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In combination with or also constituting light responsive device

Subclass of:

257 - Active solid-state devices (e.g., transistors, solid-state diodes)

257079000 - INCOHERENT LIGHT EMITTER STRUCTURE

Patent class list (only not empty are listed)

Deeper subclasses:

Class / Patent application numberDescriptionNumber of patent applications / Date published
257081000 With specific housing or contact structure 89
257084000 Combined in integrated structure 83
257083000 Light coupled transistor structure 2
20080315216Terahertz Electromagnetic Wave Radiation Element and Its Manufacturing Method - The present invention improves the efficiency of conversion from a non-radiation two-dimensional electron plasmon wave into a radiation electromagnetic wave, and realizes a wide-band characteristic. A terahertz electromagnetic wave radiation element of the present invention comprises a semiinsulating semiconductor bulk layer, a two-dimensional electron layer formed directly above the semiconductor bulk layer by a semiconductor heterojunction structure, source and drain electrodes electrically connected to two opposed sides of the two-dimensional electron layer, a double gate electrode grating which is provided in the vicinity of and parallel to the upper surface of the two-dimensional electron layer and for which two different dc bias potentials can be alternately set, and a transparent metal mirror provided in contact with the lower surface of the semiconductor bulk layer, formed into a film shape, functioning as a reflecting mirror in the terahertz band, and being transparent in the light wave band. Two light waves are caused to enter from the lower surface of the transparent metal mirror, and two different dc bias potentials are alternately applied to the double gate electrode grating so as to periodically modulate the electron density of the two-dimensional electron layer in accordance with the configuration of the double gate electrode grating.12-25-2008
20110215344LOW POWER GRADED BASE SiGe HBT LIGHT MODULATOR - A graded base silicon-germanium (SiGe) heterojunction bipolar transistor (HBT)-based electro-optical (EO) modulator includes a graded base HBT and a light beam directed under the graded base HBT and passing through the free carrier plasma within for the purpose of inducing a phase modulation of the light beam.09-08-2011
Entries
DocumentTitleDate
20130075761PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF - According to one embodiment, a photoelectric conversion device including a substrate having opaque interconnection layers, an insulating film formed on the substrate, and having a plurality of openings, light-emitting elements formed of the openings, each light-emitting element having an upper electrode layer, and light-receiving elements formed of the openings, each light-receiving element having an upper electrode layer, wherein a semiconductor material is different in the light-emitting element and the light-receiving element, the upper electrode layer both of the light-emitting element and the light-receiving element are formed as common electrodes, and each interconnection layer is formed on a region outside a region specified by the opening.03-28-2013
20100044722Sensing Module - A sensing module comprises a carrier, a sensor, a substrate, and a plurality of chips. The carrier has a carrying surface and a back surface opposite to the carrying surface. The sensor and the substrate are disposed on the carrying surface and are electrically connected to the carrier respectively. The chips are disposed on the substrate and are electrically connected to the substrate respectively. The production cost of the sensing module is low.02-25-2010
20130087811SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes first, second, and third molded bodies. The first molded body covers a first light emitting element, a part of a lead electrically connected to the first light emitting element, a first light receiving element configured to detect a light emitted from the first light emitting element, and a part of a lead electrically connected to the first light receiving element with a first resin. The second molded body covers a second light emitting element, a part of a lead electrically connected to the second light emitting element, a second light receiving element configured to detect a light emitted from the second light emitting element, and a part of a lead electrically connected to the second light receiving element with the first resin. The third molded body molds the first and the second molded bodies as one body using a second resin.04-11-2013
20090045415BACKSIDE-ILLUMINATED IMAGING DEVICE - A backside-illuminated imaging device is provided and includes: a plurality of charge accumulating areas in the semiconductor substrate which accumulate the electric charges; and a plurality of filters above a backside surface of the semiconductor substrate corresponding to the respective charge accumulating areas. The plurality of filters includes different color filters which transmit different color components of the light from one another and luminance filters each having a spectral characteristic correlated with a luminance component of the light, the plurality of charge accumulating areas includes first charge accumulating areas corresponding to the respective color filters, and second charge accumulating areas corresponding to the respective luminance filters, and the second charge accumulating areas includes a third charge accumulating area having a size larger than those of the first accumulating areas.02-19-2009
