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204 - Chemistry: electrical and wave energy

204193000 - APPARATUS

204298010 - Coating, forming or etching by sputtering

204298020 - Coating

204298120 - Specified target particulars

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DocumentTitleDate
20090057139Pot-Shaped Copper Sputtering Target and Manufacturing Method Thereof - Provided is a pot-shaped copper sputtering target manufactured with die forging, wherein the Vickers hardness Hv at all locations of the inner surface of the pot-shaped target is 70 or greater. With this pot-shaped copper sputtering target, the average crystal grain size in the target structure is 65 μm or less. Further, the inner surface of the pot-shaped target comprises crystalline orientations of (220), (111), (200), (311) obtained by X-ray diffraction, and the crystalline orientation of the face subject to erosion of the pot-shaped target is of a (220) primary orientation. An object of the present invention is to obtain a manufacturing method of a high quality sputtering target by improving and devising the forging process and heat treatment process to make the crystal grain size refined and uniform, and to obtain a high-quality sputtering target.03-05-2009
20090045051TARGET DESIGNS AND RELATED METHODS FOR COUPLED TARGET ASSEMBLIES, METHODS OF PRODUCTION AND USES THEREOF - Sputtering targets are described that comprise: a) a target surface component comprising a target material; b) a core backing component having a coupling surface, a back surface and at least one open area, wherein the coupling surface is coupled to at least part of the target surface component; and wherein at least part of the target surface component fits into at least one open area of the core backing component. In some embodiments, the target surface component, the core backing component or a combination thereof have at least one surface area feature coupled to or located in the back surface of the core backing component, the target surface component or a combination thereof, wherein the surface area feature increases the cooling effectiveness of the target surface component. Methods of forming a sputtering target are also described that comprises: a) providing a target surface component comprising a surface material; b) providing a core backing component having a coupling surface, a back surface and at least one open area; c) coupling the coupling surface to at least part of the target surface component, wherein at least part of the target surface component fits into the at least one open area of the core backing component.02-19-2009
20110192719SPUTTERING TARGET FOR FORMING THIN FILM TRANSISTOR WIRING FILM - This sputtering target for forming a thin film transistor wiring film has a composition including 0.1 at % to 5 at % of Mg, 0.1 at % to 10 at % of Ca, and the remainder being Cu and inevitable impurities. Either one or both of Mn and Al may further be included at a total amount in a range of 0.1 at % to 10 at %. 0.001 at % to 0.1 at % of P may further be included.08-11-2011
20130037408Indium Target And Manufacturing Method Thereof - The present invention provides an indium target and manufacturing method thereof, where deposition rate is high, initial discharge voltage is low, and deposition rate and discharge voltage, from the start of sputtering to the end of sputtering, are stable. In the indium target, an aspect ratio (length of longer direction/length of shorter direction) of crystal particle, observed from cross-section direction of the target, is 2.0 or less.02-14-2013
20130032477Ni ALLOY SPUTTERING TARGET, Ni ALLOY THIN FILM AND Ni SILICIDE FILM - Provided is a Ni alloy sputtering target containing Pt in an amount of 5 to 30 at %, and one or more components selected from V, Al, Cr, Ti, Mo, and Si in a total amount of 1 to 5 at %, wherein the remainder is Ni and unavoidable impurities. The present invention is able to increase the low pass-through flux (PTF), which is a drawback of a Ni—Pt alloy having high magnetic permeability, increase the erosion area of the target which tends to be small as a result of the magnetic field lines being locally concentrated on the surface of the target during sputtering, and inhibit the difference between the portion where erosion is selectively advanced and the portion where erosion does not advance as much as the erosion progresses.02-07-2013
20100044223Ytterbium Sputtering Target and Method of Producing said Target - Provided is a method of producing an ytterbium sputtering target, wherein an ytterbium target material having Vickers hardness (Hv) of the material surface of 15 or more and 40 or less is prepared in advance, and a surface of the ytterbium target material having the foregoing surface hardness is subject to final finish processing by way of machining. With the ytterbium sputtering target, present invention aims to remarkably reduce the irregularities (gouges) on the target surface after the final finish processing of the target material, and to inhibit the generation of particles during sputtering.02-25-2010
20100108501MO-BASED SPUTTERING TARGET PLATE AND METHOD FOR MANUFACTURING THE SAME - A method for efficiently manufacturing a large-area Mo-based target plate at a high yield is provided. In the manufacturing method, the condition of the content of a trace element and the rolling condition are used in combination to reduce the deformation resistance and to suppress the occurrence of cracks such as edge cracking. The method for manufacturing an Mo-based sputtering target by rolling an Mo-based ingot includes the steps of: manufacturing the Mo-based ingot in which the oxygen concentration is controlled to 10 ppm by mass or more and 1000 ppm by mass or less; and heating and rolling the Mo-based ingot at a rolling temperature of 600° C. or more and 950° C. or less.05-06-2010
20100108502Sputtering Target and Oxide Semiconductor Film - A sputtering target containing oxides of indium (In), gallium (Ga) and zinc (Zn), which includes a compound shown by ZnGa05-06-2010
20100108500ENCAPSULATED SPUTTERING TARGET - Embodiments of the invention provide encapsulated sputtering targets and methods for preparing such targets prior to a physical vapor deposition (PVD) process. In one embodiment, an encapsulated target for PVD is provided which includes a target layer containing lanthanum disposed on a backing plate and an encapsulation layer containing titanium disposed on or over the target layer. In one example, the target layer contains metallic lanthanum or lanthanum oxide and the encapsulation layer contains titanium. The encapsulation layer may have a thickness within a range from about 1,000 Å to about 2,000 Å. In another embodiment, a method for preparing an encapsulated target prior to a PVD process is provided which includes positioning an encapsulated target within a PVD chamber and exposing the encapsulation layer to a plasma while removing the encapsulation layer and revealing an upper surface of the target layer.05-06-2010
20100108503CHALCOGENIDE ALLOY SPUTTER TARGETS FOR PHOTOVOLTAIC APPLICATIONS AND METHODS OF MANUFACTURING THE SAME - In one example embodiment, a sputter target structure for depositing semiconducting chalcogenide films is described. The sputter target includes a target body comprising at least one chalcogenide alloy having a chalcogenide alloy purity of at least approximately 2N7, gaseous impurities less than 500 ppm for oxygen (O), nitrogen (N), and hydrogen (H) individually, and a carbon (C) impurity less than 500 ppm. In a particular embodiment, the chalcogens of the at least one chalcogenide alloy comprises at least 20 atomic percent of the target body composition, and the chalcogenide alloy has a density of at least 95% of the theoretical density for the chalcogenide alloy.05-06-2010
20100108499SPUTTERING TARGET FOR FORMING PHASE-CHANGE FILM AND METHOD FOR MANUFACTURING THE SAME - The present invention provides a sputtering target for forming a phase-change film which generates few particles in sputtering and a method for manufacturing the same. The target of the invention has a composition containing in terms of atomic %, 20.2 to 24.2% of Ge, 20.2 to 24.2% of Sb, and the remainder including Te and inevitable impurities, and having a microstructure in which a Ge05-06-2010
20090139860AG-BASED SPUTTERING TARGET - Disclosed is an Ag-based sputtering target composed of pure Ag or Ag alloy wherein when the average grain size d06-04-2009
20090134022METHOD AND APPARATUS FOR PRODUCING PHOTOCATALYST - A method of producing a photocatalyst according to the invention comprises forming an amorphous titanium oxide and heat-treating it in an atmosphere containing oxygen, whereby a photocatalyst having a good photocatalysis can be obtained. In particular, the amorphous titanium oxide is obtained by using the reactive sputtering method and via deposition at a low temperature and at a high film formation rate. This apparatus can be provided with cooling means to allow enhancement of the throughput of the film formation process.05-28-2009
20090229976Sputtering Target Material Containing Cobalt/Chromium/Platinum Matrix Phase and Oxide Phase, and Process for Producing the Same - Sputtering target materials have improved film-sputtering properties by containing finer metal oxide particles. A process for producing a sputtering target material including a cobalt/chromium/platinum matrix phase and an oxide phase that includes two or more metal oxides including at least chromium oxide wherein the oxide phase is in the form of particles, includes sintering material powder to form the sputtering target material wherein the material powder contains chromium oxide at not less than 1.0 mol % based on the material powder.09-17-2009
20130081944LARGE-AREA SPUTTERING TARGETS - In various embodiments, joined sputtering targets are formed at least in part by spray deposition of the sputtering material and/or welding.04-04-2013
20130081943METHODS OF MANUFACTUING LARGE-AREA SPUTTERING TARGETS - In various embodiments, joined sputtering targets are formed at least in part by spray deposition of the sputtering material and/or welding.04-04-2013
20130134038Ferromagnetic Material Sputtering Target - A ferromagnetic material sputtering target which is a sintered compact sputtering target made of a metal having Co as its main component, and nonmetallic inorganic material particles, wherein a plurality of metal phases having different saturated magnetization exist, and the nonmetallic inorganic material particles are dispersed in the respective metal phases. By increasing the pass-through flux of the sputtering target, it is possible to obtain a stable discharge. Moreover, it is also possible to obtain a ferromagnetic material sputtering target capable of obtaining a stable discharge in a magnetron sputtering device and which has a low generation of particles during sputtering. Thus, this invention aims to provide a ferromagnetic material sputtering target for use in the deposition of a magnetic thin film of a magnetic recording medium, and particularly of a magnetic recording layer of a hard disk adopting the perpendicular magnetic recording system.05-30-2013
20120181172METAL OXIDE-METAL COMPOSITE SPUTTERING TARGET - Disclosed is a metal oxide-metal composite sputtering target which is useful for the formation of a recording layer for an optical information recording medium, said recording layer containing a metal oxide and a metal. Specifically disclosed is a composite sputtering target containing a metal oxide (A) and a metal (B), wherein the maximum value of the circle-equivalent diameter of the metal oxide (A) is controlled to 200 μm or less.07-19-2012
20130087454Magnetic Material Sputtering Target Provided with Groove in Rear Face of Target - Provided is a disk-shaped magnetic material sputtering target having a thickness of 1 to 10 mm, wherein the magnetic material sputtering target includes, on a rear surface thereof, at least one circular groove having a width of 5 to 20 mm and a depth of 0.1 to 3.0 mm centered around a center of the disk-shaped target, spacing of the respective grooves is 10 mm or more, and a non-magnetic material having a thermal conductivity of 20 W/m·K or more is embedded in the groove. The pass through flux density is increased in order to eliminate the defects that occur in the target of a magnetic material, the sputtering efficiency is improved by increasing the spread of plasma and improving the deposition rate, and the usage efficiency of the magnetic material target is additionally improved by inhibiting local erosion and causing the erosion on the target surface to be uniform.04-11-2013
20130087453METHOD FOR FORMING SPUTTER TARGET ASSEMBLIES HAVING A CONTROLLED SOLDER THICKNESS - The present invention relates to a method and apparatus of forming a sputter target assembly having a controlled solder thickness. In particular, the method includes the introduction of a bonding foil, between the backing plate and the sputter target, wherein the bonding foil is an ignitable heterogeneous stratified structure for the propagation of an exothermic reaction.04-11-2013
20130048494SPUTTERING DEVICE - A sputtering device includes a vacuum chamber accommodating a substrate stage which rotates a substrate having a film formation surface. A target that has a sputtered surface formed from magnesium oxide is provided in a circumferential direction of the substrate. An angle of a normal to the film formation surface of the substrate and a normal to the sputtered surface of the target is defined as an angle of inclination θ for the target, and the target is disposed such that the angle of inclination θ satisfies −50+φ<θ<−35+φ. Here, φ is an angle represented by φ=arctan(W/H); H represents the height from the center of the substrate to the center of the target; and W represents the width from the center of the substrate to the center of the target.02-28-2013
20100006430SPUTTERING DEPOSITION APPARATUS AND BACKING PLATE FOR USE IN SPUTTERING DEPOSITION APPARATUS - A backing plate for use in a sputtering deposition apparatus being capable of stably holding Ga, and a sputtering deposition apparatus which is equipped with the backing plate are provided. Such a backing plate for use in a sputtering deposition apparatus is a backing plate for holding a target material which contains Ga, and at least a contact surface of which coming into contact with the target material is constituted from an easily wettable material having a contact angle to Ga in a liquid state of not more than 90°.01-14-2010
20100000860Copper Sputtering Target With Fine Grain Size And High Electromigration Resistance And Methods Of Making the Same - The present invention generally provides a sputtering target comprising copper and a total of 0.001 wt %˜10 wt % alloying element or elements chosen from the group consisting of Al, Ag, Co, Cr, Ir, Fe, Mo, Ti, Pd, Ru, Ta, Sc, Hf, Zr, V, Nb, Y, and rare earth metals. An exemplary copper sputtering containing 0.5 wt % aluminum has superfine grain size, high thermal stability, and high electromigration resistance, and is able to form films with desired film uniformity, excellent resistance to electromigration and oxidation, and high adhesion to dielectric interlayer. An exemplary copper sputtering containing 12 ppm silver has superfine grain size. This invention also provides methods of manufacturing copper sputtering targets.01-07-2010
20090301872Sb-Te Base Alloy Sinter Sputtering Target - Provided is an Sb—Te base alloy sinter sputtering target having Sb and Te as its primary component and comprising a structure in which Sb—Te base alloy particles are surrounded by fine carbon or boron particles; wherein, if the mean diameter of the Sb—Te base alloy particles is X and the particle size of carbon or boron is Y, Y/X is within the range of 1/10 to 1/10000. The present invention seeks to improve the Sb—Te base alloy sputtering target structure, inhibit the generation of cracks in the sintered target, and prevent the generation of arcing during the sputtering process.12-10-2009
20120103804Oxide Sintered Compact, Its Production Method, and Raw Material Powder for Producing Oxide Sintered Compact - An oxide sintered compact made of indium (In), gallium (Ga), zinc (Zn) and oxygen (O) and represented by a formula of InxGayZnzOa [wherein x/(x+y) is 0.2 to 0.8, z/(x+y+z) is 0.1 to 0.5, and a=(3/2)x+(3/2)y+z], wherein the concentration of volatile impurities contained in the oxide sintered compact is 20 ppm or less. Provided is technology for application to the production of an IGZO target capable of achieving high densification and low bulk resistance of the sputtering target, preventing swelling and cracks of the target during the production process, minimizing the generation of nodules, inhibiting abnormal discharge, and enabling DC sputtering.05-03-2012
