Entries |
Document | Title | Date |
20080277062 | Plasma Processor - This invention includes a first filter ( | 11-13-2008 |
20080295964 | EXHAUST ASSEMBLY FOR A PLASMA PROCESSING SYSTEM - An exhaust assembly is described for use in a plasma processing system, whereby secondary plasma is formed in the exhaust assembly between the processing space and chamber exhaust ports in order to reduce plasma leakage to a vacuum pumping system, or improve the uniformity of the processing plasma, or both. The exhaust assembly includes a powered exhaust plate in combination with a ground electrode is utilized to form the secondary plasma surrounding a peripheral edge of a substrate treated in the plasma processing system. | 12-04-2008 |
20090000738 | ARRAYS OF INDUCTIVE ELEMENTS FOR MINIMIZING RADIAL NON-UNIFORMITY IN PLASMA - An arrangement for enabling local control of power delivery within a plasma processing system having a plasma processing chamber during processing of a substrate is provided. The arrangement includes a dielectric window and an inductive arrangement. The inductive arrangement is disposed above the dielectric window to enable power to couple with a plasma in the plasma processing system. The inductive arrangement includes a set of inductive elements, which provides the local control of power delivery to create a substantially uniform plasma in the plasma processing chamber. | 01-01-2009 |
20090101283 | PLASMA PROCESSING APPARATUS - In a plasma etching apparatus, a first high frequency for plasma generation and a second high frequency for ion attraction are respectively applied from two high frequency supplies to a susceptor. Further, DC voltage is applied from a variable DC power supply to an upper electrode via a filter circuit. An annular DC ground part attached to an upper side surface of the susceptor is connected to a filter circuit. This filter circuit allows a specific frequency component of the intermodulation distortion generated in a plasma by a series resonant to selectively flow to a ground line. | 04-23-2009 |
20090133836 | ADJUSTABLE HEIGHT PIF PROBE - A plasma probe assembly for use in a plasma processing chamber is provided. A semiconductor probe element with a probe surface at a first end of the semiconductor probe element is provided. An electrical connector is electrically connected to the semiconductor probe element. An electrically insulating sleeve surrounds at least part of the probe element. An adjustment device is connected to the semiconductor probe so that the probe surface is coplanar with an interior chamber surface of the plasma processing chamber. | 05-28-2009 |
20090151871 | SYSTEMS FOR DETECTING UNCONFINED-PLASMA EVENTS - A system for detecting unconfined-plasma events in a plasma processing chamber is disclosed. The system may include a sensor disposed in the plasma processing chamber for providing a current when unconfined plasma is present in the plasma processing chamber. The system may also include a converter for converting the current into a voltage and a filter for removing noise from the voltage to provide a first signal. The system may also include a detector for determining presence of the unconfined plasma using an amplified level of the first signal and/or the first signal. The system may also include a conductor for coupling the sensor and the converter to conduct the current from the sensor to the converter. The system may also include a shield for enclosing at least a portion of the conductor to at least reduce electromagnetic noise received by the conductor. | 06-18-2009 |
20090165951 | PLASMA PROCESSING APPARATUS CAPABLE OF SUPPRESSING VARIATION OF PROCESSING CHARACTERISTICS - A plasma processing apparatus includes a reaction container with the inner side wall thereof insulated, a sample rest and an antenna arranged in the reaction container. The high-frequency power is supplied to the antenna from a plasma generating power supply, the processing gas is introduced into the reaction container and converted to a plasma, and the sample placed on the sample rest is processed by the plasma. A matching unit for securing the impedance matching is inserted between the plasma generating power supply and a load circuit including the antenna. The matching unit includes a sensor for measuring the impedance characteristic on the load circuit side and a unit for changing the match point and the matching track leading to the match point on the input side of the matching unit in accordance with the measurement by the sensor. | 07-02-2009 |
20090194235 | PLASMA PROCESSING APPARATUS - The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber | 08-06-2009 |
20090242127 | PLASMA ETCHING APPARATUS AND METHOD, AND COMPUTER-READABLE STORAGE MEDIUM - A plasma etching apparatus includes a processing vessel; a lower electrode on which a target substrate is mounted in the processing vessel; an upper electrode disposed in the processing vessel to face the lower electrode in parallel; a processing gas supply unit configured to supply a processing gas into a processing space between the upper and the lower electrode; a first radio frequency power supply unit configured to apply, to the lower electrode, a first radio frequency power for generating plasma of the processing gas; a focus ring covering a top surface peripheral portion of the lower electrode protruding toward a radial outside of the substrate; a DC power supply configured to output a variable DC voltage; and a DC voltage supply network that connects the DC power supply to either one of the focus ring and the upper electrode or both depending on processing conditions of plasma etching. | 10-01-2009 |
20090242128 | PLASMA PROCESSING APPARATUS AND METHOD - A plasma processing apparatus includes an radio frequency (RF) power supply for applying an RF power for generating a plasma to at least one of an upper and a lower electrode which are disposed to face each other in a processing chamber, a high voltage power supply for applying a high voltage to the lower electrode to electrostatically adsorb the substrate to be held thereon and a control unit for controlling the RF power supply and the high voltage power supply. The control unit controls the high voltage power supply so as to apply a high voltage equal to or less than −1500 V to the lower electrode. | 10-01-2009 |
20090277585 | PLASMA PROCESSING APPRATUS AND METHOD AND APPARATUS FOR MEASURING DC POTENTIAL - In a plasma processing apparatus, a member for propagating high frequency from a high frequency power supply and/or to which the high frequency is applied. A power feed rod is electromagnetically shielded between a matching unit and a bottom plate of a chamber by a coaxial cylindrical conductor connected to a ground potential. A surface potential system disposed in an appropriate distance from the power feed rod in radius direction is installed in the cylindrical conductor, and measures in a non-contact state the electrostatic surface potential of the power feed rod through electrostatic capacitance and provides a controller with a surface potential detection signal including surface potential measurement value information. The controller performs a required signal processing or operation processing on the basis of the surface potential detection signal from the surface potential system, thereby obtaining the measurement value of the DC potential on the power feed rod. | 11-12-2009 |
20090294063 | PLASMA PROCESSING APPARATUS - The present invention is to provide a plasma processing apparatus, whose structure can be simplified, and further, which is capable of forming highly effective plasma and obtaining a satisfactory vertical etching property without involving a problem concerning interference. In the plasma processing apparatus according to the invention, a ground electrode provided at a position opposite to a substrate mounting electrode is configured to be a counter electrode, whose potential is in a floating state, and radio frequency power is branched at an arbitrary position of the radio frequency antenna coil, which generates inductive discharge, into the counter electrode through a capacitor so as to share a part of the radio frequency power used for inductive discharge, thereby generating a self-bias in the counter electrode. In the system, there is provided a mechanism for controlling the radio frequency voltage to be applied to the floating electrode uniformly. | 12-03-2009 |
