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Coating, forming or etching by sputtering

Subclass of:

204 - Chemistry: electrical and wave energy

204000000 - PROCESSES AND PRODUCTS

Patent class list (only not empty are listed)

Deeper subclasses:

Class / Patent application numberDescriptionNumber of patent applications / Date published
204192120 Glow discharge sputter deposition (e.g., cathode sputtering, etc.) 501
204192110 Ion beam sputter deposition 59
204192320 Sputter etching 55
Entries
DocumentTitleDate
20080264774METHOD FOR ELECTROCHEMICALLY DEPOSITING METAL ONTO A MICROELECTRONIC WORKPIECE - Metal seed layers and/or barrier layers are treated to render them more suitable for subsequent electrochemical deposition of metals thereon. The processes employ thermal techniques to reduce metal oxides that have formed on the surface of the seed layers and/or barrier layers.10-30-2008
20080257714METHOD OF MAKING A TMR SENSOR HAVING A TUNNEL BARRIER WITH GRADED OXYGEN CONTENT - A method for manufacturing a tunnel junction magnetoresistive sensor having improved magnetic performance and reliability. The method includes depositing a Mg—O barrier layer in a sputter deposition tool in a chamber having an oxygen concentration that changes. For example, the sputter deposition could be initiated with a first oxygen concentration in the chamber, and then, during the deposition of the barrier layer the oxygen concentration can be reduced.10-23-2008
20100072056SUBSTRATE HOLDERS FOR UNIFORM REACTIVE SPUTTERING - A substrate holder for a substrate including a frame body having an opening for the placement of the substrate. The frame body also includes a hollow portion therein. The substrate holder may be used in a sputtering apparatus for sputtering material onto the substrate. The substrate holder is particularly advantageous in the manufacturing of magnetic recording medium.03-25-2010
20120175243Method of producing a perpendicular magnetic recording medium - To provide a method for manufacturing a perpendicular magnetic recording medium which has improved electromagnetic conversion characteristics, and thus making it possible to achieve the much higher recording density.07-12-2012
20100101938METHOD FOR PRODUCING LOW COST MEDIA - Disclosed is a method for the low cost manufacturing a plurality of rigid sputtered magnetic media disks of one or more sizes from a rigid sheet, in which one or more initial steps of preparing the media are performed while the media is in sheet form. The individual disks are then removed from the sheet, and final processing is performed individually on the disks.04-29-2010
20100101937METHOD OF FABRICATING TRANSPARENT CONDUCTIVE FILM - A method of fabricating transparent conductive film including the following steps is provided. First, a reactive chamber having at least a target and at least a heating device is provided. Subsequentially, a plasma is generated in the reactive chamber, wherein the plasma is located above the target. Next, the plasma is heated by the heating device from a standby temperature to a working temperature. Simultaneously, a hard plastic substrate is passed above the plasma at a specific speed, wherein the particles of the target are bombarded by the plasma so as to form transparent conductive film on the hard plastic substrate.04-29-2010
20120181165IN-SITU GAS INJECTION FOR LINEAR TARGETS - A system and method for in-situ introduction of gas into a vacuum deposition chamber having a target with a length/width form factor ratio greater than 1 includes a plurality of manifolds arranged around the target to deliver a gas to the vacuum chamber. A gas supply is coupled to the manifolds, and a mass flow controller couples each manifold to the gas supply. Each manifold includes a plurality of orifices for introducing gas into the vacuum chamber from the manifold. The method includes arranging a plurality of manifolds around the target, providing a gas supply to the manifolds, controlling a flow rate of the gas with a mass flow controller between each manifold and the gas supply, introducing the gas into the vacuum chamber through orifices in the manifolds, and locating the manifolds and orifices on each manifold to introduce the gas in a controlled arranged manner about the target.07-19-2012
20090095616APPARATUS AND METHOD FOR MEASURING VAPOR FLUX DENSITY - A two-chamber electron impact emission sensor effective for monitoring vapor flux of materials in the presence of interfering species is described. The sensor includes two independent electron excitation regions and one photodetector for monitoring emission from excited species from both chambers. Copper vapor flux from an evaporation source was accurately measured in the presence of interfering H04-16-2009
20130161182SPUTTER APPARATUS, CONTROL DEVICE FOR SPUTTER APPARATUS AND FILM FORMATION METHOD - In an embodiment of the present invention, the following operations are performed while a substrate holder is being rotated at a fixed rotation speed with plasma being generated. Specifically, a first state where a substrate holding surface of the substrate holder is exposed to a target holder is formed to start a first deposition of divisional depositions, and a second state where the surface is shut off from the target holder is formed in T/X seconds after the start of the first divisional deposition. Moreover, the first state is formed to start an n-th deposition of the divisional depositions when a reference point set on the substrate holder arrived at a position rotated by (n−1)×360/X degrees from a position of the reference point located at the start of the targeted deposition, and the second state is formed in T/X seconds after the start of the n-th divisional deposition.06-27-2013
20090294277METHOD AND SYSTEM FOR PRODUCING THIN FILM BIOSENSORS - Method and system for providing a substrate, forming a plurality of electrodes on the substrate, the electrodes including a thin gold layer on the substrate, the gold layer having a thickness of less than approximately 120 nm, and further, each of the formed plurality of electrodes are co-planar relative to each other, and providing a coverlay over at least a portion of the each of the plurality of electrodes are provided.12-03-2009
20090277777COLD-PRESSED SPUTTER TARGETS - A sputter target includes a sputter material made of an alloy or a material mixture composed of at least two components which are in a state of thermodynamic disequilibrium. The components are compacted by an isostatic or uniaxial cold-pressing process.11-12-2009
20090057132Zinc Oxide Thin Film, Transparent Conductive Film and Display Device Using the Same - A zinc oxide thin film having desired crystallinity is fabricated. The present invention provides a zinc oxide thin film which laminated on a substrate, and which is a crystalline thin film of a wurtzite form. The c-axis of the crystalline thin film is oriented in a direction substantially perpendicular to the substrate. A zinc surface of being one polar surface of the crystalline thin film in the c-axis direction is formed in the uppermost layer. In addition, the invention also provides a zinc oxide thin film which is laminated on a substrate, and which is a crystalline thin film of a wurtzite form. The zinc oxide thin film is formed on a metal thin film layer by a thin film fabricating technique.03-05-2009
20110011731PROCESS FOR PRODUCING INDIUM OXIDE-TYPE TRANSPARENT ELECTROCONDUCTIVE FILM - To provide a method for producing a method for producing a low-resistance and high-transmittance indium-oxide-based transparent conductive film readily obtained through crystallization, the method employing an amorphous film which can easily be patterned through etching with a weak acid.01-20-2011
20110011730SYSTEM AND METHOD FOR PLASMA ARC DETECTION, ISOLATION AND PREVENTION - A device for use with an RF generating source, a first electrode, a second electrode and an element. The RF generating source is operable to provide an RF signal to the first electrode and thereby create a potential between the first electrode and the second electrode. The device comprises a connecting portion and a current sink. The connecting portion is operable to electrically connect to one of the first electrode, the second electrode and an element. The current sink is in electrical connection with the connection portion and a path to ground. The current sink comprises a voltage threshold. The current sink is operable to conduct current from the connecting portion to ground when a voltage on the electrically connected one of the first electrode, the second electrode and the element is greater than the voltage threshold.01-20-2011
20120111718METHOD FOR PRODUCING TRANSPARENT CONDUCTIVE FILM - A method for producing a transparent conductive film including a transparent film substrate and a crystalline transparent conductive layer, including: a first depositing a first indium-based complex oxide having a first tetravalent metal element oxide on the transparent film substrate; and a second depositing indium oxide or a second indium-based complex oxide and lower than the tetravalent metal element oxide content of the indium-based complex oxide used in the first depositing by sputtering to form an amorphous transparent conductive layer, and crystallizing the amorphous transparent conductive layer. The method allows a reduction in crystallization time.05-10-2012
20090026066PERPENDICULAR MAGNETIC RECORDING MEDIUM AND METHOD OF MANUFACTURING THE SAME AND PRODUCT THEREOF - The quantity of oxide contained in a magnetic layer is controlled to control the crystal grains and the segregation structure for ensuring low noise characteristic in a granular magnetic layer of a perpendicular magnetic recording medium. The granular magnetic layer consists of ferromagnetic crystal grains and a nonmagnetic grain boundary region mainly of an oxide surrounding the ferromagnetic crystal grains. The perpendicular magnetic recording medium has a nonmagnetic underlayer composed of a metal or alloy having hexagonal closest-packed crystal structure. The ferromagnetic crystal grain is composed of an alloy containing at least cobalt and platinum. The volume proportion of the nonmagnetic grain boundary region mainly of the oxide falls within a range of 15% to 40% of the volume of the total magnetic layer.01-29-2009
20090014317APPARATUS FOR FILM DEPOSITION ON A CONTINUOUS FLEXIBLE WEB - An apparatus for film deposition on a continuous flexible web includes: a deposition chamber; a web-supporting drum disposed rotatably in the deposition chamber and having an outer surface for supporting the flexible web thereon; a web-conveying unit including a web-supplying roller and a web-take-up roller for conveying the continuous flexible web from the web-supplying roller onto the outer surface of the web-supporting drum and then to the web-take-up roller; and a plurality of sputtering guns disposed around the outer surface of the web-supporting drum for depositing a film on the first surface of the flexible web on the outer surface of the web-supporting drum.01-15-2009