20120217158METHOD OF MANUFACTURING TITANIUM-CONTAINING SPUTTERING TARGET - A method of manufacturing a titanium-containing sputtering target is disclosed, with the method being capable of reducing the frequency of occurrence of abnormal discharge caused by lattice defects. A first metal powder containing a high melting point metal and a second metal powder containing titanium are manufactured. Subsequently, a mixed powder of the first metal powder and the second metal powder is sintered at a temperature of 695° C. or higher, and then heat-treated at a temperature of 685° C. or lower. After the sintering, the sintered body is heat-treated at a temperature of 685° C. or lower, thereby decreasing plate-like structures (lattice defects) in a sintered phase. Accordingly, it is possible to obtain a titanium-containing sputtering target with which abnormal discharge occurs less frequently.08-30-2012
20120217157SPUTTERING TARGET AND METHOD FOR PRODUCING THE SAME08-30-2012
20090095620Semiconductor device, its manufacturing method, and sputtering target material for use in the method - A semiconductor device enables a barrier layer to fully acquire a barriering property against the diffusion of Cu from a wiring main body and the diffusion of Si from an insulating film, enhances the adhesiveness of the barrier layer and the insulating film and excels in reliability of operation over a long period of time. In this invention, a semiconductor device provided on an insulating film with a wiring includes the insulating film containing silicon (Si), a wiring main body formed of copper (Cu) in a groove-like opening disposed in the insulating film, and a barrier layer formed between the wiring main body and the insulating film and made of an oxide containing Cu and Si and Mn.04-16-2009
20090139859Chromic Oxide Powder for Sputtering Target, and Sputtering Target Manufactured from such Chromic Oxide Powder - Provided is chromic oxide powder for a sputtering target comprised of chromic oxide wherein sulfur is 100 wtppm or less. This sputtering target contains chromic oxide of 5 molar % or higher or chromic oxide, wherein the sulfur content in the sputtering target is 100 wtppm or less, and the purity excluding gas components of moisture, carbon, nitrogen and sulfur is 99.95 wt % or higher. The chromic oxide powder for a sputtering target is able to increase the purity of the chromic oxide itself as well as increase the sintered density upon manufacturing a sputtering target. As a result of manufacturing a sputtering target using this chromic oxide powder, the crystal grains are refined, and provided is a uniform and dense sputtering target that does not generate cracks.06-04-2009
20130213802Sintered Compact Sputtering Target - A sintered compact sputtering target is provided and contains Co and Cr as metal components and includes oxides dispersed in the structure formed of the metal components. The structure of the sputtering target has a region (A) containing Co oxides dispersed in Co and a region (D) containing Cr oxides in a periphery of the region (A). In addition a method of producing the above referenced sintered compact sputtering target is provided and includes the steps of mixing a powder prepared by pulverizing a sintered compact containing Co oxide dispersed in Co, a Co powder, and a Cr power and pressure-sintering the resulting powder mixture to provide a sputtering target.08-22-2013
20130213803Fe-Pt-Based Sputtering Target with Dispersed C Grains - A sintered compact sputtering target in which a composition ratio based on atomicity is represented by a formula of (Fe08-22-2013
20130213804FERROMAGNETIC MATERIAL SPUTTERING TARGET - Provided is a ferromagnetic material sputtering target comprising a metal having a composition that Cr is contained in an amount of 20 mol % or less, Pt is contained in an amount of 5 mol % or more, and the remainder is Co, wherein the target includes a base metal (A) and, within the base metal (A), a Co—Pt alloy phase (B) containing 40 to 76 mol % of Pt, and a metal or alloy phase (C), which is different from the phase (B) and is composed of Co or an alloy comprising Co as a main component. The present invention improves the leakage magnetic flux to provide a ferromagnetic material sputtering target that can perform stable discharge with a magnetron sputtering apparatus.08-22-2013
20090057142Hafnium Alloy Target and Process for Producing the Same - A hafnium alloy target containing either or both of Zr and Ti in a gross amount of 100 wtppm-10 wt % in Hf; wherein the average crystal grain size is 1-100 μm, the impurities of Fe, Cr and Ni are respectively 1 wtppm or less, and the habit plane ratio of the plane {002} and three planes {103}, {014} and {015} lying within 35° from {002} is 55% or greater, and the variation in the total sum of the intensity ratios of these four planes depending on locations is 20% or less. As a result, obtained is a hafnium alloy target having favorable deposition property and deposition speed, which generates few particles, and which is suitable for forming a high dielectric gate insulation film such as HfO or HfON film, and the manufacturing method thereof.03-05-2009
20090057141AG-BASED ALLOY SPUTTERING TARGET - The invention relates to an Ag-based alloy sputtering target including at least one element selected from the group consisting of Ti, V, W, Nb, Zr, Ta, Cr, Mo, Mn, Fe, Co, Ni, Cu, Al, and Si in a total amount of 1 to 15% by weight, in which the Ag-based alloy sputtering target has an arithmetic mean roughness (Ra) of 2 μm or more and a maximum height (Rz) of 20 μm or more at a sputtering surface thereof.03-05-2009
20090057140AG BASE ALLOY SPUTTERING TARGET AND METHOD FOR MANUFACTURING THE SAME - A sputtering target made of an Ag base alloy containing 0.6 to 10.5 atomic % Ta and 2 to 13 atomic % Cu, is characterized in that: when the sputtering surface of the sputtering target is image-analyzed,03-05-2009
20130068614SPUTTER DEPOSITION APPARATUS - A sputter deposition apparatus can sputter the entire sputtering surface of a target, and thereby increase the usage efficiency of the target and prevent arcing. An adhesion-preventing member, which surrounds the outer periphery of a sputtering surface of an electrically-conductive target 03-21-2013
20120111723METHODOLOGY FOR RECYCLING RU AND RU-ALLOY DEPOSITION TARGETS & TARGETS MADE OF RECYCLED RU AND RU-BASED ALLOY POWDERS - A recycled deposition source is ruthenium (Ru) or Ru-based alloy material in the form of a powder material having a size not greater than a 325 mesh size and having an average tap density greater than about 5 gm/cm05-10-2012
20120228133IN-GA-ZN-O-BASED OXIDE SINTERED BODY SPUTTERING TARGET WITH EXCELLENT STABILITY DURING LONG-TERM DEPOSITION - A sputtering target including an oxide sintered body including In, Zn and Ga, wherein a surface compound and an interior compound are essentially of the same crystal type(s).09-13-2012
20090008245Method for Connecting Magnetic Substance Target to Backing Plate, and Magnetic Substance Target - A method for connecting a magnetic substance target to a backing plate with less variation in plate thickness, characterized in having the steps of connecting the magnetic substance target to an aluminum plate beforehand while maintaining the flatness, connecting the magnetic substance target connected to the aluminum plate to the backing plate while maintaining the flatness, and grinding out the aluminum plate, whereby the flatness of the magnetic substance target can be maintained until the magnetic substance target is connected to the backing plate by a relatively simple operation.01-08-2009
20110017591Method of making sputtering target - A method of making a large Mo billet or bar for a sputtering target wherein two or more bodies comprising Mo are placed adjacent one another (e.g. stacked one on the other) with Mo powder metal present at gaps or joints between the adjacent bodies. The adjacent bodies are hot isostatically pressed to form a diffusion bond at each of the metal-to-Mo powder layer-to-metal joint between adjacent bodies to form a billet or bar that can be machined or otherwise formed to provide a large sputtering target. The number and dimensions of the Mo bodies placed adjacent one another are selected to yield a desired large size the billet or bar suitable for the sputtering target. The billet or bar for the sputtering target exhibits a microstructure comprising equiaxed grains of less than 30 microns grain size and exhibits a low oxygen content of less than about 100 ppm by weight.01-27-2011
20090139862ROTATABLE SPUTTER TARGET - The invention relates to a rotatable sputter target and to a method to manufacture such a sputter target. The sputter target comprises a target material and a magnet array located at the interior of the target material. The magnet array defines a central zone extending along the major part of the length of the target material and defines an end zone at each end of the central zone. The target material comprises a first material and a second material. The target material comprises the first material at least on the central zone and comprises the second material at least on the end zones. The second material has a lower sputter deposition rate than the first material. The second material is preferably applied by thermal spraying. The first material comprises a first element and the second material comprises a compound of the first element of the first material.06-04-2009
20120279856Tin Oxide Ceramic Sputtering Target and Method of Producing It - The invention describes a sputtering target comprising a ceramic body having tin oxide as a major constituent and between 0.5 and 15 wt % of at least two other oxides, one of which being antimony oxide, the target having a density of at least 90%, and preferably at least 95%, of the theoretical density (TD) and an electrical resistivity of less than 50 Ohm·cm, and the target having a planar or rotary configuration with a sputtering area of at least 10 cm11-08-2012
20100294657POLYCRYSTALLINE MgO SINTERED BODY, PRODUCTION METHOD THEREFOR, AND MgO SPUTTERING TARGET - Provided is a polycrystal MgO sintered body which is capable of having a sintered density close to a theoretical density thereof, and exhibiting excellent mechanical properties and heat conductivity, while reducing contamination of an atmosphere due to gas generation, and a production method for the sintered body. The polycrystal MgO sintered body has a unique crystalline anisotropy in which (111) faces are oriented along a surface applied with a uniaxial pressure at a high rate. The polycrystalline MgO sintered body is obtained by a method which comprises the steps of: sintering an MgO raw material powder having a particle size of 1 μm or less, under a uniaxial pressure; and then subjecting the sintered powder to a heat treatment under an atmosphere containing 0.05 volume % or more of oxygen, at a temperature of 1273 K or more for 1 minute or more.11-25-2010
20090183987Sputter Target Having a Sputter Material Based on TiO2 and Production Method - A sputter target is provided having a sputter material based on TiO07-23-2009
20110284373Inorganic-Particle-Dispersed Sputtering Target - Provided is an inorganic-particle-dispersed sputtering target in which inorganic particles are dispersed in a Co base material, wherein the inorganic particles have an electric resistivity of 1×1011-24-2011
20110290644Lanthanum Target for Sputtering - Provided are a lanthanum target for sputtering which has a Vickers hardness of 60 or more and no spotty macro patterns on the surface, and a method of producing a lanthanum target for sputtering, wherein lanthanum is melted and cast to produce an ingot, the ingot is subject to knead forging at a temperature of 300 to 500° C. and subsequently subject to upset forging at 300 to 500° C. to form the shape into a rough target shape, and this is additionally subject to machining to obtain a target. This invention aims to offer technology for efficiently and stably providing a lanthanum target for sputtering that has no spotty macro patterns on the surface, and a method of producing the same.12-01-2011
20110297536Sputtering Target And Method Of Fabrication - A process is described for processing metal which includes clock rolling a metal plate until the desired thickness is achieved to form a rolled plate. Sputtering targets and other metal articles are further described.12-08-2011
20110297535ION BEAM SPUTTER TARGET AND METHOD OF MANUFACTURE - A target for use in an ion beam sputtering apparatus made of at least two target tiles where at least two of the target tiles are made of different chemical compositions and are mounted on a main tile and geometrically arranged on the main tile to yield a desired chemical composition on a sputtered substrate. In an alternate embodiment, the tiles are of varied thickness according to the desired chemical properties of the sputtered film. In yet another alternate embodiment, the target is comprised of plugs pressed in a green state which are disposed in cavities formed in a main tile also formed in a green state and the assembly can then be compacted and then sintered.12-08-2011
20110290643Low Melting Point Sputter Targets for Chalcogenide Photovoltaic Applications and Methods of Manufacturing the Same - In one example embodiment, a sputter target structure for depositing semiconducting chalcogenide films is described. The sputter target includes a target body having a target body composition that comprises Cu12-01-2011
20090139858Sputtering Target for Producing Metallic Glass Membrane and Manufacturing Method Thereof - A sputtering target for producing a metallic glass membrane characterized in comprising a structure obtained by sintering atomized powder having a composition of a ternary compound system or greater with at least one or more metal elements selected from Pd, Zr, Fe, Co, Cu and Ni as its main component (component of greatest atomic %), and being an average grain size of 50 μm or less. The prepared metallic glass membrane can be used as a substitute for conventional high-cost bulk metallic glass obtained by quenching of molten metal. This sputtering target for producing the metallic glass membrane is also free from problems such as defects in the metallic glass membrane and unevenness of composition, has a uniform structure, can be produced efficiently and at low cost, and does not generate many nodules or particles. Further provided is a method for manufacturing such a sputtering target for forming the metallic glass membrane.06-04-2009
20120097535Sputtering Target of Ferromagnetic Material with Low Generation of Particles - A ferromagnetic sputtering target comprising metal having a composition containing 20 mol % or less of Cr, and Co as the remainder; wherein the target structure includes a basis metal (A), and flat phases (B), containing 90 wt % or more of Co, within the basis metal (A), the average grain size of the phases (B) is 10 μm or more and 150 μm or less, and the average aspect ratio of the phases (B) is 1:2 to 1:10. Provided is a ferromagnetic sputtering target capable of inhibiting the generation of particles during sputtering, and improving the pass-through flux to achieve a stable electrical discharge with a magnetron sputtering device.04-26-2012
20090101495Mn-CONTAINING COPPER ALLOY SPUTTERING TARGET GENERATING FEW PARTICLES - A Mn-containing copper alloy sputtering target is provided. The target generates a small number of particles and is used to form diffusion inhibiting films and seed films of interconnects of semiconductor devices simultaneously. The target is a Mn-containing copper alloy sputtering target that generates few particles, comprising a copper alloy containing 0.6 to 30 mass % of Mn with the balance consisting of copper and impurities, wherein the impurities are controlled to include a total of 40 ppm or less of metallic impurities, 10 ppm or less of oxygen, 5 ppm or less of nitrogen, 5 ppm or less of hydrogen, and 10 ppm or less of carbon.04-23-2009
20110214987METHOD OF MAKING A SPUTTER TARGET AND SPUTTER TARGETS MADE THEREBY - A method of making sputter targets from a BCC metal or BCC metal alloy is provided. The ingot is e-beamed melted and subjected to vacuum arc reduction. The ingot is then tri-axially forged, keeping the centerline of the ingot in the center of the ingot during the tri-axial forging step. The ingot is then vacuum annealed and clock rolled. During the clock rolling, the center line of the ingot is maintained in the center of the ingot and perpendicular to the compressive forces used during the clock rolling. The clock rolled ingot is then vacuum annealed and provided in a near net shape for usage as a sputter target. Tantalum target materials are disclosed having a purity of at least 99.5% and an interstitial content (CONH) of less than about 25 ppm. Tantalum targets, in accordance with the invention, have a grain size of about 50 to 100 microns and a mixed {100}/{111} texture with a higher % {111} gradient towards the center.09-08-2011
