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Silicon or germanium containing

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136 - Batteries: thermoelectric and photoelectric

136243000 - PHOTOELECTRIC

136252000 - Cells

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DocumentTitleDate
20100101649POROUS LAYER, ITS MANUFACTURING PROCESS AND ITS APPLICATIONS - The present invention relates to a substrate (04-29-2010
20080210304Photovoltaic Cell Comprising a Photovotaically Active Semi-Conductor Material Contained Therein - The invention relates to a photovoltaic cell comprising a photovoltaically active semiconductor material, wherein the photovoltaically active semiconductor material is a material of the formula (I), of the formula (II) or of a combination thereof:09-04-2008
20090194167Methods of Forming Photoactive Layer - Methods of forming a photoactive layer, as well as related compositions, photovoltaic cells, and photovoltaic modules, are disclosed.08-06-2009
20100116340DYE SENSITIZED PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF, ELECTRONIC EQUIPMENT, AND SEMICONDUCTOR ELECTRODE AND MANUFACTURING METHOD THEREOF - In a dye sensitized photoelectric conversion device having an electrolyte layer (05-13-2010
20100116339METHOD FOR PRODUCING SOLID PHASE SHEET AND PHOTOVALTAIC CELL EMPLOYING SOLID PHASE SHEET - An object of the invention is to solve the problem that a residual melt remaining on a surface of a solid phase sheet of a semiconductor material causes cracks in the solid phase sheet, resulting in degraded yield. The residual melt occurs in the process of producing the solid phase sheet on a surface of the base body by bringing the base body into contact with a melt of semiconductor material. The base body is sectioned by a circumferential groove into a peripheral section and an inner section surrounded by the circumferential groove or has the peripheral section and the inner section partly connected to each other. In the present invention, a slit is provided in the surface of the inner section of the base body. The slit is preferably provided at a trailing side in a moving direction in which the surface of the base body is brought into contact with the melt of semiconductor material. More preferably, a plurality of slits are provided extending from the circumferential groove into the inner section in the moving direction in which the base body is brought into contact with the melt of semiconductor material.05-13-2010
20100116338HIGH QUALITY SEMICONDUCTOR MATERIAL - A hydrogenated, silicon based semiconductor alloy has a defect density of less than 1005-13-2010
20080314446PROCESSES FOR THE PREPARATION OF SOLAR-GRADE SILICON AND PHOTOVOLTAIC CELLS - A process for the manufacture of high-purity elemental silicon is described. The process includes the step of preparing a silica gel composition by reacting at least one organosilane compound with an aqueous composition, so as to form granules of the silica gel. A hydrocarbon species is then decomposed by way of a hydrocarbon cracking reaction in the presence of the silica gel composition, so that carbon resulting from the decomposition of the hydrocarbon species is deposited on the granules of the gel composition. Heating of the carbon-containing silica gel composition to an elevated temperature produces the elemental silicon product. Related methods for making photovoltaic cells, using the elemental silicon, are also described.12-25-2008
20100101650COMPOUND, PHOTOELECTRIC CONVERSION DEVICE AND PHOTOELECTROCHEMICAL BATTERY - The present invention provides a complex compound (I) obtained by coordinating a ligand represented by the formula (II) below and a bidentate ligand to a metal atom,04-29-2010
20120211081PHOTOELECTRIC CONVERSION DEVICE - An object is to provide a photoelectric conversion device which has little loss of light absorption in a window layer and has high conversion efficiency. A photoelectric conversion device including a crystalline silicon substrate having n-type conductivity and a light-transmitting semiconductor layer having p-type conductivity between a pair of electrodes is formed. In the photoelectric conversion device, a p-n junction is formed between the crystalline silicon, substrate and the light-transmitting semiconductor layer, and the light-transmitting semiconductor layer serves as a window layer. The light-transmitting semiconductor layer includes an organic compound and an inorganic compound. As the organic compound and the inorganic compound, a material having a high hole-transport property and a transition metal oxide having an electron-accepting property are respectively used.08-23-2012
20090260689Solar cell lead wire, method of making the same, and solar cell - A solar cell lead wire includes a conducting material, and a molten solder plated layer formed on the conducting material. The conducting material includes a concave-convex conducting material that includes a concavity on top and under surfaces thereof, respectively, and a convexity on a side surface thereof, and that is formed by die processing a strip-shaped conducting material, and the molten solder plated layer comprises a flat surface formed by supplying a molten solder to the concavity of the concave-convex conducting material.10-22-2009
20100012189ORGANIC THIN FILM SOLAR CELL - The present invention provides an organic thin film solar cell having a novel photoelectric conversion layer with superior conversion efficiency from light to electricity and superior carrier transportability to an electrode. The photoelectric conversion layer is arranged between a pair of electrodes at least one of which has optical transparency, and comprises a multilayer film formed by alternately laminating an electron-donating organic semiconductor thin film and an electron-accepting thin film. The electron-donating organic semiconductor thin film is formed by organic semiconductor molecules in which cyclic compounds are bound in a linear fashion.01-21-2010
20100006153HYBRID ORGANIC SOLAR CELLS WITH PHOTOACTIVE SEMINCONDUCTOR NANOPARTICLES ENCLOSED IN SURFACE MODIFIERS - The present invention relates to a solar cell in which semiconductor nanoparticles are surrounded by a photoactive surfactant material in the photoactive layer.01-14-2010
20100006152Carbon Nanotube Based Semiconducting Devices and Methods for Their Production - A method of producing a photo-voltaic device comprising the steps of: synthesising carbon nanotubes; adapting the synthesised carbon nanotubes to provide a surface defect such as to create an effective band gap; selecting an organic semiconductor material which facilitates the efficient energy transfer between carbon nanotubes and the organic material, wherein the organic material is selected such that the energy band gap formed between the HOMO and LUMO energy levels lies within the effective band gap of the adapted carbon nanotubes; combining the adapted carbon nanotubes and the selected organic material to form a composite material.01-14-2010
20130056069SOLAR CELL STRUCTURES, PHOTOVOLTAIC PANELS AND CORRESPONDING PROCESSES - Photovoltaic modules comprise solar cells having doped domains of opposite polarities along the rear side of the cells. The doped domains can be located within openings through a dielectric passivation layer. In some embodiments, the solar cells are formed from thin silicon foils. Doped domains can be formed by printing inks along the rear surface of the semiconducting sheets. The dopant inks can comprise nanoparticles having the desired dopant.03-07-2013
20090056808DYE-SENSITIZED SOLAR CELL WITH METAL OXIDE LAYER CONTAINING METAL OXIDE NANOPARTICLES PRODUCED BY ELECTROSPNNING AND METHOD FOR MANUFACTURING SAME - A dye-sensitized solar cell having improved photoelectric conversion characteristic includes a metal oxide layer having dye-adsorbed metal oxide nanoparticles, wherein the metal oxide nanoparticles are formed by electrospinning a mixed solution of a metal oxide precursor and a polymer into ultrafine composite fibers, and thermally compressing and sintering the ultrafine composite fibers.03-05-2009
20110011458SOLAR CELL AND METHOD FOR MANUFACTURING SOLAR CELL - A method is for manufacturing a solar cell having a plurality of unit cells connected in series, each of the unit cells including a substrate, a first electrode layer formed on the substrate, a semiconductor layer formed on the first electrode layer, and a second electrode layer formed on the semiconductor layer. The method includes forming a fluid-repellent partition portion on the substrate to partition a plurality of regions respectively corresponding to the first electrode layers of the unit cells, and applying a liquid material including a first electrode material for forming the first electrode layers on the regions of the substrate that are partitioned by the partition portion, and baking the applied liquid material to form the first electrode layers.01-20-2011
20130061926SOLAR CELL ELEMENT AND METHOD FOR PRODUCING THE SAME, AND SOLAR CELL MODULE - Provided is a solar cell element comprising a semiconductor substrate which has a p-type semiconductor region, wherein one or more surface layer-internal regions which have Si—O bonds are formed in the surface layer part of the p-type semiconductor region and a passivation layer is formed on the surface layer-internal regions. Also provided is a solar cell module comprising the solar cell element. A method for producing a solar cell element is further provided, said method comprising: a substrate preparation step for preparing a semiconductor substrate which has a p-type semiconductor region; a surface treatment step for exposing the surface of the p-type semiconductor region to plasma produced using an oxygen-containing gas, and forming surface layer-internal regions which have Si—O bonds in the surface layer part of the p-type semiconductor region; and a layer formation process for forming a passivation layer on the surface layer-internal regions.03-14-2013
20090025791TRANSPARENT CONDUCTIVE SUBSTRATE FOR SOLAR CELLS AND METHOD FOR PRODUCING THE SUBSTRATE - To provide a transparent conductive substrate for solar cells, whereby the resistance of the tin oxide layer is low, and the absorption of near infrared light by the tin oxide layer is low.01-29-2009
20080308155Photoelectrode, and Dye-Sensitized Solar Cell and Dye-Sensitized Solar Cell Module Using the Same - A photoelectrode has a conductive substrate and a semiconductor layer formed on the conductive substrate, the semiconductor layer being formed of semiconductor particles, the semiconductor layer having a plurality of layers, the plurality of layers being different in an average particle diameter of semiconductor particles from one another, a distal layer of the plurality of layers, placed at a location farther from the substrate, covering at least a part of side faces of a proximal layer of the plurality of layers, placed at a location closer to the substrate.12-18-2008
20130160853SOLAR CELL HAVING A PN HETERO-JUNCTION - Disclosed herein is a solar cell, which includes a first conductive layer, a photoelectric conversion layer and a second conductive layer. The photoelectric conversion layer is disposed above the first conductive layer. The photoelectric conversion layer includes a silicon substrate and a CIGS layer that is in contact with the silicon substrate, so that a PN hetero-junction is formed between the silicon substrate and the CIGS layer. The second conductive layer is disposed above the photoelectric conversion layer.06-27-2013
20110017299Solar Sheath - The invention is a n-type silicon front contact conductor comprised entirely of at least one or more tube assemblies that allow the capture of electromagnetic radiation in addition to collecting freed electrons from the n-type silicon from the photovoltaic effect of a photovoltaic cell and also providing a means of cooling the wound wire within the tube assemblies with a gas or liquid.01-27-2011
20100089451Curable Liquid Composition, Method Of Coating, Inorganic Substrate, and Semiconductor Device - A curable liquid composition obtained by subjecting hydrogen halosiloxane or hydrogen alkoxysilane to condensation or to hydrolysis and condensation in an organic solvent in which fine polyvalent metal oxide particles with hydroxyl groups are dispersed; a method of forming a hard silica-type layer by applying onto an inorganic substrate the aforementioned composition and then curing the composition; an inorganic substrate with the aforementioned hard silica-type layer; and a semiconductor device comprising the aforementioned inorganic substrate on which a semiconductor layer is formed.04-15-2010
20090151788P-TYPE DOPED LAYER OF PHOTOELECTRIC CONVERSION DEVICE AND METHOD OF FABRICATING THE SAME - A P-type doped layer of a photoelectric conversion device is provided. The P-type doped layer is a double layer structure including a seeding layer and a wide band gap layer disposed thereon. The P-type doped layer with the double layer structure has both high conductivity and high photoelectric performance.06-18-2009
