Class / Patent application number | Description | Number of patent applications / Date published |
216069000 | Using microwave to generate the plasma | 31 |
20090008363 | Plasma processing apparatus and a plasma processing method - In an oxide film etching process, a plasma having a suitable ratio of CF | 01-08-2009 |
20090065480 | Plasma Processing Apparatus - Provided is a plasma processing apparatus which can perform uniform processing even when a substrate to be processed has a large area. The plasma processing apparatus propagates microwaves introduced into wave guide tubes to dielectric plates through slots, and performs plasma processing to the surface of the substrate by converting a gas supplied into a vacuum container into the plasma state. In the plasma processing apparatus, a plurality of waveguide tubes are arranged in parallel, a plurality of dielectric plates are arranged for each waveguide tube, and partitioning members formed of a conductor and grounded are arranged between the adjacent dielectric plates. The in-tube wavelength of the waveguide tube is adjusted to be an optimum value by vertically moving a plunger. Furthermore, unintended plasma generation is eliminated in a space between the dielectric plate and the adjacent member, and stable plasma can be efficiently generated. As a result, high-speed and uniform processings, such as etching, film-forming, cleaning, ashing, can be performed. | 03-12-2009 |
20090114621 | METHOD AND DEVICE FOR THE PLASMA TREATMENT OF MATERIALS - The invention relates to a method and a device ( | 05-07-2009 |
20090134120 | Plasma Processing Method and Plasma Processing Apparatus - A plasma processing apparatus in which consumption of expensive krypton and xenon gases is suppressed as much as possible while reducing damage on a workpiece during plasma processing. In plasma processing of a substrate using a rare gas, two or more kinds of different rare gases are employed, and an inexpensive argon gas is used as one rare gas and any one or both of krypton and xenon gases having a larger collision cross-sectional area against electron than that of the argon gas is used as the other gas. Consequently, consumption of expensive krypton and xenon gases is suppressed as much as possible and damage on a workpiece is reduced during plasma processing. | 05-28-2009 |
20090152243 | PLASMA PROCESSING APPARATUS AND METHOD THEREOF - [Problem] To provide a plasma processing apparatus and a method thereof, which is capable of generating plasma evenly on the lower surface of a dielectric. | 06-18-2009 |
20090212018 | Apparatus and method for producing microcomponents and use of - An apparatus and the use of such an apparatus and method for producing microcomponents with component structures are presented which are generated in a process chamber on a substrate according to the LIGA method for example and are stripped from the enclosing photoresist with the help of a cooled remote plasma source. | 08-27-2009 |
20100096362 | PLASMA PROCESSING APPARATUS, POWER SUPPLY APPARATUS AND METHOD FOR OPERATING PLASMA PROCESSING APPARATUS - In a plasma processing apparatus 10, a microwave transmitted from a microwave source | 04-22-2010 |
20100116790 | Device and method for locally producing microwave plasma - A device for locally producing microwave plasma. The device comprises at least one microwave feed that is surrounded by at least one dielectric tube. At least one of the dielectric tubes, such as an outer dielectric tube, is partially surrounded by a metal jacket. A locally delimited plasma is produced by the device by shielding microwaves. | 05-13-2010 |
20100230387 | Shower Plate, Method for Manufacturing the Shower Plate, Plasma Processing Apparatus using the Shower Plate, Plasma Processing Method and Electronic Device Manufacturing Method - Occurrence of a back-flow of plasma or ignition of gas for plasma excitation in a longitudinal hole portion can be prevented more completely, and a shower plate in which efficient plasma excitation is possible is provided. In shower plate | 09-16-2010 |
20100301012 | DEVICE AND METHOD FOR PRODUCING MICROWAVE PLASMA WITH A HIGH PLASMA DENSITY - A device for producing microwave plasma with a high plasma density. The device comprises at least one microwave supply that is surrounded by an outer dielectric tube. The microwave supply is surrounded by, in addition to the outer dielectric tube, at least one inner dielectric tube that extends inside the outer dielectric tube. The outer dielectric tube and the at least one inner dielectric tube form at least one area that is suitable for receiving and conducting a fluid. The device can be cooled by a fluid. A process gas can be fed into the plasma region by the outer dielectric tube. | 12-02-2010 |
20110017706 | PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS - A wafer is disposed in a chamber, a plasma generating space is formed in the chamber, plasma processing is performed to the front surface of the processing object while keeping at least the front surface of the processing object in contact with the plasma generating space. The plasma processing is performed with the plasma generating space being kept in contact with at least the peripheral region of the back surface of the processing object. | 01-27-2011 |
20110240598 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus | 10-06-2011 |
