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With reflector, opaque mask, or optical element (e.g., lens, optical fiber, index of refraction matching layer, luminescent material layer, filter) integral with device or device enclosure or package

Subclass of:

257 - Active solid-state devices (e.g., transistors, solid-state diodes)

257079000 - INCOHERENT LIGHT EMITTER STRUCTURE

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DocumentTitleDate
20100001303RED EMITTING OXYNITRIDE LUMINESCENT MATERIALS - The invention relates to an improved red light emitting material of the formula M01-07-2010
20110175124LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, AND LIGHT EMITTING DEVICE PACKAGE - A light emitting device according to the embodiment includes a conductive support member having a step portion at an outer peripheral region thereof, a protective member for filling the step portion formed at the outer peripheral region of the conductive support member, a reflective layer over the conductive support member, and a light emitting structure over the reflective layer and the protective member.07-21-2011
20110175122LIGHT EMITTING DEVICE PACKAGE AND LIGHT UNIT HAVING THE SAME - A light emitting structure includes a package body including a conductive material, a nonconductive layer formed on a surface of the package body, a plurality of electrodes on the nonconductive layer, a plurality of protrusions from the electrodes, a light emitting device mounted to a plane of the package body and connected to the electrodes, and a transmissive resin member to encapsulate the light emitting device wherein at least the plane of the package body other than where the light emitting device is seated is substantially flat.07-21-2011
20090026477NOVEL PHOSPHOR AND FABRICATION OF THE SAME - The present invention provides a novel phosphor represent by the following general formula:01-29-2009
20130043502LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A light emitting device 02-21-2013
20110198654LIGHT EMITTING ELEMENT - A light emitting element includes an anode, a light transmitting cathode, and a light emitting layer sandwiched therebetween, formed on a surface of a substrate. Light emitted by the light emitting layer by voltage being applied between the electrodes is output from a surface toward the side of the light transmitting electrode. A light scattering layer for scattering evanescent light generated at the surface is provided on the surface of the light transmitting electrode. The light scattering layer has a first scattering portion having an uneven structure and a lower refractive index than the light emitting layer, and second scattering portions that fill at least the bottoms of recesses of the uneven structure and has a different refractive index from the first scattering portion. The distance between the bottoms of the recesses and the surface of the light transmitting electrode is a seepage depth of the evanescent light or less.08-18-2011
20110198640Semiconductor Light-Emitting Diode and Method for Producing a Semiconductor Light-Emitting Diode - A semiconductor light-emitting diode (08-18-2011
20130026522SURFACE-MOUNT LIGHT EMITTING DEVICE - A surface-mount light emitting device is provided comprising a light emitting element (01-31-2013
20130026519LIGHT-EMITTING DEVICE - A structure of a light-emitting device includes the following components: a substrate; an epitaxial structure on the substrate, the epitaxial structure including at least a first conductivity type semiconductor layer, a light-emitting active layer, and a second conductivity type semiconductor layer; a first electrode on the first conductivity type semiconductor layer; a transparent conductive layer between the first electrode and the first conductivity type semiconductor layer; and a three-dimensional distributed Bragg reflector (DBR) layer between the transparent conductive layer and the first conductivity type semiconductor layer.01-31-2013
20120199866REFLECTIVE ANODE ELECTRODE FOR ORGANIC EL DISPLAY - Disclosed is a reflective anode electrode for an organic EL display, which comprises a novel Al-based alloy reflective film. The reflective anode electrode is capable of assuring low contact resistance and high reflectance even in cases where the Al reflective film is in direct contact with an oxide conductive film such as an ITO or IZO film. In addition, when the Al reflective film is formed into a laminated structure together with the oxide conductive film, the work function of the surface of the upper oxide conductive film is equally high with the work function of a laminated structure that is composed of a general-purpose Ag-based alloy film and an oxide conductive film. Specifically disclosed is a reflective anode electrode for an organic EL display, which is formed on a substrate and characterized by comprising a laminated structure that is composed of an Al-based alloy film containing 0.1-6% by atom of Ag and an oxide conductive film that is formed on the Al-based alloy film so as to be in direct contact with the Al-based alloy film.08-09-2012
20120199865PHOSPHOR MIXTURES COMPRISING EUROPIUM-DOPED ORTHO-SILICATES - The invention relates to novel phosphor mixtures comprising three or more silicate phosphors. The invention furthermore relates to the use of these mixtures in electronic and electro-optical devices, in particular in light-emitting diodes (LEDs) for backlighting applications. The invention furthermore relates to LEDs comprising the phosphors.08-09-2012
20120199861SEMICONDUCTOR LIGHT EMITTING ELEMENT - A semiconductor light emitting element includes: a light emitting layer and a p-type semiconductor layer laminated on an n-type semiconductor layer; a transparent conductive layer laminated on the p-type semiconductor layer; a transparent insulating layer laminated on the transparent conductive layer and the exposed n-type semiconductor layer, the transparent insulating layer having plural tapered through-holes formed therein; a p-electrode formed on the transparent conductive layer with the transparent insulating layer interposed therebetween, the p-electrode being connected to the transparent conductive layer via the through-holes provided for the transparent insulating layer; and an n-electrode formed on the n-type semiconductor layer with the transparent insulating layer interposed therebetween, the n-electrode being connected to the n-type semiconductor layer via the through-holes provided for the transparent insulating layer.08-09-2012
20120199859ELECTROLUMINESCENT DISPLAY APPARATUS - A display apparatus includes an organic electroluminescent element, a protective layer provided in contact with the organic electroluminescent element and configured to cover the organic electroluminescent element, and a condenser lens provided in contact with the protective layer and on a light output side of the organic electroluminescent element. The condenser lens includes a convex surface having a sloping angle θ08-09-2012
20130026526LIGHT-EMITTING DIODE HOUSING COMPRISING FLUOROPOLYMER - A light-emitting diode housing comprising fluoropolymer is disclosed. The light-emitting diode housing supports a light-emitting diode chip and reflects at least a portion of the light emitted from the light-emitting diode chip.01-31-2013
20130026527LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE LIGHT EMITTING DEVICE - Provided is a light emitting device having strong bonding strength between the light emitting element and the wavelength converting member is provided. In the light emitting device, a light emitting element and a wavelength converting member are bonded. Particularly, the light emitting element has, from the wavelength converting member side, a first region and a second region, the wavelength converting member has, from the light emitting element side, a third region and a fourth region. The first region has an irregular atomic arrangement compared with the second region, the third region has an irregular atomic arrangement compared with the fourth region, and the first region and the third region are directly bonded.01-31-2013
20130026525LIGHT EMITTING DEVICES, SYSTEMS, AND METHODS OF MANUFACTURING - A light emitting device includes: a substrate; an n layer; an active light emitting region, a p layer; and a support portion configured to provide both mechanical support and improve light transmission disposed over a light emitting side of the device.01-31-2013
20130026524LIGHT EMITTING DIODE - A light emitting diode (LED) is provided. The LED comprises a semiconductor composite layer stacked laterally and a phosphor substrate. The phosphor substrate covers a lateral surface of the semiconductor composite layer.01-31-2013
20130026523CHIP PACKAGE AND METHOD FOR FORMING THE SAME - An embodiment of the invention provides a chip package which includes: a substrate having a first surface and a second surface; an optoelectronic device formed in the substrate; a conducting layer disposed on the substrate, wherein the conducting layer is electrically connected to the optoelectronic device; an insulating layer disposed between the substrate and the conducting layer; a first light shielding layer disposed on the second surface of the substrate; and a second light shielding layer disposed on the first light shielding layer and directly contacting with the first light shielding layer, wherein a contact interface is between the first light shielding layer and the second light shielding layer.01-31-2013
20130026521LIGHT EMITTING DEVICES AND METHODS OF MANUFACTURING THE SAME - The inventive concept provides light emitting devices and methods of manufacturing a light emitting device. The light emitting device may include a transparent substrate including a first region and a second region, a first transparent electrode disposed on a first surface of the transparent substrate, a second transparent electrode facing and spaced apart from the first transparent electrode, an organic light emitting layer disposed between the first and second transparent electrodes, an assistant electrode disposed between the first and second transparent electrodes and selectively masking the second region, and a light path changing structure disposed on a second surface of the transparent substrate and selectively masking the second region.01-31-2013
20130026520LIGHT-EMITTING DIODE PACKAGE AND METHOD FOR MANUFACTURING THE SAME - An LED package includes a substrate, an LED chip arranged on the substrate, and a light transmission layer arranged on a light output path of the LED chip. The substrate includes a first electrode and a second electrode separated and electrically insulated from the first electrode. The LED chip is electrically connected to the first electrode and the second electrode of the substrate. The light transmission layer comprises two parallel transparent plates and a fluorescent layer sandwiched between the two transparent plates. The LED package further includes a transparent encapsulation layer sealing the LED chip therein, and in one embodiment, the light transmission layer is located on the encapsulation layer and in another embodiment, the encapsulation layer also seals the light transmission layer therein. A method for manufacturing the LED package is also provided.01-31-2013
20090206356LIGHT-EMITTING DIODE - A through-hole extending from an element-mounting surface to a back surface of a substrate is formed along an edge area of a bottom surface of the substrate. This through-hole is filled with a conductive resin paste directly into a quarter through-hole made in the substrate. This makes the conductive resin paste firmly adhere to the substrate preventing the conductive resin paste from being peeling off from the quarter through-hole even if the through-hole is reduced in diameter or has a cross-sectional configuration.08-20-2009
20090206354Semiconductor light-emitting device - A semiconductor light-emitting device includes a support structure, and a light-emitting structure. The support structure includes a support substrate, and a support substrate side bonding layer disposed on one surface of the support substrate. The light-emitting structure includes a light-emitting structure side bonding layer bonded to the support substrate side bonding layer, a reflection region disposed on the support substrate side bonding layer opposite the support substrate, and a semiconductor multilayer structure including a light-emitting layer disposed on the reflection region opposite the light-emitting structure side bonding layer for emitting a light with a predetermined wavelength, and a light-extraction surface disposed on the light-emitting layer opposite the reflection region for reflecting diffusely the light. The reflection region includes a transparent layer of a material with a lower refractive index than that of the semiconductor multilayer structure, and a reflection layer of a metallic material. The transparent layer has such a thickness that interference caused by multiple reflection of light inputted to the transparent layer can be suppressed.08-20-2009
20090278145Semiconductor Light Emitting Device and Method for Manufacturing the Same - To provide a semiconductor light emitting device with a light extraction efficiency increased and a method for manufacturing the semiconductor light emitting device.11-12-2009
20100155761Light emitting device having a divalent europium-activated alkaline earth metal orthosilicate phoshor - A light emitting device includes a light emitting element comprising a nitride semiconductor and a phosphor that can absorb a part of light emitted from the light emitting element and can emit light of a wavelength different from that of the absorbed light. The phosphor comprises a silicate phosphor comprising three alkali earth metals.06-24-2010
20110180832LIGHT EMITTING DEVICE PACKAGE - A light emitting device package according to the embodiment includes a package body; a light emitting device over the package body; a first molding part having a first refractive index over the light emitting device; and a second molding part having a second refractive index lower than the first refractive index over the first molding part. A light emitting device package according to the embodiment includes a package body; a light emitting device over the package body; a resin layer including luminescence materials; a first molding part having a first refractive index over the resin layer; and a second molding part having a second refractive index lower than the first refractive index over the first molding part.07-28-2011
20120161177METHOD OF BONDING METAL AND GLASS USING OPTICAL CONTACT BONDING, METHOD OF MANUFACTURING DISPLAY APPARATUS USING THE METHOD OF BONDING, AND DISPLAY APPARATUS MANUFACTURED BY THE METHOD OF BONDING - A method of bonding metal and glass using an optical contact bonding includes depositing an optical contact bonding medium on a surface of a metal substrate; and bonding the metal substrate on which the optical contact bonding medium is formed to a glass substrate using optical contact bonding.06-28-2012
20100090236LIGHT EMITTING ELEMENT, METHOD FOR MANUFACTURING THE LIGHT EMITTING ELEMENT, OPTICAL ELEMENT AND METHOD FOR MANUFACTURING THE OPTICAL ELEMENT - Fine asperities are simply formed in the surface of a light emission surface to improve an luminous efficiency of a light emitting element. An LED element 04-15-2010
20100059771MULTI-LAYER LED PHOSPHORS - An LED assembly can have a plurality of different types of phosphors that are separated from one another in a manner that substantially mitigates the cannibalization of light emitted by at least one of the types of phosphors. By mitigating the cannibalization of light, brighter and more efficient white light LED assemblies can be provided. Such LED assemblies can be suitable for use in such applications as flashlights, displays, and area lighting.03-11-2010
20130043501LED MODULE - An LED module A02-21-2013
20090194783LIGHT EMITTING ELEMENT, PRODUCTION METHOD THEREOF, BACKLIGHT UNIT HAVING THE LIGHT EMITTING ELEMENT, AND PRODUCTION METHOD THEREOF - A light emitting element includes: A light emitting element, includes: at least one LED chip provided on an installation surface of a substrate; a metallic reflecting plate, provided upright in a light projecting direction of the LED chip on the installation surface so as to surround an entire periphery of the LED chip, the metallic reflecting plate reflecting light projected from the LED chip to guide the light to a light projecting surface provided in the light projecting direction; and a first metallic portion and a second metallic portion, respectively connected to the LED chip as electrode terminals for supplying a driving current to the LED chip, each being formed in an area surrounded by the metallic reflecting plate on the installation surface, wherein an insulating section is formed surrounding the second metallic portion, to electrically insulate the second metallic portion from other portion in the area, and the first metallic portion is formed outside the insulating section in the area as an installation surface metallic reflecting film so as to be in contact with the metallic reflecting plate.08-06-2009
20090194782SEMICONDUCTOR LIGHT EMITTING DEVICE - A silver-plated metal member region on which a light emitting element is disposed, an extraction electrode having a copper plate pattern, and a convex resin portion separating the metal member region into a plurality of sections are provided on the bottom surface of a concave portion in a package of a semiconductor light emitting device. A covering resin is partially formed on the metal member region and a sealing resin is placed to cover the metal member region, the covering resin and the convex resin portion. According to this configuration, the area of contact is decreased between the sealing resin and the metal member region having the light emitting element placed thereon, to thereby prevent the light emitting element from falling off and being displaced from the metal member region, with the result that a semiconductor light emitting device of high reliability can be provided.08-06-2009
20090194781WAVELENGTH CONVERSION MEMBER, LIGHT-EMITTING DEVICE AND PHOSPHOR - A wavelength conversion member provided with a composite phosphor obtained by coating surfaces of phosphor particles with coating material particles and has an average particle diameter of the coating material of not more than 1/10 of an average particle diameter of the phosphor particles, and a light emitting device using the same. It is possible to control dispersibility of the phosphor particles in the wavelength conversion member, and it is possible to provide a light emitting device free from color variability and having good light emission efficiency by combining the wavelength conversion member with a semiconductor light emitting element.08-06-2009
20090194780Organic light emitting diode display device and method of fabricating the same - An organic light emitting diode (OLED) display device and a method of fabricating the same are provided. When an organic layer having an emission layer (EML) is formed using a deposition mask, damage to a pixel defining layer due to inconsistencies or unevenness of the deposition mask is prevented or reduced using spherical spacers disposed on the pixel defining layer. A plurality of spherical spacers are applied on the pixel defining layer prior to forming an opening in the pixel defining layer exposing the first electrode. An organic layer having an emission layer (EML) is formed on the first electrode at the opening by using a deposition mask. The spherical spacers prevent or reduce damage to the pixel defining layer caused by inconsistencies or unevenness in the deposition mask by maintaining a spacing between the pixel defining layer and the deposition mask.08-06-2009
20090194779LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - A light emitting diode includes a current leakage passage electrically connected in parallel to an active layer to better protect the light emitting diode from static electricity. The light emitting diode includes a substrate, an n-type nitride semiconductor layer on the substrate, an active layer on the n-type nitride semiconductor layer, a p-type semiconductor layer on the active layer, a p-electrode on the p-type semiconductor layer, and an n-electrode formed from the n-type semiconductor layer, exposed by etching, to a portion of the p-type semiconductor layer.08-06-2009
20090194778LIGHT EMITTING DIODE - A light emitting diode (08-06-2009
20090194777OPTOELECTRONIC DEVICE SUBMOUNT - A submount for an optoelectronic device includes a substrate, a first top pad on a top surface of the substrate, a first bottom pad on a bottom surface of the substrate and a first wrap-around contact in a sidewall recess of the substrate, in which the first wrap-around contact is coupled electrically to the first top pad and to the first bottom pad. Alternatively, or in addition, the submount includes a device mounting pad on the top surface of the substrate, a wire-bond pad on the top surface of the substrate, a contact pad on the bottom surface of the substrate and a feedthrough contact which extends through the substrate and electrically couples the wire-bond pad to the contact pad.08-06-2009
20100051999LIQUID-CRYSTALLINE POLYESTER RESIN MIXTURE, AND REFLECTING PLATE AND LIGHT-EMITTING DEVICE USING THE SAME - The present inventions provides a liquid-crystalline polyester resin mixture comprising a liquid-crystalline polyester, a particulate titanium oxide and at least one compound selected from the group consisting of a fatty acid amide and a fatty acid metal salt, wherein the resin mixture contains the particulate titanium oxide in an amount of 40 to 80 parts by weight and the at least one compound in an amount of 0.005 to parts by weight, both the amounts being based on 100 parts by weight of the component (A) in the resin mixture.03-04-2010
20100051990Electroluminescence Device - An organic EL element has excellent features as compared with other electroluminescent elements, but on the other hand, has a problem that the life of the element is not sufficiently long. In addition, since the organic EL element is expected to be applied to a mobile display and the like, it is also important to improve power efficiency. Hence, an object of the invention is to provide an element structure to realize an improvement in power efficiency and an improvement in the life of the element at the same. In the construction of an organic EL element of the invention, the first electroluminescent film 03-04-2010
20120168806Optical Semiconductor Device having Pre-Molded Leadframe with Window and Method Therefor - A semiconductor device is made by providing a semiconductor die having an optically active area, providing a leadframe or pre-molded laminated substrate having a plurality of contact pads and a light transmitting material disposed between the contact pads, attaching the semiconductor die to the leadframe so that the optically active area is aligned with the light transmitting material to provide a light transmission path to the optically active area, and disposing an underfill material between the semiconductor die and leadframe. The light transmitting material includes an elevated area to prevent the underfill material from blocking the light transmission path. The elevated area includes a dam surrounding the light transmission path, an adhesive ring, or the light transmission path itself can be the elevated area. An adhesive ring can be disposed on the dam. A filler material can be disposed between the light transmitting material and contact pads.07-05-2012
20120168797LIGHT EMITTING DIODE CHIP AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a light emitting diode chip, comprising steps: providing a substrate with a first patterned blocking layer formed thereon; growing a first n-type semiconductor layer on the substrate between the constituting parts of first patterned blocking layer, and stopping the growth of the first n-type semiconductor layer before the first n-type semiconductor layer completely covers the first patterned blocking layer; removing the first patterned blocking layer, whereby a plurality of first holes are formed at position where the first patterned blocking layer is originally existed; continuing the growth of the first n-type semiconductor layer until the first holes are completely covered by the first n-type semiconductor layer; and forming an active layer and a p-type current blocking layer on the first n-type semiconductor layer successively.07-05-2012
20120168796Light emitting diode display - An organic light emitting diode (OLED) display includes a substrate, a pixel electrode on the substrate, an organic light emitting member on the pixel electrode, a common electrode on the organic light emitting member, a thin film encapsulation member covering the common electrode, a black matrix on the thin film encapsulation member, and an upper protection film on the black matrix. The black matrix has a color filter at a location corresponding to the organic light emitting member. A sum of a thickness of the color filter and a distance between the color filter and the organic light emitting member is smaller than a width of the organic light emitting member.07-05-2012
20100140639OPTICAL SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING OPTICAL SEMICONDUCTOR DEVICE - An optical semiconductor device includes a light emitting element having a first surface and a second surface, the first surface having a first electrode provided thereon, the second surface being located on the opposite side from the first surface and having a second electrode provided thereon; a first conductive member connected to the first surface; a second conductive member connected to the second surface; a first external electrode connected to the first conductive member; a second external electrode connected to the second conductive member; and an enclosure sealing the light emitting element, the first conductive member, and the second conductive member between the first external electrode and the second external electrode, and being configured to transmit light emitted from the light emitting element.06-10-2010
20100140641SEMICONDUCTOR LIGHT EMITTING APPARATUS INCLUDING SEMICONDUCTOR LIGHT EMITTING DEVICE, RED PHOSPHOR AND GREEN PHOSPHOR, AND IMAGE DISPLAY USING THE SEMICONDUCTOR LIGHT EMITTING APPARATUS - A semiconductor light emitting apparatus including a semiconductor light emitting device, a green phosphor emitting green light and a red phosphor emitting red light is provided. The green phosphor is a rare earth activated inorganic phosphor, and the red phosphor is a semiconductor particle phosphor. The minimum among respective differences between respective wavelengths at local minima of an absorption spectrum of the red phosphor and the peak wavelength of an emission spectrum of the green phosphor is not more than 25 nm. An image display including the semiconductor light emitting apparatus is also provided.06-10-2010
20130134468OPTICAL SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME - In an optical semiconductor package, a method of manufacturing the same, and an optical semiconductor device according to the present invention, a thermosetting resin such as an unsaturated polyester resin is used for a reflector 05-30-2013
20130134464LIGHT EMITTING DIODE DEVICE AND FLIP-CHIP PACKAGED LIGHT EMITTING DIODE DEVICE - The present invention relates to a light emitting diode (LED) and a flip-chip packaged LED device. The present invention provides an LED device. The LED device is flipped on and connected electrically with a packaging substrate and thus forming the flip-chip packaged LED device. The LED device mainly has an Ohmic-contact layer and a planarized buffer layer between a second-type doping layer and a reflection layer. The Ohmic-contact layer improves the Ohmic-contact characteristics between the second-type doping layer and the reflection layer without affecting the light emitting efficiency of the LED device and the flip-chip packaged LED device. The planarized buffer layer id disposed between the Ohmic-contact layer and the reflection layer for smoothening the Ohmic-contact layer and hence enabling the reflection layer to adhere to the planarized buffer layer smoothly. Thereby, the reflection layer can have the effect of mirror reflection and the scattering phenomenon on the reflected light can be reduced as well.05-30-2013
20130134463LED PACKAGE AND LIGHT EMITTING DEVICE HAVING THE SAME - An exemplary LED package includes first and second electrodes, an LED die and an encapsulation. An inner wall of each first and second electrode includes a first oblique plane. The LED die is surrounded by and electrically connected to the first and second electrodes. The LED die includes an outputting surface. The encapsulation is filled between the first electrode ant the second electrode and covers the LED die, and includes opposite first and second outer surfaces, wherein the second outer surface acts as an outputting surface of the LED package. A reflective layer is coated on the first outer surface of the encapsulation. The first oblique plane of the electrode structure is light reflective and extends aslant from the outputting surface of the LED die towards the outputting surface of the LED package along a direction away from the LED die.05-30-2013
20130043500LIGHT EMITTING DEVICE - A light emitting device includes: a semiconductor multilayer film formed on a principal surface of a substrate, and including an active layer configured to generate light at a first wavelength; and a fluorescent material layer formed on the semiconductor multilayer film, and forming a first two-dimensional periodic structure. The fluorescent material layer generates light at a second wavelength by being excited by the first wavelength light, the semiconductor multilayer film has an optical waveguide through which the first wavelength light and the second wavelength light are guided, and the light radiated from an end face of the optical waveguide includes a higher proportion of light having an electric field oriented in a direction horizontal to the principal surface than a proportion of light having an electric field oriented in a direction perpendicular to the principal surface.02-21-2013
20110186896POWER SURFACE MOUNT LIGHT EMITTING DIE PACKAGE - A light emitting die package includes a substrate, a reflector plate, and a lens. The substrate has traces for connecting an external electrical power source to a light emitting diode (LED) at a mounting pad. The reflector plate is coupled to the substrate and substantially surrounds the mounting pad, and includes a reflective surface to direct light from the LED in a desired direction. The lens is free to move relative to the reflector plate and is capable of being raised or lowered by the encapsulant that wets and adheres to it and is placed at an optimal distance from the LED chip(s). Heat generated by the LED during operation is drawn away from the LED by both the substrate (acting as a bottom heat sink) and the reflector plate (acting as a top heat sink).08-04-2011
20110186894LIGHT EMITTING DEVICE PACKAGE - Disclosed are a light emitting device package and a lighting system. The light emitting device package includes a sub-mount including a cavity, a light emitting device chip provided in the cavity, an electrode electrically connected to the light emitting chip, a reflective layer formed on a surface of the cavity, a dielectric pattern on the reflective layer, and an encapsulant filled in the cavity.08-04-2011
20110186890Electro-optical Organic Component - The invention relates to an electro-optic organic component, in particular an organic light-emitting diode, with a layered assembly (08-04-2011
20100084674OLED with Color Conversion - An OLED is thus specified which includes a layer construction comprising at least an anode, a cathode and a functional layer arranged in between, the layer construction being arranged on a substrate. At least one electrode, selected from the anode and cathode, is transmissive to the light emitted by the functional layer and is arranged on the light-emitting side, emission side, of the layer construction. The at least one color conversion layer has quantum dots and is arranged on the emission side above or below the layer construction.04-08-2010
20080258165Light emitting diode chip - A substrate-free LED chip has a multilayer semiconductor structure at least 10 microns thick provided on a growth substrate. One or more arrays of parallel streets are etched into the multilayer semiconductor structure using a first pulsed laser beam. By scanning a second pulsed laser beam through the growth substrate to the multilayer semiconductor structure, the LED chips are detached from the growth substrate while simultaneously forming surface features on the chips.10-23-2008
20080258164Light Emitting Device - Light emitting device 10-23-2008
20080258162PACKAGE FOR A HIGH-POWER LIGHT EMITTING DIODE - A package for a high-power light emitting diode (LED) has a packaging substrate, at least one LED chip, at least one pair of conductive wires and an encapsulant. The packaging substrate has a reflective base with a recess, a dissipating board and at least one pair of electrodes. The electrodes and dissipating board are mounted in the reflective base and have upper surfaces. The LED chip is adhered to the dissipating board. The conductive wires connects electrodes of the LED chip and the electrodes. The encapsulant is transparent and fills the recess of the reflective base. Most heat from the LED chip is conducted via the dissipating board, thereby improving thermal conduction efficiency and allowing more powerful or numerous LED chips in the package. Therefore, the package provides different pass ways for conducting heat and electricity to improve heat conduction of the LED.10-23-2008
20080258161Transparent ohmic Contacts on Light Emitting Diodes with Carrier Substrates - A light emitting diode is disclosed that includes an active structure formed of at least p-type and n-type epitaxial layers of Group III nitride on a conductive carrier substrate. A conductive bonding system joins the active structure to the conductive carrier substrate. A first transparent ohmic contact is on the active structure adjacent the conductive carrier substrate, a second transparent ohmic contact is on the active structure opposite the conductive carrier substrate, and a third ohmic contact is on the conductive carrier substrate opposite from the active structure.10-23-2008
20110193125ADHESION METHOD, ADHESION STRUCTURE, METHOD OF MANUFACTURING OPTICAL MODULE, AND OPTICAL MODULE - A first light-blocking member and a second light-blocking member are adhered to each other by forming a light-transmitting layer having a light-transmitting composition serving as a base material and a light-transmitting filler different in index of refraction from this light-transmitting composition on a front surface of the first light-blocking member. A liquid light curing adhesive is applied to a front surface of the light-transmitting layer. The second light-blocking member is arranged on the front surface of the light-transmitting layer to which the liquid light curing adhesive has been applied. The liquid light curing adhesive is cured by irradiating the light-transmitting layer with light having a prescribed wavelength laterally from a side of the light-transmitting layer so as to adhere the light-transmitting layer and the second light-blocking member to each other. By adhering light-blocking members to each other, an adhesion operation may easily and quickly be performed with sufficient adhesion strength.08-11-2011
20110193124Deposition Substrate and Method for Manufacturing Light-Emitting Device - The deposition substrate of the present invention includes a light-transmitting substrate having a first region and a second region. In the first region, a first heat-insulating layer transmitting light is provided over the light-transmitting substrate, a light absorption layer is provided over the first heat-insulating layer, and a first organic compound-containing layer is provided over the light absorption layer. In the second region, a reflective layer is provided over the light-transmitting substrate, a second heat-insulating layer is provided over the reflective layer, and a second organic compound-containing layer is provided over the second heat-insulating layer. The edge of the second heat-insulating layer is placed inside the edge of the reflective layer, and there is a space between the first heat-insulating layer and the second heat-insulating layer.08-11-2011
20110193122SEMICONDUCTOR SUBSTRATE AND LIGHT EMITTING DEVICE USING THE SAME - There are provided a semiconductor substrate configured to improve the light extraction efficiency of a light emitting device, and a light emitting device using the substrate. The light emitting device includes the substrate, a buffer layer, and a light emitting structure, and the buffer layer and the light emitting structure being sequentially stacked on the substrate. The substrate includes a plurality of lenses disposed on a top surface thereof, and the lenses have a horn shape and are configured such that the buffer layer grows both on the top surface of the substrate and lateral surfaces of the lenses.08-11-2011
20110193121LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE HAVING THE SAME - Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer, an electrode electrically connected to the first conductive semiconductor layer, a reflective layer under the second conductive semiconductor layer, a protective layer disposed around a lower surface of the second conductive semiconductor layer, and a buffer layer disposed on at least one of top and lower surfaces of the protective layer.08-11-2011
20110193120SEMICONDUCTOR LIGHT-EMITTING DEVICE - The device includes a support substrate, a reflective electrode on the support substrate; an AlGaInP-based semiconductor film including a light-emission layer and is provided on the reflective electrode, and a surface electrode provided on the semiconductor film. The surface electrode includes an ohmic electrode constituted by electrode pieces disposed on the semiconductor film in a distributed manner; the reflective electrode is constituted by a line electrode and dot electrodes provided on both sides of each of the electrode pieces, along the electrode pieces; the surface electrode and the reflective electrode are disposed so as to satisfy the following equations:08-11-2011
20110193119OPTOELECTRONIC DEVICE AND THE MANUFACTURING METHOD THEREOF - One aspect of the present disclosure provides an optoelectronic device comprising a substrate; a first window layer on the substrate, having a first sheet resistance, a first thickness, and a first impurity concentration; a second window layer having a second sheet resistance, a second thickness, and a second impurity concentration; and a semiconductor system between the first window layer and the second window layer; wherein the second window layer comprises a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance.08-11-2011
20110193117LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE HAVING THE SAME - Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, an electrode on the first conductive type semiconductor layer, a reflective layer under the second conductive type semiconductor layer, a protective layer at outer peripheral portions of a lower surface of the second conductive type semiconductor layer, and a light extraction structure including a compound semiconductor on the protective layer.08-11-2011
20110193116LIGHT EMITTING DEVICE - To improve light extraction efficiency of a light emitting device, the light emitting device includes: a first electrode; a second electrode provided on a light extraction side; an emission layer formed between the first electrode and the second electrode; a reflection surface located on the first electrode with respect to the emission layer; and a periodic structure at a node of interference generated by light emitted from the emission layer and light emitted from the emission layer to the reflection surface side and reflected on the reflection surface. The periodic structure is for diffracting light generated in the emission layer and guided in an in-plane direction of the light emitting device in a direction to the second electrode, and for extracting the light to the outside of the light emitting device.08-11-2011
20100148198LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - A method for manufacturing a light emitting device includes: forming a multilayer body including a light emitting layer so that a first surface thereof is adjacent to a first surface side of a translucent substrate; forming a dielectric film on a second surface side opposite to the first surface of the multilayer body, the dielectric film having a first and second openings on a p-side electrode and an n-side electrode provided on the second surface; forming a seed metal on the dielectric film and an exposed surface of the first and second openings; forming a p-side metal interconnect layer and an n-side metal interconnect layer on the seed metal; separating the seed metal into a p-side seed metal and an n-side seed metal by removing a part of the seed metal, which is provided between the p-side metal interconnect layer and the n-side metal interconnect layer; and forming a resin in a space from which the seed metal is removed.06-17-2010
20100148196LED LIGHTING FIXTURE - A light-emitting device held on a fixture body includes an LED chip, a heat transfer plate made of a thermally conductive material on which the LED chip is mounted, a wiring board having, on one side, patterned conductors, for supplying an electric power to the LED chip and formed with an aperture (exposure part) through which a LED chip mount surface of the heat transfer plate is exposed, an encapsulation part in which the LED chip is encapsulated on the one side of the wiring board, and a dome-shaped color-changing member made of a fluorescent material and an optically transparent material and placed on the one side of the wiring board. The light-emitting device is bonded to the fixture body with an insulating layer interposed therebetween, and the insulating layer has electrical insulating properties and is interposed between the heat transfer plate and the fixture body to thermally couple the same.06-17-2010
20130087820LIGHT EMITTING DIODE - A light emitting diode is provided. The light emitting diode includes a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode and a second electrode. The active layer is sandwiched between the first semiconductor layer and the second semiconductor layer, and a surface of the second semiconductor layer which is away from the active layer is a light extraction surface of the LED. The first electrode is electrically connected with the first semiconductor layer. The second electrode electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are formed on the light extraction surface of LED, the number of the three-dimensional nano-structures are aligned side by side, and a cross section of each three-dimensional nano-structure is M-shaped.04-11-2013
20130037846RED LIGHT EMITTING PHOSPHOR, METHOD FOR MANUFACTURING THE SAME AND LIGHT EMITTING APPARATUS EMPLOYING RED LIGHT EMITTING PHOSPHOR - The present invention relates to a divalent europium-activated nitride red light emitting phosphor substantially represented by a general formula: (MI02-14-2013
20130037845LEAD FRAME, AND LIGHT EMITTING DIODE MODULE HAVING THE SAME - A light emitting diode (LED) module includes a lead frame having a number (N) of conducting arms spaced apart from each other, where N≧3, and at least one LED die mounted on one of any two neighbor conducting arms. Any two neighbor conducting arms are electrically coupled each other.02-14-2013
20130037840EPOXY RESIN COMPOSITION FOR OPTICAL SEMICONDUCTOR DEVICE AND OPTICAL SEMICONDUCTOR DEVICE USING THE SAME - The present invention relates to an epoxy resin composition for an optical semiconductor device having an optical semiconductor element mounting region and having a reflector that surrounds at least a part of the region, the epoxy resin composition being an epoxy resin composition for forming the reflector, the epoxy resin composition including the following ingredients (A) to (E): (A) an epoxy resin; (B) a curing agent; (C) a white pigment; (D) an inorganic filler; and (E) a specific release agent.02-14-2013
20130037844Light-Emitting Device and Method for Manufacturing Same - A light-emitting device (02-14-2013
20130037843LIGHT EMITTING TRANSISTOR - A light emitting transistor of the present invention has a light emitting layer, both a source electrode and a drain electrode both of which are connected with the light emitting layer electrically, an insulation layer arranged on the light emitting layer, a gate electrode arranged on the insulation layer. The light emitting layer is made from an organic semiconductor material. The light emitting transistor has also a periodic structure and the gate electrode to which an AC voltage is applied. And the emission intensity can be high, and width of the emission spectrum can be reduced. In addition, it is easy to control the amplitude of the emitting light and the width of emission spectrum reproducibly.02-14-2013
20130037842LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE - A light emitting device (02-14-2013
20130037841SEMICONDUCTOR LIGHT EMITTING DEVICE - Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a substrate; a light emitting structure comprising a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer on the substrate; an electrode layer on the second conductive semiconductor layer; and an electrode on the electrode layer, wherein the substrate comprises a plurality of convex portions, wherein the electrode layer comprises a plurality of holes corresponding to a region of at least one of the plurality of convex portions of the substrate, wherein an insulating material is disposed in the plurality of holes on the light emitting structure.02-14-2013
20130037839SEMICONDUCTOR LIGHT EMITTING ELEMENT - A semiconductor light emitting element of the present invention includes a support substrate, a semiconductor film including a light emitting layer, a surface electrode provided on the surface on a light-extraction-surface side of the semiconductor film, and a light reflecting layer. The surface electrode includes first electrode pieces that form ohmic contact with the semiconductor film and a second electrode piece electrically connected to the first electrode pieces. The light reflecting layer includes a reflecting electrode, and the reflecting electrode includes third electrode pieces that form ohmic contact with the semiconductor film and a fourth electrode piece electrically connected to the third electrode pieces and placed opposite to the second electrode piece. Both the second electrode piece and the fourth electrode piece form Schottky contact with the semiconductor film so as to form barriers to prevent forward current in the semiconductor film.02-14-2013
20130037838Method and Apparatus for Coupling Light-Emitting Elements with Light-Converting Material - Light-emitting elements such as LEDs are associated with light-converting material such as phosphor and/or other material. A donor substrate comprising the light-converting and/or other material is suitably placed relative to a target substrate associated with the light-emitting elements. A laser or other energy source is then used to transfer the light-converting and/or other material in a pattern via writing or masking from the donor substrate to the target substrate in accordance with the pattern. Addressability and targetability of the transfer process facilitates precise patterning of the target substrate.02-14-2013
20130037837MINIATURE LEADLESS SURFACE MOUNT LAMP WITH DOME AND REFLECTOR CUP - A package for a light source is disclosed. In particular, a Plastic Leaded Chip Carrier (PLCC) is described which provides many features offered by traditional surface mount technology lamps, but also has a decreased height, increased light output, and enables a smaller viewing angle as compared to traditional surface mount technology lamps.02-14-2013
20100163912NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A nitride-based semiconductor light emitting device having an improved structure in which light extraction efficiency is improved and a method of manufacturing the same are provided. The nitride-based semiconductor light emitting device comprises an n-clad layer, an active layer, and a p-clad layer, which are sequentially stacked on a substrate, wherein the n-clad layer comprises a first clad layer, a second clad layer, and a light extraction layer interposed between the first clad layer and the second clad layer and composed of an array of a plurality of nano-posts, the light extraction layer diffracting or/and scattering light generated in the active layer.07-01-2010
20100163914LIGHT EMITTING DEVICE - A light emitting device, in which an encapsulation resin is disposed at a space confined between an optical member and a mounting substrate. This encapsulation resin is possibly made free from a void-generation therein. In this light emitting device, the optical member can be precisely positioned. An electrode disposed outside a color conversion member is possibly free from an improper solder connection. A ring gate is formed on the top surface of the mounting substrate outside of the optical member, and acts to position the color conversion member. The ring gate acts to prevent an overflowing liquid encapsulation resin from flowing to the electrode provided. The ring gate is provided with a plurality of centering projections which are spaced circumferentially along its inner circumference to position the color conversion member.07-01-2010
20100163910LIGHT EMITTING DIODE - An LED chip (07-01-2010
20100163903SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device is provided. The semiconductor light emitting device comprises a plurality of compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, and a layer of the plurality of compound semiconductor layers comprising a roughness comprising a sapphire material.07-01-2010
20100117110Photosensitive Quantum Dot, Composition Comprising the Same and Method of Forming Quantum Dot-Containing Pattern Using the Composition - A photosensitive quantum dot including a quantum dot, and a plurality of photosensitive moieties that are bound to a surface of the quantum dot, wherein each of the photosensitive moieties includes silicon (Si) and a photosensitive functional group. Also disclosed are a composition for forming a quantum dot-containing pattern, where the composition includes the photosensitive quantum dot, and a method of forming a quantum dot-containing pattern using the composition.05-13-2010
20100117108USES OF SELF-ORGANIZED NEEDLE-TYPE NANOSTRUCTURES - The invention relates to processes for the production and elements (components) with a nanostructure (05-13-2010
20100117109Light emitting element - A light emitting element includes a semiconductor stacked structure including a first semiconductor layer of first conductivity type, a second semiconductor layer of second conductivity type different from the first conductivity type and an active layer sandwiched between the first semiconductor layer and the second semiconductor layer. The light emitting element further includes a plurality of convex portions formed on one surface of the semiconductor stacked structure, and an embedded part for transmitting a light emitted from the active layer and reducing stress generated in the plurality of convex portions, the embedded part being formed between two adjacent convex portions of the plurality of convex portions.05-13-2010
20130026518WAFER LEVEL LED PACKAGE AND METHOD OF FABRICATING THE SAME - Disclosed are a wafer level LED package and a method of fabricating the same. The method of fabricating a wafer level LED package includes: forming a plurality of semiconductor stacks on a first substrate, each of the semiconductor stacks comprising a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active region disposed between the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer; preparing a second substrate comprising first lead electrodes and second lead electrodes arranged corresponding to the plurality of semiconductor stacks; bonding the plurality of semiconductor stacks to the second substrate; and cutting the first substrate and the second substrate into a plurality of packages after the bonding is completed. Accordingly, the wafer level LED package is provided.01-31-2013
20130026517ORGANIC LUMINANCE DEVICE, METHOD FOR MANUFACTURING SAME AND LIGHTING APPARATUS INCLUDING SAME - An organic luminance device includes a base substrate, a organic luminance multi-layered structure and a cover substrate. Furthermore, a protective film is used to wrap the light emitting surface and at least one lateral surface of the base substrate to prevent the substrate from crack. The protective film may be doped with one or more dopants having a refractive index different from original material of the protective film.01-31-2013
20100072503ELECTRO-OPTICAL DEVICE AND ELECTRONIC APPARATUS - An electro-optical device includes a semiconductor layer including a channel region having a channel length along one of a first direction and a second direction, a source region having a source length along the second direction and electrically connected to a data line, a drain region having a drain length including a portion along the first direction and electrically connected to a pixel electrode, and a junction region formed between the channel region and the drain region, and bent in the drain region in plan view; a gate electrode including a main body portion facing the channel region with a gate insulating film interposed therebetween and an enclosure portion including an L-shaped portion enclosing the junction region along the portion bent in the drain region; and a sidewall portion rising or falling from the enclosure portion and including a portion arranged along the side of the second junction region.03-25-2010
20100072501SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device which includes at least one concave on a light extraction surface opposite to a surface on which a semiconductor stack comprising a light emitting layer between a n-type semiconductor layer and a p-type semiconductor layer is mounted. The concave has not less than two slopes each having a different slope angle in a direction that a diameter of the concave becomes narrower toward a bottom of the concave from an opening of the concave and a slope having a gentle slope angle is provided with irregularities and a slope having a steep slope angle is a flat surface.03-25-2010
20100072500Thin-Film Light Emitting Diode Chip and Method for Producing a Thin-Film Light Emitting Diode Chip - A thin-film light-emitting diode chip with a layer stack having a first emission surface and an opposite second emission surface, so that the thin-film light-emitting diode chip has at least two main emission directions. Measures for improving the outcoupling of the light generated in the layer sequence are provided on both the first and the second main emission surface. A method is disclosed for manufacturing a thin-film light-emitting diode chip.03-25-2010
20100072499LED PACKAGE - The present invention has an object to provide a LED package having a means capable of precisely limiting a region in which a resin containing a phosphor is dotted on a member on which an LED chip is supported. To this end, an LED package according to the present invention comprises a package body having an inner space with an LED chip mounted therein, the inner space being open toward a light emission direction; a chip support member mounted to the inner space of the package body to support the LED chip; a phosphor resin member formed by dotting resin containing a phosphor onto the LED chip; and a region limitation means provided on the chip support member and defining a region in which the phosphor resin member is formed.03-25-2010
20100072498Lithium-containing sialon phosphor and method of manufactring the same - According to the invention, a highly crystalline α-sialon is synthesized to emit highly intense light and a white LED showing an excellent color rendering characteristic is provided by shifting emitted light to the short wavelength side (blue shift). Such an α-sialon is designed so as to be expressed by general formula (Li03-25-2010
20130075773LIGHT EMITTING DEVICE - An object of the present invention is to provide a light emitting device which increases the emission efficiency of phosphor by reducing self-absorption of light by phosphor and by reducing absorption of fluorescent light by an encapsulating resin, and which increases the efficiency of light extraction from the phosphor layer by preventing light scattering caused by the phosphor.03-28-2013
20130207150NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE - A nitride-based semiconductor light-emitting device of the present disclosure includes: a semiconductor multilayer structure which includes an active layer that is made of a nitride semiconductor, a principal surface of the nitride semiconductor being a semi-polar plane or a non-polar plane and which has recessed/elevated surfaces including at least either of recessed portions and elevated portions; an electrode covering a side of the semiconductor multilayer structure at which the recessed/elevated surfaces is provided, the electrode being configured to reflect at least part of light emitted from the active layer; and a birefringent substrate provided on a side of the semiconductor multilayer structure which is opposite to the recessed/elevated surfaces, the birefringent substrate being configured to transmit light emitted from the active layer and light reflected by the electrode.08-15-2013
20130032843LIGHT EMITTING DIODE PACKAGE AND MANUFACTURING METHOD THEREOF - A light emitting diode (LED) package and a manufacturing method thereof are provided. The LED package includes a substrate including a circuit layer, an LED mounted on the substrate, and a plurality of protruded reflection units disposed in a region excluding an LED mounting region on the substrate and configured to reflect light generated from the LED.02-07-2013
20130032844LIGHT EMITTING PACKAGE - The present invention discloses a light emitting package, comprising: a base; a light emitting device on the base; an electrical circuit layer electrically connected to the light emitting device; a gold layer on the electrical circuit layer; a wire electrically connected between the light emitting device and the gold layer; a screen member having an opening and disposed on the base adjacent to the light emitting device; and a lens covering the light emitting device, wherein a cross-sectional shape of the screen member is substantially rectangular, and a width of the cross-sectional shape of the screen member being larger than a height of the cross sectional shape of the screen member, wherein a bottom surface of the screen member is positioned higher than the light emitting device, and wherein an entire uppermost surface of the screen member is in contact with the lens.02-07-2013
20130032842LIGHT EMITTING DEVICE PACKAGE AND METHOD OF MANUFACTURING THE SAME - There are provided a light emitting device package and a method of manufacturing the same. The light emitting device package includes a body part including a through hole formed in a thickness direction; at least one light emitting device disposed within the through hole; and a wavelength conversion part filling the through hole and supporting the light emitting device.02-07-2013
20130032838SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device having a base, a mounting material and a chip of a semiconductor light emitting element is provided. The mounting material is provided on the base. The chip of the semiconductor light emitting element is fixed onto the base via the mounting material. The chip of the semiconductor light emitting element is provided with a sapphire substrate, an active region, a light shielding portion and anode and cathode electrodes for supplying an electric power to the active region. The active region is provided on the sapphire substrate and has a light emitting layer for emitting light by supplying electric power. The light shielding portion is formed on the sapphire substrate on the side of the mounting material. The light shielding portion prevents the mounting material from being irradiated with the light produced in the light emitting layer.02-07-2013
20130032841Light-Emitting Device and Lighting Device - A light-emitting device which has various emission colors and can be manufactured efficiently and easily is provided. A first conductive layer formed of a semi-transmissive and semi-reflective conductive film is provided in a first light-emitting element region, so that the intensity of light in a specific wavelength region is increased with a cavity effect. As a result, the light-emitting device as a whole can emit desired light. When the first conductive layer is formed using a material with low electric resistance, voltage drop in a transparent conductive layer in the light-emitting device can be prevented. Accordingly, a light-emitting device with less emission unevenness can be manufactured. By applying such a structure to a white-light-emitting device, desired white light emission or white light emission with an excellent color rendering property can be obtained. Further, a large-area lighting device including a white-light-emitting device with less emission unevenness can be provided.02-07-2013
20130032840ORGANIC LIGHT EMITTING DEVICES - Organic light emitting devices are provided. The organic light emitting device may include a substrate having a first refractive index, a first electrode on the substrate, a second electrode disposed between the substrate and the first electrode and having a thickness equal to or greater than one-hundredth of a minimum wavelength of visible light and equal to or smaller than five-hundredths of a maximum wavelength of the visible light, and an organic light emitting layer disposed between the first and second electrodes and having a second refractive index.02-07-2013
20130032839LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF - A manufacturing method for an LED with roughened lateral surfaces comprises following steps: providing an LED wafer with an electrically conductive layer disposed thereon; providing a photoresist layer on the electrically conductive layer; roughening a lateral surface of the electrically conductive layer by wet etching; forming a depression in the LED wafer by dry etching and roughening a sidewall of the LED wafer defining the depression; and disposing two pads respectively in the depression and the conducting layer. The disclosure also provides an LED with roughened lateral surfaces. A roughness of the roughened lateral surfaces is measurable in micrometers.02-07-2013
20130032837Fluorescent Coating and a Method for Making the Same - Disclosed is a fluorescent coating and a method for making the same. At first, fluorescent powder is mixed with an anti-electrostatic solution. The mixture is cleared of impurities before it is dried and sintered. Thus, the fluorescent powder is coated with the anti-electrostatic material. The fluorescent powder coated with the anti-electrostatic material is plated on a side of a light-emitting diode (“LED”) chip by electrophoresis, thus forming a mixing zone on the side of the LED chip. Hence, the mixing zone is not vulnerable to deterioration or itiolation when it is subjected to heat in use. Accordingly, the life of the LED chip is long, and the illumination of the LED chip is high.02-07-2013
20130075775Multicolored Light Converting LED With Minimal Absorption - Light emitting systems are disclosed. More particularly light emitting systems that utilize wavelength converting semiconductor layer stacks, and preferred amounts of potential well types in such stacks to achieve more optimal performance are disclosed03-28-2013
20130075772LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is a light-emitting device including (a) a layer structure obtained by sequentially growing on a base substrate a first compound semiconductor layer of a first conductivity type, (b) an active layer formed of a compound semiconductor, and (c) a second compound semiconductor layer of a second conductivity type; a second electrode formed on the second compound semiconductor layer; and a first electrode electrically connected to the first compound semiconductor layer. The layer structure formed of at least a part of the second compound semiconductor layer in a thickness direction of the second compound semiconductor layer. The first compound semiconductor layer has a thickness greater than 0.6 μm. A high-refractive index layer formed of a compound semiconductor material having a refractive index higher than a refractive index of a compound semiconductor material of the first compound semiconductor layer is formed in the first compound semiconductor layer.03-28-2013
20100032704LED WITH CURRENT CONFINEMENT STRUCTURE AND SURFACE ROUGHENING - An LED having a p-type layer of material with an associated p-contact, an n-type layer of material with an associated n-contact and an active region between the p-type layer and the n-type layer, includes a confinement structure that is formed within one of the p-type layer of material and the n-type layer of material. The confinement structure is generally aligned with the contact on the top and primary emission surface of the LED and substantially prevents the emission of light from the area of the active region that is coincident with the area of the confinement structure and the top-surface contact. The LED may include a roughened emitting-side surface to further enhance light extraction.02-11-2010
20100032703EDGE-EMITTING LED ASSEMBLY - A light-emitting diode (LED) in accordance with the invention includes an edge-emitting LED stack having an external emitting surface from which light is emitted, and a reflective element that is located adjacent to at least one external surface of the LED stack other than the external emitting surface. The reflective element receives light that is generated inside the LED stack and reflects the received light back into the LED stack. At least a portion of the reflected light is then emitted from the external emitting surface.02-11-2010
20130082295LIGHT-EMITTING ELEMENT INCLUDING LIGHT-EMITTING LAYER SANDWICHED BETWEEN TWO SEMICONDUCTOR LAYERS - A light-emitting element includes a sapphire substrate as a substrate, a light-emitting layer arranged on the substrate in a state of being sandwiched in a thickness direction between an n-type semiconductor layer and a p-type semiconductor layer as two semiconductor layers having conductivity types different from one another, and a transparent electrode layer arranged so as to overlap with p-type semiconductor layer as one of the two semiconductor layers located farther away from the substrate, and a flat layer of a transparent material having a higher refractive index than transparent electrode layer and provided so as to cover at least a part of an upper surface of transparent electrode layer, and a irregularity layer arranged on an upper side of said flat layer.04-04-2013
20090121249PACKAGE STRUCTURE OF A LIGHT EMITTING DIODE DEVICE AND METHOD OF FABRICATING THE SAME - A package structure for light emitting diode devices comprises a substrate having a reflective cavity, a die mounted inside the reflective cavity, a reflective layer disposed on the surface of the reflective cavity, a plurality of electrodes disposed under the surface of the substrate which is opposite to the reflective cavity, and a dual brightness enhancement film overlaid on the reflective cavity. The dual brightness enhancement film efficiently reflects the polarized light that is generated from the die and is not in a transparent direction back to the reflective layer. Subsequently, this light is reflected from the reflective layer to the dual brightness enhancement film. The portions of the reflected light propagating in the same direction as the transparent direction will transmit through the package structure.05-14-2009
20090121248SEMICONDUCTOR LIGHT EMITTING DEVICE AND PLANAR LIGHT SOURCE - A semiconductor light emitting device includes: a base portion having a concave portion formed in one of major surfaces thereof; and a light emitting element mounted on a bottom surface of the concave portion of the base portion. The base portion comprises a side wall portion that surrounds the light emitting element. The light emitting element is covered with a resin portion filled in the concave portion. At least a part of an upper surface of the resin portion is positioned closer to the bottom surface of the concave portion than an upper surface of the side wall portion.05-14-2009
20090121245Optoelectronic Semiconductor Chip - An optoelectronic semiconductor chip is disclosed which emits electromagnetic radiation from its front side (05-14-2009
20090121250HIGH LIGHT EXTRACTION EFFICIENCY LIGHT EMITTING DIODE (LED) USING GLASS PACKAGING - An (Al, Ga, In)N and ZnO direct wafer bonded light emitting diode (LED) combined with a shaped optical element in which the directional light from the ZnO cone or any high refractive index material in contact with the LED surface entering the shaped optical element is extracted to air.05-14-2009
20130082290LIGHT EMITTING DEVICES HAVING LIGHT COUPLING LAYERS WITH RECESSED ELECTRODES - A light emitting device comprises a first layer of an n-type semiconductor material, a second layer of a p-type semiconductor material, and an active layer between the first layer and the second layer. A light coupling structure is disposed adjacent to one of the first layer and the second layer. In some cases, the light coupling structure is disposed adjacent to the first layer. An orifice formed in the light coupling structure extends to the first layer. An electrode formed in the orifice is in electrical communication with the first layer.04-04-2013
20130075774Light Converting And Emitting Device With Minimal Edge Recombination - Light emitting system (03-28-2013
20130075776LIGHT DISTRIBUTION CONTROLLER, LIGHT-EMITTING DEVICE USING THE SAME, AND METHOD FOR FABRICATING LIGHT DISTRIBUTION CONTROLLER - A light distribution controller of a light-emitting device includes a first optical member formed of ZnO disposed over an LED interposing a transparent adhesive, and a second optical member which covers the first optical member. The first optical member includes a first concave portion having an opening in a regular hexagon shape whose area gradually increases. In the first concave portion, inner wall surfaces having inclined surfaces, each of whose bases is formed by one side of the hexagon of the opening shape, are formed. Outside of the first optical member, outer wall surfaces each having a trapezoidal shape are formed. The second optical member includes a second concave portion arranged so that light at an annular peak in the light distribution characteristic of the light traveled through the first optical member is totally reflected.03-28-2013
20100044740SEMICONDUCTOR DEVICE - A semiconductor device with a substrate, a first electrode on the substrate, at least one of an injection layer or a transporting layer on the first electrode, an adhesion layer on the at least one of an injection layer or a transporting layer, and a second electrode on the adhesion layer.02-25-2010
20100044730Organic light emitting diode display device and method of fabricating the same - An organic light emitting diode display device having a frit which can improve mechanical strength and adhesion between the upper substrate and the lower substrate, and a method of fabricating the same are disclosed. The organic light emitting diode display device includes a lower substrate, an organic light emitting diode disposed on the lower substrate, an upper substrate to be coupled to the lower substrate, and a frit disposed between the lower substrate and the upper substrate to couple both the lower substrate and the upper substrate to each other where the frit has a plurality of pores.02-25-2010
20100044739Light-Radiating Semiconductor Component with a Luminescence Conversion Element - The light-radiating semiconductor component has a radiation-emitting semiconductor body and a luminescence conversion element. The semiconductor body emits radiation in the ultraviolet, blue and/or green spectral region and the luminescence conversion element converts a portion of the radiation into radiation of a longer wavelength. This makes it possible to produce light-emitting diodes which radiate polychromatic light, in particular white light, with only a single light-emitting semiconductor body. A particularly preferred luminescence conversion dye is YAG:Ce.02-25-2010
20100044738PREPARATION OF ORGANIC LIGHT EMITTING DIODES BY A VAPOUR DEPOSITION METHOD COMBINED WITH VACUUM LAMINATION - A method of fabricating an organic light emitting diode (OLED) is disclosed, which reduces the formation of physical defects in the GLED, comprising the removal of dust particles from a first and a second substrates (02-25-2010
20100044737SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device (A) includes a lead frame (02-25-2010
20100044736Semiconductor apparatus and method of manufacturing same - Disclosed is a semiconductor apparatus having a sealing structure that allows high-precision detection of defects occurring in a protective film, and a method of manufacturing the same. A semiconductor apparatus 02-25-2010
20100044735LIGHT-EMITTING DEVICE - A light-emitting device includes a substrate (02-25-2010
20100044734MANUFACTURING METHOD OF SEMICONDUCTOR LIGHT-EMITTING APPARATUS AND SEMICONDUCTOR LIGHT-EMITTING APPARATUS - A method includes forming a light-emission operating layer on a growth substrate; forming a reflection insulating layer on the light-emission operating layer; forming opening portions in the insulating layer; forming a contact portion which has a thickness adapted to flatten the opening portions and has been embedded into the opening portions; forming an electrode layer on the insulating layer and the contact portions; forming a first bonding metal layer on the electrode layer; preparing a supporting substrate in which a second bonding metal layer has been formed; and making the first and second bonding metal layers molten and joined.02-25-2010
20100044733ELECTROLUMINESCENCE ELEMENT - An electroluminescence element includes: an electroluminescence substrate including a thin film transistor substrate, and a light-emitting layer provided over the thin film transistor substrate and divided by picture-element separating portions so as to correspond to unit picture elements; and a sealing substrate arranged to hermetically seal the light-emitting layer of the electroluminescence substrate. At least one of the electroluminescence substrate and the sealing substrate is a flexible substrate. Spacers are provided between the electroluminescence substrate and the sealing substrate.02-25-2010
20100044732Light Emitting Diode Structure and Method of Forming the Same - A light emitting diode structure and a light emitting diode structure forming method are provided. The light emitting diode structure includes a base, a diode chip, and a package lens. The diode chip is mounted on the base. The package lens covers the diode chip. The surface of the package lens includes a plurality of dot structures. The steps of the method include mounting a light-emitting diode chip on a base, assembling a package lens to cover the light emitting diodes chip, and forming a plurality of dot structures on the surface of the package lens.02-25-2010
20100044731SEMICONDUCTOR LIGHT-EMITTING DEVICE - Such a semiconductor light-emitting device (02-25-2010
20100084673Light-emitting semiconductor packaging structure without wire bonding - A light-emitting semiconductor packaging structure without wire bonding, including a heat conduction board, a light-emitting semiconductor chip bonded on the heat conduction board and a lead frame positioned around the chip. The lead frame has at least one connection section extending to upper side of the chip to connect with a conductive protruding block adhered to an active surface of the chip. The conductive protruding block is bonded with the chip and the connection section of the lead frame by larger area so that the heat conduction area is increased to enhance heat dissipation effect for the chip. It is unnecessary to save upward and outward extension room for wire bonding so that the volume and thickness of the packaging structure are minified. The chip is received in a cavity of the lead frame to form a lightweight and miniaturized heat dissipation packaging structure.04-08-2010
20110169035SMALL SIZE LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME - There is provided a light emitting device including: a package body having first and second circumferential surfaces and a plurality of side surfaces formed therebetween, the package body defined into first and second level areas including the first and second circumferential surfaces, respectively; first and second external terminal blocks each having an electrical contact part; an LED chip disposed between the first and second external terminal blocks in the first level area and having an electrode surface where first and second electrodes are formed; and wires electrically connected to first and second electrodes of the LED chip to the electrical contact parts of the first and second external terminal blocks, respectively.07-14-2011
20090146167JACKETED LED ASSEMBLIES REMOVABLE FROM LAMP HUSKS AND LIGHT STRINGS CONTAINING SAME - A jacketed light emitting diode assembly is provided, which includes a light emitting diode, a lens body containing a semiconductor chip and a set of positive and negative contacts exiting said lens body from a base portion. An electrical wire set of first and second electrical wires are connected to the positive contact and the negative contact, respectively. An integrally molded plastic jacket is provided at the base portion of the lens body around said positive and negative contacts and connection points between the contacts and the wire set to provide a seal at the base portion and at the connection points against moisture and airborne contaminants, whereby a portion of the first and second electrical wires project from the jacket to define bendable contacts for providing an electrical connection with a lamp husk. An optional light transmissive cover may further be provided. A waterproof light string including one or more of the jacketed light emitting diode assemblies is also provided, as are related methods.06-11-2009
20100102351Semiconductor Light Emitting Device and Method of Manufacturing the Same - The present disclosure relates to a semiconductor light-emitting device and a method of manufacturing the same, and more particularly, to a III-nitride semiconductor light-emitting device which improves external quantum efficiency by forming an irregular portion on a surface of a semiconductor layer by a protrusion formed on a substrate, and a method of manufacturing the same.04-29-2010
20100102344LED DEVICE AND ILLUMINATING APPARATUS - White LED device 04-29-2010
20100102349SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light emitting device (A) includes a semiconductor light emitting element (04-29-2010
20100102348Lead frame unit, package structure and light emitting diode device having the same - A package structure is adapted for mounting at least one light emitting diode (LED) die. The package structure includes an insulating housing, and a lead frame unit including two spaced-apart conductive bodies. Each of the conductive bodies has opposite first and second conductive terminals spaced-apart from each other along an axial direction. The first conductive terminals extend into the insulating housing. The second conductive terminals are exposed outwardly of the insulating housing. Each of the conductive bodies further has two side edges spaced-apart from each other along a transverse direction perpendicular to the axial direction, and a concave-convex structure disposed at the side edges and surrounded by the insulating housing.04-29-2010
20100102347LIGHT-EMITTING DIODE - A light-emitting diode includes a substrate (04-29-2010
20100102339LIGHT EMITTING DIODE AND LED CHIP THEREOF - A light emitting diode includes a base, a first and second conductive members through the base and a light emitting diode chip on the base. The light emitting diode chip includes an upper surface, a bottom surface, a first sidewall and a second sidewall. The first sidewall and the second sidewall interconnect the upper surface and bottom surface. A first and second heat dissipating layers are respectively located on the first and second sidewalls. The first and second heat dissipating layers connect with the first and second conductive members, respectively. A bottom face of the chip electrically and thermally connects with the second conductive member. A gold wire electrically connects an electrode on a top face of the chip and the first heat dissipating layer.04-29-2010
20100096654LIGHT-EMITTING DISPLAY DEVICE - The light-emitting display device comprises first and second thin film transistors. The first thin film transistor includes a first gate electrode; a first oxide semiconductor film; and a first electrode and a second electrode which are electrically connected to the first oxide semiconductor film. The second thin film transistor includes a second gate electrode electrically connected to the second electrode; a second oxide semiconductor film; a third electrode; a light-emitting layer and a fourth electrode over the second oxide semiconductor film. A work function of the second oxide semiconductor film is higher than a work function of the fourth electrode.04-22-2010
20090159918SEMICONDUCTOR LIGHT EMITTING DEVICES AND SUBMOUNTS AND METHODS FOR FORMING THE SAME - A submount for a semiconductor light emitting device includes a semiconductor substrate having a cavity therein configured to receive the light emitting device. A first bond pad is positioned in the cavity to couple to a first node of a light emitting device received in the cavity. A second bond pad is positioned in the cavity to couple to a second node of a light emitting device positioned therein. Light emitting devices including a solid wavelength conversion member and methods for forming the same are also provided.06-25-2009
20090159917SEMICONDUCTOR LIGHT EMITTING DEVICE - Provided are a semiconductor light emitting device and a method for fabricating the same. The semiconductor light emitting device comprises a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer comprising a dual roughness structure on the active layer.06-25-2009
20090159916LIGHT SOURCE WITH REFLECTIVE PATTERN STRUCTURE - A light source includes a substrate and a light-emitting unit. The substrate has a pattern structure, which includes a plurality of concave-convex structures. The light-emitting unit is formed on the pattern structure, and has a backlight surface connected to the pattern structure and a light outputting surface disposed opposite the backlight surface. The pattern structure reflects light, which is outputted from the light-emitting unit in a direction toward the backlight surface, to the light outputting surface.06-25-2009
20090159914WHITE LIGHT EMITTING DIODE (WLED) AND PACKING METHOD THEREOF - A white light emitting diode (LED) and the packing method thereof are described. The white LED includes a supporting frame, a LED chip, glue for mixing phosphor powder, and phosphor powder, wherein the glue for mixing phosphor powder comprises a first set of compositions and a second set of compositions, the first set of compositions comprises polydimethyl-siloxane, and the second set of compositions comprises the copolymer having dimethyl-siloxane, methyl hydrogen siloxane and vinyl-siloxane wherein the copolymer has a weight percentage from about 94% to 99%, the dimethyl-siloxane has a weight percentage from about 84% to 90%, the methyl hydrogen siloxane has a weight percentage from about 4% to 9%, and the vinyl-siloxane has a weight percentage from about 2% to 7%.06-25-2009
20090159913LIGHT-EMITTING DIODE - An LED includes an LED chip having a first electrode and a second electrode, a first electrically conductive block and a second electrically conductive block insulated from the first electrically conductive block, a cavity defined in the first electrically conductive block configured for accommodating the LED chip, and a light pervious encapsulation covering the LED chip, the first electrically conductive block and the second electrically conductive block. The first electrically conductive block is electrically connected to the first electrode, and the second electrically conductive block is electrically connected to the second electrode.06-25-2009
20090159912HOUSING FOR A LUMINESCENCE DIODE COMPONENT - What is specified is a housing for a luminescence diode component comprising a housing cavity within which is arranged at least one chip mounting region for a luminescence diode chip and which has an output opening. In accordance with one embodiment, the housing has, at least at a vertical distance from the chip mounting region, inner walls which laterally bound the housing cavity and are at a maximum lateral distance of less than or equal to 500 μm from the chip mounting region. What is additionally specified is a housing in which the housing cavity has at least one partial region which is laterally covered by a housing material that laterally delimits the housing cavity. Moreover, a description is given of a luminescence diode component, in particular for a motor vehicle headlight.06-25-2009
20090159911LIGHT-EMITTING DIODE PACKAGE AND METHOD FOR FABRICATING THE SAME - An LED package (06-25-2009
20090159910LIGHT EMITTING DIODE STRUCTURE AND METHOD FOR FABRICATING THE SAME - The present invention discloses a light emitting diode structure and a method for fabricating the same. In the present invention, a substrate is placed in a solution to form a chemical reaction layer on carved regions; the carved region is selectively etched to form a plurality of concave zones and form a plurality of convex zones; a semiconductor layer structure is epitaxially grown on the element regions and carved regions of the substrate; the semiconductor layer structure on the element regions is fabricated into a LED element with a photolithographic process.06-25-2009
20110169028LIGHT EMITTING DEVICE CHIP, LIGHT EMITTING DEVICE PACKAGE - Disclosed are a light emitting device chip, a light emitting device package, and a lighting system. The light emitting device chip includes a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer interposed between the first and second conductive semiconductor layers; a transmittive layer on the light emitting structure; and a luminescence material layer on the transmittive layer, wherein the luminescence material layer includes a pattern, which does not expose the transmittive layer, partially exposes the transmittive layer or partially exposes the transmittive layer and the light emitting structure.07-14-2011
20100032702Light-Emitting Diode Housing Comprising Fluoropolymer - A light-emitting diode housing comprising fluoropolymer is disclosed. The light-emitting diode housing supports a light-emitting diode chip and reflects at least a portion of the light emitted from the light-emitting diode chip.02-11-2010
20130043499SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device (A) having a simple configuration whereby it is possible to easily and accurately confirm whether or not ultraviolet light is being emitted, the semiconductor light-emitting device comprising: a semiconductor light-emitting element (02-21-2013
20100109040CHIP COATED LIGHT EMITTING DIODE PACKAGE AND MANUFACTURING METHOD THEREOF - A chip coated LED package and a manufacturing method thereof. The chip coated LED package includes a light emitting chip composed of a chip die-attached on a submount and a resin layer uniformly covering an outer surface of the chip die. The chip coated LED package also includes an electrode part electrically connected by metal wires with at least one bump ball exposed through an upper surface of the resin layer. The chip coated LED package further includes a package body having the electrode part and the light emitting chip mounted thereon. The invention improves light efficiency by preventing difference in color temperature according to irradiation angles, increases a yield, miniaturizes the package, and accommodates mass production.05-06-2010
20100109036LIGHT EMITTING UNIT - A light emitting unit includes a substrate, a first reflecting element, a light-emitting diode (LED), and a second reflecting element. At least one part of the substrate is light permeable. The LED is disposed between the substrate and the first reflecting element, and the first and second reflecting elements are disposed on two opposite sides of the substrate, respectively.05-06-2010
20100109039LIGHT EMITTING DIODE PACKAGE - Provided is an LED package. It is easy to control luminance according to the luminance and an angle applicable. Since heat is efficiently emitted, the LED package is easily applicable to a high luminance LED. The manufacturing process is convenient and the cost is reduced. The LED package includes a substrate, an electrode, an LED, and a heatsink hole. The electrode is formed on the substrate. The LED is mounted in a side of the substrate and is electrically connected to the electrode. The heatsink hole is formed to pass through the substrate, for emitting out heat generated from the LED.05-06-2010
20100109037FLUORESCER SOLUTION, LIGHT-EMITTING DEVICE, AND METHOD FOR MANUFACTURING SAME - In a fluorescer solution, a plurality of types of fluorescent particles are contained in a resin liquid. Average particle sizes of these fluorescent particles decrease as densities of the types increase. In other words, average settling rates v05-06-2010
20100109035COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - The present invention provides a compound semiconductor light emitting device including: an Si—Al substrate; protection layers formed on top and bottom surfaces of the Si—Al substrate; and a p-type semiconductor layer, an active layer, and an n-type semiconductor layer which are sequentially stacked on the protection layer formed on the top surface of the Si—Al substrate, and a method for manufacturing the same.05-06-2010
20100109034LED WITH MOLDED BI-DIRECTIONAL OPTICS - A double-molded lens for an LED includes an outer lens molded around the periphery of an LED die and a collimating inner lens molded over the top surface of the LED die and partially defined by a central opening in the outer lens. The outer lens is formed using silicone having a relatively low index of refraction such as n=1.33-1.47, and the inner lens is formed of a higher index silicone, such as n=1.54-1.76, to cause TIR within the inner lens. Light not internally reflected by the inner lens is transmitted into the outer lens. The shape of the outer lens determines the side emission pattern of the light. The front and side emission patterns separately created by the two lenses may be tailored for a particular backlight or automotive application.05-06-2010
20100109033Cavity Glass for Light-Emissive Devices and a Method of Manufacturing the Same - A method of manufacturing a transparent encapsulating sheet for a light-emissive device, the method comprising the steps: forming a plurality of cavities in one side of a transparent sheet of material for receiving light-emissive structures therein, said forming step producing a frosted surface comprising micro cracks in the cavities; coating said frosted surface with a low viscosity material whereby the micro cracks in the frosted surface are filled with the low viscosity material in order to form the transparent encapsulating sheet.05-06-2010
20130134459Micro-Bead Blasting Process for Removing a Silicone Flash Layer - Using compression molding to form lenses over LED arrays on a metal core printed circuit board leaves a flash layer of silicone covering the contact pads that are later required to connect the arrays to power. A method for removing the flash layer involves blasting particles of sodium bicarbonate at the flash layer. A nozzle is positioned within thirty millimeters of the top surface of the flash layer. The stream of air that exits from the nozzle is directed towards the top surface at an angle between five and thirty degrees away from normal to the top surface. The particles of sodium bicarbonate are added to the stream of air and then collide into the top surface of the silicone flash layer until the flash layer laterally above the contact pads is removed. The edge of silicone around the cleaned contact pad thereafter contains a trace amount of sodium bicarbonate.05-30-2013
20130134460COATED COLOR-CONVERTING PARTICLES AND ASSOCIATED DEVICES, SYSTEMS, AND METHODS - Coated color-converting particles and associated devices, systems, and methods are disclosed herein. A coating of the coated color-converting particles can include, for example, a parylene, such as a fluorinated parylene. In particular embodiments, the coating can be configured to protect a color-converting material of a particle core of the coated color-converting particles from detrimental reactions. For example, the coating can prevent, slow, or otherwise inhibit detrimental reactions between the color-converting material and a matrix material or between the color-converting material and an environmental constituent that can diffuse through a matrix. In particular embodiments, the coated color-converting particles can be incorporated into a matrix to form a composite. The composite can be used, for example, with a radiation transducer. Methods associated with the coated color-converting particles can include, for example, separating coated color-converting particles having acceptable coatings from coated color-converting particles having unacceptable coatings using relative buoyancy.05-30-2013
20100320492RED EMITTING SIAION-BASED MATERIAL - The invention relates to a red emitting material of the composition a(M12-23-2010
20110309400NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE DEVICE - A nitride semiconductor device includes a first nitride semiconductor layer having a C-plane as a growth surface, and unevenness in an upper surface; and a second nitride semiconductor layer formed on the first nitride semiconductor layer to be in contact with the unevenness, and having p-type conductivity. The second nitride semiconductor layer located directly on a sidewall of the unevenness has a p-type carrier concentration of 1×1012-22-2011
20130026514LIGHT EMITTING DEVICE - The invention provides a light emitting device. A light emitting device includes a light emitting component capable of radiating a light. A first fluorescent layer is capable of radiating a first light of a first wavelength range while being excited by the light. A second fluorescent layer is capable of radiating a second light of a second wavelength range while being excited by the light. A first fluorescent layer is between the light emitting component and the second fluorescent layer, and the first wavelength range is longer than the second wavelength range.01-31-2013
20130026516LIGHT-EMITTING DIODE (LED) PACKAGE STRUCTURE AND PACKAGING METHOD THEREOF - A light-emitting diode (LED) package structure and a packaging method thereof are provided. The packaging method includes: forming first conductive layers on a silicon substrate, and forming a reflection cavity and electrode via holes from a top surface of the silicon substrate; forming a reflection layer on predetermined areas of a surface of the reflection cavity, and forming second conductive layers and metal layers on surfaces of the electrode via holes; and mounting a chip and forming an encapsulant, so as to fabricate the LED package structure. In the present invention, there is no need to perform at least two plating processes for connecting upper and lower conductive layers of the silicon substrate in the electrode via holes, and the problem of poor connection of the conductive layers in the electrode via holes can be avoided, thereby making the fabrication processes simplified and time-effective and also improving the overall production yield.01-31-2013
20130026515LED PACKAGE WITH A FRESNEL LENS - A LED package with a Fresnel lens includes a base, a LED chip, a surrounding body and a lens. The lens is a Fresnel lens which refracts the beam of light from the LED chip to one definite direction for spotlighting the emitting light in a certain orientation.01-31-2013
20130026513OLED ASSEMBLY AND LUMINAIRE WITH REMOVABLE DIFFUSER - An OLED assembly comprises a base and a planar OLED device mounted on the base. A planar light diffuser sheet is removably attached relative to the base and OLED device. A releasable attachment mechanism is operably configured between the light diffuser sheet and the base. The light diffuser sheet is oriented relative to the OLED device so as to provide a selected diffusive property to light emitted from the OLED device. The light diffuser sheet is removable from the base upon release of the attachment mechanism and can be substituted with a different light diffuser sheet. A luminaire may incorporate the OLED assembly, wherein the luminaire has fixture in which the OLED assembly is received.01-31-2013
20090152582LIGHT EMITTING DIODE - A light emitting diode includes a reflective cup, an LED chip, and many electrodes, a first light scattering layer, and a phosphor layer. The reflective cup includes a bottom and a sidewall extending from the bottom. The LED chip is received in the reflective cup and mounted on the bottom thereof for emitting first light of a first wavelength. The electrodes each has a first end electrically connected to the LED chip and an opposite second end exposed at an outer surface of the reflective cup. The first light scattering layer formed in the reflective cup on the bottom thereof and covering the LED chip, which has a concave surface at an opposite side thereof to the LED chip. The phosphor layer formed on the concave surface of the light scattering layer for converting part of the first light into second light of a second wavelength.06-18-2009
20090134418METHOD FOR FORMING OHMIC ELECTRODE AND SEMICONDUCTOR LIGHT EMITTING ELEMENT - The present invention relates to a method of forming an ohmic electrode in a semiconductor light emitting element, comprising: forming a semiconductor layer having a light emitting structure on a substrate, sequentially laminating a bonding layer, a reflective layer and a protective layer on the semiconductor layer, and forming an ohmic electrode by performing a heat treatment process to form ohmic bonding between the semiconductor layer and the bonding layer and to form an oxide film on at least a portion of the protective layer; and a semiconductor light emitting element using the ohmic electrode. According to the present invention, since a reflective layer is formed of Ag, Al and an alloy thereof with excellent light reflectivity, the light availability is enhanced. Further, since contact resistance between a semiconductor layer and a bonding layer is small, it is easy to apply large current for high power.05-28-2009
20100006880Led chip package structure using sedimentation and method for making the same - An LED chip package structure using sedimentation includes a package body, at least two conductive substrates, at least one light-emitting element, and a package unit. The package body has a receiving space. The two conductive substrates are received in the receiving space. The light-emitting element is received in the receiving space and electrically connected to the two conductive substrates. The package unit has a package colloid layer and a powder mixed into the package colloid layer, and the package unit is filled into the receiving space. The powder is uniformly deposited in the receiving space by maintaining the package unit at room temperature firstly and the powder is solidified in the receiving space by heating to a predetermined temperature.01-14-2010
20130082296LED Device with Embedded Top Electrode - An LED device and a method of manufacturing, including an embedded top electrode, are presented. The LED device includes an LED structure and a top electrode. The LED structure includes layers disposed on a substrate, including an active light-emitting region. A top layer of the LED structure is a top contact layer. The top electrode is embedded into the top contact layer, wherein the top electrode electrically contacts the top contact layer.04-04-2013
20130082297ULTRAVIOLET SEMICONDUCTOR LIGHT-EMITTING ELEMENT - An ultraviolet semiconductor light-emitting element comprises a light-emitting layer which is arranged between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer, an n-electrode that is in contact with the n-type nitride semiconductor layer, and a p-electrode that is in contact with the p-type nitride semiconductor layer. The p-type nitride semiconductor layer is provided with a p-type contact layer that has a band gap smaller than that of the light-emitting layer and is in ohmic contact with the p-electrode. A depressed part is formed in a reverse side surface of a surface of the p-type nitride semiconductor layer that faces the light-emitting layer so as to avoid a formation region on which the p-electrode is formed. A reflective film that reflects ultraviolet light emitted from the light-emitting layer is formed on an inner bottom surface of the depressed part.04-04-2013
20130082292Light Emitting Diode Packaging Structure and Method of Fabricating the Same - A method of fabricating alight emitting diode packaging structure provides a metallized ceramic heat dissipation substrate and a reflector layer, and the metallized ceramic heat dissipation substrate is bonded with the reflector layer through an adhesive. The reflector layer has an opening for a surface of the metallized ceramic heat dissipation substrate to be exposed therefrom. The reflector layer may be formed with ceramic or polymer plastic material, to enhance the refractory property and the reliability of the package structure. In addition, the packaging structure of the present invention may make use of existing packaging machine for subsequent electronic component packaging, without increasing the fabrication cost.04-04-2013
20130082291Light Emitting Devices with Low Packaging Factor - A light emitting diode that when encapsulated within an overmolded hemispherical lens has a packaging factor less than 1.2.04-04-2013
20130082294SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME - According to one embodiment, a light-emitting unit which emits light, a wavelength conversion unit which includes a phosphor and which is provided on a main surface of the light-emitting unit, and a transparent resin which is provided on top of the wavelength conversion unit, are prepared. The transparent resin has a greater modulus of elasticity and/or a higher Shore hardness than the wavelength conversion unit.04-04-2013
20130082293LED PACKAGE DEVICE - An LED package device comprises a substrate, an LED chip, a reflector and a covering layer. The covering layer completely encapsulates the reflector, the LED chip and the substrate to enhance the robustness and unitary integrity of the LED package device; two electrodes comprising two bulges penetrate through the covering layer to reach a base of the LED package device. The LED package device is able to function as a side emitting type of LED package. Front sides of the two bulges are level with a front side of the LED package device and configured for being mounted to a printed circuit board and electrically connecting therewith.04-04-2013
20110186891SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE - A plurality of reflective nanometer-structures formed on the reflective surface of a semiconductor light emitting device package increases light emitting efficiency. Every pitch between each reflective nanometer-structure has an interval P shorter than the half wavelength of the visible light. Moreover, each of the plurality of reflective nanometer-structures has a depth H, wherein the ratio of the depth H over the interval P is not less than 2.08-04-2011
20120211790OPTICAL DEVICE FOR SEMICONDUCTOR BASED LAMP - An optical device for a semiconductor based lamp includes a base and a semiconductor based light-emitting device mounted on the base. A transparent body encapsulates the semiconductor based light-emitting device. A reflective surface is in contact with the transparent body and covers a predetermined region on a top of the transparent body. The reflective surface has an opening. At least a portion of the transparent body protrudes through the opening in the reflective surface. Light emitted from the semiconductor based light-emitting device transmits upwardly through the opening in the reflective surface.08-23-2012
20100065869Light emitting device and method for fabricating the same - A light emitting device includes a semiconductor multilayer structure having a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and an active layer. A reflecting layer is provided at a side of one surface of the semiconductor multilayer structure and reflects a light emitted from the active layer. A supporting substrate of Si or Ge is provided at an opposite side of the reflecting layer with respect to the side of the semiconductor multilayer structure and supports the semiconductor multilayer structure via a metal bonding layer. A back surface electrode is provided at an opposite side of the supporting substrate with respect to a side of the metal bonding layer and includes Au alloyed with the support substrate. A hardness of the back surface electrode is higher than a hardness of the Au.03-18-2010
20100065868SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device including: a substrate; an electrode layer; and a semiconductor multilayer film disposed between the substrate and the electrode layer, the semiconductor multilayer film including: an n-type semiconductor layer; a p-type semiconductor layer; and an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer, wherein the semiconductor multilayer film has a light extraction surface from which a light emitted in the semiconductor multilayer film is extracted, the light extraction surface being formed with a relief structure having nano-scaled convex portions, wherein the relief structure is formed to have variation in equivalent circular diameters of the convex portions, and wherein 90% or more of the convex portions in the relief structure are configured to have circularity coefficient of (4π×(area)/(circumferential length)03-18-2010
20080258160Led Device Comprising Thin-Film Phosphor Having Two Dimensional Nano Periodic Structures - Disclosed herein is an LED device which comprises a light-emitting diode (LED) and a laminate formed on the LED, the laminate consisting of a substrate and a phosphor thin film laminated on the substrate, wherein the phosphor thin film has a two-dimensional nanoperiodic structure formed in a forward direction of the thin film and has an extinction coefficient of 10″3 or less. The LED device has higher luminescent efficiency and luminance than conventional LED devices. In addition, since the LED device uses no slurry and a lesser amount of phosphor than conventional LED devices, it is advantageous in terms of optical homogeneity and reduced costs.10-23-2008
20130087822LIGHT EMITTING DIODE PACKAGE AND FABRICATION METHOD THEREOF - There is provided a light emitting diode (LED) package including: a package main body; an LED chip mounted on the package main body; and a hydrophobic pattern formed on the package main body spaced apart from the LED chip; and a resin unit encapsulating the LED chip and the resin unit is defined by the hydrophobic pattern. The LED package and a fabrication thereof which incur less production costs and have various patterns and enhanced intensity of illumination can be provided.04-11-2013
20130087821PHOSPHOR-CONVERTED SINGLE-COLOR LED INCLUDING A LONG-WAVELENGTH PASS FILTER - A phosphor-converted single-color LED is provided. The phosphor-converted single-color LED includes a long-wavelength pass filter having a special construction. The phosphor-converted single-color LED has high color purity and efficiency despite the use of a phosphor in the form of a nano/micro powder.04-11-2013
20130087823LIGHT EMITTING DIODE CHIP, LIGHT EMITTING DIODE PACKAGE STRUCTURE, AND METHOD FOR FORMING THE SAME - A light emitting diode chip, a light emitting diode package structure and a method for forming the same are provided. The light emitting diode chip includes a bonding layer, which has a plurality of voids, or a minimum horizontal distance between a surrounding boundary of the light emitting diode chip and the bonding layer is larger than 0. The light emitting diode chip, the light emitting diode package structure and the method may improve the product yields and enhance the light emitting efficiency.04-11-2013
20130087819LIGHT EMITTING DIODE - A light emitting diode is provided. The light emitting diode includes a first semiconductor layer, an active layer and a second semiconductor layer. The active layer is sandwiched between the first semiconductor layer and the second semiconductor layer, and a surface of the second semiconductor layer which is away from the active layer is a light emitting surface. A first electrode is electrically connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are formed on the light emitting surface. The number of the three-dimensional nano-structure are aligned side by side, and a cross-section of thee three-dimensional nano-structure is M-shaped.04-11-2013
20130087818LIGHT EMITTING DIODE - A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The substrate includes a first surface and a second surface, and the second surface is a light emitting surface of the LED. The first semiconductor layer, the active layer, and the second semiconductor layer are stacked on the first surface in that order. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on at least one surface of the substrate and aligned side by side, and a cross section of each of the three-dimensional nano-structure is M-shaped.04-11-2013
20120181567LED LIGHTING DEVICE - In an LED lighting device of the present invention, the reflecting surface of the light guide body is formed of division lines and a connection line connecting between the division lines. Each division line divides a cross section line of a virtual reflecting surface crossing projection lines. Each projection line is radially drawn at a selected angle from a selected point of a given distance away from a center point of the LED element toward the cross section line of the virtual reflecting surface of the light guide body. Each division line is adjusted by similar amplification or similar contraction so as to be contained within the thickness line with its length large enough to receive all the incoming light.07-19-2012
20120181566YELLOW LIGHT AFTERGLOW MATERIAL AND PREPARATION METHOD THEREOF AS WELL AS LED ILLUMINATING DEVICE USING SAME - The invention relates to a yellow light afterglow material and a preparation method thereof as well as an LED illuminating device using the same. The yellow light afterglow material comprises the chemical formula of aY07-19-2012
20120181565LED WITH REMOTE PHOSPHOR LAYER AND REFLECTIVE SUBMOUNT - A light emitting device comprises a flip-chip light emitting diode (LED) die mounted on a submount. The top surface of the submount has a reflective layer. Over the LED die is molded a hemispherical first transparent layer. A low index of refraction layer is then provided over the first transparent layer to provide TIR of phosphor light. A hemispherical phosphor layer is then provided over the low index layer. A lens is then molded over the phosphor layer. The reflection achieved by the reflective submount layer, combined with the TIR at the interface of the high index phosphor layer and the underlying low index layer, greatly improves the efficiency of the lamp. Other material may be used. The low index layer may be an air gap or a molded layer. Instead of a low index layer, a distributed Bragg reflector may be sputtered over the first transparent layer.07-19-2012
