Entries |
Document | Title | Date |
20080202689 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes: a chamber; an insulating member disposed in an upper portion of the chamber; a ground electrode formed at a side wall of the chamber, a ground potential being applied to the ground electrode; and a lower electrode disposed in a lower portion of the chamber, a substrate being placed on the lower electrode, wherein the lower electrode is divided into a plurality of electrodes. | 08-28-2008 |
20080236751 | Plasma Processing Apparatus - A plasma processing apparatus wherein a layer structure consisting of plural layers formed in stack one upon another on a semiconductor wafer placed on the sample holder located in the process chamber, is etched with plasma generated in the process chamber by supplying high frequency power to the electrode disposed in the sample holder, the apparatus comprising a ring-shaped electrode disposed above the electrode and around the periphery of the top portion of the sample holder, an outer circumferential ring of dielectric material disposed above the ring-shaped electrode and opposite to the plasma, and a power source for supplying power at different values to the ring-shaped electrode depending on the sorts of layers of the layer structure. | 10-02-2008 |
20080236752 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus capable of, over a prolonged period of time, controlling a decrease in the value of a DC current flowing within an accommodating compartment. The plasma processing apparatus comprises an accommodating compartment adapted to accommodate a substrate and perform a plasma treatment thereon, a high-frequency power source adapted to supply high-frequency power to the inside of the accommodating compartment; a DC electrode adapted to apply a DC voltage to the inside of the accommodating compartment, a ground electrode provided within the accommodating compartment and used for the applied DC voltage, and an exhaust unit adapted to evacuate the inside of the accommodating compartment. The plasma processing apparatus further comprises a shielding member disposed in the accommodating compartment so as to extend along the flow of exhaust gas, interpose between the flow of exhaust gas and the ground electrode, and form a cross-sectionally elongated groove-shaped space between the shielding member and the ground electrode. | 10-02-2008 |
20080236753 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a processing chamber; a high frequency electrode provided in the processing chamber; a high frequency power supply for applying a high frequency power to the high frequency electrode; a facing electrode attached to the processing chamber in an electrically floating state; and a facing ground potential portion provided around the facing electrode. The apparatus further includes an impedance controller for variably controlling an impedance of a high frequency power transmitting pass extending from the facing electrode to a ground potential; a processing gas supply unit for supplying a processing gas into a processing space between the high frequency electrode and the facing electrode, and the facing ground potential portion; and a dielectric plate arranged within the processing chamber for covering a surface of the facing ground potential portion. | 10-02-2008 |
20080257498 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a chamber | 10-23-2008 |
20090025877 | FLAT PANEL DISPLAY MANUFACTURING APPARATUS - Disclosed herein is a flat panel display manufacturing apparatus in a predetermined process is performed using plasma generated therein. In such a flat panel display manufacturing apparatus, a process gas is supplied into a chamber in an evenly diffused state to generate even plasma inside a symmetrical interior space of the chamber. Consequently, the flat panel display manufacturing apparatus can appropriately control flow rate of the plasma, thereby being capable of performing even processing on a large-scale substrate. In the flat panel display manufacturing apparatus, a substrate pedestal thereof is provided with a combination of vertical and horizontal shielding members, thereby being entirely protected from attack of the plasma, resulting in an increased life-span. | 01-29-2009 |
20090044909 | PLASMA PROCESSING APPARATUS - A conductive member | 02-19-2009 |
20090044910 | Plasma Processing Apparatus - This application discloses a practical plasma processing apparatus capable of plasma confinement without plasma-density non-uniformity and electric power loss. The apparatus comprises a plasma shield that surrounds a plasma generation region to prevent plasma from diffusing. The shield has at least one opening. The apparatus comprises a diffusion prevention electrode for preventing the plasma from diffusing through the opening of the plasma shield. The surface of the plasma shield exposed to the plasma is made of insulator. The diffusion prevention electrode is located where electrons diffusing toward the opening or having diffused through the opening from the plasma flow into itself. | 02-19-2009 |
