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250 - Radiant energy

250306000 - INSPECTION OF SOLIDS OR LIQUIDS BY CHARGED PARTICLES

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DocumentTitleDate
20110174972APPARATUS AND METHODS FOR CONTROLLING ELECTRON MICROSCOPE STAGES - Methods and apparatus for generating an image of a specimen with a microscope (e.g., TEM) are disclosed. In one aspect, the microscope may generally include a beam generator, a stage, a detector, and an image generator. A plurality of crystal parameters, which describe a plurality of properties of a crystal sample, are received. In a display associated with the microscope, an interactive control sphere based at least in part on the received crystal parameters and that is rotatable by a user to different sphere orientations is presented. The sphere includes a plurality of stage coordinates that correspond to a plurality of positions of the stage and a plurality of crystallographic pole coordinates that correspond to a plurality of polar orientations of the crystal sample. Movement of the sphere causes movement of the stage, wherein the stage coordinates move in conjunction with the crystallographic coordinates represented by pole positions so as to show a relationship between stage positions and the pole positions.07-21-2011
20130043387ABERRATION-CORRECTING DARK-FIELD ELECTRON MICROSCOPY - A transmission electron microscope includes an electron beam source to generate an electron beam. Beam optics are provided to converge the electron beam. An aberration corrector comprising either a foil or a set of concentric elements corrects the electron beam for at least a spherical aberration. A specimen holder is provided to hold a specimen in the path of the electron beam. A detector is used to detect the electron beam transmitted through the specimen. The transmission electron microscope may be configured to operate in a dark-field mode in which a zero beam of the electron beam is not detected. The microscope may also be capable of operating in an incoherent illumination mode.02-21-2013
20130043386IMAGE PROCESSING APPARATUS, AN IMAGE GENERATING METHOD, AND A SYSTEM - The method disclosed in this specification includes: acquiring a dark-field image produced by capturing an image of a sample with a scanning transmission electron microscope by detecting electrons scattered at angles between a first angle to the optical axis of the scanning transmission electron microscope and a second angle which is larger than the first angle; acquiring a bright-field image captured simultaneously with the dark-field image by detecting electrons scattered within a third angle which is smaller than the first angle; generating a reverse image by reversing lightness and darkness of the dark-field image; and generating a difference image each of whose pixels has a brightness value equal to the difference between the brightness of the corresponding pixel in the reverse image and the brightness of the corresponding pixel in the bright-field image.02-21-2013
20100090108Method and Apparatus for Producing Samples for Transmission Electron Microscopy - In the case of a method for producing samples for transmission electron microscopy, a sample is prepared from a substrate of a sample material. To this end, the sample material is irradiated by means of a laser beam along an irradiation trajectory in order to produce a weak path in the sample material. The irradiation is controlled such that the weak path crosses a further weak path, which is likewise preferably produced by laser irradiation, running in the sample material, at an acute angle in a crossing region. The substrate is broken along the weak paths. A sample is thereby produced which has a wedge-shaped sample section bounded by fracture surfaces and has in the region of a wedge tip at least one electron-transparent region.04-15-2010
20090194690Inspection Method And Inspection System Using Charged Particle Beam - An electron beam system includes a sample holder to hold a sample, electron optics to obtain an image of the sample, an electrode to control a charged state of the sample, a monitor to determine a range of voltage applied to the electrode, and a processing unit to obtain plural images of different charged states of the sample in accordance with a change of the applied to the electrode and to determine voltage from the voltage contrasts of the images.08-06-2009
20090194689METHOD AND SYSTEM FOR MEASURING PROPERTIES OF MICROSTRUCTURES AND NANOSTRUCTURES - A method is presented for characterizing properties of a specimen, such as a microstructure and a nanostructure. The method includes attaching a first end of the specimen to a first probe (08-06-2009
20090200464TEM WITH ABERRATION CORRECTOR AND PHASE PLATE - The invention relates to a TEM with a corrector (08-13-2009
20090218490APPARATUS AND METHOD OF SEMICONDUCTOR DEFECT INSPECTION - An object of the present invention is to provide an apparatus and a method of semiconductor defect inspection in which an optimal process condition can be determined without performing electrical evaluation. To achieve the object, the present invention includes a configuration in which the type of an extracted defect is identified with reference to a database that stores the types of defects obtained by inspecting a sample, a defect density according to each defect type is obtained for each region of the sample, and the defect density is displayed. Moreover, the present invention includes a configuration in which the type of an extracted defect is identified with reference to a database that stores the types of defects obtained by inspecting a sample, a defect density according to each defect type is determined for each production process of the sample, and the defect density is displayed on a display.09-03-2009
20130075605CONDUCTIVE ELEMENT FOR ELECTRICALLY COUPLING AN EUVL MASK TO A SUPPORTING CHUCK - A coupling module may include an upper portion that defines an aperture, mask contact elements, chuck contact elements and an intermediate element that is connected between the mask contact elements and the upper portion. A shape and a size of the aperture may correspond to a shape and size of a pattern transfer area of an extreme ultra violet (EUVL) mask. The coupling module may be shaped and sized so that once the mask contact elements contact the upper portion of the EUVL mask, the chuck contact elements contact a chuck that supports the mask. The coupling module may further provide at least one conductive path between the upper portion of the EUVL mask and the chuck when the EUVL mask is positioned on the chuck.03-28-2013
20080258056METHOD FOR STEM SAMPLE INSPECTION IN A CHARGED PARTICLE BEAM INSTRUMENT - A method for sample examination in a dual-beam FIB calculates a first angle as a function of second, third and fourth angles defined by the geometry of the FIB and the tilt of the specimen stage. A fifth angle is calculated as a function of the stated angles, where the fifth angle is the angle between the long axis of an excised sample and the projection of the axis of the probe shaft onto the X-Y plane. The specimen stage is rotated by the calculated fifth angle, followed by attachment to the probe tip and lift-out. The sample may then be positioned perpendicular to the axis of the FIB electron beam for STEM analysis by rotation of the probe shaft through the first angle.10-23-2008
20080258055CHARGED BEAM APPARATUS AND METHOD THAT PROVIDE CHARGED BEAM AERIAL DIMENSIONAL MAP - A charged beam apparatus, such as an electron microscopy apparatus, and a method for determining an aerial dimensional map of a charged beam within the charged beam apparatus, each use a test structure that includes a feature located upon a substrate. One of the feature and the substrate is conductive and the other of the feature and the structure is non conductive. The charged beam within the charged beam apparatus is scanned in a plurality of non-parallel linear directions with respect to the substrate and the feature to provide a corresponding plurality of current versus position response curves from which may be determined the aerial dimensional map of the charged beam within the charged beam apparatus.10-23-2008
20130134308SAMPLE OBSERVATION APPARATUS AND METHOD OF MARKING - If an indentation mark is put in the vicinity of a defect under constant conditions regardless of the film type of samples, surroundings of the mark become cracked or the mark may be too small to view, thus causing the problem of difficulty in viewing the mark or the defect. Another problem is that in a patterned wafer, an indentation mark is coincidentally put on a film not suited for marking. To solve such problems, an elemental analysis is conducted of a position to be marked and, on the basis of the analysis results, such indentation marking conditions as the pressing load, descending rate, and marking depth of an indenter are varied to perform marking suited for a film type. If the film type of the location to be marked cannot be concluded to be a registered film type, marking under wrong conditions is prevented by switching to manual setting. It is also possible to avoid putting marks on a material if the material is not suited for marking.05-30-2013
20100148064X-RAY DETECTOR FOR ELECTRON MICROSCOPE - Multiple detectors arranged in a ring within a specimen chamber provide a large solid angle of collection. The detectors preferably include a shutter and a cold shield that reduce ice formation on the detector. By providing detectors surrounding the sample, a large solid angle is provided for improved detection and x-rays are detected regardless of the direction of sample tilt.06-17-2010
20130037716SCANNING ELECTRON MICROSCOPE AND SAMPLE OBSERVATION METHOD - The present invention provides a contact hole observation technology for avoiding a situation in which it is difficult to observe a contact hole as a nonuniform charge is formed in the contact hole due to a tilted electron beam during a process for forming a preliminary charge on a sample. The present invention also provides a scanning electron microscope based on such a contact hole observation technology. During a preliminary charge process, an electron beam is allowed to become incident in a plurality of directions to perform a precharge, thereby reducing a region within the contact hole that is not irradiated with the electron beam. This reduces the number of secondary electrons that become lost on the wall surface of the contact hole, thereby making it possible to acquire information about the bottom of the contact hole. Further, the precharge is processed by dividing a precharge irradiation region into a plurality of ring-shaped regions concentric with an observation region and precharging each of the ring-shaped regions in a plurality of scanning directions.02-14-2013
20130037715CHARGED-PARTICLE MICROSCOPE PROVIDING DEPTH-RESOLVED IMAGERY - A method of examining a sample using a charged-particle microscope, comprising the following steps: 02-14-2013
20130037714Charged-Particle Microscopy Imaging Method - Charged-particle microscopy includes 02-14-2013
20130037713METHOD FOR PROCESSING SAMPLES HELD BY A NANOMANIPULATOR - A method for processing a sample in a charged-particle beam microscope. A sample is collected from a substrate and the sample is attached to the tip of a nanomanipulator. The sample is optionally oriented to optimize further processing. The nanomanipulator tip is brought into contact with a stabilizing support to minimize drift or vibration of the sample. The attached sample is then stabilized and available for preparation and analysis.02-14-2013
20130037712OPTICAL-CAVITY PHASE PLATE FOR TRANSMISSION ELECTRON MICROSCOPY - An optical phase plate system and method for enhancing phase contrast in electron beam imaging includes a transmission electron microscope (TEM) having a back focal plane; an optical cavity having a high internal surface reflectance, the center of the optical cavity located at the back focal plane of the TEM, the optical cavity having first and second ports arranged oppositely along a symmetrical axis of the optical cavity to admit an electron beam provided by the TEM through the first port to pass through and focus at the center of the optical cavity, and to exit through the second port, and wherein the optical cavity further has an optical port on an axis transverse to and intersecting the electron beam axis to admit a laser beam; a laser coupled to the optical cavity to provide a laser beam of a selected wavelength to enter the optical cavity through the optical port, wherein the laser beam is multiply reflected from the high internal surface reflectance to provide a high intensity standing wave optical phase plate focused at the back focal plane of the TEM to cause a modulation of the electron beam; and an image plane of the TEM placed opposite the second port of the optical cavity to receive the electron beam modulated by the high intensity standing wave optical phase plate.02-14-2013
20100116985LASER ATOM PROBE METHODS - A laser atom probe situates a counter electrode between a specimen mount and a detector, and provides a laser having its beam aligned to illuminate the specimen through the aperture of the counter electrode. The detector, specimen mount, and/or the counter electrode may be charged to some boost voltage and then be pulsed to bring the specimen to ionization. The timing of the laser pulses may be used to determine ion departure and arrival times allowing determination of the mass-to-charge ratios of the ions, thus their identities. Automated alignment methods are described wherein the laser is automatically directed to areas of interest.05-13-2010
20100116984CHARGED PARTICLE BEAM APPARATUS AND METHOD OF ADJUSTING CHARGED PARTICLE OPTICS - A charged particle beam apparatus which is able to adjust charged particle optics easily in a short time with a high degree of accuracy and a method of adjusting charged particle optics are provided. A charged particle beam apparatus 05-13-2010
20090173882Liquid Medium For Preventing Charge-Up in Electron Microscope and Method of Observing Sample Using The Same - An object of the present invention is to provide a medium; a specimen; a method for preparing the specimen; a method for observing the specimen; a sample cell; and an electron microscope capable of easily solving the problem of charge-up and further capable of observing a real shape or the like of a sample with a SEM, a TEM or the like. For the purpose of achieving the above-described object, the present invention uses an electrical conductivity-imparting liquid medium, for use in a microscope, which includes an ionic liquid as an essential component thereof and is impregnated into the entirety of a SEM or TEM sample or applied to the observation surface of a SEM or TEM sample to impart electrical conductivity at least to the observation surface of the sample. According to the present invention, the charge built up on the sample surface can be released simply by impregnating or coating the sample with the ionic liquid, and hence the problem of charge-up can be easily solved. Further, even when a sample impregnated or coated with the ionic liquid is placed under vacuum, the ionic liquid is not evaporated from the sample, and hence a biological sample can be observed as it is in an original shape.07-09-2009
20100072366METHOD FOR CORRECTING DISTORTIONS IN A PARTICLE-OPTICAL APPARATUS - The invention relates to a method for correcting distortions introduced by the projection system (03-25-2010
20100072365VARIABLE RATE SCANNING IN AN ELECTRON MICROSCOPE - A method for imaging a surface, including scanning a first region of the surface with a primary charged particle beam at a first scan rate so as to generate a first secondary charged particle beam from the first region, and scanning a second region of the surface with the primary charged particle beam at a second scan rate faster than the first scan rate so as to generate a second secondary charged particle beam from the second region. The method also includes receiving the first secondary charged particle beam and the second secondary charged particle beam at a detector configured to generate a signal in response to the beams, and forming an image of the first and the second regions in response to the signal.03-25-2010
20100072364Method for regulating scanning sample surface charge in continuous and leap-and-scan scanning mode imaging process - A method for regulating sample surface charge has been proposed in this invention. The processes of applying a charged particle beam to a first area and applying a flood energized beam gun with gaseous molecules to a second area are executed in the method when the sample is in both continuous and Leap & Scan movements. The second area is located at a predetermined distance from the first area behind or ahead of the first area being scanned with respect to the movement of the sample. Thus, the surface of the sample may be regulated.03-25-2010
20130032713ELECTRON DETECTOR INCLUDING ONE OR MORE INTIMATELY-COUPLED SCINTILLATOR-PHOTOMULTIPLIER COMBINATIONS, AND ELECTRON MICROSCOPE EMPLOYING SAME - An electron detector includes a plurality of assemblies, the plurality of assemblies including a first assembly having a first SiPM and a first scintillator made of a first scintillator material directly connected to an active light sensing surface of the first SiPM, and a second assembly having a second SiPM and a second scintillator made of a second scintillator material directly connected to an active light sensing surface of the second SiPM, wherein the first scintillator material and the second scintillator material are different than one another. Alternatively, an electron detector includes an assembly including an SiPM and a scintillator member having a front surface and a back surface, the scintillator member being a film of a scintillator material directly deposited on to an active light sensing surface of the SiPM.02-07-2013
20130032714ION BEAM APPARATUS AND ION-BEAM PROCESSING METHOD - There is provided an apparatus and a method capable of preparing a standardized probe without need for working skill of probe processing. According to the present invention, a probe shape generation process of detecting a probe shape based on the probe incoming current detected by a probe current detection unit, a probe tip coordinate extraction process of detecting a tip position of the probe from the probe shape, a probe contour line extraction process of generating a probe contour line obtained by approximating a contour of the probe from the tip position of the probe and the probe shape, a probe center line extraction process of generating a center line and a vertical line of the probe from the probe contour line, a processing pattern generation process of generating a processing pattern based on the probe tip position, the probe center line, the probe vertical line, and a preset shape and dimension of a probe acute part, and an ion beam termination process of performing, based on the processing pattern, termination of ion-beam processing are performed.02-07-2013
20130032712OVERLAY ALIGNMENT MARK AND METHOD OF DETECTING OVERLAY ALIGNMENT ERROR USING THE MARK - A method comprises providing a semiconductor substrate having a first layer and a second layer above the first layer. The first layer haw a plurality of first patterns, vias or contacts. The second layer has second patterns corresponding to the first patterns, vias or contacts. The second patterns have a plurality of in-plane offsets relative to the corresponding first patterns, vias or contacts. A scanning electron microscope is used to measure line edge roughness (LER) values of the second patterns. An overlay error is calculated between the first and second layers based on the measured LER values.02-07-2013
20100032566SUBSTRATE SURFACE INSPECTION METHOD AND INSPECTION APPARATUS - A substrate surface inspection method inspects for a defect on a substrate including a plurality of materials on a surface thereof. The inspection method comprises: irradiating the surface of the substrate with an electron beam, a landing energy of the electron beam set such that a contrast between at least two types of materials of the plurality of materials is within a predetermined range; detecting electrons generated by the substrate to acquire a surface image of the substrate, with a pattern formed thereon from the at least two types of materials eliminated or weakened; and detecting the defect from the acquired surface image by detecting as the defect an object image having a contrast by which the object image can be distinguished from a background image in the surface image. Defects present on the substrate surface can be detected easily and precisely by using a cell inspection.02-11-2010
20120205539Detector for Use in Charged-Particle Microscopy - A method of investigating a sample using a charged-particle microscope is disclosed. By directing an imaging beam of charged particles at a sample, a resulting flux of output radiation is detected from the sample. At least a portion of the output radiation is examined using a detector, the detector comprising a Solid State Photo-Multiplier. The Solid State Photo-Multiplier is biased so that its gain is matched to the magnitude of output radiation flux.08-16-2012
20100102224CHARGED PARTICLE BEAM APPARATUS - A charged particle beam apparatus for obtaining information of an uneven surface or a depression/protrusion of a sample by irradiating a charged particle beam to a sample having an uneven surface or a depression/protrusion at a plurality of focal positions, measuring signal emitted from the sample, and comparing profile waveforms corresponding to edge portions of the uneven surface.04-29-2010
20090261250PLASMONIC STRUCTURE LENS AND ITS APPLICATION FOR ONLINE INSPECTION - A surface plasmonic polariton lens is disclosed that has an optical plate having incident thereupon waves of electromagnetic radiation. The plate also has a thin metal film of a metal having a negative permittivity. There are slits in the thin film, the slits being of decreasing radial width, and decreasing radial separation at increasing radius and being for the transmission therethrough of diffracted waves of the electromagnetic radiation. There are rings between the slits, the rings being of decreasing radial width at increasing radius and being for the transmission therethrough of evanescent waves of the electromagnetic radiation. The diffracted waves and the evanescent waves form propagated waves. A probe with such a lens, and an inspection apparatus and method using the probe are also disclosed.10-22-2009
201001088824D IMAGING IN AN ULTRAFAST ELECTRON MICROSCOPE - The present invention relates to methods and systems for 4D ultrafast electron microscopy (UEM)—in situ imaging with ultrafast time resolution in TEM. Single electron imaging is used as a component of the 4D UEM technique to provide high spatial and temporal resolution unavailable using conventional techniques. Other embodiments of the present invention relate to methods and systems for convergent beam UEM, focusing the electron beams onto the specimen to measure structural characteristics in three dimensions as a function of time. Additionally, embodiments provide not only 4D imaging of specimens, but characterization of electron energy, performing time resolved electron energy loss spectroscopy (EELS).05-06-2010
20100108881SCANNING TRANSMISSION ELECTRON MICROSCOPE USING GAS AMPLIFICATION - A scanning transmission electron microscope operated with the sample in a high pressure environment. A preferred detector uses gas amplification by converting either scattered or unscattered transmitted electrons to secondary electrons for efficient gas amplification.05-06-2010
20100108883CHARACTERIZATION OF NANOSCALE STRUCTURES USING AN ULTRAFAST ELECTRON MICROSCOPE - The present invention relates to methods and systems for 4D ultrafast electron microscopy (UEM)—in situ imaging with ultrafast time resolution in TEM. Single electron imaging is used as a component of the 4D UEM technique to provide high spatial and temporal resolution unavailable using conventional techniques. Other embodiments of the present invention relate to methods and systems for convergent beam UEM, focusing the electron beams onto the specimen to measure structural characteristics in three dimensions as a function of time. Additionally, embodiments provide not only 4D imaging of specimens, but characterization of electron energy, performing time resolved electron energy loss spectroscopy (EELS).05-06-2010
20130026361PATTERN EVALUATION METHOD, DEVICE THEREFOR, AND ELECTRON BEAM DEVICE - An amount of pattern position displacement between observation images acquired by irradiating from two different directions is changed depending on beam deflection for moving an image acquisition position. In a pattern evaluation method that measures astigmatic difference or focus position displacement having a small amount of dose at a high speed using parallax caused by the tilted beam, a correction value obtained in advance by measurement is reflected in an amount of pattern position displacement between observation images obtained by irradiating from at least two different directions and generated in accordance with the amount of beam deflection for moving an image acquisition position. A processing unit calculates an amount of correction of an amount of pattern position displacement depending on beam deflection of a beam deflecting unit for moving an image acquisition position on the sample at a high speed.01-31-2013
20090134327Defect recognizing method, defect observing method, and charged particle beam apparatus - There are provided a detecting step of detecting secondary charged particles generated from an observation area of a sample when an electron beam or a focused ion beam is emitted onto the observation area under a certain irradiation condition; an image forming step of forming a plurality of observation images acquired by dividing the observation area and having an equal periodic pattern, from the secondary charged particles detected in the detecting step; and a defect recognizing step of recognizing a defect in the observation area from information on a difference acquired by comparing the plurality of observation images formed in the image forming step. Additionally, the detecting step, the image forming step, and the defect recognizing step are performed even when the electron beam or the focused ion beam is emitted onto the observation area under an irradiation condition different from the certain irradiation condition.05-28-2009
20130082174METHODS AND APPARATUS FOR CLASSIFICATION OF DEFECTS USING SURFACE HEIGHT ATTRIBUTES - One embodiment relates to a method of classifying a defect on a substrate surface. The method includes scanning a primary electron beam over a target region of the substrate surface causing secondary electrons to be emitted therefrom, wherein the target region includes the defect. The secondary electrons are detected from the target region using a plurality of at least two off-axis sensors so as to generate a plurality of image frames of the target region, each image frame of the target region including data from a different off-axis sensor. The plurality of image data frames are processed to generate a surface height map of the target region, and surface height attributes are determined for the defect. The surface height attributes for the defect are input into a defect classifier. Other embodiments, aspects and features are also disclosed.04-04-2013
20130082175METHOD AND PARTICLE BEAM DEVICE FOR PRODUCING AN IMAGE OF AN OBJECT - A system for producing an image of an object using a particle beam device is provided. A particle source is used to generate primary particles, in which the primary particles have a primary energy. The primary particles are delivered to an object, in which the primary particles form a particle beam. Interaction particles which are scattered back by the object in the direction of the particle source are detected with at least one energy-resolving detector. Detection signals, which are obtained through the detection, are evaluated in terms of an energy which the detected interaction particles have. The detection signals which stem from the detected interaction particles whose energy deviates by less than 500 eV from the primary energy are selected. An image of the object is produced, in which only the selected detection signals are used to produce the image.04-04-2013
20130087705METHOD FOR DETERMINING NUMBER OF LAYERS OF TWO-DIMENSIONAL THIN FILM ATOMIC STRUCTURE AND DEVICE FOR DETERMINING NUMBER OF LAYERS OF TWO-DIMENSIONAL THIN FILM ATOMIC STRUCTURE - Provided is a versatile method of determining the number of layers of a two-dimensional atomic layer thin film as compared with conventional methods. An electron beam is radiated to a two-dimensional thin film atomic structure having an unknown number of layers to determine the number of layers based on an intensity of reflected electrons or secondary electrons generated thereby. In particular, this method is effective for determining the number of layers of graphene.04-11-2013
20130087704GAS FIELD IONIZATION ION SOURCE, SCANNING CHARGED PARTICLE MICROSCOPE, OPTICAL AXIS ADJUSTMENT METHOD AND SPECIMEN OBSERVATION METHOD - A gas field ionization ion source (GFIS) is characterized in that the aperture diameter of the extraction electrode can be set to any of at least two different values or the distance from the apex of the emitter to the extraction electrode can be set to any of at least two different values. In addition, solid nitrogen is used for cooling. It may be possible to not only let divergently emitted ions go through the aperture of the extraction electrode but also, in behalf of differential pumping, reduce the diameter of the aperture. In addition, it may be possible to reduce the physical vibration of the cooling means. Consequently, it may be possible to provide a highly stable GFIS and a scanning charged particle microscope equipped with such a GFIS.04-11-2013
20120181426Scanning Electron Microscope and a Method for Imaging a Specimen Using the Same - (1) part or all of the number, coordinates and size/shape and imaging sequence of imaging points each for observation, the imaging position change method and imaging conditions can be calculated automatically from CAD data, (2) a combination of input information and output information for imaging recipe creation can be set arbitrarily, and (3) decision is made of imaging or processing at an arbitrary imaging point as to whether to be successful/unsuccessful and in case a failure is determined, a relief process can be conducted in which the imaging point or imaging sequence is changed.07-19-2012
20120181425Electron Probe Microanalyzer and Data Processing Method Implemented Therein - In an electron probe microanalyzer (EPMA) and a method of use thereof, even if plural sets of X-ray image data are obtained at different timings from regions between which a positional deviation occurs, processing for obtaining the correlation is performed precisely. The sets of X-ray image data are obtained from the same region of a sample using the EPMA at different timings and stored in memory along with sets of electron image data based on detection of secondary or backscattered electrons arising from the region. The sets of electron image data obtained at the different timings are compared, and the amount of positional deviation is calculated. An operation for extracting a region common to the regions respectively producing the sets of X-ray image data obtained at the different timings is performed on these sets of X-ray image data based on the calculated amount of positional deviation.07-19-2012
20090045336Scanning probe microscopy cantilever, corresponding manufacturing method, scanning probe microscope, and scanning method - The present invention provides a scanning probe microscope cantilever comprising a support portion, a lever portion extended from the support portion, and a needle projecting out of a first surface of the cantilever in the vicinity of a free end of the lever portion. From a second surface of the cantilever opposite the first surface, a bore extends through the needle to an aperture formed at a tip of the needle. To the tip of the needle, a substantially globular particle is attached. A method of scanning a sample surface comprises creating relative cantilever motion substantially toward the sample such that the particle experiences a contact force with the sample, illuminating a top surface of the cantilever with laser light such that a portion of the laser light passes through the hollow needle and is emitted from the aperture onto the particle, and detecting scattered light from the sample.02-19-2009
20100006755CHARGED PARTICLE BEAM ALIGNMENT METHOD AND CHARGED PARTICLE BEAM APPARATUS - An object of the present invention is to provide a charged particle beam apparatus and an alignment method of the charged particle beam apparatus, which make it possible to align an optical axis of a charged particle beam easily even when a state of the charged particle beam changes. The present invention comprises calculation means for calculating a deflection amount of an alignment deflector which performs an axis alignment for an objective lens, a plurality of calculation methods for calculating the deflection amount is memorized in the calculation means, and a selection means for selecting at least one of the calculation methods is provided.01-14-2010
20090321634Multi-beam ion/electron spectra-microscope - This invention is a multi-beam charged particle instrument that can simultaneously focus electrons and a variety of positive and negative ions, such as Gallium, Oxygen and Cesium ions, onto the same material target. In addition, the instrument has provision to simultaneously capture the spectrum of both secondary electrons and ions. The highly dispersive, high resolution mass spectrometer portion of the instrument is expected to detect and identify secondary ion species across the entire range of the periodic table, and also record a portion of their emitted energy spectrum. The electron energy spectrometer part of the instrument is designed to acquire the entire range of scattered electrons, from the low energy secondary electrons through to the elastic backscattered electrons.12-31-2009
20090114817APPARATUS AND METHOD FOR ENHANCING VOLTAGE CONTRAST OF A WAFER - A system for electrically testing a semiconductor wafer, the system including (a) at least one charged particle beam focus effecting component and (b) at least one detector adapted to collect charged particles scattered from the wafer; wherein the system is adapted to scan a first area of a sample by a de-focused charged particle beam so as to affect a charging of the first area, scan at least a portion of the first area by a focused charged particle beam and detect electrons scattered from the at least portion. The system scans the at least portion while the first area remains affected by the de-focused charged particle beam. A method for electrically testing a semiconductor wafer includes scanning a first area of a sample by a de-focused charged particle beam so as to affect a charging of the first area; and scanning at least a portion of the first area by a focused charged particle beam while detecting electrons scattered from the at least portion, the at least portion being scanned while the first area remains affected by charging introduced by the de-focused charged particle beam.05-07-2009
20090302217Hybrid Phase Plate - The invention relates to a hybrid phase plate for use in a TEM. The phase plate according to the invention resembles a Boersch phase plate in which a Zernike phase plate is mounted. As a result the phase plate according to the invention resembles a Boersch phase plate for electrons scattered to such an extent that they pass outside the central structure (12-10-2009
20110006208Method for Inspecting a Sample - The invention describes a method for inspecting samples in an electron microscope. A sample carrier 01-13-2011
20130056634Charged Particle Detector System Comprising a Conversion Electrode - The invention relates to a charged particle detector system comprising a conversion plate (03-07-2013
20120112067SCANNING ELECTRON MICROSCOPE SYSTEM AND METHOD FOR MEASURING DIMENSIONS OF PATTERNS FORMED ON SEMICONDUCTOR DEVICE BY USING THE SYSTEM - The present invention is for providing a scanning electron microscope system adapted to output contour information fitting in with the real pattern edge end of a sample, and is arranged to generate a local projection waveform by projecting the scanning electron microscope image in the tangential direction with respect to the pattern edge at each point of the pattern edge of the scanning electron microscope image, estimate the cross-sectional shape of the pattern transferred on the sample by applying the local projection waveform generated at each point to a library, which has previously been created, correlating the cross-sectional shape with the electron beam signal waveform, obtain position coordinate of the edge end fitting in with the cross-sectional shape, and output the contour of the pattern as a range of position coordinates.05-10-2012
20120112066Defect review apparatus and defect review method - A defect review apparatus includes: an electron scanning part which irradiates and scans an electron beam over an observation region on a surface of a sample; four electron detectors arranged around the optical axis of the electron beam with 90° intervals; and a signal processing unit which generates multiple pieces of image data of the observation region on the basis of detection signals from the electron detectors, the multiple pieces of image data respectively taken in different directions. When a pattern in the observation region is a line-and-space pattern, the defect inspection unit performs defect detection on the basis of a subtract between two pieces of the image data respectively taken in two predetermined directions with the optical axis of the electron beam in between.05-10-2012