20120181564Phosphor Coating Method for Fabricating Light Emitting Semiconductor Device and Applications Thereof - In one aspect, a light emitting unit comprises: a first semiconductor layer having a first electric property; a second semiconductor layer having a second electric property disposed over the first semiconductor layer; an active layer disposed between the first semiconductor layer and the second semiconductor layer; a first electrode disposed on the second semiconductor layer; a second electrode disposed under the first semiconductor layer; and a phosphor layer disposed on the first semiconductor layer. The phosphor layer covers the active layer and the second semiconductor layer. The first electrode is exposed out of the phosphor layer.07-19-2012
20120181563LIGHT-EMITTING DEVICE - The present application is to provide a light-emitting device comprising a metal reflective layer; a first transparent conductive oxide layer having a first refractive index; a second transparent conductive oxide layer having a second refractive index different from the first refractive index, and being between the metal reflective layer and the first transparent conductive oxide layer; and a light-emitting stack layer electrically connected to the second transparent conductive oxide layer substantially through the first transparent conductive layer; wherein there is no light absorbing material between the metal reflective layer and the first transparent conductive oxide layer.07-19-2012
20120181562PACKAGE HAVING A LIGHT-EMITTING ELEMENT AND METHOD OF FABRICATING THE SAME - A package includes at least a chip encapsulated by an encapsulant. Conductive bumps are disposed on a first surface of the chip, for a circuit board to be disposed thereon. A phosphor layer is formed on a second surface of the chip opposing the first surface. The package further comprises a light-pervious mask that covers the phosphor layer. Since the phosphor layer and the light-pervious mask are directly formed on the chip, the chip is prevented from being disposed in the groove of the substrate. As a result, the wet etching process is omitted, and the fabrication cost is reduced. A method of fabricating the package is also provided.07-19-2012
20120181561LIGHT-EMITTING ELEMENT - A light-emitting element, a light-emitting element unit and a light-emitting element package are provided, which are each reduced in reflection loss and intra-film light absorption by suppressing multiple light reflection in a transparent electrode layer and hence have higher luminance. The light-emitting element 07-19-2012
20120181560LED WIRING BOARD, LIGHT EMITTING MODULE, METHOD FOR MANUFACTURING LED WIRING BOARD AND METHOD FOR MANUFACTURING LIGHT EMITTING MODULE - An LED wiring board includes an insulator layer, a conductor layer (a wiring pattern layer) formed on the insulator layer, and a white reflective film which is formed on the insulator layer and which includes a white colorant and a binder thereof. The conductor layer includes a first wiring pattern and a second wiring pattern, and the white reflective film has a portion which is between the first wiring pattern and the second wiring pattern and which is thinner than both of the first wiring pattern and the second wiring pattern.07-19-2012
20090045427Photonic Crystal Light Emitting Device - A photonic crystal structure is formed in an n-type region of a III-nitride semiconductor structure including an active region sandwiched between an n-type region and a p-type region. A reflector is formed on a surface of the p-type region opposite the active region. In some embodiments, the growth substrate on which the n-type region, active region, and p-type region are grown is removed, in order to facilitate forming the photonic crystal in an n-type region of the device, and to facilitate forming the reflector on a surface of the p-type region underlying the photonic crystal. The photonic crystal and reflector form a resonant cavity, which may allow control of light emitted by the active region.02-19-2009
20090045426Semiconductor chip and method for producing a semiconductor chip - A semiconductor chip (02-19-2009
20090045424SILICONE BASED CIRCUIT BOARD INDICATOR LED LENS - The present invention relates generally to a light transmitting device. In one embodiment, the light transmitting device includes a light emitting diode (LED) chip, a surface mounting device and a lens comprising a silicone based material, wherein a portion of the lens achieves a total internal reflection of a light emitted by the LED chip.02-19-2009
20100327301LED LIGHTING DEVICE - An LED lighting device includes a circuit board, a plurality of LED units, a waterproof layer and a middle layer. The LED units are disposed on the circuit board by surface mounted way. The light beam emitted from the LED units emits from the light-emitting surface. The waterproof layer wraps the circuit board and the LED units. The middle layer is located between the light-emitting surface and the water-proof layer. The middle layer extends from a direction of the LED units being disposed on the circuit board so that the middle layer fully covers the light-emitting surface. The light beams passing through the light-emitting surface enters into the waterproof layer via the middle layer. Thereby, the middle layer is located between the LED units and the waterproof layer to make the color of the light beam be more uniform.12-30-2010
20130049045LIGHT EMITTING DEVICE PACKAGE - Embodiments disclose a light emitting device package including an insulating layer, a first lead frame and a second lead frame disposed on the insulating layer electrically separate from each other, a light emitting device disposed on the second lead frame electrically connected to the first lead frame and the second lead frame, the light emitting device includes a light emitting structure having a first conduction type semiconductor layer, an active layer, and a second conduction type semiconductor layer and a lens which encloses the light emitting device, wherein the insulating layer has an end portion projected beyond at least one of an end portion of the first lead frame and an end portion of the second lead frame, to form an opened region which exposes the insulating layer.02-28-2013
20130049054LIGHT-REFLECTIVE ANISOTROPIC CONDUCTIVE ADHESIVE AGENT, AND LIGHT EMITTING DEVICE - A light-reflective anisotropic conductive adhesive and light-emitting device capable of maintaining luminous efficiency of a light-emitting element and preventing the occurrence of a crack to obtain conduction reliability are provided. The light-reflective anisotropic conductive adhesive contains a thermosetting resin composite, conductive particles, and a light-reflective acicular insulating particles. These light-reflective acicular insulating particles are inorganic particles of at least one type selected from the group including titanium oxide, zinc oxide, and titanate.02-28-2013
20130049053SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING METAL REFLECTING LAYER - A semiconductor light emitting device includes a semiconductor structure, a transparent electrically-conducting layer, a dielectric film, and a metal reflecting layer. The semiconductor structure includes an active region. The transparent electrically-conducting layer is formed on the upper surface of the semiconductor structure. The dielectric film is formed on the upper surface of the transparent electrically-conducting layer. The metal reflecting layer is formed on the upper surface of the dielectric film. The dielectric film has at least one opening whereby partially exposing the transparent electrically-conducting layer. The transparent electrically-conducting layer is electrically connected to the metal reflecting layer through the opening. A barrier layer is partially formed and covers the opening so that the barrier layer is interposed between the transparent electrically-conducting layer and the metal reflecting layer.02-28-2013
20130049050NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT, NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT - A nitride semiconductor light-emitting device includes a nitride semiconductor light-emitting element, a package substrate and an optically transparent resin sealing portion. The nitride semiconductor light-emitting element includes a substrate, a nitride semiconductor multilayer portion having a light-emitting layer and a protective layer. The nitride semiconductor multilayer portion is provided on the substrate. The protective layer is provided on an upper portion of the nitride semiconductor multilayer portion. The resin sealing portion seals the nitride semiconductor light-emitting element that is mounted on the package substrate. An air gap layer is formed in at least one of an area between the substrate and the light-emitting layer in the nitride semiconductor light-emitting element, an area between the light-emitting layer and the protective layer in the nitride semiconductor light-emitting element and an area in the package substrate.02-28-2013
20130049049LIGHT EMITTING DEVICE PACKAGE - A light emitting device package includes: a package main body having a chip mounting region surrounded by side walls; lead frames spaced apart from one another, at least one portion thereof being positioned in the chip mounting region; a light emitting device mounted on the chip mounting region; a wire connecting the lead frame and the light emitting device; a lens disposed on the light emitting device; and a lens support unit formed to be higher than the wire in the chip mounting region and supporting the lens such that the lens does not come into contact with the wire.02-28-2013
20130049043ENGINEERED SUBSTRATES FOR SEMICONDUCTOR DEVICES AND ASSOCIATED SYSTEMS AND METHODS - Engineered substrates for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a transducer structure having a plurality of semiconductor materials including a radiation-emitting active region. The device further includes an engineered substrate having a first material and a second material, at least one of the first material and the second material having a coefficient of thermal expansion at least approximately matched to a coefficient of thermal expansion of at least one of the plurality of semiconductor materials. At least one of the first material and the second material is positioned to receive radiation from the active region and modify a characteristic of the light.02-28-2013
20130049042LIGHT EMITTING DEVICE - This disclosure discloses a light-emitting device. The light-emitting device comprises: a substrate; a first light-emitting stack comprising a first active layer; a bonding interface formed between the substrate and the first light-emitting stack; and a contact structure formed on the first light-emitting stack and comprising first, second and third contact layers. Each of the first, second and third contact layers comprises a doping material.02-28-2013
20130049041THERMAL CONDUCTIVITY AND PHASE TRANSITION HEAT TRANSFER MECHANISM INCLUDING OPTICAL ELEMENT TO BE COOLED BY HEAT TRANSFER OF THE MECHANISM - A thermal conductivity and phase transition heat transfer mechanism incorporates an active optical element. Examples of active optical elements include various phosphor materials for emitting light, various electrically driven light emitters and various devices that generate electrical current or an electrical signal in response to light. The thermal conductivity and phase transition between evaporation and condensation, of the thermal conductivity and phase transition heat transfer mechanism, cools the active optical element during operation. At least a portion of the active optical element is exposed to a working fluid within a vapor tight chamber of the heat transfer mechanism. The heat transfer mechanism includes a member that is at least partially optically transmissive to allow passage of light to or from the active optical element and to seal the chamber of the heat transfer mechanism with respect to vapor contained within the chamber.02-28-2013
20130049040PHOSPHOR INCORPORATED IN A THERMAL CONDUCTIVITY AND PHASE TRANSITION HEAT TRANSFER MECHANISM - A thermal conductivity and phase transition heat transfer mechanism has an opto-luminescent phosphor contained within the vapor chamber of the mechanism. The housing includes a section that is thermally conductive and a member that is at least partially optically transmissive, to allow emission of light produced by excitation of the phosphor. A working fluid also is contained within the chamber. The pressure within the chamber configures the working fluid to absorb heat during operation of the lighting device, to vaporize at a relatively hot location at or near at least a portion of the opto-luminescent phosphor as the working fluid absorbs heat, to transfer heat to and condense at a relatively cold location, and to return as a liquid to the relatively hot location. Also, the working fluid is in direct contact with or contains at least a portion of the opto-luminescent phosphor.02-28-2013
20130049039SOLID-STATE RADIATION TRANSDUCER DEVICES HAVING FLIP-CHIP MOUNTED SOLID-STATE RADIATION TRANSDUCERS AND ASSOCIATED SYSTEMS AND METHODS - Solid-state radiation transducer (SSRT) devices and methods of manufacturing and using SSRT devices are disclosed herein. One embodiment of the SSRT device includes a radiation transducer (e.g., a light-emitting diode) and a transmissive support assembly including a transmissive support member, such as a transmissive support member including a converter material. A lead can be positioned at a back side of the transmissive support member. The radiation transducer can be flip-chip mounted to the transmissive support assembly. For example, a solder connection can be present between a contact of the radiation transducer and the lead of the transmissive support assembly.02-28-2013
20130049046COLOR TUNABLE ORGANIC LIGHT EMITTING DIODE - The inventive concept provides an organic light emitting diode that can change its color. A color change is embodied by a micro cavity effect caused by a metal thin film partly formed on a positive pole. The organic light emitting diode includes a positive pole, an organic luminous layer and a negative pole that can be sequentially stacked on a substrate, and further include a metal thin film layer having first strip lines extending in a first direction and being arranged in a second direction crossing the first direction on the positive pole.02-28-2013
20130049044LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM HAVING THE SAME - Disclosed are a light emitting device package and a lighting system including the same. The light emitting device package includes a first lead frame and a second lead frame disposed on an insulating layer and electrically separated from each other by a separation part, and a light emitting device disposed on the second lead frame and electrically connected to the first lead frame, and the second lead frame includes a through part disposed opposite to the separation part such that the light emitting device is located therebetween.02-28-2013
20110001159SUBSTRATE FOR ELECTRONIC DEVICE, LAYERED BODY FOR ORGANIC LED ELEMENT, METHOD FOR MANUFACTURING THE SAME, ORGANIC LED ELEMENT, AND METHOD FOR MANUFACTURING THE SAME - An organic LED element having improved reliability in a long-term use, and having improved external extraction efficiency up to 80% of emitted light is provided. A substrate for an electronic device according to the present invention includes: a translucent substrate; a scattering layer including a glass and being provided on the translucent electrode; a coating layer provided on the scattering layer; and scattering materials that are present in the scattering layer and the coating layer and are not present on a surface of the coating layer, in which a surface of the coating layer has waviness in which a ratio Ra/Rλa of waviness height Ra to waviness period Rλa exceeds 1.0×1001-06-2011
20110001153SUBSTRATE BEARING AN ELECTRODE, ORGANIC LIGHT-EMITTING DEVICE INCORPORATING IT, AND ITS MANUFACTURE - A substrate bearing, on one main face, a composite electrode, which includes an electroconductive network which is a layer formed from strands made of an electroconductive material based on a metal and/or a metal oxide, and having a light transmission of at least 60% at 550 nm, the space between the strands of the network being filled by an electroconductive fill material. The composite electrode also includes an electroconductive coating, which may or may not be different from the fill material, covering the electroconductive network, and in electrical connection with the strands, having a thickness greater than or equal to 40 nm, of resistivity ρ1 less than 1001-06-2011
20110001152LED PACKAGE STRUCTURE FOR FORMING A STUFFED CONVEX LENS TO ADJUST LIGHT-PROJECTING ANGLE AND METHOD FOR MANUFACTURING THE SAME - An LED package structure includes a substrate unit, a light-emitting unit, a light-reflecting unit and a convex package unit. The substrate unit has a substrate body and a chip-placing area. The light-emitting unit has a plurality of LED chips electrically disposed on the chip-placing area. The light-reflecting unit has an annular reflecting resin body surroundingly formed on the substrate body by coating. The annular reflecting resin body surrounds the LED chips that are disposed on the chip-placing area to form a resin position limiting space above the chip-placing area, and the annular reflecting resin body has an inner surface that has been cleaned by plasma to form a clean surface. The convex package unit has a convex package resin body disposed on the substrate body in order to cover the LED chips. The position of the convex package resin body is limited in the resin position limiting space.01-06-2011
20090206352Luminescence conversion led - A luminescence conversion LED having a radiation emitting chip that is connected to electrical connections and is surrounded by a housing that comprises at least a basic body and a cap, the chip being seated on the basic body, in particular in a cutout of the basic body, and the primary radiation of the chip being converted at least partially into longer wave radiation by a conversion element, wherein the cap is formed by a vitreous body, the conversion means being contained in the vitreous body, the refractive index of the vitreous body being higher than 1.6, preferably at least n=1.7.08-20-2009
20100001304LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - A light emitting diode includes an LED element, a fluorescent material provided so as to cover the LED element, a substrate on which the LED element is mounted and made of ceramics or silicon, and a pair of electrode pads which are electrically connected to the LED element on the substrate.01-07-2010
20100001302Group-III Nitride for Reducing Stress Caused by Metal Nitride Reflector - A device structure includes a substrate; a group-III nitride layer over the substrate; a metal nitride layer over the group-III nitride layer; and a light-emitting layer over the metal nitride layer. The metal nitride layer acts as a reflector reflecting the light emitted by the light-emitting layer.01-07-2010
20090146164Blue-Shifted Triarylamine Polymer - A semiconductive conjugated polymer comprising a first repeat unit comprising general formula I:06-11-2009
20090321770Semiconductor Light-Emitting Device - The disclosed subject matter includes reliable semiconductor light-emitting devices having a favorable light distribution using an LED chip, which can emit light having a different color as compared to that emitted directly by the LED chip. The semiconductor light-emitting device can include an LED chip having an electrode, a phosphor layer located on the LED chip except for the electrode, a bonding wire connected to the electrode, and a light-reflecting resin. The light-reflecting resin can be disposed on a light-emitting surface that is exposed around the electrode and on the electrode including the bonding wire, and can prevent the LED chip from exhibiting a leak of light that is not wavelength-converted via the phosphor layer, while increasing light that passes through the phosphor layer. In addition, the light-reflecting resin can protect the bonding wire from vibration, etc. Thus, the disclosed subject matter can provide reliable semiconductor light-emitting devices having high brightness without substantial color variability and that can emit various colored light(s).12-31-2009
20090321765LIGHT EMITTING DIODE - An LED includes an LED die forming an emitting surface for emitting light generated thereby and a packaging layer encapsulating the LED die. The packaging layer includes an end surface facing the emitting surface of the LED die, and a lateral surface extending downwardly from an outer periphery of the end surface along an axial direction of the packaging layer. The end surface forms a convex portion confronting the LED die and an emitting portion surrounding the convex portion. Light of the LED die traveling to the convex portion is reflected to the lateral surface, and then is reflected to the emitting portion, and finally travels through the emitting portion to an outside.12-31-2009
20090321763LIGHT EMITTING DIODE12-31-2009
20100133570SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - Disclosed is a semiconductor light emitting device, and a method of manufacturing the same. The semiconductor light emitting device includes a first conductivity type semiconductor layer, an active layer disposed on the top of the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer disposed on the top of the active layer and comprising light extraction patterns in the top thereof, the light extraction patterns each having a columnar portion and a hemispherical top portion.06-03-2010
20100133565LEAD FRAME, LIGHT EMITTING DIODE HAVING THE LEAD FRAME, AND BACKLIGHT UNIT HAVING THE LIGHT EMITTING DIODE - An LED includes a light-emitting chip, a metal member, and a housing. The light-emitting chip generates light. The light-emitting chip is arranged on the metal member. The housing is combined with the metal member to fix the metal member. The housing has an opening portion exposing at least a portion of the light-emitting chip and the metal member. The metal member includes a base metal layer, a light-reflecting layer arranged on the base metal layer, and a protection layer arranged on the light-reflecting layer and including a metal.06-03-2010
20100133569Light emitting diode - A light emitting diode includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, and at least one transparent conductive layer. The transparent conductive layer comprises of a carbon nanotube structure.06-03-2010
20100133568LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - A light emitting device includes: a substrate including through electrodes; a light emitting element bonded onto the substrate and connected to the through electrodes; and a dielectric film made of a translucent inorganic material and spaced from the light emitting element so that an internal space is formed between the dielectric film and the substrate, emission light from the light emitting element being allowed to be emitted through the dielectric film, and a manufacturing the same are provided.06-03-2010
20100133576CASTING FOR AN LED MODULE - A casting adapted to carry a light emitting diode die and an anti-static die is disclosed. The casting comprises two electrodes for opposite electrodes and a wall. The light emitting diode die is mounted one of electrodes and the anti-static die is mounted on the other electrode. The wall is arranged between the light emitting diode die and the anti-static die. Further, the height of the wall is larger than that of the anti-static die to shade the anti-static die, whereby reflecting the light emitted from the light emitting diode die. Therefore, the reflection ratio of the light emitting diode die is improved, and the intensity generated by the whole light emitting diode is also improved.06-03-2010
20100133563ILLUMINATION SYSTEM COMPRISING A RADIATION SOURCE AND A LUMINESCENT MATERIAL - An illumination system, comprising a radiation source and a luminescent material comprising at least one phosphor capable of absorbing a part of light emitted by the radiation source and emitting light of wavelength different from that of the absorbed light; wherein said at least one phosphor is a yellow red-emitting cerium(III)-activated alkaline earth oxonitridoaluminosilicate of general formula Ca1−x−yAxAl1+a−bBbSi1−aN3−aOa:Cey, wherein A selected from the group comprising beryllium, magnesium, strontium, barium, zinc, manganese, lithium, sodium, potassium, rubidium, praseodymium, samarium, europium, and B selected from the group comprising boron, gallium, scandium and wherein 006-03-2010
20090315054Light emitting elements, light emitting devices including light emitting elements and methods of manufacturing such light emitting elements and/or devices - An emitting device including a first electrode, a second electrode spaced apart from the first electrode, an emitting pattern including a portion between the first electrode and the second electrode, and a block pattern including a portion between the emitting pattern and the first electrode and/or on a same level as the first electrode.12-24-2009
20090065791WHITE LIGHT LED WITH MULTIPLE ENCAPSULATION LAYERS - Light-emitting semiconductor devices with multiple encapsulation layers having more uniform white light when compared to conventional light-emitting devices and methods for producing the same are provided. The uniformity of the emitted white light may be quantified by comparing correlated color temperature (CCT) variations between devices, where embodiments of the present invention have a lower CCT variation when compared to conventional devices over a substantial range of light emission angles.03-12-2009
20090309116SEMICONDUCTOR DEVICE MEMBER, PRODUCTION METHOD OF SEMICONDUCTOR-DEVICE-MEMBER FORMATION LIQUID AND SEMICONDUCTOR DEVICE MEMBER, AND SEMICONDUCTOR-DEVICE-MEMBER FORMATION LIQUID, PHOSPHOR COMPOSITION, SEMICONDUCTOR LIGHT-EMITTING DEVICE, LIGHTING SYSTEM AND IMAGE DISPLAY SYSTEM USING THE SAME - To provide a semiconductor device member that is superior in heat resistance, light resistance, film-formation capability and adhesion, and is capable of sealing a semiconductor device and holding a phosphor without causing cracks, peelings and colorings even after used for a long period of time, the weight loss at the time of heating, measured by a predetermined weight-loss at-the-time-of-heating measurement method, is 50 weight % or lower and the ratio of peeling, measured by a predetermined adhesion evaluation method, is 30% or lower, in the semiconductor device member.12-17-2009
20090309113Optoelectronic Semiconductor Component - An optoelectronic semiconductor component, comprising a carrier substrate, and an interlayer that mediates adhesion between the carrier substrate and a component structure. The component structure comprises an active layer provided for generating radiation, and a useful layer arranged between the interlayer and the active layer. The useful layer has a separating area remote from the carrier substrate.12-17-2009
20090302344LIGHT-EMITTING APPARATUS PACKAGE, LIGHT-EMITTING APPARATUS, BACKLIGHT APPARATUS, AND DISPLAY APPARATUS - A light-emitting apparatus package of the present invention includes (i) an electrically insulated ceramic substrate, (ii) a first concave section formed in the direction of thickness of the ceramic substrate so as to form a light exit aperture in a surface of the ceramic substrate, (iii) a second concave section formed within the first concave section in the further direction of thickness of the ceramic substrate so that one or more light-emitting devices are provided therein, (iv) a wiring pattern for supplying electricity, which is provided in the first concave section, and (v) a metallized layer having light-reflectivity, which is (a) provided between the light-emitting device and the surface of the second concave section of the substrate, and (b) electrically insulated from the wiring pattern. On the account of this, the light-emitting apparatus package in which heat is excellently discharged and light is efficiently utilized and a light-emitting apparatus in which the light-emitting apparatus package is used can be obtained.12-10-2009
20090302343LIGHTING DEVICE AND SEMICONDUCTOR LIGHT SOURCE DEVICE - A small-sized lighting device can achieve wider light distribution patterns. The lighting device can include a semiconductor light emitting element configured to emit light from a first face and a second face thereof. A mounting substrate can be provided on which the semiconductor light emitting element is mounted. Light emitted from the second face can transmit through the mounting substrate, and a first optical system can be provided and configured to impart a first light distribution pattern to the light emitted from the first face of the semiconductor light emitting element. A second optical system can be provided and configured to impart a second light distribution pattern to light emitted from the second face of the semiconductor light emitting element.12-10-2009
20090302342Semiconductor Light-Emitting Device and Manufacturing Method - A semiconductor light-emitting device and a method for manufacturing the same can include a mixture resin encapsulating an LED chip in order to emit various colored lights, and can also include a separate transparent resin. The semiconductor light-emitting device can include a supporting plate, a base board located on the supporting plate, an upper base board located on the base board via an insulating adhesive layer, and an LED chip mounted on the supporting plate and located in a cavity composed of through-bores in the base boards. The transparent resin can be disposed circularly around an end of the insulating adhesive layer so as not to generate bubbles therein. The mixture resin can be disposed in the cavity except for that portion in which the transparent resin is located. Thus, the device can be configured to easily detect bubbles with a visual examination even if/when the bubbles are caused in the transparent resin. The disclosed device and method can prevent defective products from going to market.12-10-2009
20090302341LIGHT-EMITTING DIODE LIGHT SOURCE MODULE - A light-emitting diode light source module includes a light-emitting diode and an optical lens which faces the light-emitting diode. The optical lens includes a light-emitting surface, a light-extracting surface opposite to the light-emitting surface, and a side surface interconnecting the light-emitting surface and the light-extracting surface. The light-emitting surface includes a first light-emitting portion and a second light-emitting portion. The light-extracting surface includes a first light-extracting portion and a second light-extracting portion surrounding the first light-extracting portion. An angle between the first light-emitting portion and the second light-emitting portion is an obtuse angle. An angle between the second light-emitting portion and the side surface is an acute angle. An angle between the side surface and second light-extracting portion is an acute angle.12-10-2009
20090302340LIGHT EMITTING DEVICE - A light emitting device includes a light emitting element (LEE) on a mounting board, a metal reflector surrounding the side surfaces of the LEE on the mounting board, a conductor electrically connecting the LEE with the mounting board, and a sealing resin fitted within the reflector to cover and seal the LEE and the conductor. The mounting board includes a metal baseboard, and an insulating board laminated on the base board with a window hole larger than the outer periphery of the LEE. A mount for the LEE is on the base board within the window hole with a clearance defined from window hole side surfaces. The conductor straddles the clearance, and electrically connects the wiring pattern on the insulating board with the LEE and mount. Part of the clearance associated with the area that projects from the conductor to the mounting board is narrower than the remainder.12-10-2009
20090302339Light Emitting Device, Semiconductor Device, and Method of Fabricating the Devices - A semiconductor device in which degradation due to permeation of water and oxygen can be limited, e.g., a light emitting device having an organic light emitting device (OLED) formed on a plastic substrate, and a liquid crystal display using a plastic substrate. A layer to be debonded, containing elements, is formed on a substrate, bonded to a supporting member, and debonded from the substrate. A thin film is thereafter formed on the debonded layer. The debonded layer with the thin film is adhered to a transfer member. Cracks caused in the debonded layer at the time of debonding are thereby repaired. As the thin film in contact with the debonded layer, a film having thermal conductivity, e.g., film of aluminum nitride or aluminum nitroxide is used. This film dissipates heat from the elements and has the effect of preventing deformation and change in quality of the transfer member, e.g., a plastic substrate.12-10-2009
20090302338LIGHT-EMITTING DEVICE - A light-emitting device (12-10-2009
20090302337LIGHT EMITTING DIODE SYSTEM - An exemplary light emitting diode (LED) structure includes a base, a plurality of LED chips and an encapsulation material. The base defines a plurality of first channels located adjacent to a top surface thereof and a plurality of second channels located adjacent to a bottom surface thereof. Each of the first and the second channels extends along a vertical axis of the base. A projection of the first channels on the bottom surface of the base does not overlap with the projection of the second channels on the bottom surface of the base. The projection of the second channels on the bottom surface of the base is closer to the projection of one corresponding LED chip on the bottom surface of the base with respect to the projection of the first channels. A plurality of heat dissipation poles are filled in the first and the second channels.12-10-2009
20090302336SEMICONDUCTOR WAFERS AND SEMICONDUCTOR DEVICES AND METHODS OF MAKING SEMICONDUCTOR WAFERS AND DEVICES - Semiconductor wafers, semiconductor devices, and methods of making semiconductor wafers and devices are provided. Embodiments of the present invention are especially suitable for use with substrate substitution applications, such in the case of fabricating vertical LED. One embodiment of the present invention includes a method of making a semiconductor device, the method comprising providing a substrate; forming a plurality of polishing stops on the substrate; growing one or more buffer layers on the substrate; growing one or more epitaxial layers on the one or more buffer layers; and applying one or more metal layers to the one or more epitaxial layers. Additionally, the steps of affixing a second substrate to the one or more metal layers and removing the base substrate using a mechanical thinning process may be performed.12-10-2009
20120217529LIGHT EMITTING ELEMENT AND IMAGE DISPLAY APPARATUS USING THE LIGHT EMITTING ELEMENT - A light emitting element which can emit light in a uniform polarization state at a high efficiency and a higher luminance level is realized. The light emitting element of the present invention is a light emitting element including an active layer for generating light, the light emitting element including: a polarizer layer including a first region that transmits polarized light in a first direction and reflects other light from among the light generated at the active layer, and a second region that transmits polarized light in a second direction orthogonal to the first direction and reflects other light; a wave plate layer including a third region and a fourth region that allow the lights exited from the first region and the second region to enter, and to exit as light in the same polarization state; and a reflection layer that reflects the lights reflected at the first region and the second region.08-30-2012
20120217528LIGT EMITTING DEVICE - According to one embodiment, a light emitting device includes a light emitting element, a molded body, a first sealing layer and a converging lens. The light emitting element has a first surface and a second surface with an optical axis of emission light being perpendicular to the second surface. The molded body includes a recess. The first surface side of the light emitting element is disposed in the recess. The first sealing layer covers the light emitting element in the recess and includes a first transparent resin and phosphor particles. The converging lens is provided on the first sealing layer and has a refractive index increasing with increase of distance from the optical axis. The refractive index at a position in contact with an outer edge of the upper surface of the first sealing layer is higher than a refractive index of the first transparent resin.08-30-2012
20120217527LIGHT-EMITTING DIODE ELEMENT AND LIGHT-EMITTING DIODE DEVICE - A light-emitting diode element includes an optical semiconductor layer, an electrode unit to be connected to the optical semiconductor layer, and an encapsulating resin layer that encapsulates the optical semiconductor layer and the electrode unit, the encapsulating resin layer containing a light reflection component.08-30-2012
20120217524SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHT EMITTING APPARATUS - According to one embodiment, a semiconductor light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, a light emitting layer, a p-side electrode and an n-side electrode. The p-type semiconductor layer includes a nitride semiconductor and has a first major surface. The n-type semiconductor layer includes a nitride semiconductor and has a second major surface. The light emitting layer is provided between the n-type semiconductor layer and the p-type semiconductor layer. The p-side electrode contacts a part of the p-type semiconductor layer on the first major surface. The n-side electrode contacts a part of the n-type semiconductor layer on the second major surface. The n-side electrode is provided outside and around the p-side electrode in a plan view along a direction from the p-type semiconductor layer to the n-type semiconductor layer.08-30-2012
20120217522LIGHT EMITTING DIODE - A light emitting diode (“LED”) includes a substrate, a light emitting unit on the substrate and generating light, an encapsulation layer overlapping an entire of exposed surfaces of the light emitting unit, and a coating layer including an organic material and on the encapsulation layer. A refractive index of the coating layer is greater than a refractive index of air and less than a refractive index of the encapsulation layer.08-30-2012
20110006332LEDs with LOW OPTICAL LOSS ELECTRODE STRUCTURES - Semiconductor devices in which one or more LEDs are formed include a dielectric region formed on a n/p region of the semiconductor, and that a metallic electrode can be formed on (at least partially on) the region of dielectric material. A transparent layer of a material such as Indium Tin Oxide can be used to make ohmic contact between the semiconductor and the metallic electrode, as the metallic electrode is separated from physical contact with the semiconductor by one or more of the dielectric material and the transparent ohmic contact layer (e.g., ITO layer). The dielectric material can enhance total internal reflection of light and reduce an amount of light that is absorbed by the metallic electrode.01-13-2011
20130056781LIGHT EMITTING DEVICE - The light emitting device has a light emitting element 03-07-2013
20130056779LIGHT-EMITTING DIODE DEVICES - An LED device includes a die carrier having a die mounting surface and electrical connection regions. An LED die is mounted on the die mounting surface of the die carrier. The LED die includes a substrate, a first type semiconductor layer disposed atop the substrate, a second type semiconductor layer disposed atop the first type semiconductor layer, an another first type semiconductor layer disposed atop the second type semiconductor layer, at least three through holes each extending from the substrate to a corresponding semiconductor layer, an insulative layer formed on inner walls of the through holes, and electrically conductive linkers mounted within the through holes. Each electrically conductive linker has an end electrically connected to a corresponding semiconductor layer and an opposite end protruding outwardly from the corresponding through hole for electrical connection to a corresponding electrical connection region. A light transmissible protective layer covers the LED die.03-07-2013
20130056780LIGHT EMITTING DEVICE - A light emitting device, comprising: a package which is formed of a resin and has a recess which is provided with a bottom face and two pairs of opposite inner walls surrounding the bottom face, the package having two pairs of opposite side walls made of the inner walls and corresponding outer walls; a lead frame exposed at the bottom face; a light emitting element which is provided on the lead frame; and a sealing resin provided in the recess for sealing the light emitting element, wherein the lead frame has a bottom portion and a reflector portion exposed along one of the pair of opposite inner walls, and a first angle between the reflector portion and the bottom face is greater than a second angle between another one of the pair of opposite inner walls which is opposite to the reflector portion and the bottom face, is provided.03-07-2013
20130056777III-NITRIDE LIGHT-EMITTING DEVICES WITH REFLECTIVE ENGINEERED GROWTH TEMPLATES AND MANUFACTURING METHOD - A light emitter includes a first mirror that is an epitaxially grown metal mirror, a second mirror, and an active region that is epitaxially grown such that the active region is positioned at or close to, at least, one antinode between the first mirror and the second mirror.03-07-2013
20130056774LENS, PACKAGE AND PACKAGING METHOD FOR SEMICONDUCTOR LIGHT-EMITTING DEVICE - This invention provides lenses having a pendant shape profile and their applications and forming methods. In an embodiment, the lenses are used to encapsulate one or more light-emitting diode chips so as to increase the light extraction efficiency.03-07-2013
20130056778LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a light emitting device includes a substrate, a first electrode, a second electrode, an insulating section, a light emitting section, and a third electrode. The substrate with a groove is provided at a surface. The first electrode is provided inside the groove. The second electrode is provided on the substrate and the first electrode. The insulating section is provided on the second electrode. The light emitting section is provided on the second electrode and the insulating section. The third electrode is provided on the light emitting section. The first electrode has a side surface inclined away from a portion of the light emitting section provided on the second electrode toward bottom portion side of the groove.03-07-2013
20130056782Optoelectronic Semiconductor Part Containing Alkali-Free and Halogen-Free Metal Phosphate - An optoelectronic semiconductor part comprising a light source, a housing and electrical connections, wherein the optoelectronic semiconductor part comprises a component which contains metal phosphate, and wherein the metal phosphate is substantially alkali-free and halogen-free.03-07-2013
20130056776PLATE - A plate including a substrate, a metal reflection layer and an oxidation protection layer is provided. The substrate has a first surface and a second surface opposite to the first surface. The metal reflection layer is disposed on the first surface of the substrate. The oxidation protection layer covers the metal reflection layer. The metal reflection layer is disposed between the oxidation protection layer and the first surface of the substrate. At least one light emitting diode chip is adapted to eutectic bonding on the plate.03-07-2013
20100102350SEMICONDUCTOR LIGHT EMITTING DEVICE - Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a light emitting structure comprising a plurality of compound semiconductor layers, an electrode layer on the light emitting structure, a conductive support member on the electrode layer, a conductive layer formed along a peripheral portion of an upper surface of the light emitting structure, and an insulating layer on the conductive layer.04-29-2010
20130161669LIGHT-EMITTING DIODE WITH CURRENT DIFFUSION STRUCTURE AND A METHOD FOR FABRICATING THE SAME - An LED with a current diffusion structure comprises an N-type semiconductor layer, a light emitting layer, a P-type semiconductor layer, an N-type electrode, a P-type electrode and a current blocking layer. The N-type semiconductor layer, light emitting layer and P-type semiconductor layer form a sandwich structure. The N-type and P-type electrodes are respectively arranged on the N-type and P-type semiconductor layers. The current blocking layer has the pattern of the N-type electrode and is embedded inside the N-type semiconductor layer. Thereby not only current generated by the N-type electrode detours the current blocking layer and uniformly passes through the light emitting layer, but also prevents interface effect to increase impedance. Thus is promoted lighting efficiency of LED. Further, as main light-emitting regions of the light emitting layer are far from the N-type electrode, light shielded by the N-type electrode is reduced and illumination of LED is thus enhanced.06-27-2013
20130161671LIGHT EMITTING DIODE WITH SIDEWISE LIGHT OUTPUT STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A light emitting diode (LED) includes a substrate, an electrode structure positioned on the substrate, an LED component electrically connected to the electrode structure, and a lens structure positioned on the substrate and covering the LED component. The lens structure includes a rugged structure adjacent to the substrate; the roughness of the rugged structure decreases gradually along a direction from a center of the lens structure center toward a peripheral edge thereof. The present disclosure also provides a method for manufacturing the LED light source.06-27-2013
20130161672LIGHT EMITTING DIODE PACKAGE WITH IMPROVED OPTICAL LENS STRUCTURE - An LED package includes a substrate, two electrodes, an LED die and a lens. The substrate includes a top surface, a bottom surface, a plurality of side surfaces interconnecting the top surface with the bottom surface, and two opposite notches depressed downward from lateral peripheral portions of the top surface. The two electrodes penetrate through the substrate, and each of the two electrodes is exposed at both the top surface and the bottom surface of the substrate. The LED die is arranged on the substrate and electrically connected to the two electrodes. The lens is arranged on the substrate and covers the LED die. The lens includes a contacting surface adjoining the top surface of the substrate, and two protrusions extending from lateral peripheral portions of the contacting surface and respectively embedded in the two notches.06-27-2013
20130161673LIGHT EMITTING DIODE PACKAGE HAVING FLUORESCENT FILM DIRECTLY COATED ON LIGHT EMITTING DIODE DIE AND METHOD FOR MANUFACTURING THE SAME - A method for packaging an LED, includes steps: providing a supporting board and then dripping a gel mixed with fluorescent therein on the supporting board; scraping the gel over the supporting board with a scraper form a gelatinous fluorescent film on the supporting board, and solidifying the gelatinous fluorescent film pieces to form a solidified fluorescent film; cutting the solidified fluorescent film into individual pieces, and peeling the solid fluorescent films from the supporting board; attaching one piece of the fluorescent film on a light outputting surface of an LED die; mounting the LED die on a substrate, and electrically connecting the LED die to the circuit structure; and forming an encapsulation on the substrate to cover the LED die.06-27-2013
20130161675LIGHT EMITTING DEVICE - Disclosed is a light emitting device. The light emitting device comprises a light emitting structure comprising a plurality of compound semiconductor layers; and a light extraction structure on the light emitting structure. The light extraction structure comprises a plurality of first layers and a plurality of second layers which are alternately disposed with each other to have a negative refraction index.06-27-2013
20130161676GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - The invention provides a Group III nitride semiconductor light-emitting device which has a light extraction face at the n-layer side and which provides high light emission efficiency. The light-emitting device is produced through the laser lift-off technique. The surface of the n-GaN layer of the light-emitting device is roughened. On the n-GaN layer, a transparent film is formed. The transparent film satisfies the following relationship: 0.28≦n×d06-27-2013
20120112236LED CHIP ASSEMBLY, LED PACKAGE, AND MANUFACTURING METHOD OF LED PACKAGE - Provided is a highly reliable LED package with significantly improved heat radiating properties, manufacturing method of the LED package, and an LED chip assembly used in the LED package. The LED package is characterized in that the LED chip assembly (05-10-2012
20120112235Luminous Device Having a Flexible Printed Circuit Board - A lighting device (05-10-2012
20120112234ORGANIC EL PANEL - Each pixel includes a region where a lower reflection film is not present. In each pixel, there is a region where a microcavity structure is formed between a counter electrode and a lower reflection film and another region where the microcavity structure is not formed. The regions differentiated in cavity length can differently enhance the peak wavelength so as to improve the viewing angle dependence. Furthermore, in each of R, G, and B light emitting pixels, the area ratio of a region where the microcavity structure is present and another region where the microcavity structure is not present can be adjusted so as to eliminate the differences caused by the microcavity structure.05-10-2012
20120112233SEMICONDUCTOR LIGHT EMITTING DEVICE - Discussed is a semiconductor light emitting device. The semiconductor light emitting device includes a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, a second conductive semiconductor layer under the active layer, a second electrode layer under the second conductive semiconductor layer, and a transmissive conductive layer at least one part between the second conductive semiconductor layer and the second electrode layer.05-10-2012
20120112232SEMICONDUCTOR LIGHT EMITTING DEVICE - Disclosed are a semiconductor light emitting device. The semiconductor light emitting device comprises a light emitting structure comprising a plurality of compound semiconductor layers, a passivation layer at the outside of the light emitting structure, a first electrode layer on the light emitting structure, and a second electrode layer under the light emitting structure.05-10-2012
20120112231LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE HAVING THE SAME - Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers, an electrode on the first conductive type semiconductor layer, a reflective layer under the second conductive type semiconductor layer, a protective layer on an outer portion of the reflective layer, the protective layer including a first portion between the reflective layer and the second conductive layer, and a second portion that extends beyond the second conductive type semiconductor layer; and a light extraction structure including a compound semiconductor on the second portion of the protective layer.05-10-2012
20120112223LED PACKAGE - An LED package includes a substrate, an LED chip, a transparent thermal insulation layer and an encapsulation including phosphor. The LED chip is arranged on the substrate and electrically connected to the substrate. The transparent thermal insulation layer is located between the LED package and the package layer whereby the phosphor is not affected by a high temperature generated by the LED chip when the LED chip is activated to generate light.05-10-2012
20120112230INTEGRATED ANTENNA DEVICE MODULE FOR GENERATING TERAHERTZ CONTINOUS WAVE AND FABRICATION METHOD THEREOF - The exemplary embodiments of the present invention include forming a photoconductor thin film on a front surface of a substrate; forming a photoconductor thin film pattern by patterning the photoconductor thin film; and forming a metal electrode on the photoconductor thin film pattern.05-10-2012
20120112226LIGHT-EMITTING DIODE AND METHOD FOR THE PRODUCTION OF A LIGHT-EMITTING DIODE - A light emitting diode includes a semiconductor body including an active region that produces radiation, a carrier body fastened to the semiconductor body on an upper side of the semiconductor body, the carrier body including a luminescence conversion material consisting of a ceramic luminescence conversion material, a mirror layer applied to the semiconductor body on an underside of the semiconductor body remote from the upper side, and two contact layers, a first contact layer of the contact layers connected electrically conductively to an n-conducting region of the semiconductor body and a second contact layer of the contact layers connected electrically conductively to a p-conducting region of the semiconductor body.05-10-2012
20120112224METHOD FOR PRODUCING A STRUCTURE WITH A TEXTURED EXTERNAL SURFACE, INTENDED FOR AN ORGANIC LIGHT EMITTING DIODE DEVICE, AND A STRUCTURE WITH A TEXTURED EXTERNAL SURFACE - A process for obtaining a structure having a textured external surface for an organic light-emitting device, which structure includes a mineral glass substrate having a surface which is provided with projections and depressions, the process including the deposition of an etching mask on the surface of the substrate and the etching of the surface of the substrate around the etching mask, and possible removal of the mask, wherein one of the steps of preparing the etching mask consists in forming a multitude of nodules randomly arranged on the surface of the substrate and made of a material possessing no affinity with the glass and wherein, after the etching step, the structure undergoes a moderating step in which the slopes of the projections of submicron height and width obtained by etching are moderated sufficiently to form the thus moderated textured external surface.05-10-2012
20120305971LIGHT EMITTING DEVICE LENS, LIGHT EMITTING DEVICE MODULE INCLUDING LIGHT EMITTING DEVICE LENS AND METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE MODULE USING LIGHT EMITTING DEVICE LENS - A lens according to an embodiment of the present invention may include a first depression and a second depression having predetermined patterns in a lower portion of the lens, and a phosphor layer and the lens may be collectively formed by disposing the lens after spraying a phosphor rather than separately forming the phosphor on the LED chip during a manufacture of the LED module. Accordingly, a production tolerance, and the like of an LED module may be removed to improve yield, and a manufacturing process of the LED module may be simplified. A lens may have an upper portion formed in advance in one of a hemispherical shape, an oval shape, and a batwing shape having a concave central portion, thereby implementing a customized lens according to a predetermined application.12-06-2012
20130056775LIGHT SOURCE DEVICE AND LIGHTING DEVICE - A light source can include: a light source that emits light of a predetermined wavelength within a wavelength region covering the wavelength of ultraviolet light and that of visible light; and a wavelength conversion layer containing a fluorescent material of at least one type that is excited by excitation light from the fixed light source to emit fluorescent light of a wavelength longer than that of light emitted from the fixed light source. The fixed light source and the wavelength conversion layer can be spaced from each other. The light source device can employ a reflection system of extracting at least fluorescent light from an incident surface of the wavelength conversion layer through which excitation light from the fixed light source enters the wavelength conversion layer. The wavelength conversion layer can have a surface structure with depressions or projections.03-07-2013
20130056773LED PACKAGE AND METHOD OF THE SAME - LED package includes a substrate with pre-formed P-type through-hole and N-type through-hole through the substrate; a reflective layer formed on an upper surface of the substrate; a LED die having P-type pad and N-type pad aligned with the P-type through-hole and the N-type through-hole; wherein the LED die is formed on the upper surface of the substrate; a refilling material within the P-type through-hole and the N-type through-hole thereby forming electrical connection from the P-type pad and the N-type pad; and a lens formed over the upper surface of the substrate.03-07-2013
20130056772LIGHT-EMITTING DEVICE WITH NARROW DOMINANT WAVELENGTH DISTRIBUTION AND METHOD OF MAKING THE SAME - This application discloses a light-emitting device with narrow dominant wavelength distribution and a method of making the same. The light-emitting device with narrow dominant wavelength distribution at least includes a substrate, a plurality of light-emitting stacked layers on the substrate, and a plurality of wavelength transforming layers on the light-emitting stacked layers, wherein the light-emitting stacked layer emits a first light with a first dominant wavelength variation; the wavelength transforming layer absorbs the first light and converts the first light into the second light with a second dominant wavelength variation; and the first dominant wavelength variation is larger than the second dominant wavelength variation.03-07-2013
20100084676ORGANIC EL DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - An organic EL display device forms an organic EL layer on a pixel portion by a transfer method without using a sophisticated optical system. A patterned light reflection layer is formed on a donor substrate. A light absorption layer is formed on the light reflection layer. An organic EL material layer is formed on the light absorption layer. An element substrate on which banks, lower electrodes and the like are formed is arranged to face a donor substrate in an opposed manner. When light is radiated to the donor substrate from a flash lamp or the like, only portions of the optical absorption layer where the light reflection layers are not formed are heated, and such portions of the organic EL material layer are evaporated and applied to a lower electrode formed on the element substrate. Due to such steps, the organic EL layer can be formed by a transfer method without using a sophisticated optical system.04-08-2010
20100127292Wafer level led package structure for increasing light-emitting efficiency and method for making the same - A wafer level LED package structure for increasing light-emitting efficiency includes: a light-emitting unit, an insulating unit, two first conductive units and two second conductive units. The light-emitting unit has a light-emitting body, a positive conductive layer, a negative conductive layer, and a reflecting insulating layer formed between the positive conductive layer and the negative conductive layer. The light-emitting body has a bottom material layer and a top material layer. The insulating unit is formed around an outer area of a top surface of the bottom material layer and formed on a top surface of the reflecting insulating layer. One first conductive unit is formed on one part of the positive conductive layer and the insulating unit, and another first conductive unit is formed on one part of the negative conductive layer and the insulating unit. The two second conductive units are respectively formed on the two first conductive units.05-27-2010
20090078950Package structure with replaceable element for light emitting diode - A package structure for an LED is disclosed. The structure includes a first substrate, an LED chip, a second substrate, a protection layer and a replaceable optical element. The LED chip is disposed on the first substrate. The second substrate is disposed on the first substrate, and surrounds the LED chip. The second substrate has a first thread. The protection layer covers the LED chip. The replaceable optical element has a second thread, and is fastened to the second substrate through the first thread. An interior wall of the optical element corresponds to a surface of the protection layer in arc shape.03-26-2009
20090267098SEMICONDUCTOR LIGHT EMITTING DEVICE - Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer comprising a plurality of recesses on the active layer.10-29-2009
20090267097METHOD OF FABRICATING PHOTOELECTRIC DEVICE OF GROUP III NITRIDE SEMICONDUCTOR AND STRUCTURE THEREOF - A method of fabricating a photoelectric device of Group III nitride semiconductor comprises the steps of: forming a first Group III nitride semiconductor layer on a surface of an original substrate; forming a patterned epitaxial-blocking layer on the first Group III nitride semiconductor layer; forming a second Group III nitride semiconductor layer on the epitaxial-blocking layer and the first Group III nitride semiconductor layer not covered by the epitaxial-blocking layer and then removing the epitaxial-blocking layer; forming a third Group III nitride semiconductor layer on the second Group III nitride semiconductor layer; depositing or adhering a conductive layer on the third Group III nitride semiconductor layer; and releasing a combination of the third Group III nitride semiconductor layer and the conductive layer apart from the second Group III nitride semiconductor layer.10-29-2009
20090267096Luminous devices, packages and systems containing the same, and fabricating methods thereof - The present invention is directed to a vertical-type luminous device and high through-put methods of manufacturing the luminous device. These luminous devices can be utilized in a variety of luminous packages, which can be placed in luminous systems. The luminous devices are designed to maximize light emitting efficiency and/or thermal dissipation. Other improvements include an embedded zener diode to protect against harmful reverse bias voltages.10-29-2009
20090267095Light-Emitting Device with Reflection Layer and Structure of the Reflection Layer - The present invention provides a light-emitting device with a reflection layer and the structure of the reflection layer. The reflection layer comprises a variety of dielectric materials. The reflection layer includes a plurality of dielectric layers. The materials of the plurality of dielectric layers have two or more types with two or more thicknesses, except for the combination of two material types and two thicknesses, for forming the reflection layer with a variety of structures. The reflection layer according to the present invention can be applied to light-emitting diodes of various types to form new light-emitting devices. Owing to its excellent reflectivity, the reflection layer can improve light-emitting efficiency of the light-emitting devices.10-29-2009
20090267094LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - The present invention relates to a light emitting diode and a method for manufacturing the same. The light emitting diode includes a base, a light emitting chip on the base, a light permeable encapsulation encapsulating the light emitting chip to the base. The encapsulation defines a plurality of apertures extending from a bottom end toward a top end of the encapsulation.10-29-2009
20090267100NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A nitride-based semiconductor device includes a substrate, a first step portion formed on a main surface side of a first side end surface of the substrate, a second step portion formed on the main surface side of a second side end surface substantially parallel to the first side end surface on an opposite side of the first side end surface and a nitride-based semiconductor layer whose first side surface is a (000-1) plane starting from a first side wall of the first step portion and a second side surface starting from a second side wall of the second step portion on the main surface.10-29-2009
20130062654LIGHT EXTRACTION SHEET, ORGANIC ELECTROLUMINESCENCE ELEMENT AND ILLUMINATION DEVICE - Disclosed is a novel light extraction sheet which not only improves light extraction efficiency but suppresses color change with the angle of observation, an organic EL dement employing this light extraction sheet, and art illumination device employing the element. The light extraction sheet is featured in that it comprises a transparent resin film and provided thereon, a light scatter layer containing a binder resin and light scattering particles with an average particle size of front 0.2 to 1.0 μm dispersed in the binder resin and a concavo-convex layer containing a binder resin and spherical particles with an. average particle size of from 3 to 10 μm.03-14-2013
20130062652LED DEVICES HAVING LENSES AND METHODS OF MAKING SAME - Disclosed herein are LED devices having lenses and methods of making the devices. The LED devices are made using an optical layer comprising a plurality of lens features. The optical layer is disposed relative to the LED die such that at least one LED die is optically coupled to at least one lens feature. A lens can then be made from the lens feature and excess optical layer removed to provide the device.03-14-2013
20130062651CARRIER FOR A LIGHT EMITTING DEVICE - A semiconductor light emitting device is mounted on a support substrate. The support substrate is disposed in an opening in a carrier. In some embodiments, the support substrate is a ceramic tile and the carrier is a low cost material with a lateral extent large enough to support a lens molded over or attached to the carrier.03-14-2013
20130062653METHODS FOR PACKAGING LIGHT EMITTING DEVICES AND RELATED MICROELECTRONIC DEVICES - A method for forming a light emitting device includes providing a light emitting diode (LED) configured to emit light of a first color and providing a plurality of semi-spherical lenses made of a silicone material that contains no phosphor material. Each of the lenses has a layer of phosphor material attached thereto. The method also includes testing the plurality of lenses to select a subset of lenses that converts light of the first color to light of a second color. The method further includes forming the light emitting device using the LED, one of the selected subset of lenses, and a heat conductive substrate. In an embodiment, after the testing of the plurality of lenses, one of the selected subset of lenses is disposed overlying the LED. In another embodiment, the testing of the plurality of lenses is conducted with a light source other than the LED.03-14-2013
20130062650LED PACKAGE AND MOLD OF MANUFACTURING THE SAME - The present disclosure provides a light emitting diode (LED) package, which includes a first substrate with electrodes disposed on a top thereof and a second substrate with an LED chip disposed on a top thereof. The LED chip is connected with the electrodes via wires. A first package layer is disposed on the top of the first substrate to cover the wires and electrodes. A fluorescent layer is disposed on the top of the second substrate to cover the LED chip. The present disclosure also provides a mold and a method of manufacturing the LED package.03-14-2013
20130062649LIGHT-EMITTING DEVICE - Disclosed is a light-emitting device having a wide luminous-intensity distribution characteristic with a simple structure. The light-emitting device includes a resin package in which an LED chip, a first inner portion of a first lead terminal, and a second inner portion of a second lead terminal are accommodated and which has a second recess portion formed so that a portion including a first recess portion of the first inner portion of the first lead terminal as well as a portion of the second inner portion of the second lead terminal are exposed to a bottom portion of the second recess portion, and a resin portion containing phosphors and filled in the first recess portion of the first lead terminal and in the second recess portion of the resin package. A photoreflective filler is contained in a region opposed to the LED chip of the resin portion including the phosphors.03-14-2013
20130062644SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a method for manufacturing a semiconductor light emitting device includes: preparing a metal plate including first and second frames, the first frames being disposed alternately with the second frames to be apart from the second frames, a light emitting element being affixed to each of the first frames and connected via a metal wire to an adjacent second frame; forming a first resin on a first major surface of the metal plate to cover the first and second frames, and the light emitting elements; making a trench from a second major surface side; and filling a second resin into an interior of the trench from the first major surface side. The method further includes forming the resin packages by dividing the second resin along the trench, an outer edge of the first resin being covered with the second resin.03-14-2013
20130062646SYSTEM AND METHOD FOR FABRICATING LIGHT EMITTING DIODE (LED) DICE WITH WAVELENTH CONVERSION LAYERS - A system for fabricating light emitting diode (LED) dice includes a wavelength conversion layer contained on a substrate on an adhesive layer configured to have reduced adhesiveness upon exposure to a physical energy, such as electromagnetic radiation or heat. The system also includes a curing apparatus configured to reduce the adhesiveness of the adhesive layer to facilitate removal of the wavelength conversion layer from the substrate, and an attachment apparatus configured to remove the wavelength conversion layer from the substrate and to attach the wavelength conversion layer to a light emitting diode (LED) die. A method for fabricating light emitting diode (LED) dice includes the steps of exposing the adhesive layer on the substrate to the physical energy to reduce the adhesiveness of the adhesive layer, removing the wavelength conversion layer from the substrate, and attaching the wavelength conversion layer to the light emitting diode (LED) die.03-14-2013
20130062648LIGHT-EMITTING DEVICE AND LIGHT-EMITTING DEVICE MANUFACTURING METHOD - A light-emitting device includes: a light-emitting element that generates ultraviolet light; a first wavelength conversion layer placed on the light-emitting element, the first wavelength conversion layer including a plurality of types of phosphor particles dispersed in a transparent resin, each of the plurality of types of phosphor particles converting the ultraviolet light into light having a longer wavelength; and a second wavelength conversion layer placed on at least a part of the first wavelength conversion layer, the second wavelength conversion layer including at least any of the plurality types of phosphor particles dispersed in a transparent resin.03-14-2013
20130062647LIGHT EMITTING DEVICES INCLUDING WAVELENGTH CONVERTING MATERIAL - Light-emitting devices and associated methods are provided. The light emitting devices can have a wavelength converting material-coated emission surface.03-14-2013
20130062645LIGHT EMITTING DEVICE - Embodiments provide a light emitting device comprising a support member, a light emitting structure disposed on the support member, the light emitting structure comprising a first semiconductor layer comprises a first and second regions, a second semiconductor layer disposed on the second region, and an active layer between the first and second semiconductor layers, a first electrode disposed on the first semiconductor layer and a second electrode disposed on the second semiconductor layer, wherein the support member includes metal ions to convert light of a first wavelength emitted from the active layer into light of a second wavelength different from the first wavelength.03-14-2013
20130062642LED PACKAGE DEVICE - An LED package device comprises a substrate, a first electrode, a second electrode, a reflector, an encapsulation layer and an LED die. The substrate includes a top surface and a bottom surface opposite to the top surface, wherein the first and the second electrodes are located on the top surface of the substrate. A sum of the areas of the first and the second electrodes on the top surface is smaller than ¼-⅔ the area of the top surface. Therefore, an increased contacting area between the reflector and the substrate is formed to enhance the tightness of the LED package device.03-14-2013
20130062641LED LAMP - A LED lamp is disclosed which has a plurality of light unit, each of the light unit has at least one flat metal lead for heat dissipation and the lower part of the metal lead is mounted on a heat sink for a further heat dissipation.03-14-2013
20130062640LIGHT EMITTING DIODE (LED) PACKAGE HAVING WAVELENGTH CONVERSION MEMBER AND WAFER LEVEL FABRICATION METHOD - A light emitting diode (LED) package includes a substrate and a light emitting diode (LED) die on the substrate configured to emit electromagnetic radiation in a first spectral region. The (LED) package also includes a dielectric layer on the (LED) die and a wavelength conversion member on the dielectric layer configured to convert the electromagnetic radiation in the first spectral region to electromagnetic radiation in a second spectral region. The (LED) package also includes an interconnect comprising a conductive trace on the wavelength conversion member and on the dielectric layer in electrical contact with a die contact on the (LED) die and with a conductor on the substrate, and a transparent dome configured as a lens encapsulating the (LED) die.03-14-2013
20130062643LIGHT EMITTING DEVICE - According to one embodiment, a light emitting device includes: a first lead, a recess being provided in the first lead; a light emitting element fixed to a bottom surface of the recess via a conductive paste at a back surface on an opposite side to a light emitting surface of the light emitting element; and a second lead disposed away from the first lead and electrically connected to the light emitting element via a metal wire. An area of the bottom surface is larger than an area of the light emitting surface. The paste is put in with a thickness sufficient to cover at least part of a side surface in contact with the light emitting surface and the back surface of the light emitting element and at least part of a wall surface of the recess in the recess.03-14-2013
20130062639METHOD FOR FABRICATING LIGHT EMITTING DIODE (LED) DEVICES HAVING OUTPUT WITH SELECTED CHARACTERISTICS - A method for fabricating a light emitting diode (LED) device includes the steps of forming (or providing) a plurality of LED dice, forming a plurality of wavelength conversions layers, and then evaluating at least one electromagnetic radiation emission characteristic of each LED die and at least one color characteristic of each wavelength conversion layer. The method also includes the steps of comparing the evaluated characteristic of each LED die and the evaluated characteristic of each wavelength conversion layer to a database, selecting a selected LED die and a selected wavelength conversion layer based on the evaluating and comparing steps, and then attaching the selected wavelength conversion layer to the selected LED die.03-14-2013
20130062638SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device has a semiconductor laminate including first and second conductivity type semiconductor layers respectively providing first and second main surfaces and an active layer. The semiconductor laminate is divided into first and second regions. At least one contact hole is formed to pass through the active layer from the second main surface of the first region. A first electrode is formed on the second main surface to be connected to the first conductivity type semiconductor layer of the first region and the second conductivity type semiconductor layer of the second region. A second electrode is formed on the second main surface of the first region to be connected to the second conductivity type semiconductor layer of the first region and the first conductivity type semiconductor layer of the second region.03-14-2013
20110012160SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device 01-20-2011
20110012158MANUFACTURING METHOD AND INTEGRATED CIRCUIT HAVING A LIGHT PATH TO A PIXILATED ELEMENT - The present invention relates to a manufacturing method of an integrated circuit (IC) comprising a substrate (01-20-2011
20110012157TRANSPARENT HEAT SPREADER FOR LEDS - A heat spreader for an LED can include a thermally conductive and optically transparent member. The bottom side of the heat spreader can be configured to attach to a light emitting side of the LED. The top and/or bottom surface of the heat spreader can have a phosphor layer formed thereon. The heat spreader can be configured to conduct heat from the LED to a package. The heat spreader can be configured to conduct heat from the phosphors to the package. By facilitating the removal of heat from the LED and phosphors, more current can be used to drive the LED. The use of more current facilitates the construction of a brighter LED, which can be used in applications such as flashlights, displays, and general illumination. By facilitating the removal of heat from the phosphors, desired colors can be better provided.01-20-2011
20110012156LIGHT EMITTING DEVICES INCLUDING WAVELENGTH CONVERTING MATERIAL - Light-emitting devices and associated methods are provided. The light emitting devices can have a wavelength converting material-coated emission surface.01-20-2011
20110012155Semiconductor Optoelectronics Structure with Increased Light Extraction Efficiency and Fabrication Method Thereof - A semiconductor optoelectronic structure with increased light extraction efficiency and a fabrication method thereof are presented. The semiconductor optoelectronic structure includes continuous grooves formed under an active layer of the semiconductor optoelectronic structure to reflect light from the active layer and thereby direct more light through a light output surface so as to increase the light intensity from the semiconductor optoelectronic structure.01-20-2011
20110012154LED ELEMENT AND METHOD FOR MANUFACTURING LED ELEMENT - Provided is a GaN-based LED element having a novel structure for improving output by increasing light extraction efficiency. A GaN-based LED element comprising: a semiconductor laminated structure in which an n-type GaN-based semiconductor layer is arranged on the side of a lower surface of a p-type GaN-based semiconductor layer having an upper surface and the lower surface, and a light emitting part comprising a GaN-based semiconductor is interposed between the layers; a p-side electrode formed on the upper surface of the p-type GaN-based semiconductor layer; and an n-side electrode electrically connected to the n-type GaN-based semiconductor layer, wherein the p-side electrode comprises a transparent conductive film comprising a window region serving as a window for extracting light generated in the light emitting part, and a flat section and a rough surface section formed by a roughening treatment are arranged to form a predetermined mixed pattern on the upper surface of the p-type GaN-based semiconductor layer covered with the window region of the transparent conductive film.01-20-2011
20110012152LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE HAVING THE SAME - Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a light emitting structure that includes a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer, a first electrode including at least one arm shape and contacted with a portion of the first conductive type semiconductor layer, an insulating layer covering the first electrode, and a second electrode including on at least one arm shape, wherein the second electrode disposes on at least one of the insulating layer and the second conductive type semiconductor layer.01-20-2011
20110012151LIGHT EMITTING DEVICE - A light emitting device includes: a mounting member including a recess; a light emitting element provided in the recess and made of a semiconductor; an electrostatic discharge protection element provided in the recess and connected parallel to the light emitting element; and a translucent resin layer mixed with a filler capable of reflecting emitted light from the light emitting element, covering the electrostatic discharge protection element and not covering the light emitting element.01-20-2011
20110012150LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME - A light-emitting device comprises a second conductive type semiconductor layer, an active layer on the second conductive type semiconductor layer, a first conductive type semiconductor layer on the active layer, and a nonconductive semiconductor layer on the first conductive type semiconductor layer, the nonconductive semiconductor layer comprising a light extraction structure.01-20-2011
20110012149REFLECTIVE SUBSTRATEFOR LEDS - An underfill formation technique for LEDs molds a reflective underfill material to encapsulate LED dies mounted on a submount wafer while forming a reflective layer of the underfill material over the submount wafer. The underfill material is then hardened, such as by curing. The cured underfill material over the top of the LED dies is removed using microbead blasting while leaving the reflective layer over the submount surface. The exposed growth substrate is then removed from all the LED dies, and a phosphor layer is molded over the exposed LED surface. A lens is then molded over the LEDs and over a portion of the reflective layer. The submount wafer is then singulated. The reflective layer increases the efficiency of the LED device by reducing light absorption by the submount without any additional processing steps.01-20-2011
20110012148LIGHTING DEVICE WITH LIGHT SOURCES POSITIONED NEAR THE BOTTOM SURFACE OF A WAVEGUIDE - A device according to embodiments of the invention includes a waveguide, typically formed from a first section of transparent material. A light source is disposed proximate a bottom surface of the waveguide. The light source comprises a semiconductor light emitting diode and a second section of transparent material disposed between the semiconductor light emitting diode and the waveguide. Sidewalls of the second section of transparent material are reflective. A surface to be illuminated is disposed proximate a top surface of the waveguide. In some embodiments, an edge of the waveguide is curved.01-20-2011
20110012147WAVELENGTH-CONVERTED SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING A FILTER AND A SCATTERING STRUCTURE - A semiconductor structure comprises a light emitting layer disposed between an n-type region and a p-type region. A wavelength converting material is disposed over the semiconductor structure. The wavelength converting material is configured to absorb light emitted by the semiconductor structure and emit light of a different wavelength. A filter configured to reflect blue ambient light is disposed over the wavelength converting material. A scattering structure is disposed over the wavelength converting layer. The scattering structure is configured to scatter light. In some embodiments, the scattering structure is a transparent material having a rough surface, containing non-wavelength-converting particles that appear substantially white in ambient light, or including both a rough surface and white particles.01-20-2011
20100123152Light-Emitting Element, Light-Emitting Device, Electronic Device, and Lighting Device - Provided is a light-emitting element including an anode over a substrate, a layer containing a composite material in which a metal oxide is added to an organic compound, a light-emitting layer, and a cathode having a light-transmitting property. The anode is a stack of a film of an aluminum alloy and a film containing titanium or titanium oxide. The film containing titanium or titanium oxide is in contact with the layer containing a composite material.05-20-2010
20130161674SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME - A semiconductor light emitting element includes a stacked body, a metal reflection layer and a metal pad portion. The stacked body is made of In06-27-2013
20130161670LIGHT EMITTING DIODE PACKAGES AND METHODS OF MAKING - Light emitting, diode (LED) packages and processes with improved heat dissipation. In certain embodiments, only metal solder resides in the space between the leadframe and the circuit board, providing good heat conduction from the LED chip to the circuit board. In certain embodiments, sidewalls of the leadframe are tilted to provide improved light emission.06-27-2013
20090236624Organic light emitting device and organic light emitting display apparatus comprising the same - An organic light emitting device includes an anode electrode having an improved characteristic. The organic light emitting device is constructed with a first electrode including indium tungsten oxide (IWO) so that the anode electrode can be readily patterned, an organic light emitting layer formed on the first electrode, and a second electrode formed on the organic light emitting layer. An organic light emitting display apparatus may be constructed with the organic light emitting device.09-24-2009
20090236623Light emitting diode device - A light emitting diode device includes a substrate, a reflector cup, a light emitting diode chip, and a phosphor paste. The reflector cup is set on the substrate, and has a wall of a first length and a first height wherein the first length is defined by a corresponding inner edge thereof. The LED chip is mounted on the substrate, and comprises a second length and a second height. The phosphor paste covers on the LED chip. The first height of the wall and the second height of the LED chip has a first ratio, and the first length of the wall and the second length of the LED chip has a second ratio wherein the first ratio is larger than the second ratio.09-24-2009
20090236622White Semiconductor Light Emitting Device and Method for Manufacturing the Same - An LED chip (09-24-2009
20090039367LIGHT EMITTING DIODES WITH A P-TYPE SURFACE BONDED TO A TRANSPARENT SUBMOUNT TO INCREASE LIGHT EXTRACTION EFFICIENCY - An (Al,Ga,In)N-based light emitting diode (LED), comprising a p-type surface of the LED bonded with a transparent submount material to increase light extraction at the p-type surface, wherein the LED is a substrateless membrane.02-12-2009
20130113012SEMICONDUCTOR LIGHT-EMITTING ELEMENT, LAMP, ELECTRONIC DEVICE AND MACHINE - A semiconductor light-emitting element (05-09-2013
20130069099CHIP-ON-BOARD LED STRUCTURE - A chip-on-board (COB) LED structure includes a ceramic substrate, a thermally radiative heat dissipation film, a thermally conductive binding layer, an LED chip, a nano-enamel layer, a circuit layer, a plurality of electrical connection lines, a fluorescent glue and a package resin. The LED chip is bound to the thermally radiative heat dissipation film formed on the ceramic substrate by the thermally conductive binding layer, the nano-enamel layer encloses the thermally radiative heat dissipation film for electrical insulation and protection, and the circuit layer has a circuit pattern formed on the nano-enamel layer. The electrical connection lines are configured to electrically connect the LED chip to the circuit layer, the fluorescent glue is coated on the LED chip to provide the effect of fluorescence, and the package resin encloses the circuit layer, the electrical connection lines, the nano-enamel layer and the fluorescent glue.03-21-2013
20130069098LIGHT EMITTING DEVICE - According to one embodiment, a light emitting device includes a semiconductor light emitting element to emit a first light, a mounting member, first and second wavelength conversion layers and a transparent layer. The first wavelength conversion layer is provided between the element and the mounting member in contact with the mounting member. The first wavelength conversion layer absorbs the first light and emits a second light having a wavelength longer than a wavelength of the first light. The semiconductor light emitting element is disposed between the second wavelength conversion layer and the first wavelength conversion layer. The second wavelength conversion layer absorbs the first light and emits a third light having a wavelength longer than the wavelength of the first light. The transparent layer is provided between the element and the second wavelength conversion layer. The transparent layer is transparent to the first, second, and third lights.03-21-2013
20130069097TOP GATE TYPE THIN-FILM TRANSISTOR, DISPLAY DEVICE, AND ELECTRONIC APPARATUS - The present invention provides a thin-film transistor manufactured on a transparent substrate having a structure of a top gate type crystalline silicon thin-film transistor in which a light blocking film, a base layer, a crystalline silicon film, a gate insulating film, and a gate electrode film arranged not to overlap at least a channel region are sequentially formed on the transparent substrate; wherein the channel region having channel length L, LDD regions having LDD length d on both sides of the channel region, a source region, and a drain region are formed in the crystalline silicon film; the light blocking film is divided across the channel region; and interval x between the divided light blocking films is equal to or larger than channel length L and equal to or smaller than a sum of channel length L and a double of LDD length d (L+2d). Thereby, the cost for manufacturing the thin-film transistor is low, and the photo leak current of the thin-film transistor is suppressed.03-21-2013
20130069096LIGHT EMITTING DEVICE AND LIGHT-EMITTING SYSTEM INCLUDING THE SAME - A light-emitting device having improved light conversion efficiency, a light-emitting system including the same, and fabricating methods of the light-emitting device and the light-emitting system, are provided. The light-emitting device includes one or more light-emitting elements arranged on one surface of a substrate, and a phosphor layer disposed inside or on the substrate to a predetermined thickness and partially wavelength-converts the light emitted from the one or more light-emitting elements into light having different wavelength, wherein a light conversion efficiency of the phosphor layer is maximized when the phosphor layer has the predetermined thickness.03-21-2013
20130069095SEMICONDUCTOR LIGHT-EMITTING ELEMENT - A semiconductor light-emitting element (03-21-2013
20130069094PACKAGE STRUCTURE OF SEMICONDUCTOR LIGHT EMITTING ELEMENT - A package structure of semiconductor light emitting element is provided. The package structure of semiconductor light emitting element includes a substrate, a light emitting element and a transparent conductive board. A first electrode and a second electrode are disposed on the substrate. The light emitting element is disposed on the substrate and between the first electrode and the second electrode. A first bonding pad and a second bonding pad are disposed on the light emitting element. The transparent conductive board has a first surface and a second surface opposite to the first surface. The second surface of the transparent conductive board is located over the light emitting element for electrically connecting the first electrode and the first bonding pad and electrically connecting the second electrode and the second bonding pad.03-21-2013
20130069093OPTOELECTRONIC DEVICE HAVING CONDUCTIVE SUBSTRATE - An optoelectronic device includes a conductive substrate; a polymer filled groove configured to separate the conductive substrate into a first semiconductor substrate and a second semiconductor substrate; a first front side electrode on the first semiconductor substrate and a second front side electrode on the second semiconductor substrate; and a light emitting diode (LED) chip on the first semiconductor substrate in electrical communication with the first front side electrode and with the second front side electrode.03-21-2013
20130069092LIGHT-EMITTING DIODE AND METHOD MANUFACTURING THE SAME - An LED includes a base, first and second electrodes embedded in the base, and an LED chip electrically connected with the first and second electrodes. The first electrode includes a first main body portion and three first branch portions. The second electrode includes a second main body and three second branch portions. The first and second branch portions are exposed at sidewalls of the base. One of the first branch portions and one of the second branch portions are exposed at two opposite lateral sides of the base respectively, and another one of the first branch portions and another one of the second branch portions are exposed at the same lateral side of the base. This disclosure also discloses a manufacture method for making the LED.03-21-2013
20130069091PROGRESSIVE-REFRACTIVITY ANTIREFLECTION LAYER AND METHOD FOR FABRICATING THE SAME - The present invention discloses a progressive-refractivity antireflection layer and a method for fabricating the same to eliminate light reflection occurring in an interface. The present invention is characterized in being fabricated via depositing a first material and a second material, and having a refractivity (n03-21-2013
20090026479OPTICAL WAVEGUIDE DEVICE AND MANUFACTURING METHOD THEREOF - An optical waveguide device including a substrate; a light emitting element provided on a light emitting element provision region of an upper surface of the substrate; an under-cladding layer provided on a portion of the upper surface of the substrate except for the light emitting element provision region; and a core covering the light emitting element and the under-cladding layer on the substrate, and serving as a path of light emitted from the light emitting element. An optical waveguide device manufacturing method including the steps of: forming an under-cladding layer on a portion of an upper surface of a substrate except for the light emitting element provision region; placing a light emitting element on the light emitting element provision region; and forming a core on the resultant substrate to cover the light emitting element and the under-cladding layer.01-29-2009
20090026471LIGHT-SCATTERING STRUCTURE, LIGHT EMITTING DEVICE COMPRISING THE SAME AND METHOD OF FORMING THE SAME - A light-scattering structure with micron-scale or submicron-scale protruding portions is provided to improve the light extraction efficiency of light emitting devices. The protruding portions function as scattering sites and can be assembled closely. A method of forming a light-scattering structure is also provided, wherein all the conventional substrate materials can be used for the substrate of the light-scattering structure, and scattering sites of submicron-scale, micron-scale or larger size can be fabricated.01-29-2009
20090008669Package for micromirror device - The present invention discloses a mirror device that includes a mirror element which further comprising an elastic hinge and a mirror and which modulates incident light emitted from a light source, a device substrate on which a drive circuit for driving the mirror element is placed, a package substrate which is made of transparent glass or a silicon material and on which the device substrate is placed, a metallic thermal transfer path connected to the device substrate, and a cover glass connected to the package substrate so that the device substrate is covered.01-08-2009
20090008668Semiconductor Light Emitting Device and Method for Fabricating the Same - A semiconductor light emitting device, which includes: a first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer; a semiconductor light emitting portion having a light emitting layer which is disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer; a first conductivity-type semiconductor side electrode connected to the first conductivity-type semiconductor layer; and a second conductivity-type semiconductor side electrode connected to the second conductivity-type semiconductor layer, wherein the second conductivity-type semiconductor side electrode is disposed separated from an insulator film covering the semiconductor light emitting portion by a separation area.01-08-2009
20090008667METHOD FOR FORMING PATTERN, METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE, AND LIGHT EMITTING DEVICE - Oxidation treatment is performed to the surface of a substrate provided with a photocatalytic conductive film and an insulating film; treatment with a silane coupling agent is performed, so that a silane coupling agent film is formed and the surface of the substrate is modified to be liquid-repellent; and the surface of the substrate is irradiated with light of a wavelength (less than to equal to 390 nm) which has energy of greater than or equal to a band gap of a material for forming the photocatalytic conductive film, so that only the silane coupling agent film over the surface of the photocatalytic conductive film is decomposed and the surface of the photocatalytic conductive film can be modified to be lyophilic.01-08-2009
20090008666OPTICAL SEMICONDUCTOR DEVICE - A semiconductor light-emitting element is disposed in a depression of a container. A first fluorescent material layer is located in the depression. At least a portion of the first fluorescent material layer is provided between the opening of the depression and the semiconductor light-emitting element. A second fluorescent material layer having first and second portions is disposed in the depression. The first portion is provided between the bottom of the depression and the semiconductor light-emitting element. The second portion is provided between the side surface of the depression and the semiconductor light-emitting element. The first and second fluorescent material layers are excited by the light radiated from the semiconductor light-emitting element to emit a light having a first wavelength longer than the emission wavelength of the semiconductor light-emitting element and another light having a second wavelength longer than the first wavelength respectively.01-08-2009
20090008663PHOSPHOR AND METHOD FOR PRODUCTION THEREOF, AND APPLICATION THEREOF - A phosphor containing a crystal phase having a chemical composition expressed by the following general formula [1], and exhibiting an average variation rate of the emission intensity of 1.3 or less upon excitation with light having a peak in the wavelength range of 420 nm to 480 nm, the variation rate of the emission intensity being calculated by the following general formula [2].01-08-2009
20110220949LIGHT EMITTING DEVICE PACKAGE - A light emitting device package is provided. The light emitting device package comprises a package body comprising a first cavity, and a second cavity connected to the first cavity; a first lead electrode, at least a portion of which is disposed within the second cavity; a second lead electrode, at least a portion of which is disposed within the first cavity; a light emitting device disposed within the second cavity; a first wire disposed within the second cavity, the first wire electrically connecting the light emitting device to the first lead electrode; and a second wire electrically connecting the light emitting device to the second lead electrode.09-15-2011
20080303048Semiconductor light emitting device - This invention discloses a light emitting semiconductor device including a light-emitting structure and an external optical element. The optical element couples to the light-emitting structure circumferentially. In addition, the refractive index of the external optical element is greater than or about the same as that of a transparent substrate of the light-emitting structure, or in-between that of the transparent substrate and the encapsulant material.12-11-2008
20080303043SEMICONDUCTOR LIGHT EMITTING DEVICE - At least one recess and/or protruding portion is created on the surface portion of a substrate for scattering or diffracting light generated in a light emitting region. The recess and/or protruding portion has a shape that prevents crystal defects from occurring in semiconductor layers.12-11-2008
20080296599LED Package with Stepped Aperture - A light emitting diode (LED) package for high temperature operation which includes a printed wire board and a heat sink. The LED package may include a formed heat sink layer, which may be thermally coupled to an external heat sink. The printed wire board may include apertures that correspond to the heat sink such that the heat sink is integrated with the printed wire board layer. The LED package may include castellations for mounting the package on a secondary component such as a printed wire board. The LED package may further comprise an isolator disposed between a base metal layer and one or more LED die. Optionally, the LED die may be mounted directly on a base metal layer. The LED package may include a PWB assembly having a stepped cavity, in which one or more LED die are disposed. The LED package is advantageously laminated together using a pre-punched pre-preg material or a pressure sensitive adhesive.12-04-2008
20120235204SEMICONDUCTOR LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE USING SEMICONDUCTOR LIGHT EMITTING ELEMENT, AND ELECTRONIC APPARATUS - Disclosed is a semiconductor light emitting element (09-20-2012
20120235203METHOD FOR PRODUCING NANOPARTICLES - Some embodiments disclosed herein are related to methods of preparing a nanoparticle composition comprising: providing an aerosol comprising a plurality of droplets of a precursor solution comprising at least one nanoparticle precursor and an expansive component; passing the aerosol through a plasma; and collecting a nanoparticle composition product from the carrier gas which has exited the plasma. Some embodiments relate to nanoparticle compositions provided by this process. Some embodiments relate to light-emitting diodes or light emitting devices comprising these compositions.09-20-2012
20120235202Light Emitting Device and Method of Manufacturing a Light Emitting Device - A light emitting device comprising a heat sink, a dielectric layer arranged on the heat sink, a heat conductive layer arranged on the dielectric layer, an undercoating arranged on at least a part of the heat conductive layer, and a light emitting chip attached to the heat conductive layer by means of the undercoating.09-20-2012
20120235201SYSTEM AND METHOD FOR LED PACKAGING - System and method for LED packaging. The present invention is directed to optical devices. More specifically, embodiments of the presentation provide LED packaging having one or more reflector surfaces. In certain embodiments, the present invention provides LED packages that include thermal pad structures for dissipating heat generated by LED devices. In particular, thermal pad structures with large surface areas are used to allow heat to transfer. In certain embodiments, thick thermally conductive material is used to improve overall thermal conductivity of an LED package, thereby allowing heat generated by LED devices to dissipate quickly. Depending on the application, thermal pad structure, thick thermal conductive layer, and reflective surface may be individually adapted in LED packages or used in combinations. There are other embodiments as well.09-20-2012
20120235200LED DEVICE HAVING A DOME LENS - A light emitting device comprises an LED die, a dome lens encapsulating the LED die, the dome lens having a first outer curved surface, and a photopolymerizable composition disposed on the dome lens. The photopolymerizable composition forms a meniscus lens defined by a second outer curved surface and an inner curved surface, the inner curved surface being in contact with only a portion of the first outer curved surface. The dome lens and the meniscus lens in combination form an elongated dome lens.09-20-2012
20120235199POWER SURFACE MOUNT LIGHT EMITTING DIE PACKAGE - A light emitting die package is provided which includes a metal substrate having a first surface and a first conductive lead on the first surface. The first conductive lead is insulated from the substrate by an insulating film. The first conductive lead forms a mounting pad for mounting a light emitting device. The package includes a metal lead electrically connected to the first conductive lead and extending away from the first surface.09-20-2012
20120235198LIGHT EMITTING DIODE PACKAGE STRUCTURE - The invention provides a light emitting diode package structure, including: a light emitting diode chip formed on a substrate; a composite coating layer formed on the light emitting diode chip, wherein the composite coating layer comprises a first coating layer and a second coating layer, and the composite coating layer has a reflectivity greater than 95% at the wavelength of 500-800 nm; a cup body formed on the substrate, wherein the cup body surrounds the light emitting diode chip; and an encapsulation housing covering the light emitting diode chip, wherein the encapsulation housing comprises a wavelength transformation material.09-20-2012
20120235197ORGANIC EL DEVICE - An organic EL device includes a substrate, a first electrode layer arranged on the substrate, an organic EL layer arranged on the first electrode layer, an optical property adjusting layer arranged on the organic EL layer, and a second electrode layer arranged on the optical property adjusting layer.09-20-2012
20120235196LIGHT EMITTING DEVICE AND PROJECTOR - A light emitting device includes a first layer that generates light by injection current and forms a waveguide for the light, and an electrode that injects the current into the first layer, wherein the waveguide of the light has a first region, a second region, a third region, and a fourth region, the first region and the second region are connected at a first reflection part, the first region and the third region are connected at a second reflection part, the second region and the third region are tilted at the same angle and connected to an output surface, a distance between the fourth region and at least one of the first region, the second region, and the third region is a distance that produces evanescent coupling, and the fourth region forms a resonator.09-20-2012
20120235195LEDS WITH EFFICIENT ELECTRODE STRUCTURES - Aspects include electrodes that provide specified reflectivity attributes for light generated from an active region of a Light Emitting Diode (LED). LEDs that incorporate such electrode aspects. Other aspects include methods for forming such electrodes, LEDs including such electrodes, and structures including such LEDs.09-20-2012
20120235194LIGHT EMITTING DIODE PACKAGE - An LED package includes an insulated frame, a first metallic conductor and a second metallic conductor, a chip and an encapsulation. The insulated frame has a receiving groove defined therein. The two metallic conductors are both mounted on bottom of the insulated frame and separated from each other. The chip is placed in the receiving groove and electrically connected to the two metallic conductors. The encapsulation is located in the receiving groove. The first metallic conductor and the second metallic conductor each comprise a mounting portion exposed to the receiving groove and a reflecting portion extending from the mounting portion into the insulated frame. The first reflecting portion and the second reflecting portion cooperatively surround the receiving groove of the insulated frame.09-20-2012
20120235193LED PACKAGE - An LED package comprises a substrate, a reflector, a light-absorbing layer, an encapsulation layer and an LED chip. The light-absorbing layer is located around the reflector and is able to absorb any light which penetrates through the reflector. Therefore, any vignetting or halation of light from the LED package is prevented. Moreover, the LED package can be constructed on a very small scale with no reduction in its color rendering properties.09-20-2012
20120235192LIGHT EMITTING DIODE PACKAGE - A light emitting diode package comprises a light emitting diode chip, a first luminescent conversion layer and a separate second luminescent conversion layer on the first luminescent conversion layer. The first luminescent conversion layer has a first luminescent conversion element surrounding the light emitting diode chip. The second luminescent conversion layer has a second luminescent conversion element located above the light emitting diode chip. An excitation efficiency of the first luminescent conversion element is higher than that of the second luminescent conversion element.09-20-2012
20130161677INTEGRATED POLARIZED LIGHT EMITTING DIODE WITH A BUILT-IN ROTATOR - The invention is directed to an integrated polarized light emitting diode device that has a light emitting diode, a metal grating, an oxide layer, and a built-in photonic crystal rotator. Additional teachings include a method for making the integrated polarized light emitting diode, a method for improving the polarization selectivity and energy efficiency of a light emitting diode, and a method for rotating polarization of a light emitting diode.06-27-2013
20130161678SURFACE-TREATED FLUORESCENT MATERIAL AND PROCESS FOR PRODUCING SURFACE-TREATED FLUORESCENT MATERIAL - Provided are a surface treated phosphor having high dispersibility and remarkably improved moisture resistance without degradation in fluorescence properties, and a method of producing the surface treated phosphor.06-27-2013
20130161679ELECTROLUMINESCENT ELEMENT, ELECTROLUMINESCENT ELEMENT MANUFACTURING METHOD, DISPLAY DEVICE, AND ILLUMINATION DEVICE - An electroluminescent element (06-27-2013
20110018023ORGANIC ELECTROLUMINESCENCE ELEMENT, LIGHTING DEVICE, AND DISPLAY DEVICE - An object of the present invention is to provide an organic EL element having high light extraction efficiency and to provide a lighting device and a display device provided using the organic EL element. The organic EL element 01-27-2011
20120267668SEMICONDUCTOR LIGHT EMITTING DEVICE WITH LIGHT EXTRACTION STRUCTURES - Structures are incorporated into a semiconductor light emitting device which may increase the extraction of light emitted at glancing incidence angles. In some embodiments, the device includes a low index material that directs light away from the metal contacts by total internal reflection. In some embodiments, the device includes extraction features such as cavities in the semiconductor structure which may extract glancing angle light directly, or direct the glancing angle light into smaller incidence angles which are more easily extracted from the device.10-25-2012
20120267660ORGANIC LIGHT EMITTING DIODE DISPLAY - An organic light emitting diode (OLED) display includes: a display substrate; an organic light emitting element formed over the display substrate; a thin film encapsulation layer formed over the display substrate to cover the organic light emitting element; an encapsulation member facing the display substrate with the organic light emitting element and the thin film encapsulation layer therebetween; a sealant surrounding the organic light emitting element and the thin film encapsulation layer disposed between the display substrate and the encapsulation member, and bonding the display substrate and the encapsulation member; and a light control member disposed between the encapsulation member and the thin film encapsulation layer.10-25-2012
20120267656LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A method of fabricating a light emitting device comprising: providing a substrate; forming an epitaxial stack on the substrate wherein the epitaxial stack comprising a first conductivity semiconductor layer, an active layer and a second conductivity semiconductor layer; forming a mesa on the epitaxial stack to expose partial of the first conductivity semiconductor layer; layer and etching the surface of the first conductivity semiconductor layer and forming a least one rough structure on the surface of the first conductivity semiconductor layer wherein the first conductivity semiconductor layer is sandwiched by the substrate and the active layer.10-25-2012
20110042705SEMICONDUCTOR LIGHT EMITTING DIODES INCLUDING MULTIPLE BOND PADS ON A SINGLE SEMICONDUCTOR DIE - A light emitting device includes a single semiconductor die light emitting diode and at least five bond pads on the single semiconductor die. The bond pads may be in the four corners and at least one midpoint of the single semiconductor die. A wavelength conversion layer may be provided and bond pad extensions may extend through the wavelength conversion layer. Multiple wire bond connections may also be provided.02-24-2011
