Inventors list

Assignees list

Classification tree browser

Top 100 Inventors

Top 100 Assignees


In array having structure for use as imager or display, or with transparent electrode

Subclass of:

257 - Active solid-state devices (e.g., transistors, solid-state diodes)

257049000 - NON-SINGLE CRYSTAL, OR RECRYSTALLIZED, SEMICONDUCTOR MATERIAL FORMS PART OF ACTIVE JUNCTION (INCLUDING FIELD-INDUCED ACTIVE JUNCTION)

257066000 - Field effect device in non-single crystal, or recrystallized, Semiconductor material

Patent class list (only not empty are listed)

Deeper subclasses:

Entries
DocumentTitleDate
20080265257THIN FILM TRANSISTOR - Embodiments of a thin film transistor (TFT) are disclosed.10-30-2008
20090230401LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A liquid crystal display device includes a gate line placed above a substrate, a gate insulating layer to cover the gate line, a source line placed above the gate insulating layer, an interlayer insulating layer to cover the source line, a comb-shaped or slit-shaped pixel electrode electrically connected a drain electrode of a TFT through a contact hole penetrating the interlayer insulating layer, a first counter electrode placed below and opposite to the pixel electrode with an insulating layer interposed therebetween to generate an oblique electric field with the pixel electrode, and a second counter electrode formed in the same layer as the pixel electrode and placed overlapping the source line in a given area to generate an in-plane electric field with the pixel electrode.09-17-2009
20090206345SEMICONDUCTOR DEVICE - A semiconductor device having a display unit, which is small in size, suppresses the defect caused by the mounting of IC chips and the like on the substrate, and operates at a high speed. A semiconductor display unit and other circuit blocks are integrally formed on the substrate having an insulating surface by using a process for fabricating TFTs that realize a high degree of mobility. Concretely, there is employed a process for crystallizing a semiconductor active layer by using a continuously oscillating laser. Further, the process for crystallization relying upon the continuously oscillating laser is selectively effected for only those circuit blocks that must be operated at high speeds, thereby to realize a high production efficiency.08-20-2009
20090206343DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - In a display apparatus and a method of manufacturing the display apparatus, a first insulating layer having a trench and a second insulating layer having a via hole corresponding to the trench are formed on an array substrate. After forming a seed layer in the trench, a conductive layer is formed on the seed layer through a plating process, thereby forming the gate line, the gate electrode and the storage line accommodated in the trench and the via hole.08-20-2009
20090206342DISPLAY DEVICE - An object is to reduce an occupied area of a protection circuit. Another object is to increase the reliability of a display device including the protection circuit. The protection circuit includes a first wiring over a substrate, an insulating film over the first wiring, and a second wiring over the insulating film.08-20-2009
20100155736THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE HAVING THE THIN FILM TRANSISTOR - A thin film transistor (TFT), a method of fabricating the same, and an organic light emitting diode (OLED) display device including the TFT. The TFT includes a substrate having a pixel region and a non-pixel region, a semiconductor layer, a gate insulating layer, a gate electrode, and source and drain electrodes disposed on the pixel region, at least one gettering site disposed on the non-pixel region, and at least one connection portion to connect the at least one gettering site and the semiconductor layer The method of fabricating the TFT includes patterning a polycrystalline silicon (poly-Si) layer to form a plurality of semiconductor layers, connection portions, and at least one gettering site, the semiconductor layers being connected to the at least one gettering site via the connection portions, and annealing the substrate to getter the plurality of semiconductor layers.06-24-2010
20090294773BOROALUMINO SILICATE GLASSES - Disclosed are alkali-free glasses having a liquidus viscosity of greater than or equal to about 90,000 poises, said glass comprising SiO12-03-2009
20090194771SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object of the present invention is to provide a semiconductor device which has flexibility and resistance to a physical change such as bending and a method for manufacturing the semiconductor device. A semiconductor device of the present invention includes a plurality of transistors provided over a flexible substrate, each of which has a semiconductor film, a gate electrode provided over the semiconductor film with a gate insulating film therebetween, and an interlayer insulating film provided to cover the gate electrode, and a bending portion provided between the plurality of transistors, in which the bending portion is provided by filling an opening formed in the interlayer insulating film with a material having a lower elastic modulus, a material having a lower glass transition point, or a material having a higher plasticity than that of the interlayer insulating film.08-06-2009
20090194770DOUBLE-ACTIVE-LAYER STRUCTURE WITH A POLYSILICON LAYER AND A MICROCRYSTALLINE SILICON LAYER, METHOD FOR MANUFACTURING THE SAME AND ITS APPLICATION - A first amorphous silicon layer is formed over a substrate and a second amorphous silicon layer is formed over the first amorphous silicon layer. When a laser annealing process is performed, the second amorphous silicon layer absorbs more laser light than the first amorphous silicon layer does. The first amorphous silicon layer crystallizes into a microcrystalline silicon layer and the second amorphous silicon layer crystallizes into a polysilicon layer. During the laser annealing process, light interference between the first amorphous silicon layer and an underlying buffer layer is eliminated owing to that the second amorphous silicon layer absorbs more laser light. The laser fringe is eliminated. The microcrystalline silicon layer with better crystalline uniformity can serve as an active layer for TFTs in the display area of an OLED display to improve its illumination uniformity.08-06-2009
20120168765Flexible Substrate and Display Device Including the Flexible Substrate - A flexible substrate for a display device comprises a polymer resin, an inorganic fiber material, and an antistatic agent, and has a surface resistivity of less than 1007-05-2012
20080258149LIQUID CRYSTAL DISPLAY AND PANEL THEREFOR - A thin film transistor array panel according to an embodiment of the present invention includes: a gate line; a data line intersecting the gate line; a thin film transistor connected to the gate line and the data line; a pixel electrode connected to the thin film transistor; and a shielding electrode electrically isolated from the data line, covering the data line at least in part, and having an aperture exposing the data line.10-23-2008
20130037818ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display device includes a thin film transistor including an active layer, a gate electrode, source/drain electrodes, a first insulating layer between the active layer and the gate electrode, and a second insulating layer over the gate electrode; a pixel electrode on the first insulating layer and the second insulating layer and connected to the source or drain electrode; a first wire on the first insulating layer, of the same material as the gate electrode; a second wire on the second insulating layer to at least partially overlap the first wire and including a lower wiring layer of the same material as the pixel electrode and an upper wiring layer on the lower wiring layer, of the same material as the source/drain electrodes; and third insulating layers between the second insulating layer and the pixel electrode and between the second insulating layer and the second wire.02-14-2013
20100117093LASER IRRADIATION DEVICE, PATTERNING METHOD AND METHOD OF FABRICATING ORGANIC LIGHT EMITTING DISPLAY (OLED) USING THE PATTERNING METHOD - In a laser irradiation device, a patterning method and a method of fabricating an Organic Light Emitting Display (OLED) using the same. The laser irradiation device includes a light source, a mask, a projection lens, and a Fresnel lens formed at a predetermined portion of the mask to change an optical path. When an organic layer pattern is formed using the laser irradiation device, laser radiation is irradiated onto a region of an organic layer, which is to be cut, and the laser radiation is appropriately irradiated onto a region of the organic layer, which is to be separated from a donor substrate. The laser radiation irradiated onto an edge of the organic layer pattern has a laser energy density greater than that of the laser radiation irradiated onto other portions of the organic layer pattern. As a result, it is possible to form a uniform organic layer pattern and reduce damage of the organic layer.05-13-2010
20100117092SEMICONDUCTOR DEVICE - In a conventional analog buffer circuit composed of polycrystalline semiconductor TFTs, a variation in the output is large. Thus, a measure such as to provide a correction circuit has been taken. However, there has been such a problem that a circuit and driver operation are complicated. Therefore, a gate length and a gate width of a TFT composing an analog buffer circuit is set to be larger. Also, a multi-gate structure is adopted thereto. In addition, the arrangement of channel regions is devised. Thus, the analog buffer circuit having a small variation is obtained without using a correction circuit, and a semiconductor device having a small variation can be provided.05-13-2010
20090212298Thin Film Transistor Substrate Having Nickel-Silicide Layer - Disclosed are a thin film transistor substrate of an LCD device and a method of manufacturing the same. The thin film transistor substrate includes a nickel-silicide layer formed on an insulating layer pattern including silicon and a metal layer formed on the nickel-silicide layer. Nickel is coated on the insulating layer pattern including silicon and a metal material is coated on the nickel-coated layer. After that, a heat treatment is performed at about 200 to about 350° C. to obtain the nickel-silicide layer. Since the thin film transistor substrate of the LCD device is manufactured by applying the nickel-silicide wiring, a device having low resistivity and good ohmic contact property can be obtained.08-27-2009
20100072483THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME - A thin film transistor array panel according to the present invention includes: a gate line formed on a substrate and including a gate electrode; a gate insulating layer formed on the gate electrode; a mold layer formed on the gate insulating layer and having an opening overlapping the gate electrode; a semiconductor layer filled in the opening; a data line formed on the mold layer and including a source electrode contacted with the semiconductor layer; a drain electrode contacted with the semiconductor layer on the mold layer and facing the source electrode; a passivation layer formed on the data line and the drain electrode; and a pixel electrode formed on the passivation layer and connected to the drain electrode, wherein the passivation layer, the source electrode, and the drain electrode have at least one through-hole connected to the opening.03-25-2010
20100072482ORGANIC LIGHT EMITTING DISPLAY AND METHOD OF MANUFACTURING THE SAME - Disclosed are an organic light emitting display and a method of manufacturing the same. The organic light emitting includes a first substrate, a first electrode, an organic light emitting layer, and a second electrode. The first substrate includes a pixel region showing an image and a peripheral region surrounding the pixel region. The first electrode is formed in the pixel region of the first substrate. The organic light emitting layer is formed on the first electrode. The second electrode is formed on the organic light emitting layer and extends to the peripheral region. An auxiliary electrode is formed on the second electrode to contact the second electrode on an entire surface of the first substrate, thereby applying a voltage having the same voltage level as that of the second electrode.03-25-2010
20100072481Method and Resulting Structure Using Silver for LCOS Devices - A method for fabricating an LCOS device. The method includes providing a semiconductor substrate and forming a plurality of MOS transistor devices formed on a portion of the semiconductor substrate. The method includes forming a first dielectric layer overlying the plurality of transistor devices and forming a first metal layer overlying the first dielectric layer. The method includes forming a second dielectric layer overlying the first metal layer and forming a plurality of pixel regions made substantially of silver bearing material overlying the second dielectric layer. In a preferred embodiment, the silver bearing material has much higher reflectivity for wavelengths of 450 nanometers and greater.03-25-2010
20130075744DISPLAY APPARATUS - Provided is a display apparatus using an organic EL device in which blur in a display image to be a problem for the display apparatus is reduced while propagating light propagating through a high-refractive-index transparent layer is efficiently extracted outside. The display apparatus has a configuration in which a high-refractive-index transparent layer is provided on a light exit side of the organic EL device, a light extraction structure is provided on the high-refractive-index transparent layer so as to surround each of subpixels, a visible light absorbing member is arranged between pixels adjacent to each other, and the visible light absorbing member is not arranged in a region between subpixels adjacent to each other within a pixel.03-28-2013
20100038649MOLD, MANUFACTURING METHOD OF MOLD, METHOD FOR FORMING PATTERNS USING MOLD, AND DISPLAY SUBSTRATE AND DISPLAY DEVICE MANUFACTURED BY USING METHOD FOR FORMING PATTERNS - The present invention relates to a mold, a manufacturing method of the mold, and a method of forming patterns using the mold. The mold may include a main body having a convex portion and a recess portion, and a polymer layer formed over the main body by processing a surface of the main body with a high molecular weight material through a surface treatment.02-18-2010
20130075745THIN-FILM SEMICONDUCTOR DEVICE, DISPLAY APPARATUS, AND METHOD FOR MANUFACTURING THIN-FILM SEMICONDUCTOR DEVICE - A thin-film semiconductor device includes: a first gate line; a metal line; a first gate electrode extending from the first gate line; a second gate electrode on the first gate electrode; an insulating layer provided in a crossing area where the first gate line and the metal line cross; and a second gate line formed in the same layer as the second gate electrode, and on the first gate line in other than the crossing area, wherein the metal line is on the insulating layer, the second gate line and the second gate electrode are thicker than the first gate line and the first gate electrode, and an interface between the metal line and the insulating layer is positioned above a top surface of the second gate electrode, in a cross section in a direction in which the first and second gate lines extend.03-28-2013
20100044717THIN FILM TRANSISTOR PANEL AND METHOD OF MANUFACTURING THE SAME - After forming a signal line including aluminum, an upper layer of an oxide layer including aluminum that covers the signal line is formed in the same chamber and by using the same sputtering target as the signal line, or a buffer layer of an oxide layer including aluminum is formed in a contact hole exposing the signal line during the formation of the contact hole. Accordingly, the contact characteristic between an upper layer including indium tin oxide (“ITO”) or indium zinc oxide (“IZO”) and the signal line may be improved to enhance the adhesion therebetween while not increasing the production cost of the thin film transistor (“TFT”) array panel.02-25-2010
20100044716PIXEL STRUCTURE AND LIQUID CRYSTAL DISPLAY PANEL - A pixel structure is disclosed. The pixel structure is suitable to be disposed on a substrate and includes a first pixel electrode, a second pixel electrode and a top gate TFT. The first pixel electrode and the second pixel electrode are disposed over the substrate, wherein the first pixel electrode and the second pixel electrode are separated from each other. The top gate TFT is disposed between the substrate and the first pixel electrode and includes a patterned semiconductor layer and a gate.02-25-2010
20100044715THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD OF FABRICATING THE SAME - A TFT array substrate including a substrate, a plurality of pixel structures and a plurality of cutting marks is provided. The substrate has a device region and a cutting mark region. The pixel structures are disposed in the device region and each pixel structure includes a TFT, a pixel electrode and a passivation layer covering the TFT. The cutting marks are within the cutting mark region, disposed at two sides of a predetermined cutting position, and are arranged as a row or column perpendicular to a predetermined cutting direction. In particular, the cutting marks are constituted of at least two colors, at least two shapes, at least one color and at least one shape, or a combination thereof.02-25-2010
20100096639ACTIVE MATRIX SUBSTRATE - The active-matrix substrate (04-22-2010
20100096638THIN FILM TRANSISTOR SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND DISPLAY APPARATUS HAVING THE SAME - A thin film transistor substrate that includes a substrate, first and second gate electrodes that are formed on the substrate, a gate insulating layer that is formed on the first and second gate electrodes, a first semiconductor and a second semiconductor that are formed on the gate insulating layer, and that overlap the first gate electrode and the second gate electrode, respectively, a first source electrode and a first drain electrode that are formed on the first semiconductor, and positioned opposed to and spaced from each other, a source electrode connected to the first drain electrode and a second drain electrode positioned opposed to and spaced from the second source electrode, wherein the second source and second drain electrodes are formed on the second semiconductor, and a pixel electrode that is electrically connected to the second drain electrode, a method of manufacturing the same, and a display apparatus having the same.04-22-2010
20090159894SEMICONDUCTOR DEVICE AND DISPLAY DEVICE - To provide a semiconductor device and a display device which include a circuit element capable of improving performances and a circuit element capable of increasing a withstand voltage on the same substrate and which can improve the reliability. The semiconductor device of the present invention includes a first circuit element and a second circuit element on a substrate, the first circuit element having a structure in which a first semiconductor layer, a first insulating film, a first conductive layer, and a third insulating film are stacked in this order, the second circuit element having a structure in which a second semiconductor layer, a second insulating film having a thickness larger than a thickness of the first insulating film, and a second conductive layer are stacked in this order, wherein the first insulating film has a multilayer structure including a silicon nitride layer as the uppermost layer, the second insulating film has a lower part and an upper part, the lower part includes the multilayer structure of the first insulating film, and the upper part includes a structure of the third insulating film formed on the first conductive layer.06-25-2009
20100109013Thin film transistor, method of manufacturing the same, and organic light emitting diode display device including the same - A thin film transistor for an organic light emitting diode includes a substrate including a pixel portion and an interconnection portion, a buffer layer on the substrate, a gate electrode and a gate interconnection on the buffer layer, wherein the gate electrode is located at the pixel portion and the gate interconnection is located at the interconnection portion, a gate insulating layer on the substrate, a semiconductor layer on the gate electrode, source and drain electrodes electrically connected to the semiconductor layer, and a metal pattern on the gate interconnection.05-06-2010
20100109014DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A display device includes: a conductive layer on which gate electrodes are formed; a first insulation layer which is formed on the conductive layer; a semiconductor layer which is formed on the first insulation layer and is provided for forming semiconductor films which contain poly-crystalline silicon above the gate electrodes; and a second insulation layer which is formed on the semiconductor layer. Here, the semiconductor film includes a channel region which overlaps with the gate electrode as viewed in a plan view. In the channel region, a portion of the semiconductor film which is in contact with the second insulation layer exhibits higher impurity concentration than a portion of the semiconductor film which is in contact with the first insulation layer.05-06-2010
20100006855THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE THIN FILM TRANSISTOR - A thin film transistor (TFT), a method of fabricating the same, and an organic light emitting diode (OLED) display device having the TFT. The TFT includes: a substrate; a polycrystalline silicon (poly-Si) semiconductor layer disposed on the substrate, including source, drain, and channel regions, a crystallization-inducing metal, first gettering sites disposed on opposing edges of the semiconductor layer, and a second gettering site spaced apart from the first gettering sites; a gate insulating layer disposed on the semiconductor layer; a gate electrode disposed on the gate insulating layer; an interlayer insulating layer disposed on the gate electrode; and source and drain electrodes disposed on the interlayer insulating layer and electrically connected to the source and drain regions of the semiconductor layer.01-14-2010
20130082272ACTIVE MATRIX SUBSTRATE - Disclosed is an active matrix substrate (04-04-2013
20130082271THIN-FILM SEMICONDUCTOR DEVICE FOR DISPLAY APPARATUS, METHOD FOR MANUFACTURING THIN-FILM SEMICONDUCTOR DEVICE FOR DISPLAY APPARATUS, EL DISPLAY PANEL, AND EL DISPLAY APPARATUS - A thin-film semiconductor device for a display apparatus according to the present disclosure includes: a gate electrode above a substrate; a gate insulating film above the gate electrode; a semiconductor layer on the gate insulating film; a first electrode above the semiconductor layer; a second electrode in a same layer as the first electrode; an interlayer insulating film covering the first electrode and the second electrode; a gate line above the interlayer insulating film; and a power supply line in a same layer as the gate line and adjacent to the gate line. Furthermore, the gate electrode and the gate line are electrically connected via a first conductive portion, and the second electrode and the power supply line are electrically connected via a second conductive portion.04-04-2013
20130082270THIN-FILM TRANSISTOR ARRAY DEVICE, EL DISPLAY PANEL, EL DISPLAY DEVICE, THIN-FILM TRANSISTOR ARRAY DEVICE MANUFACTURING METHOD, EL DISPLAY PANEL MANUFACTURING METHOD - A thin-film transistor array includes first and second bottom-gate transistors, a passivation film, a conductive oxide film below the passivation film, and a relay electrode between a first conductive material in a same layer as a first electrode of the first transistor and a second conductive material in an electroluminescence layer. A first line is in a layer lower than the passivation film and a second line is above the passivation film. A terminal to which an external signal is input is provided in a periphery of the substrate in the same layer as the first electrode. The conductive oxide film covers an upper surface of the terminal and is between the relay electrode and the first conductive material. The relay electrode is formed in a same layer and comprises a same material as the second line.04-04-2013
20100025691SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF - The present invention provides a semiconductor device having a high breakdown voltage and high reliability even if a gate electrode is formed to be thin. The present invention is a semiconductor device including a polycrystal semiconductor layer, a gate insulating film, and a gate electrode, stacked on an insulating substrate in this order, wherein the polycrystal semiconductor layer has a surface roughness of 9 nm or less, the gate insulating film has a multilayer structure including a silicon oxide film on the polycrystal semiconductor layer side and a film containing a material with a dielectric constant higher than a dielectric constant of silicon oxide on the gate electrode side.02-04-2010
20100065849ORGANIC LIGHT EMITTING DISPLAY AND FABRICATION METHOD OF THE SAME - Disclosed is an organic light emitting display. In the organic light emitting display, a substrate is divided into a display region, in which an image is displayed, and a non-display region surrounding the display region. The organic light emitting display includes a plurality of pixels provided on the display region. At least one thin film transistor is formed on the non-display region. The display region includes a first electrode connected to the thin film transistor, an organic light emitting layer formed on the first electrode, and a second electrode formed on the organic light emitting layer to apply voltage to the organic light emitting layer with the first electrode. A light blocking layer having an opening formed below the semiconductor layer is formed on the non-display region.03-18-2010
20130087801LIQUID CRYSTAL DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A break on a video signal line is prevented during patterning on the video signal line. A video signal line, a drain electrode, and a source electrode are simultaneously formed in the same layer. The video signal line includes three layers: a base layer, an AlSi layer, and a cap layer. Conventionally, an alloy having a high etching rate is formed at the boundary between the AlSi layer and the cap layer, causing breakage during patterning on the video signal line. According to the present invention, in the formation of the video signal line, the AlSi layer is formed by sputtering, a TFT is exposed to the atmosphere to form an Al oxide layer on the surface of the AlSi layer, and then the cap layer is formed by sputtering. Thus, the formation of an alloy having a high etching rate on a part of the AlSi layer is prevented, precluding the occurrence of a break on the video signal line.04-11-2013
20130087802THIN FILM TRANSISTOR, FABRICATION METHOD THEREFOR, AND DISPLAY DEVICE - It is an object to increase the mobility of a thin film transistor having an active layer including a microcrystalline semiconductor film. Upon fabricating an inverted staggered type TFT 04-11-2013
20130087800THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - The present invention relates to a thin film transistor array panel and a manufacturing method thereof that prevent disconnection of wiring due to misalignment of a mask, and simplify a process and reduce cost by reducing the number of masks. The thin film transistor array panel according to the disclosure includes a source electrode enclosing an outer part of the first contact hole and formed on the second insulating layer; a drain electrode enclosing an outer part of the second contact hole and formed on the second insulating layer; a first connection electrode connecting the source region of the semiconductor layer and the source electrode through the first contact hole; and a second connection electrode connecting the drain region of the semiconductor layer and the drain electrode through the second contact hole.04-11-2013
20120181544ORGANIC LIGHT-EMITTING DISPLAY DEVICE - An organic light-emitting display device includes a substrate; a thin-film transistor on the substrate; a first insulating layer covering the thin-film transistor; a first electrode on the first insulating layer, and electrically connected to the thin-film transistor; a second insulating layer on the first insulating layer so as to cover the first electrode, and having an opening for exposing a part of the first electrode; a porous member in the second insulating layer; a second electrode on the second insulating layer, and facing the first electrode so as to correspond to the opening; and an organic emission layer between the first electrode and the second electrode so as to correspond to the opening. The organic light-emitting display device may prevent degradation of characteristics of an organic light-emitting device due to discharge of gas from an organic material.07-19-2012
20090045409Display device - A display device including both an n-channel thin film transistor and a p-channel thin film transistor each having excellent electric characteristics and high reliability is demonstrated, and a method for manufacturing thereof is also provided. The display device includes an inverted-staggered p-channel thin film transistor and an inverted-staggered n-channel thin film transistor in which a gate insulating film, a microcrystalline semiconductor film, and an amorphous semiconductor film are sequentially stacked over a gate electrode. The microcrystalline semiconductor film contains oxygen at a concentration of 1×1002-19-2009
20090045407SOLID-STATE IMAGING DEVICE - Realized is a solid-state imaging device capable of achieving both a finer pixel size and high light receiving efficiency with an excellent image characteristic. A high concentration p-well layer (02-19-2009
20130049004THIN-FILM TRANSISTOR ARRAY MANUFACTURING METHOD, THIN-FILM TRANSISTOR ARRAY, AND DISPLAY DEVICE - A method of manufacturing a thin-film transistor array includes: forming a gate insulating layer on gate electrodes; forming an amorphous silicon layer on the gate insulating layer; generating a crystalline silicon layer by crystallizing the amorphous silicon layer; and forming source electrodes and drain electrodes. The thicknesses of the gate insulating layer on the gate electrode is within a range in which there is a positive correlation between light absorbances of the amorphous silicon layer above the gate electrodes for the laser light and equivalent oxide thicknesses of the gate insulating layer on the gate electrodes. The thicknesses of the amorphous silicon layer above the gate electrodes is within a range in which variation of the light absorbances according to variation of the thicknesses of the amorphous silicon layer is within a predetermined range from a first standard.02-28-2013
20130049003ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - An OLED device is disclosed. The OLED device includes: a substrate defined into an active area in which a plurality of pixels are formed in a matrix shape, a GIP (gate-in-panel) area in which drive elements are formed, a ground contact area, and a seal line area; a thin film transistor formed in each pixel region within the active area; an organic light emission diode formed on a protective film and configured to include a first electrode, an organic light emission layer and a second electrode; a bank layer formed to divide the organic light emission diode into pixel units; a signal wiring formed in the ground contact area and the seal line area; and an extended portion formed from the same material as the first electrode of the organic light emission diode and configured to cover the signal wiring.02-28-2013
20130049002THIN FILM TRANSISTOR OF DISPLAY PANEL AND METHOD OF MAKING THE SAME - A thin film transistor (TFT) includes a gate electrode, a gate insulating layer, a first protective pattern, a second protective pattern, a source electrode, a drain electrode, a semiconductor channel layer, and a passivation layer. The first protective pattern and the second protective pattern are disposed on the gate insulating layer above the gate electrode. The source electrode is disposed on the gate insulating layer and the first protective pattern. The drain electrode is disposed on the gate insulating layer and the second protective pattern. The semiconductor channel layer is disposed on the gate insulating layer, the source electrode, and the drain electrode. In an extending direction from the source electrode to the drain electrode, a length of the first protective pattern is shorter than that of the source electrode, and a length of the second protective pattern is shorter than that of the drain electrode.02-28-2013
20100133546System and Method for Manufacturing Thick and Thin Film Devices Using a Donee Layer Cleaved From a Crystalline Donor - Various embodiments of fabricated crystalline-based structures for the electronics, optoelectronics and optics industries are disclosed. Each of these structures is created in part by cleaving a donee layer from a crystalline donor, such as a micaceous/lamellar mass comprising a plurality of lamelliform sheets separable from each other along relatively weak cleavage planes. Once cleaved, one or more of these lamelliform sheets become the donee layer. The donee layer may be used for a variety of purposes, including a crystalline layer for supporting heteroepitaxial growth of one or more semiconductor layers thereon, an insulating layer, a barrier layer, a planarizing layer and a platform for creating useful structures, among others.06-03-2010
20090302325THIN FILM TRANSISTOR SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND DISPLAY APPARATUS HAVING THE SAME - In a thin film transistor substrate, an active pattern of a thin film transistor includes a lower semiconductor pattern and an upper semiconductor pattern that are patterned through different process steps. The lower semiconductor pattern defines a channel area of the thin film transistor, and the upper semiconductor pattern is connected to a side portion of the lower semiconductor pattern and makes contact with the source electrode and the drain electrode. An etch stop layer is formed on the lower semiconductor pattern corresponding to the channel area, and the etch stop layer is formed through the same patterning process as the lower semiconductor pattern. Also, an ohmic contact pattern is formed on the upper semiconductor pattern, and the ohmic contact pattern is formed by the same patterning process as the upper semiconductor pattern.12-10-2009
20090302324Thin film transistor panel - A thin film transistor panel includes an insulating substrate. The insulating substrate includes a number of parallel source lines, a number of parallel gate lines crossed with the source lines, and a number of girds defined by the source lines and the gate lines. Each of the girds includes a pixel electrode and a thin film transistor. The thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The source electrode is connected with one of the source lines defining the grid. The drain electrode is spaced from the source electrode and connected with the pixel electrode. The semiconducting layer is connected with the source electrode and the drain electrode. The semiconducting layer includes a semiconducting carbon nanotube layer. The gate electrode is connected with one of the gate lines defining the grid.12-10-2009
20090302323Method and apparatus for providing a low-level interconnect section in an imager device - Imager pixels with low-level interconnect sections, methods of assembling imager pixels with low-level interconnect sections, and systems containing imager pixels with low-level interconnect sections. Imager pixels are formed such that specific interconnections between transistors and other components of an imager array are removed from one or more upper level metallization sections and placed on a low-level interconnect section closer to the photodetector, such that one upper metallization section is eliminated.12-10-2009
20120217502DISPLAY DEVICE AND MANUFACTURING METHOD OF THE SAME - Provided is a display device which includes: a gate electrode; a first semiconductor layer in a crystallized state which is formed over the gate electrode; a source electrode and a drain electrode which are formed over the first semiconductor layer; and a second semiconductor layer which extends from a side of the first semiconductor layer and is interposed between one of the source electrode and the drain electrode and the first semiconductor layer, wherein the second semiconductor layer includes a first portion which is formed in a crystallized state and brought into contact with the first semiconductor layer, and a second portion which has lower crystallinity than the first portion.08-30-2012
20120112200LIQUID CRYSTAL PANEL AND LIQUID CRYSTAL DISPLAY - A liquid crystal panel, comprising: an array substrate including: a display area, in which pixels disposed, wherein the pixel includes: a switching device; a lower electrode; an insulating layer formed on the lower electrode; an upper electrode, which has a plurality of slits to generate a fringe electric field; and a common signal line; a scanning line; a signal line crossing the scanning line; and a contact hole; and an opposite substrate, wherein one electrode of the upper electrode and the lower electrode is a pixel electrode connected to the switching element, and the other electrode thereof is a common electrode, wherein the signal line is disposed at every two pixels adjacent in a scanning line direction, wherein the contact hole is shared by the adjacent two pixels and is formed at an intervening region of the two adjacent pixels in which the signal line is not provided.05-10-2012
20120112199THIN FILM TRANSISTOR ARRAY PANEL - A thin film transistor array panel according to an exemplary embodiment of the present invention floats all data lines during a manufacturing process by forming the data lines DL separate from each other and separate from the data pad connecting lines DLL, and only connecting the lines DL to the corresponding lines DLL after the data lines DL are etched. This reduces etching speed differences between data wires, thereby reducing the problem of differing thicknesses for different data lines DL. Therefore, it is possible to prevent performance deterioration or display quality deterioration of the transistor due to a thickness difference of data wires.05-10-2012
20130161632ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY APPARATUS - An OLED apparatus including a thin film transistor including an activation layer, a gate electrode insulated from the activation layer and including a lower gate electrode and an upper gate electrode, an interlayer insulation film covering the gate electrode, and a source and drain electrode on the insulation film and contacting the activation layer; an OLED including a pixel electrode electrically connected to the thin film transistor, an intermediate layer including an emissive layer, and an opposite electrode; a blister prevention layer on a same level as the activation layer; a gate insulation layer covering the activation layer and the blister prevention layer and insulating the activation layer from the gate electrode; and an interconnection unit including first and second layers on a portion of the gate insulation layer overlying the blister prevention layer, wherein the blister prevention layer protects the interconnection unit on the gate insulation layer from blistering.06-27-2013
20090267076EL DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - Plurality of pixels (10-29-2009
20090267075OGANIC THIN FILM TRANSISTOR AND PIXEL STRUCTURE AND METHOD FOR MANUFACTURING THE SAME AND DISPLAY PANEL - A method of manufacturing an organic thin film transistor is described. A patterned insulating layer having an opening therein is formed on a substrate. A gate is formed in the opening of the insulating layer, and a gate insulating layer is formed on the gate. A conductive material layer is formed on the gate insulating layer by a printing process. One of the gate insulating layer and the conductive material layer is hydrophobic or hydrophilic and the other is hydrophilic or hydrophobic, such that the conductive material layer is naturally separated to two sides of the gate insulating layer to form a source and a drain. An active layer is formed on the gate insulating layer between the source and the drain.10-29-2009
20090267074ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A organic light emitting display device includes a thin film transistor (TFT) having a gate electrode, a source electrode and a drain electrode which are insulated from the gate electrode, and a semiconductor layer which is insulated from the gate electrode and which contacts each of the source electrode and the drain electrode; and a pixel electrode electrically connected to one of the source electrode and the drain electrode. The gate electrode is made up of a first conductive layer and a second conductive layer on the first conductive layer, and the pixel electrode is formed of the same material as the first conductive layer of the gate electrode on a same layer as the first conductive layer of the gate electrode.10-29-2009
