Class / Patent application number | Description | Number of patent applications / Date published |
252519400 | Sulfur, selenium, or tellurium containing | 62 |
20080237549 | PHOSPHOR MATERIAL AND MANUFACTURING METHOD THEREOF - A novel phosphor material which can be manufactured without utilizing a fault formation process which is difficult to be controlled. The phosphor material has a eutectic structure formed of a base material that is a semiconductor formed of a Group 2 element and a Group 6 element, a semiconductor formed of a Group 3 element and a Group 5 element, or a ternary phosphor formed of an alkaline earth metal, a Group 3 element, and a Group 6 element, and a solid solution material including a transition metal. The phosphor material is suited for an EL element because of less variation of characteristic since defect formation process in which stress is applied externally to form a defect inside of a phosphor material is not needed. | 10-02-2008 |
20080265221 | TEMPLATED SEMICONDUCTOR PARTICLES AND METHODS OF MAKING - Composite particles of a semiconductor particle such as a metal chalcogenide within a crosslinked, cored dendrimer are described. Additionally, methods of making the composite particles and compositions that contain the composite particles are described. | 10-30-2008 |
20090218552 | Method of Producing Portland Cement Having Electrical Conduction and Optical Properties - A method of producing conductive and/or translucent Portland cement which has high sulphate resistance and a service life of up to 70 years under normal service conditions. Once cement has set, light can pass therethrough. Up to 70% of the final resistance of the cement is reached within 48 hours of setting. The inventive production method is characterised in that it produces a fineness of more than 3450 cm2/g and in that, upon setting, the concrete has a mechanical strength of between 26 MPa and 250 MPa, without the addition of additives, thereby enabling a reduction in the water required to obtain a determined slump. | 09-03-2009 |
20090289233 | METHOD FOR PREPARING NANOPARTICLES USING CARBENE DERIVATIVES - Disclosed herein is a method for synthesizing a nanoparticle using a carbene derivative. More specifically, provided is a method for synthesizing a nanoparticle by adding one or more precursors to an organic solvent to grow a crystal, wherein a specific carbene derivative is used as the precursor. | 11-26-2009 |
20100019211 | NANOCOMPOSITE MATERIAL AND METHOD OF MANUFACTURING THE SAME - A nanocomposite material and a method of manufacturing the same are disclosed. The nanocomposite material includes a plurality of nanoparticles coated with a metal oxide, and a matrix of the metal oxide immobilizing the nanoparticles that are dispersed therein. The nanocomposite material is manufactured such that macro- or micro-scale cracks are prevented or effectively prevented, light stability is enhanced over a light-emitting period, and light brightness is improved. | 01-28-2010 |
20100025640 | Loading quantum dots into thermo-responsive microgels by reversible transfer from organic solvents to water - Method for the preparation of inorganic-NP-composite microgels is based on the reversible transfer of microgels between water and an organic solvent such as tetrahydrofuran (THF). The method is used to produce semiconductor nanocrystals, often referred to as quantum dots (QDs) which are well known for their unique optical, electrical, magnetic and catalytic properties, as the inorganic NPs, recognizing that the best quality QDs are synthesized by a high temperature process in organic media, and have their surface covered with hydrophobic ligands (such as trioctylphosphine oxide, TOPO) that render the NPs insoluble in an aqueous solution. | 02-04-2010 |
20100096599 | CORE/SHELL TYPE SEMICONDUCTOR NANOPARTICLE AND METHOD FOR PRODUCTION THEREOF - Disclosed are core/shell type semiconductor nanoparticles exhibiting a sufficient emission intensity without causing a blink phenomenon (blinking). The core/shell-type semiconductor nanoparticles have an average particle size of from 2 to 50 nm and comprise an intermediate layer between a core portion and a shell portion, wherein band gap widths of bulk crystals which have the same compositions as those of the core portion, the intermediate portion and the shell portion, respectively, are in the order of:
| 04-22-2010 |
