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Electrostatic field or electrical discharge

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204 - Chemistry: electrical and wave energy


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Class / Patent application numberDescriptionNumber of patent applications / Date published
204165000 Organic 21
204176000 Ozone 11
204173000 Carbon 9
204177000 Nitrogen compounds 3
20100089742PULSED PLASMA DEVICE AND METHOD FOR GENERATING PULSED PLASMA - A device and a method for generating a truly pulsed plasma flow are disclosed. The device includes a cathode assembly comprising a cathode and a cathode holder, an anode, and two or more intermediate electrodes, the anode and the intermediate electrodes forming a plasma channel expanding toward the anode. The intermediate electrode closest to the cathode may form a plasma chamber around the cathode tip. An extension nozzle forming an extension channel having a tubular insulator along at least a portion of its interior surface is affixed to the anode end of the device.04-15-2010
20100320074METHOD FOR PREPARING GALLIUM NITRIDE NANOPARTICLES - A method for preparing gallium nitride nanoparticles includes providing a pair of electrodes; the pair of electrodes being opposedly disposed to one another. One electrode of the pair of electrodes is filled with gallium nitride powder. The pair of electrodes is dipped in a liquid. An arc discharge is produced between the pair of electrodes. The arc discharge produces a plasma between the pair of electrodes.12-23-2010
20120318662METHOD FOR FORMING BOND BETWEEN DIFFERENT ELEMENTS - The present invention provides a doping technique that forms a stable amorphous silicon film and a stable polycrystalline silicon film at a low temperature and simultaneously that imparts conductivity in an atmospheric pressure environment. A method for producing a compound containing a bond between different elements belonging to Group 4 to Group 15 of the periodic table, the method included: applying, at a low frequency and atmospheric pressure, high voltage to an inside of an electric discharge tube obtained by attaching high-voltage electrodes to a metal tube or an insulator tube or between flat plate electrodes while passing an introduction gas, so as to convert molecules present in the electric discharge tube or between the flat plate electrodes into a plasma; and applying the plasma to substances to be irradiated, the substances to be irradiated being two or more elementary substances or compounds.12-20-2012
204175000 Hydrogen peroxide 1
20110272274METHOD FOR PRODUCING HYDROGEN PEROXIDE - The present invention relates to a method for preparing an aqueous solution of hydrogen peroxide from oxygen, hydrogen and optionally water. The invention more particularly relates to a method for preparing an aqueous solution of hydrogen peroxide in which at least a portion of the reactor is cooled down to a temperature lower than 15° C.11-10-2011
20110180387PLASMA TREATMENT APPARATUS AND METHOD - A plasma treated gas permeable material is produced by applying an alternating voltage between spaced electrodes, at least one of which is covered with a dielectric barrier and at least one of which comprises a plurality of discrete electrode segments, to generate plasma microdischarges between the spaced electrodes. A gas permeable material is passed between or adjacent to the spaced electrodes. A gas is moved between the electrode segments into and through the space between the electrodes and through the gas permeable material. The gas flows over plasma generation surfaces of the respective electrode segments and is moved at a rate whereby the gas flow between the spaced electrodes is turbulent and so randomises the plasma microdischarges and disperses plasma products that would otherwise give rise to burning instabilities in the gas permeable material, whereby the randomized plasma microdischarges provide a generally uniform plasma treatment of the gas permeable material. Also disclosed is an apparatus for laying out the process.07-28-2011
20090120781Air Purification Device - Disclosed is an air purification device including a discharge part for discharging electricity in air. Low-profiling of the air purification device is accomplished while maintaining the discharge capability of the discharge part. In an ionization part (05-14-2009
20100101935Methods and Apparatus for Generating Strongly-Ionized Plasmas with Ionizational Instabilities - A strongly-ionized plasma generator includes a chamber for confining a feed gas. An anode is positioned inside the chamber. A cathode assembly is positioned adjacent to the anode inside the chamber. An output of a pulsed power supply is electrically connected between the anode and the cathode assembly. The pulsed power supply comprising solid state switches that are controlled by micropulses generated by drivers. At least one of a pulse width and a duty cycle of the micropulses is varied so that the power supply generates a multi-step voltage waveform at the output having a low-power stage including a peak voltage and a rise time that is sufficient to generate a plasma from the feed gas and a transient stage including a peak voltage and a rise time that is sufficient to generate a more strongly-ionized plasma.04-29-2010
20100155222APPLICATION OF DENSE PLASMAS GENERATED AT ATMOSPHERIC PRESSURE FOR TREATING GAS EFFLUENTS - The invention concerns a system for treating gases such as PFC or HFC with plasma, comprising: (06-24-2010
20090159424DUAL ZONE GAS INJECTION NOZZLE - The present invention generally provides apparatus and method for processing a substrate. Particularly, the present invention provides apparatus and methods to obtain a desired distribution of a process gas. One embodiment of the present invention provides an apparatus for processing a substrate comprising an injection nozzle having a first fluid path including a first inlet configured to receive a fluid input, and a plurality of first injection ports connected with the first inlet, wherein the plurality of first injection ports are configured to direct a fluid from the first inlet towards a first region of a process volume, and a second fluid path including a second inlet configured to receive a fluid input, and a plurality of second injection ports connected with the second inlet, wherein the second injection ports are configured to direct a fluid from the second inlet towards a second region of the process volume.06-25-2009
20090159425METHOD OF CORRECTING BASELINE SKEW BY A NOVEL MOTORIZED SOURCE COIL ASSEMBLY - The present invention generally provides apparatus and method for adjusting plasma density distribution in an inductively coupled plasma chamber. One embodiment of the present invention provides an apparatus configured for processing a substrate. The apparatus comprises a chamber body defining a process volume configured to process the substrate therein, and a coil assembly coupled to the chamber body outside the process volume, wherein the coil assembly comprises a coil mounting plate, a first coil antenna mounted on the coil mounting plate, and a coil adjusting mechanism configured to adjust the alignment of the first coil antenna relative to the process volume.06-25-2009
20100108491METHODS FOR REMOVING A METAL OXIDE FROM A SUBSTRATE - A method for generating plasma for removing metal oxide from a substrate is provided. The method includes providing a powered electrode assembly, which includes a powered electrode, a dielectric layer, and a wire mesh disposed between the powered electrode and the dielectric layer. The method also includes providing a grounded electrode assembly disposed opposite the powered electrode assembly to form a cavity wherein the plasma is generated. The wire mesh is shielded from the plasma by the dielectric layer when the plasma is present in the cavity, which has an outlet at one end for providing the plasma to remove the metal oxide. The method further includes introducing at least one inert gas and at least one process gas into the cavity. The method yet also includes applying an rf field to the cavity using the powered electrode to generate the plasma from the inert and the process gas.05-06-2010
20120181164SILICON PURIFICATION METHOD AND SILICON PURIFICATION DEVICE - The silicon purification method uses a silicon purification device including at least a crucible for loading a silicon metal and a plasma torch, and purifies the silicon metal by injecting a plasma gas from the plasma torch toward a melt surface of the silicon metal loaded in the crucible in a state where an angle formed by the melt surface and the plasma gas is set in the range of 20° to 80°.07-19-2012
20100006419DEVICE FOR GENERATION OF PULSED CORONA DISCHARGE - The invention is a method and system for the generation of high voltage, pulsed, periodic corona discharges capable of being used in the presence of conductive liquid droplets. The method and system can be used, for example, in different devices for cleaning of gaseous or liquid media using pulsed corona discharge. Specially designed electrodes and an inductor increase the efficiency of the system, permit the plasma chemical oxidation of detrimental impurities, and increase the range of stable discharge operations in the presence of droplets of water or other conductive liquids in the discharge chamber.01-14-2010
20090301863METHOD AND APPARATUS FOR DUST SUPRESSION - The subject matter relates to devices and methods for dust suppression utilizing an electrostatic dust suppression apparatus which develops an ion cloud containing charged particles for attracting or charging floating dust by bonding to the dust molecules. The particle are introduced through an electrode of the electrostatic dust suppression apparatus which adds an electrostatic charge to the particles as they are dispersed onto an area of fugitive dust. The disbursement of the electrostatic charged particles is accomplished by a pressurized air stream. The electrostatically charged particles attract the fugitive dust and cause the formation of large agglomerates that gravitationally fall to the earth or are electrostatically attracted to the earth.12-10-2009
