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Ion or electron beam irradiation

Subclass of:

250 - Radiant energy

250492100 - IRRADIATION OF OBJECTS OR MATERIAL

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DocumentTitleDate
20110174994PARTICLE BEAM IRRADIATION APPARATUS - A particle beam irradiation apparatus which can perform high-precision beam irradiation position is obtained. The apparatus is provided with inverse mapping means having an inverse mapping mathematical expression model for generating an command value for the scanning electromagnet and an command value for kinetic energy of the charged particle beam from a desired irradiation position coordinate of the charged particle beam in an irradiation subject so that irradiation to the irradiation subject is implemented on the basis of the command values concerned, and the scanning electromagnet and the kinetic energy of the charged particle beam are controlled on the basis of the command values generated from the desired irradiation position coordinate of the charged particle beam in the irradiation subject by using the inverse mapping mathematical expression model, thereby irradiating the irradiation subject with the charged particle beam while scanning the charged particle beam.07-21-2011
20130043413Arrangement of optical fibers, and a method of forming such arrangement - A method of forming an optical fiber array. The method comprises providing a substrate having a first surface and an opposing second surface. The substrate is provided with a plurality of apertures extending through the substrate from the first surface to the second surface. Additionally, a plurality of fibers is provided. The fibers have fiber ends with a diameter smaller than the smallest diameter of the apertures. For each fiber, from the first surface side of the substrate, the fiber is inserted in a corresponding aperture such that the fiber end is positioned in close proximity of the second surface. Then the fiber is bent in a predetermined direction such that the fiber abuts a side wall of the aperture at a predetermined position. Finally, the bent fibers are bonded together using an adhesive material.02-21-2013
20090194711ELECTRON BEAM WRITING METHOD, FINE PATTERN WRITING SYSTEM, METHOD FOR MANUFACTURING UNEVEN PATTERN CARRYING SUBSTRATE, AND METHOD FOR MANUFACTURING MAGNETIC DISK MEDIUM - When writing a hard disk pattern on a substrate applied with a resist by scanning an electron beam on the substrate while rotating a rotation stage, writing is started with respect to each radial direction position of each area based on a predetermined encoder pulse for each radial direction position among those generated according to the rotational angle of the rotation stage that occurs after a predefined encoder pulse that occurs ahead in a rotational direction of a radial direction position whose write start position in a circumferential direction in each area arrives first at the writing position as the rotation stage rotates and ahead of the write start position in the circumferential direction with respect to each radial direction position, and after a predetermined time from the predetermined encoder pulse.08-06-2009
20080258083Beam Allocation Apparatus and Beam Allocation Method for Medical Particle Accelerators - The invention relates to a beam allocation apparatus (10-23-2008
20080258082Plasma Processing Method and Plasma Processing Apparatus - It is intended to provide a plasma processing method and apparatus capable of increasing the uniformity of amorphyzation processing.10-23-2008
20120175532COMPACT MODULAR EBEAM SYSTEMS AND METHODS - In an Ebeam system, the cathode assembly and/or the window assembly can be simply and quickly replaced or exchanged as required by conditions of use, without replacing the vacuum chamber, or other component systems. In some cases, replacement may be made without removing the vacuum chamber from its installed position. As a result, the cathode assembly and the window assembly can be readily changed over for maintenance. In addition, modular replacement cathode assemblies and window assemblies having varying characteristics may be selected to match a specific desired application, and then installed into the system. The system may be designed as a compact and lightweight portable device.07-12-2012
20100163755ROTATING IRRADIATION THERAPY APPARATUS - A rotating irradiation therapy apparatus used for particle beam therapy includes a rotating gantry equipped with a charged particle beam irradiation device beam transport devices for guiding a charged particle beam to the irradiation device and a roller in contact with a ring member included in the rotating gantry and supporting the gantry. A front ring is disposed in contact with the roller of a rotating body support device at one end in the axial direction of the rotating gantry and a rear ring is disposed in contact with the roller at the other end in the axial direction of the rotating gantry. At least one intermediate ring is disposed in a position different in the axial direction of the gantry between the front and rear rings and in contact with the roller.07-01-2010
20100072400METHOD FOR CLEANING A HIGH RESOLUTION SCANNING ELECTRON MICROSCOPE SAMPLE WITH A LOW POWER ION BEAM - A method for cleaning a high resolution electron microscope sample with a low power ion beam includes the following steps. One sample is transmitted to a dual beam system to perform the milling operation. The sample includes at least one cross-sectional area. The cross-sectional area includes a plurality of active areas (AA), a plurality of gates, and a plurality of gate oxides (GOx). During the milling process, re-deposition is generated, and the re-deposition covers the active area of the cross-sectional area and the gate oxide in the middle of the gate. An ion beam is applied to the cross-sectional area to remove the re-deposition. An oxide etching operation is performed to the surface of the cross-sectional area to generate surface topography. A high resolution scanning electron microscope is used to obtain an image from the cross-sectional area. The active area and the gate oxide are checked and analyzed.03-25-2010
20090289204ELECTRON BEAM EMITTER WITH SLOTTED GUN - An electron beam emitter includes an electron generator for generating electrons. The electron generator can have a housing containing at least one electron source for generating the electrons. The at least one electron source has a width. The electron generator housing can have an electron permeable region spaced from the at least one electron source for allowing extraction of the electrons from the electron generator housing. The electron permeable region can include a series of narrow elongate slots and ribs formed in the electron generator housing and extending laterally beyond the width of the at least one electron source. The electron permeable region can be configured and positioned relative to the at least one electron source for laterally spreading the electrons that are generated by the at least one electron source.11-26-2009
20100044594Apparatus for aligning a particle-beam-generated pattern to a pattern on a pre-patterned substrate - The apparatus includes a particle beam, having an axis which functions as a primary optical axis, which particle beam is used to generate a pattern on a substrate. The apparatus also includes an optical reader, having an axis which functions as a secondary optical axis. A position fiducial is located at a stationary position relative to the substrate. Registration of a pre-existing pattern and the particle beam axis to the position fiducial periodically during production of a particle-beam-generated pattern continually provides an improvement in the overall alignment of the pattern being created with the pre-existing pattern on the substrate.02-25-2010
20100096567REDUCTION IN STAGE MOVEMENT REACTION FORCE IN AN ELECTRON BEAM LITHOGRAPHY MACHINE - An electron beam lithography machine (04-22-2010
20090159818LINEAR ELECTRON SOURCE, EVAPORATOR USING LINEAR ELECTRON SOURCE, AND APPLICATIONS OF ELECTRON SOURCES - A method of charging a web or foil is described. The method includes guiding a web or foil having a thickness of 10 μm or larger with at least on roller; providing a linear electron source having a housing acting as an anode, the housing having side walls; a slit opening in the housing for trespassing of a linear electron beam, the slit opening defining a length direction of the source; a cathode being arranged within the housing and having a first side facing the slit opening; at least one gas supply for providing a gas into the housing; and a power supply for providing a high voltage between the anode and the cathode; and emitting the linear electron beam, wherein the high voltage is adjusted for providing an electron energy to implant electrons of the electron beam within the web or foil.06-25-2009
20100108915Conductive Contamination Resistant Insulator - An apparatus that forms a source bushing, while comprehending the possible formation of electrically conductive films thereon, is disclosed. Such an apparatus may advantageously be used to isolate an ion source from other components within the ion implanter, as these components may be at different electrical potentials. In one embodiment, the source bushing is constructed from a material having a lower electrical resistance than is currently used. By constructing the bushing in this manner, the effects of the applied lower resistance films is reduced, as the change in effective resistance is reduced. In other embodiments, the source bushing is purposely lined with an electrically semiconducting material, so that the effects of the later applied lining are minimized. In either case, the electrical potential between the two devices that are being isolated by the bushing is more evenly applied across the bushing.05-06-2010
20130082194CHARGED PARTICLE RADIATION DEVICE AND SOUNDPROOF COVER - A charged particle radiation device includes a sample chamber in which a sample stage adapted to mount a sample is installed, a charged particle radiation irradiation section adapted to irradiate the sample with a charged particle radiation to observe and fabricate the sample, sidewalls installed on a periphery of the sample chamber and the charged particle radiation irradiation section, a ceiling board installed on a plane located in an upper part of the sidewalls, and a sound absorbing structure section disposed below the ceiling board, and including a plurality of hole sections and a hollow section communicated with the hole sections. The sound absorbing structure section has an absorption band including a frequency band of a standing wave generated in a space surrounded by the sidewalls and the ceiling board. Further, a soundproof cover may include the sidewalls, ceiling board and sound absorbing structure.04-04-2013
20130082193CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD - A charged particle beam writing apparatus according to one aspect of the present invention includes a substrate cover attachment/detachment unit to attach or detach a substrate cover that covers a whole periphery of a substrate being a writing target from an upper part, to/from the substrate, a writing unit to write a pattern on the substrate, in a state where the substrate cover is attached to the substrate, by a charged particle beam, a position measurement unit, before and after writing by the writing unit, to measure a position of the substrate cover in a state attached to the substrate, at a predetermined measurement position, and a correction unit, with respect to a position of the substrate to which the substrate cover is attached, to correct a positional deviation amount between a position of the substrate cover measured after writing and a position of the substrate cover measured before writing.04-04-2013
20130087721CHARGED PARTICLE DOSE SIMULATION DEVICE, CHARGED PARTICLE BEAM IRRADIATION DEVICE, CHARGED PARTICLE DOSE SIMULATION METHOD, AND CHARGED PARTICLE BEAM IRRADIATION METHOD - A simulation device includes an input unit which receives an input of simulation data including material information of the irradiation target and irradiation information of a charged particle beam, and an arithmetic unit which calculates the dose distribution of the charged particle beam in the irradiation target on the basis of simulation data received by the input unit and the dose distribution kernel. The arithmetic unit segments the charged particle beam spread to a predetermined range at an intermediate portion in the traveling direction of the charged particle beam, hypothesizes a plurality of virtual shapes having conical spread with a segmented position as a start point, and calculates the dose distribution of the charged particle beam in the irradiation target on the basis of simulation data received by the input unit and a plurality of virtual shapes of the charged particle beam.04-11-2013
20120181456SYSTEMS AND METHODS OF VARYING CHARGED PARTICLE BEAM SPOT SIZE - Methods and devices enable shaping of a charged particle beam. A modified dielectric wall accelerator includes a high gradient lens section and a main section. The high gradient lens section can be dynamically adjusted to establish the desired electric fields to minimize undesirable transverse defocusing fields at the entrance to the dielectric wall accelerator. Once a baseline setting with desirable output beam characteristic is established, the output beam can be dynamically modified to vary the output beam characteristics. The output beam can be modified by slightly adjusting the electric fields established across different sections of the modified dielectric wall accelerator. Additional control over the shape of the output beam can be excreted by introducing intentional timing de-synchronization offsets and producing an injected beam that is not fully matched to the entrance of the modified dielectric accelerator.07-19-2012
20100006778ION RADIATION THERAPY SYSTEM WITH DISTAL GRADIENT TRACKING - An ion radiation therapy machine provides a control of the range of the ion beam that a Bragg peak of the beam is located according to a determined gradient of the dose plan.01-14-2010
20130048882CHARGED PARTICLE BEAM FORMING APERTURE AND CHARGED PARTICLE BEAM EXPOSURE APPARATUS - An aperture that forms a charged particle beam includes a non-evaporable getter on a surface of the aperture. The non-evaporable getter is disposed in a position to which the charged particle beam is irradiated. The degradation of the exhaust performance around a charged particle source while the charged particle source is driven is suppressed.02-28-2013
20130048883SYSTEMS AND METHODS FOR PREVENTING UNSAFE MEDICAL TREATMENT - A treatment safety device is operable by a computer-based treatment safety module to prevent, by at least one of an operational interlock and a warning indicator, a medical treatment unless the treatment safety module determines that predetermined treatment verification criteria are met. The treatment safety device can tie into an existing operational interlock, such as an electrical door interlock. In a radiation oncology application, the treatment safety module verification criteria can include a satisfactory correspondence between elements of a pending treatment and an intended treatment.02-28-2013
20090309046MULTI-FIELD CHARGED PARTICLE CANCER THERAPY METHOD AND APPARATUS COORDINATED WITH PATIENT RESPIRATION - The invention relates generally to treatment of solid cancers. More particularly, the invention relates to a multi-field imaging and/or a multi-field charged particle cancer therapy method and apparatus coordinated with patient respiration via use of feedback sensors used to monitor and/or control patient respiration. Preferably, the multi-field imaging, such as X-ray imaging, and the charged particle therapy are performed on a patient in a partially immobilized and repositionable position. X-ray and/or proton delivery is timed to patient respiration via control of charged particle beam injection, acceleration, extraction, and/or targeting methods and apparatus.12-17-2009
20120217421METHOD AND SYSTEM FOR FORMING PATTERNS USING CHARGED PARTICLE BEAM LITHOGRAPHY WITH OVERLAPPING SHOTS - A method and system for fracturing or mask data preparation or optical proximity correction or proximity effect correction or mask process correction is disclosed in which a set of shaped beam shots is determined that is capable of forming a pattern on a surface, where a plurality of shots in the same exposure pass overlap, and where the dose margin from the set of shots is calculated. A method for forming patterns on a surface is also disclosed.08-30-2012