20100193752 | MICROBIALLY-MEDIATED METHOD FOR SYNTHESIS OF NON-OXIDE SEMICONDUCTOR NANOPARTICLES - The invention is directed to a method for producing non-oxide semiconductor nanoparticles, the method comprising: (a) subjecting a combination of reaction components to conditions conducive to microbially-mediated formation of non-oxide semiconductor nanoparticles, wherein said combination of reaction components comprises i) anaerobic microbes, ii) a culture medium suitable for sustaining said anaerobic microbes, iii) a metal component comprising at least one type of metal ion, iv) a non-metal component containing at least one non-metal selected from the group consisting of S, Se, Te, and As, and v) one or more electron donors that provide donatable electrons to said anaerobic microbes during consumption of the electron donor by said anaerobic microbes; and (b) isolating said non-oxide semiconductor nanoparticles, which contain at least one of said metal ions and at least one of said non-metals. The invention is also directed to non-oxide semiconductor nanoparticle compositions produced as above and having distinctive properties. | 08-05-2010 |
20100258769 | OPTICALLY VARIABLE PIGMENTS OF HIGH ELECTRICAL CONDUCTIVITY - The present invention relates to optically variable pigments of high electrical conductivity which comprise a flake-form substrate, which essentially consists of silicon dioxide and/or silicon oxide hydrate, and an electrically conductive layer surrounding the substrate, to a process for the preparation thereof, and to the use of pigments of this type. | 10-14-2010 |
20100320426 | METHOD OF PRODUCING GROUP II-VI COMPOUND SEMICONDUCTOR, METHOD OF PRODUCING GROUP II-VI COMPOUND SEMICONDUCTOR PHOSPHOR, AND HEXAGONAL GROUP II-VI COMPOUND SEMICONDUCTOR - An object of the invention is to provide a method for the stable production of a high-purity Group II-VI compound semiconductor on an industrial scale, and also a hexagonal crystal of Group II-VI compound semiconductor in which a metal can be doped easily. Another object of the invention is to provide a method of producing a Group II-VI compound semiconductor phosphor. | 12-23-2010 |
20110031452 | Nanoparticles Having Continuous Photoluminescence - A nanoparticle comprising a ternary core comprising Cd, Zn and Se; and a shell comprising Zn and Y, wherein Y is Se or S or a combination thereof. The Cd and Zn are non-homogenously distributed in the ternary core such that the nanoparticle exhibits continuous photoluminescence for extended periods of time. Also provided are methods for preparing and methods of using the nanoparticles which exhibit continuous photoluminescence. | 02-10-2011 |
20110037037 | COMPOSITE OF METAL SULFIDE AND METAL OXIDE AND PROCESS FOR PRODUCING THE COMPOSITE - The present invention provides a process for producing a composite of metal sulfide and metal oxide obtained by dispersing a metal sulfide, which is nickel sulfide, copper sulfide, iron sulfide or a mixture thereof, in a metal salt-containing aqueous solution, and depositing metal salt on the metal sulfide by drying the aqueous solution; and heat-treating the metal sulfide comprising a metal salt deposited thereon at 400 to 900° C. in a sulfur-containing atmosphere. Also disclosed is a composite obtained by the aforementioned process, comprising a metal sulfide having a surface partially covered with a metal oxide. The composite of the present invention has improved cycle characteristics while maintaining a high charge/discharge capacity and excellent electrical conductivity inherently possessed by metal sulfide, which is usable as a material having a high theoretical capacity and excellent electrical conductivity when used as a positive-electrode material for a lithium secondary battery. | 02-17-2011 |
20110049443 | PROCESS FOR THE PREPARATION OF CRYSTALLINE LITHIUM-, IRON- AND PHOSPHATE-COMPRISING MATERIALS - The present application relates to a process for the preparation of compounds of general formula (I) Lia-bM | 03-03-2011 |
20110155969 | METHODS FOR ISOLATING AND PURIFYING NANOPARTICLES FROM A COMPLEX MEDIUM - A method for isolating a nanoparticle is disclosed. A medium containing a nanoparticle is provided. The medium is acidified with a weak acid. An alcoholic solvent is added to induce the nanoparticle to precipitate from the medium. The precipitated nanoparticles are separated from the medium. | 06-30-2011 |
20110215281 | METHOD FOR PREPARING CIGS INKS WITHOUT SURFACTANT - A method for preparing a CIGS ink without a surfactant or a binder is provided. In accordance with the method of the present invention, an initial CIGS mixture powder is obtained by mixing two component powder, three component powder or four component powder of copper, indium, gallium, and selenium in predetermined proportions. Then additional selenide powder is added and mixed into the initial CIGS mixture powder to form a final CIGS mixture powder. Then, a certain proportion of solvent is added into the final CIGS mixture powder, and the mixture powder is then stirred to obtain a CIGS ink in a predetermined copper/indium/gallium/selenium ratio as desired. | 09-08-2011 |