20090057131DIRECT INJECTION OF PLASMA ACTIVATED SPECIES (PAS) AND RADIATION INTO LIQUID SOLUTIONS ASSISTED WITH BY A GAS BUFFERED HOUSING - A method of stimulating chemical reactions within a liquid uses a gas plasma ejected from a gas-buffered plasma injection device to create a plasma-liquid interface. The injection device has an electrically-conductive housing with an inlet, an outlet and an electrode embedded in the housing interior so as to create flow paths through the electrode and between the electrode and housing, in the method, the outlet is submersed in a liquid and a gas plasma is supplied at the inlet. A direct-current voltage applied across the electrode and housing accelerates the plasma and ejects it through the outlet into the liquid.03-05-2009
20090236215GLIDING ARC ELECTRICAL DISCHARGE REACTORS WITH IMPROVED NOZZLE CONFIGURATION - A plasma gliding arc discharge reactor is described. The reactor may include a housing having a plurality of divergent electrodes, a power supply connected to the electrodes, which delivers pulsed power to the reactor, and a nozzle that directs a mixture of a carrier gas and a liquid to a region between the divergent electrodes, thereby generating plasma in the region. The nozzle can include a first inlet for receiving the carrier gas, a second inlet for receiving the liquid and a mixing chamber that is configured to mix the carrier gas and the liquid prior to being directed to the region.09-24-2009
20090236214TUNABLE GROUND PLANES IN PLASMA CHAMBERS - An apparatus and method are provided for controlling the intensity and distribution of a plasma discharge in a plasma chamber. In one embodiment, a shaped electrode is embedded in a substrate support to provide an electric field with radial and axial components inside the chamber. In another embodiment, the face plate electrode of the showerhead assembly is divided into zones by isolators, enabling different voltages to be applied to the different zones. Additionally, one or more electrodes may be embedded in the chamber side walls.09-24-2009
20110062014PLASMA REACTOR - A plasma reactor (03-17-2011
20110278155ELECTROCHEMICAL CONTROL OF CHEMICAL CATALYSIS USING SINGLE MOLECULE MOTORS AND DIGITAL LOGIC - Methods for controlling catalysis of a chemical reaction generally includes electrostatically controlling position of a first linear single-molecule polymer inside at least one nanopore fluidly coupled to a reaction chamber comprising a reaction medium and at least one reactant, wherein the first linear single-molecule polymer is coupled to a first catalyst at one end and includes one or more charged sub-units; and creating an electrostatic potential well inside the nanopore, wherein the electrostatic potential well controls a position of the first linear single-molecule polymer inside the at least one nanopore. Also disclosed are apparatuses for controlling catalysis of the chemical reaction.11-17-2011
20080197014Reactor, Plant And Industrial Process For The Continuous Preparation Of High-Purity Silicon Tetrachloride or High- Purity Germanium Tetrachloride - A reactor, a plant, and a continuous, industrial process carried out therein for preparing high-purity silicon tetrachloride or high-purity germanium tetrachloride by treating the silicon tetrachloride or germanium tetrachloride to be purified, which is contaminated by at least one hydrogen-containing compound, by a cold plasma and isolating purified high-purity silicon tetrachloride or germanium tetrachloride from the resulting treated phase by fractional distillation. The treatment is carried out in a plasma reactor in which longitudinal axes of a dielectric, of a high-voltage electrode, and of a grounded, metallic heat exchanger are oriented parallel to one another and at the same time parallel to the force vector of gravity.08-21-2008
20090008239REMOTE INDUCTIVELY COUPLED PLASMA SOURCE FOR CVD CHAMBER CLEANING - The present invention generally includes a remote plasma source and a method of generating a plasma in a remote plasma source. Cleaning gas may be ignited into a plasma in a remote location and then provided to the processing chamber. By flowing the cleaning gas outside of a cooled RF coil, a plasma may be ignited at either high or low pressure while providing a high RF bias to the coil. Cooling the RF coil may reduce sputtering of the coil and thus reduce undesirable contaminants from being fed to the processing chamber with the cleaning gas plasma. Reduced sputtering from the coil may extend the useful life of the remote plasma source.01-08-2009
20100012479Mechanism for Direct-Water-Splitting Via Piezoelectrochemical Effect - A mechanism of initiating a redox reaction, such as hydrogen gas production by direct-water-splitting, is provided in which a piezoelectric material is mechanically stressed by actively applying a mechanical stress to the material. The mechanical stress applied to the piezoelectric material causes an electrical potential build up on the surface of the material due to the piezoelectric properties of the material. When the piezoelectric material stressed in this manner is placed in direct contact with the redox reaction reactant(s), the potential on the polarized surface can be used as chemical driving energy to initiate the reaction, such as to split water and generate hydrogen gas. In this manner the mechanical energy applied to the piezoelectric material, such as vibration energy from natural or man-made sources, can be converted directly into chemical energy to initiate the reaction.01-21-2010
20110297532APPARATUS AND METHOD FOR PRODUCING PLASMA DURING MILLING FOR PROCESSING OF MATERIAL COMPOSITIONS - An apparatus, such as a plasma generation system, is provided. The apparatus can include a chamber that may be formed, for example, substantially of insulating material. The chamber can be configured to establish therein a stable glow discharge plasma having a pressure of at least about atmospheric pressure while vibrating a sample so as to be milled by bodies contained by the chamber. For example, the chamber may vibrate and/or rotate, and the chamber can include at least one body that includes insulating material and is free within the chamber. Associated methods are also provided.12-08-2011
20110290637SENSING AND CONTROL FOR PLASMA-ASSISTED WASTE GASIFICATION - A plasma-assisted waste gasification system including a sensing mechanism and process for converting waste stream reaction residues into a clean synthesis gas (syngas) is disclosed. The gasification system includes a first sensor located between a gas quench unit and a heat recovery unit to measure a first temperature and first flow rate of the synthesis gas exiting the gas quench unit; a second sensor to measure a second temperature and a second flow rate of a low temperature synthesis gas entering the gas quench unit; wherein the first sensor and the second sensor are connected to an inferential sensing mechanism. The inferential sensing mechanism is capable of estimating the temperature of the synthesis gas in the reactor, based on the measured first temperature and first flow rate, and the measured second temperature and second flow rate, using a mass-energy balance relationship that is based on the measurements of the two sensors. Another aspect of the invention relates to a control unit to control the temperature of the reactor to a required operating temperature range.12-01-2011
20090000942PULSE PLASMA MATCHING SYSTEMS AND METHODS INCLUDING IMPEDANCE MATCHING COMPENSATION - A pulse plasma matching system includes an RF matching box configured to receive an RF power pulse generated by an RF power source, configured to perform a plasma impedance matching, and configured to apply the RF power pulse to a process chamber, and a network analyzer configured to measure an impedance of plasma generated in a process chamber. A controller is configured to generate a capacitance control signal corresponding to a plasma impedance value measured by the network analyzer, configured to supply the capacitance control signal to the RF matching box, and configured to generate an impedance matching compensation pulse, and a phase shifter is configured to receive the impedance matching compensation pulse and to shift a phase of the impedance matching compensation pulse to synchronize the impedance matching compensation pulse to the RF power pulse.01-01-2009
20110005917METHOD FOR PURIFYING SILICON FOR PHOTOVOLTAIC APPLICATIONS - The disclosure relates to a method for purifying silicon by exposing liquid silicon to a plasma, wherein the silicon flows continuously into a channel so that the free surface thereof is exposed to the plasma. The disclosure also relates to a device for implementing the method.01-13-2011
20100032286RAPID SYNTHESIS OF SILICON CARBIDE-CARBON COMPOSITES - Production of pore-free carbon/carbon-silicon carbide composite materials with mechanical properties making them suitable for use in such applications as the production of aircraft landing system brake components including brake discs. The method includes: providing a porous carbon-carbon composite preform; surrounding the porous carbon-carbon composite preform with silicon powder to form an intermediate construct; applying a uniaxial load to the construct; applying direct electrical current to an assembly containing the loaded construct of porous carbon-carbon preform surrounded by silicon powder, thereby melting the silicon powder and infiltrating the pores of the carbon-carbon preform with liquid silicon; and initiating a combustion-type reaction between the silicon and carbon in the preform, thereby forming silicon carbide in the preform.02-11-2010
