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Combined with other solid-state active device in integrated structure

Subclass of:

257 - Active solid-state devices (e.g., transistors, solid-state diodes)

257107000 - REGENERATIVE TYPE SWITCHING DEVICE (E.G., SCR, COMFET, THYRISTOR)

257133000 - Combined with field effect transistor

257139000 - With extended latchup current level (e.g., COMFET device)

Patent class list (only not empty are listed)

Deeper subclasses:

Class / Patent application numberDescriptionNumber of patent applications / Date published
257140000 Combined with other solid-state active device in integrated structure 89
20110180844POWER SEMICONDUCTOR DEVICES INTEGRATED WITH CLAMP DIODES HAVING SEPARATED GATE METAL PADS TO AVOID BREAKDOWN VOLTAGE DEGRADATION - A structure of power semiconductor device integrated with clamp diodes having separated gate metal pads is disclosed. The separated gate metal pads are wire bonded together on the gate lead frame. This improved structure can prevent the degradation of breakdown voltage due to electric field in termination region blocked by polysilicon or gate metal.07-28-2011
20100163922INSULATED GATE SEMICONDUCTOR DEVICE - By integrating a diode and a resistor connected in parallel into the same chip as an IGBT and connecting a cathode of the diode to a gate of the IGBT, the value of dv/dt can be limited to a predetermined range inside the chip of the IGBT without a deterioration in turn-on characteristics. Since the chip includes a resistor having such a resistance that a dv/dt breakdown of the IGBT can be prevented, the IGBT can be prevented from being broken by an increase in dv/dt at a site (user site) to which the chip is supplied.07-01-2010
20130032855Semiconductor Arrangement - A semiconductor arrangement includes a first and second controllable vertical n-channel semiconductor chip. Each of the controllable vertical n-channel semiconductor chips has a front side, a rear side opposite the front side, a front side main contact arranged on the front side, a rear side main contact arranged on the rear side, and a gate contact arranged on the front side for controlling an electric current between the front side main contact and the rear side main contact. The rear side contacts of the first and second semiconductor chips are electrically connected to one another.02-07-2013
20130075784SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device including a semiconductor substrate in which a diode region and an IGBT region are formed is provided. The diode region includes a first layer embedded in a diode trench reaching a diode drift layer from an upper surface side of the semiconductor substrate, and a second layer which is buried in the first layer and which has a lower end located deeper than a boundary between a diode body layer and the diode drift layer. The second layer pressures the first layer in a direction from inside to outside of the diode trench. A lifetime control region is formed in the diode drift layer at least at the depth of the lower end of the second layer, and a crystal defect density inside the lifetime control region is higher than a crystal defect density outside the lifetime control region.03-28-2013
20130087829SEMICONDUCTOR DEVICE - In a semiconductor device including an IGBT and a freewheeling diode (FWD), W04-11-2013
20120217542BIDIRECTIONAL SWITCH - A bidirectional switch includes a semiconductor element and a substrate potential stabilizer. The semiconductor element includes a first ohmic electrode and a second ohmic electrode, and a first gate electrode and a second gate electrode, which are sequentially formed on the first ohmic electrode between the first ohmic electrode and the second ohmic electrode. The substrate potential stabilizer sets a potential of the substrate lower than higher one of a potential of the first ohmic electrode or a potential of the second ohmic electrode.08-30-2012
20120217541IGBT WITH INTEGRATED MOSFET AND FAST SWITCHING DIODE - A power semiconductor device comprising a trench IGBT, a trench MOSFET and a fast switching diode for reduction of turn-on loss is disclosed. The inventive semiconductor power device employs a fast switching diode instead of body diode in the prior art. Furthermore, the inventive semiconductor power device further comprises an additional ESD protection diode between emitter metal and gate metal.08-30-2012
20130062661INTEGRATED CIRCUIT DEVICE - An integrated circuit device includes a semiconductor substrate and a first transistor and a second transistor constructed in the semiconductor substrate. The first transistor has a first operating voltage higher than a second operating voltage of a second transistor. The first transistor includes a first drain structure, a first source structure, an isolation structure and a first gate structure. The first source structure includes a high voltage first-polarity well region, a first-polarity body region, a heavily doped first-polarity region, a second-polarity grade region and a heavily doped second-polarity region. The heavily doped second-polarity region is surrounded by the second-polarity grade region. The second-polarity grade region is surrounded by the first-polarity body region. The second transistor includes a second drain structure, a second source structure, a second gate structure and a first-polarity drift region. The first-polarity drift region and the first-polarity body region have the same dopant concentration.03-14-2013
20130062662SEMICONDUCTOR DEVICE - In a semiconductor device, at least one of the ratio (collector contact area/collector active area) in the High Side IGBT and the ratio (contact area on p03-14-2013
20110278643SEMICONDUCTOR UNIT AND SEMICONDUCTOR APPARATUS USING SAME - A semiconductor unit of certain aspects of the invention includes electrically conductive plates in the shape of the letter L, each consisting of a horizontally disposed leg portion and a vertically disposed flat body portion that is perpendicular to a cooling plate adhered to the bottom of the semiconductor unit. A pair of the vertically disposed flat body portions sandwiches a semiconductor chip. Owing to this construction, the heat generated in the semiconductor chip can be conducted away through the both surfaces of the chip, thus improving cooling performance. Since the heat is conducted away through the leg portions of the L-shaped electrically conductive plates a projected planar area occupied by the cooling plate required for cooling the semiconductor unit is reduced. Therefore, the size of the semiconductor unit can be reduced.11-17-2011
20110284924SEMICONDUCTOR DEVICE, SEMICONDUCTOR UNIT, AND POWER SEMICONDUCTOR DEVICE - A semiconductor device includes: an insulating substrate; a first electrode pattern and a second electrode pattern provided apart from each other on a major surface of the insulating substrate; a semiconductor element connected to the first electrode pattern; an electrode terminal connected to the second electrode pattern; and a connection wiring. The connection wiring electrically connects the first electrode pattern and the second electrode pattern with each other and has a thermal resistance larger than that of the first electrode pattern.11-24-2011
20120007140ESD self protecting NLDMOS device and NLDMOS array - In an NLDMOS array, the source fingers are terminated by p+ Pbody diffusions or Pbody diffusions. The drain-source spacing is reduced by arranging p+ Pbody regions for contacting the Pbody, in line with n+ source regions to define source fingers with interdigitated p+ Pbody regions.01-12-2012
20120025264SEMICONDUCTOR DEVICE HAVING DIODE-BUILT-IN IGBT AND SEMICONDUCTOR DEVICE HAVING DIODE-BUILT-IN DMOS - A semiconductor device includes: a semiconductor substrate; a diode-built-in insulated-gate bipolar transistor having an insulated-gate bipolar transistor and a diode, which are disposed in the substrate, wherein the insulated-gate bipolar transistor includes a gate, and is driven with a driving signal input into the gate; and a feedback unit for detecting current passing through the diode. The driving signal is input from an external unit into the feedback unit. The feedback unit passes the driving signal to the gate of the insulated-gate bipolar transistor when the feedback unit detects no current through the diode, and the feedback unit stops passing the driving signal to the gate of the insulated-gate bipolar transistor when the feedback unit detects the current through the diode.02-02-2012