20110233487 | Synthesis of Chalcogenide Ternary and Quaternary Nanotubes Through Directed Compositional Alterations of Bacterial As-S Nanotubes - Provided is a method for preparing a chalcogenic hybrid nanostructure including: (a) adding a chalcogenic nanostructure, an electron donor and an electron acceptor to a medium containing metal-reducing bacteria to prepare a reaction mixture, the electron acceptor including a chalcogen element; and (b) performing a metal reduction reaction using the prepared reaction mixture to prepare a chalcogenic hybrid nanostructure with the chalcogen element of the electron acceptor incorporated. The present disclosure provides a new method allowing preparation of a chalcogenic hybrid nanostructure comprising three or more components using metal-reducing bacteria. The disclosure allows preparation of a nanostructure in a more economical and eco-friendly manner. The disclosure also allows control of morphological, physical/chemical and electrical properties of the prepared nanostructure. In addition, the present disclosure provides a nanomaterial that can be useful in nanoelectronic and optoelectronic devices. | 09-29-2011 |
20110240932 | HYDRAZINE-FREE SOLUTION DEPOSITION OF CHALCOGENIDE FILMS - A method of depositing a film of a metal chalcogenide including the steps of: contacting an isolated hydrazinium-based precursor of a metal chalcogenide and a solvent having therein a solubilizing additive to form a solution of a complex thereof; applying the solution of the complex onto a substrate to produce a coating of the solution on the substrate; removing the solvent from the coating to produce a film of the complex on the substrate; and thereafter annealing the film of the complex to produce a metal chalcogenide film on the substrate. Also provided is a process for preparing an isolated hydrazinium-based precursor of a metal chalcogenide as well as a thin-film field-effect transistor device using the metal chalcogenides as the channel layer. | 10-06-2011 |
20110248222 | PROCESS FOR MANUFACTURING COLLOIDAL MATERIALS, COLLOIDAL MATERIALS AND THEIR USES - The present invention relates to a process for manufacturing a colloidal material, to colloidal materials obtainable by this process and to uses of said colloidal material for the manufacture of optic devices. The colloidal material obtainable by the process of the present invention is of formula A | 10-13-2011 |
20120018684 | POWDER BLEND - A method for producing uniform powder blends may include a multi-pass riffling process. | 01-26-2012 |
20120025154 | SYNTHESIS OF NANOCOMPOSITE THERMOELECTRIC MATERIAL - A process for forming thermoelectric nanoparticles includes the steps of forming a core material reverse micelle or micelle, adding a bismuth containing compound to the core material reverse micelle or micelle forming a reverse micelle or micelle having the bismuth containing compound dispersed therein, adding a tellurium containing compound with the formed micelle or reverse micelle in the presence of a reducing agent that alloys with the bismuth containing compound forming composite thermoelectric nanoparticles having a core and shell structure, and washing the core and shell nanoparticles in a solvent mixture including ammonium hydroxide, water and methanol wherein the core and shell nanoparticles remain un-agglomerated and have a particle size of from 1-25 nanometers. | 02-02-2012 |
20120025155 | Preparation of Nanoparticle Materials - A method of producing nanoparticles comprises effecting conversion of a nanoparticle precursor composition to the material of the nanoparticles. The precursor composition comprises a first precursor species containing a first ion to be incorporated into the growing nanoparticles and a separate second precursor species containing a second ion to be incorporated into the growing nanoparticles. The conversion is effected in the presence of a molecular cluster compound under conditions permitting seeding and growth of the nanoparticles. | 02-02-2012 |
