| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 252519100 |
Compound viewed as composition (i.e., wherein atoms or molecules in a chemical formula are not present as whole small integer values or cannot be multiplied by a single-digit factor to yield integer values)
| 92 |
| 252519300 |
With organic compound
| 76 |
| 252519200 |
Organometallic (e.g., soap, complex, etc.)
| 53 |
| 252519400 |
Sulfur, selenium, or tellurium containing
| 41 |
| 252519500 |
Zinc compound
| 36 |
| 252520100 |
Tin compound
| 18 |
| 252520200 |
Titanium or zirconium compound
| 17 |
| 252521200 |
Iron, cobalt, or nickel compound
| 13 |
| 252521500 |
Halogen, carbon, phosphorus, or nitrogen containing
| 6 |
| 252521300 |
Silicon containing or with silicon compound | 5 |
| 20130043442 | METAL CHLORIDE GAS GENERATOR, HYDRIDE VAPOR PHASE EPITAXY GROWTH APPARATUS, AND NITRIDE SEMICONDUCTOR TEMPLATE - A metal chloride gas generator includes: a tube reactor including a receiving section for receiving a metal on an upstream side, and a growing section in which a growth substrate is placed on a downstream side; a gas inlet pipe arranged to extend from an upstream end with a gas inlet via the receiving section to the growing section, for introducing a gas from the upstream end to supply the gas to the receiving section, and supplying a metal chloride gas produced by a reaction between the gas and the metal in the receiving section to the growing section; and a heat shield plate placed in the reactor to thermally shield the upstream end from the growing section. The gas inlet pipe is bent between the upstream end and the heat shield plate. | 02-21-2013 |
| 20100078605 | Glass thick film embedded passive material - A method for forming an embedded passive device module comprises depositing a first amount of an alkali silicate material, co-depositing an amount of embedded passive device material with the amount of alkali silicate material; and thermally processing the amount of alkali silicate material and the amount of embedded passive device material at a temperature sufficient to cure the amount of alkali silicate material and the amount of embedded passive device material and form a substantially moisture free substrate. | 04-01-2010 |
| 20100155676 | SEMICONDUCTOR NANOCRYSTAL COMPOSITES - Semiconductor nanocrystal composites are provided. The composites include semiconductor nanocrystals, a radical scavenger and a matrix material. | 06-24-2010 |
| 20110001097 | SILICON COMPOSITE, MAKING METHOD, AND NON-AQUEOUS ELECTROLYTE SECONDARY CELL NEGATIVE ELECTRODE MATERIAL - A silicon composite comprises silicon particles whose surface is at least partially coated with a silicon carbide layer. It is prepared by subjecting a silicon powder to thermal CVD with an organic hydrocarbon gas and/or vapor at 900-1,400° C., and heating the powder for removing an excess free carbon layer from the surface through oxidative decomposition. | 01-06-2011 |
| 20120261627 | Compositions of Matter, and Methods of Removing Silicon Dioxide - Some embodiments include methods of removing silicon dioxide in which the silicon dioxide is exposed to a mixture that includes activated hydrogen and at least one primary, secondary, tertiary or quaternary ammonium halide. The mixture may also include one or more of thallium, BX | 10-18-2012 |
| 252521100 |
Rare earth metal compound | 5 |
| 20110108778 | THERMOELECTRIC SKUTTERUDITE COMPOSITIONS AND METHODS FOR PRODUCING THE SAME - Compositions related to skutterudite-based thermoelectric materials are disclosed. Such compositions can result in materials that have enhanced ZT values relative to one or more bulk materials from which the compositions are derived. Thermo-electric materials such as n-type and p-type skutterudites with high thermoelectric figures-of-merit can include materials with filler atoms and/or materials formed by compacting particles (e.g., nanoparticles) into a material with a plurality of grains each having a portion having a skutterudite-based structure. Methods of forming thermoelectric skutterudites, which can include the use of hot press processes to consolidate particles, are also disclosed. The particles to be consolidated can be derived from (e.g., grinded from), skutterudite-based bulk materials, elemental materials, other non-Skutterudite-based materials, or combinations of such materials. | 05-12-2011 |
| 20090001329 | RARE EARTH-OXIDES, RARE EARTH-NITRIDES, RARE EARTH-PHOSPHIES, AND TERNARY ALLOYS WITH SILICON - Atomic layer epitaxy (ALE) is applied to the fabrication of new forms of rare-earth oxides, rare-earth nitrides and rare-earth phosphides. Further, ternary compounds composed of binary (rare-earth oxides, rare-earth nitrides and rare-earth phosphides) mixed with silicon and or germanium to form compound semiconductors of the formula RE-(O, N, P)—(Si,Ge) are also disclosed, where RE=at least one selection from group of rare-earth metals, O=oxygen, N=nitrogen, P=phosphorus, Si=silicon and Ge=germanium. The presented ALE growth technique and material system can be applied to silicon electronics, opto-electronic, magneto-electronics and magneto-optics devices. | 01-01-2009 |
