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With housing or contact structure

Subclass of:

257 - Active solid-state devices (e.g., transistors, solid-state diodes)

257079000 - INCOHERENT LIGHT EMITTER STRUCTURE

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DocumentTitleDate
20130043503SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light emitting device, which includes a light transmissive electrode layer formed using a conductive thin film and an insulating thin film to substitute for a transparent electrode layer, comprises a substrate; a first semiconductor layer formed on the substrate; an active layer formed on the first semiconductor layer; a second semiconductor layer formed on the active layer; a light transmissive electrode layer formed on the second semiconductor layer, the light transmissive electrode layer having a structure in which at least one conductive thin film and at least one insulating thin film are deposited; and a first electrode formed on the light transmissive electrode layer, wherein the light transmissve electrode layer includes at least one contact portion for contacting the at least one conductive thin film with the first electrode.02-21-2013
20130026532LIGHT EMITTING DEVICE - A light emitting device of the present invention has a package constituted by a molded article having a light emitting face, a bottom face that is contiguous with the light emitting face, and a rear face that is on the opposite side from the light emitting face, and a pair of leads that are partially embedded in the molded article, protrude from the bottom face, and have ends that bend toward either the light emitting face or the rear face, and a light emitting element that is disposed on one of the pair of leads, the molded article has a front protruding part that protrudes on the light emitting face side, and a rear protruding part that protrudes on the rear face side, between the leads on the bottom face.01-31-2013
20120199869Light-Emitting Device - To provide a light-emitting device having a top-emission structure with low power consumption. A convex structure body is formed over a substrate to be provided with an organic EL element, and then an upper electrode layer is formed. Thus, the upper electrode layer has a shape following the convex shape. In addition, a conductive layer is formed over a substrate sealing an organic EL layer. Then, by sealing a surface where the upper electrode layer is formed and a surface where the conductive layer is formed are sealed to face each other, at least part of the electrode layer overlapped with the convex structure body is in contact with the conductive layer, so that the resistivity of the upper electrode layer is significantly reduced. Thus, power consumption of a light-emitting element can be reduced.08-09-2012
20130026529LIGHT EMITTING CHIP PACKAGE AND METHOD FOR MAKING SAME - A light emitting chip package includes a substrate, an insulation layer, a patterned electric conductive layer, a light emitting chip, an encapsulation, a plurality of thermal conductors and electrical conductors. The insulation layer is formed on a top surface of the substrate. The patterned electric conductive layer partially covers the insulation layer. The light emitting chip is arranged on the electric conductive layer. The encapsulation covers the light emitting chip and the electric conductive layer. The plurality of thermal conductors is formed at a bottom surface side of the substrate. The plurality of electrical conductors penetrates the insulation layer and connects the conductive layer with the thermal conductor. The plurality of electrical conductors is isolated from each other.01-31-2013
20110180840LED PACKAGE - The present invention relates to an LED package including a lead frame including a chip attaching portion with at least one LED chip attached thereto and a plurality of terminal portions each having a width narrower than the chip attaching portion, and a housing for supporting the lead frame. The plurality of terminal portions include at least one first terminal portion extending from a portion of a width of the chip attaching portion, and a plurality of second terminal portions spaced apart from the chip attaching portion.07-28-2011
20110204408HIGH THERMAL PERFORMANCE PACKAGING FOR OPTOELECTRONICS DEVICES - A novel submount for the efficient dissipation of heat away from a semiconductor light emitting device is described, which also maintains efficient electrical conductivity to the n and p contacts of the device by separating the thermal and electrical conductivity paths. The submount comprises at least the following constituent layers: a substrate (08-25-2011
20120168814ADHESIVE COMPOSITION - An adhesive composition for flip-chip-mounting a chip component on a circuit board contains an alicyclic epoxy compound, an alicyclic acid anhydride curing agent, and an acrylic resin. The amount of the alicyclic acid anhydride curing agent is 80 to 120 parts by mass based on 100 parts by mass of the alicyclic epoxy compound, and the amount of the acrylic resin is 5 to 50 parts by mass based on 100 parts by mass of the total amount of the alicyclic epoxy compound, the alicyclic acid anhydride curing agent, and the acrylic resin. The acrylic resin is a resin obtained by copolymerization of 100 parts by mass of alkyl (meth)acrylate and 2 to 100 parts by mass of glycidyl methacrylate and having a water absorption rate of 1.2% or less.07-05-2012
20110186898Semiconductor package structure - A semiconductor package structure includes a bowl-like carrier, a semiconductor component, and electrode pins. The semiconductor component is disposed on the bowl-like carrier and is received in an accommodating recess of the bowl-like carrier. The electrode pins are electrically connected with the semiconductor component through wires. Channels are recessed along recess-walls of the accommodating recess and located between the semiconductor component and the electrode pins, where the wires pass through the channels. Therefore, the length of bonding wires can be reduced, and as well the cost of the wires, let alone the wires can be protected appropriately.08-04-2011
20100084681PRODUCTION PROCESS FOR SURFACE-MOUNTING CERAMIC LED PACKAGE, SURFACE-MOUNTING CERAMIC LED PACKAGE PRODUCED BY SAID PRODUCTION PROCESS, AND MOLD FOR PRODUCING SAID PACKAGE - The present invention is related to a surface-mounting ceramic LED package and a method for its production comprising: layering a ceramic green sheet which has a hole and a second ceramic green sheet, inserting a mold with a groove to form a partition in the bottom of the ceramic green sheet substrate, and firing the ceramic green sheet substrate.04-08-2010
20080277684SURFACE LIGHT EMITTING DIODE MODULE WITH A SURFACE LIGHT EMITTING DIODE CONNECTED TO A CONDUCTIVE SUBSTRATE TIGHTLY - A surface light emitting diode module includes a conductive substrate including a first electrode section. A first hole is formed on the first electrode section. The surface light emitting diode module further includes a surface light emitting diode installed on the conductive substrate. The surface light emitting diode includes a first electrode pin for contacting with the first electrode section. A second hole is formed on the first electrode pin and disposed in a position corresponding to the first hole. The surface light emitting diode module further includes a first fixing component passing through the second hole and the first hole so as to fix the conductive substrate and the surface light emitting diode.11-13-2008
20130026531NON-POLAR LIGHT EMITTING DIODE HAVING PHOTONIC CRYSTAL STRUCTURE AND METHOD OF FABRICATING THE SAME - A non-polar light emitting diode (LED) having a photonic crystal structure and a method of fabricating the same. A non-polar LED includes a support substrate, a lower semiconductor layer positioned on the support substrate, an upper semiconductor layer positioned over the lower semiconductor layer, a non-polar active region positioned between the lower and upper semiconductor layers, and a photonic crystal structure embedded in the lower semiconductor layer. The photonic crystal structure embedded in the lower semiconductor layer may improve the light emitting efficiency by preventing the loss of light in the semiconductor layer, and the photonic crystal structure is used to improve the polarization ratio of the non-polar LED.01-31-2013
20130026530LIGHT EMITTING DEVICE MODULE - Disclosed is a light emitting device module including a package body, a first lead frame and a second lead frame provided on the package body, a light emitting device electrically connected to the first lead frame and the second lead frame, a first pad and a second pad respectively formed on the lower surfaces of the first lead frame and the second lead frame, and a third pad formed on the lower surface of the package body, wherein at least one of the first pad, the second pad and the third pad includes a plurality of sub-pads.01-31-2013
20080258170Light emitting diode structure - The light emitting diode structure includes a substrate, a first electricity semiconductor layer formed on the substrate, a light-emitting layer formed on the first electricity semiconductor layer, a second electricity semiconductor layer formed on the light-emitting layer, a barrier layer formed on the second electricity semiconductor layer, and a contact layer formed on the barrier layer.10-23-2008
20080258169SUBSTRATE FOR MOUNTING LIGHT EMITTING ELEMENT, LIGHT EMITTING MODULE AND LIGHTING APPARATUS - A substrate for mounting light emitting elements having two or more conductive layers and an insulating layer provided between each conductive layer, which are formed on the outside of an enameled substrate, the enameled substrate being an enamel layer covering the surface of a core metal. The conductive layer provided on the enamel layer side links one end of enameled substrate to the other end, and feeds power to a plurality of light emitting elements mounted in the longitudinal direction of the conductive layer. Furthermore, the conductive layer on the surface of a protruding section provided at both ends of the enameled substrate extends and forms a connection with another substrate. A light emitting module is formed by mounting light emitting elements on the substrate.10-23-2008
20080258166Semiconductor Light Emitting Device and Method for Manufacturing the Same - There is provided a semiconductor light emitting semiconductor device including an n-side electrode which has a structure capable of stably suppressing the contact resistance between the n-side electrode and a nitride semiconductor layer. Further, there is provided a light emitting device and a manufacturing method wherein an ohmic contact between the n-side electrode and the nitride semiconductor layer can be obtained by a simple manufacturing process, and the n-side electrode has an Au layer on a top surface to facilitate wire bonding. Semiconductor layers (10-23-2008
20110193129Light-Emitting Device and Method for Manufacturing the Same - The present invention provides an organic light-emitting element where a lower electrode, an organic compound layer and an upper electrode are laminated on a substrate, wherein the upper electrode of the organic EL element is formed by a laminate of at least a conductive first inorganic film, a conductive organic film and a conductive second inorganic film, in order to suppress the occurrence of dark spot, so that the occurrence of pinholes in the upper electrode leading to dark spots is suppressed. Here, pinholes refer to holes in the upper electrode that penetrate upper electrode from the organic compound layer underneath to the atmosphere above.08-11-2011
20110193127Light Emitting Apparatus And Lighting System - Disclosed are a light emitting apparatus and a lighting system. The light emitting apparatus includes a body, a first electrode having a protrusion pattern on the body, a second electrode electrically separated from the first electrode on the body, an adhesive layer on the first electrode including the protrusion pattern, and a light emitting device on the adhesive layer.08-11-2011
20110193126SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light-emitting element comprises: a semiconductor substrate; a semiconductor laminated structure including a first conductivity-type semiconductor layer, an active layer, a second conductivity-type semiconductor layer, and a contact layer that are sequentially laminated on the semiconductor substrate; a ridge portion in an upper portion of the semiconductor laminated structure; a channel portion adjoining opposite sides of the ridge portion; a terrace portion adjoining opposite sides of the channel portion and, with the channel portion, sandwiching the ridge portion; a first insulating film covering the channel portion and having openings on the ridge portion and the terrace portion; a single-layer adhesive layer on the first insulating film; a Pd electrode on the ridge portion and a part of the single-layer adhesive layer and electrically connected to the contact layer of the ridge portion; and a second insulating layer covering a portion not covered by the Pd electrode of the single-layer adhesive layer, and the terrace portion.08-11-2011
20100148208LED LIGHTING ASSEMBLY WITH IMPROVED HEAT MANAGEMENT - The present invention provides a lighting head assembly that incorporates a high intensity LED package into an integral assembly including a heat sink and circuit board for further incorporation into other useful lighting devices. The present invention primarily includes a heat sink member that also serves as a mounting die and a reflector cup into which the LED package is mounted. The circuit board is placed behind the reflector cup and includes riser members that extend through holes in the rear wall of the reflector cup to facilitate electrical connections to the leads of the LED. This particular means for assembly allows the reflector cup and circuit board to cooperate to retain the LED package, provide electrical and control connections, provide integral heat sink capacity and includes an integrated reflector cup. In this manner, high intensity LED packages can be incorporated into lighting assemblies through the use of the present invention by simply installing the present invention into a housing and providing power connections thereto.06-17-2010
20100148207SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE AND ITS MANUFACTURING METHOD - A semiconductor device in which a semiconductor has good heat dissipation efficiency, a display employing such a semiconductor device and a method for manufacturing a semiconductor device. A conductive pattern providing a semiconductor-connecting terminal portion and further providing first and second external-connection terminal portion on the opposite sides of the semiconductor-connecting terminal portion is formed on the surface of a flexible insulating substrate to produce a flexible printed wiring board on which a semiconductor is mounted and connected with the semiconductor-connecting terminal portion in the conductive pattern. In such a semiconductor device, a slit is formed in the insulating substrate to surround the semiconductor while leaving a part around the semiconductor thus providing a semiconductor holding part. The insulating substrate is turned down such that the surface comes inside excepting the semiconductor holding part, and the slit is formed such that the mounted semiconductor projects from the backside of the insulating substrate to the outside when the first and second external-connection terminal portion are connected, respectively, with other components.06-17-2010
20130037849VERTICAL STRUCTURE LED DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a vertical structure light emitting diode device, the method including: sequentially forming a first conductivity type III-V group compound semiconductor layer, an active layer, and a second conductivity type III-V group compound semiconductor layer on a substrate for growth; bonding a conductive substrate to the second conductivity type III-V group compound semiconductor layer; removing the substrate for growth from the first conductivity type III-V group compound semiconductor layer; and forming an electrode on an exposed portion of the first conductive III-V group compound semiconductor layer due to the removing the substrate for growth, wherein the bonding a conductive substrate comprises partially heating a metal bonding layer by applying microwaves to a bonding interface while bringing the metal bonding layer into contact with the bonding interface.02-14-2013
20130037847LAYERED SUBSTRATE, LIGHT-EMITTING DIODE INCLUDING THE LAYERED SUBSTRATE AND LIGHTING DEVICE USING THE LIGHT-EMITTING DIODE - A layered substrate includes a first substrate including an upper surface, a lower surface, a peripheral surface between peripheral edges of the upper surface and the lower surface, and a cut portion cut into the peripheral surface and passing through the upper surface and the lower surface, and a second substrate including an upper surface, a lower surface, and a peripheral surface between peripheral edges of the upper surface and the lower surface, and the lower surface of the second substrate layered on the upper surface of the first substrate and closing the cut portion of the first substrate from above. The second substrate includes a heat conductor that is thermally connected to an element to be mounted on the upper surface of the second substrate, the heat conductor configured to thermally extend to the cut portion of the first substrate.02-14-2013
20130037848LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE HAVING THE SAME - Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, a first electrode disposed in an opening portion of the light emitting structure and contacted with a portion of the first conductive type semiconductor layer, an insulating layer covering the first electrode, a second electrode disposed on the insulating layer and connected to the second conductive type semiconductor layer, a first electrode layer under the second electrode.02-14-2013
20100163918LED PACKAGE - The present invention relates to an LED package including a lead frame including a chip attaching portion with at least one LED chip attached thereto and a plurality of terminal portions each having a width narrower than the chip attaching portion, and a housing for supporting the lead frame. The plurality of terminal portions include at least one first terminal portion extending from a portion of a width of the chip attaching portion, and a plurality of second terminal portions spaced apart from the chip attaching portion.07-01-2010
20100163915Thin-Film Semiconductor Component and Component Assembly - A thin-film semiconductor component having a carrier layer and a layer stack which is arranged on the carrier layer, the layer stack containing a semiconductor material and being provided for emitting radiation, wherein a heat dissipating layer provided for cooling the semiconductor component is applied on the carrier layer. A component assembly is also disclosed.07-01-2010
20090200570Light Emitting Device Mounting Substrate, Light Emitting Device Housing Package, Light Emitting Apparatus, and Illuminating Apparatus - A light-emitting apparatus with improved dissipation efficiency of heat transmitted to a specific electrode of a light-emitting device is provided. A light-emitting device mounting substrate used for the light emitting apparatus include a base body (08-13-2009
20100072511SEMICONDUCTOR CHIP ASSEMBLY WITH COPPER/ALUMINUM POST/BASE HEAT SPREADER - A semiconductor chip assembly includes a semiconductor device, a heat spreader, a conductive trace and an adhesive. The semiconductor device is electrically connected to the conductive trace and thermally connected to the heat spreader. The heat spreader includes a post and a base that include a copper surface layer and an aluminum core. The post extends upwardly from the base into an opening in the adhesive, and the base extends laterally from the post. The adhesive extends between the post and the conductive trace and between the base and the conductive trace. The conductive trace provides signal routing between a pad and a terminal.03-25-2010
20100072510SEMICONDUCTOR CHIP ASSEMBLY WITH POST/BASE/CAP HEAT SPREADER - A semiconductor chip assembly includes a semiconductor device, a heat spreader, a conductive trace and an adhesive. The semiconductor device is electrically connected to the conductive trace and thermally connected to the heat spreader. The heat spreader includes a post, a base and a cap. The post extends upwardly from the base into an opening in the adhesive, the base extends below and laterally from the post, and the cap extends above and laterally from the post. The adhesive extends between the post and the conductive trace and between the base and the conductive trace. The conductive trace provides signal routing between a pad and a terminal and the heat spreader provides thermal dissipation between the cap and the base.03-25-2010
20100072509Lead frame assembly, lead frame and insulating housing combination, and led module having the same - A unitary lead frame assembly having a plurality of lead frame sets each comprises a first lead frame unit. The first lead frame unit has a pair of first and second frame portions extending along a first direction and spaced apart from each other along a second direction different from the first direction. The lead frame set further comprises at least two second lead frame units disposed between the first and second frame portions and spaced apart from each other along the second direction. Each of the second lead frame units cooperates with the first lead frame unit to define at least one first die-bonding area therebetween.03-25-2010
20100072508Group III nitride semiconductor light-emitting device and method for producing the same - A method for producing a Group III nitride semiconductor light-emitting device with a face-up configuration including a p-type layer and a transparent electrode composed of ITO is provided in which a p-pad electrode on the transparent electrode and an n-electrode on an n-type layer are simultaneously formed. The p-pad electrode and the n-electrode are composed of Ni/Au. The resultant structure is heat treated at 570° C. and good contact can be established in the p-pad electrode and the n-electrode. The heat treatment also provides a region in the transparent electrode immediately below the p-pad electrode, the region and the p-type layer having a higher contact resistance than that of the other region of the transparent electrode and the p-type layer. Thus, a region of an active layer below the provided region does not emit light and hence the light-emitting efficiency of the light-emitting device can be increased.03-25-2010
20100072507Lead frame, and light emitting diode module having the same - A light emitting diode (LED) module includes a lead frame having a number (N) of conducting arms spaced apart from each other, where N≧3, and at least one LED die mounted on one of any two neighbor conducting arms. Any two neighbor conducting arms are electrically coupled each other.03-25-2010
20100072505LED INTERCONNECT ASSEMBLY - A light-emitting device assembly which can be used in many applications has a contact carrier, at least one light-emitting device, a heat sink and at least one securing member. The contact carrier has a light-emitting device receiving region and resilient contacts which are provided proximate to the light-emitting device receiving region. The at least one light-emitting device has leads which extend therefrom to mechanically and electrically engage the resilient contacts. The heat sink is thermally coupled to the at least one light-emitting device. The at least one securing member extends through the contact carrier and into the heat sink to releasably retain the contact carrier and the at least one light-emitting device in position relative to each other and relative to the heat sink.03-25-2010
20100072504Light-Emitting Device and Method for Manufacturing the Same - Provided are a light-emitting device and a method for manufacturing the same. The light-emitting device includes a substrate, a light-emitting device, a protection device, and a connecting line. The light-emitting device is formed on one part of the substrate, and includes a first semiconductor layer and a second semiconductor layer. The protection device is formed on another part of the substrate, and includes a fourth semiconductor layer and a fifth semiconductor layer. The connecting line electrically connects the light-emitting device and the protection device.03-25-2010
20130032851OPTOELECTRONIC ARCHITECTURE HAVING COMPOUND CONDUCTING SUBSTRATE - Optoelectronic device modules, arrays optoelectronic device modules and methods for fabricating optoelectronic device modules are disclosed. The device modules are made using a starting substrate having an insulator layer sandwiched between a bottom electrode made of a flexible bulk conductor and a conductive back plane. An active layer is disposed between the bottom electrode and a transparent conducting layer. One or more electrical contacts between the transparent conducting layer and the back plane are formed through the transparent conducting layer, the active layer, the flexible bulk conductor and the insulating layer. The electrical contacts are electrically isolated from the active layer, the bottom electrode and the insulating layer.02-07-2013
20130032849LIGHT EMITTING DEVICES - Light-emitting devices are provided, the light-emitting devices include a light-emitting structure layer having a first conductive layer, a light-emitting layer and a second conductive layer sequentially stacked on a first of a substrate, a plurality of seed layer patterns formed apart each other in the first conductive layer; and a plurality of first electrodes formed through the substrate, wherein each of the first electrodes extends from a second side of the substrate to each of the seed layer patterns.02-07-2013
20130032850Light-Emitting Diode Mounted On Transparent Conductive Layers And Manufacturing Method Thereof - A light-emitting diode (LED) and manufacturing method thereof are disclosed. The LED includes a transparent substrate, a plurality of transparent conductive layers, a plurality of metal circuits, and a LED chip. The LED chip is suitable for emitting a light and a portion of the light emits toward the transparent substrate. The manufacturing method of LED includes the following steps. First, a transparent conductive layer is formed on the transparent substrate. Next, a conductive pattern is formed by etching transparent conductive layer. The intersection metal circuit is formed by disposing the metal on a portion of the transparent conductive layer. Finally, the LED chip is disposed on the metal circuit so that the LED chip is electrically connected to the metal circuit.02-07-2013
20130032848OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME - An optoelectronic device comprises a semiconductor stack comprising a first semiconductor layer, an active layer and a second semiconductor layer, a first electrode electrically connecting with the first semiconductor layer, a second electrode electrically connecting with the second semiconductor layer, wherein there is a smallest distance D02-07-2013
20130032846NON-REACTIVE BARRIER METAL FOR EUTECTIC BONDING PROCESS - A eutectic metal layer (e.g., gold/tin) bonds a carrier wafer structure to a device wafer structure. In one example, the device wafer structure includes a silicon substrate upon which an epitaxial LED structure is disposed. A layer of silver is disposed on the epitaxial LED structure. The carrier wafer structure includes a conductive silicon substrate covered with an adhesion layer. A layer of non-reactive barrier metal (e.g., titanium) is provided between the silver layer and the eutectic metal to prevent metal from the eutectic layer (e.g., tin) from diffusing into the silver during wafer bonding. During wafer bonding, the wafer structures are pressed together and maintained at more than 280° C. for more than one minute. Use of the non-reactive barrier metal layer allows the total amount of expensive platinum used in the manufacture of a vertical blue LED manufactured on silicon to be reduced, thereby reducing LED manufacturing cost.02-07-2013
20130032847DISTRIBUTED CURRENT BLOCKING STRUCTURES FOR LIGHT EMITTING DIODES - An LED device includes a strip-shaped electrode, a strip-shaped current blocking structure and a plurality of distributed current blocking structures. The current blocking structures are formed of an insulating material such as silicon dioxide. The strip-shaped current blocking structure is located directly underneath the strip-shaped electrode. The plurality of current blocking structures may be disc shaped portions disposed in rows adjacent the strip-shaped current blocking structure. Distribution of the current blocking structures is such that current is prevented from concentrating in regions immediately adjacent the electrode, thereby facilitating uniform current flow into the active layer and facilitating uniform light generation in areas not underneath the electrode. In another aspect, current blocking structures are created by damaging regions of a p-GaN layer to form resistive regions. In yet another aspect, current blocking structures are created by etching away highly doped contact regions to form regions of resistive contact between conductive layers.02-07-2013
20130032845HIGH TEMPERATURE GOLD-FREE WAFER BONDING FOR LIGHT EMITTING DIODES - A vertical GaN-based LED is made by growing an epitaxial LED structure on a silicon wafer. A silver layer is added and annealed to withstand >450° C. temperatures. A barrier layer (e.g., Ni/Ti) is provided that is effective for five minutes at >450° C. at preventing bond metal from diffusing into the silver. The resulting device wafer structure is then wafer bonded to a carrier wafer structure using a high temperature bond metal (e.g., AlGe) that melts at >380° C. After wafer bonding, the silicon is removed, gold-free electrodes (e.g., Al) are added, and the structure is singulated. High temperature solder (e.g., ZnAl) that is compatible with the electrode metal is used for die attach. Die attach occurs at >380° C. for ten seconds without melting the bond metal or otherwise damaging the device. The entire LED contains no gold, and consequently is manufacturable in a high-volume gold-free semiconductor fabrication facility.02-07-2013
20130075781LED WITH HONEYCOMB RADIATING HEAT DISSIPATION DEVICE - An LED with a honeycomb radiating heat dissipation device includes a sapphire substrate, an LED epitaxy layer on the sapphire substrate, a thermally conductive binding layer, an intermediate heat dissipation layer, a base substrate and a honeycomb-like heat dissipation device. The thermally conductive binding layer is provided to bind the sapphire substrate and the intermediate heat dissipation layer. The honeycomb-like heat dissipation device is in contact with the base substrate and includes a heat dissipation body and holes, each having a sidewall covered with a thermally radiative heat dissipation film. The intermediate heat dissipation layer and the thermally radiative heat dissipation film is made from a mixture of metal and nonmetal and has a microscopic surface structure with specific crystal, so as to provide high efficiency of heat dissipation by thermal radiation.03-28-2013
20130075779LIGHT EMITTING DIODE WITH MULTIPLE TRANSPARENT CONDUCTIVE LAYERS AND METHOD FOR MANUFACTURING THE SAME - A light emitting diode includes a first-type semiconductor layer, an active layer, a second-type semiconductor layer and a transparent, electrically conductive layer formed in sequence. The transparent, electrically conductive layer includes a first transparent, electrically conductive layer on the second-type semiconductor layer and a second transparent, electrically conductive layer on the first transparent, electrically conductive layer. Both the first and second transparent, electrically conductive layers are made of indium tin oxide, while the first transparent, electrically conductive layer has a smaller thickness. During formation of the transparent, electrically conductive layer, a mass flow of introduced oxygen gas to the first transparent conductive layer is lower than that to the second transparent conductive layer.03-28-2013
20130075778LIGHT-TRANSMITTING METAL ELECTRODE, ELECTRONIC APPARATUS AND LIGHT EMITTING DEVICE - According to one embodiment, a light-transmitting metal electrode includes a metal layer. The metal layer is provided on a major surface of a member and includes a metal nanowire and a plurality of openings formed with the metal nanowire. The thin layer includes a plurality of first straight line parts along a first direction and a plurality of second straight line parts along a direction different from the first direction. A maximum length of the first line parts along the first direction and a maximum length of the second line parts along the direction different from the first direction are not more than a wave length of visible light. A ratio of an area of the metal layer viewed in a normal direction of the surface to an area of the metal layer viewed in the normal direction is more than 20% and not more than 80%.03-28-2013
20130075777Opto-electric device and method for manufacturing the same - A thin-film optoelectric device is disclosed comprising 03-28-2013
20100032707SEMICONDUCTOR DEVICE AND METHOD FOR MAKING THE SAME - A semiconductor device includes a semiconductor element, an electrode formed on the semiconductor element, and a protective member covering the semiconductor element. The protective member is formed with a through-hole facing the electrode. In the through-hole, a wiring pattern is formed to be electrically connected to the electrode.02-11-2010
20100032706WAFER LEVEL LED PACKAGE STRUCTURE FOR INCREASING CONDUCTIVE AREA AND HEAT-DISSIPATING AREA AND METHOD FOR MAKING THE SAME - A wafer level LED package structure includes a light-emitting unit, a first conductive unit, a second conductive unit and an insulative unit. The light-emitting unit has a light-emitting body, a positive conductive layer and a negative conductive layer formed on the light-emitting body, and a first insulative layer formed between the positive conductive layer and the negative conductive layer. The first conductive unit has a first positive conductive layer formed on the positive conductive layer and a first negative conductive layer formed on the negative conductive layer. The second conductive unit has a second positive conductive layer formed on the first positive conductive layer and a second negative conductive layer formed on the first negative conductive layer. The insulative unit has a second insulative layer formed on the first insulative layer and disposed between the second positive conductive layer and the second negative conductive layer.02-11-2010
20100032705LIGHT EMITTING DIODE PACKAGE AND METHOD OF MANUFACTURING THE SAME - Provided is an LED package including a metal substrate that has one or more via holes formed therein; an insulating layer that is formed on a surface of the metal substrate including inner surfaces of the via holes; a plurality of metal patterns that are formed on the insulating layer and are electrically isolated from one another; and an LED chip that is mounted on a metal pattern among the plurality of metal patterns.02-11-2010
20130075780RADIATION HEAT DISSIPATION LED STRUCTURE AND THE MANUFACTURING METHOD THEREOF - Disclosed are a radiation heat dissipation LED structure and a manufacturing method thereof. The radiation heat dissipation LED structure includes a sapphire substrate, an LED epitaxy layer, a base substrate, a radiation heat dissipation film, and a thermally conductive binding layer provided between the sapphire substrate and the radiation heat dissipation film to bind the sapphire substrate and the base substrate. The radiation heat dissipation film consists of a mixture of metal and nonmetal. The surface of the film has a microscopic structure with crystal, which has high efficiency of heat dissipation and can fast transfer the heat generated by the LED epitaxy layer outwards through the base substrate by thermal radiation. Therefore, the working temperature of the LED epitaxy layer is greatly reduced so as to improve the efficiency of light emitting and the lifetime.03-28-2013
20090315062 Light Emitting Diode Submount With High Thermal Conductivity For High Power Operation - This invention relates to the thermal management, extraction of light, and cost effectiveness of Light Emitting Diode, or LED, electrical circuits. An integrated circuit LED submount is described, for the packaging of high power LEDs. The LED submount provides high thermal conductivity while preserving electrical insulation. In particular, a process is described for anodizing a high thermal conductivity aluminum alloy sheet to form a porous aluminum oxide layer and a non-porous aluminum oxide layer. This anodized aluminum alloy sheet acts as a superior electrical insulator, and also provides surface morphology and mechanical properties that are useful for the fabrication of high-density and high-power multilevel electrical circuits.12-24-2009
20100044747SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device (A02-25-2010
20100044746CARRIER AND OPTICAL SEMICONDUCTOR DEVICE BASED ON SUCH A CARRIER - A method for providing, on a carrier (02-25-2010
20100044745OPTICAL SEMICONDUCTOR DEVICE MODULE WITH POWER SUPPLY THROUGH UNEVEN CONTACTS - In an optical semiconductor device module constructed by an optical semiconductor device having a light emitting portion on its top surface, a mounting substrate adapted to mount the optical semiconductor device thereon, at least one wiring pattern layer formed on a front surface of the mounting substrate, and at least one power supplying portion in contact with the wiring pattern layer, at least one of the power supplying portion and the wiring pattern layer is uneven.02-25-2010
20100044744LIGHT EMITTING DIODE HAVING EXTENSIONS OF ELECTRODES FOR CURRENT SPREADING - Disclosed is a light emitting diode having extensions of electrodes for improving current spreading. The light emitting diode includes a lower semiconductor layer, an upper semiconductor layer and an active layer, which are formed on a substrate. The upper semiconductor layer is located above the lower semiconductor layer such that edge regions of the lower semiconductor layer are exposed, and has indents indented in parallel with diagonal directions from positions in the edge regions adjacent to corners of the substrate in a clockwise or counterclockwise direction to expose the lower semiconductor layer. The indents have distal ends spaced apart from each other. Meanwhile, a lower electrode is formed on the exposed region of the lower semiconductor layer corresponding to the first corner of the substrate, and an upper electrode is formed on a transparent electrode layer on the semiconductor layer. Lower extensions extending from the lower electrode are formed on the exposed edge regions of the lower semiconductor layer and on the regions of the lower semiconductor layer exposed through the indents. An upper extension extending from the upper electrode are formed on the transparent electrode layer. The lower and upper extensions improve current spreading, particularly, in a light emitting diode with a large area.02-25-2010
20100044743Flip chip light emitting diode with epitaxial strengthening layer and manufacturing method thereof - A flip chip light emitting diode with an epitaxial strengthening layer and a manufacturing method thereof are revealed. The flip chip light emitting diode with an epitaxial strengthening layer includes an epitaxial structure connected with an epitaxial strengthening layer while the manufacturing method of the flip chip light emitting diode with an epitaxial strengthening layer is mainly to form an epitaxial strengthening layer on the epitaxial structure. Thus the epitaxial structure of the flip chip light emitting diode is strengthened so as to prevent breakage of the epitaxial structure while removing a substrate by laser assisted lift-off technique or other techniques. Moreover, the thermal expansion coefficient of the epitaxial strengthening layer matches well with thermal expansion coefficient of the epitaxial structure. Thus after being treated with cyclic heating, there is no stress caused by unmatched thermal expansion coefficient. Therefore, reliability of the flip chip light emitting diode with an epitaxial strengthening layer is improved.02-25-2010
20100044742LIGHT EMITTING DIODE MODULE - The present invention relates to a light emitting diode module capable of facilitating the connection between light emitting diode modules.02-25-2010
20100044741LIGHTING DEVICE - A fighting device of the present invention includes light emitting unit 02-25-2010
20090159920Nitride semiconductor light emitting device and manufacturing method of the same - There is provided a nitride semiconductor light emitting device including: a light emitting structure including n-type and p-type nitride semiconductor layers and an active layer disposed therebetween; n- and p-electrodes electrically connected to the n-type and p-type nitride semiconductor layers, respectively; and an n-type ohmic contact layer disposed between the n-type nitride semiconductor layer and the n-electrode and including a first layer and a second layer, the first layer formed of an In-containing material, and the second layer disposed on the first layer and formed of a transparent conductive oxide. The nitride semiconductor light emitting device including the n-electrode exhibits high light transmittance and superior electrical characteristics. Further, the nitride semiconductor light emitting device can be manufactured by an optimal method to ensure superb optical and electrical characteristics.06-25-2009
20090159919LED LIGHTING APPARATUS WITH SWIVEL CONNECTION - Disclosed is a LED lighting apparatus with one or more swivel connections. The LED lighting apparatus includes a housing with at least one end, at least one light emitting diode extending along the housing and at least one end cap. The end cap has an opening with a sidewall to cap the end of the housing and a surface opposite the opening and spanning the sidewall. At least two pin connectors extend from the surface and are connectable to a standard fluorescent or incandescent light fixture. Various configurations are described such that the housing will rotate within the end caps with application of a rotational force after connection of the pin connectors to the light fixture to adjust the light output direction of the LED lighting apparatus.06-25-2009
20130043504LED MODULE02-21-2013
20100109041HIGH EFFICIENCY LED STRUCTURE - A high efficiency light-emitting diode (LED) structure is provided, which mainly includes a die cup. The die cup is respectively provided with an anode and a cathode at two sides there below, and is mounted on a substrate. A plurality of dies is disposed above the die cup. The dies are connected in series via a gold wire and meanwhile sealed with a molding compound. Pins of the dies are connected to the anode and the cathode. A drive current that is lower than one half of a maximum rated current value is applied to the LED structure, thereby improving the luminescent efficiency.05-06-2010
20100109042LIGHT EMITTING DEVICE - To provide a low-profile light emitting device which can be manufactured with good productivity without worsening mold releasability and which can prevent bending an end terminal of a lead electrode during handling of the light emitting device. A light emitting device comprising: a light emitting element; and a package having lead electrodes to be connected to the light emitting element and an opening in front thereof for emitting a light emitted from the light emitting element in which parts of the lead electrodes project out of the package and are bent so that end portions thereof are located on side surfaces of the package, wherein side surfaces have a first face adjacent to a rear surface of the package, on which the end portions are located, a second face having a plane direction different from the first face, and a third face adjacent to a front surface of the package, having a plane direction different from the second face.05-06-2010
20130134474LIGHT EMITTING ELEMENT, METHOD FOR MANUFACTURING SAME, AND LIGHT EMITTING DEVICE - Organic light-emitting elements each have the following structure: a transparent anode, a functional layer including a charge injection layer and an organic light-emitting layer, and a transparent cathode are layered on a substrate in the stated order; a bank defines a formation area of the organic light-emitting layer; the charge injection layer is a metal oxide layer formed by oxidizing an upper surface portion of the anode composed of the metal layer, and a portion of the charge injection layer that is positioned under the area is depressed so as to form a recess; and the upper peripheral edge of the recess is covered with a covering portion of the bank.05-30-2013
20090001401Semiconductor Light Emitting Diode - Provided is a semiconductor light emitting diode, in which a plurality of upper electrodes is formed on a surface of an upper doping layer or an emission layer and at least one lower electrode is formed on a surface of a lower doping layer or a substrate in a silicon-based light emitting diode or a nitride-based light emitting diode to enhance a spreading characteristic of current applied to the electrodes, thereby maximizing an emitting area of the emission layer and inducing an emission having a uniform intensity on an entire surface of the emission layer to further enhance the luminous efficiency of the light emitting diode.01-01-2009
20100320497LED bracket structure - The present invention relates to a new LED bracket structure and in particular to a bracket that adopts the structure in which the upper section and lower section are made of different materials, the main improvements including: the bottom of the bracket is provided with a groove for embedding and fixing of a conductive pin, the bracket may be made of other conductive materials such as iron plated with silver, and the conductive pin may be made of red brass and bronze of good conductive performance so as to reduce the consumption of copper in this structure and the consumption of precious metal copper significantly.12-23-2010
20130026528WATERPROOF TRANSPARENT LED SHIELD STRUCTURE - A waterproof transparent LED shield structure has a singular LED component with a circuit board and an LED lighting component, with the circuit board connected with protruding electric pins. A hard transparent shield has a base board and a shield. The base board covers the front side of the circuit board, and is configured with a rim to rest against the edge of the circuit board. The shield has a circular side wall and a top end and encloses the LED lighting component. A soft waterproof covering body covers and is attached to the outside of the LED component and hard transparent shield. The soft waterproof covering has a seat part and a projecting part. The seat covers the circuit board, the connecting end of the electric pins and the base board and rim, and the protruding end of the electric pins extends out of the seat part.01-31-2013
20130082298LED LIGHT DISPOSED ON A FLEXIBLE SUBSTRATE AND CONNECTED WITH A PRINTED 3D CONDUCTOR - An example includes subject matter (such as an apparatus) comprising a planar substrate including a first surface that is planar, at least one bare light emitting diode (“LED”) die coupled to the substrate and conductive ink electrically coupling the at least one bare LED die, wherein the conductive ink is disposed on the substrate and extends onto a surface of the LED that is out-of-plane from the first surface.04-04-2013
20130082299LIGHT EMITTING DEVICE - Disclosed is a light emitting device including a substrate, a light emitting structure arranged on the substrate, the light emitting structure including a first semiconductor layer, a second semiconductor layer and an active layer arranged between the first semiconductor layer and the second semiconductor layer, a first electrode electrically connected to the first semiconductor layer, and a second electrode electrically connected to the second semiconductor layer, wherein the light emitting structure has a top surface including a first side and a second side which face each other, and a third side and a fourth side which face each other.04-04-2013
20080303052LIGHT EMITTING DIODE PACKAGE HAVING MULTIPLE MOLDING RESINS - Disclosed is a light emitting diode (LED) package having multiple molding resins. The LED package includes a pair of lead terminals. At least portions of the pair of lead terminals are embedded in a package main body. The package main body has an opening through which the pair of lead terminals is exposed. An LED die is mounted in the opening and electrically connected to the pair of lead terminals. A first molding resin covers the LED die. A second molding resin with higher hardness than the first molding resin covers the first molding resin. Therefore, stress to be imposed on the LED die can be reduced and the deformation of the molding resins can be prevented.12-11-2008
20130087824OPTO-ELECTRICAL DEVICE AND METHOD FOR MANUFACTURING THEREOF - An opto-electrical device is provided that comprises a cover (04-11-2013
20130087826DIODE PACKAGE HAVING IMPROVED LEAD WIRE AND MANUFACTURING METHOD THEREOF - Disclosed is a diode package, wherein an upper lead wire and a lower lead wire are each formed in a long and flat plate and each have a first stage and a second stage, both stages being opposite from each other, the upper side of the diode chip is attached to the lower side of the first stage of the upper lead wire, the lower side of the diode chip is attached to the lower side of the first stage of the upper lead wire, and the second stage of the upper lead wire and the second stage of the lower lead wire are led out in the lateral direction of the molding compound. Furthermore, the first stage of the upper lead wire has a hemispherical contact groove which protrudes downward, and the hemispherical contact groove has a through hole in the center thereof.04-11-2013
20130087825LIGHT-REFLECTIVE ANISOTROPIC CONDUCTIVE ADHESIVE AND LIGHT EMITTING DEVICE - A light-reflective anisotropic conductive adhesive used for anisotropic conductive connection of a light-emitting element to a wiring board includes a thermosetting resin composition containing a silicone resin and a curing agent, conductive particles and light-reflective insulating particles. The light-reflective insulating particle is at least one kind of inorganic particles selected from the group consisting of titanium oxide, boron nitride, zinc oxide, silicon oxide, and aluminum oxide. The silicone resin is a glycidyloxyalkyl-alicyclic alkyl-modified organopolysiloxane.04-11-2013
20130049061LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A light-emitting device includes an element mounting substrate, a light-emitting element on the element mounting substrate, a case formed around the light-emitting element and having an opening on a light extraction side of the light-emitting device, and a sealing material filled in the opening of the case to seal the light-emitting element. The element mounting substrate includes an uneven portion configured to firmly attach the element mounting substrate to the case or the sealing material.02-28-2013
20120181574LIGHT EMITTING DEVICE - A light emitting device includes a semiconductor package, and a mounting board having first and second wiring components respectively connected to first and second conduction members of the semiconductor package. The semiconductor package includes: a light emitting element; a first conduction member, on one side of which the light emitting element is placed; and a second conduction member whose surface area is smaller than that of the first conduction member, the other side of the first and second conduction members, forms the lower face of the semiconductor package. The mounting board includes: a narrow part and a wide part wider than the narrow part, which are formed on the first and second wiring components. At least the narrow part is joined to the first and second conduction members, and the first wiring component has a recess in its interior.07-19-2012
20120181573TRANSPARENT CONDUCTIVE OXIDES HAVING A NANOSTRUCTURED SURFACE AND USES THEREOF - The present invention provides a transparent conductive oxide (TCO) having a modified, more specifically, a nanostructured upper surface, and such a TCO when further comprising a layer of a metal or an alloy thereof deposited on said nanostructured upper surface. The latter can be applied in optoelectronic devices such as organic light-emitting diode (OLED) devices; photovoltaic cells such as organic thin film (OPV) solar cells, compound semiconductor thin film solar cells, dye sensitized solar cells (DSSCs); and photochemical water splitting devices.07-19-2012
20120181572SEMICONDUCTOR LIGHT EMITTING DEVICE - An excellent light emitting element capable of improving problems caused by a material having high light-reflectivity and susceptible to electromigration, especially Al used for the electrode. FIG. 07-19-2012
20120181571ADHESIVE FILM FOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING LED PACKAGE USING THE SAME - Provided is an adhesive film for an LED chip, including: a double-sided adhesive layer having the LED chip adhered to an upper surface thereof and a lead frame adhered to a lower surface thereof; an ultraviolet (UV) cured layer adhered to one surface of the double-sided adhesive layer; and upper and lower cover layers respectively adhered to faces exposed to the exterior of the double-sided adhesive layer and the UV cured layer.07-19-2012
20120181570SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF - A semiconductor light emitting device and a fabrication method thereof are provided. The semiconductor light emitting device includes: a light-transmissive substrate including opposed first and second main planes and having prominences and depressions formed on at least one of the first and second main planes thereof; a light emitting structure formed on the first main plane of the substrate and including a first conductive semiconductor layer, an active layer, and a second conductive layer; a first electrode structure connected to the first conductive semiconductor layer; a second electrode structure connected to the second conductive semiconductor layer.07-19-2012
20120181569LIGHT-EMITTING DEVICE PACKAGE - A light-emitting device package including: a substrate including a first surface and a second surface; a light-emitting chip mounted on the first surface; and an electrode pad portion that is disposed on the second surface and electrically connects the light-emitting chip to an external device, wherein the electrode pad portion has a shape with rotational symmetry with respect to a predetermined angle when a normal line running through a center of the second surface is used as a rotation axis.07-19-2012
20090045431SEMICONDUCTOR LIGHT-EMITTING DEVICE HAVING A CURRENT-BLOCKING LAYER FORMED BETWEEN A SEMICONDUCTOR MULTILAYER FILM AND A METAL FILM AND LOCATED AT THE PERIPHERY., METHOD FOR FABRICATING THE SAME AND METHOD FOR BONDING THE SAME - A light-emitting device includes an element structure including at least two semiconductor layers having mutually different conductivity types. A transparent p-side electrode of ITO is formed on the element structure. A bonding pad is formed on a region of the p-side electrode. An n-side electrode made of Ti/Au is formed on the surface of the element structure opposite to the p-side electrode. A metal film made of gold plating with a thickness of about 50 μm is formed, using an Au layer in the n-side electrode as an underlying layer.02-19-2009
20090045430LIGHT EMITTING ELEMENT - A heat radiation structure of a light emitting element has leads, each lead having a plurality of leg sections, and a light emitting chip mounted on any one of the leads. The present invention can provide a high-efficiency light emitting element, in which a thermal load is reduced by widening a connecting section through which a lead and a chip seating section of the light emitting element are connected, and the heat generated from a heat source can be more rapidly radiated to the outside. Further, the present invention can also provide a high-efficiency light emitting element, in which heat radiation fins are formed between a stopper and a molding portion of a lead of the light emitting element so that natural convection can occur between the heat radiation fins, and an area in which heat radiation can occur is widened to maximize a heat radiation effect.02-19-2009
20090045428POLARLESS SURFACE MOUNTING LIGHT EMITTING DIODE - A polarless surface mounting light emitting diode comprises a substrate having; an upper surface of the substrate being etched with four independent metal thin film block; an lower surface of the substrate being formed with two independent metal thin film block; two ends of the substrate being formed with electroplating through holes; a plurality of metal thin films adhered upon the upper and lower surfaces of the substrate; at least one light emitting assembly, each light emitting assembly being formed by the chip resistor and the chip light emitting diode; and a package layer. The connection of the polarless surface mounting light emitting diode of the present invention is not limited by the polarity. Any end of the polarless surface mounting light emitting diode can be connected to positive electrode or negative electrode.02-19-2009
20130049062Light-Emitting Device - To provide a highly reliable light-emitting device with less occurrence of cracks in a sealant bonding two facing substrates together. In a light-emitting device, a first substrate including a light-emitting unit, and a second substrate are bonded to each other with glass frit. A wiring in the area overlapping with a sealing material formed by melting and solidifying glass frit may be formed of a conductive material having a linear thermal expansion coefficient close to that of a substrate material. More specifically, the difference in the linear thermal expansion coefficient between the conductive material and the substrate material is 5 ppm/K or less at a temperature of 0° C. to 500° C.02-28-2013
20130049059SOLID STATE TRANSDUCER DEVICES, INCLUDING DEVICES HAVING INTEGRATED ELECTROSTATIC DISCHARGE PROTECTION, AND ASSOCIATED SYSTEMS AND METHODS - Solid state transducer devices having integrated electrostatic discharge protection and associated systems and methods are disclosed herein. In one embodiment, a solid state transducer device includes a solid state emitter, and an electrostatic discharge device carried by the solid state emitter. In some embodiments, the electrostatic discharge device and the solid state emitter share a common first contact and a common second contact. In further embodiments, the solid state lighting device and the electrostatic discharge device share a common epitaxial substrate. In still further embodiments, the electrostatic discharge device is positioned between the solid state lighting device and a support substrate.02-28-2013
20130049060LIGHT-EMITTING DIODE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A light-emitting diode structure. In one embodiment, the light-emitting diode structure includes an insulation substrate, a light-emitting structure having a first electrical semiconductor layer, a light-emitting layer, and a second electrical semiconductor layer successively stacked on the insulating substrate and containing a first electrode pad region, a second electrode pad region, and a light-emitting region, a first and second electrical electrode pad respectively disposed on the first and second electrode pad region, a second electrical conducting finger disposed on the light-emitting structure and connected to the second electrical electrode pad and the second electrical semiconductor layer, and a first insulating layer for insulating the second electrical conducting finger from the first electrical semiconductor layer and the light-emitting layer. A bottom surface of the second electrical electrode pad is located below an upper surface of the second electrical semiconductor layer.02-28-2013
20100133580LIGHT EMITTING DIODE PACKAGE STRUCTURE AND CONDUCTIVE STRUCTURE AND MANUFACTURING METHOD THEREOF - A light emitting diode package structure includes a frame, a light emitting diode chip electrically coupled to the frame, an upper packing portion covering the light emitting diode chip on the frame, and a lower packing portion circumferentially disposed on the frame for fixation and next to the upper packing portion. Lights from the light emitting diode chip are outwardly emitted through the upper packing portion. The lower packing portion is extended from and partially covered by the upper packing portion.06-03-2010
20100133581TOP CONTACT LED THERMAL MANAGEMENT - An LED having enhanced heat dissipation is disclosed. For example, an LED die can have extended bond pads that are configured to enhance heat flow from an active region of the LED to a lead frame. A heat transmissive substrate can further enhance heat flow away from the LED die. By enhancing heat dissipation, more current can be used to drive the LED. The use of more current facilitates the production of brighter LEDs.06-03-2010
20090315066Electro-Optical Device - An object of the present invention is to realize a numerical aperture higher than that of a pixel having a conventional construction by using a pixel circuit having a novel construction in an electro-optical device. Therefore, it is utilized that the electric potential of a gate signal line in a row except for an i-th row is set to a constant electric potential in a period except for when a gate signal line (12-24-2009
20090315065NITRIDE SEMICONDUCTOR LIGHT-EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME - Provided are a nitride semiconductor light-emitting diode including an n-type nitride semiconductor layer, a p-type nitride semiconductor layer and a nitride semiconductor active layer set between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer, and having a first transparent electrode layer containing indium tin oxide and a second transparent electrode layer containing tin oxide on a surface of the p-type nitride semiconductor layer opposite to the side provided with the nitride semiconductor active layer and a method of manufacturing the nitride semiconductor light-emitting diode.12-24-2009
20100264454SEMICONDUCTOR LIGHT EMITTING DEVICE GROWING ACTIVE LAYER ON TEXTURED SURFACE - In accordance with embodiments of the invention, at least partial strain relief in a light emitting layer of a III-nitride light emitting device is provided by configuring the surface on which at least one layer of the device grows such that the layer expands laterally and thus at least partially relaxes. This layer is referred to as the strain-relieved layer. In some embodiments, the light emitting layer itself is the strain-relieved layer, meaning that the light emitting layer is grown on a surface that allows the light emitting layer to expand laterally to relieve strain. In some embodiments, a layer grown before the light emitting layer is the strain-relieved layer. In a first group of embodiments, the strain-relieved layer is grown on a textured surface.10-21-2010
20100264451Light Emitting Diode with High Power - A light emitting diode includes a base, a dispersing member, a chip, a pole, a cover, an electrode, and a lens. The base is capable of conducting heat and insulated from electricity. The base has a first surface and a second surface opposite to the first surface. The dispersing member is disposed on a first surface of the base. The chip is disposed on a second surface of the base. The pole runs through the base, and two ends of the pole are connected to the dispersing member and the chip correspondingly. The cover to allow light to run therethrough is disposed on the second surface of the base and covers the chip. The electrode is disposed on the second surface the base and electrically connected to a circuit inside the base. The circuit electrically connected to the chip. The lens seals the cover.10-21-2010
20090309123LIGHT-EMITTING DEVICE - This application discloses alight-emitting diode device, comprising an epitaxial structure having a light-emitting layer, a first-type conductivity layer, and a second-type conductivity layer wherein the thicknesses of the first-type conductivity confining layer is not equal to the second-type conductivity confining layer and the light-emitting layer is not overlapped with the portion of the epitaxial structure corresponding to the peak zone of the wave intensity distribution curve along the direction of the epitaxy growth.12-17-2009
20120217534SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT - Disclosed is a semiconductor light emitting element (08-30-2012
20120217533SEMICONDUCTOR LIGHT EMITTING DEVICE WITH A CONTACT FORMED ON A TEXTURED SURFACE - A device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region. The semiconductor structure includes an n-contact region and a p-contact region. A cross section of the n-contact region comprises a plurality of first regions wherein portions of the light emitting layer and p-type region are removed to expose the n-type region. The plurality of first regions are separated by a plurality of second regions wherein the light emitting layer and p-type region remain in the device. The device further includes a first metal contact formed over the semiconductor structure in the p-contact region and a second metal contact formed over the semiconductor structure in the n-contact region. The second metal contact is in electrical contact with at least one of the second regions in the n-contact region.08-30-2012
20120217532RESIN COMPOSITION FOR OPTICAL SEMICONDUCTOR ELEMENT HOUSING PACKAGE, AND OPTICAL SEMICONDUCTOR LIGHT-EMITTING DEVICE OBTAINED USING THE SAME - The present invention relates to a resin composition for forming an insulating resin layer for optical semiconductor element housing package having a concave portion in which a metal lead frame and an optical semiconductor element mounted thereon are housed, in which the resin composition includes the following ingredients (A) to (D), and the ingredients (C) and (D) are contained in a blend ratio (C)/(D) of 0.26 to 3.0 as a weight ratio thereof: (A) an epoxy resin; (B) an acid anhydride curing agent; (C) a white pigment; and (D) an inorganic filler.08-30-2012
20120217531SEMICONDUCTOR LIGHT EMITTING DEVICE, SEMICONDUCTOR LIGHT EMITTING APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a stacked structure body and an electrode. The stacked structure body has a first conductivity type first semiconductor layer including a nitride-based semiconductor, a second conductivity type second semiconductor layer including a nitride-based semiconductor, and a light emitting layer provided between the first and second semiconductor layers. The electrode has first, second and third metal layers. The first metal layer is provided on the second semiconductor layer and includes silver or silver alloy. The second metal layer is provided on the first metal layer and includes at least one element of platinum, palladium, rhodium, iridium, ruthenium, osmium. The third metal layer is provided on the second metal layer. A thickness of the third metal layer along a direction from the first toward the second semiconductor layer is equal to or greater than a thickness of the second metal layer.08-30-2012
20110006335ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD FOR MANUFACTURING THE SAME - An organic light emitting diode (OLED) display includes a display substrate including an organic light emitting element, an encapsulation substrate arranged opposite to the display substrate and covering the organic light emitting element, a sealant disposed on the edge of the display substrate and the encapsulation substrate, and sealing the display substrate and the encapsulation substrate to each other; and a filler filling the space between the display substrate and the encapsulation substrate. One surface of at least one of the display substrate and the encapsulation substrate is contacted with the filler and is divided into a hydrophobic region and a hydrophilic region, and the hydrophobic region is positioned between the hydrophilic region and the sealant.01-13-2011
20130056786OPTICAL SEMICONDUCTOR DEVICE - An optical semiconductor device in which an optical semiconductor element connected to a silver-plated copper lead frame is sealed with an addition curing silicone resin composition, the addition curing silicone resin composition having (A) organopolysiloxane that contains an aryl group and an alkenyl group and does not contain an epoxy group; (B) organohydrogenpolysiloxane that has at least two hydrosilyl groups per molecule and an aryl group, the organohydrogenpolysiloxane that contains 30 mol % or more of an HR03-07-2013
20130056788PACKAGE FOR SEMICONDUCTOR LIGHT-EMITTING DEVICE AND LIGHT-EMITTING DEVICE - An object of the present invention is to provide a package from which a metal wiring and the like are difficult to be detached even when heat is generated from a semiconductor light-emitting element. This object is achieved with a package for a semiconductor light-emitting device comprising at least a molded resin containing (A) a SiH-containing polyorganosiloxane and (B) a filler, wherein an amount of SiH existing in the molded resin, after a heat treatment thereof at 200° C. for 10 minutes, is 20 to 65 μmol/g.03-07-2013
20130056787LIGHT EMITTING DEVICE - A light emitting device includes a package equipped on a front face with a window for installing a light emitting element, and outer lead electrodes that protrude from a bottom face of the package. The package has, on the bottom face, two side face convex components provided on the side face sides and a center convex component provided at a center. The outer lead electrodes are housed in a concave components defined by the side face convex components and the center convex component. The side face convex component has groove provided on the side face.03-07-2013
20130056789SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes a conductive support member; a light emitting structure under the conductive support member; an insulating layer including a protrusion disposed along an outer circumference of the light emitting structure; an electrode layer having an outer portion on the insulating layer and an inner portion on an inner portion of a top surface of the light emitting structure; and an electrode under the light emitting structure, wherein the inner portion of the electrode layer is protruded to the light emitting structure relative to the outer portion of the electrode layer, and wherein a portion of the insulating layer surrounds a portion of the light emitting structure.03-07-2013
20130056785LIGHT EMITTING DEVICE - A light emitting device includes a first section and a second section. The first section includes a first semiconductor layer doped with a first dopant, a second semiconductor layer doped with a second dopant, and a first active layer between the first and second semiconductor layers, and the second section includes a third semiconductor layer disposed on the first section, and the third semiconductor layer having an exposed region, a fourth semiconductor layer disposed on the third semiconductor layer except for the exposed region, and a second active layer between the third and fourth semiconductor layers, a first electrode disposed on the first semiconductor layer, a second electrode disposed on the fourth semiconductor layer and a third electrode inserted into a hole in the exposed region and disposed on the exposed region and the second semiconductor layer, the third electrode electrically connected to the second and third semiconductor layers.03-07-2013
20130056784Organic Light-Emitting Display Device and Method of Fabricating the Same - An organic electro-luminescence device capable of reducing a resistance of a cathode electrode to enhance brightness uniformity at each location within the device is described. The organic electro-luminescence device includes a bank layer formed over a substrate, the bank layer including a first, second, and third portion. A first electrode is formed between the first and second portions of the bank layer. An auxiliary electrode is formed where at least a part of the auxiliary electrode is formed between the second and third portions of the bank layer. A pattern is formed on the auxiliary electrode. An organic material layer formed between the first and second portions of the bank layer. A second electrode formed on the organic material layer, where at least a portion of the second electrode is electrically coupled to the auxiliary electrode.03-07-2013
20130056783THERMAL MANAGEMENT IN LARGE AREA FLEXIBLE OLED ASSEMBLY - A large area, flexible, OLED assembly has improved thermal management by providing a metal cathode of increased thickness of at least 500 nm. A thermal heat sink trace may be used as alternative or in conjunction with the increased thickness cathode where the trace leads from a central region of the OLED toward a perimeter region, or by other backsheet thermal management designs. External heat sinking, for example to a plate, fixture, etc. may be additionally used or in conjunction with the increased thickness cathode and/or backsheet design to provide further thermal management.03-07-2013
20120112238MICROELECTRONIC INTERCONNECT SUBSTRATE AND PACKAGING TECHNIQUES - A LED (Light Emitting Diode) substrate and packaging for a single diode or a diode array is described. The substrate includes an integral reflector(s) for the diode(s) in the form of a shaped cavity (or cavities) to house the diode die(s). The reflector cavity walls can optionally be plated with a reflective material and may include a molding material to serve as lens and sealant. Also described is a method for building a substrate with direct metal connection of low thermal path between a die and a bottom surface of the substrate. Another embodiment is for two electrical traces crossing each other without the need for a two layer interconnect structure. The substrate and reflector structures are built of aluminum—aluminum oxide composition applying a technology known in the art as ALOX technology. The resulting substrate and packaging afford the required electrical interconnections and enhanced thermal performance while maintaining excellent mechanical properties. The same substrate and packaging concepts can be applied for other high power devices requiring high thermal conductivity substrate and package.05-10-2012
20120112237LED PACKAGE STRUCTURE - The present invention provides an LED package structure which has a housing, a first electrode plate, a second electrode plate, a LED chip and a Zener diode. The LED chip is mounted in the recess, and a first electrode and a second electrode of the LED chip are electrically connected to the first electrode plate and the second electrode plate, respectively. The Zener diode is embedded in the housing, and a second electrode and a first electrode of the Zener diode is electrically connected to the first electrode plate and the second electrode plate, respectively. The Zener diode of the present invention is embedded in the housing, so that it can prevent from affecting the luminous flux of the LED chip.05-10-2012
20090078958Assembly of a heat dissipating base and a lead frame for a light emitting diode packaging device and method for making the same - A light emitting diode packaging device includes: a heat dissipating base; a light emitting dice mounted on the heat dissipating base; a lead frame coupled electrically to the light emitting dice and having a protruding wall defining a confining space for extension of a protruding part of the heat dissipating base therethrough; at least one retaining member provided on one of the protruding part of the heat dissipating base and the protruding wall of the lead frame to retain the lead frame to the heat dissipating base; and a molding material molded on the heat dissipating base and the lead frame.03-26-2009
20090267107Optoelectronic Semiconductor Component - An optoelectronic semiconductor component includes a basic body, at least one semiconductor chip arranged thereon, and an encapsulation embedding the at least one semiconductor chip and composed of a radiation-transmissive material with scattering particles. A radiation-transmissive covering layer with an absorber is applied to the encapsulation.10-29-2009
20090267106SEMICONDUCTOR LIGHT EMITTING DEVICE - Embodiments provides a semiconductor light emitting device, which comprises a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, a second conductive semiconductor layer under the active layer, a second electrode layer under the second conductive semiconductor layer, an insulator on one side of the second electrode layer, and a first electrode electrically connected to a one end of the first conductive semiconductor layer, on the insulator.10-29-2009
20090267105LED Device with Embedded Top Electrode - An LED device and a method of manufacturing, including an embedded top electrode, are presented. The LED device includes an LED structure and a top electrode. The LED structure includes layers disposed on a substrate, including an active light-emitting region. A top layer of the LED structure is a top contact layer. The top electrode is embedded into the top contact layer, wherein the top electrode electrically contacts the top contact layer.10-29-2009
20090267104LIGHT-EMITTING DIODE PACKAGE - An LED package including a lead-frame, at least an LED chip and an encapsulant is provided. The lead-frame has a roughened surface, the LED chip is disposed on the lead-frame and electrically connected to the lead-frame, and the roughened surface is suitable to scatter the light emitted from the LED chip. In addition, the encapsulant encapsulates the LED chip and a part of the lead-frame, and the rest part of the lead-frame is exposed out of the encapsulant.10-29-2009
20130062656THERMALLY ENHANCED OPTICAL PACKAGE - A thermally enhanced optical package includes a heat conducting module configured to dissipate the heat generated from an optical device, a plurality of insulating pads disposed on a heat conducting substrate, and at least one electrical conducting pad disposed on the insulating pads. The heat conducting module includes a heat conducting substrate and a plurality of heat conducting pillars, and the optical device is a light emitting diode chip or a light emitting diode die in the present embodiments. The thermally enhanced optical package is further characterized in a simple manufacturing procedure, including substantially an electrical or electroless plating process, a metal foil laminating process, a thick film printing process, and a patterning and etching process.03-14-2013
20130062657LIGHT EMITTING DIODE STRUCTURE AND MANUFACTURING METHOD THEREOF - A light-emitting diode structure is disclosed. A substrate has a first semiconductor layer, a light-emitting layer and a second semiconductor layer formed thereon. The first and second semiconductor layers are of opposite conductivity types. A first contact electrode is disposed between the first semiconductor layer and the substrate, and has a protruding portion extending into the second semiconductor layer. A barrier layer is conformally formed on the first contact electrode and exposes a top surface of the protruding portion. A current blocking member is disposed on the barrier layer and around at least a sidewall of the protruding portion. A second contact electrode is disposed between the first semiconductor layer and the first contact electrode, and in direct contact with the first semiconductor layer, wherein the second contact electrode is electrically insulated from the first contact electrode by the barrier layer.03-14-2013
20130062655HIGH THERMAL CONDUCTIVITY AND LOW DEGRADATION DIE ATTACH WITH DUAL ADHESIVE - A package for a light source, a semiconductor device, and methods of manufacturing the same are disclosed. In particular, a Light Emitting Diode (LED) dice is attached to a bonding pad of the light source package by two discrete types of different adhesives. One of the adhesives may be curable under exposure to Ultraviolet (UV) light and the other adhesive may be cured under thermal radiation, but is stable when exposed to UV light.03-14-2013
20130062658LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD - A light-emitting device comprises a substrate, a light-emitting layer, a wire formed on the substrate and supplying electric power to the light-emitting layer; a transition metal oxide layer formed on the substrate and over the wire; a bank formed on the transition metal oxide layer defining an opening over the wire; an interception layer formed on a portion of the transition metal oxide layer that is exposed through the opening and intercepting migrating fluorine; an organic layer formed on the interception layer and doped with an alkali metal; and an electrode formed on the organic layer, electrically connected to the wire via the organic layer, the interception layer, and the transition metal oxide layer, and providing the electric power supplied by the wire to the organic layer.03-14-2013
20110012166METHOD AND DEVICE FOR WAFER SCALE PACKAGING OF OPTICAL DEVICES USING A SCRIBE AND BREAK PROCESS - A multilayered integrated optical and circuit device. The device has a first substrate comprising at least one integrated circuit chip thereon, which has a cell region and a peripheral region. Preferably, the peripheral region has a bonding pad region, which has one or more bonding pads and an antistiction region surrounding each of the one or more bonding pads. The device has a second substrate with at least one or more deflection devices thereon coupled to the first substrate. At least one or more bonding pads are exposed on the first substrate. The device has a transparent member overlying the second substrate while forming a cavity region to allow the one or more deflection devices to move within a portion of the cavity region to form a sandwich structure including at least a portion of the first substrate, a portion of the second substrate, and a portion of the transparent member. The one or more bonding pads and the antistiction region are exposed while the one or more deflection devices is maintained within the portion of the cavity region.01-20-2011
20110012165LIGHT-EMITTING DIODE LIGHT BAR - In a light-emitting diode light bar of a light-emitting device, a first lead and a second lead are juxtaposed with a distance. A light-emitting diode crystal has a first electrode and a second electrode. Then, the first electrode is electrically fixed to the first lead. The second electrode is electrically connected to the second lead via a metallic lead. A light-transmitting body is used to package the light-emitting diode crystal and the metallic lead. Finally, via a hot pressing process, an insulating layer covers the first lead and the second lead. In this way, a light-emitting diode light bar is formed.01-20-2011
20110012164LIGHT-EMITTING ELEMENT AND METHOD OF FABRICATING THE SAME - Provided are a light-emitting element and a method of fabricating the same. The light-emitting element includes: a first pattern including conductive regions and non-conductive regions. The non-conductive regions are defined by the conductive regions. The light-emitting element also include an insulating pattern including insulating regions and non-insulating regions which correspond respectively to the conductive regions and non-conductive regions. The non-insulating regions are defined by the insulating regions. The light-emitting element further includes a light-emitting structure interposed between the first pattern and the insulating pattern. The light-emitting structure includes a first semiconductor pattern of a first conductivity type, a light-emitting pattern, and a second semiconductor pattern of a second conductivity type which are stacked sequentially. The light-emitting element also includes a second pattern formed in the non-insulating regions.01-20-2011
20110012163DEVICE HAVING A MULTILAYERED STRUCTURE AND METHOD OF FABRICATING THEREOF - The invention provides a multilayered device and the method for fabricating the same. The multilayered device comprises a substrate, a first layer deposited on the substrate, a second layer deposited on the first layer, and a third layer deposited on the second layer. The coverage of the second layer is determined by a rate of crystallization of the third layer. The rate of crystallization of the third layer is determined by measuring X-ray diffraction of the device.01-20-2011
20110012162LED PACKAGE WITH TOP-BOTTOM ELECTRODE - An LED package with an extended top electrode and an extended bottom electrode is made from a single metal sheet, one manufacturing process embodiment includes: preparing a piece of single metal sheet, forming a first metal and a coplanar second metal, mounting an LED on an inner end of the first metal, wire-bonding top electrode to an inner end of the second metal, encapsulating at least the LED and the bonding wire with a protection glue, bending an outer end of the first metal upward twice 90 degrees to form a top flat as an extended top electrode of the package, and bending an outer end of the second metal downward twice 90 degrees to form a bottom flat as an extended bottom electrode of the package.01-20-2011
20110012161MANUFACTURING METHODS AND INSTALLATION PROCEDURES WHICH CONFORMING TO THE INTERNATIONAL SAFETY CODES AND REGULATIONS FOR AC LED LAMP - An alternating-current (AC) light-emitting diode (LED) lamp conforming to international safety regulations and a method for making the same are provided, wherein the core technique involves a circuit board made of a thermally conductive insulation material on which traces are provided, a chip is soldered, and an LED lighting unit is encapsulated. After the LED lighting unit is encapsulated on the circuit board, exposed and electrically conductive portions of the traces or solder points on the circuit board are encapsulated with a thermally resistant insulation material. Furthermore, a thermally conductive insulation plate is provided between the circuit board and a metal housing, and the circuit board is secured in position by fasteners made of an insulation material. Thus, electric shock is effectively prevented which may otherwise result from high-voltage current passing from electrically conductive ends of the circuit board to a heat dissipation mechanism (the metal housing).01-20-2011
20090236628SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes: a conductive substrate; a semiconductor light emitting layer which includes a first semiconductor layer formed on one surface of the conductive substrate and having a first conductivity type, and a second semiconductor layer formed on the first semiconductor layer and having a second conductivity type opposite to the first conductivity type; first light emitting spots which are alternately arranged around a periphery of the semiconductor light emitting layer and emitting light to an exterior from the semiconductor light emitting layer; second light emitting spots having surfaces intersecting with the first light emitting spots and emitting light at an amount smaller than an amount of light emitted via the first light emitting spots; and wirings arranged along the second light emitting spots and electrically short circuiting an area between the first light emitting layer and the surfaces of the conductive substrate.09-24-2009
20090236627METHOD OF FORMING METAL WIRING - Provided is a method of forming metal wiring. The method includes forming a photosensitive film pattern on a substrate, hydrophobicizing at least part of the photosensitive film pattern, coating metal ink on the substrate having the photosensitive film pattern, forming a seed layer, and forming a metal layer. Alternatively, a trench is formed by using the photosensitive film pattern as a mask, and metal aerosol is sprayed to form the seed layer and then the metal layer. In this method, there is no need to form a metal thin film on the photosensitive film pattern when the seed layer is formed. As a result, less metal is wasted, which, in turn, significantly reduces manufacturing costs.09-24-2009
20090236626LED LAMP - An LED lamp includes a first heat sink, a second heat sink thermally contacting the first heat sink, and an LED module mounted on the first heat sink. The first heat sink comprises a plate and a plurality of first fins extending from the plate. The plate has a bare area on a top surface thereof. The LED module is mounted on the bare area and surrounded by the first fins of the first heat sink. The second heat sink comprises a base thermally contacting a bottom surface of the plate of the first heat sink and a plurality of second fins arranged at a bottom surface of the base of the second heat sink. Heat pipes are sandwiched between the plate and base of the first and second heat sinks.09-24-2009
20090236625LED DEVICE WITH CONDUCTIVE WINGS AND TABS - Apparatus for increased heat dissipation from a light-emitting diode (LED) die are provided. The apparatus may include a metal member thermally and electrically coupled to the LED die and having one or more wings for heat transfer away from the LED die and/or increased mechanical strength of the metal member. The wings may be flat, sloped, or tiered. For some embodiments, the wings may have holes in them in an effort to increase the structural integrity when combined with a housing, which made be composed of plastic or resin.09-24-2009
20130069104LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE LIGHT EMITTING DEVICE - Provided is a light emitting device capable of reducing light attenuation within the element and having high light extraction efficiency, and a method of manufacturing the light emitting device. The light emitting device has a light emitting element having a light transmissive member and semiconductor stacked layer portion, electrodes disposed on the semiconductor stacked layer portion in this order. The light emitting element has a first region and a second region from the light transmissive member side. The light transmissive member has a third region and a fourth region from the light emitting element side. The first region has an irregular atomic arrangement compared with the second region. The third region has an irregular atomic arrangement compared with the fourth region. The first region and the third region are directly bonded.03-21-2013
20130069103Light Emitting Assemblies And Portions Thereof - Apparatus may be provided including a high power light emitting diode (LED) unit, at least one printed circuit board, and an interfacing portion of a heat sink structure. The high power LED unit includes at least one LED die, at least one first lead and at least one second lead, and a heat sink interface. The at least one printed circuit board includes a conductive pattern configured to connect both the at least one first lead and the at least one second lead to a current source. The interfacing portion of the heat sink structure is that portion through which a majority of heat of the heat sink interface is transmitted. The interfacing portion is directly in touching contact with a majority of a heat transfer area of the heat sink interface.03-21-2013
20130069102SEMICONDUCTOR LIGHT-EMITTING DEVICE, LIGHT-EMITTING MODULE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light-emitting device includes a laminated body that is configured to emit light from a main surface thereof, first and second electrodes, each disposed on a surface of the laminated body that is opposite the main surface, a first terminal that is electrically coupled to the first electrode, has a concave edge but not a convex edge, and has at most three exposed sides, and a second terminal that is electrically coupled to the second electrode, has a concave edge but not a convex edge, and has at most three exposed sides.03-21-2013
20130069101METHOD FOR MANUFACTURING LED AND LED OBTAINED THEREBY - A method for manufacturing a light emitting diode is disclosed. Firstly, two leads each including a plateau are provided. A blocking layer is then formed on each plateau. A base is molded on the leads to embed the two leads therein, wherein the two blocking layer are exposed from the base. The blocking layers are removed from the plateaus so that the two plateaus are exposed. A light emitting chip is bonded on one plateau with a wire connecting the chip with the other plateau. Finally, an encapsulant is formed on the base to seal the chip and the wire.03-21-2013
20130069100REUSABLE HIGH POWER LED MODULE AND METHODS THEREOF - The present invention is directed to a reusable, single-source, high-power LED module utilizing a subset of components that may be quickly replaced in the field without tools when the useable life of an LED chip expires. The reusable LED module may be used with a variety of lamp assemblies to generate an even wider variety of light distributions. In particular, drive currents, color temperatures, LED bin codes, optical lenses, and lamp assemblies may be varied to achieve a desirable light distribution.03-21-2013
20100065880SILICONE LAMINATED SUBSTRATE, METHOD OF PRODUCING SAME, SILICONE RESIN COMPOSITION FOR PRODUCING SILICONE LAMINATED SUBSTRATE, AND LED DEVICE - A silicone laminated substrate, including a glass cloth, and a cured product of a silicone resin composition with which the glass cloth is filled and a surface of the glass cloth is coated, in which the silicone resin composition includes: (A) an organopolysiloxane having a resin structure consisting of specific siloxane units, (B) an organohydrogenpolysiloxane having a resin structure consisting of specific siloxane units, (C) a platinum group metal-based catalyst, and (D) a filler. The silicone laminated substrate exhibits excellent mechanical properties, flexibility and workability, has minimal surface tack, and is easy to handle. The silicone laminated substrate is produced by impregnating a glass cloth with the silicone resin composition that is dissolved or dispersed in a solvent, subsequently removing the solvent from the glass cloth by evaporation, and subjecting the composition impregnated into the glass cloth to heat curing under compression molding conditions. From the silicone laminated substrate that is used for an LED device, an LED device can be obtained that includes the substrate and an LED chip mounted on top of the substrate.03-18-2010
20120228665METHOD OF MANUFACTURING GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP - Provided are a method of manufacturing a gallium nitride-based compound semiconductor light-emitting device with a low driving voltage (VI) and high light outcoupling efficiency, a gallium nitride-based compound semiconductor light-emitting device, and a lamp. In the method of manufacturing the gallium nitride-based compound semiconductor light-emitting device, a transparent conductive oxide film (09-13-2012
20090008672LIGHT-EMITTING DEVICE, MANUFACTURING METHOD THEREOF, AND LAMP - There is provided a light-emitting device having high reliability and excellent light extraction efficiency, a manufacturing method thereof, and a lamp. A light-emitting device includes a transparent electrode, wherein a titanium oxide-based conductive film is used for at least one layer of said transparent electrode, an emission wavelength is within a range of 300 to 550 nm, and a photocatalytic reaction-prevention layer is formed so as to cover said titanium oxide-based conductive film.01-08-2009
20120068218THERMALLY EFFICIENT PACKAGING FOR A PHOTONIC DEVICE - The present disclosure provides a method of packaging for a photonic device, such as a light-emitting diode device. The packaging includes an insulating structure. The packaging includes first and second conductive structures that each extend through the insulating structure. A substantial area of a bottom surface of the light-emitting diode device is in direct contact with a top surface of the first conductive structure. A top surface of the light-emitting diode device is bonded to the second conductive structure through a bonding wire.03-22-2012