20110062489POWER DEVICE WITH SELF-ALIGNED SILICIDE CONTACT - An improved power device with a self-aligned suicide and a method for fabricating the device are disclosed. An example power device is a vertical power device that includes contacts formed on gate and body contact regions by an at least substantially self-aligned silicidation (e.g., salicide) process. The example device may also include one or more sidewall spacers that are each at least substantially aligned between edges of the gate region and the body contact region. The body contact region may also be implanted into the device in at least substantial self-alignment to the sidewall spacer. The method may also include an at least substantially self-aligned silicon etch.03-17-2011
20090267112SEMICONDUCTOR DEVICE AND METHOD OF FORMING A SEMICONDUCTOR DEVICE - A semiconductor device arrangement comprises a semiconductor device and an injector device. The semiconductor device comprises a first current electrode region of a first conductivity type, a second current electrode region of the first conductivity type, a drift region between the first and the second current electrode regions, and at least one floating region of a second conductivity type formed in the drift region. The injector device is arranged to receive an activation signal when the semiconductor device is turned on and to inject charge carriers of the second conductivity type into the drift region and the at least one floating region in response to receiving the activation signal.10-29-2009
20100006890ESD Protection Device with Increased Holding Voltage During Normal Operation - An ESD protection circuit including an SCR having at least one PNP transistor and at least one NPN transistor such that at least one of the PNP transistor and the NPN transistor having an additional second collector. The circuit further including at least one control circuit coupled to the at least one second collector to control holding voltage of the SCR.01-14-2010
20110062490MOS GATE POWER SEMICONDUCTOR DEVICE - A MOS-gate power semiconductor device includes: a main device area including an active area and an edge termination area; and an auxiliary device area horizontally formed outside the main device area so as to include one or more diodes. Accordingly, it is possible to protect a circuit from an overcurrent and thus to prevent deterioration and/or destruction of a device due to the overcurrent.03-17-2011
20110169047POWER SEMICONDUCTOR DEVICES INTEGRATED WITH CLAMP DIODES HAVING SEPARATED GATE METAL PADS TO AVOID BREAKDOWN VOLTAGE DEGRADATION - A structure of power semiconductor device integrated with clamp diodes having separated gate metal pad is disclosed. The separated gate metal pads are wire bonded together on the gate lead frame. This improved structure can prevent the degradation of breakdown voltage due to electric field in termination region blocked by polysilicon or gate metal.07-14-2011
20100090248Semiconductor device having IGBT and FWD on same substrate - A semiconductor device includes: a semiconductor substrate; an IGBT element including a collector region; a FWD element including a cathode region adjacent to the collector region; a base layer on the substrate; multiple trench gate structures including a gate electrode. The base layer is divided by the trench gate structures into multiple first and second regions. Each first region includes an emitter region contacting the gate electrode. Each first region together with the emitter region is electrically coupled with an emitter electrode. The first regions include collector side and cathode side first regions, and the second regions include collector side and cathode side second regions. At least a part of the cathode side second region is electrically coupled with the emitter electrode, and at least a part of the collector side second region has a floating potential.04-15-2010
20090283798Semiconductor device and manufacturing method thereof - A semiconductor device includes an n-conductive type semiconductor substrate having a main side and a rear side, a p-conductive type layer arranged over the main side of the substrate, a main side n-conductive type region arranged in the p-conductive type layer, a rear side n-conductive type layer arranged over the rear side of the substrate, a first trench which reaches the substrate and penetrates the main side n-conductive type region and the p-conductive type layer, a second trench which reaches an inside of the p-conductive type layer, a second electrode layer, which is embedded in the second trench and connected to the p-conductive type layer. Hereby, the semiconductor device, in which the recovery property of a diode cell can be improved without damaging the property of a MOS transistor cell or an IGBT cell and the surge withstand property does not deteriorate, can be obtained.11-19-2009
20110204414REVERSE-CONDUCTING SEMICONDUCTOR DEVICE - A reverse-conducting semiconductor device includes a freewheeling diode and an insulated gate bipolar transistor (IGBT) on a common wafer. Part of the wafer forms a base layer with a base layer thickness. The IGBT includes a collector side and an emitter side arranged on opposite sides of the wafer. A first layer of a first conductivity type and a second layer of a second conductivity type are alternately arranged on the collector side. The first layer includes at least one first region with a first region width and at least one first pilot region with a first pilot region width. The second layer includes at least one second region with a second region width and at least one second pilot region with a second pilot region width. Each second region width is equal to or larger than the base layer thickness, whereas each first region width is smaller than the base layer thickness. Each second pilot region width is larger than each first pilot region width. Each first pilot region width is equal to or larger than two times the base layer thickness, and the sum of the areas of the second pilot regions is larger than the sum of the areas of the first pilot regions.08-25-2011
20130214328POWER SEMICONDUCTOR APPARATUS - A power semiconductor apparatus which is provided with a first power semiconductor device using Si as a base substance and a second power semiconductor device using a semiconductor having an energy bandgap wider than the energy bandgap of Si as a base substance, and includes a first insulated metal substrate on which the first power semiconductor device is mounted, a first heat dissipation metal base on which the first insulated metal substrate is mounted, a second insulated metal substrate on which the second power semiconductor device is mounted, and a second heat dissipation metal base on which the second insulated metal substrate is mounted.08-22-2013
20110220963METHOD AND APPARATUS OF FORMING BIPOLAR TRANSISTOR DEVICE - The present disclosure provides a semiconductor device having a transistor. The transistor includes a substrate. The transistor includes a collector region that is formed in a portion of the substrate. The transistor includes a base region that is surrounded by the collector region. The transistor includes an emitter region that is surrounded by the based region. The transistor includes an isolation structure that is disposed adjacent the emitter region. The transistor includes a gate structure that is disposed over a portion of the emitter region and a portion of the isolation structure.09-15-2011
20120193676Diode structures with controlled injection efficiency for fast switching - This invention discloses a semiconductor device disposed in a semiconductor substrate. The semiconductor device includes a first semiconductor layer of a first conductivity type on a first major surface. The semiconductor device further includes a second semiconductor layer of a second conductivity type on a second major surface opposite the first major surface. The semiconductor device further includes an injection efficiency controlling buffer layer of a first conductivity type disposed immediately below the second semiconductor layer to control the injection efficiency of the second semiconductor layer.08-02-2012
