Class / Patent application number | Description | Number of patent applications / Date published |
257096000 | Plural heterojunctions in same device | 72 |
20080210960 | Display device - In one embodiment, a display device includes: a first electrode; a hole transfer layer which is formed on the first electrode, the hole transfer layer comprising a first host used as a hole transfer material and a first dopant used as an electron accepting material; an emitting material layer which is formed on the hole transfer layer, the emitting material layer comprising red, blue and green light material layers stacked in sequence; an electron transfer layer which is formed on the emitting material layer, the electron transfer layer comprising a second host used as an electron transfer material and a second dopant used as an electron donating material; and a second electrode which is formed on the electron transfer layer. | 09-04-2008 |
20080217632 | Gan-Based III-V Compound Semiconductor Light-Emitting Element and Method for Manufacturing Thereof - A GaN-based III-V group compound semiconductor light-emitting element having high light-emitting efficiency and high reliability at a light-emitting wavelength of 440 nm or more is provided. | 09-11-2008 |
20080230794 | Pn Junction Type Group III Nitride Semiconductor Light-Emitting Device - A pn junction type Group III nitride semiconductor light-emitting device | 09-25-2008 |
20080251804 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - A nitride semiconductor light-emitting device includes a p-type contact layer, a p-type intermediate layer below the p-type contact layer, and a p-type cladding layer below the p-type intermediate layer. Band gap energy differences between the p-type contact layer and the p-type intermediate layer and also between the p-type intermediate layer and the p-type cladding layer are, respectively, 200 meV or below. | 10-16-2008 |
20080283853 | Light-Emitting Diode, Light-Emitting Diode Substrate and Production Method of Light-Emitting Diode - The light-emitting diode is a light-emitting diode including a light-converting material substrate and a semiconductor layer formed on the light-converting material substrate, wherein the light-converting material substrate includes a solidified body in which at least two or more oxide phases selected from a simple oxide and a complex oxide are formed continuously and three-dimensionally entangled with each other, at least one oxide phase in the solidified body comprises a metal element capable of emitting fluorescence, and the semiconductor layer includes a plurality of compound semiconductor layers and has at least a light-emitting layer capable of emitting visible light. A light-emitting diode substrate forms a semiconductor, ensuring that the crystal-structure matching with a semiconductor for the formation of a light-emitting diode is good, a good semiconductor layer with less defects can be formed, good-efficiency light emission can be obtained from a light-emitting layer formed in the semiconductor layer, uniform florescence can be emitted by light from the light-emitting layer in the semiconductor layer, and light can be efficiently out put; and a color unevenness-free light-emitting diode using the substrate. | 11-20-2008 |
20080296595 | LIGHT EMITTING DIODE WITH HIGH ILLUMINATION - A light emitting diode ( | 12-04-2008 |
20080315225 | SEMICONDUCTOR LIGHT EMITTING DEVICE - Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting device comprises a p-type substrate, a p-type semiconductor layer, an active layer, and an n-type semiconductor layer. The p-type semiconductor layer is formed on the p-type substrate. The active layer is formed on the p-type semiconductor layer. The n-type semiconductor layer is formed on the active layer. | 12-25-2008 |
20090008658 | Infrared Emitting Diode and Method of Its Manufacture - An infrared emitting diode that can be utilized as a high power and rapidly responsive infrared light source for both infrared and remote control communications is disclosed which comprises at least one p-type clad layer containing Al | 01-08-2009 |
20090008659 | NITRIDE SEMICONDUCTOR STACKED STRUCTURE AND SEMICONDUCTOR OPTICAL DEVICE, AND METHODS FOR MANUFACTURING THE SAME - A nitride semiconductor stacked structure having good working efficiency includes a p-type nitride semiconductor layer of low resistance, which is formed from an organometallic compound, compounds including Group V elements, including ammonia and a hydrazine derivative, and a p-type impurity material on a substrate. The p-type nitride layer has a carbon concentration not higher than 1×10 | 01-08-2009 |
20090008660 | ZnO-CONTAINING SEMICONDUCTOR LAYER AND ZnO-CONTAINING SEMICONDUCTOR LIGHT EMITTING DEVICE - A ZnO-containing semiconductor layer contains Se or S added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or semiconductor which is excited by the emitted ultraviolet light and emits visual light, visual light at various wavelengths can be emitted. | 01-08-2009 |
20090008661 | LIGHT-EMITTING DIODE AND FABRICATION METHOD THEREOF - A light-emitting diode ( | 01-08-2009 |
20090039364 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer, a first thin insulating layer, and a second conductive type semiconductor layer. The active layer is formed on the first conductive type semiconductor layer. The first thin insulating layer is formed on the active layer. The second conductive type semiconductor layer is formed on the thin insulating layer. | 02-12-2009 |