20100243058THIN-FILM PHOTOELECTRIC CONVERSION DEVICE - This invention intends to develop a technique for forming an interlayer with excellent optical characteristics and to provide a photoelectric conversion device having high conversion efficiency. To realize this purpose, a series connection through an intermediate layer is formed in the thin-film photoelectric conversion device of the invention, and the interlayer is a transparent oxide layer in its front surface and n pairs of layers stacked therebehind (n is an integer of 1 or more), wherein each of the pair of layers is a carbon layer and a transparent oxide layer stacked in this order. Film thicknesses of each layer are optimized to improve wavelength selectivity and stress resistance while keeping the series resistance.09-30-2010
20110126908DYE SENSITIZED SOLAR CELL - A dye-sensitized solar cell that includes a semiconductor layer, to which a photosensitive dye generating electrons is adhered; a photo electrode disposed on a side of the semiconductor layer so as to transfer electrons; and an auxiliary electrode disposed on the other side of the semiconductor layer so as to transfer the electrons, and at least one semiconductor layer and at least one auxiliary electrode are stacked alternatively. Thus, an amount of molecules of the photosensitive dye may be increased without increasing the moving distance of electrons, and the efficiency of the solar cell may be increased.06-02-2011
20100252110SOLAR CELL - A solar cell, comprising: a metal substrate having an insulating anodic oxidation film; and a photoelectric conversion layer provided on the metal substrate, whereon the anodic oxidation film has a surface roughness of 0.5 nm to 2 μm and the photoelectric conversion layer comprises a chalcopyrite semiconductor material having a band gap of 1.3 eV to 1.5 eV.10-07-2010
20110284079SOLAR CELL, AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a solar cell having an effective minority charge carrier lifetime (τ11-24-2011
20110168263DESIGN OF HIGHER EFFICIENCY SILICON SOLAR CELLS - Higher efficiency, lower cost silicon based solar cells are provided by modifying the absorption coefficient of Silicon so that it strongly overlaps with the solar spectrum. In one embodiment this is achieved by co doping of the silicon with appropriate impurities. In another embodiment it is achieved by modifying the structure of silicon whereby a portion is converted into Silicon XII having the R8 structure.07-14-2011
20100263726PHOTOELECTRIC CONVERSION ELEMENT AND SOLAR CELL - Provided is a photoelectric conversion element for which a novel compound (dye) exhibiting excellent adsorption to an oxide semiconductor and exhibiting high photoelectric conversion efficiency is used, and also provided is a solar cell employing the photoelectric conversion element. Disclosed is a dye-sensitizing type photoelectric conversion element possessing at least a pair of facing electrodes, a semiconductor layer possessing a semiconductor and a sensitizing dye supported on the semiconductor, and a charge transport layer, wherein the semiconductor layer and the charge transport layer are provided between the facing electrodes, and wherein the sensitizing dye comprises a compound represented by the following Formula (1).10-21-2010
20090183776Solar cell, method of manufacturing the same, and method of texturing solar cell - A solar cell, a method of manufacturing the solar cell, and a method of texturing the solar cell are provided. The method of texturing the solar cell includes depositing metal particles on a solar cell substrate, and etching the solar cell substrate and forming a plurality of hemisphere-shaped grooves on the solar cell substrate to texture a surface of the solar cell substrate.07-23-2009
20100032018Novel Photoactive Polymers - Novel photoactive polymers, as well as related components, articles, systems, and methods are disclosed.02-11-2010
20090242031Photovoltaic Assembly Including a Conductive Layer Between a Semiconductor Lamina and a Receiver Element - A semiconductor donor body is affixed to a receiver element, and a thin semiconductor lamina is cleaved from the donor body, remaining affixed to the receiver element. A photovoltaic assembly is fabricated which includes the lamina and the receiver element, wherein a photovoltaic cell comprises the lamina. The bond between the semiconductor donor body and the receiver element must survive processing to complete the cell, as well as eventual assembly, transport, and operation in a finished photovoltaic module. It has been found that inclusion of a conductive layer such as titanium or aluminum aids bonding between the semiconductor donor body and the receiver element. In some embodiments, the conductive layer may also serve as an electrical contact and/or as a reflective layer.10-01-2009
20110192462SOLAR CELLS - A solar cell is provided herein. The solar cell includes a substantially transparent substrate, a substantially thin and transparent nickel-based conformal layer deposited on the substrate surface, and at least one interconnect formed on the conformal layer to facilitate energy conversion of the solar cell. The conformal layer can be made from a nickel-based material and is designed to enhance ohmic contact to the interconnect. The conformal layer can also act to facilitate the conversion of light energy into electrical current by the interconnect, while minimizing energy loss, such that the overall conversion efficiency of the solar cell can be improved. The conformal layer can further facilitate transmission of electrical current along the solar cell. A method for manufacturing a solar cell is also provided.08-11-2011
20090101209Method of making an antireflective silica coating, resulting product, and photovoltaic device comprising same - A low-index silica coating may be made by forming silica sol including a silane and/or a colloidal silica. The silica precursor may be deposited on a substrate (e.g., glass substrate) to form a coating layer. The coating layer may then be cured and/or fired using temperature(s) of from about 550 to 700° C. A barrier undercoating including a metal oxide, such as, silica, alumina, titania, zirconia, and/or an oxynitride of silica may be deposited between the coating layer and substrate. Preferably, the barrier undercoating does not substantially affect the percent transmission or reflection of the low-index silica coating. The low-index silica based coating may be used as an antireflective (AR) film on a front glass substrate of a photovoltaic device (e.g., solar cell) or any other suitable application in certain example instances.04-23-2009
20090151787Organic thin-film photoelectric conversion element and method of manufacturing the same - The objectives of the present invention are to enable the manufacturing of an organic thin-film photoelectric conversion element under normal atmosphere, improve the photoelectric conversion efficiency of the element, and enhance its durability. A hole-blocking TiO2 layer is created between the photoelectric conversion layer and the electrode by a wet process. In the manufacturing process, the hole-blocking TiO2 layer is air-dried so that it will be an amorphous layer. It is possible to provide a concentration gradient layer of PCBM/P3HT in which the PCBM concentration is higher in a region close to the hole-blocking TiO2 layer. This structure will reduce the electric resistance of that region and minimize the current loss within the photoelectric conversion element. In the vicinity of the hole-blocking TiO2 layer, the PCBM concentration is increased, which in turn makes it easier for electrons to flow into the TiO2 layer since PCBM is electrically conductive. Due to these features, the organic thin-film photoelectric conversion element having the gradient structure of the present embodiment has a high level of photoelectric conversion efficiency and good durability.06-18-2009
20120227810SOLAR CELL STRUCTURES, PHOTOVOLTAIC PANELS AND CORRESPONDING PROCESSES - Photovoltaic modules comprise solar cells having doped domains of opposite polarities along the rear side of the cells. The doped domains can be located within openings through a dielectric passivation layer. In some embodiments, the solar cells are formed from thin silicon foils. Doped domains can be formed by printing inks along the rear surface of the semiconducting sheets. The dopant inks can comprise nanoparticles having the desired dopant.09-13-2012
20120024381TRANSPARENT CONDUCTIVE FILM AND TRANSPARENT CONDUCTIVE FILM LAMINATED BODY AND PRODUCTION METHOD OF SAME, AND SILICON-BASED THIN FILM SOLAR CELL - A transparent conductive film, useful in producing a highly efficient silicon-based thin film solar cell, superior in hydrogen reduction resistance and superior in optical confinement effect; a transparent conductive film laminated body using the same; a production method therefor; and a silicon-based thin film solar cell using this transparent conductive film or the transparent conductive film laminated body, as an electrode. It is provided by a transparent conductive film or the like, characterized by containing zinc oxide as a major component and at least one or more kinds of added metal elements selected from aluminum and gallium, whose content being within a range shown by the following expression (1), and having a surface roughness (Ra) of equal to or larger than 35.0 nm, and a surface resistance of equal to or lower than 65 Ω/□02-02-2012
20090308457Trench Process And Structure For Backside Contact Solar Cells With Polysilicon Doped Regions - A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. A trench structure separates the P-type doped region from the N-type doped region. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. The trench structure may include a textured surface for increased solar radiation collection. Among other advantages, the resulting structure increases efficiency by providing isolation between adjacent P-type and N-type doped regions, thereby preventing recombination in a space charge region where the doped regions would have touched.12-17-2009
20100282322PHOTOELECTRIC CONVERSION ELEMENT AND SOLAR CELL - Provided is a photoelectric conversion element containing a pair of opposite electrodes having therebetween: a semiconductor layer containing a sensitizing dye which is supported by a semiconductor; and a charge transport layer, wherein the sensitizing dye is a compound represented by Formula (1),11-11-2010
20090308456Photovoltaic Structures and Method to Produce the Same - The present disclosure relates to the field of organic optoelectronics. More particularly, the present disclosure relates to photovoltaic structures and to methods to produce the same. One aspect of the disclosure is a photovoltaic structure comprising: 12-17-2009
20100078072SOLAR CELL - A solar cell includes a p-n junction formed by joining a p-type semiconductor and an n-type semiconductor. The p-type semiconductor is a chalcopyrite compound semiconductor with a band gap of 1.5 eV or more within which an intermediate level exists with a half bandwidth of 0.05 eV or more. The intermediate level is different from an impurity level. The chalcopyrite compound semiconductor includes a first element having first electronegativity of 1.9 or more in Pauling units, the first element occupying a lattice site of the semiconductor. A portion of the first element is substituted with a second element having second electronegativity different from the first electronegativity, the second element being a congeneric element of the first element. The intermediate level is created by substituting the first element with the second element.04-01-2010
20100078073SEMICONDUCTOR COMPONENT WITH CONTACTS MADE OF ALLOYED-IN METAL WIRES - A semiconductor component, especially a solar cell comprises a semiconductor substrate of a planar design having a first side and a second side lying opposite thereto, at least one contact structure arranged on at least one side of the semiconductor substrate, the at least one contact structure exhibiting a diffusion barrier to prevent the diffusion of ions from the contact structure into the semiconductor substrate.04-01-2010
20090183775Method of Setting Conditions For Film Deposition, Photovoltaic Device, and Production Process, Production Apparatus and Test Method for Same - A photovoltaic device having a high conversion efficiency is produced in a stable manner. The conditions for film deposition of a microcrystalline silicon photovoltaic layer (07-23-2009
20090205712Front contact solar cell with formed emitter - A bipolar solar cell includes a backside junction formed by an N-type silicon substrate and a P-type polysilicon emitter formed on the backside of the solar cell. An antireflection layer may be formed on a textured front surface of the silicon substrate. A negative polarity metal contact on the front side of the solar cell makes an electrical connection to the substrate, while a positive polarity metal contact on the backside of the solar cell makes an electrical connection to the polysilicon emitter. An external electrical circuit may be connected to the negative and positive metal contacts to be powered by the solar cell. The positive polarity metal contact may form an infrared reflecting layer with an underlying dielectric layer for increased solar radiation collection.08-20-2009
