Class / Patent application number | Description | Number of patent applications / Date published |
156345290 | With etchant gas supply or exhaust structure located outside of etching chamber (e.g., supply tank, pipe network, exhaust pump, particle filter) | 79 |
20080210377 | UNIFORM ETCH SYSTEM - Etching a layer over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to the outer zone within the plasma processing chamber, where the outer zone surrounds the inner zone and the first gas is different than the second gas. Plasmas are simultaneously generated from the first gas and second gas. The layer is etched, where the layer is etched by the plasmas from the first gas and second gas. | 09-04-2008 |
20080216957 | PLASMA PROCESSING APPARATUS, CLEANING METHOD THEREOF, CONTROL PROGRAM AND COMPUTER STORAGE MEDIUM - A cleaning method for a plasma processing apparatus includes introducing a cleaning gas containing Cl | 09-11-2008 |
20080245478 | Surface treatment apparatus - A surface treatment apparatus encompasses a gas introducing system configured to introduce a process gas from downstream end of a tubular treatment object; a vacuum evacuating system configured to evacuate the process gas from other end of the treatment object; an excited particle supplying system disposed at upstream side of the treatment object, configured to supply excited particles for inducing initial discharge in a main body of the treatment object; and a first main electrode and a second main electrode disposed oppositely to each other, defining a treating region of the treatment object as a main plasma generating region disposed therebetween, wherein the excited particle supplying system is driven at least until generation of main plasma, and main pulse of duty ratio of 10 | 10-09-2008 |
20080257497 | DEVICE FOR MANUFACTURING A SILICON STRUCTURE, AND MANUFACTURING METHOD THEREOF - A process for manufacturing a hollow silicon structure is simplified. A device for manufacturing the silicon structure is a device that manufactures the hollow silicon structure by processing a silicon structure, the silicon structure consisting of a silicon oxide layer formed on a silicon substrate, the silicon oxide layer being covered by a silicon layer. The device is provided with first gas supply members | 10-23-2008 |
20080277063 | Apparatus for treating substrate using plasma - The, present invention is directed to an apparatus for treating a substrate using plasma. To improve plasma characteristics, magnetic units are provided for supplying a magnetic field. A first magnet unit is provided at an upper region among a lateral portion of a housing, and a second magnet unit is provided at a lower portion. Each of the magnet units includes a plurality of electromagnets disposed to exhibit the shape of a regular polygon, when viewed from the upside. An underlying magnet unit is disposed to rotate on its axis at a predetermined angle from a position of alignment with an overlying magnet. According to the above configuration, a uniformity of plasma inside the housing is improved and, especially, it is possible to prevent plasma uniformity from decreasing at a region between adjacent electromagnets. | 11-13-2008 |
20080289765 | PLASMA PROCESSING APPARATUS - The invention provides a means for suppressing interference phenomenon on the surface of a sample to be processed that deteriorates the detection accuracy upon detecting the time variation of plasma conditions such as plasma space distribution or the processing status of the sample to be processed. A light scattering element (light transmitting means) | 11-27-2008 |
20090014127 | SYSTEMS FOR PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION AND BEVEL EDGE ETCHING - Embodiments described herein relate to a substrate processing system that integrates substrate edge processing capabilities. Illustrated examples of the processing system include, without limitations, a factory interface, a loadlock chamber, a transfer chamber, and one or more twin process chambers having two or more processing regions that are isolatable from each other and share a common gas supply and a common exhaust pump. The processing regions in each twin process chamber include separate gas distribution assemblies and RF power sources to provide plasma at selective regions on a substrate surface in each processing region. Each twin process chamber is thereby configured to allow multiple, isolated processes to be performed concurrently on at least two substrates in the processing regions. | 01-15-2009 |
20090065146 | PLASMA PROCESSING APPARATUS - Gas delivery ports | 03-12-2009 |
20090126871 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a vacuum evacuable processing chamber; a first electrode for mounting thereon a substrate to be processed in the processing chamber; a second electrode facing the first electrode in parallel in the processing chamber; and a processing gas supply unit for supplying a processing gas to a processing space between the first and the second electrode. The apparatus further includes a first high frequency power supply for applying a first high frequency power for generating a plasma of the processing gas to at least one of the first and the second electrode; and a cavity plasma generation unit, having a cavity formed in one of the first and the second electrode, for generating a plasma of a discharging gas in the cavity. | 05-21-2009 |
20090188624 | METHOD AND APPARATUS FOR ENHANCING FLOW UNIFORMITY IN A PROCESS CHAMBER - Methods and apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate may include a process chamber having an inner volume and an exhaust system coupled thereto, wherein the exhaust system includes a plurality of first conduits, each first conduit having an inlet adapted to receive exhaust from the inner volume of the process chamber. A pumping plenum is coupled to each of the plurality of first conduits. The pumping plenum has a pumping port adapted to pump the exhaust from the chamber. The conductance between each inlet of the plurality of first conduits and the pumping port is substantially equivalent. | 07-30-2009 |
20090277586 | Gas Introducing Apparatus, Manufacturing Method for the Gas Introducing Apparatus and Processing Apparatus - The present invention provides a gas introducing apparatus, which can perform start and stop of supplying a gas at respective gas injection holes, rapidly and simultaneously. A gas introducing apparatus | 11-12-2009 |