20110006322WAFER-LEVEL PACKAGE STRUCTURE OF LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF - A wafer-level package structure of a light emitting diode and a manufacturing method thereof, and the package structure includes: a die including a first side and a second side opposite to the first side; a first insulating layer on the first side of the die; at least two wires which are arranged on the insulating layer and electrically isolated from each other; bumps which are arranged on the wires and adapted to be electrically connected correspondingly with electrodes of a bare chip of the light emitting diode; at least two discrete lead areas on the second side of the die; and leads in the lead areas, electrically isolated from each other and electrically connected correspondingly with the wires. The invention forms the leads on the second side of the substrate to extract the electrodes of the light emitting diode, that is, the light emitting diode and the leads thereof are located on the two opposite sides of the substrate in the technical solution of the invention, to thereby reduce the area required for the substrate; and the electrodes can be extracted in the subsequent structure of the package without gold wiring to thereby further reduce the volume of the package.01-13-2011
20090108279LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A light emitting device having a light extraction structure, which is capable of achieving an enhancement in light extraction efficiency and reliability, and a method for manufacturing the same. The light emitting device includes a semiconductor layer having a multi-layered structure including a light emission layer; and a light extraction structure formed on the semiconductor layer in a pattern having unit structures. Further, the wall of each of the unit structures is sloped at an angle of −45° to +45° from a virtual vertical line being parallel to a main light emitting direction of the light emitting device.04-30-2009
20100163902LIGHT EMITTING DEVICE - Disclosed is a light emitting device. The light emitting device includes a light emitting structure comprising an active layer to generate first light, a first conductive semiconductor layer on the active layer, and a second conductive semiconductor layer on the active layer so that the active layer is disposed between the first and second conductive semiconductor layers, wherein a portion of the light emitting structure is implanted with at least one element which generates second light from the first light.07-01-2010
20090065793LIGHT EMITTING DEVICE - A light emitting device is disclosed herein. An embodiment of the light emitting device comprises a substrate and a reflector extending from the substrate. The reflector forms a cavity in conjunction with the substrate. A light emitter is located in the cavity. At least one first recessed portion is located in the reflector, the at least one first recessed portion extends substantially axially around the reflector.03-12-2009
20110140148OPTICAL DEVICE FOR SEMICONDUCTOR BASED LAMP - This invention discloses an optical device for a semiconductor based lamp, the optical device comprising a base for mounting a semiconductor based light-emitting device thereon, a transparent body encapsulating the semiconductor based light-emitting device, and a reflective surface covering a predetermined region on a top of the transparent body, the reflective surface having an opening exposing the transparent body, wherein light emitted from the semiconductor based light-emitting device transmits through the opening of the reflective surface.06-16-2011
20100072502LIGHT-EMITTING DIODE - A light-emitting diode includes a circuit board, a pair of electrodes provided on the circuit board, at least one light-emitting diode element electrically connected to the pair of electrodes, a central electrode for heat-dissipation, provided between the pair of electrodes on the circuit board, and a heat-dissipation plate disposed on the central electrode for heat-dissipation and including a reflection surface. The central electrode for heat-dissipation includes an upper central electrode disposed on the upper surface of the circuit board and a lower central electrode disposed on the lower surface of the circuit board and the upper central electrode thermally connected to the lower central electrode.03-25-2010
20100264444LED AND METHOD OF MANUFACTURING THE SAME - An LED can include a pair of electrode members, and an LED chip joined to a chip mount portion disposed at the extremity of one of the pair of electrode members. The LED chip can be electrically connected to the pair of electrode members. A transparent resin portion can include a wavelength conversion material mixed therein, the transparent resin portion formed in such a manner as to surround the LED chip, wherein the LED chip is positioned offset toward one side in the transparent resin portion, and wherein the wavelength conversion material mixed in the transparent resin portion has a higher density around the LED chip within the transparent resin portion.10-21-2010
20120305969REFLECTING MATERIAL AND LIGHT EMITTING DIODE DEVICE - A reflecting material contains a silicone resin composition prepared from a polysiloxane containing silanol groups at both ends, an ethylenic silicon compound, a silicon compound containing an epoxy group, an organohydrogenpolysiloxane, a condensation catalyst, and an addition catalyst; and a light reflecting component.12-06-2012
20120112229LIGHT EMITTING DEVICE PACKAGE AND METHOD OF MANUFACTURING THE SAME - A light emitting device package includes: first and second electrodes, at least a portion of a lower surface thereof being exposed; a light emitting device disposed on an upper surface of at least one of the first and second electrodes; a reflection wall disposed on the upper surface of the first and second electrodes and surrounding the light emitting device to form a mounting part therein; and a fluorescent film disposed on the reflection wall to cover an upper portion of the mounting part. The mounting part is filled with air.05-10-2012
20120205701Light-Emitting Element, Display Device, Lighting Device, and Method for Manufacturing the Same - A light-emitting element disclosed includes a first electrode layer; a second electrode layer which transmits light; and a light-emitting layer interposed between the first electrode layer and the second electrode layer. The first electrode layer includes a first conductive layer which is able to reflect light, a second conductive layer provided over the first conductive layer and including titanium, and a third conductive layer which transmits light and contains a metal oxide having work function higher than that of a material of the first conductive layer.08-16-2012
20120126272LIGHT-EMITTING ELEMENT AND DISPLAY DEVICE USING SAME - A light-emitting element that has an improved light-extraction efficiency and an improved color purity of an emitted light. A light-emitting element includes a reflective electrode, a transparent electrode, a light-emitting layer, a functional layer, and a color filter. An optical film thickness of the functional layer is from approximately 218 nm to approximately 238 nm for a light emitting element that emits a blue light. An optical film thickness of the functional layer is from approximately 384 nm to approximately 400 nm for a light emitting element that emits a red light.05-24-2012
20120217523LIGHT EMITTING DIODE PACKAGING STRUCTURE - A light emitting diode (LED) packaging structure comprises a base, a LED chip and a packaging colloid. The LED chip is disposed in the base. The packaging colloid comprises a first optical resin material and at least one second optical resin material. The first optical resin material is transparent and packages the LED chip. The second optical resin material is disposed to a side of the first optical resin material. The second optical resin material is doped with a second fluorescent-powder. By disposing multilayered second optical resin materials, the fluorescent-powder is far from the LED chip to prevent the fluorescent-powder from being heated to cause light attenuation, thereby extending the service life of the LED chip.08-30-2012
20120299044LIGHTING SET, LIGHTING DEVICE, AND DISPLAY DEVICE - Disclosed are: a lighting device that stably supplies high-quality surface light; a lighting set that is one part of the lighting device; and a display device equipped with the lighting device. In an LED package (PG), supporting sections (11-29-2012
20120091495LIGHT REFLECTING SUBSTRATE AND PROCESS FOR MANUFACTURE THEREOF - A light reflecting substrate comprises at least: an insulating layer and a metal layer disposed in contact with the insulating layer. The total reflectivity of light in the wavelength range of more than 320 nm and not more than 700 nm is not less than 50% and the total reflectivity of light in the wavelength range of 300 nm to 320 nm is not less than 60%. The light reflecting substrate further improves the emission power of the light-emitting device when used as the substrate therefor.04-19-2012
20110309394LED AND METHOD OF MANUFACTURING THE SAME - An exemplary LED includes an epitaxial layer, an electrically conductive base, a transparent, electrically-conducting layer and a metallic pad. The epitaxial layer includes an N-type layer, a P-type layer and a light-emitting quantum-well layer between the N-type layer and P-type layer. The electrically conductive base is coupled to the P-type layer. The transparent, electrically-conducting layer is coupled to the N-type layer. The metallic pad is disposed on the transparent, electrically-conducting layer.12-22-2011
20100207139PHOTONIC MATERIAL HAVING REGULARLY ARRANGED CAVITIES - The invention relates to photonic materials having regularly arranged cavities containing at least one colorant, where the wall material of the photonic material has dielectric properties and as such is essentially non-absorbent for the wavelength of an absorption band of the respective colorant and is essentially transparent for the wavelength of a colorant emission which can be stimulated by the absorption wavelength, and the cavities are shaped in such a way that radiation having the wavelength of the weak absorption band of the colorant is stored in the photonic material, to the use thereof as phosphor system in an illuminant, to corresponding illuminants and production processes.08-19-2010
20110278624SUBSTRATE FOR AN OPTICAL DEVICE, AN OPTICAL DEVICE PACKAGE COMPRISING THE SAME AND A PRODUCTION METHOD FOR THE SAME - The present invention relates to a substrate for an optical device, to an optical device package comprising the same and to a production method for the same. According to the present invention, the substrate for an optical device, the optical device package comprising the same and the production method for the same may comprise: a metal substrate; a first anodized layer which is formed on the top surface of the metal substrate and insulates the metal substrate; and a first and a second electrode formed insulated from each other on the top of the first anodized layer.11-17-2011
20110278628GaN COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME - The present invention relates to a gallium nitride (GaN) compound semiconductor light emitting element (LED) and a method of manufacturing the same. The present invention provides a vertical GaN LED capable of improving the characteristics of a horizontal LED by means of a metallic protective film layer and a metallic support layer. According to the present invention, a thick metallic protective film layer with a thickness of at least 10 microns is formed on the lateral and/or bottom sides of the vertical GaN LED to protect the element against external impact and to easily separate the chip. Further, a metallic substrate is used instead of a sapphire substrate to efficiently release the generated heat to the outside when the element is operated, so that the LED can be suitable for a high-power application and an element having improved optical output characteristics can also be manufactured. A metallic support layer is formed to protect the element from being distorted or damaged due to impact. Furthermore, a P-type electrode is partially formed on a P-GaN layer in a mesh form to thereby maximize the emission of photons generated in the active layer toward the N-GaN layer.11-17-2011
20110278627LIGHT EMITTING DEVICE PACKAGE AND METHOD FOR MANUFACTURING THE SAME - A light emitting device package capable of achieving an enhancement in light emission efficiency and a reduction in thermal resistance, and a method for manufacturing the same are disclosed. The method includes forming a mounting hole in a first substrate, forming through holes in a second substrate, forming a metal film in the through holes, forming at least one pair of metal layers on upper and lower surfaces of the second substrate such that the metal layers are electrically connected to the metal film, bonding the first substrate to the second substrate, and mounting at least one light emitting device in the mounting hole such that the light emitting device is electrically connected to the metal layers formed on the upper surface of the second substrate.11-17-2011
20110278626LIGHT EMITTING DEVICE PACKAGE AND METHOD FOR MANUFACTURING THE SAME - A light emitting device package capable of achieving an enhancement in light emission efficiency and a reduction in thermal resistance, and a method for manufacturing the same are disclosed. The method includes forming a mounting hole in a first substrate, forming through holes in a second substrate, forming a metal film in the through holes, forming at least one pair of metal layers on upper and lower surfaces of the second substrate such that the metal layers are electrically connected to the metal film, bonding the first substrate to the second substrate, and mounting at least one light emitting device in the mounting hole such that the light emitting device is electrically connected to the metal layers formed on the upper surface of the second substrate.11-17-2011
20110278625LIGHT-EMITTING ELEMENT - Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a second electrode layer, a light emitting semiconductor layer including a second conductive semiconductor layer, an active layer, and a first conductive semiconductor layer on the second electrode layer, a reflective member spaced apart from the light emitting semiconductor layer on the second electrode layer, and a first electrode layer on the first conductive semiconductor layer.11-17-2011
20110278620THIN FILM LIGHT EMITTING DIODE - Light emitting LEDs devices comprised of LED chips that emit light at a first wavelength, and a thin film layer over the LED chip that changes the color of the emitted light. For example, a blue LED chip can be used to produce white light. The thin film layer beneficially consists of a florescent material, such as a phosphor, and/or includes tin. The thin film layer is beneficially deposited using chemical vapor deposition.11-17-2011
20110278622Glass for scattering layer of organic LED device and organic LED device - A glass to be used in a scattering layer of an organic LED element, and an organic LED element using the scattering layer are provided. The organic LED element of the present invention includes, a transparent substrate, a first electrode provided on the transparent electrode, an organic layer provided on the first electrode, and a second electrode provided on the organic layer, and further includes a scattering layer including, in terms of mol % on the basis of oxides, 15 to 30% of P11-17-2011
20110278621RADIATION-EMITTING COMPONENT AND METHOD FOR ITS MANUFACTURE - A radiation-emitting component includes a carrier, a semi-conductor chip arranged on the carrier, wherein the semi-conductor chip includes an active layer to generate electromagnetic radiation and a radiation exit surface, a first and a second contact structure for the electrical contacting of the semi-conductor chip, a first and a second contact layer, wherein the semi-conductor chip is electrically conductively connected to the first contact structure via the first, contact layer and to the second contact structure via the second contact layer, a passivation layer arranged on the semi-conductor chip.11-17-2011
20110278618SUBSTRATE FOR MOUNTING LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING DEVICE - To provide a substrate for a light-emitting element, being less susceptible to the loss of light supplied from a light emitting element, having high utilization efficiency of light, being excellent in flatness of a mounting surface on which a light-emitting element is to be mounted, and having a low heat resistance, when used for a light-emitting device.11-17-2011
20110278619QUATERNARY VERTICAL LIGHT EMITTING DIODE WITH DOUBLE SURFACE ROUGHENING AND MANUFACTURING METHOD THEREOF - The present invention discloses a quaternary vertical light emitting diode with double surface roughening and a manufacturing method thereof, where a Bragg reflective layer is formed on a substrate; a first type of epitaxial layer is formed on the Bragg reflective layer; a light emitting layer is formed on the first type of epitaxial layer; a second type of epitaxial layer is formed on the light emitting layer; a first GaP window layer with small circular holes or in a mesh structure is formed on the second type of epitaxial layer; a second GaP window layer with small circular holes or in a mesh structure is formed on the first GaP window layer; a first electrode is formed on the top surface of the second GaP window layer; and a second electrode is formed on the bottom surface of the GaAs substrate. After conventional processes, the invention forms the alternating small circular holes or the mesh structure between the first GaP window layer and the second GaP window layer to change a light path along which light emitting from the light emitting layer reaches the surface of a light emitting diode die so that more of light emits from inside and the light extracting rate of the invention is 20% higher than that of an existing light emitting diode.11-17-2011
20110278617LIGHT EMITTING DEVICE PACKAGE - A light emitting device package is provided comprising a substrate, a light source unit disposed on the substrate and a dam unit spaced apart from the light source unit and disposed on the substrate, wherein the dam unit including silicon resin and metal oxide, and the metal oxide is contained in an amount of 5 wt % to 150 wt % based on a total amount of the silicon resin.11-17-2011
20110278616MANUFACTURING METHOD OF WAVELENGTH CONVERSION ELEMENT, WAVELENGTH CONVERSION ELEMENT, AND LIGHT EMITTING DEVICE - A manufacturing method of a wavelength conversion element suppresses the changes of the chromaticities among wavelength conversion elements. The manufacturing method of the wavelength conversion element including a glass substrate and a ceramic layer in which a phosphor is dispersed is disclosed. The manufacturing method includes the step of preparing a mixture containing a ceramic precursor, a solvent, and the phosphor, which mixture has viscosity within a range of from 10 cp to 1000 cp, the step of coating the mixture onto at least one surface of a glass substrate, the step of baking the mixture to form the ceramic layer, and the step of dicing the glass substrate and the ceramic layer after the baking.11-17-2011
20110278613LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF - A light emitting diode includes a substrate, a buffer layer on the substrate, a patterned layer having a first reflective index on the buffer layer, a semiconductor layer having a second reflective index on the patterned layer, and an illumination structure on the semiconductor layer. A method for manufacturing the light emitting diode is also provided.11-17-2011
20110278615ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display device and a method of its manufacture are provided, whereby manufacturing processes are simplified and display quality may be enhanced. The display device includes: an active layer of a thin film transistor (TFT), on a substrate and including a semiconducting material; a lower electrode of a capacitor, on the substrate, doped with ion impurities, and including a semiconducting material; a first insulating layer on the substrate to cover the active layer and the lower electrode; a gate electrode of the TFT, on the first insulating layer; a pixel electrode on the first insulating layer; an upper electrode of the capacitor, on the first insulating layer; source and drain electrodes of the TFT, electrically connected to the active layer; an organic layer on the pixel electrode and including an organic emission layer; and a counter electrode facing the pixel electrode, the organic layer between the counter electrode and the pixel electrode.11-17-2011
20110278614LIGHT EMITTING DEVICE, AND METHOD FOR THE PRODUCTION THEREOF - The present invention relates to a composition of plastic material that includes from 7 to 20 wt. % inorganic conversion pigments. The pigments include Si, Sr, Ba, Ca and Eu in concentrations of greater than 0 ppm and Al, Co, Fe, Mg, Mo, Na, Ni, Pd, P, Rh, Sb, Ti and Zr in concentrations of less than or equal to 50 ppm11-17-2011
20110278610PACKAGE STRUCTURE AND PACKAGE PROCESS OF LIGHT EMITTING DIODE - A light emitting diode (LED) package structure comprising a carrier, an LED chip, a first encapsulant, at least one bonding wire, a plurality of phosphor particles and a second encapsulant is provided. The LED chip is disposed on the carrier. The LED chip has at least one electrode. The first encapsulant is disposed on the carrier and covering the LED chip. The first encapsulant is provided with at least one preformed opening exposing at least a portion of the at least one electrode. The at least one bonding wire is electrically connected between the at least one electrode and the carrier via the at least one preformed opening. The phosphor particles are distributed within the first encapsulant. The second encapsulant is disposed on the carrier and encapsulates the LED chip, the first encapsulant and the at least one bonding wire.11-17-2011
20110278612ORGANIC LIGHT EMITTING DIODE STRUCTURE AND FABRICATING METHOD THEREOF - An organic light emitting diode structure is disclosed. The hole transport layer of the organic light emitting diode structure is used as a first primary color light emitting layer. A second primary color light emitting unit and a third primary color light emitting unit are formed on the first primary color light emitting layer, and a part of the first primary color light emitting layer is exposed. A method for fabricating the organic light emitting diode structure is also disclosed.11-17-2011
20110278611LIGHT EMITTING DEVICE - A light emitting device includes a substrate and an organic electroluminescent device. Inside the substrate, there are a plurality of micro-structures proceeded with fusing and then curing. The organic electroluminescent device is disposed on the substrate.11-17-2011
20110278609PACKAGE STRUCTURE AND PACKAGE PROCESS OF LIGHT EMITTING DIODE - A light emitted diode (LED) package structure and an LED package process are provided. The LED package structure comprises a carrier, a spacer, at least one LED chip, a junction coating, a plurality of phosphor particles, and an encapsulant. The spacer is disposed on the carrier and provided with a reflective layer covering a top surface of the spacer. The LED chip is disposed on the reflective layer and electrically connected to the carrier. The junction coating is disposed over the spacer and covers the LED chip. The phosphor particles are distributed within the junction coating. The encapsulant is disposed on the carrier and encapsulates the LED chip, the spacer and the junction coating. Uniform light output and high illuminating efficiency can be obtained by the phosphor particles uniformly distributed in the junction coating. The junction coating is formed by package level dispensing process to reduce the fabrication cost.11-17-2011
20090065792METHOD OF MAKING AN LED DEVICE HAVING A DOME LENS - A method of making a light emitting device is disclosed herein. The method includes providing an LED die and dispensing a photopolymerizable composition to form a photopolymerizable dome lens, wherein the photopolymerizable composition is optically coupled to the LED die. The photopolymerizable dome lens may be formed by the photopolymerizable composition using a single drop or a plurality of drops. In one embodiment, the photopolymerizable composition comprises a metal-containing catalyst and a silicon-containing resin comprising silicon-bonded hydrogen and aliphatic unsaturation. The photopolymerizable dome is polymerized to form a polymerized dome lens. Light emitting devices prepared according to the methods are also described.03-12-2009
20100301364LIGHT EMISSION DEVICE - A light emission device and a display device including the same. The light emission device includes: a substrate body having a concave portion recessed into the substrate body and extending along a first direction; a first electrode in the concave portion and extending along the first direction; a second electrode on a front surface of the substrate body and extending along a second direction crossing the first electrode; an anti-conduction electrode disposed at an edge portion of the substrate body and extending along the second direction to be parallel with the second electrode; and an electron emission unit on the first electrode and spaced apart from the second electrode. Here, each of the second electrode and the anti-conduction electrode includes: a mesh unit having a plurality of opening portions; and a support unit joined to the substrate body while surrounding the mesh unit.12-02-2010
20120181557ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME - The disclosed technology is in connection with an array substrate of a thin film transistor liquid crystal display (TFT-LCD) and a method for manufacturing the same, and the array substrate comprises: a base substrate; a gate line and a data line forming on the base substrate and defining a pixel region, a pixel electrode, a thin film transistor and a common electrode are formed in the pixel region; a black matrix made of conductive thin film material, the black matrix is electrically connected with the common electrode.07-19-2012
20120181558WAFER LEVEL LIGHT-EMITTING DEVICE PACKAGE AND METHOD OF MANUFACTURING THE SAME - A wafer level light-emitting device package may include a polymer layer that bonds a light-emitting structure to a package substrate, and the polymer layer and the package substrate may include a plurality of via holes. Also, a method of manufacturing the wafer level light-emitting device package may include forming the polymer layer on the light-emitting structure, bonding the package substrate onto the polymer layer by applying heat and pressure, and forming a plurality of via holes in the polymer layer and the package substrate.07-19-2012
20080203412LED assembly with molded glass lens - A LED assembly with a molded glass lens includes a base, at least one LED chip and a cover lens. The LED assembly feature on that the cover lens consists of a molded glass lens and a transparent resin layer. A molded glass lens is covered on a loading surface of the base and then liquid transparent resin is filled into space between an inner surface of the molded glass lens and the loading surface through preset filling holes to coat the LED chip completely. After hardening, the transparent resin integrated with the molded glass lens so as to replace conventional cover lens made from transparent resin. Therefore, not only thermal resistance, weather resistance, discoloration resistance, and mechanical strength of the LED assembly are increased, but the brightness and light-emitting efficiency of the LED assembly are also improved.08-28-2008
20110121337SEMICONDUCTOR LIGHT-EMITTING DEVICE - The present invention provides a nitride semiconductor light-emitting device capable of preventing shortening of the device lifetime due to increase in the driving voltage of the device and internal heat generation, and also providing uniform laser characteristics, even if the device has a ridge stripe structure. On a GaN substrate 05-26-2011
20110140153LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE - Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a substrate including a plurality of patterns, each pattern including three protrusion parts, a plurality of spaces formed between the patterns, and a light emitting device structure over the patterns and the spaces. Each space includes a medium having a refractive index different from a refractive index of the light emitting device structure.06-16-2011
20110140151Organic-light emitting device, light equipment including the same, and organic light-emitting display apparatus including the same - An organic light-emitting device includes a substrate, a first electrode layer on the substrate, a patterned refractive layer on the first electrode layer, a taper angle between a patterned end of the refractive layer and a surface of the first electrode being about 20 to about 60 degrees, the refractive layer including a material having a different refractive index than at least one of the first electrode layer and an organic light-emitting layer, the organic light-emitting layer that covers the refractive layer and is on the first electrode, the organic light-emitting layer contacting the patterned end of the refractive layer, and a second electrode layer on the organic light-emitting layer.06-16-2011
20110140149OPTICAL DEVICE FOR SEMICONDUCTOR BASED LAMP - This invention discloses an optical device for a semiconductor based lamp, the optical device comprising a base for mounting a semiconductor based light-emitting device, and a light-redirecting member having an opening and a reflective surface next to the opening, wherein the opening is aligned directly above the semiconductor based light-emitting device, and the reflective surface redirects light emitted from the semiconductor-based light-emitting device to lateral directions.06-16-2011
20100283076COATED PHOSPHOR PARTICLES WITH REFRACTIVE INDEX ADAPTION - The invention relates to coated phosphor particles comprising luminescent particles and at least one, preferably substantially transparent, metal, transition-metal or semimetal oxide coating, and to a process for the production thereof.11-11-2010
20110297988TRANSPARENT SUBSTRATE FOR PHOTONIC DEVICES - Transparent substrate (12-08-2011
20110297987OPTICAL SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, an optical semiconductor device includes a light emitting layer, a transparent layer, a first metal post, a second metal post and a sealing layer. The light emitting layer includes a first and a second major surface, a first and a second electrode. The second major surface is a surface opposite to the first major surface, and the first electrode and second electrodes are formed on the second major surface. The transparent layer is provided on the first major surface. The first metal post is provided on the first electrode. The second metal post is provided on the second electrode. The sealing layer is provided on the second major surface. The sealing layer covers a side surface of the light emitting layer and seals the first and second metal posts while leaving end portions of the first and second metal posts exposed.12-08-2011
20110297993LIGHT EMITTING DEVICE HAVING LIGHT EXTRACTION STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.12-08-2011
20110140143LIGHT EMITTING DIODE PACKAGE AND METHOD OF MANUFACTURING THE SAME - Disclosed is a light emitting diode package, including a metal body including a cavity for receiving a light emitting diode therein, a lens mount for mounting thereon a lens through which light is transmitted, a heat sink for dissipating heat, a lead insertion recess formed on a bottom surface of the metal body so that a lead is inserted therein, and a bonding hole formed to communicate with the lead insertion recess and passing through the cavity of the metal body; and a lead seated into the lead insertion recess of the metal body and insulation bonded to the bottom surface of the metal body by means of an insulating binder, so that an insulation type bonding relationship between the metal body and the lead is maintained stable. A method of manufacturing the light emitting diode package is also provided.06-16-2011
20120138991HIGH-EFFICIENCY LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - This invention provides a high-efficiency light-emitting device and the manufacturing method thereof The high-efficiency light-emitting device includes a substrate; a reflective layer; a bonding layer; a first semiconductor layer; an active layer; and a second semiconductor layer formed on the active layer. The second semiconductor layer includes a first surface having a first lower region and a first higher region.06-07-2012
20100123153LIGHT-EMITTING DEVICE - This application discloses a light-emitting device comprising a light-emitting stack layer, a first transparent conductive layer disposed below the light-emitting stack layer, a transparent dielectric barrier layer disposed below the first transparent conductive layer, a second transparent conductive layer disposed below the transparent dielectric barrier layer and a metal reflective layer disposed below the second transparent conductive layer wherein an omni-directional reflector (ODR) comprises the metal reflective layer and the second transparent conductive layer. Besides, the first transparent conductive layer is ohmically connected with the light-emitting stack layer.05-20-2010
20090315056SEMICONDUCTOR DEVICE PACKAGE - A semiconductor device package is provided. The semiconductor device package comprises a package body, a plurality of electrodes, a paste member, and a semiconductor device. The electrodes comprise a first electrode disposed on the package body. The paste member is disposed on the first electrode and comprises at least one of an inorganic filler and metal powder. The semiconductor device is die-bonded on the paste member.12-24-2009
20120138997WHITE COLOR REFLECTING MATERIAL AND PROCESS FOR PRODUCTION THEREOF - A general-use white color reflecting material, and a process for production thereof are provided. The white color reflecting material, without troublesome surface treatment such as formation of a reflective layer by plating, is capable of reflecting a near-ultraviolet ray of a wavelength region of 380 nm or longer or a near-infrared ray sufficiently without light leakage; does not become yellow even when exposed to near-ultraviolet rays; has excellent lightfastness, heat resistance, and weatherability; has high mechanical strength and chemical stability; is capable of maintaining a high degree of whiteness; and is easily moldable at a low cost. Further a white color reflecting material used as an ink composition for producing the white color reflecting material in a film shape is also provided. The white color reflecting material comprises; a silicone resin or silicone rubber formed from titanium oxide-containing silicone composition, in which anatase-type or rutile-type titanium oxide particles are dispersed.06-07-2012
20120086040LIGHT-EMITTING DIODE HAVING A WAVELENGTH CONVERSION MATERIAL LAYER, AND METHOD FOR FABRICATING SAME - Provided is a light-emitting diode having a wavelength conversion material and a method for fabricating the same. The light-emitting diode comprises: a base structure; a light-emitting diode chip arranged on the base structure; and a wavelength conversion material layer arranged on the light-emitting diode chip, such that the area adjacent the upper surface of the light-emitting diode chip is thicker than the area adjacent to the side surface of the light-emitting diode chip. In addition, the method for fabricating a light-emitting diode comprises: a step of arranging the light-emitting diode chip on the base structure; and a step of arranging a wavelength conversion material layer containing a light-transmitting photocurable material on the light-emitting diode chip, such that the area thereof adjacent to the upper surface of the light-emitting diode chip is thicker than the area thereof adjacent to the side surface of the light-emitting diode chip.04-12-2012
20090309115SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes: a package base having recesses which are open in a light irradiating direction; a plurality of light emitting elements arranged on bottoms of the recesses and emitting light having different colors; first light transmitting resin extending over the light emitting elements on the bottoms of the recesses and containing a fluorescent substance; and second light transmitting resin extending over the first transmitting resin in the recesses and oriented toward openings of the recesses, containing a fewer fluorescent substance than the fluorescent substance of the first light transmitting resin, and being thicker than the first light transmitting resin.12-17-2009
20110297989LIGHT EMITTING DEVICE - The light emitting device comprises a mounting substrate and an LED chip which comprises an n-type nitride semiconductor layer, a nitride light emission layer on the n-type nitride semiconductor layer, p-type nitride semiconductor layer on the nitride light emission layer, an anode electrode opposite of the nitride light emission layer from the p-type nitride semiconductor layer, and a cathode electrode on the n-type nitride semiconductor layer. The mounting substrate has a patterned conductor which is connected to the cathode electrode through a bump and also connected to the anode electrode through a bump. The LED chip further comprises one or more dielectric layer between the p-type nitride semiconductor layer and the anode electrode to have an arrangement which resembles an island. The p-type nitride semiconductor layer has a first region which is overlapped with the bump. The dielectric layer is not formed within the first region.12-08-2011
20110297982Optoelectronic Semiconductor Chip - A semiconductor chip is specified, comprising an active layer provided for emitting an electromagnetic radiation, and a two-dimensional arrangement of structural units, which is disposed downstream of the active layer in a main emission direction of the semiconductor chip. The structural units are arranged in an arbitrary statistical distribution. Such an arrangement of structural units makes it possible to realize a semiconductor chip having a directional emission characteristic.12-08-2011
20100171140SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a semiconductor light emitting device that minimizes reflection or absorption of emitted light, maximizes luminous efficiency with the maximum light emitting area, enables uniform current spreading with a small area electrode, and enables mass production with high reliability and high quality. A semiconductor light emitting device according to an aspect of the invention includes first and second conductivity type semiconductor layers, an active layer formed therebetween, first electrode layer, and a second electrode part electrically connecting the semiconductor layers. The second electrode part includes an electrode pad unit, an electrode extending unit, and an electrode connecting unit connecting the electrode pad unit and electrode extending unit.07-08-2010
20100171139LIGHT EMITTING DEVICE - A light emitting device includes: a light emitting element; 07-08-2010
20100171138Light Emitting Device and Electronic Device - Thinned and highly reliable light emitting elements are provided. Further, light emitting devices in which light emitting elements are formed over flexible substrates are manufactured with high yield. One light emitting device includes a flexible substrate, a light emitting element formed over the flexible substrate, and a resin film covering the light emitting element, and in the light emitting element, an insulating layer serving as a partition has a convex portion and the convex portion is embedded in the resin film, that is, the resin film covers an entire surface of the insulating layer and an entire surface of the second electrode, whereby the light emitting element can be thinned and highly reliable. In addition, a light emitting device can be manufactured with high yield in a manufacturing process thereof.07-08-2010
20100171136LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME - The present invention provides a method of fabricating a light emitting diode, which comprises the steps of forming a compound semiconductor layer on a substrate, the compound semiconductor layer including a lower semiconductor layer, an active layer and an upper semiconductor layer; and scratching a surface of the substrate by rubbing the substrate with an abrasive. According to the present invention, the abrasive is used to rub and scratch the surface of the light emitting diode, thereby making it possible to cause the light emitted from the active layer to effectively exit to the outside. Therefore, the light extraction efficiency of the light emitting diode can be improved.07-08-2010
20100171137LIGHT EMITTING DEVICE AND LAYERED LIGHT EMITTING DEVICE - A light emitting device includes a support part, a first cladding layer formed above the support part, an active layer formed above the first cladding layer, a second cladding layer formed above the active layer, and a reflective part formed above the support part and separated from the active layer. At least a portion of the active layer constitutes a plurality of gain regions. Each of the plurality of gain regions is provided at an angle with respect to a line normal to a first lateral surface of the active layer, from the first lateral surface to a second lateral surface of the active layer that is parallel to the first lateral surface. The plurality of gain regions forms at least one gain region pair. A first gain region that is one of the gain region pair is provided in one direction. A second gain region that is the other of the gain region pair is provided in another direction different from the one direction. At least a portion of an end surface of the first gain region, the end surface being located on the side of the second lateral surface, and at least a portion of an end surface of the second gain region, the end surface being located on the side of the second lateral surface, overlap with each other. Light emitted from the end surface of the first gain region, the end surface being located on the side of the first lateral surface, is reflected by the reflective part, and propagates in the same direction or in the focusing direction with light emitted from the end surface of the second gain region, the end surface being located on the side of the first lateral surface.07-08-2010
20100171134OPTICAL CONVERTER AND MANUFACTURING METHOD THEREOF AND LIGHT EMITTING DIODE - The present invention relates to an optical converter and a manufacturing method thereof and a light emitting diode. An optical converter for a light emitting diode includes two substrates, in which, a annular first cavity wall is arranged between the two substrates, and an airtight space filled with an optical conversion substance is surrounded by the first cavity wall and the two substrates. The invention implements the encapsulation and manufacturing of the optical conversion substance for the LED. The structure and the manufacturing method according to the invention can be utilized to encapsulate an active optical conversion substance in the optical converter while avoiding the active optical conversion substance reacting to other active substance, e.g., oxygen, during manufacturing. Furthermore, the optical conversion substance is encapsulated with wafer level chip size packaging to thereby improve the efficiency of manufacturing the optical converter and reduce the cost.07-08-2010
20100171133CAPSULAR MICRO LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - The present invention provides a capsular micro light-emitting device and a method for manufacturing the same. The capsular micro light-emitting device includes a light emitting part having at least a light emitting layer 07-08-2010
20110198647SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device which can suppress the self-absorption of light propagating in a semiconductor film without hindering current spread therein. A reflecting film provided between a support substrate and the semiconductor film of the device includes reflecting electrodes that are in ohmic contact with the semiconductor film and that form current paths between the reflecting electrodes and surface electrodes in the semiconductor film. The reflecting electrodes are in contact with the semiconductor film at such positions that the surface electrodes, provided on the light-extraction-surface-side surface of the semiconductor film, are not over the reflecting electrodes along a direction of the thickness of the semiconductor film. The semiconductor film has reflecting-surface-side recesses made in regions containing regions directly under the surface electrodes and recessed toward the light-extraction-surface side, and reflecting-surface-side protrusions provided in regions containing parts of the semiconductor film in contact with the reflecting electrodes and bonded to the support substrate via the reflecting film.08-18-2011
20090294785LED DEVICE STRUCTURE TO IMPROVE LIGHT OUTPUT - A light-emitting device, including a substrate; a LED element formed over the substrate including a transparent or semi-transparent electrode, a reflective electrode, and one or more layers, at least one of which is light-emitting, formed between the transparent or semi-transparent electrode and reflective electrode, the transparent or semi-transparent electrode and reflective electrode defining a single, controllable light-emitting area, wherein the LED element emits light into a waveguide defined by the transparent or semi-transparent electrode, reflective electrode, and the one or more layers; and one or more first topographical features and one or more second topographical features different from the first topographical features formed over the substrate within the single, controllable light-emitting area, wherein the first and second topographical features disrupt the waveguiding of light within the single, controllable light-emitting area to increase the emission of light in at least one direction.12-03-2009
20110284908SEMICONDUCTOR LIGHT EMITTING DEVICE, SEMICONDUCTOR LIGHT EMITTING APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a stacked structural body, a first electrode, a second electrode, a third electrode, and a fourth electrode. The stacked structural body includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The first electrode is electrically connected to the first semiconductor layer. The second electrode forms an ohmic contact with the second semiconductor layer. The second electrode is translucent to light emitted from the light emitting layer. The third electrode penetrates through the second electrode and is electrically connected to the second electrode to form Shottky contact with the second semiconductor layer. The third electrode is disposed between the fourth electrode and the second semiconductor layer. A shape of the fourth electrode as viewed along a stacking direction of the first semiconductor layer, the light emitting layer, and the second semiconductor layer is same as a shape of the third electrode as viewed along the stacking direction.11-24-2011
20110284904THIN-LIGHT EMITTING DIODE LAMP, AND METHOD OF MANUFACTURING THE SAME - A thin-type light emitting diode lamp includes a blue light emitting diode chip (11-24-2011
20110284906VERTICAL LIGHT EMITTING DIODE DEVICE STRUCTURE AND METHOD OF FABRICATING THE SAME - A method of fabricating a compound semiconductor vertical LED is provided. A first growth substrate capable of supporting compound semiconductor epitaxial growth thereon is provided. One or more epitaxial layers of compound semiconductor material such as GaN or InGaN is formed on the first growth substrate to create a portion of a vertical light emitting diode. Plural trenches are formed in the compound semiconductor material. Passivating material is deposited in one or more trenches. A hard material is at least partially deposited in the trenches and optionally on portions of the compound semiconductor material. The hard material has a hardness greater than the hardness of the compound semiconductor. A metal layer is deposited over the compound semiconductor material followed by metal planarization. A new host substrate is bonded to the metal layer and the first growth substrate is removed. Dicing is used to form individual LED devices.11-24-2011
20110284903Semiconductor Light Emitting Device Packages and Methods - A submount for a light emitting device package includes a substrate. A first bond pad and a second bond pad are on a first surface of the substrate. The first bond pad includes a die attach region offset toward a first end of the substrate and configured to receive a light emitting diode thereon. The second bond pad includes a bonding region between the first bond pad and the second end of the substrate and a second bond pad extension that extends from the bonding region along a side of the substrate toward a corner of the substrate at the first end of the substrate. First and second solder pads are a the second surface of the substrate. The first solder pad is adjacent the first end of the substrate and contacts the second bond pad. The second solder pad is adjacent the second end of the substrate and contacts the first bond pad. Related LED packages and methods of forming LED packages are disclosed.11-24-2011
20110284905NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride-based semiconductor light-emitting device 11-24-2011
20110284902LIGHT EMISSION MODULE, LIGHT EMISSION MODULE MANUFACTURING METHOD, AND LAMP UNIT - In a light emission module (11-24-2011
20110284900LIGHT EMITTING DIODE PACKAGE - Exemplary embodiments of the present invention provide light emitting diode (LED) packages which include a housing configured to surround uplift portions formed on lead frames electrically connected to an LED chip. The LED package includes an LED chip, a first lead frame and a second lead frame electrically connected to the LED chip, the first lead frame and the second lead frame respectively including a first uplift portion and a second uplift portion on regions thereof facing each other, and a housing supporting the first lead frame and the second lead frame, a first side of the housing exposed to the outside. The first lead frame and the second lead frame each include a first side parallel to the first side of the housing and a second side opposite to the first side.11-24-2011
20110284898ELECTRO-OPTIC DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS - An electro-optic device includes a light-emitting element disposed above a substrate, an optically transparent sealing film covering the light-emitting element, and a color filter disposed on the sealing film so as to adjoin the sealing film. The sealing film includes a thin portion overlapping at least part of the light-emitting element, and a thick portion surrounding the thin portion. The thin portion and the thick portion form a recess in the sealing film. The color filter fills the recess.11-24-2011
20110284897SEMICONDUCTOR LIGHT EMITTING DEVICE - The device includes a first ceramic layer; a second ceramic layer on the first ceramic layer and having a light emitting element mounting area; a reflective layer so formed on a surface of the second ceramic layer that the reflective layer covers at least the mounting area; a protective layer which covers the reflective layer; a semiconductor light emitting element mounted on the protective layer positioned above the element mounting area; and at least one heat dissipation via passing through the first ceramic layer. The heat dissipation via is disposed in a position that does not overlap with the element mounting area in a direction in which the ceramic layers are stacked.11-24-2011
20110284901LIGHT EMITTING DEVICE, METHOD OF FABRICATING THE SAME AND LIGHT EMITTING DEVICE PACKAGE - Disclosed herein is a light emitting device including a first nitride semiconductor and a second nitride semiconductor, each of which includes a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, and a connection layer formed between the second conductivity-type semiconductor layer of the second nitride semiconductor and the first conductivity-type semiconductor layer of the first nitride semiconductor, wherein the first nitride semiconductor and the second nitride semiconductor are connected by the connection layer, and the light emitting device further comprises electrodes formed on at least a part of the second conductivity-type semiconductor layer of the first nitride semiconductor, at least a part of the first conductivity-type semiconductor layer of the second nitride semiconductor, and at least a part of the second conductivity-type semiconductor layer of the second nitride semiconductor. The light emitting device may be driven and emit light using AC power.11-24-2011
20110284899Organic Light Emitting Device Lighting Panel - A first device that may include one or more organic light emitting devices. At least 65 percent of the photons emitted by the organic light emitting devices are emitted from an organic phosphorescent emitting material. An outcoupling enhancer is optically coupled to each organic light emitting device. In one embodiment, the light panel is not attached to a heat management structure. In one embodiment, the light panel is capable of exhibiting less than a 10 degree C. rise in junction temperature when operated at a luminous emittance of 9,000 lm/m11-24-2011
20110284893Optoelectronic Semiconductor Chip - A description is given of an optoelectronic semiconductor chip (11-24-2011
20110284896LIGHT-EMITTING DEVICE AND LIGHTING SYSTEM - Disclosed is a light-emitting device including a support member, a reflective layer on the support member, a light-transmitting electrode layer on the reflective layer, a light-emitting structure on the light-transmitting electrode layer, the light-emitting structure being provided with a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, and a luminescence layer interposed between the reflective layer and the light-transmitting electrode layer. Accordingly, the luminescence layer is formed in the chip formation process to minimize non-uniform application of a phosphor composed of an epoxy resin and simplify fabrication of the light-emitting device.11-24-2011
20110284892LIGHT EMITTING DIODE APPARATUS AND METHOD FOR ENHANCING LUMINOUS EFFICIENCY THEREOF - A light emitting diode apparatus with enhanced luminous efficiency is disclosed in the present invention. The light emitting diode apparatus includes a light emitting diode chip for providing a first light beam; a substrate, having a cross-section of a trapezoid, for supporting the light emitting diode chip, which is transparent to the first light beam; and an encapsulating body, containing a phosphor and encapsulating the light emitting diode chip and the substrate, for fixing the light emitting diode chip and the substrate and providing a second light beam when the phosphor is excited by the first light beam. Due to the shape of the substrate, contact area of the substrate with the phosphor is enlarged. Luminous efficiency is enhanced as well.11-24-2011
20110284895LIGHT-EMITTING SEMICONDUCTOR DEVICE - The present invention provides a light-emitting semiconductor device, which comprises a substrate having a surface formed with a plane and a plurality of protrusions out of the plane. The plane is on a crystalline orientation. The protrusion is provided with an outer surface consisting of a plurality of sidewall surfaces. The sidewall surfaces are substantially not on the crystalline orientation. The protrusion is formed with an outline edge extended from the bottom to the top of the protrusion from a side view. The outline edge comprises at least one turning point. A first conductive type semiconductor layer is above the surface of the substrate, an active layer is above the first conductive type semiconductor layer, and a second conductive type semiconductor layer is above the active layer.11-24-2011
20110284894LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING DEVICE SYSTEM - A light emitting device includes a substrate, a light emitting structure including a first conductive semiconductor layer having an exposed region, an active layer, and a second conductive semiconductor layer on the substrate, a first electrode on the exposed region of the first conductive semiconductor layer, and a second electrode on the second conductive semiconductor layer, wherein a side of the light emitting structure includes a first sloped side sloped from a reference plane, the first sloped side includes a concave-convex pattern having a concave-convex structure in which a first direction length is greater than a second direction length, the reference plane is a plane perpendicular to a direction in which the substrate faces the light emitting structure, and the first direction is a sloped direction of the first sloped side and the second direction is a lateral direction of the first sloped side.11-24-2011
20080308829VERTICAL LED WITH CURRENT GUIDING STRUCTURE - Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a metal alloy substrate) may be provided. For some embodiments, both a current guiding structure and second current path may be provided.12-18-2008
20090261367OPTICAL ERASE MEMORY STRUCTURE - A method for providing an optical erase memory structure including: forming a metal-insulator-metal memory cell; positioning a light emitting diode adjacent to the metal-insulator-metal memory cell; and emitting a light emission from the light emitting diode for erasing the metal-insulator-metal memory cell.10-22-2009
20090020775RED LINE EMITTING COMPLEX FLUORIDE PHOSPHORS ACTIVATED WITH Mn4+ - New phosphor materials including a complex fluoride phosphor activated with Mn01-22-2009
20120286307SEMICONDUCTOR LIGHT EMITTING STRUCTURE - A semiconductor light emitting structure including a substrate, a second type electrode layer, a reflecting layer, an insulating layer, a first type electrode layer, a first type semiconductor layer, an active layer and a second type semiconductor layer is provided. The second type electrode layer formed on the substrate has a current spreading grating formed by several conductive pillars and conductive walls, which are staggered and connected to each other. The reflecting layer and the insulating layer are formed on the second type electrode layer in sequence, and cover each conductive pillar and each conductive wall. The first type electrode layer, the first type semiconductor layer and the active layer are formed on the insulating layer in sequence. The second type semiconductor layer is formed on the active layer, and covers each conductive pillar and each conductive wall.11-15-2012
20130020601LIGHT EMITTING DEVICE - A light emitting device is configured to achieve a white color by mixing light from respective phosphors. The light emitting device includes: a light emitting element for emitting ultraviolet or short-wavelength visible light having a peak wavelength in a wavelength range of 380 to 420 nm; a first phosphor excited by the ultraviolet or short-wavelength visible light to emit visible light having a peak wavelength in a wavelength range of 560 nm to 600 nm; a second phosphor excited by the ultraviolet or short-wavelength visible light to emit visible light having a complementary relationship with visible light emitted by the first phosphor; and a light transmitting member which is a light transmitting layer for covering the light emitting element, and has the first phosphor and the second phosphor dispersed therein.01-24-2013
20090179213PHOSPHOR COATING SYSTEMS AND METHODS FOR LIGHT EMITTING STRUCTURES AND PACKAGED LIGHT EMITTING DIODES INCLUDING PHOSPHOR COATING - Methods are disclosed including applying a layer of binder material onto an LED structure. A luminescent solution including an optical material suspended in a solution is atomized using a flow of pressurized gas, and the atomized luminescent solution is sprayed onto the LED structure including the layer of binder material using the flow of pressurized gas.07-16-2009
20100171135Optoelectronic Semiconductor Body and Method for Producing the Same - The invention relates to an opto-electronic semiconductor body having a semiconductor layer sequence (07-08-2010
20110291140LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE - Provided is a light emitting device. The light emitting device includes a light emitting structure layer including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, a gallium barrier layer on the light emitting structure layer, and a metal electrode layer on the gallium barrier layer.12-01-2011
20110291138LIGHT-EMITTING ELEMENT PACKAGE AND FABRICATION METHOD THEREOF - A light-emitting element package includes a package member for encapsulating a light-emitting element. A plurality of photonic crystal patterns is formed on the package member. A distribution density of the photonic crystal patterns corresponds to light distribution of the light-emitting element. Each photonic crystal pattern consists of a plurality of photonic crystals.12-01-2011
20110291132LIGHT-EMITING DEVICE WITH IMPROVED COLOR RENDERING INDEX - A light-emitting device (LED) is disclosed. The LED includes a carrier substrate having a blue light emitter thereon. A layer containing a fluorescent material is on the blue light emitter. An encapsulant is disposed around the blue light emitter. Pigments are suspended between an outer surface of the encapsulant and the blue light emitter.12-01-2011
20110291136LIGHT-EMITTING ELEMENT AND FABRICATION METHOD THEREOF - A light-emitting element includes a substrate, a light-emitting module and at least two electrodes. The light-emitting module is formed on the substrate. The at least two electrodes are formed on the light-emitting module. Exterior surfaces of the light-emitting module are separated into a first part and a second part. The first part is defined between the at least two electrodes and the light-emitting module. The second part includes exterior surfaces not contacting the at least two electrodes. The first part is smooth. At least a part of the second part is rough.12-01-2011
20110291142OXYNITRIDE PHOSPHOR, METHOD FOR PREPARING THE SAME, AND LIGHT-EMITTING DEVICE - The present invention relates to an oxynitride phosphor, a method for preparing the same, and a light-emitting device. More specifically, the present invention provides the oxynitride phosphor including crystals represented by the following Chemical Formula, a method for preparing the same, and a light-emitting device including the oxynitride phosphor. The invention includes the crystals' represented by the following Chemical Formula to obtain high light-emitting efficiency. [Chemical Formula] (A12-01-2011
20110291139CHIP PACKAGE AND METHOD FOR FORMING THE SAME - An embodiment of the invention provides a chip package which includes: a substrate having a first surface and a second surface; an optical device disposed on the first surface; a conducting pad disposed on the first surface; a first alignment mark formed on the first surface; and a light shielding layer disposed on the second surface and having a second alignment mark, wherein the second alignment mark corresponds to the first alignment mark.12-01-2011
20110291137LIGHT EMITTING DEVICE PACKAGE - A light emitting device package is provided. The light emitting device package may include a housing including a cavity, a light emitting device disposed within the cavity, a filler filled in the cavity in order to seal the light emitting device, a fluorescent layer disposed on the filler, and an optical filter being disposed within the filler and transmitting light with a particular wavelength.12-01-2011
20090283787SEMICONDUCTOR LIGHT EMITTING DIODES HAVING REFLECTIVE STRUCTURES AND METHODS OF FABRICATING SAME - Light emitting diodes include a diode region having first and second opposing faces that include therein an n-type layer and a p-type layer, an anode contact that ohmically contacts the p-type layer and extends on the first face, and a cathode contact that ohmically contacts the n-type layer and also extends on the first face. The anode contact and/or the cathode contact may further provide a hybrid reflective structure on the first face that is configured to reflect substantially all light that emerges from the first face back into the first face. Related fabrication methods are also described.11-19-2009
20110297992SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a semiconductor light emitting device that minimizes reflection or absorption of emitted light, maximizes luminous efficiency with the maximum light emitting area, enables uniform current spreading with a small area electrode, and enables mass production with high reliability and high quality. A semiconductor light emitting device according to an aspect of the invention includes first and second conductivity type semiconductor layers, an active layer formed therebetween, first electrode layer, and a second electrode part electrically connecting the semiconductor layers. The second electrode part includes an electrode pad unit, an electrode extending unit, and an electrode connecting unit connecting the electrode pad unit and electrode extending unit.12-08-2011
20110297990LIGHT EMITTING DEVICE AND DISPLAY - A light emitting device comprises: an LED chip having a quantum well structure and a light emitting layer made of a gallium nitride compound semiconductor; a first transparent material covering the LED chip; a second transparent material for protecting the LED chip and the first transparent material; and a phosphor for absorbing a part of the light from the LED chip and emitting a light having a wavelength different from the light from the LED chip; wherein the phosphor is included in second transparent material, and the light from the LED chip and the light from said phosphor are mixed to make a white light.12-08-2011
20110297986LIGHT SOURCE APPARATUS USING SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a light source apparatus includes a semiconductor light emitting device, a mounting substrate, first and second connection members. The semiconductor light emitting device includes a light emitting unit, first and second conductive members, a sealing member, and an optical layer. The mounting substrate includes a base body, first and second substrate electrodes. The connection member electrically connects the conductive member to the substrate electrode. The conductive member is electrically connected to the light emitting unit electrode and includes first and second columnar portions provided on the second major surface. The sealing member covers side surfaces of the first and the second conductive members. The optical layer is provided on the first major surface of the semiconductor stacked body and includes a wavelength conversion unit. A surface area of the second substrate electrode is not less than 100 times a cross-sectional area of the second columnar portion.12-08-2011
20110297985SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a light emitting section, a light transmitting section, a wavelength conversion section, a first conductive section, a second conductive section and a sealing section. The light emitting section includes a first major surface, a second major surface opposite from the first major surface, and a first electrode section and a second electrode section formed on the second major surface. The light transmitting section is provided on a side of the first major surface. The wavelength conversion section is provided over the light transmitting section. The wavelength conversion section is formed from a resin mixed with a phosphor, and hardness of the cured resin is set to exceed 10 in Shore D hardness.12-08-2011
20110297984PHOTOELECTRICAL ELEMENT HAVING A THERMAL-ELECTRICAL STRUCTURE - A photoelectrical element having a thermal-electrical structure including: a photoelectrical transforming layer, two semiconductor layers formed on the two opposite sides of the photoelectrical transforming layer respectively, an electrically conductive structure formed on at least one of the semiconductor layer, and a thermal-electrical structure formed in the electrically conductive structure, wherein the thermal-electrical structure performs the thermal-electrical transformation to promote current spreading effect, or proceed electrical-thermal transformation to dissipate the heat from the photoelectrical transforming layer.12-08-2011
20110297983SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor light emitting device includes a light emitting unit, first and second conductive members, an insulating layer, a sealing member, and an optical layer. The light emitting unit includes a semiconductor stacked body and first and second electrodes. The semiconductor stacked body includes first and second semiconductor layers and a light emitting layer, and has a major surface on a second semiconductor layer side. The first and second electrodes are connected to the first and second semiconductor layers on the major surface side, respectively. The first conductive member is connected to the first electrode and includes a first columnar portion covering a portion of the second semiconductor. The insulating layer is provided between the first columnar portion and the portion of the second semiconductor. The sealing member covers side surfaces of the conductive members. The optical layer is provided on the other major surface.12-08-2011
20110297981FLUORESCENT STRUCTURE AND METHOD FOR FORMING THE FLUORESCENT STRUCTURE AND LED PACKAGE USING THE SAME - A fluorescent structure for a light-emitting package includes a first fluorescent layer and a second fluorescent layer covering the first fluorescent layer. The first fluorescent layer includes first fluorescent strips, and defines first transparent regions between the first fluorescent strips. The second fluorescent layer includes second fluorescent strips, and defines second transparent regions between the second fluorescent strips. A method for forming the fluorescent structure and a light-emitting diode package using the fluorescent structure are also provided.12-08-2011
20110297980SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor light emitting device includes a light emitting chip and a fluorescent material layer. The light emitting chip includes a semiconductor layer, a first electrode, a second electrode, an insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, and a resin layer. The semiconductor layer includes a light emitting layer, a first major surface, and a second major surface formed on a side opposite to the first major surface. The fluorescent material layer is provided on the first major surface and has a larger planer size than the light emitting chip.12-08-2011
20110291144OPTICAL SEMICONDUCTOR DEVICE - A semiconductor optical module M is disclosed, where it includes a stem 12-01-2011
20100090240PHOTOELECTROCHEMICAL ETCHING FOR CHIP SHAPING OF LIGHT EMITTING DIODES - A photoelectrochemical (PEC) etch is performed for chip shaping of a device comprised of a III-V semiconductor material, in order to extract light emitted into guided modes trapped in the III-V semiconductor material. The chip shaping involves varying an angle of incident light during the PEC etch to control an angle of the resulting sidewalls of the III-V semiconductor material. The sidewalls may be sloped as well as vertical, in order to scatter the guided modes out of the III-V semiconductor material rather than reflecting the guided modes back into the III-V semiconductor material. In addition to shaping the chip in order to extract light emitted into guided modes, the chip may be shaped to act as a lens, to focus its output light, or to direct its output light in a particular way.04-15-2010
20100090241EMISSIVE LAYER PATTERNING FOR OLED - An organic light emitting device is provided. The device includes an anode, a cathode, and an organic emissive stack disposed between the anode and the cathode. The device may be a “pixel” in a display, capable of emitting a wide variety of colors through the use of independently addressable “sub-pixels,” each subpixel emitting a different spectrum of light. In the most general sense, the device includes a first subpixel and a second subpixel, and at least one of the anode and the cathode has independently addressable first and second regions corresponding to the first and second subpixels. The device includes an emissive stack disposed between the anode and the cathode. The emissive stack includes a first organic emissive layer and a second organic emissive layer. The first organic emissive layer is disposed between the anode and the cathode, and extends throughout the first and second regions. The second organic emissive layer is disposed between the anode and the cathode, and extends throughout the second region but not the first region. The second organic emissive layer is disposed closer to the cathode than the first organic emissive layer. The first organic emissive layer is emissive in the first region, and the second organic emissive layer is emissive in the second region.04-15-2010
20120286315SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - (OBJECT) The object is to provide a lightened semiconductor device and a manufacturing method thereof by pasting a layer to be peeled to various base materials.11-15-2012
20120286313RADIATION-EMITTING SEMICONDUCTOR COMPONENT - A radiation-emitting semiconductor component includes a semiconductor body having an active layer which emits electromagnetic radiation of a first wavelength λ11-15-2012
20120286311LIGHT EMITTING DIODE PACKAGE AND METHOD OF MANUFACTURE - A light emitting diode (LED) device and packaging for same is disclosed. In some aspects, the LED is manufactured using a vertical configuration including a plurality of layers. Certain layers act to promote mechanical, electrical, thermal, or optical characteristics of the device. The device avoids design problems, including manufacturing complexities, costs and heat dissipation problems found in conventional LED devices. Some embodiments include a plurality of optically permissive layers, including an optically permissive cover substrate or wafer stacked over a semiconductor LED and positioned using one or more alignment markers.11-15-2012
20120012883METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE AND FILM FORMATION SUBSTRATE - In a method for manufacturing a light-emitting device according to an embodiment of the present invention, one surface of a first substrate including a reflective layer including an opening, a light absorption layer formed over the reflective layer to cover the opening in the reflective layer, a protective layer formed over the light absorption layer and including a groove at a position overlapped with the opening in the reflective layer, and a material layer formed over the protective layer and a deposition surface of a second substrate are disposed to face each other and light irradiation is performed from the other surface side of the first substrate, so that an EL layer is formed in a region on the deposition surface of the second substrate, which is overlapped with the opening in the reflective layer.01-19-2012
20110291145OPTOELECTRONIC ELEMENT AND MANUFACTURING METHOD THEREOF - An optoelectronic element includes an optoelectronic unit having a first top surface, a first bottom surface opposite to the first top surface, and a lateral surface between the first top surface and the first bottom surface; a first transparent structure covering the lateral surface and exposing the first top surface of the optoelectronic unit; a first insulating layer on the first top surface and the first transparent structure; a second insulating layer on the first insulating layer; a first opening through the first insulating layer and the second insulating layer; and a first conductive layer on the second insulating layer and electrically connecting to the optoelectronic unit via the first opening.12-01-2011
20110291143LIGHT-EMITTING-DEVICE PACKAGE AND A METHOD FOR PRODUCING THE SAME - A light emitting device package includes: a substrate with a mounting surface; a light emitting device bonded to the mounting surface of the substrate; a light reflecting resin part containing a high reflective material, filled on the substrate around the light emitting device so as to extend in a space between the light emitting device and the substrate; and a packing resin part hermetically sealed to cover the light emitting device and the light reflection resin part.12-01-2011
20110127557LIGHT FIXTURE USING NEAR UV SOLID STATE DEVICE AND REMOTE SEMICONDUCTOR NANOPHOSPHORS TO PRODUCE WHITE LIGHT - For general lighting applications, a semiconductor chip produces near ultraviolet (UV) electromagnetic energy in a range of 380-420 nm, e.g. 405 nm. Semiconductor nanophosphors, typically doped semiconductor nanophosphors, are remotely positioned in an optic of a light fixture. Each phosphor is of a type or configuration that when excited by energy in the 380-420 nm range, emits light of a different spectral characteristic. The nanophosphors together produce light in the fixture output that is at least substantially white and has a color rendering index (CRI) of 75 or higher. In some examples, the fixture optic includes an optical integrating cavity. In the examples using doped semiconductor nanophosphors, the visible white light output exhibits a color temperature in one of the following ranges along the black body curve: 2,725±145° Kelvin; 3,045±175° Kelvin; 3,465±245° Kelvin; and 3,985±275° Kelvin.06-02-2011
20090278146PHOSPHOR ILLUMINATION OPTICS FOR LED LIGHT SOURCES - Devices and methods for collecting and distributing light from a light emitting diode (LED) emitter onto a phosphor layer to produce substantially white light are provided. The devices may include a reflective cavity with a reflective material, surrounding the reflective cavity, with a reflective side of the reflective material facing towards the inside of the reflective cavity. Further, the devices may incorporate an LED on one end of the reflective cavity and a phosphor layer on another end. Additionally, the devices may use a gradient index (GRIN) rod lens to refract light produced from the LED onto a phosphor surface with an LED on one end of the GRIN rod lens and the phosphor layer on the other end.11-12-2009
20100252848METHOD FOR FORMING AN LED LENS STRUCTURE AND RELATED STRUCTURE - A method for manufacturing an LED lens structure includes the following steps of disposing a lead frame with the LED chip into a mold, and injecting thermoplastic transparent material to a plane of the lead frame which is different from a plane that LED chip is mounted thereon to form a lens structure corresponding to the LED chip.10-07-2010
20090242921METHOD FOR COATING PHOSPHOR, APPARATUS TO PERFORM THE METHOD, AND LIGHT EMITTING DIODE COMPRISING PHOSPHOR COATING LAYER - A method of forming a phosphor coating layer on a light emitting diode (LED) chip using electrophoresis includes separating phosphor particles in a suspension according to a particle size, and coating the phosphor particles on a surface of the LED chip by sequentially depositing the separated phosphor particles on the surface of the LED chip according to the particle size. An apparatus to form a phosphor coating layer on an LED chip includes an electrophoresis bath to accommodate a suspension containing phosphor particles separated into layers according to a particle size, and electrodes disposed inside the electrophoresis bath. The electrodes may include a cathode electrode on which the LED chip may be arranged, and an anode electrode.10-01-2009
20120098020CERAMIC SUBSTRATE FOR MOUNTING A DEVICE, CERAMIC SUBSTRATE FOR MOUNTING AN LED, LED LAMP, HEADLIGHT AND ELECTRONIC PARTS - According to one embodiment, a ceramic substrate for mounting a device is provided. The ceramic substrate includes a through-hole and a recessed portion provided on at least one edge surface thereof.04-26-2012
20120098019LIGHT EMITTING DIODE PACKAGE HAVING HEAT DISSIPATING SLUGS - A light emitting diode package having heat dissipating slugs is provided. The light emitting diode package comprises first and second heat dissipating slugs formed of a conductive material and spaced apart from each other; a package main body coupled to the first and second heat dissipating slugs to support the first and second heat dissipating slugs; and a light emitting diode die electrically connected to the first and second heat dissipating slugs, wherein the respective first and second heat dissipating slugs are exposed to the outside through lower and side surfaces of the package main body. As such, the first and second heat dissipating slugs can be used as external leads.04-26-2012
20120098015OPTOELECTRONIC SEMICONDUCTOR COMPONENT - An optoelectronic semiconductor component includes a housing main body and at least one optoelectronic semiconductor chip mounted on the housing main body. In operation, the optoelectronic semiconductor chip emits primary radiation including an ultraviolet radiation fraction. The semiconductor component also includes a filter medium that absorbs the ultraviolet radiation fraction and is located at least in part between the semiconductor chip and the housing main body and/or between the semiconductor chip and an optical component.04-26-2012
20120098014SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light-emitting device includes a semiconductor layer with a multi-layer structure including an active layer, and having a first surface and a second surface opposite to the first surface, a plurality of ITO pillars formed on the second surface of the semiconductor layer, the second surface being exposed partially, a metal layer formed on the second surface of the semiconductor layer, the metal layer filling a space between the adjacent ITO pillars and covers the ITO pillars, wherein the second surface of the semiconductor layer is exposed from the space between the adjacent ITO pillars, and the metal layer is formed on the exposed second surface.04-26-2012
20120098013Light Emitting Device and Manufacturing Method of the Same - The present invention is directed to a light emitting device structured so as to increase the amount of light which is taken out in a certain direction after emitted from a light emitting element, and a method of manufacturing this light emitting device. An upper end portion of an insulating material 04-26-2012
20120098012ORGANIC LIGHT EMITTING DIODE DEVICE - An organic light emitting device is disclosed. An organic light emitting device according to one embodiment of the present invention comprises an anode; a first stack disposed on the anode and incorporating a first light emission layer comprising blue dopants for one host; a charge generation layer disposed on the first stack; a second stack disposed on the charge generation layer and incorporating blue and yellow dopants for one host or blue, red, and green dopants for one host; and a cathode disposed on the second stack.04-26-2012
20120098011ORGANIC LIGHT EMITTING DIODE DEVICE - An organic light emitting device is disclosed. An organic light emitting device according to one embodiment of the present invention comprises a reflection layer; an anode disposed on the reflection layer; a first stack disposed on the anode and comprising a first light emission layer; a charge generation layer disposed on the first stack; a second stack disposed on the charge generation layer and comprising a second light emission layer; and a cathode disposed on the second stack, the first light emission layer being disposed within about 120 to about 180 nm from a surface of the reflection layer and the second light emission layer being disposed within about 320 to about 380 nm from the surface of the reflection layer.04-26-2012
20120098007LED UNIT HAVING ELECTROCHROMIC ELEMENT - An LED unit includes an LED and an electrochromic element mounted on the LED. The LED includes a base, a light emitting die mounted on the base, a pair of leads electrically connected to the die and an encapsulant sealing the die. The encapsulant has a first area and a second area around the first area. The first area contains yellow phosphor therein, and the second area contains red phosphor therein. The electrochromic element has an opening through which the first area of the encapsulant is exposed. The second area of the encapsulant is covered by the electrochromic element. The electrochromic element can change its color when being electrified, thereby changing the color temperature of the light output from the LED unit.04-26-2012
20120098006LIGHT EMITTING DIODE PACKAGE WITH PHOTORESIST REFLECTOR AND METHOD OF MANUFACTURING - Optical emitters are fabricated by forming and shaping photoresist reflectors on a package wafer using lithography processes, and bonding Light-Emitting Diode (LED) dies to the package wafer.04-26-2012
20120098004LIGHT EMITTING DIODE PACKAGE - An LED package includes a substrate, an LED die and an encapsulation. The substrate includes a supporting surface and a protrusion extending from the supporting surface along a first direction. The protrusion includes a distal end portion extending along a second direction. The first direction and the second direction define a non-zero angle there between. The LED die is arranged on the supporting surface of the substrate. The encapsulation lies on the supporting surface and covers the LED die and the protrusion to increase a bonding connection between the encapsulation and the substrate.04-26-2012
20120098003LIGHT EMITTING DIODE PACKAGE - An exemplary light emitting diode (LED) package includes a substrate, an LED chip mounted on the substrate, and a wire. The LED chip includes a semiconductor structure and an electrode disposed on the semiconductor structure. The wire electrically connects the electrode of the LED chip to an electrical portion of the substrate. The wire has a first joint and a second joint connected to the substrate. The wire forms a first curved portion between the electrode and the first joint and a second curved portion between the first joint and the second joint.04-26-2012
20120098002Organic light emitting device - An organic light emitting device includes first and second electrodes facing each other, and an emission layer disposed between the first and second electrodes. The emission layer is configured to display light having a first color with a first wavelength region. The emission layer includes a host material configured to display light having a second color with a second wavelength region, and the second wavelength region is shorter than the first wavelength region. The emission layer also includes first and second color dopant materials mixed within the host material.04-26-2012
20120098001LIGHT EMITTING DIODE PACKAGE STRUCTURE - A light emitting diode (LED) package structure includes a substrate, at least one enclosure made of a transparent material, an LED, a first package material, and a second package material. The enclosure is disposed on a surface of the substrate, and forms a configuration area for disposing the LED therein. The first package material made of a transparent material is disposed in the configuration area and covers the LED. The second package material containing a fluorescent material covers the enclosure, the LED, and the first package material.04-26-2012
20120098000LIGHT EMITTING DIODE PACKAGE - An exemplary light emitting package includes a base, an LED chip mounted on the base, an encapsulant layer encapsulating the LED chip and a phosphor layer located above and separated from the LED chip. The phosphor layer includes a phosphor scattered portion and a clear portion without phosphor therein. An area of the phosphor scattered portion is smaller than the light emitting area of the encapsulant layer from which light emitted upwardly from the LED chip leaves the encapsulant layer.04-26-2012
20110220948DIODE HAVING HIGH BRIGHTNESS AND METHOD THEREOF - A light emitting diode includes a transparent substrate and a GaN buffer layer on the transparent substrate. An n-GaN layer is formed on the buffer layer. An active layer is formed on the n-GaN layer. A p-GaN layer is formed on the active layer. A p-electrode is formed on the p-GaN layer and an n-electrode is formed on the n-GaN layer. A reflective layer is formed on a second side of the transparent substrate. Also, a cladding layer of AIGaN is between the p-GaN layer and the active layer.09-15-2011
20090184334PHOTONIC CRYSTAL LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME - There is provided a photonic crystal light emitting device including: a light emitting structure including first and second conductivity type semiconductor layers and an active layer interposed therebetween; a transparent electrode layer formed on the second conductivity type semiconductor layer, the transparent electrode layer having a plurality of holes arranged with a predetermined size and period so as to form a photonic band gap for light emitted from the active layer, whereby the transparent electrode layer includes a photonic crystal structure; and first and second electrode electrically connected to the first conductivity type semiconductor layer and the transparent electrode layer, respectively. The photonic crystal light emitting device has a transparent electrode layer formed of a photonic crystal structure defined by minute holes, thereby improved in light extraction efficiency.07-23-2009
20100038668SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - The invention is directed to providing a smaller semiconductor device with a lower manufacturing cost and higher reliability and a method of manufacturing the same. A light emitting element (a LED die 02-18-2010
20100032700Light-Emitting Diodes on Concave Texture Substrate - A semiconductor device having light-emitting diodes (LEDs) formed on a concave textured substrate is provided. A substrate is patterned and etched to form recesses. A separation layer is formed along the bottom of the recesses. An LED structure is formed along the sidewalls and, optionally, along the surface of the substrate between adjacent recesses. In these embodiments, the surface area of the LED structure is increased as compared to a planar surface. In another embodiment, the LED structure is formed within the recesses such that the bottom contact layer is non-conformal to the topology of the recesses. In these embodiments, the recesses in a silicon substrate result in a cubic structure in the bottom contact layer, such as an n-GaN layer, which has a non-polar characteristic and exhibits higher external quantum efficiency.02-11-2010
20100032698PARTICLE FOR DISPLAY MEDIUM AND INFORMATION DISPLAY PANEL USING SAME - In the particles for display media used for an information display panel, in which at least one group of display media are sealed between two opposed substrates, at least one of two substrates being transparent, and, in which the display media, to which an electrostatic field is applied, are made to move so as to display information such as an image, a material having electric properties of a semiconductor is provided on a surface of the particles. According to the invention, since use is made of the particle whose surface has electric properties of a semiconductor, it is possible to maintain stably a surface charge of the particle for display media. As a result, it is possible to obtain an information display panel having a stable information display state such as an image.02-11-2010
20100264439LED PACKAGE STRUCTURE - A light emitting diode (LED) package structure includes a substrate having a chip disposal area and a recession, a chip installed in the chip disposal area, a silicon connecting element installed at the recession, and a silicon lens disposed at a position corresponding to the recession and coupled to the silicon connecting element, such that the silicon connecting element in the recession can assure the silicon lens to be secured onto the substrate to prevent the silicon lens from falling out.10-21-2010
20100264445SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.10-21-2010
20100264440SEMICONDUCTOR LIGHT EMITTING DEVICE - Disclosed are a semiconductor light emitting device. The semiconductor light emitting device comprises a light emitting structure comprising a IH-V group compound semiconductor, a reflective layer comprising mediums, which are different from each other and alternately stacked under the light emitting structure, and a second electrode layer under the reflective layer.10-21-2010
20100264438Light emitting device - The light emitting device has a light emitting element 10-21-2010
20090272998OPTOELECTRONIC SEMICONDUCTOR CHIP COMPRISING A WAVELENGTH CONVERSION SUBSTANCE, AND OPTOELECTRONIC SEMICONDUCTOR COMPONENT COMPRISING SUCH A SEMICONDUCTOR CHIP, AND METHOD FOR PRODUCING THE OPTOELECTRONIC SEMICONDUCTOR CHIP - A semiconductor chip comprises: a semiconductor body which comprises a semiconductor layer sequence suitable for emitting electromagnetic radiation of a first wavelength range from its front side; and a first wavelength-converting layer on at least one first partial region of the front side of the semiconductor body with a first wavelength conversion substance, which converts radiation of the first wavelength range into radiation of a second wavelength range, which is different from the first wavelength range, wherein at least one second partial region of the front side is free of the first wavelength-converting layer. An optoelectronic component comprising such a semiconductor chip and a method for producing the semiconductor chip are furthermore described.11-05-2009
20090283785LIGHT EMITTING DIODE PACKAGE - There is provided a light emitting diode (LED) package in which a phosphor layer encapsulating an LED chip is formed uniformly to facilitate a process. The LED package includes: a package body having a mounting area; a holding part mounted on the mounting area to expose a portion of the mounting area; an LED chip mounted on the mounting area, the LED chip surrounded by the holding part to emit light; and a phosphor layer held by the holding part to seal a space defined by the holding part, the phosphor layer converting a wavelength of the light from the LED chip.11-19-2009
20120267664NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME - A method for fabricating a nitride-based semiconductor light-emitting device includes a step (a) of forming a nitride-based semiconductor multi-layer structure (10-25-2012
20120267661LIGHT EMITTING DEVICE PACKAGE AND LIGHTING DEVICE WITH THE SAME - The present invention relates to a light emitting device package and a lighting device with the same. The light emitting device package comprises a package body having a first surface and a second surface, wherein the first surface has a mounting portion positioned thereon, and a through hole provided therein to pass through the first surface and the second surface, at least one pair of first electrodes on the first surface, at least one pair of second electrodes on the second surface connected to the first electrodes through the through hole respectively, a light emitting device on the mounting portion connected to the first electrodes electrically, a light wavelength conversion layer positioned on the light emitting device, and a protective layer on the light wavelength conversion layer for sealing the mounting portion.10-25-2012
20120267663LIGHT EMITTING DIODE PACKAGE AND MANUFACTURING METHOD THEREOF - A light emitting diode (LED) package refracting or reflecting light emitted from an LED chip is disclosed. The LED package may include a substrate, an LED chip mounted on the substrate, a lens unit formed by injecting an encapsulant adapted to enclose and protect the LED chip, and at least one refraction member disposed in the lens unit. The at least one refraction member may refract or reflect the light emitted from the LED chip.10-25-2012
20100102345LIGHT EMITTING DEVICE PACKAGE AND LIGHT UNIT HAVING THE SAME - Disclosed is an LED package. The LED package comprises a body comprising a cavity at one side thereof, at least one of lead frames comprising a bottom frame and a sidewall frame in the cavity, and a light emitting device electrically connected with the lead frames.04-29-2010
20100102343DISPLAY DEVICE - A display device is provided with a pair of a first electrode and a second electrode, at least one electrode of the first and second electrodes being transparent or translucent and a phosphor layer provided as being sandwiched between the first electrode and the second electrode, and at least one buffer layer provided as being sandwiched between the first or second electrode and the phosphor layer, and the phosphor layer has a plurality of pixel regions that are selectively allowed to emit light in a predetermined range thereof and non-pixel regions that divide at least one portion of the pixel regions, and wherein the buffer layer is sandwiched between the first or second electrode and the phosphor layer so that the size of an electric potential barrier between the first or second electrode and the phosphor layer via the buffer layer is made smaller than the size of a Schottky barrier between the first or second electrode and the phosphor layer that are directly made contact with each other without the buffer layer therebetween.04-29-2010
20100102341SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light emitting device includes: a transparent substrate including a first principal surface and a second principal surface opposite with the first principal surface, in which side surfaces between the first principal surface and the second principal surface are rough surfaces; and a semiconductor light emitting element that is arranged on the first principal surface of the transparent substrate and is composed by stacking nitride semiconductors on each other.04-29-2010
20120025255PACKAGE FOR LIGHT EMITTING ELEMENT ACCOMMODATION CONTAINING ALUMINA AND BARIUM - [PROBLEMS] To provide a package for light emitting element accommodation that realizes enhanced reflectance without application of a metal plating onto a ceramic. [MEANS FOR SOLVING PROBLEMS] There is provided a package for light emitting element accommodation comprising ceramic substrate (02-02-2012
20120025254SEMICONDUCTOR LIGHT EMITTING DEVICE SUBSTRATE STRIPS AND PACKAGED SEMICONDUCTOR LIGHT EMITTING DEVICES - Semiconductor light emitting device packaging methods include fabricating a substrate configured to mount a semiconductor light emitting device thereon. The substrate may include a cavity configured to mount the semiconductor light emitting device therein. The semiconductor light emitting device is mounted on the substrate and electrically connected to a contact portion of the substrate. The substrate is liquid injection molded to form an optical element bonded to the substrate over the semiconductor light emitting device. Liquid injection molding may be preceded by applying a soft resin on the electrically connected semiconductor light emitting device in the cavity. Semiconductor light emitting device substrate strips are also provided.02-02-2012
20120025253ORGANIC LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING DEVICE WITH THE ORGANIC LIGHT-EMITTING ELEMENT - The present invention provides a white organic light-emitting element high in the emission efficiency. In particular, the invention provides a white organic light-emitting element that has an emission spectrum having peaks in the respective wavelength regions of red color, green color and blue color and is high in the emission efficiency.02-02-2012
20120025250SEMICONDUCTOR LIGHT-EMITTING DEVICE AND THE MANUFACTURING METHOD THEREOF - This application provides a semiconductor light-emitting device and the manufacturing method thereof. The semiconductor light-emitting device comprises a semiconductor light-emitting structure and a thinned substrate. The semiconductor light-emitting structure comprises a plurality of semiconductor layers and a plurality of first channels, wherein a plurality of first channels has a predetermined depth that penetrating at least two layers of the plurality of semiconductor layers.02-02-2012
20120025249LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE - Provided are a light emitting device and a light emitting device package. According to the light emitting device, a light emitting part and an electro-static discharge (ESD) protection part are disposed on a conductive support member. A connection layer electrically connects a first conducitve type semiconductor layer of the light emitting part to a second conductive type semiconductor layer of the ESD protection part. A ptrtection member is disposed on the connection layer and the ESD protection layer.02-02-2012
20120025248SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME - Provided is a semiconductor light emitting device. The semiconductor light emitting device includes a conductive substrate, a p-type electrode disposed on the conductive substrate, a transparent electrode layer disposed on the p-type electrode, a light emitting structure comprising a p-type semiconductor layer, an active layer, and an n-type semiconductor layer, which are sequentially stacked on the transparent electrode layer, and an n-type electrode disposed on the n-type semiconductor layer. The light emitting structure is disposed on a top middle of the transparent electrode layer to allow a side of the light emitting structure to be spaced from an edge of the transparent electrode layer. The transparent electrode layer has an uneven surface at an outer portion of the light emitting structure.02-02-2012
20120025247COMPONENT FOR LIGHT-EMITTING DEVICE, LIGHT-EMITTING DEVICE AND PRODUCING METHOD THEREOF - A component for a light-emitting device includes a sealing resin layer that is capable of sealing in a light emitting diode, a fluorescent layer that is formed on one face of the sealing resin layer and is capable of emitting fluorescent light, and a reflection layer that is provided on the other face of the sealing resin layer so as to avoid a region where the sealing resin layer seals in the light emitting diode and is capable of reflecting the light.02-02-2012
20120025246SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - Disclosed are a semiconductor light emitting device and a method of manufacturing the same. The method includes providing a substrate having first and second main surfaces opposing each other and forming a first uneven structure in the first main surface, forming a sacrificial layer on the first main surface of the substrate, forming a mask having open regions on the sacrificial layer so as to expose a portion of an upper surface of the sacrificial layer, forming a second uneven structure in the substrate by etching the sacrificial layer and the substrate through the open regions, removing the sacrificial layer and the mask from the substrate, and forming a light emitting stack on the first and second uneven structures of the substrate.02-02-2012
20120025242SURFACE MOUNTED LED STRUCTURE AND PACKAGING METHOD OF INTEGRATING FUNCTIONAL CIRCUITS ON A SILICON - The present invention relates to a surface mounted LED structure of integrating functional circuits on a silicon substrate, comprising the silicon substrate and an LED chip. Said silicon substrate has an upper surface of planar structure without grooves. An oxide layer covers the upper surface of the silicon substrate, and metal electrode layers are arranged in the upper surface of the oxide layer. The upper surfaces of said metal electrode layers are arranged with metal bumps, and the LED chip is flip-chip mounted to the silicon substrate. Two conductive metal pads are arranged on the lower surface of said silicon substrate, said conductive metal pads are electrically connected to the metal electrode layers on the upper surface of the silicon substrate by a metal lead arranged on the side wall of the silicon substrate. A heat conduction metal pad is arranged on the corresponding lower, surface of the silicon substrate just below the LED chip. Peripheral functional circuits required by LED are integrated on the upper surface of said silicon substrate. The structure of the present invention has advantages of good heat dissipation effect and small volume, and direct integration of functional circuits such as protection and drive circuits etc. in the silicon substrate achieves large-scale production package of wafer level, reducing the cost of packaging and lighting fixture.02-02-2012
20120025241SURFACE MOUNTED LED PACKAGING STRUCTURE AND METHOD BASED ON A SILICON SUBSTRATE - A surface mounted LED packaging structure based on a silicon substrate includes the silicon substrate, an LED chip, an annular convex wall and a lens. The silicon substrate has an upper surface of planar structure and without grooves. An oxide layer covers the upper surface of the silicon substrate. Metal electrode layers are arranged in the upper surface of the oxide layer, and the upper surfaces of the metal electrode layers are arranged with metal bumps. Vias through the silicon substrate are provided under the metal electrode layers. An insulating layer covers the inner wall of the vias and a part of the lower surface of the silicon substrate. A metal connection layer covers the insulating layer surface within the vias. Two conductive metal pads are respectively arranged under the lower surface of the silicon substrate and insulated from the silicon substrate. A heat conduction metal pad is arranged on the lower surface of the silicon substrate. The LED chip is flip-chip mounted on the silicon substrate. The annular convex wall and the lens cause the LED chip and the metal electrode layers therein to be isolated from environment. The structure of the present invention has its advantages of good heat dissipation effect and small volume, while packaging without gold wires makes the structure highly reliable and achieves large-scale production of wafer level, resulting in the reduction of the packaging cost.02-02-2012
20120025239NANOCOMPOSITES AND LIGHT EMITTING DEVICE PACKAGE INCLUDING THE SAME - Provided are nanocomposites and a light emitting device package including the same. The nanocomposites include nanoparticles, and silicon compounds bonded to surfaces of the nanoparticles and expressed by a specific chemical formula. The nanocomposites can be dispersed evenly in various matrices without the nanoparticles being agglutinated.02-02-2012
20120025238LED PACKAGE - An LED package comprises a substrate, an LED die, and an encapsulating layer. The substrate has circuit formed thereon. The LED die is arranged on the substrate and electrically connected to the circuit of the substrate. The encapsulating layer covers the LED die and at least a part of the substrate. The encapsulating layer and the substrate are made of cycloaliphatic epoxide.02-02-2012
20120025236LIGHT EMITTING DIODE SUBSTRATE, METHOD OF MAKING SAME AND LIGHT EMPLOYING SAME - An LED light source (02-02-2012
20120025235LIGHTING DEVICES THAT COMPRISE ONE OR MORE SOLID STATE LIGHT EMITTERS - A lighting device, comprising a solid state light emitter and a removable encapsulant element. A lighting device element, comprising a solid state light emitter and an encapsulant holding element configured to releasably hold a removable encapsulant element. A lighting device component, comprising a removable encapsulant element. A method, comprising removing a first removable encapsulant element from a lighting device that comprises at least a first solid state light emitter and inserting a second removable encapsulant element into the lighting device. An encapsulant element comprising a substantially transparent first material and a luminescent material within the first material.02-02-2012
20090189173SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF - To provide a liquid crystal display device having high quality display by obtaining a high aperture ratio while securing a sufficient storage capacitor (Cs), and at the same time, by dispersing a load (a pixel writing-in electric current) of a capacitor wiring in a timely manner to effectively reduce the load. A scanning line is formed on a different layer from a gate electrode and the capacitor wiring is arranged so as to be parallel with a signal line. Each pixel is connected to the individually independent capacitor wiring via a dielectric. Therefore, variations in the electric potential of the capacitor wiring caused by a writing-in electric current of a neighboring pixel can be avoided, whereby obtaining satisfactory display images.07-30-2009
20090166655LIGHT-EMITTING DIODE STRUCTURE - An LED structure includes a first conductive body, a first insulating body on the first conductive body, a second conductive body on the first insulating body, and an LED. The first conductive body has a conducting portion upward projected from the insulating body and the second conductive body, so that a conducting section at a top of the conducting portion is exposed at the insulating sleeve portion. The LED is mounted on the conducting section of the first conductive body and electrically connected to the second conductive body. With these arrangements, the LED structure may be mounted on a power supply board without the need of distinguishing the polarities of electrodes, and can therefore be easily mounted to and dismounted from the power supply board and be conveniently replaced when necessary.07-02-2009
20090189170Light emitting diode - A light emitting diode includes a casing, comprising a concave accommodation space; a lead frame, disposed in the casing, wherein the lead frame has at least two individual leads which extend into the accommodation space; a light emitting chip, disposed in the accommodation space and electrically connected to the leads; and an encapsulating material, inside the accommodation space. The light emitting diode emits light along an optical axis. The ratio of a first tilt angle between the first reflecting wall and the optical axis, and a second tilt angle to a second tilt angle between the second reflecting wall and the optical axis is no more than 4.07-30-2009
20090189171Light emitting diode package - An LED package includes a housing, a substrate, a pad frame and an LED chip. The housing includes a plastic material, and has a recess with an opening at a top of the housing. The substrate includes substantially the same material with the housing. The pad frame includes conductive material, and is inserted on the substrate, and is fixed between the housing and the substrate. The LED chip is mounted on the pad frame and is disposed at a center of the recess. The housing is protruded and extended to a lower portion of the LED chip. Thicknesses of the housing's sidewalls facing to each other through the recess are substantially the same with each other.07-30-2009
20090189169Light emitting diode lamp - A light emitting diode lamp includes a heat sink, a socket, a light emitting module, a holder and a lens. The socket and the holder are respectively positioned opposite sides of the heat sink. The light emitting module is combined with the heat sink and has a light emitting diode unit. The lens is mounted on the light emitting diode unit and combined inside the holder. The heat sink includes a substrate and a plurality of heat dissipating fins. The substrate has a plurality of extending arms in a manner that a slot is formed between two neighboring extending arms. A plurality of heat dissipating fins is inserted into the corresponding slots. One of opposite sidewall surfaces of each extending arm is against one of opposite surfaces of each heat dissipating fin. Thereby, there is no need of producing a heat sink by soldering.07-30-2009
20090189168White Light Emitting Device - A white light emitting device is provided, which includes a light emitting element that emits a first light having a wavelength between 300 nm and 410 nm; and a fluorescent layer positioned over the light emitting element. The fluorescent layer includes a fluorescent whitening agent capable of absorbing at least a portion of the first light, and subsequently emitting a second light having a wavelength between 420 nm and 510 nm; and a photoluminescent material capable of absorbing at least a portion of the first light and at least a portion of the second light, and subsequently emitting a third light having a wavelength longer than wavelengths of the first light and the second light.07-30-2009