20090283145Semiconductor Solar Cells Having Front Surface Electrodes - Solar cells include a substrate having a light collecting surface thereon and a P-N rectifying junction within the substrate. The P-N rectifying junction includes a base region of first conductivity type (e.g., p-type) and a semiconductor layer of second conductivity type extending between the base region and the light collecting surface. A trench is also provided, which extends through the semiconductor layer and into the base region. First and second electrodes are provided adjacent the light collecting surface. The first electrode is electrically coupled to the semiconductor layer and the second electrode is electrically coupled to the base region, at a location adjacent a bottom of the trench.11-19-2009
20110203666HIGH EFFICIENCY SOLAR CELL USING IIIB MATERIAL TRANSITION LAYERS - A solar cell including a base of single crystal silicon with a cubic crystal structure and a single crystal layer of a second material with a higher bandgap than the bandgap of silicon. First and second single crystal transition layers are positioned in overlying relationship with the layers graduated from a cubic crystal structure at one surface to a hexagonal crystal structure at an opposed surface. The first and second transition layers are positioned between the base and the layer of second material with the one surface lattice matched to the base and the opposed surface lattice matched to the layer of second material.08-25-2011
20080251126Photovoltaic device and method for manufacturing the same - A photovoltaic device uses a single crystal or polycrystalline semiconductor layer which is separated from a single crystal or polycrystalline semiconductor substrate as a photoelectric conversion layer and has a SOI structure in which the semiconductor layer is bonded to a substrate having an insulating surface or an insulating substrate. A single crystal semiconductor layer which is a separated surface layer part of a single crystal semiconductor substrate and is transferred is used as a photoelectric conversion layer and includes an impurity semiconductor layer to which hydrogen or halogen is added on a light incidence surface or on an opposite surface. The semiconductor layer is fixed to a substrate having an insulating surface or an insulating substrate.10-16-2008
20080245415PHOTOELECTRIC CONVERSION DEVICE AND FABRICATION METHOD THEREOF - A photoelectric conversion device includes at least one p-type semiconductor layer made of amorphous like hydrogenated carbon film or diamond like carbon (DLC) film doped with acceptor impurities such as boron (B). In a solar cell having a photoelectric conversion region, hydrogenated carbon is used as substances forming a p-type semiconductor layer, making it possible to provide a solar cell with high photoelectric conversion efficiency.10-09-2008
20090266419IONIC GEL ELECTROLYTE, DYE-SENSITIZED PHOTOELECTRIC CONVERSION DEVICE AND SOLAR CELL - Disclosed is a novel ionic liquid gel electrolyte having high photoelectric conversion efficiency. Also disclosed are a novel dye-sensitized photoelectric conversion device using such an ionic liquid gel electrolyte, and a solar cell composed of such a dye-sensitized photoelectric conversion device. Specifically disclosed is an ionic liquid gel electrolyte obtained by gelling a liquid electrolyte by using an ionic organic oligomer gelling agent represented by the general formulae (1) and (2) below. Also specifically disclosed are a dye-sensitized photoelectric conversion device, wherein the ionic liquid gel electrolyte is arranged between a counter electrode and a dye-absorbed semiconductor substrate which is arranged in contact with a transparent conductive substrate, and a solar cell.10-29-2009
20090165856High-efficiency solar cell and method of manufacturing the same - Provided is a high-efficiency solar cell including a back contact formed on a substrate; a conductive carbon nanotube array formed on the top surface of the back contact; a p-type semiconductor layer formed between a plurality of multi-wall carbon nanotubes composing the conductive carbon nanotube array and on the conductive carbon nanotube array; an n-type semiconductor layer formed on the top surface of the p-type semiconductor layer; and a transparent electrode formed on the top surface of the n-type semiconductor layer and composed of a plurality of hemispheric microlenses.07-02-2009
20090165855PASSIVATION LAYER STRUCTURE OF SOLAR CELL AND FABRICATING METHOD THEREOF - A passivation layer structure of a solar cell, disposed on a substrate, is provided. The passivation layer structure has a first passivation layer and a second passivation layer. The first passivation layer is disposed on the substrate. The second passivation layer is disposed between the substrate and the first passivation layer, and the material of the second passivation layer is an oxide of the material of the substrate. Since the second passivation layer is disposed between the substrate and the first passivation layer, the surface passivation effect and carrier lifetime of a photoelectric device are enhanced, and a photoelectric conversion efficiency of the solar cell is increased as well.07-02-2009
20090165857Photovoltaic Cell - An organic thin-film photovoltaic cell comprises: a transparent conductor layer; a hole transport layer formed on the transparent conductor layer; a photoelectric conversion layer formed on the hole transport layer; an electron transport layer formed on the photoelectric conversion layer; and a counter electrode formed on the electron transport layer, in which: the photoelectric conversion layer is made of a mixture of a p-type semiconductor molecule or p-type polymer and an n-type semiconductor molecule; the electron transport layer contains the n-type semiconductor molecule; and the p-type semiconductor molecule or p-type polymer contained in the photoelectric conversion layer and exposed at an interface between the photoelectric conversion layer and the electron transport layer is in contact with the n-type semiconductor molecule contained in the electron transport layer.07-02-2009
20080276990Substrate surface structures and processes for forming the same - Structures and methods are provided for forming substrates having surface coatings thereon. In one aspect, a structure is provided including a substrate, a surface coating formed on the surface of the substrate, wherein the surface coating comprises a monolayer of dielectric particles, and a dielectric layer having a thickness of less than a height of the dielectric particles. In another aspect of the invention, a method is provided for processing a substrate including providing a substrate having a surface, exposing a solution comprising dielectric particles to the substrate surface, forming a monolayer of dielectric particles from the solution on the substrate surface, depositing a dielectric layer on the substrate surface at a thickness of less than the height of the dielectric particles, and exposing the substrate to a thermal process.11-13-2008
20080276989METHOD OF HYBRID STACKED FLIP CHIP FOR A SOLAR CELL - A method of hybrid stacked Flip Chip for a solar cell onto which semiconductor layers of different materials are stacked in the Flip-Chip technology to solve the problem of lattices mismatch between the layers for further increase of the efficiency of solar cell.11-13-2008
20100139772NANOWIRE SENSITIZED SOLAR CELLS - An inorganic two-phase nanowire structure including an inorganic semiconducting nanoporous charge conducting phase, and, an inorganic semiconductor nanowire array disposed within at least one of the pores of the nanoporous charge conducting phase.06-10-2010
20100139770NANOSTRUCTURE AND NANOCOMPOSITE BASED COMPOSITIONS AND PHOTOVOLTAIC DEVICES - Nanocomposite photovoltaic devices are provided that generally include semiconductor nanocrystals as at least a portion of a photoactive layer. Photovoltaic devices and other layered devices that comprise core-shell nanostructures and/or two populations of nanostructures, where the nanostructures are not necessarily part of a nanocomposite, are also features of the invention. Varied architectures for such devices are also provided including flexible and rigid architectures, planar and non-planar architectures and the like, as are systems incorporating such devices, and methods and systems for fabricating such devices. Compositions comprising two populations of nanostructures of different materials are also a feature of the invention.06-10-2010
20110005596Dye for dye-sensitized solar cell and dye-sensitized solar cell including the same - A dye for a dye-sensitized solar cell and a dye-sensitized solar cell including the same, the dye including a compound represented at least one of Chemical Formula 1 and Chemical Formula 2.01-13-2011
20090084440SEMICONDUCTOR PHOTOVOLTAIC DEVICES AND METHODS OF MANUFACTURING THE SAME - A semiconductor photovoltaic device comprises a semiconductor substrate having a first surface and a second surface, the first surface and the second surface being opposed to each other, a plurality of trenches extending into the semiconductor substrate from the first surface, the first surface being a substantially planar surface, a dopant region in the semiconductor substrate near the first surface and the plurality of trenches, a first conductive layer over the semiconductor substrate, and a second conductive layer on the second surface of the semiconductor substrate.04-02-2009
20100139771Photon enhanced thermionic emission - Photon Enhanced Thermionic Emission (PETE) is exploited to provide improved efficiency for radiant energy conversion. A hot (greater than 200° C.) semiconductor cathode is illuminated such that it emits electrons. Because the cathode is hot, significantly more electrons are emitted than would be emitted from a room temperature (or colder) cathode under the same illumination conditions. As a result of this increased electron emission, the energy conversion efficiency can be significantly increased relative to a conventional photovoltaic device. In PETE, the cathode electrons can be (and typically are) thermalized with respect to the cathode. As a result, PETE does not rely on emission of non-thermalized electrons, and is significantly easier to implement than hot-carrier emission approaches.06-10-2010
20100147384METHOD OF MANUFACTURING A PHOTOVOLTAIC DEVICE AND SYSTEM FOR PATTERNING AN OBJECT - A method of manufacturing a photovoltaic device, which method comprises the steps of providing a first layer structure on an second layer structure so that the first layer structure has an external surface, and an interface with the second layer structure, the first layer structure comprising a thin-film photovoltaic absorber layer; patterning through the first layer structure from the external surface to or into the second layer structure by first mechanically removing material from the first layer structure in a predetermined patterning area, and subsequently removing, by means of laser cleaning, residual material from the mechanical removal in the patterning area; and a system for patterning an object having a first layer structure on an second layer structure, the system comprising a mechanical patterning device and a laser cleaning device, and means for relative movement between the object, and the mechanical patterning device and the laser cleaning device.06-17-2010
20090260688PHOTOVOLTAIC DEVICE - A photovoltaic device includes a silicon substrate, an intrinsic layer, a carbon nanotube structure and a first electrode. The silicon substrate has a front surface and a rear surface. The intrinsic layer is disposed on the front surface of the silicon substrate. The carbon nanotube structure is disposed on the intrinsic layer. The first electrode is disposed on the rear surface of the silicon substrate.10-22-2009
20090183774Thin Film Semiconductor-on-Sapphire Solar Cell Devices - The present invention relates to semiconductor devices suitable for electronic, optoelectronic and energy conversion applications. In a particular form, the present invention relates to the fabrication of a thin film solar energy conversion device and wafer scale module through the combination of single crystal semiconductors, insulators, rare-earth based compounds and sapphire substrates. The use of thin film silicon allows large change in optical absorption co-efficient as a function of wavelength to be optimized for solar cell operation. New types of solar cell devices are disclosed for use as selective solar radiation wavelength absorbing sections to form multi-junction device and exceed single junction limit, without the use of different band gap semiconductors. A method for concentrating and/or recycling solar optical radiation within the active semiconductor layers is also disclosed to form a 1+-sun concentrator solar cell via the use of sapphire substrate and advantageously positioned planar reflector.07-23-2009
