Class / Patent application number | Description | Number of patent applications / Date published |
216088000 | Using film of etchant between a stationary surface and a moving surface (e.g., chemical lapping, etc.) | 18 |
20080223826 | Reagent Delivery using a Membrane-Mediated Process - Methods and apparatuses for using a semi-permeable membrane to deliver a reagent to a surface in a topographically selective manner are provided. The methods and apparatuses are particularly useful for removing sulfur-containing electrocatalysts from copper surfaces using a semi-permeable membrane to deliver an oxidizing agent to a catalyst-coated surface. | 09-18-2008 |
20080283502 | Compositions, methods and systems for polishing aluminum oxide and aluminum oxynitride substrates - A method and system is provided for improved polishing or planarizing of aluminum oxide and/or aluminum oxynitride substrates. Specifically, the composition comprises an abrasive, a liquid carrier, and a phosphorus-type mono-acid. Preferably, the phosphorus-type mono-acid is phosphoric acid, phosphonoacetic acid, phosphorous acid, methyl phosphonic acid, or mixtures thereof. The control of the pH of the composition further improves polishing rates. | 11-20-2008 |
20110062115 | COMPOSITION AND METHOD FOR POLISHING BULK SILICON - The invention provides a polishing composition comprising (a) silica, (b) one or more compounds that increase the removal rate of silicon, (c) one or more tetraalkylammonium salts, and (d) water, wherein the polishing composition has a pH of about 7 to about 11. The invention further provides a method of polishing a substrate with the polishing composition. | 03-17-2011 |
20160200006 | METHOD FOR PRODUCING CYLINDRICAL NANOIMPRINTING MOLD AND METHOD FOR PRODUCING NANOIMPRINTING REPRODUCTION MOLD | 07-14-2016 |
216089000 | Etchant contains solid particle (e.g., abrasive for polishing, etc.) | 14 |
20080197112 | CHEMICAL ASSISTED LAPPING AND POLISHING OF METALS - Compositions for lapping gears and methods for preparing the same are described. These compositions contain a salt of polyaspartic acid and may contain additional components that are useful for lapping gears. Also provided are processes for using the compositions described herein. | 08-21-2008 |
20080203059 | DILUTABLE CMP COMPOSITION CONTAINING A SURFACTANT - The inventive polishing composition comprises an abrasive, an aqueous medium, a surfactant in an amount above its critical micelle concentration, and a hydrophobic surface active compound. The invention also provides a method of using a polishing composition. | 08-28-2008 |
20080210665 | POLISHING COMPOSITION AND POLISHING METHOD - A polishing composition includes an abrasive, phosphoric acid, and an oxidizing agent and has a pH of 6 or less. The polishing composition has the capability for polishing an alloy containing nickel and iron with a high stock removal rate. Accordingly, the polishing composition is preferably used in an application for polishing an object including the alloy containing nickel and iron. | 09-04-2008 |
20090057271 | MANUFACTURING METHOD OF METAL INTERCONNECTION - A manufacturing method of a metal interconnection is provided. A dielectric layer having an opening therein is formed on a substrate and a barrier layer is then formed on the dielectric layer by performing an ALD process. An Al layer and an Al/Cu layer are formed on the substrate by performing a chemical vapor deposition process and a physical vapor deposition process sequentially, and the Al/Cu layer fills the opening through hot-reflow. A metal line and a plug are formed at the same time after patterning the metal layers and the barrier layer by photolithography and etching processes. Alternatively, the metal layers and the barrier layer outside the opening are removed by a chemical mechanical process, so as to form a plug. The manufacturing method simplifies the processes of forming the metal interconnection and is adapted to the metal interconnection having the opening at a relatively high aspect ratio. | 03-05-2009 |
20090090696 | SLURRIES FOR POLISHING OXIDE AND NITRIDE WITH HIGH REMOVAL RATES - The invention provides a chemical-mechanical polishing composition comprising (a) an abrasive selected from the group consisting of alumina, ceria, titania, and zirconia, (b) a cationic copolymer comprising (A) a cationic monomer comprising a quaternary amino group and (B) a nonionic monomer, and (c) water. The invention also provides a method of polishing a substrate using the aforementioned polishing composition. | 04-09-2009 |
