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Special photocell

Subclass of:

250 - Radiant energy

250200000 - PHOTOCELLS; CIRCUITS AND APPARATUS

250206000 - Photocell controlled circuit

250214000 - Special photocell or electron tube circuits

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DocumentTitleDate
20080258049Quantum repeater using atomic cascade transitions - Via atomic cascade emission, an entangled pair of photons may be generated. A first one of the entangled pair may be ideal for long-distance communication. The other one may be suited for mapping to a long-lived atomic memory. Also, a deterministic single photon may be produced using a feedback system. If the feedback system indicates that an excitation exists in an atomic ensemble, then the atomic ensemble may be hit with a laser to produce the deterministic single photon. Furthermore, gas in the atomic ensemble may be subdivided into independent elements each of which may function as a memory element itself. In addition, dual species matter qubits may be entangled with light. A volume in an atomic ensemble may comprise a first isotope vapor storing a first state of a qubit. The volume may also comprise a second isotope vapor configured to store a second state of the qubit.10-23-2008
20100148040GEIGER-MODE PHOTODIODE WITH INTEGRATED AND ADJUSTABLE QUENCHING RESISTOR, PHOTODIODE ARRAY, AND MANUFACTURING METHOD THEREOF - An embodiment of a Geiger-mode avalanche photodiode includes a body of semiconductor material having a first conductivity type, a first surface and a second surface; a trench extending through the body from the first surface and surrounding an active region; a lateral-isolation region within the trench, formed by a conductive region and an insulating region of dielectric material, the insulating region surrounding the conductive region; an anode region having a second conductivity type, extending within the active region and facing the first surface. The active region forms a cathode region extending between the anode region and the second surface, and defines a quenching resistor. The photodiode has a contact region of conductive material, overlying the first surface and in contact with the conductive region for connection thereof to a circuit biasing the conductive region, thereby a depletion region is formed in the active region around the insulating region.06-17-2010
20100116972PHOTOELECTRIC CONVERSION DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME - An object is to provide a photoelectric conversion device which can correct a difference between a measured light intensity and an actual light intensity, which occurs when output current decreases due to the fact that a strong light is received, and outputs the corrected current. The photoelectric conversion device includes a photoelectric conversion element; a photocurrent output circuit for providing a first current corresponding to the amount of incident light on the photoelectric conversion element; a photocurrent correcting circuit which includes a corrective photoelectric conversion element for providing a second current, the corrective photoelectric conversion element including a light shield film for blocking part of light; a photocurrent adder circuit which includes a circuit for providing a fourth current; and an amplifier circuit including a circuit which amplifies a current corresponding to the sum of the first current and the fourth current and outputs the amplified current.05-13-2010
20100116971BACK-ILLUMINATED CMOS IMAGE SENSORS - A back-illuminated image sensor includes a sensor layer disposed between an insulating layer and a circuit layer electrically connected to the sensor layer. An imaging area includes a plurality of photodetectors is formed in the sensor layer and a well that spans the imaging area. The well can be disposed between the backside of the sensor layer and the photodetectors, or the well can be a buried well formed adjacent to the backside of the sensor layer with a region including formed between the photodetectors and the buried well. One or more side wells can be formed laterally adjacent to each photodetector. The dopant in the well has a segregation coefficient that causes the dopant to accumulate on the sensor layer side of an interface between the sensor layer and the insulating layer.05-13-2010
20100044554Timebase Circuit Arrangements - A timebase is provided by a circuit including an optical source emitting a light beam which is detected and integrated by an optical detector/integrator to give an output when the integrated value reaches a preset value. The optical source is a laser or LED. The optical detector/integrator is a photon counter.02-25-2010
20120205523AVALANCHE IMPACT IONIZATION AMPLIFICATION DEVICES - A semiconductor photodetector may provide charge carrier avalanche multiplication at high field regions of a semiconductor material layer. A semiconductor current amplifier may provide current amplification by impact ionization near a high field region. A plurality of metal electrodes are formed on a surface of a semiconductor material layer and electrically biased to produce a non-uniform high electric field in which the high electric field strength accelerates avalanche electron-hole pair generation, which is employed as an effective avalanche multiplication photodetection mechanism or as an avalanche impact ionization current amplification mechanism.08-16-2012
20100108864SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD OF THE SAME, AND IMAGING APPARATUS - A solid-state imaging device includes: a pixel part having a photoelectric conversion part photoelectrically converting incident light to obtain signal charge; and a peripheral circuit part formed on a periphery of the pixel part on a semiconductor substrate. The pixel part having a vertical transistor that reads out the signal charge from the photoelectric conversion part and a planar transistor that processes the signal charge read out by the vertical transistor. The vertical transistor has a groove part formed on the semiconductor substrate; a gate insulator film formed on an inner surface of the groove part; a conducting layer formed on a surface of the gate insulator film on the semiconductor substrate within and around the groove part; a filling layer filling an interior of the groove part via the gate insulator film and the conducting layer; and an electrode layer connected to the conducting layer on the filling layer.05-06-2010
20090134315Photo-detector array - A system accountably maintains an accumulated charge of a photo-detector charge well at or around a predefined level.05-28-2009
20130082167INFORMATION ACQUISITION DEVICE, INFORMATION ACQUISITION METHOD, RECORDING MEDIUM, AND INFORMATION ACQUISITION SYSTEM - Moving-objects movable in a workspace, each includes an imaging unit with a two-dimensional light receiving surface; and a decoding processing unit. If light received by an imaging surface of the imaging unit is brightness-modulated information, the decoding processing unit decodes the received light to the information. If the information decoded by the decoding processing unit contains spatial position information of moving-objects other than a self-moving-object, the self-moving-object receives the light from light sources, has the decoding processing unit decode the light to acquire pieces of position information of the other moving-objects, thereby acquiring position information of the self-moving-object in the workspace from these pieces of position information.04-04-2013
20110309240POLARIZED LIGHT DETECTING DEVICE AND FABRICATION METHODS OF THE SAME - Described herein is a device operable to detect polarized light comprising: a substrate; a first subpixel; a second subpixel adjacent to the first subpixel; a first plurality of features in the first subpixel and a second plurality of features in the second subpixel, wherein the first plurality of features extend essentially perpendicularly from the substrate and extend essentially in parallel in a first direction parallel to the substrate and the second plurality of features extend essentially perpendicularly from the substrate and extend essentially in parallel in a second direction parallel to the substrate; wherein the first direction and the second direction are different; the first plurality of features and the second plurality of features react differently to the polarized light.12-22-2011
20130056622ANALOG ELECTRONIC CIRCUIT FOR PROCESSING A LIGHT SIGNAL, AND CORRESPONDING PROCESSING SYSTEM AND METHOD - This analog electronic circuit (03-07-2013
