Class / Patent application number | Description | Number of patent applications / Date published |
257086000 | Active layer of indirect band gap semiconductor | 22 |
20080197362 | SEMICONDUCTOR LED, OPTO-ELECTRONIC INTEGRATED CIRCUITS (OEIC), AND METHOD OF FABRICATING OEIC - A light emitting diode demonstrating high luminescence efficiency and comprising a Group IV semiconductor such as silicon or germanium equivalent thereto as a basic component formed on a silicon substrate by a prior art silicon process, and a fabricating method of waveguide thereof are provided. The light emitting diode of the invention comprises a first electrode for implanting electrons, a second electrode for implanting holes, and a light emitting section electrically connected to the first and the second electrode, wherein the light emitting section is made out of single crystalline silicon and has a first surface and a second surface facing the first surface, wherein with respect to plane orientation (100) of the first and second surfaces, the light emitting section crossing at right angles to the first and second surfaces is made thinner, and wherein a material having a high refractive index is arranged around the thin film section. | 08-21-2008 |
20080224151 | Nitride-based semiconductor element and method of forming nitride-based semiconductor
- A nitride-based semiconductor element having superior mass productivity and excellent element characteristics is obtained. This nitride-based semiconductor element comprises a substrate comprising a surface having projection portions, a mask layer formed to be in contact with only the projection portions of the surface of the substrate, a first nitride-based semiconductor layer formed on recess portions of the substrate and the mask layer and a nitride-based semiconductor element layer, formed on the first nitride-based semiconductor layer, having an element region. Thus, the first nitride-based semiconductor layer having low dislocation density is readily formed on the projection portions of the substrate and the mask layer through the mask layer serving for selective growth. When the nitride-based semiconductor element layer having the element region is grown on the first nitride-based semiconductor layer having low dislocation density, a nitride-based semiconductor element having excellent element characteristics can be readily obtained. The first nitride-based semiconductor layer is formed through only single growth on the substrate, whereby a nitride-based semiconductor element having excellent mass productivity is obtained. | 09-18-2008 |
20090057688 | OPTICAL SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR - To provide an elemental technique for improving the emission intensity of deep ultraviolet light from a light emitting layer made of an AlGaInN-based material, in particular, an AlGaN-based material. First, an AlN layer is grown on a sapphire surface. The AlN layer is grown under a NH | 03-05-2009 |
20090057689 | LIGHT-EMITTING DEVICE - A light-emitting device includes an active region, an n-type region, a p-type region, an n-electrode and a p-electrode. The active region is formed from a semiconductor material. The semiconductor material has a tetrahedral structure and includes an impurity. The impurity creates at least two energy levels connected with the allowed transition within a band gap of the semiconductor material. The n-type and p-type regions in contact with the active region are disposed between the n-type and p-type regions. An excitation element is configured to inject an electron from the n-type region and inject a hole from the p-type region so as to generate an electron-hole pair in the active region. The active region has a thickness no less than an atomic distance of the semiconductor and no more than 5 nm. | 03-05-2009 |
20090140267 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - Disclosed are a semiconductor light emitting device comprising a single crystalline buffer layer and a manufacturing method thereof. The semiconductor light emitting device comprises a single crystalline buffer layer, and a compound semiconductor structure comprising III and V group elements on the single crystalline buffer layer. | 06-04-2009 |
20100072487 | LIGHT EMITTING DIODE, PACKAGE STRUCTURE AND MANUFACTURING METHOD THEREOF - A light emitting diode (LED), a fabricating method thereof, and a package structure thereof are provided. The LED includes a substrate, a first semiconductor layer disposed on the substrate, an active layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the active layer, a current distribution modifying pattern, a first electrode and a second electrode. The active layer and the second semiconductor layer form a mesa structure and expose a part of the first semiconductor layer. The current distribution modifying pattern is disposed on the second semiconductor layer. The first electrode is disposed on and electrically connected to the first semiconductor layer exposed by the mesa structure. The second electrode is disposed on the current distribution modifying pattern and is electrically connected to the second semiconductor layer. The LED has superior light emitting efficiency. | 03-25-2010 |