20130161681LED WITH VERSATILE MOUNTING WAYS - An LED includes a base, a first lead and a second lead mounted to the base, a light emitting chip electrically connected to the first lead and the second lead, and an encapsulant sealing the chip. The first lead and the second lead each include a first beam and a second beam connected to each other. Each of the first beam and the second beam has two opposite ends protruding beyond two opposite lateral faces of the base, respectively, for electrically connecting with a circuit board.06-27-2013
20130161682SEMICONDUCTOR LIGHT-EMITTING ELEMENT - There is provided a semiconductor light-emitting element which has an electrode structural body including a connection electrode and a wiring electrode connected to the connection electrode, the wiring electrode stretching along a surface of a semiconductor layered body while being in partial contact with the surface of the semiconductor layered body exposed from an opening formed on the insulation layer. The area of a contact region between the wiring electrode and the semiconductor layered body increases, from a connection end which is connected to the connection electrode, along a direction in which the wiring electrode stretches.06-27-2013
20120235206LIGHTING DEVICE AND METHOD FOR CONTACTING A LIGHTING DEVICE - A lighting device may include a printed circuit board, wherein the printed circuit board has wiring on at least one of the front side and the back side thereof, the respective wiring is covered by at least one potting layer, the lighting device furthermore has at least one electrically conductive punched bushing and the punched bushing extends through a potting layer at least to the wiring and contacts the wiring.09-20-2012
20120235205LIGHT EMITTING CHIP AND METHOD FOR MANUFACTURING THE SAME - A light emitting chip includes a substrate, a buffer layer, a cap layer and a light emitting structure. The buffer layer is formed on the substrate and includes a carbon nano tube structure substantially parallel to the substrate. The carbon nano tube structure is comprised of nitride semiconductor. The cap layer grows from the buffer layer. The light emitting structure is formed on the cap layer. The light emitting structure sequentially includes a first cladding layer connected to the cap layer, a light emitting layer, and a second cladding layer.09-20-2012
20130161680ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display apparatus includes a substrate, a first electrode on the substrate; an intermediate layer on the first electrode, the intermediate layer including an organic light-emitting layer; a second electrode on the intermediate layer, a first inorganic encapsulating layer on the second electrode, the first inorganic encapsulating layer defining a first groove formed therein; a first organic encapsulating layer that is in the first groove defined by the first inorganic encapsulating layer, the first organic encapsulating layer not extending beyond the first groove, and a second inorganic encapsulating layer on the first organic encapsulating layer.06-27-2013
20110042710SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device includes a lead frame, a semiconductor light-emitting element mounted on the top surface of the bonding region, and a case covering part of the lead frame. The bottom surface of the bonding region is exposed to the outside of the case. The lead frame includes a thin extension extending from the bonding region and having a top surface which is flush with the top surface of the bonding region. The thin extension has a bottom surface which is offset from the bottom surface of the bonding region toward the top surface of the bonding region.02-24-2011
20130207153SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes: a first conductivity type semiconductor layer; a light emission layer; a second conductivity type semiconductor layer; a conductive portion of a first polarity electrically connected to the first conductivity type semiconductor layer; and a conductive portion of a second polarity electrically connected to the second conductivity type semiconductor layer. At least one of the conductive portion of the first polarity and the conductive portion of the second polarity includes a plurality of separated electrode portions arranged on a light emission surface. The closer the positions of the separated electrode portions are to a center point of the light emission surface, the separated electrode portions are provided sparsely, and the farther the positions of the separated electrode portions are from a center point of the light emission surface, the separated electrode portions are provided densely.08-15-2013
20090065795TRANSPARENT CONDUCTIVE FILM ON P-TYPE LAYER FOR GAN-BASED LED AND METHOD FOR FABRICATING THE SAME - The present disclosure provides a transparent conductive film on P-type layer of GaN-based LED and a fabricating method thereof. The transparent conductive film is fabricated by Ni/ITO, Al/ITO or NiO/ITO. In one embodiment, the thickness of the Ni layer is 5 Å to 30 Å. The thickness of the Al layer is 5 Å to 30 Å. The thickness of the NiO layer is 5 Å to 40 Å. The thickness of the ITO layer is 1000 Å to 3000 Å. In one embodiment, the fabricating method comprises steps of evaporating one of Ni, Al and NiO layers on a P-type GaN layer, heat-treating a wafer on which the Ni or Al layer is evaporated, then evaporating an ITO layer on the surface of Ni, Al or NiO layer, and heat-treating the wafer on which Ni/ITO, Al/ITO or NiO/ITO layers are evaporated. The transparent conductive film can have high light transmittance within the range of visible light and low specific contact resistance.03-12-2009
20100032709SMD diode holding structure and package thereof - An SMD diode holding structure includes a plastic housing and a plurality of metal holders. Two ends of the plastic housing from a function area and a notch. The metal holder has a base portion and a connecting pin portion. The top and bottom surfaces of the base portion are exposed to the function area and the notch. The top surface of one base portion in the function area is connected with an LED chip, and the bottom surface of another base portion in the notch is connected with the anti-ESD chip. The LED chip, the anti-ESD chip, and the base portion are connected with a conductive wire. The function area is covered with a first sealing compound, and the notch is covered with a second sealing compound. Light emitted from the LED chip is uniformly reflected in the function area, and the brightness is uniform.02-11-2010
20110175134PACKAGE STRUCTURE AND LED PACKAGE STRUCTURE - A package structure includes a base unit, a pin unit and a housing unit. The base unit has a carrier member and a through hole penetrating through the carrier member, and at least one annular structure is formed in the through hole. The pin unit has a plurality of conductive pins disposed beside the carrier member. The housing unit has an annular housing encircling the carrier member to envelop one part thereof and connecting to the pin unit, and the annular housing is partially filled into the through hole to cover the annular structure. Therefore, the instant disclosure can increase the bonding force between the carrier member and the annular housing and retard external moisture to permeate through slits between the carrier member and the annular housing to intrude into the chip-mounting region, thus the reliability and the usage life are increased.07-21-2011
20100314654LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A light emitting device, which can be efficiently manufactured and maintain a stable light emitting property for a long period, is provided. The light emitting device comprises a first resin forming body including a periphery that forms a recess to house a light emitting element and a bottom that forms a bottom portion of the recess, and a second resin forming body which covers the light emitting element. The first resin forming body is composed of a thermosetting epoxy resin composite whose essential component is an epoxy resin. The bottom covers surfaces of lead frames excluding mounting regions of the light emitting element and wires. A thickness of the bottom is formed thinner than a thickness from the surface of the lead frames to a leading end of the light emitting element.12-16-2010
20110084305NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DIODE - A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 μm; and an n-electrode pad formed on the n-type nitride semiconductor layer.04-14-2011
20100096659SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - The invention is directed to providing a smaller semiconductor device having a light emitting element with a low manufacturing cost and a method of manufacturing the same. An adhesive layer 04-22-2010
20120187443LIGHT EMITTING CHIP AND METHOD FOR MANUFACTURING THE SAME - A light emitting chip includes a substrate, a buffer layer formed on the substrate and including a number of horizontally grown nitride nanostructures, a cap layer grows from a top of the nitride nanostructures, and a light emitting structure formed on the cap layer. The light emitting structure sequentially comprises a first semiconductor layer connected to the cap layer, a light emitting layer, and a second semiconductor layer.07-26-2012
20110227124LED Semiconductor Element Having Increased Luminance - An LED semiconductor element comprising at least one first radiation-generating active layer and at least one second radiation-generating active layer which is stacked above the first active layer in a vertical direction and is connected in series with the first active layer, wherein the first active layer and the second active layer are electrically conductively connected by means of a contact zone.09-22-2011
20110278639LED Package Structure - An LED package structure comprises an LED chip and a fuse electrically connected to the LED chip in series. The fuse has a low melting point such that the fuse melts under a high current to form an open circuit to prevent the high current from flowing through the LED chip.11-17-2011
20110278638SEMICONDUCTOR CHIP ASSEMBLY WITH POST/DIELECTRIC/POST HEAT SPREADER - A semiconductor chip assembly includes a semiconductor device, a heat spreader, a conductive trace and first and second adhesives. The heat spreader includes a first post, a second post and a dielectric base. The conductive trace includes a pad and a terminal. The semiconductor device is electrically connected to the conductive trace and thermally connected to the heat spreader. The first post extends from the dielectric base in a first vertical direction into a first opening in the first adhesive, the second post extends from the dielectric base in a second vertical direction into a second opening in the second adhesive and the dielectric base contacts and is sandwiched between and extends laterally from the posts. The conductive trace provides signal routing between the pad and the terminal.11-17-2011
20110278637LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF AND LIGHT EMITTING SYSTEM USING THE SAME - A light emitting device comprises a light emitting element having a first electrode and a second electrode, and a semiconductor member having a cavity in a principal surface thereof, inside which the light emitting element is mounted, and electrically connected to the light emitting element, wherein the semiconductor member is constructed as a voltage regulating diode for stabilizing a voltage supplied from the exterior. As a result, the light emitting element can be protected from a static electricity or a surge voltage flowed therein from the exterior, the entire size of the system can be remarkably reduced so as to simplify a structure thereof, and heat generated from the system can be effectively discharged to the exterior. In addition, by providing a reflection portion in the cavity, light emitted from the light emitting element can be efficiently condensed.11-17-2011
20110278636LIGHT EMITTING ELEMENT - A heat radiation structure of a light emitting element has leads, each lead having a plurality of leg sections, and a light emitting chip mounted on any one of the leads. The present invention can provide a high-efficiency light emitting element, in which a thermal load is reduced by widening a connecting section through which a lead and a chip seating section of the light emitting element are connected, and the heat generated from a heat source can be more rapidly radiated to the outside. Further, the present invention can also provide a high-efficiency light emitting element, in which heat radiation fins are formed between a stopper and a molding portion of a lead of the light emitting element so that natural convection can occur between the heat radiation fins, and an area in which heat radiation can occur is widened to maximize a heat radiation effect.11-17-2011
20110278635Method for producing electronic device substrate, method for manufacturing electronic device, electronic device substrate, and electronic device - A method for producing a substrate for an electronic device, that can improve light extraction efficiency, can easily produces and has high liability is provided. The method includes: a step of heat-melting a glass raw material or a glass to produce a molten glass; a forming step of continuously feeding the molten glass to a bath surface of a molten metal bathtub accommodating a molten metal to form a continuous glass ribbon 11-17-2011
20110278634LIGHT-EMITTING DEVICE AND LIGHTING APPARATUS - Disclosed is a light-emitting device including, a light-emitting structure including a first conductive semiconductor layer including at least a first region and a second region, and an active layer and a second conductive semiconductor layer formed in the first region, a first electrode formed on the first conductive semiconductor layer, and a second electrode formed on the second conductive semiconductor layer. Current spreading and drive voltage can be improved and luminous efficacy of the light-emitting device can be enhanced.11-17-2011
20110278631LIGHT EMITTING DIODE CHIP - A light emitting diode (LED) chip includes a first electrode and a second electrode. Each of the first and second electrodes includes several trunks with at least one branch extending from at least one of the trunk, and at least one conductive pad serially connecting the trunks. A distance between a distal end of the branch of the first electrode and the conductive pad of the second electrode is less than that between any of other portions of the branch of the first electrode and the conductive pad of the second electrode, to thereby avoid crowded electric current formed at the first electrode and the conductive pad of the second electrode to save power accordingly.11-17-2011
20110278633LED Light Bulb With Integrated Heat Sink - The use of an LED light source coupled with an integrated heat sink is described in this application. The most preferred embodiments of the present invention comprise an LED light source surrounded by a plurality of heat vanes, with each heat vane comprising a plurality of heat fins, all positioned to dissipate heat in an enclosure housing the LED light source. In at least some preferred embodiments of the present invention, a pair of waterproof tubes are used to house a pair of electrical conductors that are used to connect the LED light source to a power source. The most preferred embodiments of the present invention further comprise a single LED contained in a housing fitted with a compound parabolic concentrator configuration.11-17-2011
20110278632LIGHT EMITTING DEVICE AND ILLUMINATION DEVICE - According to one embodiment, a light emitting device includes a substrate, a light emitting element and connectors. The substrate has a surface and a back face, and power supply terminals are formed on the surface. The light emitting element is mounted on the surface of the substrate. The connector includes a contact portion coming into contact with, the power supply terminal on the surface side of the substrate and a connector terminal having a wire connection portion projecting on the back face side of the substrate, and a power supply wire is connected to the wire connection portion of the connector terminal.11-17-2011
20110278629LED THERMAL MANAGEMENT - Thermal management solutions for higher power LEDs. In accordance with embodiments, a heat sink, preferably copper, is connected directly to the thermal pad of an LED. Directly connecting the LED thermal pad to the copper heat sink reduces the thermal resistance between the LED package and the heat sink, and more efficiently conducts heat away from the LED through the copper heat sink. In embodiments, the copper heat sink is directly soldered to the LED thermal pad.11-17-2011
20120098025OPTOELECTRONIC COMPONENT - An optoelectronic component includes a semiconductor body and a carrier substrate connected to the semiconductor body with a solder joint, wherein the carrier substrate includes first and second apertures, through which first and second electrically conductive connecting layers are guided from a first primary surface of the carrier substrate facing away from the semiconductor body to a second primary surface of the carrier substrate facing away from the semiconductor body, the carrier substrate made of a semiconductor material and having side flanks, which run obliquely to the primary surfaces at least in a first partial region, wherein the side flanks are provided with an electrically insulating layer in the first partial region.04-26-2012
20120098022PACKAGING STRUCTURE AND METHOD FOR OLED - The present invention discloses a packaging structure and method for organic light emitting devices, in which the packaging structure comprises a substrate; an OLED device, which disposing on the substrate; a first transparent protection layer, which forming on the OLED device; and a second transparent protection layer, which forming on the first transparent protection layer.04-26-2012
20110133241LIGHT EMITTING DEVICE - Disclosed are a light emitting device, a light emitting device package, a lighting system and a manufacturing method of light emitting device. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second conductive semiconductor layers; a first ohmic layer over the light emitting structure; and a second ohmic layer including a pattern over the first ohmic layer.06-09-2011
20120181568MICRO-INTERCONNECTS FOR LIGHT-EMITTING DIODES - The present disclosure provides a method of fabricating a light emitting diode (LED) package. The method includes bonding a plurality of separated light emitting diode (LED) dies to a substrate, wherein each of the plurality of separated LED dies includes an n-doped layer, a quantum well active layer, and a p-doped layer; depositing an isolation layer over the plurality of separated LED dies and the substrate; etching the isolation layer to form a plurality of via openings to expose portions of each LED die and portions of the substrate; forming electrical interconnects over the isolation layer and inside the plurality of via openings to electrically connect between one of the doped layers of each LED die and the substrate; and dicing the plurality of separated LED dies and the substrate into a plurality of LED packages.07-19-2012
20090008670LED packaging structure with aluminum board and an LED lamp with said LED packaging structure - An LED lamp is provided. The LED lamp has an aluminum board, a semiconductor substrate, at least a LED chip, a metal layer structure, and heat sink. The aluminum board has a cup structure thereon. The semiconductor substrate is assembled on a bottom surface of the cup structure. The LED chips are assembled on the semiconductor substrate. The metal layer structure is formed on a bottom surface of the aluminum board. The metal layer structure is composed of solderable materials. The heat sink is connected to the metal layer structure through solder joint.01-08-2009
20110127561ORGANIC ELECTROLUMINESCENCE DEVICE AND METHOD OF FABRICATING THE SAME - [Problem] The present invention aims to provide an electroluminescence device with an improved intermediate layer, for achieving a superior durability and sustainability performance thereof.06-02-2011
20110127560LIGHT-EMITTING DIODE CHIP AND METHOD OF MANUFACTRURING THE SAME - An LED chip includes a substrate and a p-n junction type semiconductor light-emitting structure. The substrate has a first surface and a second surface opposite to the second surface. The p-n junction type semiconductor light-emitting structure is arranged on the first surface of the substrate. A plurality of blind holes is defined in the second surface of the substrate and extends from the second surface towards the first surface. A heat conductive material is filled in each of the plurality of blind holes thereby forming a plurality of heat conductive poles in the plurality of blind holes.06-02-2011
20110127563DIE-BONDING METHOD OF LED CHIP AND LED MANUFACTURED BY THE SAME - A die-bonding method is suitable for die-bonding a LED chip having a first metal thin-film layer to a substrate. The method includes forming a second metal thin film layer on a surface of the substrate; forming a die-bonding material layer on the second metal thin film layer; placing the LED chip on the die-bonding material layer with the first metal thin film layer contacting the die-bonding material layer; heating the die-bonding material layer at a liquid-solid reaction temperature for a pre-curing time, so as to form a first intermetallic layer and a second intermetallic layer; and heating the die-bonding material layer at a solid-solid reaction temperature for a curing time, so as to perform a solid-solid reaction. The liquid-solid reaction temperature and the solid-solid reaction temperature are both lower than 110° C., and a melting point of the first and second intermetallic layers after the solid-solid reaction is higher than 200° C.06-02-2011
20110140161LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE AND PACKAGE, AND LIGHTING SYSTEM - Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises a light emitting structure layer comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, and an electrode comprising a pad part and a finger part on the light emitting structure layer. The pad part comprises a pattern in which at least one opening is defined, and the finger part comprises a pattern electrically connected to the pad part and linearly extending from the pad part.06-16-2011
20110297998SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar and a second insulating layer. The semiconductor layer includes a first major surface, a second major surface opposite to the first major surface and a light emitting layer. An edge of a part of the first interconnect layer is exposed laterally from the first insulating layer and the second insulating layer.12-08-2011
20110297996Electronic device and method of manufacturing the same - An electronic device comprises a functional stack (12-08-2011
20110298002LIGHT-EMITTING DIODE, LIGHT-EMITTING DIODE LAMP, METHOD FOR MANUFACTURING LIGHT-EMITTING DIODE - The object of the invention is to provide a light-emitting diode that is excellent in terms of thermal radiation properties and is capable of suppressing cracks in the substrate during joining and emitting light with high luminance by applying a high voltage, a light-emitting diode lamp, and a method of manufacturing a light-emitting diode. The above object is achieved by using a light-emitting diode (12-08-2011
20110298001METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE AND LIGHT-EMITTING DEVICE MANUFACTURED BY THE SAME - In one embodiment, a method for manufacturing a light-emitting device is disclosed. The method can include removing a substrate from a semiconductor layer. The semiconductor layer is provided on a first main surface of the substrate. The semiconductor layer includes a light-emitting layer. At least a top surface and side surfaces of the semiconductor layer are covered with a first insulating film. A first electrode portion and a second electrode portion electrically continuous to the semiconductor layer are provided. The first insulating film is covered with a second insulating film. The removing is performed by irradiating the semiconductor layer with laser light from a side of a second main surface of the substrate. The second main surface is opposite to the first main surface. The first insulating film is made of silicon nitride. The second insulating film is made of polyimide.12-08-2011
20110298000CHIP PACKAGE - According to an embodiment of the invention, a chip package is provided, which includes: a substrate having a first surface and a second surface; an optical device between the first surface and the second surface of the substrate; a protection layer formed on the second surface of the substrate, wherein the protection layer has at least an opening; at least a conducting bump formed in the opening of the protection layer and electrically connected to the optical device; and a light shielding layer formed on the protection layer, wherein the light shielding layer is further extended onto a sidewall of the opening of the protection layer.12-08-2011
20110297999Optoelectronic Semiconductor Component - An optoelectronic semiconductor component is provided, having a connection carrier (12-08-2011
20110297997SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, and a second insulating layer. The semiconductor layer includes a first major surface, a second major surface opposite to the first major surface, and a light emitting layer. The first electrode is provided on a region including the light emitting layer on the second major surface. The second electrode is provided on the second major surface and interposed in the first electrode in a planar view.12-08-2011
20110297995METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE AND LIGHT-EMITTING DEVICE MANUFACTURED BY THE SAME - In one embodiment, a method for manufacturing a light-emitting device is disclosed. The method can include removing a substrate from a semiconductor layer. The semiconductor layer is provided on a first main surface of the substrate. The semiconductor layer includes a light-emitting layer. At least a top surface and side surfaces of the semiconductor layer are covered with a first insulating film. A first electrode portion and a second electrode portion electrically continuous to the semiconductor layer are provided. The first insulating film is covered with a second insulating film. The removing is performed by irradiating the semiconductor layer with laser light from a side of a second main surface of the substrate. The second main surface is opposite to the first main surface. Each of band-gap energy of the second insulating film and band-gap energy of the semiconductor layer are smaller than energy of the laser light.12-08-2011
20100193826SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME - Provided are a semiconductor light emitting device and a method of fabricating the same. The semiconductor light emitting device comprises a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer, and an electrode layer comprising a conductive polymer on the second conductive semiconductor layer.08-05-2010
20120086043LIGHT EMITTING DEVICE AND LIGHTING SYSTEM - A light emitting device may be provided that includes a conductive support member; a first conductive layer disposed on the conductive support member; a second conductive layer disposed on the first conductive layer; a light emitting structure including a second semiconductor layer formed on the second conductive layer, an active layer formed on the second semiconductor layer, a first semiconductor layer formed on the active layer and an insulation layer. The first conductive layer includes at least one via penetrating the second conductive layer, the second semiconductor layer and the active layer and projecting into a certain area of the first semiconductor layer. The first semiconductor layer includes an ohmic contact layer formed on or above the conductive via. The insulation layer is formed between the first conductive layer and the second conductive layer and is formed on the side wall of the via.04-12-2012
20100171145LED PACKAGE METHODS AND SYSTEMS - Methods and systems are provided for LED modules that include an LED die integrated in an LED package with a submount that includes an electronic component for controlling the light emitted by the LED die. The electronic component integrated in the s submount may include drive hardware, a network interface, memory, a processor, a switch-mode power supply, a power facility, or another type of electronic component.07-08-2010
20100171144LIGHT EMITTING DEVICE PACKAGE AND MANUFACTURING METHOD THEREOF - Provided is a light emitting device package. The light emitting device package comprises a housing, first and second lead frames, and a light emitting device. The housing comprises a front opening and side openings. The first and second lead frames pass through the housing to extend to an outside. A portion of each lead frame being exposed through the front opening. The light emitting device is in the front opening and electrically connected to the first and second lead frames. A protrusion protruding in a direction of the side opening is formed on an inner surface of the side opening.07-08-2010
20100171142Embedding type solder point-free combination structure of LED beads with substrate or lamp body - This invention relates to an embedding type solder point-free combination structure of LED beads with substrate or lamp body, in which the LED chip is packaged on the embedded heat conductive socket to form embedding type LED beads without soldering for electric conduction, and the embedding type LED beads are fixed in the docking hole of the substrate or the lamp body by a detachable dock-fixing structure. Furthermore, the embedding type LED beads has elastic conductive pieces, while the substrate or lamp body has conductive contacts. The elastic conductive pieces of the embedding type LED beads and the conductive contacts provided on the substrate or lamp body are in close contact to form solder point-free structure when the embedding type LED beads are fixed in the docking hole of the substrate or lamp body by the dock-fixing structure. In this manner, it is convenient to mount or dismount the embedding type LED beads in case of maintenance needed.07-08-2010
20110284915Electronic device incorporating the white resin - The coating agent of the invention is a coating agent to be used between conductor members, comprising a thermosetting resin, a white pigment, a curing agent and a curing catalyst, the coating agent to be used between conductor members having a white pigment content of 10-85 vol % based on the total solid volume of the coating agent, and a whiteness of at least 75 when the cured product of the coating agent has been allowed to stand at 200° C. for 24 hours.11-24-2011
20110284912ELECTRONIC DEVICE AND MANUFACTURING METHOD THEREFOR - An electronic device includes a semiconductor substrate, an insulating material-filled layer and a vertical conductor. The semiconductor substrate has a vertical hole extending in a thickness direction thereof. The insulating material-filled layer is a ring-shaped layer filled in the vertical hole for covering an inner periphery thereof and includes an organic insulating material or an inorganic insulating material mainly of a glass and a nanocomposite ceramic. The nanocomposite ceramic has a specific resistance of greater than 1011-24-2011
20110284913Light-Emitting Device and Lighting Device - To provide a light-emitting device from which uniform light emission can be obtained by providing an auxiliary wiring; a light-emitting device in which a short circuit between electrodes or between an electrode and an auxiliary wiring, which is attributed to a step caused by the auxiliary wiring, hardly occurs; and a light-emitting device which has high reliability by preventing a short circuit. In an EL light-emitting device including an auxiliary wiring, by covering a step caused by the auxiliary wiring is covered with an insulator, a short circuit between electrodes or between an electrode and the auxiliary wiring, which is attributed to the step caused by the auxiliary wiring, is prevented. Thus, the above objects are achieved.11-24-2011
20110284914METHOD FOR MANUFACTURING SUBSTRATE FOR LIGHT EMITTING ELEMENT PACKAGE, AND LIGHT EMITTING ELEMENT PACKAGE - A substrate for a light emitting element package provided with a thick metal section formed under a mounting position of a light emitting element, comprising:an insulating layer which is composed of a resin containing heat conductive fillers under the mounting position of said light emitting element and has a heat conductivity of 1.0 W/mK or more; and a metal layer disposed inside said insulating layer and having the thick metal section, wherein a heat conductive mask section is disposed at the top of said thick metal section.11-24-2011
20110284911LIGHT EMITTING DIODE CHIP AND MANUFACTURING METHOD THEREOF - A light emitting diode (LED) chip includes a substrate, a light emitting semiconductor device, a first electrode, and a second electrode. The light emitting semiconductor device has a recess and includes a first portion and a second portion. The first portion is disposed on the substrate and located between the second portion and the substrate. The recess penetrates the second portion and exposes an exposed region of the first portion. The transverse sectional area of the first portion and the transverse sectional area of the second portion increase along a direction away from the substrate. The first electrode is disposed on the exposed region of the first portion and electrically connected to the first portion. The second electrode is disposed on and electrically connected to the second portion.11-24-2011
20110284910SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, and a second insulating layer. The first electrode is provided on the second major surface of the semiconductor layer. The second electrode is provided on a side face of a portion of the semiconductor layer between the light emitting layer and the first major surface. The second interconnect layer is provided in the second opening and on the first insulating layer on the side opposite to the second major surface to connect to the second electrode provided on the side face. The second interconnect layer is provided on the side face of the portion of the semiconductor layer with interposing the second electrode.11-24-2011
20110284909SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, an insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, a film covering a side face of the first metal pillar and a side face of the second metal pillar, and a resin layer. The semiconductor layer includes a light emitting layer, a first major surface, and a second major surface formed on a side opposite to the first major surface. The film has a solder wettability poorer than a solder wettability of the first metal pillar and a solder wettability of the second metal pillar. The resin layer covers at least part of the film.11-24-2011
20090242923Hermetically Sealed Device with Transparent Window and Method of Manufacturing Same - The invention is a hermetically sealed semiconductor die package wherein a surface of the die can be positioned very close to the hermetic package and a method of fabricating such a package. The invention is particularly suited to hermetically sealed circuit components, such as dies with a light emitting surface or light receiving surface for which it would be desirable to place the light emitting or light receiving surface as close as possible to a transparent window in the package so as to maximize the amount of light that can be transmitted out of the package.10-01-2009
20110156091CONTACTING A DEVICE WITH A CONDUCTOR - The invention relates to a method for contacting a device with a conductor 06-30-2011
20100327310SEMICONDUCTOR CHIP ASSEMBLY WITH POST/BASE/FLANGE HEAT SPREADER AND CAVITY IN FLANGE - A semiconductor chip assembly includes a semiconductor device, a heat spreader, a conductive trace and an adhesive. The heat spreader includes a post, a base and a flange. The conductive trace includes a pad and a terminal. The semiconductor device extends into a cavity in the flange, is electrically connected to the conductive trace and is thermally connected to the heat spreader. The post extends upwardly from the base into an opening in the adhesive, the flange extends upwardly from the post in the opening and extends laterally above the adhesive, the cavity extends into the opening and the base extends laterally from the post. The conductive trace is located outside the cavity and provides signal routing between the pad and the terminal.12-30-2010
20090278158GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - The present invention provides a gallium nitride based compound semiconductor light-emitting device having high light emission efficiency and a low driving voltage Vf. The gallium nitride based compound semiconductor light-emitting device includes a p-type semiconductor layer, and a transparent conductive oxide film that includes dopants and is formed on the p-type semiconductor layer. A dopant concentration at an interface between the p-type semiconductor layer and the transparent conductive oxide film is higher than the bulk dopant concentration of the transparent conductive oxide film. Therefore, the contact resistance between the p-type semiconductor layer and the transparent conductive oxide film is reduced.11-12-2009
20110297994SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a plurality of semiconductor layers, a first electrode, a second electrode, an insulating layer, a first interconnection layer, a second interconnection layer, a first metal pillar, a second metal pillar and a resin layer, and is mounted in a bent state on a curved surface. The plurality of semiconductor layers includes a first main surface, a second main surface opposite to the first main surface, and a light emitting layer, the plurality of semiconductor layers being separated from one another. A material is provided between the plurality of the semiconductor layers separated from one another. The member has a higher flexibility than the semiconductor layers being.12-08-2011
20110291150LED ILLUMINATION DEVICE - The invention disclose a light emitting diode (LED) illustration device, comprising a platform, a substrate and a light emitting diode die. The said platform comprises an upper surface and a bottom surface. A first concave portion is formed on the upper surface of the platform, and a second concave portion is formed on the bottom surface of the platform. The first concave portion is connected with the second concave portion. The substrate is embedded in the second concave portion, wherein the said substrate comprises an electrostatic discharge protection structure. The said light emitting diode die is disposed on the said substrate.12-01-2011
20120286319LIGHT EMITTING DEVICE PACKAGE AND ULTRAVIOLET LAMP HAVING THE SAME - Provided is a light emitting device package. The light emitting device package comprises a body, a heat diffusing member, a light emitting diode (LED), and a buffer layer. A cavity with an opened topside is formed in the body. The heat dissipation member is disposed between a bottom surface of the cavity and a lower surface of the body. The LED is disposed on one of an electrode disposed on the bottom surface of the cavity. The buffer layer is disposed between the heat dissipation member and a pad and has a thickness thinner than a thickness of the heat dissipation member.11-15-2012
20120012887Light-Emitting Device - It is an object of the present invention is to provide a light-emitting device in which high luminance can be obtained with low power consumption by improving the extraction efficiency. A light-emitting device of the invention comprises an insulating film, a plurality of first electrodes being in contact with the insulating film and formed on the insulating film to be in parallel, an electroluminescent layer formed over the plurality of first electrodes, and a plurality of second electrodes intersecting with the plurality of first electrodes and formed over the electroluminescent layer in parallel, wherein the insulating film contains nitrogen and silicon and the first electrodes contain a conductive transparent oxide material and silicon oxide.01-19-2012
20120012886LIGHT EMITTING DIODE, FRAME SHAPING METHOD THEREOF AND IMPROVED FRAME STRUCTURE - A single material tape is shaped into first, second and third frames isolated from and disposed opposite each other, and a press forming process is performed to thin bottoms of first and second wire-bonding sectors extending from the first and second frames. The thickness of each of the first and second wire-bonding sectors is smaller than that of the third frame, so that the thicker third frame can be exposed out of a glue body to achieve the better dissipation effect, and at least one side surface between the two frames isolated from and disposed opposite each other is formed with a slot portion. When the frame is applied to the light emitting diode and fixed to the glue body, the slot portion can increase the bonding property between the frame and the glue body, and the structural strength therebetween can be increased.01-19-2012
20110291154SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device, has a package constituted by the lamination of a first insulating layer having a pair of positive and negative conductive wires formed on its upper face, an inner-layer wire below the first insulating layer, and a second insulating layer below the inner-layer wire; a semiconductor light emitting element that has a pair of positive and negative electrodes on the same face side and that is disposed with these electrodes opposite the conductive wires; and a sealing member that covers the semiconductor light emitting element, wherein part of the conductive wires is formed extending in the outer edge direction of the sealing member from directly beneath the semiconductor light emitting element, on the upper face of the first insulating layer, and is connected to the inner-layer wire via a conductive wire disposed in the thickness direction of the package, and the inner-layer wire is disposed so as to be spaced apart from the outer periphery of the semiconductor light emitting element in a see-through view of the package from the upper face side of the first insulating layer.12-01-2011
20110291155Light-Emitting Diode Chip Package Body and Method for Manufacturing Same - A light-emitting diode chip package body with an excellent heat dissipation performance and a low manufacturing cost, and a packaging method of the same are disclosed. A LED chip package body is provided, the LED chip package body comprising: a LED chip having an electrode-side surface and at least two electrodes mounted on said electrode-side surface; an electrode-side insulating layer formed on said electrode-side surface of said LED chip and formed with a plurality of through-holes registered with corresponding said electrodes; a highly heat-dissipating layer formed in each of said through-holes of said insulating layer on said electrode-side surface; and a highly heat-conducting metal layer formed on said highly heat-dissipating layer in each of said through-holes.12-01-2011
20110291146DRY FLUX BONDING DEVICE AND METHOD - Methods of forming devices, including LED devices, are described. The devices may include fluorinated compound layers. The methods described may utilize a plasma treatment to form the fluorinated compound layers. The methods described may operate to produce an intermetallic layer that bonds two substrates such as semiconductor wafers together in a relatively efficient and inexpensive manner.12-01-2011
20110291153CHIP SUBMOUNT, CHIP PACKAGE, AND FABRICATION METHOD THEREOF - A light-emitting diode submount includes a base, a through silicon via and a sealing layer. The base has a die side and a back side. The through silicon via penetrates the base to connect the die side and the back side. The through silicon via includes a conoidal-shaped portion converging from the back side toward the die side, and a vertical via portion connects with the conoidal-shaped portion. A sealing layer seals the vertical via portion.12-01-2011
20110291151LIGHT EMITTING DEVICE AND LIGHTING APPARATUS - According to one embodiment, a light emitting device includes a ceramics substrate, a metallic thermally-conductive layer formed on the substrate in which the substrate involves no electric connection, a light emitting element mounted on the metallic thermally-conductive layer, and a metallic bonding layer interposed between the metallic thermally-conductive layer and the light emitting element to bond the light emitting element to the metallic thermally-conductive layer.12-01-2011
20110291148SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, an insulating layer, a first interconnection layer, a second interconnection layer, a first metal pillar, a second metal pillar, a resin layer and a conductive material. The conductive material is provided on a surface of the resin layer between the first metal pillar and the second metal pillar, and electrically connects the first metal pillar and the second metal pillar.12-01-2011
20110291147OHMIC CONTACTS FOR SEMICONDUCTOR STRUCTURES - A composition and method for formation of ohmic contacts on a semiconductor structure are provided. The composition includes a TiAl12-01-2011
20110127564METHOD FOR PRODUCING A PLURALITY OF RADIATION-EMITTING COMPONENTS AND RADIATION-EMITTING COMPONENT - A method for producing a plurality of radiation-emitting components includes A) providing a carrier layer having a plurality of mounting regions separated from one another by separating regions; B) applying an interlayer to the separating regions; C) applying a respective radiation-emitting device to each of the plurality of mounting regions; D) applying a continuous potting layer to the radiation-emitting device and the separating regions; E) severing the potting layer and partially severing the interlayer in the separating regions of the carrier layer in a first separating step; and F) partially severing the interlayer and severing the carrier layer in a second separating step, wherein the interlayer is completely severed by the first and the second separating step.06-02-2011
20120098024NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE WITH MAGNETIC FILM - A nitride semiconductor light emitting device including an n-type nitride semiconductor layer, a p-type nitride semiconductor layer, a light emitting semiconductor layer, a first metal pad, a second metal pad, and a first magnetic material layer is provided. The light emitting semiconductor layer is disposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer. The first metal pad is electrically connected to the n-type nitride semiconductor layer. The second metal pad is electrically connected to the p-type nitride semiconductor layer. The first magnetic material layer is disposed between the first metal pad and the n-type nitride semiconductor layer. A distribution area of the first magnetic material layer parallel to a (0001) plane of the n-type nitride semiconductor layer is greater than or equal to an area of the first metal pad parallel to the (0001) plane.04-26-2012
20120098023NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - A nitride semiconductor light-emitting device includes at least one n-type semiconductor layer, an active layer and at least one p-type semiconductor layer within a rectangle nitride semiconductor region on a substrate. The n-type semiconductor layer has a partial exposed area, a p-side branch electrode integral with a p-side electrode pad formed on a current diffusion layer formed on the p-type semiconductor layer, an n-side branch electrode integral with an n-side electrode pad formed on the partial exposed area of the n-type semiconductor layer, the p-side and n-side branch electrodes extend parallel to each other along two opposite sides of the semiconductor region, and conditions of 0.304-26-2012
20090184337Light-Emitting Diode, Package Structure Thereof and Manufacturing Method for the Same - A light-emitting diode includes a sapphire substrate, an n-type semiconductor, a light-emitting layer, a p-type semiconductor layer, an anode and a conductive material. The n-type semiconductor layer is formed on the sapphire substrate and has a side surface, a center section and an edge around the center portion. The light-emitting layer is formed on the n-type semiconductor layer. The p-type semiconductor layer is formed on the light-emitting layer. The anode is formed on the p-type semiconductor layer. The conductive material is formed on the bottom surface of the sapphire substrate and is in contact with the n-type semiconductor layer.07-23-2009
20090309117PROTECTION CIRCUIT, AND SEMICONDUCTOR DEVICE AND LIGHT EMITTING DEVICE USING SUCH PROTECTION CIRCUIT - In a protection circuit connected, via lines including an inductance component, to a circuit to be protected, a first transistor is arranged on a path to ground from a connection point of the protection circuit and the line. A second transistor is arranged on a path to ground from a connection point of the circuit to be protected and the line, and extracts, from a connection point, a current corresponding to a current flowing in the first transistor. The first and the second transistors are NPN bipolar transistors having a base and an emitter are commonly connected. A resistor is connected between the base and the emitter of the first transistor, and a diode is connected between the base and a collector.12-17-2009
20120025260SEMICONDUCTOR DEVICE - A semiconductor device includes a lead frame, a first semiconductor element mounted on the lead frame, a frame-like member formed on the lead frame, surrounding the first semiconductor element, and a protective resin filling a space surrounded by the frame-like member. The lead frame has an external terminal protruding outside the frame-like member. The external terminal has a barrier portion which is located at an end portion thereof protruding from the frame-like member and rises from a top surface of the external terminal.02-02-2012
20120025259ELECTRO-OPTIC DEVICE AND METHOD FOR MANUFACTURING THE SAME - An electro-optic device (02-02-2012
20120025258LIGHT EMITTING DIODE PACKAGE AND LIGHT EMITTING DIODE MODULE - An exemplary LED module includes a board and an LED package mounted on the plate. The LED package includes a base, an LED chip mounted on a top surface of the base, two electrodes formed on the base and electrically connected to the LED chip and the board, and an encapsulant encapsulating the LED chip. A plurality of grooves are defined in the bottom surface of the base. When the LED package is secured on the plate via solder paste, the grooves function as a container for receiving excessive solder paste, thereby preventing the solder paste from spilling and floating or inclination of the LED package.02-02-2012
20090189177Light emitting diode package and manufacturing method thereof - Disclosed are a light emitting diode package and a manufacturing method thereof. According to an embodiment of the present invention, the method includes: manufacturing a package main body having a plurality of cavities, the cavities being formed in a line on one surface, through molding by putting thermoplastic polymer into a previously produced mold; forming an electrode passing through the package main body; mounting a light emitting diode chip on a basal surface of the each cavity formed in the package main body; connecting electrically the light emitting diode chip and the electrode by using a bonding means; and sealing the light emitting diode chip and the bonding means by using a molding resin.07-30-2009
20090189175Side view type light emitting diode package - Disclosed is a side view light emitting diode (LED) package whose light emitting surface has been relatively expanded. The LED package includes a housing and a lead frame extended externally through the housing and bent in a direction of the recessed space. The housing includes a reflecting housing having a cavity and a supporting housing.07-30-2009
20090189174Light emitting diode package - A light-emitting diode (“LED”) package is disclosed. The LED package includes a substrate, a pad frame, an LED chip and a housing. The pad frame includes a conductive lead divided by insulation materials on the substrate. The LED chip is mounted on the conductive lead. The housing surrounds the LED chip and the conductive lead, and has opening recess exposing the LED chip and a part of the conductive lead. The conductive lead includes a protrusion extended in both directions substantially perpendicular to a longitudinal direction of the housing.07-30-2009
20100072506ULTRAVIOLET LIGHT EMITTING DIODE PACKAGE - An ultraviolet light emitting diode package for emitting ultraviolet light is disclosed. The ultraviolet light emitting diode package comprises an LED chip emitting light with a peak wavelength of 350 nm or less, and a protective member provided so that surroundings of the LED chip is covered to protect the LED chip, the protective member having a non-yellowing property to energy from the LED chip.03-25-2010
20090121251Siloxane-hydantoin copolymer, optoelectronic device encapsulated therewith and method - The invention provides a siloxane-hydantoin copolymer, an optoelectronic device encapsulated therewith, and methods thereof. The siloxane-hydantoin copolymer comprises a unit selected from the group consisting of Y05-14-2009
20090146174SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF, AND CAMERA MODULE INCLUDING THE SAME - A semiconductor device includes: an insulating base; a semiconductor element provided on the insulating base; a protector provided on the semiconductor element; and a frame provided on a periphery of the insulating base and surrounding the semiconductor element. A region inside the frame is filled with a sealing resin, and at least one groove is provided in an upper corner portion of the frame on the semiconductor element side of the frame.06-11-2009
20090121253LIGHT-EMITTING APPARATUS AND METHOD OF MANUFACTURING THE SAME - The present invention provides a light-emitting apparatus capable of improving brightness and reducing power consumption and a method of manufacturing the same. The light-emitting apparatus includes: a light-emitting device 05-14-2009
20090121252METHOD FOR MANUFACTURING FLIP-CHIP LIGHT EMITTING DIODE PACKAGE - A method for manufacturing flip-chip light emitting diode (LED) package fabricates a silicon submount with at least one groove by wet etching. Two vias are defined on base of the groove, wherein each via has a contact pad thereon and a bottom electrode on bottom thereof. An LED die is flip-chip mounted in the groove with the electrodes thereof electrically connected to the contact pads. A protective glue is applied to fill the groove and provides a flat top face. A phosphor layer is formed on the flat top face by printing. The phosphor layer is formed with excellent uniformity due to the flat top face, and provides uniform wavelength conversion effect. Alternatively, a phosphor plate is manufactured in advance and selected with desired color temperature parameter. The phosphor plate with desired color temperature parameter is attached to the flat top face of the protective glue instead of printing.05-14-2009
20100123160Light-Emitting Device, Method for Manufacturing the Same, and Cellular Phone - The invention relates to: a light-emitting device which includes a first flexible substrate having a first electrode, a light-emitting layer over the first electrode, and a second electrode with a projecting portion over the light-emitting layer and a second flexible substrate having a semiconductor circuit and a third electrode electrically connected to the semiconductor circuit, in which the projecting portion of the second electrode and the third electrode are electrically connected to each other; a method for manufacturing the light-emitting device; and a cellular phone which includes a housing incorporating the light-emitting device and having a longitudinal direction and a lateral direction, in which the light-emitting device is disposed on a front side and in an upper portion in the longitudinal direction of the housing.05-20-2010
20120228662LIGHT EMITTING DEVICE - The light emitting device according to the present invention includes a resin molded body having a recess, a first electrically conductive member and a second electrically conductive member each having terminal portions respectively exposed from a first outer side surface and second outer side surface which are opposite outer side surfaces among the outer side surfaces of the resin molded body, and a light emitting element mounted on the first electrically conductive member exposed at a bottom surface of the recess. The recess has a first bottom surface on which the light emitting element is mounted and a second bottom surface arranged at a higher position of the outer periphery of the first bottom surface.09-13-2012
20090146173SOLID STATE ILLUMINATION DEVICE - A solid state illumination device includes a solid state light emitting diode and a mounting base. The solid state light emitting diode includes encapsulation material, a wafer, and first and second electrodes. The first and second electrodes have first ends electrically connecting with the wafer, and opposite second ends exposed outside the encapsulation material. The wafer and the first ends are encapsulated in the encapsulation material. The mounting base includes a main body with a receptacle defined therein, first and second receiving holes receiving the first and second electrodes. The main body defines an indent communicating with the first receiving holes receiving a bulge extending from the first electrodes.06-11-2009
20090146172Component Attach Methods and Related Device Structures - A method, and associated apparatus, for attaching a component (e.g., an electronic and/or optoelectronic component) is provided which can facilitate low-voiding of an attachment layer. The method includes disposing an attachment material layer over a surface, providing the component having a backside surface, disposing a portion of the backside surface of the component over a first portion of the attachment material layer such that a substantial portion of the backside surface of the component is not disposed over the attachment material layer, and moving the component such that the component is attached to at least a portion of the attachment material layer that is substantially larger than the first portion of the attachment material layer. The attachment material can include a solder. A light-emitting device is also described that comprises a component including a light-emitting die, wherein the component is supported by a substrate, and wherein the light-emitting die comprises a light emission surface and a backside surface disposed opposite the light emission surface. The light emission surface of the light-emitting die has an area greater than or equal to 1 mm06-11-2009
20110260202Production Method for a III-V Based Optoelectronic Semiconductor Chip Containing Indium and Corresponding Chip - An optoelectronic semiconductor chip (10-27-2011
20110260200METHOD OF FABRICATING NON-METAL LED SUBSTRATE AND NON-METAL LED SUBSTRATE AND METHOD OF FABRICATING LED DEVICE USING THE NON-METAL LED SUBSTRATE AND LED DEVICE WITH THE NON-METAL LED SUBSTRATE - The present invention discloses a method of fabricating non-metal substrate having steps of (a) providing a non-metal board having two opposite first and second surfaces; (b) drilling at least one second through hole through the non-metal board; (c) electroplating copper on outsides of non-metal board and an inside of each of at least one second through hole to form copper films outside of the non-metal board and at least one solid copper pole in corresponding to the at lest one second through hole; and (d) patterning the copper films to form line pattern. The non-metal substrate has high thermal conductivity and the solid copper poles therein are integrated with the line pattern formed outside thereof, so the connection strength among the die pad, solid copper poles and heat conduction pad is good.10-27-2011
20080308834LIGHT-EMITTING DIODE - A light-emitting diode (LED) is provided, wherein the LED comprises an epitaxial structure, a bonding layer and a composite substrate. The composite substrate comprises a patterned substrate having a pattern and a conductive material layer disposed around the patterned substrate. The bonding layer is formed on the composite substrate. The epitaxial structure is formed on the bonding layer.12-18-2008
20080237625LIGHT EMITTING DIODE LAMP WITH LOW THERMAL RESISTANCE - Disclosed is a light emitting diode lamp that has low resistance to heat emitted therefrom. The LED lamp may include a heat coupling member thermally coupling a top part of a first lead to a top part of a second lead. The LED lamp may further include one or more top parts for lowering thermal resistance of the LED lamp. This configuration facilitates heat transfer from the first lead having an LED chip mounted thereon to the top part of the second lead and/or to the other top parts, lowering resistance to heat emitted from the LED lamp.10-02-2008
20110147784Light emitting device with more uniform current spreading - A nitride light emitting device (LED) according to a non-limiting embodiment of the present invention may include a p-pad and an n-pad, wherein the p-pad and n-pad are disposed on opposite ends of the device. A first p-branch electrode and a second p-branch electrode may extend from the p-pad toward the n-pad, with the first p-branch electrode extending along a length of the device. The second p-branch electrode may have a bent portion so as to extend along a width and length of the device. An n-branch electrode may extend from the n-pad toward the p-pad, wherein a distal end of the n-branch electrode is angled toward the bent portion of the second p-branch electrode. Alternatively, the p-branch and n-branch electrodes may be configured such that a distance between the n-branch electrode and the first and second p-branch electrodes increases with proximity to the n-pad. As a result, the nitride-based LED according to example embodiments may exhibit improved current uniformity, lower forward operating voltage, and higher overall efficiency.06-23-2011
20100117113LIGHT EMITTING DIODE AND LIGHT SOURCE MODULE HAVING SAME - An exemplary light emitting diode includes a substrate, a metal material and a light emitting diode chip. The substrate has a first surface and a first through hole defined in the first surface. The first through hole is filled with the metal material. The light emitting diode chip is mounted on the first surface contacting the metal material in the first through hole.05-13-2010
20100123156LIGHT EMITTING DEVICE - Provided is a light emitting device. The light emitting device includes: a plurality of lead frame units spaced apart from each other, each of the lead frame units being provided with at least one fixing space perforating a body thereof in a vertical direction; a light emitting diode chip mounted on one of the lead frame units; and a molding unit that is integrally formed on top surfaces of the lead frame units and in the fixing spaces to protect the light emitting diode chip.05-20-2010
20100123162OPTICAL SEMICONDUCTOR APPARATUS AND METHOD FOR PRODUCING THE SAME - An optical semiconductor apparatus can be configured by mounting an optical semiconductor element on a package substrate using a solder paste. The optical semiconductor apparatus can include a package substrate and a metal die pad formed on the substrate, and an optical semiconductor element bonded to the die pad with a solder material. The substrate can be made of a ceramic base material. A plurality of through holes can be formed in the substrate so that the through holes penetrate both the substrate base material and the die pad. Each of the through holes can have an inner surface where the ceramic base material is exposed. Each through hole can have an opening diameter greater than or equal to 40 μm and less than or equal to 100 μm. The plurality of through holes can be formed such that the total area of the openings of the through holes is 50% or less of the bonded area between the optical semiconductor element and the die pad including the through holes covered with the solder material. The through holes can be covered with the solder material at the upper end thereof where the optical semiconductor element and the die pad are bonded to each other.05-20-2010
20090309118NITRIDE LIGHT EMITTING DEVICE OF USING SUBSTRATE DECOMPOSITION PREVENTION LAYER AND MANUFACTURING METHOD OF THE SAME - A light-emitting device is provided with a substrate decomposition prevention layer using as a matrix at least one selected from the group consisting of boron nitride (B—N), silicon carbide (Si—C), and silicon carbon nitride (Si—C—N), and patterned into a predetermined shape; an n-type nitride clad layer formed on the substrate decomposition prevention layer; a nitride active layer formed on the n-type nitride clad layer; a p-type nitride clad layer formed on the nitride active layer; a p-type ohmic contact layer formed on the p-type nitride clad layer; a p-type electrode pad formed on the p-type ohmic contact layer; an n-type ohmic contact layer electrically connected to the n-type nitride clad layer by means of a patterned region of the substrate decomposition prevention layer; and an n-type electrode pad formed beneath the n-type ohmic contact layer.12-17-2009
20110193128METHOD OF FABRICATING VERTICAL STRUCTURE LEDS - A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques. Trenches that define the boundaries of the individual devices are then formed through the semiconductor layers and into the insulating substrate, beneficially by using inductive coupled plasma reactive ion etching. The trenches are then filled with an easily removed layer. A metal support structure is then formed on the semiconductor layers (such as by plating or by deposition) and the insulating substrate is removed. Electrical contacts, a passivation layer, and metallic pads are then added to the individual devices, and the individual devices are then diced out.08-11-2011
20090014749CHIP-TYPE LED AND METHOD OF MANUFACTURING THE SAME - An embodiment of the present invention has an insulating substrate in which a first concave hole for mounting an LED chip and a second concave hole for connecting a metallic small-gauge wire are formed, where a metallic sheet that serves as a first wiring pattern is formed at a portion that includes the first concave hole, a metallic sheet that serves as a second wiring pattern is formed at a portion that includes the second concave hole, an LED chip is mounted upon the metallic sheet inside the first concave hole, the LED chip is electrically connected to the metallic sheet inside the second concave hole via a metallic small-gauge wire, and the chip-type LED is sealed with a clear resin.01-15-2009
20120292659ORGANIC OPTOELECTRONIC DEVICE AND METHOD - An organic optoelectronic device, such as an organic light emitting device, includes an anode, a cathode and an active organic layer between the anode and the cathode. The cathode includes a layer including a strontium compound, a first conductive layer over the layer including a strontium compound, and a second conductive layer over the first conductive layer, and provides a stable device.11-22-2012
20120292660LED DEVICE, METHOD OF MANUFACTURING THE SAME, AND LIGHT-EMITTING APPARATUS - The LED device (11-22-2012
20090309124LED Fabrication via Ion Implant Isolation - A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. In method embodiments disclosed, the resistive gallium nitride border is formed by forming an implant mask on the p-type epitaxial region and implanting ions into portions of the p-type epitaxial region to render portions of the p-type epitaxial region semi-insulating. A photoresist mask or a sufficiently thick metal layer may be used as the implant mask.12-17-2009
20090309122LIGHT EMITTING DIODE PACKAGE - A light emitting diode package is provided including: a lead frame that includes an electrode pad and an electrode lead that are integrally formed to each other; and a housing, wherein the electrode pad is exposed in a first direction through a window formed by inner walls of the housing, and the electrode lead is exposed in a second direction through a through-hole, wherein the housing includes a step jaw prepared by sinking the housing inner walls.12-17-2009
20090309120LED Semiconductor Element, and Use Thereof - An LED semiconductor element comprising at least one first radiation-generating active layer and at least one second radiation-generating active layer which is stacked above the first active layer in a vertical direction and is connected in series with the first active layer, wherein the first active layer and the second active layer are electrically conductively connected by means of a contact zone.12-17-2009
20090267108LIGHT EMITTING DIODE CHIP PACKAGE AND METHOD OF MAKING THE SAME - The LED chip package of the present invention uses a semiconductor substrate as package substrate, which improves heat dissipation. Also, the LED chip package is incorporated with a planarization structure, which renders the LED chip and the substrate a substantially planar surface, thereby making formation of a planar patterned conductive layer possible. Accordingly, serial/parallel electrical connections between light emitting diode chips can be easily implemented by virtue of the planar patterned conductive layer.10-29-2009
20090267103GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PRODUCTION METHOD THEREOF - The invention provides a gallium nitride based compound semiconductor light emitting device with excellent light extracting efficiency and its production method. A light emitting device, obtained from a gallium nitride based compound semiconductor, includes a substrate; a n-type semiconductor layer 10-29-2009
20110180841ALTERNATING CURRENT DRIVEN LIGHT EMITTING DIODE - The present invention relates to an alternating current driven light emitting diode module. The alternating current driven light emitting diode module includes an alternating current driven light emitting diode chip, a first thermal conduction plate, and a ceramic substrate. The first thermal conduction plate is arranged on the ceramic substrate. The alternating current driven light emitting diode chip is arranged on the first thermal conduction plate. The alternating current driven light emitting diode module has better heat dissipating property and better insulation property.07-28-2011
20110147787ORGANIC LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF - An organic light emitting diode (OLED) and a method for manufacturing the same are provided. In the OLED, patterned metal electrodes are positioned on one or more of upper and lower portions of a light emission layer to allow light generated from the light emission layer to emit to an area between the patterned metal electrodes.06-23-2011
20110147785SURFACE MOUNT LED AND HOLDER - A surface mount LED for attaching an LED to a substrate using a conventional reflow soldering technique. The surface mount LED according to this invention includes an LED and a holder. The LED includes a plurality of leads. The holder supports the LED and includes a plurality of feet arranged at approximately equal intervals around the perimeter of a base of the holder. Each lead is wrapped around a respective foot. The resulting wrapped lead forms a contact point corresponding with a solder pad layout for attaching the surface mount LED to a substrate.06-23-2011
20100123164LIGHT EMITING DEVICE AND METHOD OF MAKING SAME - A light emitting device includes a light-emitting portion including a metal part including a metal able to be bonded to a solder material, and a heat dissipation member that includes aluminum, aluminum alloy, magnesium or magnesium alloy and a bonding portion processed to be bonded to the solder material. The metal part of the light-emitting portion is bonded via the solder material to the bonding portion of the heat dissipation member. The solder material includes a material unable to be directly bonded to the heat dissipation member, the metal part of the light-emitting portion is formed by metalizing an insulation of ceramic or semiconductor, and the bonding portion includes a thermal expansion coefficient between that of the heat dissipation member and that of the insulation.05-20-2010
20100123158Light emitting device and method of manufacturing the same - Provided is a light emitting diode (LED) manufactured by using a wafer bonding method and a method of manufacturing a LED by using a wafer bonding method. The wafer bonding method may include interposing a stress relaxation layer formed of a metal between a semiconductor layer and a bonding substrate. When the stress relaxation layer is used, stress between the bonding substrate and a growth substrate may be offset due to the flexibility of metal, and accordingly, bending or warpage of the bonding substrate may be reduced or prevented.05-20-2010
20100084683LIGHT EMITTING DIODE PACKAGE AND FABRICATING METHOD THEREOF - A light emitting diode (LED) package is provided. The LED package includes a carrier, a package housing, a strength enhancement structure, an ESD protector and an LED chip. The carrier has a first surface and a second surface. The carrier includes a first electrode and a second electrode, wherein a gap is between the first electrode and the second electrode. The package housing is disposed on the carrier and has a first aperture and a second aperture. The first surface is exposed by the first aperture while the second surface is exposed by the second aperture. The strength enhancement structure is disposed at the gap. The ESD protector is disposed on the carrier and located within the second aperture. The LED chip is disposed on the carrier and located within the first aperture, wherein the ESD protector and the LED chip is electrically connected to the carrier.04-08-2010
20110062487SEMICONDUCTOR LIGHT EMITTING DEVICE - The present disclosure relates to a semiconductor light emitting device, the semiconductor light emitting device comprising: a plurality of openings positioned between first electrode and second electrode, the plurality of openings defining a first opening region for suppressing current flow between the first electrode and the second electrode and a second opening region for relatively less suppressing current flow than the first opening region.03-17-2011
20110062485SEMICONDUCTOR LIGHT-EMITTING ELEMENT, METHOD FOR MANUFACTURING THE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND LAMP THAT USES THE SEMICONDUCTOR LIGHT-EMITTING ELEMENT - Provided are a semiconductor light-emitting element that is capable of efficiently outputting blue color or ultraviolet light, and a lamp using the semiconductor light-emitting element.03-17-2011
20110062484SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A light-emitting device which includes a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type; and a light emitting layer provided between the first and second semiconductor layers, the device comprises a first electrode formed on the first semiconductor layer; a second electrode formed on the second semiconductor layer; and a light-transmissive electrode covering the second semiconductor layer and the second electrode, wherein contact between the second electrode and the second semiconductor layer is non-ohmic, and the second electrode has a stacked structure including a lower layer and an upper layer whose contact resistance with the light-transmissive electrode is lower than that of the lower layer, part of the second electrode being exposed through an opening formed in the light-transmissive electrode.03-17-2011
20110062483LIGHT-EMITTING DIODE - This invention provides a light-emitting diode (LED). The LED is electrically connected with a circuit board. The LED includes a light-emitting chip, an encapsulating element, a lead, and a heat insulating element. The encapsulating element encapsulates the light-emitting chip. The lead is coupled with the light-emitting chip and the circuit board. The lead and the encapsulating element form a first connecting place. The lead and the circuit board form a second connecting place. The heat insulating element is disposed between the first connecting place and the second connecting place.03-17-2011
20110062482Apparatus And Method For Enhancing Connectability In LED Array Using Metal Traces - A light-emitting device having multiple light-emitting diode (“LED”) dice organized in an array capable of configuring LED dice in series, parallel, and/or a combination of series and parallel via metal traces is disclosed. In one aspect, the light-emitting device includes a substrate, a dielectric layer, an LED array, and a metal trace. The dielectric layer, which is disposed over the substrate, provides electric insulation. The LED array capable of generating light is able to enhance flexibility of LED connections using a metal trace. The metal trace has a predefined shape configured to travel through the LED array for facilitating electric connections.03-17-2011
20090206358PACKAGE STRUCTURE OF COMPOUND SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF - A package structure of a compound semiconductor device comprises a thin film substrate, a die, at least one metal wire and a transparent encapsulation material. The thin film substrate comprises a first conductive film, a second conductive film, and an insulating dielectric material. The die is mounted on the surface of the first conductive film, and is electrically connected to the first conductive film and the second conductive film through the metal wire. The transparent encapsulation material overlays the first conductive film, second conductive film, and die. The surfaces of the first conductive film and second conductive film which is opposite the transparent encapsulation material act as electrodes. The insulating dielectric material is between the first conductive film and second conductive film.08-20-2009
20110266585LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM - A light emitting device is provided. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a first dielectric layer over a part of an upper surface of the light emitting structure, and a pad electrode over the first dielectric layer.11-03-2011
20100006886HIGH POWER LIGHT EMITTING DIODE CHIP PACKAGE CARRIER STRUCTURE - A high power LED (light-emitting diode) chip package carrier structure is disclosed and comprises a circuit board, a metal plate and a lid. The circuit board has a perforate groove for positioning a chip, and an electrode contact area formed at two sides or border of the perforate groove. The metal plate is positioned beneath the circuit board. The lid is positioned above the circuit board, and has a through groove with a width larger than the width of the perforate groove of the circuit board such that the electrode contact area can be exposed out in the through groove of the lid. Thus, the manufacturing process can be simplified and helpful to the mass production.01-14-2010
20090273005OPTO-ELECTRONIC PACKAGE STRUCTURE HAVING SILICON-SUBSTRATE AND METHOD OF FORMING THE SAME - Disclosed herein is a structure of opto-electronic package having a Si-substrate. The Si-substrates are manufactured in batch utilizing the micro-electromechanical processes or the semiconductor processes, so that these Si-substrates are made with great precision and full of varieties. Based on the material characteristic of the Si-substrate, and the configuration of the components, such as the connectors, opto-electronic devices, depressions, solder bumps, etc., the present invention can improve the optical effect, the heat dissipating effect, and the reliability of the opto-electronic package structure, and simplifies the complexity of the opto-electronic package structure.11-05-2009
20090278157Method for the production of a semiconductor component comprising a planar contact, and semiconductor component - In a method for producing a semiconductor component, in particular a semiconductor structure having a surface structure or topography which is produced by means of electronic components (11-12-2009
20090045432Circuit board for light emitting device package and light emitting unit using the same - A circuit board for a light emitting device and a light emitting unit using the same, which are capable of achieving an enhancement in light emission efficiency and an enhancement in reliability, are disclosed. The disclosed circuit board includes a substrate having a first surface and a second surface, at least one pair of conductive lines formed on the first surface of the substrate, and electrically connected to a light emitting device package, and a heat transfer member formed in a region where the light emitting device package is coupled to the circuit board, such that the heat transfer member connects the first and second surfaces of the substrate.02-19-2009
20090045429Diode structure and memory device including the same - Provided are a diode structure and a memory device including the same. The diode structure includes: a first electrode; a p-type Cu oxide layer formed on the first electrode; an n-type InZn oxide layer formed on the p-type Cu oxide layer; and a second electrode formed on the n-type InZn oxide.02-19-2009
20090090927Structure of light emitted diode package - A structure of light emitted diode package including a lead frame, a holder coupled on an end of the lead frame, a LED chip disposed on the holder, a lower sealing portion made by injection molding a first resin material to grab one end of lead frame with the LED chip in order to hold the lead frame and an upper sealing portion made by casting by a second resin material to dispose on the top of the lower sealing portion.04-09-2009
20090090926SOLID STATE LIGHT EMITTING DEVICE - A solid state light emitting device includes a laminated substrate structure (04-09-2009
20110169044Light Emitting Diode - A light-emitting diode has a metal mesh pattern formed on an active layer without a transparent oxide conductive layer formed in between is disclosed. The mesh pattern is formed by using ion bombardment a metal layer so that myriad pits formed into the exposed portion of the active layer served as light emitting centers.07-14-2011
20110169042LIGHT EMITTING DIODE PACKAGE AND METHOD FOR FORMING THE SAME - A light emitting diode package is provided, which includes a semiconductor substrate having a first surface and a second surface; at least a through-hole passing through the semiconductor substrate; a thermal via formed extending from the second surface toward the first surface of the semiconductor substrate, wherein the thermal via has a first end near the first surface and a second end near the second surface; an insulating layer overlying a sidewall of the through-hole and extending overlying the first surface and the second surface of the semiconductor substrate, wherein the insulating layer further covers at least one of the first end, the second end and a sidewall of the thermal via; a conducting layer overlying the insulating layer in the through-hole and extending to the first surface and the second surface of the semiconductor substrate; and an LED chip disposed overlying the semiconductor substrate.07-14-2011
20110169041LIGHT EMITTING DEVICE - Disclosed is a light emitting device. The light emitting device comprises a light emitting semiconductor layer comprising a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, a first passivation layer on the light emitting semiconductor layer, and a second passivation layer on the first passivation layer and has an elastic modulus of 2.0 to 4.0 GPa.07-14-2011
20110198658LIGHT EMITTING DIODE PACKAGE AND LIGHT UNIT HAVING THE SAME - Disclosed are a light emitting device package and a light unit having the same. The light emitting device package includes a body including a cavity at a first side surface, first and second lead frames in the cavity, a light emitting device connected to the first and second lead frames, a heat radiation pad on a second side surface of the body, a heat radiation frame on a third side surface of the body, and first and second electrode pads disposed on the second side surface of the body and spaced apart from the heat radiation pad.08-18-2011
20110198657Organic Light-Emitting Diode, Contact Arrangement and Method for Producing an Organic Light-Emitting Diode - An organic light-emitting diode (08-18-2011
20100123161LIGHT EMITTING DIODE, PRODUCTION METHOD THEREOF AND LAMP - A light emitting diode includes a substrate, a compound semiconductor layer including a light emitting layer formed on the substrate, a first electrode formed on an upper surface of the compound semiconductor layer, and a second electrode formed on the substrate or a semiconductor layer which is exposed by removing at least a portion of the compound semiconductor layer. The first electrode includes a wiring electrode provided on the compound semiconductor layer in contact therewith, an ohmic electrode provided on the compound semiconductor layer in contact therewith, a translucent electrode formed over the compound semiconductor layer to cover the wiring electrode and the ohmic electrode, and a bonding pad electrode connected to the wiring electrode, at least a portion of the bonding pad electrode being exposed from an opening of the translucent electrode to the exterior.05-20-2010
20100123157CIRCUIT BOARD FOR LED - An LED is bonded to a circuit board. The circuit board comprises a chip mounting area, a bonding pad, and a connecting portion. The LED is mounted on the chip mounting area with an adhesive, and the bonding pad is connected with an electrode of the LED. Moreover, the connecting portion is positioned between the chip mounting area and the bonding pad. One side of the connecting portion is connected with the chip mounting area and another side is connected with the bonding pad. With a hollow portion of the connecting portion, the adhesive will be prevented from flowing to the bonding pad.05-20-2010
20110198663STRUCTURE OF LIGHT EMITTING DIODE AND METHOD TO ASSEMBLE THEREOF - A structure of a light emitting diode is provided. In one aspect, a light emitting diode structure comprises a light emitting diode, a conductive frame, and a substrate. The conductive frame is electrically connected to the light emitting diode and has a fixing hole connecting a first side of the conductive frame and a second side of the conductive frame opposite the first side. The fixing hole has a ladder-shaped inner sidewall with a first radius of the inner sidewall adjacent the first side smaller than a second radius of the inner sidewall adjacent the second side. The substrate has a conductive pillar that is received in the fixing hole by entering the fixing hole from the first side of the conductive frame and deformed such that the conductive pillar adheres to the ladder-shaped inner sidewall of the fixing hole.08-18-2011
20090166662III-Nitride Semiconductor Light Emitting Device - The present disclosure relates to a III-nitride semiconductor light emitting device comprising: a plurality of III-nitride semiconductor layers with an active layer generating light by recombination of holes and electrons; and a branch electrode provided with an arm extended from the p-side bonding pad toward the n-side electrode and two fingers branched off toward the n-side electrode from the arm.07-02-2009
20090273001WIRE BONDING TO CONNECT ELECTRODES - A light emitting apparatus includes a semiconductor layer having an electrode with two traces physically separated from one another. The light emitting apparatus further includes a wire bond electrically connecting the two traces.11-05-2009
20090289275Light Emitting Device, Package, Light Emitting Device Manufacturing Method, Package Manufacturing Method and Package Manufacturing Die - Provided is a light emitting device wherein a resin molded body having a circular or an oval recessed section at the center suppresses generation of cracks. A light emitting device (11-26-2009
20090289274PACKAGE STRUCTURE OF LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME - Provided are a LED package structure and a method of manufacturing the same. The LED package structure includes first and second plate-shaped auxiliary support pieces; a heat-dissipating portion formed upwardly higher than the first and second auxiliary support pieces; a plurality of auxiliary leads connected between each of the auxiliary support pieces and a side surface of the heat-dissipating portion, a portion of each of the plurality of auxiliary leads adjacent to the heat-dissipating portion extending along the same level with the top surface of the heat-dissipating portion; and main leads extending from the auxiliary support pieces to the heat-dissipating portion along the same level with the top surface of the auxiliary leads and spaced apart from the heat-dissipating portion, wherein the heat-dissipating portion, the auxiliary support pieces and the main leads are integrally formed using a conductive metallic material. According to the LED package structure, connection leads are integrally formed with a heat-dissipating portion through perforating or bending a metal plate whose central part is thicker than its peripheral part, followed by molding and cutting process, thereby facilitating and simplifying the manufacturing process.11-26-2009
20090273004CHIP PACKAGE STRUCTURE AND METHOD OF MAKING THE SAME - A chip package structure and method thereof uses a semiconductor substrate as a package substrate, which improve heat dissipation. Also, the chip package structure is incorporated with a planarization structure, which renders the chip and the package substrate a substantially planar surface, thereby making formation of a planar patterned conductive layer possible. Accordingly, electrical connections in series or in parallel between chips can be easily implemented by virtue of the planar patterned conductive layer.11-05-2009
20090273003LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A light emitting device comprises a second electrode layer; a second conductivity-type semiconductor layer on the second electrode layer; a current blocking layer comprising an oxide of the second conductivity-type semiconductor layer; an active layer on the second conductivity-type semiconductor layer; a first conductivity-type semiconductor layer on the active layer; and a first electrode layer on the first conductivity-type semiconductor layer.11-05-2009
20090273002LED Package Structure and Fabrication Method - System and method for packaging an LED is presented. A preferred embodiment includes a plurality of thermal vias located through the packaging substrate to effectively transfer heat away from the LED, and are preferably formed along with conductive vias that extend through the packaging substrate. The thermal vias are preferably in the shape of circles or rectangular, and may either be solid or else may encircle and enclose a portion of the packaging substrate.11-05-2009
20090278160RADIATION EMITTING SEMICONDUCTOR DEVICE - The present invention provides a radiation emitting semiconductor device, which comprises an active layer for emitting radiation, a p-type conductive layer, a transparent conductive layer, and a non-p-type ohmic contact layer. The p-type conductive layer is formed on the active layer. The transparent conductive layer is formed on the p-type conductive layer. The non-p-type ohmic contact layer is disposed between said p-type conductive layer and said transparent conductive layer. The non-p-type ohmic contact layer is configured to reduce the operating voltage of said radiation emitting semiconductor device. In addition, the present invention provides that the non-p-type ohmic contact layer is made of a quaternary alloy of Al11-12-2009
20110198662SEMICONDUCTOR CHIP ASSEMBLY WITH POST/BASE HEAT SPREADER AND MULTILEVEL CONDUCTIVE TRACE - A semiconductor chip assembly includes a semiconductor device, a heat spreader, a conductive trace, a substrate and an adhesive. The heat spreader includes a post and a base. The conductive trace includes a pad, a terminal, a conductive pattern and first and second vias. The substrate includes the conductive pattern and a dielectric layer. The semiconductor device is electrically connected to the conductive trace and thermally connected to the heat spreader. The post extends upwardly from the base into an opening in the adhesive and an aperture in the substrate, and the base extends laterally from the post. The conductive trace provides signal routing between the pad and the terminal using the conductive pattern and the vias.08-18-2011
20110198661Method for Ink Jet Printing Organic Electronic Devices - A method of fabricating an organic electronic device using ink jet printing in swathes, comprises depositing an ink into a first set of locations in a column in a first print pass; wherein the first set of locations is less than a total number of locations in the column; and depositing an ink into a second set of locations in the column in a subsequent print pass; wherein the second set of locations is less than a total number of locations in the column. Preferably the number of nozzles used to fill all locations in a column is equal to the number of print passes needed to print the column. All locations in the swathe are printed after all print passes using a regular repeating randomized pattern, such that be ensured that print locations are not under filled, or over filled.08-18-2011
20110198660LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE - Provided is a light emitting device. In one embodiment, a light emitting device including: a support member; a light emitting structure on the support member, the light emitting structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a protective member at a peripheral region of an upper surface of the support member; an electrode including an upper portion being on the first conductive type semiconductor layer, a side portion extended from the upper portion and being on a side surface of the light emitting structure, and an extended portion extended from the side portion and being on the protective member; and an insulation layer between the side surface of the light emitting structure and the electrode.08-18-2011
20090294794Method of manufacturing organic light emitting display and organic light emitting display - A method of manufacturing an organic light emitting display includes: forming a transistor on a substrate; forming a cathode electrode on the transistor to be connected to a source or a drain of the transistor; forming a bank layer having an opening on the cathode electrode; allowing a natural oxide layer to form on the cathode electrode; removing the natural oxide layer from the cathode electrode; forming an insulating buffer layer on the cathode electrode; forming an organic light emitting layer on the insulating buffer layer; and forming an anode electrode on the organic light emitting layer.12-03-2009
20090278161Method of fabricating vertical structure LEDs - A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques. Trenches that define the boundaries of the individual devices are then formed through the semiconductor layers and into the insulating substrate, beneficially by using inductive coupled plasma reactive ion etching. The trenches are then filled with an easily removed layer. A metal support structure is then formed on the semiconductor layers (such as by plating or by deposition) and the insulating substrate is removed. Electrical contacts, a passivation layer, and metallic pads are then added to the individual devices, and the individual devices are then diced out.11-12-2009
