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257 - Active solid-state devices (e.g., transistors, solid-state diodes)

257079000 - INCOHERENT LIGHT EMITTER STRUCTURE

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DocumentTitleDate
20130026535FORMATION OF INTEGRAL COMPOSITE PHOTON ABSORBER LAYER USEFUL FOR PHOTOACTIVE DEVICES AND SENSORS - Methods of forming photoactive devices include infiltrating pores of a solid porous ceramic material with a fluid, which may be a supercritical fluid, carrying at least one single source precursor therein. The single source precursor may be decomposed to form a plurality of particles within the pores of the solid porous ceramic material. Photoactive devices include a solid porous ceramic material exhibiting electrical conductivity, and a plurality of photoactive semiconductor particles within pores of the solid porous ceramic material.01-31-2013
20110204412METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT - Provided is a method for manufacturing a semiconductor light emitting element, by which semiconductor light emitting elements having excellent light extraction efficiency can be manufactured at high yield. The method includes: a grinding step for grinding a surface to be ground (08-25-2011
20090085056OPTICAL SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - According to an aspect of the present invention, there is provided an optical semiconductor device, comprising, a first AlN clad-layer, a first nitride semiconductor guide-layer formed on the first AlN clad-layer, refractive index of the first nitride semiconductor guide-layer being larger than refractive index of the first AlN clad-layer, a nitride semiconductor core-layer formed on the first nitride semiconductor guide-layer, refractive index of the nitride semiconductor core-layer being larger than refractive index of the first AlN clad-layer and smaller than refractive index of the first nitride semiconductor guide-layer, a second nitride semiconductor guide-layer formed on the nitride semiconductor core-layer, refractive index of the second nitride semiconductor guide-layer being larger than refractive index of the nitride semiconductor core-layer, a second AlN clad-layer formed on the second nitride semiconductor guide-layer.04-02-2009
20100078672Group III nitride semiconductor light-emitting device and production method therefor - Provided is a method for producing a Group III nitride semiconductor light-emitting device including a GaN substrate serving as a growth substrate, which method realizes processing of the GaN substrate to have a membrane structure at high reproducibility. In the production method, a stopper layer of AlGaN having an Al compositional proportion of 20% is formed on the top surface of a GaN substrate; an n-type layer, an active layer, a p-type layer, and a p-electrode are sequentially formed on the stopper layer; and the p-electrode is joined to a support substrate. Subsequently, a mask having a center-opening pattern is formed on the bottom surface of the GaN substrate, and the bottom surface is subjected to PEC etching. The bottom surface is irradiated with light having a wavelength corresponding to an energy higher than the band gap of GaN, but lower than the band gap of AlGaN having an Al compositional proportion of 20%. Since etching stops when it proceeds to a depth reaching the stopper layer, a membrane structure can be formed at high reproducibility.04-01-2010
20130075782Light Emitting Element, Light Emitting Device, and Electronic Device - An object is to improve luminous efficiency of a light emitting element using triplet exciton energy effectively. Another object is to reduce power consumption of a light emitting element, a light emitting device, and an electronic device. Triplet exciton energy generated in a light emitting layer which exhibits short wavelength fluorescence can be effectively utilized by use of a structure in which the light emitting layers which exhibit short wavelength fluorescence are sandwiched between light emitting layers each including a phosphorescent compound. Further, the emission balance can be improved between the light emitting layer including a phosphorescent compound and the light emitting layer which exhibits fluorescence by the devising of the structure of the light emitting layer which exhibits fluorescence.03-28-2013
20090173965METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE MANUFACTURED USING THE METHOD - There are provided a method of manufacturing a nitride semiconductor light emitting device and a nitride semiconductor light emitting device manufactured using the same. A method of manufacturing a nitride semiconductor light emitting device according to an aspect of the invention includes: forming a mask layer on a substrate; removing a portion of the mask layer to form openings provided as regions where light emitting structures are formed; forming a light emitting structure by sequentially growing a first conductivity type nitride semiconductor layer, an active layer, and a second conductivity type nitride semiconductor layer on the substrate through each of the openings of the mask layer; and forming first and second electrodes to be electrically connected to the first and second conductivity type nitride semiconductor layers, respectively.07-09-2009
20090159924SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR FABRICATING THE SAME - The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.06-25-2009
20090159923Nitride semiconductor light emitting device, method of manufacturing nitride semiconductor light emitting device, and nitride semiconductor transistor device - Provided are a nitride semiconductor light emitting device including a coat film formed at a light emitting portion and including an aluminum nitride crystal or an aluminum oxynitride crystal, and a method of manufacturing the nitride semiconductor light emitting device. Also provided is a nitride semiconductor transistor device including a nitride semiconductor layer and a gate insulating film which is in contact with the nitride semiconductor layer and includes an aluminium nitride crystal or an aluminum oxynitride crystal.06-25-2009
20090159922NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - There is provided a nitride semiconductor light emitting device including: a light emitting structure having n-type and p-type nitride semiconductor layers and an active layer formed therebetween; n-type and p-type electrodes electrically connected to the n-type and p-type nitride semiconductors, respectively; and an n-type ohmic contact layer formed between the n-type nitride semiconductor layer and the n-type electrode and having a first layer formed of a material containing In and a second layer formed on the first layer and formed of a material containing W.06-25-2009
20090159921NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT, NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SUCH NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - A nitride semiconductor device according to the present invention includes a n-GaN substrate 06-25-2009
20090134428NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A nitride semiconductor device includes: a semiconductor substrate; a p-type semiconductor layer formed over the semiconductor substrate, made of a nitride semiconductor, and containing first impurities; and an insulating film contacting the p-type semiconductor layer and having an impurity region containing second impurities for trapping hydrogen. Since residual hydrogen in the p-type semiconductor layer is trapped in the impurity region, the hydrogen concentration in the impurity region is higher than that in the insulating film excluding the impurity region.05-28-2009
20100123167METHOD FOR MANUFACTURING GALLIUM OXIDE BASED SUBSTRATE, LIGHT EMITTING DEVICE, AND METHOD FOR MANUFACTURING THE LIGHT EMITTING DEVICE - A light emitting device includes a gallium oxide based substrate, a gallium oxynitride based layer on the gallium oxide based substrate, a first conductivity-type semiconductor layer on the gallium oxynitride based layer, an active layer on the first conductivity-type semiconductor layer, and a second conductivity-type semiconductor layer on the active layer.05-20-2010
20080277686Light emitting device and method for making the same - A light emitting diode includes: an epitaxial substrate having a roughened side and formed with alternately disposed ridges and valleys at the roughened side, each of the ridges having a roughened surface that is formed with a dense concentration of alternately disposed pits and protrusions; and an epitaxial layered structure formed on and covering the ridges and the valleys of the epitaxial substrate. A method for making the light emitting diode involves forming the epitaxial substrate with the ridges and valleys prior to the formation of the epitaxial layered structure.11-13-2008
20090045434GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE - A gallium nitride-based compound semiconductor light-emitting device including a positive electrode having openings, which is excellent in light extraction efficiency. The gallium nitride-based compound semiconductor light-emitting device includes a substrate; an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer, the layers being formed of a gallium nitride-based compound semiconductor and being stacked in this order on the substrate; a positive electrode which is provided so as to contact the p-type semiconductor layer; and a negative electrode which is provided so as to contact the n-type semiconductor layer, where the positive electrode is a positive electrode having openings, and at least a portion of the surface of the p-type semiconductor layer corresponding to the openings are roughened surface derived from spherical particulates.02-19-2009
20100327311GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND PRODUCTION METHOD THEREOF, AND LAMP - There are provided a group III nitride semiconductor light emitting device which is constituted of a substrate, an intermediate layer formed thereon having a favorable level of orientation properties, and a group III nitride semiconductor formed thereon having a favorable level of crystallinity, and having excellent levels of light emitting properties and productivity; a production method thereof; and a lamp, 12-30-2010
20090321782Apparatus And Method For Nanowire Optical Emission - An optical emitter includes at least one nanowire connected in a circuit such that current selectively flows into the nanowire. The nanowire has a length-to-diameter ratio of ten or less. A method for generating optical emission includes applying a voltage across a nanowire to inject charge carriers into the nanowire, the nanowire having a length-to-diameter ratio of ten or less; and confining the charge carriers within the nanowire by placing a high bandgap material at each end of the nanowire, wherein the charge carriers recombine to emit optical energy.12-31-2009
20100133582NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - A nitride semiconductor light emitting device includes: a multilayer structure a plurality of nitride semiconductor layers including a light emitting layer where the multilayer structure has cavity facets facing each other; and a plurality of protective films made of dielectric materials on at least one of the cavity facets. Among the plurality of protective films, a first protective film in contact with the cavity facet is made of a material containing no oxygen. A second protective film on a surface of the first protective film opposite to the cavity facet is made of a material containing aluminum lower in crystallization temperature than the first protective film. A third protective film on a surface of the second protective film opposite to the first protective film has an exposed surface and made of a material higher in crystallization temperature than the second protective film.06-03-2010
20120217538NITRIDE BASED LIGHT EMITTING DEVICE USING WURTZITE POWDER AND METHOD OF MANUFACTURING THE SAME - Disclosed is a nitride-based light emitting device using powders of a material having a Wurtzite lattice structure, such as ZnO powders. The nitride-based light emitting device includes a growth substrate, a lattice buffer layer formed on the growth substrate, and a light emitting structure formed on the lattice buffer layer and having a plurality of nitride layers stacked therein, wherein the lattice buffer layer is formed of powders of a material having a Wurtzite lattice structure. The lattice buffer layer is formed of ZnO powders, thereby minimizing occurrence of dislocations caused by a difference in lattice constant between a nitride layer and the growth substrate during growth of the nitride layer. A method of manufacturing the same is also disclosed.08-30-2012
20120217537NITRIDE BASED LIGHT EMITTING DEVICE USING PATTERNED LATTICE BUFFER LAYER AND METHOD OF MANUFACTURING THE SAME - Disclosed is a method of manufacturing a nitride-based light emitting device, in which a patterned lattice buffer layer is formed to minimize dislocation density upon growth of a nitride layer and an air gap is formed to enhance brightness of the light emitting device. The method includes depositing a material having a Wurtzite lattice structure on a substrate to form a deposition layer, forming an etching pattern on a surface of the deposition layer to form a patterned lattice buffer layer, and growing a nitride layer on the patterned lattice buffer layer. During the growth of the nitride layer, the patterned lattice buffer layer is removed to form an air gap at a portion of the nitride layer from which the patterned lattice buffer layer is removed. A nitride-based light emitting device manufactured thereby is also disclosed.08-30-2012
20120217536NITRIDE BASED LIGHT EMITTING DEVICE WITH EXCELLENT CRYSTALLINITY AND BRIGHTNESS AND METHOD OF MANUFACTURING THE SAME - Disclosed is a nitride-based light emitting device capable of improving crystallinity and brightness. The nitride-based light emitting device includes a growth substrate, a lattice buffer layer formed on the growth substrate, a p-type nitride layer formed on the lattice buffer layer, a light emitting active layer formed on the p-type nitride layer, and an n-type ZnO layer formed on the light emitting active layer. The lattice buffer layer is formed of powders of a material having a Wurtzite lattice structure. The lattice buffer layer is formed of ZnO powders, thereby minimizing generation of dislocations during nitride growth. A method of manufacturing the same is also disclosed.08-30-2012
20090194784GROUP-III NITRIDE COMPOUND SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF, GROUP-III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PRODUCTION METHOD THEREOF, AND LAMP - A group-III nitride compound semiconductor device of the present invention comprises a substrate, an intermediate layer provided on the substrate, and a base layer provided on the intermediate layer in which a full width at half maximum in rocking curve of a (0002) plane is 100 arcsec or lower and a full width at half maximum in rocking curve of a (10-10) plane is 300 arcsec or lower. Also, a production method of a group-III nitride compound semiconductor device of the present invention comprises forming the intermediate layer by using a sputtering method.08-06-2009
20120112239NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR FABRICATING THEREOF - Disclosed is a nitride semiconductor light-emitting device, including a substrate, a nitride semiconductor layer including a first conductive layer, an active layer and a second conductive layer located on the substrate, a first electrode formed on the first conductive layer, and a second electrode formed on the second conductive layer, wherein a pattern having one or more protrusions formed at a predetermined interval and concave portions resulting from depression of upper surfaces of the protrusions to a predetermined depth is formed on the surface of the substrate which abuts with the first conductive layer. A method of fabricating the nitride semiconductor light-emitting device is also provided. When the substrate having a pattern with protrusions and concave portions is used, higher light extraction efficiency can be obtained.05-10-2012
20120305983METHOD FOR PRODUCING GROUP-III NITRIDE SEMICONDUCTOR CRYSTAL, GROUP-III NITRIDE SEMICONDUCTOR SUBSTRATE, AND SEMICONDUCTOR LIGHT EMITTING DEVICE - The method for producing a group III nitride semiconductor crystal comprises preparing a seed crystal having a non-polar plane followed by growing a group III nitride semiconductor from the non-polar plane in a vapor phase, wherein the growing includes growing the group III nitride semiconductor so as to extend in the +C-axis direction of the seed crystal. A group III-V nitride semiconductor crystal having high quality and a large-area non-polar plane can be obtained by the method.12-06-2012
20090078961NITRIDE-BASED LIGHT EMITTING DEVICE - The present invention relates to a nitride-based light emitting device having a buffer layer, an n-type nitride semiconductor layer, an active layer and a p-type semiconductor layer sequentially formed on a substrate, wherein an Al03-26-2009
20130062660GROUP 13 NITRIDE CRYSTAL AND SUBSTRATE THEREOF - A group 13 nitride crystal has a hexagonal crystal structure and at least contains nitrogen atom and at least a kind of metal atoms selected from a group consisting of B, Al, Ga, In, and Tl. The group 13 nitride crystal includes a first region located at an inner side of a cross section intersecting a c-axis, and a second region surrounding at least a part of an outer periphery of the first region, having a thickness larger than a maximum diameter of the first region, and having a carrier density higher than that of the first region.03-14-2013
20130062659Organic Light Emitting Diode Display - An organic light emitting diode display includes: a base film made of plastic; a thin film transistor and an organic light emitting diode formed on the base film; and a carbon nanotube thin film disposed among the base film, the thin film transistor, and the organic light emitting diode.03-14-2013
20110012169NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - A nitride semiconductor light-emitting device includes a substrate (01-20-2011