20090134122 | Copper-passivating CMP compositions and methods - The present invention provides chemical-mechanical polishing (CMP) methods and compositions for polishing copper-containing substrates. The methods of the present invention entail abrading a surface of a copper-containing substrate with a CMP composition of the invention, preferably in the presence of an oxidizing agent (e.g., hydrogen peroxide). The CMP compositions of the invention comprise a particulate abrasive, a copper-complexing agent, a copper-passivating agent bearing an acidic OH group and an additional oxygen substituent in a 1,6 relationship to the acidic OH group, and an aqueous carrier. A preferred composition of the invention comprises about 0.01 to about 1 percent by weight of the particulate abrasive, about 0.1 to about 1 percent by weight of the copper-complexing agent, about 10 to about 1000 ppm of the copper-passivating agent. | 05-28-2009 |
20090173717 | COMPOSITION AND METHOD FOR POLISHING NICKEL-PHOSPHOROUS-COATED ALUMINUM HARD DISKS - The invention provides a chemical-mechanical polishing composition consisting essentially of flumed alumina, alpha alumina, silica, a nonionic surfactant, an additive compound selected from the group consisting of glycine, alanine, iminodiacetic acid, and maleic acid, hydrogen peroxide, and water. The invention further provides a method of chemically-mechanically polishing a substrate comprising contacting a substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate. | 07-09-2009 |
20090250433 | SLURRY COMPOSITION AND METHOD FOR CHEMICAL MECHANICAL POLISHING OF COPPER INTEGRATED WITH TUNGSTEN BASED BARRIER METALS - The present invention is related to a slurry composition for polishing copper integrated with tungsten containing barrier layers and its use in a CMP method. The present invention is also related to a method for polishing copper integrated with tungsten containing barrier layers by means of an aqueous solution containing abrasive particles, an inorganic acid such as HNO | 10-08-2009 |
20100270265 | METHOD FOR ADSORPTION OF NANO-STRUCTURE AND ADSORPTION MATTER USING SOLID THIN FILM MASK - A method of adsorbing a nano-structure and an adsorption material using a solid thin film mask, including; depositing the mask over the entire surface of a tip of a probe microscope, grinding the end of the tip having the mask against a solid, thus removing the mask from the end of the tip, depositing a linker molecule layer over the entire surface of the tip the end of which has no mask, immersing the tip having the deposited linker molecule layer in a nano-structure solution, thus adsorbing the nano-structure on the linker molecule, and removing the mask from the tip. The mask is used to prevent deformation of the tip, and the nano-structure and the adsorption material can be deposited only on the end of the tip, regardless of the properties of the nano-structure and the adsorption material and regardless of the surface material of the tip and the properties thereof. | 10-28-2010 |
20100308016 | Polishing composition for nickel-phosphorous memory disks - The invention provides a chemical-mechanical polishing composition comprising alpha alumina, fumed alumina, silica, an oxidizing agent that oxidizes nickel-phosphorous, a complexing agent, and water. The invention also provides a method of chemically-mechanically polishing a substrate comprising contacting a substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate. | 12-09-2010 |
20140001155 | MANUFACTURING METHOD OF MAGNETIC DISK SUBSTRATE | 01-02-2014 |
20140263184 | CMP COMPOSITIONS WITH LOW SOLIDS CONTENT AND METHODS RELATED THERETO - Disclosed are a polishing composition and method of polishing a substrate. The composition has low-load (e.g., up to about 0.1 wt. %) of abrasive particles. The polishing composition also contains water and at least one anionic surfactant. In some embodiments, the abrasive particles are alpha alumina particles (e.g., coated with organic polymer). The polishing composition can be used, e.g., to polish a substrate of weak strength such as an organic polymer. An agent for oxidizing at least one of silicon and organic polymer is included in the composition in some embodiments. | 09-18-2014 |
20150102012 | MIXED ABRASIVE POLISHING COMPOSITIONS - The invention provides chemical-mechanical polishing compositions and methods of chemically-mechanically polishing a substrate with the chemical-mechanical polishing compositions. The polishing compositions comprise first abrasive particles, wherein the first abrasive particles are ceria particles, second abrasive particles, wherein the second abrasive particles are ceria particles, surface-modified silica particles, or organic particles, a pH-adjusting agent, and an aqueous carrier. The polishing compositions also exhibit multimodal particle size distributions. | 04-16-2015 |
20180025899 | BACK-SIDE FRICTION REDUCTION OF A SUBSTRATE | 01-25-2018 |