Entries |
Document | Title | Date |
20080236754 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus, which generates a plasma by a radio frequency discharge in a processing chamber, includes a first member having a first front surface facing the plasma, and a first mating surface extending from the first front surface; and a second member having a second front surface that forms an angled portion together with the first front surface of the first member in a manner to face the plasma, and a second mating surface facing the first mating surface of the first member with a gap therebetween. In the angled portion, an opening portion of gap and an inner portion extending from the opening portion to at least an intermediate location of the gap are oriented along an extended straight line that bisects an angle between the first front surface of the first member and the second front surface of the second member. | 10-02-2008 |
20080251207 | MULTIPLE FREQUENCY PLASMA CHAMBER, SWITCHABLE RF SYSTEM, AND PROCESSES USING SAME - An RF power supplier is provided, that enables multiple-frequency RF power. The system uses N RF signal generators, combines the RF signals, amplify the combined signals, and then separates the amplified signal. The output of the system is then a multiple-frequency RF power. Optionally, the frequencies are switchable, so that one may select which frequencies the system outputs. | 10-16-2008 |
20090020228 | PLASMA PROCESSING APPARATUS AND PLASMA GENERATION CHAMBER - A plasma processing apparatus comprises a processing chamber having installed therein a stage upon which a wafer W is placed and a plasma generation chamber communicating with the processing chamber. The plasma generation chamber includes a reaction container having a tubular side wall, a coil wound around the side wall, to which a specific level of high-frequency power is applied, and a film coating covering the outer surface of the side wall. The film coating is a thin film that blocks ultraviolet light originating from the plasma generated inside the reaction container and is constituted of an insulating material with a heat resisting property. | 01-22-2009 |
20090025878 | PLASMA REACTOR WITH REDUCED ELECTRICAL SKEW USING ELECTRICAL BYPASS ELEMENTS - RF ground return current flow is diverted away from asymmetrical features of the reactor chamber by providing bypass current flow paths. One bypass current flow path avoids the pumping port in the chamber floor, and comprises a conductive symmetrical grill extending from the side wall to the grounded pedestal base. Another bypass current flow path avoids the wafer slit valve, and comprises an array of conductive straps bridging the section of the sidewall occupied by the slit valve. | 01-29-2009 |
20090025879 | PLASMA REACTOR WITH REDUCED ELECTRICAL SKEW USING A CONDUCTIVE BAFFLE - RF ground return current flow is diverted away from asymmetrical features of the reactor chamber by providing a bypass current flow path. The bypass current flow path avoids the pumping port in the chamber floor and avoids the wafer slit valve, and is provided by a conductive annular baffle grounded to and extending from the wafer pedestal. Current flow below the level of the annular baffle can be blocked by providing one or more insulating rings in the sidewall or by providing a dielectric sidewall. | 01-29-2009 |
20090032192 | Method for Resist Strip in Presence of Low K Dielectric Material and Apparatus for Performing the Same - A method and apparatus is provided for using a plasma generated from a processing gas mixture including H | 02-05-2009 |
20090056877 | Plasma processing apparatus - A vertical plasma processing apparatus for performing a plasma process on a plurality of target objects together at a time includes an activation mechanism configured to turn a process gas into plasma. The activation mechanism includes a vertically elongated plasma generation box attached to a process container at a position corresponding to a process field to form a plasma generation area airtightly communicating with the process field, an ICP electrode provided to the plasma generation box, and an RF power supply connected to the electrode. | 03-05-2009 |
20090133840 | INDUCTIVELY COUPLED PLASMA APPARATUS - A inductively coupled plasma apparatus includes reaction chamber in which a substrate is loaded, and a double comb type antenna structure including first linear antennas and second linear antennas respectively arranged horizontally to pass through the reaction chamber inside the reaction chamber. The first and second linear antenna are alternately aligned each other. First ends the first linear antennas are protruded out of the reaction chamber and coupled to each other so as to be coupled to a first induced RF power, and first ends of the second linear antennas are protruded out of the reaction chamber in opposition to the first ends of the first linear antennas and coupled to each other so as to be coupled to a second induced RF power. Plasma uniformity is improved and superior plasma uniformity is maintained by adjusting a distance between antennas according to a size of the substrate. | 05-28-2009 |
20090151872 | LOW COST HIGH CONDUCTANCE CHAMBER - A process chamber having high conductance and a method of manufacturing the process chamber are disclosed. The process chamber is machined from a single piece of aluminum where a process cavity and a pump cavity are created by intersecting cylinders. A substrate opening is also created at a bottom of the process cavity to provide conduit for services, such as cooling gas and electrical connections. A large undercut area is formed at a top of the pump cavity between the pump cavity and the process cavity. The undercut extends past the process chamber centerline at the process cavity. A circular saw is used to remove material and create a plenum which extends beyond the process cavity centerline. | 06-18-2009 |
20090165955 | PLASMA PROCESSING APPARATUS AND METHOD WITH CONTROLLED BIASING FUNCTIONS - A plasma processing apparatus including: a phase controller for controlling a phase difference between biasing power supplied to the antenna biasing electrode and biasing power supplied to the substrate electrode to have a difference of 180°±45°; wherein the biasing power supplied to the antenna biasing electrode and the biasing power supplied to the substrate electrode have a same frequency, which same frequency is lower than a frequency of the RF power for plasma generation. A plurality of filters is included, to perform a variety of filtering. | 07-02-2009 |
20090183834 | PLASMA GENERATION APPARATUS - A plasma generation apparatus includes: a chamber having a chamber lid and defining an airtight reaction region; a susceptor in the chamber; a gas supply means supplying a process gas to the chamber; and a toroidal core vertically disposed with respect to the susceptor through the chamber lid, comprising: a toroidal ferromagnetic core combined with the chamber, the toroidal ferromagnetic core having a first portion outside the chamber and a second portion inside the chamber, the second portion having an opening portion; a radio frequency (RF) power supply connected to the chamber; an induction coil electrically connected to the RF power supply, the induction coil rolling the first portion; and a matching circuit matching an impedance between the RF power supply and the induction coil. | 07-23-2009 |
20090199967 | MOUNTING STAGE AND PLASMA PROCESSING APPARATUS - A mounting stage for a plasma processing apparatus that can prevent degradation of an insulating film in a semiconductor device on a substrate. A conductor member is connected to a radio-frequency power source for producing plasma. A dielectric layer is buried in a central portion of an upper surface of the conductor member. An electrostatic chuck is mounted on the dielectric layer. The electrostatic chuck has an electrode film that satisfies the following condition: | 08-13-2009 |
20090218045 | PLASMA PROCESSING APPARATUS - The plasma processing apparatus has a beam-shaped spacer | 09-03-2009 |
20090229757 | PLASMA PROCESSING APPARATUS - The plasma processing apparatus includes: a chamber including an upper electrode and a lower electrode; a matching box electrically connected to the lower electrode, wherein the matching box is freely attached and detached with respect to the lower electrode and supplies a radio frequency (RF) power to the lower electrode; and an air cylinder fixed at the chamber and pulling up the matching box to a position where the matching box is connected to the lower electrode. The lower electrode and the matching box are electrically connected to each other via a cylindrical female terminal connected to one of the lower electrode and the matching box and a male terminal connected to other one of the lower electrode and the matching box and inserted in an inner diameter surface of the female terminal, and at least one of the female terminal and the male terminal includes an elastic conductor covering a contact surface that contacts other one of the female terminal and the male terminal. | 09-17-2009 |
