Inventors list

Assignees list

Classification tree browser

Top 100 Inventors

Top 100 Assignees


ETCHING OR BRIGHTENING COMPOSITIONS

Subclass of:

252 - Compositions

Patent class list (only not empty are listed)

Deeper subclasses:

Class / Patent application numberDescriptionNumber of patent applications / Date published
252790200 Inorganic acid containing 48
252790500 Alkali metal hydroxide containing 15
Entries
DocumentTitleDate
20100155655POLISHING COMPOSITION - An object of one embodiment of the present invention is to provide a polishing composition that can achieve high polishing rate and as well can improve flatness. A polishing composition of an embodiment of the invention is a polishing composition suitable for a metal film, in particular, a copper film, and contains a basic compound containing an ammonium group, alkylbenzene sulfonate having an alkyl group with carbon number of from 9 to 18, and hydrogen peroxide, the remainder being water. Ammonium hydroxide can be used as the basic compound, and dodecylbenzene sulfonate or the like can be used as the alykbenzene sulfonate.06-24-2010
20120175550AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING AND CHEMICAL MECHANICAL POLISHING METHOD USING SAME - A chemical mechanical polishing aqueous dispersion includes (A) silica particles, and (B) a compound that includes two or more carboxyl groups, a particle size (Db) of the silica particles (A) that is detected with a highest detection frequency (Fb) being larger than 35 nm and 90 nm or less, and a ratio (Fa/Fb) of a detection frequency (Fa) that corresponds to a particle size (Da) of larger than 90 nm and 100 nm or less to the detection frequency (Fb) being 0.5 or less when measuring a particle size distribution of the chemical mechanical polishing aqueous dispersion by a dynamic light scattering method.07-12-2012
20100072418Polishing slurry - A polishing slurry used for chemical mechanical polishing of a barrier layer and an interlayer dielectric film in manufacturing a semiconductor integrated circuit includes two colloidal silicas which have association degrees differing from each other by at least 0.5 and primary particle sizes differing from each other by 5.0 nm or less, an anticorrosive, and an oxidizer. The polishing slurry is used in the barrier metal CMP and is capable of achieving a good polishing rate on the interlayer dielectric film while simultaneously reducing scratching which is a defect on the polished surface.03-25-2010
20090121178Polishing Slurry - The present invention discloses a polishing slurry, wherein said polishing slurry comprises a carrier and functionalized alumina grains. The polishing slurry, which comprises functionalized alumina grains having desirable dispersibility, has desirable stability and is able to lower the defect rate of the substrate surface, improve the surface quality, decrease the total metal loss and enlarge the variation range of the technical parameters.05-14-2009
20100044625METHOD FOR PREPARING CERIUM OXIDE POWDER USING ORGANIC SOLVENT AND CMP SLURRY COMPRISING THE SAME - Disclosed is a method for directly preparing cerium oxide powder in a solution phase by a) mixing a cerium precursor solution with a precipitant solution to cause a reaction; and b) performing oxidation treatment of the reacted solution, wherein at least one kind of pure organic solvent containing no water is used as a solvent for the cerium precursor solution as well as the precipitant solution to thereby prepare the cerium oxide powder, the particle size of which is adjusted to 50 nm to 3 μm. Cerium oxide powder obtained from the method and CMP slurry comprising the cerium oxide powder as a polishing agent are also disclosed. The method makes it possible to prepare cerium oxide powder with an average particle size of 50 nm or greater and high crystallinity, which is difficult to prepare by the conventional wet precipitation process, by using an organic solvent as a solvent in a wet precipitation process, and the so-prepared cerium oxide powder can be used as a polishing agent for CMP slurry even without being subjected to separate heat treatment.02-25-2010
20100044624ETCHANT WHICH CAN BE REMOVED WITHOUT RESIDUE - The invention relates to etchants for etching surfaces, in particular metal surfaces. The etchants are characterised in that they can be removed without residue from the respective etched surface.02-25-2010
20090127500POLISHING COMPOSITION - A polishing composition contains a triazole having a 6-membered ring skeleton, a water soluble polymer, an oxidant, and abrasive grains. The triazole has a hydrophobic functional group in the 6-membered ring skeleton. The content of the triazole in the polishing composition is 3 g/L or less. The pH of the polishing composition is 7 or more. The polishing composition is suitably used in polishing for forming wiring of a semiconductor device.05-21-2009
20110001082SEMICONDUCTOR MANUFACTURE COMPONENT - Disclosed herein are processes for making a consolidated or densified composite article comprising polymer, particularly fluoropolymer, and oriented carbon fiber, which provides suitability for use in chemical-mechanical applications.01-06-2011
20100133466Cerium carbonate powder, method for preparing the same, cerium oxide powder made therefrom, method for preparing the same, and CMP slurry comprising the same - Disclosed is a method for preparing cerium carbonate powder by mixing a cerium precursor solution with a carbonate precursor solution to cause precipitation, wherein at least one solvent used in the cerium precursor solution and the carbonate precursor solution is an organic solvent. Cerium carbonate powder obtained from the method, cerium oxide powder obtained from the cerium carbonate powder, a method for preparing the cerium oxide powder, and CMP slurry comprising the cerium oxide powder are also disclosed. The method for preparing cerium carbonate using an organic solvent, allows the resultant cerium carbonate powder to have a size and shape controllable from the initial nucleation step. Additionally, it is possible to easily control the size and shape of cerium oxide powder obtained from the cerium carbonate powder.06-03-2010
20090302266AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING, CHEMICAL MECHANICAL POLISHING METHOD, AND KIT FOR PREPARING AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING - A chemical mechanical polishing aqueous dispersion comprises (A) abrasive grains, (B) an organic acid, (C) a water-soluble polymer, (D) an oxidizing agent, and (E) water, the water-soluble polymer (C) having a weight average molecular weight of 50,000 to 5,000,000.12-10-2009
20120112123ETCHING COMPOSITION FOR AN UNDER-BUMP METALLURGY LAYER - In an etching composition for an under-bump metallurgy (UBM) layer and a method of forming a bump structure, the etching composition includes about 40% by weight to about 90% by weight of hydrogen peroxide (H05-10-2012
20120187333ADJUVANT FOR CONTROLLING POLISHING SELECTIVITY AND CHEMICAL MECHANICAL POLISHING SLURRY COMPRISING THE SAME - Disclosed is an adjuvant for use in simultaneous polishing of a cationically charged material and an anionically charged material, wherein the adjuvant comprises a polyelectrolyte salt containing: (a) a mixture of a linear polyelectrolyte having a weight average molecular weight of 2,000˜50,000 with a graft type polyelectrolyte that has a weight average molecular weight of 1,000˜20,000 and comprises a backbone and a side chain; and (b) a basic material. CMP (chemical mechanical polishing) slurry comprising the above adjuvant and abrasive particles is also disclosed. The adjuvant comprising a mixture of a linear polyelectrolyte with a graft type polyelectrolyte makes it possible to increase polishing selectivity as compared to CMP slurry using the linear polyelectrolyte alone, and to obtain a desired range of polishing selectivity by controlling the ratio of the linear polyelectrolyte to the graft type polyelectrolyte.07-26-2012
20090283715POLISHING SLURRY FOR CMP - The invention relates to a polishing slurry for CMP containing abrasive and a fang and seam restrainer, wherein the fang and seam restrainer is at least one selected from polycarboxylic acids, polycarboxylic acid derivatives, or carboxylic-acid-containing copolymers. According to this, provided is a polishing slurry for CMP which restrains a fang phenomenon or a seam phenomenon that an insulated film near wiring regions is excessively polished, thereby giving a high flatness to a polished face.11-19-2009