20130009163SEMICONDUCTOR DEVICE, ACTIVE MATRIX SUBSTRATE, AND DISPLAY DEVICE - A semiconductor device that includes a substrate 01-10-2013
20120223315DISPLAY DEVICE AND MANUFACTURING METHOD OF THE SAME - Disclosed is a display device including: a gate electrode; a semiconductor layer formed into an island shape on an upper side of the gate electrode; a side wall oxide film formed on a lateral surface of the semiconductor layer; and a drain electrode and a source electrode formed on an upper side of the semiconductor layer extending from a lateral side of the semiconductor layer, wherein the side wall oxide film has a thickness of 2.1 nm or more.09-06-2012
20110012125THIN FILM TRANSISTOR AND ACTIVE MATRIX DISPLAY - A thin film transistor is formed in a semiconductor island on an insulating substrate. The transistor comprises a source (01-20-2011
20100123138DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a display device includes forming a gate electrode on a substrate, a gate insulating layer on the gate electrode, and an active layer on the gate insulating layer, the gate electrode made of extrinsic polycrystalline silicon, the active layer made of intrinsic polycrystalline silicon; forming an etch stopper on the active layer; forming source and drain electrodes spaced apart from each other on the etch stopper; forming an ohmic contact layer each between a side of the active layer and the source electrode and between an opposing side of the active layer and the drain electrode; forming a gate line connected to the gate electrode; and forming a data line crossing the gate line.05-20-2010
20090101916MICROCRYSTALLINE SEMICONDUCTOR FILM, THIN FILM TRANSISTOR, AND DISPLAY DEVICE INCLUDING THIN FILM TRANSISTOR - A thin film transistor with excellent electric characteristics and a display device having the thin film transistor are proposed. The thin film transistor includes a gate insulating film formed over a gate electrode; a microcrystalline semiconductor film including an impurity element which serves as a donor, formed over the gate insulating film; a buffer layer formed over the microcrystalline semiconductor film; a pair of semiconductor films to which an impurity element imparting one conductivity type is added, formed over the buffer layer; and wirings formed over the pair of semiconductor films. The concentration of the impurity element which serves as a donor in the microcrystalline semiconductor film is decreased from the gate insulating film side toward the buffer layer, and the buffer layer does not include the impurity element which serves as a donor at a higher concentration than the detection limit of SIMS.04-23-2009
20090236607ELECTRONIC CIRCUIT - An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layer is less than 1500 Å, e.g., between 100 and 750 Å. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting of aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.09-24-2009
20090236606Dual Gate Layout for Thin Film Transistor - A dual gate layout of a thin film transistor of liquid crystal display to alleviate dark current leakage is disclosed. The layout comprises (09-24-2009
20090236604THIN FILM TRANSISTOR SUBSTRATES AND METHOD OF MANUFACTURING THE SAME - A thin film transistor substrate includes a color filter layer and a gate line. The color filter layer has a reverse taper shape, which is used to pattern the gate line without a separate mask. Thus, the total number of masks used to manufacture the thin film transistor substrate can be reduced, thereby reducing the manufacturing cost and improving the productivity.09-24-2009
20090236605TFT-LCD PIXEL STRUCTURE AND MANUFACTURING METHOD THEREOF - A thin film transistor liquid crystal display (TFT-LCD) pixel structure comprising: a gate line and a gate electrode formed on a substrate; a first insulating layer, a semiconductor layer, and a doped semiconductor layer formed sequentially on the gate electrode and the gate line, wherein an isolating groove is formed above the gate line which disconnects the semiconductor layer on the gate line; a second insulating layer covering the isolating groove and a portion of the substrate where the gate line and the gate are not formed; a pixel electrode formed on the second insulating layer, wherein the pixel electrode is integral with a drain electrode and is connected with the doped semiconductor layer on the gate electrode at a place where the drain electrode is formed; a source electrode, which is a portion of a data line, formed on the doped semiconductor layer; and a channel formed between the source electrode and the drain electrode.09-24-2009
20130069070MANUFACTURING METHOD FOR DISPLAY DEVICE HAVING A PLURALITY OF THIN FILM TRANSISTORS AND DISPLAY DEVICE FORMED THEREBY - A manufacturing method of a thin film transistor includes: forming semiconductor layers for a plurality of thin film transistors over a substrate; forming an insulating layer covering the semiconductor layers; and forming a metal layer over the insulating layer. The method further includes: patterning the metal layer to form mask patterns; doping first ions using a first mask pattern among the mask patterns into a first semiconductor layer among the semiconductor layers to simultaneously form source region/a drain regions and an active region of the first thin film transistor; and doping second ions using a second mask pattern among the mask patterns into a second semiconductor layer among the semiconductor layers to form a source region and a drain region of the second thin film transistor.03-21-2013
20120235155DISPLAY DEVICE - The present invention is intended to suppress power consumption of an EL display. In accordance with the brightness of an image to be displayed in a pixel portion, the contrast of the image is determined whether to be inverted or not, and the number of bits of the digital video signal to be input into the pixel portion is reduced, and the magnitude of a current to flow through the EL element is allowed to be maintained at a constant level even when a temperature of an EL layer changes by providing the EL display with another EL element to be used for monitoring a temperature.09-20-2012
20120235154Semiconductor Device - To realize a semiconductor device including a capacitor element capable of obtaining a sufficient capacitor without reducing an opening ratio, in which a pixel electrode is flattened in order to control a defect in orientation of liquid crystal. A semiconductor device of the present invention includes a light-shielding film formed on the thin film transistor, a capacitor insulating film formed on the light-shielding film, a conductive layer formed on the capacitor insulating film, and a pixel electrode that is formed so as to be electrically connected to the conductive layer, in which a storage capacitor element comprises the light-shielding film, the capacitor insulating film, and the conductive layer, whereby an area of a region serving as the capacitor element can be increased.09-20-2012
20120235153Semiconductor Device and Method of Manufacturing the Same - In a semiconductor device, gate signal lines are spaced apart from each other above a crystalline semiconductor film. Therefore a first protective circuit is not electrically connected when contact holes are opened in an interlayer insulating film. The static electricity generated during dry etching for opening the contact holes moves from the gate signal line, damages a gate insulating film, passes the crystalline semiconductor film, and again damages the gate insulating film before it reaches the gate signal line. As the static electricity generated during the dry etching damages the first protective circuit, the energy of the static electricity is reduced until it loses the capacity of damaging a driving circuit TFT. The driving circuit TFT is thus prevented from suffering electrostatic discharge damage.09-20-2012
20110278583THIN-FILM SEMICONDUCTOR DEVICE FOR DISPLAY APPARATUS AND MANUFACTURING METHOD THEREOF - A thin-film semiconductor device includes, in order, a substrate, a gate electrode, a gate insulating film, a first channel layer, and a second channel layer. The second channel layer includes a protrusion between first top surface end portions. The protrusion has first lateral surfaces that each extend between one of the first top surface end portions and a top surface of the protrusion. An insulation layer is on the top surface of the protrusion. The insulation layer has second lateral surfaces that each extend to one of second top surface end portions of the insulation layer. Two contact layers are each on one of the second top surface end portions of the insulation layer, adjacent one of the second lateral surfaces of the insulation layer, adjacent one of the first lateral surfaces of the protrusion, and on one of the first top surface end portions of the second channel layer. A source electrode is on one of the two contact layers, and a drain electrode is on the other of the two contact layers. The two contact layers and the upper portion of the protrusion of said second channel layer are of opposite conductivity types.11-17-2011
20110278584Liquid Crystal Display Panel - A laminated spacer portion formed by laminating various thin films that constitute thin-film transistors is disposed in peripheral driver circuits. As a result, even in a structure in which part of a sealing member is disposed above the peripheral driver circuits, pressure exerted from spacers in the sealing member is concentrated on the laminated spacer portion, whereby destruction of a thin-film transistor of the peripheral driver circuits can be prevented caused by the pressure from the sealing portion.11-17-2011
20120286283EL Display device and Method for Manufacturing the Same - Plurality of pixels (11-15-2012
20090134400LTPS-LCD Structure and Method for Manufacturing the Same - An LTPS-LCD structure and a method for manufacturing the structure are provided. The structure comprises a substrate where a plurality of pixels are formed thereon. Each of these pixels comprises a control area, a capacitance area, and a display area. The structure is initially formed with a transparent electrode on the substrate, followed by a control device, a capacitance storage device. The display unit is then formed on the control area, the capacitance area, and the display area, respectively. As a result, the capacitance of the structure can be enhanced and the manufacturing processes of masks can be reduced.05-28-2009
20100012945METHOD OF FORMING PHOTORESIST BURR EDGE AND METHOD OF MANUFACTURING ARRAY SUBSTRATE - A method of forming a photoresist burr edge and a method of manufacturing an array substrate are provided in the present invention. The method of manufacturing an array substrate comprises: forming a gate line and a gate electrode on a substrate; forming a data line, a source electrode, a drain electrode and a TFT channel region without removing the photoresist on the data line, the source electrode and the drain electrode; depositing a passivation layer; removing the remained photoresist and the passivation layer thereon by a lifting-off process; applying a photoresist layer; forming a photoresist burr edge of peak shape; depositing a transparent conductive film; forming a pixel electrode by a lifting-off process, wherein the pixel electrode is directly connected with the drain electrode.01-21-2010
20090146152Thin film transistor array panel and method for manufacturing the same - A thin film transistor array panel and a method of its manufacture are presented. The thin film transistor array panel according to an embodiment includes a substrate, a gate line extending in a first direction on the substrate, a data line extending in a second direction on the substrate and intersecting and insulated from the gate line, a thin film transistor including a control terminal connected to the gate line, an input terminal connected to the data line and an output terminal, a color filter formed on the thin film transistor, a light blocking member formed on the thin film transistor, defining the space for storing the color filter, and including a first protection portion surrounding at least the region of the output terminal of the thin film transistor, and a pixel electrode formed on the light blocking member and the color filter and contacting the region of the output terminal surrounded by the first protection portion of the light blocking member.06-11-2009
20110140120Semiconductor Device - It is an object of the present invention to connect a wiring, an electrode, or the like formed with two incompatible films (an ITO film and an aluminum film) without increasing the cross-sectional area of the wiring and to achieve lower power consumption even when the screen size becomes larger. The present invention provides a two-layer structure including an upper layer and a lower layer having a larger width than the upper layer. A first conductive layer is formed with Ti or Mo, and a second conductive layer is formed with aluminum (pure aluminum) having low electric resistance over the first conductive layer. A part of the lower layer projected from the end section of the upper layer is bonded with ITO.06-16-2011
20110284861LOW-TEMPERATURE POLYSILICON THIN FILM AND METHOD OF MANUFACTURING THE SAME, TRANSISTOR, AND DISPLAY APPARATUS - A method for manufacturing a low-temperature polysilicon thin film comprises the steps of providing a substrate and forming a buffer layer on the substrate; forming a first amorphous silicon thin film on the buffer layer; forming catalyst particles on the first amorphous silicon thin film; forming a second amorphous silicon thin film to cover the first amorphous silicon thin film and the catalyst particles; and performing a crystallization of the first and second amorphous silicon thin films by using the catalyst particles so as to form the low-temperature polysilicon thin film.11-24-2011
20100006854SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - In a semiconductor device, typically an active matrix display device, the structure of TFTs arranged in the respective circuits are made suitable in accordance with the function of the circuit, and along with improving the operating characteristics and the reliability of the semiconductor device, the manufacturing cost is reduced and the yield is increased by reducing the number of process steps. A semiconductor device has a semiconductor layer, an insulating film formed contacting the semiconductor layer, and a gate electrode having a tapered portion on the insulating film, in the semiconductor device, the semiconductor layer has a channel forming region, a first impurity region for forming a source region or a drain region and containing a single conductivity type impurity element, and a second impurity region for forming an LDD region contacting the channel forming region, a portion of the second impurity region is formed overlapping a gate electrode, and the concentration of the single conductivity type impurity element contained in the second impurity region becomes larger with distance from the channel forming region.01-14-2010
20100006851Thin film transistor and method of manufacturing the same - A thin film transistor comprises a substrate; a semiconductor layer disposed on the substrate, the semiconductor layer having a source region, a drain region, and a channel region between the source region and the drain region; a gate insulating layer disposed on the semiconductor layer and on the substrate; a gate electrode disposed on the insulating layer over the channel region; an passivation layer disposed on the gate electrode and the gate insulating layer; a source electrode disposed in contact with upper, lower and side surfaces of the source region via a first contact hole through passivation layer, the gate insulating layer and the semiconductor layer; and a drain electrode disposed in contact with upper, lower and side surfaces of the drain region via a second contact hole through the passivation layer, the gate insulating layer and the semiconductor layer.01-14-2010
20120104404HIGH LIGHT TRANSMITTANCE IN-PLANE SWITCHING LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - The present disclosure relates to a high light transmittance in-plan switching liquid crystal display device and a method for manufacturing the same. The liquid crystal display device includes: a substrate; a gate line disposed in horizontal direction on the substrate; a gate insulating layer covering the gate line; a data line disposed in vertical direction on the gate insulating layer; an additional insulating layer on the data line having same size and shape with the data line; a passivation layer covering the additional insulating layer; and a common electrode overlapping with the data line on the passivation layer. According to the present disclosure, the failure due to the parasitic capacitance and the load for driving the display panel are reduced and it is possible to make large and high definition display panel.05-03-2012
20110297952THIN FILM TRANSISTOR AND DISPLAY DEVICE USING THE SAME AND METHOD FOR MANUFACTURING THE SAME - A thin film transistor according to an example embodiment includes: a substrate body; a semiconductor layer formed on the substrate body and comprising a polycrystalline silicon film having a surface resistance from about 2000 ohm/sq to about 8000 ohm/sq; and a source electrode and a drain electrode each contacted with the semiconductor layer and comprising a metallic material having a resistance from about 350 to about 2000 ohm.12-08-2011
20120153292LIQUID CRYSTAL DISPLAY DEVICE - In a liquid crystal display device that uses a top gate TFT, a contact hole is formed to connect to an image signal line. An inorganic passivation film and an organic passivation film are formed in this order so as to cover the TFT, on which a common electrode is formed. Then, an interlayer insulating film is formed on the common electrode. A through hole for gas release is formed in the interlayer insulating film. The diameter of the through hole is greater than the diameter of the contact hole, so as to be able to easily release gas from the organic passivation film, and to prevent the interlayer insulating film from peeling off.06-21-2012
20120012854ACTIVE MATRIX SUBSTRATE, DISPLAY PANEL, DISPLAY DEVICE, AND LASER IRRADIATION METHOD - In an active matrix substrate (01-19-2012
20110291102THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME, AND LIQUID CRYSTAL DISPLAY - A thin film transistor array panel includes a substrate, a first thin film transistor formed on the substrate, a color filter formed on the first thin film transistor and having a through hole, a capping layer formed on the color filter and having an opening, and a pixel electrode formed on the capping layer and connected to the first thin film transistor through the through hole. The opening exposes the color filter outside the through hole.12-01-2011
20110291101Display and manufacturing method of the same - A display, including a substrate, a plurality of signal wires, a first gate electrode, a second gate electrode, a gate insulating layer, a first semiconductor layer including a first source/drain region doped with a p-type impurity, a second semiconductor layer including a second source/drain region doped with an n-type impurity, a planarization layer having a first contact hole exposing a portion of the first source/drain region, a second contact hole exposing a portion of the second source/drain region, and a third contact hole exposing a portion of any one of the signal wires, a first connection electrode, a second connection electrode, a lower electrode, an organic film layer, and an upper electrode.12-01-2011
20100059758PIXEL STRUCTURE OF A DISPLAY PANEL - A tri-gate pixel structure includes three sub-pixel regions, three gate lines, a data line, three thin film transistors (TFTs), three pixel electrodes, and a common line. The gate lines are disposed along a first direction, and the data line is disposed along a second direction. The TFTs are disposed in the sub-pixel regions respectively, wherein each TFT has a gate electrode electrically connected to a corresponding gate line, a source electrode electrically connected to the data line, and a drain electrode. The three pixel electrodes are disposed in the three sub-pixel regions respectively, and each pixel electrode is electrically connected to the drain electrode of one TFT respectively. The common line crosses the gate lines and partially overlaps the three gate lines, and the common line and the three pixel electrodes are partially overlapped to respectively form three storage capacitors.03-11-2010
20090283775SEMICONDUCTOR DEVICE - Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented.11-19-2009
20090283774ORGANIC LIGHT EMITTING DISPLAY AND METHOD FOR MAKING THE SAME - An organic light emitting display and a method for making the same includes protection circuitry to avoid damage from static electricity. The display and method allow performing a lighting test during display manufacturing. The organic light emitting display includes a substrate, a display region on the transparent substrate with a matrix of pixels, and a signal transfer unit on the transparent substrate for transferring lighting test signals to the pixels. The signal transfer unit includes transistors for transferring the lighting test signals and a resistor coupled to drains and gates of the transistors for protecting the transistors against damage from static electricity.11-19-2009
20090289260LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF MANUFACTURING THAT - A liquid crystal display device which can reduce or eliminate a display defect is provided. The liquid crystal display device includes a first alignment film formed on one of the pair of substrates; a second alignment film formed on another of the pair of substrates; first projecting portions which are provided to the first alignment film and project into the liquid crystal layer by first constitutional members which constitute a layer below the first alignment film; and second projecting portions which are provided to the second alignment film, face the first projecting portions, and project into the liquid crystal layer by second constitutional members which constitute a layer below the second alignment film, the first projecting portion being set lower than the second projecting portion, and an area of an upper surface of the first projecting portion being set smaller than an area of an upper surface of the second projecting portion. The first alignment film is made of a photo-decomposition-type alignment film material.11-26-2009
20090278132ARRAY SUBSTRATE OF LIQUID CRYSTAL DISPLAY DEVICE HAVING THIN FILM TRANSISTOR ON COLOR FILTER AND METHOD OF FABRICATING THE SAME - An array substrate of a liquid crystal display device having a color filter on a gate metal layer, and a data metal layer formed on the color filter. First a gate insulating layer is formed on the gate metal layer to protect and a second gate insulating layer is formed on the color filter layer. Gate lines and gate electrodes are formed in direct contact with the substrate, and color filters are formed on the gate electrodes. To protect gate lines in the patterning process of color filters, a first gate insulating layer is formed on the gate lines and electrodes. Therefore, a high aperture ratio may be enhanced, and the manufacturing yield may be increased.11-12-2009
20090050896Display device - The present invention provides a display device which forms a drive circuit using a bottom-gate-type TFT made of poly-Si which generates a small leak current in a periphery of a display region. A gate electrode is made of Mo having a high melting point, and a gate insulation film is formed on the gate electrode. A channel layer constituted of a poly-Si layer is formed on the gate insulation film, and the poly-Si layer is covered with an a-Si layer. An n+ Si layer is formed on the a-Si layer, and an SD electrode is formed on the n+ Si layer. Although holes are induced in the poly-Si layer when a negative voltage (inverse bias) is applied to the gate electrode, the holes cannot pass through the a-Si layer and hence, no drain current flows. Accordingly, it is possible to realize a bottom-gate-type TFT using poly-silicon which generates a small leak current.02-26-2009
20120097967Organic light-emitting display device and method of manufacturing the same - An organic light-emitting display device includes a buffer layer on a substrate that has a plurality of insulating layers having different refractive indexes, and at least one of the insulating layers have different thicknesses on the same level. The device further includes an active layer of a thin film transistor in a thick area of the buffer layer, a pixel electrode in a thin area of the buffer layer, a gate electrode of the thin film transistor on the active layer and source and drain electrodes of the thin film transistor connected to the active layer, and a gate insulating layer between the gate electrode and the source and drain electrodes. The device also includes an emission layer on the pixel electrode, an opposite electrode facing the pixel electrode, and the emission layer is between the opposite electrode and the pixel electrode.04-26-2012
20120097966Thin Film Transistor, Organic Light Emitting Diode (OLED) Display Including the Same, and Manufacturing Methods of Them - The present invention relates generally to a thin film transistor, an organic light emitting diode (OLED) display including the same, and manufacturing methods of them. The thin film transistor comprises: a substrate; a gate electrode disposed on the substrate; a gate insulating layer disposed on the gate electrode; a semiconductor layer disposed on the gate insulating layer; an inter layer dielectric disposed on the entire surface of the substrate; and source and drain electrodes disposed on the inter layer dielectric and connected to the semiconductor layer, and in which the gate electrode is disposed so as to correspond to the entire surface of the semiconductor layer, and a manufacturing method thereof. The organic light emitting diode (OLED) display comprises the elements of the thin film transistor described above, and also includes an insulating film disposed on the entire surface of the substrate, and a first electrode, an organic layer, and a second electrode disposed on the insulating film, the first electrode being electrically connected to any one of the source and drain electrodes, and the gate electrode is disposed so as to correspond to the entire surface of the semiconductor layer.04-26-2012
20120097965THIN FILM TRANSISTOR AND DISPLAY DEVICE USING THE SAME - In a thin film transistor and a display device provided with the same, a thin film transistor according to an exemplary embodiment includes: a semiconductor layer including a channel region, a source region, a drain region, a light-doped source region, and a light-doped drain region; a gate electrode overlapping the channel region; a source electrode contacting the source region; and a drain electrode contacting the drain region. The channel region includes a main channel portion, a source channel portion, and a drain channel portion, and the source channel portion and the drain channel portion are extended from the main channel portion and separated from each other. The light-doped source region is disposed between the source channel portion and the source region and the light-doped drain region is disposed between the drain channel portion and the drain region.04-26-2012
20100032680DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - Provided is a display device including: a gate electrode (GT); a semiconductor film (S) which controls a current flowing between a source electrode (ST) and a drain electrode (DT), the semiconductor film including a channel region and two impurity regions formed of regions which sandwich the channel region; two Ohmic contact layers (DS) being interposed between the source electrode and the like and the two impurity regions; and an insulating film laminated on a partial region of the semiconductor film, the partial region being around a position corresponding to a substantial center of the semiconductor film, in which: the semiconductor film is formed of one of microcrystalline-silicon and polycrystalline-silicon; the two impurity regions are formed in regions on which the insulating film is absent; the two Ohmic contact layers cover the two impurity regions therewith; and the source electrode and the like cover the Ohmic contact layers therewith.02-11-2010
20100032681DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A display device includes: a transparent substrate; gate electrodes which are stacked on the transparent substrate; semiconductor films which are stacked above the gate electrodes and constitute thin film transistors together with the gate electrodes; source electrodes and drain electrodes which are formed above the semiconductor films; an insulation film which is stacked between the source electrodes and the semiconductor films and between the drain electrodes and the semiconductor films; and contact holes which are formed in the insulation film so as to connect the source electrodes and the drain electrodes with the semiconductor films. The semiconductor film includes a connection region which is positioned at least below the contact hole and is connected with the source electrode, and a connection region which is positioned at least below the contact hole and is connected with the drain electrode, and impurities are implanted into the connection regions.02-11-2010
20100032678Light emitting display device and method for fabricating the same - A light emitting display device includes a first electrode formed at a light emitting region of a first substrate; a transparent oxide thin film of about 1 Å to about 200 Å in thickness formed on an entire surface of the first electrode at the light emitting region to substantially cover particle on the entire surface of the first electrode; an organic light emitting layer formed on an entire surface of the oxide thin film to emit a light; and a second electrode formed on an entire surface of the first substrate including the organic light emitting layer.02-11-2010
20090230402DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - A display apparatus including a first substrate including a pixel area; a gate line disposed on the first substrate; a data line disposed on the first substrate and insulated from the gate line; an insulating layer pattern interposed between the gate line and the data line in an area where the gate line and the data line overlap; a gate insulating layer interposed between the gate line and the data line; a pixel electrode disposed in the pixel area; and a second substrate facing the first substrate.09-17-2009
20120025198THIN FILM TRANSISTOR ARRAY SUBSTRATE - A thin film transistor array substrate includes a substrate having a plurality of pixel units arranged in a matrix, a plurality of first gate lines and second gate lines alternately arranged on the substrate, a plurality of source lines perpendicular to the first gate lines and the second gate lines formed on the substrate, and a plurality of thin film transistors respectively positioned in the pixel units. Each of the source lines further includes a main source line and a sub source line electrically connected to each other in parallel connection.02-02-2012
20120025197THIN FILM TRANSISTOR SUBSTRATE OF LIQUID CRYSTAL DISPLAY PANEL - A thin film transistor substrate of a liquid crystal display panel and manufacturing method thereof are disclosed. The thin film transistor substrate of the liquid crystal display panel includes a substrate, a storage capacitor electrode, a first insulated layer, a gate electrode, a gate insulated layer, a patterned semiconductor layer, a source electrode, a drain electrode, a second insulated layer, and at least one pixel electrode. A part of the storage capacitor electrode overlaps a part of the pixel electrode to form a storage capacitor and the storage capacitor electrode includes a patterned transparent conducting layer and a patterned opaque conducting layer. Moreover, the patterned transparent conducting layer and the patterned opaque conducting layer are defined by a gray-tone mask, and an area of the patterned transparent conducting layer is larger than an area of the patterned opaque conducting layer to improve the aperture ratio.02-02-2012
20090078941BACKPLANE STRUCTURES FOR SOLUTION PROCESSED ELECTRONIC DEVICES - There is provided a backplane for an organic electronic device. The backplane has a TFT substrate; a multiplicity of electrode structures; and a bank structure defining a multiplicity of pixel openings on the electrode structures. The bank structure has a height adjacent to the pixel opening, h03-26-2009
20090189163THIN FILM TRANSISTOR ARRAY SUBSTRATE - A TFT array substrate includes a substrate, a patterned first metallic layer, a patterned stack layer, a patterned dielectric layer, a patterned transparent conductive layer, and a patterned third metallic layer. Elements of each TFT in the TFT array substrate are arranged vertically, so that the TFT array substrate has relatively small fabrication area and is operable with a high conducting current. Further, the storage capacitance can be enhanced by enclosing or sandwiching the second metallic layer with the common lines and the transparent electrodes. In such a way, pixel flashing caused by those coupled signals can be reduced, thus promoting displaying quality thereof.07-30-2009
20090189162ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - An organic light emitting diode display device to display a main image and a sub-image, such as background, illumination, or the like, without additional processes or a reduction in the resolution of the image, and a method of fabricating the same, the organic light emitting diode display device including: a substrate; a thin film transistor disposed on the substrate, including a semiconductor layer, a source electrode, a drain electrode, a gate insulating layer, and a gate electrode; an insulating layer disposed on the thin film transistor; a first lower electrode disposed on the insulating layer, electrically connected to the source electrode and the drain electrode of the thin film transistor; an auxiliary lower electrode disposed on the insulating layer, spaced apart from the first lower electrode; a first organic layer disposed on the first lower electrode, including at least one emission layer; a second organic layer disposed on the auxiliary lower electrode, including at least one emission layer; and an upper electrode disposed on the first organic layer and the second organic layer.07-30-2009
20090050895SEMICONDUCTOR MANUFACTURING METHOD, SEMICONDUCTOR MANUFACTURING APPARATUS, AND DISPLAY UNIT - In a semiconductor manufacturing method that manufactures a coplanar type thin film transistor, a microcrystalline film 02-26-2009
20090121234Liquid crystal display device and fabrication method thereof - A liquid crystal display device including a gate electrode and a gate line formed on a first substrate, a first insulating layer formed on the first substrate, an active pattern, an ohmic-contact layer, and a diffusion preventing layer formed on the gate electrode, a data line to cross source and drain electrodes and the gate line formed on the diffusion preventing layer to define a pixel area, a second insulating layer formed on the first substrate, a contact hole formed by removing a portion of the second insulating layer and exposing a portion of the drain electrode, a pixel electrode electrically connected with the drain electrode via the contact hole, and a second substrate attached with the first substrate in a facing manner, wherein the diffusion preventing layer comprises a metal tip protruded to the side of the source and drain electrodes.05-14-2009
20090065783ELECTRO-OPTICAL DEVICE AND ELECTRONIC APPARATUS - An electro-optical device includes a semiconductor layer, a first insulating film, a second insulating film, and a gate electrode. The first insulating film is formed in an island shape so as to cover a first junction region of the semiconductor layer. The second insulating film is formed in an island shape so as to cover a second junction region of the semiconductor layer. The gate electrode faces the channel region through a gate insulating film and extends onto the first and second insulating films.03-12-2009
20080308811Display device - The present invention provides a display device having thin film transistors which can reduce an OFF current in spite of the extremely simple constitution. In the display device having thin film transistors on a substrate, each thin film transistor includes a gate electrode which is connected with a gate signal line, a semiconductor layer which is formed astride the gate electrode by way of an insulation film, a drain electrode which is connected with a drain signal line and is formed on the semiconductor layer, and a source electrode which is formed on the semiconductor layer in a state that the source electrode faces the drain electrode in an opposed manner, and a side of the drain electrode which faces the source electrode does not overlap the gate electrode as viewed in a plan view, and a side of the source electrode which faces the drain electrode does not overlap the gate electrode as viewed in a plan view.12-18-2008
20100264422Thin film semiconductor device, display device using such thin film semiconductor device and manufacturing method thereof - A thin film semiconductor device formed as integrated circuits on an insulating substrate with bottom gate type thin film transistors stacked with gate electrodes, a gate insulating film and a semiconductor thin film in the order from below upward. The gate electrodes comprise metallic materials with thickness less than 100 nm. The gate insulating film has a thickness thicker than the gate electrodes. The semiconductor thin film comprises polycrystalline silicon crystallized by a laser beam. By reducing thickness of metallic gate electrodes, thermal capacity becomes small and difference in thermal condition on the metallic gate electrodes and on the insulating substrate made of glass or the like becomes small. This invention relates to the task of uniforming and optimizing recrystallization by a laser anneal treatment provided for the semiconductor thin film which works as an active layer of the bottom gate type thin film transistors.10-21-2010
20100117090ARRAY SUBSTRATE INCLUDING THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME - A method of fabricating an array substrate includes: forming a gate line and a gate electrode connected to the gate line; forming a gate insulating layer on the gate line and the gate insulting layer; sequentially forming an intrinsic amorphous silicon pattern and an impurity-doped amorphous silicon pattern on the gate insulating layer over the gate electrode; forming a data line on the gate insulating layer and source and drain electrodes on the impurity-doped amorphous silicon pattern, the data line crossing the gate line to define a pixel region, and the source and drain electrodes spaced apart from each other; removing a portion of the impurity-doped amorphous silicon pattern exposed through the source and drain electrodes to define an ohmic contact layer; irradiating a first laser beam onto the intrinsic amorphous silicon pattern through the source and drain electrode to form an active layer including a first portion of polycrystalline silicon and a second portion of amorphous silicon at both sides of the first portion; forming a passivation layer on the data line, the source electrode and the drain electrode, the passivation layer having a drain contact hole exposing the drain electrode; and forming a pixel electrode on the passivation layer in the pixel region, the pixel electrode connected to the drain electrode through the drain contact hole.05-13-2010
20100084661DISPLAY SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND DISPLAY APPARATUS HAVING THE SAME - The present invention relates to a display substrate in which sound devices serving as speakers or a microphones are built, and the display substrate includes a substrate including a sound processing area and a display area, a plurality of sound devices arranged in the sound processing area, and a plurality of pixels arranged in the display area. The sound devices may be formed on the substrate together with the pixels using a same manufacturing process as that used to form the pixels.04-08-2010
