Class / Patent application number | Description | Number of patent applications / Date published |
216038000 | PLANARIZING A NONPLANAR SURFACE | 36 |
20080217291 | SUBSTRATE MOUNTING STAGE AND SURFACE TREATMENT METHOD THEREFOR - A substrate mounting stage that prevents poor attraction of substrates so as to improve the operating rate of a substrate processing apparatus. The substrate mounting stage is disposed in the substrate processing apparatus and has a substrate mounting surface on which a substrate is mounted. The arithmetic average roughness (Ra) of the substrate mounting surface is not less than a first predetermined value, and the initial wear height (Rpk) of the substrate mounting surface is not more than a second predetermined value. | 09-11-2008 |
20080264901 | Chemical Mechanical Polishing Process for Planarizing Copper Surface - Disclosed is a chemical mechanical polishing planarization method for copper surface, including the following steps: depositing a dielectric layer on the copper surface, and polishing the copper surface having the dielectric layer thereon. The method for planarizing a copper surface by chemical mechanical polishing process according to the present invention can achieve the planarization of the surfaces of both the copper and the dielectric layer, so as to avoid the occurrence of the dishing phenomenon. | 10-30-2008 |
20080277378 | Method for Chemical-Mechanical Planarization of Copper - Method for polishing copper by chemical-mechanical planarization. The method of the present invention includes dissolving MoO | 11-13-2008 |
20080314870 | Substrate Processing Method, Substrate Processing Apparatus, and Control Program - This invention provides a substrate processing method including a step of covering in advance the surface of a substrate W with water ( | 12-25-2008 |
20090039056 | PLANARIZING METHOD - Provided is a planarizing method in which a planarization with high flatness can be performed, without being restricted by the distribution of film thickness in the applied resist film. The planarizing method comprises the steps of: forming a resist film on a film to be planarized formed on a substrate; exposing the resist film with the amounts of exposure light in respective sections into which an area in which the film to be planarized is formed is divided, the amounts of exposure light being determined so as to realize film thicknesses to be left for planarization of the resist film in the respective sections; developing the exposed resist film, to form a resist film pattern with a controlled distribution of film thickness; and etching the resist film pattern and the film to be planarized, until eliminating the thickness amounts to be eliminated of the film to be planarized. | 02-12-2009 |
20090045164 | "UNIVERSAL" BARRIER CMP SLURRY FOR USE WITH LOW DIELECTRIC CONSTANT INTERLAYER DIELECTRICS - During processing of a semiconductor wafer bearing a structure including a low-k dielectric layer, a cap layer and the metal-diffusion barrier layer, a chemical mechanical polishing method applied to remove the metal-diffusion barrier material involves two phases. In the second phase of the barrier-CMP method, when the polishing interface is close to the low-k dielectric material, the polishing conditions are changed so as to be highly selective, producing a negligible removal rate of the low-k dielectric material. The polishing conditions can be changed in a number of ways including: changing parameters of the composition of the barrier slurry composition, and mixing an additive into the barrier slurry. | 02-19-2009 |
20090101625 | Silicon carbide particles, methods of fabrication, and methods using same - Improved silicon carbide particles, improved silicon carbide abrasive particles, and abrasive slurry compositions for use chemical mechanical planarization (CMP) processes. The particles can comprise nano-sized silicon carbide particles, particularly silicon carbide particles having a surface chemistry similar to silica. | 04-23-2009 |
20100126961 | Polysilicon Planarization Solution for Planarizing Low Temperature Poly-Silicon Thin Film Panels - A highly aqueous, strongly basic planarizing solution and a process for its use to reducing or essentially eliminating protrusions or projections extending generally upwardly from a generally planar surface of polysilicon film produced by Low Temperature Poly Si (LTPS) annealing a film of amorphous silicon deposited on a substrate; the process including contacting the surface of the generally planar polysilicon film with the highly aqueous, strongly basic solution for a time sufficient to selectively etch the protrusions or projections from the surface of the generally planar polysilicon film without any significant etching of the generally planar polysilicon film, said highly aqueous, strongly basic solution being a solution having a pH of 12 or higher and comprising water, at least one strong base, and at least one etch rate control agent. | 05-27-2010 |