20100133578SOLID STATE LIGHTING DEVICE WITH IMPROVED HEATSINK - A solid state lighting device includes a device-scale stamped heatsink with a base portion and multiple segments or sidewalls projecting outward from the base portion, and dissipates all steady state thermal load of a solid state emitter to an ambient air environment. The heatsink is in thermal communication with one or more solid state emitters, and may define a cup-like cavity containing a reflector. At least a portion of each one sidewall portion or segment extends in a direction non-parallel to the base portion. A dielectric layer and at least one electrical trace may be deposited over a metallic sheet to form a composite sheet, and the composite sheet may be processed by stamping and/or progressive die shaping to form a heatsink with integral circuitry. At least some segments of a heatsink may be arranged to structurally support a lens and/or reflector associated with a solid state lighting device.06-03-2010
20100219444Manufacturing method of mounting part of semiconductor light emitting element, manufacturing method of light emitting device, and semiconductor light emitting element - A manufacturing method of a mounting part of a semiconductor light emitting element comprising: preparing a semiconductor light emitting element including an electrode which has a surface, and a board which has a surface; forming a plurality of bump material bodies on at least one of the surface of the electrode and the surface of the board by shaping bump material into islands, wherein the bump material is paste in which metal particles are dispersed, a top surface and a bottom surface of the bump material bodies have different areas, and the top surface is practically flat; solidifying the bump material bodies by thermally processing the bump material bodies; and fixing the semiconductor light emitting element and the board through the bumps.09-02-2010
20090283792SIDE VIEW LIGHT EMITTING DIODE PACKAGE - A side view LED package for a backlight unit includes a package body having a cavity with an inclined inner sidewall, first and second lead frames arranged in the package body, the cavity of the package body exposing a portion of at least one of the first and second lead frames placed in a bottom of the cavity to outside, a light emitting diode chip mounted on the bottom of the cavity to be electrically connected to the first and second lead frames, and a transparent encapsulant arranged in the cavity surrounding the light emitting diode chip. The cavity has a depth larger than a mounting height of the light emitting diode chip and not exceeding six times of the mounting height. The height of the sidewall is shortened to improve beam angle characteristics of emission light, increase light quantity, and prevent a molding defect of the sidewall.11-19-2009
20090283791MULTILAYERED LEAD FRAME FOR A SEMICONDUCTOR LIGHT-EMITTING DEVICE - A lead frame (11-19-2009
20090283790CIRCUIT SUBSTRATE AND LIGHT EMITTING DIODE PACKAGE - A circuit substrate including a base layer and a plurality of lead units arranged as an array is provided, wherein the base layer has a plurality of through grooves, and the lead units are disposed on the base layer. Each of the lead units includes a common terminal and at least three leads. The common terminal is capable of being divided into a plurality of electrodes connected with each other. The leads are extended outwards from the edge of the common terminal, and each of the leads is extended outwards from the edge of one of the electrodes. The through grooves expose the common terminals of the lead units.11-19-2009
20090283788Light-Emitting Diode Chip Package Body and Method for Manufacturing Same - A light-emitting diode chip package body with an excellent heat dissipation performance and a low manufacturing cost, and a packaging method of the same are disclosed. A LED chip package body is provided, the LED chip package body comprising: a LED chip having an electrode-side surface and at least two electrodes mounted on said electrode-side surface; an electrode-side insulating layer formed on said electrode-side surface of said LED chip and formed with a plurality of through-holes registered with corresponding said electrodes; a highly heat-dissipating layer formed in each of said through-holes of said insulating layer on said electrode-side surface; and a highly heat-conducting metal layer formed on said highly heat-dissipating layer in each of said through-holes.11-19-2009
20130099274LIGHT EMITTING ELEMENT - A heat radiation structure of a light emitting element has leads, each lead having a plurality of leg sections, and a light emitting chip mounted on any one of the leads. The present invention can provide a high-efficiency light emitting element, in which a thermal load is reduced by widening a connecting section through which a lead and a chip seating section of the light emitting element are connected, and the heat generated from a heat source can be more rapidly radiated to the outside. Further, the present invention can also provide a high-efficiency light emitting element, in which heat radiation fins are formed between a stopper and a molding portion of a lead of the light emitting element so that natural convection can occur between the heat radiation fins, and an area in which heat radiation can occur is widened to maximize a heat radiation effect.04-25-2013
20130099275LED PACKAGE AND METHOD OF MAKING THE SAME - LED packages and their fabrication techniques are disclosed to provide LED package with improved thermal dissipation based on one or more thermally conductive channels or studs. In one implementation, a LED package includes a plastic body structured to have a hole that penetrates through the plastic body; a metal contact formed on the plastic body at one side of the hole to cover the hole; a LED mounted to the metal contact at a location that spatially overlaps with the hole; and a stud formed in the hole in contact with the metal contact at a first end of the stud and extending to an opening of the hole at a second end of the stud, the stud being formed of a thermally conductive material to transfer heat from the LED through the metal contact and the stud to dissipate the heat at the opening of the hole via the second end of the stud.04-25-2013
20090294792CARD TYPE MEMORY PACKAGE - A card-type memory package is revealed, primarily comprising a substrate, a plurality of gold fingers, at least a memory chip, an LED chip, and an encapsulant. The memory chip and the LED chip are disposed on an encapsulated surface of the substrate with the LED chip adjacent to a rear side of the substrate. The gold fingers are attached to the substrate adjacent to a front side of the substrate. The encapsulant is formed on the encapsulated surface to encapsulate the memory chip and the LED chip with the gold fingers exposed. Therefore, the card-type memory package has the LED indication of reading and writing information with simplified assembling processes.12-03-2009
20090294795LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - A light emitting device includes a light emitting layer made of semiconductor; an upper electrode including a bonding electrode capable of connecting a wire thereto and a thin-wire electrode surrounding the bonding electrode with a spacing and including a junction with the bonding electrode, and a current diffusion layer provided between the light emitting layer and the upper electrode and made of semiconductor, the current diffusion layer including a recess that is formed in a non-forming region of the upper electrode and capable of emitting light emitted from the light emitting layer.12-03-2009
20090294793LED PACKAGE AND METHOD OF MANUFACTURING THE SAME - Provided is an LED package including a heat radiating portion that is composed of two or more metal layers and has a cavity formed therein; a first lead that extends from one side of the heat radiating portion; a second lead that is formed in the other side of the heat radiating portion so as to be separated from the heat radiating portion; a mold portion that fixes the heat radiating portion and the first and second leads; an LED chip that is mounted in the cavity; and a first filler that is filled in the cavity so as to protect the LED chip.12-03-2009
20090294791ELECTRODE FOR SEMICONDUCTOR LIGHT EMITTING DEVICE - An object of the present invention is to provide an electrode that can produce powerful light emission with low driving voltage, without reducing crystallinity.12-03-2009
20100148210PACKAGE STRUCTURE FOR CHIP AND METHOD FOR FORMING THE SAME - An embodiment of the invention provides a package structure for chip. The package structure for chip includes: a carrier substrate having an upper surface and an opposite lower surface; a chip overlying the carrier substrate and having a first surface and an opposite second surface facing the upper surface, wherein the chip includes a first electrode and a second electrode; a first conducting structure overlying the carrier substrate and electrically connecting the first electrode; a second conducting structure overlying the carrier substrate and electrically connecting the second electrode; a first through-hole penetrating the upper surface and the lower surface of the carrier substrate and disposed next to the chip without overlapping the chip; a first conducting layer overlying a sidewall of the first through-hole and electrically connecting the first conducting electrode; and a third conducting structure overlying the carrier substrate and electrically connecting the second conducting structure.06-17-2010
20100219443LED Packaging Structure With Blind Hole Welding Device - The present invention provides a LED packaging structure, and more particularly to an innovative one designed with blind hole welding device. It at least comprises: a packaging body, which is provided with a wiring substrate; metal layers are separately arranged at both sides for coating the wiring substrate; the metal layers are divided into three portions, i.e. metal layer 09-02-2010
20100219442SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THEREOF - Provided is a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device includes a light emitting structure, an insulating substrate, a first electrode, a second electrode, and a conductive supporting substrate. The light emitting structure includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. The insulating substrate is formed on the light emitting structure to include a contact groove. The first electrode is formed on the insulating substrate. The second electrode is formed under the light emitting structure. The conductive supporting substrate is formed under the second electrode.09-02-2010
20110204410LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A light-emitting device includes a substrate and a planarizing film above the substrate. The planarizing film has a recessed portion between non-recessed portions. A bottom electrode layer is above the non-recessed portions. A semiconductor interlayer is above the bottom electrode layer. A filling layer is above the recessed portion. The filling layer comprises a same material as the semiconductor layer and has an inner portion between outer portions. A bank is above the recessed portion of the planarizing film and edge portions of the bottom electrode layer, with each of the edge portions of the bottom electrode layer neighboring the recessed portion of the planarizing film. The filling layer inner portion has a thickness of t08-25-2011
20080272390LED APPARATUS - An LED apparatus comprises a base, an LED device, an electrode member and an insulation layer. The base has a bevel side to be embedded with a corresponding receiving base for electrical conduction of an electrode (e.g., a negative electrode). The LED device is placed on an upper surface of the base. The electrode member comprising a metal rod and an electrode plate is connected to the LED device for electrical conduction of an electrode (e.g., a positive electrode). The insulation layer is placed between the electrode plate of the electrode member and the base for electrical insulation. The bevel side of the base can be modified as desired, and is generally less than 10 degrees, and preferably less than 5 degrees, and may be less than 3 degrees if needed.11-06-2008
20120292657SEMICONDUCTOR LIGHT-EMITTING STRUCTURE - A semiconductor light-emitting structure is provided, which includes a first doped type semiconductor layer, a light-emitting layer, a second doped type semiconductor layer, a first electrical transmission layer and at least one first conductor. The light-emitting layer is disposed on the first doped type semiconductor layer and the second doped type semiconductor layer is disposed on the light-emitting layer. The first electrical transmission layer is disposed on the first doped type semiconductor layer, in which a first interface is formed between the first electrical transmission layer and the first doped type semiconductor layer. The first conductor is disposed on the first doped type semiconductor layer. The first electrical transmission layer connects the first conductor. A second interface is formed between each of the first conductor and the first doped type semiconductor layer, and the resistance of the second interface is less than the resistance of the first interface.11-22-2012
20120292655LIGHT EMITTING DIODE CARRIER - A light emitting diode (LED) carrier assembly includes an LED die mounted on a silicon submount, a middle layer that is thermally conductive and electrically isolating disposed below the silicon submount, and a printed circuit board (PCB) disposed below the middle layer. The middle layer is bonded with the silicon submount and the PCB.11-22-2012
20090008671LED packaging structure with aluminum board and an LED lamp with said LED packaging structure - An LED lamp is provided. The LED lamp has an aluminum board, a buffer substrate, at least a LED chip, a metal layer structure, and heat sink. The aluminum board has a cup structure thereon. The buffer substrate is assembled on a bottom surface of the cup structure. The LED chips are assembled on the buffer substrate. The metal layer structure is formed on a bottom surface of the aluminum board. The metal layer structure is composed of solderable materials. The heat sink is connected to the metal layer structure through solder joint.01-08-2009
20090261375PACKAGE-BASE STRUCTURE OF LUMINESCENT DIODE AND FABRICATING PROCESS THEREOF - A package-base structure of a luminescent diode and its fabricating process. The package-base structure includes a substrate having thereon a holding space; an insulating layer extending from a bottom surface of the holding space to the bottom of the substrate; an through hole defined in the insulating layer; and a conductive layer disposed over the insulating layer. The insulating layer decouples the current flow and heat flow to increase the lifetime of the package-base structure together with the luminescent diode. In the fabricating process, the insulating layer is formed by anodic etching to allow the insulating layer have a porous structure.10-22-2009
20090261374HIGH OUTPUT POWER LIGHT EMITTING DEVICE AND PACKAGED USED THEREFOR - An object of the present invention is to provide a light emitting device that has high output power and long service life where a package is suppressed from discoloring due to heat generation. The light emitting device 10-22-2009
20120086042Light Emitting Device and Method of Manufacturing the Same - A light-emitting device structured so as to increase the amount of light taken out in a certain direction is provided as well as a method of manufacturing this light emitting device. As a result of etching treatment, an upper edge portion of an insulator (04-12-2012
20090166663NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A nitride semiconductor light-emitting device includes, a support substrate 07-02-2009
20120292658SEMICONDUCTOR OPTOELECTRONIC CONVERTING SYSTEM AND THE FABRICATING METHOD THEREOF - The present invention discloses a semiconductor optoelectronic converting system and the fabricating method thereof, the system comprises a supporting module, a heat pipe, a power converting module and a heat-dissipating plate module. The main features of the present invention are that the supporting module has an accommodating space for disposing the heat pipe, and wherein the supporting module and the heat pipe have a common surface for disposing the power converting module thereon. Furthermore, the present invention further decreases the heat resistant therebetween and improves the heat conducting rate and further capable of becoming a rechargeable self-sufficiency lighting system.11-22-2012
20120292656ORGANIC LIGHT EMITTING DEVICE - An organic light emitting device includes a first electrode formed over a substrate, an intermediate layer that is formed over the first electrode and includes an organic light emitting layer, and a second electrode that includes a central electrode unit disposed in a central region and a peripheral electrode unit separated from the central electrode unit and disposed in a peripheral region. The intermediate layer is disposed between the first and second electrodes. The organic light emitting device can readily secure a uniform brightness characteristic.11-22-2012
20110266586LED PACKAGE AND MANUFACTURING METHOD THEREOF - An LED package includes a base, an LED chip, and an encapsulant. The LED chip is mounted on the base, and is enclosed by the encapsulant. The base includes a substrate and a blocking wall integrally formed with the substrate. The blocking wall divides a surface of the substrate into a first bonding area and a second bonding area. An electrically conductive layer and a solder are formed on the bonding area in sequence. The blocking wall can block the first and second solder to overflow outside the first and second bonding area at soldering respectively. A method for manufacturing the LED package is also provided.11-03-2011
20110266588Method for Producing an Organic Radiation-Emitting Component and Organic Radiation-Emitting Component - A method for producing an organic radiation-emitting component is specified, which comprises, in particular, the following method steps: A) providing a first electrode layer (11-03-2011
20110204409hBN INSULATOR LAYERS AND ASSOCIATED METHODS - Electrically insulating layers having increased thermal conductivity, as well as associated devices and methods are disclosed. In one aspect, for example, a printed circuit board is provided including a substrate and an electrically insulating layer coated on at least one surface of the substrate, the electrically insulating layer including a plurality of hBN particles bound in a binder material.08-25-2011
20100102354LIGHT EMITTING DIODE PACKAGE - A light emitting diode (LED) package includes a circuit board and an LED chip. The circuit board has a top circuit layer and an insulating layer. The top circuit layer is disposed on the insulating layer, and the material of the insulating layer is selected from a group consisting of diamond, diamond like coating (DLC), AlN, BN, CrN and TiN. The LED chip is disposed on the circuit board and electrically connected with the top circuit layer of the circuit board. Since the material of the insulting layer is selected from materials with a high thermal conductivity, the heat dissipation performance and light-emitting efficiency of the LED package can be enhanced.04-29-2010
20100102355SEMICONDUCTOR LIGHT EMITTING DEVICE - Embodiments relate to a semiconductor light emitting device. The semiconductor light emitting device according to embodiments comprises a light emitting structure comprising a plurality of compound semiconductor layers; a first electrode under the light emitting structure; a second electrode layer on the light emitting structure; a first insulating layer between the light emitting structure and the second electrode layer; and a metal layer formed under the first insulating layer and electrically connected to the first electrode.04-29-2010
20100283080EXTENSION OF CONTACT PADS TO THE DIE EDGE VIA ELECTRICAL ISOLATION - Light emitting diode (LED) dies are fabricated by forming LED layers including a first conductivity type layer, a light-emitting layer, and a second conductivity type layer. Trenches are formed in the LED layers that reach at least partially into the first conductivity type layer. Electrically insulation regions are formed in or next to at least portions of the first conductivity type layer along the die edges. A first conductivity bond pad layer is formed to electrically contact the first conductivity type layer and extend over the singulation streets between the LED dies. A second conductivity bond pad layer is formed to electrically contact the second conductivity type layer, and extend over the singulation streets between the LED dies and the electrically insulated portions of the first conductivity type layer. The LED dies are mounted to submounts and the LED dies are singulated along the singulation streets between the LED dies.11-11-2010
20080246052Electronic component assembly with composite material carrier - The present invention relates to an electronic component assembly including a composite material carrier, a circuit carrier made of a dielectric material, a circuit with a conductive material formed on the circuit carrier, an intermediate layer between the circuit carrier and the composite material carrier, and an electronic component arranged on the composite material carrier and electrically connecting to the circuit.10-09-2008
20080246051LIGHT EMITTING APPARATUS AND METHOD FOR MANUFACTURING SAME - A light emitting apparatus includes: a light emitting element including a laminated body, an electrode provided on the laminated body, and a pad electrode provided on the electrode, the laminated body including a semiconductor light emitting layer; a mounting member having a metal bonding layer; and an alloy solder containing gold for bonding the pad electrode to the metal bonding layer. The pad electrode has at least a first gold layer provided on the electrode and being thicker than the electrode and a first metal barrier layer provided on the first gold layer, and the melting point of the alloy solder is lower than the melting point of alloys with elements constituting the first metal barrier layer and the alloy solder.10-09-2008
20110198659LIGHT EMITTING DEVICE AND LIGHT UNIT - Provided are a light emitting device and a light unit. The light emitting device includes a package body including a body, a plurality of electrodes on the body, and a concave portion on at least one of the plurality of electrodes, a light emitting chip including a convex portion corresponding to the concave portion to couple and attach the concave portion to the convex portion, the light emitting chip including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, and an adhesion layer on a bottom surface of the light emitting chip.08-18-2011
20100127302LIGHT EMITTING DIODE PACKAGE - A light emitting diode package according to an aspect of the invention may include: a body receiving a light emitting diode; a lead electrically connected to the light emitting diode; and an adapter receiving a modified electrode electrically connected to the lead so that the polarity of the modified electrode is changed into the polarity of the lead, the adapter in which the body is received and fixed.05-27-2010
20090166664HIGH POWER LIGHT EMITTING DIODE PACKAGE AND MANUFACTURING METHOD THEREOF - There is provided a high power LED package and a method of manufacturing the same. The method includes: forming at least one chip mounting part and at least one through hole in a metal plate; forming an insulating layer of a predetermined thickness on an entire outer surface of the metal plate; forming an electrode part to be electrically connected to a light emitting chip mounted on the chip mounting part; and cutting the metal plate along a trimming line to separate the package. The LED package is free from thermal impact resulting from different thermal coefficients among components, thus ensuring stable heat radiation characteristics in a high temperature atmosphere. Also, the LED package is minimized in optical loss to improve optical characteristics. In addition, the LED package is simplified in a manufacturing and assembly process and thus can be manufactured in mass production at a lower cost.07-02-2009
20130214316LED DEVICE WITH STRUCTURE FOR PRECISELY LOCATING LEDS THEREON AND METHOD FOR MANUFACTURING THE SAME - An SMT LED device includes an LED and a circuit board supporting the LED. A pair of first solder pads are formed on the circuit board and spaced from each other. The LED includes two solder slugs extending downwardly from a bottom the LED. A positioning hole is formed at each first solder pad corresponding a position of a corresponding solder slug. A second solder pad is received in the positioning hole. Each solder slug is received in one corresponding positioning hole and electrically connected to corresponding first and second solder pads by a reflow soldering process. The present disclosure also provides a method for manufacturing the SMT LED device.08-22-2013
20120037946LIGHT EMITTING DEVICES - In one aspect of the invention, a light emitting device includes a substrate, and a multilayered structure having an n-type semiconductor layer formed in a light emitting region and a non-emission region on the substrate, an active layer formed in the light emitting region on the n-type semiconductor layer, and a p-type semiconductor layer formed in the light emitting region on the active layer. The light emitting device also includes a p-electrode formed in the light emitting region and electrically coupled to the p-type semiconductor layer, and an n-electrode formed in the non-emission region and electrically coupled to the n-type semiconductor layer. Further, the light emitting device also includes an insulator formed between the n-electrode and the n-type semiconductor layer in the first portion of the non-emission region to define at least one ohmic contact such that the n-electrode in the first portion of the non-emission region is electrically coupled to the n-type semiconductor layer through the at least one ohmic contact.02-16-2012
20130009199Organic Light-Emitting Device Having Homogenous Brightness Distribution - An organic light-emitting device comprising an active layer for producing radiation having a first side surface and a second side surface adjoining a corner edge. A first contact strip extends along the first side surface for injecting charge carriers of a first type into the active layer. A second contact strip extends along the second side surface for injecting charge carriers of a second type into the active layer. The first side surface has a recessed region adjoining the corner edge, and the injection of charge carriers from the first contact strip is suppressed in the recessed region.01-10-2013
20130009197LIGHT EMITTING DIODE HAVING ELECTRODE PADS - Exemplary embodiments of the present invention relate to a including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.01-10-2013
20130009192NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - Provided is a nitride semiconductor light emitting device including p-type nitride semiconductor layer, an n-type nitride semiconductor layer, and an active layer formed therebetween. A contact layer is positioned between the p-type nitride semiconductor layer and a p-side electrode. The contact layer includes a first p-type nitride layer having a first impurity concentration to form ohmic contact with the p-side electrode and a second p-type nitride layer having a second impurity concentration, the second impurity concentration having a concentration lower than the first impurity concentration.01-10-2013
20080283862Side-emission type semiconductor light-emitting device and manufacturing method thereof - A side-emission type semiconductor light-emitting device 11-20-2008
20080290364Semiconductor light-emitting element and a producing method thereof - A semiconductor light-emitting element 11-27-2008
20100025723PACKAGE FOR PROTECTING A DEVICE FROM AMBIENT SUBSTANCES - A package (02-04-2010
20080303051Light emitting device and manufacturing method thereof - The present invention provides a light emitting device loaded with a light emitting semiconductor chip with a protective film formed on a light emitting portion, in which the protective film contains a first dielectric film formed of aluminum oxynitride, a second dielectric film formed of silicon nitride or silicon oxynitride, and a third dielectric film formed of an oxide or a fluoride, the first dielectric film is located more toward the light emitting portion than the second dielectric film, and the second dielectric film is located more toward the light emitting portion than the third dielectric film, and a manufacturing method of the light emitting device.12-11-2008
20100084682OHMIC ELECTRODE AND METHOD THEREOF, SEMICONDUCTOR LIGHT EMITTING ELEMENT HAVING THIS - There are provided an ohmic electrode, which includes a contact layer made of an Al alloy and formed on a nitride-based semiconductor layer functioning as a light emitting layer, a reflective layer made of Ag metal, formed on the contact layer and having some particles in-diffused to the semiconductor layer, and a protective layer formed on the reflective layer to restrain out-diffusion of the reflective layer; a method of forming the ohmic electrode; and a semiconductor light emitting element having the ohmic electrode. The present invention has strong adhesive strength and low contact resistance since the reflective layer and the light emitting layer directly form an ohmic contact due to the interface reaction during heat treatment, and the present invention has high light reflectance and excellent thermal stability since the contact layer and the protective layer restrain out-diffusion of the reflective layer during heat treatment.04-08-2010
20080308833Group III nitride-based compound semiconductor light-emitting device - The refractive index of a titanium oxide layer is modified by adding an impurity (e.g., niobium (Nb)) thereto within a range where good electrical conductivity is obtained. The Group III nitride-based compound semiconductor light-emitting device of the invention includes a sapphire substrate, an aluminum nitride (AlN) buffer layer, an n-contact layer, an n-cladding layer, a multiple quantum well layer (emission wavelength: 470 nm), a p-cladding layer, and a p-contact layer. On the p-contact layer is provided a transparent electrode made of niobium titanium oxide and having an embossment. An electrode is provided on the n-contact layer. An electrode pad is provided on a portion of the transparent electrode. Since the transparent electrode is formed from titanium oxide containing 3% niobium, the refractive index with respect to light (wavelength: 470 nm) becomes almost equal to that of the p-contact layer. Thus, the total reflection at the interface between the p-contact layer and the transparent electrode can be avoided to the smallest possible extent. In addition, by virtue of the embossment, light extraction performance is increased by 30%.12-18-2008
20080303050LIGHT EMITTING MODULE - A light emitting module includes a heat dissipation base, a circuit board and a light emitting diode (LED) package. The supporting surface of the heat dissipation base has a positioning structure. The circuit board is disposed on the supporting surface of the heat dissipation base, and it has an opening for exposing the positioning structure. The LED package is positioned at the positioning structure through the opening and is electrically connected to the circuit board.12-11-2008
20080237624LED PACKAGE WITH METAL PCB - The present invention relates to a light emitting diode (LED) package. An object of the present invention is to provide an LED package having a metal PCB, which has a superior heat dissipation property and a compact structure, does not largely restrict use of conventional equipments, and is compatible with an electronic device or illumination device currently used widely.10-02-2008
20080315238Porous Circuitry Material for Led Submounts - A submount comprising a ceramic substrate and a circuitry arranged thereon is provided. The circuitry comprises an electrically conducting porous material comprising at least one noble metal doped with at least one non-noble metal, the surface of at least portions of said electrically conducting porous material comprises oxides of said non-noble metals, and said ceramic substrate is bonded to said porous electrically conducting material via said oxides of said non-noble metals.12-25-2008
20080296602Light emitting diode - A light emitting diode (LED) includes a substrate, a first type epitaxial layer, a light emitting layer, a second type epitaxial layer and a plurality of nano-particles. The first type epitaxial layer is disposed on the substrate. The light emitting layer is disposed on the first type epitaxial layer. The second type epitaxial layer is disposed on the light emitting layer and has one surface formed with a plurality of recesses and a plurality of protrusions. The nano-particles are disposed on the protrusions of the second type epitaxial layer.12-04-2008
20080290363LIGHT EMITTING DIODE PACKAGE - A light emitting diode (LED) package including a heat dissipation base, an electrical insulating layer, a circuit layer, and an LED chip is provided. The electrical insulating layer is disposed on the heat dissipation base. The circuit layer is disposed on the electrical insulating layer. The circuit layer has a receiving hole extending and passing through the electrical insulating layer for exposing a portion of the heat dissipation base. The LED chip is disposed on the heat dissipation base exposed by the receiving hole and is electrically connected to the circuit layer.11-27-2008
20080237623LIGHT EMITTING DEVICE - A light emitting device includes a pair of electrodes, wherein at least one electrode is transparent or semi-transparent, and an phosphor layer provided between the pair of electrodes, wherein the phosphor layer includes a layer having nitride semiconductor particles, and wherein the nitride semiconductor particles have metal nano structures precipitated in grain boundaries between the nitride semiconductor particles.10-02-2008
20090315063LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - There are provided a light emitting device and a method of manufacturing the same. A light emitting device according to the present invention includes a substrate; an N-type semiconductor layer, an active layer and a P-type semiconductor layer, sequentially formed on the substrate; one or more trenches formed to expose the N-type semiconductor layer by partially removing at least the P-type semiconductor and active layers; a first insulating layer formed on sidewalls of the trenches; and a conductive layer filled in the trenches having the first insulating layer formed therein. According to the present invention, it is possible to obtain a characteristic of uniform current diffusion, and thus, light is uniformly emitted to thereby enhance the light emitting efficiency.12-24-2009
20090315061METHODS OF ASSEMBLY FOR A SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE - Methods of assembly for a semiconductor light emitting device package may include positioning a submount on a mounting substrate with a flux material therebetween and at least substantially free of solder material therebetween. The submount has a metal bonding layer facing the mounting substrate. A semiconductor light emitting device is positioned on a top side of the submount with a flux material therebetween to provide an assembled stack. The assembled stack is reflowed to attach the metal bonding layer of the submount to the mounting substrate and to attach the light emitting device to the submount.12-24-2009
20080277685Light emitting diode package - Provided is a light emitting diode package in accordance with the present invention including a lead frame composed of at least a pair of lead terminals; a mold receiving a part of the lead frame therein and equipped with an irradiation window opened to radiate light, and further including one or more holes formed to expose a part of a bottom surface of the lead frame received in the inside of the mold; an LED chip mounted on the lead frame positioned in the mold; an electrode connection unit for electrically connecting the LED chip and the lead frame; and a molding agent composed of any one selected from transparent epoxy, silicon, and phosphor blends charged in the mold and protecting the LED chip.11-13-2008
20090014747MANUFACTURING METHOD OF LIGHT EMITTING DIODE APPARATUS - A manufacturing method of a light emitting diode (LED) apparatus includes the steps of: forming at least one temporary substrate, which is made by a curable material, on a LED device; and forming at least a thermal-conductive substrate on the LED device. The manufacturing method does not need the step of adhering the semiconductor structure onto another substrate by using an adhering layer, and can make the devices to be in sequence separated after removing the temporary substrate, thereby obtaining several LED apparatuses. As a result, the problem of current leakage due to the cutting procedure can be prevented so as to reduce the production cost and increase the production yield.01-15-2009
20080203421Structured Substrate For a Led - A substrate (08-28-2008
20080272389Infrared Source - A sealed infrared radiation source includes an emitter membrane stimulated by an electrical current conducted through the membrane, which acts like an electrical conductor, wherein the membrane is mounted between first and second housing parts, at least one being transparent in the IR range, each housing part defining a cavity between the membrane and the respective housing part of each side of the membrane. The housing parts are at least partially electrical conductive, and a first of the housing parts is electrically coupled to a first end of the electrical conductor and insulated from the second end of the electrical conductor, the second housing part being electrically coupled to a second end of the electrical conductor and being insulated from the first end of the electrical conductor, thus allowing a current applied from the first housing part to the second housing part to pass through and heat the membrane.11-06-2008
20080265273Light set with heat dissipation means - Disclosed is a light source, which includes a light-permeable casing, a thermoconductor, which is mounted inside the casing and has a flat end portion, a plurality of radiation fins fastened to the periphery of the thermoconductor inside the casing, a light source formed of an array of LEDs and installed in the flat end portion of the thermoconductor inside the casing, and a power unit mounted inside the casing to provide the light source with the necessary working voltage.10-30-2008
20130119430LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided are a vertical-type light emitting device and a method of manufacturing the same. The light emitting device includes a p-type semiconductor layer, an active layer, and an n-type semi-conductor layer that are stacked, a cover layer disposed on a p-type electrode layer to surround the p-type electrode layer, a conductive support layer disposed on the cover layer, and an n-type electrode layer disposed on the n-type semiconductor layer.05-16-2013
20080265272Light Emitting Device Having Zener Diode Therein And Method Of Fabricating The Same - Disclosed are a light emitting device having a zener diode therein and a method of fabricating the light emitting device. The light emitting device comprises a P-type silicon substrate having a zener diode region and a light emitting diode region. A first N-type compound semiconductor layer is contacted to the zener diode region of the P-type silicon substrate to exhibit characteristics of a zener diode together with the P-type silicon substrate. Further, a second N-type compound semiconductor layer is positioned on the light emitting diode region of the P-type silicon substrate. The second N-type compound semiconductor layer is spaced apart from the first N-type compound semiconductor layer. Meanwhile, a P-type compound semiconductor layer is positioned on the second N-type compound semiconductor layer, and an active layer is interposed between the second N-type compound semiconductor layer and the P-type compound semiconductor layer.10-30-2008
20080265270LED ELEMENT FOR AN LED STREAM - An LED element of an LED stream has an LED and a hollow seat for holding the LED. The LED has a body and two pins extended from a bottom face of the body. The hollow seat has two opposite through side holes defined in an outside of the hollow seat. To assembly the LED element, the LED with the two pins upwardly plugs to inside of the hollow seat. Then the two pins respectively and outwardly pass through the corresponding through side hole of the seat until the body is held by an upper portion of the hollow seat.10-30-2008
20080265271LIGHT-EMITTING ELEMENT PACKAGE AND LIGHT SOURCE APPARATUS USING THE SAME - A light-emitting element package including a heat conductive layer having a first surface and a second surface, a dielectric layer disposed on the first surface of the heat conductive layer and having an opening exposing the heat conductive layer, two electrodes disposed on the dielectric layer at a side far away from the heat conductive layer, a light-emitting element, and a transparent sealing layer. The light-emitting element is disposed in the opening, carried on the first surface of the heat conductive layer, and electrically coupled to the two electrodes. The transparent sealing layer encapsulates the light-emitting element, the heat conductive layer, and the two electrodes, and exposes part of the two electrodes and the second surface of the heat conductive layer.10-30-2008
20100140654LIGHT EMITTING ELEMENT MODULE AND METHOD FOR SEALING LIGHT EMITTING ELEMENT - Disclosed is a method for sealing a light-emitting device wherein formation of air bubbles in a light-emitting device module can be prevented by performing no gelation after fitting of a cover member. This method also enables to seal a light-emitting device by using a gel sealing material composed of a gel precursor which uses a solvent. Also disclosed is a light-emitting module formed by such a sealing method. In this method for sealing a light-emitting device, gelation of the gel precursor of a gel sealing material is performed before placing the precursor on the light-emitting device, and thus no gelation is necessary after fitting of a cover member. Consequently, a gel precursor having high viscosity that is difficult to be used in an injection method can be used in this method. Furthermore, a substance which requires use of a solvent can be used as a gel precursor of a gel sealing material. A light-emitting device module with high luminance wherein no air bubbles are included can be obtained by this method.06-10-2010
20080258168Semiconductor light emitting device packages and methods - A submount for a light emitting device package includes a rectangular substrate. A first bond pad and a second bond pad are on a first surface of the substrate. The first bond pad includes a die attach region offset toward a first end of the substrate and configured to receive a light emitting diode thereon. The second bond pad includes a bonding region between the first bond pad and the second end of the substrate and a second bond pad extension that extends from the bonding region along a side of the substrate toward a corner of the substrate at the first end of the substrate. First and second solder pads are a the second surface of the substrate. The first solder pad is adjacent the first end of the substrate and contacts the second bond pad. The second solder pad is adjacent the second end of the substrate and contacts the first bond pad. Related LED packages and methods of forming LED packages are disclosed.10-23-2008
20080258167PACKAGE STRUCTURE FOR LIGHT-EMITTING ELEMENTS - The present invention discloses a package structure for light-emitting elements, wherein a horizontally-extending thermal conductive plate contacts a thermal conductive substrate having a larger heat-dissipating area. Via such a horizontal heat-dissipation mechanism, the heat generated by light-emitting elements is dissipated at a higher rate; thereby, the light-emitting elements have a higher working efficiency and a longer service life.10-23-2008
20100270577PLASTIC COMPONENT FOR A LIGHTING SYSTEMS - The invention relates to a plastic component for use in a lighting system, the plastic component comprising a semi-aromatic polyamide (X) comprising repeat units derived from aliphatic diamines and dicarboxylic acids wherein: (a) the aliphatic diamines consist a mixture of 10-70 mole % of a short chain aliphatic diamine with 2-5 C atoms and 30-90 mole % of a long chain aliphatic diamine with at least 6 C atoms; (b) the dicarboxylic acids consist of a mixture of 5-65 mole % aliphatic dicarboxylic acid and optionally aromatic dicarboxylic acid other than terephthalic acid, and 35-95 mole % terephthalic acid; and (c) the combined molar amount of terephthalic acid and the long chain aliphatic diamine is at least 60 mole %, relative to the total molar amount of the dicarboxylic acids and diamines. The invention also relates to a polymer composition that can be used for making the said plastic component comprising 100 pbw of a semi-aromatic polyamide (X) and 1-250 pbw of an inorganic material.10-28-2010
20090179219SIDE VIEW TYPE LED PACKAGE - In a side view type light emitting diode (LED) package, a lead frame portion and lead frame electrical contact portions are exposed outside a package body to serve as an additional heat dissipation path. The side view type LED package includes an LED chip, a package body having a side surface with an opening for receiving the LED chip, and lead frames for applying a current to the LED chip. The lead frames include inner leads electrically connected to the LED chip within the package body; electrical contact lower legs extending from the inner leads to a lower portion of the package body and exposed outside the package body in the vicinity of a lower surface of the package body perpendicular to the side surface; and a heat dissipation means extending, separately from the electrical contact lower legs, from at least one of the inner leads outside the package body.07-16-2009
20090179218LIGHT EMITTING DEVICE PACKAGE - A light emitting device package including an light emitting device and at least one magnetic source is provided. The light emitting device includes a first doped type layer, a second doped type layer, and a light emitting layer. The light emitting layer is located between the first doped type layer and the second doped type layer. The magnetic source is disposed beside the light emitting device for applying a magnetic field to the light emitting device.07-16-2009
20090179217LIGHT-EMITTING DEVICE WITH MAGNETIC FIELD - A light-emitting device with magnetic-source includes a light emitting stack structure. The light emitting stack structure has a first electrode and a second electrode distributed at a light output side of the light emitting stack structure. A magnetic-source layer is engaged with the light emitting stack structure to provide a magnetic field to the light emitting stack structure in a substantially perpendicular direction to the light emitting stack structure. Alternatively, a method for improving light emitting performance of a light-emitting device includes applying a magnetic field to the light-emitting device at a direction substantially perpendicular to a light emitting area of the light-emitting device.07-16-2009
20090127580LUMINESCENCE DIODE CHIP WITH CURRENT SPREADING LAYER AND METHOD FOR PRODUCING THE SAME - An LED chip is specified that comprises at least one current barrier. The current barrier is suitable for selectively preventing or reducing, by means of a reduced current density, the generation of radiation in a region laterally covered by the electrical connector body. The current spreading layer contains at least one TCO (Transparent Conductive Oxide). In a particularly preferred embodiment, at least one current barrier is contained which comprises material of the epitaxial semiconductor layer sequence, material of the current spreading layer and/or an interface between the semiconductor layer sequence and the current spreading layer. A method for producing an LED chip is also specified.05-21-2009
20110266589Light Emitting Diode Package Structure and Manufacturing Method Therefor - A light emitting diode (LED) package and a manufacturing method therefor are disclosed. In one aspect, a manufacturing method of a light emitting diode package may: heat a first light transmission insulation material to cause the first light transmission insulation material to become a sticky member; connect a lead frame to the sticky member; perform a chip-bonding step that bonds at least one light-emitting diode chip on the sticky member using a light transmission glue; encapsulate the at least one light-emitting diode chip with a second light transmission insulation material; and perform a drying step that forms the sticky member and the second light transmission insulation material into shape.11-03-2011
20090127579Optoelectronic device - An optoelectronic device includes a base, a first and a second stands mounted on the base, a chip mounted on the first stand, a copper wire for bonding the chip to the second stand, and a molding compound mounted on the base. The molding compound encapsulates the first and the second stands, the chip, and the copper wire. The molding compound is made of epoxy resin.05-21-2009
20090026483HIGH-POWER LED PACKAGE - A high-power LED package includes a thermally conductive substrate, a plurality of electric contact pins, and at least one high-power LED. The thermally conductive substrate has a circuit board, a metal plate, and a connecting member connected between the circuit board and the metal plate. The substrate is provided with a plurality of through holes running through the circuit board and the metal plate. The electric contact pins are received in the respective through holes and partially extending out of the through holes. The high-power LED is mounted on the metal plate and electrically connected to the circuit board by means of a plurality of metal wires. Therefore, the metal plate having preferable thermal conductivity can effectively dissipate the heat generated by the high-power LED.01-29-2009
20100200888Silicon-Based Sub-Mount for an Opto-Electronic Device - A package for an optoelectronic device (e.g., a light emitting device such as a LED) includes a sub-mount including a silicon substrate having a thickness in the range of 350 μm-700 μm. The optoelectronic device is mounted on a die attach pad on the front-side surface of the substrate. Feed-through metallization in one or more via structures electrically couples the die attach pad to a contact pad on the back-side surface of the substrate.08-12-2010
20080315239THIN DOUBLE-SIDED PACKAGE SUBSTRATE AND MANUFACTURE METHOD THEREOF - The present invention discloses a manufacture method for a thin double-sided package substrate, which includes steps: providing a carrier; respectively forming a first conductive layer and a second conductive layer on the upper and lower surfaces of the carrier; forming a through-hole penetrating the first conductive layer and the carrier but not penetrating the second conductive layer; setting a conductive element in the through-hole to electrically connect the first conductive layer with the second conductive layer; forming desired circuits on the first conductive layer and/or the second conductive layer; forming a first metal layer on the first conductive layer and/or the second conductive layer; and removing the carrier located in a predetermined region to form a chip receiving bay. The present invention also discloses a package substrate made by the abovementioned manufacture method, which can reduce the overall thickness of a chip package structure, increase the heat-dissipation effect of the chip and prevent the chip package structure from humidity penetration.12-25-2008
20090140283LIGHT EMITTING DEVICE - An object of the present invention is to provide a light emitting device in which variations in an emission spectrum depending on a viewing angle with respect to a side from which luminescence is extracted are decreased. A light emitting device according to the invention has a transistor, an insulating layer covering the transistor and a light emitting element provided in an opening of the insulating layer. The transistor and the light emitting element are electronically connected through a connecting portion. Additionally, the connecting portion is connected to the transistor through a contact hole penetrating the insulating layer. Note that the insulating layer may be a single layer or a multilayer in which a plurality of layers including different substances is laminated.06-04-2009
20090140282Led structure for flip-chip package and method thereof - LED structure can be packaged by using flip-chip package. An LED structure is covered by a conduction enhancing layer. A bumping area definition layer is then formed on the conduction enhancing layer to expose bumping area portions with p-pad and n-pad underneath, and a bumping pad is then formed over the bumping area portions. The bumping area definition layer and then exposed conduction enhancing layer is removed subsequently.06-04-2009
20120139000ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - In an organic light-emitting display apparatus and a method of manufacturing the same, a pad region of the organic light-emitting display apparatus comprises a protrusion layer including a plurality of protrusion portions formed on a substrate so as to protrude, a pad lower electrode and a pad upper electrode, the pad lower electrode including a protrusion portion formed along a protrusion outline of the protrusion layer and a flat portion formed along the substrate, and the pad upper electrode being formed on the flat portion of the pad lower electrode. A source/drain electrode layer is formed on the pad upper electrode, an organic layer is formed on the source/drain electrode layer, and a counter electrode layer is formed on the protrusion portion of the pad lower electrode and the organic layer. The counter electrode layer follows the protrusion outline of the protrusion layer on the protrusion portion. According to such a structure, cost is reduced due to a reduction in the number of masks, the manufacturing process is simplified, and a lifting phenomenon of the organic layer in the pad region is solved.06-07-2012
20090014746SOLDER ALLOYS - Lead-free solder compositions for bonding and sealing flat panel displays, CCD's, solar cells, light emitting diodes, and other optoelectronic devices are disclosed. The solders are based on alloys of Sn, Au, Ag, and Cu and one or more rare earth metals chosen from the following, Y, La, Ce, Pr, Sc, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu. Optionally, the compositions may comprise In, Bi, or Zn. The solder compositions exhibit superior bonding capability in joining dissimilar surfaces such as those present in both the flat panel display and light emitting devices. Additionally the solders provide a strong barrier to the diffusion of both water and oxygen into these devices thus promoting longer device life times.01-15-2009
20090050922Front and rear covering type LED package structure and method for packaging the same - A front and rear covering type LED package structure includes an insulating body, a substrate unit, at least one light-emitting element, and a package colloid. The insulating body has a receiving space. The substrate unit has two electrode pins separated from each other. Each electrode pin has one side covered by the insulating body. Each electrode pin has another side bent into a U-shape and exposed outside the insulating body in order to cover two opposite lateral sides and front and rear sides of the insulating body by a front and rear covering method. The at least one light-emitting element is received in the receiving space and electrically connected with the two electrode pins of the substrate unit. The package colloid is filled into the receiving space of the insulating body.02-26-2009
20090050920CERAMIC WIRING BOARD AND PROCESS FOR PRODUCING THE SAME, AND SEMICONDUCTOR DEVICE USING THE SAME - A ceramic wiring board 02-26-2009
20090321775LED with Reduced Electrode Area - A light source and method for fabricating the same are disclosed. The light source includes a substrate and first and second semiconductor layers that surround an active layer. The first layer includes a material of a first conductivity type adjacent to the substrate. The active layer overlies the first layer and generates light when holes and electrons recombine therein. The second layer includes a material of a second conductivity type overlying the active layer, the second layer having a first surface overlying the active layer and a second surface opposite to the first surface. A trench extends through the second layer and the active layer into the first layer. The trench has electrically insulating walls. A first electrode is disposed in the trench such that the first electrode is in electrical contact with the first layer, and the second electrode is in electrical contact with the second layer.12-31-2009
20090321777SEMICONDUCTOR PACKAGE AND SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor package and a semiconductor light-emitting device including the semiconductor package. The semiconductor package includes: a frame for mounting a semiconductor light-emitting element; and a lead integral with the frame. The frame and the lead are made of a resin. A metal film is located in a predetermined area on the frame.12-31-2009
20090321778FLIP-CHIP LIGHT EMITTING DIODE AND METHOD FOR FABRICATING THE SAME - A flip-chip light emitting diode includes a substrate, an LED chip and a plurality of conductive bumps. The substrate has at least one recess defined in the surface of the substrate, and at least a part of the conductive bumps is embedded the at least one recess. The LED chip is mounted on a surface of the substrate by a flip-chip mounting process. The conductive bumps are sandwiched between the substrate and the LED chip to bond and electrically connect the LED chip to the substrate.12-31-2009
20090039381LIGHT EMITTING DIODE PACKAGE AND METHOD OF MANUFACTURING THE SAME - An LED package is disclosed. The LED package includes a substrate having a plurality of sub patterns adhered by insulation adhesive, an LED chip mounted on the substrate and electrically connected to the substrate and a molding cap covering the LED chip. According to the LED package, as well as simplifying structure, an obstacle is removed at a light course of light emitted from the LED chip, so that light efficiency of the LED chip is improved.02-12-2009
20090050921Light Emitting Diode Array - A one-dimensional array of light emitting diodes (LEDs) is configured to place the LEDs in close proximity to each other, e.g., 150 μm or less and to place at least one side of the LEDs in close proximity to the edge of the substrate, e.g., 150 μm or less. With the LEDs close to the edge of the substrate, multiple one-dimensional arrays may be joined together, side by side, to form a two-dimensional array with the LEDs from adjacent one-dimensional arrays positioned close together. By minimizing the gaps between the LEDs on the same one-dimensional arrays and adjacent one-dimensional arrays, the luminance of the device is improved making the device suitable for high radiance applications. Moreover, using a number of one-dimensional arrays to form a larger two-dimensional array increases yield relative to conventional monolithic two-dimensional arrays.02-26-2009
20110220957SHORTS PREVENTION IN ORGANIC LIGHT-EMITTING DIODES - An organic light emitting diode comprising a first electrode layer, a second electrode layer, a stack of functional layers, including an organic light-emitting layer, sandwiched between said first electrode layer and said second electrode layer, and an passivation layer arranged adjacent to said first electrode layer is disclosed. The passivation layer reacts with the first electrode layer to form an oxide at a reaction temperature that is induced by an evolving short circuit between the first electrode layer and the second electrode layer. The passivation layer is unreactive at temperatures lower than the reaction temperature.09-15-2011
20090050923LIGHT EMITTING DIODE PACKAGE - Provided is an LED package including a printed circuit board (PCB); a conductive structure that is formed on the PCB and is composed of any one selected from a silicon structure and an aluminum structure; and an LED chip that is mounted on the PCB and is electrically connected to the PCB through the conductive structure.02-26-2009
20110220954OPTICAL SEMICONDUCTOR PACKAGE AND OPTICAL SEMICONDUCTOR DEVICE09-15-2011
20090200571Semiconductor light emitting device of junction-down type and semiconductor light emitting element of junction-down type - In a semiconductor light emitting device of junction-down type, a semiconductor light emitting element having a stripe part is provided with a bonding part for die bonding in a part of a surface thereof where the stripe part is formed, the bonding part being at a position away from the stripe part, and being junction-down bonded onto an electrode pattern on a holding substrate.08-13-2009
20090085053Light emitting diode package with large viewing angle - A light emitting diode package with large viewing angle includes a substrate, a LED chip, transparent housing body, and phosphor matrix. The substrate has an upper surface with a first electrode and a second electrode and a lower surface opposite to the upper surface. The LED chip with a positive electrode and an opposite electrode, the LED chip is mounted on the upper surface of the substrate, and connected from the positive electrode to the first electrode of the substrate by wire, and connected from the negative electrode to the second electrode by wire. The transparent housing body is arranged on the upper surface of the substrate, and is formed with a cavity together with the substrate, so that the LED chip is within the cavity. And the phosphor matrix is inserted in the cavity to coat the LED chip, so that the light emitted from the LED chip may turn into white light through the phosphor matrix, and the white light from the LED chip may penetrate the laterals of the transparent housing body.04-02-2009
20110140160LIGHT EMITTING DIODE HAVING ELECTRODE PADS - The present invention relates to a light emitting diode including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the first conductive type semiconductor layer, and an insulation layer disposed between the first conductive type semiconductor layer and the second electrode pad, the insulation layer insulating the second electrode pad from the first conductive type semiconductor layer. At least one upper extension may be electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.06-16-2011
20090101932Semiconductor light-emitting device and method of fabricating the same - The invention provides a semiconductor light-emitting device package structure. The semiconductor light-emitting device package structure includes a substrate, N sub-mounts, and N semiconductor light-emitting die modules, wherein N is a positive integer lager than or equal to 1. Each of the sub-mounts is embedded on the substrate and exposed partially. Each of the semiconductor light-emitting die modules is mounted on the exposed surface of one of the sub-mounts.04-23-2009
20110227123Light Emitting Diode and Method of Fabricating the Same - The present invention relates to a light emitting diode and a method of fabricating the same, wherein the distance between a fluorescent substance and a light emitting diode chip is uniformly maintained to enhance luminous efficiency. To this end, there is provided a light emitting diode comprising at least one light emitting diode chip, lead terminals for use in applying electric power to the light emitting diode chip, and a frame that is used for mounting the light emitting diode chip thereon and is formed to have a predetermined height and a shape corresponding to that of the light emitting diode chip.09-22-2011
20120104453NITRIDE LIGHT EMITTING DEVICE OF USING SUBSTRATE DECOMPOSITION PREVENTION LAYER AND MANUFACTURING METHOD OF THE SAME - A light-emitting device is provided with a substrate decomposition prevention layer using as a matrix at least one selected from the group consisting of boron nitride (B—N), silicon carbide (Si—C), and silicon carbon nitride (Si—C—N), and patterned into a predetermined shape; an n-type nitride clad layer formed on the substrate decomposition prevention layer; a nitride active layer formed on the n-type nitride clad layer; a p-type nitride clad layer formed on the nitride active layer; a p-type ohmic contact layer formed on the p-type nitride clad layer; a p-type electrode pad formed on the p-type ohmic contact layer; an n-type ohmic contact layer electrically connected to the n-type nitride clad layer by means of a patterned region of the substrate decomposition prevention layer; and an n-type electrode pad formed beneath the n-type ohmic contact layer.05-03-2012
20120104452LIGHT EMITTING APPARATUS AND PRODUCTION METHOD THEREOF - A light emitting apparatus comprises an electrically insulating base member; a pair of electrically conductive pattern portions formed on an upper surface of the base member; at least one light emitting device that is electrically connected to the pair of electrically conductive pattern portions; and a resin portion that surrounds at least a side surface of the at least one light emitting device and partially covers the pair of electrically conductive pattern portions. Each of the pair of electrically conductive pattern portions extends toward a periphery of the base member from resin-covered parts of the electrically conductive pattern portions. At least the resin-covered parts of each of the electrically conductive pattern portions has at least one elongated through hole extending in a direction in which the electrically conductive pattern portions extend from the resin-covered parts, wherein the resin portion contacts the base member via the through holes.05-03-2012
20120104451ORGANIC LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - An organic light emitting device and a method for manufacturing the same are provided. The organic light emitting device comprises: a substrate; a first electrode disposed on the substrate; a hole function layer disposed on the first electrode; a first emission layer disposed on the hole function layer; a second emission layer disposed on the first emission layer; an electron function layer disposed on the second emission layer; and a second electrode disposed on the electron function layer, wherein the hole function layer and the first emission layer are melted.05-03-2012
20120104450LIGHT EMITTING DIODE OPTICAL EMITTER WITH TRANSPARENT ELECTRICAL CONNECTORS - An optical emitter includes a Light-Emitting Diode (LED) on a package wafer, transparent insulators, and one or more transparent electrical connectors between the LED die and one or more contact pads on the packaging wafer. The transparent insulators are deposited on the package wafer with LED dies attached using a lithography or a screen printing method. The transparent electrical connectors are deposited using physical vapor deposition, chemical vapor deposition, spin coating, spray coating, or screen printing and may be patterned using a lithography process and etching.05-03-2012
20120104449SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes: a first conductive semiconductor layer including first and second areas; an active layer disposed on the second area; a second conductive semiconductor layer disposed on the active layer; first and second electrode branches disposed on the first and second conductive semiconductor layers, respectively; a first electrode pad electrically connected to the first electrode branch and disposed on the first electrode branch; and a second electrode pad electrically connected to the second electrode branch and disposed on the second electrode branch.05-03-2012
20090166660Lead frame for LED - A lead frame for LED is disclosed to include a body defining an accommodation chamber, a first bracket frame that has a first bottom base mounted in the accommodation chamber and a first connection leg and a second connection respectively extended from the first bottom base to the outside of the body and bent into shape, and a second bracket frame that has a second bottom base mounted in the accommodation chamber and a third connection leg and a fourth connection leg respectively extended from the second bottom base to the outside of the body and bent into shape.07-02-2009
20110140159LIGHT-EMITTING ELEMENT - Disclosed herein is a light-emitting element including: a first conductivity type semiconductor layer; a light-emitting functional layer formed on the first conductivity type semiconductor layer; a second conductivity type semiconductor layer formed on the light-emitting functional layer; a first conductivity type electrode which has continuity with the exposed portion of the first conductivity type semiconductor layer; a second conductivity type electrode which has continuity with the second conductivity type semiconductor layer; an insulating layer which lies between the light-emitting functional layer, second conductivity type semiconductor layer and second conductivity type electrode on one part and the first conductivity type electrode on the other part; and an annex insulating layer annexed to the insulating layer to form a virtual diode having rectifying action in the opposite direction to that of a diode made up of the second conductivity type semiconductor layer, light-emitting functional layer and first conductivity type semiconductor layer.06-16-2011
20090014748METHOD OF ELECTRICALLY CONNECTING ELEMENT TO WIRING, METHOD OF PRODUCING LIGHT-EMITTING ELEMENT ASSEMBLY, AND LIGHT-EMITTING ELEMENT ASSEMBLY - A method of electrically connecting an element to wiring includes the steps of forming a conductive fixing member precursor layer at least on wiring provided on a base, and arranging an element having a connecting portion on the wiring such that the connecting portion contacts the conductive fixing member precursor layer, and then heating the conductive fixing member precursor layer to form a conductive fixing member latter, thereby fixing the connecting portion of the element to the wiring, with the conductive fixing member layer therebetween, wherein the conductive fixing member precursor layer is composed of a solution-tape conductive material.01-15-2009
20090212318NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A nitride-based semiconductor light-emitting device and a manufacturing method thereof are provided. The nitride-based light-emitting device includes a first conductivity type nitride-based semiconductor layer, a light-emitting layer and a second conductivity type nitride-based semiconductor layer, that are successively layered above a translucent base. A first conductivity type electrode layer is electrically connected to the first conductivity type nitride-based semiconductor layer, and a second conductivity type electrode layer is electrically connected to the second conductivity type nitride-based semiconductor layer.08-27-2009
20090212316Surface-mounted optoelectronic semiconductor component and method for the production thereof - A surface-mounted component, comprising an optoelectronic semiconductor chip, a molded body integrally molded onto the semiconductor chip, a mounting area formed at least in places by a surface of the molded body, at least one connection location and side areas of the component which are produced by means of singulation.08-27-2009
20130214323METHOD FOR PRODUCING AT LEAST ONE OPTOELECTRONIC SEMICONDUCTOR COMPONENT - A method of producing an optoelectronic semiconductor component includes providing a carrier having a top side, an underside situated opposite the top side, and a plurality of connection areas arranged at the top side alongside one another in a lateral direction; applying a plurality of optoelectronic components arranged at a distance from one another in a lateral direction at the top side, the components having a contact area facing away from the carrier; applying protective elements to the contact and connection areas; applying an electrically insulating layer to exposed locations of the carrier, contact areas and protective elements; producing openings in the insulating layer by removing protective elements; and arranging an electrically conductive material on the insulating layer and in the openings, wherein the electrically conductive material connects a contact area to an assigned connection area.08-22-2013
20110140162CONDUCTIVE ADHESIVE AND LED SUBSTRATE USING THE SAME - Provided are a conductive adhesive capable of ensuring both conductive properties and adhesion properties and an LED substrate using the conductive adhesive. The conductive adhesive contains a conductive filler, a binder resin, and a solvent as main components thereof, and the conductive filler contains a metal powder having an average particle size of 2 to 30 μm as a main component thereof and contains ultrafine metal particles having an average particle size of 100 nm or less.06-16-2011
20090230423REINFORCED CHIP PACKAGE STRUCTURE - A reinforced chip package structure includes a light emitting element, a base, and a package member. The base has a base deck and a jutting bearing deck on the base deck to hold the light emitting element. The base deck and the bearing deck are interposed by an elevation difference section. On the elevation difference section, there is an annular retaining structure. The package member is located on the base and covers at least the bearing deck and the retaining structure. The package member has an anchor structure corresponding to the retaining structure. The retaining structure and the anchor structure are coupled together to harness the base and the package member from moving against each other. Thus the base and package member form a reinforced bonding between them without separating from each other when subject to external forces, therefore provide improved protection for the light emitting element.09-17-2009
20090230422SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR PRODUCING THE SAME - A semiconductor light-emitting element includes, a first semiconductor layer, a second semiconductor layer, a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer, a first electrode connected to the first semiconductor layer, and a second electrode provided on the second semiconductor layer. A side of the second electrode facing to the second semiconductor layer is composed of at least any one of silver and silver alloy. The second electrode has a void having a width of emission wavelength or less of the light-emitting layer in a plane of the second electrode facing to the second semiconductor layer.09-17-2009
20090230420Housing Body and Method for Production Thereof - A package body (09-17-2009
20090101933Semiconductor light emitting device and fabrication method of the semiconductor light emitting device - A semiconductor light emitting device which can control of current density and can optimize current density and in which a rise in luminosity is possible, and a fabrication method of the semiconductor light emitting device are provided. The semiconductor light emitting device including: a semiconductor substrate structure including a semiconductor substrate, a first metal layer placed on a first surface of the semiconductor substrate, and a second metal layer placed on a second surface of the semiconductor substrate; and a light emitting diode structure including a third metal layer placed on the semiconductor substrate structure, a current control layer placed on the third metal layer and composed of a transparent insulating film and a current control electrode, an epitaxial growth layer placed on the current control layer, and a surface electrode placed on the epitaxial growth layer, wherein the semiconductor substrate structure and the light emitting diode structure are bonded by using the first metal layer and the third metal layer.04-23-2009
20080315240III-Nitride Semiconductor light Emitting Device - The present disclosure relates to an III-nitride semiconductor light emitting device, particularly, an electrode structure thereof. The III-nitride semiconductor light emitting device includes a substrate, a plurality of III-nitride semiconductor layers grown on the substrate, and composed of a first III-nitride semiconductor layer with first conductivity, a second III-nitride semiconductor layer with second conductivity different from the first conductivity, and an active layer positioned between the first III-nitride semiconductor layer and the second III-nitride semiconductor layer, for generating light by recombination of electrons and holes, and a hole passing through the substrate and the plurality of III-nitride semiconductor layers.12-25-2008
20080315237Gallium Nitride-Based Compound Semiconductor Light Emitting Device - This gallium nitride-based compound semiconductor light emitting device includes an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer that are composed of gallium nitride-based compound semiconductors and are deposited in that order on a substrate, and further includes a negative electrode and a positive electrode that are in contact with the n-type semiconductor layer and the p-type semiconductor layer, respectively, wherein the positive electrode has a translucent electrode composed of a three-layer structure including a contact metal layer that contacts at least the p-type semiconductor layer, a current diffusion layer provided on the contact metal layer and having conductivity greater than that of the contact metal layer, and a bonding pad layer provided on the current diffusion layer, and a mixed positive electrode-metal layer including a metal that forms the contact metal layer is present in a positive electrode side surface of the p-type semiconductor layer.12-25-2008
20090095975LIGHT EMITTING DIODE PACKAGE - A light emitting diode package for preventing an electric short circuit among semiconductor layers and with excellent bonding strength. The light emitting diode package includes a package substrate, a light emitting diode chip bonded to an upper surface of the package substrate, and a bonding material for bonding the light emitting diode chip to the package substrate. The package substrate has a recess formed in a bonding surface thereof to accommodate the bonding material.04-16-2009
20090095974SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD THEREOF - A semiconductor package including a base body having a recessed portion for installing an electronic component on one surface, the recessed portion including an inner bottom surface, inclined surface and a shoulder part and a wiring pattern having one end positioned in the inner bottom surface of the recessed portion and the other end extending to an outside region of the recessed portion beyond the shoulder part of the recessed portion. The shoulder part of the recessed portion is a smoothly curved surface.04-16-2009
20090095972LIGHT-EMITTING DEVICE - A light-emitting device is provided in a light-emitting element with a bonding wire that is a fine metallic wire formed mainly of gold or copper and coated at least partly with a substance capable of heightening a reflection coefficient of a wavelength of light emitted from the light-emitting element.04-16-2009
20090184336SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREFOR - A semiconductor light emitting device includes: a semiconductor layer; an insulating film on the semiconductor layer and having an opening; a multilayer adhesive layer on the insulating film; and a Pd electrode in contact with the semiconductor layer through the opening and in contact with the multilayer adhesive layer. The multilayer adhesive layer includes an Au layer at the top and an alloy of Au and Pd at the interface between the Au layer and the Pd electrode.07-23-2009
20090242927SEMICONDUCTOR LIGHT EMITTING MODULE AND METHOD FOR MANUFACTURING THE SAME - A light emitting module includes a semiconductor light source, a first lead with a bonding pad to which the light source is attached, and a second lead spaced from the first lead in a first direction contained in the plane of the first die bonding pad. The second lead includes a wire bonding pad connected to the light source via a wire. The module also includes a case formed with a space elongated in the first direction for accommodating the light source. The first lead includes an extension extending from the first die bonding pad, and a mounting terminal connected to the extension. The extension extends in a second direction that is perpendicular to the first direction and contained in the plane of the first die bonding pad. The mounting terminal extends perpendicularly to the second direction. The extension overlaps the light source in the first direction.10-01-2009
20090242925SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND PROCESS FOR PRODUCTION THEREOF - The present invention provides a semiconductor light-emitting element comprising an electrode part excellent in ohmic contact and capable of emitting light from the whole surface. An electrode layer placed on the light-extraction side comprises a metal part and plural openings. The metal part is so continuous that any pair of point-positions in the part is continuously connected without breaks, and the metal part in 95% or more of the whole area continues linearly without breaks by the openings in a straight distance of not more than ⅓ of the wavelength of light emitted from an active layer. The average opening diameter is of 10 nm to ⅓ of the wavelength of emitted light. The electrode layer has a thickness of 10 nm to 200 nm, and is in good ohmic contact with a semiconductor layer.10-01-2009
20090242924LIGHT EMITTING DIODES WITH SMOOTH SURFACE FOR REFLECTIVE ELECTRODE - A light emitting diode comprising an epitaxial layer structure, a first electrode, and a second electrode. The first and second electrodes are separately disposed on the epitaxial layer structure, and the epitaxial layer structure has a root-means-square (RMS) roughness less than about 3 at a surface whereon the first electrode is formed.10-01-2009
20090242926PACKAGE FOR OPTICAL SEMICONDUCTOR ELEMENT - A package for an optical semiconductor element is provided. The package includes: a stem body having a sealing hole therein; and a lead pin having a glass sealing portion which is sealed with sealing glass in the sealing hole. Characteristic impedance of the glass sealing portion is adjusted to a given value. The characteristic impedance Zo is given by: Zo=(138/Er10-01-2009
20090256170SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME - A semiconductor light emitter (A) includes an n-type semiconductor layer (10-15-2009
20120193670LIGHT EMITTING DEVICE HAVING WAVELENGTH CONVERTING LAYER AND METHOD OF FABRICATING THE SAME - A light emitting device having a wavelength converting layer. The light emitting device includes a substrate; a semiconductor stack having a first conductive-type semiconductor layer, an active layer and a second conductive-type semiconductor layer disposed on the substrate; a first wavelength converting layer covering a top of the semiconductor stack; and a second wavelength converting layer disposed on the first wavelength converting layer and having a width narrower than the first wavelength converting layer. The second wavelength converting layer is employed, thereby being capable of reducing a color variation according to a viewing angle.08-02-2012
20120193673LIGHT-EMITTING DEVICES - Light-emitting devices are provided, the light-emitting devices include a light-emitting structure layer having a first conductive layer, a light-emitting layer and a second conductive layer sequentially stacked on a first of a substrate, a plurality of seed layer patterns formed apart each other in the first conductive layer; and a plurality of first electrodes formed through the substrate, wherein each of the first electrodes extends from a second side of the substrate to each of the seed layer patterns.08-02-2012
20120193672METHOD OF FABRICATING LIGHT-EMITTING APPARATUS WITH IMPROVED LIGHT EXTRACTION EFFICIENCY AND LIGHT-EMITTING APPARATUS FABRICATED USING THE METHOD - Provided are a method of fabricating a light-emitting apparatus with improved light extraction efficiency and a light-emitting apparatus fabricated using the method. The method includes: preparing a monocrystalline substrate; forming an intermediate structure on the substrate, the intermediate structure comprising a light-emitting structure which comprises a first conductive pattern of a first conductivity type, a light-emitting pattern, and a second conductive pattern of a second conductivity type stacked sequentially, a first electrode which is electrically connected to the first conductive pattern, and a second electrode which is electrically connected to the second conductive pattern; forming a polycrystalline region, which extends in a horizontal direction, by irradiating a laser beam to the substrate in the horizontal direction such that the laser beam is focused on a beam-focusing point within the substrate; and cutting the substrate in the horizontal direction along the polycrystalline region.08-02-2012
20120193671LIGHT-EMITTING DIODE DEVICE AND METHOD FOR MANUFACTURING THE SAME - A light-emitting diode device and a method for manufacturing the same are described. The light-emitting diode device includes a metal heat dissipation bulk, a frame, a light-emitting diode chip and a package encapsulant. The metal heat dissipation bulk includes a curve protrusion ring. The frame is disposed on the metal heat dissipation bulk outside the curve protrusion ring. The frame includes at least two electrode pads respectively disposed at two sides of the curve protrusion ring. The light-emitting diode chip is disposed on the metal heat dissipation bulk in an inner side of the curve protrusion ring. The light-emitting diode chip has a first electrode and a second electrode of different conductivity types, and the first electrode and the second electrode are electrically connected to the electrode pads respectively. The package encapsulant encapsulates the light-emitting diode chip, the curve protrusion ring, and a portion of each electrode pad.08-02-2012
20100264453SEMICONDUCTOR CHIP PAD STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor chip pad structure and a method for manufacturing the same, wherein a flat area at the center of the terminal pad and a roughened area at the periphery thereof are provided by use of the mask photolithograph technique and the roughening process. The central area provides a sufficient adhering force for the ball bond while the peripheral area prevents the wire-bonding vibrating energy from the lateral transmission to the external side of the terminal pad. In this way, the ball bond for the terminal pad may meet the wire-bonding requirements. Moreover, the ball bond quality is ensured.10-21-2010
20090315064Light emission device - A light emission device includes a substrate, at least one light-emitting diode (LED), and a plurality of electrical connection elements. The substrate defines a plurality of pilot holes, each having a conductive layer formed in a circumference thereof. The LED is set on the substrate and has a plurality of terminals each forming a through hole corresponding to a respective pilot hole of the substrate. Each electrical connection element is arranged between the conductive layer of each pilot hole of the substrate and each terminal of the LED. The electrical connection element is molten by being heated to form an electric connection portion, which attaches to the conductive layer of the pilot hole and the terminal of the light-emitting diode. In this way, precise positioning between the substrate and the LED is realized, bonding strength is enhanced, and overall thickness is reduced.12-24-2009
20110127566LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - Disclosed is a light emitting device and a method of manufacturing the same. The light emitting device includes a body, a first electrode installed in the body and a second electrode separated from the first electrode, a light emitting chip formed on one of the first and second electrodes, and electrically connected to the first and second electrodes, and a protective cap projecting between the first and second electrodes.06-02-2011
20100148211LIGHT EMITTING DIODE PACKAGE STRUCTURE - A light emitting diode (LED) package structure including a leadframe, a housing, a LED chip and a light-transmissive encapsulant is provided. The leadframe has a first electrode and a second electrode separated from each other. The housing wraps the first electrode and the second electrode and includes a recess having a bottom and a sidewall. The bottom of the recess has a cover layer covering the leadframe and having an opening exposing an end of the first electrode, an end of the second electrode and a spacer disposed therebetween and connected thereto wherein the spacer, the end of the first electrode and the end of the second electrode are substantially coplanar. The LED chip is disposed in the recess and electrically connected to leadframe. The light-transmissive encapsulant is filled in the recess.06-17-2010
20100163916FULL-COVER LIGHT-EMITTING DIODE LIGHT BAR AND METHOD FOR MANUFACTURING THE SAME - In a full-cover light-emitting diode light bar that can withstand a large bending deformation, a first lead and a second lead are juxtaposed with a distance. An insulating layer having a slot is formed on the first lead and the second lead via a hot pressing process. A crystal-receiving section of the first lead is displayed in the slot, and a connecting section of the second lead is displayed in the slot. A light-emitting diode crystal has a first electrode and a second electrode. Then, the light-emitting diode crystal is disposed in the slot with the first electrode being electrically fixed to the crystal-receiving section. The second electrode of the light-emitting diode crystal is electrically connected to the connecting section via a metallic lead. A light-transmitting body is used to seal the slot. Via the above process, a full-cover light-emitting diode light bar is formed.07-01-2010
20100148209LIGHT-EMITTING DEVICE AND ELECTRONIC DEVICE - An object is to provide a light-emitting device having a structure in which an external connection portion can easily be connected and a method for manufacturing the light-emitting device. A light-emitting device includes a lower support 06-17-2010
20090090928LIGHT EMITTING MODULE AND METHOD FOR MANUFACTURING THE SAME - Provided are: a light emitting module capable of ensuring a high heat-dissipating property and mountable in any of sets in various shapes; and a method for manufacturing the light emitting module. The light emitting module mainly includes: a metal substrate; an insulating layer covering the upper surface of the metal substrate; a conductive pattern formed on the upper surface of the insulating layer; and a light emitting element fixedly attached to the upper surface of the metal substrate and electrically connected to the conductive pattern. Furthermore, a groove is formed in the metal substrate, and then the metal substrate is bent. Thus, a bent portion is formed in the metal substrate.04-09-2009
20100155771LIGHT EMITTING DEVICE - A light emitting device includes a first lead and a second lead. The first lead has a top surface which a light emitting element is mounted thereon and a bottom surface opposed to the top surface. The second lead has a lead peripheral region where a wire connected to an electrode of the light emitting element is bonded therewith. The first lead includes a lead middle region where the semiconductor light emitting element is mounted thereon to thermally conduct therewith. A bottom surface of the lead middle region is exposed from a package. The second lead has an outer lead region that is projected outwardly from the both side surfaces of the package. The bottom surface of the first lead middle region is substantially coplanar with a bottom surface of the outer lead region.06-24-2010
20100155770MULTILAYERED LEAD FRAME FOR A SEMICONDUCTOR LIGHT-EMITTING DEVICE - A lead frame (06-24-2010
20100155766LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - An LED includes a bowl-like substrate, three posts embedded within the substrate, an LED die bonded to a middle post, a pair of spiral gold wires interconnecting two electrodes of the LED die and two lateral posts, and an encapsulant sealing the LED die and fixed on the substrate. The two wires are further wound around two columns protruded upwardly from the substrate, respectively. The two columns may be made integrally with the substrate, or be employed as upper portions of the two lateral posts in the case of the two lateral posts extending upwardly beyond the substrate.06-24-2010
20100187560METHOD FOR BONDING METAL SURFACES, METHOD FOR PRODUCING AN OBJECT HAVING CAVITIES, OBJECT HAVING CAVITIES, STRUCTURE OF A LIGHT EMITTING DIODE - A method for bonding two partially form-fitting surfaces of two metal bodies which contain the same metal is carried out by generating a first layer on the surface of a first one of the two bodies, the first layer containing a mixture of the metal and the oxide of the metal; generating a second layer on the first layer, the second layer containing the metal but less oxide of the metal than does the first layer; placing the partially form-fitting surfaces of the two metal bodies adjacent to each other; heating the bodies placed adjacent to each other to a temperature which lies in a target range below the melting point of the metal and above the eutectic temperature of the eutectic of the metal and the metal oxide; and holding the temperature within the target range over a predetermined or a controllable duration of time.07-29-2010
20100258837SEMICONDUCTOR LIGHT EMITTING ELEMENT AND SEMICONDUCTOR LIGHT EMITTING DEVICE USING THE SAME - In a semiconductor light emitting device, in which a light emitting layer is formed on one surface of a conductive substrate, and an n-type electrode and a p-type electrode are formed on the same side as the light emitting layer, there has been the problem that, if larger electric power is applied, heat is generated near the n-side electrode to reduce luminous efficiency.10-14-2010
20100258835LIGHT EMITTING DIODE DEVICE HAVING UNIFORM CURRENT DISTRIBUTION AND METHOD FOR FORMING THE SAME - A semiconductor is disclosed. The semiconductor may include a transparent layer having a first surface. The semiconductor may further include a first doped layer formed over the first surface of the transparent layer. The first doped layer may have a plurality of first-type metal electrodes formed thereon. The semiconductor may further include a second doped layer formed over the first surface of the transparent layer. The second doped layer may have a plurality of second-type metal electrodes formed thereon. The semiconductor may also include an active layer formed over the first surface of the transparent layer and disposed between the first doped layer and the second doped layer. The first-type metal electrodes and the second-type metal electrodes may be alternately arranged and the distances between each first-type metal electrode and its adjacent second-type metal electrodes may be substantially equal.10-14-2010
20100258838PACKAGING SUBSTRATE DEVICE, METHOD FOR MAKING THE PACKAGING SUBSTRATE DEVICE, AND PACKAGED LIGHT EMITTING DEVICE - A packaging substrate device includes: a first laminate including a first ceramic substrate and a first copper pattern disposed on an upper surface of the first ceramic substrate; and a second laminate disposed over the first copper pattern and including a second ceramic substrate, a second copper pattern that is disposed on an upper surface of the second ceramic substrate, and a through hole extending through the second ceramic substrate and the second copper pattern to expose a copper portion of the first copper pattern. A light emitting semiconductor die can be mounted on the copper portion within the through hole. Efficient heat dissipation can be achieved through the first laminate.10-14-2010