20090242134 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a processing chamber; a lower center electrode mounting thereon a target substrate; a lower peripheral electrode; an upper electrode disposed above the lower center electrode; a gas supplying unit supplying a processing gas into the processing chamber; a first RF power supply outputting a first RF power for generating a plasma of the processing gas; a second RF power supply for outputting a second RF power for introducing ions into the substrate; and a central feed conductor connected to a rear surface of the lower center electrode. The apparatus further includes a circumferential feed conductor connected to a rear surface of the lower peripheral electrode to bypass and supply some of the first RF power to the lower peripheral electrode; and a movable feed conductor electrically connecting the central feed conductor and the circumferential feed conductor for the first RF power by capacitance coupling. | 10-01-2009 |
20090242135 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes: a vacuum-evacuable processing chamber; a lower central electrode; a lower peripheral electrode surrounding the lower central electrode in an annular shape; an upper electrode provided to face the lower central electrode and the lower peripheral electrode; a processing gas supply unit for supplying a processing gas into the processing chamber; an RF power supply for outputting an RF power for generating a plasma; and a power feed conductor connected to a rear surface of the lower peripheral electrode to supply the RF power to the lower peripheral electrode. The apparatus further includes a variable capacitance coupling unit for electrically connecting the lower central electrode with at least one of the power feed conductor and the lower peripheral electrode by capacitance coupling with a variable impedance in order to supply a part of the RF power from the RF power supply to the lower central electrode. | 10-01-2009 |
20090314433 | CATHODE WITH INNER AND OUTER ELECTRODES AT DIFFERENT HEIGHTS - An apparatus for generating uniform plasma across and beyond the peripheral edge of a substrate has a dielectric body with an upper electrode and an annular electrode embedded therein. The outer perimeter of the upper electrode overlaps the inner perimeter of the annular electrode. In one embodiment, the upper electrode and the annular electrode are electrically coupled by molybdenum vias. In one embodiment, the upper electrode is coupled to a DC power source to provide electrostatic force for chucking the substrate. In one embodiment, the upper electrode is coupled to an RF source for exciting one or more processing gasses into plasma for substrate processing. | 12-24-2009 |
20090314434 | INDUCTIVELY COUPLED COIL AND INDUCTIVELY COUPLED PLASMA DEVICE USING THE SAME - The present invention discloses an inductively coupled coil and an inductively coupled plasma device using the same. The inductively coupled coil comprises an internal coil and an exterior coil which are respective from each other and coaxially arranged, internal coil comprising a plurality of internal respective branches having the same configurations which are nested together, the plurality of internal respective branches being arranged symmetrically with respect to an axis of the inductively coupled coil; the external coil comprising a plurality of external respective branches having the same configurations which are nested together, the plurality of external respective branches being arranged symmetrically with respect to the axis of the inductively coupled coil. The inductively coupled coil is located on the reaction chamber of the inductively coupled plasma device and is connected to a RF source. It can make the plasma distribute uniformly on the wafer in the reaction chamber so that the difference in chemical reaction rate on the surface of the wafer is small and the quality of the etched wafer is improved. They can be applied in a semiconductor wafer manufacturing apparatus, and they can also be adapted to other apparatuses. | 12-24-2009 |
20090314435 | PLASMA PROCESSING UNIT - A plasma processing unit of the present invention includes: a processing chamber having a dielectric wall; and a stage provided in the processing chamber, the stage having a placement surface onto which an object to be processed is placed. An induction plasma is generated in the processing chamber via the dielectric wall. The plasma processing unit is provided with a dielectric member capable of detachably covering at least the placement surface of the stage. | 12-24-2009 |
20090321019 | RF POWER DELIVERY SYSTEM IN A SEMICONDUCTOR APPARATUS - Embodiments of the invention provide an apparatus which provide good RF uniformity within a processing chamber. In one embodiment, an apparatus includes a substrate support assembly, a terminal, and a dielectric insulator. The substrate support assembly has a center passage formed along a center axis. An RF transmission line is provided. The RF transmission line has a substantially vertical portion and a substantially horizontal portion, wherein the terminal is coupled to the substantially horizontal portion of the RF transmission line. The dielectric insulator circumscribes the substantially horizontal portion of the RF transmission line. The dielectric insulator has a first opening through which the terminal passes. | 12-31-2009 |
20100018649 | Plasma Processing Apparatus And Method - A plasma processing apparatus includes a sample stage disposed at a lower part of a processing chamber, a bell jar made of an insulative material constituting an upper portion of a vacuum vessel, a coil antenna disposed outside and around the bell jar to which electric power is supplied so as to generate the plasma in a plasma generating space inside of the bell jar, and a Faraday shield mounted on the bell jar and disposed between an external surface of the bell jar and the coil antenna. A ring shaped member made of an electric conductive material is disposed inside of an inner surface of a ring portion of the processing chamber located below a skirt portion of the bell jar and constitutes a part of the processing chamber. The ring shaped member extends upwardly so as to cover a portion of an inner surface of the bell jar. | 01-28-2010 |
20100065215 | Plasma generating apparatus - A plasma generating apparatus including a plurality of plasma source modules. Each plasma source module includes a ferrite core having high magnetic permeability and a plasma channel through which plasma may pass. The plasma generating apparatus may effectively generate and uniformly distribute large-area and high-density plasma without a dielectric window. | 03-18-2010 |
20100078130 | Plasma Processing Apparatus - A plasma processing apparatus including a processing chamber for subjecting an object to plasma processing, a gas inlet, an evacuation device, a sample stage for the object, a power supply, and at least one induction coil. The at least one induction coil enables generation of the plasma in the processing chamber and is formed by connecting a plurality of identical coil elements in a parallel circuit-like arrangement so that current flows in each of the plurality of identical coil elements in a same direction when viewed from the sample stage. | 04-01-2010 |
20100096088 | PLASMA ETCHING APPARATUS - A plasma etching apparatus includes a pressure-reducible chamber | 04-22-2010 |
20100101729 | PROCESS KIT HAVING REDUCED EROSION SENSITIVITY - Process kits for use in a semiconductor process chambers have been provided herein. In some embodiments, a process kit for a semiconductor process chamber includes a body configured to rest about a periphery of a substrate support and having sidewalls defining an opening corresponding to a central region of the substrate support. A lip extends from the sidewalls of the body into the opening, wherein a portion of an upper surface of the lip is configured to be disposed beneath a substrate during processing. A first distance measured between opposing sidewalls of the body is greater than a width across the upper surface of a substrate to be disposed within the opening by at least about 7.87 mm. | 04-29-2010 |
