Entries |
Document | Title | Date |
20080223521 | Plasma Source Coil and Plasma Chamber Using the Same - A plasma source coil includes a bushing arranged at a center part, and a plurality of unit coils arranged in the form of a concentric circle from a circumference of the bushing on the bases of the bushing. One end of each unit coil and one end of the bushing are commonly connected to a power-supply terminal, and the other end of each unit coil and the other end of the bushing are commonly connected to a ground terminal. | 09-18-2008 |
20080236744 | Plasma etching equipment - To provide a plasma processing equipment that can reduce the particles or contamination in a sample by suppressing the occurrence of an abnormal electric discharge during processing. The plasma processing equipment that employs a plasma process using a halogen-based gas in fabricating a semiconductor device, wherein a plasma sprayed coating film is applied to a surface of a well, such as a wall in a processing chamber, which plasma is in constant with, and wherein a conductor is incorporated into a material of this plasma sprayed coating film, thereby making the plasma sprayed coating film conductive. | 10-02-2008 |
20080264564 | Method of reducing the erosion rate of semiconductor processing apparatus exposed to halogen-containing plasmas - A ceramic article useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The ceramic article is formed from a combination of yttrium oxide and zirconium oxide. In a first embodiment, the ceramic article includes ceramic which is formed from yttrium oxide at a molar concentration ranging from about 90 mole % to about 70 mole %, and zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %. In a second embodiment, the ceramic article includes ceramic which is formed from zirconium oxide at a molar concentration ranging from about 96 mole % to about 94 mole %, and yttrium oxide at a molar concentration ranging from about 4 mole % to about 6 mole %. | 10-30-2008 |
20080264565 | Method and apparatus which reduce the erosion rate of surfaces exposed to halogen-containing plasmas - A ceramic article which is resistant to erosion by halogen-containing plasmas used in semiconductor processing. The ceramic article includes ceramic which is multi-phased, typically including two phase to three phases. The ceramic is formed from yttrium oxide at a molar concentration ranging from about 50 mole % to about 75 mole %; zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %; and at least one other component, selected from the group consisting of aluminum oxide, hafnium oxide, scandium oxide, neodymium oxide, niobium oxide, samarium oxide, ytterbium oxide, erbium oxide, cerium oxide, and combinations thereof, at a molar concentration ranging from about 10 mole % to about 30 mole %. | 10-30-2008 |
20080302482 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus includes a substrate processing part which processes a substrate and a particle remover which generates an electric field. The particle remover generates the electric field adjacent to a sidewall of a chamber of the substrate processing apparatus, and the electric field guides particles formed during which the substrate is processed, to prevent the particles from being attached onto the sidewall of the chamber. Thus, the substrate processing apparatus prevents defects of the substrate due to the particles, thereby improving product yield and productivity and reducing a manufacturing cost thereof. | 12-11-2008 |
20080314520 | Method and apparatus for manufacturing semiconductor device, and storage medium - The present invention provides a method for manufacturing a semiconductor device. In the method, a connection hole such as a via hole is formed in an interlayer insulating film by plasma etching with high etching uniformity regardless of the array density of connection holes. In the method, an upper layer film having a mask pattern is formed on the interlayer insulating film present on a substrate. A gas required for dehydration is then supplied to the substrate under the condition that an upper surface of the interlayer insulating film is exposed in order to remove moisture from the interlayer insulating film. A portion of the interlayer insulating film is etched to form a connection hole in which an electrical connection portion is to be embedded. | 12-25-2008 |
20090008033 | METHOD AND APPARATUS FOR SHAPING A MAGNETIC FIELD IN A MAGNETIC FIELD-ENHANCED PLASMA REACTOR - A magnetic field generator which provides greater control over the magnetic field is provided. The magnetic field generator has a plurality of overlapping main magnetic coil sections for forming a magnetic field generally parallel to the top surface of the supporting member. In other embodiments, sub-magnetic coil sections are placed symmetrically around the main magnetic coil sections. | 01-08-2009 |
20090084500 | PROCESSING APPARATUS, EXHAUST PROCESSING PROCESS AND PLASMA PROCESSING PROCESS - There is disclosed an exhaust processing process of a processing apparatus for processing a substrate or a film, which comprises after the processing of the substrate or the film, introducing a non-reacted gas and/or a by-product into a trap means comprising a filament comprised of a high-melting metal material comprising as a main component at least one of tungsten, molybdenum and rhenium; and processing the non-reacted gas and/or the by-product inside the trap means. This makes it possible to prevent lowering in exhaust conductance, to lengthen the maintenance cycle of the processing apparatus, and to provide a high-quality product (processed substrate or film). | 04-02-2009 |
20090095420 | PROCESSING APPARATUS, EXHAUST PROCESSING PROCESS AND PLASMA PROCESSING PROCESS - There is disclosed an exhaust processing process of a processing apparatus for processing a substrate or a film, which comprises after the processing of the substrate or the film, introducing a non-reacted gas and/or a by-product into a trap means comprising a filament comprised of a high-melting metal material comprising as a main component at least one of tungsten, molybdenum and rhenium; and processing the non-reacted gas and/or the by-product inside the trap means. This makes it possible to prevent lowering in exhaust conductance, to lengthen the maintenance cycle of the processing apparatus, and to provide a high-quality product (processed substrate or film). | 04-16-2009 |
20090151870 | Silicon carbide focus ring for plasma etching system - A high resistivity silicon carbide focus ring for use in a plasma etching system is described. The focus ring comprises an upper surface, a lower surface, an inner radial edge, and an outer radial edge, and is configured to surround a substrate on a substrate holder in a plasma processing system. The focus ring comprises high resistivity silicon carbide having a resistivity greater than or equal to about 100 ohm-cm. | 06-18-2009 |