20100258836LIGHT-EMITTING DEVICE - A light-emitting device includes a substrate; a stacked structure including a first type semiconductor layer positioned on the substrate, a light-emitting structure positioned on the first type semiconductor layer, and a second type semiconductor layer positioned on the light-emitting structure, wherein the stacked structure includes a depression exposing the first type semiconductor layer; a first electrode positioned on the first type semiconductor layer in the depression, the first electrode including at least one first pad and at least one first extending wire with one end connected to the first pad; a second electrode positioned on the second type semiconductor layer, the second electrode including at least one second pad and at least one second extending wire with one end connected to the second pad; wherein the distance between the first pad and the second pad is greater than 70% of the width of the light-emitting device.10-14-2010
20100187561ELECTRONIC DEVICE - An electronic device includes a carrier, a surface mounting device, and solders. The carrier has a plurality of bonding pads, and at least one of the bonding pads has a notch, such that the bonding pad has a necking portion adjacent to the notch. The surface mounting device is disposed on the carrier. Besides, the surface mounting device has a plurality of leads, and each of the leads is connected to the necking portion of one of the bonding pads, respectively. The notch of each of the bonding pads is located under one of the leads. The solders connect the bonding pads and the leads.07-29-2010
20130214315LIGHT EMITTING DIODE PACKAGE AND METHOD OF FABRICATING THE SAME - A light emitting diode package and a method of fabricating the same. The package includes a light emitting diode chip having a first surface and a second surface opposing the first surface, a metal frame (or TAB tape) having leads connected to the light emitting diode chip, and a light-previous encapsulant encapsulating the light emitting diode chip, wherein the second surface of the chip is exposed from the first light-previous encapsulant. The metal frame (or TAB tape) connects the light emitting diode chip to an external circuit board. The LED package does not need wire-bonding process. A method of fabricating a light emitting diode package is also provided.08-22-2013
20130214317NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - There is provided a nitride semiconductor light emitting device including: a light emitting structure having n-type and p-type nitride semiconductor layers and an active layer formed therebetween; n-type and p-type electrodes electrically connected to the n-type and p-type nitride semiconductors, respectively; and an n-type ohmic contact layer formed between the n-type nitride semiconductor layer and the n-type electrode and having a first layer formed of a material containing In and a second layer formed on the first layer and formed of a material containing W.08-22-2013
20090078959Solid-state optical device - A solid-state optical device includes a solid-state element, a power supplying/retrieving portion on which the solid-state element is mounted, the power supplying/retrieving portion supplying or retrieving electric power to/from the solid-state element, and a glass sealing material that seals the solid-state element. The glass sealing material has a thermal expansion coefficient equivalent to that of the power supplying/retrieving portion. The glass sealing material includes a P03-26-2009
20130214318LIGHT-EMITTING DEVICE - A light-emitting device includes a substrate; a stacked structure including a first type semiconductor layer positioned on the substrate, a light-emitting structure positioned on the first type semiconductor layer, and a second type semiconductor layer positioned on the light-emitting structure, wherein the stacked structure includes a depression exposing the first type semiconductor layer; a first electrode positioned on the first type semiconductor layer in the depression, the first electrode including at least one first pad and at least one first extending wire with one end connected to the first pad; a second electrode positioned on the second type semiconductor layer, the second electrode including at least one second pad and at least one second extending wire with one end connected to the second pad; wherein the distance between the first pad and the second pad is greater than 70% of the width of the light-emitting device.08-22-2013
20130214319LIGHT EMITTING DEVICE, METHOD OF FABRICATING THE SAME AND LIGHTING SYSTEM HAVING THE SAME - Disclosed is a light emitting device. The light emitting device includes a substrate including a plurality of lead electrodes; a mold member including a cavity on the substrate; a light emitting chip in the cavity and on at least one of the lead electrodes; a connecting member for electrically connecting at least one of the lead electrodes to the light emitting chip; a resin member in the cavity; a spacer part between the lead electrodes, the spacer part including a material different from materials of the mold member and the resin member; and an adhesive film between the mold member and the substrate.08-22-2013
20130214320SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR PRODUCING THE SAME - In a method for producing a semiconductor light emitting device: a semiconductor lamination of first and second semiconductor layers having different conductive types is formed; a portion of the semiconductor lamination is removed to expose an area of a surface of the first semiconductor layer; a conductor layer connecting the first and second semiconductor layers is formed; a first electrode is formed on the exposed areas of the first semiconductor layer and a second electrode is formed on an upper surface of the second semiconductor layer; a barrier layer covering at least one of the first and second electrodes is formed; and a connection part in the conductor layer connecting the first and second semiconductor layers is removed.08-22-2013
20130214321SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD OF MANUFACTURING THE SAME, AND VEHICLE LIGHTING UNIT UTILIZING THE SAME - There is provided a highly reliable semiconductor light emitting element and vehicle lighting unit as well as associated methods. The semiconductor light emitting element can include a support substrate, a semiconductor stacked body including a first semiconductor layer of a first conductivity type, an active layer formed on the first semiconductor layer, and a second semiconductor layer of a second conductivity type formed on the active layer. The element can further include a bonding layer configured to bond the support substrate and the semiconductor stacked body, the bonding layer having a side surface that forms an angle exceeding 90° with a surface of the bonding layer on the side of the semiconductor stacked body, and an interconnection layer configured to extend from the upper surface of the semiconductor stacked body to cover the side surface of the bonding layer.08-22-2013
20130214322Radiation-Emitting Semiconductor Chip and Method for Producing a Radiation-Emitting Semiconductor Chip - A radiation-emitting semi-conductor chip has a substrate and a semiconductor body arranged on the substrate and with a semiconductor layer sequence that includes an active region provided for producing radiation, an n-type region, and a covering layer arranged on a side of the n-type region that faces away from said active region. There is a contact structure arranged on the covering layer for the external electrical contacting of the n-type region. The covering layer has at least one recess through which the contact structure extends to the n-type region.08-22-2013
20100187562LIGHT-EMITTING DEVICE PACKAGE STRUCTURE AND MANUFACTURING METHOD THEREOF - A light-emitting device package structure includes a leadframe, a light-emitting device disposed on the leadframe, a plurality of wires electrically connecting the leadframe and the light-emitting device, and an encapsulant covering the light-emitting device, the wires and a part of the leadframe. The encapsulant has a gas space therein, and the gas space is disposed on the light-emitting device, wherein the gas space includes at least one gas.07-29-2010
20100187563SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREFOR - An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. A method for producing a semiconductor device in which silver or silver oxide provided on a surface of a base and silver or silver oxide provided on a surface of a semiconductor element are bonded, includes the steps of arranging a semiconductor element on a base such that silver or silver oxide provided on a surface of the semiconductor element is in contact with silver or silver oxide provided on a surface of the base, temporarily bonding the semiconductor element and the base by applying a pressure or an ultrasonic vibration to the semiconductor element or the base, and permanently bonding the semiconductor element and the base by applying heat having a temperature of 150 to 900° C. to the semiconductor device and the base.07-29-2010
20100187559SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME - Provided is a semiconductor light emitting device and a method of fabricating the same. The semiconductor light emitting device comprises: a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; a second conductive semiconductor layer on the active layer; a second electrode part on the second conductive semiconductor layer; an insulation layer on the second electrode part; and a first electrode part on the insulation layer, a portion of the first electrode part being electrically connected to the first conductive semiconductor layer.07-29-2010
20100187557Light Sensor Using Wafer-Level Packaging - The present invention provides systems, devices and methods for fabricating miniature low-power light sensors. With the present invention, a light sensitive component, such as a diode, is fabricated on the front side of a silicon wafer. Connectivity from the front side of the wafer to the back side of the wafer is provided by a through silicon via. Solder bumps are then placed on the back side of the wafer to provide coupling to a printed circuit board. The techniques described in the present invention may also be applied to other types of semiconductor devices, such as light-emitting diodes, image sensors, pressure sensors, and flow sensors.07-29-2010
20100155768SEMICONDUCTOR CHIP ASSEMBLY WITH POST/BASE HEAT SPREADER AND CAVITY IN POST - A semiconductor chip assembly includes a semiconductor device, a heat spreader, a conductive trace and an adhesive. The heat spreader includes a post and a base. The semiconductor device extends into a cavity in the post, is electrically connected to the conductive trace and is thermally connected to the heat spreader. The post extends upwardly from the base into an opening in the adhesive, and the base extends laterally from the post. The adhesive extends between the post and the conductive trace and between the base and the conductive trace. The conductive trace is located outside the cavity and provides signal routing between a pad and a terminal.06-24-2010
20100213498LIGHT EMITTING PACKAGE CONTROLLING COLOR TEMPERATURE, FABRICATING METHOD THEREOF, COLOR TEMPERATURE CONTROLLING METHOD OF LIGHT EMITTING PACKAGE - Provided are a light emitting package capable of controlling a color temperature, a fabricating method thereof, and a color temperature controlling method of the light emitting package. The light emitting package includes a package body, a first electrode and a second electrode formed on the package body and spaced apart from each other, a light emitting element formed on the package body and electrically connected to the first electrode and the second electrode, and a thin film resistor connected in series to the first electrode.08-26-2010
20100176417LIGHT EMITTING DIODE PACKAGE STRUCTURE AND METHOD FOR FABRICATING THE SAME - A light emitting diode and method for fabricating the same are provided. The light emitting diode comprises a lead frame. A first material body is formed on the lead frame, wherein the first material body comprises a tip, an inner surface and an outer surface. A second material body is formed on the lead frame to completely cover the outer surface of the first material body. Particularly, the first material body comprises hydrophilic polymer and the second material body comprises hydrophobic polymer.07-15-2010
20100193830SEMICONDUCTOR CHIP ASSEMBLY WITH POST/BASE HEAT SPREADER AND DUAL ADHESIVES - A semiconductor chip assembly includes a semiconductor device, a heat spreader, a conductive trace and first and second adhesives. The semiconductor device is electrically connected to the conductive trace and thermally connected to the heat spreader. The heat spreader includes a post and a base. The post extends upwardly from the base through an opening in the first adhesive, and the base extends laterally from the post. The first adhesive extends between the base and the conductive trace and the second adhesive extends between the post and the conductive trace. The conductive trace provides signal routing between a pad and a terminal.08-05-2010
20100193828LIGHT EMITTING DEVICE AND PACKAGE HAVING THE SAME - There is provided a light emitting device that can minimize reflection or absorption of emitted light, maximize luminous efficiency with the maximum light emitting area, enable uniform current spreading with a small area electrode, and enable mass production at low cost with high reliability and high quality. A light emitting device according to an aspect of the invention includes a light emitting lamination including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer, and a conductive substrate at one surface thereof. Here, the light emitting device includes a barrier unit separating the light emitting lamination into a plurality of light emitting regions, a first electrode structure, and a second electrode structure. The first electrode structure includes a bonding unit, contact holes, and a wiring unit connecting the bonding unit to the contact holes.08-05-2010
20100193827Pixel Structure and Method for Fabricating the Same - A pixel structure includes a first patterned metal layer, a gate insulating layer, a semiconductor channel layer, a second patterned metal layer, a passivation layer, and a conducting layer. A gate line of the second patterned metal layer is electrically connected by the conducting layer to a gate extension electrode of the first patterned metal layer. A source electrode of the second patterned metal layer is electrically connected by the conducting layer to a second data line segment of the first patterned metal layer. A method for fabricating a pixel structure is also disclosed herein.08-05-2010
20100193825LIGHT-EMITTING DIODE PACKAGE AND METHOD FOR FABRICATING THE SAME - A light-emitting diode (LED) package is disclosed. The LED package includes a metal substrate, a first insulating polymer layer disposed on the metal substrate, an upper metal layer disposed on surface of the first insulating polymer layer, and at least a LED chip. The first insulating polymer layer includes a cavity and first insulating polymer layer surrounding the cavity includes a reflecting slope, and the LED chip is disposed in the cavity of the first insulating polymer layer and electrically connected to the upper metal layer.08-05-2010
20100237382SEMICONDUCTOR LIGHT EMITTING ELEMENT, SEMICONDUCTOR LIGHT EMITTING DEVICE USING THE ELEMENT, AND METHOD FOR MANUFACTURING THE DEVICE - The present invention provides a semiconductor light emitting element capable of improving light extraction efficiency and a semiconductor light emitting device using the semiconductor light emitting element without adding any manufacturing step09-23-2010
20100123159SIDE-VIEW TYPE LIGHT EMITTING DEVICE AND LINE LIGHT SOURCE TYPE LIGHT EMITTING DEVICE - A side-view type light emitting device includes a package body, a lead frame, and a light emitting diode (LED). The package body has a first surface provided as a mount surface, a second surface disposed on a side opposite to the first surface, and lateral surfaces disposed between the first surface and the second surface. The package body includes a recessed portion disposed on a lateral surface corresponding to a light emitting surface of the lateral surfaces. The lead frame is disposed in the package body. The LED chip is mounted on a bottom surface of the recessed portion. Protrusion parts protruding toward the LED chip are disposed in regions adjacent to the LED chip of facing inner sidewalls of the recessed portion, respectively.05-20-2010
20100001309SEMICONDUCTOR CHIP ASSEMBLY WITH POST/BASE HEAT SPREADER AND HORIZONTAL SIGNAL ROUTING - A semiconductor chip assembly includes a semiconductor device, a heat spreader, a substrate and an adhesive. The semiconductor device is electrically connected to the substrate and thermally connected to the heat spreader. The heat spreader includes a post and a base. The post extends upwardly through an opening in the adhesive into an aperture in the substrate, and the base extends laterally from the post. The adhesive extends between the post and the substrate and between the base and the substrate. The substrate includes first and second conductive layers and a dielectric layer therebetween and provides horizontal signal routing between a pad and a terminal at the first conductive layer.01-07-2010
20100224905Semiconductor Light Source - A semiconductor light source for illuminating physical spaces includes a lead frame with multiple facets, each facet having one or more semiconductor light emitting devices mounted thereon.09-09-2010
20100213499LIGHT EMITTING DEVICE - To provide a light emitting device that is compact and has high efficiency of extracting light comprising a support body that incorporates a light emitting element.08-26-2010
20100276724LIGHT-EMITTING DEVICE - The application illustrates a light-emitting device including a contact layer and a current spreading layer on the contact layer. A part of the contact layer is a rough structure and a part of the contact layer is a flat structure. A part of the current spreading layer is a rough structure and a part of the current spreading layer is a flat structure. The rough region of the contact layer and the rough region of the current spreading layer are substantially overlapped.11-04-2010
20100276721Light Emitting Device Encapsulated with Silicones and Curable Silicone Compositions for Preparing the Silicones - A composition includes: (I) an alkenyl functional, phenyl-containing polyorganosiloxane, an Si—H functional phenyl-containing polyorganosiloxane, or a combination thereof; (II) a hydrogendiorganosiloxy terminated oligodiphenylsiloxane having specific molecular weight, an alkenyl-functional, diorganosiloxy-terminated oligodiphenylsiloxane having specific molecular weight, or a combination thereof; and (III) a hydrosilylation catalyst. A light emitting device is made by applying the composition onto a light source followed by curing. The composition provides a cured material with mechanical properties suited for use as an encapsulant for a light emitting device.11-04-2010
20100237383Photoelectric Transmitting or Receiving Device and Manufacturing Method Thereof - A photoelectric transmitting or receiving device and the manufacturing method thereof are provided. The photoelectric transmitting device comprises a substrate, a first conductive layer, a second conductive layer and a photoelectric transducing chip. The substrate has an upper surface and a recess and is made of a composite material. The recess is defined by a bottom surface and an inner lateral wall extended upwardly from the bottom surface to the upper surface. The first conductive layer and the second conductive layer are formed by using laser to activate the composite material of the substrate. The first conductive layer is disposed on the bottom surface of the recess, and is extended outwardly along the inner lateral wall of the recess and the upper surface of the substrate. The second conductive layer is electrically insulated from the first conductive layer and is extended outwardly along the upper surface of the substrate. The photoelectric transducing chip is disposed on the bottom surface of the recess and electrically connected to the first conductive layer disposed on the bottom surface of the recess and to the second conductive layer, respectively.09-23-2010
20100213497LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM INCLUDING THE SAME - Provided are a light emitting device package and a lighting system comprising the same. The light emitting device package comprises a package body having an inclined side surface and a light emitting device on the inclined side surface of the package body.08-26-2010
20100213500INFRARED SOURCE - A sealed infrared radiation source includes an emitter membrane stimulated by an electrical current conducted through the membrane, which acts like an electrical conductor, wherein the membrane is mounted between first and second housing parts, at least one being transparent in the IR range, each housing part defining a cavity between the membrane and the respective housing part of each side of the membrane. The housing parts are at least partially electrical conductive, and a first of the housing parts is electrically coupled to a first end of the electrical conductor and insulated from the second end of the electrical conductor, the second housing part being electrically coupled to a second end of the electrical conductor and being insulated from the first end of the electrical conductor, thus allowing a current applied from the first housing part to the second housing part to pass through and heat the membrane.08-26-2010
20100213501GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE - The present disclosure relates to a gallium nitride-based compound semiconductor light-emitting device with low driving voltage and high light emission output, which has a positive electrode comprising a transparent electrically conducting layer put into direct contact with a p-type semiconductor layer. An embodiment of the disclosure includes a gallium nitride-based compound semiconductor light-emitting device, which includes an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, which may be formed in this order on a substrate, wherein each layer comprises a gallium nitride-based compound semiconductor, the light-emitting device has a negative electrode and a positive electrode provided on the n-type semiconductor layer and a region having a semiconductor metal concentration of 20 at. % or more, based on all metals, is present in the transparent electrically conducting film on the semiconductor side surface of the transparent electrically conducting film.08-26-2010
20100252855SEMICONDUCTOR LIGHT-EMITTING DEVICE - In semiconductor light-emitting devices in which a light-emitting layer is formed on one surface of a substrate, and an n-side electrode and a p-side electrode are formed over the same surface of the substrate as the light-emitting layer, heat generated by a semiconductor light-emitting element needs to be dissipated to a submount. However, it is extremely complicated to fabricate connection members serving also as heat dissipating members and to control fabrication of the connection members, according to semiconductor light-emitting elements having electrodes of various sizes and shapes. By increasing the density of p-side bumps near the n-side electrode, the heat transfer area from the semiconductor light-emitting element to the submount is increased near the n-side electrode, whereby the heat dissipation effect is enhanced.10-07-2010
20100224903LIGHT EMITTING DEVICE PACKAGE AND METHOD OF MANUFACTURING THE SAME - A light emitting device package is provided. The light emitting device package comprises a substrate comprising a plurality of protrusions, an insulating layer on the substrate, a metal layer on the insulating layer, and a light emitting device on the substrate electrically connected to the metal layer.09-09-2010
20100224904LED PACKAGE HAVING AN ARRAY OF LIGHT EMITTING CELLS COUPLED IN SERIES - Disclosed is a light emitting diode (LED) package having an array of light emitting cells coupled in series. The LED package comprises a package body and an LED chip mounted on the package body. The LED chip has an array of light emitting cells coupled in series. Since the LED chip having the array of light emitting cells coupled in series is mounted on the LED package, it can be driven directly using an AC power source.09-09-2010
20100224902COMPLIANT BONDING STRUCTURES FOR SEMICONDUCTOR DEVICES - A compliant bonding structure is disposed between a semiconductor light emitting device and a mount. When the semiconductor light emitting device is attached to the mount, for example by providing pressure, heat, and/or ultrasonic energy to the semiconductor light emitting device, the compliant bonding structure collapses to partially fill a space between the semiconductor light emitting device and the mount. In some embodiments, the compliant bonding structure is plurality of metal bumps that undergo plastic deformation during bonding. In some embodiments, the compliant bonding structure is a porous metal layer.09-09-2010
20100237381Semiconductor light emitting element - A semiconductor light emitting element includes a semiconductor laminated body comprising a first conductivity type layer, a light emitting layer and a second conductivity type layer in this order from a lower side, a first electrode formed on the first conductivity type layer, and a second electrode comprising a transparent electrode formed on the second conductivity type layer and an auxiliary electrode formed on the transparent electrode, the transparent electrode comprising an oxide and having sheet resistance smaller than that of the second conductivity type layer and the auxiliary electrode comprising metal and having sheet resistance smaller than that of the transparent electrode, wherein the auxiliary electrode has, in a planar view, a linear surrounding portion surrounding the first electrode and a pad portion formed outside the surrounding portion for connecting a wire and the surrounding portion has a plurality of shortest-distance portions, in which a plan view distance from the first electrode is minimum, in a circumferential direction.09-23-2010
20100237379LIGHT EMITTING DEVICE - An embodiment of the invention provides a light emitting device, which includes: a first substrate made of a semiconductor material or a ceramic material; a first hole having extending direction from a first side toward an opposite second side and from a first surface toward an opposite second surface of the first substrate; a second hole having extending direction from the first side toward the second side and from the first surface toward the second surface; a light emitting element disposed overlying the first surface and having a first electrode and a second electrode; a first conducting layer overlying a first sidewall of the first hole and electrically connected to the first electrode; and a second conducting layer overlying a second sidewall of the second hole and electrically connected to the second electrode.09-23-2010
20100001308SIDE VIEW LIGHT EMITTING DIODE PACKAGE - Provided is a side view light emitting diode package including a housing that includes a front side part and a rear side part integrally formed with the front side part, the front side part having a light emission part; and a lead frame that is located between the front side part and the rear side part, wherein the lead frame includes a first lead connected to a first electrode of a Light Emitting Diode (LED) chip and a second lead connected to a second electrode of the LED chip, wherein the front side part includes a first groove, a second groove, and a third groove, wherein the first lead and the second lead are extended through the first groove and the second groove, respectively, and a heat dissipation part is extended from the first lead through the third groove to an outside of the LED package.01-07-2010
20100001306LIGHT EMITTING DIODE PACKAGE - The present invention provides a light emitting diode package which includes a lead frame with a cavity; a mold exposing the cavity and housing the lead frame; and an LED chip mounted on the cavity, wherein light passing an upper edge of the LED chip passes an upper edge of the cavity.01-07-2010
20100001305SEMICONDUCTOR DEVICES AND FABRICATION METHODS THEREOF - A semiconductor device and a fabrication method thereof are provides. The semiconductor device comprises a semiconductor substrate having a cavity and a light-emitting diode chip disposed in the cavity. The cavity is filled with an encapsulating resin to cover the light-emitting diode chip. Two isolated metal lines are disposed on the encapsulating resin and electrically connected to the light-emitting diode chip. At least two isolated inner wiring layers are disposed in the cavity and electrically connected to the isolated metal lines. At least two isolated outer wiring layers are disposed on a bottom surface of the semiconductor substrate and electrically connected to the isolated inner wiring layers.01-07-2010
20100237378LIGHT EMITTING DIODE PACKAGE STRUCTURE AND FABRICATION THEREOF - An ultraviolet light emitting diode package structure is disclosed, comprising a substrate with a through-silicon via (TSV) disposed therein, a first electrode disposed on a top side of the substrate, and a second electrode disposed on a bottom side of the substrate, wherein the first electrode and the second electrode are electrically connected through the TSV, an ultraviolet light emitting diode bonded to the top side of the substrate, and a cover substrate bonded to the substrate, wherein the cover substrate comprises a cavity for receiving the ultraviolet light emitting diode.09-23-2010
20100237380Method of manufacturing electronic device and display - A method of manufacturing an electronic device includes the steps of: forming a sacrifice layer made of at least one of an alkali metal oxide and an alkali earth metal oxide in a part of a first substrate; forming a supporting layer covering the sacrifice layer; forming an electronic device on the sacrifice layer with the supporting layer in between; exposing at least a part of a side face of the sacrifice layer by removing a part of the supporting layer; forming a support body between the electronic device and the supporting layer, and a surface of the first substrate; removing the sacrifice layer; breaking the support body and transferring the electronic device onto a second substrate by bringing the electronic device into close contact with an adhesion layer provided on a surface of the second substrate; removing a fragment of the support body belonging to the electronic device; removing at least an exposed region in the adhesion layer not covered with the electronic device; and forming a fixing layer on a surface of the electronic device and the surface of the second substrate.09-23-2010
20100252854Arrangement for Dissipating Thermal Energy Generated by a Light Emitting Diode - An arrangement for dissipating thermal energy generated by an LED includes an LED and a thermal energy dissipating medium. The LED includes an LED circuit, encapsulating material surrounding the LED circuit, and first and second electrical leads extending into the encapsulating material and electrically connected to the LED circuit. The thermal energy dissipating medium defines an opening therethrough sized to receive therein the LED such that the thermal energy dissipating medium defining the opening is in physical, thermally conductive contact with an exterior surface of at least one side portion of the encapsulating material of the LED. The thermal energy dissipating medium is not electrically connected to any of the LED circuit, the mounting surface, the first electrical lead and the second electrical lead. The thermal energy dissipating medium is formed of a material having a thermal conductivity of greater than or equal to 50 W/mK.10-07-2010
20100252856Header structure of opto-electronic element and opto-electronic element using the same - An opto-electronic element includes a header and an opto-electronic chip. The header have a metal stem and an insulating structure, and the opto-electronic chip located on the stem or insulating structure. The opto-electronic chip is grown with an epitaxy layer structure on a thicker and homogeneous electroconductive base, and the electrodes are located on the same side and have the same metal structure. Thus, the chip is located on the insulating structure and isolated from each electrode, and the chip and header are kept in an insulated state. Furthermore, an auxiliary pin for supporting the chip and for forming an open circuit or serving as an electrode of the chip is located in an axial direction of the insulating structure. The combination of the stem and insulating structure may be replaced with a non-metal stem with a corresponding shape, and a periphery of the non-metal stem may further have an extended wall portion combined with a cap to form the opto-electronic element.10-07-2010
20110101411SUPPORT MODULE FOR A SOLID STATE LIGHT SOURCE, A LIGHTING DEVICE COMPRISING SUCH A MODULE, AND A METHOD FOR MANUFACTURING SUCH A LIGHTING DEVICE - A support module (05-05-2011
20110006336ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD FOR MANUFACTURING THE SAME - An organic light emitting diode (OLED) display includes a display substrate including a display substrate including an organic light emitting element and a pixel defining layer having an opening defining a light emitting region of the organic light emitting element, an encapsulation substrate arranged opposite to the display substrate, a sealant arranged at an edge between the display substrate and the encapsulation substrate to seal a space between the display substrate and the encapsulation substrate from an outside and a filler filling the space between the display substrate and the encapsulation substrate, wherein the pixel defining layer has a thickness that varies by location, and a portion of the pixel defining layer closest to the sealant at edges of the display substrate having a thickness that is greater than a thickness of the pixel defining layer at all other portions of the display.01-13-2011
20100140655TRANSPARENT HEAT SPREADER FOR LEDS - A heat spreader for an LED can include a thermally conductive and optically transparent member. The bottom side of the heat spreader can be configured to attach to a light emitting side of the LED. The top and/or bottom surface of the heat spreader can have a phosphor layer formed thereon. The heat spreader can be configured to conduct heat from the LED to a package. The heat spreader can be configured to conduct heat from the phosphors to the package. By facilitating the removal of heat from the LED and phosphors, more current can be used to drive the LED. The use of more current facilitates the construction of a brighter LED, which can be used in applications such as flashlights, displays, and general illumination. By facilitating the removal of heat from the phosphors, desired colors can be better provided.06-10-2010
20120193674Semiconductor Light-Emitting Device - The present disclosure relates to a semiconductor light-emitting device which includes: a substrate having a first surface and a second surface; at least one semiconductor stacked body disposed on the first surface of the substrate and each including an active layer and first and second semiconductor layers disposed on both sides of the active layer, the first semiconductor layer having first conductivity, the second semiconductor layer having second conductivity different than the first conductivity, the first semiconductor layer having an exposed surface; a substrate piercing portion leading from the second surface to the first surface with a spacing from the exposed surface and opened without being covered with the at least one semiconductor stacked body; and an electrical path leading to the at least one semiconductor stacked body via the substrate piercing portion.08-02-2012
20100252852COOLING BLOCK ASSEMBLY AND LED INCLUDING THE COOLING BLOCK - An LED includes a cooling block, an LED chip, two insulating layers, two electrically conductive layers and two gold wires. According to the invention, two open trenches are arranged by opening on the cooling block; the LED chip is fixed on a surface of the cooling block; the insulating layers are plated on inner walls of the trenches; the electrically conductive layers are plated on the insulating layers and are insulated from the cooling block; the gold wires are electrically conducted to the electrically conductive layers and the LED chip; since the insulating layers are only plated on parts, where the cooling block contacts the electrically conductive layers, the other parts of the cooling block are exposed, such that the cooling area is increased and the cooling performance is promoted; in addition, the invention is further to provide a cooling block assembly constituted by these cooling blocks.10-07-2010
20100252853Thermal Energy Dissipating Arrangement for a Light Emitting Diode - A thermal energy dissipating and LED mounting arrangement includes an LED and a thermally conductive sheet. The thermally conductive sheet has a top surface, a bottom surface and thickness therebetween defining an opening therethrough sized to receive therein the LED such that the thickness of the thermally energy dissipating medium defining the opening is in physical, thermally conductive contact with an exterior surface of the at least one side portion of the encapsulating material of the LED. The thickness defining the opening absorbs thermal energy generated within the LED as a result of current flow through the LED circuit, and the thermal energy dissipating medium rejects the absorbed thermal energy to an ambient environment surrounding the thermal energy dissipating medium through a surface area of the thermal energy dissipating medium defined by the combination of the top surface, the bottom surface and an outer periphery thereof.10-07-2010
20100140656Semiconductor Light-Emitting Device - The present disclosure relates to a semiconductor light-emitting device generating light by recombination of electrons and holes. The semiconductor light-emitting device includes: a first bonding electrode and a second bonding electrode supplying the current for the recombination of the electrons and holes; a first branch electrode and a second branch electrode extended from the first bonding electrode; and a third branch electrode extended from the second bonding electrode, located between the first branch electrode and the second branch electrode, and having a first interval from the first branch electrode and a second interval smaller than the first interval from the second branch electrode. The second branch electrode is located farther from the center of the light-emitting device than the first branch electrode, and the second branch electrode is located farther from the center of the light-emitting device than the third branch electrode.06-10-2010
20130126931LIGHT EMITTING DIODE WITHOUT LEADS - An LED (light emitting diode) includes a seat and an LED chip. The seat includes a main body, and a first electrode and a second electrode formed on the main body. The LED chip includes a first semiconductor layer, an annular light-emitting layer encircling the first semiconductor layer, and an annular second semiconductor layer encircling the light-emitting layer. The first electrode electrically connects with the first semiconductor layer, and the second electrode electrically connects with the second semiconductor layer.05-23-2013
20130126932PACKAGE OF ENVIRONMENTAL SENSITIVE ELECTRONIC ELEMENT - A package of an environmental sensitive electronic element including a first substrate, a second substrate, an environmental sensitive electronic element, a flexible structure layer and a filler layer is provided. The environmental sensitive electronic element is disposed on the first substrate and located between the first substrate and the second substrate. The environmental sensitive electronic element includes an anode layer, a hole injecting layer, a hole transporting layer, an organic light emitting layer, a cathode layer and an electron injection layer. The flexible structure layer is disposed on the environmental sensitive electronic element and includes a soft layer, a trapping layer and a protective layer. The material of the trapping layer is the same as the material of the electron injection layer. The filler layer is disposed between the first substrate and the second substrate and encapsulates the environmental sensitive electronic element and the flexible structure layer.05-23-2013
20090020778LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - The light emitting device 01-22-2009
20130126934BONDING WIRE FOR SEMICONDUCTOR DEVICES - A bonding wire for semiconductor devices and a method of manufacturing the wire are provided. The bonding wire contains at least one element selected from zinc, tin, and nickel in an amount of 5 ppm to 10 wt %, the remainder containing silver and inevitable impurities. The method involves pouring a silver alloy according to the invention into a mold and melting the silver alloy, continuously casting the melted silver alloy, and drawing the continuously casted silver alloy.05-23-2013
20130126936Light-Emitting Element and Display Device - When a light-emitting element having an intermediate conductive layer between a plurality of light-emitting layers is formed, the intermediate conductive layer can have transparency; and thus, materials are largely limited and the manufacturing process of an element becomes complicated by a conventional method. A light-emitting element according to the present invention is formed by sequentially stacking a pixel electrode, a first light-emitting layer, an intermediate conductive layer (including an electron injecting layer and a hole-injecting layer, one of which is island-like), a second light-emitting layer and an opposite electrode. Therefore, the present invention can provide a light-emitting element typified by an organic EL element in which a range of choice of materials that can be used as the intermediate conductive layer is broadened extremely, and which can realize a high light-emitting efficiency, a low power consumption and a high reliability, and further a display device using the light-emitting element.05-23-2013
20110057228RESIN COMPOSITION FOR OPTICAL SEMICONDUCTOR ELEMENT HOUSING PACKAGE, AND OPTICAL SEMICONDUCTOR LIGHT-EMITTING DEVICE OBTAINED USING THE SAME - The present invention relates to a resin composition for forming an insulating resin layer for optical semiconductor element housing package having a concave portion in which a metal lead frame and an optical semiconductor element mounted thereon are housed, in which the resin composition includes the following ingredients (A) to (D), and the ingredients (C) and (D) are contained in a blend ratio (C)/(D) of 0.3 to 3.0 as a weight ratio thereof: (A) an epoxy resin; (B) an acid anhydride curing agent; (C) a white pigment; and (D) an inorganic filler.03-10-2011
20100127301SEMICONDUCTOR HIGH-POWER LIGHT-EMITTING MODULE WITH HEAT ISOLATION - The invention provides a semiconductor high-power light-emitting module including a heat-dissipating member, a heat-conducting device, and a diode light-emitting device. The heat-dissipating member includes an isolator member coupled to a first side of the heat-dissipating member. The heat-dissipating member has a second side opposite to the first side. The isolator member has a third side opposite to the first side. The environment temperature at the third side is higher than that at the second side. The heat-conducting device has a flat end and a contact portion tightly mounted on the heat-dissipating member. The diode light-emitting device is disposed on the flat end of the heat-conducting device. The semiconductor light-emitting module of the invention, applied to a headlamp of an automobile, has properties of saving electricity and long life, and furthermore the capability of integrating the heat-dissipating member into a shell of the automobile is both artistic and practical.05-27-2010
20100127300CERAMIC PACKAGE FOR HEADLAMP AND HEADLAMP MODUL HAVING THE SAME - Provided is a ceramic package for headlamp, and a headlamp module having the same. The ceramic package for headlamp includes a body part, a pair of internal electrodes, and an electrode exposing part. The body part has a cavity formed therein. The cavity is upwardly opened to expose a light emitting diode mounted on a mounting part. The pair of internal electrodes in the body part is electrically connected to the light emitting diode. The electrode exposing part is stepped at either side of the body part to upwardly expose the internal electrode to the outside.05-27-2010
20080230798ACTIVE MATRIX ORGANIC ELECTROLUMINESCENT SUBSTRATE AND METHOD OF MAKING THE SAME - An active matrix organic electroluminescent substrate includes a substrate having a controlling element region and a luminescent region, a thin film transistor, a first passivation layer, a conductive layer electrically connected to the thin film transistor, and a second passivation layer disposed on the first passivation layer and the conductive layer. The second passivation layer has an opening partially exposing the conductive layer, and a step-shaped structure located between the controlling element region and the luminescent region.09-25-2008
20080230797LED module and manufacturing method thereof - An LED module and a manufacturing method thereof are disclosed. The LED module includes a PCB and an LED chip connected with the PCB and a light congregating cup mounted on the PCB. Two ends of the light congregating cup define two hatches, the two hatches run-through each other and form a chip containing space within the light congregating cup. The LED chip is contained in the chip containing space and packaged therein by a packaging colloid. Because the light congregating cup is assembled with the PCB, the operating time of the production machine can be lowered. The defect rate, caused by traditional methods of setting the LED chip in a slantwise concave, can also be reduced. Moreover, the invention also provides a manufacturing method for the LED module.09-25-2008
20100123163SUBSTRATE WITH CHIPS MOUNTED THEREON, METHOD OF MANUFACTURING SUBSTRATE WITH CHIPS MOUNTED THEREON, DISPLAY, AND METHOD OF MANUFACTURING DISPLAY - Disclosed herein is a substrate with chip mounted thereon, including: a solder pattern having a plan-view shape in which projected parts are projected radially from a central part; and a chip fixed in the state of being aligned to the central part of the solder pattern.05-20-2010
20090278159SEMICONDUCTOR CHIP PACKAGE STRUCTURE WITHOUT SUBSTRATES FOR ACHIEVING FACE-UP ELECTRICAL CONNECTION WITHOUT USING A WIRE-BONDING PROCESS AND METHOD FOR MAKING THE SAME - A semiconductor chip package structure without substrates for achieving face-up electrical connection without using a wire-bonding process includes a package unit, a semiconductor chip, a first insulative unit, a first conductive unit, a second conductive unit, and a second insulative unit. The package unit has a central receiving groove for receiving the semiconductor chip. The semiconductor chip has a plurality of conductive pads. The first insulative unit has a first insulative layer formed between the conductive pads. The first conductive unit has a plurality of first conductive layers. The second conductive unit has a plurality of second conductive layers formed on the first conductive layers. The second insulative unit is formed between the first conductive layers and between the second conductive layers.11-12-2009
20100193829SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE USING THE SAME - There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.08-05-2010
20110233601SUBSTRATE FOR LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING DEVICE - To provide a substrate for light-emitting element, which is capable of sufficiently dissipating heat generation of a light-emitting element solely by a heat dissipation layer disposed in parallel with a light-emitting element-mounting surface of the substrate, which is economically advantageous as compared with thermal vias.09-29-2011
20090189176Light-emitting diode package - Disclosed is a light-emitting diode package. The light-emitting diode package includes an electrode pad on which a chip is placed; a housing having a window through which the chip is exposed; a housing wall defining the window; and an electrode lead extended from the electrode pad in a direction of the housing to be exposed outside a surface of the housing, wherein the housing wall formed in the direction comprises a first portion and a second portion thicker than the first portion to cover the electrode lead.07-30-2009
20090039382LIGHT EMITTING DIODE PACKAGE STRUCTURE - A light emitting diode (LED) package structure includes a substrate, an LED, a heat conducting layer, and a lead layer. The substrate is provided with a recess, in which the LED is disposed. The heat conducting layer is plated on outer surfaces of the substrate for transferring heat energy generated by the LED. The lead layer is formed on an outer side of the heat conducting layer and is electrically connected to the LED. In the embodiment, the heat conducting layer is made of a diamond material, which has high heat conductivity to enable quick transfer of heat energy generated by the LED to an external environment, so that the LED is protected against overheating and shortened service life.02-12-2009
20090039379HEAT RADIATION PACKAGE AND SEMICONDUCTOR DEVICE - A heat radiation package of the present invention includes a substrate in an upper surface side of which recess portion is provided, embedded wiring portion which is filled in the recess portion of the substrate and on which semiconductor element which generates a heat is mounted, and a heat sink connected to a lower surface side of the substrate. The substrate is made of silicon, ceramics, or insulating resin.02-12-2009
20090039380PACKAGE AND SEMICONDUCTOR DEVICE - A package has a base substrate that is a metal plate electrically connected to one electrode of a UV-ray light emitting diode and a cover substrate that is a metal plate electrically connected to the other electrode and that is stacked on the base substrate. A plurality of packages are mounted on a header such that center lines of the base substrates extending in their widthwise directions are aligned to each other. The cover substrates are arranged asymmetrical with respect to the longitudinal center line of the base substrates so as to traverse the center line. When mounted on the header, the packages are arranged such that positions of the cover substrates are staggered with respect to the center line. Moreover, the base substrate of one of the adjacent packages and the cover substrate of the other adjacent package are connected together by a connection plate fastened to the base substrates and the cover substrate by connection screws.02-12-2009
20090039376LIGHT SOURCE, MANUFACTURING METHOD OF LIGHT SOURCE, LIGHTING APPARATUS, AND DISPLAY APPARATUS - Provided is a light source that has high reliability and hardly causes conductivity failure between a light emitting device and a conductive land. In an LED light source of the present invention, an LED bare chip is mounted to conductive lands of a substrate, using bumps (02-12-2009
20090114940Light-Emitting Device - The invention provides a light-emitting device, comprising a light-emitting element and a surface plasmon coupling element connected to the light-emitting element. In an embodiment of the invention, the surface plasmon coupling element comprises a dielectric layer connected to the light-emitting element and a metal layer on the dielectric layer. In another embodiment of the invention, the light-emitting device is a light-emitting diode, comprising an active layer between an n-type semiconductor layer and a p-type semiconductor layer, and a surface plasmon coupling element adjacent to the n-type semiconductor layer. In a further embodiment of the invention, a current spreading layer on a second type semiconductor layer of the light-emitting device includes a plurality of strip-shaped structures, and the surface plasmon coupling element is disposed on the current spreading layer and filled into the gap between the strip-shaped structures of the current spreading layer.05-07-2009
20090072264Method of fabricating vertical Devices using a metal support film - A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal techniques. Trenches that define the boundaries of the individual devices are formed through the semiconductor layers and into the insulating substrate, beneficially by inductive coupled plasma reactive ion etching. A first support structure is attached to the semiconductor layers. The hard substrate is then removed, beneficially by laser lift off. A second supporting structure, preferably conductive, is substituted for the hard substrate and the first supporting structure is removed. Individual devices are then diced, beneficially by etching through the second supporting structure. A protective photo-resist layer can protect the semiconductor layers from the attachment of the first support structure. A conductive bottom contact (possibly reflective) can be inserted between the second supporting structure and the semiconductor layers.03-19-2009
20090108284Light emitting device - A light emitting device includes: a chip-mounting base; a light emitting chip mounted on the chip-mounting base; and a transparent encapsulant enclosing the light emitting chip and bonded to the chip-mounting base through a bonding material. The bonding material is an inorganic compound selected from one of a nitride compound and an oxide compound.04-30-2009
20100295087Light Emitting Diode with High Electrostatic Discharge and Fabrication Method Thereof - The present invention relates to a light emitting diode with high electrostatic discharge and a fabrication method thereof, and more specifically to a light emitting diode comprising a first electrode layer provided over a upper surface of a first semiconductor layer and a upper surface of a second semiconductor layer; a transparent electrode layer formed on the upper surface of the second semiconductor layer, spaced from the first electrode layer; and a second electrode layer provided on a upper surface of the transparent electrode layer. With the present invention, there is provided a light emitting diode element with resistance against electrostatic discharge and with high reliability being strong against electrical impact, by selecting a structure arranging a form of an electrode differently from a conventional electrode.11-25-2010
20100295090MOUNT FOR A SEMICONDUCTOR LIGHT EMITTING DEVICE - A mount for a semiconductor device includes a carrier, at least two metal leads disposed on a bottom surface of the carrier, and a cavity extending through a thickness of the carrier to expose a portion of the top surfaces of the metal leads. A semiconductor light emitting device is positioned in the cavity and is electrically and physically connected to the metal leads. The carrier may be, for example, silicon, and the leads may be multilayer structures, for example a thin gold layer connected to a thick copper layer.11-25-2010
20100295089LIGHT EMITTING DEVICE PACKAGE AND METHOD FOR FABRICATING THE SAME - Provided are a light emitting device package and a method for fabricating the same. The light emitting device package comprises a substrate; a light emitting device on the substrate; a zener diode comprising a first conductive type impurity region and two second conductive type impurity regions, the first conductive type impurity region being disposed in the substrate, the two second conductive type impurity regions being separately disposed in two areas of the first conductive type impurity region; and a first electrode layer and a second electrode layer, each of them being electrically connected to the second conductive type impurity regions and the light emitting device.11-25-2010
20100295088TEXTURED-SURFACE LIGHT EMITTING DIODE AND METHOD OF MANUFACTURE - A high efficiency textured-surface light emitting diode comprises a flip-chipped stack of Al11-25-2010
20110114986SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor light-emitting device includes: a first semiconductor layer having a first major surface and a second major surface which is an opposite side to the first major surface; a second semiconductor layer provided on the second major surface of the first semiconductor layer and including a light-emitting layer; a first electrode provided on the second major surface of the first semiconductor layer; a second electrode provided on a surface of the second semiconductor layer, the surface being an opposite side to the first semiconductor layer; an insulating film provided on a side surface of the second semiconductor layer, and an edge of an interface between the first semiconductor layer and the second semiconductor layer; and a metal film provided on the insulating film from the second electrode side toward the edge of the interface.05-19-2011
20110248310CHIP PACKAGE AND METHOD FOR FORMING THE SAME - An embodiment of the invention provides a chip package which includes a substrate having an upper surface and a lower surface and having at least a side surface, and at least a trench extending from the upper surface towards the lower surface and extending from the side surface towards an inner portion of the substrate, wherein a width of the trench near the upper surface is not equal to a width of the trench near the lower surface, and at least an insulating layer located on a sidewall of the trench, and at least a conducting pattern located on the insulating layer, wherein the side surface is separated from the conducting pattern in the trench by a predetermined distance such that a portion of the insulating layer is exposed, and at least a conducting region electrically connected to the conducting pattern.10-13-2011
20100308366NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING ELECTRODES OF A MULTILAYER STRUCTURE - A nitride semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a p-electrode formed on the p-type nitride semiconductor layer; and an n-electrode formed on the n-type nitride semiconductor layer in which the active layer is not formed. The p-electrode and n-electrode are formed to have such a multilayer structure that an ohmic contact layer, a compound layer containing aluminum or silver, and a degradation preventing layer are sequentially laminated.12-09-2010
20100308367METHOD OF FORMING A DIELECTRIC LAYER ON A SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region is formed. A first metal contact is formed on a portion of the n-type region and a second metal contact is formed on a portion of the p-type region. The first and second metal contacts are formed on a same side of the semiconductor structure. A dielectric material is disposed between the first and second metal contacts. The dielectric material is in direct contact with a portion of the semiconductor structure, a portion of the first metal contact, and a portion of the second metal contact. A planar surface is formed including a surface of the first metal contact, a surface of the second metal contact, and a surface of the dielectric material12-09-2010
20100301375FORMULATION FOR IMPROVED ELECTRODES FOR ELECTRONIC DEVICES - A conductive electrode paste or ink formulation including a getter removes or reduces the concentration of the unwanted impurities in an electronic device. These reductions may happen during or immediately after the fabrication or sealing of the device, or they may occur after some activation time or event. Water, oxygen, carbon dioxide, hydrogen, and residual solvents are gettered.12-02-2010
20100308368METHOD OF FABRICATING VERTICAL STRUCTURE LEDS - A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques. Trenches that define the boundaries of the individual devices are then formed through the semiconductor layers and into the insulating substrate, beneficially by using inductive coupled plasma reactive ion etching. The trenches are then filled with an easily removed layer. A metal support structure is then formed on the semiconductor layers (such as by plating or by deposition) and the insulating substrate is removed. Electrical contacts, a passivation layer, and metallic pads are then added to the individual devices, and the individual devices are then diced out.12-09-2010
20110127569LED MODULE - An LED module A06-02-2011
20110127567SUPPORTING SUBSTRATE FOR PREPARING SEMICONDUCTOR LIGHT-EMITTING DEVICE AND SEMICONDUCTOR LIGHT-EMITTING DEVICE USING SUPPORTING SUBSTRATES - The present invention is related to a supporting substrate for preparing a semiconductor light-emitting device employing a multi-layered light-emitting structure thin-film and a method for preparing a semiconductor light-emitting device employing the supporting substrate for preparing a semiconductor light-emitting device. The supporting substrate for preparing a semiconductor light-emitting device is formed by successively laminating a sacrificial layer, a heat-sink layer and a bonding layer on a selected supporting substrate. A method for preparing a semiconductor light-emitting device employing the supporting substrate for preparing a semiconductor light-emitting device includes: preparing a first wafer in which a semiconductor multi-layered light-emitting structure is laminated/grown on an upper part of an initial substrate; preparing a second wafer which is a supporting substrate for preparing a semiconductor light-emitting device; bonding the second wafer on an upper part of the first wafer; separating the initial substrate of the first wafer from a result of the bonding; performing passivation after forming a first ohmic contact electrode on an upper part of the first wafer from which the initial substrate is separated; and preparing a single-chip by severing a result of the passivation.06-02-2011
20110127562Electronic Substrate Having Low Current Leakage and High Thermal Conductivity and Associated Methods - Electrical substrates having low current leakage and high thermal conductivity, including associated methods, are provided. In one aspect for example, a multilayer substrate having improved thermal conductivity and dielectric properties can include a metal layer having a working surface with a local Ra of greater than about 0.1 micron, a dielectric layer coated on the working surface of the metal layer, and a thermally conductive insulating layer disposed on the dielectric layer, wherein the multilayer substrate has a minimum resistivity between the metal layer and the thermally conductive insulating layer across all of the working surface of at least 1×1006-02-2011
20110127565LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE - Disclosed is a light emitting device including a second conductive semiconductor layer; an active layer on the second conductive semiconductor layer; a first semiconductor layer on the active layer, the first semiconductor layer having at least one lateral side with a step portion; and a lateral electrode on the step portion formed at the at least one lateral side of the first semiconductor layer.06-02-2011
20110108876PAD STRUCTURE AND MANUFACTURING METHOD THEREOF - A pad structure includes a copper circuit pattern on a substrate, at least a gold layer stacked on the copper circuit pattern, and a nano-structured coating film stacked on the gold layer.05-12-2011
20120132948SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor light emitting device includes a light emitter, a first and a second electrode layer, a pad electrode and an auxiliary electrode portion. The emitter includes a first semiconductor layer provided on one side of the emitter, a second semiconductor layer provided on one other side of the emitter, and a light emitting layer provided between the first and second semiconductor layers. The first electrode layer is provided on opposite side of the second semiconductor layer from the first semiconductor layer and includes a metal layer and a plurality of apertures penetrating through the metal layer. The second electrode layer is electrically continuous with the first semiconductor layer. The pad electrode is electrically continuous with the first electrode layer. The auxiliary electrode portion is electrically continuous with the first electrode layer and extends in a second direction orthogonal to the first direction.05-31-2012
20100133579III-Nitride Semiconductor Light Emitting Device - The present disclosure relates to a III-nitride semiconductor light-emitting device including: a plurality of III-nitride semiconductor layers having a first III-nitride semiconductor layer having a first conductivity type, a second III-nitride semiconductor layer having a second conductivity type different from the first conductivity type, and an active layer disposed between the first III-nitride semiconductor layer and the second III-nitride semiconductor layer and generating light by recombination of electrons and holes; a bonding pad electrically connected to the plurality of III-nitride semiconductor layers; a protection film disposed over the bonding pad; and a buffer pad disposed between the bonding pad and the protection film and formed to expose the bonding pad.06-03-2010
20100133577Method for producing electronic component and electronic component - A plurality of chips disposed in a wafer on a passivated main side, having at least one chip contact surface, is provided with an insulation layer. The insulation layer has openings in the area of the at least one chip contact surface of each chip. The chip contact surfaces of each chip are provided with a chip contact surface metallization of a prescribed thickness, and the chips disposed in the water are separated therefrom.06-03-2010
20110241064LIGHT EMITTING DIODE - A LED chip including a substrate, a semiconductor device layer, a current blocking layer, a current spread layer, a first electrode and a second electrode is provided. The semiconductor device layer is disposed on the substrate. The current blocking layer is disposed on a part of the semiconductor device layer and includes a current blocking segment and a current distribution adjusting segment. The current spread layer is disposed on a part of the semiconductor device layer and covers the current blocking layer. The first electrode is disposed on the current spread layer, wherein a part of the current blocking segment is overlapped with the first electrode. Contours of the current blocking segment and the first electrode are similar figures. Contour of the first electrode and is within contour of the current blocking segment. The current distribution adjusting segment is not overlapped with the first electrode.10-06-2011
20110241058LED HEAT DISSIPATING MODULE - A light emitting diode (LED) heat dissipating module includes an aluminum base plate, at least one connecting hole formed on aluminum base plate, and a copper pillar installed in the connecting hole, such that the bottom of the aluminum heat dissipating base plate of the LED is coupled to a distal surface of the copper pillar, and the heat produced by the aluminum heat dissipating base plate can be conducted to the aluminum base plate by a copper body to achieve a quick heat dissipating effect.10-06-2011
20110108879LIGHT-EMITTING DEVICE - A light-emitting device comprising a semiconductor light-emitting stack, comprising a light emitting area; an electrode formed on the semiconductor light-emitting stack, wherein the electrode comprises a current injected portion and an extension portion; a current blocking structure formed between the current injected portion and the semiconductor light-emitting stack, and formed between a first part of the extension portion and the semiconductor light-emitting stack; and an electrical contact structure formed between a second part of the extension portion and the semiconductor light-emitting stack.05-12-2011
20110108877LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME - A light emitting element includes a first electrode, an organic layer formed on the first electrode, a resistance layer formed on the organic layer, a second electrode, and a conductive resin layer formed between the resistance layer and the second electrode.05-12-2011
20110024787LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A high-quality light emitting device is provided which has a long-lasting light emitting element free from the problems of conventional ones because of a structure that allows less degradation, and a method of manufacturing the light emitting device is provided. After a bank is formed, an exposed anode surface is wiped using a PVA (polyvinyl alcohol)-based porous substance or the like to level the surface and remove dusts from the surface. An insulating film is formed between an interlayer insulating film on a TFT and the anode. Alternatively, plasma treatment is performed on the surface of the interlayer insulating film on the TFT for surface modification.02-03-2011
20110024789LIGHT-EMITTING DEVICE HAVING A ROUGHENED SURFACE WITH DIFFERENT TOPOGRAPHIES - This invention provides an optoelectronic semiconductor device having a rough surface and the manufacturing method thereof. The optoelectronic semiconductor device comprises a semiconductor stack having a rough surface and an electrode layer overlaying the semiconductor stack. The rough surface comprises a first region having a first topography and a second region having a second topography. The method comprises the steps of forming a semiconductor stack on a substrate, forming an electrode layer on the semiconductor stack, thermal treating the semiconductor stack, and wet etching the surface of the semiconductor stack to form a rough surface.02-03-2011
20090065798PACKAGING TECHNIQUE FOR THE FABRICATION OF POLARIZED LIGHT EMITTING DIODES - A polarized light emitting diode (LED) includes a marker indicating a polarization direction. A package for the LED also includes a marker indicating the polarization direction. The markers on the LED and package are used for mutual alignment, wherein the LED is attached in a favorable orientation with respect to a package, so that the polarization direction of emitted light from the package is apparent. The marker is placed on the LED before die separation and the marker is placed on the package before alignment. The marker on the LED comprises a photolithographic pattern, an asymmetric die shape, a notch on the die, or a scratch on the die, while the marker on the package comprises an electrode shape or pattern, an asymmetric package shape, a notch on the package, or a scratch on the package. Finally, the LED or package may be installed in an external circuit or system that also indicates the polarization direction.03-12-2009
20090065797Light emitting unit and liquid crystal display device using the same - A light emitting unit capable of widely adjusting brightness or size, and a liquid crystal display device using the same are disclosed. The light emitting unit includes a circuit board including circuit lines having a plurality of connecting members, and a plurality of unit module connected to the connecting members of the circuit board. The unit module is coupled with at least one light emitting device.03-12-2009
20090065796SURFACE MOUNT LIGHT EMITTING APPARATUS - A surface mount LED apparatus is provided which can prevent separation of the surface of an LED chip from a sealing resin portion. Patterned circuits on a substrate are provided with a device mounting region and a wire bond region, and an increased-thickness portion having a thickness 1.6 times or more than the greater of the thickness of the device mounting region and the thickness of the wire bond region. When the apparatus is heated, this configuration allows for inducing interfacial separation between the increased-thickness portion and the sealing resin portion earlier than interfacial separation is induced between the LED chip and the sealing resin portion. This configuration can prevent interfacial separation between the LED chip and the sealing resin portion.03-12-2009
20120032224ELECTRICAL CONNECTION STRUCTURE AND LIGHT EMITTING DIODE MODULE, FABRIC CIRCUITS, AND SIGNAL TEXTILE HAVING THE SAME - An electrical connection structure for use in an electronic component, a light emitting diode (LED) module, a fabric circuit and a signal textile with the same are provided. The electrical connection structure comprises a plurality of J-type leads which electrically connect to the electronic component and encircle two conductive lines. Thus, the electronic component can be firmly attached and electrically connected to the two conductive lines.02-09-2012
20120032226Light Emitting Diode Submount with High Thermal Conductivity for High Power Operation - This invention relates to the thermal management, extraction of light, and cost effectiveness of Light Emitting Diode, or LED, electrical circuits. An integrated circuit LED submount is described, for the packaging of high power LEDs. The LED submount provides high thermal conductivity while preserving electrical insulation. In particular, a process is described for anodizing a high thermal conductivity aluminum alloy sheet to form a porous aluminum oxide layer and a non-porous aluminum oxide layer. This anodized aluminum alloy sheet acts as a superior electrical insulator, and also provides surface morphology and mechanical properties that are useful for the fabrication of high-density and high-power multilevel electrical circuits.02-09-2012
20110031526LIGHT EMITTING DIODE PACKAGE AND FABRICATION METHOD THEREOF - An LED package and a fabrication method therefor. The LED package includes first and second lead frames made of heat and electric conductors, each of the lead frames comprising a planar base and extensions extending in opposed directions and upward directions from the base. The package also includes a package body made of a resin and configured to surround the extensions of the first and second lead frames to fix the first and second lead frames while exposing underside surfaces of the first and second lead frames. The LED package further includes a light emitting diode chip disposed on an upper surface of the base of the first lead frame and electrically connected to the bases of the first and second lead frames, and a transparent encapsulant for encapsulating the light emitting diode chip.02-10-2011
20110031525LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING LIGHT EMITTING DEVICE - A light emitting device includes a light emitting diode chip, and a first lead terminal in which a bottom portion including a mounting region for the light emitting diode chip is formed, and a side wall continuing to the bottom portion and having an inner surface serving as a reflecting surface for light emitted from the light emitting diode chip is continuously formed. Further, the light emitting device includes a second lead terminal provided to be spaced from the first lead terminal. Furthermore, the light emitting device includes a resin portion which supports the first lead terminal and the second lead terminal, and in which a cavity exposing a portion of the second lead terminal and the mounting region in the first lead terminal is formed.02-10-2011
20090230424SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A light emitting device includes a semiconductor light emitting element, a first lead including an element mount portion on which the semiconductor light emitting element is mounted, and a second lead electrically connected to the semiconductor light emitting element. The light emitting device further includes a resin package covering the semiconductor light emitting element and part of each of the first and the second leads. The resin package includes a lens portion facing the semiconductor light emitting element. The first lead includes a pair of standing portions spaced from each other with the element mount portion intervening between them and a pair of terminal portions extending from the standing portions in mutually opposite directions. Each of the standing portions projects from the resin package in a direction away from the lens portion.09-17-2009
20100155769SEMICONDUCTOR CHIP ASSEMBLY WITH BASE HEAT SPREADER AND CAVITY IN BASE - A semiconductor chip assembly includes a semiconductor device, a heat spreader, a conductive trace and an adhesive. The heat spreader includes a base. A cavity extends through the adhesive into the base. The semiconductor device extends into the cavity, is electrically connected to the conductive trace and is thermally connected to the heat spreader. The adhesive extends between the cavity and the conductive trace and between the base and the conductive trace. The conductive trace is located outside the cavity and provides signal routing between a pad and a terminal.06-24-2010
20110108878ANISOTROPIC CONDUCTIVE ADHESIVE - An anisotropic conductive adhesive includes an epoxy adhesive containing an epoxy compound and a curing agent and conducive particles dispersed in the epoxy adhesive. When elastic moduluses at 35° C., 55° C., 95° C., and 150° C. of a cured product of the anisotropic conductive adhesive are denoted by EM05-12-2011
20100155767Light emitting device using a micro-rod and method of manufacturing a light emitting device - A light emitting device using a micro-rod and a method of manufacturing a light emitting device are provided, the method includes forming a material layer on a substrate. The material layer is patterned such that a hole is formed that exposes a surface of the substrate. A core is grown in the shape of a micro-rod on the surface of the substrate exposed through the hole. A light emitting layer is deposited on the core. A shell is grown on the light emitting layer.06-24-2010
20110114990LIGHT EMITTING DIODE HAVING ELECTRODE EXTENSIONS FOR CURRENT SPREADING - An exemplary embodiment of the present invention discloses a light emitting diode including a substrate having a first edge and a second edge opposite to each other, a light emitting structure disposed on the substrate, the light emitting structure including a first semiconductor layer and a second semiconductor layer, a plurality of first electrode pads arranged on an upper surface of the first semiconductor layer, the first electrode pads arranged in a vicinity of the first edge, a plurality of second electrode pads arranged on the second semiconductor layer, the second electrode pads arranged in a vicinity of the second edge, a plurality of first extensions, each first extension extending from a first electrode pad, and a plurality of second extensions, each second extension extending from a second electrode pad. The first extensions include intrusion parts extending in a direction from the first edge to the second edge, wherein the intrusion parts are spaced apart from each other and not connecting with the second electrode pads. Further, the second extensions include intrusion parts extending in a direction from the second edge to the first edge, wherein the first extension intrusion parts each extend into a region between two of the second extension intrusion parts.05-19-2011
20110114989Light-emitting device, method of manufacturing the same, method of mounting the same and lighting device - A method of manufacturing a light-emitting device includes a hole forming process for forming a through-hole that continues from a front surface to a back surface of a mounting substrate, a pattern forming process for continuously forming a circuit pattern on an inner surface of the through-hole in the mounting substrate, from an end portion of the through-hole on the front surface of the mounting substrate to a mounting portion of a light-emitting element, and on a periphery of the through-hole on the back surface of the mounting substrate, a mounting process for mounting the light-emitting element on the mounting portion, and a hot pressing process in that an inorganic material softened by heating is placed on the surface of the mounting substrate and is advanced into the through-hole while sealing the light-emitting element by pressing and bonding the inorganic material to the surface of the mounting substrate.05-19-2011
20110114987COMPLIANT BONDING STRUCTURES FOR SEMICONDUCTOR DEVICES - A light emitting device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region, a metal p-contact disposed on the p-type region, and a metal n-contact disposed on the n-type region. The metal p-contact and the metal n-contact are both formed on the same side of the semiconductor structure. The light emitting device is connected to a mount by a bonding structure. The bonding structure includes a plurality of metal regions separated by gaps and a metal structure disposed between the light emitting device and the mount proximate to an edge of the light emitting device. The metal structure is configured such that during bonding, the metal structure forms a continuous seal between the light emitting device and the mount.05-19-2011
20110018025LIGHT EMITTING DIODE DEVICE - The invention relates to a light emitting diode device comprising a light emitting diode arrangement comprising a flexible substrate (01-27-2011
20110241065SEMICONDUCTOR LIGHT EMITTING DEVICE - Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure including a plurality of compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; an electrode layer on the plurality of compound semiconductor layers; and a channel layer including protrusion and formed along a peripheral portion of an upper surface of the plurality of compound semiconductor layers.10-06-2011
20130153949LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A manufacturing method of a light emitting device is provided. A first electrode is formed on a substrate. The first electrode includes a patterned conductive layer, and the patterned conductive layer includes an alloy containing a first metal and a second metal. An annealing process is performed on the first electrode, so as to form a passivation layer at least on a side surface of the first electrode. The passivation layer includes a compound of the second metal. A light emitting layer is formed on the first electrode. A second electrode is formed on the light emitting layer.06-20-2013
20110114988Led Chip - A light-emitting diode chip (05-19-2011
20110210370Light emitting device - On a through-electrode (09-01-2011
20100163919Lighting device - Provided is a lighting device which includes a lead frame embedded in a glass material and has high reliability. The lighting device has a structure in which a light emitting element is mounted in a recess portion formed on a surface of a glass substrate and a sealing material is provided to cover the light emitting element. The lead frame is embedded in the glass substrate so as to be exposed on a side surface of the glass substrate and a bottom surface of the recess portion. A portion of the lead frame which is exposed in the recess portion is electrically connected with the light emitting element. With the structure as described above, the durability of the lighting device is improved.07-01-2010
20100163921SEMICONDUCTOR CHIP ASSEMBLY WITH ALUMINUM POST/BASE HEAT SPREADER AND SILVER/COPPER CONDUCTIVE TRACE - A semiconductor chip assembly includes a semiconductor device, a heat spreader, a conductive trace and an adhesive. The semiconductor device is electrically connected to the conductive trace and thermally connected to the heat spreader. The heat spreader is aluminum and includes a post and a base. The post extends upwardly from the base into an opening in the adhesive, and the base extends laterally from the post. The adhesive extends between the post and the conductive trace and between the base and the conductive trace. The conductive trace includes a silver coating and a copper core and provides signal routing between a pad and a terminal.07-01-2010
20100163917LIGHT-EMITTING DIODE LIGHT BAR AND METHOD FOR MANUFACTURING THE SAME - In a light-emitting diode light bar of a light-emitting device, a first lead and a second lead are juxtaposed with a distance. A light-emitting diode crystal has a first electrode and a second electrode. Then, the first electrode is electrically fixed to the first lead. The second electrode is electrically connected to the second lead via a metallic lead. A light-transmitting body is used to package the light-emitting diode crystal and the metallic lead. Finally, via a hot pressing process, an insulating layer covers the first lead and the second lead. In this way, a light-emitting diode light bar is formed.07-01-2010
20100163920SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device (A) includes a resin package (07-01-2010
20110241066SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE USING THE SAME - There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.10-06-2011
20110241063MULTILAYER DEVICES ON FLEXIBLE SUPPORTS - A flexible element has a flexible support comprising two or more layers with different modulus of elasticities in bound contact with each other, and at least one thin film wherein the total thickness of the thin film(s) is less than the total thickness of the flexible support at any point of contact between the support and the thin film(s); and at least one thin film is deposited on the outer surface of the layer of the flexible support having the higher elastic modulus.10-06-2011
20110241062LED lamps - A high power LED lamp has a GaN chip placed over an AlGaInP chip. A reflector is placed between the two chips. Each of the chips has trenches diverting light for output. The chip pair can be arranged to produce white light having a spectral distribution in the red to blue region that is close to that of daylight. Also, the chip pair can be used to provide an RGB lamp or a red-amber-green traffic lamp. The active regions of both chips can be less than 50 microns away from a heat sink.10-06-2011
20110241061HEAT DISSIPATION BY THROUGH SILICON PLUGS - The package substrates with through silicon plugs (or vias) described above provide lateral and vertical heat dissipation pathways for semiconductor chips that require thermal management. Designs of through silicon plugs (TSPs) with high duty ratios can most effectively provide heat dissipation. TSP designs with patterns of double-sided combs can provide high duty ratios, such as equal to or greater than 50%. Package substrates with high duty ratios are useful for semiconductor chips that generate large amount of heat. An example of such semiconductor chip is a light-emitting diode (LED) chip.10-06-2011
20110241060Glass sealing package and manufacturing method thereof - Disclosed herein are a glass sealing package and a manufacturing method thereof. The glass sealing package includes a first glass substrate, a second glass substrate and a frit. The coefficient of thermal expansion of the frit lies between that of the two glass substrates. A light emitting element on the first glass substrate is situated in a sealed room formed among the two substrates and the frit. The method includes the steps of proving a first and a second glass substrate, dispensing a frit on the second glass substrate, pre-sintering the frit, assembling the two substrates, and sealing the frit to join the two substrates.10-06-2011
20110241059LED DIE STRUCTURE AND METHOD FOR MANUFACTURING THE BOTTOM TERMINAL THEREOF - An LED die structure and a method for manufacturing the bottom terminal of the LED die structure, wherein the LED die includes a substrate, a light-emitting layer positioned at the top of the substrate, at least one bottom terminal positioned at the bottom of the substrate, at least one top terminal positioned at the top of the light-emitting layer, and at least one side terminal positioned at the side of the bottom of the substrate, and wherein the method comprises the following steps: a) recessing the bottom side of the wafer to a predetermined height when the LED is formed in a wafer type; b) coating the metal material to the bottom of the wafer and to the inside of the recesses; and c) dividing the wafer along the recesses into dies. In this way, the bottom terminal and the side terminal are formed at the bottom of the substrate of the die. Moreover, the LED die structure enhances the quality of the electric connection between the die-bonding paste and the LED die.10-06-2011
20110062486 FABRICATION FOR ELECTROPLATING THICK METAL PADS - A method of electroplating includes forming a seed region to be electroplated on a first portion of a substrate, forming a ground plane on a second portion of a substrate, electrically isolating the ground plane from the seed region, electroplating the region, wherein electroplating includes causing the ground plane and the region to make electrical connection, and then removing the ground plane region on the second portion of the substrate, but not removing the electrical isolation. This creates a structure having a substrate, a passivation layer on the substrate, and at least one electroplated, metal region on the substrate such that there is contiguous contact between the metal region and the passivation layer. And, after an additional flip-chip assembly to a bond pad/heat sinking chip, results in a device having a bond pad chip having bond pads, solder beads formed on the bond pads, and a component connected to the bond pads by the solder beads. Wherein, the component has a substrate, a passivation layer on the substrate, and at least one electroplated, metal region on the substrate such that there is contiguous contact between the metal region and the passivation layer.03-17-2011
20110084304LIGHT EMITTING DEVICE AND METHOD OF FORMING THE SAME - An embodiment of present invention discloses a light-emitting device comprising a first multi-layer structure comprising a first lower layer; a first upper layer; and a first active layer able to emit light under a bias voltage and positioned between the first lower layer and the first upper layer; a second thick layer neighboring the first multi-layer structure; a second connection layer associated with the second thick layer; a connective line electrically connected to the second connection layer and the first multi-layer structure; a substrate; and two or more ohmic contact electrodes between the first multi-layer structure and the substrate.04-14-2011
20100012966ORGANIC LIGHT EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - An organic light emitting display apparatus and a method of manufacturing the organic light emitting display apparatus are disclosed. In one embodiment, the organic light emitting display apparatus includes: i) a substrate, ii) a display unit formed on the substrate, iii) an encapsulation substrate formed over the display unit, iv) a sealant bonding the substrate and the encapsulation substrate and v) a filler formed in the space defined by i) the substrate, ii) the sealant and iii) the encapsulation substrate, wherein the filler comprises a first region and a second region which have different levels of hardness.01-21-2010
20100012965Semiconductor light emitting device and semiconductor light emitting device mounted board - In a semiconductor light emitting device having a matrix of a plurality of bumps composed of one n-bump formed on an n-electrode layer and of a large number of p-bumps formed on p-electrode layers, occurrence of faulty junction in the n-bump fewer than the p-bumps after mounting can be suppressed by placement of the n-bump at center of the bump array that is most resistant to occurrence of stress after the mounting. Employment of such a configuration of bump array increases reliability of mounting thereof while improving uniformity of light emission intensity in the semiconductor light emitting device having an increased size.01-21-2010
20100187558SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME - Provided are a semiconductor light emitting device and a method of fabricating the same. The semiconductor light emitting device comprises: a light emitting structure comprising a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer; a nitride semiconductor layer on an outer periphery of the second conductive semiconductor layer; and an ohmic layer on the second conductive semiconductor layer.07-29-2010
20090242922LIGHT-EMITTING DIODE LAMP - A light-emitting diode (LED) lamp includes a columnar body having a plurality of heat-radiating fins, an LED supporting end, and a mounting end; a first conducting plate disposed on the LED supporting end; an LED having a first electrode in electric contact with the first conducting plate; a second conducting plate in electric contact with a second electrode of the LED; a cap having a rear coupling end covered around the LED supporting end of the columnar body and a front end defining a central opening to enclose a light-emitting section of the LED therein; a first annular gasket disposed between the rear coupling end of the cap and the LED supporting end of the columnar body; and a second annular gasket disposed between the light-emitting section and the central opening of the cap. Therefore, the LED lamp is waterproof and easy to maintain, and allows good heat radiation.10-01-2009
20090321774OPTICAL SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An optical semiconductor device can have a first lead for an optical semiconductor chip to be mounted on and a second lead for joining to a wire extending from the optical semiconductor chip. The device can be configured to be capable of reducing the possibility of a break of the wire even under a thermal shock and the like. The optical semiconductor device can include a first lead for an optical semiconductor chip to be mounted on, a second lead for joining to a wire (for example, gold wire) extending from the optical semiconductor chip mounted on the first lead; a holder part for supporting the first lead and the second lead at two locations each; a lens part; and a light-transmitting sealing part. The second lead can be separated into two lead pieces with a predetermined gap (≠0) therebetween as seen in a plan view, or with certain bend configurations as shown in side views, within the inside space of the holder part by which the second lead is supported at two locations.12-31-2009
20090218588CHIP-SCALE PACKAGED LIGHT-EMITTING DEVICES - Light-emitting devices, and related components, systems, and methods associated therewith are provided. A light-emitting device can comprise a light-emitting die comprising a light-generating region capable of generating light and an emission surface through which generated light is capable of being emitted, and a package layer at least partially disposed over at least a portion of the light-emitting die emission surface, wherein the package layer has an aperture through which light from the light-emitting die is capable of being emitted. The light-emitting device can be a chip-scale packaged device where the device area can be less than 3 times the light-emitting die emission surface area and/or the device thickness can be less than 2 times the light-emitting die thickness.09-03-2009
20090218590METHOD OF PRODUCING THIN SEMICONDUCTOR STRUCTURES - A method of making a thin gallium-nitride (GaN)-based semiconductor structure is provided. According to one embodiment of the invention, the method includes the steps of providing a substrate; sequentially forming one or more semiconductor layers on the substrate; etching a pattern in the one or more semiconductor layers; depositing a dielectrics layer; forming a photoresist on a portion of the dielectrics layer, wherein the portion of the dielectrics layer is deposited on the one or more semiconductor layers; depositing a primer; removing the photoresist layer, wherein the primer on the photoresist is also removed; depositing a superhard material, wherein the superhard material forms in the pattern; and removing the substrate. Accordingly, the superhard material may be selectively deposited in only areas where the superhard material is desired. Vertical GaN-based light emitting devices may then be formed by cutting the semiconductor structure.09-03-2009