20100175831 | INDUCTIVELY COUPLED PLASMA PROCESSING APPARATUS - An inductively coupled plasma processing apparatus includes a processing chamber for accommodating a target substrate to be processed and performing plasma processing thereon, a mounting table provided in the processing chamber for mounting thereon the target substrate, a processing gas supply system for supplying a processing gas into the processing chamber and a gas exhaust system for exhausting the inside of the processing chamber. Further, in the inductively coupled plasma processing apparatus, a high frequency antenna is provided to form an inductive electric field in the processing chamber and a first high frequency power supply is provided to supply a high frequency power to the high frequency antenna. A metal window made of a nonmagnetic and conductive material is formed between the high frequency antenna and the processing chamber while being insulated from a main body which forms the processing chamber. | 07-15-2010 |
20100186898 | PLASMA PROCESSING APPARATUS - A vertical plasma processing apparatus for performing a plasma process on a plurality of target objects together at a time includes an activation mechanism configured to turn a process gas into plasma. The activation mechanism includes a vertically elongated plasma generation box attached to a process container at a position corresponding to a process field and confining a plasma generation area airtightly communicating with the process field, an ICP electrode disposed outside the plasma generation box and extending in a longitudinal direction of the plasma generation box, and an RF power supply connected to the ICP electrode. The ICP electrode includes a separated portion separated from a wall surface of the plasma generation box by a predetermined distance. | 07-29-2010 |
20100252199 | MULTIFREQUENCY CAPACITIVELY COUPLED PLASMA ETCH CHAMBER - A plasma processing system for use with a gas. The plasma processing system comprises a first electrode, a second electrode, a gas input port, a power source and a passive circuit. The gas input port is operable to provide the gas between the first electrode and the second electrode. The power source is operable to ignite plasma from the gas between the first electrode and the second electrode. The passive circuit is coupled to the second electrode and is configured to adjust one or more of an impedance, a voltage potential, and a DC bias potential of the second electrode. The passive radio frequency circuit comprises a capacitor arranged in parallel with an inductor. | 10-07-2010 |
20100252200 | GROUNDED CONFINEMENT RING HAVING LARGE SURFACE AREA - A wafer processing system is provided for use with a driver and a material supply source. The driver is operable to generate a driving signal. The material supply source is operable to provide a material. The wafer processing system includes an upper confinement chamber portion, a lower confinement chamber portion, a confinement ring, and an electro-static chuck. The upper confinement chamber portion has an upper confinement chamber portion inner surface. The lower confinement chamber portion is detachably disposed in contact with the upper confinement chamber portion. The lower confinement chamber portion has a lower confinement chamber portion inner surface. The confinement ring is removably disposed in contact with the upper confinement chamber portion inner surface and the lower confinement chamber portion inner surface. The confinement ring has a confinement ring inner surface. The electro-static chuck has an electro-static chuck upper surface and is arranged to receive the driving signal. The upper confinement chamber portion, the lower confinement chamber portion, the confinement ring and the electro-static chuck are arranged such that the upper confinement chamber portion inner surface, the lower confinement chamber portion inner surface, the confinement ring inner surface and the electro-static chuck upper surface surround a plasma-forming space that is capable of receiving the material. The upper confinement chamber portion, the lower confinement chamber portion, the confinement ring and the electro-static chuck are operable to transform the material into a plasma when the electro-static chuck receives the driving signal. The confinement ring has a non-rectangular cross section. | 10-07-2010 |
20100263797 | PLASMA PROCESSING APPARATUS - The present invention aims at providing a plasma processing apparatus for performing a plasma processing on a planar substrate body to be processed, the apparatus being capable of generating the plasma with good uniformity and efficiently using the plasma, and having a high productivity. That is, the plasma processing apparatus according to the present invention includes: a vacuum chamber; one or plural antenna supporters (plasma generator supporters) projecting into the internal space of the vacuum chamber; radio-frequency antennas (plasma generators) attached to each antenna supporter; and a pair of substrate body holders provided across the antenna supporter in the vacuum chamber, for holding a planar substrate body to be processed. | 10-21-2010 |
20100269980 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus, for performing a plasma processing on a target substrate by generating an inductively coupled plasma of a processing gas in a depressurized processing chamber, includes: a mounting table; a gas supply unit; a gas exhaust unit; a planar high frequency antenna disposed opposite to the mounting table with a plate-shaped dielectric member therebetween and a shield member covering the high frequency antenna. The high frequency antenna includes an inner antenna element provided at a central portion of a region above the plate-shaped dielectric member and an outer antenna element provided at an edge portion to surround a periphery of the inner antenna element. Further, two ends of each of the antenna elements are open ends and the antenna elements are grounded at central points thereof or points close thereto to resonate at ½ wavelengths of high frequencies from individual high frequency power supplies. | 10-28-2010 |
20100294433 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus, comprising: a RF driving electrode ( | 11-25-2010 |
20100314048 | ADJUSTING CURRENT RATIOS IN INDUCTIVELY COUPLED PLASMA PROCESSING SYSTEMS - A plasma processing system for generating plasma to process at least a wafer. The plasma processing system may include a first coil for conducting a first current for sustaining at least a first portion of the plasma. The plasma processing system may also include a second coil for conducting a second current for sustaining at least a second portion of the plasma. The plasma processing system may also include a power source for powering the first current and the second current. The plasma processing system may also include a parallel circuit for adjusting one of the amperage of the first current and the amperage of the second current. The parallel circuit may be electrically coupled between the power source and at least one of the first coil and the second coil. The parallel circuit may include an inductor and a variable capacitor electrically connected in parallel to each other. | 12-16-2010 |
20110011535 | METHODS AND ARRANGEMENTS FOR CONTROLLING PLASMA PROCESSING PARAMETERS - In a plasma processing chamber, a method for processing a substrate is provided. The substrate is disposed above a chuck and surrounded by an edge ring, which is electrically isolated from the chuck. The method includes providing first RF power to the chuck. The method also includes providing an edge ring RF voltage control arrangement, which is coupled to the edge ring to provide second RF power to the edge ring. The second RF power being delivered to the edge ring has a frequency of about 20 KHz to about 10 MHz, resulting in the edge ring having an edge ring potential. The method further includes generating a plasma within the plasma processing chamber to process the substrate, the substrate being processed while the edge ring RF voltage control arrangement is configured to control the second RF power to the edge ring such that a predefined potential difference is maintained between the edge ring and the substrate. | 01-20-2011 |
20110024045 | Apparatus and Method for Controlling Plasma Potential - A chamber includes a lower electrode and an upper electrode. The lower electrode is defined to transmit a radiofrequency current through the chamber and to support a semiconductor wafer in exposure to a plasma within the chamber. The upper electrode is disposed above and in a spaced apart relationship with the lower electrode. The upper electrode is electrically isolated from the chamber and is defined by a central section and one or more annular sections disposed concentrically outside the central section. Adjacent sections of the upper electrode are electrically separated from each other by a dielectric material. Multiple voltage sources are respectively connected to the upper electrode sections. Each voltage source is defined to control an electric potential of the upper electrode section to which it is connected, relative to the chamber. The electric potential of each upper electrode section influences an electric potential of the plasma within the chamber. | 02-03-2011 |
