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NONGASEOUS PHASE ETCHING OF SUBSTRATE

Subclass of:

216 - Etching a substrate: processes

Patent class list (only not empty are listed)

Deeper subclasses:

Class / Patent application numberDescriptionNumber of patent applications / Date published
216096000 Etching inorganic substrate 44
216084000 With measuring, testing, or inspecting 22
216094000 Etching using radiation (e.g., laser, electron-beam, ion-beam, etc.) 17
216088000 Using film of etchant between a stationary surface and a moving surface (e.g., chemical lapping, etc.) 13
216092000 Projecting etchant against a moving substrate or controlling the angle or pattern projection of the etchant or controlling the angle or pattern of movement of the substrate 10
216093000 Recycling, regenerating, or rejunevating etchant 8
216095000 Substrate is multilayered 8
216087000 Irradiating, ion implanting, alloying, diffusing, or chemically reacting the substrate prior to ethching to change properties of substrate toward the etchant 6
216090000 Relative movement between the substrate and a confined pool of etchant 5
20080296262Process and Device for Cleaning and Etching a Substrate Wi - A simple process is disclosed for treating substrates having pre-structured zinc oxide layers on rigid or flexible supports. The ZnO is treated with an etching medium then with a cleaning liquid. The treatment with the etching and cleaning liquids is carried out while the substrate is conveyed through a device. The process is technically simple to implement and makes it possible to regularly and homogeneously roughen and texturise ZnO layers of up to 1 m12-04-2008
20120067848APPARATUS AND METHOD FOR WET PROCESSING SUBSTRATE - An exemplary wet processing apparatus includes a tank, a conveyor configured for conveying a substrate, and a spraying system. The tank receives a wet processing liquid. The conveyor includes a first conveying portion, a second conveying portion, and a third conveying portion. The first conveying portion is in the tank and conveys the substrate in the wet processing liquid. The second conveying portion is obliquely interconnected between the first and third conveying portions. The third conveying portion conveys the substrate above the wet processing liquid in the tank. The spraying system is above the third conveying portion, sprays the wet processing liquid onto the substrate on the third conveying portion.03-22-2012
20090302003Aqueous Solution for Chemical Polishing and Deburring and Process for Polishing and Deburring A Part made of Pure Nickel or Nickel-200 Therein - An aqueous solution for polishing and deburring includes pure water; carboxylic acid of 200 gram per liter to 300 gram per liter; sulfuric acid ions of 200 gram per liter to 500 gram per liter; phosphoric acid ions of 100 gram per liter to 300 gram per liter; and nitric acid ions of 50 gram per liter to 200 gram per liter. Also, a process for polishing and deburring a part made of pure nickel or nickel-200 in the solution includes removing oily substance from the part; washing the part by water; pouring the solution into a bath and submerging the part in the solution so that the part is brought into contact with the solution; neutralizing the solution remained on the surface of the part to prevent the part from oxidizing; and drying the part to obtain a finished part.12-10-2009
20090283499Fabrication of semiconductor interconnect structure - An etching process for selectively etching exposed metal surfaces of a substrate and forming a conductive capping layer over the metal surfaces is described. In some embodiments, the etching process involves oxidation of the exposed metal to form a metal oxide that is subsequently removed from the surface of the substrate. The exposed metal may be oxidized by using solutions containing oxidizing agents such as peroxides or by using oxidizing gases such as those containing oxygen or ozone. The metal oxide produced is then removed using suitable metal oxide etching agents such as glycine. The oxidation and etching may occur in the same solution. In other embodiments, the exposed metal is directly etched without forming a metal oxide. Suitable direct metal etching agents include any number of acidic solutions. The process allows for controlled oxidation and/or etching with reduced pitting. After the metal regions are etched and recessed in the substrate surface, a conductive capping layer is formed using electroless deposition over the recessed exposed metal regions.11-19-2009
20100176089CONFINEMENT OF FLUIDS ON SURFACES - The invention is directed to a device for applying a fluid to a surface, the device comprising a first conduit for directing a flow of a first fluid towards the surface and a second conduit for directing a flow of a second fluid away from the surface, the first conduit being arranged relative to the second conduit such that in operation of the device the second fluid comprises substantially the first fluid, and wherein said first conduit comprises a first aperture and the second conduit comprises a second aperture, the first aperture arranged at a distance from the second aperture.07-15-2010
Entries
DocumentTitleDate