20090218587Radiation-Emitting Semiconductor Body with Carrier Substrate and Method for the Production thereof - A radiation-emitting semiconductor body with a carrier substrate and a method for producing the same. In the method, a structured connection is produced between a semiconductor layer sequence (09-03-2009
20090218589Semiconductor die with reduced thermal boundary resistance - Thermal boundary resistances within nitride semiconductor LEDs are reduced or eliminated by forming a thick nitride epitaxial layer, which can be separated from a growth substrate, and by reducing the number of thermal boundary layers during laser lift-off. The thermal boundary resistances within nitride semiconductor LEDs can also be reduced or eliminated by forming a plurality of thin nitride epitaxial layers.09-03-2009
20090218586LED LAMP - The present invention relates to a light emitting diode (LED) lamp, and an object of the present invention is to provide an LED lamp in which an LED can be easily exchanged and external vibration can be absorbed to prevent the play thereof. To this end, an LED lamp according to the present invention comprises an LED package having a lead frame; a printed circuit board separated from the LED package and having a conductive pattern formed on a surface thereof facing the lead frame; and a pressing means for pressing the LED package toward the PCB so that the lead frame is in contact with the conductive pattern.09-03-2009
20090302345LED LAMP MODULE AND FABRICATION METHOD THEREOF - An LED lamp module is disclosed. An LED die is directly mounted on a heat sink element and then the LED chip is electrically connected to a circuit substrate or a circuit layer disposed over the heat sink element, wherein the size of the heat sink element is larger than the circuit layer or the substrate thereon, thereby providing the LED lamp module excellent heat dissipation. The structure of the LED lamp of the present invention simplifies the existing fabrication process, lowers the cost, and also increases the heat dissipation effect.12-10-2009
20090039378LIGHT-EMITTING FILM, LIGHT-EMITTING DEVICE AND PRODUCTION METHOD THEREOF - Provided is a light-emitting film having controllable resistivity, and a high-luminance light-emitting device, which can be driven at a low voltage, using such light-emitting film. The light-emitting film includes Cu as an addition element in a zinc sulfide compound which is a base material, wherein the zinc sulfide compound includes columnar ZnS crystals, and sites formed of copper sulfide on a grain boundary where the ZnS crystals are in contact with each other.02-12-2009
20090039377Optical Communication Module and Manufacturing Method Thereof - An infrared data communication module (A02-12-2009
20090321779SIDE VIEW LIGHT EMITTING DIODE PACKAGE - A side view LED package for a backlight unit includes a package body having a cavity with an inclined inner sidewall, first and second lead frames arranged in the package body, the cavity of the package body exposing a portion of at least one of the first and second lead frames placed in a bottom of the cavity to outside, a light emitting diode chip mounted on the bottom of the cavity to be electrically connected to the first and second lead frames, and a transparent encapsulant arranged in the cavity surrounding the light emitting diode chip. The cavity has a depth larger than a mounting height of the light emitting diode chip and not exceeding six times of the mounting height. The height of the sidewall is shortened to improve beam angle characteristics of emission light, increase light quantity, and prevent a molding defect of the sidewall.12-31-2009
20100001307ENCAPSULATION FOR ELECTRONIC AND/OR OPTOELECTRONIC DEVICE - A method of processing a flexible encapsulation scheme to encapsulate a flexible device, such as a display device in order to provide structural support for the display module. An upper transparent encapsulation layer covers and protects the media and active area of the device. A lower encapsulation layer is deposited over the under side of the display to complete the encapsulation and the two protective encapsulation layers are sealed. A driver housing may be positioned at the opposite end of the device to the overlap region of the encapsulation layers in order to protect the driver electronics.01-07-2010
20100012969LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF - There is provided a method of fabricating a vertical light emitting diode. The method comprises the steps of: growing a low doped first conductive semiconductor layer on a sacrificial substrate; forming an aluminum layer on the low doped first conductive semiconductor layer; forming an AAO layer having a large number of holes formed therein by performing anodizing treatment of the aluminum layer; etching and patterning the low doped first conductive semiconductor layer using the aluminum layer with a large number of the holes as a shadow mask to expose a portion of the low doped first conductive semiconductor layer, thereby forming a large number of grooves; removing the aluminum layer remaining on the low doped first conductive semiconductor layer; sequentially forming a high doped first conductive semiconductor layer, an active layer and a second conductive semiconductor layer on the low doped first conductive semiconductor layer with a large number of the grooves; forming a metal reflective layer and a conductive substrate on the second conductive semiconductor layer; separating the sacrificial substrate; and forming an electrode pad on the other surface of the low doped first conductive semiconductor layer, the electrode pad being filled in a large number of the grooves to be in ohmic contact with the high doped first conductive semiconductor layer01-21-2010
20100012968Light emitting element and method of making the same - A light emitting element includes a first electrode, a second electrode formed on a same side as the first electrode and including an area less than the first electrode, a first bump formed on the first electrode, and a second bump formed on the second electrode and including a level at a top thereof higher than that of the first bump. A flip-chip type light emitting element includes a spreading electrode, the spreading electrode including an extended part, and plural intermediate electrodes formed on the spreading electrode and arranged in a longitudinal direction of the extended part and centrally in a width direction of the extended part. The intermediate electrodes are disposed such that a distance of half a pitch thereof in the longitudinal direction is equal to or shorter than a distance from one of the intermediate electrodes to an edge of the extended part.01-21-2010
20100012967SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE - A semiconductor light emitting device package according to an embodiment comprising: a package body comprising a groove section; an electrode in the groove section; at least one semiconductor light emitting device electrically connected to the electrode in the groove section of the package body; an interconnection pattern on an outer peripheral surface of the package body and electrically connected to the electrode, wherein a part of the interconnection pattern is on a bottom surface of the package body; and a metal pattern is on the bottom surface of the package body corresponding to an area in which the semiconductor light emitting device is located.01-21-2010
20100038672LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME - Disclosed is a light emitting device. The light emitting device comprises a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, the second conductive semiconductor layer comprising a first area and a second area, a third conductive semiconductor layer on the second area of the second conductive semiconductor layer, a first electrode layer electrically connecting the first conductive semiconductor layer with the second conductive semiconductor layer of the second area, and a second electrode layer electrically connecting the second conductive semiconductor layer with the third conductive semiconductor layer.02-18-2010
20100038673Radiation-Emitting Chip Comprising at Least One Semiconductor Body - A chip includes at least one semiconductor body having a radiation-emitting region, and at least one first contact region which is provided for making electrical contact with the semiconductor body and is spaced apart laterally from the radiation-emitting region. An electrically conductive first contact layer which is transmissive to the emitted radiation and which connects a surface of the semiconductor body, is situated on the radiation exit side of the chip to the first contact region. The surface is free of the radiation-absorbing contact structures.02-18-2010
20100038671LIGHT-EMITTING ELEMENT CHIP, EXPOSURE DEVICE AND IMAGE FORMING APPARATUS - The light-emitting element chip includes: a substrate; a light-emitting portion including plural light-emitting elements each having a first semiconductor layer that has a first conductivity type and that is stacked on the substrate, a second semiconductor layer that has a second conductivity type and that is stacked on the first semiconductor layer, the second conductivity type being a conductivity type different from the first conductivity type, a third semiconductor layer that has the first conductivity type and that is stacked on the second semiconductor layer, and a fourth semiconductor layer that has the second conductivity type and that is stacked on the third semiconductor layer; and a controller including a logical operation element that performs logical operation for causing the plural light-emitting elements to perform a light-emitting operation, the logical operation element being formed by combining some sequential layers of the first, second, third and fourth semiconductor layers.02-18-2010
20100059784LIGHTING DEVICE OF LEDS ON A TRANSPARENT SUBSTRATE - Proposed is a lighting device (03-11-2010
20110175135Circuit Board For LED - A submount comprising a chip mounting area, a first bonding pad and a connecting portion is provided. An LED chip is mounted on the chip mounting area. The first bonding pad is electrically connected to an electrode of the LED chip. The connecting portion has a first hollow portion and is disposed between the chip mounting area and the first bonding pad. The first hollow portion is located between the chip mounting area and the first bonding pad. The first hollow portion is located in a central region of the connecting portion.07-21-2011
20100065882GLASS FOR COVERING OPTICAL ELEMENT, GLASS-COVERED LIGHT-EMITTING ELEMENT AND GLASS-COVERED LIGHT-EMITTING DEVICE - A glass-covered light-emitting element and a glass-covered light-emitting device are provided, which are covered with a glass having a low glass transition point and a thermal expansion coefficient close to that of the light-emitting element.03-18-2010
20100065881Light-emitting element capable of increasing amount of light emitted, light-emitting device including the same, and method of manufacturing light-emitting element and light-emitting device - A light-emitting element capable of increasing the amount of light emitted, a light-emitting device including the same, and a method of manufacturing the light-emitting element and the light-emitting device include a buffer layer having an uneven pattern formed thereon; a light-emitting structure including a first conductive pattern of a first conductivity type that is conformally formed along the buffer layer having the uneven pattern formed thereon, a light-emitting pattern that is conformally formed along the first conductive pattern, and a second conductive pattern of a second conductivity type that is formed on the light-emitting pattern; a first electrode electrically connected to the first conductive pattern; and a second electrode electrically connected to the second conductive pattern.03-18-2010
20100059785LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME - A method of fabricating a light emitting device initially forms a copper clad ceramic board of the light emitting device using hot-pressing technique at high temperature and photolithography process. Next, a circuit of the light emitting device is formed using die bonding and wire bonding/flip-chip processes. Finally, the light emitting device is sealed using transfer molding or injection molding process.03-11-2010
20100059786SEMICONDUCTOR CHIP ASSEMBLY WITH POST/BASE HEAT SPREADER AND SUBSTRATE - A semiconductor chip assembly includes a semiconductor device, a heat spreader, a substrate and an adhesive. The semiconductor device is electrically connected to the substrate and thermally connected to the heat spreader. The heat spreader includes a post and a base. The post extends upwardly from the base into an opening in the adhesive and an aperture in the substrate, and the base extends laterally from the post. The adhesive extends between the post and the substrate and between the base and the substrate. The assembly provides signal routing between a pad and a terminal.03-11-2010
20100065883PROCESS FOR MAKING CONTACT WITH AND HOUSING INTEGRATED CIRCUITS - A process for producing electrical contact connections for a component integrated in a substrate material is provided, the substrate material having a first surface region, and at least one terminal contact being arranged at least partially in the first surface region for each component, which is distinguished in particular by application of a covering to the first surface region and production of at least one contact passage which, in the substrate material, runs transversely with respect to the first surface region, in which process, in order to form at least one contact location in a second surface region which is to be provided, at least one electrical contact connection from the contact location to at least one of the terminal contacts is produced via the respective contact passages.03-18-2010
20100065879Optoelectronic Device with Housing Body - A housing body for an optoelectronic component comprises a main surface having a first area region and a second area region. The first area region and the second area region form a step in the main surface. The first area region and the second area region adjoin one another by means of an outer edge. The second area region and the outer edge enclose the first area region.03-18-2010
20100171143LIGHT EMITTING DIODE PACKAGE - There is provided an LED package having high heat dissipation efficiency. An LED package according to an aspect of the invention may include: a package body including a first groove portion being recessed into the package body and provided as a mounting area on the top of the package body; first and second lead frames arranged on a lower surface of the first groove portion while parts of the first and second lead frames are exposed; an LED chip mounted onto the lower surface of the first groove portion and electrically connected to the first and second lead frames; and a plurality of heat dissipation patterns provided on the bottom of the package body and formed of carbon nanotubes.07-08-2010
20100127303LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A light emitting device according to an embodiment includes a second electrode layer comprising at least one projection part; at least one current blocking layer on the projection part of the second electrode layer; a second conductive type semiconductor layer on the second electrode layer and the current blocking layer; an active layer on the second conductive type semiconductor layer; a first conductive type semiconductor layer on the active layer; and a first electrode layer on the first conductive type semiconductor layer, at least a portion of the first electrode layer corresponding with the current blocking layer in a vertical direction.05-27-2010
20110101407SEMICONDUCTOR LIGHT-EMITING DEVICE AND METHOD - A semiconductor light-emitting device can include a submount on which a semiconductor light-emitting element is mounted. The device can have a high light utilization efficiency with high reliability and can achieve a reduction in manufacturing cost as well as a decrease in size. The submount can have a reverse trapezoidal cross section having an upper surface that is larger than a bottom surface of the semiconductor light-emitting element. An adhesive can be used to fix the submount to the base board such that, when the submount is observed from above the semiconductor light-emitting element, the adhesive is not seen from above. In this state, the semiconductor light-emitting element can be connected to the base board via a bonding wire.05-05-2011
20110101410SEMICONDUCTOR CHIP ASSEMBLY WITH POST/BASE/POST HEAT SPREADER - A semiconductor chip assembly includes a semiconductor device, a heat spreader, a conductive trace and first and second adhesives. The heat spreader includes a first post, a second post and a base. The conductive trace includes a pad and a terminal. The semiconductor device is electrically connected to the conductive trace and thermally connected to the heat spreader. The first post extends from the base in a first vertical direction into a first opening in the first adhesive, the second post extends from the base in a second vertical direction into a second opening in the second adhesive and the base is sandwiched between and extends laterally from the posts. The conductive trace provides signal routing between the pad and the terminal.05-05-2011
20110101406Light emitting device package and method for manufacturing the same - The present invention provides a light emitting device package including: a light emitting device structure having a light emitting device and a lead frame connected to the light emitting device; and a heat radiating structure bonded to the light emitting device structure and radiating heat generated from the light emitting device, wherein the heat radiating structure includes a conductive substrate, an insulating pattern covering a front surface of the conductive substrate opposite to the light emitting device structure, and a metal pattern bonded to the conductive substrate and the lead frame.05-05-2011
20110101405LIGHT-EMITTING DIODE PACKAGE - A light-emitting diode package is provided. The light-emitting diode package comprises a substrate and a first metal layer disposed over the substrate. A solder layer is disposed on the first metal layer and a light-emitting diode chip is disposed on the solder layer, wherein the light-emitting diode chip comprises a conductive substrate and a multilayered epitaxial structure formed on the conductive substrate, and wherein the conductive substrate is adjacent to the solder layer.05-05-2011
20110073900SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor device includes: a semiconductor structure unit; an interconnect layer provided on the major surface side of the semiconductor structure unit; an electrode pad provided on a surface of the interconnect layer on a side opposite to a surface on which the semiconductor structure unit is provided, and the electrode pad electrically connected to the interconnect layer; a plurality of metal pillars joined to the electrode pad separately from each other; and an external terminal provided commonly at tips of the plurality of metal pillars, the metal pillars having an area in a plan view smaller than an area in a plan view of the external terminal.03-31-2011
20120119253Optoelectronic Component and Method for the Production Thereof - An optoelectronic component having a substrate (05-17-2012
20120119252Light Emitting Element, Light Emitting Device and Electric Appliance Using the Same - It is an object of the present invention to provide a light emitting element with low drive voltage. In addition, it is another object to provide a light emitting device having the light emitting element. Further in addition, it is another object to provide an electric appliance which has a light emitting element with low drive voltage. A light emitting element of the present invention comprises a pair of electrodes, a layer containing a light emitting element and a layer containing a mixture material which contains a conductive material formed from an inorganic compound and an insulating material formed from an inorganic compound, which are interposed between the pair of electrodes, wherein the layer containing the mixture material has a resistivity of 50,000 to 1,000,000 ohm cm, preferably, 200,000 to 500,000 ohm cm. The drive voltage of the light emitting element can be lowered with the foregoing structure.05-17-2012
20120119249LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - An LED and manufacturing method therefor. The LED comprises a compound semiconductor structure having first and second compound layers and active layer, first and second electrode layers atop the second compound semiconductor layer and connected to the two compound. An insulating layer is coated in regions other than where the first and second electrode layers are located. A conducting adhesive layer is formed atop the non-conductive substrate, connecting the same to the first electrode layer and insulating layer. Formed on one side surface of the non-conductive substrate and adhesive layer is a first electrode connection layer connected to the conducting adhesive layer. A second electrode connection layer on the other side surface is connected to the second electrode layer.05-17-2012
20120119248LIGHTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a lighting device includes the steps of: preparing a substrate having at least one lighting chip, a frame for surrounding the lighting chip, and a cover body for covering one side of the frame; bonding the frame and the substrate so that the lighting chip is located within a region surrounded by the frame; and bonding the cover body and the frame so that the cover body and the frame cooperatively define a receptacle to cover the lighting chip. A bonding force between the cover body and the frame is configured to be smaller than a bonding force between the frame and the substrate so that when the cover body is separated from the frame, the bonding between the frame and the substrate is not destroyed.05-17-2012
20120119246LIGHT EMITTING DIODE COMPONENTS INTEGRATED WITH THERMOELECTRIC DEVICES - The present disclosure relates to structures of LED components that integrate thermoelectric devices with LEDs on LED emitter substrates for cooling the LEDs. The present disclosure also related to methods for integrating LED dies with thermoelectric elements. The LED component includes an LED emitter substrate with a cavity in a downward facing surface of the LED emitter substrate and thermal vias that extend from a bottom of the cavity to an area close to an upward facing surface of the LED emitter substrate. The device also includes thermoelectric elements disposed in the cavity where the thermoelectric elements connect with their corresponding thermal vias. The device further includes a thermoelectric substrate in the cavity to electrically connect to the thermoelectric elements. The device further includes an LED die on the upward facing surface of the LED emitter substrate such that the LED die is opposite the cavity.05-17-2012
20110024786LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE LIGHT EMITTING DEVICE - A method of manufacturing a light emitting device includes: a first step of forming on a supporting substrate made of a stainless steel, a plurality of conductive members each including a first region containing Au and a second region containing a metallic member having a diffusion coefficient with respect to a metal in the stainless steel smaller than a diffusion coefficient of Au with respect to the metal in the stainless steel, a second step of forming a base member made of a light-blocking resin on the supporting substrate between the conductive members, a third step of bonding a light emitting element on an upper surface of a conductive member through an adhesive member, a fourth step of covering the light emitting element with an optically transmissive sealing member, and a fifth step of removing the supporting substrate and individually separating the light emitting devices.02-03-2011
20110024788SEMICONDUCTOR COMPOSITE APPARATUS, LED, LED PRINTHEAD, AND IMAGE FORMING APPARATUS - A semiconductor composite apparatus includes a substrate and a planarizing layer, and a semiconductor thin film. The planarizing layer is formed on the substrate either directly or indirectly. The planarizing layer includes a first surface that faces the substrate, and a second surface that is on the side of the planarizing layer remote from the substrate. The semiconductor thin film formed on the planarizing layer. The second surface has a roughness of not more than 5 nm.02-03-2011
20110049556SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PROCESS FOR PRODUCTION THEREOF - The present invention provides a semiconductor light-emitting device capable of keeping high luminance intensity even if electric power increases, and hence the device is suitable for lighting instruments such as lights and lamps. This semiconductor device comprises a metal electrode layer provided with openings, and is so large in size that the electrode layer has, for example, an area of 1 mm03-03-2011
20090026487LIGHT-EMITTING DEVICES HAVING AN ACTIVE REGION WITH ELECTRICAL CONTACTS COUPLED TO OPPOSING SURFACES THEREOF AND METHODS OF FORMING THE SAME - A light-emitting device includes a substrate having first and second opposing surfaces, an active region on the first surface of the substrate, a via in the substrate between the first and second opposing surfaces, a contact plug in the via, a first electrical contact on the active region, and a second electrical contact adjacent to the second surface that is coupled to the active region by the contact plug. The via and the first electrical contact are offset with respect to each other relative to an axis that is substantially perpendicular to the first and second surfaces of the substrate.01-29-2009
20090026486Nitride based compound semiconductor light emitting device and method of manufacturing the same - A nitride based compound semiconductor light emitting device having a first substrate and a nitride based compound semiconductor part including a p-type nitride based compound semiconductor layer, an active layer, and an n-type nitride based compound semiconductor layer in this order from the first substrate side, in which the first substrate has a through hole penetrating through the first substrate in up and down directions and a metal film is buried in the through hole, and its method of manufacturing. The heat dissipation property is improved in the nitride based compound semiconductor light emitting device.01-29-2009
20090026485LIGHT-EMITTING DEVICE - A light-emitting device of the present invention includes: a LED chip 01-29-2009
20110031524LIGHT EMITTING DIODE - The invention provides a light emitting diode. The light emitting diode includes a ceramic substrate having a first surface and an opposite second surface. A first conductive trace metal layer and a second conductive trace metal layer are disposed on the first surface of the ceramic substrate. At least one light emitting diode chip is disposed on the first surface of the ceramic substrate, respectively and electrically connected to the first and second conductive trace metal layers. A plurality of thermal metal pads is disposed on the second surface of the ceramic substrate, wherein the thermal metal pads are electrically isolated from the light emitting diode chip.02-10-2011
20110024785Light Emitting Diode Device - An electronic assembly includes a Light Emitting Diode (LED) and a substrate. The LED has a solderable surface other than the contacts. The substrate has an opening. The solderable surface is mounted substantially over the opening. When the opening is filled with solder, the solderable surface is metallically bonded with the solder in the opening.02-03-2011
20110248311LIGHT EMITTING DEVICE PACKAGE - Disclosed is a light emitting device package. The light emitting device package includes a semiconductor substrate comprising a first surface at a first depth from an upper surface of the semiconductor substrate and a second surface at a second depth from the first surface; and a light emitting part on the second surface of the semiconductor substrate.10-13-2011
20080246049Semiconductor Device, Method for Fabricating an Electrode, and Method for Manufacturing a Semiconductor Device - A semiconductor device includes a p-type nitride semiconductor layer (10-09-2008
20080237627Semiconductor light-emitting device - A semiconductor light-emitting device includes a lead frame, a semiconductor light-emitting element mounted on the top surface of the bonding region, and a case covering part of the lead frame. The bottom surface of the bonding region is exposed to the outside of the case. The lead frame includes a thin extension extending from the bonding region and having a top surface which is flush with the top surface of the bonding region. The thin extension has a bottom surface which is offset from the bottom surface of the bonding region toward the top surface of the bonding region.10-02-2008
20100264452Methods for high temperature processing of epitaxial chips - High temperature semiconducting materials in a freestanding epitaxial chip enables the use of high temperature interconnect and bonding materials. Process materials can be used which cure, fire, braze, or melt at temperatures greater than 400 degrees C. These include, but are not limited to, brazing alloys, laser welding, high-temperature ceramics and glasses. High temperature interconnect and bonding materials can additionally exhibit an index of refraction intermediate to that of the freestanding epitaxial chip and its surrounding matrix. High index, low melting point glasses provide a hermetic seal of the semiconductor device and also index match the freestanding epitaxial chip thereby increasing extraction efficiency. In this manner, a variety of organic free semiconducting devices, such as solid-sate lighting sources, can be created which exhibit superior life, efficiency, and environmental stability.10-21-2010
20100264450LIGHT SOURCE - Embodiments of a light source are disclosed herein. An embodiment of the light source comprises a first terminal and a second terminal. The first terminal comprises a first terminal first portion and a first terminal second portion, wherein at least a portion of the first terminal second portion is located on a first plane, the first terminal second portion comprising at least two contacts separated by a space. A second terminal comprises a second terminal first portion and a second terminal second portion. The second terminal first portion is located proximate the first terminal first portion. The second terminal second portion is located substantially on the first plane and in the space. A light emitter is affixed to the first terminal first portion, the light emitter is electrically connected to the first terminal first portion. A connection exists between the light emitter and the second terminal first portion.10-21-2010
20110248309ORGANIC-LIGHT-EMITTING-DIODE FLAT-PANEL LIGHT-SOURCE APPARATUS AND METHOD OF MANUFACTURING THE SAME - Provided are an organic-light-emitting-diode (OLED) flat-panel light-source apparatus and a method of manufacturing the same. The device includes an anode and a cathode, to which externally applied power is supplied, disposed on a substrate, an organic emission layer (EML) interposed between the anode and the cathode and configured to emit light due to power supplied through the anode and the cathode, and a subsidiary electrode layer including a plurality of subsidiary electrodes bonded to the anode or the cathode and configured to supply power to the anode or the cathode or electrically insulated from the anode or the cathode and configured to supply power to other emission regions.10-13-2011
20080230799Semiconductor Light-Emitting Device with Electrode for N-Polar Ingaain Surface - One embodiment of the present invention provides a semiconductor light-emitting device. The semiconductor light-emitting device includes a substrate, a p-type doped InGaAIN layer, an n-type doped InGaAIN layer, and an active layer situated between the p-type doped and n-type doped InGaAIN layers. The semiconductor light-emitting device further includes an n-side Ohmic-contact layer coupled to an N-polar surface of the n-type doped InGaAIN layer. The Ohmic-contact layer comprises at least one of Au, Ni, and Pt, and at least one of group IV elements.09-25-2008
20110175136SEMICONDUCTOR CHIP ASSEMBLY WITH POST/BASE HEAT SPREADER AND PLATED THROUGH-HOLE - A semiconductor chip assembly includes a semiconductor device, a heat spreader, a conductive trace and an adhesive. The heat spreader includes a post and a base. The conductive trace includes a pad, a terminal and a plated through-hole. The semiconductor device is electrically connected to the conductive trace and thermally connected to the heat spreader. The post extends upwardly from the base into an opening in the adhesive, and the base extends laterally from the post. The conductive trace provides signal routing between the pad and the terminal using the plated through-hole.07-21-2011
20120175666 ELECTRONIC DEVICE AND A METHOD OF MANUFACTURING THE SAME - The invention relates to a substantially transparent electronic device comprising a first contact surface provided with a first pattern of electrically conductive lines and a second contact surface provided with a second pattern of electrically conductive lines, the first contact surface extending parallel to the second contact surface, wherein the first pattern is rotationally displaced with respect to the second pattern by an angle between 15 and 165 degrees. The electrically conductive lines of the said first pattern and the said second pattern are substantially not transparent for visible light and are preferably used as shunting lines. The invention further relates to a method of manufacturing such device.07-12-2012
20120175665LIGHT-EMITTING DEVICE PACKAGE AND METHOD OF MANUFACTURING THE SAME - A light-emitting device package includes: a package body on which a mount portion and a terminal portion are disposed; a light-emitting device chip that is mounted on the mount portion; and a bonding wire that electrically connects an electrode of the light-emitting device chip and the terminal portion. The bonding wire includes a rising portion that rises from the light-emitting device chip to a loop peak, and an extended portion that connects the loop peak and the terminal portion. A first kink portion, which is bent in a direction intersecting a direction in which the rising portion rises, is disposed on the rising portion.07-12-2012
20100032708DISPLAY DEVICE AND MANUFACTURING METHOD OF THE SAME - A plurality of wires and electrodes are formed by forming a first conductive film, selectively forming a resist over the first conductive film, forming a second conductive film over the first conductive film and the resist, removing the second conductive film formed over the resist by removing the resist, forming a third conductive film so as to cover the second conductive film formed over the first conductive film, and selectively etching the first conductive film and the third conductive film. Thus, wires using a low resistance material can be formed in a large-sized panel, and thus, a problem of signal delay can be solved.02-11-2010
20110163349METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT, GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND LAMP - The present invention provides a method for manufacturing a group III nitride semiconductor light emitting element, with which warping can be suppressed upon the formation of respective layers on the substrate, a semiconductor layer including a light emitting layer of excellent crystallinity can be formed, and excellent light emission characteristics can be obtained; such a group III nitride semiconductor light emitting element; and a lamp. Specifically disclosed is a method for manufacturing a group III nitride semiconductor light emitting element, in which an intermediate layer, an underlayer, an n-type contact layer, an n-type cladding layer, a light emitting layer, a p-type cladding layer, and a p-type contact layer are laminated in sequence on a principal plane of a substrate, wherein a substrate having a diameter of 4 inches (100 mm) or larger, with having an amount of warping H within a range from 0.1 to 30 μm and at least a part of the edge of the substrate warping toward the principal plane at room temperature, is prepared as the substrate; the X-ray rocking curve full width at half maximum (FWHM) of the (0002) plane is 100 arcsec or less and the X-ray rocking curve FWHM of the (10-10) plane is 300 arcsec or less, in a state where the intermediate layer has been formed on the substrate and where thereafter the underlayer and the n-type contact layer are formed on the intermediate layer; and furthermore the n-type cladding layer, the light emitting layer, the p-type cladding layer, and the p-type contact layer are formed on the n-type contact layer.07-07-2011
20120267676Display Device and Method of Manufacturing the Same - A display device using an organic light emitting element is provided which is structured so as to ensure excellent display performance by avoiding dot defect and improve long-term reliability. The distance between an organic light emitting element and a sealing substrate is controlled using the top of a bank that is placed in a pixel portion and the top of an insulating film that is placed in a driving circuit portion. As a result, a gap is provided between the organic light emitting element and the sealing substrate and a damage to the organic light emitting element can be avoided. Furthermore, the sealing substrate can be as close to an element substrate as possible, thereby keeping the amount of moisture that enters the display device from its sides small.10-25-2012
20120267675LIGHT-EMITTING DIODE DIE PACKAGES AND ILLUMINATION APPARATUSES USING SAME - The present invention relates to an LED die package, which has a light-emitting diode die having a sapphire layer, a first doped layer doped with a p- or n-type dopant, and a second doped layer doped with a different dopant from that doped in the first doped layer. A surface of the sapphire layer opposite to the surface on which the first doped layer is disposed is formed with generally inverted-pyramidal-shaped recesses and overlaid with a phosphor powder layer. Each of the first and the second doped layers has an electrode-forming surface formed with an electrode, on which an insulation layer is disposed and formed with exposure holes for exposing the electrodes. The exposure holes are each filled with an electrically conductive linker.10-25-2012
20120267670ORGANIC LIGHT-EMITTING DISPLAY AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display having an improved aperture ratio, the organic light-emitting display including a rear electrode, an opposite electrode, and a pixel electrode between the rear electrode and the opposite electrode. Here, an insulating layer is interposed between the pixel electrode and the rear electrode, wherein the pixel electrode, the insulating layer, and the rear electrode are configured as a capacitor of the organic light-emitting display. In such a structure, as the capacitor is disposed in a light-emitting area where the pixel electrode exists, it is not necessary to provide an additional space for a capacitor, thus improving an aperture ratio of the display.10-25-2012
20120267671LIGHT EMITTING DEVICE PACKAGE INCLUDING UV LIGHT EMITTING DIODE - Provided is a light emitting device package, which includes a ceramic body, an ultraviolet light emitting diode, a support member, and a glass film. The ceramic body defines a cavity. The ultraviolet light emitting diode is disposed within the cavity. The support member is disposed on the body, and surrounds the cavity. The glass film is coupled to the support member, and covers the cavity. Since the light emitting device package includes the ceramic body to efficiently dissipate heat, and the glass film is directly attached to the ceramic body to decrease the number of components, thereby simplifying the manufacturing process thereof, and reducing the manufacturing costs thereof.10-25-2012
20110156086LIGHT EMITTING DIODE HAVING ELECTRODE EXTENSIONS - An exemplary embodiment of the present invention discloses a light emitting diode including a lower contact layer having a first edge, a second edge opposite to the first edge, a third edge connecting the first edge to the second edge, and a fourth edge opposite to the third edge, a mesa structure arranged on the lower contact layer, the mesa structure including an active layer and an upper contact layer, a first electrode pad arranged on the lower contact layer, a second electrode pad arranged on the mesa structure, a first lower extension and a second lower extension extending from the first electrode pad towards the second edge, distal ends of the first lower extension and the second lower extension being farther away from each other than front ends thereof contacting the first electrode pad, and a first upper extension, a second upper extension, and a third upper extension extending from the second electrode pad. In addition, the first upper extension and the second upper extension extend from the second electrode pad to enclose the first lower extension and the second lower extension, and the third upper extension extends to a region between the first lower extension and the second lower extension.06-30-2011
20110156088LIGHT EMITTING DEVICE - A light emitting device includes at least one particle over the light emitter. Light at a first wavelength travels from the emitter along a first path adjacent to the particle and at a second wavelength along a second path that passes through the particle. The particle converts the light on the second path from the first wavelength into a second wavelength. The light at the first wavelength mixes with the light at the second wavelength to form light of a third wavelength, which may be white light or another color.06-30-2011
20090001407SEMICONDUCTOR LIGHT-EMITTING DEVICE, MANUFACTURING METHOD THEREOF, AND LAMP - There is provided a semiconductor light-emitting device having excellent light extraction efficiency, a manufacturing method thereof, and a lamp. A semiconductor light-emitting device 01-01-2009
20090001406Light-emitting device and method for fabricating same - An LED chip is mounted on a submount, and submount electrodes are formed to constitute a submount member. A light-emitting unit is configured by mounting the submount member on a flat substrate. A lead frame member having a lead frame electrode is configured using a lead frame and a resin mold. A light-emitting device is obtained by overlapping the light-emitting unit and the lead frame member, so that the electrodes contact each other. There is accordingly obtained a light-emitting device that is highly reliable with respect to vibration, shock, and other external forces; that efficiently dissipates generated heat; and that is readily fabricated; and a method for fabricating same.01-01-2009
20090001405LIGHT EMITTING DEVICE PACKAGE AND MANUFACTURING METHOD THEREOF - Provided is a light emitting device package. The light emitting device package comprises a base substrate, a frame, and a light emitting device. The base substrate comprises a plurality of electrode pads. The frame is formed of silicon, attached on the base substrate, and has an opening. The light emitting device is electrically connected to the electrode pad in the opening.01-01-2009
20090001404SEMICONDUCTOR LIGHT EMITTING DEVICE, PROCESS FOR PRODUCING THE SAME, AND LED ILLUMINATING APPARATUS USING THE SAME - The present invention provides a semiconductor light emitting device comprising: a wiring substrate in which a pair of positive and negative electrodes are formed on a front surface of an insulating substrate, an LED arranged over one of the electrodes, or arranged to stretch over both of the electrodes and connected electrically to the positive and negative electrode pair, and a metal frame having, at the inner circumferential side thereof, a tapered face and arranged around the electrode pair on the front surface of wiring substrate, wherein the metal frame is jointed to the front surface of the wiring substrate through an adhesive layer, and a plating layer is formed on a surface of the metal frame and surfaces of the electrode pair.01-01-2009
20090001403INDUCTIVELY EXCITED QUANTUM DOT LIGHT EMITTING DEVICE - A method and apparatus is provided for activating a layer (01-01-2009
20090001402Semiconductor element and method of making the same - A semiconductor light-emitting element includes a nitride semiconductor layer with an active layer. The nitride semiconductor layer has a main surface formed with a first bonding layer made of gold or an alloy of gold and tin. The first bonding layer is bonded to a second bonding layer made of gold or an alloy of gold and tin. The second bonding layer is bonded to a support layer which has a thermal conductivity not smaller than 100 W/mK. The first bonding layer and the second bonding layer have a total thickness not smaller than 5 μm.01-01-2009
20090309119Gallium Nitride Based Compound Semiconductor Light-Emitting Device and Method for manufacturing Same - The present invention provides a gallium nitride based compound semiconductor light-emitting device having high light emission efficiency and a method of manufacturing the same. The gallium nitride based compound semiconductor light-emitting device includes: a substrate 12-17-2009
20090283789Semiconductor Light Emitting Device - The present disclosure relates to a semiconductor light emitting device which generates light by recombination of electrons and holes, and which includes: a first finger electrode for supplying one of the electrons and holes, a second finger electrode supplying the other of the electrons and holes, and spaced apart from the first finger electrode at a first interval; and a third finger electrode electrically connected to the first finger electrode, and spaced apart from the second finger electrode at a second interval which is smaller than the first interval.11-19-2009
20090230421Semiconductor package structure, lead frame and conductive assembly for the same - A light emitting diode package structure, and a lead frame and a conductive assembly for the same are described. The light emitting diode package structure includes a conductive assembly, a semiconductor chip, and a package body. The conductive assembly includes a chip support and a bonding support. The chip support has a carrier surface, and the bonding support has at least one wiring portion surrounding the carrier surface. The semiconductor chip is disposed on the carrier surface and electrically connected to the wiring portion through a wire. The n, the package is used to encapsulate the semiconductor chip, the wire, the carrier surface, and the wiring portion so as to form a light emitting diode package structure.09-17-2009
20080315241Surface Mountable Chip - A surface mountable device having a circuit device and a base section. The circuit device includes top and bottom layers having a top contact and a bottom contact, respectively. The base section includes a substrate having a top base surface and a bottom base surface. The top base surface includes a top electrode bonded to the bottom contact, and the bottom base surface includes first and second bottom electrodes that are electrically isolated from one another. The top electrode is connected to the first bottom electrode, and the second bottom electrode is connected to the top contact by a vertical conductor. An insulating layer is bonded to a surface of the circuit device and covers a portion of a vertical surface of the bottom layer. The vertical conductor includes a layer of metal bonded to the insulating layer.12-25-2008
20090166661Light-emitting diode packaging structure and module and assembling method thereof - A light-emitting diode packaging structure, a packaging module and the assembling method thereof are disclosed. The assembling method comprises the steps of: providing a light-emitting diode, wherein the light-emitting diode has two electrode leads; providing two metal plates, wherein each of the metal plates has at least a clamping portion; holding the electrode leads against the metal plates respectively; and bending the clamping portion of each of the metal plates to fix the electrode leads on the metal plates. Further, a plurality of light-emitting diodes are allowed to be mounted on the metal plates to form the light-emitting diode packaging module.07-02-2009
20080224165Top-Emitting Light Emitting Diodes and Methods of Manufacturing Thereof - Provided are a top-emitting nitride-based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising an interface modification layer formed on the p-type clad layer and a transparent conductive thin film layer made up of a transparent conductive material formed on the interface modification layer; and a process for preparing the same. In accordance with the top-emitting nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current-voltage properties.09-18-2008
20120199867METHOD FOR ATTACHING AN ELECTRONIC COMPONENT TO A PRODUCT - An electronic component is attached to a product, using a transfer method involving the use of a transfer sheet including a substrate sheet and at least one transfer layer covering a portion of the front surface of the substrate sheet. The transfer method consists in: placing the transfer layer in contact with the product; applying a pressure against the back surface of the substrate sheet; and finally removing the substrate sheet, said at least one transfer layer remaining affixed to the product. In addition, the attachment method includes a step prior to the transfer method, during which at least one electronic assembly including at least one electronic chip attached to at least one wire is positioned between the product and the substrate sheet, such that at least one portion of each assembly is held in place by a transfer layer following the removal of the substrate sheet.08-09-2012
20080290362Illumination Device with a Wavelength Converting Element Held by a Support Structure Having an Aperture - An illumination device includes a light source, such as one or more light emitting diodes and a wavelength converting element that is mounted on an opaque support structure. The support structure includes an aperture with which the wavelength converting element is aligned so that the converted light is emitted through the aperture. The wavelength converting element may be a rigid structure, such as a luminescent ceramic and the aperture may be a hole through the support structure. The support structure may hold the wavelength converting element so that it is physically separated from the light source, or alternatively, the support structure may place the wavelength converting element in physical contact with the light source.11-27-2008
20080210972Nitride-based semiconductor light emitting diode - Provided is a nitride-based semiconductor LED including a substrate; a first conductive-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the first conductive-type nitride semiconductor layer; a second conductive-type nitride semiconductor layer formed on the active layer; a transparent electrode formed on the second conductive-type nitride semiconductor layer; a second conductive-type electrode pad formed on the transparent electrode; a plurality of second conductive-type electrodes extending from the second conductive-type electrode pad in one direction so as to be formed in a line; a first conductive-type electrode pad formed on the first conductive-type nitride semiconductor layer, where the active layer is not formed, so as to be positioned on the same side as the second conductive-type electrode pad; and a plurality of first conductive-type electrodes extending from the first conductive-type electrode pad in one direction so as to be formed in a line.09-04-2008
20080210970Fabrication of Conductive Metal Layer on Semiconductor Devices - A method for fabrication of a light emitting device on a substrate, the light emitting device having a wafer with multiple epitaxial layers and an ohmic contact layer on the epitaxial layers remote from the substrate. The method includes the steps: (a) applying to the ohmic contact layer a seed layer of a thermally conductive metal; (b) electroplating a relatively thick layer of the conductive metal on the seed layer; and (c) removing the substrate. A corresponding light emitting device is also disclosed. The light emitting device is a GaN light emitting diode or laser diode.09-04-2008
20080210971NICKEL TIN BONDING SYSTEM WITH BARRIER LAYER FOR SEMICONDUCTOR WAFERS AND DEVICES - A light emitting diode structure is disclosed that includes a light emitting active portion formed of epitaxial layers and carrier substrate supporting the active portion. A bonding metal system that predominates in nickel and tin joins the active portion to the carrier substrate. At least one titanium adhesion layer is between the active portion and the carrier substrate and a platinum barrier layer is between the nickel-tin bonding system and the titanium adhesion layer. The platinum layer has a thickness sufficient to substantially prevent tin in the nickel tin bonding system from migrating into or through the titanium adhesion layer.09-04-2008
20110254044LIGHT EMITTING DEVICE AND METHOD OF FABRICATING A LIGHT EMITTING DEVICE - A light emitting device and a method of fabricating a light emitting device are provided. The light emitting device includes a carrier substrate, at least one epitaxy structure, a high resistant ring wall, a first electrode, and a second electrode. The epitaxy structure is disposed on the carrier substrate and includes a first semiconductor layer, an active layer, and a second semiconductor layer stacked in sequence. The first semiconductor layer is relatively away from the carrier substrate and the second semiconductor layer is relatively close to the carrier substrate. The high resistant ring wall surrounds the epitaxy structure and a width of the high resistant ring wall is greater than 5 μm. The first electrode is disposed between the carrier substrate and the epitaxy structure. The second electrode is disposed at a side of the epitaxy structure away from the carrier substrate.10-20-2011
20110254043ROD-LIKE LIGHT-EMITTING DEVICE, METHOD OF MANUFACTURING ROD-LIKE LIGHT-EMITTING DEVICE, BACKLIGHT, ILLUMINATING DEVICE, AND DISPLAY DEVICE - To facilitate electrode connections and achieve a high light emitting efficiency, a rod-like light-emitting device includes a semiconductor core of a first conductivity type having a rod shape, and a semiconductor layer of a second conductivity type formed to cover the semiconductor core. The outer peripheral surface of part of the semiconductor core is exposed.10-20-2011
20110163347Series Connected Segmented LED - A light source and method for making the same are disclosed. The light source includes a substrate, and a light emitting structure that is divided into segments. The light emitting structure includes a first layer of semiconductor material of a first conductivity type deposited on the substrate, an active layer overlying the first layer, and a second layer of semiconductor material of an opposite conductivity type from the first conductivity type overlying the active layer. A barrier divides the light emitting structure into first and second segments that are electrically isolated from one another. A serial connection electrode connects the first layer in the first segment to the second layer in the second segment. A power contact is electrically connected to the second layer in the first segment, and a second power contact electrically connected to the first layer in the second segment.07-07-2011
20110001162LIGHT EMITTING DIODE PACKAGE - To provide a light emitting diode package of which the height of protrusion of a thermal via is decreased without decreasing the flexural strength of an insulating substrate.01-06-2011
20080203420Collective Substrate, Semiconductor Element Mount, Semiconductor Device, Imaging Device, Light Emitting Diode Component and Light Emitting Diode - A collective substrate (08-28-2008
20080203422Structure of light emitting diode and method to assemble thereof - A structure of a light emitting diode is provided. The light emitting diode comprises a light emitting diode die; two conductive frames electronically and respectively connecting to the cathode and anode of the light emitting diode die, and two substrates. Each conductive frame has a fixing hole and each substrate has a protrusive pillar. The upper opening of the fixing hole is broader than the bottom opening. The protrusive pillar is inserted into the fixing hole and the shape of the protrusive pillar is deformed for fitting and binding with the fixing hole.08-28-2008
20110163348SEMICONDUCTOR CHIP ASSEMBLY WITH BUMP/BASE HEAT SPREADER AND INVERTED CAVITY IN BUMP - A semiconductor chip assembly includes a semiconductor device, a heat spreader, a conductive trace and an adhesive. The heat spreader includes a bump and a base. The conductive trace includes a pad and a terminal. The semiconductor device is mounted on the bump opposite a cavity in the bump, is electrically connected to the conductive trace and is thermally connected to the bump. The bump extends from the base into an opening in the adhesive and the base extends laterally from the bump. The conductive trace is located outside the cavity and provides signal routing between the pad and the terminal.07-07-2011
20120199870ORGANIC LIGHT EMITTING DEVICE - An organic light emitting device includes a first electrode, a second electrode, an organic emission layer between the first electrode and the second electrode, and an auxiliary electrode in a hole which penetrates the second electrode and the organic emission layer, and exposes the first electrode.08-09-2012
20100320499LIGHT EMITTING DIODE REPLACEMENT LAMP - Thermal management and control techniques for light emitting diode and other incandescent replacement light technologies using a current controller are disclosed.12-23-2010
20100320500METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE HAVING AN EVEN COATING THICKNESS USING ELECTRO-LESS PLATING AND RELATED DEVICE - A method of manufacturing a semiconductor device includes forming a diffusion barrier layer on a substrate, and forming at least two features on the substrate such that the diffusion barrier layer is respectively disposed between each feature and the substrate and contacts the at least two features. A first impurity region of the substrate contains impurities of a first type, a second impurity region of the substrate contains impurities of a second type, different from the first type, a first feature of the at least two features is in the first impurity region, and a second feature of the at least two features is in the second impurity region, such that the second feature is electrically isolated from first feature by the different impurity regions.12-23-2010
20100320498LIGHT-EMITTING DIODE DEVICE - A light-emitting diode device includes: a substrate; and a semiconductor layered structure including an n-type semiconductor layer that has an exposed region, and a p-type semiconductor layer that is disposed over the n-type semiconductor layer without extending over the exposed region. An electrode unit is electrically coupled to the semiconductor layered structure, and includes a first electrode and a second electrode. The second electrode has an electrode pad, an end node, and a connecting strip. The electrode pad is larger than the end node. The connecting strip is narrower than the end node.12-23-2010
20130168723MOLDED PACKAGE FOR LIGHT EMITTING DEVICE - The present invention provides a molded package for a light emitting device including a molded resin and first and second leads, the exposed surface of the first lead having a first and second edge portions opposed to each other so as to put a mounting area therebetween in a first direction, the first and second edge portions respectively having one first cutout and second cutouts, the mounting area having a size not less than a distance between the first and the second cutouts and less than a distance between the first the second edge portions in the first direction.07-04-2013
20130168724WARM WHITE LIGHT LED CHIP WITH HIGH BRIGHTNESS AND HIGH COLOR RENDERING - A warm white light LED chip with high brightness and high color rendering includes a white light part emitting a white light, a colored light part emitting a colored light with a wavelength of 580 nm-660 nm, an N electrode (07-04-2013
20130168725OPTOELECTRONIC DEVICE COMPRISING NANOSTRUCTURES OF HEXAGONAL TYPE CRYSTALS - An optoelectronic device comprising: a first conductive layer, a second conductive layer, an active layer between the first conductive layer and the second conductive layer, wherein the active layer comprises a submicrometer size structure of hexagonal type crystals of an element or alloy of elements selected from the carbon group.07-04-2013
20130168722SURFACE-MOUNTING LIGHT EMITTING DIODE DEVICE AND METHOD FOR MANUFACTURING THE SAME - An SMT LED device includes an LED and a circuit board carrying the LED. The circuit board has two copper pads thereon, each being provided with a solder on an inner later side thereof which faces the other copper pad. The LED includes two pins and each pin includes a horizontal protrusion and a vertical portion. The LED is mounted on the circuit board between the two copper pads. The solders securely and electrically connect the two pins of the LED with the circuit board.07-04-2013
20110068362Light-Emitting Devices Having Multiple Encapsulation Layers With at Least One of the Encapsulation Layers Including Nanoparticles and Methods of Forming the Same - A light-emitting device includes an active region that is configured to emit light responsive to a voltage applied thereto. A first encapsulation layer at least partially encapsulates the active region and includes a matrix material and nanoparticles, which modify at least one physical property of the first encapsulation layer. A second encapsulation layer at least partially encapsulates the first encapsulation layer.03-24-2011
20100283081LIGHT-EMITTING DEVICE - A light-emitting device comprising a semiconductor light-emitting stack, comprising a light emitting area; an electrode formed on the semiconductor light-emitting stack, wherein the electrode comprises a current injected portion and an extension portion; a current blocking structure formed between the current injected portion and the semiconductor light-emitting stack, and formed between a first part of the extension portion and the semiconductor light-emitting stack; and an electrical contact structure formed between a second part of the extension portion and the semiconductor light-emitting stack.11-11-2010
20110254046LIGHT-EMITTING DEVICE - The present invention is related to a light-emitting device. The present invention illustrates a vertical light-emitting device in one embodiment, comprising the following elements: a conductive substrate includes a through-hole, a patterned semiconductor structure disposed on a first surface of the substrate, a first bonding pad and a second bonding pad disposed on a second surface of the substrate, a conductive line passing through the through-hole connecting electrically the semiconductor structure layer, and an insulation layer on at least one sidewall of the through-hole insulates the conductive line form the substrate. The present invention illustrates a horizontal light-emitting device in another embodiment, comprising the following elements: a substrate includes a first tilted sidewall, a patterned semiconductor structure disposed on a first surface of the substrate, a first conductive line is disposed on at least the first tilted sidewall of the substrate and connecting electrically the patterned semiconductor structure.10-20-2011
20110133242LIGHT EMITTING APPARATUS - A light emitting device including a contact layer, a blocking layer over the contact layer, a protection layer adjacent the blocking layer, a light emitter over the blocking layer, and an electrode layer coupled to the light emitter. The electrode layer overlaps the blocking layer and protection layer, and the blocking layer has an electrical conductivity that substantially blocks flow of current from the light emitter in a direction towards the contact layer. In addition, the protection layer may be conductive to allow current to flow to the light emitter or non-conductive to block current from flowing from the light emitter towards the contact layer.06-09-2011
20110133245MELT-PROCESSABLE, INJECTION-MOLDABLE THERMOPLASTIC POLYMER COMPOSITION AND SEMI-CONDUCTIVE DEVICES FABRICATED THEREWITH - A thermoplastic, hydrogenated vinyl aromatic/conjugated diene block polymer composition, especially a hydrogenated styrene/butadiene triblock composition, functions well as a LED encapsulating material in that it provides one or more of optical clarity, thermal stability, ultraviolet light resistance, melt-processability and injection-moldability. The resulting LED resists deformation after setting or hardening under typical solder reflow conditions.06-09-2011
20110133240LIGHT EMITTING DEVICE PACKAGE AND LIGHT UNIT HAVING THE SAME - Discussed is an LED package The LED package includes a body having a cavity at one side thereof, at least one of lead frames having a bottom frame and a sidewall frame in the cavity, and a light emitting device electrically connected with the lead frames.06-09-2011
20110133239Substrate structrue for light-emitting diode - Disclosed is a substrate structure for light-emitting diode (LED), including an upper layer substrate, a flexible printed circuit, a lower layer substrate, and an isolation substance. The upper layer substrate has forming a conductor pattern to provide a bonding zone and a plurality of electrode zones. The flexible printed circuit is bonded under the upper layer substrate. The lower layer substrate is bonded under the flexible printed circuit and has forming conductor lines. The isolation substance is coated on the top surface of the upper layer substrate and the bottom surface of the lower layer substrate. As such, a substrate structure comprised of upper and lower layers made of the upper-layer and lower-layer substrates interposing a core made of the flexible printed circuit is formed.06-09-2011
20100181594SEMICONDUCTOR CHIP ASSEMBLY WITH POST/BASE HEAT SPREADER AND CAVITY OVER POST - A semiconductor chip assembly includes a semiconductor device, a heat spreader, a conductive trace and an adhesive. The semiconductor device extends into a cavity in the adhesive, is electrically connected to the conductive trace and is thermally connected to the heat spreader. The heat spreader includes a post and a base. The post extends upwardly from the base into an opening in the adhesive and is located below the cavity, and the base extends laterally from the post. The cavity extends to the post. The adhesive extends between the cavity and the conductive trace and between the base and the conductive trace. The conductive trace is located outside the cavity and provides signal routing between a pad and a terminal.07-22-2010
20110084303RADIANT HEAT STRUCTURE FOR PIN TYPE POWER LED - The present invention relates to the heat-radiation structure of a pin-type power Light Emitting Diode (LED). The heat-radiation structure includes an LED device, first and second lead frames, a mold unit, and a heat sink. The first lead frame is electrically connected to the LED device, and extended forward to the outside in order to supply power to the LED device. The second lead frame is provided to face the first lead frame, and extended forward to the outside. The mold unit includes the LED device, and molds the upper portions of the first and second lead frames out transparent material. The heat sink is provided at a bottom of the mold unit so that the lead frames penetrate therethrough, fixed into any of the two lead frames, and configured to receive heat from the lead frame which comes into contact therewith and to radiate the heat to the outside.04-14-2011
20090206357Semiconductor Light Emitting Device - There is provided a nitride semiconductor light emitting device in which a semiconductor layer is not broken easily even when a reverse voltage is applied or even in long time operation, and excellent reliability is obtained, by preventing semiconductor layers from deterioration when manufacturing a device. On a surface of a substrate (08-20-2009
20120199871LIGHT-EMITTING DEVICE AND ELECTRONIC APPARATUS - A light-emitting device includes a power feeding line to which a predetermined voltage is supplied; a light-emitting element formed of a first electrode, a second electrode, and a light-emitting layer interposed between the first electrode and the second electrode; and a driving transistor that controls the amount of current supplied to the light-emitting element from the power feeding line. The power feeding line includes a portion interposed between the first electrode and the driving transistor.08-09-2012
20120199868SEMICONDUCTOR LIGHT EMITTING ELEMENT - The present invention provides a semiconductor light emitting element having; a semiconductor layer where an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer are laminated; an n-side electrode connected to the n-type semiconductor layer; and a p-side electrode connected to the p-type semiconductor layer; when the semiconductor light emitting element is viewed from above, the n-side electrode has a n-side pad electrode and n-side extension, the n-side extension comprises an n-side first extension extending from the n-side pad electrode toward the p-side pad electrode and an n-side second extension extending from the n-side first extension and formed T shape with the n-side first extension, the p-side electrode has a p-side pad electrode and a p-side extension formed so as to surround the n-side electrode, the p-side side extension comprises an p-side first extension extending from the p-side pad electrode parallel to the n-side second extension.08-09-2012
20110089465SEMICONDUCTOR CHIP ASSEMBLY WITH POST/BASE HEAT SPREADER WITH ESD PROTECTION LAYER - A semiconductor chip assembly includes a semiconductor device, a heat spreader, a conductive trace and an adhesive. The heat spreader includes a post, a base, an ESD protection layer and an underlayer. The conductive trace includes a pad and a terminal. The semiconductor device is electrically connected to the conductive trace, electrically isolated from the underlayer and thermally connected to the heat spreader. The post extends upwardly from the base into an opening in the adhesive, the base extends laterally from the post and the ESD protection layer is sandwiched between the base and the underlayer. The conductive trace provides signal routing between the pad and the terminal.04-21-2011
20110254045LIGHT EMITTING DIODE PACKAGE AND LIGHT EMITTING DIODE SYSTEM HAVING AT LEAST TWO HEAT SINKS - There is provided a light emitting diode package having at least two heat sinks. The light emitting diode package includes a main body, at least two lead terminals fixed to the main body, and at least two heat sinks of electrically and thermally conductive materials, the heat sinks being fixed to the main body. The at least two heat sinks are separated from each other. Thus, high luminous power can be obtained mounting a plurality of light emitting diode dies in one LED package. Further, it is possible to embody polychromatic lights mounting LED dies emitting different wavelengths of light each other in the LED package.10-20-2011
20110133243LIGHT EMITTING ELEMENT AND A PRODUCTION METHOD THEREFOR - Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a growth substrate, a first conductive semiconductor layer on the growth substrate, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, and an ohmic contact layer having a concavo-convex structure on the second conductive semiconductor layer.06-09-2011
20110163346LIGHT EMITTING DIODE HAVING ELECTRODE PADS - Exemplary embodiments of the present invention relate to a including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.07-07-2011
20110169043LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM - Provided are a light emitting device, a method of manufacturing the light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises a light emitting structure layer including a first conductive type semiconductor layer, a second conductive type semiconductor layer, an active layer between the first conductive type semiconductor layer and the second conductive type layer. At least one lateral surface of the light emitting structure layer has cleavage planes of an A-plane and an M-plane.07-14-2011
20100117114SEMICONDUCTOR LIGHT-EMITTING APPARATUS AND METHOD OF FABRICATING THE SAME - A light-emitting apparatus has a light-emitting device and a supporting board. The light-emitting device has a pair of n-electrodes with a p-electrode therebetween, on the same plane. The supporting board includes an insulating substrate on which positive and negative electrodes are formed, opposing to the p- and n-electrodes of the light-emitting device, respectively. Bonding members bond the p- and n-electrodes with the positive and negative electrodes, respectively. The positive electrode on the supporting board is formed within the width region of the p-electrode and narrower in width than the width of the p-electrode, in a cross-section along a line extending through the pair of n-electrodes. The negative electrodes oppose to the n-electrodes, respectively, with the same widths, or with that side face of each of the negative electrodes which faces the positive electrode being retracted outwardly from that side face of each of the n-electrodes which faces the p-electrode.05-13-2010
20110133244LIGHT EMITTING ELEMENT - A heat radiation structure of a light emitting element has leads, each lead having a plurality of leg sections, and a light emitting chip mounted on any one of the leads. The present invention can provide a high-efficiency light emitting element, in which a thermal load is reduced by widening a connecting section through which a lead and a chip seating section of the light emitting element are connected, and the heat generated from a heat source can be more rapidly radiated to the outside. Further, the present invention can also provide a high-efficiency light emitting element, in which heat radiation fins are formed between a stopper and a molding portion of a lead of the light emitting element so that natural convection can occur between the heat radiation fins, and an area in which heat radiation can occur is widened to maximize a heat radiation effect.06-09-2011
20110079815ORGANIC ELECTROLUMINESCENCE DEVICE AND MANUFACTURING METHOD THEREOF - According to one embodiment, an organic EL device includes an insulating substrate, a pixel electrode disposed above the insulating substrate, an organic layer disposed on the pixel electrode, a counter-electrode disposed on the organic layer, at least one of a first recess portion in which the organic layer and the counter-electrode are missing on the pixel electrode, and a second recess portion in which the counter-electrode is missing on the organic layer, and a protection film covering the counter-electrode and the at least one of the first recess portion and the second recess portion.04-07-2011
20110079814LIGHT EMITTED DIODE SUBSTRATE AND METHOD FOR PRODUCING THE SAME - A method for producing the LED substrate has steps of: p providing a conductive metallic board, forming multiple grooves in a top of the conductive metallic board; protecting the conductive metallic board from corrosion, forming an etched substrate with circuits and wires for plating on the conductive metallic board, electroless plating the etched substrate to form an electroless plated substrate, plating metal on the electroless plated substrate, and coating solder mask to obtain the LED substrate. Because LED chips are mounted on the surfaces of the metal layer without insulating adhesive below, heat from LED chips can be dissipated efficiently. The LED substrate of the present invention can be soldered directly onto a dissipation module to further enhance dissipation efficiency.04-07-2011
20110084306SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device and corresponding method of manufacture, where the semiconductor light emitting device includes a light emitting structure, a second electrode layer, an insulating layer, and a protrusion. The light emitting structure comprises a second conductive semiconductor layer, an active layer under the second conductive semiconductor layer, and a first conductive semiconductor layer under the active layer. The second electrode layer is formed on the light emitting structure. The insulating layer is formed along the circumference of the top surface of the light emitting structure. The protrusion protrudes from the undersurface of the insulating layer to the upper part of the first conductive semiconductor layer.04-14-2011
20110260208Light-Emitting Device and Manufacturing Method Thereof - A first conductive film, a first insulating film, a semiconductor film, an impurity semiconductor film, and a second conductive film are stacked in this order (a thin-film stacked body); first etching is performed to expose the first conductive film and form at least a pattern of the thin-film stacked body; second etching is performed to form a pattern of the first conductive film. The second etching is performed under a condition in which the first conductive film is side-etched. Further, after forming the patterns, an EL layer can be formed selectively by utilizing a depression and a projection due to the patterns.10-27-2011
20110260207SEMICONDUCTOR LIGHT EMITTING DEVICE - According to an embodiment of the present invention, a semiconductor light emitting device includes a light emitting structure including a plurality of compound semiconductor layers, an electrode layer disposed under the light emitting structure, an electrode disposed on the light emitting structure, a conductive support member disposed under the electrode layer, a conductive layer disposed between the light emitting structure and the conductive support member, and an insulating layer disposed between the conductive support member and the light emitting structure, wherein the electrode layer is in contact with a first area of a lower surface of the light emitting structure and the conductive layer is in contact with a second area of the lower surface of the light emitting structure, and wherein the conductive layer includes a different material from the electrode layer.10-27-2011
20110260205RADIATION-EMITTING SEMICONDUCTOR CHIP - A radiation-emitting semiconductor chip includes a carrier and a semiconductor body having a semiconductor layer sequence, wherein an emission region and a protective diode region are formed in the semiconductor body having the semiconductor layer sequence; the semiconductor layer sequence includes an active region that generates radiation, the active region being arranged between a first semiconductor layer and a second semiconductor layer; the first semiconductor layer is arranged on a side of the active region which faces away from the carrier; the emission region has a recess extending through the active region; the first semiconductor layer in the emission region is electrically conductively connected to a first connection layer, wherein the first connection layer extends in the recess from the first semiconductor layer toward the carrier; and the first connection layer in the protective diode region is electrically conductively connected to the second semiconductor layer.10-27-2011
20110260204ELECTRO-OPTICAL DEVICE, METHOD FOR MANUFACTURING ELECTRO-OPTICAL DEVICE, AND ELECTRONIC DEVICE - An electro-optical device includes: a pixel region that is formed on a substrate and in which a light emitting element that has a first electrode, a second electrode and a light emitting layer formed between the first electrode and the second electrode is arranged; a partition wall portion that is formed above the substrate and located on an outer side of the pixel region; a connecting line that is formed above the substrate and located on an outer side of the partition wall portion; and a connecting section that is formed above the substrate and electrically connects the second electrode to the connecting line, wherein the second electrode covers and extends over the pixel region and the partition wall portion and does not overlap the connecting line in a planar view.10-27-2011
20110260199SOLID STATE LIGHT EMITTING DIODE PACKAGES WITH LEADFRAMES AND CERAMIC MATERIAL AND METHODS OF FORMING THE SAME - Solid state light emitting diode packages can be provided including a ceramic material and a leadframe structure, on the ceramic material, the leadframe structure including a portion thereof that integrates the leadframe structure with the ceramic material.10-27-2011
20100059783Light Emitting Chip Package With Metal Leads For Enhanced Heat Dissipation - A light emitting chip package includes a planar substrate, an LED die mounted on the substrate, and one or more relatively wide and thick metal leads to serve as a low thermal resistance path. The substrate comprises a chip mounting area and a wire bond area on a dielectric body. The LED die is seated on the chip mounting area and electrically connected to the wire bonding area. The metal leads are attached to the substrate and form terminals for external connection. At least one metal lead is connected to the chip mounting area to serve as a low thermal resistance path between the chip mounting area and an external heat sink.03-11-2010
20080217643Light-emitting diode and heat radiating unit therefor - A light-emitting diode (LED) is mounted on a heat radiating unit therefor. The LED includes a metal carrier having two through holes, and a light-emitting chip packaged on the metal carrier and having a positive and a negative pin fixed to and insulated from the through holes by sintered glass. The heat radiating unit includes a seat and a hold-down plate closed onto a top of the seat. The seat is formed with a plurality of cavities and provided at an underside with a plurality of radiating fins; the hold-down plate is formed with a plurality of openings corresponding to the cavities on the seat. The LED is mounted in the cavity to expose to external space via the openings on the hold-down plate. Heat produced by the LED during working is transferred via the metal carrier to the heat radiating unit and radiated quickly.09-11-2008
20080217644Containment Structure and Method - Containment structures for an organic composition, comprising a first zone having a first surface energy, and a second zone having a second surface energy different than the first surface energy, and methods for making the same.09-11-2008
20080217642LIGHT EMITTING DIODE WITH A STEP SECTION BETWEEN THE BASE AND THE LENS OF THE DIODE - [Problem to be Solved]It is to be made easy to arrange light emitting diodes, each including a lens having a hemispherical light emitting surface, and cover the base of the light emitting diodes with resin material. 09-11-2008
20110260203LIGHT EMITTING DIODE STRUCTURE AND FABRICATION METHOD THEREOF - A light emitting diode structure including a light emitting device layer, a patterned dielectric layer, a first ohmic contact layer, a conductive layer, a first electrode layer and a second electrode layer is provided. The light emitting device layer has a first surface and a second surface opposite to the first surface. The patterned dielectric layer disposed on the first surface has a plurality of openings exposing a portion of the light emitting device layer. The first ohmic contact layer is disposed on the patterned dielectric layer and connected with the first light emitting device layer through the openings. The conductive layer is disposed on the first ohmic contact layer. The first electrode layer is disposed on the conductive layer, and the conductive layer is located between the first ohmic contact layer and the second electrode layer. A fabrication method of the light emitting diode structure is also provided.10-27-2011
20110260201Radiation-Emitting Device and Method for Producing a Radiation-Emitting Device - A radiation-emitting device is provided which comprises a substrate (10-27-2011
20110186904Radiation-Emitting Semiconductor Body with Carrier Substrate and Method for the Production thereof - A radiation-emitting semiconductor body with a carrier substrate. A structured connection is produced between a semiconductor layer sequence (08-04-2011
20110186903LIGHT-EMITTING DEVICE WITH IMPROVED BRIGHTNESS CONTROL AND NARROW FRAME AND ELECTRONIC APPARATUS WITH THE LIGHT-EMITTING DEVICE - The invention provides a light-emitting device and an electronic apparatus, which are capable of preventing reduction of the amount of current flowing through light-emitting elements and which have an excellent display characteristic. Cathode wiring lines connected to a cathode are provided to surround an effective area outside the effective area where a plurality of pixels having light-emitting elements are provided. First to third power source lines connected to pixel electrodes are provided between the cathode wiring lines and the effective area.08-04-2011
20110186902LED PACKAGE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, an LED package includes first and second lead frames, an LED chip and a resin body. The first and second lead frames are apart from each other. The LED chip is provided above the first and second lead frames, the LED chip includes a semiconductor layer which contains at least indium, gallium and aluminum, one terminal of the LED chip is connected to the first lead frame, and another terminal of the LED chip is connected to the second lead frame. The resin body covers the LED chip and an entire upper surface, a part of a lower surface, and parts of edge surfaces of each of the first and second lead frames, and the resin body exposes a rest of the lower surface and a rest of the edge surfaces. And, an appearance of the resin body is a part of an appearance of the LED package.08-04-2011
20110186901LED PACKAGE - According to one embodiment, an LED package includes a first lead frame, a second lead frame, an LED chip, a wire, and a resin body. The first lead frame and the second lead frame are arranged with a space between each other. The LED chip is provided above the first lead frame and the second lead frame. The LED chip has a first terminal connected to the first lead frame and a second terminal connected to the second lead frame. The wire connects the first terminal to the first lead frame. The resin body covers the LED chip as well as a top surface, a part of a bottom surface, and a part of an edge surface of each of the first lead frame and the second lead frame. A remaining portion of each of the bottom surfaces and a remaining portion of each of the edge surfaces are exposed. A chip side angle formed by a top surface of the LED chip and a direction in which the wire is extracted from the first terminal is smaller than a frame side angle formed by the top surface of the first lead frame and a direction in which the wire is extracted from the first lead frame.08-04-2011
20110186900LED PACKAGE, METHOD FOR MANUFACTURING LED PACKAGE, AND PACKING MEMBER FOR LED PACKAGE - According to one embodiment, an LED package includes first and second lead frames, an LED chip and a resin body. The first and second lead frames are apart from each other. The LED chip is provided above the first and second lead frames, and the LED chip has one terminal connected to the first lead frame and another terminal connected to the second lead frame. In addition, the resin body covers the first and second lead frames and the LED chip, and has an upper surface with a surface roughness of 0.15 μm or higher and a side surface with a surface roughness higher than the surface roughness of the upper surface.08-04-2011
20110186899SEMICONDUCTOR DEVICE WITH A VARIABLE INTEGRATED CIRCUIT CHIP BUMP PITCH - A semiconductor device is described that comprises an integrated circuit substrate comprising a plurality of bonding pads for enabling electrical connectivity to a chip circuit. The bonding pads are at least partially covered by a passivation layer having pre-manufactured holes. The device also includes a chip having a plurality of bumps atop the bonding pads, wherein areas of the bumps are larger than respective areas of cooperating holes in the passivation layer.08-04-2011
20110278630COATING AGENT, SUBSTRATE FOR MOUNTING OPTICAL SEMICONDUCTOR ELEMENT USING SAME, AND OPTICAL SEMICONDUCTOR DEVICE - The coating agent of the invention is a coating agent to be used between conductor members, comprising a thermosetting resin, a white pigment, a curing agent and a curing catalyst, the coating agent to be used between conductor members having a white pigment content of 10-85 vol % based on the total solid volume of the coating agent, and a whiteness of at least 75 when the cured product of the coating agent has been allowed to stand at 200° C. for 24 hours.11-17-2011
20100025720PACKAGING STRUCTURE AND METHOD FOR LIGHT-EMITTING DIODE - The present invention discloses a packaging structure for light-emitting diode, which comprises a grain to provide electroluminescence; a solder paste layer disposed on the bottom and perimeter of the grain to connect the grain with at least one support; and a heat-conducting layer disposed at the bottom of the grain to work as a heat-dissipating path for the grain, so that the aforementioned structure may significantly reduce the packaging thermal resistance of light-emitting diode. Further, the present invention also discloses a packaging method for light-emitting diode, which is capable of greatly reducing the packaging thermal resistance of light-emitting diode.02-04-2010
20100025722LIGHT EMITTING DEVICE, ITS MANUFACTURING METHOD AND ITS MOUNTED SUBSTRATE - A light emitting device according to the invention includes: a package including a generally quadrangular light emitting surface with a recess formed therein, a rear surface opposed to the light emitting surface, a first side surface generally orthogonal to the light emitting surface and the rear surface, and a second side surface opposed to the first side surface; and a light emitting element provided in the recess. At least one of the first side surface and the rear surface include a first and second feeder electrode surfaces and a mounting surface provided between the first feeder electrode surface and the second feeder electrode surface. A step difference is provided between the first feeder electrode surface and the mounting surface, and a step difference is provided between the second feeder electrode surface and the mounting surface. The first and second feeder electrode surfaces are set back from the mounting surface adjacent thereto. This structure is possible to make a light emitting device high in brightness and thin in thickness.02-04-2010
20100025721OPTICAL SEMICONDUCTOR DEVICE MODULE HAVING LEAF SPRINGS WITH DIFFERENT RECTANGULARLY-SHAPED TERMINALS - In an optical semiconductor device module constructed by an optical semiconductor device having a light emitting portion on its top surface, a mounting substrate adapted to mount the optical semiconductor device thereon, and at least one conductive leaf spring adapted to fix the optical semiconductor device to the mounting substrate and supply power to the optical semiconductor device, the leaf spring is formed by a plurality of rectangularly-shaped terminals, and natural frequencies of at least two of the rectangularly-shaped terminals are different from each other.02-04-2010
20100025718Top contact LED thermal management - An LED having enhanced heat dissipation is disclosed. For example, an LED die can have extended bond pads that are configured to enhance heat flow from an active region of the LED to a lead frame. A heat transmissive substrate can further enhance heat flow away from the LED die. By enhancing heat dissipation, more current can be used to drive the LED. The use of more current facilitates the production of brighter LEDs.02-04-2010
20110215361Thermally-Enhanced Hybrid LED Package Components - A light-emitting device (LED) package component includes an LED chip and a carrier chip. The carrier chip includes a first bond pad and a second bond pad on a surface of the carrier chip and bonded onto the LED chip through flip-chip bonding, and a third bond pad and a fourth bond pad on the surface of the carrier chip and electrically connected to the first bond pad and the second bond pad, respectively. The first bond pad and the second bond pad are on a same side of the carrier chip facing the LED chip. The carrier chip further includes at least one through substrate via (TSV) connected to the first and second bond pads.09-08-2011
20110215368LIGHT-EMITTING DIODE WITH WIRE-PIERCING LEAD FRAME - A wire-piercing light-emitting diode (LED) a lead frame having a first lead and a second lead. The first lead has a first transition portion and a first bottom portion with a first cutting member, and the second lead having a second transition portion and a second bottom portion with a second cutting member.09-08-2011
20110215367ORGANIC ELECTROLUMINESCENCE ELEMENT AND LIGHT-EMITTING APPARATUS HAVING THE SAME - An organic EL element has a substrate, a first electrode, an organic compound layer, and a second electrode. The second electrode has a base layer and a metal layer, and light generated in this organic EL element is transmitted through the second electrode. The base layer is closer to the substrate than the metal layer and is a mixed layer containing lithium, oxygen, and magnesium, whereas the metal layer contains silver and has a thickness in the range of 5.0 to 20 nm, inclusive.09-08-2011
20110215366Light emitting device - A light emitting device (09-08-2011
20110215365SEMICONDUCTOR PACKAGE AND FABRICATION METHOD THEREOF - A light emitting element package includes a package substrate, at least one light emitting element, a first encapsulation layer and a second encapsulation layer. The at least one light emitting element is mounted on the package substrate. The first encapsulation layer is mounted on the package substrate for encapsulation the at least one light emitting element. The second encapsulation layer is configured for encapsulation a back side of the at least one light emitting element.09-08-2011
20110215364SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor light emitting element includes a conductive substrate, a bonding portion, an intermediate metal film, a first electrode, a semiconductor stacked body and a second electrode. The bonding portion is provided on the support substrate and including a first metal film. The intermediate metal film is provided on the bonding portion and having a larger linear expansion coefficient than the first metal film. The first electrode is provided on the intermediate metal film and includes a second metal film having a larger linear expansion coefficient than the intermediate metal film. The semiconductor stacked body is provided on the first electrode and including a light emitting portion. The second electrode is provided on the semiconductor stacked body.09-08-2011
20110215363SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a stacked structural body, a first electrode, and a second electrode. The stacked structural body includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting portion. The stacked structural body has a first major surface on a side of the second semiconductor layer. The first electrode is provided on the first semiconductor. The second electrode is provided on the second semiconductor layer. The first electrode includes a first pad portion and a first extending portion that extends from the first pad portion along a first extending direction. The first extending portion includes a first width-increasing portion. A width of the first width-increasing portion along a direction orthogonal to the first extending direction is increased from the first pad portion toward an end of the first extending portion.09-08-2011
