| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 216052000 | MECHANICALLY SHAPING, DEFORMING, OR ABRADING OF SUBSTRATE | 56 |
| 20090057267 | Imprint lithography - A chuck apparatus for holding a substrate is the disclosed. The chuck apparatus includes a first surface portion on which the substrate is to be held and a second surface portion adjacent to the first surface portion and extending at least partially around an edge of the first surface portion and which, in use, is arranged to deflect gas over the first surface portion and thus the substrate that is to be held on the first surface portion. | 03-05-2009 |
| 20100320169 | Balloon Cones and Waists Thinning Methodology - Medical balloons and balloon preforms are made by methods which include the step of selectively removing material from the proximal and/or distal ends of a segment. In the case of a thermoplastic material characterized by one or more glass transition temperatures, the segment may optionally be maintained at a temperature below the glass transition temperature of the segment during the material removal step. | 12-23-2010 |
| 20090095711 | MICROFABRICATION APPARATUS AND DEVICE MANUFACTURING METHOD - A microfabrication apparatus for pressing an original plate including a pattern down on a substrate to transfer the pattern on the substrate includes a first measurement unit for measuring relative positional displacement between the substrate and the plate above the substrate, a position correction unit for correcting relative position between the substrate and the plate such that the pattern is to be transferred on a first predetermined position of the substrate based on the relative positional displacement measured by the first measurement unit, a pressing unit for pressing the plate above the substrate down on the substrate to transfer the pattern on the substrate in a state that the relative positional displacement between the substrate and the plate is corrected by the position correction unit, and a second measurement unit for measuring relative positional relationship between the pattern transferred on the substrate and a pattern previously formed on the substrate. | 04-16-2009 |
| 20080296256 | THREE-DIMENSIONAL COLD PLATE AND METHOD OF MANUFACTURING SAME - A three-dimensional cold plate assembly and method of manufacturing the same is disclosed. The cold plate assembly includes a metallic substrate having a top side and a bottom side and a three-dimensional molded contoured plastic body having a top side and a bottom side. The bottom side of the metallic substrate is bonded to the top side of the plastic body. The bottom side of the plastic body is contoured to substantially complementarily mate with a profile of heat generating components in an electronic device. The method of manufacturing the cold plate includes the steps of pretreating and cleaning the metallic substrate, etching the metallic substrate and overmolding the plastic body onto the bottom side of the metallic substrate to provide a bottom contoured side of the plastic body that substantially complementarily mates with the profile of heat generating components in an electronic device. | 12-04-2008 |
| 20090212011 | MICRO-LENS ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THEREOF - A micro-lens substrate having a precise micro-lens array suitable for higher resolution, the micro-lens array substrate of high quality without having a distortion, and a method for manufacturing thereof are provided. | 08-27-2009 |
| 20100219159 | PLASMA SOURCE WITH INTEGRAL BLADE AND METHOD FOR REMOVING MATERIALS FROM SUBSTRATES - An atmospheric pressure plasma source includes a body including a distal end, a blade extending from the distal end and terminating at a blade edge, a plasma-generating unit, and a plasma outlet communicating with the plasma-generating unit and positioned at the distal end. The plasma outlet is oriented at a downward angle generally toward the blade edge, wherein the plasma outlet provides a plasma path directed generally toward the blade edge. The plasma may be applied to the coating at an interface between the coating and an underlying substrate. While applying the plasma, the blade is moved into contact with the coating at the interface, wherein the blade assists in separating the coating from the substrate while one or more components of the coating react with energetic species of the plasma. | 09-02-2010 |