20120032122 | METHOD FOR FORMING A CADMIUM CONTAINING NANOCRYSTAL - The present invention provides a method of forming a nanocrystal of the composition CdA, with A being S or Se. The method includes forming in a suitable solvent a solution of cadmium, or a compound thereof, in a form suitable for the generation of a nanocrystal. The solvent includes a compound selected from an ether and an amine. The method further includes bringing the solution to a temperature selected in the range from about 20° C. to about 200° C. The method also includes adding at the temperature selected in the range from about 20° C. to about 200° C. the element A in a form suitable for the generation of a nanocrystal. Thereby the forming of a nanocrystal of the composition CdA is allowed. | 02-09-2012 |
20120138873 | SINTERING PROCESS FOR THERMOELECTRIC MATERIALS - A process for densifying a composite material is provided. In some instances, the process can reduce stress in a sintered component such that improved densification and/or properties of the component is provided. The process includes providing a mixture of a first material particles and second material particles, pre-sintering the mixture at a first pressure and a first temperature in order to form a pre-sintered component, and then crushing, grinding, and sieving the pre-sintered component in order to form or obtain a generally uniform composite powder. The uniform composite powder is then sintered at a second pressure and a second temperature to form a sintered component, the second pressure being greater than the second pressure. | 06-07-2012 |
20120153240 | SCALABLE NANOSTRUCTURED THERMOELECTRIC MATERIAL WITH HIGH ZT - Various embodiments of the present invention create a cost-effective process that improves ZT value while enabling the TE materials to be scaled-up for mass production. Several embodiments of the invention include a thermoelectric material comprised of nanopowder and a nanomaterial. The nanomaterial may be in the form of a nanowire, nanofiber, nanotube, nanocrystal or similar form or combination of forms. Other embodiments include a method of creating a thermoelectric material through mixing and consolidating the nanomaterial and nanopowder into a solid. Additional embodiments may involve a thermoelectric module with P and N type semiconductors of the nanomaterial and nanopowder. | 06-21-2012 |
20120161084 | AFFECTING THE THERMOELECTRIC FIGURE OF MERIT (ZT) AND THE POWER FACTOR BY HIGH PRESSURE, HIGH TEMPERATURE SINTERING - A method for increasing the ZT of a semiconductor, involves creating a reaction cell including a semiconductor in a pressure-transmitting medium, exposing the reaction cell to elevated pressure and elevated temperature for a time sufficient to increase the ZT of the semiconductor, and recovering the semiconductor with an increased ZT. | 06-28-2012 |
20120168694 | Tellurium-containing nanocrystalline materials - Tellurium-containing nanocrystallites are produced by injection of a precursor into a hot coordinating solvent, followed by controlled growth and annealing. Nanocrystallites may include CdTe, ZnTe, MgTe, HgTe, or alloys thereof. The nanocrystallites can photoluminesce with quantum efficiencies as high as 70%. | 07-05-2012 |
20120199797 | HIGH-pH SYNTHESIS OF NANOCOMPOSITE THERMOELECTRIC MATERIAL - A process for forming thermoelectric nanoparticles includes the steps of providing a core material and a bismuth containing compound in a reverse micelle; providing a tellurium containing compound either in or not in a reverse micelle; reacting the bismuth containing compound with the tellurium containing compound in the presence of a base, forming a composite thermoelectric nanoparticle having a core and shell structure. | 08-09-2012 |
20120205597 | ZINC CHALCOGENIDES, DOPED ZINC CHALCOGENIDES, AND METHODS OF MAKING - A process of preparing a zinc chalcogenide includes providing a solution of 8-hydroxyquinoline; a zinc precursor; and a reaction solvent; isolating a precipitate from the solution; and calcining the precipitate to form the zinc chalcogenide. Additionally, a polymer composite may include a polymer, bis(8-hydroxyquinolinato)zinc, and elemental sulfur or bis(8-hydroxyquinolinato) | 08-16-2012 |
20120261626 | COMPOSITIONS INCLUDING CONTROLLED SEGREGATED PHASE DOMAIN STRUCTURES - A composition includes a chemical reaction product defining a first surface and a second surface, characterized in that the chemical reaction product includes a segregated phase domain structure including a plurality of domain structures, wherein at least one of the plurality of domain structures includes at least one domain that extends from a first surface of the chemical reaction product to a second surface of the chemical reaction product. | 10-18-2012 |