20100000682 | PROCESSING SYSTEM - In a processing system adapted for processing an object to be processed, by supplying a processing fluid into a processing vessel, the supply of the processing fluid into the processing vessel is significantly stabilized. This processing system includes the processing vessel configured to contain the object to be processed, a processing fluid generating unit configured to generate the processing fluid, a processing-side fluid passage configured for supplying the processing fluid generated in the processing fluid generating unit into the processing vessel, and a discharge fluid passage configured for discharging the processing fluid from the processing vessel. The processing system further includes a bypass-side fluid passage connected with the discharge fluid passage at its downstream end and configured for discharging the processing fluid generated in the processing fluid generating unit without passing it through the processing vessel, a pressure control mechanism provided to the discharge fluid passage downstream from a position in which the downstream end of the bypass-side fluid passage is connected with the discharge fluid passage, and a switch valve configured to selectively switch a fluid passage, through which the processing fluid generated in the processing fluid generating unit is fed, between the processing-side fluid passage and the bypass-side fluid passage. | 01-07-2010 |
20100012273 | Method and System for Supplying a Cleaning Gas Into a Process Chamber - A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a process chamber having at least two processing regions. Each processing region includes a substrate support assembly disposed in the processing region, a gas distribution system configured to provide gas into the processing region above the substrate support assembly, and a gas passage configured to provide gas into the processing region below the substrate support assembly. A first gas conduit is configured to flow a cleaning agent from the remote plasma source through the gas distribution assembly in each processing region while a second gas conduit is configured to divert a portion of the cleaning agent from the first gas conduit to the gas passage of each processing region. | 01-21-2010 |
20100101727 | CAPACITIVELY COUPLED REMOTE PLASMA SOURCE WITH LARGE OPERATING PRESSURE RANGE - A radio frequency (RF) coaxial resonator feeding a saltshaker-like gas distributing electrode assembly forms a capacitively coupled plasma source. This apparatus can generate plasma of high density over a wide pressure range and large process window. The system may be used as a remote radical-rich plasma source for materials surface processing. | 04-29-2010 |
20100122773 | APPARATUS FOR PROCESSING SUBSTRATE AND METHOD OF MAINTAINING THE APPARATUS - Provided is an apparatus for processing a substrate. The apparatus includes a chamber, a process unit, and an exhaust member. The chamber has an inner space. The process unit is disposed at the inner space of the chamber and is movable outward from the chamber through a side of the chamber. The process unit includes an exhaust line. The exhaust member is disposed at the chamber. The exhaust member is connected to the exhaust line, and the exhaust member includes a movable exhaust port configured to be moved according to a movement of the process unit. | 05-20-2010 |
20100307684 | PLASMA PROCESSING APPARATUS - A microwave plasma processing apparatus ( | 12-09-2010 |
20100326599 | INTEGRATED APPARATUS FOR VACUUM PRODUCING - Disclosed is an integrated vacuum producing apparatus, which vacuumizes a process chamber of an apparatus for manufacturing semiconductors, flat panel displays, etc. or exhausts gaseous material and by-products generated within the process chamber to an outside so as to purify it. Gaseous material, e.g. gas, generated within a chamber for manufacturing a semiconductor, a flat panel display, etc. is exhausted through each separate exhaust line so as to be purified. Therefore, excessive operation of a purifying system can be prevented through distribution of exhaust gas so that life span can be extended according to the operation of the apparatus. Also, exhausting can be smoothly achieved through each exhaust line so that it is possible to prevent delay of a semi-conductor manufacturing process due to inability of exhausting, and to easily remove non-reacted gas and by-products in an exhausting process. | 12-30-2010 |
20110094682 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a processing chamber, a part of which is formed of a dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting a target substrate; a processing gas supply unit for supplying a processing gas to the processing chamber to perform a plasma process on the target substrate; an RF antenna, provided outside the dielectric window, for generating a plasma from the processing gas by an inductive coupling in the processing chamber; and an RF power supply unit for supplying an RF power to the RF antenna. The RF antenna includes a single-wound or multi-wound coil conductor having a cutout portion in a coil circling direction; and a pair of RF power lines from the RF power supply unit are respectively connected to a pair of coil end portions of the coil conductor that are opposite to each other via the cutout portion. | 04-28-2011 |
20110100554 | PARALLEL SYSTEM FOR EPITAXIAL CHEMICAL VAPOR DEPOSITION - Embodiments of a parallel system for epitaxial deposition are disclosed herein. In some embodiments, a parallel system for epitaxial deposition includes a first body having a first process chamber and a second process chamber disposed within the first body; a shared gas injection system coupled to each of the first and the second process chambers; and a shared exhaust system coupled to each of the first and second process chambers, the exhaust system having independent control of an exhaust pressure from each chamber. In some embodiments, the gas injection system provides independent control of flow rate of a gas entering each chamber. | 05-05-2011 |
20110100555 | Semiconductor Device Manufacturing Apparatus Capable Of Reducing Particle Contamination - A semiconductor device manufacturing apparatus includes a process chamber, a conveyance chamber, a conveyance robot, a lock chamber, and a heating unit or temperature adjusting unit for reducing adherence of particles onto a substance to be processed by a thermo-phoretic force. The heating unit enables control of a temperature of the substance to be processed to be higher than a temperature of an inner wall or structural body of the process chamber or the conveyance chamber or the conveyance robot or the lock chamber, in conveying the substance to be processed. The temperature adjusting unit enables adjustment of a temperature of an inner wall or structural body of the process chamber or the conveyance chamber or the lock chamber to be lower than a temperature of the substance to be processed, in conveying the substance to be processed. | 05-05-2011 |