20100117091DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A display device having thin film transistors which can acquire an appropriate ON current and an appropriate OFF current and a manufacturing method thereof are provided. A display device includes: a transparent substrate; and a plurality of thin film transistors which are formed on the transparent substrate. Each thin film transistor includes a gate electrode which is stacked on the transparent substrate, a source electrode and a drain electrode which are stacked over the gate electrode, a first semiconductor film which is stacked between the gate electrode, and the source electrode and the drain electrode so as to control an electric current which flows between the source electrode and the drain electrode, an insulation film which is stacked on the first semiconductor film in a contacting manner in a state where a source-electrode-side edge portion and a drain-electrode-side edge portion of the first semiconductor film are exposed, and a second semiconductor film and a third semiconductor film which are stacked between the source-electrode-side edge portion and the source electrode T as well as between the drain-electrode-side edge portion and the drain electrode. The third semiconductor film is connected with the source electrode and the drain electrode by an ohmic contact. The second semiconductor film is formed below the third semiconductor film with resistance higher than resistance of the third semiconductor film.05-13-2010
20090267077SEMICONDUCTOR ELEMENT, ORGANIC TRANSISTOR, LIGHT-EMITTING DEVICE, AND ELECTRONIC DEVICE - It is an object of the present invention to provide an organic transistor having a low drive voltage. It is also another object of the present invention to provide an organic transistor, in which light emission can be obtained, which can be manufactured simply and easily. According to an organic light-emitting transistor, a composite layer containing an organic compound having a hole-transporting property and a metal oxide is used as part of the electrode that injects holes among source and drain electrodes, and a composite layer containing an organic compound having an electron-transporting property and an alkaline metal or an alkaline earth metal is used as part of the electrode that injects electrons, where either composite layer has a structure of being in contact with an organic semiconductor layer.10-29-2009
20090166641Thin film transistor, method of fabricating a thin film transistor and flat panel display device having the same - A thin film transistor (TFT) includes a substrate, a transparent semiconductor layer on the substrate, the transparent semiconductor layer including zinc oxide and exhibiting a charge concentration of about 1×1007-02-2009
20110062447LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR MANUFACTURING LIQUID CRYSTAL DISPLAY DEVICE - A reflection-type or transflective-type liquid crystal display device having excellent efficiency of light utility is provided at low cost.03-17-2011
20100006856PROCESS FOR MANUFACTURING A THIN-FILM TRANSISTOR (TFT) DEVICE AND TFT DEVICE MANUFACTURED BY THE PROCESS - A process for manufacturing a thin-film transistor device includes forming a dielectric insulation layer on a substrate, forming an amorphous silicon layer on the dielectric insulation layer, crystallizing the amorphous silicon layer, so as to obtain polycrystalline silicon, forming gate structures on the polycrystalline silicon, and forming first doped regions within the polycrystalline silicon laterally with respect to the gate structures. The crystallizing step includes forming first capping dielectric regions on the amorphous silicon layer, and then irradiating the amorphous silicon layer using a laser so as to form active areas of polycrystalline silicon separated by separation portions of amorphous silicon underlying the first capping dielectric regions.01-14-2010
20090206346TFT LCD ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF - The present invention discloses a method for manufacturing a TFT LCD array substrate by utilizing the gray tone mask technology and the photoresist lifting-off technology with only two masks in two photolithography processes, and to a TFT LCD array substrate manufactured by the same. In the resultant array substrate, the gate line and the data line are perpendicular to and intersect with each other to define the pixel area, and one of the gate line and the data line is continuous and the other is discontinuous. The array substrate is covered with a passivation protection film. The disconnected gate line or the data line is connected together through the via holes formed in the passivation protection film and the connecting conductive film formed on the passivation protection film. The data line and the source electrode and drain electrode of the TFT are made of the same conductive film, and the connecting conductive film and the pixel electrode are made of the same conductive film in the same photolithography process.08-20-2009
20090206344System for displaying images - A system for displaying images is disclosed. The system includes a self-emitting display device including an array substrate having a pixel region. A light-emitting diode is disposed on the array substrate of the pixel region. First and second driving thin film transistors are electrically connected to a light-emitting diode. The first driving thin film transistor includes a first gate and an active layer stacked on the array substrate of the pixel region and the second driving thin film transistor includes the active layer and a second gate thereon. The first gate is coupled to a first voltage and the second gate is coupled to a second voltage different from the first voltage during the same frame.08-20-2009
20090014726ACTIVE DEVICE ARRAY SUBSTRATE - An active device array substrate including a substrate, a pixel array, pads, first switching devices, and second switching devices is provided. The pixel array is disposed on a display region of the substrate. The pads, the first and the second switching devices are disposed on a peripheral circuit region of the substrate. The pads and the pixel array are electrically connected. The first and the second switching devices are at the outside of the pads. Each first switching device is electrically connected to one of the pads and has a source, a drain, and a gate electrically connected to the source and the pad. Each second switching device is electrically connected to two adjacent first switching devices and has a gate, a source, and a drain. The source and the drain are electrically connected to the drain and the source of the adjacent first switching device, respectively.01-15-2009
20110198608SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND DISPLAY DEVICE - A semiconductor device includes a thin film transistor and a thin film diode on a same substrate. A semiconductor layer (08-18-2011
20090101914Semiconductor Image Sensing Device - A signal charge corresponding to an incident light quantity is accumulated in a first node of each pixel circuit. An accumulated charge exhaust circuit includes each of first nodes of the plurality of pixel circuits belonging to the same pixel group, and a second node connected through discharge gates functioning as variable resistance elements. Second node functions as a floating drain during an ON period of a control switch, while accumulating the signal charge overflowing from each pixel circuit, in a capacitor during an OFF period of control switch provided at an intermediate timing in one frame period. When the incident light to the pixel group is intense, a resistance value of each discharge gate is lowered in response to an increase of the signal charge accumulated in capacitor, so that the signal charge accumulated in each pixel circuit can be exhausted once at the above intermediate timing.04-23-2009
20090278135THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND DISPLAY DEVICE USING THE SAME - Disclosed herein is a thin film transistor, including: a gate electrode; a crystallized semiconductor layer formed through a gate insulating film on the gate electrode; and a drain electrode and a source electrode provided on both end sides of the crystallized semiconductor layer, respectively, and provided through impurity doped layers each contacting the crystallized semiconductor layer, respectively.11-12-2009
20090278133THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME, AND LIQUID CRYSTAL DISPLAY - A thin film transistor array panel includes a substrate, a first thin film transistor formed on the substrate, a color filter formed on the first thin film transistor and having a through hole, a capping layer formed on the color filter and having an opening, and a pixel electrode formed on the capping layer and connected to the first thin film transistor through the through hole. The opening exposes the color filter outside the through hole.11-12-2009
20090278131Thin film transistor array arrangement, organic light emitting display device having the same, and manufacturing method thereof - A thin film transistor (TFT) array arrangement, an organic light emitting display device that includes the TFT array arrangement and a method of making the TFT array arrangement and the organic light emitting display device. The method seeks to reduce the number of masks used in the making of the TFT array arrangement by employing half-tone masks that are followed by a two step etching process and by forming layers of the capacitor simultaneous with the formation of layers of the source, drain and pixel electrodes. As a result, individual layers of the capacitor are on the same level and are made of the same material as ones of the layers of the source, drain and pixel electrodes. The capacitor has three electrodes spaced apart by two separate dielectric layers to result in an increased capacity capacitor without increasing the size of the capacitor.11-12-2009
20090045408Display device - A display device includes a display panel which forms a plurality of sub pixels on a substrate thereof, and a drive circuit which is configured to drive the plurality of sub pixels, wherein the drive circuit has a thin film transistor formed on the substrate, and the thin film transistor has a semiconductor layer made of poly-silicon. The thin film transistor includes: a source electrode, a semiconductor layer and a drain electrode which are formed on the substrate; a gate insulation film which is formed on the source electrode, the semiconductor layer and the drain electrode; a gate electrode which is formed on the gate insulation film and above the semiconductor layer; an insulation film which is formed on the gate electrode; and a metal layer which is formed on the insulation film in a state that the metal layer covers at least a portion of the gate electrode.02-19-2009
20110169011SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - The present invention improves the aperture ratio of a pixel of a reflection-type display device or a reflection type display device without increasing the number of masks and without using a blackmask. A pixel electrode (07-14-2011
20110169010Organic light emitting diode display device and method of fabricating the same - An organic light emitting diode display device and a method of manufacturing thereof, the device including a substrate, the substrate including a pixel part and a circuit part; a first semiconductor layer and a second semiconductor layer on the pixel part of the substrate; a gate insulating layer on an entire surface of the substrate; gate electrodes on the gate insulating layer, the gate electrodes corresponding to the first semiconductor layer and the second semiconductor layer, respectively; source/drain electrodes insulated from the gate electrodes, the source/drain electrodes being connected to the first and second semiconductor layers, respectively; a first electrode connected to the source/drain electrodes of the first semiconductor layer; an organic layer on the first electrode; a second layer on the organic layer; and a metal catalyst layer under the first semiconductor layer.07-14-2011
20110169009ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD FOR MANUFACTURING THE SAME - In an organic light emitting diode (OLED) display and a manufacturing method thereof, the OLED display includes a substrate main body; an insulation layer pattern formed on the substrate main body, and including a first thickness layer and a second thickness layer thinner than the first thickness layer; a metal catalyst that is scattered on the first thickness layer of the insulation layer pattern; and a polycrystalline semiconductor layer formed on the insulation layer pattern, and divided into a first crystal area corresponding to the first thickness layer and to a portion of the second thickness layer adjacent to the first thickness layer and a second crystal area corresponding to the remaining part of the second thickness layer. The first crystal area of the polycrystalline semiconductor layer is crystallized through the metal catalyst, and the second crystal area of the polycrystalline semiconductor layer is solid phase crystallized.07-14-2011
20090272979Active Matrix Electronic Array Device - An active matrix device has an array (11-05-2009
20090272981DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A display substrate includes a gate electrode, a gate insulating layer, and a semiconductor layer that are sequentially formed on a substrate. Also, the display substrate includes a color filter layer formed on the substrate and exposing a portion of the semiconductor layer, and source and drain electrodes that each overlap with the semiconductor layer and the color filter layer. The gate electrode, the gate insulating layer, and the semiconductor layer have the same shape as each other, and the gate electrode is insulated from the gate insulating layer and the semiconductor layer by the color filter layer.11-05-2009
20090272980THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD OF THE SAME - A semiconductor including a channel, a data line including a source electrode, a drain electrode, and a pixel area definition member is formed on a gate insulating layer, and a passivation layer is deposited on the data line, the pixel area definition member, and the channel of the semiconductor. A first photosensitive film pattern including a first portion disposed at a position corresponding to the drain electrode and a second portion that is thicker than the first portion, and exposing the passivation layer at a position corresponding to the pixel area definition member, is formed on the passivation layer, the passivation layer that is exposed by using the first photosensitive film pattern as an etch mask is etched, and a second photosensitive film pattern is formed by etching the whole surface of the first photosensitive film pattern to remove the first portion. The pixel area definition member exposed by the passivation layer is etched, and the passivation layer exposed by the removal of the first portion and the semiconductor exposed by the removal of the pixel area definition member are etched. A conductor layer for a pixel electrode is formed, and the second photosensitive film pattern is removed to form the pixel electrode.11-05-2009
20090278134SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE - In a semiconductor device according to the present invention, an insulator layer on a substrate is provided with a trench. A gate electrode is formed in the trench so that an upper surface of the gate electrode is approximately flush with an upper surface of the insulator layer. On the gate electrode, a semiconductor layer is provided via a gate insulating film. At least one of a source electrode and a drain electrode is electrically connected to the semiconductor layer. Particularly, the gate insulating film includes an insulator coating film provided on the gate electrode, and an insulator CVD film formed on the insulator coating film.11-12-2009
20110198607THIN-FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, DISPLAY DEVICE, AND ELECTRONIC APPARATUS - A thin-film transistor manufactured on a transparent substrate has a structure of a top gate type crystalline silicon thin-film transistor in which a light blocking film, a base layer, a crystalline silicon film, a gate insulating film, and a gate electrode film arranged not to overlap at least a channel region are sequentially formed on the transparent substrate. The channel region has channel length L, LDD regions having LDD length d on both sides of the channel region, a source region, and a drain region are formed in the crystalline silicon film. The light blocking film is divided across the channel region. Interval x between the divided light blocking films is equal to or larger than channel length L and equal to or smaller than a sum of channel length L and a double of LDD length d (L+2d), allowing low the manufacturing cost and suppressed photo leak current.08-18-2011
20090283773Production Method of Semiconductor Device and Semiconductor Device - To provide a method for producing a high-performance semiconductor device by a simple and low-temperature process. The method for producing a semiconductor device, in accordance with the present invention, is a production method of a semiconductor device including a first insulating film, a semiconductor layer, and a second insulating film in this order on a substrate, the method including the steps of: forming a first insulating film including a hydrogen barrier layer; forming a semiconductor layer on a region where the hydrogen barrier layer of the first insulating film is formed; injecting hydrogen into the semiconductor layer; forming a second insulating film, the second insulating film including a hydrogen barrier layer on at least a region where the semiconductor layer is formed; and subjecting the semiconductor layer to hydrogenation annealing.11-19-2009
20090289259PIXEL STRUCTURE OF DISPLAY PANEL AND METHOD OF MAKING THE SAME - A pixel structure of a display panel is provided. The pixel structure includes a first storage capacitor formed by a pixel electrode and a common electrode pattern, and a second storage capacitor formed by an electrode pattern and the common electrode pattern. Accordingly, the storage capacitance is greatly improved without sacrificing the aperture ratio, or the aperture ratio is improved by reducing the area of the storage capacitor while the storage capacitance is maintained.11-26-2009
20090261342ARRAY SUBSTRATE OF THIN FILM TRANSISTOR LIQUID CRYSTAL DISPLAY AND METHOD OF MANUFACTURING THE SAME - An embodiment of the invention provides an array substrate of a thin film transistor liquid crystal display comprising a gate line and a data line formed on a base substrate, a pixel electrode formed in a pixel region defined by intersecting of the gate line and data line, and a thin film transistor (TFT) formed at the intersection as an switch device. The TFT comprises a gate electrode, a gate insulating layer, a transparent conductive layer, a source electrode and a drain electrode, an ohmic contact, a semiconductor layer, and a passivation layer in order from the base substrate. At the drain electrode side the transparent conductive layer is formed by the same layer as the pixel electrode and contacts with the drain electrode, and the source electrode is connected with the data line.10-22-2009
20090261340DISPLAY SUBSTRATE, LIQUID CRYSTAL DISPLAY DEVICE HAVING THE SAME AND METHOD OF MANUFACTURING A DISPLAY SUBSTRATE - A display substrate includes; a gate line disposed on a substrate, a first insulating layer disposed on the substrate including the gate line, the first insulating layer including an opening part extended in a direction crossing the gate line, a data line disposed on the first insulating layer and an inner surface of the opening part, the data line extending in a direction substantially parallel with an extension direction of the opening part, a protective layer disposed on the first insulating layer and the data line, a switching element electrically connected to the gate line and the data line and a pixel electrode electrically connected to the switching element.10-22-2009
20090261338ACTIVE MATRIX SUBSTRATE, DISPLAY DEVICE, AND TELEVISION RECEIVER - An active matrix substrate includes a plurality of transistors. A source electrode is connected with a data signal line, and a drain electrode is connected with a pixel electrode in each transistor. The source electrode is located on a semiconductor layer, and at least a portion of the drain electrode is overlapped with the gate electrode. A gate insulating film covering the gate electrode of each transistor has a thin section having a reduced film thickness, at a portion where the gate insulating film is overlapped with each gate electrode. An overlapping area of the thin section with the source electrode is smaller than an overlapping area of the thin section with the drain electrode. Thus, the active matrix substrate can prevent the generation of short-circuits between the signal lines (between the data signal line and a scanning signal line) in a TFT forming region, while guaranteeing TFT characteristics.10-22-2009
20090261337SEMICONDUCTOR DEVICE - It is an object to provide a transistor having a new multigate structure in which operating characteristics and reliability are improved. In a transistor having a multigate structure, which includes two gate electrodes electrically connected to each other and a semiconductor layer including two channel regions connected in series formed between a source region and a drain region, and a high concentration impurity region is formed between the two channel regions; the channel length of the channel region adjacent to the source region is longer than the channel length of the channel region adjacent to the drain region.10-22-2009
20120292628THIN FILM TRANSISTOR, ARRAY SUBSTRATE AND PREPARATION METHOD THEREOF - One or more embodiments of the disclosed technology provide a thin film transistor, an array substrate and a method for preparing the same. The thin film transistor comprises a base substrate, and a gate electrode, a gate insulating layer, an active layer, an ohmic contact layer, a source electrode, a drain electrode and a passivation layer prepared on the base substrate in this order. The active layer is formed of microcrystalline silicon, and the active layer comprises an active layer lower portion and an active layer upper portion, and the active layer lower portion is microcrystalline silicon obtained by using hydrogen plasma to treat at least two layers of amorphous silicon thin film prepared in a layer-by-layer manner.11-22-2012
20100127273Light emitting device and manufacturing method thereof and light emitting display and manufacturing method thereof - The present invention provides a light emitting device comprising a substrate comprising a thin film transistor, a first electrode formed on the substrate and electrically connected to the thin film transistor, a light emitting part formed on the first electrode;05-27-2010
20110204375THIN FILM TRANSISTOR STRUCTURE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE - A high-performance thin film transistor structure which is easily manufactured is provided. The thin film transistor structure includes: a first electrode; second and third electrodes apart from each other in a hierarchical level different from that of the first electrode; first, second, and third wirings connected to the first, second, and third electrodes, respectively; a main stack body disposed so as to be opposed to the first electrode with an interlayer insulating layer in between, between the first electrode, and the second and third electrodes; and a sub stack body including an insulating layer and a semiconductor layer, disposed so as to be opposed to the first wiring with the interlayer insulating layer in between, between the first and second wirings in a position where the first and second wirings overlap and/or between the first and third wirings in a position where the first and third wirings overlap.08-25-2011
20110198606THIN FILM TRANSISTOR AND DISPLAY DEVICE - An exemplary aspect of the present invention is a thin film transistor including: a gate electrode formed on a substrate; a gate insulating film that includes a nitride film and covers the gate electrode; and a semiconductor layer that is disposed to be opposed to the gate electrode with the gate insulating film interposed therebetween, and has a microcrystalline semiconductor layer formed in at least an interface in contact with the nitride film, in which the microcrystalline semiconductor layer contains oxygen at a concentration higher than that of contained nitrogen in at least the vicinity of the interface with the nitride film, the nitrogen being diffused from the nitride film.08-18-2011
20090050893THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE SAME - A thin film transistor (TFT) includes a substrate, a semiconductor layer disposed on the substrate and crystallized using a metal catalyst, a gate insulating layer disposed on the semiconductor layer, a gate electrode disposed on the gate insulating layer, an interlayer insulating layer disposed on the gate electrode, and source and drain electrodes disposed on the interlayer insulating layer and electrically connected to source and drain regions of the semiconductor layer through contact holes exposing predetermined regions of the source and drain regions of the semiconductor layer formed within the gate insulating layer and the interlayer insulating layer. A metal silicide including a metal that is different from the metal catalyst is present within a region of the semiconductor layer under the contact hole from the surface of the semiconductor layer to a predetermined depth.02-26-2009
20080283843DISPLAY DEVICE AND ELECTRONIC DEVICE USING THIN-FILM TRANSISTORS FORMED ON SEMICONDUCTOR THIN FILMS WHICH ARE CRYSTALLIZED ON INSULATING SUBSTRATES - A method of receiving video data, a control signal, etc. via a non-contact transmission path is adopted, and a receiving circuit for receiving and amplifying a signal is formed on the same insulating substrate as a display device. Thus, there are provided a thin-film transistor which is formed in a semiconductor thin film that is formed on the insulating substrate and crystallized in a predetermined direction, and an inductor for forming an inductive-coupling circuit, which is formed by using an electrically conductive thin film provided on the insulating substrate. The direction of movement of carriers flowing in the thin-film transistor is parallel to the direction of crystallization of the semiconductor thin film, and the inductor and the thin-film transistor are integrated so as to be electrically coupled directly or indirectly.11-20-2008
20080290345SEMICONDUCTOR DEVICE HAVING DISPLAY DEVICE - A semiconductor integrated circuit having a high withstand voltage TFT and a TFT which is capable of operating at high speed in a circuit of thin film transistors (TFT) and methods for fabricating such circuit will be provided. A gate insulating film of the TFT required to operate at high speed (e.g., TFT used for a logic circuit) is relatively thinned less than a gate insulating film of the TFT which is required to have high withstand voltage (e.g., TFT used for switching high voltage signals).11-27-2008
20080303030Display device and method of manufacturing the same - A semiconductor device includes an insulating substrate and a TFT element disposed on the substrate. The TFT element includes a gate electrode, a gate insulating film, a semiconductor layer, and a source electrode and a drain electrode arranged in that order on the insulating substrate. The semiconductor layer includes an active layer composed of polycrystalline semiconductor and a contact layer segment interposed between the active layer and the source electrode and another contact layer segment interposed between the active layer and the drain electrode. The source and drain electrodes each have a first face facing the opposite face of the active layer from the interface with the gate insulating layer and a second face facing an etched side face of the active layer. Each contact layer segment is disposed between the active layer and each of the first and second faces of the source or drain electrode.12-11-2008
20080308810SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - The invention relates to a semiconductor device and a method for manufacturing the semiconductor device, which includes: an insulating film over a substrate; a first pixel electrode embedded in the insulating film; an island-shaped single-crystal semiconductor layer over the insulating film; a gate insulating film and a gate electrode; an interlayer insulating film which covers the island-shaped single-crystal semiconductor layer and the gate electrode; a wiring which electrically connects a high-concentration impurity region and the first pixel electrode to each other; a partition which covers the interlayer insulating film, the island-shaped single-crystal semiconductor layer, and the gate electrode and has an opening in a region over the first pixel electrode; a light-emitting layer formed in a region which is over the pixel electrode and surrounded by the partition; and a second pixel electrode electrically connected to the light-emitting layer. A surface of the first pixel electrode, which is in contact with the light-emitting layer, is flat, and a surface where the insulating film is in contact with the island-shaped single-crystal semiconductor layer roughly coincides with a surface where the first pixel electrode is in contact with the light-emitting layer.12-18-2008
20080210947Solid-state imaging device - A solid-state imaging device having an arrangement in which well contact is achieved for each pixel is provided. In the solid-state imaging device, a well contact part is formed in an activation region of a photoelectric conversion portion. The well contact part fixes a well in which the photoelectric conversion portion and transistors of the pixel are provided at a predetermined potential.09-04-2008
20080296582TFT-LCD ARRAY SUBSTRATE - A thin film transistor liquid crystal display (TFT-LCD) array substrate with a repairable pixel structure is provided. The array substrate comprises a gate line and a data line, and the gate line and the data line intersect with each other to define a pixel unit. The pixel unit comprises a TFT and a pixel electrode, and a spare source electrode, a spare drain electrode, and a spare channel region are formed alongside a channel region of the TFT to form a spare TFT.12-04-2008
20090014727THIN FILM ARRAY PANEL AND MANUFACTURING METHOD THEREOF - A thin film array panel is provided, which includes: a plurality of signal lines including contact parts for contact with an external device; a plurality of thin film transistors connected to the signal lines; an insulating layer formed on the signal lines and the thin film transistors; and a plurality of pixel electrodes formed on the insulating layer and connected to the thin film transistors, wherein the insulating layer includes a contact portion disposed on the contact parts of the signal lines and having a thickness smaller than other portions and the contact portion of the insulating layer includes an inclined portion having an inclination angle smaller than about 45 degrees.01-15-2009
20080272375THIN FILM TRANSISTOR ARRAY PANEL, DISPLAY DEVICE INCLUDING THE PANEL, AND METHOD FOR MANUFACTURING THE DISPLAY DEVICE - A thin film transistor array panel, a display device including the thin film transistor array panel, and a method for manufacturing the display device. The thin film transistor array panel includes a substrate having first and second surfaces, a first thin film form formed on the first surface and including a first electrode, and a second thin film form formed on the second surface and including a second electrode, to thereby improve the viewing angle and contrast ratio of the display device.11-06-2008
20080272376Semiconductor Device and Method of Manufacturing the Same - In a semiconductor device having a substrate which has a metal surface, an insulating film which is formed on the substrate having the metal surface, and a pixel unit which is formed on the insulating film; the pixel unit includes a TFT, and wiring lines connected with the TFT, and a storage capacitor is constituted by the substrate (11-06-2008
20090152564THIN FILM TRANSISTOR ARRAY SUBSTRATE - A thin film transistor array substrate includes an insulating substrate, a plurality of scan lines, an insulating layer, a plurality of data lines, and a plurality of pixels arranged in an array of rows and columns. The pixels in each row are aligned in a row direction, the pixels in each column are aligned in a column direction, and the pixels are separated from each other by the scan lines and the data lines. Each pixel includes a thin film transistor and a pixel electrode. The pixel electrode has at least one opening that extends from the periphery to the inside of the pixel electrode and at least one extension part that extends in the row direction into an opening of a neighboring pixel electrode in the same row. Each of the scan lines alternately controls one of the pixel electrodes in a first row and one of the pixel electrodes in a second row immediately adjacent to the first row.06-18-2009
20090085038SUBSTRATE FOR DISPLAY DEVICE, MANUFACTURING METHOD FOR SAME AND DISPLAY DEVICE - The present invention provides the substrate for a display device, comprising a scan line, a signal line and a switching element on an insulating substrate, and further comprising an interlayer insulation film and a pixel electrode, the switching element is provided at an intersection of the scan line and the signal line, and have a gate electrode connected to the scan line, a source electrode connected to the signal line, and a drain electrode connected to the pixel electrode, the interlayer insulation film has a contact hole for connecting the drain electrode of the switching element to the pixel electrode, and a protective layer is provided above the scan line and/or the signal line in the substrate for a display device.04-02-2009
20090152560Method for fabricating thin film transistor array substrate and thin film transistor array substrate - After forming a gate electrode (06-18-2009
20080258148THIN FILM TRANSISTOR AND ORGANIC ELECTROLUMINESCENCE DISPLAY USING THE SAME - In a thin film transistor, a semiconductor layer containing Si and Ge is applied, a Ge concentration of this semiconductor layer is high at the side of the insulating substrate, and crystalline orientation of the semiconductor layer indicates a random orientation in a region of 20 nm from the side of the insulating substrate, and indicates a (111), (110) or (100) preferential orientation at the film surface side of the semiconductor layer.10-23-2008
20090152563PHOTO-SENSOR AND MANUFACTURING METHOD FOR PHOTO-SENSOR - The present invention prevents disconnection of a source electrode and a drain electrode, taking account of adhesion with amorphous silicon. A photo-sensor according to the present invention is a photo-sensor having a TFT array substrate that has an element region in which thin film transistors are arranged in an array, the photo-sensor comprising a passivation film which is provided above the thin film transistor and in which a contact hole is formed, and a photo-diode which is connected to a drain electrode of the thin film transistor via the contact hole, wherein the passivation film and a gate insulation film are removed in the peripheral area outside the element region of the TFT array substrate, and the edge of the passivation film in the peripheral area is formed at the same position as the edge of the gate insulation film on the periphery of the substrate, or outside the edge of the gate insulation film.06-18-2009
20090152562Liquid crystal display device and fabricating method thereof - A method of fabricating a liquid crystal display device includes forming first, second, and third active patterns on a substrate having a pixel region and a driving region, wherein the first and second active patterns are in the driving region and the third active pattern is in the pixel region, the first, second, and third active patterns each having an active region, a source region, and a drain region with the source and drain regions on opposing sides of the active region, forming a gate insulator on the first, second, and third active patterns, forming first, second, and third gate electrodes on the gate insulator, wherein the first, second, and third gate electrodes correspond to the active regions of the first, second, and third active patterns, respectively, doping the source and drain regions of the first, second, and third active patterns with n− ions using the first, second, and third gate electrodes as a doping mask, doping the n− doped source and drain regions of the second active pattern with p+ ions, forming an interlayer insulating film on the first, second, and third gate electrodes and patterning the interlayer insulating film to form contact holes exposing each source and drain regions of the first, second, and third active patterns, and doping the source and drain regions of the first, second, and third active patterns with n+ ions through the contact holes.06-18-2009
20090127563THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - According to an embodiment, the method of manufacturing a thin film transistor array panel includes forming a gate wire, a data wire, and a thin film transistor on a substrate and depositing an organic material layer on the gate wire, the data wire, and the thin film transistor. The method further includes forming an optical pattern on the upper surface of the organic material layer, depositing a reflecting electrode layer on the organic material layer, etching the reflecting electrode layer, etching the organic material layer after etching the reflecting electrode layer, and forming a pixel electrode on the reflecting electrode layer. Accordingly, the optical pattern on the upper surface of organic material may be transcribed to the reflecting electrode layer without damage and with clarity.05-21-2009
20100200861ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD OF MANUFACTURING THE SAME - An organic light emitting diode display and a method of manufacturing the display, the organic light emitting diode display including: a substrate; a semiconductor layer formed on the substrate, having a channel region, a source region, and a drain region; a gate insulating layer covering the semiconductor layer; a gate electrode formed on the channel region; and an interlayer insulating layer covering the gate electrode. Source and drain electrodes are formed on the interlayer insulating layer, and are connected to the source and drain regions, respectively. A pixel electrode extends from the drain electrode, in the same plane as the source and drain electrodes. The source and drain electrodes each have a first conductive layer formed of a transparent conductive material, and a metallic second conductive layer formed on the first conductive layer. The pixel electrode is formed from the first conductive layer.08-12-2010
20100200862LIQUID CRYSTAL DISPLAY DEVICE AND FABRICATING METHOD THEREOF - A liquid crystal display device may comprise a semiconductor layer on a substrate and including a channel portion and ohmic contact portions at both sides of the channel portion, wherein an edge portion of the semiconductor layer has a side surface of a substantially tapered shape; a gate insulating layer covering the semiconductor layer; a gate electrode on the gate insulating layer and substantially corresponding to the channel portion; source and drain electrodes contacting the semiconductor layer; and a pixel electrode contacting the drain electrode.08-12-2010
20090261341ORGANIC LIGHT EMITTING DISPLAY AND METHOD OF MANUFACTURING THE SAME - An organic light emitting display includes a pixel part adapted to generate a light and a metal oxide layer. The metal oxide layer is formed by oxidation of a metal layer combined with oxygen of gas or humidity in an inner space of the organic light emitting display. Accordingly, gas or humidity in the organic light emitting display is removed by the oxidation of the metal oxide layer to thereby inhibit deterioration in a light emitting function of the pixel part.10-22-2009
20090184324THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME - The present invention relates to a thin film transistor array panel and a manufacturing method thereof. The thin film transistor array panel according to the present invention includes a substrate, a light blocking member formed on the substrate, a gate line disposed on the light blocking member. The gate line and the light blocking member define a closed region A color filter is formed in the closed region and contacts the side surface of the gate line. A gate insulating layer is formed on the gate line and the color filter, a data line and a drain electrode are formed on the gate insulating layer, and a pixel electrode is connected to the drain electrode.07-23-2009
