Class / Patent application number | Description | Number of patent applications / Date published |
216048000 | Mask is exposed to nonimaging radiation | 30 |
20080264903 | METHOD OF PRODUCING AN ARTICLE HAVING PATTERNED DECORATIVE COATING - A method for producing an article having a decorative coating includes depositing at least a first coating layer onto at least a portion of a substrate using a physical or chemical vapor deposition method in a vacuum chamber at sub-atmospheric pressure, the first coating layer comprising a first material having a first color. The method also includes patterning the first coating layer using a non-uniform patterning process to form a patterned coating layer having penetrations through which a portion of an underlying surface is visible, the underlying surface comprising a second material and having a second color that is visually contrasting to the first color. The patterned first coating layer comprises a decorative pattern comprising features distinguishable by an unaided human eye. | 10-30-2008 |
20080314871 | HIGH RESOLUTION PLASMA ETCH - A method for fabrication of microscopic structures that uses a beam process, such as beam-induced decomposition of a precursor, to deposit a mask in a precise pattern and then a selective, plasma beam is applied, comprising the steps of first creating a protective mask upon surface portions of a substrate using a beam process such as an electron beam, focused ion beam (FIB), or laser process, and secondly etching unmasked substrate portions using a selective plasma beam etch process. Optionally, a third step comprising the removal of the protective mask may be performed with a second, materially oppositely selective plasma beam process. | 12-25-2008 |
20090114619 | WET ETCHING METHOD AND WET ETCHING APPARATUS - A fine pattern is formed on a surface of a processing object without using photoresist. A wet etching for the processing object in an area to which ultraviolet light is applied is performed by bringing a solution in which nitrous oxide (N | 05-07-2009 |
20090159565 | Method to Pattern Metallized Substrates Using a High Intensity Light Source - A method for delineating a metallization pattern in a layer of sputtered aluminum or sputtered copper using a broad spectrum high intensity light source. The metal is deposited on a polymeric substrate by sputtering, so that it has a porous nanostructure. An opaque mask that is a positive representation of the desired metallization pattern is then situated over the metallization layer, exposing those portions of the metallization layer intended to be removed. The masked metallization layer is then exposed to a rapid burst of high intensity visible light from an arc source sufficient to cause complete removal of the exposed portions of the metallization layer, exposing the underlying substrate and creating the delineated pattern. | 06-25-2009 |
20090308842 | PHOTOCHEMICAL METHOD FOR MANUFACTURING NANOMETRICALLY SURFACE-DECORATED SUBSTRATES - The present invention relates to a photochemical method for manufacturing nanometrically surface-decorated substrates, i.e. the creation of periodic and aperiodic patterns of highly ordered inorganic nanostructures on a substrate. This method is based on the selective photochemical modification of a self-assembled monolayer of metal compound loaded polymer core-shell systems on widely variable substrates. Light exposure through an appropriate mask causes selective chemical modification of the polymer core shell system. By subsequently placing the substrate in an appropriate chemical solution that eradicates the non-modified polymer, the pattern given by the used mask is reproduced on the surface. Finally, the remaining organic matrix is removed and metal salt is transformed to the single metal or metal oxide nanodots by means of gas plasma treatment. | 12-17-2009 |
20100006541 | TRANSMISSION ELECTRON MICROSCOPY SAMPLE ETCHING FIXTURE - A mask fixture for etching an item includes: a top fixture disposed over the item, including a reservoir centered within the top fixture for containing an etchant; a bottom fixture underneath the item to be etched including a recessed surface area centered within the bottom fixture; and an etch-resistant window for holding the item to be etched, the etch-resistant window disposed entirely within the recessed surface area. In addition, a small via centered within and intersecting both the top and bottom fixtures acts as a path for a high intensity light beam. | 01-14-2010 |
