| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 156345510 | With workpiece support | 80 |
| 20130025790 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - Provided are a plasma processing apparatus and a plasma processing method, by which plasma damage is reduced during processing. At the time of performing desired plasma processing to a substrate ( | 01-31-2013 |
| 20090120584 | COUNTER-BALANCED SUBSTRATE SUPPORT - A semiconductor processing system is described. The system includes a processing chamber having an interior capable of holding an internal chamber pressure below ambient atmospheric pressure. The system also includes a pumping system coupled to the chamber and adapted to remove material from the processing chamber. The system further includes a substrate support pedestal, where the substrate support pedestal is rigidly coupled to a substrate support shaft extending through a wall of the processing chamber. A bracket located outside the processing chamber is provided which is rigidly and sometimes rotatably coupled to the substrate support shaft. A motor coupled to the bracket can be actuated to vertically translate the substrate support pedestal, shaft and bracket from a first position to a second position closer to a processing plate. A piston mounted on an end of the bracket provides a counter-balancing force to a tilting force, where the tilting force is generated by a change in the internal chamber pressure and causes a deflection in the position of the bracket and the substrate support. The counter-balancing force reduces the deflection of the bracket and the substrate support. | 05-14-2009 |
| 20120216955 | PLASMA PROCESSING APPARATUS - According to one embodiment, a plasma processing apparatus that includes a process target holding portion and a plasma generating unit in a chamber, and processes a process target by using generated plasma is provided. An yttrium oxide film is formed on an inner wall of the chamber and a surface of a structural member in the chamber on a generation region side of the plasma. The yttrium oxide film includes yttrium oxide particles, has a film thickness of 10 μm or more and 200 μm or less, has a film density of 90% or more, and is such that yttrium oxide particles, which are present in a unit area 20 μm×20 μm and whose grain boundary is confirmable, are 0 to 80% in area ratio. | 08-30-2012 |
| 20090044911 | VACUUM PROCESSOR - A vacuum processor includes: a chamber; a pump which keeps the inside of the chamber in a vacuum state by; a connection part which connects the chamber with the pump and is formed with a gas passage therein. An inner wall of the connection part is provided with a capturing part capturing particles in the passage. The capturing part has a fibrous substance facing the passage and disposed along the passage. The fibrous substance is provided to capture particles. A peripheral part of the woven cloth of the fibrous substance is folded to a back side of the unwoven cloth and the front end of the peripheral part of the woven cloth is interfolded to the back side of the unwoven cloth. | 02-19-2009 |
| 20110297321 | SUBSTRATE SUPPORT STAGE OF PLASMA PROCESSING APPARATUS - An object is to provide a substrate support stage of a plasma processing apparatus, in which electrical discharge from a connection terminal is prevented with a simple structure. In the substrate support stage of a plasma processing apparatus, an electrostatic attraction plate ( | 12-08-2011 |
| 20080236755 | Single-wafer type substrate processing apparatus having a carry-in port provided with first and second placement tables arranged in a line - A single-wafer type substrate processing apparatus includes: a plurality of process modules connected to a substrate transfer chamber; a carry-in port having a plurality of first placement tables arranged in a horizontal direction so that a substrate carrier is placed thereon; a second placement table installed on the left or right of an area where the first placement tables are arranged in the horizontal direction so that the substrate carrier is temporarily placed thereon; and a transfer mechanism transferring the substrate carrier from the second placement table to one of the first placement tables. When viewed in a direction perpendicular to the horizontal direction, an outer end of the second placement table in the horizontal direction is inside one of a maintenance area and a footprint area of the plurality of single-wafer type process modules as a whole, which one area is larger than the other in the horizontal direction. | 10-02-2008 |
| 20090294066 | Dry Etching Apparatus - A plasma etching and/or cleaning apparatus is disclosed. The apparatus includes a pedestal for mounting a wafer thereon, a quartz insulator having the pedestal therein, a ceramic top cover covering a portion of the quartz insulator that is exposed to plasma, and a lower pedestal supporting the quartz insulator. By simply covering the quartz insulator with a ceramic cover, a decrease in particles may be observed, and the lifetime of the quartz pedestal is increased. Therefore, maintenance and repair costs of the apparatus can be reduced, thereby enhancing operation efficiency. Furthermore, since the production of particles can be reduced, a more uniform etch rate can be obtained when etching the wafer, thereby enhancing the yield of the semiconductor device. In a further embodiment, the ceramic cover has an upper surface free of holes adapted to contain an alignment pin. | 12-03-2009 |
| 20080295966 | Electrode Assembly For The Removal Of Surface Oxides By Electron Attachment - An apparatus and a method comprising same for removing metal oxides from a substrate surface are disclosed herein. In one particular embodiment, the apparatus comprises an electrode assembly that has a housing that is at least partially comprised of an insulating material and having an internal volume and at least one fluid inlet that is in fluid communication with the internal volume; a conductive base connected to the housing comprising a plurality of conductive tips that extend therefrom into a target area and a plurality of perforations that extend therethrough and are in fluid communication with the internal volume to allow for a passage of a gas mixture comprising a reducing gas. | 12-04-2008 |
| 20090165956 | ELECTROSTATIC CHUCK AND APPARATUS FOR TREATING SUBSTRATE INCLUDING THE SAME - An electrostatic chuck for an apparatus for treating a substrate includes a body; an insulating plate attached onto a top surface of the body, wherein the substrate is disposed on the insulating plate; an electrode in the insulating plate; a temperature controlling unit including a heating unit and a cooling unit under the electrode and in the insulating plate; and a thermal conduction unit disposed between the electrode and the temperature controlling unit. | 07-02-2009 |