20090184323THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME - The present invention relates to a thin film transistor array panel and a method for manufacturing the same. A thin film transistor array panel according to the present invention includes a substrate, a light blocking member formed on the substrate and including a first furrow and a receiving portion, a gate line disposed on the first furrow, a semiconductor layer disposed on the gate line, a source electrode and a drain electrode formed on the semiconductor layer, and a pixel electrode connected to the drain electrode. The source electrode is an extension of the data line.07-23-2009
20090140261MOS SOLID-STATE IMAGE DEVICE AND METHOD OF MANUFACTURING THE SAME - A sidewall film 06-04-2009
20090140260Liquid crystal display device and fabricating method thereof - A method for fabricating a liquid crystal display (LCD) device comprises forming an active pattern and a data line on a substrate, the active pattern including a source, a drain, and a channel regions; a first insulation film on a portion of the substrate; forming a gate electrode in a portion of the active pattern where the first insulation film is formed; a second insulation film on the substrate; forming a plurality of first contact holes exposing a portion of the source and drain regions and a second contact hole exposing a portion of the data line; forming a source electrode from a transparent conductive material connected to a source region within the respective first contact hole and a data line within the second contact hole; and forming a pixel and a drain electrodes from the transparent conductive material connected to a drain region within the respective first contact hole.06-04-2009
20120068185ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD FOR MANUFACTURING THE SAME - An organic light emitting diode (OLED) display and a method for manufacturing the same are provided. The OLED display includes a substrate, an active layer and a capacitor lower electrode positioned on the substrate, a gate insulating layer positioned on the active layer and the capacitor lower electrode, a gate electrode positioned on the gate insulating layer at a location corresponding to the active layer, a capacitor upper electrode positioned on the gate insulating layer at a location corresponding to the capacitor lower electrode, a first electrode positioned to be separated from the gate electrode and the capacitor upper electrode, an interlayer insulating layer positioned on the gate electrode, the capacitor upper electrode, and the first electrode, a source electrode and a drain electrode positioned on the interlayer insulating layer, and a bank layer positioned on the source and drain electrodes.03-22-2012
20110220909BACKPLANE STRUCTURES FOR SOLUTION PROCESSED ELECTRONIC DEVICES - There is provided a backplane for an organic electronic device. The backplane has a TFT substrate having a multiplicity of electrode structures thereon. There are spaces around the electrode structures and a layer of inorganic filler in the spaces. The thickness of the layer of inorganic filler is the same as the thickness of the electrode structures.09-15-2011
20100276694DISPLAY DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC DEVICE HAVING THE SAME - In a case where a p-channel thin film transistor is used as a thin film transistor that is electrically connected to a light-emitting element and drives the light-emitting element, a value of cutoff current of the p-channel thin film transistor is made lower than that of a p-channel thin film transistor of a driver circuit. Specifically, channel doping is selectively performed on a semiconductor layer of a thin film transistor included in a pixel.11-04-2010
20110220907SEMICONDUCTOR DEVICE - In an inverted staggered thin film transistor, a microcrystalline silicon film and a pair of silicon carbide films are provided between a gate insulating film and wirings serving as a source wiring and a drain wiring. The microcrystalline silicon film is formed on the gate insulating film side and the pair of silicon carbide films are formed on the wiring side. In such a manner, a semiconductor device having favorable electric characteristics can be manufactured with high productivity.09-15-2011
20090159895Array substrate for liquid crystal display device and fabricating method of the same - A method of manufacturing an array substrate for a liquid crystal display device includes forming a gate line, a gate pad, a gate electrode, and a data pad on a substrate through a first mask process, forming a gate insulating layer on a substantial part of an entire surface of the substrate including the gate line, the gate pad, the gate electrode, and the data pad, forming a data line, a source-drain pattern and an active layer on the gate insulating layer and forming a gate pad contact hole and a data pad contact hole in the gate insulating layer through a second mask process, and forming a pixel electrode, a gate pad terminal, a data pad terminal, a source electrode, a drain electrode, and an ohmic contact layer through a third mask process.06-25-2009
20090085041THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - A method of manufacturing a thin film transistor array panel is provided, which includes: forming a thin film transistor including a gate electrode, a drain electrode, a source electrode and a semiconductor on a substrate; forming a first passivation layer on the drain and the source electrodes; forming a transparent conductive layer on the first passivation layer; etching the transparent conductive layer using a photoresist as an etch mask to expose the portion of the first passivation layer and to form a pixel electrode connected the drain electrode; ashing the first passivation layer and the photoresist; and removing the photoresist.04-02-2009
20090085040Liquid crystal display device and fabricating method thereof - A thin film transistor substrate and a fabricating method simplify a process and enlarge a capacitance value of a storage capacitor without any reduction of aperture ratio. A transparent first conductive layer and an opaque second conductive layer of a double-layer structured gate line are formed having a step coverage. A pixel electrode is provided on the gate insulating film within a pixel hole of said pixel area passing through the passivation film to be connected to the thin film transistor. A storage capacitor overlaps with the pixel electrode with having the gate insulating film therebetween and has a lower storage electrode protruded from the first conductive layer.04-02-2009
20090085039Image display system and fabrication method thereof - The invention provides a method for fabricating a low-temperature polysilicon (LTPS) driving circuit and thin film transistor. The method includes: providing a substrate, forming an active layer, forming a gate insulating layer, forming a dielectric layer having an extending portion and forming a gate electrode. The extending portion of the dielectric layer and the gate electrode are formed during the same step, and they can serve as a mask during a later doping process so that a lightly doped source/drain region and a source/drain region are formed during the same time without forming extra masks.04-02-2009
20090101915PHOTO SENSOR AND FABRICATION METHOD THEREOF - A photo sensor includes a patterned shielding conductive layer disposed on a transparent substrate, and a buffer dielectric layer, a patterned semiconductor layer, and a dielectric layer disposed on the patterned shielding layer in order. The patterned semiconductor layer includes an intrinsic region, a first doped region, and a second doped region, wherein the first and second doped regions are positioned at two sides of the intrinsic region separately. A patterned transparent conductive layer is disposed on the dielectric layer and covers the boundary of the intrinsic region and the first doped region and the boundary of the intrinsic region and the second doped region. The patterned transparent conductive layer is electrically connected to the patterned shielding conductive layer.04-23-2009
20090101917THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY APPARATUS HAVING THE SAME - A TFT substrate with reduced pixel defect rate is presented. The TFT substrate includes a pixel electrode, a negative line to apply a reverse voltage to the pixel electrode, and a recovery transistor including a drain electrode overlapping a part of the negative line with a insulating layer disposed between the negative line and the drain electrode. A contact hole is formed on the negative line and the drain electrode, and a bridge electrode connects the negative line and the drain electrode through the contact hole.04-23-2009
20110227088EL Display Device and Method for Manufacturing the Same - Plurality of pixels (09-22-2011
20090152561ORGANIC THIN FILM TRANSISTOR DISPLAY SUBSTRATE, METHOD OF FABRICATING THE SAME, AND DISPLAY APPARATUS HAVING THE SAME - In an organic thin film transistor display substrate, a thin film transistor and a pixel electrode electrically connected to the thin film transistor are formed on an array substrate in which a plurality of pixel areas is defined. Also, color filters are formed in the pixel areas. Each color filter is provided with an opening formed therethrough and an active pattern of thin film transistor is received into the opening. Since the active pattern is formed on the array substrate through an inkjet method, the color filter may receive the active pattern therein in lieu of a bank pattern, thereby simplifying the structure of the organic thin film transistor display substrate and improving its productivity.06-18-2009
20090212300LIQUID CRYSTAL DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE - An objective is simplification of a manufacturing method of a liquid crystal display device or the like. In a manufacturing method of a thin film transistor, a stack in which a first conductive film, an insulating film, a semiconductor film, an impurity semiconductor film, and a second conductive film are stacked in this order is formed, and the first conductive film is exposed by first etching and a pattern of the second conductive film is formed by second etching. Further, after thin film transistors are formed, a color filter layer is formed so that unevenness caused by the thin film transistors or the like is relieved; thus, the level difference of the surface where the pixel electrode layer is formed is reduced. Alternatively, a color filter layer is selectively formed utilizing the unevenness caused by thin film transistors or the like.08-27-2009
20120104405ARRAY SUBSTRATE FOR ORGANIC ELECTROLUMINESCENT DEVICE AND METHOD OF FABRICATING THE SAME - A method of fabricating an array substrate for an organic electroluminescent device includes forming a semiconductor layer of polysilicon in an element region, and a semiconductor pattern of polysilicon in a storage region on a substrate; forming a multiple-layered gate electrode corresponding to a center portion of the semiconductor layer and a first storage electrode corresponding to the semiconductor pattern; performing an impurity-doping to make a portion of the semiconductor layer not covered by the gate electrode into an ohmic contact layer and make the semiconductor pattern into a second storage electrode; forming source and drain electrodes and a third storage electrode corresponding to the first storage electrode; forming a first electrode contacting the drain electrode and a fourth storage electrode corresponding to the third storage electrode.05-03-2012
20090200558Method and apparatus of fabricating liquid crystal display device - A method and an apparatus of fabricating a liquid crystal display device adapted to improve a lift-off efficiency are disclosed. The liquid crystal display device is also disclosed. The method includes forming a first thin film on a substrate; forming a photo-resist pattern on the first thin film; etching the first thin film using the photo-resist pattern as a mask; forming a second thin film on the substrate having the photo-resist pattern; forming a plurality of stripper infiltration paths; and removing the photo-resist pattern and the second thin film using a stripper within the stripper infiltration paths. The device includes two substrates facing each other; a liquid crystal layer; data lines and gate lines that cross each other to define pixel regions; thin film transistors; pixel electrodes connected to the thin film transistors; and an inorganic layer in each pixel region, wherein the inorganic layer includes a plurality of cracks.08-13-2009
20090212299DISPLAY ELEMENT - A thin film transistor layer including a thin film transistor is formed at a liquid crystal layer side of a color filter layer on an array substrate. Since it becomes possible to form the color filter layer at a position on a relatively flat glass substrate, satisfactory characteristics of the color filter layer can be obtained. The color filter layer is unlikely to have influence on the thin film transistor layer, so that the yield can be improved.08-27-2009
20090242894Thin-Film-Transistor Structure, Pixel Structure and Manufacturing Method Thereof - A thin-film-transistor (TFT) structure, a pixel structure and a manufacturing method thereof are provided. The TFT structure is formed in the pixel structure of a liquid crystal display (LCD). The TFT structure comprises a gate, a first dielectric layer, a patterned semiconductor layer, a second dielectric layer and a third dielectric layer stacked sequentially. The second dielectric layer and the third dielectric layer are formed on part of the patterned semiconductor layer to define a covered region and an uncovered region on the patterned semiconductor layer. The uncovered region of the second dielectric layer and the third dielectric layer jointly define an opening, which has at least one top lateral dimension and a bottom lateral dimension smaller than the top lateral dimension. Thereby, a lightly doped structure is formed in a portion of the covered region via the second dielectric layer after ion implantation.10-01-2009
20090242895THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHTING EMITTING DIODE DISPLAY DEVICE INCLUDING THE SAME - A thin film transistor, a method of fabricating the same, and an organic light emitting diode display device including the same. The thin film transistor includes: a substrate; a semiconductor layer disposed on the substrate, including a channel region, source/drain regions, and a body contact region; a gate insulating layer disposed on the semiconductor layer so as to expose the body contact region; a gate electrode disposed on the gate insulating layer, so as to contact the body contact region; an interlayer insulating layer disposed on the gate electrode; and source/drain electrodes disposed on the interlayer insulating layer and electrically connected to the source/drain regions. The body contact region is formed in an edge of the semiconductor layer.10-01-2009
20120032181SEMICONDUCTOR DEVICE AND DISPLAY DEVICE - It is an object of the invention to provide a thin, lightweight, high performance, and low in cost semiconductor device and a display device by reducing an arrangement area required for a power supply wiring and a ground wiring of a functional circuit and decreasing a drop in power supply voltage and a rise in ground voltage. In the functional circuit of the semiconductor device and the display device, a power supply wiring and a ground wiring are formed in a comb-like arrangement, and the tips thereof are electrically connected with a first wiring, a second wiring, and a contact between the first wiring and the second wiring, thereby forming in a grid-like arrangement. The drop in power supply voltage and the rise in ground voltage can be decreased and the arrangement area can be decreased in the grid-like arrangement.02-09-2012
20090230403Dual Gate Layout for Thin Film Transistor - A dual gate layout of a thin film transistor of liquid crystal display to alleviate dark current leakage is disclosed. The layout comprises (1) a polysilicon on a substrate having a L-shaped or a snake shaped from top-view, which has a heavily doped source region, a first lightly doped region, a first gate channel, a second lightly doped region, a second gate channel, a third lightly doped region and a heavily doped drain region formed in order therein; (2) a gate oxide layer formed on the polysilicon layer and the substrate, (3) a gate metal layer then formed on the gate oxide layer having a scanning line and an extension portion with a L-shaped or an I-shaped. The gate metal intersects with the polysilicon layer thereto define the forgoing gate channels. Among of gate channels, at least one is along the signal line, which is connected to the source region through a source contact.09-17-2009
20110140119ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display device and a method of manufacturing the same, the organic light-emitting display device including: a substrate; a display unit disposed on the substrate; a sealing substrate disposed facing the display unit; a sealant adhering the substrate to the sealing substrate; and a getter formed on surfaces of the substrate, the sealing substrate, and the sealant that face a space formed inside the display device.06-16-2011
20090256158ARRAY SUBSTRATE OF LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An array substrate comprising a base substrate, a common electrode, a gate line, a data line, a thin film transistor, a passivation layer and a pixel electrode of “10-15-2009
20090242893Semiconductor device, production method thereof, and display device - The present invention provides a semiconductor device which can be produced by simple and cheap processes and effectively achieve improved performances and a reduced electric power consumption. Further, the present invention provides a production method thereof and a display device including the semiconductor device or a semiconductor device produced by the production method. The present invention is a semiconductor device including a pixel part and an integrated circuit part on a substrate, the pixel part including a switching element having a gate electrode formed on a semiconductor thin film, the integrated circuit part including a semiconductor layer on a gate electrode, wherein a passivation film is formed on the gate electrode in the pixel part.10-01-2009
20090250701Circuit board, electronic device, and method for producing circuit board - The present invention provides a circuit board which can improve characteristics of a circuit element, an electronic device, and a method for producing a circuit board. The method for producing a circuit board of the present invention is a method for producing a circuit board including one or more polysilicon layers at the same layer level, wherein the method includes the steps of: forming a photoresist film on the polysilicon layer; forming a photoresist pattern film having side surfaces with different inclination angles by patterning the photoresist film; forming the one or more polysilicon layers having side surfaces with different inclination angles by etching the polysilicon film using the photoresist pattern film.10-08-2009
20090250704Semiconductor Device and Method of Fabricating the Same - An active matrix display device having a pixel structure in which pixel electrodes, gate wirings and source wirings are suitably arranged in the pixel portions to realize a high numerical aperture without increasing the number of masks or the number of steps. The device comprises a gate electrode and a source wiring on an insulating surface, a first insulating layer on the gate electrode and on the source wiring, a semiconductor layer on the first insulating film, a second insulating layer on the semiconductor film, a gate wiring connected to the gate electrode on the second insulating layer, a connection electrode for connecting the source wiring and the semiconductor layer together, and a pixel electrode connected to the semiconductor layer.10-08-2009
20090250703SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - It is provided a contacting method when a plurality of films to be peeled are laminating. Reduction of total layout area, miniaturization of a module, weight reduction, thinning, narrowing a frame of a display device, or the like can be realized by sequentially laminating a plurality of films to be peeled which are once separately formed over a plastic film or the like. Moreover, reliable contact having high degree of freedom is realized by forming each layer having a connection face of a conductive material and by patterning with the use of a photomask having the same pattern.10-08-2009
20090250702STATIC-TOLERANT DISPLAY APPARATUS - A display apparatus includes a thin film transistor having a top-gate structure and a storage capacitor that are arranged on a first substrate. An upper electrode of the storage capacitor has a size larger than a size of a lower electrode, so as to cover an entire surface of the lower electrode in a plan view. Thus, electric field caused by static electricity may be prevented from accumulating at a corner of the upper electrode when the electric filed flows from the lower electrode to the upper electrode, thereby preventing an intermediate insulating layer from being burnt.10-08-2009
20090256156Hybrid imaging sensor with approximately equal potential photodiodes - A hybrid MOS or CMOS image sensor. The sensor includes photon-sensing elements comprised of an array of photo-sensing regions deposited in the form of separate islands on or in a substrate. Pixel circuitry is created on and/or in the substrate at or near the edge of or beneath the photon-sensing elements. The photo-sensing elements may be comprised of multiple photo-sensing semiconductor layers or be created in a single photon-sensing semiconductor layer. Special circuitry is provided to keep the potential across the pixel photon-sensing element at or near zero volts to minimize or eliminate dark current. The potential difference is preferably less than 1.0 volt. The circuitry also keeps the small potential difference across the photodiodes constant or approximately constant throughout the charge collection cycle. In preferred embodiments the substrate is a crystalline substrate and the photon-sensing elements are separated from the substrate by a dielectric material except for a hole at the bottom through which the material of the photon-sensing element can be grown epitaxially from the substrate.10-15-2009
20090256155THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME - A thin film transistor panel includes a substrate, a gate line extending in a first direction on the substrate, a data line disposed on the substrate, the data line crossing the gate line with an insulation layer therebetween and extending in a second direction, a thin film transistor including a control terminal connected to the gate line, an input terminal connected to the data line, and an output terminal, a color filter disposed on the thin film transistor, the color filter having an opening corresponding to the output terminal of the thin film transistor, a light blocking member disposed in the opening of the color filter, the light blocking member exposing a first region of a first end portion of the output terminal of the thin film transistor and having an output terminal light blocking portion enclosing the circumference of the first region, and a pixel electrode disposed on the light blocking member and the color filter, the pixel electrode contacting the first region of the output terminal.10-15-2009
20120193635SEMICONDUCTOR DEVICE, PROCESS FOR PRODUCTION OF THE SEMICONDUCTOR DEVICE, AND DISPLAY DEVICE EQUIPPED WITH THE SEMICONDUCTOR DEVICE - A thin film diode (08-02-2012
20110127538ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE - An organic light emitting diode (OLED) display device, including a first substrate and a second substrate facing each other, a sealant arranged between the first and second substrates to adhere the first and second substrates together, a plurality of interconnections arranged on one of the first and second substrates and a plurality of cladding parts covering at least a portion of each of the plurality of interconnections at a location that corresponds to the sealant, each of the cladding parts including a material having a higher melting point than that of the interconnections. By including the cladding parts, a short circuit between the interconnections caused by heat applied to the sealant can be prevented, and safety and reliability of the OLED display device can be improved.06-02-2011
20090121233ELECTRO-OPTICAL DEVICE AND ELECTRONIC APPARATUS - An electro-optical device includes a semiconductor layer, a gate electrode, and a first insulating film, and a second insulating under the semiconductor layer. The first insulating film overlaps a junction region, but not a channel region, of the semiconductor layer. The gate electrode includes a first extended portion that continuously covers an upper and side face and of the first insulating film at the junction region. The gate electrode includes a second extended portion that overlaps and fills a groove in the second insulating that extends along at least the junction region.05-14-2009
20090121232ARRAY SUBSTRATE, METHOD FOR MANUFACTURING THE SAME AND DISPLAY PANEL HAVING THE SAME - An array substrate, a method for manufacturing the array substrate and a display panel having the array substrate are presented. The method includes forming a thin-film transistor (TFT) on a base substrate. A passivation layer covers the TFT. A color filter layer is formed on the passivation layer. An organic protective layer is formed on the color filter layer, and has a type of photoresist that is substantially the same as that of the color filter layer. A contact hole is formed through the organic protective layer, the color filter layer and the passivation layer, partially exposing the TFT. A pixel electrode is formed on the organic protective layer to be electrically connected to a portion of the TFT. The contact hole may be formed through the organic protective layer, the color filter layer and the passivation layer by a single photolithography process, simplifying the array substrate manufacturing process.05-14-2009
20100155737METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A purpose of the invention is to provide a method for leveling a semiconductor layer without increasing the number and the complication of manufacturing processes as well as without deteriorating a crystal characteristic, and a method for leveling a surface of a semiconductor layer to stabilize an interface between the surface of the semiconductor layer and a gate insulating film, in order to achieve a TFT having a good characteristic. In an atmosphere of one kind or a plural kinds of gas selected from hydrogen or inert gas (nitrogen, argon, helium, neon, krypton and xenon), radiation with a laser beam in the first, second and third conditions is carried out in order, wherein the first condition laser beam is radiated for crystallizing a semiconductor film or improving a crystal characteristic; the second condition laser beam is radiated for eliminating an oxide film; and the third condition laser beam is radiated for leveling a surface of the crystallized semiconductor film.06-24-2010
20110042679Electro-Optical Device and Electronic Device - An object of the present invention is to provide an EL display device, which has a high operating performance and reliability.02-24-2011
20100176402THIN FILM TRANSISTOR SUBSTRATE, ELECTRONIC APPARATUS, AND METHODS FOR FABRICATING THE SAME - A TFT substrate includes a substrate and at least a TFT disposed thereon. The TFT includes a semiconductor island and at least a gate. The semiconductor island has a source region, a drain region, and a channel region interposed therebetween. The semiconductor island has sub-grain boundaries. The gate corresponds to the channel region. A first included angle between an extending direction of the gate and a line connecting the centroid of the source region with the centroid of the drain region is not substantially equal to 90 degrees. A second included angle between the sub-grain boundaries in the channel region and the line connecting the centroid of the source region with the centroid of the drain region is not substantially equal to 0 degree or 90 degrees. Additionally, a method of fabricating a TFT substrate, an electronic apparatus, and a method of fabricating the electronic apparatus are also provided.07-15-2010
20100163885THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE THIN FILM TRANSISTOR - A thin film transistor (TFT) includes a substrate, a semiconductor layer disposed on the substrate and including source and drain regions, each having a first metal catalyst crystallization region and a second metal catalyst crystallization region, and a channel region having the second metal catalyst crystallization region, a gate electrode disposed in a position corresponding to the channel region of the semiconductor layer, a gate insulating layer interposed between the semiconductor layer and the gate electrode to electrically insulate the semiconductor layer from the gate electrode, and source and drain electrodes electrically insulated from the gate electrode and electrically connected to the source and drain regions, respectively. An OLED display device includes the thin film transistor and a first electrode, an organic layer, and a second electrode electrically connected to the source and drain electrodes.07-01-2010
20100187538THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME - A thin film transistor array panel according to the present invention includes: an insulation substrate having a display area and a peripheral area; a plurality of thin film transistors disposed in the display area; a plurality of gate lines connected to the thin film transistors; a plurality of data lines connected to the thin film transistors; a driving unit disposed in the peripheral area of the insulation substrate, and controlling the thin film transistor; a plurality of signal lines connecting between the driving unit and the gate lines or the data lines; and a dummy pattern overlapping the signal line and made of a transparent conductive material.07-29-2010
20100258811Semiconductor Device and Method of Manufacturing the Same - In manufacturing a semiconductor device, static electricity is generated while contact holes are formed in an interlayer insulating film by dry etching. Damage to a pixel region or a driving circuit region due to travel of the static electricity generated is prevented. Gate signal lines are spaced apart from each other above a crystalline semiconductor film. Therefore a first protective circuit is not electrically connected when contact holes are opened in an interlayer insulating film. The static electricity generated during dry etching for opening the contact holes moves from the gate signal line, damages a gate insulating film, passes the crystalline semiconductor film, and again damages the gate insulating film before it reaches the gate signal line. As the static electricity generated during the dry etching damages the first protective circuit, the energy of the static electricity is reduced until it loses the capacity of damaging a driving circuit TFT. The driving circuit TFT is thus prevented from suffering electrostatic discharge damage.10-14-2010
20110108845DISPLAY DEVICE - In a display device, the display device includes a substrate, a red color filter layer, a green color filter layer, and a blue color filter layer. The substrate has red, green and blue sub-pixel regions. The red color filter layer is located on the red, green and blue sub-pixel regions, and has a first opening formed in the green sub-pixel region and a second opening formed in the blue sub-pixel region. The green color filter layer is located in the first opening. The blue color filter layer is located in the second opening. Since the red color filter layer is used as an interlayer insulating layer, there is no need to perform a separate process to form a color filter layer and a process for an interlayer insulating layer can be omitted. Thus, it can simplify a process.05-12-2011
20100224882THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE HAVING THE SAME - A thin film transistor, a method of fabricating the same, and an organic light emitting diode display device having the same, the thin film transistor including: a substrate; a silicon layer formed on the substrate; a diffusion layer formed on the silicon layer; a semiconductor layer that is crystallized using a metal catalyst, formed on the diffusion layer; a gate electrode disposed on the diffusion layer, facing a channel region of the semiconductor layer; a gate insulating layer disposed between the gate electrode and the semiconductor layer; and source and drain electrodes electrically connected to source and drain regions of the semiconductor layer.09-09-2010
20100224883THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE SAME - A thin film transistor (TFT) and an organic light emitting diode (OLED) display device. The TFT and the OLED display device include a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate electrode insulated from the semiconductor layer, a gate insulating layer insulating the semiconductor layer from the gate electrode, and source and drain electrodes insulated from the gate electrode and partially connected to the semiconductor layer, wherein the semiconductor layer is formed from a polycrystalline silicon layer crystallized by a metal catalyst and the metal catalyst is removed by gettering using an etchant. In addition, the OLED display device includes an insulating layer disposed on the entire surface of the substrate, a first electrode disposed on the insulating layer and electrically connected to one of the source and drain electrodes, an organic layer, and a second electrode.09-09-2010
20100276696Semiconductor Device and Method of Fabricating the Same - An active matrix display device having a pixel structure in which pixel electrodes, gate wirings and source wirings are suitably arranged in the pixel portions to realize a high numerical aperture without increasing the number of masks or the number of steps. The device comprises a gate electrode and a source wiring on an insulating surface, a first insulating layer on the gate electrode and on the source wiring, a semiconductor layer on the first insulating film, a second insulating layer on the semiconductor film, a gate wiring connected to the gate electrode on the second insulating layer, a connection electrode for connecting the source wiring and the semiconductor layer together, and a pixel electrode connected to the semiconductor layer.11-04-2010
20100001287Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the same - A thin film transistor (TFT), including a crystalline semiconductor pattern on a substrate, a gate insulating layer on the crystalline semiconductor pattern, the gate insulating layer having two first source/drain contact holes and a semiconductor pattern access hole therein, a gate electrode on the gate insulating layer, the gate electrode being between the two first source/drain contact holes, an interlayer insulating layer covering the gate electrode, the interlayer insulating layer having two second source/drain contact holes therein, and source and drain electrodes on the interlayer insulating layer, each of the source and drain electrodes being insulated from the gate electrode, and having a portion connected to the crystalline semiconductor pattern through the first and second source/drain contact holes.01-07-2010
20100213466PHOTOSENSORS INCLUDING SEMICONDUCTOR-ON-INSULATOR STRUCTURE - Photosensor based on SOI technology and display devices comprising the same. The photosensor can be a photodiode or a phototransistor, or a combination thereof when incorporated in a device. The photosensor exhibits a higher photoresponse than a traditional photosensor based on amorphous silicon film or polysilicon thin film technology. The present invention is useful, e.g., in making multifunctional display devices having photosensing function integrated therein.08-26-2010
20100148182THIN FLIM TRANSISTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF - A thin film transistor (TFT) substrate is provided in which a sufficiently large contact area between conductive materials is provided in a contact portion and a method of fabricating the TFT substrate. The TFT substrate includes a gate interconnection line formed on an insulating substrate, a gate insulating layer covering the gate interconnection line, a semiconductor layer arranged on the gate insulating layer, a data interconnection line including a data line, a source electrode and a drain electrode formed on the semiconductor layer, a first passivation layer formed on the data interconnection line and exposing the drain electrode, a second passivation layer formed on the first passivation film and a pixel electrode electrically connected to the drain electrode. An outer sidewall of the second passivation layer is positioned inside an outer sidewall of the first passivation layer.06-17-2010
20100001284METHOD OF MANUFACTURING TRANSISTOR AND METHOD OF MANUFACTURING ORGANIC ELECTROLUMINESCENCE DISPLAY USING THE SAME - A method of manufacturing a transistor and a method of manufacturing an organic electroluminescence display are disclosed. When an amorphous silicon layer is crystallized, a silicon oxide layer formed on a polysilicon layer is subsequently patterned. Impurity ions are implanted into first and second regions of the amorphous silicon layer to form first and second doped regions. The silicon oxide layer is patterned so that the silicon oxide layer may be removed from an ohmic contact region of the polysilicon layer, and covers only a channel region of the polysilicon layer.01-07-2010
20100237355THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THIN FILM TRANSISTOR, AND DISPLAY DEVICE - A thin film transistor with a large on-current and a reduced off-current is provided with high fabrication efficiency.09-23-2010
20100001285Semiconductor Structure and Method for Manufacturing the Same - A semiconductor structure and a method for manufacturing the same are provided. Compared to conventional structures of thin film transistors, the structure of the present invention uses a patterned first metal layer as a data line, and a patterned second metal layer as a gate line. In a thin film transistor, a gate is also located in the patterned first metal layer, and is electrically connected to the gate line located in the patterned second metal layer through a contact hole. A source and a drain of the thin film transistor are electrically connected to the data line through a contact hole. The structure of the present invention increases a storage capacitance and an aperture ratio.01-07-2010
20110006306LIGHT EMITTING DEVICE - A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.01-13-2011
20100127272THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - A thin film transistor array panel according to the present invention includes: a gate line formed on a substrate; a data line insulated from and intersecting the gate line; a thin film transistor connected to the gate line and the data line; a light blocking layer formed on the thin film transistor and having a first transmitting window; a reflection layer formed on the light blocking layer and a second transmitting window overlapping the first transmitting window; a color filter formed in the first transmitting window and the second transmitting window and on the reflection layer; and a pixel electrode formed on the color filter and overlapping the second transmitting window, wherein the reflection layer includes protrusions and depressions corresponding to a portion of the pixel area defined by the gate line and data line.05-27-2010
20090032819Array substrate for liquid crystal display device and method of fabricating the same - An array substrate for a liquid crystal display device, including: a substrate; a gate line on the substrate; a data line crossing the gate line to define a pixel region; a thin film transistor connected to the gate line and the data line, the thin film transistor including a gate electrode connected to the gate line, a semiconductor layer whose boundary is within the gate electrode, a source electrode connected to the data line and a drain electrode spaced apart from the source electrode; a passivation pattern covering the data line and the thin film transistor; and a pixel electrode extending from the drain electrode.02-05-2009
20090309103DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF, AND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A display device includes source/drain electrodes on a substrate, a pixel electrode, an insulating partition wall layer, a channel-region semiconductor layer. The source/drain electrodes and the pixel electrode are formed on the substrate and in contact with each other. The insulating partition wall layer is formed on the substrate and provided with a first opening extending to between the source electrode and the drain electrode and a second opening formed on the pixel electrode and extending to the pixel electrode. The channel-region semiconductor layer is formed on the bottom of the first opening. The insulating film is formed on the partition wall layer so as to cover the first opening including the channel-region semiconductor layer. The oriented film covers the first opening from above the insulating film and the second opening from the pixel electrode.12-17-2009
