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Specified deposition material or use

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204 - Chemistry: electrical and wave energy

204000000 - PROCESSES AND PRODUCTS

204192100 - Coating, forming or etching by sputtering

204192120 - Glow discharge sputter deposition (e.g., cathode sputtering, etc.)

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Class / Patent application numberDescriptionNumber of patent applications / Date published
204192260 Optical or photoactive 36
204192250 Semiconductor 35
204192220 Insulator or dielectric 12
204192170 Electrical contact material 12
204192200 Ferromagnetic 9
204192160 Wear or abrasion resistant 7
204192210 Resistor 6
204192300 With sputter etching 6
204192180 Piezoelectric 4
20090255804PIEZOELECTRIC FILM FORMING METHOD - When forming a piezoelectric film of a Pb containing perovskite-type oxide on a substrate by sputtering, forming the film under a film forming condition in which a film forming temperature Ts(° C.) and a surface potential Vsub of the substrate satisfy Formulae (1) and (2) below respectively.10-15-2009
20100133091THIN FILM PRODUCING METHOD AND HEXAGONAL PIEZOELECTRIC THIN FILM PRODUCED THEREBY - A magnetron circuit of a rectangular type is disposed on a lower surface of a rectangular target. A half of the target is covered with a shield plate, so that sputtering particles sputtered from an erosion region (a region with a maximized magnetic flux density) therebelow is blocked so as not to fly toward a substrate. The substrate is disposed at a level so as to be located in a plasma region of a vacuum chamber, and sputtering particles (ZnO) sputtered from a region exposed from the shield plate in the erosion region is caused to be incident on a surface of the substrate. When a gas pressure is lowered, a mean free path of each of the sputtering particles is lengthened to cause a large amount of high-energy sputtering particles to be incident. As a result, a hexagonal crystal particle having a plane that is a crystal plane hardly damaged by incidence of the high-energy sputtering particles is preferentially grown to form a c-axis in-plane oriented film.06-03-2010
20110180391METHOD OF FABRICATING PIEZOELECTRIC MATERIAL WITH SELECTED C-AXIS ORIENTATION - In accordance with a representative embodiment, a method of fabricating a piezoelectric material comprising a first component and a second component comprises: providing a substrate; flowing hydrogen over the substrate; flowing the first component to form the piezoelectric material over a target; and sputtering the piezoelectric material from the target on the substrate. In accordance with another representative embodiment, a method of fabricating a bulk acoustic wave (BAW) resonator comprises: forming a first electrode over a substrate; forming a seed layer over the substrate; and depositing a piezoelectric material having a compression-negative (C07-28-2011
20100051447SOL-GEL PRECURSORS AND METHODS FOR MAKING LEAD-BASED PEROVSKITE FILMS - A simple, economical sol-gel method was invented to produce thick and dense lead zirconate titanate (PZT) thin films that exhibit the stoichiometric chemical composition and unprecedented electrical and dielectric properties. The PZT films are the foundation of many microelectromechanical systems (MEMS) and nanoelectromechanical systems (NEMS) for micro/nano sensors and actuators applications.03-04-2010
Entries
DocumentTitleDate
20100059363SURFACE TREATMENT OF ALUMINA FILMS - A method of treating an alumina film comprising the step of exposing said alumina film to a carboxylic acid solution under conditions to reduce the hydropilic properties of the surface of said film.03-11-2010
20120160663Sputter Deposition and Annealing of High Conductivity Transparent Oxides - Sputtering deposition processes for generation of transparent conductive metal oxide films, and films produced by such methods, are disclosed.06-28-2012
20080308411METHOD AND PROCESS FOR DEPOSITION OF TEXTURED ZINC OXIDE THIN FILMS - A method for sputtering a textured zinc oxide coating onto a substrate by reactive-environment hollow cathode sputtering comprises providing a sputter reactor that has a cathode channel and a flow exit end. The cathode channel allows a gas stream to flow therein. This cathode channel is at least partially defined by a channel-defining surface that includes at least one zinc-containing target. A gas is flowed through the channel, such that the gas emerges from the flow exit. A plasma is then generated such that material is sputtered off the channel-defining surface to form a gaseous mixture containing zinc atoms that is transported to the substrate. A reactive gas is then introduced into the sputter reactor so that the reactive gas reacts with the zinc-containing gaseous mixture to form the textured zinc oxide coating.12-18-2008
20100051446FABRICATION OF SUSPENDED CARBON MICRO AND NANOSCALE STRUCTURES - Methods for the fabrication of suspended carbon structures using a negative photoresist that is exposed to a source of UV light, and a two step pyrolysis process. Ebeam lithography is used to define the suspended structures. The fabrication method described herein provides a novel carbon microfabrication technique, which has potential applications in carbon based electronics, sensors, batteries, microfluidics, etc.03-04-2010
20090090617Method and Apparatus for Producing Controlled Stresses and Stress Gradients in Sputtered Films - An enhanced sputtered film processing system and associated method comprises one or more sputter deposition sources each having a sputtering target surface and one or more side shields extending therefrom, to increase the relative collimation of the sputter deposited material, such as about the periphery of the sputtering target surface, toward workpiece substrates. One or more substrates are provided, wherein the substrates have a front surface and an opposing back surface, and may have one or more previously applied layers, such as an adhesion or release layer. The substrates and the deposition targets are controllably moved with respect to each other. The relatively collimated portion of the material sputtered from the sputtering target surface travels beyond the side shields and is deposited on the front surface of the substrates. The increase in relative collimation results in deposited films with desirable properties including but not limited to high levels of both readily controllable compressive stress and mechanical integrity without the use of ion bombardment.04-09-2009
20090057137SYNTHESIZING THIN FILMS OF LITHIATED TRANSITION METAL OXIDE FOR USE IN ELECTROCHEMICAL AND BATTERY DEVICES03-05-2009
20130075246METHODS OF FORMING A METAL CONTAINING LAYER ON A SUBSTRATE WITH HIGH UNIFORMITY AND GOOD PROFILE CONTROL - Methods for forming a metal containing layer onto a substrate with good deposition profile control and film uniformity across the substrate are provided. In one embodiment, a method of sputter depositing a metal containing layer on the substrate includes transferring a substrate in a processing chamber, supplying a gas mixture including at least Ne gas into the processing chamber, applying a RF power to form a plasma from the gas mixture, and depositing a metal containing layer onto the substrate in the presence of the plasma.03-28-2013
20100122900ITO-coated article for use with touch panel display assemblies, and/or method of making the same - Certain example embodiments of this invention relate to techniques for making a coated article including a transparent conductive indium-tin-oxide (ITO) film supported by a heat treated glass substrate. A substantially sub-oxidized ITO or metallic indium-tin (InSn) film is sputter-deposited onto a glass substrate at room temperature. The glass substrate with the as-deposited film thereon is subjected to elevated temperatures. Thermal tempering or heat strengthening causes the as-deposited film to be transformed into a crystalline transparent conductive ITO film. Advantageously, this may reduce the cost of touch panel assemblies, e.g., because of the higher rates of the ITO deposition in the metallic mode. The cost of touch-panel assemblies may be further reduced through the use of float glass.05-20-2010
20090008241METHOD FOR FORMING METALLIC NITRIDE FILM - A method for forming a metallic nitride film includes the steps of a) providing a target made of titanium or zirconium and a substrate in a vacuum chamber, and b) forming a metallic film, which is a TiN film or a ZrN film, on a surface of the substrate by sputtering deposition under the conditions of maintaining a working pressure of the vacuum chamber in a range of 5×1001-08-2009
20120175245GAP FILL IMPROVEMENT METHODS FOR PHASE-CHANGE MATERIALS - Methods and apparatus are provided for depositing phase-change materials. In one embodiment, a method is provided for processing a substrate including positioning a substrate in a processing chamber having a phase change material-based target coupled to a first power source, one or more coils coupled to a second power source, a substrate support coupled to a third power source, providing a processing gas to the processing chamber, biasing the phase change material-based target with continuous DC or pulsed DC power, applying power to the coils to generate an inductively coupled plasma, applying a bias to the substrate support, sputtering material from the target, ionizing the sputtered materials, and depositing the sputtered materials on the substrate surface.07-12-2012
20120175244Film Formation Apparatus and Manufacturing Apparatus - To provide a high-throughput film formation apparatus and manufacturing apparatus. A plurality of substrates are placed between a pair of sputtering targets and film formation are performed at one time. EL layers are formed with an evaporation apparatus, and then electrode layers or protective layers are formed with a sputtering apparatus at one time. The film formation is performed with the surfaces of the plurality of substrates set substantially perpendicular to the surface of at least one of the sputtering targets. Note that the electrode layer or the protective layer can be selectively formed using a mask so that a film is not formed over at least a peripheral portion of the substrate by sputtering.07-12-2012
20090120786Gallium Oxide-Zinc Oxide Sputtering Target, Method of Forming Transparent Conductive Film, and Transparent Conductive Film - Provided is a high density gallium oxide-zinc oxide series sintered body sputtering target for forming a transparent conductive film containing 20 to 500 mass ppm of aluminum oxide, In a gallium oxide (Ga05-14-2009
20130032468VACUUM PROCESSING APPARATUS, VACUUM PROCESSING METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD - A vacuum processing apparatus includes an evacuatable vacuum chamber, a substrate holder which is provided in the vacuum chamber, has a substrate chuck surface vertically facing down, and includes an electrostatic chuck mechanism which electrostatically chucks a substrate, a substrate support member which is provided in the vacuum chamber to keep the substrate parallel to the substrate chuck surface and support the substrate in an orientation that allows the substrate chuck surface to chuck the substrate, and a moving mechanism which moves at least one of the substrate holder and the substrate supported by the substrate support member so as to bring the substrate and the substrate holder into contact with each other, thereby causing the substrate holder to chuck the substrate.02-07-2013