20090159209 | PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS - The plasma etching method first forms a coating film on the inner surface of the chamber. Next, an etching process is performed on a wafer under a condition in which the coating film is formed, and thereafter a reaction product adhered onto the coating film in the etching process is removed together with the coating film. Each of these processes is implemented at a frequency in which the condition of the chamber inner surface is nearly always the same at the time of initiating the etching process. | 06-25-2009 |
20090165950 | Apparatus for treating substrate and method for transferring substrate using the same - A substrate treating apparatus and a method for transferring a substrate are provided. The substrate treating apparatus includes a first treating unit having a dual layer structure in which a first treating portion performing a coating process and a second treating portion performing a developing process are arranged in a vertical direction, a first buffer unit providing a place where substrates treated at the first treating portion stand by, a second buffer unit providing a place where the substrates treated at the second treating portion stand by, a second treating unit performing an exposing process, and an interface unit transferring the substrates between the first and second buffer units and the second treating unit. The interface unit includes a frame disposed adjacent to the first treating unit and a first substrate receiving portion disposed in the frame and receiving the substrates that are received in the first buffer unit and will be transferred to the second treating unit. | 07-02-2009 |
20090183832 | SEAL MECHANISM, SEAL TRENCH, SEAL MEMBER, AND SUBSTRATE PROCESSING APPARATUS - A seal mechanism that can prevent the occurrence of corrosion and abnormal discharge. The seal mechanism is disposed between first and second structural members having opposing surfaces. A first seal trench and a second seal trench are formed respectively in a first opposing surface of the first structural member and in a second opposing surface of the second structural member. A first seal member and a second seal member are housed respectively in the first and second seal trenches. The first seal member and the second seal member are brought into pressure contact with each other. These seal trenches have a first seal surface and a second seal surface from which aluminum is exposed, and further have first shut-off surface disposed between the first opposing surface and the first seal surface and a second shut-off surface disposed between the second opposing surface and the second seal surface. The first seal member has a first covering portion that covers the first shut-off surface, and the second seal member has a second covering portion that covers the second shut-off surface. | 07-23-2009 |
20090194233 | Component for semicondutor processing apparatus and manufacturing method thereof - A component ( | 08-06-2009 |
20090218042 | Methods For Producing Quartz Parts With Low Defect And Impurity Densities For Use In Semiconductor Processing - Described are methods and chemistries for preparing firepolished quartz parts for use in semiconductor processing. The quartz parts in need of preparation include newly manufactured parts as well as parts requiring refurbishment after previous use in semiconductor processing. The embodiments described avoid methods and chemistries that may damage the surfaces of the quartz parts and render the parts unfit for use in semiconductor processing. A method in accordance with one embodiment minimizes damage by limiting exposure of the quartz parts to hydrofluoric acid. A quartz part for use in semiconductor processing comprises a surface including a surface portion having a surface portion area to expose to a gas, wherein at least 95 percent of the surface portion area is free of defects and wherein the surface portion has less than E12 atoms per centimeter squared of aluminum. | 09-03-2009 |
20090288772 | Method and Apparatus for Processing Metal Bearing Gases - A method and apparatus for processing metal bearing gases involves generating a toroidal plasma in a plasma chamber. A metal bearing gas is introduced into the plasma chamber to react with the toroidal plasma. The interaction between the toroidal plasma and the metal bearing gas produces at least one of a metallic material, a metal oxide material or a metal nitride material. | 11-26-2009 |
20090294060 | Semiconductor Device Manufacturing Apparatus Capable Of Reducing Particle Contamination - A semiconductor device manufacturing apparatus includes a process chamber, a conveyance chamber, a conveyance robot, a lock chamber, and a heating unit or temperature adjusting unit for reducing adherence of particles onto a substance to be processed by a thermo-phoretic force. The heating unit enables control of a temperature of the substance to be processed to be higher than a temperature of an inner wall or structural body of the process chamber or the conveyance chamber or the conveyance robot or the lock chamber, in conveying the substance to be processed. The temperature adjusting unit enables adjustment of a temperature of an inner wall or structural body of the process chamber or the conveyance chamber or the lock chamber to be lower than a temperature of the substance to be processed, in conveying the substance to be processed. | 12-03-2009 |
20100065213 | ETCHING CHAMBER HAVING FLOW EQUALIZER AND LOWER LINER - A plasma processing chamber having a lowered flow equalizer and a lower chamber liner. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. By equalizing the flow of the processing gases evacuated from the chamber, a more uniform etching may occur. By electrically coupling the flow equalizer to the chamber liners, the RF return path from the flow equalizer may run along the chamber liners and hence, reduce the amount of plasma drawn below the substrate during processing. | 03-18-2010 |
20100089531 | VACUUM PROCESSING APPARATUS - Disclosed herein is a vacuum processing apparatus for performing a desired process for a substrate after establishing a vacuum atmosphere therein. More particularly, the vacuum processing apparatus includes a vacuum chamber, which is divided into a chamber body and an upper cover. The upper cover is configured to be easily opened away from and closed to the chamber body. | 04-15-2010 |
20100108261 | LOWER ELECTRODE ASSEMBLY OF PLASMA PROCESSING CHAMBER - A lower electrode assembly for use in a plasma processing chamber comprises a metal base and upper and lower edge rings. The metal base comprises metal plates brazed together and forming a brazed line on a lower side surface of the base, an edge ring support surface extending horizontally inwardly from the lower side surface and an upper side surface above the edge ring support surface. The upper edge ring comprises a lower surface mounted on the edge ring support surface and the lower edge ring surrounds the lower side surface of the base with a gap between opposed surfaces of the upper and lower edge rings and between the lower edge ring and the outer periphery of the base. The gap has an aspect ratio of total gap length to average gap width sufficient to impede arcing at the location of the braze line. | 05-06-2010 |