20130049016DISCONTINUOUS PATTERNED BONDS FOR SEMICONDUCTOR DEVICES AND ASSOCIATED SYSTEMS AND METHODS - Discontinuous bonds for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a first substrate and a second substrate, with at least one of the first substrate and the second substrate having a plurality of solid-state transducers. The second substrate can include a plurality of projections and a plurality of intermediate regions and can be bonded to the first substrate with a discontinuous bond. Individual solid-state transducers can be disposed at least partially within corresponding intermediate regions and the discontinuous bond can include bonding material bonding the individual solid-state transducers to blind ends of corresponding intermediate regions. Associated methods and systems of discontinuous bonds for semiconductor devices are disclosed herein.02-28-2013
20090283777MULTIFACED MICRODEVICE SYSTEM ARRAY - A multisurfaced microdevice system array is produced from a wafer formed of semiconductor substrate material. Sensing, controlling and actuating microdevices are fabricated at specific location on both sides of the wafer, and the wafer is diced. Each die thus created is then formed into a multisurfaced, multifaced structure having outer and inner faces. The multifaced structure and the microdevices form a standardized microdevice system, and cooperatively combined microdevice systems form a microdevice system array. Communication of energy and data to and between microdevices on each and other microdevice systems of the microdevice system array is provided by energy transferring devices including electric conductors for transferring electric energy, ultrasound emitters and receivers for transferring acoustic energy, and electromagnetic energy emitters and receivers for transferring electromagnetic energy.11-19-2009
20090267084Integrated circuit with wireless connection - An integrated circuit includes a device stack including: a memory device with a first wireless coupling element, and a semiconductor device with a second wireless coupling element. The first and second wireless coupling elements are arranged face-to-face and are configured to provide a wireless connection between the memory device and the semiconductor device.10-29-2009
20090289265ELECTRONIC DEVICE AND METHOD OF MANUFACTURING AN ELECTRONIC DEVICE - An electronic device comprising at least one die stack having at least a first die (D11-26-2009
20090184331PHOTODETECTION SEMICONDUCTOR DEVICE, PHOTODETECTOR, AND IMAGE DISPLAY DEVICE - Shields that transmit light to be detected and have conductivity are disposed on light receiving surfaces of photodiodes (07-23-2009
20090206348Composite Substrate, and Method for the Production of a Composite Substrate - A composite substrate (08-20-2009
20120292643LED MODULE AND IMAGE SENSOR MODULE - An LED module includes first through third LED chips and two Zener diodes for preventing excessive voltage application to the first and the second LED chips. A first lead includes a mount portion on which the first through third LED chips and the two Zener diodes are mounted. A resin package covers part of the first lead and includes an opening for exposing the three LED chips and two Zener diodes. A single insulating layer bonds the first and second LED chips to the first lead. A single conductive layer bonds the third LED chip and two Zener diodes to the first lead. The Zener diodes are arranged between the first, second LED chips and the third LED chip.11-22-2012
20090008653LIGHT EMITTING DEVICE - A light emitting device includes an active layer including atoms A of a matrix semiconductor having a tetrahedral structure, a heteroatom D substituted for the atom A in a lattice site, and a heteroatom Z inserted into an interstitial site positioned closest to the heteroatom D, the heteroatom D having a valence electron number differing by +1 or −1 from that of the atom A, and the heteroatom Z having an electron configuration of a closed shell structure through charge compensation with the heteroatom D, and an n-electrode and a p-electrode adapted to supply a current to the active layer.01-08-2009
20090166643LIGHT EMITTING AND IMAGE SENSING DEVICE AND APPARATUS - There is provided a light emitting and image sensing device for a scene. The device is formed in a semiconductor substrate and comprises a photosensor component for sensing an image of the scene. The photosensor component is responsive to incident light from the scene and provides an electrical signal representative of the image. There is also a photoemitter component for emitting a light signal representative of the electrical signal, and a coupling component connecting the photosensor component with the photoemitter component.07-02-2009
20080251794Semiconductor light emitting device - The present invention provides a semiconductor light emitting device realizing lower detection level of spontaneous emission light by a semiconductor photodetector and improvement in light detection precision by selectively reflecting spontaneous emission light. The semiconductor light emitting device includes a semiconductor light emitting element for generating light including stimulated emission light having a wavelength λo and spontaneous emission light having a wavelength band including the wavelength λo, a multilayer filter having a stack structure in which a low-refractive-index layer having a thickness of λ10-16-2008
20080203403SEMICONDUCTOR INTEGRATED CIRCUIT - The semiconductor integrated circuit (08-28-2008
