Class / Patent application number | Description | Number of patent applications / Date published |
156345380 | With multiple gas energizing means associated with one workpiece etching | 15 |
20080236750 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a processing chamber, a first electrode and a second electrode attached to the processing chamber via an insulator. To generate a plasma of a processing gas in the processing space, a high frequency power supply unit applies to the first electrode a high frequency power having a predetermined high frequency. Further, to control energy of incident ions on the first and the second electrode from the plasma, a first low frequency power supply unit applies to the first electrode a first low frequency power having the frequency lower than the frequency of the high frequency power, and a second low frequency power supply unit applies to the second electrode a second low frequency power having the frequency lower than the frequency of the high frequency power. | 10-02-2008 |
20080277064 | PLASMA PROCESSING APPARATUS - There is provided a plasma processing apparatus including: a chamber; an insulating plate provided in an upper region in the chamber; a ground electrode provided on a sidewall of the chamber and supplied with a ground voltage; and a lower electrode provided in a lower region in the chamber on which a substrate is seated, wherein the lower electrode comprises a plurality of electrodes, and an RF voltage and the ground voltage are alternately supplied to the adjacent two electrodes, respectively. | 11-13-2008 |
20090056875 | Enhanced stripping of low-K films using downstream gas mixing - The present invention pertains to methods for removing unwanted material from a work piece. More specifically, the invention pertains to stripping photo-resist material and removing etch-related residues from a semiconductor wafer during semiconductor manufacturing. Methods involve implementing a hydrogen plasma operation with downstream mixing with an inert gas. The invention is effective at stripping photo-resist and removing residues from low-k dielectric material used in Damascene devices. | 03-05-2009 |
20110174441 | PLASMA PROCESSING APPARATUS - Provided is a plasma processing apparatus wherein an electrode embedded in a mounting table is supplied with high frequency power for biasing. A surface, which is exposed to plasma and is of an aluminum cover functioning as an opposite electrode to the electrode of the mounting table, is coated with a protection film, preferably a Y | 07-21-2011 |
20110214815 | PLASMA PROCESSING APPARATUS AND METHOD - An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency, and a second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber to generate plasma of the process gas so as to perform plasma etching. | 09-08-2011 |
20110259524 | CAPACITIVE COUPLING PLASMA PROCESSING APPARATUS AND METHOD FOR USING THE SAME - A plasma processing apparatus includes a process container configured to accommodate a target substrate and to be vacuum-exhausted. A first electrode and a second electrode are disposed opposite each other within the process container. The first electrode includes an outer portion and an inner portion both facing the second electrode such that the outer portion surrounds the inner portion. An RF power supply is configured to apply an RF power to the outer portion of the first electrode. A DC power supply is configured to apply a DC voltage to the inner portion of the first electrode. A process gas supply unit is configured to supply a process gas into the process container, wherein plasma of the process gas is generated between the first electrode and the second electrode. | 10-27-2011 |
20110303364 | PLASMA PROCESSING APPARATUS - A microwave plasma processing apparatus includes: a processing container wherein a gas is excited by microwaves and a substrate is plasma-processed; a microwave source which outputs microwaves; a transmission line through which the microwaves output from the microwave source are transmitted; a plurality of dielectric plates which are arranged on an inner surface of the processing container and emit the microwaves into the processing container; a plurality of first coaxial waveguides which are adjacent to the dielectric plates and through which the microwaves are transmitted to the dielectric plates; and a coaxial waveguide distributor which distributes and transmits the microwaves transmitted through the transmission line to the first coaxial waveguides. The coaxial waveguide distributor includes a second coaxial waveguide which has an input portion and 2 types of branched structures which are connected to the first coaxial waveguides and have different configurations. | 12-15-2011 |