20100101939Method For Preparing Zinc Oxide Nano Rod Substrate - The present invention discloses a method for preparing a zinc oxide (ZnO) nano rod substrate. First, a layer of ZnO nano particles was sputtered on the substrate and the ZnO nano rods were grown with the hydrothermal reaction on this substrate. Repeatedly proceeding the hydrothermal reaction can obtain a higher aspect ratio of the ZnO nano rods. According to this method, highly orientated ZnO nano rods will be prepared. The ZnO nano rods possess very high surface area and provide very effective pH tuning ability. The growth of ZnO nano rods on the plastic and fiber substrate were also prepared to increase the applicability.04-29-2010
20090159433Method for Sputter Targets for Electrolyte Films - Alternative sputter target compositions or configurations for thin-film electrolytes are proposed whereby the sputter target materials system possesses sufficient electrical conductivity to allow the use of (pulsed) DC target power for sputter deposition. The electrolyte film materials adopt their required electrically insulating and lithium-ion conductive properties after reactive sputter deposition from the electrically conducting sputter target materials system.06-25-2009
20090159432Thin-film deposition apparatus using discharge electrode and solar cell fabrication method - A discharge electrode, a thin-film deposition apparatus, and a solar cell fabrication method, which suppress the generation of a film thickness distribution and a film quality distribution, are provided. The discharge electrode includes two lateral structures 06-25-2009
20090159431Method for Forming Tantalum Nitride Film - A tantalum nitride film-forming method comprises the steps, according to the CVD technique, of introducing a raw gas consisting of a coordination compound constituted by an elemental tantalum (Ta) having a coordinated ligand represented by the general formula: N═(R, R′) (in the formula, R and R′ may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms) and a halogen gas into a film-forming chamber to thus form a film of a halogenated compound represented by the following general formula: TaN06-25-2009
20090159430Method for Forming Tantalum Nitride Film - A tantalum nitride film-forming method comprises the steps of introducing, into a vacuum chamber, a raw gas consisting of a coordination compound constituted by elemental Ta having a coordinated ligand represented by the general formula: N═(R,R′) (in the formula, R and R′ may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms) to thus adsorb the gas on a substrate; then introducing an NH06-25-2009
20100108496SPUTTERING APPARATUS, THIN FILM FORMATION APPARATUS, AND MAGNETIC RECORDING MEDIUM MANUFACTURING METHOD - A sputtering apparatus includes a first target accommodating unit to accommodate a first target for film formation on a substrate; a first heater, arranged to surround the first target, for heating the substrate; and a second target accommodating unit arranged to surround the first heater to accommodate a second target for film formation on the substrate.05-06-2010
20100108495THIN FILM FORMATION APPARATUS AND MAGNETIC RECORDING MEDIUM MANUFACTURING METHOD - The present invention provides a thin film formation apparatus which includes a plurality of chambers, and performs processing for forming thin films on two surfaces of a substrate transferred to the plurality of chambers, wherein a first sputtering chamber of the plurality of chambers includes a first sputtering film formation unit configured to perform a sputtering film formation process on a first surface of the substrate, and a first heating unit configured to heat a second surface opposite to the first surface of the substrate, and a second sputtering chamber of the plurality of chambers includes a second heating unit configured to heat the first surface of the substrate having undergone the sputtering film formation process performed by the first sputtering chamber, and a second sputtering film formation unit configured to perform a sputtering film formation process on the second surface of the substrate heated by the first sputtering chamber.05-06-2010
20120181167Electrochromic Tungsten Oxide Film Deposition - A deposition method for electrochromic WO07-19-2012
20130087447METHODS OF PREVENTING PLASMA INDUCED DAMAGE DURING SUBSTRATE PROCESSING - Methods for processing substrates are provided herein. In some embodiments, a method of processing a substrate within a process chamber having an electrostatic chuck to support a substrate in a processing region of the process chamber and a target disposed opposite the electrostatic chuck, wherein the target comprises a target material to be deposited on the substrate, may include disposing a substrate on the electrostatic chuck; providing a process gas to the processing region; igniting a plasma in the processing region from the process gas while the substrate is disposed on the electrostatic chuck with no chucking voltage provided to clamp the substrate to the electrostatic chuck; and depositing target material on the substrate to form a first barrier layer while no chucking voltage is provided, wherein the target material is sputtered from the target via the plasma.04-11-2013
20130048489ELECTRONIC DEVICE MANUFACTURING METHOD AND SPUTTERING METHOD - An electronic device manufacturing method includes a first step of moving a substrate holder close to a first shield member and locating a first projecting portion formed on the first shield member and having a ring shape and a second projecting portion having a ring shape and formed on a second shield member installed on the surface of the substrate holder at the outer peripheral portion of a substrate at a position to engage with each other in a noncontact state, a second step of, after the first step, sputtering a target while maintaining the first projecting portion and the second projecting portion at the position to engage with each other in the noncontact state, and a third step of, after the second step, setting the first shield member in an open state and sputtering the target to perform deposition on the substrate.02-28-2013
20100326816LOW-MAINTENANCE COATING TECHNOLOGY - The invention provides methods and equipment for depositing a low-maintenance coating.12-30-2010
20090301864Film Producing Method Using Atmospheric Pressure Hydrogen Plasma, and Method and Apparatus for Producing Refined Film - The present invention has been achieved to provide a method and apparatus for speedily and homogeneously fabricating polycrystalline silicon films or similar devices at low cost. A silicon target is attached to a water-cooled electrode, while a substrate made of a desired material is set on the other, heated electrode. When atmospheric pressure hydrogen plasma is generated between the two electrodes, silicon atoms will be released from the low-temperature target on the side and deposited on the high-temperature substrate. A doped silicon film can be created by using a target containing a doping element. Since there is no need to handle expensive and harmful gases (e.g. SiH12-10-2009
20120103794METHOD OF COATING AN RF DEVICE AND SPUTTERING APPARATUS USED IN THE SAME - A method of coating an RF device for reducing cost of manufacture and coating period of time and a sputtering apparatus used in the same are disclosed. The sputtering apparatus used for coating of an RF device includes a supporting member on which an object to be coated corresponding to the RF device is placed, a first target made up of material coated on the object and a second target disposed separately from the first target. Here, power is applied to the first target and the second target when the object is coated.05-03-2012
20090095617BIAS SPUTTERING FILM FORMING PROCESS AND BIAS SPUTTERING FILM FORMING APPARATUS - The present invention provides a bias sputtering film forming process and film forming apparatus that can form a coating film having a good film thickness distribution in a minute coated surface of a complicated shape, such as contact holes, through-holes and wiring grooves, especially for the sidewall portions thereof.04-16-2009
20130056349SPUTTERING TARGET AND METHOD OF MANUFACTURING MAGNETIC MEMORY USING THE SAME - Provided are a sputtering target including a target main body 03-07-2013
20130213798MAGNETRON SPUTTERING DEVICE, METHOD FOR CONTROLLING MAGNETRON SPUTTERING DEVICE, AND FILM FORMING METHOD - A magnetron sputtering device is provided with: a target part positioned in such a manner as to face a substrate held by a substrate holding part; a power source that supplies power to the target part; a magnet part that moves back and forth along the rear of the target part; a chamber having side walls that are electrically grounded; and a power source control part that controls the power source in such a manner that, while the magnet part is away from approach points, which are points respectively closest to the side walls, a prescribed voltage is applied to the target part by the power source, but the prescribed voltage is reduced when the magnet part reaches one of the approach points.08-22-2013
20090057136MANUFACTURING METHOD FOR THIN FILM BATTERY - A thin film battery manufacturing method is provided for deposition of lithium metal oxide films onto a battery substrate. The films are deposited in a sputtering chamber having a plurality of sputtering targets and magnetrons. The sputtering gas is energized by applying a voltage bias between a pair of the sputtering targets at a frequency of between about 10 and about 100 kHz. The method can provide a deposition rate of lithium cobalt oxide of between about 0.2 and about 4 microns/hr with improved film quality.03-05-2009
20090266704Sputtering Method and Sputtering Apparatus, and Electronic Device Manufacturing Method - A sputtering method comprising the steps of: arranging the plurality of targets in a vacuum container equidistantly in a transport direction of the substrate such that distances between the plurality of rectangular targets and the substrate are different; and assuming that lengths of sides, parallel to the transport direction, of adjacent first and second targets are expressed as first and second target width W10-29-2009
20090236219MAGNETRON UNIT, MAGNETRON SPUTTERING APPARATUS, AND METHOD OF MANUFACTURING ELECTRONIC DEVICE - A magnetron unit includes a plurality of first magnet elements each including first magnets which have the same polarity and are provided on two end portions of a yoke plate made of a magnetic material and a second magnet which has a polarity different from that of the first magnets and is provided on a middle portion of the yoke plate, a base plate on which a moving unit is placed to make each of the plurality of first magnet elements move in one direction, and a second magnet element which includes yoke plates made of a magnetic material and fixed to two end portions respectively, of the base plate, a magnet which has the same polarity as that of the second magnet and is placed on the yoke plate and a magnet which has the same polarity as that of the first magnet and is placed on the magnet.09-24-2009
20120228125CREATION OF MAGNETIC FIELD (VECTOR POTENTIAL) WELL FOR IMPROVED PLASMA DEPOSITION AND RESPUTTERING UNIFORMITY - A physical vapor deposition (PVD) system includes N coaxial coils arranged in a first plane parallel to a substrate-supporting surface of a pedestal in a chamber of a PVD system and below the pedestal. M coaxial coils are arranged adjacent to the pedestal. Plasma is created in the chamber. A magnetic field well is created above a substrate by supplying N currents to the N coaxial coils, respectively, and M currents to the M coaxial coils, respectively. The N currents flow in a first direction in the N coaxial coils and the M second currents flow in a second direction in the M coaxial coils that is opposite to the first direction. A recessed feature on the substrate arranged on the pedestal is filled with a metal-containing material by PVD using at least one operation with high density plasma having a fractional ionization of metal greater than 30%.09-13-2012