20090308730Hollow cathode plasma source for bio and chemical decotaminiation of air and surfaces - Hollow cathode source pollution abatement systems for the remediation of chemical and microbiological pollutants are disclosed. The systems comprise a plasma generator having a hollow cathode source (HCS) for generating plasma to break down pollutant chemicals and microorganisms into simpler byproducts. The byproducts are trapped on an inner surface of the HCS. The systems allow for elimination of pollutant chemicals and microorganisms from air or gas streams as well as from the surfaces of articles. Methods of operating such systems are also disclosed.12-17-2009
20090120782Atmospheric Treater With Roller Confined Discharge Chamber - A continuous feed discharge surface treater for treating web materials has a discharge chamber where ionization of a process gas occurs defined and contained by one or more rollers. Enhanced chemical coronas and plasmas are achieved by limiting depletion of the gas chemistry from the discharge chamber and dilution or contamination from mixing with drawn in ambient air. Atmospheric coronas can also be achieved in which minimal or no ozone is exhausted from the treater. Various roller and electrode assemblies, including both fixed and rolling electrodes, can be employed.05-14-2009
20080237030SURFACE PROCESSING METHOD FOR MOUNTING STAGE - A surface processing method for a mounting stage, which enables a mounting surface conforming to a substrate to be formed while saving time and effort. The substrate is mounted on a mounting surface of the mounting stage disposed in a housing chamber of a substrate processing apparatus that carries out plasma processing on the substrate. The mounted substrate is thermally expanded.10-02-2008
20090277775REACTOR FOR REMOVING CHEMICAL AND BIOLOGICAL CONTAMINANTS FROM A CONTAMINATED FLUID - A reactor apparatus and method for removing chemical and biological contaminants from a contaminated fluid while minimizing disinfection by-products, sludges, and harmful residue. The reactor has a sequential, multi-stage, reaction vessel with an upper end region and a lower end region. The vessel has a liquid inlet port into which the contaminated fluid may pass. Treated liquid may exit the reactor through a liquid outlet port. A gas inlet port and a gas outlet port are provided. A plurality of stacked reaction chambers have a sieve tray and flange assembly, the sieve tray having holes up through which a gaseous phase may pass. A gas phase electrode, an electrical power supply capable of producing pulsed electrical discharges connected thereto, and a liquid phase electrode are provided. The electrodes create therebetween a pulsed corona discharge for generating reactive species in situ and destroying bacterial contaminants in the liquid. A weir-downcomer tube has an upper portion situated above a level of liquid in the associated chamber. The lower portion is situated below a level of liquid in a reaction chamber next below. The weir-downcomer tube minimizes or prevents back flow of liquid from a reaction chamber to an upstream reaction chamber.11-12-2009
20090294275METHOD OF PLASMA LOAD IMPEDANCE TUNING BY MODULATION OF A SOURCE POWER OR BIAS POWER RF GENERATOR - A method of processing a workpiece in a plasma reactor chamber in which plasma RF source and bias power is delivered into the chamber, by sensing fluctuations in a plasma parameter such as load impedance or reflected power at one of the generators, and modulating the output of the other generator to minimize the fluctuation.12-03-2009
20090277776METHOD AND APPARATUS FOR PLASMA-TREATING POROUS BODY - A method for plasma-treating a porous body, comprising the steps of generating plasma using an inert gas or a mixed gas of an inert gas and a reactive gas, (a) blowing the resultant plasma gas to the porous body at a flow rate per a unit area of the porous body of 0.002 to 2 L/minute/cm11-12-2009
20080237031PLASMA PROCESSING APPARATUS, RADIO FREQUENCY GENERATOR AND CORRECTION METHOD THEREFOR - A plasma processing apparatus includes a radio frequency generator capable of adjusting a target output power level based on the set power level and the offset level to output radio frequency power; a chamber in which a plasma process is performed; and a power detection unit for measuring radio frequency power level fed to the matching unit. The plasma processing apparatus further includes a generator control unit for controlling the radio frequency power such that the radio frequency power level fed to the matching unit reaches the set power level by calculating the offset level based on the difference between the set power level and the power level measured by the power detection unit and transmitting the set power level and the offset level in digital form to the data input terminal of the radio frequency generator.10-02-2008
20090166179Induction Device - A device for sustaining a plasma in a torch is provided. In certain examples, the device comprises a first electrode configured to couple to a power source and constructed and arranged to provide a loop current along a radial plane of the torch. In some examples, the radial plane of the torch is substantially perpendicular to a longitudinal axis of the torch.07-02-2009
20080277269Collecting particles from a fluid stream via thermophoresis - A method of collecting particles from a gas-particle stream having a first temperature and a plurality of particles, the method comprising: cooling an interior surface of a collection chamber to a second temperature less than the first temperature of the gas-particle stream; flowing the gas-particle stream through the chamber, wherein the gas-particle stream is directed along the cooled interior surface of the collection chamber, and a temperature gradient between the gas-particle stream and the cooled interior surface creates a thermophoretic force; and the thermophoretic force attracting the particles from the gas-particle stream to the interior surface of the collection chamber, wherein the particles are deposited onto the interior surface of the collection chamber.11-13-2008
20080277272Methods and Apparatuses for Making Liquids More Reactive - This invention relates generally to novel methods for affecting, controlling, and/or directing various reactions with and in various liquids (such as water) by creating an energy field within and/or juxtaposed to at least one surface of said liquid. An important aspect of the invention involves the creation of a plasma, which plasma is created between at least one electrode located above the surface of the liquid and at least a portion of the surface of the liquid itself, which functions as at least one second electrode. In order to permit at least a portion of the surface of the liquid to function effectively as a second electrode, at least one additional electrically conducting electrode is typically located within (e.g., at least partially submerged within) said liquid. The plasma results in a restructuring of the liquid and/or the presence of at least one active species within said liquid.11-13-2008
20080277270Method and apparatus for making uniform and ultrasmall nanoparticles - A system comprising: a plasma production chamber configured to produce a plasma; a reaction chamber vaporize a precursor material with the plasma to form a reactive mixture; a quench chamber having a frusto-conical surface and a quench region formed within the quench chamber between an ejection port of the reaction chamber and a cooled mixture outlet, wherein the quench region configured to receive the reactive mixture from the ejection port, to cool the reactive mixture to form a cooled mixture, and to supply the cooled mixture to the cooled mixture outlet; and a conditioning fluid injection ring disposed at the ejection port and configured to flow a conditioning fluid directly into the reactive mixture as the reactive mixture flows through the ejection port, thereby disturbing the flow of the reactive mixture, creating turbulence within the quench region and cooling the reactive mixture to form a cooled mixture comprising condensed nanoparticles.11-13-2008
20080277268Fluid recirculation system for use in vapor phase particle production system - A method of and system for recirculating a fluid in a particle production system. A reactor produces a reactive particle-gas mixture. A quench chamber mixes a conditioning fluid with the reactive particle-gas mixture, producing a cooled particle-gas mixture that comprises a plurality of precursor material particles and an output fluid. A filter element filters the output fluid, producing a filtered output. A temperature control module controls the temperature of the filtered output, producing a temperature-controlled, filtered output. A content ratio control module modulates the content of the temperature-controlled, filtered output, thereby producing a content-controlled, temperature-controlled, filtered output. A channeling element supplies the content-controlled, temperature-controlled, filtered output to the quench chamber, wherein the content-controlled, filtered output is provided to the quench chamber as the conditioning fluid to be used in cooling the reactive particle-gas mixture.11-13-2008
20080283386Methods of removing aerosols from the atmosphere - An antenna is disclosed to efficiently ionize the atmosphere for the purpose of reducing the aerosol counts, and therefore the number of poluted particles in suspension in the atmosphere, by deposition to ground. The antenna includes peripheral nodes and a central node. Each of the peripheral nodes is connected to adjacent peripheral nodes through peripheral spokes. The peripheral nodes are also connected to the central node through radial spokes. Electric power is applied to the peripheral spokes and the radial spokes causing the antenna to charge the atmosphere through the emission of ions. The antenna minimizes an attenuation factor that reduces ionization efficiency and reduces the land requirements for its installation.11-20-2008
