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Responsive to nonelectrical external signals (e.g., light)

Subclass of:

257 - Active solid-state devices (e.g., transistors, solid-state diodes)

257049000 - NON-SINGLE CRYSTAL, OR RECRYSTALLIZED, SEMICONDUCTOR MATERIAL FORMS PART OF ACTIVE JUNCTION (INCLUDING FIELD-INDUCED ACTIVE JUNCTION)

257052000 - Amorphous semiconductor material

Patent class list (only not empty are listed)

Deeper subclasses:

Class / Patent application numberDescriptionNumber of patent applications / Date published
257053000 Responsive to nonelectrical external signals (e.g., light) 89
20100133536MICROBOLOMETER INFRARED DETECTOR ELEMENTS AND METHODS FOR FORMING SAME - Microbolometer infrared detector elements that may be formed and implemented by varying type/s of precursors used to form amorphous silicon-based microbolometer membrane material/s and/or by varying composition of the final amorphous silicon-based microbolometer membrane material/s (e.g., by adjusting alloy composition) to vary the material properties such as activation energy and carrier mobility. The amorphous silicon-based microbolometer membrane material/s materials may include varying amounts of one or more additional and optional materials, including hydrogen, fluorine, germanium, n-type dopants and p-type dopants.06-03-2010
20110175086PHOTODIODE, MANUFACTURING METHOD FOR THE SAME, AND DISPLAY DEVICE INCLUDING PHOTODIODE - A photodiode (07-21-2011
20130043471Magnetic tunnel junction for MRAM applications - Reading margin is improved in a MTJ designed for MRAM applications by employing a pinned layer with an AP2/Ru/AP1 configuration wherein the AP1 layer is a CoFeB/CoFe composite and by forming a MgO tunnel barrier adjacent to the CoFe AP1 layer by a sequence that involves depositing and oxidizing a first Mg layer with a radical oxidation (ROX) process, depositing and oxidizing a second Mg layer with a ROX method, and depositing a third Mg layer on the oxidized second Mg layer. The third Mg layer becomes oxidized during a subsequent anneal. MTJ performance may be further improved by selecting a composite free layer having a Fe/NiFeHf or CoFe/Fe/NiFeHf configuration where the NiFeHf layer adjoins a capping layer in a bottom spin valve configuration. As a result, read margin is optimized simultaneously with improved MR ratio, a reduction in bit line switching current, and a lower number of shorted bits.02-21-2013
20110193087Photoelectric Conversion Device and Method for Manufacturing the Same - To provide a photoelectric conversion device with improved photoelectric conversion characteristics and cost competitiveness. A photoelectric conversion device including a semiconductor junction has a semiconductor layer in which a needle-like crystal is made to grow over an impurity semiconductor layer. The impurity semiconductor layer is formed of a microcrystalline semiconductor and includes an impurity imparting one conductivity type. An amorphous semiconductor layer is deposited on a microcrystalline semiconductor layer by setting the flow rate of a dilution gas (typically silane) to 1 time to 6 times the flow rate of a semiconductor source gas (typically hydrogen) at the time of deposition. Thus, a crystal with a three-dimensional shape tapered in a direction of the deposition of a film, i.e., in a direction from the microcrystalline semiconductor layer to the amorphous semiconductor layer is made to grow.08-11-2011
20130087789PHOTOELECTRIC CONVERSION DEVICE - A photoelectric conversion device with improved electric characteristics is provided. The photoelectric conversion device has a structure in which a window layer is formed by a stack of a first silicon semiconductor layer and a second silicon semiconductor layer, and the second silicon semiconductor layer has high carrier concentration than the first silicon semiconductor layer and has an opening. Light irradiation is performed on the first silicon semiconductor layer through the opening without passing through the second silicon semiconductor layer; thus, light absorption loss in the window layer can be reduced.04-11-2013
20120181537Magnetic Tunnel Junction for MRAM applications - A MTJ in an MRAM array is disclosed with a composite free layer having a lower crystalline layer contacting a tunnel barrier and an upper amorphous NiFeX layer for improved bit switching performance. The crystalline layer is Fe, Ni, or FeB with a thickness of at least 6 Angstroms which affords a high magnetoresistive ratio. The X element in the NiFeX layer is Mg, Hf, Zr, Nb, or Ta with a content of 5 to 30 atomic %. NiFeX thickness is preferably between 20 to 40 Angstroms to substantially reduce bit line switching current and number of shorted bits. In an alternative embodiment, the crystalline layer may be a Fe/NiFe bilayer. Optionally, the amorphous layer may have a NiFeM07-19-2012
20130048989TOUCH SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A touch substrate includes a base substrate, a sensing element and a switching element. The sensing element is disposed over the base substrate, senses infrared light, and includes a sensing semiconductor pattern. The switching element is electrically connected to the sensing element, includes a material substantially the same as a material of the sensing semiconductor pattern, and includes a switching semiconductor pattern having a thickness different from a thickness of the sensing semiconductor pattern.02-28-2013
20130056732DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A display device includes: a substrate; an infrared sensing transistor on the substrate; a readout transistor connected to the infrared sensing transistor; a power source line; and a light blocking member on the infrared sensing transistor, where the infrared sensing transistor includes a light blocking film on the substrate, a first gate electrode contacting and overlapping the light blocking film and connected to a power source line, a first semiconductor layer on the first gate electrode overlapping the light blocking film, and first source and drain electrodes on the first semiconductor layer, where the readout transistor includes a second gate electrode on the substrate, a second semiconductor layer on the second gate electrode and overlapping the second gate electrode, and second source and drain electrodes the second semiconductor layer, and where the power source line and the first gate electrode are at a same layer.03-07-2013
20130056733SENSOR AND METHOD OF PRODUCING A SENSOR - A sensor includes a substrate, a membrane, first and second spacers arranged on the substrate, a first support structure which is supported, laterally next to the membrane, by the first spacer and contacts a first electrode of a first main side of the membrane which faces the substrate, and a second support structure which is supported, laterally next to the membrane, by the second spacer and contacts a second electrode on a second main side of the membrane which is opposite the first main side, so that the membrane is suspended via the first and second spacers and is electrically connected to contact areas of the substrate.03-07-2013
20110012111MANUFACTURING METHOD OF MICRO-ELECTRO-MECHANICAL DEVICE - A method of forming a microstructure body and a semiconductor element for controlling the microstructure body over the same substrate to reduce manufacturing cost, for mass-production of micromachines having a microstructure. In manufacturing a micromachine, a sacrifice layer is formed using a mask material for forming a pattern of a film, and removal of the mask in a region for forming a semiconductor element and removal of the sacrifice layer and the mask in a region for forming a microstructure body are performed by the same step. Specifically, a manufacturing method of a micro-electro-mechanical device is provided wherein a sacrifice layer is selectively formed over an insulating substrate, a semiconductor layer is formed to cover the sacrifice layer, a mask is formed over the semiconductor layer, the semiconductor layer is etched using the mask, and the mask and the sacrifice layer are removed by the same step.01-20-2011