20110012168COMPOUND SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND ILLUMINATION DEVICE USING THE SAME, AND METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR LIGHT-EMITTING ELEMENT - A compound semiconductor light-emitting element includes: a substrate; a first electrode provided on one face of the substrate; a plurality of nanoscale columnar crystalline structures in which an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer are stacked in order on the other face of the substrate; a second electrode connected to top portions of the plurality of columnar crystalline structures; and a foundation layer, provided on the side of the other face, in a first region being a partial region of the substrate; wherein a level difference is provided, on the other face, between the first region and a second region being at least part of a remaining region of the substrate excluding the first region.01-20-2011
20110012167LIGHT EMITTING ELEMENT - A light emitting device includes a pair of electrodes facing to each other and a phosphor layer which is sandwiched between the pair of electrodes and includes phosphor particles placed therein. The phosphor particles include an n-type nitride semiconductor part and a p-type nitride semiconductor part, the n-type nitride semiconductor part and the p-type nitride semiconductor part are made of respective single crystals having wurtzite-type crystal structures having c axes parallel with each other, and the phosphor particles include an insulation layer provided to overlie one end surface out of their end surfaces perpendicular to the c axes.01-20-2011
20090236630NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride semiconductor light emitting device includes a nitride semiconductor multilayer film. The nitride semiconductor multilayer film is formed on a substrate and made of nitride semiconductor crystals, and includes a light emitting layer. In the nitride semiconductor multilayer film, facets of a cavity are formed, and a protective film made of aluminum nitride crystals is formed on at least one of the facets. The protective film has a crystal plane whose crystal axes form an angle of 90 degrees with crystal axes of a crystal plane of the nitride semiconductor crystals constituting the facet of the cavity having the protective film formed thereon.09-24-2009
20090236629Sustrate and Semiconductor Light-Emitting Device - The present invention provides a substrate and a semiconductor light emitting device. Convexes having a curved surface are formed on the substrate. The semiconductor light emitting device comprises a substrate on which convexes having a curved surface are formed and a semiconductor layer on the substrate.09-24-2009
20130069107NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A nitride semiconductor light emitting device includes: an uneven substrate having an uneven structure in which recesses are formed; a first nitride semiconductor layer of a first conductive type formed on the uneven structure; a first light emitting layer formed on the first nitride semiconductor layer; and a second nitride semiconductor layer of a second conductive type formed on the light emitting layer, wherein each protrusion has a bottom made of a material or composition having a thermal expansion coefficient larger than the thermal expansion coefficient of the material or composition of the first nitride semiconductor layer.03-21-2013
20110298005METHOD FOR FABRICATING AN N-TYPE SEMICONDUCTOR MATERIAL USING SILANE AS A PRECURSOR - A method for fabricating a group III-V n-type nitride structure comprises fabricating a growth Si substrate and then depositing a group III-V n-type layer above the Si substrate using silane gas (SiH12-08-2011
20110298006SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor light emitting device includes a nitride semiconductor layer including a first cladding layer, an active layer, and a second cladding layer, and a current blocking layer configured to selectively inject a current into the active layer. The second cladding layer has a stripe-shaped ridge portion. The current blocking layer is formed in regions on both sides of the ridge portion, and is made of zinc oxide having a crystalline structure.12-08-2011
20100123166SEMICONDUCTOR LIGHT-EMITTING DEVICE - Embodiments relate to a semiconductor light-emitting structure.05-20-2010
20090309127SELECTIVE AREA EPITAXY GROWTH METHOD AND STRUCTURE - A gallium containing crystalline material. The material comprises a bulk semi-polar gallium indium containing crystalline material having a thickness of about 20 nanometers to about 1000 nanometers. The material includes a spatial width dimension of no greater than about 10 microns characterizing the thickness of the bulk semi-polar gallium indium containing crystalline material. The material includes a photoluminescent characteristic of the crystalline material having a first wavelength, which is at least five nanometers greater than a second wavelength, which is derived from an indium gallium containing crystalline material grown on a growth region of greater than about 15 microns.12-17-2009
20110284919METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LAYER, METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP - A method for manufacturing a Group III nitride semiconductor layer according to the present invention includes a sputtering step of disposing a substrate and a target containing a Group III element in a chamber, introducing a gas for formation of a plasma in the chamber and forming a Group III nitride semiconductor layer added with Si as a dopant on the substrate by a reactive sputtering method, wherein a Si hydride is added in the gas for formation of a plasma.11-24-2011
20110284917COMPOUND SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR DEVICE - A compound semiconductor device includes: an Au alloy electrode, an interlayer insulating film, a metal interconnection, and an oxide film. The Au alloy electrode is formed on a compound semiconductor. The interlayer insulating film is formed on the Au alloy electrode. The metal interconnection is connected to the Au alloy electrode via a contact hole formed in the interlayer insulating film. The oxide film is formed at an interface between the Au alloy electrode and the interlayer insulating film, dominating component of the oxide film is a constituent element of the compound semiconductor.11-24-2011
20110284918OPTOELECTRONIC SEMICONDUCTOR COMPONENT - An optoelectronic semiconductor component includes an active layer that emits radiation, the active layer surrounded by cladding layers, wherein the cladding layers and/or the active layer include(s) an indium-containing phosphide compound semiconductor material and the phosphide compound semiconductor material contains at least one of elements Bi or Sb as an additional element of main group V.11-24-2011
20090206362Light emitting diode by use of metal diffusion bonding technology and method of producing such light emitting diode - The main objective of present invention is to provide a manufacturing method of light emitting diode that utilizes metal diffusion bonding technology. AlInGaP light emitting diode epitaxial structure on a temporary substrate is bonded to a permanent substrate having a thermal expansion coefficient similar to that of the epitaxial structure, and then the temporary substrate is removed to produce an LED having a vertical structure and better performance. The other objective of the present invention is to provide a high performance LED that uses metal diffusion technology and wet chemical etching technology to roughen the LED surface in order to improve light extraction efficiency.08-20-2009
20090206361GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD FOR PRODUCING THE SAME, AND LAMP THEREOF - A group III nitride semiconductor light emitting device with a double sided electrode structure which has a low driving voltage as well as excellent light emission efficiency is provided, and the group III nitride semiconductor light emitting device includes at least an impurity layer 08-20-2009
20090090930EPITAXIAL SUBSTRATE AND MANUFACTURING METHOD THEREOF AND MANUFACTURING METHOD OF LIGHT EMITTING DIODE APPARATUS - A manufacturing method of an epitaxial substrate includes the steps of: forming a sacrificial layer, which has a first micro/nano structure, on a substrate; and forming a buffer layer on the sacrificial layer. The sacrificial layer comprises a plurality of micro/nano particles, and the first micro/nano structure is formed after the plurality of micro/nano particles are removed. An epitaxial substrate and a manufacturing method of a light emitting diode (LED) apparatus are also disclosed.04-09-2009
20110291156ORGANIC ELECTROLUMINESCENT ELEMENT - An organic compound layer includes a fluorescent light-emitting sub-layer, a phosphorescent light-emitting sub-layer, and an exciton generation sub-layer which is disposed therebetween and which generates excitons. The interface between the fluorescent light-emitting sub-layer and the exciton generation sub-layer serves as an energy barrier for carriers. Excitons are generated on the exciton generation sub-layer side of the interface therebetween.12-01-2011
20100090247SURFACE TREATMENT METHOD OF GROUP III NITRIDE SEMICONDUCTOR, GROUP III NITRIDE SEMICONDUCTOR, MANUFACTURING METHOD OF THE SAME AND GROUP III NITRIDE SEMICONDUCTOR STRUCTURE - There is provided a surface treatment method of a group III nitride semiconductor including: providing a group III nitride semiconductor including a first surface having a group III polarity and a second surface opposing the first surface and having a nitrogen polarity; and irradiating a laser beam onto the second surface to change the nitrogen polarity of the second surface to the group III polarity.04-15-2010
20120098028PHOTOELECTRIC CONVERSION ELEMENT AND MANUFACTURING METHOD THEREOF - A photoelectric conversion element in accordance with an embodiment includes a photoelectric conversion layer, a cathode electrode, and an anode electrode. The cathode electrode is arranged on one surface of the photoelectric conversion layer and includes monolayer graphene and/or multilayer graphene in which a portion of carbon atoms is substituted with at least nitrogen atoms. The anode electrode is arranged on the other surface of the photoelectric conversion layer.04-26-2012
20090179220SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP - The present invention provides a semiconductor light-emitting device capable of effectively emitting ultraviolet light and a method of manufacturing the same.07-16-2009
20090140287III Nitride Crystal Substrate, and Light-Emitting Device and Method of Its Manufacture - Toward making available III nitride crystal substrates advantageously employed in light-emitting devices, and light-emitting devices incorporating the substrates and methods of manufacturing the light-emitting devices, a III nitride crystal substrate has a major face whose surface area is not less than 10 cm06-04-2009
20090278164GaN-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR THE FABRICATION THEREOF - A GaN-based semiconductor light-emitting device 11-12-2009
20090101934Monolithic White Light-Emitting Diode - The invention relates to a device comprising a matrix made of III-V nitride, said matrix comprising at least an active first portion through which an electrical current passes and at least a passive second portion through which no electrical current passes, said matrix comprising at least a first zone forming a first quantum confinement region made of a III-V nitride, said first zone being positioned in said active first portion, and at least a second zone forming a second quantum confinement region made of III-V nitride, characterized in that said second zone is positioned to said passive portion of said matrix.04-23-2009
20090050929SEMICONDUCTOR SUBSTRATE WITH NITRIDE-BASED BUFFER LAYER FOR EPITAXY OF SEMICONDUCTOR OPTO-ELECTRONIC DEVICE AND FABRICATION THEREOF - The invention discloses a semiconductor substrate for epitaxy of a semiconductor optoelectronic device and the fabrication thereof. The semiconductor substrate according to the invention includes a substrate, and a nitride-based buffer layer. The buffer layer is formed by an atomic layer deposition process and/or a plasma-enhanced (or a plasma-assisted) atomic layer deposition process on an upper surface of the substrate. The nitride-based buffer layer assists the epitaxial growth of a semiconductor material layer of the semiconductor optoelectronic device.02-26-2009
20090152586LIGHT EMITTING DIODE HAVING ACTIVE REGION OF MULTI QUANTUM WELL STRUCTURE - Disclosed is a light emitting diode having an active region of a multi quantum well structure. The active region is positioned between GaN-based N-type and P-type compound semiconductor layers. At least one of barrier layers in the active region includes an undoped InGaN layer and a Si-doped GaN layer, and the Si-doped GaN layer is in contact with a well layer positioned at a side of the P-type compound semiconductor layer therefrom. Accordingly, carrier overflow and a quantum confined stark effect can be reduced, thereby improving an electron-hole recombination rate. Further, disclosed is an active region of a multi quantum well structure including relatively thick barrier layers and relatively thin barrier layers.06-18-2009
20090152585GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE - It is an object of the present invention to provide a gallium nitride-based compound semiconductor light-emitting device that is excellent in light output efficiency and needs only a low driving voltage (Vf). The inventive gallium nitride-based compound semiconductor light-emitting device includes an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer formed of a gallium nitride-based compound semiconductor and stacked in this order on a substrate, and positive and negative electrodes so arranged as to be in contact with the p-type semiconductor layer and the n-type semiconductor layer, respectively, wherein a region in which a p-type impurity and hydrogen atoms are co-present exists in the p-type semiconductor layer in contact with the positive electrode, and at least a portion, which is in contact with the p-type semiconductor layer, of the positive electrode, is formed of an n-type electro-conductive light transmitting material.06-18-2009
20080237629Group III-V Semiconductor device and method for producing the same - A Group III-V semiconductor device bonded to a conductive support substrate, which device has a side surface whose surface layer has a high-resistance region formed through ion implantation.10-02-2008
20080237628LIGHT EMITTING DEVICE AND MANUFACTURING METHOD - A light emitting device of the invention includes an electron transporting layer, a hole transporting layer provided mutually facing the electron transporting layer with a distance between the hole transporting layer and the electron transporting layer, a phosphor layer having a layer of a plurality of semiconductor fine particles sandwiched between the electron transporting layer and the hole transporting layer, a first electrode provided facing the electron transporting layer and connected electrically, and a second electrode provided facing the hole transporting layer and connected electrically: in which the semiconductor fine particles composing the phosphor layer have a p-type part and an n-type part inside of the particles and have a pn-junction in the interface of the p-type part and the n-type part and are arranged in a manner that the p type part is partially brought into contact with the hole transporting layer and at the same time, the n type part is partially brought into contact with the electron transporting layer.10-02-2008
20100117115METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT, AND SEMICONDUCTOR LIGHT EMITTING ELEMENT - A method includes steps of: sequentially growing a first semiconductor layer of a first conductivity type, an active layer, and a second semiconductor layer of a second conductivity type on a growth substrate to form a layered structure; separating the substrate from the layered structure to expose the first layer; performing wet etching on an exposed surface to form defect depressions; forming an insulating layer on the exposed surface; polishing the insulating layer and the first layer to flatten the surface of the first layer; and performing wet etching on the surface of the first layer to form protrusions deriving from a crystal structure.05-13-2010
20090309126Group III nitride-based compound semiconductor light-emitting device and production method therefor - Provided is a Group III nitride-based compound semiconductor light-emitting device including aluminum regions. The Group III nitride-based compound semiconductor light-emitting device includes a sapphire substrate; aluminum regions which are formed on the substrate; an AlN buffer layer; an Si-doped GaN n-contact layer; an n-cladding layer formed of multiple layer units, each including an undoped In12-17-2009
20090085057III-Nitride Semiconductor Light Emitting Device - The present disclosure relates to a III-nitride semiconductor light emitting device, and more particularly, to a III-nitride semiconductor light emitting device which can facilitate current spreading and improve electrostatic discharge characteristic by providing an undoped GaN layer with a thickness over 100 Å in an n-side contact layer.04-02-2009
20090267109COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A compound semiconductor light-emitting device which includes an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, that are made of a compound semiconductor, formed on a substrate, the n-type semiconductor layer and the p-type semiconductor layer are stacked so as to interpose the light-emitting layer therebetween, a first conductive transparent electrode and a second conductive electrode. The first conductive transparent electrode is made of an IZO film containing an In10-29-2009
20110198668SEMI-CONDUCTOR LIGHT EMITTING DEVICE - A semi-conductor light emitting device 08-18-2011