20080308409EMBEDDED MULTI-INDUCTIVE LARGE AREA PLASMA SOURCE - Plasma generating devices, systems and processes are provided in which hybrid capacitively coupled plasma (CCP) and inductively coupled plasma (ICP) sources use a plurality of primary plasma generating cells embedded into large area electrode or elsewhere in communication with a plasma processing chamber. Plasma is generated and maintained by a shaped low-inductance element within each of a plurality of locally enhanced ICP micro-cells coupled to the chamber through a CCP electrode. The source is suitable for processing large diameter (300 mm and larger) semiconductor wafers and large area panels, including plasma screen displays.12-18-2008
20100126847Apparatus and Method for Controlling Plasma Density Profile - A number of RF power transmission paths are defined to extend from an RF power source through a matching network, through a transmit electrode, through a plasma to a number of return electrodes. A number of tuning elements are respectively disposed within the number of RF power transmission paths. Each tuning element is defined to adjust an amount of RF power to be transmitted through the RF power transmission path within which the tuning element is disposed. A plasma density within a vicinity of a particular RF power transmission path is directly proportional to the amount of RF power transmitted through the particular RF power transmission path. Therefore, adjustment of RF power transmitted through the RF power transmission paths, as afforded by the tuning element, enables control of a plasma density profile across a substrate.05-27-2010
20080277271Gas delivery system with constant overpressure relative to ambient to system with varying vacuum suction - A system operating in an environment having an ambient pressure, the system comprising: a reactor configured to combine a plasma stream, powder particles and conditioning fluid to alter the powder particles and form a mixture stream; a supply chamber coupled to the reactor; a suction generator configured to generate a suction force at the outlet of the reactor; a fluid supply module configured to supply the conditioning fluid at an original pressure; and a pressure regulation module configured to: receive the conditioning fluid from the fluid supply module, reduce the pressure of the conditioning fluid from the original pressure to a selected pressure relative to the ambient pressure regardless of any changes in the suction force at the outlet of the reactor, and supply the conditioning fluid at the selected pressure to the supply chamber.11-13-2008
20090090615Apparatus and method for controlling the oxidation state of catalyst - An apparatus is disclosed for controlling the oxidation state of catalyst for use in a fuel cell. The apparatus includes a holder, a working electrode disposed in the holder, an auxiliary electrode located right above the working electrode, a reference electrode disposed in the holder and a power supply connected to all of the electrodes.04-09-2009
20120061233APPARATUSES AND METHODS FOR REDUCING POLLUTANTS IN GAS STREAMS - Apparatuses and methods for reducing pollutants in a gas stream are disclosed. The gas stream is introduced into a condensation chamber to condense the gas stream. It then proceeds into a first reaction chamber adapted to electrochemically alter the gas stream. From there, the gas stream is directed into a reduction chamber adapted to reduce pollutants and a resonance chamber adapted to ionize the gas stream. The gas stream is then directed into a second reaction chamber adapted to further reduce pollutants in the stream. After treatment, the gas stream may be discharged into the atmosphere or recirculated through the apparatus to further reduce pollutants in the gas stream, the latter providing for a closed-looped system.03-15-2012
20120067716Method and Apparatus for Detecting Ionisable Gases in Particular Organic Molecules, Preferably Hydrocarbons - The invention relates to a method for detecting gases that can be ionized wherein an atmospheric plasma jet is produced, wherein a gas mixture is brought into interaction with the plasma jet, and wherein an electrical quantity is measured as a measure of the concentration of the gas in the gas mixture. The invention further relates to a device for detecting gases that can be ionized, including a gas inlet, means for ionizing a gas, a voltage source, two electrodes, and means for determining an amperage, wherein the two electrodes are connected to the voltage source, wherein the means for determining an amperage are connected to the electrodes in such a way that the magnitude of the current flowing between the electrodes can be measured, and wherein a plasma nozzle is provided to produce an atmospheric plasma jet.03-22-2012
20090152097PLASMA GENERATING DEVICE AND PLASMA GENERATING METHOD - The present invention relates to a plasma generating device having a first and a second electrode (06-18-2009
20090152096METHOD AND SYSTEM FOR THE APPLICATION OF MATERIALS TO IMPROVE INDOOR AIR QUALITY - A system for treating a surface to prevent or limit offensive odors and/or microbiological activity and improve indoor air quality includes electrostatically charged particles of anatase titanium dioxide and a substrate or surface on which these particles are received. The electrostatic charging of the particles, in conjunction with the substrate being oppositely charged, provides a self-leveling effect to the particles. The particles may be incorporated into an HVAC system defined by ductwork in which untreated air including organic matter flows, is treated, and is ejected as clean air. Methods of treating surfaces or fluids containing organic matter include providing electrostatically charged particles of anatase titanium dioxide and contacting the organic matter therewith to initiate photocatalytic oxidation processes in which the organic matter is broken down into less offensive constituents such as carbon dioxide and water.06-18-2009
20090250335Method of controlling plasma distribution uniformity by superposition of different constant solenoid fields - A method for processing a workpiece in a plasma reactor having a set of n coils includes constructing, for each one of the n coils, a set of plasma distributions for discrete values of coil current in a predetermined current range. The distributions are grouped, each group having one distribution for each of the n coils, and being a unique set of n distributions. A combined plasma distribution is computed from each group of distributions. The variance of each combined distribution is computed. The method further includes finding an optimum one of the combined distributions having an at least nearly minimum variance, and identifying the n coil currents associated with the optimum distribution. During plasma processing of the workpiece, currents through the coils are maintained at levels corresponding to the n coil currents associated with the one combined distribution.10-08-2009
20090255801Programmable Electrode Arrays and Methods for Manipulating and Sensing Cells and Substances Using Same - This invention pertains to densely integrated programmable electrode arrays for sensing and manipulating biological cells and substances. Using the programmable electrode arrays according to a method of the invention, it is possible to generate arbitrary, dynamically reconfigurable electric field patterns on and around the electrodes at magnitudes which have been shown to induce neurite outgrowth and enhance cellular regeneration of damaged tissue. It is also possible to use the programmable electrode arrays to sense signals coupled to or in close proximity with the electrodes of the array, and to program arbitrary gain, calibration and offsets onto the individual electrodes of the array and/or their associated circuit elements.10-15-2009
20090255800PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD, AND COMPUTER READABLE STORAGE MEDIUM - A plasma processing apparatus includes a vacuum evacuable processing chamber; a first electrode for supporting a substrate to be processed in the processing chamber; a processing gas supply unit for supplying a processing gas into a processing space; a plasma excitation unit for generating a plasma by exciting the processing gas in the processing chamber; a first radio frequency power supply unit for supplying a first radio frequency power to the first electrode to attract ions in the plasma to the substrate; and a first radio frequency power amplitude modulation unit for modulating an amplitude of the first radio frequency power at a predetermined interval. The plasma processing apparatus further includes a first radio frequency power frequency modulation unit for modulating a frequency of the first radio frequency power in substantially synchronously with the amplitude modulation of the first radio frequency power.10-15-2009
20090260974Apparatus and method for manufacturing halogen gas and halogen gas recovery and circulatory system - The present invention provides a method and apparatus for manufacturing halogen gas using a plasma chemical reaction, with the features of having simplicity, practicality, and maintaining safety in handling source materials and of being able to manufacture halogen gas in the same facility where halogen gas is used, and also provides a halogen gas circulatory and recovery system capable of circulating and using halogen gas efficiently. After the gas expressed in the chemical formula A10-22-2009
20090242383APPARATUS AND METHOD FOR RF GROUNDING OF IPVD TABLE - An IPVD source assembly and method is provided for supplying and ionizing material for coating a semiconductor wafer. The assembly includes a process space containing a plasma and an electrostatic chuck moveable in to and out of the process space. The chuck is configured to support the semiconductor wafer. The assembly further includes a first shield in electrical communication with a table and a second shield. The first shield is configured to shield at least a portion of the electrostatic chuck when the chuck is in the process space and the second shield is configured to shield at least a portion of a space below the electrostatic chuck and the process space. A conducting element electrically connects the second shield to the table to substantially prevent a formation of a second plasma in the space below the electrostatic chuck and the process space.10-01-2009