20090014316Sputter-enhanced evaporative deposition apparatus and method - A deposition apparatus includes a deposition source that produces a deposition flow of a deposited material and has an evaporation source with a material to be deposited therein, and a sputtering source that produces sputtering ions directed at the material to be deposited in the evaporation source. A deposition target is in facing relationship to the deposition source. The sputtering source is operated simultaneously with the evaporation source.01-15-2009
20090008240METHOD AND SYSTEM FOR CONTROLLING A VAPOR DEPOSITION PROCESS - A method and system for conditioning a vapor deposition target is described. In one illustrative embodiment, a vapor deposition system is operated in which a vapor deposition target is used, the occurrence of electrical arcs in the vapor deposition system is detected, and the vapor deposition target is conditioned by adjusting an output current of a power supply that powers the vapor deposition system and adjusting an interval during which energy is delivered to each arc to deliver substantially the same energy to each arc. In some embodiments, the energy delivered to each arc is approximately equal to the maximum energy that the vapor deposition target can withstand without being damaged. The described method and system significantly reduces the time required to remove impurities from a target and does not require the venting of the vacuum chamber or the removal of the target from the chamber.01-08-2009
20120234670MACHINE AND METHOD FOR METALLIZATION OF THREE-DIMENSIONAL OBJECTS OF SMALL SIZES - A machine for metallization of three-dimensional objects of small sizes comprising a feeding device (09-20-2012
20130161181METHOD FOR MANUFACTURING A MAGNETIC RECORDING DISK WITH IMPROVED YIELD - A method for manufacturing a magnetic media for magnetic data recording that greatly reduces the time required to manufacture the magnetic media. After constructing the magnetic disk with the desired magnetic media layer, a protective overcoat is deposited on the disk. The disk is then exposed to ozone in order to speed the rate of oxidation of the protective overcoat and thereby reduce the time needed to treat the overcoat. After exposing the overcoat to an ozone a lubrication layer can be applied. This process reduces the time necessary to cure the overcoat from a time of about 24 hours to a time range of 10 seconds to 30 minutes.06-27-2013
20130161183SYSTEM ARCHITECTURE FOR COMBINED STATIC AND PASS-BY PROCESSING - Disclosed is a substrate processing system which enables combined static and pass-by processing. Also, a system architecture is provided, which reduces footprint size. The system is constructed such that the substrates are processed therein vertically, and each chamber has a processing source attached to one sidewall thereof, wherein the other sidewall backs to a complementary processing chamber. The chamber system can be milled from a single block of metal, e.g., aluminum, wherein the block is milled from both sides, such that a wall remains and separates each two complementary processing chambers.06-27-2013
20090205948GENERATION OF MULTILAYER STRUCTURES IN A SINGLE SPUTTERING MODULE OF A MULTI-STATION MAGNETIC RECORDING MEDIA FABRICATION TOOL - Methods of fabricating perpendicular magnetic recording media are disclosed. The multilayer structures of the perpendicular magnetic recording media are fabricated by varying the sputtering conditions (i.e., pressure, sputtering gas, etc) in a single sputtering module so that multiple sputtering modules are not needed to form the multilayer structures. These fabrication methods allow sputtering tools with a limited number of chambers, which were designed for the manufacture of longitudinal media, to be used to efficiently produce perpendicular media architectures which heretofore required a large number of sputtering modules. It is further shown that media structures involving a geometric weak-link architecture are suited for these fabrication techniques.08-20-2009
20120061235MIXED SPUTTERING TARGET OF CADMIUM SULFIDE AND CADMIUM TELLURIDE AND METHODS OF THEIR USE - Mixed targets are generally disclosed for sputtering an intermixed layer of cadmium sulfide and cadmium telluride. The mixed target can include cadmium sulfide, and cadmium telluride. Methods of forming the mixed target are also provided. For example, a powdered blend can be formed from powdered cadmium sulfide and powdered cadmium telluride, and pressed into a mixed target Methods are also generally disclosed for manufacturing a cadmium telluride based thin film photovoltaic device having an intermixed layer. For example, a mixed target of cadmium sulfide and cadmium telluride can be sputtered directly on a cadmium sulfide layer to form an intermixed layer, and a cadmium telluride layer can be formed on the intermixed layer.03-15-2012
20080314735Reactive Multilayer Joining To Control Thermal Stress - A method for bonding components with a reactive multilayer foil, wherein during bonding, the components are held at a temperature or temperature gradient chosen to reduce thermal stress in the resulting bonded product.12-25-2008
20080210543MEMS Vascular Sensor - A micromachined sensor for measuring vascular parameters, such as fluid shear stress, includes a substrate having a front-side surface, and a backside surface opposite the front-side surface. The sensor includes a diaphragm overlying a cavity etched within the substrate, and a heat sensing element disposed on the front-side surface of the substrate and on top of the cavity and the diaphragm. The heat sensing element is electrically couplable to electrode leads formed on the backside surface of the substrate. The sensor includes an electronic system connected to the backside surface and configured to measure a change in heat convection from the sensing element to surrounding fluid when the sensing element is heated by applying an electric current thereto, and further configured to derive from the change in heat convection vascular parameters such as the shear stress of fluid flowing past the sensing element.09-04-2008
20120228122SPUTTERING APPARATUS AND ELECTRONIC DEVICE MANUFACTURING METHOD - A sputtering apparatus includes a target holder arranged in a vacuum chamber and holds a target to be deposited on a substrate, a substrate holder arranged in the vacuum chamber and supports the substrate, a shutter interposed between the target holder and the substrate holder, and that can set a closed state in which the shutter shields the substrate holder and target holder from each other, and an open state in which the shutter releases the space between the substrate holder and the target holder, a shutter support member which supports the shutter, and a joint mechanism interposed between the shutter support member and the shutter, and that can set a state in which the joint mechanism disconnects the shutter and shutter support member to be able to rotate the shutter, and a state in which the joint mechanism couples and fixes the shutter and shutter support member.09-13-2012
20100032287Method of making window unit including diamond-like carbon (DLC) coating - A method of making a coated article (e.g., window unit), and corresponding coated article are provided. A layer of or including diamond-like carbon (DLC) is formed on a glass substrate. Then, a protective layer is formed on the substrate over the DLC inclusive layer. During heat treatment (HT), the protective layer prevents the DLC inclusive layer from significantly burning off. Thereafter, the resulting coated glass substrate may be used as desired, it having been HT and including the protective DLC inclusive layer.02-11-2010
20120097524RF IMPEDANCE MATCHING NETWORK WITH SECONDARY FREQUENCY AND SUB-HARMONIC VARIANT - Embodiments of the disclosure may provide a matching network for physical vapor deposition. The matching network may include a first RF generator coupled to a deposition chamber target through a first impedance matching network having a first tuning circuit. The first RF generator may be configured to introduce a first AC signal to the deposition chamber target. The matching network may also include a second RF generator coupled to a deposition chamber pedestal through a second impedance matching network. The second RF generator may be configured to introduce a second AC signal to the deposition chamber pedestal. The first tuning circuit may be configured to modify an effect of the second AC signal on plasma formed between the deposition chamber target and the deposition chamber pedestal.04-26-2012
20090139853SPUTTERING APPARATUS AND SPUTTERING METHOD - The present invention is to provide a sputtering apparatus and a sputtering method, specifically, a magnetron sputtering apparatus having a magnetron electrode capable of generating plasma in a wide region near the surface of a target, and a sputtering method using the apparatus. Thereby, a magnetic field shape enabling to generate plasma in a wide region near the surface of a target is realized, the use efficiency of the target material is increased, and dusts and abnormal electric discharges may be prevented. Magnetic circuit 06-04-2009
20090188784BIO-SENSORS INCLUDING NANOCHANNEL INTEGRATED 3-DIMENSIONAL METALLIC NANOWIRE GAP ELECTRODES, MANUFACTURING METHOD THEREOF, AND BIO-DISK SYSTEM COMPRISING THE BIO-SENSORS - There are provided a bio-sensor including nanochannel-integrated 3-dimensional metallic nanowire gap electrodes, a manufacturing method thereof, and a bio-disk system comprising the bio-sensor. The bio-sensor includes an upper substrate block having a plurality of metallic nanowires formed on a lower surface thereof and including an injection port through which a biomaterial-containing sample is injected; a lower substrate block having a plurality of metallic nanowires formed on an upper surface thereof; and a supporting unit supporting the upper and lower substrate blocks so that the upper and lower substrate blocks can be disposed spaced apart at a predetermined distance to form a nanochannel, wherein the metallic nanowires formed on the upper and lower substrate blocks are combined to form 3-dimensional metallic nanowire gap electrodes.07-30-2009
20120024693REACTIVE SPUTTERING CHAMBER WITH GAS DISTRIBUTION TUBES - A sputtering apparatus for processing large area substrates is provided. By introducing gas across the entire target surface, a uniform composition film may be formed on the substrate. When the gas is introduced merely at the perimeter, the gas distribution is not uniform. By providing a gas introduction tube across the processing area, the reactive gas will uniformly distribute to the whole target. Also, providing the gas tube with multiple inner tubes provides a quick, effective gas dispersion capability.02-02-2012
20120024692MIXED SPUTTERING TARGETS AND THEIR USE IN CADMIUM SULFIDE LAYERS OF CADMIUM TELLURIDE VASED THIN FILM PHOTOVOLTAIC DEVICES - Methods are generally provided of sputtering a cadmium sulfide layer on a substrate. The cadmium sulfide layer can be sputtered on a substrate from a mixed target including cadmium, sulfur, and oxygen. The cadmium sulfide layer can be used in methods of forming cadmium telluride thin film photovoltaic devices.02-02-2012