20100006225 | Plasma processing apparatus - To make it possible to suppress deterioration of processing properties of a sample to be processed due to the distortion of ion sheath at the end portion of the sample to be processed or possible to maintain the condition for suppressing the deterioration, so that the acquisition rate of acceptable products can be increased, so as to thereby improve the yield. In a plasma processing apparatus, a minute hole | 01-14-2010 |
20100132890 | PLASMA PROCESSING DEVICE AND PLASMA DISCHARGE STATE MONITORING DEVICE - An object is to provide a plasma processing device capable of highly accurately monitoring an operation state including whether or not the plasma discharge is executed, whether the discharge is normal or abnormal and whether or not the maintenance work of the vacuum chamber is necessary. | 06-03-2010 |
20100163184 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus for processing a surface of a to-be-processed substrate includes a processing chamber, a first electrode provided in the processing chamber, a second electrode arranged in opposition to the first electrode, a main power source for supplying the first or second electrode with power for generating a plasma, a biasing power source for supplying the second or first electrode with biasing power, a gas supplying unit for supplying a processing gas into the processing chamber and a control unit for controlling the main power source, the biasing power source and the gas supplying unit. The control unit performs a control such that, during a time of transition from a stationary state of plasma, in which a plasma processing is to be carried out, to a plasma quenching, an output of the main power source is kept not larger than an output of the biasing power source. | 07-01-2010 |
20100193128 | SURFACE TREATMENT APPARATUS - A surface treatment apparatus generates resonance on a line including an electrode. The surface treatment apparatus has a vacuum container ( | 08-05-2010 |
20100218895 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus is provided with a replacement time detecting unit, which detects the status of residual charges which attract a semiconductor wafer and detects a time when an electrostatic chuck is to be replaced, at a time when a direct voltage application from a direct current source is stopped and the semiconductor wafer is brought up from the electrostatic chuck. | 09-02-2010 |
20100243162 | PLASMA PROCESSING APPARATUS - A uniformity of plasma density in a target object surface and plasma processing characteristics can be improved. A plasma processing apparatus | 09-30-2010 |
20100282414 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus including a chamber having an inner wall with a protective film thereon and a sample stage disposed in the chamber in which plasma is generated by supplying high-frequency wave energy to processing gas to conduct plasma processing for a sample on the sample stage using the plasma. The apparatus includes a control device which determines, based on monitor values of a wafer attracting current monitor (Ip) to monitor a current supplied from a wafer attracting power source, an impedance monitor (Zp) to monitor plasma impedance viewed from a plasma generating power source, and an impedance monitor (Zb) to monitor a plasma impedance viewed from a bias power supply, presence or absence of occurrence of an associated one of abnormal discharge in inner parts, deterioration in insulation of an insulating film of a wafer attracting electrode, and abnormal injection in a gas injection plate. | 11-11-2010 |
20100300620 | Atmospheric Inductively Coupled Plasma Generator - In an atmospheric inductively coupled plasma generating apparatus, impedance matching between a coil for plasma generation and an RF power source is effected at a high speed. A control method and/or condition for the output frequency of an oscillator which supplies a power to the coil for plasma generation or a control method and a control condition for the output power of the oscillator are changed appropriately in accordance with a generation state of a plasma. When a plasma is not generated, the output frequency is controlled according to a first condition and, when a plasma is generated, the output frequency is controlled according to a second condition different from the first condition. When a plasma is not generated, the output power is controlled according to a third condition and, when a plasma is generated, the output power is controlled according to a fourth condition different from the third condition. | 12-02-2010 |
20110061811 | PLASMA PROCESSING APPARATUS - A plasma monitoring device is provided with a measuring section, and a coaxial cable connected to the measuring section. One end of the coaxial cable is inserted into a plasma generating region in a processing chamber. A leading end portion of the coaxial cable is permitted to be a probe, and the portion is in a state where the core cable is exposed. The measuring section detects frequency distribution of electromagnetic waves existing in plasma detected by the probe portion of the coaxial cable, and displays the detected frequency distribution. | 03-17-2011 |
20110139370 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus including a chamber having an inner wall with a protective film thereon and a sample stage disposed in the chamber in which plasma is generated by supplying high-frequency wave energy to processing gas to conduct plasma processing for a sample on the sample stage using the plasma. The apparatus includes a control device which determines, based on monitor values of a wafer attracting current monitor (Ip) to monitor a current supplied from a wafer attracting power source, an impedance monitor (Zp) to monitor plasma impedance viewed from a plasma generating power source, and an impedance monitor (Zb) to monitor a plasma impedance viewed from a bias power supply, presence or absence of occurrence of an associated one of abnormal discharge in inner parts, deterioration in insulation of an insulating film of a wafer attracting electrode, and abnormal injection in a gas injection plate. | 06-16-2011 |
20110162798 | METHODS AND APPARATUS FOR TUNING MATCHING NETWORKS - Methods and apparatus for tuning matching networks are provided herein. A method of tuning a matching network includes providing a matching network coupling an RF source to a load, the matching network having a tunable element disposed at a first set point; increasing a value of the tunable element by a first step above the first set point; sensing a first adjusted value of a reflected RF power; decreasing the value of the tunable element by the first step below the first set point; sensing a second adjusted value of the reflected RF power; comparing the first and the second adjusted values of the reflected RF power; and moving the tunable element to a second set point that corresponds to a position having a lowest adjusted value of the reflected RF power. The method may be repeated until the reflected RF power falls within an acceptable reflected RF power range. | 07-07-2011 |
20110209827 | AUTOMATIC MATCHING UNIT AND PLASMA PROCESSING APPARATUS - In an automatic matching unit, a controller includes a first and a second matching algorithm. The operating point Z | 09-01-2011 |
