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Plural photosensitive image detecting element arrays

Subclass of:

250 - Radiant energy

250200000 - PHOTOCELLS; CIRCUITS AND APPARATUS

250206000 - Photocell controlled circuit

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DocumentTitleDate
20120199724SEMICONDUCTOR DEVICE, PHYSICAL INFORMATION ACQUIRING APPARATUS, AND SIGNAL READING-OUT METHOD - A semiconductor device includes: an element array portion in which unit elements are disposed in a matrix; and a signal processing portion including a signal processing circuit executing predetermined signal processing based on unit signals outputted from the circuit elements, respectively, every column, in which a function of the signal processing circuit is controlled in such a way that power consumption of the signal processing circuit concerned corresponding to the unit elements each not required becomes lower in a phase of an element selection mode in which only information on a part of the unit pixels for one row in the element array portion is required than in a phase of a normal operation mode.08-09-2012
20130043372Multi-Band Position Sensitive Imaging Arrays - In a method embodiment, a method includes generating one or more first signals proportional to the position and intensity of photons within a first range of wavelengths and incident on a position sensing pixel of an array of position sensing pixels. The method further includes generating one or more second signals proportional to a number of photons within a second range of wavelengths and incident on an image sensing pixel of an array of image sensing pixels. The array of image sensing pixels is formed monolithically on the array of position sensing pixels.02-21-2013
20130043373SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes: a plurality of photoelectric conversion units arranged in rows and columns in a pixel region; a plurality of vertical transfer units arranged for corresponding columns of the photoelectric conversion units, and transfer, in a column direction, the signal charges read from the corresponding columns of the photoelectric conversion units; a first and a second horizontal transfer units arranged in parallel, and transfer, in a row direction, the signal charges transferred by the vertical transfer units; and a first and a second output units which (i) include floating diffusion units each formed in a region adjacent to an output end of a corresponding one of the first and the second horizontal transfer units and (ii) output, as electric signals, the transferred signal charges, wherein the floating diffusion units are disposed at greater intervals than adjacent ones of the horizontal transfer units.02-21-2013
20110180688PHOTOELECTRIC CONVERTER AND PROCESS FOR PRODUCING THE SAME AND SOLID STATE IMAGING DEVICE - A photoelectric converter includes: a lower electrode layer; a compound semiconductor thin film of chalcopyrite structure disposed on the lower electrode layer and having a high-resistivity layer in its surface; a transparent electrode layer disposed on the compound semiconductor thin film; an interlayer insulating layer; a zinc-oxide-based compound semiconductor thin film; and electrodes. With application of a reverse bias voltage between the transparent electrode layer and the lower electrode layer, and application of a bias voltage between the electrodes, the photoelectric converter photoelectrically converts ultraviolet region light. Thus, the photoelectric converter achieves photoelectric conversion of light in a wider region. Such a photoelectric converter and a process for producing the same, and a solid state imaging device to which the photoelectric converter is applied are provided.07-28-2011
20100090092IMAGE PICKUP APPARATUS - An apparatus includes pixels each having a transistor that transfers a charge of a photoelectric conversion unit, an amplification unit that receives the transferred charge, a scanning unit that supplies, to the transistor, a conductive pulse, a non-conductive pulse, and an intermediate-level pulse having a peak value between the conductive pulse and the non-conductive pulse, a generating unit that generates an image signal using a signal based on a charge transferred in response to the conductive and intermediate-level pulses, and a control unit that changes at least one of a pulse width of the intermediate-level pulse and the peak value in accordance with information on the detected temperature. The conductive and intermediate-level pulses are supplied to the transistor during a light shielding period of the photoelectric conversion unit.04-15-2010
20080315073Method and apparatus for setting black level in an imager using both optically black and tied pixels - An imaging pixel array includes an active area of pixels, organized into rows and columns of pixels. The array also includes a plurality of dark pixel columns adjacent to the active area of pixels such that rows of pixels in the active area of pixels extend across the plurality of dark pixel columns. The plurality of dark pixel columns are composed of tied pixels. The array also includes a plurality of dark pixel rows adjacent to the active area of pixels and the plurality of dark pixel columns such that columns of pixels in the active area of pixels extend across the plurality of dark pixel rows. The plurality of dark pixel rows are composed of both optically black pixels and tied pixels on the same row.12-25-2008
20090194672DIGITAL RADIOGRAPHIC IMAGING APPARATUS - A light sensing array has a plurality of electrically isolated photosensors, each photosensor having a first terminal and a second terminal, each of the terminals of each photosensor being isolated from the terminals of the other photosensors, wherein each photosensor responds to an incident light level by producing a charge difference between the first and second terminal. There is a differential circuit selectively coupled to the first and second terminals of one of the photosensors for producing an output signal related to the charge difference between the first and second terminals.08-06-2009
20090194671IMAGE SENSOR REFLECTOR - An array of pixels is formed using a substrate, where each pixel has a substrate having an incident side for receiving incident light, a photosensitive region formed in the substrate, and a reflector having a complex-shaped surface. The reflector is formed in a portion of the substrate that is opposed to the incident side such that light incident on the complex-shaped surface of the reflector is reflected towards the photosensitive region.08-06-2009
20120168608SOLID-STATE IMAGING DEVICE AND DRIVING METHOD OF SOLID-STATE IMAGING DEVICE - A solid-state imaging device of the present invention is capable of thinning signals for each column. The solid-state imaging device includes: photo diodes, a drain into which charges transferred by first column CCDs are swept-off, and transfer control units each of which is provided to the corresponding first column CCDs, and transfers, to a row CCD and to the drain, the charges transferred by the corresponding first column CCDs. Each of the transfer control units includes: a second column CCD which transfers, in a column direction, the charges transferred by the first column CCDs corresponding to the transfer control unit, and a column CCD terminal gate which is provided between the second column CCD and the row CCD, and forms a potential barrier between the second column CCD and the row CCD.07-05-2012
20090001255IMAGER PIXEL WITH CAPACITANCE CIRCUIT FOR BOOSTING RESET VOLTAGE - A pixel cell in which a capacitance is coupled between a storage node and a row select transistor and another capacitance is coupled between a storage node and a voltage supply or ground source potential to boost a reset voltage.01-01-2009
20130075591SOLID-STATE IMAGING DEVICE - A solid-state imaging device according to the present invention includes pixels which are arranged two-dimensionally and each of which includes: a light absorbing layer that converts light into signal charges; a signal read circuit to read out the signal charges, the signal read circuit being formed on a side opposite to a light incident plane side of the light absorbing layer; a metal layer that is formed on the light incident plane side of the light absorbing layer, the metal layer having an aperture to transmit, into the light absorbing layer, light of a wavelength range depending on a shape of the aperture, a driving circuit that applies a voltage to the metal layer to generate, in the light absorbing layer, a potential gradient to collect the signal charges.03-28-2013
20130075593ACTIVE PIXEL SENSORS WITH VARIABLE THRESHOLD RESET - A CMOS image sensor array has rows and columns of active pixels, and column lines in communication with the active pixels in the respective columns. Each active pixel has an output connected to a column line and includes a photodetector that produces a signal proportional to incident light intensity that is coupled to an active pixel output based on column select and row select signals. Each active pixel has a reset transistor for resetting the active pixel, wherein each reset transistor has a first gate terminal and a second gate terminal. The reset transistors have a variable threshold capability that allows increased sensor array dynamic range or mitigation of the effects of temperature or radiation induced transistor threshold voltage shifts. Row select, column select, and sense transistors can also be configured to have variable thresholds.03-28-2013
20130075592Method of Refresh Operation for Flat Panel Radiation Imager - To provide a method of refresh operation for a flat panel radiation imager that makes it possible to carry out a refresh operation in such a way that electric charge that is accumulated in pixels by photoelectric conversion is efficiently released with low power consumption and during a short period of time. Control signals of the refresh operation are turned into a plurality of successive pulses at regular intervals; and timing is adjusted in a way that adjacent switching elements disposed on the same signal line are not turned ON at the same timing.03-28-2013
20130075588SOLID STATE IMAGING DEVICE, METHOD OF CONTROLLING SOLID STATE IMAGING DEVICE, AND PROGRAM FOR CONTROLLING SOLID STATE IMAGING DEVICE - A solid state imaging device includes: a pixel array unit that has a plurality of pixels 2-dimensionally arranged in a matrix and a plurality of signal lines arranged along a column direction; A/D conversion units that are provided corresponding to the respective signal lines and convert an analog signal output from a pixel through the signal line into a digital signal; and a switching unit that switches or converts the analog signal output through each signal line into a digital signal using any of an A/D conversion unit provided corresponding to the signal line through which the analog signal is transmitted, and an A/D conversion unit provided corresponding to a signal line other than the signal line through which the analog signal is transmitted.03-28-2013
20130075586SOLID IMAGING DEVICE AND PORTABLE INFORMATION TERMINAL DEVICE - According to one embodiment, a solid imaging device includes an imaging substrate, a light-shielding member and a AD conversion circuits. The imaging substrate is two-dimensionally arranged with a plurality of pixels. The plurality of pixels have a top face formed with an optoelectronic conversion element for converting incident light into an electric charge and storing it and a back face opposite to the top faces. The imaging substrate is formed with a top face by the top face of the plurality of pixels and formed with a back face by the back face of the plurality of pixels. The light-shielding member is provided on the top face side of the imaging substrate. The AD conversion circuits is formed on the back face of the pixels shielded from the light.03-28-2013
20130075587SOLID STATE IMAGING DEVICE, PORTABLE INFORMATION TERMINAL DEVICE AND METHOD FOR MANUFACTURING SOLID STATE IMAGING DEVICE - According to one embodiment, a solid state imaging device includes a sensor substrate having a plurality of pixels formed on an upper face, a microlens array substrate having a plurality of microlenses formed and a connection post with one end bonded to a region between the microlenses on the microlens array substrate and with the other end bonded to the upper face.03-28-2013
20130075589RAMP WAVE GENERATION CIRCUIT AND SOLID-STATE IMAGING DEVICE - Provided are a ramp wave generation circuit and a solid-state imaging device in which a pulse output unit includes a delay part including a plurality of delay units that delay and output an input signal, and a delay control part that controls a delay time by which the delay unit delays the signal, and outputs a plurality of signals having logic states corresponding to logic states of signals output by the delay units, a time difference between timings at which the logic states of the respective signals are changed being a time corresponding to the delay time.03-28-2013
20130075590IMAGE SENSORS HAVING MULTIPLE ROW-SPECIFIC INTEGRATION TIMES - In various embodiments, reset is suppressed for at least one selected row of pixels in a pixel array during a rolling shutter operation, thereby setting the integration time of the selected row(s) to the full-frame integration time.03-28-2013
20130075581MULTIPLE CLOCKING MODES FOR A CCD IMAGER - A CCD image sensor includes vertical CCD shift registers and gate electrodes disposed over the vertical CCD shift registers. The gate electrodes are divided into distinct groups of gate electrodes. The CCD image sensor is adapted to operate in an accumulation mode and a charge transfer mode, an accumulation mode and a charge shifting mode, or an accumulation mode, a charge transfer mode, and a charge shifting mode. The charge transfer mode has an initial charge transfer phase and a final charge transfer phase. The charge shifting mode has an initial charge shifting phase and a final charge shifting phase.03-28-2013
20130075582MULTIPLE CLOCKING MODES FOR A CCD IMAGER - A CCD image sensor includes vertical CCD shift registers and gate electrodes disposed over the vertical CCD shift registers. The gate electrodes are divided into distinct groups of gate electrodes. The CCD image sensor is adapted to operate in an accumulation mode and a charge transfer mode, an accumulation mode and a charge shifting mode, or an accumulation mode, a charge transfer mode, and a charge shifting mode. The charge transfer mode has an initial charge transfer phase and a final charge transfer phase. The charge shifting mode has an initial charge shifting phase and a final charge shifting phase.03-28-2013
20130075585SOLID IMAGING DEVICE - According to one embodiment, a solid imaging device includes an imaging substrate, an imaging lens, a microlens array substrate and a polarizing plate array substrate. The imaging substrate has a plurality of pixels formed on an upper side thereof. The imaging lens is provided above the imaging substrate. The optical axis in the imaging lens intersects with the upper side of the imaging substrate. The microlens array substrate is provided between the imaging substrate and the imaging lens. A surface in the microlens array substrate has a plurality of microlenses arranged two-dimensionally. The surface of the microlens array intersects with the optical axis. The polarizing plate array substrate is provided between the imaging substrate and the imaging lens. The plurality of kinds of polarizing plates in the polarizing plate array substrate having polarization axes in mutually different directions are arranged two dimensionally.03-28-2013
20130075584IMAGER ROW CONTROL-SIGNAL TESTER - Row-control signal monitoring system for an electronic imager includes signal processing circuitry coupled a pixel array of the electronic imager which receives at least one row control signal from the pixel array and provides an output signal corresponding to the selected row control signal. Monitoring circuitry compares the output signal to a target value to test the at least one row-control signal.03-28-2013
20130075583MULTIPLE CLOCKING MODES FOR A CCD IMAGER - A CCD image sensor includes vertical CCD shift registers and gate electrodes disposed over the vertical CCD shift registers. The gate electrodes are divided into distinct groups of gate electrodes. The CCD image sensor is adapted to operate in an accumulation mode and a charge transfer mode, an accumulation mode and a charge shifting mode, or an accumulation mode, a charge transfer mode, and a charge shifting mode. The charge transfer mode has an initial charge transfer phase and a final charge transfer phase. The charge shifting mode has an initial charge shifting phase and a final charge shifting phase.03-28-2013
20130075580MULTIPLE CLOCKING MODES FOR A CCD IMAGER - A CCD image sensor includes vertical CCD shift registers and gate electrodes disposed over the vertical CCD shift registers. The gate electrodes are divided into distinct groups of gate electrodes. The CCD image sensor is adapted to operate in an accumulation mode and a charge transfer mode, an accumulation mode and a charge shifting mode, or an accumulation mode, a charge transfer mode, and a charge shifting mode. The charge transfer mode has an initial charge transfer phase and a final charge transfer phase. The charge shifting mode has an initial charge shifting phase and a final charge shifting phase.03-28-2013
20080258045SOLID-STATE IMAGING DEVICE, METHOD OF DRIVING SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS - A solid-state imaging device, includes: a pixel array area including an unit pixel having a photoelectric conversion element and a transfer gate; a first supply voltage control means for supplying a first control voltage to a control electrode of the transfer gate; a second supply voltage control means for sequentially supplying one or plural second control voltages having a voltage value different from the first control voltage to the control electrode; a third supply voltage control means for supplying a third control voltage having the same voltage value as the second control voltages once or plural times prior to one or plural supplies of the second control voltages; a first driving means for reading signal charges from the transfer gate when the first control voltage is supplied; and a second driving means for reading signal charges from the transfer gate once and more when the second control voltage is sequentially applied.10-23-2008
20080258042IMAGE SENSOR CIRCUITS AND METHODS WITH MULTIPLE READOUT LINES PER COLUMN OF PIXEL CIRCUITS - An image sensor circuit of various embodiments includes a pixel array with a plurality of pixel circuits arranged in a plurality of rows and a plurality of columns. Each column of the pixel array includes a corresponding first set of pixel circuits connected to output analog pixel signals to a respective first column readout line, and a corresponding second set of pixel circuits connected to output analog pixel signals to a respective second column readout line. Two or more analog-to-digital conversion circuits may be provided for each column of pixel circuits in the pixel array, and two or more rows of pixel circuits in the pixel array may be activated to output analog pixel signals to corresponding column readout lines at a same time.10-23-2008
20110192957System and Method for Extending Dynamic Range for a Detector - A system and method for measuring signals having a wide range of intensity components using detectors adapted for use in biological analysis devices. In certain biological analysis applications, signals emitted by a sample may have intensity components that vary over several orders of magnitude. Measurement of such a signal may yield an acceptable quality for one intensity component at the expense of another component. For example, a detector configured to measure a relatively weak intensity component may cause it to overflow when subjected to a relatively strong intensity component. The detector can be adapted to be operated at different configurations to allow measurements of different components of the signal, and the results can be combined to yield an accurate representation of the signal.08-11-2011
20130037699SOLID-STATE IMAGING DEVICE - The solid-state imaging device 02-14-2013
20130037696IMAGING APPARATUS AND DRIVING METHOD OF THE IMAGING APPARATUS - A driving method of an imaging apparatus comproses: horizontally transferring, by a horizontal scanning circuit, a signal based on a photoelectric conversion portion of a first pixel unit held in a signal holding capacitor to a common line; before ending of the horizontal transfer; applying, by a reset switch of a second pixel unit, a selection reset voltage to a floating diffusion region of the second pixel unit; and after the horizontal transfer, transferring, by a transfer switch of the second pixel unit, a signal of a photoelectric conversion portion of the second pixel unit to the floating diffusion region of the second pixel unit and amplifying, by an amplification transistor of the second pixel unit, a signal of the floating diffusion region of the second pixel unit to output the signal to an output line.02-14-2013
20130037698SOLID-STATE IMAGING APPARATUS, METHOD OF MANUFACTURING SOLID-STATE IMAGING APPARATUS, AND ELECTRONIC APPARATUS - The present technology relates to a solid-state imaging apparatus that can provide a compound-eye system solid-state imaging apparatus capable of capturing an image with high image quality regardless of use environments, a method of manufacturing a solid-state imaging apparatus, and an electronic apparatus. The solid-state imaging apparatus includes photoelectric conversion units (02-14-2013
20130037695IMAGE PICK-UP APPARATUS - An image pick-up apparatus includes a lens module, a base plate and an image sensor. The lens module includes a lens barrel and an optical lens. The optical lens has an optical axis. The base plate has a first surface facing toward the lens module, and an opposite second surface. The base plate has a through hole through the first and second surfaces. The through hole includes a first hole adjacent to the lens module and a second hole away from the lens module. The first hole is in communication with the second hole. The first hole has a first hole portion with a rectangular cross section. Inner surfaces of the first hole portion is inclined relative to the optical axis. An image sensor received in the second hole. The optically effective region of the image sensor has a smaller area than the opening of the first hole.02-14-2013
20130037697RING OSCILLATOR CIRCUIT, A/D CONVERSION CIRCUIT, AND SOLID-STATE IMAGING APPARATUS - A ring oscillator circuit causing a pulse signal to circulate around a circle to which an even number of inverting circuits are connected in a ring, wherein one of the inverting circuits is a first starting inverting circuit, which drives a first pulse signal according to a control signal, another of the inverting circuits is a second starting inverting circuit, which drives a second pulse signal based on a leading edge of the first pulse signal, still another is a third starting inverting circuit, which drives a third pulse signal based on the leading edge of the first pulse signal after the second pulse signal is driven, and the first to third starting inverting circuits are arranged within the circle of the inverting circuits in order of the third, second, and first pulse signals in traveling directions of the pulse signals.02-14-2013
20090272881Apparatus, method, and system providing pixel having increased fill factor - A method, apparatus, and system providing a pixel having increased fill factor by removing the row select transistor. A reset transistor in the pixel is connected to a column line, and the column line is used alternatively as a pixel readout line and as a voltage supply line for resetting a storage region in the pixel through the resent transistor.11-05-2009
20100163711SOLID-STATE IMAGING DEVICE - A solid-state imaging device comprises pixel units, column signal lines, column circuits, a switching unit, and a mode control unit. Pixel units are two-dimensionally disposed in a matrix direction, and each of them comprises a photoelectric conversion unit and an amplifying unit. Column signal lines are provided for each column and the pixel signals from the amplifying units are output to each of rows. Column circuits are provided for each column and process signals from the column signal lines. A switching unit switches connection between the column signal lines and the column circuits. A mode control unit outputs signals to the switching unit and controls switching between a first mode in which the column signal lines are connected to the column circuits on the same column thereof and a second mode in which the column signal lines are connected to the column circuits on another column.07-01-2010
20100163710COMBINATION READER - An imaging system for collecting images of signals associated with a sample tile comprising a stage supporting the sample tile, a ring illuminator system emitting a uniform excitation energy upon an entirety of the sample tile causing at least a first signal to be generated from the sample tile, and an image collecting device collecting a first image of the first signal. The image collecting device further collecting a second image of a second signal emitted from the sample tile, wherein the second signal being different than the first signal.07-01-2010
20100072349RESPONSE-ENHANCED MONOLITHIC-HYBRID PIXEL - A light-sensing pixel is described that includes more than one detector element, each of which is sensitive to a range of wavelengths of the electromagnetic spectrums. The detectors are arranged in a readout circuit that can be constructed on a monolithic semiconductor product such that one or more of the detectors can be switched on or off to include or exclude an output contribution from said detectors and enhance the response of the pixel. Also, the detectors can included a laser-treated semiconductor sensor for efficient sensing of radiation in one or more regions of the spectrum. Arrays and imaging products using such pixels are disclosed.03-25-2010
20100072350ACTIVE PIXEL WITH PRECHARGING CIRCUIT - An active pixel including a precharge circuit for a sample and hold (S/H) stage and methods of operating the same are provided. In addition to the precharge circuit and S/H stage, the pixel may include a sensor circuit to generate a signal in response to electromagnetic radiation received on a photodetector included therein, and a multiplexer circuit. The S/H stage may include a switching-element to couple the signal from the sensor circuit to a capacitor element in the S/H stage to read-out and store the signal. The multiplexer circuit may include a switching-element coupled to an output node of the capacitor element to couple the signal to a column. The precharge circuit may include a switching-element coupled between the output node of the capacitor element and the column to precharge the capacitor element to a fixed voltage applied to the column when the S/H stage is not reading-out the signal.03-25-2010
20130032696RADIATION IMAGE CAPTURING APPARATUS - A radiation image capturing apparatus includes: a detecting section, a scanning drive unit, switch units, reading circuits, and a controller. The controller controls at least the scanning drive unit and the reading circuits and causes the same to execute data readout process from the radiation detection elements. The controller causes the reading circuits to periodically perform a readout operation before radiation image capturing operation in a state where each of the switch units is in an off state by applying the off voltage to all of the scanning lines from the scanning drive unit, causes the reading circuits to repeatedly execute a leaked data readout process in which the electric charges leaked from the radiation detection elements through the switch units are converted into leaked data, and detects initiation of irradiation at a point when the read-out leaked data exceeds a threshold value.02-07-2013
20130032693IMAGE SENSOR - Provided is an image sensor capable of supporting a high speed operation. The image sensor includes a plurality of sampling units sampling a pixel signal to output a sampled signal pair; an auxiliary amplification unit amplifying a signal of the sampled signal pair; and an amplification unit sensing a differential signal pair transmitted through the auxiliary amplification unit to generate output data.02-07-2013
20130032697PIXEL ARCHITECTURE AND METHOD - In accordance with an embodiment, a pixel includes at least two switches, each switch having a control terminal and first and second current carrying terminals. The control terminals of the first and second switches are commonly connected together. In accordance with another embodiment, a method for transferring charge from a first switch to a capacitance includes applying voltage to the commonly connected control terminals of the first and second switches.02-07-2013
20130032695IMAGE PICKUP APPARATUS - An image pickup apparatus includes a pixel generating a signal by photoelectric conversion, a comparator comparing the signal based on the pixel with a reference signal varied with time, a counter performing counting until the comparator outputs a signal indicating that a relationship in magnitude between the signal based on the pixel and the reference signal is reversed, and a control unit. The comparator includes a first amplifier receiving the reference signal at a first input portion and the signal based on the pixel at a second input portion to compare the signal based on the pixel with the reference signal. The control unit sets a bandwidth of the comparator to a first bandwidth when the reference signal varies at a first rate of change and to a second bandwidth when the reference signal varies at a second rate of change.02-07-2013
20130032694IMAGE SENSOR, IMAGING APPARATUS, AND IMAGING METHOD - There is provided an image sensor including a normal pixel group composed of a plurality of normal pixels, each of the normal pixels having a photoelectric conversion device for photoelectrically converting an incident light, and a detection pixel configured to detect a light incident from a neighboring pixel by the photoelectric conversion device within an effective pixel area of the normal pixel group.02-07-2013
20130032692METHOD AND APPARATUS FOR CONTROLLING OUTPUT OF THE SOLID-STATE IMAGER IN A BARCODE READER - A method and apparatus for imaging targets with an imaging reader. The method includes: (1) capturing return light from a target over a field of view of the solid-state imager and generating image data corresponding to the target; (2) transmitting the image data from the solid-state imager to the host when the gate circuit is set to the transmitting mode; and (3) preventing the image data from transmitting to the host when the gate circuit is set to the blocking mode.02-07-2013
20130082165SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS - A solid-state imaging device includes: a first lens layer; and a second lens layer, wherein the second lens layer is formed at least at a periphery of each first microlens formed based on the first lens layer, and the second lens layer present at a central portion of each of the first microlenses is thinner than the second lens layer present at the periphery of the first microlens or no second lens layer is present at the central portion of each of the first microlenses.04-04-2013
20100044553CMOS IMAGE SENSOR PACKAGE AND CAMERA MODULE WITH SAME - An image sensor package includes a cover glass, an image sensor chip, and a reflecting layer. The cover glass includes a first surface and a second surface at opposite sides thereof. The image sensor chip includes a silicon layer formed on the second surface of the cover glass, a plurality of pixel regions formed on a third surface of the silicon layer facing away from the cover glass, and a plurality of bumps formed on the third surface of the silicon layer, the bumps capable of electrically connecting the image sensor chip to a circuit board. The reflecting layer covers the pixel regions of the image sensor chip.02-25-2010
20100044552AUTOMATIC SIMULTANEOUS DUAL GAIN READOUT INTEGRATED CIRCUIT USING THRESHOLD VOLTAGE SHIFTS OF MOSFET BULK TO SOURCE POTENTIAL - The present disclosure is directed to automatic gain switching circuits for implementation with photodetectors that include a switchable storage network including a storage element. The switchable storage network, such as one or more capacitors, is configured and arranged to respond to a photocurrent from the photodetector and provide an increased storage for the circuit at a predetermined photocurrent. The storage elements can include one or more capacitors that can be coupled to integration capacitors of the photodetector. The switchable networks can include flux sensing switches such as MOSFETS that can activate at a desired or predetermined photocurrent level. Related methods of providing multiple gain values for a photodetector circuit, as well as focal plane arrays and imaging systems with automatic gain shifting are also described.02-25-2010
20090184237Photodetector - The present invention aims at providing a photodetector which can detect the incident light intensity with a high speed while having a wide dynamic range for incident light intensity detection. Each photodiode PD07-23-2009
20100102204ACTIVE OPTICAL LIMITING SEMICONDUCTOR DEVICE AND METHODS - An optical switching system comprising an embodiment with a high pass filter operable to eliminate a portion of frequencies present in an image and an optical device operative to receive the spectrally modified image from the high pass filter, alternatively amplify the spectrally modified image, and propagate at least those frequency components in the spectrally modified image exhibiting a frequency less than an absorption frequency of the optical switching device when the optical switching device is active. Alternatively, the optical switching system may transmit an image only when the system is active. The optical switching system may, for example, comprise superluminescent light emitting diodes which may be, for example, formed in the shape of an inverted truncated prism. For human viewing purposes, the operative transmission ranges may closely coincide with the maximum sensitivity of the photopic response of the corresponding red, blue and green cones in human eyes.04-29-2010
20100102206NEAR INFRARED/COLOR IMAGE SENSOR - A near infrared/color photodetector made in a monolithic form in a lightly-doped substrate of a first conductivity type covering a holder and comprising a face on the side opposed to the holder. The photodetector includes at least first and second photodiodes for the storage of electric charges photogenerated in the substrate, the second photodiode being adjacent to said face; and a first region extending at least between the second photodiode and the holder, preventing the passage of said charges between a first substrate portion being located between said region and the holder and a second substrate portion extending between said face and the first region, the first photodiode being adapted to store at least charges photogenerated in the first substrate portion and the second photodiode being adapted to store charges photogenerated in the second substrate portion.04-29-2010
20090159784INTEGRATED CIRCUIT DEVICE AND IMAGING APPARATUS USING INTEGRATED CIRCUIT DEVICE - An integrated circuit device of the present invention includes a plurality of signal processing circuits classified into a plurality of groups, each signal processing circuit including an amplifier circuit for amplifying an input electric signal and a bias circuit having an input terminal connected electrically to a bias source and supplying a bias input terminal of the amplifier circuit with an operation bias for an amplifying operation of the amplifier circuit; and a plurality of connection wirings arranged each for each of the groups separately, such that the input terminals of the bias circuits of the signal processing circuits in one of the groups are commonly connected through the connection wirings. This provides an integrated circuit device suppressing the lowering of an image quality in consideration of enabling lower power consumption, a low noise characteristic, and high integration, and an imaging apparatus using the integrated circuit.06-25-2009
20090159783PHOTOELECTRIC CONVERSION APPARATUS AND IMAGE PICKUP SYSTEM USING THE APPARATUS - A photoelectric conversion apparatus includes a first block line through which an optical signal is output and a second block line through which a noise signal superimposed on the optical signal is output. The photoelectric conversion apparatus also includes a switch used to control a connection between the fist block line and the second block line.06-25-2009
20090159782SOLID-STATE IMAGING DEVICE AND CAMERA - A solid-state imaging device comprises a pixel array; a reference signal generation unit operable to generate a reference signal that changes monotonically for a predetermined period in a horizontal period; a comparator operable to compare the level of a pixel signal with the level of a reference signal; a counter operable to count input clock pulses; a memory operable to store the number of counts counted by the counter as a digital value; and a timing control unit operable to generate a clock that is to be input into the counter, and change frequency of the clock that is to be input into the counter based on external input data.06-25-2009
20090159781Producing Layered Structures With Layers That Transport Charge Carriers - Layered structures such as photosensing arrays include layers in which charge carriers can be transported. For example, a carrier-transporting substructure that includes a solution processing artifact can transport charge carriers that flow to or from it through charge-flow surface parts that are on electrically conductive regions of a circuitry substructure; the circuitry substructure can also have channel surface parts that are on semiconductive channel regions, with a set of the channel regions operating as acceptable switches in an application. Or a first substructure's surface can have carrier-active surface parts on electrode regions and line surface parts on line regions; a second substructure can include a transport layer on carrier-active surface parts and, over it, an electrically conductive layer; to prevent leakage, an open region can be defined in the electrically conductive layer over the line surface part and/or an electrically insulating layer portion can cover the line surface part.06-25-2009
20100108861Multispectral imaging device based on multiple quantum wells - The invention relates to a multispectral imaging device comprising a multiple-quantum-well structure operating on inter-sub-band transitions by absorbing radiation at a wavelength λ lying within a set of wavelengths to which said structure is sensitive, said structure comprising a matrix of individual detection pixels, characterized in that the matrix is organized in subsets (E05-06-2010
20130026347OBSERVATION SYSTEM AND OBSERVATION METHOD - An observation system 01-31-2013
20130026346SAFETY DEVICE FOR A MACHINE IN WHICH A FIRST MACHINE PART PERFORMS A WORKING MOVEMENT WITH RESPECT TO A SECOND MACHINE PART - A safety device for a machine, in which machine a first machine part having a leading edge performs a working movement towards a second machine part, comprises a plurality of optical safety barriers and an evaluation unit. The optical safety barriers move in the working movement simultaneously with the first machine part in such a manner that the safety barriers move in advance of the leading edge at various spaced dispositions. The optical safety barriers span a protective field that has a two-dimensional cross section. The evaluation unit is designed for generating a stop signal to stop the first machine part in dependence upon the optical safety barriers. Towards the end of the working movement, the optical safety barriers are held substantially stationary in the region of the second machine part. The optical safety barriers are deactivated one following the other before they are interrupted by the first machine part.01-31-2013
20130026345SMALL PIXEL FOR IMAGE SENSORS WITH JFET AND VERTICALLY INTEGRATED RESET DIODE - A pixel and a pixel array of an image sensor device of the present invention have small pixel sizes by resetting sensed charge using a diode built vertically above a substrate. The pixel and the pixel array also have low noise performance by using a JFET as a source follower transistor for sensing charge. The pixel includes a floating diffusion node configured to sense photo-generated charge, a reset diode configured to reset the floating diffusion node in response to a reset signal, and a junction field effect transistor configured to output a signal having an output voltage level corresponding to a charge level of the floating diffusion node.01-31-2013
20130026344IMAGING UNIT - An imaging unit includes an image sensor, an imaging optical system which includes a prism that is positioned on the object side of the image sensor, wherein the prism bends an optical path of light emanating from an object to lead the light to the image sensor; a housing which accommodates and supports the image sensor and the prism; a light shield frame, which forms a part of the housing, provided on the object side of an incident surface of the prism, wherein the light shield frame shields a part of the light incident on the incident surface of the prism; and a prism positioning surface which is formed on the housing and contacts the prism to position the prism with respect to the housing.01-31-2013
20130026342IMAGE SENSOR WITH CONTROLLABLE VERTICALLY INTEGRATED PHOTODETECTORS - An image sensor includes front-side and backside photodetectors of a first conductivity type disposed in a substrate layer of the first conductivity type. A front-side pinning layer of a second conductivity type is connected to a first contact. The first contact receives a predetermined potential. A backside pinning layer of the second conductivity type is connected to a second contact. The second contact receives an adjustable and programmable potential.01-31-2013
20130026343SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus comprises a plurality of matrix pixels, a reference signal generator for generating a ramp signal, a counter for performing counting according to the ramp signal output, and an AD converter, arranged for each pixel column, for performing AD conversion by comparing a pixel signal from the pixel with the ramp signal. Further, the AD converter includes a comparator to which the pixel signal and the reference signal are input, a storage for storing the AD conversion result, and an slope converter, between the output terminal of the reference signal generator and the input terminal of the comparator, for changing a gradient of the ramp signal, so that the noise overlaid on the ramp signal changes depending on the gradient of the ramp signal. Thus, it is possible to prevent generation of a horizontal-line noise in the ramp signal.01-31-2013
20130082166IMAGING APPARATUS, IMAGING SYSTEM, AND METHOD FOR CONTROLLING IMAGING APPARATUS - An imaging apparatus includes a detector having a plurality of conversion elements for converting radiation or light into an electric charge, a power supply unit that supplies a first voltage to the conversion element in a first imaging operation, and a control unit that controls the detector and the power supply unit. During a period between the first imaging operation and a second imaging operation, the control unit controls to perform a first inter-imaging operation in which a second voltage different from the first voltage is supplied to the conversion element, and, subsequently to the first inter-imaging operation, a second inter-imaging operation in which a third voltage different from the first and the second voltages is supplied to the conversion element. The absolute value of the difference between the third and the first voltages is smaller than the absolute value of the difference between the second and the first voltages.04-04-2013
20130082164IMAGE SENSOR AND ROW AVERAGING METHOD FOR IMAGE SENSOR - An image sensor and a row averaging method for an image sensor capable of simultaneously selecting the pixels of the same color in the same column of different rows in a pixel array and performing a signal process, thereby preventing an increase in an area and a decrease in the sensing speed of the pixels in the sub-sampling mode and the binning mode of the image sensor.04-04-2013
20130082163IMAGE SENSOR WITH MICRO-LENS COATING - Techniques and architectures for providing a coating for one or more micro-lenses of a pixel array. In an embodiment, a pixel element includes a micro-lens and a coating portion extending over a surface of the micro-lens, where a profile of the coating portion is super-conformal to, or at least conformal to, a profile of the micro-lens. In another embodiment, the coating portion is formed at least in part by orienting the surface of the micro-lens to face generally downward with the direction of gravity, the orienting to allow a fluid coating material to flow for formation of the coating portion.04-04-2013
20090309009PHOTO DETECTOR DEVICE FOR DISPLAY DEVICE - A photo detector device for a display device includes many first conductive lines, many second conductive lines orthogonal to the first conductive lines, many switching transistors, and many photosensitive transistors. Each of the switching transistors includes a drain, a source, and a gate, wherein the sources are electrically connected to the second conductive line, the gates are electrically connected to the first conductive line, and the first conductive lines receive a control signal to control on/off states of the switching transistors. Each of the photosensitive transistors includes a drain, a source, and a gate, wherein the photosensitive transistor sources are electrically connected to the drains of the switching transistors, and the photosensitive transistor gates are connected to and maintained at the potential of the photosensitive transistor drains.12-17-2009
20130087687PHOTOELECTRIC CONVERSION APPARATUS - A photoelectric conversion apparatus includes, on one substrate, a pixel driving unit and a signal processing unit that includes a digital circuit configured to execute signal processing. A first voltage and a second voltage different in value from the first voltage are supplied to the digital circuit of the pixel driving unit. A third voltage and a fourth voltage different in value from the third voltage are supplied to the digital circuit of the signal processing unit. A main portion of a first conductor that supplies the first voltage to the digital circuit of the pixel driving unit and a main portion of a second conductor that supplies the third voltage to the digital circuit of the signal processing unit are isolated from each other.04-11-2013
20130087688RAMP SIGNAL OUTPUT CIRCUIT, ANALOG-TO-DIGITAL CONVERSION CIRCUIT, IMAGING DEVICE, METHOD FOR DRIVING RAMP SIGNAL OUTPUT CIRCUIT, METHOD FOR DRIVING ANALOG-TO-DIGITAL CONVERSION CIRCUIT, AND METHOD FOR DRIVING IMAGING DEVICE - A circuit configured to output a ramp signal having a potential varying depending on time includes a voltage supply unit configured to supply a plurality of voltages having different amplitudes, a current supply unit, an integration circuit configured to output the ramp signal, and a capacitive element. The voltage supply unit is connected to one terminal of the capacitive element. The integration circuit and the current supply unit are connected to another terminal of the capacitive element.04-11-2013
20130087685SOLID-STATE IMAGING APPARATUS - An imaging apparatus includes a plurality of unit pixels arranged in a matrix and configured to generate a signal by photoelectric conversion, a plurality of pixel output lines connected to each column of the unit pixels, a plurality of column amplifiers configured to amplify a signal of the pixel output lines, and a driving circuit configured to generate a control signal of the column amplifiers. Each of the column amplifiers includes first and second input terminals, an output terminal, an input capacitance between the first and second input terminals, and a first switch between the second input and output terminals. The driving circuit is configured to generate the control signal so as to make a period for switching the first switch from a conductive state to a non-conductive state longer than a period for switching the first switch from the non-conductive state to the conductive state.04-11-2013
20130087684LASER DAYLIGHT DESIGNATION AND POINTING - A laser designator system using modulated CW laser diodes and a conventional high pixel count image sensor array, such as CCD or CMOS array. These two technologies, diode lasers and imaging sensor arrays are reliable, widely used and inexpensive technologies, as compared with prior art pulsed laser systems. These systems are distinguished from the prior art systems in that they filter the laser signal spatially, by collecting light over a comparatively long period of time from a very few pixels out of the entire field of view of the image sensor array. This is in contrast to the prior art systems where the laser signal is filtered temporarily, over a very short time span, but over a large fraction of the field of view. By spatially filtering the signal outputs of the individual pixels, it becomes possible to subtract the background illumination from the illuminated laser spot.04-11-2013
20130087686SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus includes a plurality of pixels arrayed in a matrix, and configured to generate signals by photoelectric conversion; a plurality of read-out circuits disposed on each column of the plurality of pixels arrayed in a matrix pattern, and configured to read out the signals from the plurality of pixels; a plurality of comparison units configured to compare the signals output from the plurality of read-out circuits with a reference signal whose level changes with time; a counter configured to count a clock signal after the level of the reference signal starts a change; a storage unit configured, when a magnitude relationship between the signals output from the plurality of the read-out circuits and the reference signal is reversed; and a reset unit configured to reset the count value stored in the storage unit.04-11-2013
20130087683MULTIPLE-ROW CONCURRENT READOUT SCHEME FOR HIGH-SPEED CMOS IMAGE SENSOR WITH BACKSIDE ILLUMINATION - A system, method and apparatus implementing a multiple-row concurrent readout scheme for high-speed CMOS image sensor with backside illumination are described herein. In one embodiment, the method of operating an image sensor starts acquiring image data within a color pixel array and the image data from a first set of multiple rows in the color pixel array is then concurrently readout. Concurrently reading out the image data from the first set of multiple rows includes concurrently selecting a first portion of the image data from the first set by first readout circuitry and a second portion of the image data from the first set by second readout circuitry. The first and second portions of the image data from the first set are different and the first and second readout circuitries are also different. Other embodiments are also described.04-11-2013
20090045320Method, apparatus and system for a low power imager device - A method, apparatus and system providing an imaging device in which a bias current supplied to one or more imaging device circuits is adjusted in accordance with a frequency of a pixel clock signal.02-19-2009
20090045319Optical Sensor, Solid-State Imaging Device, and Operating Method of Solid-State Imaging Device - In an optical device such as an optical sensor or a solid-state imaging device having a photodiode for receiving light and producing photocharges and a transfer transistor (or an overflow gate) for transferring the photocharge, it is configured that photocharges overflowing from the photodiode in storage operation are stored into a plurality of storage capacitance elements through the transfer transistor or the overflow gate, thereby obtaining the optical device adapted to maintain a high sensitivity and a high S/N ratio and having a wide dynamic range.02-19-2009
20090045323Automatic Headlamp Control System - A vehicular imaging system includes a forward facing photosensor array and a control responsive to the photosensor array. The control processes an image data set indicative of captured images, and the control processes a reduced image data set of the image data set to determine whether an object of interest is within a target zone of the captured image. The reduced image data set is representative of a portion of the captured images as captured by a particular grouping of the photosensor elements. The control adjusts the reduced image data set so as to be representative of a portion of the captured images as captured by a different particular grouping of the photosensor elements, and adjusts the reduced image data set in response to a determination of a change in a focus of expansion of the captured images.02-19-2009
20100006743PHOTOELECTRIC CONVERSION APPARATUS, IMAGING SYSTEM, AND PHOTOELECTRIC CONVERSION APPARATUS MANUFACTURING METHOD - A photoelectric conversion apparatus having a pixel array region and a peripheral region includes a pixel array, a readout unit, an output unit, a plurality of output lines, and a color filter layer which is arranged in the pixel array region and the peripheral region and includes a color filter arranged above the plurality of pixels. The color filter layer extends to surround the output lines when viewed from a direction perpendicular to a surface of a semiconductor substrate, and has an opening arranged above the plurality of output lines. The opening of the color filter layer is filled with gas or an insulator lower in dielectric constant than the color filter.01-14-2010
20100327148CMOS Image Sensors Formed of Logic Bipolar Transistors - An integrated circuit structure includes an image sensor cell, which further includes a photo transistor configured to sense light and to generate a current from the light.12-30-2010
20130048833COLOR IMAGING ELEMENT - A single-plate color imaging element including color filters in a predetermined color filter array arranged on a plurality of pixels formed by photoelectric conversion elements arranged in horizontal and vertical directions, wherein in the color filter array, the first filters are vertically and horizontally arranged across a filter at a center of a 3×3 pixel group, and the 3×3 pixel group is repeatedly arranged in the horizontal and vertical directions.02-28-2013
20130048831MULTILEVEL RESET VOLTAGE FOR MULTI-CONVERSION GAIN IMAGE SENSOR - A method of operating an image sensor includes adjusting a capacitance coupled to a circuit node within a pixel cell. The circuit node is coupled to selectively receive an image charge acquired by a photo-sensor of the pixel cell. A conversion gain is selected from multiple conversion gains for the pixel cell by adjusting the capacitance. A voltage level from multiple voltage levels is selected for use as a reset signal when the reset signal is asserted. The reset signal controls resetting of the circuit node during operation of the pixel cell. The voltage level is selected dependent upon which of the multiple conversion gains is selected by adjusting the capacitance. The reset signal is asserted to reset a voltage at the circuit node.02-28-2013
20130048832CMOS IMAGING DEVICE WITH THREE-DIMENSIONAL ARCHITECTURE - An imaging device including: plural pixels each including a photodetector; plural reading circuits associated with the plural photodetectors, each reading circuit including a first MOS transistor charging/discharging a photodetector and a second MOS transistor converting charges to be output by the photodetector into voltage; an electronic processing circuit configured to process the voltages outputted by the reading circuits; a first substrate on which are formed the pixels and the reading circuits, and a second substrate, distinct from the first substrate, on which is formed the electronic processing circuit, the second substrate being linked electrically to the first substrate by an electrical interconnection forming an electrical link between the reading circuits and the electronic processing circuit.02-28-2013
20090302203IMAGING DEVICE - An imaging device suitable for detecting certain imaging particles and recording the detection of imaging particles, and as such can include certain recording devices such as a charge storage structure.12-10-2009
20090302202SOLID-STATE IMAGE PICKUP DEVICE - There is provided a solid-state image pickup device that has a plurality of scanning lines that extends in a predetermined direction, a plurality of data lines that extends in a direction for intersecting the scanning lines, and a plurality of bias lines within an image pickup area on a substrate. For each of a plurality of pixels disposed in positions corresponding to intersections of the plurality of scanning lines and the plurality of data lines, a field effect transistor that is controlled by the scanning line and a photoelectric conversion element that has a electrode electrically connected to the data line through the field effect transistor and a electrode electrically connected to the bias line are formed, and a constant electric potential line for electrostatic protection is formed on the substrate. For each of bias lines, a bias line electrostatic protection circuit having a protection diode.12-10-2009
20120217380SOLID-STATE IMAGE SENSING DEVICE, METHOD FOR READING SIGNAL OF SOLID-STATE IMAGE SENSING DEVICE, AND IMAGE PICKUP APPARATUS - An image sensor including a pixel array having vertical signal lines, each interconnected to one of columns of the pixel array, and a column processor including a unit readout circuit provided for each of sets of a predetermined number of columns. The unit readout circuit includes input switches, each connected to a corresponding one of the vertical signal lines and being sequentially turned on and off, an input capacitor having one end commonly connected to the input switches, a reference switch for selectively providing a reference voltage to the input capacitor, an operational amplifier connected to the other end of the input capacitor, a reset switch for selectively providing a short-circuit between input and output ends of the operational amplifier, and a feedback circuit provided for each of the columns and including a feedback switch and a feedback capacitor connected in series between the two ends of the operational amplifier.08-30-2012
20120217379SOLID-STATE IMAGING APPARATUS AND IMAGING SYSTEM - A solid-state imaging apparatus includes a reference signal generating circuit for supplying, commonly to the plurality of A/D conversion circuits, at least two reference signals of which signal levels change toward different directions of electric potential, and the A/D conversion circuit includes an amplifier; an input capacitor having one terminal receiving the analog signal and the reference signal supplied from the reference signal generating circuit, and the other terminal connected to one input terminal of the amplifier; a feedback capacitor connected between the one input terminal and an output terminal of the amplifier; a comparator for comparing, with a comparing level, an output from the output terminal of the amplifier; and a connection capacitor having one terminal connected to the output terminal of the amplifier, and the other terminal connected to one input terminal of the comparator.08-30-2012
20120217378SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus includes a plurality of pixels for converting analog image signals from the pixels into digital signals including a higher digit bit and a lower digit bit in time series. The A/D converter includes a first holding unit for holding the higher digit bit of the digital signal, a second holding unit for holding the lower digit bit of the digital signal, a third holding unit for holding the digital signal from the first holding unit, and a fourth holding unit for holding the digital signal from the second holding unit. A first pair including the first and third holding units, and a second pair including the second and fourth holding units are arranged in a direction along the column of the two-dimensional array of pixels.08-30-2012
20120217376IMAGING SIGNAL PROCESSING METHODS AND APPARATUS - Methods and apparatus are provided for performing multiple correlated double sampling (CDS) operations on an imaging pixel, and in some cases on an array of imaging pixels, during a single integration cycle of the pixel(s). The multiple CDS operations may produce multiple CDS values, which may be processed in combination to produce a resulting value substantially free of various types of noise. The CDS operations may be performed using a CDS circuit including a single-ended charge amplifier having an input capacitor. The charge amplifier may also include a variable capacitance providing a variable gain. The variable capacitance may be provided by a feedback capacitor.08-30-2012
20120217375FIBER LASERS FOR PRODUCING AMPLIFIED LASER PULSES WITH REDUCED NON-LINEARITY - The present application discloses techniques and devices comprising fiber-based chirped fiber Bragg grating for compressing amplified laser pulses.08-30-2012
20120217374SOLID-STATE IMAGING DEVICE, ELECTRONIC EQUIPMENT, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SOLID-STATE IMAGING DEVICE - Disclosed herein is a solid-state imaging device including: a sensor element having a plurality of pixels each having a photoelectric conversion section; and a logic element attached to the sensor element in such a manner as to be stacked on the sensor element face-to-face and provided with a pad electrode. In a stacked body of the sensor and logic elements, a pad opening is provided above the top surface of the pad electrode facing the sensor element, and a pad periphery guard ring is provided to surround the side portion of the pad opening. The pad periphery guard ring is formed by integrally filling, on the side of the pad opening, an entire trench that is at least as deep as the pad opening with a metal material.08-30-2012
20100090094Solid-state detector - In a solid-state detector including a plurality of linear electrodes for outputting signals that are arranged parallel to each other, a wireless signal processing unit that processes wireless signals received by at least one of the plurality of linear electrodes for outputting signals and that extracts data superposed on the wireless signals is connected to the at least one of the plurality of linear electrodes for outputting signals in such a manner that connection/disconnection to the at least one of the plurality of linear electrodes for outputting signals is switchable.04-15-2010
20130161486IMAGING DEVICE - An imaging device includes: a plurality of first pixels, each including a photodiode and in-pixel transistors and having a light-blocking metal film blocking part of light entering the respective first pixels; and a plurality of second pixels, each including a photodiode and in-pixel transistors and having no light-blocking metal film; and each of the photodiodes included in the first pixels or the second pixels is surrounded with a metal frame.06-27-2013
20130161487SOLID-STATE IMAGE PICKUP DEVICE, IMAGE PICKUP DEVICE, AND SIGNAL READING METHOD - A solid-state image pickup device according to one embodiment of the present invention includes: a first substrate including first pixels arranged in a matrix; and a second substrate electrically coupled to the first substrate and including second pixels arranged in a matrix. The first pixel including a photoelectric conversion element configured to generate a color signal corresponding to an m-th color is the first pixel corresponding to the m-th color where m is an integer equal to one of 1 to n. The second pixel including the signal storing circuit configured to store the color signal corresponding to the m-th color is the second pixel corresponding to the m-th color. At least two second pixels of the second pixels corresponding to the same color are arranged in the same column on the second substrate.06-27-2013
20130161488SOLID-STATE IMAGING DEVICE AND IMAGING DEVICE - A solid-state imaging device includes a plurality of AD conversion units respectively provided in a plurality of columns and each configured to convert a pixel signal converted by unit pixels provided in an associated column into digital data of N bits, and a plurality of data storage units respectively provided in the columns. The data storage units each include N flip-flop circuits. The solid-state imaging device further includes data switching units each configured to switch between a first state in which the digital data converted by the AD conversion unit is stored in the data storage unit of the associated column, and a second state in which the N flip-flop circuits in each of the data storage units are serially connected.06-27-2013
20130161489DISPLAY DEVICE CONTROL BASED ON INTEGRATED AMBIENT LIGHT DETECTION AND LIGHTING SOURCE CHARACTERISTICS - Systems and methods are provided for a display device including one or more methods for modifying the display brightness by automatically adapting to ambient lighting conditions.06-27-2013
20130161490PHOTOELECTRIC CONVERSION ELEMENT, DEFECT INSPECTING APPARATUS, AND DEFECT INSPECTING METHOD - Provided are a photoelectric conversion element, wherein the processing speed can be increased and resolution can be changed without increasing cost, and a defect inspecting apparatus and a defect inspecting method using the photoelectric conversion element. A photoelectric conversion element having a plurality of sensor pixels has a multiplexer and a plurality of horizontal transfer registers. Sensor pixels are divided into a plurality of blocks such that the sensor pixels correspond to each of the horizontal transfer registers. The photoelectric conversion element is configured such that charges of the blocks are read by means of the multiplexer via respective corresponding horizontal transfer registers, and are outputted via the multiplexer.06-27-2013
20130056618DRIVING DEVICE AND SPATIAL INFORMATION DETECTING DEVICE USING THE SAME - The driving device includes an applied voltage control unit configured to perform a transfer process of controlling a charge-coupled device to transfer electric charges. The applied voltage control unit is configured to switch, in order from a first end to a second end of a line of transfer electrodes of the charge-coupled device, a voltage applied to the transfer electrode from a control voltage for forming a potential well to a reference voltage for eliminating the potential well. The applied voltage control unit includes a control circuit configured to generate a driving signal based on a clock signal, and a driving circuit configured to apply the control voltage and the reference voltage selectively to the transfer electrode in accordance with the driving signal. The control circuit is configured to delay a second driving signal defined by the driving signal associated with one of the adjacent transfer electrodes from a first driving signal defined by the driving signal associated with the other of the adjacent transfer electrodes so as to adjust a phase difference between the first driving signal and the second driving signal to a value corresponding to predetermined time shorter than a period of the clock signal.03-07-2013
20130056617IMAGER WITH VARIABLE AREA COLOR FILTER ARRAY AND PIXEL ELEMENTS - A color pixel array includes a plurality of micropixels. Each micropixel includes a photosensitive element and a filter element optically aligned with the photosensitive element such that incident light passes through the filter element prior to reaching the photosensitive element. The micropixels are organized into triangular macropixels that each includes multiple micropixels. A perimeter shape of each of the triangular macropixels forms a triangle. The triangular macropixels have a repeating pattern across the color pixel array.03-07-2013