20100089872ETCHING LIQUID FOR CONDUCTIVE POLYMER, AND METHOD FOR PATTERNING CONDUCTIVE POLYMER - The object is to provide an etching liquid for a conductive polymer having excellent etching capability toward a conductive polymer, and a method for patterning a conductive polymer employing the etching liquid for a conductive polymer. The conductive etching liquid of the present invention is selected from the group consisting of (1) an etching liquid comprising greater than 0.5 wt % but no greater than 70 wt % of (NH04-15-2010
20090194509SUBSTRATE TREATMENT APPARATUS, AND SUBSTRATE TREATMENT METHOD - The substrate treatment apparatus according to the present invention includes a substrate holding mechanism which holds a substrate, a nozzle body having a spout which spouts an etching liquid toward a major surface of the substrate held by the substrate holding mechanism, a nozzle body movement mechanism which moves the nozzle body in a predetermined movement direction so as to move an etching liquid application position at which the etching liquid is applied on the major surface, a first flexible sheet attached to the nozzle body to be brought into contact with a portion of the major surface located on one of opposite sides of the etching liquid application position with respect to the movement direction, and a second flexible sheet attached to the nozzle body to be brought into contact with a portion of the major surface located on the other side of the etching liquid application position with respect to the movement direction.08-06-2009
20100044343SUBSTRATE TREATMENT APPARATUS AND SUBSTRATE TREATMENT METHOD - A substrate treatment apparatus for treating a substrate on which a plurality of patterns are formed adjacently, has a first chamber which has resistance to a chemical and cleans the substrate with the chemical; a second chamber which is disposed above or below the first chamber, has higher pressure resistance than the first chamber, and supercritically dries the substrate; and a gate unit which is provided between the first and second chambers and can be opened/closed.02-25-2010
20090159567POLYMER SOLUTION FOR NANOIMPRINT LITHOGRAPHY TO REDUCE IMPRINT TEMPERATURE AND PRESSURE - An improved method of forming features on substrates by imprinting is provided. In the method, a polymer solution that contains at least one polymer dissolved in at least one polymerizable monomer and the polymer solution is deposited on the substrate to form a liquid film thereon. Further, the liquid film is cured by causing the at least one monomer to polymerize and optionally cross-linking the at least one polymer to thereby form a polymer film, the polymer film having a glass transition temperature of less than 100° C., and the polymer film is imprinted with a mold having a desired pattern to form a corresponding negative pattern in the polymer film. Alternatively, the liquid film is imprinted with the mold and the liquid film is cured in the presence of the mold to form the polymer film with the negative pattern.06-25-2009
20130048607METHOD AND DEVICE FOR WET TREATMENT OF PLATE-LIKE ARTICLES - A method and device for wet treatment of a plate-like article comprises a spin chuck for holding and rotating the plate-like article. Gas supply nozzles open on a surface of the spin chuck facing a first side of the plate-like article. The spin chuck is configured to direct gas discharged from the gas supply nozzles radially outwardly through a gap defined between an upper surface of the spin chuck and a downwardly facing surface of a plate-like article positioned on the spin chuck. Liquid supply nozzles open on the surface of the spin chuck facing a first side of the plate-like article and positioned radially outwardly of the gas supply nozzles. The liquid supply nozzles are positioned beneath a peripheral region of a plate-like article positioned on the spin chuck.02-28-2013
20130048608SUPPORT AND TRANSPORT UNIT FOR A PRINT SUBSTRATE FOR A PLANT FOR DEPOSITING PRINT TRACKS, AND RELATIVE DEPOSITION METHOD - A unit to support and transport a print substrate (02-28-2013
20130048609LIQUID PROCESSING APPARATUS, LIQUID PROCESSING METHOD AND STORAGE MEDIUM - Disclosed are a liquid processing apparatus and a liquid processing method. The liquid processing apparatus includes an ejection port ejecting a first liquid to a wafer, a first liquid supply mechanism supplying sulphuric acid to the ejection port, and a second liquid supply mechanism supplying hydrogen peroxide solution to the ejection port. The first liquid supply mechanism includes a first temperature adjustment mechanism maintaining the first liquid heated to a first temperature, a second temperature adjustment mechanism connected to the first temperature adjustment mechanism, and an ejection line connecting the second temperature adjustment mechanism with the ejection port. The second temperature adjustment mechanism includes a second circulation line and a second heater. The ejection line connects the second circulation line through a switching valve at a location further downstream than the second heater.02-28-2013