20120112047SENSOR CIRCUIT AND DISPLAY APPARATUS - A sensor circuit or a display apparatus from which a highly accurate sensor output can be obtained includes a photodiode, a capacitor that is connected to the photodiode via an accumulation node and accumulates charges according to an electric current in the photodiode; a sensor switching element transistor that causes the accumulation node and an output line to be conductive with respect to each other in response to a readout signal and outputs an output signal according to the potential of the accumulation node to the output line; a variable capacitor that is provided between the accumulation node and an input electrode, and whose capacitance varies when a pressure is applied by a touching operation; and a control switching element transistor to which a control signal for switching conduction and non-conduction between the variable capacitor and the accumulation node is input.05-10-2012
20120112046Visible Light Receiver Circuit - A visible light receiver circuit, which reduces the influence of ambient light, has a simple configuration, and generates low noise, is provided. The visible light receiver circuit includes a photoelectric conversion unit. The photoelectric conversion unit includes a photodiode having a cathode connected to a power source, a resistor connected in series to an anode of the photodiode, and a nonlinear resistive circuit connected in parallel to the resistor. The nonlinear resistive circuit includes, for example, a series circuit including a Zener diode and a resistor.05-10-2012
20120112045SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING TRANSISTOR - When a positive bias voltage is applied to a gate electrode of a transistor including an oxide semiconductor for longer than or equal to 10 msec, electric characteristics of the transistor, which have varied due to the light irradiation, can be brought to the state which is substantially the same as the state before the light irradiation. Note that a positive bias voltage is applied to the gate electrode of the transistor at an appropriate timing with reference to the amount of incident light received by the transistor. Accordingly, a display device in which a reduction in display quality is suppressed even when light irradiation is performed can be realized.05-10-2012
20120187280LIGHT SENSOR HAVING IR SUPPRESSION FILTER AND TRANSPARENT SUBSTRATE - Techniques are described to furnish an IR suppression filter, or any other interference based filter, that is formed on a transparent substrate to a light sensor. In one or more implementations, a light sensor includes a substrate having a surface. One or more photodetectors are formed in the substrate. The photodetectors are configured to detect light and provide a signal in response thereto. An IR suppression filter configured to block infrared light from reaching the surface is formed on a transparent substrate. The light sensor may also include a plurality of color pass filters disposed over the surface. The color pass filters are configured to filter visible light to pass light in a limited spectrum of wavelengths to the one or more photodetectors. A buffer layer is disposed over the surface and configured to encapsulate the plurality of color pass filters and adhesion layer.07-26-2012
20090236504PHOTO-SENSING DEVICE, PHOTOSENSOR, AND DISPLAY DEVICE - A photo-sensing device is disclosed, comprising a photoelectric conversion semiconductor thin film, thin films for ohmic contacts to be provided to form an incident light window on one face of the photoelectric conversion semiconductor thin film, first and second ohmic electrodes installed on the thin films for the ohmic contacts, a connection wiring for short-circuiting the first and the second ohmic electrodes, an insulating film provided on the other face of the photoelectric conversion semiconductor thin film, and a first electrode provided on the face of the insulating film that does not contact the photoelectric conversion semiconductor thin film.09-24-2009
20110297816METHOD AND APPARATUS FOR DARK CURRENT AND BLOOMING SUPRESSION IN 4T CMOS IMAGER PIXEL - A method and apparatus for operating an imager pixel that includes the act of applying a relatively small first polarity voltage and a plurality of pulses of a second polarity voltage on the gate of a transfer transistor during a charge integration period.12-08-2011
20100187408MATERIALS, SYSTEMS AND METHODS FOR OPTOELECTRONIC DEVICES - A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.07-29-2010
20120235027 OPTICAL ELEMENT AND A LIGHT DETECTION DEVICE AND AN OBJECT SENSING SYSTEM - An optical element for condensing light is provided, wherein the optical element has a first cylindrical face and a second cylindrical face at one side and a third cylindrical face at an other side and a plane including an axis of the first cylindrical face and an axis of the third cylindrical face intersects with a plane including an axis of the second cylindrical face and the axis of the third cylindrical face. A light detection device for detecting light is provided, wherein the light detection device includes the optical element as described above and an element for detecting light condensed by the optical element.09-20-2012
20100171025WAVELENGTH-SENSITIVE DETECTOR WITH ELONGATE NANOSTRUCTURES - A wavelength-sensitive detector is provided that is based on elongate nanostructures, e.g. nanowires. The elongate nanostructures are parallel with respect to a common substrate and they are grouped in at least first and second units of a plurality of parallel elongate nanostructures. The elongate nanostructures are positioned in between a first and second electrode, the first and second electrodes lying respectively in a first and second plane substantially perpendicular to the plane of substrate, whereby all elongate nanostructures in a same photoconductor unit are contacted by the same two electrodes. Circuitry is added to read out electrical signals from the photoconductor units. The electronic density of states of the elongate nanostructures in each unit is different, because the material, of which the elongate nanostructures are made, is different or because the diameter of the elongate nanostructures is different. Each unit of elongate nanostructures therefore gives a different response to incident photons such that wavelength-specific information can be derived with the device.07-08-2010
20120286144PHOTODIODE, PHOTODIODE ARRAY AND METHOD OF OPERATION - A photodiode comprises a semiconductor material having a p-n junction, the p-n junction being located between a first doping region of a first doping type and a second doping region of a second doping type, the second doping region comprising a highly doped layer and a lightly doped layer. A photodiode further comprises a voltage source being capable to apply a variable voltage between the first doping region and the lightly doped layer of the second doping region in order to vary the expansion of a space charge zone of the p-n junction.11-15-2012
20110290988PHOTOSENSITIVE SYSTEM - Disclosed is a photosensitive system including a gated photodiode having at least one field plate and a cathode and an output buffer having an input coupled to the gated photodiode for reducing the impedance of the photodiode signal and having an output for providing the reduced impedance signal. The output is electrically connected to the at least one field plate. A device including such a photosensitive system is also disclosed.12-01-2011
20090189060PHOTOELECTRIC CONVERSION APPARATUS AND IMAGE PICKUP SYSTEM USING PHOTOELECTRIC CONVERSION APPARATUS - It is a main object of the present invention to suppress the differences of color ratios of B/G and R/G when the film thicknesses of antireflective films and insulation films vary at a processing process. The present invention is a photoelectric conversion apparatus including a plurality of light receiving portions arranged on a semiconductor substrate, antireflective films formed on the light receiving portions with insulation films put between them, and color filter layers of a plurality of colors formed on the antireflective films, wherein film thicknesses of the insulation films and/or the antireflective films are changed such that changing directions of spectral transmittances at peak wavelengths of color filters on sides of the shortest wavelengths and at peak wavelengths of color filters on sides of the longest wavelengths after transmission of infrared cutting filters may be the same before and after changes.07-30-2009
