| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 136262000 | Gallium containing | 83 |
| 20130025680 | INK DEPOSITION PROCESSES FOR PHOTOVOLTAIC ABSORBERS - Processes for making a process for making a photovoltaic absorber by depositing various layers of components on a substrate and converting the components into a thin film photovoltaic absorber material. Processes for depositing an ink containing compounds having the formula M | 01-31-2013 |
| 20110192463 | CIGS SOLAR CELL STRUCTURE AND METHOD FOR FABRICATING THE SAME - A copper/indium/gallium/selenium (CIGS) solar cell structure and a method for fabricating the same are provided. The CIGS solar cell structure includes a substrate, a molybdenum thin film layer, an alloy thin film layer, and a CIGS thin film layer. The alloy thin film layer is provided between the molybdenum thin film layer and the CIGS thin film layer, serving as a conductive layer of the CIGS solar cell structure. The alloy thin film layer is composed of a variety of high electrically conductive materials (such as molybdenum, copper, aluminum, and silver) in different atomic proportions. | 08-11-2011 |
| 20130074934 | MULTI-LAYER BACK SURFACE FIELD LAYER IN A SOLAR CELL STRUCTURE - Photovoltaic (PV) cell structures are disclosed. In one example embodiment, a PV cell includes an emitter layer, a base layer adjacent to the emitter layer, and a back surface field (BSF) layer adjacent to the base layer. The BSF layer includes a first layer, and a second layer adjacent to the first layer. The first layer includes a first material and the second layer includes a second material different than the first material. | 03-28-2013 |
| 20080308156 | Textured rear electrode structure for use in photovoltaic device such as CIGS/CIS solar cell - A photovoltaic device including a rear electrode which may also function as a rear reflector. In certain example embodiments, the rear electrode comprises a reflective film (e.g., of Mo or the like) including one or more layers provided on an interior surface of a rear glass substrate of the photovoltaic device. In certain example embodiments, the interior surface(s) of the rear glass substrate and/or reflective film is/are textured so as to provide desirable electrical and reflective characteristics. The rear glass substrate and textured rear electrode/reflector are used in a photovoltaic device (e.g., CIS or CIGS solar cell) where an active semiconductor film is provided between the rear electrode/reflector and a front electrode(s). | 12-18-2008 |
| 20120180870 | PHOTOELECTRIC CONVERSION DEVICE, METHOD FOR PRODUCING THE SAME, AND SOLAR BATTERY - A photoelectric conversion device includes a layered structure formed on a substrate including a first electrode, a photoelectric conversion semiconductor layer and a second electrode, the photoelectric conversion semiconductor layer being mainly composed of a compound semiconductor containing group Ib, group IIIb and group VIb elements, and containing an alkaline(-earth) metal, wherein the alkaline(-earth) metal concentration distribution in the photoelectric conversion layer in the thickness direction includes a valley with the lowest alkaline(-earth) metal concentration and an area with an alkaline(-earth) metal concentration higher than that at the valley, the area being nearer to the substrate from the valley, and wherein Expressions (1) and (2) below are satisfied: | 07-19-2012 |
| 20120180869 | SOLAR POWER GENERATION APPARATUS AND MANUFACTURING METHOD THEREOF - Provided are a solar cell apparatus and a method of manufacturing the same. The solar cell apparatus includes a substrate, a rear electrode layer disposed on the substrate, a thin film layer disposed on the rear electrode layer, the thin film layer including a Group VI-based element, a light absorption layer disposed on the thin film layer, and a front electrode layer on the light absorption layer. | 07-19-2012 |
| 20120180868 | III-NITRIDE FLIP-CHIP SOLAR CELLS - A III-nitride photovoltaic device structure and method for fabricating the III-nitride photovoltaic device that increases the light collection efficiency of the III-nitride photovoltaic device. The III-nitride photovoltaic device includes one or more III-nitride device layers, and the III-nitride photovoltaic device functions by collecting light that is incident on the back-side of the III-nitride device layers. The III-nitride device layers are grown on a substrate, wherein the III-nitride device layers are exposed when the substrate is removed and the exposed III-nitride device layers are then intentionally roughened to enhance their light collection efficiency. The collection of the incident light via the back-side of the device simplifies the fabrication of the multiple junctions in the device. The III-nitride photovoltaic device may include grid-like contacts, transparent or semi-transparent contacts, or reflective contacts. | 07-19-2012 |
| 20130092236 | SOLAR CELLS - Solar cells are provided. The solar cell may include a substrate, a first electrode, a light absorption layer, a second electrode. Additionally, an intrinsic layer and a buffer layer may further be disposed between the light absorption layer and the second electrode. Here, the first and second electrodes may consist of carbon nanotubes of which polarities may be controlled. Thus, a flexible solar cell of low costs and high efficiency may be realized. | 04-18-2013 |
| 20090095349 | TYPE II QUANTUM DOT SOLAR CELLS - A device comprises a plurality of fence layers of a semiconductor material and a plurality of alternating layers of quantum dots of a second semiconductor material embedded between and in direct contact with a third semiconductor material disposed in a stack between a p-type and n-type semiconductor material. Each quantum dot of the second semiconductor material and the third semiconductor material form a heterojunction having a type II band alignment. A method for fabricating such a device is also provided. | 04-16-2009 |
| 20090056809 | SOLAR CELL - A solar cell includes a back metal-contact layer, a P-type semiconductor layer, a P-N junction layer, an N-type semiconductor layer and a transparent electrically conductive layer. The P-type semiconductor layer is formed on the back metal-contact layer. The P-type semiconductor layer is comprised of nano particles of a P-type semi-conductive compound. The P-N junction layer is formed on the P-type semiconductor layer. The N-type semiconductor layer is formed on the P-N junction layer. The N-type semiconductor layer is comprised of nano particles of an N-type semi-conductive compound. The transparent electrically conductive layer is formed on the N-type semiconductor layer and functions as a front contact layer. | 03-05-2009 |