20090014318Phase-change material, sputter target comprising the phase-change material, method of forming phase-change layer using the sputter target, and method of manufacturing phase-change random access memory comprising the phase-change layer - Provided is a phase change material, a sputter target including the phase change material, a method of forming a phase change layer using the sputter target, and a method of manufacturing a phase change memory device including the phase change layer formed using the method. The phase change material may include fullerene, and the sputter target may include the phase change material that includes fullerene.01-15-2009
20080296149MIXED CHROMIUM OXIDE-CHROMIUM METAL SPUTTERING TARGET - An AC or DC sputtering target for depositing thin films of chromium sub oxides on a substrate contains oxides of chromium, chromium metal and incorporated oxygen. The target has a resistivity of 200Ω·cm or less. The target can be made from a combination of oxides of chromium powder and chromium metal, such as in powder form, or can be made starting with 100% chromium oxide or sub oxide material that is subjected to a reducing atmosphere either before or during the process of making the target in order to reduce a fraction of the chromium oxide and/or sub oxide material to chromium metal and retained oxygen. Such a target can enable the sputtering process to be conducted using inert argon gas only to yield a thin film of chromium oxide. This enables the surface of the target to remain in a continuously stable condition and free of the arcing problems associated with using chromium targets and argon and oxygen gas.12-04-2008
20090045047Conformal Magnetron Sputter Deposition - An apparatus and method for magnetron sputter coating of an interior surface of a hollow substrate defining at least one irregular contour. The apparatus may contain a vacuum chamber and a target containing one or more metals having an exterior surface defining at least one irregular contour. The exterior surface of the target may be configured to conform to at least a portion of an irregular contour of the interior surface of the hollow substrate to be coated. A magnet assembly may be supplied which may include a plurality of magnets where the magnets are positioned substantially within a metallic target alloy.02-19-2009
20090183985METHOD OF MANUFACTURING MAGNETIC RECORDING MEDIUM - One aspect of the embodiments utilizes, according to an aspect of the invention, a method of manufacturing a magnetic recording medium, which includes an intermediate layer and a granular magnetic layer as a recording layer sequentially formed on a non-magnetic substrate, includes the steps of forming the intermediate layer and forming the granular magnetic layer. The granular magnetic layer includes a plurality of magnetic particles made of a Co alloy and an oxide magnetically separating the plurality of magnetic particles by a sputtering method using a target. The target includes a Co alloy, one or more first oxides selected from a group of oxides of Si, Ti, Ta, Cr, W, and Nb, and a second oxide composed of a Co oxide.07-23-2009
20110284365LANTHANOID ALUMINATE FILM FABRICATION METHOD - A method of fabricating by co-sputtering deposition a lanthanoid aluminate film with enhanced electrical insulativity owing to suppression of deviation in composition of the film is disclosed. Firstly within a vacuum chamber, hold two separate targets, one of which is made of lanthanoid aluminate (LnAlO11-24-2011
20110284364Aluminum Doped Zinc Oxide Sputtering Targets - A sputtering target precursor material comprises a homogeneous distribution of a ZnAl11-24-2011
20110290638SPUTTER DEVICE AND METHOD OF MANUFACTURING MAGNETIC STORAGE MEDIUM - The present invention provides a sputter device and a method of manufacturing a magnetic storage medium capable of forming a buried layer with higher production efficiency in manufacturing a magnetic recording medium. In an embodiment of the present invention, cathodes in opposition to each other with a substrate (12-01-2011
20120097530Target of Sintered Compact, and Method of Producing the Sintered Compact - Provided is a target of sintered compact essentially consisting of an element of (A), an element of (B) and an element of (C) below, wherein the thermal conductivity is 2.5 W/mK or more and the oxygen concentration is 5000 ppm or more: 04-26-2012
20120097529MAGNETRON COATING MODULE AND MAGNETRON COATING METHOD - The invention relates to a new basic technology for magnetron sputtering of ceramic layers, in particular for optical applications. The new concept enables the construction of magnetron sputtering sources which, in comparison with the known methods, such as reactive DC-, MF- or RF magnetron sputtering or the magnetron sputtering of ceramic targets, enables significantly improved precision in the deposition of ceramic layers at an exactly defined rate and homogeneity and also with very good reproducibility.04-26-2012
20120097528Deposition of Material to Form a Coating - The invention relates to apparatus and a method which allows the creation and maintenance of a closed field system in which magnetrons and/or magnet assemblies are provided in a form to create a magnetic field around an area in which the substrate to be coated is located. The method also relates to the steps of cleaning the substrates and applying an adhesive layer prior to the material which is to form the coating.04-26-2012
20090188785Sputtering Targets and Methods for Depositing Film Containing Tin and Niobium - Sputtering targets and sputtering methods for depositing a film that includes tin and niobium. Substrates bearing coatings comprising tin and niobium, for example, low-emissivity coatings including blocker films comprising tin and niobium, or solar control coatings (e.g., conductive oxide coatings) including tin and niobium methods of manufacturing sputtering targets comprising tin and niobium.07-30-2009
20090183986Thin-Film Shape Memory Alloy Device and Method - A thin film device, such as an intravascular stent, is disclosed. The device is formed of a seamless expanse of thin-film (i) formed of a sputtered nitinol shape memory alloy, defining, in an austenitic state, an open, interior volume, having a thickness between 0 5-50 microns, having an austenite finish temperature A07-23-2009
20090250337TUBULAR TARGET HAVING A CONNECTING LAYER ARRANGED BETWEEN THE TARGET TUBE AND THE CARRIER TUBE - A tubular target is provided having a cylindrical carrier tube, at least one target tube arranged on its exterior surface, and a connecting layer arranged between the target tube and the carrier tube. The connecting layer is electrically conductive and has a wetting degree of >90%.10-08-2009
20090166186Novel process for fabrication of a sputter deposited fully dense electrolyte layer embedded in a high performance membrane electrolyte assembly of solid oxide fuel cell - The innovation process describes the process and results for fabrication of a magnetron sputter deposited fully dense electrolyte layer (8YSZ/GDC/LSGM) embedded in a high performance membrane electrolyte assembly (MEA) (Unit Cell) of Solid Oxide Fuel Cell. A single cell with airtight electrolyte layer (8YSZ/GDC/LSGM) is prepared via thin film technique of magnetron sputter deposition, combined with SOFC-MEA processing methods (such as tape casting, lamination, vacuum hot pressing, screen printing, spin coating, and plasma spray coating) and sintering optimization conditions. The gas permeability of the electrolyte layer is below 1×1007-02-2009
20080210550Vacuum Coating System and Method for Vacuum Coating - The invention provides a device for the vacuum coating of substrates which comprises a vacuum chamber, an apparatus for holding at least one substrate, at least one first coating region of the vacuum chamber with an apparatus for plasma pulse-induced chemical vapor deposition (PICVD) and at least one second coating region of the vacuum chamber with at least one apparatus for sputter coating, as well as a transport apparatus for transporting the substrate into the coating regions.09-04-2008
20110168546MATERIAL OF ELECTRODE FOR ELECTROLYSIS, ELECTRODE FOR ELECTROLYSIS AND MANUFACTURING METHOD OF THE ELECTRODE - There are disclosed a material of an electrode for electrolysis which can highly efficiently generate an ozone water by the electrolysis of water, an electrode for electrolysis, and a manufacturing method of the electrode for electrolysis. The material of the electrode for electrolysis which is an alloy comprising platinum and silver and having a concentration of silver from 1 wt % or more to 50 wt % or less is used as a surface layer formed on the surface of a base member, whereby in the electrolysis by the electrode for electrolysis, active oxygen species such as ozone and OH radicals can efficiently be generated with a low current density.07-14-2011
20090283401METHOD FOR MANUFACTURING LIQUID CRYSTAL DEVICE - A method for manufacturing a liquid crystal device that has a liquid crystal layer interposed between a pair of substrates which oppose each other and an alignment film which is formed on an inner face side of at least one of the substrates includes forming an inorganic alignment layer that has a plurality of columnar structures in which crystals grow in an oblique direction with respect to a normal line of the substrate by using sputtering equipment in which a pair of targets oppose each other with a plasma forming region interposed therebetween, by emitting an alignment film material that is made of an inorganic material in an oblique direction onto the substrate from the targets, and forming an organic alignment layer that is a monomolecular film made of an organic material chemically bonded with the inorganic alignment layer on a surface of the inorganic alignment layer by treating the surface of the inorganic alignment layer with a silane coupling agent that has an alkyl group, wherein a pretilt angle of a liquid crystal molecule is set to a desired angle by selecting the silane coupling agent by the number of carbon atoms.11-19-2009
20110168547METHOD FOR PRODUCING A TRANSPARENT AND CONDUCTIVE METAL OXIDE LAYER BY HIGHLY IONIZED PULSED MAGNETRON SPUTTERING - A method for producing a transparent and conductive metal oxide layer on a substrate, includes atomizing at least one component of the metal oxide layer by highly ionized, high power pulsed magnetron sputtering to condense on the substrate. The pulses of the magnetron have a peak power density of more than 1.5 kW/cm07-14-2011
20080251376Vacuum Processing Device and Method of Manufacturing Optical Disk - To provide a vacuum treatment device capable of reducing the occurrence of the tilt and deformation of treated materials by suppressing the heating of a substrate by continuous spattering in a vacuum. This vacuum treatment device is characterized by comprising a main chamber capable of being vacuated in a vacuum state, a load lock mechanism carrying disk-like treated materials into and out of the main chamber while holding the vacuum state of the main chamber, a horizontal rotary carrying table disposed in the main chamber, having a plurality of susceptors exchanging the disk-like treated materials with the load lock mechanism for mounting, rotated about a rotating shaft, and forming a carrying route for the disk-like treated materials, a plurality of film-forming chambers for forming a multi-layer film on the disk-like treated materials disposed in the main chamber along a circumference about the rotating shaft and carried by the rotary carrying table, and cooling mechanism disposed between the film-forming chambers and cooling the disk-like treated materials.10-16-2008