20120273735 | TERNARY THERMOELECTRIC MATERIAL CONTAINING NANOPARTICLES AND PROCESS FOR PRODUCING THE SAME - A thermoelectric material that comprises a ternary main group matrix material and nano-particles and/or nano-inclusions of a Group 2 or Group 12 metal oxide dispersed therein. A process for making the thermoelectric material that includes reacting a reduced metal precursor with an oxidized metal precursor in the presence of nanoparticles. | 11-01-2012 |
20120305860 | LIGHT CONVERSION EFFICIENCY ENHANCED SOLAR CELL FABRICATED WITH DOWNSHIFTING NANOMATERIAL - The light conversion efficiency of a solar cell ( | 12-06-2012 |
20120326100 | THERMOELECTRIC CONVERSION MATERIAL AND PRODUCING METHOD THEREOF; AND THERMOELECTRIC CONVERSION ELEMENT USING THE SAME - Thermoelectric conversion materials, expressed by the following formula: Bi | 12-27-2012 |
20130001480 | AFFECTING THE THERMOELECTRIC FIGURE OF MERIT (ZT) AND THE POWER FACTOR BY HIGH PRESSURE, HIGH TEMPERATURE SINTERING - A method for increasing the ZT of a material, involves creating a reaction cell including a material in a pressure-transmitting medium, exposing the reaction cell to elevated pressure and elevated temperature for a time sufficient to increase the ZT of the material, and recovering the material with an increased ZT. | 01-03-2013 |
20130032767 | OCTAPOD SHAPED NANOCRYSTALS AND USE THEREOF - This invention relates to the controlled growth of uniform octapod-shaped colloidal nanocrystals and use thereof. These octapod-shaped nanocrystals can be applied in many fields of technology. This represents the first approach reported so far for the predictable and controlled fabrication of octapod-shaped nanocrystals. The synthesis approach is applicable to a broad range of materials, such as group II-VI semiconductor nanocrystals but is not limited to these materials. Using several cation exchange and oxidation procedures, we also demonstrate in this application that extremely uniform octapod-shaped nanocrystals of other materials can be synthesized, including various semiconductors, metals and insulators. | 02-07-2013 |
20130037762 | Preparation of Stable, Bright Luminescent Nanoparticles Having Compositionally Engineered Properties - A method is provided for preparing luminescent semiconductor nanoparticles composed of a first component X, a second component A, and a third component B, wherein X, A, and B are different, by combining B with X and A in an amount such that the molar ratio B:(A+B) is in the range of approximately 0.001 to 0.20 and the molar ratio X:(A+B) is in the range of approximately 0.5:1.0 to 2:1. The characteristics of these nanoparticles can be substantially similar to those of nanoparticles containing only X and B while maintaining many useful properties characteristic of nanoparticles containing only X and A; and can additionally exhibit emergent properties such as a peak emission energy less than that characteristic of a particle composed of XA or XB alone. This method is particularly applicable to the preparation of stable, bright nanoparticles that emit in the red to infrared regions of the electromagnetic spectrum. | 02-14-2013 |
20130056691 | Metal Oxide Semiconductor Films, Structures, and Methods - Materials and structures for improving the performance of semiconductor devices include ZnBeO alloy materials, ZnCdOSe alloy materials, ZnBeO alloy materials that may contain Mg for lattice matching purposes, and BeO material. The atomic fraction x of Be in the ZnBeO alloy system, namely, Zn | 03-07-2013 |
20130087747 | Quantum Confined Thermoelectric Compositions - Embodiments of the invention relate generally to nanocrystal compositions of matter. In one embodiment, the invention provides a composition comprising: a matrix material; and a plurality of quantum confined semiconductor nanocrystals embedded in the matrix material, wherein the composition has a first grain size of less than approximately 500 nm. | 04-11-2013 |
20130092886 | METHOD OF MAKING HIGHLY-CONFINED SEMICONDUCTOR NANOCRYSTALS - A method of making a colloidal solution of high confinement semiconductor nanocrystals includes: forming a first solution by combining a solvent, growth ligands, and at most one semiconductor precursor; heating the first solution to the nucleation temperature; and adding to the first solution, a second solution having a solvent, growth ligands, and at least one additional and different precursor than that in the first solution to form a crude solution of nanocrystals having a compact homogenous semiconductor region. The method further includes: waiting 0.5 to 20 seconds and adding to the crude solution a third solution having a solvent, growth ligands, and at least one additional and different precursor than those in the first and second solutions; and lowering the growth temperature to enable the formation of a gradient alloy region around the compact homogenous semiconductor region, resulting in the formation of a colloidal solution of high confinement semiconductor nanocrystals. | 04-18-2013 |