20090267020Adjuvant for Controlling Polishing Selectivity and Chemical Mechanical Polishing Slurry - Disclosed is an adjuvant for controlling polishing selectivity when polishing a cationically charged material simultaneously with an anionically charged material. CMP slurry comprising the adjuvant is also disclosed. The adjuvant comprises: (a) a polyelectrolyte that forms an adsorption layer on the cationically charged material in order to increase the polishing selectivity of the anionically charged material; (b) a basic material; and (c) a fluorine-based compound. when the adjuvant for controlling polishing selectivity of CMP slurry according to the present invention is applied to a CMP process, it is possible to increase the polishing selectivity of a silicon oxide layer, to obtain a uniform particle size of CMP slurry, to stabilize variations in viscosity under an external force and to minimize generation of microscratches during a polishing process. Therefore, the adjuvant for CMP slurry according to the present invention can improve reliability and productivity during the fabrication of very large scale integrated semiconductors.10-29-2009
20080203353DRY-ETCHING GAS FOR SEMICONDUCTOR PROCESS - The invention is a method for continuously preparing highly pure octafluorocyclopentene for use in dry-etching processes. The method includes reacting octachlorocyclopentene with KF in a continuous manner, and purifying crude octafluorocyclopentene. In the reacting step, two KF-charged filters are installed in parallel and allowed to communicate with a reactor containing octachlorocyclopentene in an alternating manner to produce crude octafluorocyclopentene. In the purifying step, organics having lower boiling points than octafluorocyclopentene are removed, and metal ingredients and organics having boiling points higher than octafluorocyclopentene are separated to recover octafluorocyclopentene as a gas. The gaseous octafluorocyclopentene composition contains C08-28-2008
20090236559COMPOSITIONS FOR POLISHING ALUMINUM/COPPER AND TITANIUM IN DAMASCENE STRUCTURES - The invention provides compositions and methods for planarizing or polishing a substrate. The composition comprises an abrasive consisting of alumina particles optionally treated with a polymer, an α-hydroxycarboxylic acid, an oxidizing agent that oxidizes at least one metal, polyacrylic acid, optionally, a calcium-containing compound, optionally, a biocide, optionally, a pH adjusting agent, and water. The method uses the composition to chemically-mechanically polish a substrate.09-24-2009
20130068995SILICA HAVING METAL IONS ABSORBED THEREON AND FABRICATING METHOD THEREOF - A silica having metal ions absorbed thereon and a fabricating method thereof are provided. The silica having metal ions absorbed thereon is a silica having metal ions absorbed thereon and being modified with persulfate salt. The method includes following steps. A solution is provided, and the solution includes silica and persulfate salt therein. The solution is heated to react the silica with the persulfate salt, so as to obtain silica modified with persulfate salt. Metal ion source is added in the solution, the metal ion source dissociates metal ions, and the silica modified with persulfate salt absorbs the metal ions to obtain the silica having metal ions absorbed thereon.03-21-2013
20130214199CMP SLURRY COMPOSITION FOR TUNGSTEN - The present invention relates to a CMP slurry composition for polishing tungsten comprising a abrasive and a polishing chemical, wherein the abrasive comprises colloidal silica dispersed in ultra-pure water, and the polishing chemical comprises hydrogen peroxide, ammonium persulfate and iron nitrate. The slurry composition is not discolored and has good etching selectivity, so as to be applied to a CMP process.08-22-2013
20090008600METHOD AND COMPOSITION FOR POLISHING A SUBSTRATE - Polishing compositions and methods for removing conductive materials and barrier materials from a substrate surface are provided. Polishing compositions are provided for removing at least a barrier material from a substrate surface by a chemical mechanical polishing process or by an electrochemical mechanical polishing process. The polishing compositions used in barrier removal may further be used after a process for electrochemical mechanical planarization process of a conductive material. The polishing compositions and methods described herein improve the effective removal rate of materials from the substrate surface with a reduction in planarization type defects.01-08-2009
20080315153POLISHING FLUIDS AND METHODS FOR CMP - Provided are several polishing compositions useful for modifying a surface, such as a semiconductor wafer suitable for fabrication of a semiconductor device, especially when used in fixed abrasive planarization techniques. The polishing compositions include a synergistic mixture of water, an oxidizing agent, a complexing agent, and metal ions. Also provided are various methods of surface planarization.12-25-2008
20120235081PROCESS FOR REMOVING A BULK MATERIAL LAYER FROM A SUBSTRATE AND A CHEMICAL MECHANICAL POLISHING AGENT SUITABLE FOR THIS PROCESS - A process for removing a bulk material layer from a substrate and planarizing the exposed surface by CMP by (1) providing an CMP agent exhibiting at the end of the chemical mechanical polishing, without the addition of supplementary materials, the same SER as at its start and a lower MRR than at its start,—an SER which is lower than the initial SER and an MRR which is the same or essentially the same as the initial MRR or a lower SER and a lower MRR than at its start; (2) contacting the surface of the bulk material layer with the CMP agent; (3) the CMP of the bulk material layer with the CMP agent; and (4) continuing the CMP until all material residuals are removed from the exposed surface; and a CMP agent and their use for manufacturing electrical and optical devices.09-20-2012
20080290317PYROGENICALLY PREPARED SILICON DIOXIDE WITH A LOW THICKENING EFFECT - Provided is a pyrogenically prepared SiO11-27-2008
20090256108CONDITIONING AGENT FOR ETCHING ENAMEL LESIONS - The invention relates to a composition which comprises 10-15-2009
20100148113METHOD FOR PREPARING CERIUM CARBONATE POWDER - In a method for preparing cerium carbonate powder by mixing a cerium precursor solution with a urea solution and carrying out a precipitation reaction, wherein the cerium carbonate powder has a hexagonal crystal structure, by using at least one type of organic solvent as a solvent for either or both the cerium precursor solution and the urea solution, and adjusting temperature of the precipitation reaction within a range of 120° C. to 300° C. Also, the method can yield cerium carbonate powder, cerium oxide powder from the cerium carbonate powder, and CMP slurry including the cerium oxide powder as an abrasive. In the method, urea as a precipitant can improve the uniformity of a reaction, and thus it is possible to easily and inexpensively obtain cerium carbonate powder with a hexagonal crystal structure without the danger by high-temperature high-pressure and the need for an expensive system in hydrothermal synthesis.06-17-2010
20100171069DISPERSION COMPRISING CERIUM OXIDE, SILICON DIOXIDE AND AMINO ACID - A dispersion comprising particles of cerium oxide and sheet silicate and one or more aminocarboxylic acids and/or salts thereof, where the zeta potential of sheet silicate particles is negative and that of the cerium oxide particles is positive or equal to zero, and the zeta potential of the dispersion is negative overall, the mean diameter of the•cerium oxide particles is not more than 200 nm•sheet silicate particles is less than 100 nm, the content, based in each case on the total amount of the dispersion, of•cerium oxide particles is from 0.1 to 5% by weight•sheet silicate particles is from 0.01 to 10% by weight and•aminocarboxylic acid or salt thereof is from 0.01 to 5% by weight and the pH of the dispersion is from 7.5 to 10.5.07-08-2010
20090090888COMPOSITION AND METHOD USEFUL TO CHEMICAL MECHANICAL PLANARIZATION OF METAL - A chemical mechanical polishing composition, the polishing composition includes polishing abrasive, an oxidizing agent, an accelerating compound, an inhibitor, a co-inhibitor, and a solvent as the remaining. The composition can maintain a high removal rate through polishing, meantime it has a feature to inhibit static etch rate and lower the defect of polishing including metal dishing and erosion. Hence it needs no change of the composition for simultaneously removing a most part of a metal layer, particularly for a first stage of polishing bulk copper layer and for a second micro-polishing stage of removing the remaining less copper; the present invention has the advantage of simplifying processing and reducing waste.04-09-2009