20090250336METHOD AND APPARATUS FOR THE TREATMENT OF DISPERSED MATERIAL - In a method for treatment of a dispersed material in a plasma, in which a plasma-forming gas is introduced into a reaction chamber and ionized and a dispersed material is introduced into the reaction chamber and into the area of the plasma, treated under the action of the plasma, and subsequently removed from the area of the plasma, the introduction of the plasma-forming gas and the introduction of the dispersed material are performed independently of one another and from different directions. In an apparatus for treatment of a dispersed material in a plasma, which comprises a reaction chamber having a plasma generator, a first inlet for a plasma-forming gas, and a second inlet for the dispersed material, the second inlet is situated spatially separated in relation to the first inlet so that the dispersed material is conducted from the outside into the plasma.10-08-2009
20090250334PLASMA GENERATOR SYSTEMS AND METHODS OF FORMING PLASMA - Systems and methods of forming plasma are provided. In an embodiment, a plasma generator system is provided including a container, a single coil disposed around the container, the single coil being a single member and having a first end, a second end, a first winding, and a second winding, wherein the first winding extends from the first end, and the second winding is integrally formed as part of the first winding and extends to the second end, an energy source electrically coupled directly to the first end of the single member, and a capacitor electrically coupled directly to the second end of the single member.10-08-2009
20100175987A SURFACE DIELECTRIC BARRIER DISCHARGE PLASMA UNIT AND A METHOD OF GENERATING A SURFACE PLASMA - The invention relates to a surface dielectric barrier discharge plasma unit. The unit comprises a solid dielectric structure provided with an interior space wherein an interior electrode is arranged. Further, the unit comprises a further electrode for generating in concert with the interior electrode a surface dielectric barrier discharge plasma. The unit is also provided with a gas flow path along a surface of the structure.07-15-2010
20120193215METHOD AND APPARATUS FOR TREATING A SYNGAS - Treating a synthesis gas includes generating a plasma jet from a non-transferred arc torch having a main axis, the jet having a propagation axis substantially collinear with the torch main axis. The plasma torch is mounted on a feed enclosure. The syngas is received at an inlet port of the feed enclosure, downstream from the plasma torch and feeding the syngas so the flow encounters the plasma jet to mix the syngas and plasma jet in a distribution chamber. The mixture is propagated in a reactor downstream from the feed enclosure to convert the syngas into an outlet gas. The reactor is in communication in its upstream portion with the feed enclosure through a flared segment, and has a longitudinal axis that is substantially collinear with the propagation axis of the plasma jet. The outlet gas is extracted via an outlet port and particles are captured by a submerged conveyor.08-02-2012
20090260972Plasma Generator and Method of Generating Plasma Using the Same - A plasma generator in which the variation of the impedance in the cavity before and after plasma is ignited is less and hardly affected by the shape of the cavity, and the ignitability of the plasma is improved and a method of generating plasma using the plasma generator are provided. The plasma generator comprises a nonconductive gas flow pipe (10-22-2009
20090314628METHODS FOR PROCESSING SUBSTRATES COMPRISING METALLIC NANOPARTICLES - Methods for processing substrate surfaces comprising metallic nanoparticles are disclosed. The methods involve providing a substrate surface comprising metallic nanoparticles, and exposing the substrate surface to a plasma.12-24-2009
20100147676HONEYCOMB STRUCTURE AND METHOD OF USING THE STRUCTURE - A method of using honeycomb material having opposite surfaces and flow channels between the surfaces, includes directing fluid flow through the channels while applying a voltage between the surfaces and across fluid flowing in the channels. A method of using honeycomb material that includes at least one electrode, the honeycomb material and electrode be useful in an electrical or electronic device, includes using the honeycomb material to support or to suspend the electrical or electronic device. An apparatus includes a honeycomb structure of dielectric material having a number of flow channels therethrough, an electrode at a surface of the dielectric material responsive to electrical input to apply an electrical response alone or with regard to another electrode, the honeycomb structure having cohesive strength and rigidity to support itself and the electrode from in suspended relation.06-17-2010
20100163403Plasma processing apparatus and operation method thereof - In a plasma processing apparatus including a processing chamber in a vacuum container to form plasma in the processing chamber in which pressure is reduced, a sample stage in lower part of inside of the processing chamber and having an upper surface on which a wafer to be processed by plasma is put, a plurality of pins in the sample stage to be moved in vertical direction so that the pins abut against rear side of the wafer to move the wafer up and down over the upper surface of the sample stage, and a plurality of openings formed in the upper surface of the sample stage so that the pins are moved in the openings, gas is fed from supply ports communicating with the openings into the processing chamber through the openings when the wafer is not put on the upper surface of the sample stage.07-01-2010
20090314629MICROWAVE PLASMA PROCESSING APPARATUS AND METHOD OF SUPPLYING MICROWAVES USING THE APPARATUS - A transmission path of microwaves even after a temperature increases, is maintained in an appropriate state. A microwave plasma processing apparatus performs plasma processing on a substrate by exciting gas due to the electric field energy of microwaves emitted from a slot plate of a radial line slot antenna (RLSA). The microwave plasma processing apparatus includes: a processing container in which plasma processing is performed; a microwave source outputting microwaves; a rectangular waveguide transmitting the microwaves outputted from the microwave source; a coaxial converter converting a mode of the microwaves transmitted to the rectangular waveguide; a coaxial waveguide transmitting the microwaves of which the mode is converted by the coaxial converter; a taper-shaped connector attached to an inner conductor of the coaxial waveguide without contacting the slot plate; and an elastic body electrically connecting the taper-shaped connector and the slot plate.12-24-2009
20090294276METHOD AND APPARATUS OF FORMING DOMAIN INVERSION STRUCTURES IN A NONLINEAR FERROELECTRIC SUBSTRATE - A crystal poling apparatus has as ingle-domain ferroelectric substrate (e.g. MgO doped LiNbO3 substrate), a sample holder, a high voltage source, a corona torch, a gas source, a chamber, and at least one vacuum pump. An electrode with a certain structure (e.g. a periodical pattern) is formed on the first surface of the substrate, and the substrate is set with the electrode facing down on top of the sample holder. The electrode is grounded so that high electric field is formed in the area with electrode due to the formation of charges generated by the corona torch on the second surface of the substrate. The charge distribution on the second surface of the substrate is controlled by the high voltage source and the gas source. To achieve the optimized crystal poling, the temperature of the substrate is set by the temperature controller, and the electrode on the first surface of the substrate is isolated by the vacuum pump.12-03-2009
20100236917PLASMA GENERATING APPARATUS AND PLASMA GENERATING METHOD - An impedance matching device is provided with a basic element having variable characteristic parameters for impedance matching, and an auxiliary element having variable characteristic parameters. At the time of generating plasma by using the impedance matching device, the characteristic parameters of the basic element of each antenna element are fixed, respectively, and the characteristic parameters of the auxiliary element are adjusted for each antenna element. Thus, in an adjusted status where impedance matching for each antenna element is adjusted, each antenna element of an antenna array is fed with a high frequency signal, an electromagnetic wave is radiated from the antenna element, the characteristic parameters of the basic element of each antenna element are synchronized and adjusted, and the impedances of the whole antenna array are matched.09-23-2010
20080314731TECHNIQUES FOR DETECTING WAFER CHARGING IN A PLASMA PROCESSING SYSTEM - Techniques for detecting wafer charging in a plasma processing system are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for detecting wafer charging in a plasma processing system. The apparatus may comprise a plasma chamber to produce a plasma discharge above a wafer in the plasma chamber. The apparatus may also comprise a biasing circuit to bias the wafer to draw ions from the plasma discharge towards the wafer. The apparatus may further comprise a detection mechanism to detect charge buildup on the wafer by measuring an electric field in one or more designated locations near a top surface of the wafer.12-25-2008
20100300871PRESSURIZED PLASMA ENHANCED REACTOR - The present invention is a vitrification and gasification system that operates at elevated pressures. The system includes a processing chamber having numerous penetrations, and seals for effectively sealing the penetrations to the processing chamber.12-02-2010
