Class / Patent application number | Description | Number of patent applications / Date published |
204192200 | Ferromagnetic | 13 |
20090134011 | Method for producing a directional layer by cathode sputtering, and device for implementing the method - For producing a directional layer for instance with constant nominal directionality, such as a low-retentivity layer with a preferred direction of magnetization or a support layer for such a layer by cathode sputtering on a substrate surface ( | 05-28-2009 |
20090314632 | FCC-like trilayer AP2 structure for CPP GMR EM improvement - A method of forming a CPP-GMR spin valve having a pinned layer with an AP2/coupling/AP1 configuration is disclosed wherein the AP2 portion is a FCC-like trilayer having a composition represented by Co | 12-24-2009 |
20090321246 | METHOD OF FABRICATING AND APPARATUS OF FABRICATING TUNNEL MAGNETIC RESISTIVE ELEMENT - A method and an apparatus of fabricating a tunnel magnetic resistive element which do not show much dispersion in RA and capable of obtaining a high MR ratio in a low RA are provided. The method of fabricating a tunnel magnetic resistive element includes a first ferromagnetic layer, a tunnel barrier layer made of metal oxide and a second ferromagnetic layer, wherein a step of making the tunnel barrier layer includes carrying out film formation of a first metal layer while doping oxygen on the first ferromagnetic layer, subsequently an oxidation process on the oxygen-doped first metal layer to make an oxide layer and film formation of a second metal layer on the oxide layer. | 12-31-2009 |
20100078310 | FABRICATING METHOD OF MAGNETORESISTIVE ELEMENT, AND STORAGE MEDIUM - The present invention provides a fabricating method of a magnetoresistive element having an MR ratio higher than a conventional MR ratio. In a step of depositing a magnetization fixed layer, a magnetization free layer, and a tunnel barrier layer on a substrate using a sputtering method in one embodiment of the present invention, the step of depositing the magnetization free layer deposits a ferromagnetic layer containing Co atoms, Fe atoms, and B atoms by a co-sputtering method using a first target containing Co atoms, Fe atoms and B atoms, and a second target having different B atom content from that of the first target. | 04-01-2010 |
20100270143 | SUBSTRATE STAGE, SPUTTERING APPARATUS PROVIDED WITH SAME, AND FILM FORMING METHOD - A substrate stage that is arranged in a vacuum chamber and that has a substrate mounting surface on which a substrate is mounted, including a first magnetic field applying unit that applies a magnetic field to the substrate, in which the internal magnetization direction of the first magnetic field applying unit and the thickness direction of the substrate match. | 10-28-2010 |
20110011733 | BUFFER LAYERS FOR L10 THIN FILM PERPENDICULAR MEDIA - A process of fabricating a perpendicular magnetic recording medium. In one embodiment, the process may comprise forming a metallic buffer layer with a (002) texture on an underlayer using a deposition process performed at a temperature below 30° C. The underlayer may have a crystalline (001) texture. The process may further comprise forming a perpendicular magnetic recording layer on top of the metallic buffer layer using a deposition process performed at a temperature above 350° C. The magnetic recording layer may comprise a magnetic material with a L1 | 01-20-2011 |
20110094875 | MAGNETORESISTANCE EFFECT DEVICE AND METHOD OF PRODUCTION OF THE SAME - A magnetoresistance effect device including a multilayer structure having a pair of ferromagnetic layers and a barrier layer positioned between them, wherein at least one ferromagnetic layer has at least the part contacting the barrier layer made amorphous and the barrier layer is an MgO layer having a highly oriented texture structure. | 04-28-2011 |
20120199470 | MTJ FILM AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing an MTJ film includes forming a first ferromagnetic layer; forming a tunnel barrier layer over the first ferromagnetic layer; and forming a second ferromagnetic layer over the tunnel barrier layer. The first ferromagnetic layer is a Co/Ni stacked film having perpendicular magnetic anisotropy. The step for forming a tunnel barrier layer includes repeating unit film formation treatment n times (n is an integer of 2 or more). The unit film formation treatment includes the steps of: depositing an Mg film by a sputtering method; and oxidizing the deposited Mg film. A film thickness of the deposited Mg film in the first unit film formation treatment is 0.3 nm or more and 0.5 nm or less. A film thickness of the deposited Mg film in the second unit film formation treatment or later is 0.1 nm or more and 0.45 nm or less. | 08-09-2012 |
20130134032 | METHOD OF FABRICATING AND APPARATUS OF FABRICATING TUNNEL MAGNETIC RESISTIVE ELEMENT - One embodiment of the present invention is a method of fabricating a tunnel magnetic resistive element including a first ferromagnetic layer, a tunnel barrier layer and a second ferromagnetic layer, comprising a step of making the tunnel barrier layer, comprising the step of making the tunnel barrier layer includes the steps of: forming a first layer on the first ferromagnetic layer by applying DC power to a metal target and introducing sputtering gas without introducing oxygen gas in a sputtering chamber; and forming a second layer on the first layer by applying DC power to the metal target and introducing the sputtering gas and oxygen gas with the DC power to be applied to the metal target from the step of forming the first layer in the sputtering chamber, wherein the second layer is oxygen-doped. | 05-30-2013 |
20150034476 | DEPOSITION OF THICK MAGNETIZABLE FILMS FOR MAGNETIC DEVICES - A PVD chamber for growing a magnetic film of NiFe alloy at a growth rate of greater than 200 nm/minute produces a film exhibiting magnetic skew of less than plus or minus 2 degrees, magnetic dispersion of less than plus or minus 2 degrees, DR/R of greater than 2 percent and film stress of less than 50 MPa. NiFe alloy is sputtered at a distance of 2 to 4 inches, DC power of 50 Watts to 9 kiloWats and pressure of 3 to 8 milliTorr. The chamber uses a unique field shaping magnetron having magnets arranged in outer and inner rings extending about a periphery of the magnetron except in two radially opposed regions in which the inner and outer rings diverge substantially toward a central axis of the magnetron. | 02-05-2015 |
20150068887 | MANUFACTURING METHOD OF MAGNETORESISTIVE ELEMENT AND MANUFACTURING APPARATUS OF THE SAME - According to one embodiment, a method of manufacturing a magnetoresistive element includes intermittently exposing a surface of a base substrate to sputter particles from a sputter target, and thereby forming a thin film on the base substrate. | 03-12-2015 |
20160020386 | METHOD OF MANUFACTURING MAGNETIC DEVICE - Provided is a method of manufacturing a magnetic device, the method including forming a magnetic layer; forming a lower insulating layer on the magnetic layer using a first gas, which is an inert gas having a greater atomic weight than argon (Ar); and forming an upper insulating layer on the lower insulating layer using Ar gas. | 01-21-2016 |
20160118073 | METHOD FOR MANUFACTURING GLASS SUBSTRATE, METHOD FOR MANUFACTURING MAGNETIC DISK, AND POLISHING LIQUID COMPOSITION FOR GLASS SUBSTRATE - The present invention provides a method for manufacturing a glass substrate for a magnetic disk or the like according to which surface roughnesses of main surfaces of a glass substrate can be reduced more than with currently available methods. In the present invention, by mirror-polishing (final finishing-polishing) the main surfaces of the glass substrate used in a magnetic disk, for example, using a polishing liquid containing organic-based particles made of a styrene-based resin, an acrylic resin, or a urethane-based resin, as polishing abrasive particles, surface roughnesses of the main surfaces of the substrate can be reduced more than with currently available methods. | 04-28-2016 |