20100090157ADHESIVE COMPOSITION FOR HARD TISSUE - An adhesive composition including an etchant for a hard tissue surface, at least one multifunctional crosslinkable (meth)acrylate monomer with a functionality greater than 4, and water. The adhesive composition is a water-in-oil emulsion.04-15-2010
20100117024LAPPING COMPOSITION AND METHOD USING SAME - A lapping composition is presented, wherein that lapping composition is formed by mixing a solvent, a base, and a phenolic compound having structure I:05-13-2010
20090267021Colloidal silica for semiconductor wafer polishing and production method thereof - Colloidal silica forming nonspherical particles cluster, whose long axis/short axis ratio of silica particles is of 1.2 to 20, and average long axis/short axis ratio of 3 to 15. This colloidal silica can be produced by forming particles by adding basic nitrogen compounds to an active silicic acid aqueous solution, the solution which produced by hydrolysis of tetraalkoxysilane, while heating, then growing particles by using a build up method.10-29-2009
20110062374CMP slurry for metallic film, polishing method and method of manufacturing semiconductor device - A CMP slurry for metallic film is provided, which includes water, 0.01 to 0.3 wt %, based on a total quantity of the slurry, of polyvinylpyrrolidone having a weight average molecular weight of not less than 20,000, an oxidizing agent, a protective film-forming agent containing a first complexing agent for forming a water-insoluble complex and a second complexing agent for forming a water-soluble complex, and colloidal silica having a primary particle diameter ranging from 5 to 50 nm.03-17-2011
20090278080Polishing Slurry - An object of one embodiment of the present invention is to provide a polishing slurry which can reduce dishing and erosion of a to-be-polished semiconductor wafer. The polishing slurry contains an oxidizing agent and two or more kinds of abrasive grains for polishing, i.e., fumed silica and colloidal silica. A ratio (selectivity ratio) between a polishing rate of a metal film such as a tungsten film and a polishing rate of an insulating film (oxide film) such as a SiO11-12-2009
20090101864Chemical Mechanical Polishing Paste for Tantalum Barrier Layer - A chemical mechanical polishing slurry for Ta barrier layer is disclosed, which comprises abrasive particles A, abrasive particles B larger in size than abrasive particles A, a triazole compound, an organic acid and a carrier. By using the chemical mechanical polishing slurry according to the present invention, the defects, scratches, contaminants and other residues can be reduced significantly, and the polishing selectivity between the barrier layer and the oxide layer can be adjusted by using particles of different sizes, so that the difficulty of adjusting the removing rates of two substrates separately is overcome. Furthermore, both the local corrosion and the general corrosion during the metal polishing process are avoided, and thus the yield rate of the desired products is promoted.04-23-2009
20090272937ALUMINIUM OXIDE POWDER, DISPERSION AND COATING COMPOSITION - Aluminium oxide powder in the form of aggregates of primary- particles, which has a BET surface area of from 10 to 90 m2/g and comprises as crystalline phases, in addition to gamma- aluminium oxide and/or theta-aluminium oxide, at least 30% of delta-aluminium oxide. It is prepared by vaporizing aluminium chloride and burning the vapour together with hydrogen and air, the ratio of primary air/secondary air being 0.01 to 2, the exit speed v11-05-2009
20090278081PAD PROPERTIES USING NANOPARTICLE ADDITIVES - A method for forming a polishing media and an article of manufacture is described. The article of manufacture may be formed into a polishing article. The polishing article includes a polymer base material and a plurality of nano-scale structures disposed in or on the polymer base material.11-12-2009
20110204283FUMED SILICA OF CONTROLLED AGGREGATE SIZE AND PROCESSES FOR MANUFACTURING THE SAME - The invention provides fumed silica comprising aggregates that have an aggregate size and a surface area that satisfy particular formulas relating aggregate size to surface area, as well as aggregates that exhibit particular viscosity, power law exponent index, and/or elastic modulus characteristics when dispersed in liquid media. The invention also provides processes of preparing such fumed silica by combining a silica precursor with a stream of combustible gas, combusting the stream, and producing a stream of combusted gas and fumed silica particles, wherein dopants are introduced, the time/temperature profile, or history, of the stream of combusted gas and fumed silica particles is adjusted to allow for post-quench aggregate growth, and/or additional silica precursor is introduced into the stream of combusted gas.08-25-2011
20090261291Chemical-Mechanical Planarization Composition Having Benzenesulfonic Acid and Per-Compound Oxidizing Agents, and Associated Method for Use - A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains an abrasive, benzenesulfonic acid compound, a per-compound oxidizing agent, and water. The composition affords tunability of removal rates for metal, barrier layer materials, and dielectric layer materials in metal CMP processes. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., step 2 copper CMP processes).10-22-2009
20120292559Methods and Compositions for Acid Treatment of a Metal Surface - The invention relates to compositions and methods that are useful in etching a metal surface. In particular, the invention relates to novel acid compositions and methods of using such compositions in etching a metal surface, preferably an aluminum surface prior to anodizing to dissolve impurities, imperfections, scale, and oxide. The compositions are effective in maintaining their etching capacity and in removing smut produced by the etching of a surface as well as in general cleaning.11-22-2012
20100102268DISPERSION COMPRISING CERIUM OXIDE AND COLLOIDAL SILICON DIOXIDE - A dispersion comprising cerium oxide particles and colloidal silicon dioxide particles, where—the zeta potential of the silicon dioxide particles is negative and that of the cerium oxide particles is positive or equal to zero, and the zeta potential of the dispersion is negative overall, and—the mean particle diameter of the cerium oxide particles is not more than 200 nm and that of the silicon dioxide particles is not more than 100 nm, the mean particle diameter of the cerium oxide particles being greater than that of the silicon dioxide particles—the cerium oxide/silicon dioxide weight ratio is from 1.1:1 to 100:1 and—the pH of the dispersion is from 7.5 to 10.5.04-29-2010
20120261608ETCHANT AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SAME - Disclosed are an etchant which is used for redistribution of a semiconductor substrate having an electrode and which is capable of selectively etching copper without etching nickel; and a method for manufacturing a semiconductor device using the same. Specifically disclosed are an etchant which is used for redistribution of a semiconductor substrate and which contains hydrogen peroxide and citric acid and has a content of hydrogen peroxide of from 0.75 to 12% by mass and a content of citric acid of from 1 to 20% by mass, with a molar ratio of hydrogen peroxide and citric acid being in the range of from 0.3 to 5; an etchant for selective etching of copper which is used for redistribution of a semiconductor substrate and which contains hydrogen peroxide and malic acid and has a content of hydrogen peroxide of from 0.75 to 12% by mass and a content of malic acid of from 1.5 to 25% by mass, with a molar ratio of hydrogen peroxide and malic acid being in the range of from 0.2 to 6; and a method for manufacturing a semiconductor device using such an etchant.10-18-2012
20080203354POLISHING LIQUID - The invention provides a polishing liquid for polishing a barrier layer of a semiconductor integrated circuit, the polishing liquid comprising: a diquaternary ammonium cation; a corrosion inhibiting agent; and a colloidal silica, wherein the pH of the polishing liquid is in the range of 2.5 to 5.0. According to the invention, a polishing liquid capable of achieving a superior barrier layer polishing rate, as well as suppressing the occurrence of scratching due to the agglomeration of solid abrasive grains can be provided.08-28-2008