20080283389Method for Manufacturing Chalcopyrite Thin-Film Solar Cell - A method for fabricating a chalcopyrite-type thin film solar cell includes a first step of forming onto a Mo electrode layer 11-20-2008
20120168301TRANSPARENT BARRIER FILM AND METHOD FOR PRODUCING THE SAME - A transparent barrier film, includes a transparent thermoplastic film and at least one permeation barrier film. The permeation barrier film includes a chemical compound of the elements zinc, tin and oxygen. A mass fraction of zinc is 5% to 70%. Furthermore, a method is disclosed for the production of a barrier film of this type.07-05-2012
20080271990LANTHANOID ALUMINATE FILM FABRICATION METHOD - A method of fabricating by co-sputtering deposition a lanthanoid aluminate film with enhanced electrical insulativity owing to suppression of deviation in composition of the film is disclosed. Firstly within a vacuum chamber, hold two separate targets, one of which is made of lanthanoid aluminate (LnAlO11-06-2008
20100276274Heat treatable coated article with zinc oxide inclusive contact layer(s) - A coated article is provided so as to have a fairly high visible transmission (TY or T11-04-2010
20130118894SILVER SELENIDE SPUTTERED FILMS AND METHOD AND APPARATUS FOR CONTROLLING DEFECT FORMATION IN SILVER SELENIDE SPUTTERED FILMS - Method and apparatus for sputter depositing silver selenide and controlling defect formation in and on a sputter deposited silver selenide film are provided. A method of forming deposited silver selenide comprising both alpha and beta phases is further provided. The methods include depositing silver selenide using sputter powers of less than about 200 W, using sputter power densities of less than about 1 W/cm05-16-2013
20080308412MULTITARGET SPUTTER SOURCE AND METHOD FOR THE DEPOSITION OF MULTI-LAYERS - Apparatus and methods for sputtering are provided, which are useful for sputtering high magnetization saturation materials. In one embodiment, a plurality of sputtering target arrangements are arranged concentrically, wherein independent magnetic fields can be generated at least partially above the respective target arrangements. One or several target arrangements can include respective upper and lower parts that are spaced from one another but arranged in essentially parallel planes. Methods include co-sputtering from multiple target arrangements to produce sputtered alloy layers on a substrate, as well as alternately sputtering from different target arrangements to produce a plurality of sputtered layers on the substrate.12-18-2008
20110005921METHOD FOR MAKING A THIN LAYER SOLID OXIDE FUEL CELL, A SO-CALLED SOFC - The present disclosure relates to a method for making a thin layer solid oxide fuel cell including at least an anode, an electrolyte and a cathode including at least the following steps of: 01-13-2011
20090183984Seed Film Forming Method, Plasma-Assisted Film Forming System and Storage Medium - The invention is related to A seed film forming method capable of forming a seed film in recesses without forming overhangs.07-23-2009
20120067717Method of co-sputtering alloys and compounds using a dual C-MAG cathode arrangement and corresponding apparatus - Certain example embodiments of this invention relate to techniques for sputter-depositing a thin film(s) including two or more materials using targets such as rotating cylindrical sputtering targets, including a method and apparatus. Magnet bar assemblies in first and second adjacent sputtering targets are oriented differently. The different orientations of the magnet bar assemblies allows material from the second target to be sputtered onto the first target, or vice versa. The mixture of material on the first target, including sputtering material from both the first and second targets, is then sputtered onto a substrate to form a sputter-deposited thin film that includes a mixture of the sputtering materials from the targets.03-22-2012
20090101494Method for Producing Internal Antenna with Anti-Electromagnetic Interference Property Through Vacuum Process - A method for producing an internal antenna with an anti-electromagnetic interference property by performing a vacuum process, which includes (1) performing a surface pretreatment process on an insulating substrate to clean the surface thereof, (2) placing the substrate into a vacuum chamber, and performing a first plasma bombardment by using a conductive target material; (3) placing the substrate into another vacuum chamber, and performing a second plasma bombardment by using a passivation target material; (4) removing a certain part of the passivation layer and the conductive layer, such that a planar antenna pattern is remained with a certain distance spaced apart from the surrounding passivation layer and conductive layer. The conductive layer and the passivation layer cover the surface of the substrate for completely shielding the electromagnetic interference, and meanwhile, the planar shape of the antenna saves the cost and the available space within the housing.04-23-2009
20090152100Thick metal interconnect with metal pad caps at selective sites and process for making the same - The present invention relates to a high power IC (Integrated Circuit) semiconductor device and process for making same. More particularly, the invention encompasses a high conductivity or low resistance metal stack to reduce the device R-on which is stable at high temperatures while in contact with a thick aluminum wire-bond that is required for high current carrying capability and is mechanically stable against vibration during use, and process thereof. The invention further discloses a thick metal interconnect with metal pad caps at selective sites, and process for making the same.06-18-2009
20090152102TRANSPARENT OPTICAL FILM AND METHOD OF FORMING THE SAME - A method of forming a transparent optical film includes the step of forming an optical film that is transparent on a substrate by a reactive sputtering process using a Mg—Si metal target in an atmosphere into which a gas of a fluorine-containing compound is introduced and in which the total pressure is adjusted to 8 Pa or more.06-18-2009
20090152101Processes for Fabrication of Gold-Aluminum Oxide and Gold-Titanium Oxide Nanocomposites for Carbon Monoxide Removal at Room Temperature - The present invention provides methods of making nanocomposite materials for carbon monoxide removal. Methods of using the nanocomposite materials for carbon monoxide removal are also provided.06-18-2009
20090250338DIAMONDLIKE CARBON HARD MULTILAYER FILM FORMED BODY AND METHOD FOR PRODUCING THE SAME - A diamondlike carbon hard multilayer formed film body comprises a substrate, a diamondlike carbon film mainly composed of diamondlike carbon, and an intermediate layer between the substrate and the diamondlike carbon film. The diamondlike carbon film is composed of, in order from the substrate side, a first diamondlike carbon film and a second diamondlike carbon film. The surface hardness of the first diamondlike carbon film is within the range from not less than 10 GPa to not more than 40 GPa based on nanoindentation test, and the surface hardness of the second diamondlike carbon film is within the range from more than 40 GPa to not more than 90 GPa based on nanoindentation test. According to such a structure, even if a DLC multilayer containing high-hardness DLC film on the outermost surface side is formed in a thickness of not less than about 3 μm on a substrate of a wide range extending from a material with high hardness such as cemented carbide to an iron-based material with low hardness, excellent adhesion to both the substrate and the DLC film can be ensured in addition to excellent wear resistance.10-08-2009
20100200395Techniques for depositing transparent conductive oxide coatings using dual C-MAG sputter apparatuses - Certain example embodiments relate to techniques for depositing transparent conductive oxide (TCO) coatings using dual C-MAG sputtering apparatuses. Certain example embodiments provide a closed-loop system with the following process conditions. About 90% of the oxygen gas provided to the apparatus is provided via a top gas inlet. Pressure within the apparatus is increased to about 1008-12-2010
20090242389METHOD FOR MANUFACTURING MAGNETIC RECORDING MEDIUM - A method for manufacturing a magnetic recording medium including a nonmagnetic substrate, an intermediate layer over the nonmagnetic substrate, and a granular magnetic layer for recording information, disposed on the intermediate layer. The method includes sputtering a Co alloy, a Ti oxide, a Si oxide and a Co oxide simultaneously to form the granular magnetic layer containing Co alloy magnetic particles and an oxide magnetically separating the magnetic particles.10-01-2009
20090250339INFORMATION RECORDING MEDIUM AND METHOD FOR PRODUCING THE SAME - The information recording medium of the present invention comprises at least one of the following oxide-based material layers: (I) an oxide-based material layer containing Zr, at least one element selected from the group GL1 consisting of La, Ga and In, and oxygen (O); (II) an oxide-based material layer containing M1 (where M1 is a mixture of Zr and Hf, or Ht), at least one element selected from the group GL2 consisting of La, Ce, Al, Ga, In, Mg and Y, and O; (III) an oxide-based material layer containing at least one element selected from the group GM2 consisting of Zr and Hf, at least one element selected from the group GL2, Si, and O; and (IV) an oxide-based material layer containing at least one element selected from the group GM2, at least one element selected from the group GL2, Cr, and O. This oxide-based material layer can be used, for example, as a dielectric layer.10-08-2009
20090255803PLASMA GENERATING APPARATUS, DEPOSITION APPARATUS, AND DEPOSITION METHOD - A plasma generating apparatus emits a plasma beam from a plasma gun and thereafter deforms the emitted plasma beam by a pair of opposing first magnets arranged to sandwich the plasma beam. The plasma generating apparatus includes at least one second magnet which is arranged between the plasma gun and the first magnets, includes a hole through which the plasma beam passes and a magnet portion of it extending outside from the hole in a direction perpendicular to the plasma beam, and forms a magnetic field having magnetic lines reaching outside from the hole or reaching the hole from outside. At least one second magnet concentrates the emitted plasma beam.10-15-2009
20090260976MAGNETRON SPUTTERING APPARATUS AND PRODUCTION METHOD OF THIN FILM - To form a LaB10-22-2009
20110139606METHOD OF MANUFACTURING MAGNETORESISTIVE ELEMENT, SPUTTER DEPOSITION CHAMBER, APPARATUS FOR MANUFACTURING MAGNETORESISTIVE ELEMENT HAVING SPUTTER DEPOSITION CHAMBER, PROGRAM AND STORAGE MEDIUM - The magnetic anisotropy of a magnetic layer in a spin valve tunnel magnetoresistive element or giant magnetoresistive element is enhanced. Deposition of the magnetic layer is performed by making sputtering particles obliquely incident on a substrate from a certain incident direction at a certain incident angle.06-16-2011
20100264018AG BASE SPUTTERING TARGET AND PROCESS FOR PRODUCING THE SAME - An Ag sputtering target 10-21-2010
20100264017METHOD FOR DEPOSITING CERAMIC THIN FILM BY SPUTTERING USING NON-CONDUCTIVE TARGET - A method for depositing a ceramic thin film by sputtering is provided to increase deposition rate of the ceramic thin film and to enhance the uniformity of a deposited thin film, which are accomplished by positioning a nonconductive target within a vacuum chamber, and applying an AC/RF power to the target to produce plasma within the chamber, followed by the application of a hybrid power in combination of an AC/RF power and a DC power to the target to proceed a sputtering process inside the vacuum chamber, such that the ceramic thin film is deposited on a substrate placed in the vacuum chamber.10-21-2010