20120112065APPARATUS AND METHOD FOR ESTIMATING CHANGE OF STATUS OF PARTICLE BEAMS - This invention provides an apparatus for estimating change of status of a plurality of particle beams, the apparatus includes a plurality of particle detectors and an estimating unit, wherein the one or the plurality of particle beams is projected to a substrate. The particle detectors detect the one or the plurality of particle beams reflected from the substrate to generate one or a plurality of detector signals. The estimating unit estimates change of the status of the one or the plurality of particle beams by executing a mathematical programming method according to the one or the plurality of detector signals. By such arrangement and monitoring method, the apparatus could estimate the drift of beams.05-10-2012
20120112064SAMPLE HOLDER, METHOD FOR USE OF THE SAMPLE HOLDER, AND CHARGED PARTICLE DEVICE - A sample holder for efficiently performing the processing or observation of a sample by means of charged particles while cooling. Particularly, disclosed is a sample holder whereby the processing or observation of a material which may be affected by the influence of heat damage can be performed in a state in which the material is cooled, and furthermore, the influence due to a sample processing method using charged particles can be reduced by cooling. The sample holder is provided with a sample stage capable of fixing a sample piece extracted from a sample by ion beam irradiation, and a rotation mechanism for rotating the sample stage in a desired direction, which can be attached to an ion beam device and a transmission electron microscope device, and which has a movable heat transfer material for thermally connecting the sample stage and a cooling source, and an isolation material for thermally isolating the sample stage and the heat transfer material from the outside. According to the sample holder, the processing or observation of a sample by means of charged particle beams can be performed while efficiently cooling.05-10-2012
20120112063METHOD AND APPARATUS FOR GENERATING THREE-DIMENSIONAL IMAGE DATA - A method and an apparatus for generating three-dimensional image data of a sample are disclosed. A first particle beam is provided for exposing a surface and a second particle beam is provided for generating an image of the surface are used. By moving the sample, it suffices if the first particle beam and/or the second particle beam are initially focused once on a surface of the sample that has already been exposed. Because all further exposed surfaces are always located in the same position, refocusing the first particle beam and/or the second particle beam is no longer required.05-10-2012
20120112062Environmental Cell for Charged Particle Beam System - An environmental cell for a charged particle beam system allows relative motion between the cell mounted on an X-Y stage and the optical axis of the focusing column, thereby eliminating the need for a sub-stage within the cell. A flexible cell configuration, such as a retractable lid, permits a variety of processes, including beam-induced and thermally-induced processes. Photon yield spectroscopy performed in a charged particle beam system and using gas cascade amplification of the photoelectrons allows analysis of material in the cell and monitoring of processing in the cell. Luminescence analysis can be also performed using a retractable minor.05-10-2012
20090266985Scanning Type Charged Particle Beam Microscope and an Image Processing Method Using the Same - Design data and sample characteristic information corresponding to individual areas on the design data are used to perform an image quality improvement operation to make appropriate improvements on image quality according to sample characteristic corresponding to the individual areas on the image, allowing a high speed area division on the image. Further, the use of a database that stores image information associated with the design data allows for an image quality improvement operation that automatically emphasizes portions of the image that greatly differ from past images of the similar design data.10-29-2009
20130062519ELECTRON MICROSCOPE, AND METHOD FOR ADJUSTNG OPTICAL AXIS OF ELECTRON MICROSCOPE - An electron microscope is provided that can automatically adjust the optical axis even in a state of deviation of the optical axis according to which the position of an electron beam on a fluorescent plate cannot be verified after replacement of an electron source. The microscope measures current of a fluorescent plate and determining whether the fluorescent plate is irradiated with an electron beam or not; without irradiation, controls a deflector to move the electron beam such that the fluorescent plate is irradiated with the electron beam; and, with irradiation, controls the deflector such that the current becomes a local maximum and a magnitude of luminance acquired from the image of the electron beam with which the fluorescent plate is irradiated becomes a local maximum.03-14-2013
20120223227APPARATUS AND METHODS FOR REAL-TIME THREE-DIMENSIONAL SEM IMAGING AND VIEWING OF SEMICONDUCTOR WAFERS - One embodiment relates to a method of real-time three-dimensional electron beam imaging of a substrate surface. A primary electron beam is scanned over the substrate surface causing electrons to be emitted therefrom. The emitted electrons are simultaneously detection using a plurality of at least two off-axis sensors so as to generate a plurality of image data frames, each image data frame being due to electrons emitted from the substrate surface at a different view angle. The plurality of image data frames are automatically processed to generate a three-dimensional representation of the substrate surface. Multiple views of the three-dimensional representation are then displayed. Other embodiments, aspects and features are also disclosed.09-06-2012
20120193530System and Method for Localization of Large Numbers of Fluorescent Markers in Biological Samples - A method and system for the imaging and localization of fluorescent markers such as fluorescent proteins or quantum dots within biological samples is disclosed. The use of recombinant genetics technology to insert “reporter” genes into many species is well established. In particular, green fluorescent proteins (GFPs) and their genetically-modified variants ranging from blue to yellow, are easily spliced into many genomes at the sites of genes of interest (GoIs), where the GFPs are expressed with no apparent effect on the functioning of the proteins of interest (PoIs) coded for by the GoIs. One goal of biologists is more precise localization of PoIs within cells. The invention is a method and system for enabling more rapid and precise PoI localization using charged particle beam-induced damage to GFPs. Multiple embodiments of systems for implementing the method are presented, along with an image processing method relatively immune to high statistical noise levels.08-02-2012
20090236521METHOD AND SYSTEM FOR ULTRAFAST PHOTOELECTRON MICROSCOPE - An ultrafast system (and methods) for characterizing one or more samples. The system includes a stage assembly, which has a sample to be characterized. The system has a laser source that is capable of emitting an optical pulse of less than 1 ps in duration. The system has a cathode coupled to the laser source. In a specific embodiment, the cathode is capable of emitting an electron pulse less than 1 ps in duration. The system has an electron lens assembly adapted to focus the electron pulse onto the sample disposed on the stage. The system has a detector adapted to capture one or more electrons passing through the sample. The one or more electrons passing through the sample is representative of the structure of the sample. The detector provides a signal (e.g., data signal) associated with the one or more electrons passing through the sample that represents the structure of the sample. The system has a processor coupled to the detector. The processor is adapted to process the data signal associated with the one or more electrons passing through the sample to output information associated with the structure of the sample. The system has an output device coupled to the processor. The output device is adapted to output the information associated with the structure of the sample.09-24-2009
20090236520 METHOD AND APPARATUS ALLOWING SIMULTANEOUS DIRECT OBSERVATION AND ELECTRONIC CAPTURE OF SCINTILLATION IMAGES IN AN ELECTRON MICROSCOPE - A method and apparatus allowing for simultaneous direct viewing and electronic capture of images in an electron microscope (TEM). For this, the usual opaque direct viewing plate in the TEM is replaced in form and in function by a two-sided direct viewing plate including at least one scintillator. This plate produces light emissions from both its upper and lower surfaces, which allows an electronic camera below the plate to be used simultaneously with direct human viewing from above the plate. The method and apparatus are also compatible with traditional permanent image recording units that are often desired in such microscopes.09-24-2009
20090236522Optical zoom system for a light scanning electron microscope - For a confocal scanning electron microscope (09-24-2009
20130068948METHOD OF PLANAR IMAGING ON SEMICONDUCTOR CHIPS USING FOCUSED ION BEAM - A method of planar imaging on semiconductor chips using focused ion beam is provided, comprising the steps of: (A)disposing at least a positioning symbol to designate a testing area thereon; (B)disposing a metal membrane on the testing area; (C)trimming the testing chip to form a first testing chip; (D)cutting a blind opening proximate the testing area on the first testing chip to form a second testing chip; (E)disposing and erecting the second testing chip on an inclinable platform; (F)rotating the erected second testing chip with the inclinable platform, thereby allowing ion beams from the FIB to emit into the opening in an angle of inclination; (G)emitting ion beams in the direction of the incident ray to form planar images of different depths parallel to the metal membrane on the testing area.03-21-2013
20130068947Pattern inspection apparatus and pattern inspection method - A pattern inspection apparatus includes: an irradiator irradiating a sample with an electron beam; an electron detector detecting an amount of electrons generated on the sample having a pattern formed thereon, by the irradiation of the electron beam; an image processor generating a SEM image of the pattern on the basis of the electron amount; and a controller acquiring defect position information on the pattern formed on the sample from an optical defect inspection device is provided. The controller specifies a defect candidate pattern from the SEM image and judges whether a defect in the defect candidate pattern is to be transferred onto a wafer. The controller determines a view field of the SEM image and specifies the defect candidate pattern from information on patterns in the SEM image in the view field.03-21-2013
20130214155CHARGED PARTICLE BEAM DEVICE WITH DYNAMIC FOCUS AND METHOD OF OPERATING THEREOF - A retarding field scanning electron microscope is described. The microscope includes a scanning deflection assembly configured for scanning an electron beam over a specimen, one or more controllers in communication with the scanning deflection assembly for controlling the electron beam scanning pattern, and a combined magnetic-electrostatic objective lens configured for focusing the electron beam including an electrostatic lens portion. The electrostatic lens portion includes a first electrode with a high potential bias, and a second electrode disposed between the first electrode and the specimen plane with a potential bias lower than the first electrode, wherein the second electrode is configured for providing a retarding field. The microscope further includes a voltage supply connected to the second electrode for biasing the second electrode and being in communication with the controllers, wherein the controllers synchronize a variation of the potential of the second electrode with the scanning pattern.08-22-2013
20130214156CHARGED PARTICLE DETECTOR - A charged particle beam system for imaging and processing targets is disclosed, comprising a charged particle column, a secondary particle detector, and a secondary particle detection grid assembly between the target and detector. In one embodiment, the grid assembly comprises a multiplicity of grids, each with a separate bias voltage, wherein the electric field between the target and the grids may be adjusted using the grid voltages to optimize the spatial distribution of secondary particles reaching the detector. Since detector lifetime is determined by the total dose accumulated at the area on the detector receiving the largest dose, detector lifetime can be increased by making the dose into the detector more spatially uniform. A single resistive grid assembly with a radial voltage gradient may replace the separate grids. A multiplicity of deflector electrodes may be located between the target and grid to enhance shaping of the electric field.08-22-2013
20130119250DEFECT INSPECTION METHOD, AND DEVICE THEREOF - A conventional pattern inspection, which compares an image to be inspected with a reference image and subjects the resulting difference value to the defect detection using the threshold of defect determination, has difficulty in highly-sensitive inspection. Because defects occur only in specific circuit pattern sections, false reports occur in the conventional pattern inspections which are not based on the position. Disclosed are a defect inspection method and a device thereof which perform a pattern inspection by acquiring a GP image in advance, designating a place to be inspected and a threshold map to the GP image on the GUI, setting the identification reference of the defects, next acquiring the image to be inspected, applying the identification reference to the image to be inspected, and identifying the defects with the identification reference, thereby enabling the highly-sensitive inspection.05-16-2013
20120235035Transmission Electron Microscope and Sample Observation Method - A transmission electron microscope includes an electron gun 09-20-2012
20130161511SAMPLE OBSERVING DEVICE AND SAMPLE OBSERVING METHOD - An electron beam inspection device observes a sample by irradiating the sample set on a stage with electron beams and detecting the electron beams from the sample. The electron beam inspection device has one electron column which irradiates the sample with the electron beams, and detects the electron beams from the sample. In this one electron column, a plurality of electron beam irradiation detecting systems are formed which each form electron beam paths in which the electron beams with which the sample is irradiated and the electron beams from the sample pass. The electron beam inspection device inspects the sample by simultaneously using a plurality of electron beam irradiation detecting systems and simultaneously irradiating the sample with the plurality of electron beams.06-27-2013
20110278452PATTERN CHECK DEVICE AND PATTERN CHECK METHOD - Provided is a pattern inspection apparatus including: a charge formation means which forms charge on a surface of a substrate (11-17-2011
20110278451Simultaneous Electron Detection - The invention provides multiple detectors that detect electrons that have passed through a sample. The detectors preferably detect electrons after the electrons have been passed through a prism that separates electrons according to their energies. Electrons in different energy ranges are then detected by different detectors, with preferably at least one of the detectors measuring the energy lost by the electrons as they pass through the sample. One embodiment of the invention provides EELS on core-loss electrons while simultaneously providing a bright-field STEM signal from low-loss electrons.11-17-2011
20120286158SCANNING ELECTRON MICROSCOPE AND INSPECTION METHOD USING SAME - Provided is a high-resolution scanning electron microscope with minimal aberration, and equipped with an electro-optical configuration that can form a tilted beam having wide-angle polarization and a desired angle, without interfering with an electromagnetic lens. In the scanning electron microscope, an electromagnetic deflector (11-15-2012
20100171036OPC MODEL CALIBRATION PROCESS - A method of calibrating a model of a lithographic process includes a plurality of test features each having different widths that vary from a resolvable feature width that is known to be resolvable by the lithographic process, to a width that is known not to be resolvable by the lithographic process. The test features and patterns are specifically designed to include features that approach or exceed the resolution of the lithographic process, and range from known resolvable patterns to patterns that are expected to fail to be resolved. The printed test patterns are inspected for printability and the extremum intensity values associated with neighboring printable and non-printable test patterns are used to determine a constant threshold value to be used in a resist process model.07-08-2010
20110284745Sample Holder, Inspection Apparatus, and Inspection Method - A sample holder, inspection apparatus, and an inspection method using the sample holder having a film including a first surface and a second surface. A liquid sample may be held on the first surface. The film is made of two or more layers. A primary beam irradiation device is installed in a reduced-pressure space. Consequently, the sample can be observed or inspected while maintaining the sample at the atmospheric pressure.11-24-2011
20110284743Method for Characterizing a Membrane in a Wet Condition By Positron Annihilation Spectrometer and Sample Holder Thereof - The present invention discloses a method for characterizing a membrane in a wet condition using a positron annihilation spectrometer and a sample holder thereof. Positron annihilation lifetime spectroscopy (PALS) has been know to be an invaluable tool for investigating local free-volume hole properties in various materials. Accompanying with the method and sample holder disclosed by the invention, PAS and PALS can measure the properties of various materials, such as free volume and layer structures both in the dry and wet states.11-24-2011
20090101815CANTILEVER FOR NEAR FIELD OPTICAL MICROSCOPES, PLASMON ENHANCED FLUORESCENCE MICROSCOPE EMPLOYING THE CANTILEVER, AND FLUORESCENCE DETECTING METHOD - A cantilever for near field optical microscopes is equipped with a probe in the vicinity of a free end thereof. The probe includes a thin film portion constituted by at least one layer of thin film that serves as the surface of the probe, and an inner bulk portion which is covered by the thin film portion. The outermost layer of the thin film portion is a thin dielectric film, and a metal portion is provided toward the interior of the probe from the thin dielectric film.04-23-2009
20110284744METHOD AND SYSTEM FOR 4D TOMOGRAPHY AND ULTRAFAST SCANNING ELECTRON MICROSCOPY - A 4D electron tomography system includes a stage having one or more degrees of freedom, an electron source, and electron optics operable to direct electron pulses to impinge on a sample supported on the stage. A pulse of the electron pulses impinges on the sample at a first time. The system also includes a laser system and optics operable to direct optical pulses to impinge on the sample. A pulse of the optical pulses impinges on the sample at a second time. The system further includes a detector operable to receive the electron pulses passing through the sample, a controller operable to independently modify an orientation of the stage and at least one of the first time or the second time, a memory operable to store sets of images, and a processor operable to form a 4D tomgraphic image set from the sets of images.11-24-2011
20100006754METHOD FOR TREATMENT OF SAMPLES FOR TRANSMISSION ELECTRONIC MICROSCOPES - A method for analyzing a sample for the manufacture of integrated circuits, e.g., dynamic random access memory device, commonly called, DRAMS. The method also provides an integrated chip including a thickness, a width, and a length. In a specific embodiment, the integrated chip has at least one elongated structure through a portion of the thickness, while being normal to the width and the length. In a specific embodiment, the elongated structure has a structure width and a structure length that extends through a vertical portion of the thickness. The method includes removing a slice of the integrated circuit chip from a portion of the thickness in a directional manner normal to the structure length. In a specific embodiment, the slice is provided through an entirety of the one elongated structure along the structure length to cause a portion of a thickness of the slice providing the elongated structure to be of a substantially uniform sample thickness. The method also includes capturing one or more images through a portion of the slice using a transmission electron01-14-2010
20090090863SAMPLE SURFACE OBSERVATION METHOD - A surface of a sample is observed by acquiring an image of the surface of the sample. An electron beam I irradiated onto the surface of the sample in which wiring including an insulation material and an electrically conductive material is formed. Electrons that acquired structure information regarding a structure of the surface of the sample are detected. An image of the surface of the sample is acquired by a result of the detection of electrons. The surface of the sample is observed using the acquired image of the surface of the sample. The electron beam is irradiated onto the surface of the sample in a state where a brightness of the insulation material and a brightness of the electrically conductive material in the image of the surface of the sample are set equal to each other.04-09-2009
20110291009SEMICONDUCTOR INSPECTION METHOD AND DEVICE THAT CONSIDER THE EFFECTS OF ELECTRON BEAMS - Disclosed is a device capable of probing with minimal effect from electron beams. Rough probing is made possible using a lower magnification than the magnification usually viewed. When target contact of semiconductor is detected, measurement position is set in the center of picture usually to move probe without moving stage. With the miniaturization, contact can be confirmed only at high magnification, although probe can be confirmed at low magnification on the contrary but it is necessary to display it in real time. Static image obtained at high magnification once is combined with image obtained at low magnification in real time from target contact required for probing and characteristic of probe to be displayed, so that probing at low magnification can be realized to reduce the effects of electron beams and obtain accurate electrical characteristics.12-01-2011
20110291008ELECTRON MICROSCOPE SPECIMEN AND METHOD FOR PREPARING THE SAME - A method for preparing an electron microscope specimen is provided. The method includes providing a wafer sample with an analysis region disposed thereon. A dicing process is performed to cut a sample piece from the wafer sample. The sample piece includes a target pillar structure wherein the analysis region is located on a top portion of the target pillar structure. A thinning process is performed to thin the top portion of the target pillar structure. The invention further provides an electron microscope specimen and a method of forming a 3D image.12-01-2011
20110291007Movable Detector for Charged Particle Beam Inspection or Review - The present invention generally relates to a detection unit of a charged particle imaging system. More particularly, portion of the detection unit can move into or out of the detection system as imaging condition required. With the assistance of a Wein filter (also known as an E×B charged particle analyzer) and a movable detector design, the present invention provides a stereo imaging system that suitable for both low current, high resolution mode and high current, high throughput mode. Merely by way of example, the invention has been applied to a scanning electron beam inspection system. But it would be recognized that the invention could apply to other system using charged particle beam as an observation tool.12-01-2011
20090032706Fast-Scanning SPM and Method of Operating Same - A method and apparatus are provided that have the capability of rapidly scanning a large sample of arbitrary characteristics under force control feedback so has to obtain a high resolution image. The method includes generating relative scanning movement between a probe of the SPM and a sample to scan the probe through a scan range of at least 4 microns at a rate of at least 30 lines/sec and controlling probe-sample interaction with a force control slew rate of at least 1 mm/sec. A preferred SPM capable of achieving these results has a force controller having a force control bandwidth of at least closed loop bandwidth of at least 10 kHz.02-05-2009
20090314938CHARGED PARTICLE BEAM APPARATUS AND DIMENSION MEASURING METHOD - There is provided a charged particle beam apparatus which allows implementation of a high-reliability and high-accuracy dimension measurement even if height differences exist on the surface of a sample. The charged particle beam apparatus includes the following configuration components: An acquisition unit for acquiring a plurality of SEM images whose focus widths are varied in correspondence with the focal depths, a determination unit for determining, from the plurality of SEM images acquired, a SEM image for which the image sharpness degree of the partial domain including a dimension-measuring domain becomes the maximum value, and a measurement unit for measuring the dimension of the predetermined domain from the SEM image whose image sharpness degree is the maximum value.12-24-2009
20090314937Method and Device For Producing an Image - The invention relates to a method and to a device (12-24-2009
20120097849ION BEAM STABILIZATION - Ion microscope methods and systems are disclosed. In general, the systems and methods provide high ion beam stability.04-26-2012
20120097848SCANNING INCREMENTAL FOCUS MICROSCOPY - Method and apparatus are provided for generating an enhanced image of an object. The method includes obtaining images of an area of an object generated using a probe of having a probe size greater than or equal to a minimum probe area size. An enhanced image of the area of the object is generated by accurately computing the emission intensities emitted from pixel areas smaller than the minimum probe size and within the area of the object. This is repeated for other areas of the object to form other enhanced images. The enhanced images are combined to form an accurate enhanced image of the object.04-26-2012
20100038534METHOD OF GENERATING PARTICLE BEAM IMAGES USING A PARTICLE BEAM APPARATUS - A representation of a particle beam image is generated by acquiring plural data sets using a particle beam apparatus. Each data set represents secondary particle intensities from a region of an object. The secondary particle intensities are acquired for the different data sets with different parameter adjustments of the particle beam apparatus. From the plural acquired data sets image data are generated using a tone-mapping method. The image data are represented at an output medium.02-18-2010
20100032564Particle Detection and Applications in Security and Portal Monitoring - Techniques, apparatus and systems for detecting particles such as muons. In one implementation, a monitoring system has a cosmic ray-produced charged particle tracker with a plurality of drift cells. The drift cells, which can be for example aluminum drift tubes, can be arranged at least above and below a volume to be scanned to thereby track incoming and outgoing charged particles, such as cosmic ray-produced muons, whilst also detecting gamma rays. The system can selectively detect devices or materials, such as iron, lead, gold and/or tungsten, occupying the volume from multiple scattering of the charged particles passing through the volume and can also detect any radioactive sources occupying the volume from gamma rays emitted therefrom. If necessary, the drift tubes can be sealed to eliminate the need for a gas handling system. The system can be employed to inspect occupied vehicles at border crossings for nuclear threat objects.02-11-2010
20090283676EXTENDED ELECTRON TOMOGRAPHY - A method for improving image resolution of a three dimensional structure of at least one molecule conformation includes: determining a three dimensional structure of at least one conformation of a molecule in a sample from a first data set obtained from a series of 2D measurements of different geometrical projections of the molecule at a low electron beam dose in an electron microscope; producing a second data set including calculated two dimensional projections of the determined three dimensional structure of the at least one conformation of the same molecule; correlating data from a third data set obtained from at least one measurement of the same molecule using a higher electron beam dose with the second data set; and using the correlated data to improve the resolution of the three dimensional structure of the at least one conformation of the molecule by increasing the first data set with the correlated data and re-determining a three dimensional structure.11-19-2009
20090189075INSPECTION METHOD AND INSPECTION SYSTEM USING CHARGED PARTICLE BEAM - Secondary electrons and back scattered electrons generated by irradiating a wafer to be inspected such as a semiconductor wafer with a charged particle beam are detected by a detector. A signal proportional to the number of detected electrons is generated, and an inspection image is formed on the basis of the signal. On the other hand, in consideration of a current value and irradiation energy of a charged particle beam, an electric field on the surface of the inspection wafer, emission efficiency of the secondary electrons and back scattered electrons, and the like, an electric resistance and an electric capacitance are determined so as to coincide with those in the inspection image. In a state where a difference between a resistance value in a normal portion and a resistance value in a defective portion is sufficiently increased by using the charging generated by the irradiation of electron beams, an inspection is conducted to thereby detect a defect.07-30-2009
20090152461Hole Inspection Apparatus and Hole Inspection Method using the Same - Disclosed herein is an apparatus and method for inspecting the via holes of a semiconductor device using electron beams. The apparatus includes electron beam irradiation means, a current measuring means, and a current measuring means and data processing means. The electron beam irradiation means radiate respective electron beams to inspect a plurality of inspection target holes. The current measuring means measures current, which is generated by irradiating the electron beams, radiated from the electron beam irradiation means, through a conductive layer located under the holes, or through the conductive layer and a separate detector. The data processing means processes data acquired through the measurement of the current measuring means.06-18-2009
20090121132Material processing system and method - A material processing system for processing a work piece is provided. The material processing is effected by supplying a reactive gas and energetic radiation for activation of the reactive gas to a surrounding of a location of the work piece to be processed. The radiation is preferably provided by an electron microscope. An objective lens of the electron microscope is preferably disposed between a detector of the electron microscope and the work piece. A gas supply arrangement of the material processing system comprises a valve disposed spaced apart from the processing location, a gas volume between the valve and a location of emergence of the reaction gas being small. The gas supply arrangement further comprises a temperature-adjusted, especially cooled reservoir for accommodating a starting material for the reactive gas.05-14-2009
20080237461Autofocus method in a scanning electron microscope - In an autofocus method, an electron beam is scanned onto a subject through a condensing member. A setting condition of the condensing member is changed within a first range. An image evaluation value is measured using a secondary electron current from the subject according to the setting condition within the first range. A second range adjacent to the first range and including the setting condition corresponding to the first maximum is set when a first maximum of the image evaluation value is not a peak value. The setting condition is changed within the second range. An image evaluation value is measured using a secondary electron current according to the setting condition within the second range. The condensing member is set with the setting condition corresponding to a second maximum of the image evaluation value when the second maximum value is the peak value.10-02-2008
20100123077PASSIVE PIXEL DIRECT DETECTION SENSOR - A simplification of the charge-collection pixel of an imaging detector for high-energy electrons is disclosed, incorporating removal of the buffer amplifier. While sacrificing speed and noise performance of the readout somewhat and therefore appearing counter-intuitive, this configuration has the potential to significantly reduce the susceptibility of the pixel to radiation damage.05-20-2010
20090309023ELECTRON SPECTROSCOPY - The present invention provides an electron spectroscopy apparatus (12-17-2009
20090166536Sample Holder, Method for Observation and Inspection, and Apparatus for Observation and Inspection - A sample holder used in SEM (scanning electron microscopy) or TEM (transmission electron microscopy) permitting observation and inspection at higher resolution. The holder has a frame-like member provided with an opening that is covered with a film. The film has a first surface on which a sample is held. The thickness D of the film and the length L of the portion of the film providing a cover over the opening in the frame-like member satisfy a relationship given by L/D <200,000.07-02-2009
20090206254Composite charged particle beam apparatus, method of processing a sample and method of preparing a sample for a transmission electron microscope using the same - An apparatus is provided that precisely conduct ion beam etching to a sample having the properties of which easily change by electron beam irradiation with no loss of ease of operation and throughput. An apparatus includes an ion beam lens barrel and an electron beam lens barrel, which can observe or measure the conditions of a sample with an electron beam in the process of etching with an ion beam, wherein first, an observation image is obtained that includes the entire process area formed by secondary signals generated by an electron beam, secondly, an irradiation permit area and an irradiation inhibit area are defined in the observation image, and thirdly, electron beam irradiation is restricted only to the irradiation permit area.08-20-2009
20090206253SUBSTRATE INSPECTION METHOD, SUBSTRATE INSPECTION APPARATUS AND STORAGE MEDIUM - In a substrate inspection method, it is inspected whether the metal electrode is electrically connected to the conductive film by radiating electron beams onto a surface of the substrate to detect the number of secondary electrons emitted therefrom. The method includes placing the substrate onto a mounting table; inspecting the metal electrode by radiating electron beams onto an area of the substrate including the metal electrode at a first acceleration voltage and detecting secondary electrons emitted from the metal electrode; and radiating electron beams onto an area of the substrate not including the metal electrode at a second acceleration voltage. The second acceleration voltage is set such that a difference between the number of electrons entering the insulation film and the number of secondary electrons emitted from the insulation film is smaller at the second acceleration voltage than at the first acceleration voltage.08-20-2009
20090206252Defect inspection method and its system - A method for enabling management of fatal defects of semiconductor integrated patterns easily, the method enables storing of design data of each pattern designed by a semiconductor integrated circuit designer, as well as storing of design intent data having pattern importance levels ranked according to their design intents respectively. The method also enables anticipating of defects to be generated systematically due to the characteristics of the subject exposure system, etc. while each designed circuit pattern is exposed and delineated onto a wafer in a simulation carried out beforehand and storing those defects as hot spot information. Furthermore, the method also enables combining of the design intent data with hot spot information to limit inspection spots that might include systematic defects at high possibility with respect to the characteristics of the object semiconductor integrated circuit and shorten the defect inspection time significantly.08-20-2009