20100171119STACKED PHOTOELECTRIC CONVERSION DEVICE - To provide a stacked photoelectric conversion device capable of inhibiting extreme decrease of the output in the morning and evening.07-08-2010
20110297936SEMICONDUCTOR DEVICE AND DISPLAY DEVICE - A semiconductor device 12-08-2011
20110291090Photoelectric Conversion Device, Manufacturing Method Thereof And Semiconductor Device - A manufacturing method of a photoelectric conversion device includes the following steps: forming a first electrode over a substrate; and, over the first electrode, forming a photoelectric conversion layer that includes a first conductive layer having one conductivity, a second semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer over the first electrode. The manufacturing method further includes the step of removing a part of the second semiconductor layer and a part of the third semiconductor layer in a region of the photoelectric conversion layer so that the third semiconductor layer does not overlap the first electrode.12-01-2011
20090140249INTEGRATED CIRCUIT DEVICE AND METHOD FOR MANUFACTURING INTEGRATED CIRCUIT DEVICE - An object of the present invention is to provide a structure of a thin film circuit portion and a method for manufacturing a thin film circuit portion by which an electrode for connecting to an external portion can be easily formed under a thin film circuit. A stacked body including a first insulating film, a thin film circuit formed over one surface of the first insulating film, a second insulating film formed over the thin film circuit, an electrode formed over the second insulating film, and a resin film formed over the electrode, is formed. A conductive film is formed adjacent to the other surface of the first insulating film of the stacked body to be overlapped with the electrode. The conductive film is irradiated with a laser.06-04-2009
20120025189SENSOR ARRAY SUBSTRATE AND METHOD OF FABRICATING THE SAME - Provided are a sensor array substrate and a method of fabricating the same. The sensor array substrate includes: a substrate in which a switching element region and a sensor region that senses light are defined; a first semiconductor layer which is formed in the sensor region; a first gate electrode which is formed on the first semiconductor layer and overlaps the first semiconductor layer; a second gate electrode which is formed in the switching element region; a second semiconductor layer which is formed on the second gate electrode and overlaps the second gate electrode; and a light-blocking pattern which is formed on the second semiconductor layer and overlaps the second semiconductor layer, wherein the first semiconductor layer and the second semiconductor layer are disposed on different layers, and the second gate electrode and the light-blocking pattern are electrically connected to each other.02-02-2012
20100078637PHOTOELECTRIC CONVERSION ELEMENT, PHOTOELECTRIC CONVERSION DEVICE, AND IMAGE SENSOR - A photoelectric conversion element includes a light receiving layer that is formed of microcrystal semiconductor, a first semiconductor layer of a first conductive type that is formed on one face side of the light receiving layer, and a first intermediate layer that is interposed between the first semiconductor layer and the light receiving layer and is formed of amorphous semiconductor.04-01-2010
20100078638IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME - An image sensor and a method of fabricating an image sensor. An image sensor may include a readout circuitry arranged over a semiconductor substrate, an interlayer dielectric film provided with metal lines arranged over a semiconductor substrate, and/or a lower electrode arranged over a interlayer dielectric film such that a lower electrode may be connected to metal lines. An image sensor may include a first-type conductive layer pattern arranged over a lower electrode, an intrinsic layer arranged over a surface of a semiconductor substrate such that an intrinsic layer may substantially cover a first-type conductive layer pattern. An image sensor may include a second-type conductive layer arranged over an intrinsic layer. A method of fabricating an image sensor may include a patterned n-type amorphous silicon layer which may be treated with N04-01-2010
20090206337IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - An image sensor includes a lower metal interconnection, an interlayer dielectric, a first substrate, a photodiode, an upper electrode and an amorphous silicon layer. The lower metal interconnection and the interlayer dielectric are formed over the first substrate including a pixel region and a peripheral region. The photodiode is formed over the pixel region of the first substrate. The upper electrode layer is connected to the photodiode. The amorphous silicon layer is formed between the photodiode and the interlayer dielectric.08-20-2009
20120292619BACKSIDE TEXTURING BY CUSPS TO IMPROVE IR RESPONSE OF SILICON SOLAR CELLS AND PHOTODETECTORS - The absorption coefficient of silicon for infrared light is very low and most solar cells absorb very little of the infrared light energy in sunlight. Very thick cells of crystalline silicon can be used to increase the absorption of infrared light energy but the cost of thick crystalline cells is prohibitive. The present invention relates to the use of less expensive microcrystalline silicon solar cells and the use of backside texturing with diffusive scattering to give a very large increase in the absorption of infrared light. Backside texturing comprises a plurality of cusped features providing diffusive scattering. Constructing the solar cell with a smooth front surface results in multiple internal reflections, light trapping, and a large enhancement of the absorption of infrared solar energy.11-22-2012
20090166628IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - An image sensor includes a first substrate having a circuitry including a wire formed therein and a photodiode formed above the circuitry. An unevenness is formed at the top of the photodiode. The unevenness may, for example, be formed by selectively etching the top of the photodiode and may act to maximize light absorption by the photodiode.07-02-2009
20090166627IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - An image sensor may include a first substrate having circuitry including wires and a silicon layer formed on and/or over the first substrate to selectively contact the wires. The image sensor may include photodiodes bonded to the first substrate while contacting the silicon layer and electrically connected to the wires. Each unit pixel may be implemented having complicated circuitry without a reduction in photosensitivity. Additional on-chip circuitry may also be implanted in the design.07-02-2009
20080303022Optical sensor element, optical sensor device and image display device using optical sensor element - A highly sensitive optical sensor element, and a switch element such as a sensor driver circuit are formed on the same insulating substrate by using an LTPS planar process to provide a low cost area sensor (optical sensor device) incorporating the sensor driver circuit and the like or an image display device incorporating the optical sensor element. As an optical sensor element structure, one electrode of the sensor element is manufactured with the same film of the polycrystalline silicon film that is an active layer of the switch element constituting a circuit. A photoelectric conversion unit for performing photoelectric conversion is made of an amorphous silicon or a polycrystalline silicon film of an intrinsic layer. A structure in which the amorphous silicon of the photoelectric conversion unit and the insulating layer are sandwiched between two electrodes of the sensor element is adopted.12-11-2008