20100155230Method of Fabricating Bubble-Type Micro-Pump - A manufacturing method of a bubble-type micro-pump is provided. At least a bubble-generating unit is provided on the bubble-generating section. Because of the varied surface energies on the top of the bubble-generating section, the varied backfilling velocities of the fluid of the front end and the rear end cause fluid moving when a bubble vanishes. The top surface of the bubble-generating section is subjected to a particular surface treatment to form a surface energy gradient. Examples of surface treatment include sputtering a thin film with varied densities or thickness, radiating one or multi-layer thin films by a laser beam, etc.06-24-2010
20090314634ELECTROMAGNETIC NOISE SUPPRESSOR, STRUCTURE WITH ELECTROMAGNETIC NOISE SUPPRESSING FUNCTION AND THEIR MANUFACTURING METHODS - An electromagnetic noise suppressor of the present invention has magnetic resonance frequency of 8 GHz or higher, and the imaginary part of complex magnetic permeability at 8 GHz is higher than the imaginary part of complex magnetic permeability at 5 GHz. Such an electromagnetic noise suppressor is capable of achieving sufficient electromagnetic noise suppressing effect over the entire sub-microwave band. The electromagnetic noise suppressor can be manufactured by forming a composite layer on the surface of a binding agent through physical deposition of a magnetic material on the binding agent. The structure with an electromagnetic noise suppressing function of the present invention is a printed wiring board, a semiconductor integrated circuit or the like that is covered with the electromagnetic noise suppressor on at least a part of the surface of the structure.12-24-2009
20090294279SPUTTERING APPARATUS AND FILM FORMING METHOD - A sputtering apparatus for performing a film forming process on a substrate surface of a disk-like substrate while rotating the substrate around a rotation axis line, the sputtering apparatus including a chamber, a table that rotates the substrate around the rotation axis line, and a sputtering cathode that has a cathode surface facing the substrate. Assuming that a distance between the rotation axis line and a peripheral edge of the substrate is R, a distance between the rotation axis line and a center point of the cathode surface is OF, and a height from the substrate surface to the center point of the cathode surface is TS, the following relationship is substantially satisfied:12-03-2009
20100187097METHOD OF PLASMA VAPOUR DEPOSITION - A method induces plasma vapour deposition of metal into a recess in a workpiece. The method achieves re-sputtering of the metal at the base of the recess with a sputter gas by utilising a mixture of Ar and He and/or Ne as the sputter gas with a ratio of He and/or Ne:Ar of at least about 10:1.07-29-2010
20100193351METHOD FOR PREPARING TRANSPARENT CONDUCTING FILM COATED WITH AZO/AG/AZO MULTILAYER THIN FILM - A method for preparing a transparent conducting film coated with an AZO/Ag/AZO multilayer thin film with low resistivity and high light transmittance, and a transparent conducting film produced by the same method. The method for preparing a transparent conducting film coated with an AZO/Ag/AZO multilayer thin film, includes (a) forming a primary AZO thin film on a substrate using an AZO target doped with Al through a sputtering method; (b) depositing Ag on the primary AZO thin film using the sputtering method to form a deposited Ag layer; and (c) forming a secondary AZO thin film on the Ag thin film using the AZO target doped with Al through a sputtering method.08-05-2010
20090078564TARGET STRUCTURE AND TARGET HOLDING APPARATUS - A target structure is provided which enables sputtering of gallium or gallium-containing material in a molten state to be achieved even when the film deposition rate is increased by increasing the input electric power. A sputtering apparatus including such a target structure is also provided. The target structure includes: a holding section formed from a metal material; and gallium or gallium-containing material placed on the holding section, wherein a surface of the holding section which forms an interface with the gallium or gallium-containing material is formed thereon with a thin film having an angle of contact of not more than 30° to the gallium or gallium-containing material in a molten state. The sputtering apparatus includes this target structure.03-26-2009
20080314737Methods of Making Molybdenium Titanium Sputtering Plates and Targets - Molybdenum titanium sputter targets are provided. In one aspect, the targets are substantially free of the β(Ti, Mo) alloy phase. In another aspect, the targets are substantially comprised of single phase β(Ti, Mo) alloy. In both aspects, particulate emission during sputtering is reduced. Methods of preparing the targets, methods of bonding targets together to produce large area sputter targets, and films produced by the targets, are also provided.12-25-2008
20100213048MAGNETRON SPUTTERING CATHODE, MAGNETRON SPUTTERING APPARATUS, AND METHOD OF MANUFACTURING MAGNETIC DEVICE - To provide a magnetron sputtering cathode, a magnetron sputtering apparatus, and a method of manufacturing a magnetic device, capable of generating a leakage magnetic field sufficiently large to form a magnetic tunnel necessary for discharge on the surface of a target even when the target is a magnetic body and thick and a ferromagnetic body is used as the target. The magnetron sputtering cathode of the present invention includes a target having a second annular groove provided on the sputtering surface of the target, a third annular projection provided on the non-sputtering surface of the target, a fourth annular groove provided outside the third annular projection on the non-sputtering surface, and a fourth annular projection provided outside the fourth annular groove on the non-sputtering surface. Further, the magnetron sputtering cathode includes a first magnet and a second magnet 08-26-2010
20100243429METHOD OF MANUFACTURING IMPLANT AND METHOD OF MANUFACTURING ARTIFICIAL DENTAL ROOT - A method for producing an implant whose surface is roughened by the sandblast method using shot material containing fluoroapatite. Fluoroapatite, compared to hydroxyapatite, has poor biocompatibility, but is superior in hardness. It also has a property of being dissolved in acid. As a result, by the sandblast method using shot material containing fluoroapatite, the surface roughening is performed quite effectively, and shot materials remained on the surface can easily be removed by acid.09-30-2010
20110000783ROTARY MAGNET SPUTTERING APPARATUS - Provided is a rotary magnet sputtering apparatus which includes a plasma shielding member and an outer wall connected to the ground and which has a series resonant circuit and a parallel resonant circuit between the plasma shielding member and the outer wall. The series resonant circuit has a very low impedance only at its resonant frequency while the parallel resonant circuit has a very high impedance only at its resonant frequency. With this configuration, the impedance between substrate RF power and the plasma shielding member becomes very high so that it is possible to suppress the generation of plasma between a substrate 01-06-2011
20090065351Method and apparatus for deposition - A deposition system supplies a continuous flow of process gases and sequentially selects among the flowing process gases for delivery to a reaction chamber. In the reaction chamber the delivered process gas acts as an ionizing species and thereby effects the deposition of a target substance upon a substrate. Gases not selected for delivery to the reaction chamber are swept away by a vacuum pump. By making a plurality of process gases continuously available, sequentially selecting among the available process gases, and pumping unused gases away before they enter the reaction chamber, such a system and method provides for continuous, sequential, uninterrupted deposition of a variety of substances, while maintaining desired flow rates and chamber pressures.03-12-2009
20100133090FILM FORMING METHOD BY SPUTTERING AND SPUTTERING APPARATUS THEREOF - To provide a sputtering apparatus that enables oblique film forming by arranging a target and a substrate so as to allow sputtered particles emitted from the target to obliquely enter the substrate selectively, and can form a magnetic film having high uniaxial magnetic anisotropy uniformly and compactly. A sputtering apparatus includes a cathode having a sputtering target supporting surface, the cathode being provided with a rotation axis about which the sputtering target supporting surface rotates, and a stage having a substrate supporting surface, the stage being provided with a rotation axis about which the substrate supporting surface rotates, and the sputtering apparatus is constituted such that the sputtering target supporting surface and the substrate supporting surface face to each other, and are rotatable independently about respective rotation axes. Further, it is constituted such that a shield plate is arranged between the sputtering target supporting surface and the substrate supporting surface, and is rotatable independently from the cathode and the stage.06-03-2010
20100133089MAGNETRON SPUTTERING APPARATUS AND METHOD FOR MANUFACTURING THIN FILM - In the present invention, in forming a LaB06-03-2010
20100224482DEPOSITION APPARATUS AND ELECTRONIC DEVICE MANUFACTURING METHOD - A deposition apparatus includes a shutter storage unit which is connected to a processing chamber via an opening and stores a shutter in the retracted state into an exhaust chamber, and a shield member which is formed around the opening of the shutter storage unit and covers the exhaust port of the exhaust chamber. The shield member has, at a position of a predetermined height between the opening of the shutter storage unit and a deposition unit, the first exhaust path which communicates with the exhaust port of the exhaust chamber.09-09-2010
20100187096MANUFACTURING METHOD OF AN ELECTRON-EMITTING DEVICE, AND MANUFACTURING METHOD OF A LANTHANUM BORIDE FILM - A lanthanum boride film is deposited on a substrate by means of a sputtering method while moving the substrate and a target of lanthanum boride relative to each other in a state where the substrate and the target are arranged in opposition to each other. When a mean free path of sputtering gas molecules at the time of deposition is λ (mm) and a distance between the substrate and the target is L (mm), a ratio of L/λ is set to a value equal to or larger than 20. A value which is obtained by dividing a discharge power value by an area of the target is set to be in a range of from 1 W/cm07-29-2010
20100044214PHYSICAL VAPOUR DEPOSITION COATING DEVICE AS WELL AS A PHYSICAL VAPOUR DEPOSITION METHOD - The invention relates to a physical vapour deposition coating device (02-25-2010
20100038232HARD COATING, TARGET FOR FORMING HARD COATING, AND METHOD FOR FORMING HARD COATING - The present invention attempts to provide a hard coating which has excellent hardness and lubricity. Such attempt has been completed by providing a hard coating comprising02-18-2010
20090127100FET-BASED SENSOR FOR DETECTING REDUCING GASES OR ALCOHOL, AND ASSOCIATED PRODUCTION AND OPERATIONG METHOD - An FET-based gas sensor includes at least one field-effect transistor and at least one gas-sensitive layer and a reference layer. Any changes in work function occurring when materials of the layers are exposed to a gas are used to trigger the field-effect structures. The gas-sensitive layer includes a metal oxide having an oxidation catalyst on its surface and accessible to the measured gas.05-21-2009