20100116436 | RING-SHAPED MEMBER AND METHOD FOR MANUFACTURING SAME - A ring-shaped member is used in a chamber of a substrate processing apparatus for performing a plasma processing on a substrate by generating a plasma in the chamber. The ring-shaped member includes a plurality of circular arc-shaped members made of single crystalline material and arranged along a circumferential direction of the ring-shaped member. Each of the circular arc-shaped members includes a surface exposed to the plasma when the plasma is generated in the chamber and an easily erodible crystal plane of the single crystalline material is not exposed at the surface. | 05-13-2010 |
20100163179 | Substrate Processing Apparatus - [Problem] To provide a substrate processing apparatus capable of preventing adherence of hydrogen fluoride to an inner surface the like of a chamber. | 07-01-2010 |
20100206480 | PROCESSES AND EQUIPMENTS FOR PREPARING F2-CONTAINING GASES, AS WELL AS PROCESSES AND EQUIPMENTS FOR MODIFYING THE SURFACES OF ARTICLES - Apparatus for safely and easily preparing an F | 08-19-2010 |
20100218894 | Method of Removing Metallic, Inorganic and Organic Contaminants From Chip Passivation Layer Surfaces - A method of removing and/or reducing undesirable contaminants removes residues including graphitic layers, fluorinate layers, calcium sulfate (CaSO | 09-02-2010 |
20100263795 | DEVICE FOR PROCESSING WELDING WIRE - A device for processing a wire having an outer surface and moving along a given path in a given direction. The device comprises a conductive contact tube surrounding said path and electrically engageable with the wire as it moves along the path and through the tube and a dielectric sleeve adjacent the contact tube and extending in the given direction from the contact tube and around the path to define an annular gas passage between the dielectric sleeve and the wire. An inlet for processing gas is adjacent the contact tube. A conductive electrode sleeve is around the dielectric sleeve so a high frequency, high voltage signal between said electrode sleeve and the contact tube creates a dielectric barrier discharge plasma of the progressing gas in the annular passage. | 10-21-2010 |
20110024040 | DEPOSIT PROTECTION COVER AND PLASMA PROCESSING APPARATUS - There are provided a deposit protection cover and a plasma processing apparatus capable of providing a simple solution to deposits adhered to a portion originally considered to be unreachable by plasma without increasing manufacturing cost. The deposit protection cover is detachably installed within a processing chamber for processing a substrate by generating plasma therein so as to cover a preset portion of the processing chamber. The cover includes an aluminum plate having a surface on which an anodic oxidation process is performed. Further, the anodic oxidation process is performed by using an electrode part protruded from a cover main body, an exposed area of an aluminum base surface is reduced by removing the electrode part after the anodic oxidation process is performed, and a cut surface formed after removing the electrode part is positioned at a region that is not directly exposed to the plasma within the processing chamber. | 02-03-2011 |
20110067814 | MULTI-PART ELECTRODE FOR A SEMICONDUCTOR PROCESSING PLASMA REACTOR AND METHOD OF REPLACING A PORTION OF A MULTI-PART ELECTRODE - An improved upper electrode system has a multi-part electrode in which a central portion of the electrode having high wear is replaceable independent of an outer peripheral portion of the electrode. The upper electrode can be used in plasma processing systems for processing semiconductor substrates, such as by etching or CVD. The multi-part upper electrode system is particularly useful for large size wafer processing chambers, such as 300 mm wafer processing chambers for which monolithic electrodes are unavailable or costly. | 03-24-2011 |
20110083806 | Plasma Resistant Processing Apparatus - There is provided a processing apparatus undergoing various treatments using plasma and protected from plasma so as not to be damaged. The processing apparatus is one using plasma and having a protective layer comprising a fluorine-containing elastomer on the whole or a part of a surface exposed to plasma in the processing apparatus. | 04-14-2011 |
20110088846 | PLASMA SOURCE - A plasma source is disclosed. The plasma source includes: a disc-shaped core; “m” number of hubs, “m” being a positive integer, each hub extending a certain length in a horizontal spiral from the core and the hubs being arranged rotationally symmetrical to each other; and main coils each, in a continuous extension from an end of each of the hubs, winding a/m times in a horizontal spiral followed by a certain length of radial extension, winding a/m times in another horizontal spiral followed by a certain length of radial extension, and continuing this sequence in multiple repeats, and wherein “a” and “m” are positive integers. Therefore, the present disclosure contributes to the uniformity of the process under plasma by inducing uniform magnetic and electric fields presented over all. | 04-21-2011 |
20110094679 | ELECTRODE ASSEMBLY FOR THE REMOVAL OF SURFACE OXIDES BY ELECTRON ATTACHMENT - An apparatus and a method comprising same for removing metal oxides from a substrate surface are disclosed herein. In one particular embodiment, the apparatus comprises an electrode assembly that has a housing that is at least partially comprised of an insulating material and having an internal volume and at least one fluid inlet that is in fluid communication with the internal volume; a conductive base connected to the housing comprising a plurality of conductive tips that extend therefrom into a target area and a plurality of perforations that extend therethrough and are in fluid communication with the internal volume to allow for a passage of a gas mixture comprising a reducing gas. | 04-28-2011 |
20110100552 | RADIO FREQUENCY (RF) GROUND RETURN ARRANGEMENTS - A radio frequency (RF) ground return arrangement for providing a low impedance RF return path for a RF current within a processing chamber of a plasma processing chamber during processing of a substrate is provided. The RF ground return arrangement includes a set of confinement rings, which is configured to surround a confined chamber volume that is configured for sustaining a plasma for etching the substrate during substrate processing. The RF ground return arrangement also includes a lower electrode support structure. The RF ground return arrangement further includes a RF contact-enabled component, which provides a RF contact between the set of confinement rings and the lower electrode support structure such that the low impedance RF return path facilitates returning the RF current back to an RF source. | 05-05-2011 |