20080272387ADAPTING SHORT-WAVELENGTH LED'S FOR POLYCHROMATIC, BROADBAND, OR "WHITE" EMISSION - An adapted LED is provided comprising a short-wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction. The potential well(s) are typically quantum well(s). The adapted LED may be a white or near-white light LED. The re-emitting semiconductor construction may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the potential well(s). In addition, graphic display devices and illumination devices comprising the adapted LED according to the present invention are provided.11-06-2008
20080272383SIDE MOUNTABLE SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGES, PANELS AND METHODS OF FORMING THE SAME - Side-mountable semiconductor light emitting device packages include an electrically insulating substrate having a front face and a back face and a side face extending therebetween. The side face is configured for mounting on an underlying surface. An electrically conductive contact is provided proximate an edge of the substrate on the back face of the substrate and/or on a recessed region on the side face of the substrate. The contact is positioned to be positioned proximate an electrical connection region of the underlying surface when the semiconductor light emitting device package is side mounted on the underlying surface. A conductive trace extends along the front face of the substrate and is electrically connected to the contact. A semiconductor light emitting device is mounted on the front face of the substrate and electrically connected to the conductive trace.11-06-2008
20100176413LIGHT-EMITTING DIODE DEVICE INCLUDING A MULTI-FUNCTIONAL LAYER - A light-emitting diode device includes: a substrate; a light-emitting layered structure formed on the substrate; a multi-functional layer having a first main portion and formed on the light-emitting layered structure for spreading current laterally and for reflecting light emitted from the light-emitting layered structure; and first and second electrodes electrically coupled to the light-emitting layered structure. The first electrode is formed on the light-emitting layered structure and has a first electrode main part. The first main portion of the multi-functional layer is aligned below and is provided with a size larger than that of the first electrode main part.07-15-2010
20090085050ISLAND SUBMOUNT AND A METHOD THEREOF - An island submount used for carrying at least one light-emitting element having at least one electrical contact. The island submount includes a substrate, at least one island structure having a top surface and an inclined surface, and a conductive layer. The island structure is located on the substrate and corresponds to the electrical contact. The conductive layer is formed on the surface of the island structure and at least covers the top surface, so as to be electrically connected with the electrical contact. The island submount is capable of enhancing the light extraction efficiency of the light-emitting element, and avoids the energy loss due to re-absorption when the light emerging from below the light-emitting element is reflected back to the light-emitting element.04-02-2009
20110169038MOLDED CHIP FABRICATION METHOD AND APPARATUS - A method and apparatus for coating a plurality of semiconductor devices that is particularly adapted to coating LEDs with a coating material containing conversion particles. One method according to the invention comprises providing a mold with a formation cavity. A plurality of semiconductor devices are mounted within the mold formation cavity and a curable coating material is injected or otherwise introduced into the mold to fill the mold formation cavity and at least partially cover the semiconductor devices. The coating material is cured so that the semiconductor devices are at least partially embedded in the cured coating material. The cured coating material with the embedded semiconductor devices is removed from the formation cavity. The semiconductor devices are separated so that each is at least partially covered by a layer of the cured coating material. One embodiment of an apparatus according to the invention for coating a plurality of semiconductor devices comprises a mold housing having a formation cavity arranged to hold semiconductor devices. The formation cavity is also arranged so that a curable coating material can be injected into and fills the formation cavity to at least partially covering the semiconductor devices.07-14-2011
20110169036COMPOSITE HIGH REFLECTIVITY LAYER - A high efficiency light emitting diode with a composite high reflectivity layer integral to said LED to improve emission efficiency. One embodiment of a light emitting diode (LED) chip comprises an LED and a composite high reflectivity layer integral to the LED to reflect light emitted from the active region. The composite layer comprises a first layer, and alternating plurality of second and third layers on the first layer, and a reflective layer on the topmost of said plurality of second and third layers. The second and third layers have a different index of refraction, and the first layer is at least three times thicker than the thickest of the second and third layers. For composite layers internal to the LED chip, conductive vias can be included through the composite layer to allow an electrical signal to pass through the composite layer to the LED.07-14-2011
20090146168HIGH EFFICIENCY LED WITH MULTI-LAYER REFLECTOR STRUCTURE AND METHOD FOR FABRICATING THE SAME - Provided are a high efficiency light emitting diode and a method for fabricating the same, in which a multi-layer reflector is laminated to a surface emission type light emitting diode to improve the efficiency of a light emitting diode. A high efficiency reflector is integrated on the light emitting diode using a dry etching process and a wet etching process. Although light produced from an active layer when applying a current thereto is emitted in several directions, the reflectors formed both sides of the active layer reflect the emitted light toward a surface of a semiconductor substrate, thus improving the light efficiency. Compared with the existing light emitting diode, the structure of the proposed light emitting diode is more efficient and therefore it can be used as a light source having low power consumption and high brightness. Also, the light emitting diode can be fabricated using the existing semiconductor process, thus reducing the complexity of the fabricating process.06-11-2009
20110169034PACKAGE STRUCTURE OF PHOTOELECTRONIC DEVICE AND FABRICATING METHOD THEREOF - A package structure includes a silicon substrate, a first insulating layer, a reflective layer, a second insulating layer, a first conductive layer, a second conductive layer and a die. The silicon substrate has a first surface and an opposite second surface. The first surface has a reflective opening, and the second surface has two electrode via holes connected to the reflective opening and a recess disposed outside the electrode via holes. The first insulating layer overlays the first surface, the second surface and the recess. The reflective layer is disposed on the reflective opening. The second insulating layer is disposed on the reflective layer. The first conductive layer is disposed on the second insulating layer. The second conductive layer is disposed on the second surface and inside the electrode via holes. The die is fixed inside the reflective opening and electrically connected to the first conductive layer.07-14-2011
20110169033LEAD, WIRING MEMBER, PACKAGE PART, METAL PART PROVIDED WITH RESIN AND RESIN-SEALED SEMICONDUCTOR DEVICE, AND METHODS FOR PRODUCING SAME - A semiconductor device and manufacturing method therefor, provided with the aims of constraining resin burr formation while having good electric connectivity and joining strength, and LED device, provided with the aim of improving adhesion between silicon resin and leads while having good luminescent characteristics.07-14-2011
20100109038LIGHT EMITTING DIODE WITH INTEGRAL PARABOLIC REFLECTOR - The dielectric casing of a light emitting diode (LED) incorporates an integral parabolic reflector system which redirects light in a collimated pattern deflected at significant angles relative to the axis of symmetry of the LED.05-06-2010
20090121247SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes: a base portion having a concaved portion; a light emitting element provided in the concaved portion; a resin filled in the concaved portion; and a phosphor contained resin layer containing a wave converting substance and provided to close an opening portion of the concaved portion. The phosphor contained resin layer has a lower thermal expansion coefficient than the resin filled in the concaved portion.05-14-2009
20090121246LED with current confinement structure and surface roughening - An LED having a p-type layer of material with an associated p-contact, an n-type layer of material with an associated n-contact and an active region between the p-type layer and the n-type layer, includes a confinement structure that is formed within one of the p-type layer of material and the n-type layer of material. The confinement structure is generally aligned with the contact on the top and primary emission surface of the LED and substantially prevents the emission of light from the area of the active region that is coincident with the area of the confinement structure and the top-surface contact. The LED may include a roughened emitting-side surface to further enhance light extraction.05-14-2009
20090121244LED packaging structure and production method thereof - An LED packaging structure and a production method thereof; the LED packaging structure includes an LED die placed on a metal substrate and packed with seal in conjunction with a transparent substrate to deliver advantages of compact, simplified process and long service life and provide significant advancement and industrial value when compared to the prior art.05-14-2009
20090057702SEMICONDUCTOR LIGHT-EMITTING DEVICE - The invention discloses a semiconductor light-emitting device. The semiconductor light-emitting device according to the invention includes a substrate, a multi-layer structure, at least one electrode structure, and a light reflector. The substrate has an upper surface. The multi-layer structure is formed on the upper surface of the substrate. The multi-layer structure includes a light-emitting region and at least one semiconductor material layer. The multi-layer structure also has a top surface. The at least one electrode structure is formed on the top surface of the multi-layer structure. The light reflector is formed on the top surface of the multi-layer structure.03-05-2009
20110169029OPTOELECTRONIC COMPONENT AND PACKAGE FOR AN OPTOELECTRONIC COMPONENT - Optoelectronic components with a semiconductor chip, which is suitable for emitting primary electromagnetic radiation, a basic package body, which has a recess for receiving the semiconductor chip and electrical leads for the external electrical connection of the semiconductor chip, and a chip encapsulating element, which encloses the semiconductor chip in the recess. The basic package body is at least partly optically transmissive at least for part of the primary radiation and an optical axis of the semiconductor chip runs through the basic package body. The basic package body comprises a luminescence conversion material, which is suitable for converting at least part of the primary radiation into secondary radiation with wavelengths that are at least partly changed in comparison with the primary radiation.07-14-2011
20110169030LIGHT EMITTING DIODE WITH HIGH ASPECT RATIO SUBMICRON ROUGHNESS FOR LIGHT EXTRACTION AND METHODS OF FORMING - The surface morphology of an LED light emitting surface is changed by applying a reactive ion etch (RIE) process to the light emitting surface. High aspect ratio, submicron roughness is formed on the light emitting surface by transferring a thin film metal hard-mask having submicron patterns to the surface prior to applying a reactive ion etch process. The submicron patterns in the metal hard-mask can be formed using a low cost, commercially available nano-patterned template which is transferred to the surface with the mask. After subsequently binding the mask to the surface, the template is removed and the RIE process is applied for time duration sufficient to change the morphology of the surface. The modified surface contains non-symmetric, submicron structures having high aspect ratio which increase the efficiency of the device.07-14-2011
20110169026Light Guide for LED Source - A device to emit light includes a light emitting diode (LED) die and a light guide coupled to the LED die. The light guide includes a first material having a first index of refraction with a plurality of apertures arranged in a grid. A second material having a second index of refraction that is larger than the first index of refraction fills the plurality of apertures. Each aperture extends from a first end adjacent the LED die to a larger second end. The first end may be a circle of approximately 1 to 2 μm in diameter. The distance between the first and second ends may be from approximately 10 to 20 μm. Each aperture may be in the form of a frustrated cone having an included angle between the sides from approximately 3 to 7 degrees. The light guide may be formed on a transparent substrate.07-14-2011
20110266583PACKAGE FOR LIGHT EMITTING DEVICE - A semiconductor light emitting package is discussed, which includes a base having a top surface with a flat portion; a semiconductor light emitting device on the base; an electrical circuit layer electrically connected to the semiconductor light emitting device; a screen member having an opening and disposed on the base around the semiconductor light emitting device, the screen member shaped into a substantially circle; and an optical member formed of a light transmissive material such that light emitted from the semiconductor light emitting device passes therethrough, wherein a bottom surface of the screen member is positioned higher than the semiconductor light emitting device, an edge portion of the optical member is in contact with the screen member, a top surface of the optical member is substantially parallel to the flat portion of the base.11-03-2011
20110266582PACKAGE FOR LIGHT EMITTING DEVICE - A semiconductor light emitting package includes a base having a top surface with a flat portion, the base shaped into a substantially circle; a plurality of semiconductor light emitting devices on the base; an electrical circuit layer electrically connected to the plurality of semiconductor light emitting device; a plurality of screen members on the base; and a plurality of optical members formed of a light transmissive material such that light emitted from at least one of the semiconductor light emitting devices passes therethrough, wherein each of the screen members has an opening surrounding at least one of the semiconductor light emitting device, each opening of the screen members is shaped into a substantially circle, a diameter of the base is larger than a diameter of the opening of the screen members, and an edge portion of the optical members is in contact with one of the screen members.11-03-2011
20110266576Optoelectronic Semiconductor Component - An optoelectronic semiconductor device at least one radiation-emitting semiconductor chip (11-03-2011
20110266573SEMICONDUCTOR FOR LIGHT EMITTING DEVICE - Disclosed is a semiconductor light emitting device. The light emitting device includes a first conductive type semiconductor layer; an active layer on the first conductive type semiconductor layer; and a first electrode pad including a plurality of reflective layers on the first conductive type semiconductor layer.11-03-2011
20110266571Semiconductor Arrangement - According to at least one embodiment of the semiconductor arrangement, the latter comprises a mounting side, at least one optoelectronic semiconductor chip with mutually opposing chip top and bottom, and at least one at least partially radiation-transmissive body with a body bottom, on which the semiconductor chip is mounted such that the chip top faces the body bottom. Moreover, the semiconductor arrangement comprises at least two electrical connection points for electrical contacting of the optoelectronic semiconductor chip, wherein the connection points do not project laterally beyond the body and with their side remote from the semiconductor chip delimit the semiconductor arrangement on the mounting side thereof.11-03-2011
20110266569LED WAFER WITH LAMINATED PHOSPHOR LAYER - An LED wafer with a growth substrate is attached to a carrier substrate by, for example, a heat-releasable adhesive so that the LED layers are sandwiched between the two substrates. The growth substrate is then removed, such as by laser lift-off. The exposed surface of the LED layers is then etched to improve light extraction. A preformed phosphor sheet, matched to the LEDs, is then affixed to the exposed LED layer. The phosphor sheet, LED layers, and, optionally, the carrier substrate are then diced to separate the LEDs. The LED dice are released from the carrier substrate by heat or other means, and the individual LED dice are mounted on a submount wafer using a pick-and-place machine. The submount wafer is then diced to produce individual LEDs. The active layer may generate blue light, and the blue light and phosphor light may generate white light having a predefined white point.11-03-2011
20110169027Patterning Method of Metal Oxide Thin Film Using Nanoimprinting, and Manufacturing Method of Light Emitting Diode - Disclosed are a patterning method of a metal oxide thin film using nanoimprinting, and a manufacturing method of a light emitting diode (LED). The method for forming a metal oxide thin film pattern using nanoimprinting includes: coating a photosensitive metal-organic material precursor solution on a substrate; preparing a mold patterned to have a protrusion and depression structure; pressurizing the photosensitive metal-organic material precursor coating layer with the patterned mold; forming a cured metal oxide thin film pattern by heating the pressurized photosensitive metal-organic material precursor coating layer or by irradiating ultraviolet rays to the pressurized photosensitive metal-organic material precursor coating layer while being heated; and removing the patterned mold from the metal oxide thin film pattern, and selectively further includes annealing the metal oxide thin film pattern. Within this, there is provided a method for forming a metal dioxe thin film pattern using nano imprinting, which makes it possible to simplify the process for forming the pattern since the process of separately applying the ultraviolet resin to be used as the resist can be omitted, and forms a micro/nano composite pattern through a single imprint process.07-14-2011
20090146165LED Structure - A light emitting device, a wafer for making the same, and method for fabricating the same are disclosed. The device and wafer include a first layer of a first conductivity type, an active layer, and a layer of a second conductivity type. The active layer overlies the first layer, the active layer generating light. The second layer overlies the active layer, the second layer having a first surface in contact adjacent to the active layer and a second surface having a surface that includes features that scatter light striking the second surface. A layer of transparent electrically conducing material is adjacent to the second surface and covered by a first layer of a dielectric material that is transparent to the light generated by the active layer. A mirror layer that has a reflectivity greater than 90 percent is deposited on the first layer of dielectric material.06-11-2009
20090146171SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light-emitting device and a method for manufacturing the same can include a soft silicon resin encapsulating an LED chip with a thin overcoat of microparticles located on the silicon resin to prevent dirt and dust from attaching to the silicon resin. The semiconductor light-emitting device can include a base board having at least one LED chip, a reflector fixed on the base board so as to enclose the LED chip, a soft silicon resin having a tacky surface disposed in the reflector, and an overcoat of microparticles on the silicon resin. Thus, manufacturing lead time can be reduced because the microparticles can attach to the silicon resin in a thin and single layer and a solidifying process for an extra layer on top of the silicon resin is not necessary. The overcoat of microparticles can prevent dirt and dust from attaching to the silicon resin, and can decrease optical variability in an inclined direction from an optical axis of the device.06-11-2009
20090095968Image Sensor and Method for Manufacturing the Same - Provided are an image sensor and a method for manufacturing the same. A trench can be formed through metal interconnection layers of the image sensor in a region corresponding to a light receiving device for each unit pixel. A passivation layer pattern can be provided at sidewalls of the trench to inhibit light incident into the metal interconnection layers and reduce cross-talk and noise. A filler material can be provided to fill the trench. A color filter layer and microlens can be formed on the filler material. The filler material can be, for example, a polymer, an oxide layer, or a photoresist.04-16-2009
20110260188LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM - Disclosed are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on, a light transmissive substrate having a refractive index lower than a refractive index of a compound semiconductor layer, and a mirror structure layer having a structure in which a first mirror layer having a first refractive index and a second mirror layer having a second refractive index different from the first refractive index are alternately stacked on each other. The first mirror layer has a thickness of W·λ/(4·n10-27-2011
20110260187LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM - A light emitting device according to the embodiment includes a first semiconductor layer; an active layer to generate a light on the first semiconductor layer; a second conductive semiconductor layer on the active layer; a transparent electrode layer on the second conductive semiconductor layer; and a multiple thin film mirror on the transparent electrode layer, the multiple thin film mirror being formed by repeatedly stacking a first thin film layer having a first refractive index and a second thin film layer having a second refractive index different from the first refractive index by at least one time, wherein the second conductive semiconductor layer has a thickness satisfying: 2·Φ1+Φ2=N·2π±Δ, (0≦Δ≦π/2) in which, Φ1 is a phase shift occurring when a light, which travels in a vertical direction, passes through the second conductive semiconductor layer and is expressed as Φ1=2πnd/λ (n is a refractive index of the light, λ is a wavelength of the light, and d is a thickness of the second conductive semiconductor layer), Φ2 is a phase shift occurring when the light is reflected from one of the transparent electrode layer and the multiple thin film mirror, and N is a natural number.10-27-2011
20080237621LIGHT EMITTING DEVICE AND METHOD OF PRODUCING THE SAME - To provide a light emitting device that is improved in intensity of light emitted from a light outgoing surface and has excellent heat releasing property, the light emitting device according to the present invention includes an LED chip 10-02-2008
20080237619LED with Porous Diffusing Reflector - In one embodiment, an AlInGaP LED includes a bottom n-type layer, an active layer, a top p-type layer, and a thick n-type GaP layer over the top p-type layer. The thick n-type GaP layer is then subjected to an electrochemical etch process that causes the n-type GaP layer to become porous and light-diffusing. Electrical contact is made to the p-GaP layer under the porous n-GaP layer by providing metal-filled vias through the porous layer, or electrical contact is made through non-porous regions of the GaP layer between porous regions. The LED chip may be mounted on a submount with the porous n-GaP layer facing the submount surface. The pores and metal layer reflect and diffuse the light, which greatly increases the light output of the LED. Other embodiments of the LED structure are described.10-02-2008
20100025715Ultra Dark Polymer - A method and a material for creating an antireflective coating on an integrated circuit. A preferred embodiment comprises applying a dark polymer material on a reflective surface, curing the dark polymer material, and roughening a top surface of the dark polymer material. The roughening can be achieved by ashing the dark polymer material in an ash chamber. The dark polymer material, preferably a black matrix resin or a polyimide black matrix resin, when ashed in an oxygen rich atmosphere for a short period of time, forms a surface that is capable of absorbing light as well as randomly refracting light it does not absorb. A protective cap layer may be formed on top of the ashed dark polymer material to provide protection for the dark polymer material.02-04-2010
20090152579LIGHT-EMITTING DIODE AND LIGHT-EMITTING DIODE LAMP - The present invention provides a light-emitting diode (06-18-2009
20080265266Housing for an Optoelectronic Component, Optoelectronic Component and Method for the Production of an Optoelectronic Component - A housing for an optoelectronic component which includes a carrier with a chip mounting surface is disclosed. An optical element which is produced separately from the carrier is applied to the carrier. The chip mounting surface and the optical element define a parting plane, the parting plane between carrier and optical element being arranged in the plane of the chip mounting surface. Also disclosed is an optoelectronic component having a housing of this type and a method for producing an optoelectronic component of this type.10-30-2008
20080210962Illumination Device - An illumination device is specified which comprises an optoelectronic component having a housing body and at least one semiconductor chip provided for generating radiation, and a separate optical element, which is provided for fixing at the optoelectronic component and has an optical axis, the optical element having a radiation exit area and the radiation exit area having a concavely curved partial region and a convexly curved partial region, which at least partly surrounds the concavely curved partial region at a distance from the optical axis, the optical axis running through the concavely curved partial region.09-04-2008
20080210965Light-emitting diode incorporation the packing nano particules with high refractive index - Light-emitting diode packages with very high light extraction efficiency are disclosed. The packages utilize the intrinsically optically transparent nano particles with high refractive index, by the correct way of homogeneous packing, or adding additional transparent substance in the interspaces among the nano particles furthermore, to form a nano light-extracting layer with high refractivity which contacts optically with the diode surface to extract the light. By this method, because the refractive index difference between the light-extracting layer and the diode crystal turns to be small, the critical internal total reflection angle of the light on the interface increases much, it means large reduction on the internal total reflection of the light. Then the light extraction efficiency of the package can be increased significantly.09-04-2008
20100123151LIGHT-EMITTING DEVICE - A light-emitting device in accordance with an embodiment of the present invention includes a semiconductor light-emitting element, and a member in the periphery of the semiconductor light-emitting element is made of a material whose color, transparency or adhesiveness changes over time as it is subjected to light or heat emitted by the semiconductor light-emitting element.05-20-2010
20090085052GAN TYPE LIGHT EMITTING DIODE DEVICE AND METHOD OF MANUFACTURING THE SAME - The present invention relates to a GaN type LED device and a method of manufacturing the same. More particularly, there are provided a GaN type LED device including an LED chip; and a submount eutectic-bonded with the LED chip through an adhesive layer, wherein the adhesive layer is configured by soldering a plurality of metallic layers in which a first metallic layer and a second metallic layer are sequentially stacked, and the second metallic layer is formed in a paste form.04-02-2009
20110254037Light-Emitting Device and Electronic Device - A low-power light-emitting device which can be manufactured in simple steps and is suitable for increasing definition and the size of a substrate is provided. The light-emitting device includes a layer for blocking visible light; a conductive layer that partly overlaps with the layer for blocking visible light; a color filter layer that includes an opening over the layer for blocking visible light; a first electrode layer for transmitting visible light that is connected to the conductive layer through the opening, over the color filter layer; an insulating partition over the first electrode layer overlapping with the opening; a layer containing an organic compound over the first electrode layer and the partition; and a second electrode layer over the layer containing an organic compound. The layer containing an organic compound includes a layer containing a donor substance and an acceptor substance and a layer containing a light-emitting organic compound.10-20-2011
20100084677Oled or group of adjacent oleds with a light-extraction layer efficient over a large range of wavelengths - An organic light emitting diode comprises, between a bottom electrode and a top electrode, an organic light-emitting layer and a light-extraction enhancement layer made of a dielectric material. According to the invention, if n04-08-2010
20100320491SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor light emitting device comprises a first electrode contacting layer, a first active layer on the first electrode contacting layer, a second electrode contacting layer on the first active layer, a second active layer on the second electrode contacting layer, and a third electrode contacting layer on the second active layer.12-23-2010
20110133238LIGHT-EMITTING DIODE AND METHOD FOR FABRICATION THEREOF - A transparent-substrate light-emitting diode (06-09-2011
20100181584LASER LIFT-OFF WITH IMPROVED LIGHT EXTRACTION - A light emitting device includes a stack of semiconductor layers defining a light emitting pn junction and a dielectric layer disposed over the stack of semiconductor layers. The dielectric layer has a refractive index substantially matching a refractive index of the stack of semiconductor layers. The dielectric layer has a principal surface distal from the stack of semiconductor layers. The distal principal surface includes patterning, roughening, or texturing configured to promote extraction of light generated in the stack of semiconductor layers.07-22-2010
20090309112Yellow-Emitting Phosphor and White Light Emitting Device Using the Same - A novel yellow-emitting phosphor is represented by the general formula: Ca12-17-2009
20090294784Nitride Semiconductor Light Emitting Element and Method for Producing Nitride Semiconductor Light Emitting Element - Provided are a nitride semiconductor light emitting element which does not suffer a damage on a light emitting region and has a high luminance without deterioration, even though the nitride semiconductor light emitting element is one in which electrodes are disposed opposite to each other and an isolation trench for chip separation and laser lift-off is formed by etching; and a manufacturing method thereof. An n-type nitride semiconductor layer 12-03-2009
20090289268LIGHT EMITTING APPARATUS AND SEMICONDUCTOR APPARATUS, AND METHOD FOR MANUFACTURING THE SAME - A semiconductor apparatus and a light emitting apparatus which are capable of efficiently dissipating the heat generated by a semiconductor device and have high reliability, and a method for manufacturing the same are provided.11-26-2009
20100084678Luminescent Diode Chip - A luminescent diode chip includes a semiconductor body, which produces radiation of a first wavelength. A luminescence conversion element produces radiation of a second wavelength from the radiation of the first wavelength. An angular filter element reflects radiation that impinges on the angular filter element at a specific angle in relation to a main direction of emission back in the direction of the semiconductor body.04-08-2010
20090272995RESIN COMPOSITION FOR OPTICAL SEMICONDUCTOR ELEMENT ENCAPSULATION, AND OPTICAL SEMICONDUCTOR DEVICE PRODUCED BY USING THE SAME - An epoxy resin composition for optical semiconductor element encapsulation includes an epoxy resin (Component (A)) mainly containing an epoxy compound represented by a specific structural formula (1), a curing agent (Component (B)), and at least one of an oxynitride phosphor and a nitride phosphor (Component (C)). Therefore, the phosphor component (C) is uniformly dispersed in the epoxy resin composition without segregation. Thus, the resin composition serves as an excellent optical semiconductor element encapsulation material which has an adequate light diffusion property and a high light transmittance and permits a reduction in internal stress. Therefore, a light emitting diode element encapsulated with the epoxy resin composition is capable of stably emitting light, and satisfactorily performs its functions.11-05-2009
20090267102LIGHT EMITTING DIODE PACKAGE STRUCTURE AND METHOD FOR FABRICATING THE SAME - A light emitting diode (LED) package structure includes a carrier, a first protrusion, a LED chip, and an adhesion layer. The first protrusion is disposed on the carrier and has a first opening to expose the carrier. The LED chip is disposed in the first opening on the carrier, and a ratio between a width of the first opening and a width of the LED chip is 1˜1.5. The adhesion layer is disposed between the LED chip and the carrier to bond the LED chip to the carrier.10-29-2009
20090267101DISPLAY INCLUDING LIGHT EMITTING ELEMENT, BEAM CONDENSING ELEMENT AND DIFFUSING ELEMENT - A display includes pixels each of which contains a light emitting element and which are arranged in a matrix form, a light transmitting insulating layer which includes a back surface facing the light emitting element and a front surface as a light output surface, a beam-condensing element which is arranged on a back side of the insulating layer and increases a directivity of light emitted by the light emitting element to make the light incident on the insulating layer, and a diffusing element which is arranged on a front side of the insulating layer, diffuses light from the insulating layer, and output the diffused light to an external environment.10-29-2009
20090267093LIGHT EMITTING DEVICE - A light emitting device includes a light emitting diode chip, a heat conductive plate mounting thereon the light emitting diode chip, a sub-mount member disposed between said light emitting diode chip and said heat conductive plate, a dielectric substrate stacked on the heat conductive plate and being formed with a through-hole through which the sub-mount member is exposed, an encapsulation member for encapsulation of said light emitting diode chip, and a lens superimposed on the encapsulation member. The sub-mount member is formed around a coupling portion of the light emitting diode chip with a reflective film which reflects a light emitted from a side face of the light emitting diode chip. The sub-mount member is selected to have a thickness such that the reflecting film has its surface spaced away from said heat conductive plate by a greater distance than said dielectric substrate.10-29-2009
20090267092LIGHT-EMITTING DEVICE - A light-emitting device of the present invention includes: a semiconductor layer 10-29-2009
20110198649LIGHT-EMITTING DEVICE - A light-emitting device according to an embodiment includes: a blue color LED including a first principal surface, a second principal surface and a side surface, the blue color LED producing light; and a package portion in which a recess portion, which is a light shield portion accommodating the blue color LED with no gap on the side surface side, thereby preventing release of the light from the side surface, is formed.08-18-2011
20110147782OPTICAL DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is an optical device which has an increased rate of an area occupied by an effective optical region to an light-transmissive substrate and less noise due to reflection from a peripheral end face of the light-transmissive substrate. The optical device includes a semiconductor substrate in which a light-receiving element is formed and a light-transmissive substrate provided above the semiconductor substrate so as to cover the light-receiving element and fixed to the semiconductor substrate with an adhesive layer. The light-transmissive substrate has, in a peripheral end face, a curved surface which slopes so as to flare from an upper surface toward a lower surface.06-23-2011
20100123154LIGHT EMITTING DEVICE PACKAGE - A light emitting device package is provided. The light emitting device package comprises a package body, a light emitting device on the package body, and a light-transmitting light guide member under the light emitting device.05-20-2010
20100084670LED CHIP WITH EXPANDED EFFECTIVE REFLECTION ANGLES - An LED chip with enhanced effective reflection angles is revealed, primarily comprising an epitaxial substrate, a first reflection mirror on the epitaxial substrate, a second reflection mirror, a light-emitting mechanism, and a first electrode. The first reflection mirror consists of a plurality of first DBRs with a first paired thickness. The second reflection mirror is formed on the first reflection mirror and consists of a plurality of second DBRs with a second paired thickness. Accordingly, two different ranges of effective reflection angles is provided to increase the effective reflection angles to overcome issues of lower production yield during the conventional thermally-bonding processes with reflection metal plates.04-08-2010
20100084679LIGHT-EMITTING DEVICE - A light-emitting device having a substrate, a light-emitting stack, and a transparent connective layer is provided. The light-emitting stack is disposed above the substrate and comprises a first diffusing surface. The transparent connective layer is disposed between the substrate and the first diffusing surface of the light-emitting stack; an index of refraction of the light-emitting stack is different from that of the transparent connective layer.04-08-2010
20100084680SPONTANEOUS/STIMULATED LIGHT EMITTING .mu.-CAVITY DEVICE - A light emitting device with a p-cavity including a first spacer of single crystal dielectric material and an active area including single crystal erbium dielectric material positioned on the first spacer. The erbium dielectric material and the single crystal dielectric material of the first spacer are substantially crystal lattice matched at their juncture. A second spacer of single crystal dielectric material is positioned on the active area. The erbium dielectric material and the single crystal dielectric material of the second spacer are substantially crystal lattice matched at the second surface. The high-κ erbium dielectric provides a high gain μ-cavity that emits increased amounts of light in either spontaneous or stimulated modes of operation.04-08-2010
20100084672ORGANIC ELECTROLUMINESCENT ELEMENT AND METHOD FOR PRODUCING THE SAME - An organic EL device includes an organic luminescent layer between an anode and a cathode. The organic luminescent layer comprises at least two host materials and a dopant which is a luminescent compound. The at least two host materials are identical to or substantially identical to each other in the energy value of LUMO, but on the other hand, are different from each other in the energy value of HOMO. Alternatively, the at least two host materials are identical to or substantially identical to each other in the energy value of HOMO, but on the other hand, are different from each other in the energy value of LUMO. According to the above constitution, the balance of mobility between the electrons and holes can be regulated to solve the above problem of the prior art.04-08-2010
20100084671BRIGHTNESS ENHANCEMENT METHOD AND APPARATUS OF LIGHT EMITTING DIODES - A light source with enhanced brightness includes an angle-selective optical filter and a light emitting diode (LED) having a high reflective layer. The angle-selective filter is located on the top surface of emitting diode to pass lights at specified angles. According to one embodiment, the angle-selective filter comprises index-alternating layers. With a reflective polarizer, the light source can produce polarized light with enhanced brightness.04-08-2010
20100078663TRANSPARENT SOLDER MASK LED ASSEMBLY - A substrate for an LED assembly can have a plurality of cups formed therein. At least one cup can be formed within another cup. The cups can be co-axial with respect to one another, for example. A machined surface of the substrate can enhance reflectivity of the LED assembly. A transparent and/or non-global solder mask can enhance reflectivity of the LED assembly. A transparent ring can enhance reflectivity of the LED assembly. By enhancing reflectivity of the LED assembly, the brightness of the LED assembly can be increased. Brighter LED assemblies can be used in applications such as flashlights, displays, and general illumination.04-01-2010
20100078661MACHINED SURFACE LED ASSEMBLY - A substrate for an LED assembly can have a plurality of cups formed therein. At least one cup can be formed within another cup. The cups can be co-axial with respect to one another, for example. A machined surface of the substrate can enhance reflectivity of the LED assembly. A transparent and/or non-global solder mask can enhance reflectivity of the LED assembly. A transparent ring can enhance reflectivity of the LED assembly. By enhancing reflectivity of the LED assembly, the brightness of the LED assembly can be increased. Brighter LED assemblies can be used in applications such as flashlights, displays, and general illumination.04-01-2010
20090278155BACKLIGHT DEVICE FOR LIQUID CRYSTAL DISPLAY INCLUDING A PLURALITY OF LIGHT EMITTING DIODES WITHIN THEIR OWN CONCAVES ALIGNED IN A STRAIGHT LINE WITHIN A LARGER CONCAVE - A semiconductor light emitting device of the present invention includes a plurality of light emitting elements, a package body for storing the light emitting elements, wiring patterns being electrically connected to the light emitting elements, and Au wires for electrically connecting the light emitting elements and the wiring patterns, the package body including mounting concave portions for storing the respective light emitting elements, and storing concave portion for storing the mounting concave portions and the Au wires, the mounting concave portions being aligned on a linear line and spaced from each other with an equal pitch. In the above arrangement, as the semiconductor light emitting device of the present invention, it is possible to provide a semiconductor light emitting device having a high directional characteristic of emitted light, and a backlight device for a liquid crystal display, the backlight device using the semiconductor light emitting device and having an improved brightness of the emitted light.11-12-2009
20100078664LED PHOSPHOR DEPOSITION - LED phosphor deposition for use with LEDs. In an aspect, a method is provided for forming an encapsulation. The method includes determining a geometric shape for the encapsulation, selecting a dam material, applying the dam material to a substrate to form a boundary defining a region having the geometric shape, and filling the region with encapsulation material to form the encapsulation. In another aspect, an LED apparatus is provided that includes at least one LED chip and an encapsulation disposed on the at least one LED chip. The encapsulation is formed by determining a geometric shape for the encapsulation, selecting a dam material, applying the dam material to a substrate to form a boundary defining a region having the geometric shape, and filling the region with encapsulation material to form the encapsulation.04-01-2010
20100078669LIGHT EMITTING DEVICE AND LEAD FRAME FOR THE SAME - An LED according to the present invention includes a light-emitting chip emitting light, a chip-mounting portion on which the light-emitting chip is mounted, a light-reflecting layer formed on at least a portion of the chip-mounting portion and a gold plating layer formed on at least a portion of the light-reflecting layer, the gold plating layer having a thickness such that the gold plating layer has a different color from a color of gold. The chip-mounting portion may have various shapes and materials. For example, the chip-mounting portion may be a lead terminal, a slug, a printed circuit board, a ceramic substrate, a CNT substrate, etc.04-01-2010
20090289271SILICATE-BASED PHOSPHORS AND LED LIGHTING DEVICES USING THE SAME - Disclosed herein is a group of phosphors of the formula11-26-2009
20090072257Light emitting device - An upper electrode is formed on one surface of a semiconductor multilayer structure including a light emitting layer. An interface electrode is formed at a region of another surface of the semiconductor multilayer structure except a region right under the upper electrode. A center of the interface electrode coincides with a center of the upper electrode. At least a part of the interface electrode has a similar shape to a shape of an outer periphery of the upper electrode. A current blocking layer is formed at another region of another surface of the semiconductor multilayer structure except the region where the interface electrode is formed. A reflecting layer for reflecting a part of the light emitted from the light emitting layer is electrically connected to the interface electrode. A conductive supporting substrate is electrically connected to the semiconductor multilayer structure.03-19-2009
20100025712SEMICONDUCTOR COMPONENT AND ASSOCIATED PRODUCTION METHOD - The present invention relates to a semiconductor component and an associated production method, said component emitting at least two defined wavelengths with a defined intensity ratio. It is an object of the present invention to specify an optical semiconductor component and an associated production method, said component emitting at least two defined wavelengths with a defined intensity ratio. In this case, the intention is that both the wavelengths and the intensity ratio can be set extremely precisely. The semiconductor component according to the invention has a substrate (02-04-2010
20120193660HORIZONTAL LIGHT EMITTING DIODES INCLUDING PHOSPHOR PARTICLES - Horizontal light emitting diodes include anode and cathode contacts on the same face and a transparent substrate having an oblique sidewall. A conformal phosphor layer having an average equivalent particle diameter d50 of at least about 10 μm is provided on the oblique sidewall. High aspect ratio substrates may be provided. The LED may be directly attached to a submount.08-02-2012
20100006878SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING PATTERNED SUBSTRATE AND MANUFACTURING METHOD OF THE SAME - There is provided a semiconductor light emitting device having a patterned substrate and a manufacturing method of the same. The semiconductor light emitting device includes a substrate; a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer sequentially formed on the substrate, wherein the substrate is provided on a surface thereof with a pattern having a plurality of convex portions, wherein out of the plurality of convex portions of the pattern, a distance between a first convex portion and an adjacent one of the convex portions is different from a distance between a second convex portion and an adjacent one of the convex portions.01-14-2010
20110062481ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device cutting off ambient light while keeping emission intensity includes a pair of first and second electrodes opposed to each other; and a plurality of organic semiconductor layers layered and disposed between the first and second electrodes, wherein the organic semiconductor layers include an organic light-emitting layer, the organic semiconductor device further comprising a light-scattering layer layered and disposed between the organic light-emitting layer and at least one of the first and second electrodes. The light-scattering layer includes: organic materials having carrier injection and transport characteristics of transporting electrons and/or holes; and plural particles dispersed among the organic materials so that light emitted from the organic light-emitting layer is passed therethrough.03-17-2011
20110062480SEMI-CONDUCTOR LIGHT-EMITTING DEVICE - Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, a second conductive semiconductor layer under the active layer, a second electrode layer under the second conductive semiconductor layer; and an insulating layer on an outer peripheral surface of at least two layers of the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer.03-17-2011
20110193118LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A light emitting device includes a first resin layer which is made of transparent resin and provided outside a solid-state light-emitting element mounted on a mounting substrate; and a second resin layer which is provided outside the first resin layer and made of transparent resin that contains a phosphor which is excited with a luminescence wavelength of the solid-state light-emitting element, wherein when the refractive index of the solid-state light-emitting element is set to be N08-11-2011
20110062479METHOD OF MANUFACTURING GROUP-III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND GROUP-III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP - Provided are a method of manufacturing a group-III nitride semiconductor light-emitting device in which a light-emitting device excellent in the internal quantum efficiency and the light extraction efficiency can be obtained, a group-III nitride semiconductor light-emitting device and a lamp. Included are an epitaxial step of forming a semiconductor layer (03-17-2011
20110062478SEMICONDUCTOR LIGHT EMITTING DEVICES INCLUDING FLEXIBLE UNITARY FILM HAVING AN OPTICAL ELEMENT THEREIN - A semiconductor light emitting device includes a substrate having a face, a flexible unitary film that includes an optical element therein on the face, and a semiconductor light emitting element between the substrate and the flexible film that is configured to emit light through the optical element. The flexible unitary film extends conformally on the face of the substrate outside the semiconductor light emitting element and also extends on the semiconductor light emitting element.03-17-2011
20110062477SEMICONDUCTOR LIGHT EMITTING DEVICE - Disclosed are a semiconductor light emitting device. The semiconductor light emitting device comprises a light emitting structure comprising a plurality of compound semiconductor layers, a passivation layer at the outside of the light emitting structure, a first electrode layer on the light emitting structure, and a second electrode layer under the light emitting structure.03-17-2011
20110062476LIGHT-EXTRACTION MEMBER, ORGANIC EL ELEMENT, AND METHOD FOR PRODUCING THE ORGANIC EL ELEMENT - A light-extraction member for use in a light-emitting display device, the light-extraction member including a light-extracting substrate which is disposed on the light-extraction side of the light-emitting display device, a color filter layer formed over the light-extracting substrate, and a lens member formed over the color filter layer, wherein the color filter layer is bonded via an adhesive portion to a convex top portion of the lens member.03-17-2011
20110062475ORGANIC LIGHT EMITTING DISPLAY DEVICE - An organic light emitting display device includes a substrate and a plurality of pixels on the substrate. The pixels include a plurality of first electrodes, a second electrode, a white light emitting layer, and a first thin film layer between the first electrodes and the second electrode. White light emitted from the white light emitting layer causes resonance to occur between the first electrodes and the second electrode.03-17-2011
20110062474LIGHT-EMITTING DIODE DEVICE AND FABRICATION METHOD THEREOF - A light-emitting diode device includes a frame, a light-emitting diode die, a fluorescent layer, a reflector, and a lens. The light-emitting diode die is disposed on the frame. The fluorescent layer is directly molded to cover the light-emitting diode die. The reflector is directly molded on the frame, surrounding the light-emitting diode die, and configured to direct light from the light-emitting die in a predetermined direction. The lens is directly molded within the reflector, covering the fluorescent layer.03-17-2011
20110062473LIGHT EMITTING DEVICE - A light emitting device includes a light emitting element, a wire connected to the light emitting element, and a substrate supporting the light emitting element. The substrate is formed with a first recess and a second recess that are open in a common surface of the substrate. The first recess includes a first bottom surface and a first side surface connected to the first bottom surface, and the light emitting element is disposed on the first bottom surface. The second recess includes a second bottom surface and a second side surface connected to the second bottom surface, and the wire is bonded to the second bottom surface. Both of the first side surface and the second side surface reach the common surface. The first side surface is connected to both of the second bottom surface and the second side surface. The opening area of the first recess is larger than the opening area of the second recess.03-17-2011
20110062472WAVELENGTH-CONVERTED SEMICONDUCTOR LIGHT EMITTING DEVICE - A light emitting diode includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region, and n- and p-contacts disposed on the n- and p-type regions. The light emitting layer is configured to emit light of a first peak wavelength. A wavelength converting material is positioned in a path of light emitted by the light emitting layer. The wavelength converting material is configured to absorb light of the first peak wavelength and emit light of a second peak wavelength. The light emitting diode is configured such that a light emission pattern from the light emitting diode complements a light emission pattern from the wavelength converting material.03-17-2011
20110062471LED MODULE WITH HIGH INDEX LENS - An array of housings with housing bodies and lenses is molded, or an array of housing bodies is molded and bonded with lenses to form an array of housings with housing bodies and lenses. Light-emitting diodes (LEDs) are attached to the housings in the array. An array of metal pads may be bonded to the back of the array or insert molded with the housing array to form bond pads on the back of the housings. The array is singulated to form individual LED modules.03-17-2011
20110062470REDUCED ANGULAR EMISSION CONE ILLUMINATION LEDS - A light emitting diode (LED) package includes a support, an LED die mounted on the support, a reflector around the LED die, and a lens over the LED die. The reflector has an angled reflective surface that limits the light emission angle from the LED package. The reflector is a part of the lens or the support.03-17-2011
20110062469MOLDED LENS INCORPORATING A WINDOW ELEMENT - A light emitter includes a light-emitting device (LED) die and an optical element over the LED die. The optical element includes a lens, a window element, and a bond at an interface disposed between the lens and the window element. The window element may be a wavelength converting element or an optically flat plate. The window element may be directly bonded or fused to the lens, or the window element may be bonded by one or more intermediate bonding layers to the lens. The bond between the window element and the lens may have a refractive index similar to that of the window element, the lens, or both.03-17-2011
20100090235LIGHT-EMITTING DIODE DEVICE AND METHOD FOR FABRICATING THE SAME - A light-emitting diode (LED) device is disclosed. The LED device includes a semiconductor substrate with a light-emitting diode chip disposed thereon. At least two isolated outer wiring layers are disposed on the bottom surface of the semiconductor substrate and are electrically connected to the light-emitting diode chip, serving as input terminals. A lens module is adhered to the top surface of the semiconductor substrate to cap the light-emitting diode chip. In one embodiment, the lens module comprises a glass substrate having a first cavity formed at a first surface thereof, a fluorescent layer formed over a portion of a first surface exposed by the first cavity, facing the light-emitting diode chip, and a molded lens formed over a second surface of the glass carrier opposing to the first surface.04-15-2010
20110193123LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM - Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a light emitting structure layer including a first conductive type semiconductor layer, an active layer under the first conductive type semiconductor layer, and a second conductive type semiconductor layer under the active layer; a conductive layer under the second conductive type semiconductor layer; an adhesive layer under the conductive layer; a support member under the adhesive layer; a contact electrode connected to the first conductive type semiconductor layer; a first lead electrode under the support member; a first electrode connecting the contact electrode to the first lead electrode on a first region of the support member; a second electrode connected to at least one of the conductive layer and the adhesive layer on a second region of the support member; a second lead electrode connected to the second electrode under the support member; and a first insulating layer between the contact electrode and the light emitting structure layer.08-11-2011
20110198636ORGANIC LIGHT EMITTING DIODE DEVICE - Disclosed herein is an organic light emitting diode device, including: an organic EL element layer; an electrode layer supplying power to the organic EL element layer; and a metal nanocluster layer which is formed by covering a plurality of metal clusters with media and which is located between the organic EL element layer and the electrode layer to induce a luminescence enhancement effect. The organic light emitting diode device is advantageous in that carriers can be easily injected, so that light output efficacy is improved, thereby enhancing fluorescent emission output.08-18-2011
20090206355LIGHT EMITTING DEVICES - Light-emitting devices, and related components, systems and methods are disclosed.08-20-2009
20090206353THIN-LIGHT EMITTING DIODE LAMP, AND METHOD OF MANUFACTURING THE SAME - A thin-type light emitting diode lamp includes a blue light emitting diode chip (08-20-2009
20110121345POWER SURFACE MOUNT LIGHT EMITTING DIE PACKAGE - A light emitting die package is provided which includes a metal substrate having a first surface and a first conductive lead on the first surface. The first conductive lead is insulated from the substrate by an insulating film. The first conductive lead forms a mounting pad for mounting a light emitting device. The package includes a metal lead electrically connected to the first conductive lead and extending away from the first surface.05-26-2011
20110169037Wiring Board for Light-Emitting Element - A wiring board for light-emitting element, comprising a ceramic insulating substrate, and a conductor layer formed on the surface or in the inside of the insulating substrate, and having a mounting region mounting a light-emitting element on one surface of the insulating substrate; wherein 07-14-2011
20090014745Method of manufacturing high power light-emitting device package and structure thereof - A method of manufacturing high power light-emitting device packages and structure thereof, wherein the method thereof includes the steps of: (a) forming a plurality of lead frames, each of the lead frames includes a heat-dissipating element and a plurality of leads; (b) electroplating an outer surface of the lead frames each; (c) coating conductive gel on a surface of the heat-dissipatings each; (d) arranging at least one light-emitting chip on the conductive gel; (e) forming an encapsulant on each of the lead frames; (f) connecting at least one top electrode of the light-emitting chip with one of the leads; (g) coating silicon gel for covering the at one light-emitting chip, and forming integrally a focusing light convex surface on a top surface of the silicon gel; and (h) cutting off the tie-bars to separate the lead frames from one another, whereby forming a plurality of high power light-emitting device packages.01-15-2009
20100283079SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE - A semiconductor light emitting device package including a main body including a supporting member and an outside member on the supporting member; at least one semiconductor light emitting device disposed on the supporting member in which the outside member at least partially surrounds the at least one semiconductor light emitting device; first and second electrodes, at least one electrode of the first and second electrodes at least partially extending under the at least one semiconductor light emitting device; a metallic member disposed under the at least one semiconductor light emitting device and extending beyond outside edges of the at least one semiconductor light emitting device; a first molding part surrounded by the outside member and covering the at least one semiconductor light emitting device; and a second molding part disposed on the first molding part, the second molding part formed in a domed shape. Further, the first and second electrodes also extend to a bottom surface of the supporting member.11-11-2010
20110266570LIGHT EMITTING DIODE PACKAGE AND MANUFACTURING METHOD THEREOF - In a light emitting device package and manufacturing method thereof, a multi-layer structure is allocated upon a substrate, of which at least two films with different refractive indices are alternately stacked together.11-03-2011
20110266568LIGHT EMITTING DEVICE WITH TRENCHES AND A TOP CONTACT - A device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region. A bottom contact disposed on a bottom surface of the semiconductor structure is electrically connected to one of the n-type region and the p-type region. A top contact disposed on a top surface of the semiconductor structure is electrically connected to the other of the n-type region and the p-type region. A mirror is aligned with the top contact. The mirror includes a trench formed in the semiconductor structure and a reflective material disposed in the trench, wherein the trench extends through the light emitting layer.11-03-2011
20090090924INTERMEDIATE OPTICAL PACKAGES AND SYSTEMS COMPRISING THE SAME, AND THEIR USES - Methods and apparatuses for forming optical packages, and intermediate structures resulting from the same are disclosed, which provide an optical element over a device. The optical element is formed by applying a force to lateral portions of a liquid material layer formed below an elastomeric material layer such that the liquid material layer has a radius of curvature sufficient to direct light to a light sensitive portion of the device, after which the liquid material layer is exposed to conditions which maintain the radius of curvature after the lateral force is removed.04-09-2009
20090212311SEMICONDUCTOR LIGHT-EMITTING DEVICE - The invention discloses a semiconductor light-emitting device, which includes a substrate, a first conductive type semiconductor material layer, a second conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second electrode, and a plurality of bump structures. The first conductive type semiconductor material layer is formed on the substrate and has an upper surface which includes a first region and a second region distinct from the first region. The first electrode is formed on the first region. The light-emitting layer and the second conductive type semiconductor material layer are formed on the second region. The bump structures are formed on the upper surface of the first conductive type semiconductor material layer and between the first region and the second region. Each bump structure is made of ITO, SiO2, SiN, ZnO, polymide, BCB, SOG, InO, or SnO.08-27-2009
20100006879Radiation Emitting Device - A radiation emitting device includes a radiation emitting functional layer that emits a primary radiation, and a radiation conversion material that is arranged in the radiation path of the radiation emitting functional layer and converts the primary radiation at least partially into a radiation of greater wavelength.01-14-2010
20100006877LIGHT-EMITTING DIODE PACKAGE - An LED package including a carrier, a LED chip, and a lens is provided. The LED chip is disposed on the carrier. The lens is disposed on the carrier and above the LED chip. A gap is formed between the LED chip and the lens. The lens has a first surface, a second surface, a protrusion, and at least one protruding ring. The first surface faces the LED chip. The second surface is opposite to the first surface. The protrusion is located at the first surface. The protruding ring is located at the first surface and surrounds the protrusion.01-14-2010
20090166656LIGHT EMITTING DIODE - A light emitting diode (LED) (07-02-2009
20100127287ORGANIC LIGHT EMITTING DIODES WITH STRUCTURED ELECTRODES - A cathode that contain nanostructures that extend into the organic layer of an OLED has been described. The cathode can have an array of nanotubes or a layer of nanoclusters extending out from its surface. In another arrangement, the cathode is patterned and etched to form protruding nanostructures using a standard lithographic process. Various methods for fabricating these structures are provided, all of which are compatible with large-scale manufacturing. OLEDs made with these novel electrodes have greatly enhanced electron injection, have good environmental stability.05-27-2010
20090278150METHOD FOR FORMING METAL ELECTRODE, METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENTS AND NITRIDE BASED COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENTS - A method for forming a metal electrode and a method for manufacturing semiconductor light emitting elements include providing a substrate having a semiconductor layer formed thereon; forming a bonding metal layer and a reflective metal layer on the semiconductor layer; and forming a metal electrode by layer inversion of the bonding metal layer and the reflective metal layer through a heat treatment process. An interface characteristic between a semiconductor layer and an electrode having a reflective metal layer is enhanced by a layer inversion phenomenon. High reflectivity can be obtained, because a reflection metal layer is uniformly distributed on a semiconductor layer. Further, out-diffusion of a reflective metal layer is prevented through layer inversion to enhance the thermal stability of an electrode. And the number of accepters for generating holes is increased through heat treatment under an oxygen atmosphere, so that contact resistance can be lowered.11-12-2009
20090278151Light emitting diode packages, light emitting diode systems and methods of manufacturing the same - In a method of forming an LED semiconductor device, and in an LED semiconductor device, an LED is provided on a substrate. A first encapsulant material layer is provided on the LED, and the first encapsulant material layer is firstly annealed. A luminescence conversion material layer is provided on the firstly annealed first encapsulant material layer, and the first encapsulant material layer and the luminescence conversion material layer and secondly annealed.11-12-2009
20090045425SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor light emitting device includes: a support substrate; a metal layer provided on the support substrate; a semiconductor layer provided on the metal layer and including a light emitting layer; a contact layer containing a semiconductor, selectively provided between the semiconductor layer and the metal layer, and being in contact with the semiconductor layer and the metal layer; and an insulating film provided between the semiconductor layer and the metal layer at a position not overlapping the contact layer.02-19-2009
20090045423SEMICONDUCTOR LIGHT-EMITTING DEVICE - An object of the present invention is to provide a light-emitting device with a high output and a high efficiency by improving the efficiency for utilizing light emitted from a semiconductor light-emitting element.02-19-2009
20090045421Surface mount type light emitting diode package device - The invention discloses a surface mount type light emitting diode (LED) package device, which has a cup-shaped structure and comprises a specific lens bulged out over the cup opening. The lens is an aspheric lens having a specific curved surface not fully symmetric with respect to its central point, while it exhibits a similarly symmetric curved surface with respect to a bisector line or a diagonal line passing through the central point. The LED package device according to the present invention may have a wider view angle.02-19-2009
20090045420Backlight Including Side-Emitting Semiconductor Light Emitting Devices - Individual side-emitting LEDs are separately positioned in a waveguide, or mounted together on a flexible mount then positioned together in a waveguide. As a result, the gap between each LED and the waveguide can be small, which may improve coupling of light from the LED into the waveguide. Since the LEDs are separately connected to the waveguide, or mounted on a flexible mount, stress to individual LEDs resulting from changes in the shape of the waveguide is reduced.02-19-2009
20110169039GaN COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME - The present invention relates to a gallium nitride (GaN) compound semiconductor light emitting element (LED) and a method of manufacturing the same. The present invention provides a vertical GaN LED capable of improving the characteristics of a horizontal LED by means of a metallic protective film layer and a metallic support layer. According to the present invention, a thick metallic protective film layer with a thickness of at least 10 microns is formed on the lateral and/or bottom sides of the vertical GaN LED to protect the element against external impact and to easily separate the chip. Further, a metallic substrate is used instead of a sapphire substrate to efficiently release the generated heat to the outside when the element is operated, so that the LED can be suitable for a high-power application and an element having improved optical output characteristics can also be manufactured. A metallic support layer is formed to protect the element from being distorted or damaged due to impact. Furthermore, a P-type electrode is partially formed on a P-GaN layer in a mesh form to thereby maximize the emission of photons generated in the active layer toward the N-GaN layer.07-14-2011
20110198638LIGHT-EMITTING DIODE (LED) PACKAGE SYSTEMS - A package system includes a substrate having at least one first thermally conductive structure through the substrate. At least one second thermally conductive structure is disposed over the at least one first thermally conductive structure. At least one light-emitting diode (LED) is disposed over the at least one second thermally conductive structure.08-18-2011
20110198635Light Emitting Diode With Metal Piles and Multi-Passivation Layers and Its Manufacturing Method - The present invention relates to a light emitting diode with metal piles and one or more passivation layers and a method for making the diode including a first steps of performing mesa etching respectively on a first semiconductor layer and a second semiconductor layer belonging to stacked layers formed on a substrate in sequence! a second step of forming a reflector layer on the mesa-etched upper and side face! a third step of contacting one or more first electrodes with the first semiconductor layer and one or more second electrodes through the reflector layer with the second semiconductor layer; a fourth step of forming a first passivation layer on the reflector layer and the contacted electrodes; and a fifth step of connecting the first electrodes to a first bonding pad through one or more first electrode lines, bring one ends of vertical extensions having the shape of a metal pile into contact with one or more second electrodes, and connecting the other ends of the vertical extensions to a second bonding pad through one or more second electrode lines. As effects of the present invention, the loss of light emitting area decreases and current diffusion efficiency increases.08-18-2011
20110198637Light-Emitting Devices on Textured Substrates - A device includes a textured substrate, which further includes a plurality of trenches. Each of the plurality of trenches includes a first sidewall and a second sidewall opposite the first sidewall. A plurality of reflectors configured to reflect light is formed, with each of the plurality of reflectors being on one of the first sidewalls of the plurality of trenches. The second sidewalls of the plurality of trenches are substantially free from any reflector.08-18-2011
20110198643LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM - Disclosed is a light emitting device package. The light emitting device package includes a body; first and second electrode layers on the body; a light emitting device electrically connected to the first and second electrode layers on the body; a luminescent layer on the light emitting device; and an encapsulant layer including particles on the luminescent layer, wherein an effective refractive index of the encapsulant layer has a deviation of 10% or less with respect to an effective refractive index of the luminescent layer.08-18-2011
20110198642LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM - A light emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer; and 08-18-2011
20110198652LOW RESISTANCE ELECTRODE AND COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING THE SAME - A low resistance electrode and a compound semiconductor light emitting device including the same are provided. The low resistance electrode deposited on a p-type semiconductor layer of a compound semiconductor light emitting device including an n-type semiconductor layer, an active layer, and the p-type semiconductor layer, including: a reflective electrode which is disposed on the p-type semiconductor layer and reflects light being emitted from the active layer; and an agglomeration preventing electrode which is disposed on the reflective electrode layer in order to prevent an agglomeration of the reflective electrode layer during an annealing process.08-18-2011
20110198655LIGHT EMITTING DEVICE - The present invention relates to a light emitting device (08-18-2011
20110198653LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM HAVING THE SAME - A light emitting device package of the embodiment includes a body; an insulating layer on a surface of the body; at least one electrode layer on the insulating layer; and a light emitting device on the at least one electrode layer. The electrode layer includes a thermal diffusion layer and a reflective layer on the thermal diffusion layer, and the thermal diffusion layer has a thickness thicker than a thickness of the reflective layer by at least twenty times.08-18-2011
20110198651Red and Green Fluorosulfide Phosphor, Preparation Method and White-Light Emitting Diodes - Novel red and green fluorosulfide phosphors have a chemical formula of (A08-18-2011
20110198650SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD - The present invention discloses a semiconductor light-emitting device including a semiconductor light-emitting element, a first attaching layer and a wavelength conversion structure. The primary light emitted from the semiconductor light-emitting element enters the wavelength conversion structure to generate a converted light, whose wavelength is different form that of the primary light. In addition, the present invention also provides the method for forming the same.08-18-2011
20110198648LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM - Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a first conductive type semiconductor layer including P-type dopants and having a plurality of holes, an electrode connected to the first conductive type semiconductor layer, an active layer under the first conductive type semiconductor layer, a second conductive type semiconductor layer under the active layer, and an electrode layer under the second conductive type semiconductor layer.08-18-2011
20090140280Light-emitting device - A light-emitting device comprises a substrate, an epitaxial structure formed on the substrate including a first semiconductor layer, a second semiconductor layer, and a light-emitting layer formed between the first semiconductor layer and the second semiconductor layer. A trench is formed in the epitaxial structure to expose a part of side surface of the epitaxial structure and a part of surface of the first semiconductor layer, so that a first conductive structure is formed on the part of surface of the first semiconductor layer in the trench, and a second conductive structure is formed on the second semiconductor layer. The first conductive structure includes a first electrode and a first pad electrically contacted with each other. The second conductive structure includes a second electrode and a second pad electrically contacted with each other. Furthermore, the area of at least one of the first pad and the second pad is between 1.5×1006-04-2009
20080210963LIGHT EMITTING DIODE PACKAGE STRUCTURE AND METHOD OF MAKING THE SAME - A light emitting diode package structure has a silicon substrate, a plurality of cup-structures on the silicon substrate, a plurality of conductive patterns disposed on the silicon substrate, one of a plurality of light emitting diodes respectively disposed on each cup-structure and a plurality of wires electrically connected to the light emitting diodes and the conductive patterns. The light emitting diodes are electrically connected in series through the conductive wires and the conductive patterns.09-04-2008
20100090237SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device and corresponding method of manufacture, where the semiconductor light emitting device includes a light emitting structure, a second electrode layer, an insulating layer, and a protrusion. The light emitting structure comprises a second conductive semiconductor layer, an active layer under the second conductive semiconductor layer, and a first conductive semiconductor layer under the active layer. The second electrode layer is formed on the light emitting structure. The insulating layer is formed along the circumference of the top surface of the light emitting structure. The protrusion protrudes from the undersurface of the insulating layer to the upper part of the first conductive semiconductor layer.04-15-2010
20090014737LIGHT-EMITTING DIODES LAMP LENS STRUCTURE - The present invention is an LED lamp lens, on which orderly arranged surface plural protuberances. And with the differences of light perviousness, a particular luminous pattern of the LED lamp is displayed when the LED lamp is turned on.01-15-2009
20090273000Light emitting device and method of manufacturing same - A light emitting device according to the present invention comprises board 11-05-2009
20090272999ORGANIC ELEMENT AND MANUFACTURING METHOD THEREOF - An organic EL display panel having a functional layer with a uniform film thickness is provided. The organic EL display panel of the present invention contains an anode electrode set on a substrate; line-state banks set on the substrate on which the anode electrode is set and defining a line-state region; a hole transport layers arranged in matrix state on the substrate, the hole transport layer being set in the line-state region; a line-state interlayer set in the line-state region; a line-state organic EL layer set in the line-state region; and a cathode electrode provided on the organic EL layer, and the bank contains a fluorine resin.11-05-2009
20110198656B-SIALON PHOSPHOR, USE THEREOF AND METHOD FOR PRODUCING SAME - An Eu-activated β-sialon phosphor showing a high luminance, the use thereof and the method of producing the same. The β-sialon phosphor includes, as a matrix, a β-sialon crystal represented by a general formula: Si08-18-2011
20110198646HIGH-REFLECTION SUBMOUNT FOR LIGHT-EMITTING DIODE PACKAGE AND FABRICATION METHOD THEREOF - A method for fabricating a silicon submount for LED packaging. A silicon substrate is provided. A reflection layer is formed on the silicon substrate. Portions of the reflection layer and the silicon substrate are removed to form openings. A wafer backside grinding process is carried out to thin the silicon substrate thereby turning the openings into through silicon vias. An insulating layer is then deposited to cover the reflection layer and the silicon substrate. A seed layer is formed on the insulating layer. A resist pattern is then formed on the seed layer. A metal layer is formed on the seed layer not covered by the resist pattern. The resist pattern is then stripped. The seed layer not covered by the metal layer is then removed.08-18-2011
20110198645LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE - Disclosed are a light emitting device, a method of manufacturing the same and a light emitting device package. The light emitting device of the embodiment includes a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer between the first and second conductive semiconductor layers; a fluorescent layer on the light emitting structure; and a light extracting structure on the fluorescent layer. The light extracting structure extracts light, which is generated in the light emitting structure and incident into an interfacial surface between the fluorescent layer and the light extracting structure, to an outside of the light emitting structure.08-18-2011
20110198644LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM - A light emitting device package includes a sub mount; a light emitting device on the sub mount, and configured to generate light of a first wavelength; a dielectric layer disposed on the sub mount; and a fluorescent layer on the dielectric layer, and configured to convert the light of the first wavelength into light of a second wavelength, wherein the dielectric layer includes a plurality of layers having at least two different refractive indices, that transmits the light of the first wavelength and reflects the light of the second wavelength.08-18-2011
20110198639Radiation Emitting Body and Method for Producing a Radiation-Emitting Body - A radiation-emitting body comprising a layer sequence, having an active layer (08-18-2011
20090278147SEMICONDUCTOR LIGHT-EMITTING DEVICE - Disclosed is a semiconductor light-emitting device having improved light-extraction efficiency. Specifically disclosed is a semiconductor light-emitting device (11-12-2009
20090278156MOLDED CHIP FABRICATION METHOD AND APPARATUS - A light emitting diode (LED) is disclosed comprising a plurality of semiconductor layers with a first contact on the bottom surface of the semiconductor layers and a second contact on the top surface of the semiconductor layer. A coating is included that comprises a cured binder and a conversion material that at least partially covers the semiconductor layers, wherein the second contact extends through the coating and is exposed on the same plane as the top surface of the coating. An electrical signal applied to the first and second contacts is conducted through the coating to the semiconductor layers causing the LED to emit light. In other embodiments first and second contacts are accessible from one side of the LED. A coating is included that comprises a cured binder and a conversion material. The coating at least partially covers the semiconductor layers, with the first and second contacts extending through the coating and exposed on the same plane as a surface of the coating. An electrical signal applied to the first and second contacts is conducted through the coating to the semiconductor layers causing the LED to emit light.11-12-2009
20090278154Led module and method of manufacturing the same - Provided are a light emitting diode (LED) module and a method of manufacturing the same. The LED module may include a package housing including an inner space, a light-emitting chip in the inner space of the package housing, a phosphor layer including a fluorescent material and converting light emitted from the light-emitting chip to light having a longer wavelength than that of the light emitted from the light-emitting chip. The concentration of the fluorescent material of the phosphor layer may be inhomogeneous. The method of manufacturing the LED module may include providing or forming a package housing having an inner space and including a light-emitting chip in the inner space, measuring a radiation pattern of light emitted from the light-emitting chip, and forming a phosphor layer including a fluorescent material on the light-emitting chip and having characteristics that may be determined according to the radiation pattern.11-12-2009
20090278153LIGHT EMITTING DEVICE - Provided is a light emitting device. The light emitting device comprises a package body, a plurality of electrodes, a light emitting diode, and a lens. The package body comprises a trench. The plurality of electrodes is disposed on and/or in the package body. The light emitting diode is disposed on the package body and is electrically connected to the electrodes. The lens is disposed on an inner side of the trench.11-12-2009
20090278152LIGHT EMITTING DIODE AND PACKAGE METHOD THEREOF - A light emitting diode comprises a sheet-like package body, a barricade, a light emitting diode die, and fluorescent filler. The sheet-like package body has a die-bonding region. The barricade is a transparent wall that is disposed on the die-bonding region, and is integrated with the sheet-like package body or is adhered to sheet-like package body. The light emitting diode die is disposed on the region enclosed by the barricade, and the fluorescent filler is also filled into the region and surrounds the light emitting diode die. The light emitting diode and the method for packaging the light emitting diode can improve the uniformity and efficiency of the outputting light emitted from the light emitting diode, and the loss of the outputted light is reduced.11-12-2009
20090278149LIGHT EMITTING DIODE11-12-2009
20090278144Nitride Semiconductor Light Emitting Device - There is provided a nitride semiconductor light emitting device having a light reflection layer capable of preventing reflectivity from lowering and luminance from lowering due to deterioration of quality of an active layer. A nitride semiconductor laser includes at least a light emitting layer forming portion (11-12-2009
20090283786LIGHT EMITTING DEVICE AND ELECTRONIC APPARATUS - A light emitting device includes: a light emitting element which includes a first electrode layer, a second electrode layer, and a light emitting function layer disposed between the first electrode and the second electrode; a reflection layer which reflects light emitted from the light emitting function layer toward the light emitting function layer; and a translucent transflective layer which is disposed opposite the reflection layer with the light emitting function layer interposed therebetween to reflect some of the light emitted from the light emitting function layer toward the light emitting function layer and to transmit the remainder of the light. The translucent transflective layer is centered between a first layer having a refractive index n11-19-2009
20090283783Optoelectronic Semiconductor Chip and Method for Producing It - An optoelectronic semiconductor chip (11-19-2009
20130099267LIGHT EMITTING DEVICE PACKAGE AND MANUFACTURING METHOD THEREOF - A light emitting device (LED) package and a manufacturing method thereof are provided. The LED package may include a package body including a cavity, a first lead frame and a second lead frame that are disposed in the cavity of the package body, and an LED mounted on a bottom surface of the cavity of the package body, the LED including a transparent substrate, a first semiconductor layer, an active layer, and a second semiconductor layer that are laminated sequentially in one of a first direction that is parallel to the bottom surface of the cavity and a second direction that is inclined with respect to the bottom surface of the cavity.04-25-2013
20130099271LIGHT-EMITTING DEVICE AND LIGHTING APPARATUS INCORPORATIONG SAME - A light-emitting device is provided that can extract light in all directions and that has wide directivity. This light-emitting device includes: an elongated bar-shaped package extending sideways, the package being formed such that a plurality of leads are formed integrally with a first resin with part of the leads exposed; a light-emitting element that is fixed onto at least one of the leads and that is electrically connected to at least one of the leads; and a second resin sealing the light-emitting element. In the light-emitting device, the first resin and the second resin are formed of optically transparent resin, and the leads have outer lead portions used for external connection and protruding sideways from both left and right ends of the package.04-25-2013
20090289272LIGHT EMITTING DEVICE PACKAGE - Disclosed is a light emitting device package. The light emitting device package includes a semiconductor substrate comprising a first surface at a first depth from an upper surface of the semiconductor substrate and a second surface at a second depth from the first surface; and a light emitting part on the second surface of the semiconductor substrate.11-26-2009
20090289273LIGHT EMITTING DEVICE PACKAGE STRUCTURE AND FABRICATING METHOD THEREOF - A light emitting device package structure is described. The light emitting device package structure includes a substrate serving as a carrier supporting a light emitting device chip. The substrate and the light emitting device chip have a chip side and a substrate side separately. A first electrode layer is disposed on a first surface of the light emitting device chip and a second electrode layer is disposed on a second surface of the light emitting device chip, in which the first surface and the second surface are not coplanar. A first conductive trace is electrically connected to the first electrode layer and a second conductive trace is electrically connected to the second electrode layer. At least the first conductive trace or the second conductive trace is formed along the chip side and the substrate side simultaneously.11-26-2009
20090294787OPTICAL SEMICONDUCTOR DEVICE - An optical semiconductor device includes a distributed Bragg reflection layer of a first conductivity type, a distortion elaxation layer of the first conductivity type, a light absorbing layer, and a semiconductor layer of a second conductivity type, sequentially arranged on a semiconductor substrate. The distortion relaxation layer the same material as the semiconductor substrate. The total optical length of layers between the distributed Bragg reflection layer and the light absorbing layer is an integer multiple of one-half the wavelength of incident light that is detected.12-03-2009
20090294790ELECTROLUMINESCENT DEVICE AND FABRICATION METHOD THEREOF - An electroluminescent device includes a conduction substrate, a reflection layer, a patterned transparent conduction layer, at least one light emitting diode (LED) element, a first contact electrode and a second contact electrode. The reflection layer is disposed on the conduction substrate, and the patterned transparent conduction layer is formed on the reflection layer. The LED element is formed on the patterned transparent conduction layer, and the LED element includes a first semiconductor layer, a light emitting layer and a second semiconductor layer in sequence. The second semiconductor layer is disposed on the patterned transparent conduction layer and the reflection layer. The first contact electrode is disposed at one side of the first semiconductor layer, and the second contact electrode is disposed at one side of the conduction substrate.12-03-2009
20090294788LIGHT EMITTING DEVICE WITH A NON-ACTIVATED LUMINESCENT MATERIAL - The invention relates to a light emitting device having a radiation emitting element, for example a light emitting diode, and a luminescent material which is able to absorb a part of the radiation sent out by the radiation emitting element and to send out light with a wavelength which is different from the wavelength of the absorbed radiation. The device further has diffusing particles which are able to scatter a part of the radiation sent out by the radiation emitting element, and/or to scatter a part of the light sent out by the luminescent material. The diffusing particles are of non-activated luminescent material, through which production is simplified.12-03-2009
20100283070Nitride semiconductor light emitting device and method of manufacturing the same - There are provided a nitride semiconductor light emitting device having improved light extraction efficiency and a method of manufacturing the same. A nitride semiconductor light emitting device according to an aspect of the invention includes a light emitting lamination including first and second conductivity type nitride semiconductors and an active layer formed therebetween, first and second electrode pads electrically connected to the first and second conductivity nitride semiconductor layers, respectively, a plurality of patterns formed below the second electrode pad and having a depth reaching at least part of the first conductivity type nitride semiconductor layer, and an insulating film formed at an internal surface of the plurality of patterns to electrically insulate a region of a light emitting lamination, which is exposed through the plurality of patterns, from the second electrode pad.11-11-2010
20100283071ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing an organic electroluminescent display device may comprise forming transistors on a substrate, forming a lower electrode over an insulating layer, forming an insulating layer on the transistors, the lower electrode being coupled to a source or a drain of each of the transistors, forming a bank layer on the lower electrode, the bank layer having openings to expose part of the lower electrode, forming a bus electrode on the bank layer, forming an organic light-emitting layer to cover the lower electrode, the bank layer, and the bus electrode, patterning the organic light-emitting layer using a laser, thereby exposing the bus electrode placed on the bank layer, and forming an upper electrode on the organic light-emitting layer so that the upper electrode comes into contact with the exposed bus electrode.11-11-2010
20090294786LIGHT EMITTING DIODE DEVICE - A light emitting diode device includes a substrate, a plurality of light emitting diode chips mounted on the substrate and arranged in a plurality of lines and a frame located on the substrate. The frame includes a plurality of first plates each extending along a first direction of the substrate, a plurality of second plates each extending along a second direction of the substrate and a plurality of reflecting plates. The first plates and the second plates cooperatively form a plurality of receiving rooms for receiving the light emitting diode chips therein. Each reflecting plate is located above a corresponding line of light emitting diode chips and inclined with respect to the substrate.12-03-2009
20100148204Light-Emitting Element and Display Device - There has been a problem that difference in refractive index between an opposite substrate or a moisture barrier layer (passivation film) such as SiN provided thereover, and air is maintained large, and light extraction efficiency is low. Further, there has been a problem that peeling or cracking due to the moisture barrier layer is easily generated, which leads to deteriorate the reliability and lifetime of a light-emitting element. According to the present invention, a light-emitting element comprises a pixel electrode, an electroluminescent layer, a transparent electrode, a passivation film, a stress relieving layer, and a low refractive index layer, all of which are stacked sequentially. The stress relieving layer serves to prevent peeling of the passivation film. The low refractive index layer serves to reduce reflectivity of light generated in the electroluminescent layer in emitting to air. Therefore, a light-emitting element with high reliability and long lifetime and a display device using the light-emitting element can be provided.06-17-2010
20100219434LIGHT EMITTING DEVICE - A light emitting device is provided. The light emitting device may include a reflective layer having a prescribed pattern of at least one shape having prescribed thickness, width and periodicity. The light emitting device may also include a light emitting layer formed on the reflective layer. The prescribed periodicity may be based on 0.75λ/n to 5λ/n, where λ is the wavelength of the light emitted from the light emitting layer, and n is the refractive index of the light emitting layer.09-02-2010
20100219441LIGHT EMITTING DIODE PACKAGE STRUCTURE - An LED package structure and an LED packaging method are disclosed. The LED package structure includes a substrate, an LED unit and a transparent holding wall. The LED unit is electrically connected and located on the surface of the substrate. The transparent holding wall that corresponds to the LED unit is formed on the surface of the substrate, and has a receiving space. The LED unit is received in the receiving space. By utilizing the transparent holding wall, the colloid is controllably received in the receiving space and uniformly spread on the surface of the LED unit and around the LED unit. Thereby, the quantity of the colloid is easily controlled, and the LED package structure has a wide lighting angle due to the light emitted from the LED unit can pass through the transparent holding wall.09-02-2010
20110204406RESIN COMPOSITION, REFLECTIVE BOARD AND LIGHT-EMITTING APPARATUS - The present invention provides a resin composition comprising a liquid crystal polyester and a titanium oxide filler, wherein when a value obtained by converting the content of aluminum in the titanium oxide filler to the content of aluminum oxide is A (% by weight) and the volume average particle diameter of the titanium oxide filler is B (μm), A and B satisfy the formula (I): A≧0.1 and the formula (II): A/B08-25-2011
20110204403LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM - Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a substrate, a light emitting structure layer, a second electrode, a first electrode, a contact portion, and a first electrode layer. The first electrode is disposed in the substrate from a lower part of the substrate to a lower part of a first conductive type semiconductor layer in a region under an active layer. The contact portion is wider than the first electrode and makes contact with the lower part of the first conductive type semiconductor layer. The first electrode layer is disposed under the substrate and connected to the first electrode.08-25-2011
20110204400LIGHT EMITTING DEVICE, METHOD FOR MANUFACTURING THE SAME AND APPARATUS FOR MANUFACTURING LIGHT EMITTING DEVICE - According to one embodiment, a light emitting device includes a package member, a light emitting element provided in the package member, a first phosphor layer and a second phosphor layer. A first phosphor layer is provided on the light emitting element and has a first phosphor. A second phosphor layer is provided on the first phosphor layer and has a second phosphor. A luminescent efficiency of the first phosphor is higher than a luminescent efficiency of the second phosphor.08-25-2011
20110204398SUBSTRATE FOR MOUNTING LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING DEVICE - To provide a substrate for a light-emitting device, which is provided with a reflection layer having a high optical reflectance and being less susceptible to deterioration of the reflectance due to corrosion and which has an improved light extraction efficiency, and a light-emitting device employing such a substrate.08-25-2011
20110204396SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor light emitting device includes a semiconductor stack, a first electrode, a second electrode, a first interconnect, an insulating film, and a second interconnect. The semiconductor stack includes a first major surface, a second major surface provided on a side opposite to the first major surface, a side face, and a light emitting layer. The first electrode is provided on the first major surface. The second electrode is provided at least on a peripheral portion of the second major surface. The first interconnect is provided on the first electrode. The insulating film is provided on the side face of the semiconductor stack. The second interconnect is provided on the side face of the semiconductor stack via the insulating film. The second interconnect is connected to the second electrode in outside of the peripheral portion of the second major surface of the semiconductor stack.08-25-2011
20120292654LIGHT EMITTING DEVICE - A light emitting device includes an active layer; at least a portion of the active layer constitutes a gain region. The gain region is continuous from a first end surface and a second end surface. The gain region includes a first portion extending from the first end surface to a first reflective surface in a direction tilted with respect to a normal to the first side surface as viewed two-dimensionally; a second portion extending from the second end surface to the second reflective surface in a direction tilted with respect to a normal to the first side surface as viewed two-dimensionally; and a third portion extending from the first reflective surface to the second reflective surface in a direction tilted with respect to a normal to the first reflective surface as viewed two-dimensionally.11-22-2012
20120292652SURFACE LIGHT EMITTING DEVICE - The surface light emitting device includes an organic EL element, a protection substrate, a protection part, and a light extraction structure part. The element has a first face and a second face opposite to the first face, and emits light from the first face. The substrate has transparency for light emitted from the element, and is placed facing the first face, and has a primary surface facing the first face of the element. The protection part is placed facing the second face of the element, and constitutes a housing in combination with the substrate and accommodates the element so as to protect the element from water. The structure part is interposed between the first face of the element and the substrate, and suppresses reflection of light emitted from the element on at least one of the first face of the element and the primary surface of the substrate.11-22-2012
20110204401LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM - Disclosed are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a conductive support member; a reflective layer on the conductive support member; a light emitting structure on the reflective layer including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second semiconductor layers; and an electrode on the first conductive semiconductor layer, wherein a distance between the active layer and the reflective layer satisfies 2·Φ1+Φ3=N·2π±Δ, (0≦Δ≦π/2) in which the Φ1 represents a phase change value when light vertically traveling passes through the second conductive semiconductor layer, the Φ3 represents a phase change value when the light is reflected by the reflective layer, and the N represents a natural number, and wherein the distance between the reflective layer and the active layer includes a first distance in a first region overlapping with the electrode perpendicularly to the electrode and a second distance in a second region other than the first region, the first distance being different from the second distance.08-25-2011
20090008664NANOWIRE LIGHT EMITTING DEVICE - A nanowire light emitting device is provided. The nanowire light emitting device includes a substrate, a first conductive layer formed on the substrate, a plurality of nanowires vertically formed on the first conductive layer, each nanowire comprising a p-doped portion and an n-doped portion, a light emitting layer between the p-doped portion and the n-doped portion, a second conductive layer formed on the nanowires, and an insulating polymer in which a light emitting material is embedded, filling a space between the nanowires. The color of light emitted from the light emitting layer varies according to the light emitting material.01-08-2009
20090039368LIGHT-EMITTING DEVICE - A light-emitting device offering satisfactory light emission characteristics combined with improved reliability has a substrate on the principal surface of which a non-polar electrode layer is formed, an LED chip mounted in a predetermined region on the non-polar electrode layer, a plurality of cathode and anode electrode layers formed on the principal surface of the substrate for supplying electric power to the LED chip, and a reflective frame formed of a metal material containing aluminum as its main content, the reflective frame having its inner circumferential surface formed into a reflective surface for reflecting the light from the LED chip. The reflective frame is fixed, directly, or indirectly with adhesive, to the non-polar electrode layer so as to surround the LED chip, with the inside of the reflective frame sealed with a light-transmitting member. An anodized aluminum coat with a thickness of 2 μm to 10 μm is formed by anodization at least on the inner circumferential surface, formed into the reflective surface, of the reflective frame.02-12-2009
20090039365SEMICONDUCTOR LIGHT EMITTING DEVICES WITH APPLIED WAVELENGTH CONVERSION MATERIALS AND METHODS OF FORMING THE SAME - A semiconductor structure includes an active region configured to emit light upon the application of a voltage thereto, a window layer configured to receive the light emitted by the active region, and a plurality of discrete phosphor-containing regions on the window layer and configured to receive light emitted by the active region and to convert at least a portion of the received light to a different wavelength than a wavelength of light emitted by the active region. Methods of forming a semiconductor structure including an active region configured to emit light and a window layer include forming a plurality of discrete phosphor-containing regions on the window layer.02-12-2009
20090261369Light-Emitting Device and Manufacturing Method Thereof - A first conductive film, a first insulating film, a semiconductor film, an impurity semiconductor film, and a second conductive film are stacked in this order (a thin-film stacked body); first etching is performed to expose the first conductive film and form at least a pattern of the thin-film stacked body; second etching is performed to form a pattern of the first conductive film. The second etching is performed under a condition in which the first conductive film is side-etched. Further, after forming the patterns, an EL layer can be formed selectively by utilizing a depression and a projection due to the patterns.10-22-2009
20090261373LOW OPTICAL LOSS ELECTRODE STRUCTURES FOR LEDS - An electrode structure is disclosed for enhancing the brightness and/or efficiency of an LED. The electrode structure can have a metal electrode and an optically transmissive thick dielectric material formed intermediate the electrode and a light emitting semiconductor material. The electrode and the thick dielectric cooperate to reflect light from the semiconductor material back into the semiconductor so as to enhance the likelihood of the light ultimately being transmitted from the semiconductor material. Such LED can have enhanced utility and can be suitable for uses such as general illumination.10-22-2009
20090261372SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor light emitting device is composed of a blue light emitting diode, a red light emitting layer grown epitaxially on the blue light emitting diode, and an insulating material containing a YAG fluorescent material. The red light emitting layer is made of, e.g., undoped In10-22-2009
20090261370SEMICONDUCTOR LIGHT EMITTING DEVICE - Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, a second conductive semiconductor layer under the active layer, a second electrode layer under the second conductive semiconductor layer, and a transmissive conductive layer at least one part between the second conductive semiconductor layer and the second electrode layer.10-22-2009
20090261368LED CHIP PACKAGE STRUCTURE USING A SUBSTRATE AS A LAMPSHADE AND METHOD FOR MAKING THE SAME - An LED chip package structure using a substrate as a lampshade includes a substrate unit and a light-emitting unit. The substrate unit has a substrate body with a lampshade shape. The light-emitting unit has a plurality of light-emitting elements electrically disposed on an inner surface of the substrate body. Therefore, one part of light beams projected by the light emitting elements is reflected out of the lampshade by the inner surface of the substrate body.10-22-2009
20100133574LIGHT EMITTING DEVICE WITH MULTILAYER SILICON-CONTAINING ENCAPSULANT - A light emitting device that includes a light emitting diode and a multilayer encapsulant is disclosed. The multilayer encapsulant includes a first encapsulant in contact with the light emitting diode and a photopolymerizable composition in contact with the first encapsulant. The first encapsulant may be a silicone gel, silicone gum, silicone fluid, organosiloxane, polysiloxane, polyimide, polyphosphazene, sol-gel composition, or another photopolymerizable composition. The photopolymerizable compositions include a silicon-containing resin and a metal-containing catalyst, the silicon-containing resin comprising silicon-bonded hydrogen and aliphatic unsaturation. Actinic radiation having a wavelength of 700 nm or less can be applied to initiate hydrosilylation within the silicon-containing resins.06-03-2010
20100127293LED Module with Color Conversion Layer Designed for a Homogenous Color Distribution - An LED module having an LED semiconductor chip mounted directly or indirectly on a platform. The platform is made from silicon and is extends laterally beyond the LED semiconductor chip having an active light emitting layer and a substrate. At least one electronic component that is part of the control circuitry for the LED semiconductor chip is integrated in the silicon platform.05-27-2010
20100127294SIDE VIEW TYPE LIGHT-EMITTING DIODE PACKAGE STRUCTURE, AND MANUFACTURING METHOD AND APPLICATION THEREOF - A side view type light-emitting diode package structure, and a manufacturing method and an application thereof are described. The side view type light-emitting diode package structure includes a silicon base, a first and a second conductive leads and at least one light-emitting diode chip. The silicon base includes a first cavity defining a light-extracting surface of the package structure. The first and the second conductive leads are respectively disposed at least on a portion and another portion of the first cavity and extend to an outer surface of the silicon base. The first and the second conductive leads are electrically isolated from each other. The light-emitting diode chip includes a first and second electrodes electrically connected to the first and the second conductive leads respectively, wherein the surface on the outer side of the silicon base is substantially perpendicular to the light-extracting surface.05-27-2010