20110215362ILLUMINATION DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, an illumination device includes an anode, a metal layer, a cathode, an organic electroluminescent unit, first and second insulating layers, and a plurality of conductive piercing layers. The metal layer has an electrical resistance lower than that of the anode. The cathode is provided between the anode and the metal layer. The organic electroluminescent unit is provided between the anode and the cathode. The first insulating layer is provided between the cathode and the metal layer. The conductive piercing layers pierce the organic electroluminescent unit, the cathode, and the first insulating layer along a direction from the anode toward the metal layer to electrically connect the anode to the metal layer, and are separate entities from the metal layer. The second insulating layer is provided between the organic electroluminescent unit and the conductive piercing layers and between the cathode and the conductive piercing layers.09-08-2011
20110215359LIGHT EMITTING DEVICE - A light emitting device is provided. A light emitting device comprises a substrate, a first lead frame and a second lead frame on the substrate, an installation portion electrically connected to the first lead frame or the second lead frame, the installation portion being thinner than the first lead frame or the second lead frames, a light emitting diode on the installation portion, and a conductive member electrically connecting at least one of the lead frames to the light emitting diode.09-08-2011
20100181593LED chip package - A LED chip package including a two-phase-flow heat transfer device, at least one LED chip, a metal lead frame and a package material. The two-phase-flow heat transfer device has at least one flat surface. The LED chip is directly or indirectly bonded or adhered to the flat surface of the two-phase-flow heat transfer device. Heat generated by the LED chip can be easily conducted away from the LED chip by the two-phase-flow heat transfer device such as a heat pipe, a vapor chamber and the like so as to prevent heat from accumulating in the LED chip thereby extending the service duration of the LED chip and to prevent the LED chip from deterioration of the light emitting performance caused by the accumulation of heat.07-22-2010
20100019270LIGHT EMITTING DEVICE AND DISPLAY - A light emitting diode having a mount lead having a cup and a lead, an LED chip mounted in the cup of said mount lead with one of electrodes being electrically connected to said mount lead, a coating material filling the cup of said mount lead to cover said LED chip; a molding material covering said LED chip, said coating material and the cup of said mount lead, and a phosphor absorbing a part of light emitted by said LED chip and emitting light of wavelength different from that of the absorbed light, wherein said phosphor is located in said coating material, and wherein said molding material is shaped to form a concave lens.01-28-2010
20100019269LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A light-emitting device and method of manufacturing the same provides a substrate, a semiconductor layer formed on the substrate and configured to generate light, and a transparent electrode layer formed on the semiconductor layer and configured to transmit the light generated from the semiconductor layer. The amount of a material of which the transparent electrode layer is made decreases gradually as it goes from the bottom to the top.01-28-2010
20100019268Optoelectronic Semiconductor Chip - An optoelectronic semiconductor chip (01-28-2010
20120146084LIGHT-EMITTING DIODE PACKAGE STRUCTURE - The present invention discloses a light-emitting diode (LED) package structure, which includes a housing, a first electrode plate, a second electrode plate, a light-emitting diode, and a voltage regulation diode. The housing has a top surface forming a cavity, and the cavity contains therein a wall that divides the cavity into a light emission section and a voltage regulation section. By separately arranging the light-emitting diode and the voltage regulation diode in two different sections of the light emission section and the voltage regulation section, the present invention prevents the voltage regulation diode from affecting light flux of the light-emitting diode by absorbing light, thereby enhancing overall lighting performance of the LED package structure.06-14-2012
20120146086SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device having an n-electrode and a p-electrode provided on the same surface side of a semiconductor film, wherein current spread in the semiconductor film is promoted, so that the improvements in luminous efficiency and reliability, the emission intensity uniformalization across the surface, and a reduction in the forward voltage, can be achieved. The semiconductor light emitting device includes a semiconductor film including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer; the n-electrode formed on an exposed surface of the n-type semiconductor layer exposed by removing parts of the p-type semiconductor layer, of the active layer, and of the n-type semiconductor layer with accessing from the surface side of the p-type semiconductor layer; and the p-electrode. A current guide portion having conductivity higher than that of the n-type semiconductor layer is provided on or in the n-type semiconductor layer over the p-type electrode.06-14-2012
20090309121Light emitting apparatus - In a light-emitting apparatus using a silicone resin as a sealant of its light-emitting element, it is intended to prevent discoloration of its lead frame. A light-emitting element fixed to a lead frame is sealed with a sealed portion formed by a silicone resin. An average spin-spin relaxation time of the silicone resin is equal to or smaller than 100 microseconds at 25° C. at a resonance frequency of 25 MHz.12-17-2009
20090173962SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, AND LAMP INCLUDING THE SAME - A semiconductor light-emitting device having a high light emission property and preventing an electrode from being peeled off during wire bonding. Also disclosed is a method of manufacturing a semiconductor light-emitting device 07-09-2009
20090173963Light-emitting device - The present invention is related to a light-emitting device. The present invention illustrates a vertical light-emitting device in one embodiment, comprising the following elements: a conductive substrate includes a through-hole, a patterned semiconductor structure disposed on a first surface of the substrate, a first bonding pad and a second bonding pad disposed on a second surface of the substrate, a conductive line passing through the through-hole connecting electrically the semiconductor structure layer, and an insulation layer on at least one sidewall of the through-hole insulates the conductive line form the substrate. The present invention illustrates a horizontal light-emitting device in another embodiment, comprising the following elements: a substrate includes a first tilted sidewall, a patterned semiconductor structure disposed on a first surface of the substrate, a first conductive line is disposed on at least the first tilted sidewall of the substrate and connecting electrically the patterned semiconductor structure.07-09-2009
20090173961Led Semiconductor Body and Use of an Led Semiconductor body - An LED semiconductor body comprising a first radiation-generating active layer and a second radiation-generating active layer, the first active layer and the second active layer being arranged one above another in the vertical direction.07-09-2009
20120037948ORGANIC LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - An exemplary embodiment of the present invention provides an organic light emitting diode, comprising a substrate, a first electrode, an organic material layer, and a second electrode, wherein a trench comprising a concave part and a convex part is provided on the substrate, the first electrode is provided on the substrate on which the trench is formed by being deposited, and an auxiliary electrode is provided on the first electrode. The organic light emitting diode according to the exemplary embodiment of the present invention may increase surface areas of the first electrode and the auxiliary electrode formed on the substrate, thereby implementing a low resistance electrode. In addition, since a line width of the electrode is not increased, it is possible to prevent a decrease of an opening ratio of the organic light emitting diode.02-16-2012
20120098021LED PACKAGE - An LED package includes a substrate, an LED chip and an encapsulation. The substrate includes a main plate, and a first soldering pad and a second soldering pad attached to the main plate. The first soldering pad and the second soldering pad are separated from each other. The LED chip includes a first electrode and a second electrode. The LED chip is mounted on the substrate with the second electrode electrically connected to the second soldering pad of the substrate. The encapsulation includes a main body enclosing the LED chip and an electric connecting unit electrically connecting the first electrode of the LED chip and the first soldering pad.04-26-2012
20110147788SEMICONDUCTOR DEVICE WITH A LIGHT EMITTING SEMICONDUCTOR DIE - A semiconductor device includes a light emitting semiconductor die mounted on at least one of first and second electrically conductive bonding pads, which are located on a first major surface of a substrate of the device. The light emitting semiconductor die has an anode and a cathode, which are electrically connected to the first and second electrically conductive bonding pads. The semiconductor device further includes first and second electrically conductive connecting pads, which are located on a second major surface of the substrate. The first and second electrically conductive bonding pads are electrically connected to the first and second electrically conductive connecting pads via first and second electrically conductive edge interconnecting elements.06-23-2011
20120032225SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR PRODUCING THE SAME - The object of the invention is to improve the visual inspection yield of a semiconductor light emitting device. To achieve the object, a semiconductor light emitting device includes a semiconductor layer, a pad electrode on the layer, and a protection film covering at least the layer. The device includes at least one stopper arranged on a peripheral part of the pad electrode surface away from the film. The stopper has a semicircular arc shape opening toward the center of the pad electrode. In electrical/optical property inspection, if sliding on the pad electrode, a probe needle can be guided into the concave surface of the semicircular arc shape. The stopper can reliably hold the needle. It is avoidable that the needle contacts the film. It is preferable that each of positive/negative electrodes have the pad electrode, and a pair of stoppers be arranged in positions on the electrodes facing each other.02-09-2012
20130200424COMPOUND SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME - According to the present invention, a method for manufacturing a compound semiconductor comprises: forming a graphene-derived material layer on either a first selected substrate or a first selected compound semiconductor layer; forming a second compound semiconductor layer of at least one layer on at least said graphene-derived material layer, and changing the graphene-derived material layer so as to separate said second compound semiconductor layer of at least one layer.08-08-2013
20120305980LED LAMPS - A high power LED lamp has a GaN chip placed over an AlGaInP chip. A reflector is placed between the two chips. Each of the chips has trenches diverting light for output. The chip pair can be arranged to produce white light having a spectral distribution in the red to blue region that is close to that of daylight. Also, the chip pair can be used to provide an RGB lamp or a red-amber-green traffic lamp. The active regions of both chips can be less than 50 microns away from a heat sink.12-06-2012
20120305978LED LAMPS - A high power LED lamp has a GaN chip placed over an AlGaInP chip. A reflector is placed between the two chips. Each of the chips has trenches diverting light for output. The chip pair can be arranged to produce white light having a spectral distribution in the red to blue region that is close to that of daylight. Also, the chip pair can be used to provide an RGB lamp or a red-amber-green traffic lamp. The active regions of both chips can be less than 50 microns away from a heat sink.12-06-2012
20120305979LIGHT-EMITTING DIODE, METHOD FOR MANUFACTURING THE SAME, AND LIGHT-EMITTING DIODE LAMP - The present invention provides a light-emitting diode that includes two electrodes provided on a light-emitting surface, and exhibits high light extraction efficiency and high-brightness. The present invention relates to a light-emitting diode (12-06-2012
20120305976LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM INCLUDING THE SAME - A light emitting device package is disclosed. The light emitting device package includes a body, first and second lead frames disposed on the body, and a light emitting device connected to the first and second lead frames, wherein at least one of the first and second lead frames includes first and second regions having different thicknesses.12-06-2012
20120305977INTERPOSER AND MANUFACTURING METHOD THEREOF - An embodiment of the present invention provides a manufacturing method of an interposer including: providing a semiconductor substrate having a first surface, a second surface and at least a through hole connecting the first surface to the second surface; electrocoating a polymer layer on the first surface, the second surface and an inner wall of the through hole; and forming a wiring layer on the electrocoating polymer layer, wherein the wiring layer extends from the first surface to the second surface via the inner wall of the through hole. Another embodiment of the present invention provides an interposer.12-06-2012
20090212317CIRCUIT BOARD FOR DIRECT FLIP CHIP ATTACHMENT - A packaging method comprises: forming a circuit board by forming a substantially continuous conductive layer on an insulating board and removing selected portions of the continuous conductive layer to define an electrically conductive trace; laser cutting the electrically conductive trace to define sub-traces electrically isolated from each other by a laser-cut gap formed by the laser cutting; and bonding a light emitting diode (LED) chip to the circuit board across or adjacent to the laser-cut gap, the bonding including operatively electrically connecting an electrode of the LED chip to one of the sub-traces without using an interposed submount. A semiconductor package comprises an LED chip flip-chip bonded to sub-traces of an electrically conductive trace of a circuit board, the sub-traces being electrically isolated from each other by a narrow gap of less than or about 100 microns.08-27-2009
20090321776Multi-chip package for LED chip and multi-chip package LED device including the multi-chip package - Provided is a multi-chip package light emitting diode (LED) device including a plurality of LED chips within a single package. The LED device may include a base substrate, a multi-chip package for a LED on the base substrate, and a light radiator surrounding the multi-chip package and radiating light emitted by the multi-chip package for a LED, wherein the multi-chip package for a LED may include a plurality of LED chips on a single wafer substrate.12-31-2009
20120146085DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A display substrate includes a substrate, a pixel part, a pad part and a sacrificial electrode. The substrate includes a display area and a peripheral area. The pixel part is on the display area and includes a switching element, and a pixel electrode electrically connected to the switching element. The pad part is on the peripheral area and contacts a terminal of an external device. The pad part includes a pad electrode a contact electrode. The pad electrode includes a first metal layer, and a second metal layer on the first metal layer, and the contact electrode contacts the second metal layer. The sacrificial electrode is spaced apart from the pad electrode and contacts the contact electrode. An exposed portion of the sacrificial electrode is exposed to an external side of the display substrate.06-14-2012
20120146087LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A light-emitting device is disclosed. The light-emitting device comprises a substrate, an ion implanted layer on the substrate, a light-emitting stack layer disposed on the ion implanted layer, and an adhesive layer connecting the substrate with the light-emitting stack layer, wherein the adhesive layer comprises a thin silicon film disposed between the ion implanted layer and the light-emitting layer. This invention also discloses a method of manufacturing a light-emitting device comprising the steps of forming a light-emitting stack layer, forming a thin silicon film on the light-emitting stack layer, providing a substrate, forming an ion implanted layer on the substrate, and providing an electrode potential difference to form an oxide layer between the thin silicon film and the ion implanted layer.06-14-2012
20120037949LIGHT EMITTING DEVICE, METHOD FOR FABRICATING THE LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM - Provided is a light emitting device. The light emitting device includes a light emitting structure layer including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode electrically connected to the first conductive type semiconductor layer, an insulating support member under the light emitting structure layer, and a plurality of conductive layers between the light emitting structure layer and the insulating support member. At least one of the plurality of conductive layers has a width greater than that of the light emitting structure layer and includes a contact part disposed further outward from a sidewall of the light emitting structure layer.02-16-2012
20120037947LIGHT EMITTING DIODE PACKAGE AND MANUFACTURING METHOD THEREOF - A light emitting diode package comprises a substrate with a first surface and a second surface opposite to each other, a circuit on the substrate, a support on the substrate for reinforcing strength of the substrate, a plurality of light emitting diodes on the substrate and electrically connected to the circuit, and a cover layer on the plurality of light emitting diodes. A method for manufacturing a light-emitting diode package is further provided.02-16-2012
20100127299Actively Cooled LED Lighting System and Method for Making the Same - A lighting system can comprise one or more light emitting diodes (“LEDs”) that emit substantially white light and a thermoelectric cooler (“TEC”) for maintaining the LEDs within a temperature range. The TEC can comprise an electrical circuit that includes two different semiconductors or two dissimilar metals that provide cooling when electrically energized. The electrical circuit can adjoin or touch one side of a plate, sheet, wafer, or substrate of material, such as ceramic, that insulates electricity and conducts heat. In operation, the electrical circuit can cool the plate or actively transfer heat from the plate. The LEDs can adjoin or touch the side of the plate that is opposite the electrical circuit. Thus, a TEC circuit can contact one surface of a thin piece of ceramic material, while an LED contacts the opposite surface.05-27-2010
20080283863TRANSPARENT ELECTRODE - In order to emit a light from an electrode side, in semiconductor light emitting devices such as LED and the like, and liquid crystal, the electrode is formed of a transparent material so as to transmit a light through the transparent electrode and exit the light. A ZnO, which constitutes a material for the transparent electrode, is subject to erosion by acid and alkali, thus, as the case may cause loss of a reliability of the electrode under the influence of ion-containing moisture. In order to solve such a problem, this invention has as its aim a transparent electrode film provided with stability capable of preventing any degradation under the influence of any ion-containing moisture, while being kept acid-proof and alkali-proof. In order to accomplish the above-mentioned aim, this invention provides a transparent electrode made up of a ZnO as its main material, wherein its surface is covered with a Mg-doped ZnO film.11-20-2008
20110316039VERTICAL LED WITH CURRENT GUIDING STRUCTURE - Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a metal alloy substrate) may be provided. For some embodiments, both a current guiding structure and second current path may be provided.12-29-2011
20110316036LIGHT EMITTING DEVICE AND SEMICONDUCTOR WAFER - According to one embodiment, a light emitting device includes a substrate, a bonding layer, a plurality of protrusions, a first electrode, a translucent resin layer, and a first overcoat electrode. The bonding layer is provided on the substrate. The plurality of protrusions is provided on the bonding layer and includes a first conductivity type layer, a light emitting layer provided on the first conductivity type layer, and a second conductivity type layer provided on the light emitting layer. The first electrode is provided on the second conductivity type layer. The translucent resin layer is provided around the protrusions. The first overcoat electrode is provided on the translucent resin layer and connects the first electrodes respectively provided on the plurality of protrusions. The substrate, the translucent resin layer, and the first overcoat electrode each are exposed at a side surface of the light emitting device.12-29-2011
20110316035HEAT DISSIPATING SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - Disclosed is a heat-dissipating substrate, which includes a base substrate including a metal layer, an insulating layer formed on one surface of the metal layer, and a circuit layer formed on the insulating layer, a heat sink layer formed on the other surface of the metal layer, a connector for connecting the base substrate and the heat sink layer to each other, an opening formed in a direction of thickness of the base substrate and into which the connector is inserted, and an anodized layer formed on either or both of the other surface and a lateral surface of the metal layer, and in which the metal layer and the heat sink layer are insulated from each other by means of the anodized layer, thus preventing transfer of static electricity or voltage shock to the metal layer. A method of manufacturing the heat-dissipating substrate is also provided.12-29-2011
20110316034Side By Side Light Emitting Diode (LED) Having Separate Electrical And Heat Transfer Paths And Method Of Fabrication - A light emitting diode includes a thermal conductive substrate having at least one electrical isolation layer configured to provide vertical electrical isolation and a heat transfer path through the substrate from a front side (first side) to a back side (second side) thereof. The light emitting diode includes an anode having a through interconnect, and a cathode having a through interconnect, which are arranged side by side on the substrate. The light emitting diode also includes a LED chip mounted to the substrate between the anode and the cathode. A method for fabricating the light emitting diode includes the steps of providing a thermal conductive substrate having an electrical isolation layer, forming an anode via and a cathode via side by side on a first side of the substrate part way through the substrate, forming an anode through interconnect in the anode via and a cathode through interconnect in the cathode via, thinning the substrate from a second side of the substrate to the anode through interconnect and the cathode through interconnect, and mounting a LED chip to the first side in electrical communication with the cathode through interconnect and the anode through interconnect.12-29-2011
20110316038SUBSTRATE COMPRISING ALUMINUM/GRAPHITE COMPOSITE, HEAT DISSIPATION PART COMPRISING SAME, AND LED LUMINESCENT MEMBER - A process for producing a substrate, which comprises processing an aluminum/graphite composite into plates having a thickness of 0.5-3 mm using a multi-wire saw under the following conditions (1) to (4): (1) the wires have abrasive grains bonded thereto which are one or more substances selected from diamond, C—BN, silicon carbide, and alumina and have an average particle diameter of 10-100 μm; (2) the wires have a diameter of 0.1-0.3 mm; (3) the wires are run at a rate of 100-700 m/min; and (4) the composite is cut at a rate of 0.1-2 mm/min. The aluminum/graphite composite has a surface roughness (Ra) of 0.1-3 μm, a thermal conductivity at 25° C. of 150-300 W/mK, a ratio of the maximum to the minimum value of thermal conductivity in three perpendicular directions of 1-1.3, a coefficient of thermal expansion at 25-150° C. of 4×1012-29-2011
20120007133LIGHT EMITTING DEVICE AND LIGHTING SYSTEM - A light emitting device includes: 01-12-2012
20120043576LED PACKAGE STRUCTURE - An LED package structure includes a substrate with a concave groove therein, an LED die received in the concave groove, a heat conductive pillar, two electrically conductive pillars, a heat conductive plate, and two contact pads. The heat conductive pillar extends through the substrate and thermally connects with the LED die and the heat conductive plate. The electrically conductive pillars extend through substrate and electrically connect with the LED die, respectively. The electrically conductive pillars and the heat conductive pillar are spaced from each other. The contact pads respectively and electrically connect with the electrically conductive pillars. The contact pads are spaced from each other.02-23-2012
20110101408LED DIE HAVING HEAT DISSIPATION LAYERS - An LED die includes a multi-layer semiconductor with a first surface, a second surface opposite to the first surface, an inclined plane connecting to the first surface and the second surface, a first electrode and a second electrode respectively positioned on the first surface and the second surface, a first heat dissipation layer made of electrically-insulating and thermally conductive material being coated on the first surface and the inclined plane with a first opening exposing the first electrode, and a second heat dissipation layer made of electrically and thermally conductive material being coated on the first heat dissipation layer and contacting and electrically connecting with the first electrode.05-05-2011
20120043580Semiconductor Device and Manufacturing Method Thereof - There are provided a structure of a semiconductor device in which low power consumption is realized even in a case where a size of a display region is increased to be a large size screen and a manufacturing method thereof. A gate electrode in a pixel portion is formed as a three layered structure of a material film containing mainly W, a material film containing mainly Al, and a material film containing mainly Ti to reduce a wiring resistance. A wiring is etched using an IPC etching apparatus. The gate electrode has a taper shape and the width of a region which becomes the taper shape is set to be 1 μm or more.02-23-2012
20120043579Light-Emitting Device - A light-emitting device having the quality of an image high in homogeneity is provided. A printed wiring board (second substrate) (02-23-2012
20120043578GaN-Based Light-Emitting Diode and Method for Manufacturing the Same - A GaN-based LED and a method for manufacturing the same are provided, and the method includes: providing a substrate, depositing a first transition layer on the substrate; forming a first patterned transition layer by etching with a mask; growing a first epitaxial layer on the first patterned transition layer; depositing a second transition layer on the first epitaxial layer; forming a second patterned transition layer by etching with a mask, such that the second patterned transition layer and the first patterned transition layer are cross-staggered with each other; growing a second epitaxial layer on the second patterned transition layer, wherein the second epitaxial layer includes a P-type layer, a light-emitting layer and an N-type layer; depositing a protection layer on the second epitaxial layer, dicing to obtain chips with a defined size; removing the first patterned transition layer and the second patterned transition layer on the substrate and the protection layer on the second epitaxial layer by wet etching, so as to form a structure with two layers of cross-staggered through holes; forming a conductive layer on the second epitaxial layer; and forming a P-electrode and an N-electrode by etching with a mask. The two layers of cross-staggered through holes of the LED chips can effectively reduce the dislocation density in the epitaxial growth of the GaN-based layer, and improve the lattice quality and luminous efficiency.02-23-2012
20120061713SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes: a stacked structure body, first and second electrodes, and a pad layer. The body includes first semiconductor layer of a first conductivity type, a light emitting layer, and a second semiconductor layer of second conductivity type. The first semiconductor layer has first and second portions. The light emitting layer is provided on the second portion. The second semiconductor layer is provided on the light emitting layer. The first electrode is provided on the first portion. The second electrode is provided on the second semiconductor layer and is transmittable to light emitted from the light emitting layer. The pad layer is connected to the second electrode. A transmittance of the pad layer is lower than that of the second electrode. A sheet resistance of the second electrode increases continuously along a direction from the pad layer toward the first electrode.03-15-2012
20120205710LED MODULE - A LED module includes a substrate, a LED chip supported on the substrate, a metal wiring installed on the substrate, the metal wiring including a mounting portion on which the LED chip is mounted, an encapsulating resin configured to cover the LED chip and the metal wiring, and a clad member configured to cover the metal wiring to expose the mounting portion, the encapsulating resin arranged to cover the clad member.08-16-2012
20120205711LIGHT EMITTING DEVICE - Disclosed are a light emitting device, a method of manufacturing the same, a light emitting device package, and a lighting system. The light emitting device includes the light emitting structure layer including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second conductive semiconductor layers, a conductive support substrate electrically connected to the second conductive semiconductor layer, a contact electrically connected to the first conductive semiconductor layer, a dielectric material making contact with the contact and interposed between the contact and the conductive support substrate, and an insulating layer electrically insulating the contact from the active layer, the second conductive semiconductor layer, and the conductive support substrate.08-16-2012
20120205707LIGHT-EMITTING DIODE PACKAGE - A light-emitting diode package includes: a frame unit, and at least one light-emitting diode chip including a chip body and a contact layer disposed between the chip body and the frame unit. One of the frame unit and the contact layer contains a magnetic material, and the other one of the frame unit and the contact layer contains a material capable of being magnetically attracted to the magnetic material.08-16-2012
20120001221LIGHT EMITTING DEVICE AND LIGHT UNIT - Provided are a light emitting device, a method of fabricating the light emitting device, and a light unit. The light emitting device includes a light emitting structure layer comprising a first conductive type semiconductor layer, an active layer under the first conductive type semiconductor layer, and a second conductive type semiconductor layer under the active layer, a first conductive layer under the second conductive type semiconductor layer and electrically connected to the first conductive type semiconductor layer, a second conductive layer under the second conductive type semiconductor layer and electrically connected to the second conductive type semiconductor layer, an insulation layer between the first conductive layer and the second conductive layer, and a tunnel barrier under the second conductive type semiconductor layer and disposed between the first conductive layer and the second conductive layer.01-05-2012
20120001222LIGHT EMITTING DEVICE, AND LIGHT EMITTING DEVICE PACKAGE - A light emitting device including a light emitting structure including a second conductive type semiconductor layer, an active layer, and a first conductive type semiconductor layer, and a first protective layer disposed on a side of the light emitting structure, wherein the first protective layer overlaps with the first conductive type semiconductor layer in a vertical direction.01-05-2012
20090278162Low Temperature Co-Fired Ceramic (LTCC) Tape Compositions, Light-Emitting Diode (LED) Modules, Lighting Devices and Methods of Forming Thereof - The present invention provides LTCC (low temperature co-fired ceramic) tape compositions and demonstrates the use of said LTCC tape(s) in the formation of Light-Emitting Diode (LED) chip carriers and modules for various lighting applications. The present invention also provides for the use of (LTCC) tape and LED modules in the formation of lighting devices including, but not limited to, LED devices, High Brightness (HB) LED backlights, display-related light sources, automotive lighting, decorative lighting, signage and advertisement lighting, and information display lighting.11-12-2009
20110156084ORGANIC LIGHT EMITTING DIODE LIGHTING APPARATUS - An organic light emitting diode lighting apparatus is disclosed. In one embodiment, the apparatus includes: i) a substrate main body including a light emitting region and a sealing region surrounding the light emitting region, ii) an organic light emitting diode formed over the substrate main body and iii) a sealant formed over the sealing region of the substrate main body, wherein the sealant includes a conductive member electrically connected to the organic light emitting diode. The apparatus may further include a printed circuit board bonded to the substrate main body by the sealant to seal and cover the organic light emitting diode, wherein the printed circuit board includes external input terminals which directly contact the conductive member.06-30-2011
20110156090SEMICONDUCTOR CHIP ASSEMBLY WITH POST/BASE/POST HEAT SPREADER AND ASYMMETRIC POSTS - A semiconductor chip assembly includes a semiconductor device, a heat spreader, a conductive trace and first and second adhesives. The heat spreader includes a first post, a second post and a base. The conductive trace includes a pad and a terminal. The semiconductor device is electrically connected to the conductive trace and thermally connected to the heat spreader. The first post extends from the base in a first vertical direction into a first opening in the first adhesive and is located within a periphery of the second post, the second post extends from the base in a second vertical direction into a second opening in the second adhesive and the base is sandwiched between and extends laterally from the posts. The conductive trace provides signal routing between the pad and the terminal.06-30-2011
20110156089Light Emitting Device, Light Emitting Device Package And Lighting System - Embodiments relate to a light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises: a substrate; a light emitting structure over the substrate, the light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, wherein the first conductive type semiconductor layer is partially exposed; a first region having a first concentration and provided at a region of the second conductive type semiconductor layer; a second region having a second concentration and provided at another region of the second conductive type semiconductor layer; and a second electrode over the second conductive type semiconductor layer.06-30-2011
20110156087FACE-UP OPTICAL SEMICONDUCTOR DEVICE AND METHOD - A face-up optical semiconductor device can be prepared by forming an n-type GaN layer, an active layer, and a p-type GaN layer on a C-plane sapphire substrate. Parts of the p-type GaN layer and the active layer can be removed, and a transparent electrode can be formed over all or most of the remaining p-type GaN layer. A p-side electrode including a pad portion and auxiliary electrode portions can be formed on the transparent electrode layer. An n-side electrode can be formed on the exposed n-type GaN layer. On regions of the transparent electrode layer where weak light emission regions may be formed, outside independent electrodes can be provided. They can be disposed on concentric circles with the n-side electrode as a center or tangent lines thereof so as to be along the circles or the tangent lines. The outside independent electrodes can diffuse current from the p-side electrode to the n-side electrode flowing through the transparent electrode layer into the short side end portions of the transparent electrode layer, thereby decreasing the weak light emission regions.06-30-2011
20110156085SEMICONDUCTOR PACKAGE - A semiconductor package includes at least four lead frames each having an extending portion and a connecting portion, a heat dissipation plate having a top surface and a bottom surface, at least one semiconductor chip positioned on the top surface of the heat dissipation plate. At least one conductive wire electrically connects the chip to the lead frames. An encapsulation covers the lead frames, the heat dissipation plate, the semiconductor chip, and the conductive wires, while the bottom surface of the heat dissipation plate and the extending portions of the lead frames are exposed.06-30-2011
20110156083Light emission module with high-efficiency light emission and high-efficiency heat dissipation and applications thereof - A light emission module is provided. The light emission module includes a substrate, a plurality of LED chips disposed on the substrate, a fluorescent colloid and a package colloid surrounding the plurality of LED chips. The substrate includes a substrate body and a plurality of chip pads disposed thereon for carrying the LED chips. A plurality of via holes is formed passing through the chip pads and the substrate body to enhance the heat dissipation of the LED chips. The fluorescent colloid and the package colloid both have light guide structures to improve the color stability and the capacity to process the light shape of the light emission module.06-30-2011
20110156082LED MODULE - An exemplary LED module includes a ceramic substrate, a heat spreader, a heat sink, an LED die, and a packaging layer. The substrate defines a hole extending therethrough from a top side to a bottom side thereof. The heat spreader is disposed in the hole with a top side thereof substantially coplanar with the top side of the substrate. An outer circumferential surface of the heat spreader contacts an inner circumferential surface of the substrate around the hole. The heat sink is attached to the top sides of the substrate and the heat spreader. The LED die is attached to a bottom side of the heat spreader, and the packaging layer encapsulates the LED die.06-30-2011
20090189178LEADFRAME HAVING A HEAT SINK SUPPORTING PART, FABRICATING METHOD OF A LIGHT EMITTING DIODE PACKAGE USING THE SAME, AND LIGHT EMITTING DIODE PACKAGE FABRICATED BY THE METHOD - Disclosed are a leadframe having heat sink supporting parts, a light emitting diode package in which the leadframe is employed, and a fabricating method of a light emitting diode package using the leadframe. The leadframe includes an outer frame surrounding a predetermined region. The heat sink supporting parts extend inward to face each other from the outer frame. Each of the supporting parts has an end portion coupled to a heat sink. Further, lead terminals extend inward to face each other from the outer frame. The lead terminals are spaced apart from the supporting parts. Accordingly, a package main body can be formed by an insert molding technique after the heat sink is coupled to the end portions of the supporting parts, and the heat sink and the lead terminals can be easily aligned.07-30-2009
20120043577CURABLE SILICONE RESIN COMPOSITION AND LIGHT-EMITTING DIODE DEVICE USING THE SAME - This invention discloses a curable silicone resin composition used for sealing a light-emitting diode device, comprising at least a silicone resin having a refractive index of 1.50˜1.55 after curing and a silicon oxide filler having an average particle diameter of 1˜10 μm dispersed uniformly in the said silicone resin at the concentration of 1˜30 mass % and a light-emitting diode device using the same.02-23-2012
20120056234HEAT DISSIPATION MATERIAL AND LIGHT EMITTING DIODE PACKAGE INCLUDING A JUNCTION PART MADE OF THE HEAT DISSIPATION MATERIAL - Disclosed are a heat dissipation material comprising a metallic glass and an organic vehicle and a light emitting diode package including at least one of a junction part, wherein the junction part includes a heat dissipation material including a metallic glass.03-08-2012
20120056233LED PACKAGE - An LED package includes a base, an LED chip and an encapsulation. The LED chip is mounted on the base. The encapsulation encapsulates the LED chip. A heat dissipating plate is sandwiched between the LED chip and the base. The heat dissipating plate includes a first surface and a second surface. The LED chip is mounted on the first surface of the heat dissipating plate and has an interface engaging with the first surface of the heat dissipating plate. The first surface of the heat dissipating plate has an area greater than that of the interface. The second surface of the heat dissipating plate is attached to the base.03-08-2012
20120056235OPTOELECTRONIC MODULE AND METHOD OF PRODUCING AN OPTOELECTRONIC MODULE - An optoelectronic module includes a radiation-emitting semiconductor component, an electrical component and a carrier substrate. The carrier substrate includes a top and a bottom, wherein first electrical connections are arranged on the bottom and second electrical connections are arranged on the top. The electrical component is arranged on the top of the carrier substrate and is electrically conductively connected with the first electrical connections. The radiation-emitting semiconductor component is arranged on the side of the electrical component remote from the carrier substrate. The radiation-emitting semiconductor component furthermore includes conductive structures electrically conductively connected with the second electrical connections.03-08-2012
20120056232SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor light emitting device includes a structural body, a first electrode layer, an intermediate layer and a second electrode layer. The structural body includes a first semiconductor layer of first conductivity type, a second semiconductor layer of second conductivity type, and a light emitting layer between the first and second semiconductor layers. The first electrode layer is on a side of the second semiconductor layer opposite to the first semiconductor layer; the first electrode layer includes a metal portion and plural opening portions piercing the metal portion along a direction from the first semiconductor layer toward the second semiconductor layer, having an equivalent circular diameter not less than 10 nanometers and not more than 5 micrometers. The intermediate layer is between the first and second semiconductor layers in ohmic contact with the second semiconductor layer. The second electrode layer is electrically connected to the first semiconductor layer.03-08-2012
20120061714Fluorene Compound, Light-Emitting Element, Light-Emitting Device, Electronic Device, Lighting Device, and Organic Compound - A substance having a hole-transport property and a wide band gap is provided. A fluorene compound represented by a general formula (G1) is provided. In the general formula (G1), α03-15-2012
20120061717HEAT CONDUCTING SLUG HAVING MULTI-STEP STRUCTURE AND THE LIGHT EMITTING DIODE PACKAGE USING THE SAME - The present invention relates to a light-emitting diode package having a plurality of inner leads, a plurality of outer leads extending from the inner leads, a slug electrically connected to at least one of the inner leads, the slug having a thermally conductive material, a light-emitting chip arranged on the slug, and a housing supporting the light-emitting diode package.03-15-2012
20120061716MANUFACTURING METHOD FOR POWER LED HEAD-DISSIPATING SUBSTRATE AND POWER LED PRODUCT AND THE PRODUCTS THEREOF - The present invention provides manufacturing methods for a power LED substrate with a mounting hole and a heat sink and for its power LED product and products thereof. The disclosed fabrication methods for power LED heat-dissipating substrate include the following steps a) selecting substrate material and processing; b) fabricating heat sink; c) assembling substrate and heat sink. The manufacturing methods of power LED products are based upon the manufacturing methods for heat-dissipating substrate, including the following steps: mounting LED die, bonding wire, packaging, post hardening, separating components, testing, classifying, and taping.03-15-2012
20120061715SEMICONDUCTOR LIGHT-EMITTING DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR LIGHT-EMITTING DEVICE - There is provided a semiconductor light-emitting device manufacturing method which includes the steps of forming a semiconductor growth film on a growth substrate; forming a metal film on the semiconductor growth film; forming a multilayer insulating film on the metal film, the multilayer insulating film having at least a first insulating layer and a second insulating layer adjacent to each other; and forming a support member on the multilayer insulating film. Pinholes present in the first insulating layer are discontinuous with pinholes present in the second insulating layer at an interface between the first and the second insulating layers.03-15-2012
20120205709Light-Emitting Device and Lighting Device - A light-emitting device and a lighting device each including a light-emitting element which can recover from a short circuit between a pair of electrodes by itself without adversely affecting the characteristics of the element is provided. An oxide layer is provided so as to be in contact with an electrode of the light-emitting element, whereby, due to heat generated when a short circuit is caused between a pair of electrodes, oxygen in the oxide layer and an electrode material in a short-circuited part are reacted with each other and the electrode material in the short-circuited part can be an insulator. Further, by providing an oxide layer in contact with an electron-injection layer containing an alkaline earth metal, an oxide of the alkaline earth metal can be formed, whereby moisture that enters the insulator formed by an insulation phenomenon in the short-circuited part can be adsorbed and removed.08-16-2012
20110095329LIGHT EMITTING DEVICE PACKAGE - Provided are a light emitting device package and a lighting system. The light emitting device package includes a light emitting device chip, at least one wire, and an encapsulating material. The light emitting device chip includes a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers. The wire is on the light emitting device chip. The encapsulating material is on the light emitting device chip out of the wire, and includes a phosphor. The wire is perpendicular to an upper surface of the light emitting device chip, at least up to a height of the encapsulating material.04-28-2011
20110095331GROUP-III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD FOR MANUFACTURING THE SAME, AND LAMP - Provided is a group-III nitride semiconductor light-emitting device which has a high level of crystallinity and superior internal quantum efficiency and which is capable of enabling acquisition of high level light emission output, and a manufacturing method thereof, and a lamp. An AlN seed layer composed of a group-III nitride based compound is laminated on a substrate 04-28-2011
20100025719BOND PAD DESIGN FOR ENHANCING LIGHT EXTRACTION FROM LED CHIPS - An improved bond pad design for increased light extraction efficiency for use in light emitting diodes (LEDs) and LED packages. Embodiments of the present invention incorporate a structure that physically isolates the bond pads from the primary emission surface, forcing the current to flow away from the bond pads first before traveling down into the semiconductor material toward the active region. This structure reduces the amount of light that is generated in the area near the bond pads, so that less of the generated light is trapped underneath the bond pads and absorbed.02-04-2010
20130193476LIGHT EMITTING DEVICE WITH REDUCE EPI STRESS - Elements are added to a light emitting device to reduce the stress within the light emitting device caused by thermal cycling. Alternatively, or additionally, materials are selected for forming contacts within a light emitting device based on their coefficient of thermal expansion and their relative cost, copper alloys being less expensive than gold, and providing a lower coefficient of thermal expansion than copper. Elements of the light emitting device may also be structured to distribute the stress during thermal cycling.08-01-2013
20120012884SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device according to an embodiment includes: a substrate; an n-type semiconductor layer formed on the substrate; an active layer formed on a first region of the n-type semiconductor layer, and emitting light; a p-type semiconductor layer formed on the active layer; a p-electrode formed on the p-type semiconductor layer, and including a first conductive oxide layer having an oxygen content lower than 01-19-2012
20120012889SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR PRODUCING SEMICONDUCTOR LIGHT EMITTING ELEMENT - A semiconductor light emitting element (01-19-2012
20120012885LEAD FRAME - A lead frame enabling simultaneous burn-in testing of plural LEDs while the LEDs are mounted thereon is disclosed. The lead frame according to embodiments of this disclosure may enable burn-in testing of LEDs before packaging.01-19-2012
20120012888LIGHT EMITTING DEVICE - A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.01-19-2012
20120018764SEMICONDUCTOR LIGHT EMITTING DEVICE - The present invention relates to a vertical/horizontal light-emitting diode for a semiconductor. An exemplary embodiment of the present invention provides a semiconductor light-emitting diode comprising: a conductive substrate; a light-emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer sequentially formed over the conductive substrate; a second conductive electrode including a conductive via that passes through the first conductive semiconductor and active layers to be connected with the second conductive semiconductor layer therein, and an electrical connector that extends from the conductive via and is exposed outside the light-emitting structure; a passivation layer for covering a dielectric and at least the side surface of the active layer of the light-emitting structure, the dielectric serving to electrically isolate the second conductive electrode from the conductive substrate, the first conductive semiconductor layer and the active layer; and a surface relief structure formed on the pathway of light emitted from the active layer. According to the present invention, a semiconductor light-emitting diode exhibiting enhanced external light extraction efficiency, especially the diode's side light extraction efficiency, can be obtained.01-26-2012
20110049559LIGHT-EMITTING DIODE LAMP WITH LOW THERMAL RESISTANCE - A light-emitting diode (LED) structure with an improved heat transfer path with a lower thermal resistance than conventional LED lamps is provided. For some embodiments, a surface-mountable light-emitting diode structure is provided having an active layer deposited on a metal substrate directly bonded to a metal plate that is substantially exposed for low thermal resistance by positioning it on the bottom of the light-emitting diode structure. This metal plate can then be soldered to a printed circuit board (PCB) that includes a heat sink. For some embodiments of the invention, the metal plate is thermally and electrically conductively connected through several heat conduction layers to a large heat sink that may be included in the structure.03-03-2011
20110049558SEMICONDUCTOR CHIP ASSEMBLY WITH POST/BASE HEAT SPREADER, SIGNAL POST AND CAVITY - A semiconductor chip assembly includes a semiconductor device, a heat spreader, a conductive trace and an adhesive. The heat spreader includes a thermal post and a base. The conductive trace includes a pad, a terminal and a signal post. The semiconductor device extends into a cavity in the thermal post, is electrically connected to the conductive trace and is thermally connected to the heat spreader. The thermal post extends upwardly from the base into a first opening in the adhesive, and the signal post extends upwardly from the terminal into a second opening in the adhesive. The conductive trace is located outside the cavity and provides signal routing between the pad and the terminal.03-03-2011
20110049557OPTICAL DEVICE AND METHOD OF MANUFACTURING THE SAME - An optical device having following components is disclosed. A semiconductor substrate has an element region formed on its upper side. A light transmitting insulator film covers an element region and has at least one recessed portion located in a region outside the element region. At least one protruding portion is provided in a region on the light transmitting insulator film outside the element region and inside the recessed portion. A light transmitting member covers the element region from above and is provided on the protruding portion. A light transmitting adhesive is filled in between the light transmitting insulator film and the light transmitting member.03-03-2011
20120153341Flexible Photovoltaic Cells Having a Polyimide Material Layer and Method of Producing Same - A photovoltaic cell is fabricated onto a polyimide film using an unbalanced RF magnetron sputtering process. The sputtering process includes the addition of 0.05% to 0.5% oxygen to an inert gas stream. Portions of the photovoltaic cell are exposed to an elevated temperature CdCl06-21-2012
20120153344METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a semiconductor layer including a first surface, a second surface opposite to the first surface, and a light emitting layer; a p-side electrode provided on the second surface of the semiconductor layer in a region including the light emitting layer; an n-side electrode provided on the second surface of the semiconductor layer in a region not including the light emitting layer; an insulating film being more flexible than the semiconductor layer, the insulating film provided on the second surface and a side surface of the semiconductor layer, and the insulating film having a first opening reaching the p-side electrode and a second opening reaching the n-side electrode; a p-side interconnection layer provided on the insulating film and connected to the p-side electrode; and an n-side interconnection layer provided on the insulating film and connected to the n-side electrode.06-21-2012
20120153343METHODS OF FORMING LIGHT EMITTING DEVICES HAVING CURRENT REDUCING STRUCTURES - A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. A non-transparent feature, such as a wire bond pad, is on the p-type semiconductor layer or on the n-type semiconductor layer opposite the p-type semiconductor layer, and a reduced conductivity region is in the p-type semiconductor layer or the n-type semiconductor layer and is aligned with the non-transparent feature. The reduced conductivity region may extend from a surface of the p-type semiconductor layer opposite the n-type semiconductor layer towards the active region and/or from a surface of the n-type semiconductor layer opposite the p-type semiconductor layer towards the active region.06-21-2012
20120153342DIE-BONDING MATERIAL FOR OPTICAL SEMICONDUCTOR DEVICES AND OPTICAL SEMICONDUCTOR DEVICE USING SAME - The present invention provides a die bonding material for an optical semiconductor device which has high thermal conductivity and can prevent cracking in an optical semiconductor device including the die bonding material.06-21-2012
20120153340SUBMOUNT, OPTICAL MODULE PROVIDED THEREWITH, AND SUBMOUNT MANUFACTURING METHOD - In order to simplify submount manufacture, and increase the manufacturing efficiency thereof, a first electrode layer (06-21-2012
20120153339LIGHT-EMITTING DIODE CHIP STRUCTURE AND FABRICATION METHOD THEREOF - A light-emitting diode chip structure including a conductive substrate, a semiconductor stacking layer and a patterned seed crystal layer is provided. The conductive substrate has a surface. The surface has a first region and a second region alternately distributed over the surface. The semiconductor stacking layer is disposed on the conductive substrate, and the surface of the conductive substrate faces the semiconductor stacking layer. The patterned seed crystal layer is disposed on the first region of the surface of the conductive substrate and between the conductive substrate and the semiconductor stacking layer. The patterned seed crystal layer separates the semiconductor stacking layer from the first region. The semiconductor stacking layer covers the patterned seed crystal layer and the second region, and is electrically connected to the conductive substrate through the second region. A fabrication method of the light-emitting diode chip structure is also provided.06-21-2012
20120153338SUBSTRATE STRUCTURE AND FABRICATION THEREOF, AND LIGHT EMITTING DIODE DEVICES FABRICATED FROM THE SAME - A substrate structure is described, including a starting substrate, crystal piers on the starting substrate, and a mask layer. The mask layer covers an upper portion of the sidewall of each crystal pier, is connected between the crystal piers at its bottom, and is separated from the starting substrate by an empty space between the crystal piers. An epitaxial substrate structure is also described, which can be formed by growing an epitaxial layer over the above substrate structure form the crystal piers. The crystal piers may be broken after the epitaxial layer is grown.06-21-2012
20120025257LED ASSEMBLY AND MANUFACTURING METHOD THEREOF - An LED assembly including a heat sink, a surface treatment dielectric layer, an electrically conductive layer, a thermally conductive layer and an LED chip. The surface treatment dielectric layer is disposed on an upper surface of the heat sink and defines at least one first through hole to expose a portion of the upper surface. The electrically conductive layer is formed on the surface treatment dielectric layer, includes a plurality of electrical traces and defines at least one second through hole corresponding to the first through hole. The thermally conductive layer is formed in the first and the second through holes and directly contacted with a portion of the upper surface exposed from the overlapped region of the first through hole and the second through hole. The LED chip includes a plurality of electrodes electrically connected to the electrical traces and is directly contacted with the thermally conductive layer.02-02-2012
20120061712SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a first electrode layer, a light emitting layer, a second semiconductor layer, a third semiconductor layer and a second electrode layer. The first electrode layer includes a metal portion having a plurality of opening portions. The opening portions penetrate the metal portion and have an equivalent circle diameter of a shape of the opening portions. The light emitting layer is between the first semiconductor layer and the first electrode layer. The second semiconductor layer of a second conductivity type is between the light emitting layer and the first electrode layer. The third semiconductor layer of a second conductivity type is between the second semiconductor layer and the first electrode layer. The second electrode layer is connected to the first semiconductor layer.03-15-2012
20120061710Method for Treating Metal Surfaces - A method for treating a metal surface to reduce corrosion thereon and/or to increase the reflectance of the treated surface, the method comprising a) plating a metal surface with an electroless nickel plating solution; and thereafter b) immersion plating silver on the electroless nickel plated surface, whereby corrosion of the metal surface is substantially prevented and/or the reflectance of the silver plated surface is substantially improved. The treating method is useful for increasing the solderability of the metal surface, for example, in electronic packaging applications.03-15-2012
20120061711LIGHT EMITTING DIODE WITH INDEPENDENT ELECTRODE PATTERNS - A light emitting diode includes a substrate, an N-doped layer disposed on the substrate, a plurality of cathodes disposed between the N-doped layer and the substrate, an active layer disposed on the N-doped layer, a P-doped layer disposed on the active layer, and a plurality of anodes disposed on the P-doped layer. The cathodes are electrically connected to the N-doped layer, and the patterns of the cathodes are disconnected from each other. The anodes are electrically connected to the P-doped layer, and the patterns of the anodes are disconnected from each other. Each cathode and a corresponding anode form a loop, and each loop is an independent loop.03-15-2012
20120175664LIGHTING DEVICE AND METHOD FOR FORMING THE SAME - The present invention provides a lighting device and method for forming the same. The lighting device comprises a base having a first surface, a conductive wiring layer formed on the first surface, and a light emitting diode module comprising a substrate and at least one light emitting diode disposed on the substrate wherein the substrate of the light emitting diode module is disposed on the conductive wiring layer by a surface mount method. In one embodiment, the base is preferably made of ceramics.07-12-2012
20120175663COOLING UNIT USING IONIC WIND AND LED LIGHTING UNIT INCLUDING THE COOLING UNIT - A cooling unit includes a heat radiant having a heat radiating plate contacting a heating element, and a plurality of heat radiation pins protruding from the heat radiating plate and separated from each other with predetermined intervals therebetween, and formed of an electrical insulating material; and an ionic wind generating unit comprising a corona emitter electrode contacting at least one of the heat radiation pins, a collector electrode facing the corona emitter electrode, and a power unit to connect the corona emitter electrode to the collector electrode and to apply a high voltage to the corona emitter electrode. Thus, the corona emitter electrode and the collector electrode of the ionic wind generating unit may be directly attached to the heat radiant, and a small and light cooling unit may be formed.07-12-2012
20120175662VERTICAL LIGHT EMITTING DEVICE - According to an example embodiment, a vertical light emitting device (LED) includes a semiconductor layer including an active layer configured to emitting light, a first electrode on a first side of the semiconductor layer, and a second electrode on a second side of the semiconductor layer opposite to the first electrode. At least one of the first and second electrodes includes a metal electrode pattern and a transparent electrode pattern. The transparent electrode pattern is in a region between segment electrodes of the metal electrode pattern. The transparent electrode pattern is electrically connected to the metal electrode pattern.07-12-2012
20120175669LIGHT EMITTING DEVICE USING GaN LED CHIP - A light emitting device is constituted by flip-chip mounting a GaN-based LED chip. The GaN-based LED chip includes a light-transmissive substrate and a GaN-based semiconductor layer formed on the light-transmissive substrate, wherein the GaN-based semiconductor layer has a laminate structure containing an n-type layer, a light emitting layer and a p-type layer in this order from the light-transmissive substrate side, wherein a positive electrode is formed on the p-type layer, the electrode containing a light-transmissive electrode of an oxide semiconductor and a positive contact electrode electrically connected to the light-transmissive electrode, and the area of the positive contact electrode is half or less of the area of the upper surface of the p-type layer.07-12-2012
20120175668Electronic Component and Electrical Contact - An electronic component (07-12-2012
20120175667LED LIGHT DISPOSED ON A FLEXIBLE SUBSTRATE AND CONNECTED WITH A PRINTED 3D CONDUCTOR - An example includes subject matter (such as an apparatus) comprising a planar substrate including a first surface that is planar, at least one bare light emitting diode (“LED”) die coupled to the substrate and conductive ink electrically coupling the at least one bare LED die, wherein the conductive ink is disposed on the substrate and extends onto a surface of the LED that is out-of-plane from the first surface.07-12-2012
20120205708LIGHT-EMITTING DEVICE PACKAGE AND METHOD OF MANUFACTURING THE SAME - A light-emitting device package. The light-emitting device package includes a lead frame comprising a plurality of separate leads; a molding member that fixes the plurality of leads and comprises an opening portion that exposes the lead frame; and a light-emitting device chip that is attached on the lead frame in the opening portion and emits light through an upper surface portion of the light-emitting device chip, wherein a height of the molding member is lower than a height of the light-emitting device chip with respect to the lead frame.08-16-2012
20110042709Free-standing mounted light emitting diodes for general lighting - The current invention introduces a semiconductor light emitting device mounted in a free-standing way for enhanced light extraction and handling simplicity. The free-standing mount is based on the mechanical strength of the current carrying connectors, such as wires or bonds. Such mounted LED die can be placed into standard light bulb body for compatibility with existing household, car, consumer electronics or industrial light sources. The current invention provides increased light extraction efficiency which makes general LED lighting simpler and cheaper. The mounting into a conventional light bulb provides the consumer with the ease of handling and mounting.02-24-2011
20110042708OPTICAL SEMICONDUCTOR DEVICE HAVING METAL LAYER WITH COARSE PORTION SANDWICHED BY TIGHT PORTIONS AND ITS MANUFACTURING METHOD - In an optical semiconductor device including a semiconductor laminated body including at least a light emitting layer, a first metal body including at least one first metal layer formed on the semiconductor laminated body, a support substrate, a second metal body including at least one second metal layer formed on the support substrate, and at least one adhesive layer formed in a surface side of at least one of the first and second metal bodies, the semiconductor laminated body is coupled to the support substrate by applying a pressure-welding bonding process upon the adhesive layer to form a eutectic alloy layer between the first and second metal bodies. At least one of the first and second metal layers has a triple structure formed by two tight portions and a coarse portion sandwiched by the tight portions.02-24-2011
20110042707Substrate for flexible display device, OLED display device including the same, and associated methods - A substrate for a flexible display device, an OLED display device including the same, and associated methods, the substrate including a composite of an inorganic layered compound and a moisture-absorption material, and a polymer resin.02-24-2011
20100096662SEMICONDUCTOR CHIP ASSEMBLY WITH POST/BASE HEAT SPREADER AND SIGNAL POST - A semiconductor chip assembly includes a semiconductor device, a heat spreader, a conductive trace and an adhesive. The semiconductor device is electrically connected to the conductive trace and thermally connected to the heat spreader. The heat spreader includes a thermal post and a base. The thermal post extends upwardly from the base into a first opening in the adhesive, and the base extends laterally from the thermal post. The conductive trace includes a pad, a terminal and a signal post. The signal post extends upwardly from the terminal into a second opening in the adhesive.04-22-2010
20100096658Structure of Light Emitting Diode - An improved structure of light emitting diode comprises that a copper clad laminate is made with a rectangular type slot thereon and a ring type slot on the outside boundary to enclose the rectangular type slot, while side wall of the slot form a natural guide angle with the surface of the copper clad laminate to further form an island type platform; a conductor being made between rectangular type slot and ring type slot is penetrated through the copper clad laminate and externally enclosed by the insulator thereby allowing conductor to be insulated; a light emitting diode chip is installed thereon; a fluorescent glue is optionally installed on the light emitting diode with a covering range smaller than the natural guiding angle of the rectangular type slot, wherein the copper clad laminate is installed on the printed circuit board.04-22-2010
20100096661LIGHT EMITTING DIODE MODULE - Provided an LED module comprising a metallic thin film having a flexibility; a circuit pattern printed on the metallic thin film so as to be insulated from the metallic thin film; one or more LEDs mounted on the metallic thin film on which the circuit pattern is not formed; wire for electrically connecting the LED and the circuit pattern; and a fluorescent body formed on the LED.04-22-2010
20100096660SEMICONDUCTOR LIGHT EMITTING DEVICE - Disclosed are a semiconductor light emitting device. The semiconductor light emitting device comprises a light emitting structure comprising a plurality of compound semiconductor layers, a passivation layer at the outside of the light emitting structure, a first electrode layer on the light emitting structure, and a second electrode layer under the light emitting structure.04-22-2010
20110024790OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND METHOD OF PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT - An optoelectronic semiconductor component includes a connection support with a connection side, at least one optoelectronic semiconductor chip mounted on the connection side and electrically connected to the connection support, an adhesion-promoting intermediate film applied to the connection side and covering the latter at least in selected places, and at least one radiation-transmissive cast body which at least partially surrounds the semiconductor chip, the cast body being connected mechanically to the connection support by the intermediate film.02-03-2011
20090134425SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, AND LIGHTING APPARATUS AND DISPLAY APPARATUS USING THE SAME - The present invention aims to provide a semiconductor light emitting device that may be firmly attached to a substrate with maintaining excellent light emitting efficiency, and a manufacturing method of the same, and a lighting apparatus and a display apparatus using the same.05-28-2009
20090134424Light emitting structure and securing device thereof - The light emitting structure disclosed includes a light emitting device, a metal frame, and a repressing fastener. The light emitting device has a plurality of first coupling terminals, and the metal frame has a plurality of second coupling portions. The light emitting device is disposed in the metal frame, and the first coupling terminals touch the second coupling portions to electrically connect the light emitting device and the metal frame. The repressing fastener is disposed on the light emitting device and fastened to the metal frame to secure the light emitting device in the metal frame. An LED securing device is also disclosed.05-28-2009
20090134423LIGHT EMITTING DIODE DEVICE - A light emitting diode (LED) device comprises a first lead frame, a second lead frame, a LED die and at least one bump. The LED die is fixed on and electrically connected to the first lead frame. The second lead frame separated from the first lead frame with a distance is connected to the LED die. The bump disposed on at least one of the first lead frame and the second lead frame to identify a gripping space for allowing an electronic element inserted or gripped therein.05-28-2009
20090134422LED PACKAGE MODULE AND MANUFACTURING METHOD THEREOF - A light emitting diode (LED) package module includes a substrate, a first LED die, a second LED die, a connecting circuit and a repairing circuit. The first LED die and the second LED die are disposed on the substrate by wire bonding or flip-chip bonding. The second LED die and the first LED die are electrically connected in series through the connecting circuit. The repairing circuit has two first extension portions, which are electrically connected with two electrodes of the first LED die, respectively. A manufacturing method of the LED package module is also disclosed.05-28-2009
20110089462METHOD FOR LOW TEMPERATURE BONDING OF ELECTRONIC COMPONENTS - A method for bonding an LED assembly (04-21-2011
20110089464LIGHT EMITTING DIODE PACKAGE AND METHOD OF FABRICATING THE SAME - A light emitting diode package includes a base having a first surface, an electrode portion attached to the base, a pair of inner electrodes disposed on the first surface, a pair of outer electrodes, a pair of conductive pillars, a light emitting diode die, and a cap layer. Each outer electrode includes an end surface section and a side surface section. The end surface sections are disposed, corresponding to the inner electrodes, on the second surface. Each side surface section extends onto the side surface of the electrode portion. The conductive pillar penetrates between the inner electrode and the outer electrode. The light emitting diode die is on the first surface, electrically connecting the inner electrode. The cap layer covers the light emitting diode die.04-21-2011
20110089463Light Source - Light sources are disclosed herein. One embodiment comprises a substrate having a first surface and a second surface located opposite the first surface. At least one first electrically conductive layer is affixed to the first surface of the substrate and partially covering the first surface of the substrate. At least one second electrically conductive layer is affixed to the first surface of the substrate and partially covering the first surface of the substrate. A light emitter is affixed to the first surface of the substrate in an area not covered by either of the at least one first electrically conductive layer or the at least one second electrically conductive layer. The substrate may be thinner in the area where the light emitter is affixed than in the areas where the first and second electrically conductive layers are affixed. A heat sink may be attached to the second surface of the substrate.04-21-2011
20110089461LED package structure and manufacturing process thereof - A process for manufacturing an LED package structure includes the following steps: (A) providing a T-shaped heat-sink block and an integral material sheet, wherein the T-shaped heat-sink block includes a base portion and a rise portion extending from the base portion, and wherein the integral material sheet includes a side frame and a pair of electrode lead frames extending, respectively, from two opposite internal sides of the side frame; (B) forming an insulating layer on an upper surface of the base portion; (C) disposing the electrode lead frames on the insulating layer; and (D) forming an insulating outer frame around the T-shaped heat-sink block, wherein the insulating layer is enveloped in the insulating outer frame, and part of the base portion of the heat-sink block exposes out of the insulating outer frame. As a result, the LED package structure can improve voltage resistance and insulation.04-21-2011
20110089460LIGHT EMITTING DIODE ASSEMBLY - An electronic assembly includes a Light Emitting Diode (LED) mounted on a top surface of a heat spreader, at least two electrical contacts co-planar with the heat spreader, and at least one heat slug mounted on the top surface of the heat spreader, where the heat slug is made of high thermal conductive plastic.04-21-2011
20120119250Optoelectronic Semiconductor Component - An optoelectronic semiconductor component (05-17-2012
20120119251LIGHTING DEVICE - An object of the invention is to provide a lighting device which can suppress luminance nonuniformity in a light emitting region when the lighting device has large area. A layer including a light emitting material is formed between a first electrode and a second electrode, and a third electrode is formed to connect to the first electrode through an opening formed in the second electrode and the layer including a light emitting material. An effect of voltage drop due to relatively high resistivity of the first electrode can be reduced by electrically connecting the third electrode to the first electrode through the opening.05-17-2012
20120119247LIGHT EMITTING DEVICE - Disclosed herein is a light emitting device, which includes a first substrate, a protective layer, a second substrate, a buffer member and a sealant. The first substrate has an illuminating member thereon. The protective layer covers the illuminating member and has a first coefficient of thermal expansion. The second substrate is disposed over the protective layer. The buffer member is disposed between the first and second substrates and surrounds the protective layer, wherein the buffer member has a second coefficient of thermal expansion which is less than the first coefficient. The sealant surrounds the buffer member and seals off the space between the first and second substrates, wherein the sealant has a third coefficient of thermal expansion which is less than the second coefficient.05-17-2012
20120211793Low Temperature High Strength Metal Stack for Die Attachment - A light emitting diode structure includes a diode region and a metal stack on the diode region. The metal stack includes a barrier layer on the diode region and a bonding layer on the barrier layer. The barrier layer is between the bonding layer and the diode region. The bonding layer includes gold, tin and nickel. A weight percentage of tin in the bonding layer is greater than 20 percent and a weight percentage of gold in the bonding layer is less than about 75 percent. A weight percentage of nickel in the bonding layer may be greater than 10 percent.08-23-2012
20120211796Metal Wiring and Method of Manufacturing the Same, and Metal Wiring Substrate and Method of Manufacturing the Same - A metal wiring suitable for a substrate of large size is provided. The present invention is characterized in that at least one layer of conductive film is formed on an insulating surface, a resist pattern is formed on the conductive film, and the conductive film having the resist pattern is etched to form a metal wiring while controlling its taper angle α in accordance with the bias power density, the ICP power density, the temperature of lower electrode, the pressure, the total flow rate of etching gas, or the ratio of oxygen or chlorine in etching gas. The thus formed metal wiring has less fluctuation in width or length and can satisfactorily deal with an increase in size of substrate.08-23-2012
20120211795SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING SUBSTRATE HAVING PROTECTION LAYERS AND METHOD FOR MANUFACTURING THE SAME - The present invention provides a compound semiconductor light emitting device including: an Si—Al substrate; protection layers formed on top and bottom surfaces of the Si—Al substrate; and a p-type semiconductor layer, an active layer, and an n-type semiconductor layer which are sequentially stacked on the protection layer formed on the top surface of the Si—Al substrate, and a method for manufacturing the same.08-23-2012
20120211794LIGHT-EMITTING DEVICE - This disclosure discloses a light-emitting device. The light-emitting device comprises: a light-emitting stack having an upper surface and a lower surface; a pad, arranged on the upper surface, comprising: a first bonding region; and a second bonding region physically connected to the first bonding region through a connecting region having a connecting width; a first electrode connected to the first bonding region; a second electrode connected to the second bonding region; and a third electrode extending from the pad and arranged between the first electrode and the second electrode. At least one of the first electrode, the second electrode, and the third electrode has a width smaller than the connecting width.08-23-2012
20120211792Package Substrate and Method for Forming the Same - A package substrate is disclosed. The package substrate includes a substrate body having a conductive portion, a plurality of insulation portions and two surfaces opposing to each other; and a plurality of bonding layers for heat dissipation formed on the two surfaces of the substrate body, conducted via the conductive portion and separated from one another by the insulation portions. A method for forming the package substrate is also disclosed.08-23-2012
20100289054SEMICONDUCTOR CHIP ASSEMBLY WITH POST/BASE HEAT SPREADER AND ADHESIVE BETWEEN BASE AND TERMINAL - A semiconductor chip assembly includes a semiconductor device, a heat spreader, a conductive trace and an adhesive. The semiconductor device is electrically connected to the conductive trace and thermally connected to the heat spreader. The heat spreader includes a thermal post and a base. The thermal post extends upwardly from the base into a first opening in the adhesive, and the base extends laterally from the thermal post. The conductive trace includes a pad, a terminal and a signal post. The signal post extends upwardly from the terminal into a second opening in the adhesive. The adhesive extends above the base and between the base and the terminal.11-18-2010
20100289053SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR ELEMENT AND METHOD OF MANUFACTURING THE SAME - Disclosed herein is a method of manufacturing a semiconductor light emitting element, including the steps of: forming a nickel thin film having a thickness of one atomic layer to 10 nm so as to contact a semiconductor layer forming a light emitting element structure; and forming a silver electrode on the nickel thin film.11-18-2010
20120126278SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device including a second electrode layer; a light emitting unit including a plurality of compound semiconductor layers under one portion of the second electrode layer; a first insulating layer under the other portion of the second electrode; an electrostatic protection unit including a plurality of compound semiconductor layer under the first insulating layer; a first electrode layer electrically connecting the light emitting unit to the electrostatic protection unit; and a wiring layer electrically connecting the electrostatic protection unit to the second electrode layer.05-24-2012
20120126280LIGHT EMITTING DEVICE AND LIGHT UNIT USING THE SAME - Disclosed are a light emitting device and a light unit using the same. The light emitting device includes a body, a light emitting diode installed in the body, a plurality of lead frames disposed in the body and electrically connected to the light emitting diode; and a heat dissipation member received in the body, thermally connected to the light emitting diode, and having a plurality of heat dissipation fins exposed from a lower surface of the body.05-24-2012
20120126277Light-Emitting Element, Manufacturing Method Thereof, and Lighting Device - A light-emitting element includes a conductive layer functioning as a first electrode, an electroluminescent layer, and a conductive layer functioning as a second electrode, and further includes an insulating material filling a defect portion in the electroluminescent layer so that the defect portion is sealed. In the light-emitting element, the conductive layer functioning as a second electrode overlaps with the conductive layer functioning as a first electrode with the electroluminescent layer and the insulating material interposed therebetween and is in contact with a top surface of the electroluminescent layer.05-24-2012
20120161191LIGHT-EMITTING MODULE - A light-emitting module includes a light-emitting diode package structure and an insulating support structure. The light-emitting diode package structure includes a package base and at least two leads. The package base has a first surface, and each lead has a bonding surface. The insulating support structure has a second surface and a third surface opposite to each other, and the insulating support structure is disposed under the package base, so that the first surface is in contact with the second surface. The bonding surfaces and the third surface are located in different planes.06-28-2012
20120248493ELECTRICAL AND/OR ELECTRONIC DEVICE WITH ELASTIC CONTACT ELEMENT - An electrical and/or electronic device including: an electrical and/or electronic component; two layers of material forming front and back faces of the device and between which the electrical and/or electronic component is encapsulated, the component including at least two opposite faces placed facing the two layers of material; an electrical contact element placed in contact with one of the faces of the electrical and/or electronic component; an element based on at least one elastic material placed between one of the two layers of material and the electrical contact element, forming a first layer of elastic material covering the one of the two layers of material; and a second layer based on at least one elastic material with an elastic stiffness less than the stiffness of the elastic material in the first layer, placed in contact with the first layer of elastic material.10-04-2012
20120248490NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PRODUCTION METHOD THEREOF - In a nitride semiconductor light-emitting device having an n-side and a p-side electrode pad formed on the same side of a substrate wherein current distribution in the light-emitting device is improved by forming branch electrodes extended from the p-side electrode pad (and the n-side electrode pad), when sheet resistance values of n-side and p-side layers in the device are low enough, contact resistance between a p-type nitride semiconductor layer and a current diffusion layer of a transparent conductive film formed thereon is reduced and in-plane distribution of the sheet resistance is made uniform whereby improving the optical output, by increasing in a prescribed condition the sheet resistance value of the current diffusion layer.10-04-2012
20120126279OPTOELECTRONIC SEMICONDUCTOR COMPONENT - An optoelectronic semi-conductor component includes a first carrier having a top side and an underside laying opposite the top side of the first carrier, wherein the first carrier has a first and a second region; at least one optoelectronic semiconductor chip arranged at the top side on the first carrier; and at least one electronic component arranged in the second region at the underside of the first carrier, wherein the first region has a greater thickness in a vertical direction than the second region, wherein, at the underside, the first region projects beyond the second region in a vertical direction, and the at least one electronic component is electrically conductively connected to the at least one optoelectronic semi-conductor chip.05-24-2012
20120161194LIGHT-EMITTING DEVICE AND LIGHTING APPARATUS - A light-emitting device includes a substrate having a front surface on which a semiconductor light-emitting element is mounted. A front cover is provided which thermally contacts the front surface of the substrate at a periphery of the semiconductor light-emitting element and is disposed on a front side of the substrate. A heat conduction path is formed along which heat generated by the semiconductor light-emitting element is conducted in order of the substrate and the front cover and the heat is radiated from a front surface of the front cover, so that a heat radiation property from a front surface of the light-emitting device is improved.06-28-2012
20120161193LED LAMPS - A high power LED lamp has a GaN chip placed over an AlGaInP chip. A reflector is placed between the two chips. Each of the chips has trenches diverting light for output. The chip pair can be arranged to produce white light having a spectral distribution in the red to blue region that is close to that of daylight. Also, the chip pair can be used to provide an RGB lamp or a red-amber-green traffic lamp. The active regions of both chips can be less than 50 microns away from a heat sink.06-28-2012
20120161192NITROGEN-DOPED TRANSPARENT GRAPHENE FILM AND MANUFACTURING METHOD THEREOF - Provided is a transparent graphene film which is prepared by maintaining the primary reduced state of a graphene oxide thin film via chemical reduction, reducing the graphene oxide thin film with chemical vapor deposition, and doping nitrogen, thereby enhancing the conductivity and enabling the control of work function and a manufacturing method thereof. According to the present disclosure, a flexible, transparent, electrical conductivity-enhanced, and work function controllable graphene film can be large area processed and produced in large quantities so that can be applied in real industrial processes by forming a graphene oxide thin film on a substrate, performing the primary chemical reduction using a reducing agent, and performing further the secondary thermal reduction and nitrogen doping by injecting hydrogen and ammonia gas through chemical vapor deposition equipment.06-28-2012
20120161190ELECTRONIC DEVICE SUBMOUNTS INCLUDING SUBSTRATES WITH THERMALLY CONDUCTIVE VIAS - A submount for an electronic device includes a substrate formed of a bulk material including first and second major surfaces on opposite sides of the substrate, a surface insulating layer on the first major surface of the substrate, and a die attach pad on the surface insulating layer. The die attach pad may be electrically insulated from the substrate by the surface insulating layer. The submount further includes a heatsink contact pad on the second major surface of the substrate, and a thermal conduction member extending from the second major surface of the conductive semiconductor substrate through the substrate toward the first major surface of the substrate. The thermal conduction member has a higher thermal conductivity than a thermal conductivity of the bulk material of the substrate.06-28-2012
20100207157LED ASSEMBLY HAVING MAXIMUM METAL SUPPORT FOR LASER LIFT-OFF OF GROWTH SUBSTRATE - Described is a process for forming an LED structure using a laser lift-off process to remove the growth substrate (e.g., sapphire) after the LED die is bonded to a submount. The underside of the LED die has formed on it anode and cathode electrodes that are substantially in the same plane, where the electrodes cover at least 85% of the back surface of the LED structure. The submount has a corresponding layout of anode and cathode electrodes substantially in the same plane. The LED die electrodes and submount electrodes are ultrasonically welded together such that virtually the entire surface of the LED die is supported by the electrodes and submount. Other bonding techniques may also be used. No underfill is used. The growth substrate, forming the top of the LED structure, is then removed from the LED layers using a laser lift-off process. The extremely high pressures created during the laser lift-off process do not damage the LED layers due to the large area support of the LED layers by the electrodes and submount.08-19-2010
20100207156Light emitting device package - Provided is a light emitting device package. The light emitting device package comprises a first conductive type package body, an insulating layer comprising an opening on the package body, a plurality of compound semiconductor layers disposed on the package body through the opening of the insulating layer, an electrode electrically connected to the plurality of compound semiconductor layers, a first metal layer electrically connected to the package body and disposed on a part of the insulating layer, and a second metal layer electrically connected to the electrode and disposed on the other part of the insulating layer.08-19-2010
20120132952LIGHT-EMITTING DIODE LAMP WITH LOW THERMAL RESISTANCE - A light-emitting diode (LED) structure with an improved heat transfer path with a lower thermal resistance than conventional LED lamps is provided. For some embodiments, a surface-mountable light-emitting diode structure is provided having an active layer deposited on a substrate directly bonded to a metal plate that is substantially exposed for low thermal resistance by positioning the metal plate at the bottom of the light-emitting diode structure. This metal plate may then be soldered to a printed circuit board (PCB) that includes a heat sink. For some embodiments of the invention, the metal plate is thermally and electrically conductively coupled through several heat conduction layers to a large heat sink that may be included in the structure.05-31-2012
20120132951LIGHT EMITTING DIODE AND METHOD FOR FABRICATING THE SAME - The disclosed light emitting diode includes a substrate provided, at a surface thereof, with protrusions, a buffer layer formed over the entirety of the surface of the substrate, a first semiconductor layer formed over the buffer layer, an active layer formed on a portion of the first semiconductor layer, a second semiconductor layer formed over the active layer, a first electrode pad formed on another portion of the first semiconductor layer, except for the portion where the active layer is formed, and a second electrode pad formed on the second semiconductor layer. Each protrusion has a side surface inclined from the surface of the substrate at a first angle, and another side surface inclined from the surface of the substrate at a second angle different from the first angle.05-31-2012
20120132949LED PACKAGE - According to one embodiment, an LED package includes mutually-separated first and second leadframes, an LED chip, and a resin body. One selected from the first leadframe and the second leadframe includes a base portion, and an extending portion. The base portion has an end surface covered with the resin body. The extending portion extends from the base portion and has an unevenness provided in a surface of the extending portion. A lower surface of the extending portion is covered with the resin body. A tip surface of the extending portion is exposed from the resin body. An exterior form of the resin body is used as an exterior form of the LED package.05-31-2012
20110180839Nickel Tin Bonding System with Barrier Layer for Semiconductor Wafers and Devices - A light emitting diode structure is disclosed that includes a light emitting active portion formed of epitaxial layers and carrier substrate supporting the active portion. A bonding metal system that predominates in nickel and tin joins the active portion to the carrier substrate. At least one titanium adhesion layer is between the active portion and the carrier substrate and a platinum barrier layer is between the nickel-tin bonding system and the titanium adhesion layer. The platinum layer has a thickness sufficient to substantially prevent tin in the nickel tin bonding system from migrating into or through the titanium adhesion layer.07-28-2011