| 20080210379 | SUBSTRATE PROCESSING APPARATUS AND FOCUS RING - A substrate processing apparatus that can reliably improve the efficiency of heat transfer between a focus ring and a mounting stage. A housing chamber with the interior thereof evacuated houses a substrate. The substrate is mounted on a mounting stage that is disposed in the housing chamber. An annular focus ring is mounted on the mounting stage such as to surround a peripheral portion of the mounted substrate. A heat transfer film is formed on a surface of the focus ring which contacts the mounting stage by printing processing. | 09-04-2008 |
| 20100126669 | VACUUM TREATMENT APPARATUS - Provided is a vacuum treatment device capable of uniformly treating the whole of a substrate in a vacuum container. In the vacuum treatment device in which the substrate is placed and held in the recess of a substrate holder, the difference between the heights of the surface of the substrate holder and the surface of the substrate to be treated is set to be equal to or shorter than 0.2 mm, and the distance between the side surface of the substrate and the inner surface of the recess of the substrate holder is set to be equal to or shorter than 5 mm. | 05-27-2010 |
| 20080295965 | PLASMA PROCESSING APPARATUS - An inner medium passage | 12-04-2008 |
| 20110203736 | SURFACE ACTIVATION DEVICE - A surface activation device comprises a holding compartment, a nozzle support, and a sealing assembly. The holding compartment defines a receiving chamber and defining a plurality of recesses for holding workpieces therein. The nozzle support is rotatably received in the receiving chamber and comprises an outer barrel, an inner barrel is received in the outer barrel, and at least one ultraviolet (UV) lamp is embedded in the outer barrel. The outer barrel and the inner barrel cooperatively define a first chamber therebetween, and the inner barrel defines a second chamber therein. The sealing assembly seals the first chamber and the second chamber, and comprises at least one first inlet tube communicated with the first chamber and at least one second inlet tube communicated with the second chamber. | 08-25-2011 |
| 20090183835 | ETCHING PROCESS APPARATUS AND MEMBER FOR ETCHING PROCESS CHAMBER - It is an object of the present invention to provide an etching process apparatus which can suppress evolution of foreign matter to improve production yield. | 07-23-2009 |
| 20090050272 | DEPOSITION RING AND COVER RING TO EXTEND PROCESS COMPONENTS LIFE AND PERFORMANCE FOR PROCESS CHAMBERS - A deposing ring and cover ring for extending process components life and performance for process chambers are disclosed. A deposition ring including a protruding surface is positioned in spaced apart relation with a cover ring including a depressed surface. Indicated surfaces of the deposition ring and cover ring may be covered with a coating to improve adhesion of deposited materials. | 02-26-2009 |
| 20090199968 | Method and Apparatus for Electronic Device Manufacture Using Shadow Masks - Electronic devices are formed on a substrate that is advanced stepwise through a plurality of deposition vessels. Each deposition vessel includes a source of deposition material and has at least two shadow masks associated therewith. Each of the two masks is alternately positioned within the corresponding deposition vessel for patterning the deposition material onto the substrate through apertures in the mask positioned therein, and positioned in an adjacent cleaning vessel for mask cleaning. The patterning onto the substrate and the cleaning of at least one of the masks are performed concurrently. | 08-13-2009 |
| 20090101284 | Table for plasma processing apparatus and plasma processing apparatus - An object of the present invention is to suppress damage of an electrostatic chuck, by controlling stress exerted on each part of a table, which includes an electrically conductive material, i.e., an electrode for generating plasma, a dielectric layer for enhancing the in-plane uniformity of a plasma process, and an electrostatic chuck. The table for a plasma processing apparatus includes an electrically conductive member connected with a high frequency power source and adapted for plasma generation, for drawing ions present in the plasma, or for both thereof; a dielectric layer provided on a top face of the electrically conductive member, having a central portion and a peripheral portion that are different in thickness relative to each other, and adapted for providing uniformity of high frequency electric field intensity in a plane over the substrate to be processed; and an electrode film for an electrostatic chuck, provided in the dielectric layer and adapted for electrostatically chucking the substrate onto a top face of the dielectric layer. With such configuration, the stress exerted on the electrostatic chuck due to temperature change can be controlled. | 04-23-2009 |
| 20090229759 | ANNULAR ASSEMBLY FOR PLASMA PROCESSING, PLASMA PROCESSING APPARATUS, AND OUTER ANNULAR MEMBER - An annular assembly for plasma processing which can prevent poor attraction of a substrate. The annular assembly is comprised of a focus ring that is mounted on a mounting stage and disposed such as to surround an outer periphery of a substrate subjected to the plasma processing, and an outer annular member that is disposed such as to surround an outer periphery of the focus ring. The outer annular member has an exposed surface that is exposed into a processing space in which plasma is produced, and the exposed surface is covered with yttria. | 09-17-2009 |
| 20120103526 | HIGH PURITY ALUMINUM COATING HARD ANODIZATION - The disclosure relates to a chamber component or a method for fabricating a chamber component for use in a plasma processing chamber apparatus. The chamber component includes a polished high purity aluminum coating and a hard anodized coating that is resistive to the plasma processing environment. | 05-03-2012 |
| 20100193131 | ASHING DEVICE - An ashing device that prevents the ashing rate from changing over time. The ashing device ashes organic material on a substrate including an exposed metal in a processing chamber. The ashing device includes a path, which is formed in the processing chamber and through which active species supplied to the processing chamber pass. The path is defined by a surface on which the metal scattered from the substrate by the active species is collectible, with the surface being formed so as to expose a metal that is of the same kind. | 08-05-2010 |