20130048610EDGE BEVEL REMOVAL APPARATUS AND METHOD - A substrate edge bevel etch module for etching a material from a peripheral edge of a substrate with an etchant is described. The substrate edge bevel etch module includes a rotatable substrate holder having a support for a substrate, and a surface tension etch applicator comprising a wetted etching surface opposing a substrate surface proximate an edge of the substrate when the surface tension etch applicator is located proximate to the edge of the substrate. The surface tension etch applicator further includes an etchant dispensing portion, proximate the wetted etching surface, which dispenses an etchant in a region between the wetted etching surface and the substrate surface and wet at least a portion of the wetted etching surface and the substrate surface. A spacing between the wetted etching surface and the substrate surface is selected to retain the etchant using surface tension forces and form a meniscus there between.02-28-2013
20090057270ETCHING PROCESSING METHOD - The etching processing method is characterized in that, when performing an etching processing on a resin member by using a desmear liquid containing an alkaline permanganate etching liquid, the etching processing is performed by dipping the resin member into the desmear liquid of which an etching rate for a resin forming the resin member is adjusted by using at least one of an accelerator for accelerating the etching rate of the desmear liquid and a suppressor for suppressing the etching rate.03-05-2009
20120223054SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - A substrate processing apparatus includes a first processing chamber and a second processing chamber, a first substrate holding unit that holds a substrate in the first processing chamber, a chemical solution supply unit that supplies a chemical solution containing an etching component and a thickening agent to the substrate held by the first substrate holding unit, a substrate transfer unit that transfers the substrate from the first processing chamber to the second processing chamber in a state in which the chemical solution is held on the substrate, and a second substrate holding unit that holds a plurality of substrates on each of which the chemical solution is held in the second processing chamber.09-06-2012
20090008364Method and Device for Etching Substrates Contained in an Etching Solution - The invention relates to a method for etching substrates (01-08-2009
20090261067METHODS AND APPARATUS FOR PROTOTYPING THREE DIMENSIONAL OBJECTS FROM A PLURALITY OF LAYERS - The present invention is directed to methods and apparatus for prototyping three dimensional objects from a plurality of sequential layers that satisfies the need for an inexpensive method for producing both appearance models and functional parts. The method of the present invention includes building cross sectional portions of a three dimensional article, and assembling the individual cross sectional areas in a layer wise fashion to form a final article. The individual cross sectional areas are built by using an ink jet print head to deliver an aqueous solvent to cut the construction material to be adhered to previous cross sectional areas10-22-2009
20090095715METHODS OF POLYMERIC STENT SURFACE SMOOTHING AND RESURFACING TO REDUCE BIOLOGICALLY ACTIVE SITES - The present invention provides methods for fabricating a stent using a chemical treatment to smooth, polish or strengthen the stent. One such treatment involves exposing the stent to acetone or a similar solvent. In certain embodiments, the additional step comprises placing the stent in a bath containing acetone, or a similar solvent, where the bath also contains the polymer the stent is composed of. The acetone bath step may be conducted at a temperature that is below the glass transition temperature. The present invention also provides for methods of fabricating a stent using an acetone bath that comprises poly (lactic) acid. Other embodiments provide for methods of fabricating a stent using an acetone bath that comprises poly (lactic) acid and polyethylene glycol.04-16-2009
20100126965MOLDED BODY, METHOD FOR PRODUCING THE BODY AND USE THEREOF - A method for producing a molded body, said method comprising: providing a film comprising a thermoplastic plastic and having a film thickness D ranging from 1 μm to 1000 μm; irradiating the film with ionizing radiation, to produce irradiated regions in the film; thermally reshaping the film into a molded body and generating at least one hollow structure, wherein a temperature of the thermal reshaping remains below the melting temperature for the thermoplastic plastic; removing the irradiated regions, to create pores having a diameter δ from about 10 nm to about 10 μm in the molded body; and removing the molded body from a mold.05-27-2010
20090266792FABRICATION METHODS FOR PATTERNED STRUCTURES - Fabrication methods for patterned structures are presented. A layer of material is provided and a patterned region and a non-patterned region are formed using a multiple thermal writing head, wherein the patterned region and the non-patterned region have different physical properties. Alternatively, the layer of material is formed on a substrate. After the layer of material is transferred into the patterned and non-patterned regions, the non-patterned region is removed.10-29-2009
