Class / Patent application number | Description | Number of patent applications / Date published |
204192340 | Ion beam etching (e.g., ion milling, etc.) | 58 |
20080202920 | Ion Milling system and ion milling method - In an ion milling system and an ion milling method for making unnecessary the effort of resetting a sample in a sample stage mechanism whenever a machining region is changed, the system includes an ion gun that generates an ion beam with which a sample is to be irradiated, a sample chamber within which the sample to be subjected to irradiation processing by the ion beam is put, an exhaust that evacuates air in order to maintain vacuum in the sample chamber, a gas injection mechanism that injects ion-generating gas, and a sample stage mechanism in which the sample is placed and which rotates with the sample set thereon. The sample stage mechanism has a rotary table that rotates with the sample set thereon, a rotating mechanism that drives the rotary table, an eccentric mechanism capable of eccentrically adjusting a positional relationship between a rotation center axis of the rotary table and a centerline of the ion beam, and a sample position adjusting mechanism capable of eccentrically adjusting a positional relationship between a centerline of the sample set on the sample stage and the rotation center axis of the rotary table. | 08-28-2008 |
20080289954 | Method of Manufacturing Sample for Atom Probe Analysis by FIB and Focused Ion Beam Apparatus Implementing the Same - A method of manufacturing a sample for an atom probe analysis of the invention is made one going through a step of manufacturing a concave/convex structure in both of a base needle and a transplantation sample piece by an etching working of an FIB, a step of jointing mutual members, and a step of bonding such that the concave/convex structure becomes a mesh form by a deposition working of the FIB. | 11-27-2008 |
20090255805 | Removing Method of Hard Coating Film - A hard coating film is efficiently etched by a krypton ion beam of comparatively large mass, and then it is slowly etched by an argon ion beam of small mass. As a result, a coating film removing operation can be performed in a short time with suppressing an influence of the coating film removal on a tool base material (changes in shape and dimension) to the minimum. Since both krypton and argon are an inert gas, even upon the surface of the tool base material being exposed, the surface weakness by chemical erosion can be completely prevented. As a result, even when a hard coating film coated working tool is reproduced by re-coating the tool base material with the hard coating film, the hard coating film is coated by excellent adhesion strength. | 10-15-2009 |
20090260977 | METHOD FOR MANUFACTURING WORKPIECES WITH ION-ETCHED SURFACE - Planetary carriers ( | 10-22-2009 |
20100078316 | METHOD OF FORMING MASK FOR DRY ETCHING AND MANUFACTURING METHOD OF MAGNETIC HEAD USING THE SAME METHOD - The present invention relates to a method for forming a dry etching mask. A plurality of aluminum oxide films are sequentially sputtered on a material to be dry etched in such a manner that etching rate with respect to reactive ion etching increases toward a lower layer. On a laminated film of the plurality of aluminum oxide films, there is formed a first mask that has etching resistance with respect to the reactive ion etching. Reactive ion etching is performed from above the first mask to form a second mask of the laminated film. | 04-01-2010 |
20100084262 | MANUFACTURING METHOD OF PERPENDICULAR MAGNETIC RECORDING HEAD - The present invention relates to a method for manufacturing a perpendicular recording magnetic head. The method for manufacturing a perpendicular recording magnetic head according to the present invention includes first to third steps. At the first step, a main magnetic pole layer is formed on a foundation layer. At the second step, a main magnetic pole forming mask whose recording-medium-facing surface is of an inverted trapezoidal shape is formed on the main magnetic pole layer. At the third step, a main magnetic pole whose recording-medium-facing surface is of an inverted trapezoidal shape is formed by performing ion milling on a laminated structure including the foundation layer and the main magnetic pole layer from a direction which makes a given angle with a lamination direction according to a bevel angle of the inverted trapezoidal shape. | 04-08-2010 |
20100096256 | PATTERNING OF MAGNETIC THIN FILM USING ENERGIZED IONS AND THERMAL EXCITATION - A method for patterning a magnetic thin film on a substrate includes: providing a pattern about the magnetic thin film, with selective regions of the pattern permitting penetration of energized ions of one or more elements. Energized ions are generated with sufficient energy to penetrate selective regions and a portion of the magnetic thin film adjacent the selective regions. The substrate is placed to receive the energized ions. The portion of the magnetic thin film is subjected to thermal excitation. The portions of the magnetic thin film are rendered to exhibit a magnetic property different than selective other portions. A method for patterning a magnetic media with a magnetic thin film on both sides of the media is also disclosed. | 04-22-2010 |