20130134366 | Simultaneous Optimization of Absorption and Emission of Nanocrystals - The present invention relates to semiconductor nanocrystals having, simultaneously, an emission center surrounded by at least one absorbing shell and a protective exterior shell. | 05-30-2013 |
20130140504 | TERNARY THERMOELECTRIC MATERIAL CONTAINING NANOPARTICLES AND PROCESS FOR PRODUCING THE SAME - A thermoelectric material that comprises a ternary main group matrix material and nano-particles and/or nano-inclusions of a Group 2 or Group 12 metal oxide dispersed therein. A process for making the thermoelectric material that includes reacting a reduced metal precursor with an oxidized metal precursor in the presence of nanoparticles. | 06-06-2013 |
20130140505 | BINARY THERMOELECTRIC MATERIAL CONTAINING NANOPARTICLES AND PROCESS FOR PRODUCING THE SAME - A thermoelectric material that comprises a binary main group matrix material and nano-particles and/or nano-inclusions of metal oxide dispersed therein, and has electrical properties of ternary doped materials. A process for making the thermoelectric material that includes reacting a reduced metal precursor with an oxidized metal precursor in the presence of nanoparticles. | 06-06-2013 |
20130140506 | HOST-GUEST MATERIALS HAVING TEMPERATURE-DEPENDENT DUAL EMISSION - A composition is provided comprising a host material and a luminescent dopant. The composition exhibits dual luminescent emission peaks, one each for the host material and the luminescent dopant. The intensity of the emission peaks vary in intensity as a result of the changing temperature of the composition. This quality enables the composition to be used for ratiometric optical thermometry, including exemplary applications, such as in situ temperature sensing. | 06-06-2013 |
20130153837 | SEMICONDUCTOR NANOPARTICLE AGGREGATE AND PRODUCTION METHOD FOR SEMICONDUCTOR NANOPARTICLE AGGREGATE - A semiconductor nanoparticle aggregate containing semiconductor nanoparticles with a core/shell structure is formed by controlling with physical energy the aggregation state of an agglomerate from agglomerated semiconductor nanoparticles. | 06-20-2013 |
20130221290 | NANOCOMPOSITE THERMOELECTRIC CONVERSION MATERIAL, METHOD OF PRODUCING SAME, AND THERMOELECTRIC CONVERSION ELEMENT - A nanocomposite thermoelectric conversion material is provided in which crystal grains of a thermoelectric material parent phase are stacked in a laminar configuration and are oriented, the width of the crystal grains perpendicular to the direction of this orientation is in a range from at least 5 nm to less than 20 nm, and insulating nanoparticles are present dispersed at the grain boundaries. Also provided is a method of producing a nanocomposite thermoelectric conversion material, by which the crystal grains of a thermoelectric material parent phase are oriented by cooling a material under compression at a cooling rate of at least 1° C./minute to less than 20° C./minute. A thermoelectric conversion element that contains the aforementioned nanocomposite thermoelectric conversion material is also provided. | 08-29-2013 |
20130234079 | TERNARY THERMOELECTRIC MATERIAL CONTAINING NANOPARTICLES AND PROCESS FOR PRODUCING THE SAME - A thermoelectric material that comprises a ternary main group matrix material and nano-particles and/or nano-inclusions of a Group 2 or Group 12 metal oxide dispersed therein. A process for making the thermoelectric material that includes reacting a reduced metal precursor with an oxidized metal precursor in the presence of nanoparticles. | 09-12-2013 |
20130264526 | MOLECULAR PRECURSORS AND PROCESSES FOR PREPARING COPPER INDIUM GALLIUM SULFIDE/SELENIDE COATINGS AND FILMS - This invention relates to molecular precursors and processes for preparing coated substrates and films of copper indium gallium sulfide/selenides (CIGS/Se). Such films are useful in the preparation of photovoltaic devices. This invention also relates to processes for preparing coated substrates and for making photovoltaic devices. | 10-10-2013 |
20130284989 | Method for preparing and use of Sb2Te3 nanocrystals in thermoelectric materials - Disclosed are a thermoelectric material and a method of forming a thermoelectric material having an optimal stoichiometry, the method including obtaining a first precursor material, wherein the first precursor material is an antimony precursor, and obtaining a second precursor material, wherein the second precursor is chosen from the group consisting of a tellurium precursor and a selenium precursor. The method further includes combining the precursor materials, heating the combination of precursor materials, and isolating a plurality of semiconductor nanocrystals from the heated precursor materials. | 10-31-2013 |