20090179007LIQUID TREATMENT METHOD AND STORAGE SYSTEM - A plurality of process liquid supply nozzles 07-16-2009
20090179006Method and Device for a Forced Wet-Chemical Treatment of Surfaces - In a method for wet-chemical treatment of surfaces of a material. a pulse-like spray jet of treatment fluid is directed against the surface of the material. This causes a pronounced impact action against the base of a structure to be processed so that the amount of treatment time which is necessary is substantially reduced. The pressure-free and accelerated outflow of the treatment fluid from the structure channels in the pauses between pulses results in the flanks of the structures or circuit-board conductors being subjected to less wet-chemical processing than in the prior art. In case of chemical etching the result is a smaller undercutting.07-16-2009
20120067846Liquid Processing Method, Recording Medium Having Recorded Program for Executing Liquid Processing Method Therein and Liquid Processing Apparatus - Disclosed is a method for processing a substrate including a first process and a second process. The first process comprises supporting the substrate formed with a titanium-containing film on its front surface and rear surface by a support unit which is rotatably installed; rotating the substrate along with the support unit; and supplying a first processing liquid containing hydrofluoric acid to the rear surface of the substrate thereby processing the rear surface of the substrate with the first processing liquid. The second process comprises supplying a second processing liquid containing ammonia hydrogen peroxide mixture to the rear surface of the substrate after the first process is completed, thereby processing the rear surface of the substrate with the second processing liquid.03-22-2012
20100176088APPARATUS AND METHOD FOR THE WET CHEMICAL TREATMENT OF A PRODUCT AND METHOD FOR INSTALLING A FLOW MEMBER INTO THE APPARATUS - To ensure a uniform flow over the surface of a product W, an apparatus is provided for the wet chemical treatment of the product W that is disposed in the apparatus 07-15-2010
20090071940MULTI-SPEED SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - After a development liquid on a substrate is washed away with a rinse liquid, the rotational speed of the substrate is reduced, so that a liquid layer of the rinse liquid is formed over a top surface of the substrate. Thereafter, the rotational speed of the substrate is increased. The increase in the rotational speed of the substrate causes a centrifugal force to be slightly greater than tension, thereby causing the liquid layer to be held on the substrate with the thickness thereof in its peripheral portion increased and the thickness thereof at the center thereof decreased. Then, gas is discharged toward the center of the liquid layer from a gas supply nozzle, so that a hole is formed at the center of the liquid layer. This causes tension that is balanced with a centrifugal force exerted on the peripheral portion of the liquid layer to disappear. Furthermore, the rotational speed of the substrate is further increased while the gas is discharged. Thus, the liquid layer moves outward from the substrate.03-19-2009
20100301014Polishing Composition and Polishing Method Using the Same - A polishing composition contains a nitrogen-containing compound and abrasive grains, and the pH of the composition is in the range of 1 to 7. The nitrogen-containing compound in the polishing composition preferably has a structure expressed by a formula: R12-02-2010
20100301013METHOD FOR LASER ABLATION - The present invention relates to a method for laser ablation. The method comprises providing a substrate from which material is to be ablated and providing an ambient environment for the laser ablation process, comprising supplying a prescribed assist gas in a prescribed delivery configuration. The method further comprises focusing a laser beam onto the substrate to be ablated at a power density above an ablation threshold of the material to remove material from the substrate in a laser material interaction zone at or adjacent to the focal point of the laser; and controlling the supply of the assist gas and the laser power to generate a liquid phase in the laser material interaction zone in which the ablated matter is suspended.12-02-2010
20110127236DEVELOPING DEVICE AND DEVELOPING METHOD - The temperature of a developing solution is varied depending on the type of resist or the resist pattern. The developing solution is applied while scanning a developer nozzle having a slit-shaped ejection port that has a length matching the width of the effective area of the substrate. After leaving the substrate with the developing solution being coated thereon for a predetermined period of time, a diluent is supplied while scanning a diluent nozzle, thereby substantially stopping the development reaction and causing the dissolved resist components to diffuse. A desired amount of resist can be quickly dissolved through the control of the developing solution temperature, while the development can be stopped before the dissolved resist components exhibit adverse effect through the supply of the diluent a predetermined timing, whereby achieving a pattern having a uniform line width and improved throughput.06-02-2011