20130056654POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS - The invention provides a positive resist composition comprising, as base resins contained therein, (A) a polymer having a weight-average molecular weight of 1000 to 500000 and containing a repeating unit which contains a structure having a hydrogen atom of a carboxyl group thereof substituted with an acid-labile group having a cyclic structure and (B) a novolak resin of a substituted or an unsubstituted fluorescein, and in addition, a photo acid generator. There can be provided a positive resist composition having an appropriate absorption to form a pattern on a highly reflective substrate with excellent pattern profile after light exposure, adhesion, implantation characteristics onto a non-planar substrate, and in addition, ion implantation resistance at the time of ion implantation; and to provide a patterning process.03-07-2013
20130056653POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS - The invention provides a positive resist composition comprising, as base resins contained therein, (A) a polymer having a weight-average molecular weight of 1000 to 500000 and containing a repeating unit which contains a structure having a hydrogen atom of a carboxyl group thereof substituted with an acid-labile group having a cyclic structure and (B) a novolak resin of a substituted or an unsubstituted naphtholphthalein, and in addition, a photo acid generator. There can be provided a positive resist composition having an appropriate absorption to form a pattern on a highly reflective substrate, excellent characteristics in adhesion and implantation onto a non-planar substrate, a good pattern profile after light exposure, and an ion implantation resistance at the time of ion implantation; and a patterning process.03-07-2013
20110012032ELECTRON BEAM STERILIZATION APPARATUS - Improved electron beam sterilization apparatus and shielding techniques for use in are provided. A controller modulates an electron beam when sterilizing an interior to an object to ensure that adequate dose is received. Sterilization carousels are configured with input/discharge feeds to reduce the possibility of humans being exposed to dangerous levels of radiation. The system reduces the amount of shielding required to thereby lower cost of installation.01-20-2011
20110012031CHARGED PARTICLE BEAM DRAWING METHOD AND APPARATUS - A charged particle beam drawing apparatus for drawing patterns corresponding to figures in a drawing data, has a portion for dividing a drawing area on the workpiece into block frames, a portion for combining at least a first block frame and a second block frame into a virtual block frame, and a portion for transferring a data of the virtual block frame from an input data dividing module to a common memory of a first converter and a second converter. The first converter converts a data of a first figure included in the first block frame into a first drawing apparatus internal format data. The second converter converts a data of a second figure included in the second block frame into a second drawing apparatus internal format data. The first figure and the second figure are included in a cell extending over the first block frame and the second block frame.01-20-2011
20110012030EBEAM STERILIZATION APPARATUS - Improved electron beam sterilization apparatus and shielding techniques for use in are provided. A controller modulates an ebeam when sterilizing an interior to an object to ensure that adequate dose is received. Sterilization carousels are configured with input/discharge feeds to reduce the possibility of humans being exposed to dangerous levels of radiation. The system reduces the amount of shielding required to thereby lower cost of installation.01-20-2011
20090114851FIB MILLING OF COPPER OVER ORGANIC DIELECTRICS - Apparatus and processes are disclosed for milling copper adjacent to organic low-k dielectric on a substrate by directing a charged-particle beam at a portion of the copper and exposing the copper to a precursor sufficient to enhance removal of the copper relative to removal of the dielectric, wherein the precursor contains an oxidizing agent, has a high sticking coefficient and a long residence time on the copper, contains atoms of at least one of carbon and silicon in amount sufficient to stop oxidation of the dielectric, and contains no atoms of chlorine, bromine or iodine. In one embodiment, the precursor comprises at least one of the group consisting of NitroEthanol, NitroEthane, NitroPropane, NitroMethane, compounds based on silazane such as HexaMethylCycloTriSilazane, and compounds based on siloxane such as Octa-Methyl-Cyclo-Tetra-Siloxane. Products of the processes are also disclosed.05-07-2009
20110278477SYNCHRONIZED X-RAY / BREATHING METHOD AND APPARATUS USED IN CONJUNCTION WITH A CHARGED PARTICLE CANCER THERAPY SYSTEM - The invention comprises an X-ray system that is orientated to provide X-ray images of a patient in the same orientation as viewed by a proton therapy beam, is synchronized with patient respiration, is operable on a patient positioned for proton therapy, and does not interfere with a proton beam treatment path. Preferably, the synchronized system is used in conjunction with a negative ion beam source, synchrotron, and/or targeting method apparatus to provide an X-ray timed with patient respiration and performed immediately prior to and/or concurrently with particle beam therapy irradiation to ensure targeted and controlled delivery of energy relative to a patient position resulting in efficient, precise, and/or accurate noninvasive, in-vivo treatment of a solid cancerous tumor with minimization of damage to surrounding healthy tissue in a patient using the proton beam position verification system.11-17-2011
20080237492METHODS AND PROCESSING SYSTEMS FOR USING A GAS CLUSTER ION BEAM TO OFFSET SYSTEMATIC NON-UNIFORMITIES IN WORKPIECES PROCESSED IN A PROCESS TOOL - Embodiments of an apparatus and methods for offsetting systematic non-uniformities using a gas cluster ion beam are generally described herein. Other embodiments may be described and claimed.10-02-2008
20100171047PARTICLE BEAM IRRADIATION APPARATUS AND PARTICLE BEAM IRRADIATION METHOD - To ensure irradiation accuracy and safety, even when an irradiation device employing a different irradiation method is used, disclosed is herein a charged particle beam irradiation apparatus that irradiates an irradiation target with charged particle beams includes:07-08-2010
20100171046LITHOGRAPHY SYSTEM AND PROJECTION METHOD - The inventions relates to a lithography system in which an electronic image pattern is delivered to a exposure tool for projecting an image to a target surface, said exposure tool comprising a control unit for controlling exposure projections, said control unit at least partly being included in the projection space of the said exposure tool, and being provided with control data by means of light signals, said light signals being coupled in to said control unit by using a free space optical interconnect comprising modulated light beams that are emitted to a light sensitive part of said control unit, wherein the modulated light beams are coupled in to said light sensitive part using a holed mirror for on axis incidence of said light beams on said light sensitive part, the hole or, alternatively, holes of said mirror being provided for passage of said exposure projections.07-08-2010
20100090131METHOD OF DETERMINING ANGLE MISALIGNMENT IN BEAM LINE ION IMPLANTERS - A method includes directing an ion beam at a plurality of differing incident angles with respect to a target surface of a substrate by tilting the substrate as the ion beam is distributed across the target surface to implant ions into a plurality of portions of the substrate, wherein each one of the plurality of differing incident angles is associated with a different one of the plurality of portions, measuring angle sensitive data from each of the plurality of portions of to the substrate, and determining an angle misalignment between the target surface and the ion beam incident on the target surface from the angle sensitive data.04-15-2010
20110291029CHARGED PARTICLE BEAM DRAWING APPARATUS AND CONTROL METHOD THEREOF - In a charged particle beam drawing apparatus, if at least one of calculating portions is free and at least one memory includes a free portion, a report that a next process can be additionally started by using at least one free calculating portion and the free portion of the memory, is transferred from a daemon to a writing control unit, and the next process is additionally started by the daemon on the basis of a start request transferred from the writing control unit to the daemon. If there is a possibility of a shortage of the calculating portions and the memory, and if a start request for starting a next process is transferred from the writing control unit to the daemon, the start request for starting the next process is refused by the daemon.12-01-2011
20120097868MODULATING IMPLANTATION FOR IMPROVED WORKPIECE SPLITTING - A first species is implanted into an entire surface of a workpiece and helium is implanted into this entire surface with a non-uniform dose. The first species may be, for example, hydrogen, helium, or nitrogen. The helium has a higher dose at a portion of a periphery of the workpiece. When the workpiece is split, this split is initiated at the periphery with the higher dose. The non-uniform dose may be formed by altering a scan speed of the workpiece or an ion beam current of the helium. In one instance, the non-uniform dose of the helium is larger than a uniform dose of the hydrogen.04-26-2012
20090184262DEVICE AND METHOD FOR ALTERING THE CHARACTERISTICS OF THREE-DIMENSIONAL SHAPED PARTS USING ELECTRONS AND USE OF SAID METHOD - The invention relates to a device and a method for altering the characteristics of a three-dimensional molded part by means of electrons, including at least one electron accelerator for generating accelerated electrons and two electron exit windows, wherein the two electron exit windows are arranged opposite one another, wherein the two electron exit windows and at least one reflector delimit a process chamber in which the surface or an edge layer of the molded part are bombarded with electrons, wherein an energy density distribution inside the process chamber can be detected at least over one spatial dimension by means of a sensor system.07-23-2009
20090140176NON-AMBIPOLAR RADIO-FREQUENCY PLASMA ELECTRON SOURCE AND SYSTEMS AND METHODS FOR GENERATING ELECTRON BEAMS - An electron generating device extracts electrons, through an electron sheath, from plasma produced using RF fields. The electron sheath is located near a grounded ring at one end of a negatively biased conducting surface, which is normally a cylinder. Extracted electrons pass through the grounded ring in the presence of a steady state axial magnetic field. Sufficiently large magnetic fields and/or RF power into the plasma allow for helicon plasma generation. The ion loss area is sufficiently large compared to the electron loss area to allow for total non-ambipolar extraction of all electrons leaving the plasma. Voids in the negatively-biased conducting surface allow the time-varying magnetic fields provided by the antenna to inductively couple to the plasma within the conducting surface. The conducting surface acts as a Faraday shield, which reduces any time-varying electric fields from entering the conductive surface, i.e. blocks capacitive coupling between the antenna and the plasma.06-04-2009
20100264335PATTERN WRITING ON A ROTATING SUBSTRATE - A method of producing an array of islands (10-21-2010
20100032587Electron beam exciter for use in chemical analysis in processing systems - The present invention is directed to a gas line electron beam exciter, gas line electron beam excitation system and method for exciting a gas using an electron beam exciter. The electron beam exciter generally comprises a variable density electron source for generating a cloud of electrons in an electron chamber and a variable energy electron extractor for accelerating electrons from the electron chamber as an electron beam and into an effluent stream for fluorescing species in the effluent. The electron density of the electron beam is variably controlled by adjusting the excitation power applied to the variable density electron source. The electrons in the electron chamber reside at a reference electrical potential of the chamber, typically near ground electrical potential. The electron energy of the electron beam is variably controlled by adjusting an electrical potential across the variable energy electron extractor, which energizes the electrons through an extraction hole of the chamber and toward the extractor. The greater the difference in the electrical potential between the electron extractor and the electron source, the higher the energy imparted to the electrons in the electron beam. The excitation power applied to the electron source can be adjusted independently from the electron energy of the electron beam, thereby altering the electron density of the electron beam without changing the energy level of the electrons of the electron beam.02-11-2010
20120025106BEAM HEAD - The present embodiments relate to a beam head including a vacuum housing, in which an electron source is arranged. The beam head also includes a beam finger that is connected to the vacuum housing and has an outlet window at a distal end. The beam head includes a transformer housing, in which a transformer connected to the electron source is arranged. The transformer housing is arranged directly on the vacuum housing.02-02-2012
20090189094ELECTRON BEAM WRITING METHOD, FINE PATTERN WRITING SYSTEM, AND MANUFACTURING METHOD OF UNEVEN PATTERN CARRYING SUBSTRATE - A fine pattern which includes servo patterns, each constituted by servo elements, and groove patterns, each for separating adjacent data tracks, is formed on a substrate applied with a resist and placed on a rotation stage by scanning an electron beam on the substrate. While rotating the substrate in one direction, the electron beam is scanned so as to completely fill servo elements corresponding to a plurality of tracks one by one during one rotation of the substrate by X-Y deflecting the electron beam and vibrating back and forth in the radius direction. Each groove pattern is set as a line-up of a plurality of groove elements divided at a predetermined angle, and groove elements corresponding to the plurality of tracks following the writing of the servo elements are sequentially written by deflection scanning the electron beam largely in a circumferential direction during the same rotation.07-30-2009
20090189095ION RADIATION THERAPY SYSTEM WITH VARIABLE BEAM RESOLUTION - An ion radiation therapy machine provides a steerable beam for treating a tumor within the patient where the exposure spot of the beam is controlled in width and/or length to effect a flexible trade-off between treatment speed, accuracy, and uniformity.07-30-2009
20100084577TECHNIQUES FOR ION IMPLANTATION OF MOLECULAR IONS - Techniques for ion implantation of molecular ions are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation comprising an ion implanter for implanting a target material with a molecular ion at a predetermined temperature to improve at least one of strain and amorphization of the target material, wherein the molecular ion is generated in-situ within an ion source.04-08-2010
20080237495Particle Therapy System - A particle therapy system for irradiating a volume of a patient to be irradiated with high-energy particles is provided. The system includes a radiation outlet of a radiation delivery and acceleration system from which a particle beam exits in order to interact with the patient positioned in an irradiation position; an imaging device for verifying the position of the volume to be irradiated in relation to the particle beam; and a patient-positioning device with which the patient can be brought into the irradiation position for irradiation. The imaging device checks the position of the volume to be irradiated in an imaging position of the patient that is spatially remote from the irradiation position, and the patient-positioning device automatically changes position between imaging position and irradiation position.10-02-2008