20090165954 | ELECTRICALLY ENHANCING THE CONFINEMENT OF PLASMA - A vacuum plasma processor includes a chamber having a grounded wall and an outlet port. Plasma is excited at a first RF frequency in a chamber region spaced from the wall and outlet port. A. structure confines the plasma to the region while enabling gas to flow from the region to the outlet port. RF electric power at a second frequency connected to the confining structure causes the confining structure to be at a potential different from ground to increase the size of a sheath between the plasma and confining structure and increase the confining structure effectiveness. The region includes an electrode connected to ground by a circuit that is series resonant to the first frequency and includes capacitance of the sheath. | 07-02-2009 |
20090188627 | GAS MODULATION TO CONTROL EDGE EXCLUSION IN A BEVEL EDGE ETCHING PLASMA CHAMBER - The various embodiments provide apparatus and methods of removal of unwanted deposits near the bevel edge of substrates to improve process yield. The embodiments provide apparatus and methods with center and edge gas feeds as additional process knobs for selecting a most suitable bevel edge etching processes to push the edge exclusion zone further outward towards the edge of substrates. Further the embodiments provide apparatus and methods with tuning gas(es) to change the etching profile at the bevel edge and using a combination of center and edge gas feeds to flow process and tuning gases into the chamber. Both the usage of tuning gas and location of gas feed(s) affect the etching characteristics at bevel edge. Total gas flow, gap distance between the gas delivery plate and substrate surface, pressure, and types of process gas(es) are also found to affect bevel edge etching profiles. | 07-30-2009 |
20090236042 | SILENT DISCHARGE PLASMA APPARATUS - A silent discharge plasma apparatus includes a dielectric member, a pair of electrodes opposed to each other across the dielectric member and an alternating-current source applying an alternating-current voltage between the electrodes and causing a discharge. A gas is supplied to a discharge space, where discharge occurs, and a plasma is produced. At least one of the electrodes includes a conductive power feeding thin film on the dielectric member. When the dielectric member is destroyed and an arc discharge develops between the electrodes, the power feeding thin film is eliminated or oxidized, and the arc discharge is stopped. | 09-24-2009 |
20090236043 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a processing gas supplying unit for supplying a desired processing gas to a processing space between an upper electrode and a lower electrode which are disposed facing each other in an evacuable processing chamber. The plasma processing apparatus further includes a radio frequency (RF) power supply unit for applying an RF power to one of the lower and the upper electrode to generate plasma of the processing gas by RF discharge and an electrically conductive RF ground member which covers a periphery portion of the electrode to which the RF power is applied to receive RF power emitted outwardly in radial directions from the periphery portion of the electrode to which the RF power is applied and send the received RF power to a ground line. | 09-24-2009 |
20090242132 | PLASMA PROCESSING APPARATUS AND FEEDER ROD USED THEREIN - A feeder rod that transmits radio-frequency power via a matcher to a susceptor used in plasma generation that is disposed inside a processing chamber where a wafer undergoes a predetermined type of plasma processing, includes as an integrated part thereof electrical characteristics measurement probes. The integrated feeder rod unit can be detachably installed as a whole between the matcher and the processing chamber. | 10-01-2009 |
20090255630 | Substrate processing apparatus and electrode member - Disclosed is a substrate processing apparatus, including: a reaction chamber to process a substrate; a substrate placing member to stack a plurality of substrates thereon in multi-layers at a predetermined distance from one another in the reaction chamber; an introducing section to introduce processing gas into the reaction chamber; an exhaust section to exhaust an inside of the reaction chamber; and a plurality of pairs of comb electrodes, to which alternating current electric power is to be applied, to generate plasma, the plurality of pairs of comb electrodes being disposed in the reaction chamber, wherein each pair of the plurality of pairs of comb electrodes are disposed at a predetermined distance from each of plasma processing faces of the plurality of the substrates to be placed on the substrate placing member. | 10-15-2009 |