20090206251OPTICAL MICROSCOPY WITH PHOTOTRANSFORMABLE OPTICAL LABELS - First activation radiation is provided to a sample that includes phototransformable optical labels (“PTOLs”) to activate a first subset of the PTOLs in the sample. First excitation radiation is provided to the first subset of PTOLs in the sample to excite at least some of the activated PTOLs, and radiation emitted from activated and excited PTOLs within the first subset of PTOLs is detecting with imaging optics. The first activation radiation is controlled such that the mean volume per activated PTOL in the first subset is greater than or approximately equal to a diffraction-limited resolution volume (“DLRV”) of the imaging optics.08-20-2009
20090272901Semiconductor substrate, substrate inspection method, semiconductor device manufacturing method, and inspection apparatus - A semiconductor substrate inspection method includes: generating a charged particle beam, and irradiating the charged particle beam to a semiconductor substrate in which contact wiring lines are formed on a surface thereof, the contact wiring lines of the semiconductor substrate being designed to alternately repeat in a plane view so that one of the adjacent contact wiring lines is grounded to the semiconductor substrate and the other of the adjacent contact wiring lines is insulated from the semiconductor substrate; detecting at least one of a secondary charged particle, a reflected charged particle and a back scattering charged particle generated from the surface of the semiconductor substrate to acquire a signal; generating an inspection image with the signal, the inspection image showing a state of the surface of the semiconductor substrate; and judging whether the semiconductor substrate is good or bad from a difference of brightness in the inspection image obtained from the surfaces of the adjacent contact wiring lines.11-05-2009
20090272899Method for Detecting Information of an Electric Potential on a Sample and Charged Particle Beam Apparatus - An object of the present invention is to provide a method and apparatus for measuring a potential on a surface of a sample using a charged particle beam while restraining a change in the potential on the sample induced by the charged particle beam application, or detecting a compensation value for a change in a condition for the apparatus caused by the sample being electrically charged. In order to achieve the above object, the present invention provides a method and apparatus for applying a voltage to a sample so that a charged particle beam does not reach the sample (hereinafter, this may be referred to as “mirror state”) in a state in which the charged particle beam is applied toward the sample, and detecting information relating to a potential on the sample using signals obtained by that voltage application.11-05-2009
20110139978CHARGED PARTICLE BEAM DEVICE, METHOD OF OPERATING A CHARGED PARTICLE BEAM DEVICE - A charged particle beam device is provided, including a primary beam source for generating a primary charged particle beam, an objective lens for focusing the primary charged particle beam onto a specimen, and an achromatic beam separator adapted to separate the primary charged particle beam from a secondary charged particle beam originating from the specimen. The achromatic beam separator is adapted to separate the primary charged particle beam and the secondary charged particle beam earliest practicable after generation of the secondary charged particle beam.06-16-2011
20110139979ISOTOPE ION MICROSCOPE METHODS AND SYSTEMS - Ion microscope methods and systems are disclosed. In general, the systems and methods involve relatively light isotopes, minority isotopes or both. In some embodiments, He-3 is used.06-16-2011
20110139980CHARGED PARTICLE BEAM APPARATUS AND GEOMETRICAL ABERRATION MEASUREMENT METHOD THEREFORE - Disclosed is a scanning charged particle microscope provided with an aberration measuring means that measures high-order geometrical aberration at high precision and high speed. An image obtained by a single-hole aperture and an image obtained by a multiple-hole aperture arranged in a region larger than that for the single-hole aperture are deconvoluted, an aberration quantity is determined based on the profiles of beams tilted in a plurality of directions and the obtained quantity is fed back to an aberration corrector.06-16-2011
20110139981METHOD FOR CONTROLLING CHARGING OF SAMPLE AND SCANNING ELECTRON MICROSCOPE - An object of the present invention is to provide a scanning electron microscope aiming at making it possible to control the quantity of electrons generated by collision of electrons emitted from a sample with other members, and a sample charging control method using the control of electron quantity. To achieve the object, a scanning electron microscope including a plurality of apertures through which an electron beam can pass and a mechanism for switching the apertures for the electron beam, and a method for controlling sample charging by switching the apertures are proposed. The plurality of apertures are at least two apertures. Portions respectively having different secondary electron emission efficiencies are provided on peripheral portions of the at least two apertures on a side opposed to the sample. The quantity of electrons generated by collision of electrons emitted from the sample can be controlled by switching the apertures.06-16-2011
20110139982METHOD FOR MEASURING SAMPLE AND MEASUREMENT DEVICE - An object of the present invention is to provide a method that can properly carry out the evaluation of a displacement and an overlapping area between first and second patterns formed through double patterning and a device therefor.06-16-2011
20110139983CHARGED CORPUSCULAR PARTICLE BEAM IRRADIATING METHOD, AND CHARGED CORPUSCULAR PARTICLE BEAM APPARATUS - According to a charged corpuscular particle beam irradiating method of this invention, a focusing element (06-16-2011
20090283677Section image acquiring method using combined charge particle beam apparatus and combined charge particle beam apparatus - There is constructed a constitution of including a mark image taking step of taking a reference mark image by subjecting a region other than an observation object section to EB scanning, a drift amount calculating step of calculating a current SEM drift amount with regard to a predetermined time point by comparing the taken reference mark image with a reference mark reference image, and an offset amount calculating step of calculating an offset amount of a current observation object section with regard to the predetermined time point prior to a section image taking step and taking a section image by correcting an EB scanning region at the predetermined time point based on the SEM drift amount and the offset amount at the section image taking step.11-19-2009
20080210865Pattern Measuring Method and Electron Microscope - An object of the present invention is to provide a pattern measuring method and an electron microscope that achieve truly high measurement throughput by achieving both precise location of a measurement target position and high-speed movement of the scanning position of an electron beam to the measurement target position. In order to attain the object described above, according to an aspect of the present invention, there is provided a pattern measuring method and an apparatus that move the scanning position of an electron beam based on coordinate information about a first pattern, which is a target to be measured with the electron beam, move the scanning position of the electron beam to a region comprising a second pattern, the relative distance of which from the first pattern is previously registered, in a case where detection of the first pattern at the point of arrival fails, and move the scanning position of the electron beam based on detection of the second pattern and information about the relative distance.09-04-2008
20090242758MULTISTAGE GAS CASCADE AMPLIFIER - A novel detector for a charged particle beam system which includes multiple gas amplification stages. The stages are typically defined by conductors to which voltage are applied relative to the sample or to a previous stage. By creating cascades of secondary electrons in multiple stages, the gain can be increased without causing dielectric breakdown of the gas.10-01-2009
20090272900Pattern Invariant Focusing of a Charged Particle Beam - A method for focusing a scanning microscope, including scanning a primary charged particle beam across first sites of a reference die of a wafer, detecting a secondary beam emitted from the sites, and computing first focus scores for the sites based on the secondary beam. The method includes scanning the primary beam across second sites of a given die of the wafer while modulating a focal depth of the primary beam, the reference die and the given die having congruent layouts, the second sites corresponding vectorially in location with the first sites, and detecting the secondary beam emitted from the second sites in response to the primary beam. The method also includes computing second focus scores for the second sites based on the detected secondary beam emitted therefrom, and determining an exact focus of the primary beam for the second sites using the first and the second focus scores.11-05-2009
20130099114DETECTOR FOR USE IN A CHARGED PARTICLE APPARATUS - A detector with a Silicon Diode and an amplifier, and a feedback element in the form of, for example, a resistor or a diode, switchably connected to the output of the amplifier. When the feedback element is selected via a switch, the detector operates in a Current Measurement Mode for determining electron current, and when the element is not selected the detector operates in its well-known Pulse Height Measurement Mode for determining the energy of X-ray quanta.04-25-2013
20130099115MICROFABRICATED HIGH-BANDPASS FOUCAULT APERTURE FOR ELECTRON MICROSCOPY - A variant of the Foucault (knife-edge) aperture is disclosed that is designed to provide single-sideband (SSB) contrast at low spatial frequencies but retain conventional double-sideband (DSB) contrast at high spatial frequencies in transmission electron microscopy. The aperture includes a plate with an inner open area, a support extending from the plate at an edge of the open area, a half-circle feature mounted on the support and located at the center of the aperture open area. The radius of the half-circle portion of reciprocal space that is blocked by the aperture can be varied to suit the needs of electron microscopy investigation. The aperture is fabricated from conductive material which is preferably non-oxidizing, such as gold, for example.04-25-2013
20110204224Multi-column electron beam lithography apparatus and electron beam trajectory adjustment method for the same - A multi-column electron beam lithography apparatus includes multiple columns, each including a mask having several aperture patterns; a selective deflector to deflect an electron beam to select an aperture pattern; a bending back deflector to bend the beam passed through the pattern back to the column optical axis; and an electron beam trajectory adjustment unit to adjust deflection efficiencies of the deflectors without the mask installed to allow the beam deflected toward any positions in a deflection region to be bent back and applied to the same position on a sample, and to adjust the deflection efficiency of the selective deflector with the mask installed to allow the beam to be deflected toward any pattern of the mask, while maintaining a relationship between the deflection efficiencies.08-25-2011
20110266439Method of Using a Direct Electron Detector for a TEM - A method of using a direct electron detector in a TEM, in which an image with a high intensity peak, such as a diffractogram or an EELS spectrum, is imaged on said detector. As known the high intensity peak may damage the detector. To avoid this damage, the centre of the image is moved, as a result of which not one position of the detector is exposed to the high intensity, but the high intensity is smeared over the detector, displacing the high intensity peak before damage results.11-03-2011
20100102225Charged particle beam inspection apparatus and inspection method using charged particle beam - A charged particle beam inspection apparatus includes: an electron gun emitting an electron beam; first and second condenser lenses used to focus the electron beam; a beam control panel disposed between the first and second condenser lenses; and a control unit performing stabilizing processing in which excitation currents respectively supplied to the first condenser lens and the second condenser lens are set to have predetermined values, thereby the current amount of the electron beam passing through an opening of the beam control panel is regulated so that the electron beam to be emitted onto the sample has a larger current amount than that at a measurement, and then the electron beam is emitted onto the sample for a predetermined time period. After the stabilizing processing, the control unit sets the values of the excitation currents back to values for the measurement in order to measure dimensions of the sample, the excitation currents respectively supplied to the first and second condenser lenses.04-29-2010
20100102223Method and device for examining a surface of an object - A method for treating a surface of an object and a device suitable in particular for performing this method provide for examining the surface of the object with the aid of a particle beam to counteract the charge buildup on the object. A gas is supplied to convey the charge away from the surface and/or to neutralize it.04-29-2010
20110198497Method for producing a representation of an object by means of a particle beam, as well as a particle beam device for carrying out the method - A method for producing a representation of an object using a particle beam, as well as a particle beam device for carrying out the method are disclosed. The system described herein is based on the object of specifying the method and the particle beam device for producing a representation of an object such that images which are produced, in particular including FFT images, are as free as possible of artifacts which are not caused by the object to be examined. This is achieved in particular in that pixel lives, line flyback times and pixel pause times are varied in raster patterns.08-18-2011
20080237460METHOD FOR MASKLESS PARTICLE-BEAM EXPOSURE - For maskless irradiating a target with a beam of energetic electrically charged particles using a pattern definition means with a plurality of apertures and imaging the apertures in the pattern definition means onto a target which moves (v) relative to the pattern definition means laterally to the axis, the location of the image is moved along with the target, for a pixel exposure period within which a distance of relative movement of the target is covered which is at least a multiple of the width (w) of the aperture images as measured on the target, and after said pixel exposure period the location of the beam image is changed, which change of location generally compensates the overall movement of the location of the beam image.10-02-2008
20120032078Backscatter Reduction in Thin Electron Detectors - In a direct electron detector, backscattering of electrons into the detector volume from below the sensor is prevented. In some embodiments, an empty space is maintained below the sensor. In other embodiments, a structure below the sensor includes geometry, such as multiple high aspects ratio channels, either extending to or from the sensor to trap electrons, or a structure of angled surfaces to deflect the electrons that pass through the sensor.02-09-2012
20080283746MICRO-SAMPLE PROCESSING METHOD, OBSERVATION METHOD AND APPARATUS - As sample sizes have decreased to microscopic levels, it has become desirable to establish a method for thin film processing and observation with a high level of positional accuracy, especially for materials which are vulnerable to electron beam irradiation. The technological problem is to judge a point at which to end FIB processing and perform control so that the portion to be observed ends up in a central portion of the thin film. The present invention enables display of structure in cross-section by setting a strip-like processing region in an inclined portion of a sample cross-section and enlarging the display of the strip-like processing region on a processing monitor in a short-side direction. It is then possible to check the cross-sectional structure without additional use of an electron beam. Since it is possible to check the processed section without using an electron beam, electron beam-generated damage or deformation to the processed section is avoided. Further, performing the observation using a high-speed electron beam after forming the thin film enables observation with suppressed sample damage. Processing of even thinner thin films using the FIB while observing images of the sample generated using an electron beam is then possible.11-20-2008
20080283745EMITTER CHAMBER, CHARGED PARTICAL APPARATUS AND METHOD FOR OPERATING SAME - An emitter chamber for a charged particle beam apparatus with a wall defining a vacuum enclosure is provided, the emitter chamber comprising a housing enclosing an emitter (and at least one pump and attachment means for attaching said emitter chamber to the wall of said charged particle apparatus so that the housing of said emitter chamber is accommodated within said vacuum enclosure.11-20-2008
20120292506SAMPLE OBSERVATION METHOD USING ELECTRON BEAMS AND ELECTRON MICROSCOPE - A disclosed method for observing the structure and characteristics of a specimen by an electron microscope realizes high-density charge accumulation on a specimen and improves the quality of voltage contrast images. For structural observation of a specimen and evaluation of its electrical characteristic using an electron beam, charging the specimen is performed. In this charging process, high-density charge accumulation on the specimen is achieved by irradiating the specimen with an electron beam set to have injection energy that falls within an injection energy band for which high charging efficiency is attained during electron beam irradiation and changing irradiation energy, while maintaining the injection energy.11-22-2012
20120292507Charged Particle Beam Device and Sample Observation Method - There is provided a charged particle beam device which has a mechanism adjusting the shape of an ionic liquid droplet to be adhered to a sample and the thickness of a film of the ionic liquid, in such a manner that they are suitable for various types of observations by an electronic microscope and the like, and for processing using ion beams.11-22-2012
20120292505METHODS OF USING TEMPERATURE CONTROL DEVICES IN ELECTRON MICROSCOPY - Methods of using temperature control devices in electron microscopes. The temperature of the device structure may be controlled to extract information about reactions and processes that was previously unobtainable.11-22-2012
20120292502HIGH ELECTRON ENERGY BASED OVERLAY ERROR MEASUREMENT METHODS AND SYSTEMS - A method, a system and a computer readable medium are provided. The method may include obtaining or receiving first area information representative of a first area of a first layer of an inspected object; wherein the inspected object further comprises a second layer that comprises a second area; wherein the second layer is buried under the first layer; directing electrons of a primary electron beam to interact with the first area; directing electrons of the primary electron beam to interact with the second area; generating detection signals responsive to electrons that were scattered or reflected from at least one of the first and second areas; and determining at least one spatial relationship between at least one feature of the first area and at least one feature of the second area based on the detection signals and on the first area information.11-22-2012
20120292504METHOD AND SYSTEM OF EVALUATING DISTRIBUTION OF LATTICE STRAIN ON CRYSTAL MATERIAL - A crystal material lattice strain evaluation method includes illuminating a sample having a crystal structure with an electron beam in a zone axis direction, and selectively detecting a certain diffracted wave diffracted in a certain direction among a plurality of diffracted waves diffracted by the sample. The method further includes repeating the illuminating step and the selectively detecting step while scanning the sample, and obtaining a strain distribution image in a direction corresponding to the certain diffracted wave from diffraction intensity at each point of the sample.11-22-2012
20120292503CHARGED-PARTICLE MICROSCOPY WITH OCCLUSION DETECTION - This invention relates to a method of examining a sample using a charged-particle microscope. This invention solves the problem of occlusion effects, whereby a given line-of-sight behind a particular region on a sample and a given detector is blocked by a topographical feature on the sample, thus hampering detection of the emitted radiation emanating from the occluded region. This problem is solved by using at least a first and second detector configuration to detect each portion of the emitted radiation and to produce at least a first and second corresponding image based thereupon; and using computer processing apparatus to automatically compare different members of the set of corresponding images and mathematically identify on the sample at least one occlusion region with an occluded line-of-sight relative to at least one of the detector configurations.11-22-2012
20080308728Atom Probes, Atom Probe Specimens, and Associated Methods - The present invention relates generally to atom probes, atom probe specimens, and associated methods. For example, certain aspects are directed toward methods for analyzing a portion of a specimen that includes selecting a region of interest and moving a portion of material in a border region proximate to the region of interest so that at least a portion of the region of interest protrudes relative to at least a portion of the border region. The method further includes analyzing a portion of the region of interest. Other aspects of the invention are directed toward a method for applying photonic energy in an atom probe process by passing photonic energy through a lens system separated from a photonic device and spaced apart from the photonic device. Yet other aspects of the invention are directed toward a method for reflecting photonic energy off an outer surface of an electrode onto a specimen.12-18-2008
20080283744Charged Particle Beam Device - A charged particle beam device of the present invention, which can correct astigmatism, off-axis aberration and out-of-focus state simultaneously at high speed, is provided with an electrostatic lens between an objective lens and a sample, which lens generates an electric field on a trajectory of a charged particle beam. The electrostatic lens is divided into a plurality of electrodes, and a voltage can be applied to the electrodes independently. By adjusting this voltage, any one of the astigmatism, the off-axis aberration and the out-of-focus state of the objective lens is corrected.11-20-2008
20120043462METHOD AND APPARATUS FOR CHARGED PARTICLE BEAM INSPECTION - A method, apparatus and computer readable medium for charged particle beam inspection of a sample comprising at least one sampling region and at least one skip region is disclosed. The method, apparatus and computer readable medium comprise receiving an imaging recipe which at least comprises information of the area of the sampling and skip regions; calculating a default stage speed according to the imaging recipe; calculating an alternative stage speed at least according to the default stage speed, the sampling region area information, and the skip region area information; calculating at least one imaging scan compensation offset at least according to the alternative stage speed; and inspecting the sample at the alternative stage speed while adjusting the motion of the charged particle beam according to the imaging scan compensation offsets, such that the charged particle beam tightly follows the motion of the stage and images only the sampling regions on the sample.02-23-2012
20130119251METHOD AND APPARATUS FOR CHARGED PARTICLE BEAM INSPECTION - A charged particle beam inspection apparatus comprises: an electron gun for irradiating an electron beam onto a sample; a detector for detecting a signal obtained from the sample; an image processor for forming an image from the signal obtained from the detector, and an energy controller for controlling the beam energy of the electron beam to be irradiated onto the sample. An identical charged particle beam inspection apparatus carries out a plurality of types of inspections. An inspection apparatus of a projection type may be applied thereto. A pattern defect inspection, a foreign material inspection, and an inspection for a defect in a multilayer are carried out. Beam energies E05-16-2013
20080272297Scanning electron microscope and CD measurement calibration standard specimen - A calibration standard specimen is provided to have formed therein calibrating patterns of a lattice shape discontinuously arrayed, and particular alignment patterns respectively disposed near the calibrating patterns so that the positioning of the specimen can be made to match the calibrating patterns to the measurement points.11-06-2008
20080265157Scanning Ion Probe Systems and Methods of Use Thereof - Briefly described, embodiments of this disclosure, among others, include scanning ion probe systems, methods of use thereof, scanning ion source systems, methods of use thereof, scanning ion probe mass spectrometry systems, methods of use thereof, methods of simultaneous ion analysis and imaging, and methods of simultaneous mass spectrometry and imaging.10-30-2008
20110006207METHOD FOR S/TEM SAMPLE ANALYSIS - An improved method and apparatus for S/TEM sample preparation and analysis. Preferred embodiments of the present invention provide improved methods for TEM sample creation, especially for small geometry (<100 nm thick) TEM lamellae. Preferred embodiments of the present invention also provide an in-line process for S/TEM based metrology on objects such as integrated circuits or other structures fabricated on semiconductor wafer by providing methods to partially or fully automate TEM sample creation, to make the process of creating and analyzing TEM samples less labor intensive, and to increase throughput and reproducibility of TEM analysis.01-13-2011
20090084954METHOD FOR INSPECTING AND MEASURING SAMPLE AND SCANNING ELECTRON MICROSCOPE - As an aspect for realizing accurate observation, inspection, or measurement of the contact hole with large aspect ratio, a method and a device to scan a second electron beam after scanning a first electron beam to a sample to charge the sample are proposed wherein the beam diameter of the first electron beam is made larger than the beam diameter of the second electron beam.04-02-2009
20100140470INTERFACE, A METHOD FOR OBSERVING AN OBJECT WITHIN A NON-VACUUM ENVIRONMENT AND A SCANNING ELECTRON MICROSCOPE - An interface, a scanning electron microscope and a method for observing an object that is positioned in a non-vacuum environment. The method includes: passing at least one electron beam that is generated in a vacuum environment through at least one aperture out of an aperture array and through at least one ultra thin membrane that seals the at least one aperture; wherein the at least one electron beam is directed towards the object; wherein the at least one ultra thin membrane withstands a pressure difference between the vacuum environment and the non-vacuum environment; and detecting particles generated in response to an interaction between the at least one electron beam and the object.06-10-2010
20120056088Navigation and Sample Processing Using an Ion Source Containing both Low-Mass and High-Mass Species - An improved method and apparatus for imaging and milling a substrate using a FIB system. Preferred embodiments of the present invention use a mixture of light and heavy ions, focused to the same focal point by the same beam optics, to simultaneously mill the sample surface (primarily with the heavy ions) while the light ions penetrate deeper into the sample to allow the generation of images of subsurface features. Among other uses, preferred embodiments of the present invention provide improved methods of navigation and sample processing that can be used for various circuit edit applications, such as backside circuit edit.03-08-2012
20100140472PATTERN DISPLACEMENT MEASURING METHOD AND PATTERN MEASURING DEVICE - An evaluation method and apparatus is provided for evaluating a displacement between patterns of a pattern image by using design data representative of a plurality of patterns superimposed ideally. A first distance is measured for an upper layer pattern between a line segment of the design data and an edge of the charged particle radiation image, a second distance is measured for a lower layer pattern between a line segment of the design data and an edge of the charged particle radiation image; and an superimposition displacement is detected between the upper layer pattern and lower layer pattern in accordance with the first distance and second distance.06-10-2010
20100140471Electron Beam Apparatus And Method of Operating The Same - An electron beam apparatus is offered which can well detect backscattered electrons or both backscattered electrons and secondary electrons if an electron detector is disposed above an objective lens in the apparatus. The electron beam apparatus has an electron beam source for emitting an electron beam accelerated by a given accelerating voltage, the objective lens for focusing the electron beam emitted from the beam source onto a specimen, scan coils for scanning the focused beam over the specimen, and the electron detector located above the objective lens and provided with a hole permitting passage of the beam. The detector has an electrode for producing an electric field that attracts the electrons produced from the specimen in response to the electron beam irradiation. Correction coils for correcting deflection of the beam caused by the electric field are located below the detector.06-10-2010
20090179151APPARATUS AND METHOD FOR INSPECTION AND MEASUREMENT - An electrification control electrode B is installed at a measured or inspected specimen side of an electrification control electrode A, and a constant voltage is applied from an electrification control electrode control portion of an electrification control electrode B according to an electrification state of a specimen, whereby a variation of an electrification state and a potential barrier of a specimen surface formed before an inspection is suppressed. A retarding potential is applied by an electrification control electrode, and the electrification control electrode B is disposed below the electrification control electrode A adjusted to equal potential to a specimen. As a result, it is possible to adjust the amount that secondary electrons emitted from a specimen such as a wafer to which a primary electron beam is irradiated return to a specimen, and thus it is possible to stably maintain an inspection condition of high sensitivity during an inspection.07-16-2009
20110220795TWIN BEAM CHARGED PARTICLE COLUMN AND METHOD OF OPERATING THEREOF - A column for a charged particle beam device is described. The column includes a charged particle emitter for emitting a primary charged particle beam as one source of the primary charged particle beam; a biprism adapted for acting on the primary charged particle beam so that two virtual sources are generated; and a charged particle beam optics adapted to focus the charged particle beam simultaneously on two positions of a specimen corresponding to images of the two virtual sources.09-15-2011
20120267529ELECTRON MICROSCOPE SYSTEM AND METHOD FOR EVALUATING FILM THICKNESS REDUCTION OF RESIST PATTERNS - The invention provides a system for achieving detection and measurement of film thickness reduction of a resist pattern with high throughput which can be applied to part of in-line process management. By taking into consideration the fact that film thickness reduction of the resist pattern leads to some surface roughness of the upper surface of the resist, a film thickness reduction index value is calculated by quantifying the degree of roughness of the part corresponding to the upper surface of the resist on an electron microscope image of the resist pattern which has been used in the conventional line width measurement. The amount of film thickness reduction of the resist pattern is estimated by applying the calculated index value to a database previously made for relating a film thickness reduction index value to an amount of film thickness reduction of the resist pattern.10-25-2012
20120267528Pattern Measuring Apparatus and Computer Program - A pattern measuring apparatus which can identify a kind of gaps formed by a manufacturing process having a plurality of exposing steps such as SADP, particularly, which can suitably access a gap even if a sample has the gap that is not easily accessed is disclosed. A feature amount regarding one end side of a pattern having a plurality of patterns arranged therein and a plurality of kinds of feature amounts regarding the other end side of the pattern are extracted from a signal detected on the basis of scanning of a charged particle beam. With respect to proper kinds of feature amounts among the plurality of kinds of feature amounts, the feature amount on one side of the pattern and that on the other end side of the pattern are compared. On the basis of the comparison, the kinds of spaces among the patterns are determined.10-25-2012
20120138793Method of Making Axial Alignment of Charged Particle Beam and Charged Particle Beam System - A method of making axial alignment of a charged particle beam starts with obtaining at least first through sixth image data while controlling the focal position of the beam on a sample in the direction of incidence, the excitation current in a first alignment coil, and the excitation current in a second alignment coil. Then, values of the excitation currents in the first and second alignment coils for the axial alignment of the beam are calculated from the at least first through sixth image data.06-07-2012
20090140142SCANNING PROBE MICROSCOPE AND MEASURING METHOD THEREBY - A scanning probe microscope performs first scanning movement of a probe in X and Y directions along a sample surface while controlling the position of the probe in a Z direction by an XYZ fine movement mechanism. Measurement information about the sample surface is obtained by a measurement section and displacement detection section during the first scanning. A probe movement path is determined for a second scanning that includes a measuring spot in which a measurement including a parallel direction component to the sample surface to be performed on the probe movement path is determined, on the basis of the measurement information about the sample surface. As a result of performing the measurement including the parallel direction component based on the second scanning wear of the probe is reduced and measurement reliability and simplified movement control of the scanning of the probe is enabled.06-04-2009
20120138791ELECTRON BEAM COLUMN AND METHODS OF USING SAME - In one embodiment, a first vacuum chamber of an electron beam column has an opening which is positioned along an optical axis so as to pass a primary electron beam that travels down the column. A source that emits electrons is positioned within the first vacuum chamber. A beam-limiting aperture is configured to pass a limited angular range of the emitted electrons. A magnetic immersion lens is positioned outside of the first vacuum chamber and is configured to immerse the electron source in a magnetic field so as to focus the emitted electrons into the primary electron beam. An objective lens is configured to focus the primary electron beam onto a beam spot on a substrate surface so as to produce scattered electrons from the beam spot. Controllable deflectors are configured to scan the beam spot over an area of the substrate surface. Other features and embodiments are also disclosed.06-07-2012
20110031395TRANSMISSION ELECTRON MICROSCOPE AND METHOD FOR OBSERVING SPECIMEN IMAGE WITH THE SAME - A first electron biprism is disposed in a condenser optical system and an observation region of a specimen is irradiated simultaneously with two electron beams of different angles. The two electron beams that have simultaneously transmitted the specimen are spatially separated and focused with a second electron biprism disposed in an imaging optical system and two electron microscopic images of different irradiation angles are obtained. The two picture images are obtained by a detecting unit. Based on the two picture images, a stereoscopic image or two images having different kinds of information of the specimen is/are produced and displayed on a display device.02-10-2011
20120068067GAS FIELD ION MICROSCOPES HAVING MULTIPLE OPERATION MODES - The disclosure relates to ion beams systems, such as gas field ion microscopes, having multiple modes of operation, as well as related methods. In some embodiments, the disclosure provides a method of operating a gas field ion microscope system that includes a gas field ion source, where the gas field ion source includes a tip including a plurality of atoms.03-22-2012
