Class / Patent application number | Description | Number of patent applications / Date published |
204192170 | Electrical contact material | 23 |
20080264776 | Methods of Making Gold Nitride - A method of treating a gold film to form gold nitride is proposed, which includes the steps of: generating a nitrogen plasma with a radio frequency field and a power of less than or equal to about 2 kW; and treating said gold film with said nitrogen plasma. The method can be carried out using commercially available apparatus such as an etching machine. The radio frequency field is preferably between 10 and 17 MHz, and the power used to generate the nitrogen plasma is preferably less than or equal to 300 W. The gold film may be biased to achieve directional attack of the plasma. A further method of forming gold nitride is proposed which includes the step of sputtering from a gold target with a nitrogen plasma to form a film of gold nitride on a substrate. | 10-30-2008 |
20090166187 | Lithium-Containing Transition Metal Oxide Target, Process for Producing the same and Lithium Ion Thin Film Secondary Battery - Proposed are a lithium-containing transition metal oxide target formed from a sintered compact of lithium-containing transition metal oxides showing a hexagonal crystalline system in which the sintered compact has a relative density of 90% or higher and an average grain size of 1 μm or greater and 50 μm or less, and a lithium-containing transition metal oxide target formed from a sintered compact of lithium-containing transition metal oxides showing a hexagonal crystalline system in which the intensity ratio of the (003) face, (101) face and (104) face based on X-ray diffraction using CuKα ray satisfies the following conditions: (1) Peak intensity ratio of the (101) face in relation to the (003) face is 0.4 or higher and 1.1 or lower; and (2) Peak ratio of the (101) face in relation to the (104) face is 1.0 or higher. In addition to this lithium-containing transition metal oxide target optimal for forming a thin film positive electrode for use in a thin film battery such as a three-dimensional battery and a solid state battery, also proposed are its production method and a lithium ion thin film secondary battery. In particular, the present invention aims to propose a positive electrode target capable of obtaining a thin film with superior homogeneity. | 07-02-2009 |
20090272642 | METHOD AND ARRANGEMENT FOR PRODUCING CONTACTS ON PHOTOVOLTAIC ELEMENTS WITHOUT CARRIER SUBSTRATE - Please amend the Abstract of the Disclosure to read as follows. In accordance with 37 CFR §1.72, the abstract is submitted herewith on a separate sheet of paper, following page 9 of this amendment. | 11-05-2009 |
20100038234 | Method for Forming Multilayer Film and Apparatus for Forming Multilayer Film - A multilayer thin film formation method and a multilayer thin film formation apparatus that improve dielectric characteristics and piezoelectric characteristics of a thin film formed from a lead-based perovskite complex oxide. The multilayer thin film formation method includes formation of a lower electrode layer ( | 02-18-2010 |
20100258433 | FILM FORMING METHOD AND FILM FORMING APPARATUS FOR TRANSPARENT ELECTRICALLY CONDUCTIVE FILM - A film forming method for a transparent electrically conductive film that forms a zinc oxide-based transparent electrically conductive film on a substrate by sputtering using a target containing a zinc oxide-based material, performing the sputtering in a reactive gas atmosphere that contains two types or three types selected from among a group consisting of hydrogen gas, oxygen gas and water vapor. | 10-14-2010 |
20100294650 | PROCESS FOR PRODUCING LIQUID CRYSTAL DISPLAY DEVICE - A process for producing a liquid crystal display device that includes at least a pair of substrates holding a liquid crystal layer therebetween and a pixel electrode superimposed on the liquid crystal layer side of the pair of substrates, the pixel electrode on at least one of the pair of substrates being formed of a transparent electroconductive film made of zinc oxide as a fundamental constituent material, the process includes: a step of forming a zinc oxide transparent electroconductive film on the substrate by sputtering, using a target of a zinc oxide series material to form the pixel electrode, wherein, in the step of forming the pixel electrode, sputtering is performed in an atmosphere containing two or three materials selected from the group consisting of hydrogen gas, oxygen gas, and water vapor. | 11-25-2010 |
20100326818 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SPUTTERING APPARATUS - The invention provides a method of manufacturing a semiconductor device and a sputtering apparatus which improve the composition of a film formed by a metal and a reactive gas without increasing the number of steps. An embodiment includes the steps of: placing a substrate on a substrate holder in a process chamber; and sputtering a target in the process chamber by applying electric power thereto while feeding a first reactive gas and a second reactive gas having higher reactivity than that of the first reactive gas into the process chamber, to form a film containing a target material on the substrate. The step of forming a film is conducted by feeding at least the first reactive gas from a first gas feed opening formed near the target, and by feeding the second reactive gas from a second gas feed opening formed at a position with the distance from the target larger than that of the first gas feed opening. | 12-30-2010 |