| 20090065748 | Composite Materials for Infrared Sensing Markers - The present invention discloses composite materials for distant laser sensing in the infrared spectral region. The composites are disclosed to consist of the conductive polymer, the infrared active compound and the thermoplastic matrix polymer. | 03-12-2009 |
| 20120175570 | TABLET FOR ION PLATING, PRODUCTION METHOD THEREFOR AND TRANSPARENT CONDUCTIVE FILM - A tablet for ion plating which enables to attain high rate film-formation of a transparent conductive film suitable for a blue LED or a solar cell, and a noduleless film-formation not generating splash, an oxide sintered body most suitable for obtaining the same, and a production method thereof. | 07-12-2012 |
| 20120241696 | TABLET FOR VAPOR DEPOSITION AND METHOD FOR PRODUCING THE SAME - A tablet for vapor deposition of the present invention is characterized in that, crystal grains appearing on a fracture surface of an indium oxide sintered body have such a grain diameter distribution that the percentage due to crystal grains having a grain diameter corresponding to a highest peak is 20% or less; and the tablet for vapor deposition is produced by a method comprising: a first step of obtaining a calcined powder by mixing an indium oxide powder and a cerium oxide powder, and subjecting the mixture to a heat treatment at 1300° C. or above and 1550° C. or below; a second step of obtaining a granulated powder by mixing an uncalcined indium oxide powder and/or an uncalcined cerium oxide powder with the obtained calcined powder such that the ratio of the calcined powder is 50% by mass to 80% by mass, both inclusive, followed by granulation; and a third step of obtaining an indium oxide sintered body containing cerium as a dopant by molding the obtained granulated powder, thereby forming a molded body, and then sintering the molded body at a temperature which is 1100° C. or above and 1350° C. or below, and which is lower than the temperature of the heat treatment on the calcined powder in the first step by 200° C. or more. | 09-27-2012 |
| 252520300 |
Silver, gold, or platinum compound | 3 |
| 20090294743 | Formulation for Obtaining a Conductive Concrete Mixture - A conductive concrete through which electrical power can pass, such as to provide cathodic protection for the reinforcing steel and resistance to chemical attacks. The conductive concrete mixture has greater mechanical strength properties than those of a standard concrete, low volume weight and mechanical characteristics that enable same to be used in both a structural and architectonic manner. In addition, the concrete is resistant to corrosion owing to the formulation thereof. The invention comprises an electricity conductor having a low water absorption value and a very low rupture deformation, thereby providing great structural stability. The purpose of the invention is to provide a type of concrete which is different from those currently available, owing to the formulation, mixture and novel characteristics thereof, and which is essentially characterised in that it combines the advantages of existing concretes with electrical conductivity. Moreover, the physical and chemical properties of the inventive concrete are greater than those of existing concretes, such as low volume weight. | 12-03-2009 |
| 20090146117 | METHOD FOR PRODUCING SURFACE-TREATED SILVER-CONTAINING POWDER AND SILVER PASTE USING SURFACE-TREATED SILVER-CONTAINING POWDER - A method for producing a surface-treated silver-containing powder comprises vacuum freeze drying a dispersion liquid, which is obtained by dispersing silver or silver compound particles (a) in a solvent together with a surfactant (b) of an alkylamine type or an alkylamine salt type, or a phosphate type having a phosphorus content of 0.5 to 10% by mass so that the surfactant (b) is adsorbed in the surface of the silver or silver compound particles (a), thereby producing a silver-containing powder (c) whose surface is treated with the surfactant (b). Moreover, a silver paste is produced by dispersing the surface-treated silver-containing powder (c) in a solvent, or in a solvent with a resin. | 06-11-2009 |
| 20080277631 | Electrically Conductive Metal Impregnated Elastomer Materials and Methods of Forming Electrically Conductive Metal Impregnated Elastomer Materials - An electrically conductive, compliant elastomer material that is impregnated with a metal is formed by combining a metal salt with an elastomer precursor material to form a metal salt/precursor mixture, curing the metal salt/precursor mixture to form an elastomer impregnated with metal salt, and treating the elastomer impregnated with metal salt with a chemical reducing composition so as to convert at least a portion of the metal salt impregnated within the elastomer to a metal. The elastomer can be subjected to a suitable solvent that swells the elastomer during the chemical reduction of the metal salt to metal, which enhances the mechanical and electrical properties of the resultant metal impregnated elastomer material. | 11-13-2008 |