20120068065PATTERN DEFECT INSPECTION APPARATUS AND PATTERN DEFECT INSPECTION METHOD - A pattern defect inspection method includes generating electron beam irradiation point track data on the basis of first data on an inspection target pattern, irradiating the electron beam to the inspection target pattern in accordance with the electron beam irradiation point track data, detecting secondary electrons generated from the inspection target pattern due to the irradiation of the electron beam, acquiring second data regarding a signal intensity of the secondary electrons from a signal of the detected secondary electrons, and detecting an abnormal point from the second data and outputting the abnormal point as a defect of the inspection target pattern. The electron beam irradiation point track data includes data on a track of irradiation points of an electron beam to the inspection target pattern and is intended to control over scanning with the electron beam, the electron beam irradiation point track data.03-22-2012
20090212212Scanning Electron Microscope system and Method for Measuring Dimensions of Patterns Formed on Semiconductor Device By Using the System - The present invention is for providing a scanning electron microscope system adapted to output contour information fitting in with the real pattern edge end of a sample, and is arranged to generate a local projection waveform by projecting the scanning electron microscope image in the tangential direction with respect to the pattern edge at each point of the pattern edge of the scanning electron microscope image, estimate the cross-sectional shape of the pattern transferred on the sample by applying the local projection waveform generated at each point to a library, which has previously been created, correlating the cross-sectional shape with the electron beam signal waveform, obtain position coordinate of the edge end fitting in with the cross-sectional shape, and output the contour of the pattern as a range of position coordinates.08-27-2009
20090321635BETA-RAY SOOT CONCENTRATION DIRECT READOUT MONITOR AND METHOD FOR DETERMINING EFFECTIVE SAMPLE - A beta-ray soot concentration direct readout monitor and a method for determining effective sample. The monitor includes a fume collection cell and a fume mass detection cell. The fume collection cell includes a fume sampling gun, a filter paper and a mechanical control auto form feed structure. The fume sampling gun includes a gathering tube, a pitot tube and a sheath tube. The gathering tube tail of the fume sampling gun is equipped with an upper cavity body and a corresponding lower cavity body. The filter paper passes through space between the upper and lower cavity bodies. A paper supporting gate is provided at the inlet of the lower cavity body. A smoke outlet is equipped at a lower part of the lower cavity body. The sampling area of the soot acquired from the upper cavity body is at least twice with the actual testing area of the filter paper.12-31-2009
20090321633NANOPILLAR ARRAYS FOR ELECTRON EMISSION - The present invention provides systems, devices, device components and structures for modulating the intensity and/or energies of electrons, including a beam of incident electrons. In some embodiments, for example, the present invention provides nano-structured semiconductor membrane structures capable of generating secondary electron emission. Nano-structured semiconductor membranes of this aspect of the present invention include membranes having an array of nanopillar structures capable of providing electron emission for amplification, filtering and/or detection of incident radiation, for example secondary electron emission and/or field emission. Nano-structured semiconductor membranes of the present invention are useful as converters wherein interaction of incident primary electrons and nanopillars of the nanopillar array generates secondary emission. Nano-structured semiconductor membranes of this aspect of the present invention are also useful as directed charge amplifiers wherein secondary emission from a nanopillar array provides gain functionality for increasing the intensity of radiation comprising incident electrons.12-31-2009
20110220796METHODS AND DEVICES FOR HIGH THROUGHPUT CRYSTAL STRUCTURE ANALYSIS BY ELECTRON DIFFRACTION - A method and device for electron diffraction tomography of a crystal sample, which employs scanning of the electron beam over a plurality of discrete locations of the sample, in combination with a beam scanning protocol as the beam converges at every discrete location (09-15-2011
20110220794SYSTEMS AND METHODOLOGIES FOR PROTON COMPUTED TOMOGRAPHY - Disclosed are systems, devices and methodologies relating to proton computed tomography. In some implementations, detection of protons can yield track information before and after an object for each proton so as to allow determination of a likely path of each proton within the object. Further, measurement of energy loss experienced by each proton allows determination that a given likely path results in a given energy loss. A collection of such data allows characterization of the object. In the context of energy loss, such a characterization can include an image map of relative stopping power of the object. Various reconstruction methodologies for obtaining such an image, including but not limited to superiorization of a merit function such as total variation, are disclosed. In some implementations, various forms of total variation superiorization methodology can yield excellent results while being computationally efficient and with reduced computing time. In some implementations, such a methodology can result in high quality proton CT images using relatively low dose of protons.09-15-2011
20110220793Detection device and particle beam device having a detection device - A detection device and a particle beam device having a detection device ensure a good efficiency in detecting interaction particles and electromagnetic radiation. The detection device has a detector for detecting electromagnetic radiation and/or interaction particles and a filter element through which the electromagnetic radiation is transmitted. The filter element prevents the interaction particles from striking the detector such that the filter element is situated to move between a first position and a second position, the filter element in the first position being situated in relation to the detector in such a way that the filter element prevents the interaction particles from striking the detector. The filter element in the second position is situated in relation to the detector in such a way that the filter element allows the interaction particles to strike the detector. As an alternative, the filter element may be an object holder.09-15-2011
20110220791Ponderomotive Phase Plate For Transmission Electron Microscopes - A ponderomotive phase plate system and method for controllably producing highly tunable phase contrast transfer functions in a transmission electron microscope (TEM) for high resolution and biological phase contrast imaging. The system and method includes a laser source and a beam transport system to produce a focused laser crossover as a phase plate, so that a ponderomotive potential of the focused laser crossover produces a scattering-angle-dependent phase shift in the electrons of the post-sample electron beam corresponding to a desired phase contrast transfer function.09-15-2011
20100200749Semiconductor Testing Method and Semiconductor Tester - A semiconductor testing method capable of quickly counting semiconductor cells in which a seemingly horizontal or vertical line is drawn with a mouse, and raster rotation is performed in alignment with the closer axis. After that, the stage is horizontally moved, pattern matching is performed on an image on a position where the image should be disposed, and an angle is adjusted. The stage is moved evenly along the X-axis and the Y-axis, achieving a movement to a destination like a straight line. In synchronization with the smooth movement of the stage, a cell is surrounded in a rectangular frame by a ruler, and the number of cells is displayed with a numeric value.08-12-2010
20100200748ARRANGEMENT AND METHOD FOR THE CONTRAST IMPROVEMENT IN A CHARGED PARTICLE BEAM DEVICE FOR INSPECTING A SPECIMEN - It is provided a charged particle beam device for inspecting a specimen, comprising a charged particle beam source adapted to generate a primary charged particle beam; an objective lens device adapted to direct the primary charged particle beam onto the specimen; and a detector device comprising one or more charged particle detectors adapted to detect a secondary charged particle beam generated by the primary charged particle beam at the specimen and passing through the objective lens device, the secondary charged particle beam comprising a first group of secondary charged particles starting from the specimen with high starting angles and a second group of secondary charged particles starting from the specimen with low starting angles; wherein at least one of the charged particle detectors is adapted to detect depending on the starting angles one group of the first and the second groups of secondary charged particles.08-12-2010
20100200747METHOD FOR CORRECTING ASTIGMATISM IN ELECTRON EMISSION SPECTROMICROSCOPY IMAGING - A method for correcting astigmatism of an electronic optical column of an electron emission spectromicroscope, comprising the steps of: 08-12-2010
20090084953Method and system for observing a specimen using a scanning electron microscope - It is intended to reduce the auto focusing time and to increase the stability in a case that a defect on a specimen that has been detected by an inspection apparatus is observed by using a scanning electron microscope. One or more regions to be used for auto focusing are set in an imaging region or its neighborhood on the basis of semiconductor design information. A target focusing position in the imaging region is determined by performing auto focusing using the thus-set regions. The determined target focusing position is used for low-magnification imaging and high-magnification imaging. An auto focusing mode that is suitable for each imaging region is selected on the basis of the semiconductor design information.04-02-2009
20090084951Scintillator aspects for X-Ray fluorescence visualizer, imager, or information provider - One aspect relates to optically detecting an at least one scintillated viewable and/or visible photon that has been converted from the at least one induced X-ray fluorescing photon. The aspect can also relate to optically detecting an at least one scintillated viewable and/or visible photon that has been converted from the at least one induced X-ray fluorescing photon.04-02-2009
20090050802METHOD AND APPARATUS FOR INSPECTING SAMPLE SURFACE - Provided is a method and an apparatus for inspecting a sample surface with high accuracy.02-26-2009
20090200463Charged Particle Beam Device With Retarding Field Analyzer - The invention provides a charged particle beam device to inspect or structure a specimen with a primary charged particle beam propagating along an optical axis; a beam tube element having a tube voltage; and a retarding field analyzer in the vicinity of the beam tube element to detect secondary charged particles generated by the primary charged particle beam on the specimen. According to the invention, the retarding field analyzer thereby comprises an entrance grid electrode at a second voltage; at least one filter grid electrode at a first voltage; a charged particle detector to detect the secondary charged particles; and at least one further electrode element arranged between the entrance grid electrode and the at least one filter grid electrode. The at least one further electrode element reduces the size of the stray fields regions in the retarding electric field region to improve the energy resolution of the retarding field analyzer. The improvement of the energy resolution is significant, in particular when the beam tube element is part of a high voltage beam tube.08-13-2009
20120193531METHOD FOR LINE WIDTH MEASUREMENT - A method for line width measurement, comprising: providing a substrate, wherein a raised line pattern is formed on a surface of the substrate, and the line pattern has a width; forming a first measurement structure and a second measurement structure on opposite sidewalls of the line pattern in the width direction of the line pattern; removing the line pattern; and measuring the spacing between the first measurement structure and the second measurement structure, and obtaining the width of the line pattern by subtracting a predetermined offset from the spacing. The present invention facilitates to reduce the uncertainty associated with the measuring process and to improve the measurement precision.08-02-2012
20090242760Method and Apparatus for Measuring Dimension of Circuit Patterm Formed on Substrate by Using Scanning Electron Microscope - In the dimension measurement of a circuit pattern using a scanning electron microscope (SEM), in order to make it possible to automatically image desired evaluation points (EPs) on a sample, and automatically measure the circuit pattern formed at the evaluation points, according to the present invention, in the dimension measurement of a circuit pattern using a scanning electron microscope (SEM), it is arranged that coordinate data of the EP and design data of the circuit pattern including the EP are used as an input, creation of a dimension measurement cursor for measuring the pattern existing in the EP and selection or setting of the dimension measurement method are automatically performed based on the EP coordinate data and the design data to automatically create a recipe, and automatic imaging/measurement is performed using the recipe.10-01-2009
20090242759SLICE AND VIEW WITH DECORATION - Imprecisely located defects are imaged by milling a series of slices and performing a light, preferential etch to provide a topographical interface between materials having similar secondary electron emission characteristics. The slices are sufficiently small to capture small defects, but are sufficiently large to overcome problems with redeposition.10-01-2009
20120104253CHARGED PARTICLE BEAM MICROSCOPE AND MEASURING METHOD USING SAME - A charged particle beam device is equipped with a function of: obtaining an approximation function of a sample drift from a visual field shift amount among plural images (S05-03-2012
20120104252Particle-Optical Systems and Arrangements and Particle-Optical Components for such Systems and Arrangements - A particle-optical arrangement comprises a charged-particle source for generating a beam of charged particles; a multi-aperture plate arranged in a beam path of the beam of charged particles, wherein the multi-aperture plate has a plurality of apertures formed therein in a predetermined first array pattern, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the multi-aperture plate, and wherein a plurality of beam spots is formed in an image plane of the apparatus by the plurality of beamlets, the plurality of beam spots being arranged in a second array pattern; and a particle-optical element for manipulating the beam of charged particles and/or the plurality of beamlets; wherein the first array pattern has a first pattern regularity in a first direction, and the second array pattern has a second pattern regularity in a second direction electron-optically corresponding to the first direction, and wherein the second regularity is higher than the first regularity.05-03-2012
20120104251SCANNING ELECTRON MICROSCOPE DEVICE, EVALUATION POINT GENERATING METHOD, AND PROGRAM - An image acquisition condition necessary to so arrange FOV's as not to overlap along a device shape so that all constituent arreas necessary for electric characteristic measurement may be confined in the FOV's is determined from device shape information (including circuit design data and layout design data) possessed by CAD data. Since, contingently upon the shape of a wiring portion, the wiring portion of a device is expressed by using a plurality of basic constituent figures in combination, a process of arranging FOV's to the individual constituent figures is executed. For a cell portion, a FOV is arranged in reference to a cell outer frame and apexes. At that time, any apex is a starting point of the FOV arrangement process and another apex is an end point of the same process.05-03-2012
20090242763Environmental Cell for a Particle-Optical Apparatus - The invention relates to an environmental cell for use in e.g. an electron microscope. The environmental cell shows an aperture (10-01-2009
20090242762Apparatus and Method for Inspecting Sample - Method and apparatus have a film including a first surface to hold the liquid sample thereon, a vacuum chamber for reducing the pressure of an ambient in contact with a second surface of the film, primary beam irradiation means connected with the vacuum chamber and irradiating the sample with a primary beam via the film, signal detection means for detecting a secondary signal produced from the sample in response to the beam irradiation, a partitioning plate for partially partitioning off the space between the film and the primary beam irradiation means in the vacuum chamber, and a vacuum gauge for detecting the pressure inside the vacuum chamber.10-01-2009
20090242761METHOD AND APPARATUS FOR CHARGED PARTICLE BEAM INSPECTION - A method, apparatus and computer readable medium for charged particle beam inspection of a sample comprising at least one sampling region and at least one skip region is disclosed. The method, apparatus and computer readable medium comprise receiving an imaging recipe which at least comprises information of the area of the sampling and skip regions; calculating a default stage speed according to the imaging recipe; calculating an alternative stage speed at least according to the default stage speed, the sampling region area information, and the skip region area information; calculating at least one imaging scan compensation offset at least according to the alternative stage speed; and inspecting the sample at the alternative stage speed while adjusting the motion of the charged particle beam according to the imaging scan compensation offsets, such that the charged particle beam tightly follows the motion of the stage and images only the sampling regions on the sample.10-01-2009
20090256075Charged Particle Inspection Method and Charged Particle System - The present invention relates to a charged particle system comprising: a charged particle source; a first multi aperture plate; a second multi aperture plate disposed downstream of the first multi aperture plate, the second multi aperture plate; a controller configured to selectively apply at least first and second voltage differences between the first and second multi aperture plates; wherein the charged particle source and the first and second multi aperture plates are arranged such that each of a plurality of charged particle beamlets traverses an aperture pair, said aperture pair comprising one aperture of the first multi aperture plate and one aperture of the second multi aperture plate, wherein plural aperture pairs are arranged such that a center of the aperture of the first multi aperture plate is, when seen in a direction of incidence of the charged particle beamlet traversing the aperture of the first multi aperture plate, displaced relative to a center of the aperture of the second multi aperture plate. The invention further pertains to a a particle-optical component configured to change a divergence of a set of charged particle beamlets and a charged particle inspection method comprising inspection of an object using different numbers of charged particle beamlets.10-15-2009
20100032567Method of Machining a Work Piece with a Focused Particle Beam - The invention relates to a method for producing high-quality samples for e.g. TEM inspection. When thinning samples with e.g. a Focused Ion Beam apparatus (FIB), the sample often oxidizes when taken from the FIB due to the exposure to air. This results in low-quality samples, that may be unfit for further analysis. By forming a passivation layer, preferably a hydrogen passivation layer, on the sample in situ, that is: before taking the sample from the FIB, high quality.02-11-2010
20100155596METHOD AND SYSTEM FOR HEATING SUBSTRATE IN VACUUM ENVIRONMENT AND METHOD AND SYSTEM FOR IDENTIFYING DEFECTS ON SUBSTRATE - A method for heating a substrate in a vacuum environment and a system therefor is provided. The system includes a chamber capable of holding the substrate located in the vacuum environment and a light source capable of projecting a light beam only on a portion of the substrate. The method includes the following steps. First, the substrate is placed in the vacuumed chamber. Thereafter, the light beam emitted from the light source is projected on the portion of the substrate, such that the portion is significantly heated before whole the substrate is heated. When the light beam is a charged particle beam projected by a charged particle beam assembly and projected on defects located on the substrate, the defects are capable of being identified by an examination result provided by an examination assembly after termination of light beam projection.06-24-2010
20090121131Method of determination of resolution of scanning electron microscope - A method of determining a resolution of a scanning electron microscope includes using an image of an object provided by the scanning electron microscope during scanning of an object of measurement, obtaining information about a resolution of the scanning electron microscope from the image of the object during its scanning by the scanning electron microscope; and using the information for determining the resolution of the scanning electron microscope.05-14-2009
20100193686Electron Beam Exposure Or System Inspection Or Measurement Apparatus And Its Method And Height Detection Apparatus - An electron beam apparatus equipped with a height detection system includes an electron beam unit emitting an electron beam to the specimen, and a height detection system for detecting height of the specimen which is set on a table. The height detection system includes an illumination system configured to direct first and second beams of light through a mask with a multi-slit pattern to a surface of the specimen at substantially opposite azimuth angles and at substantially equal angles of incidence, first and second detectors which respectively detect first and second multi-slit images of the first and second beams reflected from the specimen and generate output signals thereof, and a device which receives the output signals and generates a comparison signal which is responsive to the height of the specimen. An objective lens of the electron beam unit is controlled in accordance with the comparison signal.08-05-2010
20100258720TEST STRUCTURE FOR CHARGED PARTICLE BEAM INSPECTION AND METHOD FOR DEFECT DETERMINATION USING THE SAME - A test structure and method thereof for determining a defect in a sample of semiconductor device includes at least one transistor rendered grounded. The grounded transistor is preferably located at at least one end of a test pattern designed to be included in the sample. When the test structure is inspected by charged particle beam inspection, the voltage contrast (VC) of the transistors in the test pattern including the grounded transistor is observed for determination of the presence of defect in the sample.10-14-2010
20100176296COMPOSITE FOCUSED ION BEAM DEVICE, AND PROCESSING OBSERVATION METHOD AND PROCESSING METHOD USING THE SAME - A composite focused ion beam device includes a first ion beam irradiation system 07-15-2010
20100258721DARK FIELD DETECTOR FOR USE IN AN ELECTRON MICROSCOPE - The invention relates to a dark-field detector for an electron microscope. The detector comprises a photodiode for detecting the scattered electrons, with an inner electrode and an outer electrode. As a result of the resistive behaviour of the surface layer the current induced by a scattered electron, e.g. holes, are divided over the electrodes, so that a current I10-14-2010
20120032077Pattern measuring apparatus and pattern measuring method - A pattern measurement apparatus and a pattern measurement method are capable of easily distinguishing a line pattern and a space pattern from one another, without being affected by the luminance of the pattern. The pattern measurement apparatus includes: irradiation unit for irradiating a sample with an electron beam; first electron detector and second electron detector arranged with an optical axis of the electron beam in between; image processor for generating image data of the pattern; line profile generator for generating a line profile of the pattern; and controller for causing the image processor to generate the image data of the pattern on the basis of an amount of electrons corresponding to the difference between a signal detected by the first electron detector and a signal detected by the second electron detector.02-09-2012
20120032076METHOD FOR INSPECTING EUV RETICLE AND APPARATUS THEREOF - A method of inspecting an EUV reticle is proposed, which uses an electron beam (EB) with low density and high energy to scan the surface of an EUV reticle for inspecting the EUV reticle. A step of conditioning surface charge is followed by a step of inspecting surface of the EUV reticle. The step of conditioning surface can neutralize the surface charge and the step of inspecting can obtain an image of the EUV reticle. The present invention uses a scanning electron microscope (SEM) to provide a primary electron beam for conditioning the surface charge and a focused primary electron beam for scanning the surface.02-09-2012
20100224779LAYERED SCANNING CHARGED PARTICLE MICROSCOPE PACKAGE FOR A CHARGED PARTICLE AND RADIATION DETECTOR - A scanning charged particle microscope includes a layered charged particle beam column package; a sample holder; and a layered micro-channel plate detector package located between the column package and the sample holder.09-09-2010
20100224778LAYERED SCANNING CHARGED PARTICLE APPARATUS PACKAGE HAVING AN EMBEDDED HEATER - A scanning charge particle apparatus includes a layered charged particle beam column package; a sample holder; and a heater, such as a resistive heater, in one of the layers of the package that conductively heats layers and/or components.09-09-2010
20100224777LAYERED SCANNING CHARGED PARTICLE MICROSCOPE WITH DIFFERENTIAL PUMPING APERTURE - A scanning charged particle apparatus includes a layered charged particle beam column package; a sample holder; and a layered differential pumping aperture that assists in maintaining two different vacuums.09-09-2010
20100213369Method - The invention relates to a method for producing image contrast by phase shifting in the electron optics, wherein, from an intermediate image (08-26-2010
20100252733METHOD FOR MASKLESS PARTICLE-BEAM EXPOSURE - For maskless irradiating a target with a beam of energetic electrically charged particles using a pattern definition means with a plurality of apertures and imaging the apertures in the pattern definition means onto a target which moves (v) relative to the pattern definition means laterally to the axis, the location of the image is moved along with the target, for a pixel exposure period within which a distance of relative movement of the target is covered which is at least a multiple of the width (w) of the aperture images as measured on the target, and after said pixel exposure period the location of the beam image is changed, which change of location generally compensates the overall movement of the location of the beam image.10-07-2010
20100001184MINIATURIZED ULTRAFINE PARTICLE SIZER AND MONITOR - An apparatus for measuring particle size distribution includes a charging device and a precipitator. The charging device includes a corona that generates charged ions in response to a first applied voltage, and a charger body that generates a low energy electrical field in response to a second applied voltage in order to channel the charged ions out of the charging device. The corona tip and the charger body are arranged relative to each other to direct a flow of particles through the low energy electrical field in a direction parallel to a direction in which the charged ions are channeled out of the charging device. The precipitator receives the plurality of particles from the charging device, and includes a disk having a top surface and an opposite bottom surface, wherein a predetermined voltage is applied to the top surface and the bottom surface to precipitate the plurality of particles.01-07-2010
20100001183Phase Plate, Imaging Method, and Electron Microscope - The invention concerns a phase plate for electron optical imaging, wherein the zero beam (01-07-2010
20130126730SEQUENTIAL RADIAL MIRROR ANALYSER - A sequential radial mirror analyser (RMA) (05-23-2013
20100090107METHOD AND HANDLING APPARATUS FOR PLACING PATTERNING DEVICE ON SUPPORT MEMBER FOR CHARGED PARTICLE BEAM IMAGING - A patterning device handling apparatus for use in charged particle beam imaging is disclosed. The disclosed patterning device handling apparatus comprises a first gripping member and a second gripping member. The first gripping member is equipped with a plurality of first positioning projections, and the second gripping member is equipped with a plurality of second positioning projections. When the patterning device is held at one angle, the first positioning projections abut against one edge of the patterning device and the second positioning projections abut against the opposite edge of the patterning device. When the patterning device is held at another angle, the first positioning projections abut against two neighboring edges of the patterning device, and the second positioning projections abut against the other two neighboring edges of the patterning device. Therefore, the disclosed patterning device handling apparatus can hold the pattering device at different angles.04-15-2010
20120187291Method of Depositing Protective Structures - A process of preparing a lamella from a substrate includes manufacturing a protection strip on an edge portion of the lamella to be prepared from the substrate, and preparing the lamella, wherein the manufacturing the protection strip includes a first phase of activating a surface area portion of the substrate, and a second phase of electron beam assisted deposition of the protective strip on the activated surface area portion from the gas phase.07-26-2012
20110057100Transmission Electron Microscope, and Method of Observing Specimen - Provided is means which enables observation of the shape of a specimen as it is without deforming the specimen. Observation is made by allowing a specimen-holding member having an opening (for example, microgrid and mesh) to hold an ionic liquid and charging a specimen thereto, to allow the specimen to suspend in the ionic liquid. Furthermore, in the proximity of the specimen-holding member, a mechanism of injecting an ionic liquid (ionic liquid introduction mechanism) and/or an electrode are provided. When a voltage is applied to the electrode, the specimen moves or deforms in the ionic liquid. How the specimen moves or deforms can be observed. Furthermore, in the proximity of specimen-holding member, an evaporation apparatus is provided to enable charge of the specimen into the ionic liquid while evaporating. Furthermore, in the proximity of the specimen-holding member, a microcapillary is provided to charge a liquid-state specimen into the ionic liquid. Note that the specimen-holding member is designed to be rotatable.03-10-2011
20090114816Advanced Roughness Metrology - A method for evaluating a feature, consisting of receiving an image of the feature and determining respective coordinates of a plurality of points on an edge of the feature in the image. A figure having a noncircular non-linear shape is fitted to the plurality of points, and respective distances between the plurality of points and the figure are determined. A roughness parameter for the feature is computed in response to the respective distances. The method finds application in the analysis of critical dimensions (CD) of integrated circuits and, particularly, in the measurement of the edge roughness of their features and components as imaged by means of eg. The electron scanning microscopy (SEM).05-07-2009
20090114818Particle-Optical Component - The present invention relates to a particle-optical component comprising a first multi-aperture plate, and a second multi-aperture plate forming a gap between them; wherein a plurality of apertures of the first multi-aperture plate is arranged such that each aperture of the plurality of apertures of the first multi-aperture plate is aligned with a corresponding aperture of a plurality of apertures of the second multi-aperture plate; and wherein the gap has a first width at a first location and a second width at a second location and wherein the second width is by at least 5% greater than the first width. In addition, the present invention pertains to charged particle systems and arrangements comprising such components and methods of manufacturing multi aperture plates having a curved surface.05-07-2009
20090039257Electron beam device - An electron beam device has an electron gun for generating an electron beam, an objective lens for focusing the electron beam on an object and at least one detector for detecting electrons emitted by the object or electrons backscattered by the object. Detection of electrons emitted by or backscattered by an object may be simplified and improved using quadrupole devices and certain configurations of these devices provided in the electron beam device.02-12-2009
20100294927High throughput inspecting - The various embodiments provide methods and apparatus high-throughput reading and decoding of information-encoding features (especially identification features) on pharmaceutical compositions for the purpose of e.g. counterfeiting detection and inventory tracking/tracing. A preferred embodiment provides high-throughput imaging of regular arrays of pharmaceutical tablets with a scanning electron microscope. Another preferred embodiment provides video-rate scanning probe imaging of pharmaceutical compositions and especially atomic force microscopy imaging thereof.11-25-2010
20090032707PATTERN MEASUREMENT METHOD AND PATTERN MEASUREMENT SYSTEM - Easily and correctly measuring a dimension of a pattern of a photomask or of an OPC pattern of the photomask.02-05-2009
20080230694Beam Optical Component Having a Charged Particle Lens - The present invention relates to a beam optical component including a charged particle lens for focusing a charged particle beam, the charged particle lens comprising a first element having a first opening for focusing the charged particle beam; a second element having a second opening for focusing the charged particle beam and first driving means connected with at least one of the first element and the second element for aligning the first opening with respect to the second opening. With the first driving means, the first opening and the second opening can be aligned with respect to each other during beam operation to provide a superior alignment of the beam optical component for a better beam focusing. The present invention also relates to a charged particle beam device that uses said beam optical component for focusing the charged particle beam, and a method to align first opening and second opening with respect to each other.09-25-2008
20080230695Method of imaging radiation from an object on a detection device and an inspection device for inspecting an object - A method of imaging radiation from an object on a detection device. The method includes directing a beam of coherent radiation to the object, scanning the beam of radiation over an angle in or out of a plane of incidence relative to the object, and imaging scattered radiation from the object on the detection device.09-25-2008
20100294929Sample Electrification Measurement Method and Charged Particle Beam Apparatus - The present invention has the object of providing charged particle beam irradiation method ideal for reducing the focus offset, magnification fluctuation and measurement length error in charged particle beam devices. To achieve these objects, a method is disclosed in the invention for measuring the electrical potential distribution on the sample with a static electrometer while loaded by a loader mechanism. Another method is disclosed for measuring the local electrical charge at specified points on the sample, and isolating and measuring the wide area electrostatic charge quantity from those local electrostatic charges. Yet another method is disclosed for correcting the measurement length value or magnification based on fluctuations found by measuring the amount of electrostatic charge at the specified points under at least two charged particle optical conditions, and then using a charged particle beam to measure fluctuations in measurement dimensions occurring due to fluctuations in the electrostatic charge at the specified locations.11-25-2010
20110114839ELECTRON BEAM LAYER MANUFACTURING USING SCANNING ELECTRON MONITORED CLOSED LOOP CONTROL - A process (and apparatus for performing the process) for layer manufacturing a three-dimensional work piece comprising the steps of; feeding raw material in a solid state to a first predetermined location; exposing the raw material to an electron beam to liquefy the raw material; depositing the raw material onto a substrate as a molten pool deposit, the deposit having a forward edge region in an x-y plane with a forward edge region width and a trailing edge region in the x-y plane with a trailing edge region width, under at least one first processing condition; monitoring the molten pool deposit for at least one preselected condition using detecting of scatter from a scanning electron beam contemporaneously with the depositing step; solidifying the molten pool deposit; automatically altering the first processing condition to a different processing condition based upon information obtained from the comparing step; and repeating steps at one or more second locations for building up layer by layer, generally along a z-axis that is orthogonal to the x-y plane, a three-dimensional work piece.05-19-2011