20080315198IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - An image sensor and a manufacturing method thereof are provided. The sensor includes a substrate, a bottom electrode, an intrinsic layer and a first conductive layer formed over the substrate, a diffusion barrier film formed over the first conductive layer, and an upper transparent electrode formed over the diffusion barrier film. Therefore, a vertical integration of a transistor circuitry and a photodiode can be provided. Further, the leakage current is prevented and the photosensitivity is increased by performing the plasma treatment on the first conductive layer. Due to the vertically integrated transistor circuitry and photodiode, the fill factor can approach 100%, and higher sensitivity compared with the related art having the same pixel size can be provided. The sensitivity of each unit pixel is not reduced, even though more complex circuitry is realized on the image sensor.12-25-2008
20090212285SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF - The manufacturing method of a semiconductor device according to the present invention comprises steps of forming a metal film, an insulating film, and an amorphous semiconductor film in sequence over a first substrate; crystallizing the metal film and the amorphous semiconductor film; forming a first semiconductor element by using the crystallized semiconductor film as an active region; attaching a support to the first semiconductor element by using an adhesive; causing separation between the metal film and the insulating film; attaching a second substrate to the separated insulating film; separating the support by removing the adhesive; forming an amorphous semiconductor film over the first semiconductor element; and forming a second semiconductor element using the amorphous semiconductor film as an active region.08-27-2009
20090250699ELECTROMAGNETIC WAVE DETECTING ELEMENT - The present invention provides an electromagnetic wave detecting element that can suppress occurrence of cracking at a substrate peripheral portion, and occurrence of breakage of lead-out wires. An interlayer insulating film is formed so as to cover TFT switches on a substrate. An interlayer insulating film is formed so as to cover semiconductor layer of sensor portions that generate charges due to electromagnetic waves that are an object of detection being irradiated, and cover a region on the substrate where the interlayer insulating film is formed.10-08-2009
20100163873PHOTO-VOLTAIC CELL DEVICE AND DISPLAY PANEL - A photo-voltaic cell device includes a first electrode, an N-type doped silicon-rich dielectric layer, a P-type doped silicon-rich dielectric layer, and a second electrode. The N-type doped silicon-rich dielectric layer is disposed on the first electrode, and the N-type doped silicon-rich dielectric layer is doped with an N-type dopant. The P-type doped silicon-rich dielectric layer is disposed on the N-type doped silicon-rich dielectric layer, and the P-type doped silicon-rich dielectric layer is doped with a P-type dopant. The second electrode is disposed on the P-type doped silicon-rich dielectric layer. A display panel including the photo-voltaic cell device is also provided.07-01-2010
20100187530PHOTOCONDUCTORS FOR MID-/FAR-IR DETECTION - An infrared photodiode structure is provided. The infrared photodiode structure includes a doped semiconductor layer having ions of certain conductivity. An active photodetecting region is positioned on the doped semiconductor layer for detecting an infrared light signal. The active photodetecting region includes one or more amorphous semiconductor materials so as to allow for high signal-to-noise ratio being achieved by invoking carrier hopping and band conduction, under dark and illuminated conditions.07-29-2010
20100193788AREA SENSOR AND DISPLAY APPARATUS PROVIDED WITH AN AREA SENSOR - An area sensor of the present invention has a function of displaying an image in a sensor portion by using light-emitting elements and a reading function using photoelectric conversion devices. Therefore, an image read in the sensor portion can be displayed thereon without separately providing an electronic display on the area sensor. Furthermore, a photoelectric conversion layer of a photodiode according to the present invention is made of an amorphous silicon film and an N-type semiconductor layer and a P-type semiconductor layer are made of a polycrystalline silicon film. The amorphous silicon film is formed to be thicker than the polycrystalline silicon film. As a result, the photodiode according to the present invention can receive more light.08-05-2010
20100224877Electronic Photosensitive Body and Manufacturing Method for Same, as well as Image Forming Apparatus - Disclosed is an electrophotographic photoreceptor which comprises a base material and a photoconductive layer. The photoconductive layer is formed on the base material, and comprises a non-single-crystal material mainly composed of silicon. In the photoconductive layer, with regard to a characteristic energy E (eV) which has the relationship with a light absorption coefficient α (cm09-09-2010
20120126231Electric Double Layer Capacitor, Lithium Ion Capacitor, and Charging Device - An electric double layer capacitor, a lithium ion capacitor, and a charging device including a solar cell and either of the capacitors are disclosed. The electric double layer capacitor includes a first and second light-transmitting substrates; a pair of current collectors provided perpendicular to the substrates; active material layers provided on facing planes of the current collectors; and an electrolyte in a region surrounded by the substrates and the facing active material layers. The lithium ion capacitor includes a first and second light-transmitting substrates; a positive and negative electrode active material layers provided perpendicular to the substrates; and an electrolyte in a region surrounded by the facing substrates and the positive and negative electrode active material layers.05-24-2012
20090321736IMAGE SENSOR CAPABLE OF INCREASING PHOTOSENSITIVITY AND METHOD FOR FABRICATING THE SAME - An image sensor capable of overcoming a decrease in photo sensitivity resulted from using a single crystal silicon substrate, and a method for fabricating the same are provided. An image sensor includes a single crystal silicon substrate, an amorphous silicon layer formed inside the substrate, a photodiode formed in the amorphous silicon layer, and a transfer gate formed over the substrate adjacent to the photodiode and transferring photoelectrons received from the photodiode.12-31-2009
20090114916PHOTOELECTRIC CONVERSION DEVICE AND PHOTODETECTOR APPARATUS HAVING THE SAME - A photoelectric conversion device includes an intrinsic semiconductor layer, a first conductive type semiconductor layer disposed on a first side of the intrinsic semiconductor layer, and a second conductive type semiconductor layer disposed on a second side of the intrinsic semiconductor layer opposite the first side. The intrinsic semiconductor layer includes an amorphous semiconductor layer and a crystalline semiconductor layer including a plurality of crystals. A diameter of a crystal of the plurality of crystals is equal to or less than approximately 100 angstroms.05-07-2009
20130140568IMAGE DETECTOR - An image detector comprises: an active matrix-type TFT array substrate having a pixel area, in which photoelectric conversion elements and thin film transistors are arranged in a matrix shape, a data line, and a bias line; a conversion layer, which is arranged on the TFT array substrate and converts radiation into light; and a conductive cover, which covers the conversion layer, wherein the conductive cover is adhered in an adhesion area in an upper layer than an area, in which at least one of the data line and the bias line extend from the pixel area to each of terminals, and wherein inorganic insulation films configured by at least two layers are formed between the at least one of the data line and the bias line and the adhesion area.06-06-2013