20110017707METHOD AND DEVICE FOR SELECTIVE ETCHING - Method and device for selectively etching a first material (01-27-2011
20110240601SUBSTRATE TREATMENT APPARATUS AND SUBSTRATE TREATMENT METHOD - A substrate treatment apparatus is provided, which includes: a seal chamber including a chamber body having an opening, a lid member provided rotatably with respect to the chamber body and configured to close the opening, and a first liquid seal structure which liquid-seals between the lid member and the chamber body, the seal chamber having an internal space sealed from outside; a lid member rotating unit which rotates the lid member; a substrate holding/rotating unit which holds and rotates a substrate in the internal space of the seal chamber; and a treatment liquid supplying unit which supplies a treatment liquid to the substrate rotated by the substrate holding/rotating unit.10-06-2011
20110073565SPIN PROCESSING APPARATUS AND SPIN PROCESSING METHOD - A cup member, a rotary table which is provided in the cup member and is driven to rotate, holding the substrate, a treatment liquid receiver which has a ring shape open upward and is provided to be movable in vertical directions, between inner circumference of the cup member and outer circumference of the rotary table, to receive the plurality of kinds of treatment liquids scattering from the substrate rotating, a linear motor which sets the treatment liquid receiver to height levels by driving the treatment liquid receiver in the vertical directions, respectively corresponding to the plurality of types of treatment liquids supplied for the substrate, and first to third separate flow channels which are provided on the cup member and separately collect the treatment liquids received by the treatment liquid receiver, respectively corresponding to the height levels set by the linear motor.03-31-2011
20110062114SUBSTRATE LIQUID-PROCESSING METHOD, SUBSTRATE LIQUID-PROCESSING APPARATUS, AND STORAGE MEDIUM - First, hydrofluoric acid is supplied to the circumferential edge of a substrate W while the substrate W provided with a polysilicon film is rotated, to remove a natural oxide film provided along the circumferential edge of the substrate W by etching so as to expose the polysilicon film. Next, hydrofluoric-nitric acid is supplied to the circumferential edge of the substrate W while the substrate W from which the polysilicon film is exposed is rotated, to remove the polysilicon film by etching. Such operation is performed by controlling a rotational driving unit 03-17-2011
20110247996DILUTABLE CMP COMPOSITION CONTAINING A SURFACTANT - The inventive polishing composition comprises an abrasive, an aqueous medium, a surfactant in an amount above its critical micelle concentration, and a hydrophobic surface active compound. The invention also provides a method of using a polishing composition.10-13-2011
20120067847APPARATUS AND METHOD OF PROCESSING SUBSTRATE - According to one embodiment, an apparatus of processing a substrate includes a treatment chamber, a holder, a feed device, and a temperature control device. The holder is provided in the treatment chamber and is configured to rotatably hold the substrate. The feed device includes a nozzle configured to eject an etching solution to a surface of the substrate held by the holder. The temperature control device includes first and second devices, and a controller. The first device is configured to heat and/or cool an atmosphere inside the treatment chamber. The second device is configured to heat and/or cool the etching solution. The controller is configured to control operation of the first and second devices such that a temperature of the atmosphere is higher than that of the etching solution in the nozzle and that difference between the temperature of the atmosphere and that of the etching solution is maintained constant.03-22-2012
20120199554DECORATIVE SURFACE FINISH AND METHOD OF FORMING SAME - A decorative metal finish for a part with a non-conductive surface where the non-conductive surface is lightly roughened to improve its adherence capabilities. A thin metal layer is electrolessly deposited on the lightly roughened surface to provide a bright durable metal finish on the non-conductive surface. An organic coating layer is deposited over the thin metal layer to provide protection for the metal finish.08-09-2012
20080203058SUBSTRATE DEVELOPING METHOD AND DEVELOPING APPARATUS - A method for developing a substrate includes a developing step for supplying a developer to the substrate, and a neutralizing and removing step for supplying a treating solution containing a neutralizing material to the substrate to neutralize the developer, and neutralizing the developer and removing the developer from the substrate. In the neutralizing and removing step, the developer is neutralized by the treating solution. This neutralization reaction forms a product (salt) which easily melts into the treating solution and does not precipitate. Thus, the product is removable from the substrate along with the treating solution. Therefore, the developer is inhibited from remaining on the substrate. As a result, it is possible to prevent post-develop defects due to “residues of the developer” or the developer remaining on the substrate.08-28-2008