20090090620SPUTTERING TARGET WITH GROOVES AND INTERSECTING CHANNELS - A sputtering chamber has a sputtering target comprising a backing plate and a sputtering plate. The backing plate comprises a backside surface having a plurality of concentric circular grooves and a plurality of arcuate channels which intersect the circular grooves. The sputtering target can be positioned abutting a heat exchanger housing which holds heat transfer fluid and a plurality of rotatable magnets.04-09-2009
20090188789SODIUM/MOLYBDENUM POWDER COMPACTS AND METHODS FOR PRODUCING THE SAME - A method for producing a metal article according to one embodiment may include: Providing a supply of a sodium/molybdenum composite metal powder; compacting the sodium/molybdenum composite metal powder under sufficient pressure to form a preformed article; placing the preformed article in a sealed container; raising the temperature of the sealed container to a temperature that is lower than a sintering temperature of molybdenum; and subjecting the sealed container to an isostatic pressure for a time sufficient to increase the density of the article to at least about 90% of theoretical density.07-30-2009
20120024699COMPOSITE TARGET MATERIAL AND METHOD FOR PRODUCING THE SAME - A composite target material includes titanium oxide in a range between about 50 wt % and about 85 wt % and the remaining comprising stannic oxide or aluminum oxide or a combination of stannic oxide and aluminum oxide. A method for manufacturing composite target material includes the steps of: providing a mixture made of titanium oxide power in a range between about 40 wt % and about 80 wt %, stannic oxide powder or aluminum oxide in a range between about 15 wt % and about 50 wt %, binder in a range between about 5 wt % and about 10 wt %; pressing the mixture to form a blank; sintering the blank; cooling the blank.02-02-2012
20100264023METHOD FOR PRODUCING METAL NITRIDE FILM, METAL OXIDE FILM, METAL CARBIDE FILM OR FILM OF COMPOSITE MATERIAL THEREOF, AND PRODUCTION APPARATUS THEREFOR - Disclosed is a production apparatus for producing on a substrate a film selected from the group consisting of a metal nitride film, a metal oxide film, a metal carbide film and a film of composite material thereof. The production apparatus comprises a substrate holder for supporting the substrate; a chamber capable retaining a reduced pressure therein; an inert gas supply section that supplies inert gas into the chamber; a source gas supply section that supplies a source gas containing atoms selected from the group consisting of nitrogen atoms, oxygen atoms and carbon atoms into the chamber; a target containing a constituent element of a metal film to be formed on the substrate; a pair of sputtering electrodes for sputtering the target using the inert gas supplied from the gas supply section as a sputtering gas; and a metal catalyst which generates radicals by activating the source gas and which is placed outside a plasma region formed by the pair of sputtering electrodes.10-21-2010
20090242394AL-BASED ALLOY SPUTTERING TARGET AND MANUFACTURING METHOD THEREOF - The present invention provides an Al—(Ni, Co)—(Cu, Ge)—(La, Gd, Nd) alloy sputtering target capable of decreasing a generation of splashing in an initial stage of using the sputtering target, preventing defects caused thereby in interconnection films or the like and improving a yield and operation performance of an FPD, as well as a manufacturing method thereof. The invention relates to an Al-based alloy sputtering target which is an Al—(Ni, Co)—(Cu, Ge)—(La, Gd, Nd) alloy sputtering target comprising at least one member selected from the group A (Ni, Co), at least one member selected from the group B (Cu, Ge), and at least one member selected from the group C (La, Gd, Nd) wherein a Vickers hardness (HV) thereof is 35 or more.10-01-2009
20120305393SPUTTER TARGET - In one aspect of the invention, a sputter target is provided comprising a backing plate (12-06-2012
20100282604LANTHANOID-CONTAINING OXIDE TARGET - An oxide target including indium (In) and an element (A) selected from the following group A, wherein it contains an oxide shown by AInO11-11-2010
20090211902SPUTTERING TARGET - The present invention provides a sputtering target in which an occurrence of target cracks can be inhibited. The sputtering target of the invention relates to a sputtering target produced by mixing and sintering a main powder containing In as a main component, which is obtained by pulverizing an ingot consisting of an intermetallic compound, and a sub-powder containing a different component composition from the above-mentioned main powder, wherein a total content of Si, Al and Fe which are unavoidable impurities is 300 ppm by mass or less. Further, the intermetallic compound contains In and at least one selected from Co and Ni.08-27-2009
20090090621Erbium Sputtering Target and Manufacturing Method - Technology for efficiently and stably providing an erbium sputtering target with low generation of particles during sputtering and capable of achieving favorable uniformity of the sputtered film, as well as a method for manufacturing such an erbium sputtering target is provided. More specifically, an erbium sputtering target is manufactured by forging and heat treatment, wherein the target purity is 3N5 or higher, and the average grain size of crystals observed in the target structure is 1 to 20 mm. The method of manufacturing an erbium sputtering target includes the steps of subjecting a vacuum-cast ingot having a purity of 3N5 or higher to constant temperature forging within a temperature range of 1100 to 1200° C., subsequently subjecting the forged target material to heat treatment at a temperature of 800 to 1200° C., adjusting the target purity to be 3N5 or higher and the average grain size of the target structure to be 1 to 20 mm, and cutting this out to obtain a target.04-09-2009
20130098758POWDER, SINTERED BODY AND SPUTTERING TARGET, EACH CONTAINING ELEMENTS OF CU, IN, GA AND SE, AND METHOD FOR PRODUCING THE POWDER - The present invention provides a Cu—In—Ga—Se powder containing Cu, In, Ga and Se in which cracks do not occur during sintering or processing, and a sintered body and sputtering target, each using the same. The present invention relates to a powder containing Cu, In Ga and Se, which contains a Cu—In—Ga—Se compound and/or a Cu—In—Se compound in an amount of 60 mass % or more in total. The powder of the present invention preferably contains an In—Se compound in an amount of 20 mass % or less and/or a Cu—In compound in an amount of 20 mass % or less.04-25-2013
20130098760SPUTTERING TARGET FOR MAGNETIC RECORDING FILM, AND PROCESS FOR PRODUCING SAME - Provided is a sputtering target containing SiO04-25-2013
20090277788Sputtering Target/Backing Plate Bonded Body - Provided is a sputtering target/backing plate assembly having a structure such that pure copper is embedded in a backing plate position at the central portion of the target, within sputtering target/copper-zinc alloy backing plate bonded bodies. Consequently, provided is a simple structure of sputtering target/backing plate capable of sufficiently accommodating further high-power sputtering without deteriorating the characteristics of a copper-zinc alloy backing plate that is inexpensive and excels in strength and anti-eddy current characteristics.11-12-2009
20090045052HIGH STRENGTH SPUTTERING TARGET FOR FORMING PHOSPHOR FILM IN ELECTROLUMINESCENCE ELEMENT - Provided is a sputtering target for forming a phosphor film in an electroluminescence element, which can maintain high strength even when it is allowed to stand in the atmosphere for a long time. The target has a chemical composition of Al: 20 to 50 mass %, Eu: 1 to 10 mass %, and the remainder containing Ba and inevitable impurities, and has a structure wherein Ba in which Eu is solid-solubilized and Al form an intermetallic compound phase, wherein the intermetallic compound phase of Ba in which Eu is solid-solubilized and Al includes a BaAl02-19-2009
20100276282Manufacturing Apparatus and Method for Large-Scale Production of Thin-Film Solar Cells - A method of manufacturing improved thin-film solar cells entirely by sputtering includes a high efficiency back contact/reflecting multi-layer containing at least one barrier layer consisting of a transition metal nitride. A copper indium gallium diselenide (Cu(In11-04-2010
20110203921METHOD OF BONDING ROTATABLE CERAMIC TARGETS TO A BACKING STRUCTURE - This invention relates to a rotatable cylindrical magnetron sputtering apparatus and related process. More specifically, the invention relates to a cylindrical target assembly for a cylindrical magnetron sputtering device which includes a target portion where the target portion is metal, metal oxide, or ceramic and is not bonded to any backing tube. Instead, the cylindrical target is resiliently, yet fixedly mounted to the backing tube by a multiplicity of resilient, yieldable contacts. The assembly allows the target portion to heat up uniformly and expand, thereby allowing the cylindrical magnetron to operate at increased power levels.08-25-2011
20120285826MULTI-BLOCK SPUTTERING TARGET AND ASSOCIATED METHODS AND ARTICLES - A sputtering target that includes at least two consolidated blocks, each block including an alloy including molybdenum in an amount greater than about 30 percent by weight and at least one additional alloying ingredient; and a joint between the at least two consolidated blocks, the joint being free of any microstructure due to an added bonding agent (e.g., powder, foil or otherwise), and being essentially free of any visible joint line the target that is greater than about 200 μm width (e.g., less than about 50 μm width). A process for making the target includes hot isostatically pressing, below a temperature of 1080° C., consolidated perform blocks that may be surface prepared (e.g., roughened to a predetermined roughness value) prior to pressing.11-15-2012
20130118898NON-CONTINUOUS BONDING OF SPUTTERING TARGET TO BACKING MATERIAL - A target assembly comprising—a support body having a carrying surface;—a sputtering target having an attaching surface, said carrying surface and said attaching surface being arranged in opposing facing relation to one another, thereby defining an intermediate space between said carrying surface and said attaching surface; and—a bonding material disposed in the intermediate space for binding said attaching surface to said carrying surface,—wherein distinct areas of one or both of said attaching surface and said carrying surface are selectively, superficially treated to enhance the bonding strength of said bonding material in said distinct areas.05-16-2013
20080271997SPUTTER TARGET AND BACKING PLATE ASSEMBLY - A method for aligning the sputter target onto a backing plate having a peripheral arcuate-shaped flange on its bonding surface to provide an aligned and uniform solder bonded interface; and the sputter target/backing plate assembly so produced.11-06-2008
20110005925TARGET BACKING TUBE, CYLINDRICAL TARGET ASSEMBLY AND SPUTTERING SYSTEM - The present application concerns a target backing tube for a rotatable cylindrical target assembly comprising: a tube for at least one target element to be disposed there around, wherein the tube has an exterior surface adapted to be directed to the at least one target element; and a thermal reflection cover covering a portion of at least 20% of the exterior surface of the tube. Further, the present application concerns a rotatable cylindrical target assembly comprising: said target backing tube and at least one target element disposed around the target backing tube, wherein the thermal reflection cover disposed between the target backing tube and the at least one target element.01-13-2011
20090139863Copper Alloy Sputtering Target and Semiconductor Element Wiring - A first copper alloy sputtering target comprising 0.5 to 4.0 wt % of Al and 0.5 wtppm or less of Si and a second copper alloy sputtering target comprising 0.5 to 4.0 wt % of Sn and 0.5 wtppm or less of Mn are disclosed. The first and/or the second alloy sputtering target can further comprise one or more elements selected from among Sb, Zr, Ti, Cr, Ag, Au, Cd, In and As in a total amount of 1.0 wtppm or less. A semiconductor element wiring formed by the use of the above targets is also disclosed. The above copper alloy sputtering target allows the formation of a wiring material for a semiconductor element, in particular, a seed layer being stable, uniform and free from the occurrence of coagulation during electrolytic copper plating and exhibits excellent sputtering film formation characteristics.06-04-2009
20120298506SPUTTERING TARGET - A sputtering target made of aluminum and one or more alloying elements including Ni, Co, Ti, V, Cr, Mn, Mo, Nb, Ta, W, and rare earth metals (REM). The addition of very small amounts of alloying element to pure aluminum and aluminum alloy target improves the uniformity of the deposited wiring films through affecting the target's recrystallization process. The range of alloying element content is 0.01 to 100 ppm by weight, which is sufficient to prevent dynamic recrystallization of pure aluminum and aluminum alloys, such as 30 ppm Si alloy. The addition of small amount of alloying elements increases the thermal stability and electromigration resistance of pure aluminum and aluminum alloys thin films while sustaining their low electrical resistivity and good etchability. This invention also provides a method of manufacturing microalloyed aluminum and aluminum alloy sputtering target.11-29-2012
20120067721TARGET ASSEMBLY - A target assembly includes a base comprising a first surface and a second surface opposite to the first surface. The base defining a threaded hole; a magnetron mounted on a first surface; a target movably mounted to the second surface, the target defining an opening corresponding to the threaded hole, the opening including a first end and a second end; and a screw. The screw can slide in the opening from the first end to the second end so the position between magnetron and the target is adjusted to adjust the bombarded area of the target.03-22-2012
20090050475Hafnium Alloy Target and Process for Producing the Same - A hafnium alloy target containing either or both of Zr and Ti in a gross amount of 100 wtppm−10 wt % in Hf, wherein the average crystal grain size is 1-100 μm, the impurities of Fe, Cr and Ni are respectively 1 wtppm or less, and the habit plane ratio of the plane {002} and three planes {103}, {014} and {015} lying within 35° from {002} is 55% or greater, and the variation in the total sum of the intensity ratios of these four planes depending on locations is 20% or less. As a result, obtained is a hafnium alloy target having favorable deposition property and deposition speed, which generates few particles, and which is suitable for forming a high dielectric gate insulation film such as HfO or HfON film, and the manufacturing method thereof.02-26-2009
20110139615SPUTTERING TARGET MATERIAL - A sputtering target material includes a copper alloy made of an oxygen free copper with a purity of 99.99% or more doped with Ag of 200 to 2000 ppm. The sputtering target material is formed by casting and rolling. An average grain size of crystal is 30 to 100 μm. A ratio (220)/(111) which is a ratio of an orientation ratio of (220) plane to an orientation ratio of (111) plane calculated based on a peak intensity measurement of an X-ray diffraction at a sputtering surface is 6 or less and a standard deviation indicating a dispersion in the ratio (220)/(111) is 10 or less.06-16-2011
20090205956Method of making low-E coating using ceramic zinc inclusive target, and target used in same - A ceramic target is used in sputter-depositing a contact layer adjacent an infrared (IR) reflecting layer in certain example embodiments. For example, a ZnO08-20-2009
20090211904ZINC OXIDE BASED SPUTTERING TARGET, METHOD OF MANUFACTURING THE SAME, AND ZINC OXIDE BASED THIN FILM - Disclosed are a zinc (Zn) oxide based sputtering target, a method of manufacturing the same, and a Zn oxide based thin film deposited using the Zn oxide based sputtering target. The Zn oxide based sputtering target has a composition of In08-27-2009