20090045419 | Semiconductor light-emitting device with high light-extraction efficiency and method for fabricating the same - The invention discloses a semiconductor light-emitting device and a method of fabricating the same. The semiconductor light-emitting device according to the invention includes a substrate, a first semiconductor material layer, a multi-layer structure and an ohmic electrode structure. The substrate has a first upper surface and a plurality of recesses formed on the first upper surface. The first semiconductor material layer is formed on the first upper surface of the substrate and has a second upper surface. The multi-layer structure is formed on the second upper surface of the first semiconductor material layer and includes a light-emitting region. The ohmic electrode structure is formed on the multi-layer structure. In particular, the first semiconductor material layer has a refractive index different from those of the substrate and a bottom-most layer of the multi-layer structure. | 02-19-2009 |
20090057696 | Light emitting diode device and manufacturing method therof - A light-emitting diode device (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first n-type semiconductor layer, an n-type three-dimensional electron cloud structure, a second n-type semiconductor layer, an active layer and a p-type semiconductor layer. The first n-type semiconductor layer, the n-type three-dimensional electron cloud structure, the second n-type semiconductor layer, the active layer and the p-type semiconductor layer are subsequently grown on the substrate. | 03-05-2009 |
20090114933 | GaN BASED SEMICONDUCTOR LIGHT EMITTING DEVICE AND LAMP - A method for producing a gallium nitride based compound semiconductor light emitting device which is excellent in terms of the light emitting properties and the light emission efficiency and a lamp is provided. In such a method for producing a gallium nitride based compound semiconductor light emitting device, which is a method for producing a GaN based semiconductor light emitting device having at least a buffer layer, an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer on a translucent substrate, on which an uneven pattern composed of a convex shape and a concave shape is formed, the buffer layer is formed by a sputtering method conducted in an apparatus having a pivoted magnetron magnetic circuit and the buffer layer contains AlN, ZnO, Mg, or Hf. | 05-07-2009 |
20090121241 | Wire bond free wafer level LED - A wire-bond free semiconductor device with two electrodes both of which are accessible from the bottom side of the device. The device is fabricated with two electrodes that are electrically connected to the oppositely doped epitaxial layers, each of these electrodes having leads with bottom-side access points. This structure allows the device to be biased with an external voltage/current source, obviating the need for wire-bonds or other such connection mechanisms that must be formed at the packaging level. Thus, features that are traditionally added to the device at the packaging level (e.g., phosphor layers or encapsulants) may be included in the wafer level fabrication process. Additionally, the bottom-side electrodes are thick enough to provide primary structural support to the device, eliminating the need to leave the growth substrate as part of the finished device. | 05-14-2009 |
20090121242 | COMPOUND SEMICONDUCTOR LIGHT-EMITTING DIODE AND METHOD FOR FABRICATION THEREOF - A compound semiconductor light-emitting diode includes a light-emitting layer formed of aluminum-gallium-indium phosphide, a light-emitting part | 05-14-2009 |
20090121243 | LIGHT EMITTING DEVICES - Light-emitting devices, and related components, systems and methods are disclosed. | 05-14-2009 |
20090127572 | Nitride Semiconductor Light Emitting Device - There is provided a nitride semiconductor light emitting device capable of inhibiting output deterioration of light emission caused by quality deterioration of a nitride semiconductor layer due to lattice-mismatching between a substrate and the nitride semiconductor layer, and utilizing light traveling to the substrate efficiently, while forming a light emitting device of a vertical type which has one electrode on a back surface of the substrate by using the substrate made of SiC. A light reflecting layer ( | 05-21-2009 |
20090134410 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - There is provided a method of manufacturing a nitride semiconductor light emitting device. A method of manufacturing a nitride semiconductor light emitting device according to an aspect of the invention may include: nitriding a surface of an m-plane sapphire substrate; forming a high-temperature buffer layer on the m-plane sapphire substrate; depositing a semi-polar (11-22) plane nitride thin film on the high-temperature buffer layer; and forming a light emitting structure including a first nitride semiconductor layer, an active layer, and a second nitride semiconductor layer on the semi-polar (11-22) plane nitride thin film. | 05-28-2009 |