20080264775SPUTTERING FILM FORMING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND SPUTTERING SYSTEM - A sputtering film forming method. which positions a target 10-30-2008
20090236216METHOD OF MANUFACTURING THIN FILM MAGNETIC HEAD - A method of manufacturing a thin film magnetic head is capable of forming a gap depth at high precision. The method includes: a step of forming, on a lower front end magnetic pole of a recording head unit that constructs the thin film magnetic head, a resist layer that has a shape where, in a cross section in a recording track direction and a head height direction, a length in the head height direction increases from a lower part of the resist layer toward an upper part; and a step of lifting off that forms a gap depth setting layer by sputtering on an insulating layer that is adjacent to the lower front end magnetic pole and on the resist layer and then carries out a lift off process that removes the resist layer and leaves the gap depth setting layer in a predetermined form.09-24-2009
20090166181SPUTTER DEPOSITION OF METAL ALLOY TARGETS CONTAINING A HIGH VAPOR PRESSURE COMPONENT - Compositions and methods for enabling sputter deposition from targets containing high vapor pressure compounds are describe. An element or compound with a high vapor pressure may be combined with an element or compound with a lower vapor pressure to form a low vapor pressure compound. An alloy sputtering target may then be formed by combining the low vapor pressure compound with a metal that serves as the main material of the sputter target. In some instances, the low vapor pressure compound may comprise MgB07-02-2009
20080314736FILLED-GAP MAGNETIC RECORDING HEAD AND METHOD OF MAKING - A filled-gap magnetic recording head is provided comprising a flat or cylindrical contour head having a row of magnetic transducers in a gap region disposed between a rowbar substrate and a closure. The gap region is intentionally recessed to have a predetermined recess profile below a tape support surface. An electrical insulation layer is deposited on the tape support surface and on the recess profile of the gap region. The insulation layer prevents electrical shorting between the magnetic transducers and other conductive elements in the gap due to accumulations of conductive debris from the magnetic recording tape. A method of making the filled-gap magnetic recording head by intentionally recessing the gap region, cleaning the recessed profile and depositing an insulator layer is provided.12-25-2008
20090166182METHOD FOR MANUFACTURING TUNNELING MAGNETORESISTIVE FILM - According to an aspect of an embodiment, a method for manufacturing a tunneling magnetoresistive film includes: providing a substrate and a first ferromagnetic layer on the substrate; and depositing a barrier material on the first ferromagnetic layer by sputtering to a target material including an element having an atomic weight in the range of 14 to 27 under an atmosphere including Ne to form a barrier layer consisting essentially of an ionic crystal with a rock-salt structure. The method further includes providing a second ferromagnetic layer on the barrier layer.07-02-2009
20080296148Method for fabricating concentration-gradient high-frequency ferromagnetic films - The present invention discloses a method for fabricating concentration-gradient high-frequency ferromagnetic film, wherein the primary material target is arranged exactly below the sputter-coated substrate to achieve the on-substrate concentration uniformity of the components coming from the primary material target; at least one doping target is arranged at a position deviating from the center of the substrate to create a doping concentration gradient on the substrate along a direction, and a stress gradient is thus created on the substrate along the direction of concentration variation. Thus, the as-deposited ferromagnetic material fabricated at ambient temperature can possess the uniaxial anisotropy that a high-frequency ferromagnetic material needs.12-04-2008
20080289953High rate sputtering apparatus and method - The invention provides a sputtering method that involves exposing a surface of a target support to a flow of a target material, such that the exposing results in condensing the target material on the surface of the target support in a first position and sputtering the condensed target material from the surface of the target support in a second position to a substrate, wherein the surface of the target support in the second position is not exposed to the flow of the evaporated target material during the sputtering. A sputtering target unit also provided. The sputtering method and the sputtering target unit allow performing a high rate sputtering of poor thermal conductors.11-27-2008
20120193216SUBSTRATE COOLING DEVICE, SPUTTERING APPARATUS AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE - A substrate cooling device includes: a substrate holding stage including a recess defining a space between a substrate mounting unit and a substrate mounted on the substrate mounting unit; a holding member that exerts a pressing force against the substrate holding stage so as to fix the substrate to the substrate holding stage; a refrigerator connected to the substrate holding stage; a coolant gas inlet path including a coolant gas inlet opening that is provided at the substrate holding stage and opens to a recessed face of the recess, the coolant gas inlet path connecting a space in the recess via the coolant gas inlet opening to a coolant gas supply; and a coolant gas outlet path including a coolant gas outlet opening that is provided at the substrate holding stage independently of the coolant gas inlet opening and opens to the recessed face of the recess.08-02-2012
20080271988Thin Film Forming Sputtering Target, Dielectric Thin Film, Optical Disc and Production Method Therefor - Diffusion of water or oxygen present in the dielectric protection film is restrained by eliminating free oxygen in an oxide thin film while maintaining the characteristics of a dielectric protection film. As the dielectric material for forming a dielectric protection film for an optical disc or the like, an oxide mixture thin film of a niobium oxide and one of a silicon oxide and a titanium oxide is used. In a preferable example, a target made of a niobium oxide as the main component with 1 to 30% by weight of a silicon oxide added is used for formation of an oxide thin film by sputtering. Moreover, the oxide thin film is formed preferably in a nitrogen atmosphere. A nitrogen containing oxide thin film is produced by carrying out sputtering using a target with the oxygen lacked and a minute amount of nitrogen added. Thereby, a thin film having little reducing function and a high barrier property while having the characteristics comparable to a complete oxide can be produced.11-06-2008
20110266138ELECTROCHROMIC DEVICES - Conventional electrochromic devices frequently suffer from poor reliability and poor performance. Improvements are made using entirely solid and inorganic materials. Electrochromic devices are fabricated by forming an ion conducting electronically-insulating interfacial region that serves as an IC layer. In some methods, the interfacial region is formed after formation of an electrochromic and a counter electrode layer. The interfacial region contains an ion conducting electronically-insulating material along with components of the electrochromic and/or the counter electrode layer. Materials and microstructure of the electrochromic devices provide improvements in performance and reliability over conventional devices.11-03-2011
20110266137ELECTROCHROMIC DEVICES - Conventional electrochromic devices frequently suffer from poor reliability and poor performance. Improvements are made using entirely solid and inorganic materials. Electrochromic devices are fabricated by forming an ion conducting electronically-insulating interfacial region that serves as an IC layer. In some methods, the interfacial region is formed after formation of an electrochromic and a counter electrode layer. The interfacial region contains an ion conducting electronically-insulating material along with components of the electrochromic and/or the counter electrode layer. Materials and microstructure of the electrochromic devices provide improvements in performance and reliability over conventional devices.11-03-2011
20080302653Method And Device For Producing An Anti-Reflection Or Passivation Layer For Solar Cells - The present invention relates to a method for producing an anti-reflection and/or passivation coating for solar cells. The method may include the steps of providing a silicon wafer in a deposition chamber, pre-heating said silicon wafer to a temperature above 400° C. and deposition of a hydrogen containing anti-reflection and/or passivation coating by a sputter process. A coating apparatus is also provided for producing solar cells, especially anti-reflection and/or passivation coatings on Si wafers, comprising a first vacuum chamber, a second vacuum chamber and conveying means for transporting a substrate through said first and second vacuum chambers. The first vacuum chamber comprising at least one infrared radiation heater with a heater filament that has a temperature between 1800° C. and 3000° C. The second vacuum chamber comprising sputter means for vaporization of a target as well as a gas inlet for introducing a reactive gas including hydrogen.12-11-2008
20100140078METHOD AND APPARATUS FOR FORMING CONTACT LAYERS FOR CONTINUOUS WORKPIECES - The present invention provides a roll to roll system and a method to sputter deposit various conductive films on a back surface and a front surface of a continuous substrate to form protected base structures for Group IBIIIAVIA thin film solar cells. In one embodiment of the invention, a back protection film is sputter deposited onto the entire back side of the substrate in a first deposition station without transferring heat from the substrate. Next, a first front film is sputter deposited in a second deposition station to partially cover the front side of the substrate while heat is transferred from substrate by a cooling surface of a cooling mechanism in the second deposition station. The second film does not cover the edges of the substrate to avoid contaminating the cooling surface with the depositing material. Other embodiments are directed to specifics regarding the depositing of these films, adding other films, and a system for depositing the films.06-10-2010