| 20100212834 | Plasma processing apparatus - A plasma processing apparatus for processing a subject placed on a subject stage disposed in a processing chamber in a vacuum vessel, by using plasma formed in said processing chamber, includes: an exhaust space communicating with the processing chamber, extending in a horizontal direction, and exhausting gas in the processing chamber; an exhaust port communicating with the exhaust space, the gas being exhausted via the exhaust port; a pump disposed communicating with the exhaust port and exhausting the gas; and a plate member disposed in the exhaust space between a connection portion to the processing chamber and the exhaust port, extending along a direction connecting the connection portion and the exhaust port, and disposed outside a view angle from an upper surface of the subject stage. | 08-26-2010 |
| 20110232847 | QUARTZ GLASS MEMBER FOR PLASMA ETCHING - Provided is a doped quartz glass member for plasma etching, which is used in a plasma etching process and is free from any problematic fluoride accumulation during use. The quartz glass member for plasma etching is used as a jig for semiconductor production in a plasma etching process, and includes at least two or more kinds of metal elements in a total amount of 0.01 wt % or more to less than 0.1 wt %, in which the metal elements are formed of at least one kind of a first metal element selected from metal elements belonging to Group 3B of the periodic table and at least one kind of a second metal element selected from the group consisting of Mg, Ca, Sr, Ba, Sc, Y, Ti, Zr, Hf, lanthanoids, and actinoids. | 09-29-2011 |
| 20080289766 | Hot edge ring apparatus and method for increased etch rate uniformity and reduced polymer buildup - An apparatus with an edge ring configured to surround a perimeter of a semiconductor wafer in a semiconductor process, the edge ring having a plurality of protrusions located on an upper surface of the edge ring, the protrusions capable of preventing the semiconductor wafer from moving outside the bounds of a process plane. There is also an apparatus having a semiconductor process chamber and an electrostatic chuck, a semiconductor wafer, and an edge ring. There is also a method including providing a semiconductor process chamber, semiconductor wafer disposed within the semiconductor process chamber, and an edge ring, the edge ring having a plurality of protrusions located on an upper surface of the edge ring, the protrusions capable of preventing the semiconductor wafer from moving outside the bounds of a process plane. The method also includes performing an etch process on the semiconductor wafer. | 11-27-2008 |
| 20080230181 | PLASMA PROCESSING APPARATUS AND STRUCTURE THEREIN - A structure, for use in a processing chamber of a plasma processing apparatus in which a plasma process is performed on a target substrate, includes a base member at least having a first surface and a second surface; and a thermally sprayed insulating film covering the first surface. Further, the structure includes an insulating protection member covering the second surface and made of a material having a linear expansion coefficient different from that of the base member; and a buffing surface covered with an insulating layer interposed between the thermally sprayed insulating film and the insulating protection member to prevent a contact therebetween. The thermally sprayed insulating film, the insulating protection member and the insulating layer constitute an insulating surface covering the first surface and the second surface. | 09-25-2008 |
| 20080230180 | Processing Equipment for Object to be Processed - Processing equipment for an object to be processed is provided with a process container, the internal of which can be evacuated, a gas introducing means for introducing a prescribed gas into the process container, a supporting table provided in the process container, a ring-shaped supporting part provided on the supporting table for supporting the object to be processed, a plurality of thermoelectric conversion elements provided on an upper plane of the supporting table on an inner side of the supporting part, an element storing space evacuating means for evacuating inside the element storing space formed by a lower plane of the object to be treated, which is supported by the supporting part, an upper plane of the supporting table and the supporting part. | 09-25-2008 |
| 20100300623 | PLASMA ETCHING APPARATUS - According to one embodiment, a plasma etching apparatus includes an electrode to which a high-frequency voltage is applied, having an upper surface along which a processing target substrate is to be placed, and having an inclined side, and an electrode cover provided along the side of the electrode. | 12-02-2010 |
| 20100193132 | MULTI-WORKPIECE PROCESSING CHAMBER AND WORKPIECE PROCESSING SYSTEM INCLUDING THE SAME - A multi-workpiece processing chamber according to the present invention comprises a chamber housing which forms at least two internal processing spaces therein; at least one partition member which is provided in the chamber housing and partitions the chamber housing into at least two internal processing spaces; and the respective internal processing spaces being coupled with the partition member and having a symmetric shape to generate a processing reaction uniformly. The multi-workpiece processing chamber according to the present invention has internal processing spaces that have a symmetric shape by being coupled with a partition member. Thus, a processing reaction uniformly occurs across the internal processing areas and reproducibility and uniformity of a workpiece processing process may improve. | 08-05-2010 |
| 20110126984 | EDGE RING ASSEMBLY FOR PLASMA ETCHING CHAMBERS - An edge ring assembly used in a plasma etching chamber includes a dielectric coupling ring and a conductive edge ring. In one embodiment, the dielectric coupling ring has an annular projection extending axially upward from its inner periphery. The dielectric coupling ring is adapted to surround a substrate support in a plasma etching chamber. The conductive edge ring is adapted to surround the annular projection of the dielectric coupling ring. A substrate supported on the substrate support overhangs the substrate support and overlies the annular projection of the dielectric coupling ring and a portion of the conductive edge ring. In another embodiment, the dielectric coupling ring has a rectangular cross section. The dielectric coupling ring and the conductive edge ring are adapted to surround a substrate support in a plasma etching chamber. A substrate supported on the substrate support overhangs the substrate support and overlies a portion of the conductive edge ring. | 06-02-2011 |
| 20110024048 | PLASMA PROCESSING APPARATUS - In a plasma oxidation processing apparatus ( | 02-03-2011 |