20090309102Array substrate for liquid crystal display device and method of fabricating the same - An array substrate for a liquid crystal display device includes: a gate line and a gate electrode on a substrate, the gate electrode connected to the gate line; a gate insulating layer on the gate line and the gate electrode, the gate insulating layer including an organic insulating material such that a radical of carbon chain has a composition ratio of about 8% to about 11% by weight; a semiconductor layer on the gate insulating layer over the gate electrode; a data line crossing the gate line to define a pixel region; source and drain electrodes on the semiconductor layer, the source electrode connected to the data line and the drain electrode spaced apart from the source electrode; a passivation layer on the data line, the source electrode and the drain electrode, the passivation layer having a drain contact hole exposing the drain electrode; and a pixel electrode on the passivation layer, the pixel electrode connected to the drain electrode through the drain contact hole12-17-2009
20090189164UNIFORM LARGE-GRAINED AND GRAIN BOUNDARY LOCATION MANIPULATED POLYCRYSTALLINE THIN FILM SEMICONDUCTORS FORMED USING SEQUENTIAL LATERAL SOLIDIFICATION AND DEVICES FORMED THEREON - Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed. In one preferred arrangement, a method includes the steps of generating a sequence of excimer laser pulses, controllably modulating each excimer laser pulse in the sequence to a predetermined fluence, homoginizing each modulated laser pulse in the sequence in a predetermined plane, masking portions of each homoginized fluence controlled laser pulse in the sequence with a two dimensional pattern of slits to generate a sequence of fluence controlled pulses of line patterned beamlets, each slit in the pattern of slits being sufficiently narrow to prevent inducement of significant nucleation in region of a silicon thin film sample irradiated by a beamlet corresponding to the slit, irradiating an amorphous silicon thin film sample with the sequence of fluence controlled slit patterned beamlets to effect melting of portions thereof corresponding to each fluence controlled patterned beamlet pulse in the sequence of pulses of patterned beamlets, and controllably sequentially translating a relative position of the sample with respect to each of the fluence controlled pulse of slit patterned beamlets to thereby process the amorphous silicon thin film sample into a single or polycrystalline silicon thin film.07-30-2009
20090184326DISPLAY SUBSTRATE, METHOD FOR MANUFACTURING THE DISPLAY SUBSTRATE AND DISPLAY APPARATUS HAVING THE DISPLAY SUBSTRATE - A display substrate includes a base substrate, a gate line, a gate insulation layer, a data line, a thin-film transistor (TFT) and a pixel electrode. The gate line is extended in a first direction on the base substrate. The gate insulation layer is formed on the base substrate to cover the gate line. The data line is extended in a second direction and intersects the gate line at an intersecting portion. At the intersecting portion, the data line is separated from the gate line by an air gap. In another embodiment, the data line also includes at least one etching hole extending to the air gap. The TFT is electrically connected to the data and the gate lines. The pixel electrode is electrically connected to the TFT.07-23-2009
20090114922SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME, LIQUID CRYSTAL TELEVISION, AND EL TELEVISION - An object of the present invention is to provide a method for manufacturing a semiconductor device having a semiconductor element capable of reducing a cost and improving a throughput with a minute structure, and further, a method for manufacturing a liquid crystal television and an EL television. According to one feature of the invention, a method for manufacturing a semiconductor device comprises the steps of: forming a light absorption layer over a substrate, forming a first region over the light absorption layer by using a solution, generating heat by irradiating the light absorption layer with laser light, and forming a first film pattern by heating the first region with the heat.05-07-2009
20090114921THIN FILM TRANSISTOR, AND DISPLAY DEVICE HAVING THE THIN FILM TRANSISTOR - The thin film transistor includes a gate insulating film formed over a gate electrode; a microcrystalline semiconductor film including an impurity element which serves as a donor, formed over the gate insulating film; a pair of buffer layers formed over the microcrystalline semiconductor film; a pair of semiconductor films to which an impurity element imparting one conductivity type is added, formed over the pair of buffer layers; and wirings formed over the pair of semiconductor films to which an impurity element imparting one conductivity type is added. The concentration of the impurity element which serves as a donor in the microcrystalline semiconductor film is decreased from the gate insulating film side toward the buffer layers, and the buffer layers do not include the impurity element which serves as a donor at a higher concentration than the detection limit of SIMS.05-07-2009
20090039355Display Device - A current pixel circuit of a display device includes a switching transistor which may be turned on in response to the current selection signal to transfer a data signal, a driving transistor for outputting a current corresponding to the data signal, and first and second transistors being turned on in response to the previous selection signal. In the display device, the gate electrodes of the switching transistor of a previous pixel and the first and second transistors of the current pixel are coupled to one scan line for transferring the previous selection signal. Accordingly, the transistors are arranged in the order of the switching transistor of the previous pixel and the first and second transistors of the current pixel on the scan line at an area between two adjacent data lines.02-12-2009
20090072237METHOD FOR MANUFACTURING THIN FILM TRANSISTOR AND DISPLAY DEVICE INCLUDING THE THIN FILM TRANSISTOR - To provide a method for manufacturing a thin film transistor with excellent electric characteristics and high reliability and a display device including the thin film transistor. A gate insulating film is formed over a gate electrode, crystal nuclei is formed over the gate insulating film using fluorosilane and silane, and crystal growth is generated using the crystal nuclei as nuclei to form a microcrystalline semiconductor film, so that crystallinity at an interface between the gate insulating film and the microcrystalline semiconductor film is improved. Next, a thin film transistor is manufactured using the microcrystalline semiconductor film having crystallinity improved at the interface between the gate insulating film and the microcrystalline semiconductor film as a channel formation region.03-19-2009
20090072238INSULATED GATE FIELD EFFECT SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME - An LDD structure is manufactured to have a desired aspect ratio of the height to the width of a gate electrode. The gate electrode is first deposited on a semiconductor substrate followed by ion implantation with the gate electrode as a mask to form a pair of impurity regions. The gate electrode is then anodic oxidized to form an oxide film enclosing the electrode. With the oxide film as a mask, highly doped regions are formed by ion implantation in order to define lightly doped regions between the highly doped regions and the channel region located therebetween.03-19-2009
20080251792Luminescent device and process of manufacturing the same - In the case where a material containing an alkaline metal or an alkaline-earth metal in a cathode, an anode, a buffer layer, or an organic compound layer is used, there is a fear of the diffusion of an impurity ion (representatively, alkaline metal ion or alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT.10-16-2008
20080246036Semiconductor Device, Television Set, and Method for Manufacturing The Same - An object of the invention is to provide a method for manufacturing a substrate having a film pattern such as an insulating film, a semiconductor film, or a conductive film with an easy process, and further, a semiconductor device and a television set having a high throughput or a high yield at low cost and a manufacturing method thereof. One feature of the invention is that a first film pattern is formed by a droplet discharge method, a photosensitive material is discharged or applied to the first film pattern, a mask pattern is formed by irradiating a region where the first film pattern and the photosensitive material are overlapped with a laser beam and by developing, and a second film pattern having a desired shape is formed by etching the first film pattern using the mask pattern as a mask.10-09-2008
20110108849TFT-LCD PIXEL UNIT AND METHOD FOR MANUFACTURING THE SAME - A thin film transistor liquid crystal display (TFT-LCD) pixel unit and a method for manufacturing the same. The pixel unit comprises a gate line and a gate electrode formed on a substrate and a first gate insulating layer, an active layer, and a doped layer sequentially that are formed on the gate line and the gate electrode. An intercepting trench is formed on the gate line to cut off the doped layer and the active layer on the gate line. A second insulating layer covers the intercepting trench and the substrate where the gate line and the gate electrode are not formed. A pixel electrode is formed on the second insulating layer and is integrated with the second source/drain electrode.05-12-2011
20110024764SEMICONDUCTOR DEVICE, METHOD FOR PRODUCING THE SAME, AND DISPLAY DEVICE - The present invention provides a semiconductor device which can reduce I02-03-2011
20100133545THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME - A thin film transistor includes a multi-coaxial silicon nanowire unit including a plurality of coaxial silicon nanowires on a substrate, the multi-coaxial silicon nanowire unit including a central portion and end portions of the central portion; a gate electrode on the central portion; and a source electrode and a drain electrode on the respective end portions, respectively, so as to electrically connect to the multi-coaxial silicon nanowire unit.06-03-2010
20110017999Array substrate and method of fabricating the same - An array substrate includes first and second gate electrodes on a substrate; a gate insulating layer on the first and second gate electrodes; first and second active layers on the gate insulating layer; an interlayer insulating layer on the first and second active layers; first to fourth ohmic contact layers respectively contacting both sides of the first active layer and both sides of the second active layer; first and second source electrodes and first and second drain electrodes respectively on the first, third, second and fourth ohmic contact layers; a data line connected to the first source electrode; a first passivation layer connected to the first gate electrode; a power line; one end and the other end of a connection electrode respectively connected to the first drain electrode and the second gate electrode; a second passivation layer; and a pixel electrode-connected to the second drain electrode.01-27-2011
20110108848Organic Light Emitting Display Device and Manufacturing Method Thereof - An organic light emitting display having an active layer of a thin film transistor formed on a substrate, a first conductive layer formed at an edge of the active layer, a first insulation layer formed on the substrate and the first conductive layer, a second conductive layer corresponding to a central area of the active layer formed on the first insulation layer, a fanout lower electrode separated a predetermined distance from the second conductive layer, a pixel electrode, a third conductive layer formed on the second conductive layer, a fanout upper electrode formed on the fanout lower electrode, a second insulation layer formed on the third conductive layer, the fanout upper electrode, and the pixel electrode, and source and drain electrodes contacting the pixel electrode and formed on the second insulation layer.05-12-2011
20110024763DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A display device which has thin film transistors, wherein a semiconductor layer includes a first layer, second layers and third layers, the first layer has a channel region, the second layers are an impurity layer, the third layers are a low-concentration impurity layer, the second layers have connection portions connected with an electrodes, the third layers are formed to annularly surround the second layers, a channel-region-side edge portion out of edge portions of the third layer is in contact with the first layer, the edge portions of the third layer but the channel-region-side edge portion are in contact with an interlayer insulation film, the second layers have a first region where the second layer overlaps with a gate electrode and a second region where the second layer does not overlap with the gate electrode, and the connection portion is in the second region.02-03-2011
20090065784DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A display device including a thin film transistor with high electric characteristics and high reliability, and a method for manufacturing the display device in high yield are proposed. In a display device including a channel stop thin film transistor with an inverted-staggered structure, the channel stop thin film transistor with the inverted-staggered structure includes a microcrystalline semiconductor film including a channel formation region. An impurity region including an impurity element imparting one conductivity type is formed as selected in a region in the channel formation region of the microcrystalline semiconductor film which does not overlap with a source electrode or a drain electrode. In the channel formation region, a non-doped region, to which the impurity element imparting one conductivity type is not added, is formed between the impurity region, which is a doped region to which the impurity element is added, and the source region or the drain region.03-12-2009
20090065782FIELD SHIELD DIELECTRIC AS A MASK DURING SEMICONDUCTOR INK JET PRINTING - A display device and method for fabricating includes patterning a field shield dielectric layer to expose conductors and form a cavity over the conductors. InkJet printing a semiconductor material fills a portion of the cavity in contact with the conductors. An insulation material is deposited on the semiconductor material. A pixel pad is formed over the insulation material and the field shield dielectric layer. A pixel is formed which includes a thin film transistor with an ink jet printed semiconductor layer.03-12-2009
20110108846ARRAY SUBSTRATE FOR DISPLAY DEVICE - Disclosed is array substrate including a pixel region having a switching region, a driving region and a storage region. A switching TFT in the switching region includes a first gate electrode, a first gate insulating layer, a switching active layer on the first gate insulating layer, a switching source electrode on a first switching ohmic contact layer, and a switching drain electrode on a second switching ohmic contact layer; a driving TFT in the driving region is connected to the switching TFT and includes a first gate electrode, a second gate insulating layer, a driving active layer on the second gate insulating layer, a driving source electrode on a first driving ohmic contact layer, and a driving drain electrode on a second driving ohmic contact layer; wherein at least one of the switching and driving TFTs further includes a second gate electrode over the switching or driving active layers.05-12-2011
20110057195POLY-SI THIN FILM TRANSISTOR AND ORGANIC LIGHT-EMITTING DISPLAY HAVING THE SAME - A thin film transistor comprises an Si-based channel having a nonlinear electron-moving path, a source and a drain disposed at both sides of the channel, a gate disposed above the channel, an insulator interposed between the channel and the gate, and a substrate supporting the channel and the source and the drain disposed at either side of the channel respectively.03-10-2011
20110114964SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF - To provide a liquid crystal display device having high quality display by obtaining a high aperture ratio while securing a sufficient storage capacitor (Cs), and at the same time, by dispersing a load (a pixel writing-in electric current) of a capacitor wiring in a timely manner to effectively reduce the load. A scanning line is formed on a different layer from a gate electrode and the capacitor wiring is arranged so as to be parallel with a signal line. Each pixel is connected to the individually independent capacitor wiring via a dielectric. Therefore, variations in the electric potential of the capacitor wiring caused by a writing-in electric current of a neighboring pixel can be avoided, whereby obtaining satisfactory display images.05-19-2011
20110018000DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - Disclosed is a method of fabricating a display device that includes forming a buffer layer; forming a gate electrode of extrinsic polycrystalline silicon, a gate insulating layer, an active layer of intrinsic polycrystalline silicon and an auxiliary active layer of intrinsic amorphous silicon on the buffer layer; forming an ohmic contact layer of extrinsic amorphous silicon and contacting the auxiliary active layer, source and drain electrodes and a data line; patterning a first passivation layer, an insulating interlayer and the gate insulating layer to form a gate contact hole exposing the gate electrode; forming a gate line on the first passivation layer, made of a metal material, and contacting the gate electrode through the gate contact hole; forming a second passivation layer on the gate line; patterning the first and second passivation layers to form a drain contact hole exposing the drain electrode; and forming a pixel electrode on the second passivation layer in the pixel region and contacting the drain electrode through the drain contact hole.01-27-2011
20110241015PIXEL STRUCTURE - A pixel structure including a scan line, a data line intersecting the scan line, a first gate, a second gate, a third gate, a semiconductor layer, a source, a first drain, a second drain, a first pixel electrode, and a second pixel electrode is provided. The dataline and the scan line are interlaced disposed. The semiconductor layer is disposed on the scan line to define the first gate and the second gate. The source is directly connected to the data line and located between the first gate and the second gate. The first gate is located between the first drain and the source. The second gate is located between the second drain and the source. The third gate is electrically connected to the scan line. The first pixel electrode and the second pixel electrode are respectively electrically connected to the first drain and the second drain.10-06-2011
20130153914ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display device includes a thin film transistor on a substrate, a first wiring and a second wiring overlapping each other, the first and second wirings being at different heights relative to the substrate and being connected to the thin film transistor, and a plurality of insulating layers between the first wiring and the second wiring.06-20-2013
20130153915ORGANIC LIGHT EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE ORGANIC LIGHT EMITTING DISPLAY APPARATUS - An organic light-emitting display apparatus includes a substrate including a plurality of red, green, and blue sub-pixel regions, a pixel electrode in each of the plurality of the red, green, and blue sub-pixel regions on the substrate, a Distributed Bragg Reflector (DBR) layer between the substrate and the pixel electrodes, a high-refractive index layer between the substrate and the DBR layer in the blue sub-pixel region, the high-refractive index layer having a smaller area than an area of a corresponding pixel electrode in the blue sub-pixel region, an intermediate layer including an emissive layer on the pixel electrode, and an opposite electrode on the intermediate layer.06-20-2013
20110114962ARRAY SUBSTRATE FOR DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - An array substrate for a display device includes a gate electrode on a substrate; a gate insulating layer on the gate electrode and having the same plane area and the same plane shape as the gate electrode; an active layer on the gate insulating layer and exposing an edge of the gate insulating layer; an interlayer insulating layer on the active layer and including first and second active contact holes, the first and second active contact holes respectively exposing both sides of the active layers; first and second ohmic contact layers contacting the active layer through the first and second active contact holes, respectively; a source electrode on the first ohmic contact layer; a drain electrode on the second ohmic contact layer; a data line on the interlayer insulating layer and connected to the source electrode; a first passivation layer on the source electrode, the drain electrode and the data line, the first passivation layer, the interlayer insulating layer and the gate insulating layer have a first gate contact hole exposing a portion of the gate electrode; a gate line on the first passivation layer and contacting the gate electrode through the first gate contact hole, the gate line crossing the data line; a second passivation layer on the gate line and having a drain contact hole exposing the drain electrode; and a pixel electrode on the second passivation layer and contacting the drain electrode through the contact hole.05-19-2011
20100171123DISPLAY APPARATUS AND MANUFACTURING METHOD THEREOF - A display apparatus includes a gate electrode, a first insulating layer pattern formed over the gate electrode, a second insulating layer pattern formed over the first insulating layer pattern, exposing a portion of the first insulating layer, a semiconductor film pattern formed over the second insulating layer pattern and over the first insulating layer pattern, an impurity-doped semiconductor film pattern formed on the semiconductor film pattern, wherein the impurity-doped semiconductor film pattern contacts the top surface of the semiconductor film pattern and exposes a portion of the semiconductor film pattern formed over the gate electrode, a source electrode and a drain electrode each formed over a portion of the impurity doped semiconductor film pattern, a protection film pattern formed over the source electrode and the drain electrode in a TFT area, the protection film pattern having a contact hole over the drain electrode, a pixel electrode pattern formed on the protection film pattern and_electrically connected to the drain electrode.07-08-2010
20110079789DISPLAY PANEL - A display panel includes a plurality of pads, a plurality of first contacts connected to the pads, a plurality of second contacts provided so as to be opposed to the plurality of first contacts, a polysilicon layer configured to form a plurality of polysilicon films to connect the plurality of first contacts and second contacts, and a gate metal layer. The gate metal layer forms at least one gate metal. The gate metal layer traverses the plurality of polysilicon films so as to form a plurality of transistors. The plurality of transistors are arranged in a zigzag pattern for each transistor set. A width of a portion of each of the polysilicon films, the portion forming a corresponding one of the transistors, is larger than a width of another portion of the polysilicon films. The other portion is connected to a corresponding one of the first contacts and second contacts.04-07-2011
20100244037THIN FILM TRANSISTOR, ITS MANUFACTURING METHOD, AND LIQUID CRYSTAL DISPLAY PANEL AND ELECTRONIC DEVICE USING SAME - A thin film transistor (TFT) is provided which is capable of reducing leakage currents in a polycrystalline silicon TFT without causing an increase in manufacturing processes. Source/drain regions of an activated layer of the TFT to be formed in a circuit region and pixel region formed on a glass substrate of a liquid crystal display panel for a mobile phone is formed so that its boron impurity falls within a range of 2.5×1009-30-2010
20100219415TRANSISTOR, FABRICATING METHOD THEREOF AND FLAT PANEL DISPLAY THEREWITH - A transistor includes a substrate, an active region including a source region, a channel region, and a drain region which are crystallized using an SGS crystallization method and are formed on the substrate so that a grain size of a first annealed portion and a second annealed portion are different from each other, a gate insulating layer formed on the active region, and a gate electrode formed on the gate insulating layer.09-02-2010
20110241014Organic light emitting display device - An organic light emitting display device includes a substrate having transmitting and pixel regions, the pixel regions being separated by the transmitting regions, at least one thin film transistor in each of the pixel regions, a plurality of transparent first conductive lines electrically connected to the thin film transistors and extending across the transmitting regions, a plurality of second conductive lines electrically connected to the thin film transistors and extending across the transmitting regions, a passivation layer, a plurality of pixel electrodes on the passivation layer, the pixel electrodes being separated and positioned to correspond to respective pixel regions, each of the pixel electrodes being electrically connected to and overlapping a corresponding thin film transistor, an opposite electrode overlapping the pixel electrodes in the transmitting and pixel regions, and an organic emission layer between the pixel electrodes and the opposite electrode.10-06-2011
20110241013Thin film transistor, method of producing the same and flexible display device including the thin film transistor - A thin film transistor includes a polymer substrate having a weight loss of 0.95% or less at a temperature in the range of 400 to 600° C. A method of producing the thin film transistor includes forming a polymer substrate by forming a polymer layer and annealing the polymer layer at a temperature in the range of 150 to 550° C. A flexible display device includes the thin film transistor.10-06-2011
20100078647THIN FILM TRANSISTOR SUBSTRATE AND ORGANIC LIGHT EMITTING DISPLAY HAVING THE SAME - In an organic light emitting display, a switching transistor includes an active pattern having a crystal structure grown at an angle of 0°±10° relative to a current flow direction, and a driving transistor includes an active pattern having a crystal structure grown at an angle of 90°±10° relative to a current flow direction. As a result, the driving transistor more precisely controls intensity of supply voltage applied to an organic light emitting layer.04-01-2010
20100012944THIN FILM TRANSISTOR SUBSTRATE AND THIN FILM TRANSISTOR OF DISPLAY PANEL AND METHOD OF MAKING THE SAME - A thin film transistor (TFT) formed on a transparent substrate is provided. The thin film transistor includes a patterned semiconductor layer, a gate insulating layer disposed on the patterned semiconductor layer, a gate electrode disposed on the gate insulating layer, and a patterned light-absorbing layer. The patterned semiconductor layer includes a channel region, and a source region and a drain region disposed on two opposite sides of the channel region in the pattern semiconductor layer. The patterned light-absorbing layer is disposed between the transparent substrate and the patterned semiconductor layer.01-21-2010
20100187537Thin Film Transistor Array Substrate and Method for Manufacturing the Same - A thin film transistor array structure and a method for manufacturing the same are provided. The thin film transistor array structure comprises a substrate, including a transition area and a pad area. A patterned first metal layer is formed on the substrate, wherein the patterned first metal layer includes a data connecting line disposed in the transition area, and a data pad and a gate pad disposed in the pad area. A patterned first insulation layer is formed on the patterned first metal layer. The patterned first insulation layer at least defines a first opening on the gate pad, a second opening on the data pad, and a third opening in the transition area, so as to simplify following processes to increase the yield.07-29-2010
20100038651SEMICONDUCTOR DEVICE INCLUDING SEMICONDUCTOR CIRCUIT MADE FROM SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREOF - In the present invention, a semiconductor film is formed through a sputtering method, and then, the semiconductor film is crystallized. After the crystallization, a patterning step is carried out to form an active layer with a desired shape. The present invention is also characterized by forming a semiconductor film through a sputtering method, subsequently forming an insulating film. Next, the semiconductor film is crystallized through the insulating film, so that a crystalline semiconductor film is formed. According this structure, it is possible to obtain a thin film transistor with a good electronic property and a high reliability in a safe processing environment.02-18-2010
20090218575Display device and manufacturing method thereof - Provided is a display device including a p-type thin film transistor formed on a substrate, in which the p-type thin film transistor includes: a gate electrode; a drain electrode; a source electrode; an insulating film; a semiconductor layer formed on a top surface of the gate electrode through the insulating film; and diffusion layers of p-type impurities formed at each of an interface between the drain electrode and the semiconductor layer and an interface between the source electrode and the semiconductor layer, the drain electrode and the source electrode being formed so as to be opposed to each other with a clearance formed therebetween on a top surface of the semiconductor layer.09-03-2009
20090218574Display device and manufacturing method therefor - A display device includes a thin film transistor above a substrate, in which the thin film transistor is configured to include a gate electrode, a gate insulating film formed to cover the gate electrode, a semiconductor layer formed to stride over the gate electrode on the gate insulating film, an inter-layer insulating film formed to cover the semiconductor layer, and a pair of electrodes formed to be connected to each of sides of the semiconductor layer interposing the gate electrode therebetween through contact holes formed through the inter-layer insulating film, high concentration impurity layers are formed at each connecting portion of the electrodes of the semiconductor layer, and an annular low-concentration impurity layer is formed to surround at least one of the high concentration impurity layers.09-03-2009
20090218576THIN-FILM TRANSISTOR AND DISPLAY DEVICE - A thin-film transistor includes a pair of impurity semiconductor layers in which an impurity element imparting one conductivity type is added to form a source and drain regions so as to be overlapped at least partly with a gate electrode with a gate insulating layer interposed between the gate electrode and the impurity semiconductor layers; a pair of conductive layers which is overlapped over the gate insulating layers at least partly with the gate electrode and the impurity semiconductor layers, and is disposed with a space therebetween in a channel length direction; and an amorphous semiconductor layer which is in contact with the gate insulating layer and the pair of conductive layers and is extended between the pair of conductive layers.09-03-2009
20090039354TFT ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF - Provided are a thin film transistor (TFT) array substrate and the method manufacturing thereof. The TFT array substrate comprising: a substrate, and a gate line and a data line formed on the substrate, the gate line and the data line being separated by a gate insulating layer therebetween and intersecting to define a pixel unit, the pixel unit at least including a TFT device and a pixel electrode. The data line and a source electrode of the thin film transistor device are formed as an integral structure, and an active layer is formed below both the data line and the source electrode of the thin film transistor device.02-12-2009
20090039353ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display device includes a substrate; a gate electrode disposed on the substrate, the gate electrode including a first portion of a metal oxide layer and a metal layer; a pixel electrode disposed on the substrate so as to be insulated from the gate electrode, the pixel electrode including a second portion of the metal oxide layer; a gate insulating layer disposed on the substrate to cover the gate electrode; a semiconductor layer disposed on the gate insulating layer, the semiconductor layer including a channel region corresponding to the gate electrode, and first and second regions disposed outside the channel region; a first electrode connected to the first region of the semiconductor layer; a second electrode connected to the second region of the semiconductor layer and the pixel electrode; an ohmic contact layer disposed between the first region of the semiconductor layer and the first electrode and between the second region of the semiconductor layer and the second electrode; a pixel defining layer disposed on the substrate to cover the first electrode, the second electrode, the semiconductor layer, and the pixel electrode, the pixel defining layer including an opening through which the pixel electrode is partially exposed; an organic light-emitting layer disposed on the pixel electrode exposed through the opening; and an opposite electrode covering the organic light-emitting layer.02-12-2009
20120146042MICRO-CRYSTALLINE THIN FILM TRANSISTOR, DISPLAY DEVICE INCLUDING THE SAME AND MANUFACTURING METHOD THEREOF - A display device includes: a substrate; gate and data lines crossing each other on the substrate to define a pixel region; a thin film transistor that is connected to the gate and data lines, and includes a gate electrode, an active layer made of micro-crystalline silicon, and source and drain electrodes which are sequentially formed; a passivation layer on the thin film transistor; and a first electrode in the pixel region on the passivation layer and connected to the drain electrode, wherein a first overlap width between the drain electrode and the gate electrode is less than a second overlap width between the source electrode and the gate electrode.06-14-2012
20100038650DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A display device includes first and second substrates, and first and second alignment keys. The first and second substrates have first and second display regions and first and second peripheral regions, respectively. The first alignment key is disposed in the first peripheral region of the first substrate. The first alignment key includes a first pattern and a second pattern. The second alignment key is disposed in the second peripheral region of the second substrate such that the second alignment key faces the first alignment key. As a result, first alignment key may be formed through a procedure of forming the pixel electrode. Therefore, there exists no deviation between the first alignment key and the pixel electrode and the first alignment key may be easily detected because of the first pattern that is opaque, so that misalignment is prevented.02-18-2010
20100012946TFT-LCD ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF - A liquid crystal display (LCD) array substrate and a manufacturing method thereof are provided. The manufacturing method comprises depositing a semiconductor layer, a doped semiconductor layer and a metal film for source and drain electrodes sequentially on a base substrate and then forming a data line, a source electrode, a drain electrode and a thin film transistor (TFT) channel region by a first patterning process; depositing a first insulating film and a gate metal film sequentially and then forming a gate line and a gate electrode by a second patterning process and forming an insulating layer via hole in the first insulating layer above the drain electrode; depositing a transparent conductive film and then forming a pixel electrode by a third patterning process; and forming a second insulating layer.01-21-2010
20100038647THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - A thin film transistor substrate according to one or more embodiments of the present invention includes a gate line formed on a substrate, a data line that is insulated from and intersects the gate line, a thin film transistor connected to the gate line and the data line, a barrier rub formed on the thin film transistor and partitioning a plurality of first openings, a reflecting electrode formed in each of the first openings, and a pixel electrode formed on the reflecting electrode and that is electrically connected to the thin film transistor.02-18-2010
20100038648THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME - A thin film transistor array panel including a substrate; a display area signal line; a display area thin film transistor; a peripheral area signal line; a black matrix disposed on the display area signal line, the display area thin film transistor, and the peripheral area signal line, the black matrix including a first and a second contact holes exposing the peripheral area signal line; a protrusion member disposed on the peripheral area signal line, the protrusion member overlapping the peripheral area signal line; a transparent connector disposed on the black matrix and within the peripheral area, wherein the transparent connector contacts the peripheral area signal line through at least one of the first and the second contact holes and includes a protrusion within at least one of the first and the second contact holes which corresponds to the protrusion member; and a pixel electrode.02-18-2010
20100065851SEMICONDUCTOR DEVICE, AND ITS MANUFACTURING METHOD - A semiconductor device 03-18-2010
20100065852SYSTEM FOR DISPLAYING IMAGES AND FABRICATING METHOD THEREOF - A system for displaying images and fabricating method thereof are provided. The system includes a thin film transistor substrate including a substrate having a display area and a pad area. The thin film transistor substrate further includes a conductive line disposed on the substrate in the display area. The conductive line includes a lower metal line, an upper metal line and a middle metal line therebetween. The width of the middle metal line is narrower than that of the upper metal line.03-18-2010
20100065850ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - An array substrate includes a substrate including a display area and a peripheral area surrounding the display area, a transistor layer formed in the display area of the substrate and electrically connected to a gate line and a data line, a color filter formed in a pixel region on the transistor layer, a first light blocking member disposed between adjacent color filters, a first transparent member formed on the first light blocking member to cover the first light blocking member, a first color pattern formed in a peripheral area of the substrate and including substantially the same material as the color filter, and a second transparent member including substantially the same material as the first transparent member. The second transparent member is disposed in the peripheral area of the substrate to cover the first color pattern.03-18-2010
20090026463ARRAY SUBSTRATE FOR A DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An array substrate includes a thin-film transistor (TFT), a first insulation layer and a second insulation layer. The TFT is formed on the substrate. The TFT includes an active pattern, a gate metal pattern and a data metal pattern. The first insulation layer insulates the active pattern from the gate metal pattern. The second insulation layer is formed spaced apart by a predetermined width from at least one edge of the substrate. The second insulation layer insulates the gate metal pattern from the data metal pattern. Therefore, the second insulation layer is formed so that stress that is inflicted on a substrate may be decreased, thereby preventing deformation during a manufacturing process of the substrate.01-29-2009
20090026464Semiconductor device and manufacturing method thereof - A TFT is manufactured using at least five photomasks in a conventional liquid crystal display device, and therefore the manufacturing cost is high.01-29-2009