20110127429Method and Apparatus For Measuring Dimension Of Circuit Pattern Formed On Substrate By Using Scanning Electron Microscope - In the dimension measurement of a circuit pattern using a scanning electron microscope (SEM), in order to make it possible to automatically image desired evaluation points (EPs) on a sample, and automatically measure the circuit pattern formed at the evaluation points, according to the present invention, in the dimension measurement of a circuit pattern using a scanning electron microscope (SEM), it is arranged that coordinate data of the EP and design data of the circuit pattern including the EP are used as an input, creation of a dimension measurement cursor for measuring the pattern existing in the EP and selection or setting of the dimension measurement method are automatically performed based on the EP coordinate data and the design data to automatically create a recipe, and automatic imaging/measurement is performed using the recipe.06-02-2011
20110127428ELECTRON DETECTION SYSTEMS AND METHODS - Systems and methods to detect electrons from one or more samples are disclosed. In some embodiments, the systems and methods involve one or more magnetic field sources, for deflecting secondary electrons emitted from the surface of the samples.06-02-2011
20110127427SPECIMEN HOLDER USED FOR MOUNTING - A novel specimen holder for specimen support devices for insertion in electron microscopes. The novel specimen holder of the invention provides mechanical support for specimen support devices and as well as electrical contacts to the specimens or specimen support devices.06-02-2011
20100320381METHOD FOR CHARACTERIZING IDENTIFIED DEFECTS DURING CHARGED PARTICLE BEAM INSPECTION AND APPLICATION THEREOF - A method for characterizing identified defects during charged particle beam inspection of a sample is disclosed. The method comprises obtaining a voltage contrast image of the sample by using a charged particle beam imaging apparatus at an inspection temperature; identifying, from the voltage contrast image, the presence of at least one defect on the sample; providing reference data of the sample, wherein the reference data represent at least one reference defect on the sample; comparing the location or geographical distribution of the identified defects and the reference defects on the sample to correlate the identified defects with the inspection temperature thereby characterizing the identified defects.12-23-2010
20110240852AUTOMATED SLICE MILLING FOR VIEWING A FEATURE - A method and apparatus for performing a slice and view technique with a dual beam system. The feature of interest in an image of a sample is located by machine vision, and the area to be milled and imaged in a subsequent slice and view iteration is determined through analysis of data gathered by the machine vision at least in part. A determined milling area may be represented as a bounding box around a feature, which dimensions can be changed in accordance with the analysis step. The FIB is then adjusted accordingly to slice and mill a new face in the subsequent slice and view iteration, and the SEM images the new face. Because the present invention accurately locates the feature and determines an appropriate size of area to mill and image, efficiency is increased by preventing the unnecessary milling of substrate that does not contain the feature of interest.10-06-2011
20110001046NONDESTRUCTIVE INSPECTION APPARATUS AND NONDESTRUCTIVE INSPECTION METHOD FOR COMPOSITE STRUCTURE - The invention provides a nondestructive inspection apparatus and nondestructive inspection method for inspecting the inside of a surface layer of a composite structure using cosmic-ray muons. The nondestructive inspection apparatus is to inspect the inside of the surface layer of a composite structure 01-06-2011
20100133432Device and method for analyzing a sample - A device and method for analyzing a sample provide for extracting a part to be analyzed from the sample with the aid of a previously generated opening in the sample. The part to be analyzed is examined in greater detail with the aid of a particle beam. For this purpose, the sample is placed in the opening or on a sample holder.06-03-2010
20110024622SYSTEM AND METHOD FOR MATERIAL ANALYSYS OF A MICROSCOPIC ELEMENT - A system and a method for material analysis of a microscopic element, the method comprising: illuminating an area that includes at least a portion of the microscopic element by a charged particle beam, detecting particles that are generated in the area in response to the charged particle beam and analyzing the detected particles to provide an indication about a material characteristic of the microscopic element, wherein the operation of illumination is implemented as a sequence of displacement compensation determination periods, each provided between consecutive material analysis periods, the method further comprising evaluating during a displacement compensation determination period, a displacement of the charged particle beam with respect to the microscopic element and during a consecutive material analysis period applying a spatial adjustment measure as required, thereby compensating for a drift of the charged particle beam.02-03-2011
20110024621SCANNING ELECTRON MICROSCOPE CONTROL DEVICE, CONTROL METHOD, AND PROGRAM - An SEM control device comprises: an image acquisition unit that acquires by an SEM a plurality of images of a prescribed object, each of which is formed of a plurality of pixels lined up in a first direction, at a plurality of positions in a second direction perpendicular to the first direction; a variation range calculation unit that obtains maximum values and minimum values of gray scale values among the plurality of images at respective locations of the plurality of pixels, and calculates a variation range of the maximum values and a variation range of the minimum values for the plurality of pixels; and a brightness/contrast adjustment unit that adjusts brightness and contrast of the SEM so as to minimize difference between the variation range of the maximum values and the variation range of the minimum values.02-03-2011
20110031398Imaging Apparatus and Method - The imaging apparatus comprises a micro-pipette (02-10-2011
20110031396METHOD FOR STEM SAMPLE INSPECTION IN A CHARGED PARTICLE BEAM INSTRUMENT - A method for sample examination in a dual-beam FIB calculates a first angle as a function of second, third and fourth angles defined by the geometry of the FIB and the tilt of the specimen stage. A fifth angle is calculated as a function of the stated angles, where the fifth angle is the angle between the long axis of an excised sample and the projection of the axis of the probe shaft onto the X-Y plane. The specimen stage is rotated by the calculated fifth angle, followed by attachment to the probe tip and lift-out. The sample may then be positioned perpendicular to the axis of the FIB electron beam for STEM analysis by rotation of the probe shaft through the first angle.02-10-2011
20110031397METHOD FOR STEM SAMPLE INSPECTION IN A CHARGED PARTICLE BEAM INSTRUMENT - A method for sample examination in a dual-beam FIB calculates a first angle as a function of second, third and fourth angles defined by the geometry of the FIB and the tilt of the specimen stage. A fifth angle is calculated as a function of the stated angles, where the fifth angle is the angle between the long axis of an excised sample and the projection of the axis of the probe shaft onto the X-Y plane. The specimen stage is rotated by the calculated fifth angle, followed by attachment to the probe tip and lift-out. The sample may then be positioned perpendicular to the axis of the FIB electron beam for STEM analysis by rotation of the probe shaft through the first angle.02-10-2011
20110031394HIGH PRESSURE CHARGED PARTICLE BEAM SYSTEM - The current invention includes methods and apparatuses for processing, that is, altering and imaging, a sample in a high pressure charged particle beam system. Embodiments of the invention include a cell in which the sample is positioned during high pressure charged particle beam processing. The cell reduces the amount of gas required for processing, thereby allowing rapid introduction, exhaustion, and switching between gases and between processing and imaging modes. Maintaining the processes gases within the cell protects the sample chamber and column from contact with the gases. In some embodiments, the temperature of the cell walls and the sample can be controlled.02-10-2011
20090224151DETECTOR AND INSPECTING APPARATUS - An inspecting apparatus for reducing a time loss associated with a work for changing a detector is characterized by comprising a plurality of detectors 09-10-2009
20110042568METHOD FOR ADJUSTING IMAGING MAGNIFICATION AND CHARGED PARTICLE BEAM APPARATUS - There is provided a method for setting a suitable imaging magnification for each of a plurality of measurement places in a charged particle beam apparatus which images a semiconductor pattern.02-24-2011
20110114838High-Sensitivity and High-Throughput Electron Beam Inspection Column Enabled by Adjustable Beam-Limiting Aperture - One embodiment relates to an electron-beam apparatus for defect inspection and/or review of substrates or for measuring critical dimensions of features on substrates. The apparatus includes an electron gun and an electron column. The electron gun includes an electron source configured to generate electrons for an electron beam and an adjustable beam-limiting aperture which is configured to select and use one aperture size from a range of aperture sizes. Another embodiment relates to providing an electron beam in an apparatus. Advantageously, the disclosed apparatus and methods reduce spot blur while maintaining a high beam current so as to obtain both high sensitivity and high throughput.05-19-2011
20110084207Charged Particle Beam System Having Multiple User-Selectable Operating Modes - A method for performing milling and imaging in a focused ion beam (FIB) system employing an inductively-coupled plasma ion source, wherein two sets of FIB system operating parameters are utilized: a first set representing optimized parameters for operating the FIB system in a milling mode, and a second set representing optimized parameters for operating in an imaging mode. These operating parameters may comprise the gas pressure in the ICP source, the RF power to the ICP source, the ion extraction voltage, and in some embodiments, various parameters within the FIB system ion column, including lens voltages and the beam-defining aperture diameter. An optimized milling process provides a maximum milling rate for bulk (low spatial resolution) rapid material removal from the surface of a substrate. An optimized imaging process provides minimized material removal and higher spatial resolutions for improved imaging of the substrate area being milled.04-14-2011
20090032705Fast Tip Scanning For Scanning Probe Microscope - An atomic force microscope apparatus scans a sample disposed in an X-Y plane, the sample having a surface, the surface having features in a Z direction perpendicular to the X-Y plane. The apparatus comprises an elongated arm having a pivot point and being rotatable about the pivot point in the X-Y plane; and a probe tip substructure that includes (i) a probe tip and (ii) a tip actuator. The probe tip substructure is disposed on the elongated arm a predetermined distance from the pivot point, wherein the arm disposes the probe tip at a location extended outward from the remainder of the AFM apparatus. The atomic force microscope apparatus moves the probe tip (i) by rotating the elongated arm about the pivot point, and (ii) by moving the tip actuator.02-05-2009
20100163727METHODS OF OPERATING A NANOPROBER TO ELECTRICALLY PROBE A DEVICE STRUCTURE OF AN INTEGRATED CIRCUIT - Methods for nanoprobing a device structure of an integrated circuit. The method may include scanning a primary charged particle beam across a first region of the device structure with at least one probe proximate to the first region and a second region of the device structure is masked from the primary charged particle beam. The method may further include collecting secondary electrons emitted from the first region of the device structure and the at least one probe to form a secondary electron image. The secondary electron image includes the first region and the at least one probe as imaged portions and the second region as a non-imaged portion. Alternatively, the second region may be scanned by the charged particle beam at a faster scan rate than the first region so that the second region is also an imaged portion of the secondary electron image.07-01-2010
20100032565ELECTRON MICROSCOPE AND A METHOD FOR MEASURING THE DEFOCUS VARIATION OR THE LIMIT RESOLUTION - An electron microscope and a method for measuring the defocus spread or the limiting resolution of an electron microscope takes advantage of the fact that, in the case of tilted illumination, any aberration that may be present and the defocus spread of the electron microscope anisotropically change the intensity distribution in the diffractogram. In particular, the envelope of the diffractogram is anisotropically narrowed. If both the tilt of the electron beam and any aberration that may be present are known, and the focus distribution is assumed to be Gaussian-shaped, the defocus spread of the electron microscope is the only parameter still unknown that influences the anisotropic changes in intensity distribution. Quantitative conclusions as to the defocus spread can thus be drawn from the changes. However, the focus distribution can also be determined from the anisotropic narrowing without the use of a model, and without a priori assumptions about the shape thereof. In this way, the limiting resolution of the electron microscope can be determined.02-11-2010
20110079711Particle beam microscopy system and method for operating the same - A particle beam system 04-07-2011
20100219340APPARATUS AND METHOD FOR MEASURING SEMICONDUCTOR DEVICE - An apparatus for measuring a semiconductor device is provided. The apparatus includes a beam emitter configured to irradiate an electron beam onto a sample having the entire region composed of a critical dimension (CD) region, which is formed by etching or development, and a normal region connected to the CD region, and an analyzer electrically connected to the beam emitter, and configured to select and set a wavelength range of a region in which a difference in reflectance between the CD region and the normal region occurs, after obtaining reflectance from the electron beam reflected by a surface of the sample according to the wavelength of the electron beam. A method of measuring a semiconductor device using the measuring apparatus is also provided. Therefore, it is possible to minimize a change in reflectance due to the thickness and properties of the semiconductor device, and set a wavelength range to monitor a specific wavelength, thereby accurately measuring and analyzing a CD value of a measurement part of the semiconductor device.09-02-2010
20110079710MICROSCOPY SUPPORT STRUCTURES - Electron microscope support structures and methods of making and using same. The support structures are generally constructed using semiconductor materials and semiconductor manufacturing processes. The temperature of the support structure may be controlled and/or gases or liquids may be confined in the observation region for reactions and/or imaging.04-07-2011
20110240853ION SOURCES, SYSTEMS AND METHODS - Ion sources, systems and methods are disclosed. In some embodiments, the ion sources, systems and methods can exhibit relatively little undesired vibration and/or can sufficiently dampen undesired vibration. This can enhance performance (e.g., increase reliability, stability and the like). In certain embodiments, the ion sources, systems and methods can enhance the ability to make tips having desired physical attributes (e.g., the number of atoms on the apex of the tip). This can enhance performance (e.g., increase reliability, stability and the like).10-06-2011
20120145894METHOD AND APPARATUS FOR INSPECTION OF SCATTERED HOT SPOT AREAS ON A MANUFACTURED SUBSTRATE - One embodiment relates to a method of automated inspection of scattered hot spot areas on a manufactured substrate using an electron beam apparatus. A stage holding the substrate is moved along a swath path so as to move a field of view of the electron beam apparatus such that the moving field of view covers a target area on the substrate. Off-axis imaging of the hot spot areas within the moving field of view is performed. A number of hot spot areas within the moving field of view may be determined, and the speed of the stage movement may be adjusted based on the number of hot spot areas within the moving field of view. Another embodiment relates to an electron beam apparatus for inspecting scattered areas on a manufactured substrate. Other embodiments, aspects and features are also disclosed.06-14-2012
20100025578Dual Beam System - A dual beam system includes an ion beam system and a scanning electron microscope with a magnetic objective lens. The ion beam system is adapted to operate optimally in the presence of the magnetic field from the SEM objective lens, so that the objective lens is not turned off during operation of the ion beam. An optional secondary particle detector and an optional charge neutralization flood gun are adapted to operate in the presence of the magnetic field. The magnetic objective lens is designed to have a constant heat signature, regardless of the strength of magnetic field being produced, so that the system does not need time to stabilize when the magnetic field is changed.02-04-2010
20120145897Transmission Electron Microscope Sample Holder with Optical Features - A sample holder for holding a sample to be observed for research purposes, particularly in a transmission electron microscope (TEM), generally includes an external alignment part for directing a light beam in a predetermined beam direction, a sample holder body in optical communication with the external alignment part and a sample support member disposed at a distal end of the sample holder body opposite the external alignment part for holding a sample to be analyzed. The sample holder body defines an internal conduit for the light beam and the sample support member includes a light beam positioner for directing the light beam between the sample holder body and the sample held by the sample support member.06-14-2012
20090218489SYSTEMS AND METHODS FOR MATERIAL TREATMENT AND CHARACTERIZATION EMPLOYING POSITRON ANNIHILATION - Methods of treating materials include providing positrons within the material and detecting radiation emitted upon annihilation of positron-electron pairs within the material while treating the material. Treating the material may include subjecting the material to one or more of a pressure change, a temperature change, and a change in atmosphere while detecting the radiation. Methods of characterizing materials include providing a material in a non-equilibrium state, detecting electromagnetic radiation emitted upon annihilation of positron-electron pairs within the material, and detecting a change in one or more physical or chemical characteristics of the material. Systems for treating materials include an enclosure, a positron-generating device for providing positrons within material to be treated within the enclosure, and a radiation detection device for detecting radiation emitted upon annihilation of positron-electron pairs.09-03-2009
20090218488BEAM POSITIONING FOR BEAM PROCESSING - An improved method and apparatus of beam processing corrects for beam drift while a beam is processing a sample. The beam position is aligned using a fiducial that is sufficiently near the working area so that the fiducial can be imaged and the sample processed without a stage moving. During processing, the beam positioning is corrected for drift using a model that predicts the drift.09-03-2009
20090039258Scanning Electron Microscope And Method For Detecting An Image Using The Same - A scanning electron microscope includes an electron beam source which emits an electron beam, a beam current controller which controls a beam current of the electron beam, an electron beam converger which converges the electron beam on a surface of a sample, an electron beam scanner which scans the electron beam on the surface of the sample, a table which mounts the sample and moves at least in one direction, a detector which detects a secondary electron or a reflected electron emanated from the sample by the scan of the electron beam, an image former which forms an image of the sample based on a detection value of the detector, an image processor which processes the image formed by the image former. The beam current controller controls the beam current of the electron beam by changing transmittance of the electron beam in an irradiation path of the electron beam.02-12-2009
20100012838INSPECTION METHOD AND APPARATUS OF A GLASS SUBSTRATE FOR IMPRINT - A method for inspecting a glass substrate for imprint including a glass substrate with a pattern surface and a transmissive conductive film coating at least part of the pattern surface, includes an electron beam irradiation step of irradiating the pattern surface of the glass substrate for imprint disposed on a stage with an electron beam having a predetermined irradiation area; an electron detection step of simultaneously detecting electrons from the pattern surface by the electron beam irradiation by means of a detection surface with a plurality of pixels; and a defect detection step of obtaining an image of the pattern surface based on the electrons detected by the detection surface and detecting a defect of the pattern surface.01-21-2010
20100012837MULTIPLE CURRENT CHARGED PARTICLE METHODS - Charged particle beams with different charged particle currents are disclosed. In some embodiments, a method includes exposing a sample to a first ion beam having a first ion current at the sample, and exposing the sample to a second ion beam having a second ion current at the sample, where the first ion current is at least two times greater than the second ion current. In certain embodiments, a method includes creating a first ion beam at a first pressure, exposing a sample to the first ion beam, creating a second ion beam at a second pressure, and exposing the sample to the second ion beam, where the first pressure is at least two times greater than the second pressure.01-21-2010
20100038535Sample dimension measuring method and scanning electron microscope - The present invention suppresses decreases in the volumes of the patterns which have been formed on the surfaces of semiconductor samples or of the like, or performs accurate length measurements, irrespective of such decreases. In an electrically charged particle ray apparatus by which the line widths and other length data of the patterns formed on samples are to be measured by scanning the surface of each sample with electrically charged particle rays and detecting the secondary electrons released from the sample, the scanning line interval of said electrically charged particle rays is set so as not to exceed the irradiation density dictated by the physical characteristics of the sample. Or measured length data is calculated from prestored approximation functions.02-18-2010
20120241606MULTIPLE-BEAM SYSTEM FOR HIGH-SPEED ELECTRON-BEAM INSPECTION - One embodiment disclosed relates to a multiple-beamlet electron beam imaging apparatus for imaging a surface of a target substrate. A beam splitter lens array is configured to split the illumination beam to form a primary beamlet array, and a scanning system is configured to scan the primary beamlet array over an area of the surface of the target substrate. In addition, a detection system configured to detect individual secondary electron beamlets. Another embodiment disclosed relates to a method of imaging a surface of a target substrate using a multiple-beamlet electron beam column. Other features and embodiments are also disclosed.09-27-2012
20110174971Phase contrast imaging and preparing a tem therefor - New methods for phase contrast imaging in transmission electron microscopy use the imaging electron beam itself to prepare a hole-free thin film for use as an effective phase plate, in some cases eliminating the need for ex-situ fabrication of a hole and reducing requirements for the precision of the ZPP hardware. The electron optical properties of the ZPP hardware are modified primarily in two ways: by boring a hole using the electron beam; and/or by modifying the electro-optical properties by charging induced by the primary beam. Furthermore a method where the sample is focused by a lens downstream from the ZPP hardware is disclosed. A method for transferring a back focal plane of the objective lens to a selected area aperture plane and any plane conjugated with the back focal plane of the objective lens is also provided.07-21-2011
20110101222Z-STAGE CONFIGURATION AND APPLICATION THEREOF - A stage configuration is provided, wherein a ceramic plate is used as the z-stage body to decrease the use of the metal plates in the conventional configuration, so that the compact structure of the z-stage may decrease the vibrational movements of the z-stage. Further, two Laser interferometer are used to detect a movement of different points along a vertical line of the z-stage sidewall to calculate a movement of the specimen surface, so that a horizontal movement of the specimen surface can be detected more accurately05-05-2011
20110073758MICRO-SAMPLE PROCESSING METHOD, OBSERVATION METHOD AND APPARATUS - As sample sizes have decreased to microscopic levels, it has become desirable to establish a method for thin film processing and observation with a high level of positional accuracy, especially for materials which are vulnerable to electron beam irradiation. The technological problem is to judge a point at which to end FIB processing and perform control so that the portion to be observed ends up in a central portion of the thin film. The present invention enables display of structure in cross-section by setting a strip-like processing region in an inclined portion of a sample cross-section and enlarging the display of the strip-like processing region on a processing monitor in a short-side direction. It is then possible to check the cross-sectional structure without additional use of an electron beam. Since it is possible to check the processed section without using an electron beam, electron beam-generated damage or deformation to the processed section is avoided. Further, performing the observation using a high-speed electron beam after forming the thin film enables observation with suppressed sample damage. Processing of even thinner thin films using the FIB while observing images of the sample generated using an electron beam is then possible.03-31-2011
20110073757METHOD FOR OBTAINING CRYSTAL LATTICE MOIRE PATTERN AND SCANNING MICROSCOPE - A method for taking a crystal lattice moiré pattern of a crystal structure using a scanning microscope, and the scanning microscope implementing the method, arranges multiple virtual lattice points periodically corresponding to the crystal structure and an orientation thereof, on a scan plane of the crystal structure, detects signals from the multiple virtual lattice points, generated by an incident probe of the scanning microscope, and generates data of the crystal lattice moiré pattern, based on the detected signals.03-31-2011
20110068266METHOD AND DEVICE FOR VISUALIZING DISTRIBUTION OF LOCAL ELECTRIC FIELD - A method which visualizes the distribution of a local electric field formed near a sample 03-24-2011
20110062326Method and System for Acquisition of Confocal Stem Images - Method and system to obtain confocal STEM images. Arithmetic and control device extracts diffraction images respectively corresponding to successive pixel positions from the images stored in the memory, selects and corrects center positions of the extracted diffraction images, creates an image set having diffraction information in which the center positions of the diffraction images have been corrected and aligned, selects only innermost portions of the diffraction images of the created image set, and reproduces STEM images from the diffraction images, thus obtaining a confocal STEM image.03-17-2011
20120119085SPECIMEN POTENTIAL MEASURING METHOD, AND CHARGED PARTICLE BEAM DEVICE - The present invention has an object to perform specimen charge measurement or focusing at a high speed and with high precision also for a specimen in which fixed charge and induced charge may be mixedly present.05-17-2012
20120119084Method and Apparatus for Rapid Preparation of Multiple Specimens for Transmission Electron Microscopy - A method and apparatus for in-situ lift-out rapid preparation of TEM samples. The invention uses adhesives and/or spring-loaded locking-clips in order to place multiple TEM-ready sample membranes on a single TEM support grid and eliminates the use of standard FIB-assisted metal deposition as a bonding scheme. Therefore, the invention circumvents the problem of sputtering from metal deposition steps and also increases overall productivity by allowing for multiple samples to be produced without opening the FIB/SEM vacuum chamber.05-17-2012
20100301211DUAL BEAM SYSTEM - A dual beam system provides for operation of a focused ion beam in the presence of a magnetic field from an ultra-high resolution electron lens. The ion beam is deflected to compensate for the presence of the magnetic field.12-02-2010
20100294930SCANNING CHARGED PARTICLE BEAMS - Methods are disclosed that include exposing, in direct succession, portions of a surface of a sample to a charged particle beam, the portions of the surface of the sample forming a row in a first direction, the charged particle beam having an average spot size fat the surface of the sample, each portion being spaced from its neighboring portions by a distance of at least din the first direction, and a ratio d/f being 2 or more.11-25-2010
20100294928LASER ATOM PROBES - An atom probe includes a specimen mount that can hold a specimen to be analyzed. A detector is spaced apart from the specimen mount. Between the detector and specimen mount Is a local electrode with an aperture. A laser is oriented to emit a laser beam toward the specimen mount at a nonzero angle with respect to the aperture plane, the aperture plane being oriented perpendicular to an ion travel path defined through the aperture between the specimen mount and detector.11-25-2010
20100243889FORMING AN IMAGE WHILE MILLING A WORK PIECE - Dual beam instruments, comprising a Scanning Electron Microscope (SEM) column for imaging and a Focused Ion Beam (FIB) column for milling, are routinely used to extract samples (lamellae) from semiconductor wafers. By observing the progress of the milling with the SEM column, end pointing of the milling process can be performed.09-30-2010
20100243888Apparatus and Method for Inspecting Samples - An inspection apparatus and method capable of well observing or inspecting a specimen contained in a liquid. The inspection apparatus has a film including first and second surfaces. Furthermore, the apparatus has a vacuum chamber for reducing the pressure in the ambient in contact with the second surface of the film, primary beam irradiation column connected with the vacuum chamber, and a shutter for partially partitioning the space between the film and the primary beam irradiation column within the vacuum chamber. A liquid sample is held on the first surface of the film. The primary beam irradiation column irradiates the sample. Backscattered electrons (a secondary beam) produced from the sample by the primary beam irradiation are directed at the shutter, producing secondary electrons (a tertiary signal).09-30-2010
20110248165SAMPLE HOLDER PROVIDING INTERFACE TO SEMICONDUCTOR DEVICE WITH HIGH DENSITY CONNECTIONS - A novel specimen holder for specimen support specimen support devices for insertion in electron microscopes. The novel specimen holder of the invention provides mechanical support for specimen support devices and as well as electrical contacts to the specimens or specimen support devices.10-13-2011
20100078554Structure and Method for Determining a Defect in Integrated Circuit Manufacturing Process - The present invention discloses a structure and a method for determining a defect in integrated circuit manufacturing process. Test keys are designed for the structure to be the interlaced arrays of grounded and floating conductive cylinders, and the microscopic image can be predicted to be an interlaced pattern of bright voltage contrast (BVC) and dark voltage contrast (DVC) signals for a charged particle beam imaging system. The system can detect the defects by comparing patterns of the detected VC signals and the predicted VC signals.04-01-2010
20090309022APPARATUS FOR INSPECTING A SUBSTRATE, A METHOD OF INSPECTING A SUBSTRATE, A SCANNING ELECTRON MICROSCOPE, AND A METHOD OF PRODUCING AN IMAGE USING A SCANNING ELECTRON MICROSCOPE - An object of the present invention provides an inspection apparatus and an inspection method which use an electron beam image to accurately detect a defect that is difficult to detect in an optical image, the apparatus and method also enabling prevention of a possible decrease in focus accuracy of an inspection image which affect the defect detection. To accomplish the object, the present invention includes a height measurement section which measures height of the electron beam irradiation position on the substrate after the substrate is loaded onto a movable stage, a height correction processing section which corrects the measured height, and a control section which adjusts a focus of the electron beam according to the height corrected by the height correction processing section, wherein a stage position set when the height measurement section measures the height differs from a stage position set when the substrate is irradiated with the electron beam, and the height correction processing section corrects a possible deviation in height resulting from movement from the stage position for the height measurement to the stage position for the electron beam irradiation.12-17-2009
20090001266ARRANGEMENT AND METHOD FOR COMPENSATING EMITTER TIP VIBRATIONS - The present invention provides a charged particle beam apparatus with a charged particle beam source including an emitter with an emitter tip; and supporting member for supporting the emitter. Further, the apparatus includes an emitter location-measuring device for repeatedly measuring the location of the emitter; and a deflector system for compensating variations in the location of the emitter.01-01-2009
20080315092Scanning probe microscopy inspection and modification system - A scanning probe microscopy (SPM) inspection and/or modification system which uses SPM technology and techniques. The system includes various types of microstructured SPM probes for inspection and/or modification of the object. The components of the SPM system include microstructured calibration structures. A probe may be defective because of wear or because of fabrication errors. Various types of reference measurements of the calibration structure are made with the probe or vice versa to calibrate it. The components of the SPM system further include one or more tip machining structures. At these structures, material of the tips of the SPM probes may be machined by abrasively lapping and chemically lapping the material of the tip with the tip machining structures.12-25-2008
20080315091IMAGING AND SENSING BASED ON MUON TOMOGRAPHY - Techniques, apparatus and systems for detecting particles such as muons for imaging applications. Subtraction techniques are described to enhance the processing of the muon tomography data.12-25-2008
20090127458Methods for Sample Preparation and Observation, Charged Particle Apparatus - In an SEM observation in a depth direction of a cross section processed by repeated FIB cross-sectioning and SEM observation to correct a deviation in an observation field of view and a deviation in focus, are corrected, the deviations occurring when a processed cross section moves in the depth direction thereof; information on a height and a tilt of a surface of cross section processing area is calculated before the processing, the above information is used, the deviation in a field of view and the deviation in focus in SEM observation, which correspond to an amount of movement of the cross section at a time of the processing, are predicted, and the SEM is controlled based on the predicted values.05-21-2009
20080308729Apparatus for inspection with electron beam, method for operating same, and method for manufacturing semiconductor device using former - A substrate inspection apparatus 12-18-2008