| 20130061927 | Multilayer Thin-Film Back Contact System For Flexible Photoboltaic Devices On Polymer Substrates - A polymer substrate and back contact structure for a photovoltaic element, and a photovoltaic element include a CIGS photovoltaic structure, a polymer substrate having a device side at which the photovoltaic element can be located and a back side opposite the device side. A layer of dielectric is formed at the back side of the polymer substrate. A metal structure is formed at the device side of the polymer substrate. | 03-14-2013 |
| 20090235987 | Chemical Treatments to Enhance Photovoltaic Performance of CIGS - The present invention provides method of treating semiconductor surfaces (e.g., CIGS) using various solvents (including ionic solvents and eutectics), and methods preparing photovoltaic cells comprising treated CIGS materials. | 09-24-2009 |
| 20120234392 | PHOTOELECTRIC CONVERSION DEVICE - A photoelectric conversion device with high open-circuit voltage and high conversion efficiency is provided. A photoelectric conversion device including a p-n junction is formed by stacking a first semiconductor layer having p-type conductivity, a second semiconductor layer having p-type conductivity, and a third semiconductor layer having n-type conductivity between a pair of electrodes. The first semiconductor layer is a compound semiconductor layer, and the second semiconductor layer is formed using an organic compound and an inorganic compound. A material having a high hole-transport property is used as the organic compound, and a transition metal oxide having an electron-accepting property is used as the inorganic compound. | 09-20-2012 |
| 20110277840 | METHOD OF MANUFACTURE OF CHALCOGENIDE-BASED PHOTOVOLTAIC CELLS - The invention is a method of forming a cadmium sulfide based buffer on a copper chalcogenide based absorber in making a photovoltaic cell. The buffer is sputtered at relatively high pressures. The resulting cell has good efficiency and according to one embodiment is characterized by a narrow interface between the absorber and buffer layers. The buffer is further characterized according to a second embodiment by a relatively high oxygen content. | 11-17-2011 |
| 20090025793 | Photo-electrode For Dye-Sensitized Solar Cell Comprising Hollow Spherical Agglomerates of Metal Oxide Nanoparticles and Process for Preparation Thereof - Disclosed is a photo-electrode for a dye-sensitized solar cell comprising a conductive substrate; a light absorbing porous film comprising nanoparticles of a first metal oxide, which is formed on the conductive substrate; a light scattering porous film comprising hollow spherical agglomerates of nanoparticles of a second metal oxide, which is formed on the light absorbing porous film; and a photosensitive dye adsorbed on the surface of the light absorbing metal oxide nanoparticles as well as on the surface of the hollow spherical agglomerates of the light scattering porous film. | 01-29-2009 |
| 20110272027 | SOLAR PHOTOVOLTAIC DEVICES AND METHODS OF MAKING THEM - Solar photovoltaic (PV) devices, e.g., those based on the Copper Indium Selenide (CIS) family of absorbers, including CuIn(1-x)Ga(X)Se2 (CIGS) absorber thin-film PV devices, are provided. Embodiments provide PV devices comprising an alkali metal-containing polymeric film (ACPF), which is a film formed from a composite comprising an alkali metal-containing material and a polymer. Embodiments of this disclosure also provide PV devices comprising a thermally stable polymer film that does not contain an alkali metal (TSP). Included within the embodiments of this disclosure are flexible PV devices comprising a flexible base substrate onto which one or more ACPFs and/or TSPs is/are provided, as well as flexible PV devices wherein an ACPF or TSP itself constitutes the base substrate in the form of a stand alone film Processes for making such flexible PV devices include roll-to-roll processes. PV devices disclosed herein will provide improved energy conversion efficiencies as a result of the delivery of sodium dopant into the absorber layer. | 11-10-2011 |
| 20110284081 | PHOTOVOLTAIC THIN-FILM CELL PRODUCED FROM METALLIC BLEND USING HIGH-TEMPERATURE PRINTING - The metallic components of a IB-IIIA-VIA photovoltaic cell active layer may be directly coated onto a substrate by using relatively low melting point (e.g., less than about 500° C.) metals such as indium and gallium. Specifically, CI(G)S thin-film solar cells may be fabricated by blending molten group IIIA metals with solid nanoparticles of group IB and (optionally) group IIIA metals. The molten mixture may be coated onto a substrate in the molten state, e.g., using coating techniques such as hot-dipping, hot microgravure and/or air-knife coating. After coating, the substrate may be cooled and the film annealed, e.g., in a sulfur-containing or selenium-containing atmosphere. | 11-24-2011 |
| 20120227811 | ELECTROCHEMICAL METHOD OF PRODUCING COPPER INDIUM GALLIUM DISELENIDE (CIGS) SOLAR CELLS - The present invention describes a method of producing a photovoltaic solar cell with stoichiometric p-type copper indium gallium diselenide (CuIn | 09-13-2012 |
| 20090145482 | Photovoltaic Device with Solution-processed Chalcogenide Absorber Layer - The present invention provides a photovoltaic device, such as, a solar cell, having a substrate and an absorber layer disposed on the substrate. The absorber layer includes a doped or undoped composition represented by the formula: Cu | 06-11-2009 |
| 20120067425 | ALUMINUM BASE MATERIAL, METAL SUBSTRATE HAVING INSULATING LAYER EMPLOYING THE ALUMINUM BASE MATERIAL, SEMICONDUCTOR ELEMENT, AND SOLAR BATTERY - A metal substrate with an insulating layer, which is capable of being produced by a simple process, exhibits heat resistance during semiconductor processing, is superior in voltage resistance, and has small leakage current, and an Al base material that realizes the metal substrate are provided. The metal substrate with an insulating layer is formed by administering anodic oxidation on at least one surface of the Al base material. The Al base material includes only precipitous particles of a substance which is anodized by anodic oxidation as precipitous particles within an Al matrix. | 03-22-2012 |
| 20120067424 | ANNEALING PROCESSES FOR PHOTOVOLTAICS - Processes for making a solar cell by depositing various layers of components on a substrate and converting the components into a thin film photovoltaic absorber material. Processes of this disclosure can be used to control the stoichiometry of metal atoms in making a solar cell for targeting a particular concentration and providing a gradient of metal atom concentration. A selenium layer can be used in annealing a thin film photovoltaic absorber material. | 03-22-2012 |