20110209828 | METHOD AND APPARATUS FOR PLASMA PROCESSING - The invention provides a plasma processing apparatus capable of minimizing the non-uniformity of potential distribution around wafer circumference, and providing a uniform process across the wafer surface. The apparatus is equipped with a focus ring formed of a dielectric, a conductor or a semiconductor and having RF applied thereto, the design of which is optimized for processing based on a design technique clarifying physical conditions for flattening a sheath-plasma interface above a wafer and the sheath-plasma interface above the focus ring. A surface voltage of the focus ring is determined to be not less than a minimum voltage for preventing reaction products caused by wafer processing from depositing thereon. The surface height, surface voltage, material and structure of the focus ring are optimized so that the height of an ion sheath formed on the focus ring surface is either equal or has a height difference within an appropriate tolerance range to the height of the ion sheath formed on the wafer surface. Optimization of the structure is realized by setting up an appropriate tolerance range taking into consideration the variation caused by consumption of the focus ring. | 09-01-2011 |
20110214811 | AUTOMATIC MATCHING METHOD, COMPUTER-READABLE STORAGE MEDIUM, AUTOMATIC MATCHING UNIT, AND PLASMA PROCESSING APPARATUS - A controller | 09-08-2011 |
20110240221 | PLASMA PROCESSING APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A plasma processing apparatus includes a processing chamber; a lower electrode provided in the processing chamber and having a base made of a conductive metal to which a high frequency power is applied, the lower electrode also serving as a mounting table for mounting thereon a target substrate; an upper electrode provided in the processing chamber to face the lower electrode; and a focus ring disposed above the lower electrode to surround the target substrate. An electrical connection mechanism is provided between the base of the lower electrode and the focus ring to electrically connect the base of the lower electrode to the focus ring through a current control element, and generates a DC current in accordance with a potential difference. | 10-06-2011 |
20110240222 | PLASMA PROCESSING APPARATUS - A gas shower head having many gas discharging ports formed on the lower surface is provided on the top wall of a processing container such that the gas shower head faces a placing table on which a substrate is to be placed, and the top wall of the processing container at the periphery of the gas shower head is composed of a dielectric material. A coil is provided on the dielectric material, and the phase of high frequency waves to be supplied to the gas shower head and the coil is adjusted so that the phase of the electrical field in a processing region above the substrate and the phase of the electrical field in the peripheral region surrounding the processing region are same or opposite to each other. | 10-06-2011 |
20110259520 | ARRANGEMENTS FOR IMPROVING BEVEL ETCH REPEATABILITY AMONG SUBSTRATES - An apparatus for improving bevel etch repeatability among substrates is provided. The apparatus includes an optical arrangement disposed to ascertain at least one bevel edge characteristic of a bevel edge of a substrate. The apparatus also includes a logic module for deriving at least one compensation factor from the at least one bevel edge characteristic. At least one compensation factor pertains to an adjustment in a bevel etch process parameter. The apparatus further includes a plasma processing chamber for performing bevel etching utilizing the at least one compensation factor. | 10-27-2011 |
20110277933 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes: a vacuum chamber; a plasma processing execution portion; a discharge state detecting unit; a window portion; a camera; a first storing portion; a second storing portion; and an image data extracting unit. The image data extracting unit extracts at least moving image data, which show the generation state of the abnormal discharge, from the first storing portion and stores the extracted moving image data in the second storing portion when the discharge state detecting unit detects the abnormal discharge. | 11-17-2011 |
20110284164 | PLASMA GENERATING APPARATUS - Provided is a plasma generating apparatus. The plasma generating apparatus includes a vacuum chamber, an ElectroStatic Chuck (ESC), an antenna unit, and an antenna cover. The vacuum chamber has a hollow interior and is sealed at a top. The ESC disposed at an internal center of the vacuum chamber receives an external bias Radio Frequency (RF). The antenna unit covers and seals the through-hole of an insulating vacuum plate. The antenna cover covers a top of the antenna unit and has a gas injection port. | 11-24-2011 |
20120018095 | ESC HIGH VOLTAGE CONTROL AND METHODS THEREOF - A plasma processing system for processing a wafer is provided. The system includes an electrostatic chuck (ESC) positioned inside a plasma processing chamber and configured to support the wafer. The ESC includes a positive terminal for providing a first force to the wafer and a negative terminal for providing a second force to the wafer. The system also includes a first circuit arrangement configured to measure at least a first voltage for determining a value of a positive load current applied to the positive terminal. The system further includes a second circuit arrangement configured to measure at least a second voltage for determining a value of a negative load current applied to the negative terminal. The system yet also includes circuitry configured to adjust a bias voltage using the values of the positive load current and the negative load current for balancing the first force and the second force. | 01-26-2012 |
20120018096 | PROCESS CHAMBER HAVING MODULATED PLASMA SUPPLY - The invention relates to a plasma chamber ( | 01-26-2012 |
20120090782 | MICROWAVE PLASMA SOURCE AND PLASMA PROCESSING APPARATUS - There are provided a microwave plasma source and a plasma processing apparatus capable of improving uniformity of a plasma density distribution within a processing chamber by controlling positions of nodes and antinodes of a standing wave of microwave within the processing chamber not to be fixed. The microwave plasma source | 04-19-2012 |
20120118504 | PROCESSING APPARATUS AND METHOD FOR OPERATING SAME - A processing apparatus for performing a process on an object includes a chamber; a rotary floater for supporting the object on its upper end side; XY rotating attraction bodies provided in the rotary floater at an interval circumferentially; a floating attraction body provided in the rotary floater to extend circumferentially; a floating electromagnet group for floating the rotary floater while adjusting an inclination of the rotary floater by applying a vertically upward acting magnetic attraction to the floating attraction body; an XY rotating electromagnet group for rotating the rotary floater while adjusting a horizontal position of the rotary floater by applying a magnetic attraction force to the XY rotating attraction bodies; a gas supply for supplying a gas into the chamber; a mechanism for performing a process on the object; and an apparatus control unit for controlling an entire operation of the apparatus. | 05-17-2012 |
20120145322 | PLASMA PROCESSING APPARATUS - In the present invention, there is provided a plasma processing apparatus including a vacuum processing chamber for applying a plasma processing to a sample, a sample stage deployed inside the vacuum processing chamber for mounting the sample thereon, induction antennas provided outside the vacuum processing chamber, a radio-frequency power supply for supplying a radio-frequency power to the induction antennas, and a Faraday shield which is capacitively coupled with the plasma, a radio-frequency voltage being applied to the Faraday shield from the radio-frequency power supply via a matching box, wherein the matching box includes a series LC circuit including a variable capacitor and an inductor, a motor control unit for controlling a motor for the variable capacitor, and a radio-frequency voltage detection unit for detecting the radio-frequency voltage applied to the Faraday shield, the matching box executing a feedback control over the radio-frequency voltage applied to the Faraday shield. | 06-14-2012 |