20100122901 | Vapor-Barrier Vacuum Isolation System - A system includes a collimated beam source within a vacuum chamber, a condensable barrier gas, cooling material, a pump, and isolation chambers cooled by the cooling material to condense the barrier gas. Pressure levels of each isolation chamber are substantially greater than in the vacuum chamber. Coaxially-aligned orifices connect a working chamber, the isolation chambers, and the vacuum chamber. The pump evacuates uncondensed barrier gas. The barrier gas blocks entry of atmospheric vapor from the working chamber into the isolation chambers, and undergoes supersonic flow expansion upon entering each isolation chamber. A method includes connecting the isolation chambers to the vacuum chamber, directing vapor to a boundary with the working chamber, and supersonically expanding the vapor as it enters the isolation chambers via the orifices. The vapor condenses in each isolation chamber using the cooling material, and uncondensed vapor is pumped out of the isolation chambers via the pump. | 05-20-2010 |
20100155231 | Method and Apparatus for Manufacturing Magnetoresistive Devices - Disclosed are method and apparatus for manufacturing a magnetoresistive device which are suitable for manufacturing a high-quality magnetoresistive device by reducing damages caused during the processing of a multilayer magnetic film as a component of the magnetoresistive device, thereby preventing deterioration of magnetic characteristics due to such damages. Specifically disclosed is a method for manufacturing a magnetoresistive device, which includes processing a multilayer magnetic film by performing a reactive ion etching on a substrate which is provided with the multilayer magnetic film as a component of the magnetoresistive device. This method for manufacturing a magnetoresistive device includes irradiating the multilayer magnetic film with an ion beam after the reactive ion etching. | 06-24-2010 |
20100155232 | METHOD FOR MANUFACTURING A MAGNETIC WRITE HEAD HAVING A WRITE POLE TRAILING EDGE TAPER - A method for manufacturing a magnetic write head for perpendicular magnetic data recording, having a write pole with a tapered trailing edge for improved write field at small bit lengths. The trailing edge taper is formed by a deposition process that can be performed after the write pole flare point has already been formed, and especially after a wrap around shield side gap has been formed. This advantageously allows the distance between the write pole flare point and the trailing edge taper to be closely controlled. | 06-24-2010 |
20100264019 | METHOD AND APPARATUS FOR MANUFACTURING MAGNETIC RECORDING MEDIA - According to one embodiment, a method for manufacturing a magnetic recording medium includes forming patterns having protrusions and recesses of a ferromagnetic material onto a recording track section and a servo section on a substrate, forming a flattening film, a top surface of which is higher than that of the protrusion of the ferromagnetic material, onto the ferromagnetic material, and performing ion beam etching onto the flattening film up to a top surface of the protrusion of the ferromagnetic material, and determining an end point of flattening etching on the basis of a change in the total number of incident particles by means of an ion counter installed so as to be at an angle θ with respect to a perpendicular direction to the substrate in accordance with a material of the flattening film. | 10-21-2010 |
20100300874 | PATTERNING MAGNETIC RECORDING MEDIA WITH ION IMPLANTATION UTILIZING A COMBINATION OF HEAVY AND LIGHT ION SPECIES - A patterned magnetic layer is formed by bombardment of a masked high Mrt magnetic layer with a combination of both heavy ion species and light ion species. The method can be implemented as sequential process steps or in a single process step with the proper heavy/light ion species mixture. Advantageously, the combined heavy/light ion species bombardment method results in a patterned magnetic layer having high topographical uniformity across its surface. | 12-02-2010 |
20100326819 | METHOD FOR MAKING A PATTERNED PERPENDICULAR MAGNETIC RECORDING DISK - A method for making a patterned-media magnetic recording disk uses nano-imprint lithography (NIL) for patterning a resist layer over the magnetic recording layer. A hard mask layer is located above the magnetic recording layer and an etch stop layer is located above the hard mask layer and below the resist layer. Residual resist material in the recesses of the patterned resist layer is removed by reactive ion etching (RIE) to expose the underlying etch stop layer. The etch stop material in the recesses is then removed by RIE to expose regions of the hard mask layer. A reactive ion milling (RIM) process removes the exposed hard mask material. The RIM process causes no undercutting of the unexposed hard mask material, which allows the very small critical dimensions of the patterned-media disk to be reliably achieved when ion milling is subsequently performed through the hard mask that has been patterned by the RIM process. | 12-30-2010 |
20110031111 | SUBSTRATE PROCESSING APPARATUS, POSITIONING METHOD AND FOCUS RING INSTALLATION METHOD - Positioning accuracy of a component in a substrate processing apparatus can be improved higher than a conventional case without increasing the insertion accuracy of positioning pins into positioning holes. Provided is a substrate processing apparatus including a mounting table | 02-10-2011 |