20130056616IMAGE SENSOR, LIGHT QUANTITY MEASUREMENT METHOD, AND MICROSCOPE SYSTEM - An image sensor includes an effective pixel region formed of a pixel group which is irradiated with light, and an optical black region formed of a pixel group which is shielded from light. In the image sensor, when the image sensor is used for a light quantity measurement, the effective pixel region is sectioned into a measurement region used for the light quantity measurement and a light shielding region which is used for a calculation of a value of one of an offset component and a noise component and is shielded from light.03-07-2013
20120112043Semiconductor image sensor array device, apparatus comprising such a device and method for operating such device - A plural line CMOS sensor array device is provided with sensor cells arranged in a matrix of coordinate-wise rows and columns Each cell comprises a photosensitive area, an output node, and a transfer gate for selectively interconnecting the photo-sensitive area and the output node. Along at least a first coordinate direction adjacent cells are functionally configured as mutually mirror-symmetric structures in that their proximate output nodes are facing each other and are arranged for separately feeding a respective output channel.05-10-2012
20120112041METHOD AND SYSTEM FOR AN IMAGE SENSOR CAPABLE OF PERFORMING SELECTIVE ANALOG BINNING OPERATION - Provided is an image sensor including a plurality of sampling units, a plurality of signal lines connected to an amplification unit; and a plurality of first switches positioned between the plurality of sampling units and the plurality of signal lines, connecting a plurality of sampling units to the plurality of signal lines when performing analog binning operation, and connecting one of the plurality of sampling units to one of the signal lines when performing a general operation.05-10-2012
20120112040IMAGE SENSOR - There is provided an image sensor, including an input control unit configured to control signal paths between a plurality of pixels and a plurality of sampling units and supplying outputs from the plurality of pixels in row units to the plurality of sampling units during a normal operation, while supplying the outputs from the plurality of pixels by color, to the plurality of sampling units during a binning operation; and an output control unit configured to control signal paths between the plurality of sampling units and an amplification unit and sequentially supplying outputs from the plurality of sampling units to the amplification unit during the normal operation while simultaneously supplying the outputs from the plurality of sampling units to the amplification unit during the binning operation.05-10-2012
20120112039IMAGE SENSOR - An image sensor with a small circuit area is provided. In the image sensor, a TX decoder which generates transfer signals TX<3:0> includes a latch circuit. The latch circuit is set when a corresponding row group is selected and when a set signal is set to an “H” level, and is reset when a reset signal is set to an “L” level. The latch circuit serves also as a voltage level shift circuit which converts the “H” level of a signal from a first power supply voltage into a second power supply voltage. Therefore, plural row groups can be selected by setting plural latch circuits. It is not necessary to provide a voltage level shift circuit separately.05-10-2012
20120112038METHOD AND SYSTEM FOR ACTIVE IMAGING WITH A LARGE FIELD - The present disclosure relates to an imaging system comprising an impulsion light source for an input light beam oriented toward an observed area and an optoelectronic sensor having a photosensitive surface with a visibility capable of substantially covering the observed area. An impulsion of the incident light beam is backscattered by only by a portion of the observed area into a backscattered spot on the photosensitive surface. A deflection device deflects the impulsions of the incident light beam onto the respective portions of the observed area. A device acquires the thumbnail images corresponding to the backscattered spots resulting in impulsions of the incident light beam. The system combines said thumbnail images to produce an image having a sufficiently high signal-to-noise ratio for portions of interest of the observed area. a high spatial resolution, and a greater insensitivity to motion blurs.05-10-2012
20130056619SOLID-STATE IMAGE PICKUP APPARATUS AND DRIVE METHOD THEREFOR - A solid-state image pickup apparatus of the present invention includes a plurality of pixels arranged in a matrix. For the convenience sake, among the plurality of pixels, two pixels from which signals are not read in parallel are set to be a first pixel and a second pixel. A first reset transistor is disposed in an electrical path between a first reset power supply line and the control electrode of an amplifying transistor contained in the first pixel. A second reset transistor is disposed in an electrical path between the control electrode of the amplifying transistor contained in the first pixel and the control electrode of an amplifying transistor contained in the second pixel. A third reset transistor is disposed in an electrical path between the control electrode of the amplifying transistor contained in the second pixel and a second reset power supply line.03-07-2013
20120305752SOLID-STATE IMAGING DEVICE, AND IMAGING DEVICE - A solid-state imaging device includes: a column comparison circuit which compares a pixel signal with ramp waves and detects a timing at which the pixel signal and the ramp waves match; a counter circuit which is disposed for each of the pixel columns and measures the timing in the column comparison circuit by being supplied with a clock signal; and M first inverters which are equidistantly connected in series, wherein the counter circuit belongs to one of M groups corresponding to each of the M first inverters disposed in the upper clock stage, the odd-numbered group has second inverters disposed between the output terminal of the first inverter corresponding to the group and the counter circuit of the group, and the even-numbered group has buffers disposed between the output terminal of the first inverter corresponding to the group and the counter circuit of the group.12-06-2012
20090065681SOLID-STATE IMAGE PICKUP DEVICE, ELECTRONIC APPARATUS USING SUCH SOLID-STATE IMAGE PICKUP DEVICE AND METHOD OF MANUFACTURING SOLID-STATE IMAGE PICKUP DEVICE - A back-illuminated type solid-state image pickup device (03-12-2009
20090266975IMAGE SENSOR AND IMAGE SENSING APPARATUS - An image sensor comprises a photoelectric conversion unit; a transfer transistor which has a gate electrode; a multilayer wiring structure which defines an aperture region above the photoelectric conversion unit; and a waveguide which guides light entering the aperture region to the light receiving surface, wherein the multilayer wiring structure includes a first wiring layer which is an uppermost wiring layer and defines two contour sides of the aperture region in a first direction, and a second wiring layer which is arranged between the gate electrode and the first wiring layer in a direction perpendicular to the light receiving surface, and defines two contour sides of the aperture region in a second direction, and wherein the gate electrode is arranged to overlap part of the light receiving surface and have a longitudinal direction along the first direction.10-29-2009
20090266974WAVELENGTH-SENSITIVE DETECTOR WITH ELONGATE NANOSTRUCTURES - A wavelength-sensitive detector is provided that is based on elongate nanostructures, e.g. nanowires. The elongate nanostructures are parallel with respect to a common substrate and they are grouped in at least first and second units of a plurality of parallel elongate nanostructures. The elongate nanostructures are positioned in between a first and second electrode, the first and second electrodes lying respectively in a first and second plane substantially perpendicular to the plane of substrate, whereby all elongate nanostructures in a same photoconductor unit are contacted by the same two electrodes. Circuitry is added to read out electrical signals from the photoconductor units. The electronic density of states of the elongate nanostructures in each unit is different, because the material, of which the elongate nanostructures are made, is different or because the diameter of the elongate nanostructures is different. Each unit of elongate nanostructures therefore gives a different response to incident photons such that wavelength-specific information can be derived with the device.10-29-2009
20130062504SEMICONDUCTOR DEVICE, SOLID-STATE IMAGING DEVICE, AND CAMERA SYSTEM - Disclosed herein is a solid state imaging device including a support substrate; an imaging semiconductor chip having a pixel array disposed on the support substrate; and an image processing semiconductor chip disposed on the support substrate, wherein the imaging semiconductor chip and the image processing semiconductor chip are connected by through-vias, and interconnects formed on the support substrate.03-14-2013
20130062505SOLID-STATE IMAGE PICKUP DEVICE, IMAGE PICKUP APPARATUS, AND DRIVING METHOD - A solid-state image pickup device which is configured not to require transfer of signal charges between pixels performs TDI. An output control section 03-14-2013
20130062503SOLID-STATE IMAGING APPARATUS AND METHOD FOR DRIVING SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus includes: a ramp signal generator for generating first and second time-changing ramp signals during first and second analog-to-digital conversion periods, respectively; comparators for comparing a reset signal of a pixel with the first ramp signal during the first analog-to-digital conversion period, and comparing a pixel signal with the second ramp signal during the second analog-to-digital conversion period; and memories for storing, as first and second digital data, count values of counting from a start of changing the first and second ramp signals until an inversion of outputs of the comparators, during the first and second analog-to-digital conversion periods, wherein the ramp signal generator supplies a current from a current generator to a first capacitor element by a sampling and holding operation of a switch, and generates the first and second ramp signals based on the same bias voltage held by the first capacitor element.03-14-2013
20110012011Color filter array, image sensor including the same, and electronic device including the color filter array - A color filter array is provided. The color filter array includes a plurality of basic filter blocks arranged in all directions. Each of the basic filter blocks include one or more color filters. The color filters include a first type color filter that passes through all light without filtering it or has a higher light transmittance than a second type color filter, a third type color filter, and a fourth type color filter. The second through fourth color filters being a red, green or blue filter. Accordingly, the color filter array increases sensitivity to incident light or increases brightness of outgoing light.01-20-2011
20090236497CONVEX LENSLET ARRAY DIFFUSER - An illuminator system comprising an illuminator array positioned adjacent to an image bearing surface, the illuminator array comprising a plurality of discrete illuminator elements spaced in a linear arrangement, the illuminating elements each being configured to emit a light beam for transmission to the image bearing surface at an incidence angle; a light diffuser comprising a plurality of rounded lenslets having convex or concave configuration positioned between the illuminator array and the image bearing surface, the rounded lenslets being positioned with respect to the illuminator array to receive the light beams emitted by the illuminator elements and to diffuse the light beams being transmitted to the image bearing surface in the linear direction of the illuminator array; and a linear sensor array comprising a plurality of sensors positioned adjacent to the image bearing surface such that the light beams reflecting off the image bearing surface at a reflectance angle are received by the sensors.09-24-2009
20130068932PHOTOSENSITIVE DEVICES AND METHODS AND CIRCUITS FOR READING THE SAME - The present application relates to a photosensitive device as well as a reading method and a reading circuit thereof. The photosensitive device comprises a pixel array and a read circuit, wherein a transfer gate for connecting adjacent pixels and transferring charge between the connected pixels is arranged among at least some designated pixels in the pixel array, the read circuit is used for reading charge of a pixel in the pixel array, said charge is at least one of self-charge of said pixel, charge transferred from an adjacent pixel of said pixel, superposition of the self-charge of said pixel and the charge transferred from one or more pixels adjacent to said pixel, and superposition of the transfer charges of two or more pixels adjacent to said pixel.03-21-2013
20130068930A/D CONVERTER AND SOLID-STATE IMAGING APPARATUS - Provided is an A/D converter including an input terminal, a reference signal line for supplying a reference signal which changes temporally, a comparator, a correction capacitor connected to an inverting input terminal of the comparator; and an output circuit which outputs digital data corresponding to an analog signal input to the input terminal. In a first state in which a total voltage of a first analog signal and an offset voltage of the comparator is held in the correction capacitor, a second analog signal input to the input terminal is supplied to a non-inverting input terminal of the comparator, and the second analog signal or the total voltage is changed using the reference signal, thereby outputting, from the output circuit, digital data.03-21-2013
20130068929STACKED-CHIP IMAGING SYSTEMS - Imaging systems may be provided with stacked-chip image sensors. A stacked-chip image sensor may include a vertical chip stack that includes an array of image pixels, analog control circuitry and storage and processing circuitry. The array of image pixels, the analog control circuitry, and the storage and processing circuitry may be formed on separate, stacked semiconductor substrates or may be formed in a vertical stack on a common semiconductor substrate. The image pixel array may be coupled to the control circuitry using vertical metal interconnects. The control circuitry may route pixel control signals and readout image data signals over the vertical metal interconnects. The control circuitry may provide digital image data to the storage and processing circuitry over additional vertical conductive interconnects coupled between the control circuitry and the storage and processing circuitry. The storage and processing circuitry may be configured to store and/or process the digital image data.03-21-2013
20130068931A/D CONVERTER, A/D CONVERSION METHOD, SOLID-STATE IMAGING ELEMENT AND CAMERA SYSTEM - A solid-state imaging device having an analog-digital converter, and an analog-digital conversion method are described herein. An example of a solid-state imaging device includes a bit inconsistency prevention section configured to prevent bit inconsistency between output of a low-level bit latch section and a high-level bit counting section.03-21-2013
20090050787PHOTOELECTRIC CONVERSION APPARATUS AND IMAGE PICKUP SYSTEM USING PHOTOELECTRIC CONVERSION APPARATUS - A photoelectric conversion apparatus includes a photoelectric conversion area in which a plurality of photoelectric conversion elements are arranged to convert incident light into electric charges, a plurality of amplifying units are arranged to read and supply signals based on the electric charges of corresponding photoelectric conversion elements to output lines, a plurality of transfer units are arranged to transfer the electric charges of the corresponding photoelectric conversion elements to input units for corresponding amplifying units, and a plurality of voltage supply units are arranged to supply to corresponding input units voltages for setting the corresponding input units to have first and second potentials are disposed two-dimensionally, and a plurality of voltage supply control units are arranged to supply a voltage to corresponding voltage supply units of the plurality of voltage supply units.02-26-2009
20130214130IMAGING DEVICE AND IMAGING APPARATUS - An imaging apparatus includes an imaging device which includes a plurality of pixels and is operable to generate image information for each pixel from received light. Each of the plurality of pixels includes one of first to fourth color filters. Each of the first to the fourth color filters has different spectral characteristics. The fourth color filter has the highest light transmittance among the color filters. The first to the fourth color filters are arranged in a specific array. The specific array has first to third centroids which make a Bayer array.08-22-2013
20130214131METHOD FOR DRIVING PHOTOELECTRIC CONVERSION APPARATUS - In a photoelectric conversion apparatus including a plurality of pixels arranged in a matrix, each of the pixels including a photoelectric conversion unit, a first holding unit configured to hold electric charge, a second holding unit configured to hold electric charge, a first transfer unit configured to connect the photoelectric conversion unit and the first holding unit, a second transfer unit configured to connect the first holding unit and the second holding unit, and a third transfer unit configured to connect the photoelectric conversion unit and a power supply, a first operation mode and a second operation mode are selectively executed.08-22-2013
20130214132MEDIUM SENSING APPARATUS AND FINANCIAL DEVICE - Provided is a medium sensing apparatus. The medium sensing apparatus comprises a first frame disposed on a transfer path of a medium, the first frame having a plurality of first sensor grooves, a second frame facing the first frame, the second frame having a plurality of second sensor grooves, a plurality of first contact image sensors disposed in the plurality of first sensor grooves, respectively, and a plurality of second contact image sensors disposed in the plurality of second sensor grooves, respectively. At least one of the plurality of first sensor grooves and at least one of the plurality of second sensor grooves are disposed to partially overlap with each other.08-22-2013
20130214125METHOD AND APPARATUS FOR AMBIENT LIGHT DETECTION - Electronic devices may be provided with image sensors. Image sensors may be configured to capture images during imaging operations and monitor ambient light levels during non-imaging operations. An image sensor may include image pixels that receive light and dark pixels that are prevented from receiving light. An image sensor may include an ambient light detection circuit. The ambient light detection circuit may include an oscillator, timing and control circuitry, and a counter. The oscillator may be switchably coupled to the image pixels and the dark pixels. The counter may be configured to count up oscillator cycles of the oscillator while the oscillator is coupled to the image pixels and to count down oscillator cycles of the oscillator while the oscillator is coupled to the dark pixels. The counter may provide a count value that depends on a signal from the image pixels and a signal from the dark pixels.08-22-2013
20130214126IMAGE PICKUP APPARATUS - An image pickup apparatus includes a plurality of pixels each including a photoelectric conversion unit, an amplification element configured to amplify a signal based on a signal charge generated in the photoelectric conversion unit, and a first signal holding unit and a second signal holding unit located at a stage following the first signal holding unit and arranged on an electric path between the photoelectric conversion unit and an input node of the amplification element, in which a coverage by a light-shielding member of the first signal holding unit is lower than a coverage by a light-shielding member of the second signal holding unit.08-22-2013
20130214127PHOTOELECTRIC CONVERSION APPARATUS, METHOD FOR DRIVING THE SAME, AND PHOTOELECTRIC CONVERSION SYSTEM - A photoelectric conversion apparatus includes a pixel array configured to include a first analog-to-digital conversion unit and a second analog-to-digital conversion unit, a first electrical signal supply unit configured to supply an electrical signal to the first analog-to-digital conversion unit, and a second electrical signal supply unit configured to supply an electrical signal to the second analog-to-digital conversion unit.08-22-2013
20130214128IMAGING APPARATUS - An imaging apparatus includes: a plurality of pixels each including a photoelectric conversion unit, and an amplification element to amplify signals based on signal charges generated by the photoelectric conversion unit, in which the plurality of pixels output signals for performing a phase contrast detection type of focal point detection; and a signal holding unit in an electrical pathway between an output node of the photoelectric conversion unit and an input node of the amplification element, in which signals for performing the phase contrast detection type of focal point detection are held.08-22-2013
20130214129IMAGE PICKUP APPARATUS, IMAGE PICKUP SYSTEM, AND IMAGE PICKUP APPARATUS DRIVING METHOD - Each of multiple pixels includes a photoelectric conversion unit. A first holding unit is configured to hold a charge generated by the photoelectric conversion unit, at a location different from location of the photoelectric conversion unit. A second holding unit is configured to hold a charge held by the first holding unit at a location different from locations of both of the first holding unit and the photoelectric conversion unit. An amplifying unit includes an input node different from the second holding unit and is configured to output a signal based on a charge transferred to the input node from the second holding unit. A first discharge unit includes a charge draining node which is electrically connected to a line where a predetermined voltage is supplied. The first discharge unit discharges a charge held by the first holding unit to the charge draining node.08-22-2013
20090008532Image Sensor and Camera Module - An image sensor able to capture an image with a suitable dynamic range even in a case where a bright/dark difference within an imaging range is large is provided. An image sensor 01-08-2009
20090008531Integrated electrooptic system - An integrated circuit includes at least one photosensitive element capable of delivering an electrical signal when light of at least one wavelength of the visible spectrum reaches it, and an electrooptic system functioning as an electrochemical shutter. The electrooptic system is located in the path of at least one light ray capable of reaching the photosensitive element and possesses at least one optical property, dependent on electrochemical reaction, that can be modified by an electrical control signal. The optical property is preferably transmission.01-08-2009
20120235022SOLID-STATE IMAGING DEVICE, DRIVE METHOD OF SOLID-STATE IMAGING DEVICE, AND IMAGING APPARATUS - A solid-state imaging device that includes: a pixel array section configured by an array of a unit pixel, including an optoelectronic conversion section that subjects an incoming light to optoelectronic conversion and stores therein a signal charge, a transfer transistor that transfers the signal charge stored in the optoelectronic conversion section, a charge-voltage conversion section that converts the signal charge provided by the transfer transistor into a signal voltage, and a reset transistor that resets a potential of the charge-voltage conversion section; and voltage setting means for setting a voltage of a well of the charge-voltage conversion section to be negative.09-20-2012
20120235021SOLID-STATE IMAGING DEVICE, IMAGING APPARATUS, ELECTRONIC APPLIANCE, AND METHOD OF DRIVING THE SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes: a device portion in which unit constituent elements, each of which includes a charge detection unit detecting a charge that is generated on the basis of changes in physical information and a transfer unit transferring a signal charge detected by the charge detection unit, are arranged in a predetermined direction; and a supplied voltage control portion capable of transferring a part of the charge detected by the charge detection unit through supplying of a control voltage for suppressing blooming to the transfer unit and capable of transferring the signal charge detected by the charge detection unit through supplying of a first control voltage that is different from the control voltage for suppressing the blooming to the transfer unit.09-20-2012
20120235020CLOCK GATED POWER SAVING SHIFT REGISTER - A gated-clock shift register including a series of clocked flip-flops with preceding outputs connected to subsequent inputs as a horizontal digital shift register. Each flip-flop (or other state holding device) includes a clock buffer between the respective flip-flop's clock, and the global clock. Each clock buffer propagates the clock signal when it determines the associated flip-flop will have a state change during that clock cycle (e.g., via an XOR of the flip-flops input and output signals). In the absence of a state change, that buffer does not propagate the clock signal, essentially only clocking the relevant flip-flops. Further, the clock buffer may be implemented with only NMOS devices (or alternatively, only PMOS devices), which offers power savings over an otherwise required CMOS implementation.09-20-2012
20130161485Image Sensor and Methods of Driving and Fabricating the Same - An image sensor includes a plurality of pixels, wherein each of the pixels includes a storage unit configured to electrically connect with a floating diffusion region and store photocharges therein, and a selector configured to selectively connect and disconnect the storage unit to and from the floating diffusion region in accordance with selection signals. The storage unit includes a capacitive element electrically connected to the floating diffusion region. The selector includes a switching element for selecting the pixel for connection to the floating diffusion region. The switching element is operated by the selection signals to selectively drive the capacitive element.06-27-2013
20130206961SOLID-STATE IMAGE SENSING DEVICE - An image sensor comprises plural sets of a unit pixel outputting a pixel signal based on an electric charge generated through photoelectric conversion and a conversion unit converting the pixel signal into a digital signal. A reference signal source generates reference signals and supplies the generated reference signals to the conversion unit through signal lines. The conversion unit of each set comprises a comparator which compares the level of the reference signal with that of the pixel signal, a count circuit which counts a clock based on the comparison processing, a selection circuit which selects, among the signal lines, a signal line to be selectively connected to the input of the comparator, and a switch which selectively connects the selected signal line to the input of the comparator, and selectively connects a load to an unselected one of the signal lines.08-15-2013
20100051785IMAGE SENSOR WITH PRISMATIC DE-MULTIPLEXING - An image sensor includes a first imaging pixel for a first color having a photosensitive region disposed within a substrate of the image sensor and a second imaging pixel for a second color that is different from the first color having a photosensitive region disposed within the substrate. A refraction element disposed adjacent to the substrate, so that the refraction element refracts light of the first color to the photosensitive region of the first imaging pixel and refracts light of the second color to the photosensitive region of the second imaging pixel.03-04-2010
20110278436IMAGE SENSOR WITH BACKSIDE PASSIVATION AND METAL LAYER - An image sensor includes a semiconductor layer that filters light of different wavelengths. For example, the semiconductor layer absorbs photons of shorter wavelengths and passes more photons of longer wavelengths such that the longer wavelength photons often pass through without being absorbed. An imaging pixel having a photodiode is formed near a front side of the semiconductor layer. A dopant layer is formed below the photodiode near a back side of the semiconductor layer. A mirror that primarily reflects photons of longer visible wavelengths is disposed on the back side of the semiconductor layer.11-17-2011
201101148213D CCD-Style Imaging Sensor with Rolling Readout - The presented readout structure provides charge transport based readout of a photosensitive device with a minimum number of transport gates. The structure uses the given charge storage buckets of the photosensitive device, separated by a minimum sized barrier-gate, to transport the charge out of the pixel field. This new readout schema allows for a fast readout speed based on a 2 phase transport chain and increases the pixel's optical fill factor by significantly reducing the transport gate size compared to state-of-the-art pixels using a 3 or 4 phase CCD readout chain. This readout structure can be exploited for standard photo-detecting elements such as e.g. pinned photo-diodes or any enhanced pixel structure that has additional intelligence incorporated as well. Typical applications are 2D- or 3D-imaging. The process used for manufacturing a sensor with such a readout scheme requires preferably charge transport mechanisms like charge-coupled gate devices as well as the possibility of integrating circuitries of high density. The exploitation of such a combination of process-related features results in a new sensor readout technique that allows for optimizing the pixel's dynamic range and optical fill factor.05-19-2011
20090072121DEVICE FOR DETECTING AN ELECTROMAGNETIC RADIATION WITH CURRENT LIMITATION - This device for detecting an electromagnetic radiation, comprises a matrix of juxtaposed elementary sensors (03-19-2009
20110297814SOLID-STATE IMAGE SENSOR - A solid-state image sensor has a pixel, a vertical signal line, and a control unit. The pixel has a photoelectric conversion part, a charge-voltage conversion part, a transfer transistor, an amplifying transistor, a selection transistor which selects whether or not to output a signal, and a reset transistor which resets a charge of the charge-voltage conversion part. The charge-voltage conversion part is connected to the amplifying transistor and the reset transistor by connection wiring. To the vertical signal line, a signal output from the amplifying transistor is transmitted. The control unit controls the reset transistor and the selection transistor so that the selection transistor is in the on state when the reset transistor changes from the on state to the off state during the reset period in which a charge of the photoelectric conversion part is reset.12-08-2011
20100171024OPTICAL FILTER - An optical filter 07-08-2010
20110155893SOLID-STATE IMAGE PICKUP APPARATUS AND IMAGE PICKUP SYSTEM - An apparatus according to the present invention in which a first substrate including a photoelectric conversion element and a gate electrode of a transistor, and a second substrate including a peripheral circuit portion are placed upon each other. The first substrate does not include a high-melting-metal compound layer, and the second substrate includes a high-melting-metal compound layer.06-30-2011
20100006744PHOTOELECTRIC CONVERSION DEVICE, MULTICHIP MODULE TYPE IMAGE SENSOR, CONTACT IMAGE SENSOR, AND IMAGE SCANNER - The invention provides a photoelectric conversion device, in which a decrease in sensitivity and a crosstalk between wirings are suppressed. Plural pixel columns are arranged in one direction, plural pixels are arranged in a different direction to the one direction in a column manner in the pixel column, and the pixel includes a photodiode PD, a reset transistor M01-14-2010
20120006972COLUMN CIRCUIT AND PIXEL BINNING CIRCUIT FOR IMAGE SENSOR - A column circuit for an image sensor includes a first column read circuit configured to read data of a first column line, and a second column read circuit configured to read data of a second column line, wherein, during a binning mode, data from two or more pixels are outputted through the first column line and stored in the first column read circuit in a first phase, data from two or more pixels are outputted through the second column line and stored in the second column read circuit in a second phase, and charges are shared between the first column read circuit and the second column read circuit in a third phase.01-12-2012
20110284723Semiconductor nano-wire antenna solar cells and detectors - Patterning planar photo-absorbing materials into arrays of nanowires is demonstrated as a method for increasing the total photon absorption in a given thickness of absorbing material. Such a method can provide faster, cheaper, and more efficient photo-detectors and solar cells. A thin nanowire can absorb many more photons than expected from the size of the nanowire. The reason for this effect is that such nanowires support cylindrical particle resonances which can collect photons from an area larger than the physical cross-section of the wire. These resonances are sometimes referred to as Mie resonances or Leaky Mode Resonances (LMRs). The nanowires can have various cross section shapes, such as square, circle, rectangle, triangle, etc.11-24-2011
20110284724Method and Apparatus for Non-line-of-sight Imaging - A system and method for obtaining an image of an object out of line of sight, the method comprising directing a chaotic light beam at a first area containing the object; measuring the light from the chaotic light beam at a plurality of instances in time; using a photon detector, detecting light from a second area over a plurality of instances in time; the photon detector not being in the line of sight with the first area but in line-of-sight with a second area; using a processor, correlating the information received by the photon detector with the measurement of light from the chaotic light beam at specific instances in time; and producing an image of the object. The system for imaging information comprising a spatial receiver, a chaotic photon light source for producing light; the light comprising a first beam adapted to be directed at a first predetermined area containing an object, and a second beam which is received by the spatial receiver and measured at specific intervals in time; at least one processor operatively connected to the spatial receiver, the spatial receiver operating to transmit spatial information correlated to specific intervals of time to the processor; and a first receiver operatively connected to the at least one processor and operative to detect the influence of the object on the first portion of the light beam; the first receiver not being in the line of sight with the first predetermined area and adapted to detect light from a second predetermined area spaced from and coplanar with the first predetermined area, the at least one processor operating to correlate the outputs of the first receiver with spatial information derived from the spatial receiver at correlating intervals of time to create an image of the object.11-24-2011
20110284722Light-sensing circuit, method of operating the light-sensing circuit, and light-sensing apparatus employing the light-sensing circuit - Example embodiments are directed to a light-sensing circuit, a method of operating the light-sensing circuit, and a light-sensing apparatus including the light-sensing circuit. The light-sensing circuit includes a light-sensitive oxide semiconductor transistor that senses light; and a switching transistor connected to the light-sensing transistor in series and configured to output data. During a standby time, a low voltage is applied to the switching transistor and a high voltage is applied to the light-sensitive oxide semiconductor transistor, and when data is output, the high voltage is applied to the switching transistor and the low voltage is applied to the light-sensitive oxide semiconductor transistor.11-24-2011
20120104229TEMPERATURE SENSOR AND IMAGE SENSOR HAVING THE SAME - A temperature sensor includes a band gap reference (BGR) circuit, a voltage generation unit and a digital CDS circuit. The band gap reference (BGR) circuit generates a reference voltage proportional to a temperature. The voltage generation unit generates a first voltage and a second voltage based on the reference voltage, where the first voltage and the second voltage are proportional to the temperature. The digital CDS circuit generates a digital signal corresponding to the temperature by performing a digital correlated double sampling (CDS) operation on the first voltage and the second voltage. The temperature sensor is able to detect a temperature accurately.05-03-2012
20110290985PHOTOELECTRONIC CONVERSION DEVICE - A photoelectric conversion device may include a pixel array including a plurality of two-dimensionally arranged pixels, and a plurality of analog-to-digital converters (ADCs). Each ADC may include a pulse delay circuit including a plurality of connected delay unit stages, each of which delays a pulse signal during a delay time corresponding to a magnitude of a voltage of the pixel signal read from the pixel array, an encoder unit that outputs a digital value based on the number of stages of the delay units through which the pulse signal has passed during a predetermined time, and a correction unit that corrects the digital value output by the encoder unit by a rate corresponding to the number of stages of the delay units through which the pulse signal has passed during a predetermined period.12-01-2011
20120286142ELECTROMAGNETIC SHIELDING COATING AND LENS MODULE UTILIZING THE SAME - An electromagnetic shielding coating covers a lens coated with an optical coating. A light shielding coating covers the optical coating. The electromagnetic shielding coating covers the light shielding coating. The electromagnetic shielding coating includes a first metal layer containing stainless steel and covering the light shielding coating directly, a second copper layer formed on the first metal layer, and a third metal layer formed on the second copper layer. The third metal layer includes stainless steel and copper.11-15-2012
20110290983CMOS IMAGER WITH COMPANDED COLUMN SIGNALS - A non-linear conversion capability within an on-chip, per-column analog-to-digital converter (ADC) is provided to expand a compressed analog signal such that the resulting digital output that has a predetermined (linear or non-linear) mapping with respect to input brightness level of an incoming light signal to a row of pixels. The predetermined mapping may also be provided by a non-linear amplifier coupled to a linear or non-linear ADC and a resulting compressed non-linear digital representation at the output of the ADC is substantially linearized by an on-chip or an off-chip look-up table (LUT).12-01-2011
20110290984INTEGRATED CIRCUIT ARRAY, AND IN PARTICULAR A LARGE-SIZED IMAGE SENSOR - The invention relates notably to large-sized image sensors or image sensors with a large number of rows. Each column of pixels is organized in P superposed blocks. A row decoder organized as P identical decoders selects one row out of M in each of the P blocks. Each block is linked to one respective column conductor out of P column conductors. P read circuits CL12-01-2011
20110290982OPTICAL FILTER SUITABLE FOR DEALING WITH A RADIATION OF VARIABLE INCIDENCE AND DETECTOR INCLUDING SAID FILTER - An optical filter for filtering an electromagnetic radiation of variable angle of incidence, includes a stack of at least one dielectric or semi-conductor layer arranged between two partially reflective layers, said stack defining a set of Fabry-Pérot cavities set to a predetermined wavelength. The average refractive index of the dielectric or semi-conductor layer is variable in a plane orthogonal to the direction of the stack so as to compensate the effects of the variation in the angle of incidence of the electromagnetic radiation on the transmission spectrum of the cavities.12-01-2011
20090278031Solid-state imaging device and imaging apparatus - There is provided a solid-state imaging device, including: a semiconductor substrate having a plurality of pixels, each having a photoelectric conversion portion, formed therein; and a laminated film formed on said semiconductor substrate; wherein said laminated film includes a hydrogen desorbing film for desorbing hydrogen, and a hydrogen blocking-off film disposed so as to overlie said hydrogen desorbing film.11-12-2009
20090321613Differential Source Follower Source Leader Addressable Node Readout Circuit - A readout circuit for reading from addressable nodes comprises first and second half-circuits of a differential amplifier. The first half-circuit comprises at least one source follower transistor adapted to receive an input signal from one of the addressable nodes, such as pixel readouts of an imaging system. The first half-circuit further comprises a row selector switch coupled to the source follower transistor to selectively activate the source follower transistor to receive the input signal. The second half-circuit comprises an output node for providing an output signal of a readout of a selected addressable node. The second half-circuit further comprises a source leader transistor coupled to the output node to provide a feedback signal based on the readout. A feedback loop is connected to the source leader transistor to provide feedback from the output node for utilization in a differential amplification of the input signal.12-31-2009
20100270459Image Sensors with Photo-Current Mode and Solar Cell Operation - A photo-current mode of operation is disclosed for Full Frame CCDs, and Frame-Transfer CCDs, that is suitable for electrical power generation, when not in operation for image sensing, and for Interline-Transfer CCDs, that is suitable for image sensing, and also suitable electrical power generation, when not in operation for image sensing. Further, CMOS Image Sensors (CIS), including 1T Passive Pixels, or 1T Avalanche Photo-Diode Pixels, in which all pass transistors in the matrix are turned ON simultaneously thereby allowing the photo-current produced by each photo-diode in each pixel to flow towards the periphery where suitable circuitry will handle the photo-current for electrical power generation and/or storage. Also, CMOS Image Sensors (CIS), including any Active Pixel Sensor (APS) design, such as the 3T, or 3T Log, or 4T, or 5T, wherein each column-parallel VDD line connecting the Reset Transistors, or the Log Transistors, in a single column of pixels, to column-parallel circuitry at the edge of the pixel matrix, is connected through multiple pass transistors, to different column-parallel blocks of circuitry that are selected alternatively, and that include (1) a VDD voltage source for standard image sensing operation, (2) a block of circuitry suitable to handle photo-current signals for image sensing purposes, and (3) a block of circuitry that is suitable to handle photo-current for electrical power generation and/or storage purposes.10-28-2010
20090008533RADIATION IMAGING APPARATUS AND RADIATION IMAGING SYSTEM - A radiation imaging apparatus has a pixel region arranged on a substrate. Arranged in a matrix pattern in the pixel region are pixels, each pixel including a conversion element which converts radiation to electrical charges, and a switching element which is connected to the conversion element therein. The radiation imaging apparatus has, in a region outside the pixel region of the substrate, an intersection at which a signal line connected to the switching element and a bias line connected to the conversion element intersects. At the intersection, a semiconductor layer is arranged between the signal line and the bias line, and a carrier blocking portion is arranged between the semiconductor layer and the signal line.01-08-2009
20120097841SOLID-STATE IMAGING APPARATUS, IMAGING SYSTEM, AND DRIVE METHOD OF SOLID-STATE IMAGING APPARATUS - In a solid-state imaging apparatus, if the total read out time of all pixels is shortened when effective pixels are thinned out without thinning out OB pixels, then the rows have different reset time periods, and the problem of uneven charge accumulation time periods arises. An improvement by the present invention is that, if no signals are read out from a part of the rows in an effective pixel region to skip the rows, then the time period in which the rows to be skipped are selected is made shorter than that in which the rows from which signals are read out are selected, and the pixels in the optical black pixel region and those in the effective pixel region are driven by the drive pulses of patterns different from each other.04-26-2012
20120097840ANALOG-TO-DIGITAL CONVERTER AND IMAGE SENSOR INCLUDING SAME - An analog-to-digital converter (ADC) within an image sensor includes a comparator comparing a ramp signal with an image signal, and a counter generating a count result in response to the comparison by counting a clock during a counting interval. The ADC determines whether a first counting interval for the counter is less than a reference interval, and if the first counting interval is less than the reference interval the counting interval is a first counting interval, else the counting interval is a second counting interval.04-26-2012
20120097839ANALOG-TO-DIGITAL CONVERTER AND IMAGE SENSOR INCLUDING THE SAME - An analog-to-digital converter includes a modulation unit and a digital signal generation unit. The modulation unit is disposed corresponding to at least one column line, and sequentially perform delta-sigma modulation on an analog input signal and at least one residue voltage to generate digital bit stream signals. The analog input signal is input through the at least one column line. The at least one residue voltage is generated by performing the delta-sigma modulation on the analog input signal. The digital signal generation unit generates a digital signal corresponding to the analog input signal based on the digital bit stream signals.04-26-2012
20120097838IMAGING DEVICE IN PARTICULAR OF THE CMOS TIME DELAY AND INTEGRATION TYPE - An imaging device may be formed in a semiconductor substrate including a matrix array of photosites extending in a first direction and a second direction. The imaging device may include a transfer module configured to transfer charge in the first direction and an extraction module configured to extract charge in the second direction.04-26-2012
20100032549MULTI-CHIP PHOTOSENSOR WITH INDEPENDENTLY ADJUSTABLE INTEGRATION TIMES FOR EACH CHIP - A photosensitive apparatus, such as a scanner used in a digital copier, includes a plurality of photosensor chips. Each photosensor chip comprises a first set of photosensors, and a control portion for accepting an external integration signal, the signal causing an integration time for the set of photosensors. A signal adjustor is associated with the control portion, and effectively alters the external integration signal to cause the control portion to cause a modified integration time for the first set of photosensors. The system enables adjustments of integration times among chips within an apparatus sharing a common control line.02-11-2010
20100032550IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME - Disclosed are embodiments of an image sensor and a method of manufacturing the same. The image sensor includes an insulating layer on a substrate, and a graded-index microlens in the insulating layer corresponding to each pixel of the image sensor.02-11-2010
20110204208PHOTOELECTRIC CONVERSION DEVICE, IMAGING DEVICE, METHOD FOR MANUFACTURING IMAGING DEVICE, AND IMAGING APPARATUS - An organic photoelectric conversion device having: a first electrode; a second electrode opposing to the first electrode; and an organic material-containing photoelectric conversion layer provided between the first electrode and the second electrode, wherein an electron spin number of the photoelectric conversion layer is not more than 1.0×1008-25-2011
20120025062HYBRID ANALOG-TO-DIGITAL CONVERTER, AN IMAGE SENSOR AND A METHOD FOR PROVIDING A PLURALITY OF DIGITAL SIGNALS - A hybrid analog-to-digital converter includes a plurality of converting circuits. Each converting circuit is configured to provide a digital signal based on an analog input signal by performing a successive approximation conversion to obtain, as a result of the successive approximation conversion, a first number of bits of the digital signal, and by subsequently performing a slope conversion based on a common variable reference voltage to obtain a second number of bits of the digital signal, the second number of bits corresponding to a residual between the analog input signal and the result of the successive approximation conversion. The hybrid analog-to-digital converter further includes a common variable reference voltage provider configured to provide to each converting circuit of the plurality of converting circuits the common variable reference voltage.02-02-2012
20120025059Solid-state imaging device and method of manufacturing the same, and imaging apparatus - A solid-state imaging device includes: a semiconductor substrate provided with an effective pixel region including a light receiving section that photoelectrically converts incident light; an interconnection layer that is provided at a plane side opposite to the light receiving plane of the semiconductor substrate; a first groove portion that is provided between adjacent light receiving sections and is formed at a predetermined depth from the light receiving plane side of the semiconductor substrate; and an insulating material that is embedded in at least a part of the first groove portion.02-02-2012
20090189055Image sensor and fabrication method thereof - Embodiments disclose an image sensor device, comprising a substrate comprising a plurality of photosensor cells located therein or thereon, a plurality of optical guide structures corresponding to the photosensor cells respectively, and a stacked layer surrounding the optical guide structures, comprising a plurality of top portions with sharp corners adjacent to the top edges of the optical guide structures.07-30-2009
20090189056COLOR IMAGE SENSOR - The present invention is based on the principle of depth of penetration of electromagnetic rays. In the case of semiconductor mono-crystalline materials, such as silicon, the depth of penetration of a light ray is proportional to its wavelength. Using this phenomenon, the present invention consists of a pixel having three electrodes that can discriminate between the colors red, green, and blue, and thereby reconstruct a color image.07-30-2009
20090127438IMAGE SENSOR WITH MULTIPLE INTEGRATION PERIODS - A method of reading voltages from an image sensor having an array of pixels, each pixel having at least one photodiode connectable to a storage node, the method having: controlling each pixel in a row of pixels to transfer charge accumulated in the photodiode above a first threshold to the storage node at the start and end of a first integration period and reading a first voltage at the storage node of each pixel in the row at the end of the first integration period; controlling of the pixels in the row to transfer charge accumulated in the photodiode above a second threshold to the storage node at the start and end of a second integration period longer than the first integration period, and reading a second voltage value at the storage node of each pixel in the row at the end of the second integration period; controlling each pixel in a row of pixels to transfer charge accumulated in the photodiode to the storage node at the end of a third integration period longer than the first and second integration periods; comparing for each pixel in the row, the first voltage values with a reference voltage; and based on the comparison, for each pixel in the row, performing one of: determining a pixel output value based on the first and/or second voltage values; and reading a third voltage value at the end of the third integration period, and determining a pixel output value based on the second and/or third voltage values.05-21-2009
20100078544INCREASING READOUT SPEED IN CMOS APS SENSORS THROUGH BLOCK READOUT - A method and associated architecture for dividing column readout circuitry in an active pixel sensor in a manner which reduces the parasitic capacitance on the readout line. In a preferred implementation, column readout circuits are grouped in blocks and provided with block signaling. Accordingly, only column output circuits in a selected block significantly impart a parasitic capacitance effect on shared column readout lines. Block signaling allows increasing pixel readout rate while maintaining a constant frame rate for utility in large format high-speed imaging applications.04-01-2010
20090084939IMAGE CAPTURE DEVICE AND RECORDING MEDIUM - A digital camera includes: an image capture data creation unit; a CPU for directing the image capture data creation unit to perform image captures several times and acquire a plurality of image capture data; and an image processing device that determines whether or not a common specific image region exists in a plurality of image capture data acquired by the CPU and, in the case where it is determined that a specific image region exists, performs a pixel additive synthesis for image data of the specific image region and creates image data.04-02-2009
20090084937Solid state imaging device - A solid-state imaging device 04-02-2009
20110168871OPTICAL DETECTOR FOR A PARTICLE SORTING SYSTEM - An optical system for acquiring fast spectra from spatially channel arrays includes a light source for producing a light beam that passes through the microfluidic chip or the channel to be monitored, one or more lenses or optical fibers for capturing the light from the light source after interaction with the particles or chemicals in the microfluidic channels, and one or more detectors. The detectors, which may include light amplifying elements, detect each light signal and transducer the light signal into an electronic signal. The electronic signals, each representing the intensity of an optical signal, pass from each detector to an electronic data acquisition system for analysis. The light amplifying element or elements may comprise an array of phototubes, a multianode phototube, or a multichannel plate based image intensifier coupled to an array of photodiode detectors.07-14-2011
20090095883Photodetection device and method - The photo-detecting device includes a photodetector for detecting incident light, an input J FET for reading the sensing signal from the photodetector, an amplifier for amplifying the signal detected by the input J FET, a feed-back circuit for feeding the output of the amplifier back to the gate of the input J FET through a feed-back capacitor, a reset circuit for resetting the feed-back capacitor by discharging it with a reset MOS FET, and a circuit of a switch and resistor. The same level voltage as the gate voltage of the input J FET is applied to its source through a resistor, and the circuit of the switch and the resistor is connected between the source of the reset MOS FET and the feed-back capacitor. The reset MOS FET and switch are controlled so that the reset MOS FET is turned “on” and “off” while the switch is “on”.04-16-2009
20110108706SEMICONDUCTOR DEVICE AND OPERATING METHOD THEREOF - A solid-state image sensor which holds a potential for a long time and includes a thin film transistor with stable electrical characteristics is provided. A reset transistor is omitted by initializing the signal charge storage portion to a cathode potential of a photoelectric conversion element portion in the solid-state image sensor. When a thin film transistor which includes an oxide semiconductor layer and has an off-state current of 1×1005-12-2011
20110266417DIGITAL DOUBLE SAMPLING METHOD, A RELATED CMOS IMAGE SENSOR, AND A DIGITAL CAMERA COMPRISING THE CMOS IMAGE SENSOR - A digital double sampling method, a related complementary metal oxide semiconductor (CMOS) image sensor, and a digital camera comprising the CMOS image sensor are disclosed. The method includes generating first digital data corresponding to an initial voltage level apparent in a pixel in response to a reset signal, inverting the first digital data, outputting a detection voltage corresponding to image data received from outside of the CMOS image sensor, and counting in synchronization with a clock signal, starting from an initial value equal to the inverted first digital data, and for an amount of time responsive to a voltage level of the detection voltage.11-03-2011
20090084941COUNTER CIRCUIT, AD CONVERSION METHOD, AD CONVERTER, SEMICONDUCTOR DEVICE FOR DETECTING DISTRIBUTION OF PHYSICAL QUANTITIES, AND ELECTRONIC APPARATUS - A solid-state image pick up device including a pixel array unit having unit pixels arranged in a matrix pattern. Each unit pixel includes a photoelectric converter. Additionally, the solid-state image pick up device has column signal lines that correspond to the respective columns of the matrix pattern, a row scanning means for selectively controlling each unit pixel, and an analog-digital converting unit for converting analog signals output from the unit pixels in a row selectively controlled by the row scanning means. The analog-digital converting unit further includes an asynchronous counter which performs counting in two modes and the asynchronous counter includes a counter processor configured so that when switching between the count modes occurs, a running count value is broken and there is an interval between the count modes and when a mode begins the running count value is reset to the value before the running count value was broken.04-02-2009
20080237451Wide dynamic range image sensor - An exemplary image sensor comprises a photodetector proximate to a pixel site, and a light meter proximate to the pixel site configured to approximate an initial charge acquired by the photodetector at the end of a first integration period of a frame exposure period. A reset circuit resets the photodetector if the approximated initial charge acquired by the photodetector exceeds a threshold. A readout circuit detects a final charge acquired by the photodetector at the end of a second integration period of the frame exposure period. If the photodetector was reset, the readout circuit adjusts the final exposure to account for exposure prior to the photodetector having been reset.10-02-2008
20080237446SOLID-STATE IMAGE PICKUP DEVICE AND METHOD - A solid-state image pickup device and method are provided. The device can not only operate with a wide dynamic range but it also allows the user to switch the dynamic range corresponding to the photographic scene, and its operating method. Plural pixels, each of which has a photodiode, a transfer transistor, a floating diffusion region, an additional capacitance element, a capacitance coupling transistor, and a reset transistor, are integrated in an array on a semiconductor substrate. The capacitance of such floating diffusion region is less than that of such photodiode. A first signal S10-02-2008
200903090084 TRANSISTORS 4 SHARED STEP & REPEAT UNIT CELL AND 4 TRANSISTORS 4 SHARED IMAGE SENSOR INCLUDING THE UNIT CELLS - A 4T-4S step & repeat unit cell obtained by combining four image sensor unit cells each including four transistors and a 4T-4S image sensor including the 4T-4S step & repeat unit cell are provided. The 4T-4S step & repeat unit cell includes first and second shared image sensor unit cells. The first shared image sensor unit cell includes first and third photodiodes and five transistors. The second shared image sensor unit cell includes second and fourth photodiodes and five transistors. The second photodiode is disposed over the first photodiode. The third photodiode is disposed at a side of the second photodiode. A terminal of each of the fourth photodiode is connected to a first voltage source. Signals corresponding to images incident onto the first and third photodiodes are output through a first common detection line OUT12-17-2009
20120292486SOLID-STATE IMAGING ELEMENT HAVING IMAGE SIGNAL OVERFLOW PATH - Since the great number of elements constituting a unit pixel having an amplification function would hinder reduction of pixel size, unit pixel n,m arranged in a matrix form is comprised of a photodiode, a transfer switch for transferring charges stored in the photodiode, a floating diffusion for storing charges transferred by the transfer switch, a reset switch for resetting the floating diffusion, and an amplifying transistor for outputting a signal in accordance with the potential of the floating diffusion to a vertical signal line, and by affording vertical selection pulse φVn to the drain of the reset switch to control a reset potential thereof, pixels are selected in units of rows.11-22-2012
20100090093Image Sensor and Method For Manufacturing the Same - An image sensor is provided. The image sensor comprises a readout circuitry, a first image sensing device, an interconnection, and a second image sensing device. The readout circuitry is disposed in a first substrate. The first image sensing device is disposed at one side of the readout circuitry of the first substrate. The interconnection is disposed over the first substrate and electrically connected to the readout circuitry. The second image sensing device is disposed over the interconnection.04-15-2010
20110198481Image sensor and operating method - An image sensor and a method of operating the image sensor are provided. At least one pixel of the image sensor includes a detection portion including a plurality of doping areas having different pinning voltages, and a demodulation portion to receive an electron from the detection portion, and to demodulate the received electron.08-18-2011
20090250594SOLID-STATE IMAGE SENSOR AND MANUFACTURING METHOD THEREOF - A solid-state image sensor that has a high pixel count and includes a color filter having high color reproducibility is provided. The solid-state image sensor includes: light-collecting elements each of which is a medium containing dispersant particles; light-receiving elements each of which is provided for a corresponding one of the light-collecting elements, and which receives light collected by the corresponding one of the light-collecting elements and generates an electric signal; and electrical wiring for transferring the electric signal, wherein each of the light-collecting elements has one of plural light-dispersion functions that are different depending on the corresponding light-receiving elements.10-08-2009
20090166512Organic Pixeled Flat Detector Having Increased Sensitivity - An organic pixel eel flat detector has increased sensitivity. This is obtained by a preamplification at the pixel level.07-02-2009
20110139963IMAGE SENSORS, METHODS, AND PIXELS WITH STORAGE AND TRANSFER GATES - An image sensor includes a pixel array with a plurality of pixels. A pixel includes a photodiode, a first transfer gate, a storage gate, and a second transfer gate. The first transfer gate is controllable to transfer charge from the photodiode to under the storage gate. The storage gate is connected to a readout circuit to allow the readout circuit to read out a voltage level of a potential at the storage gate. The second transfer gate is controllable to transfer charge from under the storage gate. A method includes controlling the first transfer gate to transfer charge from the photodiode to under the storage gate, reading out a voltage level of a potential at the storage gate using the readout circuit that is connected to the storage gate, and controlling the second transfer gate to drain charge from under the storage gate.06-16-2011
20110198482PHOTOELECTRIC CONVERSION DEVICE AND IMAGING DEVICE - A photoelectric conversion device prevents a pseudo signal caused by the parasitic capacitance of a transfer switch from being input to an amplifier. A photoelectric conversion device (08-18-2011
20090090845Method and apparatus providing shared pixel architecture - Methods and apparatuses using pixels with shared readout circuits are used to increase pixel fill factor and operation efficiency.04-09-2009
20090090846Imaging system with low noise pixel array column buffer - An imaging system includes a row and column array of active pixels, each having an associated pitch. In response to respective control signals, each pixel outputs a reset level which includes noise components, or a signal level which includes signal and noise components. Multiple column buffers, each having a pitch equal to or less than that of a pixel, convey the outputs of respective pixel columns to a bus line. Each buffer comprises ‘odd’ and ‘even’ S&H/CDS circuits, which process the pixel outputs of odd and even rows, respectively. Each S&H/CDS circuit subtracts pixel reset level from signal level to produce an output in which correlated noise is suppressed. Each column buffer includes a buffer amplifier which conveys the output to the bus line. A gain amplifier separate from the column buffers is coupled to the bus line such that it amplifies the outputs of a multiple column buffers.04-09-2009
20080283726BACKSIDE ILLUMINATED IMAGING DEVICE, SEMICONDUCTOR SUBSTRATE, IMAGING APPARATUS AND METHOD FOR MANUFACTURING BACKSIDE ILLUMINATED IMAGING DEVICE - A backside illuminated imaging device performs imaging by illuminating light from a back side of a p substrate to generate electric charges in the substrate based on the light and reading out the electric charges from a front side of the substrate. The device includes n layers located in the substrate and on an identical plane near a front side surface of the substrate and accumulating the electric charges; n+ layers between the respective n layers and the front side of the substrate, the n+ layers having an exposed surface exposed on the front side surface of the substrate and functioning as overflow drains for discharging unnecessary electric charges accumulated in the n layers; p+ layers between the respective n+ layers and the n layers and functioning as overflow barriers of the overflow drains; and an electrode connected to the exposed surface of each of the n+ layers.11-20-2008
20090045321Image sensor, method of manufacturing the same, and method of operating the same - An image sensor includes a photoelectric conversion section in a semiconductor substrate, the photoelectric conversion section having a capping layer of a first conductivity type and a photodiode of a second conductivity type below the capping layer, the photodiode having an upper surface deeper than about 1 μm, as measured from an upper surface of the semiconductor substrate, a charge detection section receiving charges stored in the photoelectric conversion through a charge transfer section and converting the received charges into respective electrical signals, a voltage application section adapted to apply voltage to the capping layer and to a lower portion of the semiconductor substrate to control a width of a depletion layer on the photodiode, and a signal operation section adapted to generate red, green, and blue, signals according to signals from the charge detection section.02-19-2009
20090189057CMOS image sensor with current mirror - An image sensor includes a pixel with a drive transistor and a select transistor. The drive transistor is driven according to a voltage at a floating diffusion node. The select transistor is coupled in series with the drive transistor for being turned on when the pixel is selected. The image sensor also includes a current mirror unit having first and second branches conducting mirrored currents. The first branch is coupled to the drive transistor, and the second branch is coupled to the select transistor at an output node of the pixel. With such biasing by the current mirror, gain drop in the drive transistor is minimized.07-30-2009
20110168873PIXEL OF IMAGE SENSOR HAVING ELECTRICALLY CONTROLLABLE PINNING LAYER - Disclosed are a pinned photodiode having and electrically controllable pinning layer and an image sensor including the pinned photodiode. A predetermined voltage is applied to the pinning layer for the depletion duration of the photodiode in the image sensor, so that stable surface pinning is acquired and the uniform surface pinning is achieved between pixels.07-14-2011