20090309047PARTICLE THERAPY SYSTEM - The present embodiments relate to a particle therapy system having an accelerator unit for providing a particle beam and having a particle beam transport system for guiding the particle beam. The particle beam transport system has a first subarea by which the particle beam can be guided out from a level of the accelerator unit. A gantry-based radiation room is connected to the first subarea of the particle beam transport system. The present embodiments may also relate to a particle therapy system having foundations, where the foundations are dimensioned at one point such that a gantry-based radiation room can be retrofitted at the one point. In particular the foundations at the one point are located essentially at the same height as the foundations underneath an accelerator unit and/or underneath a particle beam transport system.12-17-2009
20100084578ELECTRON BEAM LITHOGRAPHY APPARATUS AND STAGE MECHANISM THEREOF - A stage mechanism which comprises a positioning mechanism including a rotating stage and a linear movement stage, the positioning mechanism being housed in a vacuum chamber, and pipes leading from the outside of the vacuum chamber to the positioning mechanism. In the vacuum chamber, a trench-like space spreading underneath the positioning mechanism is provided, and the pipes connected between the positioning mechanism and vacuum bulkheads are laid to be shaped substantially like a U so as to deform in response to movement of the linear movement stage without touching an inside wall or the like of the vacuum chamber in this space.04-08-2010
20110198513CONTROL METHOD FOR ELECTRON BEAM STERILIZING DEVICE AND DEVICE PERFORMING SAID METHOD - An electron beam sterilizing device, comprises: an electron-generating filament; a beam-shaper; an output window; a high-voltage supply, capable of creating a high-voltage potential between the electron-generating filament and the output window, for acceleration of electrons; a high-voltage supply for driving current through the electron-generating filament; a control unit for controlling the operation of the electron beam sterilizing device. The electron beam sterilizing device has at least three operational states which include: an OFF-state, where there is no drive current through the electron-generating filament; an ON-state, where the electron-generating filament is kept at a temperature above the emission temperature so as to generate electrons for sterilization; and a standby state, between the OFF-state and ON-state, where the electron-generating filament is kept at a predetermined temperature just below the emission temperature. The control unit controls the device to assume the standby state.08-18-2011
20090283704PARTICLE BEAM IRRADIATION SYSTEM - It is an object of the present invention to provide a charged particle beam extraction method and particle beam irradiation system that make it possible to exercise intensity control over an extracted ion beam while a simple device configuration is employed. To accomplish the above object, there is provided a particle beam irradiation system comprising: a synchrotron for accelerating and extracting an charged particle beam; an irradiation apparatus for extracting the charged particle beam that is extracted from the synchrotron; first beam intensity modulation means for controlling the beam intensity of the charged particle beam extracted from the synchrotron during an extraction control period of an operation cycle of the synchrotron; and second beam intensity modulation means for controlling the beam intensity during each of a plurality of irradiation periods contained in the extraction control period of the operation cycle.11-19-2009
20090283703ION BEAM IRRADIATION APPARATUS AND ION BEAM MEASURING METHOD - A beam profile monitor is disposed on an orbit of an ion beam, and measures a beam intensity distribution of the ion beam. A pair of beam blocking members are opposed to each other across the ion beam in the x direction, and forms an opening through which the ion beam passes: At least one of the beam blocking members includes a plurality of movable blocking plates disposed without forming a gap in the y direction, and in an independently reciprocable manner in the x direction. A minute opening is formed between the beam blocking members opposed to each other by adjusting the positions of the beam blocking members. From a result of the intensity distribution measurement which is performed by said beam profile monitor on the ion beam passed through the minute opening, the emittance of the ion beam is calculated.11-19-2009
20090283702CHARGED PARTICLE BEAM EXTRACTION SYSTEM AND METHOD - A charged particle beam extraction system and method capable of shortening the irradiation time and increasing the number of patients treatable per unit time. The charged particle beam extraction system comprises a synchrotron for cyclically performing patterned operation including four steps of introducing, accelerating, extracting and decelerating an ion beam, an on/off switch for opening or closing connection between an RF knockout electrode and an RF power supply for applying RF power to the RF knockout electrode, and a timing controller for controlling on/off-timing of the on/off switch such that when extraction of the ion beam is stopped at least once during the extraction step of the synchrotron, an amount of the ion beam extracted from the synchrotron in one cycle is held substantially at a setting value.11-19-2009
20090294697Charged particle beam apparatus - The present invention provides a charged particle beam apparatus that keeps the degree of vacuum in the vicinity of the electron source to ultra-high vacuum such as 1012-03-2009
20120292534Multi-phase Gating for Radiation Treatment Delivery and Imaging - A multi-phase radiation therapy treatment method is provided that includes computational software to simultaneously optimize radiation plans for each phase of delivery. A specific realization of multi-phase therapy, dual gating, is described where the first radiation therapy treatment plan provides treatment during an inhale phase of a patient breathing cycle and the second radiation therapy treatment plan provides treatment during an exhale phase of the patient breathing cycle. Using a radiation therapy machine, the first radiation therapy treatment plan is delivered during the inhale phase and the second radiation therapy treatment plan is delivered during the exhale phase of the patient breathing cycle. An associated imaging method is provided for gated volumetric image guidance at multiple different phases in a single imaging acquisition.11-22-2012
20110140005ION IMPLANTING SYSTEM - An ion implanting system includes an ion generating system that generates ion beams and an ion implanting chamber in which a work-piece that is irradiated with the ion beams generated from the ion generating system is provided and into which the ion beams generated from the ion generating unit are directed. The ion generating system includes a first ion generating unit that irradiates ions to an upper portion of the work-piece and a second ion generating unit irradiating ions to a lower portion of the work-piece. The ion implanting system a can implant ions into a large work-piece through one ion implantation process with ion generating units arranged alternately with respect to each other in the transfer direction of the work-piece.06-16-2011
20080237493ELECTRON BEAM LITHOGRAPHY SYSTEM - An electron beam lithography method is provided for sequentially irradiating an electron beam deflected by a deflector on a shot-by-shot basis to draw a pattern on a surface of a sample mounted on a stage. This method includes the step of irradiating the electron beam on the sample surface as a combination of shots each irradiated in one of rectangular or square regions having the same area and different shapes, in order to draw a correction pattern. This method also includes the steps of correcting the shape of the electron beam based on the drawn correction pattern, and drawing a pattern using the shape-corrected electron beam.10-02-2008
20080237494CONFIGURATION MANAGEMENT AND RETRIEVAL SYSTEM FOR PROTON BEAM THERAPY SYSTEM - In a complex, multi-processor software controlled system, such as proton beam therapy system (PBTS), it may be important to provide treatment configurable parameters that are easily modified by an authorized user to prepare the software controlled systems for various modes of operation. This particular invention relates to a configuration management system for the PBTS that utilizes a database to maintain data and configuration parameters and also to generate and distribute system control files that can be used by the PBTS for treatment delivery. The use of system control files reduces the adverse effects of single point failures in the database by allowing the PBTS to function independently from the database. The PBTS accesses the data, parameters, and control settings from the database through the system control files, which insures that the data and configuration parameters are accessible when and if single point failures occur with respect to the database.10-02-2008
20080290299PARTICLE THERAPY SYSTEM - A particle therapy system is provided. The particle therapy system includes at least two acceleration units, with each of which acceleration units particles can be accelerated to at least an energy necessary for the irradiation; and a common energy selection system, connected downstream of the at least two acceleration units, with which system the energy of particles that have been accelerated by one of the acceleration units can be reduced.11-27-2008
20080290297Particle Accelerator for Radiotherapy by Means of Ion Beams - The invention relates to a particle accelerator for radiotherapy by means of ion beams (11-27-2008
20080290298METHOD AND SYSTEM FOR TREATING AN INTERIOR SURFACE OF A WORKPIECE USING A CHARGED PARTICLE BEAM - A method and system of treating an interior surface on an internal cavity of a workpiece using a charged particle beam. A beam deflector surface of a beam deflector is placed within the internal cavity of the workpiece and is used to redirect the charged particle beam toward the interior surface to treat the interior surface.11-27-2008
20110006225METHOD AND APPARATUS FOR EBEAM TREATMENT OF WEBS AND PRODUCTS MADE THEREFROM - A method and apparatus for sterilization of webs and products made therefrom using electron beams (ebeams) is provided. A controller is configured to modulate an ebeam to ensure that a non-continuously moving web is sterilized within a desired range of exposure. During sterilization in place operations, manifolds are configured to operate to ensure that sterilants do not enter an irradiation zone to prevent damage to ebeam emitters.01-13-2011
20110006224Digital Tomosynthesis in Ion Beam Therapy Systems - Some embodiments include creation of projection images of a patient volume using one or more x-ray sources, performance of digital tomosynthesis on the projection images to generate a cross-sectional image of the patient volume, determination of a location of a target within the patient volume based on the cross-sectional image, determination of a location of a Bragg peak associated with an ion beam, and determination of a difference between the location of the target and the location of the Bragg peak.01-13-2011
20110266465ION BEAM DEVICE - Provided is an ion beam device provided with a gas electric field ionization ion source which can prevent an emitter tip from vibrating in a non-contact manner. The gas electric field ionization ion source is comprised of an emitter tip (11-03-2011
20090140174Impurity Introducing Apparatus and Impurity Introducing Method - It is an object to prevent functions expected originally from being unexhibited when impurities to be introduced into a solid sample are mixed with each other, and to implement plasma doping with high precision.06-04-2009
20090140175Method and system for fabricating a data storage medium - Embodiments of the present invention recite a method and system for fabricating a data storage medium. In one embodiment, a detectable pattern is created at the surface of a substrate. An electron beam lithography process is then initiated upon the substrate. The detectable pattern is used to control the positioning of an electron beam relative to the surface of the substrate during the electron beam lithography process06-04-2009
20090050824METHOD OF FABRICATING A STRUCTURE FROM DIAMOND MATERIAL OR DIAMOND-LIKE CARBON MATERIAL - A method of fabricating a structure from diamond material or diamond-like carbon material, and a structure according to the method, the method comprising the steps of imposing a structural transformation on the crystallographic structure of the material in a first region located at a first depth below a surface of the material; imposing a structural transformation on the crystallographic structure of the material in a second region located at a second depth below the surface of the material and above of the first region, the second depth being selected so that the first region is separated from the second region by a third region; and removing at least a portion of the material of the first and second regions; wherein the structural transformations are imposed so that the crystallographic structure of the third region is largely unaffected and the third region has opposite surface portions from which material of the first and second regions has been removed.02-26-2009
20090084987CHARGE NEUTRALIZATION IN A PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a process chamber, a source configured to generate a plasma in the process chamber, and a platen configured to support a workpiece in the process chamber. The platen is biased with a pulsed platen signal having pulse ON and OFF time periods to accelerate ions from the plasma towards the workpiece during the pulse ON time periods and not the pulse OFF time periods. A plate is positioned in the process chamber. The plate is biased with a plate signal to accelerate ions from the plasma towards the plate to cause an emission of secondary electrons from the plate during at least a portion of one of the pulse OFF time periods of the pulsed platen signal to at least partially neutralize charge accumulation on the workpiece.04-02-2009
20080237491APPARATUS AND METHODS FOR SYSTEMATIC NON-UNIFORMITY CORRECTION USING A GAS CLUSTER ION BEAM - Embodiments of an apparatus and methods for correcting systematic non-uniformities using a gas cluster ion beam are generally described herein. Other embodiments may be described and claimed.10-02-2008
20110226968METHOD FOR MULTI-BEAM EXPOSURE ON A TARGET - For irradiating a target with a beam of energetic electrically charged particles comprising a plurality of beamlets, the target is exposed in a sequence of exposure stripes composed image pixels. These stripes (s09-22-2011
20090212238Apparatus for ion nitriding an aluminum alloy part and process employing such apparatus - The invention relates to a device for implanting ions in an aluminium alloy part (08-27-2009
20090200489HERMETICALLY SEALED HOUSING WITH ELECTRICAL FEED-IN - The invention relates to a hermetically sealed housing with an electrical feed-in. A standard printed circuit board 08-13-2009
20090200490GENERATING AND VISUALIZING AN ION BEAM PROFILE - A method for generating and visualizing an ion beam profile is provided. The method includes specifying an incidence direction of a particle beam, specifying a target region that is to be irradiated by said particle beam, creating an ion beam profile from points that are located on a downstream side of the target region or that are located in front of the target region and project onto the contour of the target region with respect to the incidence direction, and displaying a graphical representation of the ion beam profile.08-13-2009
20090230327Particle therapy apparatus and method for modulating a particle beam generated in an accelerator - The invention relates to a particle therapy apparatus having an accelerator for generating a particle beam, a passive energy modulator comprising an absorber element, and a control entity. The control entity is designed to switch between an active adjustment of the energy in the accelerator and a passive energy modulation by the energy modulator, for the purpose of changing the energy of the particle beam from a high energy level to a low energy level in a step-by-step manner. In particular, this has the effect of shortening the dead times when changing between the energy levels.09-17-2009
