| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 216012000 | FORMING OR TREATING MASK USED FOR ITS NONETCHING FUNCTION (E.G., SHADOW MASK, X-RAY MASK, ETC.) | 17 |
| 20090014409 | ENDPOINT DETECTION FOR PHOTOMASK ETCHING - Apparatus and method for endpoint detection are provided for photomask etching. The apparatus provides a plasma etch chamber with a substrate support member. The substrate support member has at least two optical components disposed therein for use in endpoint detection. Enhanced process monitoring for photomask etching are achieved by the use of various optical measurement techniques for monitoring at different locations of the photomask. | 01-15-2009 |
| 20080230511 | HALOGEN-FREE AMORPHOUS CARBON MASK ETCH HAVING HIGH SELECTIVITY TO PHOTORESIST - In one embodiment of the present invention, a halogen-free plasma etch processes is used to define a feature in a multi-layered masking stack including an amorphous carbon layer. In a particular embodiment, oxygen (O | 09-25-2008 |
| 20110168665 | Creation of mirror-image patterns by imprint and image tone reversal - Mirror-image patterns for use one patterned media. Methods are implemented to create a mirror-image on the top and bottom of a media disk. These mirror images simplify the creation of electronics for patterned media. Further, the methods allow for a single e-beam master disk to be used to create the stamper for the top and the bottom of the media disk. | 07-14-2011 |
| 20120292285 | MASK SYSTEM AND METHOD OF PATTERNING MAGNETIC MEDIA - A method of patterning a substrate, comprises patterning a photoresist layer disposed on the substrate using imprint lithography and etching exposed portions of a hard mask layer disposed between the patterned photoresist layer and the substrate. The method may also comprise implanting ions into a magnetic layer in the substrate while the etched hard mask layer is disposed thereon. | 11-22-2012 |
| 20120292286 | METHOD FOR MANUFACTURING MICRO-STRUCTURE AND OPTICALLY PATTERNABLE SACRIFICIAL FILM-FORMING COMPOSITION - A micro-structure is manufactured by patterning a sacrificial film, forming an inorganic material film on the pattern, and etching away the sacrificial film pattern through an aperture to define a space having the contour of the pattern. The patterning stage includes the steps of (A) coating a substrate with a composition comprising a cresol novolac resin, a crosslinker, and a photoacid generator, (B) heating to form a sacrificial film, (C) patternwise exposure, (D) development to form a sacrificial film pattern, and (E) forming crosslinks within the cresol novolac resin. | 11-22-2012 |
| 20080272087 | METHOD FOR FABRICATING PROBE FOR USE IN SCANNING PROBE MICROSCOPE - A method of fabricating a probe tip for use in a scanning probe microscope, includes the steps of: forming a triangular prism provided with a passivation film by patterning a {111} general silicon wafer, the passivation film being deposited on two sidewalls of the triangular prism; etching the silicon wafer to make the triangular prism into a probe tip of a triangular pyramid shape; and removing the passivation film. | 11-06-2008 |
| 20110220609 | PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS - There are provided a plasma etching method and a plasma etching apparatus capable of independently controlling distributions of line widths and heights of lines in a surface of a wafer. The plasma etching method for performing a plasma etching on a substrate W by irradiating plasma containing charged particles and neutral particles to the substrate W includes controlling a distribution of reaction amounts between the substrate W and the neutral particles in a surface of the substrate W by adjusting a temperature distribution in the surface of the substrate W supported by a support | 09-15-2011 |
| 20100258524 | METHOD OF DEPOSITING LOCALIZED COATINGS - A method of depositing a non-continuous coating of a first material on a substrate, comprising: a) the formation of a mask on this substrate, by forming at least two mask layers, and etching of at least one cavity in these layers, this cavity having an outline such that a coating, deposited on the substrate, through the cavities of the mask, has at least one discontinuity over said outline of the cavity; b) the deposition of the first material on the substrate, through the cavities of the mask, the coating thus deposited having at least one discontinuity over the outline of said cavity; and c) the mask is removed. | 10-14-2010 |
| 20110210094 | METHODS FOR PRODUCING ZMWS WITH ISLANDS OF FUNCTIONALITY - The application relates to methods for producing islands of functionality within nanoscale apertures. Islands of functionality can be produced by growing an aperture constriction layer from the walls, functionalizing the exposed base of the aperture, then removing the aperture constriction layer. The aperture constriction layer can be produced, for example, by anodically growing an oxide layer onto a cladding through which the aperture extends. The islands of functionality can be used to bind a single molecule of interest, such as an enzyme within the nanoscale aperture. | 09-01-2011 |