20090283795METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE, GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE, AND LAMP - Provided is a method for producing a group III nitride semiconductor light emitting device capable of producing a group III nitride semiconductor light emitting device with excellent light emitting properties with excellent productivity; a group III nitride semiconductor light emitting device; and a lamp.11-19-2009
20100078671Nitride based semiconductor light emitting device - A nitride based semiconductor light emitting device is revealed. The light emitting device includes a light emitting epitaxial layer, a P-type electrode and a N-type electrode. The P-type electrode and the N-type electrode are disposed on the light emitting epitaxial layer. The light emitting device features on that the N-type electrode is arranged on the inner side of the P-type electrode. The P-type electrode extends toward the N-type electrode along the edge of the light emitting epitaxial layer and the N-type electrode extends inward along the inner side of the P-type electrode. By means of the electrode pattern with special design, the light emitting area of the light emitting device is increased.04-01-2010
20110062488Group III nitride semiconductor light-emitting device - A Group III nitride semiconductor light-emitting device includes an electrically conductive support; a p-electrode provided on the support; a p-type layer, an active layer, and an n-type layer, which are formed of a Group III nitride semiconductor and are sequentially provided on the p-electrode; an n-electrode which is connected to the n-type layer; a first trench extending from the surface of the p-type layer on the p-electrode's side to reach the n-type layer; an auxiliary electrode which is in contact with the surface of the n-type layer serving as the bottom of the first trench, but is not in contact with the side walls of the first trench; and an insulating film which exhibits light permeability and covers the auxiliary electrode and the bottom and side walls of the first trench.03-17-2011
20090206360NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - The present invention provides a nitride semiconductor light emitting device having an n-electrode that has an Au face excellent in ohmic contacts to an n-type nitride semiconductor and excellent in mounting properties, and a method of manufacturing the same. The nitride semiconductor light emitting device uses an n-electrode having a three-layer laminate structure that is composed of a first layer containing aluminum nitride and having a thickness not less than 1 nm or less than 5 nm, a second layer containing one or more metals selected from Ti, Zr, Hf, Mo, and Pt, and a third layer made of Au, from the near side of the n-type nitride semiconductor in order of mention. The n-electrode thus formed is then annealed to obtain ohmic contacts to the n-type nitride semiconductor.08-20-2009
20090090932NITRIDE SEMICONDUCTOR ULTRAVIOLET LEDS WITH TUNNEL JUNCTIONS AND REFLECTIVE CONTACT - A structure and method for improving UV LED efficiency is described. The structure utilizes a tunnel junction to separate a P-doped layer of the LED from a n-doped contact layer. The n-doped contact layer allows the use of a highly reflective, low work function metal, such as aluminum, for the p-side contact. The reflectivity at the contact can be further improved by including a phase matching layer in some areas between the contact metal (The metal above the phase matching layer does not necessarily need to have a low work function because it does need to form an ohmic contact with the n-contact layer) and the n-doped contact layer.04-09-2009
20090045435Stamp having nanoscale structure and applications therefore in light-emitting device - A stamp having a nanoscale structure and a manufacturing method thereof are disclosed. The stamp includes a substrate, a buffer layer, and a nanoscale stamp layer. The method comprises forming a buffer layer on the substrate, and forming a stamp layer having a nanoscale structure on the buffer layer.02-19-2009
20090045433NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND PRODUCTION METHOD THEREOF - The present invention provides a nitride semiconductor light emitting device, which comprises positive and negative electrodes with high adhesion, can output high power, and does not generate heat; specifically, the present invention provides a nitride semiconductor light emitting device comprising at least an ohmic contact layer, a p-type nitride semiconductor layer, a nitride semiconductor light emitting layer, and an n-type nitride semiconductor layer, which are laminated on a plate layer, wherein a plate adhesion layer is formed between the ohmic contact layer and the plate layer, and the plate adhesion layer is made of an alloy comprising 50% by mass or greater of a same component as a main component of an alloy contained in the plate layer.02-19-2009
20090090931SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF FABRICATING THE SAME - The invention discloses a semiconductor light-emitting device and a method of fabricating the same. The semiconductor light-emitting device according to the invention includes a substrate, a buffer layer, a corrosion-resistant film, a multi-layer structure, and an ohmic electrode structure. The buffer layer is grown on an upper surface of the substrate. The corrosion-resistant film is deposited to overlay the buffer layer The multi-layer structure is grown on the corrosion-resistant film and includes a light-emitting region. The buffer layer assists the epitaxial growth of a bottom-most layer of the multi-layer structure. The corrosion-resistant film prevents the buffer layer from being corroded by a gas during the epitaxial growth of the bottom-most layer. The ohmic electrode structure is deposited on the multi-layer structure.04-09-2009
20110198667VAPOR DEPOSITION SYSTEM, METHOD OF MANUFACTURING LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE - There are provided a vapor deposition system, a method of manufacturing a light emitting device, and a light emitting device. A vapor deposition system according to an aspect of the invention may include: a first chamber having a first susceptor and at least one gas distributor discharging a gas in a direction parallel to a substrate disposed on the first susceptor; and a second chamber having a second susceptor and at least one second gas distributor arranged above the second susceptor to discharge a gas downwards.08-18-2011
20090114942APPARATUS FOR MANUFACTURING GROUP-III NITRIDE SEMICONDUCTOR LAYER, METHOD OF MANUFACTURING GROUP-III NITRIDE SEMICONDUCTOR LAYER, GROUP-III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD OF MANUFACTURING GROUP-III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP - The present invention provides an apparatus for manufacturing a group-III nitride semiconductor layer having high crystallinity. An embodiment of the present invention provides an apparatus for manufacturing a group-III nitride semiconductor layer on a substrate 05-07-2009
20090278165Light emitting device and fabrication method therefor - A light emitting device (LED) structure formed on a Group IV-based semiconductor substrate is provided. The LED structure includes a Group IV-based substrate, an AlN nucleation layer formed on the Group IV-based substrate, a GaN epitaxial layer formed on the AlN nucleation layer, a distributed Bragg reflector (DBR) multi-layer structure formed on the epitaxial layer, and an LED active layer formed on the DBR multi-layer structure.11-12-2009
20090294797SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME - A semiconductor light-emitting device according to the present invention includes: a GaN substrate 12-03-2009
20090261377METHOD FOR BONDING SEMICONDUCTOR STRUCTURE WITH SUBSTRATE AND HIGH EFFICIENCY PHOTONIC DEVICE MANUFACTURED BY USING THE SAME METHOD - A method for bonding a semiconductor structure with a substrate and a high efficiency photonic device manufactured by using the same method are disclosed. The method comprises steps of: providing a semiconductor structure and a substrate; forming a composite bonding layer on the semiconductor structure; and bonding the substrate with the composite bonding layer on the semiconductor structure to form a composite alloyed bonding layer. The semiconductor structure includes a compound semiconductor substrate and a high efficiency photonic device is produced after the compound semiconductor substrate is removed. Besides, the composite bonding layer can be formed on the substrate or formed on both the semiconductor structure and substrate simultaneously.10-22-2009
20090261376NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME - The present invention provides a light emitting diode comprising a substrate: a nitride semiconductor layer formed on the substrate; an ITO mask pattern formed on the nitride semiconductor layer; an N-type semiconductor layer formed through lateral growth on the nitride semiconductor layer and the ITO mask pattern; and a P-type semiconductor layer formed on the N-type semiconductor layer. In a nitride semiconductor light emitting diode of the present invention, a nitride semiconductor layer is formed through lateral growth, so that crystal defects can be reduced, thereby enhancing the crystallinity of the semiconductor layer. Accordingly, the performance of the light emitting diode can be enhanced, and the reliability thereof can be secured. Particularly, there is an advantage in that since ITO with high electrical conductivity is used as a mask pattern for lateral growth, so that a current spreading property is improved, thereby enhancing light emitting efficiency.10-22-2009
20090039383VERTICAL LIGHT EMITING DIODE AND METHOD OF MAKING A VERTICAL LIGHT EMITING DIODE - A vertical gallium-nitrate-based LED and method of making a vertical gallium-nitrate-based LED using a stop layer is provided. Embodiments of the present invention use mechanical thinning and a plurality of superhard stop points to remove epitaxial layers with a high level of certainty. According one embodiment, the method of making a vertical LED includes forming a plurality of layers on a sapphire substrate, forming a plurality of stop points in the plurality of layers, removing the sapphire substrate and part of a u-GaN layer using mechanical thinning, wherein the mechanical thinning stops at an end of the plurality of stop points, selectively etching the u-GaN layer and exposing at least a part of the highly doped stop layer, and forming an n-electrode on the highly doped stop layer.02-12-2009
20090166670Anthracene-based compound and organic light emitting device employing the same - Provided are an anthracene-based compound represented by Formula 1 or 2 and an organic light emitting device employing the same:07-02-2009
20090166669NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A nitride semiconductor light emitting device and a method of manufacturing the same, which can prevent crystal defects such as dislocation while ensuring uniform current spreading into an active layer. The nitride semiconductor light emitting device includes a first n-nitride semiconductor layer formed on a substrate, a first intermediate pattern layer formed on the first n-nitride semiconductor layer, the first intermediate pattern layer having a nanoscale dot structure made of Si compound, a second n-nitride semiconductor layer formed on the first n-nitride semiconductor layer, a second intermediate pattern layer formed on the second n-nitride semiconductor layer, the second intermediate pattern layer having a nanoscale dot structure made of Si compound, which is electrically insulating, a third n-nitride semiconductor layer formed on the second n-nitride semiconductor layer, an active layer formed on the third n-nitride semiconductor layer, and a p-nitride semiconductor layer formed on the active layer.07-02-2009
20080246054SELF-SUPPORTED NITRIDE SEMICONDUCTOR SUBSTRATE AND ITS PRODUCTION METHOD, AND LIGHT-EMITTING NITRIDE SEMICONDUCTOR DEVICE USING IT - A self-supported nitride semiconductor substrate of 10 mm or more in diameter having an X-ray diffraction half width of 500 seconds or less in at least one of a {20-24} diffraction plane and a {11-24} diffraction plane.10-09-2008
20110204411CRYSTAL GROWTH METHOD AND SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a crystal growth method is disclosed for growing a crystal of a nitride semiconductor on a major surface of a substrate. The major surface is provided with asperities. The method can include depositing a buffer layer on the major surface at a rate of not more than 0.1 micrometers per hour. The buffer layer includes Ga08-25-2011
20090166668Nitride Semiconductor Light Emitting Device - There is provided a nitride semiconductor light emitting device having high internal quantum efficiency by accelerating recombination radiation while employing a multiple quantum well structure in which each of well layers has a relatively large thickness. The nitride semiconductor light emitting device is provided with a nitride semiconductor lamination portion (07-02-2009
20090050928Zinc-blende nitride semiconductor free-standing substrate, method for fabricating same, and light-emitting device employing same - A zinc-blende nitride semiconductor free-standing substrate has a front surface and a back surface opposite the front surface. The distance between the front and back surfaces is not less than 200 μm. The area ratio of the zinc-blende nitride semiconductor to the front surface is not less than 95%.02-26-2009
20090166667Substrate for Light-Emitting Diode, and Light-Emitting Diode - A substrate for light-emitting diodes, which uses no fluorescent powder, enables formation of a good light-emitting diode element, resulting in less deterioration, transmits light of the light-emitting diode element, emits light by utilizing a part of the transmitted light, and allows the transmitted light and newly emitted light to be mixed and emitted, is provided.07-02-2009
20080283865III-Nitride Compound Semiconductor Light Emitting Device - The present invention relates a III-nitride compound semiconductor light emitting device in which a first layer composed of a carbon-containing compound layer, such as an n-type or p-type silicon carbide (SiC), silicon carbon nitride (SiCN) or carbon nitride layer (CN) layer, is formed on the p-type III-nitride semiconductor layer of the existing III-nitride semiconductor light emitting device, and a second layer composed of a III-nitride semiconductor layer with a given thickness is formed on the first layer.11-20-2008
20080290365NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - A nitride semiconductor light emitting device comprising an n-side nitride semiconductor layer and a p-side nitride semiconductor layer formed on a substrate, with a light transmitting electrode 11-27-2008
20080303053GaN Based LED Having Reduced Thickness and Method for Making the Same - A device having a carrier, a light-emitting structure, and first and second electrodes is disclosed. The light-emitting structure includes an active layer sandwiched between a p-type GaN layer and an n-type GaN layer, the active layer emitting light of a predetermined wavelength in the active layer when electrons and holes from the n-type GaN layer and the p-type GaN layer, respectively, combine therein. The first and second electrodes are bonded to the surfaces of the p-type and n-type GaN layers that are not adjacent to the active layer. The n-type GaN layer has a thickness less than 1.25 μm. The carrier is bonded to the light emitting structure during the thinning of the n-type GaN layer. The thinned light-emitting structure can be transferred to a second carrier to provide a device that is analogous to conventional LEDs having contacts on the top surface of the LED.12-11-2008
20080303055Group-III Nitride-Based Light Emitting Device - Disclosed is a group-III nitride-based light emitting diode. The group-III nitride-based light emitting diode includes a substrate, an n-type nitride-based cladding layer formed on the substrate, a nitride-based active layer formed on the n-type nitride-based cladding layer, a p-type nitride-based cladding layer formed on the nitride-based active layer, and a p-type multi-layered ohmic contact layer formed on the p-type nitride-based cladding layer and including thermally decomposed nitride. The thermally decomposed nitride is obtained by combining nitrogen (N) with at least one metal component selected from the group consisting of nickel (Ni), copper (Cu), zinc (Zn), indium (In) and tin (Sn). An ohmic contact characteristic is enhanced at the interfacial surface of the p-type nitride-based cladding layer of the group-III nitride-based light emitting device, thereby improving the current-voltage characteristics. In addition, since the light transmittance of the transparent electrode is improved, light efficiency and brightness of the group-III nitride-based light emitting device are also improved.12-11-2008
20080308835SILICON BASED SOLID STATE LIGHTING - A semiconductor device includes a substrate comprising a first surface having a first orientation and a second surface having a second orientation and a plurality of III-V nitride layers on the substrate, wherein the plurality of III-V nitride layers are configured to emit light when an electric current is produced in one or more of the plurality of III-V nitride layers.12-18-2008
20090032836SEMICONDUCTOR LIGHT EMITTING DIODE THAT USES SILICON NANO DOT AND METHOD OF MANUFACTURING THE SAME - Provided is a semiconductor light emitting diode that uses a silicon nano dot and a method of manufacturing the same. The semiconductor light emitting diode includes a light emitting layer that emits light; a hole injection layer formed on the light emitting layer; an electron injection layer formed on the light emitting layer to face the hole injection layer; a metal layer that comprises a metal nano dot and is formed on the electron injection layer; and a transparent conductive electrode formed on the metal layer. Amorphous silicon nitride that includes the silicon nano dot is used as the light emitting layer.02-05-2009