20110048929 | FIB Process for Selective and Clean Etching of Copper - Etch assisting agents for focused ion beam (FIB) etching of copper for circuit editing of integrated circuits both prevent loss of adjacent dielectric due to sputtering by the ion beam, and render sputtered re-deposited copper on adjacent surfaces non-conductive to avoid electrical short circuits. The agents comprise hydrazine and hydrazine derivatives compounds having an N—N (N being Nitrogen) bonding in their molecules, and boiling points between about 70° and 200° C. Preferred agents are either Hydrazine monohydrate or Nitrosodimethylamine, alone or in combination with Nitrogen Tetroxide, and are effective for etching copper in high aspect ratio (deep) holes. | 03-03-2011 |
20110048930 | SELECTIVE NANOTUBE GROWTH INSIDE VIAS USING AN ION BEAM - A method of selectively growing one or more carbon nano-tubes includes forming an insulating layer on a substrate, the insulating layer having a top surface; forming a via in the insulating layer; forming an active metal layer over the insulating layer, including sidewall and bottom surfaces of the via; and removing the active metal layer at portions of the top surface with an ion beam to enable the selective growth of one or more carbon nano-tubes inside the via. | 03-03-2011 |
20110048931 | FIB Process for Selective and Clean Etching of Copper - Etch assisting agents for focused ion beam (FIB) etching of copper for circuit editing of integrated circuits both prevent loss of adjacent dielectric due to sputtering by the ion beam, and render sputtered re-deposited copper on adjacent surfaces non-conductive to avoid electrical short circuits. The agents comprise hydrazine and hydrazine derivatives having an N—N(N being Nitrogen) bonding in their molecules and boiling points between about 70° and 220° C., and NitrosAmine derivatives saturated with two hydrocarbon groups selected from Methyl, Ethyl, Propyl and Butyl. Preferred agents are Hydrazine monohydrate (HMH), HydroxyEthylHydrazine (HEH), NDMA, NMEA, NDEA, NMPA, NEPA, NDPA, NMBA or NEBA, alone or in combination with Nitrogen Tetroxide. The agents are effective for etching copper in high aspect ratio (deep) holes. | 03-03-2011 |
20110114476 | Method and apparatus for specimen fabrication - A sample fabricating method of irradiating a sample with a focused ion beam at an incident angle less than 90 degrees with respect to the surface of the sample, eliminating the peripheral area of a micro sample as a target, turning a specimen stage around a line segment perpendicular to the sample surface as a turn axis, irradiating the sample with the focused ion beam while the incident angle on the sample surface is fixed, and separating the micro sample or preparing the micro sample to be separated. A sample fabricating apparatus for forming a sample section in a sample held on a specimen stage by scanning and deflecting an ion beam, wherein an angle between an optical axis of the ion beam and the surface of the specimen stage is fixed and formation of a sample section is controlled by turning the specimen stage. | 05-19-2011 |
20110147200 | Ion Beam Generator, and Substrate Processing Apparatus and Production Method of Electronic Device Using The Ion Beam Generator - An ion beam generator generates plasma in a discharge tank | 06-23-2011 |
20110290639 | METHOD AND APPARATUS FOR PROVIDING BEAMS OF NANODROPLETS FOR HIGH SPUTTERING RATE OF INERT MATERIALS - A method for milling of a workpiece of inert material by nanodroplet beam sputtering includes the steps of providing a liquid; electrohydrodynamically atomizing the liquid to form charged nanodroplets; and directing the atomized charged nanodroplets onto the workpiece to selectively remove material. The method is used for broad-beam milling the workpiece of inert material, for precision micromachining and/or for three dimensionally profiling organic samples via secondary ion mass spectrometry. The liquid is electrosprayed in a cone-jet mode in a vacuum and average nanodroplet diameter, nanodroplet velocity, and molecular energy of the nanodroplets is adjusted by changing liquid flow rate and the acceleration voltage applied to the ionic liquid as it is atomized. Apparatus for performing the method are also included embodiments. | 12-01-2011 |
20120061236 | METHOD FOR MACHINING A SUBSTRATE BY MEANS OF AN ION BEAM, AND ION BEAM DEVICE FOR MACHINING A SUBSTRATE - In a method of machining a substrate by an ion beam, the ion beam is guided by an orifice plate formed at least partly of carbon-containing material. Between the orifice plate and the substrate, an educt that is reactive with carbon is guided such that carbon released from the orifice plate by the ion beam oxidizes. An ion beam device for machining a substrate includes an ion beam source and at least one orifice plate, disposed between the ion beam source and the substrate, for adjusting a cross section of and guiding the ion beam. The orifice plate is formed of carbon-containing material. A delivery unit, for delivering an educt that is reactive with carbon, is disposed such that the educt can be guided between the orifice plate and the substrate, so that carbon released from the orifice plate by the ion beam oxidizes. | 03-15-2012 |
20120145535 | APPARATUS AND METHOD FOR PROCESSING SUBSTRATE USING ION BEAM - A method of processing a substrate in an apparatus including a substrate holder which holds the substrate, an ion source which emits an ion beam, a neutralizer which emits electrons, and a shutter which is arranged between a space in which the ion source and the neutralizer are arranged and a space in which the substrate holder is arranged, and configured to shield the ion beam traveling toward the substrate, includes adjusting an amount of electrons which are emitted by the neutralizer and reach the substrate holder during movement of the shutter. | 06-14-2012 |