20120145672PROCESS FOR SELECTIVELY REMOVING NITRIDE FROM SUBSTRATES - A method of selectively removing silicon nitride from a substrate comprises providing a substrate having silicon nitride on a surface thereof; and dispensing phosphoric acid and sulfuric acid onto the surface of the substrate as a mixed acid liquid stream at a temperature greater than about 150° C. In this method, water is added to a liquid solution of the mixed acid liquid stream as or after the liquid solution of the mixed acid liquid stream passes through a nozzle.06-14-2012
20080203057WET CLEANING PROCESS AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING THE SAME - A wet cleaning process is provided. The wet cleaning process includes at least one first rinse process and a second rinse step. The first rinse step includes rinsing a substrate using deionized water containing CO08-28-2008
20110303644Methods for Plating Plastic Articles - An improved method for plating and metallizing plastic articles is disclosed. A polymer is selected to mold a three-dimensional plastic article for use with miniaturized electronic devices. Patterns are structured onto the surface of the plastic article by means of laser direct structuring or by multi-shot injection molding. The patterns on the plastic article are activated with a colloidal palladium solution. The activated patterns are then plated with copper and nickel using electroless baths. Optionally, the patterns are flash gold plated to improve bonding, solderability and contact resistance.12-15-2011
20120305528REMOVABLE COATING AND RESIN SYSTEM AND METHOD OF USING THE SAME - The illustrated embodiments include a selectively removable marking product composed of an aqueous solution of at least one resin complex of polyethyleneimine (PEI) characterized by a total amine number-to-carboxylic acid number ratio in the range of 1/3 to 1 inclusive, an alkaline additive and at least one paint additive. The illustrated embodiments also include a system for semipermanently applying a marking product to the surface of an article to decorate, illustrate or color the article and then selectively removing the marking product therefrom which includes the steps of coating the surface of the article with the marking product having the composition disclosed above, air drying the marking product on the surface to provide a semipermanent coating, and at a later time selectively removing the semipermanent coating by application thereto of an alkaline solution.12-06-2012
20120043300NanoNeedles Pulling System - The present invention provides a description for an instrument for creating arrays of metal nanostructures allows on various substrates at the wafer scale. Embodiment methods permit for the formation of individual and arrays of metal alloys of nanostructures by bringing an array of liquid metal droplets droplet in contact with an array of metal patterns by using high precision manipulation mechanism. Top view and side view optical lenses are used to observe the manipulation process and also allow for aligning the metal droplets with film of solid metal patterns. As one example, this instrument is capable of pattering high aspect ratio nanostructures such as silver-gallium (Ag02-23-2012
20120018403ROLLER GROUP FOR TRANSPORTING THIN SUBSTRATE AND METHOD FOR PERFORMING CHEMICAL TREATMENT BY USING THE SAME - A roller group for transporting a thin substrate (01-26-2012
20120111835WET ETCHING APPARATUS AND METHOD - A wet etching apparatus includes: an etching vessel applying etchant to a substrate to etch the substrate; and a water cleaning vessel and a drying vessel connected to the etching vessel, successively processing the substrate, and provided with an air knife removing droplets on the substrate. The wet etching apparatus further includes: a duct connected at least to the etching vessel and having an interior maintained at a negative pressure; and an exhaust pipe connecting the water cleaning vessel and the drying vessel to the duct. The exhaust pipe is provided with an auto damper opening/closing the exhaust pipe and an inlet introducing external air. This allows the air knife to operate while allowing the wet etching apparatus to hold internal pressure lower than external pressure.05-10-2012
20110180511Polishing Composition and Polishing Method Using the Same - A polishing composition of the present invention contains an oxidant, an anticorrosive, and a surfactant comprising a compound represented by Chemical Formula 1:07-28-2011
20120248068Process Module for the Inline-Treatment of Substrates - The present invention relates to an apparatus and a method for the fluidic inline-treatment of flat substrates with at least one process module. In particular, the invention relates to such a treatment during the gentle and controlled transport of the substrates, wherein the treatment can also just relate to the transport of the substrates.10-04-2012