20130119305METHOD AND COMPOSITIONS FOR PRODUCING OPTICALLY CLEAR PHOTOCATALYTIC COATINGS - The invention relates to a method and compositions for producing a hydrophilic coating on a surface of a solid material. The method comprises a cleaning step and a coating step. The cleaning step may be preceded by an initial cleaning step and it may optionally be succeded by a preconditioning step prior to the coating step. The cleaning step comprises cleaning and preconditioning a surface of a material by use of a first cleaning fluid composition comprising ceria (CeO05-16-2013
20080265205Polishing Composition - A polishing composition contains a protective film forming agent, an oxidant, and an etching agent. The protective film forming agent includes at least one type of compound selected from benzotriazole and a benzotriazole derivative and at least one type of compound selected from the compounds represented by the general formula ROR′COOH and a general formula ROR′OPO10-30-2008
20110006251CERIUM SALT, PRODUCING METHOD THEREOF, CERIUM OXIDE AND CERIUM BASED POLISHING SLURRY - A cerium salt wherein, when 20 g of the cerium salt is dissolved in a mixed liquid of 12.5 g of 6N nitric acid and 12.5 g of a 30% hydrogen peroxide aqueous solution, a concentration of an insoluble component present in the solution is 5 ppm or less by mass ratio to the cerium salt before dissolution and cerium oxide produced by processing the cerium salt at high temperatures. Scratch on a surface to be polished can be reduced when a cerium based polishing slurry containing the cerium oxide particles is used, since an amount of impurities in cerium oxide particles and cerium salt particles, raw material thereof, is reduced for high purification.01-13-2011
20100270495LIQUID RESIN COMPOSITION FOR ABRASIVE ARTICLES - The invention relates to a thermally curable liquid resin composition intended for manufacturing abrasives that comprises at least one epoxy resin comprising at least two epoxy groups and at least one reactive diluent, said composition having a viscosity, at 25° C., less than or equal to 7000 mPa.s.10-28-2010
20090179172POLISHING COMPOSITION - To provide a polishing composition which can satisfy both suppression of the surface topography and a high stock removal rate, in a polishing step in the production of a wiring structure.07-16-2009
20090140199POLISHING COMPOUND AND POLISHING METHOD - To provide a polishing compound which can satisfy both high removal rate of an object to be polished and excellent property to eliminate the difference in level, and to provide a polishing method which can polish a wiring metal fast while suppressing increase of a wiring metal resistance and is excellent in the property to eliminate the difference in level.06-04-2009
20100200802OXIDATION-STABILIZED CMP COMPOSITIONS AND METHODS - The present invention provides a chemical-mechanical polishing (CMP) composition comprising an amino compound, a radical-forming oxidizing agent, a radical trapping agent capable of inhibiting radical-induced oxidation of the amino compound, and an aqueous carrier therefore. The radical trapping agent is a hydroxyl-substituted polyunsaturated cyclic compound, a nitrogenous compound, or a combination thereof. Optionally, the composition comprises a metal oxide abrasive (e.g., silica, alumina, titania, ceria, zirconia, or a combination of two or more of the foregoing abrasives).08-12-2010
20090250656Free Radical-Forming Activator Attached to Solid and Used to Enhance CMP Formulations - A chemical mechanical polishing composition having: a fluid comprising water and at least one oxidizing compound that produces free radicals when contacted with an activator; and a plurality of particles having a surface and comprising at least one activator selected from ions or compounds of Cu, Fe, Mn, Ti, or mixtures thereof disposed on said surface, wherein at least a portion of said surface comprises a stabilizer. Preferred activators are selected from inorganic oxygen-containing compounds of B, W, Al, and P, for example borate, tungstate, aluminate, and phosphate. The activators are preferably ions of Cu or Fe. Advantageously, certain organic acids, and especially dihydroxy enolic acids, are included in an amount less than about 4000 ppm. Advantageously, activator is coated onto abrasive particles after the particles have been coated with stabilizer.10-08-2009
20100264360Use of oxidants for the processing of semiconductor wafers, use of a composition and composition therefore - The present invention relates to the use of at least one oxidant, selected from peracids, in compositions for the processing of semiconductor wafers, in particular for the cleaning and chemical mechanical polishing of semiconductor wafers. The present invention also relates to the use of a composition and composition therefore. The use of the oxidants of the invention leads to a good efficacy while limiting/avoiding the corrosion of the substrate.10-21-2010
20090072190CLEANING SOLUTION FORMULATIONS FOR SUBSTRATES - A semiconductor system includes: providing a dielectric layer; providing a conductor in the dielectric layer, the conductor exposed at the top of the dielectric layer; capping the exposed conductor; and modifying the surface of the dielectric layer, modifying the surface of the dielectric layer, wherein modifying the surface includes cleaning conductor ions from the dielectric layer by dissolving the conductor in a low pH solution, dissolving the dielectric layer under the conductor ions, mechanically enhanced cleaning, or chemisorbing a hydrophobic layer on the dielectric layer.03-19-2009
20100176335CMP Slurry Composition for Copper Damascene Process - The present invention relates to a CMP slurry composition for copper damascene process of semiconductor manufacturing process. The barrier CMP slurry composition for copper damascene process of the present invention does not include an oxidant, so that it exhibits excellent reproducibility of polishing performance, low etching speed, and adequate polishing speed for copper layer, silicon oxide film and Ta-based film. Thus, the slurry composition of the invention has such advantages as easy dishing or erosion removal, excellent dispersion stability, and low scratch level, making it excellent barrier CMP slurry composition for copper damascene process.07-15-2010
20100193728Chemical Mechanical Polishing Composition - An inhibitor composition according to the present invention at least comprises an imidazoline compound or a triazole compound or combinations thereof, and sarcosine and salt compounds thereof or combinations thereof. The inhibitor composition is applicable to chemical mechanical polishing so as to maintain a high removal rate of metal layers as well as suppress metal etching, thereby reducing polishing defects such as dishing, erosion and the like.08-05-2010
20100155654Polishing Composition - Disclosed is a polishing composition containing not less than 1 wt % of a water-soluble resin, which is obtained by polymerizing a vinyl monomer containing an amino group and/or an amide group, based on the total weight of the polishing composition.06-24-2010
20120138850ETCHANT GAS - An etchant gas and a method for removing at least a portion of a late transition metal structure. The etchant gas includes PF06-07-2012
20100252774CHEMICAL MECHANICAL POLISHING AQUEOUS DISPERSION, METHOD OF PREPARING THE SAME, CHEMICAL MECHANICAL POLISHING AQUEOUS DISPERSION PREPARATION KIT, AND CHEMICAL MECHANICAL POLISHING METHOD - A chemical mechanical polishing aqueous dispersion that is used to polish a polishing target that includes a wiring layer that contains tungsten, the chemical mechanical polishing aqueous dispersion including: (A) a cationic water-soluble polymer; (B) an iron (III) compound; and (C) colloidal silica having an average particle diameter calculated from a specific surface area determined by the BET method of 10 to 60 nm, the content (M10-07-2010
20100001229CMP SLURRY FOR SILICON FILM - The present invention provides a CMP slurry for silicon film, and by using such the slurry, polishing rates and polishing rate ratios of a silicon film, a silicon nitride film and a silicon oxide film required for performing CMP are obtained. In the CMP, a single slurry is used for forming a contact plug in self-alignment manner to decrease costs for producing semiconductor elements and improve yield. The slurry comprises abrasive grains, a cationic surfactant and water and has a pH value of 6.0 to 8.0.01-07-2010