20120145323 | Plasma Processing Apparatus and Plasma Processing Method - A plasma processing apparatus for subjecting a substrate to be processed to plasma processing includes a processing chamber, a substrate electrode having an electrostatic chuck mechanism, a plasma generator, a high-frequency bias power supply which applies a high-frequency bias voltage to the substrate electrode, a voltage monitor which monitors the high-frequency bias voltage, a current monitor which monitors a high-frequency bias current, a measurement storage unit which stores a resistance component, an induction component and a capacity component of the electrostatic chuck mechanism, which have been calculated beforehand as fitting parameters of an expression | 06-14-2012 |
20120168081 | Adjustable Capacitor, Plasma Impedance Matching Device, Plasma Impedance Matching Method, And Substrate Treating Apparatus - Disclosed is a substrate treating apparatus which comprises a process chamber; an electrode configured to generate plasma from a gas supplied into the process chamber; an RF power supply configured to output an RF power; a transmission line configured to transmit the RF power to the electrode from the RF power supply; an impedance matching unit connected to the transmission line and configured to match plasma impedance; and a controller configured to output a control signal to the impedance matching unit, wherein the impedance matching unit comprises an adjustable capacitor having a plurality of capacitors and a plurality of switches corresponding to the plurality of capacitors, the plurality of switches being switched on/off according to the control signal so that capacitance of the adjustable capacitor is adjusted. | 07-05-2012 |
20120175061 | PLASMA ETCHING METHOD AND APPARATUS, AND METHOD OF MANUFACTURING LIQUID EJECTION HEAD - The plasma etching method includes: an etching step of placing, on a stage in a chamber, a substrate in which a prescribed mask pattern is formed by a protective film on a surface of a material to be etched, generating a plasma in the chamber while supplying processing gas to the chamber, and etching a portion of the material corresponding to an opening portion in the mask pattern; a voltage measurement step of, during the etching in the etching step, measuring a voltage at the surface of the material on a side where the mask pattern is formed, through a conductive member that is placed in contact with the surface of the material on the side where the mask pattern is formed; and a control step of controlling an etching condition in the etching step in accordance with a measurement result obtained in the voltage measurement step. | 07-12-2012 |
20120285620 | Current Threshold Response Mode for Arc Management - This disclosure describes systems, methods, and apparatuses for extinguishing electrical arcs in a plasma processing chamber. Once an arc is detected, the steady state voltage provided to the plasma processing chamber can be reduced, and the current being provided to the chamber decays below a steady state value as the arc is extinguished. When the current falls to or below a current threshold, the voltage can be ramped back up bringing the voltage and current back to steady state values. This technique enables power to return to a steady state level faster than traditional arc mitigation techniques. | 11-15-2012 |
20120318456 | METHOD OF CONTROLLING THE SWITCHED MODE ION ENERGY DISTRIBUTION SYSTEM - Systems, methods and apparatus for regulating ion energies in a plasma chamber and chucking a substrate to a substrate support are disclosed. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber, controllably switching power to the substrate so as to apply a periodic voltage function (or a modified periodic voltage function) to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a defined distribution of energies of ions at the surface of the substrate so as to effectuate the defined distribution of ion energies on a time-averaged basis. | 12-20-2012 |
20130014894 | METHODS AND APPARATUS FOR CONTROLLING POWER DISTRIBUTION IN SUBSTRATE PROCESSING SYSTEMS - Methods and apparatus for controlling power distribution in a substrate processing system are provided. In some embodiments, a substrate processing system including a process chamber having a substrate support and a processing region disposed above the substrate support; a first conduit disposed above the processing region to provide a portion of a first toroidal path that extends through the first conduit and across the processing region; a second conduit disposed above the processing region to provide a portion of a second toroidal path that extends through the second conduit and across the processing region; an RF generator coupled to the first and second conduits to provide RF energy having a first frequency to each of the first and second conduits; an impedance matching network disposed between the RF generator and the first and second conduits; and a power divider to control the amount of RF energy provided to the first and second conduits from the RF generator. | 01-17-2013 |
20130056155 | SENSING OF PLASMA PROCESS PARAMETERS - A system for monitoring a condition in an enclosed plasma processing space ( | 03-07-2013 |
20130075036 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus includes a plasma-generation high-frequency power supply which generates plasma in a processing chamber, a biasing high-frequency power supply which applies high-frequency bias electric power to an electrode on which a sample is placed, a monitor which monitors a peak-to-peak value of the high-frequency bias electric power applied to the electrode, an electrostatic chuck power supply which makes the electrode electrostatically attract the sample, a self-bias voltage calculating unit which calculates self-bias voltage of the sample by monitoring the peak-to-peak value of the high-frequency bias electric power applied to the electrode, and an output voltage control unit which controls output voltage of the electrostatic chuck power supply based on the calculated self-bias voltage. | 03-28-2013 |
20130105082 | SUBSTRATE PROCESSING DEVICE AND IMPEDANCE MATCHING METHOD | 05-02-2013 |
20130174983 | PLASMA PROCESSOR AND PLASMA PROCESSING METHOD - An etching chamber | 07-11-2013 |
20130199727 | PLASMA PROCESSING APPARATUS - Provided is a capacitively coupled plasma processing apparatus which improves a controllability of the RF bias function and reliably prevents unwanted resonance from being generated on a RF transmission line between a counter electrode and ground potential to enhance reliability of the plasma process. In the capacitive coupled type plasma processing apparatus, three kinds of RF powers from a first, second and third RF power supplies ( | 08-08-2013 |
20130206337 | ARRANGEMENTS FOR CONTROLLING PLASMA PROCESSING PARAMETERS - A plasma processing system having a plasma processing chamber configured for processing a substrate is provided. The substrate is disposed above a chuck and is surrounded by an edge ring, the edge ring being electrically isolated from the chuck. The plasma processing system includes a first RF power supply for providing a first RF power to the chuck. The plasma processing system also includes an edge ring RF voltage control arrangement which is coupled to the edge ring to provide second RF power to the edge ring. The plasma processing chamber is configured to strike plasma to process the substrate, the substrate being processed while the edge ring RF voltage control arrangement is configured to control the second RF power to the edge ring such that a predefined potential difference is maintained between the edge ring and the substrate while processing the substrate. | 08-15-2013 |