20100187567Semiconductor device - A semiconductor device includes a semiconductor substrate having a first surface and a second surface. A main region and a sensing region are formed on the first surface side of the semiconductor substrate. A RC-IGBT is formed in the main region and a sensing element for passing electric currents proportional to electric currents flowing through the RC-IGBT is formed in the sensing region. A collector region and a cathode region of the sensing element are formed on the second surface side of the semiconductor substrate. The collector region is located directly below the sensing region in a thickness direction of the semiconductor substrate. The cathode region is not located directly below the sensing region in the thickness direction.07-29-2010
20100224908SEMICONDUCTOR DEVICE - A semiconductor device according to the present invention includes a substrate; a nitride semiconductor layer formed above the substrate and having a laminated structure including at least three layers; a heterojunction bipolar transistor formed in a region of the nitride semiconductor layer; and a field-effect transistor formed in a region of the nitride semiconductor layer, the region being different from the region in which the heterojunction bipolar transistor is formed.09-09-2010
20100213506COMPONENT ARRANGEMENT INCLUDING A MOS TRANSISTOR HAVING A FIELD ELECTRODE - A component arrangement including a MOS transistor having a field electrode is disclosed. One embodiment includes a gate electrode, a drift zone and a field electrode, arranged adjacent to the drift zone and dielectrically insulated from the drift zone by a dielectric layer a charging circuit, having a rectifier element connected between the gate electrode and the field electrode.08-26-2010
20100224909SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A first well region of a second conductivity type is formed in the portion of the semiconductor layer of the first conductivity type located in an element portion in which a vertical element is disposed, while a second well region of the second conductivity type is formed in the portion of the semiconductor layer located in a peripheral portion surrounding the element portion. A field insulating film is formed on the portion of the semiconductor layer located in a field portion interposed between the element portion and the peripheral portion. A depletion stop region of the first conductivity type having an impurity concentration higher than that of the semiconductor layer is formed in a surface portion of the semiconductor layer located under at least the portion of the field insulating film adjacent to the peripheral portion.09-09-2010
20100140658Method of manufacturing semiconductor device including insulated gate bipolar transistor and diode - In a method of manufacturing a semiconductor device, a semiconductor substrate of a first conductivity type having first and second surfaces is prepared. Second conductivity type impurities for forming a collector layer are implanted to the second surface using a mask that has an opening at a portion where the collector layer will be formed. An oxide layer is formed by enhanced-oxidizing the collector layer. First conductivity type impurities for forming a first conductivity type layer are implanted to the second surface using the oxide layer as a mask. A support base is attached to the second surface and a thickness of the semiconductor substrate is reduced from the first surface. An element part including a base region, an emitter region, a plurality of trenches, a gate insulating layer, a gate electrode, and a first electrode is formed on the first surface of the semiconductor substrate.06-10-2010
20090321784Semiconductor Device and Method of Forming Lateral Power MOSFET with Integrated Schottky Diode on Monolithic Substrate - A monolithic semiconductor device has an insulating layer formed over a first substrate. A second substrate is disposed over the first insulating layer. A power MOSFET with body diode is formed over the second substrate. A Schottky diode is formed over the second substrate in proximity to the MOSFET. An insulation trench is formed within the second substrate between the MOSFET and Schottky diode. The isolation trench surrounds the MOSFET and first Schottky diode. A first electrical connection is formed between a source of the MOSFET and an anode of the Schottky diode. A second electrical connection is formed between a drain of the MOSFET and a cathode of the Schottky diode. The Schottky diode reduces charge build-up within the body diode and reverse recovery time of the first power MOSFET. The power MOSFET and integrated Schottky can be used in power conversion or audio amplifier circuit.12-31-2009
20090114947Semiconductor device and inverter circiut having the same - A semiconductor device includes a semiconductor substrate, an insulated gate transistor formed to the semiconductor substrate, a diode formed to the semiconductor substrate, and a control transistor formed to the semiconductor substrate. A first current terminal of the insulated gate transistor is coupled to a cathode of the diode at a high potential side. A second current terminal of the insulated gate transistor is coupled to an anode of the diode at a low potential side. The control transistor is configured to turn off the insulated gate transistor by reducing a potential of a gate terminal of the insulated gate transistor when the diode conducts an electric current.05-07-2009
20110042716ESD protection device structure - An ESD protection device structure includes a well having a first conductive type, a first doped region having a second conductive type disposed in the well, a second doped region having the first conductive type, and a third doped region having the second conductive type disposed in the well. The second doped region is disposed within the first doped region so as to form a vertical BJT, and the first doped region, the well and the third doped region forms a lateral BJT, so that pulse voltage that the ESD protection structure can tolerate can be raised.02-24-2011
20100301387SEMICONDUCTOR DEVICE AND METHOD FOR ITS PRODUCTION - A semiconductor system is described, which is made up of a highly n-doped silicon substrate and a first n-silicon epitaxial layer, which is directly contiguous to the highly n-doped silicon substrate, and having a p-doped SiGe layer, which is contiguous to a second n-doped silicon epitaxial layer and forms a heterojunction diode, which is situated above the first n-doped silicon epitaxial layer and in which the pn-junction is situated within the p-doped SiGe layer. The first n-silicon epitaxial layer has a higher doping concentration than the second n-silicon epitaxial layer. Situated between the two n-doped epitaxial layers is at least one p-doped emitter trough, which forms a buried emitter, a pn-junction both to the first n-doped silicon epitaxial layer and also to the second n-doped silicon epitaxial layer being formed, and the at least one emitter trough being completely enclosed by the two epitaxial layers.12-02-2010
20100301386INTEGRATED STRUCTURE OF IGBT AND DIODE AND METHOD OF FORMING THE SAME - An integrated structure of an IGBT and a diode includes a plurality of doped cathode regions, and a method of forming the same is provided. The doped cathode regions are stacked in a semiconductor substrate, overlapping and contacting with each other. As compared with other doped cathode regions, the higher a doped cathode region is disposed, the larger implantation area the doped cathode region has. The doped cathode regions and the semiconductor substrate have different conductive types, and are applied as a cathode of the diode and a collector of the IGBT. The stacked doped cathode regions can increase the thinness of the cathode, and prevent the wafer from being overly thinned and broken.12-02-2010
20110042717INTEGRATED LOW LEAKAGE DIODE - An integrated low leakage diode suitable for operation in a power integrated circuit has a structure similar to a lateral power MOSFET, but with the current flowing through the diode in the opposite direction to a conventional power MOSFET. The anode is connected to the gate and the comparable MOSFET source region which has highly doped regions of both conductivity types connected to the channel region to thereby create a lateral bipolar transistor having its base in the channel region. A second lateral bipolar transistor is formed in the cathode region. As a result, substantially all of the diode current flows at the upper surface of the diode thereby minimizing the substrate leakage current. A deep highly doped region in contact with the layers forming the emitter and the base of the vertical parasitic bipolar transistor inhibits the ability of the vertical parasitic transistor to fully turn on.02-24-2011