20090026462WIRING SUBSTRATE AND METHOD OF MANUFACTURING SAME, AND DISPLAY DEVICE - A wiring substrate includes a plurality of lines provided on the substrate, and a plurality of mounting terminals each for respective one of the plurality of lines, the plurality of mounting terminals being arranged in several rows in a staggered pattern, wherein the mounting terminal includes a first conductive film formed in the same layer as the lines, an insulating film covering the lines and the first conductive film, the insulating film having an opening above the first conductive film, and an upper layer conducive film electrically connected to the first conductive film through the opening, and wherein the insulating film includes a thick film portion located on the outside of the area where the plurality of mounting terminals are arranged in several rows in the staggered pattern, and a thin film portion located in the area adjacent to the opening in the row direction of the staggered pattern with a thickness thinner than the thick film portion.01-29-2009
20090026461Semiconductor device including semiconductor circuit made from semiconductor element and manufacturing method thereof - In the present invention, a semiconductor film is formed through a sputtering method, and then, the semiconductor film is crystallized. After the crystallization, a patterning step is carried out to form an active layer with a desired shape. The present invention is also characterized by forming a semiconductor film through a sputtering method, subsequently forming an insulating film. Next, the semiconductor film is crystallized through the insulating film, so that a crystalline semiconductor film is formed. According this structure, it is possible to obtain a thin film transistor with a good electronic property and a high reliability in a safe processing environment.01-29-2009
20110248279Thin film transitor, fabrication method of the same, and display device having the same - A thin film transistor, a method of manufacturing the same, and a display device including the same, the thin film transistor including a substrate; a polysilicon semiconductor layer on the substrate; and a metal pattern between the semiconductor layer and the substrate, the metal pattern being insulated from the semiconductor layer, wherein the polysilicon of the semiconductor layer includes a grain boundary parallel to a crystallization growing direction, and a surface roughness of the polysilicon semiconductor layer defined by a distance between a lowest peak and a highest peak in a surface thereof is less than about 15 nm.10-13-2011
20100244036THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE SAME - A thin film transistor, a method of fabricating the same, and an organic light emitting diode (OLED) display device including the same. The thin film transistor includes a substrate; a semiconductor layer disposed on the substrate and including a channel region; source/drain regions including ions and an offset region; a gate insulating layer disposed on the semiconductor layer; a gate electrode disposed on the gate insulating layer; a first insulating layer disposed on the gate electrode; a second insulating layer disposed on the first insulating layer; and source/drain electrodes disposed on the second insulating layer, and electrically connected to the source/drain regions of the semiconductor layer, respectively. The sum of thicknesses of the gate insulating layer and the first insulating layer that are on the source/drain regions is less than the vertical dispersion depth of the ions included in the source/drain regions.09-30-2010
20090001380THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE SAME AND METHOD OF FABRICATING THE SAME - A thin film transistor includes a substrate, a semiconductor layer disposed on the substrate, including a channel region and source and drain regions and crystallized using a metal catalyst, a gate electrode disposed to correspond to a predetermined region of the semiconductor layer, a gate insulating layer disposed between the gate electrode and the semiconductor layer to insulate the semiconductor layer from the gate electrode, and source and drain electrodes electrically connected to the source and drain regions of the semiconductor layer, respectively. The metal catalyst within 150 Å from a surface of the semiconductor layer in a vertical direction is formed to have a concentration exceeding 0 and not exceeding 6.5×E01-01-2009
20090001379SEMICONDUCTOR DEVICE - In a semiconductor device having a plurality of thin film transistors and matrix wiring lines formed on a substrate, the matrix wiring lines are electrically connected via resistors in order to prevent electrostatic destructions during a panel manufacture process and improve a manufacture yield.01-01-2009
20080246039Method for producing a semiconductor integrated circuit including a thin film transistor and a capacitor - The formation of contact holes and a capacitor is performed in a semiconductor integrated circuit such as an active matrix circuit. An interlayer insulator having a multilayer (a lower layer is silicon oxide; an upper layer is silicon nitride) each having different dry etching characteristic is formed. Using a first mask, the silicon nitride corresponding to the upper layer in the interlayer insulator is etched by dry etching. This etching is completed by using the silicon oxide corresponding to the lower layer as an etching stopper. A pattern is formed using a second mask to form selectively the silicon oxide corresponding to the lower layer. Thus a first portion that the silicon oxide and the silicon nitride are etched and a second portion that only silicon nitride is etched are obtained. The first portion is used as a contact hole. A capacitor is formed in the second portion.10-09-2008
20080246038DISPLAY DEVICE AND CONTROL METHOD OF THE SAME - A display device including a first gate line and a second gate line that extend in parallel with each other, a data line crossing the first and second gate lines to form a pixel region, a pixel electrode in the pixel region and including a main pixel electrode and a sub pixel electrode, which are connected to the first gate line and the data line, a control thin film transistor connected to the second gate line and the sub pixel electrode, and a gate driver. The gate driver outputs a first gate signal to the first gate line and a second gate signal to the second gate line. The first gate signal activates the first gate line during a first time and a second time following the first time, and the second gate signal activates the second gate line during the first time but not the second time.10-09-2008
20080246037Flat display device and method of manufacturing the same - Provided is a flat display device, and more particularly, an active matrix (AM) flat display device having a thin film transistor (TFT). The flat display device includes a substrate, a plurality of TFTs (thin film transistors) provided on the substrate, each TFT comprising an active layer, a source electrode and a drain electrode that contact the active layer, and an ohmic contact layer interposed between the active layer and the source and drain electrodes, and a light emitting device electrically connected to the TFT, wherein the ohmic contact layer and a layer including the source and drain electrodes are formed to have the same pattern.10-09-2008
20090184325METHOD OF PLANARIZING SUBSTRATE, ARRAY SUBSTRATE AND METHOD OF MANUFACTURING ARRAY SUBSTRATE USING THE SAME - A method of planarizing a substrate. An organic layer is formed on a base substrate to cover a metal line formed on the base substrate. A portion of the organic layer is removed to form a pre-planarization layer exposing the metal layer, so that a surface of the base substrate having the metal line is planarized. The pre-planarization layer is cured to flow toward a side surface of the metal line to form a planarization layer making contact with the side surface of the metal line. Therefore, a stepped portion between the base substrate and the metal line can be minimized or substantially eliminated, thereby increasing the surface uniformity of a subsequent layer, thereby improving the reliability of the manufacturing process.07-23-2009
20080315208Semiconductor device and manufacturing method thereof - [Problem] A TFT is manufactured using at least five photomasks in a conventional liquid crystal display device, and therefore the manufacturing cost is high.12-25-2008
20080283842METHOD FOR MAKING SEMICONDUCTOR APPARATUS AND SEMICONDUCTOR APPARATUS OBTAINED BY THE METHOD, METHOD FOR MAKING THIN FILM TRANSISTOR SUBSTRATE AND THIN FILM TRANSISTOR SUBSTRATE OBTAINED BY THE METHOD, AND METHOD FOR MAKING DISPLAY APPARATUS AND DISPLAY APPARATUS OBTAINED BY THE METHOD - A method for making a semiconductor apparatus including the steps of: forming a laminate structure of an insulating film made of a metal oxide and a semiconductor thin film on a substrate; forming a light absorption layer on top of the laminate structure; and irradiating an energy beam of a wavelength capable of being absorbed by the light absorption layer on the light absorption layer and simultaneously crystallizing the insulating film and the semiconductor thin film by means of heat generated in the light absorption layer.11-20-2008
20090050894THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE HAING THE TFT, AND METHOD OF FABRICATING THE OLED DISPLAY DEVICE - A thin film transistor (TFT) includes a substrate, a semiconductor layer disposed on the substrate and including a channel region and source and drain regions, a gate electrode disposed in a position corresponding to the channel region of the semiconductor layer, a gate insulating layer interposed between the gate electrode and the semiconductor layer to electrically insulate the semiconductor layer from the gate electrode, a metal structure made up of metal layer, a metal silicide layer, or a double layer thereof disposed apart from the gate electrode over or under the semiconductor layer in a position corresponding to a region of the semiconductor layer other than a channel region, the structure being formed of the same material as the gate electrode, and source and drain electrodes electrically connected to the source and drain regions of the semiconductor layer.02-26-2009
20120267634Display Device and Electronic Equipment Using the Same - In an active matrix EL display device, pixels which are suitable for a constant current drive are structured. The pixel includes a first switch which has one end connected to a source signal line and the other end connected to a current-voltage conversion element, a second switch which has one end connected to the current-voltage conversion element and the other end connected to a voltage holding capacitor and to a voltage-current conversion element, and a pixel electrode connected to the current-voltage conversion element and to the voltage-current conversion element.10-25-2012
20100127271ELECTRONIC CIRCUIT STRUCTURE AND METHOD FOR FORMING SAME - A thin film transistor (TFT) structure is implemented. This embodiment is much less sensitive than conventional TFTs to alignment errors and substrate distortion. In such a configuration, there is no need to define gate features, so the layout is simplified. Moreover, the gate layer may be patterned by several inexpensive printing or non-printing methods.05-27-2010
20080203396Electro-Optical Substrate, Method for Designing the Same, Electro-Optical Device, and Electronic Apparatus - An electro-optical substrate, including: a transparent substrate; a first light-shielding layer arranged on a first surface of the transparent substrate, in at least part of a region surrounding an opening in plan view; a first insulating layer arranged in a position facing the transparent substrate with the first light-shielding layer interposed therebetween, the first insulating layer having a refraction index n and a layer thickness t measured in nanometers, and covering at least part of the first light-shielding layer; a semiconductor layer, arranged in a position facing the transparent substrate, with the first light-shielding layer interposed therebetween, containing part of a thin film transistor, the thin film transistor including a channel region which is, in plan view, positioned within the first light-shielding layer, a corner edge of the first light-shielding layer and a corner edge of the channel region having a distance L08-28-2008
20080203395SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device and a method for manufacturing the same are provided. First, a transparent substrate is provided. Next, a light-shielding layer is formed over the transparent substrate and a first buffer layer is formed to cover the light-shielding layer. A semiconductor layer is formed over the first buffer layer. Then, the light-shielding layer, the first buffer layer and the semiconductor layer are patterned to form a laminate pattern. A channel and a source/drain region at two sides of the channel are formed within the semiconductor layer. Then, a gate insulating layer is formed over the transparent substrate to cover the laminate pattern. A gate electrode is formed on the gate insulating layer above the channel.08-28-2008
20110260172EL DISPLAY DEVICE AND ELECTRONIC DEVICE - An EL display device capable of producing a vivid multi-gradation color display, and an electronic device having the EL display device. An electric current supplied to an EL element is controlled by providing a resistor between a current control TFT and the EL element formed in a pixel, the resistor having a resistance higher than the on-resistance of the current control TFT. The gradation display is executed by a time-division drive system which controls the emission and non-emission of light of the EL element by time, preventing the effect caused by a dispersion in the characteristics of the current control TFT.10-27-2011
20110068346DISPLAY DEVICE - A display device includes a wire substrate including a wire unit for driving the display device, an integrated circuit chip mounted at the wire substrate, and a pad unit extended from the wire unit to be disposed between the wire substrate and the integrated circuit chip. The pad unit is connected to the integrated circuit chip. The pad unit includes a first conductive layer extended from the wire unit, and a second conductive layer disposed on the first conductive layer. The hardness of the second conductive layer is less than the hardness of the first conductive layer.03-24-2011
20110133200Dual Gate Layout for Thin Film Transistor - A dual gate layout of a thin film transistor of liquid crystal display to alleviate dark current leakage is disclosed. The layout includes (1) a polysilicon on a substrate having a L-shaped or a snake shaped from top-view, which has a heavily doped source region, a first lightly doped region, a first gate channel, a second lightly doped region, a second gate channel, a third lightly doped region and a heavily doped drain region formed in order therein; (2) a gate oxide layer formed on the polysilicon layer and the substrate, (3) a gate metal layer then formed on the gate oxide layer having a scanning line and an extension portion with a L-shaped or an I-shaped. The gate metal intersects with the polysilicon layer thereto define the forgoing gate channels. Among of gate channels, at least one is along the signal line, which is connected to the source region through a source contact.06-09-2011
20100181575SEMICONDUCTOR DEVICE PROVIDED WITH THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE - A semiconductor device includes at least one thin-film transistor 07-22-2010
20110254011DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A display substrate includes a gate line, a gate insulation layer, a data line, a switching element, a protection insulation layer, a gate pad portion and a data pad portion. The gate insulation layer is disposed on the gate line. The switching element is connected to the gate line and the data line. The protection insulation layer is disposed on the switching element. The gate pad portion includes a first gate pad electrode which makes contact with an end portion of the gate line through a first hole formed through the gate insulation layer, and a second gate pad electrode which makes contact with the first gate pad electrode through a second hole formed through the protection insulation layer. The data pad portion includes a data pad electrode which makes contact with an end portion of the data line through a third hole formed through the protection insulation layer.10-20-2011
20110186854SINGLE-SHOT SEMICONDUCTOR PROCESSING SYSTEM AND METHOD HAVING VARIOUS IRRADIATION PATTERNS - High throughput systems and processes for recrystallizing thin film semiconductors that have been deposited at low temperatures on a substrate are provided. A thin film semiconductor workpiece (08-04-2011
20110186853THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND DISPLAY UNIT - A thin film transistor is provided. The thin film transistor includes a gate electrode, a gate insulating film, and an oxide semiconductor film, wherein at least a portion of the gate electrode includes a metal oxide. An electric device and a display device that include the thin film transistor are also provided in addition to a manufacture method.08-04-2011
20110133199ARRRAY SUBSTRATE FOR LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - An array substrate for an LCD device includes a first TFT including a first semiconductor layer, a first gate electrode, wherein the first gate electrode is directly over the first semiconductor layer; a first protrusion extending from the first gate electrode along an edge of the first semiconductor layer; a second TFT including a second semiconductor layer, a second gate electrode, wherein the second gate electrode is directly over the second semiconductor layer; a second protrusion extending from the second gate electrode along an edge of the second semiconductor layer; a third TFT connected to crossed data and gate lines including a third semiconductor layer, a third gate electrode, wherein the third gate electrode is directly over the third semiconductor layer; a third protrusion extending from the third gate electrode along an edge of the third semiconductor layer; and a pixel electrode.06-09-2011
20110133201ELECTRONIC CIRCUIT - An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layer is less than 1500 Å, e.g., between 100 and 750 Å. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting of aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.06-09-2011
20120146041ORGANIC LIGHT EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - An organic light emitting display apparatus includes a first substrate including a display region disposed in a center of one surface thereof and a bonding region formed along a closed loop to surround the display region; a semiconductor layer corresponding to the bonding region of the first substrate, formed along the closed loop to surround the display region, and comprising a polycrystal; at least one insulation layer formed over the semiconductor layer; a bonding member formed over the at least one insulation layer and formed in a region corresponding to the semiconductor layer; and a second substrate having the one surface disposed to face one surface of the first substrate and coupled to the bonding member to encapsulate the display region of the first substrate.06-14-2012
20120146043SEMICONDUCTOR DEVICE, ACTIVE MATRIX SUBSTRATE, AND DISPLAY DEVICE - Provided are a semiconductor device that can be fabricated easily and can achieve leakage current reduction, without its structure becoming complex or the device becoming bulky; an active matrix substrate in which the device is used; and a display device in which the device is used. A switching portion (06-14-2012
20110095300THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME - A manufacturing method of a thin film transistor array panel includes forming a gate line on a substrate and a gate insulating layer on the gate line, forming a semiconductor on the gate insulating layer, forming a first data line and a first drain electrode on the semiconductor, forming a lower passivation layer on the first data line and the first drain electrode, forming an upper passivation layer on the lower passivation layer and a metal layer on the upper passivation layer, etching the metal layer by using a photosensitive film as a mask to form a reflecting electrode and to expose the lower passivation layer, etching the exposed lower passivation layer to form a first contact hole exposing the first drain electrode, and forming a connection assistance member connecting the first drain electrode and the reflecting electrode through the first contact hole after removing the photosensitive film.04-28-2011
20110095299DISPLAY DEVICE AND METHOD FOR MANUFACTURING DISPLAY DEVICE - Disclosed herein is a display device, including: a substrate; a circuit part configured to include a drive element formed over the substrate; a planarization insulating layer configured to be formed on the circuit part; an electrically-conductive layer configured to be formed on the planarization insulating layer and include a plurality of first electrodes and an auxiliary interconnect; an aperture-defining insulating layer configured to insulate the plurality of first electrodes from each other and have an aperture through which part of the first electrode is exposed; a plurality of light emitting elements configured to be formed by stacking the first electrode, an organic layer including a light emitting layer, and a second electrode in that order; and a separator configured to be formed by removing the planarization insulating layer at a position surrounding a display area in which the plurality of light emitting elements connected to the drive element are disposed.04-28-2011
20100078646DISPLAY DEVICE - A display device including an active area having a plurality of pixels comprises an array substrate including a plurality of display elements disposed at said pixels respectively; a sealing substrate disposed to be opposed to said array substrate; and a seal member disposed between said array substrate and said sealing substrate and encircling said active area; wherein said seal member is made of frit glass, and a resin layer is disposed between said array substrate and said sealing substrate in said active area.04-01-2010
20110175101LIGHT-EMITTING DEVICE, FLEXIBLE LIGHT-EMITTING DEVICE, ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE AND FLEXIBLE-LIGHT EMITTING DEVICE - To simply provide a flexible light-emitting device with long lifetime. To provide a flexible light-emitting device with favorable display characteristics, high yield, and high reliability without display unevenness. Provided is a flexible light-emitting device including: a substrate having flexibility and a property of transmitting visible light; an adhesive layer provided over the substrate; a conductive layer having a property of transmitting visible light provided over the adhesive layer; an insulating layer disposed over the conductive layer; a transistor provided over the insulating layer; an interlayer insulating layer covering the transistor, a light-emitting element including a first electrode electrically connected to source or drain electrodes of the transistor and provided over the interlayer insulating layer, a second electrode facing the first electrode, and a layer including an organic compound having a light-emitting property provided between the first and second electrodes; and a sealing layer covering the light-emitting element.07-21-2011
20090189161Light Emitting Device - While suppressing the frequency of a signal line driver circuit, a blur of a moving image of a light-emitting device using a light-emitting transistor can be prevented, without reducing a frame frequency. A switching element is provided in a path of a current which flows between a source and a drain of a light-emitting transistor, and the light-emitting transistor is made not to emit light by turning off the switching element, whereby pseudo-impulse driving is performed. Switching of the switching element can be controlled by a scan line driver circuit. In a specific structural example, the light-emitting device includes, in a pixel, a light-emitting transistor, a first switching element which controls supply of a potential of a video signal to a gate of the light-emitting transistor, and a second switching element which controls a current which flows between a source and a drain of the light-emitting transistor.07-30-2009
20100059757APPARATUS AND METHOD OF MANUFACTURING THE SAME - An apparatus includes a substrate having a plurality of pixels, wherein the substrate comprises a concave-convex surface and a cured adhesive layer formed on the concave-convex surface.03-11-2010
20100181574THIN FILM TRANSISTOR DEVICES WITH DIFFERENT ELECTRICAL CHARACTERISTICS AND METHOD FOR FABRICATING THE SAME - A system for displaying images. The system includes a thin film transistor (TFT) device including a first insulating layer covering a first region and a second region of a substrate. A first polysilicon active layer is disposed in the first region and between the substrate and the first insulating layer. A second polysilicon active layer is disposed on the first insulating layer in the second region. A polysilicon gate layer is disposed above the first polysilicon active layer. A second insulating layer covers the polysilicon gate layer and the second polysilicon active layer. A metal gate layer is disposed above the second polysilicon active layer. A method for fabricating the system for displaying images including the TFT device is also disclosed.07-22-2010
20100025692PIXEL STRUCTURE - A pixel structure formed on a substrate and electrically connected with a scan line and a data line, and including a semiconductor pattern and a pixel electrode is provided. The semiconductor pattern includes at least two channel areas, at least one doping area, a source area, and a drain area. The channel areas are located below the scan line and have different aspect ratios. The doping area is connected between the channel areas. The pixel electrode electrically connects the drain area, the source area is connected between one of the channel areas and the data line, and the drain area is connected between the other channel area and the pixel electrode. The scan line has different widths above different channel areas, and a length of each channel area is substantially equal to the width of the scan line.02-04-2010
20110215337ELECTRIC OPTICAL DEVICE AND ELECTRONIC DEVICE - An electric optical device includes a transistor that includes a semiconductor layer having a source region connected to a data line, a drain region connected to a pixel electrode, and a channel region, and a gate electrode, a first light blocking film that is formed to be wider than the gate electrode and that is connected to the gate electrode via a first contact hole which is opened in a first insulating film disposed on the gate electrode, and a second light blocking film that is provided between the semiconductor layer and a substrate and is connected to the first light blocking film via a second contact hole which is opened to penetrate the first insulating film, a gate insulating film, and a second insulating film.09-08-2011
20100019246THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a thin film transistor array panel includes; forming a gate line including a gate electrode and a height increasing member on a substrate, forming a gate insulating layer on the gate line and the height increasing member, forming a semiconductor, a data line including a source electrode, and a drain electrode facing the source electrode and overlapping at least a portion of the height increasing member on the gate insulating layer, forming a first insulating layer on the gate insulating layer, a data line and the drain electrode, forming a light-blocking member on a portion of the first insulating layer corresponding to the gate line and the data line, forming a color filter in an area bound by the light-blocking member, forming a second insulating layer on the light-blocking member and the color filter, and patterning the second insulating layer, the light-blocking member or the color filter, and the first insulating layer to form a contact hole exposing a portion of the drain electrode aligned with the height increasing member.01-28-2010
20120146040SUBSTRATE AND DISPLAY DEVICE INCLUDING THE SAME - Disclosed is a substrate for a display device that includes a composite material layer including an inorganic fiber material and a resin, and a metal layer disposed on the composite material layer, and a display device including the substrate.06-14-2012
20090173948UNIFORM LARGE-GRAINED AND GRAIN BOUNDARY LOCATION MANIPULATED POLYCRYSTALLINE THIN FILM SEMICONDUCTORS FORMED USING SEQUENTIAL LATERAL SOLIDIFICATION AND DEVICES FORMED THEREON - Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed. In one preferred arrangement, a method includes the steps of generating a sequence of excimer laser pulses, controllably modulating each excimer laser pulse in the sequence to a predetermined fluence, homoginizing each modulated laser pulse in the sequence in a predetermined plane, masking portions of each homoginized fluence controlled laser pulse in the sequence with a two dimensional pattern of slits to generate a sequence of fluence controlled pulses of line patterned beamlets, each slit in the pattern of slits being sufficiently narrow to prevent inducement of significant nucleation in region of a silicon thin film sample irradiated by a beamlet corresponding to the slit, irradiating an amorphous silicon thin film sample with the sequence of fluence controlled slit patterned beamlets to effect melting of portions thereof corresponding to each fluence controlled patterned beamlet pulse in the sequence of pulses of patterned beamlets, and controllably sequentially translating a relative position of the sample with respect to each of the fluence controlled pulse of slit patterned beamlets to thereby process the amorphous silicon thin film sample into a single or polycrystalline silicon thin film.07-09-2009
20090173947DISPLAY SUBSTRATE AND DISPLAY PANEL HAVING THE SAME - A display substrate according to exemplary embodiments of the present invention includes a transistor layer, a color filter layer and a pixel electrode. The transistor layer includes a transistor connected to a gate line and a data line crossing each other, and a contact part extending from a drain electrode of the transistor. The color filter layer is disposed on the transistor layer. The color filter layer has an opening formed therein, and a center of the opening is spaced apart from a center of the contact part. The pixel electrode is electrically connected to the transistor through a contact hole exposing the contact part.07-09-2009
20090173946PIXEL STRUCTURE AND ACTIVE DEVICE ARRAY SUBSTRATE - A pixel structure including an active device, a common line pattern, a protective layer, a pixel electrode, and a patterned semiconductor layer is provided. The active device is disposed on a substrate. In addition, the common line pattern is disposed on the substrate and covered with an insulation layer. The protective layer covers the active device and a part of the insulation layer. The protective layer has a contact window exposing the active device. The pixel electrode is disposed on the protective layer and electrically connected to the active device through the contact window. The patterned semiconductor layer is disposed on the insulation layer above the common line pattern. The patterned semiconductor layer is located between the common line pattern and the pixel electrode.07-09-2009
20110018001GATE DRIVER ON ARRAY OF A DISPLAY - A gate driver on array of a display includes a substrate having a peripheral region, and a gate driver on array structure formed in the peripheral region. The gate driver on array structure includes a pull-down transistor, and the pull-down transistor has a gate electrode, an insulating layer, a semiconductor island, a source electrode, and a drain electrode. The semiconductor island extends out of both edges of the gate electrode, and extends out of an edge of the source electrode and an edge of the drain electrode.01-27-2011
20090261339GATE DRIVER ON ARRAY OF A DISPLAY AND METHOD OF MAKING DEVICE OF A DISPLAY - In a method of making device of a display, an insulating layer, a semiconductor layer, an ohmic contact layer, a second conductive layer, and a photoresist pattern are consecutively formed on a first conductive structure. The photoresist pattern includes a first thickness region, and a second thickness region outside the first thickness region. The thickness of the second thickness region is smaller than that of the first thickness region. In addition, in a gate driver on array (GOA) of a display, it includes a gate driver on array structure with a pull-down transistor. The pull-down transistor has a gate electrode, a semiconductor island, a source electrode and a drain electrode. The semiconductor island extends out of the edges of the gate electrode, the source electrode, and the drain electrode.10-22-2009
20110073868ELECTRO-OPTICAL DEVICE AND ELECTRONIC APPARATUS - An electro-optical device comprises: a first data line extending in a first direction; a second data line extending in the first direction and arranged so as to be at least partially overlapped with the first data line; a first scanning line and a second scanning line extending in a second direction intersecting the first direction; a first transistor electrically connected to the first data line and electrically connected to the first scanning line; a first pixel electrode electrically connected to the first transistor; a second transistor electrically connected to the second data line and electrically connected to the second scanning line; and a second pixel electrode electrically connected to the second transistor.03-31-2011
20110073867ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF - An array substrate comprises a substrate provided with a circuit pattern and covering layers that cover the upper surfaces and side surfaces of respective portions of the circuit pattern.03-31-2011
20110114961METHOD OF FORMING POLYCRYSTALLINE SILICON LAYER, THIN FILM TRANSISTOR, ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE HAVING THE SAME, AND METHODS OF FABRICATING THE SAME - A method of forming a polycrystalline silicon layer, a thin film transistor (TFT), an organic light emitting diode (OLED) display device having the same, and methods of fabricating the same. The method of forming a polycrystalline silicon layer includes providing a substrate, forming a buffer layer on the substrate, forming an amorphous silicon layer on the buffer layer, forming a groove in the amorphous silicon layer, forming a capping layer on the amorphous silicon layer, forming a metal catalyst layer on the capping layer, and annealing the substrate and crystallizing the amorphous silicon layer into a polycrystalline silicon layer.05-19-2011
20110114963Thin film transistor, organic light emitting diode display device having the same, and method of fabricating the same - A thin film transistor includes a substrate, a buffer layer on the substrate, a semiconductor layer including source/drain regions and a channel region on the buffer layer, a gate insulating layer corresponding to the channel region, a gate electrode corresponding to the channel region, and source/drain electrodes electrically connected to the semiconductor layer. A polysilicon layer of the channel region may include only a low angle grain boundary, and a high angle grain boundary may be disposed in a region of the semiconductor layer that is apart from the channel region.05-19-2011
20120305930SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD FOR SAME - A semiconductor device of the present invention includes an n-channel first thin film transistor and a p-channel second thin film transistor on one and the same substrate. The first thin film transistor has a first semiconductor layer (12-06-2012
20110012124Metal-Induced Crystallization of Amorphous Silicon in Thin Film Transistors - The invention provides a method for forming thin film transistors including a polycrystalline semiconducting film. The method comprises depositing a first layer of amorphous semiconducting thin film on to a substrate; depositing a second layer of thin film on to the first layer of amorphous semiconducting thin film; patterning the second layer of thin film so that the first layer of amorphous semiconducting thin film is exposed at selected locations; exposing the first and second layers of thin film to a nickel containing compound in either a solution or a vapor phase ; removing the second layer of thin film; and annealing the first layer of amorphous semiconducting thin film at an elevated temperature so the first layer of amorphous semiconducting thin film converts into a polycrystalline semiconducting thin film.01-20-2011
20120037916Organic light-emitting diode display device and method of manufacturing the same - An organic light-emitting diode display device includes a substrate, a display unit on the substrate, a touch unit facing the substrate, and a sealing portion surrounding the display unit. The sealing portion couples the substrate to the touch unit and includes glass frit. The touch unit includes an encapsulation substrate, a first conductive layer on the encapsulation substrate, an insulating layer on a portion of the first conductive layer and the encapsulation substrate, and a second conductive layer on the first conductive layer and the insulating layer. The insulating layer of the touch unit includes an organosilicon compound and has a thermal decomposition temperature of about 360° C. or more.02-16-2012
20090256157DISPLAY DEVICE AND MANUFACTURING METHOD OF DISPLAY DEVICE - A display device includes a first substrate on which a semiconductor circuit is formed. A second substrate is disposed over the first substrate to include a first electrode formed on a first surface to perform image displaying, and a second electrode exposed to a second surface and bonded to the first electrode via a contact hole. A third substrate is disposed over the second substrate to include a third electrode formed to perform image displaying in association with the first electrode of the second substrate. An image displaying layer is disposed between the second substrate and the third substrate to perform image displaying. An electrode on a surface of the first substrate on which the semiconductor circuit is formed is electrically connected to the second electrode exposed to the second surface of the second substrate.10-15-2009
20110108847THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE HAVING THE SAME, AND METHOD OF FABRICATING THE SAME - A thin film transistor (TFT), a method of fabricating the same, an organic light emitting diode (OLED) display device having the same, and a method of fabricating the same. The TFT includes a substrate; a buffer layer disposed on the substrate; a semiconductor layer disposed on the buffer layer; a gate insulating layer disposed on the semiconductor layer; a gate electrode disposed on the gate insulating layer and corresponding to the semiconductor layer; and source and drain electrodes insulated from the gate electrode, and electrically connected to the semiconductor layer. Here, the semiconductor layer includes a plurality of seed regions separated from each other by a distance of 50 μm or more.05-12-2011
20110089428SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device having high operating performance and reliability, and a manufacturing method thereof are provided.04-21-2011
20090101913APPARATUS AND METHOD FOR REDUCING PHOTO LEAKAGE CURRENT FOR TFT LCD - A method of forming a thin film transistor (TFT) array panel, comprising the steps of: (i) forming a patterned first conductive layer, which includes a gate line and a shielding portion, on a substrate, (ii) forming a gate insulating layer on the patterned first conductive layer and the substrate, (iii) forming a patterned semiconductor layer on the gate insulating layer, (iv) forming a patterned second conductive layer, which includes a source electrode, and a drain electrode on the patterned semiconductor layer, and a data line that is electrically connected to the source electrode, (v) forming a patterned passivation layer on the patterned second conductive layer and the substrate, and (vi) forming a patterned transparent conductive layer on the patterned passivation layer.04-23-2009
20110315993Light Emitting Device and Method of Manufacturing the Same - There is provided a light emitting device in which low power consumption can be realized even in the case of a large screen. The surface of a source signal line or a power supply line in a pixel portion is plated to reduce a resistance of a wiring. The source signal line in the pixel portion is manufactured by a step different from a source signal line in a driver circuit portion. The power supply line in the pixel portion is manufactured by a step different from a power supply line led on a substrate. A terminal is similarly plated to made the resistance reduction. It is desirable that a wiring before plating is made of the same material as a gate electrode and the surface of the wiring is plated to form the source signal line or the power supply line.12-29-2011