20110198032 | PLASMA TREATMENT APPARATUS AND PLASMA ANTENNA - According to one embodiment of the present invention, a plasma treatment apparatus comprises: a chamber having an inner space in which processes for an object to be treated are performed; and an antenna which is arranged to cover the side part of the chamber, and which forms electric fields in said inner space to generate plasma from the source gas supplied in the inner space. The antenna includes a helical antenna which is formed into a helical shape from one side of the chamber toward the other side of the chamber along a first rotation direction, and which has a current flowing in the first rotation direction; an extension antenna which is connected to one end of the helical antenna positioned at said one side of the chamber, and which has a current flowing in the direction opposite to the first rotation direction; and a connection antenna for interconnecting the extension antenna and the helical antenna. | 08-18-2011 |
20110209826 | SUBSTRATE PROCESSING METHOD, COMPUTER-READABLE STORAGE MEDIUM, AND SUBSTRATE PROCESSING SYSTEM - The substrate processing system includes a measuring apparatus that measures any of film thickness, a refractive index, an absorption coefficient, and warpage. The system includes an apparatus for performing photolithography on the substrate to form a resist pattern and an etching apparatus that etches a processing film. A control unit includes a first relation between an initial condition and a dimension of the pattern of the processing film and a second relation between a processing condition of the predetermined processing and the dimension of the pattern of the processing film. The control unit estimates a dimension of the pattern of the processing film after the etching treatment from the first relation based on a measurement result and corrects the processing condition of the predetermined processing in the photolithography or the etching from the second relation based on an estimation result of the dimension of the pattern. | 09-01-2011 |
20110220285 | METHODS AND SYSTEMS FOR TEXTURING CERAMIC COMPONENTS - Embodiments of the present invention provide methods for forming a hardened and roughened ceramic component. Specific steps include forming a sintered ceramic component, texturing the surface of the sintered ceramic component, and firing the component to harden it. The resulting ceramic component may have a textured surface, and in a specific embodiment, the textured surface has a roughness of about 100 to about 2000 μin Ra. | 09-15-2011 |
20110232843 | SUBSTRATE PROCESSING APPARATUS WITH COMPOSITE SEAL - A seal for sealing an interface between a container and a lid of a process chamber. The seal comprises a first seal element and a second seal element that are arranged to seal the interface in series, with the second seal element being situated to encounter processing activity upstream of the fist seal element. The first seal element has a deflectable portion and a protrusion extending radially from the deflectable portion. The second seal element has a radially extending recess in which the protrusion of the first seal element is received. The protrusion and recess interlock to restrict separation and/or rotation of the first and second seal elements. Inclined surfaces of the first seal element interact with the second seal element to apply axial sealing forces to sealing surfaces of the second seal member. | 09-29-2011 |
20110253310 | METHODS AND APPARATUS FOR AN INDUCTION COIL ARRANGEMENT IN A PLASMA PROCESSING SYSTEM - An antenna arrangement in a plasma processing system for providing plasma uniformity across a substrate during substrate processing is provided. The arrangement includes a plurality of circular antenna assemblies. Each circular antenna assembly of the plurality of circular antenna assemblies includes a set of non-circular coils. Each non-circular coil of the set of non-circular coils is offset at a predetermined angle in an azimuthal direction. The arrangement also includes a set of power generators for powering the plurality of circular antenna assemblies. | 10-20-2011 |
20110259519 | COATING METHOD FOR GAS DELIVERY SYSTEM - A method of coating the inner surfaces of gas passages of a gas delivery system for a plasma process system such as a plasma etching system includes (a) flowing a fluidic precursor of a corrosion-resistant material through the gas passages and depositing a layer of the fluidic precursor to completely coat the inner surfaces of the gas passages; (b) removing excess fluidic precursor from the inner surfaces; (c) curing the deposited layer of the fluidic precursor to form a corrosion-resistant material coating. | 10-27-2011 |
20110303361 | Outside Air Shut-Off Container and Pressure-Reducible Processing Apparatus - Because an O-ring of synthetic resin is pyrolyzed in the atmosphere at a high temperature of 150° C. or more, the airtightness cannot be maintained. In an outside air shut-off container according to the present invention, an inert gas is supplied between an O-ring, which hermetically seals a process chamber and a cover member, and the outside air while a gas passage formed between the O-ring and the outside air is covered with a sealing cover. Additionally, an aluminum oxide layer is formed on a contact surface of the O-ring to increase the pyrolysis temperature of the O-ring. | 12-15-2011 |
20110308732 | Electrode Carrier Assemblies - In accordance with one embodiment of the present disclosure, an electrode carrier assembly is provided including an electrode carrying annulus and a plurality of electrode mounting members. The electrode carrying annulus includes an electrode containment sidewall that forms an inner or outer radius of the electrode carrying annulus. The electrode carrying annulus further includes a plurality of radial sidewall projections that project radially away from the electrode containment sidewall. The radial sidewall projections each include an upward-facing tapered spacer including an upward-facing micro-mesa. The electrode mounting members each include a downward-facing tapered spacer including a downward-facing micro-mesa. The electrode mounting members are rotatably engaged with the electrode carrying annulus, and are configured to rotate between a free position and a bracketed position. | 12-22-2011 |
20120000605 | CONSUMABLE ISOLATION RING FOR MOVABLE SUBSTRATE SUPPORT ASSEMBLY OF A PLASMA PROCESSING CHAMBER - A consumable isolation ring of a movable substrate support assembly is described. The consumable isolation ring is configured to be supported on a step of a movable ground ring fit around a fixed ground ring. The consumable isolation ring is configured to electrically isolate the movable ground ring from a dielectric ring of the movable substrate support assembly. | 01-05-2012 |
20120000606 | PLASMA UNIFORMITY SYSTEM AND METHOD - A plasma processing tool comprises a plasma chamber configured to generate a plasma from a gas introduced into the chamber where the generated plasma has an electron plasma frequency. A plurality of electrodes disposed within the chamber. Each of the electrodes configured to create a rapidly-rising-electric-field pulse in a portion of the plasma contained in the chamber. Each of said rapidly-rising-electric-field pulses having a rise time substantially equal to or less than the inverse of the electron plasma frequency and a duration of less than the inverse of the ion plasma frequency. In this manner, the electron energy distribution in the generated plasma may be spatially and locally modified thereby affecting the density, composition and temperature of the species in the plasma and consequently the uniformity of the density and composition of ions and neutrals directed at a target substrate. | 01-05-2012 |