20090315069THIN GALLIUM NITRIDE LIGHT EMITTING DIODE DEVICE - Disclosed is a light emitting diode (LED) device that comprises a crystal structure of a sapphire substrate-free gallium nitride (GaN) LED, wherein the crystal structure is mounted on a first surface of a sub-mount substrate in the form of a unit chip, and the first surface of the sub-mount substrate has a surface area greater than the surface area of a region in which the unit chip is bonded. Preforms for manufacturing the LED device and a method for manufacturing the LED device are also disclosed. The sapphire substrate, on which the crystal structure of the light emitting diode has grown, is processed into a unit chip before being removed. Thus, any crack in the crystal structure of the light emitting diode that may occur during the removal of the sapphire substrate can be prevented. Therefore, a thin light emitting diode device can be manufactured in a mass production system.12-24-2009
20090014752SEMICONDUCTOR LIGHT SOURCE AND LIGHT-EMITTING DEVICE DRIVE CIRCUIT - A semiconductor light source includes a light-emitting device 01-15-2009
20090014751III-Nitride Semiconductor Light Emitting Device and Method for Manufacturing the Same - Disclosed herein is a IE-nitride semiconductor light emitting device comprising a plurality of nitride semiconductor layers including a substrate and an active layer deposited on the substrate, in which the substrate is provided with protrusions to let the lights generated in the active layer emit out of the light emitting device and each of the protrusions has a first scattering plane and a second scattering plane, which are not parallel to each other.01-15-2009
20080265275SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR - A laser diode includes a first n-cladding layer disposed on and lattice-matched to an n-semiconductor substrate, wherein the first n-cladding layer is n-AlGaInP or n-GaInP; a second n-cladding layer of n-AlGaAs supported by the first n-cladding layer; and an inserted layer disposed between the first n-cladding layer and the second n-cladding layer, wherein the inserted layer includes the same elements as the first n-cladding layer, the inserted layer has the same composition ratios of Al and Ga (and P) as the first n-cladding layer, and the inserted layer contains a lower composition ratio of In than the first n-cladding layer.10-30-2008
20110006337LIGHT EMITTING DEVICE HAVING PROTRUSION AND RECESS STRUCTURE AND METHOD OF MANUFACTURING THE SAME - The semiconductor light emitting device having a protrusion and recess structure includes: a lower clad layer disposed on a substrate; an active layer formed on one portion of a top surface of the lower clad layer; an upper clad layer formed on the active layer; a first electrode formed on the upper clad layer; and a second electrode that is formed on a protrusion and recess structural pattern region formed on a portion of the top surface of the lower clad layer not occupied by the active layer.01-13-2011
20090127581NITRIDE-BASED LIGHT-EMITTING DEVICE - A nitride-based light-emitting device includes a substrate and a plurality of layers formed over the substrate in the following sequence: a nitride-based buffer layer formed by nitrogen, a first group III element, and optionally, a second group III element, a first nitride-based semiconductor layer, a light-emitting layer, and a second nitride-based semiconductor layer.05-21-2009
20090026490LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - Provided is a light emitting device. The light emitting device comprises a second electrode layer, a second conduction type semiconductor layer, an active layer, a first conduction type semiconductor layer, a first electrode layer, and an insulating layer. The second conduction type semiconductor layer is formed on the second electrode layer. The active layer is formed on the second conduction type semiconductor layer. The first conduction type semiconductor layer is formed on the active layer. The first electrode layer is formed on the first conduction type semiconductor layer. The insulating layer is disposed between the second electrode layer and the second conduction type semiconductor layer.01-29-2009
20090032833LIGHT EMITTING DIODE HAVING ALGAN BUFFER LAYER AND METHOD OF FABRICATING THE SAME - The present invention relates to a light emitting diode having an Al02-05-2009
20090050927METHOD OF FABRICATION InGaAlN FILM AND LIGHT-EMITTING DEVICE ON A SILICON SUBSTRATE - There is provided a method of fabricating InGaAlN film on a silicon substrate, which comprises the following steps of forming a pattern structured having grooves and mesas on the silicon substrate, and depositing InGaAlN film on the surface of substrate, wherein the depth of the grooves is more than 6 nm, and the InGaAlN film formed on the mesas of both sides of the grooves are disconnected in the horizontal direction. The method may grow high quality, no crack and large area of InGaAlN film by simply treating the substrate. At the same time, there is also provided a method of fabricating InGaAlN light-emitting device by using the silicon substrate.02-26-2009
20090321781QUANTUM DOT DEVICE AND METHOD OF MAKING THE SAME - A semiconductor device includes an Al12-31-2009
20090050930Light-emitting device and the manufacturing method thereof - This invention provides an optoelectronic semiconductor device having a rough surface and the manufacturing method thereof. The optoelectronic semiconductor device comprises a semiconductor stack having a rough surface and an electrode layer overlaying the semiconductor stack. The rough surface comprises a first region having a first topography and a second region having a second topography. The method comprises the steps of forming a semiconductor stack on a substrate, forming an electrode layer on the semiconductor stack, thermal treating the semiconductor stack, and wet etching the surface of the semiconductor stack to form a rough surface.02-26-2009
20090085055Method for Growing an Epitaxial Layer - A method for growing an epitaxial layer and devices obtained by that method are disclosed. The method starts by providing a growth substrate having a top surface characterized by a first thermal expansion coefficient (TEC). A mask having a plurality of openings therein is formed on the top surface of the growth substrate. The top surface of the growth substrate is exposed through the openings in the mask. A first epitaxial layer of a first material is grown on the exposed top surface of the openings to form discrete islands of the first material. The discrete islands from adjacent openings in the mask do not contact one another. The first epitaxial layer is characterized by a second TEC. The first and second TECs differ by more than 5 percent. The mask includes a mask material on which the first material will not nucleate.04-02-2009
20090101935NITRIDE SEMICONDUCTOR AND METHOD FOR MANUFACTURING SAME - A nitride semiconductor includes: a substrate having a major surface including a first crystal polarity surface and a second crystal polarity surface different from the first crystal polarity surface; and a single polarity layer provided above the major surface and having a single crystal polarity.04-23-2009
20120104455OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME - An optoelectronic device includes a substrate and a first transition stack formed on the substrate including at least a first transition layer formed on the substrate and having at least one hollow component formed inside the first transition layer, and a second transition layer wherein the second transition layer is an unintentional doped layer or an undoped layer formed on the first transition layer.05-03-2012
20090140286Production Method of Group III Nitride Semiconductor Element - An object of the present invention is to provide a production method of a Group III nitride semiconductor element having an excellent electrostatic discharge property and enhanced reliability.06-04-2009
20090200573Light emitting element and manufacturing method thereof - In a laser chip 08-13-2009
20080283866Nitride semiconductor light-emitting device and method for producing same - In a method for producing a nitride semiconductor light-emitting device according to the present invention, first, a nitride semiconductor substrate having groove portions formed is prepared. An underlying layer comprising nitride semiconductor is formed on the nitride semiconductor substrate including the side walls of the groove portions, in such a manner that the underlying layer has a crystal surface in each of the groove portions and the crystal surface is tilted at an angle of from 53.5° to 63.4° with respect to the surface of the substrate. Over the underlying layer, a light-emitting-device structure composed of a lower cladding layer containing Al, an active layer, and an upper cladding layer containing Al is formed. According to the present invention, thickness nonuniformity and lack of surface flatness, which occur when accumulating a layer with light-emitting-device structure of nitride semiconductor over the nitride semiconductor substrate, are alleviated while inhibiting occurrence of cracking.11-20-2008
20130214325Method for Manufacturing Optical Element - A method for manufacturing an optical element includes a step wherein an aluminum nitride single crystal layer is formed on an aluminum nitride seed substrate having an aluminum nitride single crystal surface as the topmost surface. A laminated body for an optical element is manufactured by forming an optical element layer on the aluminum nitride single crystal layer, and the aluminum nitride seed substrate is removed from the laminated body. An optical element having, as a substrate, an aluminum nitride single crystal layer having a high ultraviolet transmittance and a low dislocation density is provided.08-22-2013
20090206359LIGHT-EMITTING DIODE AND METHOD FOR FABRICATION THEREOF - A light-emitting diode (08-20-2009
20090212319GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE - An object of the present invention is to provide a gallium nitride-based compound semiconductor light emitting device having excellent light extraction efficiency and a high emission output in which a planar shape is a rectangular shape with vertical and longitudinal sides each having a different length.08-27-2009
20090095976NITRIDE-BASED LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided are a nitride-based light-emitting device including a transparent electrode made of a transparent conductive oxide having a higher work function than indium tin oxide and a method of manufacturing the same. The nitride-based light-emitting device has a sequentially stacked structure of a substrate, an n-type clad layer, an active layer, a p-type clad layer, and an ohmic contact layer. The ohmic contact layer is formed as a film made of a transparent conductive oxide having a higher work function than indium tin oxide or as a film made of the transparent conductive oxide doped with a metal dopant. Therefore, ohmic contact characteristics with the p-type clad layer are enhanced, thereby ensuring excellent current-voltage characteristics. Furthermore, the high light transmittance of the transparent electrode can increase the emission efficiency of the device.04-16-2009
20100148212METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR CRYSTAL, GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE, AND SEMICONDUCTOR LIGHT- EMITTING DEVICE - The method for producing a group III nitride semiconductor crystal of the invention comprises a step of preparing a seed crystal having a non-polar plane followed by growing a group III nitride semiconductor from the non-polar plane in a vapor phase, wherein the growing step includes growing the group III nitride semiconductor so as to extend in the +C-axis direction of the seed crystal. A group III-V nitride semiconductor crystal having high quality and a large-area non-polar plane can be obtained by the method.06-17-2010
20110101412Light-emitting semiconductor device using group III nitrogen compound - A method of producing a light-emitting semiconductor device of a group III nitride compound includes forming an N-layer of an N-type conduction, the N-layer comprising gallium nitride, forming a high carrier concentration N05-05-2011
20110101415SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Provided is a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises: a first conductive type semiconductor layer; an active layer on the first conductive type semiconductor layer; an undoped semiconductor layer on the active layer; a first delta-doped layer on the undoped semiconductor layer; and a second conductive type semiconductor layer on the first delta-doped layer.05-05-2011
20100193833Nitride-Based Semiconductor Device, Light Apparatus, and Method of Manufacturing Nitride-Based Semiconductor Device - A nitride-based semiconductor device includes a substrate made of a nitride-based semiconductor, a device layer formed on the substrate, and an electrode formed on a surface of the substrate opposite to the device layer. The substrate includes a first surface having a nonpolar plane or a semipolar plane, a second surface opposite to the first surface, a defect concentration region extending in a direction inclined with respect to a normal direction of the first surface from the first surface toward the second surface and penetrating to the second surface and a current path region separated from other region of the substrate by the defect concentration region employed as a boundary, the defect concentration region is not exposed on the first surface, and the electrode is formed on the second surface in the current path region.08-05-2010
20100187564Method and Apparatus for Providing a Patterned Electrically Conductive and Optically Transparent or Semi-Transparent Layer over a Lighting Semiconductor Device - A light emitting diode (“LED”) using an electrical conductive and optical transparent or semi-transparent layer to improve overall light output is disclosed. The device includes a first conductive layer, an active layer, a second conductive layer, an electrical conductive and optical transparent or semi-transparent layer, and electrodes. In one embodiment, the electrical conductive and optical transparent or semi-transparent layer has a first surface and a second surface, wherein the first surface is overlain the second conductive layer. The second surface includes a pattern which contains thick regions and thin regions for facilitating light passage.07-29-2010
20100181595GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - The present invention aims to enhance the light extraction efficiency of the Group III nitride semiconductor light-emitting device.07-22-2010
20100187565SEMICONDUCTOR LIGHT EMITTING ELEMENT AND WAFER - There are provided a semiconductor light emitting element which allows an improvement in light extraction efficiency without increasing the number of fabrication steps, and a wafer. In a semiconductor light emitting element 07-29-2010
20100176418GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE - An object of the present invention is to provide a gallium nitride-based compound semiconductor light emitting device having superior light extraction efficiency and light distribution uniformity.07-15-2010
20100155772Semiconductor light emitting device and method for manufacturing the same - Provided is a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises: a first conductive type semiconductor layer; an active layer on the first conductive type semiconductor layer; an undoped semiconductor layer on the active layer; a first delta-doped layer on the undoped semiconductor layer; and a second conductive type semiconductor layer on the first delta-doped layer.06-24-2010
20100237384LIGHT DEVICE AND FABRICATION METHOD THEREOF - The present invention discloses a light device and a fabrication method thereof. An object of the present invention is to provide the light device and the fabrication method thereof an electric/thermal/structural stability is obtained, and a P-type electrode and an N-type electrode can be simultaneously formed. In order to achieve the above object, the inventive light device includes: a GaN-based layer; a high concentration GaN-based layer formed on the GaN-based layer; a first metal-Ga compound layer formed on the high concentration GaN-based layer; a first metal layer formed on the first metal-Ga compound layer; a third metal-Al compound layer formed on the first metal layer; and a conductive oxidation preventive layer formed on the third metal-Al compound layer.09-23-2010
20110101414LIGHT EMITTING DIODES WITH ZINC OXIDE CURRENT SPREADING AND LIGHT EXTRACTION LAYERS DEPOSITED FROM LOW TEMPERATURE AQUEOUS SOLUTION - A method for fabricating a Light Emitting Diode (LED) with increased light extraction efficiency, comprising providing a III-Nitride based LED structure comprising a light emitting active layer between a p-type layer and an n-type layer; growing a Zinc Oxide (ZnO) layer epitaxially on the p-type layer by submerging a surface of the p-type layer in a low temperature aqueous solution, wherein the ZnO layer is a transparent current spreading layer; and depositing a p-type contact on the ZnO layer. The increase in efficiency may be more than 93% with very little or no increase in cost.05-05-2011
20120126283HIGH POWER, HIGH EFFICIENCY AND LOW EFFICIENCY DROOP III-NITRIDE LIGHT-EMITTING DIODES ON SEMIPOLAR SUBSTRATES - A III-nitride light emitting diode grown on a semipolar {20-2-1} plane of a substrate and characterized by high power, high efficiency and low efficiency droop.05-24-2012
20100252859SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME - Provided are a semiconductor light emitting device and a method of fabricating the same. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The first conductive type semiconductor layer comprises an insulation layers comprising a predetermined interval and a voids between the insulation layers. The active layer is disposed on the first conductive type semiconductor layer. The second conductive type semiconductor layer is disposed on the active layer.10-07-2010