20110253525THIN FILM SHAPE MEMORY ALLOY DEVICE AND METHOD - A thin film device, such as an intravascular stent, is disclosed. The device is formed of a seamless expanse of thin-film (i) formed of a sputtered nitinol shape memory alloy, defining, in an austenitic state, an open, interior volume, having a thickness between 0.5-50 microns, having an austenite finish temperature A10-20-2011
20100320077METHOD FOR PRODUCTION OF CUBIC BORON NITRIDE-CONTAINING FILMS - A method of forming cubic boron nitride-containing films, wherein, to form a cubic boron nitride-containing film by means of the magnetron sputtering method using a boron carbide-containing target, said film is formed under the following conditions; (a) the power input is pulsed; (b) the input power pulse width is not more than 100 μs; and (c) the maximum input power density in the erosion area of said target is at least 0.33 kW/cm12-23-2010
20110114474METHOD AND APPARATUS FOR DEPOSITION OF DIFFUSION THIN FILM - This invention relates to a method and apparatus for deposition of a diffused thin film, useful in the fabrication of semiconductors and for the surface DC-Bias coating of various tools. In order to coat the surface of a treatment object, such as semiconductors, various molded products, or various tools, with a thin film, one or more process factors selected from among a bias voltage, a gas quantity, an arc power, and a sputtering power are continuously and variably adjusted, whereby the composition ratio of the thin film which is formed on the surface of the treatment object not through a chemical reaction but through a physical method is continuously varied, thus manufacturing a thin film having high hardness. The composition ratio of the thin film to be deposited is selected depending on the end use thereof, thereby depositing the thin film having superior wear resistance, impact resistance, and heat resistance.05-19-2011
20110253524Aluminum-scandium alloy film applied to vehicle lamps and manufacturing method thereof - An aluminum-scandium (Al—Sc) alloy film applied to vehicle lamps and a manufacturing method thereof are revealed. The Al—Sc alloy film contains a trace of scandium so that both temperature for grain refinement and temperature for recrystallization of the film are increased. This results in a fine and smooth surface of the Al—Sc alloy film and the Al—Sc alloy film has better optical reflectivity. Moreover, the Al—Sc alloy film has high recrystallization temperature and high adhesion strength. After high temperature annealing treatment, the Al—Sc alloy film still has higher corrosion resistance.10-20-2011
20100193350METHOD FOR MAKING CARBON NANOTUBE-BASE DEVICE - A method for making a carbon nanotube-based device is provided. A substrate having a shadow mask layer to define an unmasked surface area thereon is provided. A sputter source is disposed on the shadow mask layer. The sputter source is configured for supplying a catalyst material and depositing the catalyst material onto the substrate. A catalyst layer including at least one catalyst block is formed on the substrate. A thickness of the at least one catalyst block is gradually decreased from one end to another opposite end thereof. The at least one catalyst block has a region with a thickness proximal or equal to an optimum thickness. A carbon source gas is introduced. At least one carbon nanotube array extending from the catalyst layer using a chemical vapor deposition process is formed. The at least one carbon nanotube array is arc-shaped, and bend in a direction of deviating from the region.08-05-2010
20110094876Germanium-containing vacuum coating for noble-metal components - The present invention relates to a method of germanium-containing vacuum electroplating for noble-metal components, whose steps comprising: (1) fabricating the components, (2) surface layer treatment, (3) germanium coating, (4) titanium coating, (5) gasification and (6) product assembly, whereby to amply reduce environmental pollution and to add germanium and titanium elements to noble metals, and to help enhancing user's health by the application of the physical characteristics of said germanium and titanium elements so as to increases the added-value to the noble-metal products and broaden the scope of their application.04-28-2011
20080217162Method to Deposit a Coating By Sputtering - The invention relates to a method to deposit a coating on a substrate by sputtering using a sputter target comprising a doping element whereby the deposited coating is substantially free of the doping element. The invention further relates to a sputter target having as sputter material a non-conductive main component and a semiconductive or conductive doping element.09-11-2008
20100320076Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier - A high performance TMR sensor is fabricated by incorporating a tunnel barrier having a Mg/MgO/Mg configuration. The 4 to 14 Angstroms thick lower Mg layer and 2 to 8 Angstroms thick upper Mg layer are deposited by a DC sputtering method while the MgO layer is formed by a NOX process involving oxygen pressure from 0.1 mTorr to 1 Torr for 15 to 300 seconds. NOX time and pressure may be varied to achieve a MR ratio of at least 34% and a RA value of 2.1 ohm-um12-23-2010
20090277782Silicon Oxynitride Coating Compositions - Silicon oxynitride compositions are described herein. These compositions are typically deposited onto substrates using a nitrogen plasma-based, reactive sputtering method. Depending on their composition, these coatings can be used for field emission suppression, dielectric applications, reflection control, and surface passivation.11-12-2009
20100187098SPUTTER TARGET AND BACKING PLATE ASSEMBLY - A method for aligning the sputter target onto a backing plate having a peripheral arcuate-shaped flange on its bonding surface to provide an aligned and uniform solder bonded interface; and the sputter target/backing plate assembly so produced.07-29-2010
20110073463METHODS FOR STABLE PROCESS IN A REACTIVE SPUTTERING PROCESS USING ZINC OR DOPED ZINC TARGET - Embodiments disclosed herein generally relate to a method for seasoning a sputtering target in-situ with a substrate to be processed. New semiconductor compounds containing oxygen, nitrogen, and an element such as zinc, cadmium, tin, indium, and gallium are beginning to replace silicon as the material for active channels in TFTs. The new semiconductor compounds may be deposited by a reactive sputtering process. During the sputtering process, reactive gas reacts with the metal from the sputtering target and deposits on the substrate. Some of the reactive gas may react at the surface and lead to a buildup of a compound at the target surface. Because oxygen and nitrogen are quite reactive, an oxide or nitride compound may develop at the target surface. The oxide or nitride may be removed by seasoning the sputtering target. The seasoning may occur while the substrate is within the processing chamber.03-31-2011
20100000857COPPER SPUTTERING TARGET MATERIAL AND SPUTTERING METHOD - A copper sputtering target material includes a sputter surface formed of a copper material including one crystal orientation plane and other crystal orientation planes. By application of accelerated specified inert gas ions, the one crystal orientation plane emits sputter particles with energy greater than energy of sputter particles sputtered out of the other crystal orientation planes. The occupying proportion of the one crystal orientation plane to the sum of the one crystal orientation plane and the other crystal orientation planes is not less than 15%.01-07-2010
20100252418HOT TILE SPUTTERING SYSTEM - A system and method for sputtering a coating onto a glass substrate in a vacuum deposition chamber includes providing a backing plate with a separating element disposed at the backing plate. At least one target element or tile is disposed on a surface of the separating element, wherein an expansion gap is provided to allow for expansion of the target relative to the separating element during the sputtering process. The method includes sputtering material from the target and heating the target to a substantially elevated temperature during the sputtering process. The separating element may be a sheet having a low-coefficient of friction surface, and the target may be disposed on the low-coefficient of friction surface of the separating element. The separating element may thermally insulate the target from the backing plate, whereby the target may be heated to a substantially greater temperature than the backing plate during the sputtering process.10-07-2010
20120055784PREPARATION METHOD OF PALLADIUM ALLOY COMPOSITE MEMBRANE FOR HYDROGEN SEPARATION - Disclosed herein is a method of preparing a palladium alloy composite membrane for hydrogen separation, including (a) providing a first metal coating layer on a porous support using an electroplating process; (b) providing a palladium coating layer on the first metal coating layer using a dry plating process; and (c) heat treating the palladium coating layer to form an alloy layer of palladium and the first metal.03-08-2012
20120000766METHOD FOR MANUFACTURING SCANDIUM ALUMINUM NITRIDE FILM - A method for manufacturing a scandium aluminum nitride film includes: sputtering a scandium aluminum alloy target under atmosphere including nitrogen gas so that a thin film is deposited on a substrate. Since the scandium aluminum nitride film is manufactured with using one alloy target, a composition of the film is maintained even when the sputtering time is long. Further, the above method is capable of being performed by a mass production sputtering apparatus.01-05-2012
20120006676POTASSIUM/MOLYBDENUM COMPOSITE METAL POWDERS, POWDER BLENDS, PRODUCTS THEREOF, AND METHODS FOR PRODUCING PHOTOVOLTAIC CELLS - A method for producing a composite metal powder according to one embodiment of the invention may comprise: Providing a supply of molybdenum metal powder; providing a supply of a potassium compound; combining the molybdenum metal powder and the potassium compound with a liquid to form a slurry; feeding the slurry into a stream of hot gas; and recovering the composite metal powder.01-12-2012
20120205237METHOD FOR FORMING GAPLESS SEMICONDUCTOR THIN FILM - Provided is a method for forming a gapless semiconductor thin film. The method includes the steps of providing a lead palladium oxide target, arranging the lead palladium oxide target in a vacuum container and providing a substrate, and forming a lead palladium oxide thin film on the substrate using the lead palladium oxide target.08-16-2012
20120152727Alkali Metal Deposition System - A deposition system for alkali and alkaline earth metals may include a metal sputter target including cooling channels, a substrate holder configured to hold a substrate facing and parallel to the metal sputter target, and multiple power sources configured to apply energy to a plasma ignited between the substrate and the metal sputter target. The target may have a cover configured to fit over the target material, the cover may include a handle for automated removal and replacement of the cover within the deposition system, and a valve for providing access to the volume between the target material and the cover for pumping, purging or pressurizing the gas within the volume. Sputter gas may include noble gas with an atomic weight less than that of the metal target.06-21-2012