20100140218 | Positive Tone Bi-Layer Method - Methods of patterning a substrate including creating a multi-layered structure by forming, on the substrate, a patterned layer having protrusions and recessions are described. A polymerizable material composition is dispense on the patterned layer defining a conformal layer, with the multi-layered structure having a crown surface facing away from the substrate. Portions of the multi-layered structure are removed to expose regions of the substrate in superimposition with the protrusions, while forming a hard mask in areas of the crown surface in superimposition with the recessions. | 06-10-2010 |
20100176084 | SQUEEZE FOR SCREEN PRINTER - Disclosed is a squeeze for a screen printer. The present invention provides a squeeze for a screen printer, which coats a printed circuit board with an adhesive paste while moving parallel over a metal mask on the printed circuit board, the printed circuit board being open through an opening of the metal mask, the squeeze including a solvent storage unit for storing solvents; and solvent discharging holes for discharging the solvents, stored in the solvent storage unit, to an adhesive paste. Accordingly, the squeeze for a screen printer of the present invention may be useful to prevent a dog ear phenomenon, namely that an adhesive paste layer is asymmetrically formed in an indented manner, by controlling a viscosity of an adhesive paste by discharging a solvent onto an adhesive paste layer that comes in contact with the squeeze when the adhesive paste layer is formed in the printed circuit board. | 07-15-2010 |
20110079579 | PLANARIZATION OVER TOPOGRAPHY WITH MOLECULAR GLASS MATERIALS - Molecular glass based planarizing compositions for lithographic processing are disclosed. The processes generally include casting the planarizing composition onto a surface comprised of lithographic features, the planarizing composition comprising at least one molecular glass and at least one solvent; and heating the planarizing composition to a temperature greater than a glass transition temperature of the at least one molecular glass. Exemplary molecular glasses include polyhedral oligomeric silsesquioxane derivatives, calixarenes, cyclodextrin derivatives, and other non-polymeric large molecules. | 04-07-2011 |
20120187084 | SUBSTRATE PROCESSING METHOD - A processing method of a substrate which includes: a first bonding step which bonds a ring-shaped first support member to a first surface of the substrate along the outer periphery of the substrate; a first processing step which processes the substrate; and a first separating step which separates the first support member from the substrate by separation at the bonded position. | 07-26-2012 |
20130032571 | METHOD FOR MANUFACTURING AN ALUMINOSILICATE GLASS SUBSTRATE FOR HARD DISKS - A method for manufacturing an aluminosilicate glass substrate for a hard disk of the present invention includes polishing an aluminosilicate glass substrate to be polished with a polishing composition that includes silica particles, a polymer having a sulfonic acid group, and water, wherein an adsorption constant of the polymer having the sulfonic acid group on aluminosilicate glass is 1.5 to 5.0 L/g. The polymer having the sulfonic acid group is preferably a polymer having an aromatic ring. The weight average molecular weight of the polymer having the sulfonic acid group is 3000 to 100000. | 02-07-2013 |
20130119013 | METHOD FOR CHEMICAL PLANARIZATION AND CHEMICAL PLANARIZATION APPARATUS - According to one embodiment, a method is disclosed for chemical planarization. The method can include forming a surface layer on a to-be-processed film having irregularity. The surface layer binds to or adsorbs onto the to-be-processed film along the irregularity to suppress dissolution of the to-be-processed film. The method can include planarizing the to-be-processed film in a processing solution dissolving the to-be-processed film, by rotating the to-be-processed film and a processing body while the to-be-processed film contacting the processing body via the surface layer, removing the surface layer on convex portions of the irregularity while leaving the surface layer on concave portions of the irregularity and making dissolution degree of the convex portions larger than dissolution degree of the concave portions. | 05-16-2013 |