| 20110049097 | IMPRINT LITHOGRAPHY METHOD AND APPARATUS - In an embodiment, there is provided an imprint lithography method that includes providing a first amount of imprintable medium on a first area of a substrate, the first amount of imprintable medium, when fixed, having a first etch rate; and providing a second amount of imprintable medium on a second, different area of the substrate, the second amount of imprintable medium, when fixed, having a second, different etch rate. | 03-03-2011 |
| 20110132871 | SHEAR SENSORS AND USES THEREOF - The present invention relates to shear sensors. In particular, the present invention relates to deformable sensors for measurement of shear forces during chemical mechanical polishing. | 06-09-2011 |
| 20100181289 | Forming a Layer on a Substrate - The present invention is directed to a method of forming an imprinting layer on a substrate including high resolution features, and transferring the features into a solidified region of the substrate. Desired thickness of the residual layer may be minimized in addition to visco-elastic behavior of the material. | 07-22-2010 |
| 20110062112 | PROCESS FOR FABRICATING A MONOLAYER OR MULTILAYER METAL STRUCTURE IN LIGA TECHNOLOGY, AND STRUCTURE OBTAINED - The invention relates to a process for fabricating a monolayer or multilayer metal structure in LIGA technology, in which a photoresist layer is deposited on a flat metal substrate, a photoresist mold is created by irradiation or electron or ion bombardment, a metal or alloy is electroplated in this mold, the electroformed metal structure is detached from the substrate and the photoresist is separated from this metal structure, wherein the metal substrate is used as an agent involved in the forming of at least one surface of the metal structure other than that formed by the plane surface of the substrate. | 03-17-2011 |
| 20120205343 | METHOD FOR PRODUCING SILICA-BASED GLASS SUBSTRATE FOR IMPRINT MOLD, AND METHOD FOR PRODUCING IMPRINT MOLD - The present invention relates to a method for producing a silica glass substrate for an imprint mold, containing: obtaining a glass body from a glass-forming raw material containing an SiO | 08-16-2012 |
| 20120152897 | METHOD OF THINNING GLASS SUBSTRATE - A method of thinning a glass substrate includes following steps. A glass substrate is provided. A first etching process is performed on the glass substrate, so as to reduce a thickness of the glass substrate. A polishing process is performed on the thinned glass substrate, so that the thickness of the glass substrate is reduced again. A first treated surface is formed on the glass substrate. The center-line average roughness of the first treated surface ranges from about 100 angstroms (Å) to about 300 angstroms (Å). A second etching process is performed on the first treated surface of the glass substrate, so as to form a second treated surface. The center-line average roughness of the second treated surface ranges from about 10 angstroms (Å) to about 50 angstroms (Å). | 06-21-2012 |
| 20100288729 | Methods for Manufacturing a Microstructure - Methods for manufacturing a microstructure, wherein use is made of a powder blasting and/or etching and a single mask layer with openings and structures of varying dimensions, wherein the mask layer at least at one given point in time has been wholly worn away within at least one region by mask erosion while the microstructure is not yet wholly realized. Use can be made of a combination of ‘vertical’ erosion, i.e. parallel to the thickness direction and ‘horizontal’ erosion, i.e. perpendicularly of the thickness direction, of the mask layer. The horizontal mask erosion occurs at the edges of the mask structure. | 11-18-2010 |
| 20100012622 | Adaptive Nanotopography Sculpting - Adaptive nanotopography sculpting may be used to alter nanotopography and roughness without altering the nominal shape of a surface. Generally, adaptive nanotopography sculpting provides a surface having desired shape characteristics. Topography of a first surface is mapped to provide a density map. The density map is evaluated to provide a drop pattern for dispensing polymerizable material on the first surface. The polymerizable material is solidified and etched to provide a second surface having the desired shape characteristics. | 01-21-2010 |