20120097328 | APPARATUS FOR FABRICATING SEMICONDUCTOR WAFERS AND APPARATUS FOR THE DEPOSITION OF MATERIALS BY EVAPORATION USING A MOLECULAR BEAM - Described is equipment for depositing materials by evaporation using a molecular beam and equipment for fabricating semiconductor wafers, including a central conveyor module having a plurality of lateral ports capable of functioning under vacuum pressure conditions above 10 | 04-26-2012 |
20120103518 | FILM FORMATION APPARATUS - A film formation apparatus includes a gas supply mechanism for supplying an aminosilane-based gas, and a silane-based gas that does not include an amino group. Processes of forming a seed layer on a surface of the insulation film having the opening reaching the conductive substance and on a bottom surface of the opening by supplying the aminosilane-based gas into the process chamber, and forming a silicon film on the seed layer by supplying the silane-based gas that does not include the amino group into the process chamber, are sequentially performed in the process chamber. | 05-03-2012 |
20120132365 | SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS - There is provided a semiconductor device manufacturing apparatus capable of recovering a damage of a low dielectric insulating film exposed to CO | 05-31-2012 |
20120180953 | PLASMA PROCESSING APPARATUS AND WAVE RETARDATION PLATE USED THEREIN - A plasma processing apparatus includes a planar antenna member, which introduces electromagnetic waves generated by means of an electromagnetic wave generator into a processing chamber; a waveguide which supplies the electromagnetic waves to the planar antenna member; and a wave retardation plate, which is provided on the planar antenna member, and changes the wavelength of the electromagnetic waves supplied from the waveguide; a cover member which covers the wave retardation plate and the planar antenna member from above. The wave retardation plate is configured using a dielectric material, and the permittivity of the region between the planar antenna member and the cover member is not uniform on the plane parallel to the upper surface of the planar antenna member. | 07-19-2012 |
20120199286 | PLASMA TREATING APPARATUS - A first electrode, a second electrode and a third electrode are provided in a middle of a passage. The second electrode is provided on an upstream side of the first electrode, and the third electrode is provided on a downstream side of the first electrode. A connecting line connects the first electrode to a first pole of a pulsed power supply, and connects the second electrode and the third electrode to a second pole of the pulsed power supply. The first electrode crosses a first gas passing surface and occupies a part of the first gas passing surface. The second electrode and the third electrode cross a second gas passing surface and a third gas passing surface and occupy a part of the second gas passing surface and the third gas passing surface respectively. | 08-09-2012 |
20120205045 | SEMICONDUCTOR MACHINE AND CLEANING PROCESS THEREOF - A semiconductor machine and a cleaning process are provided. The semiconductor machine includes a chamber and a cleaning module. The cleaning process includes the following steps. Firstly, the semiconductor machine is used to perform a semiconductor manufacturing process, wherein a titanium-based material is etched in the semiconductor manufacturing process. Then, a cleaning task is activated to clean the semiconductor machine by using a cleaning agent including a gas mixture of a fluoride compound and oxygen. | 08-16-2012 |
20120285619 | ELECTROSTATIC CHUCK HAVING A PLURALITY OF HEATER COILS - An electrostatic chuck for receiving a substrate in a substrate processing chamber comprises a ceramic puck having a substrate receiving surface having a plurality of spaced apart mesas, an opposing backside surface, and central and peripheral portions. A plurality of heat transfer gas conduits traverse the ceramic puck and terminate in ports on the substrate receiving surface to provide heat transfer gas to the substrate receiving surface. An electrode is embedded in the ceramic puck to generate an electrostatic force to retain a substrate placed on the substrate receiving surface. A plurality of heater coils are also embedded in the ceramic puck, the heaters being radially spaced apart and concentric to one another. | 11-15-2012 |
20120305183 | SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS - A semiconductor device manufacturing apparatus includes: a first pattern forming unit for forming a first pattern by patterning a first mask material layer; a trimming unit for reducing a width of the first pattern to a predetermined width; a boundary layer forming unit for forming a boundary layer, on a surface of the first pattern; a second mask material layer forming unit for forming a second mask material layer on a surface of the boundary layer; a second mask material removing unit for removing a part of the second mask material layer to expose top portions of the boundary layer; and a boundary layer etching unit for exposing the first pattern and forming a second pattern having the second mask material layer at a top portion thereof by etching the boundary layer. | 12-06-2012 |
20120312472 | SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS - A semiconductor device manufacturing apparatus includes: a first pattern forming unit for forming a first pattern by patterning a first mask material layer; a boundary layer forming unit for forming a boundary layer at sidewall portions and top portions of the first pattern; a second mask material layer forming unit for forming a second mask material layer so as to cover a surface of the boundary layer; a second mask material removing unit for removing a part of the second mask material layer to expose top portions of the boundary layer; a boundary layer etching unit for forming a second pattern by etching and removing the boundary layer and forming a void between the sidewall portions of the first pattern and the second mask material layer; and a trimming unit for reducing a width of the first pattern and a width of the second pattern to predetermined widths. | 12-13-2012 |
20120325404 | PLASMA PROCESSING APPARATUS - An inductively-coupled-plasma (ICP) type plasma processing apparatus is provided. The plasma processing includes an antenna which is substantially straight in a plan view of the antenna. A plasma is generated for performing a plasma treatment to a substrate when a high frequency current is applied to the antenna to form an electric field in a vacuum container. The antenna includes two go-and-return conductors closely disposed to each other in an up-down direction, wherein the up-down direction is perpendicular to a surface of the substrate, and the high frequency current is applied to flow in opposite directions between the two go-and-return conductors. An interval is defined by a distance between the two go-and-return conductors in the up-down direction, varies in a longitudinal direction of the antenna. | 12-27-2012 |
