Class / Patent application number | Description | Number of patent applications / Date published |
205082000 | Controlling coating process in response to measured or detected parameter | 63 |
20080257740 | Electrolysis Cell Electrolyte Pumping System - A system for pumping electrolyte through an electrolysis cell where the pressure of at least a portion of the gas generated by the electrolysis cell is used as driving force for the pumping. The system may include an electrolyte reservoir and a pumping chamber connected via an inlet conduit to receive electrolyte from the electrolysis cell and connected via an outlet conduit to flow electrolyte to the electrolysis cell. The pumping chamber is connected to the electrolysis cell to receive at least a portion of the gas generated by the electrolysis cell to elevate the pressure of the electrolyte therein and force it into the electrolysis cell. | 10-23-2008 |
20090183992 | METHOD OF FORMING A MULTILAYER STRUCTURE - Method of forming a multilayer structure by electroetching or electroplating on a substrate. A seed layer is arranged on the substrate and a master electrode is applied thereto. The master electrode has a pattern layer forming multiple electrochemical cells with the substrate. A voltage is applied for etching the seed layer or applying a plating material to the seed layer. A dielectric material ( | 07-23-2009 |
20090229985 | SEMICONDUCTOR DEVICE PRODUCTION METHOD AND SEMICONDUCTOR PRODUCTION APPARATUS - A semiconductor device production method of the present invention first collects data including an initial volume of plating solution, volume of replenished solution, number of wafers processed, value of current applied and volume of waste solution in a step of filling a metal plating film in a via hole or a trench formed in an insulating film on a semiconductor substrate. Then, a cumulative charge during the plating is calculated based on the obtained current value. Also, a total volume of plating solution is calculated. Furthermore, an amount of decomposition products of suppressors contained in the plating solution based on the calculated total volume of plating solution, the volume of waste solution and the calculated cumulative charge. The semiconductor substrate is plated only when the amount of decomposition products is equal to or smaller than a predetermined threshold. | 09-17-2009 |
20090301888 | METHOD OF DETERMINING OPERATING CONDITION FOR ROTARY SURFACE TREATING APPARATUS - It is an object of the present invention to derive the optimum operating condition parameters for plating operation accurately and efficiently. At first, a preliminary test operation is carried out under the energized condition (S | 12-10-2009 |
20100065431 | Electrochemical Fabrication Process Including Process Monitoring, Making Corrective Action Decisions, and Taking Appropriate Actions - Electrochemical fabrication processes and apparatus for producing multi-layer structures include operations or means for providing enhanced monitoring of build operations or detection of the results of build operations, operations or means for build problem recognition, operations or means for evaluation of corrective action options, operations or means for making corrective action decisions, and operations or means for executing actions based on those decisions. | 03-18-2010 |
20100078329 | OPTICALLY MONITORING AN ALOX FABRICATION PROCESS - A method of forming an insulator that passes through a metal substrate ( | 04-01-2010 |
20100224497 | DEVICE AND METHOD FOR THE EXTRACTION OF METALS FROM LIQUIDS - A volume-porous electrode is provided which increases effectiveness and production of electrochemical processes. The electrode is formed of a carbon, graphitic cotton wool, or from carbon composites configured to permit fluid flow through a volume of the electrode in three orthogonal directions. The electrode conducts an electrical charge directly from a power source, and also includes a conductive band connected to a surface of the electrode volume, whereby a high charge density is applied uniformly across the electrode volume. Apparatus and methods which employ the volume-porous electrode are disclosed for removal of metals from liquid solutions using electroextraction and electro-coagulation techniques, and for electrochemical modification of the pH level of a liquid. | 09-09-2010 |
20100243460 | SYSTEM, METHOD AND APPARATUS FOR MEASURING ELECTROLYSIS CELL OPERATING CONDITIONS AND COMMUNICATING THE SAME - System, method and apparatus for measuring electrolysis cell operating conditions and communicating the same are disclosed. The system includes a selectively positionable member coupled to an analytical apparatus, wherein the selectively positionable is configured to move the analytical apparatus into and out of physical communication with a bath. The system may also include a crust breaker for breaking the surface of a bath and an electronic device for measuring bath level. | 09-30-2010 |
20110162969 | Intelligent control system for electrochemical plating process - A method and system are disclosed for controlling plating bath compositions. Speciation analyzers including HPLC and mass spectrometry are employed to separate, detect, identify, and quantify additives and degradation products. A control unit is linked to a plating bath interface, analyzer interface, and valves to control the flow of plating bath to an analyzer sampler and back to plating bath. For each degradation product, a response output is determined for at least one performance factor in terms of an additive equivalent amount that produces the same effect. A data processing unit receives concentration data for additives and degradation products from speciation analyzers and calculates an amount of each additive needed to replenish a used bath. As a result, the bleed-and-feed ratio for maintaining plating baths can be substantially reduced with significant productivity improvement and cost savings in terms of chemicals, chemical disposal, less down time and improved product quality. | 07-07-2011 |