20110220485METHOD FOR MANUFACTURING DEVICE AND MANUFACTURING APPARATUS - In one embodiment, a method is disclosed for manufacturing a device including forming a film on an object of processing using sputtering. The method can form a first film of a first sputtered particle on the object of processing at a first position. The first sputtered particle travels in a direction intersecting a major surface of a sputtering target. The object of processing and the sputtering target do not overlap as viewed in plan at the first position. In addition, the method can form a second film of a second sputtered particle on the first film at a second position. The second sputtered particle travels in a direction substantially orthogonal to the major surface of the sputtering target. The object of processing and the sputtering target at least partially overlap as viewed in plan at the second position. The second sputtered particle is screened in the case where the object of processing not having the first film formed on the object of processing is at the second position.09-15-2011
20090050468CONTROLLED SURFACE OXIDATION OF ALUMINUM INTERCONNECT - An aluminum interconnect metallization for an integrated circuit is controllably oxidized in a pure oxygen ambient with the optional addition of argon. It is advantageously performed as the wafer is cooled from above 300° C. occurring during aluminum sputtering to less than 100° C. allowing the aluminized wafer to be loaded into a plastic cassette. Oxidation may controllably occur in a pass-through chamber between a high-vacuum and a low-vacuum transfer chamber. The oxygen partial pressure is advantageously in the range of 0.01 to 1 Torr, preferably 0.1 to 0.5 Torr. The addition of argon to a total pressure of greater than 1 Torr promotes wafer cooling when the wafer is placed on a water-cooled pedestal. To prevent oxygen backflow into the sputter chambers, the cool down chamber is not vacuum pumped during cooling and first argon and then oxygen are pulsed into the chamber.02-26-2009
20100147677DRUM DESIGN FOR WEB PROCESSING - A roll to roll system for depositing a material on a workpiece is provided. In one embodiment, the system includes a drum, which rotates about an axis that is transverse to a process direction, and a number of PVD deposition units. The drum further includes a peripheral surface that includes a groove having a recessed workpiece contact surface that is parallel to the axis and disposed between a first side wall and a second side wall. A portion of the recessed workpiece contact surface supports a section of the workpiece and the first and second side walls maintain the section of the workpiece on the portion of the recessed workpiece contact surface as the workpiece is moved along the process direction. The PVD deposition units are disposed across from some of the portion of the peripheral surface and continuously deposit the material across a width of some of the section of the workpiece.06-17-2010
20120103793VACUUM FILM-FORMING APPARATUS AND POSITION DETECTION METHOD FOR SHUTTER PLATE OF VACUUM FILM-FORMING APPARATUS - At the time of detecting a position of a shutter plate, a laser light, for instance, is radiated from a detector (an optical sensor). The radiated laser light reaches the shutter plate through a window of a chamber. Then, the laser light is reflected by the surface of the shutter plate and re-enters the detector. The detector detects the time required from the emission of the laser light to the entry of the reflected light.05-03-2012
20120103792HIGH SPEED LOW POWER MAGNETIC DEVICES BASED ON CURRENT INDUCED SPIN-MOMENTUM TRANSFER - A high speed and low power method to control and switch the magnetization direction and/or helicity of a magnetic region in a magnetic device for memory cells using spin polarized electrical current. The mapetic device comprises a reference magnetic layer with a fixed magnetic helicity and/or magnetization direction and a free magnetic layer with a changeable magnetic helicity and/or magnetization direction. The fixed magnetic layer and the free magnetic layer are preferably separated by a non-magnetic layer. The fixed and free magnetic layers may have magnetization directions at a substantially nonzero angle relative to the layer normal. A current can be applied to the device to induce a torque that alters the magnetic state of the device so that it can act as a magnetic memory for writing information. The resistance, which depends on the magnetic state of the device, is measured to read out the information stored in the device.05-03-2012
20100187093SPUTTERING TARGET, METHOD OF MANUFACTURING THIN FILM, AND DISPLAY DEVICE - In forming an LaB07-29-2010
20100258430SPUTTERING APPARATUS AND FILM FORMING METHOD - A sputtering apparatus forming a film on a surface of a substrate, including: a table on which the substrate is placed; a plurality of targets disposed so that center axes thereof incline with respect to a normal line of the substrate placed on the table; and a plurality of magnetic field applying devices disposed between the targets and the substrate so as to surround the substrate, wherein the magnetic field applying devices generates a magnetic field, which has a horizontal magnetic field component parallel to the surface of the substrate, above the peripheral edge of the substrate.10-14-2010
20090078563Plasma Processing Apparatus And Method Capable of Adjusting Temperature Within Sample Table - A plasma processing method includes mounting a workpiece to be processed on an upper surface of a sample table disposed at a lower portion of an interior of a processing chamber disposed within a vacuum vessel and processing the workpiece by use of plasma formed within the processing chamber while applying thereto a first high frequency power for adjustment of a surface potential of the workpiece which is disposed on the sample table. The method further includes starting, prior to application of the first high frequency power, to adjust a temperature of a heat exchange medium flowing in a passage disposed inside of the sample table so as to have a predetermined value based on information of this high frequency power.03-26-2009
20090078562METHOD OF SYSTEM MAINTENANCE PLANNING BASED ON CONTINUAL ROBOT PARAMETER MONITORING - At least one substrate location sensor is provided on a piece of equipment containing two adjoined chambers between which substrates may be transferred one at a time. Deviation of substrate position from a predetermined optimal position is measured as a substrate is transferred between the two adjoined chambers. Measured data on the deviation of substrate position is entered into a statistical control program hosted in a computing means. The measured data indicates the level of performance of the robot and/or the condition of alignment of components in one of the two chambers. As the statistical control generates flags based on the measured data, maintenance activities may be performed. Thus, maintenance activities may be performed on a “as-needed” basis, determined by the measurement data on performance of the equipment.03-26-2009
20090314631Magnetron With Electromagnets And Permanent Magnets - A magnet assembly for a magnetron sputtering device having circular, linear or other types of planar targets including two permanent magnets and an electromagnet, e.g., electromagnetic coil between the permanent magnets associated with a sputtering target of a target assembly. An electrical control circuit is arranged to selectively adjust at least the current level and the direction of current to the electromagnet to alter the magnetic fields of the magnet assembly thereby encompassing the entire portions of the sputtering target, including the extreme inner and outer portions of the sputtering target to optimize the target uniformity and the sputtered film uniformity on a substrate. Methods for operating the magnet assembly of the magnetron sputtering devices, for optimizing the target utilization and sputtered film uniformity on a substrate, and for operating the magnetron sputtering process in a reactive gas environment to form an insulating or dielectric thin film are also provided.12-24-2009
20100236918FILM FORMING APPARATUS AND FILM FORMING METHOD - A film formation apparatus and film formation method that improve film thickness uniformity. A rotation mechanism holds a target having a sputtered surface in a state inclined relative to a surface of a substrate. The rotation mechanism rotatably supports the target about an axis extending along a normal of the sputtered surface. The target supported by the rotation mechanism is sputtered to form a thin film on the surface of the substrate. When forming the thin film, the rotation mechanism maintains the rotational angle of the target.09-23-2010
20110056824METHOD OF PREPARING POSITIVE ACTIVE MATERIAL FOR LITHIUM BATTERY - Disclosed is a method of preparing a positive active material for a lithium battery. The method comprises: depositing a positive active material on an electrode on a substrate (1); and putting metal chips on a metal oxides target and performing a sputtering process, thereby depositing mixed metal-oxides on the positive active material (2). In another aspect, the method comprises: preparing an electrode active material; preparing a precursor solution including the electrode active material; and printing the precursor solution on the substrate, and evaporating a solvent at a temperature of 80-120° C.03-10-2011
20100000854Combinatorial Deposition Method and Apparatus Thereof - A combinatorial deposition method is characterized in that, in a method of performing thin-film coating onto a substrate disposed in a vacuum, two or more substrates are moved between a deposition position and a cooling position, sequentially only substrates to be coated is moved to the deposition position while substrates at the cooling position are cooled by a cooling mechanism, and substrates are respectively deposited under different deposition conditions in only one vacuum evacuation process. Various deposition conditions with regard to sputtering and the like are accurately controlled, so that coating films can be efficiently produced under different deposition conditions.01-07-2010
20080283387METHODS AND APPARATUS FOR TRANSFERRING CONDUCTIVE PIECES DURING SEMICONDUCTOR DEVICE FABRICATION - In a first aspect, a programmable transfer device is provided for transferring conductive pieces to electrode pads of a target substrate. The programmable transfer device includes (1) a transfer substrate; and (2) a plurality of individually addressable electrodes formed on the transfer substrate. Each electrode is adapted to selectively attract and hold a conductive piece during transfer of the conductive piece to an electrode pad of a target substrate. Numerous other aspects are provided.11-20-2008
20110108412Method to Improve Corrosion Performance of Exchange Coupled Granular Perpendicular Media - The invention relates to a granular perpendicular magnetic recording medium comprising a top magnetic layer on a granular layer wherein the magnetic layer comprises a continuous Co alloy film that results in the recording medium having less than 10% CoOx on the surface of the protective overcoat when the recording medium is exposed to 80% relative humidity at 80° C. for 4 days.05-12-2011
