Class / Patent application number | Description | Number of patent applications / Date published |
216040000 | FORMING PATTERN USING LIFT OFF TECHNIQUE | 15 |
20090194502 | AMORPHOUS NITRIDE RELEASE LAYERS FOR IMPRINT LITHOGRAPHY, AND METHOD OF USE - A morphous inorganic nitrides are used as release layers on templates for nanoimprint lithography. Such a layer facilitates the release of a template from a cured, hardened composition into which the template has transferred a pattern, by reducing the adhesion energy between the release layer and the cured, hardened composition. The release layer may include one or more metallic or semiconductor elements such as Al, Mn, B, Co, Ti, Ta, W and Ge. | 08-06-2009 |
20100102029 | Imprint Lithography Template - Systems, methods, and processes for forming imprint lithography templates from a multi-layer substrate are described. The multi-layer substrate may include a block copolymer layer positioned on a substrate layer. The block copolymer layer may include two or more domains. At least one domain may have a different composition sensitivity than another domain such that the domains have different reactions to a specific process. Reaction of the domains to the specific process may provide a pattern in the block copolymer layer. The pattern may be transferred into the substrate layer to form the imprint lithography template. | 04-29-2010 |
20100116784 | MESA ETCH METHOD AND COMPOSITION FOR EPITAXIAL LIFT OFF - Embodiments of the invention generally relate to compositions of mesa etch solutions and methods for mesa etching materials on a wafer during an epitaxial lift off (ELO) process. The wafer usually contains an etch stop layer disposed thereon and a laminated epitaxial material disposed on the etch stop layer. In one embodiment, an etch process includes exposing the wafer to a non-selective etch solution and subsequently exposing the wafer to a selective etch solution while peeling the laminated epitaxial material from the wafer. The selective etch solution may contain succinic acid, an ammonium hydroxide compound, and an oxidizing agent, such as hydrogen peroxide. The selective etch solution may have a GaAs/AlAs selectivity of about 600, about 1,000, about 1,400, or greater. The non-selective etch solution may be an aqueous solution containing sulfuric acid and hydrogen peroxide. | 05-13-2010 |
20110049096 | Functional Nanoparticles - Functional nanoparticles may be formed using at least one nano-lithography step. In one embodiment, sacrificial material may be patterned on a multi-layer substrate using an imprint lithography system. The pattern may be further etched into the multi-layer substrate. Functional material may then be deposited on multi-layer substrate and solidified. At least a portion of the functional material may then be removed to provide a crown surface exposing pillars. Pillars may be removed from multi-layer substrate forming functional nanoparticles. | 03-03-2011 |
20110266255 | IMPRINT LITHOGRAPHY - A method of making an imprint template includes providing a transfer layer on a substrate and providing a layer of imprintable medium on the transfer layer, using a master imprint template to imprint a pattern into the imprintable medium, polymerizing the imprintable medium by exposing it to actinic radiation, then etching the resulting polymer layer, the transfer layer and the substrate such that the imprinted pattern is transferred to the substrate, the substrate thereby becoming an imprint template bearing a pattern which is the inverse of a pattern provided on the master imprint template. | 11-03-2011 |
20120091096 | SYSTEM, METHOD AND APPARATUS FOR PATTERN CLEAN-UP DURING FABRICATION OF PATTERNED MEDIA USING FORCED ASSEMBLY OF MOLECULES - A pattern clean-up for fabrication of patterned media using a forced assembly of molecules is disclosed. E-beam lithography is initially used to write the initial patterned bit media structures, which have size and positioning errors. Nano-sized protein molecules are then forced to assemble of on top of the bits. The protein molecules have a very uniform size distribution and assemble into a lattice structure above the e-beam patterned areas. The protein molecules reduce the size and position errors in e-beam patterned structures. This process cleans the signal from the e-beam lithography and lowers the noise in the magnetic reading and writing. This process may be used to fabricate patterned bit media directly on hard disk, or to create a nano-imprint master for mass production of patterned bit media disks. | 04-19-2012 |
20130020281 | NANOIMPRINTING METHOD, METHOD FOR PRODUCING A DROPLET ARRANGEMENT PATTERN, AND METHOD FOR FABRICATING SUBSTRATES - The disclosed nanoimprinting method suppresses fluctuations in thickness of residual film and defects due to residual gas in a resist film, onto which a pattern of protrusions and recesses is transferred, in a nanoimprinting method that employs the ink jet method to coat a substrate with droplets of resist material. Droplets are coated onto a substrate such that the spaces between the droplets along an A direction which is substantially parallel to the direction of the lines of a linear pattern of protrusions and recesses are longer than the spaces between the droplets in a B direction which is substantially perpendicular to the A direction, in a nanoimprinting method that coats a substrate with the droplets of a resist material using the ink jet method. | 01-24-2013 |