20090255631 | Plasma Processing Apparatus and the Upper Electrode Unit - In a plasma processing apparatus that executes plasma processing on a semiconductor wafer placed inside a processing chamber by generating plasma with a processing gas supplied through a gas supply hole at an upper electrode (shower head) disposed inside the processing chamber, an interchangeable insert member is inserted at a gas passing hole at a gas supply unit to prevent entry of charged particles in the plasma generated in the processing chamber into the gas supply unit. This structure makes it possible to fully prevent the entry of charged particles in the plasma generated inside the processing chamber into the gas supply unit. | 10-15-2009 |
20090260763 | PLASMA PROCESSING WITH PREIONIZED AND PREDISSOCIATED TUNING GASES AND ASSOCIATED SYSTEMS AND METHODS - Plasma processing systems and methods for using pre-dissociated and/or pre-ionized tuning gases are disclosed herein. In one embodiment, a plasma processing system includes a reaction chamber, a support element in the reaction chamber, and one or more cathode discharge assemblies in the reaction chamber. The reaction chamber is configured to produce a plasma in an interior volume of the chamber. The support element positions a microelectronic workpiece in the reaction chamber, and the cathode discharge assembly supplies an at least partially dissociated and/or ionized tuning gas to the workpiece in the chamber. | 10-22-2009 |
20090266488 | Plasma Processing Apparatus - A plasma processing apparatus includes a stage which is a lower electrode, an upper electrode which is a counter electrode for the lower electrode, and a processing chamber in which the lower and the upper electrodes are placed. The apparatus supplies a gas to a plasma generation space located between the lower and the upper electrodes to generate a plasma so that a processing object is subjected to plasma processing. In the apparatus, the upper electrode is formed up of a body portion having a gas supply port, a gas-permeable porous plate located on the underside of the body portion so as to close the gas supply port, and a support member for supporting the outer edge portion of the porous plate. Slits for absorption of strain due to thermal expansion in the plasma processing are formed at a pitch in the outer edge portion of the porous plate. | 10-29-2009 |
20090301657 | PLASMA PROCESSING SYSTEMS WITH MECHANISMS FOR CONTROLLING TEMPERATURES OF COMPONENTS - A plasma processing system with improved component temperature control is disclosed. The system may include a plasma processing chamber having a chamber wall. The system may also include an electrode disposed inside the plasma processing chamber. The system may also include a support member disposed inside the plasma processing chamber for supporting the electrode. The system may also include a support plate disposed outside the chamber wall. The system may also include a cantilever disposed through the chamber wall for coupling the support member with the support plate. The system may also include a lift plate disposed between the chamber wall and the support plate. The system may also include thermally resistive coupling mechanisms for mechanically coupling the lift plate with the support plate. | 12-10-2009 |
20090321018 | PERIPHERALLY ENGAGING ELECTRODE CARRIERS AND ASSEMBLIES INCORPORATING THE SAME - In accordance with one embodiment of the present disclosure, an assembly is provided comprising a multi-component electrode and a peripherally engaging electrode carrier. The peripherally engaging electrode carrier comprises a carrier frame and a plurality of reciprocating electrode supports. The multi-component electrode is positioned in the electrode accommodating aperture of the carrier frame. The backing plate of the electrode comprises a plurality of mounting recesses formed about its periphery. The reciprocating electrode supports can be reciprocated into and out of the mounting recesses. Additional embodiments of broader and narrower scope are contemplated. | 12-31-2009 |
20100000684 | Dry etching apparatus - A dry etching apparatus is disclosed, which is capable of forming a uniform pattern in a substrate surface, the dry etching apparatus for etching at least one substrate through the use of plasma, comprising the at least one substrate placed on a tray inside a chamber; a susceptor, provided inside the chamber while confronting with the at least one substrate, for supplying a high-frequency power to form the plasma; a grounding part provided beneath the susceptor while being untouchable to the susceptor; and an insulating part provided between the susceptor and the grounding part. | 01-07-2010 |
20100078129 | MOUNTING TABLE FOR PLASMA PROCESSING APPARATUS - A mounting table for use in a plasma processing apparatus, on which a substrate is mounted, includes: an inner conductive member connected to an ion attracting RF power supply; an outer conductive member connected to a plasma generating RF power supply, the outer conductive member surrounding the inner conductive member; and a partition member formed of a dielectric material, the partition member partitioning between the inner conductive member and the outer conductive member. Further, the mounting table includes an electrostatic chuck formed of a dielectric material and arranged between the substrate and the inner conductive member, and between the substrate and the outer conductive member; and a dielectric layer arranged between the electrostatic chuck and the inner conductive member to conceal the inner conductive member from the electrostatic chuck. The electrostatic chuck includes an electrode film that is connected to a high voltage DC power supply. | 04-01-2010 |
