Class / Patent application number | Description | Number of patent applications / Date published |
252790500 | Alkali metal hydroxide containing | 23 |
20090001315 | ALKALINE AQUEOUS SOLUTION COMPOSITION USED FOR WASHING OR ETCHING SUBSTRATES - As a washing liquid and an etching solution for semiconductor substrates and glass substrates, alkaline aqueous solutions are used; however, since metal impurities are adsorbed on the substrate surface during processing, a next process for removing the adsorbed metal impurities is required. In addition, when a washing liquid is used, it cannot wash off metal impurities; therefore an acid washing process is required. The present invention provides an aqueous solution composition, which is an alkaline aqueous solution but is able to prevent adsorption of metal impurities, which also has cleaning capability. | 01-01-2009 |
20090014683 | SELECTIVE POLISH FOR FABRICATING ELECTRONIC DEVICES - A selective polish for fabricating electronic devices is disclosed. The selective polish may include the use of a slurry that facilitates the selective polish of a first component but does not substantially polish a second component. | 01-15-2009 |
20090127501 | Polishing Composition for Silicon Wafer - The present invention relates to a polishing composition for silicon wafer comprising silica, a basic compound, a polyaminopolycarboxylic acid compound having hydroxy group, and water. The polishing composition can prevent metal contamination by nickel, chromium, iron, copper or the like, particularly copper contamination in polishing of silicon wafer. | 05-21-2009 |
20090218542 | ANISOTROPIC SILICON ETCHANT COMPOSITION - An etchant composition contains (a) an alkaline compound mixture of an organic alkaline compound and inorganic alkaline compound and (b) a silicon-containing compound. The organic alkaline compound is composed of one or more ingredients from quaternary ammonium hydroxide and ethylenediamine. The inorganic alkaline compound is composed of one or more ingredients from sodium hydroxide, potassium hydroxide, ammonia and hydrazine. The silicon-containing inorganic compound is composed of one or more ingredients from metal silicon, fumed silica, colloidal silica, silica gel, silica sol, diatomaceous earth, acid clay and activated clay, and the silicon-containing organic compound is composed of one or more ingredients from quaternary ammonium salts of alkyl silicate and quaternary ammonium salts of alkyl silicic acid. | 09-03-2009 |
20100025624 | ALKALI ETCHING LIQUID FOR SILICON WAFER AND ETCHING METHOD USING SAME - An alkali etching liquid for a silicon wafer that includes an aqueous solution of potassium hydroxide, and from 0.1 g/L to 0.5 g/L of diethylene triamine pentaacetic acid. Furthermore, the Fe concentration of the aqueous solution of potassium hydroxide is no more than 50 ppb. An etching method that including a step of etching a silicon wafer with a resistivity of no more than 1 Ω·cm using the etching liquid. | 02-04-2010 |
20100078589 | METHOD FOR PURIFYING CHEMICAL ADDED WITH CHELATING AGENT - A chelate complex is removed from a chemical which is used in a semiconductor production process and contains a compound having a chelating ability, and the cleaning load is also reduced. Specifically disclosed is a method for purifying a chemical which is used in a semiconductor production process and contains a compound having a chelating ability, wherein a chelate complex which is formed from impurity metals such as nickel and copper contained in an alkaline chemical is removed from the chemical by treating the alkaline chemical with an organic complex adsorbing material. | 04-01-2010 |
20100090158 | ALKALINE AQUEOUS SOLUTION COMPOSITION FOR TREATING A SUBSTRATE - An aqueous solution of ammonia, tetramethylammonium hydroxide and sodium hydroxide, etc. has been used as a cleaning liquid and an etching liquid of a semiconductor substrate and a glass substrate. However, the metal impurities in the alkali components are adsorbed onto the substrate surface during treatment, so that a process for removing the adsorbed metal impurities is necessary as the next process. In addition, in the case of the cleaning liquid, though it is effective in the removal of fine particles, the metal impurities cannot be cleaned, so that it is necessary to carry out acid cleaning, which makes the process complicated. According to the present invention, the alkaline aqueous solution for treating a substrate wherein an alkali component and a specific chelating agent are combined prevents adsorption of metal impurities onto the substrate, and further cleans and removes the metals adhered to the substrate. If necessary, it is also possible to add a metal anticorrosive and a surfactant to suppress corrosion of the metal materials, or enhance affinity to the substrate and ability for removing fine particles. | 04-15-2010 |