20110253893CHARGED PARTICLE BEAM DEVICE AND A METHOD OF OPERATING A CHARGED PARTICLE BEAM DEVICE - A charged particle beam device is provided, including: a charged particle beam source adapted to generate a charged particle beam on an axis; an optical aberration correction device and an objective lens device, which define a corrected beam aperture angle adjusted to reduce diffraction; and a charged particle beam tilting device; wherein the optical aberration correction device and the objective lens device are adapted to provide the charged particle beam with a beam aperture angle smaller than the corrected beam aperture angle; and wherein the charged particle beam tilting device is adapted to provide a beam tilt angle which is equal or less than the corrected beam aperture angle. Further, a method of operating a charged particle beam device is provided.10-20-2011
20080230696SURFACE TREATMENT AND SURFACE SCANNING - Provides surface treatment devices, surface scanning devices, methods of operating a surface treatment device and methods of operating a surface scanning device. An area within a medium comprises at least one sharpening location for sharpening a tip of a probe mechanically. The tip is conically shaped with a radius of an apex smaller than 100 nm. In the case of the surface treatment device the probe is designed for altering the surface of the medium. In the case of the surface scanning device the probe is designed for scanning the medium. The sharpening location is suited for sharpening the tip mechanically. For that purpose the probe and the medium are being moved relative to each other such that the tip is located in the sharpening location. Then the probe and/or the medium are moved relative to each other such, that the tip is mechanically sharpened.09-25-2008
20120199739SCANNING CHARGED PARTICLE BEAM DEVICE AND METHOD FOR CORRECTING CHROMATIC SPHERICAL COMBINATION ABERRATION - Disclosed is a scanning charged particle beam apparatus equipped with an aberration corrector, contrived to eliminate resolution degradation in tilt observation by a chromatic third-order aperture aberration without relying on a specific optical system. A controller of the scanning charged particle beam apparatus provides a chromatic third-order aperture aberration measurement method relevant to tilt observation of a specimen. Further, the controller has a chromatic aberration control function relevant to tilt observation of a specimen. By means of the chromatic aberration control function, the controller controls a chromatic aberration to be positive or negative, rather than remaining at 0, in order to eliminate an image blur which occurs in a direction parallel to the specimen surface due to a chromatic third-order aperture aberration and a chromatic aberration at a tilt angle (t1) under observation and another tilt angle (−t1) axially opposite to the tilt angle.08-09-2012
20120199738IN-CHAMBER ELECTRON DETECTOR - A secondary particle detector 08-09-2012
20120199737SAMPLE PREPARATION - Disclosed are methods for preparing samples that include forming a first channel in a material by directing a first plurality of noble gas ions at the material, forming a second channel in the material by directing a second plurality of noble gas ions at the material, where the second channel is spaced from the first channel so that a portion of the material between channels has a mean thickness of 100 nm or less, and detaching the portion from the material to yield the sample.08-09-2012
20080203296Transmission Electron Microscope Provided with Electronic Spectroscope - In order to correct measurement magnification and measurement position of a spectral image with high efficiency and with high accuracy using an electronic spectroscope and a transmission electron microscope regarding the spectral image formed in two orthogonal axes which are an amount of energy loss axis and a measurement position information axis; a method for correcting magnification and position and a system for correcting magnification and position, both of which are capable of correcting measurement magnification and measurement position of a spectral image with high efficiency and with high accuracy using an electronic spectroscope and a transmission electron microscope regarding the spectral image formed in two orthogonal axes which are an amount of energy loss axis and a measurement position information axis, are provided.08-28-2008
20080203295DEFORMATION METHOD OF NANOMETER SCALE MATERIAL USING PARTICLE BEAM AND NANO TOOL THEREBY - The present invention relates to a deformation method of nanometer-scale material using a particle beam and a nano-tool thereby. The deformation method of the nanometer-scale material using the particle beam according to the present invention is characterized in that the nanometer-scale material is bent toward a direction of the particle beam by irradiating the particle beam on the nanometer-scale material.08-28-2008
20080203298Electrostatic Charge Measurement Method, Focus Adjustment Method, And Scanning Electron Microscope - The present invention aims to provide a method and a device of capable of suppressing error in electrostatic charge amount or defocus on the basis of electrostatic charge storage due to electron beam scanning when measuring the electrostatic charge amount of the sample or a focus adjustment amount by scanning the electron beam.08-28-2008
20100320382HIGH THROUGHPUT SEM TOOL - A multi-beam scanning electron beam device (12-23-2010
20100320384METHOD OF ENHANCING DETECTION OF DEFECTS ON A SURFACE - A method that may be applied to imaging and identifying defects and contamination on the surface of an integrated circuit is described. An energetic beam, such as an electron beam, may be directed at a selected IC location having a layer of a solid, fluid, or gaseous reactive material formed over the surface. The energetic beam disassociates the reactive material in the region into chemical radicals that either chemically etch the surface preferentially, or deposit a thin layer of a conductive material over the local area around the energetic beam. The surface may be examined as various layers are selectively etched to decorate defects and/or as various layers are locally deposited in the area around the energetic beam. SEM imaging and other analytic methods may be used to identify the problem more easily.12-23-2010
20100320383METHOD FOR EXCITING A MOBILE ELEMENT OF A MICROSTRUCTURE - The invention pertains to a method for exciting a resonant element (12-23-2010
20100181478CHARGED PARTICLE BEAM ADJUSTING METHOD AND CHARGED PARTICLE BEAM APPARATUS - In an apparatus for obtaining an image by irradiating a charged particle beam on a specimen, a condition of the beam conditioned differently from vertical incidence as in the case of the beam being tilted is required to be adjusted. To this end, the apparatus has a controller for automatically controlling a stigmator, an objective lens and a deflector such that astigmatism is corrected, focus is adjusted and view filed shift is corrected. The controller has a selector for inhibiting at least one of the astigmatism correction, focus adjustment and FOV shift correction from being executed.07-22-2010
20110168889SCANNING ELECTRON MICROSCOPE, AN INTERFACE AND A METHOD FOR OBSERVING AN OBJECT WITHIN A NON-VACUUM ENVIRONMENT - An interface, a scanning electron microscope and a method for observing an object that is positioned in a non-vacuum environment. The method includes: generating an electron beam in the vacuum environment; scanning a region of the object with the electron beam while the object is located below an object holder; wherein the scanning comprises allowing the electron beam to pass through an aperture of an aperture array, pass through an ultra thin membrane that seals the aperture, and pass through the object holder; wherein the ultra thin membrane withstands a pressure difference between the vacuum environment and the non-vacuum environment; and detecting particles generated in response to an interaction between the electron beam and the object.07-14-2011
20110168888WEAK-LENS COUPLING OF HIGH CURRENT ELECTRON SOURCES TO ELECTRON MICROSCOPE COLUMNS - A dynamic transmission electron microscope (DTEM) according to one embodiment includes an electron gun positioned at a top of a column for emitting electrons; an accelerator for accelerating the electrons; a C07-14-2011
20110180707MICROSAMPLING APPARATUS AND SAMPLING METHOD THEREOF - A microsampling apparatus having a mechanism for enabling observation of a specimen and for contacting a potential-controllable conductive terminal with a sampling area and a sampling method thereof are provided. The mechanism includes an operation mechanism for precisely controlling, during the observation, a conductive terminal for contact with a periphery of the sampling area and movement of the terminal, a potential control mechanism for applying a voltage to the terminal, and a mechanism for coupling the terminal to ground and to the potential control mechanism. Contacting the terminal with a vicinity of the specimen allows charged particles that are created during the observation and sampling to escape via an earth lead. This makes it possible, in analysis preprocessing of a small insulator specimen of about 1 μm which causes device defects, to lessen electrification risks, thereby enabling sampling of only the target object without mixture of a surrounding base material.07-28-2011
20110260058CHARGED PARTICLE RADIATION DEVICE AND IMAGE CAPTURING CONDITION DETERMINING METHOD USING CHARGED PARTICLE RADIATION DEVICE - A charged particle radiation device wherein the position or the size of a FOV can be easily determined even if a number of measuring points are provided on a sample, and an image capturing condition determining method using the charged particle radiation device are provided. An image capturing condition determining method wherein the field of view of a charged particle radiation device is determined so as to include a plurality of measuring points, characterized in that whether or not the measuring points are overlapped with four sides of the field of view is judged; the field of view is moved so that the measuring points are moved to the inside or outside of the field of view; and the position of the field of view after being moved is determined as a position of the field of view of the charged particle radiation device, and a device to realize the method are proposed. Further, a method for judging whether or not the measuring points are overlapped with the four sides, and changing the size of the field of view so as not to overlap the measuring points with each side, and a device therefor are proposed.10-27-2011
20110260056AUXILIARY STAGE AND METHOD OF UTILIZING AUXILIARY STAGE - An auxiliary stage for holding an electron microscope specimen includes a bottom part and a supporting part . The bottom part includes a first top surface, and the supporting part includes a second top surface and a side surface. The supporting part is fixed on the first top surface, and the side surface of the supporting part is substantially perpendicular to the first top surface of the bottom part. Therefore, the auxiliary stage is in a shape of a reversed T. A slit is embedded in the second top surface of the supporting part. A specimen holder is mounted in the slit, and a specimen is fixed on the specimen holder.10-27-2011
20110260055Dynamic Focus Adjustment with Optical Height Detection Apparatus in Electron Beam system - The present invention generally relates to dynamic focus adjustment for an image system. With the assistance of a height detection sub-system, present invention provides an apparatus and methods for micro adjusting an image focusing according the specimen surface height variation by altering the field strength of an electrostatic lens between objective lens and sample stage/or a bias voltage applied to the sample surface. Merely by way of example, the invention has been applied to a scanning electron inspection system. But it would be recognized that the invention could apply to other system using charged particle beam as observation tool with a height detection apparatus.10-27-2011
20080217532METHOD AND APPARATUS FOR SETTING SAMPLE OBSERVATION CONDITION, AND METHOD AND APPARATUS FOR SAMPLE OBSERVATION - A method and apparatus for setting a sample observation condition and a method and apparatus for sample observation which allow sample observation by speedily and simply finding an optimum condition while suppressing damage to the sample are provided. The setting of a sample observation condition according to the present invention is realized by an electron beam apparatus acquiring a profile at a predetermined evaluation location of a sample under a reference observation condition, by a processing section judging whether or not the above described acquired profile is located within a predetermined setting range and setting an optimum observation condition to be used for sample observation based on this judgment result. More specifically, locations where the condition can be examined are registered beforehand first and then a jump is made to the corresponding location which is irradiated with an electron beam (hereinafter referred to as “predosing”) at a low magnification, the surface of the sample is charged, enlarged to an observation magnification and secondary electron information on the target location is obtained. After that, secondary electron information is obtained at any time while performing predosing, it is successively judged from the information whether the pattern bottom part can be observed/measured or whether or not the sample is destroyed and an optimum observation condition is thereby found.09-11-2008
20080217530Semiconductor inspection system and apparatus utilizing a non-vibrating contact potential difference sensor and controlled illumination - A method and system for identifying a defect or contamination on the surface of a semiconductor or in a semiconductor. The method and system involves providing a semiconductor with a surface, such as a semiconductor wafer, providing a non-vibrating contact potential difference sensor, providing a source of illumination with controllable intensity or distribution of wavelengths, using the illumination source to provide controlled illumination of the surface of the wafer under or near the non-vibrating contact potential sensor probe tip, using the non-vibrating contact potential difference sensor to scan the wafer surface during controlled illumination, generating data representative of changes in contact potential difference across the wafer surface, and processing that data to identify a pattern characteristic of a defect or contamination.09-11-2008
20090212211Electron Microscope System and Method for Evaluating Film Thickness Reduction of Resist Patterns - The invention provides a system for achieving detection and measurement of film thickness reduction of a resist pattern with high throughput which can be applied to part of in-line process management. By taking into consideration the fact that film thickness reduction of the resist pattern leads to some surface roughness of the upper surface of the resist, a film thickness reduction index value is calculated by quantifying the degree of roughness of the part corresponding to the upper surface of the resist on an electron microscope image of the resist pattern which has been used in the conventional line width measurement. The amount of film thickness reduction of the resist pattern is estimated by applying the calculated index value to a database previously made for relating a film thickness reduction index value to an amount of film thickness reduction of the resist pattern.08-27-2009
20110186734Electron microscope and specimen analyzing method - An electron microscope includes: an electron beam column for irradiating a specimen with an electron beam; a specimen stage that supports the specimen; a scattered electron detector for detected backscattered electrons released from the specimen; and a focused ion beam column for irradiating the specimen with a focused ion beam.08-04-2011
20100025577METHOD FOR THE PRODUCTION OF A SAMPLE FOR ELECTRON MICROSCOPY02-04-2010
20110215243METHOD FOR INSPECTING AND MEASURING SAMPLE AND SCANNING ELECTRON MICROSCOPE - As an aspect for realizing accurate observation, inspection, or measurement of the contact hole with large aspect ratio, a method and a device to scan a second electron beam after scanning a first electron beam to a sample to charge the sample are proposed wherein the beam diameter of the first electron beam is made larger than the beam diameter of the second electron beam.09-08-2011
20110215242Particle beam device and method for operation of a particle beam device - A particle beam device and a method for operation of a particle beam device are disclosed. The particle beam device has a sample chamber, a sample arranged in the sample chamber, a first particle beam column, a second particle beam column and at least one detector arranged in a first cavity in a first hollow body. The first cavity has a first inlet opening. The first particle beam column and the second particle beam column are arranged on one plane, while the detector is not arranged on that plane. At least one control electrode is arranged on the first particle beam column. The second particle beam column has a terminating electrode. A first hollow body voltage, a control electrode voltage and/or a terminating electrode voltage are/is chosen such that first interaction particles and/or second interaction particles enter the first cavity in the first hollow body through the first inlet opening.09-08-2011
20110215241Charged Particle Beam Detection Unit with Multi Type Detection Subunits - A detection unit of a charged particle imaging system includes a multi type detection subunit in the charged particle imaging system, with the assistance of a Wien filter (also known as an E×B charged particle analyzer). The imaging system is suitable for a low beam current, high resolution mode and a high beam current, high throughput mode. The unit can be applied to a scanning electron inspection system as well as to other systems that use a charged particle beam as an observation tool.09-08-2011
20100019146Specimen Holder, Specimen Inspection Apparatus, and Specimen Inspection Method - Specimen holder, specimen inspection apparatus, and specimen inspection method for observing or inspecting a specimen consisting of cultured cells. The specimen holder has a body portion and a film. The body portion has a specimen-holding surface opened to permit access from the outside. The film has a first surface forming the specimen-holding surface. The specimen disposed on the first surface of the film can be irradiated with a primary beam for observation or inspection of the specimen via the film. A region coated with an electrically conductive film is formed on the bottom surface of the body portion facing away from the specimen-holding surface. An optically transparent region not coated with the electrically conductive film is also formed on the bottom surface.01-28-2010
20100019148INSPECTION APPARATUS FOR CIRCUIT PATTERN - In a circuit pattern inspection apparatus, while an electron beam is irradiated onto a surface of a substrate having a plurality of chips where circuit patterns have been formed, a signal produced from the irradiated substrate is detected so as to form an image, and then, the formed image is compared with another image in order to detect a defect on the circuit patterns. Before the electron beam is irradiated onto either the chip or the plurality of chips so as to acquire the image for an inspection purpose, an electron beam is previously irradiated onto the region to be irradiated, so that charging conditions of the substrate to be inspected are arbitrarily controlled.01-28-2010
20100019147METHOD AND APPARATUS FOR CHARGED PARTICLE BEAM INSPECTION - A charged particle beam inspection apparatus comprises: an electron gun for irradiating an electron beam onto a sample; a detector for detecting a signal obtained from the sample; an image processor for forming an image from the signal obtained from the detector, and an energy controller for controlling the beam energy of the electron beam to be irradiated onto the sample. An identical charged particle beam inspection apparatus carries out a plurality of types of inspections. An inspection apparatus of a projection type may be applied thereto. A pattern defect inspection, a foreign material inspection, and an inspection for a defect in a multilayer are carried out. Beam energies E01-28-2010
20120145895Method of Processing of an Object - A method of processing of an object comprises scanning a particle beam across a surface of the object and detecting electrons emerging from the object due to the scanning; determining a height difference between the surface of the object and a predetermined surface for each of plural of locations on the surface of the object based on the detected electrons; determining a processing intensity for each of the plural locations on the surface of the object based on the determined height differences; and directing a particle beam to the plural locations based on the determined processing intensities, in order to remove material from or deposit material on the object at the plural locations.06-14-2012
20080277581In-situ BWR and PWR CRUD flake analysis method and tool - The invention provides a method and tool to perform an analysis of CRUD on a nuclear fuel rod. The method recites providing a nuclear fuel rod with a layer of CRUD on an exterior of the fuel rod, scraping the CRUD from the fuel rod with a CRUD scraping tool and collecting CRUD flakes from the CRUD scraping tool. The method also provides for sorting the CRUD flakes into particle fractions, and analyzing the CRUD with a scanning electron microscope, wherein the scraping tool has a blade with a rigidity that is matched to an anticipated CRUD deposit shear strength.11-13-2008
20120068066DISPLACEMENT MEASURING DEVICE AND DISPLACEMENT MEASURING METHOD - A displacement measuring device is provided which can directly measure a position and shape of a target object with high precision even if the target object has a minute shape with a high aspect ratio. A displacement measuring device 100 for measuring a change in a distance to a target object S includes a light irradiation section 10 configured to irradiate, with laser light, a light transmissive particle 50 provided at a predetermined distance from a surface of the target object S, a movement section 20 configured to move, relative to the target object S, the particle 50 held in an optical standing wave field generated by interference between light transmitted from the particle 50 and light reflected from the target object S, a sensing section 30 configured to sense a movement signal occurring when the particle 50 relatively moves against confining force caused by the optical standing wave field, and a calculation section 40 configured to derive the change in the distance to the target object S based on the movement signal.03-22-2012
20110133080CHARGED PARTICEL BEAM APPARATUS AND METHODS FOR CAPTURING IMAGES USING THE SAME - The present invention provides a charged particle beam apparatus used to measure micro-dimensions (CD value) of a semiconductor apparatus or the like which captures images for measurement. For the present invention, a sample for calibration, on which a plurality of polyhedral structural objects with known angles on surfaces produced by the crystal anisotropic etching technology are arranged in a viewing field, is used. A beam landing angle at each position within a viewing field is calculated based on geometric deformation on an image of each polyhedral structural object. Beam control parameters for equalizing the beam landing angle at each position within the viewing field are pre-registered. The registered beam control parameters are applied according to the position of the pattern to be measured within the viewing field when performing dimensional measurement. Accordingly, the present invention provides methods for reducing the variation in the CD value caused by the variation in the electron beam landing angle with respect to the sample with an equal beam landing angle and methods for reducing the instrumental error caused by the difference in the electron beam landing angle between apparatuses.06-09-2011
20120145896GAS DELIVERY IN A MICROSCOPE SYSTEM - Disclosed are systems and methods for applying a voltage gradient to a gas delivery system, delivering a gas through a length of the gas delivery system having the voltage gradient, the gas having a pressure-distance product of less than about 1×01006-14-2012
20110303843SAMPLE OBSERVING METHOD AND SCANNING ELECTRON MICROSCOPE - Provided is a sample observing method wherein the effect on throughput is minimized, and a pattern profile can be obtained at high accuracy even in a complicated LSI pattern, regardless of the scanning direction of an electron beam. In the sample observing method, the presence or absence of an edge parallel to a scanning direction (12-15-2011
20090084952Apparatus and method for scanning capacitance microscopy and spectroscopy - An apparatus and technique for measuring the electrical capacitance between a conducting tip of a scanning probe microscope and a sample surface is described. A high frequency digital vector network analyzer is connected to the probe tip of the cantilever of an atomic force microscope, and data collection is coordinated by a digital computer using digital trigger signals between the AFM controller and the vector network analyzer. Methods for imaging tip-sample capacitance and spectroscopic measurements at a single point on the sample are described. A method for system calibration is described.04-02-2009
20120305765PARTICLE BEAM DEVICE AND METHOD FOR USE IN A PARTICLE BEAM DEVICE - A particle beam device includes a movable carrier element with at least one receiving element for receiving a specimen and in which the receiving element is situated on the carrier element. In various embodiments, the receiving element may be situated removably on the carrier element and/or multiple receiving elements may be situated on the carrier element in such a way that a movement of the carrier element causes a movement of the multiple receiving elements in the same spatial direction or around the same axis. The carrier element may be movable in three spatial directions situated perpendicular to one another and rotatable around a first axis which is parallel to an optical axis of the particle beam device and around a second axis which is situated perpendicular to the optical axis. A method for using the particle beam device in connection with specimen study and preparation is also disclosed.12-06-2012
20120305764METHOD OF DETERMINING THE CONCAVITY AND CONVEXITY ON SAMPLE SURFACE, AND CHARGED PARTICLE BEAM APPARATUS - A method and apparatus suitable for determining the concavity and convexity of line and space patterns formed on a sample. A profile is formed based on a charged-particle beam scan, the profile having a peak. When one foot portion of the peak converges more gradually than the other foot portion, a portion of the sample corresponding to the one foot portion is determined to be a convex portion. Alternatively, when one foot portion of the peak converges more steeply than the other foot portion, a portion of the sample corresponding to the one foot portion is determined to be a concave portion.12-06-2012
20120305763SYSTEM AND METHOD FOR COMPENSATING FOR MAGNETIC NOISE - A system and method for noise compensation of a charged particle beam location includes one or more sensors that are spaced apart from each other for sensing magnetic noises within at least one predefined frequency band thereby to provide magnetic noise measurements with synchronous detection of the location of a charged particle beam. Based on the magnetic noise measurements and on relationships between values of the magnetic noises and particle beam location errors, magnetic noise compensations signals are generated. An object is then scanned by a particle beam in response to a desired particle beam scan pattern and the magnetic noise compensation signals.12-06-2012
20120037802Distributed Potential Charged Particle Detector - A charged particle beam system for imaging and processing targets is disclosed, comprising a charged particle column, a secondary particle detector, and a secondary particle detection grid assembly between the target and detector. In one embodiment, the grid assembly comprises a multiplicity of grids, each with a separate bias voltage, wherein the electric field between the target and the grids may be adjusted using the grid voltages to optimize the spatial distribution of secondary particles reaching the detector. Since detector lifetime is determined by the total dose accumulated at the area on the detector receiving the largest dose, detector lifetime can be increased by making the dose into the detector more spatially uniform. A single resistive grid assembly with a radial voltage gradient may replace the separate grids. A multiplicity of deflector electrodes may be located between the target and grid to enhance shaping of the electric field.02-16-2012
20130146764INCOHERENT TRANSMISSION ELECTRON MICROSCOPY - A transmission electron microscope includes an electron beam source to generate an electron beam. Beam optics are provided to converge the electron beam. An aberration corrector corrects the electron beam for at least a spherical aberration. A specimen holder is provided to hold a specimen in the path of the electron beam. A detector is used to detect the electron beam transmitted through the specimen. The transmission electron microscope may operate in an incoherent mode and may be used to locate a sequence of objects on a molecule.06-13-2013
20110315876Blocking Member for Use in the Diffraction Plane of a TEM - The invention relates to a blocking member to be placed in the diffraction plane of a TEM. It resembles the knife edge used for single sideband imaging, but blocks only electrons deflected over a small angle. As a result the Contrast Transfer Function of the TEM according to this invention will equal that of a single sideband microscope at low frequencies and that of a normal microscope for high frequencies. Preferable the highest frequency blocked by the blocking member is such that a microscope without the blocking member would show a CTF of 0.5.12-29-2011
20100181477Systems, Methods, and Apparatus for Structural Health Monitoring - Embodiments can provide systems, methods, and apparatus for monitoring the structural health of one or more structures and associated materials. For example, a structural health monitoring system can be provided. The system can include a structure to be monitored, the structure including a material with multiple triboluminescent sensors and multiple nano-optoelectronic members; and an analyzer in signal communication with the nano-optoelectronic members.07-22-2010
20120001068Method of Electron Diffraction Tomography - The invention relates to a method for electron diffraction tomography in a Transmission Electron Microscope. Known methods involve using Scanning Transmission Electron Microscope, and use the scanned beam for STEM diffraction. The invention proposes to form the diffraction patterns with a stationary beam with a diameter slightly larger than the crystal, as a result of which a TEM without STEM unit can be used. Finding the crystal is done in TEM mode. Advantages of the method according to the invention are: a TEM without scanning unit can be used, and the diffraction volume is not depending on the orientation of the crystal, as the whole crystal is illuminated while obtaining the diffraction pattern.01-05-2012
20110155907IDENTIFICATION OF PLATINUM GROUP MINERALS - A PGM is identified by subjecting a sample mineral to a scanning electron microscope to produce an energy dispersive spectrum for the sample and comprising the amplitude of the spectrum in a single channel to data from a reference table of normalised spectra of different PGM species.06-30-2011
20110155906TRANSMISSION ELECTRON MICROSCOPE APPARATUS COMPRISING ELECTRON SPECTROSCOPE, SAMPLE HOLDER, SAMPLE STAGE, AND METHOD FOR ACQUIRING SPECTRAL IMAGE - A transmission electron microscope apparatus, a sample holder and a sample stage and a method for acquiring spectral images as well are provided which can acquire spectral images at a time from a plurality of samples and measure highly accurate chemical shifts from electron energy loss spectra extracted from the spectral images.06-30-2011
20110155905SPECIMEN OBSERVATION METHOD AND DEVICE, AND INSPECTION METHOD AND DEVICE USING THE METHOD AND DEVICE - A technique capable of improving the ability to observe a specimen using an electron beam in an energy region which has not been conventionally given attention is provided. This specimen observation method comprises: irradiating the specimen with an electron beam; detecting electrons to be observed which have been generated and have obtained information on the specimen by the electron beam irradiation; and generating an image of the specimen from the detected electrons to be observed. The electron beam irradiation comprises irradiating the specimen with the electron beam with a landing energy set in a transition region between a secondary emission electron region in which secondary emission electrons are detected and a mirror electron region in which mirror electrons are detected, thereby causing the secondary emission electrons and the mirror electrons to be mixed as the electrons to be observed. The detection of the electrons to be observed comprises performing the detection in a state where the secondary emission electrons and the mirror electrons are mixed. Observation and inspection can be quickly carried out for a fine foreign material and pattern of 100 nm or less.06-30-2011
20110155904Method and Apparatus for Pattern Position and Overlay Measurement - Systems and methods using imaged device patterns to measure overlay between different layers in a semiconductor manufacturing process, such as a double-patterning process. Images of pattern features are acquired by scanning electron microscopy. The position of a patterning layer is determined using positions of pattern features for the patterning layer in the images. A relative position of each patterning layer with respect to other pattern features or patterning layers is determined in vector form based on the determined pattern positions. Overlay error is determined based on a comparison of the relative position with reference values from design or simulation. Overlay can be measured with high precision and accuracy by utilizing pattern symmetry.06-30-2011
20110089322ACHROMATIC BEAM DEFLECTOR, ACHROMATIC BEAM SEPARATOR, CHARGED PARTICLE DEVICE, METHOD OF OPERATING AN ACHROMATIC BEAM DEFLECTOR, AND METHOD OF OPERATING AN ACHROMATIC BEAM SEPARATOR - An achromatic beam separator device for separating a primary charged particle beam from another charged particle beam and providing the primary charged particle beam on an optical axis (04-21-2011
20120061565CHARGED PARTICLE BEAM DEVICE AND SAMPLE OBSERVATION METHOD - Disclosed is a charged particle beam device, wherein multibeam secondary electron detectors (03-15-2012
20120061564SURFACE ANALYZER OF OBJECT TO BE MEASURED AND ANALYZING METHOD - A surface analyzer 03-15-2012
20120153145SCANNING ELECTRON MICROSCOPE AND SAMPLE OBSERVATION METHOD - A scanning electron microscope of the present invention performs scanning by changing a scanning line density in accordance with a sample when an image of a scanned region is formed by scanning a two-dimensional region on the sample with an electron beam or is provided with a GUI having sample information input means which inputs information relating to the sample and display means which displays a recommended scanning condition according to the input and performs scanning with a scanning line density according to the sample by selecting the recommended scanning condition. As a result, in observation using a scanning electron microscope, a suitable scanning device which can improve contrast of a profile of a two-dimensional pattern and suppress shading by suppressing the influence of charging caused by primary charged particle radiation and by improving a detection rate of secondary electrons and a scanning method are provided.06-21-2012
20120153144SYSTEM AND METHOD FOR PRODUCING AND USING MULTIPLE ELECTRON BEAMS WITH QUANTIZED ORBITAL ANGULAR MOMENTUM IN AN ELECTRON MICROSCOPE - A system and method for using electron beams with engineered phase dislocations as scanned probes in electron probe beam instruments such as scanning transmission electron microscopes. These types of electron beams have unique properties and can provide better information about a specimen than conventional electron beams. Phase dislocations may be created based on a pattern disposed on a nanoscale hologram, which may be placed in the electron optical column of the electron probe beam instrument. When an electron beam from the instrument is directed onto the hologram, phase dislocations may be imprinted onto the electron beam when electrons are diffracted from these holograms. For example, electron probe beams with spiral phase dislocations may occur. These spiral phase dislocations are formed using a hologram with a fork-patterned grating. Spiral phase dislocations may be used to provide magnetic contrast images of a specimen.06-21-2012
20120006984METHOD OF CONTROLLING PARTICLE ABSORPTION ON A WAFER SAMPLE BEING INSPECTED BY A CHARGED PARTICLE BEAM IMAGING SYSTEM - A method of controlling particle absorption on a wafer sample and charged particle beam imaging system thereof prevents particle absorption by grounding the wafer sample and kept electrically neutral during the transfer-in and transfer-out process.01-12-2012