20110024046 | Apparatus and Method for Controlling Plasma Potential - An apparatus is provided for semiconductor wafer plasma processing. The apparatus includes a chamber having a lower electrode and an upper electrode disposed therein. The lower electrode is defined to transmit a radiofrequency current through the chamber to generate a plasma within the chamber. The lower electrode is also defined to support a semiconductor wafer in exposure to the plasma. The upper electrode is disposed above and in a spaced apart relationship with the lower electrode. The upper electrode is defined by a doped semiconductor material. A doping concentration within the upper electrode varies radially from a center to a periphery of the upper electrode. The electric potential of the upper electrode influences an electric potential of the plasma within the chamber. | 02-03-2011 |
20110030900 | PLASMA CHAMBER HAVING SWITCHABLE BIAS POWER AND A SWITCHABLE FREQUENCY RF MATCH NETWORK THEREFOR - A plasma chamber having a switchable bias frequency superimposed onto plasma source frequency and applied to the cathode. A power supplier capable of generating multiple RF bias frequencies is coupled into a match network through a switch. The match network couples one of the bias frequencies to the cathode. Another match network applied a source RF power to the cathode. One parallel connection of variable shunt capacitor and fixed capacitor are provided between ground and input of the switch and another is connected between ground and the input of the source RF match network. | 02-10-2011 |
20110048644 | PLASMA REACTOR WITH TILTABLE OVERHEAD RF INDUCTIVE SOURCE - Correction of skew in plasma etch rate distribution is performed by tilting the overhead RF source power applicator about a tilt axis whose angle is determined from skew in processing data. Complete freedom of movement is provided by incorporating exactly three axial motion servos supporting a floating plate from which the overhead RF source power applicator is suspended. | 03-03-2011 |
20110120652 | PLASMA GENERATING APPARATUS - A plasma generating apparatus is provided. The plasma generating apparatus includes a plasma process chamber, a top electrode board, a bottom electrode board and at least one pair of impedance modulators. The top electrode board is coupled to a radio frequency (RF) power source. The impedance modulators are provided in pairs and are parallel-connected to the top electrode board at two geometrically symmetrical locations, wherein each impedance modulator has an impedance modulation curve whose value changes with time, and the value of a parallel equivalent impedance curve of the impedance modulation curves is constant with time. | 05-26-2011 |
20110120653 | ANTENNA FOR PLASMA PROCESSOR AND APPARATUS - An antenna includes excitation terminals responsive to an RF source to supply an RF electromagnetic field to a plasma that processes a workpiece in a vacuum chamber. The coil includes a transformer having a primary winding coupled to the excitation terminals and a multi-turn plasma excitation secondary winding connected in series with a capacitor. | 05-26-2011 |
20110146911 | PLASMA PROCESSING SYSTEM WITH LOCALLY-EFFICIENT INDUCTIVE PLASMA COUPLING - An inductively coupled plasma source is provided with a peripheral ionization source for producing a high-density plasma in a vacuum chamber for semiconductor wafer coating or etching. The source includes a segmented configuration having high and low radiation segments and produces a generally ring-shaped array of alternating high and low energy concentrations in the plasma around the periphery of the chamber. Energy is coupled from a segmented low inductance antenna through a dielectric window or array of windows and through a segmented shield or baffle. The antenna has concentrated conductor segments through which current flows in lengths of closely-spaced windings of a single conductor to produce high magnetic fields that couple through the high-transparency shield segments into the chamber, and alternating distributed conductor segments through which current flows in lengths of more widely-spaced windings of the conductor to produce weaker magnetic fields aligned with more opaque shield sections that couple less energy to the plasma. | 06-23-2011 |
20110226422 | RF-DRIVEN ION SOURCE WITH A BACK-STREAMING ELECTRON DUMP - A novel ion source is described having an improved lifetime. The ion source, in one embodiment, is a proton source, including an external RF antenna mounted to an RF window. To prevent backstreaming electrons formed in the beam column from striking the RF window, a back streaming electron dump is provided, which in one embodiment is formed of a cylindrical tube, open at one end to the ion source chamber and capped at its other end by a metal plug. The plug, maintained at the same electrical potential as the source, captures these backstreaming electrons, and thus prevents localized heating of the window, which due to said heating, might otherwise cause window damage. | 09-22-2011 |
20110297320 | PLASMA PROCESSING APPARATUS - The invention aims at suppressing the self bias generated at the surface of the inner wall of the vacuum processing chamber, to thereby suppress the chipping of the inner wall surface of the vacuum processing chamber or the consumption of the inner parts of the vacuum processing chamber. The present invention provides a plasma processing apparatus comprising a vacuum processing chamber, a vacuum processing chamber lid sealing an upper portion of the vacuum processing chamber, an induction antenna, a Faraday shield disposed between the induction antenna and the vacuum processing chamber lid, and a high frequency power supply for supplying high frequency power to the induction antenna, wherein the induction antenna is divided into two or more parts, the Faraday shield is divided into a division number corresponding to the division number of the induction antenna, and high frequency voltages are applied thereto via a matching box from the one high frequency power supply. | 12-08-2011 |
20120000609 | POWER SUPPLYING MEANS HAVING SHIELDING MEANS FOR FEEDING LINE AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME - A substrate processing apparatus includes: a process chamber including a chamber lid and a chamber body to provide a reaction space therein; a source electrode in the process chamber; a radio frequency (RF) power source for supplying an RF power to the source electrode; a feeding line connecting the source electrode and the RF power source; and a shielding part wrapping the feeding line to block an electric field. | 01-05-2012 |
20120006490 | Plasma Etching Apparatus - The present invention relates to an etching apparatus which is capable of etching the entire surface of a substrate uniformly even if the substrate is large-sized and in which deterioration of etching shape does not occur. An etching apparatus | 01-12-2012 |
20120031561 | PLASMA GENERATING APPARATUS - A plasma generating apparatus is provided. The plasma generating apparatus may include a vacuum chamber, an ElectroStatic Chuck (ESC), a first antenna part including a first antenna and a first antenna cover, and a second antenna part including a second antenna and a second antenna cover. The vacuum chamber has a vacant interior and a top sealed by an insulation vacuum plate. The ESC is disposed at a center of the inside of the vacuum chamber. The first antenna is coupled to a through-hole of the second antenna. The first antenna cover airtightly covers a top of the first antenna. The second antenna is coupled to the through-hole of the insulation vacuum plate. The second antenna cover airtightly covers a top of the first antenna part and the second antenna. | 02-09-2012 |
20120031562 | PLASMA PROCESSING APPARATUS - The present invention provides a plasma processing device capable of inducing a strong radio-frequency electric field within a vacuum container while preventing sputtering of the antenna conductor, an increase in the temperature of the antenna conductor and the formation of particles. A plasma processing device according to the present invention includes a vacuum container, a radio-frequency antenna placed between an inner surface and an outer surface of a wall of the vacuum container, and a dielectric separating member for separating the radio-frequency antenna from an internal space of the vacuum container. As compared to a device using an external antenna, the present device can induce a stronger magnetic field in the vacuum container. The separating member has the effects of preventing the radio-frequency antenna from undergoing sputtering by the plasma produced in the vacuum container, suppressing an increase in the temperature of the radio-frequency antenna, and preventing the formation of particles. | 02-09-2012 |