20110174607COLORED DEVICE CASING AND SURFACE-TREATING METHOD FOR FABRICATING SAME - A colored device casing includes a base, a color layer and a bonding layer. The base has at least one smooth region. The bonding layer is positioned between the base and the color layer and bonds the base and color layer together. The color layer includes at least one metal layer. A portion of the color layer corresponding to and located over the smooth region has a value for L* in a range from about 70.44 to about 72.44, a value for a* in a range from about −7.84 to about −6.84 and a value for b* in a range from about −8.57 to about −7.57 according to the Commission Internationale del'Eclairage LAB system. A surface-treating method for fabricating the colored casing is also provided.07-21-2011
20110079507MANUFACTURING METHOD OF SEMICONDUCTOR ELEMENT - A manufacturing method of a semiconductor element formed by multi-layering on a substrate so as to include an n-type semiconductor and a p-type semiconductor. The method includes a process of sputtering, with a gas including a group V element, at least two targets (a first target 04-07-2011
20110100797PROCEDURE FOR OBTAINING FILMS OF INTERMEDIATE BAND SEMICONDUCTOR MATERIALS - This invention describe a process for obtaining thin films of intermediate band semiconductor materials consisting of obtaining a target of compressed particles of the said material for its use in sputtering equipment. The target is obtained by means of the thermal process of a mixture of semiconductor material components, following a specific profile of temperatures and times, in order to obtain a material in a polycrystalline form of the same composition as the intermediate band semiconductor material. The polycrystalline material is disintegrated again by means of mechanical processes in the form of a powder and is then compacted, through the application of a suitable pressure in order to form a target.05-05-2011
20110048924PLASMA IGNITION PERFORMANCE FOR LOW PRESSURE PHYSICAL VAPOR DEPOSITION (PVD) PROCESSES - A plasma ignition system includes a first voltage supply that selectively supplies a plasma ignition voltage and a plasma maintenance voltage across an adapter ring and a cathode target of a physical vapor deposition (PVD) system. A second voltage supply selectively supplies a second voltage across the adapter ring and an anode ring of the PVD system. A plasma ignition control module ignites plasma using the plasma ignition voltage and the auxiliary plasma ignition voltage and, after the plasma ignites, supplies the plasma maintenance voltage and ceases supplying the plasma ignition voltage and the auxiliary plasma ignition voltage.03-03-2011
20110031106METHOD FOR FABRICATING LEAD FRAME OF LIGHT EMITTING DIODE - A method for fabricating lead frames of light emitting diodes (LEDs) including following steps is provided. First, a conductive frame tape is provided. The conductive frame tape includes a plurality of conductive frames arranged along an extending direction of the conductive frame tape. Each of the conductive frames has a first connection portion adapted to carry an LED chip. Next, a plurality of first sputter layers are selectively sputtered onto the conductive frame tape through at least one target, and the first sputter layers are formed on the first connection portions, respectively.02-10-2011
20100243427FABRICATION OF LOW DEFECTIVITY ELECTROCHROMIC DEVICES - Prior electrochromic devices frequently suffer from high levels of defectivity. The defects may be manifest as pin holes or spots where the electrochromic transition is impaired. This is unacceptable for many applications such as electrochromic architectural glass. Improved electrochromic devices with low defectivity can be fabricated by depositing certain layered components of the electrochromic device in a single integrated deposition system. While these layers are being deposited and/or treated on a substrate, for example a glass window, the substrate never leaves a controlled ambient environment, for example a low pressure controlled atmosphere having very low levels of particles. These layers may be deposited using physical vapor deposition.09-30-2010
20080230372Deposition system with electrically isolated pallet and anode assemblies - A system for substrate deposition. The system includes a wafer pallet and an anode. The wafer pallet has a bottom and a top. The top of the wafer pallet is configured to hold a substrate wafer. The anode has a substantially fixed position relative to the wafer pallet and is configured to move with the wafer pallet through the deposition chamber. The anode is electrically isolated from the substrate wafer.09-25-2008
20110209982METHODS FOR DEPOSITING A LAYER ON A SUBSTRATE USING SURFACE ENERGY MODULATION - Methods for depositing layers on substrates are provided herein. In some embodiments, a method of forming a layer on a substrate having at least one feature disposed therein includes forming a conformal layer on an upper surface of the substrate and within the at least one feature by sputtering a target material using a first plasma that reduces the surface energy of the target material such that the sputtered target material wets the upper surface of the substrate and the at least one feature to form the conformal layer; and filling at least a portion of the at least one feature by sputtering the target material using a second plasma different from the first plasma to increase the surface energy of the sputtered target material and the conformal layer such that at least portions of the conformal layer are pulled into the at least one feature by capillary action.09-01-2011
20120199469PVD SPUTTERING TARGET WITH A PROTECTED BACKING PLATE - Embodiments of the invention provide sputtering targets utilized in physical vapor deposition (PVD) and methods to form such sputtering targets. In one embodiment, a sputtering target contains a target layer disposed on a backing plate, and a protective coating layer—usually containing a nickel material—covering and protecting a region of the backing plate that would otherwise be exposed to plasma during the PVD processes. In many examples, the target layer contains a nickel-platinum alloy, the backing plate contains a copper alloy (e.g., copper-zinc), and the protective coating layer contains metallic nickel. The protective coating layer eliminates the formation of highly conductive, copper contaminants typically derived by plasma erosion of the copper alloy contained within the exposed surfaces of the backing plate. Therefore, the substrates and the interior surfaces of the PVD chamber remain free of such copper contaminants during the PVD processes.08-09-2012
20080245656Sputtering Target and Process For Producing Si Oxide Film Therewith - A Si sputtering target that in the measurement of crystal face orientation of sputtering surface according to X-ray diffractometry, exhibits a ratio of peak intensity of (111) face (I10-09-2008
20080202917Method for Manufacturing a Magnetoresistive Multilayer Film - This application discloses a method and apparatus for manufacturing a magnetoresistive multilayer film having a structure where an antiferromagnetic layer, a pinned-magnetization layer, a nonmagnetic spacer layer and a free-magnetization layer are laminated on a substrate in this order. A film for the antiferromagnetic layer is deposited by sputtering as oxygen gas is added to a gas for the sputtering. A film for an extra layer interposed between the substrate and the antiferromagnetic layer is deposited by sputtering as oxygen gas is added to a gas for the sputtering. The film for the antiferromagnetic layer is deposited by sputtering as a gas mixture of argon and another gas of larger atomic number than argon is used.08-28-2008
20080202916Controlling magnetic leakage flux in sputtering targets containing magnetic and non-magnetic elements - Various exemplary embodiments of the present invention relate to a method for controlling magnetic leakage flux in a sputtering target containing magnetic and non-magnetic elements. The method relates to selecting a particle size of at least one non-magnetic phase in a microstructure, where the particle size of the non-magnetic phase is greater than or equal to one micron. The non-magnetic phase is combined with at least one magnetic phase in the microstructure, where the magnetic phase is greater than or equal to 10 atomic percent and is greater than one micron in size. The selected particle size of the non-magnetic phase decreases the diffusion between the magnetic and non-magnetic phases in the microstructure, and may increase the pass through flux (PTF) of the sputtering target. The magnetic phase and non-magnetic phases may be combined in the microstructure by hot isostatic pressing, sintering, spark plasma sintering, or vacuum hot pressing.08-28-2008
20110162959VACUUM PUMPING SYSTEM, SUBSTRATE PROCESSING APPARATUS, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND OPERATING METHOD OF VACUUM PUMPING SYSTEM - A plurality of vacuum pumps each having a refrigerator are connected to a common compressor. At least one of the plurality of vacuum pumps performs repeating an operation including a process in which a gas in a low-pressure state is adiabatically compressed when the interior of a cylinder shifts from the low-pressure state to a high-pressure state as a result of a valve operation of the refrigerator, and a process in which a displacer passes through the adiabatically compressed gas. At least another one of the plurality of vacuum pumps performs repeating an operation including a process in which a gas in the high-pressure state is adiabatically expanded when the interior of the cylinder shifts from the high-pressure state to the low-pressure state as a result of the valve operation of the refrigerator, and a process in which the displacer passes through the adiabatically expanded gas.07-07-2011
20110011732METHOD OF REPAIRING A MOLDING DIE FOR MOLDING GLASS - The present invention provides a method of repairing a molding die for molding glass, the molding die for molding glass comprising a base member, a first buffer layer on the base member, which is made of titanium or any material which is easily attacked by a first attack solution, wherein the first attack solution includes hydrofluoric acid, a protective film on the first buffer layer; the method comprising the steps of using the first attack solution to remove the first buffer layer that causes no damage on the base member, and then operating a sputtering process to build a new first buffer layer and a new protective layer on the base member.01-20-2011
20110168544Manufacturing Method of Optical Filter - [Object]To provide a manufacturing method of an optical filter having favorable film quality by removing a foreign substance adhered onto a surface of a substrate by cleaning before a thin film is formed.07-14-2011