| 20120255931 | Method for producing a composite body having a self-supporting surface - A method is provided for producing a composite body made of at least one self-supporting surface and at least one element connected to the surface in a coating process. The method includes providing a negative mold including the at least one element of the composite body, selectively ablating a surface of the negative mold to be coated with the at least one self-supporting surface by a defined first thickness so that the at least one element stands out from the surface as a projection at least in areas, depositing one or more layers for forming the at least one self-supporting surface having a defined second thickness, wherein an elevation forms in the area of the projection of the at least one element, leveling the coated surface, wherein the elevation is removed, and selectively removing at least parts of the negative mold. | 10-11-2012 |
| 20100314356 | METHOD OF REUSING A CONSUMABLE PART FOR USE IN A PLASMA PROCESSING APPARATUS - In a method of reusing a consumable part for use in a plasma processing apparatus, a silicon carbide (SiC) lump is formed by depositing SiC by chemical vapor deposition (CVD), and a consumable part for the plasma processing apparatus is manufactured by processing the SiC lump, the consumable part having a predetermined shape. A first plasma process is performed on a substrate by using the manufactured consumable part. A surface of the consumable part that has been eroded by the plasma process is subjected to a clean process for a specific period of time. SiC is deposited on the cleaned surface of the eroded consumable part by CVD. A consumable part having the predetermined shape is remanufactured by processing the eroded consumable part having the surface on which the SiC is deposited. A second plasma process is performed on a substrate by using the remanufactured consumable part. | 12-16-2010 |
| 20120318772 | DIE, PROCESS FOR PRODUCING DIE, AND PROCESS FOR PRODUCING ANTIREFLECTION FILM - A method is provided for manufacturing a mold that has a porous alumina layer over its surface, which is capable of preventing formation of pits (recesses). A moth-eye mold manufacturing method of an embodiment of the present invention is a method for manufacturing a mold which has a porous alumina layer over its surface, including the steps of: providing a mold base which includes an aluminum base and an aluminum film deposited on a surface of the aluminum base, the aluminum film having a purity of not less than 99.99 mass %; anodizing a surface of the aluminum film to form a porous alumina layer which has a plurality of minute recessed portions; and bringing the porous alumina layer into contact with an etching solution to enlarge the plurality of minute recessed portions of the porous alumina layer. | 12-20-2012 |
| 20120325775 | METHOD FOR THE PRODUCTION OF THREE-DIMENSIONAL MICROSTRUCTURES - A method for producing three-dimensional microstructures in which a source material is applied on a substrate, with a property changing by exposure with electromagnetic radiation. A three-dimensional source structure is written via spatially-resolving exposure in the source material, the source material is removed except for the source structure, and the source structure is molded with a target material, from which the microstructure to be produced is made. Here, a shell structure is provided surrounding the microstructure to be produced, with the source structure being created as the shell structure or the shell structure is produced using the source structure, and subsequently the target material is inserted into the shell structure. | 12-27-2012 |
| 216053000 | Nongaseous phase etching | 38 |
| 20090194504 | METHOD FOR PRODUCING ABRASIVE COMPOSITION - The present invention provides a method for producing an abrasive composition, which can control dishing, a method for polishing a substrate using the abrasive composition, and a method for producing a substrate. In the method for producing an abrasive composition, two kinds of preliminary compositions (A) and (B) having different compositions are mixed in different mixing ratios to produce plural kinds of abrasive compositions, wherein a composition containing (a) an abrasive grain, (b) an oxidizing agent, (c) one or more acids selected from the group consisting of amino acids, organic acids and inorganic acids, and (d) a surfactant is used as the preliminary composition (A); and a composition containing (a) an abrasive grain and (b) an oxidizing agent is used as the preliminary composition (B). The preliminary composition (B) may contain the foregoing acid (c) and surfactant (d). In this case, at least one of (a), (b), (c) and (d) in the preliminary composition (A) has a different concentration from that in the preliminary composition (B). | 08-06-2009 |