20090146163 | HIGH BRIGHTNESS LIGHT EMITTING DIODE STRUCTURE - The present invention discloses a high brightness LED structure, wherein a highly-doped n-type AlInP island structure is formed on a portion of the surface of an AlGaInP semiconductor stack structure and functions as a current barrier structure. The island structure is covered by a p-type window layer and positioned below a p-type ohmic electrode. The island structure can make more input current flow to the AlGaInP semiconductor stack structure not shielded by the light-emitting side electrode and thus can optimize the current distribution and promote the light-emitting efficiency. | 06-11-2009 |
20090152578 | III-Nitride Semiconductor Light Emitting Device - The present disclosure relates to a III-nitride semiconductor light emitting device which improves external quantum efficiency by using a p-type nitride semiconductor layer with a rough surface, the p-type nitride semiconductor layer including: a first nitride semiconductor layer with a first doping concentration, a second nitride semiconductor layer with a second doping concentration lower than the first doping concentration and with the rough surface, and a third nitride semiconductor layer with a higher doping concentration than a second doping concentration. | 06-18-2009 |
20090159909 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH ELECTRODE PATTERN - A nitride semiconductor light-emitting device with an electron pattern that applies current uniformly to an active layer to improve light emission efficiency is provided. The nitride semiconductor light-emitting device includes multiple layers of a substrate, an n-type nitride layer, an active layer of a multi-quantum-well structure, and a p-type nitride layer. The nitride semiconductor light-emitting device further includes a p-electrode pattern and an n-electrode pattern. The p-electrode pattern includes one or more p-pads disposed on the p-type nitride layer, and one or more p-fingers extending from the p-pads. The n-electrode pattern includes one or more n-pads disposed on an exposed region of the n-type nitride layer to correspond to the p-pads, and one or more n-fingers extending from the n-pads. The n-fingers have identical resistance, and the p-fingers have identical resistance to improve current spreading to the active layer. | 06-25-2009 |
20090302335 | Method of Fabricating Light Emitting Device and Compound Semiconductor Wafer and Light Emitting Device - A Metal Organic Vapor Phase Epitaxy step of growing a light emitting layer section | 12-10-2009 |
20100019257 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - There are provided a nitride semiconductor light emitting device having a structure enabling enhanced external quantum efficiency by effectively taking out light which is apt to repeat total reflection within a semiconductor lamination portion and a substrate and attenuate, and a method for manufacturing the same. A semiconductor lamination portion ( | 01-28-2010 |
20100019258 | SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a semiconductor light emitting device that can easily dissipate heat, improve current spreading efficiency, and reduce defects by blocking dislocations occurring when a semiconductor layer is grown to thereby increase reliability. A semiconductor light emitting device including a substrate, a light emitting structure having an n-type semiconductor layer, an active layer, and a p-type semiconductor layer sequentially laminated, and an n-type electrode and a p-type electrode formed on the n-type semiconductor layer and the p-type semiconductor layer, respectively, according to an aspect of the invention may include: a metal layer formed in the n-type semiconductor layer and contacting the n-type electrode. | 01-28-2010 |
20100032696 | Light-Emitting Diode with Textured Substrate - A light-emitting diode (LED) device is provided. The LED device has raised semiconductor regions formed on a substrate. LED structures are formed over the raised semiconductor regions such that bottom contact layers and active layers of the LED device are conformal layers. The top contact layer has a planar surface. In an embodiment, the top contact layers are continuous over a plurality of the raised semiconductor regions while the bottom contact layers and the active layers are discontinuous between adjacent raised semiconductor regions. | 02-11-2010 |
20100270568 | Light Emitting Device and Method of Fabricating the Same - A light emitting device comprises a light emitting layer section having a double heterostructure of an n-type cladding layer, an active layer and a p-type cladding layer, each composed of AlGaInP stacked in this order. Supposing a bonding object layer having a first main surface side as p type and a second main surface side as n type, a light extraction side electrode is formed to cover the first main surface partially. An n-type transparent device substrate composed of Group III-V compound semiconductor having greater band gap energy than the active layer is bonded to the second main surface of the bonding object layer. On one sides of the transparent device substrate and the bonding object layer, a bonding surface to the other is formed, and an InGaP intermediate layer is formed to have a high concentration Si doping layer formed on the bonding surface side. | 10-28-2010 |
20100327299 | P-CONTACT LAYER FOR A III-P SEMICONDUCTOR LIGHT EMITTING DEVICE - A device includes a semiconductor structure with at least one III-P light emitting layer disposed between an n-type region and a p-type region. The semiconductor structure further includes a GaAs | 12-30-2010 |