20100116437 | PLASMA PROCESSING APPARATUS AND CONSTITUENT PART THEREOF - A constituent part is included in a plasma processing apparatus for performing a plasma process on a substrate mounted on a susceptor by using a plasma generated in a processing chamber. The constituent part has at least one recessed corner formed by intersection of two surfaces. The recessed corner is exposed to the plasma when the plasma is generated in the processing chamber. An intersection angle of the two surfaces seen from a plasma side is 115 degrees to 180 degrees. | 05-13-2010 |
20100126667 | CAPACITIVE CVD REACTOR AND METHODS FOR PLASMA CVD PROCESS - A decoupled capacitive CVD reactor is described, which provides improved CVD capabilities, including processing at lower temperatures, performing alternating deposition and etching steps, and performing in situ cleaning of the chamber, without the need for a remote plasma source. Two RF frequencies are coupled to the susceptor, while the anode is grounded. The high frequency RF source is operated so as to control the plasma density, while the low frequency RF source is operated to control species bombardment on the substrate, so as to control the properties of the film being deposited. Additionally, both RF sources may be controlled, together with selection of gasses supplied to the chamber, to operate the chamber either in deposition mode, partial etch mode, etching mode, or cleaning mode. | 05-27-2010 |
20100139863 | VOLTAGE NON-UNIFORMITY COMPENSATION METHOD FOR HIGH FREQUENCY PLASMA REACTOR FOR THE TREATMENT OF RECTANGULAR LARGE AREA SUBSTRATES - A vacuum vessel and at least two electrodes define an internal process space. At least one power supply is connectable with the electrodes. A substrate holder holds a substrate to be treated in the internal process space. At least one of the electrodes has along a first cross section a concave profile and has along a second cross section a convex profile, the first cross section being parallel to the second cross section. Gas is provided to the space through a gas inlet. Power is provided to the electrodes and the substrate is treated. | 06-10-2010 |
20100181025 | APPARATUS FOR THE REMOVAL OF A FLUORINATED POLYMER FROM A SUBSTRATE - An apparatus generating a plasma for removing fluorinated polymer from a substrate is provided. The apparatus includes a powered electrode assembly, which includes a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The apparatus also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated. The first wire mesh is shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, which has an outlet at one end for providing the plasma to remove the fluorinated polymer. | 07-22-2010 |
20100212832 | STAGE DEVICE AND PLASMA TREATMENT APPARATUS - The present invention provides a stage device which does not generate the difference in level between an upper end of a lift pin and a setting surface of a stage in a state where a substrate to be treated is set on the setting surface of the stage, and provides a plasma treatment apparatus which suppresses the occurrence of uneven treatment by using the stage device as an electrode stage. At the center of an electrode stage ( | 08-26-2010 |
20100212833 | Apparatus for Etching Edge of Wafer - An apparatus for etching an edge of a wafer includes a chamber, a chuck disposed inside the chamber upon which the wafer is disposed, a plate spaced apart from the wafer and disposed above the wafer, and an edge ring formed along the edge of the wafer and combined with an outer periphery of the plate, wherein the edge ring comprises a ring base spaced a distance apart from the wafer to form a parallel plane with respect to the wafer, and a first ring protrusion protruding from the ring base to insulate the edge of the wafer from a central region of the wafer. | 08-26-2010 |
20100218896 | Atmospheric pressure plasma reactor - An atmospheric pressure plasma reactor includes a high-voltage electrode, a common grounded electrode, a bias electrode and at least one dielectric layer. The high-voltage electrode is connected to a high-voltage power supply. The common grounded electrode is used with the high-voltage electrode to discharge and therefore produce planar atmospheric plasma from reactive gas. The bias electrode is used to generate bias for attracting the ions of the planar atmospheric pressure plasma. The dielectric layer is used to suppress undesirable arc discharge during the discharging. | 09-02-2010 |