20120211356 | FIB Process for Selective and Clean Etching of Copper - Etch assisting agents for focused ion beam (FIB) etching of copper for circuit editing of integrated circuits both prevent loss of adjacent dielectric due to sputtering by the ion beam, and render sputtered re-deposited copper on adjacent surfaces non-conductive to avoid electrical short circuits. The agents are characterized by having an N—N (N being Nitrogen) bonding in their molecules and boiling points between about 70° C. and about 220° C., and include hydrazine and water solutions, hydrazine derivatives, NitrosAmine derivatives saturated with two hydrocarbon groups selected from Methyl, Ethyl, Propyl and Butyl, NitrosAmine related compounds, and Nitrogen Tetroxide. Preferred agents are Hydrazine monohydrate (HMH), HydroxyEthylHydrazine (HEH), CEH, BocMH, BocMEH, NDMA, NDEA, NMEA, NMPA, NEPA, NDPA, NMBA, NEBA, NPYR, NPIP, NMOR and Carmustine, alone or in combination with Nitrogen Tetroxide. The agents are effective for etching copper in high aspect ratio (deep) holes. | 08-23-2012 |
20120217152 | Method for Rapid Switching between a High Current Mode and a Low Current Mode in a Charged Particle Beam System - A method for rapid switching between operating modes with differing beam currents in a charged particle system is disclosed. Many FIB milling applications require precise positioning of a milled pattern within a region of interest (RoI). This may be accomplished by using fiducial marks near the RoI, wherein the FIB is periodically deflected to image these marks during FIB milling. Any drift of the beam relative to the RoI can then be measured and compensated for, enabling more precise positioning of the FIB milling beam. It is often advantageous to use a lower current FIB for imaging since this may enable higher spatial resolution in the image of the marks. For faster FIB milling, a larger beam current is desired. Thus, for optimization of the FIB milling process, a method for rapidly switching between high and low current operating modes is desirable. | 08-30-2012 |
20120222952 | PLASMA IMMERSION ION MILLING APPARATUS AND METHOD - Disclosed is an apparatus and method for low-temperature plasma immersion processing of a variety of workpieces using accelerated ions, wherein low-temperature plasma is distributed around a cylindrical workpiece placed in a chamber, the workpiece is enclosed with a housing including a multi-slot extracting electrode to isolate the workpiece from plasma, and a negative potential sufficient to induce sputtering is applied to the workpiece and the electrode, so that ions from plasma are accelerated within the sheath formed between the extracting electrode and plasma, pass through the slot part of the electrode and bombard the workpiece, thus polishing the surface of the workpiece. This apparatus and method is effective for surface smoothing to ones of nm of large cylindrical substrates particularly substrates for micro or nanopattern transfer. This method includes plasma cleaning, surface activating, surface smoothing, dry etching, deposition, plasma immersion ion implantation and deposition within a single or multi chamber. | 09-06-2012 |
20130008779 | METHOD AND APPARATUS FOR ION BEAM POLISHING - A method for forming a polished facet between an edge and a face of a sample, involves removing a first portion of the sample by directing an ion beam onto the edge adjacent the first portion along an ion beam axis to leave the polished facet. The ion beam axis lies on an ion beam plane oriented at a glancing incident angle, preferably from 1° to 30°, to a sample plane defined by and parallel to the first face. The ion beam is directed to flow from the edge towards the first face. Also disclosed is a sample preparation apparatus comprising a chamber adapted for evacuation with a sample holder adapted to hold a sample comprising a first face bounded by an edge, and an ion gun arranged to direct an ion beam along an ion beam axis towards the sample. The sample holder is configurable to position the sample relative to the ion beam such that a first portion of the sample is removable by the ion beam to leave a polished facet between the edge and the first face of said sample. The sample holder is configured to hold the sample whereby the ion beam axis lies on an ion beam plane oriented at an incident angle from 1° to 30° to a sample plane defined by and parallel to the first face of the sample. | 01-10-2013 |
20130075248 | ETCHING METHOD, ETCHING APPARATUS, AND STORAGE MEDIUM - Art etching method for anisotropically etching a Cu film on a substrate surface includes providing a substrate having a Cu film on a surface thereof in a chamber and supplying an organic compound into the chamber while setting the inside ox the chamber to a vacuum state and irradiating an oxygen gas cluster ion beam to the Cu film. The etching method further includes oxidizing Cu or the Cu film to a copper oxide by oxygen gas cluster ions in the oxygen gas cluster ion beam and anisotropically etching the Cu film by reacting the copper oxide and the organic compound. | 03-28-2013 |
20130105303 | PROCESS CHAMBER FOR ETCHING LOW K AND OTHER DIELECTRIC FILMS | 05-02-2013 |