20090199901PHOTOVOLTAIC DEVICE COMPRISING A SPUTTER DEPOSITED PASSIVATION LAYER AS WELL AS A METHOD AND APPARATUS FOR PRODUCING SUCH A DEVICE - The present invention refers to a method of producing a photovoltaic device having at least one semiconductor unit comprising the following steps: 08-13-2009
20090199902SILICON SOLAR CELLS COMPRISING LANTHANIDES FOR MODIFYING THE SPECTRUM AND METHOD FOR THE PRODUCTION THEREOF - The aim of the invention is to improve the energy yield efficiency of solar cells. According to the invention, the silicon material is doped with one or more different lanthanides such that said material penetrates into a layer approximately 60 nm deep. Photons, whose energy is at least double that of the 1.2 eV silicon material band gap, are thus converted into at least two photons having energy in the region of the silicon band gap, by excitation and recombination of the unpaired 4f electrons of the lanthanides. As a result, additional photons having advantageous energy close to the silicon band gap are provided for electron-hole pair formation.08-13-2009
20110139250BIFACIAL SOLAR CELL - A bifacial solar cell including a semiconductor substrate of a first conductivity type, a fixed charge layer, a first grid electrode, a semiconductor layer of a second conductivity type and a second grid electrode are provided. The fixed charge layer is located on a rear surface of the semiconductor substrate. The first grid electrode is located over the rear surface of the semiconductor substrate and electrically connected to the rear surface of the semiconductor substrate by penetrating through the fixed charge layer. The semiconductor layer is located on the front surface of the semiconductor layer. The second grid electrode is located over and electrically connected to the semiconductor layer.06-16-2011
20090050203DYE-SENSITIZED PHOTOELECTRIC CONVERSION DEVICE - There is provided a dye-sensitized photoelectric conversion element comprising a porous photoelectrode layer which comprises dye-sensitized porous semiconductor particles, a charge transport layer and an opposite electrode layer in this order, the charge transport layer comprising a solid mixture comprising 0.1 to 50 wt % of carbon material and 50 to 99.9 wt % of ionic liquid based on the total weight thereof, the charge transport layer comprising at most 1 wt % of iodine and at most 0.9 wt % of p-type conductive polymer or comprising neither iodine nor the p-type conductive polymer.02-26-2009
20090050202SOLAR CELL AND METHOD FOR FORMING THE SAME - The invention is directed to a solar cell. The solar cell comprises a silicon layer, a front side electrode and a back side electrode. The silicon layer has a first surface and a second surface. The front side electrode is located on the first surface of the silicon layer. The back side electrode is located on the second surface of the silicon layer. Further, the back side electrode comprises a passivation layer, a first conductive layer and a second conductive layer. The passivation layer is located on the second surface of the silicon layer and has a plurality of holes penetrating through the passivation layer. The first conductive layer is located on the passivation layer and is electrically connected to the silicon layer through the holes. The second conductive layer is located on the first conductive layer.02-26-2009
20090050204PHOTOVOLTAIC DEVICE USING NANOSTRUCTURED MATERIAL - A photovoltaic device where the charge carrier collection occurs in an array of semiconducting nanowires. The structure of the nanowire array enables high conversion efficiency devices to be built at low cost. In one embodiment, the single crystal silicon nanowire elements can be 10-100 microns long, 50-300 nm in diameter, and spaced 100-400 nm center-to-center. Larger or smaller dimensions can be selected with varying results. The nanowire cores are electrically connected to each other through the conductive substrate on the base of the device. A transparent conductor to be applied on top of the n-type layer will form the second electrode.02-26-2009
20080236667Photovoltaic cell, enhanced spectrum conversion film, preparation of enhanced spectrum conversion film - Photovoltaic cell and enhanced spectrum conversion film enhanced spectrum conversion film that moves light emitting spectrum between solar radiation peak wavelength (λ=470 nm) and maximum sensitive wavelength of monocrystal silicon chip to light (λ=860˜880 nm) with battery percent of effectiveness 14˜16%. The enhanced spectrum conversion film transfers radiation of solar short-wavelength visible light to yellow and yellow orange color. The enhanced spectrum conversion film is an oxygen-contained polymer filled with fluorescent powder particles that are prepared from an oxide compound of group II or III and using a starter that has electron transition in d-layer and f-layer. The fluorescent powder is composed of aluminate solid solution of barium and yttrium, having the chemical formula Ba10-02-2008
20090107549PERCOLATING AMORPHOUS SILICON SOLAR CELL - The present invention generally comprises a solar cell and a solar cell fabrication process. Photogenerated electrons and electron-holes may have a short lifetime or low mobility that permits the electrons or electron-holes to recombine before reaching the junction. A percolating solar cell device may shorten the distance that the electrons and electron-holes need to travel to reach the junction. The percolating solar cell may be formed by depositing a silicon containing layer with poragens and then decomposing the poragens to create openings such as pores in the silicon containing layer. In one embodiment, the silicon containing layer is deposited and then etched anodically to create openings in the silicon containing layer. The layer deposited over the silicon containing layer may extend into the openings. By extending into the openings, the distance to the junction for electrons and electron-holes may be reduced and more electrons and electron-holes may reach the junction.04-30-2009
20090308454INSULATING COATING, METHODS OF MANUFACTURE THEREOF AND ARTICLES COMPRISING THE SAME - Disclosed herein is an article comprising a metallic substrate; an insulating layer; the insulating layer being disposed on the metallic layer in an expanding thermal plasma; and a semiconductor layer; the semiconductor layer being disposed on the insulating layer. Disclosed herein too is a method comprising disposing an insulating layer on a metallic substrate; the insulating layer being in intimate contact with the metallic layer; wherein the insulating layer is derived from a metal-organic precursor, and wherein insulating layer is deposited in an expanding thermal plasma; and disposing a semiconductor layer on the insulating layer.12-17-2009
20090250113SOLAR CELL - A solar cell includes a back electrode, a single crystal silicon substrate, and a carbon nanotube structure. The single crystal silicon substrate includes an upper surface and a lower surface. The back electrode is located on and electrically connected to the lower surface of the single crystal silicon substrate. The carbon nanotube structure is located on and connected to the upper surface of the single crystal silicon substrate. The carbon nanotube structure includes an upper surface and a lower surface.10-08-2009
20090255584CONDUCTIVE COMPOSITIONS AND PROCESSES FOR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES - A thick film conductive composition comprising electrically conductive material, rhodium-containing additive, one or more glass frits, and an organic medium.10-15-2009
20100263725METHOD FOR MANUFACTURING A SOLAR CELL WITH A SURFACE-PASSIVATING DIELECTRIC DOUBLE LAYER, AND CORRESPONDING SOLAR CELL - A solar cell with a dielectric double layer and also a method for the manufacture thereof are described. A first dielectric layer (10-21-2010
20090250114PHOTOVOLTAIC DEVICE - A photovoltaic device includes a silicon substrate, a doped silicon layer, a first electrode and a second electrode. The silicon substrate has a plurality of cavities defined therein. The doped silicon layer is formed in contact the silicon substrate. The first electrode including a plurality of carbon nanotube cables is adjacent to the silicon substrate. The second electrode is attached to the silicon substrate.10-08-2009
20100147383METHOD AND APPARATUS FOR LASER-PROCESSING A SEMICONDUCTOR PHOTOVOLTAIC APPARATUS - The present disclosure is directed to a method for automated manufacturing thin film solar cells including a laser processed layer. The method includes depositing a plurality of substantially planar layers in proximity with one another, including at least a first semiconductor layer, feeding the plurality of layers through a plurality of processing steps, irradiating at least a portion of a layer of the plurality of layers with a source of laser radiation, and using a control computer to control at least one of the acts of feeding and irradiating in the automated manufacture of the thin film solar cells.06-17-2010
20090255585FLEXIBLE PHOTOVOLTAIC DEVICE - An embodiment of a photovoltaic cell forms a barrier layer over a flexible substrate and forms a plurality of parallel lines of N-type semiconductor material directly on the barrier layer. A plurality of parallel lines of P-type semiconductor material are formed directly on the barrier layer and positioned with each line of the plurality of parallel lines of P-type semiconductor material having at least one common longitudinal boundary with one line of the plurality of parallel lines of N-type semiconductor material. A plurality of first conductive bus lines are in longitudinal contact with at least a subset of the plurality of parallel lines of N-type semiconductor material, and a plurality of second conductive bus lines are in longitudinal contact with at least a subset of the plurality of parallel lines of P-type semiconductor material.10-15-2009
20090255583ALUMINUM PASTES AND USE THEREOF IN THE PRODUCTION OF SILICON SOLAR CELLS - Aluminum pastes comprising particulate aluminum, a tin-organic component and an organic vehicle and their use in forming p-type aluminum back electrodes of silicon solar cells.10-15-2009
20100186822HIGH EFFICIENCY GROUP III-V COMPOUND SEMICONDUCTOR SOLAR CELL WITH OXIDIZED WINDOW LAYER - The present application utilizes an oxidation process to fabricating a Group III-V compound semiconductor solar cell device. By the oxidation process, a window layer disposed on a cell unit is oxidized to enhance the efficiency of the solar cell device. The oxidized window has an increased band gap to minimize the surface recombination of electrons and holes. The oxidized window also improves transparency at the wavelengths that were absorbed in the conventional window layer.07-29-2010
20100258188Thin Film Type Solar Cell and Method for Manufacturing the Same - A thin film type solar cell and a method for manufacturing the same is disclosed, which the thin film type solar cell comprises a front electrode, a semiconductor layer, and a rear electrode sequentially deposited on a substrate; and a buffer layer between the substrate and the front electrode so as to enhance an adhesive strength between the substrate and the front electrode, and to improve transmittance of solar ray incident through the substrate.10-14-2010
20090101210CONDUCTIVE COMPOSITIONS AND PROCESSES FOR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES: MULTIPLE BUSBARS - Described herein are a silicon semiconductor device with multiple busbars, and a conductive silver paste for use in the front side of a solar cell device.04-23-2009
20090314349Microcrystalline Silicon Film Forming Method and Solar Cell - Object of this invention is to provide a plasma CVD method capable of forming a microcrystalline silicon film at low hydrogen gas flow rate, thereby providing a low-cost microcrystalline silicon solar cell.12-24-2009
20100193032Solar Cell Systems - The invention includes optoelectronic devices containing one or more layers of semiconductor-enriched insulator (with exemplary semiconductor-enriched insulator being silicon-enriched silicon oxide and silicon-enriched silicon nitride), and includes solar cells containing one or more layers of semiconductor-enriched insulator. The invention also includes methods of forming optoelectronic devices and solar cells.08-05-2010
20100193031Methods and Apparatuses for Manufacturing Cast Silicon From Seed Crystals - Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With such methods and apparatuses, a cast body of monocrystalline or bi-crystal silicon may be formed that is free of, or substantially free of, radially-distributed impurities and defects and having at least two dimensions that are each at least about 35 cm is provided.08-05-2010
20090044862Solar cell and method of producing the same - A solar cell comprises a substrate; an n-type barium silicide layer being arranged on the substrate and containing Ba atoms and Si atoms; an n02-19-2009