20100243167 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus includes: a cylindrical shaped chamber configured to accommodate a substrate; a movable electrode capable of moving along a central axis of the cylindrical shaped chamber within the cylindrical shaped chamber; a facing electrode facing the movable electrode within the cylindrical shaped chamber; and an expansible/contractible partition wall connecting the movable electrode with an end wall on one side of the cylindrical shaped chamber. In the substrate processing apparatus, a high frequency power is applied to a first space between the movable electrode and the facing electrode, a processing gas is introduced thereto, and the movable electrode is not in contact with a sidewall of the cylindrical shaped chamber. At least one low dielectric member is provided in a second space between the movable electrode and the end wall on one side of the cylindrical shaped chamber. | 09-30-2010 |
20100314047 | Etching System - An etching system. An etching chamber includes an exhaust port. A gas input pipe is connected to the etching chamber, inputting etching process gas thereinto. A top RF electrode is disposed above the etching chamber. A bottom RF electrode is disposed under the etching chamber and opposite the top RF electrode. The etching process gas is transformed into plasma by operation of the top and bottom RF electrodes. An exhaust pump is connected to the exhaust port, expelling the plasma from the etching chamber. A base is disposed in the etching chamber. A focus ring is disposed on the base, accommodating a wafer. The wafer is etched by the plasma. A barricade is disposed on the focus ring and corresponds to the exhaust port, regulating the plasma flowing through the wafer. | 12-16-2010 |
20110005685 | PLASMA REACTOR WITH UNIFORM PROCESS RATE DISTRIBUTION BY IMPROVED RF GROUND RETURN PATH - In a plasma reactor having an RF plasma source power applicator at its ceiling, an integrally formed grid liner includes a radially extending plasma confinement ring and an axially extending side wall liner. The plasma confinement ring extends radially outwardly near the plane of a workpiece support surface from a pedestal side wall, and includes an annular array of radial slots, each of the slots having a narrow width corresponding to an ion collision mean free path length of a plasma in the chamber. The side wall liner covers an interior surface of the chamber side wall and extends axially from a height near a height of said workpiece support surface to the chamber ceiling. | 01-13-2011 |
20110011534 | APPARATUS FOR ADJUSTING AN EDGE RING POTENTIAL DURING SUBSTRATE PROCESSING - An apparatus for performing ion incident angle control while processing a substrate within a processing chamber is provided. The apparatus includes an edge ring surrounding the substrate disposed on a lower electrode, wherein the edge ring is electrically isolated from the lower electrode. The edge ring receives a first voltage from an edge ring direct current (DC) voltage control arrangement, resulting in an edge ring potential. The apparatus also includes a radio frequency source that provides power to the lower electrode and a gas distribution system that delivers gases into the processing chamber to interact with power to generate plasma to process the substrate. During processing, the edge ring DC voltage control arrangement is adjusted to cause the edge ring potential to be higher than the DC potential on the substrate, thereby causing the plasma to have a non-uniform angular ion distribution profile for processing the substrate edge. | 01-20-2011 |
20110030899 | PLASMA PROCESSING APPARATUS USING TRANSMISSION ELECTRODE - At least a part of a discharging electromagnetic wave is introduced into a processing chamber via a transmission electrode which has characteristics to behave as a dielectric (electric insulator) for the discharging electromagnetic wave, and to behave as a material with electric conductivity for RF bias electromagnetic wave of electromagnetic wave of ion plasma oscillation. | 02-10-2011 |
20110042009 | PLASMA ETCHING DEVICE - A plasma etching device is provided. The device includes a chamber, a cathode assembly, and an integral cathode liner. The chamber provides a plasma reaction space. The cathode assembly is positioned at an inner and central part of the chamber and supports a substrate. The integral cathode liner has a plurality of first vents and second vents formed at two levels and spaced apart respectively such that the uniformity of a gas flow and exhaust flow within the chamber is maintained, and is outer inserted to the cathode assembly and coupled at its lower end part to an inner surface of the chamber. | 02-24-2011 |
20110100556 | Plasma System with Injection Device - A plasma system with an injection device is provided. The plasma system comprises a plasma cavity and an injection device. The plasma cavity comprises a first electrode and a second for generating plasma. The injection device comprises a plasma injection tube and at least a reactant injection tube. The plasma injection tube is connected to the plasma cavity. The plasma injection tube comprises an inlet, an outlet and an outer sidewall. The plasma injection tube injects the plasma from the inlet and guides the plasma out through the outlet. The outer sidewall has a width decreasing from the inlet to the outlet. The reactant injection tube is disposed outside of the outer sidewall. The reactant injection tube injects a reactant to the outer sidewall so that the reactant flows along the outer sidewall toward the outlet and mixes with the plasma at the outlet. | 05-05-2011 |