| 20110220204 | Method of Forming Light Absorption Layer and Solar Cell Structure Using the Same - A method for forming a light absorption layer including the following steps is provided. A controlling precursor is wet coated on a base precursor. The band gap of the controlling precursor is larger than that of the base precursor. The controlling precursor is a Group I-III-VI compound, and the Group I-III-VI compound is composed of Cu | 09-15-2011 |
| 20110139251 | BANDGAP GRADING IN THIN-FILM DEVICES VIA SOLID GROUP IIIA PARTICLES - Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment, a method is provided for bandgap grading in a thin-film device using such particles. The method may be comprised of providing a bandgap grading material comprising of an alloy having: a) a IIIA material and b) a group IA-based material, wherein the alloy has a higher melting temperature than a melting temperature of the IIIA material in elemental form. A precursor material may be deposited on a substrate to form a precursor layer. The precursor material comprising group IB, IIIA, and/or VIA based particles. The bandgap grading material of the alloy may be deposited after depositing the precursor material. The alloy in the grading material may react after the precursor layer has begun to sinter and thus maintains a higher concentration of IIIA material in a portion of the compound film that forms above a portion that sinters first. | 06-16-2011 |
| 20110226337 | THIN-FILM SOLAR BATTERY AND METHOD FOR PRODUCING THE SAME - To provide a thin-film solar battery including a substrate, a first electrode, a photoelectric conversion layer and a second electrode, the first electrode, the photoelectric conversion layer and the second electrode being placed over the substrate, wherein the photoelectric conversion layer has a laminated layer structure which includes at least a p-type layer and an n-type layer, and wherein the n-type layer is formed of a compound containing elements of Group 13, Group 16 and at least one of Groups 2, 7 and 12, the Group 13 includes at least indium, and the Group 16 includes at least sulfur. | 09-22-2011 |
| 20110226336 | CHALCOGENIDE-BASED MATERIALS AND IMPROVED METHODS OF MAKING SUCH MATERIALS - The present invention provides strategies for making high quality CIGS photoabsorbing materials from precursor films that incorporate a sub-stoichiometric amount of chalcogen(s). Chalcogen(s) are incorporated into the CIGS precursor film via co-sputtering with one or more other constituents of the precursor. Optional annealing also may be practiced to convert precursor into more desirable chalcopyrite crystalline form in event all or a portion of the precursor has another constitution. The resultant precursors generally are sub-stoichiometric with respect to chalcogen and have very poor electronic characteristics. The conversion of these precursors into CMS photoabsorbing material via chalcogenizing treatment occurs with dramatically reduced interfacial void content. The resultant CIGS material displays excellent adhesion to other layers in the resultant photovoltaic devices. Ga migration also is dramatically reduced, and the resultant films have optimized Ga profiles in the top or bottom portion of the film that improve the quality of photovoltaic devices made using the films. | 09-22-2011 |
| 20090139573 | ABSORBER LAYER FOR THIN FILM PHOTOVOLTAICS AND A SOLAR CELL MADE THEREFROM - A method, in certain embodiments, includes providing a metal alloy, annealing the metal alloy, and contacting the metal alloy with vapors of selenium, or sulfur, or a combination thereof. The metal alloy having a uniform first bulk composition and a first surface composition on annealing provides an annealed metal alloy having a non uniform second bulk composition and a second surface composition which on being contacted vapors of selenium, or sulfur, or a combination thereof, produces a selenized or a sulfurized metal alloy. Further the metal alloy may have a layer formed in situ from a low melting point metal within the alloy via diffusion rather than sequential deposition and co-evaporation. | 06-04-2009 |
| 20120103419 | GROUP-III NITRIDE SOLAR CELLS GROWN ON HIGH QUALITY GROUP-III NITRIDE CRYSTALS MOUNTED ON FOREIGN MATERIAL - A group-III nitride solar cell is grown on a thin piece of a group-III nitride crystal that has been mounted on a carrier comprised of a foreign material. The thin piece is a thin layer with a thickness that ranges from approximately 5 microns to approximately 300 microns. | 05-03-2012 |
| 20120103418 | SINGLE JUNCTION TYPE CIGS THIN FILM SOLAR CELL AND METHOD FOR MANUFACTURING THE THIN FILM SOLAR CELL - Provided is a single junction type CIGS thin film solar cell, which includes a CIGS light absorption layer manufactured using a single junction. The single junction type CIGS thin film solar cell includes a substrate, a back contact deposited on the substrate, a light absorption layer deposited on the back contact and including a P type CIGS layer and an N type CIGS layer coupled to the P type CIGS layer using a single junction, and a reflection prevention film deposited on the light absorption layer. | 05-03-2012 |
| 20110232761 | SOLAR PHOTOVOLTAIC DEVICES HAVING OPTIONAL BATTERIES - Solar photovoltaic (PV) devices, e.g., those based on the Copper Indium Selenide (CIS) family of absorbers, including CuIn | 09-29-2011 |
| 20110232762 | METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION ELEMENT, AND PHOTOELECTRIC CONVERSION ELEMENT AND THIN-FILM SOLAR CELL - A method for manufacturing a photoelectric conversion element including a step of preparing a substrate and a step of forming a photoelectric conversion layer made of a CIGS-based semiconductor compound on the substrate. The step of forming the photoelectric conversion layer includes exposing the substrate to vapors of (In, Ga) and Se, or a vapor of (In, Ga) | 09-29-2011 |
| 20100236628 | Composition and method of forming an insulating layer in a photovoltaic device - A solar cell includes a first electrode located over a substrate, at least one p-type semiconductor absorber layer located over the first electrode, the p-type semiconductor absorber layer comprising a copper indium selenide (CIS) based alloy material, an n-type semiconductor layer located over the p-type semiconductor absorber layer, an insulating aluminum zinc oxide layer located over the n-type semiconductor layer, the insulating aluminum zinc oxide having an aluminum content of 100 ppm to 5000 ppm and a second electrode over the insulating aluminum layer, the second electrode being transparent and electrically conductive. The insulating aluminum zinc oxide having an aluminum content of 100 ppm to 5000 ppm, may be deposited by pulsed DC, non-pulsed DC, or AC sputtering from an aluminum doped zinc oxide having an aluminum content of 100 ppm to 5000 ppm. | 09-23-2010 |