| 20090289033 | Polishing composition containing polyether amine - The inventive chemical-mechanical polishing system comprises a polishing component, a liquid carrier, and a polyether amine. The inventive method comprises chemically-mechanically polishing a substrate with the aforementioned polishing system. | 11-26-2009 |
| 20110192819 | System and method for the manufacture of surgical blades - A method for manufacturing surgical blades from either a crystalline or poly-crystalline material, preferably in the form of a wafer, is disclosed. The method includes preparing the crystalline or poly-crystalline wafers by mounting them and machining trenches into the wafers. The methods for machining the trenches, which form the bevel blade surfaces, include a diamond blade saw, laser system, ultrasonic machine, and a hot forge press. The wafers are then placed in an etchant solution which isotropically etches the wafers in a uniform manner, such that layers of crystalline or poly-crystalline material are removed uniformly, producing single or double bevel blades. Nearly any angle can be machined into the wafer which remains after etching. The resulting radii of the blade edges is 5-500 nm, which is the same caliber as a diamond edged blade, but manufactured at a fraction of the cost. | 08-11-2011 |
| 20100147799 | CHEMICAL MECHANICAL POLISHING METHOD - In an embodiment, a chemical mechanical polishing method for a substrate having a first layer and a stepped portion. A surface of the first layer is positioned above an upper face of the stepped portion. A polishing process for selectively removing the stepped portion is performed on the first layer by using a first slurry composition that has a self-stopping characteristic so that the first layer is changed into a second layer having a substantially flat surface. A second polishing process is performed using a second slurry composition that does not have the self-stopping characteristic, until the upper face of the stepped portion is exposed. | 06-17-2010 |
| 20130037515 | SAPPHIRE POLISHING SLURRY AND SAPPHIRE POLISHING METHOD - Disclosed is a polishing slurry for sapphire polishing that is capable of obtaining polishing speeds and smooth surfaces during the polishing of sapphire substrates that are equivalent to or better than in prior polishing processes even if the number of polishers and polishing hours are reduced. Also disclosed is a sapphire substrate polishing method. The slurry includes alumina abrasives and has a pH adjusted to the range of 10.0 to 14.0, and the sapphire is polished by means of the CMP technique by applying said slurry. The aforementioned alumina abrasives more preferably include at least α-alumina, and the content thereof is more preferably 0.01 to 50 wt %. The mean particle size of the aforementioned alumina abrasives is preferably 0.05 to 10 μm. | 02-14-2013 |
| 20130032572 | SLURRY FOR POLISHING PHASE-CHANGE MATERIALS AND METHOD FOR PRODUCING A PHASE-CHANGE DEVICE USING SAME - The present invention relates to slurry for polishing crystalline phase-change materials and to a method for producing a phase-change device using the same. The slurry for polishing crystalline phase-change materials according to one embodiment of the present invention comprises an abrasive, an alkaline abrasive enhancer, an oxidizing agent having a standard reduction potential higher than that of perchlorates, and ultrapure water. In addition, the method for producing a phase-change device according to one embodiment of the present invention comprises the following steps: preparing a substrate; forming a crystalline phase-change material film on the substrate; and removing the phase-change material film through a chemical-mechanical polishing process using slurry for polishing phase-change materials, which comprises an abrasive, an alkaline abrasive enhancer, an oxidizing agent having a standard reduction potential higher than that of perchlorates, and ultrapure water. | 02-07-2013 |
| 20130032573 | METHOD FOR POLISHING SILICON WAFER AND POLISHING LIQUID THEREFOR - Disclosed is a method for polishing a silicon wafer, wherein a surface to be polished of a silicon wafer is rough polished, while supplying a polishing liquid, which is obtained by adding a water-soluble polymer to an aqueous alkaline solution that contains no free abrasive grains, to a polishing cloth. Consequently, the surface to be polished can be polished at high polishing rate and the flatness of the edge portion including roll-off and roll-up can be controlled. | 02-07-2013 |