20100127289Method and Apparatus for Providing LED Package with Controlled Color Temperature - An optical device capable of illuminating visual light with adjusting color temperature after fabrication is disclosed. The optical device includes a solid state light emitter and a phosphor layer, which is formed over the solid state light emitter. The solid state light emitter, which can be a light emitter diode (“LED”), converts electrical energy to blue light. The phosphor layer subsequently converts first light with a first wavelength to second light with a second wavelength. In one example, the first light is blue light while the second light is white light. A portion of the phosphor layer is adjusted after the phosphor layer is formed for adjusting color of the white light in accordance with color quality of the light detected by a light detector.05-27-2010
20110266567Method for Producing a Radiation-Emitting Component and Radiation-Emitting Component - A method for manufacturing a radiation-emitting component (11-03-2011
20110266579SEMICONDUCTOR LIGHT-EMITTING DEVICE, LIGHT-EMITTING MODULE, AND ILLUMINATION DEVICE - A semiconductor light-emitting device having a substrate on which a semiconductor multilayer film is disposed, the semiconductor multilayer film having a layered structure in which a first conductive layer, a light-emitting layer and a second conductive layer are layered above the substrate from bottom to top in the stated order, and being divided into portions by grooves extending perpendicular to the substrate, each portion having a diode structure and serving as a light-emitting element 11-03-2011
20110266574LED PACKAGE - An LED package includes a substrate, an LED die, and an encapsulating layer. The LED die is arranged on the substrate. The encapsulating layer covers the LED die and at least a part of the substrate. The encapsulating layer includes a light dispersing element. A light scattering intensity of the light dispersing element is proportional to the light intensity of light generated by the LED die and illuminated at the encapsulating layer. A luminance at a center of the LED package is substantially identical to that at a circumference of the LED package.11-03-2011
20110266584WHITE LIGHT EMITTING DIODE WITH YELLOW, GREEN AND RED LIGHT EMITTING PHOSPHORS - Provided is a white light emitting diode (LED) including a blue LED chip; and yellow, green, and red light emitting phosphors that are coated on the blue LED chip at a predetermined mixing ratio and converts light, emitted from the blue LED chip, into white light.11-03-2011
20110204405LIGHT EMITTING MODULE, METHOD OF MANUFACTURING THE LIGHT EMITTING MODULE, AND LAMP UNIT - In a light emitting module 40, a light wavelength conversation ceramic 52 converts the wavelength of the light emitted by a semiconductor light emitting element 48 then emits the light. An optical filter 50 transmits the blue light Lb mainly emitted by the semiconductor light emitting element 48 and reflects the yellow light Ly whose wavelength has been mainly converted by the light wavelength conversion ceramic 52. The optical filter 50 is provided on the surface of the light wavelength conversion ceramic 52. The light emitting module 40 is manufactured by: the process where the optical filter 50 is provided on at least one surface of the light wavelength conversion ceramic 52; and the process where the semiconductor light emitting element 48 and the light wavelength conversion ceramic 52 are arranged such that the light emitted by the semiconductor light emitting element 48 is incident into the light wavelength conversion ceramic 52.08-25-2011
20100283077LIGHT EMITTING DIODES INCLUDING OPTICALLY MATCHED SUBSTRATES - Light emitting diodes include a diode region comprising a gallium nitride-based n-type layer, an active region and a gallium nitride-based p-type layer. A substrate is provided on the gallium nitride-based n-type layer and optically matched to the diode region. The substrate has a first face remote from the gallium nitride-based n-type layer, a second face adjacent the gallium nitride-based n-type layer and a sidewall therebetween. At least a portion of the sidewall is beveled, so as to extend oblique to the first and second faces. A reflector may be provided on the gallium nitride-based p-type layer opposite the substrate. Moreover, the diode region may be wider than the second face of the substrate and may include a mesa remote from the first face that is narrower than the first face and the second face.11-11-2010
20100102353III-Nitride Semiconductor Light Emitting Device - The present disclosure relates to a III-nitride semiconductor light-emitting device including a substrate, a plurality of III-nitride semiconductor layers positioned on the substrate and including an active layer which generates light by recombination of electrons and holes, and a surface scattering the light generated in the active layer, the scattering surface including a first surface which is etched and a second surface which caps the first surface.04-29-2010
20100283078TRANSPARENT MIRRORLESS LIGHT EMITTING DIODE - An (Al, Ga, In)N light emitting diode (LED) in which multi-directional light can be extracted from one or more surfaces of the LED before entering a shaped optical element and subsequently being extracted to air. In particular, the (Al, Ga, In)N and transparent contact layers (such as ITO or ZnO) are embedded in or combined with a shaped optical element, which may be an epoxy, glass, silicon or other material molded into a sphere or inverted cone shape, wherein most of the light entering the inverted cone shape lies within a critical angle and is extracted. The present invention also minimizes internal reflections within the LED by eliminating mirrors and/or mirrored surfaces, in order to minimize re-absorption of the LED's light by the emitting layer (or the active layer) of the LED. To assist in minimizing internal reflections, transparent electrodes, such as ITO or ZnO, may be used. Surface roughening by patterning or anisotropically etching (i.e., creating microcones) may also assist in light extraction, as well as minimizing internal reflections.11-11-2010
20100102352III-Nitride Semiconductor Light Emitting Device - The present disclosure relates to a III-nitride semiconductor light-emitting device including a substrate with a scattering zone formed therein, and a plurality of III-nitride semiconductor layers including a first III-nitride semiconductor layer formed over the substrate and having a first conductivity type, a second III-nitride semiconductor layer formed over the first III-nitride semiconductor layer and having a second conductivity type different from the first conductivity type, and an active layer disposed between the first III-nitride semiconductor layer and the second III-nitride semiconductor layer and generating light by recombination of electrons and holes.04-29-2010
20100283074LIGHT EMITTING DIODE WITH BONDED SEMICONDUCTOR WAVELENGTH CONVERTER - A light emitting diode (LED) has various LED layers provided on a substrate. A multilayer semiconductor wavelength converter, capable of converting the wavelength of light generated in the LED to light at a longer wavelength, is attached to the upper surface of the LED by a bonding layer. One or more textured surfaces within the LED are used to enhance the efficiency at which light is transported from the LED to the wavelength converter. In some embodiments, one or more surfaces of the wavelength converter is provided with a textured surface to enhance the extraction efficiency of the long wavelength light generated within the converter.11-11-2010
20100102346RESONANT CAVITY OPTICAL RADIATION EMISSION DEVICE AND PROCESS FOR MANUFACTURING SAME - A device having an FET structure for the emission of an optical radiation integrated on a substrate of a semiconductor material, includes a first mirror, a second mirror of a dielectric type and an active layer comprising a main zone designed to be excited to generate the radiation. The device also includes a first electrically conductive layer containing two doped regions constitutes a source well and a drain well between which a current flows, a second electrically conductive layer which constitutes a gate, and a dielectric region between the first and second layer, to space corresponding peripheral portions of the first and second layers so that the current is channelled in the main zone for generating excitation radiation. The first and second electrically conductive layers and the active layer define an optical cavity.04-29-2010
20100102340SEMICONDUCTOR LIGHT EMITTING DEVICE, AND BACKLIGHT AND DISPLAY DEVICE COMPRISING THE SEMICONDUCTOR LIGHT EMITTING DEVICE - The present invention provides a semiconductor light emitting device comprising a light intensity difference reducing layer provided between an ultraviolet semiconductor light emitting element and a wavelength converting material layer, and a backlight and a display device comprising the semiconductor light emitting device. The semiconductor light emitting device is an LED light emitting device which has improved uniformity of emitted light and reduced non-uniformity of brightness and chromaticity of emitted light. The light emitting device according to the present invention is particularly suitable for use in various display devices, preferably, for example, in display devices in equipment where a reduction in size, a reduction in weight, a reduction in thickness, electric power saving, high brightness, and excellent color rendering properties are particularly required, for example, cellular phones, personal digital assistants, electronic dictionaries, digital cameras, computers, liquid crystal televisions (TVs), and peripheral devices of these devices.04-29-2010
20100102342Semiconductor light-emitting device - A semiconductor light-emitting device capable of increasing an amount of light irradiated to the outside is provided.04-29-2010
20100283072Quantum dot-based light sheets useful for solid-state lighting - A quantum dot-based light sheet or film is disclosed. In certain embodiments, a quantum dot-based light sheet includes one or more films or layers comprising quantum dots (QD) disposed on at least a portion of a surface of a waveguide and one or more with LEDs optically coupled to the waveguide. The film or layer can be continuous or discontinuous. The film or layer can optionally further include a host material in which the quantum dots are dispersed. A solid state light-device including a quantum-dot based sheet or film or optical component disclosed herein is also provided.11-11-2010
20100283073Thin-Film LED Having a Mirror Layer and Method for the Production Thereof - A thin-film LED comprising a barrier layer (11-11-2010
20110204404LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM - Provided is a light emitting device. The light emitting device includes a conductive support substrate, an ohmic contact layer, a current blocking layer, a light emitting structure layer, an electrode, and a first current guide layer. The ohmic contact layer and the current blocking layer are disposed on the conductive support substrate. The light emitting structure layer is disposed on the ohmic contact layer and the current blocking layer. The electrode is disposed on the light emitting structure layer. At least a part of the electrode is overlapped with the current blocking layer. The first current guide layer is disposed between the current blocking layer and the conductive support substrate. At least a part of the first current guide layer is overlapped with the current blocking layer.08-25-2011
20110204399LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM - A light emitting device includes a substrate, at least one electrode, a first contact layer, a second contact layer, a light emitting structure layer, and an electrode layer. The electrode is disposed through the substrate. The first contact layer is disposed on a top surface of the substrate and electrically connected to the electrode. The second contact layer is disposed on a bottom surface of the substrate and electrically connected to the electrode. The light emitting structure layer is disposed above the substrate at a distance from the substrate and electrically connected to the first contact layer. The light emitting structure layer includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The electrode layer is disposed on the light emitting structure layer.08-25-2011
20110204397LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, METHOD OF MANUFACTURING LIGHT EMITTING DEVICE, AND LIGHTING SYSTEM - A light emitting device includes a first light extraction structure including a reflective layer and a pattern; an ohmic layer on the first light extraction structure; a second conductive type semiconductor layer on the ohmic layer; an active layer on the second conductive type semiconductor layer; and a first conductive type semiconductor layer on the active layer, wherein the pattern has a refractive index that is higher than that of air and lower than that of the second conductive type semiconductor layer.08-25-2011
20110204407Power LED device with a reflector made of aromatic polyester and/or wholly aromatic polyester - A Power LED device including a reflector and a light emitting diode (LED). The reflector is made of aromatic polyester and/or wholly aromatic polyester.08-25-2011
20110204402Light Emitting Device, Light Emitting Device Package, Method of Manufacturing Light Emitting Device and Illumination System - A light emitting device according to the embodiment includes a substrate; a protective layer on the substrate; a electrode layer on the protective layer; a light emitting structure disposed on the electrode layer to generate light and provided with a first semiconductor layer, an active layer under the first semiconductor layer, and a second conductive semiconductor layer under the active layer; and a first electrode having a first end disposed on a top surface of the light emitting structure and a second end disposed on the protective layer. The protective layer comes into Schottky contact with at least one of the electrode layer and the first electrode.08-25-2011
20080251807SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed are a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises a substrate, in which concave-convex patterns are in at least a portion of a backside of the substrate, and a light emitting structure on the substrate and comprising a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer.10-16-2008
20080251805HEAT DISSIPATION PACKAGE FOR HEAT GENERATION ELEMENT - A heat dissipation package is provided. Conducting leads of the package are located between two dissipating parts of a heat dissipation carrier to form the heat dissipation package with a structure of heat outside and electricity inside. Consequently, there is no limitation caused by electrical elements surrounding the heat dissipation carrier, so as to enhance the expandability of the heat dissipation carrier and improve the efficiency for heat dissipation of the heat generation element.10-16-2008
20110198641Semiconductor light-emitting element - A semiconductor light-emitting element includes a semiconductor laminated structure including a light-emitting layer sandwiched between first and second conductivity type layers for extracting an emitted light from the light-emitting layer on a side of the second conductivity type layer, a transparent electrode in ohmic contact with the second conductivity type layer, an insulation layer formed on the transparent electrode, an upper electrode for wire bonding formed on the insulation layer, a lower electrode that penetrates the insulation layer, is in ohmic contact with the transparent electrode and the electrode for wire bonding, and has an area smaller than that of the upper electrode in top view, and a reflective portion for reflecting at least a portion of light transmitted through a region of the transparent electrode not in contact with the lower electrode.08-18-2011
20080237617Adhesive Sheet for Light-Emitting Diode Device and Light-Emitting Diode Device - [Problem] To provide an adhesive sheet which is used for a light-emitting diode device, and which is free from cracks and peeling off of the adhered portions. [Means for Solving the Problem] An adhesive sheet for a light-emitting diode device, which comprises a thermoplastic polymer containing epoxy groups and a compound containing functional groups which are addition reactive with the epoxy groups or a polymerization catalyst which can effect a ring opening polymerization of the epoxy groups, and in which said thermoplastic polymer is cross-linked so that its flowability is restrained.10-02-2008
20100127297SEMICONDUCTOR LIGHT-EMITTING DEVICE - Embodiments relate to a semiconductor light-emitting device.05-27-2010
20100133564Method for Producing Semiconductor Components and Thin-Film Semiconductor Component - The invention relates to a method for producing semiconductor components, wherein a layer composite (06-03-2010
20090166659High Efficiency Group III Nitride LED with Lenticular Surface - A light emitting diode is disclosed having a vertical orientation with an ohmic contact on portions of a top surface of the diode and a mirror layer adjacent the light emitting region of the diode. The diode includes an opening in the mirror layer beneath the geometric projection of the top ohmic contact through the diode that defines a non-contact area between the mirror layer and the light emitting region of the diode to encourage current flow to take place other than at the non-contact area to in turn decrease the number of light emitting recombinations beneath the ohmic contact and increase the number of light emitting recombinations in the more transparent portions of the diode.07-02-2009
20090166658LIGHT EMITTING DIODES INCLUDING TWO REFLECTOR LAYERS - A light emitting diode includes a diode region having a gallium nitride based n-type layer, an active region and a gallium nitride based p-type layer. A first reflector layer is provided on the gallium nitride based p-type layer, and a second reflector layer is provided on the gallium nitride based n-type layer. Bonding layers, a mounting support, a wire bond and/or transparent oxide layers also may be provided.07-02-2009
20090166654LIGHT-EMITTING DIODE WITH INCREASED LIGHT EFFICIENCY - A novel light-emitting diode structure is proposed wherein the epitaxial layers are cleaved to micro-units to suppress transverse propagation of light generated in active layer and improve light extraction efficiency. Further enhancement in light output will be obtained by introducing a light extraction layer with microstructures or directly structuring the top surface of each micro-unit. Another advantage of the method is effective thermal dissipation due to the hollowed-out pattern and possible buried heat conductive materials.07-02-2009
20090166653INCORPORATING REFLECTIVE LAYERS INTO LED SYSTEMS AND/OR COMPONENTS - A light emitting apparatus includes a support having circuitry disposed thereon, at least one light emitting diode (LED) chip mounted on the support and in electrical communication with the circuitry and a reflective layer on the support adjacent the at least one chip.07-02-2009
20090166651LIGHT-EMITTING DEVICE WITH INORGANIC HOUSING - The present invention relates to a light-emitting device comprising at least one light-emitting diode, which emits light, and a housing arranged to receive at least a portion of said light. The housing comprises a translucent inorganic material and is provided with at least one recess, which comprises positioning and orientating means. The at least one light-emitting diode is arranged in the at least one recess and is positioned and orientated by said positioning and orientating means, and a translucent inorganic contact layer material is arranged between the at least one light-emitting diode and the housing in the at least one recess to receive at least portion of the light and to connect said light-emitting diode to said housing.07-02-2009
20130214309LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF, LIGHT EMITTING DEVICE - The present invention provides an LED and the manufacturing method thereof, and a light emitting device. The LED includes a first electrode, for connecting the LED to a negative terminal of a power supply; a substrate, located on the first electrode; and an LED chip, located on the substrate; in which a plurality of contact holes are formed through the substrate, the contact holes are evenly distributed and filled with electrode plugs connecting the first electrode to the LED chip. The light emitting device includes the LED, and further includes a base and an LED mounted on the base. The manufacturing method includes: providing a substrate; forming on the substrate an LED chip and a second electrode successively; forming a plurality of evenly distributed contact holes on a backface of the substrate, the contact holes extending through the substrate and to the LED chip; and filling the contact holes with conducting material till the backface of the substrate is covered by the conducting material. The LED has a high luminous efficiency and the manufacturing method is easy to implement.08-22-2013
20130214310SEMICONDUCTOR PACKAGE AND FABRICATION METHOD THEREOF - A semiconductor package and a fabrication method thereof are disclosed, which is characterized in that a solder material is used to bond an LED chip and a substrate so as to provide a thick joint between the substrate and the LED chip and hence reduce stresses generated between the LED chip and the substrate due to their CTE mismatch, thereby preventing delamination from occurring between the LED chip and the substrate after a reliability test.08-22-2013
20080272385Light emitting diode - A light emitting diode includes a base, a light emitting chip, and a wavelength converting layer. The base is formed with a recessed portion that has a bottom wall surface, and a sidewall surface extending upwardly from the bottom wall surface and cooperating with the bottom wall surface to define a receiving space. The light emitting chip is provided on the bottom wall surface of the receiving space, and has a top chip surface disposed below a top surface of the base, and a peripheral chip surface extending downwardly from the top chip surface and being substantially parallel to and forming a gap with the side wall surface of the recessed portion. The wavelength converting layer is filled in the receiving space in the recessed portion so as to cover the top chip surface and the peripheral chip surface of the light emitting chip.11-06-2008
20120080707SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - There is provided a semiconductor light emitting device and method of making the same, having a first conductivity type semiconductor layer; an active layer formed on the first conductivity type semiconductor layer; a second conductivity type semiconductor layer formed on the active layer and including a plurality of holes; and a transparent electrode formed on the second conductivity type semiconductor layer.04-05-2012
20080277680Led With Improved Light Emittance Profile - The present invention relates to a LED comprising a substrate layer with a first surface and a second surface opposing the first surface and having a refractive index of n11-13-2008
20080277682DUAL SURFACE-ROUGHENED N-FACE HIGH-BRIGHTNESS LED - A light emitting diode, comprising a substrate, a buffer layer on the substrate, an active layer on the buffer layer and between an n-type layer and a p-type layer, a tunnel junction adjacent the p-type layer, and n-type contacts to the tunnel junction and the n-type layer, wherein the buffer layer, n-type layer, p-type layer, active region and tunnel junction comprise III-nitride material grown in a nitrogen-face (N-face) orientation. The substrate surface upon which the III-nitride material is deposited is patterned to provide embedded backside roughening. A top surface of the tunnel junction, which also the top surface of the III-nitride material, is roughened.11-13-2008
20130009183REFLECTIVE CIRCUIT BOARD FOR LED BACKLIGHT - An LED device with improved LED efficiency is presented. A top surface of a circuit board carrying the LED die is covered with a reflective layer. The reflective surface on top of the circuit board allows the light reflected off a surface of a waveguide to be recycled by being redirected back to the waveguide.01-10-2013
20100207141LIGHT EMITTING DEVICE - A light emitting device (LED) is provided. The LED comprises a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. The active layer is on the first conductivity type semiconductor layer. The second conductivity type semiconductor layer is on at least one side of the active layer and the first conductivity type semiconductor layer, and on the active layer.08-19-2010
20080283859LIGHT-EMITTING DIODE APPARATUS AND MANUFACTURING METHOD THEREOF - A light-emitting diode (LED) apparatus includes an epitaxial multilayer, a micro/nano rugged layer and an anti-reflection layer. The epitaxial multilayer has a first semiconductor layer, an active layer and a second semiconductor layer in sequence. The micro/nano rugged layer is disposed on the first semiconductor layer of the epitaxial multilayer. The anti-reflection layer is disposed on the micro/nano rugged layer. In addition, a manufacturing method of the LED apparatus is also disclosed.11-20-2008
20080283858LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME - A light-emitting diode includes: a light-emitting structure, a transparent electrically conductive thick film, a first electrical contact and a second electrical contact. The light-emitting structure includes a first-type cladding layer, a second-type cladding layer, and an active layer sandwiched between the first-type cladding layer and the second-type cladding layer. The transparent electrically conductive thick film is formed on the first-type cladding layer. The first electrical contact is located on the transparent electrically conductive thick film. The second electrical contact is located on the second-type cladding layer. The transparent electrically conductive thick film is made from a metal-doped metal oxide.11-20-2008
20080283856Light-emitting diode module and the manufacturing thereof - A method for manufacturing a light-emitting diode (LED) module is provided. Plural LED package structures are formed on a substrate first. A space is located between two adjacent LED package structures. A Lens laminated plate is subsequently bonded to the LED package structures. The lens laminated plate includes plural lenses, and each lens is located right above a LED of each LED package structure. Finally, plural LED modules are formed by cutting the substrate along the space. A LED module structure is also disclosed.11-20-2008
20080290360Silicon-Based Light Emitting Diode Using Side Reflecting Mirror - A silicon light emitting diode capable of effectively utilizing light radiated toward the lateral side of a substrate by including a side reflecting mirror is provided. The silicon-based light emitting diode includes a p-type silicon substrate having a plurality of grooves, a light emitting diode layer formed on each of the grooves of the silicon substrate, the light emitting diode layer including an active layer, an n-type doped layer, and a transparent electrode layer, and a metal electrode including a lower metal electrode formed on the bottom surface of the p-type silicon substrate and an upper metal electrode formed on the top surface of the transparent electrode layer. The lateral surface of each of the grooves is separated from the light emitting diode layer and used as a reflecting mirror The lateral surface is referred to as the side reflecting mirror.11-27-2008
20080290361LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A light emitting device comprises a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a refractive layer on the active layer, and a second conductive semiconductor layer on the refractive layer.11-27-2008
20080290358Semiconductor light-emitting device and a method to produce the same - A new structure of a semiconductor optical device and a method to produce the device are disclosed. One embodiment of the optical device of the invention provides a blocking region including, from the side close to the mesa, a p-type first layer and a p-type second layer. The first layer is co-doped with an n-type impurity and a p-type impurity. The doping concentration of the p-type impurity in the first layer is smaller than that in the second layer, so, the first layer performs a function of a buffer layer for the Zn diffusion from the second layer to the active layer in the mesa structure.11-27-2008
20120032223ULTRAVIOLET LIGHT EMITTING DIODE PACKAGE - An ultraviolet light emitting diode package for emitting ultraviolet light is disclosed. The ultraviolet light emitting diode package comprises an LED chip emitting light with a peak wavelength of 350 nm or less, and a protective member provided so that surroundings of the LED chip is covered to protect the LED chip, the protective member having a non-yellowing property to energy from the LED chip.02-09-2012
20080303042Method for manufacturing substrate for semiconductor light emitting element and semiconductor light emitting element using the same - A light emitting element having a recess-protrusion structure on a substrate is provided. A semiconductor light emitting element 12-11-2008
20080303047Light-emitting diode device and manufacturing method therof - A light-emitting diode (LED) device and manufacturing methods thereof are disclosed, wherein the LED device comprises a substrate, a plurality of micro-lens, a reflector, a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a first electrode and a second electrode. The substrate has a plurality of micro-lens on its upper surface. The first conductivity type semiconductor layer is on the upper surface of the substrate. The active layer and the second conductivity type semiconductor layer are sequentially on a portion of the first conductivity type semiconductor layer. The first electrode is on the other portion of the first conductivity type semiconductor layer uncovered by the active layer. The second electrode is on the second conductivity type semiconductor layer. The reflector layer is on a lower surface of the substrate.12-11-2008
20120292653SEMICONDUCTOR LIGHT EMITTING DEVICE - Provided is a semiconductor light emitting device. The semiconductor light emitting device includes: a light emitting structure; an electrode layer under the light emitting structure; a light transmitting layer under of the light emitting structure; a reflective electrode layer connected to the electrode layer; and a conductive supporting member under the reflective electrode layer and electrically connected to the reflective electrode layer, wherein the reflective electrode layer includes a first part in contact with an under surface of the electrode layer and a second part spaced apart from the electrode layer.11-22-2012
20120292651LIGHT EMITTING DEVICE PACKAGE AND MANUFACTURING METHOD THEREOF - There is provided a light emitting device package including: a substrate having a cavity formed therein; a heat sink provided on a bottom surface of the cavity to be adjacent to an inner wall of the cavity; a light emitting device mounted on the heat sink; and a phosphor layer provided within the cavity and covering the heat sink and the light emitting device.11-22-2012
20080308832Light-emitting device - A light-emitting device comprises a semiconductor light-emitting stack; and an optical field tuning layer formed on the semiconductor light-emitting stack to change beam angles of the light-emitting device.12-18-2008
20080308831SEMICONDUCTOR STRUCTURE INCLUDING MIXED RARE EARTH OXIDE FORMED ON SILICON - A method (and resultant structure) of forming a semiconductor structure, includes forming a mixed rare earth oxide on silicon. The mixed rare earth oxide is lattice-matched to silicon.12-18-2008
20080308830SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR - An active layer of an NTFT includes a channel forming region, at least a first impurity region, at least a second impurity region and at least a third impurity region therein. Concentrations of an impurity in each of the first, second and third impurity regions increase as distances from the channel forming region become longer. The first impurity region is formed to be overlapped with a side wall. A gate overlapping structure can be realized with the side wall functioning as an electrode.12-18-2008
20080308827PROCESS FOR PREPARING A BONDING TYPE SEMICONDUCTOR SUBSTRATE - The process comprises a step of growing epitaxially mixed crystals of a compound semiconductor represented by the composition formula In12-18-2008
20080308826THIN-FILM TRANSISTOR, ARRAY SUBSTRATE HAVING THE THIN-FILM TRANSISTOR AND METHOD OF MANUFACTURING THE ARRAY SUBSTRATE - A thin-film transistor includes a semiconductor pattern, source and drain electrodes and a gate electrode, the semiconductor pattern is formed on a base substrate, and the semiconductor pattern includes metal oxide. The source and drain electrodes are formed on the semiconductor pattern such that the source and drain electrodes are spaced apart from each other and an outline of the source and drain electrodes is substantially same as an outline of the semiconductor pattern. The gate electrode is disposed in a region between the source and drain electrodes such that portions of the gate electrode are overlapped with the source and drain electrodes. Therefore, leakage current induced by light is minimized. As a result, characteristics of the thin-film transistor are enhanced, after-image is reduced to enhance display quality, and stability of manufacturing process is enhanced.12-18-2008
20080308825Encapsulant with scatterer to tailor spatial emission pattern and color uniformity in light emitting diodes - A light emitting device having an encapsulant with scattering features to tailor the spatial emission pattern and color temperature uniformity of the output profile. The encapsulant is formed with materials having light scattering properties. The concentration of these light scatterers is varied spatially within the encapsulant and/or on the surface of the encapsulant. The regions having a high density of scatterers are arranged in the encapsulant to interact with light entering the encapsulant over a desired range of source emission angles. By increasing the probability that light from a particular range of emission angles will experience at least one scattering event, both the intensity and color temperature profiles of the output light beam can be tuned.12-18-2008
20080308824Thin Flash or Video Recording Light Using Low Profile Side Emitting LED - Very thin flash modules for cameras are described that do not appear as a point source of light to the illuminated subject. Therefore, the flash is less objectionable to the subject. In one embodiment, the light emitting surface area is about 5 mm×10 mm. Low profile, side-emitting LEDs optically coupled to solid light guides enable the flash module to be thinner than 2 mm. The flash module may also be continuously energized for video recording. The module is particularly useful for cell phone cameras and other thin cameras.12-18-2008
20080277681LIGHT EMITTING DIODE - A light emitting diode includes a substrate, a reflecting layer, an active layer, a transparent electrode, a first photonic crystal structure, and a second photonic crystal structure. The reflecting layer is disposed on the substrate. The active layer is disposed on the reflecting layer. The transparent electrode is disposed on the active layer and includes an upper surface and a lower surface. The lower surface of the transparent electrode combines with the active layer. The first photonic crystal structure is formed on the upper surface of the transparent electrode. The second photonic crystal structure formed in the active layer.11-13-2008
20080210961Light emitting device - A light emitting device includes: a die-mounting base having a mounting surface; a light emitting diode mounted on the mounting surface of the die-mounting base and having a top surface facing in a normal direction normal to the mounting surface of the die-mounting base; a first wavelength-converting layer of a first wavelength-converting material formed on the mounting surface of the die-mounting base, enclosing the light emitting diode, and having a top surface; and a second wavelength-converting layer of a second wavelength-converting material formed on the top surface of the first wavelength-converting layer and having a top surface that is aligned with the top surface of the light emitting diode in the normal direction, and that has an area smaller than the top surface of the first wavelength-converting layer and not smaller than the top surface of the light emitting diode.09-04-2008
20080283860Light emitting device - A light emitting device includes an emission portion, an optical control portion for reflecting or refracting light emitted from the emission portion in a predetermined direction, a light guiding member including a light input surface to which the reflected or refracted light is inputted, a refection region formed on a surface thereof for reflecting the inputted light, and a light output surface for externally outputting the reflected light from the refection region, a reflection portion, on which the emission portion is mounted and which covers externally the refection region, for dissipating heat generated from the emission portion and for reflecting light passing through the refection region in a direction of the light output surface, and a space formed between the light guiding member and the reflection portion.11-20-2008
20080272384Light emitting diode - A light emitting diode (LED) having disposed on a top of a package an optical mechanism comprised of multiple grooves or dots to promote optical use efficiency of the packaging through light condensing effects produced by the optical mechanism to collect a light source inside the LED to emit in a given direction through the optical mechanism for effectively reducing discriminating escape of the light source in both right and left sides of the given direction thus to significantly upgrade general luminance performance of the LED.11-06-2008
20080265267Light emitting diode - At un upper part of an AlGaInP based compound semiconductor layer including an active layer 10-30-2008
20080290357LIGHT-EMITTING DIODE PACKAGE - A light-emitting diode (LED) package including a carrier, a pair of conductive wire units, an LED chip, and a control circuit module is provided. The carrier has a carrying portion and a ring frame connected to the periphery of the carrying portion. The carrying portion has a dome-like upper surface and a pair of through holes. The pair of conductive wire units is disposed inside the through holes respectively, and each of the conductive wire units has a conductive wire and an insulating material encapsulating the conductive wire. The LED chip is disposed on the upper surface of the carrier and is electrically connected to the conductive wires. The control circuit module is disposed at a bottom of the carrier and is electrically connected to the conductive wires for controlling the operation of the LED chip.11-27-2008
20100207147Semiconductor light emitting device and method of manufacturing the same - Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; and a second conductive semiconductor layer on the active layer, in which a patterned roughness is formed on a top surface of the second conductive semiconductor layer.08-19-2010
20090315059LIGHT EMITTING DIODE - A light-emitting diode includes a substrate having a main surface, a light-emitting diode device arranged on the main surface, a translucent sealing resin portion sealing the light-emitting diode device so that the light-emitting diode device is implemented as an independent convex portion projecting from the main surface, and a reflector arranged on the main surface so as to surround an outer perimeter of the sealing resin portion with an inclined surface at a distance from the outer perimeter.12-24-2009
20080283855Optoelectronic Thin-Film Chip - An optoelectronic thin-film chip is specified, comprising at least one radiation-emitting region (11-20-2008
20090315057LIGHT-EMITTING APPARATUS, SURFACE LIGHT SOURCE, AND METHOD FOR MANUFACTURING PACKAGE FOR LIGHT-EMITTING APPARATUS - A light-emitting apparatus of the present invention has (i) a semiconductor device which emits light toward a higher position than a substrate and (ii) a plurality of external connection terminals, and includes: a light-reflecting layer, provided on the substrate, which reflects the light emitted by the semiconductor device; and a covering layer which covers at least the light-reflecting layer and which transmits the light reflected by the light-reflecting layer. Further, the semiconductor device is provided on the covering layer, and is electrically connected to the external connection terminals via connecting portions, and the semiconductor device and the connecting portions are sealed with a sealing resin so as to be covered. Therefore, the light-emitting apparatus has increased efficiency with which light is taken out, and can prevent a reflecting layer from being altered, deteriorating, and decreasing in reflectance.12-24-2009
20100127296LIGHT EMITTING APPARATUS AND METHOD FOR MANUFACTURING SAME - A light emitting apparatus, includes: a substrate; a semiconductor device including a semiconductor layer formed integrally on a major surface of the substrate; and a light emitting device formed separately from the substrate. The light emitting device is mounted on the major surface of the substrate, electrically connected to the semiconductor device, and thermally connected to the substrate.05-27-2010
20080210964OPTICAL SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING OPTICAL SEMICONDUCTOR DEVICE - An optical semiconductor device includes: a base substrate which has a concave portion; a light-emitting element which is provided in the concave portion, and which emits light; a prevention member which is provided to the base substrate in a manner of covering a side surface of the concave portion, and which prevents the light emitted by the light-emitting element from being incident on the side surface of the concave portion; and a translucent member which is provided in the concave portion, and which seals the light-emitting element.09-04-2008
20080210969Fabrication of Semiconductor Devices for Light Emission - A semiconductor device for light emission having a plurality of epitaxial layers with an n-type layer for light emission and a p-type layer for light reflection. The p-type layer has at least one seed layer for an outer layer of a conductive metal. The at least at least one seed layer is a material for providing a buffer for differential thermal expansion of the outer layer and the light reflecting layer.09-04-2008
20090014741GROUP OF PHOSPHOR PARTICLES FOR LIGHT-EMITTING DEVICE, LIGHT-EMITTING DEVICE AND BACKLIGHT FOR LIQUID CRYSTAL DISPLAY - A group of phosphor particles for a light-emitting device contains a plurality of types of phosphor particles having different emission peak wavelengths, while phosphor particles of a type having a relatively longer emission peak wavelength have a relatively larger median diameter as compared with phosphor particles of a type having a relatively shorter emission peak wavelength.01-15-2009
20090014738Light emitting diode devices and manufacturing method thereof - A light emitting diode (LED) device includes a stacked epitaxial structure, a heat-conductive plate and a seed layer. The stacked epitaxial structure sequentially includes a first semiconductor layer (N—GaN), a light emitting layer, and a second semiconductor layer (P—GaN). The heat-conductive plate is disposed on the first semiconductor layer, and the seed layer is disposed between the first semiconductor layer and the heat-conductive plate. Also, the present invention discloses a manufacturing method thereof including the steps of: forming at least one temporary substrate, which is made by a curable polymer material, on an LED device, and forming at least a heat-conductive plate on the LED device.01-15-2009
20090014736Coating method utilizing phosphor containment structure and devices fabricated using same - Methods for fabricating a semiconductor devices, and in particular light emitting diodes (LEDS) comprising providing a plurality of semiconductor devices on a substrate and forming a contact on at least some of the semiconductor devices. A containment structure is formed on at least some of the semiconductor devices having a contact with each containment structure defining a deposition area excluding the contact. A coating material is deposited then within the deposition area, with the coating material not covering the contact. A light emitting diode (LED) chip wafer comprising a plurality of LEDs on a substrate wafer with at least some of the LEDs having a contact. A plurality of containment structures are included, each of which is associated with a respective one of the plurality of LEDs. Each of the containment structures at least partially on its respective one of the LEDs and defining a deposition area on its respective one of the LEDs. The deposition area excludes the contact. A coating is included in each of the deposition areas.01-15-2009
20090014735Semiconductor device and semiconductor device fabrication method - There is provided a semiconductor device in which a light emitting element is mounted on a substrate, having a bonding wire which is connected to the light emitting element, and a through electrode which is connected to the bonding wire and is formed in such a manner as to pass through the substrate at a position lying directly below a connecting portion with the bonding wire.01-15-2009
20080303044SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device includes a semiconductor light-emitting element which is capable of emitting light, a fluorescent substance which is capable of absorbing at least part of light emitted from the semiconductor light-emitting element and also capable of subsequently converting the wavelength of the absorbed light and emitting the light having a converted wavelength, and a light-transmissive sealing material encapsulating the semiconductor light-emitting element, formed of an inorganic material having, at least partially, a silicon-nitrogen linkage and including a fluorescent substance.12-11-2008
20080203419Semiconductor Light Emitting Apparatus - A semiconductor light emitting apparatus can be configured to reduce color variations and intensity variations with a simple configuration. The semiconductor light emitting apparatus can include a substrate having conductive members including chip mounting areas and electrode areas, a plurality of semiconductor light emitting device chips mounted in the chip mounting areas on the substrate, a reflector formed on this substrate so as to surround the semiconductor light emitting device chips, and a fluorescent material and a light diffusing material arranged distributedly inside this reflector. The semiconductor light emitting apparatus can be configured so that the semiconductor light emitting device chips emit light only from their top surfaces, and a first light transmitting resin containing the fluorescent material is applied only to the top surfaces of the semiconductor light emitting device chips.08-28-2008
20080246048Semiconductor Light-Emitting Device - A semiconductor light-emitting device, the device includes a substrate, a semiconductor stacked layer, a lead electrode and a lead, wherein the semiconductor stacked layer at least includes a N-type layer and a P-type layer, at least one of the N-type layer and the P-type layer has an opening, the opening is just beneath the lead; or includes a conductive substrate having a main surface and a back surface, an adhesive metal layer, a reflective/ohmic metal layer, a semiconductor stacked layer, a lead electrode and a lead sequentially deposited on the main surface of the substrate, the reflective/ohmic metal layer has an opening, the opening is just beneath the lead.10-09-2008
20080303046SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes a silicon substrate, a p-type semiconductor layer provided on the silicon substrate, a n-type semiconductor layer provided on the silicon substrate, the n-type semiconductor layer adjoining the p-type semiconductor layer, and a light emitting section formed at a p-n homojunction between the p-type semiconductor layer and the n-type semiconductor layer. The p-n homojunction is substantially perpendicular to a major surface of the silicon substrate. The p-n homojunction is corrugated with a period matched with an integer multiple of an emission wavelength at the light emitting section.12-11-2008
20100264435White light-emitting diode package structure for simplifying package process and method for making the same - A white light-emitting diode package structure for simplifying package process includes a substrate unit, a light-emitting unit, a phosphor unit and a conductive unit. The light-emitting unit is disposed on the substrate, and the light-emitting unit has a positive conductive layer and a negative conductive layer. The phosphor unit has a phosphor layer formed on the light-emitting unit and at least two openings for respectively exposing one partial surface of the positive electrode layer and one partial surface of the negative electrode layer. The conductive unit has at least two conductive wires respectively passing through the two openings in order to electrically connect the positive electrode layer with the substrate unit and electrically connect the negative electrode layer with the substrate unit.10-21-2010
20130119419MAGNETICALLY ADJUSTING COLOR-CONVERTING MATERIALS WITHIN A MATRIX AND ASSOCIATED DEVICES, SYSTEMS, AND METHODS - Magnetically adjusting color-converting particles within a matrix and associated devices, systems, and methods are disclosed herein. A magnetic-adjustment process can include applying a magnetic field to a mixture including a non-solid matrix and a plurality of color-converting particles (e.g. magnetically anisotropic color-converting particles). The magnetic field can cause the plurality of color-converting particles to move into a generally non-random alignment (e.g., a generally non-random magnetic alignment and/or a generally non-random shape alignment) within the non-solid matrix. The non-solid matrix then can be solidified to form a solid matrix. A magnetic-adjustment process can be performed in conjunction with testing and/or product binning of solid-state radiation transducer devices. For example, a position, direction, strength, or duration of a magnetic field used to perform a magnetic-adjustment process can be controlled according to optical output collected from a solid-state radiation transducer device. Measuring the optical output and performing the magnetic-adjustment process can be at least partially concurrent.05-16-2013
20130119420LIGHT EMITTING DEVICE - A light emitting device is disclosed. The light emitting device includes an electrode, which includes a reflective electrode layer disposed over a second semiconductor layer and a bonding electrode layer disposed in at least a partial region of an outer side surface of the reflective electrode layer while coming into contact with the second semiconductor layer. Thus, it may be possible to enhance bonding reliability between the electrode and the semiconductor layer.05-16-2013
20130119421LIGHT EMITTING DIODE EPITAXIAL STRUCTURE AND MANUFACTURING METHOD OF THE SAME - An LED epitaxial structure includes a substrate, a buffer layer, a functional layer and a light generating layer. The buffer layer is located on a top surface of the substrate. The functional layer includes a plurality of high-temperature epitaxial layers and low-temperature epitaxial layers alternatively arranged between the buffer layer and light generating layer. A textured structure is formed in the low-temperature epitaxial layer. A SiO2 layer including a plurality of convexes is located on the textured structure to increase light extraction efficiency of the LED epitaxial structure. A manufacturing method of the LED epitaxial structure is also disclosed.05-16-2013
20130119422SEMICONDUCTOR LIGHT EMITTING DEVICE, LIGHT EMITTING MODULE, LIGHTING APPARATUS AND DISPLAY ELEMENT - A semiconductor light emitting device has a multilayer epitaxial structure for emitting light by a light emitting layer located between a first conductive layer and a second conductive layer. The multilayer epitaxial structure can be grown directly on a base substrate. A reflective layer can be provided in the multilayer epitaxial structure between the base substrate and the first conductive layer. A distributive Bragg reflector can be positioned adjacent the substrate. A surface of the multilayer epitaxial structure can be conformed to provide improved light extraction. A phosphorus film encapsulates the multilayer epitaxial structure and its respective side surfaces.05-16-2013
20130119423SEMICONDUCTOR LIGHT EMITTING DEVICE AND PACKAGE - A semiconductor light emitting device and package containing the same include: a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A light extraction layer is disposed on the light emitting structure and includes a light-transmissive thin film layer having light transmittance, a nano-rod layer including nano-rods disposed on the light-transmissive thin film layer, and a nano-wire layer including nano-wires disposed on the nano-rod layer.05-16-2013
20130119424LIGHT EMITTING DEVICE AND LIGHT EMITTING APPARATUS HAVING THE SAME - A light emitting device is provided a transmissive substrate; a first pattern portion including a protrusions; a second pattern portion including a concaves having a width smaller than a width of each protrusion; a light emitting structure under the transmissive substrate and including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer; a first electrode under the first conductive semiconductor layer; a reflective electrode layer under the second conductive semiconductor layer; a second electrode under the reflective electrode layer; a first connection electrode under the first electrode; a second connection electrode under the second electrode; and an insulating support member around the first electrode and the first connection electrode and around the second electrode and the second connection electrode and including a ceramic-based thermal diffusion agent.05-16-2013
20130119425LIGHT EMITTING ELEMENT AND LIGHT EMITTING DEVICE USING THE SAME - An object of the present invention is to provide a light emitting element having slight increase in driving voltage with accumulation of light emitting time. Another object of the invention is to provide a light emitting element having slight increase in resistance value with increase in film thickness. A light emitting element of the invention includes a first layer for generating holes, a second layer for generating electrons and a third layer comprising a light emitting substance between first and second electrodes. The first and third layers are in contact with the first and second electrodes, respectively. The second and third layers are connected to each other so as to inject electrons generated in the second layer into the third layer when applying the voltage to the light emitting element such that a potential of the second electrode is higher than that of the first electrode.05-16-2013
20080265269White light emitting device and white light source module using the same - A white light emitting device including: a blue light emitting diode chip having a dominant wavelength of 443 to 455 nm; a red phosphor disposed around the blue light emitting diode chip, the red phosphor excited by the blue light emitting diode chip to emit red light; and a green phosphor disposed around the blue light emitting diode chip, the green phosphor excited by the blue light emitting diode chip to emit green light, wherein the red light emitted from the red phosphor has a color coordinate falling within a space defined by four coordinate points (0.5448, 0.4544), (0.7079, 0.2920), (0.6427, 0.2905) and (0.4794, 0.4633) based on the CIE 1931 chromaticity diagram, and the green light emitted from the green phosphor has a color coordinate falling within a space defined by four coordinate points (0.1270, 0.8037), (0.4117, 0.5861), (0.4197, 0.5316) and (0.2555, 0.5030) based on the CIE 1931 color chromaticity diagram.10-30-2008
20110006334WHITE LED LAMP, BACKLIGHT, LIGHT EMITTING DEVICE, DISPLAY DEVICE AND ILLUMINATION DEVICE - A white LED lamp including: a conductive portion; a light emitting diode chip mounted on the conductive portion, for emitting a primary light having a peak wavelength of 360 nm to 420 nm; a transparent resin layer including a first hardened transparent resin, for sealing the light emitting diode chip; and a phosphor layer covering the transparent resin layer, the phosphor layer being formed by dispersing a phosphor powder into a second hardened transparent resin, and the phosphor powder receiving the primary light and radiating a secondary light having a wavelength longer than that of the primary light. An energy of the primary light contained in the radiated secondary light is 0.4 mW/lm or less. In the white LED lamp, a backlight, and an illumination device using the white LED lamp an amount of UV light to be contained in the released light and an amount of heat to be generated from the lamp are decreased to be small.01-13-2011
20110006333LIGHT EMITTING DIODE DEVICE - The invention relates to a light emitting diode device comprising a light emitting layer (01-13-2011
20110006327ORGANIC LIGHT EMITTING DIODE DISPLAY - An organic light emitting diode (OLED) display according to an exemplary embodiment includes a substrate main body, a plurality of organic light emitting elements formed on the substrate main body, an encapsulation thin film formed on the substrate main body thereby covering the plurality of organic light emitting elements, and a disparity barrier rib layer formed on a boundary region between the plurality of organic light emitting elements.01-13-2011
20110006324Lighting Device - The present invention provides a lighting device with a chip housing with at least one recess, which is defined by a reflective internal surface. The lighting device also includes at least one radiation-emitting semiconductor chip with a chip surface, which is arranged in the recess. A chip-remote angular filter element is integrated into the chip housing and is arranged downstream of the semiconductor chip in a preferred direction. The reflective internal surface is at least ten times as large as the chip surface.01-13-2011
20100133575LOW OPTICAL LOSS ELECTRODE STRUCTURES FOR LEDS - An electrode structure is disclosed for enhancing the brightness and/or efficiency of an LED. The electrode structure can have a metal electrode and an optically transmissive thick dielectric material formed intermediate the electrode and a light emitting semiconductor material. The electrode and the thick dielectric cooperate to reflect light from the semiconductor material back into the semiconductor so as to enhance the likelihood of the light ultimately being transmitted from the semiconductor material. Such LED can have enhanced utility and can be suitable for uses such as general illumination.06-03-2010
20100140650Light emitting element, light emitting device using the light emitting element, and method for manufacturing light emitting element - A light emitting device includes a light emitting element, including a substrate including group III nitride compound semiconductor, a luminous layer structure including group III nitride compound semiconductor, the luminous layer structure formed on a first surface of the substrate, and an irregular surface formed on a second surface of the substrate, the second surface including a principal light emission surface, and a translucent sealing member for sealing the light emitting element, the translucent sealing member being separated from the second surface. At least one of translucent gel material and an inert gas is filled between the light emitting element and the translucent sealing member.06-10-2010
20100200886WAVELENGTH-CONVERTED SEMICONDUCTOR LIGHT EMITTING DEVICE - Embodiments of the invention include a light emitting structure comprising a light emitting layer. A first luminescent material comprising a phosphor is disposed in a path of light emitted by the light emitting layer. A second luminescent material comprising a semiconductor is also disposed in a path of light emitted by the light emitting layer. The second luminescent material is configured to absorb light emitted by the light emitting layer and emit light of a different wavelength. In some embodiments, one of the first and second luminescent materials may be bonded to the semiconductor structure.08-12-2010
20090179215Semiconductor light emitting device and fabrication method for the semiconductor light emitting device - A semiconductor light emitting device includes a first metal layer placed on the p-type semiconductor layer on the substrate, and includes a first pattern width W07-16-2009
20100140646SEMICONDUCTOR LIGHT EMITTING DIODE - A semiconductor LED is disclosed. The semiconductor LED can include a light emitting structure, which can be composed of an N-type semiconductor layer, an active layer, and a P-type semiconductor layer stacked in said order; a transparent electrode, formed on an upper surface of the light emitting structure; and a P-type electrode, formed on an upper surface of the transparent electrode. An insulator for blocking electric currents can be formed within the light emitting structure, at a position corresponding with the position of the P-type electrode. Certain embodiments of the invention can be used to prevent the occurrences of light reflecting off the lower surface of the P-type electrode, and thereby improve light-emitting efficiency.06-10-2010
20100140647SEMICONDUCTOR LIGHT EMITTING DIODE - A semiconductor LED and a method manufacturing the semiconductor LED are disclosed. The method can include: forming a light emitting structure, which includes an N-type semiconductor layer, an active layer, and a P-type semiconductor layer stacked together, on a substrate; processing a division groove in the shape of a dotted line from the direction of the substrate or from the direction of the light emitting structure; and dividing the substrate and the light emitting structure along the division groove by applying pressure to at least one of the substrate and the light emitting structure. Embodiments of the invention can prevent total reflection for light emitted through the sides, and as a result, the light emitting efficiency can be improved.06-10-2010
20080258163Semiconductor light-emitting device with high light-extraction efficiency - The invention discloses a semiconductor light-emitting device and a fabricating method thereof. The semiconductor light-emitting device according to the invention includes a substrate, a multi-layer structure, a top-most layer, and at least one electrode. The multi-layer structure is formed on the substrate and includes a light-emitting region. The top-most layer is formed on the multi-layer structure, and the lower part of the sidewall of the top-most layer exhibits a first surface morphology relative to a first pattern. In addition, the upper part of the sidewall of the top-most layer exhibits a second surface morphology relative to a second pattern. The at least one electrode is formed on the top-most layer. Therefore, the sidewall of the semiconductor light-emitting device according to the invention exhibits a surface morphology, which increases the light-extraction area of the sidewall, and consequently enhances the light-extraction efficiency of the semiconductor light-emitting device.10-23-2008
20100270570LIGHT EMITTING ELEMENT - The present invention provides a light emitting element comprising a first substrate, a light emitting unit disposed on the first substrate, at least a selective reflection layer disposed on an emitting side of the light emitting unit so that a light of a first color emitted from the light emitting unit passes through the selective reflection layer, and a fluorescent layer disposed on the emitting side of the light emitting unit and converting the light of the first color passing therethrough into a light of a second color, wherein a light of a mixed color is formed by the lights of the first and second color and only the light of the second color is reflected by the selective reflection layer.10-28-2010
20090152580LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A light-emitting chip includes a base, a transparent material layer and a light-emitting chip. The base has an upper surface including a conductive pattern. The transparent material layer is disposed on the upper surface of the base and has an opening part which is located on region at least part of the conductive pattern. The light-emitting chip is mounted on the conductive pattern and located in the opening part of the transparent material layer.06-18-2009
20100140653LIGHT EMITTING DIODE STRUCTURE AND METHOD FOR FABRICATING THE SAME - The present invention discloses a light emitting diode structure and a method for fabricating the same. In the present invention, a substrate is placed in a solution to form a chemical reaction layer on carved regions; the carved region is selectively etched to form a plurality of concave zones and form a plurality of convex zones; a semiconductor layer structure is epitaxially grown on the element regions and carved regions of the substrate; the semiconductor layer structure on the element regions is fabricated into a LED element with a photolithographic process.06-10-2010
20100140652SURFACE-TEXTURED ENCAPSULATIONS FOR USE WITH LIGHT EMITTING DIODES - Surface-textured encapsulations for use with light emitting diodes. In an aspect, a light emitting diode apparatus is provided that includes a light emitting diode, and an encapsulation formed upon the light emitting diode and having a surface texture configured to extract light. In an aspect, a method includes encapsulating a light emitting diode with an encapsulation having a surface texture configured to extract light. In an aspect, a light emitting diode lamp is provided that includes a package, at least one light emitting diode disposed within the package, and an encapsulation formed upon the at least one light emitting diode having a surface texture configured to extract light. In another aspect, a method includes determining one or more regions of an encapsulation, the encapsulation configured to cover a light emitting diode, and surface-texturing each region of the encapsulation with one or more geometric features that are configured to extract light.06-10-2010
20100140642LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - The light emitting device of the invention comprises a first electrode, a second electrode being light transmitting, and a carrier sandwiched between the first electrode and the second electrode and containing light emitters, wherein the first electrode has a plurality of projections or a pn junction formed with a p-type semiconductor and an n-type semiconductor each on a surface being in contact with the carrier.06-10-2010
20100140648SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR PRODUCING THE SAME - A semiconductor light emitting device can be configured to maintain high luminance and to suppress the possibility of the occurrence of wire breakage with high quality and reliability. A method for producing such a semiconductor light emitting device with a high process yield is also disclosed. The semiconductor light emitting device can include a sealing member into which a reflective filler can be mixed in such an amount (concentration) range that luminous flux with a predetermined amount can be maintained and the possibility of the occurrence of wire breakage can be lowered. Various sealing members containing a reflective filler with a plurality of concentrations within this range can be prepared in advance. By taking advantage of the phenomenon where chromaticity shifts depending on the concentration of the reflective filler, a semiconductor light emitting device with less chromaticity variation can be produced utilizing a sealing member with a particular concentration in accordance with the chromaticity of a particular semiconductor light emitting element that is used and which may be varied during fabrication.06-10-2010
20100140649ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD OF MANUFACTURING THE SAME - An organic light emitting diode display includes a substrate member, a plurality of pixel electrodes formed on the substrate member, an organic emission layer formed on the pixel electrodes, and a first common electrode formed on the organic emission. A transmitting layer may be formed on the first common electrode and is configured to be substantially antireflective. A second common electrode may be formed on the transmitting layer and the first common electrode is electrically connected with the second common electrode.06-10-2010
20100140643LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - The light emitting device, and corresponding method of manufacture, the light emitting device including a second electrode layer; a second conductive type semiconductor layer formed on the second electrode layer; an active layer formed on the second conductive type semiconductor layer; a first conductive type semiconductor layer formed with a first photonic crystal that includes a mask layer and an air gap formed on the active layer; and a first electrode layer formed on the first conductive type semiconductor layer.06-10-2010
20090179216LIGHT EITTING DEVICE WITH MAGNETIC FIELD - A light emitting device with magnetic field includes a light emitting device, a thermal conductive material layer and a magnetic layer. The thermal conductive material layer is coupled with the light emitting device to dissipate heat generated by the light emitting device. The magnetic layer is coupled with thermal conductive material layer to produce a magnetic filed on the light emitting device.07-16-2009
20100051998Organic light emitting diode and method of fabricating the same - The present invention discloses an organic light emitting diode and a method of fabricating the organic light emitting diode. The OLED device includes one or more light emitting layers, and the light emitting layer is composed of one or more light emitting materials and one or more subject materials, and the subject material has a molecular polarity different from the molecular polarity of the light emitting material, such that the light emitting molecules can be self dispersed to emit a more reddish light color or a light color of a longer wavelength.03-04-2010
20090127574Semiconductor Structure and Method of Manufacturing a Semiconductor Structure - A semiconductor structure is formed of nitrides of group III metals having wurtzite crystal structure and grown in vapor phase on a (0001) oriented semiconductor substrate. The structure comprises a bottom cladding layer, a top cladding layer, and a diffusion region positioned between the cladding layers for diffusing light propagating within the semiconductor structure. The diffuse region has refractive index different from those of the cladding layers and non-flat surfaces for providing light diffusing interfaces between the diffusion region and the cladding layers. According to the invention, the diffusion region comprises a plurality of diffusion layers, compositions and thicknesses of said diffusion layers having been chosen to avoid formation of strain-induced dislocations in the diffusion region, and adjacent diffusion layers having different refractive indices in order to further enhance the diffusion efficiency.05-21-2009
20090127575Light-Emitting Diode Chip With High Light Extraction And Method For Manufacturing The Same - This invention provides a light-emitting diode chip with high light extraction, which includes a substrate, an epitaxial-layer structure for generating light by electric-optical effect, a transparent reflective layer sandwiched between the substrate and the epitaxial-layer structure, and a pair of electrodes for providing power supply to the epitaxial-layer structure. A bottom surface and top surface of the epitaxial-layer structure are roughened to have a roughness not less than 100 nm root mean square (rms). The light generated by the epitaxial-layer structure is hence effectively extracted out. A transparent reflective layer not more than 5 μm rms is formed as an interface between the substrate and the epitaxial-layer structure. The light toward the substrate is more effectively reflected upward. The light extraction and brightness are thus enhanced. Methods for manufacturing the light-emitting diode chip of the present invention are also provided.05-21-2009
20110266580LIGHT SOURCE COMPRISING A LIGHT RECYCLING DEVICE AND CORRESPONDING LIGHT RECYCLING DEVICE - The invention relates to a light source (11-03-2011
20110266572Organic Light Emitting Component and Illumination Means Comprising a Component of this Type - In at least one embodiment of the organic light-emitting component (11-03-2011
20100051997Organic light emitting diode and method of fabricating the same - The present invention discloses an organic light emitting diode and a method of fabricating the organic light emitting diode. The OLED device includes one or more light emitting layers, and the light emitting layer is composed of one or more light emitting materials and one or more subject materials, and the subject material has a molecular polarity different from the molecular polarity of the light emitting material, such that the light emitting molecules can be self dispersed to emit a darker blue light color or a light color of a longer wavelength.03-04-2010
20100051996LIGHT-EMITTING SEMICONDUCTOR DEVICE AND PACKAGE THEREOF - The present application discloses a light-emitting semiconductor device including a semiconductor light-emitting element, a transparent paste layer and a wavelength conversion structure. A first light emitted from the semiconductor light-emitting element enters the wavelength conversion structure to generate a second light which has a wavelength different from that of the first light. In addition, the present application also provides a light-emitting semiconductor device package.03-04-2010
20110220929WARM WHITE LEDS HAVING HIGH COLOR RENDERING INDEX VALUES AND RELATED LUMINOPHORIC MEDIUMS - Light emitting devices include a solid state lighting source and a recipient luminophoric medium for down-converting at least some of the radiation emitted by the solid state lighting source. The recipient luminophoric medium includes a first material that down-converts the radiation emitted by the solid state lighting source to radiation having a peak wavelength in the green color range that has a full width half maximum emission bandwidth that extends into the cyan color range, and at least one additional material that down-converts the radiation emitted by the solid state lighting source to radiation having a peak wavelength in another color range.09-15-2011
20110220931SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor light emitting device includes, a first semiconductor layer, a second semiconductor layer, a first electrode, a second electrode, a first interconnection, and a second interconnection. The first semiconductor layer has a first major surface, a second major surface provided on an opposite side to the first major surface, a protrusion selectively provided on the second major surface, and a trench formed from the second major surface to the first major surface. The second semiconductor layer is stacked on the protrusion of the first semiconductor layer and includes a light emitting layer. The first electrode is provided on the second major surface of the first semiconductor layer and a side surface of the trench. The second electrode is provided on a surface of the second semiconductor layer on an opposite side to the first semiconductor layer.09-15-2011
20090127576NANOCRYSTAL LIGHT-EMITTING DIODE - A nanocrystal light-emitting diode with improved structural stability is disclosed. Specifically, the nanocrystal light-emitting diode comprises an excitation source, a nanocrystal-containing light conversion layer and an air layer formed therebetween to be exposed to the outside.05-21-2009
20090127578LIGHT-EMITTING DIODE - A light-emitting diode (05-21-2009
20090127573OPTOELECTRONIC COMPONENT WITH A WIRELESS CONTACTING - An optoelectronic component contains a semiconductor chip (05-21-2009
20090026473InGaAlN LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - There is provided an InGaAlN light-emitting device and a manufacturing method thereof. The light emitting device includes a conductive substrate having a main surface and a back surface, a metal bonding layer formed on the main surface of the substrate, a light reflecting layer formed on the bonding layer, a semiconductor multilayer structure including at least a p-type and an n-type InGaAlN layer disposed on the reflecting layer, the p-type InGaAlN layer directly contacting the reflecting layer, and ohmic electrodes disposed on said n-type InGaAlN layer and on the back surface of the conductive substrate, respectively.01-29-2009
20100200887LIGHT EMITTING DEVICE - A light emitting device including a thinned color conversion layer which emits a light with a minimized color ununiformity. The light emitting element includes an LED chip, a color conversion layer. The color conversion layer is made of a light-transmissive material containing a phosphor. The phosphor is excited by a light emitted from the LED chip to emit a light of a color having a wavelength longer than that of a luminescent color of the LED chip. The LED chip is provided at its top surface with a frame-shaped electrode which extends along its edge. The color conversion layer is formed on the top surface of the LED chip at an area surrounded by the frame-shaped electrode.08-12-2010
20100200885LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A light emitting device and a method of fabricating thereof are provided. The method of fabricating the light emitting device comprises: providing a substrate having a first major surface and a second major surface; forming a plurality of light-emitting stacks on the first major surface; forming an etching protection layer on each of the light emitting stacks; forming a plurality of holes by a discontinuous laser beam on the substrate; etching the plurality of holes; and slicing off the substrate along the plurality of holes to form a light emitting device. The light emitting device has a substrate wherein the sidewall of the substrate comprising a first area with a substantially flat surface and a second area with substantially textured surface.08-12-2010
20100200884LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE - A light emitting device is provided. The light emitting device comprises: a conductive support substrate; a bonding layer on the conductive support substrate; a reflective layer on the bonding layer; and a light emitting structure layer on the reflective layer. The bonding layer comprises a solder bonding layer on the conductive support substrate and at least one of a diffusion barrier layer and an adhesion layer on the solder bonding layer, the solder bonding layer, the diffusion barrier layer, and the adhesion layer being formed of a metal or an alloy of which the Young's Modulus is 9 GPa to 200 GPa.08-12-2010
20100200883METHOD FOR PRODUCING ORGANIC ELECTROLUMINESCENCE ELEMENT AND ORGANIC ELECTROLUMINESCENCE ELEMENT - A method for producing an organic electroluminescence element, the method including subjecting an anode to a surface treatment using at least one non-oxidizing gas, and forming a p-doped hole-injection layer on a surface of the anode subjected to the surface treatment.08-12-2010
20100200882THERMOSETTING LIGHT-REFLECTING RESIN COMPOSITION, OPTICAL SEMICONDUCTOR ELEMENT MOUNTING BOARD PRODUCED THEREWITH, METHOD FOR MANUFACTURE THEREOF, AND OPTICAL SEMICONDUCTOR DEVICE - There is provided a thermosetting light-reflecting resin composition that has a high level of various characteristics required of optical semiconductor element mounting boards, such as optical properties and thermal discoloration resistance, provides high releasability during molding such as transfer molding, and allows molding processes to be performed continuously. There are also provided a highly-reliable optical semiconductor element mounting board and an optical semiconductor device each produced with the resin composition, and methods for efficient production thereof. A thermosetting light-reflecting resin composition is prepared and used, which includes (A) an epoxy resin, (B) a curing agent, (C) a curing catalyst, (D) an inorganic filler, (E) a white pigment, (F) an additive, and (G) a release agent as major components, wherein the resin composition, after curing, has a diffuse reflectance of 80% or more at a light wavelength of 400 nm; and the resin composition is possible to perform transfer molding 100 times or more continuously.08-12-2010
20100200880SEMICONDUCTOR WAFERS AND SEMICONDUCTOR DEVICES AND METHODS OF MAKING SEMICONDUCTOR WAFERS AND DEVICES - Semiconductor wafers, semiconductor devices, and methods of making semiconductor wafers and devices are provided. Embodiments of the present invention are especially suitable for use with substrate substitution applications, such in the case of fabricating vertical LED. One embodiment of the present invention includes a method of making a semiconductor device, the method comprising providing a substrate; forming a plurality of polishing stops on the substrate, each of the plurality of polishing stops including ceramic material; growing one or more buffer layers on the substrate; and growing one or more epitaxial layers on the one or more buffer layers. Additionally, the steps of applying one or more metal layers to the one or more epitaxial layers, affixing a second substrate to the one or more metal layers and removing the base substrate using a mechanical thinning process may be performed.08-12-2010
20100200879PHOTOELECTRIC SEMICONDUCTOR DEVICE - A photoelectric semiconductor device has a metal wiring layer packed or embedded into a housing for enhancing package stability and electric connectivity. The housing has a cavity structure, and at least one LED chip and an encapsulating material are configured inside the cavity structure. The metal wiring layer locates inside the housing, or in other words, between the top surface and the bottom surface of the housing, and extends to the bottom of the cavity structure to electrically connect the LED chip. With fully wrapping around, the metal wiring layer has higher stability and more reliability from being harmed by outside changes in humidity and temperature.08-12-2010
20100200878Light-Generating Arrangement - The invention relates to a light-generating arrangement comprising a light-emitting semiconductor element provided with electric supply lines and a transparent light-directing element (08-12-2010
20090039375SEMICONDUCTOR LIGHT EMITTING DEVICES WITH SEPARATED WAVELENGTH CONVERSION MATERIALS AND METHODS OF FORMING THE SAME - A semiconductor device includes a semiconductor light emitting device (LED) that emits light having a first peak wavelength upon the application of a voltage thereto, and first and second phosphor-containing regions on the LED that receive the light and convert at least a portion of the light to light having a longer wavelength. The first phosphor-containing region is between the second phosphor-containing region and the LED so that a light ray emitted by the LED passes through the first phosphor-containing region before passing through the second phosphor-containing region. The first phosphor-containing region is configured to convert light emitted by the LED to light having a second peak wavelength and the second phosphor-containing region is configured to convert light emitted by the LED to light having a third peak wavelength, shorter than the second peak wavelength.02-12-2009
20090050916SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR LIGHT EMITTING APPARATUS - A semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, a first electrode provided on the first semiconductor layer, a second electrode including a first metal film provided on the second semiconductor layer and containing at least one of silver and a silver alloy, and a second metal film provided on the first metal film and made of a metal substantially not containing silver, and a dielectric film spaced from the first metal film on the second semiconductor layer. The second metal film covers the first metal film, at least part of the dielectric film, and a surface of the second semiconductor layer exposed between the first metal film and the dielectric film.02-26-2009
20090140279Substrate-free light emitting diode chip - A light emitting diode (LED) chip has a multilayer semiconductor structure that is at least 10 microns thick and does not require an attached growth substrate or transfer substrate for structural rigidity or support. The multilayer semiconductor structure includes a first doped layer, a second doped layer and an active region interposed between the first doped layer and the second doped layer. Optionally, the multilayer semiconductor structure includes an undoped layer. At least one of the layers of the multilayer semiconductor structure is at least 5 microns thick and is preferably deposited by hydride vapor phase epitaxy.06-04-2009
20090184335OPTICAL SEMICONDUCTOR DEVICE - An optical semiconductor device includes: a package having a bottom portion and a sidewall portion; a semiconductor chip having an optical element formed on one surface thereof and having an opposite surface to the one surface fixed to the bottom portion of the package; a transparent member fixed to the semiconductor chip so as to cover the optical element; and a sealing resin filling a space between the package and the semiconductor chip. The sidewall portion has in an upper part thereof an overhang portion that projects toward inside of the package. The transparent member is exposed from a window portion formed by the overhang portion.07-23-2009
20080315228LOW PROFILE SIDE EMITTING LED WITH WINDOW LAYER AND PHOSPHOR LAYER - Low profile, side-emitting LEDs are described that generate white light, where all light is emitted within a relatively narrow angle generally parallel to the surface of the light-generating active layer. The LEDs enable the creation of very thin backlights for backlighting an LCD. In one embodiment, the LED emits blue light and is a flip chip with the n and p electrodes on the same side of the LED. Separately from the LED, a transparent wafer has deposited on it a red and green phosphor layer. The phosphor color temperature emission is tested, and the color temperatures vs. positions along the wafer are mapped. A reflector is formed over the transparent wafer. The transparent wafer is singulated, and the phosphor/window dice are matched with the blue LEDs to achieve a target white light color temperature. The phosphor/window is then affixed to the LED.12-25-2008
20090140281SEMICONDUCTOR LIGHT EMITTING DEVICE AND A METHOD OF MANUFACTURING THE SAME - Disclosed is a semiconductor light emitting device comprising a seed layer, a first conductive semiconductor layer into which the seed layer is partially inserted, a first electrode electrically connected to the first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, a second conductive semiconductor layer under the active layer, and a second electrode layer under the second conductive semiconductor layer.06-04-2009
20090140276OPTICAL FUNCTIONAL FILM AND METHOD OF MANUFACTURING THE SAME - A light emitting element includes a light emitting layer emitting light and a refractive index composite structure layer arranged in a light path of the light output from the light emitting layer. The refractive index composite structure layer includes a structure having characteristics (1) to (4) as follows: (1) an internal configuration includes two or more types of phases differing in refractive index; (2) at least one of the two or more types of phases includes a structural unit having a size greater than or equal to 1 nm and smaller than or equal to ¼ of a wavelength within a visible light wavelength range; (3) an average refractive index is higher than 1 and lower than a refractive index of a plurality of layers between a light emitter and the refractive index composite structure layer excepting a layer including a gas phase; and (4) the internal configuration in a thickness direction includes a plurality of interfaces between the two or more types of phases in a near-field region into which light as energy can enter from an interface between the optical functional film and another layer adjacent to the refractive index composite structure layer.06-04-2009
20090140275NANOPARTICLE COUPLED TO WAVEGUIDE - A nanoparticle is able to emit single photons. A waveguide is coupled to the nanoparticle and able to receive the single photons. A backreflector is optically coupled to the waveguide and configured to reflect the single photons toward the waveguide.06-04-2009
20090014740LIGHT EMITTING DEVICES AND RELATED METHODS - Devices, such as light-emitting devices (e.g., LEDs), and methods associated with such devices are provided. A light-emitting device may include an interface through which emitted light passes therethrough. The interface having a dielectric function that varies spatially according to a pattern, wherein the pattern is arranged to provide light emission that has a substantially isotropic emission pattern and is more collimated than a Lambertian distribution of light.01-15-2009
20120138992METHOD FOR PREPARING PHOSPHOR AND LIGHT EMITTING DEVICE - A method for preparing a phosphor includes: dissolving at least one metal as a raw material of a desired phosphor in liquid ammonia to form a metal-amide type precursor; gathering the metal-amide type precursor; and firing the precursor to form a desired phosphor.06-07-2012
20120138987OPTICAL PLATFORM TO ENABLE EFFICIENT LED EMISSION - An integrated multi-layer apparatus and method of producing the same is disclosed. The apparatus comprises an LED, a beam shaping layer, and a refracting layer between the beam shaping layer from the LED. The refracting layer may have an index of refraction lower than the index of refraction of the LED and the beam shaping layer.06-07-2012
20120138985SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer and a light emitting part. The first semiconductor layer includes an n-type semiconductor layer. The second semiconductor layer includes a p-type semiconductor layer. The light emitting part is provided between the first semiconductor layer and the second semiconductor layer, and includes a plurality of barrier layers and a well layer provided between the plurality of barrier layers. The first semiconductor layer has a first irregularity and a second irregularity. The first irregularity is provided on a first major surface of the first semiconductor layer on an opposite side to the light emitting part. The second irregularity is provided on a bottom face and a top face of the first irregularity, and has a level difference smaller than a level difference between the bottom face and the top face.06-07-2012
20090014739 LIGHT-EMITTING DIODE PACKAGE STRUCTURE - The present invention is an improved Light-Emitting Diode (LED) package structure comprising a light-emitting diode chip, a package board of heat conductive semiconductor material, a lead frame, and a circuit. Whereon the package board installs plural thermal vias to conduct the electricity circuit and transmit the heat out of the package due to the LED luminescing as well.01-15-2009
20090014743METHOD OF MAKING A LIGHT-EMITTING DIODE - Methods are disclosed for forming a vertical semiconductor light-emitting diode (VLED) device having an active layer between an n-doped layer and a p-doped layer; and securing a plurality of balls on a surface of the n-doped layer of the VLED device.01-15-2009
20120068217LIGHT EMITTING DEVICE - A light emitting device includes an active layer; at least a portion of the active layer constitutes a gain region. The gain region is continuous from a first end surface and a second end surface. The gain region includes a first portion extending from the first end surface to a first reflective surface in a direction tilted with respect to a normal to the first side surface as viewed two-dimensionally; a second portion extending from the second end surface to the second reflective surface in a direction tilted with respect to a normal to the first side surface as viewed two-dimensionally; and a third portion extending from the first reflective surface to the second reflective surface in a direction tilted with respect to a normal to the first reflective surface as viewed two-dimensionally.03-22-2012
20120068216PHOTOELECTRIC DEVICE, METHOD OF FABRICATING THE SAME AND PACKAGING APPARATUS FOR THE SAME - A photoelectric device includes a ceramic substrate defining a cavity in a top thereof and having two electrode layers beside the cavity. A photoelectric die is received in the cavity. A first packing layer is received in the cavity and encapsulates the photoelectric die. The photoelectric die is electrically connected with the electrode layers via two wires. A reflective cup is mounted on the ceramic substrate and defines a receiving space above the top of the ceramic substrate and the first packing layer. A second packing layer is received in the receiving space and covers the first packing layer.03-22-2012
20120068214OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME - An optoelectronic device is provided that includes a substrate having a surface and a normal direction perpendicular to the surface, a first semiconductor layer formed on the surface, and at least one hollow component formed between the first semiconductor layer and the surface. A method of fabricating an optoelectronic device is also provided that includes providing a substrate having a surface and a normal direction perpendicular to the surface, forming a first semiconductor layer on the surface, patterning the first semiconductor layer, forming a second semiconductor layer on the substrate and cover the patterned first semiconductor layer, and forming at least one hollow component formed between the first semiconductor layer and the surface. A height of the hollow component varies along with a first direction perpendicular to the normal direction and/or a width of the hollow component varies along with a second direction parallel with the normal direction.03-22-2012
20120068211LED PACKAGE STRUCTURE - An LED (light-emitting diode) package structure includes a substrate, at least one LED unit disposed on the substrate for generating a light beam, and an optical correcting element disposed within a travelling path of the light beam. The optical correcting element includes a transparent body disposed on and cooperating with the substrate to define a reception chamber with an opening for access into the reception chamber and a transparent encapsulated body injected into the reception chamber via the opening for encapsulating the LED unit therewithin.03-22-2012
20120068210LIGHT EMITTING COMPONENT AND MANUFACTURING METHOD THEREOF - A light emitting component, and more particularly to a white light emitting component with high light emitting efficiency are provided. The white light emitting component with high light emitting efficiency has properties of high driving voltage, high color render index and concentrated optical density. The light emitting component includes a plurality of different light emitting diode chip groups for emitting a number of lights in different wavelength ranges and a wavelength conversion fluorescent material. A manufacturing method by stacking miniature light emitting diode chip groups to form the white light emitting component is also provided.03-22-2012
20090014744Semiconductor light-emitting device and method - The present invention discloses a semiconductor light-emitting device including a semiconductor light-emitting element, a first attaching layer and a wavelength conversion structure. The primary light emitted from the semiconductor light-emitting element enters the wavelength conversion structure to generate a converted light, whose wavelength is different form that of the primary light. In addition, the present invention also provides the method for forming the same.01-15-2009
20090321772LIGHT SOURCE - A light source that restricts the heat accumulation in the phosphor. The light source includes: a substrate 12-31-2009
20090321773LED PACKAGE FRAME AND LED PACKAGE HAVING THE SAME - An LED package frame includes an LED chip and a heat conductive member made of high heat conductivity material. The heat conductive member has a receiving part at a lateral portion, and is mounted with the LED chip. A lead-coating assembly configured to be inserted into the receiving part of the heat conductive member, including a lead is inserted at one end into the receiving part of the heat conductive member, and electrically connected to the LED chip. An electrically insulating layer is placed in tight contact between the lead and the receiving part of the heat conductive member isolates the lead from the receiving part. With the lead inserted into the heat conductive member, it is possible to reduce size while maintaining high heat conductivity and stability.12-31-2009
20090321771SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device includes a semiconductor light-emitting element emitting light in a region ranging from ultraviolet to visible, and a visible-light luminescent element absorbing light emitted from the semiconductor light-emitting element and outputting visible light. The visible-light luminescent element includes a substrate, a light-reflecting layer formed on the substrate and containing light scattering particles, and a luminescent layer containing phosphor particles. The luminescent layer absorbs light emitted from the semiconductor light-emitting element and output visible light. The luminescent layer further absorbs light that is emitted from the semiconductor light-emitting element, arrives at and is reflected from the light scattering particles, and output the visible light.12-31-2009
20090321768LED - An LED includes a base having a depression, a chip disposed in the depression and an encapsulation received in the depression for encapsulating the chip and a heat sink. The heat sink includes a plurality of fins formed on a top of the base and a heat-conductive material filled in the space between adjacent fins. The heat-conductive material has a plurality of pores therein.12-31-2009
20090321767ASPHERICAL LED ANGULAR LENS FOR WIDE DISTRIBUTION PATTERNS AND LED ASSEMBLY USING THE SAME - The present invention discloses an aspherical LED angular optical lens for wide distribution patterns and an LED assembly using the same. The optical lens comprises a concave surface on a source side and a convex surface on a project side. The LED assembly comprising the optical lens can accumulate light emitted from the LED die and generate a peak intensity of the wide angular circle distribution pattern which is greater than 120° and smaller than 180°. The present invention only uses a single optical lens capable of accumulating light and forming a required distribution pattern to satisfy the requirement of a luminous flux ratio greater than 85% and the requirement of an illumination, a flash light of a cell phone or a flash light of a camera.12-31-2009
20090321766LED - An LED includes a base having a depression, a chip disposed in the depression, an encapsulation received in the depression for encapsulating the chip, and a base. Two spaced electrodes are attached to a bottom of the base and electrically connect with the chips. A porous heat sink extends through the base and reaches the depression, contacting the chip.12-31-2009
20090321761COATING FOR CONVERTING OPTICAL SPECTRUM AND LED CHIP PACKAGE MODULE USING THE SAME - A coating for converting optical spectrum includes: a transparent colloid layer and an emitter material unit. The emitter material unit is used to convert one part of a short-wavelength band of a light source into a long-wavelength band. The emitter material unit has at least one first emitter body and at least one second emitter body both mixed with the transparent colloid layer, the at least one first emitter body is an inorganic silicate compound, and the at least one second emitter body is aan organic dye. Hence, the color rendering index (CRI) and the range of color temperature of white light generated by an LED chip package module using the coating are increased according to the function of the emitter material unit for converting one part of a short-wavelength band of a light source into a long-wavelength band.12-31-2009
20090321759SURFACE-TEXTURED ENCAPSULATIONS FOR USE WITH LIGHT EMITTING DIODES - Surface-textured encapsulations for use with light emitting diodes. In an aspect, a light emitting diode apparatus is provided that includes a light emitting diode, and an encapsulation formed upon the light emitting diode and having a surface texture configured to extract light. In an aspect, a method includes encapsulating a light emitting diode with an encapsulation having a surface texture configured to extract light. In an aspect, a light emitting diode lamp is provided that includes a package, at least one light emitting diode disposed within the package, and an encapsulation formed upon the at least one light emitting diode having a surface texture configured to extract light. In another aspect, a method includes determining one or more regions of an encapsulation, the encapsulation configured to cover a light emitting diode, and surface-texturing each region of the encapsulation with one or more geometric features that are configured to extract light.12-31-2009
20090321757Dislocation-based light emitter - A light-emitting semiconductor component comprising a substrate which has a first interface between a first and a second silicon layer, whose lattice structures which are considered as ideal are rotated relative to each other through a twist angle about a first axis perpendicular to the substrate surface and are tilted through a tilt angle about a second axis parallel to the substrate surface, in such a way that a dislocation network is present in the region of the interface, wherein the twist angle and the tilt angle are so selected that an electroluminescence spectrum of the semiconductor component has an absolute maximum of the emitted light intensity at either 1.3 micrometers light wavelength or 1.55 micrometers light wavelength.12-31-2009
20110220952LIGHT EMITTING DEVICE PACKAGE AND LIGHT UNIT HAVING THE SAME - Discussed is a semiconductor LED package. The semiconductor LED package includes a packet body having a cavity, a semiconductor light emitting device in the cavity of the package body; and a plurality of reflective frames, each of the reflective frames having a bottom frame in the cavity of the package body, and at least two sidewall frames extending from the bottom frame and inclined with respect to the bottom frame, wherein the plurality of reflective frames are electrically separated from each other.09-15-2011
20110220937LIGHT EMITTING DEVICE AND LIGTH EMITTING DEVICE PAKAGE - Provided are a light emitting device and a light emitting device package. The light emitting device includes a first electrode, a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer on the first electrode, a second electrode on the light emitting structure, and a reflective member on at least lateral surface of the second electrode.09-15-2011
20110220934SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device has a support substrate, a light emitting element, and underfill material. The light emitting element includes a nitride-based group III-V compound semiconductor layer contacted via a bump on the support substrate. The underfill material is disposed between the support substrate and the light emitting element, the underfill material comprising a rib portion disposed outside of an end face of the light emitting element to surround the end surface of the light emitting element.09-15-2011
20110220933SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device has a light emitting element, and first and second electrodes. The light emitting element has a nitride-based III-V compound semiconductor on a substrate. The first and second electrodes are disposed on both sides of the light emitting element, respectively. The light emitting element has a light emitting layer, a first conductive type semiconductor layer, and a second conductive type semiconductor layer. The first conductive type semiconductor layer is disposed between the light emitting layer and the first electrode. The second conductive type semiconductor layer is disposed between the light emitting layer and the second electrode. One surface of the first conductive type semiconductor layer contacts the first electrode and is a light extraction surface which is roughly processed so as to have two or more kinds of oblique angles.09-15-2011
20110140158SEMICONDUCTOR LIGHT EMITTING DEVICE - Disclosed is a semiconductor light emitting device. An embodiment of the semiconductor light emitting device includes a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, a second conductive semiconductor layer under the active layer, a second electrode layer under the second conductive semiconductor layer, and a transmissive conductive layer at least one part between the second conductive semiconductor layer and the second electrode layer.06-16-2011
20110140154LIGHT-EMITTING DEVICE - Provided is a light-emitting device provided with a light reflection layer which has a high light reflectivity and which is less susceptible to deterioration of the reflectivity due to corrosion, and having an improved light extraction efficiency.06-16-2011
20110140150System and Method for LED Packaging - System and method for LED packaging. The present invention is directed to optical devices. More specifically, embodiments of the presentation provide LED packaging having one or more reflector surfaces. In certain embodiments, the present invention provides LED packages that include thermal pad structures for dissipating heat generated by LED devices. In particular, thermal pad structures with large surface areas are used to allow heat to transfer. In certain embodiments, thick thermally conductive material is used to improve overall thermal conductivity of an LED package, thereby allowing heat generated by LED devices to dissipate quickly. Depending on the application, thermal pad structure, thick thermal conductive layer, and reflective surface may be individually adapted in LED packages or used in combinations. There are other embodiments as well.06-16-2011
20110140146LED UNIT - An LED unit includes an LED and a lens mounted on the LED. The lens includes a light-incident face adjacent to the LED, a light-emergent face remote from the LED, and a light-reflecting face between the light-incident face and the light-emergent face. The light-incident face includes a first light-incident face faces the LED, and the light-emergent face having includes a first light-emergent face located opposite to the first light-incident face. The first light-emergent face is a continuously curved face which has a curvature, along a top-to-bottom direction of the lens, firstly increasing gradually, then decreasing gradually and then increasing gradually again.06-16-2011
20090039373Group III nitride-based compound semiconductor light emitting device - A group III nitride-based compound semiconductor light emitting device includes a polarity inversion layer including a surface with a convex portion, and a transparent electrode formed on the polarity inversion layer. The polarity inversion layer may have a magnesium concentration of not less than 1×1002-12-2009
20090050919LIGHT EMITTING DIODE MODULE - The present invention relates to a light emitting diode (LED) module (02-26-2009
20110220942LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE - Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, an adhesive layer contacting a top surface of the first conductive semiconductor layer, a first electrode contacting a top surface of the first conductive semiconductor and a top surface of the adhesive layer, and a second electrode contacting the second conductive semiconductor layer, wherein the adhesive layer contacting the first electrode is spaced apart from the second electrode.09-15-2011
20110220938SUBSTRATE FOR FABRICATING LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE LIGHT EMITTING DEVICE - Provided is a substrate for fabricating a light emitting device and a method for fabricating the light emitting device. The method for fabricating the light emitting device may include forming a sacrificial layer having band gap energy less than energy of a laser irradiated on a substrate, forming a growth layer on the sacrificial layer, forming a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer on the growth layer, and irradiating the laser onto the sacrificial layer to pass through the substrate, thereby to lift-off the substrate.09-15-2011
20110220935SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device has a light emitting element, a first electrode layer, a second electrode layer, a seed electrode layer and a plated layer. The light emitting element has a nitride-based III-V compound semiconductor on a substrate. The light emitting element having a light extraction surface. The first electrode layer on the light extraction surface. The second electrode layer is provided on a surface opposite to the light extraction surface of the light emitting element. The seed electrode layer is configured to cover the entire surface of the second electrode layer. The plated layer is provided on the seed electrode layer. The light emitting element has a light emitting layer, a first conductive type semiconductor layer, and a second conductive type semiconductor layer. The light emitting element has a forward tapered shape of a width which gradually narrows in order of the second conductive type semiconductor layer, the light emitting layer and the first conductive type semiconductor layer.09-15-2011
20110220930Light-Emitting Devices with Textured Active Layer - A device includes a textured substrate having a trench extending from a top surface of the textured substrate into the textured substrate, wherein the trench comprises a sidewall and a bottom. A light-emitting device (LED) includes an active layer over the textured substrate. The active layer has a first portion parallel to the sidewall of the trench and a second portion parallel to the bottom of the trench.09-15-2011
20090050917Semiconductor light emitting device - A semiconductor light emitting device includes a substrate, and a light emitting portion that is disposed on the substrate, and includes an active layer formed of a group III nitride semiconductor using a nonpolar plane or a semipolar plane as a growth principal surface, in which side end surfaces of the active layer are specular surfaces.02-26-2009
20100276714CONVERSION LED - A conversion LED is provided. The conversion LED may include a primary light source which emits in the short-wave radiation range below 420 nm, and a luminophore placed in front of it consisting of the BAM system as a host lattice for at least partial conversion of the light source's radiation into longer-wave radiation, wherein the BAM luminophore is applied as a thin layer having a thickness of at most 50 μm directly on the surface of the light source, the BAM luminophore having the general stoichiometry (M1−r Mgr)O*k(Al2O3), where r=0.4 to 0.6 and M=EAeEu1−e, with EA=Ba, Sr, Ca, and e=0.52 to 0.8, and k=1.5 to 4.5.11-04-2010
20100276711Light Emitting Diode Arrangement for High Safety Requirements - In a light emitting diode arrangement for lighting purposes, comprising a circuit board with at least one light generating semiconductor element disposed on the circuit board and conductors extending on the circuit board to the semiconductor element and being electrically connected to terminals of the semiconductor element, a light transmissive element is disposed on the circuit board and covers the semiconductor element and a flame resistant cover element is disposed below the light transmissive element and on top of the terminals to cover the terminals to provide for electrical and flame insulation thereof.11-04-2010