20100096641 | LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A light emitting device according to an embodiment is provided. The light emitting device comprises a second electrode layer, a third conductive semiconductor layer comprising a schottky contact region and an ohmic contact region on the second electrode layer, a second conductive semiconductor layer on the third conductive semiconductor layer, an active layer on the second conductive semiconductor layer, a first conductive semiconductor layer on the active layer, and a first electrode layer on the first conductive semiconductor layer. | 04-22-2010 |
20110095309 | SEMICONDUCTOR DEVICE - Semiconductor devices including a light emitting layer, and at least one surface plasmon metal layer in contact with the light emitting layer are provided. The light emitting layer includes an active layer having a first band gap, and one or more barrier layers having a second band gap. The first band gap is smaller than the second band gap. Methods for fabricating semiconductor devices are also provided. | 04-28-2011 |
20120241770 | LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed are a light emitting device, a method for manufacturing the same, a light emitting device package, and a lighting system. The light emitting device includes a first conductive semiconductor layer, an active layer comprising a well layer and a barrier layer on the first conductive layer, and a second conductive semiconductor layer on the active layer. The well layer includes a first well layer closest to the first conductive semiconductor layer and having a first energy bandgap, a third well layer closest to the second conductive semiconductor layer and having a third energy bandgap, and a second well layer interposed between the first and third well layers and having a second energy bandgap. The third energy bandgap of the third well layer is greater than the second energy bandgap of the second well layer. | 09-27-2012 |
20130105824 | Method and System for Generating a Photo-Response from MoS2 Schottky Junctions | 05-02-2013 |
20130161653 | ELECTROLUMINESCENCE DEVICE USING INDIRECT BANDGAP SEMICONDUCTOR - This invention provides an electroluminescence device comprising an indirect bandgap semiconductor layer, such as silicon or germanium, having a local conduction-band minimum at the Γ-point in an E-k diagram for using as a light emitting layer, and a direct bandgap semiconductor layer formed by a heterojunction on the indirect bandgap semiconductor layer for using as an electron supply means transporting electrons from a Γ-valley to a Γ-valley when a forward-biased voltage is applied, wherein a light emission is occurred by recombining the electrons transported to the Γ-valley of the indirect bandgap semiconductor layer with holes located at a valance band maximum of the indirect bandgap semiconductor layer. | 06-27-2013 |
20140284631 | METHOD AND SYSTEM FOR GENERATING A PHOTO-RESPONSE FROM MoS2 SCHOTTKY JUNCTIONS - Devices incorporating a single to a few-layer MoS | 09-25-2014 |
20150048387 | Method and System For Generating a Photo-Response From MoS2 Schottky Junctions - Devices incorporating a single to a few-layer MoS | 02-19-2015 |
257087000 | With means to facilitate electron-hole recombination (e.g., isoelectronic traps such as nitrogen in GaP) | 9 |
20090101920 | WHITE LIGHT EMITTING ELEMENT AND WHITE LIGHT SOURCE - A white light source has an excitation light source and a white light emitting element provided at a position which allows the transmission of light from the excitation light source to generate white light through irradiation with the light from the excitation light source. The white light emitting element has a sapphire substrate made of sapphire or the like which transmits visible light, an InGaAlN semiconductor layer formed on a surface of the sapphire substrate to emit red light through irradiation with visible light, and a fluorescent layer formed on the surface opposite to the surface provided with the semiconductor layer to emit yellow light or green light through irradiation with visible light. | 04-23-2009 |
20090166645 | LIGHT EMITTING DIODE HAVING A THERMAL CONDUCTIVE SUBSTRATE AND METHOD OF FABRICATING THE SAME - Disclosed are a light emitting diode having a thermal conductive substrate and a method of fabricating the same. The light emitting diode includes a thermal conductive insulating substrate. A plurality of metal patterns are spaced apart from one another on the insulating substrate, and light emitting cells are located in regions on the respective metal patterns. Each of the light emitting cells includes a P-type semiconductor layer, an active layer and an N-type semiconductor layer. Meanwhile, metal wires electrically connect upper surfaces of the light emitting cells to adjacent metal patterns. Accordingly, since the light emitting cells are operated on the thermal conductive substrate, a heat dissipation property of the light emitting diode can be improved. | 07-02-2009 |