20110210005 | DEVICE SUITABLE FOR THE ELECTROCHEMICAL PROCESSING OF AN OBJECT AND A METHOD THEREFOR - Device and method suitable for the electrochemical processing of an object. The device is provided at least with a chamber for accommodating an electrolyte, means for supporting the object to be processed in this chamber, electrodes arranged in this chamber, and control means for applying an electric current between the object to be processed and the electrodes. | 09-01-2011 |
20120211368 | Gate Controlled Atomic Switch - The invention relates to a method for producing a switch element. The invention is characterized in that the switch element comprises three electrodes that are located in an electrolyte, two of which (source electrode and drain electrode) are interconnected by a bridge consisting of one or more atoms that can be reversibly opened and closed. The opening and closing of said contact between the source and drain electrodes can be controlled by the potential that is applied to the third electrode (gate electrode). The switch element is produced by the repeated application of potential cycles between the gate electrode and the source or drain electrode. The potential is increased and reduced during the potential cycles until the conductance between the source and drain electrode can be switched back and forth between two conductances, as a result of said change in potential in the gate electrode, as a reproducible function of the voltage of the gate electrode. | 08-23-2012 |
20120279862 | CONTINUOUS MICRO ANODE GUIDED ELECTROPLATING DEVICE AND METHOD THEREOF - A continuous micro anode guided electroplating device and a method thereof are revealed. By real-time image monitoring and capillary action of the micro/nanoscale tube, a three-dimensional microstructure is deposited on a workpiece at the cathode. The deposit is growing smoothly under the real-time image monitoring. Moreover, the workpiece is not immersed in an electrolyte so that contaminations of the workpiece caused by electrolyte are reduced. | 11-08-2012 |
20120325667 | MULTI-ANODE SYSTEM FOR UNIFORM PLATING OF ALLOYS - Disclosed are embodiments of an electroplating system and an associated electroplating method that allow for depositing of metal alloys with a uniform plate thickness and with the means to alter dynamically the alloy composition. Specifically, by using multiple anodes, each with different types of soluble metals, the system and method avoid the need for periodic plating bath replacement and also allow the ratio of metals within the deposited alloy to be selectively varied by applying different voltages to the different metals. The system and method further avoids the uneven current density and potential distribution and, thus, the non-uniform plating thicknesses exhibited by prior art methods by selectively varying the shape and placement of the anodes within the plating bath. Additionally, the system and method allows for fine tuning of the plating thickness by using electrically insulating selectively placed prescribed baffles. | 12-27-2012 |
20130087463 | Method and System for Metal Deposition in Semiconductor Processing - The present invention provides a system and a method for metal deposition in semiconductor processing, the system comprising a plating tool with one or more plating tanks, each containing one of a respective electrolyte solution, one or more replenishment sections each fluidly connected to a respective one of the one or more plating tanks, one or more draining sections each fluidly connected to a respective one of the one or more plating tanks, and a control system adapted to operate the one or more replenishing sections and/or the one or more draining sections so as to maintain a condition of the electrolyte solutions. | 04-11-2013 |
20130105327 | MANUFACTURING METHOD AND MANUFACTURING APPARATUS OF SUPPORT FOR PLANOGRAPHIC PRINTING PLATE | 05-02-2013 |
20140166492 | Sn ALLOY PLATING APPARATUS AND METHOD - An Sn alloy plating apparatus includes: a plating bath having a cathode chamber for holding therein an Sn alloy plating solution in which the substrate is to be immersed and an anode chamber for holding therein an anolyte containing Sn ions and an acid; an Sn anode located in the anode chamber; and an electrolytic solution supply line configured to supply an electrolytic solution containing the acid into the anode chamber such that a Sn ion concentration of the anolyte in the anode chamber is kept not less than a predetermined value and a concentration of the acid in the anolyte is kept not less than a predetermined acceptable value. The electrolytic solution supply line supplies the electrolytic solution into the anode chamber to increase an amount of the anolyte in the anode chamber and supply the anolyte into the Sn alloy plating solution by the increased amount. | 06-19-2014 |
20150041327 | APPARATUSES AND METHODS FOR MAINTAINING PH IN NICKEL ELECTROPLATING BATHS - Disclosed herein are electroplating systems for electroplating nickel onto a semiconductor substrate having an electroplating cell for holding an electrolyte solution during electroplating which includes a cathode chamber and an anode chamber configured to hold a nickel anode, and having an oxygen removal device arranged to reduce oxygen concentration in the electrolyte solution as it is flowed to the anode chamber during electroplating and during idle times when the system is not electroplating. Also disclosed herein are methods of electroplating nickel onto a substrate in an electroplating cell having anode and cathode chambers, which include reducing the oxygen concentration in an electrolyte solution, flowing the electrolyte solution into the anode chamber and contacting a nickel anode therein, and electroplating nickel from the electrolyte solution onto a substrate in the cathode chamber, wherein the electrolyte solution in the cathode chamber is maintained at a pH of between about 3.5 and 4.5. | 02-12-2015 |