| 20100236630 | CHEMICAL VAPOR DEPOSITION OF CuInxGa1-x(SeyS1-y)2 THIN FILMS AND USES THEREOF - The subject application relates to a chemical vapor (CV) deposition technique to form CuIn | 09-23-2010 |
| 20100236629 | CIGS Solar Cell Structure And Method For Fabricating The Same - A copper/indium/gallium/selenium (CIGS) solar cell structure and a method for fabricating the same are provided. The CIGS solar cell structure includes a substrate, a molybdenum thin film layer, an alloy thin film layer, and a CIGS thin film layer. According to the present invention, the alloy thin film layer is provided between the molybdenum thin film layer and the CIGS thin film layer, serving as a conductive layer of the CIGS solar cell structure. The alloy thin film layer is composed of a variety of high electrically conductive materials (such as molybdenum, copper, aluminum, and silver) in different proportions. | 09-23-2010 |
| 20120031492 | Gallium-Containing Transition Metal Thin Film for CIGS Nucleation - A solar cell comprises a substrate, a first transition metal layer comprising an alkali element or an alkali compound located over the substrate, a second transition metal layer comprising gallium located over the first transition metal layer, at least one p-type semiconductor absorber layer including a copper indium selenide (CIS) based alloy material located over the second transition metal layer, an n-type semiconductor layer located over the p-type semiconductor absorber layer, and a top electrode located over the n-type semiconductor layer. | 02-09-2012 |
| 20110232760 | PHOTOELECTRIC CONVERSION DEVICE AND SOLAR CELL - A photoelectric conversion device includes: a photoelectric conversion layer containing a semiconductor and having a first surface as a light absorption surface and a second surface opposite to the first surface; a first electrode formed substantially in contact with the first surface; and a second electrode formed substantially in contact with the second surface. The photoelectric conversion layer is a monograin film of semiconductor grains which are monograin film of separate semiconductor grains which are arranged substantially in a single layer and each of which is at least partially buried in a binder layer, the semiconductor grains have a photoelectric conversion property and an average diameter in the range from one micrometer to 60 micrometers, and each of at least part of the semiconductor grains contains at least one stacking fault. | 09-29-2011 |
| 20110108115 | Forming a Photovoltaic Device - Methods for forming photovoltaic devices, methods for forming semiconductor compounds, photovoltaic device and chemical solutions are presented. For example, a method for forming a photovoltaic device comprising a semiconductor layer includes forming the semiconductor layer by electrodeposition from an electrolyte solution. The electrolyte solution includes copper, indium, gallium, selenous acid (H | 05-12-2011 |
| 20090107550 | HIGH-THROUGHPUT PRINTING OF SEMICONDUCTOR PRECURSOR LAYER FROM CHALCOGENIDE NANOFLAKE PARTICLES - Methods and devices are provided for transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after selective forces settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be nanoflakes that have a high aspect ratio. The resulting dense films formed from nanoflakes are particularly useful in forming photovoltaic devices. In one embodiment, at least one set of the particles in the ink may be inter-metallic flake particles (microflake or nanoflake) containing at least one group IB-IIIA inter-metallic alloy phase. | 04-30-2009 |
| 20100307591 | Single-Junction Photovoltaic Cell - A method for forming a single-junction photovoltaic cell includes forming a dopant layer on a surface of a semiconductor substrate; diffusing the dopant layer into the semiconductor substrate to form a doped layer of the semiconductor substrate; forming a metal layer over the doped layer, wherein a tensile stress in the metal layer is configured to cause a fracture in the semiconductor substrate; removing a semiconductor layer from the semiconductor substrate at the fracture; and forming the single junction photovoltaic cell using the semiconductor layer. A single-junction photovoltaic cell includes a doped layer comprising a dopant diffused into a semiconductor substrate; a patterned conducting layer formed on the doped layer; a semiconductor layer comprising the semiconductor substrate located on the doped layer on a surface of the doped layer opposite the patterned conducting layer; and an ohmic contact layer formed on the semiconductor layer. | 12-09-2010 |
| 20110023963 | SOLAR CELL AND MANUFACTURING METHOD THEREOF - There is provided a solar cell in which a lower electrode layer, a photoelectric conversion layer having a chalcopyrite structure that includes a Group Ib element, a Group IIIb element, and a Group VIb element, and an upper electrode layer are sequentially formed on top of a substrate, wherein the solar cell is provided with a silicate layer between the substrate and the lower electrode layer. | 02-03-2011 |
| 20110030796 | METHODS AND ARTICLES FOR CAIGS SILVER-CONTAINING PHOTOVOLTAICS - This invention relates to methods and articles using compounds, polymeric compounds, and compositions for semiconductor and optoelectronic materials and devices including thin film and band gap materials. This invention provides a range of compounds, polymeric compounds, compositions, materials and methods directed ultimately toward photovoltaic applications, transparent conductive materials, as well as devices and systems for energy conversion, including solar cells. In particular, this invention relates to polymeric precursor compounds and precursor materials for preparing photovoltaic layers. A compound may contain repeating units {M | 02-10-2011 |
| 20110030798 | METHODS AND ARTICLES FOR CAIGAS ALUMINUM-CONTAINING PHOTOVOLTAICS - This invention relates to methods and articles using compounds, polymeric compounds, and compositions used to prepare semiconductor and optoelectronic materials and devices including thin film and band gap materials. This invention provides a range of compounds, polymeric compounds, compositions, materials and methods directed ultimately toward photovoltaic applications, transparent conductive materials, as well as devices and systems for energy conversion, including solar cells. In particular, this invention relates to polymeric precursor compounds and precursor materials for preparing photovoltaic layers. In particular, this invention relates to molecular precursor compounds and precursor materials for preparing photovoltaic layers including CAIGAS. | 02-10-2011 |