20120031491Single P-N Junction Tandem Photovoltaic Device - A single P-N junction solar cell is provided having two depletion regions for charge separation while allowing the electrons and holes to recombine such that the voltages associated with both depletion regions of the solar cell will add together. The single p-n junction solar cell includes an alloy of either InGaN or InAlN formed on one side of the P-N junction with Si formed on the other side in order to produce characteristics of a two junction (2J) tandem solar cell through only a single P-N junction. A single P-N junction solar cell having tandem solar cell characteristics will achieve power conversion efficiencies exceeding 30%.02-09-2012
20080314445METHOD FOR THE PREPARATION OF HIGH PURITY SILICON - A method of forming high-purity elemental silicon is disclosed. The method includes the step of heating a silica gel composition, or an intermediate composition derived from a silica gel composition, wherein the silica gel composition or intermediate composition includes at least about 5% by weight carbon, and the heating temperature is above about 1550° C. The heating step results in the production of a product which includes elemental silicon. Another aspect of the invention relates to a method for making a photovoltaic cell. The method includes the step of forming a semiconductor substrate from elemental silicon prepared as described in this disclosure. Additional steps are then undertaken to fabricate the photovoltaic device.12-25-2008
20100236627SUBSTRATE FOR SOLAR CELL AND SOLAR CELL - A substrate for a solar cell, containing a metal substrate and an insulating anodic oxidation film provided on the metal substrate, wherein the thickness T09-23-2010
20100224251METHOD OF MANUFACTURING SOLAR CELL - A method of manufacturing a solar cell includes the steps of forming on one main surface of a silicon substrate, a first conductivity type impurity layer and a mask layer lying thereon, applying a pattern of an etching paste capable of etching the mask layer and the first conductivity type impurity layer onto the mask layer, subjecting the silicon substrate to heat treatment such that a partial region of the silicon substrate is exposed by etching away the mask layer and the first conductivity type impurity layer in a region of the pattern of the etching paste, forming a second conductivity type impurity layer in the exposed partial region of the silicon substrate, and removing the mask layer. In addition, a solar cell manufactured with the method of manufacturing a solar cell is provided.09-09-2010
20100224250Solar cell device structure - A solar cell device structure, that is applicable in a concentrator solar cell device structure, comprising a silicon substrate, an insulation layer, and a solar chip. Wherein, the insulation layer is provided on the silicon substrate, a pattern region is provided on the insulation layer, and the solar chip is disposed in the pattern region. Due to the various advantages of superior heat conduction, low cost, and maturity of silicon semiconductor manufacturing technology of a silicon substrate, it is utilized to replace the ceramic substrate of the prior art, hereby raising the heat dissipation efficiency and reducing the production cost.09-09-2010
20100276002PROCESS AND APPARATUS FOR PRODUCING POLYSILICON SHEETS - The present invention relates to a process for producing polysilicon wafer and a dual temperature field chemical vapor deposition apparatus for implementing the process. The process for producing polysilicon wafer is based on the formation of the polysilicon wafer through the reaction of trichlorosilane with hydrogen on the substrate. The dual temperature field chemical vapor deposition apparatus includes a reactor and a substrate, wherein the reactor has a closed space defined by a gas-feeding unit, a reaction heating furnace, a substrate heating furnace, and a substrate housing box, the gas-feeding unit is positioned on the reaction heating furnace and is contact with a water-cooling unit at the outer wall of the reaction heating furnace, the substrate heating furnace is positioned under the reaction heating furnace, the substrate moves along the gap between the reaction heating furnace and the substrate heating furnace.11-04-2010
20100154889ELECTROLYTE COMPOSITION AND DYE-SENSITIZED SOLAR CELL USING THE SAME - The invention provides an electrolyte composition and dye-sensitized solar cell using the same. The electrolyte composition includes a diionic liquid of Formula: Z06-24-2010
20100243059SOLAR BATTERY CELL - Disclosed is a solar battery cell comprising: a crystalline silicon substrate; a cell electrode for extracting external electric power formed on a light-receiving surface of the crystalline silicon substrate; a front surface tab line connected to the cell electrode; a rear surface electrode formed on a reverse light-receiving surface of the crystalline silicon substrate; and a rear surface tab line connected to the rear surface electrode, wherein the rear surface electrode and the rear surface tab line are connected with a resin conductive paste or conductive film, and the rear surface electrode is uniformly formed on the reverse light-receiving surface of the crystalline silicon substrate. The solar battery cell can improve efficiency of electric power generation and decrease costs for members thereof.09-30-2010
20100126587Method and Structure for Fabricating Multiple Tiled Regions Onto a Plate Using a Controlled Cleaving Process - A reusable transfer substrate member for forming a tiled substrate structure. The member including a transfer substrate, which has a surface region. The surface region comprises a plurality of donor substrate regions. Each of the donor substrate regions is characterized by a donor substrate thickness and a donor substrate surface region. Each of the donor substrate regions is spatially disposed overlying the surface region of the transfer substrate. Each of the donor substrate regions has the donor substrate thickness without a definable cleave region.05-27-2010
20100252111PASTE COMPOSITION AND SOLAR CELL ELEMENT - Provided are a paste composition capable of achieving a BSF effect which is equivalent to or greater than a conventionally achieved BSF effect even when used in either case where a thin back surface electrode layer is formed on a thick silicon semiconductor substrate or case where a thin back surface electrode layer is formed on a thin silicon semiconductor substrate and, when used in a case where a thin back surface electrode layer is formed on a thin silicon semiconductor substrate, not only capable of achieving a BSF effect which is equivalent to or greater than a conventionally achieved BSF effect, but also capable of more suppressing deformation of the silicon semiconductor substrate after being fired, than in a case where the conventional paste composition is used in order to form a thin back surface electrode layer; and a solar cell element comprising an electrode formed by using the paste composition. The paste composition comprises aluminum powder as electrically conductive powder and the aluminum powder includes flaky aluminum particles. The solar cell element comprises a back surface electrode (10-07-2010
20100252109THIN FILM TYPE SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME - A thin film type solar cell and a method for manufacturing the same is disclosed, which can overcome various problems caused by a related art laser-scribing procedure since the thin film type solar cell is divided into a plurality of sub-cells through the use of auxiliary electrode or partition wall, the thin film type solar cell comprising a substrate; a front electrode layer and a cell-dividing part on the substrate; and a rear electrode on the semiconductor layer.10-07-2010
20100200065Photovoltaic Cell and Fabrication Method Thereof - The present structure and method for fabrication thereof provides a photovoltaic cell structure for converting light energy into electrical energy. According to one embodiment, a pillared photovoltaic cell structure comprises an array of pillars that are situated closely to each other to take advantage of both the wave-like properties and the particle-like properties of light to enhance the energy conversion efficiency of the photovoltaic cell. According to one embodiment, a pillared photovoltaic cell structure incorporating self-aligned P/P+ junctions enable holes generated near the top surface of the cell structure to be captured by the self-aligned P/P+ junctions.08-12-2010
20110056560SOLAR CELL MODULE AND MANUFACTURING METHOD THEREOF - Reduction in characteristic due to non-uniformity of crystallinity of a microcrystalline silicon film in a surface of a solar cell module is inhibited. A solar cell module is provided having an i-type layer of a microcrystalline silicon film as a photovoltaic layer in a photovoltaic unit (03-10-2011
20090020158Method for manufacturing solar cell and solar cell, and method for manufacturing semiconductor device - The present invention is a method for manufacturing a solar cell by forming a p-n junction in a semiconductor substrate having a first conductivity type, wherein, at least: a first coating material containing a dopant and an agent for preventing a dopant from scattering, and a second coating material containing a dopant, are coated on the semiconductor substrate having the first conductivity type so that the second coating material may be brought into contact with at least the first coating material; and, a first diffusion layer formed by coating the first coating material, and a second diffusion layer formed by coating the second coating material the second diffusion layer having a conductivity is lower than that of the first diffusion layer are simultaneously formed by a diffusion heat treatment; a solar cell manufactured by the method; and a method for manufacturing a semiconductor device. It is therefore possible to provide the method for manufacturing the solar cell, which can manufacture the solar cell whose photoelectric conversion efficiency is improved at low cost and with a simple and easy method by suppressing surface recombination in a portion other than an electrode of a light-receiving surface and recombination within an emitter while obtaining ohmic contact; the solar cell manufactured by the method; and the method for manufacturing the semiconductor device.01-22-2009
20090288708Method for passivating a substrate surface - A method for passivating at least a part of a surface of a semiconductor substrate, wherein at least one layer comprising at least one SiOx layer is realized on said part of the substrate surface by: —placing the substrate (11-26-2009
20080230122PHOTVOLTAIC DEVICE AND METHOD OF MANUFACTURING THE SAME - A photovoltaic device capable of improving an output characteristic is obtained. This photovoltaic device includes a first conductivity type crystalline silicon region, a second conductivity type first noncrystalline silicon layer and a substantially intrinsic second noncrystalline silicon layer arranged between the crystalline silicon region and the first noncrystalline silicon layer, and the crystalline silicon region has an aperiodic corrugated shape having a height of not more than 2 nm on the interface between the same and the second noncrystalline silicon layer.09-25-2008
20080230121PHOTOVOLTAIC DEVICE AND MANUFACTURING METHOD THEREOF - A photovoltaic device capable of improving an output characteristic is provided. The photovoltaic device includes an n-type single-crystal silicon substrate, a p-type amorphous silicon substrate, and a substantially intrinsic i-type amorphous silicon layer disposed between the n-type single-crystal silicon substrate and the p-type amorphous silicon layer. The i-type amorphous silicon layer includes: a first section which is located on the n-type single-crystal silicon substrate side, and which has an oxygen concentration equal to or below 1009-25-2008
20110126907SOLAR CELL AND METHOD OF MANUFACTURING THE SAME - A solar cell includes; a semiconductor substrate, an n+ region disposed on a surface of the semiconductor substrate, a plurality of first electrodes connected to the n+ region, a p+ region disposed on the surface of the semiconductor substrate and separated from the n+ region, a second electrode connected to the p+ region, and a first dielectric layer which has a positive fixed charge and is disposed between adjacent first electrodes of the plurality of first electrodes, and a method of manufacturing the same.06-02-2011
20110126906SOLAR CELL AND METHOD OF MANUFACTURING THE SAME - A solar cell includes a semiconductor substrate, an n+ region and a p+ region disposed on the semiconductor substrate, a first electrode electrically connected to the n+ region, and a second electrode electrically connected to the p+ region. A trench formed in the semiconductor substrate separates the n+ region from the p+ region.06-02-2011