20150060290 | Dynamic Formation Protocol for Lithium-Ion Battery - A dynamic formation protocol for a lithium-ion battery cell. An “SEI formation end voltage” is identified, which is the voltage reached during formation at which the SEI layer is substantially formed. Charge rates are selected for the formation, with a first charge current rate to be used until the SEI formation end voltage is reached, and a second charge current rate, faster than the first charge current rate, to be used thereafter the SEI formation end voltage. These charge rates are applied to the cell for at least a first cycle of the dynamic formation process. | 03-05-2015 |
20150299891 | METHODS AND APPARATUSES FOR ELECTROPLATING NICKEL USING SULFUR-FREE NICKEL ANODES - Disclosed herein are systems and methods for electroplating nickel which employ substantially sulfur-free nickel anodes. The methods may include placing a semiconductor substrate in a cathode chamber of an electroplating cell having an anode chamber containing a substantially sulfur-free nickel anode, contacting an electrolyte solution having reduced oxygen concentration with the substantially sulfur-free nickel anode contained in the anode chamber, and electroplating nickel from the electrolyte solution onto the semiconductor substrate placed in the cathode chamber. The electroplating systems may include an electroplating cell having an anode chamber configured for holding a substantially sulfur-free nickel anode, a cathode chamber, and a substrate holder within the cathode chamber configured for holding a semiconductor substrate. The systems may also include an oxygen removal device arranged to reduce oxygen concentration in the electrolyte solution as it is flowed to the anode chamber. | 10-22-2015 |
20150308010 | SUBSTRATE PROCESSING METHOD - A substrate processing method which can improve a throughput by simultaneously processing various types of substrates is disclosed. The substrate processing method includes: dividing substrate holders into a first group and a second group; assigning each one of the substrate holders to either a first recipe or a second recipe; calculating a total transporting time in each of all possible transporting orders of transporting substrates and the substrate holders for performing a first process according to the first recipe and a second process according to the second recipe; determining a transporting order that provides a shortest total transporting time; and performing the first process on one or a plurality of substrates using substrate holders belonging to the first group and performing the second process on one or a plurality of substrates using substrate holders belonging to the second group while transporting the substrates according to the determined transporting order. | 10-29-2015 |
20160115617 | PREVENT AND REMOVE ORGANICS FROM RESERVOIR WELLS - Plating bath and well structures and methods are described to stop the organic compounds present in plating reservoir wells or bath solution from rising, i.e., climbing up the reservoir wall. An electroplating apparatus includes a vessel holding a liquid solution including metal plating material and an organic species, and a method of operating an electroplating apparatus. The apparatus is designed with plating bath and structures and methods to stop the organic compounds present in plating reservoir wells or bath solution from rising, i.e., climbing or wicking up the inner surfaces of reservoir walls, and to wash them back down on a continuous or cyclical basis in order to maintain a concentration of organic compounds in the plating solution within upper and lower specification limits. | 04-28-2016 |
205083000 | Parameter is current, current density, or voltage | 28 |
20090236228 | ANODIZING METHOD AND APPARATUS - An anodizing method in which a workpiece made of aluminum or aluminum alloy is immersed in an electrolytic solution, and treatment is performed in which the application of positive voltage for a very short period of time and the removal of charges are repeated alternately between the workpiece and a cathode arranged in the electrolytic solution includes a step of performing treatment in which the positive voltage application and the charge removal are repeated in a tentative cycle, measuring the control point arrival time of a current waveform at the positive voltage application period, and determining normal positive voltage application time based on the control point arrival time; and a step of performing treatment in which the application of positive voltage and the removal of charges are repeated in a cycle corresponding to the normal positive voltage application time, and forming an anodized film on the surface of the workpiece. | 09-24-2009 |
20090242409 | PLATING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND PLATE PROCESSING SYSTEM - A plating film is formed by the steps of applying a direct current between a cathode and an anode (S | 10-01-2009 |