20130118895 | APPARATUS AND METHOD FOR REACTIVE ION ETCHING - The invention relates to an apparatus for reactive ion etching of a substrate, comprising: a plasma etch zone including an etch gas supply and arranged with a plasma generating structure for igniting a plasma and comprising an electrode structure arranged to accelerate the etch plasma toward a substrate portion to have ions impinge on the surface of the substrate; a passivation zone including a cavity provided with a passivation gas supply; said supply arranged for providing a passivation gas flow from the supply to the cavity; the cavity in use being bounded by the injector head and the substrate surface; and a gas purge structure comprising a gas exhaust arranged between said etch zone and passivation zone; the gas purge structure thus forming a spatial division of the etch and passivation zones. | 05-16-2013 |
20130118896 | METHOD AND SYSTEM FOR ION BEAM DELAYERING OF A SAMPLE AND CONTROL THEREOF - There is provided a method, system and computer program product to delayer a layer of a sample, the layer comprising one or more materials, in an ion beam mill by adjusting one or more operating parameters of the ion beam mill and selectively removing each of the one or more materials at their respective predetermined rates. There is also provided a method and system for obtaining rate of removal of a material from a sample in an ion beam mill. | 05-16-2013 |
20130161185 | REMOVING RESIDUES IN MAGNETIC HEAD FABRICATION - The present invention generally relates to a method of forming a magnetic head while ensuring residues do not negatively impact the magnetic head. In particular, when performing a RIE process to remove DLC, oxygen gas can leave residues that will negatively impact the RIE process performed on the next substrate to enter the chamber. By utilizing CO | 06-27-2013 |
20130248355 | METHOD OF MANUFACTURING MAGNETORESISTIVE ELEMENT - According to one embodiment, a method of manufacturing a magnetoresistive element, the method includes forming a first magnetic layer, forming a tunnel barrier layer on the first magnetic layer, forming a second magnetic layer on the tunnel barrier layer, forming a hard mask layer on the second magnetic layer, and patterning the second magnetic layer, the tunnel barrier layer, and the first magnetic layer, with a cluster ion beam using the hard mask layer as a mask, wherein the cluster ion beam comprises cluster ions, cluster sizes of the cluster ions are distributed, and a peak value of the distribution of the cluster sizes is 2 pieces or more and 1000 pieces or less. | 09-26-2013 |
20130248356 | Low Energy Ion Beam Etch - A carbonaceous material is removed using a low energy focused ion beam in the presence of an etch-assisting gas. Applicant has discovered that when the beam energy of the FIB is lowered, an etch-assisting gas, such as O | 09-26-2013 |
20130248357 | GLOW DISCHARGE MILLING APPARATUS AND GLOW DISCHARGE MILLING METHOD - A glow discharge milling apparatus milling a sample by using glow discharge includes a glow discharge tube in which in an atmosphere of mixed gas supplied through a pipe, a voltage is applied between an internal electrode and a sample placed opposite to the electrode so that glow discharge is generated; a reception part receiving a mixing ratio by which inert gas and oxygen gas are to be mixed with each other; a control part, in accordance with the mixing ratio received by the reception part, controlling the amounts of supply of the inert gas and the oxygen gas; and a supply unit mixing the inert gas and the oxygen gas with each other in accordance with the amounts of supply controlled by the control part and then supplying the mixed gas to said glow discharge tube through said pipe. | 09-26-2013 |
20130264192 | METHOD FOR MAKING STRIP SHAPED GRAPHENE LAYER - A method for making a strip shaped graphene layer includes the following steps. First, a graphene film located on a surface of a substrate is provided. Second, a drawn carbon nanotube film composite is disposed on the graphene film. The drawn carbon nanotube film composite includes a polymer material and a drawn carbon nanotube film structure disposed in the polymer material. The drawn carbon nanotube film structure includes a number of carbon nanotube segments and a number of strip-shaped gaps between the adjacent carbon nanotube segments. Third, the polymer material is partly removed to expose the carbon nanotube segments. Fourth, the carbon nanotube segments and the graphene film covered by the plurality of carbon nanotube segments are etched. Fifth, the remained polymer material is removed to obtain the strip shaped graphene layer. | 10-10-2013 |
20130264193 | METHOD FOR MAKING STRIP SHAPED GRAPHENE LAYER - A method for making a strip shaped graphene layer includes the following steps. First, a graphene film is located on a surface of a substrate is provided. Second, a carbon nanotube structure is disposed on the graphene film. The carbon nanotube structure includes a plurality of carbon nanotube segments and a plurality of strip-shaped gaps between the adjacent carbon nanotube segments. Third, the graphene film exposed by the strip-shaped gaps is removed by a reactive ion etching method. | 10-10-2013 |