20090107837METHODOLOGY FOR RECYCLING RU AND RU-ALLOY DEPOSITION TARGETS & TARGETS MADE OF RECYCLED RU AND RU-BASED ALLOY POWDERS - A method of recycling ruthenium (Ru) and Ru-based alloys comprises steps of: providing a solid body of Ru or a Ru-based alloy; segmenting the body to form a particulate material; removing contaminants, including Fe, from the particulate material; reducing the sizes of the particulate material to form a powder material; removing contaminants, including Fe, from the powder material; reducing oxygen content of the powder material to below a predetermined level to form a purified powder material; and removing particles greater than a predetermined size from the purified powder material. The purified powder material may be utilized for forming deposition sources, e.g., sputtering targets.04-30-2009
20090242393Nonmagnetic Material Particle Dispersed Ferromagnetic Material Sputtering Target - Provided is a nonmagnetic material particle dispersed ferromagnetic material sputtering target comprising a material including nonmagnetic material particles dispersed in a ferromagnetic material. The nonmagnetic material particle dispersed ferromagnetic material sputtering target is characterized in that all particles of the nonmagnetic material with a structure observed on the material in its polished face have a shape and size that are smaller than all imaginary circles having a radius of 2 μm formed around an arbitrary point within the nonmagnetic material particles, or that have at least two contact points or intersection points between the imaginary circles and the interface of the ferromagnetic material and the nonmagnetic material. The nonmagnetic material particle dispersed ferromagnetic material sputtering target is advantageous in that, in the formation of a film by sputtering, the influence of heating or the like on a substrate can be reduced, high-speed deposition by DC sputtering is possible, the film thickness can be regulated to be thin, the generation of particles (dust) or nodules can be reduced during sputtering, the variation in quality can be reduced to improve the mass productivity, fine crystal grains and high density can be realized, and the nonmagnetic material particle dispersed ferromagnetic material sputtering target is particularly best suited for use as a magnetic recording layer.10-01-2009
20090101496COPPER PHYSICAL VAPOR DEPOSITION TARGETS AND METHODS OF MAKING COPPER PHYSICAL VAPOR DEPOSITION TARGETS - The invention includes physical vapor deposition targets formed of copper material and having an average grain size of less than 50 microns and an absence of course-grain areas throughout the target. The invention encompasses a physical vapor deposition target, of a copper material and having an average grain size of less than 50 microns with a grain size standard deviation of fess than 5% (1−σ) throughout the target. The copper material is selected from copper alloys and high-purity copper material containing greater than or equal to 99.9999% copper, by weight. The invention includes methods of forming copper physical vapor deposition targets. An as-cast copper material is subjected to a multistage processing. Each stage of the multistage processing includes a heating event, a hot-forging event, and a water quenching event. After the multistage processing the copper material is roiled to produce a target blank.04-23-2009
20090242395Al-Ni-La-Cu alloy sputtering target and manufacturing method thereof - The present invention provides a technique capable of decreasing a generation of splashing upon depositing by using an Al—Ni—La—Cu alloy sputtering target comprising Ni, La, and Cu. The invention relates to an Al—Ni—La—Cu alloy sputtering target comprising Ni, La and Cu, in which (1) a total area of an Al—Ni intermetallic compound mainly comprising Al and Ni and having an average grain size of 0.3 μm or more and 3 μm or less is 70% or more by area ratio based on an entire area of the Al—Ni intermetallic compound, and (2) a total area of an Al—La—Cu intermetallic compound mainly comprising Al, La and Cu and having an average grain size of 0.2 μm or more and 2 μm or less is 70% or more by area ratio based on an entire area of the Al—La—Cu intermetallic compound, in a case where a portion of the sputtering target is observed within a range of from 1/4 t (t: thickness) to 3/4 t along a cross section vertical to a plane of the sputtering target by using a scanning electron microscope at a magnification of 2000.10-01-2009
20110127162Process for the Manufacture of a High Density ITO Sputtering Target - A process for manufacturing indium tin oxide (ITO) sputtering targets as described. The process includes the precipitation of indium and tin hydroxides, sintering in the absence of chloride ions, using the resultant oxide powders to prepare an aqueous slip with dispersing agent, binder, special high density promoting agents and compacting the slip in a specially surface coated porous mold using the method of slip casting followed by sintering the resultant compacted target body to yield high density ITO target.06-02-2011
20100155237Sputtering target and method for producing sintered oxide - Provided is a sputtering target for forming a transparent conductive film, which has low resistivity and excellent transparency, can be relatively easily patterned in amorphous state by weak acid etching and relatively easily crystallized. A method for manufacturing an oxide sintered body is also provided. The sputtering target is provided for forming the amorphous-state transparent conductive film. The sputtering target is provided with the oxide sintered body containing indium oxide, tin, if needed, and barium.06-24-2010
20100140084METHOD FOR PRODUCTION OF ALUMINUM CONTAINING TARGETS - A method of manufacturing a sputter target is provided which comprises mixing aluminum and at least one other metallic powder to form a powder blend, compressing said powder blend under significant force to achieve a pressed blank having a packing density of at least 50% of the theoretical density, heating the blank at a temperature less then the temperature which would form greater than an average of 25% inter-metallic phases in the blank under the conditions employed, rolling the blank to obtain at least 95% of the theoretical thickness of the blank, and bonding the blank to a suitable substrate. Also provided is a sputter target made from this method.06-10-2010
20110056828MONOLITHIC ALUMINUM ALLOY TARGET AND METHOD OF MANUFACTURING - Aluminum or aluminum alloy sputter targets and methods of making same are provided. The pure aluminum or aluminum alloy is mechanically worked to produce a circular blank, and then the blank is given a recrystallization anneal to achieve desirable grain size and crystallographic texture. A 10-50% additional strain is provided to the blank step after the annealing to increase the mechanical strength. Further, in a flange area of the target, the strain is greater than in the other target areas with the strain in the flange area being imparted at a rate of about 20-60% strain. The blank is then finished to form a sputtering target with desirable crystallographic texture and adequate mechanical strength.03-10-2011
20120228132SPUTTERING TARGET-BACKING PLATE ASSEMBLY, AND ITS PRODUCTION METHOD - A sputtering target-backing plate assembly obtained by bonding a target material of Mg to a backing plate of Cu—Cr alloy, wherein the target material and the backing plate are bonded via a layer of Ni or an alloy comprising Ni as a main component at the interface therebetween. An object of the present invention is to provide a sputtering target-backing plate assembly that is used when magnesium (Mg) is the sputtering target material, and to resolve problems inherent in magnesium (Mg) and problems related to the selection of a backing plate to be compatible with magnesium by improving the bonding strength between the target and the backing plate in order to improve the sputtering efficiency.09-13-2012
20100219070Copper Alloy Sputtering Target, Process for Producing the Same and Semiconductor Element Wiring - A copper alloy sputtering target is provided and contains 0.01 to (less than) 0.5 wt % of at least one element selected from Al or Sn, and containing Mn or Si in a total amount of 0.25 wtppm or less. The above copper alloy sputtering target allows the formation of a wiring material for a semiconductor element, in particular, a seed layer being stable, uniform and free from the occurrence of coagulation during electrolytic copper plating and exhibits excellent sputtering film formation characteristics. A semiconductor element wiring formed with this target is also provided.09-02-2010
20090045053Method of producing a lithium phosphate sintered body and sputtering target - To attain a method of producing a lithium phosphate sintered body and a sputtering target capable of providing a high-density bulk body with no macro-size internal defect, the present invention provides a method of producing a lithium phosphate sintered body, including the steps of: calcining raw material powder of Li02-19-2009
20090071822Alloy and Sputtering Target Material for Soft-Magnetic Film Layer in Perpendicular Magnetic Recording Medium, and Method for Producing the Same - There are provided a sputtering target material for a soft-magnetic film layer with a high saturation magnetic flux density and high amorphous properties and a method for producing the sputtering target material. The target material is made of an alloy comprising one or more of Zr, Hf, Nb, Ta and B in an amount satisfying 5 at %≦(Zr+Hf+Nb+Ta)+B/2≦10 at % and having 7 at % or less of B; 0 to 5 at % in total of Al and Cr; and the balance being Co and Fe in an amount satisfying 0.20≦Fe/(Fe+Co)≦0.65 (at % ratio) with unavoidable impurities.03-19-2009
20090071821Sb-Te Alloy Powder for Sintering, Sintered Compact Sputtering Target Obtained by Sintering said Powder, and Manufacturing Method of Sb-Te Alloy Powder for Sintering - Provided is Sb—Te alloy powder for sintering in which the maximum grain size of the powder obtained by subjecting gas atomized powder of an Sb—Te alloy to mechanical pulverization is 90μm or less, and a sintered compact sputtering target obtained by sintering this powder. Further provided is a manufacturing method of Sb—Te alloy powder for a sintered compact sputtering target including the steps of dissolving an Sb—Te alloy, thereafter subjecting this to gas atomization to obtain atomized powder, and further subjecting this to mechanical pulverization in an inert atmosphere without any atmospheric exposure so as to manufacture powder having a maximum grain size of 90 μm or less and reduced oxygen content. Thus, the Sb—Te alloy sputtering target structure can be uniformalized and refined, generation of cracks in the sintered target can be inhibited, and generation of arcing during sputtering can be inhibited. Further, surface ruggedness caused by sputter erosion can be reduced in order to obtain a high quality Sb—Te alloy sputtering target.03-19-2009
20100307915Barrier for doped molybdenum targets - A sputtering target, including a sputtering layer and a support structure. The sputtering layer includes an alkali-containing transition metal. The support structure includes a second material that does not negatively impact the performance of a copper indium selenide (CIS) based semiconductor absorber layer of a solar cell. The sputtering layer directly contacts the second material.12-09-2010
20100300876Cobalt-iron alloy sputtering target with high pass through flux and method for manufacturing the same - A cobalt-iron alloy sputtering target is made by melting and casting process and consists of cobalt, iron and additive metal, wherein the cobalt has an increased pass through flux content in the cobalt-iron alloy sputtering target and the additive metal has a content from 8 at % 20 at % and is at least one metal selected from the group consisting of tantalum, zirconium, niobium, hafnium, aluminum and chromium. The cobalt-iron alloy sputtering target has increased pass through flux.12-02-2010
20100300878Sintered Oxide Compact Target for Sputtering and Process for Producing the same - Provided is a sintered oxide compact target for sputtering comprising indium (In), gallium (Ga), zinc (Zn), oxygen (O) and unavoidable impurities, wherein the composition ratio of the respective elements satisfies the Formula of In12-02-2010
20100300877HIGH UTILIZATION ROTATABLE TARGET USING CERAMIC TITANIUM OXIDE RING - A sputtering target assembly and its manufacturing method are provided for sputtering ceramic material on a substrate. The sputtering target assembly comprises a backing tube having a central portion, a first end and a second end; at least one cylindrical sputtering target member comprising a first ceramic material; and at least one collar comprising a second ceramic material different than the first ceramic material. The cylindrical sputtering target member is coupled to the backing tube at the central portion, and the collar is coupled to the backing tube at an area between one of the first and second ends and the cylindrical sputtering target member. In one embodiment, the sputtering rate of the collar is less than or equal to the sputtering rate of the cylindrical sputtering target member.12-02-2010
20100320084Sputtering Target of Nonmagnetic-Particle-Dispersed Ferromagnetic Material - Provided is a sputtering target of nonmagnetic-particle-dispersed ferromagnetic material comprising a phase (A) such that nonmagnetic particles are dispersed in a ferromagnetic material formed from a Co—Cr alloy containing 5 at % or more and 20 at % or less of Cr and Co as the remainder thereof, and schistose textures (B) with a short side of 30 to 100 μm and a long side of 50 to 300 μm formed from a Co—Cr alloy phase in the phase (A); wherein each of the foregoing nonmagnetic particles has such a shape and size that the particle is smaller than all hypothetical circles with a radius of 1 μm around an arbitrary point within the nonmagnetic particle, or a shape and size with at least two contact points or intersection points between the respective hypothetical circles and the interface of the ferromagnetic material and the nonmagnetic material. Consequently, obtained is a high-density sputtering target of nonmagnetic-particle-dispersed ferromagnetic material whose crystal grains are fine, which realizes improvement of PTF (pass through flux) of the target, high-speed deposition with a magnetron DC sputtering system, reduction in the particles (dust) and nodules generated during the sputtering process, minimal variation in quality, and improvement of mass productivity.12-23-2010
20110017590Sintered Compact Target and Method of Producing Sintered Compact - Disclosed is a sintered compact target containing an element (A) and an element (B) below, wherein the sintered compact target is free from pores having an average diameter of 1 μm or more, and the number of micropores having an average diameter of less than 1 μm existing in 40000 μm01-27-2011
20110031117SPUTTERING TARGET APPARATUS - A sputtering target apparatus is provided. The sputtering target apparatus includes a first target assembly including a first target array having a first target, a second target disposed adjacent to the first target, and a first target dividing region disposed between the first and second targets, the first target assembly extending along a first direction, wherein the first target dividing region has a longitudinal cross-section that is oblique with respect to the first direction.02-10-2011
20090229975Target formed of Sintering-Resistant Material of High-Melting Point Metal Alloy, High-Melting Point Metal Silicide, High-Melting Point Metal Carbide, High-Melting Point Metal Nitride, or High-Melting Point Metal Boride, Process for Producing the Target, Assembly of the Sputtering Target-Backing Plate, and Process for Producing the Same - Provided is a target formed of a sintering-resistant material of high-melting point metal alloy, high-melting point metal silicide, high-melting point metal carbide, high-melting point metal nitride or high-melting point metal boride comprising a structure in which a target material formed of a sintering-resistant material of high-melting point metal alloy, high-melting point metal silicide, high-melting point metal carbide, high-melting point metal nitride or high-melting point metal boride and a high-melting point metal plate other than the target material are bonded. Additionally provided is a production method of such a target capable of producing, with relative ease, a target formed of a sintering-resistant material of high-melting point metal alloy, high-melting point metal silicide, high-melting point metal carbide, high-melting point metal nitride or high-melting point metal boride, which has poor machinability, can relatively easily produced. Further the generation of cracks during the target production and high power sputtering, and the reaction of the target raw material with the die during hot pressing can be inhibited effectively, and the warpage of the target can be reduced.09-17-2009
