Class / Patent application number | Description | Number of patent applications / Date published |
257186000 | Avalanche photodetection structure | 27 |
20080290369 | SEMICONDUCTOR LIGHT-RECEIVING DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor light-receiving device and its manufacturing method are provided which are capable of suppressing dark current and deterioration. Semiconductor crystals were sequentially grown over an n-type InP substrate, including an n-type InP buffer layer, an undoped GaInAs light absorption layer, an undoped InP diffusion buffer layer, and a p-type InP window layer. Next, a first mesa was formed by removing a part from the p-type InP window layer to the n-type InP buffer layer with a Br-based etchant having low etching selectivity, so as to form a sloped “normal” mesa structure. Next, a second mesa having a smaller diameter than the first mesa was formed by dry etching, by precisely removing a part from the p-type InP window layer to a certain mid position of the undoped InP diffusion buffer layer. | 11-27-2008 |
20080303059 | OPTICAL SEMICONDUCTOR DEVICE - An n-type InGaAs light absorbing layer and an n-type InP layer (first conductivity type semiconductor layer), which is a window layer, and a multiplication layer are multilayered one atop another on an n-type InP substrate. By selectively diffusing impurities and implanting ions, a p-type InP region second conductivity type semiconductor region) is formed on a part of the top surface of the n-type InP layer. The top surfaces of the n-type InP layer and p-type InP region are covered with a surface protection film. A cathode electrode (first electrode) is connected to the underside of the n-type InP substrate. A ring-shaped anode electrode (second electrode) is connected to the top surface of the p-type InP region. A low-voltage electrode surrounds the anode electrode. A voltage lower than that of the cathode electrode is applied to this low-voltage electrode. | 12-11-2008 |
20090026494 | Avalanche Photodiode Having Controlled Breakdown Voltage - Avalanche photodiodes and methods for forming them are disclosed. The breakdown voltage of an avalanche photodiode is controlled through the inclusion of a diffusion sink that is formed at the same time as the device region of the photodiode. The device region and diffusion sink are formed by diffusing a dopant into a semiconductor to form a p-n junction in the device region. The dopant is diffused through a first diffusion window to form the device region and a second diffusion window to form the diffusion sink. The depth of the p-n junction is based on an attribute of the second diffusion window. | 01-29-2009 |
20090050933 | SEMICONDUCTOR LIGHT-RECEIVING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed is a semiconductor light-receiving device having high reproducibility and reliability. Also disclosed is a method for manufacturing a semiconductor light-receiving device. Specifically disclosed is a semiconductor light-receiving device | 02-26-2009 |
20090050934 | MICROCHANNEL AVALANCHE PHOTODIODE (VARIANTS) - The invention—microchannel avalanche diode, belongs to semiconductor photosensitive devices, and specifically to semiconductor avalanche diodes with internal amplification of the signal. The proposed microchannel avalanche diode can be used for registration of super feeble light pulses, including up to individual photons, and also gamma quants and charged particles in devices for medical gamma tomography, radiation monitoring, and nuclear physics experiments. | 02-26-2009 |
20090218595 | SEMICONDUCTOR LIGHT RECEIVING ELEMENT - A semiconductor light detecting element comprises: a semiconductor substrate having a first major surface and a second major surface opposite each other; a first reflective layer, an absorptive layer, a phase adjusting layer, and a second reflective layer sequentially disposed, from the semiconductor substrate, on the first major surface of the semiconductor substrate; and an anti-reflection film on the second major surface of the semiconductor substrate, The first reflective layer is a multilayer reflective layer including laminated semiconductor layers having different refractive indices; the absorptive layer has a band gap energy smaller than band gap energy of the semiconductor substrate; the phase adjusting layer has a band gap energy larger than the band gap energy of the absorptive layer; and the first reflective layer contacts the absorptive layers without intervention of other layers. | 09-03-2009 |
20090242933 | Semiconductor Photodiode And Method Of Manufacture Thereof - A method of manufacture of an avalanche photodiode involving a step of making a recess in a top window layer of an avalanche photodiode layer stack, such that a wall surrounding the recess runs smoothly and gradually from the level of the recess to the level of the window layer. Further, diffusing a dopant over the entire window layer area so as to form a p-n junction at the bottom of the recess, and providing a first electrical isolation region around the recess by buried ion implantation or wet oxidation in order to limit the flow of electrical current to the p-n junction. Forming an isolation trench around the photodiode and a second electrical isolation region by ion implantation into the trench such that the second electrical isolation region runs through the absorption layer of the photodiode. | 10-01-2009 |