20110048925Coated article with sputter-deposited transparent conductive coating capable of surviving harsh environments, and method of making the same - Certain example embodiments relate to sputter-deposited transparent conductive coatings (TCCs) that are capable of surviving the harsh environments of ovens so that they can be included, for example, in oven door applications. In certain example embodiments, zirconium oxide (e.g., ZrO03-03-2011
20100187094THIN FILM FORMING APPARATUS, FILM THICKNESS MEASURING METHOD AND FILM THICKNESS SENSOR - A technology which is capable of an accurate measurement of the film thickness even if an exfoliation occurs is provided. A difference frequency Δf07-29-2010
20100078308PROCESS FOR DEPOSITING A COATING ON A BLISK - A process for depositing coatings, and particularly erosion-resistant coatings suitable for protecting surfaces of a gas turbine engine blisk having a disk and integral blades with flowpath surfaces that are susceptible to erosion. The processing involves placing the blisk adjacent a coating material source in an apparatus configured to evaporate the source and generate coating material vapors. The blisk is oriented relative to the coating material source so that the axis of rotation of the blisk is within about forty-five degrees of a linear path that the coating material vapors flow from the coating material source to the blisk, and more erosion-susceptible flowpath surfaces of the blades face the coating material source. The blisk is then rotated about its axis of rotation while the coating material source is evaporated to preferentially deposit the coating material vapors and form a coating on the erosion-susceptible flowpath surfaces of the blades and disk.04-01-2010
20100078309SPUTTERING METHOD AND SPUTTERING APPARATUS - A sputtering method is for forming, in a vacuum chamber, an initial layer on a film formation target object and then further forming a second layer on the initial layer therein, and the method includes: in the vacuum chamber, arranging surfaces of a pair of targets to face each other while distanced apart from each other at a preset distance and to be inclined toward the film formation target object placed at a lateral position between the targets, and then sputtering the targets by generating a magnetic field space on the facing surfaces of the pair of targets, and thus forming the initial layer on the film formation target object by using particles sputtered by the sputtering; and further forming the second layer on the film formation target object at a higher film forming rate than a film forming rate of the initial layer.04-01-2010
20090045044Novel manufacturing design and processing methods and apparatus for sputtering targets - Sputtering targets having a reduced burn-in time are described herein, where the target comprises an atmospheric plasma-treated surface material having at least about 10% reduced residual surface damage as compared to the residual surface damage of the surface material prior to atmospheric plasma treatment. Sputtering targets having reduced burn-in times are also described herein that include: a) an atmospheric plasma-finished surface material having an average grain size, and b) a core material having an average grain size, wherein the atmospheric plasma-finished surface material has an average surface roughness (Ra) equal to or less than about the average grain size of at least one of the surface material or the core material. An apparatus for producing sputtering targets having a reduced burn-in time, a reduced surface contamination or a combination of both has been developed that comprises an enclosure having a volume of air, an atmospheric plasma source positioned at least in part in the enclosure, a sputtering target positioned substantially inside the enclosure and at least one analytical instrument for measuring the constituent components in the volume of air, wherein at least part of the analytical instrument in located in the enclosure. Methods of producing sputtering targets having reduced burn-in times include: providing a surface material having at least some residual surface damage, providing an atmospheric plasmatron, forming an atmospheric plasma utilizing the atmospheric plasmatron, scanning at least part of the surface material with the atmospheric plasma in order to reduce the surface damage by at least about 10%.02-19-2009
20110147198VACUUM PUMPING SYSTEM, OPERATING METHOD OF VACUUM PUMPING SYSTEM, REFRIGERATOR, VACUUM PUMP, OPERATING METHOD OF REFRIGERATOR, OPERATION CONTROL METHOD OF TWO-STAGE TYPE REFRIGERATOR, OPERATION CONTROL METHOD OF CRYOPUMP, TWO-STAGE TYPE REFRIGERATOR, CRYOPUMP, SUBSTRATE PROCESSING APPARATUS, AND MANUFACTURING METHOD OF ELECTRONIC DEVICE - A plurality of vacuum pumps each having a refrigerator are connected to a common compressor. At least one of the plurality of vacuum pumps performs an operation for repeating an operation including a process in which a gas in a low-pressure state is adiabatically compressed when the interior of a cylinder shifts from the low-pressure state to a high-pressure state as a result of a valve operation of the refrigerator, and a process in which a displacer passes through the adiabatically compressed gas. At least another one of the plurality of vacuum pumps performs an operation for repeating an operation including a process in which a gas in the high-pressure state is adiabatically expanded when the interior of the cylinder shifts from the high-pressure state to the low-pressure state as a result of the valve operation of the refrigerator, and a process in which the displacer passes through the adiabatically expanded gas.06-23-2011
20120037492MAGNET TRANSPORTATION SYSTEM, SPUTTERING APPARATUS INCLUDING THE SAME AND SPUTTERING METHOD - A sputtering apparatus for uniformly eroding a sputtering target is disclosed. The sputtering apparatus includes a substrate, a sputtering target having a first surface facing the substrate, a magnet configured to apply a magnetic field to the sputtering target, and facing a second surface of the sputtering target, a guide rail connected to the magnet configured to support and guide the magnet member, wherein a first portion of the guide rail, corresponding to a central portion of the sputtering target, includes a linear portion in a first direction parallel to the second surface of the sputtering target, and wherein a second portion of the guide rail, corresponding to an edge portion of the sputtering target, includes an inclined portion away from the sputtering target in a second direction perpendicular to the first direction, a screw line formed in the first direction in parallel to the guide rail, and a connector connected to the magnet by an elastic, and configured to move the magnet in the first direction along the screw line.02-16-2012
20120312681SPUTTERING TARGET, METHOD FOR MANUFACTURING SPUTTERING TARGET, AND METHOD FOR FORMING THIN FILM - There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.12-13-2012
20120043198FILM FORMATION APPARATUS AND FILM FORMATION METHOD - There have been cases where transistors using oxide semiconductors are inferior in reliability to transistors using amorphous silicon. There have also been cases where transistors using oxide semiconductors show great variation in electrical characteristics within one substrate, from substrate to substrate, or from lot to lot. Therefore, an object is to manufacture a semiconductor device using an oxide semiconductor which has high reliability and less variation in electrical characteristics. Provided is a film formation apparatus including a load lock chamber, a transfer chamber connected to the load lock chamber through a gate valve, a substrate heating chamber connected to the transfer chamber through a gate valve, and a film formation chamber having a leakage rate less than or equal to 1×1002-23-2012
20120055783PROCESS FOR PRODUCING A TARGET BY THERMAL SPRAYING - Process for producing a target by thermal spraying, especially by plasma spraying, said target comprising at least one compound chosen from refractory metals, resistive oxides and volatile oxides, characterized in that at least one fraction of said compound in the form of a powder composition of said compound is sprayed by thermal spraying, onto at least one surface portion of the target, in a controlled atmosphere and in that powerful cryogenic cooling jets directed onto the target during its construction are used.03-08-2012
20110155560SINTERED COMPLEX OXIDE, METHOD FOR PRODUCING SINTERED COMPLEX OXIDE, SPUTTERING TARGET AND METHOD FOR PRODUCING THIN FILM - A sintered complex oxide comprising metal oxide particles (a) having a hexagonal lamellar structure and containing zinc oxide and indium, and metal oxide particles (b) having a spinel structure and containing a metal element M (where M is aluminum and/or gallium), wherein the mean value of the long diameter of the metal oxide particles (a) is no greater than 10 μm, and at least 20% of the metal oxide particles (a) have an aspect ratio (long diameter/short diameter) of 2 or greater, based on the number of particles.06-30-2011
20120006675FILM FORMING METHOD, FILM FORMING APPARATUS AND CONTROL UNIT FOR THE FILM FORMING APPARATUS - The invention reduces generation of particles. An embodiment of the preset invention includes a target holder (01-12-2012
20120012454FABRICATION METHOD OF CRYSTALLIZED TRANSPARENT CONDUCTING OXIDES ON SELF-ASSEMBLED ORGANIC LAYER MODIFIED SUBSTRATE - A fabrication method of crystallized transparent conducting oxides (TCOs) on a self-assembled organic layer modified substrate is provided and said method includes steps of: providing a substrate having a surface; processing the surface of the substrate by an organic molecular solution, so as to form a self-assembled organic layer on the surface of the substrate; and forming a transparent conducting oxide (TCO) layer on the self-assembled organic layer at a lower temperature below 300° C. The self-assembled organic layer can be used to modify the surface of the substrate to form a highly crystallized TCO layer thereon.01-19-2012
20120061234Deposition Chamber Cleaning Method Including Stressed Cleaning Layer - A method for cleaning a deposition chamber includes forming a deposited layer over an interior surface of the deposition chamber, wherein the deposited layer has a deposited layer stress and a deposited layer modulus; forming a cleaning layer over the deposited layer, wherein a material comprising the cleaning layer is selected such that the cleaning layer adheres to the deposited layer, and has a cleaning layer stress and a cleaning layer modulus, wherein the cleaning layer stress is higher than the deposited layer stress, and wherein the cleaning layer modulus is higher than the deposited layer modulus; and removing the deposited layer and the cleaning layer from the interior of the deposition chamber.03-15-2012
20100096253PVD CU SEED OVERHANG RE-SPUTTERING WITH ENHANCED CU IONIZATION - A method and apparatus for depositing metal on a patterned substrate are provided. A metal layer is formed in a physical vapor deposition process having a first energy. A second physical vapor deposition process is performed on the metal layer, using a second energy, wherein deposition interacts with brittle and plastic surface modification processes to form a substantially conformal metal layer on the substrate.04-22-2010