20110114480METHOD FOR PACKAGING TARGET MATERIAL AND METHOD FOR MOUNTING TARGET - It is an object to provide a method for packaging a target material with which a thin film that is less contaminated with an impurity in the air such as a compound containing a hydrogen atom can be formed. In addition, it is an object to provide a method for mounting a target with which a thin film that is less contaminated with an impurity can be formed. In order to achieve the objects, a target material in a target is not exposed to the air and kept sealed after being manufactured until a deposition apparatus on which the target is mounted is evacuated.05-19-2011
20110079511MAGNET ARRANGEMENT FOR A TARGET BACKING TUBE AND TARGET BACKING TUBE COMPRISING THE SAME - The disclosure concerns a magnet arrangement for a target backing tube for a rotatable target of a sputtering system, the magnet arrangement having a longitudinal axis and a circumferential direction around the longitudinal axis, and being adapted for an arrangement in a cylindrical backing tube, wherein the magnet arrangement comprises in a circumferential sequence: a first magnet element extending in parallel to the longitudinal axis, a second magnet element extending in parallel to the longitudinal axis, and a third magnet element extending in parallel to the longitudinal axis, wherein each magnet element has a center axis extending in a radial direction, wherein the angular distance between the first and the third magnet elements, with respect to their center axis, is less than about 85 degrees. The disclosure also concerns a cylindrical target assembly and at least one target cylinder disposed around the target backing tube.04-07-2011
20100038241Systems and methods for a target and backing plate assembly - A target and backing plate assembly and method of making the same. The target and backing plate assembly provides a mechanical interlock between the target and backing plate in addition to diffusion bonding between dissimilar materials comprising the target and backing plate. An interlayer may also be used between the target and backing plate. A plurality of ridges, or other salient surface features on one of the target and backing plate are joined to corresponding members or channels on the other of the target and backing plate. The dissimilar materials of the target and backing plate fill negative angled cavities formed by the plurality of ridges and corresponding channels or members of the target and backing plate to accommodate the diffusion bonded dissimilar materials. A target and backing plate assembly with increased strength results.02-18-2010
20100038240Powder-Fiber Adhesive - An adhesive is provided, in particular for the adhesion of conductive materials, having at least one binder component and fillers, wherein the fillers contain fibers or a fiber-powder mixture and the fibers and/or powder contain an electrically conductive material. Further, an assembly is provided made of a sputtering target material and a carrier material with an adhesive.02-18-2010
20090032392Sputtering Target - Provided is a sputtering target in which the ratio of X-ray intensity of (110) measured with X-ray diffraction is 0.4 or less, and even 0.2 or less in a Ta or Ta alloy target. Further provided is a sputtering target in which the ratio of X-ray intensity of (110) on a Ta or Ta alloy target surface measured with X-ray diffraction is 0.8 or less, and the ratio of the foregoing X-ray intensity at a depth of 100 μm or deeper is 0.4 or less. This Ta or Ta alloy target is capable of minimizing the fluctuation of the deposition speed for each target throughout the target life of a sputtering target, and thereby improving and stabilizing the production efficiency of semiconductors during the sputtering process, and contributing to the reduction of production costs.02-05-2009
20100065424ZINC-OXIDE-BASED TARGET - The invention provides a zinc-oxide-based target, having excellent environmental durability. The target contains zinc oxide as a predominant component, and both titanium (Ti) and gallium (Ga) in amounts of 1.1 at. % or more and 4.5 at. % or more, respectively.03-18-2010
20100065425SILVER ALLOY SPUTTERING TARGET AND PROCESS FOR PRODUCING THE SAME - A silver alloy sputtering target is provided which is useful in forming a thin silver-alloy film of a uniform thickness by the sputtering method. When crystal orientation strengths are determined at four arbitrary positions by the X-ray diffraction method, the orientation which exhibits the highest crystal orientation strength (X03-18-2010
20110100809METHOD TO MANUFACTURE AN OXIDE SPUTTER TARGET COMPRISING A FIRST AND SECOND PHASE - The invention relates to a method to manufacture an oxide sputter target. The method comprises the steps of providing a target holder; applying an outer layer of a sputterable material on the target holder by simultaneously spraying at least one oxide and at least one metal. The outer layer of sputterable material comprises a first phase and a second phase. The first phase comprises an oxide of at least a first metal and a second metal; the second phase comprises a metal in its metallic phase. The metal in its metallic phase forms discrete volumes arranged in or between the oxide of the first phase. The outer layer of sputterable material comprises between 0.1 and 20 wt % metal in its metallic phase. The invention further relates to an oxide sputter target.05-05-2011
20110100808CYLINDRICAL SPUTTERING TARGET AND PROCESS FOR PRODUCING THE SAME - Provided is a cylindrical ceramic sputtering target, which significantly reduces the occurrence of a crack, a chip, extraordinary discharge and a nodule.05-05-2011
20110247930Nonmagnetic Material Particle-Dispersed Ferromagnetic Material Sputtering Target - A nonmagnetic material particle-dispersed ferromagnetic material sputtering target comprising a mixture of an alloy containing 5 mol % or more and 20 mol % or less of Cr, 5 mol % or more and 30 mol % or less of Pt, and Co as the remainder thereof, and nonmagnetic material particles, wherein the structure of the target includes a phase (A) in which the nonmagnetic material particles are uniformly micro-dispersed in the alloy, and a spherical alloy phase (B) dispersed in the phase (A) in which the ratio of its volume in the target is 4% or more and 40% or less. Obtained is a nonmagnetic material particle-dispersed ferromagnetic material sputtering target capable of improving the leakage magnetic flux to obtain a stable electrical discharge with a magnetron sputtering device, and which has high density and generates few particles during sputtering.10-13-2011
20090065354SPUTTERING TARGETS COMPRISING A NOVEL MANUFACTURING DESIGN, METHODS OF PRODUCTION AND USES THEREOF - A sputtering target is described herein, which includes: a) a surface material, and b) a core material coupled to the surface material, wherein at least one of the surface material or the core material has less than 100 ppm defect volume. Methods for producing sputtering targets are described that include: a) providing at least one sputtering target material, b) melting the at least one sputtering target material to provide a molten material, c) degassing the molten material, d) pouring the molten material into a target mold. In some embodiments, pouring the molten material into a target mold comprises under-pouring or under-skimming the molten material from the crucible into the target mold. Sputtering targets and related apparatus formed by and utilizing these methods are also described herein. In addition, uses of these sputtering targets are described herein.03-12-2009
20110048936AL-Ni-RARE EARTH ELEMENT ALLOY SPUTTERING TARGET - An Al-base alloy sputtering target consisting Ni and one or more rare earth elements, wherein there are 5.0×1003-03-2011
20110147208SODIUM/MOLYBDENUM METAL ARTICLES AND METHODS FOR MAKING THE SAME - A method for producing a metal article may include: Producing a supply of a composite metal powder by: providing a supply of molybdenum metal powder; providing a supply of a sodium compound; combining the molybdenum metal powder and the sodium compound with a liquid to form a slurry; feeding the slurry into a stream of hot gas; and recovering the composite metal powder; and consolidating the composite metal powder to form the metal article, the metal article comprising a sodium/molybdenum metal matrix. Also disclosed is a metal article produced accordance with this method.06-23-2011
20100243439SPUTTERING TARGET AND METHOD FOR PREPARATION THEREOF - A sputtering target prepared by the butt joining of metal sheets being made of the same material, wherein an intermetallic compound in a joined portion has an average particle diameter of 60% to 130% of the average particle diameter of the intermetallic compound in a non-joined portion is provided. In the sputtering target, the average particle diameter of an intermetallic compound in a joined portion is approximately the same as that of the intermetallic compound in a non-joined portion.09-30-2010
20090127108SPUTTERING TARGET, METHOD FOR PRODUCING SAME, SPUTTERING THIN FILM FORMED BY USING SUCH SPUTTERING TARGET, AND ORGANIC EL DEVICE USING SUCH THIN FILM - Provided is a sputtering target which can give a high water barrier property and a high flexibility to a sputtering film, can keep a high film forming rate certainly in sputtering, and can make damages to an objective substance wherein a film is to be formed as small as possible. In order to realize this, a mixed powder which contains 20 to 80% by weight of a SiO powder, the balance of the powder being made of a TiO05-21-2009
20120241317Sputtering Target Comprising Oxide Phase Dispersed in Co or Co Alloy Phase, Magnetic Thin Film Made of Co or Co Alloy Phase and Oxide Phase, and Magnetic Recording Medium Using the Said Thin Film - A sputtering target comprising an oxide phase is dispersed in Co or a Co alloy phase, wherein the sputtering target is configured from a metal matrix phase containing Co, and a phase containing SiO09-27-2012
20120241316SPUTTERING TARGET OF MAGNETIC MATERIAL - A magnetic sputtering target which contains B and is obtained by a melting and casting method, wherein the B content is 10 at % or more and 50 at % or less, and the remainder is one or more elements selected from Co, Fe, and Ni. Based on the method of the present invention, the sputtering target, in which gaseous impurities are few, there are no cracks and fractures, and segregation of its main constituent elements is minimal, is obtained. Consequently, when sputtered with a magnetron sputtering device comprising a DC power supply, this sputtering target yields a significant effect of being able to inhibit the generation of particles during sputtering, and improve the production yield upon forming thin films.09-27-2012
20080210555HIGH DENSITY CERAMIC AND CERMET SPUTTERING TARGETS BY MICROWAVE SINTERING - A method of manufacturing sputtering targets from powder materials, comprising steps of: providing at least one raw powder material; forming the at least one raw powder material into a green body with density greater than about 40 % of theoretical maximum density; treating the green body with microwaves to form a sintered body with density greater than about 97% of theoretical maximum density; and forming a sputtering target from the sintered body. The methodology is especially useful in the fabrication of targets comprising dielectric and cermet materials.09-04-2008
20100320085Sputtering Target for Producing Metallic Glass Membrane and Manufacturing Method Thereof - A sputtering target for producing a metallic glass membrane characterized in comprising a structure obtained by sintering atomized powder having a composition of a ternary compound system or greater with at least one or more metal elements selected from Pd, Zr, Fe, Co, Cu and Ni as its main component (component of greatest atomic %), and being an average grain size of 50 μm or less. The prepared metallic glass membrane can be used as a substitute for conventional high-cost bulk metallic glass obtained by quenching of molten metal. This sputtering target for producing the metallic glass membrane is also free from problems such as defects in the metallic glass membrane and unevenness of composition, has a uniform structure, can be produced efficiently and at low cost, and does not generate many nodules or particles. Further provided is a method for manufacturing such a sputtering target for forming the metallic glass membrane.12-23-2010
20110114482Oxide Sintered Compact, Sputtering Target Composed of the Sintered Compact, and Method of Producing the Sintered Compact and the Sintered Compact Sputtering Target - An oxide sintered compact composed of a composite oxide of lanthanum and hafnium, wherein the amount of hafnium contained in the sintered compact is equivalent or more relative to the lanthanum. A method of producing an oxide sintered compact of lanthanum and hafnium, wherein La05-19-2011
20110114481Lanthanum Oxide-based Sintered Compact, Sputtering Target Composed of said Sintered Compact, Method of Producing Lanthanum Oxide-based Sintered Compact, and Method of Producing Sputtering Target based on said Production Method - A lanthanum oxide-based sintered compact having lanthanum oxide as a basic component, wherein the sintered compact contains one or more of titanium oxide, zirconium oxide and hafnium oxide with the remainder being lanthanum oxide and unavoidable impurities. A method of producing a lanthanum oxide-based sintered compact, wherein La05-19-2011
20110132757Sputtering Target with Few Surface Defects, and Surface Processing Method Thereof - A sputtering target and surface processing method is provided. Intermetallic compounds, oxides, carbides, carbonitrides and other substances without ductility exist in the target surface in a highly ductile matrix phase at a volume ratio of 1 to 50%. The target surface is preliminarily subjected to primary processing of cutting work, and then subsequently subjected to finish processing via polishing. The sputtering target subject to this surface processing has an improved target surface with numerous substances without ductility and prevents or suppresses the generation of nodules and particles upon sputtering.06-09-2011
20090194414MODIFIED SPUTTERING TARGET AND DEPOSITION COMPONENTS, METHODS OF PRODUCTION AND USES THEREOF - Deposition apparatus are described herein that include at least one coil, at least one coil set, at least one coil-related apparatus, at least one target-related apparatus or a combination thereof, wherein the at least one coil, at least one coil set, at least one coil-related apparatus, at least one target-related apparatus or a combination thereof comprises a surface, and wherein at least part of the surface comprises a regular depth pattern. Methods of producing a coil, coil set or a coil-related apparatus, at least one target-related apparatus are also disclosed herein that comprise: providing at least one coil, at least one coil set, at least one coil-related apparatus, at least one target-related apparatus or a combination thereof, wherein the at least one coil, at least one coil set, at least one coil-related apparatus, at least one target-related apparatus or a combination thereof comprises a surface, providing a patterning tool; and utilizing the patterning tool to create a regular depth pattern in at least part of the surface.08-06-2009
20090308740CoCrPt Base Sputtering Target and Production Process for the Same - An object of the present invention is to provide a CoCrPt base sputtering target in which high chromium-containing particles containing a chromium atom at a high concentration unevenly distributed in the above sputtering target are reduced in a size and a production amount to thereby enhance a uniformity of the target and inhibit nodules or acing from being caused and which has the targeted composition ratio.12-17-2009
20110259739Method and System for Large Scale Manufacture of Thin Film Photovoltaic Devices Using Multi-Chamber Configuration - A method for large scale manufacture of photovoltaic devices includes loading a substrate into a load lock station and transferring the substrate in a controlled ambient to a first process station. The method includes using a first physical deposition process in the first process station to cause formation of a first conductor layer overlying the surface region of the substrate. The method includes transferring the substrate to a second process station, and using a second physical deposition process in the second process station to cause formation of a second layer overlying the surface region of the substrate. The method further includes repeating the transferring and processing until all thin film materials of the photovoltaic devices are formed. In an embodiment, the invention also provides a method for large scale manufacture of photovoltaic devices including feed forward control. That is, the method includes in-situ monitoring of the physical, electrical, and optical properties of the thin films. These properties are used to determine and adjust process conditions for subsequent processes.10-27-2011