20100163923SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device may include a semiconductor substrate having a first deep N well and/or a second deep N well, a first isolation layer over a first deep N well, and/or a first P well over a first deep N well. A semiconductor device may include an NMOS transistor over a first P well and/or a PMOS transistor over a first deep N well at an opposite side of a first isolation layer. A semiconductor device may include a second P well over a second deep N well, a second isolation layer interposed between a second deep N well and a second P well, and/or an emitter including first type impurities over a second deep N well. A semiconductor device may include a third isolation layer over a second P well, a collector including first type impurities over a second P well, and/or a base formed over a second P well and/or having a bottom surface to make contact with an emitter.07-01-2010
20110254051SEMICONDUCTOR DEVICE - A semiconductor device includes an n-conductive type semiconductor substrate having a main side and a rear side, a p-conductive type layer arranged over the main side of the substrate, a main side n-conductive type region arranged in the p-conductive type layer, a rear side n-conductive type layer arranged over the rear side of the substrate, a first trench which reaches the substrate and penetrates the main side n-conductive type region and the p-conductive type layer, a second trench which reaches an inside of the p-conductive type layer, a second electrode layer, which is embedded in the second trench and connected to the p-conductive type layer. Hereby, the semiconductor device, in which the recovery property of a diode cell can be improved without damaging the property of a MOS transistor cell or an IGBT cell and the surge withstand property does not deteriorate, can be obtained.10-20-2011
20090001411Semiconductor device - A semiconductor device includes a spaced-channel IGBT and an antiparalell diode that are formed in a same semiconductor substrate. The IGBT includes a base layer and insulated gate trenches by which the base layer is divided into a body region connected to an emitter and a floating region disconnected from the emitter. The IGBT is formed in a cell region of an IGBT region, and the diode is formed in a diode region. A boundary region of the IGBT region is located between the cell region and the diode region. A spacing between adjacent gate trenches in the boundary region is less than a spacing between adjacent gate trenches between which the floating region is located in the cell region.01-01-2009
20080251811SEMICONDUCTOR DEVICE10-16-2008
20130168731SEMICONDUCTOR POWER DEVICE HAVING WIDE TERMINATION TRENCH AND SELF-ALIGNED SOURCE REGIONS FOR MASK SAVING - A trench semiconductor power device with a termination area structure is disclosed. The termination area structure comprises a wide trench and a trenched field plate formed not only along trench sidewall but also on trench bottom of the wide trench by doing poly-silicon CMP so that the body ion implantation is blocked by the trenched field plate on the trench bottom to prevent the termination area underneath the wide trench from being implanted. Moreover, a contact mask is used to define both trenched contacts and source regions of the device for saving a source mask.07-04-2013
20110254050REVERSE CONDUCTING IGBT - An insulated gate bipolar transistor (IGBT) is provided comprising a semiconductor substrate having the following regions in sequence: (i) a first region of a first conductive type having opposing surfaces, a column region of a second conductive type within the first region extending from a first of said opposing surfaces; (ii) a drift region of the second conductive type; (iii) a second region of the first conductive type, and (iv) a third region of the second conductive type. There is provided a gate electrode disposed to form a channel between the third region and the drift region, a first electrode operatively connected to the second region and the third region, a second electrode operatively connected to the first region and the column region. The arrangement of the IGBT is such that the column region is spaced from a second surface of the opposing surfaces of the first region, whereby a forward conduction path extends sequentially through the third region, the second region, the drift region, and the first region, and whereby a reverse conduction path extends sequentially through the second region, the drift region, the first region and the column region. Reverse conduction of the IGBT occurs through a thyristor structure which is embedded in the IGBT. Such an IGBT structure is advantageous over a reverse conducting IGBT structure in which an anti-parallel diode is integrated or embedded because it provides improved reverse conduction and snapback performance.10-20-2011
20110133246INTERNAL COMBUSTION ENGINE IGNITER SEMICONDUCTOR DEVICE - An internal combustion engine igniter semiconductor device is disclosed which is low cost yet secures energy withstand and reverse surge withstand capability. An IGBT includes a clamping diode between a collector electrode and a gate electrode. The IGBT has two n-type buffer layers of differing impurity concentrations between a p06-09-2011
20110073905SEMICONDUCTOR DEVICE AND POWER CONVERTER USING IT - A semiconductor device and a power converter using it wherein a switching power device and a flywheel diode are connected in series, the flywheel diode includes a region having a Schottky junction to operate as a Schottky diode and a region having a pn junction to operate as a pn diode and control operation is performed such that when current flows forwardly through the flywheel diode, the pn diode operates and when the flywheel diode recovers backwardly, the Schottky diode operates mainly.03-31-2011
20100078675CIRCUIT DEVICE - Provided is a circuit device having a configuration in which thermal interference between built-in elements is suppressed and being miniaturized in total size. A hybrid integrated circuit device of the present invention includes: a circuit substrate, a sealing resin and leads. The circuit substrate in its upper surface is incorporated with a hybrid integrated circuit formed of semiconductor elements and the like respectively fixed to heat spreaders. The sealing resin coats the circuit substrate and thus seals the hybrid integrated circuit. The leads each extend to the outside while being fixed to a pad formed of a conductive pattern. In this hybrid integrated circuit device, the semiconductor elements are mounted on the respective heat spreaders at positions offset from each other, and thereby are arranged to be spaced away from each other.04-01-2010
20090173966INTEGRATED LOW LEAKAGE DIODE - An integrated low leakage diode suitable for operation in a power integrated circuit has a structure similar to a lateral power MOSFET, but with the current flowing through the diode in the opposite direction to a conventional power MOSFET. The anode is connected to the gate and the comparable MOSFET source region which has highly doped regions of both conductivity types connected to the channel region to thereby create a lateral bipolar transistor having its base in the channel region. A second lateral bipolar transistor is formed in the cathode region. As a result, substantially all of the diode current flows at the upper surface of the diode thereby minimizing the substrate leakage current. A deep highly doped region in contact with the layers forming the emitter and the base of the vertical parasitic bipolar transistor inhibits the ability of the vertical parasitic transistor to fully turn on.07-09-2009
20120305985POWER SEMICONDUCTOR DEVICE COMPRISING A PLURALITY OF TRENCH IGBTS - A power semiconductor device with improved avalanche capability structures is disclosed. By forming at least an avalanche capability enhancement doped regions with opposite conductivity type to epitaxial layer underneath an ohmic contact doped region which surrounds at least bottom of trenched contact filled with metal plug between two adjacent gate trenches, avalanche current is enhanced with the disclosed structures.12-06-2012