20100133537MICRO ELECTRO MECHANICAL DEVICE AND MANUFACTURING METHOD THEREOF - To manufacture a micro structure and an electric circuit included in a micro electro mechanical device over the same insulating surface in the same step. In the micro electro mechanical device, an electric circuit including a transistor and a micro structure are integrated over a substrate having an insulating surface. The micro structure includes a structural layer having the same stacked-layer structure as a layered product of a gate insulating layer of the transistor and a semiconductor layer provided over the gate insulating layer. That is, the structural layer includes a layer formed of the same insulating film as the gate insulating layer and a layer formed of the same semiconductor film as the semiconductor layer of the transistor. Further, the micro structure is manufactured by using each of conductive layers used for a gate electrode, a source electrode, and a drain electrode of the transistor as a sacrificial layer.06-03-2010
20110024749RADIATION DETECTOR - A radiation detector of this invention has an insulating, non-amine barrier layer disposed between exposed surfaces of a radiation sensitive semiconductor layer, a carrier selective high resistance film and a common electrode, and a curable synthetic resin film.02-03-2011
20110024748RADIATION IMAGE DETECTOR - An intermediate layer is located between a recording photoconductive layer and an electrode, which is either one of a bias electrode and a reference electrode, and which is located on the side at positive electric potential with respect to a charge accumulating section at the time of readout of electric charges of the charge accumulating section. The intermediate layer is an a-Se layer containing, as a specific substance, at least one kind of substance selected from the group consisting of an alkali metal fluoride, an alkaline earth metal fluoride, an alkali metal oxide, an alkaline earth metal oxide, SiO02-03-2011
20120032169Visible ray sensor and light sensor including the same - The present invention relates to a visible ray sensor and a light sensor capable of improving photosensitivity by preventing photodegradation. The visible ray sensor may include: a substrate, a light blocking member formed on the substrate, and a visible ray sensing thin film transistor formed on the light blocking member. The light blocking member may be made of a transparent electrode, a band pass filter, or an opaque metal.02-09-2012
20100244030PHOTOELECTRIC CONVERSION ELEMENT AND IMAGING DEVICE - A photoelectric conversion element includes, in the following order: a substrate; a lower electrode; a photoelectric conversion layer; and an upper electrode comprising a transparent electrode material, the photoelectric conversion element further includes a stress relieving layer provided between the upper electrode and the photoelectric conversion layer, and the stress relieving layer includes a crystal layer capable of relieving a stress of the transparent electrode material.09-30-2010
20110175085PIN STRUCTURES INCLUDING INTRINSIC GALLIUM ARSENIDE, DEVICES INCORPORATING THE SAME, AND RELATED METHODS - Provided herein are PIN structures including a layer of amorphous n-type silicon, a layer of intrinsic GaAs disposed over the layer of amorphous n-type silicon, and a layer of amorphous p-type silicon disposed over the layer of intrinsic GaAs. The layer of intrinsic GaAs may be engineered by the disclosed methods to exhibit a variety of structural properties that enhance light absorption and charge carrier mobility, including oriented polycrystalline intrinsic GaAs, embedded particles of intrinsic GaAs, and textured surfaces. Also provided are devices incorporating the PIN structures, including photovoltaic devices.07-21-2011
20110147741X-RAY DETECTOR - An X-ray detector constructed as an exemplary embodiment of the present invention includes a semiconductor layer, a data line including a source electrode covering a first portion of the semiconductor layer, a drain electrode disposed opposite to the source electrode, a first lower electrode formed on the upper portion of a second portion of the semiconductor layer and a gate insulating layer and elongated from the drain electrode, and a passivation layer formed on the upper portion of one part of the lower electrode including the drain electrode. Further, the second lower electrode is formed approaching the gate electrode. The X-ray detector constructed as the exemplary embodiment of the present invention includes a second lower electrode formed on the passivation layer and placed approaching a gate electrode. The area in which a diode is disposed may be maximized, and the amount of leakage current may be reduced.06-23-2011
20080296573Solid-state element and solid-state element device - A solid-state element has: a semiconductor layer formed on a substrate, the semiconductor layer having a first layer that corresponds to an emission area of the solid-state element to and a second layer through which current is supplied to the first layer; a light discharge surface through which light emitted from the first layer is externally discharged, the light discharge surface being located on the side of the substrate; and an electrode having a plurality of regions that are of a conductive material and are in ohmic-contact with the second layer.12-04-2008
20120199833RADIATION DETECTOR - A radiation detector of this invention has a barrier layer on the upper surface of a high resistance film along the outer edge of a common electrode, which enables prevention of a chemical reaction between an amorphous semiconductor layer and a curable synthetic resin. The barrier layer is adhesive to the curable synthetic resin film, and this can prevent strength being insufficient, such that temperature changes cause separation in interfaces between the barrier layer and curable synthetic resin film, thereby reducing the effect of inhibiting warpage and cracking. The material for the barrier layer is an insulating material not including a substance that would chemically react with the amorphous semiconductor layer. This can prevent components of the material for the barrier layer from chemically reacting with the semiconductor layer. Consequently, creeping discharge at the outer edge of the common electrode where electric fields concentrate can be prevented.08-09-2012
20120032170Electric Double-Layer Capacitor and Solar Power Generation Device - The present invention relates to a solar power generation device which includes an electric double-layer capacitor and a solar cell. The electric double-layer capacitor includes a pair of current collectors formed using a light-transmitting conductive material; active materials which are dispersed on the pair of current collectors; a light-transmitting electrolyte layer which is provided between the pair of current collectors; and a terminal portion which is electrically connected to the current collector. The solar cell includes, over a light-transmitting substrate, a first light-transmitting conductive film; a photoelectric conversion layer which is provided in contact with the first light-transmitting conductive film; and a second light-transmitting conductive film which is provided in contact with the photoelectric conversion layer. The electric double-layer capacitor and the solar cell are electrically connected to each other through the terminal portion, the first light-transmitting conductive film, and the second light-transmitting conductive film.02-09-2012