20090255818 | METHOD FOR MONITORING PATTERNING INTEGRITY OF ETCHED OPENINGS AND FORMING CONDUCTIVE STRUCTURES WITH THE OPENINGS - Disclosed are embodiments of a method that both monitors patterning integrity of etched openings (i.e., ensures that lithographically patterned and etched openings are complete) and forms on-chip conductive structures (e.g., contacts, interconnects, fuses, anti-fuses, capacitors, etc.) within such openings. The method embodiments incorporate an electro-deposition process to provide both the means by which pattern integrity of etched openings can be monitored and also the metallization required for the formation of conductive structures within the openings. Specifically, during the electro-deposition process, electron flow is established by applying a current to the back side of the semiconductor wafer, thus, eliminating the need for a seed layer. Electron flow through the wafer and into the electroplating solution is then monitored and used as an indicator of electroplating in the etched openings and, thereby, as an indicator that the openings are completely etched. | 10-15-2009 |
20090321265 | METHODS AND APPARATUS FOR CONTROLLING CATALYTIC PROCESSES, INCLUDING THE DEPOSITION OF CARBON BASED PARTICLES - Methods and apparatus for controlling a catalytic layer deposition process are provided. A feed stream comprising a carbon source is provided to a catalyst layer. An asymmetrical alternating current is applied to the catalyst layer. A polarization impedance of the catalyst layer is monitored. The polarization impedance can be controlled by varying the asymmetrical alternating current. The controlling of the polarization impedance provides control over the structure and amount of carbon particles deposited on the catalyst layer. The carbon particles may be in the form of nanotubes, fullerenes, and/or nanoparticles. | 12-31-2009 |
20100108526 | ELECTROCHEMICAL ANALYSIS METHOD USING BORON-DOPED ELECTROCONDUCTIVE DIAMOND ELECTRODE - This invention provides an electrochemical analysis method for accurately detecting a harmful substance such as arsenic contained in a solution. In the electrochemical analysis method, a working electrode and a counter electrode are disposed in an object electrolytic solution. A negative potential is applied to the working electrode to electrodeposit the electrolyte onto the surface of the working electrode and thus to form an electrodeposit. Next, the potential of the working electrode is sweeped in a positive potential direction to allow the electrodeposit to elute into the solution and, at the same time, to detect a current change upon a potential change and thus to analyze an object substance dissolved as an electrolyte in the object electrolytic solution. A boron-doped electroconductive diamond electrode or an electrode with gold deposited on its surface is used as the working electrode. | 05-06-2010 |
20100116671 | Apparatus and method for electrochemically depositing metal on a semiconductor workpiece - A process for metallization of a workpiece, such as a semiconductor workpiece. In an embodiment, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures. | 05-13-2010 |
20100122908 | ELECTROPLATING APPARATUS AND METHOD WITH UNIFORMITY IMPROVEMENT - An electroplating system is provided. The electroplating system includes a divided electrode that is arranged to simultaneously provide a plurality of line currents for an electroplating process. The system includes a current control component that is coupled to the divided electrode. The current control component is configured to determine the magnitude of each of the line currents. The current control component is also configured to regulate individual line currents based, at least in part, on the determined magnitude of each of the line currents. | 05-20-2010 |
20100276291 | DEVICE AND METHOD FOR THE ELECTROCHEMICAL DEPOSITION OF CHEMICAL COMPOUNDS AND ALLOYS WITH CONTROLLED COMPOSITION AND/OR STOICHIOMETRY - Disclosed is a method for depositing an alloy and/or chemical compounds on a substrate immersed in an electrolyte ( | 11-04-2010 |
20110162970 | ELECTRODEPOSITION-COATING MONITORING SYSTEM AND METHOD, AND METHOD OF MANUFACTURING ELECTRODEPOSITION-COATED ARTICLE - A monitoring method of the invention is for monitoring electrodeposition coating of an object to be coated in which a conveying mechanism that conveys the object to be coated while the object is immersed in an electrodeposition paint in an electrodeposition bath, and a plurality of electrodes arranged along a conveying direction in which the object to be coated is conveyed by the conveying mechanism are used, the method including: acquiring present position data of the object in the conveying direction; when the acquired present position data has a value corresponding to a predetermined determination position, acquiring an electric current value corresponding to a predetermined one, associated with the determination position, of the electrodes; and determining the occurrence of the abnormality for the object to be coated that is positioned at the determination position, based on whether the acquired electric current value is within a predetermined range. | 07-07-2011 |
20120018309 | Pre-doping system of electrode and pre-doping method of electrode using the same - The present invention provides a pre-doping system of an electrode and a system using the same. The pre-doping system includes: a doping means for performing a doping process where lithium ions are doped into an electrode; a measuring means for performing a measuring process where an open-circuit potential of the electrode is measured; a switch unit for selectively performing any one of the doping process and the measuring process; a controller for controlling the doping means, the measuring means, and the switch unit and acquiring the open-circuit potential of the electrode measured by the measuring means. | 01-26-2012 |