20080258155SEMICONDUCTOR DEVICE, OPTICAL MEASURING AND DETECTING DEVICE, AND METHOD OF MANUFACTURING THE SAME - Disclosed is a semiconductor device which is capable of preventing operation of the signal processing part from being unstable due to light not blocked by the light blocking layer by being obliquely incident on the signal processing part and preventing the operation of the signal processing part from being unstable due to stray charges occurring by light with which the light blocking layer is irradiated. In a light-incident part 10-23-2008
20120138960LIGHT SENSOR AND DISPLAY APPARATUS HAVING THE SAME - In a display apparatus, a light sensor of a display includes a light sensing layer, a source electrode, a drain electrode, an insulating layer, and a gate electrode to sense light from an external source. The light sensing layer is disposed on the substrate to sense light, and the source and drain electrodes are disposed on the light sensing layer and are covered by the insulating layer. The gate electrode is disposed on the insulating layer. An edge of the gate electrode is disposed on the light sensing layer at least in an area where the light sensing layer is overlapped with the source and drain electrodes.06-07-2012
20090140265LIGHT EMITTING DEVICE AND ELECTRONIC APPARATUS - A light emitting device includes a substrate having transparency, a light emitting element that emits light at least to the substrate side, and a light detecting element that is formed between the light emitting element and the substrate. The light detecting element is formed along an outer frame of the light emitting element in a plan view.06-04-2009
20090050905Highly Efficient Light-Emitting Diode - A high extraction efficiency light-emitting diode (LED) capable of producing a light beam of selected cross-section and selected spatial distribution of light in terms of intensity and angle is disclosed. The LED utilizes micro and/or nano optical elements in order to extract more light at one or more specified cone angles.02-26-2009
20090200561Composite phosphors based on coating porous substrates - A composite material is provided including a phosphor material of at least one of among hafnium oxide, niobium oxide, tantalum oxide or zirconium oxide as a conformal coating on a porous substrate, the composite characterized as exhibiting photoluminescence at room temperature. Also provided is a composite material including a phosphor material of at least one of among hafnium oxide, niobium oxide, tantalum oxide, zinc oxide or zirconium oxide as a conformal coating on a porous substrate, the composite characterized as exhibiting photoluminescence at room temperature and as having a broad emission spectrum having a width at ½ maximum greater than 80 nm.08-13-2009
20100258819SUBSTRATE FOR AN LED SUBMOUNT, AND LED SUBMOUNT - A substrate for an LED submount may include a plurality of placement locations on its substrate top side and a plurality of pairs each composed of an electrical anode connection and an electrical cathode connection, wherein the anode connections are arranged on a first side section of the substrate top side and the cathode connections are arranged on a second side section of the substrate top side, having at least one connection dividing conductor track leading from one placement location past at least two other placement locations to an electrical connection, wherein the connection dividing conductor track leads past the at least two other placement locations on the inside.10-14-2010
20120138959LIGHT EMITTING DIODE WITH A STABLE COLOR TEMPERATURE - A light emitting diode (LED) with a stable color temperature includes at least one LED chip and at least one color sensor module. The LED chip has a main light emitting surface and a sub light emitting surface opposite to the main surface. The color sensor module senses the intensities of light emitting from sub light emitting surface of the LED chip for adjustment of a color temperature of the LED.06-07-2012
20100140631DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - Provided are a display device in which variation in output characteristics of the photodiode is suppressed, and a method for manufacturing the display device. The display device is provided with the active matrix substrate (06-10-2010
20100127279DUAL-PHOSPHOR FLAT PANEL RADIATION DETECTOR - A solid state radiation detector capable of improving the sharpness of obtained radiation images. The solid state radiation detector includes: two scintillator layers that convert irradiated radiation to light; and a solid state photodetector, disposed between the two scintillators, that detects the light converted by the two scintillator layers and converts the detected light to electrical signals. Here, the scattering length of each of the scintillators is not greater than 100 μm for the light propagating in the direction parallel to the surface of the scintillator.05-27-2010
20090072248Light emitting display device and method of fabricating the same - A light emitting display device includes a light emitting diode and a thin film transistor on a substrate, the light emitting diode and thin film transistor being electrically coupled to each other, and a photo diode on the substrate, the photo diode including an N-type doping region, a P-type doping region, and an intrinsic region between the N-type doping region and the P-type doping region, the intrinsic region including amorphous silicon.03-19-2009