20090212239Charged particle beam apparatus - An assist gas having a very small amount and a uniform concentration is fed by a charged particle beam apparatus, in which a supply amount of gas is intermittently fed by a massflow controller, and gas is passed through a diffusion mechanism connected to the massflow controller, whereby an assist gas having a very small amount and a uniform concentration.08-27-2009
20080315127Ion Implanter Operating in Pulsed Plasma Mode - The present invention relates to an ion implanter IMP comprising a pulsed plasma source SPL, a substrate-carrier tray PPS, and a power supply ALT for the tray. The implanter also includes a capacitor C connected directly to ground E and connected downstream from the tray power supply ALT. The invention also provides a method of using the implanter.12-25-2008
20110204264ION IMPLANTATION THROUGH LASER FIELDS - Ions are generated and directed toward a workpiece. A laser source generates a laser that is projected above the workpiece in a line. As the laser is generated, a fraction of the ions are blocked by the laser. This may enable selective implantation or modification of the workpiece. In one particular embodiment, the lasers are generated while ions are directed toward the workpiece and then stopped. Ions are still directed toward the workpiece after the lasers are stopped.08-25-2011
20090314961METHOD AND APPARATUS FOR INTENSITY CONTROL OF A CHARGED PARTICLE BEAM EXTRACTED FROM A SYNCHROTRON - The invention comprises intensity control of a charged particle beam acceleration, extraction, and/or targeting method and apparatus used in conjunction with charged particle beam radiation therapy of cancerous tumors. Particularly, intensity of a charged particle stream of a synchrotron is described. Intensity control is described in combination with turning magnets, edge focusing magnets, concentrating magnetic field magnets, winding and control coils, and extraction elements of the synchrotron. The system reduces the overall size of the synchrotron, provides a tightly controlled proton beam, directly reduces the size of required magnetic fields, directly reduces required operating power, and allows continual acceleration of protons in a synchrotron even during a process of extracting protons from the synchrotron.12-24-2009
20100012859Method For Treating A Target Volume With A Particle Beam And Device Implementing Same - A method for treating or irradiating a target volume (01-21-2010
20090078890ION SOURCE, ION IMPLANTATION APPARATUS, AND ION IMPLANTATION METHOD - This ion source generates a ribbon-like ion beam whose dimension in the Y direction is larger than the dimension in the X direction. This ion source includes a plasma generating vessel having an ion extraction port extending in the Y direction, a plurality of cathodes arranged in a plurality of stages along the Y direction on one side in the X direction in the plasma generating vessel, a reflecting electrode arranged on the other side in the X direction in the plasma generating vessel opposite to the cathodes, and electromagnets for generating magnetic fields along the X direction in regions including the plurality of cathodes in the plasma generating vessel.03-26-2009
20100187445ION BOMBARDMENT METHOD FOR REDUCING THE POROSITY OF METAL DEPOSITS - The invention relates to a method for treating a metal deposit to reduce or eliminate the porosity thereof by bombarding the same with an ion source. The source is, for example, an electron cyclotron resonance (RCE) source. The metal can be gold. The ion bombardment has the effect of sealing the porosity of the metal deposit according to the type, energy, amount and angle of incidence of the ions.07-29-2010
20100219357SYSTEM, METHOD AND APPARATUS FOR MULTI-BEAM LITHOGRAPHY INCLUDING A DISPENSER CATHODE FOR HOMOGENEOUS ELECTRON EMISSION - A dispenser cathode which is comprises an emission surface, a reservoir for material releasing, when heated, work-function-lowering particles, and at least one passage for allowing diffusion of work-function-lowering particles from said reservoir to said emission surface, and emission surface comprising at least one emission area and at least one non-emission area covered with emission-suppressing material and surrounding each emission area, said non-emission area comprising at least one passage connecting said reservoir with said non-emission area and debouching within a diffusion length distance from an emission area for allowing diffusion of work-function-lowering particles from said reservoir to said emission area.09-02-2010
20100176309ION RADIATION THERAPY SYSTEM WITH ROCKING GANTRY MOTION - A radiation therapy system for heavy ions employs a rocking motion of a fan beam used to treat the patient, the fan beam having individually modulated beamlets, the rocking limited in angular extent to provide improved conformance of the dose to a tumor while shielding distal tissue from radiation.07-15-2010
20100213393CHARGED PARTICLE BEAM PROCESSING METHOD - Plural charged particle beams are simultaneously radiated to a surface of an object for processing it while the beams are moved relative to the surface of the object by the same movement. Among the plurality of charged particle beams, a first charged particle beam is an ion beam for a shape correcting process that is used to variable control a scanning speed along a raster scan trajectory. A second charged particle beam is an ion beam for a smoothing process that is used to variable control a pulse width or the amount of current according to a variation in the scanning speed. Plural processing operations with different distributions of the number of particles that reach a unit area on surface of the object are performed at the same time. Therefore, the processing time is reduced.08-26-2010
20100213394OPTIMIZATION OF CONTROL PARAMETERS FOR A PARTICLE IRRADIATION SYSTEM - A device for determining control parameters for a particle irradiation system that deposits different dose values at different target points in a target volume through the selection of sampling points by a particle beam is provided. The device includes an input for receiving information relating to a predefined dose distribution via target points, and a determination component for determining a particle number distribution that is to be deposited during the irradiation via sampling points. The determining takes place using the predefined dose distribution and a variable, which takes into account differences in the particle number distribution between particle numbers of different sampling points.08-26-2010
20100237260Ion implantation systems - An ion implantation apparatus of high energy is disclosed in this invention. The new and improved system can have a wide range of ion beam energy at high beam transmission rates and flexible operation modes for different ion species. This high energy implantation system can be converted into a medium current by removing RF linear ion acceleration unit.09-23-2010
20100237261CHARGED PARTICLE BEAM WRITING APPARATUS - A blanking deflector 09-23-2010
20100237262ELECTRON BEAM WRITING METHOD AND APPARATUS - When performing pattern writing by emitting an electron beam, a fixed frequency component, which is a component of a variation in an encoder signal from the encoder in one rotation of the rotation stage that commonly appears in a plurality of different rotational speeds of the rotation stage, is compensated for by deflection correcting the electron beam in a circumferential direction, and a variable frequency component, which is a component of the variation in the encoder signal other than the fixed frequency component, is compensated for by changing the clock frequency of a write clock.09-23-2010
20100243919METHOD FOR MODIFYING A MATERIAL LAYER USING GAS CLUSTER ION BEAM PROCESSING - A method of modifying a material layer on a substrate is described. The method comprises forming the material layer on the substrate. Thereafter, the method comprises establishing a gas cluster ion beam (GCIB) having an energy per atom ratio ranging from about 0.25 eV per atom to about 100 eV per atom, and modifying the material layer by exposing the material layer to the GCIB.09-30-2010
20100001212CHARGED PARTICLE BEAM IRRADIATION SYSTEM AND CHARGED PARTICLE BEAM EXTRACTION METHOD - A charged particle beam irradiation system includes measurement means 01-07-2010
20100243921ION RADIATION THERAPY SYSTEM WITH VARIABLE BEAM RESOLUTION - An ion radiation therapy machine provides a steerable beam for treating a tumor within the patient where the exposure spot of the beam is controlled in width and/or length to effect a flexible trade-off between treatment speed, accuracy, and uniformity.09-30-2010
20110101245EVAPORATION SYSTEM - The present invention relates to an evaporation system comprising a vacuum chamber, a crucible for receiving an evaporation material, a substrate holder for receiving a substrate, and an electron beam source for heating the evaporation material to be deposited on the substrate, wherein the electron beam source together with the crucible and the substrate holder are arranged inside of the vacuum chamber, the electron beam source is a field emission electron beam source, and the evaporation system further comprises a control unit for controlling the direction of electrons emitted by the field emission electron beam source such that the emitted electrons heat the evaporation material such that it evaporates.05-05-2011
20100127190CHARGED PARTICLE BEAM MASKING FOR LASER ABLATION MICROMACHINING - An improved method for substrate micromachining. Preferred embodiments of the present invention provide improved methods for the utilization of charged particle beam masking and laser ablation. A combination of the advantages of charged particle beam mask fabrication and ultra short pulse laser ablation are used to significantly reduce substrate processing time and improve lateral resolution and aspect ratio of features machined by laser ablation to preferably smaller than the diffraction limit of the machining laser.05-27-2010
20090321665Irradiation Device - The present invention relates to an irradiation device for irradiating an irradiation object with heavy charged particles at an irradiation station, comprising a particle accelerator for providing a particle beam and a swivelling device for swivelling the particle beam impinging on the irradiation object, wherein the swivelling device comprises a carrier pivotable about an axis. In accordance with the invention, the irradiation device is characterized in that the particle accelerator is mounted on the pivotable carrier.12-31-2009
20090200492ION IMPLANTATION METHOD AND APPARATUS - Using a beam current of an ion beam, a dose amount to a substrate, and a reference scan speed, a scan number of the substrate is calculated as an integer value in which digits after a decimal point are truncated. If the scan number is smaller than 2, the process is aborted. If the scan number is equal to or larger than 2, it is determined whether the scan number is even or odd. If the scan number is even, the current scan number is set as a practical scan number. If the scan number is odd, an even scan number which is smaller by 1 than the odd scan number is obtained, and the obtained even scan number is set as a practical scan number. A practical scan speed of the substrate is calculated by using the practical scan number, the beam current, and the dose amount.08-13-2009
20090200491ION IMPLANTATION METHOD AND APPARATUS - Using a beam current of an ion beam, and a dose amount to a substrate, and an initial value of a scan number of the substrate set to 1, a scan speed of the substrate is calculated. If the scan speed is within the range, the current scan number and the current scan speed are set as a practical scan number and a practical scan speed, respectively. If the scan speed is higher than the upper limit of the range, the calculation process is aborted. If the scan speed is lower than the lower limit of the range, the scan number is incremented by one to calculate a corrected scan number. A corrected scan speed is calculated by using the corrected scan number, etc. The above steps are repeated until the corrected scan speed is within the allowable scan speed range.08-13-2009
20090114852PARTICLE BEAM THERAPY SYSTEM - Disclosed herein is a particle beam therapy system which includes a synchrotron which accelerates beams of charged particles to a desired energy level and permits extraction of the beams of charged particles exceeding the stability limit, an irradiation device which irradiates an object with the beams of charged particles, a beam transport system which conducts the beams of charged particles extracted from the synchrotron to the irradiation device, and a control unit which works in such a way as to remove part of the beams of charged particles circling in the synchrotron and allow the rest of the circling beams of charged particles to be extracted from the synchrotron and conducted to the irradiation device. The particle beam therapy system produces irradiation beams suitable for high-precision particle beam therapy by the spot scanning method or the like.05-07-2009
20100294955METHOD AND SYSTEM OF MONITORING E-BEAM OVERLAY AND PROVIDING ADVANCED PROCESS CONTROL - A method for monitoring overlay of a direct-write system. The method includes providing a substrate having a pattern formed thereon by the direct-write system, generating data associated with the substrate pattern, decomposing the data by applying a transformation matrix, and determining an overlay index based on the decomposed data, the overlay index corresponding to a variation component of the substrate pattern relative to a target pattern.11-25-2010
20110248189METHOD FOR PREVENTING DETERIORATION OF EDIBLE OIL OR INDUSTRIAL OIL AND APPARATUS THEREFOR - A fluororesin-coated electric wire cable is wound around a ring-shaped groove defined by an outer periphery of a cylinder and two flange edges immersed in an edible oil in a tank, forming each oscillating unit having a coil part; and the oscillating units are connected to an electromagnetic wave generator through a relay unit. Electromagnetic waves are irradiated from the coil parts based on an alternating current having a single frequency, an alternating current having a plurality of single frequencies different from one another, or an alternating current having a timewise varying frequency, the alternating currents each being within a frequency band of 4 kHz to 25 kHz, and a treatment based on a far-infrared heater or far-infrared ceramic is used combinedly therewith, to prevent deterioration of an edible oil or industrial oil.10-13-2011
20130134328PROCESSING SYSTEM - A processing system includes a particle beam column for generating a particle beam directed to a first processing location; a laser system for generating a laser beam directed to a second processing location located at a distance from the first processing location; and a protector including an actuator and a plate connected to the actuator. The actuator is configured to move the plate between a first position in which it protects a component of the particle beam column from particles released from the object by the laser beam and a second position in which the component of the particle beam column is not protected from particles released from the object by the laser beam.05-30-2013
20100301235METHOD AND APPARATUS FOR IRRADIATION OF A MOVING TARGET VOLUME - A method of determining an actual, especially an actual effective, radiation dose distribution of a moving target volume includes detecting first and further positions of volume elements of the target volume in a first and at least one further motional state of the moving target volume, determining transformation parameters by transformation of the first positions into the further positions, irradiating the moving target volume in accordance with an irradiation plan which comprises a plurality of raster points to be irradiated, wherein during the irradiation of a raster point it is detected which of the motional states is occupied by the moving target volume, assigning raster points to subirradiation plans and determining the actual effective dose for each of the plurality of volume elements, in each case from contributions from the raster points of the subirradiation plans using the transformation parameters. Calculation and application of correction parameters which compensate for changes, caused by movement, to the position of the Bragg maximum and to the biologically effective dose applied.12-02-2010