20100006542 | Method for Structuring the Surface of a Pressed Sheet or an Endless Strip - The invention relates to a method for producing a metallic pressed sheet or an endless strip, whereby a surface structure is produced by applying a mask for partial chemical passivation followed by chemical surface treatment. The invention also relates to a device for implementing said method. In order to significantly improve the reproducibility and the resolution of the mask obtained, the mask is produced from a UV-hardening lacquer which is applied by a suitable device. The resolution is improved by means of a nozzle matrix which sprays the UV-hardening lacquer in dots, the individual dots forming a pattern as a result of the overspraying thereof, thereby forming the mask to be produced. The UV-hardening lacquer is especially advantageous in that it can be removed from the surface very easily after the etching process, and enables a high reproducibility compared to the conventional screen printing methods. | 01-14-2010 |
20100059477 | Formation of Deep Hollow Areas and use Thereof in the Production of an Optical Recording Medium - At least one hollow zone is formed in a stack of at least one upper layer and one lower layer. The upper layer is patterned to form at least a first hollow region passing through said upper layer. The first hollow region is extended by a second hollow region formed in the lower layer by etching through an etching mask formed on the patterned upper layer. The etching mask is formed by a resin layer, positively photosensitive to an optic radiation of a predetermined wavelength, exposed to the said optic radiation through the stack and developed. The lower and upper layers of the stack are respectively transparent and opaque to said predetermined wavelength so that the patterned upper layer acts as exposure mask for the resin layer. | 03-11-2010 |
20100147797 | SYSTEM AND METHOD FOR PATTERNING A MASTER DISK FOR NANOIMPRINTING PATTERNED MAGNETIC RECORDING DISKS - A system and method for patterning a master disk or “stamper” to be used for nanoimprinting magnetic recording disks uses an air-bearing slider that supports an aperture structure within the optical near-field of a resist layer on a rotating master disk substrate. Laser pulses directed to the input side of the aperture are output to the resist layer. The aperture structure includes a metal film reflective to the laser radiation with the aperture formed in it. The aperture has a size less than the wavelength of the incident laser radiation and is maintained by the air-bearing slider near the resist layer to within the radiation wavelength. The timing of the laser pulses is controlled to form a pattern of exposed regions in the resist layer, with this pattern ultimately resulting in the desired pattern of data islands and nondata islands in the magnetic recording disks when they are nanoimprinted by the master disk. | 06-17-2010 |
20100237045 | PATTERN FORMING METHOD - A pattern forming method includes determining an amount of curable resin to be formed on a substrate, the curable resin having volatility, the amount of the curable resin being determined by a calculation considering volatile loss of the curable resin, the calculation being performed for each of a plurality of regions of the substrate, forming the curable resin having the determined amount on the substrate, the forming the curable resin being performed for each of the plurality of regions of the substrate, contacting the curable resin formed on the substrate with a template, the template including a pattern to be filled with the curable resin by the contacting, and curing the curable resin under a condition where the curable resin is in contact with the template. | 09-23-2010 |
20110024392 | INK-JET INK COMPOSITION FOR ETCHING RESIST - An ink composition for ink jet printing is provided which gives a cured object excellent in adhesion to metallic plates, resistance to etchants, and alkali removability and can be stably ejected with an ink jet apparatus. The ink jet composition for etching resists has a viscosity at 25° C. of 3-50 mPa s and includes monomers comprising: either a polymerizable phosphoric ester compound represented by general formula (I); a polyfunctional monomer having two or more ethylenic double-bond groups per molecule and having no phosphoric ester group, the content of the ethylenic double-bond groups being 4×10 | 02-03-2011 |
20110155693 | SUBSTRATE TREATMENT METHOD, COATING TREATMENT APPARATUS, AND SUBSTRATE TREATMENT SYSTEM - In the coating treatment apparatus, in a first treatment chamber, the front and rear surfaces of the substrate held by a transfer arm are inverted by a turning mechanism, and a coating solution is applied from a coating nozzle to the rear surface of the substrate. The substrate is transferred into a second treatment chamber, in which the coating solution on the rear surface is heated by a heating unit to cure, thereby forming a coating film on the rear surface of the substrate. The formation of the coating film by the coating treatment apparatus is performed before exposure processing, whereby the rear surface of the substrate can be flat for the exposure processing. | 06-30-2011 |