20090283714ETCHING GAS FOR REMOVING ORGANIC LAYERS - An etching gas for removing organic layer is disclosed. The etching gas of the present invention preferably includes two compositions. The first composition of the etching gas includes hydrocarbon, halogen or halogen compound, oxygen gas, hydrogen gas, nitrogen has, and inert gas, in which the hydrocarbon comprises an alkene. The second composition of the etching gas includes hydrocarbon, halogen or halogen compound, oxygen gas, hydrogen gas, nitrogen gas, and inert gas, in which the hydrocarbon comprises an alkyne. The etching gas of the present invention may also include hydrofluorocarbon compounds, hydrogen chloride, and hydrogen bromide to improve the performance of the etching process.11-19-2009
20120193573ADDITIVE FOR POLISHING COMPOSITION - The invention relates to an additive for polishing composition, which can ensure stable polishing properties. The additive for polishing composition contains one or more amine compounds and an alcohol. The one or more amine compounds contain a quaternary ammonium salt. When the one or more amine compounds are contained in high concentration, the occurrence of precipitation of the amine compound can be prevented by including the alcohol.08-02-2012
20090039311DIFLUORIDE COMPOSITION, METHOD OF PREPARATION, AND USE FOR FROSTING GLASS - A composition with no water consisting essentially of at least one fluoride-ion-generating agent and at least one viscosity modifier, characterized in that its viscosity, measured at 25° C. using a Brookfield™ LVT viscometer fitted with a No. 1 spindle rotating at a speed of 30 revolutions per minute, is between 50 and 5000 mPa·s Method for preparing the composition, dry composition and method of frosting flat glass.02-12-2009
20100301263Slurry composition for a chemical mechanical polishing process and method of manufacturing a semiconductor device using the slurry composition - A slurry composition for a chemical mechanical polishing process and a method of manufacturing a semiconductor memory device using the slurry composition are provided. The slurry composition may include about 0.001 percent by weight to about 5 percent by weight of a ceria abrasive, about 0.001 percent by weight to about 0.1 percent by weight of a nonionic surfactant adsorbed onto a polysilicon layer forming a passivation layer on the polysilicon layer, the nonionic surfactant having a chemical structure of a triblock copolymer including a first polyethylene oxide block, a polypropylene oxide block and a second polyethylene oxide block and a remainder of water.12-02-2010
20100301264PYROGENIC OXIDES DOPED WITH POTASSIUM - A method for producing potassium-doped pyrogenic oxides involves mixing a gaseous mixture including a pyrogenic oxide precursor and an aqueous aerosol containing a potassium salt to form an aerosol-gaseous mixture which is then reacted in a flame under conditions suitable for producing pyrogenic oxides by flame oxidation or flame hydrolysis to form the potassium-doped pyrogenic oxides product. The particle product is spherical, has a BET surface between 1 and 1000 m12-02-2010
20100301262Composition and process for controlling particle size of metal oxides - Composition and processes to prepare a polishing medium to be used in chemical and mechanical polishing applications.12-02-2010
20100308258DISPERSION COMPRISING CERIUM OXIDE AND SHEET SILICATE - A dispersion comprising particles of cerium oxide and sheet silicate, where—the zeta potential of the sheet silicate particles is negative and that of the cerium oxide particles is positive or equal to zero, and the zeta potential of the dispersion is negative overall, —the mean diameter of the cerium oxide particles is not more than 200 nm sheet silicate particles is less than 100 nm, —the proportion, based in each case on the total amount of the dispersion, of cerium oxide particles is from 0.1 to 5% by weight sheet silicate particles is from 0.01 to 10% by weight and—the pH of the dispersion is from 3.5 to <7.5.12-09-2010
20110114872Process For Polishing A Silicon Surface By Means Of A Cerium Oxide-Containing Dispersion - Process for polishing silicon surfaces, in which a dispersion which comprises cerium oxide particles, at least one polymeric, anionic dispersing additive and at least one oxidizing agent and which has a pH of 7 to 10.5 is used, said cerium oxide particles having a positive charge and polymeric, anionic dispersing additive and oxidizing agent being soluble in the liquid phase of the dispersion.05-19-2011
20090032765Selective barrier polishing slurry - The aqueous slurry is useful for chemical mechanical polishing a semiconductor substrate having copper interconnects. The slurry contains by weight percent, 0 to 25 oxidizing agent, 0.1 to 30 abrasive particles, 0.001 to 5 benzenecarboxylic acid, 0.00002 to 5 multi-component surfactant, the multi-component surfactant having a hydrophobic tail, a nonionic hydrophilic portion and an anionic hydrophilic portion, the hydrophobic tail having 6 to 30 carbon atoms and the nonionic hydrophilic portion having 10 to 300 carbon atoms, 0.001 to 10 inhibitor for decreasing static etch of the copper interconnects, 0 to 5 phosphorus-containing compound for increasing removal rate of the copper interconnects, 0 to 10 complexing agent formed during polishing and balance water.02-05-2009
20100163786Polishing composition for semiconductor wafer - A polishing composition for semiconductor wafer polishing comprising, colloidal silica prepared from an active silicic acid aqueous solution obtained by removal of alkali from alkali silicate and at least one nitrogen containing basic compound selected from a group consisting of ethylenediamine, diethylenediamine, imidazole, methylimidazole, piperidine, morpholine, arginine, and hydrazine, wherein pH of the colloidal silica is of 8.5 to 11.0 at 25° C. by containing quaternary ammonium hydroxide.07-01-2010
20100163785DISPERSION COMPRISING CERIUM OXIDE, SILICON DIOXIDE AND AMINO ACID - A dispersion comprising particles of cerium oxide and colloidal silicon dioxide and in each case one or more aminocarboxylic acids and/or salts thereof, where the zeta potential of the silicon dioxide particles is negative and that of the cerium oxide particles is positive or equal to zero, and the zeta potential of the dispersion is negative overall, the mean diameter of the • cerium oxide particles is not more than 200 nm silicon dioxide particles is less than 100 nm, the content, based in each case on the total amount of the dispersion, of • cerium oxide particles is from 0.1 to 5% by weight silicon dioxide particles is from 0.01 to 10% by weight and • aminocarboxylic acid or salt thereof is from 0.01 to 5% by weight and —the pH of the dispersion is from 7.5 to 10.5.07-01-2010
20100163784Polishing Composition for Planarizing Metal Layer - A polishing composition of the present invention at least comprises about 750 ppm to less than 5000 ppm by weight of abrasive particles, hydrogen peroxide, an accelerator, a dual-corrosion inhibitor and water, wherein the dual-corrosion inhibitor contains a first and a second corrosion inhibitor. The dual-corrosion inhibitor is applied to the planarization of metal layers so as to maintain a high removal rate of metal layers as well as suppress etching of the metal, thus capable of reducing polishing defects such as dishing, erosion and the like.07-01-2010
20100038584Polishing Composition and Polishing Method Using the Same - A polishing composition for electrochemical mechanical polishing a surface of an object in which the polishing composition contains a phosphate electrolyte such as a potassium phosphate, a chelating agent such as a potassium citrate, a corrosion inhibitor such as benzotriazole, an oxidizing agent such as hydrogen peroxide, and a solvent such as water. The polishing composition preferably further contains abrasive particles such as colloidal silica particles.02-18-2010
20100072417LIQUID SUSPENSIONS AND POWDERS OF CERIUM OXIDE PARTICLES AND POLISHING APPLICATIONS THEREOF - Suspensions of cerium oxide particles in which the particles (secondary particles) have an average size not exceeding 200 nm, such secondary particles being comprised of primary particles having an average size not exceeding 100 nm with a standard deviation having a value not exceeding 30% of the value of this average size, are prepared from a solution of a cerium-III salt, including cerium IV or hydrogen peroxide, which is contacted with a base in the presence of nitrate ions and in an inert atmosphere; the medium thus obtained is subjected to a thermal processing in an inert atmosphere, then acidified and scrubbed and the powder is obtained by drying and calcining of the suspension, which suspension and powder are useful for polishing applications.03-25-2010