20120056190EL Display Device and a Method of Manufacturing the Same - To provide a high throughput film deposition means for film depositing an organic EL material made of polymer accurately and without any positional shift. A pixel portion is divided into a plurality of pixel rows by a bank, and a head portion of a thin film deposition apparatus is scanned along a pixel row to thereby simultaneously apply a red light emitting layer application liquid, a green light emitting layer application liquid, and a blue light emitting layer application liquid in stripe shapes. Heat treatment is then performed to thereby form light emitting layers luminescing each of the colors red, green, and blue.03-08-2012
20110156046PHOTOMASK AND THIN-FILM TRANSISTOR FABRICATED USING THE PHOTOMASK - A photomask includes; a source electrode pattern including; a first electrode portion which extends in a first direction, a second electrode portion which extends in the first direction and is substantially parallel to the first electrode portion, and a third electrode portion which extends from a first end of the first electrode portion to a first end of the second electrode portion and is rounded with a first curvature, a drain electrode pattern which extends in the first direction and is disposed between the first electrode portion and the second electrode portion, wherein an end of the drain electrode pattern is rounded to correspond to the third electrode portion; and a channel region pattern which is disposed between the source electrode pattern and the drain electrode pattern, wherein a center location of the first curvature and a center location of the rounded portion of the end of the drain electrode pattern are the same.06-30-2011
20120056189THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICE USING THE SAME - A thin film transistor includes a substrate, a semiconductor layer provided on the substrate and crystallized by using a metal catalyst, a gate electrode insulated from and disposed on the semiconductor layer, and a getter layer disposed between the semiconductor layer and the gate electrode and formed with a metal oxide having a diffusion coefficient that is less than that of the metal catalyst in the semiconductor layer.03-08-2012
20120007095SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF - This invention provides a semiconductor device having high operation performance and high reliability. An LDD region 01-12-2012
20120007093TRANSISTOR STRUCTURE AND LIGHT EMITTING APPARATUS - Disclosed is a transistor structure including: a first thin film transistor including, a first gate electrode; a first insulating film which covers the first gate electrode; and a first semiconductor film formed on the first insulating film in a position corresponding to the first gate electrode; and a second thin film transistor including, a second semiconductor film formed on the first insulating film; a second insulating film which covers the second semiconductor film; and a second gate electrode formed in a position corresponding to a channel portion of the second semiconductor film on the second insulating film, wherein the first semiconductor film and the second semiconductor film include a first portion on the first insulating film side and a second portion on the opposite surface side, and one of the first portion or the second portion has a higher degree of crystallization of silicon compared to the other.01-12-2012
20120119217NONPLANAR DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - In one embodiment, a nonplanar display devise includes an array substrate and a counter substrate formed of non-glass material. The array substrate includes a polishing stopper layer formed on a glass substrate. A ground layer is formed on a polishing layer. A switching element is arranged on the ground layer, and a pixel electrode is connected to the switching element. The nonplanar display device is manufactures as follows. First, the glass substrate is removed from the display cell. Then, the polishing stopper layer of the array substrate is removed. Finally, the nonplanar display device is manufactured by attaching an exposed ground layer of the array substrate and an insulating layer formed of the non-glass material in the display cell.05-17-2012
20120007096ID CHIP AND IC CARD - The present invention provides an ID chip or an IC card in which the mechanical strength of an integrated circuit can be enhanced without suppressing a circuit scale. An ID chip or an IC card of the present invention has an integrated circuit in which a TFT (a thin film transistor) is formed from an insulated thin semiconductor film. Further, an ID chip or an IC card of the present invention has a light-emitting element and a light-receiving element each using a non-single-crystal thin film for a layer conducting photoelectric conversion. Such a light-emitting element or a light-receiving element may be formed consecutively to (integrally with) an integrated circuit or may be formed separately and attached to an integrated circuit.01-12-2012
20120007094METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A semiconductor device includes a thin film transistor. The thin film transistor includes a semiconductor film over a substrate, in which the semiconductor film includes a pair of first regions, a pair of second regions interposed between the pair of first regions, and a channel formation region interposed between the pair of second regions. A concentration of an impurity in the pair of second regions is smaller than a concentration of the impurity in the pair of first regions. The thin film transistor includes an insulating film, in which a portion of the insulating film is provided over the semiconductor film. The thin film transistor includes a conductive film over the portion, and the conductive film includes a taper shape.01-12-2012
20090166639ACTIVE FIELD EMISSION SUBSTRATE AND ACTIVE FIELD EMISSION DISPLAY - An active field emission substrate including a thin film transistor (TFT) substrate and a field emission device substrate is provided. The TFT substrate has a plurality of TFTs, and each TFT at least includes a source, a drain, and a gate. The field emission device substrate is disposed on the TFT substrate and has a plurality of conductive channels and a plurality of field emission sources. Each conductive channel passes through the field emission device substrate and is electrically connected with each field emission source. Moreover, each conductive channel in the field emission device substrate is electrically conducted with the source or the drain of each TFT in the TFT substrate. The active field emission substrate is made up of two substrates fabricated by separate processes, so the procedures can be simplified and the yield can be improved.07-02-2009
20120012852METHOD OF MANUFACTURING THIN FILM TRANSISTOR - The object of the present invention is to form a low-concentration impurity region with good accuracy in a top gate type TFT. Phosphorus is added to a semiconductor layer by using a pattern made of a conductive film as a mask to form an N-type impurity region in a self-alignment manner. A positive photoresist is applied to a substrate so as to cover the pattern and then is exposed to light applied to the back of the substrate and then is developed, whereby a photoresist 01-19-2012
20120012853TFT ARRANGEMENT FOR DISPLAY DEVICE - A new TFT arrangement is demonstrated, which enables prevention of TFT to be formed over a joint portion between the adjacent SOI layers prepared by the process including the separation of a thin single crystal semiconductor layer from a semiconductor wafer. The TFT arrangement is characterized by the structure where a plurality of TFTs each belonging to different pixels is gathered and arranged close to an intersection portion of a scanning line and a signal line. This structure allows the distance between regions, which are provided with the plurality of TFTs, to be extremely large compared with the distance between adjacent TFTs in the conventional TFT arrangement in which all TFTs are arranged in at a regular interval. The formation of a TFT over the joint portion can be avoided by the present arrangement, which leads to the formation of a display device with a negligible amount of display defects.01-19-2012
20110049525ACTIVE MATRIX SUBSTRATE, DISPLAY DEVICE, TELEVISION APPARATUS, MANUFACTURING METHOD OF AN ACTIVE MATRIX SUBSTRATE, AND MANUFACTURING METHOD OF A DISPLAY DEVICE - An active matrix substrate includes: a plurality of pixel electrodes arranged in a matrix pattern and each forming a pixel; a plurality of gate lines each provided between the corresponding pixel electrodes and extending in parallel with each other; a plurality of first source lines each provided between the corresponding pixel electrodes and extending in a direction crossing an extending direction of the gate lines; a plurality of TFTs provided corresponding to the respective pixel electrodes and connected to the respective pixel electrodes, the respective gate lines, and the respective first source lines; a plurality of capacitor lines each provided between the corresponding gate lines and extending in parallel with each other; and a plurality of second source lines each provided between the corresponding pixel electrodes and extending in parallel with the first source lines.03-03-2011
20110049524DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - Provided is a display device including a thin-film transistor and a capacitor element, the thin-film transistor includes: a first insulating film (IN03-03-2011
20110049523Organic light emitting diode display and method of manufacturing the same - An OLED display including a substrate main body; a first gate electrode and a second semiconductor layer; a gate insulating layer on the first gate electrode and the second semiconductor layer; a first semiconductor layer and a second gate electrode overlying the first gate electrode and the second semiconductor layer, respectively; etching stopper layers contacting portions of the first semiconductor layer; an interlayer insulating layer on the first semiconductor layer and the second gate electrode and including contact holes exposing the plurality of etching stopper layers, respectively; a first source electrode and a first drain electrode on the interlayer insulating layer and the contact holes being indirectly connected to the first semiconductor layer via the etching stopper layers or directly connected to the first semiconductor layer; and a second source electrode and a second drain electrode on the interlayer insulating layer being connected to the second semiconductor layer.03-03-2011
20110049522SEMICONDUCTOR DISPLAY DEVICE - It is an object of the present invention to provide a semiconductor display device having an interlayer insulating film which can obtain planarity of a surface while controlling film formation time, can control treatment time of heating treatment with an object of removing moisture, and can prevent moisture in the interlayer insulating film from being discharged to a film or an electrode adjacent to the interlayer insulating film. An inorganic insulating film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover a TFT. Next, an organic resin film containing photosensitive acrylic resin is applied to the organic insulting film, and the organic resin film is partially exposed to light to be opened. Thereafter, an inorganic insulting film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover the opened organic resin film. Then, in the opening part of the organic resin film, a gate insulating film and the two layer inorganic insulating film containing nitrogen are opened partially is by etching to expose an active layer of the TFT.03-03-2011
20110049521ACTIVE DEVICE ARRAY MOTHER SUBSTRATE AND METHOD OF FABRICATING DISPLAY PANEL - An active device array mother substrate including a substrate, pixel arrays, and a polymer-stabilized alignment curing circuit is provided. The substrate has panel regions, a circuit region, a first cutting line, and a second cutting line. The first cutting line is disposed on the circuit region between an edge of the substrate and the second cutting line. The active devices of the pixel arrays have a semiconductor layer. The polymer-stabilized alignment curing circuit disposed on the circuit region includes curing pads disposed between the edge of the substrate and the first cutting line and curing lines having an upper conductive layer connected to the corresponding curing pads and the corresponding pixel array. The upper conductive layer is in the same layer as the source/drain conductor. Therefore, the curing lines are capable of preventing problems such as peeling, so as to keep the polymer-stabilized alignment curing circuit operating normally.03-03-2011
20120153293Display Device - There is provided an active matrix EL display device that can display a clear multi gray-scale color display to reduce the shift in the potential caused by the potential drop due to the wiring resistance of a power source supply line, in order to decrease the unevenness in a display region. A plurality of drawing out ports of the power source supply line are arranged. Further, in the wiring resistance between the external input terminal and the pixel portion power source supply line, potential compensation is performed by supplying potential to the power source supply line by a feedback amplifier. Further, in addition to above structure, the power source supply line may be arranged in a matrix.06-21-2012
20120104406THIN-FILM TRANSISTOR, DISPLAY DEVICE, AND MANUFACTURING METHOD FOR THIN-FILM TRANSISTORS - Disclosed is a high-quality, efficiently manufacturable thin film transistor in which leakage current is minimized. The thin film transistor is provided with a semiconductor layer (05-03-2012
20120205660METHOD OF MANUFACTURING THIN FILM TRANSISTOR, THIN FILM TRANSISTOR, AND DISPLAY UNIT - A thin film transistor having a crystalline silicon film that is formed over an insulating substrate with a gate electrode and a gate insulating film in between, and has a channel region in a region corresponding to the gate electrode; an insulating channel protective film that is selectively formed in a region corresponding to the channel region on the crystalline silicon film; an n+ silicon film having a source region and a drain region that sandwich a region corresponding to the channel region on the channel protective film and the crystalline silicon film; and a metal film having a source electrode and a drain electrode that respectively correspond to the source region and the drain region.08-16-2012
20120061678METHOD OF LASER ANNEALING SEMICONDUCTOR LAYER AND SEMICONDUCTOR DEVICES PRODUCED THEREBY - A laser annealing method includes forming a nitrogen-doped layer on a semiconductor layer, the nitrogen-doped layer having a nitrogen concentration of at least 3×1003-15-2012
20120061677SEMICONDUCTOR DEVICE - To provide a semiconductor device including a transistor formed using a highly reliable oxide semiconductor. To provide a semiconductor device which can be manufactured with high productivity and high yield by reducing the number of photolithography steps. The semiconductor device includes a first wiring, a second wiring, and a third wiring whose potential is lower than those of the first wiring and the second wiring between the first wiring and the second wiring. In the semiconductor device, the first wiring is electrically connected to the third wiring through a first transistor in which a gate electrode layer is electrically connected to a source electrode layer, the second wiring is electrically connected to the third wiring through a second transistor in which the gate electrode layer is electrically connected to the source electrode layer, and a continuous oxide semiconductor film used for a semiconductor region of the first transistor and the second transistor is provided above or below the first wiring, the second wiring, and the third wiring.03-15-2012
20090146153PIXEL WITH STRAINED SILICON LAYER FOR IMPROVING CARRIER MOBILITY AND BLUE RESPONSE IN IMAGERS - An imager having a pixel cell having an associated strained silicon layer. The strained silicon layer increases charge transfer efficiency, decreases image lag, and improves blue response in imaging devices.06-11-2009
20120205659CRYSTALLIZATION APPARATUS, CRYSTALLIZATION METHOD, AND METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY APPARATUS - An organic light-emitting display apparatus includes a substrate, a thin film transistor, a reflective layer, and an organic emission device. The thin film transistor includes an active layer patterned on the substrate at a predetermined interval, a gate electrode, and source/drain electrodes. The reflective layer is between the substrate and the active layer. The organic emission device has sequentially stacked therein a pixel electrode electrically connected to the TFT, an intermediate layer including an emission layer, and an opposing electrode.08-16-2012
20110042678Pad area, organic light emitting diode display device having the same, and method of fabricating the same - An organic light emitting diode (OLED) display device having a pixel area and a pad area. The pad area includes a silicon layer pattern arranged on the substrate, an insulating layer arranged on the silicon layer pattern, an interconnection layer arranged on the insulating layer, and a protective layer surrounding an edge of the interconnection layer and having an opening exposing the interconnection layer. Since a surface area of the interconnection layer is increased due to a roughness of the underlying polycrystalline silicon layer pattern in the pad area, resulting in increased contact area and reduced contact resistance between parts configured to operate a flat panel display device and the interconnection layer is increased.02-24-2011
20090134401Thin Film Transistor and Display Device, Method for Manufacturing the Same, and Television System - The present invention provides a technique by which a component forming a display device, such as a wiring can be formed with good adhesion.05-28-2009
20090134399Semiconductor Device and Method for Manufacturing the Same - A manufacturing method of an active matrix light emitting device in which the active matrix light emitting device can be manufactured in a shorter time with high yield at low cost compared with conventional ones will be provided. It is a feature of the present invention that a layered structure is employed for a metal electrode which is formed in contact with or is electrically connected to a semiconductor layer of each TFT arranged in a pixel area of an active matrix light emitting device. Further, the metal electrode is partially etched and used as a first electrode of a light emitting element. A buffer layer, a layer containing an organic compound, and a second electrode layer are stacked over the first electrode.05-28-2009
20090134398Array substrate for liquid crystal display device - An array substrate for an LCD device and a method of fabricating the same are disclosed. The array substrate includes: a substrate defining a display area and a non-display area; an n-type driving TFT and a p-type driving TFT in the non-display area; a switching TFT in the display region; a storage capacitor in the display region, the storage capacitor including first to third storage layers sequentially layered with intervening insulating layers, wherein the first storage layer contacts a first semiconductor layer under the first storage layer; and a pixel electrode in the display region, the pixel electrode connected to the switching TFT.05-28-2009
20090134397METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AND ELECTRONIC APPLIANCE - A non-single-crystal semiconductor layer is formed over a substrate, and then a single crystal semiconductor layer is formed over part of the non-single-crystal semiconductor layer. Thus, a semiconductor element of a region which requires a large area (e.g. a pixel region in a display device) can be formed using the non-single-crystal semiconductor layer, and a semiconductor element of a region which requires high speed operation (e.g. a driver circuit region in a display device) can be formed using the single crystal semiconductor layer.05-28-2009
20090134396SEMICONDUCTOR RANGE-FINDING ELEMENT AND SOLID-STATE IMAGING DEVICE - To transfer signal charges generated by a semiconductor photoelectric conversion element in opposite directions, the center line of a first transfer gate electrode and that of a second transfer gate electrodes are arranged on the same straight line, and a U-shaped first exhausting gate electrode and a second exhausting gate electrode are arranged to oppose to each other. The first exhausting gate electrode exhausts background charges generated by a background light in the charge generation region, and the second exhausting gate electrode exhausts background charges generated by the background light in the charge generation region. The background charges exhausted by the first exhausting gate electrode are received by a first exhausting drain region and the background charges exhausted by the second exhausting gate electrode are received by a first exhausting drain region.05-28-2009
20120211758THIN-FILM TRANSISTOR DEVICE MANUFACTURING METHOD, THIN-FILM TRANSISTOR DEVICE, AND DISPLAY DEVICE - A thin-film transistor device manufacturing method of forming a crystalline silicon film of stable crystallinity using a laser of a wavelength in a visible region is provided. The thin-film transistor device manufacturing method forms a plurality of gate electrodes above a substrate. A gate insulation layer is formed on the plurality of gate electrodes. An amorphous silicon layer is formed on the gate insulation layer. The amorphous silicon layer is crystallized using predetermined laser light to produce a crystalline silicon layer. A source electrode and a drain electrode are formed on the crystalline silicon layer in a region that corresponds to each of the plurality of gate electrodes. A film thickness of the gate insulation layer and a film thickness of the amorphous silicon layer satisfy predetermined conditional expressions.08-23-2012
20100289028ELECTRONIC DEVICE, DISPLAY DEVICE, INTERFACE CIRCUIT AND DIFFERENTIAL AMPLIFICATION DEVICE, WHICH ARE CONSTITUTED BY USING THIN-FILM TRANSISTORS - An integrated circuit, which is configured such that a MOS transistor and a bipolar transistor are integrated at the same time, is formed on an insulating substrate which includes a display device. An electronic device or a display includes a plurality of semiconductor devices which are formed by using a semiconductor thin film and are formed in the semiconductor thin film that is provided on an insulating substrate and is crystallized in a predetermined direction. The plurality of semiconductor devices include a MOS transistor and at least either one of a lateral bipolar thin-film transistor and a MOS-bipolar hybrid thin film transistor.11-18-2010
20120126238SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS USING THE SAME - A semiconductor device with high function, multifunction and high added value. The semiconductor device includes a PLL circuit that is provided over a substrate and outputs a signal with a correct frequency. By providing such a PLL circuit over the substrate, a semiconductor device with high function, multifunction and high added value can be achieved.05-24-2012
20120248454EL Display Device and Manufacturing Method Thereof - Reducing the manufacturing cost of an EL display device and an electronic device furnished with the EL display device is taken as an objective. A textured structure in which projecting portions are formed on the surface of a cathode is used. External stray light is diffusely (irregularly) reflected by the action of the projecting portions when reflected by the surface of the cathode, and therefore a defect in which the face of an observer or the surrounding scenery is reflected in the surface of the cathode can be prevented. This can be completed without using a conventionally necessary high price circular polarizing film, and therefore it is possible to reduce the cost of manufacturing the EL display device.10-04-2012
20120132920Organic Light Emitting Display Device and Method for Manufacturing the Same - In an organic light emitting diode (OLED) display and a manufacturing method, an organic light emitting diode (OLED) display includes: a substrate; a semiconductor layer pattern formed on the substrate and including a first capacitor electrode; a gate insulating layer covering the semiconductor layer pattern; a first conductive layer pattern formed on the gate insulating layer and including a second capacitor electrode having at least a portion overlapping the first capacitor electrode; an interlayer insulating layer having a capacitor opening exposing a portion of the second capacitor electrode and covering the second capacitor electrode; and a second conductive layer pattern formed on the interlayer insulating layer, wherein the capacitor opening includes a first transverse side wall parallel to and overlapping the second capacitor electrode, a second transverse side wall parallel to and not overlapping the second capacitor electrode, and a longitudinal side wall connecting the first transverse side wall and the second transverse side wall to each other and overlapping the first capacitor electrode.05-31-2012
20110175102LIGHT-EMITTING DEVICE, FLEXIBLE LIGHT-EMITTING DEVICE, ELECTRONIC DEVICE, LIGHTING APPARATUS, AND METHOD OF MANUFACTURING LIGHT-EMITTING DEVICE AND FLEXIBLE-LIGHT EMITTING DEVICE - An object is to provide a light-emitting device or a flexible light-emitting device having low surface temperature, a long lifetime, and high reliability. Another object is to provide a simple method of manufacturing the light-emitting device or the flexible light-emitting device. Provided is a light-emitting device or a flexible light-emitting device which includes: a substrate having a light-transmitting property with respect to visible light; a first adhesive layer provided over the substrate; an insulating layer located over the first adhesive layer; a light-emitting element comprising a first electrode formed over the insulating layer, a second electrode facing the first electrode, and a layer including an organic compound having a light-emitting property between the first electrode and the second electrode, a second adhesive layer formed over the second electrode; a metal substrate provided over the second adhesive layer; and a heat radiation material layer formed over the metal substrate.07-21-2011
20090057682ACTIVE MATRIX SUBSTRATE, DISPLAY DEVICE, TELEVISION RECEIVER, MANUFACTURING METHOD OF ACTIVE MATRIX SUBSTRATE, FORMING METHOD OF GATE INSULATING FILM - In an active matrix substrate of the present invention, a gate insulating film for covering a gate electrode of each transistor has a thin portion, having a reduced film thickness, which is provided on a part overlapped on the gate electrode, and the thin portion is formed by using the gate electrode, on which the thin portion is overlapped, as a mask, and each transistor has a first drain electrode section and a second drain electrode section which are respectively provided on both sides of a source electrode, and the thin portion has two edges opposite to each other, and the first drain electrode section is overlapped on the one edge, and the second drain electrode section is overlapped on the other edge. This makes it possible to provide an active matrix substrate which realizes high display quality while suppressing unevenness of parasitic capacitances (particularly, Cgd) of TFTs in the active matrix substrate whose each TFT has a thin portion in its gate insulating film.03-05-2009
20090057683Semiconductor Device and Method of Manufacturing The Semiconductor Device - In a semiconductor device, a first interlayer insulating layer made of an inorganic material and formed on inverse stagger type TFTs, a second interlayer insulating layer made of an organic material and formed on the first interlayer insulating layer, and a pixel electrode formed in contact with the second interlayer insulating layer are disposed on a substrate, and an input terminal portion that is electrically connected to a wiring of another substrate is provided on an end portion of the substrate. The input terminal portion includes a first layer made of the same material as that of the gate electrode and a second layer made of the same material as that of the pixel electrode. With this structure, the number of photomasks used in the photolithography method can be reduced to 5.03-05-2009
20100051957THIN FILM TRANSISTOR ARRAY PANEL - A thin film transistor array panel, in which a middle storage electrode and a storage electrode overlapping a drain electrode of a thin film transistor thereby forming a storage capacitance are formed. Accordingly, sufficient storage capacitance may be formed without a decrease of the aperture ratio and fight transmittance of a liquid crystal display. Also, the capacitance may be sufficiently formed through the connecting member connected to a gate metal layer.03-04-2010
20100051959CIRCUIT BOARD AND DISPLAY DEVICE - The present invention provides a circuit board that includes high-performance thin film transistors whose characteristics are hardly varied thereamong in a monolithic circuit and also provide a display device including the circuit board. The circuit board of the present invention is a circuit board including a monolithic circuit including a thin film transistor on a substrate, wherein the thin film transistor includes a semiconductor layer, a gate insulating film, and a gate electrode, stacked in this order, a portion where the gate electrode overlaps with the semiconductor layer has an area of 40 μm03-04-2010
20100051958DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A display device includes an insulation substrate on which TFT elements, first electrodes, light emitting layers and a second electrode are stacked in this order. Auxiliary lines are arranged between the insulation substrate and the second electrodes, and an insulation layer is interposed between the auxiliary lines and the second electrode. The auxiliary lines and the second electrode are connected with each other via contact holes formed in the insulation layer. Due to such a constitution, it is possible to enhance image quality of an organic EL display device.03-04-2010
20100051956THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME - A thin film transistor array panel includes a substrate; a first gate line disposed on the substrate and including a gate electrode; a storage electrode disposed in a layer which is the same layer as a layer of the first gate line; a gate insulating layer disposed on the first gate line and the storage electrode; a semiconductor disposed on the gate insulating layer and including a channel portion; a data line disposed on the semiconductor and including a source electrode; a drain electrode disposed on the semiconductor and facing the source electrode; a passivation layer disposed on the gate insulating layer, the data line, and the drain electrode, the passivation layer including a contact hole which exposes a portion of the drain electrode; and a pixel electrode disposed on the passivation layer and electrically connected to the drain electrode through the contact hole, wherein the gate insulating layer and the passivation layer are interposed between the pixel electrode and the substrate except for a region corresponding to the contact hole, and wherein the pixel electrode overlaps the storage electrode via the gate insulating layer and the passivation layer.03-04-2010
20100276695DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - It is an object of the present invention to prevent an influence of voltage drop due to wiring resistance, trouble in writing of a signal into a pixel, and trouble in gray scales, and provide a display device with higher definition, represented by an EL display device and a liquid crystal display device.11-04-2010
20120175627Dual Gate Layout for Thin Film Transistor - A dual gate layout of a thin film transistor of liquid crystal display to alleviate dark current leakage is disclosed. The layout includes (1) a polysilicon on a substrate having a shaped of L- or of snake from top-view, having a heavily doped source region, a first lightly doped region, a first gate channel, a second lightly doped region, a second gate channel, a third lightly doped region and a heavily doped drain region formed in order therein; (2) a gate oxide layer formed on the poly-Si layer and the substrate, (3) a gate metal layer then formed on the gate oxide layer having a scanning line and an extension portion with a L-shaped or an I-shaped. The gate metal intersects with the poly-Si layer thereto define the forgoing gate channels. Among of gate channels, at least one is along the signal line through a source contact.07-12-2012
20120074423EL DISPLAY PANEL, EL DISPLAY APPARATUS, AND METHOD OF MANUFACTURING EL DISPLAY PANEL - An EL display panel includes an organic EL device and a thin film semiconductor unit. The organic EL device includes a lower electrode, an organic light-emitting layer, and an upper electrode. The thin film semiconductor unit includes a first gate electrode, a gate insulating film, a first source electrode, a second drain electrode formed in a same layer as the first source electrode, a first power supply line formed in a same layer as the second drain electrode, and a first interlayer insulating film formed on the first source electrode and the second drain electrode. A gate line connected to the first gate electrode, a second power supply line formed in a same layer as the gate line and connected to the first power supply line, and an auxiliary line formed in a same layer as the second power supply line and connected to the upper electrode are included.03-29-2012
20120074422THIN-FILM TRANSISTOR ARRAY DEVICE, EL DISPLAY PANEL, EL DISPLAY DEVICE, THIN-FILM TRANSISTOR ARRAY DEVICE MANUFACTURING METHOD, EL DISPLAY PANEL MANUFACTURING METHOD - A thin-film transistor array device includes a passivation film above first and second bottom gate transistors. A gate wire is below the passivation film. A source wire and a relay wire are above the passivation film. The source wire is electrically connected to a source electrode of the first transistor via a first hole in the passivation film. A conductive oxide film is between the passivation film and both the source wire and the relay electrode and not electrically connected between the source wire and the relay electrode. The conductive oxide film covers an end portion of the gate wire that is exposed via a second hole in the passivation film. The conductive oxide film is between the relay electrode and a current-supply electrode of the second transistor and electrically connects the relay electrode and the current-supply electrode via a third hole in the passivation film.03-29-2012
20120074421THIN-FILM TRANSISTOR ARRAY DEVICE, EL DISPLAY PANEL, EL DISPLAY DEVICE, THIN-FILM TRANSISTOR ARRAY DEVICE MANUFACTURING METHOD, EL DISPLAY PANEL MANUFACTURING METHOD - A thin-film transistor array device includes a passivation film above first and second bottom gate transistors. A source wire is below the passivation film. A gate wire and a relay electrode are above the passivation film. The gate wire is electrically connected to a gate electrode of the first transistor via a first hole in the passivation film. A conductive oxide film is between the passivation film and both the gate wire and the relay electrode and not electrically connected between the gate wire and the relay electrode. The conductive oxide film covers an end portion of the source wire that is exposed via a second hole in the passivation film. The conductive oxide film is between the relay electrode and a current-supply electrode of the second transistor and electrically connects the relay electrode and the current-supply electrode via a third hole in the passivation film.03-29-2012
20120074420Organic light emitting diode display and manufacturing method thereof - An organic light emitting diode (OLED) display includes: a substrate; a semiconductor layer on the substrate; a gate insulating layer covering the semiconductor layer; a gate electrode formed in the gate insulating layer and overlapping the semiconductor layer; a pixel electrode formed in a pixel area over the gate insulating layer; an interlayer insulating layer covering the gate electrode and the gate insulating layer, and exposing the pixel electrode through a pixel opening; a source electrode and a drain electrode formed in the interlayer insulating layer and connected to the semiconductor layer; and a barrier rib covering the interlayer insulating layer, the source electrode, and the drain electrode, and the drain electrode contacts a side wall of the pixel opening and is connected to the pixel electrode. Such an OLED display may have an improved aperture ratio.03-29-2012
20100006853ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME - An electronic device includes: a substrate; and a plurality of thin film transistors disposed in lines at least in one direction in terms of planar view when viewed from one principal surface of the substrate; each of the plurality of thin film transistors including a preliminary heating layer on the substrate, an insulating layer on the preliminary heating layer, and a thin film semiconductor layer a part of which overlaps the preliminary heating layer through the insulating film, wherein a portion of the preliminary heating layer other than the portion overlapping the thin film semiconductor layer has a planar shape which is line-symmetrical with respect to an axis extending in a direction perpendicularly intersecting the one direction.01-14-2010
20100006852Thin film transistor and method of fabricating the same - A thin film transistor includes a substrate; a semiconductor layer disposed on the substrate, the semiconductor layer having a source region, a drain region, and a channel region between the source region and the drain region; a gate insulating layer disposed on the semiconductor layer and on the substrate; and a gate electrode disposed on the insulating layer over the channel region, wherein the semiconductor layer includes tapered edge portions with a taper angle defined between the tapered edge portions and a surface of the substrate is less than about 30 degrees.01-14-2010
20100244039PIXEL STRUCTURE - A pixel structure includes a patterned semiconductor layer disposed on a transistor region of the substrate, a first capacitor electrode disposed on a capacitor region of the substrate, a gate dielectric layer disposed on the first capacitor electrode, a gate disposed on a channel region of the patterned semiconductor layer, a second capacitor electrode, a dielectric layer, and an aluminum capacitor electrode sequentially disposed on the gate dielectric layer of the capacitor region, a first dielectric layer disposed on the gate and the aluminum capacitor electrode, at least one first wire disposed in the first dielectric layer for electrically connecting source/drain region of the patterned semiconductor layer and the aluminum capacitor electrode, a second dielectric layer disposed on the first wire, and a first transparent conductive layer disposed on the second dielectric layer and connected to the first wire.09-30-2010
20100244038THIN FILM TRANSISTOR AND FABRICATING METHOD OF THE SAME - Provided are thin film transistor, a method of fabricating the same, a flat panel display device including the same, and a method of fabricating the flat panel display device, that are capable of applying an electric field to a gate line to form a channel region of a semiconductor layer of a thin film transistor using a polysilicon layer crystallized by a high temperature heat generated by Joule heating of a conductive layer. As a result, a process can be simplified using a gate line included in the thin film transistor as the conductive layer, and the channel region of the semiconductor layer can be formed of polysilicon having a uniform degree of crystallinity. The thin film transistor includes a straight gate line disposed in one direction, a semiconductor layer crossing the gate line, and source and drain electrodes connected to source and drain regions of the semiconductor layer.09-30-2010
20120181545SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME, AND DISPLAY DEVICE PROVIDED WITH SEMICONDUCTOR DEVICE - A thin film diode (07-19-2012
20100001286THIN FILM TRANSISTOR ARRAY SUBSTRATE AND FABRICATING METHOD THEREOF - A TFT array substrate is disclosed. In the pixel structure of the TFT array substrate, patterned transparent conductive layers are disposed under a first metal layer (M01-07-2010