20120085653 | METHOD AND APPARATUS FOR PRODUCING CONDUCTIVE POLYMER FILM - A method for producing a conductive polymer film using an apparatus comprising a prism having a working electrode, a light-emitting means, a light probe disposed on both sides of the prism, a container having an electrolytic solution containing a conductive-polymer-forming monomer and a dopant, a counter electrode immersed in the electrolytic solution, a power supply connected to a working electrode and the counter electrode, and a controller connected to the light probe and the power supply means. The method comprises determining an absorption spectrum from light reflected by the conductive polymer film, storing the relation between the absorbance of the conductive polymer film obtained from the absorption spectrum and a parameter of the conductive polymer film in the controller, and controlling current supply to the electrodes based on the relation of the absorbance and the parameter to obtain a desired parameter. | 04-12-2012 |
20120175262 | METHOD AND APPARATUS FOR ELECTRODEPOSITION OF GROUP IIB-VIA COMPOUND LAYERS - Methods and apparatus are described for electrodeposition of Group IIB-VIA materials out of electrolytes comprising Group IIB and Group VIA species onto surfaces of workpieces. In one embodiment a method of electrodeposition is described wherein the control of the process is achieved by measuring an initial value of the electrodeposition current at the beginning of the process and adding Group VIA species into the electrolyte to keep the electrodeposition current substantially constant, such a within +/−10% of the initial value throughout the deposition period. In another embodiment an apparatus comprising multiple deposition chambers are described, each deposition chamber containing an anode and a workpiece, and wherein two thirds of the deposition chambers within the apparatus contain anodes comprising a substantially pure Group VIA element in their composition, and the rest of the deposition chambers contain anodes free from any Group VIA element in their composition. | 07-12-2012 |
20120234683 | ELECTROCHEMICAL PLATING - A method for electrochemical plating includes providing a wafer for an electrochemical plating (ECP) process, determining a wafer electrical property affecting the ECP process, adjusting a plating current or voltage applied in the ECP process based on the determined wafer electrical property, and electroplating the wafer with the adjusted plating current or voltage. A controller for controlling a power supply, and a system for electrochemical plating are also disclosed. | 09-20-2012 |
20130037412 | METHOD FOR FORMING ANODIZED LAYER - An anodized layer formation method includes: (a) providing an aluminum base or an aluminum film deposited on a support; anodization step (b) in which a forming voltage is increased to a predetermined first voltage level under a predetermined condition with a surface of the aluminum base or a surface of the aluminum film being kept in contact with an electrolytic solution, and thereafter, the forming voltage is maintained at the first voltage level for a predetermined period of time, whereby a porous alumina layer which has a minute recessed portion is formed; and etching step (c) in which, after step (b), the porous alumina layer is brought into contact with an etching solution, whereby the minute recessed portion is enlarged and a lateral surface of the minute recessed portion is sloped. | 02-14-2013 |
20130075264 | SUBSTRATE PLATING APPARATUS WITH MULTI-CHANNEL FIELD PROGRAMMABLE GATE ARRAY - A system for electroplating a substrate includes one or more controllers, with each controller having an FPGA with one or more output channels. A bulk power supply is connected to each controller. One or more transistors are associated with each output channel. An electroplating chamber has one or more electrodes, with each electrode connected to at least one output channel. The system may include a waveform capture and viewing circuit providing built-in process verification and diagnostic tools. The system may also have a throttle back mode which attempts to maintain proper anode current ratios by reducing setpoints of all anodes by the same percentage, if a fault condition causes a reduction in current to one of the anodes. Blackbox logging may also optionally be used for recording selected data values into a circular buffer having a selected amount of memory. | 03-28-2013 |
20140116884 | SYSTEM AND METHOD FOR CONTROLLING ELECTROPLATING - Disclosed herein is a system and method for controlling electroplating, the method including: measuring current applied to an object to be plated at the time of electroplating, by a current sensor; receiving current data corresponding to the current applied to the object to be plated at the time of electroplating to execute necessary processing, and transmitting the processed current data to the HMI, by the measurement system; receiving the current data from the measurement system to execute necessary processing, and transmitting the processed data to the PLC, by the HMI; receiving the data from the HMI and storing the data in a memory, and then comparing and computing the stored current measurement value and a set current value, to control an output of the rectifier, by the PLC; and controlling the current supplied to the electroplating bath according to the control of the PLC, by the rectifier. | 05-01-2014 |
20140367264 | AUTOMATIC IN-SITU CONTROL OF AN ELECTRO-PLATING PROCESSOR - In an electroplating processor having at least one anode and one thief electrode, reference electrodes are used to measure a voltage gradient in the electrolyte near the edge of the wafer. The voltage gradient is used to calculate the current at the wafer surface using a control volume/current balance technique. The fraction of the total wafer current flowing to the edge region of the wafer is determined and compared to a target value. The processor controller changes at least one of the anode and thief currents to bring the actual edge region current toward the target current. | 12-18-2014 |