20100051805ION BEAM STABILIZATION - Ion microscope methods and systems are disclosed. In general, the systems and methods provide high ion beam stability.03-04-2010
20120012747Contrast for Scanning Confocal Electron Microscope - A scanning confocal transmission electron microscope includes a descan deflector and a corrector below the sample. The microscope uses a detector that is preferably significantly larger than the resolution of the microscope and is positioned in the real image plane, which provides improved contrast, particularly for light elements.01-19-2012
20120104250Microscope System, Method for Operating a Charged-Particle Microscope - A method of operating a charged-particle microscope, the method comprising: recording a first image of a first region of an object in a first setting; recording a second image of a second region of the object using the charged-particle microscope in a second setting; reading a third image of a third region using the charged-particle microscope, wherein the first and second regions are contained at least partially within the third region; displaying a representation of the first image at least partly within the displayed third image, wherein the representation of the first image includes a first indicator which is indicative of the first setting; displaying a representation of the second image at least partly within the displayed third image, wherein the representation of the second image includes a second indicator which is indicative of the second setting, and wherein the displayed second indicator is different from the displayed first indicator.05-03-2012
20120205537MULTIPLE-POLE ELECTROSTATIC DEFLECTOR FOR IMPROVING THROUGHPUT OF FOCUSED ELECTRON BEAM INSTRUMENTS - One embodiment relates to a focused electron beam imaging apparatus. The apparatus includes an electron beam column, an electron source, a gun lens, a pre-scanning deflector, a main scanning deflector, an objective lens, and a detector. The pre-scanning deflector comprises a 12-pole electrostatic deflector which is configured to controllably deflect the electron beam away from the optical axis of the electron beam column. Another embodiment relates to a method of scanning an electron beam over a target substrate in a focused electron beam imaging instrument. The electron beam is controllably deflected, without third-order deflection aberrations, away from an optical axis of an electron beam column using a pre-scanning deflector. The electron beam is then controllably deflected back towards the optical axis using a main scanning deflector so that the electron beam passes through a center of an objective electron lens. Other embodiments, aspects and features are also disclosed.08-16-2012
20110049364REDUCING PARTICLE IMPLANTATION - Methods disclosed herein include: (a) forming a channel in a sample, the channel extending one micron or more along a direction oriented at an angle to a surface of the sample; (b) exposing a portion of the sample above the channel to a particle beam to cause particles to leave the surface of the sample; and (c) forming an image of the sample based on particles that leave the surface.03-03-2011
20110049363METHOD AND DEVICE FOR MEASURING ELECTRON DIFFRACTION OF A SAMPLE - The invention relates to a method and a device for measuring electron diffraction of a sample, including the steps of illuminating the sample with an incident electron beam which is deflected from a sample axis to hit the sample at an angle of incidence relative to the sample axis, at least partially subjecting the incident electron beam to diffraction by the sample, subjecting the diffracted and undiffracted electron beams transmitted through the sample to a partial deflection compensation, detecting the intensity of the diffracted and undiffracted electron beams transmitted through the sample in dependency on the angle of incidence and a scattering angle of the diffracted beam. The invention also relates to a computer program for controlling a transmission electron microscope for carrying out the inventive method.03-03-2011
20120205538PARTICLE BEAM DEVICE AND METHOD FOR PROCESSING AND/OR ANALYZING A SAMPLE - A particle beam device and method for processing and/or for analyzing a sample are provided. A sample carrier is arranged at a first position, in which a sample surface is oriented parallel to a first beam axis of a first particle beam column. The sample carrier is rotatable from the first position into a second position, in which the sample surface is oriented perpendicular to a second beam axis of a second particle beam column. The first and second beam axes intersect at a coincidence point. In the first position a distance between the coincidence point and the first particle beam column is greater than a distance between the sample surface and the first particle beam column. In the second position a distance between the coincidence point and the second particle beam column is greater than a distance between the sample surface and the second particle beam column.08-16-2012
20090166535TRANSMISSION ELECTRON MICROSCOPY ANALYSIS METHOD USING FOCUSED ION BEAM AND TRANSMISSION ELECTRON MICROSCOPY SAMPLE STRUCTURE - A TEM (transmission electron microscopy) analysis method using FIB (focused ion beam) includes dividing a TEM sample into a plurality of analysis regions; determining an FIB beam current for each of the analysis regions; and performing FIB milling on each of the analysis regions by using the determined FIB beam current. Further, the method includes loading the TEM sample onto a TEM sample grid and transmitting a TEM electron beam on the TEM sample to perform the TEM analysis.07-02-2009
20100096549Sample Inspection Apparatus, Sample Inspection Method and Sample Inspection System - Sample inspection apparatus, sample inspection method, and sample inspection system are offered which can give a stimulus to a sample held on a film when the sample is inspected by irradiating it with a primary beam (e.g., an electron beam or other charged-particle beam) via the film. The apparatus has the film, a vacuum chamber, primary beam irradiation column, signal detector, and a controller for controlling the operations of the beam irradiation column and signal detector. The sample is held on a first surface of the film opened to permit access to the film. The vacuum chamber reduces the pressure of the ambient in contact with a second surface of the film. The irradiation column irradiates the sample with the primary beam via the film from the second surface side. The detector detects a secondary signal produced from the sample in response to the irradiation.04-22-2010
20120160999HIGH COLLECTION EFFICIENCY X-RAY SPECTROMETER SYSTEM WITH INTEGRATED ELECTRON BEAM STOP, ELECTRON DETECTOR AND X-RAY DETECTOR FOR USE ON ELECTRON-OPTICAL BEAM LINES AND MICROSCOPES - An X-ray spectrometer systems and methods are provided for implementing signal detection for use on electron-optical beam lines and microscopes. The X-ray Spectrometer System (XSS) includes an X-ray detector (XD) measuring the X-ray signal and positioned proximate to a specimen. An environmental isolation window together with an electron beam stop is disposed between XD and the specimen. The environmental isolation window and the electron beam stop protect XD from electrons directly transmitted through the specimen. An electron detector is located between the electron beam stop and the specimen allowing the measurement of scattered electrons. The XD measures an X-ray signal in the X-ray spectrometer system.06-28-2012
20100288925High-density FIB-SEM tomography via real-time imaging - A method and an apparatus are for three-dimensional tomographic image generation in a scanning electron microscope system. At least two longitudinal marks are provided on the top surface of the sample which include an angle therebetween. In consecutive image recordings, the positions of these marks are determined and are used to quantify the slice thickness removed between consecutive image recordings.11-18-2010
20100288924COMPOSITE FOCUSED ION BEAM DEVICE, PROCESS OBSERVATION METHOD USING THE SAME,AND PROCESSING METHOD - A composite focused ion beam device includes a first ion beam irradiation system 11-18-2010
20100288923DISCHAGING METHOD FOR CHARGED PARTICLE BEAM IMAGING - A layer of conductive or semi-conductive material is formed on a surface of a sample and then the sample, when being charged particle beam imaged, is electrically coupled with an object having a large charge-receiving or charge-storage capacity (e.g., capacitance). Hence, the charging on the sample surface is removed and released quickly by the layer. The layer is then removed by reacting it with a predefined agent. The reaction forms a gaseous product which does not form a physical or chemical bond to the sample surface.11-18-2010
20100308219METHOD FOR CREATING S/TEM SAMPLE AND SAMPLE STRUCTURE - An improved method and apparatus for S/TEM sample preparation and analysis. Preferred embodiments of the present invention provide improved methods for TEM sample creation, especially for small geometry (<100 nm thick) TEM lamellae. A novel sample structure and a novel use of a milling pattern allow the creation of S/TEM samples as thin as 50 nm without significant bowing or warping. Preferred embodiments of the present invention provide methods to partially or fully automate TEM sample creation, to make the process of creating and analyzing TEM samples less labor intensive, and to increase throughput and reproducibility of TEM analysis.12-09-2010
20120126115SPECIMEN HOLDER HAVING ALIGNMENT MARKS - For the microscopy of an object or a specimen with a combination of optical microscopy and particle beam microscopy, an electrically conducting specimen carrier (05-24-2012
20120126116PATTERN SHAPE SELECTION METHOD AND PATTERN MEASURING DEVICE - The present invention has an object to propose a method and an apparatus for selecting a pattern shape, wherein, when estimating a shape based on comparison between an actual waveform and a library, the method and the apparatus can appropriately estimate the shape. As an embodiment to achieve the object, a method and an apparatus for selecting a pattern shape by comparing an obtained shape with pattern shapes memorized in the library are proposed, wherein plural pieces of waveform information are obtained under a plurality of waveform acquiring conditions based on radiation of a charged particle beam onto a specimen; and a pattern shape memorized in the library is selected by referring, with respect to the plural pieces of waveform information, to a library memorizing plural pieces of waveform information acquired under different waveform acquiring conditions for each of a plurality of pattern shapes.05-24-2012
20120211652Charged Particle Beam Device, Position Specification Method Used for Charged Particle Beam Device, and Program - Observation using an FIB image is enabled without causing any damage to a designated region. To this end, an ion beam scanning-prohibited region is set in a sample by using an image acquired by a charged particle beam other than an ion beam, or an image prepared as external data as a peripheral image including the designated region of a sample. Thereafter, the image used to set the ion beam scanning-prohibited region is exactly superimposed on an FIB image acquired for regions except the ion beam scanning-prohibited region, thereby forming an image including the ion beam scanning-prohibited region on which ion beam scanning has not been performed.08-23-2012
20090057554METHOD FOR PHOTORESIST CHARACTERIZATION AND ANALYSIS - A method for photoresist characterization includes forming a photoresist on a supportive structure; and characterizing the photoresist using a metrology tool selected from the group consisting of a transmission electron microscope (TEM), a scanning electron microscope (SEM), an atomic force microscope (AFM), a small angle X-ray scattering (SAXS) and a laser diffraction particle analyzer.03-05-2009
20100051804FAST WAFER INSPECTION SYSTEM - A charged particle beam device is provided including a particle source emitting a primary particle beam, a secondary particle beam generated by the impingement of the primary particle beam on the sample, a detection unit for detecting the secondary particle beam, the detector having at least two detector channels, and a distribution deflecting device for deflecting the secondary particle beam in a chronological sequence. Further, a detection assembly for a fast wafer inspection system is provided including a distribution deflecting device for distributing a secondary particle beam in a chronological sequence and a detector for detecting the secondary particle beam, the detector having multiple detector channels. Further, a method of operating a particle beam device with chronological resolution is provided.03-04-2010
20120256084ELECTRON BEAM DRIFT DETECTION DEVICE AND METHOD FOR DETECTING ELECTRON BEAM DRIFT - An electron beam drift detection device and a method for detecting electron beam drift are provided in which the method includes placing a predetermined characteristic identification pattern on a surface of a workpiece; emitting an electron beam, and focusing and deflecting the electron beam such that the focused and deflected electron beam scans the surface of the workpiece and the characteristic identification pattern; detecting backscattered electrons and secondary electrons; and detection signals; and receives the receiving detection signals and performs performing an image process on the detection signals to obtain an electronic image of the characteristic identification pattern, and measuring a drift degree by comparing the electronic image with the predetermined shape of the characteristic identification pattern.10-11-2012
20120256085Method of protecting a radiation detector in a charged particle instrument - The invention relates to a Method of protecting a direct electron detector (10-11-2012
20120256086METHOD AND APPARATUS FOR DETERMINING A FLUID DENSITY - The invention provides an apparatus and method for measuring a property of a gas, such as the amount of liquid in a stream of the gas. The apparatus comprises a source of beta particles (10-11-2012
20100019145Apparatus of Measuring the Orientation Relationship Between Neighboring Grains Using a Goniometer in a Transmission Electron Microscope and Method for Revealing the Characteristics of Grain Boundaries - An apparatus and method for measuring the crystallographic orientation relationship of neighboring grains and the characteristics of grain boundaries using a goniometer of a transmission electron microscope are disclosed to check the orientation relationship between two crystals and the characteristics of grain boundaries with a small error in real time. An apparatus for measuring the orientation relationship between neighboring grains and the characteristics of grain boundaries by using a goniometer of a transmission electron stereoscope, the apparatus comprising a goniometer mounted at a transmission electron microscope and a measurement unit for revealing the characteristics of grain boundaries of a specimen by linear-algebraically interpreting the relationship between crystal axes and tilt axes of the specimen using the goniometer.01-28-2010
20120217392PATTERN-HEIGHT MEASURING APPARATUS AND PATTERN-HEIGHT MEASURING METHOD - An electron beam is irradiated on an observation region of a sample surface. An image (SEM image) is acquired based on a detection signal of secondary electrons from a detector disposed obliquely above the observation region. A length of a shadow of a pattern appearing in the image is detected. Then, a height H of the pattern is calculated by a formula H=L× tan θ on the basis of the detected length L of the shadow and an apparent angle θ of the detector to the sample surface obtained in advance. An intensity distribution of the secondary electrons on a line orthogonal to an edge of the pattern is extracted, and the length L of the shadow of the pattern is obtained as a distance between two points where a recess portion of the intensity distribution intersects a predetermined threshold.08-30-2012
20120248309SPECIMEN GRID HOLDER AND FOCUSED ION BEAM SYSTEM OR DUAL BEAM SYSTEM HAVING THE SAME - A specimen grid holder includes a base and two holding members disposed thereon. Each holding member has at least one inserting portion and at least one holding portion formed adjacently. The specimen grid can be inserted into the inserting portion and moved to the holding portion for securement. The two holding members can be used to secure specimens at different orientations for analyses.10-04-2012
20120074319METHOD AND APPARATUS FOR REVIEWING DEFECTS - A method of inspecting defects of a sample on a movable table includes a first step for, on a basis of position information of the defects which is previously detected by an other inspection system, driving the table so that the defects come into a viewing field of an optical microscope having a focus which is adjusted, a second step for re-detecting the defects to obtain a first detection result, a third step for correcting the position information of defects on a basis of position information of the re-detected defects, and a fourth step for reviewing the defects whose position information is corrected to obtain a second detection result. At the second step, re-detecting is performed using reflection light or scattered light from the sample which passes an optical filter which includes a light shielding portion and a light transmitting portion.03-29-2012
20120074318METHODS AND SYSTEMS FOR HEATING A TIP APEX OF A CHARGED PARTICLE SOURCE - Systems and methods for heating an apex of a tip of a charged particle source are disclosed. The charged particle source can be, for example, a gas ion source. The systems can include a detector configured to detect light generated by the tip apex, and a controller coupled with the charged particle source and the detector so that the controller can control heating of the tip apex based on the light detected by the detector.03-29-2012
20120074317Particle Beam Microscope and Method for Operating the Particle Beam Microscope - A method for operating a particle beam microscope comprising detecting light rays or particles which emanate from a structure, wherein the structure comprises at least one of: at least a portion of a surface of an object and at least a portion of a surface of an object holder of the particle beam microscope; generating a surface model of the structure depending on the at least one of the detected light rays and the particles; determining a position and an orientation of the surface model of the structure relative to the object region; determining a measurement location relative to the surface model of the structure; and positioning the object depending on the generated surface model of the structure, depending on the determined position and orientation of the surface model of the structure, and depending on the determined measurement location.03-29-2012
20120074316ELECTRO-OPTICAL INSPECTION APPARATUS AND METHOD WITH DUST OR PARTICLE COLLECTION FUNCTION - An electro-optical inspection apparatus is provided that is capable of preventing adhesion of dust or particles to the sample surface as much as possible. A stage (03-29-2012
20120074315High resolution energy-selecting electron beam apparatus - A high resolution energy-selecting electron beam apparatus and method for improving the energy resolution of electron-optical systems by restricting the energy range of admitted electrons, and optionally also for improving the spatial resolution by correcting chromatic and geometric aberrations. The apparatus comprises a plurality of magnetic or electrostatic prisms that disperse an electron beam according to the energies of the electrons into an energy spectrum, a plurality of magnifying lenses such as electromagnetic or electrostatic quadrupoles that increase the energy dispersion of the energy spectrum, an energy-selecting slit that selects a desirable range of energies of the electrons, and optionally also sextupole, octupole and higher-order lenses that correct chromatic and geometric aberration of the electron-optical system. The apparatus also comprises further magnetic or electrostatic prisms and electron lenses arranged such that the energy dispersion of the electron beam emerging from the apparatus is cancelled.03-29-2012
20120312987ULTRAFAST ELECTRON DIFFRACTION DEVICE - An ultrafast electron diffraction device for irradiating a sample with a bunch of electrons in an ultrashort pulse in order to perform an ultrafast analysis of the sample. The ultrafast electron diffraction device includes: a) a laser emitter for delivering an ultrashort pulse laser having a pulse width of not more than 1 ps onto a target which is a material for generating electrons at an intensity of not less than 1017 W/cm12-13-2012
20120312986CHARACTERIZATION OF NANOSCALE STRUCTURES USING AN ULTRAFAST ELECTRON MICROSCOPE - The present invention relates to methods and systems for 4D ultrafast electron microscopy (UEM)—in situ imaging with ultrafast time resolution in TEM. Single electron imaging is used as a component of the 4D UEM technique to provide high spatial and temporal resolution unavailable using conventional techniques. Other embodiments of the present invention relate to methods and systems for convergent beam UEM, focusing the electron beams onto the specimen to measure structural characteristics in three dimensions as a function of time. Additionally, embodiments provide not only 4D imaging of specimens, but characterization of electron energy, performing time resolved electron energy loss spectroscopy (EELS).12-13-2012
20090152462Gas field ionization ion source, scanning charged particle microscope, optical axis adjustment method and specimen observation method - It is an object of the present invention to improve the stability of a gas field ionization ion source.06-18-2009
20120187292Charged Particle Beam Apparatus and Film Thickness Measurement Method - A charged particle beam apparatus of the present invention comprises a transmission electron detector (07-26-2012
20120228493WATER EQUIVALENT DEPTH MEASUREMENT - A method for determining a water equivalent depth between an entrance point and a reference point is disclosed. The method may comprise sending to a charged particle beam detector placed at a reference point within or beyond a body a charged particle beam whose energy is modulated between a minimum and maximum energy value, acquiring the time dependent response of said charged particle beam detector, determining from said time dependent response a value of a statistical parameter, providing a calibration curve expressing a relationship between values of said statistical parameter and water equivalent depths, and extracting from this calibration curve the water equivalent depth corresponding to the value of the statistical parameter determined from the time dependent response of the charged particle beam detector placed at the reference point.09-13-2012
20120228494METHOD FOR INSPECTING EUV RETICLE AND APPARATUS THEREOF - A method of inspecting an EUV reticle is proposed, which uses an original design layout information to align the plurality of patterns on an image, which is got by scanning the surface of an EUV reticle, such that the defect can be identified and classified according to the aligned patterns. In the scanning process, a step of conditioning surface charge is followed by a step of inspecting surface of the EUV reticle wherein the step of conditioning surface can neutralize the surface charge and the step of inspecting can obtain an image of the EUV reticle. The method of inspecting an EUV reticle also tuning a retarding electrode to attract more secondary electrons such that the greylevels of different patterns may be shown and the defect can be identified and classified.09-13-2012
20110121177System and Method for Detecting at Least One Contamination Species in a Lithographic Apparatus - A system for detecting at least one contamination species in an interior space of a lithographic apparatus, including: at least one monitoring surface configured to be in contact with the interior space, a thermal controller configured to control the temperature of the monitoring surface to at least one detection temperature, and at least one detector configured to detect condensation of the at least one contamination species onto the monitoring surface.05-26-2011
20110121176SAMPLE INSPECTION METHODS, SYSTEMS AND COMPONENTS - The disclosure relates to sample inspection using an ion-beam microscope. In some embodiments, the disclosure involves the use of multiple detectors, each of which provides different information about a sample.05-26-2011
20080296496METHOD AND APPARATUS OF WAFER SURFACE POTENTIAL REGULATION - An electron beam apparatus and method are presented for regulating wafer surface potential during e-beam (scanning electron microscopy SEM) inspection and review. Regulating surface potential is often critical to detect voltage contrast (VC) defects of specific type, and sometimes, its also an important factor to achieve high quality SEM images.12-04-2008
20100327162IN-LINE ELECTRON BEAM TEST SYSTEM - A method and apparatus for testing a plurality of electronic devices formed on a large area substrate is described. In one embodiment, the apparatus performs a test on the substrate in one linear axis in at least one chamber that is slightly wider than a dimension of the substrate to be tested. Clean room space and process time is minimized due to the smaller dimensions and volume of the system.12-30-2010
20100327161METHOD FOR DISCRIMINATION OF BACKSCATTERED FROM INCOMING ELECTRONS IN IMAGING ELECTRON DETECTORS WITH A THIN ELECTRON-SENSITIVE LAYER - Methods are disclosed for operating a device having a high energy particle detector wherein the particles create first incoming traversal events, outgoing backscatter events, higher-order in and out events and incoming events caused by particles which backscatter out of the device, hit nearby mechanical structures and are scattered back into the device. Exemplary method steps include discriminating incoming traversal events from outgoing backscatter events, higher-order in and out events and incoming events by limiting dose rate to a level at ensures that separate events do not overlap and discriminating events from background and from other events based on total energy in each event; discriminating backscatter events from incoming traversal events based on electron path shape; or determining that a first event and a second event are coincident with each other and separating incoming form backscatter events based on electron path shape and energy level.12-30-2010
20100327160METHOD FOR EXAMINING A SAMPLE BY USING A CHARGED PARTICLE BEAM - A method for examining a sample with a scanning charged particle beam imaging apparatus. First, an image area and a scan area are specified on a surface of the sample. Herein, the image area is entirely overlapped within the scan area. Next, the scan area is scanned by using a charged particle beam along a direction neither parallel nor perpendicular to an orientation of the scan area. It is possible that only a portion of the scan area overlapped with the image area is exposed to the charged particle beam. It also is possible that both the shape and the size of the image area are essentially similar with that of the scan area, such that the size of the area projected by the charged particle beam is almost equal to the size of the image area.12-30-2010
20120261573ARRANGEMENT AND METHOD FOR THE CONTRAST IMPROVEMENT IN A CHARGED PARTICLE BEAM DEVICE FOR INSPECTING A SPECIMEN - A charged particle beam device for inspecting a specimen includes a charged particle beam source adapted to generate a primary charged particle beam; an objective lens device adapted to direct the primary charged particle beam onto the specimen; a retarding field device adapted to accelerate secondary charged particles starting from the specimen, a first detector device having a central opening, includes at least two azimuthal detector segments for detecting secondary particles, wherein the objective lens device is adapted such that particles with different starting angles from the specimen exhibit crossovers at substantially the same distance from the specimen between the objective lens and the detector device, and an aperture located between the objective lens and the crossovers, having an opening which is equal to or smaller than the central opening in the detector device.10-18-2012
20110036981CHARGED PARTICLE BEAM INSPECTION METHOD - An imaging method and apparatus for forming images of substantially the same area on a sample for defect inspection within the area are disclosed. The disclosed method includes line-scanning the charged particle beam over the area to form a plurality of n*Y scan lines by repeatedly forming a group of n scan lines for Y times. During the formation of each group of n scan lines, an optical beam is, from one line scan to another, selectively illuminated on the area prior to or simultaneously with scanning of the charged particle beam. In addition, during the formation of each group of n scan lines, a condition of illumination of the optical beam selectively changes from one line scan to another. The conditions at which individual n scan lines are formed are repeated for the formation of all Y groups.02-17-2011
20120298863Method for Detecting Information of an Electronic Potential on a Sample and Charged Particle Beam Apparatus - An object of the present invention is to provide a method and apparatus for measuring a potential on a surface of a sample using a charged particle beam while restraining a change in the potential on the sample induced by the charged particle beam application, or detecting a compensation value for a change in a condition for the apparatus caused by the sample being electrically charged. In order to achieve the above object, the present invention provides a method and apparatus for applying a voltage to a sample so that a charged particle beam does not reach the sample (hereinafter, this may be referred to as “mirror state”) in a state in which the charged particle beam is applied toward the sample, and detecting information relating to a potential on the sample using signals obtained by that voltage application.11-29-2012
20120298862CONTOUR-BASED DEFECT DETECTION USING AN INSPECTION APPARATUS - One embodiment relates to a method of inspecting a site location on a target substrate. Contours are obtained, the contours having been generated from a reference image using a design clip. A target image of the site location is acquired. The contours are aligned to the target image, and contrast values are computed for pixels on the contours. A threshold is applied to the contrast values to determine contour-based defect blobs. Another embodiment relates to a method of generating contours for use in inspecting a site location for defects. Other embodiments, aspects and features are also disclosed.11-29-2012
20120267527A METHOD OF DETECTING CONTAMINATION OF TITANIUM ALLOYS OF TWO-PHASE TYPE HAVING AN ALPHA AND A BETA PHASE - The invention relates to a method of examining a titanium alloy of two-phase type with an alpha phase and a beta phase. The method comprises the following steps: 10-25-2012
20120318976PATTERN MEASUREMENT APPARATUS AND PATTERN MEASUREMENT METHOD - A pattern measurement apparatus scans an observation region of a sample surface with an electron beam and detects secondary electrons emitted from the sample surface with the irradiation of the electron beam, by using a plurality of electron detectors arranged around the optical axis of the electron beam. Images are taken in two directions that are orthogonal to a pattern extending direction, and are opposite to each other across the optical axis. Then, profiles of a line orthogonal to each of edges are extracted from the images, and a subtraction between the line profiles is taken to obtain a subtractive profile. The position of an upper end of each edge is detected based on a descending portion of the subtractive profile, and the position of a lower end of the edge is detected based on a rising portion or a descending portion of one of the line profiles.12-20-2012
20120318977Scanning Electron Microscope Optical Condition Setting Method and Scanning Electron Microscope - It is an object of the present invention to provide an optical-condition setting method for a charged-particle beam device, and the charged-particle beam device which make it possible to set the following optical condition: Namely, an optical condition which allows the suppression of a lowering in the measurement and inspection accuracy caused by the influence of electrification, even if there exist a large number of measurement and inspection points.12-20-2012
20110226948Sample processing and observing method - There is provided a sample processing and observing method including irradiating a focused ion beam to a sample to form an observed surface, irradiating an electron beam to the observed surface to form an observed image, removing the surface opposite to the observed surface of the sample, forming a lamella including the observed surface and obtaining a transmission observed image for the lamella.09-22-2011
20110226947Composite charged particle beam apparatus and sample processing and observing method - There is provided a composite charged particle beam apparatus, in which a first rotation axis of a rotatable stage intersects a beam irradiation axis of a FIB column and a beam irradiation axis of an SEM so as to be substantially perpendicular thereto, respectively, at a sample observing position, the rotatable stage is provided with a supporting member which can be rotated with respect to the first rotation axis, and the supporting member is connected to a movement mechanism which can dispose the sample at the sample observing position.09-22-2011
20120273677IN-COLUMN DETECTOR FOR PARTICLE-OPTICAL COLUMN - The invention relates to an in-column back-scattered electron detector, the detector placed in a combined electrostatic/magnetic objective lens for a SEM. The detector is formed as a charged particle sensitive surface, preferably a scintillator disk that acts as one of the electrode faces forming the electrostatic focusing field. The photons generated in the scintillator are detected by a photon detector, such as a photo-diode or a multi-pixel photon detector. The objective lens may be equipped with another electron detector for detecting secondary electrons that are kept closer to the axis. A light guide may be used to offer electrical insulation between the photon detector and the scintillator.11-01-2012
20120080596Laser Atom Probe and Laser Atom Probe Analysis Methods - A laser atom probe system and a method for analysing a specimen by laser atom probe tomography are disclosed. The system includes a specimen holder whereon a specimen to be analyzed may be mounted, the specimen having a tip shape. The system further includes a detector, an electrode arranged between the specimen holder and the detector, and a voltage source configured to apply a voltage difference between the specimen tip and the electrode. The system also includes at least one laser system configured to direct a laser beam laterally at the specimen tip and a tip shape monitoring means configured to detect and monitor the tip shape, and/or a means for altering and/or controlling one or more laser parameters of said laser beam(s) so as to maintain, restore or control said specimen tip shape.04-05-2012
20110240854TRANSMISSION ELECTRON MICROSCOPE HAVING ELECTRON SPECTROMETER - In a spectral image formed by two orthogonal axes, one of which is an axis of the amount of energy loss and the other of which is an axis of positional information, by the use of an electron spectrometer and a transmission electron microscope, distortion in the spectral image of a sample to be analyzed is corrected with high efficiency and high accuracy by comparing electron beam positions calculated from a two-dimensional electron beam position image formed by the two orthogonal axes (the axis of the amount of energy loss and the axis of positional information) with reference electron beam positions, and calculating amounts of the distortion based on the differences of the electron beam positions. Method and apparatus are offered which correct distortion in a spectral image with high efficiency and high accuracy, the image being formed by the two orthogonal axes (the axis of the amount of energy loss and the axis of positional information).10-06-2011
20110248163IMAGING BASED ON COSMIC-RAY PRODUCED CHARGED PARTICLES - Techniques, apparatus and systems for obtaining tomographic images of a volume of interest by using charged particle tomography detection systems.10-13-2011
20130015352HIGH PERFORMANCE COMPUTING FOR THREE DIMENSIONAL PROTON COMPUTED TOMOGRAPHY (HPC-PCT) - A proton computed tomography (pCT) detector system, including two tracking detectors in sequence on a first side of an object to be imaged, two tracking detectors in sequence on an opposite side of the object to be imaged, a calorimeter, and a computer cluster, wherein the tracking detectors include plastic scintillation fibers. All fibers in the detector system are read out by Silicon Photomultipliers (SiPM). A method of imaging an object by emitting protons from a source through two tracking detectors, through and around the object, and through two opposite tracking detectors, detecting energy of the protons with a calorimeter, and imaging the object.01-17-2013