20110220932SEMICONDUCTOR LIGHT-EMITTING DEVICE - According to one embodiment, a semiconductor light-emitting device includes a first semiconductor layer, a second semiconductor layer, a light-emitting layer, a third semiconductor layer and a first electrode. The first semiconductor layer of a first conductivity type has a first major surface provided with a first surface asperity. The second semiconductor layer of a second conductivity type is provided on an opposite side of the first semiconductor layer from the first major surface. The light-emitting layer is provided between the first and second semiconductor layers. The first semiconductor layer is disposed between a third semiconductor layer and the light-emitting layer. The third semiconductor layer has an impurity concentration lower than an impurity concentration of the first semiconductor layer, and includes an opening exposing the first surface asperity. The first electrode is in contact with the first surface asperity through the opening, and reflective to emission light emitted from the light-emitting layer.09-15-2011
20110220950LIGHT EMITTING DEVICE PACKAGE - A light emitting device package is provided. The light emitting device package comprises a package body comprising a first cavity, and a second cavity connected to the first cavity; a first lead electrode, at least a portion of which is disposed within the second cavity; a second lead electrode, at least a portion of which is disposed within the first cavity; a light emitting device disposed within the second cavity; a first wire disposed within the second cavity, the first wire electrically connecting the light emitting device to the first lead electrode; and a second wire electrically connecting the light emitting device to the second lead electrode.09-15-2011
20110220939LIGHT-EMITTING DEVICE - To provide a light-emitting device mounting a light-emitting element having a metal film on the rear side surface, which is excellent in light extraction efficiency since it has high heat dissipating properties and high light reflection efficiency, and which can suppress the reduction of light extraction efficiency due to the deterioration with time.09-15-2011
20110220953LED ASSEMBLY - A light emission diode (LED) assembly, comprising a LED die (09-15-2011
20110220943Quantum Dot LED Device And Method - An improved solid-state light source (09-15-2011
20110220951LIGHT EMITTING DEVICE PACKAGE - A light emitting device package is provided. The light emitting device package comprises a package body comprising a first cavity, and a second cavity connected to the first cavity; a first lead electrode, at least a portion of which is disposed within the second cavity; a second lead electrode, at least a portion of which is disposed within the first cavity; a light emitting device disposed within the second cavity; a first wire disposed within the second cavity, the first wire electrically connecting the light emitting device to the first lead electrode; and a second wire electrically connecting the light emitting device to the second lead electrode.09-15-2011
20110220946LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM - Provided is a light emitting device. The light emitting device includes a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, a second conductive type semiconductor layer on the active layer, an undoped semiconductor layer disposed on the second conductive type semiconductor layer and comprising a plurality of first holes, and a third conductive type semiconductor layer disposed on the undoped semiconductor layer and comprising a plurality of second holes.09-15-2011
20090085049Phosphor down converting element for an LED package and fabrication method - There is provided a phosphor down converting element based on fluoropolymer resin and a method for fabricating the same. There is further provided a method for using said phosphor down converting element to generate white light from a radiation source. The method for fabricating phosphor down converting element includes preparing an appropriate phosphor powder mixture that is capable of absorbing a first band of wavelengths and emitting a second band of wavelengths being greater in length than the first bands, incorporating the phosphor powder mixture into or on a phosphor carrier element comprising a fluoropolymer material, and molding the phosphor down converting elements into useful shapes. Fluoropolymers are the most chemically inert of all plastics, can withstand both extremely high and low temperatures, and show a resistance to weavering and UV degradation, making fluoropolymers optimal for use as a phosphor carrier.04-02-2009
20090085051Light emitting diode device - A light emitting diode device includes a light emitting diode chip, a thermal conducting part, two electric conducting parts and two first conducting wires. The light emitting diode chip has a surface and two electrodes disposed on the surface. The thermal conducting part is electrically insulated to the electrodes. The thermal conducting part includes a core bearing the light emitting diode chip, and four outward lead-frames connected to the core. The electric conducting parts are electrically insulated to the thermal conducting part. The first conducting wires have ends electrically connected to the electrodes.04-02-2009
20110140147LED UNIT - An LED unit includes an LED and a lens mounted on the LED. The lens includes a light-incident face adjacent to the LED, a light-emergent face remote from the LED, and a light-reflecting face between the light-incident face and the light-emergent face. The light-incident face includes a first light-incident face facing the LED, and the light-emergent face includes a first light-emergent face located opposite to the first light-incident face. The first light-incident face is a continuously curved face which has a curvature, along a bottom-to-top direction of the lens, firstly decreasing gradually to a first value; then increasing gradually to a second value; then decreasing gradually again to a third value; and then increasing gradually again. The light-emergent face has a first light-emergent face located above the first light-incident face and having a varied curvature.06-16-2011
20110140144PACKAGE SUBSTRATE FOR OPTICAL ELEMENT AND METHOD OF MANUFACTURING THE SAME - Disclosed is a package substrate for an optical element, which includes a base substrate, a first circuit layer formed on the base substrate and including a mounting portion, an optical element mounted on the mounting portion, one or more trenches formed into a predetermined pattern around the mounting portion by removing portions of the first circuit layer so that the first circuit layer and the optical element are electrically connected to each other, and a fluorescent resin material applied on an area defined by the trenches so as to cover the optical element, and in which such trenches are formed on the first circuit layer so that the optical element and the first circuit layer are electrically connected to each other, thus maintaining the shape of the fluorescent resin material and obviating the need to form a via under the optical element. A method of manufacturing the package substrate for an optical element is also provided.06-16-2011
20110140142LIGHT EMITTING DEVICE PACKAGE - A light emitting device package according to embodiments comprises: a package body; a lead frame on the package body; a light emitting device supported by the package body and electrically connected with the lead frame; a filling material surrounding the light emitting device; and a phosphor layer comprising phosphors on the filling material.06-16-2011
20110140152LIGHT EMITTING DEVICE AND A FABRICATION METHOD THEREOF - A light emitting device according to the embodiment includes a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; a second conductive semiconductor layer on the active layer; a first passivation layer surrounding the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer; a second connection layer electrically connected to the second conductive semiconductor layer through the first passivation layer; a first light extracting structure layer on the first passivation layer and the second connection layer; a first electrode layer electrically connected to the first conductive semiconductor layer; and a second electrode layer on the first light extracting structure layer.06-16-2011
20090101930Light emitting device with phosphor wavelength conversion - A light emitting device comprises an excitation source (04-23-2009
20090101928LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME - Provided are a light emitting diode and a method of fabricating the same. In an inorganic light emitting diode, at least one layer selected from a group consisting of an oxide layer, a nitride layer, and a metal layer is formed on an upper doping layer which is in contact with a transparent electrode, and the plasma treatment is performed on the resultant structure to form a plasma etching layer, thereby enhancing adhesion between the upper doping layer and the transparent electrode. In an organic light emitting diode, at least one layer selected from a group consisting of an oxide layer, a nitride layer, and a metal layer is formed on a plastic substrate which is in contact with a transparent electrode, and the plasma treatment is performed on the resultant structure to form a plasma etching layer, thereby enhancing adhesion between the substrate and the transparent electrode. As a result, the adhesion between the substrate and the transparent electrode or between the upper doping layer and the transparent electrode is enhanced and the layer separation from the transparent electrode is prevented, thereby improving efficiency of the light emitting diode and increasing the production yield.04-23-2009
20110227110LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM - Disclosed are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; a substrate over the light emitting structure; a first reflective layer having a plurality of dielectric layers including a first dielectric layer having a first refractive index over the substrate, and a second dielectric layer having a second refractive index different from the first refractive index over the first dielectric layer; and a second reflective layer over the first reflective layer, the second reflective layer having a refractive index lower than the refractive index of each dielectric layer of the first reflective layer.09-22-2011
20120104448LIGHT-EMITTING DEVICE - A semiconductor light-emitting device that is high in luminous efficiency and that emits light which is high in color rendering property includes a semiconductor light-emitting element that emits blue light; a green fluorescent substance that absorbs the blue light and emits green light; and an orange fluorescent substance that absorbs the blue light and emits orange light, fluorescence emitted by the green fluorescent substance and the orange fluorescent substance having an emission spectrum that has a peak wavelength of not less than 540 nm and not more than 565 nm and that satisfies the relation of 0.70>PI(90)/PI(MAX)>0.55, where PI(MAX) represents an emission intensity at the peak wavelength, and PI(90) represents an emission intensity at a wavelength 90 nm longer than the peak wavelength.05-03-2012
20120104447LIGHT EMITTING DEVICE PACKAGE - Disclosed is a light emitting device package. The light emitting device package includes a substrate comprising a recess, a light emitting chip on the substrate and a first conductive layer electrically connected to the light emitting chip. And the first conductive layer includes at least one metal layer electrically connected to the light emitting chip on an outer circumference of the substrate.05-03-2012
20120104446METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE - A method for manufacturing a light emitting device, includes: forming a first multilayer body including a first substrate, a first semiconductor layer provided on the first substrate and having a light emitting layer, and a first metal layer provided on the first semiconductor layer; forming a second multilayer body including a second substrate having a thermal expansion coefficient different from a thermal expansion coefficient of the first substrate, and a second metal layer provided on the second substrate; a first bonding step configured to heat the first metal layer and the second metal layer being in contact with each other; removing the first substrate after the first bonding step; and a second bonding step configured to perform, after the removing, heating at a temperature higher than a temperature of the first bonding step.05-03-2012
20120104445CHIP PACKAGE AND METHOD FOR FORMING THE SAME - An embodiment of the invention provides a chip package which includes: a substrate having a surface; a first conducting layer located on the surface; a second conducting layer located on the surface, wherein the first conducting layer and the second conducting layer are electrically insulated from each other; a first reflective layer conformally located on the first conducting layer and at least partially covering a side of the first conducting layer; a second reflective layer conformally located on the second conducting layer and at least partially covering a side of the second conducting layer; and a chip disposed on the surface of the substrate and having at least a first electrode and a second electrode, wherein the first electrode is electrically connected to the first conducting layer, and the second electrode is electrically connected to the second conducting layer.05-03-2012
20120104444SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes: first and second conductive type semiconductor layers; an active layer disposed between the first and second conductive type semiconductor layers; and first and second electrodes disposed on one surface of each of the first and second conductive type semiconductor layers, respectively, wherein at least one of the first and second electrodes includes a pad part and a finger part formed to extend from the pad part, and the end of the finger part has an annular shape. Because a phenomenon in which current is concentrated in a partial area of the finger part is minimized, tolerance to electrostatic discharge (ESD) can be strengthened and light extraction efficiency can be improved.05-03-2012
20120104443IIIOxNy ON SINGLE CRYSTAL SOI SUBSTRATE AND III n GROWTH PLATFORM - A silicon-on-insulator (SOI) substrate structure and method of fabrication including a single crystal silicon substrate, a layer of single crystal rare earth oxide formed on the substrate, a layer of engineered single crystal silicon formed on the layer of single crystal rare earth oxide, and a single crystal insulator layer of IIIO05-03-2012
20120104441METHOD OF MANUFACTURING COLOR FILTER SUBSTRATE, SEMI-TRANSMISSIVE LIQUID CRYSTAL DISPLAY USING THE SAME, AND MANUFACTURING METHOD THEREOF - A manufacturing method of a color filter substrate, a semi-transmissive LCD using the same, and a manufacturing method thereof are disclosed. In one embodiment, the manufacturing method of the color filter substrate includes preparing a first substrate which comprises a reflection region and a transmission region. Then, a color resist on the first substrate is formed. A mask, including a semi-transmission mask corresponding to the reflection region, is provided on the color resist. An exposure process is provided for the color resist with the mask to form a color filter layer on the first substrate. The color filter layer is formed by removing a portion of the color resist of the reflection region.05-03-2012
20120104440OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME - An optoelectronic device comprising, a substrate and a first transition stack formed on the substrate comprising a first transition layer formed on the substrate having a hollow component formed inside the first transition layer, a second transition layer formed on the first transition layer, and a reflector rod formed inside the second transition layer.05-03-2012
20120104439SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes: a light emission structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and a wavelength conversion layer formed on at least a portion of a light emission surface of the light emission structure, made of a light-transmissive material including phosphor particles, and having a void therein. A semiconductor light emitting device includes: a light emission structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and a wavelength conversion layer formed on at least a portion of a light emission surface of the light emission structure, made of a light-transmissive material including phosphor particles or quantum dots, and having a void therein.05-03-2012
20120104438LIGHT EMITTING DIODE PACKAGE STRUCTURE - An LED package structure includes a substrate, a first electrical portion and a second electrical portion formed on the substrate, and an LED chip mounted on a first surface of the first electrical portion. The first and second electrical portions are electrically insulated from each other. The LED chip includes a first electrode connected with the first electrical portion and a second electrode connected with the second electrical portion through a connecting wire. The LED chip has a top surface for supporting the second electrode. The connecting wire has a highest point. A distance between the highest point and the top surface is less than a half of a distance between the first surface of the first electrical portion and the top surface of the LED chip.05-03-2012
20120104437OPTIC ASSEMBLY UTILIZING QUANTUM DOTS - An optic assembly is provided. The assembly includes a housing having an upstream end and a downstream end. An LED is positioned in the upstream end of the housing. The LED is configured to generate excitation light therefrom. The excitation light has a first wavelength. An optic is positioned in the downstream end of the housing. The optic is positioned remotely from the LED so that a cavity is formed between the LED and the optic. The excitation light generated from the LED passes downstream through the cavity to the optic. Quantum dots are positioned on the optic. The excitation light excites the quantum dots so that the quantum dots produce emitted light having a second wavelength that is different than the first wavelength of the excitation light.05-03-2012
20120104436LIGHT EMITTING PACKAGE WITH A MECHANICAL LATCH - A surface mount light emitting device package with mechanical latching means for locking a lens on to the package is provided. The surface mount light emitting package may include an encapsulation layer or a lens, a lead frame, at least one lead, a body, a die, and a layer of transparent gel encapsulant material. The lead frame may include at least one protrusion which is bent upward to from at least one latch for engaging the lens.05-03-2012
20120104434LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Provided are a light emitting device and a method for manufacturing the same. The light emitting device comprises a first conductive type semiconductor layer, an active layer, a second conductive type semiconductor layer, and a light extraction layer. The active layer is formed on the first conductive type semiconductor layer. The second conductive type semiconductor layer is formed on the active layer. The light extraction layer is formed on the second conductive type semiconductor layer. The light extraction layer has a refractive index smaller than or equal to a refractive index of the second conductive type semiconductor layer.05-03-2012
20110140155ELECTROOPTICAL DEVICE AND ELECTRONIC APPARATUS - An electrooptical device includes a substrate, a pixel electrode which is provided on the substrate, a semiconductor element which is provided so as to correspond to the pixel electrode, and a light reflection portion formed with a groove formed on at least a part of the substrate. In the electrooptical device, the semiconductor element is arranged so as to overlap with the light reflection portion in plan view and is arranged on a flattened film provided so as to cover at least an opening of the groove.06-16-2011
20110140156ORGANIC LIGHT EMITTING DIODE DISPLAY - An organic light emitting diode display is disclosed. The display includes a first electrode, an organic emissive layer placed on the first electrode, and a second electrode having a first layer placed on the organic emissive layer and a second layer disposed between the first layer and the organic emissive layer. The second layer is higher in transmittance than the first layer.06-16-2011
20090212310SOFT LITHOGRAPHIC MOLDING OF SURFACE RELIEF OUTPUT COUPLERS FOR ORGANIC LIGHT EMITTING DIODES - The present invention provides a method and apparatus for surface relief output coupling in organic light emitting diodes is provided. The method includes forming a pattern in a surface of an elastomer (08-27-2009
20090212306DEVICE FOR AN OPTOELECTRONIC COMPONENT AND MODULE WITH AN OPTOELECTRONIC COMPONENT AND A DEVICE - An apparatus having at least one fixing element is specified, the fixing dement being provided for fixing the apparatus to a housing body of an optoelectronic device and the apparatus being designed as a mount for a separate optical element.08-27-2009
20110140145LED UNIT - An LED unit includes an LED and a lens mounted on the LED. The lens includes a light-incident face adjacent to the LED, a light-emergent face remote from the LED, and a light-reflecting face between the light-incident face and the light-emergent face. The light-incident face includes a first light-incident face which faces the LED, and the light-emergent face includes a first light-emergent face located opposite to the first light-incident face. The first light-emergent face is a continuously curved face which has a curvature firstly increasing gradually and then decreasing gradually along a bottom-to-top direction of the lens.06-16-2011
20090212314YELLOW EMITTING PHOSPHORS BASED ON Ce3+-DOPED ALUMINATE AND VIA SOLID SOLUTION FOR SOLID-STATE LIGHTING APPLICATIONS08-27-2009
20090200569OPTOELECTRONIC SUBSTRATE AND METHODS OF MAKING SAME - A method of producing an optoelectronic substrate by detaching a thin layer from a semi-conducting nitride substrate and transferring it to an auxiliary substrate to provide at least one semi-conducting nitride layer thereon, metallizing at least a portion of the surface of the auxiliary substrate that includes the transferred nitride layer, bonding to a final substrate the metallized surface portion of the transferred nitrate layer of the auxiliary substrate, and removing the auxiliary substrate to provide an optoelectronic substrate comprising a semi-conducting nitride surface layer over a subjacent metallized portion and a supporting final substrate. Resultant optoelectronic substrates having low dislocation densities are also included.08-13-2009
20090200566SIDE-VIEW LIGHT EMITTING DIODE PACKAGE HAVING A REFLECTOR - Disclosed herein is a side-view light emitting diode package with a reflector. The side-view light emitting diode package of the present invention comprises first and second lead terminals spaced apart from each other. The package body supports the first and second lead terminals and has an elongated opening through which a light emitting diode chip mounting region and the first and second lead terminals are exposed. Reflectors are formed between the chip mounting region and sidewalls positioned in a major axis direction of the opening. Each of the reflectors has a height lower than that of the sidewall of the opening. Accordingly, light emitted from a light emitting diode chip can be reflected using the reflectors, thereby improving light emitting efficiency of the side-view light emitting diode package.08-13-2009
20090008665ORGANIC LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME - An organic light emitting element includes an organic light emitting diode formed on a substrate, coupled to a transistor including a gate, a source and a drain and including a first electrode, an organic thin film layer and a second electrode; a photo diode formed on the substrate and having a semiconductor layer including a high-concentration P doping region, a low-concentration P doping region, an intrinsic region and a high-concentration N doping region; and a controller that controls luminance of light emitted from the organic light emitting diode, to a constant level by controlling a voltage applied to the first electrode and the second electrode according to the voltage outputted from the photo diode.01-08-2009
20090114937RESIN-SEALED LIGHT EMITTING DEVICE AND ITS MANUFACTURING METHOD - An LED package is formed by separating a sealed body containing a substrate having a plurality of regions into individual bodies. The LED package includes an LED chip mounted on a recessed part in an upper surface of a substrate, a sealing resin to cover an entire surface of the region, a setting pattern provided on a bottom surface of the recessed part to set the LED chip, a wiring pad provided on the bottom surface of the recessed part, a wiring pattern provided on a slanted surface of the recessed part and serving as a light reflection part also, a wire to connect an electrode of the LED chip to the wiring pad, an external terminal provided on a lower surface of the substrate, a connection part to connect the wiring pattern connected to the wiring pad to the external terminal, and a heat radiating pattern provided on a lower surface to radiate a heat generated in the LED chip outside the LED package. The setting pattern is connected to the heat radiating pattern through the connection part.05-07-2009
20090230414LED LIGHT ENGINE KERNEL AND METHOD OF MAKING THE KERNEL - A light engine kernel for a light emitting diode (LED) includes a solid body of transparent material having an index of refraction of at least 1.5. The body has a domed, light-emitting top that is an inverted parabola of revolution, a reflective sidewall that is a compound parabolic concentrator (CPC), and a cavity at a focus of the CPC that is adapted to receive an LED. The domed top may include a phosphor coating of a yellow-emitting phosphor. The cavity may be adapted to receive only a single LED or plural LEDs of the same or different colors on a board. The kernel and LED are not integrally formed, reducing thermal degradation of the phosphor coating and improving application flexibility.09-17-2009
20090230416Al-Ni-B ALLOY MATERIAL FOR REFLECTIVE FILM - With respect to a reflection-type display device, an Al-based alloy material for a reflective film, which has excellent reflective characteristics and can be directly bonded to a transparent electrode layer such as ITO and IZO is provided. The present invention is Al—Ni—B alloy material for a reflective film, comprising aluminum containing nickel and boron, wherein a nickel content is 1.5-4 at %, a boron content is 0.1-0.5 at %, and the balance is aluminum. It is more preferable if the nickel content is 1.5-3 at %, and the boron content is 0.1-0.4 at %.09-17-2009
20090230418LIGHT EMITTING DIODE PACKAGE AND METHOD OF MANUFACTURING THE SAME - There is provided a light emitting diode package and a method of manufacturing the same in which a light emitting diode chip is separated from phosphors, and a phosphor area is variable in shape to improve thermal balance and luminous efficiency. A light emitting diode package according to an aspect of the invention may include: a package body; at least one LED chip mounted in an area of the package body and emitting excitation light; and a lens unit separated from the LED chip by a distance and mounted on an upper surface of the package body, wherein the lens unit may include a phosphor area located at one side of a lower part thereof, absorbing the excitation light of the LED chip, and generating wavelength-converted light. According to the invention, since the lens unit corresponding to the LED chip is separated from the LED chip by the predetermined distance, there can be provided the light emitting diode package having improved luminous efficiency and reliability that the phosphors are not thermally deformed by heat generated from the LED chip.09-17-2009
20090230417LIGHT EMITTING DIODE PACKAGE STRUCTURE AND METHOD FOR FABRICATING THE SAME - The present invention discloses a light emitting diode (LED) package structure, which includes a carrier, a first protrusion, a LED chip, and an adhesion layer. The first protrusion is disposed on the carrier and has a first opening to expose the carrier, wherein the first protrusion is formed by a thermal conductive material. The LED chip is disposed in the first opening on the carrier, and a ratio between a width of the first opening and a width of the LED chip is 1˜1.5. The adhesion layer is disposed between the LED chip and the carrier to bond the LED chip to the carrier.09-17-2009
20090230415ORGANIC LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME - The present invention relates to an organic light emitting element comprising: a first light emitting unit comprising a light emitting layer between a pair of electrodes; and a second light emitting unit comprising a light emitting layer between a pair of electrodes. In the organic light emitting element, one electrode of the two pairs of electrodes which is positioned on the outermost side has light reflective properties, and the other electrodes have light transmission properties, while a light-transmitting insulating layer is provided between the first and second light emitting units. The insulating layer is formed in a thickness to prevent light emitted by the light emitting layer of the light emitting unit without the light reflective electrode from interfering with other lights, or formed to have properties of scattering the emitted light. Thus, the interference between the lights emitted by the light emitting layers and the other lights is reduced, so that in the organic light emitting element, the angular dependence of light emission spectrum is small, making it possible to adjust color.09-17-2009
20090194776Light-Emitting Diode Arragement Comprising a Color-Converting Material - With a light-emitting diode arrangement (08-06-2009
20090026472Silicon LED package having horn and contact edge with (111) planes01-29-2009
20090212307Light-emitting diode chip comprising a contact structure - In a luminescence diode chip having a radiation exit area (08-27-2009
20090212313LED Module with Application-Specific Color Setting - An LED module with a blue LED chip, over which is arranged a conversion layer, which has a luminous material mixture mixing a further proportion of greater wavelength into the blue light, so that a reddish or greenish or yellowish white light is emitted from the LED module, the emitted light of the LED module having a peak or secondary peak in the red or green or yellow range.08-27-2009
20090212309Light emitting diode package structure and a packaging method thereof - An LED package structure and an LED packaging method are disclosed. The LED package structure includes a substrate, an LED unit and a transparent holding wall. The LED unit is electrically connected and located on the surface of the substrate. The transparent holding wall that corresponds to the LED unit is formed on the surface of the substrate, and has a receiving space. The LED unit is received in the receiving space. By utilizing the transparent holding wall, the colloid is controllably received in the receiving space and uniformly spread on the surface of the LED unit and around the LED unit. Thereby, the quantity of the colloid is easily controlled, and the LED package structure has a wide lighting angle due to the light emitted from the LED unit can pass through the transparent holding wall.08-27-2009
20090212308METHOD FOR PRODUCING AN LED CHIP AND LED CHIP - A method is disclosed in which a base body is prepared that comprises a layer sequence intended for the LED chip and suitable for emitting electromagnetic radiation. A cap layer is applied to at least one main surface of the base body. A cavity is introduced into the cap layer and is completely or partially filled with a luminescence conversion material. The luminescence conversion material comprises at least one phosphor. A method is also disclosed in which the cap layer comprises photostructurable material and at least one phosphor, such that it is able to function as a luminescence conversion material and can be photostructured directly. LED chips that are producible by means of the method are also described.08-27-2009
20090212312SEMICONDUCTOR LIGHT-EMITTING DEVICE - The invention discloses a semiconductor light-emitting device, which includes a substrate, a first conductive type semiconductor material layer, a second conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second electrode, and a plurality of bump structures. The first conductive type semiconductor material layer is formed on the substrate and has an upper surface which includes a first region and a second region distinct from the first region. The first electrode is formed on the first region. The light-emitting layer and the second conductive type semiconductor material layer are formed on the second region. The bump structures are formed on the upper surface of the first conductive type semiconductor material layer and between the first region and the second region. Each bump structure is made of ITO, SiO2, SiN, ZnO, polymide, BCB, SOG, InO, or SnO.08-27-2009
20090250716LIGHT EMITTING DEVICES HAVING ROUGHENED/REFLECTIVE CONTACTS AND METHODS OF FABRICATING SAME - Light emitting devices include an active region of semiconductor material and a first contact on the active region. The first contact is configured such that photons emitted by the active region pass through the first contact. A photon absorbing wire bond pad is provided on the first contact. The wire bond pad has an area less than the area of the first contact. A reflective structure is disposed between the first contact and the wire bond pad such that the reflective structure has substantially the same area as the wire bond pad. A second contact is provided opposite the active region from the first contact. The reflective structure may be disposed only between the first contact and the wire bond pad. Methods of fabricating such devices are also provided.10-08-2009
20090218582OPTICAL DEVICE AND METHOD OF FABRICATING THE SAME - A method of fabricating an optical device is disclosed. The method comprises the step of forming an optical stack of laminated lenses and a phosphor film therebetween. The method further comprises the step of attaching the optical stack to an LED die. In addition, an optical device fabricated by the above method is also disclosed.09-03-2009
20090242913SILICON BASED LIGHT EMITTING DIODE - Provided is a highly efficient silicon-based light emitting diode (LED) including a Distributed Bragg Reflector (DBR), an n-type doping layer, and a p-type substrate structure. The silicon-based LED includes: a substrate having a p-type mesa substrate structure; an active layer that is formed on the substrate and has a first surface and a second surface opposite the first surface; a first reflective layer facing the first surface of the active layer; a second reflective layer that is located on either side of the p-type substrate structure and faces the second surface of the active layer; an n-type doping layer sandwiched between the active layer and the first reflective layer; a first electrode electrically connected to the n-type doping layer; and a second electrode electrically connected to the p-type substrate structure.10-01-2009
20090230419LIGHT EMITTING DEVICE - The present invention provides a light emitting device which comprises a blue light emitting diode, and at least an orthosilicate based phosphor for emitting light ranging from a green to yellow regions and a nitride or oxynitride based phosphor for emitting light in a red region over the light emitting diode. Accordingly, since white light with a continuous spectrum ranging from green to red can be implemented, a light emitting device with improved color rendering can be provided, and the light emitting device can be used for a general illumination or a flash. Further, since the phosphors having stable chemical characteristics against their external environment such as moisture are employed, the stability in optical characteristics of the light emitting device can also be improved.09-17-2009
20080315232LIGHT-EMITTING SEMICONDUCTOR DEVICE - A light-generating semiconductor region is grown on a substrate of electroconductive silicon or like light-absorptive material. An anode is placed atop the light-generating semiconductor region, and a cathode under the substrate. The light-generating semiconductor region and the substrate are encapsulated in an epoxy envelope. In order to prevent the substrate from absorbing the light that has been radiated from the light-generating semiconductor region and reflected back from the envelope, the substrate has its side surfaces covered by a reflector layer. The reflector layer has its surfaces roughened, as a result of the roughening of the underlying substrate surfaces by dicing, for scattering the incident light.12-25-2008
20080315231LIGHT SOURCE, OPTICAL PICKUP, AND ELECTRONIC APPARATUS - A light source of the present invention includes: a semiconductor light emitting device which has a light emitting face and emits light from part of the light emitting face; a container which has a light transmitting window for transmitting the light and accommodates the semiconductor light emitting device; and a gettering portion for performing gettering of a material containing at least one of carbon and silicon. The gettering portion is positioned, in the container, in a region other than the part of the light emitting face of the semiconductor light emitting device.12-25-2008
20090095970WHITE PHOSPHORS, METHODS OF MAKING WHITE PHOSPHORS, WHITE LIGHT EMITTING LEDS, METHODS OF MAKING WHITE LIGHT EMITTING LEDS, AND LIGHT BULB STRUCTURES - Phosphor compositions, white phosphor compositions, methods of making white phosphor compositions, tinted white phosphor compositions, methods of making tinted white phosphor compositions, LEDs, methods of making LEDs, light bulb structures, paints including phosphor compositions, polymer compositions including phosphor compositions, ceramics including phosphor compositions, and the like are provided.04-16-2009
20090095969Substrate for mounting an optical semiconductor element, manufacturing method thereof, an optical semiconductor device, and manufacturing method thereof - A substrate for mounting optical semiconductor elements is provided, including a base substrate having an insulating layer and a plurality of wiring circuits formed on the upper face of the insulating layer, and having at least one external connection terminal formation opening portion which penetrates the insulating layer and reaches the wiring circuits; and an optical reflection member, which is provided on the upper face of the base substrate, and which forms at least one depressed portion serving as an area for mounting an optical semiconductor element.04-16-2009
20090095967LIGHT EMITTING DEVICE - The lighting device (04-16-2009
20090095966Multiple conversion material light emitting diode package and method of fabricating same - An emitter package comprising a light emitting diode (LED) emitting light at a wavelength within a wavelength range and a plurality of phosphors. Each of the phosphors absorbs at least some light from the LED and re-emits a different wavelength of light. The package emits a combination of light from the LED and the plurality of phosphors, with the phosphors having excitation characteristics such that the emitter package emits light within a standard deviation of a target color for LEDs emitting at the wavelengths with the wavelength range. A method for fabricating emitter packages comprising fabricating a plurality of LEDs, each of which emits at a wavelength within a range of wavelengths. Each of the LEDs are arranged in a respective package with a plurality of conversion materials so that at least some light from each of the LEDs is absorbed and re-emitted by its corresponding conversion materials. The plurality of conversion materials have excitation characteristics that compensate for different LED emission wavelengths within the LED range of wavelengths such that each of the LED packages emits light within a standard deviation from a target color.04-16-2009
20090242918High Efficiency Group III Nitride LED with Lenticular Surface - A light emitting diode is disclosed that includes a conductive substrate, a bonding metal on the conductive substrate and a barrier metal layer on the bonding metal. A mirror layer is encapsulated by the barrier metal layer and is isolated from the bonding metal by the barrier layer. A p-type gallium nitride epitaxial layer is on the encapsulated mirror, an indium gallium nitride active layer is on the p-type layer, and an n-type gallium nitride layer is on the indium gallium nitride layer, and a bond pad is made to the n-type gallium nitride layer.10-01-2009
20090242917Light-emitting device including light-emitting diode - A light-emitting device includes a light-emitting diode, a red light-emitting phosphor layer, a yellow light-emitting phosphor layer, and a blue light-emitting phosphor layer. These layers are stacked in the stacking sequence of the yellow, blue, and red phosphor layers in order of increasing distance from the LED. The stacking sequence of the yellow and blue phosphor layers is first determined in such a manner that these layers do not interact with each other. The stacking sequence of the red and yellow phosphor layers and the stacking sequence of the red and blue phosphor layers are determined by the discriminant D. This determination of the stacking sequence suppresses a reduction in the conversion efficiency of the phosphors due to concentration quenching, improving the emission efficiency of the light-emitting device.10-01-2009
20090242916Method for packaging a light emitting device - A method for packaging a light emitting element includes a step of providing a carrier formed with an anode electrode and a cathode electrode, a step of providing a light emitting object by utilizing a light emitting diode chip having a positive and negative electrodes, a step of directly contacting the carrier and the light emitting diode chip to establish electrical communication among the anode and cathode electrodes and the positive and negative electrodes; and a step of firmly bonding the carrier and the light emitting diode chip by which to simplify assembling procedure and further to reduce manufacturing cost and enhance production efficiency.10-01-2009
20090242914LED ASSEMBLY WITH HIGH HEAT DISSIPATING CAPABILITY - An LED assembly includes a substrate and a plurality of LEDs mounted on the substrate. Each LED comprises an LED die mounted on the substrate via an adhesive, a base spacedly surrounding the LED die, a pair of leads inserted in the base to be in electrical connection with the LED die, and an encapsulant sealing the LED die and inner parts of the leads therein. A thickness of the adhesive is selected to be less than 0.01 inches. The substrate contains a kind of coolant therein to rapidly remove heat from the LED die to atmosphere.10-01-2009
20090315051PHOTOELECTRIC SEMICONDUCTOR DEVICE CAPABLE OF GENERATING UNIFORM COMPOUND LIGHTS - A transparent layer and a phosphor layer are covered on the LED chip for increasing light emission efficiency and evenness of the LED. Based on angle-dependent emission strength of the LED chip, the phosphor layer is designed with different thickness or contains different phosphor powder concentration in different section. The lights emitted with different strength from different angle of the LED chip are transformed into uniform compound lights after passing through the phosphor layer that has different thickness or phosphor powder concentration. Micro structures capable of destroying the full reflection occurred on the incident lights are further configured on both the inner and outer surfaces of the phosphor layer to increase the light emission efficiency.12-24-2009
20090315058NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - There are provided a nitride semiconductor light emitting device and a method of manufacturing the same, the device including: a first conductivity type nitride semiconductor layer formed on a substrate; an active layer formed on the first conductivity type nitride semiconductor layer; a second conductivity type nitride semiconductor layer formed on the active layer; a light-transmitting low refractive index layer formed on the second conductivity type nitride semiconductor layer, the light-transmitting low refractive index layer having a plurality of openings through which the second conductivity type nitride semiconductor layer is partially exposed and formed of a material having a refractive index lower than a refractive index of the second conductivity type nitride semiconductor layer; and a high conductivity ohmic contact layer formed on the light-transmitting low refractive index layer and connected to the second conductivity type nitride semiconductor layer through the openings of the light-transmitting low refractive index layer.12-24-2009
20090315049OPTICAL SEMICONDUCTOR ELEMENT MOUNTING PACKAGE, AND OPTICAL SEMICONDUCTOR DEVICE USING THE SAME - An optical semiconductor element mounting package that has good adhesion between the resin molding and the lead electrodes and has excellent reliability is provided, as well as an optical semiconductor device using the package is also provided. The optical semiconductor element mounting package having a recessed part that serves as an optical semiconductor element mounting region, wherein the package is formed by integrating: a resin molding composed of a thermosetting light-reflecting resin composition, which forms at least the side faces of the recessed part; and at least a pair of positive and negative lead electrodes disposed opposite each other so as to form part of the bottom face of the recessed part, and there is no gap at a joint face between the resin molding and the lead electrodes.12-24-2009
20090250713Reflective Contact for a Semiconductor Light Emitting Device - A light emitting device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region. A contact is formed on the semiconductor structure, the contact comprising a reflective metal in direct contact with the semiconductor structure and an additional metal or semi-metal disposed within the reflective metal. In some embodiments, the additional metal or semi-metal is a material with higher electronegativity than the reflective metal. The presence of the high electronegativity material in the contact may increase the overall electronegativity of the contact, which may reduce the forward voltage of the device. In some embodiments, an oxygen-gathering material is included in the contact.10-08-2009
20090250714White light emitting diode and lighting apparatus using the same - Provided is a white LED including a substrate having a reflecting body provided thereon; an LED chip mounted on the substrate; a fluorescence reflecting layer formed on the LED chip; and a phosphor layer formed on the fluorescence reflecting layer and having a higher refractive index than the fluorescence reflecting layer.10-08-2009
20090250717LIGHT EMITTING DEVICE - A light emitting device includes a light emitting element having at least two electrodes disposed at the side of the light output surface thereof, and a base member having a recess and lead portions corresponding to the electrodes, the light emitting element being mounted on the base member and received in the recess, wherein the light output surface faces toward opening of the recess that becomes smaller while approaching the light output surface, and the electrodes are respectively in electrical connection with the lead portions that extend from the connection positions to outer edge of the base member for power connection, and a light reflecting portion is disposed in the recess adjacent to the light output surface such that the light emitted from the light emitting element can be reflected to walls of the recess to form a substantially collimated light beam so as to improve light efficiency.10-08-2009
20090140277SOLIDE-STATE LIGHT SOURCE - A solid-state light source includes a substrate, a solid-state light-emitting chip, a plurality of micro-members and a light-permeable encapsulation. The substrate has a substantially flat surface. The solid-state light-emitting chip is arranged on the substantially flat surface of the substrate and electrically connected to the substrate. The micro-members are arranged on the surface of the substrate and parallel with the solid-state light emitting chip. The light-permeable encapsulation is arranged on the surface of the substrate and covers the solid-state light-emitting chip and the micro-members.06-04-2009
20090256169Deposition Substrate and Method for Manufacturing Light-Emitting Device - The deposition substrate of the present invention includes a light-transmitting substrate having a first region and a second region. In the first region, a first heat-insulating layer transmitting light is provided over the light-transmitting substrate, a light absorption layer is provided over the first heat-insulating layer, and a first organic compound-containing layer is provided over the light absorption layer. In the second region, a reflective layer is provided over the light-transmitting substrate, a second heat-insulating layer is provided over the reflective layer, and a second organic compound-containing layer is provided over the second heat-insulating layer. The edge of the second heat-insulating layer is placed inside the edge of the reflective layer, and there is a space between the first heat-insulating layer and the second heat-insulating layer.10-15-2009
20090242915Semiconductor light-emitting device - A semiconductor light-emitting device includes: a hollow body including a bottom wall and a surrounding wall cooperating with the bottom wall to define an encapsulant-receiving recess, the bottom wall being formed with a through-hole, the surrounding wall having a diffuse surface that surrounds the encapsulant-receiving recess; a heat-dissipating body provided on a bottom side of the bottom wall and covering the through-hole in the bottom wall; a light-emitting chip disposed in the through-hole in the bottom wall; a transparent encapsulant filling the encapsulant-receiving recess and the through-hole; and a wavelength-converting layer covering the transparent encapsulant.10-01-2009
20100148197SELECTIVE DECOMPOSITION OF NITRIDE SEMICONDUCTORS TO ENHANCE LED LIGHT EXTRACTION - A method of texturing a surface within or immediately adjacent to a template layer of a LED is described. The method uses a texturing laser directed through a substrate to decompose and pit a semiconductor material at the surface to be textured. By texturing the surface, light trapping within the template layer is reduced. Furthermore, by patterning the arrangement of pits, metal coating each pit can be arranged to spread current through the template layer and thus through the n-doped region of a LED.06-17-2010
20100148205LENS, MANUFACTURING METHOD THEREOF AND LIGHT EMITTING DEVICE PACKAGE USING THE SAME - A lens and a light emitting device package formed by introducing surface mount technology (SMI) are disclosed. The lens includes a refractive portion which refracts incident light, and at least one surface mount portion, wherein a portion of the surface mount portion is formed in the refractive portion.06-17-2010
20090261364Fluorescent substance - A fluorescent substance characterized by comprising a base crystal composed of a compound represented by the formula: M10-22-2009
20090261371Light-Emitting Device - An embodiment of the invention concerns a light-emitting device with an adjustable, time-variable luminance. This is achieved through electrically conductive tracks that are applied to the first electrode area. The conductive tracks are driven in a time-variable manner with different levels of electrical power.10-22-2009
20120193669Contacting an Optoelectronic Semiconductor Component Through a Conversion Element and Corresponding Optoelectronic Semiconductor Component - A method for manufacturing an optoelectronic semiconductor component, comprising: providing a semiconductor chip in a composite wafer, comprising an active side for emitting a primary radiation and a contact terminal which is arranged on the active side; depositing a coupling element on the active side; attaching a luminescence conversion element, for converting part of the primary radiation into a secondary radiation, to the coupling element.08-02-2012
20120193666LIGHT-REFLECTIVE ANISOTROPIC CONDUCTIVE ADHESIVE AND LIGHT-EMITTING DEVICE - A light-reflective anisotropic conductive adhesive used for anisotropic conductive connection of a light-emitting element to a wiring board includes a thermosetting resin composition, conductive particles, and light-reflective insulating particles. The light-reflective insulating particles are at least one of inorganic particles selected from the group consisting of titanium oxide, boron nitride, zinc oxide, and aluminum oxide, or resin-coated metal particles formed by coating the surface of scale-like or spherical metal particles with an insulating resin.08-02-2012
20120193663LIGHT EMITTING DIODE AND FABRICATION METHOD THEREOF - A fabrication method of a light-emitting diode including forming an epitaxial layer on a first substrate; forming a metal pad and a stress release ring on the epitaxial layer, wherein the stress release ring surrounds the metal pad; performing a substrate replacement process to transfer the epitaxial layer, the metal pad, and the stress release ring onto a second substrate, wherein the metal pad and the stress release ring are disposed between the epitaxial layer and the second substrate; patterning the epitaxial layer to expose a portion of the stress release ring; and removing the stress release ring to suspend a portion of the epitaxial layer. Moreover, a light emitting diode is provided.08-02-2012
20120193661GAP ENGINEERING FOR FLIP-CHIP MOUNTED HORIZONTAL LEDS - A horizontal LED die is flip-chip mounted on a mounting substrate to define a gap that extends between the closely spaced apart anode and cathode contacts of the LED die, and between the closely spaced apart anode and cathode pads of the substrate. An encapsulant is provided on the light emitting diode die and the mounting substrate. The gap is configured to prevent sufficient encapsulant from entering the gap that would degrade operation of the LED.08-02-2012
20120193659STRUCTURES AND SUBSTRATES FOR MOUNTING OPTICAL ELEMENTS AND METHODS AND DEVICES FOR PROVIDING THE SAME BACKGROUND - Methods are disclosed including generating a substrate surface topography that includes a mounting portion that is higher than a relief portion that defines a perimeter of the mounting portion.08-02-2012
20100059772Light Emitting Device - The present invention provides a light emitting device. The light emitting device has a light distribution in which a light distribution I (θ, φ) obtained when light emitted from a chip of the light emitting device is directly measured is not dependent on a direction φ and is substantially represented by I (θ, φ)=I (θ). I (θ, φ) represents a light intensity distribution in a direction (θ, φ), θ represents an angle from a direction of a normal to a light extraction surface of the light emitting device (0≦θ≦90°), φ represents a rotation angle around the normal (0≦φ≦360°), and I (θ) represents a monotone decreasing function with which 0 is approached when θ=90° is satisfied. In the light emitting device, of a structural body constructing the chip of the light emitting device, with regard to a size of a portion of the structural body which is transparent to light emitted from a light emitting layer, a ratio (an aspect ratio) between the size in a lateral direction and the size in a thickness direction is not less than 5 and a structure having a light scattering function is provided on a surface of the light emitting device chip or in an interior of the transparent portion of the structural body.03-11-2010
20090127577OPTICAL WAVEGUIDE DEVICE PRODUCTION METHOD, OPTICAL WAVEGUIDE DEVICE PRODUCED BY THE METHOD, AND OPTICAL WAVEGUIDE CONNECTION STRUCTURE TO BE USED FOR THE DEVICE - An optical waveguide device production method which ensures that a receptacle structure can be easily and highly accurately produced in a single step, an optical waveguide device produced by the method, and an optical waveguide connection structure to be used for the optical waveguide device. The optical waveguide device includes a light emitting element (05-21-2009
20090261366OPTOELECTRONIC COMPONENT - An optoelectronic component with a semiconductor body that comprises an active semiconductor layer sequence is disclosed, which is suitable for generating electromagnetic radiation of a first wavelength that is emitted from a front face of the semiconductor body. The component also comprises a first wavelength conversion substance following the semiconductor body in its direction of emission, which converts radiation of the first wavelength into radiation of a second wavelength different from the first wavelength, and a first selectively reflecting layer between the active semiconductor layer sequence and the first wavelength conversion substance that selectively reflects radiation of the second wavelength and is transparent to radiation of the first wavelength.10-22-2009
20100038662LIGHT EMITTING DEVICE AND PRODUCTION METHOD OF SAME - A light emitting device, and a production method thereof, is provided having for a light source thereof a vertical geometry light emitting diode, that allows a large current to flow through the vertical geometry light emitting diode and takes into consideration the dissipation of heat occurring at that time or the expansion and contraction of a metal member due to thermal stress caused by that heat. The light emitting device at least comprises a package having a plurality of mutually separated package electrodes; a vertical geometry light emitting diode having a light emitting layer positioned between a p-type semiconductor layer and an n-type semiconductor layer, an upper partial electrode of the uppermost layer, and a lower electrode of the lowermost layer, wherein the lower electrode is joined onto one of the package electrodes; and, a conductive connecting member that connects the upper electrode of the vertical geometry light emitting diode with another of package electrodes; wherein the junction between said one of the package electrodes and the lower electrode, the junction between the upper electrode and the conductive connecting member, and the junction between the conductive connecting member and said other of package electrodes are made with solder.02-18-2010
20100155760ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed are an organic light emitting display device with improved yield and processing efficiency, which includes an interlayer capable of being separated into a hydrophilic region and a hydrophobic region on top of a hole injection layer in an organic light emitting device and a plurality of layers including a light emitting layer and which is fabricated without using a shadow mask, as well as a method for manufacturing the same. The manufacturing method includes preparing a substrate having a plurality of pixel regions defined in a matrix form, arranging an anode in each of the pixel regions, forming a hole injection layer on the anode by the solution process, forming an interlayer with hydrophobic properties on the hole injection layer by a solution process, selectively UV irradiating the interlayer to define a hydrophilic region on the interlayer, forming a light emitting layer on the interlayer by the solution process, and arranging a cathode on the substrate having the light emitting layer.06-24-2010
20100264448LIGHT EMTTING DEVICE - Disclosed herein is a light emitting device. The light emitting device includes a light emitting diode disposed on a substrate to emit light of a first wavelength. A transparent molding part encloses the LED, a lower wavelength conversion material layer is disposed on the transparent molding part, and an upper wavelength conversion material layer is disposed on the lower wavelength conversion material layer. The lower wavelength conversion material layer contains a phosphor converting the light of the first wavelength into light of a second wavelength longer than the first wavelength, and the upper wavelength conversion material layer contains a phosphor converting the light of the first wavelength into light of a third wavelength, which is longer than the first wavelength but shorter than the second wavelength. Light produced via wavelength conversion is prevented from being lost by the phosphor. Light emitting devices including a multilayer reflection mirror are also disclosed.10-21-2010
20100264443SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light emitting device having high reliability and excellent light distribution characteristics is provided. Specifically, a semiconductor light emitting device 10-21-2010
20100155764GLASS-COVERED LIGHT-EMITTING ELEMENT AND GLASS-COVERED LIGHT-EMITTING DEVICE - There is provided a glass-covered light-emitting element and a glass-covered light-emitting device, which contain a properly low content of bubbles that reduce transmittance by scattering of visible light, and which are covered with a glass film having a total light transmittance of 85% or more06-24-2010
20100155765LIGHT EMITTING DEVICE HAVING VERTICAL STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A light emitting device having a vertical structure, which includes a semiconductor layer having a first surface and a second surface, a first electrode arranged on the first surface of the semiconductor layer, a transparent conductive oxide (TCO) layer arranged on the second surface of the semiconductor layer and a second electrode arranged on the TCO layer.06-24-2010
20100155763SYSTEMS AND METHODS FOR APPLICATION OF OPTICAL MATERIALS TO OPTICAL ELEMENTS - Methods are disclosed including heating an optical element. An optical material is applied to the heated optical element to provide a conformal layer that is cured via the thermal energy in the heated optical element.06-24-2010
20110127554Light emitting device and method of manufacturing the same - A light emitting device may include a substrate, an n-type clad layer, an active layer, and a p-type clad layer. A concave-convex pattern having a plurality of grooves and a mesa between each of the plurality of grooves may be formed on the substrate, and a reflective layer may be formed on the surfaces of the plurality of grooves or the mesa between each of the plurality of grooves. Therefore, light generated in the active layer may be reflected by the reflective layer, and extracted to an external location.06-02-2011
20110127556ORGANIC LIGHT EMITTING DIODE LIGHTING APPARATUS - An organic light emitting diode lighting apparatus includes: a substrate main body including a sealing area and a sealing line surrounding the sealing area; a plurality of first line electrodes of which both ends are located within the sealing area; a plurality of second line electrodes, at least one end of which is located outside the sealing area; an encapsulating member disposed to face the substrate main body; a sealant disposed on the sealing line to bond the substrate main body and the encapsulating member and seal the sealing area; a first connection member coupled to the ends of the plurality of first line electrodes within the sealing area; and a second connection member coupled to the ends of the plurality of second line electrodes outside the sealing area.06-02-2011
20090315055PHOTOELECTROCHEMICAL ROUGHENING OF P-SIDE-UP GaN-BASED LIGHT EMITTING DIODES - A method for photoelectrochemical (PEC) etching of a p-type gallium nitride (GaN) layer of a heterostructure, comprising using an internal bias in a semiconductor structure to prevent electrons from reaching a surface of the p-type layer, and to promote holes reaching the surface of the p-type layer, wherein the semiconductor structure includes the p-type layer, an active layer for absorbing PEC illumination, and an n-type layer.12-24-2009
20090315052LIGHT EMITTING DIODE LIGHT SOURCE AND BACKLIGHT HAVING SAME - An LED light source includes an LED die and a transparent encapsulation. The LED die includes a die emitting surface. The transparent encapsulation includes a reflective surface and an encapsulation emitting surface. The LED die is encapsulated by the transparent encapsulation such that the die emitting surface faces the encapsulation emitting surface. The transparent encapsulation is generally convex albeit having a concave recessed portion. The recessed portion is aligned with the die emitting surface and shaped so as to increase an effect of total internal reflection of light rays generated by the light emitting diode die and incident thereon.12-24-2009
20090315053LIGHT EMITTING DEVICE - The present invention provides a light emitting device, comprising a first light emitting diode for emitting light in an ultraviolet wavelength region; at least one phosphor arranged around the first light emitting diode and excited by the light emitted from the first light emitting diode to emit light having a peak wavelength longer than the wavelength of the light emitted from the first light emitting diode; and at least one second light emitting diode for emitting light having a wavelength different from the peak wavelength of the light emitted from the phosphor. According to the present invention, there is provided a white light emitting device, wherein using a light emitting diode for emitting light different in wavelength from light that is ex-cititively emitted from the phosphor, an excitation light source, i.e., light in the ultraviolet region for exciting the phosphor is effectively used, thereby improving energy conversion efficiency and improving reliability.12-24-2009
20090315050SEMICONDUCTOR LIGHT EMITTING DEVICE - Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a first semiconductor layer, a second semiconductor layer, an active layer formed between the first semiconductor layer and the second semiconductor layer, a first reflective electrode on the first semiconductor layer to reflect incident light, and a second reflective electrode on the second semiconductor layer to reflect the incident light.12-24-2009
20090315048Optoelectronic Semiconductor Chip - An optoelectronic semiconductor chip (12-24-2009
20100148199Light emitting device with fine pattern - A semiconductor light emitting device includes a semiconductor light emitting structure including first and second conductivity type semiconductor layers, and an active layer disposed therebetween, first and second electrodes connected to the first and second conductivity type semiconductor layers, respectively, and a fine pattern for light extraction, formed on a light emitting surface from which light generated from the active layer is emitted. The fine pattern for light extraction is formed as a graded refractive index layer having a refractive index which decreases with vertical distance from the light emitting surface.06-17-2010
20100148206LED package and method of assembling the same - An LED package is provided. The LED package includes a carrier, an LED chip, a conductive structure, a first encapsulant, a lens and a heat sink. The carrier is cup shaped and comprises a bottom portion and a lateral wall. The LED chip is received in the carrier and disposed on the bottom portion. The conductive structure is electrically connected to the LED chip. The first encapsulant is received in the carrier and fixing the carrier and the conductive structure. The lens is corresponding to the LED chip. The carrier is embedded in the heat sink, and heat generated by the LED chip is transmitted to the heat sink via the bottom portion and the lateral wall of the carrier.06-17-2010
20100148200LIGHT EMITTING DIODE WITH LIGHT CONVERSION - An exemplary light emitting diode includes a light emitting diode chip, two optical wavelength converting layers, and an encapsulant layer. The light emitting diode chip has an light emitting surface. The light emitting diode chip is used to emit a monochromatic light from the light emitting surface. The light emitting surface includes a first region, a second region, and a third region. The two optical wavelength converting layers covers the first and the third regions of the light emitting surface. The two optical wavelength converting layers are configured for converting the monochromatic light received from the light emitting diode chip and emitting light with a converted wavelength from the light emitting diode. The encapsulant layer covers the second region of the light emitting surface for directing light therefrom.06-17-2010
20100148202SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light-emitting device includes (A) a light-emitting portion obtained by laminating in sequence a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; (B) a first electrode electrically connected to the first compound semiconductor layer; (C) a transparent conductive material layer formed on the second compound semiconductor layer; (D) an insulating layer composed of a transparent insulating material and having an opening, the insulating layer being formed on the transparent conductive material layer; and (E) a second electrode that reflects light from the light-emitting portion, the second electrode being formed on the transparent conductive material layer and on the insulating layer in a continuous manner, wherein, assuming that areas of the active layer, the transparent conductive material layer, the insulating layer, and the second electrode are respectively S06-17-2010
20100155759LIGHT-EMITTING DEVICE - The light-emitting device 100 of the present invention has a first cladding layer 106; an active layer 108 formed above the first cladding layer 106; and a second cladding layer 110 formed above the active layer 108, wherein the active layer 108 has a first side surface 107, and a second side surface 109 parallel to the first side surface 107; at least a portion of the active layer 108 constitutes a gain region 180; the gain region 180 has a first end surface 140 disposed on the first side surface 107 side and a second end surface 142 disposed on the second side surface 109 side, and extends from the first end surface 140 to the second end surface 142 in the direction inclined to the normal to the first side surface 107 as viewed from above; the second end face 109 is orthogonal to the direction in which the gain region 180 extends as viewed from above; a reflecting part 150 is disposed on the second end face 109; and a part of the light 10 generated in the gain region 180 is reflected in the reflecting part 150 disposed on the second end face 142 and is emitted from the first end surface 140.06-24-2010
20100155757Organic light emitting diode display - The present invention relates to an OLED display, and an OLED display according to an exemplary embodiment of the present invention includes a substrate member, an OLED including a first electrode formed on the substrate member, an organic emission layer formed on the first electrode, and a second electrode formed on the organic emission layer, and a cover layer formed on the second electrode and covering the OLED. The cover layer includes a cover main body and a corner-cube pattern formed on an opposite side of a side that faces the second electrode among both sides of the cover main body.06-24-2010
20100155758LIGHT EMITTING DEVICE AND MANUFACTURING METHOD FOR THE SAME - A light emitting device is provided, including a resin which can be manufactured according to a simple process and deliver a desired scattering property. The light emitting device is manufactured according to a step for mixing two or more types of immiscible liquid materials to obtain a composition containing at least two types of materials phase-separated in a sea-island structure, and a step for arranging the composition in proximity to an LED chip, curing the composition with the sea-island structure being maintained, thereby forming an encapsulation resin. Accordingly, it is possible to form an island region which serves as a scattering center, according to a simple step of mixing materials.06-24-2010
20100155762STANDING TRANSPARENT MIRRORLESS LIGHT EMITTING DIODE - An (Al, Ga, In)N light emitting diode (LED) in which multi-directional light can be extracted from one or more surfaces of the LED before entering a shaped optical element and subsequently being extracted to air. In particular, the (Al, Ga, In)N and transparent contact layers (such as ITO or ZnO) are embedded in or combined with a shaped optical element comprising an epoxy, glass, silicon or other material molded into an inverted cone shape, wherein most of the light entering the inverted cone shape lies within a critical angle and is extracted. In addition, the present invention stands the LED on end, i.e., rotates the position of the LED within the shaped optical element by approximately 90° as compared to a conventional LED, in order to extract light more effectively from the LED. The present invention also minimizes internal reflections within the LED by eliminating mirrors and/or mirrored surfaces, in order to minimize re-absorption of the LED's light by the emitting layer (or the active layer) of the LED. To assist in minimizing internal reflections, transparent electrodes, such as ITO or ZnO, may be used. Surface roughening by patterning or anisotropically etching (i.e., creating microcones) may also assist in light extraction, as well as minimizing internal reflections.06-24-2010
20100155756LIGHT EMITTING DIODE PACKAGE AND PROJECTION APPARATUS - A light emitting diode (LED) package including a carrier, at least one LED chip, and a light guide element is provided. The LED chip is disposed on the carrier. The light guide element including a light transmissive body, a light integration part, a reflective film, and a support part is disposed on the carrier and above the LED chip. The light integration part connected to the light transmissive body and disposed between the light transmissive body and the LED chip has a light incident surface facing the LED chip and at least one side. The side connects the light transmissive body and the light incident surface. The reflective film is disposed on the side. The support part leaning on the carrier is connected to the light transmissive body and surrounds the light integration part. The light transmissive body, the light integration part, and the support part are integrally formed.06-24-2010
20100155755LIGHT-EMITTING DIODE WITH LIGHT-CONVERSION LAYER - A method for making a lighting apparatus includes providing a substrate and disposing a light-emitting diode overlying the substrate. The light-emitting diode has a top surface oriented away from the substrate and a plurality of side surfaces. A light-conversion material is provided that includes a substantially transparent base material and a wave-shifting material dispersed in the base material. The concentration of the wave-shifting material can be at least 30%. In an embodiment, the concentration of the wave-shifting material can be approximately 50% or 70%. A predetermined amount of the light-conversion material is deposited on the top surface of the light-emitting diode while the side surfaces are maintained substantially free of the light-conversion material.06-24-2010
20090289269PACKAGING STRUCTURE OF LIGHT EMITTING DIODE - The present invention discloses a light-emitting diode packaging structure, comprising a base; a chip; a first material disposed on at least one side of the chip and having a first refraction index; a second material disposed upon the chip, having a second refraction index, and separated with the first material with an interface therebetween to refract the light refracted from the first material; and a ball lens disposed upon the second material and forming a confined space with the base; whereby, the light emitted from the chip refracts through the first refraction material and the second refraction material and finally emits out from the ball lens.11-26-2009
20100163911ELECTRODE STRUCTURES FOR LEDS WITH INCREASED ACTIVE AREA - An electrode structure is disclosed for enhancing the brightness and/or efficiency of an LED. The electrode structure can have a metal electrode and an optically transmissive thick dielectric material formed intermediate the electrode and a light emitting semiconductor material. The electrode and the thick dielectric cooperate to reflect light from the semiconductor material back into the semiconductor so as to enhance the likelihood of the light ultimately being transmitted from the semiconductor material. Such LED can have enhanced utility and can be suitable for uses such as general illumination. The semiconductor material can have a cutout formed therein and a portion of the electrode can be formed outside of the cutout and a portion of the electrode can be formed inside of the cutout. The portion of the electrode outside the cutout can be electrically isolated from the semiconductor material by the dielectric material.07-01-2010
20100163907CHIP LEVEL PACKAGE OF LIGHT-EMITTING DIODE - The application discloses a light-emitting diode chip level package structure including: a permanent substrate having a first surface and a second surface; a first electrode on the first surface; a second electrode on the second surface; an adhesive layer on where the first surface of the permanent substrate is not covered by the first electrode; a growth substrate on the adhesive layer; a patterned semiconductor structure on the growth substrate; a third electrode and a fourth electrode on the patterned semiconductor structure and electrically connect with the patterned semiconductor structure; an electrical connecting structure on the sidewall of the patterned semiconductor structure electrically connecting the third electrode and the fourth electrode with the first electrode; and an insulation layer located on the side wall of the patterned semiconductor structure and between the electrical connecting structure for electrically insulating the patterned semiconductor structure.07-01-2010
20100163906Light Emitting Device with Air Bars and Method of Manufacturing the Same - Disclosed are a light emitting device having at least one air bar capable of improving light extracting efficiency and a method of manufacturing the same. With the present invention, there is provided a method of manufacturing a light emitting device including a semiconductor layer(s) having an air-bar layer(s) with a plurality of air bars. The method includes at least one process cycle for forming the semiconductor layer(s). The process cycle includes: forming a patterning thin-film layer on a substrate or a thin-film layer; forming on the patterning thin-film layer an etching guide pattern and an air-bar pattern connected to the etching guide pattern; forming a semiconductor layer(s) on the patterns and exposing the etching guide pattern; wet-etch the exposed etching guide pattern by using a wet-etching solution; and etch the air-bar pattern connected to the etching guide pattern.07-01-2010
20100187554LIGHT EMITTING DEVICE HAVING VERTICAL STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A light emitting device having a vertical structure and a method for manufacturing the same, which are capable of increasing light extraction efficiency, are disclosed. The method includes forming a light extraction layer on a substrate, forming a plurality of semiconductor layers on the light extraction layer, forming a first electrode on the semiconductor layers, forming a support layer on the first electrode, removing the substrate, and forming a second electrode on a surface from which the substrate is removed.07-29-2010
20100187555(Al,Ga,In)N AND ZnO DIRECT WAFER BONDED STRUCTURE FOR OPTOELECTRONIC APPLICATIONS, AND ITS FABRICATION METHOD - An (Al, Ga, In)N and ZnO direct wafer bonded light emitting diode (LED), wherein light passes through electrically conductive ZnO. Flat and clean surfaces are prepared for both the (Al, Ga, In)N and ZnO wafers. A wafer bonding process is then performed between the (Al, Ga, In)N and ZnO wafers, wherein the (Al, Ga, In)N and ZnO wafers are joined together and then wafer bonded in a nitrogen ambient under uniaxial pressure at a set temperature for a set duration. After the wafer bonding process, ZnO is shaped for increasing light extraction from inside of LED.07-29-2010
20100187552HYBRID WHITE ORGANIC LIGHT EMITTTNG DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided are a hybrid white organic light emitting diode (OLED) and a method of fabricating the same. A HOMO level difference between a fluorescent emission layer and an electron transport layer in an organic emission layer (OLED) becomes higher than that between the other layers or a LUMO level difference between a fluorescent emission layer and a hole transport layer is higher than that between the other layers, so that a recombination region is restricted to a part of an emission layer to obtain high-efficiency fluorescent light emission. In addition, triplet excitons that are not used in a fluorescent emission layer are transferred to an auxiliary emission layer formed to be spaced apart from a recombination region by a predetermined distance to emit light in a different color from the fluorescent emission layer, so that both singlet and triplet excitons formed in the OLED are used to obtain high-efficiency white light emission.07-29-2010
20100258827LIGHT-EMITTING DIODE PACKAGE AND WAFER-LEVEL PACKAGING PROCESS OF LIGHT-EMITTING DIODE - A wafer-level packaging process of a light-emitting diode is provided. First, a semiconductor stacked layer is formed on a growth substrate. A plurality of barrier patterns and a plurality of reflective layers are then formed on the semiconductor stacked layer, wherein each reflective layer is surrounded by one of the barrier patterns. A first bonding layer is then formed on the semiconductor stacked layer to cover the barrier patterns and the reflective layers. Thereafter, a carrying substrate having a plurality of second bonding layers and a plurality of conductive plugs electrically insulated from each other is provided, and the first bonding layer is bonded with the second bonding layer. The semiconductor stacked layer is then separated from the growth substrate. Next, the semiconductor stacked layer is patterned to form a plurality of semiconductor stacked patterns. Next, each semiconductor stacked pattern is electrically connected to the conductive plug.10-14-2010
20100258828SOLID STATE LIGHT EMITTER WITH NEAR-UV PUMPED NANOPHOSPHORS FOR PRODUCING HIGH CRI WHITE LIGHT - A solid state white light emitting device includes a semiconductor chip producing near ultraviolet (UV) electromagnetic energy in a range of 380-420 nm, e.g. 405 nm. The device may include a reflector forming and optical integrating cavity. Phosphors, such as doped semiconductor nanophosphors, within the chip packaging of the semiconductor device itself, are excitable by the near UV energy. However the re-emitted light from the phosphors have different spectral characteristics outside the absorption ranges of the phosphors, which reduces or eliminates re-absorption. The emitter produces output light that is at least substantially white and has a color rendering index (CRI) of 75 or higher. The white light output of the emitter may exhibit color temperature in one of the following specific ranges along the black body curve: 2,725±145° Kelvin; 3,045±175° Kelvin; 3,465±245° Kelvin; 3,985±275° Kelvin; 4,503±243° Kelvin; 5,028±283° Kelvin; 5,665±355° Kelvin; and 6,530±510° Kelvin.10-14-2010
20090090925SEMICONDUCTOR DEVICE - There are a silicon laser device having a IV-group semiconductor such as silicon or germanium equivalent to the silicon as a basic constituent element on a substrate made of the silicon, and the like by a method capable of easily forming the silicon laser device by using a general silicon process, and a manufacturing method thereof. The silicon laser device is an ultrathin silicon laser that includes a first electrode unit injecting electrons, a second electrode unit injecting holes, a light emitting unit electrically connected to the first electrode unit and the second electrode unit, wherein the light emitting unit is made of single-crystal silicon and has a first surface (top surface) and a second surface (bottom surface) opposed to the first surface, a waveguide made of a first dielectric, which is disposed in the vicinity of the light emitting unit, by setting surface directions of the first and second surfaces as a surface (100) and thinning a thickness of the light emitting unit in a direction perpendicular to the first and second surfaces, and a mirror formed by alternately adjoining the first dielectric and a second dielectric.04-09-2009
20090294783Process to fabricate integrated mwir emitter - A device for medium wavelength infrared emission and a method for the manufacture thereof is provided. The device has a semiconductor substrate; a passive hermetic barrier disposed upon the substrate, and an emitter element disposed within said hermetic barrier; and a mirror.12-03-2009
20100181592Semiconductor Device and Method of Manufacturing Same - A FET is formed on a semiconductor substrate, a curved surface having a radius of curvature is formed on an upper end of an insulation, a portion of a first electrode is exposed corresponding to the curved surface to form an inclined surface, and a region defining a luminescent region is subjected to etching to expose the first electrode. Luminescence emitted from an organic chemical compound layer is reflected by the inclined surface of the first electrode to increase a total quantity of luminescence taken out in a certain direction.07-22-2010
20100193818Radiation-Emitting Device - A radiation-emitting device has a radiation-emitting component with a layer stack with an active region that is formed for the emission of electromagnetic radiation. A microstructure layer is mechanically coupled to the layer stack and has elevations that extend away from the layer stack. A protective layer has a planar side facing away from the microstructure layer and is arranged on a side of the microstructure layer facing away from the layer stack.08-05-2010
20100187550LIGHT EMITTING DIODE - In a preferred embodiment, a light emitting device comprising: a polar template; a p-type layer grown on the polar template; the p-type layer having a first polarization vector; the first polarization vector having a first projection relative to a growth direction; an n-type layer grown on the p-type layer; the n-type layer having a second polarization vector; the second polarization vector having a second projection relative to said growth direction that is larger than the first projection of the first polarization vector for the p-type layer; the n-type layer and p-type layer forming an interface; whereby the first polarization vector in the p-layer and second polarization vector in the n-layer create a discontinuity at the interface resulting in a negative charge appearing at the interface. In another preferred embodiment, a light emitting device comprising: a polar template; a n-type layer grown on the template; the n-type layer having a first polarization vector; the first polarization vector having a first projection relative to a growth direction; an p-type layer grown on the n-type layer; the p-type layer having a second polarization vector; the second polarization vector having a second projection relative to said growth direction that is larger than the first projection of the first polarization vector for the p-type layer; the n-type layer and p-type layer forming an interface; whereby the first polarization vector in the p-layer and second polarization vector in the n-layer create a discontinuity at the interface resulting in a negative charge appearing at the interface.07-29-2010
20100193813LIGHT-EMITTING DIODE - The invention discloses a light-emitting diode comprising a substrate, a primary stack structure, a secondary stack structure, a transparent insulating material and a transparent conducting layer in an embodiment. Each of the primary and the secondary stack structure has a first conducting-type semiconductor layer, an illuminating layer, and a second conducting-type semiconductor layer sequentially formed on the substrate, wherein plural pillar-like holes are formed at the top surface of the second conducting-type semiconductor layer of the secondary stack structure and protrude into the first conducting-type semiconductor layer of the secondary stack structure. The transparent insulating material is filled into the holes. The transparent conducting layer is coated on the primary stack structure, the transparent insulating material, and the top surface of the second conducting-type semiconductor layer of the secondary stack structure.08-05-2010
20120032214SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a light emitting portion, a first transparent conductive layer, and a second transparent conductive layer. The light emitting portion is provided between the first and second semiconductor layers. The second semiconductor layer is disposed between the first transparent conductive layer and the light emitting portion. The first transparent conductive layer includes oxygen. The second transparent conductive layer is provided between the second semiconductor layer and the first transparent conductive layer. The second transparent conductive layer has a refractive index higher than a refractive index of the first transparent conductive layer, and includes oxygen at a concentration higher than a concentration of oxygen included in the first transparent conductive layer.02-09-2012
20120032213SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor light emitting device includes a stacked structural body, a first, a second and a third conductive layer. The stacked structural body includes first and second semiconductors and a light emitting layer provided therebetween. The second semiconductor layer is disposed between the first conductive layer and the light emitting layer. The first conductive layer is transparent. The first conductive layer has a first major surface on a side opposite to the second semiconductor layer. The second conductive layer is in contact with the first major surface. The third conductive layer is in contact with the first major surface and has a reflectance higher than a reflectance of the second conductive layer. The third conductive layer includes an extending part extending in parallel to the first major surface. At least a portion of the extending part is not covered by the second conductive layer.02-09-2012
20120032221ORGANIC LIGHT EMITTING DIODE AND METHOD FOR PRODUCING AN ORGANIC LIGHT EMITTING DIODE - An organic light-emitting diode includes an organic light-emitting layer located between a transparent electrode and one other electrode on a substrate. In some embodiments at least one of the transparent electrode and the other electrode has two layers. The two layers include a structured layer, which is a charge carrier injection layer, and a conductive second layer into which the first layer is embedded. In some embodiments the organic light-emitting layer includes a structured charge carrier blocking layer.02-09-2012
20100176407METHOD FOR MANUFACTURING LIGHT EMITTING DIODE PACKAGE AND PACKAGE STRUCTURE THEREOF - The present invention relates to a method for forming a package structure for a light emitting diode (LED) and the LED package structure thereof. By employing the same sawing process to cut through the trenches of the leadframe, the package units are singulated and different lead portions are simultaneously separated from each other in each package unit. Therefore, the overflow issues of the encapsulant can be avoided without using extra taping process.07-15-2010
20130214311LIGHT-EMITTING DEVICE - Disclosed is a light-emitting device (08-22-2013
20130214312SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a semiconductor light emitting device, includes forming a conductive film on a surface of a semiconductor light emitting element. Phosphor particles are charged by mixing phosphor particles with an electrolyte having a metallic salt dissolved therein. The semiconductor light emitting element having the conductive film formed thereon is immersed in the electrolyte having the charged phosphor particles. A phosphor layer on the conductive film is formed by electrophoresing the phosphor particles. The conductive film is removed using wet etching.08-22-2013
20130214313DIFFUSER FOR LED LIGHT SOURCES - An LED light source is described. The light source includes an LED and a diffuser. The LED emits a light having a dominant wavelength. The diffuser includes a filler material, which includes particles. The mean diameter of the particles is at least as large as the dominant wavelength of the light emitted by the LED. The particles are configured to scatter the light emitted by the LED.08-22-2013
20130214314LIGHT-EMITTING MATERIAL OF NITROGEN COMPOUND, PREPARATION PROCESS THEREOF AND ILLUMINATION SOURCE MANUFACTURED THEREFROM - A nitrogen compound luminescent material belongs to the field of LED inorganic luminescent materials. The nitrogen compound luminescent material has a chemical formula: M08-22-2013
20100193823NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.08-05-2010
20100193815Method for the Manufacture of an Optoelectronic Component and an Optoelectronic Component - A method is disclosed for the manufacture of an optoelectronic component. A substrate has a first primary face and a second primary face that lies opposite the first primary face. A semiconductor body that is capable of emitting electromagnetic radiation from a front side is attached to the first primary face of the substrate. A covering that is transparent to the radiation from the optoelectronic semiconductor body is applied to at least the front side of the semiconductor body. The covering is given the form of an optical element by using a closed cavity that is shaped with the contour of the optical element.08-05-2010
20100193809LIGHT EMITTING DIODE STRUCTURE, LED PACKAGING STRUCTURE USING THE SAME AND METHOD OF FORMING THE SAME - A light emitting diode (LED) structure, a LED packaging structure, and a method of forming LED structure are disclosed. The LED structure includes a sub-mount, a stacked structure, an electrode, an isolation layer and a conductive thin film layer. The sub-mount has a first surface and a second surface opposite the first surface. The stacked structure has a first semiconductor layer, an active layer and a second semiconductor layer that are laminated on the first surface. The electrode is disposed apart from the stacked structure on the first surface. The isolation layer is disposed on the first surface to surround the stacked structure as well as cover the lateral sides of the active layer. The conductive thin film layer connects the electrode to the stacked structure and covers the stacked structure.08-05-2010
20090078957LIGHT EMITTING DEVICE - A light emitting device includes a board, a semiconductor light emitting element formed on the board optionally via a submount, a cap sealing the semiconductor light emitting element and a reflector provided surrounding the cap. The cap has top and bottom surfaces that are parallel to the top surface of the semiconductor light emitting element, and the spacing between the top and bottom surfaces is 1-3 times the longest diagonal or the diameter of the semiconductor light emitting element. Also disclosed is a process for producing the device.03-26-2009
201001938242-TERMINAL SEMICONDUCTOR DEVICE USING ABRUPT METAL-INSULATOR TRANSITION SEMICONDUCTOR MATERIAL - Provided is a 2-terminal semiconductor device that uses an abrupt MIT semiconductor material layer. The 2-terminal semiconductor device includes a first electrode layer, an abrupt MIT semiconductor organic or inorganic material layer having an energy gap less than 2 eV and holes in a hole level disposed on the first electrode layer, and a second electrode layer disposed on the abrupt MIT semiconductor organic or inorganic material layer. An abrupt MIT is generated in the abrupt MIT semiconductor material layer by a field applied between the first electrode layer and the second electrode layer.08-05-2010
20090078954SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed is a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises a first conductive semiconductor layer comprising a first concave-convex pattern, a second concave-convex pattern on at least one pattern of the first concave-convex pattern, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer.03-26-2009
20090078952LIGHT-EMITTING CHIP DEVICE WITH HIGH THERMAL CONDUCTIVITY - This invention provides a light-emitting chip device with high thermal conductivity, which includes an epitaxial chip, an electrode disposed on a top surface of the epitaxial chip and a U-shaped electrode base cooperating with the electrode to provide electric energy to the epitaxial chip for generating light by electric-optical effect. The epitaxial chip includes a substrate and an epitaxial-layer structure with a roughening top surface and a roughening bottom surface for improving light extracted out of the epitaxial chip. A thermal conductive transparent reflective layer is formed between the substrate and the epitaxial-layer structure. The electrode base surrounds the substrate, the transparent reflective layer and a first cladding layer of the epitaxial-layer structure to facilitate the dissipation of the internal waste heat generated when the epitaxial chip emitting light. A method for manufacturing the chip device of the present invention is provided.03-26-2009
20090078953LIGHT EMITTING DIODE PACKAGE STRUCTURE - The present invention provides a light emitting diode (LED) package, which includes a carrier substrate having a first surface and a second surface; a metal layer formed in the first surface of the carrier substrate, and a through hole formed in the central area of the metal layer to expose the portion of the first surface of the carrier substrate; a LED having a semiconductor layer capable of light emitting, and an N electrode and a P electrode on the two sides of the semiconductor layer, in which P electrode is electrically connected to the first surface of the metal layer; a first connecting element is electrically connected to the metal layer; a second connecting element is electrically connected to the N electrode; and an encapsulated material is formed to cover the LED, the metal layer, the exposed first connecting element and the second connecting element.03-26-2009
20090078951GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE - An object of the present invention is to provide a gallium nitride-based compound semiconductor light-emitting device having a reflective positive electrode configured to achieve excellent light extraction efficiency.03-26-2009
20090078948ILLUMINATOR AND METHOD FOR PRODUCING SUCH ILLUMINATOR - The present invention relates to an illuminator (03-26-2009
20090078949LIGHT EMITTING DEVICE WITH CONVERSION STRUCTURE - The invention relates to a light-emitting device comprising a conversion structure and one or several LEDs (03-26-2009
20090189172Light emitting diode with higher illumination efficiency - A light emitting diode (LED) with higher illumination efficiency is revealed. The LED includes a LED chip and an optical layer arranged on the bottom of the LED chip. The optical layer is a light-guiding layer, a light reflective layer or an energy-conversion layer that increases light emitting efficiency of the LED. Furthermore, a rough layer is disposed between the LED chip and the optical layer so as to increase surface area of the LED chip. Thus light emitted from the LED chip enters the optical layer more easily and the illumination efficiency of the LED is increased.07-30-2009
20100187556Light Emitting Device Package And Method For Manufacturing The Same - A light emitting device package capable of emitting uniform white light and a method for manufacturing the same are disclosed. The light emitting device package includes a package body, an electrode formed on at least one surface of the package body, a light emitting device mounted on the package body, and a phosphor layer enclosing the light emitting device while having a uniform thickness around the light emitting device.07-29-2010
20100187553LIGHT EMITTING DIODE PACKAGE STRUCTURE AND METHOD THEREOF - An LED package structure includes a carrier substrate, a reflector and an LED chip. The reflector is disposed on the carrier substrate and includes a base, a magnesium fluoride layer and a cerium dioxide layer. The base has an opening to expose a part of the carrier substrate. The magnesium fluoride layer is disposed on the inside wall of the opening and the cerium dioxide layer is disposed on the magnesium fluoride layer. The LED chip is disposed in the opening and located on the carrier substrate.07-29-2010
20100187551LIGLIGHT EMITTING DIODE PACKAGE STRUCTURE - An LED package structure includes a carrier, a housing, an LED chip, a encapsulant and a surface treatment layer. The housing is disposed on the carrier and has an upper surface, wherein the housing and the carrier together form a chip-containing cavity. The LED chip is disposed on the carrier and located in the chip-containing cavity. The encapsulant is disposed in the chip-containing cavity and encapsulates the LED chip. The surface treatment layer is disposed on the upper surface of the housing to prevent the encapsulant from adhering to the upper surface of the housing.07-29-2010
20100258832SIDE EMITTING DEVICE WITH HYBRID TOP REFLECTOR - A side-emitting light emitting device (10-14-2010
20100258834VERTICAL LED WITH CURRENT GUIDING STRUCTURE - Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a metal alloy substrate) may be provided. For some embodiments, both a current guiding structure and second current path may be provided.10-14-2010
20100258830SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME - Light from a semiconductor light-emitting element travels in all directions. Thus, light that travels in the directions other than a lighting direction cannot be used effectively. Means for forming a semiconductor light-emitting element having tilted side surfaces, and forming a reflective layer on the tilted side surfaces has been proposed. However, since the tilted surfaces are formed by an etching method or the like, it takes a long time to form the tilted surfaces, and it is difficult to control the tilted surfaces. As a solution to these problems, semiconductor light-emitting elements are placed on a submount substrate and sealed with a sealant, and then a groove is formed in a portion between adjoining ones of the semiconductor light-emitting elements. The grooves formed are filled with a reflective material, and a light-emitting surface is polished. Then, the submount substrate is divided into individual semiconductor light-emitting devices. Thus, a semiconductor light-emitting device having a reflective layer on its side surfaces can be obtained.10-14-2010
20100258831SIDE EMITTING DEVICE WITH HYBRID TOP REFLECTOR - A side-emitting light emitting device (10-14-2010
20100258829METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT AND OPTOELECTRONIC COMPONENT - A method for producing an optoelectronic component including providing a radiation-emitting device, heating the device and applying a liquid lens material in a beam path of the device, wherein, with crosslinking of the lens material, a lens shaped onto the device is formed.10-14-2010
20100258833ORGANIC ELECTROLUMINESCENCE ELEMENT AND MANUFACTURING METHOD THEREOF - The organic electroluminescence element includes an anode metal layer above a substrate. The anode metal layer comprises an inner region and an outer region. The inner region is adjacent to and different than the outer region. An upper surface of the inner region is lower than an upper surface of the outer region. A metal oxide layer is on the inner region of the metal anode layer. A hole transport layer is above the metal oxide layer and the inner region. The hole transport layer comprises a hole-transporting organic material. An organic luminescent layer is above the hole transport layer and the inner region. A cathode layer is above the organic luminescent layer and the inner region. The cathode layer injects electrons into the organic luminescent layer. An insulating layer is above the outer region of the anode metal layer.10-14-2010
20100213490SEALING COMPOSITION FOR LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE INCLUDING THE SAME - According to an aspect of the present invention, there is provided a sealing composition for a light emitting device, the sealing composition including: a silicone/epoxy compound resin including a silicone resin having at least one silicon atom-bonded hydroxyl group and an epoxy resin having at least one oxirane group while the hydroxyl group of the silicone resin and the oxirane group of the epoxy resin are chemically bound to each other.08-26-2010
20100012959Optoelectronic Component - An optoelectronic component with a desired color impression in the switched-off state includes, in particular, a semiconductor layer sequence with an active region, that during operation radiates electromagnetic radiation with a first spectrum, and a wavelength conversion layer that is disposed downstream from the semiconductor layer sequence in the beam path of the electromagnetic radiation with the first spectrum, and that at least partially converts a subspectrum of the electromagnetic radiation with the first spectrum into electromagnetic radiation with a second spectrum, and a filter layer that reflects at least a part of the radiation incident from outside onto the optoelectronic component.01-21-2010
20100193814LIGHT-EMITTING DIODE - The invention discloses a light-emitting diode which includes a substrate on which a first conducting-type semiconductor layer, an illuminating layer and a second conducting-type semiconductor layer are formed sequentially, a transparent insulating material, a first transparent conducting layer, and a second transparent conducting layer. The top surface of the first conducting-type semiconductor layer includes a first region and a second region surrounded by the first region. Plural pillar-like holes are formed at the first region and protrude into the first conducting-type semiconductor layer. The transparent insulating material fills up the holes. The first transparent conducting layer is formed on the second conducting-type semiconductor layer, and the second transparent conducting layer is formed on the top surface of the transparent insulating material and on the first region.08-05-2010
20100193812LIGHT-EMITTING DIODE - The invention discloses a light-emitting diode which comprises a substrate, a first conducting-type semiconductor layer, plural pillars, a transparent insulating material, an illuminating layer, a second conducting-type semiconductor layer, a first transparent conducting layer and a second transparent conducting layer. The first conducting-type semiconductor layer is formed on the substrate, and the top surface of the first conducting-type semiconductor layer comprises a first region and a second region surrounded by the first region. The pillars are formed on the first region. The transparent insulating material is filled in the gaps between the pillars to be as high as the pillars. The illuminating layer is formed on the second region, and the second conducting-type semiconductor layer is formed on the illuminating layer. The first transparent conducting layer is formed on the second conducting-type semiconductor layer, and the second transparent conducting layer is formed on a top surface of the pillars and the transparent insulating material.08-05-2010
20100176411FLUORESCENT-LAMP-TYPE LED LIGHTING DEVICE - To provide a fluorescent-lamp-type LED lighting device that has a large amount of light intensity and that can replace a highly efficient existing lighting device, the fluorescent-lamp-type LED lighting device comprises an LED (07-15-2010
20100213482TOP EMISSION INVERTED ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A top emission inverted OLED device is disclosed. The a top emission inverted OLED device includes: first and second pad portions disposed on peripheral areas which correspond to outer sides of a light generation area on a metal substrate; at least one thin film transistor formed on the light generation area; a passivation layer formed to cover the thin film transistor on the metal substrate and include contact holes which partially expose the thin film transistor and the first and second pad portions; a stacked pattern of first and second conductive patterns formed on the passivation layer and configured to make contact with the exposed part of the thin film transistor through one of the contact holes; a cathode electrode formed on the light generation area and electrically connected to the second conductive pattern; an organic light emission layer disposed on the cathode electrode; an anode electrode disposed on the organic light emission layer and formed from a transparent metal material; and electrode patterns formed from the same material as the second conductive pattern on the rest of the contact holes which expose the first and second pad portions.08-26-2010
20100213494GaN COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME - The present invention relates to a gallium nitride (GaN) compound semiconductor light emitting element (LED) and a method of manufacturing the same. The present invention provides a vertical GaN LED capable of improving the characteristics of a horizontal LED by means of a metallic protective film layer and a metallic support layer. According to the present invention, a thick metallic protective film layer with a thickness of at least 10 microns is formed on the lateral and/or bottom sides of the vertical GaN LED to protect the element against external impact and to easily separate the chip. Further, a metallic substrate is used instead of a sapphire substrate to efficiently release the generated heat to the outside when the element is operated, so that the LED can be suitable for a high-power application and an element having improved optical output characteristics can also be manufactured. A metallic support layer is formed to protect the element from being distorted or damaged due to impact. Furthermore, a P-type electrode is partially formed on a P-GaN layer in a mesh form to thereby maximize the emission of photons generated in the active layer toward the N-GaN layer.08-26-2010
20100213488LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM INCLUDING THE SAME - Provided are a light emitting device, a light emitting device package and a lighting system comprising the same. The light emitting device comprises a light emitting structure comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, and an anti-reflection region on a lateral surface of the light emitting structure.08-26-2010
20100176414PACKAGING STRUCTURE OF LIGHT-EMITTING COMPONENTS - The present invention provides a packaging structure of light-emitting components, comprising at least a light-emitting component, at least a connection wire, a base, at least a reflection surface, and an insulator, and characterized in that: the light-emitting component produces a light source and corresponding heat energy; the connection wire is coupled to the light-emitting component and at least an electrode; the electrode is disposed on the base; the light-emitting component is disposed on the base; the light-emitting component includes a heat-conducting base; the reflection surface reflects the light source produced by the light emitting component; the insulator insulates the electrode from the reflection surface; and the reflection surface is formed integrally with the heat-conducting base.07-15-2010
20100176415LIGHT EMITTING DEVICE WITH IMPROVED LIGHT EXTRACTION EFFICIENCY - A light emitting device having a high degree of light extraction efficiency includes a substrate, and a light emitting structure disposed on one surface of the substrate, the substrate having an internal reformed region where the index of refraction differs from the remainder the substrate. The ratio of the depth of the reformed region (distance between the other surface of the substrate and the reformed region) to the thickness of the substrate is in a range of between 1/8 and 9/11.07-15-2010
