Class / Patent application number | Description | Number of patent applications / Date published |
257198000 | Wide band gap emitter | 8 |
20080230809 | Semiconductor device and method of fabricating the same - A sophisticated semiconductor device capable of being fabricated without introducing a high-precision exposure apparatus is obtained. This semiconductor device includes a conductive layer formed on a first conductivity type collector layer, a first conductivity type emitter electrode formed on the conductive layer and a protruding portion protruding from an outer side toward an inner side of the emitter electrode along an interface between the emitter electrode and the conductive layer. The conductive layer has a first conductivity type emitter diffusion layer in contact with the emitter electrode through the protruding portion and a second conductivity type base layer. | 09-25-2008 |
20080237643 | TRANSISTOR - A heterojunction bipolar transistor comprising
| 10-02-2008 |
20090134429 | TRANSISTOR STRUCTURE WITH MINIMIZED PARASITICS AND METHOD OF FABRICATING THE SAME - A transistor having minimized parasitics is provided including an emitter having a recessed extrinsic emitter portion atop an intrinsic emitter portion; a base including an intrinsic base portion in electrical contact with the intrinsic emitter portion and an extrinsic base portion in electrical contact with the intrinsic base portion and electrically isolated from the recessed extrinsic emitter portion by a set of emitter/base spacers; and a collector in electrical contact with the intrinsic base portion. The transistor may further include extrinsic base having top surfaces entirely silicided to the emitter/base spacer. Additionally, the transistor may include a base window opening within the transistor's active area. Methods of forming the above-described transistor are also provided. | 05-28-2009 |
20090283802 | HETEROJUNCTION BIPOLAR TRANSISTOR DEVICE WITH ELECTROSTATIC DISCHARGE RUGGEDNESS - A heterojunction bipolar transistor (HBT) device and system having electrostatic discharge ruggedness, and methods for making the same, are disclosed. An HBT device having electrostatic discharge ruggedness may include one or more emitter fingers including an emitter layer, a transition layer formed over the emitter layer, and an emitter cap layer formed over the transition layer. | 11-19-2009 |
20140231877 | COLLECTOR-UP BIPOLAR JUNCTION TRANSISTORS IN BICMOS TECHNOLOGY - Fabrication methods, device structures, and design structures for a bipolar junction transistor. An emitter is formed in a device region defined in a substrate. An intrinsic base is formed on the emitter. A collector is formed that is separated from the emitter by the intrinsic base. The collector includes a semiconductor material having an electronic bandgap greater than an electronic bandgap of a semiconductor material of the device region. | 08-21-2014 |
20140231878 | COLLECTOR-UP BIPOLAR JUNCTION TRANSISTORS IN BICMOS TECHNOLOGY - Fabrication methods, device structures, and design structures for a bipolar junction transistor. An emitter is formed in a device region defined in a substrate. An intrinsic base is formed on the emitter. A collector is formed that is separated from the emitter by the intrinsic base. The collector includes a semiconductor material having an electronic bandgap greater than an electronic bandgap of a semiconductor material of the device region. | 08-21-2014 |
20150372098 | HETEROJUNCTION BIPOLAR TRANSISTORS FOR IMPROVED RADIO FREQUENCY (RF) PERFORMANCE - The present disclosure relates to heterojunction bipolar transistors for improved radio frequency (RF) performance. In this regard, a heterojunction bipolar transistor includes a base, an emitter, and a collector. The base is formed over the collector such that a base-collector junction is formed between the base and the collector. The base-collector junction is configured to become forward-biased at a first turn-on voltage. The emitter is formed over the base such that a base-emitter junction is formed between the base and the emitter. The base-emitter junction is configured to become forward-biased at a second turn-on voltage, as opposed to the first turn-on voltage. Notably, the second turn-on voltage is lower than the first turn-on voltage. | 12-24-2015 |
20160197168 | Semiconductor Device Comprising a Bipolar Transistor | 07-07-2016 |