20110049543 | LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEROF - Provides is a semiconductor light-emitting device. The semiconductor light-emitting device includes a first conduction-type cladding layer, an active layer, and a second conduction-type cladding layer, on a substrate. Portions of the substrate and the first conduction-type cladding layer are removed. According to the light-emitting device having the above-construction, damage to a grown epitaxial layer is reduced, and a size of an active layer increases, so that a light-emission efficiency increases. Even when a size of a light-emitting device is small, a short-circuit occurring between electrodes can be prevented. Further, brightness and reliability of the light-emitting device are improved. | 03-03-2011 |
20110186883 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHT SYSTEM - A light emitting device includes a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, and a light extraction structure that extracts light from the light emitting structure. The light extraction structure includes at least a first light extraction zone and a second light extraction zone, where a period and/or size of first concave and/or convex structures of the first light extraction zone is different from a period and/or size of second concave and/or convex structures of the second light extraction zone. | 08-04-2011 |
20110284891 | P-CONTACT LAYER FOR A Ill-P SEMICONDUCTOR LIGHT EMITTING DEVICE - A device includes a semiconductor structure with at least one III-P light emitting layer disposed between an n-type region and a p-type region. The semiconductor structure further includes a GaAs | 11-24-2011 |
20120001210 | LIGHT-EMITTING DEVICE AND PROJECTOR - A light-emitting device includes a first layer, a second layer, and a semiconductor body interposed between the first and second layers, wherein the semiconductor body has a first fine-wall-shape member, a second fine-wall-shape member, and a semiconductor member interposed between the first and second fine-wall-shape members, the first and second fine-wall-shape members have a third layer, a fourth layer, and a fifth layer interposed between the third and fourth layers, the fifth layer is a layer that generates light and guides the light, the third and fourth layers are layers that guide the light generated in the fifth layer, the first and second layers are layers that suppress leakage of the light generated in the fifth layer, and the propagating direction of the light generated in the fifth layer intersects with the first and second fine-wall-shape members. | 01-05-2012 |
20120132940 | OPTICAL SEMICONDUCTOR DEVICE - According to one embodiment, an optical semiconductor device includes an n-type semiconductor layer, a p-type semiconductor layer, and a functional part. The functional part is provided between the n-type semiconductor layer and the p-type semiconductor layers. The functional part includes a plurality of active layers stacked in a direction from the n-type semiconductor layer toward the p-type semiconductor layer. At least two of the active layers include a multilayer stacked body, an n-side barrier layer, a well layer and a p-side barrier layer. The multilayer stacked body includes a plurality of thick film layers and a plurality of thin film layers alternately stacked in the direction. The n-side barrier layer is provided between the multilayer stacked body and the p-type layer. The well layer is provided between the n-side barrier layer and the p-type layer. The p-side barrier layer is provided between the well layer and the p-type layer. | 05-31-2012 |
20130075771 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes first and second electrode layers, a and second semiconductor layers, a light emitting layer and a first intermediate layer. The first electrode layer has a metal portion having through-holes. The second electrode layer is stacked with the first electrode layer along a stacked direction, and light-reflective. The first semiconductor layer is provided between the first and second electrode layers, and has a first conductivity type. The second semiconductor layer is provided between the first semiconductor layer and the second electrode layer, and has a second conductivity type. The light emitting layer is provided between the first and second semiconductor layers. The first intermediate layer is provided between the second semiconductor layer and the second electrode layer, transmissive to light emitted from the light emitting layer, and includes first contact portions and a first non-contact portion. | 03-28-2013 |
20130248902 | LIGHT EMITTING ELEMENT AND METHOD OF MAKING SAME - A light emitting element has a substrate of gallium oxides and a pn-junction formed on the substrate. The substrate is of gallium oxides represented by: (Al | 09-26-2013 |
20130277696 | LIGHT-EMITTING ELEMENT, LIGHT-EMITTING ELEMENT UNIT, AND LIGHT-EMITTING ELEMENT PACKAGE - In a light-emitting element | 10-24-2013 |
20140175476 | Method of Manufacturing a Light Emitting Diode Comprising a Layer of AIGaN Heterogeneous - The process for the manufacture of a light-emitting diode comprises the following stages: the formation of a stack ( | 06-26-2014 |