20110147207Method for Manufacturing of Sputtering Targets Using an Inorganic Polymer - The invention relates to a cathodic sputtering target composition comprising at least a solid lithium-based electrolyte and an inorganic carbon free polymer, and to a method for the manufacturing of cathodic solid sputtering targets using such a composition. The invention also relates to solid sputtering targets obtained by such a method and to their use for the preparation of solid thin films by a sputtering physical vapour deposition process, in particular for the preparation of solid electrolyte thin films inside thin film batteries.06-23-2011
20100025236Sb-Te Alloy Sintered Compact Target and Manufacturing Method Thereof - Provided is an Sb—Te alloy sintered compact target using atomized powder consisting of substantially spherical particles of an Sb—Te alloy, wherein the spherical atomized powder consists of particles that were crushed and flattened, and the flattened particles exhibiting a ratio (flatness ratio) of short axis and long axis of 0.6 or less occupy 50% or more of the overall particles. With this Sb—Te alloy sintered compact target, particles exhibiting a long axis orientation aligned within ±45° in a direction that is parallel to the target surface occupy 60% or more of the overall particles. In addition, the oxygen concentration in this Sb—Te alloy sintered compact target is 1500 wtppm or less. Thus, the Sb—Te alloy sputtering target structure can be uniformalized and refined, generation of cracks in the sintered target can be inhibited, and generation of arcing during sputtering can be inhibited. Further, surface ruggedness caused by sputter erosion can be reduced in order to obtain a high quality Sb—Te alloy sputtering target.02-04-2010
20090026072AL-NI-LA-SI SYSTEM AL-BASED ALLOY SPUTTERING TARGET AND PROCESS FOR PRODUCING THE SAME - The present invention relates to an Al—Ni—La—Si system Al-based alloy sputtering target including Ni, La and Si, in which, when a section from (¼)t to (¾)t (t: thickness) in a cross section vertical to a plane of the sputtering target is observed with a scanning electron microscope at a magnification of 2000 times, (1) a total area of an Al—Ni system intermetallic compound having an average particle diameter of 0.3 μm to 3 μm with respect to a total area of the entire Al—Ni system intermetallic compound is 70% or more in terms of an area fraction, the Al—Ni system intermetallic compound being mainly composed of Al and Ni; and (2) a total area of an Al—Ni—La—Si system intermetallic compound having an average particle diameter of 0.2 μm to 2 μm with respect to a total area of the entire Al—Ni—La—Si system intermetallic compound is 70% or more in terms of an area fraction, the Al—Ni—La—Si system intermetallic compound being mainly composed of Al, Ni, La, and Si.01-29-2009
20120037502Sintered Body for ZnO-Ga2O3-Based Sputtering Target and Method of Producing the Same - [Object] To provide a sintered body for a ZnO—Ga02-16-2012
20090173627Sintered Sputtering Target Made of Refractory Metals - Proposed is a sintered sputtering target containing two or more types of refractory metals. In particular, proposed is a sintered sputtering target of refractory metals that is able to improve the target structure to prevent the dropout of metal particles other than the matrix-forming major component, improve the deposition quality as well as the workability of the target by reducing impurities such as gas components, enhancing the density and eliminating the generation of arcing and particles in sputtering. This sintered sputtering target of refractory metals is composed of one or more types of minor components selected from W, Ta and Hf at less than 50 at % as well as at least one or more major components selected from Ru, Rh and Ir and inevitable impurities as the remainder. The metal structure of the major component comprises a granular minor component metal phase, or an alloy phase or a compound phase of the major and the minor component having an average grain size of 100 μm to 500 μm.07-09-2009
20090211903INDIUM ZINC OXIDE BASED SPUTTERING TARGET, METHOD OF MANUFACTURING THE SAME, AND INDIUM ZINC OXIDE BASED THIN FILM - Disclosed are an indium (In) zinc (Zn) oxide based sputtering target, a method of manufacturing the same, and an In Zn oxide based thin film deposited using the In Zn oxide based sputtering target. The In Zn oxide based sputtering target has a composition of (MO08-27-2009
20120305392 MANUFACTURING METHOD FOR LiCoO2, SINTERED BODY AND SPUTTERING TARGET - Provided is a method for stably manufacturing high-density sintered LiCoO12-06-2012
20120305391MANUFACTURING METHOD FOR LiCoO2 SINTERED BODY AND SPUTTERING TARGET - Disclosed are a manufacturing method for a LiCoO12-06-2012
20120037501Tantalum Sputtering Target - Provided is a tantalum sputtering target containing 1 mass ppm or more and 100 mass ppm or less of molybdenum as an essential component, and having a purity of 99.998% or more excluding molybdenum and gas components. Additionally provided is a tantalum sputtering target according to the above further containing 0 to 100 mass ppm of niobium, excluding 0 mass ppm thereof, and having a purity of 99.998% or more excluding molybdenum, niobium and gas components. Thereby obtained is a high purity tantalum sputtering target that has a uniform and fine structure and which yields stable plasma and superior film evenness, in other words, uniformity.02-16-2012
20090260983Cylindrical Magnetron - A rotatable cylindrical magnetron sputtering device that includes a cathode body defining a magnet receiving chamber and a cylindrical target assembly surrounding the cathode body, wherein the cylindrical target assembly is rotatable around the cathode body. The cylindrical target assembly includes a hollow mandrel and a target portion mounted around and spaced away from the hollow mandrel portion so as to create a space gap between the hollow mandrel and the target portion, wherein the space gap may be greater than 0.002 inch and less than 0.020 inch.10-22-2009
20110068003INDIUM TIN OXIDE TARGET, METHOD FOR MANUFACTURING THE SAME, TRANSPARENT CONDUCTIVE FILM OF INDIUM TIN OXIDE, AND METHOD FOR MANUFACTURING TRANSPARENT CONDUCTIVE FILM OF INDIUM TIN OXIDE - Disclosed are an indium Tin Oxide (ITO) target, a method for manufacturing the same, a transparent conductive film of ITO, and a method for manufacturing the transparent conductive film of ITO. The ITO target includes at least one oxide selected from the group consisting of Sm03-24-2011
20090078570TARGET/BACKING PLATE CONSTRUCTIONS, AND METHODS OF FORMING TARGET/BACKING PLATE CONSTRUCTIONS - Target/backing plate constructions and methods of forming target/backing plate constructions are disclosed herein. The targets and backing plates can be bonded to one another through an appropriate interlayer. The targets can comprise one or more of titanium, tantalum, titanium zirconium, hafnium, niobium, vanadium, tungsten, copper or a combination thereof. The interlayer can comprise one or more of silver, copper, nickel, tin, titanium and indium. Target/backing plate constructions of the present invention can have bond strengths of at least 20 ksi and an average grain size within the target of less than 80 microns.03-26-2009
20120000776SPUTTERING TARGETS INCLUDING EXCESS CADMIUM FOR FORMING A CADMIUM STANNATE LAYER - Methods are generally provided for forming a conductive oxide layer on a substrate. In one particular embodiment, the method can include sputtering a transparent conductive oxide layer (e.g., including cadmium stannate) on a substrate from a target in a sputtering atmosphere comprising cadmium. The transparent conductive oxide layer can be sputtered at a sputtering temperature greater of about 100° C. to about 600° C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device.01-05-2012
20120000775Apparatus for Forming Electronic Material Layer - Disclosed is an apparatus for forming an electronic material layer, in which charged particles damaging the electronic material layer are prevented from arriving at a substrate but processing gas ions maximizing activation of the electronic material layer are accelerated and passed while the electronic material layer is formed on the substrate or the substrate having a functional layer thereon by sputtering, thereby forming the electronic material layer having good electrical/physical characteristics at room temperature.01-05-2012
20120118734Ferromagnetic Material Sputtering Target - A ferromagnetic material sputtering target made of metal having a composition containing 20 mol % or less of Cr, and Co as the remainder thereof, wherein the structure of the target includes a metallic substrate (A), and, in the metallic substrate (A), a spherical phase (B) containing 90 wt % or more of Co in which the difference between the longest diameter and the shortest diameter is 0 to 50%. Provided is a ferromagnetic material sputtering target capable of improving the leakage magnetic flux to obtain a stable electrical discharge with a magnetron sputtering device.05-17-2012
20080223718AI-BASED ALLOY SPUTTERING TARGET AND PROCESS FOR PRODUCING THE SAME - The present invention relates to an Al-based alloy sputtering target, comprising Ni in an amount of 0.05 to 10 atomic percent, wherein the Al-based alloy sputtering target satisfies: (1) that a ratio of a P value to a total area of a sputtering surface is 70% or more, wherein the P value indicates a total of area fractions of <001>±15°, <011>±15°, <111>±15° and <311>±15°; (2) that a ratio of the area fraction of <011>±15° to the P value is 30% or more; and (3) that a ratio of the area fraction of <111>±15° to the P value is 10% or less, when crystallographic orientations <001>, <011>, <111> and <311> in a normal line direction to a sputtering surface of the Al-based alloy sputtering target are observed in accordance with the electron backscatter diffraction pattern method.09-18-2008
20090114535Ruthenium-Alloy Sputtering Target - Provided is a ruthenium alloy sputtering target as a ruthenium alloy sintered compact target obtained by sintering mixed powder of ruthenium powder and metal powder capable of creating oxides easier than ruthenium, wherein purity of the target excluding gas components is 99.95 wt % or higher, said target contains 5 at % to 60 at % of metal capable of creating oxides easier than ruthenium, relative density is 99% or higher, and oxygen content as impurities is 1000 ppm or less. This ruthenium alloy sputtering target is capable of reducing its oxygen content, reducing the generation of arcing and particles during sputtering, increasing the target strength by improving the sintered density, and improving the deposition quality by strictly restricting the amount of B and P impurities in the target in order to prevent the compositional variability of B and P added in minute amounts to the Si semiconductor.05-07-2009
20110094879Tungsten Sintered Sputtering Target - Provided is a tungsten sintered sputtering target, wherein the phosphorus content is 1 wtppm or less and the remainder is other unavoidable impurities and tungsten. The inclusion of phosphorus heavily affects the abnormal grain growth of tungsten and the deterioration in the target strength. In particular, if phosphorus is contained in an amount exceeding 1 ppm, crystal grains subject to abnormal grain growth will exist in the tungsten target. Thus, the object is to prevent the abnormal grain growth of tungsten and improve the product yield of the target by strongly recognizing the phosphorus contained in the tungsten as a harmful impurity and controlling the inclusion thereof to be as low as possible.04-28-2011
20110155570Barrier Film for Semiconductor Wiring, Sintered Compact Sputtering Target and Method of Producing the Sputtering Target - Provided are a barrier film for a semiconductor wiring containing Ni with its remainder being W and unavoidable impurities and having a composition of WxNiy (70≦x≦90, 10≦y≦30 unit: atomic percent), and a sintered compact sputtering target for forming a barrier film for a semiconductor wiring containing Ni with its remainder being W and unavoidable impurities and having a composition of WxNiy (70≦x≦90, 10≦y≦30, unit: atomic percent), and comprising a target structure configured from a W matrix and Ni particles existing therein and in which W is diffused in the Ni particles. The present invention aims to provide a sputtering target that is particularly effective for use in forming a barrier film in which the target itself has the same composition as the barrier film without depending on the nitriding reaction in the sputtering process, which is capable of effectively preventing the reaction of a semiconductor device, which is free from the generation of particles in the sputtering process, and which yields superior characteristics upon forming the barrier film, as well as a method of producing such a target.06-30-2011
20120055788TARGET FOR SPUTTERING - A transparent electroconductive film having a low resistivity is provided. In a film-forming method of the present invention, a transparent electroconductive film is formed on a surface of a substrate by sputtering, in a vacuum atmosphere, a target in which ZnO is a main component and Al03-08-2012
20120012460SODIUM / MOLYBDENUM METAL ARTICLES AND POWDER COMPACTS - A metal article formed by compacting a sodium/molybdenum composite metal powder under sufficient pressure to form a preformed article; placing the preformed article in a sealed container; raising the temperature of the sealed container to a temperature that is lower than a sintering temperature of molybdenum; and subjecting the sealed container to an isostatic pressure for a time sufficient to increase the density of the metal article to at least about 90% of theoretical density.01-19-2012
20120055787Sputtering Target and Method of Processing a Sputtering Target - [Object] To provide a sputtering target allowing component metals to be separated from each other by a simple process and a method of processing the sputtering target.03-08-2012
20100270146METHOD FOR MANUFACTURING CO-BASE SINTERED ALLOY SPUTTERING TARGET FOR FORMATION OF MAGNETIC RECORDING FILM WHICH IS LESS LIKELY TO GENERATE PARTRICLES, AND CO-BASE SINTERED ALLOY SPUTTERING TARGET FOR FORMATION OF MAGNETIC RECORDING FILM - A method for manufacturing a Co-base sintered alloy sputtering target for the formation of a magnetic recording film including providing a Cr—Co alloy powder consisting of 50 to 70 atomic % of Cr and remaining Co, a Pt powder, a non-magnetic oxide powder, and a Co powder, blending and mixing the powders together so as to give the chemical composition consisting of 2 to 15 mol % of a non-magnetic oxide, 3 to 20 mol % of Cr, and 5 to 30 mol % of Pt and a remainder containing Co, and sintering the mixture under pressure. Or alternatively providing a Pt—Cr binary alloy powder consisting of 10 to 90 atomic % of Pt and remaining Cr, a Pt powder, a non-magnetic oxide powder, and a Co powder, blending and mixing the powders so as to give the chemical composition above, and then sintering the mixture under pressure.10-28-2010
20120205242Cu-In-Ga-Se QUATERNARY ALLOY SPUTTERING TARGET - A quaternary alloy sputtering target made of copper (Cu), indium (In), gallium (Ga) and selenium (Se), wherein the Cu—In—Ga—Se sputtering target has a composition that is represented by a composition formula of CuIn08-16-2012
20110089030CIG sputtering target and methods of making and using thereof - A sputtering target includes a copper indium gallium sputtering target material on a backing structure. The sputtering target material has a density of at least 100% or more as defined by the rule of mixtures applied to densities of component elements of the sputtering target material. The sputtering target material has an overall uniform composition.04-21-2011
20090134021Sputtering Target - Provided is a tantalum or a tantalum alloy target capable of shortening the burn-in time and minimizing the fluctuation in the deposition speed throughout the target life, whereby the production efficiency of semiconductors in the sputtering process can be improved and stabilized, and the production cost can be significantly reduced. With tantalum or tantalum-based alloy sputtering target, provided is a sputtering target, wherein FWHM (full width of half maximum) of a {200} crystal plane measured by X-ray diffraction of the sputtered outermost surface is 0.1 to 0.6, or a sputtering target according to claim 05-28-2009