| 252520400 |
Vanadium compound | 1 |
| 20100044651 | METHOD FOR THE PRODUCTION OF LITHIUM-RICH METAL OXIDES - The present invention relates to a process for preparing lithium-rich metal oxides and also the lithium-rich metal oxides which can be obtained by this process. Furthermore, the invention relates to the use of lithium-rich metal oxides for producing a cathode for a battery, in particular a lithium ion battery, and also a cathode for a lithium ion battery which comprises lithium-rich metal oxides. | 02-25-2010 |
| Entries |
| Document | Title | Date |
|---|
| 20100038605 | TRANSPARENT CONDUCTIVE FILM, SINTERED BODY TARGET FOR TRANSPARENT CONDUCTIVE FILM FABRICATION, AND TRANSPARENT CONDUCTIVE BASE MATERIAL AND DISPLAY DEVICE USING THE SAME - A transparent conductive film which is amorphous, has a high transmittance of light in the visible region of short wavelengths, and is hard to beak with respect to bending is provided. The transparent conductive film is an amorphous oxide film composed of Ga, In, and O, in which a Ga content ranges from 35 at. % to 45 at. % with respect to all metallic atoms, a resistivity ranges 1.2×10 | 02-18-2010 |
| 20130082218 | SINTERED OXIDE MATERIAL, TARGET COMPRISING SAME, AND OXIDE SEMICONDUCTOR THIN FILM - An oxide sintered body including an oxide of indium and aluminum and having an atomic ratio Al/(Al+In) of 0.01 to 0.08. | 04-04-2013 |
| 20100108953 | MATERIAL FOR PROTECTIVE COATINGS ON HIGH TEMPERATURE-RESISTANT CHROMIUM OXIDE-FORMING SUBSTRATES, METHOD FOR THE PRODUCTION THEREOF, AND USE THEREOF - The invention relates to a material for the formation of protective layers resistant to high temperatures on chromium oxide forming substrates, to a manufacturing method and to a use of these materials. It is suitable for a use as a chromium evaporation layer for metallic alloys containing chromium in the high temperature range. It is the object of the invention to provide a material for applications as a protective layer for chromium oxide forming alloys of high temperature resistance which is thermally and mechanically permanently stable and ensures a high electrical conductivity at the operating temperature of the fuel cell. In accordance with the invention, the material is formed from a spinel phase and an oxidic secondary phase which is preferably formed with an oxidic compound containing manganese. | 05-06-2010 |
| 20100065791 | SEMICONDUCTOR MATERIAL FOR RADIATION ABSORPTION AND DETECTION - A semiconductor material for radiation absorption and detection comprising a composition of stoichiometry Li(M | 03-18-2010 |
| 20120217454 | METHOD FOR FORMING AN ELECTRICALLY CONDUCTIVE OXIDE FILM, AN ELECTRICALLY CONDUCTIVE OXIDE FILM, AND USES FOR THE SAME - A method for forming an electrically conductive oxide film ( | 08-30-2012 |
| 20110278509 | METHOD FOR PREPARING MAYENITE-CONTAINING OXIDE AND METHOD FOR PREPARING ELECTROCONDUCTIVE MAYENITE-CONTAINING OXIDE - To provide a method for preparing a mayenite-containing oxide containing a mayenite type compound and having a hydride ion density of at least 1×10 | 11-17-2011 |
| 20080283801 | GROUP 13 NITRIDE PHOSPHOR AND METHOD OF PREPARING THE SAME - Provided are a group 13 nitride phosphor having high luminous intensity and excellent reliability obtained by preparing group 13 nitride crystallites homogeneously dispersible in a solid matrix by capping surface defects and homogeneously dispersing the group 13 nitride crystallites in the solid matrix and an efficient method of preparing the same. The present invention relates to a group 13 nitride phosphor consisting of group 13 nitride crystallites having a group 13 element dispersed in a matrix of a silica gel solid layer, with a diamine compound bonded to the surfaces of the group 13 nitride crystallites and the silica gel solid layer, and a method of preparing the same. | 11-20-2008 |
| 20080308774 | Sputtering Target, Transparent Conductive Film, and Their Manufacturing Method - A sputtering target including indium oxide and tin oxide, the content by percentage of the tin atoms therein being from 3 to 20 atomic % of the total of the indium atoms and the tin atoms, and the maximum grain size of indium oxide crystal in the sputtering target being 5 μm or less. When a transparent conductive film is formed by sputtering, this sputtering target makes it possible to suppress the generation of nodules on the surface of the target and to conduct the sputtering stably. | 12-18-2008 |
| 20090261306 | NON-LEAD RESISTOR COMPOSITION - A non-lead composition for use as a thick-film resistor paste in electronic applications. The composition comprises particles of Li | 10-22-2009 |