| 20100096360 | COMPOSITIONS AND METHODS FOR BARRIER LAYER POLISHING - Methods and apparatus are provided for polishing barrier layer materials. In one embodiment, a composition is provided for removing at least a barrier material from a substrate surface, including includes a base composition, a silica abrasive, a solvent, a pH between about 7 and about 10, and one or more components selected from the group of a metal passivating compound, an oxidizer, and an alumina abrasive. The composition may be used to chemical mechanical polishing process a substrate surface having a ruthenium-based barrier and one or more material selected from the group of a polysilicon layer, a dielectric layer, or metal layer. | 04-22-2010 |
| 20130087530 | THREE-DIMENSIONAL FRACTAL GRADUATED-BRANCHING HIERARCHICAL STRUCTURES AND FABRICATION METHOD THEREOF - A method to fabricate a hierarchical graduated-branched structure that grows in a three-dimensional pattern down to fractal-branching, nano-size level is detailed. The fractal patterning is accomplished on a three-dimensional (i.e., non-planar) surface, by exposing the surface to a properly focused particle beam, which causes the spontaneous growth of graduated branches all over the surface. The structure can be fabricated with a single material and the fractal-patterning is done in a one step process. No addition of material is required for the formation of each branch. The fractal graduated branching structure can then be molded in order to produce replicas. | 04-11-2013 |
| 20130119015 | MANUFACTURING METHOD OF A GLASS SUBSTRATE FOR A MAGNETIC DISK - An object of the invention is to effectively remove particles on the glass substrate surfaces, even in the case wherein abrasive particles having a small particle size is used in the polishing step of the glass substrate and a supersonic treatment is performed at a high frequency at the supersonic cleaning step after the polishing step. In a manufacturing method of a glass substrate for a magnetic disk comprising a polishing step for performing polishing of the glass substrate and a supersonic cleaning step for performing supersonic cleaning of the glass substrate after the polishing step, the polishing step uses abrasive particles having a particle size of 10 nm to 30 nm and a first supersonic cleaning is performed at a frequency of 300 kHz to 1,000 kHz to form secondary particles and then a second supersonic cleaning is performed at a frequency of 30 kHz to 100 kHz in the supersonic cleaning step. | 05-16-2013 |
| 20100276392 | CMP SYSTEM UTILIZING HALOGEN ADDUCT - The invention provides a method of polishing a substrate comprising (i) providing a chemical-mechanical polishing system comprising (a) a polishing component selected from an abrasive, a polishing pad, or both an abrasive and a polishing pad, (b) an aqueous carrier, and (c) the halogen adduct resulting from the reaction of (1) an oxidizing agent selected from the group consisting of iodine, bromine, and a combination thereof, and (2) a carbon acid having a pKa of about 3 to about 14, wherein the halogen adduct is present in a concentration of about 0.001 mM or more in the aqueous carrier, (ii) contacting the substrate with the polishing system, and (iii) abrading at least a portion of the surface of the substrate with the polishing system to polish the substrate. | 11-04-2010 |
| 20080272088 | POLISHING COMPOUND AND POLISHING METHOD - To provide a polishing compound that is capable of minimizing formation of scratches on an object to be polished, such as a resin substrate or a metal wiring, and polishing at a high removal rate. To further provide a polishing method that is capable of minimizing formation of scratches on a resin substrate or a metal wiring, and improving the throughput. | 11-06-2008 |
| 20090261065 | COMPONENTS FOR USE IN A PLASMA CHAMBER HAVING REDUCED PARTICLE GENERATION AND METHOD OF MAKING - Components entirely of ceramic with etched surfaces wherein the etched surface has a surface roughness value or at least about 100 microinches (about 2.54 microns) Ra, and methods of forming such. | 10-22-2009 |
| 20120024818 | POLISHING AGENT FOR COPPER POLISHING AND POLISHING METHOD USING SAME - A polishing agent for copper polishing, comprising (A) an inorganic acid with divalent or greater valence, (B) an amino acid, (C) a protective film-forming agent, (D) an abrasive, (E) an oxidizing agent and (F) water, wherein the content of the component (A) is at least 0.08 mol/kg, the content of the component (B) is at least 0.20 mol/kg, the content of the component (C) is at least 0.02 mol/kg, and either or both of the following conditions (i) and (ii) are satisfied.