20140367265 | NON-CONTACT SHEET RESISTANCE MEASUREMENT OF BARRIER AND/OR SEED LAYERS PRIOR TO ELECTROPLATING - A measurement tool for measuring an electrical parameter of a metal film deposited on a front side of a workpiece includes an electrical sensor connected to a workpiece contact point, an energy beam source with a beam impact location on the front side, a holder and a translation mechanism capable of translating the holder relative to the workpiece support, the beam source supported on the holder, and a computer programmed to sense a behavior of an electrical parameter sensed by the sensor. | 12-18-2014 |
20150008132 | IN-SITU FINGERPRINTING FOR ELECTROCHEMICAL DEPOSITION AND/OR ELECTROCHEMICAL ETCHING - The invention relates to an electrochemical analysis method for monitoring and controlling the quality of electrochemical deposition and/or plating processes whereby the electrochemical analysis method uses a fingerprinting analysis method of an output signal to have an indicator of whether the chemistry and/or process is operating in the normally expected range, whereby the method utilizes one or more substrates as working electrode(s) and a) whereby the potential between the one or more working electrodes and one or more reference electrodes being analyzed to provide an output signal fingerprint which is represented as potential difference as a function of time or b) the input power of a process power supply to provide input energy in the form of current and/or potential between the working electrode(s) and a counter-electrode whereby the method utilizes the potential between the one or more working electrode(s) and at least one of: one or more reference electrodes; or one or more counter-electrodes; to provide an output signal fingerprint. The invention also relates to an electrochemical system (FIG. | 01-08-2015 |
20150041328 | SENSOR GROWTH CONTROLLER - A method for plating electrodes includes contacting a substrate with an electrolyte, the substrate comprising a plurality of working electrodes, applying an electric potential to one or more working electrodes of the plurality of working electrodes, monitoring a separate current through each of the one or more working electrodes of the plurality of working electrodes, and in response to determining that a first current through a first electrode of the plurality of working electrodes has reached a predetermined value, interrupting the first current through the first working electrode. | 02-12-2015 |
20150075994 | SYSTEM AND METHOD FOR ELECTROREFINING OF SILICON - The present disclosure provides methods and systems for electrorefining high-purity materials, for example, silicon. An exemplary system includes at least one cathode, an anode, and a reference electrode. At least one controller, for example a potentiostat, is used to control the potential difference between a reference electrode and a cathode or anode. The system can be operated in a single phase or multiple phase operation to produce high-purity materials, such as solar-grade silicon. | 03-19-2015 |
20150322584 | SYSTEM AND METHODS FOR ELECTROCHEMICAL GRINDING WITH A SCREEN - A system and methods are provided for electrochemical grinding a workpiece. In one embodiment, a method includes controlling potentials to grinding tool and the workpiece, controlling applying electrolyte, and controlling grinding of the workpiece by the grinding tool. The method may also include determining screen replacement when there is sufficient metal plated. | 11-12-2015 |
20150337452 | APPARATUSES, SYSTEMS AND METHODS THAT ALLOW FOR SELECTIVE REMOVAL OF A SPECIFIC METAL FROM A MULTI-METAL PLATING SOLUTION - Disclosed is an apparatus wherein an electric circuit with at least a power source, two electrodes and a plating solution is established. The plating solution comprises a solvent and, dissolved in the solvent, at least a first metal and a second metal. The power source supplies a current to the electric circuit during a plating process. The amount of electric current is above that required to achieve the overpotential for plating the first metal, but below that required to achieve the overpotential for plating the second metal such that only the first metal plates. This apparatus can be implemented, for example, in conjunction with a plating apparatus or an analysis and dosing apparatus of an electrodeposition system. In the case of an analysis and dosing apparatus, additional components further allow for the addition of that specific metal back into the plating solution. Also disclosed herein are associated methods. | 11-26-2015 |
20150354084 | PLATING APPARATUS AND PLATING METHOD - A plating apparatus | 12-10-2015 |
20160010236 | FORMING A TRANSPARENT METAL OXIDE LAYER ON A CONDUCTIVE SURFACE OF A DIELECTRIC SUBSTRATE | 01-14-2016 |
20160090662 | Current Monitoring for Plating - Various implementations of a method include receiving a measurement of an electrical current provided to a component undergoing electroplating, analyzing the current measurement, and adjusting the current based at least on the analyzing. The receiving, analyzing, and adjusting may be performed on a substantially continuous ongoing basis throughout the electroplating, and/or without interrupting the electroplating. In various implementations, the method includes measuring a current through a neck portion of a hangar to which the component is affixed. The adjusting may regulate the current based on a variety of conditions and target factors. | 03-31-2016 |