20110174440 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a vacuum evacuable processing chamber; a first electrode for mounting thereon a substrate to be processed in the processing chamber; a second electrode facing the first electrode in parallel in the processing chamber; and a processing gas supply unit for supplying a processing gas to a processing space between the first and the second electrode. The apparatus further includes a first high frequency power supply for applying a first high frequency power for generating a plasma of the processing gas to at least one of the first and the second electrode; and a cavity plasma generation unit, having a cavity formed in one of the first and the second electrode, for generating a plasma of a discharging gas in the cavity. | 07-21-2011 |
20110259521 | SUBSTRATE TREATMENT APPARATUS - The density of a treatment fluid in exhaust gas is reduced, the amount of the treatment fluid that flows into exhausting equipment connected to a substrate treatment apparatus is reduced, and a load on the exhausting equipment is reduced. A substrate treatment apparatus includes: a substrate treating unit that treats a substrate; a treatment fluid supply unit that supplies, to the substrate treating unit, a treatment fluid used to treat the substrate; and an exhaust gas treating unit into which an exhaust gas containing the treatment fluid discharged from the substrate treating unit is introduced. The exhaust gas treating unit includes spray nozzles that spray a solvent toward the exhaust gas, the solvent dissolving the treatment fluid, thereby reducing the density of the treatment fluid in the exhaust gas. The exhaust gas treating unit has porous dispersion plates that cause the exhaust gas to disperse. | 10-27-2011 |
20110259522 | Vacuum Processing Apparatus - A vacuum processing apparatus includes a transfer unit disposed at a center thereof, plural processing chambers, each processing chamber having a processing table for supporting an object to be processed and carrying out processing using a gas, and a mass flow controller unit interposed between two of the processing chambers for supplying gas to the chambers. | 10-27-2011 |
20110290419 | PLASMA PROCESSING APPARATUS - There is provided a plasma processing apparatus capable of easily exhausting a processing gas introduced in a space above a vertically movable upper electrode. The plasma processing apparatus includes a vertically movable upper electrode | 12-01-2011 |
20110315319 | PRE-CLEAN CHAMBER WITH REDUCED ION CURRENT - Apparatus for processing substrates are disclosed herein. In some embodiments, a substrate processing system may include a process chamber having a first volume to receive a plasma and a second volume for processing a substrate; a substrate support disposed in the second volume; and a plasma filter disposed in the process chamber between the first volume and the second volume such that a plasma formed in the first volume can only flow from the first volume to the second volume through the plasma filter. In some embodiments, the substrate processing system includes a process kit coupled to the process chamber, wherein the plasma filter is disposed in the process kit. | 12-29-2011 |
20120006488 | RING-SHAPED COMPONENT FOR USE IN A PLASMA PROCESSING, PLASMA PROCESSING APPARATUS AND OUTER RING-SHAPED MEMBER - A ring-shaped component for use in a plasma processing includes an inner ring-shaped member provided to surround an outer periphery of a substrate to be subjected to the plasma processing and an outer ring-shaped member provided to surround an outer periphery of the inner ring-shaped member. The outer ring-shaped member has a first surface facing a processing space side and a second surface facing an opposite side of the plasma generation side. The second surface has thereon one or more ring-shaped grooves. | 01-12-2012 |
20120138228 | DEEP-TRENCH SILICON ETCHING AND GAS INLET SYSTEM THEREOF - A deep-trench silicon etching apparatus, including a reaction chamber and a gas source cabinet, the gas source cabinet is connected to the reaction chamber via two independently controlled gas paths; wherein, a first gas path is used to introduce process gas for etch step from the gas source cabinet into the reaction chamber; a second gas path is used to introduce process gas for deposition step from the gas source cabinet into the reaction chamber. The present invention is used to solve the problems of gas mixture and gas delay occurring when process steps are switched. | 06-07-2012 |
20120145324 | PLASMA PROCESSING APPARATUS AND METHOD - An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching. | 06-14-2012 |
20120273133 | SURFACE PROTECTIVE FILM, GAS CONTACT MEMBER, GAS PROCESSING APPARATUS, AND MECHANICAL PUMP - An object of this invention is to provide a surface protective film which is capable of suppressing the entry of a corrosive gas as compared with conventional surface protective films. A surface protective film according to this invention is a film which contains yttria (Y | 11-01-2012 |
20120279657 | RF Coupled Plasma Abatement System Comprising an Integrated Power Oscillator - The present disclosure is directed towards a method and apparatus for generating an abatement plasma downstream of a processing chamber using an RF plasma ignited and sustained with an integrated power oscillator circuit driven by feedback based upon a load of the abatement plasma. In one embodiment, a plasma ashing system includes an abatement system configured to receive an effluent byproduct from an upstream processing chamber containing a workpiece. The effluent byproduct is provided along an exhaust conduit to a downstream afterburner unit having an integrated power oscillator, that relies upon an oscillating circuit operatively coupled to an antenna to ignite the abatement plasma within the exhaust conduit. The antenna, together with the plasma load, form a resonant tank circuit, which provides a feedback that drives operation of the oscillating circuit, thereby allowing the oscillating circuit to vary its output based upon changes in the abatement plasma load. | 11-08-2012 |
20130008604 | METHOD AND APPARATUS FOR ENHANCING FLOW UNIFORMITY IN A PROCESS CHAMBER - Methods and apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate may include a process chamber having an inner volume and an exhaust system coupled thereto, wherein the exhaust system includes a plurality of first conduits, each first conduit having an inlet adapted to receive exhaust from the inner volume of the process chamber. A pumping plenum is coupled to each of the plurality of first conduits. The pumping plenum has a pumping port adapted to pump the exhaust from the chamber. The conductance between each inlet of the plurality of first conduits and the pumping port is substantially equivalent. | 01-10-2013 |