20120193519OPTICAL RECEIVER HAVING VARIABLE BIAS FOR PHOTODIODE - An optical receiver is disclosed, in which a PD is biased by a positive feedback loop with respect to the photocurrent generated thereby. The optical receiver includes the PD, a current mirror to reflect the photocurrent into a mirror current, a current converter to convert the mirror current into a voltage signal, and a bias source stabilized by the negative feedback loop by sensing the output voltage thereof superposed with the voltage signal output by the current converter. The PD, the current mirror, the current converter and the bias source comprises the positive feedback loop for the photocurrent.08-02-2012
20110139966SOLID-STATE IMAGING ELEMENT AND METHOD FOR MANUFACTURING THE SAME - A solid-state imaging element includes a light-receiving element portion disposed in a semiconductor layer, an insulating layer made of a material having a refractive index n06-16-2011
20110139967APPARATUS, FOCUS DETECTION APPARATUS, AND IMAGE PICKUP SYSTEM - In a photoelectric conversion apparatus, an error can occur due to a voltage drop through a MOS transistor. In the photoelectric conversion apparatus, to reduce the error, a circuit block disposed between a unit pixel and an output line includes a differential amplifier circuit and a switch that is disposed in a feedback path of the differential amplifier circuit.06-16-2011
20100123069BACKSIDE ILLUMINATED IMAGING SENSOR WITH IMPROVED ANGULAR RESPONSE - A backside illuminated imaging pixel with improved angular response includes a semiconductor layer having a front and a back surface. The imaging pixel also includes a photodiode region formed in the semiconductor layer. The photodiode region includes a first and a second n-region. The first n-region has a centerline projecting between the front and back surfaces of the semiconductor layer. The second n-region is disposed between the first n-region and the back surface of the semiconductor layer such that the second n-region is offset from the centerline of the first n-region.05-20-2010
20100213354SOLID-STATE IMAGING ELEMENT AND DRIVING METHOD OF THE SOLID-STATE IMAGE ELEMENT - Disclosed herein is a solid-state imaging element including: (A) a light reception/charge storage region formed in a semiconductor layer, the light reception/charge storage region including M light reception/charge storage layers stacked one on top of the other, where M≧2; (B) a charge output region formed in the semiconductor layer; (C) a conduction/non-conduction control region which includes a portion of the semiconductor layer located between the light reception/charge storage region and the charge output region; and (D) a conduction/non-conduction control electrode adapted to control the conduction or non-conduction state of the conduction/non-conduction control region, wherein mth potential control electrodes are provided between the mth and (m+1)th light reception/charge storage layers, where 1≦m≦(M−1), to control the potentials of the light reception/charge storage layers.08-26-2010
20120292490LOW-FLUX AND LOW-NOISE DETECTION CIRCUIT - The detection circuit of the Source Follower per Detector type comprises a photodiode connected to an integration node. A biasing circuit makes it possible to bias the photodiode between a first reverse-bias state and a second floating state. A readout circuit is connected to the integration node for generating a signal representative of the scene observed by the photodiode. A metal shielding is arranged around the integration node. The metal shielding is connected to an output of the readout circuit configured to have a potential varying in the same direction as the potential at the integration node.11-22-2012
20110266420REDUCTION OF DELAY BETWEEN SUBSEQUENT CAPTURE OPERATIONS OF A LIGHT-DETECTION DEVICE - Disclosed are a system, a method and an apparatus of reduction of delay between subsequent capture operations of a light-detection device. In one embodiment, a light-detection circuit includes an avalanche photodiode implemented in a deep submicron CMOS technology. In addition, the light-detection circuit includes a passive quench control circuit to create an avalanche current that generates a high voltage at an output of a second inverter gate of the circuit. The light-detection circuit further includes an active quench control circuit to reduce a dead time of the circuit. The light-detection circuit also includes a reset circuit to create a low voltage at an output of the second inverter gate and to create an active reset through a PMOS transistor of the light-detection circuit.11-03-2011
20110204214METHOD AND SYSTEM FOR DETECTING LIGHT - A light detection system is disclosed. The system comprises a light absorbing layer made of a semiconductor having majority carriers and minority carriers, and being incorporated with bandgap modifying atoms at a concentration selected so as to allow generation of photocurrent indicative of absorption of photons at any wavelength at least in the range of from about 3 μm to about 5 μm.08-25-2011
20120138777OPTICAL INTERRUPTION SENSOR WITH OPPOSED LIGHT EMITTING DIODES - An optical-interrupter provides a mechanically integrated electric light source and electric light sensor positioned across a gap to transmit a light beam across the gap that may be interrupted with an opaque vane. The optical-interrupter uses conventional LEDs for both the light source and a light receiver. An integrated circuit comparator may be used to provide an adjustable threshold for the determination of whether the light beam is blocked.06-07-2012
201200680532D/3D DUAL-MODE IMAGE SENSING CIRCUITRY - A 2D/3D dual-mode image sensing circuitry is composed of a photodiode, an active sensing unit, and a pull-down unit. The photodiode is to detect and convert optical signals into electronic signals. The active sensing unit is electrically connected with one end of the photodiode for receiving electronic signals outputted by the photodiode, having an output. The pull-down unit is electrically connected with the output, providing a pull-down path. The pull-down unit has a pull-down control terminal, by which the pull-down unit can be externally controllably switched on/off, for sinking the potential or not to the aforesaid end of the photodiode. In this way, as the 2D mode is switched on, the 3D mode is switched off; on the other hand, as the 3D mode is switched on, the 2D mode is switched off.03-22-2012
20100200735OPTICAL READING SYSTEM - An optical sensor for detecting motion or movement in an area of interest is provided. The optical sensor includes a base having optical filtering properties. A sensor assembly having a light emitting diode, a CMOS sensor and a pair of lens is mounted to said base. The CMOS sensor has a range of wavelengths of light to which it has an increased sensitivity. The optical filtering properties of the base are ranged to absorb wavelengths of light in the range of increased CMOS sensor sensitivity. In this way, the effects of ambient light on the optical sensor are reduced.08-12-2010
20090200455CMOS APS WITH STACKED AVALANCHE MULTIPLICATION LAYER AND LOW VOLTAGE READOUT ELECTRONICS - An image sensor includes a pixel having a protection circuit connected to a charge multiplying photoconversion layer. The protection circuit prevents the pixel circuit from breaking down when the voltage in the pixel circuit reaches the operating voltage applied to the charge multiplying photoconversion layer in response to the image sensor being exposed to a strong light. The protection circuit causes additional voltage entering the pixel circuit from the charge multiplying photoconversion layer over a predetermined threshold voltage level to be dissipated from the storage node and any downstream components.08-13-2009
20090200454PIXEL CIRCUIT FOR GLOBAL ELECTRONIC SHUTTER - An image sensor formed of an array of pixels, each pixel including a photodiode coupled between a first reference voltage and a first switch, the first switch being operable to connect the photodiode to a first node; a capacitor arranged to store a charge accumulated by the photodiode, the capacitor being coupled between a second reference voltage and a second node; a second switch coupled between the first and second nodes, the second switch being operable to connect the capacitor to the first node; and read circuitry coupled for reading the voltage at the second node.08-13-2009