20090272879High conversion gain image sensor - An image sensor includes a photosensitive element, a reset circuit, an amplifier transistor, and a current source. The photosensitive element is coupled to generate an image charge in response to incident light and transfer the image charge to a circuit node. The reset circuit is coupled to selectively reset a voltage at the circuit node. The amplifier transistor includes a gate terminal responsive to the voltage at the circuit node. A current source is coupled between a high level power rail and a second terminal of the amplifier transistor.11-05-2009
20090294635Inspection Method and Apparatus, Lithographic Apparatus, Lithographic Processing Cell and Device Manufacturing Method - In a scatterometry apparatus having an illumination aperture stop, a field stop is provided at an intermediate image to control a spot size on a substrate. The field stop may be apodized, e.g., having a transmissivity in the form of a trapezium or a Gaussian shape.12-03-2009
20090294633Image sensor using photo-detecting molecule and method of operating the same - Provided is an image sensor using a photo-detecting molecule and a method of operating the image sensor. The image sensor may include a plurality of first electrodes disposed parallel to each other and a plurality of second electrodes disposed parallel to each other in a direction perpendicular to the first electrodes and above the first electrodes, and a plurality of subpixels formed in regions where the first electrodes cross the second electrodes. Each of the subpixels may comprise a photo-detecting molecule layer that may generate charges by absorbing light having a certain wavelength, a charge generation layer that may form a plurality of secondary electrons by receiving the charges from the photo-detecting molecule layer when a known voltage is applied between the first electrodes and the second electrodes, and a variable resistance layer, an electrical state of which is changed by receiving the secondary electrons generated from the charge generation layer.12-03-2009
20130099093DETECTION APPARATUS AND DETECTION SYSTEM - A detection apparatus includes a transistor disposed on a substrate, a conversion element disposed above the transistor and connected to the transistor, a capacitor connected in parallel with conversion element to the transistor, the capacitor including, between the substrate and the conversion element, an ohmic contact part connected to the conversion element, a semiconductor part connected to the ohmic contact part, and an electrically conductive part disposed at a location opposite to the semiconductor part and the ohmic contact part via an insulating layer, and a potential supplying unit configured to selectively supply a first electric potential to the electrically conductive part to accumulate charge carriers in the semiconductor part and a second electric potential to the electrically conductive part to deplete the semiconductor part. The detection apparatus configured in the above-described manner is capable of controlling pixel capacitance thereby achieving a high signal-to-noise ratio.04-25-2013
20130099095MULTIPLE-GAIN CHARGE SENSING IN IMAGE SENSORS - In various embodiments, image sensors include output channels enabling high-gain and/or low-gain charge read-out while minimizing charge-conversion noise.04-25-2013
20090283663SOLID-STATE IMAGING DEVICE AND DRIVING METHOD THEREOF - It is an object of the present invention to provide a solid-state imaging device capable of significantly improving the signal readout characteristics of the pixel compared to the conventional technologies at low cost, without degrading the reliability, and a driving method thereof. The solid-state imaging device according to the present invention is a solid-state imaging device which includes a drive circuit, and the drive circuit includes: a P-channel transistor and a N-channel transistor which include gates connected to an output of the scanning circuit, and which include drains that are connected to each other, and a connecting point of the drains is connected to the control signal line, a switch which switches between VHI and DVDD to be supplied to a source of the P-channel transistor, and a switch which switches between VLOW and VGND to be supplied to a source of the N-channel transistor.11-19-2009
20090289171OPTICAL POINTING DEVICE - An optical pointing device is provided. The optical pointing device includes an image sensor including a photocell array including a plurality of photocells for sensing light and generating an analog signal corresponding to the light, the image sensor sequentially outputting analog signals from the plurality of photocells, a comparator for comparing the signals output from the image sensor to generate a relative comparative signal, and comparing at least one signal output from the image sensor with a comparative signal to generate an absolute comparative signal, and a controller for outputting motion data using the relative comparative signal and outputting a shutter control signal using the absolute comparative signal. The optical pointing device does not include an A/D converter or a pre-filter circuit, thus reducing a chip size of a semiconductor integrated circuit, unlike a conventional optical pointing device. Furthermore, the optical pointing device can obtain high-quality image data and accordingly accurate motion data of an object, by using the comparator having the offset removal and the offset correction circuit external to the image sensor. Also, the use of the second photocell separate from the image sensor can reduce data computational complexity of the shutter control signal controller in the image processor, thus reducing current consumption in the image processor.11-26-2009
20090289172DETECTION OF SEED LAYERS ON A SEMICONDUCTOR DEVICE - A device and/or method which detects a seed layer and a device and/or method of forming layers on a semiconductor device. The device which forms layers on the semiconductor device may include a metal layer forming unit (which forms a metal layer on a wafer), a copper seed layer forming unit (which forms a copper seed layer on the metal layer), a wafer alignment device (which includes a wafer alignment unit which aligns the wafer to a predetermined position), a copper seed layer detecting unit (which is positioned above the wafer alignment unit to detect the copper seed layer formed on the wafer), and a plating unit (which forms a copper interconnection layer on the copper seed layer).11-26-2009
20090294634IMAGING DEVICE - A close contact type imaging device is an imaging device for acquiring an image of an object in a state that the object is in close contact to an image sensor. This imaging device has an angle limiting filter. The angle limiting filter is constructed from: a glass substrate of a parallel plate; and a dielectric multilayer film provided on the glass substrate. This angle limiting filter transmits light within a particular wavelength range approximately perpendicularly incident onto the surface, and shields light outside the particular wavelength range and light within the particular wavelength obliquely incident onto the surface.12-03-2009
20090294631IMAGE SENSOR HAVING REDUCED WELL BOUNCE - A CMOS image sensor or other type of image sensor comprises a pixel array and sampling and readout circuitry associated with the pixel array. In conjunction with readout of one or more pixels in a selected group of pixels of the pixel array, a pixel power line signal of the array transitions from an inactive state to an active state, and a reset signal of a non-selected group of pixels of the pixel array transitions from an active state to an inactive state within a predetermined time prior to the transition of the pixel power line signal from its inactive state to its active state. This arrangement advantageously reduces well bounce in the image sensor. The image sensor may be implemented in a digital camera or other type of digital imaging device.12-03-2009
20100127156Two dimensional solid-state image pickup device - A two-dimensional solid-state image pickup device includes a plurality of pixel regions arranged in a two-dimensional matrix in X and Y directions. Each of the pixel regions includes at least a light-receiving element, and a light-condensing element. The light-condensing element is a sub-wavelength lens including protrusions each having a size equivalent to or smaller than a wavelength of an electromagnetic wave incident on the light-receiving element. Each of the protrusions has a rounded edge.05-27-2010
20090294630IMAGE SENSOR, IMAGE READING DEVICE AND PRODUCTION METHOD OF IMAGE SENSOR - An image sensor and a manufacturing method thereof are provided, so that the warp or the distortion is not caused even if there is the thermal expansion difference or the thermal contraction difference in the longitudinal direction between the linear illuminating device and the frame. The image sensor comprises a linear illuminating device for illuminating an original; a light-receiving element array for receiving reflected light from the original; a lens array for focusing the original on the light-receiving element array; a frame for containing the linear illuminating device, the lens array, and the light-receiving element array; and a resilient retaining portion for pressing the linear illuminating device, which is mounted in the frame, into the frame.12-03-2009
20090294629Image sensing device - In an image sensing device having a housing, having a circuit assemblage disposed on a circuit board, and having an image sensor that is disposed on a circuit board and in front of an opening of the housing, in order to improve the shielding effect, at least one shielding layer is disposed on the circuit board carrying the image sensor.12-03-2009
20110204210Single-Photon Avalanche Detector-Based Focal Plane Array - An imaging sensor having sensitivity at the single-photon level is disclosed. The sensor comprises an array of pixels, each of which comprises a negative-feedback avalanche diode and a read-out circuit that includes a counter. The counter keeps track of the number of photons detected by the diode during a given time period.08-25-2011
20120292487POSITIVE RESIST COMPOSITION AND METHOD FOR PRODUCING MICROLENS - There is provided a resist composition suitable for forming a microlens which is excellent in transparency, heat resistance, and sensitivity characteristics, excellent in solubility in a developer, and as the result thereof has high resolution. A positive resist composition comprising; a component (A): an alkali-soluble polymer; a component (B): a compound having an organic group to be photolyzed to generate an alkali-soluble group; a component (C): a crosslinkable compound of Formula (1):11-22-2012
20120292485SOLID-STATE IMAGING DEVICE AND AD CONVERSION METHOD - A solid-state imaging device includes an imager including pixels arranged in a matrix, and AD converters, each of which is provided in each pixel column and converts a signal voltage read from one of the pixels located in the column to a digital value. Each of the AD converters includes a comparator and a counter section including a counter circuit, which receives a comparison result of the comparator and includes a first DFF for n bits, and a transfer circuit, which includes a second DFF for n bits holding and outputting a count value of the counter circuit. The second DFFs provided in the columns are coupled in series to form a transfer section transferring the signal voltage which has been digitally converted.11-22-2012
20120292484IMAGE SENSOR - An image sensor for electronic cameras includes a plurality of light-sensitive pixels arranged in rows and columns for generating exposure-dependent pixel signals in an image field. Each pixel includes at least one light-sensitive element to generate electric charge from incident light and a converter transistor to convert a charge into a voltage signal. The pixels form a plurality of pixel groups with at least one common read-out circuit being associated with each pixel group are coupled to the output of the associated converter transistor. An amplifier circuit amplifies the voltage signals from each converter transistor.11-22-2012
20120292483ELECTRON-MULTIPLICATION IMAGE SENSOR - This description relates to active-pixel image sensors. Each pixel includes, at the surface of a semiconductor active layer, a photodiode region, a charge storage node and a transfer structure for transferring charges from the photodiode to the storage node after a charge integration time for charges generated by the light in the photodiode. The transfer structure includes a first transfer gate adjacent to the photodiode, a second transfer gate adjacent to the storage node, and an electron-multiplication amplifying structure located between the first and second transfer gates. The amplifying structure includes two separate accelerating gates and an intermediate diode region at a fixed surface potential, located between the two accelerating gates. A succession of alternating high and low potentials is applied to the accelerating gates while the charges are in transit in the transfer structure, before they are transferred to the storage node.11-22-2012
20090261235CMOS Image Sensor With High Sensitivity Wide Dynamic Range Pixel For High Resolution Applications - A CMOS image sensor in which each pixel includes a conventional pinned diode (photodiode), a Wide Dynamic Range (WDR) detection (e.g., a simplified time-to-saturation (TTS)) circuit, a correlated double sampling (CDS) circuit, and a single output chain that is shared by both the CDS and WDR circuits. The pinned diode is used in the conversion of photons into charge in each pixel. In one embodiment, light received by the photodiode is processed using a TTS operation during the CDS integration phase, and the resulting TTS output signal is used to determine whether the photodiode is saturated. When the photodiode is saturated, the TTS output signal is processed to determine the amount of light received by the photodiode. When the photodiode is not saturated, the amount of light received by the photodiode is determined using signals generated by the readout phase of the CDS operation.10-22-2009
20080245952Synchronous imaging using segmented illumination - In an actively illuminated imaging system, illumination of a segmented scene is synchronized with an image sensing period. A scene is segmented into a plurality of scene portions utilizing a segmented lens. In an aspect, a first scene portion is illuminated when an imager is actively collecting photogenerated charge from the first scene portion, and a second scene portion is illuminated when an imager is actively collecting photogenerated charge from the second scene portion. The sensitivity of an image sensor is maximized, while simultaneously minimizing the amount of light that must be supplied to illuminate a scene. An irradiance pattern is varied allowing a more uniform distribution of light. Bands of varying wavelength, polarization, and light intensity may be variously applied to illuminate individual scene segments, as needed to enhance an identification of an object in the scene. The present invention is particularly useful with high frame rate imaging systems.10-09-2008
20110266416IMAGING APPARATUS, IMAGING METHOD, AND IMAGING PROGRAM - An imaging operation is executed by partially shielding, from incident light coming from a subject, a photodetecting element (A(m, n)) including a photodetecting surface (P(m, n)) having a prescribed area and adapted to generate output values corresponding to light quantities received by the photodetecting surface, acquiring output values from the photodetecting element in each of a plurality of states in which different portions of the photodetecting element are shielded, and calculating a pixel information corresponding to a light quantity received by a region that is smaller than the photodetecting surface of the photodetecting element based on differences between the output values acquired in the plurality of states.11-03-2011
20100102205VENTED HEADER ASSEMBLY OF AN IMAGE INTENSIFIER DEVICE - An image intensifier device and a method of fabricating the image intensifier device are disclosed. The image intensifier device includes a microchannel plate (MCP) having a thin-film applied to a surface thereof. An anode assembly comprising an image sensor mounted to a header is positioned adjacent the MCP. A spacer defining a mounting surface is positioned against a mounting surface of the header of the anode assembly for separating the MCP from the anode assembly. A recess is defined in either the header or the spacer at the interface between the header and the spacer. The recess forms a passageway defined between the spacer and the header thru which organic gases pass.04-29-2010
20080251695IMAGE SENSING APPARATUS AND IMAGE SENSING METHOD - An image sensing apparatus and an image sensing method of the invention are configured in such a manner that an image sensor having two or more different photoelectric conversion characteristics is used, a gain of image signals having the respective photoelectric conversion characteristics acquired by the image sensor is calculated based on the image signals having the respective photoelectric conversion characteristics, and gain control is performed with respect to each of the photoelectric conversion characteristics, using the calculated gain. This arrangement enables to control the imaging sensitivity without changing the dynamic range.10-16-2008
20080251693Resolution switch circuit for image sensor - A resolution switch circuit for an image sensor uses a control unit to control a plurality of image gathering units to generate and store image signals. A resolution control unit controls a plurality of shift registers through the resolution control signals so that the shift registers control the image gathering units to output image signals. The signal combining unit is used to combine the image signals output from the image gathering units to achieve resolution change. Since the resolution switch circuit for the image sensor according to invention does not require additional resolution switch wiring, the affect of noise can be avoided and cost of the circuits can be reduced. The transmission of the image signals in the form of charges prevents any signal distortion due to resistance of wiring during transmission.10-16-2008
20080237447ULTRA LOW VOLTAGE CMOS IMAGE SENSOR ARCHITECTURE - An optical sensor has at least one pixel that generates an output voltage that changes at a rate dependent on the light intensity incident on the pixel. The time for the pixel output voltage to change from a first predefined level to a second predefined level is measured, so as to produce an output indicative of the incident light intensity.10-02-2008
20080237449Imaging device with reduced row readout time and method of operating the same - An imager in which a column line bias current control signal is pulsed at some time during and/or after the pulsing of the reset control and the transfer control signals to increase a bias current in a pixel column line during reset and transfer operations. The bias current is then decreased by removing the pulse before the sampling and storing of reset and image signals. Pulsing the bias control voltage signal and thus, the bias current, decreases the settling time of the column line, while maintaining the required low current during sampling and storage of the reset and image signals.10-02-2008
20080265139COMBINATION READER - An imaging system for collecting images of signals associated with a sample tile comprising a stage supporting the sample tile, a ring illuminator system emitting a uniform excitation energy upon an entirety of the sample tile causing at least a first signal to be generated from the sample tile, and an image collecting device collecting a first image of the first signal. The image collecting device further collecting a second image of a second signal emitted from the sample tile, wherein the second signal being different than the first signal.10-30-2008
20090166515MULTI-POINT CORRELATED SAMPLING FOR IMAGE SENSORS - An improved passive pixel sensor (PPS) circuit comprising a correlated sampling circuit and method that integrates pixel charge leakage onto an integrating amplifier during sampling periods. An integrator circuit is provided for integrating PPS pixel charges received via a column line, and correlated sampling circuit is provided for the removal of kTC noise and dark integration. A multi-point sampling of the output of the integrator is provided wherein at least a first and second correlated sample are used to detect the charge integration from the column line leakages, and at least a third sample is used to detect the PPS signal after pixel readout. The correlated sampling method is employed to remove kTC noise and dark integration from the PPS signal.07-02-2009
20090095882NEAR-FIELD NANO-IMAGER - An imaging device. In one embodiment, the imaging device includes a plurality of first electrode strips in parallel to each other along a first direction x, wherein each first electrode strip has an elongated body with a first surface and an opposite, second surface and a thickness n04-16-2009
20090166513SOLID-STATE IMAGING DEVICE - A solid-state imaging device in the present invention includes pixels, arranged in a matrix, each of which converts light into a signal voltage; column signal lines each of which is provided for corresponding one of columns, so that the signal voltage is provided to corresponding one of the column signal lines; and AD converting units each of which is provided for the corresponding one of the column signal lines, and configured to convert the signal voltage into a digital signal, wherein each of the AD converting units includes: a comparing unit generating an output signal indicating a greater voltage of the signal voltage and a reference voltage; and a counting unit counting a count value until logic of the output signal is inverted, and the solid-state imaging device further includes a suspending unit suspending power supply to the comparing units after the logic of the output signals is inverted.07-02-2009
20080283730CMOS IMAGE SENSOR USING GRADIENT INDEX CHIP SCALE LENSES - A camera module includes a gradient index lens on a spacer plate attached over an array of pixel sensors and associated micro lenses. The spacer plate and gradient index lens can be formed at the wafer level during the manufacture of multiple camera modules. A process for manufacturing the camera modules thus provides tolerances and yields provided by wafer processing techniques rather than mechanical assembly.11-20-2008
20080283727Solid-state imaging device and imaging apparatus - There is provided a solid-state imaging device, including: a semiconductor substrate having a plurality of pixels, each having a photoelectric conversion portion, formed therein; and a laminated film formed on said semiconductor substrate; wherein said laminated film includes a hydrogen desorbing film for desorbing hydrogen, and a hydrogen blocking-off film disposed so as to overlie said hydrogen desorbing film.11-20-2008
20080290255True Color Image By Modified Microlens Array - An image sensor array includes a substrate having at least three image sensors located therein. The image sensor array also includes a blue filter positioned proximate to the first image sensor; a green filter proximate to the second image sensor; and a red filter proximate to the third image sensor. A first microlens is positionally arranged with the blue filter and the first image sensor; a second microlens is positionally arranged with the green filter and the second image sensor; and a third microlens is positionally arranged with the red filter and the third image sensor. The first microlens has a larger effective area than the second microlens, and the second microlens has a larger effective area than the third microlens.11-27-2008
20080290254IMAGING APPARATUS HAVING ELECTRON SOURCE ARRAY - An imaging apparatus includes an electron emission array having electron sources arranged in matrix form and having a plurality of horizontal scan lines, a photoelectric conversion film opposed to the electron emission array, and a control and drive circuit configured to select one or more of the horizontal scan lines in a given video signal output period and to cause the electron sources included in the selected one or more horizontal scan lines to emit electrons toward the photoelectric conversion film to produce a video signal, wherein the control and drive circuit is configured to cause the electron sources included in unselected one or more horizontal scan lines not selected in the given video signal output period to emit electrons toward the photoelectric conversion film in a blanking period immediately preceding the given video signal output period.11-27-2008
20080230681IMAGE CAPTURE DEVICE - An image capture device, which illuminates a subject and receives light reflected from the subject to capture an image of the subject, is provided to achieve a small-size configuration and easy assembly. A plurality of light-emitting elements are mounted in positions on the periphery of an image sensor, and a light-guiding member guides light from the plurality of light-emitting elements to the image capture range for illumination. And protrusions of the light-guiding member are pressed by the lower end of a hood which blocks light from outside the image capture range, and the hood upper end is pressed by a filter. Slits are provided in the hood lower end. Even in assembly where a visible light filter is installed on the hood and fixed to an outer case, the occurrence of gaps between the hood and the visible light filter can be prevented through the spring action of the slits.09-25-2008
20120138773IMAGE CAPTURE APPARATUS - An image capture apparatus includes an image sensor which includes, a plurality of image forming pixels, and a plurality of focus detecting pixels that receive light beams having passed through the exit pupils of the imaging lenses while they are partially shielded, a vertical output line which outputs, in the vertical direction of the image sensor, signals of a plurality of pixels aligned on one column, a vertical addition unit which adds, in the vertical direction of the image sensor, signals of a plurality of pixels aligned on one column, and a control unit which controls so that the vertical addition unit is always OFF when the focus detecting pixel is included in pixels having signals to be added, in adding the signals of the plurality of pixels in the vertical direction and reading them out by the vertical addition unit.06-07-2012
20090032681Detector and detecting method - A detector for detecting an image sensor is provided. The image sensor is electrically connected to a wafer via a contacting pad. The detector includes a parallel light source, a pin and a diffuser. The parallel light source radiates a parallel light. The pin is electrically connected to the contacting pad. The diffuser is disposed between the parallel light source and the pin. The parallel light from the parallel light source passes through the diffuser and then reaches the image sensor on the wafer.02-05-2009
20090014629IMAGING-CONTROL APPARATUS AND METHOD OF CONTROLLING SAME - For performing imaging with a high-frame rate, a control apparatus determines the time where at least one electrical charge of a sensor is read based on information about the position of an irradiation area of the sensor, the irradiation area being irradiated with a radiation, so that the time period where at least one electrical charge of a non-irradiation area of the sensor is read, the non-irradiation area being irradiated with no radiation, overlaps the time period where irradiation with the radiation is performed and the time period where at least one electrical charge of the irradiation area of the sensor is read does not overlap the radiation-irradiation-time period.01-15-2009
20080251697IMAGE SENSOR AND METHOD OF FABRICATION - Disclosed is an image sensor and method of fabricating the same. The image sensor includes a photoelectric transformation region formed in a semiconductor substrate, and pluralities of interlayer dielectric films formed over the photoelectric transformation regions. The interlayer dielectric films contain multilevel interconnection layers. A color filter layer is disposed in a well region formed in the interlayer dielectric films over the photoelectric transformation region. A passivation layer is interposed between the color filter layer and the interlayer dielectric films.10-16-2008
20080251696IMAGE SENSOR POWER DISTRIBUTION - An image sensor power distribution arrangement includes a sensing portion having a first contact at a first edge thereof and a second contact at a second edge thereof, and a control portion. A first power supply supplies power to the sensing portion via the first contact. A second power supply supplies power to the sensing portion via the second contact, and to the control portion.10-16-2008
20080277566Image Forming State Detection Device - An image forming state detection device comprises a micro-lens array that is disposed at a position set apart from a predetermined focal plane of an image forming optical system by a specific distance and includes a plurality of micro-lenses arrayed with a predetermined pitch, a light-receiving portion array that includes a plurality of light-receiving portions each corresponding to one of the micro-lenses in the micro-lens array and receives an image on the predetermined focal plane via the individual micro-lenses, a signal string extracting means that extracts a pair of signal strings corresponding to images, formed with light fluxes having passed through different pupil areas of the image forming optical system, based upon light reception outputs obtained from the plurality of light-receiving portions, and an image forming state calculating means that calculates an image forming state at the image forming optical system by detecting an offset with regard to the phases of the pair of signal strings extracted by the signal string extracting means.11-13-2008
20130119233IMAGING DEVICE WITH HIGH DYNAMIC RANGE - A high dynamic range imaging device including a first substrate with multiple pixels, each pixel having a photodetector associated with multiple read-out circuits. Each read-out circuit including a device for charging and discharging the photodetector that is associated with the read-out circuit. Each charging and discharging device being controlled by a charge and discharge activation signal imposing an integration time of the photodetector of each pixel associated with the read-out circuit. The device further including a second substrate, distinct from the first, with an electronic control circuit for controlling the charging and discharging devices, designed for generating multiple charge and discharge activation signals to be transmitted to the charging and discharging devices using electrical connections between the first and second substrates. Each pixel or group of pixels is associated to an activation signal imposing an integration time specific and appropriate to the pixel or group of pixels.05-16-2013
20130119234UNIT PIXEL AND THREE-DIMENSIONAL IMAGE SENSOR INCLUDING THE SAME - A unit pixel of a three-dimensional image sensor includes a non-silicon photodetector and at least one readout circuit. The non-silicon photodetector is formed at a silicon substrate, and the non-silicon photodetector comprising at least one of non-silicon materials to generate a photocharge in response to incident light. The at least one readout circuit is formed at the silicon substrate, the at least one readout circuit outputs a sensing signal based on the photocharge, and the sensing signal generates depth information on a distance to an object.05-16-2013
20130119235SOLID-STATE IMAGING APPARATUS AND METHOD FOR DRIVING SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus includes: a plurality of pixels each configured to output a signal generated by a photoelectric conversion via a source follower circuit; an output line connected to the plurality of pixels; a current source circuit portion for supplying a current to the output line; and a first amplifier unit configured to clamp a signal from the output line of the pixel at a reset state to a clamping capacitor, and to amplify thereafter the signal from the output line of the pixel at a non-reset state, wherein the current source circuit portion changes from a state of supplying no current to the output line to a state of supplying the current to the output line before a timing of terminating the clamping of the signal.05-16-2013
20130119236RESONANCE ENHANCED ABSORPTIVE COLOR FILTERS - Resonance enhanced color filter arrays are provided for image sensors. Resonance cavities formed with color filter materials that enhance the color filtering capabilities of the color filter materials. Resonance enhanced color filter arrays may be provided for back side illumination image sensors and front side illumination image sensors. A layer of high refractive index material or metamaterial may be provided between a microlens and a color filter material to serve as a first, partially reflecting interface for the resonance cavity. An optional layer of high refractive index material or metamaterial may be provided between color filter material and a substrate. In front side illumination image sensors, color filter material may be provided in a light guide structure that extends through interlayer dielectric. The color filter material in the light guide structure may form at least part of a resonance cavity tor a resonance enhanced color filter array.05-16-2013
20130119238SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREOF - According to one embodiment, a solid-state imaging device includes a pixel region which is configured such that a photoelectric conversion unit and a signal scanning circuit unit are included in a semiconductor substrate, and a matrix of unit pixels is disposed, and a driving circuit region which is configured such that a device driving circuit for driving the signal scanning circuit unit is disposed on the semiconductor substrate, wherein the photoelectric conversion unit is provided on a back surface side of the semiconductor substrate, which is opposite to a front surface of the semiconductor substrate where the signal scanning circuit unit is formed, and the unit pixel includes an insulation film which is provided in a manner to surround a boundary part with the unit pixel that neighbors and defines a device isolation region.05-16-2013
20130119239IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - An image sensor includes a color filter, an over-coating layer formed on the color filter, and a medium layer formed on the over-coating layer, wherein the medium layer is configured with at least two medium layers of which refractive indices are different from each other.05-16-2013
20130119240PHOTOELECTRIC CONVERSION CELL AND ARRAY, READING METHOD THEREFOR, AND CIRCUIT THEREOF - In order to achieve a photovoltaic cell and an array of high sensitivity and high dynamic range, there is a need for a photovoltaic cell and an array which are combined so that an amplified photovoltaic element and a selection element are resistant to external noise, and so that the combination is resistant to effects from address selection pulse noise at array readout time. In the present invention, in order to solve the problem, a photovoltaic cell has been configured with a combination of an amplified photovoltaic element (05-16-2013
20080283728Solid-state image pickup device and a method of manufacturing the same, and image pickup apparatus - Disclosed herein is a solid-state image pickup device, including: a first pixel for receiving a visible light of an incident light to subject the visible light to photoelectric conversion; a second pixel for receiving the visible light and a near-infrared light of the incident light to subject each of the visible light and the near-infrared light to the photoelectric conversion; a color filter layer; and an infrared light filter layer for absorbing or reflecting an infrared light, and transmitting the visible light.11-20-2008
20080265140SEMICONDUCTOR PIXEL ARRAYS WITH REDUCED SENSITIVITY TO DEFECTS - A pixel structure is described, comprising at least two selection switches coupled in series to improve the yield of the pixel. Also an array comprising such pixel structures logically organized in rows and columns is described, as well as a method for selecting a row or column of pixel structures in such an array.10-30-2008
20080265138IMAGE PICK-UP ELEMENT AND PHOTOELECTRIC CONVERSION ELEMENT ARRAY - An image pick-up element comprises: an optical element substrate part in which the image pick-up element generates a signal charge by photo-electrically converting an incident light applied from one surface side of the optical element substrate part to read the signal charge from the other surface side of the optical element substrate part and picks up an image; and a CMOS circuit substrate part connected to the other surface side of the optical element substrate part so as to transfer the signal charge generated in the photoelectric conversion layer, wherein the optical element substrate part comprises a photoelectric conversion layer to generate the signal charge by photo-electrically converting the incident light.10-30-2008
20110006193ANTI-RESONANT REFLECTING OPTICAL WAVEGUIDE FOR IMAGER LIGHT PIPE - An anti-resonant reflecting optical waveguide structure for reducing optical crosstalk in an image sensor and method of forming the same. The method includes forming a trench within a plurality of material layers and over a photo-conversion device. The trench is vertically aligned with the photo-conversion device and is filled with materials of varying refractive indices to form an anti-resonant reflecting optical waveguide structure. The anti-resonant reflecting optical waveguide structure has a core and at least two cladding structures. The cladding structure in contact with the core has a refractive index that is higher than the refractive index of the core and the refractive index of the other cladding structure. The cladding structures act as Fabry-Perot cavities for light propagating in the transverse direction, such that light entering the anti-resonant reflecting optical waveguide structure remains confined to the core. This reduces the chance of photons impinging upon neighboring photo-conversion devices.01-13-2011
20110204209LOW PROFILE CAMERA AND VISION SENSOR - A monolithic camera configured for a predetermined environment can be made in the following manner. The camera is formed from an integrated circuit that has a light sensitive portion that can sense light from the predetermined environment. Two or more opaque masks are disposed within the oxide layer above the light sensitive pixel array of the image sensor. These opaque masks may be formed from the “metal” layers typically used for signal routing in image sensor integrated circuits. The opaque masks contain arrays of holes arranged so that for each pixel there is a clear path for light to reach the pixel from a corresponding part of the visual field. Each pixel is associated with a different set of holes that allows a different region of the predetermined environment to be observed.08-25-2011
20110204207PHOTODETECTOR CIRCUIT - A photodetector circuit is provided that includes: a first wiring connected to an input terminal; a second wiring connected to an output terminal; and first and second photosensors each including a first terminal connected to the first wiring and a second terminal connected to the second wiring, wherein the first wiring and the second wiring are arranged in parallel, and the sum of resistance values of a first path from the input terminal to the output terminal via the first wiring, the first photosensor, and the second wiring is identical to the sum of resistance values of a second path from the input terminal to the output terminal via the first wiring, the second photosensor, and the second wiring.08-25-2011
20090045322Optimization of alignment between elements in an image sensor - An image sensor is formed with shifts among the optical parts of the sensor and the photosensitive parts of the sensor. The optical parts of the sensor may include a color filter array and/or microlenses. The photosensitive part may include any photoreceptors such as a CMOS image sensor. The shifts allow images to be formed even when the light received at a given pixel location varies in angle of incidence as a function of pixel location within the array. The relative shifts among the pixel components may be, for example, plus or minus some fraction of the pixel pitch. The shift may be variable across the array or may be constant across the array and may be deterministically determined.02-19-2009
20100140454SOLID STATE IMAGING DEVICE - A solid state imaging device comprises a pixel unit, a first controller, and a second controller. The pixel unit has a two dimensional matrix of pixels and each of the pixels is arrayed in the matrix. The first controller independently controls the output unit row by row. The second controller independently controls the first reset unit row by row. The each of pixels comprises a photoelectric conversion element, a first reset unit, a charge retention unit, a transmitter, a second reset unit, and an output unit. The element converts incident light into a signal charge and accumulates the converted signal charge. The first reset unit resets the signal charge. The charge retention unit retains a signal charge output from the photoelectric conversion element. The transmitter transmits the signal charge to the charge retention unit. The second reset unit resets the signal charge. The output unit outputs a pixel signal in response to the signal charge to a vertical signal line.06-10-2010
20080258043Optical element and optical equipment - The optical element includes a substrate and optical thin film formed in multiple layers on the surface of the pertinent substrate, wherein the optical thin film is provided with low refractive index layers composed of material with a lower refractive index than that of the substrate, and high refractive index layers of which at least 1 layer is composed of material whose primary component is oxide and which have a refractive index higher than that of the low refractive index layers, and wherein at least 1 layer of the optical thin film composed of low refractive index layers and high refractive index layers contains at least one of metal ions selected from among Cu, Fe, Au, Ag, Cr, Mn, Co, and Ni.10-23-2008
20090090844BIASING APPARATUS, SYSTEMS, AND METHODS - Apparatus, methods, and systems for providing a uniform bias voltage in a biasing circuit to a plurality of pixels. The biasing circuit has a plurality of switches, including a first switch connected at a first end of a capacitor and a second end connected to a first ground. A second switch is connected at a first end to a bias voltage reference and at a second end to a gate of a biasing transistor and a second end of the capacitor. A third switch is connected at a first end to the first end of the capacitor and at a second end to the drain of the biasing transistor and a second ground. The first and the second switch are closed and the third switch is open to set a bias voltage on the capacitor. The first and second switch are open and the third switch is closed when the bias voltage is set on the capacitor.04-09-2009
20100140453SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS - Disclosed herein is a solid-state imaging device including: a pixel part configured to include a plurality of light receiving regions corresponding to different wavelengths; and an element isolator configured to separate the plurality of light receiving regions from each other in such a way that each of the light receiving regions in the pixel part has a size suited to an energy profile of light irradiation with a wavelength handled by the light receiving region.06-10-2010
20090184236SOLID STATE IMAGE PICKUP ELEMENT AND CAMERA SYSTEM - A solid state image pickup element includes a pixel unit having a plurality of pixels for photoelectric conversion disposed in a matrix shape and a pixel signal read circuit for reading pixel signals in the unit of a plurality of pixels from the pixel unit. The pixel signal read circuit includes a plurality of comparators disposed in correspondence with a pixel column layout for performing comparison judgment between a read signal potential and a reference voltage and outputting a judgment signal and a plurality of counters each for counting a comparison time of a corresponding one of the comparators, an operation being controlled by an output from a corresponding one of the comparators. The comparators include a first amplifier for performing a comparison operation between the reference voltage and the read signal potential and inverting an output at a predetermined comparison point, a second amplifier for forming a current path when an output of the first amplifier is inverted, to output an output of the first amplifier by gain up, and a current control circuit for shutting the current path of the second amplifier when an output level of the second amplifier exceeds a predetermined threshold level.07-23-2009
20090140124IMAGING DEVICE CAMERA SYSTEM AND DRIVING METHOD OF THE SAME - An imaging device includes: a pixel array part in which a plurality of pixels with different characteristics of spectral sensitivity are arranged in an array and which converts light transmitted through the pixel into an electric signal, wherein in the pixel array part, among a first color filter pixel, a second color filter pixel, and a third color filter pixel, each including a color filter, at least a plurality of the first color filter pixels and the second color filter pixels is arranged in an oblique pixel array system, and a clear pixel having a high transmittance is arranged in an oblique pixel array system at a given position of a given row and a given column in the oblique pixel array with respect to the first color filter pixel, the second color filter pixel, and the third color filter pixel.06-04-2009
20120138774FOCAL PLANE ARRAY PROCESSING METHOD AND APPARATUS - A digital focal plane array includes an all-digital readout integrated circuit in combination with a detector array. The readout circuit includes unit cell electronics, orthogonal transfer structures, and data handling structures. The unit cell electronics include an analog to digital converter. Orthogonal transfer structures enable the orthogonal transfer of data among the unit cells. Data handling structures may be configured to operate the digital focal plane array as a data encryptor/decipherer. Data encrypted and deciphered by the digital focal plane array need not be image data.06-07-2012
20090014628IMAGE CAPTURING APPARATUS - An apparatus including: a photodiode including: a first conductivity substrate; a second conductivity PD-well on the substrate's first surface side; and a first conductivity collection well inside the PD-well; a modulation transistor including: a second conductivity TR-well connected with the PD-well, and a junction depth shallower than that of the PD-well; a first conductivity modulation well inside the TR-well, and connected with the collection well; a second conductivity source inside the modulation well, and including a region contacting the first surface; a gate electrode in a region partially covering the modulation well and enclosing the source; a gate insulation layer between the gate and the first surface; and a second conductivity drain partially sandwiching the gate and opposing the source, and including a region contacting the first surface; and a transfer transistor connected to modulation transistors in pixels between the source and a connected source line.01-15-2009
20110220778SOLID-STATE IMAGING DEVICE - According to one embodiments, a transparent reference electrode is provided to be sandwiched between a red-detecting photoelectric conversion film and a green-detecting photoelectric conversion film, a first transparent driving electrode is provided to face the transparent reference electrode with the green-detecting photoelectric conversion film therebetween, a second transparent driving electrode is provided to face the transparent reference electrode with the red-detecting photoelectric conversion film therebetween, and a blue-detecting photoelectric conversion film is provided below the red-detecting photoelectric conversion film and performs blue detection.09-15-2011
20120068049PHOTOELECTRIC CONVERSION DEVICE AND IMAGE SENSOR - There is provided a photoelectric conversion device utilizing surface plasmons, including: a plate-shaped light receiving portion which made of metal, provided on a most superficial surface of the photoelectric conversion device, and having a front surface and a rear surface so as to receive incident light at the front surface; a slot-shaped slit provided in the front surface of the light receiving portion; and a voltage detection portion adapted to measure an electric potential at the front surface of the light receiving portion; wherein the incident light is caused to excite surface plasmons through the slit, and an electric potential at the front surface of the light receiving portion induced by the surface plasmons is measured by the voltage detection portion.03-22-2012
20110031377SOLID-STATE IMAGING DEVICE - A multi-port solid-state imaging device of one embodiment includes an imaging region and a plurality of units. The imaging region contains a plurality of pixel columns. The units are arrayed in a direction in which the pixel columns are arrayed, and generate signals based on charges from the imaging region. Each unit has an output register, a multiplication register, and an amplifier. The output register transfers a charge from one or more corresponding pixel columns. The multiplication register receives the charge from the output register to generate a multiplied charge. The amplifier generates a signal based on the multiplied charge from the multiplication register. The solid-state imaging device contains a region where the units are provided, and a first dummy region and a second dummy region located on both sides in the above-mentioned direction of the region. In each of the first dummy region and the second dummy region, a multiplication register and an amplifier are provided.02-10-2011
20090321615SOLID-STATE IMAGING DEVICE - The solid-state image pickup device 12-31-2009
20090321614Imaging module with folded illuminating and imaging paths - An imaging module for imaging, and a reader for and a method of electro-optically reading, a target, include a support, an imaging assembly including a solid-state imager having an array of image sensors on the support for capturing return light over a field of view at a range of working distances from the target along a folded imaging path, and an illuminating assembly on the support for directing illumination light along a folded illuminating path having a length longer than the folded imaging path to uniformly illuminate the target with the illumination light. The longer length of the folded illuminating path enables the illuminating assembly to illuminate the target with more of the illumination light, and also enables the imaging assembly to capture more of the return light for increased imaging/reading performance.12-31-2009
20090242736SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREOF AND ELECTRONIC APPARATUS AND MANUFACTURING METHOD THEREOF - A solid-state imaging device is provided. The solid-state imaging device includes a substrate having a light sensing part for each of pixels; and one or more rod members made of a light transmissive material above the light sensing part for each of the pixels.10-01-2009
20100200731SOLID-STATE IMAGING DEVICE - It is intended to provide a CMOS image sensor with a high degree of pixel integration. A solid-state imaging device comprises a signal line (08-12-2010
20100200730Solid state imaging device and electronic apparatus - A solid state imaging device includes: a sensor unit that has a semiconductor substrate in which pixels including photoelectric conversion parts are disposed in an array on a light receiving surface; a lens module which has a plurality of optical members including a lens and which is disposed such that light including information on an image to be imaged is incident on the light receiving surface of the sensor unit; and a phase shift mask in which regions for dividing all light beams into a plurality of groups are set and which makes a different phase shift occur in each of the regions for the light.08-12-2010
201002007293 TRANSISTORS 4 SHARED STEP & REPEAT UNIT CELL AND 3 TRANSISTORS 4 SHARED IMAGE SENSOR INCLUDING THE UNIT CELLS - A 3T-4S step & repeat unit cell obtained by combining four image sensor unit cells each including three transistors and a 3T-4S image sensor including the 3T-4S step & repeat unit cell are provided. The 3T-4S step & repeat unit cell includes first to fourth photodiodes. A first shared image sensor unit cell is obtained by combining the first and second photodiodes with four transistors. A second shared image sensor unit cell is obtained by combining the third and fourth photodiodes with four transistors. Signals corresponding to images incident onto the first and second photodiodes are output through a first common detection line. Signals corresponding to images incident onto the third and fourth photodiodes are output through a second common detection line. A terminal of each of the four photodiodes is connected to a first voltage source. Conversion voltages corresponding to image signals incident onto two photodiodes via green filters are output through a common detection line. Conversion voltages corresponding to image signals incident onto the other two photodiodes via red and blue filters are output through another common detection line.08-12-2010
20090072122IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - An image sensor 03-19-2009
20090072125Solid-state imaging apparatus and method for producing the same - A solid-state imaging apparatus includes a plurality of photosensitive cells, and a driving unit provided for driving the plurality of photosensitive cells. Each photosensitive cell includes a photodiode formed to be exposed on a surface of a semiconductor substrate for the purpose of accumulating signal charge obtained by subjecting incident light to photoelectric conversion, a transfer transistor for transferring signal charge accumulated by the photodiode, a floating diffusion layer for temporarily accumulating signal charge transferred by the transfer transistor, and an amplifier transistor for amplifying signal charge temporarily accumulated in the floating diffusion layer. A source/drain diffusion layer provided in the amplifier transistor is covered with a salicide layer, and the floating diffusion layer is formed to be exposed on a surface of the semiconductor substrate.03-19-2009
20090072123Solid-state imaging device and drive control method for the same - A CMOS sensor has unit pixels each structured by a light receiving element and three transistors, to prevent against the phenomenon of saturation shading and the reduction of dynamic range. The transition time (fall time), in switching off the voltage on a drain line shared in all pixels, is given longer than the transition time in turning of any of the reset line and the transfer line. For this reason, the transistor constituting a DRN drive buffer is made proper in its W/L ratio. Meanwhile, a control resistance or current source is inserted on a line to the GND, to make proper the operation current during driving. This reduces saturation shading amount. By making a reset transistor in a depression type, the leak current to a floating diffusion is suppressed to broaden the dynamic range.03-19-2009
20090072120CIRCUITS AND METHODS ALLOWING FOR PIXEL ARRAY EXPOSURE PATTERN CONTROL - An image processing system includes an image sensor circuit. The image sensor circuit is configured to obtain an image using a type of shutter operation in which an exposure pattern of a pixel array is set according to exposure information that changes over time based at least partially on charge accumulated in at least a portion of the pixel array. An image sensor circuit includes a pixel array and one or more circuits. The one or more circuits are configured to update exposure information based at least partially on one or more signals output from the pixel array, and to control an exposure pattern of the pixel array based on the exposure information. A pixel circuit includes a first transistor connected between a photodiode and a sense node, and a second transistor connected between an exposure control signal line and a gate of the first transistor.03-19-2009
20090200451COLOR PIXEL ARRAYS HAVING COMMON COLOR FILTERS FOR MULTIPLE ADJACENT PIXELS FOR USE IN CMOS IMAGERS - Image sensors and methods of operating image sensors. An image sensor includes an array of pixels and an array of color filters disposed over the array of pixels such that each different color filter is disposed over multiple pixels. A method of operating an image sensor including an array of two by two blocks of single color pixels includes determining a level of incident light, determining an incident light value corresponding to the level of incident light and comparing the incident light value to a predetermined threshold value. If the incident light value is less than the predetermined threshold value, a combined signal is read from the two by two blocks. If the incident light value is less than the predetermined threshold value, an individual signal is read from each pixel.08-13-2009
20090084938Sensor panel and image detecting device - The present invention provides a sensor panel and an image detecting device that can suppress generation of artifacts and an increase in noise. A sensor panel has an image detecting region formed from plural image sensor portions, data lines reading signals out from the image sensor portions, bidirectional diodes disposed at a peripheral edge of the image detecting region and connected to the data lines, and, at an upper layer of the bidirectional diodes, a semiconductor film that generates charges due to irradiation of electromagnetic waves. At the sensor panel, shield electrodes, that are connected to a common line, are disposed between the bidirectional diodes and the semiconductor film.04-02-2009
20090084940SENSING LIGHT AND SENSING THE STATE OF A MEMORY CELL - A light-to-frequency converter includes a switch (04-02-2009
20110139962SOLID-STATE IMAGE PICKUP DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS - Disclosed herein is a solid-state image pickup device, including: a plurality of pixels each composed of a photoelectric conversion element formed in a semiconductor substrate for generating and accumulating signal electric charges corresponding to a light quantity of incident light, and an electric charge reading portion formed on a front surface side of the semiconductor substrate for reading out the signal electric charges generated and accumulated in the photoelectric conversion element; a wiring for a substrate potential formed on a back surface side, becoming a light receiving surface, of the semiconductor substrate for supplying a desired voltage to the semiconductor substrate; and a back surface side contact portion through which the wiring for a substrate potential and the semiconductor substrate are electrically connected to each other.06-16-2011
20090101798Circuit Providing Low-Noise Readout - Systems, methods, and apparatuses that may be employed to reduce noise in an electronic circuit are described. Systems are provided that include a circuit, wherein the circuit is configured to provide an active reset technique and an active column sensor readout technique. Methods for reducing circuit noise are also provided. The methods include providing a circuit configured to perform an active reset technique and an active column sensor readout technique. The methods further provide that the active reset technique and the active column sensor readout technique are both performed by the circuit. An imaging apparatus is provided that includes an array of photo-sensitive pixels, wherein each of the pixels can include a circuit configured to provide an active reset technique and an active column sensor readout technique. The active reset technique and the active column sensor readout technique are executable on the circuit.04-23-2009
20090101799IMAGE SENSOR, MULTI-CHIP MODULE TYPE IMAGE SENSOR AND CONTACT IMAGE SENSOR - The invention is to suppress a loss in image quality resulting from a sensitivity difference among different colors and to suppress an increase in a chip area. The invention provides for example an image sensor including three light detecting element rows respectively having R, G and B color filters on light detecting apertures, in which the light detecting element in the G light detecting element row has a light detecting area larger than that of the light detecting element in other B and R light detecting element rows and centers of gravity of light detecting parts of the light detecting elements in the respective light detecting element rows are arranged with a constant pitch (pitch Q) among the light detecting element rows and in which the G light detecting element row with a larger light detecting area in the light detecting element is not positioned as an end row among the R, G and B light detecting element rows but as a central light detecting element row.04-23-2009
20080290253Image Sensor - An image sensor has a plurality of pixels, each pixel having a photodiode (11-27-2008
20090200452IMAGE SENSOR WITH BURIED SELF ALIGNED FOCUSING ELEMENT - An image sensor includes an optical sensor region, a stack of dielectric and metal layers, and a buried focusing layer. The optical sensor is disposed within a semiconductor substrate. The stack of dielectric and metal layers are disposed on the semiconductor substrate above the optical sensor region. The metal layers include optical pass-throughs aligned to expose an optical path through the stack form a top dielectric layer through to the optical sensor region. The buried focusing layer is disposed over a conforming metal layer of the metal layers within the stack. The buried focusing layer includes a curved surface conformed by the optical pass-through of the conforming metal layer to focus light onto the optical sensor region.08-13-2009
20090230289Pixel Structure Having Shielded Storage Node - A pixel structure having a shielded storage node. A pixel comprises a sample transistor coupled to a light detecting stage. The sample transistor comprises an inner junction region surrounding and coupled to a storage node and a gate disposed around at least three sides of the inner junction region that operates as a charge barrier to shield the storage node. A memory capacitor is coupled to the storage node.09-17-2009
20090230288METHOD FOR THE OPERATION OF A PHOTOELECTRIC SENSOR ARRAY - A method for operating a sensor array of pixels which each generate a content corresponding to light incident thereon over an exposure period includes the following operations. The pixels are arranged into first and second regions and are reset such that the contents are cleared. The pixels are then exposed to receive light for a first exposure period. The exposure is then interrupted during which the content of each pixel in the first region is read. The pixels are then exposed to receive light for a second exposure period. The exposure is then interrupted during which the content of each pixel in the second region is read. The exposing and interrupting are performed without resetting the pixels such that the read content of each first region pixel depends on the first exposure period and the read content of each second region pixel depends on the first and second exposure periods.09-17-2009
20090001254RADIATION IMAGE DETECTOR - A radiation image detector is provided. The radiation image detector is constituted by: a photoconductive layer that generates charges when electromagnetic waves are irradiated thereon; a common electrode to which a predetermined voltage is applied, provided on one side of the photoconductive layer; a plurality of divided electrodes that output signals corresponding to charges which are generated within the photoconductive layer, provided on the other side of the photoconductive layer; and protective layers that cover the edges of the divided electrodes, the edges being the side surfaces and portions of surfaces of the divided electrodes, which are continuous with the side surfaces, that face the photoconductive layer. The interfaces between the protective layers and the photoconductive layer are smooth surfaces across the entireties thereof.01-01-2009
20090242740SOLID STATE IMAGING DEVICE, METHOD OF DRIVING SOLID STATE IMAGING DEVICE, AND IMAGE PICKUP APPARATUS - A solid-state imaging device which includes a pixel unit, a plurality of pixels in the pixel unit which are two dimensionally arranged in rows and columns and each include a photoelectric conversion element and a reset element, a driver unit which sequentially applies selective scanning to each respective row of the pixel unit, a mode switching circuit, where the mode switching circuit is configured to charge a portion of the pixels in the pixel unit and to apply an intermediate voltage to a gate of each reset element in the non-charged pixels.10-01-2009
20090242738METHOD AND APPARATUS EMPLOYING DYNAMIC ELEMENT MATCHING FOR REDUCTION OF COLUMN-WISE FIXED PATTERN NOISE IN A SOLID STATE IMAGING SENSOR - An imager having a switching circuit that couples pixel columns to different sample and hold circuits to reduce the noticeability of column-wise fixed pattern noise. A controller randomly couples a pixel column to a sample and hold circuit, therefore fixed pattern noise emanating from a particular sample and hold circuit is not always associated with a single pixel column. Therefore the visual perception of fixed pattern noise associated with a particular sample and hold circuit is reduced.10-01-2009
20120104234IMAGE PICKUP CIRCUIT - An image pickup circuit including a plurality of circuit blocks. Each of the plurality of circuit blocks includes a plurality of comparing elements, a single counter, and a plurality of storage units. Each of the comparing elements compares a pixel signal supplied through a vertical signal line connected to vertically aligned pixels in a plurality of pixels arranged in a matrix, and a slope signal whose voltage is changed from an initial voltage at a constant slope. The counter counts an elapsed time since a voltage of the slope signal starts to change from the initial voltage. Each of the storage units stores a count value obtained by the counter in accordance with a comparison result of the comparator, the count value corresponding to an elapsed time until the voltage of the slope signal is changed from the initial voltage to a voltage coinciding with the pixel signal.05-03-2012
20120104233SOLID-STATE IMAGING DEVICE AND METHOD OF DRIVING THE SAME - A solid-state imaging device counts down clock pulses until a comparator indicates a predetermined comparison result using a counter while comparing, in the comparator, a reset component outputted from one of pixel circuits which is yet to receive light with a reference signal, and holds in a latch a value indicated by the counter as a result of the count down. The solid-state imaging device counts up, after presetting the value held in the latch to the counter, the clock pulses until the comparator indicates a predetermined comparison result using the counter while comparing, in the comparator, a signal component outputted from one of the pixel circuits which has received light with the reference signal, and outputs a value indicated by the counter as a result of the count up as a digital signal that indicates an amount of light received by the one of the pixel circuits.05-03-2012
20120104232IMAGE SENSOR HAVING SUB-SAMPLING FUNCTION - An image sensor includes, inter alia, a pixel array, read-out circuit blocks, and switching units. The pixel array includes unit pixels arranged in rows and columns. Two or more read-out circuit blocks sample, amplify, and perform analog-to-digital conversion on unit pixel data to read image data of the pixel array. The switching units establish connection between column lines of the pixel array and the read-out circuit blocks. The switching units establish connection between the column lines of the pixel array and the read-out circuit blocks such that data of all of the sampled pixels in a sub-sampling mode is processed by less than all of the read-out circuit blocks.05-03-2012