20110175018POLISHING LIQUID AND POLISHING METHOD - The present invention relates to a polishing slurry including: a colloidal silica having an average particle size of 40 nm or more; water; and a ζ potential adjusting component, in which (1) the ζ potential adjusting component includes at least one sodium salt selected from the group consisting of sodium nitrate and sodium sulfate, and the polishing slurry has a pH of 8 or more, or (2) the ζ potential adjusting component includes at least one water-soluble organic polymer selected from the group consisting of a water-soluble polyether polyamine and a water-soluble polyalkylene polyamine and at least one acid selected from the group consisting of hydrochloric acid, sulfuric acid, nitric acid, nitrous acid and amidosulfuric acid, and the ζ potential adjusting component contains the acid at a ratio of from 0.6 to 1.4 to the water-soluble organic polymer in terms of molar ratio, and the polishing slurry has a pH of 8 or more.07-21-2011
20110073800Abrasive-free chemical mechanical polishing compositions - The aqueous abrasive-free composition is useful for chemical mechanical polishing of a patterned semiconductor wafer containing a nonferrous metal. The composition includes an oxidizer, an inhibitor for the nonferrous metal, 0 to 15 weight percent water soluble modified cellulose, 0 to 15 weight percent phosphorus compound, 0.005 to 5 weight percent of an acidic polymer, and water. The acidic polymer has a methacrylic acid portion having a carbon number of 4 to 250. The methacrylic acid portion includes either methacrylic acid or an acrylic acid/methacrylic acid copolymer. The acidic polymer including a segment from a mercapto-carboxylic acid chain transfer agent.03-31-2011
20090001314Compositions for Dissolution of Low-K Dielectric Films, and Methods of Use - An improved composition and method for cleaning the surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both layers from the surface of a wafer. The composition is formulated according to the invention to provide a desired removal rate of the low-k dielectric and/or photoresist from the surface of the wafer. By varying the fluorine ion component, and the amounts of the fluorine ion component and acid, component, and controlling the pH, a composition can be formulated in order to achieve a desired low-k dielectric removal rate that ranges from slow and controlled at about 50 to about 1000 angstroms per minute, to a relatively rapid removal of low-k dielectric material at greater than about 1000 angstroms per minute. The composition can also be formulated to selectively remove a photoresist layer, leaving the underlying low-k dielectric layer essentially intact.01-01-2009
20080315154POLISHING FLUIDS AND METHODS FOR CMP - Provided are several polishing compositions useful for modifying a surface, such as a semiconductor wafer suitable for fabrication of a semiconductor device, especially when used in fixed abrasive planarization techniques. The polishing compositions include a synergistic mixture of water, an oxidizing agent, a complexing agent, and metal ions. Also provided are various methods of surface planarization.12-25-2008
20080230741POLISHING INHIBITING LAYER FORMING ADDITIVE - A polishing inhibiting layer forming additive for a slurry, the slurry so formed, and a method of chemical mechanical polishing are disclosed. The polishing inhibiting layer is formed through application of the slurry to the surface being polished and is removable at a critical polishing pressure. The polishing inhibiting layer allows recessed or low pattern density locations to be protected until a critical polishing pressure is exceeded based on geometric and planarity considerations, rather than slurry or polishing pad considerations. With the additive, polishing rate is non-linear relative to polishing pressure in a recessed/less pattern dense location. In one embodiment, the additive has a chemical structure: [CH09-25-2008
20110163262COLLOIDAL SILICA CONTAINING SILICA SECONDARY PARTICLES HAVING BENT STRUCTURE AND/OR BRANCHED STRUCTURE, AND METHOD FOR PRODUCING SAME - This invention provides a dense, high-purity colloidal silica containing silica secondary particles having a branched and/or bent structure, and a production method thereof. Specifically, this invention provides a method for producing a colloidal silica, comprising the steps of 1) preparing a mother liquid containing an alkali catalyst and water, and having a pH of 9 to 12; and 2) adding a hydrolysis liquid obtained by hydrolysis of an alkyl silicate to the mother liquid, wherein the step of adding the hydrolysis liquid to the mother liquid sequentially comprises A) step 1 of adding the hydrolysis liquid until the pH of the resulting liquid mixture becomes less than 7; B) step 2 of adding an aqueous alkali solution until the pH of the liquid mixture becomes 7 or more; and C) step 3 of adding the hydrolysis liquid while maintaining the pH of the liquid mixture at 7 or more, and a colloidal silica containing silica secondary particles having a branched and/or bent structure, obtained by this method.07-07-2011
20110121224POLISHING COMPOSITION - A polishing composition that allows polishing speed to be increased and surface roughness to be reduced is provided. The polishing composition according to the present invention includes a compound including at least an oxyethylene group or an oxypropylene group in a block polyether represented by the following general formula (1), a basic compound, and abrasives: >N—R—N< (1) where R represents an alkylene group expressed as C05-26-2011
20100294983POLISHING COMPOSITION - A polishing composition that can improve polishing property without foaming is provided. A polishing composition includes a pH regulator, a water-soluble polymer compound, and a compound containing an alkylene diamine structure having two nitrogens represented by the following general formula (1), and having at least one block type polyether bonded to the two nitrogens of the alkylene structure, the block type polyether having a bond of an oxyethylene group and an oxypropylene group:11-25-2010
20100181525Compositions comprising silane modified metal oxides - The present invention relates to a composition comprising a silane modified metal oxide, wherein the silane modified metal oxide comprises a metal oxide having attached at least one silyl group, and wherein the silyl group comprises at least one —SO07-22-2010
20120145950ULTRAPURE COLLOIDAL SILICA FOR USE IN CHEMICAL MECHANICAL POLISHING APPLICATIONS - An ultrapure colloidal silica dispersion comprising colloidal silica particles having a mean or aggregate particle size from about 10 to about 200 nm, wherein the colloidal silica dispersion has less than 200 ppb, of each trace metal impurity disposed therein, excluding potassium and sodium, and have less than 2 ppm residual alcohol. A method for producing and using the same is also disclosed.06-14-2012
20120145949Method for producing electronic grade aqueous ammonium fluoride solution - The present invention relates to a method for producing of electronic grade aqueous ammonium fluoride solution. The industrial grade liquid ammonia is used as the raw material, when it is heated, the ammonia gas will be released. The organic gas impurities in the ammonia gas are removed by activated charcoal, and the oxygen is removed by deoxidizer, and then the high-purity ammonia gas is gotten. The high-purity hydrofluoric acid absorbs and reacts with the high-purity ammonia gas to obtain the electronic grade aqueous ammonium fluoride solution. The product has high-purity and stable quality, and it can be used in producing of electronic products directly. The method for producing of electronic grade ammonium aqueous fluoride solution provided by the present invention is suitable for continuous production on a large scale because of its simple operation.06-14-2012
20100187470FINE CERIUM OXIDE POWDER AND PREPARING METHOD THE SAME AND CMP SLURRY COMPRISING THE SAME - Disclosed is a method of preparing cerium oxide (CeO07-29-2010
20100059704FUMED SILICA OF CONTROLLED AGGREGATE SIZE AND PROCESSES FOR MANUFACTURING THE SAME - The invention provides fumed silica comprising aggregates that have an aggregate size and a surface area that satisfy particular formulas relating aggregate size to surface area, as well as aggregates that exhibit particular viscosity, power law exponent index, and/or elastic modulus characteristics when dispersed in liquid media. The invention also provides processes of preparing such fumed silica by combining a silica precursor with a stream of combustible gas, combusting the stream, and producing a stream of combusted gas and fumed silica particles, wherein dopants are introduced, the time/temperature profile, or history, of the stream of combusted gas and fumed silica particles is adjusted to allow for post-quench aggregate growth, and/or additional silica precursor is introduced into the stream of combusted gas.03-11-2010