20110180838NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING ELEMENT AND LIGHT EMITTING DEVICE IN WHICH THE NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING ELEMENT IS MOUNTED IN PACKAGE - To suppress adhesion of impurities to a semiconductor light emitting element, there is provided a nitride-based semiconductor light emitting element including: a laminated body having a first cladding layer, an active layer formed over the first cladding layer, and a second cladding layer formed over the active layer; and a dielectric film with a thickness of 3 μm or more that is formed on the side surface of the laminated body on the side where light is emitted and that covers at least a first side surface of the active layer.07-28-2011
20110180837Electronic Light Emitting Device and Method for Fabricating the Same - An electronic light emitting device includes a leadframe, a light emitting diode arranged above a first surface of the leadframe, a semiconductor chip including an electronic circuit to drive the light emitting diode, the semiconductor chip arranged above a second surface of the leadframe opposite to the first surface of the leadframe.07-28-2011
20120132950ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device includes a base plate, an organic light-emitting body formed on the base plate, a heat-transferring filling material formed around the organic light-emitting body to cover the organic light-emitting body, the heat-transferring filling material having an electrically insulating property, and a sealing plate arranged on the heat-transferring filling material.05-31-2012
20120313135MOUNTING BOARD AND STRUCTURE OF THE SAME - A mounting board including a pair of patterned electrodes, a lower surface and an upper surface opposed thereto on which a substrate of an electronic component is to be mounted, a pass-through hole penetrating through the upper surface and the lower surface, and a peripheral side surface that defines the pass-through hole. The pass-through hole includes a plurality of penetrating grooves that are cut into the mounting board and penetrate through the upper and lower surfaces. The plurality of penetrating grooves electrically split the pair of patterned electrodes. The pair of patterned electrodes is partly positioned inside the peripheral side surface, and a connection portion connecting the at least one pair of patterned electrodes and at least one pair of patterned electrodes provided on the upper surface of the substrate of the electronic component is to be disposed inside the peripheral side surface that defines the pass-through hole.12-13-2012
20120248492Optoelectronic Component - The invention relates to an optoelectronic component, having —a carrier (10-04-2012
20090057707SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor light emitting device includes: a laminated body including a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer; a first electrode provided on a first major surface of the laminated body and connected to the first semiconductor layer; and a second electrode provided on the first major surface of the laminated body and connected to the second semiconductor layer. The first electrode includes: a first region provided on the first semiconductor layer and including a first metal film; and a second region provided on the first semiconductor layer and including a second metal film, the second metal film having a higher reflectivity for light emitted from the light emitting layer than the first metal film and having a higher contact resistance with respect to the first semiconductor layer than the first metal film.03-05-2009
20090057706SET OF OHMIC CONTACT ELECTRODES ON BOTH P-TYPE AND N-TYPE LAYERS FOR GAN-BASED LED AND METHOD FOR FABRICATING THE SAME - The present disclosure relates to set of a ohmic contact electrodes on both P-type and N-type layers of a GaN-based light emitting diode (LED) and a fabricating method thereof. The materials of ohmic contact electrodes on both P-type and N-type layers of a GaN-based LED are a metal combination of Cr/Pd/Au. In one embodiment, the fabricating method comprises etching out an N-type GaN layer on an epitaxial structure on a sapphire substrate, and evaporating a P-type transparent electrode layer on the P-type GaN layer, then positioning patterns of the ohmic contact electrodes on both P-type and N-type layers, and then evaporating a metal combination of a Cr layer 50 Å to 500 Å thick, a Pd layer 300 Å to 1000 Å thick and an Au layer 3000 Å to 20000 Å thick in turn on the P-type transparent electrode layer and N-type GaN layer respectively, and then annealing electrodes of the chip, on which the Cr, Pd and Au layers are evaporated in nitrogen atmosphere for 5 minutes to 20 minutes at a temperature from 200 degrees to 450 degrees. Excellent ohmic contact characteristics and better thermal stability are obtained as well as higher oxidation resistance, thus improving the reliability of diode.03-05-2009
20090057705Semiconductor Element Mounting Substrate, Semiconductor Device Using the Same, and Method for Manufacturing Semiconductor Element Mounting Substrate - The invention provides a semiconductor element mounting substrate that, by virtue of an improvement in thermal conduction efficiency between the substrate and another member, can reliably prevent, for example, a light emitting element such as a semiconductor laser from causing a defective operation by heat generation of itself, by taking full advantage of high thermal conductivity of a diamond composite material. In the semiconductor element mounting substrate, a connecting surface to be connected with the light emitting element or the like is finished such that the number, per unit area, of at least either recesses or protrusions having a depth or height of 10 μm to 40 μm and a surface-direction diametrical size of 10 μm to 3 mm is 50/cm03-05-2009
20120168807Tri-color LED module structure - A tri-color LED module structure includes an insulating base, four terminals, a tri-color LED chip, and a cover. The insulating base has a receiving recess. The four terminals do not contact with one another, and each of them includes an inserting portion and a touching portion which are connected with each other. The touching portion is received in the receiving recess; while the inserting portion extends out of the insulating base. The four terminals and the insulating base are an integrally formed structure. The tri-color LED chip is disposed in the receiving recess of the insulating base, with four pins of the tri-color LED chip in touch with the touching portions of the four terminals, respectively. Further, the cover covers on the receiving chamber of the insulating base. Thereby, an independent red-green-blue tri-color LED loop can be constituted, making color mixing become possible by controlling various voltage combination.07-05-2012
20120168809OPTOELECTRONIC SEMICONDUCTOR BODY AND OPTOELECTRONIC SEMICONDUCTOR CHIP - An optoelectronic semiconductor body has a front face provided for the emission and/or reception of electromagnetic radiation, a rear face which lies opposite the front face and is provided for application onto a support plate, and an active semiconductor layer sequence which in the direction from the rear face to the front face includes a layer of a first conductivity type, an active layer and a layer of a second conductivity type in this sequence.07-05-2012
20120168813LIGHT EMITTING DIODE WITH A TEMPERATURE DETECTING PATTERN AND MANUFACTURING METHOD THEREOF - A light emitting diode (LED) includes a substrate, a temperature detecting pattern, and a semiconductor structure. The temperature detecting pattern is formed on the substrate. Then the semiconductor structure is formed on the temperature detecting pattern and the substrate. The semiconductor structure includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer. Per above-mentioned structural design, the temperature detecting pattern directly integrated into the LED can measure the actual temperature of PN junction with high precision.07-05-2012
20120168812SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device includes a lead frame, a semiconductor light-emitting element mounted on the top surface of the bonding region, and a case covering part of the lead frame. The bottom surface of the bonding region is exposed to the outside of the case. The lead frame includes a thin extension extending from the bonding region and having a top surface which is flush with the top surface of the bonding region. The thin extension has a bottom surface which is offset from the bottom surface of the bonding region toward the top surface of the bonding region.07-05-2012
20120168811NITRIDE-TYPE SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCTION THEREOF - A nitride-based semiconductor device includes a p-type Al07-05-2012
20120168810LEAD FRAME FOR OPTICAL SEMICONDUCTOR DEVICE, METHOD OF PRODUCING THE SAME, AND OPTICAL SEMICONDUCTOR DEVICE - A lead frame for an optical semiconductor device, having: a layer 07-05-2012
20120168808PACKAGE STRUCTURE - A package structure including a first substrate, a second substrate and a light emitting diode is provided. The first substrate has at least a first annular engaged portion. The second substrate is disposed above the first substrate and has at least a second annular engaged portion. The light emitting diode is disposed on the first substrate. The second annular engaged portion is infixed to the first annular engaged portion so as to form an airtight space. The light emitting diode is located in the airtight space.07-05-2012
20110186905OLED DEVICE WITH COVERED SHUNT LINE - The invention relates to an OLED device with a substrate (08-04-2011
20100052005SEMICONDUCTOR CHIP ASSEMBLY WITH POST/BASE HEAT SPREADER AND CONDUCTIVE TRACE - A semiconductor chip assembly includes a semiconductor device, a heat spreader, a conductive trace and an adhesive. The semiconductor device is electrically connected to the conductive trace and thermally connected to the heat spreader. The heat spreader includes a post and a base. The post extends upwardly from the base into an opening in the adhesive, and the base extends laterally from the post. The adhesive extends between the post and the conductive trace and between the base and the conductive trace. The conductive trace provides signal routing between a pad and a terminal.03-04-2010
20100052004LED Bonding Structures and Methods of Fabricating LED Bonding Structures - An LED is disclosed that includes a conductive submount, a bond pad having a total volume less than 3×1003-04-2010
20100052003Surface Mountable Chip - A surface mountable device having a circuit device and a base section. The circuit device includes top and bottom layers having a top contact and a bottom contact, respectively. The base section includes a substrate having a top base surface and a bottom base surface. The top base surface includes a top electrode bonded to the bottom contact, and the bottom base surface includes first and second bottom electrodes that are electrically isolated from one another. The top electrode is connected to the first bottom electrode, and the second bottom electrode is connected to the top contact by a vertical conductor. An insulating layer is bonded to a surface of the circuit device and covers a portion of a vertical surface of the bottom layer. The vertical conductor includes a layer of metal bonded to the insulating layer.03-04-2010
20120175670LIGHT EMITTING ELEMENT, METHOD FOR MANUFACTURING LIGHT EMITTING ELEMENT, LIGHT EMITTING ELEMENT ASSEMBLY, AND METHOD FOR MANUFACTURING LIGHT EMITTING ELEMENT ASSEMBLY - A method for manufacturing a light emitting element including the steps of (A) sequentially forming on a substrate a first compound semiconductor layer having a first conduction type, an active layer, and a second compound semiconductor layer having a second conduction type; (B) forming a plurality of point-like hole portions in a thickness direction in at least a region of the second compound semiconductor layer located outside a region to be provided with a current confinement region; and (C) forming an insulating region by subjecting a part of the second compound semiconductor layer to an insulation treatment from side walls of the hole portions so as to produce the current confinement region surrounded by the insulating region in the second compound semiconductor layer.07-12-2012
20090095973SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device has a device body made of a group III nitride semiconductor having a major surface defined by a nonpolar plane. In the device body, a contact portion with an n-type electrode includes a crystal plane different from the major surface. For example, the contact portion may include a corrugated surface. More specifically, the contact portion may include a region having a plurality of protrusions parallel to a polar plane formed in a striped manner.04-16-2009
20090095971WIRE BOND LED LIGHTING UNIT - A wire bond LED lighting unit and method for maximizing heat transfer in an LED lighting unit are disclosed, wherein the LED lighting unit includes an LED package disposed on a first carrier plate and is in thermal communication therewith. A PWB is disposed on the first carrier plate spaced from the LED package. The LED package is in electrical communication with the PWB. The first carrier plate is also in thermal communication with the PWB.04-16-2009
20120313134GLASS SUBSTRATE COATED WITH A HIGH-INDEX LAYER UNDER AN ELECTRODE COATING, AND ORGANIC LIGHT-EMITTING DEVICE COMPRISING SUCH A SUBSTRATE - A glass substrate including a first face and a second face opposing the first face, the substrate including, above the second face, an electrode layer which includes at least one electrically conducting layer, wherein the substrate includes, between the second face and the electrode layer, at least one layer of vitreous material having an index in the range from 1.7to 2.4and including from 40% to 60% by weight of bismuth oxide Bi12-13-2012
20120313133HETEROSTRUCTURE CONTAINING IC AND LED AND METHOD FOR FABRICATING THE SAME - A heterostructure contains an IC and an LED. An IC and an LED are initially provided. The IC has at least one first electric-conduction block and at least one first connection block. The IC electrically connects with the first electric-conduction block. The first face of the LED has at least one second electric-conduction block and at least one second connection block. The LED electrically connects to the second electric-conduction block. Subsequently, the first electric-conduction block and the first connection block are respectively joined to the second electric-conduction block and the second connection block. The first electric-conduction block is electrically connected with the second electric-conduction block and forms a heterostructure. The system simultaneously provides functions of heat radiation and electric communication for the IC and LED resulting in a high-density, multifunctional heterostructure.12-13-2012
20100270579LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM INCLUDING THE SAME - Provided are a light emitting device (LED) package and a lighting system including the same. The LED package comprises a package body comprising a recess in an upper portion thereof, and an LED chip provided in the recess of the package body.10-28-2010
20100270578Light Emitting Diode Chip with Overvoltage Protection - A light emitting diode chip includes a device for protection against overvoltages, e.g., an ESD protection device. The ESD protection device is integrated into a carrier, on which the semiconductor layer sequence of the light emitting diode chip is situated, and is based on a specific doping of specific regions of said carrier. By way of example, the ESD protection device is embodied as a Zener diode that is connected to the semiconductor layer sequence by means of an electrical conductor structure.10-28-2010
20100270576LIGHT EMITTING DIODE PACKAGE - There is provided a light emitting diode package, including a package body including a recess portion having a housing space and a lead frame mounted on the recess portion to be exposed; a light emitting diode chip mounted to be electrically connected to the lead frame; and a position indicator formed on the lead frame and guiding the mounting position of the light emitting diode chip.10-28-2010
20100270575AC LED package structure - An AC LED package structure includes a heat-sink slug, an AC LED module, a positive-electrode frame, a negative-electrode frame, and an insulation submount. The AC LED module is electrically connected with the positive-electrode frame and the negative-electrode frame, respectively. The insulation submount is interposed between the AC LED module and the heat-sink slug. The insulation submount is characterized by having a voltage-resistance value greater than 1000 volts. Therefore, it is possible to prevent the AC LED chip of an AC LED device from being broken through by high voltage, causing an electric shock if a human body touches the AC LED device. And moreover, the AC LED device can satisfy the requirements of a certified safety specification.10-28-2010
20110095330OPTICAL SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING OPTICAL SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING OPTICAL SEMICONDUCTOR APPARATUS - A method for manufacturing a high quality optical semiconductor device includes: (a) preparing a growth substrate; (b) forming a semiconductor layer on the growth substrate; (c) forming a metal support made of copper on the semiconductor layer by plating; (d) separating the growth substrate from the semiconductor layer to remove the growth substrate; and (e) carrying out a thermal treatment in order to even density distributions of crystal grains and voids in the copper forming the metal support.04-28-2011
20120217530Semiconductor Light Emitting Diodes Having Multiple Bond Pads and Current Spreading Structures - A light emitting device includes a diode region comprising a first face and opposing edges, and a bond pad structure comprising at least three bond pads along only one of the opposing edges of the first face.08-30-2012
20120074457SEMICONDUCTOR LIGHT EMITTING DEVICE WITH A CONTACT FORMED ON A TEXTURED SURFACE - A device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region. The semiconductor structure includes an n-contact region and a p-contact region. A cross section of the n-contact region comprises a plurality of first regions wherein portions of the light emitting layer and p-type region are removed to expose the n-type region. The plurality of first regions are separated by a plurality of second regions wherein the light emitting layer and p-type region remain in the device. The device further includes a first metal contact formed over the semiconductor structure in the p-contact region and a second metal contact formed over the semiconductor structure in the n-contact region. The second metal contact is in electrical contact with at least one of the second regions in the n-contact region.03-29-2012
20120074453PATTERNED SUBSTRATE AND LIGHT-EMITTING DIODE HAVING THE SAME - A patterned substrate for epitaxially forming a light-emitting diode includes: a top surface; a plurality of spaced apart recesses, each of which is indented downwardly from the top surface and each of which is defined by a recess-defining wall, the recess-defining wall having a bottom wall face, and a surrounding wall face that extends from the bottom wall face to the top surface; and a plurality of protrusions, each of which protrudes upwardly from the bottom wall face of the recess-defining wall of a respective one of the recesses. A light-emitting diode having the patterned substrate is also disclosed.03-29-2012
20120074456LIGHT EMITTING DEVICE PACKAGE - A light emitting device package is disclosed. The disclosed light emitting device package includes a body comprising a cavity, and a recess formed at a bottom surface of the body, first and second lead frames mounted in the body, and a light source electrically connected with the first and second lead frames, wherein at least one of the first and second lead frames has a heat sink which is extended from a portion of the first or the second lead frames, and is disposed in the recess. The body includes a first coupler formed on at least a portion of the body. The heat sink includes a second coupler, to which the first coupler is coupled.03-29-2012
20120074455LED PACKAGE STRUCTURE - An LED package structure includes a heat conductive plate defining a concave groove therein, an LED die received in the concave groove, an eutectic layer sandwiched between the heat conductive plate and the substrate, a transparent encapsulant encapsulating the LED die on the heat conductive plate. The heat conductive plate forms an electrode circuit layer on the heat conductive plate around the concave groove. The LED die forms electrodes electrically connected with the electrode circuit layer. An electrically insulating heat conduction grease filled around the substrate and the eutectic layer.03-29-2012
20120074454OPTOELECTRIC DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method is described for manufacturing an optoelectric device comprising the steps of 03-29-2012
20120074452LIGHT EMITTING DEVICE PACKAGE AND METHOD OF MANUFACTURING THE SAME - A light emitting device package includes a base, a light emitting element, a mask, metal wires, an encapsulating layer and a cover layer. The base has a first surface bearing electrical structure thereon and an opposite second surface. The mask is arranged on the first surface to define a space receiving the light emitting element. Two openings are defined in the mask. The light emitting element has two pads exposed to an outside through the two openings respectively. The metal wires electrically connect the pads and the electrical structures. The encapsulating layer is filled in the space and two through holes in the base and encapsulates the light emitting element. The encapsulating layer is separated from the metal wires. The cover layer covers and protects the mask and the metal wires. A method of manufacturing the package is also provided.03-29-2012
20120074451LEAD FRAME STRUCTURE, A PACKAGING STRUCTURE AND A LIGHTING UNIT THEREOF - A lead frame structure, a packaging structure and a lighting unit are disclosed. The lead frame structure includes at least two first lead frame units having a space therebetween, and the two first lead frame units are arranged in an opposite manner. Each the first lead frame unit has a first conducting portion, a second conducting portion, and a first connection portion between the first and the second conducting portions. Moreover, the first connection portion has at least two grooves on a surface thereof.03-29-2012
20120248489Light-Emitting Device and Manufacturing Method Thereof - A highly reliable light-emitting device, a light-emitting device which can be formed without using a metal mask, or a light-emitting device in which a voltage drop due to the resistance of an upper electrode layer is suppressed is provided. When an EL film is formed over a conductive connection electrode layer having an uneven shape, a surface of the conductive connection electrode layer cannot be fully covered. Subsequently, a conductive film to be an upper electrode layer of an EL element is formed thereover; thus, a region in contact with the conductive connection electrode layer is formed. Further, a structure is provided in a position on a counter substrate, which overlaps with the conductive connection electrode layer, and then substrates are bonded to each other so that the structure is physically in contact with the upper electrode layer over the conductive connection electrode layer.10-04-2012
20100006885ARRANGEMENT OF ELECTRODES FOR LIGHT EMITTING DEVICE - A light emitting diode includes an n-GaN layer on a substrate, an active layer exposing a part of the n-GaN layer, a p-GaN layer on the active layer, a cathode contacting the exposed n-GaN layer and extending from one side of the active layer toward the other side, and an anode formed on the p-GaN layer and including a plurality of sub-electrodes spaced apart from both sides of the cathode and an edge of the active layer at the same distance.01-14-2010
20100244084LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM INCLUDING THE SAME - A light emitting device (LED), an LED package, and a lighting system including the LED package are provided. The light emitting device (LED) may include a light emitting structure, a carrier injection layer, and an electrode layer. The light emitting structure may include a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. The carrier injection layer may be positioned over the light emitting structure, and the electrode layer may be positioned over the carrier injection layer.09-30-2010
20100244083Light-Emitting Devices - Light-emitting devices are provided, the light-emitting devices include a light-emitting structure layer having a first conductive layer, a light-emitting layer and a second conductive layer sequentially stacked on a first of a substrate, a plurality of seed layer patterns formed apart each other in the first conductive layer; and a plurality of first electrodes formed through the substrate, wherein each of the first electrodes extends from a second side of the substrate to each of the seed layer patterns.09-30-2010
20100244082QUASI-VERTICAL LIGHT EMITTING DIODE - A quasi-vertical light emitting device is provided. According to one embodiment of the present invention, the quasi-vertical light emitting diode includes a sapphire substrate; a plurality of semiconductor layers grown on the sapphire substrate, the plurality of semiconductor layers including an n-GaN layer, an active layer, and a p-GaN layer; a plurality of holes etched in the plurality of semiconductor layers, each of the plurality of holes etched to the sapphire substrate, and a plurality of sapphire holes in the sapphire substrate, each of the plurality of holes aligned with one of the plurality of sapphire holes to form hole walls, the hole walls and bottom deposited with an n-metal and each of the plurality of holes filled with another metal to form a n-electrode contact; an n-mesa in the active layer and the p-GaN layer, the n-mesa deposited with an n-metal and a passivation layer grown over the n-metal; and a p-metal layer deposited on the p-GaN layer, and a p-electrode bonded to the p-metal.09-30-2010
20100244081LIGHTING DEVICE USING HIGH POWER LED WITH MULTIPLE LEAD - The lighting device mainly contains a first material, a second material, at a light generation chip, and multiple metallic leads. The metallic leads are sandwiched between the first and second materials, and arranged in a radial manner around the indentation or the raised stand. The center of the first material has an obconical through channel and the center of the second material has either an indentation or a raised stand. The light generation chips are positioned in the center of the second material. High thermal conducting insulation paste is provided between the first material, the metallic leads, and the second material so that they are electrical insulated from each other. The present invention could achieve versatile color combinations and high brightness under superior heat dissipation effect, and could be applied in various types of packaging and welding.09-30-2010
20090065799LIGHT EMITTING DIODE PACKAGE - The present invention relates to a light emitting diode package, and provides a light emitting diode package employing a thermoelectric element therein. The light emitting diode package of the present invention is constructed such that the thermoelectric element is coupled to a housing or formed of a substrate itself so as to directly dissipate heat generated from a light emitting chip. Thus, the heat generated from the light emitting chip can be efficiently dissipated from the interior of the package to the outside, without an additional heat dissipation means. In addition, an external heat sink may be coupled to the thermoelectric element to more efficiently dissipate the heat from the light emitting chip.03-12-2009
20120187447Part having a First and a Second Substrate and Method for the Production Thereof - A unit is provided which comprises a first substrate (07-26-2012
20120223357Semiconductor Light-Emitting Device - The present disclosure relates to a semiconductor light-emitting device, which includes: a first semiconductor layer having first conductivity; a second semiconductor layer having second conductivity different from the first conductivity; an active layer disposed between the first semiconductor layer and the second semiconductor layer and generating light by recombination of electrons and holes; a first pad electrode electrically connected to the second semiconductor layer; a high-resistance body partially disposed on the second semiconductor layer; and a branch electrode disposed on the second semiconductor layer, partially extending over the high-resistance body, and electrically connected to the first pad electrode.09-06-2012
20120187446SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor light emitting device includes first and second conductive layers, a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting part. The second semiconductor layer is provided between the first conductive layer and the first semiconductor layer. The light emitting part is provided between the first and second semiconductor layers. The second conductive layer is in contact with the second semiconductor layer and the first conductive layer between the second semiconductor layer and the first conductive layer. The first and second conductive layers are transmittable to light emitted from the light emitting part. The first conductive layer includes a polycrystal having a first average grain diameter. The second conductive layer includes a polycrystal having a second average grain diameter of 150 nanometers or less and smaller than the first average grain diameter.07-26-2012
20120187445TEMPLATE, METHOD FOR MANUFACTURING THE TEMPLATE, AND METHOD FOR MANUFACTURING VERTICAL TYPE NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE USING THE TEMPLATE - Disclosed is a method for manufacturing a template. The method includes growing a first nitride layer containing a Group-III material on a substrate; forming a plurality of etch barriers having different etching characteristics from the first nitride layer on the first nitride layer; forming a pillar-shaped nano structure by etching the first nitride layer in a pattern of the etch barriers using a chloride-based gas; and forming the nitride buffer layer having a plurality of voids formed therein by growing a second nitride layer on top of the nano structure. A method for manufacturing a nitride-based semiconductor light emitting device using the template is also disclosed.07-26-2012
20120187444TEMPLATE, METHOD FOR MANUFACTURING THE TEMPLATE AND METHOD FOR MANUFACTURING VERTICAL TYPE NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE USING THE TEMPLATE - Disclosed herein is a method for manufacturing a template. The method includes growing a first nitride layer on a substrate; etching a top surface of the first nitride layer by supplying a chloride-based etching gas thereto; forming a plurality of first voids by growing a second nitride layer on the top surface of the first nitride layer; etching a top surface of the second nitride layer by supplying the etching gas thereto; and forming a plurality of second voids by growing a third nitride layer on the top surface of the second nitride layer. A method for manufacturing a nitride-based semiconductor light emitting device using the template is also disclosed. As a result, stress between lattices and dislocation defects are reduced by a plurality of voids formed in a nitride buffer layer, thereby improving quality of nitride layers grown in a template. In the case where a light emitting device is manufactured using the template, it is possible to improve workability of the manufacturing process and to enhance luminous efficacy of the light emitting device.07-26-2012
20120256228DIE-BONDED LED - An LED includes a first intermetallic layer, a first metal thin film layer, an LED chip, a substrate, a second metal thin film layer, and a second intermetallic layer. The first metal thin film layer is located on the first intermetallic layer. The LED chip is located on the first metal thin film layer. The second metal thin film layer is located on the substrate. The second intermetallic layer is located on the second metal thin film layer, and the first intermetallic layer is located on the second intermetallic layer. Materials of the first and the second metal thin film layer are selected from a group consisting of Au, Ag, Cu, and Ni. Materials of the intermetallic layers are selected from a group consisting of a Cu—In—Sn intermetallics, an Ni—In—Sn intermetallics, an Ni—Bi intermetallics, an Au—In intermetallics, an Ag—In intermetallics, an Ag—Sn intermetallics, and an Au—Bi intermetallics.10-11-2012
20120223359SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME - Provided is a semiconductor light emitting device. The semiconductor light emitting device includes: a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second conductive semiconductor layers; an insulation layer on the second conductive semiconductor layer and including a first hole therein; a second electrode on the second conductive semiconductor layer; and a first electrode on the insulation layer and including a connection portion electrically connected to the first conductive semiconductor layer. The second electrode includes a plurality of line patterns. The connection portion of the first electrode is disposed between the plurality of line patterns of the second electrode and is disposed in the first hole of the insulation layer.09-06-2012
20120223360Optoelectronic Component and Method for Producing an Opto-Electronic Component - An opto-electronic component has a carrier element (09-06-2012
20120223358METHOD OF TUNING WORK FUNCTION OF METAL NANOSTRUCTURE-BASED TRANSPARENT CONDUCTOR - The present disclosure relates to methods for tuning the work function of a metal nanostructure-based conductive film by forming a dipole surface layer on individual metal nanostructures.09-06-2012
20120223356SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to an embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type, a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device includes a first layer, a first electrode, a second electrode and a third electrode. The first layer is provided on a surface of the second semiconductor layer opposite to the light emitting layer and including conductive oxide. The first electrode is in contact with a part of the first layer and includes a reducible element for reducing the conductive oxide. The second electrode includes a first portion covering the first electrode and a second portion being in contact with the first layer, and the third electrode is electrically connected to the first semiconductor layer.09-06-2012
20120223355SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor light emitting device includes a structure, a first electrode layer, and a second electrode layer. The structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The first electrode layer is provided on the first semiconductor layer side of the structure. The first electrode layer is made of metal and contains a portion contacting the first semiconductor layer. The second electrode layer is provided on the second semiconductor layer side of the structure. The second electrode layer has a metal portion with a thickness of not less than 10 nanometers and not more than 50 nanometers, and a plurality of openings piercing the metal portion, each of the openings having an equivalent circle diameter of not less than 10 nanometers and not more than 5 micrometers.09-06-2012
20110101409LED Lamp Package with Integral Driver - A lamp package includes a leadframe. At least one light emitting diode is mechanically and electrically coupled to the leadframe. At least one electronic component is also mechanically and electrically coupled to the leadframe and electrically coupled to the light emitting diode, the electronic component controlling the supply of electrical power to the light emitting diode. At least one interconnect is electrically coupled to the leadframe. A formed structure is joined to the leadframe, the formed structure enclosing at least a portion of the leadframe.05-05-2011
20120256227Light Emitting Device and Method for Manufacturing Thereof - A conductive layer serving as an auxiliary wiring is formed under a first electrode with a first insulating layer interposed therebetween, and the conductive layer and a second electrode are electrically connected to each other through an opening in the first insulating layer and the first electrode. A second insulating layer is formed over a sidewall of the opening so that the first electrode is not directly in contact with the second electrode in the opening. An EL layer is formed by evaporation in a state where a deposition target substrate is inclined to an evaporation source, so that the second insulating layer serves as an obstacle and a region where the EL layer is not formed by the evaporation and the conductive layer is exposed is formed in part of the opening in a self-aligned manner.10-11-2012
20120228666Optoelectronic Module - An optoelectronic module has at least one carrier with at least one contact location. A semiconductor chip emitting radiation includes a first contact surface and a second contact surface. An electrically insulating layer has a first and a second recess. The first contact surface is disposed on the side of the semiconductor chip emitting radiation facing away from the carrier. The electrically insulating layer is applied at least in places to the carrier. The semiconductor chip includes the first recess in the area of the first contact surface and the second recess in the area of the contact location. A electrically conductive conductor structure is disposed on the electrically insulating layer. The first contact surface electrically contacts the contact location of the carrier. The electrically insulating layer is formed predominately from a ceramic material.09-13-2012
20120228667STRENGTHENED COUNTER ELECTRODE OF ELECTROLUMINESCENT DEVICES - The present invention provides an electroluminescent device comprising a substrate (1) and stacked thereon in the order of mention a first transparent electrode (2), an electroluminescent stack (3), and a second electrode (4). Furthermore, the electroluminescent device comprises at least one additional hard layer (5) that is located underneath the second electrode and/or on top of the second electrode and that has a hardness larger than the hardness of the second electrode. Methods for the production of such electroluminescent devices are likewise provided.09-13-2012
20120228664NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - The present invention provides a nitride semiconductor light emitting device having an n-electrode that has an Au face excellent in ohmic contacts to an n-type nitride semiconductor and excellent in mounting properties, and a method of manufacturing the same. The nitride semiconductor light emitting device uses an n-electrode having a three-layer laminate structure that is composed of a first layer containing aluminum nitride and having a thickness not less than 1 nm or less than 5 nm, a second layer containing one or more metals selected from Ti, Zr, Hf, Mo, and Pt, and a third layer made of Au, from the near side of the n-type nitride semiconductor in order of mention. The n-electrode thus formed is then annealed to obtain ohmic contacts to the n-type nitride semiconductor.09-13-2012
20120228663Optoelectronic Component Having a Semiconductor Body, an Insulating Layer, and a Planar Conductor Structure, and Method for the Production thereof - An optoelectronic component comprising at least one semiconductor body having a radiation exit side, said semiconductor body being arranged by a side lying opposite the radiation exit side on a substrate, wherein at least one electrical connection region, on which a metallization bump is arranged, is arranged on the radiation exit side, the semiconductor body is at least partly provided with an insulating layer, wherein the metallization bump projects beyond the insulating layer, and at least one planar conductor structure is arranged on the insulating layer for the purpose of making contact with the semiconductor body in planar fashion, said conductor structure being electrically conductively connected to the electrical connection region by the metallization bump.09-13-2012
20110121353OPTOELECTRONIC ARCHITECTURE HAVING COMPOUND CONDUCTING SUBSTRATE - Optoelectronic device modules, arrays optoelectronic device modules and methods for fabricating optoelectronic device modules are disclosed. The device modules are made using a starting substrate having an insulator layer sandwiched between a bottom electrode made of a flexible bulk conductor and a conductive back plane. An active layer is disposed between the bottom electrode and a transparent conducting layer. One or more electrical contacts between the transparent conducting layer and the back plane are formed through the transparent conducting layer, the active layer, the flexible bulk conductor and the insulating layer. The electrical contacts are electrically isolated from the active layer, the bottom electrode and the insulating layer.05-26-2011
20110121352Organic Photoelectric Device - An organic photoelectric device includes a substrate, a base electrode, an electrode terminal, a roof electrode, an organic functional layer, and a self-supporting cover member. The base electrode is configured above a first surface of the substrate, and the electrode terminal is accessible from above the first surface of the substrate. The self-supporting cover member serves to encapsulate the organic functional layer, which is arranged between the substrate and the self-supporting cover member, the self-supporting cover member being formed from conductive material or being coated with a conductive material on a side facing the substrate. The conductive material is locally coupled, in an electrically conductive manner, to the base electrode or the roof electrode at laterally distributed locations, and is further coupled to the electrode terminal in an electrically conductive manner.05-26-2011
20110121351Organic light emitting diode device and method of manufacturing the same - An organic light emitting diode (OLED) device and a method of manufacturing the same, the OLED device including a substrate, a first electrode on the substrate, a buffer layer on the first electrode, an emission layer on the buffer layer, and a second electrode on the emission layer, wherein the buffer layer includes a transparent conductive oxide, and a metal or metal oxide having a work function lower than a work function of the transparent conductive oxide.05-26-2011
20110121349LIGHT-EMITTING DIODE AND MANUFACTURING METHOD THEREOF - A light-emitting diode (LED) and manufacturing method thereof are disclosed. The LED includes a transparent substrate, a plurality of transparent conductive layers, a plurality of metal circuits, and a LED chip. The LED chip is suitable for emitting a light and a portion of the light emits toward the transparent substrate. The manufacturing method of LED includes the following steps. First, a transparent conductive layer is formed on the transparent substrate. Next, a conductive pattern is fromed by etching transparent conductive layer. The intersection metal circuit is formed by disposing the metal on a portion of the transparent conductive layer. Finally, the LED chip is disposed on the metal circuit so tat the LED chip is electrically connected to the metal circuit.05-26-2011
20110121350ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing an organic light-emitting display apparatus contemplates preparing a first substrate, preparing a second substrate, forming a first sealant and a second sealant on the second substrate, the first sealant having a height different from a height of the second sealant, injecting a filling material into a space surrounded by the first sealant and the second sealant, adhering the first substrate to the second substrate, and radiating an energy beam onto at least one of the first sealant and the second sealant.05-26-2011
20110121348SEMICONDUCTOR LIGHT-EMITTING DEVICES - A semiconductor light-emitting device includes a substrate having an upper surface and a plurality of bumps positioned on the upper surface in a periodic manner, a first conductive type semiconductor layer positioned on the substrate, a light-emitting structure positioned on the first conductive type semiconductor layer, and a second conductive type semiconductor layer positioned on the light-emitting structure. The first conductive type semiconductor layer includes a plurality of protrusions each facing a portion of the substrate between the bumps, the protrusions are positioned in a ring manner at a peripheral region of the first conductive type semiconductor layer, and the protrusions are spaced apart from the bumps.05-26-2011
20110121347SYSTEMS AND METHODS FOR MANAGING HEAT FROM AN LED - Light-emitting devices and particularly light-emitting device assemblies that include light-emitting diodes (LEDs) as light sources are described. The methods and systems of at least some of the embodiments described herein increase the removal of thermal energy generated by the light-emitting devices.05-26-2011
20080296605Light emitting device - A light emitting device includes a resin case including a concave portion with a reflector portion surrounding a light emitting element, a first lead and a second lead that are formed of a metal, exposed at a bottom of the concave portion of the case, and disposed away from each other in a predetermined direction, and a resin sealing material filled in the concave portion. The first lead includes a light emitting element mounting portion, a first wire connection portion, a first bleed-out preventing notch, and an opposite notch. The second lead includes a protective device mounting portion, a second wire connection portion, and a second bleed-out preventing notch. The first lead and the second lead are arranged such that, in the predetermined direction, the light emitting element mounting portion is opposed to the second bleed-out preventing notch, the first wire connection portion is opposed to the protective device mounting portion, and the opposite notch is opposed to the second wire connection portion.12-04-2008
20080296604LIGHT-EMITTING DIODE LEAD FRAME AND MANUFACTURE METHOD THEREOF - The invention discloses an LED lead frame and the manufacture method thereof. First, a press-formed strip including a guide strip, a first metal frame, and a second metal frame is provided. The first metal frame and the second metal frame are connected to the guide strip and are connected to each other via a connection part. The first metal frame includes a first region. The second metal frame includes a second region. The connection part includes a third region. Then, the press-formed strip is clipped by a fixture such that the first region and the second region are exposed. Then, the press-formed strip is put in an electroplate solution and an electroplate layer is plated on the first region and the second region, but not on the third region. At last, the fixture is removed. The LED lead frame is then obtained.12-04-2008
20100327309VOLTAGE-OPERATED LAYERED ARRANGEMENT - A voltage-operated layered arrangement comprising a substrate (12-30-2010
20080296603Light emitting device with high light extraction efficiency - An exemplary solid-state light emitting device includes a substrate, a light emitting structure, a first electrode and a second electrode have opposite polarities with each other. The light emitting structure is formed on the substrate and includes a first-type semiconductor layer and a second-type semiconductor layer. The first electrode is electrically connected with the first-type semiconductor layer. The second electrode includes a transparent conductive layer formed on the second-type semiconductor layer and a metallic conductive layer formed on a region of the transparent conductive layer and in electrical contact therewith. Any point on the region is no more than 300 micrometers from a nearest part of the metallic conductive layer, and an exposed portion uncovered by the metallic conductive layer of the region has an area of at least 80% of a total area of the transparent conductive layer.12-04-2008
20120261711ELECTRONIC DEVICE CONTACT STRUCTURES - Electronic devices involving contact structures, and related components, systems and methods associated therewith are described. The contact structures are particularly suitable for use in a variety of light-emitting devices, including LEDs.10-18-2012
20120261710ORGANIC LIGHT EMITTING DIODE LIGHTING APPARATUS - An organic light emitting diode (OLED) lighting apparatus includes a light emitting panel including an organic light emitting diode, a housing for housing the light emitting panel, a cover coupled to the housing and covering a front-side edge of the light emitting panel, a plurality of pins disposed between the housing and the light emitting panel and supporting an edge of the light emitting panel, and at least one contact bar disposed between the plurality of pins and a back-side edge of the light emitting panel.10-18-2012
20120261712Optoelectronic Device with Homogeneous Light Intensity - An optoelectronic device comprising: a first electrical supply conductor (10-18-2012
20120319159SUBSTRATE FOR LIGHT-EMITTING ELEMENT, METHOD FOR MANUFACTURING THE SAME AND LIGHT-EMITTING DEVICE - There is provided a substrate for light-emitting element, including a mounting surface on which a light-emitting element is to be mounted, the mounting surface being one of two opposed main surfaces of the substrate. The substrate of the present invention is provided with a protection element for the light-emitting element, the protection element comprising a voltage-dependent resistive layer embedded in a body of the substrate, and comprising a first electrode and a second electrode each of which is in connection with the voltage-dependent resistive layer wherein the light-emitting element is to be mounted such that it is positioned in an overlapping relation with the voltage-dependent resistive layer.12-20-2012
20120319157PHOTOELECTRIC CONVERSION DEVICE - To provide a heterojunction photoelectric conversion device including passivation layers for reducing surface defects of a silicon substrate. The photoelectric conversion device includes a first silicon semiconductor layer which is in contact with one surface of a single crystal silicon substrate; a second silicon semiconductor layer which is in contact with the first silicon semiconductor layer; a third silicon semiconductor layer which is in contact with the other surface of the single crystal silicon substrate; and a fourth silicon semiconductor layer which is in contact with the third silicon semiconductor layer. Further, the fluorine concentration in the first silicon semiconductor layer and the third silicon semiconductor layer is lower than or equal to 1×1012-20-2012
20120319158LED Light Emitting Module and Manufacturing Method thereof - An LED light-emitting module and a manufacturing method thereof are provided. The LED light-emitting module comprises a substrate provided with at least one LED core, wherein the substrate has an interlayer made of ceramic materials and coated with copper foils at two sides; the copper foil at one side of the interlayer is etched to form at least one soldering pad and a conductor; the number of the soldering pads is equal to that of the LED cores; each LED core is fixed on one soldering pad; and one pole of the LED core is welded on the soldering pad while the other pole is connected with an adjacent soldering pad or the conductor through a gold thread.12-20-2012
20110037094SEMICONDUCTOR CHIP ASSEMBLY WITH BUMP/BASE HEAT SPREADER AND CAVITY IN BUMP - A semiconductor chip assembly includes a semiconductor device, a heat spreader, a conductive trace and an adhesive. The heat spreader includes a bump, a base and a flange. The conductive trace includes a pad and a terminal. The semiconductor device extends into a cavity in the bump, is electrically connected to the conductive trace and is thermally connected to the bump. The bump extends from the base into an opening in the adhesive, the base extends vertically from the bump opposite the cavity and the flange extends laterally from the bump at the cavity entrance. The conductive trace is located outside the cavity and provides signal routing between the pad and the terminal.02-17-2011
20110037093LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING ELEMENT FABRICATION METHOD - According to an aspect of the invention, a light-emitting element includes a semiconductor layer, a gold electrode layer, an insulator, a barrier metal layer, and an aluminum wiring layer. The gold electrode layer is formed on a part of the semiconductor layer and is electrically connected to the semiconductor layer. The gold electrode layer being made of metal including gold. The insulator film covers the semiconductor layer and has a contact opening corresponding to the gold electrode layer. The barrier metal layer covers a an upper face of the gold electrode layer and the insulator film in a vicinity of the contact opening. The aluminum wiring layer is formed on the barrier metal layer and electrically connected to the barrier metal layer.02-17-2011
20120299052SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND OPTICAL DEVICE - A semiconductor light-emitting device capable of inhibiting a semiconductor light-emitting element from deterioration and capable of inhibiting the size of a package from enlargement is obtained. The semiconductor light-emitting device includes a semiconductor light-emitting element and a package sealing the semiconductor light-emitting element. The package includes a base portion mounted with the semiconductor light-emitting element and a cap portion mounted on the base portion for covering the semiconductor light-emitting element. At least either one of the base portion and the cap portion is made of a mixture of resin and a gas absorbent.11-29-2012
20120299051LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE HAVING THE SAME - Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer, an electrode electrically connected to the first conductive semiconductor layer, a reflective layer under the second conductive semiconductor layer, a protective layer disposed around a lower surface of the second conductive semiconductor layer, and a buffer layer disposed on at least one of top and lower surfaces of the protective layer.11-29-2012
20120299050ELECTRO-OPTICAL DEVICE, ELECTRODE THEREFORE, AND METHOD AND APPARATUS OF MANUFACTURING AN ELECTRODE AND THE ELECTRO-OPTICAL DEVICE PROVIDED THEREWITH - The present invention relates to an electro-optical device provided with an electrode (11-29-2012
20120299049Optoelectronic Semiconductor Chip and Method for Adapting a Contact Structure for Electrically Contacting an Optoelectronic Semiconductor Chip - An optoelectronic semiconductor chip has a first semiconductor functional region with a first terminal and a second terminal. A contact structure electrically contacts the optoelectronic semiconductor chip. The contact structure is connected electrically conductively to the first semiconductor functional region. The contact structure has a disconnectable conductor structure. An operating current path is established via the first terminal of the first semiconductor functional region and the second terminal if the conductor structure is not disconnected. This path is interrupted if the conductor structure is disconnected. Alternatively, an operating current path is established via the first terminal of the first semiconductor functional region and the second terminal if the conductor structure is disconnected. The conductor structure connects the first terminal to the second terminal and short circuits the first semiconductor functional region if the conductor structure is not disconnected.11-29-2012
20120299048SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING CURRENT BLOCKING LAYER - There is provided a semiconductor light emitting device including: a semiconductor light emitting laminate including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed therebetween; a first electrode having at least one bonding pad formed on a portion of an upper surface of the first conductive semiconductor layer; a second electrode having an ohmic contact layer formed on the second conductive semiconductor layer; and a current blocking layer between the second conductive semiconductor layer and the ohmic contact layer having a plurality of patterns formed thereon, the plurality of patterns being arrayed such that intervals between patterns adjacent to a region overlapped with the bonding pad are smaller an interval between patterns of another regions.11-29-2012
20120299047LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHT UNIT - Provided are a light emitting device, a light emitting device package, and a light unit. The light emitting device includes: a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer; a first electrode electrically connected to the first conductive semiconductor layer; and a second electrode electrically connected to the second conductive semiconductor layer. A surface of the light emitting structure has a plurality of first sides and second sides having curvatures in respectively different directions, which are alternately disposed.11-29-2012
20120299046SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a light emitting layer, a second semiconductor layer of a second conductivity type, a first electrode layer and a second electrode layer. The first semiconductor layer includes a first portion and a second portion thicker than the first portion. The second portion includes a side surface rising from a major surface of the first portion. The light emitting layer is provided on the second portion. The second semiconductor layer is provided on the light emitting layer. The first electrode layer is provided along the major surface of the first portion and is in contact with the side surface of the second portion. The second electrode layer is provided on the second semiconductor layer.11-29-2012
20120267677SEMICONDUCTOR LIGHT-EMITTING DEVICE - Embodiments relate to a semiconductor light-emitting structure.10-25-2012
20120267674MOUNTING SUBSTRATE, LIGHT EMITTING BODY, AND METHOD FOR MANUFACTURING MOUNTING SUBSTRATE - A mounting substrate configured to mount a functional element thereon is provided. The mounting substrate includes an insulating base having a flat surface portion and a bank portion protruding from the flat surface portion and dividing the flat surface portion into a plurality of regions; and a conductor layer configured to electrically connect the functional element thereto. The conductor layer is adhered from the flat surface portion to a side surface of the bank portion on the base, and the regions divided by the bank portion are filled with the conductor layer.10-25-2012
20120267673SEMICONDUCTOR LIGHT-EMITTING ELEMENT, ELECTRODE STRUCTURE AND LIGHT-EMITTING DEVICE - It is an object to improve joining properties of electrodes and reliability of the electrodes for supplying electrical power to a semiconductor. The semiconductor light-emitting element includes an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a transparent conductive layer, a p-electrode formed on the transparent conductive layer and an n-electrode formed on the n-type semiconductor layer. The p-electrode includes a p-side second metal layer composed of a metallic material containing Au and provided to be exposed to the outside and a p-side first metal layer composed of a metallic material containing Au with hardness higher than that of the metallic material composing the p-side second metal layer, the p-side first metal layer being provided closer to the transparent conductive layer than the p-side second metal layer along the p-side second metal layer.10-25-2012
20120267672Semiconductor Light-Emitting Device - The present disclosure relates to a semiconductor light-emitting device, which includes: a plurality of semiconductor layers composed of a first semiconductor layer, a second semiconductor layer, and an active layer; a first electrode disposed on the second semiconductor layer; a high-resistance body interposed between the second semiconductor layer and the first electrode; and a light-transmitting conductive film having an opening through which the high-resistance body is exposed, the first electrode being brought into contact with the light-transmitting conductive film, which is disposed on the high-resistance body, and the high-resistance body, which is exposed through the opening.10-25-2012
20110227126ELECTRONICS DEVICE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME - It is an object of the present invention to provide a high reliable EL display device and a manufacturing method thereof by shielding intruding moisture or oxygen which is a factor of deteriorating the property of an EL element without enlarging the EL display device.09-22-2011
20110227125Organic Semiconductor Element - By introducing new concepts into a structure of a conventional organic semiconductor element and without using a conventional ultra thin film, an organic semiconductor element is provided which is more reliable and has higher yield. Further, efficiency is improved particularly in a photoelectronic device using an organic semiconductor. Between an anode and a cathode, there is provided an organic structure including alternately laminated organic thin film layer (functional organic thin film layer) realizing various functions by making an SCLC flow, and a conductive thin film layer (ohmic conductive thin film layer) imbued with a dark conductivity by doping it with an acceptor and a donor, or by the like method.09-22-2011
20110227122SEMICONDUCTOR CHIP ASSEMBLY WITH POST/BASE HEAT SPREADER WITH THERMAL VIA - A semiconductor chip assembly includes a semiconductor device, a heat spreader, a conductive trace, an adhesive and a support layer. The heat spreader includes a post, a base, an underlayer and a thermal via. The conductive trace includes a pad and a terminal. The semiconductor device is electrically connected to the conductive trace and thermally connected to the heat spreader. The post extends upwardly from the base into an opening in the adhesive, the base extends laterally from the post, the support layer is sandwiched between the base and the underlayer and the thermal via extends from the base through the support layer to the underlayer. The conductive trace provides signal routing between the pad and the terminal.09-22-2011
20110227121SEMICONDUCTOR LIGHT EMMITING DEVICE - According to one embodiment, in a semiconductor light emitting device, a first electrode is provided on a first surface of the semiconductor laminated body including a light emitting layer. A joint metal layer is provided on a second surface of the semiconductor laminated body opposed to the first surface of the semiconductor laminated body. A bonding metal layer covers a first surface of the joint metal layer on a side opposite to the semiconductor laminated body and is provided on a side of the second surface of the semiconductor laminated body. A substrate provided with a second electrode is bonded to the bonding metal layer. A layer having an etching resistance property to an etchant for etching the semiconductor laminated body is formed on a side of the surface of the bonding metal layer facing to the semiconductor laminated body.09-22-2011
20110127568LATERAL SEMICONDUCTOR LIGHT EMITTING DIODES HAVING LARGE AREA CONTACTS - Light emitting diodes include a diode region having first and second opposing faces that include therein an n-type layer and a p-type layer, an anode contact that ohmically contacts the p-type layer and extends on the first face, and a cathode contact that ohmically contacts the n-type layer and also extends on the first face. The anode and cathode contacts extend on the first face to collectively cover substantially all of the first face. A small gap may be provided between the contacts.06-02-2011
20100244085LIGHT EMITTING DEVICE - A light emitting device including a light emitting chip and a magnetic material is provided. The light emitting chip includes a first doped semiconductor layer, a second doped semiconductor layer, and a light emitting semiconductor layer disposed between the first doped semiconductor layer and the second doped semiconductor layer. The magnetic material is disposed beside the light emitting chip, wherein the magnetic material is not disposed on a conducting path of a current causing the light emitting chip to emit light.09-30-2010
20120080714LIGHT-EMITTING DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS - The present invention provides a light-emitting device including a light-emitting element over a substrate, the light-emitting element is partitioned from an adjacent light-emitting element by a partition wall, the light-emitting element comprising a first electrode, a layer formed over the first electrode, a light-emitting layer formed over the layer and a second electrode formed over the light-emitting layer, the layer contains an inorganic compound, an organic compound and a halogen atom, the partition wall contains the inorganic compound and the organic compound, and the layer. The light-emitting device provides higher reliability and fewer defects.04-05-2012
20120080713LIGHT-EMITTING DEVICE AND LIGHTING DEVICE PROVIDED WITH THE SAME - A light-emitting device capable of ensuring an electric connection between a light-emitting element and an electrode without generating any problem in practical use, by both connecting methods with a solder and a connector, and a lighting device provided with the light-emitting device are provided. The light-emitting device according to the present invention has a plurality of LED chips, and a soldering electrode land and a connector connecting electrode land electrically connected to the chips, on a ceramic substrate. The soldering electrode land is formed of a first conductive material having a function to prevent diffusion to a solder, and the connector connecting electrode land is formed of a second conductive material having a function to prevent oxidation.04-05-2012
20120080712METHOD FOR PRODUCING COMPOUND SEMICONDUCTOR LIGHT-EMITING DEVICE - It is intended to provide a production method that enables at least one of improvement in transparency, reduction in sheet resistance, homogenization in planar distribution of sheet resistance, and reduction in contact resistance related to a contact layer regarding a transparent conductive oxide film included in a compound semiconductor light-emitting device.04-05-2012
20120080711Light emitting device - A light emitting device comprises a case having a space therein, the space defined by an inner bottom surface and an inner side surface of the case, a lead frame housed in the space, and having a bending portion bent along the inner side surface of the case, and a light emitting element electrically connected to the lead frame, wherein a rear surface of the bending portion is embedded in the case and a front surface of the bending portion is exposed from the inner side surface of the case so as to oppose the light emitting element, and wherein a projecting portion projected from the inner bottom surface and inclined to the inner side surface of the case is formed on the inner side surface of the case.04-05-2012
20110260206LIGHT EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF, AND LIGHT EMITTING DEVICE USING THE LIGHT EMITTING ELEMENT - A light-emitting element has a layer including an organic material between a first electrode and a second electrode, and further has a layer including a metal oxide between the second electrode and the layer including the organic material, where these electrodes and layers are laminated so that the second electrode is formed later than the first electrode. The light-emitting element is suppressed damage caused to a layer including an organic material during deposition by sputtering and a phenomenon such as short circuit between electrodes.10-27-2011
20100230712LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME - Provided are a light emitting device and a method of fabricating the same. The light emitting device comprises a first conductive type substrate, first to fourth metal electrodes, and a light emitting diode. The first conductive type substrate comprises P-N junction first to fourth diodes. The first metal electrode is connected to the first diode and the fourth diode. The second metal electrode is connected to the third diode and the second diode. The third metal electrode is connected to the first diode and the third diode. The fourth metal electrode is connected to the second diode and the fourth diode. The light emitting diode is electrically connected to the third metal electrode and the fourth metal electrode.09-16-2010
20100230711FLIP-CHIP SEMICONDUCTOR OPTOELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME - A method for fabricating flip-chip semiconductor optoelectronic devices initially flip-chip bonds a semiconductor optoelectronic chip attached to an epitaxial substrate to a packaging substrate. The epitaxial substrate is then separated using lift-off technology.09-16-2010
20100230710LIGHT EMITTING DEVICE PACKAGE - Embodiments include a light emitting device package. The light emitting device package comprises a housing including a cavity; a light emitting device positioned in the cavity; a lead frame including a first section electrically connected to the light emitting device in the cavity, a second section, which penetrates the housing, extending from the first section and a third section, which is exposed to outside air, extending from the second section; and a metal layer positioned on an area defined by a distance which is distant from the housing in the second section of the lead frame.09-16-2010
20100230709Optical semiconductor device, socket, and optical semiconductor unit - An optical semiconductor unit of the present invention has an LED device provided with an LED (Light Emitting Diode) and a socket to which the LED device is mounted, the LED device has a main body to which the LED is mounted, the main body has a first surface to which block-shaped electrode portions are connected.09-16-2010
20100230708Leadframe package for light emitting diode device - An LED leadframe package with surface tension function to enable the production of LED package with convex lens shape by using dispensing method is disclosed. The LED leadframe package of the invention is a PPA supported package house for LED packaging with metal base, four identical metal electrodes, and PPA plastic to fix the metal electrodes and the heat dissipation base together, four ring-alike structures with a sharp edge and with a tilted inner surface, and three ring-alike grooves formed between sharp edge ring-alike structures.09-16-2010
20110291149LIGHT EMITTING DEVICE - According to one embodiment, a light emitting device includes a light emitting chip, an external terminal made of a metal material, and a circuit board. The light emitting chip is mounted on the circuit board via the external terminal. The light emitting chip includes a semiconductor layer, a first electrode, a second electrode, an insulating layer, a first interconnection layer, a second interconnection layer, a first metal pillar, a second metal pillar and a resin layer. The circuit board includes an interconnection bonded to the first metal pillar and the second metal pillar via the external terminal, and a heat radiation material provided on an opposite side of the interconnection and connected to the interconnection.12-01-2011
20120139003OPTOELECTRONIC COMPONENT - An optoelectronic component including a connection carrier including an electrically insulating film at a top side of the connection carrier, an optoelectronic semiconductor chip at the top side of the connection carrier, a cutout in the electrically insulating film which encloses the optoelectronic semiconductor chip, and a potting body surrounding the optoelectronic semiconductor chip, wherein a bottom area of the cutout is formed at least regionally by the electrically insulating film, the potting body extends at least regionally as far as an outer edge of the cutout facing the optoelectronic semiconductor chip, and the cutout is at least regionally free of the potting body.06-07-2012
20120139002LED PACKAGE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - An LED package structure comprises a substrate, two electrodes arranged on the substrate, an LED chip arranged on the substrate and electrically connected to the electrodes, an encapsulation covering the LED chip, and a shell surrounding the substrate and the encapsulation. The shell includes walls, of a height which exceeds the thickness of the substrate and so functions as a reflector. A circuit structure connected to the electrodes is arranged on the bottom of the walls.06-07-2012
20120139001Method For Producing An Organic Optoelectronic Component And Organic Optoelectronic Component - Production of an organic optoelectronic component comprising the following steps: A) providing a first substrate (06-07-2012
20120326198LED STRUCTURE - A light emitting diode (LED) structure comprises a first dopant region, a dielectric layer on top of the first dopant region, a bond pad layer on top of a first portion the dielectric layer, and an LED layer having a first LED region and a second LED region. The bond pad layer is electrically connected to the first dopant region. The first LED region is electrically connected to the bond pad layer.12-27-2012
20120326202Photoelectric Transmitting Or Receiving Device And Manufacturing Method Thereof - A photoelectric transmitting or receiving device comprises a substrate, a first conductive layer, a second conductive layer and a photoelectric transducing chip. The substrate has an upper surface and a recess and is made of a composite material. The first conductive layer and the second conductive layer are formed by using laser to activate the composite material of the substrate. The first conductive layer is disposed on the bottom surface of the recess, and is extended outwardly along the inner lateral wall of the recess and the upper surface of the substrate. The second conductive layer is electrically insulated from the first conductive layer and is extended outwardly along the upper surface of the substrate. The photoelectric transducing chip is disposed on the bottom surface of the recess and electrically connected to the first conductive layer and to the second conductive layer, respectively.12-27-2012
20120326200FLIP-CHIP LIGHT EMITTING DIODE AND METHOD FOR MAKING THE SAME - A flip-chip light emitting diode comprising: a substrate; a circuit layer formed on the substrate, the circuit layer comprising a first electrode and a second electrode separated and electrically insulated from the first electrode; an LED chip arranged on the circuit layer, the LED chip comprising a positive electrode and a negative electrode, the positive electrode and the negative electrode which are located at a bottom face of the LED chip being in electrical connection to the first electrode and the second electrode of the circuit layer by solder, respectively; and a blocking structure located between the positive electrode and the negative electrode, the blocking structure being made of elastic and electrically insulating, colloidal material.12-27-2012
20120326199LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE - Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, a first electrode on the first conductive semiconductor layer, a transparent electrode on the second conductive semiconductor layer, and a second electrode on the transparent electrode. The first electrode includes a first electrode pad on a first region of the first conductive semiconductor layer exposed from the second conductive semiconductor layer and the active layer and a first electrode finger part extending from the first electrode pad toward a second region, in which the first conductive semiconductor layer is exposed. A gap between the transparent electrode and the first electrode finger part is gradually narrowed from the first region toward the second region.12-27-2012
20110309405LIGHT EMITTING DEVICE AND LIGHTING SYSTEM HAVING THE SAME - Provided is a light emitting device. The light emitting device includes a plurality of metal layers including first and second metal layers spaced from each other, a first insulation film disposed on a top surface of the plurality of metal layers, the first insulation film having a -width wider than an interval between the plurality of metal layers, a light emitting chip disposed on the first metal layer of the plurality of metal layers, and a resin layer disposed on the first metal layer, the first insulation film, and the light emitting chip. The first metal layer includes a first base part dispose on the light emitting chip and a first side part bent from the first base part on an outer portion of the first base part.12-22-2011
20110309404LIGHT EMITTING DEVICE AND LIGHTING SYSTEM HAVING THE SAME - Provided is a light emitting device. The light emitting device includes a plurality of metal layers spaced from each other, a first insulation film having an opened area in which a portion of the plurality of metal layers is opened, the first insulation film being disposed around top surfaces of the plurality of metal layers, a light emitting chip disposed on at least one of the plurality of metal layers, the light emitting chip being electrically connected to the other metal layer, a resin layer disposed on the plurality of metal layers and the light emitting chip, and a first guide member formed of a non-metallic material, the first guide member being disposed on the first insulation film.12-22-2011
20120091500LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING LIGHT EMITTING DEVICE - A light emitting device uses a conductive bonding agent in bonding a package and a cap, and the light emitting device is a non-air tight and can be manufactured stably, with an improved yield. A method of manufacturing the light emitting device includes a step of bonding a cap having a frame portion to a package having a light emitting element mounted in a recess of the package to cover an opening of the recess. In the step of bonding, a metal bonding agent having greater wettability to the frame portion than to the package is partially disposed to the package or the frame portion, and extended along the frame portion so that ends of the metal bonding agent are joined to each other. With this, a space is defined at a joining portion where the ends of the metal bonding agent are joined, and the package and the frame portion are bonded.04-19-2012
20120091499SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND PROCESS FOR PRODUCTION THEREOF - The present invention provides a semiconductor light-emitting element comprising an electrode part excellent in ohmic contact and capable of emitting light from the whole surface. An electrode layer placed on the light-extraction side comprises a metal part and plural openings. The metal part is so continuous that any pair of point-positions in the part is continuously connected without breaks, and the metal part in 95% or more of the whole area continues linearly without breaks by the openings in a straight distance of not more than ⅓ of the wavelength of light emitted from an active layer. The average opening diameter is of 10 nm to ⅓ of the wavelength of emitted light. The electrode layer has a thickness of 10 nm to 200 nm, and is in good ohmic contact with a semiconductor layer.04-19-2012
20120091498METHOD FOR FORMING A LIGHT-EMITTING CASE AND RELATED LIGHT-EMITTING MODULE - A method for manufacturing a light-emitting case includes forming a flat panel light emitting diode, and covering the flat panel light emitting diode with transparent plastic material. The transparent plastic material has properties of flexibility, high gas-resistance and water-resistance. When the light-emitting case is forced, the shape of the light-emitting case can be changed.04-19-2012
20120091497Light Emitting Device - Embodiments relate to a light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises: a substrate; a light emitting structure over the substrate, the light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, wherein the first conductive type semiconductor layer is partially exposed; a first region having a first concentration and provided at a region of the second conductive type semiconductor layer; a second region having a second concentration and provided at another region of the second conductive type semiconductor layer; and a second electrode over the second conductive type semiconductor layer.04-19-2012
20120091496SUBMOUNT AND MANUFACTURING METHOD THEREOF - A submount and a manufacturing method thereof are provided. The submount, on which at least a semiconductor die is disposed, is mounted on a circuit board. The submount includes a substrate made of a conductive material or a semiconducting material, a plurality of conductive film patterns, and an insulating film pattern. A surface of the substrate includes a die-bonding area and a plurality of conductive areas. The conductive film patterns are individually distributed in the respective conductive areas. The insulating film pattern is disposed between the conductive film pattern and the insulating film pattern, but is not disposed in the die-bonding area. Furthermore, the semiconductor die is disposed in the die-bonding area and is electrically connected with the conductive film patterns. Because the insulating film pattern is not being disposed in the die-bonding area of the submount, the submount structure has improved heat transfer efficiency.04-19-2012
20120326203LIGHT EMITTING APPARATUS AND LIGHT UNIT HAVING THE SAME - Provides are a light emitting apparatus and a light unit having the same. The light emitting apparatus comprises a light emitting device comprising a light emitting element and a plurality of external leads, and a plurality of electrode pads under the light emitting device.12-27-2012
20120326201Light-Emitting Panel, Light-Emitting Device Using the Light-Emitting Panel, and Method for Manufacturing the Light-Emitting Panel - To provide a light-emitting panel in which the occurrence of crosstalk is suppressed. To provide a method for manufacturing a light-emitting panel in which the occurrence of crosstalk is suppressed. The light-emitting panel includes a first electrode of one light-emitting element, a first electrode of the other light-emitting element, and an insulating partition which separates the two first electrodes. A portion with a thickness A12-27-2012
20120286320LIGHT EMITTING DEVICE - A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.11-15-2012
20120286318ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device includes a substrate, an anode including Ag on the substrate, a transparent inorganic thin-film layer on the anode, the transparent inorganic thin-film layer being in contact with the anode and having non-conductive characteristics; and an emitting layer and a cathode disposed sequentially on the inorganic thin-film layer.11-15-2012
20120286317LIGHT-EMITTING ELEMENT AND THE MANUFACTURING METHOD THEREOF - A light-emitting element includes a light-emitting stack includes: a first semiconductor layer; an active layer formed on the first semiconductor layer; and a second semiconductor layer formed on the active layer; a recess structure formed through the second semiconductor layer, the active layer, and extended in the first semiconductor layer, wherein the first semiconductor layer includes a contact region defined by the recess structure; a first electrode structure including a first contact portion on the contact region of the first semiconductor layer, and a second contact portion laterally extended from the first contact portion into the first semiconductor layer; and a dielectric layer formed on side surfaces of the second semiconductor layer and the active layer to insulate the second semiconductor layer and the active layer from the first contact portion.11-15-2012
20100213496LIGHT EMITTING DIODE PACKAGE - A light emitting diode (LED) package including a carrier, a housing, at least one LED chip and at least one electrostatic discharge protector (ESD protector) is provided. The housing encapsulating a portion of the carrier has at least one first opening, at least one second opening and a barricade. The barricade separates the first opening from the second opening. The first opening and the second opening expose a first surface of the carrier. The LED chip is disposed on the first surface of the carrier, located in the first opening, and electrically connected to the carrier. The ESD protector is disposed on the first surface of the carrier, located in the second opening, and electrically connected to the carrier.08-26-2010
20090026484LIGHT EMITTING DIODE DEVICE - A light emitting diode device is disclosed, and the light emitting diode device includes a base, a substrate, a lead frame, a chip, a first mixed layer and a second mixed layer. The first mixed layer and the second mixed layer respectively contain a glue and a thermal conductance insulating material, such as diamond carbon, diamond-like carbon or ceramic. The substrate and the lead frame are set on the base. The first mixed layer is formed between the chip and the substrate to fix the chip and strengthen heat dissipation. The second mixed layer is covered on the substrate and the chip to reduce the difference of the refraction index such that the total internal reflection angle is wider and the emitting efficiency is enhanced.01-29-2009
20130009194LIGHT-EMITTING MODULE, LIGHT-EMITTING DEVICE, AND METHOD FOR MANUFACTURING THE LIGHT-EMITTING MODULE - A highly reliable light-emitting module or light-emitting device is provided. A method for manufacturing a highly reliable light-emitting module is provided. The light-emitting module includes, between a first substrate and a second substrate, a first electrode provided over the first substrate, a second electrode provided over the first electrode with a layer containing a light-emitting organic compound interposed therebetween, and a sacrifice layer formed using a liquid material provided over the second electrode.01-10-2013
20130009195NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME - A nitride semiconductor light emitting element has; a laminate of a first conduction type semiconductor layer, a light emitting layer and a second conduction type semiconductor layer of a different conduction type from that of the first conduction type semiconductor layer; and electrodes with a laminate structure formed on the first conduction type semiconductor layer, the electrodes include a conductive region of a first layer which has the conductive region and an insulated region.01-10-2013
20130009193METHOD OF FABRICATING LIGHT RECEIVING ELEMENT AND APPARATUS FOR FABRICATING LIGHT RECEIVING ELEMENT - A method of fabricating a light receiving element includes depositing a material for one of a P-type semiconductor, an N--type semiconductor, and electrodes, while applying a reverse bias voltage and irradiating light of a desired wavelength longer than an absorption wavelength of the material. The deposition has a non-adiabatic flow of, at a portion where a local shape to enable generation of near field light is formed on a surface of the deposited material with the irradiation light, absorbing the irradiation light through a non-adiabatic process with the near field light, thereby generating electrons, and canceling generation of a local electric field based on the voltage, and a particle adsorbing flow of, at a portion where the shape is not formed, causing the portion where the local electric field is generated to sequentially adsorb particles forming the material, and shifting to the non-adiabatic flow when the shape is formed.01-10-2013
20130009198LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A light emitting device according to an embodiment includes a second electrode layer comprising at least one projection part; at least one current blocking layer on the projection part of the second electrode layer; a second conductive type semiconductor layer on the second electrode layer and the current blocking layer; an active layer on the second conductive type semiconductor layer; a first conductive type semiconductor layer on the active layer; and a first electrode layer on the first conductive type semiconductor layer, at least a portion of the first electrode layer corresponding with the current blocking layer in a vertical direction.01-10-2013
20130009196LIGHT-EMITTING DIODE ELEMENT AND LIGHT-EMITTING DIODE DEVICE - A light-emitting diode element disclosed in the present application, comprises a first semiconductor layer made of a gallium nitride-based compound and having first and second front surface regions and a rear surface, a second semiconductor layer at the first front surface region and an active layer interposed therebetween. A first electrode is provided on a principal surface of the second semiconductor layer. A second electrode is provided at the second front surface region. A third electrode is provided on the rear surface. A thorough hole having openings in the second front surface region and the rear surface is provided in the first semiconductor layer, and a conductor portion is provided in the through hole.01-10-2013
20130009191SURFACE MOUNTED LED PACKAGE AND MANUFACTURING METHOD THEREFOR - A surface mounted LED package includes an insulated body, a first conductive part, a second conductive part, a LED chip and a bonding wire. The insulated body has a receiving portion and a bond-pad island. The receiving portion is formed with an inner side wall and a flat bottom. The bond-pad island is formed with a bonding plane. The first conductive part has a LED chip and a first solder pin extended to an outer surface of the insulated body. The second conductive part has a second contacting portion and a second solder pin extended to an outer surface of the insulated body. The LED chip is disposed on the second contacting portion. The bonding wire connects the LED chip to the first contacting portion. The present application further provides a manufacturing method for surface mounted LED package.01-10-2013
20130015489Organic Light Emitting DiodeAANM SONG; Ki-WoogAACI Imsil-gunAACO KRAAGP SONG; Ki-Woog Imsil-gun KRAANM Pieh; SungHoonAACI SeoulAACO KRAAGP Pieh; SungHoon Seoul KR - An organic light emitting diode includes: a first electrode; a first hole transporting layer on the first electrode; a first emitting material layer on the first hole transporting layer, the first emitting material layer including a first host with a first dopant, wherein an energy level of a lowest unoccupied molecular orbital of the first dopant is higher than an energy level of a lowest unoccupied molecular orbital of the first host; a first electron transporting layer on the first emitting material layer; and a second electrode on the first electron transporting layer, wherein an energy level of each of the first hole transporting layer and the first electron transporting layer is higher than an energy level of a triplet state exciton of the first emitting material layer.01-17-2013
20130015491ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAMEAANM Kim; Sang-YeolAACI Yongin-cityAACO KRAAGP Kim; Sang-Yeol Yongin-city KRAANM Park; Il-SeokAACI Yongin-cityAACO KRAAGP Park; Il-Seok Yongin-city KRAANM Han; KyulAACI Yongin-cityAACO KRAAGP Han; Kyul Yongin-city KR - An organic light-emitting apparatus includes a substrate; a first electrode formed on the substrate, where the first electrode is a cathode, an electron injection layer formed to contact an upper surface of the first electrode and including Mg, an intermediate layer formed on the electron injection layer and including an organic emission layer, and a second electrode which is formed on the intermediate layer and is an anode.01-17-2013
20130015490LED AND METHOD FOR MANUFACTURING THE SAMEAANM LIN; HSIN-CHIANGAACI HsinchuAACO TWAAGP LIN; HSIN-CHIANG Hsinchu TWAANM CHEN; PIN-CHUANAACI HsinchuAACO TWAAGP CHEN; PIN-CHUAN Hsinchu TW - An LED includes a base, a pair of leads fixed on the base, a housing fixed on the leads, a chip mounted on one lead and an encapsulant sealing the chip. The housing defines a cavity in a central area thereof and a chamber adjacent to a circumferential periphery thereof. Top faces of the leads are exposed in the chamber. A blocking wall is formed in the chamber to contact the exposed top faces of the leads. A bonding force between the blocking wall and the leads is larger than that between the leads and the housing. A method for manufacturing the LED is also disclosed.01-17-2013
20110147786LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - Disclosed is a light emitting device and a method of manufacturing the same. The light emitting device includes a first conductive semiconductor layer, an active layer over the first conductive semiconductor layer, a second conductive semiconductor layer over the active layer, a current spreading layer over the second conductive semiconductor layer, a first electrode layer over the first conductive semiconductor, and a second electrode layer over the current spreading layer.06-23-2011
20130020608GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - A Group III nitride semiconductor light-emitting device exhibiting reduced contact resistance between a p contact layer and an ITO electrode. The Group III nitride semiconductor light-emitting device has an AlGaN dot-like structure on the p contact layer, and an ITO electrode on the p contact layer and the dot-like structure. The dot-like structure has a structure in which a plurality of AlGaN dots are discretely distributed on the top surface of the p contact layer. The dot-like structure is bonded to oxygen, and oxygen increases on an interface between the p contact layer and the ITO electrode.01-24-2013
20130020607LED MODULE AND METHOD FOR MANUFACTURING THE SAME - An LED (light emitting diode) module includes a circuit board and a plurality of LEDs mounted on the circuit board. The circuit board includes a support layer, an insulative layer and a conductive layer sequentially stacked on each other. The circuit board is embossed to form a plurality of pleats on top and bottom surfaces thereof, to thereby increase heat dissipation area of the circuit board.01-24-2013
20130020609SEMICONDUCTOR LIGHT-EMITTING DEVICE HAVING STACKED TRANSPARENT ELECTRODES - This application is related to a semiconductor light-emitting device including a substrate, a semiconductor epitaxial layer over the substrate and having a first surface distant from the substrate, a first transparent conductive layer formed on the first surface, and a second transparent conductive layer formed on the first transparent conductive layer and having a second surface smaller than a first surface of the first transparent conductive layer.01-24-2013
20130020606CIRCUIT BOARD WITH THERMO-CONDUCTIVE PILLAR - An LED device with improved circuit board LED support structure is presented. A top surface of a thermally-conductive substrate of this LED device comprises a thermally-conductive pillar. The pillar is not covered with a dielectric layer and an LED package is arranged directly on the pillar with the LED packages bottom thermally-conductive plate in direct contact with the pillar top surface.01-24-2013