20130118686 | TEMPERATURE CONTROLLED CHAMBER LINER - A liner for a semiconductor processing chamber and a semiconductor processing chamber are provided. In one embodiment, a liner for a semiconductor processing chamber includes a body having an outwardly extending flange. A plurality of protrusions extend from a bottom surface of the flange. The protrusions have a bottom surface defining a contact area that is asymmetrically distributed around the bottom surface of the flange. | 05-16-2013 |
20130126092 | Plasma Processing Assemblies Including Hinge Assemblies - In one embodiment, a plasma processing assembly may include an upper process body coupled to a hinge body and a lower process body coupled to a base hinge member. The hinge body can be pivotally engaged with the base hinge member. A self locking latch can be pivotally engaged with the base hinge member. When the hinge body is rotated around the first axis of rotation, the protruding latch engagement member can contact the self locking latch and can rotate the self locking latch around the second axis of rotation opposite to the bias direction. The self locking latch can rotate around the second axis of rotation in the bias direction and can block the hinge body from rotating around the first axis of rotation. | 05-23-2013 |
20130168019 | SYSTEM FOR SPLITTING OF BRITTLE MATERIALS WITH TRENCHING TECHNOLOGY - One aspect related to a system configured to split a processed semiconductor wafer. The semiconductor wafer comprises a brittle material and has at least one layer formed on a first surface of the semiconductor wafer. At least one trench is etched in the first surface and through the at least one layer thereby forming a line on the surface where at least some of the brittle material is removed. Provided are means for splitting the semiconductor wafer into separate pieces along the line. | 07-04-2013 |
20130192756 | SEALING APPARATUS FOR A PROCESS CHAMBER - A sealing apparatus is provided herein. In some embodiments, the sealing apparatus includes an annular body including a first portion having a circular cross-section and a second portion extending radially outward from the first portion, wherein the second portion has a rectangular cross-section. In some embodiments, a sealing apparatus includes a body configured to be retained in a recess of a first surface; an arm extending from the body away from the first surface and configured to provide a force when deflected towards the body by a second surface to form a seal between the first surface and the second surface. | 08-01-2013 |
20130240142 | ISOLATION BETWEEN A BAFFLE PLATE AND A FOCUS ADAPTER - A device is provided for preventing contact between a baffle plate and a focus adapter in the upper chamber of an ashing system. The device includes a housing, a baffle plate including a plurality of holes, a focus adapter between the housing and the baffle plate, a plurality of spacers aligned with the holes, and a plurality of fasteners securing the spacers between the baffle plate and the housing, wherein the spacers isolate the focus adapter from contacting the baffle plate. | 09-19-2013 |
20130248112 | VACUUM TRAP - A vacuum trap, a plasma etch system using the vacuum trap and a method of cleaning the vacuum trap. The vacuum trap includes a baffle housing; and a removable baffle assembly disposed in the baffle housing, the baffle assembly comprising a set of baffle plates, the baffle plates spaced along a support rod from a first baffle plate to a last baffle plate, the baffle plates alternately disposed above and below the support rod and alternately disposed in an upper region and a lower region of the baffle housing. | 09-26-2013 |
20130255881 | INTERNAL MEMBER OF A PLASMA PROCESSING VESSEL - An internal member of a plasma processing vessel includes a base material and a film formed by thermal spraying of ceramic on a surface of the base material. The film is formed of ceramic which includes at least one kind of element selected from the group consisting of B, Mg, Al, Si, Ca, Cr, Y, Zr, Ta, Ce and Nd. In addition, at least a portion of the film is sealed by a resin. | 10-03-2013 |
20130292055 | INSULATED DIELECTRIC WINDOW ASSEMBLY OF AN INDUCTIVELY COUPLED PLASMA PROCESSING APPARATUS - An insulated dielectric window assembly comprising a dielectric window of an inductively coupled plasma processing apparatus; an upper polymeric ring, and a lower polymeric ring. The upper polymeric ring insulates the outer edge of the dielectric window from a cooler ambient atmosphere and the lower polymeric ring insulates the lower surface of the dielectric window from a chamber surface supporting the window. | 11-07-2013 |
20130299088 | LASER AND PLASMA ETCH WAFER DICING USING WATER-SOLUBLE DIE ATTACH FILM - Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer. The semiconductor wafer is disposed on a water-soluble die attach film. The mask covers and protects the integrated circuits. The mask is patterned with a laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to form singulated integrated circuits. The water-soluble die attach film is then patterned with an aqueous solution. | 11-14-2013 |
20130327480 | SHOWERHEAD INSULATOR AND ETCH CHAMBER LINER - The present invention generally comprises a showerhead insulator for electrically isolating a showerhead assembly from a processing chamber wall, a chamber liner assembly for lining a processing chamber, a lower chamber liner for lining an evacuation area of a processing chamber, and a flow equalizer for ensuring a uniform evacuation of a processing chamber. When processing a substrate within an etching chamber, the showerhead needs to be electrically isolated from ground. A showerhead insulator may insulate the showerhead from ground while also preventing plasma from entering the volume that it occupies. A chamber liner may protect the chamber walls from contamination and reduce chamber cleaning. A flow equalizer will permit processing gases to be evenly pulled into the evacuation channel rather than a disproportionate flow into the evacuation channel. A lower liner can aid in uniformly drawing the vacuum and protecting the chamber walls from contamination. | 12-12-2013 |
20140027058 | CMOS WITH CHANNEL P-FINFET AND CHANNEL N-FINFET HAVING DIFFERENT CRYSTALLINE ORIENTATIONS AND PARALLEL FINS - An integrated circuit fabrication apparatus is configured to fabricate an integrated circuit with at least one p-FinFET device and at least one n-FinFET device. A bonding control processor is configured to bond a first silicon layer having a first crystalline orientation to a second silicon layer having a second crystalline orientation that is different from the first crystalline orientation. A material growth processor is configured to form a volume of material extending through the first silicon layer from the second layer up to the surface of first layer. The material has a crystalline orientation that substantially matches the crystalline orientation of second layer. An etching processor is configured to selectively etch areas of the surface of the first layer that are outside of the region to create a first plurality of fins and areas inside the region to create a second plurality of fins. | 01-30-2014 |