20100090159 | Semiconductor polishing composition - A semiconductor polishing composition is provided that can, in at least one embodiment, efficiently polish a semiconductor device with high accuracy while preventing fumed silica from being agglomerated and without causing a polishing flaw in the semiconductor device. Fumed silica, of which a bulk density of powder before dispersed is 50 g/L or more and less than 100 g/L, is used as abrasive grains. This makes it possible to enhance a dispersion state of the fumed silica, and to realize reduction in transportation cost. | 04-15-2010 |
20100243950 | POLISHING AGENT FOR SYNTHETIC QUARTZ GLASS SUBSTRATE - Disclosed is a polishing agent for synthetic quartz glass substrates, which is characterized by containing a colloidal solution of a colloidal silica or the like having a colloid concentration of 20-50% by mass, and a polycarboxylic acid polymer, an acidic amino acid, a phenol or a glycosaminoglycan. | 09-30-2010 |
20110062376 | Composition and method for polishing bulk silicon - The invention provides a polishing composition comprising (a) silica, (b) one or more compounds that increases the removal rate of silicon, (c) one or more tetraalkylammonium salts, and (d) water, wherein the polishing composition has a pH of about 7 to about 11. The invention further provides a method of polishing a substrate with the polishing composition. | 03-17-2011 |
20110155949 | PROCESS FOR PRODUCTION OF ALUMINUM WHEEL - A process for producing an aluminum wheel includes a cleaning step, in which the surface of the aluminum wheel is chemically etched with an alkali cleaning liquid which contains an alkali builder, an organic builder, and a chelating agent to such an extent that the Si atomic ratio of metal Si to oxide Si is from 0.01 to 9, and a shot blast treatment step can be omitted for cleaning the surface of the aluminum wheel. | 06-30-2011 |
20110260097 | ADDITIVE FOR ALKALINE ETCHING SOLUTIONS, IN PARTICULAR FOR TEXTURE ETCHING SOLUTIONS, AND PROCESS FOR PRODUCING IT - A product is obtained by mixing at least one polyethylene glycol with a base, allowing the mixture to rest in ambient air and at a temperature of approximately 25 degrees Celsius to form two phases, and separating the less dense phase representing the product. The product is used as an additive to etching solutions. | 10-27-2011 |
20110272625 | Surface cleaning and texturing process for crystalline solar cells - Methods for surface texturing a crystalline silicon substrate are provided. In one embodiment, the method includes providing a crystalline silicon substrate, wetting the substrate with an alkaline solution comprising a wetting agent, and forming a textured surface with a structure having a depth about 1 μm to about 10 μm on the substrate. In another embodiment, a method of performing a substrate texture process includes providing crystalline silicon substrate, pre-cleaning the substrate in a HF aqueous solution, wetting the substrate with a KOH aqueous solution comprising polyethylene glycol (PEG) compound, and forming a textured surface with a structure having a depth about 3 μm to about 8 μm on the substrate. | 11-10-2011 |
20120187336 | CONDITIONING COMPOSITIONS FOR SOLAR CELLS - Method of using improved compositions for conditioning silicon surfaces during the manufacture of photovoltaic devices. Used for removing particles, organic contamination, and unwanted metals from these surfaces. Also used for removing a thin layer of silicon as required for damage removal or texturing. These conditioning and surface preparation compositions comprise one or more water soluble strongly basic components capable of producing a pH greater than 10, one or more water soluble organic amines, one or more chelating agents, and water. | 07-26-2012 |
20130207031 | POLYMER ETCHANT AND METHOD OF USING SAME - Provided is a composition for etching polymeric materials comprising an aqueous solution including an alkali metal salt and glycine. | 08-15-2013 |
20130277602 | ETCHING AGENT FOR ALUMINUM OR ALUMINUM ALLOY - A composition of an etching agent for aluminum or aluminum alloy and a treatment method thereof are provided. The etching agent does not contain a component not suitable for a wastewater treatment, such as boron and fluorine, and has stable etching performance even when performing an etching treatment continuously. The etching agent has excellent aging resistance providing good etching uniformity and corrosion resistance after etching. This etching agent is an etching agent for aluminum or aluminum alloy, including 50 parts by mass of an aminocarboxylic acid, 5 to 300 parts by mass of at least one selected from a hydroxycarboxylic acid, a dicarboxylic acid, a polycarboxylic acid, and salts thereof, and 10 to 800 parts by mass of at least one selected from a hydroxide, a carbonate, and a bicarbonate of an alkali metal, wherein an aqueous solution of the etching agent has a pH of 8 to 10. | 10-24-2013 |