20090001256PHOTOELECTRIC CONVERSION DEVICE AND ELECTRONIC DEVICE PROVIDED WITH THE PHOTOELECTRIC CONVERSION DEVICE - It is an object to provide a photoelectric conversion device which can solve the problem of leakage current or noise caused when the photoelectric conversion device is connected to an external circuit by amplifying the current flows through the photoelectric conversion element, and which can widen dynamic range of the output voltage which is obtained in accordance with the current flowing through the photoelectric conversion element. The photoelectric conversion device includes a voltage detection circuit, and a photoelectric conversion circuit including a photoelectric conversion element, a current mirror circuit, and a field effect transistor. The current mirror circuit is a circuit which amplifies and outputs a photocurrent generated at the photoelectric conversion element. The voltage detection circuit is connected to the gate terminal of the field effect transistor so as to detect generated voltage.01-01-2009
20120104239PHOTON DETECTOR - Provided is a photon detector that enables an APD response by a sinusoidal wave-shaped gate signal and is operable at an arbitrary drive frequency without requiring a special band removing filter. The photon detector of the present invention includes: a sinusoidal wave generator (05-03-2012
20110226936PIXELS, IMAGERS AND RELATED FABRICATION METHODS - Pixels, imagers and related fabrication methods are described. The described methods result in cross-talk reduction in imagers and related devices by generating depletion regions. The devices can also be used with electronic circuits for imaging applications.09-22-2011
20130214135OPTICAL RECEIVER USING INFINITE IMPULSE RESPONSE DECISION FEEDBACK EQUALIZATION - A technique is provided for configuring an optical receiver. A photo detector is connected to a load resistor, and the photo detector includes an internal capacitance. A current source is connected through a switching circuit to the load resistor and to the photo detector. The current source is configured to discharge the internal capacitance of the photo detector. The switching circuit is configured to connect the current source to the internal capacitance based on a previous data bit.08-22-2013
20100258710OPTICAL SENSORS THAT REDUCE SPECTRAL REFLECTIONS - An optical sensor device, according to an embodiment of the present invention, includes a light source and a light detector. The light source includes one or more light emitting elements, and the light detector includes one or more light detecting elements. A first opaque light barrier portion, between the light source and the light detector, is configured to block light from being transmitted directly from the light source to the light detector. A second opaque light barrier portion, extending from the first opaque light barrier portion in a direction towards the light source, is configured to reduce an amount of specular reflections that would occur if a light transmissive cover plate were placed over the optical sensor device. A third opaque light barrier portion, extending from the first light barrier portion in a direction towards to the light detector, is configured to reduce an amount of specular reflections that would be detected by the light detector, if a light transmissive cover plate were placed over the optical sensor device.10-14-2010
20100193669SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING THE SAME, AND IMAGING APPARATUS - Realization of an adequate hole accumulation layer and reduction in dark current are allowed to become mutually compatible. A solid-state imaging device 08-05-2010
20100224765Photo Sensor With Pinned Photodiode and Sub-Linear Response - A photo sensor exhibiting low noise, low smear, low dark current and high dynamic range consists of a pinned (or buried) photodiode (PPD) with associated transfer gate (TG), a reset circuit (09-09-2010
20100224766Solid-state image device manufacturing method thereof, and image capturing apparatus - A solid-state image device is provided which includes: a photoelectric conversion portion which obtains a signal charge by photoelectric conversion of incident light; a pixel transistor portion which outputs a signal charge generated by the photoelectric conversion portion; a peripheral circuit portion which is provided at the periphery of a pixel portion including the photoelectric conversion portion and the pixel transistor portion and which has an NMOS transistor and a PMOS transistor; a first stress liner film which has a compressive stress and which is provided on the PMOS transistor; and a second stress liner film which has a tensile stress and which is provided on the NMOS transistor. In the solid-state image device described above, the photoelectric conversion portion, the pixel transistor portion, and the peripheral circuit portion are provided in and/or on a semiconductor substrate.09-09-2010
20090108181PHOTODETECTOR - A photodetector includes a plurality of photodetecting elements which output electrical signals corresponding to the intensities of light that entered these; a signal processing element which is opposed to the photodetecting elements and is connected to the photodetecting elements via conductive bumps, and into which electrical signals output from the photodetecting elements are input; a resin which has electrical insulation and is filled in at least at the gaps between the photodetecting elements and the signal processing element; and a light shielding member arranged so as to cover the surfaces exposed from the photodetecting elements and the signal processing element in the resin.04-30-2009
20100294919PHOTON DETECTION SYSTEM AND METHOD OF PHOTON DETECTION - According to one embodiment, a photon detection system determines the number of detected photons. The detection system includes an avalanche photodiode and a measuring unit. The measuring unit measures an avalanche signal induced by illumination before the avalanche current through the device has saturated.11-25-2010
20100181465Snapshot mode active pixel sensor - A snapshot pixel device with an active reset that operates in charge mode.07-22-2010
20090032684OPTICAL DEVICE AND PRODUCTION METHOD THEREOF - An optical device includes a base and an optical element chip and translucent member attached to the base. A wiring is buried in the base. One end of the wiring is an internal terminal portion. The other end of the wiring is an external terminal portion. A semiconductor chip incorporating peripheral circuits, etc., and a metal wire for connecting a pad electrode of the semiconductor chip and the wiring are buried in the base. The semiconductor chip incorporating peripheral circuits, etc., and the metal wire are buried together with the wiring in the base by molding, whereby the optical device and the semiconductor chip incorporating peripheral circuits, etc., are integrated into a single package.02-05-2009
20110240835PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING METHOD THEREOF, AND CAMERA - A photoelectric conversion device comprises an n-type surface region, a p-type region which is formed under the surface region, and an n-type buried layer which is formed under the p-type region, wherein the surface region, the p-type region, and the buried layer form a buried photodiode, and a diffusion coefficient of a dominant impurity of the surface region is smaller than a diffusion coefficient of a dominant impurity of the buried layer.10-06-2011
20110210237METHODS AND SYSTEMS FOR MEASURING THE FREQUENCY RESPONSE AND IMPULSE RESPONSE OF OBJECTS AND MEDIA - A method of optically probing an object(s) and/or a medium and/or an optical path. In some embodiments, a signal describing noisy light returned from an object(s) and/or a medium is analyzed. In some embodiments, this analysis includes spectral and/or temporal analysis.09-01-2011
20120228481LENS SHEET AND PHOTOELECTRIC CONVERSION MODULE - A lens sheet is provided which is configured to create, below the lens sheet, a region not irradiated with light when light is incident on the lens sheet from above. A photoelectric conversion element is efficiently irradiated with light incident on the lens sheet. In addition, a high-efficiency photoelectric conversion module is provided. The lens sheet includes a light-transmitting substrate having lens arrays on both sides, and the lens arrays each have lens regions and non-lens regions placed alternately (in stripes), in which an end portion of each lens region on the front side overlaps with an end portion of each lens region on the back side.09-13-2012
20120068054PHOTODETECTING DEVICE AND DISPLAY APPARATUS - Provided is a photodetecting device having a wider dynamic range with a simple configuration. A photodetecting device includes a photodiode (D03-22-2012