20100176416LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A light emitting device and a method of manufacturing the same are disclosed. The light emitting device includes a buffer layer formed on a substrate, a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked on the buffer layer, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one nanocone formed on the second semiconductor layer.07-15-2010
20100176408LIGHT-EMITTING DIODE WITH HIGH LIGHTING EFFICIENCY - The invention discloses a light-emitting diode, including a substrate, a first conductive type semiconductor layer, a second conductive type semiconductor layer, a light-emitting layer and plural laminated structures. The first conductive type semiconductor layer, the light-emitting layer and the second conductive type semiconductor layer are formed on the substrate in sequence. The plural laminated structures are formed on the upper surface of the second conductive type semiconductor layer such that the upper surface is partially exposed. Each laminated structure consists of at least one first insulated layer with a high refractive index and at least one second insulated layer with a low refractive index, where the at least one first insulated layer and the at least one second insulated layer are alternately formed to obtain said each laminated structure. Thereby, light emitted from the light-emitting layer can be reflected by the laminated structures to enhance the light-extraction efficiency.07-15-2010
20100176410SEMICONDUCTOR LIGHT EMITTING DEVICE - A wiring electrode is provided on a mount substrate. A light emitting element is provided on the wiring electrode to connect electrically with the wiring electrode and is configured to emit a blue to ultraviolet light. A reflective film is provided above the light emitting element to cover the light emitting element so that a space is interposed between the reflective film and the light emitting element. The reflective film is capable of transmitting the blue to ultraviolet light. A fluorescent material layer is provided above the light emitting element to cover the light emitting element so that the reflective film is located between the fluorescent material layer and the light emitting element. A light from the fluorescent material layer is reflected by the reflective film.07-15-2010
20100176412ORGANIC EL DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic EL device includes an insulative film, a first pixel electrode and a second pixel electrode which are disposed on the insulative film, a first light emission layer which is commonly disposed above the first pixel electrode and the second pixel electrode, a second light emission layer which is disposed above the first light emission layer, a counter-electrode which is disposed above the second light emission layer, and an exciton block layer which is disposed between the first light emission layer and the second light emission layer.07-15-2010
20100176409WHITE OR ULTRAVIOLET LEDS CONTAINING A GETTER SYSTEM07-15-2010
20100193821OPTICAL ELEMENT PACKAGE AND METHOD OF MANUFACTURING THE SAME - An optical element package includes: an optical element in a form of a chip, and a lens resin having a convex lens surface covering an optical functional surface of the optical element. The convex lens surface is formed as a rough surface having a plurality of minute convex curved surfaces having a vertex in a direction perpendicular to a plane in contact with each part of the convex lens surface.08-05-2010
20100193822LIGHT EMITTING SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF - The light emitting device has a substrate, metallization including silver established on the surface of the substrate, a light emitting element mounted on the substrate, conducting wire that electrically connects the metallization and the light emitting element, light reflective resin provided on the substrate to reflect light from the light emitting element, and insulating material that covers at least part of the metallization surfaces. The insulating material is established to come in contact with the side of the light emitting element. This arrangement can suppress the leakage of light emitting element light from the substrate, and can achieve a light emitting device with high light extraction efficiency.08-05-2010
20100193816LIGHT EMITTING DIODE PACKAGE AND FABRICATION METHOD THEREOF - A light emitting diode package and a fabrication method thereof are provided. The light emitting diode package comprises a lead frame, having a frame body and a conductive layer covering the frame body. A reflector has a first portion and a second portion sandwiching the lead frame, wherein the first portion has a depression to expose the lead frame, and a light emitting diode chip is disposed on the lead frame in the depression. The fabrication method comprises forming a frame body and forming a conductive layer covering the frame body to form a lead frame. A first portion and a second portion of a reflector are formed to sandwich the lead frame, wherein the first portion has a depression to expose the lead frame. A light emitting diode chip is disposed on the lead frame in the depression.08-05-2010
20100193820ORGANIC ELECTROLUMINESCENCE DEVICE AND LUMINESCENCE APPARATUS - The invention provides an organic EL device including an anode, a cathode, and a luminescent portion positioned between the anode and cathode, the luminescent portion including two or more luminescent layers, each of the luminescent layers including plural primary luminescent layers that emit light of different colors, and each of the primary luminescent layers having a thickness of 5 nm or less.08-05-2010
20100193817ORGANIC ELECTROLUMINESCENT ELEMENT AND METHOD FOR MANUFACTURING THE SAME - The present invention provides an organic electroluminescence (EL) element that suppresses leakage current flowing between an upper electrode and an under electrode through an organic layer. The organic EL element (08-05-2010
20090014742PATTERNED LIGHT EMITTING DEVICES - Light-emitting devices, and related components, systems and methods are disclosed. A light-emitting device can include a multi-layer stack of materials that includes a light-generating region and a first layer supported by the light-generating region. During use of the light-emitting device, light generated by the light-generating region can emerge from the light-emitting device via a surface of the first layer. The surface of the first layer can have a dielectric function that varies spatially as a pattern and at least about 45% of a total amount of light generated by the light-generating region can emerge from the light-emitting device emerges via the surface of the light-emitting device.01-15-2009
20100224898OPTICAL SEMICONDUCTOR DEVICE HAVING AIR GAP FORMING REFLECTIVE MIRROR AND ITS MANUFACTURING METHOD - In an optical semiconductor device including an epitaxially-grown light emitting semiconductor layer and a reflective electrode layer provided at a counter face of the light emitting semiconductor layer opposing a light extracting face thereof, a support electrode layer is provided between the reflective electrode layer and the counter face of the light emitting semiconductor layer and is adapted to support the light emitting semiconductor layer and electrically connect the light emitting semiconductor layer to the reflective electrode layer. Also, a total area of the support electrode layer is smaller than an area of the reflective electrode layer. Further, an air gap at a periphery of the support electrode layer and the reflective electrode layer serves as a reflective mirror.09-09-2010
20100224894III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME - The present disclosure relates to a III-nitride semiconductor light emitting device, including: a substrate; a plurality of III-nitride semiconductor layers grown over the substrate and including an active layer generating light by recombination of electrons and holes; a scattering surface provided on the substrate to scatter the light generated in the active layer; and a sub-scattering portion ruggedly formed on the scattering surface.09-09-2010
20100224893Method for Arranging a Powder Layer on a Substrate and Layer Structure with at least One Powder Layer on a Substrate - A process for arranging a powder layer comprising a powder on a substrate surface of a substrate. A substrate having a substrate surface is provided, and a mixture comprising the powder and an adhesion promoter is applied on the substrate surface. The adhesion promoter is removed and the powder layer is fixed on the substrate surface.09-09-2010
20110175129LIGHT EMITTING DEVICE HAVING A PLURALILTY OF LIGHT EMITTING CELLS AND PACKAGE MOUNTING THE SAME - Disclosed is a light emitting device having a plurality of light emitting cells and a package having the same mounted thereon. The light emitting device includes a plurality of light emitting cells which are formed on a substrate and each of which has an N-type semiconductor layer and a P-type semiconductor layer located on a portion of the N-type semiconductor layer. The plurality of light emitting cells are bonded to a submount substrate. Accordingly, heat generated from the light emitting cells can be easily dissipated, so that a thermal load on the light emitting device can be reduced. Meanwhile, since the plurality of light emitting cells are electrically connected using connection electrodes or electrode layers formed on the submount substrate, it is possible to provide light emitting cell arrays connected to each other in series. Further, it is possible to provide a light emitting device capable of being directly driven by an AC power source by connecting the serially connected light emitting cell arrays in reverse parallel to each other.07-21-2011
20100207154LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM INCLUDING THE SAME - Provided are a light emitting device package and a lighting system comprising the same. The light emitting device package comprises a package body having a trench, a metal layer within the trench, and a light emitting device over the metal layer.08-19-2010
20120138984Semiconductor light emitting element - A semiconductor light emitting element includes a semiconductor multilayer structure including a first conductive type layer, a second conductive type layer, and a light emitting layer sandwiched between the first conductive type layer and the second conductive type layer, and a reflecting layer formed on the second conductive type layer for reflecting the light emitted from the light emitting layer. The light is extracted in a direction from the light emitting layer toward the first conductive type layer. The first conductive type layer includes a concavo-convex region on a surface thereof not opposite to the light emitting layer, for changing a path of light, and at least a part of the reflecting layer is formed extending to right above an edge of the concavo-convex region.06-07-2012
20100155753PHOSPHOR, LIGHT EMITTING DEVICE AND WHITE LIGHT EMITTING DIODE - The present invention provides a phosphor, a lighting system and a white light emitting diode. The phosphor comprises a compound represented by the formula (1) and Eu as an activator. aM06-24-2010
20090294789LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING LIGHT EMITTING DEVICE - A light emitting device includes a light emitting element emitting light, a first substrate on which the light emitting element is mounted, a second substrate forming a sealing space for the light emitting element between the first substrate and the second substrate and a light exiting window for allowing light emitted from the light emitting element to exit, in which at least one of the first substrate and the second substrate has cleavage characteristics and a cleavage plane thereof serves as a window attaching surface to which the light exiting window is attached.12-03-2009
20100230707LIGHT-EMITTING DIODE PACKAGE AND MANUFACTURING METHOD THEREOF - An LED package is provided. The LED package comprises a metal plate, circuit patterns, and an LED. The metal plate comprises grooves. The insulating layer is formed on the metal plate. The circuit patterns are formed on the insulating layer. The LED is electrically connected with the circuit pattern on the insulating layer.09-16-2010
20100237374Transparent Organic Light Emitting Diode Lighting Device - Provided is a transparent organic light emitting diode (OLED) lighting device in which opaque metal reflectors are formed to adjust light emitting directions. The transparent OLED lighting device includes a transparent substrate, a transparent anode formed on a predetermined region of the transparent substrate, a reflective anode formed adjacent to the transparent anode on another region of the transparent substrate, an organic layer formed on the transparent and reflective anodes, and a transparent cathode and an encapsulation substrate sequentially stacked on the organic layer. Directions of light emitted from the organic layer vary depending on the current applied to the transparent and reflective anodes.09-23-2010
20100230700LIGHT EMITTING DEVICE PACKAGE - A light emitting device package is provided. The light emitting device package may include a package body having a cavity formed therein, a lead frame, and a light emitting device positioned in the cavity and electrically connected to the lead frame. The lead frame may penetrate the package body such that one end of the lead frame is positioned in the cavity and the other end of the lead frame is exposed to an outside of the package body. The lead frame may be partially coated with a thin metal layer.09-16-2010
20100224895LIGHT EMITTING DEVICE - A light emitting device that has excellent color rendering performance is provided.09-09-2010
20100224901SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device includes an n-type semiconductor layer formed on a substrate, a light-emitting layer formed on the n-type semiconductor layer, a p-type semiconductor layer formed on the light-emitting layer, and an electrode layer formed on the p-type semiconductor layer. A through hole is formed in the electrode layer and filled with a dielectric layer. The dielectric layer is composed of a dielectric material having a dielectric constant such that the wavelength λ09-09-2010
20100276720Light Emitting Device Structure and Process for Fabrication Thereof - A light emitting device structure, wherein the emitter layer structure comprises one or more device wells defined by thick field oxide regions, and a method of fabrication thereof are provided. Preferably, by defining device well regions after depositing the emitter layer structure, emitter layer structures with reduced topography may be provided, facilitating processing and improving layer to layer uniformity. The method is particularly applicable to multilayer emitter layer structures, e.g. comprising a layer stack of active layer/drift layer pairs. Preferably, active layers comprise a rare earth oxide, or rare earth doped dielectric such as silicon dioxide, silicon nitride, or silicon oxynitride, and respective drift layers comprise a suitable dielectric, preferably silicon dioxide, of an appropriate thickness to control excitation energy. Pixellated light emitting structures, or large area, high brightness emitter layer structures, e.g. for solid-state lighting applications, may therefore be provided with improved process flexibility and reliability.11-04-2010
20100276716LIGHT EMITTING DIODE COATING METHOD - Provided is a light emitting diode (hereinafter, referred to as an LED) coating method, and more particularly, an LED coating method that can be used to coat a phosphor, a molding, etc., on an LED.11-04-2010
20100276715LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM INCLUDING THE SAME - A light emitting device including a second conductive type semiconductor layer; an active layer over the second conductive type semiconductor layer; a first conductive type semiconductor layer over the active layer; a second electrode in a first region under the second conductive type semiconductor layer; a current blocking layer including a metal; and a first electrode over the first conductive type semiconductor layer. Further, the first electrode has at least one portion that vertically overlaps the current blocking layer.11-04-2010
20100276713LED DEVICE AND PACKAGING METHOD THEREOF - A LED device includes a base structure having a receiving space, a light-emitting chip, an encapsulating structure, and a phosphor layer. The receiving space is defined by an inner bottom surface of the base structure and an inner side wall surrounding the inner bottom surface. The light-emitting chip is mounted on the bottom of the receiving space. The encapsulating structure is filled into the receiving space to cover the light-emitting chip. The phosphor layer is formed on the encapsulating structure. The dimension of the phosphor layer is more than the dimension of the receiving space and less than 1.5 times that of the receiving space, so as to mount on the top surface of the base structure.11-04-2010
20100213481LIGHT EMITTING DEVICE - A light emitting device including a light emitting structure having a first conductive semiconductor layer, an active layer disposed under the active layer and a second conductive semiconductor layer disposed under the active layer; a trench formed in a portion of the light emitting structure; a current barrier layer in the trench and configured to hinder current supply to the active layer at a portion where the trench is located and to block the active layer over the trench from emitting light; and a first electrode on the first conductive semiconductor layer above the portion where the trench is located.08-26-2010
20100213484Lead frame assembly, package structure and LED package structure - A package structure is adapted for mounting at least one light emitting diode (LED) die. The package structure includes an insulating housing having a top surface that is formed with a cavity, and a lead frame unit. The lead frame unit includes a first lead frame portion and a second lead frame portion. The first lead frame portion is covered by the insulating housing, and has a die-bonding area exposed within the cavity and adapted for mounting the LED die. The second lead frame portion is covered by the insulating housing, and has a conductive surface exposed outwardly of the top surface of the insulating housing and adapted for electrical connection with an end of a conductive wire.08-26-2010
20100213483ILLUMINATION DEVICE - An illumination device having a plurality of light emitting diodes is provided. The light emitting diode may include a plurality of semiconductor layers at least one of which has a light emitting surface which may include a rough surface pattern having a pre-determined pattern. The pre-determined pattern may include one or more impurity regions with each region having a plurality of peaks and valleys for directing the flow of current and causing an increase in the emission of light to reflect outwards from the light emitting surface while decreasing light reflected into the light emitting surface and as a result reducing the dissipation of heat. The plurality of impurity regions may be arranged such that a checkered pattern or configuration is formed by alternating the direction of the peaks and valleys in each region.08-26-2010
20100213480LENS FOR LIGHT EMITTING DIODE PACKAGE AND LIGHT EMITTING DIODE PACKAGE HAVING THE SAME - A lens for a light emitting diode package and a light emitting diode package having the same have simple structures and increase light extraction efficiency by preventing light emitted from a light emitting diode chip from being internally reflected by a lens surface through a structural change in the lens surface.08-26-2010
20100213493LIGHT-EMITTING DEVICE - A light-emitting device including: a light-emitting stacked layer having first conductivity type semiconductor layer, a light-emitting layer formed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer formed on the light-emitting layer, wherein the upper surface of the second conductivity type semiconductor layer is a textured surface; a first planarization layer formed on a first partial of the upper surface of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first planarization layer and a second partial of the second conductivity type semiconductor layer, including a first portion in contact with the first planarization layer and a second portion having a first plurality of cavities in contact with the second conductivity type semiconductor layer; and a first electrode formed on the first portion of the first transparent conductive oxide layer.08-26-2010
20100213491LIGHT-EMITTING DEVICE WITH NARROW DOMINANT WAVELENGTH DISTRIBUTION AND METHOD OF MAKING THE SAME - This application discloses a light-emitting device with narrow dominant wavelength distribution and a method of making the same. The light-emitting device with narrow dominant wavelength distribution at least includes a substrate, a plurality of light-emitting stacked layers on the substrate, and a plurality of wavelength transforming layers on the light-emitting stacked layers, wherein the light-emitting stacked layer emits a first light with a first dominant wavelength variation; the wavelength transforming layer absorbs the first light and converts the first light into the second light with a second dominant wavelength variation; and the first dominant wavelength variation is larger than the second dominant wavelength variation.08-26-2010
20100213492Light Emitting Device and Method of Manufacturing the Same - A light emitting device for generating infrared light includes a substrate, a first metal layer, a dielectric layer and a second metal layer. The substrate has a first surface. The first metal layer is formed on the first surface of the substrate. The dielectric layer is formed on the first metal layer. A thickness of the dielectric layer is greater than a particular value. The second metal layer is formed on the dielectric layer. When the light emitting device is heated, the dielectric layer has a waveguide mode such that the infrared light generated by the light emitting device can be transmitted in the dielectric layer. A wavelength of the infrared light generated in the waveguide mode relates to the thickness of the dielectric layer.08-26-2010
20100213486TRANSPARENT HEAT SPREADER FOR LEDS - A heat spreader for an LED can include a thermally conductive and optically transparent member. The bottom side of the heat spreader can be configured to attach to a light emitting side of the LED. The top and/or bottom surface of the heat spreader can have a phosphor layer formed thereon. The heat spreader can be configured to conduct heat from the LED to a package. The heat spreader can be configured to conduct heat from the phosphors to the package. By facilitating the removal of heat from the LED and phosphors, more current can be used to drive the LED. The use of more current facilitates the construction of a brighter LED, which can be used in applications such as flashlights, displays, and general illumination. By facilitating the removal of heat from the phosphors, desired colors can be better provided.08-26-2010
20100213489PHOSPHOR AND LIGHT EMITTING DEVICE - A phosphor and a light emitting device containing the phosphor are provided. According to an embodiment, the phosphor is expressed in a chemical formula of L08-26-2010
20100213487SIDE-EMITTING LED PACKAGE AND MANUFACTURING METHOD OF THE SAME - A side-emitting LED includes a substrate formed with a plurality of electrodes, an LED chip bonded onto the substrate and electrically connected to the electrodes, a transparent member encapsulating the LED chip and a casing fixed on the substrate. The transparent member has a flat bottom surface attached to the substrate, a vertically surface extending perpendicularly from a straight side edge of the flat bottom surface and a curved surface connected to curved edges of the flat bottom and vertical surfaces. The casing encapsulates the transparent member excepting the vertical surface of the transparent member. The curved surface of the transparent member is shaped as a part of an outer surface of an ellipsoid.08-26-2010
20100213495ELECTRODE STRUCTURES FOR LEDS WITH INCREASED ACTIVE AREA - An electrode structure is disclosed for enhancing the brightness and/or efficiency of an LED. The electrode structure can have a metal electrode and an optically transmissive thick dielectric material formed intermediate the electrode and a light emitting semiconductor material. The electrode and the thick dielectric cooperate to reflect light from the semiconductor material back into the semiconductor so as to enhance the likelihood of the light ultimately being transmitted from the semiconductor material. Such LED can have enhanced utility and can be suitable for uses such as general illumination. The semiconductor material can have a cutout formed therein and a portion of the electrode can be formed outside of the cutout and a portion of the electrode can be formed inside of the cutout. The portion of the electrode outside the cutout can be electrically isolated from the semiconductor material by the dielectric material.08-26-2010
20100148203SEMICONDUCTOR LIGHT-EMITTING DEVICE - There is provided a semiconductor light-emitting device including a semiconductor light-emitting element, a phosphor layer disposed in a light path of a light emitted from the semiconductor light-emitting element, containing a phosphor to be excited by the light and having a cross-section in a region of a diameter which is 1 mm larger than that of a cross-section of the light path, and a heat-releasing member disposed in contact with at least a portion of the phosphor layer and exhibiting a higher thermal conductance than that of the phosphor layer.06-17-2010
20100252849Light-emitting element - A light-emitting element includes a semiconductor substrate, a light emitting layer portion including an active layer on the semiconductor substrate, a first reflective layer between the semiconductor substrate and the active layer for reflecting light emitted from the active layer; and a second reflective layer between the semiconductor substrate and the first reflective layer for reflecting light with a wavelength different from that of the light reflected by the first reflective layer. The second reflective layer reflects light with a wavelength longer than that of the light reflected by the first reflective layer.10-07-2010
20100252851LED PACKAGE WITH INCREASED FEATURE SIZES - A light emitter package having increased feature sizes for improved luminous flux and efficacy. An emitter chip is disposed on a submount with a lens that covers the emitter chip. In some cases, the ratio of the width of the light emitter chip to the width of said lens in a given direction is 0.5 or greater. Increased feature sizes allow the package to emit light more efficiently. Some packages include submounts having dimensions greater than 3.5 mm square used in conjunction with larger emitter chips. Materials having higher thermal conductivities are used to fabricate the submounts, providing the package with better thermal management.10-07-2010
20100224897SEMICONDUCTOR OPTOELECTRONIC DEVICE AND METHOD FOR FORMING THE SAME - A semiconductor optoelectronic device with enhanced light extraction efficiency includes at least one protrusion structure, which can be formed around a light-emitting region of the device. The at least one protrusion structure can include a plurality of protrusion structures in one embodiment. In addition, a fabricating method for forming a semiconductor optoelectronic device with enhanced light extraction efficiency is provided in the present invention.09-09-2010
20100224896LIGHT EMITTING DEVICE COMPRISING A COMPOSITE SIALON-BASED CERAMIC MATERIAL - The invention relates to a light emitting device, especially a LED with a ceramic composite material essentially of the composition M09-09-2010
20100224900SEMICONDUCTOR OPTOELECTRONIC DEVICE AND METHOD FOR MAKING THE SAME - A semiconductor optoelectronic device with enhanced light extraction efficiency includes a major luminescent area and a secondary luminescent area, wherein the major luminescent area is surrounded by a secondary luminescent area. The secondary luminescent area not only can improve the light extraction efficiency of the major luminescent area, but per se also can luminesce. In addition, one embodiment of the present invention provides a fabricating method for forming the secondary luminescent area.09-09-2010
20100237377LIGHT EMITTING DIODE PACKAGE AND METHOD OF MANUFACTURING THE SAME - A light emitting diode (LED) package is provided. According to an embodiment, a light emitting apparatus includes a substrate; at least two distinct electrodes on the substrate; a light emitting device on one of the at least two distinct electrodes, wherein the at least two distinct electrodes are electrically separated from each other and spaced from each other; a guide unit on the substrate and around the light emitting device, wherein the guide unit includes an inner side surface, an outer side surface, a top surface and a bottom surface; and lenses including a first lens and a second lens on the substrate, wherein at least one of the lenses includes a convex shape and a portion of the at least one of the lenses is located higher than the top surface of the guide unit.09-23-2010
20100237370LIGHT EMITTING DEVICE PACKAGE - Embodiments relate to a light emitting device package. The light emitting device package comprises: a body comprising a multilayer cavity; a light emitting device in the cavity; a first phosphor layer sealing the light emitting device and comprising a first phosphor; and a second phosphor layer comprising a second phosphor on the first phosphor layer, the second phosphor and the first phosphor having a difference in the specific gravity.09-23-2010
20100237372LIGHT EMITTING DEVICE - A light emitting device including a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a first photonic crystal structure on the light emitting structure; a lower encapsulant on the first photonic crystal structure; and a second photonic crystal structure on the lower encapsulant.09-23-2010
20100001301ORGANIC LIGHT EMITTING DEVICE, METHOD FOR PRODUCING THEREOF AND ARRAY OF ORGANIC LIGHT EMITTING DEVICES - The present invention is directed to an organic light emitting device (OLED) including a first electrode, a second electrode, at least one layer of organic material arranged between the first electrode and the second electrode, and a dielectric capping layer arranged on the second electrode opposite to the first electrode, wherein the capping layer comprises an outer surface, opposite to the second electrode, for emission of light generated in the at least one layer of organic material. The capping layer has the effect that a reflectance of external light is reduced whereas outcoupling of the light generated in the at least one layer of organic material through the capping layer is increased.01-07-2010
20090057699LED with Particles in Encapsulant for Increased Light Extraction and Non-Yellow Off-State Color - In one embodiment, sub-micron size granules of TiO03-05-2009
20120138994LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHT UNIT - A light emitting device according to an embodiment of the present invention includes a first conductive semiconductor layer providing a roughness on a upper surface thereof and including a PEC etching control layer; an active layer under the first conductive semiconductor layer; a second conductive semiconductor layer under the active layer; a reflective electrode electrically connected to the second conductive semiconductor layer; and a first electrode electrically connected to the first conductive semiconductor layer.06-07-2012
20120138989LIGHT EMITTING DEVICE PACKAGE AND METHOD OF MANUFACTURING THE SAME - A light emitting device package includes a plurality of lead frames separated from one another; at least one light emitting device provided with a wire bonding pad attached to a lower surface thereof opposite an upper light emission surface thereof, and mounted on the lead frames such that the wire bonding pad is positioned in a space between the lead frames; a bonding wire electrically connecting the wire bonding pad to the lead frame through the space between the lead frames; and a mold part encapsulating the lead frames, the light emitting device and the bonding wire, and having a reflection groove formed in an upper surface thereof to expose the light emission surface therethrough and a pad groove formed in a bottom surface thereof to expose a portion of the lead frame so as to form a solder pad thereon.06-07-2012
20120138986METHOD FOR FABRICATION OF (AL,IN,GA) NITRIDE BASED VERTICAL LIGHT EMITTING DIODES WITH ENHANCED CURRENT SPREADING OF N-TYPE ELECTRODE - A method of fabricating an (Al, In, Ga)N based optoelectronic device, comprising forming an n-type ohmic contact on an (Al, In, Ga)N surface of the device, wherein the surface comprises an Nitrogen face (N-face) and a N-rich face of the (Al, In, Ga)N, the n-type contact is on the N-face and the N-rich face, and the current spreading of the n-type ohmic contact is enhanced by a combination of a lower and a higher contact resistance on the surface.06-07-2012
20120138982LIGHT-EMITTING DIODE DEVICE - A light-emitting diode (LED) device. In one embodiment, the LED device includes a heat dissipation bulk, a first electrode pad, a second electrode pad and at least one LED chip. The heat dissipation bulk includes at least two concaves. The first electrode pad and the second electrode pad are respectively disposed in the concaves and are electrically isolated from each other. The LED chip is embedded into the heat dissipation bulk, and the heat dissipation bulk electrically isolates the LED chip, the first electrode pad and the second electrode pad. The LED chip includes a first electrode and a second electrode of different conductivity types, and the first electrode and the second electrode are electrically connected to the first electrode pad and the second electrode pad respectively.06-07-2012
20100237373Lighting Device - An object of the present invention is to reduce the thickness of a lighting device using an electroluminescent material. Another object of the present invention is to simplify the structure of a lighting device using an electroluminescent material to reduce cost. A light-emitting element having a stacked structure of a first electrode layer, an EL layer, and a second electrode layer is provided over a substrate having an opening in its center, and a first connecting portion and a second connecting portion for supplying electric power to the light-emitting element are provided in the center of the substrate (in the vicinity of the opening provided in the substrate).09-23-2010
20100237368SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor light emitting device, includes: a substrate including a first major surface and a second major surface, the first major surface including a recess and a protrusion, the second major surface being formed on a side opposite to the first major surface; a first electrode provided on the first major surface; a semiconductor light emitting element provided on the first electrode and electrically connected to the first electrode; a second electrode provided on the second major surface; and a through-electrode provided to pass through the substrate at the recess and electrically connect the first electrode and the second electrode.09-23-2010
20100237376LIGHT EMITTING DEVICE PACKAGE AND MANUFACTURING METHOD THEREOF - Provided is a light emitting device package. The light emitting device package comprises a base substrate, a frame, and a light emitting device. The base substrate comprises a plurality of electrode pads. The frame is formed of silicon, attached on the base substrate, and has an opening. The light emitting device is electrically connected to the electrode pad in the opening.09-23-2010
20100237375Light Emitting Device - A light emitting device (09-23-2010
20100237371LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME - Disclosed is a light emitting device. The light emitting device comprises a light emitting semiconductor layer comprising a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, a second electrode layer supporting the light emitting semiconductor layer while surrounding the light emitting semiconductor layer, and a first passivation layer between a side of the light emitting semiconductor layer and the second electrode layer.09-23-2010
20120187433STRUCTURE OF LIGHT SOURCE MODULE AND MANUFACTURING METHOD THEREOF - A circuit substrate and at least one light-emitting diode (LED) chip are adhered to a heatsink substrate in sequence, and then a packaging material is formed on the LED chip. The circuit substrate has at least one through hole, and the LED chip is buried in the through hole on the circuit substrate so that the LED chip is in direct contact with the heatsink substrate, so as to reduce the thermal resistance between the LED chip and the heatsink substrate, thus effectively dissipating the heat energy of the LED chip through the heatsink substrate.07-26-2012
20100252847RED LIGHT FLUORESCENT MATERIAL AND MANUFACTURING METHOD THEREOF, AND WHITE LIGHT LUMINESCENT DEVICE - A red light fluorescent material adapted for being excited by a first light to emit a red light is provided. The red light fluorescent material has the chemical formula (1) presented below,10-07-2010
20100230693White light emitting diode package and method of making the same - A white light emitting diode (LED) package with multilayered encapsulation structure and the packaging methods are disclosed. The white LED package structure includes metal electrodes, a heat dissipation base, a PPA plastic for fixing the electrodes and the heat dissipation base together, at least one LED die, a die attaching material, gold wires for electrically connecting the LED die to the electrodes, a first type of silicone encapsulant, a second type of silicone encapsulant, and a phosphor containing layer. The invention utilizes a low-refractive index silicone (the second type of silicone encapsulant) to separate the phosphor containing layer away from the first type of silicone, which covers the LED die, to prevent/reduce emitted light going backward and hitting the LED die.09-16-2010
20100140637Light Emitting Diode with a Dielectric Mirror having a Lateral Configuration - A light emitting diode is disclosed that includes an active structure, a first ohmic contact on the active structure, and a transparent conductive oxide layer on the active structure opposite the first ohmic contact. The transparent conductive oxide layer has a larger footprint than said active structure. A dielectric mirror is positioned on the transparent conductive oxide layer opposite said active structure and a second contact is positioned on the transparent conductive oxide layer opposite the dielectric mirror and separated from the active structure.06-10-2010
20100224892Nitride Semiconductor Light Emitting Element - Provided is a nitride semiconductor light emitting element that has improved light extraction efficiency and a wide irradiation angle of outgoing light irrespective of the reflectance of a metal used for an electrode. An n side anti-reflection layer 09-09-2010
20110006330SEMICONDUCTOR LIGHT EMITTING DEVICES INCLUDING AN OPTICALLY TRANSMISSIVE ELEMENT AND METHODS FOR PACKAGING THE SAME - Methods of packaging a semiconductor light emitting device include dispensing a first quantity of encapsulant material into a cavity including the light emitting device. The first quantity of encapsulant material in the cavity is treated to form a hardened upper surface thereof having a shape. A luminescent conversion element is provided on the upper surface of the treated first quantity of encapsulant material. The luminescent conversion element includes a wavelength conversion material and has a thickness at a middle region of the cavity greater than proximate a sidewall of the cavity.01-13-2011
20110006331LIGHT-EMITTING DEVICE WITH A SEMI-REMOTE PHOSPHOR COATING - A complex lens and a light-emitting device comprising a complex lens are disclosed. At least one semiconductor die is disposed on a substrate. The complex lens is created by forming a first lens comprising a clear transparent material directly on a surface of each of at least one die, and by forming an outer lens comprising a clear transparent material filled uniformly with phosphor, directly encapsulating the substrate and the at least one die with the formed first lens. The outer lens is in contact with the substrate either directly or through an intervening reflective layer of the light-emitting device.01-13-2011
20110006329WAVELENGTH CONVERSION MEMBER AND METHOD FOR MANUFACTURING THE SAME - To provide a wavelength conversion member having good surface accuracy and dimensional accuracy even when processed in various shapes, and a method for manufacturing the same. A method for manufacturing a wavelength conversion member, including the steps of: subjecting a preform made of a powder mixture containing a glass powder and an inorganic phosphor powder to heat treatment, thereby obtaining a sintered powder product; and re-press molding the sintered powder product with a die.01-13-2011
20110006328LIGHTING UNIT WITH TEMPERATURE COMPENSATION - A lighting unit comprises a packaging substrate (01-13-2011
20110006326LIGHT-EMITTING DIODE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A light-emitting diode (LED) structure and a method for manufacturing the same are described. The light-emitting diode structure includes a p-type electrode, a bonding substrate, a p-type semiconductor layer, an active layer, an n-type semiconductor layer, an epitaxial growth substrate and an n-type electrode. The bonding substrate is disposed on the p-type electrode. The p-type semiconductor layer is disposed on the bonding substrate. The active layer is disposed on the p-type semiconductor layer. The n-type semiconductor layer is disposed on the active layer. The epitaxial growth substrate is disposed on the n-type semiconductor layer, wherein the epitaxial growth substrate includes an opening penetrating the epitaxial growth substrate. The n-type electrode is disposed in the opening and is electrically connected to the n-type semiconductor layer.01-13-2011
20110006325PHOSPHOR AND LED LIGHT-EMITTING DEVICE USING THE SAME - An LED light emitting device is provided that has high color rendering properties and is excellent color uniformity and, at the same time, can realize even luminescence unattainable by conventional techniques. A phosphor having a composition represented by formula: (Sr01-13-2011
20120126263ORGANIC ELECTROLUMINESCENCE DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic electroluminescence device and a method of manufacturing the same are provided. The organic electroluminescence device is suitable for being configured on a substrate. The organic electroluminescence device includes a first electrode, a first doped carrier transporting layer, a light-emitting layer, a second doped carrier transporting layer, and a second electrode. The first electrode is configured on the substrate. The first doped carrier transporting layer is configured on the first electrode. The light-emitting layer is configured on the first doped carrier transporting layer. The second doped carrier transporting layer is configured on the light-emitting layer and has a first surface in contact with the light-emitting layer and a second surface opposite to the first surface. The first surface is substantially a planar surface, and the second surface is a rough surface having a plurality of micro-protrusions. The second electrode is configured on the second surface.05-24-2012
20120126262ETCHING GROWTH LAYERS OF LIGHT EMITTING DEVICES TO REDUCE LEAKAGE CURRENT - The present disclosure relates to methods for fabricating LEDs by patterning and etching an n-doped epitaxial layer to form regions of roughened surface of the n-doped layer and mesa structures adjacent to the roughened surface regions before depositing an active layer and the rest of the epitaxial layers on the mesa structures. The method includes growing epitaxial layers of an LED including an un-doped layer and an n-doped layer on a wafer of growth substrate. The method also includes patterning the n-doped layer to form a first region of the n-doped layer and a mesa region of the n-doped layer adjacent to the first region. The method further includes etching the first region of the n-doped layer to create a roughened surface. The method further includes growing additional epitaxial layers of the LED including an active layer and a p-doped layer on the mesa region of the n-doped layer.05-24-2012
20120126265LED PACKAGE - An exemplary LED package includes a substrate, an electric layer formed on the substrate, an LED chip mounted on the substrate and electrically connected with the electric layer, a first fluorescent layer and a second fluorescent layer. The first fluorescent encloses the LED chip and includes first phosphorous compounds. The second fluorescent covers the first fluorescent layer and includes second phosphorous compounds different from the first phosphorous compounds. The second fluorescent layer is detachably mounted at an outside of the first fluorescent layer.05-24-2012
20120126267LIGHT EMITTING DIODE PACKAGE AND MANUFACTURING METHOD THEREOF - A method for manufacturing a light emitting diode (LED) package is provided. The method includes preparing a package body including a first lead frame formed with a cavity and inserted on one side of a bottom surface of the cavity and a second lead frame inserted on the other side, mounting an LED chip on the bottom surface and electrically connecting the LED chip with the first lead frame and the second lead frame, forming a molding portion by a molding resin in the cavity, connecting, to the package body, a first mold corresponding to the molding portion and including a through hole having an inner surface linearly or non-linearly inclined, connecting a second mold to an upper surface of the first mold, forming a lens portion on the molding portion by a transparent resin, and separating the first mold and the second mold from the package body.05-24-2012
20120126266ILLUMINATION APPARATUS - According to one embodiment, an illumination apparatus includes an LED (Light Emitting Diode) module, a light guide plate, and a support body. The support body supports the LED module and the light guide plate. A reflective surface of the support body is provided between a portion supporting the LED module and a portion supporting the light guide plate. The reflective surface is reflective with respect to the light emitted from the LED package. The LED module is tilted relative to the reflective surface with the LED package mounting surface being toward the reflective surface. An angle between the LED module and the reflective surface is less than 90°.05-24-2012
20120193664SEMICONDUCTOR LIGHT EMITTING STRUCTURE - A semiconductor light emitting structure includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer and two electrodes. The substrate has a top surface and a bottom surface. The top surface is not parallel to the bottom light emitting surface of the active layer. The first semiconductor layer is disposed on the top surface. The active layer is disposed on at least one portion of the first semiconductor layer. The second semiconductor layer is disposed on the active layer. In an embodiment, the top surface can be realized by an oblique surface, a curved surface or a zigzag surface.08-02-2012
20100127286ILLUMINATION SYSTEM COMPRISING A GREEN-EMITTING CERAMIC LUMINESCENCE CONVERTER - An Illumination system comprising a radiation source and a monolithic ceramic luminescence converter comprising at least one phosphor capable of absorbing a part of the light emitted by the radiation source and emitting light of a wavelength different from that of the absorbed light, wherein said at least one phosphor is an europium(II)-activated oxonitridosilicate of the general formula (Sr1-a-b-c-d-e-fCabBacMgdZneCef)Six-gGegNyOz:Eua, wherein 0.00105-27-2010
20110233588Semiconductor light-emitting device - A first intermediate electrode 09-29-2011
20100252846BACKLIGHT INCLUDING SEMICONDUCTIOR LIGHT EMITTING DEVICES - A light source such as a semiconductor light emitting diode is positioned in a first opening in a transparent member, which may function as a waveguide in a display. The transparent member surrounds the light source. No light source is positioned in a second opening in the transparent member. In some embodiments, the first opening is shaped to direct light into the transparent member. In some embodiments, a reflector is positioned over the light source. The reflector includes a flat portion and a shaped portion. The shaped portion extends from the flat portion toward the light source.10-07-2010
20100252850SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME - Provided are a semiconductor light emitting device and a method of fabricating the same. The semiconductor light emitting device comprises a multireflection layer comprising at least one of reflection layers of different refractive indices, a first conductive semiconductor layer on the multireflection layers, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer.10-07-2010
20100252845WHITE-LIGHT LIGHT EMITTING DIODE CHIPS AND FABRICATION METHODS THEREOF - A white-light LED chip and a fabrication method thereof are provided. The white-light LED chip comprises a blue-light LED chip and a phosphor layer directly disposed on a top surface of the blue-light LED chip. The method comprises providing a plurality of blue-light LED chips attached to a substrate, wherein at least one contact pad is formed on the top surface of each blue-light LED chip. A protective layer is formed on the contact pad. A phosphor layer is formed on the top surface of the blue-light LED chip by a molding process, exposing the contact pad. Finally, the protective layer and the substrate are removed from the blue-light LED chip to form a white-light LED chip.10-07-2010
20100140644ORGANIC EL DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - An object of the invention is to provide an organic EL display device manufacturing method that allows the reliability of the organic EL display device having undergone a defect repair process to be improved. A method for manufacturing an organic EL display device, the method including an organic EL element substrate formation step of forming at least one organic EL element on an organic EL element substrate, the organic EL element including an organic EL film, an anode electrode and a reflection electrode that form a first conductive film provided below the organic EL film, and a cathode electrode that forms a second conductive film provided above the organic EL film, a resin sealing step of providing a thermoplastic sealing resin to cover the upper side of the organic EL element, a defect detection step of detecting a defect in the organic EL element, and a defect elimination step of eliminating the defect detected in the defect detection step by irradiating the defect with a laser beam.06-10-2010
20100140640SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - Provided is an optical semiconductor device includes: a light-emitting layer having a first main surface, a second main surface opposed to the first main surface, a first electrode and a second electrode which are formed on the second main surface; a fluorescent layer provided on the first main surface; a light-transmissive layer provided on the fluorescent layer and made of a light-transmissive inorganic material; a first metal post provided on the first electrode; a second metal post provided on the second electrode; a sealing layer provided on the second main surface so as to seal in the first and second metal posts with one ends of the respective first and second metal posts exposed; a first metal layer provided on the exposed end of the first metal post; and a second metal layer provided on the exposed end of the second metal post.06-10-2010
20100140636Light Emitting Diode with Improved Light Extraction - A light emitting diode is disclosed that includes an active region and a plurality of exterior surfaces. A light enhancement feature is present on at least portions of one of the exterior surfaces of the diode, with the light enhancement feature being selected from the group consisting of shaping and texturing. A light enhancement feature is present on at least portions of each of the other exterior surfaces of the diode, with these light enhancement features being selected from the group consisting of shaping, texturing, and reflectors.06-10-2010
20110108870OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND PRINTED CIRCUIT BOARD - An optoelectronic semiconductor component includes a connection carrier with at least two connection points and configured with a silicone matrix with a fiber reinforcement, and at least one optoelectronic semiconductor chip mounted on the connection carrier and in direct contact therewith.05-12-2011
20100096655TOP EMISSION TYPE ORGANIC ELECTROLUMINESCENT DEVICE AND METHOD OF FABRICATING THE SAME - An organic electroluminescent device includes a first substrate including a plurality of pixel regions; a thin film transistor on the first substrate and in each pixel region; a second substrate facing the first substrate; an organic electroluminescent diode on the second substrate and connected to the thin film transistor; a seal pattern at edges of the first and second substrates; and an adhesive layer including a plurality of conductive balls, an inner space defined by the first substrate, the second substrate and the seal pattern filled with the adhesive layer.04-22-2010
20120241789LED PACKAGE, METHOD FOR MAKING THE LED PACKAGE AND LIGHT SOURCE HAVING THE SAME - An LED package includes a light transmissive encapsulation, an LED die, a fluorescent layer, a baffle wall, a positive electrode and a negative electrode. The encapsulation includes a light emitting surface and a bottom surface opposite to the light emitting surface. The LED die, the fluorescent layer and the baffle wall are embedded in the encapsulation from the bottom surface side. The LED die includes a front surface for outputting light outward and a back surface opposite to the front surface. The front surface faces the light emitting surface of the encapsulation, and the back surface is exposed outside. The fluorescent layer is formed on the front surface of the LED die. The baffle wall surrounds the LED die and the fluorescent layer. The positive electrode and negative electrode are electrically connected to the LED die.09-27-2012
20120241787LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF - A method of fabricating a vertical light emitting diode including: growing a low doped first semiconductor layer on a sacrificial substrate; forming an aluminum layer on the low doped first semiconductor; forming an AAO layer having a large number of holes formed therein by anodizing the aluminum layer; etching and patterning the low doped first semiconductor layer using the aluminum layer as a shadow mask, thereby forming grooves; removing the aluminum layer remaining; sequentially forming a high doped first semiconductor layer, an active layer and a second semiconductor layer on the low doped first semiconductor layer with the grooves; forming a metal reflective layer and a conductive substrate on the second semiconductor layer; separating the sacrificial substrate; and forming an electrode pad on the other surface of the low doped first semiconductor layer, the electrode pad filled in the grooves and in ohmic contact with the high doped first semiconductor.09-27-2012
20120241788Textured Light Emitting Devices and Methods of Making the Same - Light emitting devices having a textured light emission surface and methods are disclosed. A light emitting device can include a semiconductor substrate having a light emission surface, a semiconductive junction and a textured region formed via laser irradiation on the light emission surface. During us of the light emitting device, light generated by the semiconductive junction can primarily emit through the light emission surface having the textured region.09-27-2012
20100090243LIGHT EMITTING DEVICE HAVING LIGHT EXTRACTION STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.04-15-2010
20100090242LIGHT EMITTING DEVICE HAVING LIGHT EXTRACTION STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.04-15-2010
20130126926SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME - A semiconductor light emitting device which has a wavelength converting part on a semiconductor film and can eliminate unevenness in emission color without a reduction in light output. The semiconductor film includes a light emitting layer. The support substrate is bonded to the semiconductor film via a light-reflecting layer and has a support surface supporting the semiconductor film and edges located further out than the side surfaces of the semiconductor film. The light-shielding part covers the side surfaces of the semiconductor film and part of the support surface around the semiconductor film in plan view. The wavelength converting part contains a fluorescent substance and is provided over the support substrate to bury the semiconductor film and the light-shielding part therein. The wavelength converting part has a curved surface shape in which its thickness increases when going from the edges toward the center of the semiconductor film.05-23-2013
20130126927SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes a substrate having a wiring pattern formed thereon, and a semiconductor light emitting element mounted on one main surface of the substrate and electrically connected to the wiring pattern. The substrate has, on the one main surface, a serrated structure reflecting at least part of light emitted from said semiconductor light emitting element to the substrate, to a direction perpendicular to the one main surface.05-23-2013
20120138995LIGHT EMITTING DEVICE - A light emitting device includes a substrate, a first conductive type semiconductor layer disposed on the substrate, an active layer disposed on one part of the first conductive type semiconductor layer, a second conductive type semiconductor layer disposed on the active layer, a first electrode disposed on the second conductive type semiconductor layer, and a second electrode disposed on the other part of the first conductive type semiconductor layer, wherein a trench is formed at a portion of the second conductive type semiconductor layer, the active layer or the first conductive type semiconductor layer so that the trench is disposed under the first electrode.06-07-2012
20130126928LIGHT EMITTING DIODE CHIP, AND METHODS FOR MANUFACTURING AND PACKAGING THE SAME - A light emitting diode chip includes a substrate, an epitaxial layer, two inclined plane units, and two electrode units. The substrate has top and bottom surfaces. The epitaxial layer is disposed on the top surface of the substrate. Each of the inclined plane units is inclined downwardly and outwardly from the epitaxial layer toward the bottom surface of the substrate, and includes an inclined sidewall formed on the epitaxial layer, and a substrate inclined wall formed on the substrate. Each of the electrode units includes an electrode disposed on the epitaxial layer, and a conductive portion extending from the electrode to the substrate inclined wall along corresponding one of the inclined plane units.05-23-2013
20130126929METHOD FOR MANUFACTURING NANO-IMPRINT MOULD, METHOD FOR MANUFACTURING LIGHT-EMITTING DIODE USING THE NANO IMPRINT MOULD MANUFACTURED THEREBY, AND LIGHT-EMITTING DIODE MANUFACTURED THEREBY - A method of manufacturing a light emitting diode, includes a process of forming an n-type nitride semiconductor layer, a light emitting layer, and a p-type nitride semiconductor layer on a temporary substrate, a process of forming a p-type electrode on the p-type nitride semiconductor layer, a process of forming a conductive substrate on the p-type electrode, a process of removing the temporary substrate to expose the n-type nitride semiconductor layer, a process of forming a nanoimprint resist layer on the n-type nitride semiconductor layer, a process of pressing the nanoimprint mold on the nanoimprint resist layer to transfer the nano-pattern onto the nanoimprint resist layer, and a process of separating the nanoimprint mold from the nanoimprint resist layer having the nano-pattern and etching a portion of the nanoimprint resist layer having the nano-pattern to form an n-type electrode.05-23-2013
20130126930LIGHT SOURCE DEVICE - Disclosed herein is a light source device for converting excited light into long-wavelength light having a longer wavelength than the excited light. The light source includes: an excited light source emitting excited light; a wavelength conversion member including a light transmission plate and a wavelength conversion layer formed on the light transmission plate and receiving the excited light from the excited light source and emitting long-wavelength light having a longer wavelength than the excited light, the excited light emitted from the excited light source being incident upon one side of the wavelength conversion layer; a light reflection member provided at one side of the wavelength conversion member and including an excited light transmission window transmitting the excited light; and a filter member provided at the other side of the wavelength conversion member and reflecting the excited light and transmitting the long-wavelength light.05-23-2013
20090020777VERTICAL RESONATOR TYPE LIGHT EMITTING DIODE - A novel vertical resonator type light emitting diode of which has a simplified structure of the reflector layer of its light emitting side an which is resistant to declination of its emission output power towards a high temperature range, has an active layer 01-22-2009
20090020776Light-emitting device - A light-emitting device comprises a channel structure in the semiconductor layer for connecting an electrode and an ohmic contact layer by means of a substrate transfer process including a wafer-bonding process and a substrate-lifting-off process. The channel structure is formed in the semiconductor stack for electrically connecting the ohmic contact layer and the electrode and driving the current into the light-emitting device. Thereby, a horizontal type or a vertical type of light-emitting device has a good ohmic contact and high light efficiency.01-22-2009
20090020773SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a semiconductor light emitting device. The method includes: mounting a semiconductor light emitting element on a flat substrate; covering the semiconductor light emitting element on the flat substrate by a cover layer in a domed shape to form a light emitting device, the cover layer including at least a phosphor layer and a coating resin layer that are laminated in order, so as to fill around the semiconductor light emitting element; measuring an emission condition of the light emitting device; and forming a convex lens unit on the outermost of the coating resin layer using a liquid droplet discharging apparatus to adjust an emission distribution of the light emitting device based on the measured emission condition.01-22-2009
20090020774PACKAGE OF LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - Provided is a package of a light emitting diode. The package includes a metal plate, a light-emitting diode chip, an insulating layer, a lead frame, a reflective coating layer, and a molding material. The light-emitting diode chip is surface-mounted on the metal plate, and the insulating layer is formed on the metal plate and is separated from the light-emitting diode chip. The lead frame is provided on the insulating layer, the reflective coating layer is formed on the lead frame, and the molding material molds the light-emitting diode chip in a predetermined shape.01-22-2009
20090020772LIGHT-EMITTING DEVICE AND METHOD FOR MAKING THE SAME - A light-emitting device is capable of emitting a light having a wavelength ranging from 300 to 550 nm, and includes: a substrate; a p-type semiconductor layer disposed on the substrate; an active layer disposed on the p-type semiconductor layer; a n-type semiconductor layer disposed on the active layer and having a waveguide-disposing surface; and a waveguide structure formed on the waveguide-disposing surface of the n-type semiconductor layer and having a plurality of spaced apart nanorods extending from the waveguide-disposing surface.01-22-2009
20110057227LED Comprising a Multiband Phosphor System - The invention relates to an LED module comprising at least one blue LED and a color conversion layer that is applied thereto and emits a mixed light of the blue light of the LED and the convened spectrum of the color conversion layer. The color conversion layer has at least three different phosphors which at least partially convert the light of the blue LED into red, green, and yellow or yellowish-green light. The phosphor for conversion into red light is a doped nitride compound, preferably a nitridosilicate.03-10-2011
20110057226LED Module Comprising a Dome-shaped Color Conversion Layer - An LED module comprises at least one LED chip (03-10-2011
20110057225Light Emitting Device - A light emitting device includes a leadframe, a light emitting unit, a transparent encapsulant, and a fluorescent colloid layer. The light emitting unit is disposed on the leadframe. The transparent encapsulant covers the light emitting unit, wherein the transparent encapsulant has a concave on which at least one reflective surface is disposed. The fluorescent colloid layer is disposed outside the transparent encapsulant, wherein a chamber is formed between the fluorescent colloid layer and the transparent encapsulant. The light generated by the light emitting unit is reflected by the reflective surface and guided to a side wall of the fluorescent colloid layer.03-10-2011
20110057224LIGHT EMITTING DEVICE, SYSTEM AND PACKAGE - A light emitting device includes a light emitting structure formed from an active layer located between two semiconductor layers. An insulator extends through the active layer and at least partially through the semiconductor layers, and the light emitting structure is located between a first electrode and a second electrode layer. The first electrode and insulator overlap one another and may have the same or different widths.03-10-2011
20110057223LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM INCLUDING THE SAME - Embodiments relate to a light emitting device, a light emitting device package, and a lighting system including the same. The light emitting device includes a light emitting structure, a second electrode under the light emitting structure and an insulating layer disposed on the at least one of the protrusions. The second electrode includes a bottom member and at least one of protrusions on the bottom member that penetrates the second conductive type semiconductor layer and the active layer. The at least one of the protrusions includes an upper portion and a lower portion having different size.03-10-2011
20110057222ORGANIC ELECTROLUMINESCENT ELEMENT, AND METHOD FOR PRODUCING THE SAME - The present invention provides a method for producing an organic electroluminescent element, the method including: arranging, on a surface of a substrate having an electrostatic charge, particles provided with a surface electrostatic charge opposite to the electrostatic charge on the surface of the substrate, so that the particles are fixed on the surface of the substrate with an electrostatic force, and forming a thin film on the surface of the substrate on which the particles have been fixed.03-10-2011
20110057221ORGANIC ELECTROLUMINESCENCE DEVICE AND METHOD FOR PRODUCING THE SAME - To provide an organic electroluminescence device including: an organic electroluminescence portion which includes at least an anode, a light-emitting layer and a cathode; a sealing layer which covers a surface of the cathode of the organic electroluminescence portion; a lens which is provided over the sealing layer and controls an optical path of light emitted from the light-emitting layer; and a low-refractive-index layer provided between the sealing layer and the lens, wherein the low-refractive-index layer has a refractive index lower than a refractive index of the sealing layer.03-10-2011
20110057220NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - A nitride semiconductor light-emitting device includes a laminate structure formed of a plurality of nitride semiconductor layers including a light-emitting layer, and having cavity facets facing each other, a first protection film made of AlN, formed over a light-emitting facet of the cavity facets, and a second protection film made of Al03-10-2011
20110057219NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE - An exemplary nitride-based semiconductor light emitting device includes a substrate, a nitride-based multi-layered structure epitaxially formed on the substrate, a first-type electrode and a second-type electrode formed on the nitride-based multi-layered structure and connected with the first-type layer and the second-type layer, respectively. The multi-layered structure includes a first-type layer, an active layer and a second-type layer arranged along a direction away from the substrate in the order written. The second-type layer defines a number of grooves at the top surface. Each groove has a side surface and a bottom surface adjoining the side surface. The side surface and the bottom surface cooperatively form an included angle which is in a range from 140 degree to 160 degree.03-10-2011
20110057218RADITION-EMITTIN SEMICONDUCTOR COMPONENT,RECEPTACLE FOR A RADIATION-EMITTING SEMICONDUCTOR COMPONENT,AND METHOD FOR PRODUCING A RADIATION-EMITTING SEMICONDUCTOR COMPONENT - A semiconductor based component with radiation-emitting properties. A glass substrate (03-10-2011
20110057217Led Package structure for increasing heat-dissipating and light-emitting efficiency and method for manufacturing the same - An LED package structure for increasing heat-dissipating and light-emitting efficiency includes a substrate unit, an alloy unit, a light-emitting unit, a conductive unit and a package unit. The substrate unit has a substrate body, a first conductive pad, a second conductive pad and a chip-placing pad. The alloy unit has a Ni/Pd alloy formed on the chip-placing pad. The light-emitting unit has an LED chip positioned on the Ni/Pd alloy of the alloy unit by solidified solder ball or glue. The conductive unit has two conductive wires, and the LED chip is electrically connected to the first conductive pad and the second conductive pad by the two conductive wires, respectively. The package unit has a light-transmitting package gel body formed on the top surface of the substrate body in order to cover the light-emitting unit and the conductive unit.03-10-2011
20110057216Low profile optoelectronic device package - A low profile optoelectronic device package has a matalized transparent substrate, a chip and a dam ring. The matalized transparent substrate has a transparent board, a window area, and a metal pattern formed on a face of the transparent board and around the window area and having at least one outer contact pad and at least two contact pads. An active face of the chip is mounted to the at least two inner contact pads and aligned to the window area. A bottom face of the chip, that is opposite to the active face is further added a soldering layer. The dam ring is sealed a joint between the chip and the matalized transparent substrate so as to define an air cavity among the chip, the matalized transparent substrate and the dam ring. The matalized transparent substrate is used as a substrate and an optical cover of a conventional device package, so the optoelectronic device package provides low profile, small area outline, low fabricating cost and high lighting efficiency.03-10-2011
20110057215Light-Emitting Diode Display Module - An LED display module is provided, including a cover element, with the cover element having lenses on one side and the other side having a housing space to house a lighting module, a frame element and the water-proof pad located at the junction of the cover element and the frame element to prevent water from leaking through into the LED display module.03-10-2011
20100127298LIGHT EMITTING DEVICE - A light emitting device including a substrate, a first conductive semiconductor layer on the substrate, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, and a reflective layer under the substrate and including a light reflection pattern configured to reflect light emitted by the active layer in directions away from the reflective layer.05-27-2010
20100127288LIGHT-EMITTING DIODE DEVICES AND METHODS FOR FABRICATING THE SAME - An LED device including a support structure with at least one LED die mounted thereon, a recess formed in a part of the support structure from a side of the LED die, and a lens formed over the support structure to encapsulate the LED die and the recess, thereby forming a protrusion in the support structure is disclosed.05-27-2010
20100207152LIGHTING EMITTING DEVICE PACKAGE - Disclosed is a light emitting device package. The light emitting device package includes a package body including a cavity formed therein with first and second via holes, a first electrode extending from one side of the cavity to one side of a rear surface of the package body through the first via hole, a second electrode extending from an opposite side of the cavity to an opposite side of the rear surface of the package body through the second via hole, a light emitting device connected with the first and second electrodes, an insulating layer insulating the first and second electrodes from the package body, and a reflective layer disposed on the insulating layer having a structure in which first and second media having different refractive indexes are alternately stacked on each other.08-19-2010
20090289270GROUP III NITRIDE SEMICONDUCTOR MULTILAYER STRUCTURE AND PRODUCTION METHOD THEREOF - According to the invention it is possible to obtain a flat AlN crystal film seed layer with a high degree of crystallinity, and particularly, a flat AlN crystal film seed layer that is homogeneous throughout can be used even with large substrates having diameters of 100 mm and greater, in order to obtain highly crystalline GaN-based thin-films for highly reliable, high-luminance LED elements and the like. The invention relates to a Group III nitride semiconductor multilayer structure obtained by layering an n-type semiconductor layer, composed of a Group III nitride semiconductor, a luminescent layer and a p-type semiconductor layer, on a sapphire substrate, the Group III nitride semiconductor multilayer structure having an AlN crystal film that is accumulated as the seed layer by sputtering on the sapphire substrate surface, and the AlN crystal film having a grain boundary spacing of 200 nm or greater. The arithmetic mean surface roughness (Ra) of the AlN crystal film surface is preferably no greater than 2 angstrom. The oxygen content of the AlN crystal film is preferably no greater than 5 atomic percent.11-26-2009
20080315230ELECTRONIC COMPONENT PACKAGE AND METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC COMPONENT DEVICE - An electronic component package, includes a package substrate portion constructed by a silicon substrate in which a through hole is provided, an insulating layer formed on both surface sides of the silicon substrate and an inner surface of the through hole, and a through electrode filled in the through hole, and a frame portion provided upright on a peripheral portion of the package substrate portion to constitute a cavity on the silicon substrate, wherein an upper surface of the through electrode in the cavity is planarized such that a height of the through electrode is set equal to a height of the insulating layer. The frame portion is joined to the package substrate portion by the low-temperature joining utilizing the plasma process after the through electrode is planarized.12-25-2008
20100200881Light Emitting Element and Illumination Device - A light emitting element comprises a semiconductor layer (08-12-2010
20090309114WAVELENGTH CONVERTING LIGHT-EMITTING DEVICES AND METHODS OF MAKING THE SAME - Wavelength converting light-emitting devices and methods of making the same are provided. In some embodiments, the devices include a phosphor material region designed to convert the wavelength of emitted light.12-17-2009
20090283784SIDE-VIEW LIGHT EMITTING DIODE - An exemplary side-view light emitting diode (LED) includes a substrate, a housing, a LED chip, a capsulation material and a reflecting layer. The housing and the substrate cooperatively form a receiving space therebetween. The LED chip is received in the receiving space and electrically connected with the substrate. The capsulation material is filled in the receiving space and encapsulates the LED chip in the housing. An indent is defined in a top portion of the capsulation material to cave a top surface of the capsulation material. The reflecting layer is spread on the top surface of the capsulation material. The light emitted from the LED chip upwardly towards the top surface of the capsulation material is reflected to a lateral side of the housing by the reflecting layer. The indent has a horizontal section with a size decreased along a top-to-bottom direction. The housing has a diameter gradually increased along the top-to-bottom direction.11-19-2009
20110127553LED UNIT - An LED (light emitting diode) unit includes an LED and a lens mounted on the LED. The lens defines a passageway at a central portion thereof. The passageway runs through the lens. The lens includes a concave light emitting surface at a top thereof. Light output from the LED with a small light-emission angle travels directly through the passageway, without a loss of light intensity.06-02-2011
20100193810Optical Device and the Forming Method Thereof - An optical device is provided which includes a first electrode; a substrate disposed on the first electrode; a plurality of multi-layer film structures disposed on the substrate, and the multi-layer film structure consisted of at least two insulated layer with different reflection index formed alternately; a first semiconductor conductive layer disposed on the substrate to cover the multi-layer film structure; an active layer disposed on the first semiconductor conductive layer; a second semiconductor conductive layer disposed on the active layer; a transparent conductive layer disposed on the second semiconductor conductive layer; and a second electrode disposed on the transparent conductive layer, thereby, the multi-layer structure can increase the light reflective effect or anti-reflective effect within the optical device to improve the light emitting effective.08-05-2010
20120193667Method for Controlling Fluidity of Phosphor, Phosphor and Phosphor Paste - Disclosed herein is a method for controlling the fluidity of a phosphor, a phosphor and a phosphor paste, the method comprising the steps of: treating the surface of a phosphor with a silane compound comprising a double bond; and polymerizing the monomer on the surface of the phosphor to form a polymer membrane thereon. The phosphor having the polymer membrane formed thereon exhibits significantly stabilized fluidity within a polymer encapsulant.08-02-2012
20120193668LIGHT EMITTING DEVICE - A light emitting device including a light emitting structure having a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; a first electrode on the light emitting structure; and a photon escape layer on the light emitting structure. Further, the photon escape layer has a refractive index that is between a refractive index of the light emitting structure and a refractive index of an encapsulating material with respect to the light emitting structure such that an escape probability for photons emitted by the light emitting structure is increased.08-02-2012
20120193665LIGHT EMITTING DEVICE - A light emitting device which includes: a base body; a conductive member disposed on the base body; a light emitting element placed on the conductive member; and a translucent member disposed above the light emitting element. A surface of the translucent member is formed in a lens shape, and when a portion formed in the lens shape of the translucent member on a surface of the conductive member is perspectively seen from above, an area other than a portion where the light emitting element is placed is coated with an insulating filler to form a light reflection layer.08-02-2012
20120193662REFLECTIVE MOUNTING SUBSTRATES FOR FLIP-CHIP MOUNTED HORIZONTAL LEDS - A light emitting device includes a mounting substrate having a reflective layer that defines spaced apart anode and cathode pads, and a gap between them. A light emitting diode die is flip-chip mounted on the mounting substrate, such that the anode contact of the LED die is bonded to the anode pad and the cathode contact of the LED die is bonded to the cathode pad. A lens extends from the mounting substrate to surround the LED die. The reflective layer extends on the mounting substrate to cover substantially all of the mounting substrate that lies beneath the lens, excluding the gap, and may also extend beyond the lens.08-02-2012
20090256168DISPLAY ELEMENT, MANUFACTURING METHOD OF THE SAME AND DISPLAY DEVICE - A display element including: a first electrode; an auxiliary wiring formed on the periphery of the first electrode in such a manner as to be insulated from the first electrode; an insulating portion having first and second openings, the first opening adapted to expose the first electrode, and the second opening adapted to expose the auxiliary wiring, an organic layer adapted to cover at least the exposed surface of the first electrode in the first opening; and a second electrode adapted to cover at least the organic layer and the exposed surface of the auxiliary wiring in the second opening, wherein the organic layer has a layered structure which includes at least a hole injection layer and light-emitting layer stacked in this order from the side of the first electrode, and the edge of the hole injection layer is provided more inward than the edge of the organic layer.10-15-2009
20090321764Method of Manufacturing Organic Light Emitting Device and Organic Light Emitting Device Manufactured by Using The Method - Disclosed is a method of manufacturing an organic light emitting device, an organic light emitting device manufactured by using the method, and an electronic device including the organic light emitting device. The method includes (a) forming an insulating layer on a lower electrode, (b) etching the insulating layer to form an opening ranging from an upper surface of the insulating layer to the lower electrode so that an overhang structure having a lowermost circumference that is larger than an uppermost circumference is formed, (c) forming a conductive layer on an upper surface of the lower electrode in the opening and a surface of the insulating layer other than the overhang structure, (d) forming an organic material layer on the conductive layer formed on the upper surface of the lower electrode in the opening, and (e) forming an upper electrode on an upper surface of the conductive layer disposed on the upper surface of the insulating layer and an upper surface of the organic material layer.12-31-2009
20090200568SEMICONDUCTOR LIGHT-EMITTING DEVICE - An etching process includes forming a metal-fluoride layer at least as a part of an etching mask formed over a semiconductor layer at a temperature of 150° C. or higher; patterning the metal-fluoride layer; and etching the semiconductor layer using the patterned metal-fluoride layer as a mask. Using this etching method, even an etching-resistant semiconductor layer such as a Group III-V nitride semiconductor can be easily etched by a relatively simpler process.08-13-2009
20090152581LIGHT REFLECTING MATERIAL, PACKAGE FOR LIGHT EMITTING ELEMENT ACCOMMODATION, LIGHT EMITTING DEVICE AND PROCESS FOR PRODUCING PACKAGE FOR LIGHT EMITTING ELEMENT ACCOMODATION - [Problems] To provide a package for light emitting element accommodation that realizes enhanced reflectance without application of a metal plating onto a ceramic.06-18-2009
20090114939ILLUMINATION SYSTEM COMPRISING A RADIATION SOURCE AND A LUMINESCENT MATERIAL - An illumination system, comprising a radiation source and a luminescent material comprising at least one phosphor capable of absorbing a part of the light emitted by the radiation source and emitting light having a wavelength different from that of the absorbed light; wherein said at least one phosphor is a yellow to red-emitting europium(II)-activated ortho-phosphosilicate of general formula EA05-07-2009
20100219436SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR LIGHT-EMITTING DEVICE - The present invention provides a semiconductor light-emitting device that includes a compound semiconductor layer formed by laminating a first clad layer, a light-emitting layer and a second clad layer, a plurality of first ohmic electrodes formed on the first clad layer, a plurality of second ohmic electrodes formed on the second clad layer, a transparent conductive film that is formed on the first clad layer of the compound semiconductor layer and is conductively connected to the first ohmic electrodes, a bonding electrode formed on the transparent conducting film, and a support plate that is positioned on the second clad layer side of the compound semiconductor layer and is conductively connected to the second ohmic electrodes.09-02-2010
20100219438SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light-emitting device comprises: a semiconductor substrate; a semiconductor layer structure on the semiconductor substrate, including an active layer and a waveguide ridge; an electrode in contact with all of a top surface of the waveguide ridge; and an insulating film coating side faces of the waveguide ridge, side faces of the electrode, and ends, but not a center portion, of an upper face of the electrode.09-02-2010
20090152583LIGHT-EMITTING DIODE DEVICE AND MANUFACTURING METHOD THEREOF - A light-emitting diode device includes an epitaxial layer, a current blocking layer and a current spreading layer. The current blocking layer is disposed on one side of the epitaxial layer and contacts with a portion of the epitaxial layer. The current spreading layer is disposed on one side of the epitaxial layer and contacts with at least a portion of the current blocking layer.06-18-2009
20090001397Method and device for providing circumferential illumination - A light source device, comprising at least one light emitting element, an optical for distributing light emitted by the light emitting element(s) into a waveguide material which is in optical communication with the optical funnel, and at least one reflector contacting the waveguide material for redirecting light back into the waveguide material such as to reduce illumination exiting the waveguide material in any direction other than a circumferential direction.01-01-2009
20090039371SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHT EMITTING APPARATUS HAVING THE SAME - A semiconductor light emitting device and a light emitting apparatus having the semiconductor light emitting device are provided. The semiconductor light emitting device comprises a substrate, a light emitting structure on the substrate, comprising a first conductive type semiconductor layer, an active layer, a second conductive type semiconductor layer, and a first electrode unit on sidewalls of the substrate and the first conductive type semiconductor layer.02-12-2009
20090039372Semiconductor light emitting device - A semiconductor light emitting device includes a semiconductor light emitting element, a lead electrically connected to the semiconductor light emitting element, and a resin package covering the semiconductor light emitting element and part of the lead. The resin package includes a lens facing the front of the semiconductor light emitting element. The lead includes an elongated mounting portion projecting from the resin package. The mounting portion includes a pair of first projections spaced from each other in the longitudinal direction and a second projection positioned between the first projections. The first projections and the second projection project in opposite directions from each other in the width direction of the mounting portion.02-12-2009
20090039370SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device and a method of manufacturing the semiconductor light emitting device are provided. The semiconductor light emitting device comprises a substrate having a top surface that is curved to protrude, and a light emitting structure that is curved to protrude on the substrate and comprises an active layer.02-12-2009
20090039369SEMICONDUCTOR LIGHT EMITTING APPARATUS - A semiconductor light emitting apparatus can include a housing filled with a wavelength conversion material-containing resin material which seals a semiconductor light emitting device inside the recess of the housing. A transparent resin material can be charged on the wavelength conversion material-containing resin material, and can be configured to prevent the resin materials from being detached from each other or from other portions, such as a housing. Furthermore, such a semiconductor light emitting apparatus can emit light with less color unevenness. The housing can include a first recessed portion and a second recessed portion. The second recessed portion can have a larger diameter than the first recessed portion so as to form a stepped area at the boundary therebetween. The first recessed portion is filled with the wavelength conversion material-containing resin material as a first resin. The first resin extends along from an inner surface of the first recessed portion up to an inner surface of the second recessed portion to cover the inner surface of the second recessed portion. Accordingly, the first resin is recessed at its center area toward the semiconductor light emitting device to form a curved upper surface, and the second resin on the first resin is not in contact with the housing.02-12-2009
20090114935Light emitting diode and process for fabricating the same - A light emitting diode (LED) is provided. The LED at least includes a substrate, a saw-toothed multilayer, a first type semiconductor layer, an active emitting layer and a second type semiconductor layer. In the LED, the saw-tooth multilayer is formed opposite the active emitting layer below the first type semiconductor layer by an auto-cloning photonic crystal process. Due to the presence of the saw-tooth multilayer on the substrate of the LED, the scattered light form a back of the active emitting layer can be reused by reflecting and recycling through the saw-tooth multilayer. Thus, all light is focused to radiate forward so as to improve the light extraction efficiency of the LED. Moreover, the saw-tooth multilayer does not peel off or be cracked after any high temperature process because the saw-tooth multilayer has the performance of releasing thermal stress and reducing elastic deformation between it and the substrate.05-07-2009
20090114938Light emitting diode with sealant having filling particles - An exemplary light emitting diode (LED) includes an LED chip and a transparent sealant covering the LED chip. The sealant contains transparent filling particles and phosphor particles, wherein the filling particles are adjacent each other. Intervals are defined between the filling particles, and the phosphor particles are located in the intervals.05-07-2009
20080303045Semiconductor light emitting device - A semiconductor light emitting device includes a semiconductor light emitting element, a lead electrically connected to the semiconductor light emitting element, and a resin package covering the semiconductor light emitting element and part of the lead. The resin package includes a lens facing the semiconductor light emitting element. The lead includes an exposed portion that is not covered by the resin package. The exposed portion includes a first portion and a second portion, where the first portion has a first mount surface oriented backward along the optical axis of the lens, and the second portion has a second mount surface oriented perpendicularly to the optical axis of the lens.12-11-2008
20090146166Structure Applying Optical Limit Guide Layer - A structure applying an optical wave guide layer includes an incident light source and at least one optical wave guide layer. The structure can be in any geometric shape such as a planar, hemispherical or conical shape. The geometric structure is designed for collecting and guiding the incident light source in specific directions. The light can be guided by a combination of materials having different optical properties. The incident angle of the collected light is controlled and the materials are selected to effectively overcome a drawback of the prior art that a portion of the light of some optical components cannot be extracted by a light extraction method.06-11-2009
20080290356Reflective Layered System Comprising a Plurality of Layers that are to be Applied to a III/V Compound Semiconductor Material - The invention describes a method for producing a reflective layer system and a reflective layer system for application to a III/V compound semiconductor material, wherein a first layer, containing phosphosilicate glass, is applied directly to the semiconductor substrate Disposed thereon is a second layer, containing silicon nitride. A metallic layer is then applied thereto.11-27-2008
20100219435LIGHT EMITTING DEVICE - Provided is a light emitting device. The light emitting device comprises a body, a light emitting diode on the body, a resin layer on the light emitting diode, and a primer layer containing a metal material on the resin layer.09-02-2010
20090108278Manufacturing Method of an Antistatic Flip Chip Substrate Connected to Several Chips - The present invention provides the manufacturing method and device of an antistatic flip chip substrate that can be connected to several chips; this device could protect LED semiconductors against electrostatic discharge damage, and also save cost and space for the assembly of LED semiconductors.04-30-2009
20090108277PERIODICALLY STRUCTURED SUBSTRATE AND LIGHT EMITTING DEVICE INCLUDING THE SAME - A periodically structured substrate includes a slab and a periodic structure formed on the slab and including a plurality of spaced apart first surrounding elements and a plurality of spaced apart central elements. The first surrounding elements are periodically arranged in such a manner to form repeating polygonal patterns. Each of the central elements is disposed at a center of a respective one of the polygonal patterns. The periodic structure further includes a spacer medium that fills a space among the central element and the first surrounding elements of each of the polygonal patterns and that has a refractive index different from those of the central element and the first surrounding elements.04-30-2009
20090072262(Al,In,Ga,B)N DEVICE STRUCTURES ON A PATTERNED SUBSTRATE - A nitride light emitting diode, on a patterned substrate, comprising a nitride interlayer having at least two periods of alternating layers of In03-19-2009
20090072263Color Control By Alteration of Wavelength Converting Element - A light emitting device is produced by depositing a layer of wavelength converting material over the light emitting device, testing the device to determine the wavelength spectrum produced and correcting the wavelength converting member to produce the desired wavelength spectrum. The wavelength converting member may be corrected by reducing or increasing the amount of wavelength converting material. In one embodiment, the amount of wavelength converting material in the wavelength converting member is reduced, e.g., through laser ablation or etching, to produce the desired wavelength spectrum.03-19-2009
20090072261LIGHT EMITTING DIODE DEVICE - A light emitting diode device includes a substrate, a light emitting diode chip, a plurality of wires, a plurality of lead frames, an insulating body, an encapsulant and a lens. The light emitting diode chip is electrically connected with a lead frame and the substrate. The substrate is electrically connected with another lead frame. Hence, the length of the wires can be decreased, and the reliability of the light emitting diode device can be improved.03-19-2009
20090072260ORGANIC ELECTROLUMINESCENCE DEVICE AND METHOD FOR MANUFACTURING THE SAME - An organic electroluminescence device and a method for manufacturing the same are disclosed. The organic electroluminescence device includes a transparent substrate, a semiconductor layer including a source region, a channel region and a drain region, a gate insulating film having first contact holes on the source and drain regions and formed on the substrate including the semiconductor layer, a gate electrode formed on the gate insulating film above the channel region, an interlayer insulating film having second contact holes on the source and drain regions and formed on an entire surface of the gate insulating film including the gate electrode, and a source electrode and a drain electrode formed on the interlayer insulating film to be electrically connected to the source and drain regions through the first and second contact holes, wherein at least one of the source electrode and the drain electrode is formed to cover the semiconductor layer.03-19-2009
20090072259LIGHT-EMITTING DIODE APPARATUS AND MANUFACTURING METHOD THEREOF - A light-emitting diode (LED) apparatus includes a thermoconductive substrate, a thermoconductive adhesive layer, an epitaxial layer, a current spreading layer and a micro- or nano-roughing structure. The thermoconductive adhesive layer is disposed on the thermoconductive substrate. The epitaxial layer is disposed opposite to the thermoconductive adhesive layer and has a first semiconductor layer, an active layer and a second semiconductor layer. The current spreading layer is disposed between the second semiconductor layer of the epitaxial layer and the thermoconductive adhesive layer. The micro- or nano-roughing structure is disposed on the first semiconductor layer of the epitaxial layer. In addition, a manufacturing method of the LED apparatus is also disclosed.03-19-2009
20090072258ORGANIC LIGHT EMITTING DISPLAY AND METHOD OF MANUFACTURING THE SAME - An organic light emitting display includes an organic light emitting diode formed on a substrate, coupled to a transistor; a photodiode formed on the substrate and including a semiconductor layer including a high-concentration P doping region, an intrinsic region with defects and a high-concentration N doping region; and a controller that uniformly controls the luminance of light emitted from the organic light emitting diode by controlling a voltage applied to the first electrode and the second electrode according to the voltage outputted from the photodiode.03-19-2009
20090072256Light emitting diode package and method of manufacturing the same - Provided is a light emitting diode (LED) package including a phosphor substrate; an LED chip mounted on the phosphor substrate; a circuit board mounted on the other region of the phosphor substrate excluding the region where the LED chip is mounted; an electrode connection portion for electrically connecting the LED chip and the circuit board; and a sealing member that covers the LED chip, the circuit board, and the phosphor substrate.03-19-2009
20080272388Method for fabricating thin film pattern, device and fabricating method therefor, method for fabricating liquid crystal display, liquid crystal display, method for fabricating active matrix substrate, electro-optical apparatus, and electrical apparatus - A method for fabricating a thin film pattern on a substrate, includes the steps of: forming a concave part on the substrate that conforms to the thin film pattern; and applying a function liquid into the concave part.11-06-2008
20080265268Optoelectronic Component - An optoelectronic component is described, comprising a semiconductor body that emits electromagnetic radiation of a first wavelength when the optoelectronic component is in operation, and a separate optical element disposed spacedly downstream of the semiconductor body in its radiation direction. The optical element comprises at least one first wavelength conversion material that converts radiation of the first wavelength to radiation of a second wavelength different from the first.10-30-2008
20110089459OPTOELECTRONIC APPARATUS - An optoelectronic apparatus includes an optical device with an optical structure including a plurality of optical elements, and a radiation-emitting or radiation-receiving semiconductor chip with a contact structure which includes a plurality of contact elements that make electrical contact with the semiconductor chip and are spaced apart vertically from the optical structure, wherein the contact elements are arranged in interspaces between the optical elements upon a projection of the contact structure into the plane of the optical structure.04-21-2011
20090026482Optoelectronic Component - An optoelectronic component having a basic housing or frame and at least one semiconductor chip, specifically a radiation-emitting or-receiving semiconductor chip, in a cavity of the basic housing. In order to increase the efficiency of the optoelectronic component, reflectors are provided in the cavity in the region around the semiconductor chip. These reflectors are formed by virtue of the fact that a filling compound filled at least partly into the cavity is provided, the material and the quantity of the filling compound being chosen in such a way that the filling compound, on account of the adhesion force between the filling compound and the basic housing, assumes a form which widens essentially conically from bottom to top in the cavity, and the conical inner areas of the filling compound serve as reflector.01-29-2009
20090108283ILLUMINATION DEVICE AND METHOD FOR MANUFACTURING THE SAME - An illumination device includes a circuit board (04-30-2009
20090108282CHIP-TYPE LED AND METHOD FOR MANUFACTURING THE SAME - In a chip-type LED according to an embodiment of the present invention, a first recess hole for mounting an LED chip and a second recess hole for connecting a fine metal wire are formed in an insulating substrate, a metal sheet serving as a first wiring pattern is formed at a portion that includes the first recess hole, a metal sheet serving as a second wiring pattern is formed at a portion that includes the second recess hole, an LED chip is mounted on the metal sheet within the first recess hole, the LED chip is electrically connected to the metal sheet within the second recess hole via a fine metal wire, the LED chip including the first recess hole and the fine metal wire including the second recess hole are encapsulated in a first transparent resin that contains a fluorescent material, a surface of the insulating substrate including the first transparent resin is encapsulated in a second transparent resin.04-30-2009
20090108281Light emitting diode package and method for fabricating same - An LED package comprising a submount having a top and bottom surface with a plurality of top electrically and thermally conductive elements on its top surface. An LED is included on one of the top elements such that an electrical signal applied to the top elements causes the LED to emit light. The electrically conductive elements also spread heat from the LED across the majority of the submount top surface. A bottom thermally conductive element is included on the bottom surface of said submount and spreads heat from the submount, and a lens is formed directly over the LED. A method for fabricating LED packages comprising providing a submount panel sized to be separated into a plurality of LED package submounts. Top conductive elements are formed on one surface of the submount panel for a plurality of LED packages, and LEDs are attached to the top elements. Lenses are molded over the LEDs and the substrate panel is singulated to separate it into a plurality of LED packages.04-30-2009
20090108280PIXEL STRUCTURE AND FABRICATION METHOD THEREOF - A fabrication method of a pixel structure includes utilizing only a single photomask in two different lithographic processes for defining patterns of the source/drain and passivation layer respectively. Therefore, the total amount of photomasks of the fabrication process can be decreased.04-30-2009
20100301371LIGHT EMITTING DEVICE - A light emitting device can be characterized as including a light emitting diode configured to emit light and a phosphor configured to change a wavelength of the light. The phosphor substantially covers at least a portion of the light emitting diode. The phosphor includes a compound having a host material. Divalent copper ions and oxygen are components of the host material.12-02-2010
20100301360LIGHTING DEVICES WITH DISCRETE LUMIPHOR-BEARING REGIONS ON REMOTE SURFACES THEREOF - A lighting device includes a semiconductor light emitting device (LED) configured to emit light having a first peak wavelength upon the application of a voltage thereto, an element in adjacent, spaced-apart relationship with the LED, and a pattern of discrete lumiphor-containing regions on a surface of, or within, the element. The lumiphor-containing regions are configured to receive light emitted by the LED and convert at least a portion of the received light to light having a longer wavelength than the first peak wavelength. The remote element may be a lens, a reflective element, or a combination thereof.12-02-2010
20100295084Method of Fabricating Photoelectronic Device of Group III Nitride Semiconductor and Structure Thereof - A method of fabricating a photoelectric device of Group III nitride semiconductor comprises the steps of: forming a first Group III nitride semiconductor layer on a surface of an original substrate; forming a patterned epitaxial-blocking layer on the first Group III nitride semiconductor layer; forming a second Group III nitride semiconductor layer on the epitaxial-blocking layer and the first Group III nitride semiconductor layer not covered by the epitaxial-blocking layer and then removing the epitaxial-blocking layer; forming a third Group III nitride semiconductor layer on the second Group III nitride semiconductor layer; depositing or adhering a conductive layer on the third Group III nitride semiconductor layer; and releasing a combination of the third Group III nitride semiconductor layer and the conductive layer apart from the second Group III nitride semiconductor layer.11-25-2010
20100295081SINGLE OR MULTI-COLOR HIGH EFFICIENCY LIGHT EMITTING DIODE (LED) BY GROWTH OVER A PATTERNED SUBSTRATE - A single or multi-color light emitting diode (LED) with high extraction efficiency is comprised of a substrate, a buffer layer formed on the substrate, one or more patterned layers deposited on top of the buffer layer, and one or more active layers formed on or between the patterned layers, for example by Lateral Epitaxial Overgrowth (LEO), and including one or more light emitting species, such as quantum wells. The patterned layers include a patterned, perforated or pierced mask made of insulating, semiconducting or metallic material, and materials filling holes in the mask. The patterned layer acts as an optical confining layer due to a contrast of a refractive index with the active layer and/or as a buried diffraction grating due to variation of a refractive index between the mask and the material filling the holes in the mask.11-25-2010
20100295074Light-Emitting Component Having a Wavelength Converter and Production Method - A conversion layer (11-25-2010
20100295072Light-emitting diode - Disclosed is an improved light-emitting diode, which can be a PLCC or SMD type light-emitting diode. The light-emitting diode includes a package body, at least one pair of conductive terminals, and an optic lens. The package body has an end surface, a circumferential surface extending from the end surface, and a receptacle for accommodating a light-emitting chip. The pair of conductive terminals is fixed to the package body. The optic lens covers the end surface of the package body and is even expanded to cover the circumferential surface of the package body. In this way, effects of improved bonding strength, improved optic advantages, being easy to adjust to a desired angle with the optic lens, and alleviation of troubles caused by overflow of adhesive can be realized.11-25-2010
20100295077MANUFACTURE OF LIGHT EMITTING DEVICES WITH PHOSPHOR WAVELENGTH CONVERSION - A method of manufacturing a light emitting device: an LED wafer having an array of LEDs formed on a surface thereof, the method comprises: a) fabricating a sheet of phosphor/polymer material comprising a light transmissive polymer material having at least one phosphor material distributed throughout its volume and in which the polymer material is transmissive to light generated by the LEDs and to light generated by the at least one phosphor material; b) selectively making apertures through the phosphor/polymer sheet at positions corresponding to electrode contact pads of the LEDs of the LED wafer; c) attaching the sheet of phosphor/polymer material to the surface of the LED wafer such that each aperture overlies a respective electrode contact pad; and d) dividing the wafer into individual light emitting devices. The method can further comprise, prior to dividing the LED wafer, cutting slots through the phosphor/polymer material that are configured to pass between individual LEDs.11-25-2010
20100295078MANUFACTURE OF LIGHT EMITTING DEVICES WITH PHOSPHOR WAVELENGTH CONVERSION - A method of manufacturing a light emitting device comprises: a) depositing over substantially the entire surface of a LED diode wafer having an array of LEDs formed on a surface thereof a mixture of at least one phosphor material and a polymer material, wherein the polymer material is transmissive to light generated by the LEDs and to light generated by the at least one phosphor material; b) mechanically stamping the phosphor/polymer mixture with a stamp having features configured such as to form passages in the phosphor/polymer corresponding to electrode contact pads of each LED thereby enabling access to each electrode contact pad; c) curing the polymer; d) removing the stamp; and e) dividing the LED wafer into individual light emitting devices. The stamp comprises a dissolvable material (polyvinyl alcohol) and the stamp is removed by dissolving it using a solvent (e.g. water).11-25-2010
20100295083SUBSTRATES FOR MONOLITHIC OPTICAL CIRCUITS AND ELECTRONIC CIRCUITS - A multilayer wafer structure containing a silicon layer that contains at least one waveguide, an insulating layer and a layer that is lattice compatible with Group III-V compounds, with the lattice compatible layer in contact with one face of the insulating layer, and the face of the insulating layer opposite the lattice compatible layer is in contact with the silicon layer. The silicon and insulating layers contain either or both of at least one continuous cavity filled with materials such as to constitute a photodetector zone, or at least one continuous cavity filled with materials such as to constitute a light source zone.11-25-2010
20100295082Light emitting package and light emitting package array - Example embodiments may include a light emitting device package. The light emitting device package may include a light emitting device, a package body-including a cavity having a bottom surface on which the light emitting device is mounted and a side surface for reflecting light emitted from the light emitting device, a first electrode protruding from the package body, and a second electrode coupled with the package body. The first and second electrodes may be designed to couple respectively with the second and first electrodes of another light emitting device package, thereby forming an array of light emitting device packages.11-25-2010
20100295080LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE HAVING THE SAME - A light emitting device may comprise a first semiconductor layer having a first and second surfaces, the first and second surfaces being opposite surfaces, the first semiconductor layer having a plurality of semiconductor columns extending from the second surface, the plurality of semiconductor columns being separated from each other; a light emitting structure formed over the first semiconductor layer, the light emitting structure including a first conductive semiconductor layer, an active layer and a second semiconductor layer, the light emitting structure having a side surface and an exposed side surface of a semiconductor column closest to the side surface of the light emitting structure being non-aligned with the side surface of the light emitting structure; and a substrate provided adjacent to the plurality of semiconductor columns.11-25-2010