20140042360 | SILICON SURFACE TEXTURING METHOD FOR REDUCING SURFACE REFLECTANCE - A method of texturing a surface of a crystalline silicon substrate is provided. The method includes immersing a crystalline silicon substrate into an aqueous alkaline etchant solution to form a pyramid shaped textured surface, with (111) faces exposed, on the crystalline silicon substrate. The aqueous alkaline etchant solution employed in the method of the present disclosure includes an alkaline component and a nanoparticle slurry component. Specifically, the aqueous alkaline etchant solution of the present disclosure includes 0.5 weight percent to 5 weight percent of an alkaline component and from 0.1 weight percent to 5 weight percent of a nanoparticle slurry on a dry basis. | 02-13-2014 |
20140191155 | COMPOSITION AND METHOD FOR POLISHING POLYSILICON - The invention provides a polishing composition comprising silica, an aminophosphonic acid, a polysaccharide, a tetraalkylammonium salt, a bicarbonate salt, an azole ring, and water, wherein the polishing composition has a pH of about 7 to about 11. The invention further provides a method of polishing a substrate with the polishing composition. | 07-10-2014 |
20140231704 | Silicon Texturing Formulations - The present disclosure includes a texture formulation that includes an aliphatic diol, an alkaline compound and water which provides a consistent textured region across a silicon surface suitable for solar cell applications. The current invention describes silicon texturing formulations that include at least one high boiling point additive. The high boiling point additive may be a derivative compound of propylene glycol or a derivative compound of ethylene glycol. Processes for texturing a crystalline silicon substrate using these formulations are also described. Additionally, a combinatorial method of optimizing the textured surface of a crystalline silicon substrate is described. | 08-21-2014 |
20140339463 | DESMEAR SOLUTION AND DESMEAR METHOD - The present invention provides a desmear solution and a desmear method using said desmear solution, the desmear solution being capable of certainly removing a smear inside a non-through hole formed in a resin substrate and also capable of forming a plating film excellent in adhesion without excessive roughening of a surface of the resin substrate. The present invention uses the desmear solution containing a permanganate having a concentration of 0.2 to 0.4 mol/L and an alkali metal hydroxide and having a molar concentration ratio of said permanganate to said alkali metal hydroxide of 1:5 to 1:20. | 11-20-2014 |
20150014579 | POLISHING COMPOSITION AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE - A polishing composition contains: silicon dioxide having an average primary particle diameter of 40 nm or more as calculated from the specific surface area determined by the BET method; a nitrogen-containing water-soluble polymer; and a basic compound. The value of B/A is 1 or more and less than 7,000 and the value of C/A is 5,000 or more and less than 1,500,000 when in one liter of the polishing composition, A is defined as the number of silicon dioxide, B is defined as the number of monomer units of the nitrogen-containing water-soluble polymer, and C is defined as the number of molecules of the basic compound. Alternatively, the value of B/A is 1 or more and less than 7,000 and the value of C/A is 5,000 or more and less than 100,000. The polishing composition is used, for example, for polishing a semiconductor substrate. | 01-15-2015 |
20150014580 | ETCHING LIQUID FOR FORMING TEXTURE - In the present invention, by using an etching liquid for silicon wafers, which comprises an aqueous solution containing (A) an alkali component and (B) a phosphonic acid derivative or a salt thereof, a good texture can be stably and uniformly formed on a wafer surface. The present invention provides a texture-forming etching liquid for silicon wafers, which is applicable to both wafers cut by a loose abrasive grain system and wafers cut by a fixed abrasive grain system with no vaporization of additive components in the region of working temperatures of from 60° C. to 95° C. | 01-15-2015 |
20150291850 | POLISHING COMPOSITION - Provided is a polishing composition with which a high glossy surface is achieved by enhancing smoothness of a surface of an alloy material while maintaining a sufficiently high polishing speed for the alloy material. The present invention relates to a polishing composition used for an application of polishing an alloy material, which contains silica particles having a primary particle average aspect ratio of at least 1.10 and a pH controlling agent. | 10-15-2015 |