20140077136 | ELECTROCONDUCTIVE PARTICLES - An electroconductive particle having a core particle and a tin oxide-containing coating layer on the core particle. The tin oxide of the coating layer has a crystallite size of 70 to 200 Å. The electroconductive particle preferably has a ratio of R | 03-20-2014 |
20140084224 | PROCESS FOR PREPARING LITHIUM SULFIDE - The invention relates to a novel process for preparing lithium sulfide and to the use thereof, wherein a reaction of lithium-containing strong bases with hydrogen sulfide is undertaken in an aprotic organic solvent within the temperature range from −20 to 120° C. under inert conditions. The lithium sulfide obtained by the process is used as a positive material in a galvanic element or for the synthesis of Li ion-conductive solids, especially for the synthesis of glasses, glass ceramics or crystalline products. | 03-27-2014 |
20140138590 | PHOSPHOR FOR DISPERSION-TYPE EL, DISPERSION-TYPE EL DEVICE, AND METHOD OF MANUFACTURING THE SAME - Provided is a phosphor for a dispersion-type EL that may be manufactured in a simple process and may provide stable, high brightness and light emission efficiency. The phosphor for a dispersion-type EL according to the present invention includes a mixture of an electron-accepting phosphor particle ( | 05-22-2014 |
20140284528 | SEMICONDUCTOR NANOPARTICLES AND FLUORESCENT PROBE FOR BIOLOGICAL LABELING - Semiconductor nanoparticles of the present invention are particles each having a core-shell structure that includes a core and a shell surrounding the core. The core includes (AgIn) | 09-25-2014 |
20140312286 | METHOD OF MAKING SEMICONDUCTOR NANOCRYSTALS - A method for preparing semiconductor nanocrystals includes reacting one or more semiconductor nanocrystal precursors in a liquid medium in the presence of a boronic compound at a reaction temperature resulting in semiconductor nanocrystals. Semiconductor nanocrystals are also disclosed. | 10-23-2014 |
20140361228 | PROCESSES FOR SYNTHESIZING NANOCRYSTALS - A process of synthesizing nanocrystals, the process including: obtaining a metal precursor, a non-metal precursor, a ligand compound, and an ionic liquid; and contacting the metal precursor, the non-metal precursor, the ligand compound, and the ionic liquid to form a mixture and synthesize a first semiconductor nanocrystal. | 12-11-2014 |
20150034884 | METHOD FOR PRODUCING SEMICONDUCTOR MICROPARTICLES AND THE MICROPARTICLES - It is an object to provide a method for producing compound semiconductor particles in which monodisperse compound semiconductor particles can be prepared according to the intended object, clogging with products does not occur due to self-dischargeability, a large pressure is not necessary, and productivity is high. In producing compound semiconductor particles by separating and precipitating, in a fluid, semiconductor raw materials, the fluid is formed into a thin film fluid between two processing surfaces arranged so as to be able to approach to and separate from each other, at least one of which rotates relative to the other, and the semiconductor raw materials are separated and precipitated in the thin film fluid. Further, in producing semiconductor microparticles containing semiconductor elements by reacting a compound containing semiconductor elements, in a fluid, with a reducing agent, the fluid is formed into a thin film fluid between two processing surfaces arranged so as to be able to approach to and separate from each other, at least one of which rotates relative to the other, and the compound containing semiconductor elements is reacted with the reducing agent in the thin film fluid. | 02-05-2015 |
20150364763 | HIGH ENERGY MATERIALS FOR A BATTERY AND METHODS FOR MAKING AND USE - A composition for forming an electrode. The composition includes a metal fluoride compound doped with a dopant. The addition of the dopant: (i) improves the bulk conductivity of the composition as compared to the undoped metal fluoride compound; (ii) changes the bandgap of the composition as compared to the undoped metal fluoride compound; or (iii) induces the formation of a conductive metallic network. A method of making the composition is included. | 12-17-2015 |