| 20100065216 | RING ASSEMBLY FOR SUBSTRATE PROCESSING CHAMBER - An isolator ring is provided for a substrate support used in a substrate processing chamber. The substrate support comprises an annular ledge having a circumferential edge, and an inner perimeter sidewall. The isolator ring comprises an L-shaped dielectric ring comprising a laser textured surface; a horizontal leg capable of resting on the annular ledge of the support, and having a length that extends radially outward and stops short of the circumferential edge of the annular ledge; and a vertical leg abutting the inner perimeter sidewall of the support. A ring assembly includes the isolator ring and a deposition ring. | 03-18-2010 |
| 20110024047 | SUBSTRATE SUPPORT HAVING FLUID CHANNEL - A support for a substrate processing chamber comprises a chuck having a substrate receiving surface, and a base comprising an upper wall comprising a recessed trench having (i) an attachment face at a first depth, and (ii) a fluid channel at a second depth. A lower wall is seated in the recessed trench and attached to the attachment face of the upper wall, to close the fluid channel. A fluid inlet is provided to supply a heat transfer fluid to the fluid channel and a fluid outlet provided to discharge the heat transfer fluid from the fluid channel. | 02-03-2011 |
| 20100032095 | SUBSTRATE PROCESSING APPARATUS - The processing device includes a processing chamber which receives the substrate, a depressurization mechanism which depressurizes the interior of the processing chamber, a stage which holds the substrate and is arranged in the processing chamber, a linear movement mechanism which linearly moves the stage and is arranged in the processing chamber, and a parallel link mechanism which prevents the rotation of the stage and is arranged in the processing chamber. A space portion isolated from the internal atmosphere of the processing chamber is formed in the stage. An air communication path that allows the space portion to communicate with the external atmosphere of the processing chamber is formed in the parallel link mechanism. | 02-11-2010 |
| 20090000744 | EDGE RING ARRANGEMENTS FOR SUBSTRATE PROCESSING - A method for processing a substrate in a plasma processing chamber is provided. The substrate is disposed above a chuck and surrounded by a first edge ring. The first edge ring is electrically isolated from the chuck. The method includes providing a second edge ring. The second edge ring is disposed below an edge of the substrate. The method also includes providing a coupling ring. The coupling ring is configured to facilitate RF coupling from an ESC (electrostatic chuck) assembly to the first edge ring, thereby causing the first edge ring to have an edge ring potential during substrate processing and causing the RF coupling to be maximized at the first edge ring and minimized at the second edge ring during the substrate processing. | 01-01-2009 |
| 20080223524 | Semiconductor producing device and semiconductor device producing method - A tubular electrode ( | 09-18-2008 |
| 20090308538 | SUBSTRATE TEMPERATURE REGULATION FIXED APPARATUS - A substrate temperature regulation fixed apparatus has a base substance on which a vacuumed object is placed, an adhesive layer and a base plate. The base substance is fixed on the base plate through the adhesive layer. The adhesive layer contains a substance having plasma resistance. | 12-17-2009 |
| 20100059181 | LOW SLOPED EDGE RING FOR PLASMA PROCESSING CHAMBER - Embodiments of a cover ring for use in a plasma processing chamber are provided. In one embodiment, a cover ring for use in a plasma processing chamber includes a ring-shaped body fabricated from a yttrium (Y) containing material. The body includes a bottom surface having an inner locating ring and an outer locating ring. The inner locating ring extends further from the body than the outer locating ring. The body includes an inner diameter wall having a main wall and a secondary wall separated by a substantially horizontal land. The body also includes a top surface having an outer sloped top surface meeting an inner sloped surface at an apex. The inner sloped surface defines an angle with a line perpendicular to a centerline of the body less than about 70 degrees. | 03-11-2010 |
| 20120037316 | METHOD OF SUPPLYING ETCHING GAS AND ETCHING APPARATUS - A method of supplying an etching gas includes: supplying a first etching gas used in an etching process into a processing container; and supplying a second etching gas used in the etching process into the processing container, in which, when the first etching gas and the second etching gas are switched therebetween, only a small amount of a gas, which is needed as an etching gas before the switching and is not needed as an etching gas after the switching, is continuously supplied into the processing container. | 02-16-2012 |
| 20090173446 | SUBSTRATE SUPPORT, SUBSTRATE PROCESSING APPARATUS INCLUDING SUBSTRATE SUPPORT, AND METHOD OF ALIGNING SUBSTRATE - The present invention relates to a substrate support that facilitates aligning a substrate and prevents the substrate from being damaged by arc discharge in processing a substrate using plasma, a substrate processing apparatus including the substrate support, and a method of aligning the substrate. A substrate support, which includes a main body on which a substrate is placed and a subsidiary body disposed around the side of the main body and having a slope declining from a position above the main body to the upper side of the main body, is provided, such that it is easy to align the substrate and it is possible to damage due to arc discharge in processing the substrate using plasma. | 07-09-2009 |
| 20120006492 | PLASMA PROCESSOR AND PLASMA PROCESSING METHOD - An etching chamber | 01-12-2012 |
| 20120006491 | PLASMA TEXTURING APPARATUS FOR SOLAR CELL - A plasma texturing apparatus for a solar cell includes a susceptor having engagement projections to prevent a wafer mounted therein from slipping outward or fluctuating back and forth when aligning the wafer over a cathode for plasma texturing; a focus ring functioning to confine plasma when conducting a plasma texturing process; and a clamp placed on an inner surface of the focus ring in such a way as to have a downward slope, and having one end which is coupled to the focus ring and the other end which faces away from the one end, is formed to be pointed and functions to squeeze and support peripheral portions of the wafer. | 01-12-2012 |
| 20120211166 | ION SOURCES AND METHODS FOR GENERATING AN ION BEAM WITH CONTROLLABLE ION CURRENT DENSITY DISTRIBUTION - Ion sources and methods for generating an ion bean with a controllable ion current density distribution. The ion source includes a discharge chamber having an optical grid position proximate at a first end and a re-entrant vessel positioned proximate a second end that opposes the first end. A plasma shaper extends from the re-entrant vessel and into the plasma discharge chamber. A position of the plasma shaper is adjustable relative to the grid-based ion optic such that the plasma shaper may operably change a plasma density distribution within the discharge chamber. | 08-23-2012 |