20130319849 | PREPARATION OF LAMELLAE FOR TEM VIEWING - A method and apparatus for producing thin lamella for TEM observation. The steps of the method are robust and can be used to produce lamella in an automated process. In some embodiments, a protective coating have a sputtering rate matched to the sputtering rate of the work piece is deposited before forming the lamella. In some embodiments, the bottom of the lamella slopes away from the feature of interest, which keeps the lamella stable and reduces movement during thinning. In some embodiments, a fiducial is used to position the beam for the final thinning, instead of using an edge of the lamella. In some embodiments, the tabs are completed after high ion energy final thinning to keep the lamella more stable. In some embodiments, a defocused low ion energy and pattern refresh delay is used for the final cut to reduce deformation of the lamella. | 12-05-2013 |
20130319850 | NANOIMPRINT LITHOGRAPHY METHOD FOR MAKING A BIT-PATTERNED MEDIA MAGNETIC RECORDING DISK USING IMPRINT RESIST WITH ENLARGED FEATURE SIZE - A method for making a patterned-media magnetic recording disk using nanoimprint lithography (NIL) enlarges the size of the imprint resist features after the imprint resist has been patterned by NIL. The layer of imprint resist material is deposited on a disk blank, which may have the magnetic layer already deposited on it. The imprint resist layer is patterned by NIL, resulting in a plurality of spaced-apart resist pillars with sloped sidewalls from the top to the base. An overlayer of a material like a fluorocarbon polymer is deposited over the patterned resist layer, including over the sloped resist pillar sidewalls. This enlarges the lateral dimension of the resist pillars. The overlayer is then etched to leave the overlayer on the sloped resist pillar sidewalls while exposing the disk blank in the spaces between the resist pillars. The resist pillars with overlayer on the sloped resist pillar sidewalls is then used as a mask for etching the disk blank, leaving a plurality of discrete islands on the disk blank. | 12-05-2013 |
20130327636 | Pattern Transfer With Self-assembled Nanoparticle Assemblies - In one aspect, a method comprises: providing a substrate having at least one layer in which the patterned dot array is to be fabricated; depositing a nanoparticle layer, wherein the nanoparticle layer comprises one or more surfactants and nanoparticles coated with the one or more surfactants; treating the one or more surfactants that coat the nanoparticles and the portions of the one or more surfactants that fill the spaces among the nanoparticles; removing the portions of the one or more surfactants that fill the spaces among the nanoparticles to expose portions of the at least one layer in which the patterned dot array is to be fabricated; etching the exposed portions of the at least one layer in which the patterned dot array is to be fabricated; and removing at least a portion of the nanoparticles. | 12-12-2013 |
20140102881 | METHOD OF AND APPARATUS FOR IN-SITU REPAIR OF REFLECTIVE OPTIC - Method of and apparatus for repairing an optical element disposed in a vacuum chamber while the optical element is in the vacuum chamber. An exposed surface of the optical element is exposed to an ion flux generated by an ion source to remove at least some areas of the surface that have been damaged by exposure to the environment within the vacuum chamber. The method and apparatus are especially applicable to repair multilayer mirrors serving as collectors in systems for generating EUV light for use in semiconductor photolithography. | 04-17-2014 |
20140131195 | Dual Laser Beam System Used With an Electron Microscope and FIB - The present invention discloses an electron microscope and FIB system for processing and imaging of a variety of materials using two separate laser beams of different characteristics. The first laser beam is used for large bulk material removal and deep trench etching of a workpiece. The second laser beam is used for finer precision work, such as micromachining of the workpiece, small spot processing, or the production of small heat affected zones. The first laser beam and the second laser beam can come from the same laser source or come from separate laser sources. Having one laser source has the additional benefits of making the system cheaper and being able to create separate external and internal station such that the debris generated from bulk material removal from the first laser beam will not interfere with vacuum or components inside the particle beam chamber. | 05-15-2014 |
20140251790 | ION BEAM ETCHING METHOD OF MAGNETIC FILM AND ION BEAM ETCHING APPARATUS - To restrict generation of particles or deterioration in process reproducibility caused by a large amount or carbon polymers generated in a plasma generation portion in an ion beam etching apparatus when a magnetic film on a substrate is etched with reactive ion beam etching in manufacturing a magnetic device. In an ion beam etching apparatus, first carbon-containing gas is introduced by a first gas introduction part into a plasma generation portion, and second carbon-containing gas is additionally introduced by a second gas introduction part into a substrate processing space to perform reactive ion beam etching, thereby etching a magnetic material at preferable selection ratio and etching rate while restricting carbon polymers from being formed in the plasma generation portion. | 09-11-2014 |