| 20110030800 | METHODS FOR CAIGS SILVER-CONTAINING PHOTOVOLTAICS - This invention relates to methods for making materials using compounds, polymeric compounds, and compositions for semiconductor and optoelectronic materials and devices including thin film and band gap materials. This invention provides a range of compounds, polymeric compounds, compositions, materials and methods directed ultimately toward photovoltaic applications, transparent conductive materials, as well as devices and systems for energy conversion, including solar cells. This invention further relates to methods for making a CAIGS, CAIS or CAGS material by providing one or more polymeric precursor compounds or inks thereof, providing a substrate, depositing the compounds or inks onto the substrate; and heating the substrate at a temperature of from about 20° C. to about 650° C. | 02-10-2011 |
| 20110030799 | METHODS AND MATERIALS FOR CIS AND CIGS PHOTOVOLTAICS - This invention relates to processes for materials using a range of compounds, polymeric compounds, and compositions used to prepare semiconductor and optoelectronic materials and devices including thin film and band gap materials for photovoltaic applications including devices and systems for energy conversion and solar cells. In particular, this invention relates to CIGS, CIS or CGS materials made by a process of providing one or more polymeric precursor compounds or inks thereof, providing a substrate, depositing the compounds or inks onto the substrate; and heating the substrate, thereby producing a material. | 02-10-2011 |
| 20110030797 | METHODS AND ARTICLES FOR AIGS SILVER-CONTAINING PHOTOVOLTAICS - This invention relates to methods and articles using compounds, polymeric compounds, and compositions used to prepare semiconductor and optoelectronic materials and devices including thin film and band gap materials. This invention provides a range of compounds, polymeric compounds, compositions, materials and methods directed ultimately toward photovoltaic applications, transparent conductive materials, as well as devices and systems for energy conversion, including solar cells. In particular, this invention relates to polymeric precursor compounds and precursor materials for preparing photovoltaic layers. A compound may contain repeating units {M | 02-10-2011 |
| 20110030795 | METHODS AND ARTICLES FOR CIS AND CIGS PHOTOVOLTAICS - This invention relates to methods and articles using a range of compounds, polymeric compounds, and compositions used to prepare semiconductor and optoelectronic materials and devices including thin film and band gap materials for photovoltaic applications including devices and systems for energy conversion and solar cells. In particular, this invention relates to polymeric precursor compounds and precursor materials for preparing photovoltaic layers. A compound may contain repeating units {M | 02-10-2011 |
| 20110083743 | PHOTOELECTRIC CONVERSION DEVICE, METHOD FOR PRODUCING THE SAME, AND SOLAR BATTERY - A photoelectric conversion device includes a photoelectric conversion layer which mainly composed of a compound semiconductor containing a group Ib element, at least two group IIIb elements including Ga, and a group VIb element and contains an alkaline(-earth) metal. Concentration distributions of the alkaline(-earth) metal and Ga in the photoelectric conversion layer in the thickness direction includes a valley with the lowest concentration and an area with a higher concentration between the substrate and the valley, and satisfy Expressions (1) and (2) below: | 04-14-2011 |
| 20110174377 | MANUFACTURING METHOD FOR FLEXIBLE DEVICE, FLEXIBLE DEVICE, SOLAR CELL, AND LIGHT EMITTING DEVICE - Provided are a method of manufacturing a flexible device and the flexible device, a solar cell, and a light emitting device. The method of manufacturing a flexible device includes providing a device layer on a sacrificial substrate, contacting a flexible substrate on one side surface of the device layer, and removing the sacrificial substrate. A large area device may be transferred onto the flexible substrate with superior alignment to realize and manufacture the flexible device. In addition, since mass production is possible, the economic feasibility may be superior. Also, when a large area solar cell having a thin thickness is manufactured, since a limitation such as twisting of a thin film of a solar cell may be effectively solved, the economic feasibility and stability may be superior. | 07-21-2011 |
| 20090211638 | MULTIPLE-DYES SENSITIZED SOLAR CELLS AND A METHOD FOR PREPARING THE SAME - Provided are a dye-sensitized solar cell and a method for preparing the same. A dye-sensitized solar cell may include a photoelectrode comprising at least two kinds of dye layers having different wavelengths on a transparent conductive substrate, and a counter electrode comprising a platinum (Pt) layer on a transparent conductive substrate. The counter electrode may be arranged opposite to the photoelectrode and an electrolyte may be filled between the photoelectrode and the counter electrode. | 08-27-2009 |
| 20110048537 | METHOD OF FABRICATING A SEMICONDUCTOR JUNCTION - A method of fabricating a semiconductor junction is disclosed. The method includes forming a quaternary heterovalent compound semiconductor alloy epilayer, determining a doping characteristic of the epilayer, and forming a secondary layer on the epilayer to create a semiconductor junction, the secondary layer being doped in response to the determined doping characteristic of the epilayer. Solar cell and light emitting diode designs are also disclosed. | 03-03-2011 |
| 20120266958 | METHODS OF FORMING RUTHENIUM-GROUP IIIA ALLOYS - Described are embodiments including an apparatus that provides a thin film solar cell base structure for a photovoltaic device, a method of manufacturing a photovoltaic device, a roll to roll method of manufacturing a thin film solar cell base structure, and a ruthenium alloy sheet material. | 10-25-2012 |
| 20120199203 | GLASS SHEET FOR CU-IN-GA-SE SOLAR CELLS, AND SOLAR CELLS USING SAME - Provided are a glass sheet for a CIGS solar cell which satisfies both of high power generation efficiency and high glass transition temperature, and a CIGS solar cell having high power generation efficiency. A glass sheet for a Cu—In—Ga—Se solar cell containing, in terms of mol % on the basis of the following oxides, 60 to 75% of SiO | 08-09-2012 |
| 20080202584 | THIN FILM SOLAR CELL MANUFACTURING AND INTEGRATION - A method of forming a Group IBIIIAVIA solar cell absorber which includes an active portion and an electrically resistive portion. The absorber is interposed between a base layer and a transparent conductive layer. The electrically resistive portion increases resistance between the base layer and a connector layer that is formed on the transparent conductive layer. The connector layer comprises the busbar and the fingers of the solar cell. The busbar is preferably placed over the electrically resistive portion while the fingers extend over the active portion of the absorber layer. | 08-28-2008 |