20130008605 | MULTI-STATION DECOUPLED REACTIVE ION ETCH CHAMBER - A tandem processing-zones chamber having plasma isolation and frequency isolation is provided. At least two RF frequencies are fed from the cathode for each processing zones, where one frequency is about ten times higher than the other, so as to provide decoupled reactive ion etch capability. The chamber body is ground all around and in-between the two processing zones. The use of frequency isolation enables feed of multiple RF frequencies from the cathode, without having crosstalk and beat. A plasma confinement ring is also used to prevent plasma crosstalk. A grounded common evacuation path is connected to a single vacuum pump. | 01-10-2013 |
20130025787 | BAFFLE AND SUBSTRATE TREATING APPARATUSES INCLUDING THE SAME - Provided is a substrate treating apparatus, which includes a plasma generating part configured to generate plasma, a housing disposed under the plasma generating part, and having a space therein, a susceptor disposed within the housing and supporting a substrate, and a baffle including injection holes injecting the plasma supplied from the plasma generating part, to the substrate. The baffle includes a base in which the injection holes are formed, and a central portion of the base is thicker than an edge thereof. | 01-31-2013 |
20130105083 | Systems Comprising Silicon Coated Gas Supply Conduits And Methods For Applying Coatings | 05-02-2013 |
20130228284 | HOLLOW CATHODE DEVICE AND METHOD FOR USING THE DEVICE TO CONTROL THE UNIFORMITY OF A PLASMA PROCESS - A chamber component configured to be coupled to a processing chamber is described. The chamber component comprises one or more adjustable gas passages through which a process gas is introduced to the process chamber. The adjustable gas passage may be configured to form a hollow cathode that creates a hollow cathode plasma in a hollow cathode region having one or more plasma surfaces in contact with the hollow cathode plasma. Therein, at least one of the one or more plasma surfaces is movable in order to vary the size of the hollow cathode region and adjust the properties of the hollow cathode plasma. Furthermore, one or more adjustable hollow cathodes may be utilized to adjust a plasma process for treating a substrate. | 09-05-2013 |
20130276980 | ESC WITH COOLING BASE - An electrostatic chuck (ESC) with a cooling base for plasma processing chambers, such as a plasma etch chamber. An ESC assembly includes a 2-stage design where a heat transfer fluid inlet (supply) and heat transfer fluid outlet (return) is in a same physical plane. The 2-stage design includes an assembly of a base upon which a ceramic (e.g., AlN) is disposed. The base is disposed over a diffuser which may have hundreds of small holes over the chuck area to provide a uniform distribution of heat transfer fluid. Affixed to the diffuser is a reservoir plate which is to provide a reservoir between the diffuser and the reservoir plate that supplies fluid to the diffuser. Heat transfer fluid returned through the diffuser is passed through the reservoir plate. | 10-24-2013 |
20130276981 | DISTRIBUTED ELECTRO-STATIC CHUCK COOLING - Embodiments of the invention include an apparatus, system, and method for cooling a pedestal for supporting a workpiece during plasma processing. An embodiment of a pedestal includes: a base over which the workpiece is to be disposed, a plurality of nozzles to supply a fluid from a supply plenum to impinge on a surface of the base, and a plurality of return conduits to return the supplied fluid to a return plenum. The fluid to be supplied by the plurality of nozzles can be projected as one or more jets submerged in surrounding fluid or as a spray that emerges from a surrounding fluid within a volume between the plurality of nozzles and the base to impinge on the surface of the base. | 10-24-2013 |
20130284372 | ESC COOLING BASE FOR LARGE DIAMETER SUBSRATES - Embodiments include a base for an electrostatic chuck (ESC) assembly for supporting a workpiece during a manufacturing operation in a processing chamber, such as a plasma etch, clean, deposition system, or the like. Inner and outer fluid conduits are disposed in the base to conduct a heat transfer fluid. In embodiments, a counter-flow conduit configuration provides improved temperature uniformity. The conduit segments in each zone are interlaced so that fluid flows are in opposite directions in radially adjacent segments. In embodiments, each separate fluid conduit formed in the base comprises a channel formed in the base with a cap e-beam welded to a recessed lip of the channel to make a sealed conduit. To further improve the thermal uniformity, a compact, tri-fold channel segment is employed in each of the outer fluid loops. In further embodiments, the base includes a multi-contact fitting RF and DC connection, and thermal breaks. | 10-31-2013 |
20130319615 | APPARATUS AND METHOD FOR TREATING SUBSTRATES - Provided are an apparatus and a method for treating substrates. The apparatus includes a process chamber, a support plate to support a substrate inside the process chamber, a gas supply unit to supply a gas into the process chamber, a first plasma generation unit provided to generate plasma inside the process chamber, and a second plasma generation unit provided to generate plasma outside the process chamber. An etching process, an ashing process, an edge cleaning process, and a back-surface cleaning process are sequentially performed on the substrate inside the process chamber. | 12-05-2013 |
20130340938 | ADJUSTABLE GAP CAPACITIVELY COUPLED RF PLASMA REACTOR INCLUDING LATERAL BELLOWS AND NON-CONTACT PARTICLE SEAL - A plasma processing chamber includes a cantilever assembly and at least one vacuum isolation member configured to neutralize atmospheric load. The chamber includes a wall surrounding an interior region and having an opening formed therein. A cantilever assembly includes a substrate support for supporting a substrate within the chamber. The cantilever assembly extends through the opening such that a portion is located outside the chamber. The chamber includes an actuation mechanism operative to move the cantilever assembly relative to the wall. | 12-26-2013 |
20140020833 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus for processing a substrate with plasma including: a container including a first container member that forms a processing space in which the substrate is processed, and a second container member that forms a plasma generation space in which plasma is generated a gas introduction unit for introducing gas into the container; a plasma generation unit including an antenna that is provided in an external space of the container and configured to excite the gas in the plasma generation space with an electric field that is generated by a high-frequency voltage fed from a power supply; and a substrate holding unit that is capable of holding the substrate. A coating film that contains a semiconductor material is formed on a surface of the second container member that is arranged close to the antenna. | 01-23-2014 |