20100288631CERAMIC SPUTTERING TARGET ASSEMBLY AND A METHOD FOR PRODUCING THE SAME - A method for producing a ceramic sputtering target assembly has steps of providing a backing plate and forming a solder layer on a surface of the backing plate; providing a ceramic target and forming an interface layer on a surface of the ceramic target; annealing the ceramic target with the interface layer; and solder-bonding the solder layer of the backing plate and the interface layer of the ceramic target to obtain the ceramic sputtering target assembly. By annealing the interface layer made of chromium or chromium-containing alloy, the interface layer provides excellent adhesive ability to solder-bonding the solder layer and allows the ceramic target and the backing plate to be combined securely.11-18-2010
20100206725SPUTTERING TARGET FOR FORMING ZRO2-IN2O3 BASED PROTECTIVE FILM FOR OPTICAL STORAGE MEDIUM - A sputtering target for forming a ZrO08-19-2010
20100206724Method of Producing Sintered Compact, Sintered Compact, Sputtering Target Formed from the same, and Sputtering Target-Backing Plate Assembly - Provided is a method of producing a sintered compact including the steps of mixing raw material powders respectively composed of a chalcogenide element and a Vb group element or raw material powders of an alloy of two or more elements including a chalcogenide element and a Vb group element, and hot pressing the mixed powder under conditions that satisfy the following formula: P(pressure)≦{Pf/(Tf−T08-19-2010
20090057143FILM-DEPOSITING TARGET AND PREPARATION OF PHASE SHIFT MASK BLANK - A film-depositing target for use in the manufacture of a halftone phase shift mask blank includes a transparent substrate and a translucent film of one or more layers having a controlled phase and transmittance, at least one layer of the translucent film including silicon, molybdenum and zirconium at the same time as constituent elements, and at least two elements, zirconium and molybdenum in a molar ratio Zr/Mo between 0.05 and 5.03-05-2009
20100051453Process for making dense mixed metal Si3N4 targets - A composition and method for fabricating high-density Ta-Al-O, Ta-Si-N, and W-Si-N sputtering targets, having particular usefulness for the sputtering of heater layers for ink jet printers. Compositions in accordance with the invention comprise a metal component, Si03-04-2010
20100012488SPUTTER TARGET ASSEMBLY HAVING A LOW-TEMPERATURE HIGH-STRENGTH BOND - Sputter target assemblies are disclosed, wherein the target and the backing plate are joined together through brazing at low temperatures to produce a superior bond between the target and the backing plate.01-21-2010
20120073964Titanium Target for Sputtering - The object of this invention is to provide a high quality titanium target for sputtering capable of reducing the impurities that cause generation of particles and abnormal discharge, which is free from fractures and cracks during high power sputtering (high rate sputtering), and capable of stabilizing the sputtering properties and effectively suppressing the generation of particles upon deposition.03-29-2012
20120255859GADOLINIUM SPUTTERING TARGET AND PRODUCTION METHOD OF SAID TARGET - An assembly of a gadolinium target and a titanium backing plate, wherein the gadolinium target-titanium backing plate assembly has a solid-phase diffusion-bonded interface at a bonding interface between the gadolinium target and the titanium backing plate. An object of the present invention is to discover a backing plate that is suitable for the gadolinium sputtering target, explore the optimal bonding conditions, improve the deposition rate, stabilize the sputtering process, and prevent the occurrence of warpage and separation of the target material and the backing plate by increasing the bonding strength between the target material and the backing plate, as well as inhibit the generation of particles during sputtering.10-11-2012
20120228131METHOD FOR CONSOLIDATING AND DIFFUSION-BONDING POWDER METALLURGY SPUTTERING TARGET - Methods for manufacturing sputtering target assemblies and assemblies thereof are provided, particularly targets made of powders. Powders are adhered to a backing plate by use of a vacuum hot press, the powder preferably contacted by non-planar surfaces, and is compressed with at least about 95% density and substantially simultaneously diffusion-bonded to the backing plate.09-13-2012
20110303535SPUTTERING TARGETS AND METHODS OF FORMING THE SAME - In various embodiments, sputtering targets incorporate an intermediate plate having a coefficient of thermal expansion (CTE) between a CTE of the backing plate and a CTE of the target material.12-15-2011
20100326823CYLINDRICAL SPUTTERING TARGET - To provide a cylindrical sputtering target, whereby cracking during sputtering can be remarkably reduced.12-30-2010
20110036710Ge-Cr Alloy Sputtering Target - A Ge—Cr alloy sputtering target containing 5 to 50 at % of Cr and having a relative density of 95% or more, and a manufacturing method of such a Ge—Cr alloy sputtering target wherein Cr powder having a minus sieve of 75 μm or less, and Ge powder having a minus sieve of 250 μm or less and having a BET specific surface area of 0.4 m02-17-2011
20100170785HIGH-STRENGTH SPUTTERING TARGET FOR FORMING PROTECTIVE FILM FOR OPTICAL RECORDING MEDIUM - A high-strength sputtering target for forming a protective film for an optical recording medium, obtained by sintering a mixed powder containing, in mol %, 10 to 70% of a zirconium oxide or hafnium oxide and 50% or less (over 0%) of silicon dioxide, and 0.1 to 8.4% of yttrium oxide as necessary, and the remainder containing aluminum oxide, lanthanum oxide, or indium oxide and inevitable impurities, wherein a complex oxide phase of Al07-08-2010
20120267243SYSTEMS AND METHODS FOR A TARGET AND BACKING PLATE ASSEMBLY - A target and backing plate assembly and method of making the same. The target and backing plate assembly provides a mechanical interlock between the target and backing plate in addition to diffusion bonding between dissimilar materials comprising the target and backing plate. An interlayer may also be used between the target and backing plate. A plurality of ridges, or other salient surface features on one of the target and backing plate are joined to corresponding members or channels on the other of the target and backing plate. The dissimilar materials of the target and backing plate fill negative angled cavities formed by the plurality of ridges and corresponding channels or members of the target and backing plate to accommodate the diffusion bonded dissimilar materials. A target and backing plate assembly with increased strength results.10-25-2012
20120318669SPUTTERING TARGET-BACKING PLATE ASSEMBLY - Provided is a sputtering target-backing plate assembly where a raw material powder prepared so as to have the composition of a magnetic material sputtering target is filled in a die together with a backing plate and hot-pressed, thereby being bonded to the backing plate simultaneously with sintering of the magnetic material target powder.12-20-2012
20120325655A1-BASED ALLOY SPUTTERING TARGET - The present invention provides a technique capable of suppressing generation of splash even at high-speed deposition by an Al-based alloy sputtering target containing Ni and a rare earth element, wherein when crystallographic orientations <001>, <011>, <111>, <012> and <112> in a normal direction of each sputtering surface at a surface part of the Al-based alloy sputtering target, a ¼×t (t: thickness of the Al-based alloy sputtering target) part thereof and a ½×t part thereof are observed by an electron backscatter diffraction pattern method, the Al-based alloy sputtering target satisfies the requirement (1) that, when a total of area fractions of the <001>±15°, <011>±15° and <112>±15° is defined as R (as for Rat each part, the R at the surface part is defined as R12-27-2012
20120279857Sb-Te-Based Alloy Sintered Compact Sputtering Target - Provided is an Sb—Te-based alloy sintered compact sputtering target having Sb and Te as its main component and which contains 0.1 to 30 at % of carbon or boron and comprises a uniform mixed structure of Sb—Te-based alloy particles and fine carbon (C) or boron (B) particles, wherein the average grain size of the Sb—Te-based alloy particles is 3 μm or less and the standard deviation thereof is less than 1.00, the average grain size of C or B is 0.5 μm or less and the standard deviation thereof is less than 0.20, and, when the average grain size of the Sb—Te-based alloy particles is X and the average grain size of carbon or boron is Y, Y/X is within the range of 0.1 to 0.5. The present invention aims to improve the structure of the Sb—Te-based alloy sputtering target, inhibit the generation of cracks in the sintered target, and prevent the generation of arcing in the sputtering process.11-08-2012
20120138457ENCAPSULATED SPUTTERING TARGET - Embodiments of the invention provide encapsulated sputtering targets for physical vapor deposition. In one embodiment, an encapsulated target contains a target layer containing a first metal or an oxide of the first metal disposed over a backing plate, an adhesion interlayer disposed between the target layer and the backing plate, and an encapsulation layer containing a second metal or an oxide of the second metal disposed over the target layer and an annular sidewall of the backing plate. The target layer is encapsulated by the backing plate and the encapsulation layer and the first metal is different than the second metal. In some examples, the first metal is lanthanum or lithium and the target layer contains metallic lanthanum, lanthanum oxide, or metallic lithium. In other examples, the second metal is titanium or aluminum and the encapsulation layer contains metallic titanium, titanium oxide, metallic aluminum, or aluminum oxide.06-07-2012
20130008784COCRPT-BASED ALLOY SPUTTERING TARGETS WITH COBALT OXIDE AND NON-MAGNETIC OXIDE AND MANUFACTURING METHODS THEREOF - Provided is a CoCrPt-based alloy sputtering target containing cobalt (Co), chromium (Cr), platinum (Pt), cobalt oxide and non-magnetic oxide composition, wherein the lengths of ceramic phases of Cr01-10-2013
20130015061Sputtering Target of Nonmagnetic-Particle-Dispersed Ferromagnetic Material - A sputtering target of nonmagnetic-particle-dispersed ferromagnetic material is provided having a phase (A) such that nonmagnetic particles are dispersed in a ferromagnetic material formed from a Co—Cr alloy containing 5 at % or more and 20 at % or less of Cr and Co as the remainder thereof, and schistose textures (B) with a short side of 30 to 100 μm and a long side of 50 to 300 μm formed from a Co—Cr alloy phase in the phase (A); wherein each of the foregoing nonmagnetic particles has such a shape and size that the particle is smaller than all hypothetical circles with a radius of 1 μm around an arbitrary point within the nonmagnetic particle, or a shape and size with at least two contact points or intersection points between the respective hypothetical circles and the interface of the ferromagnetic material and the nonmagnetic material.01-17-2013
20100170786REFURBISHED SPUTTERING TARGET AND METHOD FOR MAKING THE SAME - A method for making a refurbished sputtering target has steps of providing a spent target with a backside, an eroded side and a rim; mechanically pre-treating the backside of the spent target; applying powder material that has the same composition as the spent target to form a powder-filled layer; and sequentially pre-pressing and sintering the spent target with the powder-filled layer to obtain the refurbished sputtering target. Therefore, a percentage of the spent target is reduced by mechanically treating the backside of the spent target, so the refurbished sputtering target has a consistent quality.07-08-2010
20130134037MIXED TARGETS FOR FORMING A CADMIUM DOPED TIN OXIDE BUFFER LAYER IN A THIN FILM PHOTOVOLTAIC DEVICES - Ceramic sputtering targets and mixed metal targets are generally provided for forming a resistive transparent buffer layer. The ceramic sputtering target can include tin, oxygen, and cadmium (and optionally zinc) in relative amounts such that cadmium is included in an atomic amount that is less than 33% of a total atomic amount of tin and cadmium. For example, the ceramic sputtering target can include tin oxide and cadmium oxide (and optionally zinc oxide) in relative amounts such that cadmium (and optional zinc) is included in an atomic amount that is less than 33% of a total atomic amount of tin and cadmium (and optional zinc). The mixed metal sputtering target can include tin and cadmium such that cadmium is included in an atomic amount that is less than 33% of a total atomic amount of tin and cadmium. The mixed metal sputtering target can further include zinc.05-30-2013
20090173626METHOD FOR FABRICATING TEMPERATURE SENSITIVE AND SPUTTER TARGET ASSEMBLIES USING REACTIVE MULTILAYER JOINING - A method for joining component bodies of material over bonding regions of large dimensions by disposing a plurality of substantially contiguous sheets of reactive composite materials between the bodies and adjacent sheets of fusible material. The contiguous sheets of the reactive composite material are operatively connected by an ignitable bridging material so that an igniting reaction in one sheet will cause an igniting reaction in the other. An application of uniform pressure and an ignition of one or more of the contiguous sheets of reactive composite material causes an exothermic thermal reaction to propagate through the bonding region, fusing any adjacent sheets of fusible material and forming a bond between the component bodies.07-09-2009
20130168240Fe-Pt-Based Ferromagnetic Material Sputtering Target - An Fe—Pt-based ferromagnetic material sputtering target comprising a metal and a metal oxide, wherein the metal has a composition in which Pt is contained in an amount of 5 mol % or more and 60 mol % or less and the remainder is Fe. An object of the present invention is to provide a ferromagnetic material sputtering target, which enables to form a magnetic recording layer composed of a magnetic phase such as an Fe—Pt alloy, and a non-magnetic phase to isolate the magnetic phase, and in which a metal oxide is used as one of the materials for the non-magnetic phase. Provided is a ferromagnetic material sputtering target wherein an inadvertent release of the metal oxide during sputtering and particle generation due to abnormal electrical discharge starting at a void inherently included in the target are suppressed, the adherence between the metal oxide and the matrix alloy is enhanced, and its density is increased.07-04-2013
20130168241Cu-In-Ga-Se QUATERNARY ALLOY SPUTTERING TARGET - A quaternary alloy sputtering target composed of copper (Cu), indium (In), gallium (Ga) and selenium (Se), wherein a composition ratio of the respective elements is represented by a formula of Cu07-04-2013
20130175166MAGNETRON SPUTTERING TARGET AND PROCESS FOR PRODUCING THE SAME - A magnetron sputtering target containing a ferromagnetic metal element includes a magnetic phase containing the ferromagnetic metal element; a plurality of non-magnetic phases containing the ferromagnetic metal element, the plurality of non-magnetic phases containing a different constituent element from each other or containing constituent elements at different ratios from each other; and an oxide phase. Regions of the magnetic phase and the plurality of non-magnetic phases are separated from each other by the oxide phase.07-11-2013
20130175167FERROMAGNETIC SPUTTERING TARGET AND METHOD FOR MANUFACTURING SAME - Provided is a ferromagnetic sputtering target having a composition containing 20 mol % or less of Cr, 5 to 30 mol % of Pt, 5 to 15 mol % of SiO07-11-2013
20130092534Tantalum Sputtering Target - Provided is a tantalum sputtering target, in which 1 mass ppm or more and 50 mass ppm or less of boron is contained as an essential component, and of which the purity excluding boron and gas components is 99.998% or higher. Thereby obtained is a high-purity tantalum sputtering target having a uniform and fine structure and enabling plasma stabilization and achievement of superior film evenness (uniformity).04-18-2013
20130112556SPUTTERING TARGET AND/OR COIL, AND PROCESS FOR PRODUCING SAME - Provided is a sputtering target and/or a coil disposed at the periphery of a plasma-generating region for confining plasma. The target and/or the coil has a surface to be eroded having a hydrogen content of 500 μL/cm05-09-2013
