| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 216038000 | PLANARIZING A NONPLANAR SURFACE | 14 |
| 20130032571 | METHOD FOR MANUFACTURING AN ALUMINOSILICATE GLASS SUBSTRATE FOR HARD DISKS - A method for manufacturing an aluminosilicate glass substrate for a hard disk of the present invention includes polishing an aluminosilicate glass substrate to be polished with a polishing composition that includes silica particles, a polymer having a sulfonic acid group, and water, wherein an adsorption constant of the polymer having the sulfonic acid group on aluminosilicate glass is 1.5 to 5.0 L/g. The polymer having the sulfonic acid group is preferably a polymer having an aromatic ring. The weight average molecular weight of the polymer having the sulfonic acid group is 3000 to 100000. | 02-07-2013 |
| 20130119013 | METHOD FOR CHEMICAL PLANARIZATION AND CHEMICAL PLANARIZATION APPARATUS - According to one embodiment, a method is disclosed for chemical planarization. The method can include forming a surface layer on a to-be-processed film having irregularity. The surface layer binds to or adsorbs onto the to-be-processed film along the irregularity to suppress dissolution of the to-be-processed film. The method can include planarizing the to-be-processed film in a processing solution dissolving the to-be-processed film, by rotating the to-be-processed film and a processing body while the to-be-processed film contacting the processing body via the surface layer, removing the surface layer on convex portions of the irregularity while leaving the surface layer on concave portions of the irregularity and making dissolution degree of the convex portions larger than dissolution degree of the concave portions. | 05-16-2013 |
| 20080264901 | Chemical Mechanical Polishing Process for Planarizing Copper Surface - Disclosed is a chemical mechanical polishing planarization method for copper surface, including the following steps: depositing a dielectric layer on the copper surface, and polishing the copper surface having the dielectric layer thereon. The method for planarizing a copper surface by chemical mechanical polishing process according to the present invention can achieve the planarization of the surfaces of both the copper and the dielectric layer, so as to avoid the occurrence of the dishing phenomenon. | 10-30-2008 |
| 20100140218 | Positive Tone Bi-Layer Method - Methods of patterning a substrate including creating a multi-layered structure by forming, on the substrate, a patterned layer having protrusions and recessions are described. A polymerizable material composition is dispense on the patterned layer defining a conformal layer, with the multi-layered structure having a crown surface facing away from the substrate. Portions of the multi-layered structure are removed to expose regions of the substrate in superimposition with the protrusions, while forming a hard mask in areas of the crown surface in superimposition with the recessions. | 06-10-2010 |
| 20090101625 | Silicon carbide particles, methods of fabrication, and methods using same - Improved silicon carbide particles, improved silicon carbide abrasive particles, and abrasive slurry compositions for use chemical mechanical planarization (CMP) processes. The particles can comprise nano-sized silicon carbide particles, particularly silicon carbide particles having a surface chemistry similar to silica. | 04-23-2009 |
| 20100176084 | SQUEEZE FOR SCREEN PRINTER - Disclosed is a squeeze for a screen printer. The present invention provides a squeeze for a screen printer, which coats a printed circuit board with an adhesive paste while moving parallel over a metal mask on the printed circuit board, the printed circuit board being open through an opening of the metal mask, the squeeze including a solvent storage unit for storing solvents; and solvent discharging holes for discharging the solvents, stored in the solvent storage unit, to an adhesive paste. Accordingly, the squeeze for a screen printer of the present invention may be useful to prevent a dog ear phenomenon, namely that an adhesive paste layer is asymmetrically formed in an indented manner, by controlling a viscosity of an adhesive paste by discharging a solvent onto an adhesive paste layer that comes in contact with the squeeze when the adhesive paste layer is formed in the printed circuit board. | 07-15-2010 |