20120104231DUAL SPEED READOUT INTEGRATED CIRCUIT FOR HIGH SPATIAL AND TEMPORAL RESOLUTION APPLICATIONS - A dual speed Read-Out Integrated Circuit employs a native pixel array with associated high resolution integration circuits for each pixel and a superpixel array created within the native pixel array by combination of native pixels for charge sharing integration in reduced resolution integration circuits simultaneously with the integration of the high resolution integration circuits. Switching control for readout of the high resolution integration circuits is accomplished at a first frame rate and switching control for readout of the reduced resolution integration circuits is accomplished at a second higher frame rate.05-03-2012
20120104230Image Pick-Up Module And Method For Producing An Image Pick-Up Module - An image pick-up module and method for producing an image pick-up module. An image pick-up module, particularly for installation in an endoscope, the image pick-up module having an electronic image sensor, a first circuit board, a second circuit board and a cable.05-03-2012
20120104228PIXEL CIRCUIT, IMAGING INTEGRATED CIRCUIT, AND METHOD FOR IMAGE INFORMATION ACQUISITION - A pixel circuit uses two storage transistors to store two image signal samples, which include a reference signal produced by background noise of the pixel circuit and a signal produced by optical exposure of a photodetector and the background noise of the pixel circuit. An imaging integrated circuit uses a pixel circuit array, which may contain a number of such pixel circuits, and a charge acquisition circuit configured to read out image information obtained by the pixel circuit array. The charge acquisition circuit uses a first amplifier and a serially connected differential integrator that includes a second amplifier, a first differential integrator section and a second differential integrator section for the read out. A method for image information acquisition involves obtaining image information using the pixel circuit array and reading out the image information obtained by the pixel circuit array using the charge acquisition circuit.05-03-2012
20090242735SOLID-STATE IMAGE PICKUP DEVICE AND MASK MANUFACTURING METHOD - A solid-state image pickup device includes: a light receiving region where photoelectric conversion elements are two-dimensionally arranged; and a microlens layer which has microlenses that introduce incident light into the photoelectric conversion elements. The microlens layer has a plurality of regions each having different microlens pitches. At least one region has a plurality of microlenses, and a pitch of the microlenses is different from a pitch of the photoelectric conversion elements.10-01-2009
20090256059Solid state focal plane array for hyperspectral imaging applications - A focal plane array suitable for use in hyperspectral imaging applications is provided. The focal plane array comprises pixels comprising arrays of photodiodes, wherein each photodiode in each array is selectively sensitive to a different wavelength of a set of wavelengths.10-15-2009
20090256061Image sensors with enhanced charge transmission characteristics - An image sensor includes photoelectric conversion elements formed adjacent to each other on a substrate. Two transmission elements transmit charge accumulated in two adjacent photoelectric conversion elements to a first floating diffusion region, and another two transmission elements transmit charge accumulated in the other two photoelectric conversion elements to a second floating diffusion region. The first floating diffusion region is electrically connected to the second floating diffusion region. A plurality of readout elements read out the charge transmitted to the first and the second floating diffusion regions. The image sensor also includes a dummy gate group including at least one dummy gate arrayed substantially parallel to a readout gate of the plurality of readout elements.10-15-2009
20100264297PROXIMITY-TYPE IMAGING DEVICE AND IMAGING FILTER - A proximity-type imaging device includes an image sensor and an angle limiting filter. The image sensor performs photoelectric conversion for light transmitted from a subject using plural pixels, so as to capture the subject. The angle limiting filter includes a transparent glass substrate and a light shielding film which is formed with openings having one-to-one correspondence with the pixels and which is provided on the glass substrate. The angle limiting filter is disposed on the image sensor and limits an incidence angle of light incident to the image sensor to such an angle range that the light is incident from each opening to the corresponding pixel. The condition10-21-2010
20100264296Mixed analog and digital pixel for high dynamic range readout - An improved CMOS pixel with a combination of analog and digital readouts to provide a large pixel dynamic range without compromising low-light performance using a comparator to test the value of an accumulated charge at a series of exponentially increasing exposure times. The test is used to stop the integration of photocurrent once the accumulated analog voltage has reached a predetermined threshold. A one-bit output value of the test is read out of the pixel (digitally) at each of the exponentially increasing exposure periods. At the end of the integration period, the analog value stored on the integration capacitor is read out using conventional CMOS active pixel readout circuits.10-21-2010
20100148035ROW DRIVEN IMAGER PIXEL - An imaging system includes a pixel that does not require a row select transistor. Instead, an operating voltage is selectively provided to the pixel's readout circuitry, and the readout circuitry provides output signals based on charge or voltage of a storage node. The operating voltage can be selectively provided to each row of a pixel array by a row driver. Each pixel includes a source follower transistor that provides an output signal on a column output line for readout. An anti-blooming transistor may be linked to each pixel's photosensor to provide an overflow path for electrons during charge integration, prior to transfer of charge to the pixel's storage node by a transfer transistor. Electrons not produced by an image are introduced to the photosensor prior to image acquisition, filling traps in the photosensor to reduce image degradation.06-17-2010
20100155576MULTI-COLOR CMOS PIXEL SENSOR WITH SHARED ROW WIRING AND DUAL OUTPUT LINES - An array of multicolor CMOS pixel sensors has a plurality of photosensors per pixel, each photosensor coupled to a single sense node through a select transistor having a select input, each pixel sensor including a reset transistor coupled to the sense node and having a reset input, an amplifier coupled to the sense node and a row-select transistor coupled to the amplifier. The select inputs and the reset inputs for pixel sensors in a pair of adjacent rows are coupled to select signal lines and reset signal lines associated with the pair of rows. The amplifier transistors in individual columns of each row are coupled to a column output line through a row-select transistor having a row-select input. The row-select inputs for pixel sensors in each row of the array are coupled to a row-select line associated with the row.06-24-2010
20100176272PHOTOELECTRIC CONVERSION DEVICE, IMAGE CAPTURING SYSTEM, AND METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE - A photoelectric conversion device includes a photoelectric conversion unit which is arranged in a semiconductor substrate, a charge holding portion which is arranged in the semiconductor substrate and temporarily holds a charge generated by the photoelectric conversion unit, a first transfer electrode which is arranged at a position above the semiconductor substrate to transfer a charge generated by the photoelectric conversion unit to the charge holding portion, a charge-voltage converter which is arranged in the semiconductor substrate and converts a charge into a voltage, and a second transfer electrode which is arranged at a position above the semiconductor substrate to transfer a charge held by the charge holding portion to the charge-voltage converter, and the first transfer electrode is arranged to cover the charge holding portion, and not to overlap the second transfer electrode when viewed from a direction perpendicular to the upper surface of the semiconductor substrate.07-15-2010
20090078855Imaging sensor having microlenses of different radii of curvature - The present invention provides an image sensor which comprises improved microlenses to cope with different optical requirements for oblique incident light or different components of light. In one embodiment, the image sensor comprises at least two microlenses having different radii of curvature. In another embodiment, the image sensor comprises at least one asymmetrical microlens.03-26-2009
20090078854Optical Writing Device and Method of Manufacturing the Same - A plurality of photo emitters are arrayed on a transparent substrate in a first direction to form at least one photo emitter array. An electrode is provided on the substrate and electrically connected to the photo emitters in common. A dimension of the electrode in a second direction perpendicular to the first direction is smaller than a dimension of the substrate in the second direction.03-26-2009
20100213351SOLID STATE IMAGE SENSOR AND IMAGE SENSING APPARATUS INCORPORATED WITH THE SAME - A solid state image sensor and an image sensing apparatus incorporated with the solid state image sensor include: pixel arrays each provided with pixels, and an accumulating section e.g. a capacitor CX which sums up and accumulates signal charges obtained by exposure of an object with respect to a corresponding color at different timings when the signal charges are obtained by the pixels of each of the pixel arrays. A reset noise of a converting floating diffusion is outputted after the converting floating diffusion is reset. Thereafter, a summation of the reset noise, and the signal charges accumulated in the accumulating section is outputted.08-26-2010
20100187401SOLID-STATE IMAGE PICK-UP DEVICE AND PIXEL SIGNAL READOUT METHOD - A solid-state image pick-up device and a method of reading out a pixel signal thereof are provided, and the solid-state image pick-up device provides a large dynamic range without an increase in the area of a pixel. Plural pixels are arranged therein. Each pixel includes a first potential well PW07-29-2010
20100187404MATERIALS, SYSTEMS AND METHODS FOR OPTOELECTRONIC DEVICES - A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.07-29-2010
20100258707PHOTODIODE ARRAY AND IMAGE PICKUP DEVICE USING THE SAME - A photodiode array includes a plurality of photodiodes arranged in a single semiconductor laminate including a first conductivity-type semiconductor layer and an absorption layer overlying the first conductivity-type semiconductor layer. The photodiode array also includes a functional portion among the photodiodes in a predetermined proportion. The functional portion acts as a monitor light receiving portion and/or a charge sweep portion. Each of the photodiodes and functional portion has a second conductivity-type region reaching the absorption layer from the surface of the semiconductor laminate and an electrode in ohmic contact with the second conductivity-type region.10-14-2010
20100258708METHOD AND SYSTEM FOR LIDAR USING QUANTUM PROPERTIES - A method and system for at least three dimensional imaging comprising a processor for processing information; at least one photon light source generating a beam of light; a modulator for modulating the light of the at least one photon light source; a plurality of first receivers operative to detect the influence of a subject on the beam; the plurality of first receivers being operatively connected to the processor and operating to transmit nonspatial information to the processor; the plurality of first receivers being spaced at known, different distances from the subject, whereby comparison of each of the outputs of the plurality of first receivers provides three dimensional information concerning the subject; the processor operating to correlate the outputs of the plurality of first receivers with spatial information derived from the modulated light at correlating intervals of time to create a three dimensional image of the subject.10-14-2010
20090072124VEHICULAR IMAGE SENSING SYSTEM - An image sensing system for a vehicle includes an imaging sensor comprising a two-dimensional array of light sensing photosensor elements formed on a semiconductor substrate. The imaging sensor is disposed at an interior portion of the vehicle, and may be at or proximate to an interior rearview mirror assembly of the vehicle. The system includes a logic and control circuit comprising an image processor for processing image data derived from the imaging sensor. The image sensing system may identify objects of interest based on spectral differentiation or by comparing over successive frames image data associated with objects in the forward field of view of the image sensor or by objects of interest being at least one of qualified and disqualified based at least in part on object motion in the field of view of the imaging sensor.03-19-2009
20100176273Image pickup element and image pickup device - An image pickup element includes a light-receiving portion having a matrix arrangement formed by disposing first-direction arrays, each having photoelectric conversion portions arranged in a first direction with a predetermined gap maintained therebetween, in a second direction orthogonal to the first direction, and micro-lenses provided above the light-receiving portion. A certain first-direction array in the matrix arrangement is provided with a pair of photoelectric conversion portions that optically receive, via a pair of micro-lenses, photographic-subject light beams passing through a pair of segmental regions in an exit pupil of a photographic optical system, the pair of segmental regions being disposed biasedly in opposite directions from each other in the first direction. The pair of micro-lenses is disposed such that light axes thereof extend through vicinities of edges of the pair of photoelectric conversion portions, the edges being the farthest edges from each other in the first direction.07-15-2010
20100219328Moveable Sensor Array and Method of Detecting Location of Calibration Fault - A printing device comprises a print head, imaging member, and a moveable sensor array. The print head is configured to deliver marking material to the imaging member as it moves in a process direction. The linear sensor array comprises a plurality of photo sensors configured to scan the imaging member. The photo detectors of the linear sensor array define a sensor axis that is substantially perpendicular to the process direction. The linear sensor array is configured to move along the sensor axis between a first position where the sensor array scans one portion of the imaging member and a second position where the sensor array scans another portion of the imaging member. If a fault is detected during calibration of the sensor array, the moveable sensor array may be used to determine whether the source of the fault rests with the imaging member or the sensor array.09-02-2010
20100213350Solid-state imaging device, Imaging device, and semiconductor device - A solid-state imaging device includes: a pixel array unit; a vertical scan unit reading out analog pixel signals from the pixel array unit; an AD conversion unit provided each column for converting the analog pixel signals read out from the pixel array unit into digital data; a data memory unit having a data holding circuit that holds the digital data; a transfer driving unit driving a signal line for data transfer based on data of the data holding circuit; a signal amplification unit receiving the data of the data holding circuit and performs signal amplification; a potential fixing unit fixing an input terminal and/or internal wiring of the signal amplification unit to a predetermined potential; a drive power supply unit on/off-controlling power supply; a scan unit controlling the transfer driving unit to transfer the data to the signal amplification unit; and a drive control unit controlling entire operation.08-26-2010
20100224760IMAGING DEVICE AND METHOD FOR MANUFACTURING SAME, AND IMAGING METHOD - An imaging device includes: an imaging lens; a light receiving element including a light receiving portion configured to sense light transmitted through the imaging lens; and a high refractive index member packed between the imaging lens and the light receiving element and having a higher refractive index than air.09-09-2010
20100243864SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD OF THE SAME, AND ELECTRONIC APPARATUS - A solid-state imaging device includes plural photodiodes which are formed in a photodiode area of a unit pixel with no element separating area interposed therebetween and in which impurity concentrations of pn junction areas are different from each other.09-30-2010
20120193516HIGH DYNAMIC RANGE PIXEL STRUCTURE - A pixel structure comprises a photo-sensitive element PPD for generating charges in response to light and a charge conversion element FD. A first transfer gate TX is connected between the photo-sensitive element PPD and the charge conversion element. A charge storage element PG is connected to the photo-sensitive element PPD. The charge storage element PG has a higher charge storage density than the photo-sensitive element PPD. The charge storage element PG is located on the photo-sensitive element PPD side of the first transfer gate TX and is arranged to collect charges generated by the photo-sensitive element PPD during an integration period. The charge storage element can be a photo gate, photodiode or capacitor. Arrangements are provided with, and without, a potential barrier between the photo-sensitive element PPD and the charge storage element PG.08-02-2012
20120193515IMAGERS WITH DEPTH SENSING CAPABILITIES - An imager may include depth sensing pixels that provide an asymmetrical angular response to incident light. The depth sensing pixels may each include a substrate region formed from a photosensitive portion and a non-photosensitive portion. The depth sensing pixels may include mechanisms that prevent regions of the substrate from receiving incident light. Depth sensing pixel pairs may be formed from depth sensing pixels that have different asymmetrical angular responses. Each of the depth sensing pixel pairs may effectively divide the corresponding imaging lens into separate portions. Depth information for each depth sensing pixel pair may be determined based on the difference between output signals of the depth sensing pixels of that depth sensing pixel pair. The imager may be formed from various combinations of depth sensing pixel pairs and color sensing pixel pairs arranged in a Bayer pattern or other desired patterns.08-02-2012
201002527184T-4S STEP & REPEAT UNIT PIXEL AND IMAGE SENSOR INCLUDING THE UNIT PIXEL - Disclosed are a 4T-4S step & repeat unit pixel used in an image sensor and an image sensor having the same. The 4T-4S step & repeat unit pixel has four diffusion area patterns for photodiodes and three diffusion area patterns for an image signal conversion circuit. An aperture ratio of the image sensor increases in maximum by using four photodiodes arranged in a diagonal direction from each other and three diffusion area patterns arranged between the photodiodes near their edges.10-07-2010
20100252717ACTIVE-PIXEL SENSOR - The invention relates to an active-pixel sensor including an electromagnetic radiation detector, comprising a transistor amplifier, a series memory capacitor and a parallel load capacitor that are driven by the transistor amplifier.10-07-2010
20100219329PHOTOELECTRIC CONVERSION APPARATUS - Provided is a photoelectric conversion apparatus for detecting focus, which provides an increased number of ranging points while suppressing a chip-area increase. In a first mode, signals from a first line sensor L09-02-2010
20110006192OPTICAL SENSOR ARRAY AND OPTICAL SENSOR CIRCUIT - Each optical sensor element includes an upper electrode, a lower electrode, and a light dependent variable resistance element formed of amorphous silicon. Each optical sensor pixel includes: a capacitive element between the lower electrode and a reference voltage line; a first transistor inputting a first power source voltage to a second electrode, connecting a first electrode to the lower electrode, and inputting a second clock to a control electrode; a second transistor inputting a second power source voltage to a second electrode, and connecting a control electrode to the lower electrode; and a third transistor connecting a second electrode to a first electrode of the second transistor, connecting a first electrode to the output line, and inputting a first clock to a control electrode.01-13-2011
20110006191IMAGE CAPTURE APPARATUS AND RADIATION IMAGE CAPTURE SYSTEM - An image capture apparatus includes a plurality of pixels, each including a plurality of thin film transistors (T01-13-2011
20100133419ELECTRONIC ELEMENT WAFER MODULE AND METHOD FOR MANUFACTURING SAME, ELECTRONIC ELEMENT MODULE, OPTICAL ELEMENT WAFER MODULE AND METHOD FOR MANUFACTURING SAME, AND ELECTRONIC INFORMATION DEVICE - A method for manufacturing an electronic element wafer module is provided, the method comprising: a protective resin film forming step of forming a protective resin film on only light openings of the plurality of wafer-shaped optical elements; a light shielding film forming step of filming a light shielding film on an area except for the light openings or an entire area including the light openings; and an optical aperture forming step of removing the protective resin film, or removing the protective resin film and a light shielding film material on the protective resin film, to form an optical aperture structure by the light shielding film at the light openings.06-03-2010
20120241594IMAGE SENSOR WITH DOUBLE INTEGRATION TIME AND CONDITIONAL SELECTION - An image sensor for gathering images at one and the same time at low illumination level and at high illumination level is described. The sensor operates with a double integration time at each frame. Two successive charge transfers from a photodiode to a storage node are performed, the first after a first duration, the second after a second duration different from the first. The potential of the storage node after the first transfer of charge is sampled in a first capacitor of the reading circuit. The potential after a reinitialization of the storage node is sampled in a second capacitor. A level of potential taken after the second transfer is conditionally resampled in the first capacitor. The condition of the resampling is a condition of signal level after the first transfer. This level is applied to the differential amplifier of a ramp-type converter for a short duration of ramp.09-27-2012
20120241590Method for Assembly of Spectroscopic Filter Arrays Using Biomolecules - Spectroscopic filter arrays and methods for making spectroscopic filter arrays are provided. The arrays are formed using a dispersion of filter particles having selected moieties attached to the surface of the particles and a microarray having complementary moieties formed in an array on a substrate, such that each filter particle is attached to a selected region of the microarray. The moiety on the substrate may be RNA or DNA or other molecule. The substrate may be a surface of a photodetector array, a transparent plate that may be placed in registration with the photodetector or a stamp used to transfer the filter array to a photodetector array.09-27-2012
20120241593IMAGE CAPTURING UNIT AND IMAGE CAPTURING DEVICE - An image capturing unit includes: a glass substrate having a first surface and a second surface on an opposite side to the first surface, with a first wiring pattern being provided upon at least the first surface; an image sensor that is electrically connected to the first wiring pattern, and that is mounted upon the first surface of the glass substrate; and a piezoelectric element that is disposed upon the first surface or upon the second surface, and that is electrically connected to the first wiring pattern.09-27-2012
20100127157COMPOUND EYE CAMERA MODULE - A compound eye camera module according to the present invention includes a lens array including at least two lenses; an imaging element having two imaging areas corresponding to the two lenses; a light shielding block having a light shielding wall for separating optical paths of light transmitted through the two lenses; an optical filter for transmitting light of a specific wavelength range among the light transmitted through the two lenses; and a substrate having an opening larger than the optical filter. The imaging areas and the optical filter are located at a position corresponding to the opening. The imaging element is fixed to a face of the substrate opposite to the side of the lens array. The imaging element is in contact with a face of the optical filter which faces the imaging element. The light shielding block is fixed to a face of the optical filter which faces the light shielding block. The optical filter has portions protruding outside both of ends of the imaging element in a direction connecting the two optical axes of the two lenses. The light shielding block is fixed to the protruding portions of the optical filter.05-27-2010
20090230287STACKED IMAGE SENSOR WITH SHARED DIFFUSION REGIONS IN RESPECTIVE DROPPED PIXEL POSITIONS OF A PIXEL ARRAY - A CMOS image sensor or other type of image sensor comprises a sensor wafer and an underlying circuit wafer. The sensor wafer comprises a plurality of photosensitive elements arranged in respective positions of a two-dimensional array of positions in which a subset of the array positions do not include photosensitive elements but instead include diffusion regions each of which is shared by two or more of the photosensitive elements. The sensor wafer is interconnected with the circuit wafer utilizing a plurality of inter-wafer interconnects coupled to respective ones of the shared diffusion regions in respective ones of the array positions that do not include photosensitive elements. The image sensor may be implemented in a digital camera or other type of image capture device.09-17-2009
20090242737SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes a light receiving section (LRS) comprising pixels. The LRS is divided into division regions; a charge transferring section (CTS) transferring charges accumulated in the LRS; an accumulation control electrode provided between the LRS and the CTS transfers charge accumulated in the LRS to the CTS responsive to an accumulation control signal; a monitoring sensor group comprising monitoring sensors respectively provided for the division regions, outputting sensor outputs of the monitoring sensors corresponding to charges amounts of the division regions; a charge detecting circuit outputting a charge detection signal indicating that a predetermined charge quantity is accumulated in at least one of the division regions, based on the sensor outputs from the monitoring sensor group; and a signal control circuit outputting the accumulation control signal in response to the charge detection signal. The charge detecting circuit comprises division region charge detecting sections for the monitoring sensors.10-01-2009
20090189058PHOTOELECTRIC CONVERSION ELEMENT AND IMAGING DEVICE - A photoelectric conversion element is provided and includes: an electrically conductive thin layer; an organic photoelectric conversion layer containing a compound having a partial structure represented by the following formula (I) and a fullerene or a fullerene derivative; and a transparent electrically conductive thin layer.07-30-2009
20090166514Image Sensor - The uppermost metallic wiring layer in light-blocking layers constituted by multilevel metallic wiring that prevents light from impinging on areas other than the light-receiving area of a photodiode in each picture cell is used as a measurement electrode to be directly contacted with a specimen to measure electrical signals. Furthermore, in each picture cell including a circuit for reading out electrical signals collected through the measurement electrode, another circuit for reading out electrical signals generated by the photodiode is provided in an independent or shared form. This configuration enables the photodiode for optical measurements and the measurement electrode for electrical measurements to be provided in every picture cell. Thus, in a hybrid image sensor having an optical measurement function for obtaining optical information due to specimen and an electrical measurement functions for obtaining electrical information due to the specimen, the spatial resolution of both types of two-dimensional images can be simultaneously improved.07-02-2009
20080308712IMAGE CAPTURING APPARATUS - An image capturing apparatus is provided that simultaneously captures a visible light image and an infra-red light image in which the same subject is in focus. The image capturing apparatus includes a light receiving section that receives light from a subject; a partial wavelength spectrum diaphragm section that is disposed between the subject and the light receiving section and that includes a light passing section that allows light in a first wavelength spectrum and light in a second wavelength spectrum to pass through and a filter section, which is disposed on a periphery of the light passing section, that allows the light in the first wavelength spectrum to pass through but does not allow the light in the second wavelength spectrum to pass through; and an image generating section that generates a first image based on the light in the first wavelength spectrum received by the light receiving section via the light passing section and the filter section and generates a second image based on the light in the second wavelength spectrum received by the light receiving section via the light passing section.12-18-2008
20080283729Apparatus and Method for Processing Video Signal, Imaging Device and Computer Program - A video signal processing apparatus includes an image sensor and an infrared component remover. The image sensor receives light through a color filter, the color filter including long-pass filters only or a combination of a long-pass filter and an all-transmissive filter. The long-pass filters in the color filter a visible-light transmissive long-pass filter for permitting a visible-light component and an infrared-light component to pass therethrough and an infrared-light transmissive long-pass filter for permitting an infrared-light component to pass selectively therethrough. The infrared-light component remover removes an infrared-light component contained in a signal having passed through the visible-light transmissive long-pass filter, with transmittance data of an infrared-light region of the visible-light transmissive long-pass filter and the infrared-light transmissive long-pass filter applied.11-20-2008
20100276572SEMICONDUCTOR IMAGE SENSOR MODULE AND METHOD OF MANUFACTURING THE SAME - A CMOS type semiconductor image sensor module wherein a pixel aperture ratio is improved, chip use efficiency is improved and furthermore, simultaneous shutter operation by all the pixels is made possible, and a method for manufacturing such semiconductor image sensor module are provided. The semiconductor image sensor module is provided by stacking a first semiconductor chip, which has an image sensor wherein a plurality of pixels composed of a photoelectric conversion element and a transistor are arranged, and a second semiconductor chip, which has an A/D converter array. Preferably, the semiconductor image sensor module is provided by stacking a third semiconductor chip having a memory element array. Furthermore, the semiconductor image sensor module is provided by stacking the first semiconductor chip having the image sensor and a fourth semiconductor chip having an analog nonvolatile memory array.11-04-2010
20090108176Global shutter pixel circuit with transistor sharing for CMOS image sensors - A pixel circuit having a global shutter and transistor circuit sharing for CMOS image sensors. In one embodiment, a shared circuit includes a reset transistor, an amplifier transistor, and a readout transistor. At least two photodiode signal generation circuits share the shared circuit, wherein each signal generation circuit includes a capture transistor, a hold transistor, and a transfer transistor. Each pixel generation circuit may also include a photodiode reset transistor. In an alternate embodiment, each signal generation circuit does not include a separate transfer transistor, instead, the transfer transistor is part of the shared circuit.04-30-2009
20100294916METHOD AND SYSTEM FOR CREATING AN IMAGE USING THE QUANTUM PROPERTIES OF SOUND OR QUANTUM PARTICLES - A preferred embodiment comprises a method and system for generating an image of a subject or area comprising a processor; at least one incoherent light source which illuminates the subject or area; a first receiver for receiving light reflected from the subject or area operatively connected to the processor; a second receiver for receiving light from at least one incoherent light source operatively connected to the processor; the first receiver collecting the amount of light reflected from the subject and transmit a value at specific intervals of time; the second receiver comprising a second detector which detects and transmits spatial information regarding the incoherent light source independent of any data concerning the subject at specific intervals of time; wherein the processor correlates the value transmitted by the first receiver with the spatial information derived from the second receiver at correlating intervals of time to create an image of the subject or area. Alternatively, sound or quantum particles may replace the incoherent light source.11-25-2010
20120032066Sensing Devices and Manufacturing Methods Therefor - A sensing device is provided. The sensing device includes a sensing pixel array and a memory unit. The sensing pixel array is formed in a substrate and includes a plurality of pixels for sensing light. The substrate has a first side and a second side opposite to the first side and receives the light through the first side for sensing the light. The memory unit is formed on the second side of the substrate for memorization.02-09-2012
20110114823IMAGING DEVICE AND METHOD FOR HIGH-SENSITIVITY OPTICAL SCANNING AND INTEGRATED CIRCUIT THEREFOR - An inspection system includes a CMOS integrated circuit having integrally formed thereon an at least two dimensional array of photosensors and providing an inspection output representing an object to be inspected. A defect analyzer is operative to receive the inspection output and to provide a defect report.05-19-2011
20100320364OPTICAL LENS SYSTEM AND METHOD FOR MICROFLUIDIC DEVICES - An apparatus for imaging one or more selected fluorescence indications from a microfluidic device. The apparatus includes an imaging path coupled to least one chamber in at least one microfluidic device. The imaging path provides for transmission of one or more fluorescent emission signals derived from one or more samples in the at least one chamber of the at least one microfluidic device. The chamber has a chamber size, the chamber size being characterized by an actual spatial dimension normal to the imaging path. The apparatus also includes an optical lens system coupled to the imaging path. The optical lens system is adapted to transmit the one or more fluorescent signals associated with the chamber.12-23-2010
20110127409SOLID-STATE IMAGE PICKUP DEVICE, A METHOD OF DRIVING THE SAME, A SIGNAL PROCESSING METHOD FOR THE SAME, AND IMAGE PICKUP APPARATUS - A solid-state image pickup device including: a pixel array portion; a differential circuit; a reset voltage supplying section; and a common phase feedback circuit.06-02-2011
20110127408SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS - A solid-state imaging device includes: a pixel having a photodiode and a pixel transistor; a first isolation region using a semiconductor region containing impurities formed between neighboring photodiodes; and a second isolation region using an semiconductor region containing impurities formed between the photodiode and the pixel transistor, wherein an impurity concentration of the first isolation region is different from an impurity concentration of the second isolation region.06-02-2011
20110001036 SYSTEM FOR IMAGING AN OBJECT01-06-2011
20110001038IMAGE SENSOR DEVICE WITH SILICON MICROSTRUCTURES AND FABRICATION METHOD THEREOF - An image sensor device is disclosed. The image sensor device includes a semiconductor substrate having a first pixel region and a second pixel region. A first photo-conversion device is disposed within the first pixel region of the semiconductor substrate to receive a first light source. A second photo-conversion device is disposed within the second pixel region of the semiconductor substrate to receive a second light source different from the first light source. The surface of the semiconductor substrate corresponding to the first photo-conversion device and the second photo-conversion device has a first microstructure and a second microstructure, respectively, permitting a reflectivity of the first pixel region with respect to the first light source to be lower than a reflectivity of the second pixel region with respect to the first light source. The invention also discloses a fabrication method of the image sensor device.01-06-2011
20110001039A/D CONVERTER CIRCUIT AND SOLID-STATE IMAGING DEVICE - Provided are a solid-state imaging device and A/D converter circuit comprising: series-connected capacitative elements; a voltage comparator circuit comparing the output of the capacitative element C01-06-2011
20110001037IMAGE SENSOR WITH INTEGRATION TIME COMPENSATION - A photosensitive apparatus including a plurality of photosensor chips and a first common line for applying a first external integration signal to each of the plurality of photosensor chips. Each photosensor chip includes a first set of photosensors having an edge pixel and an interior pixel and a control portion for accepting the first external integration signal, the first external integration signal causing an edge pixel integration signal and an interior pixel integration signal for the first set of photosensors. The control portion includes a first signal adjuster effectively altering the first external integration signal to cause the edge pixel integration signal and the interior pixel integration signal for the first set of photosensors.01-06-2011
20110108707ACOUSTIC ASSISTED PHASE CONJUGATE OPTICAL TOMOGRAPHY - A light microscope for imaging a sample containing one or more fluorescent agents, comprising a source for generating acoustic waves that are focused at a focus in the sample, wherein the acoustic waves frequency shift a frequency of light passing through the focus, thereby creating a frequency shifted light beam; at least one spatial light modulator (SLM) positioned to illuminate the sample with an output beam that is an optical phase conjugate of the frequency shifted light beam, wherein the output beam is a reflection of a first reference beam off one or more pixels of the SLM, and the pixels are for modulating the first reference beam to create the output beam; and a detector positioned to detect fluorescence generated by the output beam exciting the fluorescent agents at the focus in the sample, thereby imaging the sample.05-12-2011
20110108704Image sensors and methods of operating the same - Image sensors and methods of operating the same. An image sensor includes a pixel array including a plurality of pixels. Each of the plurality of pixels includes a photo sensor, the voltage-current characteristics of which vary according to energy of incident light, and that generates a sense current determined by the energy of the incident light; a reset unit that is activated to generate a reference current, according to a reset signal for resetting at least one of the plurality of pixels; and a conversion unit that converts the sense current and the reference current into a sense voltage and a reference voltage, respectively.05-12-2011
20100187403Solid-state image pickup apparatus, electronic apparatus, and method of manufacturing a solid-state image pickup apparatus - Disclosed is a solid-state image pickup apparatus including a photoelectric converter formed on a substrate, a wiring portion formed above the photoelectric converter and constituted of multilayer wirings, and an insulating portion in which the multilayer wirings of the wiring portion are embedded, the insulating portion having a refractive index larger than a silicon oxide.07-29-2010
20110240832CYCLIC A/D CONVERTER, IMAGE SENSOR DEVICE, AND METHOD FOR GENERATING DIGITAL SIGNAL FROM ANALOG SIGNAL - A cyclic A/D converter which can reduce the number of reference voltages for D/A conversion is provided. The cyclic A/D converter (10-06-2011
20100133418QUANTUM DOT OPTICAL DEVICES WITH ENHANCED GAIN AND SENSITIVITY AND METHODS OF MAKING SAME - Optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit an array of conductive regions; and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a method of forming a nanocrystalline film includes fabricating a plurality of nanocrystals having a plurality of first ligands attached to their outer surfaces; exchanging the first ligands for second ligands of different chemical composition than the first ligands; forming a film of the ligand-exchanged nanocrystals; removing the second ligands; and fusing the cores of adjacent nanocrystals in the film to form an electrical network of fused nanocrystals. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused.06-03-2010
20110108708DIGITAL CAMERA WITH MULTIPLE PIPELINE SIGNAL PROCESSORS - A method includes sampling a first intensity of light with a first array of photo detectors of a digital camera. A second intensity of light is sampled with a second array of photo detectors of the digital camera. A first channel processor coupled to the first array of photo detectors generates a first image using first array data which is representative of the first intensity of light sampled by the first array of photo detectors. A second channel processor coupled to the second array of photo detectors generates a second image using second array data which is representative of the second intensity of light sampled by the second array of photo detectors. The first array of photo detectors, the second array of photo detectors, the first channel processor, and the second channel processor are integrated on or in a semiconductor substrate.05-12-2011
20110108703SEGMENTED GUARD STRIP - A semiconductor detector array including a substrate formed of a semiconductor material and defining a detector array surface including first and second opposite facing surfaces and at least one side wall, electrodes operative as anodes and cathodes of the detector array, formed on the respective first and second opposite facing surfaces, electrical insulation formed along at least part of the at least one side wall and at least one segmented electrical conductor formed over at least part of the electrical insulation along the at least part of the at least one side wall.05-12-2011
20090065680Image detecting device - An image detecting device includes a substrate including plural accumulating portions, plural data lines, plural first protection lines, plural first diodes, and plural second diodes. The plural accumulating portions, due to the irradiation of incident electromagnetic waves expressing an image which is an object of detection, charges expressing the image are accumulated. In the plural data lines, the plural accumulating portions are respectively connected individually via switching elements. The plural first protection lines are for protecting a circuit from excess voltage. In the plural first diodes, anodes are connected to a portion of the plural first protection lines respectively, and cathodes are connected to the plural data lines respectively. In the plural of second diodes, cathodes are connected to another portion of the plural first protection lines respectively, and anodes are connected to the plural data lines respectively.03-12-2009
20090065679Imaging apparatus - An imaging apparatus for capturing a synthesized image of a visible-spectrum image and an infrared-spectrum image implements a proper synthesis balance without amplification of the signal of the infrared-spectrum image obtained by a solid-state image sensor or attenuating the visible light incident on the image sensor. A visible light source (03-12-2009
20110031378ELECTROMAGNETIC WAVE RECEPTION DEVICE, IMAGING DEVICE, AND ELECTROMAGNETIC WAVE RECEPTION METHOD - Provided is an electromagnetic wave reception device capable of being downsized and directly and simply (at least at a room temperature) detecting electromagnetic waves in a wider bandwidth including the terahertz range. The electromagnetic wave reception device that obtains charges according to an electric field of the electromagnetic waves incident on a semiconductor substrate includes: a high charge-density region provided on the semiconductor substrate and having a first charge density; a conductive region covering the high charge-density region via an insulation region; and a low charge-density region provided adjacent to the high charge-density region on the semiconductor substrate and having a second charge density lower than the first charge density, wherein the low charge-density region is connected to a charge detecting circuit that is not illustrated.02-10-2011
20110031376SOLID-STATE IMAGE PICKUP ELEMENT, METHOD OF MANUFACTURING THE SAME, AND IMAGE PICKUP APPARATUS INCLUDING THE SAME - A solid-state image pickup element 02-10-2011
20110042551IMAGE SENSOR - An image sensor includes a charge pump circuit supplying first to third signals having sequentially decreasing voltage levels, a reset transistor having a drain and a gate connected with the charge pump circuit to form a diode connection and receiving the first to third signals, a photodiode generating photocharges, a transfer transistor forming a series connection between the photodiode and the reset transistor, a floating diffusion region forming a parallel connection between the transfer transistor and the reset transistor and storing the photocharges, and a drive transistor connected with the floating diffusion region, the reset transistor, a power supply voltage terminal, and a unit pixel output terminal. A gate of the transfer transistor receives a turn-off voltage if the first or second signal is supplied, and receives a turn-off voltage or a turn-on voltage if the third signal is supplied.02-24-2011
20110042550Image Sensor Cell for Night Vision - An image sensor cell (02-24-2011
20110042552SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a solid-state imaging device with an array arrangement of unit pixels including photoelectric conversion parts configured to generate signal charges by photoelectric conversion and a signal scanning circuit part, the signal scanning circuit part being provided on a second semiconductor layer different from a first semiconductor layer including the photoelectric conversion parts, the second semiconductor layer being stacked above the front side of the first semiconductor layer via an insulating film, and the first semiconductor layer being so configured that a pixel separation insulating film is buried in pixel boundary parts and read transistors configured to read signal charges generated by the photoelectric conversion parts are formed at the front side of the first semiconductor layer.02-24-2011
20110114822PHOTOELECTRIC CONVERSION APPARATUS AND IMAGE PICKUP SYSTEM USING THE APPARATUS - A photoelectric conversion apparatus includes a first block line through which an optical signal is output and a second block line through which a noise signal superimposed on the optical signal is output. The photoelectric conversion apparatus also includes a switch used to control a connection between the first block line and the second block line.05-19-2011
20110079707IMAGE PICKUP ELEMENT PERFORMING IMAGE DETECTION OF HIGH RESOLUTION AND HIGH IMAGE QUALITY AND IMAGE PICKUP APPARATUS INCLUDING THE SAME - In a pixel part, in a first active region, a photodiode and a transferring transistor are formed. In a second active region, a resetting transistor is formed. In a pixel part, in a first active region, a photodiode and a transferring transistor are formed. In a second active region, an amplifying transistor is formed. The first and second active regions are respectively the same in shape in image pixel parts. The resetting transistor and the amplifying transistor are shared by the pixel parts.04-07-2011
20110084196PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM USING THE PHOTOELECTRIC CONVERSION APPARATUS - A photoelectric conversion apparatus includes an effective pixel region for outputting a signal according to light, and an optical black pixel region for outputting a reference signal, wherein, in the optical black pixel region, a plug is arranged in an insulating film, and a light shielding film is arranged above the plug and is connected to the plug, such that an upper surface of the plug and an upper surface of the insulating film form the same plane, and wherein, above or below the light shielding film, a titanium film of thickness 5 to 15 nm is arranged.04-14-2011
20100163712SOLID-STATE IMAGING DEVICE - In each photosensitive cell, a photodiode 07-01-2010
20090032680RADIATION DETECTING APPARATUS AND RADIATION DETECTING SYSTEM - A radiation detecting apparatus includes plural pixels each provided with a switching element disposed on an insulating substrate and a conversion element disposed on the switching element, and plural signal wirings arranged in one direction and connected with the plural switching elements, wherein the conversion elements have electrodes separated respectively for the pixels, the switching element is connected with the electrode for each pixel, and both ends of the signal wiring, opposed to each other in a width direction, and both ends of the control wiring, opposed to each other in a width direction are disposed inside of an area of the electrode when seen from above the conversion element.02-05-2009
20110079706QUANTUM TUNNELING PHOTODETECTOR ARRAY - A quantum tunneling photodetector array and a method of generating an image. The photodetector array comprises an array of pairs of opposing first and second electrodes; a photo-sensitive insulating material disposed between the opposing first and second electrodes of the respective pairs; an electrical circuit for detecting photo-assisted quantum tunneling currents between the opposing first and second electrode of the respective pairs.04-07-2011
20110079705Signal Noise Reduction for Imaging in Biological Analysis - A system and method for characterizing contributions to signal noise associated with charge-coupled devices adapted for use in biological analysis. Dark current contribution, readout offset contribution, photo response non-uniformity, and spurious charge contribution can be determined by the methods of the present teachings and used for signal correction by systems of the present teachings.04-07-2011
20100187402METHOD OF PERFORMING HYPERSPECTRAL IMAGING WITH PHOTONIC INTEGRATED CIRCUITS - According to the invention, an integrated hyperspectral imager includes a planar photonic substrate. A plurality of imaging pixel photonic circuits is disposed in a M×N array on the planar photonic substrate. Each imaging pixel photonic circuit includes an input coupler configured to receive a broadband input electromagnetic radiation. A waveguide is optically coupled to the input coupler. A plurality of wavelength filters is optically coupled to the waveguide. Each wavelength filter has a wavelength filter input and a wavelength filter output. Each detector has a detector input optically coupled respectively to each of the wavelength filter outputs. Each detector has a respective detector output. The integrated hyperspectral imager is configured to provide electrical signals that are representative of a hyperspectral image of the received broadband input electromagnetic radiation. A method for recording an image based on a received electromagnetic radiation is also described.07-29-2010
20110147567SiPM Photosensor With Early Signal Digitization - The present invention is a Silicon PhotoMulitplier comprising a plurality of photon detection cell clusters each comprising a plurality of avalanche photodiodes connected in parallel, so that the output of each avalanche photodiode is summed together and applied to a cell cluster output. Each of the plurality of cell cluster outputs is connected to one of a plurality of cluster readout circuits, each of which includes an analog to digital converter that converts an analog representation of the total energy received by a photon detection cell cluster to a digital energy signal. A SiPM Pixel reader circuit is connected to the plurality of cluster readout circuits and configured to generate an overall pixel output by digital processing the plurality of digital energy signals received from the plurality of photon detection cell clusters by way of the plurality of cluster readout circuits. The SIPM pixel reader circuit also receives digital signals representative of timing triggers and the total energy received by a specific photon detection cell cluster and generates an overall SiPM energy signal and overall timing trigger in response to the signals received from the plurality of cluster readout circuits.06-23-2011
20090314928HIGH DYNAMIC RANGE IMAGE SENSOR - An image sensor includes a plurality of pixels, each pixel includes a first photosensitive region that collects charge in response to light and having a first sensitivity; a second photosensitive region that collects charge in response to light and having a second sensitivity that is lower than the sensitivity of the first photosensitive region; and a polarizer spanning the second photosensitive region.12-24-2009
20090218476RADIATION IMAGE PICKUP APPARATUS, ITS CONTROL METHOD, AND RADIATION IMAGE PICKUP SYSTEM - A radiation image pickup apparatus or the like which realizes improvement of noise resistance characteristics when adding pixel signals is provided. For this purpose, the radiation image pickup apparatus has a switching unit which is arranged between a signal wiring and an amplifier and can switch electrical connection among a plurality of signal wirings and electrical connection between a predetermined one of the plurality of signal wirings and the amplifier corresponding thereto. In accordance with mode setting, the switching unit switches a first state where the plurality of signal wirings are electrically connected and the predetermined signal wiring and the corresponding amplifier are electrically disconnected and a second state where the plurality of signal wirings are electrically disconnected and the predetermined signal wiring and the corresponding amplifier are electrically connected.09-03-2009
20100038519Image Sensing Module - An image sensing module includes a carrier and a plurality of image sensing devices, wherein the image sensing devices are electrically connected to the carrier. Each of the image sensing devices has a sensing area, and the sensing areas face different directions. Each of the image sensing devices has a field of view, and there is an overlap between the fields of view of two adjacent image sensing devices. The image sensing module has a wider field of view.02-18-2010
20090032682Semiconductor Device, Module, and Electronic Device - The breakdown voltage between the potential of a terminal and the ground potential (or power supply potential) is improved by increasing the gate width of an MOS transistor included in a switch. Accordingly, another switch and the like are protected even when surge is applied to the terminal. By increasing the gate width of the MOS transistor included in the switch, the size of the other switch does not have to be increased. Therefore, variation in the potential at a node occurring when the other switch attains a non-conductive state from a conductive state can be suppressed. Therefore, a semiconductor device having the electrostatic breakdown voltage improved without influence on processing carried out based on an input potential from an external source, a module including a plurality of such semiconductor devices, and an electronic device including such a module can be provided.02-05-2009
20120241595IMAGE SENSOR WITH VERY HIGH DYNAMIC RANGE - A image sensor includes active pixels for gathering images at very high and very low luminance level. Each pixel includes at least one photodiode, a charge storage node, an electron multiplication amplification structure, a unit for transferring electrons from the photodiode to the structure, a unit for transferring electrons from the amplification structure to the storage node after multiplication, a transistor for reinitializing the potential of the storage node. The pixels are read by a reading circuit which samples the potential of the charge storage node after reinitialization and after transfer of the electrons into the storage node and which provides a corresponding illumination measurement. The sensor furthermore includes a unit for carrying out the integration of charge in two different durations in the course of one and the same frame, and for giving the amplification structure multiplication factors different to the charge integrated in the course of these durations.09-27-2012
20120241591PUMPED PINNED PHOTODIODE PIXEL ARRAY - The present invention relates to a pumped pixel that includes a first photo-diode accumulating charge in response to impinging photons, a second photo-diode and a floating diffusion positioned on a substrate of the pixel. The pixel also includes a charge barrier positioned on the substrate between the first photo-diode and the second photo-diode, where the charge barrier temporarily blocks charge transfer between the first photo-diode and the second photo-diode. Also included is a pump gate positioned on the substrate adjacent to the charge barrier. The pump gate pumps the accumulated charge from the first photo-diode to the second photo-diode through the charge barrier in response to a pump voltage applied by a controller. Also included is a transfer gate positioned on the substrate between the second photo-diode and the floating diffusion. The transfer gate transfers the pumped charge from the second photo-diode to the floating diffusion in response to a transfer voltage applied by a controller.09-27-2012
20100065722METHOD AND DEVICE FOR DETECTING AN OBJECT THAT CAN RETROREFLECT LIGHT - According to the invention, two simultaneous images with different wavelengths (λ03-18-2010
20110174958PHOTOSENSITIVE SENSOR CELL, DETECTOR UNIT, AND IMAGING MEANS - A photosensitive sensor cell includes a photosensitive element with a detection surface for receiving light. The element is manufactured from a material of which at least one electrically measurable quantity is changeable under the influence of light. The element further includes electrodes for making the quantity measurable such that a property of the light can be determined. The element has a pointed shape, which renders a robust decorrelation possible so as to obtain super-resolution.07-21-2011
20110101206Device and Method for the Demodulation of Modulated Electromagnetic Wave Fields - A new pixel in semiconductor technology comprises a photo-sensitive detection region (05-05-2011
20110073751SOLID-STATE IMAGING DEVICE, SOLID-STATE IMAGING DEVICE MANUFACTURING METHOD, ELECTRONIC DEVICE, AND LENS ARRAY - A solid-state imaging device includes: multiple micro lenses, which are disposed in each of a first direction and a second direction orthogonal to the first direction, focus the incident light into the light-receiving surface; with the multiple micro lenses of which the planar shape is a shape including a portion divided by a side extending in the first direction and a side extending in the second direction being disposed arrayed mutually adjacent to each of the first direction and the second direction; and with the multiple micro lenses being formed so that the depth of a groove between micro lenses arrayed in a third direction is deeper than the depth of a groove between micro lenses arrayed in the first direction, and also the curvature of the lens surface in the third direction is higher than the curvature of the lens surface in the first direction.03-31-2011
20100127158OPTOELECTRONIC SENSOR FOR SAFEGUARDING A HAZARDOUS AREA - An optoelectronic sensor for safeguarding a hazardous area, such as a light grid, has a first and a second sensor part. The two sensor parts are arranged at a spatial distance from one another. Each sensor part has a plurality of transmitting elements for generating transmitted beams and a plurality of receiving elements for receiving the transmitted beams. In this way, a plurality of transmitted beams in opposite directions are formed between the sensor parts. Each sensor part has at least one evaluation circuit, which is coupled to the receiving elements of the respective sensor part. Each evaluation circuit is designed to generate a switch-off signal in a manner dependent on the respectively coupled receiving elements. In a preferred configuration, each sensor part has a plurality of evaluation circuits which are coupled to one another to form a series arrangement of evaluation circuits, and which are additionally coupled to a common data bus connection.05-27-2010
20110079704NANO WIRE BASED PASSIVE PIXEL IMAGE SENSOR - An imaging device including a plurality of photo-sensitive elements suitable for imaging small objects less than 500 nm in size. Each of the photo-sentive elements forms a passive pixel which comprises at least one nanowire structured photodetector and a switch transistor. The nanowire structured photodetector is configured to receive the photons and store the photo generated charges and behave as a waveguide. The switch transistor is formed either in the substrate or at the same body of the nanowire and is configured to allow photo-genereated charges in the nanowire to accumulate when off and to drain from the nanowire when on. The pixel array is configured to allow high resolution imaging by arranging in a penny round pattern.04-07-2011
20120175500SOLID STATE IMAGE PICKUP DEVICE - A solid state image pickup device may include a pixel unit that includes a photoelectric conversion element, the pixel unit including a plurality of pixels that are arranged in a form of a two-dimensional matrix in the pixel unit, each of the plurality of pixels outputting a reset signal and a pixel signal, an analog signal processing unit that includes a first capacitor and a second capacitor, a delay circuit that includes a plurality of delay elements that are connected in a ring form, an A/D converter that detects the number of stages in which the pulse signal has propagated through the delay elements in the delay circuit during a sampling time period and generates a digital signal based on the detected number of stages, and a switching circuit that switches a connection of the first capacitor.07-12-2012
20120175501IMAGE SENSING DEVICE AND MANUFACTURE METHOD THEREOF - An image sensing device for receiving an incident light having an incident angle and photo signals formed thereby is provided. The image sensing device includes a micro prism and a micro lens for adjusting the incident angle and converging the incident light, respectively, a photo sensor for converting the photo signals into electronic signals, and an IC stacking layer for processing the electronic signals.07-12-2012
20120175499PIXEL ARRAY WITH GLOBAL SHUTTER - A pixel includes a photo-sensitive element for generating charges in response to incident radiation. A transfer gate is positioned between the photo-sensitive element and a sense node for controlling transfer of charges to the sense node. A reset switch is connected to the sense node for resetting the sense node to a predetermined voltage. A first buffer amplifier has an input connected to the sense node and an output connected to a sample stage operable to sample a value of the sense node. A second buffer amplifier has an input connected to the sample stage. Control circuitry operates the reset switch and causes the sample stage to sample the sense node while the photo-sensitive element is exposed to radiation. An array of pixels is synchronously exposed to radiation. Sampled values for a first exposure period can be read while the photo-sensitive element is exposed for a second exposure period.07-12-2012
20120175498IMAGE SENSORS AND METHODS WITH SHARED CONTROL LINES - An image sensor includes a pixel array with a plurality of pixels. Two or more rows of pixels in the pixel array share a control line in the pixel array, and pixels of the two or more rows of pixels that are in a same column of the pixel array are connected to provide output to different column readout lines. A method includes providing a control signal over a control line within a pixel array to pixels in two or more rows of the pixel array, and reading out signals from the pixels in the two or more rows at a same time over different column readout lines. An image sensor includes a pixel array with a plurality of pixels, and two or more columns of pixels in the pixel array may share a control line in the pixel array for receiving a control signal.07-12-2012
20120175497IMAGE SENSOR PIXELS WITH BACK-GATE-MODULATED VERTICAL TRANSISTOR - Image sensor arrays may include image sensor pixels each having at least one back-gate-modulated vertical transistor. The back-gate-modulated vertical transistor may be used as a source follower amplifier. An image sensor pixel need not include an address transistor. The image sensor pixel with the back-gate-modulated vertical source follower transistor may exhibit high fill factor, large charge storage capacity, and has as few as two row control lines and two column control lines per pixel. This can be accomplished without pixel circuit sharing. The pixel may also provide direct photo-current sensing capabilities. The ability to directly sense photo-current may facilitate fast adjustment of sensor integration time. Fast adjustment of sensor integration time may be advantageous in automotive and endoscopic applications in which the time available for the correction of integration time is limited.07-12-2012
20110068252PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM USING THE SAME - A photoelectric conversion apparatus of the present invention includes a first semiconductor region functioning as a barrier against signal charges between a first and a second photoelectric conversion element, and a second semiconductor region that has a width narrower than that of the first semiconductor region and functions as a barrier against signal charges between a first and the third photoelectric conversion element. A region with a low barrier is provided at least a part between the first and the second photoelectric conversion element.03-24-2011
20110068251SOLID-STATE IMAGE SENSOR - A solid-state image sensor includes: four or more photoelectric conversion units having spectral sensitivity characteristics different from one another; an amplifier unit disposed in correspondence to each group of photoelectric conversion units among N groups (N represents an integer less than a quantity of the four or more photoelectric conversion units and equal to or greater than one), the four or more photoelectric conversion units being divided into the N groups; and transfer units, each disposed in correspondence to one of the four or more photoelectric conversion units, which transfer a signal generated at the photoelectric conversion unit to the amplifier unit disposed for the group to which the photoelectric conversion unit belongs.03-24-2011
20120119070IMAGE SENSING APPARATUS, IMAGE SENSING APPARATUS CONTROL METHOD, AND IMAGING SYSTEM - An image sensing apparatus comprises: an output unit which includes an output line group, a plurality of difference circuits, a first dummy line, and a second dummy line, and wherein the output line group is interposed between the first dummy line and the second dummy line, a readout unit includes a plurality of memory circuits, each of the plurality of memory circuits includes a first holding capacitance and a second holding capacitance, a gain determined by a ratio of a capacitance value of the first holding capacitance and a capacitance value of a first output line is applied to the first signal output to the first output line, and a gain determined by a ratio of a capacitance value of the second holding capacitance and a capacitance value of a second output line is applied to the second signal output to the second output line.05-17-2012