20110126905DYE-SENSITIZED SOLAR CELL INCLUDING SPACERS - A dye-sensitized solar cell is disclosed. The dye-sensitized solar cell includes a plurality of spacers disposed between a photoelectrode and a counter electrode to maintain a uniform distance between the photoelectrode and the counter electrode. First ends of the plurality of spacers are melted and fixed to the counter electrode. The counter electrode includes a grid, a protective layer is formed on the grid, and the first ends of the plurality of spacers are fixed (or thermally fixed) to the protective layer.06-02-2011
20110030793METHOD FOR PRODUCING PHOTOVOLTAIC-GRADE CRYSTALLINE SILICON BY ADDITION OF DOPING IMPURITIES AND PHOTOVOLTAIC CELL - Production of photovoltaic grade crystalline silicon is achieved by crystallization of a molten silicon feedstock, the sum of the initial donor doping element and acceptor doping element concentrations whereof is greater than 0.1 ppma, and both the acceptor and donor doping element concentrations whereof are less than 25 ppma. At least a predefined quantity of a doping material having a segregation coefficient of less than 0.1 is added to the feedstock. This addition enables a crystallized silicon to be produced the difference between the donor and acceptor doping profiles whereof is comprised between 0.1 and 5 ppma over at least 50% of the solidified silicon. A silicon presenting a concentration of at least one of the dopants is greater than or equal to 5 ppma and a difference less than or equal to 5 ppma between these two types of dopant is integrated in a photovoltaic cell.02-10-2011
20090065056HYBRID PHOTOVOLTAICALLY ACTIVE LAYER AND METHOD FOR FORMING SUCH A LAYER - A “hybrid” photovoltaically active layer is homogenous (in a direction parallel to the major surfaces of the layer) with respect to film constituents, but is non-homogenous with respect to photovoltaic properties. First regions exhibit high absorptivity, while second regions that are perpendicular to the major surfaces of the layer exhibit a higher carrier mobility. The method for forming the layer includes one or all of chemical vapor deposition, the hollow cathode effect, and high power DC pulsing.03-12-2009
20120067423Flexible Monocrystalline Thin Silicon Cell - A device, system, and method for solar cell construction and layer transfer are disclosed herein. An exemplary method of solar cell construction involves providing a silicon donor substrate. A porous layer is formed on the donor substrate. A first portion of a solar cell is constructed on the porous layer of the donor substrate. The solar cell and donor substrate are bonded to a flexible substrate. The flexible substrate and the first portion of a solar cell are then separated from the donor substrate at the porous layer. A second portion of a solar cell may then be constructed on the first portion of a solar cell providing a single completed solar cell.03-22-2012
20090242032PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR MANUFACTURING THE SAME - To provide a resource-saving photoelectric conversion device with excellent photoelectric conversion characteristics. Thin part of a single crystal semiconductor substrate, typically a single crystal silicon substrate, is detached to structure a photoelectric conversion device using a thin single crystal semiconductor layer, which is the detached thin part of the single crystal semiconductor substrate. The thin part of the single crystal semiconductor substrate is detached by a method in which a substrate is irradiated with ions accelerated by voltage, or a method in which a substrate is irradiated with a laser beam which makes multiphoton absorption occur. A so-called tandem-type photoelectric conversion device is obtained by stacking a unit cell including a non-single-crystal semiconductor layer over the detached thin part of the single crystal semiconductor substrate.10-01-2009
20110240124METAL PASTES AND USE THEREOF IN THE PRODUCTION OF SILICON SOLAR CELLS - Metal pastes comprising (a) at least one electrically conductive metal powder selected from the group consisting of silver, copper and nickel, (b) at least one lead-containing glass frit with a softening point temperature in the range of 571 to 636° C. and containing 53 to 57 wt.-% of PbO, 25 to 29 wt.-% of SiO10-06-2011
20100059119SOLAR CELL AND METHOD OF MANUFACTURING THE SAME - Provided are a solar cell and a method of manufacturing the same. The solar cell includes a substrate; and a light-absorbing layer formed below the substrate and comprising a plurality of semiconductor layers which comprise Si or SiGe and have different Ge composition ratios. According to the present invention, stress and crystal defects that may occur by sudden changes of the composition of Ge can be minimized, and a more efficient solar cell can be fabricated.03-11-2010
20100065121PHOTOELECTRIC CONVERSION ELEMENT - A photoelectric conversion element comprises a solar-energy epitaxial layer, a bond layer and a LED epitaxial layer, which are stacked sequentially. The bond layer has a plurality of holes allowing light to pass. The solar-energy epitaxial layer receives light via the holes and generates electric energy, and an external secondary battery stores the electric energy. When environmental illumination disappears, the LED epitaxial layer is powered by the external secondary battery to emit light. When the photoelectric conversion element of the present invention applies to outdoor traffic signs, advertisement signboards and indicators, they can operate without external power supply.03-18-2010
20110073184METHOD FOR MANUFACTURING MONOCRYSTALLINE THIN FILM AND MONOCRYSTALLINE THIN FILM DEVICE MANUFACTURED THEREBY - The present invention provides a method for manufacturing a monocrystalline film and a device formed by the above method, and according to the method mentioned above, lift-off of the monocrystalline silicon film is preferably performed and a high-purity monocrystalline silicon film can be obtained. A monocrystalline silicon substrate (template Si substrate) 03-31-2011
20110100462Dye-sensitized solar cell and photoanode thereof - A dye-sensitized solar cell, a photoanode thereof, and a method for manufacturing the same are disclosed. The photoanode of the dye-sensitized solar cell of the present invention is prepared by a porous semiconductor layer absorbing two kinds of organic sensitized dyes, and one organic sensitized dye is represented by the following formula (I):05-05-2011
20110100461ELECTROLYTE COMPOSITION AND DYE-SENSITIZED SOLAR CELL HAVING THE SAME - The present invention provides an electrolyte composition for a dye-sensitized solar cell, and the electrolyte composition includes 2 to 25 wt % of an organic amine hydroiodide; 2 to 25 wt % of an imidazolium salt; 0.5 to 5 wt % of iodine; 1 to 5 wt % of guanidine thiocyanate; 2 to 15 wt % of a benzimidazole derivative, a pyridine derivative or a combination thereof; and 50 to 92.5 wt % of a solvent. The present invention further provides a dye-sensitized solar cell, including a photoanode, a cathode having a surface in contact with the photoanode; and an electrolyte layer formed on the surface of the cathode. The dye-sensitized solar cell having the electrolyte composition of the present invention has outstanding photoelectric conversion efficiency and stability, and also the ingredients of the electrolyte composition have great compatibility to one another.05-05-2011
20110073185PHOTOVOLTAIC DEVICE AND PROCESS FOR PRODUCING PHOTOVOLTAIC DEVICE - A photoelectric conversion apparatus (03-31-2011
20110067759SOLAR CELL AND MANUFACTURING METHOD THEREOF - A solar cell includes; a substrate; a first electrode disposed on the substrate, and including a first groove formed therein, a semiconductor layer disposed on the first electrode, and including a second groove formed therein, and a second electrode disposed on the semiconductor layer and connected to the first electrode via the second groove, wherein a third groove passing through the first electrode, the semiconductor layer, and the second electrode is formed in a first region, a fourth groove passing through only the semiconductor layer and the second electrode is formed in a second region, and the first region and the second region are alternately disposed along a direction of extension of the third groove.03-24-2011
20090025790FLEXIBLE SOLAR CELL - The present invention relates to a flexible solar cell (01-29-2009
20110017298MULTI-JUNCTION SOLAR CELL DEVICES - A photovoltaic cell structure for manufacturing a photovoltaic device. The photovoltaic cell structure includes a substrate including a surface region. A first conductor layer overlies the surface region. The photovoltaic cell structure includes a lower cell structure. The lower cell structure includes a first P type absorber layer using a first semiconductor metal chalcogenide material and/or other semiconductor material overlying the first conductor layer. The first P type absorber material is characterized by a first bandgap ranging from about 0.5 eV to about 1.0 eV, a first optical absorption coefficient greater than about 1001-27-2011
20100252108COPPER DELAFOSSITE TRANSPARENT P-TYPE SEMICONDUCTOR MATERIALS FOR DYE SENSITIZED SOLAR CELLS - Methods for fabrication of copper delafossite materials include a low temperature sol-gel process for synthesizing CuBO10-07-2010
20100243057SEMICONDUCTOR DEVICE, PHOTOELECTRIC CONVERTER AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERTER - The semiconductor device according to the present invention includes: a semiconductor substrate; an integrated circuit formed on the semiconductor substrate; and a photoelectric converter, stacked on the integrated circuit, having a light absorbing layer made of a compound semiconductor having a chalcopyrite structure.09-30-2010
20100101648DYE-SENSITIZED PHOTOELECTRIC CONVERSION DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a dye-sensitized photoelectric conversion device is provided by which a dye-sensitized photoelectric conversion device being excellent in strength and durability and free of any projection, as a result of the absence of need for an end seal, can be fabricated through simple manufacturing steps. In manufacturing a dye-sensitized photoelectric conversion device which has an electrolyte between a dye-sensitized semiconductor layer and a counter electrode and which also has a first armor member provided on the outside of the dye-sensitized semiconductor layer and a second armor member provided on the outside of the counter electrode, a sealing material and the electrolyte are formed at predetermined locations of one or both of the first armor member and the second armor member, thereafter the first armor member and the second armor member, with the sealing material and the electrolyte sandwiched therebetween, are adhered to each other with the sealing material under a gas pressure of not higher than the atmospheric air pressure and not lower than the vapor pressure of the electrolyte.04-29-2010
20080314447Single P-N Junction Tandem Photovoltaic Device - A single P-N junction solar cell is provided having two depletion regions for charge separation while allowing the electrons and holes to recombine such that the voltages associated with both depletion regions of the solar cell will add together. The single p-n junction solar cell includes an alloy of either InGaN or InAlN formed on one side of the P-N junction with Si formed on the other side in order to produce characteristics of a two junction (2J) tandem solar cell through only a single P-N junction. A single P-N junction solar cell having tandem solar cell characteristics will achieve power conversion efficiencies exceeding 30%.12-25-2008
20110174376Monocrystalline Thin Cell - A device, system, and method for solar cell construction and bonding/layer transfer are disclosed herein. An exemplary structure of solar cell construction involves providing a monocrystalline donor absorber layer. A conductive bonding layer bonds the absorber layer to a carrier substrate. A porous layer or ion implant may be used to form the donor absorber layer.07-21-2011
20110108114SOLAR CELL AND METHOD OF MANUFACTURING SAME - This solar cell has: a light transmissive first electrode; a photoelectric conversion layer formed of silicon; a light transmissive buffer layer; and a second electrode formed of a light reflective alloy. The second electrode is formed of a silver alloy including silver (Ag) as a main component with at least one of tin (Sn) and gold (Au) contained therein.05-12-2011
20120199202METHOD FOR FABRICATING PHOTOVOLTAIC CELLS - A method for fabricating a crystalline silicon photovoltaic cell is disclosed. In one aspect, the method includes a) providing a crystalline silicon substrate of a first dopant type, b) performing an implantation, thereby introducing dopants of a second type opposite to the first type at a front side of the crystalline silicon substrate, c) after the implantation, depositing a hydrogen containing layer on the front surface of the substrate, and d) after depositing the hydrogen containing layer, performing a thermal treatment, thereby electrically activating the dopant of the second type.08-09-2012