| 20100206484 | TRAY, TRAY SUPPORT MEMBER, AND VACUUM PROCESSING APPARATUS - A chuck capable of holding a tray capable of holding a substrate in a predetermined position in a vacuum vessel includes a vertically movable frame, and an arm extending from the frame toward the tray and capable of supporting the tray. The arm includes a support portion which abuts against the tray, and a counterbore portion formed on that side of the support portion which faces the frame. This structure can reduce the warpage of the tray. | 08-19-2010 |
| 20110277934 | METHODS OF SELECTIVELY DEPOSITING AN EPITAXIAL LAYER - Apparatus for selectively depositing an epitaxial layer are provided herein. In some embodiments, an apparatus for processing a substrate may include a process chamber having a substrate support disposed therein; a deposition gas source coupled to the process chamber; an etching gas source coupled to the process chamber, the etching gas source including a hydrogen and halogen gas source and a germanium gas source; an energy control source to maintain the substrate at a temperature at up to 600 degrees Celsius; and an exhaust system coupled to the process chamber to control the pressure in the process chamber. | 11-17-2011 |
| 20130008608 | PLASMA PROCESSING APPARATUS - The plasma processing apparatus includes a processing container, a gas supplying unit, an introducing unit, a holding member, and a focus ring. In a processing space defined by the processing container, plasma of a processing gas supplied from the gas supplying unit is generated by energy introduced from the introducing unit. The holding member for holding an object to be processed and a focus ring formed to surround a cross-section of the holding member are disposed in the processing space. A gap equal to or less than 350 μm is defined between the cross-section of the holding member and the focus ring. | 01-10-2013 |
| 20130008609 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a processing chamber, a first electrode and a second electrode disposed to face each other, a high frequency power supply unit for applying a high frequency power to either the first electrode or the second electrode, a processing gas supply unit for supplying a processing gas to a processing space, and a main dielectric member provided at a substrate mounting portion on a main surface of the first electrode. A focus ring is attached to the first electrode to cover a peripheral portion of the main surface of the first electrode and a peripheral dielectric member is provided in a peripheral portion on the main surface of the first electrode so that an electrostatic capacitance per unit area applied between the first electrode and the focus ring is smaller than that applied between the first electrode and the substrate by the main dielectric member. | 01-10-2013 |
| 156345520 | With means to heat the workpiece support | 12 |
| 20090194238 | PLASMA PROCESSING APPARATUS - Provided is a plasma processing apparatus capable of easily processing a top surface of a mounting table to have a smooth shape, and also capable of preventing a temperature of a peripheral portion of a substrate from decreasing. A plasma processing apparatus | 08-06-2009 |
| 20100163188 | MOUNTING TABLE STRUCTURE AND PROCESSING APPARATUS - A mounting table structure | 07-01-2010 |
| 20090095425 | APPARATUS FOR THE FORMATION OF A METAL FILM - An apparatus for forming a metal film, including a reaction vessel for housing a substrate, a precursor feeding device for bubbling a carrier gas through a liquid organometallic complex, vaporizing the organometallic complex, producing a precursor from the vaporized organometallic complex, and feeding the precursor into the reaction vessel, a rotating magnetic field generator for creating a rotating magnetic field in a space above the substrate, and a second plasma generator for generating a plasma from a reducing gas fed into the reaction vessel. | 04-16-2009 |
| 20100032096 | Apparatus for Holding Semiconductor Wafers - Apparatus for holding semiconductor wafers during semiconductor manufacturing processes are disclosed. In one embodiment, the apparatus comprises a heat-conductive layer disposed on a supporting base. The apparatus also comprises a plurality of holes formed through the heat-conductive layer and the supporting base. The apparatus further comprises a plurality of heat-conductive lift pins that extend through the holes over the heat-conductive layer at the top end, and make a direct contact with a wafer substrate. The heat-conductive layer and the lift pins are connected to a heating circuit. | 02-11-2010 |
| 20080308230 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus | 12-18-2008 |
| 20100122774 | SUBSTRATE MOUNTING TABLE AND SUBSTRATE PROCESSING APPARATUS HAVING SAME - A substrate mounting table includes a mounting table main body, a mounting unit provided at an upper portion of the mounting table main body, a heat source transferring a (cold) heat to the upper portion of the mounting table main body, and a heat transfer control part. The heat transfer control part includes a cavity portion provided in the mounting table main body to correspond to the mounted substrate, and a solid member filled in the cavity portion and having pores communicating with one another. The heat transfer control part controls a heat transfer level from the heat source by supplying or exhausting a heat transfer gas to or from the cavity portion. A controller controls the supplying and the exhausting of the heat transfer gas to and from the cavity portion by a heat transfer gas supply unit and a heat transfer gas exhaust unit, respectively. | 05-20-2010 |
| 20110005686 | LOADING TABLE STRUCTURE AND PROCESSING DEVICE - A loading table structure which is adapted, in order to prevent damage to the loading table, so that large thermal stress does not occur in the loading table and so that the amount of supply of a purge gas for corrosion prevention to the loading table is minimized. The loading table structure is formed in a processing container capable of discharging gas contained therein and is used to load thereon an object to be processed. The loading table structure is provided with a loading table on which the object to be processed is loaded and which consists of a dielectric, a heating means which is provided to the loading table and which heats the object to be processed loaded on the loading table, and protective strut tubes which are mounted so as to vertically rise from the bottom section of the processing container, which have upper ends joined to the lower surface of the loading table to support the loading table, and which consist of a dielectric. A functional bar extending up to the loading table is inserted into each protective strut tube. | 01-13-2011 |