20090020781NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING SAME - An exemplary nitride-based semiconductor light emitting device includes a substrate, a nitride-based multi-layered structure epitaxially formed on the substrate, a first-type electrode and a second-type electrode. The multi-layered structure includes a first-type layer, an active layer, and a second-type layer. The multi-layered structure has a developed mesa structure which at least includes the second-type layer and the active layer and whereby the first-type layer is partially exposed to form an exposed portion. The mesa structure has a roughened top surface and a plurality of roughened side surfaces adjoining the top surface. A crystal growth orientation of the multi-layered structure intersects with <0001 > crystal orientation thereof. The first-type electrode and the second-type electrode respectively come into ohmic contact with the first-type layer and the second-type layer.01-22-2009
20110057229Organic Light Emissive Device - A method of manufacturing an organic light emissive device comprising: depositing an organic light emissive layer over an anode and depositing a cathode over the organic light emissive layer, wherein the cathode comprises a trilayer structure formed by: depositing a first layer comprising an electron injecting material; depositing a second layer over the first layer, the second layer comprising a metallic material having a workfunction greater than 3.5 eV; and depositing a third layer over the second layer, the third layer comprising a metallic material having a workfunction greater than 3.5 eV.03-10-2011
20090114944Method for Fine Processing of Substrate, Method for Fabrication of Substrate, and Light Emitting Device - The present invention provides a method for fine processing of a substrate, a method for fabrication of a substrate, and a light emitting device. In the method for fine processing of a substrate, after removing a single particle layer from the substrate having the single particle layer, a hole having an inner diameter smaller than a diameter of a particle and centering on a position on the substrate where each particle constructing the single particle layer has been placed is formed by etching. The method for fabrication of a substrateincludesthefollowingsteps (I) to (V) inthisorder: 05-07-2009
20080308836Nitride Semiconductor Device and Method for Growing Nitride Semiconductor Crystal Layer - There are provided a nitride semiconductor device such as a nitride semiconductor light emitting device, a transistor device or the like, obtained by forming a buffer layer of a single crystal of the nitride semiconductor, in which both a-axis and c-axis are aligned, directly on a substrate lattice-mismatched with the nitride semiconductor without forming an amorphous low temperature buffer layer, and growing epitaxially the nitride semiconductor layer on the buffer layer of the single crystal. In this device, a single crystal buffer layer (12-18-2008
20090114943Nitride semiconductor free-standing substrateand device using the same - A nitride semiconductor free-standing substrate includes a surface inclined in a range of 0.03° to 1.0° from a C-plane, and an off-orientation that an angle defined between a C-axis and a tangent at each point on a whole surface of the substrate becomes maximum is displaced in a range of 0.5° to 16° from a particular M-axis orientation of six-fold symmetry M-axis orientations. The substrate does not include a region of −0.5°<φ<+0.5° on the surface, where φ represents a displacement angle of the off-orientation on a surface of the substrate from the particular M-axis orientation.05-07-2009
20090072267Group III nitride-based compound semiconductor light-emitting device - Provided is a GaN-based semiconductor light-emitting device which does not require an external constant-current circuit. The light-emitting device of the present invention includes a sapphire substrate; an AlN buffer layer formed on the substrate; and an HEMT structure formed on the buffer layer, the HEMT structure including a GaN layer and an Al03-19-2009
20080272391SILICON COMPATIBLE INTEGRATED LIGHT COMMUNICATOR - Various methods and devices are implemented using efficient silicon compatible integrated light communicators. According to one embodiment of the present invention, a semiconductor device is implemented for communicating light, such as by detecting, modulating or emitting light. The device has a silicon-seeding location, an insulator layer and a second layer on the insulator layer. The second layer includes a silicon-on-insulator region and an active region surrounded by the silicon-on-insulator region and connected to the silicon-seeding location. The active region includes a single-crystalline germanium-based material that extends from the silicon-seeding location through a passageway with a cross-sectional area that is sufficiently small to mitigate crystalline growth defects. The single-crystalline germanium-based material is physically coupled to the insulating layer such that the insulating layer introduces a high tensile strain to the germanium-based material, and a more specific aspect is directed to an SOI implementation.11-06-2008
20080272392Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same - A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d11-06-2008
20090108286Optoelectronic device - An optoelectronic device such as a light-emitting diode chip is disclosed. It includes a substrate, a multi-layer epitaxial structure, a first metal electrode layer, a second metal electrode layer, a first bonding pad and a second bonding pad. The multi-layer epitaxial structure on the transparent substrate comprises a semiconductor layer of a first conductive type, an active layer, and a semiconductor layer of a second conductive type. The first bonding pad and the second bonding pad are on the same level. Furthermore, the first metal electrode layer can be patterned so the current is spread to the light-emitting diode chip uniformly.04-30-2009
20090108285Rod-Shaped Semiconductor Device - A rod-shaped semiconductor device having a light-receiving or light-emitting function is equipped with a rod-shaped substrate made of p-type or n-type semiconductor crystal, a separate conductive layer which is formed on a part of the surface of the substrate excluding a band-shaped part parallel to the axis of the substrate and has a different conduction type from the conduction type of the substrate, a pn-junction formed with the substrate and separate conductive layer, a band-shaped first electrode which is formed on the surface of the band-shaped part on the substrate and ohmic-connected to the substrate, and a band-shaped second electrode which is formed on the opposite side of the first electrode across the shaft of said substrate and ohmic-connected to the separate conductive layer.04-30-2009
20100301382Light-Emitting Element, Light-Emitting Device, Lighting Device, and Electronic Appliance - A light-emitting element whose lifetime is improved. In addition, a light-emitting device, a lighting device, and an electronic appliance in which the light-emitting element is used. A light-emitting element including, between an anode and a cathode, a hole-transport layer and a layer containing a light-emitting substance provided to be in contact with a cathode side surface of the hole-transport layer, in which the hole-transport layer includes a first organic compound and an anti-reduction substance, and in which the layer containing a light-emitting substance includes a second organic compound and a light-emitting substance and has at least an electron-transport property is provided. In addition, a light-emitting device including the light-emitting element, or a lighting device or an electronic appliance including the light-emitting device is provided.12-02-2010
20100301381NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF - Provided are a nitride semiconductor light emitting element, including an n-type nitride semiconductor substrate including a dislocation bundle concentration region, and a nitride semiconductor stacked body having an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer in this order on the n-type nitride semiconductor substrate, the nitride semiconductor light emitting element having a dielectric region in a region of the nitride semiconductor stacked body corresponding to the dislocation bundle concentration region, an electrode for p-type provided to be in contact with a portion of the p-type nitride semiconductor layer and a portion of the dielectric region, and an electrode for n-type provided on a side of the n-type nitride semiconductor substrate opposite to a side on which the nitride semiconductor stacked body is provided, and a manufacturing method thereof.12-02-2010
20100301380LIGHT-EMITTING DIODE AND MANUFACTURING METHOD THEREOF - A method for manufacturing a light-emitting diode includes the steps of: growing a light-emitting diode structure-forming semiconductor layer of a compound semiconductor having a zincblende crystal structure on a first substrate formed of a compound semiconductor having a zincblende crystal structure and that has a principal surface tilted in a [110] direction with respect to a (001) plane; bonding the first substrate to a second substrate on the side of the semiconductor layer; removing the first substrate so as to expose the semiconductor layer; forming an etching mask on the exposed surface of the semiconductor layer in a rectangular planar shape so that a longer side extends in a [110] or [−1-10] direction, and that a shorter side extends in a [−110] or [1-10] direction; and patterning the semiconductor layer by wet etching using the etching mask.12-02-2010
20110127571MIXED SOURCE GROWTH APPARATUS AND METHOD OF FABRICATING III-NITRIDE ULTRAVIOLET EMITTERS - A device for forming a Group III-V semiconductor on a substrate. The device has a primary chamber comprising a substrate and a heat source for heating the substrate to a first temperature. A secondary chamber comprises a metal source and a second heat source for heating the secondary chamber to a second temperature. A first source is provided which is capable of providing HCl to the secondary chamber wherein the HCl and the metal form metal chloride. A metal-organic source is provided. A metal chloride source is provided which comprises a metal chloride. At least one of the metal chloride, the metal-organic and the second metal chloride react with the nitrogen containing compound to form a Group III-V semiconductor on the substrate.06-02-2011
20100308369Light emitting device including semiconductor nanocrystals - A light emitting device can have a layered structure and include a plurality of semiconductor nanocrystals. The layers of the device can be covalently bonded to each other. The device can include continuous chain of covalent bonds extending from the first electrode to the second electrode.12-09-2010
20110001163METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP - A method for producing a group III nitride semiconductor light-emitting device including: an intermediate layer formation step in which an intermediate layer containing group III nitride is formed on a substrate by sputtering, and a laminate semiconductor formation step in which an n-type semiconductor layer having a base layer, a light-emitting layer, and a p-type semiconductor layer are laminated on the intermediate layer in this order, wherein the method includes a pretreatment step in which the intermediate layer is treated using plasma between the intermediate layer formation step and the laminate semiconductor formation step, and a formation step for the base layer which is included in the laminate semiconductor formation step is a step for laminating the base layer by sputtering.01-06-2011
20110108881METHOD FOR MANUFACTURING LIGHT-EMITTING DIODE - A semiconductor structure is first provided. The semiconductor structure includes a sapphire substrate and a semiconductor light-emitting layer. A first surface of the semiconductor light-emitting layer covers and contacts with the sapphire substrate. Then, the semiconductor structure is fixed on a supported base. The sapphire substrate is further removed from the semiconductor structure. After that, a high heat-conductive layer is formed on the first surface of the semiconductor light-emitting layer to form a light-emitting diode. Finally, the supported base is separated from the light-emitting diode.05-12-2011
20110031528Semiconductor light emitting device - A semiconductor light emitting device with which a driving voltage is able to be kept low is provided. The semiconductor light emitting device includes: an n-type cladding layer; an active layer; a p-type cladding layer containing AlGaInP; an intermediate layer; and a contact layer containing GaP in this order, wherein the intermediate layer contains Ga02-10-2011
20110042712TYPE OF GAPLESS SEMICONDUCTOR MATERIAL - The present disclosure provides a new type of gapless semiconductor material having electronic properties that can be characterized by an electronic band structure which comprises valence and conduction band portions VB02-24-2011
20110042713NITRIDE SEMI-CONDUCTIVE LIGHT EMITTING DEVICE - The nitride semi-conductive light emitting layer in this invention comprises a single crystal substrate 02-24-2011
20110114995Copper Blend I-VII Compound Semiconductor Light-Emitting Devices - Implementations and techniques for semiconductor light-emitting devices including one or more copper blend I-VII compound semiconductor material barrier layers are generally disclosed.05-19-2011
20110121358P-TYPE LAYER FOR A III-NITRIDE LIGHT EMITTING DEVICE - A semiconductor structure includes a light emitting region, a p-type region disposed on a first side of the light emitting region, and an n-type region disposed on a second side of the light emitting region. At least 10% of a thickness of the semiconductor structure on the first side of the light emitting region comprises indium. Some examples of such a semiconductor light emitting device may be formed by growing an n-type region, growing a p-type region, and growing a light emitting layer disposed between the n-type region and the p-type region. The difference in temperature between the growth temperature of a part of the n-type region and the growth temperature of a part of the p-type region is at least 140° C.05-26-2011
20110084307METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP - One object of the present invention is to provide a method for producing a group III nitride semiconductor light-emitting device which has excellent productivity and produce a group III nitride semiconductor light-emitting device and a lamp, a method for producing a group III nitride semiconductor light-emitting device, in which a buffer layer (04-14-2011
20090032835III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - The present disclosure provides a III-nitride semiconductor light emitting device, including: a plurality of III-nitride semiconductor layers including an active layer for generating light by recombination of electrons and holes; and a substrate used to grow the plurality of III-nitride semiconductor layers, and including a protrusion with two opposite sides rounded.02-05-2009
20090242929LIGHT EMITTING DIODES WITH PATTERNED CURRENT BLOCKING METAL CONTACT - A light emitting diode including an epitaxial layer structure, a first electrode formed on the epitaxial layer structure, and a second electrode formed on the epitaxial layer structure. The first electrode has a pattern and the second electrode has a portion aligned with the pattern of the first electrode. The portion of the second electrode forms a non-ohmic contact with the epitaxial layer structure.10-01-2009
20090315068LIGHT EMITTING DEVICE - A light emitting device includes: a light emitting element; a first lead including a die pad portion at its one end portion, the light emitting element being bonded to the die pad portion; a second lead with its one end portion being opposed to the one end portion of the first lead; and a resin molded body including a recess with at least part of the die pad portion being exposed to the bottom thereof so that emission light from the light emitting element can be emitted upward, a lower surface with at least part of the lower surface of the first lead and at least part of the lower surface of the second lead being exposed thereto, and a lateral surface with at least part of the lateral surface of the die pad portion being exposed thereto, the resin molded body embedding the first lead and the second lead so that the other end portion of the first lead and the other end portion of the second lead are projected in directions opposite to each other. The at least part of the lateral surface of the die pad portion which is exposed is located on a first plane which is generally coplanar with the lateral surface of the other end portion of the first lead and the lateral surface of the other end portion of the second lead.12-24-2009
20090218593Nitride semiconductor light emitting device and method of frabicating nitride semiconductor laser device - There is provided a nitride semiconductor light emitting device having a light emitting portion coated with a coating film, the light emitting portion being formed of a nitride semiconductor, the coating film in contact with the light emitting portion being formed of an oxynitride. There is also provided a method of fabricating a nitride semiconductor laser device having a cavity with a facet coated with a coating film, including the steps of: providing cleavage to form the facet of the cavity; and coating the facet of the cavity with a coating film formed of an oxynitride.09-03-2009
20100012971GAN LED ELEMENT AND LIGHT EMITTING DEVICE - A first conductive film 01-21-2010
20100059789NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR FABRICATING THEREOF - Disclosed is a nitride semiconductor light-emitting device, including a substrate, a nitride semiconductor layer including a first conductive layer, an active layer and a second conductive layer located on the substrate, a first electrode formed on the first conductive layer, and a second electrode formed on the second conductive layer, wherein a pattern having one or more protrusions formed at a predetermined interval and concave portions resulting from depression of upper surfaces of the protrusions to a predetermined depth is formed on the surface of the substrate which abuts with the first conductive layer. A method of fabricating the nitride semiconductor light-emitting device is also provided. When the substrate having a pattern with protrusions and concave portions is used, higher light extraction efficiency can be obtained.03-11-2010