20090321245GENERATION OF COUPLED PLASMA DISCHARGES FOR USE IN LIQUID-PHASE OR GAS-PHASE PROCESSES - A method of stimulating chemical reactions within a fluid media uses a gas plasma ejected from a gas-buffered microhollow cathode discharge apparatus into the fluid media. The apparatus has an electrically-conductive housing with an electrode positioned therein such as to create air channels between the electrode and the housing. The electrode is electrically insulated from the housing except at a location near the plasma outlet. A DC voltage is applied across the electrode and housing to accelerate the plasma and eject it into the fluid media. In another aspect, the housing includes a cup portion and a conduit portion that are electrically isolated from each other. When a DC voltage is applied across the electrode and the conduit, the plasma is ejected and filamentous discharges occur between the cup and the conduit. Such multicavity coupled plasma discharges provide voltage amplification and DC pulses with rates in the nanosecond regime.12-31-2009
20110240460DEVICE AND METHOD FOR GENERATING A PLASMA FLOW - The invention relates to a device generating a plasma flow comprising an electrically conductive housing, tubular in shape, forming a central channel traversed by a vortex gas, a central electrode arranged coaxially in said channel and an electric power source intended to apply an electric voltage V between the electrode and the housing, characterised in that the mean diameter of the channel formed by the housing decreases progressively from an area situated substantially at the level of the free end of the electrode as far as an end area of said housing, said end area being configured in such a way that the minimum electric voltage Vcmin(0) to be applied in order to develop an electric arc between said electrode and said end area is strictly greater than said voltage V.10-06-2011
20090218212HOLLOW CATHODE DEVICE AND METHOD FOR USING THE DEVICE TO CONTROL THE UNIFORMITY OF A PLASMA PROCESS - A chamber component configured to be coupled to a processing chamber is described. The chamber component comprises one or more adjustable gas passages through which a process gas is introduced to the process chamber. The adjustable gas passage may be configured to form a hollow cathode that creates a hollow cathode plasma in a hollow cathode region having one or more plasma surfaces in contact with the hollow cathode plasma. Therein, at least one of the one or more plasma surfaces is movable in order to vary the size of the hollow cathode region and adjust the properties of the hollow cathode plasma. Furthermore, one or more adjustable hollow cathodes may be utilized to adjust a plasma process for treating a substrate.09-03-2009
20110174606Apparatus and Method for Improving Photoresist Properties Using a Quasi-Neutral Beam - The invention can provide apparatus and methods of processing a substrate in real-time using a Quasi-Neutral Beam (Q-NB) curing system to improve the etch resistance of photoresist layer. In addition, the improved photoresist layer can be used to more accurately control gate and/or spacer critical dimensions (CDs), to control gate and/or spacer CD uniformity, and to eliminate line edge roughness (LER) and line width roughness (LWR).07-21-2011
20100126846Method and apparatus for an efficient Hydrogen production - Disclosed is a method, apparatus and system for sorting ions. According to some embodiments of the present invention, ions may be sorted to produce hydrogen gas from water. The apparatus may include a first electric field source, an insulation layer to electrically isolate the first field sources from the water, a first deionization surface within a field line of the first field source; and a conductor connected to the first deionization surface and adapted to discharge charge built up due to attracted ions at the first deionization surface.05-27-2010
20110079506CASCADE SOURCE AND A METHOD FOR CONTROLLING THE CASCADE SOURCE - A cascade source provided with a cathode housing, a number of cascade plates insulated from each other and stacked on top of each other which together bound at least one plasma channel, and an anode plate provided with an outflow opening connecting to the plasma channel, wherein one cathode is provided per plasma channel, which cathode comprises an electrode which is adjustable relative to the cathode housing in the direction of the plasma channel, wherein the clamping provision is preferably of the collet chuck type. Also described is method for controlling the cascade source in use.04-07-2011
20100032285METHOD OF PLASMA TREATMENT OF A SURFACE - The present invention includes methods of plasma treating a surface of an object. A hollow body, which has one wall made of dielectric material, is filled with a process gas and sealed to form a gas-tight inner chamber having an internal pressure of at least 0.5 bar. The hollow body is then positioned in a space between two electrodes. The space has an external pressure of at least 0.5 bar and is filled with a gas which has a higher ignition field strength than the process gas. A plasma is then ignited in the inner chamber of the hollow body by applying a sufficiently high alternating voltage to the electrodes.02-11-2010
20080314733Methods of and apparatus for reducing amounts of particles on a wafer during wafer de-chucking - Particles are trapped away from a wafer transport zone in a chamber. A first electrode is on one side of the zone. A second electrode is on an opposite side of the zone. A power supply connected across the electrodes establishes an electrostatic field between the electrodes. The field traps particles at the electrodes, away from the zone. For transporting the wafer from the chamber, the second electrode mounts the wafer for processing, and the first electrode is opposite to the second electrode defining a process space. The zone is in the space with a separate part of the space separating the zone from each electrode. Particles are urged away from the wafer by simultaneously terminating plasma processing of the wafer, connecting the second electrode to ground, applying a positive DC potential to the first electrode, and de-chucking the wafer from the second electrode into the zone.12-25-2008
20080314732Methods and systems for generating and using plasma conduits - Systems are disclosed for providing a plasma conduit maintaining ionized particles within a perforation hole in a body, and a power source configured to provide electrical power through the plasma conduit. Methods are disclosed for detonating a plasma generator, the detonation forming a plasma conduit within a body perforation hole, and connecting a power source to the plasma conduit, the power source configured to provide electrical power through the plasma conduit. Systems are also disclosed for generating a plasma conduit. The system includes two or more explosive devices containing ionizable material, and the explosive devices are adapted to, upon detonation, form a plasma conduit in a body by generating intersecting perforation holes including plasma for conducting electrical energy from a power source.12-25-2008
20080202915Methods and apparatus for ionization and desorption using a glow discharge - A method for ionizing and desorbing a sample for analysis includes energizing a first and second electrode to produce a glow discharge at atmospheric pressure. The method further includes supplying a carrier gas to at least a portion of the glow discharge to create effluents thereof. The method further includes conducting the effluents of the glow discharge to the sample to ionize and desorb the sample for analysis. An associated apparatus is also disclosed.08-28-2008
20110011729Method and apparatus for inductive amplification of ion beam energy - Accelerated charged particles are provided by inductive amplification of particle energy in connection with a deflagration-mode plasma discharge. The deflagration mode discharge tends to increase particle energy relative to other operating modes. Inductive amplification of particle energy further increases output particle velocity. Inductive amplification can occur by formation of a current loop in the plasma discharge, and/or by a sudden increase in inductance due to collapse of the current distribution of the plasma discharge. Applications include particle therapy and production of radio-isotopes.01-20-2011
20100282597METHOD FOR CONTROLLING PLASMA DENSITY DISTRIBUTION IN PLASMA CHAMBER - A method for controlling plasma density distribution in a plasma chamber in order to control a critical dimension (CD) and obtain uniformity of an etching rate. The plasma density distribution control method is used to fabricate a semiconductor device in the plasma chamber and comprises the steps of establishing an intended plasma density distribution in the plasma chamber and controlling a voltage distribution in the plasma chamber with relation to the established plasma density distribution.11-11-2010
20100140077EXCITED GAS INJECTION FOR ION IMPLANT CONTROL - An ion source that utilizes exited and/or atomic gas injection is disclosed. In an ion beam application, the source gas can be used directly, as it is traditionally supplied. Alternatively or additionally, the source gas can be altered by passing it through a remote plasma source prior to being introduced to the ion source chamber. This can be used to create excited neutrals, heavy ions, metastable molecules or multiply charged ions. In another embodiment, multiple gasses are used, where one or more of the gasses are passed through a remote plasma generator. In certain embodiments, the gasses are combined in a single plasma generator before being supplied to the ion source chamber. In plasma immersion applications, plasma is injected into the process chamber through one or more additional gas injection locations. These injection locations allow the influx of additional plasma, produced by remote plasma sources external to the process chamber.06-10-2010