20110146910 | PLASMA PROCESSING APPARATUS - Uniformity of a process on a substrate is improved. A plasma processing apparatus including a processing container which is formed of metal and receives a substrate to be plasma-processed, an electromagnetic wave source which supplies an electromagnetic wave required to excite plasma in the processing container, and a plurality of dielectrics, through which the electromagnetic wave supplied from the electromagnetic wave source transmits to the inside of the processing container and which have a part that is exposed to the inside of the processing container, on a lower surface of a lid of the processing container, wherein a metal electrode, which is electrically connected to the lid, is formed on a lower surface of each dielectric, a part of each dielectric exposed between the lower surface of the lid and the metal electrode has a substantially polygonal outline when viewed from the inside of the processing container, the plurality of dielectrics are disposed with vertical angles of the polygonal outlines being adjacent to each other, and a surface wave propagating portion, through which the electromagnetic wave is propagated, is formed on the lower surface of the lid exposed inside the processing container and a lower surface of the metal electrode. | 06-23-2011 |
20110162801 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus ( | 07-07-2011 |
20110220289 | MEMBER FOR PLASMA TREATMENT APPARATUS AND PRODUCTION METHOD THEREOF - A member for a plasma treatment apparatus is provided, which has excellent anti-sticking properties, is suitable, for example, as a lower electrode in CVD apparatuses, has a stable shape as the lower electrode, and can suppress abnormal discharge during plasma treatment. The member for a plasma treatment apparatus comprises a base material formed of an aluminum alloy having a smoothly machined surface and a treated anodic oxide coating provided on the surface of the base material and formed by hydrating an anodic oxide coating formed on the surface of the base material to form microcracks therein. The anodic oxide coating has a leak current density of more than 0.9×10 | 09-15-2011 |
20110253312 | GAS MODULATION TO CONTROL EDGE EXCLUSION IN A BEVEL EDGE ETCHING PLASMA CHAMBER - The various embodiments provide apparatus and methods of removal of unwanted deposits near the bevel edge of substrates to improve process yield. The embodiments provide apparatus and methods with center and edge gas feeds as additional process knobs for selecting a most suitable bevel edge etching processes to push the edge exclusion zone further outward towards the edge of substrates. Further the embodiments provide apparatus and methods with tuning gas(es) to change the etching profile at the bevel edge and using a combination of center and edge gas feeds to flow process and tuning gases into the chamber. Both the usage of tuning gas and location of gas feed(s) affect the etching characteristics at bevel edge. Total gas flow, gap distance between the gas delivery plate and substrate surface, pressure, and types of process gas(es) are also found to affect bevel edge etching profiles. | 10-20-2011 |
20110272100 | PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD, FOCUS RING, AND FOCUS RING COMPONENT - When a substrate to be processed placed on a mounting table disposed in a process chamber is processed by plasma generated in the process chamber by application of high-frequency voltage, an electric field causing ions generated by the plasma to accelerate toward a lower surface of a peripheral edge portion of the substrate to be processed placed on the mounting table is formed under the peripheral edge portion of the substrate to be processed, and the ions consequently collide with the lower surface of the peripheral edge portion, which reduces the occurrence of deposition. | 11-10-2011 |
20120000608 | C-SHAPED CONFINEMENT RING FOR A PLASMA PROCESSING CHAMBER - Described herein is a confinement ring useful as a component of a capacitively-coupled plasma processing chamber. Inner surfaces of the confinement ring provide an extended plasma confinement zone surrounding a gap between an upper electrode and a lower electrode on which a semiconductor substrate is supported during plasma processing in the chamber. | 01-05-2012 |