20130140272 | LITHOGRAPHY USING SELF-ASSEMBLED POLYMERS - A method of lithography on a substrate uses a self-assembled polymer (SAP) layer deposited on the substrate, with first and second domains arranged in a pattern across the layer. A planarization layer is formed over the SAP and a development etch applied to substantially remove a portion of the planarization layer over the second domain leaving a cap of the planarization layer substantially covering the first domain. The uncapped second domain is then removed from the surface by a breakthrough etch leaving the capped first domain as a pattern feature on the surface. A transfer etch may then be used to transfer the pattern feature to the substrate using the capped first domain. The capping allows the second domain to be removed, e.g., without excessive loss of lateral feature width for the remaining first domain, even when the difference in etch resistance between the first and second domains is small. | 06-06-2013 |
20130341303 | JIG, MANUFACTURING METHOD THEREOF, AND FLIP CHIP BONDING METHOD FOR CHIPS OF ULTRASOUND PROBE USING JIG - A jig includes a wafer including an accommodation groove configured to accommodate a capacitive micromachined ultrasonic transducer (cMUT) when flip chip bonding is performed, and a separation groove formed in a bottom surface of the accommodation groove, the separation groove having a bottom surface that is spaced apart from thin films of the cMUT that face the bottom surface of the separation groove when the cMUT is seated on portions of the bottom surface of the accommodation groove. | 12-26-2013 |
20140001153 | POLISHING SLURRY AND POLISHING METHOD THEREOF | 01-02-2014 |
20140158663 | SURFACE TREATMENT METHOD FOR FLEXIBLE SUBSTRATE - A surface treatment method for a flexible substrate is provided. A flexible insulation substrate is provided. A surface of the flexible insulation substrate has at least one defect. A plasma etching is performed on the flexible insulation substrate to smooth a profile of the defect. | 06-12-2014 |
20140251950 | POLISHING COMPOSITION - A polishing composition of the present invention is used for polishing an object containing a phase-change alloy and is characterized by containing ammonium ions (NH | 09-11-2014 |
20140263170 | METHODS OF POLISHING SAPPHIRE SURFACES - Described herein are compositions, kits and methods for polishing sapphire surfaces using compositions having colloidal aluminosilicate particles in an aqueous acidic solution. In some aspects, the methods for polishing a sapphire surface may include abrading a sapphire surface with a rotating polishing pad and a polishing composition. The polishing composition may include an amount of a colloidal aluminosilicate and may have a pH of about 2.0 to about 7.0. | 09-18-2014 |
20140299574 | METHODS FOR FABRICATING MICRO-DEVICES - The present invention provides methods utilizing current nano-technological processes for fabricating a range of micro-devices with significantly expanded capabilities, unique functionalities at microscopic levels, enhanced degree of flexibilities, reduced costs and improved performance in the fields of bioscience and medicine. Such fabricated micro-devices have significant improvements in many areas over the existing, conventional methods, which include, but are not limited to reduced overall costs, early disease detection, targeted drug delivery, targeted disease treatment and reduced degree of invasiveness in treatment. Compared with existing, conventional approaches, the said inventive approach disclosed in this patent application is much more microscopic, sensitive, accurate, precise, flexible and effective. | 10-09-2014 |
20140346140 | CMP COMPOSITIONS SELECTIVE FOR OXIDE AND NITRIDE WITH HIGH REMOVAL RATE AND LOW DEFECTIVITY - The invention provides a chemical-mechanical polishing composition containing a ceria abrasive, an ionic polymer of formula I: | 11-27-2014 |
20140374378 | Chemical Mechanical Polishing (CMP) Composition for Shallow Trench Isolation (STI) Applications and Methods of Making Thereof - Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at lease a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing. | 12-25-2014 |
20150021292 | POLISHING AGENT FOR SYNTHETIC QUARTZ GLASS SUBSTRATE - Disclosed is a polishing agent for synthetic quartz glass substrates, which is characterized by containing a colloidal solution of a colloidal silica or the like having a colloid concentration of 20-50% by mass, and a polycarboxylic acid polymer, an acidic amino acid, a phenol or a glycosaminoglycan. | 01-22-2015 |