20110024285 | Method for alkali doping of thin film photovoltaic materials - An alkali-containing transition metal sputtering target, the method of making the same, and the method of manufacturing a solar cell using the same. | 02-03-2011 |
20110031110 | Methods of Making, and, Analyte Sensor - The subject invention provides conductive stripes, suitable for use as electrodes, and methods of making conductive stripes. | 02-10-2011 |
20110233051 | Layout method of bridging electrode - In a layout method of a bridging electrode, the method includes the steps of: providing a substrate; forming a transparent electro-conductive layer on the substrate and the transparent electro-conductive layer having a plurality of neighboring patterned blocks; forming an alignment film layer on the substrate and the alignment film layer having a plurality of bridging grooves of a bridging insulation unit crossing between the patterned blocks; forming an electro-conductive layer on the substrate and the electro-conductive layer having a plurality of wires respectively disposed on the bridging grooves, wherein the wires of the electro-conductive layer being formed through an optical compensation mask in conjunction with at least one of over-exposure and over-development; and forming a protection layer on the substrate to enhance optical transmission and to protect the substrate, the transparent electro-conductive layer, the alignment film layer and the electro-conductive layer. | 09-29-2011 |
20120125765 | PLASMA PROCESSING APPARATUS AND PRINTED WIRING BOARD MANUFACTURING METHOD - It is an object of the present invention to provide a wiring board plasma processing apparatus capable of improving throughput and achieving reduction in running cost while a sputtering process is employed in manufacturing a wiring board. The wiring board plasma processing apparatus of the present invention has, in a same plasma processing chamber, a surface processing portion provided with a plasma source and performing a pretreatment of a board to be processed, and a plurality of sputtering film forming portions forming a seed layer formed of a plurality of films. | 05-24-2012 |
20130186746 | Method and Apparatus for Producing Controlled Stresses and Stress Gradients in Sputtered Films - An enhanced sputtered film processing system and associated method comprises one or more sputter deposition sources each having a sputtering target surface and one or more side shields extending therefrom, to increase the relative collimation of the sputter deposited material, such as about the periphery of the sputtering target surface, toward workpiece substrates. One or more substrates are provided, wherein the substrates have a front surface and an opposing back surface, and may have one or more previously applied layers, such as an adhesion or release layer. The substrates and the deposition targets are controllably moved with respect to each other. The relatively collimated portion of the material sputtered from the sputtering target surface travels beyond the side shields and is deposited on the front surface of the substrates. The increase in relative collimation results in deposited films with desirable properties including but not limited to high levels of both readily controllable compressive stress and mechanical integrity without the use of ion bombardment. | 07-25-2013 |
20130270105 | ELECTROCHROMIC DEVICES - Conventional electrochromic devices frequently suffer from poor reliability and poor performance. Improvements are made using entirely solid and inorganic materials. Electrochromic devices are fabricated by forming an ion conducting electronically insulating interfacial region that serves as an IC layer. In some methods, the interfacial region is formed after formation of an electrochromic and a counter electrode layer. The interfacial region contains an ion conducting electronically insulating material along with components of the electrochromic and/or the counter electrode layer. Materials and microstructure of the electrochromic devices provide improvements in performance and reliability over conventional devices. | 10-17-2013 |
20140102878 | DEPOSITION OF LiCoO2 - In accordance with the present invention, deposition of LiCoO | 04-17-2014 |