20120006489 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - Substrates are contained in substrate containing holes which penetrate a tray in the thickness direction. A dielectric plate in a chamber is provided with a tray supporting surface which supports the lower surface of the tray and substrate placing sections which protrude upward, and has an electrostatic chuck electrode therein. The substrate supporting section which supports the substrate contained in the substrate containing holes is provided with a plurality of protruding sections formed at intervals in the circumferential direction of the substrate containing holes. The substrates are supported in point-contact mode by means of the protruding sections. | 01-12-2012 |
20120132368 | PLASMA TREATMENT APPARATUS - To improve durability of an electric discharge part of a dielectric barrier discharge system, a plasma treatment apparatus is configured so that a plasma source of a corona discharge system is installed in the vicinity of a plasma source of the dielectric barrier discharge system, a plasma generated by corona discharge is used as an auxiliary plasma, and a discharge sustaining voltage of a main plasma generated by the dielectric barrier discharge is reduced. | 05-31-2012 |
20120193030 | SILICON ELECTRODE PLATE FOR PLASMA ETCHING - [Problems] To provide a silicon electrode plate for plasma etching that suppresses the unevenness of the surface caused by plasma etching so as to ensure uniform etching. | 08-02-2012 |
20120241091 | RF POWER DELIVERY SYSTEM IN A SEMICONDUCTOR APPARATUS - Embodiments of the invention provide an apparatus which provide good RF uniformity within a processing chamber. In one embodiment, an apparatus includes a substrate support assembly, a terminal, and a dielectric insulator. The substrate support assembly has a center passage formed along a center axis. An RF transmission line is provided. The RF transmission line has a substantially vertical portion and a substantially horizontal portion, wherein the terminal is coupled to the substantially horizontal portion of the RF transmission line. The dielectric insulator circumscribes the substantially horizontal portion of the RF transmission line. The dielectric insulator has a first opening through which the terminal passes. | 09-27-2012 |
20120291954 | ELECTRODE ORIENTATION AND PARALLELISM ADJUSTMENT MECHANISM FOR PLASMA PROCESSING SYSTEMS - A mechanism for adjusting an orientation of an electrode in a plasma processing chamber is disclosed. The plasma processing chamber may be utilized to process at least a substrate, which may be inserted into the plasma processing chamber in an insertion direction. The mechanism may include a support plate disposed outside a chamber wall of the plasma processing chamber and pivoted relative to the chamber wall. The support plate may have a first thread. The mechanism may also include an adjustment screw having a second thread that engages the first thread. Turning the adjustment screw may cause translation of a portion of the support plate relative to the adjustment screw. The translation of the portion of the support plate may cause rotation of the support plate relative to the chamber wall, thereby rotating the electrode with respect to an axis that is orthogonal to the insertion direction. | 11-22-2012 |
20130020027 | ETCHING EQUIPMENT - An etching equipment including a stage, a plasma generator, a center electrode, and a peripheral electrode is provided. The work-piece is mounted on the mounting surface of the stage. The plasma generator generates plasma above the stage, wherein the plasma generator generates plasma at a higher concentration around a center axis of the mounting surface than on the center axis. The center electrode is disposed at a lower side of a space in which the plasma generator generates plasma and at a position through which the center axis passes. The center electrode is configured capable of controlling a potential of the center electrode. The peripheral electrode is disposed at an upper side of the stage and a lower side of the center electrode, wherein the peripheral electrode extends along a periphery of the center electrode. The peripheral electrode is configured capable of controlling a potential of the peripheral electrode. | 01-24-2013 |
20130087286 | SYMMETRIC PLASMA PROCESS CHAMBER - Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems. | 04-11-2013 |
20130105087 | SOLAR WAFER ELECTROSTATIC CHUCK | 05-02-2013 |
20130133833 | Symmetric RF Return Path Liner - An apparatus and system for plasma processing a substrate using RF power includes a chamber having walls for housing an electrostatic chuck (ESC) and a top electrode. The top electrode is oriented opposite the ESC to define a processing region. An inner line with a tubular shaped wall is defined within and is spaced apart from the walls of the chamber and is oriented to surround the processing region. The tubular shaped wall extends a height between a top and a bottom. The tubular shaped wall has functional openings for substrate access and facilities access and dummy openings oriented to define symmetry for selected ones of the functional openings. A plurality of straps are connected to the bottom of the tubular shaped wall of the inner liner and are electrically coupled to a ground ring within the chamber to provide an RF power return path during plasma processing. | 05-30-2013 |