20130112555Sputtering Target of Ferromagnetic Material with Low Generation of Particles - Provided is a sputtering target of ferromagnetic material comprising a metal having a composition containing 20 mol % or less of Cr, and Co as the remainder; wherein the target structure includes a phase (A) which is a basis metal, and metal phases (B) having a component composition different from the peripheral texture within the phase (A), the area ratio occupied by oxides within 1 μm from the most outer periphery of metal phases (B) is 80% or less, and the average grain size of the metal phases (B) is 10 μm or more and 150 μm or less. Provided is a sputtering target of ferromagnetic material capable of inhibiting the generation of particles during sputtering, and improving the pass-through flux to achieve a stable electrical discharge with a magnetron sputtering device.05-09-2013
20110266145Tantalum Sputtering Target - Provided is a tantalum sputtering target containing 1 mass ppm or more and 100 mass ppm or less of niobium as an essential component, and having a purity of 99.999% or more excluding niobium and gas components. Thereby obtained is a high purity tantalum sputtering target comprising a uniform and fine structure and which yields stable plasma and superior film evenness (uniformity).11-03-2011
20130126346CHALCOGENIDE ALLOY SPUTTER TARGETS FOR PHOTOVOLTAIC APPLICATIONS AND METHODS OF MANUFACTURING THE SAME - In one example embodiment, a sputter target structure for depositing semiconducting chalcogenide films is described. The sputter target includes a target body comprising at least one chalcogenide alloy having a chalcogenide alloy purity of at least approximately 2N7, gaseous impurities less than 500 ppm for oxygen (0), nitrogen (N), and hydrogen (H) individually, and a carbon (C) impurity less than 500 ppm. In a particular embodiment, the chalcogens of the at least one chalcogenide alloy comprises at least 20 atomic percent of the target body composition, and the chalcogenide alloy has a density of at least 95% of the theoretical density for the chalcogenide alloy.05-23-2013
20130126345SILICON DEVICE STRUCTURE, AND SPUTTERING TARGET USED FOR FORMING THE SAME - There is provided a silicon device structure, comprising: a P-doped n05-23-2013
20130126344IGZO NANOPARTICLE AND MANUFACTURING METHOD AND USE THEREOF - The present disclosure provides an IGZO nanoparticle, including an InGaZnO05-23-2013
20130140175OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME - A field effect transistor including a semiconductor layer including a composite oxide which contains In, Zn, and one or more elements X selected from the group consisting of Zr, Hf, Ge, Si, Ti, Mn, W, Mo, V, Cu, Ni, Co, Fe, Cr, Nb, Al, B, Sc, Y and lanthanoids in the following atomic ratios (1) to (3):06-06-2013
20080197017Target/Backing Plate Constructions, and Methods of Forming Them - The Invention includes target/backing plate constructions and methods of forming target/backing plate constructions. The targets and backing plates can be bonded to one another through an appropriate interlayer. The targets can comprise one or more of aluminum, copper, tantalum and titanium. The interlayer can comprise one or more of silver, copper, nickel, tin, titanium and indium. Target/backing plate constructions of the present invention can have bond strengths of at least 20 ksi and an average grain size within the target of less than 80 microns.08-21-2008
20130146452FIELD EFFECT TRANSISTOR USING OXIDE SEMICONDUCTOR AND METHOD FOR MANUFACTURING THE SAME - A field effect transistor which includes, on a substrate, at least a semiconductor layer, a passivation layer for the semiconductor layer, a source electrode, a drain electrode, a gate insulating film and a gate electrode, the source electrode and the drain electrode being connected through the semiconductor layer, the gate insulating film being present between the gate electrode and the semiconductor layer, the passivation layer being at least on one surface side of the semiconductor layer, and the semiconductor layer including a composite oxide which comprises In (indium), Zn (zinc) and Ga (gallium) in the following atomic ratios (1) to (3):06-13-2013
20130140174Glass Substrate Film Sputtering Target and Preparing Method Thereof - A preparing method of a glass substrate film sputtering target is disclosed, which comprises the following steps of: weighing an alloy material for forming the glass substrate film sputtering target; adding the alloy material weighed into a plasma pressure compaction sintering cavity and sintering the alloy material to obtain a sintered target, wherein the sintering temperature is 500° C.˜1600° C. and the sintering time is 5˜20 minutes; and post-processing the sintered target. A glass substrate film sputtering target prepared by the preparing method is further disclosed. Because the plasma pressure compaction for quick sintering is adopted for the glass substrate film sputtering target and the preparing method thereof of the present disclosure, quality of the target can be improved and the time necessary for preparing the target can be shortened.06-06-2013
20100307914Cu-Ga ALLOY, SPUTTERING TARGET, Cu-Ga ALLOY PRODUCTION METHOD, AND SPUTTERING TARGET PRODUCTION METHOD - A Cu—Ga alloy includes a plurality of phases, and not less than 40 wt % and not more than 60 wt % of gallium (Ga) and a balance consisting of copper and an inevitable impurity. The plurality of phases include a segregation phase including not less than 80 wt % of gallium (Ga), and a rate of a volume of the segregation phase to a total volume of the Cu—Ga alloy is not more than 1%. The plurality of phases include particles including not less than 40 wt % and not more than 60 wt % of gallium (Ga), the particles include a diameter of not less than 0.1 μm and not more than 30 μm, and a rate of a volume of the particles to the total volume of the Cu—Ga alloy is not less than 90%.12-09-2010
20120273348Indium Target And Manufacturing Method Thereof - The present invention provides a novel indium target and manufacturing method thereof, where an abnormal electrical discharge at sputtering and a generation of particles in a produced film can be inhibited excellently. The indium target contains not more than 1500 number/gram of inclusions having a particle size of 0.5 μm to 20 μm.11-01-2012
20130153414Indium Target And Method For Manufacturing Same - Provided are an indium target capable of achieving a high deposition rate while suppressing the occurrence of arcing, and a method for manufacturing the indium target. In the process of solidification at the time of melting and casting an indium ingot, ultrasonic vibration is applied to molten indium liquid which is at least in a state immediately before solidification, and thereby, coarsening of the grain size is suppressed. Thus, an indium target is provided An indium target in which an overall average grain size is 10 mm or less; for the grains observed from a cross-section parallel to a thickness direction, a ratio of an average grain size in a direction parallel to the thickness direction with respect to an average grain size in a direction perpendicular to the thickness direction is 0.7 to 1.1; and pores with a pore size of 50 μm or greater exists at a density of 1 pore/cm06-20-2013
20110233057HOMOGENEOUS TITANIUM TUNGSTEN ALLOYS PRODUCED BY POWDER METAL TECHNOLOGY - The present disclosure is related to homogeneous alloys comprising titanium and 9% to less than 20% by weight of tungsten, wherein the alloy has a yield strength of at least 120,000 psi and ductility of least 20% elongation; and with further alloying an ultimate tensile strength of at least 200,000 psi and useful ductility of at least 2% elongation; and with the addition of ceramic particulate reinforcements can exhibit an ultimate tensile strength of at least 180,000 psi. Products and metal matrix composites comprising such homogeneous alloys are also disclosed. The metal matrix composites further comprise a discontinuous reinforcement chosen from TiC, TiB09-29-2011
20100314247Filtered cathodic arc device and carbon protective film deposited using the device - A filtered cathodic arc device includes a plasma generating module which generates plasma using an arc discharge which has a cathode target as a deposition raw material; a deposition processing chamber in which a deposition receiving substrate is placed; a curved magnetic field duct that is placed between the plasma generating module and the deposition processing chamber, and that guides plasma generated by the plasma generating module to the deposition processing chamber with a magnetic field; a wool medium formed of a nonmagnetic metal fiber which covers the interior wall of the magnetic field duct; and a bias power source for the wool medium. The device balances reduction of particulate particles and a high deposition rate.12-16-2010
20090139861MAGNETIC SHUNTS IN TUBULAR TARGETS - A sputter target has a carrier body and a target material arranged on the carrier body, wherein the carrier body has a rear surface facing away from the target material and the target material has a front surface facing away from the carrier body. A ferromagnetic material is arranged between the front surface and the rear surface.06-04-2009
20110284372Cu-Ga ALLOY MATERIAL, SPUTTERING TARGET, METHOD OF MAKING Cu-Ga ALLOY MATERIAL, Cu-In-Ga-Se ALLOY FILM, AND METHOD OF MAKING Cu-In-Ga-Se ALLOY FILM - According to one embodiment of the invention, a Cu—Ga alloy material has an average composition consisting of not less than 32% and not more than 53% by mass of gallium (Ga) as well as the balance consisting of copper (Cu) and an inevitable impurity. In the Cu—Ga alloy material, a region containing less than 47% by mass of copper accounts for 2% or less by volume of the whole Cu—Ga alloy material.11-24-2011
20110308940Lanthanum Target for Sputtering - Provided are a lanthanum target for sputtering which has a recrystallized structure with an average crystal grain size of 100 μm or less and has no spotty macro patterns on the surface; and a method of producing a lanthanum target for sputtering, wherein lanthanum is melted and cast to produce an ingot, the ingot is subject to knead forging at a temperature of 300 to 500° C. and subsequently subject to hot upset forging to form the shape into a rough target shape, and this is additionally subject to machining to obtain a target. This invention aims to offer technology for efficiently and stably providing a lanthanum target for sputtering which has no spotty macro patterns on the surface, and a method of producing the same.12-22-2011
20130186753Titanium Target for Sputtering - Provided is a titanium target for sputtering having a Shore hardness Hs of 20 or more and a basal plane orientation ratio of 70% or less. In the titanium target for sputtering, the purity of titanium is 99.995 mass % or more, excluding gas components. It is an object of the present invention to provide a high-quality titanium target for sputtering, in which impurities are reduced, and which can prevent occurrence of cracking or breaking in high-power sputtering (high-rate sputtering), stabilize sputtering characteristics, and effectively suppress occurrence of particles during formation of a film.07-25-2013
20130192986METHOD FOR PRODUCING CU-GA ALLOY POWDER, CU-GA ALLOY POWDER, METHOD FOR PRODUCING CU-GA ALLOY SPUTTERING TARGET, AND CU-GA ALLOY SPUTTERING TARGET - Provided are a method for producing a Cu—Ga alloy powder, by which a high quality Cu—Ga alloy powder to be produced readily; a Cu—Ga alloy powder; a method for producing a Cu—Ga alloy sputtering target; and a Cu—Ga alloy sputtering target. Specifically, a Cu—Ga alloy powder is produced by stirring a mixed powder containing a Cu powder and a Ga in a mass ratio of 85:15 to 55:45 at a temperature of 30 to 700° C. in an inert atmosphere thereby accomplishing alloying. Also a Cu—Ga alloy sputtering target is produced by molding the Cu—Ga alloy powder followed by sintering.08-01-2013
20120031756Tantalum Sputtering Target - Provided is a tantalum sputtering target containing 1 mass ppm or more and 100 mass ppm or less of tungsten as an essential component, and having a purity of 99.998% or more excluding tungsten and gas components. Additionally provided is a tantalum sputtering target according to according to the above further containing 0 to 100 mass ppm of molybdenum and/or niobium, excluding 0 mass ppm thereof, wherein the total content of tungsten, molybdenum, and niobium is 1 mass ppm or more and 150 mass ppm or less, and wherein the purity is 99.998% or more excluding tungsten, molybdenum, niobium and gas components. Thereby obtained is a high purity tantalum sputtering target comprising a uniform and fine structure and which enables stable plasma and yields superior film evenness (uniformity).02-09-2012
20120061238SPUTTERING CATHODE HAVING A NON-BONDED SEMICONDUCTING TARGET - A sputtering cathode is generally provided. The sputtering cathode can include a semiconducting target (e.g., a cadmium sulfide target, a cadmium tin oxide target, etc.) defining a sputtering surface and a back surface opposite to the sputtering surface. A backing plate can be positioned facing the back surface of the target and non-bonded to the back surface of the target. A non-bonding attachment mechanism can removably hold the target within the sputtering cathode such that the back surface is facing the backing plate during sputtering.03-15-2012
20130098759Tantalum Sputtering Target - Provided is a tantalum sputtering target, in which 30 mass ppm or more and 100 mass ppm or less of oxygen is contained as an essential component, and of which purity excluding oxygen and gas components is 99.998% or higher. Additionally provided is a tantalum sputtering target, wherein an average crystal grain size is 120 μm or less and variation in the crystal grain size is ±20% m or less. Thereby obtained is a high-purity tantalum sputtering target having a uniform and fine structure and enabling plasma stabilization and achievement of superior film evenness (uniformity).04-25-2013
20120085641Sputtering Target Having Amorphous and Microcrystalline Portions and Method of Producing Same - A sputtering target is provided which ensures the production of unvaryingly homogenous layers of the sputtering material during the lifespan of the sputtering target. The sputtering target includes a mixture of oxides of indium, zinc, and gallium, the mixture containing at least one ternary mixed oxide of indium, zinc, and gallium and at least one amorphous phase. The portion of ternary mixed oxides of indium, zinc, and gallium is at least 50 weight percent, relative to the total weight of the mixture, and the portion of amorphous phase is at least 20 weight percent, relative to the total weight of the mixture.04-12-2012
20130206592Ferromagnetic Sputtering Target - Provided is a ferromagnetic sputtering target having a metal composition comprising 20 mol % or less of Cr, 5 mol % or more of Pt, and the balance of Co, wherein the target includes a metal base (A) and two different phases (B) and (C) in the metal base (A), the phase (B) being a Co—Ru alloy phase containing 30 mol % or more of Ru, and the phase (C) being a metal or alloy phase primarily composed of Co or a Co alloy. The present invention improves the leakage magnetic flux to provide a ferromagnetic sputtering target that can perform stable discharge with a magnetron sputtering device.08-15-2013
20130206590Manufacture of High Density Indium Tin Oxide (ITO) Sputtering Target - A process for manufacturing indium tin oxide (ITO) sputtering targets is provided. The process includes: precipitating indium and tin hydroxides, calcining the hydroxides to produce granulated ITO powder, preparing an aqueous slurry of the ITO powder with additives such as special sintering aids, dispersing agent and binders, milling the slurry to obtain a slip, preparing compacted ITO green bodies by casting the slip using porous molds or drying the slip to yield granulated ITO powder and cold isostatic pressing the powder, and sintering the green body to yield ITO target of high density greater than 99% of theoretical.08-15-2013
20130206593FERROMAGNETIC MATERIAL SPUTTERING TARGET - Provided is a ferromagnetic material sputtering target comprising a metal having a composition that Cr is contained in an amount of 20 mol % or less, Ru is contained in an amount of 0.5 mol % or more and 30 mol % or less, and the remainder is Co, wherein the target has a structure including a base metal (A) and, within the base metal (A), a Co—Ru alloy phase (B) containing 35 mol % or more of Ru. The present invention provides a ferromagnetic material sputtering target that can improve leakage magnetic flux to allow stable discharge with a magnetron sputtering apparatus.08-15-2013
20130206591Sputtering Target for Magnetic Recording Film and Method for Producing Same - Provided is a sputtering target for a magnetic recording film containing SiO08-15-2013

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