20160097141 | PLATING METHOD - A method of plating a substrate, such as a wafer, by applying a voltage between the substrate and an anode is disclosed. The plating method includes: preparing a substrate having a recess formed in a surface thereof, a conductive layer being formed in at least a part of the recess; placing an insoluble anode and the substrate in contact with a copper sulfate plating solution containing an additive; applying a predetermined plating voltage between the substrate and the insoluble anode by a plating power source to plate the substrate; and shutting off a reverse electric current, which flows from the insoluble anode to the substrate via the plating power source, by a diode disposed between the insoluble anode and the substrate when the predetermined plating voltage is not applied. | 04-07-2016 |
20160108545 | METHOD OF DISTRIBUTING CURRENT IN ELECTRODEPOSITION PROCESS - A method is provided for electrodepositing a coating a conductive workpiece. The method provides for individually switching on or off electrodes both interior to and exterior to the workpiece so as to control the deposition of the coating material on the interior surface and the exterior surface of the workpiece. Further, an electrode having insulating positioners can be utilized to provide for better centering of the electrode in the interior of the workpiece. | 04-21-2016 |
205084000 | Parameter is thickness, weight, or composition of coating | 14 |
20090000950 | AUTOMATIC DEPOSITION PROFILE TARGETING - A method of automatic deposition profile targeting for electrochemically depositing copper with a position-dependent controllable plating tool including the steps of depositing copper on a patterned product wafer, measuring an actual thickness profile of the deposited copper and generating respective measurement data, feeding the measurement data to an advanced process control (APC) model and calculating individual corrections for plating parameters in the position-dependent controllable plating tool. | 01-01-2009 |
20100059385 | METHODS FOR FABRICATING THIN FILM SOLAR CELLS - The present invention relates to CIGS solar cell fabrication. The invention discloses a method for fabricating CIGS thin film solar cells using a roll-to-roll system. The invention discloses method to fabricate semiconductor thin film Cu(InGa)(SeS) | 03-11-2010 |
20100163421 | Process for Continuous Coating Deposition and an Apparatus for Carrying Out the Process - An apparatus for continuously forming thin ceramic coatings on metal sheets, foils or wires. The apparatus having a reaction chamber, perforated nylon sheets, nylon bar guides, copper rods attached to a power supply, nylon collecting rods, and an inlet and an outlet. The reaction chamber is capable of containing an electrolytic solution. The copper rods are separately connected to the R, Y, or B phase of the power supply. Each phase is provided with two thyristors and the output of the thyristors is connected to the copper rods using current transformers. A process for continuously forming thin ceramic coatings on metal sheets, foils or wires is also provided. | 07-01-2010 |
20120103821 | FEEDBACK CONTROL OF DIMENSIONS IN NANOPORE AND NANOFLUIDIC DEVICES - Nanofluidic passages such as nanochannels and nanopores are closed or opened in a controlled manner through the use of a feedback system. An oxide layer is grown or removed within a passage in the presence of an electrolyte until the passage reaches selected dimensions or is closed. The change in dimensions of the nanofluidic passage is measured during fabrication. The ionic current level through the passage can be used to determine passage dimensions. Fluid flow through an array of fluidic elements can be controlled by selective oxidation of fluidic passages between elements. | 05-03-2012 |
20120181180 | Method and Apparatus for Maintaining Parallelism of Layers and/or Achieving Desired Thicknesses of Layers During the Electrochemical Fabrication of Structures - Some embodiments of the present invention provide processes and apparatus for electrochemically fabricating multilayer structures (e.g. mesoscale or microscale structures) with improved endpoint detection and parallelism maintenance for materials (e.g. layers) that are planarized during the electrochemical fabrication process. Some methods involve the use of a fixture during planarization that ensures that planarized planes of material are parallel to other deposited planes within a given tolerance. Some methods involve the use of an endpoint detection fixture that ensures precise heights of deposited materials relative to an initial surface of a substrate, relative to a first deposited layer, or relative to some other layer formed during the fabrication process. In some embodiments planarization may occur via lapping while other embodiments may use a diamond fly cutting machine. | 07-19-2012 |
20130008797 | DEVICE AND PROCESS FOR CONTROLLING THE EFFICIENCY OF A METAL ELECTRODEPOSITION BATH - Arranged in a bath contained in a tank are respectively an anodic electrode and a cathodic electrode, which are connected to an electric current generator. The cathodic electrode can be composed of a plurality of individual test specimens suitable for being immersed in the metal bath, and the device additionally includes a controllable electric power supply unit for the individual cathodic test specimens, which is connected to the current generator and includes a mechanism for controlling the current passing through the cathodic test specimens so that a given current flows in each of them. | 01-10-2013 |