20090032685Trench photosensor for a CMOS imager - A trench photosensor for use in a CMOS imager having an improved charge capacity. The trench photosensor may be either a photogate or photodiode structure. The trench shape of the photosensor provides the photosensitive element with an increased surface area compared to a flat photosensor occupying a comparable area on a substrate. The trench photosensor also exhibits a higher charge capacity, improved dynamic range, and a better signal-to-noise ratio. Also disclosed are processes for forming the trench photosensor.02-05-2009
20120241599VOLTAGE OUTPUT CIRCUIT, CONNECTOR MODULE, AND ACTIVE CABLE - According to one embodiment, a circuit comprises a first resistor configured to have one end to which a first voltage is input and the other end which outputs a second voltage and a first amplifier configured to have an inverting input connected to the other end of the first resistor and a noninverting input to which a third voltage is input. The circuit further comprises a first capacitor configured to have one end to which an output of the first amplifier is input and the other end to which the other end of the first resistor is connected. An output of the first amplifier or an output of a second amplifier connected to the other end of the first resistor is a fourth voltage. In the circuit, the first resistor and a mirror capacitance composed of the first capacitor and the first amplifier constitute a low-pass filter.09-27-2012
20120175505Method and Device for Scanning-Microscopy Imaging of a Specimen - A method and a device for scanning-microscopy imaging of a specimen (07-12-2012
20120119072OPTICALLY PATTERNED VIRTUAL ELECTRODES AND INTERCONNECTS ON POLYMER AND SEMICONDUCTIVE SUBSTRATES - An optical electrical system that converts a photo image pattern to a conductance pattern comprises a photoconductive layer for receiving light image patterns and a conversion layer for converting an electrostatic voltage into a conductance pathway for a current flow. The light image pattern can be generated into a page sized area and generated from a light source comprising an array of projectors coupled together.05-17-2012
20090166516PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, PHOTOELECTRIC CONVERSION DEVICE, AND IMAGE SENSING SYSTEM - A photoelectric conversion device manufacturing method comprises: a first implantation step of implanting impurity ions of a first conductivity type into an underlying substrate via a region of the oxide film exposed by an opening, thereby forming a first semiconductor region having a first thickness in the element region; an the oxidation step of oxidizing the region of the oxide film exposed by the opening, thereby thickening the exposed region; an the exposure step of exposing a region of the oxide film which is not exposed by the opening; a the second implantation step of, after the exposure step, implanting the impurity ions of the first conductivity type into the underlying substrate via a region unthickened in the oxidation step, thereby forming a second semiconductor region having a second thickness larger than the first thickness in the element isolation region; and an the element formation step.07-02-2009
20120199727TITANIUM BLACK DISPERSION, PHOTOSENSITIVE RESIN COMPOSITION, WAFER LEVEL LENS, LIGHT BLOCKING FILM, METHOD FOR PRODUCING THE LIGHT BLOCKING FILM, AND SOLID-STATE IMAGE PICKUP ELEMENT - A titanium black dispersion includes titanium black particles, a dispersant, and an organic solvent. When the titanium black dispersion is for a wafer level lens, 90% or more of dispersed objects that consist of the titanium black particles have particle diameters of 30 nm or less, or dispersed objects including the titanium black particles contains Si atoms and the content ratio of Si atoms to Ti atoms (Si/Ti) in the dispersed objects is 0.05 or higher. When the titanium black dispersion is used for formation of a light-shielding film that is provided on one side of a silicon substrate having an image pickup device section on the other side, and that shields against infrared light, 90% or more of dispersed objects that consist of the titanium black particles have particle diameters of 30 nm or less.08-09-2012
20110133060ACTIVE PIXEL SENSOR WITH NANOWIRE STRUCTURED PHOTODETECTORS - An imaging device formed as an active pixel array combining a CMOS fabrication process and a nanowire fabrication process. The pixels in the array may include a single or multiple photogates surrounding the nanowire. The photogates control the potential profile in the nanowire, allowing accumulation of photo-generated charges in the nanowire and transfer of the charges for signal readout. Each pixel may also include a readout circuit which may include a reset transistor, a charge transfer switch transistor, source follower amplifier, and pixel select transistor. A nanowire is generally structured as a vertical rod on the bulk semiconductor substrate to receive the light energy impinging onto the tip of the nanowire. The nanowire may be configured to function as either a photodetector or a waveguide configured to guild the light beam to the bulk substrate. In the embodiments herein, with the presence of the nanowire photogate and a substrate photogate, light of different wavelengths can be detected.06-09-2011
20110133061NANOWIRE PHOTO-DETECTOR GROWN ON A BACK-SIDE ILLUMINATED IMAGE SENSOR - An embodiment relates to a device comprising a substrate having a front side and a back-side that is exposed to incoming radiation, a nanowire disposed on the substrate and an image sensing circuit disposed on the front side, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire.06-09-2011
20090173874Optoelectronic Detector with Multiple Readout Nodes and Its Use Thereof - The present invention discloses an optoelectronic detector for light sensing. The optoelectronic detector has a photosensitive element that converts light into electrons. Efficient collection of these electrons at readout nodes, embedded in the photosensitive element, is required to make correct measurements of light characteristics such as, phase shift and intensity. This collection of electrons is achieved by applying a voltage gradient across an electrode within the optoelectronic detector. The optoelectronic detector can have multiple readout nodes. Further, the present invention discloses methods for detecting intensity and phase shift of impinging light and for suppression of background illumination while detecting the characteristics of light.07-09-2009
20110315861PHOTOELECTRIC CONVERSION DEVICE - It is an object to provide a photoelectric conversion device whose power consumption and a mounting area are reduced and yield is improved and further to provide a photoelectric conversion device whose number of manufacturing processes and manufacturing cost are reduced. A photoelectric conversion device includes a photoelectric conversion element for outputting photocurrent corresponding to illuminance, and a resistor changing resistance corresponding to illuminance. In the photoelectric conversion device, one terminal of the photoelectric conversion element and one terminal of the resistor are electrically connected in series; the other terminal of the photoelectric conversion element is connected to a high power supply potential; the other terminal of the resistor is connected to a low power supply potential; and a light intensity adjusting unit is provided on a light reception surface side of the photoelectric conversion element or the resistor to adjust illuminance.12-29-2011
20120205522MULTI-MODE PHOTODETECTOR - A photodetector includes a photodiode and output circuitry coupled to the photodiode. The photodetector is configurable for operation in at least two modes. A first configurable mode operates the photodetector as an integrating sensor. In this first mode, a bias voltage across the photodiode is set below the breakdown voltage of the photodiode and the output circuitry is configured to read an analog integration output voltage from the photodiode. A second configurable mode operates the photodetector as a single photon avalanche detector. In this second mode, the bias voltage across the photodiode is set above the breakdown voltage of the photodiode and the output circuitry is configured to read an avalanche output voltage.08-16-2012
