Class / Patent application number | Description | Number of patent applications / Date published |
250426000 | Arc type | 12 |
20080230713 | ION SOURCE ARC CHAMBER SEAL - An exemplary ion source for creating a stream of ions has a chamber body that at least partially bounds an ionization region of the arc chamber. The arc chamber body is used with a hot filament arc chamber housing that either directly or indirectly heats a cathode to sufficient temperature to cause electrons to stream through the ionization region of the arc chamber. A seals has a ceramic body having an outer wall that abuts the arc chamber body along a circumferential outer lip. The seal also has one or more radially inner channels bounded by one or more inner walls spaced inwardly from the outer wall. | 09-25-2008 |
20080315114 | HIGH VOLTAGE INSULATOR FOR PREVENTING INSTABILITY IN AN ION IMPLANTER DUE TO TRIPLE-JUNCTION BREAKDOWN - A high voltage insulator for preventing instability in an ion implanter due to triple junction breakdown is described. In one embodiment, there is an apparatus for preventing triple junction instability in an ion implanter. In this embodiment, there is a first metal electrode and a second metal electrode. An insulator is disposed between the first metal electrode and the second metal electrode. The insulator has at least one surface between the first metal electrode and the second metal electrode that is exposed to a vacuum that transports an ion beam generated by the ion implanter. A first conductive layer is located between the first metal electrode and the insulator. The first conductive layer prevents triple junction breakdown from occurring at an interface of the first electrode, insulator and vacuum. A second conductive layer is located between the second metal electrode and the insulator opposite the first conductive layer. The second conductive layer prevents triple junction breakdown from occurring at an interface of the second electrode, insulator and vacuum. | 12-25-2008 |
20090008570 | ARC CHAMBER FOR AN ION IMPLANTATION SYSTEM - An arc chamber for an ion implantation system includes an exit aperture positioned at a wall of the arc chamber, filaments respectively positioned at two opposing sides within the arc chamber, and repeller structures respectively positioned at two opposing walls within the arc chamber between the filaments and the arc chamber. The repeller structure includes a repeller substrate with a screw axis for fitting the repeller structure to the arc chamber, an insulator positioned underneath the repeller substrate providing an electrical isolation between the repeller substrate and the arc chamber, and a conductive spacer covering a portion of the insulator positioned in between the insulator and the arc chamber. | 01-08-2009 |
20090283695 | MULTI MODE ION SOURCE - A multi mode ion implantation system, which operates in both an arc discharge mode of operation and a non arc discharge mode of operation, is described. The multi mode ion implantation system may consist of dual ionization volumes forming two ion sources, an arc discharge source and a non arc discharge source, in tandem. The dual chambers and the two sources feed the ion implantation system with material of various species for multi mode, an arc discharge and a non arc discharge operation. | 11-19-2009 |
20100288940 | FRONT PLATE FOR AN ION SOURCE - The present invention relates to a front plate for an ion source that is suitable for an ion implanter. The front plate according to the invention comprises obverse and reverse sides, an exit aperture for allowing egress of ions from the ion source that extends substantially straight through the front plate between the obverse and reverse sides, and a slot penetrating through the front plate from obverse side to reverse side at a slant for at least part of its depth, the slot extending from a side of the front plate to join the exit aperture. The slot is slanted to occlude line of sight into the ion source when viewed from in front, yet provides an expansion gap. | 11-18-2010 |
20100320395 | EXTERNAL CATHODE ION SOURCE - An ion source is disclosed for use in fabrication of semiconductors. The ion source includes an electron emitter that includes a cathode mounted external to the ionization chamber for use in fabrication of semiconductors. In accordance with an important aspect of the invention, the electron emitter is employed without a corresponding anode or electron optics. As such, the distance between the cathode and the ionization chamber can be shortened to enable the ion source to be operated in an arc discharge mode or generate a plasma. Alternatively, the ion source can be operated in a dual mode with a single electron emitter by selectively varying the distance between the cathode and the ionization chamber. | 12-23-2010 |
20110133098 | ION DIFFUSING APPARATUS AND ION GENERATING CARTRIDGE - Disclosed is an ion diffusing apparatus that can realize easy replacement of an ion generator and can maintain a stable ion supplying capability. Also disclosed is an ion generating cartridge. In the ion diffusing apparatus, the ion generator is so configured that the generator is detachable for easy maintenance, and can deliver the positive ions and negative ions to a position remote from the apparatus in a room while uniformly generating positive ions and negative ions. An ion diffusing apparatus ( | 06-09-2011 |
20110220812 | CLEANING OF AN EXTRACTION APERTURE OF AN ION SOURCE - An ion source includes an arc chamber housing defining an arc chamber having an extraction aperture, and a wiper assembly comprising a wiper positioned outside the arc chamber in a parked position and configured to be driven from the parked position to operational positions to clean the extraction aperture. A wiper assembly for an ion source includes a wiper configured to be positioned outside an arc chamber of the ion source when in a parked position and driven from the parked position to operational positions to clean an extraction aperture of the ion source. | 09-15-2011 |
20110253903 | DEVICE FOR DESORPTION IONIZATION - The current invention involves a desorption corona beam ionization source/device for analyzing samples under atmospheric pressure without sample pretreatment. It includes a gas source, a gas flow tube, a gas flow heater, a metal tube, a DC power supply and a sample support/holder for placing the samples. A visible corona beam is formed at a sharply pointed tip at the exit of the metal tube when a stream of inert gas flows through the metal tube that is applied with a high DC voltage. The gas is heated for desorbing the analyte from solid samples and the desorbed species are ionized by the energized particles embedded in the corona beam. The ions formed are then transferred through an adjacent inlet into a mass spectrometer or other devices capable of analyzing ions. Visibility of the corona beam in the current invention greatly facilitates pinpointing a sampling area on the analyte and also makes profiling of sample surfaces possible. | 10-20-2011 |
20130299717 | ION GENERATOR - In an ion generator, a flexible discharge electrode | 11-14-2013 |
20150083931 | ION GENERATING APPARATUS - A discharge electrode | 03-26-2015 |
20150340194 | ION GENERATOR AND THERMAL ELECTRON EMITTER - An ion generator includes an arc chamber, a cathode that extends outward from the inside of the arc chamber in an axial direction and that emits a thermal electron into the arc chamber, a thermal reflector with a cylindrical shape provided around the cathode in a radial direction and extending in the axial direction, and a narrow structure configured to narrow a width in the radial direction of a gap between the cathode and the thermal reflector at a given position in the axial direction. | 11-26-2015 |