20140034238 | Semiconductor Processing Device - Embodiments of a semiconductor processing apparatus are disclosed. The semiconductor processing apparatus includes a micro chamber for tightly accommodating and processing a semiconductor wafer. The micro chamber includes an upper chamber portion defining an upper working surface and a lower chamber portion defining a lower working surface. The upper chamber portion and the lower chamber portion are relatively movable between an open position for loading and removing the semiconductor wafer and a closed position for tightly accommodating the semiconductor wafer. The semiconductor processing apparatus adopts a modified column device, a lower chamber portion and a balance correction device to achieve easy operation and maintenance, better prevention of chemical processing fluid leakage, and corrosion-resistant design. | 02-06-2014 |
20140053978 | Barrier Layer Removal Method and Apparatus - A method and apparatus integrating semiconductor manufacturing processes of stress free electrochemical copper polishing (SFP), removal of the Tantalum oxide or Titanium oxide formed during SFP process and XeF | 02-27-2014 |
20140060735 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus is disclosed. The substrate processing apparatus includes: a first process unit including a plurality of first process stations configured to perform a first process in a first atmosphere; a second process unit including a plurality of second process stations configured to perform a second process in a second atmosphere different from the first atmosphere; and a transformation unit between the first process unit and the second process unit. The first process unit, the transformation unit, and the second process unit are arranged in a line. The transformation unit includes a plurality of transformation stations configured to transform an atmosphere between the first atmosphere and the second atmosphere. Thus, the efficiency of processing a substrate can be improved, and the area or length in which the substrate processing apparatus is installed can be reduced. | 03-06-2014 |
20140158299 | Multi-Chamber Semiconductor Processing Device - The present disclosure provides a multi-chamber semiconductor processing apparatus including at least two micro chambers for receiving and processing a semiconductor wafer. Each micro chamber includes an upper chamber portion defining an upper working surface and a lower chamber portion defining a lower working surface. The upper chamber portion and the lower chamber portion are relatively movable between an open position for loading or removing the semiconductor wafer and a closed position for receiving and processing the semiconductor wafer. Compared with the prior art, the multi-chamber semiconductor processing apparatus of the present disclosure are provided with a plurality of micro chambers in a longitudinal direction, which enables the multi-chamber semiconductor processing apparatus to carry out single-wafer chemical processing on a plurality of semiconductor wafers at the same time. | 06-12-2014 |
20140182785 | MULTI-FUNCTIONAL APPARATUS FOR TESTING AND ETCHING SUBSTRATE AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME - A multi-functional apparatus for testing and etching a substrate capable of increasing spatial efficiency and manufacturing efficiency by performing testing and etching operations in a same chamber body and a substrate processing apparatus including the same, the multi-functional apparatus including a chamber body having an entrance into which the substrate is injected in one of its sides and an exit from which the substrate is ejected in another one of its sides; a transfer unit disposed inside of the chamber body and for transferring the injected substrate in a direction from the entrance to the exit; a laser etching unit disposed on an upper portion of the transfer unit and for etching a part of the substrate disposed on the transfer unit; and a testing unit for testing the substrate disposed on the transfer unit. | 07-03-2014 |
20140238604 | LIFE ENHANCEMENT OF RING ASSEMBLY IN SEMICONDUCTOR MANUFACTURING CHAMBERS - The present invention generally relates to a ring assembly that may be used in an etching or other plasma processing chamber. The ring assembly generally includes an inner ring body having a top planar surface and a bottom planar surface, and an outer ring body having a top surface, a bottom surface substantially parallel to the top surface, and an inside surface that extends between the top surface and the bottom surface, the inside surface having a roof covering a portion of the inner ring body when the inner ring body is disposed adjacent the roof, wherein the inner ring body can be flipped into a different position so that a portion of the inner ring body that is not covered by the roof provides a substantially planar surface. | 08-28-2014 |
20140262024 | SUBSTRATE TREATMENT SYSTEMS USING SUPERCRITICAL FLUID - Substrate treatment systems are provided. The substrate treatment systems may include a treating device configured to treat a substrate with a supercritical fluid, and a supplying device configured to supply the supercritical fluid to the treating device. The treating device may include a supercritical process zone in which the substrate is treated with the supercritical fluid, and a pre-supercritical process zone in which the supercritical fluid is expanded and then provided into the supercritical process zone to create a supercritical state in the supercritical process zone. | 09-18-2014 |
20140262025 | PLASMA PROCESSING APPARATUS AND PLASMA ETCHING APPARATUS - Uniformity of a plasma process on a surface of a substrate is to be improved. In a plasma processing apparatus that processes a substrate by generating plasma from a processing gas introduced in a processing container, a ratio between an introducing amount of the processing gas introduced to a center portion of the substrate received in the processing container and an introducing amount of the processing gas introduced to a peripheral portion of the substrate received in the processing container is changed during a plasma process. Accordingly, a variation in an etching rate or the like between the center portion and the peripheral portion of the substrate may be reduced. Therefore, uniformity of the plasma process on the surface of the substrate is improved. | 09-18-2014 |