20090260973METHOD AND APPARATUS FOR TREATING A PROCESS VOLUME WITH MULTIPLE ELECTROMAGNETIC GENERATORS - A method and apparatus are described that couples a plurality of electromagnetic sources to a material for the purpose of either processing the material or promoting a chemical reaction. The apparatus couples various electromagnetic sources of various frequencies, including provision for static magnetic fields, radio frequency fields, and microwave fields, with the possibility of applying them all simultaneously or in any combination.10-22-2009
20110259731METHOD AND APPARATUS FOR DISSOCIATING HYDROGEN AND OXYGEN FROM WATER - Water is dissociated into hydrogen and oxygen preferably using an adjacent plasma at or near atmosphere pressure and ambient temperature and generated preferably by a caduceus coil driving a frequency that creates a plasma shear and/or induces resonance in the water molecules.10-27-2011
20110259730DEVICE AND METHOD FOR MICROSTRUCTURED PLASMA TREATMENT - The invention relates to a device for the microstructured plasma treatment of a film substrate, especially of a plastic film Said device comprises a rotatably received cylindrical electrode the surface of which contains or consists of metal, especially chromium, the surface having microstructured depressions, a planar high-voltage electrode the surface of which has a shape complementary to that of the cylindrical electrode and can be arranged on a section of the surface of the cylindrical electrode in a substantially form-fit manner, a transport device for transporting the film substrate to be treated between the surface of the cylindrical electrode and the high-voltage electrode, and a device for feeding a process gas to the surface of the cylindrical electrode and to the interspace between the cylindrical electrode and the high-voltage electrode.10-27-2011
20110186419Apparatus for synthesizing nano particles, and method for synthesizing the nano particles using the same - Disclosed herein is an apparatus for synthesizing nano particles. The apparatus for synthesizing nano particles is configured to include: a plasma generator that generates plasma; a recovery device that recovers the synthesized nano particles; and a cooler that is disposed between the plasma generator and the recovery device and includes a cooling path where the nano particles are synthesized, while material supplied from the plasma generator is cooled, wherein the cooling path is set to have lower cooling temperatures for each section as going to the moving direction of the nano particles.08-04-2011
20090173620COMBINED CHEMISTRY HYDROGEN GENERATION SYSTEM - Embodiments of the invention relate to an apparatus or hydrogen generating system including a galvanic or first hydrogen generator and a thermally-activated or second hydrogen generator connectable to one another.07-09-2009
20080271987SYSTEM AND METHOD FOR PREPARING NANOPARTICLES USING NON-THERMAL PULSED PLASMA - A system for preparing nanoparticles using non-thermal pulsed plasma is provided. The system comprises a reaction chamber having two divided regions, i.e. a first region where nanoparticles are to be formed and a second region where the nanoparticles are to be received, to prevent the formation of a thin film of nanoparticles in the second region. The use of the system enables the preparation of nanoparticles with improved uniformity and high collection efficiency. In addition, collection and deposition of nanoparticles can be simultaneously performed in the second region. Therefore, the system can find applications in various fields, including devices, secondary cells and sensors. Further provided is a method for preparing nanoparticles using the system.11-06-2008
20100300872Methods for Low Temperature Hydrogen Sulfide Dissociation - A method of H12-02-2010
20120055782SELF-REGENERATING PARTICULATE TRAP SYSTEMS FOR EMISSIONS AND METHODS THEREOF - A method and system for treating emissions includes charging particles in an exhaust stream, producing one or more radicals, and oxidizing at least a portion of the charged particles with at least a portion of the produced radicals. At least a portion of the charged particles in the exhaust stream are then attracted on at least one attraction surface which is one of oppositely charged from the charged particles and grounded. The attracted particles are oxidized with another portion of the one or more produced radicals to self regenerate the at least one attraction surface. Downstream from where the attracted particles are oxidized, at least a portion of one or more first compounds in the exhaust stream are converted to one or more second compounds downstream from the attracting. Additionally, at least a portion of any remaining charged particles are oxidized into one or more gases.03-08-2012
20090134009DEVICE FOR CONTROLLING THE DISPLACEMENT OF A VOLUME OF LIQUID BETWEEN TWO OR MORE SOLID SUBSTRATES AND DISPLACEMENT METHOD - The invention relates to a device for displacing a volume of liquid (05-28-2009
20120211350PROCESSES AND APPARATUSES FOR PRODUCING SILICON - Processes or apparatuses for producing silicon by a carbon reduction in an arc furnace using a raw silica material having an iron content, an aluminum content, a calcium content, and a titanium content of 0.1% by mass or less, respectively and using a carbon material, wherein during the carbon reduction, an overcurrent which flows through an electrode of the arc furnace is mitigated using a power regulation unit or that the arc furnace is operated at a hearth power density PD (W/cm08-23-2012
20100270141Detecting and Preventing Instabilities in Plasma Processes - Systems, methods and apparatus for reducing instabilities in a plasma-based processing system are disclosed. An exemplary method includes applying power to a plasma with a power amplifier; determining whether low frequency instability oscillations are present or high frequency instability oscillations are present in the plasma; and altering, based upon whether high or low frequency instability oscillations are present, an impedance of a load that is experienced by the power amplifier, the load experienced by the power amplifier including at least an impedance of the plasma.10-28-2010
20120255854Process For Plasma Treatment Employing Ceramic-Filled Polyamideimide Composite Parts - Internal components of plasma reactors are composed of a toleratable, ceramic filled plasma-useful polymer such as a high temperature engineering thermoplastic, preferably a polyamideimide. The parts exhibit a low erosion rate upon exposure to plasma at low pressure.10-11-2012
20090020413Process and apparatus for purifying silicon tetrachloride or germanium tetrachloride containing hydrogen compounds - The invention relates to a process for the purification's of silicon tetrachloride or germanium tetrachloride contaminated with at least one hydrogen-containing compound, in which the silicon tetrachloride or germanium tetrachloride to be purified is treated in a targeted manner by means of a cold plasma and purified silicon tetrachloride or germanium tetrachloride is isolated from the phase which has been treated in this way. The present invention further relates to an apparatus for carrying out the process of the invention, which comprises a stock and vaporization unit for silicon or germanium tetrachloride (01-22-2009
20120318661Method for Modification of a Methane-Containing Gas Stream - A method for modification of a methane-containing gas stream, comprising the steps of: i) withdrawal of at least one substream from a methane-containing gas stream; ii) treatment of the substream with an electrically generated plasma, generating a modified gas composition which comprises a lower fraction of methane than the methane-containing gas stream used and iii) return of modified gas composition into the methane-containing gas stream. This method makes possible the storage of excess power in a natural gas line grid.12-20-2012
20100187091Continuous Methods for Treating Liquids and Manufacturing Certain Constituents (e.g., Nanoparticles) in Liquids, Apparatuses and Nanoparticles and Nanoparticle /Liquid Solution(s) Therefrom - This invention relates generally to novel methods and novel devices for the continuous manufacture of nanoparticles, microparticles and nanoparticle/liquid solution(s). The nanoparticles (and/or micron-sized particles) comprise a variety of possible compositions, sizes and shapes. The particles (e.g., nanoparticles) are caused to be present (e.g., created and/or the liquid is predisposed to their presence (e.g., conditioned)) in a liquid (e.g., water) by, for example, preferably utilizing at least one adjustable plasma (e.g., created by at least one AC and/or DC power source), which plasma communicates with at least a portion of a surface of the liquid. At least one subsequent and/or substantially simultaneous adjustable electrochemical processing technique is also preferred. Multiple adjustable plasmas and/or adjustable electrochemical processing techniques are preferred. The continuous process causes at least one liquid to flow into, through and out of at least one trough member, such liquid being processed, conditioned and/or effected in said trough member(s). Results include constituents formed in the liquid including micron-sized particles and/or nanoparticles (e.g., metallic-based nanoparticles) of novel size, shape, composition, zeta potential and properties present in a liquid.07-29-2010
20120279850METAL FLUOROPHOSPHATE SYNTHESIS AND USE AS AN ACTIVE MATERIAL FOR A BATTERY ELECTRODE - A method of synthesis of a metal fluorophosphate having the following general formula (1): X11-08-2012
20120090984METHOD AND APPARATUS FOR PURIFYING A SILICON FEEDSTOCK - A method for purifying a silicon-based load to obtain extra-pure silicon, includes:04-19-2012
20120285817METHOD FOR SYNTHESIZING NANO PARTICLES - A method for synthesizing nano particles, including: moving material in a plasma generating space in a first direction; and synthesizing nano particles by cooling the material moved along the first direction, wherein the synthesizing the nano particles may be performed by cooling the material at gradually lower temperatures during the moving thereof in the first direction.11-15-2012