| 20090277588 | Semiconductor producing device and semiconductor device producing method - A tubular electrode ( | 11-12-2009 |
| 20100059182 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus includes a chamber having a reaction space therein, a substrate seating member disposed in the reaction space of the chamber to seat a substrate thereon, an induction heating unit to heat the substrate seating member, and at least one altitude adjusting unit to selectively adjust the altitude of the induction heating unit at the outside of the chamber according to a temperature adjusting region of the substrate seating member. Therefore, it is possible to constantly control a temperature of the substrate seating member by adjusting the distance length between the substrate seating member and the induction heating unit at the outside of the chamber. | 03-11-2010 |
| 20120000610 | Microwave Plasma Processing Apparatus - In accordance with example embodiments, a plasma processing apparatus includes a chamber configured to perform a plasma process, an upper plate on the chamber, an antenna under the upper plate and the antenna is configured to generate plasma in the chamber, an upper insulator between the upper plate and the antenna and the upper insulator covers a top of the antenna, a lower insulator covering a bottom of the antenna, an antenna support ring configured to fix the antenna to the upper plate, and a metal gasket adhered to the antenna support ring. | 01-05-2012 |
| 20120006493 | HEATING AND COOLING OF SUBSTRATE SUPPORT - A process chamber and a method for controlling the temperature of a substrate positioned on a substrate support assembly within the process chamber are provided. The substrate support assembly includes a thermally conductive body, a substrate support surface on the surface of the thermally conductive body and adapted to support a large area substrate thereon, one or more heating elements embedded within the thermally conductive body, and two or more cooling channels embedded within the thermally conductive body to be coplanar with the one or more heating elements. The cooling channels may be branched into two or more equal-length cooling passages being extended from a single point inlet and into a single point outlet to provide equal resistance cooling. | 01-12-2012 |
| 20120160419 | SUBSTRATE-SUPPORTING UNIT AND SUBSTRATE-PROCESSING APPARATUS COMPRISING SAME - A substrate-supporting unit includes: a mounting board on which a substrate is disposed; and a heater installed in the mounting board to heat the substrate disposed on the mounting board, wherein the mounting board includes: a non-contact surface which faces a center portion of the substrate and is spaced apart from the center portion of the substrate; and a contact member which extends outward from the non-contact surface and is arranged along an edge portion of the substrate disposed on the mounting board to support the edge portion of the substrate. | 06-28-2012 |
| 156345530 | With means to cool the workpiece support | 6 |
| 20130048217 | ELECTROSTATIC CHUCK AND SEMICONDUCTOR/LIQUID CRYSTAL MANUFACTURING EQUIPMENT - An electrostatic chuck includes, a chuck function portion including a plurality of chuck regions on which an attractable object is placed respectively, and a concave surface portion provided in an outer region of the chuck regions, and electrodes arranged in an inner part of the chuck function portion corresponding to the chuck regions and an inner part of the chuck function portion corresponding to the concave surface portion, respectively. | 02-28-2013 |
| 20120222818 | SUBSTRATE SUPPORTING TABLE, SUBSTRATE PROCESSING APPARATUS, AND MANUFACTURE METHOD FOR SEMICONDUCTOR DEVICE - The substrate supporting table includes a supporting plate that supports a substrate, a peripheral wall that encompasses a flow path of a coolant under the supporting plate and has an upper end enclosed by the supporting plate, a lower cover that encloses a bottom portion of the flow path and encloses a lower end of the peripheral wall. The substrate supporting table further includes a coolant supplying component that supplies a coolant through an upstream input of the flow path, a discharging component that discharges the coolant through a downstream output of the flow path, and a partition disposed between a supplying hole of the coolant supplying component and a discharging hole of the discharging component. A gap is formed between the partition and the bottom portion of the flow path. | 09-06-2012 |
| 20080289767 | PLASMA PROCESSING APPARATUS - The present invention provides a temperature control unit for an electrostatic adsorption electrode that is capable of controlling the wafer temperature rapidly over a wide temperature range without affecting in-plane uniformity while high heat input etching is conducted with high wafer bias power applied. A refrigerant flow path provided in the electrostatic adsorption electrode serves as an evaporator. The refrigerant flow path is connected to a compressor, a condenser, and a first expansion valve to form a direct expansion type refrigeration cycle. A second expansion valve is installed between the electrostatic adsorption electrode and the compressor to adjust the flow rate of a refrigerant. This makes it possible to compress the refrigerant in the refrigerant flow path of the electrostatic adsorption electrode and adjust the wafer temperature to a high level by raising the refrigerant evaporation temperature. Further, a thin-walled cylindrical refrigerant flow path is employed so that the thin-walled cylinder is deformed only slightly by the refrigerant pressure. | 11-27-2008 |
| 20110024049 | LIGHT-UP PREVENTION IN ELECTROSTATIC CHUCKS - An electrostatic chuck assembly is provided comprising a ceramic contact layer, a patterned bonding layer, an electrically conductive base plate, and a subterranean arc mitigation layer. The ceramic contact layer and the electrically conductive base plate cooperate to define a plurality of hybrid gas distribution channels formed in a subterranean portion of the electrostatic chuck assembly. Individual ones of the hybrid gas distribution channels comprise surfaces of relatively high electrical conductivity presented by the electrically conductive base plate and relatively low electrical conductivity presented by the ceramic contact layer. The subterranean arc mitigation layer comprises a layer of relatively low electrical conductivity and is formed over the relatively high conductivity surfaces of the hybrid gas distribution channels in the subterranean portion of the electrostatic chuck assembly. Semiconductor wafer processing chambers are also provided. | 02-03-2011 |