| 02-02-2012 |
| 20090152240 | CHEMICAL-MECHANICAL POLISHING COMPOSITION AND METHOD FOR USING THE SAME - The invention provides methods of polishing a noble metal-containing substrate with one of two chemical-mechanical polishing compositions. The first chemical-mechanical polishing composition comprises (a) an abrasive comprising α-alumina, (b) about 0.05 to about 50 mmol/kg of ions of calcium, strontium, barium, or mixtures thereof, and (c) a liquid carrier comprising water. The second chemical-mechanical polishing composition comprises (a) an abrasive selected from the group consisting of α-alumina, γ-alumina, δ-alumina, θ-alumina, diamond, boron carbide, silicon carbide, tungsten carbide, titanium nitride, and mixtures thereof, (b) about 0.05 to about 3.5 mmol/kg of ions of calcium, strontium, barium, magnesium, zinc, or mixtures thereof, and (c) a liquid carrier comprising water. | 06-18-2009 |
| 20090095712 | Flattening method and flattening apparatus - A flattening method, by utilizing the advantages of the CARE method and making up for the disadvantages, can perform removal processing of a surface of a workpiece at a sufficient processing rate and can provide a processed surface having enhanced flatness without leaving damage in the processed surface. A flattening method comprises at least two surface removal steps and at least two cleaning steps, the final surface removal step being a catalyst-referred etching step comprising immersing a workpiece in a processing solution containing at least one of hydrohalic acid, hydrogen peroxide water and ozone water, and bringing a surface of a catalyst platen into contact with or close proximity to a surface to be processed of the workpiece to process the surface, said catalyst platen having in a surface a catalyst selected from the group consisting of platinum, gold, a ceramic solid catalyst, a transition metal, glass, and an acidic or basic solid catalyst. | 04-16-2009 |
| 20120292288 | METHOD FOR TREATMENT OF A TEMPORARILY BONDED PRODUCT WAFER - A method for treatment of a product wafer temporarily bonded on a carrier wafer with the following steps: grinding and/or backthinning of the product wafer on one flat side facing away from the carrier wafer to a product wafer thickness D of <150 μm, especially <100 μm, preferably <75 μm, even more preferably <50 μm, especially preferably <30 μm, surface treatment of the flat side with means for reducing an especially structural intrinsic stress of the product wafer. | 11-22-2012 |
| 20080245769 | Nanoparticles and method of making thereof - A method of making nanoparticles includes reacting a first material powder with a second material vapor to form a surface coating on particles of the first material powder, and selectively removing the first material powder to convert the surface coating to third material nanoparticles. | 10-09-2008 |
| 20110204028 | METHOD OF MANUFACTURING A GLASS SUBSTRATE FOR A MAGNETIC DISK - A method for manufacturing a glass substrate for a magnetic disk comprises a surface grinding step of processing a mirror-surface plate glass, having a main surface in the form of a mirror surface, to a required flatness and surface roughness using fixed abrasive particles. The method comprises, before the surface grinding step using the fixed abrasive particles, a surface roughening step of roughening the surface of the mirror-surface plate glass by frosting. | 08-25-2011 |
| 20110204027 | SLURRY MANUFACTURING METHOD, SLURRY AND POLISHING METHOD AND APPARATUS USING SLURRY - Abrasive particles having a particle diameter of not more than 100 nm are manufactured from raw material. The manufactured abrasive particles are separately dispersed, and are coated with a polymer. Coated abrasive particles having a particle diameter of not more than 100 nm are selected and are mixed with a liquid component of a slurry to manufacture the slurry. A pH adjuster and a viscosity agent are added to the slurry. A glass substrate is polished using the manufactured slurry. Since the abrasive particles having a particle diameter of more than 100 nm or an agglomerate of the cohering abrasive particles does not contact the glass and does not cause big scratches on the glass, the generation of the scratches of 70 nm or more on the glass during polishing are suppressed. | 08-25-2011 |
| 20120103937 | METHOD OF MANUFACTURING GLASS SUBSTRATE FOR MAGNETIC STORAGE MEDIUM - A method of manufacturing a glass substrate for a magnetic recording medium, wherein inner and outer circumference end faces of a disk-like glass substrate having a central aperture are at least treated by: a step of grinding, a step of etching, and a step of polishing, wherein the steps are performed in this order. | 05-03-2012 |