20110163314NITROGEN-OXIDE GAS SENSOR WITH LONG SIGNAL STABILITY - The present invention provides a nitrogen-oxide gas sensor that is able to measure nitric oxide and nitrogen dioxide at the same time and ensure measurement accuracy and long stability. For these purposes, the nitrogen-oxide gas sensor includes: an oxide ion conductive solid electrolyte; a primary film that contacts the solid electrolyte and is made of a p-type semi-conductor metal oxide; a secondary film that contacts the solid electrolyte and is made of a p-type semiconductor metal oxide; an n-type semiconductor metal oxide that is included in at least one of the primary and secondary films; a power source that applies electric power to the primary and secondary films by electrically connecting a primary node to the primary film and a secondary node to the secondary film; and a measurement unit that measures the electric potential difference between the primary and secondary nodes.07-07-2011
20110260163PERMEABLE DIAPHRAGM PIEZORESISTIVE BASED SENSORS - An improved piezoresistive-based sensor (10-27-2011
20120146028PHOTOSENSOR, SEMICONDUCTOR DEVICE, AND LIQUID CRYSTAL PANEL - The light use efficiency of a thin film diode is improved even when the semiconductor layer of the diode has a small thickness, thereby improving the light detection sensitivity of the diode. Further, a short circuit between the electrodes of the thin film diode via the light-blocking layer is prevented. A thin film diode (06-14-2012
20120146027PHOTODETECTOR CIRCUIT, INPUT DEVICE, AND INPUT/OUTPUT DEVICE - An adverse effect of parasitic capacitance on optical data output from a photodetector circuit is suppressed. A photodetector circuit includes a photoelectric conversion element; a first field-effect transistor; a second field-effect transistor; a first conductive layer functioning as a gate of the first field-effect transistor; an insulating layer provided over the first conductive layer; a semiconductor layer overlapping with the first conductive layer with the insulating layer interposed therebetween; a second conductive layer electrically connected to the semiconductor layer; and a third conductive layer electrically connected to the semiconductor layer, whose pair of side surfaces facing each other overlaps with at least one conductive layer including the first conductive layer with the insulating layer interposed therebetween, and which functions as the other of the source and the drain of the first field-effect transistor.06-14-2012
20120146026PHOTOELECTRIC CONVERSION ELEMENT, PHOTOELECTRIC CONVERSION CIRCUIT, AND DISPLAY DEVICE - A photoelectric conversion, element including a first gate electrode, a first gate insulating layer, a crystalline semiconductor layer an amorphous semiconductor layer, an impurity semiconductor layer, a source electrode and a drain electrode in contact with the impurity semiconductor layer, a second gate insulating layer covering; a region between the source electrode and the drain electrode, and a second gate electrode over the second gate insulating layer. In the photoelectric conversion element, a Sight-receiving portion is provided in the region between the source electrode and the drain electrode, the first gate electrode includes a light-shielding material and overlaps with the entire surface of the crystalline semiconductor layer and the amorphous semiconductor layer, the second gate electrode includes a light-transmitting material and overlaps with, the light-receiving portion, and the first gate electrode is electrically connected to the source electrode or the drain electrode is provided.06-14-2012
20110260164MULTIPLE-JUNCTION PHOTOELECTRIC DEVICE AND ITS PRODUCTION PROCESS - A multiple-junction photoelectric device includes a substrate with a first conducting layer thereon, at least two elementary photoelectric devices of p-i-n or p-n configuration, with a second conducting layer thereon, and at least one intermediate layer between two adjacent elementary photoelectric devices. The intermediate layer has, on the incoming light side, opposite top and bottom faces, the top and bottom faces having respectively a surface morphology including inclined elementary surfaces so α10-27-2011
20120146025Light-Emitting Device, Electronic Device, and Lighting Device - A light energy reuse type light-emitting device with low power consumption is provided by converting light from a light-emitting device into electric power efficiently for reuse. Also, a light energy reuse type light-emitting device with high yield is provided. A light-blocking film of the light-emitting device is replaced to a photoelectric conversion element, so that light is converted into electric power. That is, conventionally, light is not emitted in a portion of a light-blocking film. In the disclosed invention, light which is not emitted can be converted into electric power by a photoelectric conversion element, and can be reused. Therefore, a light-emitting device with low power consumption is realized.06-14-2012
20090173940Image Sensor and Method for Manufacturing the Same - An image sensor can include a first substrate, an amorphous layer, and a photodiode. A circuitry including a metal interconnection can be formed on the first substrate. The amorphous layer is disposed over the first substrate, and contacts the metal interconnection. The photodiode can be formed in a crystalline semiconductor layer and is bonded to the first substrate such that the photodiode contacts the amorphous layer and is electrically connected to the metal interconnection.07-09-2009
20110073859Reduced Stiction MEMS Device with Exposed Silicon Carbide - A MEMS device has a first member that is movable relative to a second member. At least one of the first member and the second member has exposed silicon carbide with a water contact angle of greater than about 70 degrees.03-31-2011
20120037905DISPLAY DEVICE AND ELECTRONIC EQUIPMENT - A display device of the present invention includes a display panel (02-16-2012
20120037904AMORPHOUS BORON CARBIDE FILMS FOR P-N JUNCTIONS AND METHOD FOR FABRICATING SAME - Amorphous semiconductor films with enhanced charged carrier transport are disclosed. Also disclosed is a method for fabricating and treating the film to produce the enhanced transport. Also disclosed are semiconductor p-n junctions fabricated with the films which demonstrate the enhanced transport. The films are amorphous and include boron, carbon, and hydrogen.02-16-2012
20120097946PHOTO-DETECTING DEVICE AND METHOD OF MAKING A PHOTO-DETECTING DEVICE - A photo-detecting device including a plurality of pixels, each including at least one alternate stack of photodiodes and electrically conducting electrodes. Each photodiode includes one intrinsic amorphous semiconductor layer in contact with one doped amorphous semiconductor layer distinct from the amorphous semiconductor layers in other photodiodes, and is arranged between two electrodes. Each pair of photodiodes includes one of the electrodes arranged between photodiodes. In each pixel: each electrode includes an electrically conducting portion not superposed on other electrodes of the pixel and electrically connected to one interconnection hole filled with an electrically conducting material; and portions of an electrically conducting material are superposed approximately on each of non-superposed portions of electrodes.04-26-2012
20120001178THIN FILM TRANSISTOR - A thin film transistor with favorable electric characteristics is provided. The thin film transistor includes a gate electrode, a gate insulating layer, a semiconductor layer which includes a microcrystalline semiconductor region and an amorphous semiconductor region, an impurity semiconductor layer, a wiring, a first oxide region provided between the microcrystalline semiconductor region and the wiring, and a second oxide region provided between the amorphous semiconductor region and the wiring. wherein a line tangent to the highest inclination of an oxygen profile in the first oxide region (m1) and a line tangent to the highest inclination of an oxygen profile in the second oxide region (m2) satisfy a relation of 101-05-2012