20120037315 | CAPACITIVE COUPLING PLASMA PROCESSING APPARATUS - A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the chamber. In the chamber, a first electrode and a second electrode are disposed opposite each other. The second electrode includes a plurality of conductive segments separated from each other and facing the first electrode. An RF power supply is configured to apply an RF power to the first electrode to form an RF electric field within a plasma generation region between the first and second electrodes, so as to turn the process gas into plasma by the RF electric field. A DC power supply is configured to apply a DC voltage to at least one of the segments of the second electrode. | 02-16-2012 |
20120061022 | PLASMA TEXTURING REACTION APPARATUS - A plasma texturing reaction apparatus includes a chamber including a dielectric window and a chamber body and receiving a solar cell wafer to be textured, and a polygonal induction coil provided at an outer upper portion of the dielectric window to generate a magnetic field for generating plasma, a high frequency low power supply unit that supplies a cathode of the chamber with high frequency power corresponding to process conditions, and a high frequency source power supply unit that supplies the polygonal induction coil with high frequency power. | 03-15-2012 |
20120160418 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes: a radio frequency (RF) power source which applies an RF power to a lower electrode; a direct current (DC) power source which applies a DC voltage to an upper electrode; a ground member for the DC voltage that is a ring shape formed of a conductive material, that is arranged in the processing chamber such that at least a part of the ground member is exposed to the processing space, and that forms a ground potential with respect to the DC voltage applied to the upper electrode; and a plurality of vertical movement mechanisms which move the ground member for the DC voltage in a vertical direction to adjust a grounding state of the ground member for the DC voltage. | 06-28-2012 |
20120186746 | PLASMA ETCHING APPARATUS - A plasma etching apparatus includes a magnetic field forming section, which has concentrically disposed magnetic field coils at least at three levels, and which forms, on the inner side of the magnetic field coil at the intermediate level, an annular zero magnetic field region along the circumferential direction of the magnetic field coils. A chamber main body including the top portion is interpolated on the inner side of the magnetic field coils and houses the substrate below the zero magnetic field region. A gas supply section supplies an etching gas to the inside of the chamber main body. A high frequency antenna forms an induction electric field in the zero magnetic field region and generates plasma of the etching gas. An electrode is disposed above the top portion of the chamber main body, and is electrostatically coupled with the plasma generated in the chamber main body. | 07-26-2012 |
20130025788 | Distributed, Non-Concentric Multi-Zone Plasma Source Systems, Methods and Apparatus - A processing chamber including multiple plasma sources in a process chamber top. Each one of the plasma sources is a ring plasma source including a primary winding and multiple ferrites. A plasma processing system is also described. A method of plasma processing is also described. | 01-31-2013 |
20130105086 | HIGH EFFICIENCY TRIPLE-COIL INDUCTIVELY COUPLED PLASMA SOURCE WITH PHASE CONTROL | 05-02-2013 |
20160071703 | Method for Increasing Adhesion of Copper to Polymeric Surfaces - Disclosed herein are methods and systems for conditioning a polymeric layer on a substrate to enable adhesion of a metal layer to the polymeric layer. Techniques may include conditioning the polymeric layer with nitrogen-containing plasma to generate a nitride layer on the surface of the polymeric layer. In another embodiment, the conditioning may include depositing a CuN layer using a lower power copper sputtering process in a nitrogen rich environment. Following the condition process, a higher power copper deposition or sputtering process may be used to deposit copper onto the polymeric layer with good adhesion properties. | 03-10-2016 |
20160104606 | SYSTEMS AND METHODS FOR INTERNAL SURFACE CONDITIONING ASSESSMENT IN PLASMA PROCESSING EQUIPMENT - In an embodiment, a plasma source includes a first electrode, configured for transfer of one or more plasma source gases through first perforations therein; an insulator, disposed in contact with the first electrode about a periphery of the first electrode; and a second electrode, disposed with a periphery of the second electrode against the insulator such that the first and second electrodes and the insulator define a plasma generation cavity. The second electrode is configured for movement of plasma products from the plasma generation cavity therethrough toward a process chamber. A power supply provides electrical power across the first and second electrodes to ignite a plasma with the one or more plasma source gases in the plasma generation cavity to produce the plasma products. One of the first electrode, the second electrode and the insulator includes a port that provides an optical signal from the plasma. | 04-14-2016 |