20140231839 | Semiconductor Light Emitting Device - The present disclosure relates to a semiconductor light emitting device, comprising: a plurality of semiconductor layers, including a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer, generating light via electron-hole recombination; a first electrode, supplying either electrons or holes to the plurality of semiconductor layers; a second electrode, supplying, to the plurality of semiconductor layers, electrons if the holes are supplied by the first electrode, or holes if the electrons are supplied by the first electrode; a non-conductive distributed bragg reflector coupled to the plurality of semiconductor layers, reflecting the light from the active layer; and a first light-transmitting film coupled to the distributed bragg reflector from a side opposite to the plurality of semiconductor layers with respect to the non-conductive distributed bragg reflector, with the first light-transmitting film having a refractive index lower than an effective refractive index of the distributed bragg reflector. | 08-21-2014 |
20140264408 | SEMICONDUCTOR STRUCTURES HAVING ACTIVE REGIONS COMPRISING INGAN, METHODS OF FORMING SUCH SEMICONDUCTOR STRUCTURES, AND LIGHT EMITTING DEVICES FORMED FROM SUCH SEMICONDUCTOR STRUCTURES - Semiconductor structures include an active region between a plurality of layers of InGaN. The active region may be at least substantially comprised by InGaN. The plurality of layers of InGaN include at least one well layer comprising In | 09-18-2014 |
20140312369 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device including a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; a first electrode connected to the first conductivity type semiconductor layer; a second electrode including a contact layer connected to the second conductivity type semiconductor layer, a capping layer disposed on the contact layer, and a metal buffer layer disposed on the capping layer, the metal buffer layer encompasses an upper and lateral surface of the capping layer; a first insulating layer disposed on the light emitting structure such that the first and second electrodes are exposed; and a second insulating layer disposed on the first insulating layer such that at least a portion of the first electrode and at least a portion of the metal buffer layer are exposed. | 10-23-2014 |
20140312370 | OPTOELECTRONIC DEVICE - An optoelectronic device comprising a first semiconductor layer having a first lattice constant; a second semiconductor layer having a second lattice constant, wherein the second lattice constant is smaller than the first lattice constant; and a first buffer layer formed between the first semiconductor layer and the second semiconductor layer, wherein a lattice constant of one side of the first buffer layer near the second semiconductor layer is smaller than the second lattice constant. | 10-23-2014 |
20140327022 | LIGHT EMITTING DEVICE - A light emitting device includes a substrate, a buffer layer, a first conductive layer, an active layer and a third conductive semiconductor layer. The first conductive layer has a prescribed tensile stress, and a second conductive semiconductor layer has a prescribed compressive stress. | 11-06-2014 |
20150034982 | LIGHT EMITTING DIODE STRUCTURE - A light emitting diode structure is provided. The light emitting diode structure comprises a substrate, a light emitting multi-layer structure, a first current blocking layer, a first current spreading layer, a second current blocking layer and a second current spreading layer. The light emitting multi-layer structure is formed on the substrate by way of stacking. The first current blocking layer is formed on part of the light emitting multi-layer structure. The first current spreading layer covers the first current blocking layer and the light emitting multi-layer structure. The second current blocking layer is formed on part of the first current spreading layer. An orthogonal projection of the second current blocking layer is disposed in an orthogonal projection of the first current blocking layer. The second current spreading layer covers the second current blocking layer and the first current spreading layer. | 02-05-2015 |
20150076537 | LIGHT-EMITTING DIODE - The present disclosure provides a light-emitting diode, including: a silicon substrate having a first surface and a second surface opposite to the first surface; a buffer layer disposed over the first surface of the substrate, wherein the buffer layer includes alternating SiC and In | 03-19-2015 |
20150076538 | SEALED SEMICONDUCTOR LIGHT EMITTING DEVICE - A method according embodiments of the invention includes providing a wafer of semiconductor devices. The wafer of semiconductor devices includes a semiconductor structure comprising a light emitting layer sandwiched between an n-type region and a p-type region. The wafer of semiconductor devices further includes first and second metal contacts for each semiconductor device. Each first metal contact is in direct contact with the n-type region and each second metal contact is in direct contact with the p-type region. The method further includes forming a structure that seals the semiconductor structure of each semiconductor device. The wafer of semiconductor devices is attached to a wafer of support substrates. | 03-19-2015 |
20150115299 | III-NITRIDE LIGHT EMITTING DEVICE - A device includes a substrate ( | 04-30-2015 |