20120138450Immersible Plasma Coil Assembly and Method for Operating the Same - A coil assembly includes an encapsulation structure having a coil placement region formed therein. One or more access ports are formed through the encapsulation structure to the coil placement region. The coil placement region is hermetically sealed by the encapsulation structure outside of the one or more access ports. A coil device is disposed within the coil placement region within the encapsulation structure. Terminals of the coil device are accessible through the one or more access ports formed through the encapsulation structure. The encapsulation structure is formed of a material suitable for exposure to a plasma. The coil assembly can be disposed inside of a plasma processing chamber and above a support structure, such that the coil assembly is in exposure to a plasma generated between the coil assembly and the support structure by radiofrequency power supplied to the coil device within the coil assembly.06-07-2012
20080237029Oxidized Barrier Layer - A method and resultant produce of forming barrier layer based on ruthenium tantalum in a via or other vertical interconnect structure through a dielectric layer in a multi-level metallization. The RuTa layer in a RuTa/RuTaN bilayer, which may form discontinuous islands, is actively oxidized, preferably in an oxygen plasma, to thereby bridge the gaps between the islands. Alternatively, ruthenium tantalum oxide is reactive sputtered onto the RuTaN or directly onto the underlying dielectric by plasma sputtering a RuTa target in the presence of oxygen.10-02-2008
20130092525CONCENTRIC FLOW-THROUGH PLASMA REACTOR AND METHODS THEREFOR - The present invention provides a radiofrequency plasma apparatus for the production of nanoparticles and method for producing nanoparticles using the apparatus. The apparatus is designed to provide high throughput and makes the continuous production of bulk quantities of high-quality crystalline nanoparticles possible. The electrode assembly of the plasma apparatus includes an outer electrode and a central electrode arranged in a concentric relationship to define an annular flow channel between the electrodes.04-18-2013
20130112544METHOD OF MODULATING RELEASE OF BIOMOLECULES HAVING HEPARIN-BINDING AFFINITY - The present invention relates to a method of modulating a release of biomolecules having heparin-binding affinity, and more specifically, to a method of modulating a release of biomolecules having heparin-binding affinity, using thiolated heparin adsorbed on metal surface. According to the present invention, it is possible to modulate various biomolecules having heparin-binding affinity such as growth factors spatiotemporally by external electrical stimulations, without causing cytotoxicity and having deteriorating effects on cell activity. Thus, the present invention can be applied for various biomedical and biotechnical fields including drug delivery, biosensor, and cell culture.05-09-2013
20130146441Method for producing a gas mixture of Hydrogen Ions and Hydroxide Ions - A method for producing a gas mixture of hydrogen ions and hydroxide ions in which the hydrogen ions and the hydroxide ions are maintained an ionic state and exist independently. The method comprises a pre-processing step, a splitting step, and a positive charging step.06-13-2013
20120273342COMPACT ION ACCELERATOR SOURCE - An ion source includes a conductive substrate, the substrate including a plurality of conductive nanostructures with free-standing tips formed on the substrate. A conductive catalytic coating is formed on the nanostructures and substrate for dissociation of a molecular species into an atomic species, the molecular species being brought in contact with the catalytic coating. A target electrode placed apart from the substrate, the target electrode being biased relative to the substrate with a first bias voltage to ionize the atomic species in proximity to the free-standing tips and attract the ionized atomic species from the substrate in the direction of the target electrode.11-01-2012
20120273341METHODS AND APPARATUS FOR CONTROLLING PLASMA IN A PROCESS CHAMBER - Methods and apparatus for controlling a plasma are provided herein. In some embodiments, a method may include supplying a first RF signal having a first frequency and a first period from an RF power source to a first electrode, wherein the first period is a first integer number of first cycles at the first frequency; supplying a second RF signal having a second frequency and a second period from the RF power source to the first electrode, wherein the second period is a second integer number of second cycles at the second frequency and wherein a first multiplicative product of the first frequency and the first integer number is equal to a second multiplicative product of the second frequency and the second integer number; and controlling the phase between the first and second periods to control an ion energy distribution of the plasma formed in a process chamber.11-01-2012
20130153407METHOD OF PREPARING SANDWICH COMPOSITE COATING ON ENGINEERING PLASTIC SURFACE - A method of preparing a sandwich composite coating on an engineering plastic surface is provided to enhance the functions and quality of a plastic coated metal product, lowers the production cost, saves water (without requiring any water in the whole manufacturing process). The method includes the steps of dry cleaning and activating a plastic blank, placing the activated plastic blank into a PVD furnace, forming a metal basal film on the activated plastic blank, performing a plasma activation of the plastic blank with the metal basal film, sputtering an organic coating, and forming a metal coated film layer on the plastic blank placed into PVD furnace to produce a metalized engineering plastic product which is applicable for sanitary ware, electronics, electric appliances and in the automobile industry.06-20-2013
20120018295SYSTEM AND METHOD FOR PROCESSING MATERIAL TO GENERATE SYNGAS USING PLURALITY OF GAS REMOVAL LOCATIONS - The present invention is directed to system and method for processing material to generate syngas. A reactor chamber is implemented with a plurality of electrodes that can generate an arc within the chamber when electricity is applied to them. The arc can be used to create free radicals which along with the heat and light of the arc breakdown material comprising carbonaceous material, such as Municipal Solid Waste (MSW), into gas components that form syngas. The syngas can be extracted from the reactor chamber and be used for various commercial purposes. The reactor chamber may comprise a material feed system operable to move material from a material input opening in the reactor chamber towards the electrodes at a controlled rate. Further, the reactor chamber may comprise a water injection system within the reactor chamber operable to inject water into the reactor chamber while electricity is applied to the electrodes. Yet further, the reactor chamber may comprise a gas removal system within the reactor chamber operable to extract gas generated from breakdown of the material from a plurality of gas removal locations. The gas removal system may be integrated within the material feed system.01-26-2012
20120018294SYSTEM AND METHOD FOR PROCESSING MATERIAL TO GENERATE SYNGAS USING WATER INJECTION - The present invention is directed to system and method for processing material to generate syngas. A reactor chamber is implemented with a plurality of electrodes that can generate an arc within the chamber when electricity is applied to them. The arc can be used to create free radicals which along with the heat and light of the arc breakdown material comprising carbonaceous material, such as Municipal Solid Waste (MSW), into gas components that form syngas. The syngas can be extracted from the reactor chamber and be used for various commercial purposes. The reactor chamber may comprise a material feed system operable to move material from a material input opening in the reactor chamber towards the electrodes at a controlled rate. Further, the reactor chamber may comprise a water injection system within the reactor chamber operable to inject water into the reactor chamber while electricity is applied to the electrodes. Yet further, the reactor chamber may comprise a gas removal system within the reactor chamber operable to extract gas generated from breakdown of the material from a plurality of gas removal locations. The gas removal system may be integrated within the material feed system.01-26-2012
20130192979APPARATUS FOR PLASMATIZING SOLID-FUEL COMBUSTION ADDITIVE AND METHOD FOR USING THE SAME - An apparatus for plasmatizing solid-fuel combustion additive and the method for using the same are provided. The apparatus is made from a reaction vessel, electrodes, a power supply, a carrier gas intake device, a feed device and an outlet of the plasmatization reaction vessel. The method to use this apparatus is as following: The additive is added into the reaction vessel through the feed device in which the carrier gas passes and carries the additive into the electrode region for evaporation and (partially) plasmatization; and the plasmatized gas from the outlet of the reactor is introduced into any combustion chamber. The additive is an organometallic compound or a mixture of the organometallic compounds, or their derivative, eutectic compound or coordination agent containing at least one organometallic compound. The present invention provides a method for plasmatizing combustion additive, then the plasmatized combustion additive is added into the combustion system to participate the combustion reaction between fuel and oxygen, in turn, to improve the utilization efficiency of the additive, reduce the amount of the additive used, improve the combustion efficiency and quality of the flue gas, then to save the fuel and reduce the emission of the gaseous contaminates.08-01-2013

Patent applications in class Electrostatic field or electrical discharge

Patent applications in all subclasses Electrostatic field or electrical discharge