20120119069SOLID-STATE IMAGING DEVICE AND SIGNAL PROCESSING CIRCUIT - A solid-state imaging device includes a semiconductor substrate having a principal surface, and three or more pixel regions formed in at least one direction of two different directions along the principal surface of the semiconductor substrate. Each pixel region includes a plurality of photoelectric conversion regions having different sensitivities. The photoelectric conversion region having the highest sensitivity in peripheral pixel regions of the pixel regions has a higher sensitivity than the photoelectric conversion region having the highest sensitivity in a central pixel region of the pixel regions.05-17-2012
20120119067IMAGE SENSING DEVICE FOR FAST SIGNAL PROCESSING - An image sensing device includes a first circuit unit configured to convert an image signal provided from a first pixel into a digital value and generate first image data, a second circuit unit configured to convert an image signal provided from a second pixel into a digital value and generate second image data, and a processing unit configured to receive the first image data and the second image data at a substantially same time and sequentially output the first image data and the second image data according to a predetermined speed.05-17-2012
20120119066CCD - A back-illuminated CCD includes a two-dimensional array of charge collection sites arranged in rows and columns. Each row is associated with a plurality of electrodes at the front face extending in the direction of the row and corresponding to respective phase voltages. A plurality of conducting strips is provided with each strip having repeatedly reversing inclined portions. Each portion is in electrical contact with the electrodes of a corresponding phase voltage of two or more rows. Each portion is inclined relative to the rows in the opposite direction to that in which the preceding portion is inclined.05-17-2012
20120119063Solid-state imaging device and method of adjusting reference voltage - A solid-state imaging device includes: a pixel array unit that includes a plurality of pixels arranged two dimensionally and a plurality of read-out signal lines used for reading out pixel signals from the plurality of pixels; test voltage applying units that are disposed at the read-out signal lines and apply test voltages of various voltage levels to the read-out signal lines; a reference voltage generating circuit that includes a MOS transistor used for generating a reference voltage and can change an operating point of the MOS transistor; and an operating point control unit that controls a process of adjusting the operating point of the MOS transistor based on the test voltages and the reference voltage.05-17-2012
20110024606SOLID-STATE IMAGING DEVICE - A solid-state imaging device of an embodiment includes an imaging region, an output register, a corner register, a multiplication register, a first amplifier, a second amplifier, and a valve gate electrode. The output register is a transfer register that receives a charge transferred from the imaging region to transfer the charge. The output register is capable of selectively transferring a charge in one direction and in the other direction opposite to the one direction. The corner register transfers a charge transferred in one direction from the output register. The multiplication register receives a charge from the corner register and generates and transfers a multiplied charge. The first amplifier generates a signal based on a multiplied charge from the multiplication register. The second amplifier generates a signal based on a charge transferred in the other direction by the output register. The valve gate electrode is an electrode for preventing a transfer of a charge between the output register and the corner register.02-03-2011
20110024605IMAGING APPARATUS AND DEVICE - An imaging apparatus capable of suppressing deterioration of image qualities and output properties is provided having one or more output circuits in series and a buffer circuit 02-03-2011
20110024607SOLID-STATE IMAGING DEVICE - A solid-state imaging device 02-03-2011
20110248146SOLID-STATE IMAGE PICKUP DEVICE, METHOD FOR MANUFACTURING SOLID-STATE IMAGE PICKUP DEVICE, AND CAMERA - A solid-state image pickup device including a plurality of pixels on a light-receiving surface, photodiodes disposed on the light-receiving surface of a semiconductor substrate while being partitioned on the pixel basis, signal transferring portions which are disposed on the semiconductor substrate and which read signal charges generated and stored in the photodiodes or voltages corresponding to the signal charges, insulating films disposed on the semiconductor substrate while covering the photodiodes, concave portions disposed in the insulating films, pad electrodes disposed on the insulating films, a passivation film which covers inner walls of the concave portions, which is disposed on the pad electrodes, and which has a refractive index higher than that of silicon oxide, and a core layer which is disposed on the passivation film while being filled in the concave portions and which has a refractive index higher than that of silicon oxide.10-13-2011
20110253882SOLID STATE IMAGING DEVICE - A solid state imaging device in which γ characteristic is obtained and enlargement of dynamic range is provided. The solid state imaging device of the present invention includes a vertical overflow function and has a feature in which potential of a semiconductor substrate is changed from a high potential to a low potential in a stepwise manner during a period from an exposure start to an exposure end.10-20-2011
20100264298PHOTO-ELECTRIC CONVERSION DEVICE AND IMAGE CAPTURING SYSTEM - A photo-electric conversion device comprises a pixel array in which a plurality of pixels are arrayed, each pixel including a photo-electric converter, a floating diffusion portion, a transfer unit which transfers charges generated in the photo-electric converter to the floating diffusion portion, and an output unit which outputs a signal corresponding to a potential of the floating diffusion portion, a signal line which is connected to the plurality of pixels and transmits a signal output from each pixel, a load transistor including a drain connected to the signal line, and a source connected to a first reference potential, and a capacitance including a first electrode connected to a gate of the load transistor, and a second electrode connected to a second reference potential, wherein the signal line is arranged not to overlap the first electrode when viewed from a direction perpendicular to a light-receiving surface of the photo-electric converter.10-21-2010
20110248145SOLID-STATE IMAGING DEVICE, DIGITAL CAMERA, AND ANALOG-TO-DIGITAL CONVERSION METHOD - A solid-state imaging device according to the present invention includes: a pixel portion including a plurality of unit pixels arranged in a matrix; a column signal line provided per column in the pixel portion; an AD conversion unit which converts a voltage of a pixel signal into a digital value by performing counting until a reference signal reaches the voltage of the pixel signal from the column signal line; and a clock signal generating unit which generates, to the AD conversion unit, a counter clock for the counting, and the clock signal generating unit switches, during a period of the AD conversion, a frequency of the counter clock from a first frequency to a second frequency that is different from the first frequency.10-13-2011
20090242739SEMICONDUCTOR IMAGING DEVICE HAVING A PLURALITY OF PIXELS ARRANGED IN A MATRIX-LIKE PATTERN - In an arrangement with four PDs (PD10-01-2009
20080315072APPARATUS AND METHOD FOR PRODUCING A REPRESENTATION OF AN OBJECT SCENE - An apparatus (12-25-2008
20080315071IMAGE READING APPARATUS AND CONTROLLING METHOD THEREOF - An image reading apparatus includes light sources, an image sensor, a data generating unit, and a carrier unit. The light sources are sequentially turned on for an identical period once in a single line period. The image sensor reads information from a print medium irradiated by the light sources. The data generating unit generates pixel data corresponding to the information. The carrier unit carries the print medium such that the image print medium is scanned by the image sensor in a sub-scanning direction. The single line period is equal to or more than twice a period from when first one of the light sources is turned on until last one of the light sources is turned off.12-25-2008
20090127437METHOD AND APPARATUS FOR REDUCING DARK CURRENT AND HOT PIXELS IN CMOS IMAGE SENSORS - Methods and apparatuses for reducing dark current and hot pixels in CMOS image sensors. A pixel apparatus includes a photosensor capable of generating dark current, a floating diffusion region coupled to the photosensor by way of a charge transfer transistor, a rest transistor connected between the floating diffusion region and an array pixel supply voltage. The array supply voltage varies between first and second voltages when sampling pixel signals from the pixel.05-21-2009
20090127436METHOD AND APPARATUS FOR CONTROLLING ANTI-BLOOMING TIMING TO REDUCE EFFECTS OF DARK CURRENT - An electronic imager includes a plurality of pixels having photosensors for accumulating charge corresponding to individual pixel values of a sensed image. Each of the pixels includes an anti-blooming function which allows charge in excess of a predetermined amount to be drained from the photosensor thus reducing the charge from the pixel that migrates to adjacent pixels. The imager also includes circuitry which controls the anti-blooming function in response to image intensity to reduce dark current in the imager caused by the anti-blooming function.05-21-2009
20090127435CONVERSION APPARATUS, RADIATION DETECTING APPARATUS, AND RADIATION DETECTING SYSTEM - A conversion apparatus of the present invention includes a plurality of pixels including switching elements and conversion elements. The pixels are arranged in a pixel region including a switching element region in which switching elements are arranged in row and column directions and a conversion element region in which conversion elements are arranged in row and column directions. A plurality of wirings are including a second metal layer are connected to the plurality of switching elements of the column direction. Plural bias wirings of a fourth metal layer are connected to plural conversion elements. An external signal wiring of the fourth metal layer outside the pixel region is connected to the signal wirings. An external bias wiring of a first metal layer outside the pixel region is connected to the plurality of bias wirings. The external signal wiring and the external bias wiring intersect each other.05-21-2009
20090127434IMAGE SENSOR WITH EXPANDING DYNAMIC RANGE - A conventional image sensor has a narrow dynamic range, so that the conventional image sensor has the limitation of not representing very dark portions or very bright portions depending on the exposure time when representing an image having such dark and bright portions. The present invention provides an image sensor including at least two storage units for respectively storing at least two image signals; a first switch unit for performing switching applied image signals to be respectively stored in the at least two storage units; and a second switch unit respectively connected to the at least two storage units and for equalizing the image signals stored in the at least two storage units.05-21-2009
20110174957RADIATION DETECTION ELEMENT - The present invention provides a radiation detection element that may suppress variation in wiring load, and that may increase the arrangement pitch of connecting portions connected to external circuits. Namely, plural pixels are disposed in an inclined matrix within a detection region, and a signal line is disposed for every two pixel lines in a vertical direction.07-21-2011
20080265137Photonic crystal sensors with integrated fluid containment structure - Photonic crystal (PC) sensors, and sensor arrays and sensing systems incorporating PC sensors are described which have integrated fluid containment and/or fluid handling structures. Sensors and sensing systems of the present disclosure are capable of high throughput sensing of analytes in fluid samples, bulk refractive index detection, and label-free detection of a range of molecules, including biomolecules and therapeutic candidates. The present disclosure also provides a commercially attractive fabrication platform for making photonic crystal sensors and systems wherein an integrated fluid containment structure and a photonic crystal structure are fabricated in a single molding or imprinting processing step amendable to high throughput processing.10-30-2008
20090212197Large -area pixel for use in an image sensor - A pixel for detecting incident radiation (In) over a large area with high sensitivity and low power consumption. The pixel comprises a semiconductor substrate (08-27-2009
20120199726IMAGING APPARATUS AND PROCESSING METHOD THEREOF - A solid-state imaging apparatus of a dynamic range enlarged by reading out a carrier accumulated in a carrier accumulation unit at a plurality of times during a single carrier accumulation time period.08-09-2012
20120199725PHOTOELECTRIC CONVERSION ELEMENT, AND PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM USING THE SAME - A light condensing member focuses light, which is incident upon a first area of the light condensing member corresponding to an opening portion of an insulation film, in an upper portion region of a light path member arranged within the opening portion, the insulation film having an upper face extending from the opening portion, and the light path member having a lower face in a region corresponding to a light receiving face of an photoelectric conversion portion.08-09-2012
20080203277Light Sensitive System and Method for Attenuating the Effect of Ambient Light - There is provided a light-sensitive system responsive to light supplied by the system and less responsive to other light. The system includes a light source operable to supply time-modulated illumination, and a light sensor having greater response to the time-modulated illumination than to light from sources not so modulated. The invention may be embodied as a camera sensitive to supplied light and relatively insensitive to ambient light, and is useful in providing images for automated image interpretation. A method for photographing an object is also provided.08-28-2008
20080203276Low Height Imaging System And Associated Methods - In an embodiment, a low height imaging system has: one or more optical channels and a detector array, each of the optical channels (a) associated with at least one detector of the array, (b) having one or more optical components and a restrictive ray corrector, and (c) configured to direct steeper incident angle field rays onto the at least one detector.08-28-2008
20110163224ADJUSTABLE CMOS SENSOR ARRAY - A column buffer for use with a pixel cell array includes an amplifier coupled to three read-out circuits in parallel providing a signal corresponding to accumulated photon-generated charge in a pixel cell plus noise, a reset level plus noise, and a pedestal level, respectively. These three signals are used to generate an ultra-low noise signal D07-07-2011
20110260039Imaging Array with Modulated Pixels - An imaging array and a method for operating the same are disclosed. The imaging array includes a plurality of light pixels and a sense amplifier. Each light pixel includes a photodetector that generates and couples a signal indicative of a light exposure to a light pixel node, a readout circuit, and a mixer that mixes a signal on the light pixel node with a pixel oscillator signal. The sense amplifier includes an input node that receives a signal from each light pixel, one light pixel at a time. The sense amplifier also includes a high pass filter that attenuates signals with frequencies less than a cutoff frequency and a mixer that demodulates the signal from the filter to provide a signal that is related to the potential on the light pixel node of the light pixel connected to the first input node.10-27-2011
20110068253PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM USING THE PHOTOELECTRIC CONVERSION APPARATUS - A photoelectric conversion apparatus of the present invention includes: a plurality of photoelectric conversion elements arranged on a substrate; a transistor for transferring a signal charge; and a plurality of transistors for reading out the signal charge transferred. The plurality of photoelectric conversion elements include a first photoelectric conversion element and a second photoelectric conversion element adjacent to each other. The photoelectric conversion apparatus of the present invention includes: a first semiconductor region having a first conductivity type arranged between the first photoelectric conversion element and the second photoelectric conversion element; and a second semiconductor region having the first conductivity type that is arranged on a region where the plurality of transistors are arranged and that has a width larger than that of the first semiconductor region of the first conductivity type.03-24-2011
20110068254PHOTOELECTRIC CONVERSION ELEMENT, METHOD FOR PRODUCING PHOTOELECTRIC CONVERSION ELEMENT, AND SOLID-STATE IMAGING DEVICE - A photoelectric conversion element is provided and includes a photoelectric conversion portion. The photoelectric conversion portion includes: a pair of electrodes; and a photoelectric conversion layer between the pair of electrodes, and at least part of the photoelectric conversion layer includes a mixed layer of a p-type organic semiconductor and a fullerene, and a mixing ratio of the fullerene to the p-type organic semiconductor in terms of thickness ratio is less than 1:1.03-24-2011
20100282944SOLID STATE IMAGING DEVICE AND IMAGING APPARATUS - A solid state imaging device includes: a light receiving section performing photoelectric conversion; a transfer register formed in a semiconductor base; a transfer electrode formed of a semiconductor layer on the transfer register; a charge transfer section which formed of the transfer register and the transfer electrode and transferring a signal charge accumulated in the light receiving section; a bus line electrically connected to a portion of the transfer electrode to supply a driving pulse to the transfer electrode and formed of a metal layer; and a barrier metal layer formed near an interface between the transfer electrode and the bus line in a contact section that connects the transfer electrode and the bus line with each other and having a work function of the size between a work function of the semiconductor layer of the transfer electrode and a work function of the metal layer of the bus line.11-11-2010
20110084197Solid-State Image Sensor - A pixel output line is provided for each of the pixels two-dimensionally arrayed in a pixel area. The pixel output lines are extended to a memory area, and a memory unit is connected to each of those lines. The memory unit includes a writing-side transistor, a reading-side transistor and a plurality of memory sections for holding signals for 104 image frames. A photocharge storage operation is simultaneously performed at all the pixels, and the thereby produced signals are outputted to the pixel output lines. In the memory unit, with the writing-side transistor in the ON state, the sampling transistor of a different memory section is sequentially turned on for each exposure cycle so as to sequentially hold a signal in the capacitor of each memory section. After a burst imaging operation is completed, all the pixel signals are sequentially read. Unlike CCDs, the present device does not simultaneously drive all gate loads, so that it can be driven at high speeds with low power consumption. Thus, the burst imaging can be performed at higher speeds than ever before.04-14-2011
20120126095DETECTION APPARATUS AND RADIATION DETECTION SYSTEM - A detection apparatus includes conversion elements and switch elements disposed below the conversion elements; insulating layers are disposed between the conversion elements and switch elements. Each conversion element includes a first electrode corresponding to a switch element. A second electrode extends over the plurality of conversion elements; and a semiconductor layer formed between the first electrodes and the second electrode extends over the plurality of conversion elements. Insulating layers include first regions located immediately below the first electrodes and a second region located between the first regions. A third electrode is disposed in the second region and between the insulating layers. The third electrode is supplied with a potential that sets a potential of a part where the second region is in contact with the semiconductor layer to a value between a potential of the second electrode and a potential of the first electrode.05-24-2012
20110133057ANTI-ECLIPSE CIRCUITRY WITH TRACKING OF FLOATING DIFFUSION RESET LEVEL - An anti-eclipse circuit for an imager is formed from pixel circuitry over the same semiconductor substrate as the imaging pixels. More specifically, two adjacent pixel circuits are modified to form an amplifier. One input of the amplifier is adapted to receive a reset signal from one of the pixel circuits while another input is adapted to be set at a predetermined offset voltage from the output of the amplifier. The amplifier is preferably a unity gain amplifier, so that the output of the amplifier set to a voltage level equal to the predetermined offset from the voltage level of the reset signal. Accordingly, the anti-eclipse circuit outputs a reference voltage at predetermined level from the reset voltage of a pixel and does not need to be calibrated for fabrication related variances in reset voltages.06-09-2011
20110133056APPARATUS, SYSTEM, AND METHOD FOR EMISSION FILTER - An apparatus, system, and method for emission filter. A filter apparatus is presented. In one embodiment, the filter apparatus may be adapted for fluorescence spectroscopy. In a particular embodiment, the filter apparatus comprises a solution. The solution may include a polar protic solvent and an absorbing specimen. Additionally, the filter apparatus may include an adhesive to conform the solution into a solid filter.06-09-2011
20120199723SOLID-STATE IMAGING DEVICE - According to one embodiment, a solid-state imaging device includes: a vertical signal line through which a pixel signal read from the pixel is vertically transmitted; a level-shift circuit that shifts a potential at the vertical signal line; a level-shift control circuit that controls an amount of shifted potential at the vertical signal line; a timing control circuit that generates a control signal controlling the level-shift control circuit; and a pixel signal output control unit that controls an output of the pixel signal based on a change in potential at the vertical signal line when the potential at the vertical signal line shifted by the level-shift circuit is used as a reference.08-09-2012
20110163223ACTIVE PIXEL SENSOR HAVING TWO WAFERS - A vertically-integrated active pixel sensor includes a sensor wafer connected to a support circuit wafer. Inter-wafer connectors or connector wires transfer signals between the sensor wafer and the support circuit wafer. The active pixel sensor can be fabricated by attaching the sensor wafer to a handle wafer using a removable interface layer. Once the sensor wafer is attached to the handle wafer, the sensor wafer is backside thinned to a given thickness. The support circuit wafer is then attached to the sensor wafer and the handle wafer separated from the sensor wafer.07-07-2011
20110168872SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus, controlling a potential on a semiconductor substrate for an electronic shutter operation, includes: a first semiconductor region of the first conductivity type for forming a photoelectric conversion region; a second semiconductor region of the first conductivity type, formed separately from the photoelectric conversion region, for accumulating carriers; a third semiconductor region of a second conductivity type arranged under the second semiconductor region, for operating as a potential barrier; a fourth semiconductor region of the second conductivity type extending between the first semiconductor region and the semiconductor substrate, and between the third semiconductor region and the semiconductor substrate; and a first voltage supply portion for supplying a voltage to the third semiconductor region; wherein the first voltage supply portion includes a fifth semiconductor region of the second conductivity type arranged in the pixel region, and a first electrode connected to the fifth semiconductor region.07-14-2011
20120145886CMOS IMAGE SENSORS AND METHODS FOR OUTPUTTING PIXEL DATA AT HIGH SPEEDS - A The CMOS image sensor includes a pixel array including pixels arranged in a matrix of rows and columns and a row selection unit configured to generate selection signals for simultaneously or concurrently selecting at least two rows from the rows of the pixel array in response to a received row address. An analog-to-digital conversion unit is configured to convert pixel data output from the at least two rows selected from the pixel array into a digital video signal and output the digital video signal. The pixel array outputs the pixel data in response to the selection signals.06-14-2012
20120145884QUANTUM DOT OPTICAL DEVICES WITH ENHANCED GAIN AND SENSITIVITY AND METHODS OF MAKING SAME - Various embodiments include apparatuses including optical and optoelectronic devices and methods of making same. One such device includes an image sensor having an integrated circuit with a number of pixel electrodes, a substantially-continuous optically-sensitive layer, and at least one counter-electrode. The substantially continuous optically sensitive layer is in electrical communication with both the number of pixel electrodes and also the counter-electrode. Additional apparatuses and methods are disclosed.06-14-2012
20120145883READOUT CIRCUIT HAVING ENHANCED DYNAMIC RANGE - A method of reading out photocurrent. A readout integrate circuit (ROIC) is provided including an integration capacitor (Cint) having a charging electrode. The ROIC provides linear operation over a linear pixel output signal range when a voltage across Cint (V06-14-2012
20110062310SOLID-STATE IMAGING DEVICE, IMAGING DEVICE AND DRIVING METHOD OF SOLID-STATE IMAGING DEVICE - It is possible to achieve compatibility between suppressing dark current caused by a leak phenomenon and ensuring element reliability in a CMOS solid-state imaging device. When a pixel using electrons as signal charge is driven, the negative voltage level of each of control signals adapted to pulse-drive transistors in the pixel is adjusted so that the longer the charge accumulation time, the higher the voltage level. Preferably, the negative voltage level is grounded (GND) when no signal charge is accumulated. The negative voltage level is increased only when the charge accumulation time is long, which is the case where dark current caused by a leak phenomenon becomes a problem. Therefore, it is possible to suppress stress on the pixels and the gate oxide film of their drive circuits and degradation of the transistor characteristics even if dark current is suppressed.03-17-2011
20120145881SOLID-STATE IMAGE PICKUP APPARATUS AND IMAGE PICKUP SYSTEM - In a solid-state image pickup apparatus including a pixel array having pixels each including photoelectric conversion element arranged in a matrix, a synchronization signal generation unit generates a horizontal synchronization signal to define a first horizontal period and a second horizontal period different in length from the first horizontal period. Based on the horizontal synchronization signal, a reset scanning circuit sequentially selects and resets pixels in rows of the pixel array, and a readout scanning circuit sequentially selects pixels and reads a pixel signal therefrom. In each pixel, the charge is accumulated in a charge accumulation period starting when the resetting is performed and ending when the pixel signal is read. In one vertical period, the first horizontal period and the plurality of second horizontal period both appear a plurality of times, wherein the second horizontal period appears periodically.06-14-2012
20110073750IMAGE PICKUP APPARATUS AND RADIATION IMAGE PICKUP SYSTEM - An image pickup apparatus includes an insulating substrate, and a plurality of pixels each including a conversion element configured to convert incident light or radiation into a charge and also including a switch element configured to transfer an electric signal corresponding to the charge generated by the conversion element. Gate wiring is configured to drive the switch element to transfer the electric signal through signal wiring. The plurality of pixels, the signal wiring, and the gate wiring are disposed on one surface of the insulating substrate. The insulating substrate has vias that provide electrical connections between the one surface and an opposite surface of the insulating substrate.03-31-2011
20110095169IMAGING APPARATUS, IMAGING SYSTEM, METHOD OF CONTROLLING THE APPARATUS AND THE SYSTEM, AND PROGRAM - An imaging apparatus includes a conversion unit including a plurality of pixels arranged in a matrix, each pixel including a conversion element, an output switch element, and an initialization switch element; an output drive circuit controls an output operation; an initialization drive circuit controls an initialization operation; and a readout circuit performs a signal sample-and-hold operation and a reset operation. A control unit performs termination of the output operation of a certain row and start of the output operation of another row after the termination of the reset operation, the start of the signal sample-and-hold operation after the termination of the output operation of the certain row and the start of the output operation of the other row, the start of the reset operation and the initialization operation after the termination of the signal sample-and-hold operation, and the termination of the reset operation after the termination of the initialization operation.04-28-2011
20110095168IMAGE READER AND IMAGE FORMING APPARATUS - An image reader includes: a rectangular substrate; a photoelectric conversion element that is mounted on one surface of the substrate; a connector that is mounted on the other surface of the substrate so as to be closer to one end face of the substrate than a position on the substrate where the photoelectric conversion element is mounted, and is connected to a signal line; a support member; and a restricting member that is provided on the substrate so as to be closer to the one end face of the substrate in the longitudinal direction than the position where the substrate is supported by the support member, when another connector is fitted to at least the connector, the restricting member coming into contact with the one surface of the substrate and restricting the deformation of the substrate in a direction in which the another connector is fitted.04-28-2011
20100059662CMOS IMAGER AND APPARATUS WITH SELECTIVELY SILICIDED GATES - The invention also relates to an apparatus and method for selectively providing a silicide coating over the transistor gates of a CMOS imager to improve the speed of the transistor gates. The method further includes an apparatus and method for forming a self aligned photo shield over the CMOS imager.03-11-2010
20110260038SOLID-STATE IMAGE PICKUP ELEMENT AND METHOD FOR CONTROLLING THE SAME - A transfer circuit is configured to transfer signal charges of an accumulating region to a floating diffusion region when being operated, while being configured to stop the transfer of the signal charges when not being operated, by use of a transfer gate which is turned on and off in response to a transfer control signal. The pixel control circuit controls the transfer circuit according to a light receiving level of a pixel circuit so as to extend an operation period of the pixel circuit in a case where a light receiving quantity is not lower than a predetermined quantity, contrary to a case where the light receiving quantity is lower than the predetermined quantity.10-27-2011
20110260037LIGHT CONCENTRATION APPARATUS, SYSTEMS AND METHODS - An optical concentrator is disclosed which includes an imaging, aplanatic optical element having a front surface with a one-way light admitting portion, a back surface with a reflective portion, and an interior region of refractive material disposed between the front and backs surfaces.10-27-2011
20110260036Temporally- And Spatially-Resolved Single Photon Counting Using Compressive Sensing For Debug Of Integrated Circuits, Lidar And Other Applications - A method for photon counting including the steps of collecting light emitted or reflected/scattered from an object; imaging the object onto a spatial light modulator, applying a series of pseudo-random modulation patterns to the SLM according to standard compressive-sensing theory, collecting the modulated light onto a photon-counting detector, recording the number of photons received for each pattern (by photon counting) and optionally the time of arrival of the received photons, and recovering the spatial distribution of the received photons by the algorithms of compressive sensing (CS).10-27-2011
20110260035IMAGE ACQUISITION SYSTEM AND METHOD FOR THE MANUFACTURE THEREOF - An image acquisition system, in particular for automotive applications, includes: a substrate; an image sensor mounted on the substrate and contacted via contact points; an optically transparent sealing compound that covers the image sensor, the contact points, and a portion of the upper substrate side; an optical device being arranged or secured in or on the sealing compound. The optical device can be placed into the sealing compound after shaping of the sealing compound or directly. Furthermore, the optical device can also be arranged directly by shaping the sealing compound. Manufacture of the image acquisition system can be incorporated into a board populating process.10-27-2011
20080217513Imaging apparatus - An imaging apparatus includes a solid state imaging device having a light receiving characteristic in which an amount of light received reaches a maximum when an angle of incidence of parallel light, radiated at continuously changing angle, is not vertical (angle θ of incident light in the range of 3° to 15°) to a light receiving surface. This characteristic changes the amount of light received greatly when an aperture stop is opened, and enhances an opening/closing effect of the aperture stop. The solid state imaging device includes a core/clad light guide path structure, whose core serves as a light guide path. This light guide path includes a columnar portion located above a photodiode, and a lens portion on the columnar portion.09-11-2008
20100025571SOLID-STATE IMAGE PICKUP DEVICE, METHOD FOR MANUFACTURING SOLID-STATE IMAGE PICKUP DEVICE, AND CAMERA - A solid-state image pickup device includes a plurality of pixels on a light-receiving surface, photodiodes disposed on the light-receiving surface of a semiconductor substrate while being partitioned on the pixel basis, signal transferring portions which are disposed on the semiconductor substrate and which read signal charges generated and stored in the photodiodes or voltages corresponding to the signal charges, insulating films disposed on the semiconductor substrate while covering the photodiodes, concave portions disposed in the insulating films, pad electrodes disposed on the insulating films, a passivation film which covers inner walls of the concave portions, which is disposed on the pad electrodes, and which has a refractive index higher than that of silicon oxide, and a core layer which is disposed on the passivation film while being filled in the concave portions and which has a refractive index higher than that of silicon oxide.02-04-2010
20100025570PHOTOELECTRIC CONVERSION APPARATUS AND IMAGE PICKUP SYSTEM USING THE APPARATUS - A photoelectric conversion apparatus includes a first block line through which an optical signal is output and a second block line through which a noise signal superimposed on the optical signal is output. The photoelectric conversion apparatus also includes a switch used to control a connection between the first block line and the second block line.02-04-2010
20100025569SOLID-STATE IMAGING DEVICE, METHOD OF PRODUCING THE SAME, AND IMAGING DEVICE - A solid-state imaging device includes a semiconductor substrate including a pixel portion having a photoelectric conversion portion and a peripheral circuit portion; a first sidewall composed of a sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the pixel portion; a second sidewall composed of the sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the peripheral circuit portion; a first silicide blocking film composed of the sidewall film and disposed on the photoelectric conversion portion and a part of the MOS transistors in the pixel portion; and a second silicide blocking film disposed on the MOS transistors in the pixel portion so as to overlap with a part of the first silicide blocking film, wherein the MOS transistors in the pixel portion are covered with the first and second silicide blocking films.02-04-2010
20100025568IMAGE SENSING DEVICE - A device includes an electron emission source array including a plurality of electron emission sources, a photoelectric conversion film disposed to face the electron emission source array, and an intermediate electrode provided between the electron emission source array and the photoelectric conversion film, and an intermediate electrode current detector that applies a positive potential, relative to a potential of the electron emission source array, to the intermediate electrode and detects a current flowing in the intermediate electrode.02-04-2010
20110215223SOLID-STATE IMAGING DEVICE - According to one embodiment, a solid-state imaging device including a plurality of pixels two-dimensionally arranged at a preset pitch in a semiconductor substrate is provided. Each of the pixels is configured to include first and second photodiodes that photoelectrically convert incident light and store signal charges obtained by conversion, a first micro-lens that focuses light on the first photodiode, and a second micro-lens that focuses light on the second photodiode. The saturation charge amount of the second photodiode is larger than that of the first photodiode. Further, the aperture of the second micro-lens is smaller than that of the first micro-lens.09-08-2011
20110215222METHOD AND APPARATUS FOR BACKSIDE ILLUMINATED IMAGE SENSORS USING CAPACITIVELY COUPLED READOUT INTEGRATED CIRCUITS - The images sensor includes a readout circuit capacitatively coupled to a memory circuit. The readout circuit includes: (i) a photon detector to receive a plurality of photons and to provide a charge signal corresponding to the received photons, (ii) a resettable integrator that is reset multiple times over a single exposure time and provides an analog representation of the incident photons during the last integration cycle, and (iii) a comparator that monitors the integrator output and generates a reset pulse when the integrator reaches a built-in threshold value. The memory circuit includes: (i) a receiver circuit that detects the output of the digital driver in the front-end readout circuit via capacitive coupling and generates a digital voltage pulse for each received signal, and (ii) a digital counting memory to count the received pulses to provide a coarse digital representation of how many times the integrator is reset.09-08-2011
20100019130CHIP-STACKED IMAGE SENSOR - A chip-stacked image sensor obtained by embodying an image sensor cell in two chips and combining the chips with each other is provided. The chip-stacked image sensor includes first and second semiconductor chips. The first semiconductor chip includes a plurality of image signal sensing cells for generating image charges corresponding to image signals sensed by at least four photodiodes and outputting the generated image charges through at least two common terminals and a plurality of image charge transmission pads. The second semiconductor chip includes a plurality of image signal conversion cells for converting the image signals into electrical signals and a plurality of image charge receiving pads. Here, the image charges generated by the image signal sensing cells are transmitted to corresponding image signal conversion cells via the plurality of image charge transmission pads and the plurality of image charge receiving pads.01-28-2010
20100019129IMAGING DEVICE AND IMAGING APPARATUS - A photoelectric conversion element includes a plurality of light receiving portions. A color filter is provided on a light receiving surface of the photoelectric conversion element with filters for red, green, and blue arranged corresponding to the light receiving portions, such that R, G, and B pixels including the light receiving portions and the filters are arranged in a two-dimensional array. A transfer unit transfers a light in a wavelength range other than lights of green and blue incident on the G pixel and a light in a wavelength range other than lights of blue and green incident on the B pixel to a neighboring R pixel.01-28-2010
20100019128Focal Plane Array Imager - An imaging sensor having sensitivity at the single-photon level is disclosed. The sensor comprises an array of pixels, each of which comprises a negative-feedback avalanche diode and a read-out circuit that includes a counter. The counter keeps track of the number of photons detected by the diode during a given time period.01-28-2010
20100019127Solid-State Image Sensor and Signal Readout Method Thereof - After resetting the potential VPD of the photodiode (01-28-2010
20120145885IMAGING APPARATUS - An imaging apparatus which can provide a uniform magnetic field distribution in an image pickup device and can reduce the size of the device includes an electron emission source array with a plurality of electron emission sources arranged on a plane, and a translucent substrate having an optoelectronic film opposed to the electron emission source array with a space therebetween. The imaging apparatus includes a magnet portion for forming in the space a magnetic field in a direction orthogonal to each principal plane of the translucent substrate and the electron emission source array, and a magnetic force supply portion. The magnetic force supply portion has a magnetic body which is disposed on the light incident side to be opposed to the translucent substrate with a space therebetween and connected to the magnet portion, and an opening which defines an optical path that will not hinder formation of the optical image.06-14-2012
20090294632GLOBALLY RESET IMAGE SENSOR PIXELS - An imaging circuit includes a pixel array that is arranged to concurrently reset pixels in a pixel array in response to a global reset signal. The pixels are arranged in rows, such that the rows can be individually selected by a row select line. A reset transistor concurrently resets the pixels by coupling a reset voltage to a floating diffusion of the pixel. A transfer gate transistor selectively couples the floating diffusion to a storage region. A storage gate transistor selectively couples the storage region to a photosensitive region so that the reset transistor, the transfer gate transistor, and the storage gate transistor for each of the pixels can be activated in response to the global reset signal. A double correlated sampler may be used to provide a correlated double sample using a first sampled voltage of a reset voltage and a second sampled voltage of a pixel voltage that is produced when a photodiode region is exposed to incident light.12-03-2009
20090039236ACTIVE PIXEL SENSOR - Disclosed herein is an active pixel sensor. A first transistor amplifies voltage generated in response to light at an integration node N. A second transistor is a selecting transistor, and performs a function of selecting a specific pixel from a pixel array. A third transistor resets voltage of the integration node N to voltage supplied from VDD during a reset period. A fourth transistor is a photogate, and performs a function of connecting a photogate capacitance to the integration node N, and thus increasing a dynamic range when the voltage of the integration node N is VDD−Vth (photogate: fourth transistor). A fifth transistor is a logarithmic transistor, and performs a function of generating a signal voltage in a logarithmic response to light when the voltage of the integration node N is logarithmic bias voltage−Vth (logarithmic transistor: fifth transistor); and a photodiode performs a function of converting photons into electron pairs in a depletion layer, and then causing signal charges to be accumulated when light is incident from outside.02-12-2009
20120145882SENSOR ASSEMBLY, METHOD, AND MEASURING SYSTEM FOR CAPTURING THE DISTRIBUTION OF AT LEAST ONE VARIABLE OF AN OBJECT - A sensor assembly, a method, and a measuring system for capturing the distribution of at least one variable of an object are disclosed. The sensor assembly has at least one sensor element comprising at least one first sensor sub-element and at least one second sensor sub-element. The at least one first sensor sub-element is transparent for at least one wavelength region of light, the at least one second sensor sub-element is sensitive to at least one variable. Furthermore a method and measuring system and an illumination system for illuminating the sensor assembly and the object is provided.06-14-2012
20120145880FULL COLOR SINGLE PIXEL INCLUDING DOUBLET OR QUADRUPLET SI NANOWIRES FOR IMAGE SENSORS - An image sensor comprising a substrate and one or more of pixels thereon. The pixels have subpixels therein comprising nanowires sensitive to light of different color. The nanowires are functional to covert light of the colors they are sensitive to into electrical signals.06-14-2012
20120305751Solid-State Image Capture Device - A control part 12-06-2012
20120305749SOLID-STATE IMAGING DEVICE - According to one embodiment, a vertical selection circuit that sets an electronic shutter state and a read-out state in time division multiplexing for each selected row of a pixel array unit in which the pixels are arranged in a matrix pattern, a pulse selector circuit that drives the pixels belonging to the selected row in accordance with the electronic shutter state and the read-out state, and a timing generator circuit that controls operational timing of the vertical selection circuit and the pulse selector circuit are included.12-06-2012
20120305750MATRIX IMAGING DEVICE COMPRISING AT LEAST ONE SET OF PHOTOSITES WITH MULTIPLE INTEGRATION TIMES - A method for controlling a pixel may include first and second photosites, each having a photodiode and a charge-transfer transistor, a read node, and an electronic read element, all of which are common to all the photosites. The method may include an accumulation of photogenerated charges in the photodiode of the first photosite during a first period, an accumulation of photogenerated charges in the photodiode of the second photosite during a second period shorter than the first period, a selection of the signal corresponding to the quantity of charges accumulated in the photodiode of a photosite having the highest unsaturated intensity or else a saturation signal, and a digitization of the selected signal.12-06-2012
20120305748IMAGING DEVICE WITH VARYING EXPOSURE TIME - Example embodiments disclosed herein relate to an imaging device. The imaging device includes a photosensor and an exposure system or developer. The exposure system or developer controls illumination or exposure of light sensitive elements of the photosensor based on their location within the photosensor.12-06-2012
20120037789MATERIALS, SYSTEMS AND METHODS FOR OPTOELECTRONIC DEVICES - A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.02-16-2012
20120037787IMAGE SENSOR - An image sensor comprises, a substrate, a plurality of photoelectric converters mounted on the substrate, for each of which a photoelectric conversion layer is formed of an organic compound layer and is sandwiched between an anode and a cathode so as to perform photoelectric conversion based on incident light, drive circuits for detecting output provided by a signal current generated by the photoelectric converters and for reading signal charges, and a wiring for electrically connecting the photoelectric converters and the drive circuits, wherein, for the plurality of the photoelectric converters that form one read pixels, the size of a photoelectric conversion area differs in accordance with a sensitivity of each of the plurality of photoelectric converters.02-16-2012
20110108705SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD AND DESIGNING METHOD THEREOF, AND ELECTRONIC DEVICE - A solid-state imaging device includes: a semiconductor substrate that includes a photodiode separately provided for each of pixels disposed in a matrix on a light-receiving surface; a first insulating film formed on the semiconductor substrate so as to cover multilayer wiring formed on and in contact with the semiconductor substrate, wherein the first insulating film is formed using material of a first refractive index lower than a refractive index of the semiconductor substrate for at least bottom surface and top surface portions of the first insulating film; a second insulating film of a second refractive index higher than the first refractive index formed on the first insulating film; a third insulating film of a third refractive index higher than the second refractive index formed on the second insulating film; and a color filter formed on the third insulating film in a corresponding manner with each pixel so as to transmit light in a wavelength region of red, green, or blue.05-12-2011
20120119064IMAGE SENSOR - An image sensor for electronic cameras includes a plurality of light sensitive pixels arranged in rows and columns, wherein the pixels of a respective column can be read out via a respective column line and includes a plurality of data outputs, wherein a plurality of column lines are associated with the respective data output via at least one multiplexer device. The column lines are divided into a plurality of column line groups, wherein the respective column line group includes a plurality of column lines arranged next to one another; and wherein the number of column lines of the respective column line group corresponds to the number of the column lines associated with the respective data output.05-17-2012
20110315855APPARATUS AND METHOD FOR CAPTURING STILL IMAGES AND VIDEO USING CODED LENS IMAGING TECHNIQUES - An apparatus for capturing images. In one embodiment, the apparatus comprises: a coded lens array including a plurality of lenses arranged in a coded pattern and with opaque material blocking array elements that do not contain lenses; and a light-sensitive semiconductor sensor coupled to the coded lens array and positioned at a specified distance behind the coded lens array, the light-sensitive sensor configured to sense light transmitted through the lenses in the coded lens array.12-29-2011
20110315854READOUT TRANSISTOR CIRCUITS FOR CMOS IMAGERS - A readout transistor circuit for a pixel is disclosed. The readout transistor circuit includes a sense node. A reset transistor is in signal communication with the sense node. A source follower transistor is in signal communication with the sense node. A row select transistor is in signal communication with the source follower transistor. A switching transistor is in signal communication with the sense node. A capacitor is in signal communication with the switching transistor. The switching transistor is configured to place the capacitor in signal communication with the sense node to switch between a low voltage-per-charge (V/e−) ratio and a high voltage-per-charge (V/e−) to enable low noise performance of the sense node. The capacitor may be a metal-insulator-metal (MIM) capacitor. At least one of the reset transistor, the source follower transistor, the row select transistor, and the switching transistor may be a MOSFET. One or more of the MOSFETs may be a buried channel MOSFET.12-29-2011
20110315853STORING DATA IN DUMMY PIXELS IN AN IMAGE SENSOR - An image sensor includes a dummy pixel array with at least one dummy pixel, a pixel array with a plurality of main pixels, and a data processing unit configured to process a signal provided from the main pixels. The dummy pixel includes: a first switch having a first terminal receiving a first voltage and a second terminal coupled to a floating node; a second switch having a first terminal receiving a second voltage; a third switch coupled between a second terminal of the second switch and the floating node; and a driving element configured to drive a first terminal thereof according to a voltage level applied to the floating node.12-29-2011
20120043456SOLID-STATE IMAGE PICKUP DEVICE - A solid-state image pickup device may include: an image pickup unit in which a plurality of pixels are arranged in a matrix; a sample-and-hold unit having a switch element and a capacitance element; a frequency conversion unit in which a plurality of stages of inverting circuits are connected, the pixel signal is supplied to the first power supply terminal, and a start signal for starting clock generation and an output signal from the inverting circuit of a predetermined stage are input to one of the inverting circuits; a counting unit that counts the clock output from the frequency conversion unit; and a buffer circuit provided between a first terminal of the capacitance element connected to the switch element and the first power supply terminal, wherein a second terminal of the capacitance element is connected to the second power supply terminal.02-23-2012
20120043455MATERIALS, SYSTEMS AND METHODS FOR OPTOELECTRONIC DEVICES - A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.02-23-2012
20120001057SOLID-STATE IMAGING APPARATUS AND IMAGING APPARATUS - A solid-state imaging apparatus includes a comparator for comparing a pixel signal obtained by a pixel section and a reference signal the value of which varies in a stepwise manner, an analog-digital converter for outputting, as a digital value, the amount of time when the pixel signal and the reference signal change levels by the comparator; a reset signal generator for generating a reset signal that triggers a reset operation to be input to the comparator in order to adjust the reference in the analog-digital converter, and a waveform processor provided between the reset signal generator and the comparator for increasing the degree of dullness of a waveform of the reset signal.01-05-2012
20120001055RAMP SIGNAL GENERATOR AND IMAGE SENSOR - Disclosed are a ramp signal generator and an image sensor. The ramp signal generator includes: a comparator comparing a first bias voltage input to a first input terminal and a second bias voltage input to a second input terminal and outputting a ramp signal from an output terminal; a ramp signal adjustment unit including a plurality of switched capacitors made up of switches and capacitors connected in series, and connected in parallel between a first input terminal of the comparator and an output terminal of the comparator; and a controller switching the switches of the plurality of switched capacitors to adjust the ramp signal output from the comparator such that the ramp signal becomes nonlinear over time.01-05-2012
20090020686READING CIRCUIT, DISPLAY PANEL AND ELECTRONIC SYSTEM UTILIZING THE SAME - A reading circuit including a detection module, a first transistor, and a compensation module is disclosed. The detection module detects a light. The first transistor transforms the detection result for generating a current signal. The compensation module compensates a threshold voltage of the first transistor.01-22-2009
20110101205SYSTEMS AND METHODS FOR COLOR BINNING - In various exemplary embodiments, optically sensitive devices comprise a plurality of pixel regions. Each pixel region includes an optically sensitive layer over a substrate and has subpixel regions for separate wavebands. A pixel circuit comprises a charge store and a read out circuit for each subpixel region. Circuitry is configured to select a plurality of subpixel elements from different pixels that correspond to the same waveband for simultaneous reading to a shared read out circuit.05-05-2011
20110101204IMAGE SENSOR - The invention relates to an image sensor, in particular to a CMOS sensor, having a plurality of light sensitive pixels arranged in rows and columns for the generation of output signals proportional to the exposure, wherein column lines are associated with the columns to supply the output signals to at least one column amplifier for amplification, wherein the at least one column amplifier cooperates with the column lines such that the amplification of the respective output signal depends on the capacitance of the respective column line.05-05-2011
20110155891SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS - A semiconductor device includes: a photoelectric conversion layer; a continuous or discontinuous cylindrical metal microstructure embedded in the photoelectric conversion layer; and a dielectric film with which an inner side surface and an outer side surface of the metal microstructure are coated.06-30-2011
20110155890SOLID-STATE IMAGING DEVICE - According to one embodiments, a pixel array unit in which pixels PC are arranged in a matrix manner, a sample-and-hold signal conversion circuit that detects a signal component of each of the pixels PC in a CDS, and a timing control circuit that controls to sample a reference level of an analog CDS after a reference level of a digital CDS is converted into a digital value are included.06-30-2011
20110155892ADJUSTABLE CMOS SENSOR ARRAY - In one aspect, the present invention provides an active pixel sensor array with optimized matching between pixels and strength and frequency of incoming signals such as photons absorbed. The array comprises multiple pixels of individual geometry corresponds to spatial location. Each pixel full-well is adjustable via modifiable pixel conversion gain while maintaining pixel linearity. Furthermore each pixel internally stores multiple of extremely high frequency samples. Variable pixel geometry per row is very advantageous for Echelle spectrograph, where pixel heights are aligned with the spectrograph “order separator” where the resolution changes. In combination with variable geometry, externally adjustable full-well provides for superior spectral line separation in spectroscopy applications. In one embodiment multiple time windows with intermittent resets are stored within each pixel. This feature allows for the detection of extreme high frequency consecutive events without saturation such as may be the case with LIBS (Laser Induced Breakdown Spectroscopy).06-30-2011
20110155889CONTACT IMAGE SENSING MODULE - A contact image sensor module includes an image sensor, a lens unit arranged over the image sensor, a glass plate arranged over the lens unit, and a light source. The lens unit includes a plurality of rod lenses. The glass plate is wedge-shaped and elongated. The glass plate includes a first light interface being rectangular and elongated, and a second light interface and an incident face respectively extending from two opposite longer sides of the first light interface. The incident face faces the light source. The first light interface is substantially perpendicular to the rod lenses. The second light interface is below the first light interface and faces top sides of the rod lenses. Light of the light source is first directed by the glass plate to the document, then reflected by the document to the lens unit via the glass plate and finally reaching the image sensor.06-30-2011
20120061555ANALOG-TO-DIGITAL CONVERTER WITH PROGRAMMABLE RAMP GENERATOR - An analog-to-digital (ADC) converter is disclosed that uses aspects of a single-slope ramp ADC, but with jump steps in the ramp voltage to increase speed. A programmable ramp generator can be used to dynamically modify a voltage level associated with the jump step. By programming a voltage level of the jump, a user can dynamically modify the speed of the ADC during operation.03-15-2012
20120061554QUANTITATIVE DIFFERENTIAL INTERFERENCE CONTRAST (DIC) MICROSCOPY AND PHOTOGRAPHY BASED ON WAVEFRONT SENSORS - Embodiments of the present invention relate to a wavefront sensor comprising a film and a photodetector. The film has one or more structured two dimensional apertures configured to convert a phase gradient of a wavefront into a measurable form. The photodetector is configured to receive the wavefront through the one or more 2D apertures and measure the phase gradient of the wavefront.03-15-2012
20120153127IMAGE SENSOR WITH REDUCED CROSSTALK - An image sensor having a semiconductor substrate, at least two photosites in the substrate and an isolation region between the photosites. The isolation region has a first trench covered by a thin electrically insulating liner and filled with an electrically conductive material, the conductive material has a second trench at least partially filled with an optically isolating material.06-21-2012
20120153126SOLID-STATE IMAGING ELEMENT, DRIVING METHOD, AND ELECTRONIC APPARATUS - Disclosed herein is a solid-state imaging element including: a plurality of unit pixels each having a photoelectric conversion part, a transfer part that transfers a charge generated by the photoelectric conversion part to a predetermined region, and a draining part that drains a charge in the predetermined region; a light shielding film being formed under an interconnect layer in the unit pixels and shield, from light, substantially the whole surface of the plurality of unit pixels except a light receiving part of the photoelectric conversion part; and a voltage controller controlling a voltage applied to the light shielding film. The voltage controller sets the voltage applied to the light shielding film to a first voltage in charge draining by the draining part and sets the voltage applied to the light shielding film to a second voltage higher than the first voltage in charge transfer by the transfer part.06-21-2012
20120153125SOLID-STATE IMAGE PICKUP DEVICE, METHOD OF DRIVING SOLID-STATE IMAGE PICKUP DEVICE, AND ELECTRONIC INSTRUMENT - A CMOS image sensor has an image array as a matrix of unit pixels each including at least a photodiode, a memory for holding a charge stored in the photodiode, a floating diffusion region for converting the charge in the memory into a voltage, a first transfer gate for transferring the charge from the photodiode to the memory, a second transfer gate for transferring the charge from the memory to the floating diffusion region, and a resetting transistor for resetting the charge in the floating diffusion region. The unit pixels are driven to set the potential of a potential barrier at a boundary between the memory and the floating diffusion region to a potential such that a charge overflowing the memory is transferred to the floating diffusion region, when the first transfer gate is turned on. The CMOS image sensor operates in a global shutter mode for capturing moving images.06-21-2012
20120153123IMAGE SENSOR HAVING SUPPLEMENTAL CAPACITIVE COUPLING NODE - An image sensor includes a pixel array, a bit line, supplemental capacitance node line, and a supplemental capacitance circuit. The pixel array includes a plurality of pixel cells each including a floating diffusion (“FD”) node and a photosensitive element coupled to selectively transfer image charge to the FD node. The bit line is coupled to selectively conduct image data output from a first group of the pixel cells. The supplemental capacitance node line is coupled to the FD node of a second group of the pixel cells to selectively couple a supplemental capacitance to the FD nodes of the second group in response to a control signal. In various embodiments, the first and second group of pixel cells may be the same group or a different group of the pixel cells and may add a capacitive boost feature or a multi conversion gain feature.06-21-2012
20120153124VERTICALLY STRUCTURED PASSIVE PIXEL ARRAYS AND METHODS FOR FABRICATING THE SAME - An image sensor and methods of use the image sensor, methods of manufacturing the image sensor, and apparatuses comprising the image sensor are disclosed. The image sensor has pixels includes at least one nanopillar with a gate electrode surrounding the at least one nanopillar, wherein the at least one nanopillar is adapted to convert light impinging thereon to electrical signals and the gate electrode is operable to pinch off or allow current flow through the at least one nanopillar. The image sensor can have a plurality of pixels arranged in an individually addressable fashion. The at least one nanopillar has a cladding. A refractive index of the cladding being smaller than a refractive index of the nanopillar.06-21-2012
20120153122Imaging Array With Separate Charge Storage Capacitor Layer - An imaging array comprises a photodetector layer, a readout IC (ROIC) layer, and a charge storage capacitor layer which is distinct from the photodetector and ROIC layers; the layers are electrically interconnected to form the array. The capacitors within the charge storage capacitor layer are preferably micromachined; the charge storage capacitor layer can be an interposer layer or an outer layer.06-21-2012
20120006975SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus comprises first accumulation units, of which number is n, holding a digital value of n-bits output from a counter, second accumulation units, of which number is n, holding the digital value of n-bits transferred from the first accumulation units, of which number is n, and an A/D converter writing the digital value of n-bits from the counter based on an image signal generated by pixels into the first accumulation units, of which number is n, wherein correspondingly to each column of the pixels, the first accumulation unit of m-th bit (1≦m≦n) and the second accumulation unit of m-th bit (1≦m≦n) are arranged and paired, and the pairs of which number is n are arranged in a direction along the column of pixels.01-12-2012
20120006974SOLID-STATE IMAGING DEVICE - According to one embodiment, a solid-state imaging device includes a pixel outputting a photoelectrically converted signal, an ADC circuit disposed in an edge portion of a pixel area to convert an analog signal of the pixel into a digital signal on the basis of a result of comparison between a signal level output from the pixel and a ramp wave which is a reference, and a multi-ramp-wave generating circuit generating a plurality of ramp waves with different amplitudes and combining the plurality of ramp waves to obtain the ramp wave.01-12-2012
20120006971RADIATION-HARDENED ROIC WITH TDI CAPABILITY, MULTI-LAYER SENSOR CHIP ASSEMBLY AND METHOD FOR IMAGING - An integrated circuit for generating image data comprises a focal-plane array of unit cells, a controller, and a memory structure having a plurality of storage locations. Each unit cell may store charge based on detected photons. The controller may read a value based on the stored charge from at least some of the unit cells, and either add the read value to an existing value in the corresponding storage location when operating in frame-sum mode, or add the read value to an existing value in a shifted storage location when operating in time-delay integration (TDI) mode. This may allow faint objects as well as objects moving in the field-of-view of the focal-plane array to be observed. The integrated circuit may be fabricated from radiation-hardened CMOS technology and may be a layer of a sensor chip assembly.01-12-2012