20110000545Photoelectric Conversion Device and Manufacturing Method Thereof - A stack including a first electrode, a first impurity semiconductor layer having one conductivity type, an intrinsic semiconductor layer, a second impurity semiconductor layer having an opposite conductivity type to the one conductivity type, and a light-transmitting second electrode is formed over an insulator. The light-transmitting second electrode and the second impurity semiconductor layer have one or more openings. The shortest distance between one portion of the wall of one opening and an opposite portion of the wall of the same opening at the level of the interface between the second impurity semiconductor layer and the intrinsic semiconductor layer is made smaller than the diffusion length of holes in the intrinsic semiconductor layer. Thus, recombination is suppressed, so that more photocarriers are generated due to the openings and taken out as current, whereby conversion efficiency is increased.01-06-2011
20110162716DEVICE FOR FABRICATING A PHOTOVOLTAIC ELEMENT WITH STABILISED EFFICIENCY - A method and device for fabricating a photovoltaic element with stabilized efficiency is proposed. The method comprises the following steps: preparing a boron-doped, oxygen-containing silicon substrate; forming an emitter layer on a surface of the silicon substrate; and a stabilization treatment step. The stabilization treatment step comprises keeping the temperature of the substrate during a treatment time within a selectable temperature range having a lower temperature limit of 50° C., preferably 90° C., more preferably 130° C. and even more preferably 160° C. and an upper temperature limit of 230° C., preferably 210° C., more preferably 190° C. and even more preferably 180° C., and generating excess minority carriers in the silicon substrate during the treatment time, for example, by illuminating the substrate or by applying an external voltage. This method can be used to fabricate a photovoltaic element, e.g. a solar cell or a solar module having an efficiency which is stable at a value higher than that of photovoltaic elements fabricated without the stabilization treatment step.07-07-2011
20100282323CONTROLLED PROCESS AND RESULTING DEVICE - A technique for forming a film of material (11-11-2010
20100282321Silicon microspheres and photonic sponges, production process and their applications - The invention describes a microsphere with diameter from 0.1 to 50 micrometers, made of a material selected from the group consisting of: silicon, doped silicon, Si11-11-2010
20100180948PASTE COMPOSITION AND SOLAR CELL ELEMENT - Provided are a paste composition which is capable of sufficiently achieving at least a BSF effect equivalent to or greater than a conventionally achieved BSF effect even when the paste composition is used in either case where a thick back surface electrode layer is formed on a thick silicon semiconductor substrate or where a thin back surface electrode layer is formed on a thin silicon semiconductor substrate and which is capable of not only achieving the BSF effect equivalent to or greater than the conventionally achieved BSF effect but also suppressing a deformation of the silicon semiconductor substrate after being fired when the paste composition is used in the case where the thin back surface electrode layer is formed on the thin silicon semiconductor substrate; and a solar cell element comprising an electrode formed by using the above-mentioned paste composition. The paste composition comprises aluminum powder as electrically conductive powder, and a total content of iron and titanium contained therein as inevitable impurity elements is less than or equal to 0.07% by mass. The solar cell element comprises a back surface electrode (07-22-2010
20110253216TRANSITION METAL COMPLEXES, MANUFACTURING METHOD THEREOF, PHOTOVOLTAIC CELLS AND MANUFACTURING METHOD THEREOF - This invention provides a transition metal complex of formula MXY10-20-2011
20090308455GERMANIUM-ENRICHED SILICON MATERIAL FOR MAKING SOLAR CELLS - Techniques for the formation of silicon ingots and crystals using silicon feedstock of various grades are described. Common feature is adding a predetermined amount of germanium to the melt and performing a crystallization to incorporate germanium into the silicon lattice of respective crystalline silicon materials. Such incorporated germanium results in improvements of respective silicon material characteristics, mainly increased material strength. This leads to positive effects at applying such materials in solar cell manufacturing and at making modules from those solar cells. A silicon material with a germanium concentration in the range (50-200) ppmw demonstrates an increased material strength, where best practical ranges depend on the material quality generated.12-17-2009
20100024883Silole-Based Polymers and Semiconductor Materials Prepared from the Same - The present teachings provide silole-based polymers that can be used as p-type semiconductors. More specifically, the present teachings provide polymers that include a repeating unit of Formula I:02-04-2010
20100018580Method for the Manufacture of a Solar Cell and the Resulting Solar Cell - In a method for the manufacture of a solar cell from a silicon substrate to the front and back surfaces are firstly applied a first antireflection coating with an optical refractive index n between 3.6 and 3.9. To the latter is applied a second antireflection with an optical refractive index n between 1.94 and 2.1. The antireflection coatings are separated down to the underlying silicon substrate in order to introduce metal contacts to the silicon substrate into the antireflection coatings.01-28-2010
20100018579FIBER PHOTOVOLTAIC DEVICES AND METHODS FOR PRODUCTION THEREOF - In various embodiments, fiber photovoltaic devices are described in the present disclosure. The fiber photovoltaic devices include an optical filament, a first electrode coating the optical filament, a continuous semiconductive layer deposited above the first electrode layer, and a second electrode layer deposited above the continuous semiconductive layer. The first electrode layer is at least partially transparent to electromagnetic radiation. The continuous semiconductive layer is in electrical contact with the first electrode layer. The continuous semiconductive layer absorbs electromagnetic radiation and turns the electromagnetic radiation into an electrical signal. The continuous semiconductive layer includes at least two semiconductive materials that are substantially unmixed and are located in separate regions along the longitudinal axis of the fiber photovoltaic device. The second electrode layer is in electrical contact with the continuous semiconductive layer. In various embodiments, photovoltaic collectors including a plurality of the fiber photovoltaic devices are described. In various embodiments, methods for production of fiber photovoltaic devices by a dip coating technique are described.01-28-2010
20100288359Photovoltaic Device - A method to improve CdTe-based photovoltaic device efficiency is disclosed. The CdTe-based photovoltaic device can include oxygen or silicon in semiconductor layers.11-18-2010
20080314448DYE-SENSITIZED SOLAR CELL FABRICATING KIT, DYE-SENSITIZED SOLAR CELL AND METHOD OF USING THE SAME - A dye-sensitized solar cell fabricating kit for fabricating a dye-sensitized solar cell includes a semiconductor electrode having a semiconductor layer carrying a dye, an opposite electrode disposed opposite the semiconductor electrode, and an electrolyte made by dissolving electrolyte in a solvent and caused to fill between the semiconductor electrode and the opposite electrode during an initial assembly. The electrolyte is supplemented when decreased after assembly, so that a concentration of electrolyte at the time of supplement is lower than a concentration of electrolyte supplied during the initial assembly.12-25-2008
20090025792Silicon-Based Photovoltaic Cell and Its Red Light Conversion Layer - A silicon-based photovoltaic cell is disclosed having a red light conversion layer that absorbs ultraviolet rays, blue-purple or yellow-green light of the Sun's solar radiation and converts the absorption into a red, dark red and near infrared subband radiation. The maximum value of the solar radiation absorbed by the red light conversion layer is μ=470˜490 nm, and the maximum value of the photoluminescent spectrum of the red light conversion layer is within the photosensitive spectral zone of said single-crystal silicon substrate λ=700˜900 nm, i.e., in conformity with the optimual sensitivity area of silicon-based solar cells. The red light conversion layer has filled therein an ethyl acetoacetate or polycarbonate-based light-transmissive polymer that has evenly distributed therein a phosphor composed of α-Al01-29-2009
20100126586PHOTOVOLTAIC DEVICE WITH SPACE-SEPARATED QUANTUM CUTTING - A photovoltaic device is provided comprising an energy conversion material. The energy conversion material comprises nanosized semiconductor quantum structures comprising a first quantum dot and a second quantum dot. The first quantum dot has a first size, and the second quantum dot has a second size. The separation of the first and second quantum dots is of the same order of magnitude as the first or second size or smaller, such that, by irradiating the first quantum dot with a photon for producing one or more excitons in the first quantum dot, one or more further excitons are also produced in the second quantum dot.05-27-2010
20100018578PHOTOACTIVE MATERIALS CONTAINING GROUP IV NANOSTRUCTURES AND OPTOELECTRONIC DEVICES MADE THEREFROM - The present invention provides photoactive materials that include inorganic nanostructures comprising a Group IV semiconductor in combination with electron-transporting, conjugated small molecules, carbon nanostructures, or both. The carbon nanostructures or conjugated small molecules may be selected such that the inorganic nanostructures and the carbon nanostructures (and/or the small molecules) exhibit a type II band offset. The photovoltaic materials are well-suited for use as the active layer in photoactive devices, including photovoltaic devices, photoconductors, and photodetectors.01-28-2010
20120145243SOLAR CELLS WITH MAGNETICALLY ENHANCED UP-CONVERSION - A method of magnetically enhancing up-conversion components includes providing at least one of up-conversion material and sensitizer material (i.e. up-conversion components), generally in conjunction with a semiconductor solar cell, and positioning magnetic apparatus adjacent the up-conversion components to supply a magnetic field to the up-conversion components. The magnetic field has an intensity and direction selected to enhance operation of the up-conversion components.06-14-2012
20090050205METHOD OF OPTIMIZING THE BAND EDGE POSITIONS OF THE CONDUCTION BAND AND THE VALENCE BAND OF A SEMICONDUCTOR MATERIAL FOR USE IN PHOTOACTIVE DEVICES - The present invention relates to a semiconductor compound having the general formula A02-26-2009
20100206380Plasmonic nanocavity devices and methods for enhanced efficiency in organic photovoltaic cells - Plasmonic nanocavity arrays and methods for enhanced efficiency in organic photovoltaic cells are described. Plasmonic nanocavities offer a promising and highly tunable alternative to conventional transparent conductors for photovoltaic applications using both organic and inorganic materials systems.08-19-2010
20100059118METHOD FOR PRODUCING SILICON - Disclosed is a novel method for producing high-purity silicon at low cost. Particularly disclosed is a novel method for producing high-purity silicon, which can be suitably used as a raw material for solar cells, at low cost. Specifically, a method for producing silicon wherein silica is subjected to molten salt electrolysis in an electrolysis vessel comprises, in the following order, a step (1) wherein the silicon content in an silicon-containing alloy, which is in a liquid phase at the electrolysis temperature, is increased by using the alloy as the cathode and performing electrolysis; a step (2) wherein the silicon-containing alloy serving as the cathode is taken out of the electrolysis vessel before it reaches the concentration at which silicon begins to precipitate at the electrolysis temperature; a step (3) wherein silicon is solidified by cooling the taken-out silicon-containing alloy within the temperature range higher than the eutectic point but lower than the electrolysis temperature; and a step (4) wherein the solidified silicon is collected.03-11-2010
20120305081THIN-FILM PHOTOVOLTAIC DEVICE - A high-efficiency triple-junction thin-film photovoltaic device in which the haze ratio is high and the short-circuit current values obtained from each of the photovoltaic layers are equalized. A thin-film photovoltaic device comprises a transparent electrode layer and three silicon-based photovoltaic layers stacked in sequence on a substrate. The transparent electrode layer has at least one opening formed by an etching treatment that exposes the surface of the substrate, and the haze ratio of the transparent electrode layer relative to light of a broad wavelength region is at least 60%.12-06-2012