20090032834HIGHLY EFFICIENT LED WITH MICROCOLUMN ARRAY EMITTING SURFACE - A highly efficient light emitting diode with microcolumn array emitting surface, wherein the microcolumn array is prepared on the emitting surface of the light emitting diode, and can be formed with a two-dimensional periodic or non-periodic structure, the length and height of each microcolumn are in the same order of magnitude as, more specifically are from half to a few of, the wavelength of the emitting light. This invention utilizes a strong diffraction effect of the microcolumn array to increase the luminous efficiency of the light emitting diode. The distribution of light emitting is uniform. Compared with the conventional two-dimensional photonic crystal light emitting diode, the manufacturing process of this invention is simple, and the manufacturing cost is low. Compared with the conventional porous surface light emitting diode, the luminous efficiency of the light emitting diode according to this invention is high.02-05-2009
20100059790NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A nitride-based semiconductor device includes an n-type nitride-based semiconductor layer, and an n-side electrode having a first metal layer made of Al, formed on a surface of the n-type nitride-based semiconductor layer and a second metal layer made of Hf formed so as to cover a surface of the first metal layer on a side opposite to the n-type nitride-based semiconductor layer.03-11-2010
20110079817LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING DEVICE - An object is to provide a highly functional and reliable light-emitting element and light-emitting device with lower power consumption and high emission efficiency. The light-emitting element has an EL layer that has a stacked structure including a light-emitting element containing an organic compound and a functional layer having separate functions between a pair of electrode layers. In the light-emitting element including the functional layer and the light-emitting element containing an organic compound, a mixed-valence compound is contained in the functional layers. When an element in a compound has a plurality of valences, this element is in a state that is referred to as a mixed-valence state and this compound is referred to as a mixed-valence compound.04-07-2011
20110101413SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is a method of manufacturing a semiconductor device. In the method, a growth substrate provided with a single crystal semiconductor thin layer, a support substrate, and a temporary substrate are prepared, the growth substrate, the support substrate, and the temporary substrate are bonded to one another with the support substrate therebetween through functional wafer coupling layers, the growth substrate is lifted off from the single crystal semiconductor thin layer, and the temporary substrate is lifted off from the support substrate.05-05-2011
20090026488NITRIDE SEMICONDUCTOR MATERIAL AND PRODUCTION PROCESS OF NITRIDE SEMICONDUCTOR CRYSTAL - A nitride semiconductor material comprising a semiconductor or dielectric substrate having thereon a first nitride semiconductor layer group, wherein the surface of the first nitride semiconductor layer group has an RMS of 5 nm or less, a variation of X-ray half-width within ±30%, a light reflectance of the surface of 15% or more, and a variation thereof of ±10% or less, and the thickness of said first nitride semiconductor layer group is 25 μm or more. This nitride semiconductor material is excellent in uniformity and stability, assured of a low production cost, and useful as a substrate for a nitride semiconductor-type device.01-29-2009
20100301383Light-Emitting Element, Light-Emitting Device, and Method for Manufacturing the Same - An object is to provide a light-emitting element with high emission efficiency. Another object is to provide a light-emitting element with a long lifetime and high reliability. Another object is to provide a light-emitting element driven at low voltage. A first light-emitting layer whose one surface is in contact with a hole-transport layer, and a second light-emitting layer which is in contact with the other surface of the first light-emitting layer and includes a bipolar host material and a light-emitting substance are provided, where the hole-transport property of the first light-emitting layer is higher than that of the second light-emitting layer. A recombination region of holes and electrons is preferably provided in the light-emitting layer. The hole-transport layer preferably includes an anti-reducing substance.12-02-2010
20090001409Semiconductor Light Emitting Device And Illuminating Device Using It - The semiconductor light emitting device of the present invention comprises an n-type nitride semiconductor layer 01-01-2009
20090250719NITRIDE COMPOUND SEMICONDUCTOR DEVICE AND SEMICONDUCTOR LASER - A nitride semiconductor device includes a semiconductor substrate composed of gallium nitride, and a stack which is provided on the semiconductor substrate and includes at least one nitride semiconductor layer containing aluminum, wherein substrate thickness T of the semiconductor substrate and a sum S of products of proportions of aluminum and thicknesses of all of the nitride semiconductor. layer containing aluminum among the stack satisfy a relationship of: T/860<=S<=T/530.10-08-2009
20090179221SEMICONDUCTOR LIGHT EMITTING DEVICE - Provided is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive type clad layer having a composition ratio of aluminum increased at a predetermined rate, an active layer on the first conductive type clad layer, and a second conductive type semiconductor layer on the active layer.07-16-2009
20080303054APPARATUS FOR PRODUCING GROUP-III NITRIDE SEMICONDUCTOR LAYER, METHOD OF PRODUCING GROUP-III NITRIDE SEMICONDUCTOR LAYER, METHOD OF PRODUCING GROUP-III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, GROUP-III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE THEREOF, AND LAMP THEREOF - An apparatus for producing a group-III nitride semiconductor layer which forms a group-III nitride semiconductor layer on a substrate by a sputtering method, the apparatus including: a first plasma-generating region where a target containing a group-III element is disposed and the target is sputtered to generate material particles formed of a material contained in the target; and a second plasma generating region where the substrate is disposed and nitrogen-containing plasma is generated. The first plasma-generating region and the second plasma-generating region are provided inside a chamber, and the first plasma-generating region and the second plasma-generating region are separated by a shielding wall which has an opening part from which the material particles are supplied onto the substrate. Also disclosed are a method of producing a group-III nitride semiconductor layer, a method of producing a group-III nitride semiconductor light-emitting device, and a lamp thereof.12-11-2008
20090114941Semiconductor device and method of fabricating the same and method of forming nitride based semiconductor layer - A GaN layer is grown on a sapphire substrate, an SiO05-07-2009
20110254048GROUP III NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE - An object of the present invention is to provide a Group III nitride semiconductor epitaxial substrate, i.e., an Al10-20-2011
20080251809Light-Emitting Diode - Light-emitting diode (LED) comprising a translucent substrate of α-Al10-16-2008
20120199873METAL SUBSTRATE FOR LIGHT-EMITTING DIODE, LIGHT-EMITTING DIODE, AND METHOD FOR MANUFACTURING LIGHT-EMITTING DIODE - The object of the present invention is to provide a metal substrate for a light-emitting diode having excellent chemical resistance, a light-emitting diode, and a method for manufacturing the light-emitting diode, and the present invention provides a metal substrate for a light-emitting diode including a metal substrate, a compound semiconductor layer having a light-emitting portion, which is joined over the metal substrate via a junction layer, wherein the metal substrate for a light-emitting diode includes a metal plate and a metal protective film which covers at least an upper surface and a lower surface of the metal plate.08-09-2012
20110018027Top-emitting light emitting diodes and methods of manufacturing thereof - Provided are a top-emitting nitride based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising an interface modification layer formed on the p-type clad layer and a transparent conductive thin film layer made up of a transparent conductive material formed on the interface modification layer; and a process for preparing the same. In accordance with the top-emitting nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current-voltage properties.01-27-2011
20100123168NITRIDE CRYSTAL, NITRIDE CRYSTAL SUBSTRATE, EPILAYER-CONTAINING NITRIDE CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d05-20-2010
20100230714METHOD FOR PRODUCING GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE, GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE, AND LAMP USING THE SAME - A method for producing a gallium nitride based compound semiconductor light emitting device that is excellent in terms of light emission efficiency and is also capable of operating at a low driving voltage, a gallium nitride based compound semiconductor light emitting device, and a lamp using the device are provided, and the method for producing a gallium nitride based compound semiconductor light emitting device includes a first crystal growth step in which an n-type semiconductor layer 09-16-2010
20110260211METHOD OF MANUFACTURING A LIGHT EMITTING DIODE - A method of manufacturing a light emitting diode is disclosed. In one aspect, the light emitting diode has a carrier, an active layer structure of III-nitride type materials, and a photonic crystal structure of III-nitride type materials. The active layer structure includes a first active layer with an n-type doped layer and a p-type doped layer and suitably a quantum well structure. The photonic crystal structure includes periodically distributed trenches or periodically distributed pillars spaced by one or more trenches. The photonic crystal structure includes an overgrowth layer within which a diameter of a trench gradually increases, and a directional photonic crystal layer in which the diameter of a trench is substantially constant. The diode may be formed in a method wherein the directional photonic crystal layer is provided on a three-dimensional pattern that exposes selected areas of the first surface of the substrate.10-27-2011
20110260210GAN-BASED LEDS ON SILICON SUBSTRATES WITH MONOLITHICALLY INTEGRATED ZENER DIODES - Monolithically integrated GaN LEDs with silicon-based ESD protection diodes. Hybrid MOCVD or HVPE epitaxial systems may be utilized for in-situ epitaxially growth of doped silicon containing films to form both the silicon-based ESD protection diode material stacks as well as a silicon containing transition layer prior to growth of a GaN-based LED material stack. The silicon-based ESD protection diodes may be interconnected with layers of a GaN LED material stack to form Zener diodes connected with the GaN LEDs.10-27-2011
20100193834NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor light emitting device having a light emitting structure including at least one first conductive GaN based semiconductor layer, an active layer above the at least one first conductive GaN based semiconductor layer, and at least one second conductive GaN based semiconductor layer above the active layer, a plurality of patterns disposed from the at least one second conductive GaN based semiconductor layer through a portion of the at least one first conductive GaN based semiconductor layer, and an insulating member on the plurality of patterns. The plurality of patterns include a lower part contacting with the light emitting structure and a upper part contacting with the light emitting structure. A first base angle of the lower part is different from the second base angle of the upper part.08-05-2010
20110147792Heterocyclic Compound, Light-Emitting Element, Light-Emitting Device, Electronic Device and Lighting Device - Objects of the present invention are to provide the following: a novel heterocyclic compound which can be used as a material in which a light-emitting substance of a light-emitting layer in a light-emitting element is dispersed; a novel heterocyclic compound having a high electron-transport property; a light-emitting element having high current efficiency; and a light-emitting device, an electronic device and a lighting device each having reduced power consumption. Provided are a heterocyclic compound represented by General Formula (G1-1) or (G1-2) below, and a light-emitting element, a light-emitting device, an electronic device and a lighting device each including the heterocyclic compound. Such use of the heterocyclic compound represented by General Formula (G1-1) or (G1-2) makes it possible to provide a light-emitting element having high current efficiency, and a light-emitting device, an electronic device and a lighting device each having reduced power consumption.06-23-2011
20110215370SEMICONDUCTOR LIGHT-EMITTING DEVICE - According to one embodiment, a semiconductor light-emitting device having high light extraction efficiency is provided. The semiconductor light-emitting device includes a light transmissive substrate; a nitride semiconductor layer of a first conduction type formed on or above a top face side of the light transmissive substrate; an active layer made of nitride semiconductor formed on a top face of the nitride semiconductor layer of the first conduction type; a nitride semiconductor layer of a second conduction type formed on a top face of the active layer; a dielectric layer formed on a bottom face of the light transmissive substrate and having a refractive index lower than that of the light transmissive substrate; and a metal layer formed on a bottom face of the dielectric layer. And an interface between the light transmissive substrate and the dielectric layer is a uneven face, and an interface between the dielectric layer and the metal layer is a flat face.09-08-2011
20100019273METHOD FOR PRODUCING STRUCTURED SUBSTRATE, STRUCTURED SUBSTRATE, METHOD FOR PRODUCING SEMICONDUCTOR LIGHT EMITTING DEVICE, SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, METHOD FOR PRODUCING DEVICE, AND DEVICE - A semiconductor light emitting device or a semiconductor device produced using a nitride type III-V group compound semiconductor substrate on which a plurality of second regions made of a crystal having a second average dislocation density are regularly arranged in a first region made of a crystal having a first average dislocation density so as to produce the structured substrate, the second average dislocation density being greater than the first average dislocation density, a light emitting region of the semiconductor light emitting device or an active region of the semiconductor device is formed in such a manner that it does not pass through any one of the second regions.01-28-2010
20100019272LIGHT EMITTING DIODE - A light emitting diode having a substrate, an electron injection layer, an active layer, a hole injection layer, a first pad electrically connected to the hole injection layer, and a second pad electrically connected to the electron injection layer. The hole injection layer includes an activated region and a patterned non-activated region. The first pad is disposed upon the non-activated region and the first pad and the non-activated region are overlapping in the vertical direction.01-28-2010
20090173964METHOD OF FORMING A CARBON NANOTUBE-BASED CONTACT TO SEMICONDUCTOR - Manufacturers encounter limitations in forming low resistance ohmic electrical contact to semiconductor material P-type Gallium Nitride (p-GaN), commonly used in photonic applications, such that the contact is highly transparent to the light emission of the device. Carbon nanotubes (CNTs) can address this problem due to their combined metallic and semiconducting characteristics in conjunction with the fact that a fabric of CNTs has high optical transparency. The physical structure of the contact scheme is broken down into three components, a) the GaN, b) an interface material and c) the metallic conductor. The role of the interface material is to make suitable contact to both the GaN and the metal so that the GaN, in turn, will make good electrical contact to the metallic conductor that interfaces the device to external circuitry. A method of fabricating contact to GaN using CNTs and metal while maintaining protection of the GaN surface is provided.07-09-2009
20110147791GROWTH OF COINCIDENT SITE LATTICE MATCHED SEMICONDUCTOR LAYERS AND DEVICES ON CRYSTALLINE SUBSTRATES - Methods of fabricating a semiconductor layer or device and said devices are disclosed. The methods include but are not limited to providing a substrate having a crystalline surface with a known lattice parameter (a). The method further includes growing a crystalline semiconductor layer on the crystalline substrate surface by coincident site lattice matched epitaxy, without any buffer layer between the crystalline semiconductor layer and the crystalline surface of the substrate. The crystalline semiconductor layer will be prepared to have a lattice parameter (a′) that is related to the substrate lattice parameter (a). The lattice parameter (a′) maybe related to the lattice parameter (a) by a scaling factor derived from a geometric relationship between the respective crystal lattices.06-23-2011