20140027059 | ELECTRODE FOR PLASMA PROCESSING APPARATUS, PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD AND STORAGE MEDIUM - The present invention provides an upper electrode and an etching apparatus including the electrode, both of which can properly reduce the intensity of the electric field of plasma around a central portion of a substrate, thus enhancing in-plane uniformity. In this apparatus, a recess, serving as a space for allowing a dielectric to be injected therein, is provided around a central portion of the upper electrode. Both a dielectric supply passage and a dielectric discharge passage are connected with the space. With such configuration, controlled supply of the dielectric into the recess makes the in-plane electric field intensity distribution uniform over various process conditions, such as the kind of wafer to be etched, the processing gas to be used, and the like. | 01-30-2014 |
20140102640 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus having a stable plasma generation under wide-ranging process conditions, and superior in uniformity and reproducibility, comprises an upper electrode | 04-17-2014 |
20140130980 | PLASMA GENERATION APPARATUS AND PLASMA GENERATION METHOD - Provided are a plasma generation apparatus and a plasma generation method. The plasma generation apparatus includes a chamber including a dielectric window and a toroidal discharge space, a magnetic core disposed to surround a portion of the chamber, an induction coil disposed to wind the magnetic core, and a waveguide radiating a microwave through the dielectric window. Alternating current flowing in the induction coil forms a magnetic flux at the magnetic core, and the magnetic flux generates inductively-coupled plasma. A microwave propagating along the waveguide generates microwave plasma inside the chamber. | 05-15-2014 |
20140138030 | CAPACITIVELY COUPLED PLASMA EQUIPMENT WITH UNIFORM PLASMA DENSITY - Techniques disclosed herein include apparatus and processes for generating plasma having a uniform electron density across an electrode used to generate the plasma. An upper electrode of a capacitively coupled plasma system can include structural features configured to assist in generating the uniform plasma. Such structural features define a surface shape, on a surface that faces the plasma. Such structural features can include a set of concentric rings having an approximately rectangular cross section, and protruding from the surface of the upper electrode. Such structural features can also include nested elongated protrusions having a cross-sectional size and shape, with spacing of the protrusions selected to result in a system that generates uniform density plasma. A dielectric member or sheet can be positioned on the structural features to prevent or inhibit erosion from plasma while still maintaining plasma uniformity. | 05-22-2014 |
20140158301 | VACUUM PROCESSING DEVICE AND VACUUM PROCESSING METHOD - A vacuum processing device and a vacuum processing method that strongly chuck and hold an insulating substrate when plasma processing is performed are provided. The vacuum processing device includes a vacuum chamber that is grounded; a vacuum evacuation device connected to the vacuum chamber; a chuck device arranged inside the vacuum chamber; a chuck power supply for applying an output voltage to a single-pole type electrode provided in the chuck device; a plasma generation gas introduction device for introducing a plasma generation gas into the vacuum chamber; and a plasma generation portion which converts the plasma generation gas into plasma. An object to be processed is arranged on the chuck device; and the chuck power supply applies an output voltage to the single-pole type electrode while the plasma is being generated inside the vacuum chamber; and the object to be processed is processed by the plasma while the object to be processed is being chucked by the chuck device. An insulating substrate is used as the object to be processed and the chuck power supply applies the output voltage that periodically changes between a positive voltage and a negative voltage to the single-pole type electrode. | 06-12-2014 |
20140196849 | INDUCTIVELY COUPLED PLASMA SOURCE - Embodiments of methods and apparatus for plasma processing are provided herein. In some embodiments, an inductively coupled plasma apparatus may include a bottom wall comprising a hub and a ring coupled to the hub by a capacitor, wherein the hub and the ring are each electrically conductive, and where the hub has a central opening aligned with a central axis of the inductively coupled plasma apparatus; a top wall spaced apart from and above the bottom wall, wherein the top wall has a central opening aligned with the central axis, and wherein the tope wall is electrically conductive; a sidewall electrically connecting the ring to the top wall; and a tube electrically connecting the hub to the top wall, the tube having a central opening aligned with the central axis. | 07-17-2014 |
20140231015 | PLASMA PROCESSING APPARATUS - The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber | 08-21-2014 |
20140238607 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a processing chamber configured to partition a processing space and a microwave generator configured to generate microwaves for plasma excitation. Further, the plasma processing apparatus includes a dielectric member mounted in the processing chamber so as to seal the processing space, and configured to introduce the microwaves generated by the microwave generator into the processing space. Further, the plasma processing apparatus includes an injector mounted in the dielectric member, and configured to supply the processing gas made in a plasma state due to the microwaves to the processing space through a through-hole formed in the dielectric member. Further, the plasma processing apparatus includes a waveguide plate made of a dielectric material mounted in the injector so as to surround the through-hole of the dielectric member, and configured to guide the microwaves propagated into the dielectric member toward the through-hole to an inside of the injector. | 08-28-2014 |
20140251540 | SUBSTRATE SUPPORTER AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME - Provided is a substrate processing apparatus including a chamber provided with a reaction space and formed with an exhaustion opening in a center of a bottom, a substrate supporter provided in the chamber and supporting a substrate, a gas injection assembly provided to be opposite to the substrate supporter, injecting a processing gas, and generating plasma thereof, and an exhauster connected to the exhaustion opening and provided below the chamber to exhaust an inside of the chamber, in which the substrate supporter includes a substrate support supporting the substrate and a plurality of supporting posts supporting an outside of the substrate support disposing the exhausting opening therebetween. | 09-11-2014 |