20090134010SPUTTERING APPARATUS AND SPUTTERING METHOD - A sputtering apparatus according to the present invention includes a substrate holding means for holding substrates and gas introducing routes having a plurality of gas jetting ports arranged at a plurality of places surrounding the substrates, and characterized in that at least one of the gas introducing routes is provided with a gas introduction connecting port, and the number of gas jetting ports provided in at least one of the gas introducing routes with the gas introduction connecting port is smaller than the number of gas jetting ports provided in the other gas introducing routes without the gas introduction connecting ports, or an aperture of each of the gas jetting ports provided in at least one of the gas introducing routes with the gas introduction connecting port is smaller than an aperture of each of the gas jetting ports provided in the other gas introducing routes without the gas introduction connecting ports.05-28-2009
20100288625FILM DEPOSITION APPARATUS AND FILM DEPOSITION METHOD - A film deposition apparatus that deposits a compound thin film on a front surface of a substrate held in a sputter deposition chamber by reactive sputtering, in which the sputter deposition chamber includes a first film quality adjustment gas introduction device that introduces a film quality adjustment gas to a rear surface of the substrate, the film quality adjustment gas adjusting a film quality of a compound thin film deposited on the front surface of the substrate.11-18-2010
20120211351METHOD AND APPARATUS FOR FORMING SILICON DOTS AND METHOD AND APPARATUS FOR FORMING A SUBSTRATE WITH SILICON DOTS AND INSULATING FILM - Silicon dots are formed at a relatively low temperature, while suppressing occurrence of defects and clustering of silicon dots and damages caused by plasma, with high controllability of particle diameter and high reproducibility between substrates. Moreover, silicon dots and insulating film are formed at a relatively low temperature, with high controllability of the particle diameter of the silicon dots, high controllability of the thickness of the insulating film and high reproducibility between substrates. A method and an apparatus 08-23-2012
20120247948SPUTTERING TARGET OF MULTI-COMPONENT SINGLE BODY AND METHOD FOR PREPARATION THEREOF, AND METHOD FOR PRODUCING MULTI-COMPONENT ALLOY-BASED NANOSTRUCTURED THIN FILMS USING SAME - The present invention relates to a sputtering target of a multi-component single body, a preparation method thereof, and a method for fabricating a multi-component alloy-based nanostructured thin film using the same. The sputtering target according to the present invention comprises an amorphous or partially crystallized glass-forming alloy system composed of a nitride forming metal element, which is capable of reacting with nitrogen to form a nitride, and a non-nitride forming element which has no or low solid solubility in the nitride forming metal element and does not react with nitrogen or has low reactivity with nitrogen, wherein the nitrogen forming metal element comprises at least one element selected from Ti, Zr, Hf, V, Nb, Ta, Cr, Y, Mo, W, Al, and Si, and the non-nitride forming element comprises at least one element selected from Mg, Ca, Sc, Ni, Cu, Ag, In, Sn, La, Au, and Pb.10-04-2012
20120073957USE OF A PROCESS FOR DEPOSITION BY SPUTTERING OF A CHALCOGENIDE LAYER - A deposition process includes sputtering of a layer of a material having a chalcogenide compound, the chalcogenide being composed of at least one chalcogen on and at least one electropositive element, in order to increase or to decrease the atomic proportion (%) of the chalcogen ion with respect to the atomic proportion (%) of the electropositive element.03-29-2012
20120118724STAINLESS STEEL SEPARATOR FOR FUEL CELL HAVING M/MNX AND MOYNZ LAYER AND METHOD FOR MANUFACTURING THE SAME - Disclosed herein is a method of manufacturing a stainless steel separator for a fuel cell. The stainless steel separator includes a stainless steel sheet, a first coating layer comprising metal/metal nitride films (M/MN05-17-2012
20120186974PERPENDICULAR MAGNETIC RECORDING MEDIA WITH OXIDE-CONTAINING EXCHANGE COUPLING LAYER - A method according to one embodiment includes forming a high Ku first oxide magnetic layer above a substrate by sputtering; forming a low Ku second oxide magnetic layer above the first oxide magnetic layer by sputtering; forming an exchange coupling layer of CoCrPt-oxide above the second oxide magnetic layer; and forming a magnetic cap layer above the exchange coupling layer. Additional systems and methods are also presented.07-26-2012
20120255855METHOD OF CONTROLLING LITHIUM UNIFORMITY - A method and apparatus for providing uniform coatings of lithium on a substrate are provided. In one aspect of the present invention is a method of selectively controlling the uniformity and/or rate of deposition of a metal or lithium in a sputter process by introducing a quantity of reactive gas over a specified area in the sputter chamber. This method is applicable to planar and rotating targets.10-11-2012
20090020414METHOD OF ELIMINATING ELECTROSTATIC CHARGES GENERATED FROM FRICTION BETWEEN A CARRIER AND A SUBSTRATE - A method of eliminating electrostatic charges generated from friction between a carrier and a substrate is provided. A substrate having a front surface and a back surface is provided. A transparent conductive layer is formed on the back surface by sputtering or evaporation process, wherein the electrostatic charges accumulated on the carrier are eliminated through the transparent conductive layer when the anti-static substrate is in contact with the carrier.01-22-2009
20120261253ROTARY MAGNETRON MAGNET BAR AND APPARATUS CONTAINING THE SAME FOR HIGH TARGET UTILIZATION - An apparatus for coating a substrate is provided that includes a racetrack-shaped plasma source having two straight portions and at least one terminal turnaround portion connecting said straight portions. A tubular target formed of a target material that forms a component of the coating has an end. The target is in proximity to the plasma source for sputtering of the target material. The target is secured to a tubular backing cathode, with both being rotatable about a central axis. A set of magnets are arranged inside the cathode to move an erosion zone aligned with the terminal turnaround toward the end of the target as the target is utilized to deposit the coating on the substrate. Target utilization of up to 87 weight percent the initial target weight is achieved.10-18-2012
20120267237Production of Nanoparticles - We have found that a pulsed DC supply is surprisingly beneficial in the use of sputter deposition for creating nanoparticles. The deposition rate is increased, and the particle size can be tuned so that it clusters around a specific value. A method of sputter deposition is therefore disclosed, comprising the steps of providing a magnetron, a sputter target, and an AC power supply or a pulsed DC power supply for the magnetron, sputtering particles from the sputter target into a chamber containing an inert gas, allowing the particles to coalesce into nanoparticles, and controlling the frequency of said AC power supply or said pulsed DC power supply to take one of a plurality of frequency values, each frequency value corresponding to a respective size distribution of said nanoparticles. The power supply frequency is preferably between 75 kHz and 150 kHz as this appears to yield optimal results. A corresponding apparatus for generating nanoparticles is also disclosed.10-25-2012
20120267236TANTALUM SPUTTERING TARGET AND METHOD FOR MANUFACTURING THE SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT - In one embodiment, a method for manufacturing a tantalum sputtering target includes a first knead forging step, a first heating step, a second knead forging step, a cold rolling step, and a second heating step. In the first knead forging step, a tantalum material is subjected to two sets or more of knead forging, each of the sets being cold forging in directions parallel to and perpendicular to a thickness direction. In the second knead forging step, one set or more of knead forging is performed after the first heating step, each of the steps being cold forging in the directions parallel to and perpendicular to the thickness direction.10-25-2012
20120318663METHODS FOR FORMING METAL FLUORIDE FILM AND FOR MANUFACTURING OPTICAL DEVICE - In a method for forming a metal fluoride film, a metal fluoride film is formed on a substrate by sputtering using a metal target and a mixed gas containing O12-20-2012
20120318664Pinhole-Free Dielectric Thin Film Fabrication - A method of depositing a dielectric thin film may include: depositing a thin layer of dielectric; stopping deposition of the dielectric layer, and modifying the gas in the chamber if desired; inducing and maintaining a plasma in the vicinity of the substrate to provide ion bombardment of the deposited layer of dielectric; and repeating the depositing, stopping and inducing and maintaining steps until a desired thickness of dielectric is deposited. A variation on this method may include, in place of the repeating step: depositing a thick layer of lower quality dielectric; depositing a thin layer of high quality dielectric; stopping deposition of the dielectric layer, and modifying the gas in the chamber if desired; and inducing and maintaining a plasma in the vicinity of the substrate to provide ion bombardment of the deposited layer of dielectric. The thick layer of dielectric may be deposited more rapidly than the thin layers.12-20-2012
20120298501SEPARATED TARGET APPARATUS FOR SPUTTERING AND SPUTTERING METHOD USING THE SAME - A separated target apparatus includes a base plate; and a plurality of source units including a plurality of separated targets that are adhered on one surface of the base plate and that form a regular array, and a plurality of magnets that are adhered on the other surface of the base plate and that make a pair with the plurality of separated targets. The plurality of source units are arrayed in parallel at an angle between a first direction that is a direction of the regular array and a second direction that is perpendicular to the first direction. Sputtering is performed by using the separated target apparatus having the aforementioned structure.11-29-2012
20120325650SPUTTERING TARGET, METHOD FOR MANUFACTURING SPUTTERING TARGET, AND METHOD FOR FORMING THIN FILM - There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.12-27-2012
20120325649METHOD OF SUPPORTING A WORKPIECE DURING PHYSICAL VAPOUR DEPOSITION - Methods and related apparatus support a work piece during a physical vapour deposition. An aluminium support having a support surface coated with a heat absorbent coating is provided. The support is cooled to around 100° C. and a PVD process is performed such that, with cooling, the work piece temperature is between 350° C. and 450° C. The coating is inert and/or ultra-high voltage compatible.12-27-2012