| 20090039056 | PLANARIZING METHOD - Provided is a planarizing method in which a planarization with high flatness can be performed, without being restricted by the distribution of film thickness in the applied resist film. The planarizing method comprises the steps of: forming a resist film on a film to be planarized formed on a substrate; exposing the resist film with the amounts of exposure light in respective sections into which an area in which the film to be planarized is formed is divided, the amounts of exposure light being determined so as to realize film thicknesses to be left for planarization of the resist film in the respective sections; developing the exposed resist film, to form a resist film pattern with a controlled distribution of film thickness; and etching the resist film pattern and the film to be planarized, until eliminating the thickness amounts to be eliminated of the film to be planarized. | 02-12-2009 |
| 20080314870 | Substrate Processing Method, Substrate Processing Apparatus, and Control Program - This invention provides a substrate processing method including a step of covering in advance the surface of a substrate W with water ( | 12-25-2008 |
| 20080277378 | Method for Chemical-Mechanical Planarization of Copper - Method for polishing copper by chemical-mechanical planarization. The method of the present invention includes dissolving MoO | 11-13-2008 |
| 20110079579 | PLANARIZATION OVER TOPOGRAPHY WITH MOLECULAR GLASS MATERIALS - Molecular glass based planarizing compositions for lithographic processing are disclosed. The processes generally include casting the planarizing composition onto a surface comprised of lithographic features, the planarizing composition comprising at least one molecular glass and at least one solvent; and heating the planarizing composition to a temperature greater than a glass transition temperature of the at least one molecular glass. Exemplary molecular glasses include polyhedral oligomeric silsesquioxane derivatives, calixarenes, cyclodextrin derivatives, and other non-polymeric large molecules. | 04-07-2011 |
| 20080217291 | SUBSTRATE MOUNTING STAGE AND SURFACE TREATMENT METHOD THEREFOR - A substrate mounting stage that prevents poor attraction of substrates so as to improve the operating rate of a substrate processing apparatus. The substrate mounting stage is disposed in the substrate processing apparatus and has a substrate mounting surface on which a substrate is mounted. The arithmetic average roughness (Ra) of the substrate mounting surface is not less than a first predetermined value, and the initial wear height (Rpk) of the substrate mounting surface is not more than a second predetermined value. | 09-11-2008 |
| 20090045164 | "UNIVERSAL" BARRIER CMP SLURRY FOR USE WITH LOW DIELECTRIC CONSTANT INTERLAYER DIELECTRICS - During processing of a semiconductor wafer bearing a structure including a low-k dielectric layer, a cap layer and the metal-diffusion barrier layer, a chemical mechanical polishing method applied to remove the metal-diffusion barrier material involves two phases. In the second phase of the barrier-CMP method, when the polishing interface is close to the low-k dielectric material, the polishing conditions are changed so as to be highly selective, producing a negligible removal rate of the low-k dielectric material. The polishing conditions can be changed in a number of ways including: changing parameters of the composition of the barrier slurry composition, and mixing an additive into the barrier slurry. | 02-19-2009 |
| 20100126961 | Polysilicon Planarization Solution for Planarizing Low Temperature Poly-Silicon Thin Film Panels - A highly aqueous, strongly basic planarizing solution and a process for its use to reducing or essentially eliminating protrusions or projections extending generally upwardly from a generally planar surface of polysilicon film produced by Low Temperature Poly Si (LTPS) annealing a film of amorphous silicon deposited on a substrate; the process including contacting the surface of the generally planar polysilicon film with the highly aqueous, strongly basic solution for a time sufficient to selectively etch the protrusions or projections from the surface of the generally planar polysilicon film without any significant etching of the generally planar polysilicon film, said highly aqueous, strongly basic solution being a solution having a pH of 12 or higher and comprising water, at least one strong base, and at least one etch rate control agent. | 05-27-2010 |
| 20120187084 | SUBSTRATE PROCESSING METHOD - A processing method of a substrate which includes: a first bonding step which bonds a ring-shaped first support member to a first surface of the substrate along the outer periphery of the substrate; a first processing step which processes the substrate; and a first separating step which separates the first support member from the substrate by separation at the bonded position. | 07-26-2012 |