20090242934 | Photodiode And Method Of Fabrication - The present invention provides a highly reliable photodiode, as well as a simple method of fabricating such a photodiode. During fabrication of the photodiode, a grading layer is epitaxially grown on a top surface of an absorption layer, and a blocking layer, for inhibiting current flow, is epitaxially grown on a top surface of the grading layer. The blocking layer is then etched to expose a window region of the top surface of the grading layer. Thus, the etched blocking layer defines an active region of the absorption layer. A window layer is epitaxially regrown on a top surface of the blocking layer and on the window region of the top surface of the grading layer, and is then etched to form a window mesa. | 10-01-2009 |
20100019275 | SEMICONDUCTOR PHOTO DETECTOR - A semiconductor photo detector of the present invention includes a layer structure, having a selective etching layer of a first-type conductivity, a field-relaxing layer of the first-type conductivity, a multiplier layer, a field-relaxing layer of a second-type conductivity, a light absorption layer of the second-type conductivity, a selective etching layer of the second-type conductivity, a buffer layer of the second-type conductivity, a contact layer of the second-type conductivity, and an electrode in the side of the second-type conductivity, which are sequentially deposited over a semiconductor substrate, and having a second mesa formed on the semiconductor substrate and a first mesa formed on the second mesa, wherein the first mesa includes the buffer layer of the second-type conductivity, the contact layer of the second-type conductivity, and the electrode in the side of the second-type conductivity, wherein the second mesa includes the layer of the first-type conductivity, the multiplier layer, the light absorption layer of the second-type conductivity, and the selective etching layer of the second-type conductivity, wherein an outer periphery of the second mesa is located outside of the outer periphery of the first mesa in two-dimensional view, and wherein surfaces of the first mesa and the second mesa is covered by a passivation film. | 01-28-2010 |
20100163925 | AVALANCHE PHOTODIODE - In an electron-injection type APD, it is necessary to prevent a dark current increase and to secure the life time of the device. It is demanded to improve reliability of the APD with a lower production cost. With the InP buffer layer having an n-type doping region on the inside of a region defined by an optical absorption layer, a predetermined doping profile is achieved by ion implantation. Thus, electric field concentration in the avalanche multiplication layer is relaxed. Furthermore, a low-concentration second optical absorption layer is provided between the optical absorption layer and the avalanche multiplication layer. Responsivity of the optical absorption layer is maximized, and depletion of the lateral surface of the optical absorption layer is prevented; thus, electric field concentration is prevented. Preventing edge breakdown, the device improves its reliability. | 07-01-2010 |
20100264459 | Infrared sensor IC, and infrared sensor and manufacturing method thereof - An infrared sensor IC and an infrared sensor, which are extremely small and are not easily affected by electromagnetic noise and thermal fluctuation, and a manufacturing method thereof are provided. A compound semiconductor that has a small device resistance and a large electron mobility is used for a sensor ( | 10-21-2010 |
20100320502 | GERMANIUM/SILICON AVALANCHE PHOTODETECTOR WITH SEPARATE ABSORPTION AND MULTIPLICATION REGIONS - A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region. | 12-23-2010 |
20110140168 | AVALANCHE PHOTOTECTOR WITH INTEGRATED MICRO LENS - Provided is an avalanche photodetector with an integrated micro lens. The avalanche photodetector includes a light absorbing layer on a semiconductor substrate, an amplification layer on the light absorbing layer, a diffusion layer within the amplification layer, and the micro lens disposed corresponding to the diffusion layer. The micro lens includes a first refractive layer and a second refractive layer having a refractive index less than that of the first refractive layer. | 06-16-2011 |
20110241070 | AVALANCHE PHOTODIODE AND METHOD FOR MANUFACTURING THE AVALANCHE PHOTODIODE - An avalanche photodiode including a first electrode; and a substrate including a first semiconductor layer of a first conduction type electrically connected to the first electrode, in which at least an avalanche multiplication layer, a light absorption layer, and a second semiconductor layer of a second conduction type with a larger band gap than the light absorption layer are deposited on the substrate. The second semiconductor layer is separated into inner and outer regions by a groove formed therein, the inner region electrically connected to a second. With the configuration, the avalanche photodiode has a low dark current and high long-term reliability. In addition, the outer region includes an outer trench, and at least the light absorption layer is removed by the outer trench to form a side face of the light absorption layer. With the configuration, the dark current can be further reduced. | 10-06-2011 |