20120012736Image Sensor - Image sensor, comprising a matrix of active pixels having several columns for delivering at least one information signal of an active pixel, the sensor comprising means for processing the information signals delivered by the said active pixels which comprise at least one amplification stage biased by a current source, the processing means comprising a device for voltage-limiting the signal delivered on an output terminal of the said at least one amplification stage comprising an input terminal connected to the output terminal, a first transistor connected between the input terminal and a reference terminal connected to a reference power supply source, a gain device comprising an input connected to the input terminal, an output connected to the gate of the first transistor and configured so as to decrease the voltage span necessary to cause the first transistor to toggle from its off state to a state in which it absorbs the current provided by the said current source.01-19-2012
20100230578Solid-state image pickup apparatus, method of manufacturing the same, and image pickup apparatus - A solid-state image pickup apparatus includes a substrate, a wiring layer, and a waveguide. The substrate is provided with a pixel array portion constituted of a plurality of pixels each having a photoelectric converter that converts incident light into an electrical signal. The wiring layer includes a plurality of wirings and an insulating layer that covers the plurality of wirings that are laminated above the substrate. The waveguide guides light to each of the photoelectric converters of the plurality of pixels, the waveguide being formed in the wiring layer. The waveguide is formed to have a waveguide exit end from which light exits the waveguide so that a distance between the waveguide exit end and a surface of the photoelectric converter that receives light from the waveguide become shorter, as wavelengths of light guided by the waveguide are longer.09-16-2010
20120056076MATERIALS, SYSTEMS AND METHODS FOR OPTOELECTRONIC DEVICES - A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.03-08-2012
20120056075MATERIALS, SYSTEMS AND METHODS FOR OPTOELECTRONIC DEVICES - A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.03-08-2012
20120056074MATERIALS, SYSTEMS AND METHODS FOR OPTOELECTRONIC DEVICES - A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.03-08-2012
20120056073PIXEL, METHOD OF MANUFACTURING THE SAME, AND IMAGE PROCESSING DEVICES INCLUDING THE SAME - A pixel of an image sensor includes a color filter configured to pass visible wavelengths, and an infrared cut-off filter disposed on the color filter configured to cut off infrared wavelengths.03-08-2012
20120153131SOLID-STATE IMAGE PICKUP DEVICE - A solid-state image pickup device includes: plural pixel cells that are two-dimensionally arrayed, the pixel cell including a photoelectric conversion element and an amplification transistor; plural vertical signal lines; at least two reference current source circuits that includes a reference transistor; and plural load transistors each of which is connected to the vertical signal line, the load transistor constituting a current mirror in conjunction with the reference transistor. The load transistor and the reference transistor are grounded to a common ground line in different positions, and, in at least two position, a distance between connection points at which the load transistor and the reference transistor, which constitute the current mirror, are grounded to the ground line is shorter than a distance between connection points of the load transistors adjacent to each other on the ground line.06-21-2012
20120104235METHOD OF CONTROLLING SEMICONDUCTOR DEVICE, SIGNAL PROCESSING METHOD, SEMICONDUCTOR DEVICE, AND ELECTRONIC APPARATUS - A pre-amplifier (column region unit) of a solid-state imaging device including a pixel-signal controller. The pixel-signal controller, for each vertical signal line, detects the level of each pixel signal independently by a pixel-signal detector on the output side of a pixel-signal amplifier, and sets a gain independently to the pixel-signal amplifier according to the level of the signal. At a subsequent stage of the solid-state imaging device, an analog-to-digital (A/D) converter and a signal extending unit are provided. The A/D converter digitizes a pixel signal, and the digitized pixel signal is corrected by a gain set to the pixel-signal amplifier with reference to a classification signal from the pixel-signal detector, so that the dynamic range of signals of one screen is extended.05-03-2012
20120205520IMAGE SENSOR AND SENSING METHOD THEREOF - An image sensor including a pixel array is provided. The pixel array includes R×S sub-pixel arrays. The sub-pixel array includes P×Q pixels. Each pixel includes a photodiode, a first transistor, a second transistor, a third transistor, a fourth transistor, and a fifth transistor. The gate of the second transistor is coupled to a row control signal. The second source/drain electrode of the second transistor is coupled to a column control signal. The gate electrode of the third transistor is coupled to a reset signal. The second source/drain electrode of the third transistor is coupled to a column voltage reset signal. The gate electrode of the fifth transistor is coupled to a row select signal. The sub-pixel array uses the row control signal, the column control signal, the column voltage reset signal, and the row select signal to select an output the sensing signal of one of the pixels.08-16-2012
20120061553Imaging device and imaging apparatus - An imaging device includes: a photoelectric conversion layer in which photoelectric conversion devices that convert received light into charge are arranged in a planar fashion; and a conductor structure layer provided on an upper surface or a lower surface of the photoelectric conversion layer and formed by stacking plural conductor layers having conductor metals with concavo-concave structures at predetermined periodic intervals within a plane in parallel to light receiving surfaces of the photoelectric conversion devices.03-15-2012
20120235023Solid-State Image-Sensing Device and Camera Provided Therewith - By feeding an appropriate voltage as a signal φTX to a transfer gate TG, a MOS transistor T09-20-2012
20110049333SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a solid-state imaging device with a plurality of light-receiving layers for acquiring different color signals stacked one on top of another in the optical direction. Each of the light-receiving layers includes a photoelectric conversion part that receives light entering the back side of the layer and generates signal charges and a read transistor that is provided on the front side of the layer and reads the signal charges generated at the photoelectric conversion part. A semiconductor layer is stacked via an insulating film on the front side of the top layer of the plurality of light-receiving layers. At the semiconductor layer, there is provided a signal scanning circuit which processes a signal read by each of the read transistors and outputs a different color signal from each of the light-receiving layers to the outside.03-03-2011
20110049332PHOTOELECTRIC CONVERSION DEVICE, IMAGE SENSING SYSTEM, AND METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE - A photoelectric conversion device having a pixel array region in which a plurality of pixels each including a photoelectric converter are arrayed, and a peripheral region arranged around the pixel array region, the device comprising a multilayer wiring structure which is arranged on a semiconductor substrate, and includes wiring layers in the peripheral region more than wiring layers in the pixel array region, and a plurality of interlayer lenses which is arranged on the multilayer wiring structure in the pixel array region, wherein the plurality of interlayer lenses each includes a first insulator, and a second insulator arranged to cover the first insulator, and having a refractive index higher than the first insulator, and wherein the first insulator in each of the plurality of interlayer lenses, and an uppermost interlayer insulating film in the peripheral region in the multilayer wiring structure are made of an identical material.03-03-2011
20110049331SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a method of manufacturing a back-illuminated solid-state imaging device including forming a mask with apertures corresponding to a pixel pattern on the surface of a semiconductor layer, implanting second-conductivity-type impurity ions into the semiconductor layer from the front side of the layer to form second-conductivity-type photoelectric conversion parts and forming a part where no ion has been implanted into a pixel separation region, forming at the surface of the semiconductor layer a signal scanning circuit for reading light signals obtained at the photoelectric conversion parts after removing the mask, and removing the semiconductor substrate and a buried insulating layer from the semiconductor layer after causing a support substrate to adhere to the front side of the semiconductor layer.03-03-2011
20110049330IMAGE SENSOR, METHOD AND DESIGN STRUCTURE INCLUDING NON-PLANAR REFLECTOR - A solid state image sensor, a method for fabricating the solid state image sensor and a design structure for fabricating the solid state image sensor structure include a substrate that in turn includes a photosensitive region. Also included within solid state image sensor is a non-planar reflector layer located over a side of the photosensitive region and the substrate opposite an incoming radiation side of the photosensitive region and the substrate. The non-planar reflector layer is shaped and positioned to reflect uncaptured incident radiation back into the photosensitive region while avoiding optical cross-talk with an additional photosensitive region laterally separated within the substrate.03-03-2011
20120153130SOLID-STATE IMAGE PICKUP DEVICE AND CONTROL METHOD THEREOF - An image sensor controls the gain of a pixel signal on a pixel-by-pixel basis and extends a dynamic range while maintaining a S/N ratio at a favorable level. A column unit in an image sensor is independently detects a level of each pixel signal and independently sets a gain for level of the signal. A photoelectric converting region unit has pixels arranged two-dimensionally with a vertical signal line for each pixel column to output each pixel signal. The column unit is on an output side of the vertical signal line. The column unit for each pixel column has a pixel signal level detecting circuit, a programmable gain control, a sample and hold (S/H) circuit. Gain correction is performed according to a result of a detected level of the pixel signal.06-21-2012
20120153128IMAGE SENSOR WITH REDUCED OPTICAL CROSSTALK - A method of fabricating an image sensor includes the steps of: forming at least two photosites in a semiconductor substrate; forming a trench between the photosites; forming a thin liner on at least the sidewalls of the trench; depositing a conductive material having a first refractive index in the trench; and forming a region surrounded by the conductive material and having a second refractive index lower than the first index of refraction within the conductive material in the trench.06-21-2012
20120153129IMAGING APPARATUS - An imaging apparatus which can provide a uniform magnetic field distribution in an image pickup device and can be reduced in size includes an electron emission source array with a plurality of electron emission sources arranged on a plane perpendicular to an optical axis, and a translucent substrate having an optoelectronic film disposed on the optical axis to be opposed to the electron emission source array with a space therebetween. The imaging apparatus has a magnet portion for forming in the space a magnetic field in a direction orthogonal to each principal plane of the translucent substrate and the electron emission source array. The magnet portion includes a plurality of magnets which are disposed in parallel to the optical axis so that the respective magnetic poles thereof are arranged in a forward direction in parallel to the optical axis and will not contact with each other.06-21-2012
20120112042MOLDED IMAGE SENSOR PACKAGE AND METHOD - An image sensor package includes an image sensor, a window, and a molding, where the molding includes a lens holder extension portion extending upwards from the window. The lens holder extension portion includes a female threaded aperture extending from the window such that the window is exposed through the aperture. A lens is supported in a threaded lens support. The threaded lens support is threaded into the aperture of the lens holder extension portion. The lens is readily adjusted relative to the image sensor by rotating the lens support.05-10-2012
20120119068SOLID STATE IMAGE SENSOR - A solid state image sensor includes a plurality of pixels, each having a photoelectric conversion section formed in the inside of a substrate and a light-receiving section formed on the side of a light-receiving surface of the substrate. At least a part of the plurality of pixels is ranging pixels. The light-receiving section of each of the ranging pixels is equipped with a guided mode resonant filter adapted to reflect incident light getting into the inside of the light-receiving section at a specific incident angle. The normal line of the guided mode resonant filter is inclined relative to the principal ray of the flux of light entering the guided mode resonant filter.05-17-2012
20110089313SOLID STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND IMAGING APPARATUS - A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section.04-21-2011
20110089312SOLID STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND IMAGING APPARATUS - A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section.04-21-2011
20110089311TRENCH TRANSFER GATE FOR INCREASED PIXEL FILL FACTOR - An image sensor provides high scalability and reduced image lag. The sensor includes a first imaging pixel that has a first photodiode region formed in a substrate of the image sensor. The sensor also includes a first vertical transfer transistor coupled to the first photodiode region. The first vertical transfer transistor can be used to establish an active channel. The active channel typically extends along the length of the first vertical transfer transistor and couples the first photodiode region to a floating diffusion.04-21-2011
200901343134T CMOS IMAGE SENSOR WITH FLOATING DIFFUSION GATE CAPACITOR - Pixel cells are provided which employ a gate capacitor associated with the floating diffusion node to selectively increase the storage capacity of the floating diffusion node. The gate capacitor can be formed at the same time as the same process steps used to form other gates of the pixel cells. The inherent capacity of the storage node alone may be sufficient under low light conditions. Higher light conditions may result in selective activation of the gate capacitor, thus increasing the capacity of the storage node with the additional capacity provided by the gate capacitor. The invention produces high dynamic range and high output signal without charge sharing or lag output signal. Methods of forming such pixel cells can be applied in CMOS and CCD imaging devices, image pixel arrays in CMOS and CCD imaging devices, and CMOS and CCD imager systems.05-28-2009
20120211640IMAGING APPARATUS AND IMAGING SYSTEM - An intermediate member is disposed between a peripheral region and a third region, having been fixed to an imaging plate and a retaining plate. The intermediate member does not extend to between at least a part of a middle region and a forth region, such that a void is provided. The difference between the linear expansion coefficient of the imaging plate and the linear expansion coefficient of the intermediate member is smaller than the difference between the linear expansion coefficient of the retaining plate and the linear expansion coefficient of the intermediate member.08-23-2012
20120119065IMAGE SENSOR - An image sensor for electronic cameras has an image field having at least one image field block which includes a plurality of light sensitive pixels arranged in rows and columns for generating exposure dependent pixel signals, wherein the pixel signals of the pixels of the respective column of the respective image field block can be read out via one or more respective column lines extending parallel to one another. The image sensor has at least one first row of column amplifiers and at least one second row of column amplifiers for the respective image field block. The image sensor is adapted to read out the pixel signals of the pixels of the respective column of the respective image field block of an image or of two mutually following images partly via the at least one first row and partly via the at least one second row of column amplifiers (05-17-2012
20100288911SOLID-STATE IMAGING DEVICE, ELECTRONIC APPARATUS, AND METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE - A solid state imaging device that includes a semiconductor substrate having a plurality of photodiodes thereon and a first wiring portion, a second wiring portion and a third wiring portion, a first wiring layer over the semiconductor substrate and which includes a plurality of metal films and extends across all the wiring portions, and a second wiring layer over the first wiring layer and which extends across the first wiring portion and the second wiring portion.11-18-2010
20100288910ADAPTIVE SPATIAL-SPECTRAL PROCESSING (ASSP) - A hyperspectral imaging sensor and an adaptive spatial spectral processing filter capable of detecting, identifying, and/or classifying targets having a spatial extent of one pixel or less includes a sensor that may be oversampled such that a pixel is spatially smaller than the optical blur or point spread function of the sensor. Adaptive spatial spectral processing may be performed on hyperspectral image data to detect targets having spectral features that are known a priori, and/or that are anomalous compared to nearby pixels. Further, the adaptive spatial spectral processing may recover target energy spread over multiple pixels and reduce background clutter to increase the signal-to-noise ratio.11-18-2010
20120312963IMAGE SENSOR ARRANGEMENT - Each column of pixels in an image sensor array has at least two column bitlines connected to an output of each pixel. A readout input circuit includes first inputs and a second input. Each first input is connected, via a capacitance, to a comparator input node. The second input is connected via a capacitance to the same comparator input node. The first inputs receive, in parallel, an analog signal acquired from the pixels via the column bitlines. The analog signals vary during a pixel readout period and have a first level during a first calibration period and a second level during a second read period with the analog signals being constantly read onto the capacitances during both the first calibration period and the second read period. The comparator compares an average of the signals on the plurality of first inputs to the reference signal.12-13-2012
20120126097IMAGE SENSING DEVICE USING A PHOTOELECTRIC CONVERTER AND A CONTROL METHOD THEREFOR - An image sensing apparatus has a plurality of pixels arranged two dimensionally, each pixel containing a photoelectric converter that outputs a photoelectrically converted signal in response to a quantity of received light, an output unit containing a clamping circuit, a signal supply circuit that outputs a reference signal to the clamping circuit, a control unit that controls to clamp the reference signal prior to outputting the photoelectrically converted signal from the pixel to the clamping circuit, output the photoelectrically converted signal to the clamping circuit, and then output a noise signal from the pixel to the clamping circuit, and a differential circuit that subtracts the noise signal from the photoelectrically converted signal processed by the clamping circuit.05-24-2012
20120126096SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD OF SOLID-STATE IMAGING DEVICE - According to one embodiment, a semiconductor layer in which a photoelectric conversion unit is formed for each pixel, a readout circuit that is formed on a front side of the semiconductor layer and reads out a signal from the photoelectric conversion unit, a light incident surface provided on a back side of the photoelectric conversion unit, and a gettering layer provided on a front side of the photoelectric conversion unit are included.05-24-2012
20120126094ANALOG TO DIGITAL RAMP CONVERTER - A method of analog to digital voltage conversion including: generating a quadratic signal based on an analog time varying reference signal; generating a ramp signal based on the quadratic signal; and converting an analog input voltage to a digital output value based on a time duration determined by a comparison of the analog input voltage with the ramp signal.05-24-2012
20120248291UNIT PIXEL, SOLID-STATE IMAGE SENSING DEVICE, AND METHOD FOR SUMMING UNIT PIXEL SIGNALS - A unit pixel has a light receiving device containing a photoelectric conversion element for detecting a light to generate photoelectrons. The light receiving device contains a plurality of photoelectron distributors, which each have a first transfer unit for transferring the photoelectrons generated in the photoelectric conversion element, a photoelectron hold unit for temporarily holding the photoelectrons generated in the photoelectric conversion element, a second transfer unit for transferring the photoelectrons held in the photoelectron hold unit, and a floating diffusion layer for storing the transferred photoelectrons and converting the photoelectrons to a voltage. The unit pixel contains a reset transistor for resetting the potential of the floating diffusion layer to a reference potential and a photoelectron discharger for discharging the photoelectrons generated in the photoelectric conversion element.10-04-2012
20120248290SOLID-STATE IMAGE SENSING DEVICE - A solid-state image sensing device comprises a unit pixel containing a photoelectric conversion element for detecting a light to generate photoelectrons and at least one electrode for forming an MOS diode structure, a first contact point connected to a first voltage supply for supplying a first voltage to the electrode, a second contact point connected to a second voltage supply for supplying a second voltage higher than the first voltage to the electrode, a first capacitor disposed between the first and second contact points, a change-over switch connected to one of the first and second contact points to selectively switch a voltage applied to the electrode to the first voltage or the second voltage, and pixel drive circuits for driving the change-over switch, thereby alternately applying the first voltage and the second voltage to the electrode to generate, hold, transfer, reset, or discharge the photoelectrons.10-04-2012
20100224759SOLID-STATE IMAGING DEVICE, ELECTRONIC EQUIPMENT AND MANUFACTURING METHOD OF THE SOLID-STATE IMAGING DEVICE - Disclosed herein is a solid-state imaging device including, active elements configured to handle the charge captured in a photoreceiving region, an element isolation region configured to isolate regions of the active element, a first impurity region configured to surround the element isolation region, and a second impurity region including an impurity region lower in impurity concentration than the first impurity region, the second impurity region being provided between the first impurity region and active elements.09-09-2010
20100207011SYSTEM AND METHOD FOR PERFORMING OPTICAL NAVIGATION USING A COMPACT OPTICAL ELEMENT - A system and method for performing optical navigation uses an illumination optical element positioned between a light source and a navigation surface to bend and collimate a beam of light from the light source, which may be originally emitted in a direction normal to the navigation surface. The illumination optical element includes a concave surface to receive the beam of light from the light source and a convex surface to transmit the beam of light from the illumination optical element toward the navigation surface. The beam of light incident on the navigation surface produces light, which is received at an image sensor array to capture frames of image data for displacement estimation.08-19-2010
20120211641CONTIGUOUS MICROLENS ARRAY - The present disclosure provides a contiguous microlens array, which consists of a plurality of touching microlenses, wherein the adjacent microlenses are connected to each other to form a contiguous microlens array and curvatures of every angle cross section of each microlens are the same. The shape of the curved surface of a microlens in the microlens array is selectively adjusted according to its position in the array and the incident angle of light incident thereto.08-23-2012
20120132786SOLID STATE IMAGING DEVICE - According to one embodiment, a solid state imaging device includes a pixel cell including an FD node to convert a charge stored in a photodiode into a signal voltage and an amplifier transistor in which a gate is connected to the FD node, a source is connected to an output signal line, and a drain is connected to a pixel-power node, a voltage control portion including a first control transistor in which a gate sets to a first bias voltage, a source is connected to the output signal line, and a drain is connected to a first control portion-power node, a load circuit including a current source connected directly between one end of the output signal line and a source power supply node, and a control circuit which controls an operation to decide a reset voltage of the output signal line. The control circuit boosts the FD node.05-31-2012
20120132787SOLID-STATE IMAGING DEVICE, DRIVING METHOD THEREOF, AND ELECTRONIC DEVICE - Disclosed herein is a solid-state imaging device including a pixel region in which a plurality of pixels are arranged. The pixels each includes a photoelectric conversion section, a transfer transistor, a plurality of floating diffusion sections receiving a charge from the photoelectric conversion section through the transfer transistor, a reset transistor resetting the floating diffusion sections, a separating transistor performing on-off control of a connection between the plurality of floating diffusion sections, and an amplifying transistor outputting a signal corresponding to a potential of the floating diffusion sections.05-31-2012
20110180690SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes a photoelectric conversion section which is provided for each pixel and which converts light incident on a first surface of a substrate into signal charges, a circuit region which reads signal charges accumulated by the photoelectric conversion section, a multilayer film including an insulating film and a wiring film, the multilayer film being disposed on a second surface of the substrate opposite to the first surface, and a transmission-preventing film disposed at least between the wiring film in the multilayer film and the substrate.07-28-2011
20110180689COMPACT IMAGE SENSOR ARRANGEMENT - An image sensor having a number of pixel zones delimited by isolation trenches, each pixel zone including a photodiode; a transfer gate associated with each of the pixel zones and arranged to transfer charge from the photodiode to a sensing node; and a read circuit for reading a voltage at one of the sensing nodes, the read circuitry including a number of transistors of which at least one is positioned at least partially over a pixel zone of the pixel zones.07-28-2011
20120168611IMAGE SENSOR PIXEL WITH GAIN CONTROL - A method for reading out an image signal includes providing at least two photosensitive regions and providing at least two transfer gates respectively associated with each photosensitive region. The method also includes providing a common charge-to-voltage conversion region electrically connected to the transfer gates and providing a reset mechanism that resets the common charge-to-voltage conversion region. After transferring charge from at least one of the photo-sensitive regions, all the transfer gates are disabled at a first time. The method further includes enabling at least one transfer gate at a subsequent second time and transferring charge from at least one of the photosensitive regions at a subsequent third time while the at least one transfer gate from the second time remains enabled.07-05-2012
20120168610SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus includes: a pixel region including a plurality of pixels, each including a photoelectric conversion element, arranged in matrix, and a reset switch for discharging electric charge of the photoelectric conversion element; and a first scanning circuit for supplying a reset control signal for controlling an operation of the reset switch, the pixel region and the first scanning circuit being formed on a semiconductor substrate, in which the pixel region includes a first pixel region and a second pixel region, and the first scanning circuit includes a first decoder for controlling the operation of the reset switch arranged in the first pixel region, and a second decoder for controlling the operation of the reset switch arranged in the second pixel region.07-05-2012
20120168609IMAGE SENSORS AND METHODS WITH HIGH SPEED GLOBAL SHUTTER PIXELS - An image sensor includes a plurality of pixels and a row driver. Each pixel includes a photodiode, a first transfer gate, a second transfer gate, a first storage node, and a second storage node. The row driver is configured to provide signals to the first transfer gate and the second transfer gate of each pixel such that charge is transferred from the photodiode to the first storage node through the first transfer gate while a signal representing charge stored at the second storage node is output from the pixel to a column readout line. The row driver is also configured to provide signals to the first transfer gate and the second transfer gate such that charge is transferred from the photodiode to the second storage node through the second transfer gate while a signal representing charge stored at the first storage node is output from the pixel.07-05-2012
20100176271PIXEL ARRAY PREVENTING THE CROSS TALK BETWEEN UNIT PIXELS AND IMAGE SENSOR USING THE PIXEL - The present invention provides a pixel array having a three-dimensional structure and an image sensor having the pixel array. The pixel array has a three-dimensional structure in which a photodiode, a transfer transistor, a reset transistor, a convert transistor, and a select transistor are divided and formed on a first wafer and a second wafer, chips on the first and second wafers are connected in a vertical direction after die-sorting the chips. The first wafer includes a plurality of photodiodes for generating electric charges corresponding to an incident video signal, a plurality of transfer transistors for transferring the electric charges generated by the photodiodes to floating diffusion regions, a plurality of STIs circling one of the photodiodes and one transfer transistor connected to the one photodiode, a first super-contact which extends from a lower portion of the plurality of the STIs to a lower surface of the wafer, and a second super-contact which penetrates the plurality of the STIs and a portion of the first super-contact. The electric charges accumulated in the floating diffusion regions are transferred to the second wafer through the second super-contact.07-15-2010
20120248289IMAGING DEVICE, IMAGING METHOD, AND COMPUTER READABLE STORAGE MEDIUM - There is provided an imaging device that has: an image pick-up element that picks-up an image of a subject and transfers an image pick-up signal that has been picked-up; cooling unit that cools the image pick-up element; a temperature sensor that detects a temperature of the image pick-up element; pulse width modulation control unit that controls the cooling unit by a pulse width modulation signal, on the basis of the temperature detected by the temperature sensor; and transfer control unit that, on the basis of a duty ratio of the pulse width modulation signal, controls transfer of the image pick-up signal such that transfer of the image pick-up signal is suspended at a timing that includes at least one of a rise and a fall of the pulse width modulation signal.10-04-2012
20120248292LENS-FREE WIDE-FIELD SUPER-RESOLUTION IMAGING DEVICE - A system for imaging objects within a sample includes an image sensor and a sample holder configured to hold the sample, the sample holder disposed adjacent to the image sensor. The system further includes an illumination source configured to scan in two or three dimensions relative to the sensor array and illuminate the sample at a plurality of different locations. The illumination source may include, by way of example, LEDs, laser diodes, or even a screen or display from a portable electronic device. The system includes least one processor configured to reconstruct an image of the sample based on the images obtained from illumination source at the plurality of different scan positions.10-04-2012
20120211643IMAGING SYSTEM AND IMAGING DEVICE - An imaging system includes an A/D converter including a holding unit holding a pixel signal as a voltage level, a comparator comparing the voltage level held with a reference level, a circuit capable of changing the voltage level so as to approach the reference level at first and second rates, wherein the voltage level is changed at the first rate to determine higher bits in accordance with inversion of a relationship between the reference level and the voltage level, after that, the voltage level is changed at the second rate to determine lower bits in accordance with inversion of the relationship between the reference level and the voltage level, and an adjusting unit which adjusts the voltage level during a period until the voltage level is changed at the second rate after determination of the higher bits so that the lower bits and the voltage level hold a linear relationship.08-23-2012
20120211642Solid-State Imaging Device - Provided is a solid-state imaging device comprising a plurality of pixel circuits GC having photoelectric conversion characteristics including linear characteristics and logarithmic characteristics on either side of an inflection point. The pixel circuits GC each include a photoelectric conversion element PD which accumulates a signal charge by exposing a subject, and a floating diffusion FD which converts the signal charge accumulated by the photoelectric conversion element PD into a voltage signal. The floating diffusion FD is set to have an operating charge that is smaller than a saturation charge of the photoelectric conversion element PD.08-23-2012
20120223214Light Guided Pixel - A light guided pixel having a guide layer and a light detector layer. The guide layer has a light guide. The light detector layer has a light detecting element that receives light channeled by the light guide. The light guide may include a filter for channeling emissions to the light detecting element.09-06-2012
20120312964IMAGE PICKUP APPARATUS - An image pickup apparatus includes a plurality of pixels each including a read-out node to which an electric charge generated in a photoelectric conversion unit is transferred, an output unit configured to convert the electric charge transferred to the read-out node into a voltage and output the resultant voltage to a signal line, and a switch including a first node electrically connected to the read-out node. Each switch includes a second node different from the first node, and a particular number of second nodes are electrically connected to a common bypass wiring.12-13-2012
20090057537PIXEL WITH SPATIALLY VARYING SENSOR POSITIONS - An image sensor including a substrate, at least one metal layer, and a plurality of pixels arranged in array. Each pixel includes a sense element disposed in the substrate and at least one metal interconnect segment disposed in the at least one metal layer. The array includes a pair of perpendicular axes extending from an optical center, wherein for a line of pixels extending perpendicularly from one of the axes to a peripheral edge of the array a spacing between the sense elements of consecutive pairs of pixels of the line is at least equal to a spacing between the associated at least one metal interconnect segments, and wherein for at least one consecutive pair of pixels of the line the spacing between the sense elements is greater by an incremental amount than the spacing between the corresponding at least one metal interconnect segments.03-05-2009
20090057539SOLID-STATE IMAGE PICKUP DEVICE, ELECTRONIC APPARATUS USING SUCH SOLID-STATE IMAGE PICKUP DEVICE AND METHOD OF MANUFACTURING SOLID-STATE IMAGE PICKUP DEVICE - A back-illuminated type solid-state image pickup device (03-05-2009
20090057538Image reading device and image reading method - An image reading device which reads a document as an image includes a light source unit, a light receiving unit, a transporting mechanism which relatively transports either one of the light receiving unit or the document, a light reception control unit, and an irradiation control unit which irradiates the light receiving unit with the light from the document during a first light receiving period starting from a beginning point of the charging period and a second light receiving period ending at an ending point of the charging period and which does not irradiate the light receiving unit with the light from the document between the first light receiving period and the second light receiving period.03-05-2009
20090057536IMAGE SENSOR AND ELECTROMAGNETIC RADIATION IMAGING DEVICE - To provide a small-size image sensor and electromagnetic radiation imaging device which can obtain a good image without relying on the condition of an object, the image sensor including a plurality of pixel units arranged two-dimensionally, wherein each of the plurality of pixel units includes: a first photodiode and a second photodiode; a readout circuit which reads a signal generated by the first photodiode and a signal generated by the second photodiode, and outputs the read signals, the readout circuit being connected to the first photodiode and the second photodiode; and a difference circuit which outputs a difference signal corresponding to a difference between the signal read from the first photodiode and the signal read from the second photodiode, the difference circuit being connected to the readout circuit.03-05-2009
20090057535CMOS image sensor and operating method thereof - A CMOS image sensor may be provided. The CMOS image sensor may include at least one floating diffusion column line, a plurality of pixels, and/or a charge/voltage conversion circuit. The plurality of pixels may be connected to the floating diffusion column line in parallel. The charge/voltage conversion circuit may be connected to one end of the floating diffusion column line, and may detect a potential variation of the floating diffusion column line using a coupling capacitor.03-05-2009
20110186713DATA PROCESSING METHOD AND SOLID-STATE IMAGE PICKUP DEVICE - A data processing method may include counting one of a plurality of clock signals with a first mode, counting clock signals based on a predetermined number of the plurality of clock signals with the first mode, to output a first clock signal every time a counter value becomes a first predetermined value, counting the first clock signal with the first mode, counting one of the clock signals with a second mode while the counted value is considered as a first initial value, counting clock signals based on the predetermined number of the plurality of clock signals with the second mode, to output a second clock signal every time the counter value becomes a second predetermined value while the counted value is considered as a second initial value, counting the second clock signal with the second mode, and outputting the counter values with the second mode as difference data between a first data signal and a second data signal.08-04-2011
20110204206Rain sensor - There is provided a rain sensor capable of adequately detecting raindrops in a captured image. The rain sensor includes: a surface light source 08-25-2011
20100051784IN-PIXEL SUMMING OF CHARGE GENERATED BY TWO OR MORE PIXELS HAVING TWO RESET TRANSISTORS CONNECTED IN SERIES - An image sensor includes (a) a plurality of pixels, wherein each pixel comprises:(i) at least one photosensor; (ii) at least one transfer gate connecting the photosensor to a floating diffusion; (iii) an output transistor connected to the floating diffusion; (iv) a first reset transistor connected between the floating diffusion and a summing node; (v) a second reset transistor connected to the summing node; and (b) a first summing transistor connecting together the summing nodes of two or more pixels.03-04-2010
20120312966RANGE IMAGE SENSOR - Since the accumulation regions fd12-13-2012
20080210848COLUMN CURRENT SOURCE - A column current source for an image sensor includes an array of pixels arranged in rows and columns, a reference current source, a transistor connected as a source follower to the reference current source and forming one half of a current mirror, and a plurality of current sources each connected to a column of pixels and with each current source forming the other half of the current mirror, thereby mirroring the reference current source. The current sources are connected to a first common node. A resistor is connected between the first common node and a second common node. One or more resistors are connected in series between the second common node and the transistor drain, and two or more switches are selectively operable to short circuit the resistors allowing the current sources to provide more than two current levels, thereby optimizing the image sensor current consumption for mobile devices.09-04-2008
20100270458LIQUID ELECTRICAL INTERCONNECT AND DEVICES USING SAME - Various embodiments include interconnects for semiconductor structures that can include a first conductive structure, a second conductive structure and a non-hardening liquid conductive material in contact with the first and second structure. Other embodiments include semiconductor components and imager devices using the interconnects. Further embodiments include methods of forming a semiconductor structure and focusing methods for an imager device.10-28-2010
20120217377OPTIMIZED LIGHT GUIDE ARRAY FOR AN IMAGE SENSOR - An image sensor has a plurality of pixels in a pixel array. Each pixel includes a photoelectric conversion unit below an insulating layer and a light guide to transmit light to the photoelectric conversion unit. Across five or more pixels arrayed in a direction, the light guides have a spacing between them that varies non-monotonically across the five or more pixels. A width of the light guide and/or a horizontal pitch between consecutive light guides may vary non-monotonically across same. A light guide of a pixel that detects light of shorter wavelengths only may be narrower than a light guide of another pixel that detects light of longer wavelengths. A color filter may be coupled to the light guide. A width of a gap between consecutive color filters may vary non-monotonically across same. A pitch between the gaps may vary non-monotonically across same.08-30-2012
20120074298PHOTOSENSOR AND PHOTOSENSOR ARRAY - A photosensor includes a lower electrode formed of a metal film, an amorphous silicon film disposed on the lower electrode, an n-type amorphous silicon film disposed on the amorphous silicon film, an upper electrode that is disposed on the n-type amorphous silicon film, and receives a first reference voltage, a capacitive element connected between the lower electrode and a second reference voltage, a switch circuit that inputs a first supply voltage to the lower electrode in an on-state, and puts the lower electrode into a floating state in an off-state, and a detector circuit that detects a voltage change in the lower electrode after irradiating the amorphous silicon film for a given period with light when the switch circuit is on.03-29-2012
20120074300IMAGE SENSOR WITH A GATED STORAGE NODE LINKED TO TRANSFER GATE - A CMOS imaging system with increased charge storage of pixels yet decreased physical size, kTC noise and active area. A storage node is connected to the transfer gate and provides a storage node for a pixel, allowing for kTC noise reduction prior to readout. The pixel may be operated with the shutter gate on during the integration period to increase the amount of time for charge storage by a pixel.03-29-2012
20120074297PHOTOSENSOR AND PHOTOSENSOR ARRAY - A photosensor array includes plural photosensor pixels. Each of the photosensor pixels includes a lower electrode, an amorphous silicon film, an n-type amorphous silicon film, and an upper electrode. The photosensor array includes plural scanning lines connected to the upper electrodes, plural read lines connected to the lower electrodes, a scanning circuit that is connected to the plural scanning lines, and sequentially supplies a selection scanning signal of a first voltage to the respective scanning lines, a first unit that inputs a second voltage higher than the first voltage to the plural read lines in a blanking period of one horizontal scanning period, and thereafter puts the plural read lines into the floating state, and a second unit that outputs a voltage change in each of the read lines within one horizontal scanning period as the sensor output voltage of the photosensor pixel.03-29-2012
20100282945TWO-DIMENSIONAL SOLID-STATE IMAGE CAPTURE DEVICE AND POLARIZATION-LIGHT DATA PROCESSING METHOD THEREFOR - A two-dimensional solid-state image capture device includes pixel areas arranged in a two-dimensional matrix, each pixel area being constituted by multiple sub-pixel regions, each sub-pixel region having a photoelectric conversion element. A polarization member is disposed at a light incident side of at least one of the sub-pixel regions constituting each pixel area. The polarization member has strip-shaped conductive light-shielding material layers and slit areas, provided between the strip-shaped conductive light-shielding material layers. Each sub-pixel region further has a wiring layer for controlling an operation of the photoelectric conversion element, and the polarization member and the wiring layer are made of the same material and are disposed on the same virtual plane.11-11-2010
20120312965SOLID-STATE IMAGE PICKUP DEVICE AND METHOD OF DRIVING THE SAME - A solid-state image pickup device which includes, on a semiconductor substrate, an image pickup area which includes plural columns of pixels, and plural column amplifier circuits each provided at each column of pixels or at every plural columns of pixels, wherein: each of the column amplifier circuits includes at least two amplifier circuit stages; a preceding amplifier circuit is a variable-gain amplifier circuit and the switchable gains include plural one or more gains; and a subsequent amplifier circuit is capable of amplifying, at one or more gains, the signal amplified at one or more gains in the preceding amplifier circuit.12-13-2012
201003011933D ACTIVE IMAGING DEVICE - The invention relates to a device comprising a photosensitive element producing an electric charge as a function of the radiation incident thereon and a charge integrator connected to the photosensitive element and converting the charge to a voltage. According to the invention, the device comprises a comparator capable of comparing the voltage delivered by the integrator with a threshold voltage, and a memory unit for storing the instant when the voltage delivered by the integrator exceeds the threshold voltage.12-02-2010
20120223215CMOS IMAGE SENSOR WITH WIDE DYNAMIC RANGE - The present invention relates a CMOS (Complementary Metal Oxide Semiconductor) image sensor capable of improving dynamic range by using an additional driver transistor. The CMOS image sensor according to the present invention has a pixel array which has a plurality of unit pixels each of which includes a photodiode and a fist transistor to act as a source follower buffer amplifier to amplify photogenerated charges accumulated in the photodiode. Also, the CMOS image sensor includes a second transistor for a buffer amplifier to amplify and output a gate input voltage in the unit pixel, wherein an output signal of the first transistor is applied to a gate of the second.09-06-2012
20120187279METHOD OF SENSING OF LOW-VOLTAGE IMAGE SENSOR - A sensing method of an image sensor. The image sensor includes: a light receiving device; a signal conversion unit including a transfer transistor having a plurality of transfer gates and for converting photocharges generated by the light receiving device into a voltage to output the voltage; and a sensing control unit for generating at least two reset signals and/or at least two transfer signals applied to the transfer gates of the transfer transistor during a one-time photosensing cycle. The image sensor is obtained by changing the structure and driving method of a transfer transistor of a typical 4-transistor CMOS image sensor and employs a deep depletion operation and a multiple reset operation, thereby reducing an image lag and increasing the well capacity of the light receiving device.07-26-2012
20120228474SOLID-STATE IMAGING DEVICE - While a drain power source of a reset transistor and a drain power source of an amplifying transistor are separated, the load of drain power source can be reduced by sharing a drain diffusion layer of the reset transistor and a drain diffusion layer of the amplifying transistor and a pixel amp transistor by adjacent cells in sharing pixel units. Further, it is possible to perform layout setting for the floating diffusions such that parasitic capacitances between the floating diffusions are equal to each other. It is possible to prevent step-like noise from occurring among the pixels while improving sensitivity.09-13-2012
20120228475Talbot Imaging Devices and Systems - Talbot imaging systems comprising a Talbot element, a phase gradient generating device, a light detector, and a processor. The Talbot element repeats a Talbot image at a distance from the Talbot element. The phase gradient generating device scans the Talbot image at a plane at the distance from the Talbot element by incrementally changing a phase gradient of a light field incident the Talbot element. As the Talbot image is scanned, the light detector captures time varying data associated with light altered by an object located at the distance from the Talbot element. The processor reconstructs an image of the object based on the time-varying light data.09-13-2012
20090020687Reference Pixel Array with Varying Sensitivities for TOF Sensor - The sensitivity of a reference pixel array RPA to the reference modulated light MLR is varied for different reference pixels RP of the reference pixel array RPA. In one embodiment the different sensitivities of the reference pixels RP in the RPA is achieved by designing the pixels to have different light sensitivities with respect to each other. In another embodiment, the different sensitivities are achieved by changing optical coupling between the separate reference pixels RP of the reference pixel array RPA to the reference modulated light MLR such as by changing how the different reference pixels RP couple to the aperture LGA of the light guide LG.01-22-2009
20120228476SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS - A solid-state imaging device according to the present invention includes a pixel cell having a photodiode, a charge detection unit, an amplification transistor, a transfer transistor which transfers a signal charge to the charge detection unit in accordance with a transfer control signal, and a reset transistor which resets the charge detection unit in accordance with a reset control signal; a signal processing circuit which receives a pixel reset potential of the charge detection unit, and a pixel signal potential corresponding to the signal charge transferred to the charge detection unit; a charge pump circuit which steps up or steps down a potential of at least one of the transfer control signal and the reset control signal in accordance with a driving clock signal; and a control logic circuit which causes the driving clock signal to be stopped during a pixel reading time period.09-13-2012
20120256077High dynamic range imager circuit and method for reading high dynamic range image - The present invention discloses a high dynamic range imager circuit and a method for reading high dynamic range image with an adaptive conversion gain. The high dynamic range image circuit includes a variable capacitor. The capacitance of the variable capacitor is adjusted according to sensed light intensity or by internal feedback control, to adaptively adjust the conversion gain of the high dynamic range image circuit as it reads a signal which relates to a pixel image sensed by an image sensor device. In each cycle, the signal can be read twice or more with different dynamic ranges, to enhance the accuracy of the signal.10-11-2012
20120256079CIRCUIT AND METHOD FOR AN ACTIVE IMAGE SENSOR - An array of active pixel sensors and an array of sampling circuits of an active image sensor are divided into sub-arrays in operation so that a sampling time and a readout time in a frame overlap to each other to shorten the total readout time of a frame. In an embodiment, a first sub-array of sampling circuits samples a first sub-array of active pixel sensors during a readout circuit reads out sampled signals from a second sub-array of sampling circuits, or the second sub-array of sampling circuits samples a second sub-array of active pixel sensors during the readout circuit reads out sampled signals from the first sub-array of sampling circuits.10-11-2012
20120261549PIXEL, PIXEL ARRAY, AND IMAGE SENSOR INCLUDING PIXEL ARRAY - Provided are a pixel, a pixel array, and an image sensor including the pixel array. The pixel includes a photoelectric converter, a capacitor, a variable capacitor, and a switching element. The capacitor accumulates electric charges converted by the photoelectric converter. The variable capacitor is connected to the capacitor, and has capacitance varied according to a potential of the capacitor. The switching element outputs the potential of the capacitor.10-18-2012
20120261550Optical Lens Assembly With Filter Member For Image Taking - An optical lens assembly with a filter member for image taking, sequentially arranged from an object side to an image side along an optical axis, comprises: a filter member and a lens assembly. The lens assembly is set at the object side of the filter member. The lens assembly comprises at least three lens elements with refractive powers, wherein at least two lens elements are made of plastic, and have at least one aspheric object-side surface or image-side surface. By such arrangements, the optical lens assembly with a filter member for image taking can have good chromatic aberration correction and reduce the total length for applications to electronic products such as cameras and mobile phones requiring high resolution.10-18-2012
20120261556IMAGE SENSOR IC AND CONTACT IMAGE SENSOR USING SAME - An image sensor IC includes: light receiving elements disposed linearly adjacent to each other on a surface of a quadrilateral semiconductor substrate having opposite parallel sides, and disposed oblique to at least one set of opposite sides from a predetermined position on one side thereof to be opposed in the semiconductor substrate to a predetermined position on the other side thereof; and interpolation elements provided at one end portion or both end portions of the one set of opposite sides on a side of a region in which an angle formed by the linearly disposed light receiving elements and the set of opposite sides is obtuse, the interpolation elements having an oblique angle to the linearly disposed light receiving elements and receiving light on an outer side of the linearly disposed light receiving elements.10-18-2012
20120261551OPTICAL COMPONENT ARRAY HAVING ADJUSTABLE CURVATURE - Provided are devices, and related methods, for controlling curvature of an array of optical components on, embedded, or partially embedded in, a deformable substrate. The array of optical components, in an aspect, comprises a deformable substrate having a contact surface and an array of mechanically interconnected optical components supported by the contact surface. An actuator is operably connected to the contact surface, wherein the actuator variably controls a curvature of said contact surface. The contact surface may have a curvature that spans concave to convex, which is tunable. In an aspect, the array of optical components is part of on optical device, such as a camera with a continuously adjustable zoom whose focus is maintained by adjusting a photodetector array curvature. In an aspect, the method is adjusting the curvature of a substrate that supports the array of optical components by applying a force to the substrate.10-18-2012
20120261554SEMICONDUCTOR IMAGE SENSOR MODULE, METHOD FOR MANUFACTURING THE SAME AS WELL AS CAMERA AND METHOD FOR MANUFACTURING THE SAME - A semiconductor image sensor module 10-18-2012
20120261555METHOD OF OPERATING RIPPLE COUNTER, IMAGE SENSOR HAVING RIPPLE COUNTER, METHOD OF OPERATING IMAGE SENSOR, AND ANALOG-TO-DIGITAL CONVERTER OF IMAGE SENSOR - An example embodiment of an image sensor may include a controller and a plurality of up/down ripple counters. The controller may generate a first control signal and a second control signal. Each of the up/down ripple counters may perform a stop operation or a count operation in response to a corresponding one of a plurality of operation control signals generated based on at least in part on the first control signal. The count operation may be an up-count operation or a down-count operation based on the second control signal. The image sensor may also include a plurality of memory chains. Each of the memory chains may receive a count value output from the up/down counters and may shift the received count value in response to a third control signal and a fourth control signal output from the controller.10-18-2012
20120261552SOLID-STATE IMAGING APPARATUS AND ITS DRIVING METHOD - A solid-state imaging apparatus has: output lines connected commonly to each column of a plurality of pixels; a reference signal generating circuit for generating a reference signal voltage changing in a ramp shape; a comparator for comparing the reference signal voltage with an analog voltage on the output line; and a counter unit for counting, as a digital value, a period from a start of the comparing of the comparator until an inversion of an output signal of the comparator, wherein the reference signal generating circuit sets the reference signal voltage into an offset voltage, thereafter, an input terminal of the comparator is reset, thereafter, the reference signal generating circuit resets the reference signal voltage from the offset voltage into a initial voltage, and thereafter, the reference signal generating circuit generates the ramp-shaped reference signal voltage from the initial voltage, so that the comparator starts the comparing.10-18-2012
20120228473SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE, AND IMAGING APPARATUS - There is provided a solid-state imaging device including a semiconductor substrate having an effective region in which a photodiode performing a photoelectric conversion is formed and, an optical black region shielded by a light shielding film; a first film which is formed on the effective region and in which at least one layer or more of layers having a negative fixed charge are laminated; and a second film which is formed on the light shielding region and in which at least one layer or more of layers having a negative fixed charge are laminated, in which the number of layers formed in the first film is different from the number of layers formed in the second film.09-13-2012
20090032683Flexible bioelectronic photodetector and imaging arrays based on bacteriorhodopsin (BR) thin films - The direct deposit of photoelectric materials onto low-cost prefabricated patterned flexible electrodes provided by the present invention introduces a new design approach that permits the development of innovative lightweight, durable and non-planar sensing systems. By extending single and multi-spectral bioelectronic sensing technology to flexible plastic substrates, the invention offers a number of potential advantages over structurally rigid silicon-based microelectronics (e.g. CMOS) including a reduction in spatial requirements, weight, electrical power consumption, heat loss, system complexity, and fabrication cost.02-05-2009
20090014627Photodetector device - The present invention relates to a photo-detecting apparatus capable of obtaining the intensity distribution of incident light at the same timing even when the intensity distribution of incident light may change with time. The photo-detecting apparatus comprises a photo-detecting section in which plural pixels are arranged in a two-dimensional array, and a signal processing section. Each of plural pixels constituting the photo-detecting section has a first photodiode and a second photodiode, N first photodiodes included in the group of pixels constituting the m-th row of the two-dimensional array being electrically connected to each other through multiple lines, while M second photodiodes included in the group of pixels constituting the n-th column of the two-dimensional array being electrically connected to each other through other multiple lines. The signal processing section includes M first readout circuits and N second readout circuits, and the signal processing section transfers an electric charge generated in the first photodiodes connected to the multiple lines into the first readout circuits to output voltage values in accordance with the charge quantity in the respective first readout circuits, while transferring an electric charge generated in the second photodiodes connected to the other multiple lines into the second readout circuits to output voltage values in accordance with the charge quantity in the respective second readout circuits.01-15-2009
20110121161COUNTER CIRCUITS, ANALOG TO DIGITAL CONVERTERS, IMAGE SENSORS AND DIGITAL IMAGING SYSTEMS INCLUDING THE SAME - A counter circuit for an analog to digital converter includes: a plurality of counter stages configured to obtain an integer multiple of a digital gain for the analog to digital converter by bypassing at least one of the plurality of counter stages. An analog-to-digital converter includes at least one counter circuit, and an image sensor includes the analog-to-digital converter, which includes the counter circuit.05-26-2011
20110121162SOLID-STATE IMAGING DEVICE AND DIFFERENTIAL CIRCUIT - A solid-state imaging device that is configurable into a small size appropriate for expanding dynamic range includes: a photodiode which is a photoelectric conversion unit that generates charge by incident light; a MOS transistor which is connected to the photodiode and transfers the charge; a floating diffusion region which is a first accumulation unit which accumulates the charge via the MOS transistor; a MOS transistor which is a second transfer unit connected to the floating diffusion region and connected in series to the MOS transistor; and a MOS transistor which is an output unit which outputs, via the MOS transistor, a signal voltage in accordance with an amount of the charge.05-26-2011
20080296475Vertical image sensors and methods of fabricating the same - A vertical CMOS image sensor includes a plurality of photodiodes formed vertically in a substrate to a first depth. The vertical CMOS image sensor further includes a plurality of signal processing devices formed to correspond to the plurality of photodiodes. The plurality of signal processing devices are formed to transmit signals generated from the plurality of photodiodes. Each of the signal processing devices is substantially formed on the same plane with a corresponding one of the plurality of photodiodes.12-04-2008
20100327149SOLID-STATE IMAGING APPARATUS - An apparatus includes a pixel region having disposed therein in a matrix form a plurality of conversion components, an amplifier transistor which amplifies a signal from the plurality of conversion components, a reset transistor which sets the potential of an input portion of the amplifier transistor to a reset potential, and a select transistor which is connected in series to the amplifier transistor and selects and reads the amplified signal, and well contact regions which are provided within the pixel region. Each of the well contact regions is neighboring to a drain region of the reset transistor, and the drain region of the reset transistor has a lower impurity concentration than the impurity concentration in the source and drain regions of the select transistor.12-30-2010
20120261553DETECTOR PIXEL SIGNAL READOUT CIRCUIT AND AN IMAGING METHOD THEREOF - A pixel readout circuit for use with an imaging pixel array, comprising: an input channel for receiving an image signal corresponding to electrical output of a photosensitive element of the pixel; and an electronic circuit interconnected between said input channel and an output readout utility. The electronic circuit comprises a capacitive unit, and a single analyzer. The capacitive unit is controllably linked to input channel for accumulating charge corresponding to received intensity generated by said pixel during a single frame period, and is connected to output readout utility. The signal analyzer unit is controllably linked to input channel and connected to output readout utility, and is configured for analyzing at least a part of said image signal by determining change in amount of accumulated charge corresponding to the received intensity, and upon detecting that the amount of charge satisfies a predetermined condition generating data indicative of a detected event.10-18-2012
20120267511Image sensor with hybrid heterostructure - An image sensor architecture provides an SNR in excess of 100 dB, without requiring the use of a mechanical shutter. The circuit components for an active pixel sensor array are separated and arranged vertically in at least two different layers in a hybrid chip structure. The top layer is preferably manufactured using a low-noise PMOS manufacturing process, and includes the photodiode and amplifier circuitry for each pixel. A bottom layer is preferably manufactured using a standard CMOS process, and includes the NMOS pixel circuit components and any digital circuitry required for signal processing. By forming the top layer in a PMOS process to optimized for forming low-noise pixels, the pixel performance can be greatly improved, compared to using CMOS. In addition, since the digital circuitry is now separated from the imaging circuitry, it can be formed using a standard CMOS process, which has been optimized for circuit speed and manufacturing cost. By combining the two layers into a stacked structure, the top layer (and any intermediate layer(s)) acts to optically shield the lower layer, thereby allowing charge to be stored and shielded without the need for a mechanical shutter.10-25-2012
20110036969Unit pixels including boosting capacitors, pixel arrays including the unit pixels and photodetecting devices including the pixel arrays - A unit pixel capable of achieving full initialization of a floating diffusion area, a pixel array including the unit pixel, and a photodetecting device including the pixel array. The unit pixel includes a photodetector, a transmission transistor for transmitting charges generated from the photodetector to a floating diffusion area, a reset transistor for initializing the floating diffusion area, and a boosting capacitor having a first terminal connected to the floating diffusion area and a second terminal to which a boosting voltage is applied.02-17-2011
20120298842PRODUCTION METHOD OF MICROLENS - A production method of a solid-state imaging device in which microlenses are arranged adjacent to each other on a substrate, includes: a first process of forming first microlenses on a surface of the substrate leaving space therebetween for providing second microlenses; and a second process of applying an overcoating material onto the surface of the substrate on which the first microlenses are formed, drying the overcoating material, exposing the overcoating material to light using a gray scale mask, and developing the exposed overcoating material, so as to form second microlenses in the space between the first microlenses adjacent to each other.11-29-2012