20140299465 | SOLID SURFACE SMOOTHING METHOD - In a method of irradiating a gas cluster ion beam on a solid surface and smoothing the solid surface, the angle formed between the solid surface and the gas cluster ion beam is chosen to be between 1° and an angle less than 30°. In case the solid surface is relatively rough, the processing efficiency is raised by first irradiating a beam at an irradiation angle θ chosen to be something like 90° as a first step, and subsequently at an irradiation angle θ chosen to be 1° to less than 30° as a second step. Alternatively, the set of the aforementioned first step and second step is repeated several times. | 10-09-2014 |
20140332372 | PLASMA ETCHING METHOD - An isotropic etching process can be performed with high uniformity. A plasma etching method of etching an etching target layer containing silicon includes preparing a processing target object having the etching target layer in a processing chamber; removing an oxide film on a surface of the etching target layer by generating plasma of a first processing gas that contains a fluorocarbon gas or a fluorohydrocarbon gas but does not contain oxygen; removing a carbon-based reaction product generated when the removing of the oxide film by generating plasma of a second processing gas that does not contain oxygen; and etching the etching target layer without applying a high frequency bias power to a lower electrode serving as a mounting table configured to mount the processing target object thereon by generating plasma of a third processing gas containing a fluorocarbon gas or a fluorohydrocarbon gas with a microwave. | 11-13-2014 |
20140353141 | Method for Manufacturing Holographic Blazed Grating - A method for fabricating a holographic blazed grating is provided. The method includes: coating a photoresist layer on a substrate; performing lithography on the photoresist layer to form a photoresist grating; performing vertical ion beam etching on the substrate by using the photoresist grating as a mask, to form a homogeneous grating by transferring a pattern of the photoresist grating onto the substrate; cleaning the substrate to remove remaining photoresist; performing tilted Ar ion beam scanning etching on the substrate by using the homogeneous grating as a mask, and etching different portions of the substrate by utilizing a obscuring effect of the homogeneous grating mask on the ion beam, to form a triangular groove shape of the blazed grating; and cleaning the substrate to obtain the holographic blazed grating. | 12-04-2014 |
20140353142 | SUBSTRATE PROCESSING APPARATUS, ETCHING METHOD OF METAL FILM, AND MANUFACTURING METHOD OF MAGNETORESISTIVE EFFECT ELEMENT - In order to easily exchange a depleted dielectric member in a substrate processing apparatus, a faraday shield provided opposite to an antenna across a component member made of a dielectric, a first dielectric member provided opposite to the antenna across the component member and the faraday shield, and a second dielectric member provided opposite to the antenna across the component member, the faraday shield, and the first dielectric member are provided, and the second dielectric member is placed on a protrusion part formed on a vacuum container in the substrate processing apparatus. | 12-04-2014 |
20150014152 | SELECTIVE SPUTTERING FOR PATTERN TRANSFER - Methods of patterning conductive layer with a mask are described. The methods include low-ion-mass sputtering of the conductive layer by accelerating (e.g. helium or hydrogen containing ions) toward a substrate which includes the patterned mask and the underlying conductive layer. The sputtering processes described herein selectively remove conductive layers while retaining mask material. | 01-15-2015 |
20150053548 | TEM SAMPLE PREPARATION - An improved method of preparing ultra-thin TEM samples that combines backside thinning with an additional cleaning step to remove surface defects on the FIB-facing substrate surface. This additional step results in the creation of a cleaned, uniform “hardmask” that controls the ultimate results of the sample thinning, and allows for reliable and robust preparation of samples having thicknesses down to the 10 nm range. | 02-26-2015 |
20150075972 | Detaching Probe from TEM Sample during Sample Preparation - An improved method of preparing a TEM sample. A sample is extracted from a work piece and attached to a probe for transport to a sample holder. The sample is attached to the sample holder using charged particle beam deposition, and mechanically separated from probe by moving the probe and the sample holder relative to each other, without severing the connection using a charged particle beam. | 03-19-2015 |
20150083581 | TECHNIQUES FOR PROCESSING SUBSTRATES USING DIRECTIONAL REACTIVE ION ETCHING - A method of treating a substrate includes directing ions to the substrate along at least one non-zero angle with respect to a perpendicular to a substrate surface in a presence of a reactive ambient containing a reactive species where the substrate includes a surface feature. At least one surface of the surface feature is etched using the ions in combination with the reactive ambient at a first etch rate that is greater than a second etch rate when the ions are directed to the substrate without the reactive ambient and greater than a third etch rate when the reactive ambient is provided to the substrate without the ions. | 03-26-2015 |