20150349194 | NANOSTRUCTURE MATERIAL METHODS AND DEVICES - In one aspect, structures are provided comprising: a substrate having a first surface and a second surface; and a polymeric layer disposed on the first surface of the substrate, the polymeric layer comprising a polymer and a plurality of light-emitting nanocrystals; the polymeric layer having a patterned surface, the patterned surface having a patterned first region having a first plurality of recesses and a patterned second region having a second plurality of recesses, wherein the plurality of recesses in each region has a first periodicity in a first direction, and a second periodicity in a second direction which intersects the first direction, wherein the first periodicity of the first region is different from the first periodicity of the second region. | 12-03-2015 |
20150349212 | NANOSTRUCTURE MATERIAL METHODS AND DEVICES - In one aspect, structures are provided comprising: a substrate having a first surface and a second surface; and a polymeric layer disposed on the first surface of the substrate, the polymeric layer comprising a polymer and a plurality of light-emitting nanocrystals; the polymeric layer having a patterned surface, the patterned surface having a patterned first region having a first plurality of recesses and a patterned second region having a second plurality of recesses, wherein the plurality of recesses in each region has a first periodicity in a first direction, and a second periodicity in a second direction which intersects the first direction, wherein the first periodicity of the first region is different from the first periodicity of the second region. | 12-03-2015 |
20160093767 | LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - A light emitting diode includes a base and a semiconductor structure mounted on the base. The base includes a substrate that has a first surface and a second surface located opposite to the first surface. The first surface of the substrate forms a microstructure. The bottom of the microstructure covers the first surface. The microstructure is a plurality of mental portion bended continuously and includes a plurality of protruding structures. A top surface of each protruding structure is a flat plate. A method for manufacturing the light emitting diode is also provided. | 03-31-2016 |
257097000 | More than two heterojunctions in same device | 22 |
20080265265 | InGaAlN LIGHT-EMITTING DEVICE CONTAINING CARBON-BASED SUBSTRATE AND METHOD FOR MAKING THE SAME - One embodiment of the present invention provides an InGaAlN-based semiconductor light-emitting device which comprises an InGaAlN-based semiconductor multilayer structure and a carbon-based substrate which supports InGaAlN-based semiconductor multilayer structure, wherein the carbon-based substrate comprises at least one carbon-based layer. This carbon-based substrate has both high thermal conductivity and low electrical resistivity. | 10-30-2008 |
20080283854 | LIGHT EMITTING DIODE DEVICE LAYER STRUCTURE USING AN INDIUM GALLIUM NITRIDE CONTACT LAYER - A light emitting diode device layer structure including a p-type contact layer that contains at least some indium (In), wherein the p-type contact layer is a not-intentionally doped strained nitride contact layer. | 11-20-2008 |
20080315226 | LIGHT EMITTING DIODE, OPTOELECTRONIC DEVICE AND METHOD OF FABRICATING THE SAME - A light emitting diode structure including a substrate, a strain-reducing seed layer, an epitaxial layer, a first electrode and a second electrode is provided. The strain-reducing seed layer having a plurality of clusters is disposed on the substrate, and the material of the clusters is selected from a group consisting of aluminum nitride, magnesium nitride and indium nitride. The epitaxial layer includes a first type doped semiconductor layer, a light emitting layer and a second type doped semiconductor layer. The first electrode is disposed on the exposed first type doped semiconductor layer and electrically connected thereto. The second electrode is disposed on the second type doped semiconductor layer and electrically connected thereto. | 12-25-2008 |
20090001394 | Semiconductor structure combination for epitaxy of semiconductor optoelectronic device - The invention discloses a semiconductor structure combination for the epitaxy of a semiconductor optoelectronic device and manufacture thereof. The semiconductor structure combination according to the invention includes a substrate and a semiconductor material. The substrate has an upper surface and a recess formed on the upper surface. The sidewalls of the recess provide at least one first site for the growth of at least one first epitaxial crystal of the semiconductor material toward a first preferred orientation. A bottom of the recess provides a second site for the growth of a second epitaxial crystal of the semiconductor material toward the first preferred orientation. Flat regions adjacent to the recess provide at least one third site for the growth of at least one third epitaxial crystal of the semiconductor material toward the first preferred orientation. | 01-01-2009 |
20090072254 | Polarization doping in nitride based diodes - A light emitting device comprising a three-dimensional polarization-graded (3DPG) structure that improves lateral current spreading within the device without introducing additional dopant impurities in the epitaxial structures. The 3DPG structure can include a repeatable stack unit that may be repeated several times within the 3DPG. The stack unit includes a compositionally graded layer and a silicon (Si) delta-doped layer. The graded layer is compositionally graded over a distance from a first material to a second material, introducing a polarization-induced bulk charge into the structure. The Si delta-doped layer compensates for back-depletion of the electron gas at the interface of the graded layers and adjacent layers. The 3DPG facilitates lateral current spreading so that current is injected into the entire active region, increasing the number of radiative recombination events in the active region and improving the external quantum efficiency and the wall-plug efficiency of the device. | 03-19-2009 |