20100059705METHOD AND APPARATUS FOR REMOVING MATERIAL FROM MICROFEATURE WORKPIECES - Methods and apparatus for removing materials from microfeature workpieces. One embodiment of a subpad in accordance with the invention comprises a matrix having a first surface configured to support a polishing medium and a second surface opposite the first surface. The subpad in this embodiment further includes a hydro-control agent in the matrix. The hydro-control agent has a hydrophobicity that inhibits liquid from absorbing into the subpad. The hydro-control agent, for example, can be coupling agents that are generally hydrophobic, surfactants that are hydrophobic, or other agents that are compatible with the matrix and at least generally hydrophobic.03-11-2010
20100025623ADDITIVE FOR POLISHING COMPOSITION - One embodiment of the present invention discloses an additive for polishing composition, which can ensure stable polishing properties. The additive for polishing composition contains one or more amine compounds and an alcohol. The one or more amine compounds contain a quaternary ammonium salt. In one embodiment, when the one or more amine compounds are contained in high concentration, the occurrence of precipitation of the amine compound can be prevented by including the alcohol.02-04-2010
20090184287SARCOSINE COMPOUND USED AS CORROSION INHIBITOR - The sarcosine compounds used as a corrosion inhibitor according to the present invention include sarcosine and salt compounds thereof. The corrosion inhibitor is used in chemical mechanical polishing compositions or post CMP clean agents, which forms a protective film on the surface of a work piece to prevent the work piece from corrosion in chemical mechanical polishing, and thus common residue defect on the surface of a work piece due to the use of a conventional corrosion inhibitor (e.g. benzotriazole (BTA)) can be improved or the surface of a work piece can be protected from corrosion in post-CMP cleaning.07-23-2009
20090173910POLISHING COMPOSITION - To provide a polishing composition which can satisfy both suppression of the surface topography and a high stock removal rate, in a polishing step in the production of a wiring structure.07-09-2009
20090078908POLISHING LIQUID - A polishing liquid for polishing a barrier layer of a semiconductor integrated circuit, which liquid includes: a quaternary ammonium cation; a corrosion inhibiting agent; a polymer compound having a sulfo group at a terminal; inorganic particles; and an organic acid, the pH of the polishing liquid being in the range of 1 to 7.03-26-2009
20120001118Polishing slurry for chalcogenide alloy - The invention provides a chemical mechanical polishing composition for chemical mechanical polishing of a chalcogenide phase change alloy substrate. The composition comprises by weight percent, water, 0.1 to 30 colloidal silica abrasive, at least one polishing agent selected from 0.05 to 5 halogen compound, 0.05 to 5 phthalic acid, 0.05 to 5 phthalic anhydride and salts, derivatives and mixtures thereof. The chemical mechanical polishing composition has a pH of 2 to less than 7.01-05-2012
20120205578Polishing Composition and Method Using Same - A polishing composition, comprising a compound having structure I or salts thereof:08-16-2012
20120007018SLURRY COMPOSITIONS FOR SELECTIVELY POLISHING SILICON NITRIDE RELATIVE TO SILICON OXIDE, METHODS OF POLISHING A SILICON NITRIDE LAYER AND METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME - Slurry compositions for selectively polishing silicon nitride relative to silicon oxide, methods of polishing a silicon nitride layer and methods of manufacturing a semiconductor device using the same are provided. The slurry compositions include a first agent for reducing an oxide polishing rate, an abrasive particle and water. The first agent includes poly(acrylic acid), The slurry composition may have a high polishing selectivity of silicon nitride relative to silicon oxide to be employed in selectively polishing a silicon nitride layer in a semiconductor manufacturing process.01-12-2012
20090090889Method and agent for chemical conversion treatment and chemically conversion-Treated members - A method is provided for chemical conversion treatment by which a chemical conversion layer attaining satisfactory substrate-covering properties, adhesion to coating and corrosion resistance can be formed on any metal structure surface. More specifically, a method for chemical conversion treatment is provided by treating a metal structure with an agent for chemical conversion treatment, in which the agent contains zirconium, fluorine, an amino-containing alkoxysilane, and a hydroxyl-containing alkoxysilane with the contents of zirconium and the amino-containing alkoxysilane being 100 to 700 ppm in terms of metal and 50 to 500 ppm in terms of solid matter respectively at a fluorine/zirconium molar ratio of 3.5 to 7.0 and has a pH of 2.8 to 4.5.04-09-2009
20120153218POLISHING COMPOSITION - To provide a polishing composition which can satisfy both suppression of the surface topography and a high stock removal rate, in a polishing step in the production of a wiring structure.06-21-2012
20100207058POLISHING COMPOSITION - At least one embodiment of the invention provides a polishing composition that can achieve high polishing rate and as well can improve flatness. The polishing composition of at least one embodiment of the invention is a polishing composition suitable for a metal film, particularly a copper (Cu) film, and contains a basic compound containing an ammonium group, alkyl naphthalene sulfonate and hydrogen peroxide, the remainder being water. The pH of the polishing composition is within a range of 8 to 12. By containing those, a polishing composition that can achieve high polishing rate and improve flatness can be realized.08-19-2010
20100207057POLISHING COMPOSITION - An object of one embodiment of the present invention is to provide a polishing composition which suppresses generation of recessing and dishing and includes a higher polishing rate. The polishing composition of an embodiment of the invention is a polishing composition suitable for a metal film, particularly a copper (CU) film, and contains ammonia, hydrogen peroxide, an amino acid and an anionic surfactant, the remainder being water. By containing those, the polishing composition can suppress generation of recessing and dishing when particularly used in the second step polishing.08-19-2010
20110180747Trioka Acid Semiconductor Cleaning Compositions and Methods of Use - Semiconductor processing compositions for use with silicon wafers having an insulating layers and metalization layers on the wafers comprising water and one or more Troika acids which is also referred to as α,α-disubstituted trifunctional oximes or α-(Hydroxyimino) Phosphonoacetic acids, their salts, and their derivatives.07-28-2011
20090095939Slurry Composition for Chemical Mechanical Polishing of Metal and Polishing Method Using the Same - Provided is a slurry composition for chemical mechanical polishing (CMP) of a metal. The slurry composition comprises a copolymer whose average molecular weight is from about 600,000 to about 1,300,000 and whose monomers are acrylic acid and acrylamide in a molar ratio of about 1:30 to about 30:1. The slurry composition exhibits a non-Prestonian behavior to achieve minimized dishing and attain a high degree of planarization.04-16-2009
20090065735CLEANING SOLUTION FORMULATIONS FOR SUBSTRATES - Presented is a cleaning solution according to one embodiment of the present invention that includes a corrosion inhibitor, a solubilizing agent, an oxygen scavenger, and a complexing agent also capable as a pH adjustor. Another embodiment of the present invention includes cleaning solutions that include a pH adjustor, an optional complexing agent, and a corrosion inhibitor. The cleaning solutions may have a solubilizing agent optionally present, may have a surfactant optionally present, and may have a dielectric etchant optionally present.03-12-2009