| 20080202583 | DYE-SENSITIZED SOLAR CELL AND METHOD OF MANUFACTURING SAME - A dye-sensitized solar cell including: a first electrode; a light absorption layer on one side of the first electrode; a second electrode facing the light absorption layer on the first electrode; and an electrolyte between the first electrode and the second electrode, wherein the light absorption layer includes: a photosensitive dye adsorbed to a porous membrane, the porous membrane including semiconductor particulates and an -M-O-M- oxide network about the semiconductor particulates, wherein the M is a transition metal. | 08-28-2008 |
| 20100319776 | Ink for forming thin film of solar cells and method for preparing the same, CIGS thin film solar cell using the same and manufacturing method thereof - Disclosed are an ink containing nanoparticles for formation of thin film of a solar cell and its preparation method, CIGS thin film solar cell having at least one light absorption layer formed by coating or printing the above ink containing nanoparticles on a rear electrode, and a process for manufacturing the same. More particularly, the above absorption layer comprises Cu, In, Ga and Se elements as constitutional ingredients thereof and such elements exist in the light absorption layer by coating or printing an ink that contains Cu | 12-23-2010 |
| 20110041918 | METHODS AND MATERIALS FOR AIGS SILVER-CONTAINING PHOTOVOLTAICS - This invention relates to methods for materials using compounds, polymeric compounds, and compositions used to prepare semiconductor and optoelectronic materials and devices including thin film and band gap materials. This invention provides a range of compounds, polymeric compounds, compositions, materials and methods directed ultimately toward photovoltaic applications, transparent conductive materials, as well as devices and systems for energy conversion, including solar cells. This invention further relates to thin film AIGS, AIS, and AGS materials made by a process of providing one or more polymeric precursor compounds or inks thereof, providing a substrate, depositing the compounds or inks onto the substrate; and heating the substrate at a temperature of from about 20° C. to about 650° C. | 02-24-2011 |
| 20090320924 | Solar Cell Structure - A solar cell structure includes a substrate, a buffer layer on the substrate, a type II band alignment nanostructure layer on the buffer layer, a p-type area and an n-type area defined on the type II band alignment nanostructure layer, and a p-type metal electrode and an n-type metal electrode coated onto the p-type and n-type areas, respectively. The type II band alignment nanostructure layer is provided for distributing an electron current and a hole current in different channels to minimize the recombination of electrons and holes and improve the photoelectric conversion efficiency of the solar cell significantly. | 12-31-2009 |
| 20110030794 | Apparatus And Method For Depositing A CIGS Layer - A method and apparatus for depositing a CIGS film and a buffer layer on to a flexible substrate. Deposition of the CIGS film occurs in monolayers due to rotation of the flexible substrate. A roll of substrate is placed on a loading roller within a flexible solar cell coating apparatus. A section of the substrate unwinds and advances around a rotating drum. The CIGS film is deposited as the section is rotated and heated. Deposition is a hybrid sputtering and evaporation process. Deposition continues until a predetermined thickness is met and the roll is completely coated. The buffer layer is then deposited on to the CIGS film. The deposition of the CIGS film utilizes elemental selenium and sodium doped indium. The elemental selenium may be ionized to increase monolayer reaction reactivity. The buffer layer is a non-toxic ZnS-O layer. | 02-10-2011 |
| 20110114182 | THIN-FILM DEVICES FORMED FROM SOLID GROUP IIIA PARTICLES - Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment of the present invention, a method is described comprising of providing a first material comprising an alloy of a) a group IIIA-based material and b) at least one other material. The material may be included in an amount sufficient so that no liquid phase of the alloy is present within the first material in a temperature range between room temperature and a deposition or pre-deposition temperature higher than room temperature, wherein the group IIIA-based material is otherwise liquid in that temperature range. The other material may be a group IA material. A precursor material may be formulated comprising a) particles of the first material and b) particles containing at least one element from the group consisting of: group IB, IIIA, VIA element, alloys containing any of the foregoing elements, or combinations thereof. The temperature range described above may be between about 20° C. and about 200° C. It should be understood that the alloy may have a higher melting temperature than a melting temperature of the IIIA-based material in elemental form. | 05-19-2011 |
| 20120000532 | MANUFACTURE OF PHOTOVOLTAIC DEVICES - A method and apparatus for depositing a film on a substrate includes subjecting material to an energy beam. | 01-05-2012 |
| 20120000531 | CIGS Solar Cell and Method for Manufacturing thereof - A CIGS solar cell includes a glass substrate, a light absorbing surface and a photoelectric transducer structure. The glass substrate includes a plurality of arrayed protrusions. The arrayed protrusions protrude from at least one surface of the glass substrate, wherein the depth from the top of the arrayed protrusions to the bottom of the arrayed protrusions is predetermined. The light absorbing surface is located on the top of the arrayed protrusions, the side of the arrayed protrusions and the surface of the glass substrate between the arrayed protrusions. The photoelectric transducer structure includes an n-type semiconductor layer, an i-type semiconductor layer and a p-type semiconductor layer. | 01-05-2012 |
| 20120234391 | GLASS-COATED FLEXIBLE SUBSTRATES FOR PHOTVOLTAIC CELLS - The present disclosure relates to a method of manufacturing of a glass coated material that is suitable for use in the manufacture of flexible solar cells and other electronic devices. The invention is also to articles comprising the flexible solar cells described herein. | 09-20-2012 |