| 20100193470 | POLISHING COMPOSITION FOR NICKEL-PHOSPHOROUS MEMORY DISKS - The invention provides a chemical-mechanical polishing composition comprising alpha alumina, fumed alumina, silica, an oxidizing agent that oxidizes nickel-phosphorous, oxalic acid, optionally, tartaric acid, optionally, a nonionic surfactant, optionally, a biocide, and water. The invention also provides a method of chemically-mechanically polishing a substrate comprising contacting a substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate. | 08-05-2010 |
| 20090014415 | COMPOSITIONS AND METHODS FOR RAPIDLY REMOVING OVERFILLED SUBSTRATES - This invention relates to compositions and methods for removing overfilled substrates, preferably at a relatively high removal rates Advantageously, a composition according to the invention can contain an oxidizer, preferably a per-type oxidizer such as a peroxide, periodic acid, and peracetic acid, and may also optionally contain an abrasive. | 01-15-2009 |
| 20100258528 | CHEMICAL MECHANICAL POLISHING OF SILICON CARBIDE COMPRISING SURFACES - Slurry compositions and chemically activated CMP methods for polishing a substrate having a silicon carbide surface using such slurries. In such methods, the silicon carbide surface is contacted with a CMP slurry composition that comprises i) a liquid carrier and ii) a plurality of particles having at least a soft surface portion, wherein the soft surface portion includes a transition metal compound that provides a Mohs hardness ≦6, and optionally iii) an oxidizing agent. The oxidizing agent can include a transition metal. The slurry is moved relative to the silicon carbide comprising surface, wherein at least a portion of eth silicon carbide surface is removed. | 10-14-2010 |
| 20090314744 | CMP method for metal-containing substrates - An aqueous chemical-mechanical polishing composition for polishing metal containing substrates comprising an abrasive particle consisting essentially of a primary particle modified with an aluminosilicate layer, and wherein the abrasive particle has a zeta potential measured at pH 2.3 of about −5 mV to about −100 mV. The composition can be used to polish the surface of a tungsten containing substrate. | 12-24-2009 |
| 20100243603 | SILICON-METAL COMPOSITE MICROMECHANICAL COMPONENT AND METHOD OF MANUFACTURING THE SAME - The invention relates to a method ( | 09-30-2010 |
| 20090145880 | LIQUID JET-GUIDED ETCHING METHOD FOR REMOVING MATERIAL FROM SOLIDS AND ALSO USE THEREOF - The present invention relates to a method for removing material from solids by liquid jet-guided etching. The method according to the invention is used in particular for cutting, microstructuring, doping of wafers or also the metallisation thereof. | 06-11-2009 |
| 20100294742 | Modifications to Surface Topography of Proximity Head - In an example embodiment, a wet system includes a proximity head and a holder for substrate (e.g., a semiconductor wafer). The proximity head is configured to cause a flow of an aqueous fluid in a meniscus across a surface of the proximity head. The surface of the proximity head interfaces with a surface of a substrate through the flow. The surface of the head is composed of a non-reactive material (e.g., thermoplastic) with modifications as to surface topography that confine, maintain, and/or facilitate the flow. The modifications as to surface topography might be inscribed on the surface with a conical scribe (e.g., with a diamond or SiC tip) or melt printed on the surface using a template. These modifications might produce hemi-wicking or superhydrophobicity. The holder exposes the surface of the substrate to the flow. | 11-25-2010 |
| 20110011833 | METHOD OF MANUFACTURING SUBSTRATE FOR INFORMATION STORAGE MEDIA - A manufacturing method is provided for manufacturing a substrate for information storage media having various properties that are demanded for a next generation of information storage media substrate purposes exemplified by perpendicular magnetic recording systems, etc., and above all, having high fracture toughness and a smooth surface at low cost. The method of manufacturing a substrate for information storage media includes a step of preparing glass material of a plate shape containing SiO | 01-20-2011 |
| 20090001051 | Slurry compositions for polishing metal, methods of polishing a metal object and methods of forming a metal wiring using the same - A slurry composition for polishing metal includes a polymeric polishing accelerating agent, the polymeric polishing accelerating agent including a backbone of hydrocarbon and a side substituent having at least one of a sulfonate ion (SO | 01-01-2009 |