20120241810PRINTING CIRCUIT BOARD WITH MICRO-RADIATORS - The present invention relates to a printing circuit board with micro-radiators. The printing circuit board includes a substrate, the substrate includes multi-layer copper clad plates and multi-layer prepregs, the multi-layer copper clad plates and the multi-layer prepregs are cross-laminated, the printing circuit board also includes at least one cylindrical micro-radiator embedded into a cylindrical hole of the substrate, the height of the insulating microradiator is equal to the thickness of the substrate, an upper surface and a lower surface of the micro-radiator are covered by copper foils, a heating element is installed on one of the surfaces of the insulating micro-radiator, the other surface of the insulating micro-radiator is isolated from other circuits of the printing circuit board. The present invention combines the micro-radiator with high thermal conductivity and traditional rigid printing circuit board. The present invention has the advantages of high thermal conductivity and stable heat transfer.09-27-2012
20120241809MANUFACTURING PROCESS FOR SOLID STATE LIGHTING DEVICE ON A CONDUCTIVE SUBSTRATE - A method for fabricating a light emitting device includes forming a trench in a first surface on first side of a substrate. The trench comprises a first sloped surface not parallel to the first surface, wherein the substrate has a second surface opposite to the first surface of the substrate. The method also includes forming alight emission layer over the first trench surface, but not over the remainder of the first substrate surface, and removing at least a portion of the substrate from the second side of the substrate to expose the light emission layer and allow it to emit light out of the protrusion or protrusions on the second side of the substrate. These protrusions may be elongated pyramids.09-27-2012
20120241808SEMICONDUCTOR LIGHT-EMITTING ELEMENT - A semiconductor light-emitting element with a counter electrode structure can include a first electrode including at least one linear first electrode piece that is disposed on a surface of a first semiconductor layer close to the support substrate and in ohmic contact with the first semiconductor layer, a second electrode including at least one linear second electrode piece that is disposed on a surface of a second semiconductor layer and in ohmic contact with the second semiconductor layer. A plurality of conical projections can be formed on the second semiconductor layer. The first electrode piece and the second electrode piece can be disposed so as not to overlap with each other in a stacked direction of the semiconductor light-emitting stacked body but to be parallel with each other when viewed from above.09-27-2012
20120241807Mounting Structure for Solid State Light Sources - A mounting structure for solid-state light sources, for example of the LED type, comprises a support board; a submount mounted on said support board and having at least one solid-state light radiation source mounted thereon; a drive board carrying drive circuitry for the light radiation source, the aforementioned drive board being mounted on the support board and extending peripherally with respect to the aforementioned submount; electrical interface connections between the submount and the drive board for connecting the light radiation source to the drive circuitry; and mechanical and thermal interface connections between the submount and the support board.09-27-2012
20120241806LIGHT EMITTING DEVICE PACKAGE - Disclosed is a light emitting device package. The light emitting device package includes a Zener diode, a light emitting device including a light emitting diode, a body including lead frames on which the light emitting device and the Zener diode are disposed, and provided with a cavity formed on the lead frames, a first adhesive member disposed between the Zener diode and the lead frames, and a second adhesive member disposed between the light emitting device and the lead frames, and the thickness of the second adhesive member is equal to or less than the thickness of the first adhesive member.09-27-2012
20120241805SEMICONDUCTOR LIGHT EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF - A manufacturing method of a semiconductor light emitting element, includes forming sacrifice portions within the width of street portions in a semiconductor laminated body, and performing wet etching to remove the sacrifice portions together with their neighboring portions, thereby removing etching residuals in the streets.09-27-2012
20120241804LIGHT-EMITTING DEVICE PACKAGE AND METHOD OF MANUFACTURING THE SAME - A light-emitting device package and method of manufacturing the same. The method includes: preparing a package main body comprising a plurality of cavities, wherein a light-emitting device chip is mounted in each of the cavities and a through hole is formed in a bottom of each of the cavities; preparing a fixed mold providing a first surface that blocks the cavity; coupling the package main body to the fixed mold such that an end portion of the cavity contacts the first surface; supplying an encapsulation material into the cavity through the through hole; hardening the encapsulation material; and separating the package main body from the fixed mold, and dicing the package main body into a plurality of light-emitting device packages using a singulation operation. The encapsulation material is supplied while disposing the package main body on the fixed mold so that the encapsulation material is supplied in a gravitational direction.09-27-2012
20120241803SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to an embodiment, a semiconductor light emitting device includes a stacked body, a transparent electrode layer, a first electrode and a second electrode. The stacked body includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The transparent electrode layer is provided on a surface of the second semiconductor layer and transmitting light emitted from the light emitting layer. The first electrode is electrically connected to the transparent electrode layer; and the second electrode is electrically connected to the first semiconductor layer. A region is provided along an edge of the transparent electrode layer with a part of the transparent electrode layer having a thickness smaller on the edge side than a thickness on a central side.09-27-2012
20120241802Method for Producing a Component with at Least One Organic Material and Component with at Least One Organic Material - In at least one embodiment of the component (09-27-2012
20120241801FLIP-CHIP LED PACKAGING AND MANUFACTURING THEREOF - A flip-chip LED package includes a transparent substrate, an LED chip and a holder. The transparent substrate is formed by heating a green piece made of a mixture of glass powders and solvent. The LED chip includes a first side and an opposite second side, and two electrodes formed on the first side. The second side of the LED chip is directly attached to the transparent substrate. The holder combines to the LED chip. The holder includes two solders connected to the electrodes of the LED chip respectively. The present disclosure also relates to a method for manufacturing such flip-chip LED package.09-27-2012
20080246050ORGANIC LIGHT-EMITTING DEVICE INCLUDING TRANSPARENT CONDUCTING OXIDE LAYER AS CATHODE AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting device including a transparent conducting oxide layer as a cathode and a method of manufacturing the organic light-emitting device. The organic light-emitting device includes an anode disposed on a substrate. An organic functional layer including at least an organic light-emitting layer is disposed on the anode. The transparent conducting oxide layer used as the cathode is disposed on the organic functional layer. The transparent conducting oxide layer cathode is formed by plasma-assisted thermal evaporation. A microcavity structure is not formed in the organic light-emitting device, thereby avoiding a luminance change and a color shift as a function of viewing angle.10-09-2008
20080237626LED chip packaging structure - An improved LED chip packaging structure includes a substrate, an insulating layer, a light emitting chip and sealing adhesive. At least two conductive traces are disposed on at least one side surface of the substrate. The insulating layer attaches on one side surface of the substrate and includes an insulating film. The light emitting chip is received in the through hole of the insulating layer and attaches on one side surface of the substrate. An adhesive is securing the light emitting chip on the substrate, and the light emitting chip connects with at least one conducting wire. The sealing adhesive is filled into the through hole of the insulating layer. By the direct combination of the light emitting chip and the substrate, the present invention has the advantageous of low cost, the heat dispersal effect is improved, the packaging efficiency is increased, and the market competition is enhanced.10-02-2008
20130140599TEXTILE-TYPE ORGANIC LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A textile-type organic light-emitting device and a method of manufacturing the textile-type organic light-emitting device are provided. The light-emitting device includes a textile-type first electrode; an organic light-emitting material layer formed on a surface of the textile-type first electrode; and a second electrode formed on the organic light-emitting material layer, the second electrode being transparent.06-06-2013
20080224169Submount for diode with single bottom electrode - A submount is used to mount a diode between two metal areas on the upper surface of a substrate. One of the areas is connected to a metal plate at the lower surface of the substrate through a via. The submount is clamped between two metal sheets. The top metal sheet has a through-hole for anchoring and self-aligning the diode. The electrodes of the diode are each coupled to one of the clamping metal sheets. Clamping metals provide pressure contact without soldering to the contact. But soldering can be alternatively used to enhance product reliability. Either the top metal sheet or the bottom metal sheet can be fully or selectively coating of solder for batch soldering at the contact point upon heating. The large metal plates and the large metal clamping sheets provide good heat sink and speedy soldering.09-18-2008
20080224168Intride-based semiconductor light emitting diode and method of manufacturing the same - A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 μm; and an n-electrode pad formed on the n-type nitride semiconductor layer.09-18-2008
20080224167Semiconductor device and optical apparatus - A semiconductor device includes a substrate, a semiconductor layer formed on the substrate, and an optically functional portion formed by using at least a portion of the semiconductor layer. The optically functional portion performs light emission or light reception. The semiconductor device further includes a first driving electrode that is electrically connected to a semiconductor layer on a surface of the optically functional portion, and the first driving electrode drives the optically functional portion. The semiconductor device further includes an encapsulating electrode that is formed on the semiconductor layer to surround periphery of the optically functional portion, and electrically connected to the first driving electrode.09-18-2008
20080224166LED INTERCONNECT SPRING CLIP ASSEMBLY - An LED interconnect spring clip assembly includes a housing having a center cavity and a plurality of contact features. Each contact feature has a portion retained by the housing and another portion that is operable to contact a terminal of an LED package disposed within the center cavity of the housing. The LED interconnect spring clip assembly retains the LED package when mounted to a substrate.09-18-2008
20130175569LED Lighting Device - The invention involves a lighting device (07-11-2013
20130175572LIGHT-EMITTING DIODE CHIP - A light-emitting diode (LED) chip comprising a first semiconductor layer; an active layer disposed on said first semiconductor layer; a second semiconductor layer disposed on said active layer; metal layers which disposed on said second semiconductor layer and overlapped with each other indirectly, comprising a first metal layer which connected to a first electrode deposited on said first semiconductor, and a second metal layer which connected to a transparent conductive layer and a second electrode deposited on said second semiconductor layer; wherein said second metal layer deposited on said first metal layer which further connected to said first semiconductor layer through an indentation.07-11-2013
20130181249LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME, AND LIGHT EMITTING UNIT - A light emitting device includes: a laminated body including a first-conductivity type semiconductor layer, a light emitting layer, and a second-conductivity type semiconductor layer in this order; a contact layer provided in contact with the second-conductivity type semiconductor layer at least at a peripheral edge of the second-conductivity type semiconductor layer; a first electrode electrically connected to the first-conductivity type semiconductor layer; a second electrode provided nearer to the first-conductivity type semiconductor layer than the second-conductivity type semiconductor layer; and a conductor electrically connecting the second electrode and the contact layer to each other.07-18-2013
20130181250LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - By using a light emitting device including an insulating substrate and a light emitting unit formed on the insulating substrate, the light emitting unit including: a plurality of linear wiring patterns disposed on the insulating substrate in parallel with one another, a plurality of light emitting elements that are mounted between the wiring patterns while being electrically connected to the wiring patterns, and a sealing member for sealing the light emitting elements, as well as a method for manufacturing thereof, it becomes possible to provide a light emitting device that achieves sufficient electrical insulation and has simple manufacturing processes so that it can be manufactured at a low cost, and a method for manufacturing the same.07-18-2013
20130181251LED MODULE - An LED module includes: a package having electrodes provided on the outer surface of opposing sidewalls, and a light-emitting element connected to the electrodes and mounted on the package; a base member having a copper metal; an insulating layer stacked on the surface of the base member and having an insulating material; and a conductive wiring pattern connected to the electrodes by soldering and formed on the surface of the insulating layer. The insulating layer has a through-hole formed by removing a part of the section where the package is positioned, and a heat dissipation unit formed by soldering between the back surface of the package and the base member, which face one another with the through-hole interposed therebetween.07-18-2013
20120248495LIGHT-REFLECTIVE ANISOTROPIC CONDUCTIVE PASTE AND LIGHT-EMITTING DEVICE - A light-reflective anisotropic conductive paste is used as an anisotropic conductive paste when a light-emitting device is produced by flip-chip mounting a light-emitting element such as a light-emitting diode element (LED) on a wiring board. The light-reflective anisotropic conductive paste includes light-reflective insulating particles, in order to improve light emission efficiency without providing, in the LED, a light-reflecting layer that causes an increase in manufacturing cost. With the light-reflective anisotropic conductive paste, a reduction in bonding strength of the light-emitting element to the wiring board in a high-temperature environment can be suppressed, and a reduction in conduction reliability after a TCT can also be suppressed. In the light-reflective anisotropic conductive paste, conductive particles and the light-reflective insulating particles are dispersed in a thermosetting resin composition. The thermosetting resin composition contains an epoxy compound and a thermal catalyst-type curing agent.10-04-2012
20120248494Optoelectronic Semiconductor Chip and Method for Fabricating an Optoelectronic Semiconductor Chip - An optoelectronic semiconductor chip, comprising: a radiation out-coupling side (10-04-2012
20120248491SEMICONDUCTOR LIGHT-EMITTING ELEMENT, METHOD FOR MANUFACTURING THE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND LAMP THAT USES THE SEMICONDUCTOR LIGHT-EMITTING ELEMENT - Provided are a semiconductor light-emitting element that is capable of efficiently outputting blue color or ultraviolet light, and a lamp using the semiconductor light-emitting element.10-04-2012
20130134471LED SUBSTRATE STRUCTURE, LED UNIT AND LIGHTING MODULE HAVING THE SAME - An LED substrate structure has a substrate and a conducting portion. The substrate has a bottom surface and two opposite first lateral surfaces connected with the bottom surface. The bottom surface has the conducting portion formed thereon, and the conducting portion has a first cutting segment located on a contact border defined between one of the two first lateral surfaces and the bottom surface. The conducting portion further has an expansion region connected with the first cutting segment. The length of the first cutting segment is shorter than any segment taken on the expansion region parallel thereto.05-30-2013
20130134470LIGHT EMITTING DIODE PACKAGE MODULE - Disclosed herein is a light emitting diode package module, including: a substrate; a light emitting diode package formed on the substrate; an instrument member formed below the substrate; and a magnetic body formed on the substrate, the light emitting diode package, or the instrument member.05-30-2013
20130134473Radiation-Emitting Semiconductor Body, Method for Producing a Radiation-Emitting Semiconductor Body and Radiation-Emitting Semiconductor Component - A radiation-emitting semiconductor body is provided which, besides an epitaxial semiconductor layer sequence having an active zone that is suitable for generating electromagnetic radiation, has a carrier layer that is intended to mechanically stabilize the epitaxial semiconductor layer sequence. The semiconductor body furthermore has contact structures for electrical contacting of the semiconductor body, which respectively have a volume region and a surface bonding region. The surface bonding region is formed from a material which is different from the material of the volume region.05-30-2013
20130175570LED Lamp - An LED lamp includes a housing, and a base plate combined with the housing. The base plate is integrally combined with the housing by injection molding so that the base plate and the housing are combined closely and solidly and will not detach from each other.07-11-2013
20130175571SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD FOR PRODUCING SEMICONDUCTOR LIGHT EMITTING ELEMENT AND LIGHT EMITTING DEVICE - In a semiconductor light emitting element 07-11-2013
20130092971LIGHT EMITTING DIODE PACKAGING STRUCTURE AND MANUFACTURING METHOD THEREOF - A light emitting diode (LED) packaging structure includes a substrate, a first transparent plastic layer, a second transparent plastic layer, an LED chip, fluorescent glue covering the LED chip and packaging plastic covering the substrate, the first transparent plastic layer and the fluorescent glue. The first and second transparent plastic layers are provided on the substrate. The LED chip is provided in the first enclosed flat pattern and the second enclosed flat pattern encloses the second transparent plastic layer. The first transparent plastic layer is higher than the LED chip and the second transparent plastic layer is higher than the first transparent plastic layer. The LED packaging structure does not require a leadframe and provides a broad emission angle of light.04-18-2013
20130092970SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor light-emitting device of the invention includes: a semiconductor layer including a light-emitting layer and having a first major surface and a second major surface opposite to the first major surface; a phosphor layer facing to the first major surface; an interconnect layer provided on the second major surface side and including a conductor and an insulator; and a light-blocking member provided on a side surface of the semiconductor layer and being opaque to light emitted from the light-emitting layer.04-18-2013
20130187189HEAT SINK BIMETALLIC PILLAR BUMP AND THE LED HAVING THE SAME - The invention relates to a heat sink bimetallic pillar bump that is mainly disposed inside of a LED. The heat sink bimetallic pillar bump comprises a heat absorbing section composed of a first metal and a heat dissipating section firmly connected with the heat absorbing section. The heat dissipating section is composed of a second metal. The first metal has a thermal conductivity greater than that of the second metal. The LED chip is disposed on the heat absorbing section. The heat absorbing section with high thermal conductivity quickly transfers the heat generated by the LED chip to the heat dissipating section. This makes the heat from the LED chip to be dissipated quickly, which therefore achieves purposes of improving the heat dissipation efficiency of the LED and other kinds of IC chips and prolonging the lifespan of the LED and other kinds of IC chips.07-25-2013
20130187190WIRING SUBSTRATE, LIGHT EMITTING DEVICE, AND MANUFACTURING METHOD OF WIRING SUBSTRATE - There is provided a wiring substrate. The wiring substrate includes: a heat sink; a first insulating layer on the heat sink; a wiring pattern on the first insulating layer, wherein the wiring pattern is configured to mount a light emitting element thereon; and a second insulating layer on the first insulating layer such that the wiring pattern is exposed from the second insulating layer.07-25-2013
20130187191SEMICONDUCTOR LIGHT EMITTING DEVICE AND MULTIPLE LEAD FRAME FOR SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device that is excellent in radiating heat and that can be molded into a sealing shape having intended optical characteristics by die molding is provided. The semiconductor light emitting device includes: a lead frame including a plate-like semiconductor light emitting element mounting portion having an LED chip mounted on a main surface, and a plate-like metal wire connecting portion extending over a same plane as the semiconductor light emitting element mounting portion; a metal wire electrically connecting the LED chip and the metal wire connecting portion; a thermosetting resin molded by die molding or dam-sheet molding so as to completely cover the LED chip and the metal wire; and a resin portion provided to surround the lead frame and having the thickness not greater than the thickness of the lead frame.07-25-2013
20130187192Optoelectronic Component and Method for the Production Thereof - An optoelectronic component has a semiconductor chip and a carrier, which is bonded to the semiconductor chip by means of a bonding layer of a metal or a metal alloy. The semiconductor chip includes electrical connection regions facing the carrier and the carrier includes electrical back contacts on its back remote from the semiconductor chip. The back contacts are connected electrically conductively to the first electrical or second connection region respectively, in each case by at least one via extending through the carrier. The first and/or second electrical back contact is connected to the first or second electrical connection region respectively by at least one further via extending through the carrier.07-25-2013
20130187193SHUNTING LAYER ARRANGEMENT FOR LEDS - A shunting pattern on a surface of an LED die comprises an array of metal dots having widths that are on the order of 2Lt-5Lt (where Lt is transfer length) so as not to block a significant amount of light, yet have low contact resistance to the semiconductor current spreading layer. Contact resistance is not significantly reduced with widths greater than 2Lt. Each dot represents a current injection area. For a minimum 2Lt width and 50 square dots per mm2, the top surface area of an LED die will have about 1% of its surface covered by the dots. To cause the current to be evenly distributed over the top surface of the LED, the dots are connected with a grid of very thin metal connectors, having widths much less than 2Lt. In one embodiment, a wire bond electrode is formed near the middle of the top surface of the LED to create a more uniform current distribution.07-25-2013
20130187187Light-Emitting Device, Display Device, and Semiconductor Device - A light-emitting device which includes a semiconductor layer; a first insulating layer over the semiconductor layer; a gate electrode and a first conductive layer over the first insulating layer; a second insulating layer over the gate electrode and the first conductive layer; source and drain electrodes and a second conductive layer over the second insulating layer; a third insulating layer over the source and drain electrodes and the second conductive layer; a first electrode and a third conductive layer over the third insulating layer; a planarization film covering an end portion of the first electrode; an electroluminescent layer over the first electrode; and a second electrode over the electroluminescent layer and the planarization film is provided. The second electrode is electrically connected to the third conductive layer through an opening portion provided in the planarization film. The opening portion overlaps with the first, second, and third conductive layers.07-25-2013
20130113016PACKAGING PHOTON BUILDING BLOCKS WITH TOP SIDE CONNECTIONS AND INTERCONNECT STRUCTURE - Standardized photon building blocks are used to make both discrete light emitters as well as array products. Each photon building block has one or more LED chips mounted on a substrate. No electrical conductors pass between the top and bottom surfaces of the substrate. The photon building blocks are supported by an interconnect structure that is attached to a heat sink. Landing pads on the top surface of the substrate of each photon building block are attached to contact pads disposed on the underside of a lip of the interconnect structure. In a solder reflow process, the photon building blocks self-align within the interconnect structure. Conductors on the interconnect structure are electrically coupled to the LED dice in the photon building blocks through the contact pads and landing pads. The bottom surface of the interconnect structure is coplanar with the bottom surfaces of the substrates of the photon building blocks.05-09-2013
20130113015Substrate, Light Emitting Device and Method for Manufacturing Substrate - A substrate includes a first lead frame, a second lead frame, and a resin layer. The first lead frame includes a heat sink and a plurality of electrodes for external connection. The second lead frame is laminated on the first lead frame and includes a plurality of wirings for mounting light emitting elements. The resin layer is filled between the first lead frame and the second lead frame. The plurality of wirings are arranged above the heat sink. The plurality of electrodes and part of the plurality of wirings are joined with each other.05-09-2013
20130113014OPTOELECTRONIC DEVICE - The application provides an optoelectronic device structure, comprising a semiconductor stack, comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; a first electrode electrically connecting with the first conductivity type semiconductor layer, and further comprising a first extension electrode; a second electrode electrically connecting with the second conductivity type semiconductor layer; and a plurality of electrical restraint contact areas between the semiconductor stack and the first extension electrode, wherein the plurality of electrical restraint contact areas is distributed in a variable interval.05-09-2013
20130099276LED LIGHT SOURCE DEVICE AND MANUFACTURING METHOD FOR THE SAME - An object of the invention is to provide an LED light source device and a manufacturing method for the same that can maintain high reflectance over an extended period of time notwithstanding the interaction between light and heat. More specifically, the invention provides an LED light source device that includes a substrate, an electrode formed on the substrate, a white inorganic resist layer deposited over the substrate so as to cover a surface thereof everywhere except where the electrode is formed, and an LED element connected to the electrode, wherein the white inorganic resist layer contains fine white inorganic particles dispersed or mixed into an inorganic binder, and a method for manufacturing such an LED light source device.04-25-2013
20130099273WIRING SUBSTRATE, LIGHT EMITTING DEVICE, AND METHOD FOR MANUFACTURING WIRING SUBSTRATE - A wiring substrate includes a substrate, a first insulating layer formed on the substrate, wiring patterns formed on a first surface of the first insulating layer, and a second insulating layer formed on the first surface of the first insulating layer. The second insulating layer covers the wiring patterns and includes a first opening that partially exposes adjacent wiring patterns as a pad. A projection is formed in an outer portion of the substrate located outward from where the first opening is arranged. The projection rises in a thickness direction of the substrate.04-25-2013
20110266587SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF - In some embodiments, a semiconductor device includes a semiconductor chip configured to receive or emit light, a chip mounting region for mounting the semiconductor chip, an electrode arranged surrounding the chip mounting region, an electric connecting element which electrically connects the semiconductor chip and the electrode, an optically-transparent element arranged on a top surface of the semiconductor chip and made of optically-transparent material, a protection film arranged on a top surface of the optically-transparent element so as to surround a light passing region through which the light passes, and a filler-contained insulating resin which seals the semiconductor chip, the electric connecting element, the electrode, the optically-transparent element, and the protection film in a state in which a top surface of the protection film and the light passing region surrounded by the protection film are exposed outside.11-03-2011
20130119427LED SUBSTRATE, LED CHIP AND METHOD FOR MANUFACTURING THE SAME - An LED substrate may comprise a base including a first surface and a second surface; and a conductive structure formed on at least a part of the first surface and at least a part of the second surface, the part of the conductive structure formed on the first surface electrically connected to the part of the conductive structure formed on the second surface. A method for forming an LED substrate, a method for forming an LED chip, and an LED chip manufactured therefrom may be provided as well.05-16-2013
20130126937SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer formed between the n-type semiconductor layer and the p-type semiconductor layer, and emitting light. The device further includes a p-electrode contacting to the p-type semiconductor layer, and including a first conductive oxide layer having an oxygen content lower than 40 atomic % and a second conductive oxide layer contacting to the first conductive oxide layer and having a higher oxygen content than the oxygen content of the first conductive oxide layer. The device also includes an n-electrode connecting electrically to the n-type semiconductor layer.05-23-2013
20130126935Surface-Mountable Optoelectronic Component and Method for Producing a Surface-Mountable Optoelectronic Component - A surface-mountable optoelectronic component has a radiation passage face, an optoelectronic semiconductor chip and a chip carrier. A cavity is formed in the chip carrier and the semiconductor chip is arranged in the cavity. A molding surrounds the chip carrier at least in places. The chip carrier extends completely through the molding in a vertical direction perpendicular to the radiation passage face.05-23-2013
20130126933ELECTRONIC DEVICE CONTACT STRUCTURES - Electronic device contact structures are disclosed.05-23-2013
20110272731SUBSTRATE FOR LIGHT EMITTING ELEMENT PACKAGE, AND LIGHT EMITTING ELEMENT PACKAGE - This invention provides a substrate for a light emitting element package that can obtain a sufficient heat dissipation effect from a light emitting element and can also lower the costs and reduce the size as a substrate for packaging the light emitting element, as well as a light emitting element package using the same. The substrate for a light emitting element package includes an insulating layer 11-10-2011
20110272732Element Substrate and Light Emitting Device - A light emitting device and an element substrate which are capable of suppressing variations in the luminance intensity of a light emitting element among pixels due to characteristic variations of a driving transistor without suppressing off-current of a switching transistor low and increasing storage capacity of a capacitor. According to the invention, a depletion mode transistor is used as a driving transistor. The gate of the driving transistor is fixed in its potential or connected to the source or drain thereof to operate in a saturation region with a constant current flow. A current controlling transistor which operates in a linear region is connected in series to the driving transistor, and a video signal for transmitting a light emission or non-emission of a pixel is inputted to the gate of the current controlling transistor through a switching transistor.11-10-2011
20110272730LIGHT EMITTING DEVICE - A light emitting device having an electrode structure in which resistance to electrostatic discharge (ESD) is increased, the static electricity is efficiently dispersed and a current concentration phenomenon is prevented, the light emitting device including: a substrate; a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer opposite to the first conductivity type semiconductor layer that are sequentially formed on the substrate; a first conductivity type electrode pad formed on the first conductivity type semiconductor layer; a second conductivity type electrode pad formed on the second conductivity type semiconductor layer; a first auxiliary electrode formed on the second conductivity type semiconductor layer to extend in one direction and having one end connected to the second conductivity type electrode pad and the other end formed in an opposite direction to a direction toward the first conductivity type electrode pad; and a second auxiliary electrode formed on the second conductivity type semiconductor layer to extend in one direction and including a main arm having one end connected to the second conductivity type electrode pad and the other end formed in a direction toward the first conductivity type electrode pad and a plurality of second auxiliary sub-electrodes extending from the other end of the main arm, wherein a direction in which an end of each of the second auxiliary sub-electrodes extends, is not toward the first conductivity electrode pad.11-10-2011
20110272729WAFER LEVEL LED INTERPOSER - A wafer level LED interposer and its manufacturing method is provided. The wafer level LED interposer includes: a LED chip of which N-type electrode and p-type electrode are formed on the upper side; an interposer substrate formed with through vias at each position corresponding to the N-type electrode and the p-type electrode and bonded to the upper side of the LED chip, wherein the N-type electrode and p-type electrode are connected to each through via; a redistribution layer formed on the upper surface of the interposer substrate and electrically connected to the through vias; a solder resist layer coated on the upper surface of the interposer substrate for a part of the redistribution layer selectively to be opened; and an external connector formed at the position where the redistribution layer is opened.11-10-2011
20110272728Radiation-Emitting Semiconductor Chip - A radiation-emitting semiconductor chip (11-10-2011
20130134472LIGHT EMITTING DIODE PACKAGE AND A METHOD FOR MANUFACTURING LIGHT EMITTING DIODE PACKAGE - A light emitting diode (LED) package comprises a LED, and a lead frame electrically connected to the LED. The lead frame includes a notch which has a predetermined size and a predetermined shape configured to separate a solder paste into two regions on either side of the notch when the solder paste is disposed on the lead frame.05-30-2013
20100276725NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - The invention relates to a high-output nitride light emitting device. The light emitting device includes a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer deposited in their order on a substrate. The light emitting device also includes first and second insulation layers formed in different upper surface portions of the nitride semiconductor light emitting device, and first and second bonding pads formed respectively on the first and second insulation layers. The light emitting device further includes first and second extension electrodes extended from the first and second bonding pads and coupled respectively to the first and second conductivity semiconductor layers. The electrode arrangement according to the present invention prevents direct coupling between the bonding pads and the light emitting device, thus allowing a symmetrical structure that can achieve more uniform current spreading using only the extension electrodes.11-04-2010
20100276723DEVICE AND DEVICE MANUFACTURE METHOD - A device is provided with: a first substrate mainly containing silicon dioxide; a second substrate mainly containing silicon, compound semiconductor, silicon dioxide or fluoride; and a bonding functional intermediate layer arranged between the first substrate and the second substrate. The first substrate is bonded to the second substrate thorough room temperature bonding in which a sputtered first surface of the first substrate is contacted with a sputtered second surface of the second substrate via the bonding functional intermediate layer. Here, the material of the bonding functional intermediate layer is selected from among optically transparent materials which are oxide, fluoride, or nitride, the materials being different from the main component of the first substrate and different from the main component of the second substrate.11-04-2010
20100276722Optoelectronic Semiconductor Chip, Optoelectronic Component and a Method for Producing an Optoelectronic Component - A semiconductor chip is specified that has a contact layer that is not optimum for many common applications. For example, the contact layer is too thin to tolerate an operating current intended for the semiconductor chip without considerable degradation. Also specified is an optoelectronic component in which the semiconductor chip can be integrated so that the suboptimal quality of the contact layer is compensated for. In the component the semiconductor chip is applied to a carrier body so that the contact layer is arranged on a side of the semiconductor body that is remote from the carrier body. The semiconductor chip and the carrier body are at least partly covered with an electrically isolating layer, and an electrical conductor applied to the isolating layer extends laterally away from the semiconductor body and contacts at least a partial surface of the contact layer. In addition, an advantageous process for producing the component is specified.11-04-2010
20110215369LUMINESCENCE DIODE CHIP - A luminescence diode chip includes a semiconductor layer sequence having an active layer suitable for generating electromagnetic radiation, and a first electrical connection layer, which touches and makes electrically conductive contact with the semiconductor layer sequence. The first electrical connection layer touches and makes contact with the semiconductor layer sequence in particular with a plurality of contact areas. In the case of the luminescence diode chip, an inhomogeneous current density distribution or current distribution is set in a targeted manner in the semiconductor layer sequence by means of an inhomogeneous distribution of an area density of the contact areas along a main plane of extent of the semiconductor layer sequence.09-08-2011
20110215360LED Flip-Chip Package Structure with Dummy Bumps - A light-emitting device (LED) package component includes an LED chip having a first active bond pad and a second active bond pad. A carrier chip is bonded onto the LED chip through flip-chip bonding. The carrier chip includes a first active through-substrate via (TSV) and a second active TSV connected to the first and the second active bond pads, respectively. The carrier chip further includes a dummy TSV therein, which is electrically coupled to the first active bond pad, and is configured not to conduct any current when a current flows through the LED chip.09-08-2011
20130146931PIXEL STRUCTURE AND MANUFACTURING METHOD OF THE SAME - A pixel structure and manufacturing method of the same are described. The pixel structure includes a substrate, a switch transistor, a dielectric layer, a conducting connection line, a driving transistor, a capacitor and a pixel electrode. The substrate defines a transistor region and the switch transistor is disposed on the transistor region. The dielectric layer is disposed on the substrate and covers the switch transistor. The conducting connection line disposed on the dielectric layer is located over the transistor region. The driving transistor disposed on the dielectric layer is vertically stacked over the switch transistor and transistor region. The conducting connection line electrically connects the switch transistor to the driving transistor. The pixel electrode is electrically connected to the driving transistor.06-13-2013
20130146932LIGHT-EMITTING DIODE ARCHITECTURES FOR ENHANCED PERFORMANCE - The present invention relates to light-emitting diodes (LEDs), and related components, processes, systems, and methods. In certain embodiments, an LED that provides improved optical and thermal efficiency when used in optical systems with a non-rectangular input aperture (e.g., a circular aperture) is described. In some embodiments, the emission surface of the LED and/or an emitter output aperture can be shaped (e.g., in a non-rectangular shape) such that enhanced optical and thermal efficiencies are achieved. In addition, in some embodiments, chip designs and processes that may be employed in order to produce such devices are described.06-13-2013
20130146933SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF FORMING THE SAME - A semiconductor light-emitting device has a first principal surface, a second principal surface formed on a side opposite to the first principal surface, and a light-emitting layer. A p-electrode on the second principal surface is in the region of the light-emitting layer and surrounds an n-electrode. An insulating layer on the side of the semiconductor layer surrounds the p- and the n-electrodes. A p-metal pillar creates an electrical connection for the p-electrode, and an n-metal pillar creates an electrical connection for the n-electrode. A resin layer surrounds the end. portions of the p- and the n-metal pillars, and also covers the side surface of the semiconductor layer, the second principal surface, the p-electrode, the n-electrode, the insulating layer, the p-metal pillar and the n-metal pillar.06-13-2013
20130146934LIGHT-EMITTING DIODE DEVICE - A light-emitting diode device includes a substrate, an epitaxial layer and a first electrode. The epitaxial layer is disposed on the substrate. The first electrode is disposed on the epitaxial layer and includes a connecting portion and a conductive finger. The conductive finger has a first end and a second end, and the first end is connected to the connecting portion. At least one portion of the conductive finger is tapered along an extending direction of the conductive finger.06-13-2013
20130146935SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THEREOF - Provided is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure disposed under an insulating layer having a plurality of holes. A first electrode is disposed on the insulating layer and a second electrode disposed is disposed under the light emitting structure. A conductive supporting member is disposed under the second electrode. The plurality of contact protrusions are disposed in the holes of the insulating layer and include filler connected to the first conductive semiconductor layer and disposed in the plurality of holes. The conductive supporting member physically contacts with the second electrode and has a thickness thicker than that of the insulating layer. The first electrode is located at a higher position than an entire region of the insulating layer and the insulating layer is located at a higher position than an entire region of the light emitting structure.06-13-2013
20130146936LIGHT EMITTING DIODE CHIP, LIGHT EMITTING DIODE PACKAGE STRUCTURE, AND METHOD FOR FORMING THE SAME - A light emitting diode chip, a light emitting diode package structure and a method for forming the same are provided. The light emitting diode chip includes a bonding layer, which has a plurality of voids, or a minimum horizontal distance between a surrounding boundary of the light emitting diode chip and the bonding layer is larger than O. The light emitting diode chip, the light emitting diode package structure and the method may improve the product yields and enhance the light emitting efficiency.06-13-2013
20130146937MOUNTING SUBSTRATE, LIGHT-EMITTING DEVICE, AND LAMP - A substrate having a mounting surface on which an LED is mounted, including: a conductive member provided on the mounting surface and including an electrode and wiring which are electrically connected to the LED; a fitting portion to which a metal body is fitted; and a discharge-reducing portion provided between the conductive member and the fitting portion and having a face tilted with respect to a surface of the mounting substrate, thereby increasing a creeping distance between the conductive member and the fitting portion compared to the case where the discharge-reducing portion is not provided.06-13-2013
20130153952LIGHT EMITTING DEVICE, AND PACKAGE ARRAY FOR LIGHT EMITTING DEVICE - A light emitting device includes a substantially cuboid package and a light emitting element. The package is made up of a molded article, and first and second leads each embedded in the molded article. The first lead has a first terminal component exposed at the boundary between a first side face, a bottom face, and a rear face contiguous with the bottom face and opposite a light emission face. The second lead has a second terminal component exposed at the boundary between a second side face opposite the first side face, the bottom face, and the rear face. The first terminal component has a first terminal concavity whose opening is contiguous with the first side face, the bottom face, and the rear face. The second terminal component has a second terminal concavity whose opening is contiguous with the second side face, the bottom face, and the rear face.06-20-2013
20130153951SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device includes a lamination of semiconductor layers including a first layer of a first conductivity type, an active layer, and a second layer of a second conductivity type; a transparent conductive film formed on a principal surface of the lamination and having an opening; a pad electrode formed on part the opening; and a wiring electrode connected with the pad electrode, formed on another part of the opening while partially overlapping the transparent conductive film; wherein contact resistance between the transparent conductive film and the lamination is larger than contact resistance between the wiring electrode and the lamination. Field concentration at the wiring electrode upon application of high voltage is mitigated by the overlapping transparent conductive film.06-20-2013
20080197377PHOTONIC SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD - A photonic semiconductor device which includes a semiconductor layer having a ridge-form protruding part formed on a semiconductor substrate. A resin layer is formed on surface parts on both sides of the protruding part so that the protruding part is embedded, and a first insulating film includes an opening that is formed on the resin layer which exposes an upper surface of the protruding part and a portion of a upper surface of the resin layer on both sides of the protruding part. A first electrode is formed in the opening so as to cover the upper surface of the protruding part, and electrically couple to an upper part of the protruding part; and a second electrode, which electrically couples to the first electrode, is formed on the first electrode and the first insulation film.08-21-2008
20080197376Method for Producing an Optical, Radiation-Emitting Component and Optical, Radiation-Emitting Component - The invention related to a method for producing an optical and a radiation-emitting component by a molding process, and to an optical and a radiation-emitting component having well-defined viscosity.08-21-2008
20080197375Lateral-type light-emitting diode and method of manufacture thereof - A lateral-type light-emitting diode and a method of manufacture thereof are disclosed. The manufacture method comprises the steps of: (1) forming an outer shell on a substrate on which two metal electrodes are mounted; (2) forming chips and bonding wires on the inside of the outer shell; (3) injecting a transparent resin into the outer shell for forming a light-emitting diode package; and (4) finishing the manufacture process by cutting apart the center region of the light-emitting diode package between these two chips. The outer shell of the obtained lateral-type light-emitting diode is open on one side so the thickness of the lateral-type light-emitting diode can be reduced.08-21-2008
20080197374High-power light-emitting diode - A high-power light-emitting diode comprises a pillar, at least one light-emitting chip, a substrate, at least two conducting wires, and a transparent layer. The pillar has an integrally cast structure. The pillar has a block on which a recessed cup is formed. In addition, a screw bolt is extended from a lower portion of the block. The light-emitting chip is mounted on the inside of the recessed cup formed on the block of the pillar. Two conducting layers are mounted on the substrate. The substrate is located to encircle the recessed cup on the block. The light-emitting chip is connected with the substrate via these two conducting wires. The recessed cup, the light-emitting chip, and the substrate are covered with the transparent layer. Accordingly, the heat energy can be dissipated quickly and the product can be assembled easily.08-21-2008
20130126938Optoelectronic Semiconductor Element and Associated Method of Production by Direct Welding of Glass Housing Components by Means of Ultra Short Pulsed Laser without Glass Solder - An optoelectronic semiconductor element having a light source, a housing and electrical terminals, wherein the optoelectronic semiconductor element comprises components, which are produced from glass, and wherein at least two components touch at boundary surfaces adjusted to one another and are welded to one another directly there.05-23-2013
20110220958ILLUMINATION DEVICE AND METHOD FOR MANUFACTURING THE SAME - The present invention relates to a method for easily manufacturing an illumination device in which a surface mount chip-type LED is used, and a wiring board is formed into a truncated conical or another shape. The method includes, in a flexible strip-like wiring board having a partial ring or a linear shape, providing a through-hole T for filling with solder paste S at a wiring end portion L to be connected with a terminal of an LED, temporarily fixing the LED with bond B onto the wiring board held in a plate-like state, filling the through-hole T with the solder paste S from a back surface of the wiring board, rounding the wiring board mounted with the LED into a truncated conical or cylindrical shape, and reflowing the wiring board in the rounded state to solder the LED.09-15-2011
20110220956SILICON LIGHT-EMITTING ELEMENT - A silicon light-emitting element includes a first conductivity type silicon substrate 09-15-2011
20110220955LIGHT EMITTING DEVICE - Disclosed is a light emitting device. The light emitting device includes a body, a plurality of electrodes in the body, a light emitting chip installed in the body and electrically connected to the electrodes to generate light, and a thermo electric cooler module electrically connected to the electrodes and formed at a lower portion of the light emitting chip to cool the light emitting chip.09-15-2011
20100301376SIDE VIEW TYPE LED PACKAGE - In a side view type light emitting diode (LED) package, a lead frame portion and lead frame electrical contact portions are exposed outside a package body to serve as an additional heat dissipation path. The side view type LED package includes an LED chip, a package body having a side surface with an opening for receiving the LED chip, and lead frames for applying a current to the LED chip. The lead frames include inner leads electrically connected to the LED chip within the package body; electrical contact lower legs extending from the inner leads to a lower portion of the package body and exposed outside the package body in the vicinity of a lower surface of the package body perpendicular to the side surface; and a heat dissipation means extending, separately from the electrical contact lower legs, from at least one of the inner leads outside the package body.12-02-2010
20100301374LED PACKAGE STRUCTURE - An LED package structure includes a lead frame, an LED chip disposed on the lead frame, a fuse disposed on the lead frame and electrically connected to the lead frame, and an encapsulation. The fuse is electrically connected to the LED chip in series.12-02-2010
20120273835LED PACKAGE WITH TOP-BOTTOM ELECTRODE - An LED package with an extended top electrode and an extended bottom electrode is made from a single metal sheet, one manufacturing process embodiment includes: preparing a piece of single metal sheet, forming a first metal and a coplanar second metal, mounting an LED on an inner end of the first metal, wire-bonding top electrode to an inner end of the second metal, encapsulating at least the LED and the bonding wire with a protection glue, bending an outer end of the first metal upward twice 90 degrees to form a top flat as an extended top electrode of the package, and bending an outer end of the second metal downward twice 90 degrees to form a bottom flat as an extended bottom electrode of the package.11-01-2012
20120273834LIGHT-EMITTING DEVICE AND ELECTRONIC DEVICE - An object is to provide a light-emitting device having a structure in which an external connection portion can easily be connected and a method for manufacturing the light-emitting device. A light-emitting device includes a lower support 11-01-2012
20120273833Light Emitting Diode Package - A light emitting diode (LED) package including a carrier, a housing, at least one LED chip and at least one electrostatic discharge protector (ESD protector) is provided. The housing encapsulating a portion of the carrier has at least one first opening, at least one second opening and a barricade. The barricade separates the first opening from the second opening. The first opening and the second opening expose a first surface of the carrier. The LED chip is disposed on the first surface of the carrier, located in the first opening, and electrically connected to the carrier. The ESD protector is disposed on the first surface of the carrier, located in the second opening, and electrically connected to the carrier.11-01-2012
20120273832LIGHT EMITTING DEVICE PACKAGE - A light emitting device package and a method for manufacturing the same are provided. The light emitting device package comprises a package body comprising a cavity at an upper portion; a first and second metal layers on the cavity of the package body; an open area recessed in the cavity; a first metal plate disposed in the open area and spaced apart from the first and second metal layers; a semiconductor device disposed on the first metal plate and electrically connected to at least one of the first and the second metal layers; and a resin material in the cavity.11-01-2012
20120273831SEMICONDUCTOR DEVICE, PROCESS FOR PRODUCING SAME, AND DISPLAY DEVICE11-01-2012
20120273830LIGHT EMITTING DIODE CHIP AND METHOD OF MANUFACTURING THE SAME - An LED chip includes a substrate, a first type semiconductor layer, a light-emitting layer, a second type semiconductor layer, a first electrode and a second electrode formed on the substrate in sequence. A surface of the first type semiconductor layer away from the substrate comprises an exposed first area and a second area covered by the light-emitting layer. The first electrode is formed on the exposed first area of the substrate. A number of recesses are defined in the second area of the surface of the first type semiconductor layer. The recesses are spaced apart from each other and arranged in sequence in a direction away from the first electrode; depths of the recesses gradually decrease following an increase of a distance between the recesses and the first electrode. The second electrode is formed on the second type semiconductor layer.11-01-2012
20120273829METHOD FOR MANUFACTURING LIGHT EMITTING DIODES AND LIGHT EMITTING DIODES OBTAINED THEREBY - A method for manufacturing LEDs includes following steps: forming circuit structures on a substrate, each circuit structure having a first metal layer and a second metal layer formed on opposite surfaces of the substrate and a connecting section interconnecting the first and second metal layers; cutting through each circuit structure along a middle of the connecting section to form first and second electrical connecting portions insulated from each other via a gap therebetween; arranging LED chips on the substrate and electrically connecting the LED chips to the first and second electrical connecting portions; forming an encapsulation on the substrate to cover the LED chips; and cutting through the substrate and the encapsulation between the first and second electrical connecting portions of neighboring circuit structures to obtain the LEDs.11-01-2012
20120273828LIGHT EMITTING DIODE - A light emitting diode includes a substrate, a first semiconductor layer, an active layer and a second semiconductor layer. The first semiconductor layer, the active layer and the second semiconductor layer are stacked on one side of the substrate in that order. The first semiconductor layer is oriented to the substrate. A number of channels are defined between the first semiconductor layer and the substrate.11-01-2012
20120273827LIGHT EMITTING DIODE - A light emitting diode includes a first semiconductor layer, an active layer, a second semiconductor layer, an upper electrode, and a lower electrode. The active layer is sandwiched between the first semiconductor layer and the second semiconductor layer. The lower electrode is electrical connected with the first semiconductor layer, and the upper electrode is electrical connected with the second semiconductor layer. A surface of the second semiconductor layer away from the active layer is used as the light extraction surface. A surface of the first semiconductor layer connected with the lower electrode is a patterned surface comprising a plurality of grooves.11-01-2012
20120273826LED PACKAGE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, an LED package includes a first leadframe and a second leadframe mutually-separated, an LED chip and a resin body. The LED chip is provided above the first and second leadframes. One terminal of the LED chip is connected to the first leadframe. One other terminal is connected to the second leadframe. The resin body covers an entire upper surface, a portion of a lower surface, and a portion of an end surface of each of the first and second leadframes. The resin body covers the LED chip. Remaining portions of the lower surface and the end surface of each of the first and second leadframes are exposed on the resin body. First and second recesses are made between the remaining portions of the first and second leadframes. An inner surface of each of the first and second recesses is not covered with the resin body.11-01-2012
20110233599LIGHT-EMITTING DEVICE - According to one embodiment, a light-emitting device includes a semiconductor stacked body and a pad electrode. The semiconductor stacked body has a surface and includes a light-emitting layer. The surface has protruding portions. The pad electrode is provided on one of a top surface of the protruding portions and a bottom surface around the protruding portions.09-29-2011
20110233598LIGHT EMITTING DIODE PACKAGE AND MANUFACTURING METHOD THEREOF - A light emitting diode package includes a metallic substrate, a light emitting diode chip, and a buffer layer. The light emitting diode chip is arranged on the metallic substrate. The buffer layer is located between and connected to the metallic substrate and the light emitting diode chip. The buffer layer includes a base material and a number of conducting particles essentially mixed in the base material. The base material is soft epoxy. Each of the conducting particles includes a resin core and a metallic layer formed on an exterior surface of the resin core. The conducting particles are configured for electrically connecting the light emitting diode chip to the metallic substrate.09-29-2011
20110233603SEMICONDUCTOR LIGHT-EMITTING DEVICE - The present disclosure relates to a semiconductor light-emitting device including: a plurality of semiconductor layers having a first semiconductor layer with a first conductivity, a second semiconductor layer with a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer and generating light by recombination of electrons and holes; a bonding pad electrically connected to the plurality of semiconductor layers; a first electrode spread over the plurality of semiconductor layers; and a second electrode extended from the bonding pad to the first electrode and electrically connecting the bonding pad to the first electrode.09-29-2011
20110233602LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM - Disclosed are a light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises a substrate; a light emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, which are formed on the substrate such that a part of the first conductive semiconductor layer is exposed upward; schottky contact regions on the second conductive semiconductor layer; a second electrode on the second conductive semiconductor layer; and a first electrode on the exposed first conductive semiconductor layer, wherein a distance between the schottky contact regions narrowed as the schottky contact regions are located closely to a mesa edge region.09-29-2011
20110233600WHITE ORGANIC LIGHT-EMITTING DIODE - A white organic light-emitting diode (WOLED) includes a transparent electrode, a blue-complementary light-emitting layer, a translucent electrode, a blue light-emitting layer, and a non-transparent electrode. The blue-complementary light-emitting layer is disposed on the transparent electrode. The transparent electrode and the translucent electrode include a first voltage. The blue light-emitting layer is disposed on the translucent layer. The non-transparent electrode is disposed on the blue light-emitting layer. The translucent electrode and the non-transparent electrode include a second voltage.09-29-2011
20100314658LIGHT EMITTING DEVICE - A light emitting device includes a package equipped on a front face with a window for installing a light emitting element, and outer lead electrodes that protrude from a bottom face of the package. The package has, on the bottom face, two side face convex components provided on the side face sides and a center convex component provided at a center. The outer lead electrodes are housed in a concave components defined by the side face convex components and the center convex component. The side face convex component has groove provided on the side face.12-16-2010
20100314657OPTOELECTRONIC DEVICE - A optoelectronic device comprises a semiconductor stack layer; a first transparent conductive oxide (abbreviate as “TCO” hereinafter) layer located on the semiconductor stack layer, wherein the first TCO layer has at least one opening; and a second TCO layer covering the first TCO layer, wherein the second TCO layer is filled into the opening of the first TCO layer and contacted with the semiconductor stack layer, and one of the first TCO layer and the second TCO layer forms an ohmic contact with the semiconductor stack layer.12-16-2010
20100314656LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM - Disclosed are a light emitting device, a method of manufacturing the same, a light emitting device package, and a lighting system. The light emitting device includes a conductive support member, a light emitting structure layer including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on the conductive support member, and an electrode on the light emitting structure layer. The conductive support member has a curved lateral surface recessed inward.12-16-2010
20100314655Light Emitting Assemblies and Portions Thereof - Apparatus may be provided including a high power light emitting diode (LED) unit, at least one printed circuit board, and an interfacing portion of a heat sink structure. The high power LED unit includes at least one LED die, at least one first lead and at least one second lead, and a heat sink interface. The at least one printed circuit board includes a conductive pattern configured to connect both the at least one first lead and the at least one second lead to a current source. The interfacing portion of the heat sink structure is that portion through which a majority of heat of the heat sink interface is transmitted. The interfacing portion is directly in touching contact with a majority of a heat transfer area of the heat sink interface.12-16-2010
20130153950GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - The light-emitting device has a semiconductor layer including a p-layer, a light-emitting layer, and an n-layer, which are formed of a Group III nitride semiconductor, and an n-electrode on the n-layer. The device also has a device isolation trench which runs along the outer periphery of the semiconductor layer and which provides the semiconductor layer with a mesa shape; and an insulation film continuously provided on first to third regions, the first region being an outer peripheral region of the n-layer, the second region being the side surface of the trench, and the third region being the bottom surface of the device isolation trench. The n-electrode consists of two pad portions and a wire trace portion. The outer peripheral wire trace portion is formed as a frame completely contouring the periphery of the device.06-20-2013
20110291152LED LEAD FRAME WITH WATER-REPELLENT LAYER - An LED lead frame includes a housing having a cavity for receiving an LED chip, and a pair of conductive leads mounted with the housing. Each lead includes an embedded section retained in the housing. The embedded section is plated with a silver layer thereon and a water-repellent layer disposed on the silver layer.12-01-2011
20130119429LIGHT-EMITTING ELEMENT AND THE MANUFACTURING METHOD THEREOF - A light-emitting element includes a light-emitting stack includes: a first semiconductor layer; an active layer formed on the first semiconductor layer; and a second semiconductor layer formed on the active layer; a recess structure formed through the second semiconductor layer, the active layer, and extended in the first semiconductor layer, wherein the first semiconductor layer includes a contact region defined by the recess structure; a first electrode structure including a first contact portion on the contact region of the first semiconductor layer, and a second contact portion laterally extended from the first contact portion into the first semiconductor layer; and a dielectric layer formed on side surfaces of the second semiconductor layer and the active layer to insulate the second semiconductor layer and the active layer from the first contact portion.05-16-2013
20130119428LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, AND ELECTRONIC DEVICE - The present invention provides a light-emitting element, a light-emitting device and an electronic device in which an optical path length through which generated light goes can be changed easily. The present invention provides a light-emitting element including a light-emitting layer between a first electrode and a second electrode, and a mixed layer in contact with the first electrode; in which the light-emitting layer includes a light-emitting substance; the mixed layer includes a hole transporting substance and a metal oxide showing an electron accepting property to the hole transporting substance, and has a thickness of 120 to 180 nm, and when a voltage is applied between the first electrode and the second electrode such that a potential of the first electrode is higher than that of the second electrode, the light-emitting substance emits light.05-16-2013
20110303945SEMICONDUCTOR ARRANGEMENT AND METHOD OF PRODUCING A SEMICONDUCTOR ARRANGEMENT - A semiconductor arrangement including at least one lead arrangement with a top and a bottom opposite the top; a least one solder resist layer which partially covers the top and the bottom, at least sub-zones of the top and the bottom, which are not covered by the solder resist layer, forming electrical base members; an optoelectronic semiconductor element, which is mounted on at least one of the base members on the top of the lead arrangement and is connected electrically conductively therewith, and an encapsulant applied at least to the top of the lead arrangement, the encapsulant covering up the semiconductor element and lying at least partially against the solder resist layer, wherein the base members are bordered all round by the solder resist layer.12-15-2011
20110303944Housing for an Optoelectronic Component - A housing (12-15-2011
20110303943ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - An Organic light-emitting display apparatus capable of preventing permeation of external impurities such as oxygen or water vapor and enhancing impact resistance, and a method of manufacturing the organic light-emitting display apparatus. The organic light-emitting display apparatus includes a first substrate; a display unit disposed on the first substrate; a second substrate disposed over the display unit; and a sealing member by which the first substrate is combined with the second substrate. The sealant includes a first sealant which includes a filler and is spaced apart from the first substrate and the second substrate, and a second sealant which contacts the first substrate and the second substrate and covers at least a part of the first sealant.12-15-2011
20130187194PEC BIASING TECHNIQUE FOR LEDS - Each LED in an array of LEDs mounted on a submount wafer has at least a first semiconductor layer exposed and connected to a first electrode of each LED. The submount wafer has a first metal portion bonded to the first electrode of each LED for providing an energization current to each LED. The submount wafer also has a second metal portion running along and proximate to the first metal portion but not electrically connected to the first metal portion. The second metal portion may be interdigitated with the first metal portion. The second metal portion is connected to a bias voltage. When the wafer is immersed in an electrically conductive solution for electrochemical (EC) etching of the exposed first semiconductor layer, the solution electrically connects the second metal portion to the first metal portion for biasing the first semiconductor layer during the EC etching.07-25-2013
20110309406LIGHT-EMITTING APPARATUS PACKAGE, LIGHT-EMITTING APPARATUS, BACKLIGHT APPARATUS, AND DISPLAY APPARATUS - A light-emitting apparatus package of the present invention includes (i) an electrically insulated ceramic substrate, (ii) a first concave section formed in the direction of thickness of the ceramic substrate so as to form a light exit aperture in a surface of the ceramic substrate, (iii) a second concave section formed within the first concave section in the further direction of thickness of the ceramic substrate so that one or more light-emitting devices are provided therein, (iv) a wiring pattern for supplying electricity, which is provided in the first concave section, and (v) a metalized layer having light-reflectivity, which is (a) provided between the light-emitting device and the surface of the second concave section of the substrate, and (b) electrically insulated from the wiring pattern. On the account of this, the light-emitting apparatus package in which heat is excellently discharged and light is efficiently utilized and a light-emitting apparatus in which the light-emitting apparatus package is used can be obtained.12-22-2011
20110309403LIGHTING APPARATUS AND METHOD OF MANUFACTURING THE LIGHTING APPARATUS - The invention of the present application provides a lighting apparatus that has superior waterproofing property, durability, impact resistance, and pressure resistance and that can be used in various places such as a construction site, a plastic greenhouse, a poultry house, water, or seawater.12-22-2011
20110309402PIXEL STRUCTURE AND METHOD OF MAKING THE SAME - A pixel structure includes a substrate, a gate line and a gate electrode disposed on the substrate, an insulating layer covering the substrate, a semiconductor layer disposed on the insulating layer, a data line, a source electrode, and a drain electrode which are disposed on the insulating layer and the semiconductor layer, a planarization layer disposed on the data line, the source electrode, and the drain electrode, and a pixel electrode disposed on the planarization layer. The planarization layer has a through hole exposing the drain electrode. The pixel electrode is electrically connected to the drain electrode via the through hole and includes an opaque main electrode and a plurality of transparent branch electrodes disposed on the planarization layer. One end of each transparent branch electrode is electrically connected to the opaque main electrode.12-22-2011
20110309401LIGHT EMITTING DIODE MODULE - A light emitting diode (LED) module has a hexagonal substrate and at least one LED mounted on the substrate. The substrate may have three terminal sets and three sockets. Each terminal set of one LED module has a positive terminal and a negative terminal plugged respectively to a positive jack and a negative jack of each socket of the other LED module. The substrate may have six terminal sets. Each terminal set of one LED module has a positive terminal and a negative terminal respectively connected to the positive and negative terminals of each set of the other LED module through connectors. The LED modules are connected in parallel and the hexagonal substrate allows the LED modules to be arranged in different patterns according to variable products. Moreover, replacing the LED module with a new one is easy, low cost and saves resources.12-22-2011
20130187186Optoelectronic Component - An optoelectronic component with short circuit protection is provided, comprising a first electrode layer (07-25-2013
20130187188MOLDED PACKAGE AND LIGHT EMITTING DEVICE - A molded package includes a molded resin and a lead. The molded resin has a recess portion provided on an upper surface of the molded resin to accommodate a light emitting component. The lead is partially exposed from a bottom surface of the recess portion of the molded resin to be electrically connected to the light emitting component and extends below a side wall of the recess portion. The lead has a groove formed on a surface of the lead at least partially along the side wall. The groove has an inside upper edge and an outside upper edge and is filled with the molded resin so that the inside upper edge is exposed from the bottom surface of the recess portion and the outside upper edge is embedded within the molded resin.07-25-2013
20110316037SEMICONDUCTOR LIGHT EMISSION ELEMENT - A semiconductor light emission element (12-29-2011
20120007136LIGHT EMITTING APPARATUS AND LIGHT UNIT HAVING THE SAME - Provides are a light emitting apparatus and a light unit having the same. The light emitting apparatus comprises a light emitting device comprising a light emitting element and a plurality of external leads, and a plurality of electrode pads under the light emitting device.01-12-2012
20120007135SEMICONDUCTOR DEVICE - An exemplary semiconductor device is provided. The semiconductor device includes a semiconductor stacked layer and a conductive structure. The conductive structure is located on the semiconductor stacked layer. The conductive structure includes a bottom portion and a top portion on opposite sides thereof. The bottom portion is in contact with the semiconductor stacked layer. A ratio of a top width of the top portion to a bottom width of the bottom portion is less than 0.7. The conductive structure can be a conductive dot structure or a conductive line structure.01-12-2012
20120007134PLANAR LIGHT EMITTING DEVICE - Planar light emitting device includes: anode and cathode feeding parts formed on first surface side of transparent substrate and electrically connected to quadrilateral planar anode and cathode, respectively; quadrilateral frame shaped anode auxiliary electrode formed at the whole circumference of surface of the planar anode; anode feeding auxiliary electrode integrally and continuously formed to the auxiliary electrode and laminated on anode feeding part. Light emitting part is formed of a region where only organic layer intervenes between the planar anode and cathode. Distance between predetermined two parallel sides of the four sides of the light emitting part and the peripheral border of the transparent substrate is smaller than distance between the other two parallel sides and the peripheral border. The cathode and anode feeding parts are located along said other two parallel sides. The anode feeding part is located at each side, in width direction, of the cathode feeding part.01-12-2012
20120007132REDUCTION OF ETCH MICROLOADING FOR THROUGH SILICON VIAS - The patterns (or layout), and pattern densities of TSVs described above provide layout of TSVs that could be etched with reduced etch microloading effect(s) and with good within-die uniformity. The patterns and pattern densities of TSVs for different groups of TSVs (or physically separated groups, or groups with different functions) should be fairly close amongst different groups. Different groups of TSVs (or TSVs with different functions, or physically separated TSV groups) should have relatively close shapes, sizes, and depths to allow the aspect ratio of all TSVs to be within a controlled (and optimal) range. The size(s) and depths of TSVs should be carefully selected to optimize the etching time and the metal gap-fill time.01-12-2012
20130193473Lighting Device - An object of the present invention is to reduce the thickness of a lighting device using an electroluminescent material. Another object of the present invention is to simplify the structure of a lighting device using an electroluminescent material to reduce cost. A light-emitting element having a stacked structure of a first electrode layer, an EL layer, and a second electrode layer is provided over a substrate having an opening in its center, and a first connecting portion and a second connecting portion for supplying electric power to the light-emitting element are provided in the center of the substrate (in the vicinity of the opening provided in the substrate).08-01-2013
20130193474LIGHT EMITTING ELEMENT WITH IMPROVED LIGHT EXTRACTION EFFICIENCY, LIGHT EMITTING DEVICE COMPRISING THE SAME, AND FABRICATING METHOD OF THE LIGHT EMITTING ELEMENT AND THE LIGHT EMITTING DEVICE - Provided is a light emitting element, a light emitting device including the same, and fabrication methods of the light emitting element and light emitting device. The light emitting device comprises a substrate, a light emitting structure including a first conductive layer of a first conductivity type, a light emitting layer, and a second conductive layer of a second conductivity type which are sequentially stacked, a first electrode which is electrically connected with the first conductive layer; and a second electrode which is electrically connected with the second conductive layer and separated apart from the first electrode, wherein at least a part of the second electrode is connected from a top of the light emitting structure, through a sidewall of the light emitting structure, and to a sidewall of the substrate.08-01-2013
20130193475SEMIFINISHED PRODUCT AND METHOD FOR PRODUCING A LIGHT-EMITTING DIODE - The invention relates to a method and a semifinished product for producing a light-emitting diode including: a flexible supporting material; a first and a second contact area, arranged on the supporting material, for producing electrical connections; a light-emitting diode chip or a holder for a light-emitting diode chip, arranged on the supporting material; a foldable flap, formed into the supporting material, the flap being arranged in such a way that it can be folded towards and/or onto the light-emitting diode chip. Arranged on the foldable flap is at least a first electrical connecting web, which is connected to the first contact area and can be connected to a first terminal of the light-emitting diode chip by folding of the flap.08-01-2013
20120018773ALTERNATING-CURRENT LIGHT EMITTING DIODE STRUCTURE WITH OVERLOAD PROTECTION - The present invention relates to an alternating current (AC) light emitting diode (LED) structure with overload protection, which comprises an AC LED, a heat dissipating unit and an overload protecting unit. The AC LED is thermally connected with the heat dissipating unit, and the overload protecting unit is connected in series between the AC LED and a power source. Thus, when an overload current is inputted to the AC LED structure, the temperature of the overload protecting unit will rise to disconnect the AC LED from the power source. In this way, an open-circuit status can be produced timely in the AC LED structure to block the power input into the AC LED for purpose of protection against overload.01-26-2012
20120018772LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE LIGHT EMITTING DEVICE - A light emitting device includes a base body forming a recess defined by a bottom surface and a side wall thereof, a conductive member whose upper surface being exposed in the recess and whose lower surface forming an outer surface, a protruding portion disposed in the recess, a light emitting element mounted in the recess and electrically connected to the conductive member, and a sealing member disposed in the recess to cover the light emitting element. The base body has a bottom portion and a side wall portion integrally formed of a resin, an inner surface of the side wall portion is the side wall defining the recess and has a curved portion, and the protruding portion is disposed in close vicinity to the curved surface. With this arrangement, a thin and small-sized light emitting device excellent in light extraction efficiency and reliability can be obtained.01-26-2012
20120018771LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE AND SEMICONDUCTOR DEVICE - It is an object of the present invention to provide a semiconductor device, in particular, a light emitting element which can be easily manufactured with a wet method. One feature of the invention is a light emitting device including a transistor and a light emitting element. In the light emitting element, an organic layer, a light emitting layer, and a second electrode are sequentially formed over a first electrode, and the transistor is electrically connected to the light emitting element through a wiring. Here, the wiring contains aluminum, carbon, and titanium. The organic layer is formed by a wet method. The first electrode which is in contact with the organic layer is formed from indium tin oxide containing titanium oxide.01-26-2012
20120018770OLED LIGHT SOURCE HAVING IMPROVED TOTAL LIGHT EMISSION - An OLED light source has a reduced area metal cathode such as a fine mesh cathode and a highly conductive electron conduction layer adjacent the cathode that allows for rapid lateral conduction of electrical current beneath the cathode to cause exciton formation over substantially the entire light emitting area of the OLED. By substantially reducing the coverage area of the cathode, cathode-exciton energy transfer (cathode quenching) produced by the presence of a metal cathode can be substantially reduced, and total light output from the OLED increased.01-26-2012
20120018769Light-Emitting Device, Lighting Device, and Manufacturing Method of Light-Emitting Device - It is an object to provide a light-emitting device which has high power efficiency and high light-extraction efficiency and emits light uniformly in a plane. It is another object to provide a manufacturing method of the light-emitting device. It is another object to provide a lighting device including the light-emitting device. One embodiment of the present invention provides a light-emitting device which includes: a first electrode provided over a substrate; a layer containing a light-emitting organic compound provided over the first electrode; an island-shaped insulating layer provided over the layer containing the light-emitting organic compound; an island-shaped auxiliary electrode layer provided over the island-shaped insulating layer; and a second electrode having a property of transmitting visible light provided over the layer containing the light-emitting organic compound and the island-shaped auxiliary electrode layer.01-26-2012
20120018768LED-BASED LIGHT EMITTING DEVICES - An LED-based light emitting device comprises: a substrate; at least one LED die mounted to the substrate; at least one bond wire that electrically connects the LED die; and a light transmissive material (silicone) encapsulating the at least one LED die and at least one bond wire. The at least one bond wire has a hook-shaped portion that loops back on itself.01-26-2012
20120018767Light-Emitting Device, Lighting Device, and Manufacturing Method of Light-Emitting Device - The manufacturing method of the light-emitting device is provided in which an auxiliary electrode in contact with an electrode formed using a transparent conductive film of a light-emitting element is formed using a mask, and direct contact between the auxiliary electrode and an EL layer is prevented by oxidizing the auxiliary electrode. Further, the light-emitting device manufactured according to the method and the lighting device including the light-emitting device are provided.01-26-2012
20120018766LIGHT EMITTING ELEMENT - A semiconductor light emitting element has a first electrode and a second electrode provided on a semiconductor layer; the first electrode has a first external connector and a first extended portion and second extended portion that extend from the first external connector, the second electrode has a second external connector, and a third extended portion, a fourth extended portion, and a fifth extended portion that extend from the second external connector, the third extended portion extends along the first extended portion and farther outside than the first extended portion, the fourth extended portion extends along the second extended portion and farther outside than the second extended portion, and the fifth extended portion extends an area between the third extended portion and the fourth extended portion to the first external connector side, and the fifth extended portion is either on a line that links a point on the first extended portion at the position closest to the second external connector and a point on the second extended portion at the position closest to the second external connector, or closer to the second external connector side than the line.01-26-2012
20120018765SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF PRODUCING THE SAME - A semiconductor light-emitting device includes a substrate, an n-type semiconductor layer located above the substrate, a semiconductor light-emitting layer located on the n-type semiconductor layer, a p-type semiconductor layer located on the semiconductor light-emitting layer. The semiconductor light-emitting device also includes an insulation film located on part of the p-type semiconductor layer in an unexposed section, a first transparent conductive film located on substantially the whole of the p-type semiconductor layer where the insulation film is not located in the unexposed section, and a second transparent conductive film located on the insulation film and the first transparent conductive film. The semiconductor light-emitting device further includes an n-side electrode located above the n-type semiconductor layer in an exposed section and electrically connected to the n-type semiconductor layer, and a p-side electrode located on the second transparent conductive film above the insulation film and electrically connected to the p-type semiconductor layer.01-26-2012
20120018763RADIATION-EMITTING SEMICONDUCTOR CHIP AND METHOD FOR PRODUCING A RADIATION-EMITTING SEMICONDUCTOR CHIP - A radiation-emitting semiconductor chip includes: a carrier and a semiconductor body with a semiconductor layer sequence including an active region that generates radiation, a first semiconductor layer and a second semiconductor layer; wherein the active region is arranged between the first semiconductor layer and the second semiconductor layer; the first semiconductor layer is arranged on a side of the active region which faces away from the carrier; the semiconductor body comprises at least one recess which extends through the active region; the first semiconductor layer is electrically conductively connected to a first connection layer extending in the recess from the first semiconductor layer in a direction of the carrier; and the first connection layer is electrically connected to the second semiconductor layer via a protective diode.01-26-2012
20090050924DROOP-FREE HIGH OUTPUT LIGHT EMITTING DEVICES AND METHODS OF FABRICATING AND OPERATING SAME - Light emitting devices include a semiconductor light emitting diode that is configured to operate at a substantially droop-free quantum efficiency while producing warm white light output of at least about 100 lumens/cool white light output of at least about 130 lumens. The semiconductor light emitting diode may include a single semiconductor die of at least about 4 mm02-26-2009
20130200421Hybrid Transparent Conducting Materials - Illustrative embodiments of hybrid transparent conducting materials and applications thereof are disclosed. In one illustrative embodiment, a hybrid transparent conducting material may include a polycrystalline film and a plurality of conductive nanostructures randomly dispersed in the polycrystalline film. In another illustrative embodiment, a photovoltaic cell may include a transparent electrode comprising polycrystalline graphene that is percolation doped with metallic nanowires, where the metallic nanowires do not form a percolation network for charge carriers across the transparent electrode.08-08-2013
20130200422ORGANIC LIGHT EMITTING DIODE DISPLAY - An organic light emitting diode display includes a substrate, an organic light emitting diode provided on the substrate and including a first electrode, an organic emission layer, and a second electrode, a packed layer on the organic light emitting diode, and a protective layer on the packed layer, the protective layer including at least one of a graphene oxide and a graphene nitride.08-08-2013
20130200423OPTOELECTRONIC SEMICONDUCTOR DEVICE AND THE MANUFACTURING METHOD THEREOF - The present application provides an optoelectronic semiconductor device, comprising: a substrate; an optoelectronic system on the substrate; a barrier layer on the optoelectronic system, wherein the barrier layer thickness is not smaller than 10 angstroms; and an electrode on the barrier layer.08-08-2013
20130099272OPTOELECTRONIC SEMICONDUCTOR CHIP - An optoelectronic semiconductor chip includes a semiconductor body, having an n-conducting region and a p-conducting region, and a single n-type contact element, via which the n-conducting region can be electrically contact-connected through the p-conducting region.04-25-2013
20120086041LED PACKAGE - According to one embodiment, an LED package includes a first leadframe, a second leadframe, an anisotropic conductive film, an LED chip, and a resin body. The first leadframe and the second leadframe are mutually separated. The anisotropic conductive film is provided on the first leadframe and the second leadframe. The LED chip is provided on the anisotropic conductive film. The LED chip includes a first terminal and a second terminal provided on a face of the LED chip on the anisotropic conductive film side. The resin body is provided on the anisotropic conductive film to cover the LED chip. The first terminal is connected to the first leadframe via the anisotropic conductive film. The second terminal is connected to the second leadframe via the anisotropic conductive film.04-12-2012
20130207152LIGHT-EMITTING DEVICE - A light-emitting device includes a light-emitting element mounted on a lead frame, and a sealing material sealing the light-emitting element and having a thickness of not more than 1 mm and including a silicone resin as a main component. The sealing material includes a first gas barrier layer that a physical property value obtained by dividing a difference between a value of an average spin-spin relaxation time of 08-15-2013
20130207154OPTOELECTRONIC COMPONENT - An optoelectronic component has a semiconductor body including an epitaxial layer sequence, and a carrier substrate consisting of a semiconductor material connected to the semiconductor body by a solder layer, and through-connections. The carrier substrate includes a surface doping zone extending along a first main surface facing the semiconductor body. The surface doping zone includes a p-conductive region and an n-conductive region adjacent thereto, between which regions a pn-junction is formed. The n-conductive region electrically connects to a p-doped region of the epitaxial layer sequence via a first sub-region of the solder layer, and the p-conductive region electrically connects to an n-doped region of the epitaxial layer sequence via a second sub-region of the solder layer.08-15-2013
20130207155METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT, AND OPTOELECTRONIC SEMICONDUCTOR COMPONENT - A method of producing an optoelectronic semiconductor component includes arranging a semiconductor layer stack with a pn-junction on a substrate, lateral patterning of the semiconductor layer sack into a plurality of pairs of first semiconductor bodies and second semiconductor bodies spaced from one another in a lateral direction, detaching the substrate from the pairs of first semiconductor bodies and second semiconductor bodies, applying at least one pair of first semiconductor bodies and second semiconductor bodies to a connection carrier including electrical connection points and/or at least one conductor track, and electrically connecting the semiconductor bodies of a pair of first semiconductor bodies and second semiconductor bodies by the connection points and/or the at least one conductor track such that the pn-junction of the first semiconductor body connects in antiparallel to the pn-junction of the second semiconductor body.08-15-2013
20130207156OPTOELECTRONIC SEMICONDUCTOR CHIP AND METHOD FOR PRODUCING OPTOELECTRONIC SEMICONDUCTOR CHIPS - An optoelectronic semiconductor chip includes a carrier and a semiconductor body having a semiconductor layer sequence, the semiconductor body arranged on the carrier wherein an emission region and a detection region are formed in the semiconductor body having the semiconductor layer sequence; the semiconductor layer sequence includes an active region arranged between a first semiconductor layer and a second semiconductor layer and provided in the emission region to generate radiation; the first semiconductor layer is arranged on the side of the active region facing away from the carrier; and the emission region has a recess extending through the active region.08-15-2013