20130193353CHARGED PARTICLE ACCELERATOR AND PARTICLE BEAM THERAPY SYSTEM - The objective is to obtain a charged particle accelerator where the amount of pattern data for operating an acceleration cavity and electromagnets based on time clocks is reduced and the pattern data communication time is shortened. An accelerator control apparatus provided in a charged particle accelerator of the present invention is characterized by including a clock generation unit that generates an acceleration cavity clock and an electromagnet clock that is synchronized with the acceleration cavity clock and has a frequency lower than that of the acceleration cavity clock; a high-frequency control unit that controls an acceleration cavity, based on an acceleration cavity pattern stored in a first pattern memory and the acceleration cavity clock; and a deflection electromagnet control unit that controls a deflection electromagnet, based on a deflection electromagnet pattern stored in a second pattern memory and the electromagnet clock.08-01-2013
20100314560D/A Converter and electron beam exposure apparatus - A D/A converter includes a D/A converter base part having a first D/A converter unit performing D/A conversion of high order bits and a second D/A converter unit performing D/A conversion of low order bits and including an auxiliary bit assigned an identical weight to a least significant bit, a correction D/A converter part, an error detection processing section generating a digital code to be set to a correction D/A converter unit in the correction D/A converter part, and a control section. The control section compares one bit current source with another bit current source in a lower order than the one bit current source, and corrects a value of the one bit current source by causing the error detection processing section to generate the digital code to be set to the correction D/A converter unit when judging that the value of the one bit current source changes.12-16-2010
20100314559IMPLANT MASK WITH MOVEABLE MASK SEGMENTS - This apparatus has two mask segments. Each mask segment has apertures that an ion beam may pass through. These mask segments can move between a first and second position using hinges. One or more workpieces are disposed behind the mask segments when these mask segments are in a second position. The two mask segments are configured to cover the one or more workpieces in one instance. Ions are implanted into the one or more workpieces through the apertures in the mask segments.12-16-2010
20100243920METHOD FOR ENHANCING A SUBSTRATE USING GAS CLUSTER ION BEAM PROCESSING - A method of enhancing a material layer on a substrate is described. The method comprises establishing a gas cluster ion beam (GCIB), and treating a host region of the substrate by exposing the host region of the substrate to the GCIB. The treatment with the GCIB may selectively remove an undesirable specie and/or introduce a desirable specie to the host region.09-30-2010
20090314960PATIENT POSITIONING METHOD AND APPARATUS USED IN CONJUNCTION WITH A CHARGED PARTICLE CANCER THERAPY SYSTEM - The invention comprises a semi-vertical or seated patient positioning, alignment, and/or control method and apparatus used in conjunction with multi-axis charged particle or proton beam radiation therapy of cancerous tumors. Patient positioning constraints are used to maintain the patient in a treatment position, including one or more of: a seat support, a back support, a head support, an arm support, a knee support, and a foot support. One or more of the positioning constraints are movable and/or under computer control for rapid positioning and/or immobilization of the patient. The system optionally uses an X-ray beam that lies in substantially the same path as a proton beam path of a particle beam cancer therapy system. The generated image is usable for: fine tuning body alignment relative to the proton beam path, to control the proton beam path to accurately and precisely target the tumor, and/or in system verification and validation.12-24-2009
20110084221ELECTRON BEAM IRRADIATION APPARATUS FOR OPEN-MOUTHED CONTAINERS - The apparatus has a rotating body 04-14-2011
20100012860ELECTRON BEAM PROCESSING DEVICE - An electron beam processing device includes a chamber housing that defines a chamber interior space and has a first opening. A carriage is movable along the first opening. An electron beam generator is disposed on the carriage so that the generated electron beam passes through the first opening when the carriage moves along the first opening. A disk is disposed between the chamber housing and the carriage and is rotatable about a rotational axis, which is perpendicular to the first opening, at least between a first rotational position and a second rotational position. The disk has a second opening spaced from the rotational axis of the disk in the radial direction. The rotational axis of the disk is disposed so that the first opening always overlaps the second opening at least along an electron beam propagation axis when the disk rotates between the first and second rotational positions.01-21-2010
20110101248Electron beam sterilizer - There is provided an electron beam sterilizer judging, in an electron beam irradiation zone, whether an electron beam amount to be irradiated to a resin bottle is proper or improper. The sterilizer includes an electron beam irradiator for irradiating the resin bottle with an electron beam through an irradiation window and a bottle conveyer for conveying the resin bottle, and the resin bottle conveyed in front of the irradiation window is irradiated with the electron beam to thereby sterilize the bottle. A beam collector is disposed in front of the irradiation window so as to oppose thereto. The beam collector is supported in an electrically insulated manner by an insulating member. When the electron beam irradiates the beam collector, an electric current flowing the beam collector is measured by an electric current measuring device. The measured electric current is compared with a predetermined reference value by a comparator, and a judging unit judges whether an amount of the electron beam irradiated to the resin bottle is proper or improper. In the judgement, when it is judged to be improper, the improper resin bottle and other resin bottles conveying before and after that resin bottle are removed by a reject unit in accordance with instructions from a command unit.05-05-2011
20110101246ACCELERATED PARTICLE IRRADIATION EQUIPMENT - Accelerated particle irradiation equipment, which performs irradiation of accelerated particles, includes an irradiation device and a building. The irradiation device includes a rotating unit rotatable about a rotation axis and performs irradiation of the accelerated particles generated by a particle accelerator. The building has an installation space in which the irradiation device is installed. The irradiation device is formed to be thin so as to have a small length in a direction of the rotation axis. A portion of the irradiation device, which has the maximum width in a radial direction orthogonal to the direction of the rotation axis, is disposed along the maximum width of the installation space.05-05-2011
20110073777ION BEAM INCIDENT ANGLE DETECTION ASSEMBLY AND METHOD - In an ion implanter, a detector assembly is employed to monitor the ion beam current and incidence angle at the location of the work piece or wafer. The detector assembly includes a plurality of pairs of current sensors and a blocker panel. The blocker panel is disposed a distance away from the sensors to allow certain of the beamlets that comprise the ion beam to reach the sensors. Each sensor in a pair of sensors measures the beam current incident thereon and the incident angle is calculated using these measurements. In this manner, beam current and incidence angle variations may be measured at the work piece site and be accommodated for, thereby avoiding undesirable beam current profiles.03-31-2011
20110073778CHARGED PARTICLE IRRADIATION SYSTEM AND METHOD FOR CONTROLLING THE SAME - A beam extraction process (interruption and restart) is appropriately performed when a failure occurs during irradiation of a spot group. A charged particle irradiation system includes a synchrotron 03-31-2011
20110062351ELECTRON BEAM IRRADIATING APPARATUS WITH MONITORING DEVICE - The electron beam irradiating apparatus with the monitoring device has an electron beam irradiating means for irradiating materials in an irradiation chamber. The monitoring device has a photographing means for imaging a lights emitted by irradiating an electron beam to the materials; a storage means that stores state of electron beam irradiation in advance; and a calculating means that processes an image, which is captured by the photographing means, to decide a state of electron beam irradiation. The storage means has stored at least three state of electron beam irradiation and also has stored image luminance associated with those states of electron beam irradiation. The calculating means loads the image, which is captured by the photographing means, to compare the loaded image with the image luminance stored in the storage means, thereby deciding a state of electron beam irradiation.03-17-2011
20120119113Implementation of CO-Gases for Germanium and Boron Ion Implants - An ion implantation system for improving performance and extending lifetime of an ion source is disclosed. A fluorine-containing dopant gas source is introduced into the ion chamber along with one or more co-gases. The one or more co-gases can include hydrogen or krypton. The co-gases mitigate the effects caused by free fluorine ions in the ion source chamber which lead to ion source failure.05-17-2012
20120119114METHOD FOR OPERATING A PARTICLE THERAPY SYSTEM - The present embodiments relate to a method for operating a particle therapy system. The particle therapy system includes a particle generation device, a beam generating device for generating a particle beam from at least one portion of the generated irradiation particles, a measuring device for automatically measuring a particle beam intensity of the particle beam, and a particle beam influencing device. The particle beam influencing device is configured to adjust the particle beam intensity as a function of the measured particle beam intensity and a predefined setpoint value for the particle beam intensity.05-17-2012
20090001289Recording Medium - A method and apparatus for a recording medium is described. In one embodiment, the invention is an apparatus. The apparatus includes a substrate. The apparatus also includes a phase change layer disposed on the substrate. The phase change layer has a first phase with a first secondary emission ratio and a second phase with a second secondary emission ratio.01-01-2009
20090001290Ion Source and Method For Operating Same - An ion source is provided that can generate an ion beam in which the width is wide, the beam current is large, and the uniformity of the beam current distribution in the width direction is high, and that can prolong the lifetime of a cathode.01-01-2009
20080315128Method and Apparatus For Flattening Solid Surface - A method for flattening a sample surface by irradiating the sample surface with a gas cluster ion beam, generates clusters of source gas in a cluster generating chamber, ionizes the generated clusters in an ionization chamber, accelerates the ionized cluster beam in an electric field of an accelerating electrode, selects a cluster size using a magnetic field of a sorting mechanism, and irradiates the surface of a sample. An irradiation angle between the sample surface and the gas cluster ion beam is less than 30° and an average cluster size of the gas cluster ion beam is 50 or above.12-25-2008
20110253911Charged Particle Beam Writing Apparatus and Charged Particle Beam Writing Method - A charged particle beam writing apparatus according to an embodiment, includes a first dose calculating unit configured to calculate a first dose map for each set of a proximity effect correction coefficient map and a base dose map of a beam; a dimension map creation unit configured to create a dimension map of a pattern by using the first dose map calculated for each set; an adder configured to add dimensions of all sets for each position of the dimension map by using the dimension map of each set; a set map creation unit configured to create a set of a proximity effect correction coefficient map and a base dose map by using an added dimension map after addition; and a second dose calculating unit configured to calculate a second dose map by using a created set of the proximity effect correction coefficient map and the base dose map.10-20-2011
20080203323Irradiation Device - Irradiation device (08-28-2008
20100320403ION ACCELERATION SYSTEM FOR MEDICAL AND/OR OTHER APPLICATIONS - The ion acceleration system or complex (T) for medical and/or other applications is composed in essence by an ion source (12-23-2010
20100320404PARTICLE THERAPY INSTALLATION - A particle therapy system includes an ECR ion source for production of charged ions, which are accelerated in an accelerator unit that follows the ECR ion source. The accelerator unit accelerates the charged ions to an energy that is used for irradiation, where the magnetic fields of the ECR ion source are matched to operation of the ECR ion source for lightweight ions, such that the ECR ion source is operated in the afterglow mode. In the afterglow mode, an afterglow beam pulse is emitted from the ECR ion source after a microwave resonance pulse has been switched off. The current level of the afterglow beam pulse is higher than a current that is emitted from the ECR ion source during use of the microwave resonance pulse.12-23-2010
20100181499ENHANCED LOW ENERGY ION BEAM TRANSPORT IN ION IMPLANTATION - An ion implantation method and system that incorporate beam neutralization to mitigate beam blowup, which can be particularly problematic in low-energy, high-current ion beams. The beam neutralization component can be located in the system where blowup is likely to occur. The neutralization component includes a varying energizing field generating component that generates plasma that neutralizes the ion beam and thereby mitigates beam blowup. The energizing field is generated with varying frequency and/or field strength in order to maintain the neutralizing plasma while mitigating the creation of plasma sheaths that reduce the effects of the neutralizing plasma.07-22-2010
20110084220ENHANCED INTEGRITY PROJECTION LENS ASSEMBLY - The present invention relates to a projection leis assembly module for directing a multitude of charged particle beamlets onto an image plane located in a downstream direction, and a method for assembling such a projection lens assembly. In particular the present invention discloses a modular projection lens assembly with enhanced structural integrity and/or increased placement precision of its most downstream electrode.04-14-2011
20100187446Heavy Ion Therapy with Microbeams - A method for delivering therapeutic heavy ion radiation to a subject, wherein a therapeutic dose of heavy ions is delivered substantially only to a target volume within the subject by generating a broad field of radiation effect substantially only within the target volume, and wherein the broad field of radiation effect is not generated in non-targeted tissue. The method includes the step of irradiating the target volume with at least two arrays of heavy ion microbeams, wherein the at least two arrays each have at least two parallel, spatially distinct heavy ion microbeams. The two arrays of microbeams are interleaved substantially only within the target volume to form a substantially continuous broad beam of radiation substantially only within the target volume.07-29-2010
20100200773APPARATUS AND METHOD FOR CHARGED-PARTICLE BEAM WRITING - An average write speed M is calculated by averaging write speeds for blocks of a tentative block size La, and write speed variation σ of the blocks with respect to the average write speed M is calculated (Step S08-12-2010
20100059693SCRIBE PROCESS MONITORING METHODOLOGY - One embodiment of the present invention sets forth a computer-implemented method for tuning laser scribe parameters during the fabrication of a solar module. The method includes analyzing the visual appearance of a laser scribe to extract various morphological parameters related to the quality of a laser scribe process used to produce the scribe. Based on the morphological parameters, the laser scribe parameters may be modified in-situ to achieve settings that are optimal for performing laser scribing in each layer of the solar module. As a result, laser scribe process cycle time may be minimized while providing better indication of the laser scribe process stability and quality relative to the prior art approaches.03-11-2010