20110266257 | PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS - A plasma etching method uses a plasma etching apparatus including a process chamber, a susceptor, a microwave supplying portion, a gas supplying portion, an evacuation apparatus, a bias electric power supplying portion that supplies alternating bias electric power to the susceptor, and a bias electric power control portion that controls the alternating bias electric power, wherein the bias electric power control portion controls the alternating bias electric power so that supplying and disconnecting the alternating bias electric power to the susceptor are alternately repeated to allow a ratio of a time period of supplying the alternating bias electric power with respect to a total time period of supplying the alternating bias electric power and disconnecting the alternating bias electric power to be 0.1 or more and 0.5 or less. | 11-03-2011 |
20120012556 | PLASMA ETCHING APPARATUS AND PLASMA ETCHING METHOD - A plasma etching apparatus | 01-19-2012 |
20120067845 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - There is provided a plasma processing apparatus capable of stably generating plasma by suppressing oscillation of a plasma potential, and capable of preventing contamination caused by sputtering a facing electrode made of metal. A high frequency bias power is applied to an electrode within a mounting table for mounting a target object thereon. An extended protrusion | 03-22-2012 |
20120160809 | PLASMA PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - A microwave supply unit | 06-28-2012 |
20120279943 | PROCESSING CHAMBER WITH COOLED GAS DELIVERY LINE - A method and apparatus for processing a substrate is provided. In one embodiment, the apparatus is in the form of a processing chamber that includes a chamber body having a processing volume defined therein. A substrate support, a gas delivery tube assembly and a plasma line source are disposed in the processing volume. The gas delivery tube assembly includes an inner tube is disposed in an outer tube. The inner tube has a passage for flowing a cooling fluid therein. The outer tube has a plurality of gas distribution apertures for providing processing gas into the processing volume. | 11-08-2012 |
20130082030 | Plasma Tuning Rods in Microwave Resonator Plasma Sources - The invention provides a plurality of resonator subsystems. The resonator subsystems can comprise one or more resonant cavities configured to couple electromagnetic (EM) energy in a desired EM wave mode to plasma by generating resonant microwave energy in a resonant cavity adjacent the plasma. The resonator subsystem can be coupled to a process chamber using one or more interface subsystems and can comprise one or more resonant cavities, and each resonant cavity can have a plurality of plasma tuning rods coupled thereto. Some of the plasma tuning rods can be configured to couple the EM-energy from one or more of the resonant cavities to the process space within the process chamber. | 04-04-2013 |
20130256272 | LOW ELECTRON TEMPERATURE MICROWAVE SURFACE-WAVE PLASMA (SWP) PROCESSING METHOD AND APPARATUS - A surface wave plasma (SWP) source couples pulsed microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (T | 10-03-2013 |
20130306599 | RADICAL ETCHING APPARATUS AND METHOD - A radical etching apparatus comprising a vacuum chamber for a substrate to be treated; a pipe pathway, connected to the vacuum chamber, a zone for generating plasma and with a gas introduction device through which N | 11-21-2013 |
20140008326 | PLASMA GENERATION DEVICE, PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma generation device has a microwave generation device which generates microwave, a waveguide tube having hollow interior and connected to the microwave device such that the tube has longitudinal direction in transmission direction of microwave and rectangular cross section in direction orthogonal to the transmission direction, a phase-shifting device which cyclically shifts phase of standing wave generated in the tube by microwave, and a gas supply device which supplies processing gas into the tube. The tube has antenna portion having one or more slot holes which release plasma generated by microwave to the outside, the slot hole is formed on wall forming short or long side of the antenna portion, and the tube plasmatizes the gas in atmospheric pressure state supplied into the tube by the microwave in the slot hole and releases the plasma to the outside from the slot hole. | 01-09-2014 |
20140124478 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - The present disclosure provides a plasma processing apparatus, including: a processing chamber; an oscillator configured to output high-frequency power; a power supply unit configured to supply the high-frequency power from a specific plasma generating location into the processing chamber; a magnetic field forming unit provided outside the processing chamber and configured to forming a magnetic field at least at the specific plasma generating location; and a control unit configured to control the magnetic field formed by the magnetic field forming unit such that a relationship between an electron collision frequency fe of plasma generated in the processing chamber and a cyclotron frequency fc is fc>fe. | 05-08-2014 |
20140151334 | METHOD AND APPARATUS FOR PROCESSING CARBON NANOTUBES - A method for processing carbon nanotubes includes positioning in a treatment chamber of a carbon nanotube processing apparatus a substrate having multiple carbon nanotubes bundled together and oriented substantially perpendicular to a surface of the substrate, and introducing a microwave into the treatment chamber from a planar antenna having multiple microwave radiation holes such that plasma of an etching gas is generated and that the plasma etches the carbon nanotubes starting from one end of the carbon nanotubes bundled together. | 06-05-2014 |