20150027981 | CMP METHOD FOR FORMING SMOOTH DIAMOND SURFACES - A method of chemical mechanical polishing (CMP) a diamond containing surface includes providing a slurry including a plurality of particles, at least one oxidizer, and at least one acid, wherein the slurry has a pH≦3 or pH greater than 11. At least an outer surface of the plurality of particles is softer than the diamond surface or the particles are diamond particles averaging less than (<) 2 μm in size. The diamond surface is pressed with respect to a polishing pad providing a Shore D Hardness less than 99 having the slurry in between while rotating the polishing pad relative to the diamond surface to form a smooth diamond surface having a root mean square (rms) surface roughness less than 15 nm. | 01-29-2015 |
20150053642 | CHEMICAL MECHANICAL POLISHING COMPOSITION FOR POLISHING A SAPPHIRE SURFACE AND METHODS OF USING SAME - A method of polishing a sapphire substrate is provided, comprising: providing a substrate having an exposed sapphire surface; providing a chemical mechanical polishing slurry, wherein the chemical mechanical polishing slurry comprises, as initial components: colloidal silica abrasive, wherein the colloidal silica abrasive has a negative surface charge; and, wherein the colloidal silica abrasive exhibits a multimodal particle size distribution with a first particle size maximum between 2 and 25 nm; and, a second particle size maximum between 75 and 200 nm; optionally, a biocide; optionally, a nonionic defoaming agent; and, optionally, a pH adjuster. A chemical mechanical polishing composition for polishing an exposed sapphire surface is also provided. | 02-26-2015 |
20150060400 | POLISHING COMPOSITION - The present invention provides a polishing composition that can suppress generation of bumps due to etching on a surface of an object to be polished having a germanium material-containing part during the polishing of the object. | 03-05-2015 |
20150060401 | METHOD OF EDGE COATING A BATCH OF GLASS ARTICLES - A method of edge coating a batch of glass articles includes printing masks on surfaces of a glass sheet, where at least one of the masks is a patterned mask defining a network of separation paths. The glass sheet with the printed masks is divided into multiple glass articles along the separation paths. For at least a batch of the glass articles, the edges of the glass articles in the batch are finished to reduce roughness at the edges. Each finished edge is then etched with an etching medium to reduce and/or blunt flaws in the finished edge. A curable coating is simultaneously applied to the etched edges. The curable coatings are pre-cured. Then, the printed masks are removed from the glass articles with the curable coatings. After removing the printed masks, the pre-cured curable coatings are post-cured. | 03-05-2015 |
20150083689 | CHEMICAL-MECHANICAL PLANARIZATION OF POLYMER FILMS - The invention provides a chemical-mechanical polishing composition and a method of chemically-mechanically polishing a substrate with the chemical-mechanical polishing composition. The polishing composition comprises (a) abrasive particles that comprise ceria, zirconia, silica, alumina, or a combination thereof, (b) a metal ion that is a Lewis Acid, (c) a ligand that is an aromatic carboxylic acid, an aromatic sulfonic acid, an aromatic acid amide, an amino acid, or a hydroxy-substituted N-heterocycle, and (d) an aqueous carrier, wherein the pH of the chemical-mechanical polishing composition is in the range of about 1 to about 4. | 03-26-2015 |
20150129543 | METHOD FOR ETCHING METAL OR METAL OXIDE BY OZONE WATER, METHOD FOR SMOOTHING SURFACE OF METAL OR METAL OXIDE BY OZONE WATER, AND PATTERNING METHOD USING OZONE WATER - Provided are a method for etching a metal or metal oxide without using a reagent, etc., that affects the environment, a method for smoothing a surface of a metal or metal oxide on an atomic level, and a method for patterning on an atomic level. Etching of a metal or metal oxide, or smoothing of a surface of a metal or metal oxide is possible using ozone water in which only ozone is dissolved. Patterning can also be performed by providing a metal that does not dissolve in the ozone water as a resist on a metal or metal oxide that can be etched by ozone water in which only ozone is dissolved, and etching using the ozone water. | 05-14-2015 |
20150298287 | POLISHING PAD WITH OFFSET CONCENTRIC GROOVING PATTERN AND METHOD FOR POLISHING A SUBSTRATE THEREWITH - The invention provides a polishing pad and a method of using the polishing pad for chemically-mechanically polishing a substrate. The polishing pad comprises a plurality of grooves composed of at least a first plurality of concentric grooves having a first center of concentricity, and a second plurality of concentric grooves having a second center of concentricity. The first center of concentricity is not coincident with the second center of concentricity, the axis of rotation of the polishing pad is not coincident with at least one of the first center of concentricity and the second center of concentricity, the plurality of grooves does not consist of a continuous spiral groove, and the polishing surface does not comprise a mosaic groove pattern. | 10-22-2015 |