20140166471 | DEPOSITING LITHIUM METAL OXIDE ON A BATTERY SUBSTRATE - A method of depositing lithium metal oxide on a battery substrate in a sputtering chamber comprising a substrate support, first and second sputtering targets each comprising lithium metal oxide, and first and second electrodes about the backside surfaces of the first and second sputtering targets respectively. In the method, a substrate is placed on the substrate support, sputtering gas maintained at a pressure and energized by applying an alternating voltage of AC power to the first and second electrodes so that each electrode is alternately either an anode or a cathode. The alternating voltage can be applied within a frequency range while also applying a time varying magnetic field about each of the surfaces of the first and second targets. | 06-19-2014 |
20140202848 | METHOD FOR REMOVING IMPURITIES FROM INSIDE OF VACUUM CHAMBER, METHOD FOR USING VACUUM APPARATUS, AND METHOD FOR MANUFACTURING PRODUCT - A method for using a vacuum apparatus that includes a vacuum chamber and a pump, the vacuum chamber housing an object, the pump reducing an internal pressure of the vacuum chamber, the method including: ventilating inside the vacuum chamber by introducing a gas into the vacuum chamber and discharging the gas from the vacuum chamber by causing the pump to reduce the internal pressure of the vacuum chamber. In the ventilating, a discharge rate at which molecules of the gas per unit volume are discharged is at least 3.3×10 | 07-24-2014 |
20140291141 | Nanostructure Lithium Ion Battery - The embodiments of the embodiments of the Nanostructure Lithium Ion Battery are comprised of a multi-layer coaxial assembly formed over a cylindrical core. The multilayers are each comprised of sublayers in order as follows: a copper sublayer with nano “chicken wire” embedded in the copper sublayer for current collection, a nanostructured aluminum substrate sublayer, a nanostructured cathode sublayer, an electrolyte sublayer, a nanostructured anode sublayer, and a copper interlayer sublayer. The nanobatteries are arranged in layered stacks of nanocells. The nanocells stacks are comprised of a plurality of individual octagonal shaped multilayer nanocells. Each nanocell stack is electrically connected to an array of other nanocells stacks via electrode contacts. A lower copper bus serves as the anode current collector and an upper copper bus serves as the cathode current collector. Pass-throughs connect to the appropriate cathode layers in the multilayer nanocell stacks. | 10-02-2014 |
20140318949 | Method of Making, and, Analyte Sensor - The subject invention provides conductive stripes, suitable for use as electrodes, and methods of making conductive stripes. | 10-30-2014 |
20140374242 | TRANSPARENT CONDUCTIVE LAYER AND TRANSPARENT ELECTRODE COMPRISING THE SAME - Disclosed are a transparent conductive layer and a transparent electrode comprising the same, and in particular, a zinc oxide-based transparent conductive layer having a textured surface, wherein the textured surface has protrusions, each protrusion having a ridge forming an arc in its protruding direction, or having an apex at an edge thereof such that two ridges forms an obtuse angle of 90° or more. The transparent conductive layer is manufactured by sputtering only without wet etching. | 12-25-2014 |
20150311046 | FABRICATING LOW-DEFECT RARE-EARTH DOPED PIEZOELECTRIC LAYER - A plasma vapor deposition (PVD) system and method for depositing a piezoelectric layer over a substrate are disclosed. A plasma is created in a reaction chamber creates from the sputtering gas supplied to the reaction chamber. The plasma sputters atoms from the sputtering target, which are deposited on the substrate for forming the thin film of the material. | 10-29-2015 |
20150329956 | METHOD FOR CONTINUOUSLY FORMING NOBLE METAL FILM AND METHOD FOR CONTINUOUSLY MANUFACTURING ELECTRONIC COMPONENT - The purpose of the present invention is to prevent a drop in secondary electron emission characteristics due to the inside wall of a chamber being covered by a noble metal film continuously formed by plasma sputtering, and so generate and maintain the plasma. After a noble metal film is formed on a given substrate and before a film is formed on a subsequent substrate, a secondary electron emission film comprising a material having a secondary electron emission coefficient higher than that of the noble metal is formed on the inner wall of the chamber. | 11-19-2015 |
20150345036 | ATOMIC LAYER EPITAXY OF HEMATITE ON INDIUM TIN OXIDE FOR APPLICATION IN SOLAR ENERGY CONVERSION - A method to provide an article of manufacture of iron oxide on indium tin oxide for solar energy conversion. An atomic layer epitaxy method is used to deposit an uncommon bixbytite-phase iron (III) oxide (β-Fe | 12-03-2015 |
20160099482 | Solid-State Batteries with Improved Electrode Conductivity and Methods for Forming the Same - Embodiments provided herein describe solid-state lithium batteries and methods for forming such batteries. A first current collector is provided. A first electrode is formed above the first current collector. The first electrode includes lithium and cobalt and is formed using PVD in a gaseous environment including at least 96% argon. An electrolyte is formed above the first electrode. A second electrode is formed above the electrolyte. A second current collector is formed above the second electrode. | 04-07-2016 |