20130213573 | STATE-BASED ADJUSTMENT OF POWER AND FREQUENCY - Systems and methods for state-based adjustment of power and frequency are described. A primary generator of a system includes a primary power supply for supplying a primary radio frequency (RF) signal to an electrode. The primary generator further includes an automatic frequency control (AFC) to provide a first frequency input to the primary power supply when a pulsed signal is in a first state. A secondary generator of the system includes a secondary power supply for supplying a secondary RF signal to the electrode. The secondary generator also includes an AFC to provide a second frequency input to the secondary power supply when the pulsed signal is in the first state. The secondary generator includes an AFC to provide a third frequency input to the secondary power supply when the pulsed signal is in a second state. The system includes a digital pulsing source for generating the pulsed signal. | 08-22-2013 |
20130233490 | PLASMA PROCESSING CHAMBER FOR BEVEL EDGE PROCESSING - A process chamber includes a wafer support to mount a wafer to be processed in the process chamber, with the wafer having an annular edge exclusion area. A first electrically grounded ring extends in an annular path radially outward of the edge exclusion area and is electrically isolated from the wafer support. A second electrode is configured with a center area opposite to the wafer support. A second electrically grounded ring extends in an annular path radially outward of the second electrode and the edge exclusion area. The second electrically grounded ring is electrically isolated from the center area. An annular mount section has a DC bias ring, and the DC bias ring opposes the edge exclusion area when the wafer is present. A DC control circuit is provided for applying a DC voltage to the DC bias ring. | 09-12-2013 |
20130240145 | METHODS AND APPARATUS FOR CORRECTING FOR NON-UNIFORMITY IN A PLASMA PROCESSING SYSTEM - A plasma processing system having a plasma processing chamber comprising at least one of a chamber wall and a chamber liner is disclosed. The plasma processing system includes a plurality of ground straps disposed around a circumference of a chamber surface, the chamber surface being one of the chamber walls and the chamber liner of the plasma processing chamber. The plasma processing system further includes at least a first impedance device coupled to at least a first ground strap of the plurality of ground straps, wherein a second ground strap of the plurality of ground straps is not provided with a second impedance device having the same impedance value as the first impedance device. | 09-19-2013 |
20130284370 | INDEPENDENT CONTROL OF RF PHASES OF SEPARATE COILS OF AN INDUCTIVELY COUPLED PLASMA REACTOR - Plasma distribution is controlled in a plasma reactor by controlling the phase differences between different RF coil antennas, in accordance with a desired or user-selected phase difference, by a phase-lock feedback control loop. | 10-31-2013 |
20130284371 | CAPACITIVE COUPLING PLASMA PROCESSING APPARATUS AND METHOD FOR USING THE SAME - A plasma processing apparatus includes a process container configured to accommodate a target substrate and to be vacuum-exhausted. A first electrode and a second electrode are disposed opposite each other within the process container. The first electrode includes an outer portion and an inner portion both facing the second electrode such that the outer portion surrounds the inner portion. An RF power supply is configured to apply an RF power to the outer portion of the first electrode. A DC power supply is configured to apply a DC voltage to the inner portion of the first electrode. A process gas supply unit is configured to supply a process gas into the process container, wherein plasma of the process gas is generated between the first electrode and the second electrode. | 10-31-2013 |
20130327481 | METHODS AND APPARATUS FOR DETECTING AZIMUTHAL NON-UNIFORMITY IN A PLASMA PROCESSING SYSTEM - Apparatus and methods for assessing RF return current azimuthal uniformity are disclosed. A plurality of non-linear substantially-enclosed RF current sensors are disposed azimuthally around a central axis of a plasma processing chamber. When a plasma is ignited in the plasma processing chamber, the RF return currents are sensed in the plurality of non-linear substantially-enclosed RF current sensors and analyzed to ascertain whether RF return current azimuthal uniformity is acceptable. | 12-12-2013 |
20140020831 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a processing chamber for processing a sample with a plasma, an RF power supply for generating the plasma within the processing chamber, an RF bias power supply for supplying RF bias power to a sample stage on which the sample is mounted, a pulse generation unit for creating first pulses for modulating the output from the RF power supply for generating the plasma and second pulses for modulating the output from the RF bias power supply, and a controller for providing control of the processing of the sample with the sample. The pulse generation unit creates the first pulses and the second pulses synchronized based on a pulse delay time transmitted from the controller. The pulse delay time is established to delay the second pulses relative to the first pulses. | 01-23-2014 |
20140020832 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD USING SAME - A substrate processing method uses a substrate processing apparatus including a chamber for accommodating a substrate, a lower electrode to mount the substrate, a first RF power applying unit for applying an RF power for plasma generation into the chamber, and a second RF power applying unit for applying an RF power for bias to the lower electrode. The RF power for plasma generation is controlled to be intermittently changed by changing an output of the first RF power applying unit at a predetermined timing. If no plasma state or an afterglow state exists in the chamber by a control of the first RF power applying unit, an output of the second RF power applying unit is controlled to be in an OFF state or decreased below an output of the second RF power applying unit when the output of the first RF power applying unit is a set output. | 01-23-2014 |
20140034239 | DIFFERENTIAL COUNTER ELECTRODE TUNING IN A PLASMA REACTOR WITH AN RF-DRIVEN WORKPIECE SUPPORT ELECTRODE - A plasma reactor includes an RF-driven wafer support electrode underlying a process zone and two (or more) counter electrodes overlying the process zone and facing different portions of the process zones, two (or more) variable reactances connected between respective ones of the counter electrodes and ground, and a controller governing the variable reactances to control distribution of a plasma parameter such as plasma ion density or ion energy. | 02-06-2014 |
20140102638 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus capable of optimizing a plasma process is provided. The plasma processing apparatus includes a control unit for controlling a minimum energy and a maximum energy of ions incident onto a substrate independently of each other such that ion energy of the ions are concentrated at a first energy band and a second energy band respectively. In the plasma processing apparatus, the oxide film is etched to form a hole within the oxide film, the first energy band is lower than a first energy value at which the oxide film is etched while the organic film is not etched, and the second energy band is higher than a second energy value at which an etching yield at an inclined surface of the hole is higher than an etching yield of an upper surface of the organic film. | 04-17-2014 |