20100295076Semiconductor Component Emitting Polarized Radiation - A semiconductor component emits polarized radiation with a first polarization direction. The semiconductor component includes a chip housing, a semiconductor chip and a chip-remote polarizing filter.11-25-2010
20100295075DOWN-CONVERTED LIGHT EMITTING DIODE WITH SIMPLIFIED LIGHT EXTRACTION - A wavelength converted light emitting diode (LED) device has an LED having an output surface. A multilayer semiconductor wavelength converter is optically bonded to the LED. At least one of the LED and the wavelength converter is provided with light extraction features.11-25-2010
20100308355LIGHT-EMITTING DEVICE HAVING A THINNED STRUCTURE AND THE MANUFACTURING METHOD THEREOF - A semiconductor light-emitting device having a thinned structure comprises a thinned structure formed between a semiconductor light-emitting structure and a carrier. The manufacturing method comprises the steps of forming a semiconductor light-emitting structure above a substrate; attaching the semiconductor light-emitting structure to a support; thinning the substrate to form a thinned structure; forming or attaching a carrier to the thinned substrate; and removing the support.12-09-2010
20100301358Semiconductor Substrate, Electronic Device, Optical Device, and Production Methods Therefor - The present invention provides a method for producing a semiconductor substrate, the method including reacting nitrogen (N) with gallium (Ga), aluminum (Al), or indium (In), which are group III elements, in a flux mixture containing a plurality of metal elements selected from among alkali metals and alkaline earth metals, to thereby grow a group III nitride based compound semiconductor crystal. The group III nitride based compound semiconductor crystal is grown while the flux mixture and the group III element are mixed under stirring. At least a portion of a base substrate on which the group III nitride based compound semiconductor crystal is grown is formed of a flux-soluble material, and the flux-soluble material is dissolved in the flux mixture, at a temperature near the growth temperature of the group III nitride based compound semiconductor crystal, during the course of growth of the semiconductor crystal.12-02-2010
20130134469SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor light emitting device includes a stacked structural body, a first, a second and a third conductive layer. The stacked structural body includes first and second semiconductors and a light emitting layer provided therebetween. The second semiconductor layer is disposed between the first conductive layer and the light emitting layer. The first conductive layer is transparent. The first conductive layer has a first major surface on a side opposite to the second semiconductor layer. The second conductive layer is in contact with the first major surface. The third conductive layer is in contact with the first major surface and has a reflectance higher than a reflectance of the second conductive layer. The third conductive layer includes an extending part extending in parallel to the first major surface. At least a portion of the extending part is not covered by the second conductive layer.05-30-2013
20100301357Light emitting element - The present invention discloses a light emitting element including a carrier, at least one light emitting chip, an adhesive and a first encapsulated layer. The light emitting chip is fixed onto the carrier by the adhesive, and most of the carrier and adhesive are made of a light absorbing material, so that the external luminescence quantum efficiency of the light emitting element is poor. The invention adopts a first encapsulated layer disposed on the carrier to cover the light absorbing material including the adhesive or carrier, so as to reduce the light absorption and improve the external luminescence quantum efficiency of the light emitting element.12-02-2010
20110248303METHOD FOR PREPARING A B-SiAION PHOSPHOR - There is provided a method for preparing a β-SiAlON phosphor capable of be controlled to show characteristics such as high brightness and desired particle size distribution. The method for preparing a β-SiAlON phosphor represented by Formula: Si10-13-2011
20110248302LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE - A light emitting device according to the embodiment includes a first electrode; a light emitting structure including a first semiconductor layer, an active layer and a second semiconductor layer on the first electrode; a second electrode on the light emitting structure; and a control switch installed on the light emitting structure to control the light emitting structure.10-13-2011
20100308358LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM HAVING THE SAME - Embodiments relate to a light emitting device and a light emitting device package having the same. The light emitting device a light emitting structure including a first conductive type semiconductor layer including a first semiconductor layer and a second semiconductor layer under the first semiconductor layer, an active layer under the second semiconductor layer, and a second conductive type semiconductor layer under the active layer; an electrode layer under the second conductive type semiconductor layer; a first insulating layer on a periphery between the first semiconductor layer and the second semiconductor layer; and a second insulating layer under the first insulating layer, the second insulating layer covering a periphery of the second semiconductor layer, the active layer and the second conductive type semiconductor layer.12-09-2010
20100308361Wavelength conversion chip for use with light emitting diodes and method for making same - A wavelength conversion chip is formed by depositing a wavelength conversion material on a substrate to form a layer, removing the resulting wavelength conversion layer from the substrate and then segmenting the wavelength conversion layer into a plurality of wavelength conversion chips. The wavelength conversion material can be annealed by thermal annealing or radiation annealing to increase the wavelength conversion efficiency of the chips or to sinter the wavelength conversion material to form a ceramic material. Optical coatings, vias, light extraction elements, electrical connections or electrical bond pads can be fabricated on the wavelength conversion chips.12-09-2010
20100308363LIGHT EMITTING DEVICE HAVING LIGHT EXTRACTION STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A light emitting device having a light extraction structure, which is capable of achieving an enhancement in light extraction efficiency and reliability, and a method for manufacturing the same. The light emitting device includes a semiconductor layer having a multi-layered structure including a light emission layer; and a light extraction structure formed on the semiconductor layer in a pattern having unit structures. Further, the wall of each of the unit structures is sloped at an angle of −45° to +45° from a virtual vertical line being parallel to a main light emitting direction of the light emitting device.12-09-2010
20100301367LIGHT-EMITTING DEVICE COMPRISING A DOME-SHAPED CERAMIC PHOSPHOR - Some embodiments provide a light-emitting device comprising: a light-emitting diode; a substantially transparent encapsulating material having a refractive index in the range of about 1.3 to about 1.8; a layer of low refractive index material having a refractive index in the range of about 1 to about 1.2; and a translucent ceramic phosphor having a refractive index in the range of about 1.6 to about 2.7, and is substantially dome-shaped with substantially uniform thickness. Some embodiments provide a light-emitting device comprising: a substrate; a light-emitting diode mounted on a surface of the substrate; and a substantially hemispheric cover mounted on the surface of the substrate so as to enclose the light emitting diode; wherein the substantially hemispheric cover comprises an outer layer, a middle layer, and an inner layer arranged concentrically, with the inner layer being nearest the light-emitting diode.12-02-2010
20100301372POWER SURFACE MOUNT LIGHT EMITTING DIE PACKAGE - A light emitting die package includes a substrate, a reflector plate, and a lens. The substrate has traces for connecting an external electrical power source to a light emitting diode (LED) at a mounting pad. The reflector plate is coupled to the substrate and substantially surrounds the mounting pad, and includes a reflective surface to direct light from the LED in a desired direction. The lens is free to move relative to the reflector plate and is capable of being raised or lowered by the encapsulant that wets and adheres to it and is placed at an optimal distance from the LED chip(s). Heat generated by the LED during operation is drawn away from the LED by both the substrate (acting as a bottom heat sink) and the reflector plate (acting as a top heat sink).12-02-2010
20110127558LIGHT EMITTING DIODE PACKAGE AND METHOD OF MANUFACTURING THE SAME - There is provided a light emitting diode package and a method of manufacturing the same. A light emitting diode package according to an aspect of the invention may include: an LED chip; a body part having the LED chip mounted thereon; a pair of reflective parts extending from the body part to face each other while interposing the LED chip therebetween, and reflecting light emitted from the LED chip; and a molding part provided between the pair of reflective parts to encapsulate the LED chip and having a top surface whose central region is curved inwards.06-02-2011
20120068209Semiconductor Light Emitting Devices with Optical Coatings and Methods of Making Same - A method of making a semiconductor light emitting device having one or more light emitting surfaces includes positioning a stencil on a substrate such that a chip disposed on the substrate is positioned within an opening in the stencil. Phosphor-containing material is deposited in the opening to form a coating on one or more light emitting surfaces of the chip. The opening may or may not substantially conform to a shape of the chip. The phosphor-containing material is cured with the stencil still in place. After curing, the stencil is removed from the substrate and the coated chip is separated from the substrate. The chip may then be subjected to further processing.03-22-2012
20100308360Nitride semiconductor light emitting device - A nitride semiconductor light emitting device includes a first coat film of aluminum nitride or aluminum oxynitride formed at a light emitting portion and a second coat film of aluminum oxide formed on the first coat film. The thickness of the second coat film is at least 80 nm and at most 1000 nm. Here, the thickness of the first coat film is preferably at least 6 nm and at most 200 nm.12-09-2010
20100308357SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME - A light-emitting element (12-09-2010
20100308365COMPOUND SEMICONDUCTOR LIGHT EMITTING DIODE - Disclosed is a compound semiconductor light emitting diode 12-09-2010
20100314651THIN-FILM LED WITH P AND N CONTACTS ELECTRICALLY ISOLATED FROM THE SUBSTRATE - A thin-film LED includes an insulating substrate, an electrode on the insulating substrate, and an epitaxial structure on the electrode.12-16-2010
20090078956PACKAGE STRUCTURE OF PHOTOELECTRONIC DEVICE AND FABRICATING METHOD THEREOF - A package structure for photoelectronic devices comprises a silicon substrate, a first insulating layer, a reflective layer, a second insulating layer, a first conductive layer, a second conductive layer and a die. The silicon substrate has a first surface and a second surface, wherein the first surface is opposed to the second surface. The first surface has a reflective opening, and the second surface has at least two electrode via holes connected to the reflective opening and a recess disposed outside the electrode via holes. The first insulating layer overlays the first surface, the second surface and the recesses. The reflective layer is disposed on the reflective opening. The second insulating layer is disposed on the reflective layer. The first conductive layer is disposed on the surface of the second insulating layer. The second conductive layer is disposed on the surface of the second surface and inside the electrode via holes. The die is fixed inside the reflective opening and electrically connected to the first conductive layer.03-26-2009
20110127559LIGHT EMISSION DEVICE PACKAGE AND METHOD OF FABRICATING THE SAME - A light emission device package including a substrate, an opening portion on the substrate, a heat radiation frame on the opening portion, the heat radiation frame protruding from the substrate, a light emission device chip on the heat radiation frame, and a sealant member on the light emission device chip.06-02-2011
20110127555SOLID STATE LIGHT EMITTER WITH PHOSPHORS DISPERSED IN A LIQUID OR GAS FOR PRODUCING HIGH CRI WHITE LIGHT - A solid state white light emitting device includes a semiconductor chip for producing electromagnetic energy and may additionally include a reflector forming an optical integrating cavity. Phosphors, such as semiconductor nanophosphors dispersed in a light transmissive liquid or gas material, within the chip packaging of the solid state device itself, are excitable by the energy from the chip. The device produces output light that is at least substantially white and has a color rendering index (CRI) of 75 or higher. The white light output of the device may exhibit color temperature in one of the following specific ranges along the black body curve: 2,725±145° Kelvin; 3,045±175° Kelvin; 3,465±245° Kelvin; 3,985±275° Kelvin; 4,503±243° Kelvin; 5,028±283° Kelvin; 5,665±355° Kelvin; and 6,530±510° Kelvin.06-02-2011
20110127552LIGHT OUTPUT DEVICE - The present invention relates to a light output device (06-02-2011
20090242919LIGHT EMITTING DEVICE - A light emitting device includes a leadframe, a light emitting unit, a transparent encapsulant, and a fluorescent colloid layer. The light emitting unit is disposed on the leadframe. The transparent encapsulant covers the light emitting unit, wherein the transparent encapsulant has a concave on which at least one reflective surface is disposed. The fluorescent colloid layer is disposed outside the transparent encapsulant, wherein a chamber is formed between the fluorescent colloid layer and the transparent encapsulant. The light generated by the light emitting unit is reflected by the reflective surface and guided to a side wall of the fluorescent colloid layer.10-01-2009
20110001161LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME, AND LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE LIGHT EMITTING DEVICE - Disclosed are a light emitting diode, a method of manufacturing the same, a light emitting device and a method of manufacturing the same. The light emitting device includes a circuit board formed with a first conductive pattern and a second conductive pattern electrically isolated from the first conductive pattern; a light emitting diode electrically connected to the first and second conductive patterns on the circuit board; a first molding member surrounding the light emitting diode; and a second molding member on the first molding member. The light emitting diode includes a conductive support substrate, a reflective electrode layer having a convex center portion on the conductive support substrate, a protective layer on a peripheral portion of the reflective electrode layer, a second conductive semiconductor layer on the reflective layer and the protective layer, an active layer on the second conductive semiconductor layer, a first conductive semiconductor layer on the active layer, and a first electrode layer on the first conductive semiconductor layer.01-06-2011
20110001157LIGHT EMITTING MODULE WITH OPTICALLY-TRANSPARENT THERMALLY-CONDUCTIVE ELEMENT - A light emitting module with improved optical functionality and reduced thermal resistance is described, which comprises a light emitting device (LED), a wavelength converting (WC) element and an inorganic optically-transmissive thermally-conductive (OTTC) element. The WC element is capable of absorbing light generated from the LED at a specific wavelength and re-emitting light having a different wavelength. The re-emitted light and any unabsorbed light exits through at least one surface of the module. The OTTC is in physical contact with the WC element and at least partially located in the optical path of the light. The OTTC comprises one or more layers of inorganic material having a thermal conductivity greater than that of the WC element. As such, a compact unitary integrated module is provided with excellent thermal characteristics, which may be further enhanced when the OTTC provides a thermal barrier for vertical heat propagation through the module but not lateral propagation.01-06-2011
20110001158III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - The present disclosure relates to a Ill-nitride semiconductor light emitting device, comprising: a substrate with a plurality of protrusions formed thereon, each of the plurality of protrusions having three acute portions and three obtuse portions; and a plurality of Ill-nitride semiconductor layers formed over the substrate and including an active layer for generating light by recombination of electrons and holes.01-06-2011
20110001150LIGHT EMITTING DIODE AND METHOD FOR FABRICATING THEREOF - The present invention provides a light-emitting diode (LED) and a method for manufacturing said LED. The LED is characterized that, the silica gel as the interlayer is provided between the transparent organic material and the chip. The method for manufacturing is characterized that, a gel applying step for applying the silica gel and the solidifying step for solidifying the semi-finished product of LED applied with the silica gel are included prior to the material packaging step for packaging using the transparent organic material. The LED of this invention and the LED manufactured by the method of this invention have no light decay for the low-power, such as Ø5 mm or less LED, and little light decay for the high-power LED, and have the advantages of excellent weathering resistance and low production cost.01-06-2011
20110001155LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A method of fabricating a light emitting device comprising: providing a substrate, wherein the substrate comprises a first major surface and a second major surface opposite to the first major surface, forming a plurality of light emitting stack layers on the first major surface, forming an etching protection layer on the plurality of light emitting stack layers, forming a plurality of discontinuous holes or continuous lines on the substrate by a laser beam with the depth of 10˜150 μm, cleaving the substrate through the plurality of discontinuous holes or continuous lines, providing a adhesion layer on the second major surface of the substrate, and expanding the adhesion layer to form a plurality of separated light emitting device.01-06-2011
20110001156LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - A light emitting device includes: a substrate; an LED chip provided on a main surface of the substrate; and a printed resistor element connected in parallel with the LED chip, the printed resistor element being provided in at least one of regions (i) on the main surface of the substrate, (ii) on a back surface of the substrate, and (iii) inside the substrate. According to the arrangement, it is possible to provide: a light emitting device which can emit light having preferable luminance without a reduction in optical output by suppressing light shielding and light absorption of light emitted from the LED toward the outside; and a method for manufacturing the light emitting device.01-06-2011
20110108874Method to Provide Microstructure for Encapsulated Hgh-Brightness LED Chips - Encapsulated LEDs can be made by taking a mold tool defining a cavity that defines a lens shape and providing a patterned release film defining the inverse of a microstructure in a surface of the film. The patterned release film is conformed to the cavity of the mold tool. An LED chip is placed in a spaced relationship from the patterned release film in the cavity. A resin is then introduced into the space between the LED chip and the patterned release film in the cavity. The resin is cured in the space between the LED chip and the patterned release film in the cavity while contact is maintained between the patterned release film and the curing resin. The encapsulated LED is then freed from the mold tool and the patterned release film.05-12-2011
20110108867LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - The embodiment is to provide a light emitting device and a method for manufacturing the same, in which the light emitting device includes a first conductive semiconductor layer; an active layer formed on the first conductive semiconductor layer; a second conductive semiconductor layer formed on the active layer; and a phosphor layer formed on the second conductive semiconductor layer; in which the phosphor layer includes a phosphor receiving member including a plurality of cavities and phosphor particles fixed in the cavities.05-12-2011
20110108866LED PACKAGE AND METHOD FOR FABRICATING THE SAME - An LED package is disclosed herein. The disclosed LED package comprises a base having an LED chip mounted thereon, an encapsulation member formed by a light-transmittable resin to encapsulate the LED chip, and a housing formed to expose a top portion of the encapsulation member and to encompass a side surface of the encapsulation member, wherein the encapsulation member is formed by a transfer molding process using a mold to have a predetermined shape. Further, the housing may be light-transmittable.05-12-2011
20110006323LIGHTING DEVICE - A lighting device comprising an LED chip having a light emitting surface, and being configured to emit a light from the light emitting surface, a mounting substrate being configured to mount the LED chip, a first color conversion member comprising a first light transmissive material and a first phosphor, the first phosphor being excited by the light which is emitted from the LED chip, thereby giving off a first light having a wavelength which is longer than a wavelength of the light emitted from the LED chip, the first color conversion member being directly disposed on the light emitting surface of the LED chip, a second color conversion member comprising a second light transmissive material and a second phosphor, the second phosphor being excited by the light which is emitted from the LED chip, thereby giving off a second light having a wavelength which is longer than the wavelength of the light emitted from the LED chip, the second color conversion member being shaped to have a dome-shape, wherein the LED chip and the first color conversion member are disposed between the mounting substrate and the second color conversion member.01-13-2011
20100193819LIGHT-EMITTING SURFACE ELEMENT AND METHOD FOR PRODUCING A LIGHT-EMITTING SURFACE ELEMENT - A light-emitting surface element includes a connection device, a light-generating element having at least two electrical connections electrically conductively connected to assigned connection lines on the connection device, and at least one planar light-guiding element formed by injection-molding in a manner at least partly embedding an arrangement composed of connection device and light-generating element in the planar light-guiding element.08-05-2010
20110024780ORGANIC LIGHT EMITTING DIODE DISPLAY - An organic light emitting diode includes a display substrate assembly including an organic light emitting element; an encapsulation substrate assembly disposed on the display substrate assembly with a space therebetween and sealed with the display substrate assembly in a vacuum-tight manner; and a filling agent filling the space between the display substrate assembly and the encapsulation substrate assembly. The filling agent is adapted to selectively absorb external light entering through the encapsulation substrate assembly and incident on the organic light emitting element as a function of wavelength in a wavelength band of the external light to control transmittance.02-03-2011
20110012153Light emitting package and methods of fabricating the same - Example embodiments are directed to a light emitting package having a structure that prevents variance in a depth of a cavity in which a chip is mounted and a method of fabricating the same. A light emitting package includes a package body including a first body including the cavity and a second body bonded to the first body. The cavity penetrates the first body. A first electrode and a second electrode separate from each other are on the package body. A first dielectric layer is between the package body and the first electrode and between the package body and the second electrode. A light emitting element is placed in the cavity and electrically connected to the first electrode and the second electrode. A method of fabricating the light emitting package includes forming the first body and the second body bonded to the first body through a dielectric layer, forming the cavity in the first body and forming the light emitting element in the cavity.01-20-2011
20100133573LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, LIGHTING DEVICE, AND ELECTRONIC DEVICE - An object is to provide a light-emitting element which exhibits light emission with high luminance and can be driven at low voltage. Another object is to provide a light-emitting device or an electronic device with reduced power consumption. Between an anode and a cathode, n (n is a natural number of two or more) EL layers are provided, where between a first EL layer and a second EL layer, a first layer containing any of an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal compound, an alkaline earth metal compound, and a rare earth metal compound, a second layer containing a material having a high electron-transporting property in contact with the first layer, and a region containing a material having a high hole-transporting property and an acceptor material in contact with the second layer are provided in this order from the anode side.06-03-2010
20100133572DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A display device is provided which includes: lower electrodes each have a light-reflective first metal material layer and a second metal material layer provided thereon which has a superior alkaline-solution resistance to that of the first metal material layer; an insulating pattern which is formed from a photosensitive composition material, which has opening portions to expose the lower electrodes, and which covers peripheries of the lower electrodes; organic layers each of which at least include an organic light emitting layer and which are provided in the opening portions so as to cover the lower electrodes; and a light-transmissive upper electrode provided to sandwich the organic layers with the lower electrodes.06-03-2010
20100133571LIGHT-EMITTING DEVICE - To provide a light emitting device easy to produce and extracting light to its outside with high efficiency, the light-emitting device 06-03-2010
20100133566Opto-Electrical Devices and Methods of Making the Same - An opto-electrical device comprising: a first electrode for injecting charge carriers of a first polarity; a second electrode for injecting charge carriers of a second polarity; and a layer of organic material disposed between the first and second electrodes, the layer of organic material comprising a blend of a first charge transporting and/or light-emissive polymer and a second charge transporting and/or light-emissive polymer, wherein at least the first polymer is cross-linked providing a first cross-linked matrix in which the second polymer is disposed.06-03-2010
20100133567SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor light emitting device and a method of manufacturing the same are provided. The semiconductor light emitting device comprises a first conductive semiconductor layer comprising a concave portion, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer.06-03-2010
20110241055OPTICAL SEMICONDUCTOR ELEMENT MOUNTING PACKAGE, AND OPTICAL SEMICONDUCTOR DEVICE USING THE SAME - An optical semiconductor element mounting package that has good adhesion between the resin molding and the lead electrodes and has excellent reliability is provided, as well as an optical semiconductor device using the package is also provided. The optical semiconductor element mounting package having a recessed part that serves as an optical semiconductor element mounting region, wherein the package is formed by integrating: a resin molding composed of a thermosetting light-reflecting resin composition, which forms at least the side faces of the recessed part; and at least a pair of positive and negative lead electrodes disposed opposite each other so as to form part of the bottom face of the recessed part, and there is no gap at a joint face between the resin molding and the lead electrodes.10-06-2011
20110241049SUBSTRATE FOR MOUNTING LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING DEVICE EMPLOYING THE SUBSTRATE - To provide a substrate for mounting a light-emitting element, which is provided with a reflection layer having a high optical reflectance and being less susceptible to deterioration of the reflectance due to corrosion and which has an improved light extraction efficiency and heat dissipation property, and a light-emitting device employing such a substance.10-06-2011
20110241043SUBSTRATE FOR LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING DEVICE EMPLOYING IT - Provided is a substrate for light-emitting element, which has a simple structure and nevertheless is capable of obtaining a high light extraction efficiency when a light-emitting element is mounted thereon.10-06-2011
20090001398Semiconductor light emitting device and method of manufacturing the same - There are provided a semiconductor light emitting device that can be manufactured by a simple process and has excellent light extraction efficiency and a method of manufacturing a semiconductor light emitting device that has high reproducibility and high throughput. A semiconductor light emitting device having a substrate and a lamination in which a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer are sequentially laminated onto the substrate according to an aspect of the invention includes a silica particle layer; and an uneven part formed at a lower part of the silica particle layer.01-01-2009
20110024784LIGHT-EMITTING ELEMENT - Disclosed is a light emitting device. The light emitting device includes a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, a passivation layer surrounding the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer, a first light extracting structure layer having a concave-convex structure on the passivation layer, a first electrode layer electrically connected to the first conductive semiconductor layer through the passivation layer and the first light extracting structure layer, and a second electrode layer electrically connected to the second conductive semiconductor layer through the passivation layer and the light extracting structure layer.02-03-2011
20110241051Organic Electroluminescent Device - An organic electroluminescent device comprising: a substrate; a first electrode disposed over the substrate for injecting charge of a first polarity; a second electrode disposed over the first electrode for injecting charge of a second polarity opposite to said first polarity; an organic light emitting layer disposed between the first and the second electrode, the second electrode being transparent to light emitted by the light emitting layer; and a transparent encapsulant disposed over the second electrode, wherein the transparent encapsulant comprises a microlens array formed by a top surface of the transparent encapsulant and a diffraction grating formed by a bottom surface of the transparent encapsulant.10-06-2011
20110018019SEMICONDUCTOR CHIP PACKAGE STRUCTURE FOR ACHIEVING FLIP-CHIP TYPE ELECTRICAL CONNECTION WITHOUT USING WIRE-BONDING PROCESS AND METHOD FOR MAKING THE SAME - A semiconductor chip package structure for achieving flip-chip electrical connection without using a wire-bonding process includes a package unit, a semiconductor chip, a first insulative layer, first conductive layers, a second insulative layer, and second conductive layers. The package unit has a receiving groove. The semiconductor chip is received in the receiving groove and has a plurality of conductive pads disposed on its top surface. The first insulative layer is formed between the conductive pads to insulate the conductive pads. The first conductive layers are formed on the first insulative layer and the package unit, and one side of each first conductive layer is electrically connected to the corresponding conductive pad. The second insulative layer is formed between the first conductive layers in order to insulate the first conductive layers from each other. The second conductive layers are respectively formed on the other opposite sides of the first conductive layers.01-27-2011
20110018018SEMICONDUCTOR CHIP PACKAGE STRUCTURE FOR ACHIEVING ELECTRICAL CONNECTION WITHOUT USING WIRE-BONDING PROCESS AND METHOD FOR MAKING THE SAME - A semiconductor chip package structure for achieving electrical connection without using wire-bonding process includes an insulative substrate unit, a package unit, a semiconductor chip, a first conductive unit, an insulative unit and a second conductive unit. The package unit is disposed on the insulative substrate unit to form a receiving groove. The semiconductor chip is received in the receiving groove. The semiconductor chip has a plurality of conductive pads. The first conductive unit has a plurality of first conductive layers formed on the package body, and one side of each first conductive layer is electrically connected to each conductive pad. The insulative unit has an insulative layer formed between the first conductive layers in order to insulate the first conductive layers from each other. The second conductive unit has a plurality of second conductive layers respectively formed on another sides of the first conductive layers.01-27-2011
20110018022SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light-emitting device of the present invention includes: a substrate (01-27-2011
20110018021LIGHT EMITTING DEVICE PACKAGE AND METHOD FOR FABRICATING THE SAME - Disclosed are a light emitting device package and a method for fabricating the same. The light emitting device package includes: a trench formed in a substrate; a light emitting structure which is directly grown on a first area of the trench in the substrate; an electrode on the substrate; a wire bonding connecting the electrode with the light emitting structure; and01-27-2011
20110018020SIDE EMITTING DEVICE WITH WAVELENGTH CONVERSION - A side-emitting light emitting device (01-27-2011
20110018015CONTACT FOR A SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor structure includes a light emitting layer disposed between an n-type region and a p-type region. A p-electrode is disposed on a portion of the p-type region. The p-electrode includes a reflective first material in direct contact with a first portion of the p-type region and a second material in direct contact with a second portion of the p-type region adjacent to the first portion. The first material and second material are formed in planar layers of substantially the same thickness.01-27-2011
20110018017LED WITH MOLDED REFLECTIVE SIDEWALL COATING - A submount wafer, having mounted on it an array of LEDs with a phosphor layer, is positioned with respect to a mold having an array of indentions. A mixture of silicone and 10%-50%, by weight, TiO01-27-2011
20110108875LIGHT-EMITTING DEVICE AND METHOD FOR PRODUCING SAME - There is provided a light emitting device highly resistant to the environment, and having good heat resistance, light resistance and gas barrier property, and a method for producing same. With the light emitting device, a substrate 05-12-2011
20110108872LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE - A light emitting device according to the embodiment includes a substrate; a buffer layer over the substrate; an electrode including a perforation pattern through top and bottom surfaces of the electrode over the buffer layer; a first semiconductor layer over the electrode; an active layer over the first semiconductor layer; and a second semiconductor layer over the active layer. The first semiconductor layer extends onto a top surface of the perforation pattern by passing through the perforation pattern while making contact with the buffer layer.05-12-2011
20110108873LIGHT EMITTING DIODE STRUCTURE UTILIZING ZINC OXIDE NANOROD ARRAYS ON ONE OR MORE SURFACES, AND A LOW COST METHOD OF PRODUCING SUCH ZINC OXIDE NANOROD ARRAYS - A method of fabricating a Light Emitting Diode with improved light extraction efficiency, comprising depositing a plurality of Zinc Oxide (ZnO) nanorods on one or more surfaces of a III-Nitride based LED, by growing the ZnO nanorods from an aqueous solution, wherein the surfaces are different from c-plane surfaces of III-Nitride and transmit light generated by the LED.05-12-2011
20110108871EDGE LED PACKAGE - An edge LED package includes a base, an LED die and a reflective cup. The LED die is located on a surface of the base. The reflective cup includes an inner sidewall surrounding the LED die. The inner sidewall inclines outward from the base to form an included angle from 140 to 150°. The depth of the reflective cup, measured vertically from top of the reflective cup to the bottom, is about 0.25 mm to 0.3 mm. The area ratio between the opening area of the reflective cup and the base area surrounded by the reflective cup is about 1.5 to 2.05-12-2011
20110108869LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM - Embodiments relate to a light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises: a light emitting structure including a first conductive type semiconductor layer, an active layer over the first conductive type semiconductor layer, and a second conductive type semiconductor layer over the active layer; a dielectric layer formed in each of a plurality of cavities defined by removing a portion of the light emitting structure; and a second electrode layer over the dielectric layer.05-12-2011
20110108868LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM - A light emitting device according to an embodiment includes a first conductive semiconductor layer; a second conductive semiconductor layer; and an active layer including first and second active layers between the first and second conductive semiconductor layers. The first active layer emits light having a first wavelength band of 440 nm to 500 nm, and the second active layer emits light having a second wavelength band, which is shorter than the first wavelength band.05-12-2011
20110108865SILICONE BASED REFLECTIVE UNDERFILL AND THERMAL COUPLER - In one embodiment, a flip chip LED is formed with a high density of gold posts extending from a bottom surface of its n-layer and p-layer. The gold posts are bonded to submount electrodes. An underfill material is then molded to fill the voids between the bottom of the LED and the submount. The underfill comprises a silicone molding compound base and about 70-80%, by weight, alumina (or other suitable material). Alumina has a thermal conductance that is about 25 times better than that of the typical silicone underfill, which is mostly silica. The alumina is a white powder. The underfill may also contain about 5-10%, by weight, TiO05-12-2011
20110001160SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING ROUGHNESS LAYER - A semiconductor light emitting device includes a substrate, a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, and a roughness layer on the second conductive semiconductor layer. The second conductive semiconductor layer includes a shape of multiple horns, and the roughness layer includes a shape of multiple horns. The second conductive semiconductor layer includes a roughness in which horn shapes and inverse-horn-shaped shapes are alternately formed, and the roughness has a height of about 0.5 μm to about 1.2 μm and a diameter of about 0.3 μm to about 1.0 μm.01-06-2011
20110024782LOW OPTICAL LOSS ELECTRODE STRUCTURES FOR LEDS - An electrode structure is disclosed for enhancing the brightness and/or efficiency of an LED. The electrode structure can have a metal electrode and an dielectric material formed intermediate the electrode and a light emitting semiconductor material. Electrical continuity between the semiconductor material and the metal electrode is provided by an optically transmissive ohmic contact layer, such as a layer of Indium Tin Oxide. The metal electrode thus can be physically separated from the semiconductor material by one or more of the dielectric material and the ohmic contact layer. The dielectric layer can increase total internal reflection of light at the interface between the semiconductor and the dielectric layer, which can reduce absorption of light by the electrode. Such LED can have enhanced utility and can be suitable for uses such as general illumination.02-03-2011
20090065794Light emitting diode device and manufacturing method therof - A light-emitting diode (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first type conductivity semiconductor layer, an active layer, a second type conductivity semiconductor layer, a transparent conductive oxide stack structure, a first electrode, and a second electrode. The first semiconductor layer on the substrate has a first portion and a second portion. The active layer and the second semiconductor layer are subsequently set on the first portion. The transparent conductive oxide stack structure on the second semiconductor layer has at least two resistant interfaces. The first electrode is above the second portion, and the second electrode is above the transparent conductive oxide stack structure.03-12-2009
20120032215SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device of one embodiment includes: a substrate; an n-type layer of an n-type nitride semiconductor on the substrate; an active layer of a nitride semiconductor on the n-type semiconductor layer; a p-type layer of a p-type nitride semiconductor on the active layer. The p-type layer has a ridge stripe shape. The device has an end-face layer of a nitride semiconductor formed on an end face of the n-type semiconductor layer, the active layer, and the p-type semiconductor layer. The end face is perpendicular to an extension direction of the ridge stripe shape. The end-face layer has band gap wider than the active layer. The end-face layer has Mg concentration in the range of 5E16 atoms/cm02-09-2012
20110031520LIGHT EMITTING MODULE - A light emitting module includes: a light emitting element including: a first light emitting surface, and second light emitting surfaces bordering the first light emitting surface; an optical wavelength conversion member that converts a wavelength of light emitted from the light emitting element, wherein the optical wavelength conversion member is plate-shaped and is disposed such that an incident surface of the optical wavelength conversion member faces the first light emitting surface; and a reflecting member disposed to face the incident surface of the optical wavelength conversion member, the reflecting member comprising a reflecting surface. The reflecting surface faces the second light emitting surfaces, and the reflecting surface is inclined such that a distance between the reflecting surface and the second light emitting surfaces is gradually increased toward the incident surface of the optical wavelength conversion member.02-10-2011
20120032217WHITE LED DEVICE AND MANUFACTURING METHOD THEREOF - The invention provides a white light emitting diode device, which includes: a conductive substrate; a multilayered light emitting semiconductor epitaxial structure formed on the conductive substrate; a contact provided on the multilayered light emitting semiconductor epitaxial structure; a transparent layer provided on the multilayered light emitting semiconductor epitaxial structure; a wavelength converting layer provided on the transparent layer; and an optical layer provided on the wavelength converting layer. The invention also provides a method of manufacturing the white light emitting diode device.02-09-2012
20120032222LIGHT-EMITTING DEVICE AND METHOD FOR PRODUCING LIGHT EMITTING DEVICE - A method for producing a light-emitting device, includes: performing, on a first substrate made of III-V group compound semiconductor, crystal growth of a laminated body including an etching easy layer contiguous to the first substrate and a light-emitting layer made of nitride semiconductor; bonding a second substrate and the laminated body; and detaching the second substrate provided with the light-emitting layer from the first substrate by, one of removing the etching easy layer by using a solution etching method, and removing the first substrate and the etching easy layer by using mechanical polishing method.02-09-2012
20110031518LED DEVICE - A LED device includes a LED having a light-emitting surface and adapted for emitting light through the light-emitting surface, and a reflector formed of three or more than three reflecting layers having the peripheral surfaces thereof sloping at different angles and arranged in a stack on the light-emitting surface of the LED for letting the light emitted by the LED pass and/or reflecting and/or refracting the light to enhance luminous uniformity and luminous brightness and to avoid light concentration at the center or the formation of a corona.02-10-2011
20110031517METHOD FOR FABRICATING PIXEL STRUCTURE - A fabricating method for a pixel structure is provided. First, a substrate having an active device and a capacitor electrode line thereon is provided. Next, a passivation layer is formed on the substrate to cover the active device. After that, a light shielding layer is formed on the passivation layer to define a unit area. Next, an ink-jet printing is performed to form a color filter pattern within the unit area defined by the light shielding layer. After that, a portion of the color filter pattern is removed to form a first hole above active device. Next, the passivation layer exposed by the first hole is removed so as to form a contact hole exposing a portion of the active device. After that, a pixel electrode is formed on the color filter pattern to fill into the contact hole so as to electrically connect with active device.02-10-2011
20110031523WHITE LIGHT EMITTING DEVICE, BACKLIGHT, LIQUID CRYSTAL DISPLAY DEVICE, AND ILLUMINATING DEVICE - A white light emitting device includes a blue light emitting diode chip that emits blue light in a specific wavelength band, a first resin layer that seals the blue light emitting diode chip and includes a cured product of silicone resin, and a second resin layer that covers the first resin layer and includes phosphor powder, which absorbs the blue light and emits light in a specific wavelength band, and a cured product of transparent resin. The phosphor powder has a composition represented by the following Formula (1):02-10-2011
20110031521COMPOSITE PHOSPHOR POWDER, LIGHT EMITTING DEVICE USING THE SAME AND METHOD FOR MANUFACTURING COMPOSITE PHOSHPOR POWDER - The invention provides a high quality composite phosphor powder which ensures diversity in emission spectrum, color reproduction index, color temperature and color, a light emitting device using the same and a method for manufacturing the composite phosphor powder. The composite phosphor powder comprises composite particles. Each of the composite particles includes at least two types of phosphor particles and a light transmitting binder. The phosphor particles have different emission spectrums. In addition, the light transmitting binder is formed between the phosphor particles and binds them together.02-10-2011
20110031519SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light emitting device includes a light emitting portion, and an electrode formed on the light emitting portion. The electrode includes: a light reflecting layer configured to reflect light emitted from the light emitting portion and including a first metal; a first seed layer formed directly on the light reflecting layer and including a second metal; a second seed layer coating at least side surfaces of the light reflecting layer and the first seed layer, the second seed layer including a third metal; and a plating layer coating at least top and side surfaces of the second seed layer, the plating layer including a fourth metal.02-10-2011
20110031522NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride-based semiconductor light-emitting device 02-10-2011
20100155754Group III Nitride Semiconductor Light Emitting Device and Method for Producing the Same - The present invention provides a group III nitride semiconductor light emitting device and a method for producing the same. The group III nitride semiconductor light emitting device comprises (a1), (b1) and (c1) in this order: (a1) an N electrode, (b1) a semiconductor multi-layer film, (c1) a transparent electric conductive oxide P electrode, wherein the semiconductor multi-layer film comprises an N-type semiconductor layer, light emitting layer, P-type semiconductor layer and high concentration N-type semiconductor layer having an n-type impurity concentration of 5×1006-24-2010
20110049553LIGHT EMITTING DEVICE PACKAGE - A light emitting device package is provided. The light emitting device package includes a substrate including a first cavity having a first depth and a lateral surface inclined with respect to a bottom surface and a second cavity having a second depth recessed from the bottom surface of the first cavity and a lateral surface perpendicular to the bottom surface of the first cavity, a first electrode layer and a second electrode layer on the substrate, and a light emitting diode within the second cavity, the light emitting diode being electrically connected to the first and second electrode layers.03-03-2011
20110114983PHOTOELECTRIC DEVICE HAVING GROUP III NITRIDE SEMICONDUCTOR - A photoelectric device having Group III nitride semiconductor includes a conductive layer, a metallic mirror layer located on the conductive layer, and a Group III nitride semiconductor layer located on the metallic mirror layer. The Group III nitride semiconductor layer defines a number of microstructures thereon. Each microstructure includes at least one angled face, and the angled face of each microstructure is a crystal face of the Group III nitride semiconductor layer.05-19-2011
20110114980SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light-emitting device capable of improving current distribution, and a method for manufacturing the same is disclosed, wherein the semiconductor light-emitting device comprises a substrate; an N-type nitride semiconductor layer on the substrate; an active layer on the N-type nitride semiconductor layer; a P-type nitride semiconductor layer on the active layer; a groove in the P-type nitride semiconductor layer to form a predetermined pattern in the P-type nitride semiconductor layer; a light guide of transparent non-conductive material in the groove; and a transparent electrode layer on the P-type nitride semiconductor layer with the light guide.05-19-2011
20110114978SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor light-emitting device includes: a first semiconductor layer having a first major surface, a second major surface which is an opposite side from the first major surface, and a side surface; a second semiconductor layer provided on the second major surface of the first semiconductor layer and including a light-emitting layer; electrodes provided on the second major surface of the first semiconductor layer and on a surface of the second semiconductor layer on an opposite side from the first semiconductor layer; an insulating layer having a first surface formed on the second major surface side of the first semiconductor layer and a second surface which is an opposite side from the first surface; an external terminal which is a conductor provided on the second surface side of the insulating layer; and a phosphor layer provided on the first major surface of the first semiconductor layer and on a portion of the first surface of the insulating layer, the portion being adjacent to the side surface of the first semiconductor layer.05-19-2011
20110114984SUPPORTING SUBSTRATE FOR MANUFACTURING VERTICALLY-STRUCTURED SEMICONDUCTOR LIGHT-EMITTING DEVICE AND SEMICONDUCTOR LIGHT-EMITTING DEVICE USING THE SUPPORTING SUBSTRATE - The present invention is related to a supporting substrate for manufacturing vertically-structured semiconductor light emitting device and a vertically-structured semiconductor light emitting device using the same, which minimize damage and breaking of a multi-layered light-emitting structure thin film separated from a sapphire substrate during the manufacturing process, thereby improving the whole performance of the semiconductor light emitting device.05-19-2011
20130153944SEMICONDUCTOR PACKAGE STRUCTURE - A semiconductor package structure includes an insulating substrate, a patterned conductive layer, a light emitting diode (LED) chip and a conductive connection part. The insulating substrate has an upper surface divided into an element configuration region and an element bonding region. The patterned conductive layer includes plural circuits located in the element configuration region and at least one bonding pad located in the element bonding region. The LED chip is flip chip bonded on the patterned conductive layer and electrically connected to the circuits. The conductive connection part has a first end point electrically connected to the bonding pad and a second end point electrically connected to an external circuit. The bonding pad and a corner of the LED chip are disposed correspondingly. A horizontal distance between an apex of the corner and the first end point of the conductive connection part is greater than or equal to 30 micrometers.06-20-2013
20130153946LIGHT-EMITTING ELEMENT MOUNTING PACKAGE, LIGHT-EMITTING ELEMENT PACKAGE, AND METHOD OF MANUFACTURING THESE - A light-emitting element mounting package includes a light-emitting element mounting portion that includes a plurality of wiring portions arranged interposing a predetermined gap between the wiring portions facing each other, and an insulating layer on which the light-emitting element mounting portion is mounted, wherein an upper surface of the light-emitting element mounting portion is exposed on the insulating layer, wherein cutout portions are formed on lower sides of side edges of the wiring portions and contact the insulating layer.06-20-2013
20130153947LIGHT-EMITTING DEVICE - A light-emitting device, a method of fabricating the light-emitting device, a light-emitting device package and a lighting system are provided. The light-emitting device may include a substrate 06-20-2013
20110114979LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM - Disclosed are a light emitting device package and a lighting system. The light emitting device package includes a body including a cavity and formed in a transmittive material; a plurality of lead electrodes in the cavity; an isolation member disposed between the lead electrodes; a light emitting device electrically connected to the lead electrodes in the cavity; and a molding member on the light emitting device.05-19-2011
20110114985Green Emitting Phosphor - A green emitting phosphor is provided, allowing the internal quantum efficiency to be increased.05-19-2011
20110114981LIGHT EMITTING DISPLAY APPARATUS - In a light emitting display apparatus, excellent color reproducibility and high luminance for an emission color having a low color purity and low emission efficiency are realized. An electroluminescent layer whose color purity and emission efficiency are to be improved is stacked as a first layer on a substrate, and is interposed between a reflective electrode layer and a semi-reflective electrode, and then light extracted from the electroluminescent layer is intensified by interference between a reflective surface in the reflective electrode layer and a reflective surface in the semi-reflective electrode.05-19-2011
20110114982PHOSPHOR COATING METHOD FOR FABRICATING LIGHT EMITTING SEMICONDUCTOR DEVICE AND APPLICATIONS THEREOF - A phosphor coating method for fabricating a light-emitting semiconductor is provided. The phosphor coating method comprises the steps as follows: First a light emitting semiconductor wafer having a plurality of die units formed thereon is provided, and a photoresist is then formed on the light emitting semiconductor wafer to cover the die units. A pattern process is conducted to form a plurality of openings associated with the die units, whereby each die can be exposed via one of the openings. Subsequently, a compound mixed with phosphor is filled into the openings.05-19-2011
20100148201LED PACKAGE - There is provided an LED package including: a body unit; an LED chip mounted onto the body unit; lead frames mounted onto the body unit and electrically connected to the LED chip; and a reflection unit having a cavity to receive the LED chip therein and reflecting light emitted from the LED chip to the outside. Here, the reflection unit has a curved cross-section.06-17-2010
20110079809OPTICAL MODULE INSTALLING OPTICAL DEVICE WITH IDENTIFYING MARK VISUALLY INSPECTED AFTER ASSEMBLY THEREOF - An optical module is described, where the optical module installs an optical device whose identification mark is able to be distinguished even after the optical device is installed in the optical module. The identifying mark of the optical device is formed in a position able to be inspected from the direction of the normal line of the light-emitting facet of the optical device. Accordingly, the identifying mark becomes able to be identified through the lens after the optical device is installed in the package of the optical module.04-07-2011
20110079801OPTOELECTRONIC DEVICES WITH LAMINATE LEADLESS CARRIER PACKAGING IN SIDE-LOOKER OR TOP-LOOKER DEVICE ORIENTATION - A laminate leadless carrier package comprising an optoelectronic chip, a substrate supporting the chip, the substrate comprising a plurality of conductive and dielectric layers; a wire bond coupled to the optoelectronic chip and a wire bond pad positioned on the top surface of the substrate; an encapsulation covering the optoelectronic chip, the wire bond, and at least a portion of the top surface of the substrate, wherein the encapsulation is a molding compound; and wherein the package is arranged to be mounted as a side-looker. A process for manufacturing laminate leadless carrier packages, comprising preparing a substrate; applying epoxy adhesive to a die attach pad; mounting an optoelectronic chip on the die attach pad; wire-bonding the optoelectronic chip; molding a molding compound to form an encapsulation covering the optoelectronic chip, a wire bond, and the top surface of the substrate; and dicing the substrate into individual packages.04-07-2011
20110079811SEMICONDUCTOR CHIP ASSEMBLY WITH BUMP/BASE HEAT SPREADER AND DUAL-ANGLE CAVITY IN BUMP - A semiconductor chip assembly includes a semiconductor device, a heat spreader, a conductive trace and an adhesive. The heat spreader includes a bump that includes first, second and third bent corners that shape a cavity. The conductive trace includes a pad and a terminal. The semiconductor device is located within the cavity, is electrically connected to the conductive trace and is thermally connected to the bump. The bump extends into an opening in the adhesive and provides a recessed die paddle and a reflector for the semiconductor device. The conductive trace provides signal routing between the pad and the terminal.04-07-2011
20110084300LIGHT EMITTING DIODE DEVICE, LIGHT EMITTING APPARATUS AND METHOD OF MANUFACTURING LIGHT EMITTING DIODE DEVICE - Provided is a light emitting diode device. The light emitting diode device includes a light emitting diode chip having a first surface on which first and second electrodes are disposed, and a second surface opposing the first surface, a wavelength conversion portion including fluorescent substances and covering the first surface and side surfaces of the light emitting diode chip, wherein the side surfaces denote surfaces placed between the first and second surfaces, and first and second electricity connection portions each including a plating layer, respectively connected to the first and second electrodes, and exposed to the outside of the wavelength conversion portion. Accordingly, the light emitting diode device, capable of enhancing luminous efficiency and realizing uniform product characteristics in terms of the emission of white light, is provided. Further, a process for easily and efficiently manufacturing the above light emitting diode device is provided.04-14-2011
20110084297MOLDED RESIN PRODUCT, SEMICONDUCTOR LIGHT-EMITTING SOURCE, LIGHTING DEVICE, AND METHOD FOR MANUFACTURING MOLDED RESIN PRODUCT - A molded resin product or the like that is provided with a phosphor layer made of gel-like or rubber-like resin that can maintain its shape for a long period and that can be implemented easily. The molded resin product (phosphor layer 04-14-2011
20100140651DIFFRACTION GRATING LIGHT-EMITTING DIODE - The present invention provides a diffraction grating light-emitting diode in which the external quantum efficiency is improved by appropriately setting the period of holes when the holes are two-dimensionally periodically formed. A light-emitting diode is configured by laminating, on a sapphire substrate, an n-type GaN layer, an InGaN/GaN active layer, a p-type GaN layer, and a transparent electrode layer. Further, a large number of holes are two-dimensionally periodically formed in the transparent electrode layer, the p-type GaN layer, the InGaN/GaN active layer, and the n-type GaN layer so as to extend in a direction substantially perpendicular to these layers. Assuming that the non-radiative recombination rate is v06-10-2010
20110210364SILICONE COATED LIGHT-EMITTING DIODE - A silicone protective coating for an electronic light source and a method for applying the coating over an exposed or outer surface of the electronic light source assembled as part of or mounted to a circuit board or other substrate.09-01-2011
20090032832LIGHT EMITTING DIODE STRUCTURE - A light emitting diode structure has a silicon substrate, a conductive layer, and a light emitting diode. The top surface of the silicon substrate has a cup-structure like paraboloid, and the bottom of the cup-structure has a plurality of through-holes penetrating the silicon substrate. The conductive layer fills up the through-holes and protrudes out from the through-holes. The light emitting diode is disposed on the top of the conductive layer protruding out from the through-holes and is located at the focus of the cup-structure.02-05-2009
20110127551Method for enhancing electrical injection efficiency and light extraction efficiency of light-emitting devices - A method for enhancing electrical injection efficiency and light extraction efficiency of a light-emitting device is disclosed. The method includes the steps of: providing a site layer on the light-emitting device; placing a protection layer on the site layer; forming a cavity through the protection layer and the site layer; and growing a window layer in the cavity. The shape of the window layer can be well controlled by adjusting reactive temperature, reactive time, and N06-02-2011
20100163905LIGHT EMITTING DEVICE PACKAGE - A light emitting device package and a method for manufacturing the same are provided. The light emitting device package comprises a package body including a cavity disposed at an upper portion. The light emitting device package includes an insulating layer disposed on a surface of the package body. The light emitting device package includes a plurality of metal layers disposed on the insulating layer. The light emitting device package includes a light emitting device disposed in the cavity. The light emitting device package includes a first metal plate disposed at a rear surface of the package body at a location corresponding to the light emitting device.07-01-2010
20100163909MANUFACTURING METHOD AND STRUCTURE OF LIGHT-EMITTING DIODE WITH MULTILAYERED OPTICAL LENS - A manufacturing method and a structure of a light-emitting diode (LED) with a multilayered optical lens are provided. The manufacturing method includes the steps of: providing an LED chip; forming at least one inner protective layer covering the LED chip and its wire connecting points; and forming an outer protective layer covering the inner protective layer. Both the inner and outer protective layers are optical resin layers while the inner protective layer is harder than the outer protective layer. The structure of the LED includes: an LED chip; at least one inner protective layer covering the LED chip and its wire connecting points; and an outer protective layer covering the said inner protective layer. The relatively hard said inner protective layer can resist external force transmitted by the outer protective layer and protect the LED chip and its wire connecting points from damage by the external force.07-01-2010
20100163904SEMICONDUCTOR LIGHT-EMITTING DEVICE AND LIGHT-EMITTING DEVICE PACKAGE HAVING THE SAME - Provided are a semiconductor light-emitting device and a light-emitting device package having the same. The semiconductor light-emitting device comprises a light-emitting structure, a first electrode unit, and a second electrode layer. The light-emitting structure comprises a plurality of compound semiconductor layers having a rounded side surface at an outer edge. The first electrode unit is disposed on the light-emitting structure. The second electrode layer is disposed under the light-emitting structure.07-01-2010
20100163900LIGHT EMITTING DEVICE HAVING PLURALITY OF NON-POLAR LIGHT EMITTING CELLS AND METHOD OF FABRICATING THE SAME - Disclosed are a light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same. This method comprises preparing a first substrate of sapphire or silicon carbide having an upper surface with an r-plane, an a-plane or an m-plane. The first substrate has stripe-shaped anti-growth patterns on the upper surface thereof, and recess regions having sidewalls of a c-plane between the anti-growth patterns. Nitride semiconductor layers are grown on the substrate having the recess regions, and the nitride semiconductor layers are patterned to form the light emitting cells separated from one another. Accordingly, there is provided a light emitting device having non-polar light emitting cells with excellent crystal quality.07-01-2010
20100163896Nitride Red Phosphors and White Light Emitting Diode Using Rare-Earth-Co-Doped Nitride Red Phosphors - Disclosed are nitride red phosphors and white light emitting diodes using the same. More particularly, the present invention provides a nitride red phosphor with easily controlled composition of phosphor fraction and improved uniformity and color gamut thereof, a method for preparation thereof, a white light emitting diode with excellent color rendition and high light emitting efficiency, and a white light emitting diode package using the same.07-01-2010
20100163901NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT - In a nitride semiconductor light emitting element, a light transmitting substrate has an upper surface on which a nitride semiconductor layer including at least a light emitting layer is formed. On the upper surface of the light transmitting substrate, recess regions and rise regions are formed. One of each of the recess regions and each of the rise regions is formed by a polygon having at least one apex having an interior angle of 180° or greater when viewed in a planar view. The other of each of the recess regions and each of the rise regions is formed not to be connected to one another in a straight line when viewed in a planar view. A nitride semiconductor light emitting element having such a configuration has excellent light extraction efficiency and can be manufactured at a moderate cost.07-01-2010
20100163899WHITE LIGHT EMITTING DEVICE - A white light emitting device is disclosed. The white light emitting device includes a blue light emitting diode (LED) including a plurality of active layers generating different peak wavelengths, and phosphors emitting yellow light when excited by light emitted from the blue LED. The white light emitting device ensures enhanced excitation efficiency of the phosphors, and high luminance.07-01-2010
20100163897FLEXIBLE LIGHT SOURCE DEVICE AND FABRICATION METHOD THEREOF - A flexible light source device including a substrate, a light emitting device, a molding compound, a dielectric layer, and a metal line is provided. The substrate has a first surface, a second surface opposite to the first surface, and a first opening. The light emitting device is disposed on the first surface of the substrate and covers the first opening. The molding compound is located above the first surface and covers the light emitting device. The dielectric layer is disposed on the second surface and covers a sidewall of the first opening. The dielectric layer has a second opening which exposes part of the light emitting device. The metal line is disposed on the dielectric layer, wherein the metal line is electrically connected to the light emitting device via the second opening in the dielectric layer. Additionally, a fabrication method of the flexible light source device is also provided.07-01-2010
20100163898LIGHT EMITTING DIODE APPARATUS - A light emitting diode apparatus comprises a substrate having a circuit pattern, a reflection layer disposed on the substrate, at least one light emitting element disposed on the reflection layer, a reflector disposed around the at least one light emitting element, a sealing material formed over the at least one light emitting element and a phosphor layer disposed over the sealing material. The light emitting element comprises a conductive portion electrically coupled to the circuit pattern. In one embodiment, a plurality of light emitting elements are linearly arrayed, and a spacer is disposed between every two adjacent light emitting elements.07-01-2010
20100163895LIGHT EMITTING DEVICE - Provided is a compound light emitting device which facilitates easy connection of power supply lines, and has a high emission intensity in-plane uniformity. The light emitting device includes a first-conduction-type cladding layer, active layer structure, and second-conduction-type cladding layer each containing a III-V compound semiconductor. The first-conduction-type cladding layer and second-conduction-type cladding layer sandwich the active layer structure. The light emitting device includes a first-conduction-type-side electrode (07-01-2010
20110121332III-V LIGHT EMITTING DEVICE WITH THIN N-TYPE REGION - A device includes a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region. A transparent, conductive non-III-nitride material is disposed in direct contact with the n-type region. A total thickness of semiconductor material between the light emitting layer and the transparent, conductive non-III-nitride material is less than one micron.05-26-2011
20100032701Nitride semiconductor light emitting device and method of manufacturing the same - A nitride semiconductor light-emitting device including a reflecting layer made of a dielectric material, a transparent conductive layer, a p-type nitride semiconductor layer, a light emitting layer and an n-type nitride semiconductor layer in this order and a method of manufacturing the same are provided. The transparent conductive layer is preferably made of a conductive metal oxide or an n-type nitride semiconductor, and the reflecting layer made of a dielectric material preferably has a multilayer structure obtained by alternately stacking a layer made of a dielectric material having a high refractive index and a layer made of a dielectric material having a low refractive index.02-11-2010
20110079803Carrying Structure of Semiconductor - A carrying structure of semiconductor includes a carrier made of a plastic material with a heat conduction region, each surface of the carrier has an interface layer formed on, and an electrically insulation circuit and a metal layer are defined on the interface layer. The insulation circuit is located on the surface of the heat conduction region and on an encircling annular region extended from two surfaces of the heat conduction region, and at the same time exposing parts of the carrier surface thereby splitting the metal layer on the interface layer into at least two electrodes. A thermal conductor formed in the heat conduction region has a LED chip adhered on it which has at least a contact point connected with the corresponding metal layer with a metal wiring so as to dissipate the heat generated by the chip rapidly with the thermal conductor.04-07-2011
20110079806LIGHT-EMITTING DIODE STRUCTURE - A light-emitting diode structure is provided. The light-emitting diode structure includes a light-emitting diode chip, a lead frame for electrically connecting and supporting the light-emitting diode chip, and a lens covering the light-emitting diode chip and to partially cover the lead frame. A recess disposed on the upper portion of the lens has a ladder-like inner wall formed of an upper inclined wall portion, a lower inclined wall portion, and a connecting wall portion connected to the upper and lower inclined wall portions. The slope of the upper inclined wall portion is greater than that of the lower inclined wall portion, and the slope of the connecting wall portion is greater than the upper and lower inclined wall portions.04-07-2011
20110079808LIGHT EMITTING DIODE - A light emitting diode is provided, including an LED chip, a reflector, a lens, a circuit plate, a circuit substrate and an electrical conductivity device. The LED chip is disposed in the reflector and the lens is disposed on the reflector, covering the reflector and the LED chip. The LED chip is electrically connected to the circuit plate. The circuit plate further includes a first through hole therein and the circuit substrate further includes a second through hole therein. The electrical conductivity device passes through the first through hole and the second through hole so that the circuit plate is electrically connect to the circuit substrate. The reflector is installed between the circuit plate and the circuit substrate. The first through hole and the second through hole are not connected to the reflector.04-07-2011
20110079807LIGHT-EMITTING DIODE STRUCTURE - A light-emitting diode structure includes a base with a recessed portion, a light-emitting chip and a light-transmissive block. The light-emitting chip disposed in the recessed portion of the base and emits a light beam. The light-transmissive block disposed on the base covers the recessed portion and the light-emitting chip, so that the light beam emitted from the light-emitting chip is radiated outwardly via the light-transmissive block. The light-transmissive block is a flat-top multilateral cone including a bottom surface, a top surface, and several side surfaces connected to and located between the bottom surface and the top surface. A slot with a bottom portion is formed on the top surface of the light-transmissive block.04-07-2011
20110079802LIGHT EMITTER - Embodiments of light sources are disclosed herein. An embodiment of the light source comprises a lead frame having a first side and a second side. A hole extends through the lead frame between the first side and the second side. An adhesive is located in the hole and extends beyond the hole, wherein the adhesive extends beyond the diameter of the hole on the first side and the second side of the first lead frame. A light emitter adhered to the adhesive proximate the first side of the first lead frame.04-07-2011
20110121331WAVELENGTH CONVERTED SEMICONDUCTOR LIGHT EMITTING DEVICE - A device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region. A luminescent material is positioned in a path of light emitted by the light emitting layer. A thermal coupling material is disposed in a transparent material. The thermal coupling material has a thermal conductivity greater than a thermal conductivity of the transparent material. The thermal coupling material is positioned to dissipate heat from the luminescent material.05-26-2011
20100219439SEMICONDUCTOR LIGHT EMITTING DEVICE - Provided is a semiconductor light emitting device. The semiconductor light emitting device comprises a substrate, a first semiconductor layer on substrate, an air-gap part disposed in at least portion between the substrate and the first semiconductor layer, and a plurality of compound semiconductor layers comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer on the first semiconductor layer.09-02-2010
20100219433LIGHT EMITTING DEVICES - Light emitting devices conformally covered by a luminescent material layer are presented. A light emitting device includes a semiconductor light emitting die attached to a substrate. At least one bond pad is disposed on the semiconductor light emitting die. A luminescent material layer conformally covers the semiconductor light emitting die, wherein the luminescent material layer has at least one opening corresponding to and exposing the at least one bond pad. At least one wirebond is electrically connected to the at least one bond pad and a contact pad on the substrate.09-02-2010
20110241057HIGH-EFFICIENCY LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A light-emitting device includes a substrate; a first semiconductor layer formed on the substrate; an active layer formed on the first semiconductor layer; a second semiconductor layer formed on the active layer; and a first pad formed on the second semiconductor layer, wherein the second semiconductor layer includes a plurality of voids between the active layer and the first pad.10-06-2011
20110241056SEMICONDUCTOR LIGHT EMITTING DEVICE WITH LIGHT EXTRACTION STRUCTURES - Structures are incorporated into a semiconductor light emitting device which may increase the extraction of light emitted at glancing incidence angles. In some embodiments, the device includes a low index material that directs light away from the metal contacts by total internal reflection. In some embodiments, the device includes extraction features such as cavities in the semiconductor structure which may extract glancing angle light directly, or direct the glancing angle light into smaller incidence angles which are more easily extracted from the device.10-06-2011
20110241054LED PACKAGE HAVING AN ARRAY OF LIGHT EMITTING CELLS COUPLED IN SERIES - Disclosed is a light emitting diode (LED) package having an array of light emitting cells coupled in series. The LED package comprises a package body and an LED chip mounted on the package body. The LED chip has an array of light emitting cells coupled in series. Since the LED chip having the array of light emitting cells coupled in series is mounted on the LED package, it can be driven directly using an AC power source.10-06-2011
20110241050HIGH EFFICIENCY LIGHT EMITTING DIODE AND METHOD FOR FABRICATING THE SAME - A high-efficiency light emitting diode including: a semiconductor stack positioned on a support substrate, including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; an insulating layer disposed in an opening that divides the p-type compound semiconductor layer and active layer; a transparent electrode layer disposed on the insulating layer and the p-type compound semiconductor layer; a reflective insulating layer covering the transparent electrode layer, to reflect light from the active layer away from the support substrate; a p-electrode covering the reflective insulating layer; and an n-electrode is formed on top of the n-type compound semiconductor layer. The p-electrode is electrically connected to the transparent electrode layer through the insulating layer.10-06-2011
20110241044LIQUID CRYSTAL DISPLAY DEVICE INCLUDING WHITE LIGHT EMITTING DIODE - A white light emitting diode and a liquid crystal display device that realizes images using the white light are provided. The white light emitting diode includes a blue light emitting diode (“LED”) light source, and a light conversion layer which converts incident light from the LED light source into white light. The light conversion layer includes green light emitting semiconductor nanocrystal and red light emitting semiconductor nanocrystal. A light emitting peak wavelength of the green light emitting semiconductor nanocrystal is about 520 nanometer (nm) or more, a light emitting peak wavelength of the red semiconductor nanocrystal is about 610 nanometer (nm) or more, and full width at half maximums (FWHMs) of light emitting peaks of the green and red light emitting semiconductor nanocrystals are about 45 nanometer (nm) or less.10-06-2011
20110079805LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - A light-emitting diode and a method for manufacturing the same are described. The light-emitting diode includes a bonding substrate, a first conductivity type electrode, a bonding layer, an epitaxial structure, a second conductivity type electrode, a growth substrate and an encapsulant layer. The first conductivity type electrode and the bonding layer are respectively disposed on two surfaces of the bonding substrate. The epitaxial structure includes a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer. A trench is set around the epitaxial structure and extends from the second conductivity type semiconductor layer to the first conductivity type semiconductor layer. The second conductivity type electrode is electrically connected to the second conductivity type semiconductor layer. The growth substrate is disposed on the epitaxial structure and includes a cavity exposing the epitaxial structure and the trench. The encapsulant layer is filled in the cavity.04-07-2011
20110241046Light Emitting Device Having Peripheral Emissive Region - Light emitting devices are provided that include one or more OLEDs disposed only on a peripheral region of the substrate. An OLED may be disposed only on a peripheral region of a substantially transparent substrate and configured to emit light into the substrate. Another surface of the substrate may be roughened or include other features to outcouple light from the substrate. The edges of the substrate may be beveled and/or reflective. The area of the OLED(s) may be relatively small compared to the substrate surface area through which light is emitted from the device. One or more OLEDs also or alternatively may be disposed on an edge of the substrate about perpendicular to the surface of the substrate through which light is emitted, such that they emit light into the substrate. A mode expanding region may be included between each such OLED and the substrate.10-06-2011
20110241045HIGH EFFICIENCY LIGHT EMITTING DIODE AND METHOD FOR FABRICATING THE SAME - A high-efficiency light emitting diode including: a semiconductor stack positioned on a support substrate, including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; an insulating layer disposed in an opening that divides the p-type compound semiconductor layer and active layer; a transparent electrode layer disposed on the insulating layer and the p-type compound semiconductor layer; a reflective insulating layer covering the transparent electrode layer, to reflect light from the active layer away from the support substrate; a p-electrode covering the reflective insulating layer; and an n-electrode is formed on top of the n-type compound semiconductor layer. The p-electrode is electrically connected to the transparent electrode layer through the insulating layer.10-06-2011
20110133232Lead frame, its manufacturing method, and semiconductor light emitting device using the same - A lead frame comprises on a same plane, a pad part including an LED chip mounting upper surface A on which at least an LED chip is to be mounted, and a lead part including an electric connection area C in which an electric connection with the LED chip is made. A relationship between an area S06-09-2011
20090321769METHOD FOR COATING SEMICONDUCTOR DEVICE USING DROPLET DEPOSITION - Methods and systems for coating of semiconductor devices using droplets of wavelength conversion or phosphor particles in a liquid medium. A plurality of nozzles delivers a controlled amount of the matrix material to the surface of the semiconductor device, with each of said nozzles having an opening for the matrix material to pass. The opening has a diameter wherein the diameter of the phosphor particles is less than or approximately equal to one half the diameter of the opening. The phosphor particles are also substantially spherical or rounded. The nozzles are typically arranged on a print head that utilizes jet printing techniques to cover the semiconductor device with a layer of the matrix material. The methods and systems are particularly applicable to covering LEDs with a layer of phosphor materials.12-31-2009
20110084299LED LIGHT SOURCE AND MANUFACTURING METHOD FOR THE SAME - An LED light source can include protection members to protect bonding wires. The LED can include a substrate including electrode patterns, a sub mount substrate located on the substrate, at least one flip LED chip mounted on the sub mount substrate and a phosphor rein covering the LED chip. The bonding wires can connect each of the electrode patterns to conductor patterns connecting to electrodes of the LED chip. The protection members can be located so as to surround both sides of the bonding wires. In addition, because each height of the protection members is higher than each maximum height of the bonding wires and is lower than a height of the phosphor resin, the protection members can protect the bonding wires from external pressure while the light flux is not reduced. Thus, the disclosed subject matter can provide a reliable LED light source having a favorable light distribution.04-14-2011
20110084298LIGHT EMITTING DIODE AND METHOD FOR MAKING SAME - A light emitting diode comprises a heat conductive layer, a semiconductor layer disposed above the heat conductive substrate and consisting of a p-type semiconductor layer, an active layer and an n-type semiconductor layer, a transparent electrode layer, a current blocking layer and an electrode contact pad. The p-type semiconductor layer has first concaves located on its surface distant from the active layer. The n-type semiconductor layer has second concaves located on its surface distant from the active layer. The transparent electrode layer is located on the surface of the n-type semiconductor layer except the second concaves. The current blocking layer is located in the first concaves of the p-type semiconductor layer. The electrode contact pad is located on the surface of the transparent electrode layer. The density of the second concaves decrease with distance from the electrode contact pad.04-14-2011
20110084296Light Emitting Diode and Manufacturing Method Thereof - A light emitting diode manufacturing method introduces a transparent enclosure to improve the uniformity of coating phosphor, so as to achieve the purposes of enhancing the uniform color temperature and the light emitting efficiency. The manufacturing method is used extensively for packaging various types of light emitting diode chips and mass production.04-14-2011
20110210367LIGHT EMITTING DIODE PACKAGES, LIGHT EMITTING DIODE SYSTEMS AND METHODS OF MANUFACTURING THE SAME - In a method of forming an LED semiconductor device, and in an LED semiconductor device, an LED is provided on a substrate. A first encapsulant material layer is provided on the LED, and the first encapsulant material layer is firstly annealed. A luminescence conversion material layer is provided on the firstly annealed first encapsulant material layer, and the first encapsulant material layer and the luminescence conversion material layer and secondly annealed.09-01-2011
20110210369LIGHT-EMITTING MODULE, MANUFACTURING METHOD FOR LIGHT-EMITTING MODULE, AND LIGHT FIXTURE UNIT - In a light emitting module 09-01-2011
20110210365METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes steps of forming a semiconductor device layer on an upper surface of a substrate including the upper surface, a lower surface and a dislocation concentrated region arranged so as to part a first side closer to the upper surface and a second side closer to the lower surface, exposing a portion where the dislocation concentrated region does not exist above on the lower surface by removing the substrate on the second side along with at least a part of the dislocation concentrated region, and forming an electrode on the portion.09-01-2011
20110210362LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE THEREOF - A light emitting device includes a light emitting structure including a second conduction type semiconductor layer, an active layer, and a first conduction type semiconductor layer, a second electrode layer arranged under the light emitting structure, a first electrode layer having at least portion extending to contact the first conduction type semiconductor layer passing the second conduction type semiconductor layer and the active layer, and an insulating layer arranged between the second electrode layer and the first electrode layer, between the second conduction type semiconductor layer and the first electrode layer, and between the active layer and the first electrode layer, wherein said at least one portion of the first electrode layer contacting the first conduction type semiconductor layer has a roughness.09-01-2011
20110210361HIGH EFFICIENT PHOSPHOR-CONVERTED LIGHT EMITTING DIODE - A light-emitting device and manufacturing method thereof are disclosed. The light-emitting device includes a substrate, a semiconductor light-emitting structure, a filter layer, and a fluorescent conversion layer. The method comprises forming a semiconductor light-emitting structure over a substrate, forming a filter layer over the semiconductor light-emitting structure, and forming a fluorescent conversion layer over the filter layer.09-01-2011
20110210358WAVELENGTH-CONVERTING LIGHT EMITTING DIODE (LED) CHIP AND LED DEVICE EQUIPPED WITH CHIP - A wavelength-converted light emitting diode (LED) chip is provided. The wavelength-converted LED chip includes an LED chip and a wavelength-converted layer. The LED chip emits light in a predetermined wavelength region. The wavelength-converted layer is formed of a resin containing phosphor bodies of at least one kind which convert a portion of the light emitted from the LED chip into light in a different wavelength region. The wavelength-converted layer is formed on an upper surface of the LED chip, and has a convex meniscus-shaped upper surface.09-01-2011
20110210357Optoelectronic Component and Method for the Production Thereof - A method of producing an optoelectronic component, comprising the method steps: A) providing a growth substrate (09-01-2011
20110210356SEMICONDUCTOR PACKAGE AND FABRICATION METHOD THEREOF - A light emitting element package includes a substrate, a reflection layer, at least one light emitting element, at least two conductive layers, a plurality of metal pins and an encapsulation layer. The reflection layer is formed on the substrate. The at least one light emitting element is mounted on the reflection layer on the substrate. The at least two conductive layers are electrically coupled to the at least one light emitting element. The metal pins electrically couple to the at least two conductive layers. The encapsulation layer is mounted on the substrate for encapsulating the at least one light emitting element.09-01-2011
20110210355LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is to improve reliability of a light-emitting device. A light-emitting device has a driver circuit portion including a transistor for a driver circuit and a pixel portion including a transistor for a pixel over one substrate. The transistor for the driver circuit and the transistor for the pixel are inverted staggered transistors each including an oxide semiconductor layer in contact with part of an oxide insulating layer. In the pixel portion, a color filter layer and a light-emitting element are provided over the oxide insulating layer. In the transistor for the driver circuit, a conductive layer overlapping with a gate electrode layer and the oxide semiconductor layer is provided over the oxide insulating layer. The gate electrode layer, a source electrode layer, and a drain electrode layer are formed using metal conductive films.09-01-2011
20110084295Light Emitting Device - A light emitting device includes a light emitting element, a base, and a transparent layer. The base has an upper side portion including a first portion and a second portion. The first portion includes a mounting region of the light emitting element, and has a first porosity. The second portion surrounds the first portion, includes a plurality of transparent particles, and has a second porosity larger than the first porosity. The light transmitting layer encapsulates the light emitting element, and is attached to the first portion in a state where the transparent layer is apart from the second portion.04-14-2011
20110084301PACKAGE-INTEGRATED THIN FILM LED - LED epitaxial layers (n-type, p-type, and active layers) are grown on a substrate. For each die, the n and p layers are electrically bonded to a package substrate that extends beyond the boundaries of the LED die such that the LED layers are between the package substrate and the growth substrate. The package substrate provides electrical contacts and conductors leading to solderable package connections. The growth substrate is then removed. Because the delicate LED layers were bonded to the package substrate while attached to the growth substrate, no intermediate support substrate for the LED layers is needed. The relatively thick LED epitaxial layer that was adjacent the removed growth substrate is then thinned and its top surface processed to incorporate light extraction features. There is very little absorption of light by the thinned epitaxial layer, there is high thermal conductivity to the package because the LED layers are directly bonded to the package substrate without any support substrate therebetween, and there is little electrical resistance between the package and the LED layers so efficiency (light output vs. power input) is high. The light extraction features of the LED layer further improves efficiency.04-14-2011
20090212315SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light emitting device is provided so that an optical axis thereof is properly set parallel with the mounting board when the device is mounted on the mounting board. The semiconductor light emitting device can have a structure in that light can be incident on the light guide plate with high efficiency and uniform introduction into the light guide plate. A multi-piece substrate can include electrodes, a plurality of semiconductor light emitting elements, and a sealing resin for sealing them simultaneously. The thus obtained integrated substrate is cut into individual semiconductor light emitting device bodies. On one of the cut end faces, which serves as a surface to be mounted onto a mounting board, a light-shielding reflective film can be coated over an area from the edge of the light emission surface of the sealing resin to at least part of the substrate. On the other cut end face, the sealing resin can be covered with a light-shielding reflective film.08-27-2009
20090242920SIDE VIEW LED PACKAGE AND BACK LIGHT MODULE COMPRISING THE SAME - Disclosed is a side view LED package that can be more accurately mounted onto a surface of a substrate such as a printed circuit board without distortion includes a first portion of a body allowing light to be emitted in front thereof, the first portion having a horizontal plane formed on a top or bottom side thereof; and a second portion of the body positioned backward with respect to a back end boundary line of the first portion, the second portion being formed with an inclined plane that is adjacent to the horizontal plane and has height decreased from the back end boundary line, wherein the inclined plane is partially formed with an added thickness portion that is flush with the horizontal plane.10-01-2009
20100038667Optoelectronic Semiconductor Chip and Method for Manufacturing a Contact Structure for Such a Chip - An optoelectronic semiconductor chip with a semiconductor body having a semiconductor layer sequence with an active region suitable for generating radiation is specified, wherein the semiconductor chip comprises a radiation-transmissive and electrically conductive contact layer arranged on a semiconductor body and electrically connected to an active region. The contact layer adjoins a barrier layer of the semiconductor layer sequence and a contact layer is applied to the semiconductor body having a structure. An electrode is arranged on the semiconductor body on a side of the active region facing away from the barrier layer and having a contact area, wherein the contact layer adjoins the barrier layer with its entire surface in a region of the barrier layer that is covered by the contact area of the electrode.02-18-2010
20110241048RESIN COMPOSITION, REFLECTOR FOR LIGHT-EMITTING SEMICONDUCTOR DEVICE, AND LIGHT-EMITTING SEMICONDUCTOR UNIT - Disclosed herein is a resin composition including 100 parts by weight of an organic resin and 50 to 1,000 parts by weight of an inorganic filler, wherein 10 to 100% of the inorganic filler is composed of an oxide of a rare earth element.10-06-2011
20090321760FABRICATION OF COMPACT OPTO-ELECTRONIC COMPONENT PACKAGES - A wafer-level method of fabricating an opto-electronic component package, in which the opto-electronic component is mounted to a semiconductor wafer having first and second surfaces on opposite sides of the wafer. The method includes etching vias in the first surface of the semiconductor wafer. The first surface and surfaces in the vias are metallized, and the metal is structured to define a thermal pad and to define the anode and cathode contact pads. A carrier wafer is attached on the side of the semiconductor wafer having the first surface, and the semiconductor wafer is thinned from its second surface to expose the metallization in the vias. Metal is provided on the second surface, and the metal is structured to define a die attach pad and additional anode and cathode pads for the opto-electronic component. The opto-electronic component is mounted on the die attach pad and a protective cover is formed over the opto-electronic component.12-31-2009
20090218584Housing for an Optoelectronic Component, Optoelectronic Component, and Method for Producing a Housing for an Optoelectronic Component - A housing for an optoelectronic component is disclosed, having a plastic base body that has a front side with an assembly region for at least one radiation emitting or radiation detecting body, wherein the plastic base body is formed from at least one first plastic component and at least one second plastic component. The second plastic component is disposed on the front side of the plastic base body, and is formed from a material that differs from the first plastic component in at least one optical property, and forms an optically functional region of the plastic base body. Further, a method for producing a housing for an optoelectronic component and a light emitting diode component is disclosed.09-03-2009
20090218583LIGHT-EMITTING DEVICE, ELECTRONIC APPARATUS, AND LIGHT-EMITTING DEVICE MANUFACTURING METHOD - Disclosed is a light-emitting device. The light-emitting device includes an EL layer and a heat dissipation layer. The EL layer includes a first semiconductor layer, a second semiconductor layer, and an active layer, the first semiconductor layer having a first conductivity type that is one of n type and p type, the second semiconductor layer having a second conductivity type that is opposite to the first conductivity type, the active layer being provided between the first semiconductor layer and the second semiconductor layer. The heat dissipation layer has the first conductivity type and is bonded to a side of the EL layer closer to the second semiconductor layer than the first semiconductor layer.09-03-2009
20090218581ILLUMINATION SYSTEM COMPRISING A RADIATION SOURCE AND A LUMINESCENT MATERIAL - An illumination system, comprising a radiation source (09-03-2009
20090218585 ALUMINATE PHOSPHOR CONTAINING BIVALENCE METAL ELEMENTS, ITS PREPARATION AND THE LIGHT EMITTING DEVICES INCORPORATING THE SAME - A phosphor can be excited by UV, purple or blue light LED, its production and the light emitting devices. The general formula of the phosphor is Ln09-03-2009
20090039366Semiconductor light-emitting device with high heat-dissipation efficiency and method for fabricating the same - The invention discloses a semiconductor light-emitting device and a method of fabricating the same. The semiconductor light-emitting device according to the invention includes a substrate, a multi-layer structure, a first electrode structure, and a second electrode structure. The substrate has an upper surface and a lower surface. The substrate therein includes at least one formed-through hole which is filled with a thermally conductive material. The multi-layer structure is formed on the upper surface of the substrate and includes a light-emitting region. The first electrode structure is formed on the multi-layer structure, and the second electrode structure is formed on the lower surface of the substrate. In particular, the heat generated during the operation of the semiconductor light-emitting device is conducted to the thermally conductive material and then is dissipated therefrom.02-12-2009
20090321762LIGHT EMITTING DIODE12-31-2009
20120146071LIGHT EMITTING CHIP AND METHOD FOR MANUFACTURING THE SAME - A light emitting chip includes a substrate, a heat conducting layer formed on the substrate, a light emitting structure and a connecting layer connecting the heat conducting layer with the light emitting structure. The heat conducting layer includes a plurality of spaced catalyst areas on the substrate and a plurality of carbon nanotube islands vertically grown from the catalyst areas. The light emitting structure includes a first semiconductor layer, a light emitting layer and a second semiconductor layer. A first transparent conductive layer and a current conducting layer are sandwiched between the first semiconductor layer and the connecting layer. A second transparent conductive layer is formed on the second semiconductor layer.06-14-2012
20100012962LIGHT EMITTING DIODE AND FABRICATION THEREOF - A light emitting diode is disclosed, wherein the light emitting diode comprises a metal reflective layer for enhancing the light reflection efficiency inside the light emitting diode and reducing the resistance to avoid the power loss. In addition, the light emitting diode further comprises a buffer layer sandwiched between the metal reflective layer and a semiconductor layer, wherein the buffer layer is mixed with metal and non-metallic transparent material for reducing the stress between the semiconductor and the metal to decrease the possibility of the die cracking.01-21-2010
20100012963LIGHT EMITTING DIODE AND METHOD OF THE SAME - A light emitting diode and a method of the same are provided. The light emitting diode includes a substrate with a first region and a second region, a first semiconductor layer, a light-emitting layer, and a second semiconductor layer. The light emitting diode further includes a plurality of vias, a first metal layer, a second metal layer, and a patterned passivation layer interposed between the second semiconductor layer and the first metal layer. The plurality of vias are located in the first region and penetrate through the second semiconductor layer and the light-emitting layer to expose part of the first semiconductor layer. The first metal layer is located in the first region, and electrically contacted with the first semiconductor layer through the plurality of vias. The second metal layer is located in the second region, and electrically contacted with the second semiconductor layer and electrically insulated from the first metal layer. The patterned passivation layer is configured to electrically isolate the first metal layer from the second semiconductor layer and the light-emitting layer.01-21-2010
20100012961LIGHT EMITTING DEVICE AND METHOD FOR PRODUCING THE SAME - A light emitting device 01-21-2010
20100012960LIGHT EMITTING DIODE - An LED includes a substrate, an LED die, and a packaging layer. The substrate has conductive pins extending therethrough. The LED die is arranged on the substrate and electronically connected to the conductive pins of the substrate. The packaging layer couples to the substrate to encapsulate the LED die therein. The packaging layer includes a contacting surface attached to the substrate, an outer surface opposite to the contacting surface and facing an ambient air, and a lateral surface between the contacting surface and the outer surface. The lateral surface of the packaging layer converges from the contacting surface to the outer surface. A refractive index of the packaging layer decreases from the contacting surface to the outer surface.01-21-2010
20100012958LIGHT EMITTING DEVICE WITH TENSION RELAXATION - A light emitting device is provided, comprising a light emitting diode 01-21-2010
20100012957LIGHT-EMITTING DIODE DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device is disclosed. The semiconductor device comprises a light-emitting diode chip disposed in a cavity of a semiconductor substrate. At least two isolated outer wiring layers are disposed on the bottom surface of the semiconductor substrate and are electrically connected to the light-emitting diode chip, serving as input terminals. A lens module is adhered to the top surface of the semiconductor substrate to cap the cavity, in which the lens module comprises a molded lens and a molded fluorescent layer thereunder and the molded fluorescent layer faces the light-emitting diode chip. A method for fabricating the semiconductor devices is also disclosed.01-21-2010
20100012964ILLUMINATION SYSTEM COMPRISING MONOLITHIC CERAMIC LUMINESCENCE CONVERTER - An illumination system comprising a radiation source and a composite monolithic ceramic luminescence converter comprising a composite luminescent material comprising at least one first phosphor and at least one second phosphor capable of absorbing a part of the light emitted by the radiation source and emitting light of a wavelength different from that of the absorbed light provides improved light mixing and chromaticity control of the emitted light mixture. The invention relates also to a composite monolithic ceramic luminescence converter and a method of manufacturing such composite monolithic ceramic luminescence converter.01-21-2010
20100032697LIGHT-EMITTING MODULE - A light-emitting module (02-11-2010
20100038670ILLUMINATION ASSEMBLY INCLUDING CHIP-SCALE PACKAGED LIGHT-EMITTING DEVICE - The embodiments described herein are drawn generally towards illumination assemblies including light emitting devices. In some embodiments, the illumination assemblies including chip-scale packaged light-emitting devices and optical elements.02-18-2010
20100038661Light-Emitting Diode With Non-Metallic Reflector - A light-emitting diode (LED) device is provided. The LED device has a substrate, a reflective structure over the substrate, and an LED structure over the reflective structure. The reflective structure is formed of non-metallic materials. In one embodiment, the reflective structure is formed of alternating layers of different non-metallic materials having different refractive indices. In another embodiment, the reflective structure is formed of alternating layers of high-porosity silicon and low-porosity silicon. In yet another embodiment, the reflective structure is formed of silicon dioxide, which may allow the use of fewer layers. The reflective structure may be formed directly on the same substrate as the LED structure or formed on a separate substrate and then bonded to the LED structure.02-18-2010
20100038659Omnidirectional Reflector - A system and method for manufacturing an LED is provided. A preferred embodiment includes a substrate with a distributed Bragg reflector formed over the substrate. A photonic crystal layer is formed over the distributed Bragg reflector to collimate the light that impinges upon the distributed Bragg reflector, thereby increasing the efficiency of the distributed Bragg reflector. A first contact layer, an active layer, and a second contact layer are preferably either formed over the photonic crystal layer or alternatively attached to the photonic crystal layer.02-18-2010
20100038665LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A light-emitting device (02-18-2010
20100038664Semiconductor Chip and Method for Producing a Semiconductor Chip - A semiconductor chip includes a carrier and a semiconductor body, which includes a semiconductor layer sequence having an active region provided for generating radiation. The carrier has a first carrier area facing the semiconductor body and a second carrier area remote from the semiconductor body. The semiconductor body is cohesively fixed to the carrier by means of a connection layer. A plurality of reflective or scattering elements are formed between the second carrier area and the active region.02-18-2010
20100038663LED LIGHT RECYCLING FOR LUMINANCE ENHANCEMENT AND ANGULAR NARROWING - Some embodiments provide a luminance-enhanced light source. These embodiments include a thin-film LED mounted on a substrate and with a defined upper surface approximately hemispherically emitting light, with the upper surface being diffusely transmissive, a lower first layer of identically defined linear prismatic film separated from the upper surface by a non-evanescent air gap so as to cover the upper surface, a upper second layer of linear prismatic film, identical to but oriented orthogonally to the first layer, and a circumferential vertical reflective wall bordering on both of the first and second layers and extending in height from the substrate to the top of the second layer.02-18-2010
20100038666Lens Arrangement and LED Display Device - A lens arrangement for an LED display device includes a lens. The lens has a first lens surface and an optical axis. The optical axis penetrates the first lens surface of the lens. Furthermore, the lens arrangement includes a transparent transition body, which is firmly coupled with the lens on the first lens surface, which is more temperature-resistant than the lens and which has an optical axis that is parallel to the optical axis of the lens.02-18-2010
20100038660TWO-PHASE COOLING FOR LIGHT-EMITTING DEVICES - System, method, and apparatus for two phase cooling in light-emitting devices are disclosed. In one aspect of the present disclosure, an apparatus includes a light-emitting device and a two-phase cooling apparatus coupled to the light-emitting device. The coupling of the two-phase cooling apparatus and the light-emitting device is operatively configured such that thermal coupling between the light-emitting device and the two-phase cooling apparatus enables, when, in operation, heat generated from the light-emitting device to be absorbed by a substance of a first phase in the two-phase cooling apparatus to convert the substance to a second phase.02-18-2010
20120273822Light-Emitting Element, Light-Emitting Device, and Lighting Device - Disclosed is a light-emitting element with a microcavity structure which is capable of amplifying a plurality of wavelengths to give emission of a desired color. The light-emitting element includes a pair of electrodes and an EL layer having a light-emitting substance interposed between the pair of electrodes. One of the pair of electrodes gives a reflective surface and the other electrode gives a semi-reflective surface. The light-emitting element is arranged so that the emission of the light-emitting substance covers at least two wavelengths λ and an optical path length L between