20110067996PVD METHOD FOR DEPOSITING A COATING ONTO A BODY AND COATED BODIES MADE THEREOF - A method of making a coated body including a coating and a substrate where, onto said substrate, a coating is deposited, using a PVD deposition process. The coating includes a nitride, carbide, oxide, boride or mixtures thereof, of one or more elements selected from groups IVb, Vb, VIb of the periodic table and Al, Y and Si. The deposition process includes at least one sequence of varying the substrate bias voltage, while maintaining the active targets. The sequence of varying the substrate bias voltage includes a subsequence S03-24-2011
20110042200METHOD OF DEPOSITING AMORPHUS ALUMINIUM OXYNITRIDE LAYER BY REACTIVE SPUTTERING OF AN ALUMINIUM TARGET IN A NITROGEN/OXYGEN ATMOSPHERE - A method of depositing an amorphous layer of AlON includes providing an aluminium sputter target in a chamber, exposing the target and chamber to O02-24-2011
20100096255GAP FILL IMPROVEMENT METHODS FOR PHASE-CHANGE MATERIALS - Methods and apparatus are provided for depositing phase-change materials. In one embodiment, a method is provided for processing a substrate including positioning a substrate in a processing chamber having a phase change material-based target coupled to a first power source, one or more coils coupled to a second power source, a substrate support coupled to a third power source, providing a processing gas to the processing chamber, biasing the phase change material-based target with continuous DC or pulsed DC power, applying power to the coils to generate an inductively coupled plasma, applying a bias to the substrate support, sputtering material from the target, ionizing the sputtered materials, and depositing the sputtered materials on the substrate surface.04-22-2010
20090134015ENHANCED OXYGEN NON-STOICHIOMETRY COMPENSATION FOR THIN FILMS - A method of manufacturing a magnetic recording medium, including the step of reactively or non-reactively sputtering at least a first data storing thin film layer over a substrate from a sputter target. The sputter target is comprised of cobalt (Co), platinum (Pt), a first metal oxide further comprised of a first metal and oxygen (O) and, when non-reactively sputtering, a second metal oxide. The first data storing thin film layer is comprised of cobalt (Co), platinum (Pt), and a stoichiometric third metal oxide comprising the first metal and oxygen (O). During sputtering, any non-stoichiometry of the third metal oxide in the first data storing thin film layer is compensated for using oxygen (O) from the second metal oxide in the sputter target, or using oxygen (O) from the oxygen-rich gas atmosphere. The first metal is selected from boron (B), silicon (Si), aluminum (Al), tantalum (Ta), niobium (Nb), hafnium (Hf), zirconium (Zr), titanium (Ti), tin (Sn), lanthanum (La), tungsten (W), cobalt (Co), yttrium (Y), chromium (Cr), cerium (Ce), europium (Eu), gadolinium (Gd), vanadium (V), samarium (Sm), praseodymium (Pr), manganese (Mn), iridium (Ir), rhenium (Re), nickel (Ni), and zinc (Zn). The sputter target is further comprised of chromium (Cr) and/or boron (B).05-28-2009
20090134014Method for forming a transparent electroconductive film - A transparent electroconductive film having a low resistivity is provided. In a film-forming method of the present invention, a transparent electroconductive film is formed on a surface of a substrate by sputtering, in a vacuum atmosphere, a target in which ZnO is a main component and Al05-28-2009
20090134013METHOD FOR FORMING A TRANSPARENT ELECTROCONDUCTIVE FILM - A transparent electroconductive film having a low resistivity is provided. In a film-forming method of the present invention, a transparent electroconductive film is formed on a surface of a substrate by sputtering, in a vacuum atmosphere, a target in which ZnO is a main component and Al05-28-2009
20100206717METHOD AND APPARATUS FOR MANUFACTURING MAGNETIC RECORDING MEDIUM - The present invention provides a method for manufacturing a magnetic recording medium by mounting a substrate for film formation on a carrier, sequentially transporting said substrate into a plurality of connected chambers, and forming at least a magnetic film and a carbon protective film on said substrate for film formation within said chambers, wherein said method comprises a step of forming a metal film on a carrier surface, which is performed following a step of removing a magnetic recording medium from said carrier following film formation, but prior to a step of mounting a substrate for film formation on said carrier.08-19-2010
20120211353METHOD OF COATING METAL SHELL WITH PURE WHITE FILM - A method of coating a pure white film includes a first step of providing a metal shell, a second step of forming a bonding layer on a surface of the metal shell by a first magnetron sputtering process, and a third step of forming a pure white layer on a surface of the bonding layer by a second magnetron sputtering process. The bonding layer includes chromium nitride. In the second process, aluminum and chromium corporately serves as targets. Oxygen serves as a reactive gas. A ratio of a bombarding power of the aluminum to that of the chromium is about 12:1. A bias voltage ranges from 180 volts to 220 volts. The second magnetron sputtering process lasts for about 58 to 62 minutes and goes on under a temperature ranged from 180° C. to 220° C. And the pure white layer includes aluminum oxide and chromium oxide.08-23-2012
20120247949FILM FORMING METHOD, RESPUTTERING METHOD, AND FILM FORMING APPARATUS - A film forming method includes depositing a metal thin film on a target substrate by generating an inductively coupled plasma in a processing chamber while introducing a plasma generating gas in the processing chamber with the substrate disposed on a placing table, by supplying DC power to a metal target from a DC power source, and by applying high-frequency bias to the placing table. A resputtering method includes resputtering the deposited metal thin film by stopping the generating of the inductively coupled plasma, by stopping the power supply from the DC power source, and by applying the high-frequency bias to the placing table while introducing the plasma generating gas in the processing chamber to form a capacitively coupled plasma in the processing chamber and by attracting ions of the plasma generating gas to the target substrate where the metal thin film is deposited.10-04-2012
20090107834CHALCOGENIDE TARGET AND METHOD - A sputtering target for a sputtering chamber comprises a sputtering plate composed of a chalcogenide material comprising an average yield strength of from about 40 MPa to about 120 MPa and a thermal conductivity of at least about 2.8 W/(m·K). In one version the sputtering plate is composed of a chalcogenide material with a stoichiometric ratio that varies by less than about 5% throughout the body of the sputtering plate. In another version, the sputtering plate is composed of a chalcogenide material having an average grain size of at least 20 microns, and an oxygen content of less than 600 weight ppm. The sputtering target is sputtered by applying a pulsed DC voltage to the sputtering target.04-30-2009
20110303528METHOD AND APPARATUS FOR SPUTTERING FILM CONTAINING HIGH VAPOR PRESSURE MATERIAL - A method and an apparatus for sputtering a film containing high vapor pressure material are provided. The apparatus includes a chamber, a sputtering gun installed in the chamber, a complex target disposed on the sputtering gun, and a substrate holder. The complex target includes a main target and a plurality of pellets, and a material of the pellets is at least one high vapor pressure material that is a material with a vapor pressure greater than 1×1012-15-2011
20110303527SUBSTRATE PROCESSING APPARATUS AND APPARATUS AND METHOD OF MANUFACTURING MAGNETIC DEVICE - According to the present invention, it can be switched whether or not to apply a magnetic field to a substrate depending on a material of a film to be formed, and a magnetic layer and a non-magnetic layer can be formed in the same chamber.12-15-2011
20100326817LOW-MAINTENANCE COATINGS, AND METHODS FOR PRODUCING LOW-MAINTENANCE COATINGS - The invention provides a substrate bearing a low-maintenance coating. In some embodiments, the coating includes a low-maintenance film that includes both titanium oxide and tungsten oxide. The invention also provides methods and equipment for depositing such coatings.12-30-2010
20110120855VANADIUM OXIDE THIN FILMS - Thin films of vanadium oxide having exceptionally high metal-insulator transition properties are synthesized by RF sputtering. An Al2O3 substrate is placed in a sputtering chamber and heated to a temperature up to about 550 degrees Celsius. Ar and O05-26-2011
20110209987PRODUCTION OF AMORPHOUS AND CRYSTALLINE SILICON NANOCLUSTERS BY HYDROGEN ENHANCED REACTIVE MAGNETRON SPUTTERING WITHIN GAS AGGREGATION - A nanocluster source constituted of: a cooled aggregation chamber; a magnetron arranged to sputter a target, the magnetron in communication with the cooled aggregation chamber such that sputtered atoms of the target are received within the cooled aggregation chamber; a vacuum source in communication with the cooled aggregation chamber; a source of at least one noble aggregation gas in communication with the cooled aggregation chamber; and a source of hydrogen gas in communication with the cooled aggregation chamber. Advantageously, the hydrogen gas prevents oxidation of the target and silicon film covering a cooled inner surface of the aggregation chamber, and reduces the surface tension of the formed nanoclusters.09-01-2011
20110209986SPUTTERING APPARATUS, SPUTTERING METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD - A sputtering apparatus includes a substrate holder which holds a substrate to be rotatable in the plane direction of the processing surface of the substrate, a substrate-side magnet which is arranged around the substrate and forms a magnetic field on the processing surface of the substrate, a cathode which is arranged diagonally above the substrate and receives discharge power, a position detection unit which detects the rotational position of the substrate, and a controller which controls the discharge power in accordance with the rotational position detected by the position detection unit.09-01-2011
20120325651SPUTTERING APPARATUS AND METHOD OF MANUFACTURING ELECTRONIC DEVICE - It is an object of this invention to prevent a deposited film from adhering to an exhaust chamber so as to suppress the generation of particles. A sputtering apparatus (12-27-2012
20130015056DEPOSITION SYSTEM HAVING IMPROVED TARGET COOLINGAANM Guo; George X.AACI Palo AltoAAST CAAACO USAAGP Guo; George X. Palo Alto CA US - A vacuum processing system includes a vacuum chamber that can contain a workpiece therein, a deposition source unit that provides a material to be deposited on the workpiece in vacuum, and a cooling module in thermal contact with the deposition source unit. The cooling module includes one or more holding wells that can contain a cooling liquid. The cooling module can cool the deposition source unit by a loss of latent heat during the evaporation of the cooling liquid.01-17-2013
20130015057CATHODE SPUTTER DEPOSITION OF A Cu(In,Ga)X2 THIN FILMAANM Perraud; SimonAACI BandolAACO FRAAGP Perraud; Simon Bandol FRAANM Dufourco; JoelAACI PuyooAACO FRAAGP Dufourco; Joel Puyoo FRAANM Gaillard; FredericAACI VoironAACO FRAAGP Gaillard; Frederic Voiron FRAANM Noel; SebastienAACI RivesAACO FRAAGP Noel; Sebastien Rives FRAANM Rouviere; EmmanuelleAACI Saint-EgreveAACO FRAAGP Rouviere; Emmanuelle Saint-Egreve FR - A method and device for the deposition of a film made of a semiconductive material having the formula Cu(In, Ga)X01-17-2013
20090277781MAGNETRON SPUTTERING APPARATUS AND METHOD FOR MANUFACTURING THIN FILM - In the present invention, in forming a LaB11-12-2009