20150090583 | ION BEAM PROCESSING METHOD AND ION BEAM PROCESSING APPARATUS - The present invention has an objective to provide a processing method and an ion beam processing apparatus capable of inhibiting deposition of redeposited films even for fine patterns. In an embodiment of the present invention, ion beam processing is performed such that an etching amount of an ion beam incident in extending directions of pattern trenches formed on a substrate is made larger than the etching amount of the ion beam incident in other directions. This processing enables fine patterns to be processed while inhibiting redeposited films from being deposited on the bottom portions of the trenches of the fine patterns. | 04-02-2015 |
20150303028 | ION BEAM PROCESSING METHOD AND ION BEAM PROCESSING APPARATUS - An ion beam etching method includes applying a positive voltage for extracting ions into a vacuum container to a first electrode, under a first condition where irradiation of a substrate with an ion beam is blocked off by a shutter, generating plasma in an internal space under the first condition, forming the ion beam by forming, under the first condition, a second condition where a positive voltage is applied to the first electrode and a negative voltage is applied to a second electrode, and moving the shutter and processing the substrate by irradiating the substrate with the ion beam. | 10-22-2015 |
20160020069 | TEM SAMPLE PREPARATION - An improved method of preparing ultra-thin TEM samples that combines backside thinning with an additional cleaning step to remove surface defects on the FIB-facing substrate surface. This additional step results in the creation of a cleaned, uniform “hardmask” that controls the ultimate results of the sample thinning, and allows for reliable and robust preparation of samples having thicknesses down to the 10 nm range. | 01-21-2016 |
20160064026 | METHOD FOR MAKING A PATTERNED PERPENDICULAR MAGNETIC RECORDING DISK USING GLANCING ANGLE DEPOSITION OF HARD MASK MATERIAL - A method for making a bit-patterned media (BPM) magnetic recording disk by etching the recording layer using a patterned hard mask layer uses glancing angle deposition (GLAD) of additional hard mask material as a capping layer onto the tops of the patterned hard mask pillars while the disk is rotated about an axis orthogonal to the plane of the disk. In one embodiment the capping layer is deposited after the pillars have been only partially eroded during a partial ion-milling of the recording layer. Ion-milling is then again performed to remove the remaining recording layer material. In another embodiment, before ion-milling of the recording layer, the capping layer is deposited onto the tops of the un-eroded hard mask pillars. This increases the lateral dimension of the hard mask pillars so that after ion-milling of the recording layer, the magnetic islands have an increased lateral dimension. | 03-03-2016 |
20160068970 | METHOD OF SMOOTHING SOLID SURFACE WITH GAS CLUSTER ION BEAM AND SOLID SURFACE SMOOTHING APPARATUS - A method of smoothing a solid surface with a gas cluster ion beam includes irradiating the solid surface with the gas cluster ion beam. The irradiating includes, when scratches which can be likened to a line-and-space pattern structure with widths and heights on the order of a submicrometer to micrometer are present on the solid surface, a process of emitting the gas cluster ion beam so as to expose substances, which remain on side-walls of the scratches due to lateral transferal caused by collisions with gas clusters, to other gas clusters, and the gas cluster ion beam diverges non-concentrically and/or non-uniformly. | 03-10-2016 |
20160071693 | CONTROL OF ION ANGULAR DISTRIBUTION OF ION BEAMS WITH HIDDEN DEFLECTION ELECTRODE - A processing apparatus may include: an extraction plate disposed along a side of a plasma chamber, the extraction plate having a first and second aperture, and middle portion between the first and second aperture, the first and second aperture being configured to define a first and second ion beam when the plasma is present in the plasma chamber and an extraction voltage is applied between the extraction plate and a substrate; a hidden deflection electrode disposed adjacent the middle portion outside of the plasma chamber, and electrically isolated from the extraction plate; and a hidden deflection electrode power supply to apply a bias voltage to the hidden deflection electrode, wherein the bias voltage is configured to modify a mean angle of incidence of ions and/or a range of angles of incidence centered around the mean angle of incidence in the first and second ion beam. | 03-10-2016 |
20160089723 | METHOD OF FABRICATING NANOSTRUCTURES USING MACRO PRE-PATTERNS - A method of fabricating nanostructures using macro pre-patterns according to the present invention, which comprises either depositing a target material on a substrate having macro pre-patterns formed thereon, or applying a target material to a substrate and then forming macro pre-patterns on the substrate, and then depositing the target material on the side surface of the macro pre-patterns by an ion bombardment phenomenon occurring during etching, provides a three-dimensional nanostructures with high aspect ratio and uniformity can be fabricated by a simple process at low cost by using the ion bombardment phenomenon occurring during physical ion etching, thereby achieving the high performance of future nano-devices, such as nanosized electronic devices, optical devices, bio devices and energy devices. | 03-31-2016 |
20160155602 | Ion Milling Device and Processing Method Using the Ion Milling Device | 06-02-2016 |