| 20090032490 | METHOD OF FABRICATING COLOR FILTER - Methods for fabricating color filters are provided. Firstly, a substrate having a first region and a second region is provided. Then, a first dichroic layer and a first mask layer are formed on the first region sequentially. Next, a second dichroic layer is formed on the substrate to cover the first mask layer and the surface of the second region of the substrate. Thereafter, a second mask layer is formed on the second dichroic layer on the second region. Afterwards, the second dichroic layer on the first region and between the first mask layer and the second mask layer is etched. Then, the first mask layer and the second mask layer are removed. | 02-05-2009 |
| 20080314864 | Method for manufacturing image sensor - Methods of forming a microlens for an image sensor are provided. In one embodiment, the microlens can be oxide film microlens fabricated by forming an oxide film on a substrate; forming a first photoresist pattern on the oxide film; performing a plasma processing with respect to the oxide film using the first photoresist pattern as a mask; removing the first photoresist pattern; and performing an isotropic etching of the plasma processed oxide film. In another embodiment, the oxide film microlens can be fabricated by forming an oxide film on a substrate; forming a first photoresist pattern on the oxide film; implanting ions into the oxide film using the first photoresist pattern as a mask; removing the first photoresist pattern; and performing an isotropic etching of the ion implanted oxide film. Convex shaped microlens can be provided as a result of the etching selectivity to the oxide film. | 12-25-2008 |
| 20080203053 | Method for manufacturing magnetic recording medium, stamper, transferring apparatus, and method for forming resin mask - A reliable magnetic recording medium manufacturing method is provided in which a resin material used for processing a recording layer into a concavo-convex pattern can be removed reliably. In the magnetic recording medium manufacturing method, an energy ray curable resin material is spread over a continuous recording layer. Then, a stamper having a predetermined concavo-convex pattern is brought into contact with the resin material to transfer the concavo-convex pattern to the resin material, and the resin material is irradiated with energy rays such that the irradiation energy on a portion excluding the edge portion of the resin material is greater than that on the edge portions. The curing reaction proceeds to a greater extent in the portion excluding the edge portions than in the edge portions. Then, the resin material is etched and removed such that more resin material is removed from the edge portions than from the other portion. | 08-28-2008 |
| 20080197107 | Method of fabricating a grayscale mask using a wafer bonding process - A method of fabricating a grayscale mask includes preparing a quartz wafer; depositing a layer of Si | 08-21-2008 |
| 20110000874 | METHOD FOR STRIPPING PHOTORESIST - Disclosed is a method for stripping a photoresist comprising: (I) providing a photoresist pattern on a substrate where the substrate has at least a copper (Cu) wiring and a low-dielectric layer thereon, and selectively etching the low-dielectric layer by using the photoresist pattern as a mask; (II) contacting the substrate after the step (I), with ozone water and/or aqueous hydrogen peroxide; and (III) contacting the substrate after the step (II), with a photoresist stripping solution that contains at least a quaternary ammonium hydroxide. The present invention provides a method for stripping a photoresist that enables to strip effectively photoresist films and etching residues after etching step even in a process not including an O | 01-06-2011 |
| 20120160801 | Superfine Pattern Mask, Method for Production Thereof, and Method Employing the Same for forming Superfine Pattern - There are provided a composition for forming a superfine pattern and a method employing the same for forming a superfine pattern. The composition enables to simply produce a superfine pattern with high mass productivity. | 06-28-2012 |
| 20120248061 | INCREASING MASKING LAYER ETCH RATE AND SELECTIVITY - Provided is a method and system for increasing etch rate and etch selectivity of a masking layer on a substrate, wherein the system comprises a plurality of substrates containing the masking layer and a layer of silicon or silicon oxide, an etch processing chamber configured to process the plurality of substrates, the processing chamber containing a treatment liquid for etching the masking layer, and a boiling apparatus coupled to the processing chamber and configured to generate a supply of steam water vapor mixture at elevated pressure, wherein the steam water vapor mixture is introduced into the processing chamber at a controlled rate to maintain a selected target etch rate and a target etch selectivity ratio of the masking layer to silicon or silicon oxide. | 10-04-2012 |
| 20110226725 | PATTERN FORMING METHOD - A pattern forming method including: (a) forming a porous layer above an etching target layer; (b) forming an organic material with a transferred pattern on the porous layer; (c) forming, by use of the transferred pattern, a processed pattern in a transfer oxide film that is more resistant to etching than the porous layer; and (d) transferring the processed pattern to the etching target layer by use of the transfer oxide film as a mask. | 09-22-2011 |