20100059694PRESSURE-BASED GAS DELIVERY SYSTEM AND METHOD FOR REDUCING RISKS ASSOCIATED WITH STORAGE AND DELIVERY OF HIGH PRESSURE GASES - Apparatus and method for dispensing a gas using a gas source coupled in selective flow relationship with a gas manifold. The gas manifold includes flow circuitry for discharging gas to a gas-using zone, and the gas source includes a pressure-regulated gas source vessel containing the gas at superatmospheric pressure. The pressure-regulated gas source vessel can be arranged with a pressure regulator at or within the vessel and a flow control valve coupled in flow relationship to the vessel, so that gas dispensed from the vessel flows through the regulator prior to flow through the flow control valve, and into the gas manifold. The apparatus and method permit an enhancement of the safety of storage and dispensing of toxic or otherwise hazardous gases used in semiconductor processes.03-11-2010
20110186755METHODS AND APPARATUS FOR THE PLANNING AND DELIVERY OF RADIATION TREATMENTS - Methods and apparatus are provided for planning and delivering radiation treatments by modalities which involve moving a radiation source along a trajectory relative to a subject while delivering radiation to the subject. In some embodiments the radiation source is moved continuously along the trajectory while in some embodiments the radiation source is moved intermittently. Some embodiments involve the optimization of the radiation delivery plan to meet various optimization goals while meeting a number of constraints. For each of a number of control points along a trajectory, a radiation delivery plan may comprise: a set of motion axes parameters, a set of beam shape parameters and a beam intensity.08-04-2011
20120145929ELECTRON BEAM STERILIZER - Plastic containers fed by an article feeder housed in a shield chamber sterilized by being irradiated with an electron beam that is radiated from an irradiation window of an electron beam irradiation unit which is coupled to an opening of the shield chamber. In a maintenance mode, an adjustment irradiation box is detachably mounted on the electron beam irradiation unit in covering relation to the irradiation window of the electron beam irradiation unit. The adjustment irradiation box houses therein an electron beam receiver for receiving the electron beam radiated from the irradiation window, a cooling mechanism for cooling the electron beam receiver, and an exhaust mechanism for discharging an atmosphere in the adjustment irradiation box.06-14-2012
20090314959HORIZONTAL AND VERTICAL BEAM ANGLE MEASUREMENT TECHNIQUE - A system and method of quickly determining the parameters of an ion beam are disclosed. An ion beam, having a width and height dimension, is made up of a number of individual beamlets. By using a plurality of detectors, deployed over the entire beam, it is possible to quickly determine the mean angle of the beam at various locations. This information can then be used to adjust the beamline components. The detector allows a small portion of the beam to enter through a narrow slit. Varying voltages are applied to a set of electrostatic deflection plates, which enable rapid determination of the incoming beam angle. By positioning a plurality of these detectors along one or both dimensions of an ion beam, a profile of the beam can be quickly generated. This profile can then be used to adjust the various beam line components so as to improve the spread of the ion beam. This adjustment can either be made manually, or via an automated controller.12-24-2009
20100102254ELECTRON BEAM APPARATUS - A writing apparatus includes a beam current detector which detects abeam current of the electron beam during execution of the writing when the substrate is not irradiated; a fluctuation value calculator which calculates a fluctuation value of the electron beam based on the beam current; and a corrector which corrects the electron beam fluctuation during the writing based on the fluctuation value.04-29-2010
20120001096HADRON TREATMENT PLANNING WITH ADEQUATE BIOLOGICAL WEIGHTING - Treatment planning methods are provided that determine the variability of relative biological effectiveness (RBE) along a beam line and calculate, among other things, what intensity of hadron beam such as a proton or a carbon ion beam should be applied to achieve a desired biological dose at treatment site of a patient afflicted with a medical condition. Typically, three or four RBE values at three or four corresponding spacially-dispersed intervals along the beam line are calculated. In one embodiment, two RBE values for the spread-out Bragg peak (SOBP) region of the treatment site; one for the proximal section and one for the declining distal section is calculated. A third and different RBE value may be determined for the distal edge region of the SOBP. A fourth value may also be calculated for a pre-SOBP region.01-05-2012
20110101247TEMPERATURE CONTROL OF A SUBSTRATE DURING A PLASMA ION IMPLANTATION PROCESS FOR PATTERNED DISC MEDIA APPLICATIONS - Embodiments of the invention provide a method of reducing thermal energy accumulation during a plasma ion implantation process for forming patterns including magnetic and non-magnetic domains on a magnetically susceptible surface on a substrate. In one embodiment, a method of controlling a substrate temperature during a plasma ion implantation process includes (a) performing a first portion of a plasma ion implantation process on a substrate having a magnetically susceptible layer formed thereon in a processing chamber for a first time period, wherein a temperature of the substrate is maintained below about 150 degrees Celsius, (b) cooling the temperature of the substrate after the first portion of the plasma ion implantation process has been completed, and (c) performing a second portion of the plasma ion implantation process on the substrate, wherein the temperature of the substrate is maintained below 150 degrees Celsius.05-05-2011
20120061593Charged-Particle Beam Lithographic Apparatus and Lithographic Method Therefor - A charged-particle beam lithographic method is implemented by irradiating resist applied on a material surface with successive shots of a variably shaped charged-particle beam. A table is drawn up which indicates the relations of the distances of each shot of interest to adjacent shots to corresponding amounts of correction applied to sides of the shot of interest taking account of the influence of forward scattering. Corrective shot data is found from the table by translating the sides of the shot of interest located opposite to the adjacent shots. Corrective values for a proximity effect produced under the influence of backward scattering are calculated based on the corrective shot data. The shots of the beam are carried out based on the corrective shot data and on the corrective values.03-15-2012
20120056107UNIFORMITY CONTROL USING ION BEAM BLOCKERS - An ion beam is generated and the energy of this ion beam is changed from a first energy to a second energy through, for example, acceleration or deceleration. A portion of the ion beam is blocked after the energy is changed and the ion beam is implanted into a workpiece. A plurality of blockers may be used to block the beam. Each blocker may be attached to a drive unit configured to translate one of the blockers in a first direction.03-08-2012
20120056109METHOD FOR EVALUATING RADIATION MODEL DATA IN PARTICLE BEAM RADIATION APPLICATIONS - A method for evaluating radiation model data in particle beam radiation applications, in particular in proton beam therapy of a determined target volume of malignant tissue within a patient, includes the following steps: a) gaining diagnostic data for a determined target volume to be irradiated; b) calculating a particle range in the predetermined target volume based on the diagnostic data for the determined target volume; c) designing a radiation model with particle beam characteristics based on the calculated particle range and optionally on a calculated dose depth distribution; d) applying a single pencil beam shot to the determined target volume at an elevated beam energy as compared to the particle beam characteristics of the radiation model; e) measuring the beam range of the single pencil beam shot downstream of the determined target volume; and f) comparing the measured beam range to a reference beam range calculated on the basis of the radiation model.03-08-2012
20120119115RESPIRATORY INDUCTION APPARATUS, RESPIRATORY INDUCTION PROGRAM, AND PARTICLE BEAM THERAPY SYSTEM - The objective is to obtain a respiratory induction apparatus and a particle beam therapy system in which respiration can appropriately be induced by accurately evaluating the respiration. There are provided a respiratory induction control unit (05-17-2012
20120205557Method for Identifying Possible Changes in the Range of a Planned Irradiation Field Before the Patient is Irradiated with Charged Particles - A method serves as a supplemental safety mechanism before the irradiation of a patient with charged particles. By this method, differences which occur from day to day in the density composition within the patient are found, and the influence on the range of the planned irradiation field is determined. For this purpose, two high-resolution x-ray detectors are required, which form an angle of 60-120° to each other.08-16-2012
20090184263Charged Particle Beam Irradiation System - A charged particle beam irradiation system comprises a high-speed steerer (beam dump device) 07-23-2009
20120025105POWER CONCENTRATOR FOR TRANSMUTING ISOTOPES - A method of effecting a chemical, physical or transmutational change in a target material using a high power particle beam concentrated on the target material. The particle beam is scanned in a controlled manner to reduce its power density and to avoid damage to equipment which is unable to tolerate high power densities. Movement between the target and the scanned beam is synchronized to cause the scanned beam to persistently or continuously strike the target to effect the chemical, physical or transmutational change, thereby concentrating the beam on the target.02-02-2012
20100096568SUBSTRATE PROCESSING APPARATUS AND CLEANING METHOD OF THE SAME - A method for cleaning a substrate processing apparatus in which a first ion beam generator and a second ion beam generator are arranged opposite to each other to sandwich a plane on which a substrate is to be placed, and which processes two surfaces of the substrate, comprises steps of retreating the substrate from a position between the first ion beam generator and the second ion beam generator, and cleaning the second ion beam generator by emitting an ion beam from the first ion beam generator to the second ion beam generator.04-22-2010
20100084576HYBRID SCANNING FOR ION IMPLANTATION - A hybrid scanner is disclosed that is capable of performing at least one of an electric and magnetic scanning of an ion beam. The hybrid scanner comprises a plurality of magnetic elements configured to generate a magnetic field across the ion beam for magnetic scanning, and a plurality of electric elements configured to generate an electric field proximate to the ion beam for electric scanning. A power delivery controller is coupled to at least one of the magnetic elements and at least one of the electric elements, and is configured to selectively provide power to the magnetic and electric elements.04-08-2010
20120161038ACCELERATOR AND METHOD FOR IRRADIATING A TARGET VOLUME - A device operable to accelerate a particle beam to an energy for irradiating a target volume. The device includes a particle accelerator operable in a first working phase in which particles of the particle beam are accelerated to the energy and a second working phase in which the particles of the particle beam are provided and extracted for irradiating the target volume. The device further includes a control device operable to interrupt an irradiation of the target volume if the target volume assumes a predetermined state. The control device is also operable to control the particle accelerator as a function of a comparison between a residual particle number stored in the accelerator and a reference value.06-28-2012
20120161037Dose Measurement Method using Calorimeter - An ion implantation system for implanting ions into a workpiece is provided, having a process chamber and an energy source configured to produce a plasma of ions within the process chamber. A workpiece support having a support surface configured to position the workpiece within an interior region of the process chamber is configured to expose an implantation surface of the workpiece to the plasma of ions. A pulse generator is in electrical communication with the workpiece support, wherein the pulse generator is configured to apply an electrical pulse to the support, therein attracting ions to the implantation surface of the workpiece and implanting ions into the workpiece. A calorimeter is further associated with the workpiece support, wherein a controller is configured to monitor a signal from the calorimeter and to control the implantation of ions into the workpiece based, at least in part, on the signal from the calorimeter.06-28-2012
20100288946CHARGED PARTICLE BEAM IRRADIATION APPARATUS - In a charged particle beam irradiation apparatus to be adapted to a particle beam cancer treatment system or the like, a desired depth dose distribution is highly precisely created. In the charged particle beam irradiation apparatus that irradiates a particle beam, which is radiated from a particle beam generation unit, to a subject to be irradiated via a ridge filter exhibiting a cyclic thickness distribution for causing the particle beam to exhibit a desired energy distribution, the ridge filter has plural ridges thereof arranged to be perpendicular to entering directions of the particle beam.11-18-2010
20100288945METHOD FOR CREATING A THERAPY PLAN - A method for creating a therapy plan for a particle therapy, in which a filter is used to adjust the depth of penetration of the particle beam and an immobilization device is used to immobilize a body region of a patient to be treated, includes adjusting the geometry of a deformable mass of a filter to the geometry of the immobilization device. The deformable filter mass is applied, at least partially, to the immobilization device. A planning data record is obtained with recordings of the filter, so that the properties of the filter are determined on the basis of the recordings and are used in the therapy plan.11-18-2010
20120126145CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD - A charged particle beam writing apparatus includes a storage unit configured to store writing data in which there are defined a plurality of figures and resizing information indicating, with respect to each of the plurality of figures, a resizing status whether or not to perform resizing and a resizing direction used when performing resizing, a judgment determination unit configured to input the writing data and judge, with respect to each of the plurality of figures, the resizing status whether or not to perform resizing and the resizing direction used when performing resizing, a resize processing unit configured to resize, with respect to each of the plurality of figures, a dimension of a figure concerned in a judged resizing direction when it is judged to perform resizing, and a writing unit configured to write a pattern onto a target workpiece with using a resized figure and a charged particle beam.05-24-2012
20120126146ION MILLING DEVICE - Disclosed is a shield (05-24-2012
20100207041Method of Smoothing Solid Surface with Gas Cluster Ion Beam and Solid Surface Smoothing Apparatus - Scratches or similar surface roughness in a solid surface is reduced by gas cluster ion beam irradiation. A method of smoothing a solid surface with a gas cluster ion beam includes an irradiation step in which the solid surface is irradiated with a gas cluster ion beam, and the irradiation step includes a process of causing clusters from a plurality of directions to collide with at least an area (spot) irradiated with the gas cluster ion beam on the solid surface. Collision of the clusters from a plurality of directions with the spot is brought about by an irradiation of the gas cluster ion beam in which flight directions of the clusters diverge with respect to a center of the beam, for example.08-19-2010