20110226738 | METHODS OF FORMING TRANSPARENT STRUCTURES AND ELECTROCHROMIC DEVICES - Transparent structures, electrochromic devices, and methods for making such structures/devices are provided. A transparent structure may include a transparent substrate having a plurality of micro- or nano-scale structures, at least one substance configured to block near-infrared or infrared radiation and partially cover at least substantial portions of the substrate and the plurality of micro- or nano-scale structures, and at least one photocatalyst configured to at least partially cover an outermost surface of the transparent structure. | 09-22-2011 |
20120006789 | METHOD FOR ADJUSTING RESONANCE FREQUENCIES OF A VIBRATING MICROELECTROMECHANICAL DEVICE - The present invention relates to a method for adjusting the resonant frequencies of a vibrating microelectromechanical (MEMS) device. In one embodiment, the present invention is a method for adjusting the resonant frequencies of a vibrating mass including the steps of patterning a surface of a device layer of the vibrating mass with a mask, etching the vibrating mass to define a structure of the vibrating mass, determining a first set of resonant frequencies of the vibrating mass, determining a mass removal amount of the vibrating mass and a mass removal location of the vibrating mass to obtain a second set of resonant frequencies of the vibrating mass, removing the mask at the mass removal location, and etching the vibrating mass to remove the mass removal amount of the vibrating mass at the mass removal location of the vibrating mass. | 01-12-2012 |
20120074097 | METHOD FOR FABRICATING SUBMICRON PATTERNED SAPPHIRE SUBSTRATE - The present invention provides a method for fabricating a submicron patterned sapphire substrate to be able to apply in GaN light emitting diode. The method includes the following steps: forming an etching stop layer on a sapphire substrate; forming a photoresist layer on the etching stop layer; making a photo mask to contact with the photoresist layer; illuminating the photoresist layer with a beam of light by using the photo mask, and developing the photoresist layer to transfer a submicron pattern from the photo mask to the photoresist layer; etching the etching stop layer by using the photoresist layer with the submicron pattern as a mask to form a first etching stop layer; and etching the sapphire substrate with the first etching stop layer to acquire a submicron patterned sapphire substrate. | 03-29-2012 |
20120152896 | HIGH DENSITY PLASMA ETCHBACK PROCESS FOR ADVANCED METALLIZATION APPLICATIONS - A physical vapor deposition (PVD) system and method includes a chamber including a target and a pedestal supporting a substrate. A target bias device supplies DC power to the target during etching of the substrate. The DC power is greater than or equal to 8 kW. A magnetic field generating device, including electromagnetic coils and/or permanent magnets, creates a magnetic field in a chamber of the PVD system during etching of the substrate. A radio frequency (RF) bias device supplies an RF bias to the pedestal during etching of the substrate. The RF bias is less than or equal to 120V at a predetermined frequency. A magnetic field produced in the target is at least 100 Gauss inside of the target. | 06-21-2012 |
20130075362 | Method Of Forming Open-Network Polishing Pads - The method forms forming an open-network polishing pad useful for polishing magnetic, semiconductor and optical substrates. The method provides a polymer sheet or film of a curable polymer and exposes the polymer sheet or film to an energy source to create an exposure pattern in the polymer sheet or film. The exposure pattern having elongated sections exposed to the energy source. After attaching the polymer sheet or film to an open-network substrate, the method removes polymer adjacent from the exposed polymer sheet or film of the intermediate structure with a solvent. This forms elongated channels through the polymer sheet or film in a texture pattern that corresponds to the exposure pattern with the open-network supporting the polymer. The elongated channels extending through the thickness of the polymer sheet or film to form the open-network polishing pad. | 03-28-2013 |