20130174984 | REACTIVE-SPECIES SUPPLY DEVICE AND SURFACE TREATMENT APPARATUS - A reactive-species supply device is configured to supply a treatment gas to an electric discharge space, for thereby supplying at least a reactive species formed in a plasma, to an object. The reactive-species supply device includes (a) at least one pair of electrodes configured to form the electric discharge space and (b) an electrode protection device configured to protect the electrodes from the treatment gas. Also disclosed is a surface treatment apparatus that includes the reactive-species supply device. | 07-11-2013 |
20130240146 | PLASMA APPARATUS AND METHOD FOR PRODUCING THE SAME - [Object] To provide a plasma apparatus capable of igniting plasma reliably over a long period. | 09-19-2013 |
20130276984 | COATING APPARATUS HAVING A HIPIMS POWER SOURCE - A coating apparatus having a vacuum chamber, a plurality of cathodes arranged therein and also a HIPIMS power source, characterized in that in addition to at least one coating cathode which can be operated with the HIPIMS power source a plurality of etching cathodes is provided which are smaller in area in comparison to the coating cathode, with the etching cathodes being connectable in a predetermined or predeterminable sequence to the HIPIMS power source. | 10-24-2013 |
20140048209 | IGNITION APPARATUS FOR ARC SOURCES - The present invention relates to an ignition device for igniting a high-current discharge of an electrical arc evaporator in a vacuum coating system. Ignition is performed by means of mechanically closing and opening a contact between the cathode and the anode. Contact is established by means of an ignition finger that can move on a forced path. On account of the forced path, the ignition finger can be moved by means of a simple mechanical drive to a park position, which is protected against coating, and said ignition finger can also be used to ignite a second target. | 02-20-2014 |
20140053984 | SYMMETRIC RETURN LINER FOR MODULATING AZIMUTHAL NON-UNIFORMITY IN A PLASMA PROCESSING SYSTEM - Methods and apparatus for modulating azimuthal non-uniformity in a plasma processing chamber are disclosed. Apparatus includes a plasma processing system having a plasma processing chamber and a chamber liner. Modulating the azimuthal non-uniformity includes providing a set of conduction straps to connect the chamber liner to a ground ring whereby the number of conduction straps in the set of conduction straps is greater than 8. Alternatively or additionally, a mirror cut-out is provided for a counterpart existing cut-out or port in the chamber liner. Alternatively or additionally, a dummy structure is provided with the chamber liner for a counterpart structure that impedes at least one of a gas flow and RF return current in the chamber. | 02-27-2014 |
20140060739 | RF GROUND RETURN IN PLASMA PROCESSING SYSTEMS AND METHODS THEREFOR - Methods and apparatus for operating the plasma processing chamber of a plasma processing tool in at least two modes are disclosed. In the first mode, the substrate-bearing assembly is movable within a gap-adjustable range to adjust the gap between the electrodes to accommodate different processing requirements. In this first mode, RF ground return path continuity is maintained irrespective of the gap distance as long as the gap distance is within the gap-adjustable range. In the second mode, the substrate bearing assembly is capable of moving to further open the gap to accommodate unimpeded substrate loading/unloading. | 03-06-2014 |
20140352890 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus includes: a cylindrical shaped chamber configured to accommodate a substrate; a movable electrode capable of moving along a central axis of the cylindrical shaped chamber within the cylindrical shaped chamber; a facing electrode facing the movable electrode within the cylindrical shaped chamber; and an expansible/contractible partition wall connecting the movable electrode with an end wall on one side of the cylindrical shaped chamber. A high frequency power is applied to a first space between the movable electrode and the facing electrode, a processing gas is introduced thereto, and the movable electrode is not in contact with a sidewall of the cylindrical shaped chamber, a first dielectric member is provided at the cylindrical shaped chamber's sidewall facing the movable electrode, and an overlap area between the first dielectric member and a side surface of the movable electrode is changed according to movement of the movable electrode. | 12-04-2014 |
20150336798 | DEVICES FOR CARBON NANOTUBE LENGTH CONTROL - A method for manufacturing a carbon nanotube (CNT) of a predetermined length is disclosed. The method includes generating an electric field to align one or more CNTs and severing the one or more aligned CNTs at a predetermined location. The severing each of the aligned CNTs may include etching the predetermined location of the one or more aligned CNTs and applying a voltage across the one or more etched CNTs. | 11-26-2015 |