Class / Patent application number | Description | Number of patent applications / Date published |
204192300 | With sputter etching | 9 |
20090127095 | Method for forming fine particles, method for forming concavities and convexities, and device for forming fine particles - A method of the present invention for forming fine particles includes forming fine particles on a substrate by supplying, in the presence of inert gas, to the substrate, atoms or molecules of a supply material capable of being combined with a material constituting a surface of the substrate to produce a compound, the atoms or the molecules being supplied from a supply source. The supply source is positioned in such a manner as not to be directly connected by a line with the surface of the substrate where the fine particles are to be formed, and a high-frequency voltage varying positively and negatively, ranging from 100 kHz to 100 MHz, is applied to at least one of the substrate and a substrate supporter for supporting the substrate. This realizes a method for forming fine particles that allows forming highly uniformed magnetic fine particles with a periodic pattern through a simple process at a time. | 05-21-2009 |
20090272641 | SPUTTER TARGET, METHOD FOR MANUFACTURING A LAYER, PARTICULARLY A TCO (TRANSPARENT CONDUCTIVE OXIDE) LAYER, AND METHOD FOR MANUFACTURING A THIN LAYER SOLAR CELL - In the present invention a sub-stoichiometric ceramic ZnO | 11-05-2009 |
20100155223 | Electromagnet array in a sputter reactor - A multi-step process performed in a plasma sputter chamber including sputter deposition from the target and argon sputter etching of the substrate. The chamber includes a quadruple electromagnetic coil array coaxially arranged in a rectangular array about a chamber axis outside the sidewalls of a plasma sputter reactor in back of an RF coil within the chamber. The coil currents can be separately controlled to produce different magnetic field distributions, for example, between a sputter deposition mode in which the sputter target is powered to sputter target material onto a wafer and a sputter etch mode in which the RF coil supports the argon sputtering plasma. A TaN/Ta barrier is first sputter deposited with high target power and wafer bias. Argon etching is performed with even higher wafer bias. A flash step is applied with reduced target power and wafer bias. | 06-24-2010 |
20110031107 | METHOD OF BURYING METAL AND APPARATUS OF DEPOSITING METAL IN CONCAVE PORTION - The present invention provides the technology for burying metal even in a fine concave portion such as trench and via. According to an embodiment of the present invention, a vapor of the metal as the objective material, a gas containing halogen for etching the metal, and a metal halide vapor made up of the metal element and the halogen element are supplied to the substrate, which thus forms a metal halide layer in the concave portion, and thereby deposits the metal under the metal halide layer. The procedure can achieve the above object. | 02-10-2011 |
20110180388 | Plasma Processing Method and Plasma Processing Apparatus - [Object] To provide a plasma processing method and a plasma processing apparatus having high coverage property and excellent in-plane uniformity. | 07-28-2011 |
20130092527 | Method for Manufacturing Shielding - A method for manufacturing shielding which uses multiple vacuum sputtering methods to produce shielding on single IC chip. The method comprises the following steps: using covering fixtures to cover a plurality of IC chips and fixing these IC chips on a work support; vacuumizing the chamber to a pretreatment vacuum level; keeping pumping an ionizable gas into the chamber and performing ion bombardment on the material for IC packaging on the surface of these IC chips in order to produce carbon dangling bond connection layer on the material when the vacuum level of the chamber reaches the work vacuum level; performing multiple vacuum sputtering method to sequentially form a first coating layer, a second coating layer and a third coating layer on the carbon dangling bond connection layer; and breaking the vacuum status of the chamber and taking out the coated IC chips. | 04-18-2013 |
20140042013 | MAGNETIC RECORDING MEDIUM, METHOD OF MANUFACTURING THE SAME, AND MAGNETIC RECORDING/REPRODUCTION APPARATUS - According to one embodiment, a magnetic recording medium includes a substrate, an auxiliary layer formed on the substrate, and at least one perpendicular magnetic recording layer formed on the auxiliary layer. The perpendicular magnetic recording layer includes a magnetic dot pattern. The perpendicular magnetic recording layer is made of an alloy material containing one element selected from iron and cobalt, and one element selected from platinum and palladium. This alloy material has the L1 | 02-13-2014 |
20140262748 | APPARATUS AND METHOD FOR THE PRETREATMENT AND/OR FOR THE COATING OF AN ARTICLE IN A VACUUM CHAMBER WITH A HIPIMS POWER SOURCE - An apparatus for the pretreatment and/or for the coating of an article in a vacuum chamber having at least one cathode arranged therein having at least one HIPIMS power source and also having a device which generates a tunnel-like magnetic field in front of the surface of the cathode, is characterized in that the device is designed in order to generate the tunnel-like magnetic field in front of a portion of the surface of the cathode and in that the device is displaceable relative to the cathode to allow the magnetic field to act in front of at least one further portion of the surface of the cathode. The device can consist of permanent magnets, which are displaced relative to the cathode, or of magnetic field generating coils, which can be movably arranged or stationary. | 09-18-2014 |
20150083580 | PLASMA PROCESSING METHOD - A method includes: etching a target layer of a target object in a processing chamber by generating a plasma of a first gas containing at least one of SF | 03-26-2015 |