20120211467NANOMOTOR-BASED PATTERNING OF SURFACE MICROSTRUCTURES - Among other things, methods, systems and apparatus are described for implementing nanomotor-based micro- and nanofabrication. In one aspect, a method of fabricating nanoobjects comprises functionalizing a nanomotor with a reagent. The method also includes controlling a movement of the functionalized nanomotor in a solution containing material to react with the reagent to induce a localized deposition or precipitation of a product onto a surface of a substrate or etching of the substrate.08-23-2012
20120074102SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - Phosphoric acid, sulfuric acid, and water are supplied to a flow path for a processing liquid from a first tank to a substrate held by a substrate holding unit. As a result, a mixed liquid containing the phosphoric acid, the sulfuric acid, and the water is generated. A liquid containing the sulfuric acid and a liquid containing the water are mixed together in the flow path, and the temperature of the mixed liquid containing the phosphoric acid, the sulfuric acid, and the water rises. A mixed liquid containing a phosphoric acid aqueous solution whose temperature is close to its boiling point is supplied to the substrate held by the substrate holding unit.03-29-2012
20120074101SUBSTRATE TREATMENT METHOD AND SUBSTRATE TREATMENT APPARATUS - The substrate treatment method is for treating a substrate with a chemical liquid in a treatment chamber. The method includes a higher temperature chemical liquid supplying step, and a rinse liquid supplying step after the higher temperature chemical liquid supplying step. The rinse liquid supplying step includes: a peripheral edge portion treating step of supplying the rinse liquid selectively onto a center portion of the front surface of the substrate so that a chemical liquid treatment is inhibited on the center portion while being allowed to proceed on a peripheral edge portion of the front surface of the substrate; and an entire surface rinsing step of spreading the rinse liquid over the entire front surface of the substrate to replace the chemical liquid with the rinse liquid on the entire front surface of the substrate after the peripheral edge portion treating step.03-29-2012
20110120974Method For Atomizing A Surface Of A Substrate - A method for atomizing a surface of a substrate includes the steps of: coating a proper quantity of chemical solvent onto the surface of the substrate to react with substrate material of the substrate for a certain time; then rinsing off the remaining chemical solvent on the substrate with water to obtain an atomized surface on the substrate. Therefore, it can achieve a simple process, a high productivity and a low manufacture cost without any effect on properties of the substrate.05-26-2011
20100025373PYROGENIC SILICA PRODUCED IN A PRODUCTION FACILITY WITH HIGH CAPACITY - A large scale process for preparing fumed silica with consistent product parameters wherein a silica precursor compound is fed to a burner at ≧100 Kg/h along with a combusting gas at ≧300 m02-04-2010
20110309051APPARATUS AND METHOD FOR WET TREATMENT OF AN OBJECT AND FLUID DIFFUSION PLATE AND BARREL USED THEREIN - An apparatus for wet treatment of an object includes a treatment bath in which an object to be treated is received and treated; a plurality of object supporting rods rotatably installed in the treatment bath and having a plurality of slots formed in surfaces thereof to support an object so that the object stands in a direction perpendicular to a bottom surface of the treatment bath; and a rotating means connected to the object supporting rods to rotate the object in a circumferential direction by rotating the object supporting rods. Treatment fluid injecting holes for injecting a treatment fluid to the object and treatment fluid channels for supplying the treatment fluid to the treatment fluid injecting holes are formed in the object supporting rods. Thus, a dead zone in the treatment bath is removed and the treatment fluid may flow uniformly and smoothly, which improves treatment efficiency and treatment uniformity.12-22-2011
20130015160RESURFACING AGENTAANM Smith; MarcusAACI Desert Hot SpringAAST CAAACO USAAGP Smith; Marcus Desert Hot Spring CA US - A plastic, polycarbonate or like material resurfacing or clarifying agent, containing a mixture of acetone and at least one of xylene, toluene, butanone, methyl ethyl ketone, and naphtha is described. The acetone has a weight percentage of about 50% to about 78% of the mixture. The at least one of xylene, toluene, butanone, methyl ethyl ketone, and naphtha has a weight percentage of about 20% to about 45% of the agent. The at least one of xylene, toluene, butatone, methyl ethyl ketone, and naphtha contains one or any combination of toluene, xylene, and MEK with a weight percentage of about 25% of the agent. The agent may further contain isopropyl alcohol. The isopropyl alcohol preferably has a weight percentage of about 1% to about 8% of the agent.01-17-2013

Patent applications in class NONGASEOUS PHASE ETCHING OF SUBSTRATE

Patent applications in all subclasses NONGASEOUS PHASE ETCHING OF SUBSTRATE