20110284926 | AVALANCHE PHOTODIODE STRUCTURE - An avalanche photodiode structure, to a method of fabricating an avalanche photodiode structure, and to devices incorporating an avalanche photodiode structure. The avalanche photodiode structure comprises a Ge doped region having a first polarity; a GaAs doped region having a second polarity opposite to the first polarity; and an undoped region between the Ge doped region and the GaAs doped region forming a heterojunction; wherein the undoped region comprises Ge and Al | 11-24-2011 |
20110284927 | Avalanche Photodiode - A single carrier avalanche photodiode ( | 11-24-2011 |
20120126286 | MONOLITHIC THREE TERMINAL PHOTODETECTOR - Photodetectors operable to achieve multiplication of photogenerated carriers at ultralow voltages. Embodiments include a first p-i-n semiconductor junction combined with a second p-i-n semiconductor junction to form a monolithic photodetector having at least three terminals. The two p-i-n structures may share either the p-type region or the n-type region as a first terminal. Regions of the two p-i-n structures doped complementary to that of the shared terminal form second and third terminals so that the first and second p-i-n structures are operable in parallel. A multiplication region of the first p-i-n structure is to multiply charge carriers photogenerated within an absorption region of the second p-i-n structure with voltage drops between the shared first terminal and each of the second and third terminals being noncumulative. | 05-24-2012 |
20130153962 | AVALANCHE PHOTO DIODE AND METHOD OF MANUFACTURING THE SAME - The inventive concept provides avalanche photo diodes and methods of manufacturing the same. The avalanche photo diode may include a substrate, a light absorption layer formed on the substrate, a clad layer formed on the light absorption layer, an active region formed in the clad layer, a guard ring region formed around the active region, and an insulating region formed between the guard ring region and the active region. | 06-20-2013 |
20130207160 | SEMICONDUCTOR LIGHT DETECTING ELEMENT - A semiconductor light detecting element includes: an InP substrate; and a semiconductor stacked structure on the InP substrate and including at least a light absorbing layer, wherein the light absorbing layer includes an InGaAsBi layer lattice-matched to the InP substrate. | 08-15-2013 |
20130292741 | High Performance GeSi Avalanche Photodiode Operating Beyond Ge Bandgap Limits - Avalanche photodiodes (APDs) having at least one top stressor layer disposed on a germanium (Ge)-containing absorption layer are described herein. The top stressor layer can increase the tensile strain of the Ge-containing absorption layer, thus extending the absorption of APDs to longer wavelengths beyond 1550 nm. In one embodiment, the top stressor layer has a four-layer structure, including an amorphous silicon (Si) layer disposed on the Ge-containing absorption layer; a first silicon dioxide (SiO | 11-07-2013 |
20140175511 | AVALANCHE PHOTODIODE - An avalanche photodiode according to the inventive concept includes a substrate, light absorption layers on the substrate, clad layers on the light absorption layers, and active regions in the clad layers. The light absorption layers, the clad layers, and the active regions constitute unit cells. Each of the unit cells has a fan-shape. | 06-26-2014 |
20140252411 | LOW VOLTAGE AVALANCHE PHOTODIODE WITH RE-ENTRANT MIRROR FOR SILICON BASED PHOTONIC INTEGRATED CIRCUITS - A low voltage APD is disposed at an end of a waveguide extending laterally within a silicon device layer of a PIC chip. The APD is disposed over an inverted re-entrant mirror co-located at the end of the waveguide to couple light by internal reflection from the waveguide to an under side of the APD. In exemplary embodiments, a 45°-55° facet is formed in the silicon device layer by crystallographic etch. In embodiments, the APD includes a silicon multiplication layer, a germanium absorption layer over the multiplication layer, and a plurality of ohmic contacts disposed over the absorption layer. An overlying optically reflective metal film interconnects the plurality of ohmic contacts and returns light transmitted around the ohmic contacts to the absorption layer for greater detector responsivity. | 09-11-2014 |
20140367740 | GERMANIUM/SILICON AVALANCHE PHOTODETECTOR WITH SEPARATE ABSORPTION AND MULTIPLICATION REGIONS - A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region. | 12-18-2014 |
20150115319 | PLANAR AVALANCHE PHOTODIODE - An avalanche photodiode includes a first semiconductor layer, a multiplication layer, a charge control layer, a second semiconductor layer, a graded absorption layer, a blocking layer and a second contact layer. The multiplication layer is located between the charge control layer and the first semiconductor layer. The charge control layer is located between the second semiconductor layer and the multiplication layer. The second semiconductor layer is located between the charge control later and the graded absorption layer. The graded absorption layer is located between the second semiconductor layer and the blocking layer. | 04-30-2015 |
20160155883 | Ge/Si Avalanche Photodiode With Integrated Heater And Fabrication Method Thereof | 06-02-2016 |
20160172525 | High-Speed Germanium On Silicon Avalanche Photodiode | 06-16-2016 |
20160254301 | SOLAR BLIND ULTRA VIOLET (UV) DETECTOR AND FABRICATION METHODS OF THE SAME | 09-01-2016 |