20140290857 | SUBSTRATE PROCESSING APPARATUS - In a method for forming a stacked substrate of a MOS (Metal Oxide Semiconductor) structure including an oxide film serving as a gate insulating film formed on a semiconductor material layer having a film or substrate shape; and a conductive film serving as a gate electrode formed on the oxide film, a polysilane film on the semiconductor material layer is formed by coating a polysilane solution on a surface of a substrate to which the semiconductor material layer is exposed. A film containing metal ions is formed on the polysilane film by coating a metal salt solution thereon, and the polysilane film and the film containing metal ions are respectively modified into a polysiloxane film and a film containing fine metal particles to form the stacked substrate. | 10-02-2014 |
20140338834 | MAGNESIUM ALUMINATE-BASED SINTERED BODY AND SEMICONDUCTOR MANUFACTURING APPARATUS MEMBER - A magnesium aluminate-based sintered body and a member for a semiconductor manufacturing apparatus. The magnesium aluminate-based sintered body contains magnesium aluminate as a main crystal phase. The magnesium aluminate-based sintered body also contains Zn and K such that a sum of zinc content in terms of ZnO and potassium content in terms of K | 11-20-2014 |
20140367041 | WAFER DICING USING FEMTOSECOND-BASED LASER AND PLASMA ETCH - Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer, the mask including a layer covering and protecting the integrated circuits. The mask and a portion of the semiconductor wafer are patterned with a laser scribing process to provide a patterned mask and to form trenches partially into but not through the semiconductor wafer between the integrated circuits. Each of the trenches has a width. The semiconductor wafer is plasma etched through the trenches to form corresponding trench extensions and to singulate the integrated circuits. Each of the corresponding trench extensions has the width. | 12-18-2014 |
20150047785 | Plasma Processing Devices Having Multi-Port Valve Assemblies - A plasma processing device may include a plasma processing chamber, a plasma electrode assembly, a wafer stage, a plasma producing gas inlet, a plurality of vacuum ports, at least one vacuum pump, and a multi-port valve assembly. The multi-port valve assembly may comprise a movable seal plate positioned in the plasma processing chamber. The movable seal plate may comprise a transverse port sealing surface that is shaped and sized to completely overlap the plurality of vacuum ports in a closed state, to partially overlap the plurality of vacuum ports in a partially open state, and to avoid substantial overlap of the plurality of vacuum ports in an open state. The multi-port valve assembly may comprise a transverse actuator coupled to the movable seal plate and a sealing actuator coupled to the movable seal plate. | 02-19-2015 |
20150047786 | SEALING GROOVE METHODS FOR SEMICONDUCTOR EQUIPMENT - In one embodiment, a surface having a sealing groove formed therein. The sealing groove is configured to accept an elastomeric seal. The sealing groove includes a first portion having a full dovetail profile and at least on a second portion having a half dovetail profile. | 02-19-2015 |
20150075714 | PLASMA SPRAY COATING ENHANCEMENT USING PLASMA FLAME HEAT TREATMENT - A method for forming a plasma resistant ceramic coating on an article includes placing the article into a chamber or spray cell of a plasma spraying system. A ceramic powder is then fed into the plasma spraying system at a powder feed rate, and a plasma resistant ceramic coating is deposited onto at least one surface of the article in a plasma spray process by the plasma spray system. The plasma spray system is then used to perform an in-situ plasma flame heat treatment of the plasma resistant ceramic coating to form crust on the plasma resistant ceramic coating. | 03-19-2015 |
20150107768 | POLYCRYSTALLINE CaF2 MEMBER, MEMBER FOR PLASMA TREATMENT DEVICE, PLASMA TREATMENT DEVICE, AND METHOD FOR PRODUCING FOCUSING RING - A polycrystalline CaF | 04-23-2015 |
20150303036 | SUBSTRATE TREATMENT APPARATUS INCLUDING SEALING MEMBER HAVING ATYPICAL SECTION - A substrate treatment apparatus includes a seal on at least one of upper or lower chambers of a process chamber. The seal hermetically closes the substrate treatment region, and may be at a location to prevent a gap from forming between the upper and lower chambers. The lower chamber includes an inner wall and an outer wall defining a groove including the seal. The inner wall has a top surface lower than that of the outer wall. The seal has an atypical cross-sectional shape with a recess facing the substrate treatment region. | 10-22-2015 |
20150311042 | SUBSTRATE TREATING APPARATUS - Provided is a substrate treating apparatus which treats a substrate using plasma. The substrate treating apparatus includes a processing chamber having an inner space in which process treatment is performed on a substrate, a cover member coupled to the processing chamber by a hinge part and rotating upwardly and downwardly with respect to the hinge part to open/close the processing chamber, and a close preventing member disposed on a sidewall of the cover member to prevent the cover member from being closed during upward rotation of the cover member. | 10-29-2015 |
20160111255 | Separation of Chips on a Substrate - Various methods and apparatuses are provided relating to separation of a substrate into a plurality of parts. For example, first a partial separation is performed and then the partially separated substrate is completely separated into a plurality of parts. | 04-21-2016 |
20160136676 | Print Methodology for Applying Polymer Materials to Roofing Materials to Form Nail Tabs or Reinforcing Strips - A method and apparatus for applying nail tabs to roofing and building cover materials involving the steps of depositing tab material onto the surface of the roofing or building cover material, during or after its manufacture, resulting in a plurality of nail tabs from a lamination roll, and bonding the tabs to the surface of the material by pressure between the lamination roll and said surface. The method also encompasses depositing the tab material or pre-formed tads by a pressure roll in contact with said surface. The tabs preferably ate made substantially of a polymer material and may be hardened or cured by ultra-violet or visible light. The tabs may also be pre-formed and have adhesive backing. | 05-19-2016 |
20160141188 | INTERNAL PLASMA GRID FOR SEMICONDUCTOR FABRICATION - The embodiments disclosed herein pertain to improved methods and apparatus for etching a semiconductor substrate. A plasma grid assembly is positioned in a reaction chamber to divide the chamber into upper and lower sub-chambers. The plasma grid assembly may include one or more plasma grids having slots of a particular aspect ratio, which allow certain species to pass through from the upper sub-chamber to the lower sub-chamber. Where multiple plasma grids are used, one or more of the grids may be movable, allowing for tenability of the plasma conditions in at least the lower sub-chamber. In some cases, an electron-ion plasma is generated in the upper sub-chamber. Electrons that make it through the grid to the lower sub-chamber are cooled as they pass through. In some cases, this results in an ion-ion plasma in the lower sub-chamber. | 05-19-2016 |