20130240363 | METHODS FOR FABRICATING THIN FILM SOLAR CELLS - The present invention relates to CIGS solar cell fabrication. The invention discloses a method for fabricating CIGS thin film solar cells using a roll-to-roll apparatus. The invention discloses method to fabricate semiconductor thin film Cu(InGa)(SeS) | 09-19-2013 |
20140061053 | ELECTROPLATING SYSTEMS AND METHODS FOR HIGH SHEET RESISTANCE SUBSTRATES - In an electroplating process, electric current is applied to two or more electrodes, with the current varying over time according to a multi-variable function. The multi-variable current function is integrated over time, for each electrode, to determine a net plating charge delivered. A plating profile of a plated-on layer of material is compared to a target plating profile. Deviations between the actual plating profile and the target plating profile are identified and used to determine new net plating charges for each electrode. One or more variables of the multi-variable function is changed to provide as new multi-variable function. The new net plating charges are distributed according to the new multi-variable current function, and are used to electroplate a layer of material on a second substrate. | 03-06-2014 |
20140197035 | Device Suitable for the Electrochemical Processing of an Object, a Holder Suitable for Such a Device, and a Method for the Electrochemical Processing of an Object - A device suitable for the electrochemical processing of an object is at least provided with a chamber that is to accommodate an electrolyte, a support for the object that is to be processed in the chamber, at least one set of electrodes located in the chamber such that during operation at least one electrode is located opposite each portion of a surface of said object that is to be processed. The device also includes a controller configured to provide an electric current between the object that is to be processed and the electrodes. | 07-17-2014 |
20140231263 | Method and Apparatus for Maintaining Parallelism of Layers and/or Achieving Desired Thicknesses of Layers During the Electrochemical Fabrication of Structures - Some embodiments of the present invention provide processes and apparatus for electrochemically fabricating multilayer structures (e.g. mesoscale or microscale structures) with improved endpoint detection and parallelism maintenance for materials (e.g. layers) that are planarized during the electrochemical fabrication process. Some methods involve the use of a fixture during planarization that ensures that planarized planes of material are parallel to other deposited planes within a given tolerance. Some methods involve the use of an endpoint detection fixture that ensures precise heights of deposited materials relative to an initial surface of a substrate, relative to a first deposited layer, or relative to some other layer formed during the fabrication process. In some embodiments planarization may occur via lapping while other embodiments may use a diamond fly cutting machine. | 08-21-2014 |
20140367266 | FAST AND CONTINUOUS EDDY-CURRENT METROLOGY OF A CONDUCTIVE FILM - A measurement tool includes a rotation stage supporting an workpiece support, a thickness sensor overlying a workpiece support surface; a translation actuator coupled to the thickness sensor for translation of the thickness sensor relative to the workpiece support surface; and a computer coupled to control the rotation actuator and the translation actuator, and coupled to receive an output of the thickness sensor. | 12-18-2014 |
20140367267 | ELECTROPLATING TOOL WITH FEEDBACK OF METAL THICKNESS DISTRIBUTION AND CORRECTION - An electroplating reactor includes an electro-plating solution in a bath, a ring cathode in the bath and located to contact a workpiece such that only the front side of the workpiece is immersed in the solution, plural anodes immersed in the bath below the ring cathode, and plural anode voltage sources coupled to the plural anodes; plural thickness sensors at spatially separate locations on the back side of the workpiece with feedback control to the anode voltage sources. | 12-18-2014 |
20150008133 | ELECTROCHEMICAL DEPOSITION APPARATUS AND METHODS FOR CONTROLLING THE CHEMISTRY THEREIN - An electrochemical deposition system is described. The electrochemical deposition system includes one or more electrochemical deposition modules arranged on a common platform for depositing one or more metals on a substrate, and a chemical management system coupled to the one or more electrochemical deposition modules. The chemical management system is configured to supply at least one of the one or more electrochemical deposition modules with one or more metal constituents for depositing the one or more metals. The chemical management system can include at least one metal enrichment cell and at least one metal-concentrate generator cell. | 01-08-2015 |
20150101934 | CONTROLLED TRIVALENT CHROMIUM PRETREATMENT - A method for forming a trivalent chromium coating on an aluminum alloy substrate includes adding a chromium-containing solution to a vessel, immersing the aluminum alloy substrate in the chromium-containing solution, immersing a counter electrode in the chromium-containing solution, and applying an electrical potential bias to the aluminum alloy substrate with respect to its equilibrium potential to form a trivalent chromium coating on an outer surface of the aluminum alloy substrate. A method for forming a trivalent chromium coating on a metal substrate includes adding a chromium-containing solution to a vessel, immersing the metal substrate in the chromium-containing solution, immersing a counter electrode in the chromium-containing solution, and modulating an electrical potential difference between the metal substrate and the counter electrode to form a trivalent chromium coating on an outer surface of the metal substrate. | 04-16-2015 |