20120056179Photo sensor, method of manufacturing photo sensor, and display apparatus - A photo sensor, a method of manufacturing the photo sensor, and a display apparatus, the photo sensor including a substrate; a light receiving unit on the substrate, the light receiving unit including an amorphous semiconductor material; a first adjacent unit and a second adjacent unit formed as one body with the light receiving unit, the first adjacent unit and the second adjacent unit being separated from each other by the light receiving unit; a first photo sensor electrode electrically connected to the first adjacent unit; and a second photo sensor electrode electrically connected to the second adjacent unit, wherein at least one of the first adjacent unit and the second adjacent unit includes a crystalline semiconductor material.03-08-2012
20120205655METHOD TO TEXTURE A LAMINA SURFACE WITHIN A PHOTOVOLTAIC CELL - It is advantageous to create texture at the surface of a photovoltaic cell to reduce reflection and increase travel length of light within the cell. A method is disclosed to create texture at the surface of a silicon body by reacting a silicide-forming metal at the surface, where the silicide-silicon interface is non-planar, then stripping the silicide, leaving behind a textured surface. Depending on the metal and the conditions of silicide formation, the resulting surface may be faceted. The peak-to-valley height of this texturing will generally be between about 300 and about 5000 angstroms, which is well-suited for use in photovoltaic cells comprising a thin silicon lamina.08-16-2012
20110042673SENSOR AND METHOD FOR MANUFACTURING THE SAME - Provided is a sensor having a high sensitivity and a high degree of freedom of layout by reducing constrictions of the channel shape, the reaction field area, and the position. Provided is also a method for manufacturing the sensor. The sensor (02-24-2011
20110089420BACKSIDE ONLY CONTACT THIN-FILM SOLAR CELLS AND DEVICES, SYSTEMS AND METHODS OF FABRICATING SAME, AND PRODUCTS PRODUCED BY PROCESSES THEREOF - Systems, methods, devices, and products of processes consistent with the innovations herein relate to thin-film solar cells having contacts on the backside, only. In one exemplary implementation, there is provided a thin film device. Moreover, such device may comprise a substrate, and a layer of silicon or silicon-containing material positioned on a first side of the substrate, wherein the layer comprises a n-doped region and a p-doped region. In some exemplary implementations, the device may be fabricated such that the n-doped region and the p-doped region are formed on the backside surface of the layer to create an electrical structure characterized by a P-type anode and an N-type cathode forming a junction positioned along the backside surface of the layer.04-21-2011
20120161130ELECTRODE, PHOTOELECTRIC CONVERSION DEVICE USING THE ELECTRODE, AND MANUFACTURING METHOD THEREOF - A minute electrode, a photoelectric conversion device including the minute electrode, and manufacturing methods thereof are provided. A plurality of parallel groove portions and a region sandwiched between the groove portions are formed in a substrate, and a conductive resin is supplied to the groove portions and the region and is fixed, whereby the groove portions are filled with the conductive resin and the region is covered with the conductive resin. The supplied conductive resin is not expanded outward, and the electrode with a designed width can be formed. Part of the electrode is formed over the region sandwiched between the groove portions, thus, the area of a cross section in the short axis direction can be large, and a low resistance in the long axis direction can be obtained.06-28-2012
20120211749SEMICONDUCTOR DEVICE - To improve the performance of a protection circuit including a diode formed using a semiconductor film. A protection circuit is inserted between two input/output terminals. The protection circuit includes a diode which is formed over an insulating surface and is formed using a semiconductor film. Contact holes for connecting an n-type impurity region and a p-type impurity region of the diode to a first conductive film in the protection circuit are distributed over the entire impurity regions. Further, contact holes for connecting the first conductive film and a second conductive film in the protection circuit are dispersively formed over the semiconductor film. By forming the contact holes in this manner, wiring resistance between the diode and a terminal can be reduced and the entire semiconductor film of the diode can be effectively serve as a rectifier element.08-23-2012
20120074406PHOTOSENSOR - A photosensor includes a photosensor array in which plural photosensor pixels are arranged in a matrix form and a backlight arranged below the photosensor array. The photosensor array includes a surface light-shielding film (for example, Al film), and the surface light-shielding film includes an incident hole through which light from an opposite side to the backlight is incident on the respective photosensor pixels, and a passage hole which is provided around the incident hole and irradiates the opposite side with irradiation light from the backlight.03-29-2012
20090315030METHODS FOR FORMING AN AMORPHOUS SILICON FILM IN DISPLAY DEVICES - Embodiments of the present invention relate to methods for depositing an amorphous film that may be suitable for using in a NIP photodiode in display applications. In one embodiment, the method includes providing a substrate into a deposition chamber, supplying a gas mixture having a hydrogen gas to silane gas ratio by volume greater than 4 into the deposition chamber, maintaining a pressure of the gas mixture at greater than about 1 Torr in the deposition chamber, and forming an amorphous silicon film on the substrate in the presence of the gas mixture, wherein the amorphous silicon film is configured to be an intrinsic-type layer in a photodiode sensor.12-24-2009
20080296572OPTICAL SEMICONDUCTOR DEVICE WITH SEALING SPACER - An optical semiconductor device may include a semiconductor component having an optical sensor on a front face thereof, and a transparent plate having electrical connection lines on a rear face thereof and lying outside a free region of the rear face. The front face of the semiconductor component may be attached to the rear face of the transparent plate so that the optical sensor is adjacent the free region. The optical semiconductor device may also include electrical connectors electrically connecting the semiconductor component to the electrical connection lines, a sealing spacer extending only partway between the front face of the semiconductor component and the rear face of the transparent plate at the periphery of the optical sensor, and an encapsulating material for encapsulating the electrical connectors and a periphery of the semiconductor component on the rear face of the transparent plate. The sealing spacer may be structurally distinct from, abutting, and retaining the encapsulating material.12-04-2008
20120319111THIN-FILM PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR PRODUCTION THEREOF - A thin-film photoelectric conversion device includes a crystalline germanium photoelectric conversion layer having improved open circuit voltage, fill factor, and photoelectric conversion efficiency for light having a longer wavelength. The photoelectric conversion device comprises a first electrode layer, one or more photoelectric conversion units, and a second electrode layer sequentially stacked on a substrate, wherein each of the photoelectric conversion units comprises a photoelectric conversion layer arranged between a p-type semiconductor layer and an n-type semiconductor layer. At least one of the photoelectric conversion units includes a crystalline germanium photoelectric conversion layer comprising a crystalline germanium semiconductor that is substantially intrinsic or weak n-type and is essentially free of silicon. A first interface layer which is a substantially intrinsic amorphous silicon semiconductor layer is arranged between the p-type semiconductor layer and the crystalline germanium photoelectric conversion layer.12-20-2012