20120298841SOLID-STATE IMAGE PICKUP APPARATUS - Provided is a back-illuminated solid-state image pickup apparatus having an improved color separation characteristic. A photo detector includes a first photo detector unit and a second photo detector unit disposed deeper than the first photo detector unit with respect to a back surface of a semiconductor substrate, wherein the first photo detector unit includes a first-conductivity-type first semiconductor region where carriers generated through photo-electric conversion are collected as signal carriers. A readout portion includes a first-conductivity-type second semiconductor region extending in a depth direction such that the carriers collected in the first semiconductor region are read out to a front surface of the semiconductor substrate. A unit that reduces the amount of light incident on the second semiconductor region is provided.11-29-2012
20130020469SOLID-STATE IMAGE SENSING DEVICE - A solid-state image sensing device according to the invention which can reduce an instantaneous current occurring in transferring image digital signals from analog-digital converters to registers to reduce noise sneaking into the analog-digital converters and a pixel array includes a pixel array, a vertical scanning circuit, a plurality of column ADCs, a plurality of registers, and control signal generation units. The control signal generation units are provided for respective groups into which the column ADCs and the registers disposed on one side of the pixel array are divided, and generate control signals of different timings, for respective units including at least one group, of transfer of converted image digital signals to the registers from the column ADCs operating in parallel.01-24-2013
20130020467IMAGING SYSTEMS WITH COLUMN CURRENT MIRROR CIRCUITRY - Electronic devices may include image sensors having image pixel arrays with image pixels arranged in pixel rows and pixel columns. Each pixel column may be coupled to an active and an inactive current supply circuit. Each active current supply circuit may form a portion of a current mirror circuit that includes a common current source and a common input transistor. Each active current supply circuit may include a mirror transistor for mirroring current that flows through the common input transistor and a permanently enabled enabling transistor for activating that mirror transistor. Mirrored current that flows through a particular active mirror transistor may be supplied to image pixels in the pixel column associated with that particular mirror transistor. Each inactive current supply circuit may include a mirror transistor coupled to the input transistor and a permanently disabled enabling transistor.01-24-2013
20130020468SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD OF SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE - A solid-state imaging device has a sensor substrate having a pixel region on which photoelectric converters are arrayed; a driving circuit provided on a front face side that is opposite from a light receiving face as to the photoelectric converters on the sensor substrate; an insulation layer, provided on the light receiving face, and having a stepped construction wherein the film thickness of the pixel region is thinner than the film thickness in a periphery region provided on the outside of the pixel region; a wiring provided to the periphery region on the light receiving face side; and on-chip lenses provided to positions corresponding to the photoelectric converters on the insulation layer.01-24-2013
20130020471SOLID-STATE IMAGING DEVICE - Disclosed is a solid-state imaging device capable of calculating the difference in charge obtained by photoelectric conversion, and capable of a high level of integration. A solid-state imaging device is provided with an AD converter which is provided with: a first comparator which outputs a signal corresponding to a first analogue signal of a first pixel by comparing said first analogue signal with a reference voltage supplied from the reference voltage generation unit which generates a reference voltage which gradually changes; a second comparator which outputs a signal corresponding to a second analogue signal of a second pixel by comparing said second analogue signal with the reference voltage supplied by the reference voltage generation unit; a difference circuit which finds the difference between the signal corresponding to said first analogue signal and the signal corresponding to said second analogue signal and outputs a difference signal; and a counter circuit which counts the number of pulses in a pulse sequence corresponding to the aforementioned difference signal and converts said difference signal into a digital signal.01-24-2013
20130020470CAMERA SYSTEM WITH MULTIPLE PIXEL ARRAYS ON A CHIP - An integrated circuit for capturing panoramic image is disclosed. The integrated circuit comprises a plurality of pixel arrays fabricated on a common substrate, wherein each pixel array being positioned to capture an image to be projected thereon, and wherein the orientation of each pixel array is rotated to match with the orientation of the image projected thereon. The integrated circuit also includes readout circuits coupled to the pixel arrays for reading electrical signals corresponding to the images captured from the pixel arrays. In one embodiment, the plurality of pixel arrays corresponds to four pixel arrays and the orientation of said each pixel array is substantially 90° apart from a neighboring pixel array. The integrated circuit further comprises a timing and control circuit, wherein the timing and control circuit is for controlling said one or more readout circuits and the plurality of pixel arrays.01-24-2013
20120267512VIGNETTED PLANAR SPATIAL LIGHT-FIELD SENSOR AND SPATIAL SAMPLING DESIGNS FOR FAR-FIELD LENSLESS SYNTHETIC IMAGING VIA SIGNAL PROCESSING IMAGE FORMATION - Methods of implementing light field sensors for lensless synthetic imaging is provided. Relatively tall and short structures are fabricated, wherein the short structures comprise light sensing capabilities. The tall structures and short structures are arranged in an array to create an array of vignetted light sensors that partition an incoming light field into a plurality of vignetted light fields, each uniquely associated with a particular light sensor. Each light sensor generates a measurable electrical quantity responsive to the associated vignetted light field, and the collective measurable electrical quantities are responsive to incoming light field. The short structures can comprise photodiodes, LEDs, or OLEDs, and the resulting light field sensor can respond to color. Tall structures can comprise electronic components, LEDs, OLEDS, or OLETs. In an example implementation, tall structures in the array are light-emitting and act as a light-emitting visual display which further comprises an array of vignetted light sensors.10-25-2012
20120318962BACKSIDE ILLUMINATION SOLID-STATE IMAGE PICKUP DEVICE - According to one embodiment, an image pickup device includes a semiconductor substrate and first and second color filters. The semiconductor substrate includes a first principal surface and a second principal surface lying opposite the first principal surface. The first color filter has a first bottom surface lying on the second principal surface side and a first top surface lying opposite the first bottom surface. The second color filter has a second bottom surface lying on the second principal surface side and a second top surface lying opposite the second bottom surface. The first color filter includes a spectroscopic filter configured to allow light having passed through the semiconductor substrate to pass through. In a cross section perpendicular to the second principal surface, the first bottom surface is longer than the first top surface, and the second bottom surface is shorter than the second top surface.12-20-2012
20120318961IMAGE SENSOR MODULE - An image sensor module includes: a sensor IC having light receivers arranged in a main scanning direction; a lens unit configured to form an image on the sensor IC with light transferred from a read target; a first light source unit having a first output surface extending along the main scanning direction and outputting a first linear light extending along the main scanning direction from the first output surface toward the read target, the first output surface being placed at a position spaced apart from the lens unit in a sub-scanning direction; and a second light source unit having a second output surface extending along the main scanning direction and outputting a second linear light extending along the main scanning direction from the second output surface toward the read target, the second output surface being placed between the lens unit and the first output surface in the sub-scanning direction.12-20-2012
20120318960Image Sensor and Method for Packaging Same - An image sensor includes a ceramic base with a cavity therein, the ceramic base including a sidewall forming a conductive layer embedded therein. A protrusion extends from the sidewall toward the center of the cavity. An infrared filter is mounted on the upper surface of the protrusion with a most upper surface of the infrared filter not higher than the upper surface of the ceramic base; and an image unit is mounted on the lower surface of the protrusion with a most lower surface not lower than the lower surface of the ceramic base.12-20-2012
20120318959IMAGING DEVICE, DRIVING METHOD AND ELECTRONIC APPARATUS - Disclosed herein is an imaging device including: a plurality of pixels disposed to form a matrix having pixel rows, the pixels including a pixel electrode formed on a silicon substrate for one of the pixels by being separated away from another pixel electrodes formed for one of the other pixels, a photoelectric conversion film formed on the pixel electrode, and an opposite electrode formed on the photoelectric conversion film; and a driving section configured to apply an electric potential to the photoelectric conversion film on each of the pixel rows at least having read timings different from each other with a predetermined timing outside an exposure period of the pixels in a direction opposite to that of an electric potential applied to the photoelectric conversion film during the exposure period of the pixels.12-20-2012
20120318958CLOCK GENERATION CIRCUIT AND IMAGING DEVICE - A clock generation circuit includes first and second logic circuits and a switch circuit. The first logic circuit has a first circuit threshold value lower than a circuit threshold value of a front-stage circuit, receives an input clock output from the front-stage circuit, and outputs a first output signal in accordance with a logic state of the input clock and the first circuit threshold value. The second logic circuit has a second circuit threshold value higher than the circuit threshold value of the front-stage circuit, receives the input clock output from the front-stage circuit, and outputs a second output signal in accordance with the logic state of the input clock and the second circuit threshold value. The switch circuit receives the first and second output signals and outputs, as an output clock, one of first and second voltages corresponding to different logic states.12-20-2012
20110220777Detection module - We describe a detection module useful with an apparatus and/or system for conducting luminescence assays.09-15-2011
20110226935INFORMATION-ACQUISITION DEVICE AND OPTICAL COMMUNICATION SYSTEM - At least one cell implementing a sensor array embraces a photoelectric-conversion accumulation element configured to generate and accumulate signal charges, a potential detection circuit configured to detect the signal charges generated by the photoelectric-conversion accumulation element as a potential change, and an amplification circuit configured to amplify the potential change and to transmit to an output-signal line. The photoelectric-conversion accumulation element and the potential detection circuit are connected in series between a first potential terminal and a second potential terminal, and the potential detection circuit has an insulated-gate transistor, which detects the potential change in a weak inversion state, in a period when an optical-communication signal is received.09-22-2011
20110226934IMAGE SENSORS EMPLOYING SENSITIZED SEMICONDUCTOR DIODES - In various example embodiments, the inventive subject matter is an image sensor and methods of formation of image sensors. In an embodiment, the image sensor comprises a semiconductor substrate and a plurality of pixel regions. Each of the pixel regions includes an optically sensitive material over the substrate with the optically sensitive material positioned to receive light. A pixel circuit for each pixel region is also included in the sensor. Each pixel circuit comprises a charge store formed on the semiconductor substrate and a read out circuit. A non-metallic contact region is between the charge store and the optically sensitive material of the respective pixel region, the charge store being in electrical communication with the optically sensitive material of the respective pixel region through the non-metallic contact region.09-22-2011
20100252716Image sensor - An apparatus includes a three dimensional array of light receptors disposed within a substrate having a light receiving surface, where light receptors disposed closer to the light receiving surface are responsive to light having shorter wavelengths than light receptors disposed further from the light receiving surface, and where each light receptor is configured to output a binary value and to change state between an off-state and an on-state by the absorption of at least one photon.10-07-2010
20120273656IMAGING APPARATUS - An image sensor is positioned at a fixing member and adheres to and is fixed to the fixing member by pouring an adhesive into the opening. The opening is formed in a shape that extends in a short-side direction of the image sensor at a position corresponding to a substantially central portion of the image sensor in a long-side direction. The opening is formed such that an opening width on a side not facing the image sensor is larger than an opening width on a side facing the image sensor.11-01-2012
20110248148SOLID-STATE IMAGING DEVICE AND DRIVING METHOD THEREFOR - A solid-state imaging device in which the potential of a signal line, which is obtained before a pixel has an operating period, is fixed to an intermediate potential between a first power-supply potential and a second power-supply potential.10-13-2011
20100230580SCANNING IMAGING DEVICE - A scanning imaging device has a spot light projecting section 101 that irradiates a first spot light for excitation and two second spot lights for focus detection onto a flow channel of a substrate 4 and an imaging section 102 for picking up an image of light emitted from a target of detection in the flow channel as it is excited by the first spot light. One of the second spot lights is reflected at the top surface of the flow channel and the other of the second spot lights is reflected at the bottom surface of the flow channel and a focus position adjustment mechanism for adjusting the focus position of each of the first and second spot lights in the depth direction of the flow channel such that the quantity of deviation of the focus positions of the first and second spot lights in the depth direction of the flow channel as determined by comparing the intensities of the one and the other of the second reflected lights reflected at the flow channel.09-16-2010
20100230579SOLID-STATE IMAGING DEVICE, METHOD FOR DRIVING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS - A solid-state imaging device having unit pixels arranged therein is provided, each unit pixel including: a transfer transistor configured to transfer a charge from a photoelectric conversion part to a floating diffusion part; a first reset transistor configured to reset the floating diffusion part; a charge storage capacitor; a charging transistor configured to charge the charge storage capacitor by a current corresponding to a charge in the floating diffusion part; a second reset transistor configured to reset the charge storage capacitor; an amplifying transistor configured to output an electric signal corresponding to a charge in the charge storage capacitor; and a selection transistor configured to selectively cause the amplifying transistor to be in an operation state.09-16-2010
20100230577OPTICAL ANGLE OF ARRIVAL MEASUREMENT SYSTEM AND METHOD - An optical angle of arrival measurement system uses an optical element to form at least one narrow width line on a focal plane array (FPA) which is oblique with respect to the FPA's row and column axes and which traverses at least two rows or columns along its length; forming two perpendicular narrow width lines in a cross-pattern is preferred. Interpolating the position of the lines on the FPA provides coordinates that can be used to calculate the optical angle of arrival in accordance with θx=A(x)·tan09-16-2010
20120326009PLASMONIC LIGHT SENSORS - An electronic device may be provided a plasmonic light sensor. Plasmonic light sensors may include arrays of plasmonic image pixels that detect evanescent electron density waves, or plasmons, generated in the plasmonic image pixel through an interaction with incoming light. Plasmonic image pixels may include microlenses that focus the light onto conducting wires in the plasmonic image pixel. Plasmons generated on the surface of the conducting wire may propagate along the conducting wire. Detector circuitry may be coupled to the wire on which the plasmons propagate to detect the light through detection of the evanescent electron density wave. Detector circuitry may include a biasing component for biasing a photodiode such that a small amount of light results in an avalanche of charge, or a sudden increase in current, produced in the detector circuitry in response to the evanescent wave.12-27-2012
20120280112HIGH DYNAMIC RANGE PIXEL - A high dynamic range pixel (11-08-2012
20110278435IMAGE SENSOR APPARATUS - An image sensor comprises a photoelectric-conversion-film current detector which detects a photoelectric conversion film current produced by combination of holes generated in a photoelectric conversion film with electrons supplied from an electron supplying source array to the photoelectric conversion film; a plurality of integrators which sequentially perform temporal integration on the photoelectric conversion film current during respective corresponding pixel periods during which electrons are supplied to said pixel areas, so as to generate integral signals; and sampling means which samples the integral signals of the plurality of integrators in each of the pixel periods to generate an image signal.11-17-2011
20120280111Scanning Multispectral Telescope Comprising Wavefront Analysis Means - A scanning multispectral telescope comprises an optical architecture arranged so as to focus the image of an object in the vicinity of a photodetection assembly, the area of focus being an image plane. The photodetection assembly comprises a number of parallel rows of photodetectors, each row being dedicated to a particular spectral band, each spectral band being centred on a mean wavelength. The telescope comprises means for acquiring and analyzing the images obtained from the rows of photodetectors using a phase diversity algorithm. Finally, the telescope comprises optical or mechanical means arranged in such a way that at least one of the rows of photodetectors is offset by a fraction of the mean wavelength which corresponds to it on an axis perpendicular to the image plane.11-08-2012
20120280110Compact Digital Pixel for a Focal Plane Array - According to one embodiment of the present disclosure, a focal plane array is provided. The focal plane array may comprise a plurality of pixels. Each pixel may include one or more capacitors operable to collect charge corresponding to an amount of light received at the respective pixel. Each pixel may further include a present state register operable to store a present state value of the respective pixel. The present state value indicates an amount of charge collected by the one or more capacitors of the respective pixel. The focal plane array may further include a logic circuit coupled to each present state register of the plurality of pixels. The logic circuit is operable to compute a next state value of each pixel based on the present state value of the respective pixel. The logic circuit may be time shared by the pixels.11-08-2012
20120280108SYSTEMS AND METHODS FOR ADDING OR SUBTRACTING PIXELS - A pixel array including circuitry for combining charges accumulated by individual pixels in the array enables addition and/or subtraction of individual pixel values, prior to their digitization, in the pixel array.11-08-2012
20120326011IMAGE PICKUP DEVICE, ELECTRONIC APPARATUS, MANUFACTURING METHOD, AND INSPECTION APPARATUS - An image pickup device includes a plurality of photodiodes, a photoelectric conversion part, and structures. The photoelectric conversion part is configured to convert light incident on the plurality of photodiodes into an electric signal. The structures each have a plano-convex shape and are formed to cover the plurality of photodiodes, the structures each having a concave part at a center of the plano-convex shape, and regions other than the concave part on each surface of the structures, the regions being covered by a light reflecting material.12-27-2012
20120091317IMAGING SYSTEMS AND METHODS INCLUDING PIXEL ARRAYS WITH REDUCED NUMBERS OF METAL LINES AND CONTROL SIGNALS - This is generally directed to systems and methods for reduced metal lines and control signals in an imaging system. For example, in some embodiments a pixel cell of an imaging system can operate without a row select transistor, and therefore can operate without a row select metal control line. As another example, in some embodiments a pixel cell can share its reset transistor control line with a transfer transistor control line of another pixel cell. In this manner, an imaging system can be created that averages a single metal line per pixel cell. In some embodiments, operation of such reduced-metal line imaging systems can use modified timing schemes of control signals.04-19-2012
20120286138SOLID-STATE IMAGING DEVICE, DRIVING METHOD THEREOF, AND SOLID-STATE IMAGING SYSTEM - A solid-state imaging device is configured such that an effective pixel and a reference pixel are connected to first and second signal lines, respectively. The solid-state imaging device includes a difference signal output unit configured to perform difference processing on a signal output from a first amplifying transistor included in the effective pixel and a signal output from a second amplifying transistor included in the reference pixel. The difference signal output unit is provided separately from the first and second amplifying transistors.11-15-2012
20120286137SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS - A solid-state imaging device which includes, a photoelectric conversion film provided on a second surface side which is the opposite side to a first surface on which a wiring layer of a semiconductor substrate is formed, performs photoelectric conversion with respect to light in a predetermined wavelength region, and transmits light in other wavelength regions; and a photoelectric conversion layer which is provided in the semiconductor substrate, and performs the photoelectric conversion with respect to light in other wavelength regions which has transmitted the photoelectric conversion film, in which input light is incident from the second surface side with respect to the photoelectric conversion film and the photoelectric conversion layer.11-15-2012
20120326010SOLID-STATE IMAGING DEVICE, METHOD OF DRIVING THE SAME, AND ELECTRONIC SYSTEM - A solid-state imaging device includes: a pixel array section including an array of pixels in a two-dimensional matrix, the pixels including a photoelectric conversion section configured to generate signal charges in accordance with an amount of light, a discharge section configured to receive an overflow of signal charges exceeding a saturation amount of charges during an exposure period, at least a first charge accumulation section configured to receive the signal charges generated by the photoelectric conversion section after the exposure period, and a second charge accumulation section configured to receive the signal charges exceeding the saturation amount of charges, and a plurality of pixel transistors reading the signal charges; and a scanning section configured to scan the pixels so that accumulation periods for all the pixels are simultaneous in an accumulation period of the signal charges, and to selectively scan the pixels in sequence.12-27-2012
20120326008PHOTODETECTING IMAGER DEVICES HAVING CORRELATED DOUBLE SAMPLING AND ASSOCIATED METHODS - Transistor pixel devices, imagers, and associated methods are provided. In one aspect, a transistor pixel device includes a photodiode coupled to a floating diffusion region (FD), a storage node (SN), and a power supply, wherein the FD is coupled between the photodiode and the power supply. The device also includes a first global transfer transistor coupled between the photodiode and the FD for gating between the photodiode and the FD and a second global transfer transistor coupled between the FD and the SN for gating between the FD and the SN. A global reset select transistor is coupled between the FD and the power supply, wherein an open state of the global reset select transistor prevents accumulation of electrical charge at the photodiodes. A source follower transistor is coupled to the FD and to the power supply, where the source follower is operable to receive electrical signal from the FD.12-27-2012
20120286140SOLID-STATE IMAGE PICKUP DEVICE - Dark current from a transfer transistor is suppressed and power-supply voltage in a second semiconductor substrate is lowered. A solid-state image pickup device includes a pixel array, a plurality of common output lines receiving signals read out from a plurality of pixels, a transfer scanning unit sequentially driving the plurality of transfer transistors, a signal processing unit processing the signals output to the common signal lines, and a level shift unit making amplitude of a pulse supplied to a gate of the transfer transistor larger than amplitude of a pulse supplied to a gate of a transistor constituting the signal processing unit. The pixel array and the level shift unit are arranged on a first semiconductor substrate, whereas the plurality of common output lines and the signal processing unit are arranged on a second semiconductor substrate.11-15-2012
20120286141PIXEL WITH REDUCED 1/F NOISE - A pixel is provided, comprising at least one transistor, the pixel being arranged for cycling the at least one transistor between two or more bias states, e.g. inversion and accumulation, during a readout phase. Due to the cycling between the at least two bias states, the correlation over time of the 1/f noise of the readout signals is broken, thus taking multiple samples and applying an operator onto the samples can reduce the effect of the 1/f noise to arbitrary low levels.11-15-2012
20120286139SOLID-STATE IMAGING DEVICE, METHOD FOR DRIVING SOLID-STATE IMAGING DEVICE, AND SOLID-STATE IMAGING SYSTEM - A solid-state imaging device has a configuration for selecting from a plurality of reference pixels at least one reference pixel for outputting a reference signal.11-15-2012
20120138775DATA SAMPLER, DATA SAMPLING METHOD, AND PHOTO DETECTING APPARATUS INCLUDING DATA SAMPLER - A data sampler and a photo detecting apparatus compensate a reference signal with offset information measured from a unit pixel, and compare an offset-compensated reference signal with a data signal, thereby minimizing the impact of an offset occurring with an increase of gain in the data sampler.06-07-2012
20120138772IMAGE PICKUP DEVICE - An image pickup device may include an image pickup unit in which a plurality of pixels are arranged, the plurality of pixels outputting a first and second pixel signals, and an analog-to-digital (AD) conversion circuit that outputs a digital difference signal. The AD conversion circuit may include a delay circuit that has a plurality of delay devices, the delay circuit outputting a first and second lower phase signals, a latch unit that latches the first and second lower phase signals, a lower counting unit that generates a first and second lower count signals, the lower counting unit generating and outputting a lower difference signal, and a higher counting unit that generates a higher difference signal, subtracts a predetermined number from the higher difference signal, or adds the predetermined number to the higher difference signal, and outputs the higher difference signal after subtraction or addition processing.06-07-2012
20130009038IMAGING DEVICE AND IMAGING APPARATUS - Disclosed herein is an imaging device including at least one special pixel with a configuration having a layout made different from the layout of the configuration of each pixel other than the special pixel. The special pixel is a pixel having an imaging characteristic steadily different from that of the other pixels. A difference in layout between the configuration of the special pixel and the configuration of the other pixels is used to suppress a non-uniformity of the imaging characteristic exhibited by the special pixel.01-10-2013
20130009042IMAGING DEVICE - The present invention relates to improved imaging devices having high dynamic range and to monitoring and automatic control systems incorporating the improved imaging devices.01-10-2013
20130009043IMAGE SENSOR HAVING SUPPLEMENTAL CAPACITIVE COUPLING NODE - An image sensor includes a pixel array, a bit line, a supplemental capacitance node line, and a control circuit. The pixel array includes a plurality of pixel cells each including a floating diffusion (“FD”) node and a photosensitive element coupled to selectively transfer image charge to the FD node. The bit line is coupled to selectively conduct image data output from a first group of the pixel cells. The supplemental capacitance node line is coupled to the FD node of a second group of the pixel cells different from the first group. The control circuit is coupled to the supplemental capacitance node line to selectively increase the potential at the FD node of each of the pixel cells of the second group by selectively asserting a FD boost signal on the supplemental capacitance node line.01-10-2013
20130009041PINNED PHOTODIODE CMOS IMAGE SENSOR WITH A LOW SUPPLY VOLTAGE - A device for controlling an image sensor including at least one photosensitive cell including a photodiode capable of discharging into a sense node via a first MOS transistor, the sense node being connected to the gate of a second MOS transistor having its source connected to a processing system. The device includes a bias circuit capable of increasing the voltage of the source during the discharge of the photodiode into the sense node.01-10-2013
20130009044SOLID STATE IMAGE PICKUP DEVICE AND MANUFACTURING METHOD OF SOLID STATE IMAGE PICKUP DEVICE, AND IMAGE PICKUP APPARATUS - A solid-state image pickup device includes a plurality of photoelectric conversion units, a plurality of signal read-out circuits, and a test terminal for testing the photoelectric conversion units. Each of the photoelectric conversion units includes a pixel electrode film, an opposing electrode film opposing the pixel electrode film and a light receiving layer disposed between the pixel electrode film and the opposing electrode film. The photoelectric conversion units are arranged in a two-dimensional array above a semiconductor substrate. Each of the signal read-out circuits are configured to read out a signal corresponding to an amount of electrical charges generated in the light receiving layer and transferred to the pixel electrode film. The test terminal is disposed outside of an area where the photoelectric conversion units are disposed, disposed on the same plane as the pixel electrode film, and made of the same material as the pixel electrode film.01-10-2013
20130009039SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE - Disclosed herein is a solid-state imaging device including: a photoelectric conversion section configured to have a charge accumulating region of a first conductivity type formed in a semiconductor layer; a pixel having the photoelectric conversion section and a pixel transistor; a pixel region in which a plurality of the pixels are arranged; an epitaxially grown semiconductor layer of the first conductivity type formed on an inner wall part of a trench disposed in the semiconductor layer at least between adjacent ones of the pixels within the pixel region; and a pixel separating section configured to separate the charge accumulating regions of the adjacent ones of the pixels from each other, the pixel separating section being formed on the inside of the semiconductor layer of the first conductivity type.01-10-2013
20130009040ACTIVE PIXEL SENSOR WITH NANOWIRE STRUCTURED PHOTODETECTORS - “An imaging device formed as an active pixel array combining a CMOS fabrication process and a nanowire fabrication process. The pixels in the array may include a single or multiple photogates surrounding the nanowire. The photogates control the potential profile in the nanowire, allowing accumulation of photo-generated charges in the nanowire and transfer of the charges for signal readout. Each pixel may include a readout circuit which may include a reset transistor, charge transfer switch transistor, source follower amplifier, and pixel select transistor. A nanowire is generally structured as a vertical rod on the bulk semiconductor substrate to receive light energy impinging onto the tip of the nanowire. The nanowire may be configured to function as either a photodetector or a waveguide configured to guild the light to the substrate. Light of different wavelengths can be detected using the imaging device.”01-10-2013
20130009037CONTACT IMAGE SENSOR UNIT AND IMAGE READING APPARATUS USING THE SAME - A contact image sensor unit includes: a light source (01-10-2013
20130015322APPARATUS AND METHOD FOR REDUCING COMMON-MODE ERRORAANM KUSUDA; YoshinoriAACI San JoseAAST CAAACO USAAGP KUSUDA; Yoshinori San Jose CA USAANM CARREAU; Gary RobertAACI PlaistowAAST NHAACO USAAGP CARREAU; Gary Robert Plaistow NH USAANM COLN; Michael C.AACI LexingtonAAST MAAACO USAAGP COLN; Michael C. Lexington MA US - Apparatus and methods reduce common-mode error. An integrated circuit includes a plurality of signal channels, a first proxy channel, and a subtraction block. The signal channels are configured to receive a plurality of input signals and to generate a plurality of output signals, and each of the signal channels has a substantially similar circuit topology. The first proxy channel has a substantially similar circuit topology as the plurality of signal channels, and includes an output that can vary in relation to a common-mode error of the signal channels. The subtraction block is configured to generate a plurality of modified output signals by using the output of the first proxy channel to reduce the common-mode error of the plurality of output signal channels.01-17-2013
20130015327RADIATION IMAGE CAPTURING APPARATUSAANM AMITANI; KoujiAACI TokyoAACO JPAAGP AMITANI; Kouji Tokyo JP - A control device of a radiation image capturing apparatus performs repeated reading of leak data prior to radiation image capturing operation and, when a threshold value has been exceeded by the leak data having been read out, said control device detects the start of irradiation. If there are periodic fluctuations in the leak data read out prior to radiation image capturing operation even though irradiation has not started, said control device determines whether or not a threshold value has been exceeded by a value obtained by subtracting a previously obtained fluctuation pattern of the leak data from the read-out leak data during a time period including at least a time period when the leak data fluctuates.01-17-2013
20130015323IMAGE SENSOR WITH A CHARGE-BASED READOUT CIRCUIT - Embodiments of the present invention employ a charged-based readout circuit in an image sensing system that includes a column readout circuit which may perform sampling on signals received from a pixel array and transfer a corresponding correlated double sample (CDS) signal, a differential channel readout circuit that may receive the corresponding CDS signal and amplify the signal using an output amplifier, and an output buffer which may receive the amplified CDS signal and output a corresponding signal out of the system. The output amplifier may be composed of two output amplifier paths so that ping-ponging is possible.01-17-2013
20130015324CMOS IMAGE SENSORAANM Park; Young HwanAACI Namyangju-siAACO KRAAGP Park; Young Hwan Namyangju-si KRAANM Ahn; Jung ChakAACI Yongin-siAACO KRAAGP Ahn; Jung Chak Yongin-si KRAANM Lee; Sang JooAACI Seongnam-siAACO KRAAGP Lee; Sang Joo Seongnam-si KRAANM Park; Jong EunAACI Seongnam-siAACO KRAAGP Park; Jong Eun Seongnam-si KRAANM Jang; Young HeubAACI Suwon-siAACO KRAAGP Jang; Young Heub Suwon-si KR - In one embodiment, the image sensor includes a first photodiode configured to convert an optical signal into a photocharge, a sensing node configured to store the photocharge of the first photodiode, and a circuit configured to selectively output an electrical signal corresponding to the photocharge at the sensing node on an output line. The circuit is connected to at least a first conductive contact, and the output line is disposed between the sensing node and the first conductive contact.01-17-2013
20130015329COLUMN A/D CONVERTER, COLUMN A/D CONVERSION METHOD, SOLID-STATE IMAGING ELEMENT AND CAMERA SYSTEMAANM Iwaki; HiroyukiAACI KanagawaAACO JPAAGP Iwaki; Hiroyuki Kanagawa JP - A solid-state imaging device having an analog-digital converter, and an analog-digital conversion method are described herein. An example of a solid-state imaging device includes a column processing section that includes a low-level bit latching section. The low-level bit latching section receives a comparator output from a comparator and a count output from a counter, and the low-level bit latching section latches a count value.01-17-2013
20130015325BACKSIDE ILLUMINATED IMAGE SENSORAANM AHN; Jung-chakAACI Yongin-siAACO KRAAGP AHN; Jung-chak Yongin-si KR - A backside illuminated image sensor includes a semiconductor substrate having a front side and a backside facing each other, a light receiving element in the semiconductor substrate, the light receiving element being configured to convert light incident on the backside of the semiconductor substrate to an electrical signal, a first semiconductor layer on the front side of the semiconductor substrate, and a second semiconductor layer on the backside of the semiconductor substrate, the second semiconductor layer being connected to a voltage source.01-17-2013
20130015328SOLID-STATE IMAGE PICKUP DEVICE AND IMAGE PICKUP APPARATUSAANM Goto; TakashiAACI KanagawaAACO JPAAGP Goto; Takashi Kanagawa JP - A solid-state image pickup device includes a plurality of effective pixels each including a photoelectric conversion element and an OB pixel that is provided outside of an area where the effective pixels are formed and obtains the same output with a dark output of the effective pixel. Each of the effective pixels includes a first signal read-out circuit formed on a semiconductor substrate. The OB pixel includes a second signal read-out circuit formed on the semiconductor substrate and a capacitor connected to an input node of the second signal read-out circuit. The second signal read-out circuit has the same configuration as the first signal read-out circuit. A capacitance value of the capacitor is a value that renders the capacitance value at the input node of the first signal read-out circuit and the capacitance value at the input node of the second signal read-out circuit to be substantially equal to each other.01-17-2013
20130015326SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAMEAANM TAMURA; HikaruAACI ZamaAACO JPAAGP TAMURA; Hikaru Zama JP - The semiconductor device includes a plurality of pixels arranged in rows and columns, and first transistors fewer than the number of the plurality of pixels. The plurality of pixels each includes a photodiode and an amplifier circuit. The amplifier circuit holds the accumulated charge and includes at least a second transistor electrically connected to a cathode of the photodiode. The cathode of the photodiode in the pixel in an n-th row and the cathode of the photodiode in the pixel in an (n+1)-th row are electrically connected to the first transistor. The number n is a natural number. The pixel in the n-th row and the pixel in the (n+1)-th row are in an identical column.01-17-2013
20130020465PIXEL, PIXEL ARRAY, IMAGE SENSOR INCLUDING THE SAME, AND METHOD FOR DRIVING IMAGE SENSOR - Disclosed are a pixel, a pixel array, an image sensor including the same, and a method for driving the image sensor. The method for driving the image sensor includes starting an integration procedure of charges in a photoelectric conversion part, transferring the charges, which are integrated in the photoelectric conversion part for a first integration duration, into a charge storage part, reading a signal level of the first integration duration, transferring charges, which are integrated in the photoelectric conversion part for a second integration duration after the first integration duration, into the charge storage part, reading a signal level of the second integration duration, and calculating a light intensity by using the signal level of the first integration duration and the signal level of the second integration duration. A WDR image sensor is provided to detect all light intensities regardless of the degree of illuminance.01-24-2013
20130020466Conversion Gain Modulation Using Charge Sharing Pixel - An image sensor including an array of pixel elements is operated according to two operation modes to modulate the conversion gain of the pixel to operate the image sensor based on the impinging light conditions. More specifically, an image sensor pixel element is operated in a high conversion gain mode for low light conditions and in a low conversion gain mode for bright light conditions. The low conversion gain mode implements charge sharing between the floating diffusion and the photodiode. The low conversion gain mode further implements partial reset where the photodiode and the floating diffusion are reset to the same potential and to a potential slightly less than the pinning voltage of the photodiode.01-24-2013
20120241597Hot Spot Correction in a Compressive Imaging System - A compressive imaging system for optimizing dynamic range during the acquisition of compressed images. A light modulator modulates incident light with spatial patterns to produced modulated light. A light sensing device generates an electrical signal representing intensity of the modulated light over time. The system amplifies a difference between the electrical signal and an adjustable baseline voltage and captures samples of the amplified signal. The adjustable baseline voltage is set to be approximately equal to the average value of the electrical signal. A compressive imaging system for identifying and correcting hot spot(s) in the incident light field. Search patterns are sent to the light modulator and the corresponding samples of the electrical signal are analyzed. Once the hot spot is located, the light modulating elements corresponding to the hot spot may be turned off or their duty cycle may be reduced.09-27-2012
20120241596System for and Method of Performing Multi-Technique Imaging - A system for and method of performing multi-technique imaging are disclosed. Such multi-technique imaging system includes a surface for supporting a specimen and at least two illumination sources for producing light radiation. The system also includes a plurality of reflective and refractive devices arranged to direct at least part of the light radiation from each of the at least two illumination sources to the surface such that the at least part of the light radiation from each of the at least two illumination sources illuminates substantially the same area on the surface. The system also includes a sensor configured to receive light radiation from the at least two illumination sources reflected by the specimen and/or that pass by the specimen. The system also includes a power source configured to power the at least two illumination sources and the sensor.09-27-2012
20120241592Sensing pixel structure for generating sensed image with uniform resolution and light sensor - A sensing pixel structure for generating a sensed image with uniform resolution is applied in a light sensor. The sensing pixel structure includes a plurality of first sensing pixels and a plurality of second sensing pixels. The location of the plurality of first sensing pixels corresponds to a center region of a lens. Each of the plurality of first sensing pixels has a first pixel area. The location of the plurality of second sensing pixels corresponds to the peripheral region of the lens. Each of the plurality of second sensing pixels has a second pixel area. The first pixel area is larger than the second pixel area, so that number of the sensing pixels corresponding to the peripheral region of the lens is larger than that corresponding to the center region of the lens. Therefore, the light sensor generates the sensed image with uniform resolution.09-27-2012
20080251694Image pickup apparatus - An image pickup apparatus capable of capturing a composite image of a visible-light image and an infrared image of a subject is provided, whereby the configuration is simplified and made more convenient. A visible-light source (10-16-2008
20080245953MULTI-AXIS INTEGRATION SYSTEM AND METHOD - An image acquisition system and method employing multi-axis integration (MAI) may incorporate both optical axis integration (OAI) and time-delay integration (TDI) techniques. Disclosed MAI systems and methods may integrate image data in the z direction as the data are acquired, projecting the image data prior to deconvolution. Lateral translation of the image plane during the scan in the z direction may allow large areas to be imaged in a single scan sequence.10-09-2008
20080237450STRUCTURE FOR A CMOS IMAGING SENSOR - A design structure for a CMOS image sensor and active pixel cell design that provides an output signal representing an incident illumination light level that is adapted for time domain analysis. Thus, the noise sources associated with charge integration and the contribution of dark current to it, is avoided. The active pixel cell design implements only three FETs: a transfer device, a reset device and an output transistor device having one diffusion connected to a Row Select signal. In this mode of operation, use is made of the voltage decay at the photo diode to generate a pixel output at one diffusion of the output transistor device, which is a pulse with fixed amplitude independent of the incident illumination level. For use of an NFET output transistor device, the pulse width is an inverse function of the incident illumination level. For a PFET output transistor device, the output pulse has a time delay, from a reference signal, by an amount that is an inverse function of the incident illumination level.10-02-2008
20080237448METHOD AND CIRCUIT FOR OBTAINING A SAMPLE IN AN IMAGE SENSOR - An image sensor and a method for acquiring images by sampling of the level of a voltage representative of the charge of a photodiode, in which a first sample is taken during a reset of the charge level of the photodiode; and a second sample is taken provided that the decrease slope of the voltage after the reset is lower than a threshold, said second sample replacing the first one.10-02-2008
20090236498VARIABLE TRANSFER GATE OXIDE THICKNESS FOR IMAGE SENSOR - A light sensor cell includes a photosensitive element, a floating diffusion region, and a gate oxide disposed between the photosensitive element and the floating diffusion region. The gate oxide has a non-uniform thickness, with a greater thickness near the photosensitive element and a lesser thickness near the floating diffusion region. A transfer gate is disposed on the gate oxide. The transfer gate has a non-uniform threshold voltage, with a greater threshold voltage near the photosensitive element and a lesser threshold voltage near the floating diffusion region.09-24-2009
20130140434SOLID-STATE IMAGING DEVICE - A solid-state imaging device is capable of suppressing as much as possible an increase in power consumption of a low-frequency noise removing process. A pixel unit includes pixels outputting pixel signals corresponding to an amount of incident light and correction pixels outputting correction pixel signals corresponding to a correction reference voltage. An AD conversion circuit includes a delay circuit, to which a plurality of delay elements are connected, and outputs a digital signal corresponding to the number of delay elements through which a pulse signal passes when the pulse signal passes through the number of delay elements corresponding to a level of the pixel signal or the correction pixel signal.06-06-2013
20130140435SOLID-STATE IMAGING APPARATUS - There is provided a solid-state imaging apparatus that can prevent degradation of image quality. The solid-state imaging apparatus includes a plurality of pixels (06-06-2013
20130140436Color Filter Array, Imaging Device, and Image Processing Unit - A color filter array includes a plurality of filters, each having one of a plurality of types of spectral sensitivity and being disposed at the location of a corresponding one of a plurality of pixels. The filters of a predetermined type selected from among the plurality of types are arranged at the locations of the pixels in a checkered pattern, and the filters of some or all of the other types are randomly arranged at the pixel locations at which the filters of the predetermined type are not present.06-06-2013
20130140437Method and Apparatus for Examining a Sample - A method and an apparatus for examining a sample. The apparatus has a light source for generating excitation light in pulses which occur in succession at an excitation pulse frequency, for illuminating a sample region with the excitation pulse, and having a detector for detecting the detection light emanating from the sample region. The apparatus is characterized in that, for each detected photon of the detection light, the detector generates an electrical pulse and thereby a sequence of electrical pulses, and an analog-digital converter is provided that generates a digital data sequence by sampling the sequence of electrical pulses at a sampling rate.06-06-2013
20130140438SOLID STATE IMAGE PICKUP DEVICE AND CAMERA - A solid state image pickup device which can prevent color mixture by using a layout of a capacitor region provided separately from a floating diffusion region and a camera using such a device are provided. A photodiode region is a rectangular region including a photodiode. A capacitor region includes a carrier holding unit and is arranged on one side of the rectangle of the photodiode region as a region having a side longer than the one side. In a MOS unit region, an output unit region including an output unit having a side longer than the other side which crosses the one side of the rectangle of the photodiode region is arranged on the other side. A gate region and the FD region are arranged between the photodiode region and the capacitor region.06-06-2013
20130140432BACKSIDE-ILLUMINATED (BSI) PIXEL INCLUDING LIGHT GUIDE - Implementations of a pixel including a substrate having a front side, a back side, and a photosensitive region formed on or near the front side, a dielectric layer formed on the front side, and a metal stack having a bottom side and a top side, the bottom side being on the dielectric layer. A light guide is formed in the dielectric layer and the metal stack and extending from the front side of the substrate to the top side of the metal stack, the light guide having a refractive index equal to or greater than the refractive index of the substrate. Other implementations are disclosed and claimed.06-06-2013
20130140433Sensor Pixel Array and Separated Array of Storage and Accumulation with Parallel Acquisition and Readout - A demodulation image sensor, such as used in time of flight (TOF) cameras, performs the acquisition and readout of the pixels in parallel. This is used to avoid motion artifacts due to samplings performed separated in time.06-06-2013
20090272880GUIDED-MODE-RESONANCE TRANSMISSION COLOR FILTERS FOR COLOR GENERATION IN CMOS IMAGE SENSORS - Imager pixel arrays and methods for forming imager pixel arrays. An image sensor pixel includes a photosensor and a waveguide grating resonance filter formed over the photosensor. The waveguide grating resonance filter is configured to pass light to the photosensor in a wavelength band and to block light outside of the wavelength band. The waveguide grating resonance filter includes a grating material having a first refractive index and arranged in a grating pattern with a grating pitch, and has an effective refractive index that is a function of the first refractive index. A combination of the grating pitch and the effective refractive index is selected to correspond to the wavelength band.11-05-2009
20130200251IMAGING SENSORS WITH OPTICAL CAVITY PIXELS - An image sensor may be provided having a pixel array that includes optical cavity image pixels. An optical cavity image pixel may include a photosensitive element in a substrate and a reflective cavity formed from a frontside reflector that is embedded in an intermetal dielectric stack, a backside reflector formed in a dielectric layer above the photosensor that partially covers the photosensor, and sidewall reflectors formed in the substrate between adjacent photosensors using deep trench isolation techniques. Each optical cavity image pixel may also include a light-guide trench above the photosensor that guides light into the reflective cavity for that pixel. Each optical cavity pixel may also include color filter material in the trench. Light that is guided into the reflective cavity by the light-guide trench may experience multiple reflections from the reflectors of the reflective cavity before being absorbed and detected by the photosensor.08-08-2013
20130200253MULTIPLEXED READ-OUT ARCHITECTURE FOR CMOS IMAGE SENSORS - This invention targets improvement in CMOS sensors using a multiplexed read-out architecture in which pixels are output at the pixel V08-08-2013
20130175430SPARSELY-BONDED CMOS HYBRID IMAGER - A method and device for imaging or detecting electromagnetic radiation is provided. A device structure includes a first chip interconnected with a second chip. The first chip includes a detector array, wherein the detector array comprises a plurality of light sensors and one or more transistors. The second chip includes a Read Out Integrated Circuit (ROIC) that reads out, via the transistors, a signal produced by the light sensors. A number of interconnects between the ROIC and the detector array can be less than one per light sensor or pixel.07-11-2013
20130175429IMAGE SENSOR, IMAGE SENSING METHOD, AND IMAGE CAPTURING APPARATUS INCLUDING THE IMAGE SENSOR - An image sensor that includes a pixel array including pixels that sample a plurality of modulation signals having different phases from the reflected light and that output pixel output signals corresponding to the plurality of modulation signals, the output pixel output signals being used to generate first images, an integral time adjusting unit that detects a change in an integral time applied to generate the first images such that the integral time adjusting unit compares intensities of the first images to a reference intensity and determines an adjusted integral time when the change in the integral time is detected, and when the change in the integral time is detected, the pixel array generates second images that are subsequent to the first images by applying the adjusted integral time determined by the integral time adjusting unit based on the first images.07-11-2013
20130175431DETECTOR HAVING LARGE AREA AND METHOD OF MANUFACTURING THE SAME - A detector includes a substrate; two first regions, each first region having a linear shape, and the two first regions being separated from each other on the substrate and arranged in parallel; and a pixel region provided between the two first regions and including a plurality of pixels, the pixel region including a plurality of second regions perpendicular to the two first regions, each of the two first regions including a peripheral circuit portion, each of the plurality of second regions including a driver line, and a width of each of the plurality of second regions being equal to or less than a width of a single pixel.07-11-2013
20130175432DRIVING DEVICE FOR SOLID-STATE IMAGE PICKUP DEVICE CAPABLE OF SELECTING PARALLEL NUMBER OF FETS - A driving circuit includes first through N-th selective operation driving portions selectively producing first through N-th selective operation driving signals, a selection circuit selectively driving the first through the N-th selective operation driving portions in response to an input signal and a control signal, and a supplying arrangement combining the first through the N-th selective operation driving signals to supply a combined driving signal to a solid-stage image pickup device. An n-th selective operation driving portion includes (M×207-11-2013
20130175433SCANNING MICROSCOPE - The present invention relates to a scanning microscope, which can acquire an undistorted image of a desired area of a sample using a simple configuration. When a sample is observed, a galvano-scanner rotates a scanning mirror based on a supplied driving signal, so as to scan the sample with illumination light. A sampling circuit samples an electric signal acquired by performing photoelectric conversion on observation light from the sample, in synchronization with a sampling clock. If the scanning mirror is driven so that the rotation angle thereof non-linearly changes with respect to time, the sampling circuit appropriately suppresses sampling based on the sampling clock, so that sampling is executed only when the scanning mirror is at a predetermined position. The present invention can be applied to a scanning microscope.07-11-2013
20130168533CMOS IMAGE SENSOR AND OPERATING METHOD THEREOF - The inventive concept relates to a CMOS image sensor and an operating method of the CMOS image sensor. The operating method according to an embodiment of the inventive concept includes generating photoelectrons at a photo sensor element during a first time; generating photoelectrons at the photo sensor element during a second time shorter than the first time; and sensing the photoelectrons generated at the photo sensor element. A gate voltage of a transfer transistor connected to the photo sensor element is set differently at the first time and the second time. With an embodiment of the inventive concept, a dynamic range of the CMOS image sensor increases.07-04-2013
20080217514Pixel for CMOS Image Sensor Having a Select Shape for Low Pixel Crosstalk - A novel CMOS image unit pixel layout having a photodiode including an optically optimized square image sensing region. The square image sensing layout provides for reduced electrical and color crosstalk and improved modulation transfer function (MTF) between neighboring pixels of an array of pixels.09-11-2008
20120248293SOLID-STATE IMAGE PICKUP DEVICE - A solid-state image pickup device includes a pixel region including photoelectric conversion units, FDs, and transfer transistors, reset transistors, amplifier transistors, and a reference voltage supply line used to supply reference voltages to the photoelectric conversion units. In the device, the pixel region and the reference voltage supply line are disposed on a first semiconductor substrate, and at least the reset transistors or the amplifier transistors are disposed on a second semiconductor substrate. Furthermore, power supply lines used to supply voltages to the reference voltage supply line are disposed on the second semiconductor substrate. The device further includes second electric connection units which electrically connect the reference voltage supply line to the power supply line. The first electric connection units are disposed in the pixel region whereas the second electric connection units are disposed outside the pixel region.10-04-2012
20120248288DUAL WELL READ-OUT INTEGRATED CIRCUIT (ROIC) - Embodiments of the invention describe solutions directed towards having a single camera capable of capturing high speed laser return pulses for a target, as well as provide imaging information on the background of the target. This capability is enabled by having a read-out integrated circuit (ROIC) capable of extracting both types of information from a pixel of a focal plane array (FPA).10-04-2012
20130134296AD CONVERSION CIRCUIT AND IMAGING APPARATUS - An AD conversion circuit includes a reference signal generation unit, which generates a reference signal, a comparison unit, which ends a comparison process at a timing at which the reference signal has satisfied a predetermined condition with respect to the analog signal, a first path in which a signal is transferred through each of n delay units, a clock signal generation unit, which outputs a lower-order phase signal, a latch unit, which latches the lower-order phase signal, a higher-order count unit including a first counter circuit, which acquires a higher-order count value by performing a count operation using a signal output from any one of the delay units, a calculation unit, which generates a lower-order count signal, and a lower-order count unit, which acquires a lower-order count value by performing the count operation using the lower-order count signal.05-30-2013
20130134295IMAGING SYSTEMS WITH SELECTABLE COLUMN POWER CONTROL - Electronic devices may include image sensors having image pixel arrays with image pixels arranged in pixel rows and pixel columns. Each pixel column may be coupled to a column line having column readout circuitry. The column readout circuitry on each column line may include signal processing circuitry and a latch circuit. The latch circuit on each column line may be used to selectively enable and disable the signal processing circuitry on that column line. Each latch circuit may be coupled to first and second signal lines for globally enabling and disabling the signal processing circuitry on all of the column lines. Each latch circuit may be coupled to column decoder circuitry. The column decoder circuitry may provide a column-select signal to latch circuits on a chosen subset of column lines that enables the signal processing circuitry on those column lines by setting those latch circuits.05-30-2013
20130112850SYSTEM AND METHOD FOR GENERATING A DESELECT MAPPING FOR A FOCAL PLANE ARRAY - A method for generating a deselect mapping for a focal plane array according to one embodiment includes gathering a data set for a focal plane array when exposed to light or radiation from a first known target; analyzing the data set for determining which pixels or subpixels of the focal plane array to add to a deselect mapping; adding the pixels or subpixels to the deselect mapping based on the analysis; and storing the deselect mapping. A method for gathering data using a focal plane array according to another embodiment includes deselecting pixels or subpixels based on a deselect mapping; gathering a data set using pixels or subpixels in a focal plane array that are not deselected upon exposure thereof to light or radiation from a target of interest; and outputting the data set.05-09-2013
20130099098SOLID-STATE IMAGING DEVICE, MEMBERS FOR THE SAME, AND IMAGING SYSTEM - The present invention provides a solid-state imaging device including a pad capable of reducing inferior connection with an external terminal. The solid-state imaging device includes a first substrate provided, on its front face, with photoelectric conversion elements, a first wiring structure, a second substrate provided, on its front face, with at least a part of peripheral circuits, and a second wiring structure. The first substrate, the first wiring structure, the second wiring structure, and the second substrate are provided in this order. The first wiring structure includes a wiring layer including wirings made mainly of copper. The second wiring structure includes a wiring layer including wirings made mainly of copper. Wirings made mainly of copper in the wiring layer in the first wiring structure are bonded with wirings made mainly of copper in the wiring layer in the second wiring structure. The solid-state imaging device includes a pad formed of a conductive element made mainly of aluminum.04-25-2013
20130099099RADIATION DETECTOR AND METHOD - Embodiments of the invention provide a radiation detector comprising a pixel, the pixel having a first diode arranged to collect radiation-generated carriers; a second diode arranged to collect radiation-generated carriers; switching components operable to permit independent readout of the first diode and the second diode, wherein the first diode has a higher node capacitance than the second diode.04-25-2013
20130099097IMAGING APPARATUS AND IMAGING METHOD - Provided is an imaging apparatus including an imaging element section, an imaging optical system, a transmission/block section, an actuator, and an output section. The imaging element section includes a plurality of pixels, and the imaging optical system forms an image on the imaging element section, the image being formed by an electromagnetic wave from the outside. The transmission/block section transmits and blocks the electromagnetic wave to/against the imaging element section, the transmission/block section being disposed at an aperture stop position in the imaging optical system. The actuator drives the transmission/block section to move back and forth to be changed in state between transmission and blocking. The output section produces an image signal output being differential signaling between a pixel output from the imaging element section when the transmission/block section is in the transmission state, and a pixel output from the imaging element section when it is in the blocking state.04-25-2013
20130099096FLASH DETECTION AND LASER RESPONSE SYSTEM - A flash detection and laser response system includes a flash sensor configured to capture a plurality of sensor images, an image analyzer configured to identify at least a first image including a first flash event and to compute from the first image a direction of the flash event relative to the flash sensor, a laser, and a steering mechanism coupled to the laser and configured to steer disabling light from the laser in the direction of the flash event.04-25-2013
20130112854SOLID-STATE IMAGING DEVICE - The present invention provides a solid-state imaging device including a first substrate provided with a plurality of photoelectric conversion units thereon, and a second substrate provided with a reading circuit and parallel processing circuits thereon. The solid-state imaging device includes a DC voltage supply wiring configured to supply a DC voltage to the plurality of parallel processing circuits. The DC voltage supply wiring is formed by electrically connecting first conductive patterns provided on the first substrate with second conductive patterns provided on the second substrate.05-09-2013
20130112853SOLID-STATE IMAGING DEVICE - A solid-state imaging device 05-09-2013
20130112852SOLID-STATE IMAGE PICKUP DEVICE - A solid-state image pickup device includes a column ADC realizing higher precision and higher-speed conversion. Converters converts a signal of each pixels output via a corresponding vertical read line to a digital value by sequentially executing first to N-th (N: integer of three or larger) conversion stages. In the first to (N−1)th conversion stages, each converter determines a value of upper bits including the most significant bit of a digital value by comparing the voltage at a retention stage with a reference voltage while changing the voltage at a retention node. In the N-th conversion stage, each converter determines a value of remaining bits to the least significant bit by comparing the voltage at the retention node with the reference voltage while continuously changing the voltage at the retention node in a range of the voltage step in the (N−1)th conversion stage or a range exceeding the range.05-09-2013
20130112851SOLID-STATE IMAGING DEVICE - The solid-state imaging device 05-09-2013