20140262033 | GAS SLEEVE FOR FORELINE PLASMA ABATEMENT SYSTEM - Methods and apparatus for protecting an inner wall of a foreline of a substrate processing system are provided herein. In some embodiments, an apparatus for treating an exhaust gas in a foreline of a substrate processing system includes a gas sleeve generator including a gas sleeve generator comprising a body having a central opening disposed through the body; a plenum disposed within the body and surrounding the central opening; an inlet coupled to the plenum; and an annulus coupled at a first end to the plenum and forming an annular outlet at a second end opposite the first end, wherein the annular outlet is concentric with and open to the central opening. The gas sleeve generator may be disposed upstream of a foreline plasma abatement system to provide a sleeve of a gas to a foreline of a substrate processing system. | 09-18-2014 |
20140262034 | PLASMA PROCESSING APPARATUS - This microwave plasma processing apparatus has, as a gas introduction mechanism for introducing a working gas inside a chamber ( | 09-18-2014 |
20140305590 | NON-PLASMA DRY ETCHING APPARATUS - A non-plasma dry etching apparatus forms textures by processing plural substrates at the same time, and all substrates and textures in respective substrate planes are formed to be uniform at the time of processing and all substrates and values of the reflectance in respective substrate planes are formed to be uniform as well as size reduction of equipment. The substrates are placed in plural stages so as to be parallel to the flow of a process gas in a reaction chamber. The uniform etching is realized by installing turbulent flow generation blades in the upstream side of the flow. | 10-16-2014 |
20140326409 | PLASMA PROCESSING APPARATUS AND METHOD - An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching. | 11-06-2014 |
20140360670 | PROCESSING SYSTEM FOR NON-AMBIPOLAR ELECTRON PLASMA (NEP) TREATMENT OF A SUBSTRATE WITH SHEATH POTENTIAL - A processing system is disclosed, having a plasma source chamber that excites source plasma to generate an electron beam, and a process chamber that houses a substrate for exposure of the substrate to the electron beam. The processing system also includes an electron injector that injects electrons from the source plasma into the electron beam as the electron beam enters the process chamber. The electron beam includes a substantially equal number of electrons and positively charged ions in the process chamber. In one embodiment, the processing system also includes a magnetic field generator that generates a magnetic field in the process chamber to capture the electrons included in the electron beam to generate a voltage potential between the magnetic field generator and the substrate. The voltage potential accelerates the positively charged ions to the substrate and minimizes the electrons that reach the substrate. | 12-11-2014 |
20150013909 | SUBSTRATE PROCESSING APPARATUS INCLUDING AUXILIARY GAS SUPPLY PORT - Provided is a substrate processing apparatus. The substrate processing apparatus in which processes with respect to substrates are performed, the substrate processing apparatus includes a lower chamber having an opened upper side, the lower chamber including a passage allowing the substrates to pass therethrough in a side thereof, an external reaction tube closing the opened upper side of the lower chamber to provide a process space in which the processes are performed, an internal reaction tube disposed within the external reaction tube, the internal reaction tube being disposed around a substrate holder placed in the process position to define a reaction region with respect to the substrates, the substrate holder on which the one or more substrates are vertically stacked, the substrate holder being movable between a stacking position in which the substrates are stacked within the substrate holder and a process position in which the processes with respect to the substrates are performed, at least one supply nozzle disposed along an inner wall of the external reaction tube, the at least one supply nozzle having a supply hole for discharging a reaction gas, and at least one exhaust nozzle disposed along the inner wall of the external reaction tube, the at least one exhaust nozzle having an exhaust hole for suctioning an non-reaction gas and byproducts within the process space. The lower chamber includes an auxiliary gas supply port connected to the stacking space defined inside the lower chamber. | 01-15-2015 |
20150020973 | PLASMA ETCHING APPARATUS - A plasma etching apparatus includes: a housing defining a plasma processing chamber; a workpiece retaining unit disposed within the plasma processing chamber of the housing and retaining a workpiece on an upper surface of the workpiece retaining unit; a processing gas injecting unit injecting a processing gas for plasma generation onto the workpiece retained by the workpiece retaining unit, the processing gas injecting unit including a processing gas jetting portion; a processing gas supply unit supplying the processing gas to the processing gas injecting unit; and a pressure reducing unit reducing a pressure within the plasma processing chamber. The processing gas jetting portion of the processing gas injecting unit includes a central injecting portion and a peripheral injecting portion surrounding the central injecting portion. | 01-22-2015 |
20150041061 | RECURSIVE PUMPING FOR SYMMETRICAL GAS EXHAUST TO CONTROL CRITICAL DIMENSION UNIFORMITY IN PLASMA REACTORS - Embodiments of the present invention provide apparatus and methods for reducing non-uniformity and/or skews during substrate processing. One embodiment of the present invention provides a flow equalizer assembly for disposing between a vacuum port and a processing volume in a processing chamber. The flow equalizing assembly includes a first plate having at least one first opening, and a second plate having two or more second openings. The first and second plates define a flow redistributing volume therebetween, and the at least one first opening and the two or more second openings are staggered. | 02-12-2015 |