| 20120043024 | SUBSTRATE PROCESSING APPARATUS AND TEMPERATURE ADJUSTMENT METHOD - There is provided a substrate processing apparatus including: a chamber in which plasma processing is performed on a substrate; a susceptor which is disposed in the chamber and on which the substrate is held; a shower head which is provided to face the susceptor with a processing space therebetween; a high frequency power source which generates plasma by applying high frequency power to the processing space; water spray devices which form a surface wet with water on a rear surface of a surface of the susceptor as a temperature adjustment surface; an evaporation chamber which isolates the wet surface from an atmosphere around the wet surface; and a pressure adjustment device which adjusts a pressure in the evaporation chamber, wherein the pressure in the evaporation chamber is adjusted by using the pressure adjustment device such that the water which forms the wet surface is evaporated, thereby controlling a temperature of the surface of the susceptor by using latent heat of evaporation of the water. | 02-23-2012 |
| 20100326602 | ELECTROSTATIC CHUCK - An isolator for heat transfer gas conduits of an electrostatic chuck is described. The isolator includes a sleeve and a body positioned in the sleeve to form an annulus between the body and sleeve that allows for flow of the heat transfer gas. The body is positioned against the puck of the chuck, and may be supported in this position by a spring. A silicon seal may be provided between the sleeve and the puck to prevent plasma from forming in the conduits. | 12-30-2010 |
| 156345540 | With means to move the workpiece inside the etching chamber | 17 |
| 20090056878 | TRANSFER APPARATUS - A transfer apparatus includes a first magnetic member placed in a carrier, and a second magnetic member placed in a carrier supporting unit to oppose the first magnetic member from a position below the first magnetic member in the vertical direction, and having the same polarity as that of the first magnetic member. The repulsive force generated between the first and second magnetic members vertically pulls up the carrier, thereby reducing the weight of the carrier supported by the carrier supporting unit. | 03-05-2009 |
| 20120097332 | SUBSTRATE SUPPORT WITH SYMMETRICAL FEED STRUCTURE - Apparatus for processing a substrate is disclosed herein. In some embodiments, a substrate support may include a substrate support having a support surface for supporting a substrate the substrate support having a central axis; a first electrode disposed within the substrate support to provide RF power to a substrate when disposed on the support surface; an inner conductor coupled to the first electrode about a center of a surface of the first electrode opposing the support surface, wherein the inner conductor is tubular and extends from the first electrode parallel to and about the central axis in a direction away from the support surface of the substrate support; an outer conductor disposed about the inner conductor; and an outer dielectric layer disposed between the inner and outer conductors, the outer dielectric layer electrically isolating the outer conductor from the inner conductor. The outer conductor may be coupled to electrical ground. | 04-26-2012 |
| 20120024479 | APPARATUS FOR CONTROLLING THE FLOW OF A GAS IN A PROCESS CHAMBER - Apparatus for controlling the flow of a gas in a process chamber is provided herein. In some embodiments, an apparatus for controlling the flow of a gas in a process chamber having a processing volume within the process chamber disposed above a substrate support and a pumping volume within the process chamber disposed below the substrate support may include an annular plate surrounding the substrate support proximate a level of a substrate support surface of the substrate support, wherein the annular plate extends radially outward toward an inner peripheral surface of the process chamber to define a uniform gap between an outer edge of the annular plate and the inner peripheral surface, wherein the uniform gap provides a uniform flow path from the processing volume to the pumping volume. | 02-02-2012 |
| 20100243168 | DEVICE AND METHOD FOR SUPPORTING A SUBSTRATE - A substrate support device including a support member having a lower-surface support section to support a lower surface of a substrate; and a position restriction section provided on the lower-surface support section, the position restriction section being formed to surround a periphery of the substrate supported on the lower-surface support section and restrict a position of the substrate. At least one of the lower-surface support section and the position restriction section includes a base material and a protective film formed to cover the base material and prevent at least one of wear and chemical erosion to which the base material will be subject. The substrate support device further includes, for example, a base that supports the support member, and a driving structure that moves the support member in a relative fashion with respect to the base, and is constructed as a substrate transport device. | 09-30-2010 |
| 20080251208 | Plasma Treatment Apparatus - In a plasma treatment apparatus for performing plasma treatment by accommodating a substrate ( | 10-16-2008 |
| 20110162803 | CHAMBER WITH UNIFORM FLOW AND PLASMA DISTRIBUTION - Embodiments of the present invention provide a recursive liner system that facilitates providing more uniform flow of gases proximate the surface of a substrate disposed within an apparatus for processing a substrate (e.g., a process chamber). In some embodiments, a recursive liner system may include an outer liner having an outer portion configured to line the walls of a process chamber, a bottom portion extending inward from the outer portion, and a lip extending up from the bottom portion to define a well; and an inner liner having a lower portion configured to be at least partially disposed in the well to define, together with the outer liner, a recursive flow path therebetween. | 07-07-2011 |
| 20120305193 | PARALLEL SINGLE SUBSTRATE PROCESSING AGITATION MODULE - A system for fluid processing one or more substrate surfaces arrayed in a fluid. The system has a process module with a frame and a plurality of agitation members to fluid process the substrate surfaces without contacting the substrate surfaces. A substrate holder assembly has a holder frame and a number of substrate holders, each of which is coupled to the holder frame and configured to hold a substrate so that a different substrate is held by each substrate holder of the substrate holder assembly for transport therewith as a unit to and from the process module. The substrate holder assembly and each substrate holder of the substrate holder assembly are removably coupled to the process module frame and, when coupled to the process module frame, each substrate holder is independently moveable and positionable relative to the other substrate holders of the substrate holder assembly. | 12-06-2012 |