20140102639 | PLASMA TREATMENT OF HOLLOW BODIES - The invention relates to a device and a method for plasma treatment of hollow bodies. The invention is in particular suited for the protective plasma treatment of the inner surface of thermally sensitive hollow bodies such as plastic bottles. The plasma treatment according to the invention can, for example, consist of chemical activation, sterilization, cleaning or coating. One or more hollow bodies are put into a processing chamber for treatment. The processing chamber is in fluid connection with at least one plasma source. An exhaust device on the processing chamber generates a negative pressure in the processing chamber relative to the plasma source so that plasma can expand out of the plasma source into the processing chamber and hollow body. | 04-17-2014 |
20140124139 | PLASMA PROCESSING APPARATUS AND METHOD - A plasma processing apparatus includes a first and second electrodes disposed on upper and lower sides and opposite each other within a process container, a first RF power application unit and a DC power supply both connected to the first electrode, and second and third radio frequency power application units both connected to the second electrode. A conductive member is disposed within the process container and grounded to release through plasma a current caused by a DC voltage applied from the DC power supply. The conductive member is supported by a first shield part around the second electrode and laterally protruding therefrom at a position between the mount face of the second electrode and an exhaust plate for the conductive member to be exposed to the plasma. The conductive member is grounded through a conductive internal body of the first shield part. | 05-08-2014 |
20140202633 | METHOD AND SYSTEM FOR ION-ASSISTED PROCESSING - A system for processing a substrate includes a plasma chamber to produce a plasma including reactive gas ions at a first pressure, a bias supply to supply a bias between the plasma chamber and the substrate, a plasma sheath modifier disposed between the plasma chamber and substrate, the plasma sheath modifier having an aperture configured to direct the reactive ions toward the substrate in a beam having an ion beam profile, and a process chamber enclosing the substrate, the process chamber at a second pressure different than the first pressure to define a pressure differential. | 07-24-2014 |
20140262031 | MULTI-MODE ETCH CHAMBER SOURCE ASSEMBLY - A multi-chambered processing platform includes one or more multi-mode plasma processing systems. In embodiments, a multi-mode plasma processing system includes a multi-mode source assembly having a primary source to drive an RF signal on a showerhead electrode within the process chamber and a secondary source to generate a plasma with by driving an RF signal on an electrode downstream of the process chamber. In embodiments, the primary | 09-18-2014 |
20140262032 | METHOD AND APPARATUS FOR GENERATING A VARIABLE CLOCK USED TO CONTROL A COMPONENT OF A SUBSTRATE PROCESSING SYSTEM - Methods and apparatus for generating a variable clock used to control a component of a substrate processing system are provided herein. In some embodiments, an apparatus for controlling a substrate processing system includes: a phase locked loop circuit for generating a relative clock that is phase locked to a variable frequency signal being used by a substrate processing chamber; and a controller, coupled to the phase locked loop circuit, for producing a control signal for a component of the substrate processing system, wherein the control signal is based upon the relative clock and an operating indicia of the substrate processing system. | 09-18-2014 |
20140345802 | PLASMA PROCESSING APPARATUS - In a plasma processing apparatus, first to third RF power monitors | 11-27-2014 |
20140367043 | METHOD FOR FAST AND REPEATABLE PLASMA IGNITION AND TUNING IN PLASMA CHAMBERS - Embodiments of the present invention include methods and apparatus for plasma processing in a process chamber using an RF power supply coupled to the process chamber via a matching network. In some embodiments, the method includes providing RF power to the process chamber by the RF power supply at a first frequency while the matching network is in a hold mode, adjusting the first frequency, using the RF power supply, to a second frequency during a first time period to ignite the plasma, adjusting the second frequency, using the RF power supply, to a known third frequency during a second time period while maintaining the plasma, and changing an operational mode of the matching network to an automatic tuning mode to reduce a reflected power of the RF power provided by the RF power supply. | 12-18-2014 |
20140367044 | Methods for Automatically Determining Capacitor Values and Systems Thereof - A method for automatically performing power matching using a mechanical RF match during substrate processing is provided. The method includes providing a plurality of parameters for the substrate processing wherein the plurality of parameters including at least a predefined number of learning cycles. The method also includes setting the mechanical RF match to operate in a mechanical tuning mode. The method further includes providing a first set of instructions to the substrate processing to ignore a predefined number of cycles of Rapid Alternating Process RAP steps. The method yet also includes operating the mechanical RF match in the mechanical tuning mode for the predefined number of learning cycles. The method yet further includes determining a set of optimal capacitor values. The method moreover includes providing a second set of instructions to a power generator to operate in a frequency tuning mode. | 12-18-2014 |
20150013908 | ETCHING APPARATUS - An etching apparatus includes a controller configured to control a high frequency power supply to supply a high frequency power to a mounting table for etching a polymer layer formed on a base layer placed on the mounting table, using plasma generated from a predetermined gas supplied from a gas supply source by the high frequency power, the polymer layer having a periodic pattern of a first polymer and a second polymer formed by self-assembling the first polymer and the second polymer of a block copolymer that is capable of being self-assembled, the high frequency power being set for etching the polymer layer using the generated plasma such that the second polymer is removed and a pattern of the first polymer is formed for subsequently etching the base layer using the pattern of the first polymer as a mask. | 01-15-2015 |
20150020972 | PROCESS CONDITION SENSING DEVICE AND METHOD FOR PLASMA CHAMBER - A sensing device for measuring a plasma process parameter in a plasma chamber for processing workpieces may include a substrate with one or more sensor embedded in the substrate. The substrate can have a surface made of substantially the same material as workpieces that are plasma processed in the plasma chamber. Each sensor can include a collector portion made of substantially the same material as the substrate surface. The collector portion includes a surface that is level with the surface of the substrate. Sensor electronics are embedded into the substrate and coupled to the collector portion. When the substrate surface is exposed to a plasma one or more signals resulting from the plasma can be measured with the sensor(s). | 01-22-2015 |
20150027637 | PLASMA PROCESSING APPARATUS - Provided is a plasma processing apparatus in which a variable inductor is installed in series with a variable condenser in a second power feeding unit that distributes and supplies high-frequency power to an inner upper electrode | 01-29-2015 |
20150041060 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a plasma forming part, a putting stage on which a wafer is put, a bias power supply which supplies high-frequency power to the putting stage and a detection part which detects amounts of positive and negative currents flowing between the bias power supply and the putting stage and a ratio of the positive and negative current amounts, and the plasma processing apparatus adjusts formation of the plasma or the plasma processing condition of the wafer in accordance with the ratio. | 02-12-2015 |