20150107770 | SIDE STORAGE UNIT FOR REMOVING FUMES AND MANUFACTURING APPARATUS FOR SEMIONDUCTOR DEVICES HAVING THE SAME - Provided is a side storage unit, including a cleaning chamber to receive a plurality of substrates, the cleaning chamber having a gas supplier to supply therethrough cleaning gases for removing fumes from the substrate, and a plurality of discharge openings to discharge therethrough a mixture of the fumes and the cleaning gases; a plurality of substrate holders arranged on an inner sidewall of the cleaning chamber and supporting the substrates in the cleaning chamber, each of the substrate holders having at least one gas injector connected to the gas supplier to supply the cleaning gases onto a surface of the substrate; and a discharge assembly connected to the discharge openings to discharge the mixture of the fumes and the cleaning gases. | 04-23-2015 |
20150107771 | TRAP APPARATUS AND SUBSTRATE PROCESSING APPARATUS - A trap apparatus includes: a first cylindrical member including a space; a second cylindrical member removably disposed in the space and including side opening which allows a gas stream to flow in therethrough, and a downstream side opening which allows the gas stream flowing in from the upstream side opening to flow out therethrough; a downstream side trap member which is disposed inside the second cylindrical member to block the downstream side opening; and an upstream side trap member which is disposed between the downstream side trap member and the upstream side opening of the second cylindrical member and includes a concave portion recessed in a direction approaching the downstream side trap member. | 04-23-2015 |
20150144263 | SUBSTRATE HEATING PEDESTAL HAVING CERAMIC BALLS - A substrate heating pedestal for a process chamber for processing substrates is described. The pedestal comprises an annular plate comprising a surface having an array of recesses. A plurality of ceramic balls are each positioned in a recess on the surface of the annular plate to define a substrate receiving surface. A heating element is embedded in the annular plate. | 05-28-2015 |
20150357168 | REAGENT DELIVERY SYSTEM FREEZE PREVENTION HEAT EXCHANGER - Apparatus and methods that provide a reagent gas in a foreline abatement system are provided herein. In some embodiments, a reagent delivery system includes a water tank having an inner volume that holds a reagent liquid when disposed therein, and a heat exchanger having a central opening disposed in the inner volume and configured to keep a top surface of the reagent liquid from freezing when reagent liquid is disposed within the water tank. | 12-10-2015 |
20150359079 | Etching Apparatus Using Inductively Coupled Plasma - An etching apparatus may include a chuck, an antenna and a dielectric window. A substrate may be placed on an upper surface of the chuck. The antenna may be arranged over the chuck to form an inductive electromagnetic field between the antenna and the chuck. The dielectric window may be arranged between the antenna and the chuck to transmit the inductive electromagnetic field to the substrate. The dielectric window may have at least two receiving spaces into which an etching gas may be introduced, and a plurality of injecting holes connected to the receiving spaces to inject the etching gas toward the substrate. Thus, the flux or flow rate of the etching gas supplied to the substrate may be selectively controlled. | 12-10-2015 |
20150364348 | GAS PHASE ETCHING APPARATUS - Provided is a gas phase etching apparatus. The gas phase etching apparatus includes a process chamber having an inner space that is defined by a chamber body having an opened upper portion and an upper dome having an opened lower portion and detachably coupled to an upper portion of the chamber body, a substrate susceptor disposed in the inner space to ascend and descend by a driving unit, and a ring plate disposed on the substrate susceptor to cover a space between the substrate susceptor and an outer wall of the process chamber so that the inner space is partitioned into a process region defined above the substrate susceptor and an exhaust region defined below the substrate susceptor. The process region partitioned by the ring plate is surrounded by the upper dome, and the exhaust region is surrounded by the chamber body. | 12-17-2015 |
20150376791 | GAS CLUSTER REACTOR FOR ANISOTROPIC FILM GROWTH - A method of forming a low temperature silicide film on a substrate includes supplying a source gas to a cluster formation chamber to form a gas cluster that is subsequently moved to an ionization-acceleration chamber to form a gas cluster ion beam (GCIB). The GCIB is injected into a processing chamber containing the substrate. A precursor gas is injected through an injection device located on a top portion of the processing chamber to form a silicide film on the substrate by bombarding the substrate with the GCIB in the presence of the precursor gas. | 12-31-2015 |
20160035610 | ELECTROSTATIC CHUCK ASSEMBLIES HAVING RECESSED SUPPORT SURFACES, SEMICONDUCTOR FABRICATING APPARATUSES HAVING THE SAME, AND PLASMA TREATMENT METHODS USING THE SAME - An electrostatic chuck apparatus includes a base and a dielectric layer on the base. The dielectric layer includes a support surface opposite the base and a clamping electrode laterally extending along the support surface. The clamping electrode extends beyond an edge of the support surface such that the support surface is laterally recessed relative to the clamping electrode. The clamping electrode is configured to attract a substrate to the support surface by electrostatic force, and laterally extends along the support surface up to or beyond an edge of the substrate. Related electrostatic chuck assemblies, semiconductor fabricating apparatuses having the same, and plasma treatment methods using the same are also discussed. | 02-04-2016 |
20160060755 | SUBSTRATE PROCESSING APPARATUS - There is provided a substrate processing apparatus. The substrate processing apparatus includes a processing space configured to process a substrate placed on a substrate receiving surface on a substrate support, a gas supply system configured to supply gases into the processing space from the opposite side of the substrate receiving surface, an exhaust buffer chamber including a communication hole communicating with the processing space at least at a side portion of the processing space and a gas flow blocking wall extending in a blocking direction of the gases flowing through the communication hole, and a first heating element configured to heat the exhaust buffer chamber. | 03-03-2016 |
20160068952 | SUBSTRATE PROCESSING APPARATUS AND GAS DISTRIBUTION ASSEMBLY THEREOF - A substrate processing apparatus and a gas distribution assembly thereof are disclosed. A substrate processing apparatus includes a susceptor configured to place a substrate on it, a process gas distribution assembly configured to supply a process gas on a surface of the substrate from the upper side of the susceptor and an inert gas distribution assembly arranged next to the process gas distribution assembly, configured to supply an inert gas on the surface of the substrate from the upper side of the susceptor. The substrate processing apparatus further includes a gas exhausting system, the gas exhausting system has a gas exhausting aperture defined between the process gas distribution assembly and the inert gas distribution assembly, having an exhausting buffer for holding the gases passed through the gas exhausting aperture. | 03-10-2016 |