20100207042PARTICLE BEAM TREATMENT APPARATUS AND RESPIRATION NAVIGATION APPARATUS USED THEREFOR - Target respiration information is created in which a patient respiration pattern is set in advance to a cycle suitable for an operation cycle of a synchrotron, and the target respiration information is informed to the patient, so that a patient respiration timing becomes a state suitable for an operation of the synchrotron in such a manner that the patient consciously matches with the informed information.08-19-2010
20110180732ELECTRON IRRADIATION APPARATUS OF DC-TYPE DIELECTRIC BARRIER DISCHARGE AND ELECTRICAL THERAPEUTIC APPARATUS - A DC power supply 07-28-2011
20110180731Method for Biological Modulation of Radiation Therapy - A method for the biological modulation of external beam radiation therapy, in which the temporal and spatial patterning of imparted dose is modified to maximize the dose rate to the target volume while minimizing the dose rate to healthy tissues surrounding the target volume, is provided.07-28-2011
20120211675MASK MAKING DECISION FOR MANUFACTURING (DFM) ON MASK QUALITY CONTROL - The present disclosure provide a method for making a mask. The method includes assigning a plurality of pattern features to different data types; writing the plurality of pattern features on a mask; inspecting the plurality of pattern features with different inspection sensitivities according to assigned data types; and repairing the plurality of pattern features on the mask according to the inspecting of the plurality of pattern features.08-23-2012
20120211674CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD - A charged particle beam writing apparatus includes a storage unit to store each pattern data of plural figure patterns arranged in each of plural small regions made by virtually dividing a writing region of a target workpiece to be written on which resist being coated. The charged particle beam writing apparatus further including an assignment unit to assign each pattern data of each figure pattern to be arranged in each of the plural small regions concerned, and a writing unit to write, for each of plural groups, each figure pattern in each of the plural small regions concerned by using a charged particle beam.08-23-2012
20090057571CHARGED-PARTICLE BEAM LITHOGRAPHY APPARATUS AND DEVICE MANUFACTURING METHOD - This invention discloses a charged-particle beam lithography apparatus which comprises a projection system which projects a charged-particle beam, and images a pattern on a substrate with the projected charged-particle beam. The projection system comprises a symmetrical magnetic doublet lens configured to generate a magnetic field, and an electro-static lens configured to generate an electric field superimposed on the magnetic field. The electro-static lens includes an electrode configured to apply, on at least the pupil plane of the symmetrical magnetic doublet lens, a potential to accelerate the charged-particle beam which has entered the symmetrical magnetic doublet lens.03-05-2009
20100308237OPTICAL ELEMENT PROCESSING METHOD - The entire processing apparatus is prevented from growing in size due to the size of an optical effective region of an optical element to be processed. The optical effective region of the optical element is divided into a plurality of divided regions by the dividing line and each divided region is sequentially aligned to the processable region of the ion beam. The entire optical effective region is processed by repeating the process of a raster scan with the ion beam for each divided region in all divided regions. The entire processing apparatus can be made to be small by reducing the scanning range of the ion beam.12-09-2010
20100308236MASKING APPARATUS FOR AN ION IMPLANTER - A masking apparatus includes a mask positioned upstream of a target positioned for treatment with ions. The mask is sized relative to the target to cause a first half of the target to be treated with a selective treatment of ions through the mask and a second half of the target to be treated with a blanket treatment of ions unimpeded by the mask during a first time interval. The masking apparatus also includes a positioning mechanism to change a relative position of the mask and the target so that the second half of the target is treated with the selective treatment of ions and the first half of the target is treated with the blanket implant during a second time interval. An ion implanter having the masking apparatus is also provided.12-09-2010
20100308235Programmable Particle Scatterer for Radiation Therapy Beam Formation - Interposing a programmable path length of one or more materials into a particle beam modulates scattering angle and beam range in a predetermined manner to create a predetermined spread out Bragg peak at a predetermined range. Materials can be “low Z” and “high Z” materials that include fluids. A charged particle beam scatterer/range modulator can comprise a fluid reservoir having opposing walls in a particle beam path and a drive to adjust the distance between the walls of the fluid reservoir under control by a programmable controller. A “high Z” and, independently, a “low Z” reservoir, arranged in series, can be used. When used for radiation treatment, the beam can be monitored by measuring beam intensity, and the programmable controller can adjust the distance between the opposing walls of the “high Z” reservoir and, independently, the distance between the opposing walls of the “low Z” reservoir according to a predetermined relationship to integral beam intensity. Beam scattering and modulation can be done continuously and dynamically during a treatment in order to deposit dose in a target volume in a predetermined three dimensional distribution.12-09-2010
20120223254RI MANUFACTURING APPARATUS - An RI manufacturing apparatus includes: an accelerator which accelerates charged particles; a target which is irradiated with the charged particle accelerated by the accelerator, thereby manufacturing a radioactive isotope; a built-in shield that may be a wall body which surrounds the accelerator and the target to shield radiation; and a target shield that may be a wall body which is disposed between the built-in shield and the accelerator and surrounds the target to shield the radiation09-06-2012
20120187314IRRADIATION OR IRRADIATION PLANNING SYSTEM FOR A RESCANNING METHOD USING A PARTICLE BEAM - A method for irradiating a target volume includes defining a target region having a plurality of target points. The target points are individually approachable. The method includes defining a number of rescanning passes, in which the target region is scanned multiple times, such that the plurality of target points of the target region is approached variously often during the rescanning passes. At least some target points of the plurality of target points are not approached in all of the rescanning passes. The approaching of the plurality of target points is distributed among the rescanning passes such that for a target point of the plurality of target points that is not approached in all of the rescanning passes, at least one further rescanning pass, in which the target point is not approached, is located before a final rescanning pass, in which the target point is approached.07-26-2012
20090020711A PARTICLE BEAM APPLICATION DEVICE AND AN IRRADIATION DEVICE AS WELL AS A METHOD FOR GUIDING A PARTICLE BEAM - The invention relates to a particle beam application device for directing a particle beam at a target volume for irradiating the target volume. A beam shaping device which can be disposed in a beam path of the particle beam shapes a cross-sectional profile of the particle beam, the beam shaping device being implemented such that, after shaping, the particle beam has a line-like cross-sectional profile. A controller varies the relative position of the particle beam and target volume during an irradiation run, the controller being implemented such that, by changing the relative position, the particle beam with the line-like cross-sectional profile can be scanned over the target volume to be irradiated. A line-like cross-sectional profile of a particle beam is formed for guiding a particle beam. A trajectory of the particle beam is variably changed in a direction parallel to the beam trajectory direction.01-22-2009
20090230328ELECTRON BEAM WRITING METHOD, FINE PATTERN WRITING SYSTEM, METHOD FOR MANUFACTURING UNEVEN PATTERN CARRYING SUBSTRATE, AND METHOD FOR MANUFACTURING MAGNETIC DISK MEDIUM - When writing element shapes of a fine pattern on a substrate applied with a resist by scanning an electron beam thereon, ON/OFF control is performed for emitting the electron beam at a predetermined rotational position of the substrate by a blanking-OFF signal, performing writing in a rotational direction of the substrate along with the rotation of the substrate, and terminating the writing by a blanking-ON signal based on write data to perform writing for one round, and repeating the writing based on the ON/OFF control by moving the electron beam or substrate in a radial direction of the substrate and rotation control is performed for controlling the rotation speed of the rotation stage so as to be increased for inner track writing and decreased for outer track writing inversely proportional to the radius of the writing position.09-17-2009
20120228521PARTICLE BEAM THERAPY SYSTEM - The objective is to obtain a particle beam therapy system that can suppress the effect of a leakage dose. There are provided a scanning nozzle that irradiates in a predetermined direction a particle beam emitted from an accelerator; an irradiation control unit that controls operation of the irradiation nozzle in such a way that the particle beam of a predetermined dose is sequentially irradiated onto each of a plurality of spots set in a planar direction in an irradiation subject; and a control unit that on/off-controls emission of the particle beam from the accelerator. The irradiation control unit makes the irradiation nozzle scan in a diluting manner the particle beam onto a predetermined area in the irradiation subject, in a predetermined period after a time point when emission is switched from ON to OFF, or in a period from the time point when emission is switched from ON to OFF to a time point when the particle beam is cut off.09-13-2012
20120228522CHARGED PARTICLE BEAM IRRADIATION SYSTEM AND NEUTRON BEAM IRRADIATION SYSTEM - A charged particle beam irradiation system includes: an accelerator which accelerates charged particles along an orbit, thereby emitting a charged particle beam; a gantry on which the accelerator is mounted and which can rotate or oscillate around a given axis; and an irradiation section which is mounted on the gantry and can irradiate the charged particle beam emitted from the accelerator, toward an irradiated body, wherein a shielding body which is provided in the gantry and shields radiation that is radiated from a side of the accelerator, which may be a face intersecting the radial direction of the orbit, is disposed.09-13-2012
20080296515CHARGED PARTICLE BEAM WRITING APPARATUS AND METHOD - A charged particle beam writing apparatus includes a stage on which a target object is placed and which moves in a predetermined direction, a first column configured to irradiate a first charged particle beam on a writing region of the target object, a second column which is located at the back of the first column in the predetermined direction and configured to irradiate a second charged particle beam on the writing region of the target object, and a sensor configured to measure a height level of the target object at any one of a position in front of a position where the first column irradiates the first charged particle beam in the predetermined direction and a position almost immediately under the position where the first charged particle beam is irradiated.12-04-2008
20100327188METHOD AND APPARATUS FOR IRRADIATION OF A TARGET VOLUME - A method of generating a data set defining a plurality of target points in a target volume in a body at which a particle beam is to be directed in a continuous or discontinuous process includes directing a particle beam to each of the target points so as to provide a spatial dose distribution in an area around the respective target point. The target points include a first target point having z-spacing, measured in a direction of the particle beam in a homogenous body equivalent to the body, from an adjacent second target point at a higher or lower particle energy. The method also includes defining the target points in the data set by at least one of the z-spacing and the spatial dose distribution in dependence upon a particle energy of the respective target point.12-30-2010
20080217562METHOD FOR REFORMING CARBONACEOUS MATERIALS - A carbonaceous material containing 30 atm % or more of carbon atom is reformed. The reforming is carried out by applying a DC pulse voltage to an electrode set within a chamber to generate an electron beam, and by then irradiating a surface of the carbonaceous material with the electron beam. The DC pulse voltage has a duty ratio of pulse duration per pulse of 0.05 to 5.0%, an input energy of 0.01 J/cm09-11-2008
20120080618LASER ACCELERATOR DRIVEN PARTICLE BRACHYTHERAPY DEVICES, SYSTEMS, AND METHODS - A laser accelerator driven electronic brachytherapy system, device, and method for particle based treatment of a tumor or other human diseases and conditions.04-05-2012
20100230616METHOD OF SMOOTHING SOLID SURFACE WITH GAS CLUSTER LON BEAM AND SOLID SURFACE SMOOTHING APPARATUS - Surface roughness having intervals of several tens of nanometers to about a hundred micrometers in a solid surface is reduced by directing a gas cluster ion beam to the surface. An angle formed between the normal to the solid surface and the gas cluster ion beam is referred to as an irradiation angle, and an irradiation angle at which the distance of interaction between the solid and the cluster colliding with the solid dramatically increases is referred to as a critical angle. A solid surface smoothing method includes an irradiation step of directing the gas cluster ion beam onto the solid surface at an irradiation angle not smaller than the critical angle. The critical angle is 70°.09-16-2010
20120280150GANTRY COMPRISING BEAM ANALYSER FOR USE IN PARTICLE THERAPY - The present invention relates to a particle therapy apparatus used for radiation therapy. More particularly, this invention relates to a gantry for delivering particle beams which comprises means to analyse the incoming beam. Means are integrated into the gantry to limit the momentum spread of the beam and/or the emittance of the beam.11-08-2012
20120091370IMPRINT MASK MANUFACTURING METHOD, IMPRINT MASK MANUFACTURING DEVICE, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A pattern is formed on a mask substrate. Positional deviation information between an actual position of the pattern formed on the mask substrate and a design position decided at the time of designing the pattern is calculated. A heterogeneous layer of which a volume expands more greatly than that of surrounding mask substrate region is formed in a predetermined position within the mask substrate so that volume expansion of the heterogeneous layer according to the positional deviation information is achieved.04-19-2012
20120286175COOLED MANIPULATOR TIP FOR REMOVAL OF FROZEN MATERIAL - The disclosed apparatus enables attachment to a sample to be excised from a frozen bulk sample, the transfer of the excised sample from the bulk sample to a separate cooled support structure by means of a manipulator tip that can be cooled and maintained at a temperature below that of vitreous ice and which provides both an active cooling path and cryogenic shielding to maintain the temperature of the excised sample below that of vitreous ice. The cryogenic shielding also helps minimize contamination of the cooled sample by condensation of volatile material. A method is disclosed for extracting a portion of a frozen sample, comprising attaching a thermally-isolated cooled manipulator tip to the sample with vapor deposition and removing a portion of the sample affixed to the tip without changing phase of the portion of the sample being removed, with a focused ion beam.11-15-2012