20150068681 | PLASMA PROCESSING APPARATUS - A plasma processing device includes a processing chamber for generating a plasma, a vacuum window that constitutes a part of a wall of the processing chamber, induction antennas including at least two systems for generating plasma in the processing chamber, radio frequency power sources for applying the current independently to the respective induction antennas, and a controller including phase circuits for controlling the phase of the current of the radio frequency power sources of the respective systems or the current value over time, and a control unit. The controller sequentially time modulates the phase difference between currents flowing to the systems or the current value within a sample processing period to move the plasma generation position so as to make the ion incident angle to the wafer uniform in the wafer plane. | 03-12-2015 |
20150075716 | SPATIALLY DISCRETE MULTI-LOOP RF-DRIVEN PLASMA SOURCE HAVING PLURAL INDEPENDENT ZONES - An RF plasma source has a resonator with its shorted end joined to the processing chamber ceiling and inductively coupled to two arrays of radial toroidal channels in the ceiling, the resonator having two radial zones and the two arrays of toroidal channels lying in respective ones of the radial zones. | 03-19-2015 |
20150083329 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - In a plasma processing apparatus including a processing room disposed in a vacuum vessel, a sample stage located in the processing room, a dielectric film disposed on the top surface of the sample stage and serving as the sample mounting surface of the sample stage, and a plurality of electrodes embedded in the dielectric film for chucking the sample to the dielectric film when supplied with electric power, a part of the sample is chucked by supplying electric power to at least one of the electrodes while the sample is mounted on the sample stage; the sample is heated up to a predetermined temperature; a larger part of the sample is chucked by supplying electric power to the other of the electrodes; and the processing of the sample using the plasma is initiated. | 03-26-2015 |
20150096683 | LED BASED OPTICAL SOURCE COUPLED WITH PLASMA SOURCE - An apparatus configured to remove metal etch byproducts from the surface of substrates and from the interior of a substrate processing chamber. A plasma is used in combination with a solid state light source, such as an LED, to desorb metal etch byproducts. The desorbed byproducts may then be removed from the chamber. | 04-09-2015 |
20150096684 | PLASMA PROCESSING APPARATUS - In a plasma processing apparatus, when pulse-modulating the high frequency power RF | 04-09-2015 |
20150114563 | PLASMA PROCESSING APPARATUS AND PROBE APPARATUS - A plasma processing apparatus includes a high frequency power supply turning a high frequency power ON/OFF and supplying the high frequency power to either one of upper and lower electrodes. A matching circuit and a power transmission line are provided between the high frequency power supply and the either one of the electrodes. A probe detector measures electrical characteristics on the power transmission line and generates measurement signals. A processing unit samples the measurement signals, generates sample values, The processing unit receives a pulse signal corresponding to ON/OFF switching of the high frequency power, generates sample values by sampling the measurement signals at a sampling interval for a period after the lapse of a mask period from an ascending timing thereof until a descending timing thereof, and selects sample values obtained through the last one or more sampling with respect to the descending timing, as detection values. | 04-30-2015 |
20150122420 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus can control a ratio between an input power during a pulse-on period and an input power during a pulse-off period by a matching operation of a matching device provided on a high frequency transmission line for supplying the high frequency power as a continuous wave without a power modulation. An impedance sensor | 05-07-2015 |
20150122421 | PLASMA PROCESSING APPARATUS - In a plasma processing apparatus, target values for feedback control to be applied to a progressive wave power PF as control parameters, i.e., control instruction values C | 05-07-2015 |
20150136325 | PLASMA PROCESSING USING MULTIPLE RADIO FREQUENCY POWER FEEDS FOR IMPROVED UNIFORMITY - A system for modifying the uniformity pattern of a thin film deposited in a plasma processing chamber includes a single radio-frequency (RF) power source that is coupled to multiple points on the discharge electrode of the plasma processing chamber. Positioning of the multiple coupling points, a power distribution between the multiple coupling points, or a combination of both are selected to at least partially compensate for a consistent non-uniformity pattern of thin films produced by the chamber. The power distribution between the multiple coupling points may be produced by an appropriate RF phase difference between the RF power applied at each of the multiple coupling points. | 05-21-2015 |
20150311040 | PLASMA PROCESSING APPARATUS - In a plasma processing apparatus including a processing chamber, a dielectric window for hermetically sealing the upper portion of the processing chamber, an induction antenna deployed above the dielectric window, a Faraday shield unit, and a control apparatus for controlling a first radio-frequency power source for supplying a radio-frequency power to the induction antenna, and a second radio-frequency power source for supplying a radio-frequency power to the Faraday shield unit, the Faraday shield unit includes a first Faraday shield having a first element, and a second Faraday shield having a second element deployed at a position adjacent to the first element, the control apparatus applying a time modulation to the radio-frequency powers that are respectively supplied to the first element and the second element, the phase of the first-element-supplied and time-modulated radio-frequency power being different from the phase of the second-element-supplied and time-modulated radio-frequency power. | 10-29-2015 |
20150348758 | IMPEDANCE MATCHING SLUG, IMPEDANCE MATCHING DEVICE, ELECTROMAGNETIC WAVE TRANSMISSION DEVICE, ELECTROMAGNETIC WAVE RADIATION DEVICE, AND PLASMA PROCESSING APPARATUS - An impedance matching slug that performs an impedance matching process in a waveguide is axially movably interposed between an outer conductor and an inner conductor of the waveguide. The impedance matching slug includes: a cylindrical first part and a cylindrical second part which are coupled to each other, wherein each of the first part and the second part has an inner circumferential surface facing the inner conductor and an outer circumferential surface facing the outer conductor, wherein the second part is disposed in the outside of the first part in such a manner that the inner circumferential surface of the second part is in contact with the outer circumferential surface of the first part, wherein one of the first part and the second part is constituted by a conductor, and wherein the other of the first part and the second part is constituted by a dielectric. | 12-03-2015 |
20150357210 | METHOD FOR CONTROLLING PLASMA PROCESSING APPARATUS - There is provided a method for controlling a plasma processing apparatus that eliminates a preliminary study on a resonance point while maintaining a low contamination and a high uniformity even in multi-step etching. In a method for controlling a plasma processing apparatus including the step of adjusting a radio frequency bias current carried to a counter antenna electrode, the method includes the steps of: setting a reactance of a variable element to an initial value; detecting a bias current carried to the counter antenna electrode; searching for a maximum value of the detected electric current; and adjusting a value of the reactance of the variable element from the maximum value to the set value and then fixing the value. | 12-10-2015 |