20120006978LED/OLED ARRAY APPROACH TO INTEGRATED DISPLAY, LENSLESS-CAMERA, AND TOUCH-SCREEN USER INTERFACE DEVICES AND ASSOCIATED PROCESSORS - A system for implementing a display which also serves as one or more of a tactile user interface touchscreen, light field sensor, proximate hand gesture sensor, and lensless imaging camera. In an implementation, an OLED array can be used for light sensing as well as light emission functions. In one implementation a single OLED array is used as the only optoelectronic user interface element in the system. In another implementation two OLED arrays are used, each performing and/or optimized from different functions. In another implementation, an LCD and an OLED array are used in various configurations. The resulting arrangements allow for sharing of both optoelectric devices as well as associated electronics and computational processors, and are accordingly advantageous for use in handheld devices such as cellphone, smartphones, PDAs, tablet computers, and other such devices.01-12-2012
20100176278OPTICAL NEURAL NETWORK - An input layer outputs light having a relatively narrow emission angle distribution to a middle layer as an output signal if the signal level of input signal is relatively high and outputs light having a relatively broad emission angle distribution to the middle layer as the output signal if the signal level of input signal is relatively low. The middle layer outputs light having a relatively narrow emission angle distribution as an output signal to an output layer if the signal level of the output signal from input layer is relatively high and outputs light having a relatively broad emission angle distribution to the output layer as an output signal if the signal level of the output signal from the input layer is relatively low.07-15-2010
20110049336SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREFOR, AND ELECTRONIC DEVICE - A solid-state imaging device includes: a plurality of substrates stacked via a wiring layer or an insulation layer; a light sensing section that is formed in a substrate, of the plurality of substrates, disposed on a light incident side and that generates a signal charge in accordance with an amount of received light; and a contact portion that is connected to a non-light incident-surface side of the substrate in which the light sensing section is formed and that supplies a desired voltage to the substrate from a wire in a wiring layer disposed on a non-light incident side of the substrate.03-03-2011
20120119073INPUT/OUTPUT DEVICE AND DRIVING METHOD THEREOF - An input/output device includes a pixel area; a light emission circuit provided in the pixel area and configured to emit light; and a photodetection circuit provided in the pixel area and configured to generate a voltage having a value corresponding to an intensity of incident light. The light emission circuit includes a drive transistor and a light emitting element. The light emitting element includes a first current terminal electrically connected to the source or the drain of the drive transistor and a second current terminal to which a first voltage is input, and emits light in accordance with a current flowing between the first and second current terminals. The light emission circuit includes a switching element including a first terminal to which a second voltage is input, and a second terminal electrically connected to the first current terminal of the light emitting element.05-17-2012
20120126101DETECTION CIRCUIT WITH ANTI-BLOOMING CIRCUIT - The detection circuit comprises a photodiode connected to a readout circuitry. The photodiode and readout circuitry are connected by means of a transistor arranged to operate as a closed switch when the readout circuitry biases the photodiode in a predefined range and to operate as an open switch in the other cases.05-24-2012
20120160993SYSTEM AND METHOD FOR ANALYZING LIGHT BY THREE-PHOTON COUNTING - A system for measuring one or more characteristics of light of a photon energy E06-28-2012
20100207014PHOTOELECTRIC CONVERSION DEVICE AND METHOD OF MANUFACTURING THE SAME - A photoelectric conversion device comprises a semiconductor substrate and a multilayer wiring structure, wherein the multilayer wiring structure includes a first wiring layer which serves as a top wiring layer in an effective region and contains aluminum as a principal component, a first insulation film arranged in the effective region and an light-shielded region so as to cover the first wiring layer, and a second wiring layer which serves as a top wiring layer arranged on the first insulation film in the light-shielded region and contains aluminum as a principal component, and wherein the first insulation film has, in the effective region, a first portion which is positioned above the photoelectric conversion unit, and the first portion functions as at least a part of an interlayer lens.08-19-2010
20120132791METHOD FOR DRIVING PHOTOSENSOR, METHOD FOR DRIVING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE - This invention has for purpose to provide a photosensor that is small in size and can obtain high-contrast image data and to provide a semiconductor device including the photosensor. In the photosensor including a light-receiving element, a transistor serving as a switching element, and a charge retention node electrically connected to the light-receiving element through the transistor, the reduction in charge held in the charge retention node is suppressed by extending the fall time of the input waveform of a driving pulse supplied to the transistor to turn off the transistor.05-31-2012
20120132790ELECTRONIC DEVICE HAVING PROXIMITY DETECTION FUNCTION - An electronic device having proximity detection function includes a front cover, a frame arranged under the front cover, a light emitter and a photo sensor received in the frame. A spacer is arranged between the front cover and the frame to prevent a portion of light from the light emitter from travelling to the photo sensor, when the front cover and the frame are not parallel.05-31-2012
20120211646DEVICE AND METHOD FOR MEASURING LIGHT ENERGY RECEIVED BY AT LEAST ONE PHOTOSITE - A method is for measuring light energy received by a pixel including a transfer transistor, and a photodiode including a charge storage region. The method may include encapsulating the gate of the transfer transistor of the pixel in a semiconductor layer, at least one part of which includes a hydrogenated amorphous semiconductor. The method also may include grounding the charge storage region of the pixel, and determining the drift over time in the magnitude of the drain-source current of the transfer transistor.08-23-2012
20120187281LIGHT SENSOR HAVING TRANSPARENT SUBSTRATE AND THROUGH-SUBSTRATE VIAS - Techniques are described to furnish an IR suppression filter that is formed on a glass substrate to a light sensor. In one or more implementations, a light sensor includes a substrate having a surface. One or more photodetectors are formed in the substrate and configured to detect light and provide a signal in response thereto. An IR suppression filter configured to block infrared light from reaching the surface is formed on a glass substrate. The light sensor also includes a plurality of color pass filters disposed over the surface. The color pass filters are configured to filter visible light to pass light in a limited spectrum of wavelengths to the one or more photodetectors. A buffer layer is disposed over the surface and configured to encapsulate the plurality of color pass filters and adhesion layer. The light sensor further includes through-silicon vias to provide electrical interconnections between different conductive layers.07-26-2012
20120223216STERILIZATION SYSTEM WITH ULTRAVIOLET EMITTER FOR ERADICATING BIOLOGICAL CONTAMINANTS - An exemplary sterilization system includes a self-propelled robotic mobile platform for locating and eradicating infectious bacterial and virus strains on floors (and objects thereon), walls, cabinets, angled structures, etc., using one or more ultraviolet light sources. A controller allows the system to adjust the quantity of ultraviolet light received by a surface by, for example, changing the intensity of energy input to a ultraviolet light source, changing a distance between a ultraviolet light source and a surface being irradiated, changing the speed/movement of the mobile platform to affect time of exposure, and/or by returning to contaminated areas for additional passes. The mobile platform may include a sensor capable of detecting fluorescence of biological contaminants irradiated with ultraviolet light to locate contaminated areas. The system is thus capable of “seek and destroy” functionality by navigating towards contaminated areas and irradiating those areas with ultraviolet light accordingly.09-06-2012