20160086773 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a reaction chamber for performing a plasma process on a substrate. A pedestal to receive the substrate thereon is provided in the reaction chamber. The reaction chamber includes an area A to generate the plasma therein, an exhaust area, and an area B provided between the area A and the exhaust area. The plasma is generated in the area B. An inner wall of the area A is covered with a first gasifying material. A plurality of partition members made of a second gasifying material is provided downstream of a surface of the substrate on the pedestal so as to divide an inside of the chamber into the area A and the area B to prevent a first particle present in the area B from diffusing into the area A. | 03-24-2016 |
20160104601 | LOCAL DRY ETCHING APPARATUS - A local dry etching apparatus includes a single vacuum chamber, a plurality of gas introduction units each including a discharge tube having an injection port opened in the vacuum chamber, a single workpiece table disposed in the vacuum chamber and mounting a workpiece thereon, a table driving device, a table driving control device, a gas supply device for supplying raw material gases to the gas introduction units, a single electromagnetic wave oscillator, plasma generation portions each formed to each of the discharge tubes of the gas introduction units, and an electromagnetic wave transmission unit having an electromagnetic wave switching unit capable of switching an electromagnetic wave such that one of the plasma generation portions is irradiated with the electromagnetic wave, in which the respective gas introduction units inject plasma having different fabrication characteristics. | 04-14-2016 |
20160118223 | PLASMA PROCESSING SYSTEM INCLUDING A SYMMETRICAL REMOTE PLASMA SOURCE FOR MINIMAL ION ENERGY - A remote plasma source is enclosed by a pair of counter electrodes of conical or similar shape that are mirror images of one another and connected across a plasma power source. | 04-28-2016 |
20160118225 | Plasma Processing Apparatus and Opening and Closing Mechanism used therein - A plasma etching apparatus | 04-28-2016 |
20160126067 | PLASMA PROCESSING APPARATUS - A resonance frequency is adjusted or optimized by shifting the resonance frequency without reducing an impedance function or a withstand voltage characteristic against a high frequency noise, when blocking, by using a multiple parallel resonance characteristic of a distributed constant line, the high frequency noise introduced into a line such as a power feed line or a signal line from an electrical member other than a high frequency electrode within a processing vessel. Regarding winding pitches, each of the solenoid coils | 05-05-2016 |
20160133442 | HALL EFFECT ENHANCED CAPACITIVELY COUPLED PLASMA SOURCE, AN ABATEMENT SYSTEM, AND VACUUM PROCESSING - Embodiments disclosed herein include an abatement system for abating compounds produced in semiconductor processes. The abatement system includes a plasma source that has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created. | 05-12-2016 |
20160138162 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus includes: a mounting table configured to place a substrate thereon to be rotatable around an axis; an antenna provided in a first region; and a reaction gas supply section configured to supply a reaction gas to the first region. The reaction gas supply section includes an inside injection port and an outside injection port. The inside injection port is provided at a position closer to the axis than an antenna region when viewed in the axis direction, and configured to inject the reaction gas in a direction getting away from the axis. The outside injection port is provided at a position farther from the axis than the antenna region when viewed in the axis direction, and configured to inject the reaction gas in a direction approaching the axis at a flow rate controlled independently of that of the reaction gas injected from the inside injection port. | 05-19-2016 |
20160172217 | PLASMA PROCESSING APPARATUS | 06-16-2016 |
20160189987 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus includes a processing container configured to air-tightly accommodate substrates, a plurality of mounting stands configured to mount the substrates, a process gas supply part configured to supply a process gas to the mounting stands, an exhaust mechanism configured to evacuate an interior of the processing container, a partition wall configured to independently surround the mounting stands with a gap left between the partition wall and each of the mounting stands, and cylindrical inner walls configured to independently surround the mounting stands with a gap left between each of the inner walls and each of the mounting stands. Slits are formed in the inner walls. The process gas in the processing spaces is exhausted via the slits. The inner walls include partition plates for bypassing the process gas so that the process gas does not directly flow into the slits. | 06-30-2016 |
20160379805 | PLASMA PROCESSING APPARATUS AND METHOD - A plasma etching apparatus includes an upper electrode and a lower electrode, between which plasma of a process gas is generated to perform plasma etching on a wafer W. The apparatus further comprises a cooling ring disposed around the wafer, a correction ring disposed around the cooling ring, and a variable DC power supply directly connected to the correction ring, the DC voltage being preset to provide the correction ring with a negative bias, relative to ground potential, for attracting ions in the plasma and to increase temperature of the correction ring to compensate for a decrease in temperature of a space near the edge of the target substrate due to the cooling ring. | 12-29-2016 |
20160379844 | TECHNIQUES AND APPARATUS FOR ANISOTROPIC METAL ETCHING - In one embodiment, a method for etching a copper layer disposed on a substrate includes directing reactive ions to the substrate when a mask that defines an exposed area and protected area is disposed on the copper layer, wherein an altered layer is generated in the exposed area comprising a chemically reactive material; and exposing the copper layer to a molecular species that is effective to react with the chemically reactive material so as to remove the altered layer. | 12-29-2016 |