20120187334METHOD FOR PREPARING CHEMICAL MECHANICAL POLISHING SLURRY COMPOSITION - A method for preparing a chemical mechanical polishing slurry composition comprises the steps of preparing an aqueous iron salt solution by admixing an iron salt and cooled water of 5° C. or less; preparing an oxide containing silicon and iron as an additive by admixing and stirring a silicon salt and the aqueous iron salt solution for carrying out a reaction of the silicon salt and the aqueous iron salt solution to form an additive solution; and mixing the additive solution with at least one abrasive, at least one oxidizing agent and optionally at least one additional component to form the chemical mechanical polishing slurry composition.07-26-2012
20090032766COMPOSITION AND METHOD FOR SELECTIVELY ETCHING GATE SPACER OXIDE MATERIAL - A gate spacer oxide material removal composition and process for at least partial removal of gate spacer oxide material from a microelectronic device having same thereon. The anhydrous removal composition includes at least one organic solvent, at least one chelating agent, a base fluoride:acid fluoride component, and optionally at least one passivator. The composition achieves the selective removal of gate spacer oxide material relative to polysilicon and silicon nitride from the vicinity of the gate electrode on the surface of the microelectronic device with minimal etching of metal silicide interconnect material species employed in the gate electrode architecture.02-05-2009
20100327219SOLUTION FOR FORMING POLISHING SLURRY, POLISHING SLURRY AND RELATED METHODS - A solution for forming a polishing slurry, the polishing slurry and related methods are disclosed. The solution for forming a polishing slurry may include 1H-benzotriazole (BTA) dissolved in an ionic surfactant such as a sodium alkyl sulfate solution, and perhaps a polyacrylic acid (PAA) solution. The solution can be filtered and used in a polishing slurry. This approach to solubilizing BTA results in a high BTA concentration in a polishing slurry without addition of foreign components to the slurry or increased safety hazard. In addition, the solution is easier to ship because it is very stable (e.g., can be frozen and thawed) and has less volume compared to conventional approaches. Further, the polishing slurry performance is vastly improved due to the removal of particles that can cause scratching.12-30-2010
20100327218CHEMICAL SOLUTION FOR SELECTIVELY TREATING OR REMOVING A DETERIORATED LAYER AT A SURFACE OF AN ORGANIC FILM, AND METHOD FOR USING SUCH - A method for forming an organic mask, includes:12-30-2010
20120298911Dry Etching Agent and Dry Etching Method Using the Same - A dry etching agent according to the present invention contains (A) a fluorinated propyne represented by the chemical formula: CF11-29-2012
20120280170COMPOSITIONS FOR POLISHING SILICON-CONTAINING SUBSTRATES - The invention provides chemical-mechanical polishing (CMP) compositions and methods for polishing a silicon-containing substrate. A method of the invention comprises the steps of contacting a silicon-containing substrate with a polishing pad and an aqueous CMP composition, and causing relative motion between the polishing pad and the substrate while maintaining a portion of the CMP composition in contact with the surface of the substrate to abrade at least a portion of the substrate. The CMP composition comprises a ceria abrasive, a polishing additive bearing a functional group with a pK11-08-2012
20080237535Composition for polishing semiconductor wafer, and method of producing the same - A composition for polishing a semiconductor wafer contains fumed silica particles that are produced by wet grinding using a grinding medium and that have characteristics (A) to (C):10-02-2008
20130140485METHOD FOR PRODUCING ABRASIVE GRAINS, METHOD FOR PRODUCING SLURRY, AND METHOD FOR PRODUCING POLISHING LIQUID - In the production method for abrasive grains according to the invention, an aqueous solution of a salt of a tetravalent metal element is mixed with an alkali solution, under conditions such that a prescribed parameter is 5.00 or greater, to obtain abrasive grains including a hydroxide of the tetravalent metal element.06-06-2013
20130092871COMPOSITION FOR POLISHING SILICON CARBIDE SUBSTRATE AND METHOD FOR POLISHING SILICON CARBIDE SUBSTRATE - A silicon carbide substrate polishing composition for polishing a surface of a silicon carbide substrate contains water and colloidal silica particles having a true specific gravity of 2.10 to 2.30, and has a free alkali metal ion concentration of 1 ppm to 150 ppm.04-18-2013
20110266494Stripper Solution and Method of Manufacturing Liquid Crystal Display Using the Same - A method for manufacturing a liquid crystal display includes simultaneously forming a gate electrode and a gate bus line on a transparent dielectric substrate, simultaneously forming a channel layer, an ohmic contact layer, and source/drain electrodes by forming a gate insulation film, an amorphous silicon film, a doped amorphous silicon film, and a metal film on the transparent dielectric substrate on which the gate electrode and the gate bus line are formed and etching the metal film, the amorphous silicon film, and the doped amorphous silicon film, and forming a pixel electrode by forming a protective film and a transparent metal film on the transparent dielectric substrate upon which the source/drain electrodes are formed and finely etching the transparent metal film through a lift-off process using a stripper solution.11-03-2011
20130181159SURFACE TREATMENT COMPOSITION AND SURFACE TREATMENT METHOD USING SAME - A surface treatment composition of the present invention contains a first surfactant, a second surfactant, a basic compound, and water. The surface treatment composition has a pH of 8 or more. The second surfactant has a weight-average molecular weight one-half or less that of the first surfactant. The sum of the content of the first surfactant and the content of the second surfactant is 0.00001 to 0.1% by mass.07-18-2013
20130146804POLISHING COMPOSITION AND POLISHING METHOD USING SAME - A polishing composition used in an application to polish silicon nitride is characterized by containing colloidal silica in which an organic acid, such as a sulfonic acid or a carboxylic acid, is immobilized, and having a pH of 6 or less.06-13-2013
20090140198Method of preparing metal oxide suspension - Disclosed herein is a method of preparing a metal oxide suspension, which is advantageous due to the prevention of hydration and agglomeration of the metal oxide and a simple preparation process. The method of preparing a metal oxide suspension according to this invention includes preparing metal oxide, mixing the metal oxide with a solvent and a surface treating agent to obtain a mixture, and wet milling the mixture such that the metal oxide of the mixture has a nanoscale particle size and the metal oxide is uniformly dispersed in the mixture.06-04-2009
20120273715POLISHING COMPOSITION FOR NICKEL PHOSPHOROUS MEMORY DISKS - The invention provides a chemical-mechanical polishing composition comprising alpha alumina, fumed alumina, silica, an oxidizing agent that oxidizes nickel-phosphorous, oxalic acid, optionally, tartaric acid, optionally, a nonionic surfactant, optionally, a biocide, and water. The invention also provides a method of chemically-mechanically polishing a substrate comprising contacting a substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.11-01-2012
20130153820Method and Composition for Chemical Mechanical Planarization of a Metal-Containing Substrate - A composition and associated method for chemical mechanical planarization of a metal-containing substrate afford low dishing levels in the polished substrate while simultaneously affording high metal removal rates. Suitable metal-containing substrates include tungsten- and copper-containing substrates. Components in the composition include a silatrane compound, an abrasive, and, optionally, a strong oxidizing agent, such as a per-compound.06-20-2013
20130112914Slurry Composition For Polishing And Method Of Manufacturing Phase Change Memory Device Using The Same - A slurry composition includes an abrasive agent, an oxidizing agent, and a first adsorption inhibitor including a polyethylene oxide copolymer. A method of manufacturing a phase change memory device may include providing a substrate including an interlayer insulating film having a trench and a phase change material layer on the interlayer insulating film filling the trench, and performing chemical mechanical polishing on the phase change material layer using the slurry composition to form a phase change material pattern layer.05-09-2013

Patent applications in class ETCHING OR BRIGHTENING COMPOSITIONS

Patent applications in all subclasses ETCHING OR BRIGHTENING COMPOSITIONS