20120043582SEMICONDUCTOR DEVICE HAVING BOTH IGBT AREA AND DIODE AREA - There is known a semiconductor device in which an IGBT structure is provided in an IGBT area and a diode structure is provided in a diode area, the IGBT area and the diode area are both located within a same substrate, and the IGBT area is adjacent to the diode area. In this type of semiconductor device, a phenomenon that carriers accumulated within the IGBT area flow into the diode area when the IGBT structure is turned off. In order to prevent this phenomenon, a region of shortening lifetime of carriers is provided at least in a sub-area that is within said IGBT area and adjacent to said diode area. In the sub-area, emitter of IGBT structure is omitted.02-23-2012
20120043581SEMICONDUCTOR DEVICE - In a semiconductor device, an IGBT cell includes a trench passing through a base layer of a semiconductor substrate to a drift layer of the semiconductor substrate, a gate insulating film on an inner surface of the trench, a gate electrode on the gate insulating film, a first conductivity-type emitter region in a surface portion of the base layer, and a second conductivity-type first contact region in the surface portion of the base layer. The IGBT cell further includes a first conductivity-type floating layer disposed within the base layer to separate the base layer into a first portion including the emitter region and the first contact region and a second portion adjacent to the drift layer, and an interlayer insulating film disposed to cover an end of the gate electrode. A diode cell includes a second conductivity-type second contact region in the surface portion of the base layer.02-23-2012
20120001227Power semiconductor module - A power semiconductor module includes a plurality of sets of semiconductor switching elements, a molded resin casing containing the semiconductor switching elements, screw holders for receiving mounting screws formed at bottom regions of four corners of the molded resin casing, first terminal blocks having main circuit terminals, and arranged on a central region of a top surface of the molded resin casing, and second terminal blocks having control terminals arranged at a side edge of the molded resin casing apart. Insulating separation walls having a configuration of a rib erect from a surface of the second terminal blocks, and are interposed between groups of the control terminals corresponding to the sets of semiconductor switching elements, and between the screw holder including the mounting screw therein on the molded resin casing and the control terminal at a high voltage side adjacent to the screw holder.01-05-2012
20120056242SEMICONDUCTOR DEVICE INCLUDING INSULATED GATE BIPOLAR TRANSISTOR AND DIODE - A semiconductor device includes a vertical IGBT and a vertical free-wheeling diode in a semiconductor substrate. A plurality of base regions is disposed at a first-surface side portion of the semiconductor substrate, and a plurality of collector regions and a plurality of cathode regions are alternately disposed in a second-surface side portion of the semiconductor substrate. The base regions include a plurality of regions where channels are provided when the vertical IGBT is in an operating state. The first-side portion of the semiconductor substrate include a plurality of IGBT regions each located between adjacent two of the channels, including one of the base regions electrically coupled with an emitter electrode, and being opposed to one of the cathode regions. The IGBT regions include a plurality of narrow regions and a plurality of wide regions.03-08-2012
20120007141SEMICONDUCTOR DEVICE HAVING SEMICONDUCTOR SUBSTRATE INCLUDING DIODE REGION AND IGBT REGION - A semiconductor device, including a semiconductor substrate in which a diode region and an IGBT region are formed, is provided. A lifetime control region is formed within a diode drift region. The diode drift region and the IGBT drift region are a continuous region across a boundary region between the diode region and the IGBT region. A first separation region and a second separation region are formed within the boundary region. The first separation region is formed of a p-type semiconductor, formed in a range extending from an upper surface of the semiconductor substrate to a position deeper than both of a lower end of an anode region and a lower end of a body region, and bordering with the anode region. The second separation region is formed of a p-type semiconductor, formed in a range extending from the upper surface of the semiconductor substrate to a position deeper than both of the lower end of the anode region and the lower end of the body region, and bordering with the body region. The second separation region is separated from the first separation region.01-12-2012
20120205714APPARATUS AND METHOD FOR PROTECTION OF ELECTRONIC CIRCUITS OPERATING UNDER HIGH STRESS CONDITIONS - Apparatus and methods for electronic circuit protection under high stress operating conditions are provided. In one embodiment, an apparatus includes a substrate having a first p-well, a second p-well adjacent the first p-well, and an n-type region separating the first and second p-wells. An n-type active area is over the first p-well and a p-type active area is over the second p-well. The n-type and p-type active areas are electrically connected to a cathode and anode of a high reverse blocking voltage (HRBV) device, respectively. The n-type active area, the first p-well and the n-type region operate as an NPN bipolar transistor and the second p-well, the n-type region, and the first p-well operate as a PNP bipolar transistor. The NPN bipolar transistor defines a relatively low forward trigger voltage of the HRBV device and the PNP bipolar transistor defines a relatively high reverse breakdown voltage of the HRBV device.08-16-2012
20110049563MOS GATE POWER SEMICONDUCTOR DEVICE - A MOS-gate power semiconductor device is provided which includes: one or more P-type wells formed under one or more of a gate metal electrode and a gate bus line and electrically connected to an emitter metal electrode; and one or more N-type wells formed in the P-type well and electrically connected to one or more of the gate metal electrode and the gate bus line. According to this configuration, it is possible to suppress deterioration and/or destruction of a device due to an overcurrent.03-03-2011
20120153349SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is a semiconductor device including: a first gate wiring line connected to a gate electrode through an upper surface of the gate electrode that is not covered with a first interlayer insulating film; a second interlayer insulating film formed on the first interlayer insulating film so as to cover a region other than part of an upper surface of the first gate wiring line; and a second gate wiring line connected to the first gate wiring line through the upper surface of the first gate wiring line that is not covered with the second interlayer insulating film, the second gate wiring line having a width larger than a width of the first gate wiring line in plan view.06-21-2012
20120119256POWER SEMICONDUCTOR MODULE - In a semiconductor module according to certain aspects the invention, a U-terminal and an M-terminal overlap each other in a manner to reduce inductance and to further to reduce the size of snubber capacitor. In certain aspects of the invention, a P-terminal, M-terminal, N-terminal, and U-terminal are arranged such that the U-terminal, through which currents flow in and out, is arranged farthest away from control electrodes to reduce the noises superposed to control electrodes, and the P-terminal, M-terminal, N-terminal, and U-terminal are aligned to facilitate attaching external connection bars thereto. A power semiconductor module according to aspects of the invention can facilitate reducing the wiring inductance inside and outside the module, reducing the electromagnetic noises introduced into the control terminals, and attaching the external wirings to the terminals thereof simply and easily.05-17-2012