20120286174CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD - A writing apparatus wherein, for each figure pattern representative of a chip, the figure patterns are divided into shot figures represented by shot division image information for discriminating a size of each of the shot figures and an arrangement position in each of the figure patterns of each of the shot figures. Using the shot division image information and information on alignment coordinates of each of the figure patterns, an allotting processing unit allots each of the shot figures to be arranged in each of mesh regions virtually divided by a predetermined size from a reference position different from an end portion of a figure pattern concerned in a chip region. For each of the mesh regions, there is calculated a number of shots of the beam used when writing inside of a mesh region concerned based on the number of allotted shot figures.11-15-2012
20100193708METHOD OF FORMING TRENCH ISOLATION USING A MULTIPLE NOZZLE GAS CLUSTER ION BEAM PROCESS - Disclosed are methods of operation to grow, modify, deposit, or dope a layer upon a substrate using a multi-nozzle and skimmer assembly for introducing a process gas mixture, or multiple process gases mixtures, in a gas cluster ion beam (GCIB) system. Also disclosed is a method of forming a shallow trench isolation (STI) structure on a substrate, for example, an SiO08-05-2010
20130140473Automatic Control System for Selection and Optimization of Co-Gas Flow Levels - An ion implantation system for improving performance and extending lifetime of an ion source is disclosed whereby the selection, delivery, optimization and control of the flow rate of a co-gas into an ion source chamber is automatically controlled.06-06-2013
20130175459MULTI-SECTIONAL LINEAR IONIZING BAR AND IONIZATION CELL - A multi-sectional linear ionizing bar with at least four elements is disclosed. First, disclosed bars may include at least one ionization cell with at least one axis-defining linear ion emitter for establishing an ion cloud along the length thereof. Second, disclosed bars may include at least one reference electrode. Third, disclosed bars may include a manifold for receiving gas or air from a source and for delivering same past the linear emitter(s) such that substantially none of the gas/air flows into the ion cloud. Fourth, disclosed bars may include means for receiving the ionizing voltage and for delivering same to the linear emitter(s) to thereby establish the ion cloud. In this way, disclosed ionizing bars may transport ions from the plasma region toward a charge neutralization target without inducing substantial vibration of the linear emitter and without substantial contaminants from the gas/air flow reaching the linear emitter.07-11-2013
20080217561PHANTOM FOR ION RANGE DETECTION - A phantom for heavy ion radiation therapy provides characterization of an ion beam that may enter but not exit from the phantom. The phantom may include multiple materials and multiple spatially dispersed ion detectors to obtain signals that may be fit to known beam curves to accurately characterize the location and other parameters of Bragg peak of a given ion beam within a patient.09-11-2008
20120248340CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD - A charged particle beam writing apparatus includes a division/distribution processing unit to divide and distribute processed data into data groups each having an approximately equal data amount respectively, transmitting units to transmit the processed data of the groups such that processed data is transmitted in descending order with respect to order of writing processing for each data group and the groups are transmitted in parallel, memories to store the processed data of the groups such that each of the memories stores processed data of each different one of the groups, a writing order data output unit to output them, regardless of data group and in order of writing processing, and a writing unit to write a pattern on a target workpiece with a charged particle beam, based on the processed data output in the order of writing processing.10-04-2012
20130146790APPARATUS AND METHOD FOR CHARGE NEUTRALIZATION DURING PROCESSING OF A WORKPIECE - A processing system may include a plasma source for providing a plasma and a workpiece holder arranged to receive ions from the plasma. The processing system may further include a pulsed bias circuit electrically coupled to the plasma source and operable to switch a bias voltage supplied to the plasma source between a high voltage state in which the plasma source is biased positively with respect to ground and a low voltage state in which the plasma source is biased negatively with respect to the ground.06-13-2013
20080197296Particle beam irradiation system - A particle beam irradiation system includes a particle beam irradiation apparatus, which is free of a gantry structure, having a particle beam irradiator for irradiating an affected area of a patient with a particle beam, the particle beam irradiator being housed in a chamber, a CT scanner installed in the chamber, for positionally confirming the affected area of the patient, a drive unit for moving the patient from a detection range to an irradiation range, a patient fixing device for fixing the patient in position, the device being mounted on the drive unit for rotation, and a housing unit having a structure housing the drive unit with the patient fixing device mounted and the CT scanner, the housing unit being rotatable about an axis perpendicular to a plane including a direction in which the particle beam is applied and a direction in which the drive unit moves.08-21-2008
20080197295Device And Method For Producing Resist Profiled Elements - The invention relates to a device and a method for producing resist profiled elements. According to the invention, an electron beam lithography system is used to produce an electron beam, the axis of the beam being essentially perpendicular to a resist layer in which the resist profiled element is to be produced. The electron beam can be adjusted in terms of the electron surface dose in such a way that a non-orthogonal resist profiled element can be produced as a result of the irradiation by the electron beam.08-21-2008
20110240888METHOD OF TESTING ELECTRONIC COMPONENTS - A method for testing the sensitivity of electronic components and circuits against particle and photon beams using plasma acceleration, in which the flexibility of the multifaceted interaction can produce several types of radiation such as electron, proton, ion, neutron and photon radiation, and combinations of these types of radiation, in a wide range of parameters that are relevant to the use of electronic components in space, such as satellites, at high altitudes or in facilities that work with radioactive substances such as nuclear power plants. Relevant radiation parameter ranges are accessible by this method, which are hardly accessible with conventional accelerator technology. Because of the compactness of the procedure and its versatility, radiation testing can be performed in smaller laboratories at relatively low cost.10-06-2011
20090121159CLUSTER E-BEAM LITHOGRAPHY SYSTEM - A hybrid lithography system is disclosed to achieve high throughput and high resolution of sub 32 nm lithography. The hybrid system contains an optical lithographer for expose pattern area where features above 32 nm, and a cluster e-beam lithography system for expose pattern area where features is sub 32 nm.05-14-2009
20130153791Mask Manufacturing Device - According to one embodiment, a mask manufacturing device includes a positional-deviation calculating unit that acquires positional deviation information between an actual position of a pattern formed on a mask substrate and a design position decided at the time of designing the pattern to a predetermined area of a square on the mask substrate; an irradiating-condition calculating unit that calculates an irradiating condition including an irradiating amount and an irradiating position of radiation to correct the positional deviation calculated to the predetermined area of a square on the mask substrate by using positional-deviation correction information, which indicates a relationship between the irradiating amount and the irradiating position of the radiation to the mask substrate and a pattern position change after irradiation of the radiation; and an irradiating unit that irradiates the mask substrate with the radiation under the irradiating condition calculated by the irradiating-condition calculating unit.06-20-2013
20120056108SURFACE MODIFICATION METHOD OF FLUOROPOLYMERS BY ELECTRON BEAM IRRADIATION AND THE FABRICATION OF SUPERHYDROPHOBIC SURFACES USING THE SAME - A method for the surface modification of fluoropolymer films using electron beam irradiation to generate superhydrophobic surfaces is provided. This surface modification method can cause simultaneously both a physical modification roughening the fluoropolymer surfaces and a chemical modification changing the surface composition of the fluoropolymers, and therefore fabricating the superhydrophobicity on a fluoropolymer surface by controlling the dose of electron beam irradiation. Therefore, this method for the surface modification of fluoropolymers by electron beam irradiation can be used in the generation of superhydrophobic surfaces required in various industries such as paint, glue, fine chemistry, electrical and electronics, cars, and display manufacturing.03-08-2012
20130200280METHODS OF FORMING LAYERS - A method of forming a layer, the method including providing a substrate having at least one surface adapted for deposition thereon; and directing a particle beam towards the surface of the substrate, the particle beam including moderately charged ions (MCIs), substantially all the MCIs independently have charges from ±2 to ±6 and kinetic energies of not greater than about 200 eV, wherein the MCIs do not penetrate more than about 30 Å into the surface of the substrate to form a layer on the substrate.08-08-2013
20130099139CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD - A charged particle beam writing apparatus includes a unit to calculate a gradient of a convolution amount that is calculated from a convolution operation between an area density and a distribution function, a unit to calculate a small influence radius phenomenon dose correction coefficient that corrects for dimension variation due to a phenomenon whose influence radius is on an order of microns or less, by using the convolution amount and the gradient, a unit to calculate a proximity effect dose correction coefficient that corrects for dimension variation due to a proximity effect, by using a first function depending on the small influence radius phenomenon dose correction coefficient, a unit to calculate a dose by using the proximity effect dose correction coefficient and the small influence radius phenomenon dose correction coefficient, and a unit to write a figure pattern concerned on a target object, based on the dose.04-25-2013
20120085940CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD - A charged particle beam writing apparatus includes a shot division unit configured to divide a figure defined in layout data into a plurality of shot figures each having a size which can be irradiated by one shot of a charged particle beam, a shot data generating unit configured to generate each shot data for each shot figure of the plurality of shot figures, where a number of times of generating the each shot data equals a number of times of multiple writing of the each shot figure of the plurality of shot figures, such that multiplicity of the multiple writing is variable per the each shot figure, and a writing unit configured to perform the multiple writing of the each shot figure onto a target workpiece, in accordance with the number of times of the each shot data generated for the each shot figure, using a charged particle beam.04-12-2012
20120085939Ion Beam Sample Preparation Apparatus and Methods - Disclosed are embodiments of an ion beam sample preparation apparatus and methods for using the embodiments. The apparatus comprises a tilting ion beam irradiating means in a vacuum chamber that may direct ions toward a sample, a shield blocking a portion of the ions directed toward the sample, and a shield retention stage with shield retention means that replaceably and removably holds the shield in a position. The shield has datum features which abut complementary datum features on the shield retention stage when the shield is held in the shield retention stage. The shield has features which enable the durable adhering of the sample to the shield for processing the sample with the ion beam. The complementary datum features on both shield and shield retention stage enable accurate and repeatable positioning of the sample in the apparatus for sample processing and reprocessing. The tilting ion beam irradiating means may direct ions at the sample from more than one tilt angle. A rotating shield retention stage is also disclosed which works in concert with the tilting ion beam irradiating means to improve the flexibility and efficiency of the apparatus in preparing samples for microscopic observation.04-12-2012
20120085938Ion Beam Sample Preparation Apparatus and Methods - Disclosed are embodiments of an ion beam sample preparation apparatus and methods for using the embodiments. The apparatus comprises an ion beam irradiating means in a vacuum chamber that may direct ions toward a sample, a shield blocking a portion of the ions directed toward the sample, and a shield retention stage with shield retention means that replaceably and removably holds the shield in a position. The shield has datum features which abut complementary datum features on the shield retention stage when the shield is held in the shield retention stage. The shield has features which enable the durable adhering of the sample to the shield for processing the sample with the ion beam. The complementary datum features on both shield and shield retention stage enable accurate and repeatable positioning of the sample in the apparatus for sample processing and reprocessing. A retention stage lifting means allows the creation of a loading chamber that is isolated from the main vacuum chamber where sample ion beam milling takes place. A heat sink means is configured to conduct heat away from the sample undergoing sample preparation in the ion beam.04-12-2012
20120085937Ion Beam Sample Preparation Thermal Management Apparatus and Methods - Disclosed are embodiments of an ion beam sample preparation thermal management apparatus and methods for using the embodiments. The apparatus comprises an ion beam irradiating means in a vacuum chamber that may direct ions toward a sample, a shield blocking a portion of the ions directed toward the sample, and a shield retention stage with shield retention means that replaceably and removably holds the shield in a position. The shield has datum features which abut complementary datum features on the shield retention stage when the shield is held in the shield retention stage. The shield has features which enable the durable adhering of the sample to the shield for processing the sample with the ion beam. The complementary datum features on both shield and shield retention stage enable accurate and repeatable positioning of the sample in the apparatus for sample processing and reprocessing. A heat sink means is configured to conduct heat away from the sample undergoing sample preparation in the ion beam. The ion beam irradiating means may modulate ion beam intensity between at least two intensities. The shield retention stage may be stationary or rotating.04-12-2012
20120085936METHOD FOR MONITORING ION IMPLANTATION - A method capable of monitoring ion implantation. First, an ion beam and a workpiece are provided. Next, implant the workpiece by the ion beam and generate a profile having numerous signals relevant to respectively numerous relative positions between the ion beam and the workpiece, wherein the profile has at least a higher portion, a gradual portion and a lower portion. Therefore, by directly analyzing the profile without referring to a pre-determined profile and without using a profiler measuring the ion beam, some ion beam information may be acquired, such as beam height, beam width, ion beam current distribution on the ion beam cross-section, and so on, and the ion implantation may be monitored real-timely. Furthermore, when numerous workpieces are implanted in sequence, the profile(s) of one or more initially implanted workpiece(s) may be to generate a reference for calibrating the ion implantation of the following workpieces.04-12-2012

Patent applications in class Ion or electron beam irradiation