| 20100116341 | Copper-gallium allay sputtering target, method for fabricating the same and related applications - A method for fabricating a copper-gallium alloy sputtering target comprises forming a raw target; treating the raw target with at least one thermal treatment between 500° C.˜850° C. being mechanical treatment, thermal annealing treatment for 0.5˜5 hours or a combination thereof to form a treated target; and cooling the treated target to a room temperature to obtain the copper-gallium alloy sputtering target that has 71 atomic % to 78 atomic % of Cu and 22 atomic % to 29 atomic % of Ga and having a compound phase not more than 25% on its metallographic microstructure. Therefore, the copper-gallium alloy sputtering target does not induce micro arcing during sputtering so a sputtering rate is consistent and forms a uniform copper-gallium thin film. Accordingly, the copper-gallium thin film possesses improved quality and properties. | 05-13-2010 |
| 20110155246 | THIN FILM SOLAR CELL AND MANUFACTURING METHOD THEREOF - The present invention relates to a thin film solar cell and manufacturing method thereof. The thin film solar cell comprises a substrate, a front electrode layer, an absorber layer and a rear electrode layer stacked in such sequence, wherein the front electrode layer is formed by doping group III element into a zinc oxide. The thin-film solar cell further comprise an interlayer disposed between the front electrode layer and the absorber layer wherein the interlayer has p-type holes formed by introducing nitrogen-based gas having Argon (Ar) as a carrier gas interacted with the group III element by using PECVD or thermal treatment, implementation and diffusion on the front electrode layer surface so that the concentration of nitrogen atoms in the interlayer is greater than 10 | 06-30-2011 |
| 20120012182 | PHOTOELECTRIC CONVERSION SEMICONDUCTOR LAYER, MANUFACTURING METHOD THEREOF, PHOTOELECTRIC CONVERSION DEVICE, AND SOLAR CELL - A photoelectric conversion semiconductor layer having high photoelectric conversion efficiency is provided at a low cost. Photoelectric conversion semiconductor layer is a layer that generates a current by absorbing light and is formed of a particle layer in which a plurality of plate-like particles is disposed only in a plane direction or a sintered body thereof, or a particle layer in which a plurality of plate-like particles is disposed in a plane direction and a thickness direction or a sintered body thereof. | 01-19-2012 |
| 20120017993 | SEMICONDUCTOR DEVICE AND SOLAR BATTERY USING THE SAME - A semiconductor device includes a semiconductor circuit on an insulated metal substrate, which includes an anodized film formed on at least one side of an Al substrate, wherein the Al substrate has a potential higher than an average potential of the semiconductor circuit when the semiconductor circuit is driven. | 01-26-2012 |
| 20120204957 | METHOD FOR GROWING AlInGaN LAYER - A method for growing an In | 08-16-2012 |
| 20090211639 | DYE-SENSITIZED SOLAR CELL HAVING NANOSTRUCTURE ABSORBING MULTI-WAVELENGTH, AND A METHOD FOR PREPARING THE SAME - A dye-sensitized solar cell absorbing a multi-wavelength, and a method of preparing the same are provided. In the dye-sensitized solar cell, a contacted interface structure of metal oxide nanoparticle layers of a photoelectrode and a counter electrode may be provided. The contacted interface structure may be formed by contacting the faces of the nanoparticle layers of the electrodes adsorbed by same or different dyes after forming photoabsorption layers comprising the nanoparticle layers respectively on the photoelectrode and the counter electrode. | 08-27-2009 |
| 20110073186 | TARGET FOR A SPUTTERING PROCESS FOR MAKING A COMPOUND FILM LAYER OF A THIN SOLAR CELL, METHOD OF MAKING THE THIN FILM SOLAR CELL, AND THIN FILM SOLAR CELL MADE THEREBY - A target adapted for a sputtering process for making a compound film layer of a thin film solar cell includes a composition having a formula of CuB | 03-31-2011 |
| 20110088782 | PHOTOELECTRIC CONVERSION SEMICONDUCTOR LAYER, METHOD FOR PRODUCING THE SAME, PHOTOELECTRIC CONVERSION DEVICE AND SOLAR BATTERY - A photoelectric conversion device includes a photoelectric conversion semiconductor layer for generating an electric current when it absorbs light, a first electrode formed in contact with a light-absorbing surface of the semiconductor layer, and a second electrode formed in contact with a rear surface of the semiconductor layer. The semiconductor layer is a single-particle film including a binder layer and separate photoelectric conversion semiconductor particles. At least parts of the photoelectric conversion semiconductor particles are embedded in the binder layer. The photoelectric conversion semiconductor particles have a mean particle diameter of not less than 1 μm and not more than 60 μm and a variation coefficient of particle diameter of less than 30%. Parts of the semiconductor particles are in contact with the second electrode at the rear surface and parts of the semiconductor particles are in contact with the first electrode at the front surface via a buffer layer. | 04-21-2011 |
| 20120118384 | CIS-BASED THIN FILM SOLAR CELL - In order to provide a CIS-based thin film solar cell having high photoelectric conversion efficiency, this CIS-based thin film solar cell is laminated in order of a high distortion point glass substrate ( | 05-17-2012 |
| 20100051105 | FLEXIBLE SUBSTRATE FOR II-VI COMPOUND SOLAR CELLS - A thin film solar including a II-VI compound semiconductor absorber layer and a stainless steel substrate is provided. The stainless steel flexible foil substrate includes about 10-25% chromium and about 0.50-2.25% molybdenum, and no nickel. Process yield of the solar cells manufactured on such stainless steel substrates is higher than 10% because of a very low defect density such as micro-cracks, pinholes, and adhesion failures between the substrate and the absorber layer. | 03-04-2010 |
| 20120073659 | DEPOSITION PROCESSES FOR PHOTOVOLTAIC DEVICES - Processes for making a solar cell by depositing various layers of components on a substrate and converting the components into a thin film photovoltaic absorber material. Processes of this disclosure can be used to control the stoichiometry of metal atoms in making a solar cell for targeting a particular concentration and providing a gradient of metal atom concentration. A selenium layer can be used in annealing a thin film photovoltaic absorber material. | 03-29-2012 |
| 20100319777 | SOLAR CELL AND METHOD OF FABRICATING THE SAME - A solar cell and method of fabricating the same are provided. The solar cell includes a metal electrode layer, an optical absorption layer, a buffer layer, and a transparent electrode layer. The metal electrode layer is disposed on a substrate. The optical absorption layer is disposed on the metal electrode layer. The buffer layer is disposed on the optical absorption layer and includes an indium gallium nitride (In | 12-23-2010 |