20100289059Power semiconductor devices integrated with clamp diodes having separated gate metal pads to avoid breakdown voltage degradation - A structure of power semiconductor device integrated with clamp diodes having separated gate metal pad is disclosed. The separated gate metal pads are wire bonded together on the gate lead frame. This improved structure can prevent the degradation of breakdown voltage due to electric field in termination region blocked by polysilicon.11-18-2010
20120161201FAST SWITCHING LATERAL INSULATED GATE BIPOLAR TRANSISTOR (LIGBT) WITH TRENCHED CONTACTS - A lateral insulated gate bipolar transistor (LIGBT) includes a drain-anode adjoining trenched contact penetrating through an insulating layer and extending into an epitaxial layer, directly contacting to a drain region and an anode region, and the drain region vertically contacting to the anode region along sidewall of the drain-anode adjoining trenched contact. The LIGBT further comprises a breakdown voltage enhancement doping region wrapping around the anode region. The LIGBTs in accordance with the invention offer the advantages of high breakdown voltage and low on-resistance as well as high switching speed.06-28-2012
20120132954SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor substrate with a first surface and a second surface. The semiconductor substrate has an element region including an IGBT region and a diode region located adjacent to the IGBT region. An IGBT element is formed in the IGBT region. A diode element is formed in the diode region. A heavily doped region of first conductivity type is located on the first surface side around the element region. An absorption region of first conductivity type is located on the second surface side around the element region. A third semiconductor region of second conductivity type is located on the second surface side around the element region.05-31-2012
20120132956SEMICONDUCTOR COMPONENT WITH HIGH BREAKTHROUGH TENSION AND LOW FORWARD RESISTANCE - A semiconductor component having a semiconductor body is disclosed. In one embodiment, the semiconductor component includes a drift zone of a first conductivity type, a drift control zone composed of a semiconductor material which is arranged adjacent to the drift zone at least in places, a dielectric which is arranged between the drift zone and the drift control zone at least in places. A quotient of the net dopant charge of the drift control zone, in an area adjacent to the accumulation dielectric and the drift zone, divided by the area of the dielectric arranged between the drift control zone and the drift zone is less than the breakdown charge of the semiconductor material in the drift control zone.05-31-2012
20120132955SEMICONDUCTOR DEVICE - A diode region and an IGBT region are formed in a semiconductor layer of a semiconductor device. A lifetime controlled region is formed in the semiconductor layer. In a plan view, the lifetime controlled region has a first lifetime controlled region located in the diode region and a second lifetime controlled region located in a part of the IGBT region. The second lifetime controlled region extends from a boundary of the diode region and the IGBT region toward the IGBT region. In the plan view, a tip of the second lifetime controlled region is located in a forming area of the body region in the IGBT region.05-31-2012
20120248499SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor substrate including a semiconductor layer, a power device formed in the semiconductor substrate, a plurality of concentric guard rings formed in the semiconductor substrate and surrounding the power device, and voltage applying means for applying successively higher voltages respectively to the plurality of concentric guard rings, with the outermost concentric guard ring having the highest voltage applied thereto.10-04-2012
20120175673SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF - A semiconductor device includes an output port that has a first lateral double diffused metal oxide semiconductor (LDMOS) device and an electrostatic discharge protection device that has a second LDMOS device and a bipolar transistor and that protects the output port from electrostatic discharge. A breakdown voltage of the second LDMOS device is equal to or lower than a breakdown voltage of the first LDMOS device.07-12-2012
20100270587REVERSE-CONDUCTING SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SUCH A REVERSE-CONDUCTING SEMICONDUCTOR DEVICE - A reverse-conducting semiconductor device (RC-IGBT) including a freewheeling diode and an insulated gate bipolar transistor (IGBT), and a method for making the RC-IGBT are provided. A wafer has first and second sides emitter and collector sides of the IGBT, respectively. At least one layer of a first or second conductivity type is created on the second side before at least one layer of a different conductivity type is created on the second side. The at least one layer of the first or second conductivity type and the at least one layer of the different conductivity type are arranged alternately in the finalized RC-IGBT. A second electrical contact, which is in direct electrical contact with the layers of the first or second and different conductivity types, is created on the second side. A shadow mask is applied on the second side, and the layer of the first or second conductivity type is created through the shadow mask. Another layer of the first or second conductivity type can be created on the second side, and a shadow mask is applied on the other layer of the first or second conductivity type, and at least one electrically conductive island, which is part of a second electrical contact in the finalized RC-IGBT, is created through the shadow mask. The electrically conductive island is used as a mask for the creation of the layer of the different conductivity type, and those parts of the other layer of the first conductivity type which are covered by an electrically conductive island form the layer of the first or second conductivity type.10-28-2010
20100270586WIDE BAND GAP SEMICONDUCTOR DEVICE - A semiconductor device having high reliability and high load short circuit withstand capability while maintaining a low ON resistance is provided, by using a WBG semiconductor as a switching element of an inverter circuit. In the semiconductor device for application to a switching element of an inverter circuit, a band gap of a semiconductor material is wider than that of silicon, a circuit that limits a current when a main transistor is short circuited is provided, and the main transistor that mainly serves to pass a current, a sensing transistor that is connected in parallel to the main transistor and detects a microcurrent proportional to a current flowing in the main transistor, and a lateral MOSFET that controls a gate of the main transistor on the basis of an output of the sensing transistor are formed on the same semiconductor.10-28-2010
20100244092POWER SEMICONDUCTOR APPARATUS - A power semiconductor apparatus which is provided with a first power semiconductor device using Si as a base substance and a second power semiconductor device using a semiconductor having an energy bandgap wider than the energy bandgap of Si as a base substance, and includes a first insulated metal substrate on which the first power semiconductor device is mounted, a first heat dissipation metal base on which the first insulated metal substrate is mounted, a second insulated metal substrate on which the second power semiconductor device is mounted, and a second heat dissipation metal base on which the second insulated metal substrate is mounted.09-30-2010
20120313141FAST SWITCHING HYBRID IGBT DEVICE WITH TRENCHED CONTACTS - A hybrid IGBT device having a VIGBT and LDMOS structures comprises at least a drain trenched contact filled with a conductive plug penetrating through an epitaxial layer, and extending into a substrate; a vertical drain region surrounding at least sidewalls of the drain trenched contact, extending from top surface of the epitaxial layer to the substrate, wherein the vertical drain region having a higher doping concentration than the epitaxial layer.12-13-2012
20110037096Heterojunction Bipolar Transistors and Methods of Manufacture - Semiconductor structures and methods of manufacture semiconductors are provided which relate to heterojunction bipolar transistors. The method includes forming two devices connected by metal wires on a same wiring level. The metal wire of a first of the two devices is formed by selectively forming a metal cap layer on copper wiring structures.02-17-2011