20120223316THIN FILM TRANSISTOR AND DISPLAY DEVICE - Disclosed is a thin film transistor wherein an ON current is increased and a leak current is reduced. The channel layer 09-06-2012
20120187411Semiconductor Device and Method for Manufacturing the Same - An object of the present invention is to prevent the deterioration of a TFT (thin film transistor). The deterioration of the TFT by a BT test is prevented by forming a silicon oxide nitride film between the semiconductor layer of the TFT and a substrate, wherein the silicon oxide nitride film ranges from 0.3 to 1.6 in a ratio of the concentration of N to the concentration of Si.07-26-2012
20090166640Copper wire, method for fabricating the same, and thin film transistor substrate with the same - The present invention relates to a copper wire in a semiconductor device in which a barrier layer is formed for improving adhesion of a copper wire without any additional fabricating step; a method for fabricating the same, and a flat panel display device with the same. The copper wire includes a barrier layer formed on an underlying structure, and a copper conductive layer on the barrier layer, wherein the barrier layer includes at least one of a Cu07-02-2009
20090020762DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - To achieve promotion of stability of operational function of display device and enlargement of design margin in circuit design, in a display device including a pixel portion having a semiconductor element and a plurality of pixels provided with pixel electrodes connected to the semiconductor element on a substrate, the semiconductor element includes a photosensitive organic resin film as an interlayer insulating film, an inner wall face of a first opening portion provided at the photosensitive organic resin film is covered by a second insulating nitride film, a second opening portion provided at an inorganic insulating film is provided on an inner side of the first opening portion, the semiconductor and a wiring are connected through the first opening portion and the second opening portion and the pixel electrode is provided at a layer on a lower side of an activation layer.01-22-2009
20120256186ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - Disclosed is an organic light-emitting display device including a transparent substrate which includes a display portion and a pad portion formed in a region around the display portion, a first semiconductor layer formed on the display portion, a second semiconductor layer formed on the pad portion, and a transparent electrode formed on each of the first the second semiconductor layers, where the first and second semiconductor layers include the same material.10-11-2012
20120261671DISPLAY DEVICE AND MANUFACTURING METHOD OF THE DISPLAY DEVICE - It is an object of the present invention to provide a technique to manufacture a highly reliable display device at a low cost with high yield. A display device according to the present invention includes a semiconductor layer including an impurity region of one conductivity type; a gate insulating layer, a gate electrode layer, and a wiring layer in contact with the impurity region of one conductivity type, which are provided over the semiconductor layer; a conductive layer which is formed over the gate insulating layer and in contact with the wiring layer; a first electrode layer in contact with the conductive layer; an electroluminescent layer provided over the first electrode layer; and a second electrode layer, where the wiring layer is electrically connected to the first electrode layer with the conductive layer interposed therebetween.10-18-2012
20120261670BACK-SIDE ILLUMINATED IMAGE SENSOR WITH A JUNCTION INSULATION - A method for forming a back-side illuminated image sensor, including the steps of: a) forming, from the front surface, doped polysilicon regions, of a conductivity type opposite to that of the substrate, extending in depth orthogonally to the front surface and emerging into the first layer; b) thinning the substrate from its rear surface to reach the polysilicon regions, while keeping a strip of the first layer; c) depositing, on the rear surface of the thinned substrate, a doped amorphous silicon layer, of a conductivity type opposite to that of the substrate; and d) annealing at a temperature capable of transforming the amorphous silicon layer into a crystallized layer.10-18-2012
20120228624IMAGE DISPLAY DEVICE - The image display device according to the present invention is an image display device where a pixel unit and an external connection terminal unit are provided on a substrate (SUB), and the pixel unit and the external connection terminal unit are connected by an aluminum wire (LN), having; an organic protective film (OPAS) directly covering the aluminum wire, except a contact hole (CH) of the external connection terminal unit and part of the pixel unit; and an ITO film (ITO) provided on the upper side of the organic protective film so as to cover the aluminum wire, including the external connection terminal unit and reaching to the pixel unit.09-13-2012
20120228623DISPLAY DEVICE AND ELECTRONIC DEVICE - Disclosed herein is a display device including: a thin film transistor; and a wiring layer; wherein the thin film transistor includes a semiconductor layer, a gate electrode disposed so as to be opposed to the semiconductor layer, the gate electrode being different in thickness from the wiring layer, and a gate insulating film between the semiconductor layer and the gate electrode.09-13-2012
20080303029Structure, Semiconductor Device, Tft Driving Circuit, Panel, Display and Sensor for Maintaining Microstructure, Methods for Fabricating the Structure, the Semiconductor Device, the Tft Driving Circuit, the Panel, the Display and the Sensor - A method for fabricating a structure according to the present invention includes the steps of: forming a groove in a substrate, dropping a solution in which microstructures such as nanowires are dispersed into the groove and the step of evaporating the solution to arrange the microstructures in the groove in a self-organizing manner.12-11-2008
20110121309METHOD OF FABRICATING POLYSILICON LAYER, THIN FILM TRANSISTOR, ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE SAME, AND METHOD OF FABRICATING THE SAME - A method of fabricating an organic light emitting diode (OLED) display device having a thin film transistor including a polysilicon layer. The method of fabricating a polysilicon layer includes forming a buffer layer on a substrate, forming a metal catalyst layer on the buffer layer, diffusing a metal catalyst into the metal catalyst layer to the buffer layer, removing the metal catalyst layer, forming an amorphous silicon layer on the buffer layer, and annealing the substrate to crystallize the amorphous silicon layer into a polysilicon layer. The thin film transistor includes a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate insulating layer disposed above the substrate and on the semiconductor layer, a gate electrode disposed on the gate insulating layer, a source electrode and a drain electrode both electrically connected to the semiconductor layer, and a metal silicide disposed between the buffer layer and the semiconductor layer.05-26-2011
20080296583Display Device And Manufacturing Method of The Same - A display device includes a capacitive element configured so that a portion of a semiconductor layer which is made conductive constitutes one electrode, an insulation film which covers the semiconductor layer constitutes a dielectric film, and a conductive layer which includes a portion which is formed over the insulation film and is overlapped to the one electrode constitutes another electrode. The conductive layer has an extension portion which extends outside of a region where the semiconductor layer is formed from the inside of the region where the semiconductor layer is formed, and is formed over the insulation film. The insulation film has, in a region where the insulation film is overlapped to both the semiconductor layer and the extension portion of the conductive layer, a film thickness which is larger than a film thickness at a portion thereof which is overlapped to the one electrode.12-04-2008
20100327290MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF DISPLAY DEVICE, SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND ELECTRONIC DEVICE - A method for manufacturing a semiconductor device provided with a circuit capable of high speed operation while the manufacturing cost is reduced. A method for manufacturing a semiconductor device which includes forming an ion-doped layer at a predetermined depth from a surface of a single-crystal semiconductor substrate and forming a first insulating layer over the single-crystal semiconductor substrate; forming a second insulating layer over part of an insulating substrate and forming a non-single-crystal semiconductor layer over the second insulating layer; bonding the single-crystal semiconductor substrate to a region of the insulating substrate where the second insulating layer is not formed, with the first insulating layer interposed therebetween; and forming a single-crystal semiconductor layer over the insulating substrate by separating the single-crystal semiconductor substrate at the ion-doped layer which acts as a separation surface so that the ion-doped layer is separated from the insulating substrate.12-30-2010
20100327289FLAT DISPLAY PANEL, UV SENSOR AND FABRICATION METHOD THEREOF - A UV sensor comprises a silicon-rich dielectric layer with a refractive index in a range of about 1.7 to about 2.5 for serving as the light sensing material of the UV sensor. The fabrication method of the UV sensor can be integrated with the fabrication process of semiconductor devices or flat display panels.12-30-2010
20120319122ORGANIC LIGHT-EMITTING DISPLAY DEVICE INCLUDING BLACK MATRIX-CONTAINING NEUTRAL DENSITY FILM - An organic light-emitting display device including: a substrate; a plurality of pixels each including a first electrode, a second electrode, and an organic emission layer interposed between the first electrode and the second electrode; and a black matrix-containing neutral density (ND) film formed in a direction in which light is emitted from the plurality of pixels.12-20-2012
20120319123Display Device and Method of Manufacturing the Same - A display device may include a first substrate comprising a display region and a non-display region surrounding the display region, a first metal wiring formed in the display region of the first substrate, a second metal wiring formed in the non-display region of the first substrate, a sealing member formed on the second metal wiring, and a second substrate disposed on the sealing member so as to face the first substrate. The first metal wiring and the second wiring are made of the same material.12-20-2012
20110037074Thin film transistor method of fabricating the same, and organic light emitting diode dislplay device having the same - A thin film transistor includes a substrate, a buffer layer on the substrate, a semiconductor layer on the buffer layer, source and drain electrodes directly on the semiconductor layer, each of the source and drain electrodes including at least one hole therethrough, a gate insulating layer on the substrate, and a gate electrode on the gate insulating layer and corresponding to the semiconductor layer.02-17-2011
20120299009Method of Manufacturing Thin Film Transistor - The object of the present invention is to form a low-concentration impurity region with good accuracy in a top gate type TFT. Phosphorus is added to a semiconductor layer by using a pattern made of a conductive film as a mask to form an N-type impurity region in a self-alignment manner. A positive photoresist is applied to a substrate so as to cover the pattern and then is exposed to light applied to the back of the substrate and then is developed, whereby a photoresist 11-29-2012
20120299008LIQUID CRYSTAL DISPLAY DEVICE - Techniques are provided for unifying steps of sealing material so that the yield and the reliability of a liquid-crystal display device become high. A starting film of scanning lines is patterned so that prismatic dummy wirings 11-29-2012
20120299007THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THIN FILM TRANSISTOR, AND ORGANIC LIGHT EMITTING DIODE DISPLAY - There is provided a thin film transistor including an active layer on a substrate (the active layer including polysilicon and a metal catalyst dispersed in the polysilicon, a source area, a drain area, and a channel area), a gate electrode disposed on the channel area of the active layer, a source electrode electrically connected to the source area, and a drain electrode electrically connected to the drain area, wherein the gate electrode, the source area, and the drain area of the active layer include metal ions, the source area and the drain area are separate from each other, and the channel is disposed between the source area and the drain area.11-29-2012
20120267635THIN FILM TRANSISTOR SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND DISPLAY APPARATUS HAVING THE SAME - In a method of manufacturing a thin film transistor substrate, a semiconductor pattern is formed on a substrate, a first etch stop layer and a second etch stop layer are sequentially formed on the semiconductor pattern, and the second etch stop layer and the first etch stop layer are sequentially patterned to form a second etch stop pattern and a first etch stop pattern. Thus, when the second etch stop layer is patterned using an etchant, the first etch stop layer covers the semiconductor pattern, thereby preventing the semiconductor pattern from being etched by the etchant.10-25-2012
20120319124THIN FILM TRANSISTOR SUBSTRATE AND LIQUID CRYSTAL DISPLAY DEVICE HAVING THE SAME - A display device with a display region and a non-display region surrounding the display region, the display device comprising: a first substrate and a second substrate. The first substrate comprises: a first insulating substrate; a gate line formed on the first insulating substrate; a pixel thin film transistor formed on the display region and electrically connected to the gate line; a pixel electrode electrically connected to the pixel thin film transistor; a gate driver formed on the non-display region and connected to the gate line; and a direct current (DC)/DC converter formed on the non-display region and having a capacitance part. The capacitance part includes: a first capacitance part with a first electrode, a first dielectric layer, and a second electrode; and a second capacitance part with the second electrode, a second dielectric layer, and a third electrode.12-20-2012
20120080685Semiconductor Device and Method of Fabricating the Same - An active matrix display device having a pixel structure in which pixel electrodes, gate wirings and source wirings are suitably arranged in the pixel portions to realize a high numerical aperture without increasing the number of masks or the number of steps. The device comprises a gate electrode and a source wiring on an insulating surface, a first insulating layer on the gate electrode and on the source wiring, a semiconductor layer on the first insulating film, a second insulating layer on the semiconductor film, a gate wiring connected to the gate electrode on the second insulating layer, a connection electrode for connecting the source wiring and the semiconductor layer together; and a pixel electrode connected to the semiconductor layer.04-05-2012
20120080684THIN FILM TRANSISTOR AND FLAT PANEL DISPLAY DEVICE INCLUDING THE SAME - A thin film transistor (TFT) and a flat panel display device including the same. The TFT includes a substrate, a gate electrode formed over the substrate, the gate electrode formed with silicon doped with impurities, a gate wiring connected to the gate electrode, an active layer formed over the gate electrode, and source and drain electrodes connected to the active layer. According to such a structure, since heat flow to the gate electrode during crystallization of the active layer may be prevented, stable crystallization of the active layer may be performed, and thus an error rate of a product may be decreased.04-05-2012
20120326158FLAT PANEL DISPLAY AND METHOD OF MANUFACTURING THE SAME - A flat panel display having a thin-film transistor (TFT) and a pixel unit and a method of manufacturing the same are disclosed. In one embodiment, the method includes forming a step difference layer having a relatively high step and a relatively low step on a substrate and forming an amorphous silicon layer on the step difference layer along a height shape of the step difference layer. The method further includes crystallizing the amorphous silicon layer into a crystalline silicon layer and polishing the crystalline silicon layer to form a planarized surface of the crystalline silicon layer having no height differences so that the crystalline silicon layer remains on a region corresponding to the low step and an active layer is formed. According to this method, crystallization protrusions are effectively removed from the active layer, and thus, stable brightness characteristics of the display apparatus are guaranteed.12-27-2012
20120326157Method of Manufacturing Thin Film Transistor, Thin Film Transistor Manufactured Using the Method, Method of Manufacturing Organic Light-Emitting Display Apparatus, and Organic Light-Emitting Display Apparatus Manufactured Using the Method - A method of manufacturing a TFT, including forming a buffer layer, an amorphous silicon layer, an insulating layer, and a first conductive layer on a substrate, forming a polycrystalline silicon layer by crystallizing the amorphous silicon layer, forming a semiconductor layer, a gate insulating layer, and a gate electrode that have a predetermined shape by simultaneously patterning the polycrystalline silicon layer, the insulating layer, and the first conductive layer, wherein the polycrystalline silicon layer is further etched to produce an undercut recessed a distance compared to sidewalls of the insulating layer and the first conductive layer, forming source and drain regions within the semiconductor layer by doping corresponding portions of the semiconductor layer, forming an interlayer insulating layer on the gate electrode, the interlayer insulating layer covering the gate insulating layer and forming source and drain electrodes that are electrically connected to source and drain regions respectively.12-27-2012
20120286281ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display device includes a thin film transistor (TFT) including an active layer, a gate electrode comprising a first electrode and a second electrode, a source electrode, and a drain electrode, a photoresist layer on the source electrode and the drain electrode, a pixel electrode electrically coupled to the TFT, comprising a same material as the first electrode, and at a same layer as the first electrode, a pixel defining layer having a hole exposing the pixel electrode, the pixel defining layer covering the photoresist layer, an intermediate layer on the pixel electrode and comprising a light-emitting layer, and an opposite electrode covering the intermediate layer and facing the pixel electrode.11-15-2012
20120286282THIN-FILM TRANSISTOR DEVICE MANUFACTURING METHOD, THIN-FILM TRANSISTOR DEVICE, AND DISPLAY DEVICE - A thin-film transistor device manufacturing method for forming a crystalline silicon film of stable crystallinity using a visible wavelength laser includes: a process of forming a plurality of gate electrodes above a substrate; a process of forming a silicon nitride layer on the plurality of gate electrodes; a process of forming a silicon oxide layer on the silicon nitride layer; a process of forming an amorphous silicon layer on the silicon oxide layer; a process of crystallizing the amorphous silicon layer using predetermined laser light to produce a crystalline silicon layer; and a process of forming a source electrode and a drain electrode on the crystalline silicon layer in a region that corresponds to each of the plurality of gate electrodes. A film thickness of the silicon oxide layer, a film thickness of the silicon nitride layer, and a film thickness of the amorphous silicon layer satisfy predetermined conditional expressions.11-15-2012
20130009162ORGANIC LIGHT-EMITTING DISPLAY DEVICE - An organic light-emitting display device may include a substrate; a plurality of thin film transistors (TFTs) on the substrate; a plurality of first electrodes respectively on the TFTs; a pixel-defining layer between the first electrodes, the pixel-defining layer including a covered portion and an uncovered portion; a plurality of organic layers respectively on the first electrodes, each organic layer including an emission layer; a second electrode covering at least a part of the organic layers and the pixel-defining layer, a portion of the pixel-defining layer covered by the second electrode defining the covered portion, wherein at least one outgassing hole is in the uncovered portion of the pixel-defining layer, the uncovered portion being an exposed area of the pixel-defining layer.01-10-2013
20130015459THIN FILM TRANSISTOR ARRAY SUBSTRATE, ORGANIC LIGHT-EMITTING DISPLAY DEVICE INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE ORGANIC LIGHT-EMITTING DISPLAY DEVICEAANM Lee; June-WooAACI Yongin-CityAACO KRAAGP Lee; June-Woo Yongin-City KRAANM Choi; Jae-BeomAACI Yongin-CityAACO KRAAGP Choi; Jae-Beom Yongin-City KRAANM Jung; Kwan-WookAACI Yongin-CityAACO KRAAGP Jung; Kwan-Wook Yongin-City KRAANM Oh; Jae-HwanAACI Yongin-CityAACO KRAAGP Oh; Jae-Hwan Yongin-City KRAANM Jin; Seong-HyunAACI Yongin-CityAACO KRAAGP Jin; Seong-Hyun Yongin-City KRAANM Kim; Kwang-HaeAACI Yongin-CityAACO KRAAGP Kim; Kwang-Hae Yongin-City KRAANM Choi; Jong-HyunAACI Yongin-CityAACO KRAAGP Choi; Jong-Hyun Yongin-City KR - A thin film transistor (TFT) array substrate includes a TFT on a substrate, the TFT including an active layer, gate electrode, source electrode, drain electrode, first insulating layer between the active layer and the gate electrode, and second insulating layer between the gate electrode and the source and drain electrodes; a pixel electrode on the first insulating layer and the second insulating layer, the pixel electrode being connected to one of the source electrode and drain electrode; a capacitor including a lower electrode on a same layer as the gate electrode and an upper electrode including the same material as the pixel electrode; a third insulating layer directly between the second insulating layer and the pixel electrode and between the lower electrode and the upper electrode; and a fourth insulating layer covering the source electrode, the drain electrode, and the upper electrode, and exposing the pixel electrode.01-17-2013
20100032679SEMICONDUCTOR DEVICE AND DISPLAY DEVICE - A thin film transistor whose threshold voltage can be controlled and which has a favorable switching characteristic is provided. The thin film transistor includes a first gate electrode layer; a semiconductor layer; a first gate insulating layer provided between the first gate electrode layer and the semiconductor layer; source electrode and drain electrode layers which are provided over the semiconductor layer; a conductive layer covered by the first gate insulating layer and the semiconductor layer and provided so as to overlap with part of the first gate electrode layer; a second gate insulating layer provided so as to cover at least a back channel portion of the semiconductor layer; and a second gate electrode layer provided over the second gate insulating layer so as to overlap with the back channel portion of the semiconductor layer.02-11-2010
20130020579Display Device - A display device which can suppress waveform distortion and lowered transmission coefficient of pixels, and suppress display irregularity is provided. In a display device having pixels arranged in a delta arrangement, a pixel includes a pixel portion which comprises a TFT including a source electrode, a drain electrode and a gate electrode, a common electrode and a pixel electrode, an organic passivation film has asymmetrical opening portions above a contact portion of the source electrode, and the orientations of the asymmetrical opening portions in the organic passivation films of pixels adjacent to each other are the same.01-24-2013
20100090224THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE HAVING THE THIN FILM TRANSISTOR - A thin film transistor (TFT), a method of fabricating the same, and an organic light emitting diode (OLED) display device having the TFT, the TFT includes a substrate, a protection layer disposed on the substrate, a buffer layer disposed on the protection layer, a semiconductor layer disposed on the buffer layer, a gate electrode disposed on the semiconductor layer, a gate insulating layer to electrically insulate the semiconductor layer from the gate electrode, and source and drain electrodes electrically insulated from the gate electrode and connected to the semiconductor layer. The protection layer is formed of an amine-containing clay. The OLED includes the TFT, an insulating layer disposed on the TFT, a first electrode connected to the drain electrode of the TFT, an organic layer disposed on the first electrode, and a second electrode disposed on the organic layer.04-15-2010
20080224147THIN FILM TRANSISTOR, DISPLAY DEVICE USING THEREOF AND METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR AND THE DISPLAY DEVICE - A thin film transistor includes a gate electrode, a gate insulating film formed to cover the gate electrode, a semiconductor layer including a channel region formed over the gate electrode, a source electrode and a drain electrode including a region connected to the semiconductor layer, where at least a part of the region is overlapped with the gate electrode, an upper insulating film formed to cover the semiconductor layer, the source electrode and the drain electrode, where the upper insulating film is directly in contact with the channel region of the semiconductor layer and discharges moisture by a heat treatment and a second upper insulating film formed to cover the first protective film and suppress moisture out-diffusion.09-18-2008
20080224146Semiconductor Apparatus, Solid State Image Pickup Device Using the Same, and Method of Manufacturing Them - The invention provides a semiconductor apparatus provided with at least one set of buried channel type first conductive type MOS transistor and surface channel type first conductive type MOS transistor on the same substrate, in which a first conductive type impurity region is provided below a gate electrode of the buried channel type and surface channel type MOS transistors and between source drain regions. Further, the invention provides a solid state image pickup device having a photoelectric conversion portion and a pixel including a plurality of transistors formed in correspondence to the photoelectric conversion portion, in a substrate, wherein the plurality of transistors includes a buried channel type first conductive type MOS transistor and a surface channel type first conductive type MOS transistor, and a first conductive type impurity region is provided below a gate electrode of the buried channel type and surface channel type MOS transistors and between source drain regions.09-18-2008
20130175536EL DISPLAY DEVICE, DRIVING METHOD THEREOF, AND ELECTRONIC EQUIPMENT PROVIDED WITH THE EL DISPLAY DEVICE - An EL display device capable of performing clear multi-gradation color display and electronic equipment provided with the EL display device are provided, wherein gradation display is performed according to a time-division driving method in which the luminescence and non-luminescence of an EL element (07-11-2013
20130112984FLEXIBLE DISPLAY APPARATUS - A flexible display apparatus is disclosed. The flexible display apparatus includes: a substrate on which a display unit for displaying an image, a non-display area formed outside the display unit, and at least one pad for inputting an electrical signal to the display unit are located; and a circuit board including circuit terminals to be electrically connected to the at least one pad. A stiffener including a plurality of reinforcement lines that are patterned to reduce or prevent thermal deformation of the substrate is formed on the substrate.05-09-2013
20130134431THIN-FILM TRANSISTOR ARRAY MANUFACTURING METHOD, THIN-FILM TRANSISTOR ARRAY, AND DISPLAY DEVICE - Preparing a substrate; forming a plurality of gate electrodes above the substrate; forming a gate insulating layer above the gate electrodes; forming an amorphous silicon layer above the gate insulating layer; forming crystalline silicon layer regions by irradiating the amorphous silicon layer in regions above the gate electrodes with a laser beam having a wavelength from 473 nm to 561 nm so as to crystallize the amorphous silicon layer in the regions above the gate electrodes, and forming an amorphous silicon layer region in a region other than the regions above the gate electrodes; and forming source electrodes and drain electrodes above the crystalline silicon layer regions are included, and a thickness of the gate insulating layer and a thickness of the amorphous silicon layer satisfy predetermined expressions.05-30-2013
20130134432SEMICONDUCTOR DEVICE, AND METHOD OF FABRICATING THE SAME - A multi-layered gate electrode of a crystalline TFT is constructed as a clad structure formed by deposition of a first gate electrode, a second gate electrode and a third gate electrode, to thereby to enhance the thermal resistance of the gate electrode. Additionally, an n-channel TFT is formed by selective doping to form a low-concentration impunty region which adjoins a channel forming region, and a sub-region overlapped by the gate electrode and a sub-region not overlapped by the gate electrode, to also mitigate a high electric field near the drain of the TFT and to simultaneously prevent the OFF current of the TFT from increasing.05-30-2013
20080197357DISPLAY PANEL AND MANUFACTURING METHOD - A display panel includes a semiconductor layer formed on a substrate, a first insulating layer formed on the semiconductor layer, a gate line including a gate electrode and formed on the first insulating layer, a second insulating layer formed on the gate line, and a data line including a source electrode and a drain electrode formed on the second insulating layer. The second insulating layer covered with the drain electrode and the data line may be thicker than the second insulating layer not covered with the drain electrode and the data line. The data conductors are disposed on a higher interlayer insulating layer than the others such that diffused or migrating aluminum material is placed on the lower interlayer insulating layer to be prevented from being connected to the data conductors.08-21-2008
20110220908Organic light emitting display device - An organic light emitting display device includes a substrate, a plurality of sub-pixels on the substrate, each sub-pixel including a first region configured to emit light and a second region configured to transmit external light, a plurality of thin film transistors disposed in the first region of the each sub-pixel, a plurality of first electrodes disposed in the first region of each sub-pixel and electrically connected to the thin film transistors, a first insulating layer on at least a portion of the first region of each sub-pixel to cover a portion of the first electrode, an organic emission layer on the first electrode, a second insulating layer on at least a portion of the second region of each sub-pixel, the second insulating layer including a plurality of openings therein, and a second electrode covering the organic emission layer, the first insulating layer, and the second insulating layer.09-15-2011
20110220906PIXEL STRUCTURE AND FABRICATION METHOD THEREOF - The present invention discloses pixel structures and fabrication methods thereof. The pixel includes a thin film transistor forming at a thin film transistor region and a storage capacitor forming at a pixel electrode region. The method includes: forming a gate conduction layer on a substrate; forming a gate insulation layer on the gate conduction layer; forming a source conduction layer and a drain conduction layer on the gate insulation layer, in which the drain conduction layer has an extension section extending to the pixel electrode region; forming a channel layer on the source conduction layer and the drain conduction layer; and forming a protection layer on the channel layer. The extension section and an electrode layer serve as the upper and lower electrode of the storage capacitor, respectively. Wherein the gate conduction layer, the source conduction layer, the drain conduction layer, and the channel layer are made of metallic oxides.09-15-2011
20130126883Wiring Material, Semiconductor Device Provided with a Wiring Using the Wiring Material and Method of Manufacturing Thereof - A semiconductor device having good TFT characteristics is realized. By using a high purity target as a target, using a single gas, argon (Ar), as a sputtering gas, setting the substrate temperature equal to or less than 300° C., and setting the sputtering gas pressure from 1.0 Pa to 3.0 Pa, the film stress of a film is made from −1×1005-23-2013
20100295053THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY DEVICE - The present invention provides a thin film transistor substrate and a display device in which a decrease in the dry etching rate of a source electrode and drain electrode is not caused; no etching residues are generated; and a barrier metal can be eliminated between a semiconductor layer and metal wires such as the source and drain electrodes. The present invention is a thin film transistor substrate having a semiconductor layer 11-25-2010
20100301346THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF, AND ELECTRONIC APPLIANCE - A thin film transistor in which an effect of photo current is small and an On/Off ratio is high is provided. In a bottom-gate bottom-contact (coplanar) thin film transistor, a channel formation region overlaps with a gate electrode, a first impurity semiconductor layer is provided between the channel formation region and a second impurity semiconductor layer which is in contact with a wiring layer. A semiconductor layer which serves as the channel formation region and the first impurity semiconductor layer preferably overlap with each other in a region where they overlap with the gate electrode. The first impurity semiconductor layer and the second impurity semiconductor layer preferably overlap with each other in a region where they do not overlap with the gate electrode.12-02-2010
20130187167THIN FILM TRANSISTOR ARRAY PANEL AND ORGANIC LIGHT EMITTING DIODE DISPLAY INCLUDING THE SAME, METHOD FOR CUTTING WIRE IN THIN FILM TRANSISTOR ARRAY PANEL - A thin film transistor display panel includes a plurality of pixels arranged in a matrix format, the plurality of pixels include thin film transistors, respectively, a plurality of first signal lines connected with the pixels, a plurality of second signal lines connected with the pixels, the plurality of second signal lines cross the first signal lines in an insulated manner, at least one of the second signal lines includes a cut portion, and an organic repairing member overlaps the cut portion07-25-2013
20130119392ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display device having a thin film transistor including an active layer, a gate electrode, a lower gate electrode, an upper gate electrode, an insulating layer covering the gate electrode, source and drain electrodes that are formed on the insulating layer and contact the active layer. An organic light-emitting diode is electrically connected to the thin film transistor and includes a pixel electrode formed at the same layer level as the lower gate electrode, an intermediate layer including an emission layer, and a counter electrode. A lower pad electrode is formed at the same layer level as the lower gate electrode and an upper pad electrode is formed at the same layer level as the upper gate electrode.05-16-2013
20110303923TFT, ARRAY SUBSTRATE FOR DISPLAY APPARATUS INCLUDING TFT, AND METHODS OF MANUFACTURING TFT AND ARRAY SUBSTRATE - A thin film transistor (TFT), an array substrate including the TFT, and methods of manufacturing the TFT and the array substrate. The TFT includes an active layer, and a metal member that corresponds to a portion of each of the source region and the drain region of the active layer, and is arranged on the active layer, a portion of the metal member contacts the source and drain regions of the active layer and the source and drain electrodes, and portions of the active layer that corresponds to portions below the metal member of the active layer are not doped.12-15-2011
20110309369LIQUID CRYSTAL DISPLAY DEVICE - Techniques are provided for unifying steps of sealing material so that the yield and the reliability of a liquid-crystal display device become high. A starting film of scanning lines is patterned so that prismatic dummy wirings 12-22-2011
20110315994DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a display device includes forming a gate electrode on a substrate, a gate insulating layer on the gate electrode, and an active layer on the gate insulating layer, the gate electrode made of extrinsic polycrystalline silicon, the active layer made of intrinsic polycrystalline silicon; forming an etch stopper on the active layer; forming source and drain electrodes spaced apart from each other on the etch stopper; forming an ohmic contact layer each between a side of the active layer and the source electrode and between an opposing side of the active layer and the drain electrode; forming a gate line connected to the gate electrode; and forming a data line crossing the gate line.12-29-2011
20120018731LIQUID CRYSTAL DISPLAY DEVICE - A liquid crystal display device includes a gate electrode formed on a substrate; a active pattern and an ohmic contact pattern formed to overlap with the gate electrode with a gate insulating film therebetween; a source electrode formed on the active pattern and the ohmic contact; a drain electrode formed to oppose the source electrode; a pixel electrode overlapped with the drain electrode and directly contacted with the drain electrode; a common electrode formed to overlap with the pixel electrode with a passivation film therebetween and having a plurality of holes; and wherein the plurality of holes of the common electrode are only formed on a region in which the pixel electrode is formed.01-26-2012
20120056188Organic light emitting diode display and manufacturing method thereof - The described technology relates generally to an OLED display and manufacturing method thereof. The OLED display includes a substrate, a thin film transistor on the substrate and including a semiconductor layer, a gate electrode, a source electrode, and a drain electrode, and an organic light emitting element coupled to the thin film transistor and including a pixel electrode, an organic emission layer, and a common electrode, wherein the semiconductor layer is formed of a polycrystalline silicon layer, and remnants and contaminants at a surface of the polycrystalline silicon layer are reduced or eliminated through an atmospheric pressure plasma treatment. The semiconductor layer is formed of a polycrystalline silicon layer where remnants and contaminants at the surface thereof are reduced or eliminated through an atmospheric pressure plasma treatment.03-08-2012
20130200385THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME - The present invention provides a thin film transistor (TFT) array substrate and a method for manufacturing the same. A transparent and electrically conductive layer and a first metal layer are deposited on a substrate, and a first multi tone mask is utilized to form gate electrodes and common electrodes. A gate insulating layer, a semiconductor layer and a second metal layer are deposited on the substrate, and a second multi tone mask is utilized to form source electrodes, drain electrodes and pixel electrodes. The present invention can simplify the manufacturing process thereof.08-08-2013
20120086013THIN FILM TRANSISTOR, ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF - A thin film transistor is provided, which comprises at least an active layer, a source electrode and a drain electrode, wherein the source electrode and the drain electrode are located on the active layer and spaced apart from each other; a channel is defined in the active layer between the source electrode and the drain electrode; edges of the active layer are aligned with outer edges of the source electrode and the drain electrode, the outer edge of the source electrode is an edge of the source electrode opposite to the drain electrode, and the outer edge of the drain electrode is an edge of the drain electrode opposite to the source electrode. Also, a method of manufacturing a thin film transistor is provided.04-12-2012

Patent applications in class In array having structure for use as imager or display, or with transparent electrode