20120037952LIGHT EMITTING DIODE AND FABRICATING METHOD THEREOF - A light emitting diode and a fabricating method thereof are provided. A first-type semiconductor layer, a light emitting layer and a second-type semiconductor layer with a first surface are sequentially formed a substrate. Next, the first surface is treated during a surface treatment process to form a current-blocking region which extends from the first surface to the light emitting layer to a depth of 1000 angstroms. Afterward, a first electrode is formed above the current-blocking region of the second-type semiconductor layer, and a second electrode is formed to electrically contact to the first-type semiconductor layer. Since the current-blocking region is formed with a determined depth within the second-type semiconductor layer, the light extraction efficiency of the light emitting diode may be increased.02-16-2012
20130009203SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF - A semiconductor light-emitting element includes: a substrate; and a nitride semiconductor multilayer film provided on an upper surface of the substrate and including an active layer. A recess, a stepped portion, or a protruding portion is formed in an active layer or a layer that contacts a lower surface of the active layer. A ridge stripe, which has a front end facet and a rear end facet and serves as an optical waveguide, is formed in an upper part of the nitride semiconductor multilayer film. The distance from a lateral center of the ridge stripe to a lateral center of the recess, the stepped portion, or the protruding portion changes continuously or in stages from the front end facet toward the rear end facet. Bandgap energy of the active layer changes continuously or in stages from the front end facet toward the rear end facet.01-10-2013
20100123165SEMICONDUCTOR MATERIAL, METHOD OF PRODUCING SEMICONDUCTOR MATERIAL, LIGHT EMITTING DEVICE AND LIGHT RECEIVING DEVICE - A semiconductor material includes a matrix semiconductor includes constituent atoms bonded to each other into a tetrahedral bond structure, and a heteroatom Z doped to the matrix semiconductor, in which the heteroatom Z is inserted in a bond so as to form a bond-center structure with an stretched bond length, and the bond-center structure is contained in a proportion of 1% or more based on the heteroatom Z.05-20-2010
20090026489SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device has an active layer of a gallium nitride compound semiconductor material, a first semiconductor layer of In01-29-2009
20110316041SAPPHIRE SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME AND NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - A sapphire substrate having one principal surface on which a nitride semiconductor is grown, said one principal surface having a plurality of projections. Each of the projections has a generally pyramidal shape with a not truncated, more sharpened tip and with an inclined surface composed of a crystal growth-suppression surface that lessens or suppresses the growth of the nitride semiconductor and also which has an inclination change line at which an inclination angle discontinuously varies.12-29-2011
20110316040COMPOSITE SUBSTRATE FOR LED LIGHT EMITTING ELEMENT, METHOD OF PRODUCTION OF SAME, AND LED LIGHT EMITTING ELEMENT - A substrate for an LED light emitting element having a small difference of linear thermal expansion coefficient with the III-V semiconductor crystal constituting an LED, having an excellent thermal conductivity, and suitable for high output LEDs. A porous body comprises one or more materials selected from silicon carbide, aluminum nitride, silicon nitride, diamond, graphite, yttrium oxide, and magnesium oxide and has a porosity that is 10 to 50 volume % and a three-point bending strength that is 50 MPa or more. The porous body is infiltrated, by means of liquid metal forging, with aluminum alloy or pure aluminum at an infiltration pressure of 30 MPa or more, cut and/or ground to a thickness of 0.05 to 0.5 mm and to a surface roughness (Ra) of 0.01 to 0.5 μm, then is formed with a metal layer comprising one or more elements selected from Ni, Co, Pd, Cu, Ag, Au, Pt and Sn on its surface to a thickness of 0.5 to 15 μm, so as to thereby produce the composite substrate for the LED light emitting element.12-29-2011
20120001223NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND PROCESS FOR PRODUCTION THEREOF - A nitride-based semiconductor light-emitting device 01-05-2012
20120056237SEMICONDUCTOR COMPOUND STRUCTURE AND METHOD OF FABRICATING THE SAME USING GRAPHENE OR CARBON NANOTUBES, AND SEMICONDUCTOR DEVICE INCLUDING THE SEMICONDUCTOR COMPOUND STRUCTURE - A semiconductor compound structure and a method of fabricating the semiconductor compound structure using graphene or carbon nanotubes, and a semiconductor device including the semiconductor compound structure. The semiconductor compound structure includes a substrate; a buffer layer disposed on the substrate, and formed of a material including carbons having hexagonal crystal structures; and a semiconductor compound layer grown and formed on the buffer layer.03-08-2012
20110095332LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM - A light emitting device includes a first electrode, a first semiconductor layer, an active layer; a second semiconductor layer, and a second electrode. A current blocking layer is formed on a side surface of and has a width provided within the first semiconductor layer. The thickness and width of the current blocking layer is smaller than the thickness and width of the first semiconductor layer.04-28-2011
20120018774FABRICATION OF NITRIDE NANOPARTICLES - A method of manufacturing a nitride nanoparticle comprises manufacturing the nitride nanostructure from constituents including: a material containing metal, silicon or boron, a material containing nitrogen, and a capping agent having an electron-accepting group for increasing the quantum yield of the nitride nanostructure. Nitride nanoparticles, for example nitride nanocrystals, having a photoluminescence quantum yield of at least 1%, and up to 20% or greater, may be obtained.01-26-2012
20110049560COMPOSITIONS AND METHODS FOR GENERATING WHITE LIGHT - Crystalline inorganic-organic hybrid structures having a plurality of layers of a repeating unit characterized by a first organic ligand layer, a second organic ligand layer, and a two-dimensional semiconducting inorganic double layer having two opposing surfaces therebetween, wherein the two-dimentional semiconducting inorganic double layer is characterized by two single atom thick layers of a II-chalcogenide compound; and the first organic ligand layer and the second organic ligand layer are attached to the two opposing surfaces of the two-dimensional semiconducting inorganic double layer through a covalent bond or a coordinate covalent bond between the compounds of the organic ligand layers and the metal cation species of the II-VI chalcogenide compounds, so that the semiconducting inorganic double layer is directed by the compounds of the two opposing organic layers to form ordered crystal lattices. Methods for the preparation of the hybrid structures are also disclosed.03-03-2011
20120153346METHOD FOR PRODUCING RECYCLED SUBSTRATE, RECYCLED SUBSTRATE, NITRIDE SEMICONDUCTOR ELEMENT, AND LAMP - A laminated semiconductor wafer (06-21-2012
20130009202GROUP III NITRIDE SEMICONDUCTOR DEVICE, METHOD OF FABRICATING GROUP III NITRIDE SEMICONDUCTOR DEVICE - A group-III nitride semiconductor device includes a light emitting layer emitting light of a wavelength in the range of 480 to 600 nm; a first contact layer over the light emitting layer; a second contact layer in direct contact with the first contact layer; and a metal electrode in direct contact with the second contact layer. The first and second contact layers comprise a p-type gallium nitride-based semiconductor. The p-type dopant concentration of the first contact layer is lower than that of the second contact layer. The light emitting layer comprises a gallium nitride-based semiconductor. The interface between the first and second contact layers tilts at an angle of not less than 50 degrees and smaller than 130 degrees from a plane orthogonal to a reference axis extending along the c-axis. The second contact layer has a thickness within the range of 1 to 50 nm.01-10-2013
20110042711III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME - The present invention relates to III-nitride semiconductor light emitting device and a method for fabricating the same. The III-nitride semiconductor light emitting device includes: a substrate; a plurality of III-nitride semiconductor layers grown over the substrate and including an active layer for generating light by recombination of electrons and holes; and a protrusion formed on a surface of the substrate over which the semiconductor layers are to be grown, a section of the protrusion which is in parallel to the growth direction of the semiconductor layers being formed in a triangular shape.02-24-2011
20090134427LIGHT EMITTING DEVICE AND METHOD OF PRODUCING LIGHT EMITTING DEVICE - There has not been a DC drive type light emitting device capable of providing high brightness. The present invention provides a light emitting device, including: a pair of electrodes; a light emitter placed between the electrodes; and a semiconductor laminated to be adjacent to the light emitter, in which the semiconductor contains one of a chalcopyrite and an oxychalcogenide.05-28-2009
20110089466SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes a substrate 04-21-2011
20100052008ENHANCEMENT OF OPTICAL POLARIZATION OF NITRIDE LIGHT-EMITTING DIODES BY WAFER OFF-AXIS CUT - An off-axis cut of a nonpolar III-nitride wafer towards a polar (−c) orientation results in higher polarization ratios for light emission than wafers without such off-axis cuts. A 5° angle for an off-axis cut has been confirmed to provide the highest polarization ratio (0.9) than any other examined angles for off-axis cuts between 0 and 27°.03-04-2010
20100207160SEMICONDUCTOR LIGHT EMITTING DEVICE - Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a first conductive semiconductor layer including a first carrier blocking layer of semiconductor material; an active layer below the first conductive semiconductor layer; and a second conductive semiconductor layer below the active layer.08-19-2010
20100207159SEMICONDUCTOR LIGHT EMITTING DEVICE - Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure including a plurality of compound semiconductor layers, a second electrode layer below the light emitting structure, a channel layer between the light emitting structure and an edge area of the second electrode layer, a buffer layer on the channel layer, and a passivation layer on the buffer layer.08-19-2010
20090057709NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE - A nitride semiconductor light emitting diode (LED) comprises an n-type nitride semiconductor layer; an electron emitting layer formed on the n-type nitride semiconductor layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III; an active layer formed on the electron emitting layer; and a p-type nitride semiconductor layer formed on the active layer.03-05-2009
20120168816LIGHT EMITTING SEMICONDUCTOR DEVICE - A light emitting semiconductor device (07-05-2012
20100052010SEMICONDUCTOR LIGHT EMITTING DEVICE - Provided is a semiconductor light emitting device.03-04-2010
20100052009LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A light emitting device is provided. The light emitting device comprises a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, and an InNO layer. The active layer is disposed on the first conductive semiconductor layer. The second conductive semiconductor layer is disposed on the active layer. The InNO layer is disposed on the second conductive semiconductor layer.03-04-2010
20100052007LIGHT-EMITTING DEVICE, MANUFACTURING METHOD THEREOF, AND LAMP - The present invention provides a light-emitting device comprising an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer and a titanium oxide-based conductive film layer laminated in this order, wherein the titanium oxide-based conductive film layer comprises a first layer as a light extraction layer and a second layer as a current diffusion layer, the second layer being arranged on the p-type semiconductor layer side of the first layer, a method of manufacturing a light-emitting device, and a lamp.03-04-2010
20090101936SEMICONDUCTOR LIGHT EMITTING ELEMENT AND WAFER - There are provided a semiconductor light emitting element which allows an improvement in light extraction efficiency without increasing the number of fabrication steps, and a wafer. In a semiconductor light emitting element 04-23-2009
20100270583MANUFACTURING METHOD OF NITRIDE SEMI-CONDUCTOR LAYER, AND A NITRIDE SEMI-CONDUCTOR LIGHT EMITTING DEVICE WITH ITS MANUFACTURING METHOD - In a process of fabricating a nitride nitride semi-conductor layer of Al10-28-2010
20100244087NITRIDE SEMICONDUCTOR, NITRIDE SEMICONDUCTOR CRYSTAL GROWTH METHOD, AND NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT - During the growth of a nitride semiconductor crystal on a nonpolar face nitride substrate, such as an m-face, the gas that constitutes the main flow in the process of heating up to a relatively high temperature range, before growth of the nitride semiconductor layer, (the atmosphere to which the main nitride face of the substrate is exposed) and the gas that constitutes the main flow until growth of first and second nitride semiconductor layers is completed (the atmosphere to which the main nitride face of the substrate is exposed) are primarily those that will not have an etching effect on the nitride, while no Si source is supplied at the beginning of growth of the nitride semiconductor layer. Therefore, nitrogen atoms are not desorbed from near the nitride surface of the epitaxial substrate, thus suppressing the introduction of defects into the epitaxial film. This also makes epitaxial growth possible with a surface morphology of excellent flatness.09-30-2010
20100244086METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR, METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP - A method for manufacturing a Group III nitride semiconductor of the present invention, comprising a sputtering step for disposing a substrate and a target in a chamber and forming a Mg-doped Group III nitride semiconductor on the substrate by a reactive sputtering method, wherein the sputtering step includes respective substeps of: a film formation step for forming a semiconductor thin film while doping with Mg; and a plasma treatment step for applying an inert gas plasma treatment to the semiconductor thin film that has been formed in the film formation step, and the Group III nitride semiconductor is formed by laminating the semiconductor thin film through alternate repetitions of the film formation step and the plasma treatment step.09-30-2010
20100301379METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR, METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP - A method for manufacturing a Group III nitride semiconductor of the present invention includes a sputtering step of forming a single-crystalline Group III nitride semiconductor on a substrate by a reactive sputtering method in a chamber in which a substrate and a Ga element-containing target are disposed, wherein said sputtering step includes respective substeps of: a first sputtering step of performing a film formation of the Group III nitride semiconductor while setting the temperature of the substrate to a temperature T12-02-2010
20120228670OPTICAL SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD OF THE SAME - An optical semiconductor element and a manufacturing method thereof that can improve the light extraction efficiency with maintaining the yield. The manufacturing method includes forming a plurality of recesses arranged at equal intervals along a crystal axis of a semiconductor film in a surface of the semiconductor film; and performing an etching process on the surface of the semiconductor film, thereby forming a plurality of protrusions arranged according to the arrangement form of the plurality of recesses and deriving from the crystal structure of the semiconductor film in the surface of the semiconductor film.09-13-2012
20120228669HIGH-YIELD FABRICATION OF LARGE-FORMAT SUBSTRATES WITH DISTRIBUTED, INDEPENDENT CONTROL ELEMENTS - A large-format substrate with distributed control elements is formed by providing a substrate and a wafer, the wafer having a plurality of separate, independent chiplets formed thereon; imaging the wafer and analyzing the wafer image to determine which of the chiplets are defective; removing the defective chiplet(s) from the wafer leaving remaining chiplets in place on the wafer; printing the remaining chiplet(s) onto the substrate forming empty chiplet location(s); and printing additional chiplet(s) from the same or a different wafer into the empty chiplet location(s).09-13-2012
20110121357LED with Improved Injection Efficiency - A light emitting device and method for making the same is disclosed. The light-emitting device includes an active layer sandwiched between a p-type semiconductor layer and an n-type semiconductor layer. The active layer emits light when holes from the p-type semiconductor layer combine with electrons from the n-type semiconductor layer therein. The active layer includes a number of sub-layers and has a plurality of pits in which the side surfaces of a plurality of the sub-layers are in contact with the p-type semiconductor material such that holes from the p-type semiconductor material are injected into those sub-layers through the exposed side surfaces without passing through another sub-layer. The pits can be formed by utilizing dislocations in the n-type semiconductor layer and etching the active layer using an etching atmosphere in the same chamber used to deposit the semiconductor layers without removing the partially fabricated device.05-26-2011
20080296610SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND SUBSTRATE USED IN FORMATION OF THE SAME - For a semiconductor laser, a stacked member comprising an active layer is formed on the surface of a GaN single-crystal substrate, a defect aggregation portion is formed on the rear face of the GaN single-crystal substrate, and an electrode is formed so as to be electrically connected to the defect aggregation portion on the rear face. The defect aggregation portion of this semiconductor laser has numerous crystal defects, and so the carrier concentration is high, and the electrical resistivity is lowered significantly. For this reason, in a semiconductor laser of this invention in which an electrode is formed on this defect aggregation portion, an Ohmic contact can easily be obtained between the GaN single-crystal substrate and the electrode, and by this means a lowered driving voltage is realized.12-04-2008