20120031563 | PLASMA PROCESSING DEVICE - An inductively coupled plasma processing device using a radio-frequency electric discharge, including: a vacuum container; an antenna-placing section provided between an inner surface and an outer surface of a wall of the vacuum container; a radio-frequency antenna placed in the antenna-placing section, the radio-frequency antenna being terminated without completing one turn; and a dielectric separating member separating the antenna-placing section and an internal space of the vacuum container, wherein the radio-frequency antenna has a length equal to or shorter than one quarter of a wavelength of the radio-frequency waves. | 02-09-2012 |
20120073756 | PLASMA PROCESSING APPARATUS - There is provided an inductively coupled plasma etching apparatus capable of suppressing a wavelength effect within a RF antenna and performing a plasma process uniformly in both a circumferential and a radial direction. In the plasma etching apparatus, a RF antenna | 03-29-2012 |
20120073757 | PLASMA PROCESSING APPARATUS - There is provided a plasma processing apparatus including a processing chamber having a dielectric window; a substrate holding unit for holding thereon a processing target substrate within the processing chamber; a processing gas supply unit configured to supply a processing gas into the processing chamber in order to perform a plasma process on the substrate; a RF antenna provided outside the dielectric window in order to generate plasma of the processing gas within the processing chamber by inductive coupling; and a high frequency power supply unit configured to supply a high frequency power having a frequency for generating a high frequency electric discharge of the processing gas. Here, the RF antenna includes a plurality of coil segments that are arranged along a loop having a preset shape and a preset size while electrically connected in parallel to each other. | 03-29-2012 |
20120090785 | ANTENNA UNIT FOR GENERATING PLASMA AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME - An antenna unit for generating a plasma includes: a first antenna including a first incoming portion and a plurality of first sub-antennas divided from the first incoming portion; and a second antenna including a second incoming portion and a plurality of second sub-antennas divided from the second incoming portion, the first and second incoming portions constituting a coaxial line. | 04-19-2012 |
20120103524 | PLASMA PROCESSING APPARATUS WITH REDUCED EFFECTS OF PROCESS CHAMBER ASYMMETRY - Plasma processing apparatus that provide an asymmetric plasma distribution within the processing apparatus are provided herein. In some embodiments, a plasma processing apparatus may include a process chamber having a processing volume with a substrate support disposed therein; and a first RF coil disposed above the substrate support to couple RF energy into the processing volume, wherein an electric field generated by RF energy moving along the first RF coil is asymmetric about a central axis of the substrate support. In some embodiments, a pump port is disposed asymmetrically with respect to the processing volume to remove one or more gases from the processing volume. In some embodiments, the first RF coil is asymmetrically disposed about the central axis of the substrate support. | 05-03-2012 |
20120103525 | PLASMA PROCESSING APPARATUS - A vertical plasma processing apparatus for performing a plasma process on a plurality of target objects together at a time includes an activation mechanism configured to turn a process gas into plasma. The activation mechanism includes a vertically elongated plasma generation box attached to a process container at a position corresponding to a process field to form a plasma generation area airtightly communicating with the process field, an ICP electrode provided to the plasma generation box, and an RF power supply connected to the electrode. | 05-03-2012 |
20120247679 | PLASMA PROCESSING APPARATUS - In an inductively coupled plasma processing apparatus, it is possible to control a plasma density distribution while suppressing a wavelength effect within a RF antenna. Provided at a ceiling of a chamber | 10-04-2012 |
20120267051 | INDUCTIVELY COUPLED PLASMA PROCESSING APPARATUS - An inductively coupled plasma processing apparatus performs plasma processing on a substrate by generating an inductively coupled plasma in a plasma generation region in a processing chamber. The apparatus includes a high frequency antenna for generating the inductively coupled plasma in the plasma generation region and a metal window provided between the plasma generation region and the high frequency antenna. The metal window is firstly divided into two or more sections electrically insulated from each other by a line along a peripheral direction of the metal window and then secondly divided into sections electrically insulated from each other by lines along directions crossing with the peripheral direction. | 10-25-2012 |
20120273136 | Plasma Processing Apparatus - A plasma processing apparatus includes a processing chamber, a sample stage, a radio-frequency power supply which enables generation of plasma in the processing chamber, and at least one induction coil. The induction coil is formed by connecting a plurality of identical coil elements so that a same radio-frequency voltage is applied to each of the plurality of identical coil elements, and each input terminals of the identical coil elements is displaced at intervals of an angle calculated by dividing 360° by the number of identical coil elements. Continuous conductor portions of the identical coil elements are formed on different adjacent surfaces of the annular ring and constituted so as to be displaced from one another for a predetermined angle at a time so as to extend along a circumferential direction of the different adjacent surfaces of the annular ring. | 11-01-2012 |
20120291955 | LARGE AREA ICP SOURCE FOR PLASMA APPLICATION - An arrangement for coupling RF energy for inductively coupled plasma chamber. The RF coil or radiator is embedded within a groove made in the ceiling of the chamber and an insulating filler covers the coil within the groove. The ceiling may be made of two plates: an upper plate made of conductive material and a bottom plate made of dielectric material. The two plates are in physical contact. A magnetic shield may be provided over the coil to control the spread of the magnetic field from the coil. Fluid channels may be made in the conductive plate to provide thermal control. Also, fluid conduits may be provided to allow injecting gas into the pace between the metal and dielectric plates. | 11-22-2012 |
20120298303 | PLASMA TREATMENT APPARATUS - Provided is a plasma treatment apparatus capable of uniform substrate treatment by correction of unevenness in a plasma density distribution. The apparatus has a configuration such that a substrate is treated with plasma, and an evacuated container is provided with an annular antenna arranged around an outer periphery of the container, and is formed of a power supply container, and a process container where the substrate is placed, which communicates with an internal space of the power supply container. The plasma is generated in the power supply container by radio-frequency power supplied to the antenna. The plasma is diffused into the process container by a magnetic field of solenoid coils arranged around an outer periphery of the antenna. The inclination of the magnetic field is adjusted by an inclination adjustment means for adjusting the inclination of the solenoid coils with respect to the process substrate. | 11-29-2012 |
20120312475 | APPARATUS FOR PROCESSING A SUBSTRATE USING PLASMA - A capacitively-coupled plasma processing system having a plasma processing chamber for processing a substrate is provided. The plasma processing system includes at least an upper electrode and a lower electrode for processing the substrate, the substrate being disposed on the lower electrode during plasma processing. The plasma processing system further includes means for providing at least a first RF signal to the lower electrode, the first RF signal having a first RF frequency. The first RF signal couples with a plasma in the plasma processing chamber, thereby inducing an induced RF signal on the upper electrode. The plasma processing system further includes means for rectifying the induced RF signal to generate a rectified RF signal such that the rectified RF signal is more positively biased than negatively biased, wherein the substrate is configured to be processed while the rectified RF signal is provided to the upper electrode. | 12-13-2012 |