20120091339CHARGED-PARTICLE MICROSCOPE DEVICE, AND METHOD OF CONTROLLING CHARGED-PARTICLE BEAMS - A charged-particle microscope device and a method of controlling charged-particle beams are provided, which are capable of signal detection at the time when the charged state of an observation sample or a defect portion becomes optimum. Charge accumulation-waiting time T from an initial irradiation with an electron beam 04-19-2012
20120091338Environmental cell for a particle-optical apparatus - The invention relates to an environmental cell for use in e.g. an electron microscope. The environmental cell shows an aperture (04-19-2012
20120091337CHARGED PARTICLE BEAM DEVICES - In a charged particle beam device, such as an electron microscope, a beam generating apparatus generates a focussed charged particle beam e—that is incident on a specimen in a specimen chamber which holds the specimen in a gaseous environment. A pressure limiting aperture provides partial gaseous isolation of the specimen chamber from the beam generating means, and is located in a lens of the latter. The device includes a conduit, such as an intermediate chamber in the lens, through which, in use, gas is supplied to set up a flow of gas from the region of the lens towards the specimen, thereby to prevent material released from the specimen from impinging on the pressure limiting aperture, to prevent contamination of the latter. The device can be used in a method of scanning a specimen with a charged particle beam, for example in a method of electron microscopy.04-19-2012
20120091336SEM ACTUATED LEVITATION DEVICES - A microelectromechanical system (MEMS) device is configured to be actuated directly by an energy field through Coulombic interactions to have a translational motion. The MEMS device can be untethered, and actuated by irradiating an actuator with the energy field thereby building up electrical charges on the actuator. The MEMS device can thus be actuated with Coulomb forces from the built up electrical charges to suspend a movable portion over a rail. In one example, the energy field includes an electron beam from a scanning electron microscope (SEM).04-19-2012
20120326028CHARGED PARTICLE BEAM APPARATUS, AND SAMPLE PROCESSING AND OBSERVATION METHOD - An object of the present invention relates to realizing the processing of a sample by charged particle beams and the monitoring of the processed cross section with a high throughput.12-27-2012
20100032563Method of determining the cuticle scale height of fibers - Accurate and reproducible measurements of the cuticle scale height of naturally occurring proteinaceous fibers can be made by measuring the scale height of the fiber while it is vertically oriented beneath a scanning electron microscope.02-11-2010
20120138792OPTICAL PROBING IN ELECTRON MICROSCOPES - The present invention relates to an optical arrangement and in particular to an optical arrangement for use in electron microscopy applications. This is used for sample characterization with simultaneous measurement with the electron microscopy of the sample and measurements with an optical setup and/or using a manipulator for probing of a light source or a scanning probe device.06-07-2012
20130009057Electron Beam Irradiation Method and Scanning Electron Microscope - The present invention has for its object to provide a charged particle beam irradiation method and a charged particle beam apparatus which can suppress unevenness of electrification even when a plurality of different kinds of materials are contained in a pre-dosing area or degrees of density of patterns inside the pre-dosing area differs with positions.01-10-2013
20130009056Integrable magnetic field compensation for use in scanning and transmission electron microscopes - An arrangement and a method for imaging, examining and processing a sample using electrons. The arrangement comprises an electron microscope for providing electrons, a chamber with a sample holder on which a sample is positionable such that it can be imaged, examined and processed using the electrons. A system for magnetic field compensation in at least one spatial direction, including a compensation coil, wherein a wall of the chamber has an accommodation area, in sections thereof, for a portion of the compensation coil. Generally, only the chamber in which the sample is arranged is considered as a compensation volume. It suffice to reduce the compensation volume to the sensitive region of the electron microscope, since it is in the chamber, shortly following a final focusing and filtering, where the electron beam is most sensitive in terms of image quality when subjected to external electromagnetic interference.01-10-2013
20130015350Electron-Beam Image ReconstructionAANM Chen; DongxueAACI Palo AltoAAST CAAACO USAAGP Chen; Dongxue Palo Alto CA USAANM Hu; ChangqingAACI SunnyvaleAAST CAAACO USAAGP Hu; Changqing Sunnyvale CA USAANM Pang; LinyongAACI Los GatosAAST CAAACO USAAGP Pang; Linyong Los Gatos CA US - A technique for reconstructing an electron-beam (EB) image, which can be a scanning-electron-microscope (SEM) image or an EB-inspection image, is described. This reconstruction technique may involve an inverse electro-optical calculation that corrects for the influence of an electro-optical transfer function associated with an EB system on the EB image. In particular, in the inverse calculation a multi-valued representation of an initial EB image is at an image plane in the model of the electro-optical transfer function and a resulting EB image is at an object plane in the model of the electro-optical transfer function. Furthermore, the model of the electro-optical transfer function may have an analytical derivative and/or may be represented by a closed-form expression.01-17-2013
20130015351CLUSTERING OF MULTI-MODAL DATA - Information from multiple detectors acquiring different types of information is combined to determine one or more properties of a sample more efficiently than the properties could be determined using a single type of information from a single type of detector. In some embodiments, information is collected simultaneously from the different detectors which can greatly reduce data acquisition time. In some embodiments, information from different points on the sample are grouped based on information from one type of detector and information from the second type of detector related to these points is combined, for example, to create a single spectrum from a second detector of a region of common composition as determined by the first detector. In some embodiments, the data collection is adaptive, that is, the data is analyzed during collection to determine whether sufficient data has been collected to determine a desired property with the desired confidence.01-17-2013
20120241608INTERFACE, A METHOD FOR OBSERVING AN OBJECT WITHIN A NON-VACUUM ENVIRONMENT AND A SCANNING ELECTRON MICROSCOPE - An interface, a scanning electron microscope and a method for observing an object that is positioned in a non-vacuum environment. The method includes: passing at least one electron beam that is generated in a vacuum environment through at least one aperture out of an aperture array and through at least one ultra thin membrane that seals the at least one aperture; wherein the at least one electron beam is directed towards the object; wherein the at least one ultra thin membrane withstands a pressure difference between the vacuum environment and the non-vacuum environment; and detecting particles generated in response to an interaction between the at least one electron beam and the object.09-27-2012
20120241607MICROFLUIDIC BLOTLESS CRYO TEM DEVICE AND METHOD - A method and system is provided for automatically preparing transmission electron microscopy (TEM) samples for examination by depositing extremely small samples onto a grid without need for a blotting step. A sample liquid droplet is formed at the end of a capillary, wherein a portion of the liquid is transferred to the TEM sample grid by contact. The excess volume in the liquid droplet is then retracted by an adjacent capillary. After a predetermined time interval, the retraction capillary is moved toward the drop of the sample to remove the excess volume. As compared to a conventional machine, where the blotting procedure can deform the structure of the molecule of interest, the present invention utilizes a very low shear rate for removal of the excess sample fluid.09-27-2012
20100084553CHARGED PARTICLE DETECTION APPARATUS AND DETECTION METHOD - A detection apparatus for use in a charged particle beam device is provided. The detection apparatus includes a separation field generating portion adapted to generate a separation field separating positively and negatively charged secondary particles, at least one first detector for detecting positively charged particles, at least one second detector for detecting negatively charged particles, wherein the detection apparatus is adapted to simultaneously detect the positively charged secondary particles in the at least one first detector and the negatively charged secondary particles in the at least one second detector. Further, a method of simultaneously detecting negatively and positively charged particles is provided. The method includes providing a separation field, providing at least one first detector and at least one second detector, separating the negatively charged particles from the positively charged particles in the separation field, simultaneously detecting positively charged particles with the at least one first detector and negatively charged particles with the at least one second detector.04-08-2010
20080224037Charged Particle Beam Device - There is provided a charged particle beam device which can prevent a specimen from not being able to be observed due to entering of a part of a grid of a mesh in a field of view, each pixel of a scanning transmission electron microscope image is displayed on the basis of a gray value of a predetermined gradation scale. In the case where the number of pixels of a predetermined gray value is less than a predetermined percentage, it is decided that a mesh image is not included in the scanning transmission electron microscope image. In the case where the number of pixels of the predetermined gray value is not less than a predetermined percentage, it is judged that the mesh image is included in the scanning transmission electron microscope image. In the case where the mesh image is included in the scanning transmission electron microscope image, a magnification is increased, a specimen stage is moved, or beam deflection is performed, and when the mesh image is not anymore included in the scanning transmission electron microscope image, the predetermined gradation scale is converted to other gradation scale and a scanning transmission electron microscope image is obtained.09-18-2008
20080224036METHOD AND DEVICE TO QUANTIFY ACTIVE CARRIER PROFILES IN ULTRA-SHALLOW SEMICONDUCTOR STRUCTURES - A method and device for determining, in a non-destructive way, at least the active carrier profile from an unknown semiconductor substrate are disclosed. In one aspect, the method comprises generating 209-18-2008
20110260057CHARGED PARTICLE BEAM APPARATUS - According to a charged particle beam apparatus of this invention, an inspection position on a test sample (wafer coordinate system) is converted to a setting position of an inspection mechanism (stage coordinate system (polar coordinate system)), a rotating arm (10-27-2011
20110260054ATOM PROBE PULSE ENERGY - The present invention relates to atom probe pulse energy. One aspect of the invention is directed toward a method that includes establishing a data relationship between pulse energy and bias energy for a target evaporation rate. In selected embodiments, establishing a data relationship can include determining an equivalent pulse fraction for a selected pulse energy and bias energy combination based on a local change in bias energy compared to a local change in pulse energy associated with the selected pulse energy and bias energy combination. Another aspect of the invention is directed toward a method that includes determining an equivalent pulse fraction for a first bias energy and pulse energy combination and/or a second bias energy and pulse energy combination based on the difference between the first bias energy and the second bias energy compared to the difference between the first pulse energy and the second pulse energy.10-27-2011
20130175444ISOTOPE ION MICROSCOPE METHODS AND SYSTEMS - Ion microscope methods and systems are disclosed. In general, the systems and methods involve relatively light isotopes, minority isotopes or both. In some embodiments, an isotope of Neon is used.07-11-2013
20090039259SCANNING ELECTRON MICROSCOPE - To make it possible to observe the bottom of a contact hole and internal wires, in observation of the contact hole 02-12-2009
20130168549Method of Evacuating Sample Holder, Pumping System, and Electron Microscope - Method and system are offered which evacuate a sample holder such that a sample can be inserted into the electron optical column of a microscope while certainly preventing exposure to the atmosphere. The system has pumping control means for controlling a vacuum pumping sequence. The inside of a microscope goniometer is evacuated to a given low vacuum state while the pressure inside a hermetic sample chamber is kept constant by the pumping control means. Then, the partition valve of the sample chamber is opened by the pumping control means and the sample chamber is brought to the low vacuum state. Then, the goniometer and sample chamber are brought to a high vacuum state by the pumping control means. Then, the sample is brought into the front end of the goniometer, and the sample holder is inserted into the electron optical column.07-04-2013
20080217531INTEGRATED DEFLECTORS FOR BEAM ALIGNMENT AND BLANKING IN CHARGED PARTICLE COLUMNS - A charged particle beam column package includes an assembly (e.g., comprising a plurality of layers, which can have a component coupled to one of the layers), and at least one deflector between an extractor and aperture of the assembly. Further, at least one of the layers has interconnects thereon.09-11-2008
20130112871Inspection Method and Device - The high magnification, high resolution and real-time property of an SEM image are realized when the electrical characteristics of an inspection object are measured, without affecting the electrical characteristics of the inspection object. A high-quality, high-magnification first image including an image of a target position in the inspection object on a sample is acquired. Next, a low-quality, low-magnification second image including the image of the target position in the inspection object on the sample and probe images is acquired. Next, data on the first image is built into the second image to generate an image for coarse-access observation which is the same in magnification as the second image. The generation of the image for coarse-access observation is repeated until a probe comes close to the target position in the inspection object.05-09-2013
20130126729Scanning Transmission Electron Microscopy for Polymer Sequencing - A scanning transmission electron microscope includes an electron beam source to generate an electron beam. Beam optics are provided to converge the electron beam to a probe, such as a longitudinally stretched probe. A stage is provided to hold a specimen in the path of the electron beam. The specimen comprises one or more polymers to be sequenced. A beam scanner scans the electron beam across the specimen. A controller may define one or more scanning areas corresponding to the locations of the polymers, and control one or more of the beam scanner and stage to selectively scan the electron beam probe in the scanning areas. The controller may also tune the beam optics during imaging. One or more detectors are provided to detect electrons transmitted through the specimen to generate an image for each of the scanning areas. The controller may also analyze the one or more images to sequence the polymers.05-23-2013
20130140457DEFECT OBSERVATION METHOD AND DEFECT OBSERVATION DEVICE - A defect observation device supplied with a taught defect and an ideal output obtained by conducting image processing on the taught defect as its input and capable of conducting work of setting image processing parameters required to classify defect kinds easily and fast is provided.06-06-2013
20130140458Specimen Holder for Charged-Particle Beam Apparatus - The present invention realizes a specimen holder for a charged-particle beam apparatus capable for moving at least one specimen support, and for obtaining the image of the transmission electron microscopy, or the like of all specimens arranged in the specimen holder with high spatial resolution. The retainer plates are put on the specimen supports after the specimen supports are set on the specimen stages at the end portion of the specimen holder respectively. Thereafter, the specimen supports and the retainer plates are fixed to the specimen stages. The vibration damping mechanism is arranged on the end portion side of the specimen holder. The vibration of the specimen support can be prevented or restricted by the condition that the vibration damping mechanism contacts to the specimen support. Accordingly, the transmission electron microscopy image can be obtained with high spatial resolution power.06-06-2013
20080203297Specimen Inspection Equipment and How to Make the Electron Beam Absorbed Current Images - An object of the present invention is to obtain a clear absorbed current image without involving the difference in gain of amplifier between inputs, from absorbed currents detected by using a plurality of probes and to improve measurement efficiency.08-28-2008
20110210247VACUUMED DEVICE AND A SCANNING ELECTRON MICROSCOPE - A vacuumed device that includes: a sealed housing, an electron beam source, an electron optic component, a thin membrane, and a detector. The thin membrane seals an aperture of the sealed housing. The sealed housing defines a vacuumed space in which vacuum is maintained. The electron beam source is configured to generate an electron beam that propagates within the vacuumed space, interacts with the electron optic component and passes through the thin membrane. A first portion of the sealed housing is shaped to fit a space defined by non-vacuumed scanning electron microscope components that are maintained in a non-vacuum environment.09-01-2011
20080308727Sample Preparation for Micro-Analysis - System and method for preparing a sample for micro-analysis, comprising: (a) sample precursor holding unit, for supporting and holding a sample precursor; (b) transporting and positioning unit, for transporting and positioning the sample precursor holding unit; (c) optical imaging unit, for optically imaging, recognizing, and identifying, target features on the sample precursor, and for monitoring the sample preparation; (d) picking and placing unit, for picking and placing the sample precursor and system components from initial positions to other functionally dependent positions; (e) micro-groove generating unit, for generating at least one micro-groove in a surface of the sample precursor, wherein the micro-groove generating unit includes components for controlling formation of each micro-groove in the surface; and (f) cryogenic sectioning unit, for cryogenically sectioning the sample precursor to a pre-determined configuration and size, for forming the prepared sample. Optionally, includes a micro-mask adhering unit, and a macro-mask adhering method.12-18-2008
20080197281Electron Microscopic Method and Electron Microscope Using Same - There is provided an electron microscopic method capable of realizing a high resolution based on the principle of the phase retrieval method. An electron microscope (08-21-2008
20110220792PHOTON INDUCED NEAR FIELD ELECTRON MICROSCOPE AND BIOLOGICAL IMAGING SYSTEM - A method of obtaining PINEM images includes providing femtosecond optical pulse, generating electron pulses, and directing the electron pulses towards a sample. The method also includes overlapping the femtosecond optical pulses and the electron pulses spatially and temporally at the sample and transferring energy from the femtosecond optical pulses to the electron pulses. The method further includes detecting electron pulses having an energy greater than a zero loss value, providing imaging in space and time.09-15-2011
20110248164Combination Laser and Charged Particle Beam System - A combined laser and charged particle beam system. A pulsed laser enables milling of a sample at material removal rates several orders of magnitude larger than possible for a focused ion beam. In some embodiments, a scanning electron microscope enables high resolution imaging of the sample during laser processing. In some embodiments, a focused ion beam enables more precise milling of the sample. A method and structure for deactivating the imaging detectors during laser milling enables the removal of imaging artifacts arising from saturation of the detector due to a plasma plume generated by the laser beam. In some embodiments, two types of detectors are employed: type-1 detectors provide high gain imaging during scanning of the sample with an electron or ion beam, while type-2 detectors enable lower gain imaging and endpoint detection during laser milling.10-13-2011
20130146765Charged Particle Beam Device and Sample Observation Method - Provided is a charged particle beam device that outputs both an ion beam and an electron beam at a sample, has a common detector for both the ion beam and the electron beam in the charged particle beam device that processes and observes the sample, and is able to provide a detection unit to an appropriate position corresponding to the process details and observation technique of the sample. Provided are an electron beam optical column in which an electron beam for observing the observation surface of a sample is generated, an ion beam optical column in which an ion beam that processes the sample is generated, a detection device that detects a secondary signal generated from the sample or transmitted electrons, and a sample stage that is capable of mounting the detection device thereon; is rotatable in a horizontal plane that includes the optical axis of the electron beam and the optical axis of the ion beam about a cross point where both optical axes intersect; and is able to change the distance between the observation surface of the sample and the cross point.06-13-2013
20120273678METHOD FOR EXAMINING A SAMPLE BY USING A CHARGED PARTICLE BEAM - A method for examining a sample with a scanning charged particle beam imaging apparatus. First, an image area and a scan area are specified on a surface of the sample. Herein, the image area is entirely overlapped within the scan area. Next, the scan area is scanned by using a charged particle beam along a direction neither parallel nor perpendicular to an orientation of the scan area. It is possible that only a portion of the scan area overlapped with the image area is exposed to the charged particle beam. It also is possible that both the shape and the size of the image area are essentially similar with that of the scan area, such that the size of the area projected by the charged particle beam is almost equal to the size of the image area.11-01-2012
20120273676METHOD FOR DETERMINING A RECONSTRUCTED IMAGE USING A PARTICLE-OPTICAL APPARATUS - The invention relates to a method for determining a reconstructed image using a particle-optical apparatus. The particle-optical apparatus comprises a particle source for producing a beam of particles, an object plane on which an object to be imaged may be placed, a condenser system for illuminating the object plane with the beam of particles, a projection system for forming an image of the object plane by imaging particles transmitted through the object on an image plane, and a detector for detecting the image, the detector comprising a semiconductor sensor having an array of pixels for providing a plurality of pixel signals from respective pixels of the array in response to particles incident on the detector.11-01-2012
20110233400Pattern measurement apparatus and pattern measurement method - A pattern measurement apparatus includes a beam intensity distribution creation unit to scan a charged particle beam over a reference pattern having edge portions formed at a right angle to create a line profile of the reference pattern and thus create a reference-beam intensity distribution, an edge width detection unit to determine line profiles for pattern models including edges formed at various inclination angles by use of the reference-beam intensity distribution and calculate edge widths reflecting an influence of a width of a reference beam, and a correspondence table creation unit to calculate correction values for edge positions from the calculated edge widths and the pattern models and create a correspondence table in which the edge widths and the correction values are associated with one another.09-29-2011
20110233399CHARGED PARTICLE BEAM DEVICE - The present invention provides a charged particle beam device in which signal electrons (09-29-2011
20110233398METHOD FOR CHARACTERISATION OF DIELECTRIC LAYERS BY ULTRAVIOLENT PHOTO-EMISSION SPECTROSCOPY - The electron affinity of thick dielectrics, of thickness greater than 10 nanometres, is measured by applying a polarisation voltage varying between −4V and −40V, for example, and by taking several measuring points to determine a reference value of the photo-emission threshold (E09-29-2011
20100314540Electron microscope with an emitter operating in medium vacuum - An electron microscope is described. This electron microscope includes an electron emitter that has an evaporation or sublimation rate that is significantly less than that of tungsten at the reduced pressures around the electron emitter during operation of the electron microscope. As a consequence, the electron microscope may be able to operate at reduced pressures that are much larger than those in existing electron microscopes. For example, at least during the operation the reduced pressure in the electron microscope may be greater than or equal to a medium vacuum. This capability may allow the electron microscope to use a roughing pump to provide the reduced pressure, thereby reducing the cost and complexity of the electron microscope, and improving its reliability. In addition, the size of the electron microscope may be reduced, which may enable a hand-held or portable version of the electron microscope.12-16-2010
20100314539METHOD AND APPARATUS FOR IDENTIFYING PLUG-TO-PLUG SHORT FROM A CHARGED PARTICLE MICROSCOPIC IMAGE - A method of inspecting for plug-to-plug short (short circuit) defects on a sample is disclosed. A charged particle beam for imaging the sample is repeatedly line-scanned over the sample with a line-to-line advancement direction perpendicular to the line-scan direction. The method includes scanning the sample with a line-to-line advancement along a first and a second direction, to obtain a first and a second image of the sample, respectively. Then, the method includes identifying plug patterns, represented in the obtained images with abnormal grey levels, as abnormal plug patterns. Next, the method compares the locations of the abnormal plug patterns to determine the presence of plug-to-plug short defects on the sample.12-16-2010
20110253892ELECTRON-BEAM EXPOSURE APPARATUS AND METHOD OF MANUFACTURING DEVICE - An electron-beam exposure apparatus includes a first measurement device which irradiates a mark formed on a substrate with light to detect reflected light of the light, thereby measuring the position of the mark, a second measurement device which detects a secondary electron generated by the electron beam guided from an electron source onto the mark, thereby measuring the position of the mark, and a controller. The controller performs measurements for the mark using the first and second measurement devices without interposing drawing of a pattern on the substrate with the electron beam between the measurements, calculates a shift in irradiated point of the electron beam based on the difference between the measurement results obtained by the first and second measurement devices, and controls at least one of a stage and the electron optical system to correct the calculated shift.10-20-2011
20110272577ELECTRON BEAM DEVICE WITH DISPERSION COMPENSATION, AND METHOD OF OPERATING SAME - An electron beam device comprises: a beam emitter for emitting a primary electron beam; an objective electron lens for focusing the primary electron beam onto a specimen, the objective lens defining an optical axis; a beam separator having a first dispersion for separating a signal electron beam from the primary electron beam; and a dispersion compensation element. The dispersion compensation element has a second dispersion, the dispersion compensation element being adapted for adjusting the second dispersion independently of an inclination angle of the primary beam downstream of the dispersion compensation element, such that the second dispersion substantially compensates the first dispersion. The dispersion compensation element is arranged upstream, along the primary electron beam, of the beam separator.11-10-2011
20110297826CHARGED PARTICLE BEAM DEVICE AND METHOD FOR CORRECTING POSITION WITH RESPECT TO CHARGED PARTICLE BEAM - An object of the present invention is to eliminate a distortion in an image even if there is an angular difference between the deflection direction of the charged particle beam and the tilt axis of a specimen, and to accurately observe and process the specimen. When the deflection direction of the charged particle beam is not parallel to the tilt axis of the specimen, the deflection rotation angle to the observation direction of the charged particle beam is determined, and the deflection pattern is changed. Thereby the distortion in the image is corrected. The deflection pattern is changed to a parallelogram. A distortion-free image is obtained even if the specimen is tilted, and the specimen can be observed and processed with high accuracy. This allows automatically recognizing the position correction mark to perform observation and processing after correcting the positional relation.12-08-2011
20110303844ELECTRON MICROSCOPE, AND SPECIMEN HOLDING METHOD - It is an object of the present invention to provide an electron microscope for properly applying a retarding voltage to a sample which is brought into electrical conduction.12-15-2011
20130187045ELECTRON BEAM IRRADIATION METHOD AND SCANNING ELECTRONIC MICROSCOPE - Provided is an electron beam scanning method for forming an electric field for appropriately guiding electrons emitted from a pattern to the outside of the pattern, and also provided is a scanning electron microscope. When an electron beam for forming charge is irradiated to a sample, a first electron beam is irradiated to a first position (07-25-2013
20110309245SPECIMEN PREPARATION DEVICE, AND CONTROL METHOD IN SPECIMEN PREPARATION DEVICE - Separation and the like of an excised specimen from a specimen are automatically performed. Marks for improving image recognition accuracy are provided in a region that becomes an excised specimen in a specimen and a region other than said region, or in a transfer means for transferring the excised specimen and a specimen holder capable of holding the excised specimen, and the relative movement of the excised specimen and the specimen, and the like are recognized with high accuracy by image recognition. In the sampling of a minute specimen using a focused ion beam, the detection of an end point of processing for separation of the excised specimen from the specimen, and the like are automatically performed. Thus, for example, unmanned specimen excision becomes possible, and preparation of a lot of specimens becomes possible.12-22-2011
20120025076DETECTOR DEVICE - A detector device detects the penetration depth of a particle beam applied to a target volume. The detector device includes a first detection device and a second detection device. The second detection device is configured to detect photons that are formed in the target volume and is disposed behind the first detection device with respect to a direction of the particle beam.02-02-2012
20120025075METHOD AND APPARATUS FOR ACQUIRING SIMULTANEOUS AND OVERLAPPING OPTICAL AND CHARGED PARTICLE BEAM IMAGES - This disclosure relates to a method and apparatus for producing multiple pixel-by-pixel simultaneous and overlapping images of a sample in a microscope with multiple imaging beams. A scanning electron microscope, a focused ion-beam microscope, or a microscope having both beams, also has an optical microscope. A region of interest on a sample is scanned by both charged-particle and optical beams, either by moving the sample beneath the beams by use of a mechanical stage, or by synchronized scanning of the stationary sample by the imaging beams, or by independently scanning the sample with the imaging beams and recording imaging signals so as to form pixel-by-pixel simultaneous and overlapping images.02-02-2012
20120025074ELECTRON DETECTOR INCLUDING AN INTIMATELY-COUPLED SCINTILLATOR-PHOTOMULTIPLIER COMBINATION, AND ELECTRON MICROSCOPE AND X-RAY DETECTOR EMPLOYING SAME - A charged particle beam device includes an electron source structured to generate an electron beam, the electron source being coupled to an electron column that at least partially houses a system structured to direct the electron beam toward a specimen positioned in a sample chamber to which the electron column is coupled, and an electron detector. The electron detector includes one or more assemblies positioned within the electron column or the sample chamber, each of the assemblies including an SiPM and a scintillator directly connected face-to-face to an active light sensing surface of the SiPM without a light transporting device being positioned in between the scintillator and the SiPM.02-02-2012
20120025073ORIENTATION IMAGING USING WIDE ANGLE CONVERGENT BEAM DIFFRACTION IN TRANSMISSION ELECTRON MICROSCOPY - Methods of orientation imaging microscopy (OIM) techniques generally performed using transition electron microscopy (TEM) for nanomaterials using dynamical theory is presented. Methods disclosed may use a wide angle convergent beam electron diffraction for performing OIM by generating a diffraction pattern having at least three diffraction discs that may provide additional information that is not available otherwise.02-02-2012
20130200262INSPECTION APPARATUS AND REPLACEABLE DOOR FOR A VACUUM CHAMBER OF SUCH AN INSPECTION APPARATUS AND A METHOD FOR OPERATING AN INSPECTION APPARATUS - An inspection apparatus is provided comprising in combination at least an optical microscope (08-08-2013
20120068068CHARGED PARTICLE DETECTORS - Disclosed are devices, systems, and methods are disclosed that include: (a) a first material layer positioned on a first surface of a support structure and configured to generate secondary electrons in response to incident charged particles that strike the first layer, the first layer including an aperture configured to permit a portion of the incident charged particles to pass through the aperture; and (b) a second material layer positioned on a second surface of the support structure and separated from the first layer by a distance of 0.5 cm or more, the second layer being configured to generate secondary electrons in response to charged particles that pass through the aperture and strike the second layer, where the device is a charged particle detector.03-22-2012
20120080595NON-CONTACT DETERMINATION OF JOINT INTEGRITY BETWEEN A TSV DIE AND A PACKAGE SUBSTRATE - A non-contact voltage contrast (VC) method of determining TSV joint integrity after partial assembly. A TSV die is provided including TSVs that extend from a frontside of the TSV die to TSV tips on a bottomside of the TSV die. At least some TSVs (contacting TSVs) are attached to pads on a top surface of a multilayer (ML) package substrate. The ML package substrate is on a substrate carrier that blocks electrical access to the frontside of the TSV die. Two or more nets including groups of contacting TSVs are tied common within the ML substrate. A charged particle reference beam is directed to a selected TSV within a first net and a charged particle primary beam is then rastered across the TSVs in the first net. VC signals emitted are detected, and joint integrity for the contacting TSVs to pads of the ML package substrate is determined from the VC signals.04-05-2012
20120085906CROSS-SECTION SYSTEMS AND METHODS - A first instrument (04-12-2012
20130206983POSITIONING SYSTEM AND METHOD FOR PRECISE STAGE AND PATTERN USED THEREOF - A positioning system for precise stage is provided. It includes a designed pattern on a stage; an electron beam column generating a focused electron beam to scan the designed pattern and produce electron signal; an electron detection unit to detect the electronic signal; and a control unit converting the electron signal to a clock signal to determine the relative position of the electron beam column and the designed pattern, so as to adjust the displacement of the stage. A nanometer scale positioning method for a precise stage is provided, which can resolve the problem of mechanical drift of the stage when the stage is multi-axis positioning or rotating.08-15-2013
20130206984SPECIMEN HOLDER USED FOR MOUNTING SAMPLES IN ELECTRON MICROSCOPES - A novel specimen holder for specimen support devices for insertion in electron microscopes. The novel specimen holder of the invention provides mechanical support for specimen support devices and as well as electrical contacts to the specimens or specimen support devices.08-15-2013

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