20120267682SEMICONDUCTOR DEVICE - A semiconductor device in which the wiring resistance and parasitic inductance of a semiconductor package configuring a power semiconductor module is reduced. In the semiconductor device, a semiconductor chip with an IGBT formed therein and a diode chip are mounted over the upper surface of a die pad. An emitter pad of the semiconductor chip and an anode pad of the diode chip are coupled with a lead by an Al wire. One end of the lead is located in a higher position than the upper surface of the die pad in order to shorten the length of the Al wire for coupling the emitter pad and the lead.10-25-2012
20120319163SEMICONDUCTOR DEVICE INCLUDING INSULATED GATE BIPOLAR TRANSISTOR AND DIODE - A semiconductor device includes an IGBT forming region and a diode forming region. The IGBT forming region includes an IGBT operating section that operates as an IGBT and a thinned-out section that does not operate as an IGBT. The IGBT operating section includes a channel region, and the thinned-out section includes a first anode region. The diode forming region includes a second anode region. When an area density is defined as a value calculated by integrating a concentration profile of second conductivity type impurities in each of the channel region, the first anode region, and the second anode region in a depth direction, an area density of the channel region is higher than an area density of the first anode region and an area density of the second anode region.12-20-2012
20110241069Low side zener reference voltage extended drain SCR clamps - In an ultra high voltage lateral DMOS-type device (UHV LDMOS device), a central pad that defines the drain region is surrounded by a racetrack-shaped source region with striations of alternating n-type and p-type material radiating outwardly from the pad to the source to provide for an adjustable snapback voltage.10-06-2011
20100230717SEMICONDUCTOR DEVICE - A semiconductor device includes: a first semiconductor layer of non-doped Al09-16-2010
20120091503HIGH-VOLTAGE ESD PROTECTION DEVICE - The present invention discloses a high-voltage ESD protection device including a silicon controlled rectifier and a first PNP transistor. The silicon controlled rectifier includes a high-voltage P-well and N-well; a first N+ and P+ diffusion region are formed in the high-voltage P-well; a second N+ and P+ diffusion region are formed in the high-voltage N-well. The first PNP transistor comprises an N-type buried layer; a low-voltage N-well formed in the N-type buried layer; and a base, emitter and collector formed in the low-voltage N-well. The base and emitter are shorted together; the collector is shorted to the second N+ diffusion region and the second P+ diffusion region; the first N+ diffusion region is shorted to the first P+ diffusion region to act as a ground terminal. The high-voltage ESD protection device can effectively adjust the ESD trigger voltage and improve the snapback sustaining voltage after the device is switched on.04-19-2012
20120286325APPARATUS FOR ELECTROSTATIC DISCHARGE PROTECTION - An apparatus includes an electrostatic discharge (ESD) protection device. In one embodiment, the protection device electrically coupled between a first node and a second node of an internal circuit to be protected from transient electrical events. The protection device includes a bipolar device or a silicon-controlled rectifier (SCR). The bipolar device or SCR can have a modified structure or additional circuitry to have a selected holding voltage and/or trigger voltage to provide protection over the internal circuit. The additional circuitry can include one or more resistors, one or more diodes, and/or a timer circuit to adjust the trigger and/or holding voltages of the bipolar device or SCR to a desired level. The protection device can provide protection over a transient voltage that ranges, for example, from about 100 V to 330V.11-15-2012
20130009205SEMICONDUCTOR DEVICE - A semiconductor device has a first conductivity-type semiconductor substrate, second conductivity-type channel regions, and second conductivity-type thinning-out regions. The channel regions and the thinning-out regions are formed adjacent to a substrate surface of the semiconductor substrate. Further, a hole stopper layer is formed in each of the thinning-out regions to divide the thinning-out region into a first part adjacent to the substrate surface and a second part adjacent to a bottom of the thinning-out region. The hole stopper layer has an area density of equal to or less than 4.0×1001-10-2013
20130009206SEMICONDUCTOR DEVICE - In a semiconductor device in which a diode and an IGBT are formed in a main region of a same semiconductor substrate, in order to obtain a sufficiently large sense IGBT current in a stable manner, a sense region is provided with a first region in which a distance from an end of a main cathode region on a side of the sense region in a plan view of the semiconductor substrate is equal to or longer than 615 μm. Alternatively, in order to obtain a sufficiently large sense diode current in a stable manner, the sense region is provided with a second region in which a distance from the main cathode region in a plan view of the semiconductor substrate is equal to or shorter than 298 μm. The sense region may be provided with both the first region and the second region.01-10-2013
20130015495Stacked Half-Bridge Power Module - According to an exemplary embodiment, a stacked half-bridge power module includes a high side device having a high side power terminal coupled to a high side substrate and a low side device having a low side power terminal coupled to a low side substrate. The high side and low side devices are stacked on opposite sides of a common conductive interface. The common conductive interface electrically, mechanically, and thermally couples a high side output terminal of the high side device to a low side output terminal of the low side device. The high side device and the low side device can each include an insulated-gate bipolar transistor (IGBT) in parallel with a diode.01-17-2013
20130015496Power Semiconductor DeviceAANM Konno; AkitoyoAACI HitachiAACO JPAAGP Konno; Akitoyo Hitachi JPAANM Azuma; KatsunoriAACI HitachiAACO JPAAGP Azuma; Katsunori Hitachi JPAANM Ando; TakashiAACI HitachiAACO JPAAGP Ando; Takashi Hitachi JP - A power semiconductor device is provided in which reliability can be improved when the parallel number of semiconductor devices increases. When a bonding face on collector electrode is on an upper side, and a bonding face on emitter electrode is on a lower side, a collector electrode joint region as a joint region between a collector trace and a collector electrode on a chip mounted substrate and an emitter electrode joint region as a joint region between an emitter trace and an emitter electrode are located at a same position in an up-and-down direction and are adjacent in a right-and-left direction at an interval of 2 mm or more and 4 mm or less.01-17-2013
20130181254SEMICONDUCTOR DEVICE - In a semiconductor device having a semiconductor substrate on which a diode and an IGBT are formed, a cathode region of the diode and a collector region of the IGBT are formed in a range exposed to one surface of the semiconductor substrate. On the surface, a first conductor layer that is in contact with the cathode region, and a second conductor layer that is in contact with the collector region are formed. The work function of the second conductor layer is larger than the work function of the first conductor layer.07-18-2013
20130099279POWER SEMICONDUCTOR DEVICE - An exemplary power semiconductor device with a wafer having an emitter electrode on an emitter side and a collector electrode on a collector side, an (n-) doped drift layer, an n-doped first region, a p-doped base layer, an n-doped source region, and a gate electrode, all of which being formed between the emitter and collector electrodes. The emitter electrode contacts the base layer and the source region within a contact area. An active semiconductor cell is formed within the wafer, and includes layers that lie in orthogonal projection with respect to the emitter side of the contact area of the emitter electrode. The device also includes a p-doped well, which is arranged in the same plane as the base layer, but outside the active cell. The well is electrically connected to the emitter electrode at least one of directly or via the base layer.04-25-2013