20080296609Nitride Semiconductor Device Comprising Bonded Substrate and Fabrication Method of the Same - A substrate 12-04-2008
20100327312Group III nitride semiconductor light-emitting device and method for producing the same - A group III nitride semiconductor light-emitting device includes: a conductive support; a p-electrode positioned on the support, a p-type layer containing a group III nitride semiconductor, an active layer and an n-type layer having a first surface, which are positioned in turn on the p-electrode; and an n-electrode positioned on the first surface of the n-type layer. A groove is formed in the first surface of the n-type layer in a pattern such that the first surface of the n-type layer is continuous. A light-transmitting insulating film is formed on side surface and bottom surface of the groove. The groove has a depth at least reaching the p-type layer. The n-electrode is formed in wiring form.12-30-2010
20120319160Method for Reducing Stress in Epitaxial Growth - A device and method for making the same are disclosed. The device includes a substrate having a first TEC, a stress relief layer overlying the substrate, and crystalline cap layer. The crystalline cap layer overlies the stress relief layer. The cap layer has a second TEC different from the first TEC. The stress relief layer includes an amorphous material that relieves stress between the crystalline substrate and the cap layer arising from differences in the first and second TECs at a growth temperature at which layers are grown epitaxially on the cap layer. The device can be used to construct various semiconductor devices including GaN LEDs that are fabricated on silicon or SiC wafers. The stress relief layer is generated by converting a layer of precursor material on the substrate after the cap layer has been grown to a stress-relief layer.12-20-2012
20120319162METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LIGHT-EMITTING APPARATUS - Provided is a method for manufacturing a nitride semiconductor device, including the steps of: forming an AlNO buffer layer containing at least aluminum, nitrogen, and oxygen on a substrate; and forming a nitride semiconductor layer on the AlNO buffer layer, wherein, in the step of forming the AlNO buffer layer, the AlNO buffer layer is formed by a reactive sputtering method using aluminum as a target in an atmosphere to and from which nitrogen gas and oxygen gas are continuously introduced and exhausted, and the atmosphere is an atmosphere in which a ratio of a flow rate of the oxygen gas to a sum of a flow rate of the nitrogen gas and the flow rate of the oxygen gas is not more than 0.5%.12-20-2012
20110001164SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF - A semiconductor light emitting device according to an embodiment includes a top layer having a top surface and a bottom surface, the top layer being an n electrode; an uneven pattern formed in the bottom surface of the n electrode; an n-type semiconductor layer formed under the n electrode, the n-type semiconductor layer having a top surface and a bottom surface; an uneven pattern formed in the top surface of the n-type semiconductor layer, the uneven pattern of the n-type semiconductor layer corresponding to the uneven pattern of the n electrode; an active layer formed under the n-type semiconductor layer; a p-type semiconductor layer formed under the active layer; and a p electrode formed under the p-type semiconductor layer.01-06-2011
20120267678LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, ELECTRONIC APPLIANCE, AND METHOD OF MANUFACTURING THE SAME - A light-emitting element is provided which has a light-emitting layer between a first electrode and a second electrode, where the light-emitting layer has a first layer and a second layer; the first layer contains a first organic compound and a third organic compound; the second layer contains a second organic compound and the third organic compound; the first layer is provided to be in contact with the second layer on the first electrode side; the first organic compound is an organic compound with an electron transporting property; the second organic compound is an organic compound with a hole transporting property; the third organic compound has an electron trapping property; and light emission from the third organic compound can be obtained when voltage is applied to the first electrode and the second electrode so that the potential of the first electrode is higher than that of the second electrode.10-25-2012
20120319161METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR LIGHT EMITTING DEVICE WAFER - According to one embodiment, a method is disclosed for manufacturing a semiconductor light emitting device. The method can include forming a nitride semiconductor layer including a light emitting layer on a first substrate having an unevenness, bonding the nitride layer to a second substrate, and separating the first substrate from the nitride layer by irradiating the nitride layer with light. The forming the nitride layer includes leaving a cavity in a space inside a depression of the unevenness while forming a thin film on the depression. The film includes a same material as part of the nitride layer. The separating includes causing the film to absorb part of the light so that intensity of the light applied to a portion of the nitride layer facing the depression is made lower than intensity of the light applied to a portion facing a protrusion of the unevenness.12-20-2012
20100230713SEMICONDUCTOR LIGHT EMITTING ELEMENT, GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SUCH GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE - An object of the present invention is to obtain, with respect to a semiconductor light-emitting element using a group III nitride semiconductor substrate, a semiconductor light-emitting element having an excellent light extraction property by selecting a specific substrate dopant and controlling the concentration thereof. The semiconductor light-emitting element comprises a substrate composed of a group III nitride semiconductor comprising germanium (Ge) as a dopant, an n-type semiconductor layer composed of a group III nitride semiconductor formed on the substrate, an active layer composed of a group III nitride semiconductor formed on the n-type semiconductor layer, and a p-type semiconductor layer composed of a group III nitride semiconductor formed on the active layer in which the substrate has a germanium (Ge) concentration of 2×1009-16-2010
20120326205METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - An MQW-structure light-emitting layer is formed by alternately stacking InGaN well layers and AlGaN barrier layers. Each well layer and each barrier layer are formed so as to satisfy the following relations: 12.9≦−2.8x+100y≦37 and 0.65≦y≦0.86, or to satisfy the following relations: 162.9≦7.1x+10z≦216.1 and 3.1≦z≦9.2, here x represents the Al compositional ratio (mol %) of the barrier layer, and y represents the difference in bandgap energy (eV) between the barrier layer and the well layer, and z represents the In compositional ratio (mol %) of the well layer.12-27-2012
20100176419LIGHT-EMITTING DIODE WITH HIGH LIGHTING EFFICIENCY - The invention discloses a light-emitting diode. In an embodiment, the light-emitting diode includes a substrate, a first doping type semiconductor layer, a second doping type semiconductor layer, a light-emitting layer and plural laminated structures. The first doping type semiconductor layer, the light-emitting layer and the second doping type semiconductor layer are formed on the substrate in sequence. The plural laminated structures are formed on the top surface of the second doping type semiconductor layer such that the top surface is partially exposed. Each laminated structure consists of plural transparent insulating layers which have their respective refractive indices. Additionally, each of the laminated structures is formed in a way of upwardly stacking the transparent insulating layers in sequence with the refractive indices of the transparent insulating layers decreasing gradually, so as to enhance the light-extraction efficiency and the lighting efficiency of the light-emitting diode.07-15-2010
20130015492OPTO-ELECTRONIC AND ELECTRONIC DEVICES USING AN N-FACE OR M-PLANE GALLIUM NITRIDE SUBSTRATE PREPARED VIA AMMONOTHERMAL GROWTH - A method for growing III-V nitride films having an N-face or M-plane using an ammonothermal growth technique. The method comprises using an autoclave, heating the autoclave, and introducing ammonia into the autoclave to produce smooth N-face or M-plane Gallium Nitride films and bulk GaN.01-17-2013
20120241812LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A light-emitting element is disclosed that can drive at a low driving voltage and that has a longer lifetime than the conventional light-emitting element, and a method is disclosed for manufacturing the light-emitting element. The disclosed light-emitting element includes a plurality of layers between a pair of electrodes; and at least one layer among the plurality of layers contains one compound selected from the group consisting of oxide semiconductor and a metal oxide, and a compound having high hole transportation properties. Such the light-emitting element can suppress the crystallization of a layer containing one compound selected from the group consisting of oxide semiconductor and a metal oxide, and a compound having high hole transportation properties. As a result, a lifetime of the light-emitting element can be extended.09-27-2012
20100090246VERTICAL NITRIDE-BASED LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME - Provided is a vertical nitride-based LED including a first electrode; a first nitride semiconductor layer that is disposed on the first electrode; an active layer that is disposed on the first nitride semiconductor layer; a second nitride semiconductor layer that is disposed on the active layer; an ohmic contact pattern that is disposed on the second nitride semiconductor layer; a second electrode that is disposed on the ohmic contact pattern; and a bonding pad that is electrically connected to the second electrode and disposed on the second nitride semiconductor layer.04-15-2010
20080230800N-Type Group III Nitride Semiconductor Layered Structure - An object of the present invention is to provide a low-resistance n-type Group III nitride semiconductor layered structure having excellent flatness and few pits. The inventive n-type group III nitride semiconductor layered structure comprises a substrate and, stacked on the substrate, an n-type impurity concentration periodic variation layer comprising an n-type impurity atom higher concentration layer and an n-type impurity atom lower concentration layer, said lower concentration layer being stacked on said higher concentration layer.09-25-2008
20080224171Light Emitting Device with Filtering Layer - A light emitting device including, between an input mirror and an output mirror forming a cavity, the output mirror having a reflectivity strip, a stack itself including an etch stop layer and an active layer. The stop layer is adapted to filter at least wavelengths lower than the lower limit of the reflectivity strip.09-18-2008
20080217648LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING DEVICE - An object is to provide a light-emitting element and a light-emitting device each of which consumes less power and has high emission efficiency, high performance, and high reliability. A light-emitting element has an EL layer provided with a light-emitting layer, which includes an inorganic light-emitting material containing a mixed-valence compound, between a pair of electrode layers. When an element in a given compound has a plurality of valences, this element is in a state that is referred to as a mixed-valence state and this compound is referred to as a mixed-valence compound. The mixed-valence compound affects charge mobility and emission color, and a light-emitting device having such a light-emitting element consumes less power, has high reliability and high image quality, and emits various colors of light.09-11-2008
20080217647METHOD OF FORMING NITRIDE SEMICONDUCTOR LAYER ON PATTERNED SUBSTRATE AND LIGHT EMITTING DIODE HAVING THE SAME - A method of forming high quality nitride semiconductor layers on a patterned substrate and a light emitting diode having the same are disclosed. After forming a nucleation layer on the patterned substrate, a first 3D and 2D growth layers are formed thereon in this order by growing nitride semiconductor layers in 3D and 2D growth conditions. Then, a second 3D growth layer is formed on the first 2D growth layer by growing a nitride semiconductor layer in another 3D growth condition, and a second 2D growth layer is formed on the second 3D growth layer by growing a nitride semiconductor layer in another 2D growth condition. As such, the thickness of the 3D growth layer can be reduced by alternately forming the 3D and 2D growth layers, thereby preventing the 3D growth layer from having a rough surface and improving crystal quality of the final 2D growth layer.09-11-2008
20130175573LIGHT-EMITTING DIODE CHIP AND METHOD FOR PRODUCING A LIGHT-EMITTING DIODE CHIP - The invention relates to a light-emitting diode chip, comprising an n-type semiconductor layer (07-11-2013
20110272734Light-Emitting Device Substrate - The present invention is a minimal-defect light-emitting device substrate that enables emitted light to issue from a device's substrate side, and is a light-emitting device 11-10-2011
20100276726LIGHT EMITTING DEVICE, PACKAGE, AND SYSTEM - A light emitting device includes a first semiconductor layer of a first conductivity type, an active layer adjacent to the first semiconductor layer, a second semiconductor layer of a second conductivity type and provided adjacent to the active layer, and a passivation layer provided on a side surface of the active layer. The passivation layer may be a semiconductor layer of one of the first conductivity type, the second conductivity type or a first undoped semiconductor layer. A first electrode may be coupled to the first semiconductor layer and a second electrode may be coupled to the second semiconductor layer.11-04-2010
20080197378Group III Nitride Diodes on Low Index Carrier Substrates - A light emitting diode is disclosed that includes a layer of p-type Group III nitride and a layer of n-type Group III nitride on a transparent carrier substrate that has an index of refraction lower then the layer of Group III nitride adjacent the carrier substrate. A layer of transparent adhesive joins the transparent substrate to the Group III nitride layers, and the transparent adhesive has an index of refraction lower than the layer of Group III nitride. The diode includes respective ohmic contacts to the p-type Group III nitride layer and to the n-type Group III nitride layer.08-21-2008
20110233604ORGANIC ELECTROLUMINESCENCE DEVICE - According to one embodiment, an organic electroluminescence device including an anode, a cathode, an emitting layer positioned therebetween and including a first host material and a first dopant, and an organic layer in contact with the emitting layer between the cathode and the emitting layer and including a second host material and a second dopant. The first host material has a hole-transporting property. The first dopant has a blue-fluorescent property and fluorescence thereof exhibits the maximum intensity at a first wavelength. The second host material has an electron-transporting property. The second host material has an ionization energy higher than an ionization energy of the first host material. The second dopant has an ionization energy lower than the ionization energy of the first host material. The second dopant has fluorescent and/or phosphorescent properties and luminescence thereof exhibits the maximum intensity at a second wavelength shorter than the first wavelength.09-29-2011
20130193478SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD FOR PRODUCING SEMICONDUCTOR LIGHT EMITTING ELEMENT AND LIGHT EMITTING DEVICE - In a semiconductor light emitting element having a sapphire substrate, and a lower semiconductor layer and an upper semiconductor layer laminated on the sapphire substrate, the sapphire substrate includes a substrate top surface, a substrate bottom surface, first substrate side surfaces and second substrate side surfaces; plural first cutouts and plural second cutouts are provided at border portions between the first substrate side surface and the substrate top surface and between the second substrate side surface and the substrate top surface; the lower semiconductor layer includes a lower semiconductor bottom surface, a lower semiconductor top surface, first lower semiconductor side surfaces and second lower semiconductor side surfaces; plural first projecting portions and plural first depressing portions are provided on the first lower semiconductor side surface; and plural second protruding portions and second flat portions are provided on the second lower semiconductor side surface.08-01-2013
20120086044LIGHT EMITTING DEVICE AND METHOD OF PRODUCING LIGHT EMITTING DEVICE - There is provided a light emitting device that includes a base wafer that contains silicon, a plurality of seed bodies provided in contact with the base wafer, and a plurality of Group 3-5 compound semiconductors that are each lattice-matched or pseudo-lattice-matched to corresponding seed bodies. In the device, a light emitting element that emits light in response to current supplied thereto is formed in at least one of the plurality of the Group 3-5 compound semiconductors, and a current limiting element that limits the current supplied to the light emitting element is formed in at least one of the plurality of the Group 3-5 compound semiconductors other than the Group 3-5 compound semiconductor in which the light emitting element is formed.04-12-2012

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