20080237033Osteointegration process for surgical prosthesis - Coatings for osteointegration of surgical prosthesis are made in an Ion Plating Plasma Assisted plant, with a “reactive Magnetron sputtering” source, having a vacuum chamber, sputtering source, for instance a Magnetron, a vacuum connection to the pumping group, plasma, for instance DC, process gases input, a substrate holder biased, bias generator, for instance DC, RF generator, a matching network, and a RF plasma.10-02-2008
20100089744Method for Improving Adhesion of Films to Process Kits - A method includes providing a process chamber including a target, wherein the target has a first coefficient of thermal expansion (CTE); selecting a process kit including a surface layer having a second CTE close to the first CTE; and installing the process kit in the process chamber with the surface layer exposed to the process chamber. A ratio of a difference between the first CTE and the second CTE is less than about 35 percent.04-15-2010
20080230375Sputtering method and sputtering apparatus - The objective of the present invention is to provide a technique capable of easily forming an alloy layer containing an additive metal on an object to provide a concentration gradient in a thickness direction by sputtering in one treatment vessel. That is, the present invention can form a film with the desired concentration, and includes a first film forming process and a second film forming process that changes at least one of, the pressure in the treatment vessel, and the electric power so they are different from the first film forming process, so that the concentration of the additive metal is different from the concentration of the additive metal of the first alloy film.09-25-2008
20080230374ELECTRICAL-DISCHARGE SURFACE-TREATMENT METHOD - An electrode for an electrical-discharge surface-treatment method is molded with a metallic powder or a metallic compound powder having an average grain diameter of 6 micrometers to 10 micrometers. A coat on a surface of a workpiece is formed with a material constituting the electrode or a substance that is generated by a reaction of the material due to a pulse-like electrical discharge. The coat is built up with a material containing metal as a main constituent under conditions of a width of a current pulse for the pulse-like electrical discharge in a range of 50 microseconds to 500 microseconds and a peak of the current pulse equal to or less than 30 amperes.09-25-2008
20080230373METHODS OF FORMING A PHASE-CHANGE MATERIAL LAYER INCLUDING TELLURIUM AND METHODS OF MANUFACTURING A PHASE-CHANGE MEMORY DEVICE USING THE SAME - The present invention provides methods of forming a phase-change material layer including providing a substrate and a chalcogenide target including germanium (Ge), antimony (Sb) and tellurium (Te) at a temperature wherein tellurium is volatilized and antimony is not volatilized, and performing a sputtering process to form the phase-change material layer including a chalcogenide material on the substrate. Methods of manufacturing a phase-change memory device using the same are also provided.09-25-2008
20100038233AG-BI-BASE ALLOY SPUTTERING TARGET, AND METHOD FOR PRODUCING THE SAME - The sputtering target made of a Ag—Bi-base alloy contains Bi in solid solution with Ag. The sputtering target has an intensity of precipitated Bi of 0.01 at %02-18-2010
20130175159METHOD OF MAKING COATED ARTICLES - A method of making a coated article includes providing a substrate; forming a nickel layer on the substrate by magnetron sputtering; forming a titanium layer on the nickel layer by magnetron sputtering; and applying a thermal oxidative treatment to the nickel and titanium layered substrate to form a catalyst layer and a self-cleaning layer. The self-cleaning layer includes metallic titanium, metallic nickel, nickel oxide and titanium dioxide.07-11-2013
20120247950MOLD FOR NANOIMPRINTING, ITS PRODUCTION PROCESS, AND PROCESSES FOR PRODUCING MOLDED RESIN HAVING FINE CONCAVO-CONVEX STRUCTURE ON ITS SURFACE AND WIRE-GRID POLARIZER - To provide a mold for nanoimprinting capable of accurately transcribing a fine concavo-convex structure, available at a low cost and having high durability, its production process, and processes for producing a molded resin having a fine concavo5 convex structure on its surface having the fine concavo-convex structure of the mold accurately transcribed, and a wire-grid polarizer, with high productivity. A mold 10 for nanoimprinting having on its mold surface a fine concavo-convex structure comprising a plurality of grooves 14 formed in parallel with one another at a constant pitch, which comprises a mold base 12 made of a resin having on its surface a 10 fine concavo-convex structure to be the base of the fine concavo-convex structure, a metal oxide layer 16 covering the surface having the fine concavo-convex structure of the mold base 12, and a release layer 18 covering the surface of the metal oxide layer 16, is used.10-04-2012
20130126334METHOD FOR PRODUCING GLASS SUBSTRATE FOR MAGNETIC DISKS, AND METHOD FOR PRODUCING MAGNETIC DISK - The present invention provides a method for manufacturing a glass substrate for a magnetic disk that enables grinding processing with fixed abrasive grains without a decrease of the grinding rate and that can manufacture a high quality glass substrate at low cost. The present invention is a method for manufacturing a glass substrate for a magnetic disk, including a grinding step of grinding a main surface of a glass substrate using a lubricant and a surface plate that has a grinding surface provided with fixed abrasive grains containing diamond particles. In the grinding step, for example, by adding Al05-23-2013
20130134034THIN FILM MANUFACTURING METHOD, THIN FILM MANUFACTURING DEVICE, AND LIQUID CRYSTAL DISPLAY DEVICE MANUFACTURING METHOD - Provided is a thin film manufacturing method which is capable of reducing foreign matters to be adhered to a substrate in number while lowering the arcing count. The thin film manufacturing method involves placing a magnet unit (05-30-2013
20130134033METHOD AND APPARATUS FOR FORMING COATING LAYER WITH NANO MULTI-LAYER - Disclosed is a method and apparatus for forming a coating layer using a physical vapor deposition apparatus equipped with a sputtering apparatus and an arc ion plating apparatus, comprising: a first coating step of forming a Mo coating layer on a base material using a the sputtering apparatus and a Mo target and Ar gas; a nitrating step of forming a nitride film forming condition using an arc ion plating apparatus and Ar gas and N05-30-2013
20100276275METHOD OF GENERATING FINE METAL PARTICLES, METHOD OF MANUFACTURING METAL-CONTAINING PASTE, AND METHOD OF FORMING THIN METAL FILM INTERCONNECTION - There is provided a method or the like which safely generates fine metal particles at a low cost without using a chlorine gas. Fine copper particles (11-04-2010
20100314245Ionized Physical Vapor Deposition for Microstructure Controlled Thin Film Deposition - Methods of processing a substrate in a PVD chamber comprising a target, a substrate and a process gas at a pressure sufficient to cause ionization of a substantial portion of species sputtered from the target are described. A capacitively coupled high density plasma is maintained by applying very high frequency power to the target. Sputtered material is ionized in the plasma and accelerated toward the substrate by a high frequency bias power applied to the substrate. The microstructure of the resultant film is controlled by modifying one or more of the pressure and the high frequency bias power.12-16-2010
20110308937LOW K PRECURSORS PROVIDING SUPERIOR INTEGRATION ATTRIBUTES - A deposition for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including one precursor of an organosilane or an organosiloxane, and a porogen distinct from the precursor, wherein the porogen is aromatic in nature; applying energy to the gaseous reagents in the chamber to induce reaction of the gaseous reagents to deposit a film, containing the porogen; and removing substantially all of the organic material by UV radiation to provide the porous film with pores and a dielectric constant less than 2.6.12-22-2011
20130186745AMALGAM METHOD FOR FORMING A SPUTTER TARGET USEFUL IN THE MANUFACTURE OF THIN-FILM SOLAR PHOTOVOLTAIC CELLS - Hardened amalgams formed from copper mixed with liquid gallium or liquid gallium-indium alloys are used to fabricate sputter targets comprised of copper, gallium and indium (CIG) and targets of selenides of copper, gallium and indium (CIGS). Amalgam hardening occurs by formation of intermetallic compounds at or near ambient temperature as a result of reaction between liquid metals and solid metals in powder form.07-25-2013
20120018296CONTINUOUS VACUUM SPUTTERING METHOD - A continuous vacuum sputtering method includes the steps of providing a substrate; providing a continuous vacuum sputtering machine comprising a depositing chamber. The depositing chamber comprising at least one vacuum chamber, each vacuum chamber having a cathodic arc emitting source located therein; the substrate being loaded in the continuous vacuum sputtering machine; depositing a coating on the substrate by cathodic arc deposition using the cathodic arc emitting source.01-26-2012
20130199925HIGH DENSITY TiN RF/DC PVD DEPOSITION WITH STRESS TUNING - Methods for depositing a layer on a substrate are provided herein. In some embodiments, a method of depositing a metal-containing layer on a substrate in a physical vapor deposition (PVD) chamber may include applying RF power at a VHF frequency to a target comprising a metal disposed in the PVD chamber above the substrate to form a plasma from a plasma-forming gas; optionally applying DC power to the target; sputtering metal atoms from the target using the plasma while maintaining a first pressure in the PVD chamber sufficient to ionize a predominant portion of the sputtered metal atoms; and controlling the potential on the substrate to be the same polarity as the ionized metal atoms to deposit a metal-containing layer on the substrate.08-08-2013
20120073959TUBULAR TARGET AND PRODUCTION METHOD - A tubular target is formed of molybdenum or a molybdenum alloy which has an oxygen content of less than 50 μg/g, a density of greater than 99% of the theoretical density and an average grain size of less than 100 μm. The molybdenum or molybdenum alloy tube may be produced by extrusion and it is formed with walls having a wall thickness that increases towards the ends of the tube. The molybdenum tube has a backing tube of titanium or titanium alloy that is attached inside with a material bond connection. Alternatively, the backing tube is formed of austenitic steel or a copper alloy.03-29-2012
20090211898MAGNETIC RECORDING MEDIA HAVING FIVE ELEMENT ALLOY DEPOSITED USING PULSED DIRECT CURRENT SPUTTERING - CoCrPtB is a conventional material used in some of the layers of a thin film magnetic media structure used for recording data in data storage devices such as hard drives. Typically the CoCrPtB layers used for magnetic media have high Cr and low B in bottom magnetic layers and low Cr and high B in top magnetic layers. In accordance with one embodiment of this invention and to improve media electrical performance, fifth elements, such as Ta, Nb and Hf, etc. were added to the CoCrPtB materials, resulting in CoCrPtB-X, to enhance the grain segregation. The five element CoCrPtB-X layers were deposited using a pulsed direct current sputter technique instead of conventional direct current sputtering techniques. The resulting magnetic media structure having CoCrPtB-X alloy layers exhibits an increase in coercivity Hc and improvement in recording performance.08-27-2009

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