20130126712DEVICE FOR DETECTING AN ANALYTE IN A BODILY FLUID - A device is proposed for detecting at least one analyte in a bodily fluid. The device comprises at least one test element with at least one two-dimensional evaluation region. The device furthermore comprises at least one spatially resolving optical detector having a plurality of pixels. The detector is designed to image at least part of the test element onto an image region. In the process, at least part of the evaluation region is imaged onto an evaluation image region. The detector is matched to the test element such that a predetermined minimum number of pixels is provided for each dimension within the evaluation image region. The pixels are arranged in a two-dimensional matrix arrangement. The matrix arrangement has pixel rows and pixel columns, wherein the pixel rows are arranged substantially parallel to a longitudinal direction of the evaluation region and/or of the evaluation image region.05-23-2013
20130126711LOW LIGHT VISION AND THERMAL IMAGING DEVICES WITH COOL CHIP COOLING - Improved low light vision and thermal imaging devices are provided. The devices of the present invention employ thermionic or thermotunneling cooling, with or without Avto Metals™, to ensure efficient operation under conditions of low illumination or the complete absence of illumination to detect emitted or reflected infrared and visible light radiation, significantly reducing thermal noise to produce superior image resolution and sensitivity within a small, lightweight footprint that will have a wide range of military, law enforcement, civilian, and other applications.05-23-2013
20130126710SOLID-STATE IMAGING DEVICE AND IMAGING DEVICE - A solid-state imaging device and an imaging device are capable of transferring a control signal to pixels formed in each chip of the solid-state imaging device, in which the plurality of chips are connected to each other, without an increase in a circuit size of the solid-state imaging device or an increase in the number of connectors between the chips. The solid-state imaging device, in which first and second substrates are electrically connected to each other via the connectors, includes a pixel unit in which a plurality of pixels each including a photoelectric conversion element disposed in the first substrate and a reading circuit disposed in the second substrate are arrayed two-dimensionally, and a read control circuit that controls reading of a signal from the pixels. The read control circuit includes a pulse generation unit and a logical unit.05-23-2013
20130126707PIXEL ARRAY AREA OPTIMIZATION USING STACKING SCHEME FOR HYBRID IMAGE SENSOR WITH MINIMAL VERTICAL INTERCONNECTS - Embodiments of a hybrid imaging sensor that optimizes a pixel array area on a substrate using a stacking scheme for placement of related circuitry with minimal vertical interconnects between stacked substrates and associated features are disclosed. Embodiments of maximized pixel array size/die size (area optimization) are disclosed, and an optimized imaging sensor providing improved image quality, improved functionality, and improved form factors for specific applications common to the industry of digital imaging are also disclosed.05-23-2013
20130126709SYSTEM AND METHOD FOR SUB-COLUMN PARALLEL DIGITIZERS FOR HYBRID STACKED IMAGE SENSOR USING VERTICAL INTERCONNECTS - Embodiments of a hybrid imaging sensor and methods for pixel sub-column data read from the within a pixel array.05-23-2013
20130126706APPARATUS HAVING A CONTROLLABLE FILTER MATRIX TO SELECTIVELY ACQUIRE DIFFERENT COMPONENTS OF SOLAR IRRADIANCE - Apparatus and method, as may be used to acquire different components of solar irradiance in a solar-based power generation system or as may be used in a sky imager, are provided. A filter matrix (05-23-2013
20130126708IMAGE SENSOR WITH TOLERANCE OPTIMIZING INTERCONNECTS - Embodiments of a hybrid imaging sensor that optimizes a pixel array area on a substrate using a stacking scheme for placement of related circuitry with minimal vertical interconnects between stacked substrates and associated features are disclosed. Embodiments of maximized pixel array size/die size (area optimization) are disclosed, and an optimized imaging sensor providing improved image quality, improved functionality, and improved form factors for specific applications common to the industry of digital imaging are also disclosed. Embodiments of the above may include systems, methods and processes for staggering ADC or column circuit bumps in a column or sub-column hybrid image sensor using vertical interconnects are also disclosed.05-23-2013
20130140439IMAGE PICKUP SYSTEM, METHOD FOR DRIVING IMAGE PICKUP ELEMENTS, AND RECORDING MEDIUM - An image pickup system includes an image pickup element with an image pickup region in which a plurality of pixels are arranged in a matrix, and a controller configured to control reading of signals from the pixels. The controller divides a first frame period in which a first image is read from the image pickup element into a plurality of divided frame periods, including first and second divided frame periods. When the number of pixels included in the first image is larger than the number of pixels included in a second image, a second frame period required for reading all signals from the pixels included in the second image is inserted between the first and second divided frame periods. A refresh cycle of the second image is shorter than a refresh cycle of the first image.06-06-2013
20080203278Solid state imaging device and imaging apparatus - A solid state imaging device having an image area in which a plurality of light receiving pixels is arranged on a semiconductor substrate of a first conductive type is disclosed. The device includes: a plurality of photosensor parts formed by providing on the semiconductor substrate a light receiving area and a photoelectric conversion area both configuring the light receiving pixel; a first well region formed on the opposite side of the light receiving area, having a second conductive type opposite to the first conductive type, and forming an overflow barrier; a second well region of the second conductive type formed in an area except a place corresponding to the photosensor part on the opposite side of the photoelectric conversion area; and a first conductive region formed in an area corresponding to the photosensor part on the opposite side of the photoelectric conversion area.08-28-2008
20130146748SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS - A solid-state imaging device includes pixels each of which has a photoelectric conversion portion that senses light and converts the sensed light into a charge; and an amplifying portion which is shared by a predetermined number of the pixels, amplifies the generated charge in the photoelectric conversion portion, and outputs a level of signal corresponding to the charge, wherein the a predetermined number of the pixels which share the amplifying portion are arranged in a first direction extending along a signal line via which the amplifying portion outputs the signal, and wherein a length of an area where the amplifying portion is formed along a second direction substantially intersecting the first direction is set to be equal to or more than a length of one pixel and to be less than a length of two pixels in the second direction.06-13-2013
20130146749IMAGE SENSOR AND METHOD OF READING OUT AN IMAGE SENSOR - An image sensor, in particular a CMOS image sensor, for electronic cameras includes a plurality of light-sensitive pixels arranged in rows and columns for generating exposure-dependent pixel signals. A plurality of column lines, at least one precharge circuit for charging or discharging the column lines and at least one column readout circuit for reading out the pixel signals of the respective column are associated with a respective column. The image sensor has at least one switching device which is adapted to couple, in a first switch state, one of the column lines of a respective column to the precharge circuit and another one of the column lines of the respective column to the column readout circuit.06-13-2013
20130146750LIGHT DETECTION APPARATUS AND LIGHT DETECTION METHOD - A light detection apparatus includes an image sensor, a signal obtaining unit, an exposure-time-period determination unit, and an exposure controller. The signal obtaining unit is configured to obtain a first dark current being a dark current of the image sensor in a first exposure time period, and a second dark current being a dark current of the image sensor in a second exposure time period. The exposure-time-period determination unit is configured to determine an optimal exposure time period of the image sensor based on the first dark current and the second dark current. The exposure controller is configured to control the image sensor to be exposed to light for the optimal exposure time period.06-13-2013
20130146751TIME DETECTION CIRCUIT, AD CONVERTER, AND SOLID STATE IMAGE PICKUP DEVICE - A time detection circuit may include: a delay unit configured to have a plurality of delay units, each of which delays and outputs an input signal, and start an operation at a first timing relating to an input of a first pulse; a latch unit configured to latch logic states of the plurality of delay units; a count unit configured to perform a count operation based on a clock output from one of the plurality of delay units; a count latch unit configured to latch a state of the count unit; and a latch control unit configured to enable the latch unit at a second timing relating to an input of a second pulse and cause the latch unit and the count latch unit to execute a latch at a third timing at which a predetermined time has elapsed from the second timing.06-13-2013
20130146747IMAGE SENSORS WITH VERTICAL JUNCTION GATE SOURCE FOLLOWER PIXELS - An image sensor pixel suitable for use in a back-side-illuminated or a front-side-illuminated sensor arrangement is provided. The image sensor pixel may be a small size pixel that includes a source follower implemented using a vertical junction field effect (JFET) transistor. The vertical JFET source follower may be integrated directly into the floating diffusion node, thereby eliminating excess metal routing and pixel area typically allocated for the source follower in conventional pixel configurations. Pixel area may instead be allocated for increasing the charge storage capacity of the photodiode or can be used to reduce pixel size while maintaining pixel performance. Using a vertical junction field effect transistor in this way simplifies pixel addressing operations and minimizes random telegraph signal (RTS) noise associated with small size metal-oxide-semiconductor (MOS) transistors.06-13-2013
20130181118SOLID-STATE IMAGE PICKUP DEVICE AND CONTROL METHOD THEREOF, AND CAMERA - An object of the invention is to cause a part of charge spilling from a photoelectric conversion unit to flow into a charge holding unit and thereby extend dynamic range and at the same time improve image quality. There is provided a solid-state image pickup device having a pixel including: a photoelectric conversion unit generating and accumulating charge by means of photoelectric conversion; a first charge holding unit being shielded from light, and being adaptable to accumulate a part of charge spilling from the photoelectric conversion unit in a period during which the photoelectric conversion unit generates and accumulates charge; an amplifying unit (SF-MOS) amplifying charge; a first transfer unit (Tx-MOS) transferring the charge accumulated in the photoelectric conversion unit to the amplifying unit; and a second transfer unit (Ty-MOS) transferring the charge accumulated in the first charge holding unit to the amplifying unit.07-18-2013
20130181113SOLID-STATE IMAGING EQUIPMENT - According to one embodiment, an image sensor, which may form part of a solid-state imaging device, such as a camera, comprises a photoelectric conversion element array, a light collection optical array, and a mirror unit that separates colors according to wavelength. Of the light that enters the image sensor, the colors are separated and at least a first colored ray is transmitted by the mirror unit to a dedicated photoelectric conversion element. The mirror unit reflects at least a second and third colored ray toward a laminate photoelectric conversion element for the second and third colored ray.07-18-2013
20130181114SOLID-STATE IMAGING DEVICE - According to one embodiment, an image sensor, which is a solid imaging device, includes a photoelectric conversion element array, a condensing optical element array, filter and reflector units, and a reflective unit. The reflective unit further reflects a light reflected by the filter and reflector units. The condensing optical element is arranged so that it contains a first photoelectric conversion element and a portion of a second or a third photoelectric conversion element, which are adjacent to the first photoelectric conversion element. The arrangement of the photoelectric conversion elements may comprise a cell. The reflective unit includes at least a first reflective surface and a second reflective surface. The first reflective surface is opposite to the filter and reflector units. The second reflective surface surrounds the filter and reflector units and the first reflective surface for each cell.07-18-2013
20130181115SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus includes: a read out circuit configured to convert the analog signal generated by a pixel into a digital signal. The read out circuit includes an analog circuit, a digital circuit and a logic circuit arranged between the analog circuit and the digital circuit. The analog circuit is formed within first and second semiconductor regions of first and second conductivity type. The logic circuit is formed within third and fourth semiconductor regions of the first and second conductivity types. The digital circuit is formed within a fifth and sixth semiconductor regions of the first and second conductivity types. The first to sixth semiconductor regions are isolated one from another. And, a number of elements included in the logic circuit is smaller than a number of elements included in the digital circuit.07-18-2013
20130181116IMAGE PICKUP APPARATUS AND METHOD OF DRIVING THE SAME - In an image pickup apparatus, a plurality of vertical signal lines are disposed in each pixel column. A pixel array includes pixels of first color and pixels of second color different from the first color. Two pixels of the first color are located at different row addresses and different column addresses. Signals from two pixels of the same color are processed simultaneously by a plurality of first column circuits.07-18-2013
20130181117IMAGE PICKUP APPARATUS AND METHOD FOR DRIVING THE SAME - An image pickup apparatus of the present invention includes a clipping circuit that clips the voltage of an input node of an amplifying unit in a pixel. The clipping circuit can operate at least in a time period in which a charge is transferred from a photoelectric conversion unit to the input node of the amplifying unit, and can switch among multiple clipping voltages.07-18-2013
20130181112QUALITY OF OPTICALLY BLACK REFERENCE PIXELS IN CMOS iSoCs - Aspects relate to improved optically black reference pixels in a CMOS iSoc sensor. A system can include a pointer P07-18-2013
20080197269SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus including: an image section with units arranged into a matrix each having an electric charge generation means for generating signal charges corresponding to the amount of an incident electromagnetic wave, an electric charge accumulation means for accumulating signal charges generated at the electric charge generation means, a signal transfer means for transferring signal charges generated at the electric charge generation means to the electric charge accumulation means, a reset means for resetting the electric charge accumulation means, an amplification means for amplifying a signal corresponding to signal charges accumulated at the electric charge accumulation means, and a selection means for activating an outputting to a signal output line of the signal amplified by the amplification means; and a control section for, when resetting the electric charge accumulation means, effecting control so as to bring a potential of a control terminal of the transfer means to a negative potential at least immediately before a reset operation by said reset means and to bring the potential of the control terminal of the transfer means to a potential higher than the negative potential after the reset operation.08-21-2008
20080197268Solid-state imaging device and imaging apparatus - There is provided a solid-state imaging device including: a plurality of aperture pixels configured to be used for capturing of an image; a plurality of first light-shielded pixels configured to be shielded from light for detection of an optical black level, a temperature dependence of a dark current in the first light-shielded pixels being larger than a temperature dependence of a dark current in the aperture pixels; and a plurality of second light-shielded pixels configured to be shielded from light for detection of an optical black level, a temperature dependence of a dark current in the second light-shielded pixels being smaller than a temperature dependence of a dark current in the aperture pixels.08-21-2008
20080197267Photo Detector Apparatus - The present invention relates to a photodetector having a structure capable of increasing the dynamic range and of improving the S/N ratio for light detection. The photodetector includes a pixel including a photodiode, an integrating circuit, a CDS circuit, a selecting circuit, and a switching circuit. Charges generated by the photodiode are accumulated in an integral capacitor unit in the integrating circuit, and a first voltage value V08-21-2008
20110248147DUAL CONVERSION GAIN GATE AND CAPACITOR COMBINATION - An imaging device comprising a plurality of photosensors, a shared diffusion region for receiving charge generated by the photosensors, and a dual conversion gain element that can be selectively coupled to the shared diffusion region to increase a conversion gain of the shared diffusion region. A method of operating such an imaging device is also described, comprising resetting a shared diffusion region, sampling a reset voltage level at the shared diffusion region, transferring charge accumulated in one of a plurality of photosensors to the shared diffusion region, sampling a pixel signal voltage level at the shared diffusion region, and activating a dual conversion gain element to increase a conversion gain of the shared diffusion region.10-13-2011
20120256078SOLID-STATE IMAGING DEVICE AND DRIVING METHOD THEREOF, AND ELECTRONIC APPARATUS USING THE SAME - Provided is a solid-state imaging device including: a pixel array section that pixels which detect a physical quantities are arranged in two dimensions of matrix; an AD converting section that performs AD (Analog-Digital) conversion for a plurality of channels of analog pixel signals which are read-out from the pixel array section; and a control section that sets quantized units AD-converted by the AD conversion section according to a gain setting of the unit pixel signal, wherein the control section determines the grayscale number of digital outputs AD-converted for at least one channel of the unit pixel signals according to the gain setting of the pixel signal.10-11-2012
20130153748SOLID-STATE IMAGE SENSOR AND ELECTRONIC APPARATUS - A solid-state image sensor includes pixel units each having a group of pixels forming a polygonal outer shape to cover an entire light receiving plane. The polygonal outer shape has at least six equilateral sides and the group of pixels includes pixels receiving light of at least four different colors.06-20-2013
20130153749PHOTOELECTRIC CONVERSION DEVICE AND OPERATION METHOD FOR PHOTOELECTRIC CONVERSION DEVICE - A photoelectric conversion unit generates an amount of charges. A differential amplifier has first and second input transistors and is configured to output a current signal based on the amount of charges. A reset voltage providing unit is configured to provide a reset voltage for input nodes of the first and second input transistors. A transfer transistor is electrically connected to, and configured to transfer a charge to, the input node of the first input transistor. A reset transistor is electrically connected to one of the input nodes, and configured to control an electrical connection between the reset voltage providing unit and the input node connected to the reset transistor. A connection transistor has first and second nodes and is configured to control an electrical connection between the input nodes. The first and second nodes are connected to the input nodes of the first and second input transistors, respectively.06-20-2013
20100308209System for Charge-Domain Electron Subtraction in Demodulation Pixels and Method Therefor - A method and system enable the subtraction of charge carrier packages in the low-noise charge domain, which is particularly interesting for the operation of demodulation pixels when high background light signals are present. The method comprises the following steps: demodulation of an optical signal and integration of the photo-generated charge carriers; charge transfer to an external capacitance. The second step means a recombination of electrons and holes in the charge domain and an influencing of the opposite charge carriers on the second plate of the capacitance. This approach allows for low-noise subtraction of charge packages in the charge domain and, at the same time, for creating pixels with much higher fill factors because the capacitances can be optimized for storing just the differential parts, without the DC component.12-09-2010
20100308208DETECTING DEVICE AND SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes a light receiving section having a plurality of threshold voltage modulation pixel circuits each configured including a MOS transistor having a gate electrode connected to a supply terminal of a gate voltage of a vertical scanning circuit, and a source electrode connected to one end of each capacitor of a line memory group via a switching element, and a photodiode having an anode connected to a back-gate electrode of the MOS transistor and a cathode connected to a drain electrode thereof, and a buffer circuit having an input terminal connected to a supply line of a control voltage of the control voltage supply means adapted to supply the vertical scanning circuit with the control voltage, and an output terminal connected to the other end of each capacitor, and having a signal transfer characteristic the same as that of the pixel circuit.12-09-2010
20120273657IMAGING DEVICE AND DRIVING METHOD FOR SOLID-STATE IMAGE SENSOR - An imaging device comprises a solid-state image sensor including a plurality of unit pixels, and a driving unit. Each unit pixel includes a photo-electric converter that converts incident light into a signal charge, a holding unit that temporarily holds the signal charge obtained by the photo-electric converter, a first transfer gate arranged between the photo-electric converter and the holding unit, that transfers the signal charge to the holding unit, a charge-voltage converter that converts the signal charge into a voltage signal, and a second transfer gate arranged between the holding unit and the charge-voltage converter, that transfers the signal charge to the charge-voltage converter, and that is in a non-conductive state in the case where an image capturing operation is performed in the photo-electric converter. The driving unit drives the solid-state image sensor so as to supply three or more mutually different electric potentials to the first transfer gate.11-01-2012
20120273655IMAGE SENSING APPARATUS AND CONTROL METHOD THEREOF - An image sensing apparatus which has an effective pixel portion and a light-shielded pixel portion which is arranged at an end of the effective pixel portion, comprises a detection unit which detects a column offset component for each column by performing weighted average cyclic calculation on the column at the light-shielded pixel portion; a correction unit which corrects a column offset superimposed at the effective pixel portion by performing cyclic calculation while a plurality of frames inherit the detected column offset component, and subtracting a column offset component calculated in every cyclic calculation from an output signal of the effective pixel portion; and a control unit which divides the light-shielded pixel portion into a plurality of blocks for each pixel region to be read out by one frame, and controls a block to be read out for each frame.11-01-2012
20120273654IMAGE SENSOR ARRAY FOR BACK SIDE ILLUMINATION WITH GLOBAL SHUTTER USING A JUNCTION GATE PHOTODIODE - The present invention provides a junction gate photo-diode (JGP) pixel that includes a JGP accumulating charge in response to impinging photons. The JGP is positioned on a substrate and includes a top n layer, a middle p layer and a bottom n layer forming a n-p-n junction, and a control terminal coupled to the top n layer. Also includes is a floating diffusion (FD) positioned on the substrate and coupled to a pixel output line through an amplifier. Also includes is a pinned barrier (PB) and a storage gate (SG) positioned on the substrate between the JGP and the FD. The PB temporarily blocks charge transfer between the JGP and the FD, and the SG stores the accumulated charge from the JGP, and transfers the stored charge to the FD for readout.11-01-2012
20120273653IMAGE SENSOR ARRAY FOR THE BACK SIDE ILLUMINATION WITH JUNCTION GATE PHOTODIODE PIXELS - The present invention relates to a junction gate photo-diode (JGP) pixel that includes a JGP for accumulating charge in response to impinging photons. The JGP is positioned on a substrate and includes a top n layer, a middle p layer and a bottom n layer forming a n-p-n junction, and a control terminal coupled to the top n layer. Also included is a floating diffusion (FD) positioned on the substrate and coupled to a pixel output line through an amplifier. Also included is a pinned barrier (PB) positioned on the substrate between the JGP and the FD, the PB temporarily blocks charge transfer between the JGP and the FD. The accumulated charge is transferred from the JGP to FD by applying a control voltage to the JGP control terminal.11-01-2012
20120273652SYSTEMS AND METHODS FOR IMAGE SENSING - Systems and methods for image sensing are disclosed. An image sensor includes a pixel having an active region and a plurality of reflective interfaces. The active region is configured to convert light absorbed by the pixel into an electrical signal. The plurality of reflective interfaces cause the light absorbed by the pixel to resonate within the active region. A method for converting absorbed light into an electrical signal with an image sensor includes absorbing light with the pixel of the image sensor, and reflecting the absorbed light with a plurality of reflective interfaces embedded in the pixel to generate a resonance within the active region.11-01-2012
20120273651DUAL CONVERSION GAIN PIXEL METHODS, SYSTEMS, AND APPARATUS - Dual conversion gain pixel methods, system, and apparatus are disclosed. Dual conversion gain may be obtained by configuring an active pixel having a storage node, a first connection region, a second connection region, and a capacitor coupled between the storage node and the second connection region to introduce a first conversion gain by connecting the first connection region to a power source and connecting the second connection region to a current bias source and reconfiguring the active pixel to introduce a second conversion gain by connecting the second connection region to the power source and connecting the first connection region to the current bias source.11-01-2012
20110233383IMAGING APPARATUS - An imaging apparatus is realized which enables a thin finger vein authentication apparatus having a thickness installable in a portable information device. A light beam emitted from an object passes through a visible light cut-off filter 09-29-2011
20110233382Method and Apparatus for High Resolution Photon Detection Based on Extraordinary Optoconductance (EOC) Effects - The inventors disclose a new high performance optical sensor, preferably of nanoscale dimensions, that functions at room temperature based on an extraordinary optoconductance (EOC) phenomenon, and preferably an inverse EOC (I-EOC) phenomenon, in a metal-semiconductor hybrid (MSH) structure having a semiconductor/metal interface. Such a design shows efficient photon sensing not exhibited by bare semiconductors. In experimentation with an exemplary embodiment, ultrahigh spatial resolution 4-point optoconductance measurements using Helium-Neon laser radiation reveal a strikingly large optoconductance property, an observed maximum measurement of 9460% EOC, for a 250 nm device. Such an exemplary EOC device also demonstrates specific detectivity higher than 5.06×1009-29-2011
20110233381Photoelectric conversion device - An electric conversion device may include A/D converters each of which includes a pulse delay circuit and an encoder, the pulse delay circuit including delay units each of which delaying a pulse signal with a delay time based on the difference between a voltage of a pixel signal and a reference voltage, the delay units being connected so that the pulse signal can circulate through the delay units, the encoder outputting a digital value based on the number of the delay units that the pulse signal passes through within a predetermined period of time. The encoder may include a latch circuit that includes latch units storing delay information, the delay information being output when the pulse signal passes through each of the delay units, an encoder unit that outputs the digital value based on the delay information, and a counter unit that counts the number of circulations.09-29-2011
20100314530PHOTOELECTRIC CONVERSION DEVICE AND IMAGE CAPTURING DEVICE - A photoelectric conversion device includes a pixel output line, a pixel which outputs a signal to the pixel output line, an amplifier unit which amplifies the signal output to the pixel output line, and a holding capacitor which holds the signal output from the amplifier unit. The photoelectric conversion device outputs a pixel signal based on the signal held by the holding capacitor. The amplifier unit includes a variable amplifier stage which amplifies a signal output to the pixel output line at a gain selected from a plurality of gains, and a buffer stage which amplifies the signal output from the variable amplifier stage, the amplified signal being held by the holding capacitor to hold the signal.12-16-2010
20130153750IMAGING DEVICE - A horizontal driving control unit of an imaging device supplies dummy pulse signals to a horizontal driving unit at least at a part of period during a period from a start time point of each horizontal blanking period to a last signal sampling time point defined by a sampling control signal.06-20-2013
20130153751IMAGING APPARATUS - An imaging apparatus includes a sensor chip which has pad electrodes, to which electrical signals to be supplied to a pixel array are input, a glass substrate on which first wiring patterns connected to signal lines, to which signals of the pixel array are output, and second wiring patterns connected to pad electrodes are formed, an upper signal processing chip and a lower signal processing chip which have pad electrodes to which signals processed by signal processing circuits are output, and flexible printed boards which have FPC wiring electrically connected to the pad electrodes and FPC wiring electrically connected to the second wiring patterns formed on the glass substrate.06-20-2013
20130119237AMBIENT LIGHT ILLUMINATION FOR NON-IMAGING CONTACT SENSORS - A sensor is provided for capturing images of skin topology having an upper surface providing a platen, and a one or two-dimensional array of light sensing pixel elements for receiving light representative of the topology of skin when upon the upper surface and illuminated by at least redirected ambient light received within the sensor through the upper surface. One or more layers or coatings of reflective or scattering materials are provided in the sensor for redirecting ambient light by one or more of reflection, scattering, or propagation towards the platen to illuminate the skin. The pixel elements are sensitive to one or more selected wavelengths or wavelength ranges of the ambient light present. Optional light source(s) may be provided for use when ambient light present is inadequate for proper sensor operation.05-16-2013
20120280109METHOD, APPARATUS AND SYSTEM TO PROVIDE CONDUCTIVITY FOR A SUBSTRATE OF AN IMAGE SENSING PIXEL - Techniques for promoting conductivity in a substrate for a pixel array. In an embodiment, an isolation region and a dopant well are disposed within an epitaxial layer adjoining the substrate, where a portion of the dopant well is between the substrate and a portion of the isolation well. In another embodiment, a contact is further disposed within the epitaxial layer, where a portion of the isolation region surrounds a portion of the contact.11-08-2012
20110303824Apparatus for Sub-Wavelength Near-Field Focusing of Electromagnetic Waves - Planar sub-wavelength structures provide superlensing, i.e., electromagnetic focusing beyond the diffraction limit. The planar structures use diffraction to force the input field to converge to a spot on the focal plane. The sub-wavelength patterned structures manipulate the output wave in such a manner as to form a sub-wavelength focus in the near field. In some examples, the sub-wavelength structures may be linear grating-like structures that can focus electromagnetic radiation to lines of arbitrarily small sub-wavelength dimension, or two dimensional grating-like structures and Bessel (azimuthally symmetric) structures that can focus to spots of arbitrarily small sub-wavelength dimensions. The particular pattern for the sub-wavelength structures may be derived from the desired focus. Some examples describe sub-wavelength structures that have been implemented to focus microwave radiation to sub-wavelength dimensions in the near field.12-15-2011
20110303823SOLID-STATE IMAGING DEVICE - A solid-state imaging device of one embodiment includes a light receiving section including of a plurality of pixels 12-15-2011
20110303822ELECTRON MULTIPLICATION IMAGE SENSOR AND CORRESPONDING METHOD - The invention relates to image sensors and more particularly those which are intended to capture images at low luminance levels. An active-pixel image sensor is provided, each pixel comprising, on the surface of a semiconductor active layer, a photodiode region adjacent a transfer gate itself adjacent a charge storage region, the transfer gate permitting, when it receives a transfer pulse, the transfer of charge from the photodiode region to the storage region. The photodiode region is adjacent an accelerating gate isolated from the semiconductor active layer. Switching means are provided so as to apply to the accelerating gate, during an integration phase preceding the transfer pulse, a series of high-potential/low-potential alternations inducing an electric field alternately in one direction and in the other direction between the photodiode region and the active layer region located beneath the accelerating gate. Impacts with atoms of the lattice create secondary electrons, thereby increasing the sensitivity of the sensor.12-15-2011
20110303821Active Photosensing Pixel - An active photosensing pixel is disclosed, in which a two-terminal photosensing transistor has a first terminal coupled to a first node, a second terminal coupled to a selection line and a control terminal connected to the second terminal. A driving transistor has a first terminal coupled to a first reference voltage, a second terminal coupled to an output line and a control terminal connected to the first node. A reset capacitor has a first terminal connected to the control terminal of the two-terminal photosensing transistor, and a second terminal connected to the first node.12-15-2011
20110309236MATERIALS, SYSTEMS AND METHODS FOR OPTOELECTRONIC DEVICES - A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.12-22-2011
20110309235A/D CONVERTER, SOLID-STATE IMAGE SENSOR USING PLURALITY OF A/D CONVERTERS AND DRIVING METHOD OF A/D CONVERTER - An analog-to-digital converter converts an analog signal into a digital signal by measuring a time period until a magnitude relation between a voltage level of a reference signal that changes along with time and a voltage level of the analog signal is inverted. The converter comprises a holding unit which holds, as a voltage level that is an analog value, an offset value of the analog-to-digital converter upon analog-to-digital converting a reference voltage level by the analog-to-digital converter, wherein the offset value of the analog-to-digital converter is corrected by changing the voltage level of the analog signal by the voltage level of the offset value held by the holding unit.12-22-2011
20110309234IMAGE SENSING MODULE - The present invention provides an image sensing module including an image sensing device and a calculation device. The image sensing device includes a plurality of pixels for acquiring an operation image containing an object image. The calculation device stores a look-up table regarding a temperature related parameter and a position deviation of the object image at each pixel associated with the temperature related parameter, and selects a deformation error from the look-up table according to the temperature related parameter corresponding to the operation image so as to correct a current position of the object image in the operation image.12-22-2011
20110309233SELECTED SPECTRAL ABSORPTION OF NANOWIRES - Methods, apparatuses, systems, and devices relating to fabricating one or more nanowires are disclosed. One method for fabricating a nanowire includes: selecting a particular wavelength of electromagnetic radiation for absorption for a nanowire; determining a diameter corresponding to the particular wavelength; and fabricating a nanowire having the determined diameter. According to another embodiment, one or more nanowires may be fabricated in an array, each having the same or different determined diameters. An image sensor and method of imaging using such an array are also disclosed.12-22-2011
20110309232HIGH DYNAMIC RANGE IMAGING SYSTEMS - An imaging system may include an imager with pixels and with reset lines that can be selectively deactivated and floated. When the reset lines are deactivated and floated, the reset lines may be connected to floating diffusion nodes in the pixels to increase the capacitance of the floating diffusion nodes. The reset lines may have parasitic capacitances that are used to supplement the capacitances of the floating diffusion nodes, when the reset lines are connected to the floating diffusion nodes. The imager may be used to capture high dynamic range images by simultaneously capturing a first image with a long integration time and a second image with a short integration time. The first and second images may be combined into a high dynamic range image.12-22-2011
20130187027IMAGE SENSOR WITH INTEGRATED AMBIENT LIGHT DETECTION - An image sensor having an image acquisition mode and an ambient light sensing mode includes a pixel array having pixel cells organized into rows and columns for capturing image data and ambient light data. Readout circuitry is coupled via column bit lines to the pixels cells to read out the image data along the column bit lines. An ambient light detection (“ALD”) unit is selectively coupled to the pixel array to readout the ambient light data and to generate an ambient light signal based on ambient light incident upon the pixel array. Control circuitry is coupled to the pixel array to control time sharing of the pixels cells between the readout circuitry during image acquisition and the ALD unit during ambient light sensing.07-25-2013
20130187028IMAGERS HAVING VARIABLE GAIN AND RELATED STRUCTURES AND METHODS - The present application relates to imagers having variable gain and related structures and methods. The gain of the imager may vary between rows of the imager. Such variability may be achieved by suitable design of a readout integrated circuit (ROIC). The ROIC may provide different integration period durations for different rows of the imager. Different integration capacitances may be provided for pixels of different rows of the imager. The gain of a column buffer may be varied when operating on output signals of pixels from different rows.07-25-2013
20120001056CCD-BASED MULTI-TRANSISTOR ACTIVE PIXEL SENSOR ARRAY - A floating electrode is used to detect ions in close proximity to the electrode. The electrode is charge coupled to other electrodes and to other transistors to form a pixel that can be placed into an array for addressable readout. It is possible to obtain gain by accumulating charge into another electrode or onto a floating diffusion (FD) node or directly onto the column line. It is desirable to achieve both a reduction in pixel size as well as increase in signal level. To reduce pixel size, ancillary transistors may be eliminated and a charge storage node with certain activation and deactivation sequences may be used.01-05-2012
20120001054SENSING DEVICE AND IMAGE SENSOR MODULE THEREOF - An image sensor module is installed in a sensing device, and is used to detect a reflected light of an object. The image sensor module includes a carrier, a light sensing element, and a package body. The light sensing element is disposed on a substrate. The carrier is disposed on the substrate in the sensing device. The light sensing element is installed in the carrier, and is electrically connected with the substrate via multiple solder balls. The package body is installed on the carrier, and has a reflecting and diverting element, which is located between the light sensing element and the object and is used for reflecting reflected light of the object and diverting the reflected light towards a receiving direction of the light sensing element. The light sensing element receives the reflected light and generates a corresponding sensing signal.01-05-2012
20120006973IMAGE SENSOR WITH SAMPLE AND HOLD CIRCUITRY FOR ADDRESSING TIME VARIANT NOISE - An image sensor includes an array of pixels. Each pixel has at least one photo-sensitive element. Readout circuitry receives an analog signal from each pixel at a first time and at a second time, between which the analog signal changes. The image sensor further includes associated support circuitry which is a source of time variant noise. The signal level at both first and second times includes pixel noise. Sample and hold circuitry is provided to maintain substantially level at least a proportion of this support circuitry noise time invariant at the sensor output between the first time and the second time.01-12-2012
20120018620BACKSIDE ILLUMINATED IMAGING SENSOR WITH VERTICAL PIXEL SENSOR - A backside illuminated imaging sensor includes a vertical stacked sensor that reduces cross talk by using different silicon layers to form photodiodes at separate levels within a stack (or separate stacks) to detect different colors. Blue light-, green light-, and red light-detection silicon layers are formed, with the blue light detection layer positioned closest to the backside of the sensor and the red light detection layer positioned farthest from the backside of the sensor. An anti-reflective coating (ARC) layer can be inserted in between the red and green light detection layers to reduce the optical cross talk captured by the red light detection layer. Amorphous polysilicon can be used to form the red light detection layer to boost the efficiency of detecting red light.01-26-2012
20120018619Method of Resetting a Photosite, and Corresponding Photosite - A method of resetting a photosite is disclosed. Photogenerated charges accumulated in the photosite are reset by recombining the photogenerated charges with charges of opposite polarity.01-26-2012
20120018618Imaging Device Having Improved Performance and Method of Controlling It - Imaging device comprising at least one photosite comprising a charge storage semiconductor zone, a charge collection semiconductor zone and transfer means designed to permit charge transfer between the charge storage zone and the charge collection zone, characterized in that the charge storage semiconductor zone comprises a lower semiconductor zone and a conduction channel buried beneath the upper surface of the photosite and connecting said lower semiconductor zone to the charge collection zone.01-26-2012
20120018617Semiconductor device, solid-state imaging device, method for manufacturing semiconductor device, method for manufacturing solid-state imaging device, and electronic apparatus - Disclosed herein is a semiconductor device including an element isolation region configured to be formed on a semiconductor substrate, wherein the element isolation region is formed of a multistep trench in which trenches having different diameters are stacked and diameter of an opening part of the lower trench is smaller than diameter of a bottom of the upper trench.01-26-2012
20120018616Optics for multi dimensional imaging - Optical systems and methods in accordance with some embodiments discussed herein can receive one or more beams of light from the system's field of view. Internal optical components can then direct the beam of light, including splitting the beam of light, rotating at least one of the split beams of light, and displacing one or more of the beams of light, such that the split beams of light are parallel to each other. Each beam of light may then be directed onto at least one linear detector array. The linear detector array can transform the light into electrical signals that can be processed and presented in a human-readable display.01-26-2012
20130193307SYSTEM, METHOD, AND DEVICE FOR SUPPRESSION OF DARK CURRENT - A method, system and device for reducing dark current, by clamping the voltage across the photodiode to about zero using local storage of charge, in an array of pixel cells in which each pixel cell has a photodiode configured to receive light and generate a photocharge during an integration period.08-01-2013
20130193308Multiband Photodetector Utilizing Unipolar and Bipolar Devices - Multi-band photodetectors can be formed by series connecting unipolar and, optionally, bipolar semiconductor structures, each having different photodetection bands. Under default mode of operation, the detector with highest resistance and lowest current will be the current limiting device and will be the active photodetector. When the active photodetector is illuminated with strong light in its own detection band it will be optically biased. This active photodetector will no longer be the highest resistance device, and the next photodetector will be the active photodetector. Repeating this operation pattern, allows switching photodetection bands of the multi-band photodetector. The resistances, dark current and photocurrent of the devices should be engineered to have proper switching. Moreover, the illuminating surface, and photodetector placement should be optimized for proper light biasing. The current passing through the device will always be equal to the current of the active photodetector.08-01-2013
20130193309IMAGE PICKUP APPARATUS CAPABLE OF CONTROLLING EXPOSURE DURING MOTION WITH HIGH SHUTTER SPEED, CONTROL METHOD THEREFOR, AND STORAGE MEDIUM - An image pickup apparatus which is capable of suppressing changes in luminance during motion with high shutter speed while minimizing image degradation. An image pickup device accumulates electric charge corresponding to an amount of light incident thereon. An amplification unit amplifies a signal obtained as a result of accumulating electric charge in the image pickup apparatus. A control unit controls an electric charge accumulation time period in the image pickup device. An adjustment unit adjusts an amplification factor for the amplification unit. In a case where the control unit changes the electric charge accumulation time period while the image pickup device is repeatedly accumulating electric charge, the adjustment unit adjusts an amplification factor in accordance with the amount of change in the electric charge accumulation time period, and after adjustment, the adjustment unit brings the adjusted amplification factor close to an amplification factor before adjustment in steps.08-01-2013
20130193305VARIABLE VOLTAGE ROW DRIVER FOR CMOS IMAGE SENSOR - An example image sensor includes a plurality of pixels arranged in an array of columns and rows, a row driver, and a control logic circuit. The row driver is coupled to pixels in a row of the array to provide a variable driving voltage to drive transistors included in the pixels of the row. The control logic circuit is coupled to provide one or more control logic signals to the row driver. The row driver adjusts a magnitude of the driving voltage in response to the one or more control logic signals.08-01-2013
20130193306ANALOG-DIGITAL CONVERTER, ANALOG-DIGITAL CONVERSION METHOD, IMAGE PICKUP DEVICE, METHOD OF DRIVING THE SAME, AND CAMERA - An analog-digital converter includes: comparators disposed to correspond to analog signals which are converted into digital signals and configured to compare a voltage value of the analog signal, which is converted into the digital signal, with a voltage value of a predetermined reference signal; counters disposed to correspond to the comparators and configured to count a count value at the time point when the comparison process of the corresponding comparator is finished; and a determiner configured to determine a time point when all the comparators finish their comparison processes.08-01-2013
20130193310PHOTOELECTRIC CONVERSION APPARATUS AND IMAGE PICKUP SYSTEM - A photoelectric conversion apparatus includes a first capacitance and a second capacitance that hold a signal, a switch provided between a signal line and the first capacitance, a capacitance adjustment unit electrically connected to the second capacitance, and a connection unit configured to electrically connect the first capacitance provided to one of signal processing units to the second capacitance provided to another one of the signal processing units.08-01-2013
20130193311SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS - The solid-state imaging device includes an imaging region having pixel units two-dimensionally arranged, each of the pixel units including a photodiode formed on a semiconductor substrate. The imaging region includes, as a unit of arrangement, a pixel block having four of the pixel units arranged in a two-by-two matrix. The pixel block includes a red pixel detecting a red signal, a blue pixel detecting a blue signal, a white pixel detecting a first luminance signal, and another white pixel detecting a second luminance signal. A light attenuation filter is provided above the other white pixel to reduce transmittance of light in a visible light region.08-01-2013
20130193312SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a method of manufacturing a back-illuminated solid-state imaging device including forming a mask with apertures corresponding to a pixel pattern on the surface of a semiconductor layer, implanting second-conductivity-type impurity ions into the semiconductor layer from the front side of the layer to form second-conductivity-type photoelectric conversion parts and forming a part where no ion has been implanted into a pixel separation region, forming at the surface of the semiconductor layer a signal scanning circuit for reading light signals obtained at the photoelectric conversion parts after removing the mask, and removing the semiconductor substrate and a buried insulating layer from the semiconductor layer after causing a support substrate to adhere to the front side of the semiconductor layer.08-01-2013
20130193313SOLID-STATE IMAGING DEVICE - A solid-state imaging device of one embodiment includes a light receiving section including of a plurality of pixels 08-01-2013
20120025061SOLID-STATE IMAGING DEVICE, DRIVING METHOD THEREOF AND ELECTRONIC APPARATUS - A solid-state imaging device includes: a semiconductor substrate including a light receiving surface which is divided according to pixels arranged in a matrix shape and is formed with a photoelectric converting section; an electrochromic film which is formed on the semiconductor substrate on a light incident path corresponding to the photoelectric converting section, in a portion of pixels selected from the pixels, and has light transmittance changing from a first transmittance to a second transmittance according to voltage applied thereto; a lower electrode which is formed below the electrochromic film; and an upper electrode which is formed above the electrochromic film.02-02-2012
20120025060SOLID-STATE IMAGING ELEMENT AND MANUFACTURING METHOD THEREOF, AND ELECTRONIC INFORMATION DEVICE - A color filter is formed using a simple manufacturing method, and bias application to a pixel separating electrode allows sensitivity in low illumination intensity to be improved. In a solid-state imaging element, in which a plurality of unit pixel sections are disposed two dimensionally on a side closer to a front surface of a semiconductor substrate or a semiconductor layer, each unit pixel section having a light receiving section for generating a signal charge by light irradiation, an adjoining unit pixel section is formed in the same color to allow for lesser alignment accuracy of the color filter. A pixel separating electrode is formed in the adjoining unit pixel section, and a signal charge is shared by bias application during low illumination intensity, thereby improving an effective photodiode area.02-02-2012
20120037788PASSIVE TYPE IMAGE SENSOR AND METHOD OF OPERATING THE SAME - A passive type image sensor and a method for operating the same. The passive type image sensor includes a photoelectric conversion section configured to receive light and integrate electric charges; a transfer section configured to transmit the integrated electric charges; an output section configured to received integrated electric charges from the transfer section and amplify and output the amplified electric charges; and an electric charge discharging section configured to discharge the electric charges flowing from the photoelectric conversion section to a common node through the transfer section while integrating the electric charge integration in the photoelectric conversion section.02-16-2012
20120056077DEVICE AND METHOD FOR THE ACQUISITION AND AUTOMATIC PROCESSING OF DATA OBTAINED FROM OPTICAL CODES - The device for the acquisition and automatic processing of data obtained from optical codes comprises a CMOS optical sensor; an analog processing unit connected to the optical sensor; an analog/digital conversion unit connected to the analog processing unit; a logic control unit connected to the CMOS optical sensor, the analog processing unit and the analog/digital conversion unit; and a data-processing unit connected to the logic control unit and the analog/digital conversion unit. The CMOS optical sensor and at least one of the analog processing, analog/digital conversion, logic control and data processing units are integrated in a single chip. The data processing unit processes the digital signals corresponding to the image acquired by the CMOS sensor and extracts the optically coded data.03-08-2012
20090256060PIXEL ARRAY WITH GLOBAL SHUTTER - A pixel comprises a photo-sensitive element for generating charges in response to incident radiation and a sense node. A transfer gate is positioned between the photo-sensitive element and the sense node for controlling transfer of charges to the sense node. A reset switch is connected to the sense node for resetting the sense node to a predetermined voltage. A first buffer amplifier has an input connected to the sense node. A sample stage is connected to the output of the first buffer amplifier and is operable to sample a value of the sense node. A second buffer amplifier has an input connected to the sample stage. Control circuitry operates the reset switch and causes the sample stage to sample the sense node while the photo-sensitive element is being exposed to radiation. An array of pixels is synchronously exposed to radiation. Sampled values for a first exposure period can be read while the photo-sensitive element is exposed for a second exposure period.10-15-2009
20130200252SOLID-STATE IMAGE PICKUP ELEMENT, METHOD OF MANUFACTURING THE SAME, AND IMAGE PICKUP APPARATUS INCLUDING THE SAME - A solid-state image pickup element 08-08-2013
20080258044Detection of Optical Radiation - The central idea of the present invention is that a readout result of an optical detection unit which is based on accumulating photocharges can be improved when the charge carriers accumulated on a photodiode capacitance can be transferred to a readout capacitance before being read out by a readout unit, and when the state of the readout capacitance can be read out in a non-destructive manner by the readout unit, so that a noise portion in the readout signal can be corrected by reading out the readout capacitance during charge accumulation and again reading out the readout capacitance after the end of charge accumulation. Additionally, it becomes possible by the transfer to the readout capacitance to vary the sensitivity of the optical detection device within broad limits and to record a sequence of successive light pulses, without having to reset a photodiode before recording every single light pulse.10-23-2008
20130099094SOLID-STATE IMAGING DEVICE, ELECTRONIC EQUIPMENT AND MANUFACTURING METHOD OF THE SOLID-STATE IMAGING DEVICE - A solid-state imaging device including, active elements configured to handle the charge captured in a photoreceiving region, an element isolation region configured to isolate regions of the active element, a first impurity region configured to surround the element isolation region, and a second impurity region including an impurity region lower in impurity concentration than the first impurity region, the second impurity region being provided between the first impurity region and active elements.04-25-2013
20120068051Method Of Driving An Image Sensor - In a method of driving an image sensor, incident light is converted into electric charges in a photoelectric conversion region during a first operation mode. At least one of collected electric charges and overflowed electric charges is accumulated in a floating diffusion region based on illuminance of the incident light. The collected electric charges indicate electric charges that are collected in the photoelectric conversion region. The overflowed electric charges indicate electric charges that have overflowed from the photoelectric conversion region.03-22-2012
20120068050MULTI PIXEL PHOTO DETECTOR ARRAY OF GEIGER MODE AVALANCHE PHOTODIODES - A multi-pixel photodetector array may include a semiconductor substrate having a back side and a front side, Geiger mode avalanche photodiodes (GM-APDs) on the semiconductor substrate, each including an anode contact, and a common cathode for the GM-APDs and having a first connection lead on the backside of the semiconductor substrate. The multi-pixel photodetector array may include a second connection lead, and a common anode on the front side of the semiconductor substrate and configured to couple in common the anode contacts of the GM-APDs to the second connection lead. Each GM-APD may be configured to generate, when a photon impinges thereon, a current pulse of different shape for discrimination by an external circuit connected to the common cathode and the common anode.03-22-2012
20120074299LOW CONSUMPTION MATRIX SENSOR - An image matrix sensor having a plurality of individual detection structures associated with respective pixels, each individual detection structure including a photodiode having at least one solar cell mode operating range, a first amplifier stage constantly supplied with power and receiving, as an input, a voltage dependent on the voltage of the photodiode which falls within said range; and a second amplifier stage linked to the output of the first amplifier stage and supplied with power in a different manner according to whether or not the first amplifier stage is read.03-29-2012
20130206964SOLID-STATE IMAGING APPARATUS WITH EACH PIXEL INCLUDING A PHOTOELECTRIC CONVERSION PORTION AND PLURAL HOLDING PORTIONS - A solid-state imaging apparatus including a plurality of pixels each including: a first holding portion for holding signal carriers from a photoelectric conversion portion; an amplifying portion for amplifying and reading a signal based on the signal carriers generated in the photoelectric conversion portion; and a carrier discharging control portion for discharging charge carriers in the photoelectric conversion portion to an OFD region, and having a carrier path between the photoelectric conversion portion and the first carrier holding portion, in which the solid-state imaging apparatus further includes a second carrier holding portion electrically connected with the first carrier portion in parallel through a first transfer unit, when viewed from an output node of the photoelectric conversion portion, thereby smoothing an movie imaging without causing discontinuous frame while suppressing generation of noise mixing into the charge carrier holding portion.08-15-2013
20130206965DRIVING METHOD FOR SOLID-STATE IMAGING APPARATUS, AND IMAGING SYSTEM - A driving method for a solid-state imaging apparatus including a plurality of pixels is provided. A potential of the electric charge accumulated in an accumulating portion is lower than a potential of a first transferring portion for connecting a photoelectric conversion element to the accumulating portion for accumulating an electric charge. The driving method includes: a first driving mode setting a start and an end of an operation of accumulating the electric charge in each of the plurality of pixels common for the plurality of pixels; and a second driving mode setting the start and the end of the operation of accumulating the electric charge in each of the plurality of pixels common for the pixels in each row.08-15-2013
20130206966METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE, SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS - Also provided is a method for manufacturing a photoelectric conversion device including: a first process where a plurality of pixel electrodes 08-15-2013
20120085889IMAGE PICKUP APPARATUS - An apparatus includes pixels each having a transistor that transfers a charge of a photoelectric conversion unit, an amplification unit that receives the transferred charge, a scanning unit that supplies, to the transistor, a conductive pulse, a non-conductive pulse, and an intermediate-level pulse having a peak value between the conductive pulse and the non-conductive pulse, a generating unit that generates an image signal using a signal based on a charge transferred in response to the conductive and intermediate-level pulses, and a control unit that changes at least one of a pulse width of the intermediate-level pulse and the peak value in accordance with information on the detected temperature. The conductive and intermediate-level pulses are supplied to the transistor during a light shielding period of the photoelectric conversion unit.04-12-2012
20120085888BACK-SIDE ILLUMINATED SOLID-STATE IMAGING DEVICE - A back-side illuminated solid-state imaging device includes a photodiode and MOS transistors at a semiconductor substrate. The MOS transistors are formed over the front surface of the semiconductor substrate. The photodiode responds to an incident light applied to the back surface opposite to the front surface of the semiconductor substrate. A charge storing portion, and a first and second transfer gates are formed over the main part of the photodiode and the front surface of the semiconductor substrate located above the vicinity of the main part so as to achieve the global shutter function. Since the irradiation light is incident on the photodiode from the back surface of the semiconductor substrate in back-side illuminated solid-state imaging device, the sensitivity of the photodiode is not reduced even when the first and second transfer gates, and the charge storing portion are formed to achieve the global shutter function.04-12-2012
20130206959BLACK LEVEL CORRECTION FOR IMAGING PIXELS - A technique for obtaining a corrected pixel value is disclosed. The technique includes measuring a first dark current of a dark calibration pixel of a pixel array and measuring a second dark current of an imaging pixel of the pixel array. A dark current ratio is calculated based on the first dark current and the second dark current. An image charge is acquired with the imaging pixel where the image charge is accumulated over a first time period. A charge is acquired with the dark calibration pixel where the charge is accumulated over a second time period. The second time period is approximately equal to the first time period divided by the dark current ratio. A corrected imaging pixel value is calculated using a first readout from the imaging pixel and a second readout from the dark calibration pixel.08-15-2013
20130206960PHOTO-SENSING PIXEL CIRCUIT AND IMAGE SENSOR - A photo-sensing pixel circuit including a photo-sensing part, a transfer transistor, a plurality of adjustment transistors, and an output circuit is provided. The photo-sensing part senses a light source and generates a corresponding number of electrons. The transfer transistor coupled to the photo-sensing part has a floating node and converts the electrons generated by the photo-sensing part into a voltage signal. The adjustment transistors have a first end and a second end, wherein the first end is coupled to a power supply, and the second end is coupled to the transfer transistor via the floating node. The output circuit coupled to the transfer transistor outputs a sensing signal according to the voltage signal, wherein the sensing signal is corresponding to the brightness of the light source. The adjustment transistors operate in at least two operation modes. Different numbers of the adjustment transistors are turned on in different operation modes.08-15-2013
20130206962IMAGING SYSTEMS WITH BACKSIDE ISOLATION TRENCHES - An image sensor such as a backside illumination image sensor may be provided with analog circuitry, digital circuitry, and an image pixel array on a semiconductor substrate. Trench isolation structures may separate the analog circuitry from the digital circuitry on the substrate. The trench isolation structures may be formed from dielectric-filled trenches in the substrate that isolate the portion of the substrate having the analog circuitry from the portion of the substrate having the digital circuitry. The trench isolation structures may prevent digital circuit operations such as switching operations from negatively affecting the performance of the analog circuitry. Additional trench isolation structures may be interposed between portions of the substrate on which bond pads are formed and other portions of the substrate to prevent capacitive coupling between the bond pad structures and the substrate, thereby enhancing the high frequency operations of the image sensor.08-15-2013
20130206963METHODS, SYSTEMS, AND DEVICES FOR MULTIBEAM COHERENT DETECTION AND SPECKLE MITIGATION - Methods, systems, and devices are provided that may facilitate multibeam coherent detection and/or speckle mitigation. For example, some embodiments provide for multiple simultaneous independent speckle realizations in light reflected from an actively illuminated target while also may simultaneously provide reference beams inherently aligned to each speckle. These tools and techniques may facilitate coherent detection of light returned from a target. In some cases, this may provide the basis for substantial speckle mitigation. With the addition of illumination phase or frequency modulation and/or intelligent algorithmic methods, some designs may utilize the multiple speckle returns to actively mitigate speckle noise, and can further be used to separately measure speckle phase to implement interferometric resolution surface tilt measurement and/or surface imaging. These tools and techniques may be utilized for other purposes related to multibeam coherent detection and/or speckle mitigation.08-15-2013