20130082029 | STAMPER, IMPRINT DEVICE, PRODUCT PROCESSED BY IMPRINT DEVICE, DEVICE FOR MANUFACTURING PRODUCT PROCESSED BY IMPRINT DEVICE, AND METHOD FOR MANUFACTURING PRODUCT PROCESSED BY IMPRINT DEVICE - The object of the present invention is to provide a stamper or an imprint device which can reduce a variation of a base film thickness, a product processed and having a precise fine pattern, and a device for manufacturing a product processed or a method for manufacturing a product processed which can form a precise fine pattern. According to the present invention, in a stamper, an imprint device performing an imprint using the stamper, a device for manufacturing a product processed by the imprint device, a method for manufacturing a product processed by the imprint, and a product processed and manufactured, the stamper has a dummy pattern which is unnecessary for fulfilling a function of the product processed which is formed of a substrate for the product. | 04-04-2013 |
20130087528 | NANOIMPRINT RESIST, NANOIMPRINT MOLD AND NANOIMPRINT LITHOGRAPHY - A nanoimprint lithography method includes the following steps. First, a first sacrifice layer, a second sacrifice layer and a nanoimprint resist are formed on a substrate. The nanoimprint resist includes a hyperbranched polyurethane oligomer, a perfluoropolyether; a methylmethacrylate, and a diluent solvent. Second, a master stamp with a first nanopattern formed by a number of projecting portions and gaps is provided, and the first nanopattern is pressed into the nanoimprint resist to form a second nanopattern in the nanoimprint resist. Third, the second nanopattern is transferred to the substrate. | 04-11-2013 |
20140021166 | PATTERN FORMING METHOD - According to one embodiment, a pattern forming method includes forming a physical guide that includes a first predetermined pattern in a first region on a lower layer film, and includes a second predetermined pattern and a dummy pattern in a second region on the lower layer film, forming a block polymer inside the physical guide, making the block polymer microphase-separated to form a pattern having a first polymer section and a second polymer section, removing the second polymer section to form a hole pattern, and processing the lower layer film after removal of the second polymer section, with the physical guide and the first polymer section used as a mask. Shapes of the hole patterns in the first and the second predetermined patterns are transferred to the lower layer film. A shape of the hole pattern in the dummy pattern is not transferred to the lower layer film. | 01-23-2014 |
20140021167 | Large Area Patterning of Nano-Sized Shapes - Methods for creating nano-shaped patterns are described. This approach may be used to directly pattern substrates and/or create imprint lithography molds that may be subsequently used to directly replicate nano-shaped patterns into other substrates in a high throughput process. | 01-23-2014 |
20140034605 | PATTERNING PROCESS FOR OXIDE FILM - The present disclosure provides a patterning process for an oxide film, including: covering a barrier layer composition on a substrate to form a patterned barrier layer, wherein the barrier layer composition includes an inorganic component and an organic binder with a weight ratio of 50-98:2-50; forming an oxide film on the patterned barrier layer and the substrate, wherein a thickness ratio (D1/D2) of the barrier layer (D1) to the oxide film (D2) is about 5-2000; and lifting off the barrier layer and the oxide film thereon, while leaving portions of the oxide film on the substrate. | 02-06-2014 |
20140263171 | Wet-Etchable, Sacrificial Liftoff Layer Compatible with High Temperature Processing - A method for forming a wet-etchable, sacrificial lift-off layer or layers compatible with high temperature processing, a sacrificial layer, defined as consisting of a single film of one material or multiple films of multiple materials, that can tolerate high temperatures, is deposited on a substrate, called the original substrate, by sputtering or another suitable technique (e.g. evaporation, pulsed laser deposition, wet chemistry, etc.). Intermediate steps result in a lift-off layer attached to the lift-off substrate, that allow for separating the product from the original substrate. | 09-18-2014 |
20140305904 | LARGE-AREA NANOPATTERNING APPARATUS AND METHOD - The present invention discloses a nanoimprint apparatus and method useful in the cost-effective mass production of nanostructures over large areas on various substrates or surfaces, especially suitable for non-flat substrates or curved surfaces. The nanoimprint apparatus is composed of a wafer stage, a vacuum chuck, a substrate, a UV-curable nanoimprint resist and the like. The method implementing large-area nanopatterning based on the apparatus includes the following steps: (1) pretreatment, (2) imprinting, (3) curing, (4) demolding, (5) post treatment and (6) transferring of imprinted patterns. By utilizing the apparatus and the approach, large-area, and/or high-aspect-ratio micro/nanostructures can be mass produced, especially on a non-flat substrate or a curved surface or a fragile substrate at low cost and high throughput. | 10-16-2014 |
20140374379 | PATTERN FORMING METHOD - According to one embodiment, a pattern forming method includes, forming a first mask on a film to be processed, forming a guide that has a pattern including first openings and second openings, forming a second mask which covers the first openings and does not cover the second openings, etching the first mask using the second mask and the guide as a mask, removing the second mask, applying a self-assembling material into the first openings and the second openings, heating the self-assembling material to form a self-assembled pattern including a first polymer portion and a second polymer portion, etching the first polymer portion, etching the first mask using the second polymer portion and the guide as a mask, and processing the film to be processed using the first mask as a mask. | 12-25-2014 |