20120090986Method of fabricating composite field emission source - A method of fabricating a composite field emission source is provided. A first stage of film-forming process is performed by using RF magnetron sputtering, so as to form a nano structure film on a substrate, in which the nano structure film is a petal-like structure composed of a plurality of nano graphite walls. Afterward, a second stage of film-forming process is performed for increasing carbon accumulation amount on the nano structure film and thereby growing a plurality of nano coral-like structures on the petal-like structure. Therefore, the composite field emission source with high strength and nano coral-like structures can be obtained, whereby improving the effect and life of electric field emission.04-19-2012
20120138451IN-MOULD MOLDING TOUCH MODULE AND METHOD FOR MANUFACTURING THE SAME - An in-mould molding touch module includes a plastic film, a touch circuit and a molding rind. The plastic film includes an inner surface and an outer surface for handling and touching. At least one region of the inner surface and a corresponding region of the outer surface define a touch area. The touch circuit is arranged on the inner surface in the touch area. The molding rind is integrated on the inner surface by an in-mould injecting mode to contain the touch circuit for forming a one-piece body. In addition, the invention also provides a method for manufacturing an in-mould molding touch module.06-07-2012
20130015054METHOD OF CONTROLLING LITHIUM UNIFORMITY - A method and apparatus for providing uniform coatings of lithium on a substrate are provided. In one aspect of the present invention is a method of selectively controlling the uniformity and/or rate of deposition of a metal or lithium in a sputter process by introducing a quantity of reactive gas over a specified area in the sputter chamber. This method is applicable to planar and rotating targets.01-17-2013
20080230371METHOD AND APPARATUS FOR EXTENDING CHAMBER COMPONENT LIFE IN A SUBSTRATE PROCESSING SYSTEM - A chamber component for a substrate processing system is described. The chamber component comprises a primary member, and a deposit absorbing member coupled to the primary member, wherein the deposit absorbing member comprises a porous material configured to absorb material that is deposited on a surface thereof.09-25-2008
20110253523SPUTTERING APPARATUS AND METHOD - A sputtering apparatus includes a preheating chamber, a deposition chamber, a connection assembly connecting the preheating chamber to the deposition chamber, a first supporting assembly received in the preheating chamber, a second supporting assembly received in the deposition chamber, a number of posts capable of mounting on each of the first and second supporting assemblies, and a transferring robot arranged in the preheating chamber. The connection assembly includes a connection member defining a passage in communication with the preheating chamber and the deposition chamber and a partition plate moveably coupled to the connection member. The partition plate is configured for selectively closing or opening the passage. Each post fixes workpieces thereon. The transferring robot is configured for demounting the post from the two supporting assemblies, transferring the demounted post between the preheating chamber and the deposition chamber, and mounting the transferred post on the two supporting assemblies.10-20-2011
20130092526Method of activation of noble metal for measurement of glucose and associated biosensor electrode - An electrochemical glucose biosensor comprising two electrodes with at least one of electrodes having both a metallic layer and a non-metallic layer in direct contact with the metallic layer. The metallic layer is comprised of a noble metal element. A glucose reactive strip connects the first electrode and the second electrode.04-18-2013
20110220486METHOD OF PRODUCING ALPHA CRYSTAL STRUCTURE-BASED ALUMINA FILMS - In forming alumina films on substrates by sputtering of an aluminum metal target in an oxidizing gas-containing atmosphere, film formation is carried out intermittently in a plurality of substeps while restricting a thickness of the film formed in each substep to at most 5 nm. A turntable is disposed to face a direction of sputtering of the aluminum metal target and the substrates are fixed to the turntable.09-15-2011
20130146442PROFILED SPUTTER TARGET - In one aspect of the invention, a sputter source is provided. The sputter source includes a target source affixed to a bottom plate of the sputter source. A plurality of magnets spaced apart from each other is included. The plurality of magnets is disposed above a surface of the bottom plate, wherein a surface of the target source is profiled such that the target source has a minimum thickness aligned with an axis of each of the plurality of magnets and a maximum thickness aligned with an axis of a gap defined between each of the plurality of magnets. A method of processing a substrate is also included.06-13-2013
20110272275System for Sputtering and Method Thereof - A sputtering method includes receiving etch time information for a first substrate detected in a dry etching process, calculating a deposition time for a second substrate from the etch time information for the first substrate, and executing sputtering for the second substrate based the calculated deposition time. The thickness of the thin film deposited on the substrate in the sputter device may be uniformly maintained by using etch end point information detected in an end point detection (EPD) device. A sputtering system comprises a sputter device for executing a sputtering process for depositing a thin film on a substrate by a sputtering method, an EPD device for generating EPD information including etch time information for the substrate for a calculation of a deposition time during which the thin film is deposited, and a controller for calculating a deposition time by using the EPD information, and for controlling the sputter device based on the calculated deposition time.11-10-2011
20110308936METHOD FOR MANUFACTURING LANTHANUM BORIDE FILM - A method for manufacturing a lanthanum boride film includes, in the state in which a lanthanum boride target having an oxygen content in a range of 0.4 to 1.2 percent by mass and a substrate are arranged to face each other, a step of forming a lanthanum boride film on the substrate by a sputtering technique, and when the mean free path of a sputtering gas molecule in film formation is represented by λ (mm) and the distance between the substrate and the target is represented by L (mm), L/λ is set to 20 or more, and the value obtained by dividing a discharge electrical power by a target area is set in a range of 1 to 5 W/cm12-22-2011
20110308935METHOD OF MANUFACTURING POWER STORAGE DEVICE - An object is to provide a method of manufacturing a lithium-ion secondary battery suitable for mass production. A lithium-ion secondary battery is manufactured in such a manner that a positive electrode layer is formed on a base including a plane by chemical vapor deposition which is specifically metal-organic chemical vapor deposition, an electrolyte layer is formed on the positive electrode layer, and a negative electrode layer is formed on the electrolyte layer. The positive electrode layer is formed with a MOCVD apparatus. The MOCVD apparatus is an apparatus with which a liquid or a solid of an organic metal raw material is vaporized to produce a gas and the gas is reacted to undergo pyrolysis so that a film is formed. By forming all the layers using sputtering, evaporation, or chemical vapor deposition, a solid lithium-ion secondary battery can also be realized.12-22-2011
20130186742METHOD FOR MANUFACTURING MAGNETIC RECORDING MEDIUM - A method for manufacturing a magnetic recording medium includes reducing and eliminating impurity gas present in a chamber. A magnetic recording layer is formed and an active material layer is also formed immediately below or immediately above the magnetic recording layer in respective chambers. The active material layer is formed in the same chamber or with a gate opened between the magnetic recording layer chamber and the active material layer chamber.07-25-2013
20120285818PLASMA DOPING METHOD WITH GATE SHUTTER - In a plasma doping device according to the invention, a vacuum chamber is evacuated with a turbo-molecular pump as an exhaust device via a exhaust port while a predetermined gas is being introduced from a gas supply device in order to maintain the inside of the vacuum chamber to a predetermined pressure with a pressure regulating valve. A high-frequency power of 13.56 MHz is supplied by a high-frequency power source to a coil provided in the vicinity of a dielectric window opposed to a sample electrode to generate inductive-coupling plasma in the vacuum chamber. A high-frequency power source for supplying a high-frequency power to the sample electrode is provided. Uniformity of processing is enhanced by driving a gate shutter and covering a through gate.11-15-2012
20090218213SPRAYED Si- OR Si:Al-TARGET WITH LOW IRON CONTENT - A sputter target for sputtering a silicon-containing film is provided. The target includes a silicon-containing sputter material layer, and a carrier for carrying the sputter material layer, wherein the sputter material layer contains less than 200 ppm iron.09-03-2009
20120298500SEPARATED TARGET APPARATUS FOR SPUTTERING AND SPUTTERING METHOD USING THE SAME - A separated target apparatus and a sputtering method using the separated target apparatus. The separated target apparatus includes a plurality of separated targets that are adhered to a base plate and that form a regular array, wherein gaps between the plurality of separated targets are disposed within an angle between a first direction that is a direction of the regular array, and a second direction perpendicular to the first direction. When sputtering is performed by using the separated target apparatus having the aforementioned structure, it is possible to obtain an uniform deposition quality on a substrate by using the separated targets that are easily manufactured and handled, and thus it is possible to make brightness of a display apparatus be uniform on an entire screen.11-29-2012
20120073958TUBULAR TARGET AND PRODUCTION METHOD - A tubular target formed of molybdenum or a molybdenum alloy has an oxygen content of less than 50 μg/g, a density of greater than 99% of the theoretical density, and an average grain size of less than 100 μm. The molybdenum or molybdenum alloy tube may be produced by extrusion. In one embodiment, the molybdenum tube has a backing tube of titanium or titanium alloy. In an embodiment, the molybdenum tube has a varying wall thickness with an increase towards its ends.03-29-2012

Patent applications in class Coating, forming or etching by sputtering

Patent applications in all subclasses Coating, forming or etching by sputtering