20090152567Article including semiconductor nanocrystals - An article comprising an array of semiconductor nanocrystals arranged in a predetermined pattern, wherein the semiconductor nanocrystals are capable of generating light of one or more predetermined wavelengths in response to ambient light. In one embodiment the semiconductor nanocrystals emit light of different predetermined wavelengths.06-18-2009
20110108856ORGANIC LIGHT EMITTING DIODE AND ORGANIC SOLAR CELL STACK - This disclosure relates to an organic solar cell and an organic light emitting diode stack. The stack comprises a solar cell portion having a substrate, an electrode, an active layer, and a second electrode. The stack also comprises a light emitting diode portion having a substrate, an electrode, an active layer, and a second electrode. The solar cell portion is laminated to the light emitting diode portion to form a stack. In a variation, the stack comprises a solar cell portion that includes a substrate, an electrode and an active layer. In this variation, there is a connection portion that includes a second substrate, having a second electrode on one side and a third electrode on the other side of the second substrate. Also in this variation, there is also a light emitting diode portion, which includes a third substrate, an electrode on the third substrate and a second active layer. The solar cell portion is laminated to the connection portion and the connection portion is laminated to the light emitting diode portion to form a stack.05-12-2011
20090032823Photo sensor and light emitting display having the same - A photo sensor includes a light incidence unit including a plurality of light incidence layers, the light incidence unit having a varying light transmittance with respect to external light, and a photo sensing unit including a plurality of photo sensing elements, the photo sensing unit being configured to output electrical signals in accordance with an amount of light transmitted through the light incidence unit to determine intensity of the external light, each of the photo sensing elements being configured to output electrical signals in accordance with light transmitted through a respective light incidence layer.02-05-2009
20110101381LED Module with Silicon Platform - An LED module having an LED semiconductor chip mounted directly or indirectly on a platform. The platform is made from silicon and extends laterally beyond the LED semiconductor chip having an active light emitting layer and a substrate. At least one electronic component that is part of the control circuitry for the LED semiconductor chip is integrated in the silicon platform.05-05-2011
20100295063LENS ARRAY AND OPTICAL MODULE HAVING THE SAME - A lens array can have monitor light reliably and can be manufactured easily. With this lens array (11-25-2010
20090250706LIGHT ACTIVATED SILICON CONTROLLED SWITCH - The present invention provides an optically triggered switch and a method of forming the optically triggered switch. The optically triggered switch includes a silicon layer having at least one trench formed therein and at least one silicon diode formed in the silicon layer. The switch also includes a first thyristor formed in the silicon layer. The first thyristor is physically and electrically isolated from the silicon diode by the trench and the first thyristor is configured to turn on in response to electromagnetic radiation generated by the silicon diode.10-08-2009
20080203404OPTICAL SEMICONDUCTOR DEVICE - In an optical semiconductor device that emits or receives light substantially perpendicularly to or in parallel to an active surface formed on a semiconductor substrate, the optical semiconductor device, an electrode that is formed on the active surface side and connected to the active surface is stepped or tapered at an end of the electrode. The electrode of the optical semiconductor device is formed of three layers including an adhesive layer, a diffusion prevention layer, and an Au layer, and the stepped configuration or the taped configuration is formed by a difference of the thickness of the Au layer or the thickness of the adhesive layer/diffusion prevention layer/Au layer.08-28-2008
20110133214LIGHT SENSOR DEVICE AND MANUFACTURING METHOD - A light sensor device comprises a substrate (06-09-2011
20100019252Nanowire-Based Light-Emitting Diodes and Light-Detection Devices With Nanocrystalline Outer Surface - Embodiments of the present invention are directed to nanowire (01-28-2010
20120305946Modular High Density LED Array Light Sources - A modular LED array light source comprises an assembly of a plurality of solid-state LED array modules. Modules are abutted to provide a large area, high intensity, and high-density array that provides substantially uniform irradiance. Preferably, in each module, a linear or rectangular array of groups of LED is provided in which the density of LED die in the array is higher at ends or edges of the modules abutting other modules, to provide improved uniformity of irradiance over the illuminated area between modules. Particular arrangements of clusters of LEDs are provided that reduce or overcome the discontinuity or dip in irradiance due to edge or wall effects caused by the spacing of LED die from edges of the substrate/packaging of each module. These arrangements are advantageous for hermetically sealed LED array modules, for example, which require a minimum wall thickness for an effective seal.12-06-2012