20160077439 | GRAPHO-EPITAXY METHOD FOR MAKING PATTERNS ON THE SURFACE OF A SUBSTRATE - A method for making patterns on a substrate, includes forming an assembly guide on first and second areas of the substrate, the assembly guide having, compared to a reference surface, openings with an opening ratio in the first area greater than that of the second area; depositing a block copolymer layer on the substrate to entirely fill the assembly guide and form an over-thickness on the reference surface; assembling the block copolymer, resulting in an organised portion of the block copolymer layer inside the openings; thinning uniformly the block copolymer layer, until a thickness corresponding to the organised portion of the block copolymer layer is reached; eliminating one of the phases of the assembled block copolymer, resulting in a plurality of initial patterns extending into the layer of block copolymer; and transferring the initial patterns of the block copolymer layer into the substrate to form the final patterns. | 03-17-2016 |
20160102227 | NICKEL PHOSPHOROUS CMP COMPOSITIONS AND METHODS - A chemical mechanical polishing (CMP) composition for planarizing a nickel phosphorus (NiP) substrate comprises a suspension of colloidal silica particles and fused silica particles in an acidic aqueous carrier containing hydrogen peroxide, in which the concentration of the fused silica particles is less than or equal to the concentration of the colloidal silica particles. In some embodiments, the CMP composition includes a primary complexing agent, a secondary complexing agent, and a metal ion such as ferric ion, which is capable of reversible oxidation and reduction in the presence of hydrogen peroxide and NiP. | 04-14-2016 |
20160121451 | Method for Adaptive Feedback Controlled Polishing - An adaptive feedback control method is provided for a chemical mechanical polish process to minimize a dielectric layer clearing time difference between two annular regions on a substrate. An optical system with an optical window passes below the polishing pad and detects reflected light interference signals from at least two annular regions. A pre-clearing time difference is determined and is used to calculate an adjustment to one or both of a CMP head membrane pressure and a retaining ring pressure. The pressure adjustment is applied before the end of the polish cycle to avoid the need for a second polish cycle and to reduce a dishing difference and a resistance difference in a metal layer in the at least two annular regions. In some embodiments, a second pressure adjustment is performed before the end of the cycle and different CMP head membrane pressure adjustments are made in different pressure zones. | 05-05-2016 |
20160375543 | CHEMICAL MECHANICAL POLISHING PAD AND METHOD OF MAKING SAME - A chemical mechanical polishing pad is provided, comprising: a chemical mechanical polishing layer having a polishing surface; wherein the chemical mechanical polishing layer is formed by combining (a) a poly side (P) liquid component, comprising: an amine-carbon dioxide adduct; and, at least one of a polyol, a polyamine and a alcohol amine; and (b) an iso side (I) liquid component, comprising: polyfunctional isocyanate; wherein the chemical mechanical polishing layer has a porosity of ≧10 vol %; wherein the chemical mechanical polishing layer has a Shore D hardness of <40; and, wherein the polishing surface is adapted for polishing a substrate. Methods of making and using the same are also provided. | 12-29-2016 |
20160375544 | COMPOSITE POLISHING LAYER CHEMICAL MECHANICAL POLISHING PAD - A chemical mechanical polishing pad is provided containing: a polishing layer having a polishing surface; wherein the polishing layer comprises a first continuous non-fugitive polymeric phase and a second continuous non-fugitive polymeric phase; wherein the first continuous non-fugitive polymeric phase has a plurality of interconnected periodic recesses; wherein the plurality of interconnected periodic recesses are occupied with the second continuous non-fugitive polymeric phase; wherein the first continuous non-fugitive polymeric phase has an open cell porosity of ≦6 vol %; wherein the second continuous non-fugitive polymeric phase contains an open cell porosity of ≧10 vol %; and, wherein the polishing surface is adapted for polishing a substrate. | 12-29-2016 |