| 20110120557 | MANUFACTURING METHOD FOR THIN FILM TYPE LIGHT ABSORBING LAYER, MANUFACTURING METHOD FOR THIN FILM SOLAR CELL USING THEREOF AND THIN FILM SOLAR CELL - Disclosed is a manufacturing method for a thin film type light absorbing layer of a solar cell. The manufacturing method for a light absorbing layer includes: filling CIGS crystal powder in an evaporation source of a chamber; simultaneously evaporating the CIGS crystal powder; and depositing the evaporated CIGS crystal powder on a substrate to form a CIGS thin film. | 05-26-2011 |
| 20120318357 | DEPOSITION PROCESSES FOR PHOTOVOLTAICS - Processes for making a solar cell by depositing various layers of components on a substrate and converting the components into a thin film photovoltaic absorber material. Processes of this disclosure can be used to control the stoichiometry of metal atoms in making a solar cell, and for targeting a particular concentration. CIGS thin film solar cells can be made. | 12-20-2012 |
| 20120318358 | SOLUTION-BASED PROCESSES FOR SOLAR CELLS - Solution-based processes for making thin film solar cells including CIGS are disclosed. A solar cell can have a conversion efficiency of 15% to 20% or greater. Processes for making solar cells include depositing various layers of monomer and polymeric components on a substrate and converting the components into a thin film photovoltaic absorber material. The stoichiometry of metal atoms in a solar cell can be controlled and targeted. | 12-20-2012 |
| 20120080092 | HIGH EFFICIENCY SOLAR CELL DEVICE WITH GALLIUM ARSENIDE ABSORBER LAYER - Embodiments of the invention provide a method of forming a doped gallium arsenide based (GaAs) layer from a solution based precursor. The doped gallium arsenide based (GaAs) layer formed from the solution based precursor may assist solar cell devices to improve light absorption and conversion efficiency. In one embodiment, a method of forming a solar cell device includes forming a first layer with a first type of dopants doped therein over a surface of a substrate, forming a GaAs based layer on the first layer, and forming a second layer with a second type of dopants doped therein on the GaAs based layer. | 04-05-2012 |
| 20120080091 | FABRICATION OF CIS OR CIGS THIN FILM FOR SOLAR CELLS USING PASTE OR INK - Provided is a method for preparing a copper indium selenide (CIS) or copper indium gallium selenide (CIGS) thin film, including: (1) mixing Cu, In and Ga precursors in a solvent and adding a polymer binder to obtain a paste or ink; (2) coating the obtained CIG precursor paste or ink on a conductive substrate by printing, spin coating or spraying and heat-treating the same under air or oxygen gas atmosphere to remove remaining organic substances and obtain a CIG mixed oxide thin film; (3) heat-treating the obtained CIG mixed oxide thin film under hydrogen or sulfurizing gas atmosphere to obtain a reduced or sulfurized CIG mixed thin film; and (4) heat-treating the obtained reduced or sulfurized CIG mixed thin film under selenium-containing gas atmosphere to obtain a CIGS thin film. Since residual carbon resulting from organic additives, which is the biggest problem in the existing paste coating techniques, can be reduced remarkably, and CIGS crystal size can be improved, the disclosed method can improve efficiency of CIGS solar cells. | 04-05-2012 |
| 20110303292 | LIGHT-ABSORBING MATERIAL AND PHOTOELECTRIC CONVERSION ELEMENT USING THE SAME - There is provided a new light-absorbing material and a photoelectric conversion element using the same, which are capable of improving conversion efficiency of a solar cell. The light-absorbing material in the present invention is made up of a GaN-based compound semiconductor with part of Ga replaced by a 3d transition metal, and has one or more impurity bands, and whose light absorption coefficient over an overall wavelength region of not longer than 1500 nm and not shorter than 300 nm is not lower than 1000 cm | 12-15-2011 |
| 20110308616 | Photoelectric Conversion Device - It is aimed to provide a photoelectric conversion device having high adhesion between a light-absorbing layer and an electrode layer as well as high photoelectric conversion efficiency. In order to achieve this object, the photoelectric conversion device includes a first layer and a second layer provided on the first layer. Further, in the photoelectric conversion device, the first layer includes an electrode layer, the second layer includes a light-absorbing layer including a group I-III-VI compound semiconductor, the light-absorbing layer includes a first region and a second region located farther from the first layer than the first region, and an average grain diameter of crystal grains in the second region is larger than an average grain diameter of crystal grains in the first region. | 12-22-2011 |
| 20120325317 | APPARATUS FOR FORMING COPPER INDIUM GALLIUM CHALCOGENIDE LAYERS - A multilayer structure to form absorber layers for solar cells. The multilayer structure includes a base comprising a contact layer on a substrate layer, a first layer on the contact layer, and a metallic layer on the first layer. The first layer includes an indium-gallium-selenide film and the gallium to indium molar ratio of the indium-gallium-selenide film is in the range of 0 to 0.8. The metallic layer includes gallium and indium without selenium. Additional selenium is deposited onto the metallic layer before annealing the structure for forming an absorber. | 12-27-2012 |
| 20120285537 | SOLAR CELL - A solar cell comprises a p-type semiconductor layer, an n-type semiconductor layer, and a superlattice semiconductor layer interposed between the p-type semiconductor layer and the n-type semiconductor layer, wherein the superlattice semiconductor layer has a stacked structure in which quantum layers and barrier layers are stacked alternately and repeatedly, wherein the stacked structure is formed whereby a miniband is formed by a quantum level of the quantum layers on the side of a conduction band, wherein an energy level at a bottom of the miniband is lower than an energy level at a bottom of the conduction band of the barrier layers, and an energy level at a top of the miniband is higher than an energy level, which is lower than the energy level at the bottom of the conduction band of the barrier layers by an amount twice as much as thermal energy at room temperature. | 11-15-2012 |
| 20130008508 | LIGHT ABSORBING MATERIAL AND PHOTOELECTRIC CONVERSION ELEMENT - A new light-absorbing material which can increase the conversion efficiency of a solar cell and a photoelectric conversion element using same are provided. The light-absorbing material of the present invention comprises a nitride-based compound semiconductor obtained by replacement of part of Al and/or Ga in a compound semiconductor expressed by a general formula Al | 01-10-2013 |