20140251955 | MICROWAVE WAVEGUIDE APPARATUS, PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A microwave waveguide apparatus for generating plasma includes a waveguide which has first and second ends and propagates microwave from input end such that the microwave propagates from the first end to the second end, a circulator device having a first port, a second port coupled to the first end, and a third port coupled to the second end, the circulator device being structured such that the microwave is received at the first port, propagates from the second port to the first end, is received at the third port from the second end and is returned toward the input end, and a matching device which is interposed between the input end and the circulator device and reflects part of the microwave received at the third port and returned toward the input end to the first port. The waveguide has a slot-hole extending along the microwave propagation direction in the waveguide. | 09-11-2014 |
20150291425 | METHOD AND APPARATUS FOR PROCESSING CARBON NANOTUBES - A method for processing carbon nanotubes includes positioning in a treatment chamber of a carbon nanotube processing apparatus a substrate having multiple carbon nanotubes bundled together and oriented substantially perpendicular to a surface of the substrate, and introducing a microwave into the treatment chamber from a planar antenna having multiple microwave radiation holes such that plasma of an etching gas is generated and that the plasma etches the carbon nanotubes starting from one end of the carbon nanotubes bundled together. | 10-15-2015 |
20150371828 | LOW COST WIDE PROCESS RANGE MICROWAVE REMOTE PLASMA SOURCE WITH MULTIPLE EMITTERS - A remote plasma source has an array of low cost microwave magnetron heads coupled to individual conical, horn or other microwave emitter antennas above a gas shower head of a workpiece processing chamber. | 12-24-2015 |
20160027620 | METHOD AND APPARATUS FOR ESC CHARGE CONTROL FOR WAFER CLAMPING - A plasma processing method and apparatus are provided in which current spikes associated with application of a voltage to an electrostatic chuck (ESC) are minimized or reduced when the processing plasma is present. According to an example, the voltage is applied to the ESC after the processing plasma is struck, however the voltage is ramped or increased in a step-wise manner to achieve the desired final ESC voltage. In an alternate embodiment, the ESC voltage is at least partially applied before striking of the plasma for processing the wafer. By reducing current spikes associated with application of the voltage to the ESC during the presence of the processing plasma, transfer or deposition of particles on the wafer can be reduced. | 01-28-2016 |
20160093474 | SUBSTRATE PROCESSING METHOD - A substrate processing method for performing a plasma process on a processing target substrate by a plasma processing apparatus is provided. The plasma processing apparatus comprises: a processing chamber; a gas supply unit; a mounting table; a microwave generator; a dielectric plate; a slot antenna plate; a wavelength shortening plate; and a microwave supply unit, and the microwave supply unit comprises a coaxial waveguide and a distance varying device. The substrate processing method comprises: mounting the processing target substrate on the mounting table; generating microwave by the microwave generator; and varying, by the distance varying device, a distance in a radial direction between a part of an outer surface of an inner conductor and a facing member facing a part of an outer surface of the inner conductor in order to uniformly generate plasma under a lower surface of the dielectric plate in the processing chamber. | 03-31-2016 |
216070000 | Magnetically enhancing the plasma | 3 |
20100089871 | PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD AND STORAGE MEDIUM - Provided is a plasma processing apparatus including a processing vessel accommodating a target object; a microwave generator configured to generate a microwave; a waveguide configured to induce the microwave to the processing vessel; a planar antenna having a plurality of microwave radiation holes through which the microwave induced to the waveguide is radiated toward the processing vessel; a microwave transmission plate configured to serve as a ceiling wall of the processing vessel and transmit the microwave passed from the microwave radiation holes of the planar antenna; a processing gas inlet unit configured to introduce a processing gas into the processing vessel; and a magnetic field generating unit positioned above the planar antenna and configured to generate a magnetic field within the processing vessel and control a property of plasma of the processing gas by the magnetic field, the plasma being generated by the microwave within the processing vessel. | 04-15-2010 |
20110079582 | PLASMA GENERATING DEVICE AND METHOD - An object of the invention is to provide a plasma generating device and method for generating plasma through electrodeless discharge within a long tubule and carrying out a plasma process on the inside of the long tubule. The plasma generating device has a container | 04-07-2011 |
20120103939 | METHODS AND APPARATUS FOR CONTROLLING PHOTORESIST LINE WIDTH ROUGHNESS - The present invention provides methods and an apparatus for controlling and modifying line width roughness (LWR) of a photoresist layer. In one embodiment, an apparatus for controlling a line width roughness of a photoresist layer disposed on a substrate includes a chamber body having a top wall, side wall and a bottom wall defining an interior processing region, a microwave power generator coupled to the to the chamber body through a waveguild, and one or more coils or magnets disposed around an outer circumference of the chamber body adjacent to the waveguide, and a gas source coupled to the waveguide through a gas delivery passageway. | 05-03-2012 |