20130075363 | SPREADING INK OVER A PRESS PLATE USING A HEATER - This invention relates to methods and apparatuses for creating a textured press plate by spreading ink over the press plate using a heater. Some embodiments provide a method that includes: (a) dispensing radiation-curable ink onto a press plate; (b) spreading the ink over the press plate by heating the ink; and (c) irradiating the ink so that the ink is at least partially cured and/or fixed, and/or such that the spreading of the ink is at least partially slowed and/or stopped. In some embodiments, the irradiating the ink occurs after the spreading the ink. In other embodiments, the ink acts to resist a chemical solution, and the method further includes etching a surface portion of the press plate by exposing the portion to a chemical solution, where the surface portion includes the ink, and where the etching the surface portion occurs after the irradiating the ink. | 03-28-2013 |
20130284698 | PATTERNING PROCESS - A patterning process which uses self-assembly, wherein the patterning process includes: forming a silicon-containing film by applying a silicon-containing film composition having an organic substituent group substituted with an acid labile group onto a substrate to be processed, pattern-exposing of the silicon-containing film, forming a polymer film by applying a self-assembling polymer onto the silicon-containing film, self-assembling the polymer film to form a microdomain structure, forming a pattern on the polymer film, transferring the pattern to the silicon-containing film by using the pattern formed on the polymer as a mask, and transferring the pattern to the substrate to be processed by using the pattern transferred to the silicon-containing film as a mask. There can be provided a pattern having a microdomain structure formed by self-assembly with excellent uniformity and regularity, the pattern having been difficult to be obtained by a conventional self-assembly polymer. | 10-31-2013 |
20130284699 | PATTERNING PROCESS - A patterning process which uses self-assembly, including: forming a silicon-containing film by applying a silicon-containing film composition having an organic substituent group substituted with an acid labile group onto a substrate to be processed, forming a photoresist film onto the silicon-containing film, pattern-exposing of the photoresist film, removing the photoresist film, forming a polymer film by applying a self-assembling polymer onto the silicon-containing film, self-assembling the polymer film to form a microdomain structure, forming a pattern of the polymer film having the microdomain formed, transferring the pattern to the silicon-containing film by using the pattern formed on the polymer as a mask, and transferring the pattern to the substrate to be processed by using the pattern transferred to the silicon-containing film as a mask. There can be provided a pattern having a microdomain structure formed by self-assembly with uniformity and regularity. | 10-31-2013 |
20140014621 | ANALYSIS OF PATTERN FEATURES - The embodiments disclose a method for an electron curing reverse-tone process, including depositing an etch-resistant layer onto a patterned imprinted resist layer fabricated onto a hard mask layer deposited onto a substrate, curing the etch-resistant layer using an electron beam dose during etching processes of imprinted pattern features into the hard mask and into the substrate and using analytical processes to quantify reduced pattern feature placement drift errors and to quantify increased pattern feature size uniformity of imprinted pattern features etched. | 01-16-2014 |
20140054265 | METHOD OF FORMING FINE PATTERN, AND DEVELOPER - A method of forming a fine pattern, including: a phase separation step in which a layer containing a block copolymer having a plurality of blocks bonded is formed on a substrate, and then the layer is heated for phase separation of the layer; a decomposition step in which at least a portion of a phase of at least one block of the plurality of blocks constituting the block copolymer is decomposed; a selective removal step in which the layer is immersed in a developing solution to selectively remove a phase containing decomposed blocks to form a nano structure; and an etching step in which the substrate is subjected to etching by using the nano structure as a mask; and a main component of the developing solution is an organic solvent having an SP value of 7.5 to 11.5 (cal/cm | 02-27-2014 |
20140197132 | BLOCK COPOLYMER, METHOD OF FORMING THE SAME, AND METHOD OF FORMING PATTERN - A block copolymer is provided. The block copolymer according to an exemplary embodiment includes a first block represented by Chemical Formula 1 and a second block represented by Chemical Formula 2: | 07-17-2014 |
20140263173 | METHODS FOR IMPROVING ETCHING RESISTANCE FOR AN AMORPHOUS CARBON FILM - Methods for using an electron beam treatment performed on an amorphous carbon layer to form a treated amorphous carbon layer with high etching resistance are provided. In one embodiment, a method of treating an amorphous carbon film includes providing a substrate having a material layer disposed, forming an amorphous carbon layer on the material layer, and performing an electron beam treatment process on the amorphous carbon layer. | 09-18-2014 |