20110215323SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion.09-08-2011
20120080676Backside nanoscale texturing to improve IR response of silicon solar cells and photodetectors - The absorption coefficient of silicon for infrared light is very low and most solar cells absorb very little of the infrared light energy in sunlight. Very thick cells of crystalline silicon can be used to increase the absorption of infrared light energy but the cost of thick crystalline cells is prohibitive. The present invention relates to the use of less expensive microcrystalline silicon solar cells and the use of backside texturing with diffusive scattering to give a very large increase in the absorption of infrared light. Backside texturing with diffusive scattering and with a smooth front surface of the solar cell results in multiple internal reflections, light trapping, and a large enhancement of the absorption of infrared solar energy.04-05-2012
20120080675PHOTOELECTRIC CONVERTER, METHOD OF MANUFACTURING PHOTOELECTRIC CONVERTER AND IMAGING DEVICE - A photoelectric converter includes a pair of electrodes and a plurality of organic layers. The pair of electrodes is provided above a substrate. The plurality of organic layers is interposed between the pair of electrodes and includes a photoelectric conversion layer and a given organic layer being formed on one electrode of the pair of electrodes. The one electrode is one of pixel electrodes arranged two-dimensionally. The given organic layer has a concave portion that is formed in a corresponding position located above a step portion among the arranged pixel electrodes. An angle θ of the concave portion is less than 50°, where an inclination angle of a tangent plane at a given point on the concave portion to a surface plane of the substrate is defined as θ.04-05-2012
20120280232PHOTOELECTRIC CONVERSION DEVICE - A photoelectric conversion device includes a first photoelectric conversion unit on a substrate and having a first energy bandgap, a second photoelectric conversion unit having a second energy bandgap that is different from the first energy bandgap, the second photoelectric conversion unit being on the first photoelectric conversion unit, and an intermediate unit between the first and second photoelectric conversion units, the intermediate unit including a stack of a first intermediate layer and a second intermediate layer, each of the first intermediate layer and the second intermediate layer having a refractive index that is smaller than that of the first photoelectric conversion unit, the first intermediate layer having a first refractive index, and the second intermediate layer having a second refractive index that is smaller than the first refractive index.11-08-2012
20110140106Backside naoscale texturing to improve IR response of silicon solar cells and photodetectors - The absorption coefficient of silicon for infrared light is very low and most solar cells absorb very little of the infrared light energy in sunlight. Very thick cells of crystalline silicon can be used to increase the absorption of infrared light energy but the cost of thick crystalline cells is prohibitive. The present invention relates to the use of less expensive microcrystalline silicon solar cells and the use of backside texturing with diffusive scattering to give a very large increase in the absorption of infrared light. Backside texturing with diffusive scattering and with a smooth front surface of the solar cell results in multiple internal reflections, light trapping, and a large enhancement of the absorption of infrared solar energy.06-16-2011
20130020573PRESSURE DETECTING DEVICE AND METHOD FOR MANUFACTURING THE SAME, DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME, AND TFT SUBSTRATE WITH PRESSURE DETECTING DEVICE - A pressure detecting device includes a glass substrate as a substrate, a lower electrode arranged on the glass substrate, an upper electrode spaced apart from the lower electrode and facing the lower electrode, the upper electrode having holes as one or more through-openings, and a source line as a change extracting wiring for detecting a change in electrical state caused by the upper electrode receiving pressure to deflect toward the lower electrode.01-24-2013
20080230782PHOTOCONDUCTIVE DEVICES WITH ENHANCED EFFICIENCY FROM GROUP IV NANOPARTICLE MATERIALS AND METHODS THEREOF - A device for generating a plurality of electron-hole pairs from a photon is disclosed. The device includes a substrate, a first electrode formed above the substrate, and a first doped Group IV nanoparticle thin film deposited on the first electrode. The device further includes an intrinsic layer deposited on the first doped Group IV nanoparticle thin film, wherein the intrinsic layer includes a matrix material with a melting temperature T09-25-2008
20080224138Image Sensor and Method of Manufacturing the Same - Disclosed is an image sensor, which includes a substrate having a transistor circuit and lower interconnections. First interconnections are formed separated from each other on the substrate and electrically connected to the CMOS circuitry through the lower interconnections. Planarized insulating layers are formed between the first interconnections to isolate unit pixels. An intrinsic layer is formed on the substrate including the insulating layers, and a second conductive layer is formed on the intrinsic layer. The first interconnections, the intrinsic layer and the second conductive layer provide a photodiode structure for the image sensor.09-18-2008
20080224137Image Sensor and Method for Manufacturing the Same - An image sensor and a method of manufacturing the same are provided. A metal wiring layer is formed on a semiconductor substrate including a circuit region, and first conductive layers are formed on the metal layer separated by a pixel isolation layer. An intrinsic layer is formed on the first conductive layers, and a second conductive layer is formed on the intrinsic layer.09-18-2008
20080224136IMAGE SENSOR AND FABRICATION METHOD THEREOF - An image sensor contains a semiconductor substrate, a plurality of pixels defined on the semiconductor substrate, a photo conductive layer and a transparent conductive layer formed on the pixel electrodes of the pixels in order, and a shield device positioned between any two adjacent pixel electrodes. The shield device has a shield electrode and an isolation structure surrounding the shield electrode so that the shield electrode is isolated from the pixel electrodes and the photo conductive layer by the isolation structure.09-18-2008
20100230675DISPLAY DEVICE - A display device having a photosensor which exhibits excellent photoelectric conversion efficiency is provided. In a display device which forms photosensors on a substrate thereof, the photosensor is formed by sequentially stacking a gate electrode, a gate insulation film and a semiconductor layer in such an order or in an opposite order from a substrate side, and electrodes are connected to both sides of the semiconductor layer respectively, the semiconductor layer is formed of a stacked body consisting of a crystalline semiconductor layer and an amorphous semiconductor layer, and the crystalline semiconductor layer is arranged on the gate insulation film side.09-16-2010