| 20120305194 | Etching Device, Plasma Processing Device - A plasma processing device capable of positioning a protective member for covering the upper surface of a peripheral edge portion of a substrate, with high accuracy. A plasma processing device has, a platen on which a substrate K is placed, a gas supply device, a plasma generating device, an RF power supply unit, an annular and plate-shaped protective member configured to be capable of being placed on a peripheral portion of the platen and which covers a peripheral edge portion of the substrate K, support members 35 supporting the protective member, and a lifting cylinder lifting up and down the platen. At least three first protrusions which are engaged with the peripheral portion of the platen are formed on a pitch circle on the lower surface of the protective member and the center of the pitch circle is co-axial with the central axis of the protective member. | 12-06-2012 |
| 20120305192 | PARALLEL SINGLE SUBSTRATE PROCESSING FLUID JET MODULE - A system for fluid processing one or more substrate surfaces arrayed in a fluid. The system has a process module with a frame and a plurality of fluid jet elements to inject a fluid at the substrate surfaces without contacting the substrate surfaces. A substrate holder assembly has a holder frame and a number of substrate holders, each of which is coupled to the holder frame and configured to hold a substrate so that a different substrate is held by each substrate holder of the substrate holder assembly for transport therewith as a unit to and from the process module. The substrate holder assembly and each substrate holder of the substrate holder assembly are removably coupled to the process module frame and, when coupled to the process module frame, each substrate holder is independently moveable and positionable relative to the other substrate holders of the substrate holder assembly. | 12-06-2012 |
| 20120111502 | STRUCTURE OF SUBSTRATE SUPPORTING TABLE, AND PLASMA PROCESSING APPARATUS - Disclosed is the structure of a substrate supporting table wherein corrosion of a bellows is eliminated, generation of dusts from the bellows is suppressed, and the volume and the weight of the sections to be driven are reduced. A plasma processing apparatus is also disclosed. In the substrate supporting table for the plasma processing apparatus ( | 05-10-2012 |
| 20120138230 | SYSTEMS AND METHODS FOR MOVING WEB ETCH, CVD, AND ION IMPLANT - Systems and methods for moving substrates through process chambers for photovoltaic (PV) or solar cell applications are disclosed. In particular, systems and methods for moving substrates through process chambers using a conveyor belt are disclosed. The conveyor belt can be used to move the substrates through etch chambers, chemical vapor deposition (CVD) chambers, and/or ion implant chambers, and the like. | 06-07-2012 |
| 156345550 | With means to cause rotary movement of the workpiece | 6 |
| 20100101730 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus, which is designed to prevent the wobbling of a rotational shaft rotating, is provided. The substrate includes a rotation shaft and a connecting member. A unit is disposed between the rotational shaft and the connecting member to make the rotational shaft and the connecting member close-contact each other or a unit is disposed under the rotational shaft to prevent the wobbling of the rotational shaft. | 04-29-2010 |
| 20090101285 | WAFER SPIN CHUCK AND AN ETCHER USING THE SAME - A wafer spin chuck and an etcher using the same are provided. According to an aspect of the present invention, there is provide a wafer spin chuck device comprising: a spin body which spins a wafer; and a stationary body which holds the spin body and is under the spin body with a space between the spin body and the stationary body, wherein the stationary body includes a blocking unit which blocks the space with a fluid. | 04-23-2009 |
| 20100032097 | SUBSTRATE TREATMENT APPARATUS - A substrate treatment apparatus includes: a treatment chamber provided therein with a chemical solution treatment area for treating a substrate with a chemical solution and a drying treatment area provided above the chemical solution treatment area for drying the substrate; a substrate holding member vertically movably provided in the treatment chamber for holding the substrate; and a lifting mechanism vertically moving the substrate in the range between the chemical solution treatment area and the drying treatment area. | 02-11-2010 |
| 20110126985 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus includes a vacuum container, a rotary table to rotate in the vacuum container, a substrate placement member mounted on the rotary table in a detachable manner, the substrate placement member and the rotary table together providing a recess in which a substrate is placed on an upper side of the rotary table, and the substrate placement member constituting a bottom surface in the recess on which the substrate is placed, a position regulating unit provided at least one of the rotary table and the substrate placement member to regulate a movement of the substrate caused by a centrifugal force during rotation of the rotary table, a reactant gas supply unit to supply reactant gas to the upper side of the rotary table, and a vacuum exhaust unit to exhaust the vacuum container. | 06-02-2011 |
| 20080216959 | PLASMA PROCESSING APPARATUS - The present invention provides a plasma processing apparatus which has the function of removing a deposit adhering to the periphery of the backside of a sample and has high throughput and low cost. That is, a deposit removal unit for removing the deposit on the periphery of the backside of the sample by pulsed laser irradiation is connected to an atmosphere-side transfer chamber of the plasma processing apparatus. | 09-11-2008 |
| 20130008610 | SURFACE TREATMENT APPARATUS - A surface treatment apparatus in which a disk-like sample-holding plate is provided inside an enclosure constituting a cylindrical circumferential wall. A cylindrical portion in an upper portion of the enclosure constitutes a material fluid supplying channel, and a channel provided on the lateral side of the sample-holding plate in the enclosure and shaped spreading as it goes farther from the cylindrical portion constitutes a fluid discharge channel. The fluid discharge channel employs a parabola curve or the like in which the position of the upper end of the outmost circumference of the sample-holding plate is defined as a focus position and the position of the upper end of the outlet that is symmetrically opposite to the focus position is defined as a reference position. | 01-10-2013 |