20160020072 | ION ENERGY BIAS CONTROL APPARATUS - This disclosure describes systems, methods, and apparatus for operating a plasma processing chamber. In particular, a periodic voltage function combined with an ion current compensation can be provided as a bias to a substrate support as a modified periodic voltage function. This in turn effects a DC bias on the surface of the substrate that controls an ion energy of ions incident on a surface of the substrate. A peak-to-peak voltage of the periodic voltage function can control the ion energy, while the ion current compensation can control a width of an ion energy distribution function of the ions. Measuring the modified periodic voltage function can provide a means to calculate an ion current in the plasma and a sheath capacitance of the plasma sheath. The ion energy distribution function can be tailored and multiple ion energy peaks can be generated, both via control of the modified periodic voltage function. | 01-21-2016 |
20160027615 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes: a plasma processing chamber; a radio frequency power source; a sample stage on which a sample is mounted; an electrode which is arranged inside the sample stage and electrostatically chucks the sample; a DC power source which applies a DC voltage to the electrode; and a control device which controls an output voltage of the DC power source so that an electric potential difference between an electric potential of the sample and an electric potential of an inner wall of the plasma processing chamber is reduced to an electric potential difference within a predetermined range during interruption of plasma discharge. | 01-28-2016 |
20160027617 | PLASMA GENERATING UNIT AND SUBSTRATE TREATING APPARATUS HAVING THE SAME - Disclosed are an apparatus for treating a substrate and a plasma generating device. The apparatus for treating a substrate includes a process chamber, a support unit supporting the substrate in the process chamber, a gas supply unit supplying a process gas in the process chamber, and a plasma generating unit generating a plasma from the process gas supplied in the process chamber, and the plasma generating unit includes a high frequency power supply, an antenna unit connected to the high frequency power via a supply line, and an impedance matcher connected between the high frequency power supply and the antenna unit via the supply line and matching impedance, and the impedance matcher includes a first sensor connected to an input terminal and measuring input impedance and a second sensor connected to an output terminal and measuring output impedance. | 01-28-2016 |
20160042921 | System for Coordinating Pressure Pulses and RF Modulation in a Small Volume Confined Process Reactor - A plasma processing system for processing semiconductor substrates is provided. The plasma processing system includes a plasma processing volume having a volume less than the processing chamber. The plasma processing volume is defined by a top electrode, a substrate support surface opposing the surface of the top electrode and a plasma confinement structure including at least one outlet port. A conductance control structure is movably disposed proximate to the at least one outlet port and capable of controlling an outlet flow through the at least one outlet port between a first flow rate and a second flow rate. The conductance control structure controls the outlet flow rate and an at least one RF source is modulated and at least one process gas flow rate is modulated corresponding to a selected processing state set by the controller during a plasma process. | 02-11-2016 |
20160056017 | PLASMA APPARATUS AND METHOD OF OPERATING THE SAME - A plasma apparatus includes a chuck disposed in a process chamber, a gas supply unit supplying a process gas into the process chamber, a plasma generating unit configured to generate plasma over the chuck, a direct current (DC) power generator applying a DC pulse signal to the chuck, and a sensor monitoring a state of the plasma and providing a sensing signal to the DC power generator. Each period of the DC pulse signal includes a negative pulse duration, a positive pulse duration, and a pulse-off duration. If a signal disturbance of the sensing signal occurs in an n | 02-25-2016 |
20160064194 | SEMICONDUCTOR FABRICATING APPARATUS AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE SAME - The disclosure provides a semiconductor fabricating apparatus and a method of fabricating a semiconductor device using the same. In some embodiments, the apparatus may synchronize low-frequency, high-frequency and direct current (DC) powers that are applied to an electrode. The low-frequency power may have a non-sinusoidal waveform. Thus, reliability and reproducibility of a semiconductor fabrication process may be improved. In other embodiments, the apparatus may include a first low-frequency power generator generating a first low-frequency power having a sinusoidal waveform and a second low-frequency power generator generating a second low-frequency power having a non-sinusoidal waveform. | 03-03-2016 |
20160071701 | RESONANT STRUCTURE FOR A PLASMA PROCESSING SYSTEM - A processing system is disclosed having a radio frequency (RF) power system coupled to a process chamber via a transmission line. The RF power system is configured to generate RF power at a RF operating frequency. The processing system also includes a resonant structure arranged within the plasma processing chamber that includes at least one resonant substructure configured to resonate according to at least two different resonant modes when at least one resonant frequency associated with at least one of the modes is at or near the RF operating frequency. | 03-10-2016 |
20160079037 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus can efficiently perform a pulse modulation method of switching a high frequency power to be used in a plasma process between a high level and a low level alternately according to a duty ratio of a modulation pulse. In this plasma processing apparatus, when performing a high/low pulse modulation on the high frequency power for plasma generation, if a weighted variable K is set to be 0.503-17-2016 | |
20160086771 | SILICON DIOXIDE-POLYSILICON MULTI-LAYERED STACK ETCHING WITH PLASMA ETCH CHAMBER EMPLOYING NON-CORROSIVE ETCHANTS - Multilayered stacks having layers of silicon interleaved with layers of a dielectric, such as silicon dioxide, are plasma etched with non-corrosive process gas chemistries. Etching plasmas of fluorine source gases, such as SF | 03-24-2016 |
20160126065 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a plasma generation unit for converting a processing gas into plasma by an inductive coupling. The plasma generation unit includes a first high frequency antenna formed of a vortex coil having open opposite endse and, at a central portion of a line between the open ends, a supply point of a high frequency power and a grounding point grounded through a capacitor; a second high frequency antenna formed of a planar vortex coil disposed between first and second high frequency antenna elements of the first high frequency antenna; and an impedance adjustment unit for adjusting a resonant frequency of a circuit viewed from a high frequency power supply toward the first high frequency antenna which is configured to have two resonant frequencies depending on adjustment of the impedance adjustment unit when the frequency of the high frequency power is changed. | 05-05-2016 |
20160172161 | PLASMA PROCESSING APPARATUS | 06-16-2016 |
20160181131 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD | 06-23-2016 |
20180025928 | HOLD CHECKING METHOD AND UNHOLD CHECKING METHOD FOR WAFER | 01-25-2018 |