20090261354 | ORGANIC LIGHT EMITTING ELEMENT AND ORGANIC LIGHT EMITTING DEVICE - The present invention relates to an organic light emitting element and an organic light emitting device including the same. An impurity layer close to an electrode is doped with a small amount, and an impurity layer for a p-n junction is doped with a large amount, such that a high current may flow under a low voltage. | 10-22-2009 |
20100032689 | III-Nitride Compound Semiconductor Light Emitting Device - The present invention discloses a III-nitride compound semiconductor light emitting device having an n-type nitride compound semiconductor layer, an active layer grown on the n-type nitride compound semiconductor layer, for generating light by recombination of electron and hole, and a p-type nitride compound semiconductor layer grown on the active layer. The III-nitride compound semiconductor light emitting device includes a plurality of semiconductor layers including a nitride compound semiconductor layer with a pinhole structure grown on the p-type nitride compound semiconductor layer. | 02-11-2010 |
20100051968 | Light-Emitting Element, Light-Emitting Device, and Electronic Device - Disclosed is a light-emitting element having a light-emitting layer which includes a first layer, a second layer, and a third layer provided in this order on an anode side between the anode and a cathode. The first layer has a hole-transporting property, the second layer has a bipolar property, and the third layer has an electron-transporting property, wherein the first layer contains a first fluorescent compound and a hole-transporting organic compound, the second layer contains a phosphorescent compound and a host material, and the third layer contains a second fluorescent compound and an electron-transporting organic compound. The light-emitting layer is also arranged so that the triplet-excitation energy of both the hole-transporting organic compound and the electron-transporting organic compound are greater than that of the host material. The use of the light-emitting layer with the above-mentioned structure enables production of a light-emitting element with improved luminous efficiency and reduced power consumption. | 03-04-2010 |
20100289036 | III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - The present invention provides a Ill-nitride semiconductor light emitting device and a method for manufacturing the same including: a substrate; a plurality of Ill-nitride semiconductor layers formed on the substrate, and provided with an active layer generating light by recombination of electrons and holes; a boundary surface defined between the substrate and the plurality of Ill-nitride semiconductor layers; and a pair of slant surfaces formed from the boundary surface on the substrate and the plurality of Ill-nitride semiconductor layers so as to emit light generated in the active layer to the outside. | 11-18-2010 |
20120012863 | INDIRECT-BANDGAP-SEMICONDUCTOR, LIGHT-EMITTING DIODE - An indirect-bandgap-semiconductor, light-emitting diode. The indirect-bandgap-semiconductor, light-emitting diode includes a plurality of portions including a p-doped portion of an indirect-bandgap semiconductor, an intrinsic portion of the indirect-bandgap semiconductor, and a n-doped portion of the indirect-bandgap semiconductor. The intrinsic portion is disposed between the p-doped portion and the n-doped portion and forms a p-i junction with the p-doped portion, and an i-n junction with the n-doped portion. The p-i junction and the i-n junction are configured to facilitate formation of at least one hot electron-hole plasma in the intrinsic portion when the indirect-bandgap-semiconductor, light-emitting diode is reverse biased and to facilitate luminescence produced by recombination of a hot electron with a hole. | 01-19-2012 |
20130112999 | LIGHT EMITTING DIODE AND LIGHT EMITTING DIODE LAMP - A light emitting diode is provided by the present invention which includes a pn junction-type light emitting unit having a light emitting layer ( | 05-09-2013 |
20130292707 | Semiconductor Optical Emission Device - A semiconductor optical emission device comprising a layer of material containing a plurality of stress variations and adhering to a surface of a semiconductor is described. In one embodiment the semiconductor is an indirect band gap semiconductor and is silicon in one aspect, the material of the layer comprises silicon and metal oxides and is prepared by a sol-gel process including thermal annealing in one aspect. The layer urges a plurality of randomly distributed elastic deformations in the semiconductor that substantially enhances the radiative recombination interactions among free carriers in the semiconductor. | 11-07-2013 |