20130092941IMAGE SENSOR WITH PHOTOSENSITIVE THIN FILM TRANSISTORS - An image sensor array includes image sensors having photo TFTs to generate photocurrent in response to received images. The photo TFTs each have their respective gate electrodes and source electrodes independently biased to reduce the effects of dark current. Storage capacitors are coupled to each photo TFT and discharged upon generation of a photocurrent. Each storage capacitor is coupled to a readout TFT that passes a current from the storage capacitor to a data line. The photo TFT may be disposed above the storage capacitor to increase the exposed surface area of the photo TFT.04-18-2013
20130099236MODIFICATION OF SILICON LAYERS FORMED FROM SILANE-CONTAINING FORMULATIONS - The invention relates to a process for producing an oxygen-containing surface or interface of a silicon layer, which is arranged on a substrate, especially in the production of photovoltaic units.04-25-2013
20120273785PHOTOSENSOR ELEMENT, PHOTOSENSOR CIRCUIT, THIN FILM TRANSISTOR SUBSTRATE, DISPLAY PANEL, AND METHOD FOR MANUFACTURING PHOTOSENSOR ELEMENT - A photosensor element (11-01-2012
20110233549DISPLAY APPARATUS INCLUDING GYRO SENSORS, AND METHOD OF MANUFACTURING THE SAME - A display apparatus including gyro sensors with a simple structure, and a method of manufacturing the same are disclosed. The display apparatus includes a first substrate and a second substrate, a space between the first substrate and second substrate, including a display area and a non-display area, and a first gyro sensor formed in a sensor area disposed within the non-display area, where the first gyro sensor includes: a first lower base electrode placed at a central portion of the first gyro sensor on the first substrate, a pair of first lower direction electrodes formed to be symmetrical to each other around the first lower base electrode in a first direction on the first substrate, and a first conductor configured to contact with the first lower base electrode within the first gyro sensor.09-29-2011
20110309361Photoelectric Conversion Element, Display Device, Electronic Device, and Method for Manufacturing Photoelectric Conversion Element - A photoelectric conversion element includes a first conductive layer over a substrate; a first insulating layer covering the first conductive layer; a first semiconductor layer over the first insulating layer; a second conductive layer formed over the first semiconductor layer; an impurity semiconductor layer over the second semiconductor layer; a second conductive layer over the impurity semiconductor layer; a second insulating layer covering the first semiconductor layer and the second conductive layer; and a light-transmitting third conductive layer over the second insulating layer. A first opening and a second opening are formed in the second insulating layer. In the first opening, the first semiconductor layer is connected to the third conductive layer. In the second opening, the first conductive layer is connected to the third conductive layer. In the first opening, a light-receiving portion surrounded by an electrode formed of the second conductive layer is provided.12-22-2011
20130200373DISPLAY DEVICE - The present invention provides an inexpensive display device that includes an ion sensor portion and a display and that can be miniaturized. The present invention is a display device that includes an ion sensor portion including an ion sensor circuit and a display including a display-driving circuit. The display device has a substrate, and at least one portion of the ion sensor circuit and at least one portion of the display-driving circuit are formed on the same main surface of the substrate.08-08-2013
20120086007PIN STRUCTURES INCLUDING INTRINSIC GALLIUM ARSENIDE, DEVICES INCORPORATING THE SAME, AND RELATED METHODS - Provided herein are PIN structures including a layer of amorphous n-type silicon, a layer of intrinsic GaAs disposed over the layer of amorphous n-type silicon, and a layer of amorphous p-type silicon disposed over the layer of intrinsic GaAs. The layer of intrinsic GaAs may be engineered by the disclosed methods to exhibit a variety of structural properties that enhance light absorption and charge carrier mobility, including oriented polycrystalline intrinsic GaAs, embedded particles of intrinsic GaAs, and textured surfaces. Also provided are devices incorporating the PIN structures, including photovoltaic devices.04-12-2012
20120086006SEMICONDUCTOR DEVICE - Techniques are provided for obtaining a photoelectric conversion device having a favorable spectral sensitivity characteristic and reduced variation in output current without a contamination substance mixed into a photoelectric conversion layer or a transistor, and for obtaining a highly reliable semiconductor device including a photoelectric conversion device. A semiconductor device may include, over an insulating surface, a first electrode; a second electrode; a color filter between the first electrode and the second electrode; an overcoat layer covering the color filter; and a photoelectric conversion layer over the overcoat layer, where one end portion of the photoelectric conversion layer is in contact with the first electrode, and where an end portion of the color filter lies inside the other end portion of the photoelectric conversion layer.04-12-2012
20120086005PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF - A photoelectric conversion device including a single crystal silicon substrate; a first amorphous silicon layer in contact with a surface (a light-receiving surface) of the single crystal silicon substrate; a first polarity (p-type) impurity diffusion layer in contact with the first amorphous silicon layer; a second amorphous silicon layer in contact with a back surface of the single crystal silicon substrate; and a second polarity (n-type) impurity diffusion layer in contact with the second amorphous silicon layer, in which the first and second polarity impurity diffusion layers are microcrystalline silicon layers formed under a deposition condition where a pressure in a reaction chamber is adjusted to be greater than or equal to 450 Pa and less than or equal to 10000 Pa is provided.04-12-2012
257054000 With Schottky barrier to amorphous material 1
20080210939Method for Fabricating an Image Sensor Device with Reduced Pixel Cross-Talk - A method of fabricating an image sensor device (09-04-2008
257055000 Amorphous semiconductor is alloy or contains material to change band gap (e.g., Si x Ge 1-x , SiN y ) 2
20120138929IR SENSING TRANSISTOR AND MANUFACTURING METHOD OF DISPLAY DEVICE INCLUDING THE SAME - An IR sensing transistor according to an exemplary embodiment of the present invention includes: a light blocking layer formed on a substrate; a gate insulating layer formed on the light blocking layer; a semiconductor formed on the gate insulating layer; a pair of ohmic contact members formed on the semiconductor; a source electrode and a drain electrode formed on respective ones of the ohmic contact members; a passivation layer formed on the source electrode and the drain electrode; and a gate electrode formed on the passivation layer, wherein substantially all of the gate insulating layer lies on the light blocking layer.06-07-2012
20130234142VISIBLE SENSING TRANSISTOR, DISPLAY PANEL AND MANUFACTURING METHOD THEREOF - A display device includes an infrared sensing transistor and a visible sensing transistor. The visible sensing transistor includes a semiconductor on a substrate; an ohmic contact on the semiconductor; an etch stopping layer on the ohmic contact; a source electrode and a drain electrode on the etch stopping layer; a passivation layer on the source electrode and the drain electrode; and a gate electrode on the passivation layer. The etch stopping layer may be composed of the same material as the source electrode and the drain electrode. The infrared sensing transistor is similar to the visible sensing transistor except the etch stopping layer is absent.09-12-2013

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