20110042689Semiconductor light-emitting element array device, image exposing device, image forming apparatus, and image display apparatus - A semiconductor light-emitting element array device includes a substrate; a plurality of removable layers being disposed on the substrate; and a thin-film semiconductor light-emitting device being disposed on each of the plurality of removable layers, being made of a different material from a surface material of the substrate, and having a semiconductor light-emitting element; wherein the plurality of removable layers are made of a material which is capable of being etched by a selective chemical etching process. An image exposing device includes an image exposing unit including the semiconductor light-emitting element array device. An image exposing device includes an image exposing unit including the semiconductor light-emitting element array device. An image display apparatus includes an image display unit including the semiconductor light-emitting element array device.02-24-2011
20120168776LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - To prevent a point defect and a line defect in forming a light-emitting device, thereby improving the yield. A light-emitting element and a driver circuit of the light-emitting element, which are provided over different substrates, are electrically connected. That is, a light-emitting element and a driver circuit of the light-emitting element are formed over different substrates first, and then electrically connected. By providing a light-emitting element and a driver circuit of the light-emitting element over different substrates, the step of forming the light-emitting element and the step of forming the driver circuit of the light-emitting element can be performed separately. Therefore, degrees of freedom of each step can be increased, and the process can be flexibly changed. Further, steps (irregularities) on the surface for forming the light-emitting element can be reduced than in the conventional technique.07-05-2012
20100051967Absorbing film - Materials can be prepared in a layer-by-layer fashion on a patterned first substrate and subsequently transferred to a second substrate. The transfer step can preserve the pattern of the first substrate, such that the second substrate will bear a pattern of the transferred material. The material can be an electrostatic multilayer including a light absorbing dye, such as a J-aggregating cyanine dye.03-04-2010
20130187174LIGHT-EMITTING DIES INCORPORATING WAVELENGTH-CONVERSION MATERIALS AND RELATED METHODS - In accordance with certain embodiments, semiconductor dies are embedded within polymeric binder to form, e.g., freestanding white light-emitting dies and/or composite wafers containing multiple light-emitting dies embedded in a single volume of binder.07-25-2013
20130146899CMOS SENSOR WITH IMAGE SENSING UNIT INTEGRATED THEREIN - A complementary metal-oxide semiconductor (CMOS) sensor with an image sensing unit integrated therein is provided. The CMOS sensor includes a first substrate, a CMOS circuit, and a sensing device. The first substrate has the image sensing unit formed thereon. The CMOS circuit is disposed on the first substrate and has a receiving space. The sensing device is disposed in the receiving space. The image sensing unit is located at a position from which the image sensing unit can monitor the sensing device. Accordingly, the image sensing unit monitors the sensing device by sensing its image.06-13-2013
20120286294ORGANIC EL ELEMENT - An organic EL element includes: an organic EL layer including a transparent electrode, a reflective electrode, and a light-emitting layer; a transparent layer disposed on a light-exiting side of the transparent electrode; and a light extraction structure disposed on a light-exiting side of the transparent layer and having a protruding shape with inclined portions. The transparent layer and the light extraction structure have a larger refractive index than the light-emitting layer. The inclined portions of the light extraction structure satisfy Condition 1 or 2 for extracting guided wave light emitted from the light-emitting layer and incident on the light extraction structure from the light extraction structure to the outside of the organic EL element, in a cross section taken along a plane perpendicular to the reflective electrode, where two inclination angles φ11-15-2012
20130200396PREVENTION OF LIGHT LEAKAGE IN BACKSIDE ILLUMINATED IMAGING SENSORS - An apparatus includes a semiconductor layer, a dielectric layer, and a light prevention structure. The semiconductor layer has a front surface and a backside surface. The semiconductor layer includes a light sensing element and a periphery circuit region containing a light emitting element and not containing the light sensing element. The dielectric layer contacts at least a portion of the backside surface of the semiconductor layer. At least a portion of the light prevention structure is disposed between the light sensing element and the light emitting element. The light prevention structure is positioned to prevent light emitted by the light emitting element from reaching the light sensing element.08-08-2013
20130207125ADHESION TYPE AREA SENSOR AND DISPLAY DEVICE HAVING ADHESION TYPE AREA SENSOR - A lightweight, thin, small size semiconductor device is provided. A pixel has a display portion, and a light receiving portion comprising a photodiode. A transistor is used with the semiconductor device for controlling the operation of the display portion and the light receiving portion.08-15-2013

Patent applications in class In combination with or also constituting light responsive device

Patent applications in all subclasses In combination with or also constituting light responsive device