20090078947 | SEMICONDUCTOR LIGHT EMITTING DEVICE - An end face emission type semiconductor light emitting device which include: a substrate; a first conductive type clad layer stacked on the substrate; an active region layer including an active layer stacked on the first conductive type clad layer; a second conductive type clad layer stacked on the active region layer such that a thickness of a portion thereof at least over an emission region of the active region layer in an emission end face adjacent area is thinner than a thickness of the other portion; and a second conductive type regrowth layer stacked on the second conductive type clad layer, which has a higher refractive index than the second conductive type clad layer. | 03-26-2009 |
20090090923 | METHOD FOR MANUFACTURING A SEMICONDUCTOR LIGHT-EMITTING DEVICE AND SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device and method for manufacturing the semiconductor light-emitting device includes a mask layer etching process on first and second mask layers provided on a Group-III nitride-based compound semiconductor substrate, the mask layer with a higher etching rate being closer to the p-type semiconductor layer; a semiconductor layer etching process; a side-etching process that selectively etches the side of the mask layer with the high etching rate to define a groove portion with a portion of the p-type semiconductor layer exposed; a ZrO | 04-09-2009 |
20090101927 | Method of manufacturing light emitting device - A method of manufacturing a semiconductor light emitting device employs a substrate formed by successively stacking an n-type semiconductor layered portion including an AlGaN layer, a light emitting layer containing In and a p-type semiconductor layered portion on a group III nitride semiconductor substrate having a larger lattice constant than AlGaN. This method includes the steps of selectively etching the substrate from the side of the p-type semiconductor layered portion along a cutting line to expose the AlGaN layer along the cutting line, forming a division guide groove along the cutting line on the exposed AlGaN layer, and dividing the substrate along the division guide groove. | 04-23-2009 |
20090140274 | III-Nitride Light Emitting Device Including Porous Semiconductor Layer - A semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region is grown over a porous III-nitride region. A III-nitride layer comprising InN is disposed between the light emitting layer and the porous III-nitride region. Since the III-nitride layer comprising InN is grown on the porous region, the III-nitride layer comprising InN may be at least partially relaxed, i.e. the III-nitride layer comprising InN may have an in-plane lattice constant larger than an in-plane lattice constant of a conventional GaN layer grown on sapphire. | 06-04-2009 |
20090272994 | SEMICONDUCTOR LIGHT EMITTING DEVICE - The embodiment discloses a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, a first electrode formed under the first conductive semiconductor layer and comprising a patterns of a predetermined shape, and a nitride semiconductor layer between the patterns of the first electrode. | 11-05-2009 |
20100019259 | LED Semiconductor Body and Use of an LED Semiconductor Body - An LED semiconductor body includes at least one first radiation-generating active layer and at least one second radiation-generating active layer, wherein the LED semiconductor body has a photonic crystal. | 01-28-2010 |
20100025702 | SUBSTRATE-FREE FLIP CHIP LIGHT EMITTING DIODE - A substrate-free LED device is provided. The LED device comprises a substrate, an epitaxial layer disposed on the substrate, a first electrode disposed on a portion of the epitaxial layer, a second electrode disposed on another portion of the epitaxial layer, and a protection layer, disposed over the epitaxial layer. It is noted that in the LED device, the substrate comprises, for example but not limited to, high heat-sink substrate, and the protection layer comprises, for example but not limited to, high heat-sink, high transparent material. | 02-04-2010 |
20110049544 | NITRIDE SEMICONDUCTOR ELEMENT, METHODS FOR MANUFACTURING NITRIDE SEMICONDUCTOR ELEMENT AND NITRIDE SEMICONDUCTOR LAYER, AND NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT - Described herein is a method for manufacturing a nitride semiconductor layer by stacking, on a silicon nitride layer, the first nitride semiconductor layer having a surface inclined with respect to the surface of the silicon nitride layer and then stacking the second nitride semiconductor layer on the first nitride semiconductor layer, a nitride semiconductor element and a nitride semiconductor light-emitting element each including the nitride semiconductor layer; and a method for manufacturing the nitride semiconductor element. | 03-03-2011 |