| 20080314872 | Chemical-Mechanical Polishing Compositions Containing Aspartame And Methods Of Making And Using The Same - The present invention provides an aqueous CMP slurry composition that comprises abrasive particles and Aspartame. The CMP slurry composition according to the invention is selective for polishing silicon dioxide in preference to silicon nitride from a surface of an article by chemical mechanical planarization. Furthermore, as more Aspartame is added to the slurry, the silicon dioxide rate is either not greatly affected or increases and the silicon nitride rate stays extremely low. In addition to offering selectivity of silicon dioxide to silicon nitride polishing, the present invention provides a method of using Aspartame as a polish accelerant in silicon dioxide polishing. | 12-25-2008 |
| 20080308528 | Nanoporous ultrafine alpha-alumina powders and sol-gel process of preparing same - The present invention provides α-alumina powders comprising α-alumina particles of which at least 80% of the α-alumina particles have a particle size of less than 100 nm. The invention also provides slurries, particularly aqueous slurries, which comprise α-alumina powders of the invention. The invention further provides methods of manufacturing α-alumina powders and α-alumina slurries of the invention and methods of polishing using same. | 12-18-2008 |
| 20090321390 | CHEMICAL MECHANICAL POLISHING OF MOISTURE SENSITIVE SURFACES AND COMPOSITIONS THEREOF - The present invention relates to compositions for chemical mechanical polishing (CMP—also referred to as chemical mechanical planarization) for fabrication of an advanced optical, photonic, or microelectronic device, wherein the composition is a microemulsion. | 12-31-2009 |
| 20100187200 | CMP SENSOR AND CONTROL SYSTEM - Chemical-mechanical polishing (CMP) systems comprising apparatus and methods which allow the physical and chemical characteristics of a CMP slurry to be monitored during the polishing process, both on the pad and in the fresh slurry, are provided. The methods and apparatus of the invention also furnish the CMP operator with real-time information about the polishing process, which can provide insight into various chemical and physical mechanisms involved in chemical-mechanical polishing. The data provided by the sensors also make available valuable information about the stability and reproducibility of the particular CMP process being observed. | 07-29-2010 |
| 20100206843 | RESTORING OF STRENGTH AND WEAR RESISTANCE OF A METAL MATRIX COMPOSITE (MMC) - The present invention relates to a method and an arrangement for restoring strength and wear resistant of a metallic matrix ceramic ( | 08-19-2010 |
| 20120160804 | POLISHING AGENT FOR COPPER POLISHING AND POLISHING METHOD USING SAME - A polishing agent for copper polishing, comprising (A) an inorganic acid with divalent or greater valence, (B) an amino acid, (C) a protective film-forming agent, (D) an abrasive, (E) an oxidizing agent and (F) water, wherein the content of the component (A) is at least 0.08 mol/kg, the content of the component (B) is at least 0.20 mol/kg, the content of the component (C) is at least 0.02 mol/kg, and either or both of the following conditions (i) and (ii) are satisfied.
| 06-28-2012 |
| 20120074098 | Process for Treatment of the Surface of a Dental Implant - A processes for treating the surface of a dental implant wherein the dental implant after the machining operation undergoes a sequence of processes that are associated with the removal of all surface contamination, promoting the conditions to form a texturing and an oxide layer with thickness and composition that induces the interaction between the organism and the implant. | 03-29-2012 |
| 20130020283 | POLISHING SOLUTION FOR COPPER POLISHING, AND POLISHING METHOD USING SAME - The polishing solution for copper polishing of the invention comprises a first organic acid component which is at least one type selected from among an organic acid containing a hydroxyl group, an organic acid salt and an organic acid anhydride, an inorganic acid component which is at least one type selected from among a dibasic or greater inorganic acid and an inorganic acid salt, an amino acid, a protective film-forming agent, an abrasive grain, an oxidizing agent and water, wherein the inorganic acid component content in terms of inorganic acid is 0.15 mass % or greater, the amino acid content is 0.30 mass % or greater, the protective film-forming agent content is 0.10 mass % or greater, based on the entire polishing solution for copper polishing, and the ratio of the first organic acid component content in terms of organic acid with respect to the protective film-forming agent content is at least 1.5. | 01-24-2013 |