20100193670SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE, METHOD OF DRIVING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS - A solid-state imaging device includes: a substrate; a substrate voltage supply applying a first potential to the substrate during a light receiving period including first and second exposure periods different from each other and applying a second potential to the substrate during a no-light receiving period; and a plurality of pixels each including: a light receiving portion formed on a front surface side of the substrate and generating a signal charge in accordance with received light; a storage capacitor formed adjacent to the light receiving portion so that the signal charge generated in the light receiving portion is transmitted thereto and is stored and held therein when the first potential is applied to the substrate; dark current suppressing portions; an electronic shutter adjusting layer; a reading gate portion; and a vertical transmission register transmitting the signal charge read by the reading gate portion in the vertical direction.08-05-2010
20120256081RECEIVING CIRCUIT - According to a receiving circuit includes a light receiving element, a signal voltage generation portion, a comparator, a reference voltage generation portion and a switch. The light receiving element receives a light signal and outputs a light current corresponding to the light signal. The signal voltage generation portion converts the light current into a signal voltage and outputs the signal voltage. The comparator compares the signal voltage with a first threshold value or a second threshold value. The reference voltage generation portion outputs a reference voltage input to the comparator. The switch changes the reference voltage to one of the first threshold value and the second threshold value based on an output of the comparator.10-11-2012
20110036971PHOTOVOLTAIC DEVICES - A photovoltaic device includes a heterojunction between different semiconductor materials which are present in charge transporting layers. The device can include laterally-arranged electrodes.02-17-2011
20120080584EUV LIGHT SOURCE WITH SUBSYSTEM(S) FOR MAINTAINING LPP DRIVE LASER OUTPUT DURING EUV NON-OUTPUT PERIODS - A device is disclosed herein which may comprise a droplet generator producing droplets of target material; a sensor providing an intercept time signal when a droplet reaches a preselected location; a delay circuit coupled with said sensor, the delay circuit generating a trigger signal delayed from the intercept time signal; a laser source responsive to a trigger signal to produce a laser pulse; and a system controlling said delay circuit to provide a trigger signal delayed from the intercept time by a first delay time to generate a light pulse that is focused on a droplet and a trigger signal delayed from the intercept time by a second delay time to generate a light pulse which is not focused on a droplet.04-05-2012
20120326013LAMINATED CARDS WITH MANUAL INPUT INTERFACES - A laminated card is provided with manual input interfaces. Such manual input interfaces may provide tactile feedback to a user. Laminated cards may be provided as payment cards, identification cards, medical cards, or any other type of card.12-27-2012
20120326012AVALANCHE IMPACT IONIZATION AMPLIFICATION DEVICES - A semiconductor photodetector may provide charge carrier avalanche multiplication at high field regions of a semiconductor material layer. A semiconductor current amplifier may provide current amplification by impact ionization near a high field region. A plurality of metal electrodes are formed on a surface of a semiconductor material layer and electrically biased to produce a non-uniform high electric field in which the high electric field strength accelerates avalanche electron-hole pair generation, which is employed as an effective avalanche multiplication photodetection mechanism or as an avalanche impact ionization current amplification mechanism.12-27-2012
20120138776DETECTION DEVICE COMPRISING A RUGGED TEST CIRCUIT - The detection device comprises a photodetector provided with first and second terminals. A readout circuit has an input coupled to the first terminal of the photodetector. A bias circuit imposes a bias on the terminals of the photodetector. A test circuit delivers a test current to the photodetector. The test circuit comprises a first transistor through which the test current flows. The first transistor presents a first main electrode connected to the input of the readout circuit and configured so as to have a junction diode opposing flow of the charge carriers when the photodetector is short-circuited.06-07-2012
20130009045Self-Aligned Contacts for Photosensitive Detection Devices - A unit cell for use in an imaging system may include a layer of semiconductor material and a contact formed on the layer of semiconductor material. The layer of semiconductor material may have a bandgap such that the layer of semiconductor material absorbs photons of a particular range of wavelengths, transmits photons that are not of the particular range of wavelengths, and generates a photocurrent, referenced to a ground common, in response to the absorbed photons. The layer of semiconductor material may be formed on a substrate that transmits photons incident thereon to the layer of semiconductor material. The contact may be electrically coupled to the layer of semiconductor material such that the photocurrent is conducted from one surface of the contact to an opposing surface of the contact.01-10-2013
20130168535TIME-DELAY INTEGRATION THROUGH REDUCTION OF DELAY BETWEEN SUBSEQUENT CAPTURE OPERATIONS OF A LIGHT-DETECTION DEVICE - Disclosed are a system, a method and an apparatus of reduction of delay between subsequent capture operations of a light-detection device. In one embodiment, a light-detection circuit includes an avalanche photodiode implemented in a deep submicron CMOS technology. In addition, the light-detection circuit includes a passive quench control circuit to create an avalanche current that generates a high voltage at an output of a second inverter gate of the circuit. The light-detection circuit further includes an active quench control circuit to reduce a dead time of the circuit. The light-detection circuit also includes a reset circuit to create a low voltage at an output of the second inverter gate and to create an active reset through a PMOS transistor of the light-detection circuit.07-04-2013
20120248295PHOTODETECTOR - A photodetector disclosed herein comprises an avalanche transistor having a reference junction structure in which temperature characteristics of a current amplification factor are about the same as those of an avalanche photodiode and which is reverse-biased, and a current injection junction structure which injects a reference current to the reference junction structure and which is forward-biased. Voltages to be applied to the avalanche photodiode and the reference junction structure are controlled so that the amplification factor of the reference current amplified in the reference junction structure is retained at a predetermined value, whereby the temperature characteristics of the photodetector utilizing an avalanche effect can be stabilized.10-04-2012
20130134298RADIATION DETECTION DEVICE WITH IMPROVED ILLUMINATION RANGE - A pixel comprises a photodetector and a control circuit. The pixel is provided with an output terminal designed to connect an analysis circuit. The photodetector is configured to have two different operating modes associated with different biasing conditions. A switch connecting the photodetector to the output terminal of the pixel and a circuit for a connecting/disconnecting the control circuit with the output terminal of the pixel and with the photodetector allow to switch between the two operating modes. A comparator compares the voltage across the capacitive load with respect to a threshold value and outputs first and second signals according to the comparison. The comparator is connected to the circuit for connecting/disconnecting the control circuit and to the switch.05-30-2013
20130181119SHARED TIME OF FLIGHT PIXEL - A time of flight pixel includes a photodiode that accumulates charge in response to light incident upon the photodiode. A first transfer transistor is couple between the photodiode and a first charge storage device to selectively transfer charge to the first charge storage device from the photodiode. A second transfer transistor coupled between the photodiode and a second charge storage device to selectively transfer charge to the second charge storage device from the photodiode. An enable transistor is coupled between the first charge storage device and a readout node coupled to the second charge storage device to selectively couple the first charge storage device to the readout node. An amplifier transistor having a gate is also coupled to a readout node.07-18-2013