20110127550 | LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE - Provided is a light emitting device, which includes a second conductive type semiconductor layer, an active layer, a first conductive type semiconductor layer, and a intermediate refraction layer. The active layer is disposed on the second conductive type semiconductor layer. The first conductive type semiconductor layer is disposed on the active layer. The intermediate refraction layer is disposed on the first conductive type semiconductor layer. The intermediate refraction layer has a refractivity that is smaller than that of the first conductive type semiconductor layer and is greater than that of air. | 06-02-2011 |
20110180828 | SOLID STATE LIGHTING DEVICES AND ASSOCIATED METHODS OF MANUFACTURING - Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state light device includes a light emitting diode with an N-type gallium nitride (GaN) material, a P-type GaN material spaced apart from the N-type GaN material, and an indium gallium nitride (InGaN) material directly between the N-type GaN material and the P-type GaN material. At least one of the N-type GaN, InGaN, and P-type GaN materials has a non-planar surface. | 07-28-2011 |
20120025234 | Light-Emitting Diode with Textured Substrate - A light-emitting diode (LED) device is provided. The LED device has raised semiconductor regions formed on a substrate. LED structures are formed over the raised semiconductor regions such that bottom contact layers and active layers of the LED device are conformal layers. The top contact layer has a planar surface. In an embodiment, the top contact layers are continuous over a plurality of the raised semiconductor regions while the bottom contact layers and the active layers are discontinuous between adjacent raised semiconductor regions. | 02-02-2012 |
20120074442 | LIGHT EMITTING DIODE MODULE - A light emitting diode module having improved luminous efficiency is provided. The light emitting diode module includes: a light emitting chip; a phosphor layer formed of phosphor materials emitting light having a wavelength longer than the light emitted from the light emitting chip using light emitted from the light emitting chip as an excitation source; and a reflection plate that is disposed between the light emitting chip and the phosphor layer and that reflects the light emitted by the phosphor layer. | 03-29-2012 |
20120261687 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a nitride semiconductor light emitting device including: n-type and p-type nitride semiconductor layers; an active layer disposed between the n-type and p-type nitride semiconductor layers; and an electron injection layer disposed between the n-type nitride semiconductor layer and the active layer. The electron injection layer has a multilayer structure, in which three or more layers having different energy band gaps are stacked, and the multilayer structure is repetitively stacked at least twice. At least one layer among the three or more layers has a reduced energy band gap in individual multilayer structures in a direction toward the active layer, and the layer having the lowest energy band gap has an increased thickness in individual multilayer structures in a direction toward the active layer. | 10-18-2012 |
20140231840 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR PRODUCING SAME - Disclosed is a nitride semiconductor light-emitting element comprising a p-type nitride semiconductor layer | 08-21-2014 |
20140319559 | LIGHT-EMITTING DEVICE AND THE MANUFACTURING METHOD THEREOF - A light-emitting device includes: a light-emitting stack having an upper surface having a first surface roughness less than 0.2 nm; and an as-cut wafer comprising an irregularly uneven surface facing the light-emitting stack and having a second surface roughness greater than 0.5 μm. | 10-30-2014 |
20140332833 | SUBSTRATE HAVING HETERO-STRUCTURE, METHOD FOR MANUFACTURING THE SAME AND NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE USING THE SAME - Provided is a hetero-substrate that may include a base substrate, a buffer layer disposed on the base substrate, and a first semiconductor layer disposed on the buffer layer, the first semiconductor layer including a nitride semiconductor. A defect blocking layer is disposed on the first semiconductor layer. The defect blocking layer may include a plurality of metal droplets. A second semiconductor layer may be disposed on the defect blocking layer, the second semiconductor layer including a nitride semiconductor. | 11-13-2014 |
20160043280 | LIGHT EMITTING DEVICE AND LIGHTING SYSTEM - Disclosed are a light emitting device, a method of fabricating the same, a light emitting device package, and a lighting system. The light emitting device may include a substrate, a first conductive semiconductor layer on the substrate, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, an ohmic layer on the second conductive semiconductor layer, an insulating layer on the ohmic layer, a first branch electrode electrically connected with the first conductive semiconductor layer, a first pad electrode connected with the first branch electrode for electrical connection with the first conductive semiconductor layer, a second pad electrode in contact with the ohmic layer through the insulating layer, a second branch electrode connected with the second pad electrode on the insulating layer, and a second through electrode passing through the insulating layer to connect the second branch electrode with the ohmic layer. | 02-11-2016 |