20130014898 | PLASMA BREAKERS AND METHODS THEREFORAANM Hegde; Hariharakeshava SarpangalaAACI FremontAAST CAAACO USAAGP Hegde; Hariharakeshava Sarpangala Fremont CA US - A plasma processing system comprising of a plasma source having a source enclosure for generating plasma is provided. The plasma processing system also includes a plasma breaker disposed inside the source enclosure. The plasma breaker has a plurality of trenches wherein at least one of the trenches has a sufficiently high aspect ratio such that materials deposited inside the source enclosure covers a surface of the plasma breaker without being deposited at a bottom of at least one of the trenches for at least a time period (t). | 01-17-2013 |
20130062016 | TRANSFER APPARATUS AND PLASMA PROCESSING SYSTEM - A transfer apparatus transfers an object to be transferred onto a case. The transfer apparatus includes a transfer arm, an arm shaft, a plurality of electromagnets, and a control unit. The transfer arm has a pick unit on a front end thereof and extends and retracts in a horizontal direction. The object to be transferred is held on the pick unit. The arm shaft supports the transfer arm. The plurality of electromagnets apply an force in upward direction to the transfer arm by generating a magnetic field in the case. The control unit controls the plurality of electromagnets in such a manner that when the transfer arm extends and retracts in the horizontal direction, the force in upward direction applied to the transfer arm increases as a length from the arm shaft to the front end of the transfer arm increases. | 03-14-2013 |
20130087288 | PLASMA PROCESSING APPARATUS - In a plasma processing apparatus that can adjust an induction magnetic field distribution of power feeding sections of an induction coil, correct a plasma distribution on a specimen, and apply uniform plasma processing to the specimen, the specimen is subjected to plasma processing, a dielectric window that forms the upper surface of the vacuum processing chamber, a gas lead-in section that leads gas into the vacuum processing chamber, a specimen table that is arranged in the vacuum processing chamber and on which the specimen is placed, an induction coil provided above the dielectric window, and a radio-frequency power supply that supplies radio-frequency power to the induction coil. The plasma processing apparatus includes a flat conductor arranged below the induction coil. The induction coil includes crossing power feeding sections. The conductor is arranged below the power feeding sections. | 04-11-2013 |
20130160949 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus which includes a plasma processing chamber for plasma-processing a sample, an induction antenna disposed outside the plasma processing chamber, a radio-frequency power supply for supplying radio-frequency power to the induction antenna, and a unit for controlling electrostatic capacity including a Faraday shield capacitively coupled with plasma and a dielectric window allowing an induction magnetic field to transmit into the plasma processing chamber is provided; electrostatic capacity between the Faraday shield and the dielectric window at a center portion and electrostatic capacity between the Faraday shield and the dielectric window at an edge portion are controlled. | 06-27-2013 |
20130160950 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus capable of adjusting a processing rate (e.g., etching or deposition rate) of a sample locally by adjusting a plasma density may be provided. For example, the plasma processing apparatus may include a processing chamber, an antenna coil inside the processing chamber to generate magnetic field, and a magnetic field blocking member configured to block the magnetic field generated at the antenna coil such that an intensity of the magnetic field is controlled by adjusting a gap distance between the magnetic field blocking member and the antenna coil. According to the plasma processing apparatus, an asymmetric etching of the sample can be minimized. | 06-27-2013 |
20130220548 | PLASMA PROCESSING DEVICE - A plasma processing device has: a metallic vacuum chamber; an antenna-placing section in which a radio-frequency antenna is placed inside a through-hole (hollow space) provided in an upper wall of the vacuum chamber; and a dielectric separating plate covering the entire inner surface of the upper wall. In this plasma processing device, the entire inner surface side of the upper wall is covered with the separating plate so that surfaces in different level otherwise formed when a smaller separating plate is used is not formed between the inner surface and the separating plate. Therefore, the generation of particles caused by the formation of adhered materials on the surfaces in different level is prevented. | 08-29-2013 |
20130220549 | USING POSITIVE DC OFFSET OF BIAS RF TO NEUTRALIZE CHARGE BUILD-UP OF ETCH FEATURES - Apparatus, systems and methods for plasma etching substrates are provided that achieve dissipation of charge build-up on a substrate being plasma etched to avoid notching or twisting in high aspect ratio contents and similar features. Charge build-up on a substrate being etched by plasma etching can be dissipated by a method for etching a substrate, the method comprising: providing a plasma processing chamber comprising a chamber enclosure and a substrate support adapted to support a substrate within the chamber enclosure; supporting a substrate on the substrate support; forming a plasma within the chamber enclosure such that a surface of the substrate is in contact with the plasma; etching the substrate by generating a negative bias on the substrate surface relative to the plasma; and intermittently changing the bias on the substrate surface to positive relative to the plasma. The present method can be integrated into known plasma processing systems. | 08-29-2013 |
20130264015 | CONTROL OF BEVEL ETCH FILM PROFILE USING PLASMA EXCLUSION ZONE RINGS LARGER THAN THE WAFER DIAMETER - A method of cleaning a bevel edge of a semiconductor substrate is provided. A semiconductor substrate is placed on a substrate support in a reaction chamber of a plasma processing apparatus. The substrate has a dielectric layer overlying a top surface and a bevel edge of the substrate, the layer extending above and below an apex of the bevel edge. A process gas is introduced into the reaction chamber and energized into a plasma. The bevel edge is cleaned with the plasma so as to remove the layer below the apex without removing all of the layer above the apex. | 10-10-2013 |
20130299091 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a processing chamber, a flat-plate-like dielectric window, an induction coil, a flat electrode, a RF power source, a gas supply unit, and a sample stage on which a sample is mounted. A process gas supply plate is provided opposite the dielectric window on an inner side of the processing chamber, and a recess portion is formed in the flat electrode on a side opposite the induction coil corresponding to a gas supply position of the process gas supply plate. | 11-14-2013 |
20130312913 | ARRANGEMENT FOR DEPOSITING BEVEL PROTECTIVE FILM - An arrangement for depositing a film at a bevel edge of a substrate in a plasma chamber. The arrangement includes a gas delivery system for supplying gas into the chamber. The arrangement also includes a pair of electrodes including a movable electrode and a stationary electrode, wherein the substrate is disposed on one of the pair of electrodes. The arrangement further includes a gap controller module configured for adjusting an electrode gap between the pair of electrodes to a gap distance configured to prevent plasma formation over a center portion of the substrate. The gap distance is also dimensioned such that a plasma-sustainable condition around the bevel edge of the substrate is formed. The arrangement moreover includes a heater disposed below the substrate and powered by an RE source, wherein the heater is maintained at a chuck temperature conducive for facilitating film deposition on the bevel edge of the substrate. | 11-28-2013 |
20130340940 | RF FEED LINE - This disclosure relates to a flexible triplate stripline that can operate in temperatures of 150 C-250 C, flexible to move up/down with the top of a plasma reactor, and prevent plasma generation near the power transmission line in the stripline. The transmission line may be exposed to ambient conditions. The risk of generating plasma near the transmission line may be minimized by optimizing the height and width of the air gap adjacent to the transmission line and decreasing the voltage in a portion of the stripline by widening the transmission line. | 12-26-2013 |