| 20080303004 | Method for producing lithium transition metal polyanion powders for batteries - This invention relates to a process for producing an improved powder for the positive electrode of lithium ion batteries wherein the powder comprises lithium, vanadium and phosphate. The process includes forming a suspension of the precursors with a high boiling temperature solvent and heating the suspension to a reaction temperature of between 250° C. and 400° C. to convert the precursors to the desired solid product. The solid product is separated from the suspension and is heated to a higher temperature to crystallize the product. The resulting product retains a small particle size thus avoiding the need for milling or other processing to reduce the product to a particle size suited for batteries. | 12-11-2008 |
| 20110108776 | INSULATED ULTRAFINE POWDER, PROCESS FOR PRODUCING SAME AND RESIN COMPOSITE MATERIAL WITH HIGH DIELECTRIC CONSTANT USING SAME - There are disclosed insulated ultrafine powder comprising electroconductive ultrafine powder which is in the form of sphere, spheroid or acicular each having a minor axis in the range of 1 to 100 nm and an insulating film applied thereto; a process for producing the same which is capable of covering the surfaces of the insulated ultrafine powder with the insulating film having a thickness in the range of 0.3 to 100 nm without causing any clearance or vacancy; and a resin composite material which uses the same. A high dielectric constant of the material is assured by adding a small amount of insulated ultrafine powder wherein an insulating film is applied to the electroconductive ultrafine powder, while maintaining the processability and moldability that are the characteristics inherent in a resin material. | 05-12-2011 |
| 20110006270 | CATHODE MATERIALS FOR SECONDARY (RECHARGEABLE) LITHIUM BATTERIES - The invention relates to materials for use as electrodes in an alkali-ion secondary (rechargeable) battery, particularly a lithium-ion battery. The invention provides transition-metal compounds having the ordered-olivine, a modified olivine, or the rhombohedral NASICON structure and the polyanion (PO | 01-13-2011 |
| 20110057154 | CONDUCTIVE DOPED METAL-GLASS COMPOSITIONS AND METHODS - Provided herein are conductive glass-metal compositions, as well as methods of making and using such compositions. In one example, the compositions include gold (Au) doped lithium-borate glasses shown to exhibit a transition from ionic to electronic conduction within the same sample. This is achieved via appropriate heat treatment, and particularly by heat treatment after annealing, wherein the post-annealing heat treatment is performed at temperatures below the glass transition temperature (T | 03-10-2011 |
| 20090242852 | DEPOSITION OF TERNARY OXIDE FILMS CONTAINING RUTHENIUM AND ALKALI EARTH METALS - Methods and compositions for the deposition of ternary oxide films containing ruthenium and an alkali earth metal. | 10-01-2009 |
| 20110084239 | Transparent Conducting Oxides and Production Thereof - Transparent conducting oxides and production thereof are disclosed. An exemplary method of producing a transparent conducting oxide (TCO) material may comprise: providing a TCO target (110) doped with either a high-permittivity oxide or a low-permittivity oxide in a process chamber (100). The method may also comprise depositing a metal oxide on the target (110) to form a thin film having enhanced optical properties without substantially decreasing electrical quality. | 04-14-2011 |
| 20090321692 | Nanostructured material comprising semiconductor nanocrystal complexes - A material and corresponding method of making a material are disclosed. The material includes a first semiconductor material and a plurality of core semiconductor nanocrystals dispersed in the first semiconductor material. | 12-31-2009 |
| 20080203361 | Method and Apparatus for Growth of Multi-Component Single Crystals - A method and apparatus for growth of uniform multi-component single crystals is provided. The single crystal material has at least three elements and has a diameter of at least 50 mm, a dislocation density of less than 100 cm | 08-28-2008 |
| 20110006269 | SOLVENT-FREE SYNTHESIS OF SOLUBLE NANOCRYSTALS - Methods for preparing high quality and high yields of nanocrystals, i.e., metal-oxide-based nanocrystals, using a novel solvent-free method. The nanocrystals advantageously comprise organic alkyl chain capping groups and are stable in air and in nonpolar solvents. | 01-13-2011 |
| 20120261624 | Metal Doped Semiconductor Nanocrystals And Methods of Making The Same - Doped semiconductor nanocrystals and methods of making the same are provided. | 10-18-2012 |
| 20130140502 | SPUTTERING TARGET - An oxide sintered body including an oxide of indium (In), gallium (Ga), and positive trivalent and/or positive tetravalent metal X, wherein the amount of the metal X relative to the total amount of In and Ga is 100 to 10000 ppm (weight). | 06-06-2013 |
| 20090236568 | ALKALI EARTH METAL PRECURSORS FOR DEPOSITING CALCIUM AND STRONTIUM CONTAINING FILMS - Methods and compositions for the deposition of a film on a substrate. In general, the disclosed compositions and methods utilize a precursor containing calcium or strontium. | 09-24-2009 |