20110248150DEVICE FOR QUANTIFYING AND LOCATING A LIGHT SIGNAL MODULATED AT A PREDETERMINED FREQUENCY - The invention concerns a device for quantifying and locating a light signal modulated at a predetermined frequency. According to the invention, it comprises a digital control unit (10-13-2011
20100308212DIODE, PHOTODETECTOR CIRCUIT INCLUDING SAME, AND DISPLAY DEVICE - Each of even-numbered photodiodes 12-09-2010
20120273661APPARATUS AND METHOD FOR DECIDING ENTRANCE AND EXIT OF MOVING OBJECTS - Present invention proposes an apparatus and method for deciding entrance and exit of moving objects using two or more transmission units and only one reception unit which are installed on a gateway of a space to be measured. The two or more transmission units comprises a first transmission unit installed on one side surface of a gateway of a space to be measured to emit a first pulse in a first period; a second transmission unit installed in an inside direction of the space on the installation surface of the first transmission unit to emit a second pulse which has the first period and a phase that is different from a phase of the first pulse.11-01-2012
20120273662THREE-DIMENSIONAL COHERENT PLASMONIC NANOWIRE ARRAYS FOR ENHANCEMENT OF OPTICAL PROCESSES - A plasmonic grating sensor having periodic arrays of vertically aligned plasmonic nanopillars, nanowires, or both with an interparticle pitch ranging from λ/8−2λ, where λ is the incident wavelength of light divided by the effective index of refraction of the sample; a coupled-plasmonic array sensor having vertically aligned periodic arrays of plasmonically coupled nanopillars, nanowires, or both with interparticle gaps sufficient to induce overlap between the plasmonic evanescent fields from neighboring nanoparticles, typically requiring edge-to-edge separations of less than 20 nm; and a plasmo-photonic array sensor having a double-resonant, periodic array of vertically aligned subarrays of 1 to 25 plasmonically coupled nanopillars, nanowires, or both where the subarrays are periodically spaced at a pitch on the order of a wavelength of light.11-01-2012
20110233387Light sensor circuit and driving method thereof - Embodiments provide a light sensor circuit for a flat panel display which improves resolution at low luminance and increases the range of sensible ambient light by divisionally driving a frame period, in which light is sensed, into a plurality of sub-frames, and a method of driving the light sensor circuit.09-29-2011
20110233386SINGLE-ELECTRON DETECTION METHOD AND APPARATUS FOR SOLID-STATE INTENSITY IMAGE SENSORS - Embodiments of the present invention include an electron counter with a charge-coupled device (CCD) register configured to transfer electrons to a Geiger-mode avalanche diode (GM-AD) array operably coupled to the output of the CCD register. At high charge levels, a nondestructive amplifier senses the charge at the CCD register output to provide an analog indication of the charge. At low charge levels, noiseless charge splitters or meters divide the charge into single-electron packets, each of which is detected by a GM-AD that provides a digital output indicating whether an electron is present. Example electron counters are particularly well suited for counting photoelectrons generated by large-format, high-speed imaging arrays because they operate with high dynamic range and high sensitivity. As a result, they can be used to image scenes over a wide range of light levels.09-29-2011
20100314531SCINTILLATOR AND DETECTOR ASSEMBLY - A detector comprising a photodetector including a single photon avalanche diode (SPAD), wherein the SPAD comprises a wide band-gap semiconductor material, and a quenching circuit electrically coupled to the photodetector comprising a first device, wherein the first device comprises a wide band-gap semiconductor material having a band-gap of at least about 1.7 eV at about 26° C.12-16-2010
20110272561METHOD OF DETECTING IMPINGING POSITION OF PHOTONS ON A GEIGER-MODE AVALANCHE PHOTODIODE, RELATED GEIGER-MODE AVALANCHE PHOTODIODE AND FABRICATION PROCESS - A Geiger-mode avalanche photodiode may include an anode, a cathode, an output pad electrically insulated from the anode and the cathode, a semiconductor layer having resistive anode and cathode regions, and a metal structure in the semiconductor layer and capacitively coupled to a region from the resistive anode and resistive cathode regions and connected to the output pad. The output pad is for detecting spikes correlated to avalanche events.11-10-2011
20120280114MULTIFUNCTIONAL RADIOMETER, HOSPITAL EQUIPMENT, MULTIUSE MEASUREMENT TOOL, SYSTEM AND METHOD FOR MEASURING IRRADIANCE IN PHOTOTHERAPY - The present invention refers to a multifunctional radiometer having at least onen optical sensor (11-08-2012
20110303829LIGHT SENSOR - The light dose received by perishable goods is an important parameter in determining the lifetime of those goods. A light sensor (12-15-2011
20120018624Photoelectric conversion module - A photoelectric conversion module includes a housing including a first wall and a second wall parallel to each other, a first circuit board and a second circuit board arranged between the first wall and the second wall, a spacer disposed between the first circuit board and the second circuit board, a first dust proofing member for sealing a gap between the first wall and the first circuit board and a gap between the spacer and the first circuit board, and a second dust proofing member for sealing a gap between the second wall and the second circuit board and a gap between the spacer and the second circuit board. The first circuit board includes a first holding portion for holding the first dust proofing member. The second circuit board includes a second holding portion for holding the second dust proofing member.01-26-2012
20120080585PHOTOELECTRIC CONVERSION ELEMENT, PRODUCTION METHOD THEREOF, PHOTOSENSOR, IMAGING DEVICE AND THEIR DRIVING METHOD - To provide a photoelectric conversion element capable of functioning as a photoelectric conversion element when a compound having a specific structure is applied to the photoelectric conversion element, causing the element to exhibit a low dark current, and reducing the range of increase in the dark current even when the element is heat-treated, and an imaging device equipped with such a photoelectric conversion element. A photoelectric conversion element having a photoelectric conversion film which is sandwiched between a transparent electrically conductive film and an electrically conductive film and contains a photoelectric conversion layer and an electron blocking layer, wherein the electron blocking layer contains a compound having, as a substituent, a substituted amino group containing three or more ring structures.04-05-2012
20120085892PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR OPERATING THE SAME - In a photoelectric conversion device including a photodiode and a current mirror circuit, a diode-connected transistor is provided in parallel with the photodiode. The transistor serves as a leakage path for rapidly discharging charge stored in the gate capacitance in the current mirror circuit. Thus, the response speed of the photoelectric conversion device is increased, and output of an abnormal value is reduced.04-12-2012
20120085891SINGLE PHOTON DETECTOR AND PHOTON NUMBER RESOLVING DETECTOR - Provided is a single photon detector and a photon number detector which use an APD and include an auxiliary signal generator, a light receiving element, a mixer, and a determiner The auxiliary signal generator generates an auxiliary signal. The light receiving element receives a photon to output an electric signal. The mixer receives and mixes an output signal of the light receiving element and the auxiliary signal. The determiner determines whether the photon is received or the number of received photons. The single photon detector and photon number resolving detector detect an avalanche of an amplitude less than the amplitude of a capacitive response. A probability that an after pulse is generated can be reduced. A photon count rate is enhanced. The influence on the waveform of the gate signal can be decreased. The frequency of the gate signal can be continuously changed.04-12-2012

Patent applications in class Special photocell