20160039673 | PROCESS FOR MAKING PRECISION NANOPARTICLES BY HYDROTHERMAL FLOW MANUFACTURING - A continuous reaction system (CRS) allows a method to prepare quantum dots (QDs) in a continuous manner with high precision. The CRS pumps a plurality of reagent fluids into one or more mixing sites to form a reaction fluid that is carried through a heating chamber at elevated pressures to carry out hydrothermal growth of the QDs. The pumps and heating chamber are controlled with a high precision by employing a detector downstream of the heating chamber to provide a signal that is dependent on the composition and size of the QDs. The signal is provided to a signal processor that provides a signal that control the flow rates and temperature parameters in the system. The QDs produced in this manner are consistent in size and composition and can be of a single semiconductor composition or can be core-shell QDs with a shell semiconductor formed on a core semiconductor. | 02-11-2016 |
20160053174 | QUANTUM DOTS, RODS, WIRES, SHEETS, AND RIBBONS, AND USES THEREOF - Described are Zn | 02-25-2016 |
20160096993 | SEMICONDUCTOR STRUCTURE HAVING NANOCRYSTALLINE CORE AND NANOCRYSTALLINE SHELL PAIRING WITH COMPOSITIONAL TRANSITION LAYER - Semiconductor structures having a nanocrystalline core and nanocrystalline shell pairing with compositional transition layers are described. In an example, a semiconductor structure includes a nanocrystalline core composed of a first semiconductor material. A nanocrystalline shell composed of a second semiconductor material surrounds the nanocrystalline core. A compositional transition layer is disposed between, and in contact with, the nanocrystalline core and nanocrystalline shell and has a composition intermediate to the first and second semiconductor materials. In another example, a semiconductor structure includes a nanocrystalline core composed of a first semiconductor material. A nanocrystalline shell composed of a second semiconductor material surrounds the nanocrystalline core. A nanocrystalline outer shell surrounds the nanocrystalline shell and is composed of a third semiconductor material. A compositional transition layer is disposed between, and in contact with, the nanocrystalline shell and the nanocrystalline outer shell and has a composition intermediate to the second and third semiconductor materials. In the examples, an insulator coating surrounds and encapsulates the structure. | 04-07-2016 |
20160111619 | HIGH PERFORMANCE HIGH TEMPERATURE THERMOELECTRIC COMPOSITES WITH METALLIC INCLUSIONS - The present invention provides a composite thermoelectric material. The composite thermoelectric material can include a semiconductor material comprising a rare earth metal. The atomic percent of the rare earth metal in the semiconductor material can be at least about 20%. The composite thermoelectric material can further include a metal forming metallic inclusions distributed throughout the semiconductor material. The present invention also provides a method of forming this composite thermoelectric material. | 04-21-2016 |
20160141067 | ELECTRICALLY CONDUCTIVE THIN FILMS - An electrically conductive thin film including: a material including a compound represented by Chemical Formula 1 and having a layered crystal structure, | 05-19-2016 |
20160149059 | AGGLOMERATED PRECURSOR FOR MANUFACTURING LIGHT ABSORPTION LAYER OF SOLAR CELLS AND METHOD OF MANUFACTURING THE SAME - Disclosed are an aggregated precursor for manufacturing a light absorption layer of solar cells comprising a first phase comprising a copper (Cu)-containing chalcogenide and a second phase comprising an indium (In) and/or gallium (Ga)-containing chalcogenide wherein 30% or more aggregated precursors based on the total amount of precursors are divided into particle aggregates comprising first phases and/or second phases, or independent particles having first phases or second phases, in an ink solvent for manufacturing the light absorption layer, and a method of manufacturing the same. | 05-26-2016 |
20160380136 | QUANTUM-DOT-IN-PEROVSKITE SOLIDS - The present disclosure provides a composite material of a pre-formed crystalline or polycrystalline semiconductor particles embedded in a crystalline or polycrystalline perovskite matrix material. The pre-formed crystalline or polycrystalline semiconductor particles and and crystalline or polycrystalline perovskite being selected so that any lattice mismatch between the two lattices does not exceed about 10%. The pre-formed crystalline or polycrystalline semiconductor particles and said crystalline or polycrystalline perovskite matrix material have lattice planes that are substantially aligned. | 12-29-2016 |