20130340941 | LENS OFFSET - This disclosure relates a system and techniques for adjusting component parts of a Plasma-enhanced processing system. The electric field uniformity generated by plasma processing may be improved by adjusting the distance between a cavity of an upper electrode and an insulating plate that covers, at least a portion of, the cavity. In another embodiment, the electric field uniformity may be improved by adjusting the distance between the substrate and the upper electrode. | 12-26-2013 |
20140000810 | Plasma Activation System | 01-02-2014 |
20140020836 | INDUCTIVELY COUPLED PLASMA SOURCE WITH PLURAL TOP COILS OVER A CEILING AND AN INDEPENDENT SIDE COIL - A plasma reactor for processing a workplace includes a reactor chamber having a ceiling and a sidewali and a workplace support facing the ceiling and defining a processing region, and a pair of concentric independently excited RF coil antennas overlying the ceiling and a side RF coil concentric with the side wall and facing the side wall below the ceiling, and being excited independently. | 01-23-2014 |
20140020837 | INDUCTIVELY COUPLED PLASMA SOURCE WITH MULTIPLE DIELECTRIC WINDOWS AND WINDOW-SUPPORTING STRUCTURE - A plasma reactor enclosure has a metallic portion and a dielectric portion of plural dielectric windows supported on the metallic portion, each of the dielectric windows extending around an axis of symmetry. Plural concentric coil antennas are disposed on an external side of the enclosure, respective ones of the coil antennas facing respective ones of the dielectric windows. | 01-23-2014 |
20140020838 | SYMMETRICAL INDUCTIVELY COUPLED PLASMA SOURCE WITH COAXIAL RF FEED AND COAXIAL SHIELDING - A plasma reactor has an overhead multiple coil inductive plasma source with symmetric RF feeds and symmetrical RF shielding around the symmetric RF feeds. | 01-23-2014 |
20140020839 | INDUCTIVELY COUPLED PLASMA SOURCE WITH SYMMETRICAL RF FEED - A plasma reactor has an overhead multiple coil inductive plasma source with RF feeds arranged in equilateral symmetry. | 01-23-2014 |
20140034241 | TEMPERATURE ENHANCED ELECTROSTATIC CHUCKING IN PLASMA PROCESSING APPARATUS - Methods and systems for temperature enhanced chucking and dechucking of resistive substrates in a plasma processing apparatus are described herein. In certain embodiments, methods and systems incorporate modulating a glass carrier substrate temperature during a plasma etch process to chuck and dechuck the carrier at first temperatures elevated relative to second temperatures utilized during plasma etching. In embodiments, one or more of plasma heat, lamp heat, resistive heat, and fluid heat transfer are controlled to modulate the carrier substrate temperature between chucking temperatures and process temperatures with each run of the plasma etch process. | 02-06-2014 |
20140048211 | PLASMA PROCESSING APPARATUS - An inductively coupled plasma process can effectively and properly control plasma density distribution within donut-shaped plasma in a processing chamber is provided. In an inductively coupled plasma processing apparatus, a RF antenna | 02-20-2014 |
20140090783 | APPARATUS FOR TREATING SUBSTRATE - The present invention disclosed herein relates to a substrate treating apparatus, and more particularly, to an apparatus for treating a substrate using plasma. Embodiments of the present invention provide substrate treating apparatuses including a chamber having a treating space defined therein, a support member disposed in the chamber to support a substrate, a gas supply unit supplying a gas into the chamber, a plasma source generating plasma from the gas supplied into the chamber, a baffle disposed to surround the support member in the chamber and having through holes to exhaust a gas in the treating space, and a shielding unit preventing an electromagnetic field from an inside of the chamber to an outside of the chamber. | 04-03-2014 |
20140144584 | PLASMA ANTENNA AND APPARATUS FOR GENERATING PLASMA HAVING THE SAME - Provided are a plasma antenna and a plasma generating apparatus including the same. The plasma antenna includes a first antenna inducing electromagnetic fields by using an RF signal, a second antenna inducing electromagnetic fields by using the RF signal, and a capacitor connected between an input terminal of the first antenna and an input terminal of the second antenna. | 05-29-2014 |
20140144585 | HYBRID LASER AND PLASMA ETCH WAFER DICING USING SUBSTRATE CARRIER - Methods of and apparatuses for dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The semiconductor wafer is supported by a substrate carrier. The mask is then patterned with a laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits while supported by the substrate carrier. | 05-29-2014 |
20140150975 | PLASMA PROCESSING DEVICE - The present invention provides an internal antenna type plasma processing device which is easily maintained and capable of producing stable plasma. The plasma processing device has a plurality of antenna units | 06-05-2014 |
20140190635 | PLASMA CHAMBER AND APPARATUS FOR TREATING SUBSTRATE - Provided are a plasma chamber and a substrate treating apparatus. The plasma chamber includes a housing in which a gas is injected to generate plasma, a first coil disposed on one surface of the housing, and a second coil disposed on the other surface of the housing. | 07-10-2014 |
20140262043 | SUBSTRATE SUPPORT FOR PLASMA ETCH OPERATIONS - Methods and apparatus for processing substrates are disclosed herein. In some embodiments, a substrate support to support a substrate in a processing chamber includes a dielectric insulator plate; a conductive plate supported on the dielectric insulator plate, the conductive plate comprising a top surface and a bottom surface defining a thickness between the top surface and the bottom surface, wherein an edge portion of the conductive plate tapers in a radially outward direction; and a dielectric plate comprising a substrate support surface disposed upon the top surface of the conductor plate. | 09-18-2014 |
20140262044 | MU METAL SHIELD COVER - Embodiments of the present invention generally relate to an apparatus for processing substrates having improved magnetic shielding. One embodiment of the present invention provides a plasma processing chamber having an RF match, a plasma source and a plasma region defined between a chamber ceiling and a substrate support. At least one of the RF match, plasma source and plasma region is shielded from any external magnetic field with a shielding material that has a relative magnetic permeability ranging from about 20,000 to about 200,000. As a result, the inherent process non-uniformities of the hardware may be reduced effectively without the overlaid non-uniformities from external factors such as earth's geomagnetic field. | 09-18-2014 |
20140299273 | MULTI-SEGMENT ELECTRODE ASSEMBLY AND METHODS THEREFOR - A multi-segment electrode assembly having a plurality of electrode segments for modifying a plasma in a plasma processing chamber is disclosed. There is included a first powered electrode segment having a first plasma-facing surface, the first powered electrode segment configured to be powered by a first RE signal. There is also included a second powered electrode segment having a second plasma-facing surface, the second powered electrode segment configured to be powered by a second RE signal. The second powered electrode segment is electrically insulated from the first powered electrode segment, while at least one of the first plasma-facing surface and the second plasma-facing surface is non-planar. | 10-09-2014 |
20140345803 | METHOD AND APPARATUS FOR STABLE PLASMA PROCESSING - A method and apparatus for etching a substrate using a spatially modified plasma is provided herein. In one embodiment, the method includes providing a process chamber having a plasma stabilizer disposed above a substrate support pedestal. A substrate is placed upon the pedestal. A process gas is introduced into the process chamber and a plasma is formed from the process gas. The substrate is etched with a plasma having an ion density to radical density ratio defined by the plasma stabilizer. | 11-27-2014 |
20150041062 | PLASMA PROCESSING CHAMBER WITH REMOVABLE BODY - An apparatus for plasma processing a wafer is provided. A bottom plate is provided. A tubular chamber wall with a wafer aperture is adjacent to the bottom plate. A bottom removable seal provides a vacuum seal between the bottom plate and the tubular chamber wall at a first end of the tubular wall. A top plate is adjacent to the tubular chamber wall. A top removable seal provides a vacuum seal between a second end of the tubular wall and the top plate. A vertical seal is provided, where a vertical movement of the tubular wall allows the vertical seal to create a seal around the wafer aperture. A bottom alignment guide aligns the tubular chamber wall with the bottom plate. A top alignment guide aligns the top plate with the tubular chamber wall. A wafer chuck is disposed between the bottom plate and the top plate. | 02-12-2015 |