20140263174 | System and Method for Scoring and Applying a Pigment Solution to a Substrate - A method for scoring and, optionally, for applying a pigment solution to a substrate is provided herein. The method includes the steps of: providing a substrate; applying a curable solution to the substrate with a digital ink jet printer; curing the applied curable solution to form a cured region; and applying a fluid for eroding the substrate to at least a portion of the substrate including the cured region. The fluid for eroding the substrate effectively removes portions of the substrate, which are not covered by the cured region, to form an eroded region of the substrate. In certain embodiments, a plurality of pigment solutions are then applied to at least a portion of the eroded region of the substrate with the digital ink-jet printer to form embellishments, decorative features, or designs in the eroded regions of the substrate. | 09-18-2014 |
20140312004 | ETCHING METHOD - Provided are an etching method capable of increasing an etching selectivity between a subject material and a resist, a sapphire substrate processed using the etching method, and a light-emitting device including the sapphire substrate. An etching method using a plasma etching apparatus includes: a resist film forming step of forming a resist film on a subject material; a pattern forming step of forming a predetermined pattern on the resist film; a resist degenerating step of exposing the resist film on which the pattern is formed to plasma under a predetermined degeneration condition to degenerate the resist film and increase an etching selectivity; and a subject material etching step of exposing the subject material to plasma under an etching condition different from the degeneration condition to etch the subject material using the resist film having an increased etching selectivity as a mask. | 10-23-2014 |
20150041431 | Methods of laser processing photoresist in a gaseous environment - Methods of laser processing photoresist in a gaseous environment to improve at least one of etch resistance and line-edge roughness are disclosed. The methods include sequentially introducing first and second molecular gases to the photoresist surface and performing respective first and second laser scanning of the surface for each molecular gas. The first molecular gas can be trimethyl aluminum, titanium tetrachloride or diethyl zinc, and the second molecular gas comprises water vapor. Short dwell times prevent the photoresist from flowing while serving to speed up the photoresist enhancement process. | 02-12-2015 |
20150048051 | RESIST PATTERN-FORMING METHOD, SUBSTRATE-PROCESSING METHOD, AND PHOTORESIST COMPOSITION - A resist pattern-forming method is provided, including: providing a resist film using a photoresist composition; exposing the resist film; and developing the resist film exposed, the photoresist composition containing a polymer having a weight average molecular weight of no less than 1,000 and no greater than 7,500 and having a structural unit that includes an acid-labile group that is dissociated by an action of an acid, a radiation-sensitive acid generator and a solvent composition, and the photoresist composition having a content of solids of no less than 20% by mass and no greater than 60% by mass. The photoresist composition preferably has a viscosity of no less than 50 mPa·s and no greater than 150 mPa·s at 25° C. | 02-19-2015 |
20160090435 | BLOCK COPOLYMER, METHOD OF FORMING THE SAME, AND METHOD OF FORMING PATTERN - A block copolymer is provided. The block copolymer according to an exemplary embodiment includes a first block represented by Chemical Formula 1 and a second block represented by Chemical Formula 2: | 03-31-2016 |
20160139511 | METHOD FOR MAKING NANO-PILLAR ARRAY ON SUBSTRATE - The disclosure relates to a method of making a nano-pillar array on a substrate. A carbon nanotube composite structure is provided. The carbon nanotube composite structure defines a number of openings. The carbon nanotube composite structure is placed on the substrate. The substrate is dry etched to form a patterned surface by using the first surface using the carbon nanotube composite structure as a mask. The patterned surface includes a number of strip-shaped bulges crossed with each other. The carbon nanotube composite structure is removed. A photoresist layer is applied on the patterned surface. The photoresist layer is removed and some residual photoresist remains at intersections of the number of strip-shaped bulges. The substrate is further dry etched by using the residual photoresist as a mask. | 05-19-2016 |