20130175575EFFICIENT IGBT SWITCHING - Embodiments of the invention provide IGBT circuit modules with increased efficiencies. These efficiencies can be realized in a number of ways. In some embodiments, the gate resistance and/or voltage can be minimized. In some embodiments, the IGBT circuit module can be switched using an isolated receiver such as a fiber optic receiver. In some embodiments, a single driver can drive a single IGBT. And in some embodiments, a current bypass circuit can be included. Various other embodiments of the invention are disclosed.07-11-2013
20130146941SEMICONDUCTOR DEVICE - A semiconductor device includes a transistor having a gate electrode, a first electrode, and a second electrode and first and second protection circuits each having one end commonly connected to the gate electrode and the other end connected to the first and second electrodes, respectively. The first and second protection circuits are formed in first and second polysilicon layers, respectively, formed separately on a single field insulating film.06-13-2013
20110233608CONNECTION ARRANGEMENT FOR SEMICONDUCTOR POWER MODULES - A semiconductor power module includes at least two sub modules. The sub modules include at least one respective transistor having a collector, an emitter, and a gate. The module includes a connection arrangement having a collector terminal unit for connecting the collectors of the at least two sub modules collectively to external circuit components, at least two emitter terminal units for connecting the respective emitters of the at least two sub modules individually to external circuit components, and at least two gate terminal units for connecting the respective gates of the at least two sub modules individually to external circuit components.09-29-2011
20130153956SILICON ON INSULATOR INTEGRATED HIGH-CURRENT N TYPE COMBINED SEMICONDUCTOR DEVICE - A silicon on insulator integrated high-current N type combined semiconductor device, which can improve the current density, comprises a P type substrate and a buried oxide layer arranged thereon. A P type epitaxial layer divided into a region I and a region II is arranged on the buried oxide layer. The region I comprises an N type drift region, a P type deep well, an N type buffer well, a P type drain region, an N type source region and a P type body contact region; a field oxide layer and agate oxide layer are arranged on a silicon surface, and a polysilicon lattice is arranged on the gate oxide layer. The region II comprises an N type triode drift region, a P type deep well, an N type triode buffer well, a P type emitting region, an N type base region, an N type source region and a P type body contact region; a field oxide layer and a gate oxide layer are arranged on a silicon surface, and a polysilicon lattice is arranged on the gate oxide layer. It is characterized in that the N type base region is wrapped in the N type buffer region, and the drain electrode metal on the P type drain region is connected with the base electrode metal on the N type base region by a metal layer. In this invention, the current density of the device has been obviously improved without increasing the device area and reducing other performances of the device.06-20-2013
20130187196Integrated Circuit Including Field Effect Transistor Structures with Gate and Field Electrodes and Methods for Manufacturing and Operating an Integrated Circuit - An integrated circuit includes a first and a second field effect transistor structure. The first field effect transistor structure includes a first gate electrode structure and a first field electrode structure. The second field effect transistor structure includes a second gate electrode structure and a second field electrode structure. The first and the second gate electrode structures are electrically separated from each other. The first and the second field electrode structures are separated from each other.07-25-2013
20110309408SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING SAME - A semiconductor device provided with: an island and an island which are separated from each other; leads which approach the islands at one end; a control element which is attached to the island and is connected to a lead through a thin metal wire; and a switching element which is attached to the island and is connected to the lead through a metal wire. Further, the thin metal wire and the thin metal wire are arranged so as to the intersect.12-22-2011
20120007142SEMICONDUCTOR DEVICE HAVING SEMICONDUCTOR SUBSTRATE INCLUDING DIODE REGION AND IGBT REGION - Provided is a semiconductor device including a semiconductor substrate in which a diode region and an IGBT region are formed. A separation region formed of a p-type semiconductor is formed in a range between the diode region and the IGBT region and extending from an upper surface of the semiconductor substrate to a position deeper than both a lower end of an anode region and a lower end of a body region. A diode lifetime control region is formed within a diode drift region. A carrier lifetime in the diode lifetime control region is shorter than that in the diode drift region outside the diode lifetime control region. An end of the diode lifetime control region on an IGBT region side is located right below the separation region.01-12-2012
20120018777THREE LEVEL POWER CONVERTING DEVICE - Aspects of the invention are directed to a three-level power converter that has, as one phase, a bidirectional switching element connected to the series connection point of a series circuit of a first insulated gate bi-polar transistor (“IGBT”) and second IGBT and an intermediate electrode of a direct current power supply. Also included is a fuse connected between the bidirectional switching element and the intermediate electrode of the direct current power supply, and an overcurrent shutdown unit provided in each gate drive circuit of the first and second IGBTs, are provided as protection from a power supply short circuit phenomenon occurring in the event of a short circuit failure of any of the IGBTs or diodes.01-26-2012
20120037955Transistor Component with Reduced Short-Circuit Current - A transistor component includes in a semiconductor body a source zone and a drift zone of a first conduction type, and a body zone of a second conduction type complementary to the first conduction type, the body zone arranged between the drift zone and the source zone. The transistor component further includes a source electrode in contact with the source zone and the body zone, a gate electrode adjacent the body zone and dielectrically insulated from the body zone by a gate dielectric layer, and a diode structure connected between the drift zone and the source electrode. The diode structure includes a first emitter zone adjoining the drift zone in the semiconductor body, and a second emitter zone of the first conduction type adjoining the first emitter zone. The second emitter zone is connected to the source electrode and has an emitter efficiency γ of less than 0.7.02-16-2012
20120080718SEMICONDUCTOR DEVICE - The present teachings provide a semiconductor device comprising: an IGBT element region, a diode element region and a boundary region provided between the IGBT element region and the diode element region are formed in one semiconductor substrate. The boundary region comprises a second conductivity type first diffusion region, a first conductivity type second diffusion region, and a second conductivity type third diffusion region. A first drift region of the IGBT element region contiguously contacts the first diffusion region of the boundary region, and a second drift region of the diode element region contiguously contacts the first diffusion region of the boundary region. A first body region of the IGBT element region contiguously contacts the second diffusion region of the boundary region, and a second body region of the diode element region contiguously contacts the second diffusion region of the boundary region.04-05-2012

Patent applications in class Combined with other solid-state active device in integrated structure