20150129133 | PLASMA DEVICE - The plasma device is disclosed, the plasma device including a chamber configured to accommodate a substrate, and a plasma source formed at one side of the chamber to excite a reaction gas of the substrate introduced into the chamber in a plasma state, wherein the plasma source moves in parallel with the substrate, whereby the substrate can be uniformly plasma-processed. | 05-14-2015 |
20150311038 | PLASMA-GENERATING UNIT AND SUBSTRATE TREATMENT APPARATUS INCLUDING THE SAME - Provided is a substrate treatment apparatus including a process chamber, a supporting unit, a gas supplying unit, and a plasma generating unit. The plasma generating unit may include a power, a primary antenna connected to the power through a first line, a secondary antenna connected to the power through a second line diverging from the first line at a first junction, the primary and secondary antennas being connected in parallel to the power, a third reactance device connected to the power through a third line diverging from the second line at a second junction, the secondary antenna and the third reactance device being connected in parallel to the power, and a variable reactance installed on the second line between the second junction and the secondary antenna. | 10-29-2015 |
20150332941 | METHODS AND APPARATUS FOR PROCESSING SUBSTRATES USING AN ION SHIELD - Methods and apparatus for processing a substrate are provided. In some embodiments, a method of processing a substrate having a first layer may include disposing a substrate atop a substrate support in a lower processing volume of a process chamber beneath an ion shield having a bias power applied thereto, the ion shield comprising a substantially flat member supported parallel to the substrate support, and a plurality of apertures formed through the flat member, wherein the ratio of the aperture diameter to the thickness flat member ranges from about 10:1-1:10; flowing a process gas into an upper processing volume above the ion shield; forming a plasma from the process gas within the upper processing volume; treating the first layer with neutral radicals that pass through the ion shield; and heating the substrate to a temperature of up to about 550 degrees Celsius while treating the first layer. | 11-19-2015 |
20150348761 | Top Dielectric Quartz Plate and Slot Antenna Concept - Techniques disclosed herein include an apparatus for treating substrates with plasma generated within a plasma processing chamber. In one embodiment, dielectric plates, of a plasma system can include structural features configured to assist in generating a uniform plasma. Such structural features define a surface shape, on a surface that faces the plasma. Such structural features can include a set of concentric rings having an approximately non-linear cross section, and protrude into the surface of the dielectric plate. Such structural features may include feature depth, width, and periodic patterns that may vary depth and width along the concentric rings. | 12-03-2015 |
20150357161 | DEFECT CONTROL IN RF PLASMA SUBSTRATE PROCESSING SYSTEMS USING DC BIAS VOLTAGE DURING MOVEMENT OF SUBSTRATES - A substrate processing system includes a processing chamber and an upper electrode arranged in the processing chamber. A pedestal is configured to support a substrate during processing and includes a lower electrode. An RF generating system is configured to generate RF plasma between the upper electrode and the lower electrode by supplying an RF voltage. A bias generating circuit is configured to selectively supply a DC bias voltage to one of the upper electrode and the lower electrode. A start of the DC bias voltage is initiated one of a first predetermined period before the RF plasma is extinguished and a second predetermined period after the RF plasma is extinguished. A substrate movement system is configured to move the substrate relative to the pedestal while the DC bias voltage is generated. | 12-10-2015 |
20160042927 | EDGE EXCLUSION CONTROL WITH ADJUSTABLE PLASMA EXCLUSION ZONE RING - Systems and methods for edge exclusion control are described. One of the systems includes a plasma chamber. The plasma processing chamber includes a lower electrode having a surface for supporting a substrate. The lower electrode is coupled with a radio frequency (RF) power supply. The plasma processing chamber further includes an upper electrode disposed over the lower electrode. The upper electrode is electrically grounded. The plasma processing chamber includes an upper dielectric ring surrounding the upper electrode. The upper dielectric ring is moved using a mechanism for setting a vertical position of the upper dielectric ring separate from a position of the upper electrode. The system further includes an upper electrode extension surrounding the upper dielectric ring. The upper electrode extension is electrically grounded. The system also includes a lower electrode extension surrounding the lower dielectric ring. The lower electrode extension is arranged opposite the upper electrode extension. | 02-11-2016 |
20160064267 | SEALING STRUCTURE FOR WORKPIECE TO SUBSTRATE BONDING IN A PROCESSING CHAMBER - A sealing structure is between a workpiece or substrate and a carrier for plasma processing. In one example, a substrate carrier has a top surface for holding a substrate, the top surface having a perimeter and a resilient sealing ridge on the perimeter of the top surface to contact the substrate when the substrate is being carried on the carrier. | 03-03-2016 |
20160093471 | Rotating RF Electric Field Antenna For Uniform Plasma Generation - A plasma processing chamber includes a substrate support for receiving and holding a substrate. A window in the plasma processing chamber is oriented over the substrate support. A plurality of transformer coupled plasma coils is disposed over the window. The TCP coils are disposed radially equidistant from one another. Each TCP coil is connected to a power circuitry at one end and the opposite end is electrically grounded. The power circuitry includes an RF source and a phase-shift modulator. The RF source is used to apply RF power to the TCP coils at a generator frequency to generate RF electric field. The phase-shift modulator coupled to the RF source is configured to apply a modulation frequency that is phase-shifted to allow the RF electric field applied to each of the TCP coils to transition in a rotating pattern. | 03-31-2016 |
20160118222 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a processing chamber, a part of which is formed of a dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting a target substrate; a processing gas supply unit for supplying a processing gas to the processing chamber to perform a plasma process on the target substrate; an RF antenna, provided outside the dielectric window, for generating a plasma from the processing gas by an inductive coupling in the processing chamber; and an RF power supply unit for supplying an RF power to the RF antenna. The RF antenna includes a single-wound or multi-wound coil conductor having a cutout portion in a coil circling direction; and a pair of RF power lines from the RF power supply unit are respectively connected to a pair of coil end portions of the coil conductor that are opposite to each other via the cutout portion. | 04-28-2016 |
20160118229 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes: a vessel which includes a reaction chamber, atmosphere within the reaction chamber capable of being depressurized; a lower electrode which supports an object to be processed within the reaction chamber; a dielectric member which includes a first surface and a second surface opposite to the first surface, and which closes an opening of the vessel such that the first surface opposes an outside of the reaction chamber and the second surface opposes the object to be processed; and a coil which opposes the first surface of the dielectric member, and which generates plasma within the reaction chamber. The dielectric member has a groove formed in the first surface of the dielectric member, and at least a part of the coil is disposed in the groove. | 04-28-2016 |
20160155613 | PLASMA PROCESSING APPARATUS | 06-02-2016 |
20160172160 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD | 06-16-2016 |
20160196953 | INDUCTIVELY COUPLED PLASMA APPARATUS | 07-07-2016 |
20160203951 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD | 07-14-2016 |
20180025893 | Edge Exclusion Control With Adjustable Plasma Exclusion Zone Ring | 01-25-2018 |
20180026589 | BROADBAND MATCHING NETWORK | 01-25-2018 |
20190148114 | Systems and Methods for Applying Frequency and Match Tuning in a Non-Overlapping Manner for Processing Substrate | 05-16-2019 |
20190148119 | PLASMA PROCESSING APPARATUS | 05-16-2019 |