20090071540COMBINED ETCHING AND DOPING MEDIA - The present invention relates firstly to HF/fluoride-free etching and doping media which are suitable both for the etching of inorganic layers and also for the doping of underlying layers. The present invention secondly also relates to a process in which these media are employed.03-19-2009
20120042952SILICON SOLAR CELL COMPRISING A CARBON NANOTUBE LAYER - A silicon solar cell including a carbon nanotube layer is provided. The carbon nanotube layer is disposed on at least one of front and back surfaces of a p-n junction silicon substrate which includes a p-type silicon layer and an n-type silicon layer. Accordingly, the intensity of the electric field applied to devices may be increased due to introduction of the carbon nanotube layer, resulting in improved photoelectric conversion efficiency.02-23-2012
20120042951TAILORING THE BAND GAP OF SOLAR CELLS MADE OF LIQUID SILANE BY ADDING GERMANIUM - The present invention relates to a method for decreasing or increasing the band gap shift in the production of photovoltaic devices by means of coating a substrate with a formulation containing a silicon compound, e.g., in the production of a solar cell comprising a step in which a substrate is coated with a liquid-silane formulation, the invention being characterized in that the formulation also contains at least one germanium compound. The invention further relates to the method for producing such a photovoltaic device.02-23-2012
20110155245SOLAR MODULE HAVING A SIDE INSULATING MEMBER - Disclosed herein is a solar module, which includes a solar cell unit and an insulating member. The insulating member covers at least one side of the solar cell unit in thickness direction so as to extend the creepage distance along the thickness direction of the solar cell unit and is at least 8.4 mm.06-30-2011
20110155244SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME - Disclosed is a solar cell including; a semiconductor substrate including a p-type layer and an n-type layer, a dielectric layer disposed on a surface of the semiconductor substrate, wherein the dielectric layer includes a plurality of penetrating parts, a first electrode electrically connected to the p-type layer of the semiconductor substrate, and a second electrode electrically connected to the n-type layer of the semiconductor substrate, wherein the first electrode includes; a fusion part which comprises a melt blend of a semiconductor material and a metal material and which is disposed within the plurality of penetrating parts of the dielectric layer, and a metal part which includes a metal material and is disposed on a surface of one side of the dielectric layer.06-30-2011
20120006409Thin Silicon Sheets for Solar Cells - A thin layer of single-crystal silicon is produced by forming first trenches in a silicon substrate having (111) orientation; forming narrower second trenches at the base of the trenches; anisotropically etching lateral channels (01-12-2012
20090139572WEAVABLE FIBER PHOTOVOLTAIC COLLECTORS - Photovoltaic fibers and methods of making photovoltaic fibers are provided. The photovoltaic fiber contains a core, bottom metal-semiconductor compounds over the core, a semiconductor layer comprising semiconductor elements and insulating materials over the bottom metal-semiconductor compounds, and upper metal-semiconductor compounds over the semiconductor layer. The photovoltaic fiber can be weavable. Fabrics including the photovoltaic fibers can be utilized in any suitable application or photovoltaic collector.06-04-2009
20120060925SURFACE PROCESSING METHOD OF SILICON SUBSTRATE FOR SOLAR CELL, AND MANUFACTURING METHOD OF SOLAR CELL - Disclosed is a surface processing method of a crystalline silicon substrate for a solar cell, and a method for manufacturing a solar cell. The surface processing method of a substrate for a solar cell comprises first surface processing step for forming a plurality of first protrusions on surfaces of a substrate by etching the crystalline silicon substrate by using an aqueous solution, second surface processing step for forming a plurality of second protrusions smaller than the first protrusions by adhering etching residues onto an upper surface, a light receiving surface among the surfaces of the substrate, by using first etching gas, and residue removing step for removing etching residues adhered onto the upper surface of the substrate having undergone the second surface processing step.03-15-2012
20120152352PHOTOVOLTAIC DEVICES WITH AN INTERFACIAL GERMANIUM-CONTAINING LAYER AND METHODS FOR FORMING THE SAME - A germanium-containing layer is provided between a p-doped silicon-containing layer and a transparent conductive material layer of a photovoltaic device. The germanium-containing layer can be a p-doped silicon-germanium alloy layer or a germanium layer. The germanium-containing layer has a greater atomic concentration of germanium than the p-doped silicon-containing layer. The presence of the germanium-containing layer has the effect of reducing the series resistance and increasing the shunt resistance of the photovoltaic device, thereby increasing the fill factor and the efficiency of the photovoltaic device. In case a silicon-germanium alloy layer is employed, the closed circuit current density also increases.06-21-2012
20120152354SILICON-BASED SOLAR CELL WITH EUTECTIC COMPOSITION - Growth and characterization of low cost, and high efficiency micro- and nanostructured p-n heterojunction solar cells through eutectic solidification are provided. Eutectic solidification results in self-assembly of lamellar or rod-like domains with length scales from hundreds of nanometers to micrometers that can be used for efficient extraction of minority carriers in metallurgical-grade materials. The material having a eutectic or near-eutectic composition can be used in making a low-cost and efficient inorganic solar cell.06-21-2012
20120152353SOLAR CELL AND METHOD FOR MAKING THE SAME - A solar cell is provided. The solar cell includes a silicon substrate, a back electrode, a doped silicon layer, and an upper electrode. The silicon substrate includes a lower surface, an upper surface opposite to the lower surface, and a plurality of three-dimensional nano-structures located on the upper surface. Each three-dimensional nano-structure has a stepped structure. The back electrode is located on and electrically connected to the lower surface of the silicon substrate. The doped silicon layer is attached to the three-dimensional nano-structures and the upper surface of the silicon substrate between the three-dimensional nano-structures. The upper electrode is located on at least part of the doped silicon layer. A method for making the solar cell is also provided.06-21-2012
20100096013SOLAR CELL INCLUDING BACKSIDE REFLECTION LAYER COMPOSED OF HIGH-K DIELECTRICS - A solar cell includes a backside reflection layer containing a high-k dielectrics. The backside reflection layer includes a reflection film containing HfO04-22-2010
20120118383Autonomous Integrated Circuit - An autonomous integrated circuit (IC) includes a solar cell formed on a bottom substrate of a silicon-on-insulator (SOI) substrate as a handle substrate; an insulating layer of the SOI substrate located on top of the solar cell; and a device layer formed on a top semiconductor layer of the SOI substrate located on top of the insulating layer, wherein a top contact of the device layer is electrically connected to a bottom contact of the solar cell such that the solar cell is enabled to power the device layer.05-17-2012
20090133753Silicon-based thin-film photoeclectric converter and method of manufacturing the same - In order to improve photoelectric conversion properties of a silicon-based thin-film photoelectric converter to which a conductive SiO05-28-2009
20100288361THIN-FILM SOLAR CELL AND PROCESS FOR PRODUCING A THIN-FILM SOLAR CELL - The thin-film solar cell includes at least one Na11-18-2010
20100288360PHOTOELECTRIC CONVERSION ELEMENT AND SOLOR CELL - Disclosed is a photoelectric conversion element comprising a conductive support and provided thereon, a semiconductor layer, a charge transporting layer and an opposed electrode, the semiconductor layer comprising a semiconductor with a dye, wherein the dye is a compound represented by the following formula (1).11-18-2010
20100206381SOLAR CELL AND METHOD OF MANUFACTURING SOLAR CELL - A solar cell which can increase its open-circuit voltage, short-circuit current, and fill factor (F.F.), thereby enhancing its conversion efficiency is provided. The solar cell of the present invention comprises a p-type semiconductor layer and an n-type semiconductor layer, formed on the p-type semiconductor layer, containing a compound expressed by the following chemical formula (1):08-19-2010
20120160325METHOD OF MANUFACTURING SILICON THIN FILM, METHOD OF MANUFACTURING SILICON THIN-FILM PHOTOVOLTAIC CELL, SILICON THIN FILM, AND SILICON THIN-FILM PHOTOVOLTAIC CELL - Disclosed is a method of manufacturing a silicon thin film, a method of manufacturing a silicon thin-film photovoltaic cell, and a silicon thin film. There is provided a method of manufacturing a silicon thin film in a form in which an inert face formed by an exposed face of a silicon substrate and an inert layer is formed by selectively forming the inert layer on the silicon substrate in which growth of a silicon crystal is inactive for a raw material gas of the silicon crystal, and the silicon crystal is grown from the exposed face such that the silicon crystal covers the silicon substrate by supplying a raw material gas, of which a surface decomposition reaction on the silicon substrate is dominant, out of the raw material gas to the silicon substrate. By forming a width of the exposed face in a range of 0.001 μm to 1 μm, the silicon thin film is formed in a state that the silicon thin film can be peeled off from the silicon substrate.06-28-2012
20120247560Thin Silicon Solar Cell And Method Of Manufacture - A method of fabricating a solar cell is disclosed. The method includes the steps of forming a sacrificial layer on a silicon substrate, forming a doped silicon layer atop the sacrificial substrate, forming a silicon film atop the doped silicon layer, forming a plurality of interdigitated contacts on the silicon film, contacting each of the plurality of interdigitated contacts with a metal contact, and removing the sacrificial layer.10-04-2012
20090056807Solar cell and fabricating process thereof - A solar cell includes a semiconductor substrate, an emitter layer, at least one emitter contact region and at least one first electrode. The emitter layer is formed on at least one surface of the semiconductor substrate. A p-n junction is formed between the emitter layer and the semiconductor substrate. The emitter contact region is formed on portions of the emitter layer and has the same type of dopant as the emitter layer. The emitter contact region has a higher dopant concentration than the emitter layer. The first electrode is coupled with the emitter contact region.03-05-2009
20100051104Solar cell and manufacturing method thereof - Disclosed are a solar cell and a manufacturing method thereof. The solar cell in accordance with an embodiment of the present invention includes: a substrate having a plurality of holes formed on one surface thereof; a metal layer formed on an inner wall of the hole and on one surface of the substrate; a p-type semiconductor coated on the metal layer; an n-type semiconductor formed inside the hole and on one surface of the substrate; a transparent conductive oxide formed on the n-type semiconductor; and an electrode terminal formed on the p-type semiconductor and on the transparent conductive oxide.03-04-2010
20100032017SOLAR CELL AND METHOD OF MANUFACTURING THE SAME - In a solar cell and a method of manufacturing the solar cell, when a semiconductor pattern, bottom electrodes and top electrodes are patterned, a first mask pattern having different thicknesses according to location, a second mask pattern formed by etching back the first mask pattern, and a third mask pattern by etching back the second mask pattern are used etch masks. The first mask pattern may be easily manufactured using an imprint method utilizing a mold.02-11-2010
20100024882Process for the Production of Si by Reduction of SiHCl3 with Liquid Zn - The invention relates to the manufacture of high purity silicon as a base material for the production of e.g. crystalline silicon solar cells. SiHCl02-04-2010
20100012190NANOWIRE PHOTOVOLTAIC CELLS AND MANUFACTURE METHOD THEREOF - Provided is a nanowire photovoltaic cell (01-21-2010
20120073658Solar Cell and Method for Fabricating the Same - In a heterojunction solar cell, a semiconductor A is bonded to a different conductivity type semiconductor B having an electron affinity a03-29-2012
20120180867THREE-DIMENSIONAL THIN-FILM SOLAR CELLS - A three-dimensional thin-film solar cell 07-19-2012
20120255612ALD OF METAL OXIDE FILM USING PRECURSOR PAIRS WITH DIFFERENT OXIDANTS - Discloses is a method for depositing a thin metal oxide film on a substrate, comprising: providing a substrate (10-11-2012
20120255613PHOTOVOLTAIC CELL AND METHODS FOR PRODUCING A PHOTOVOLTAIC CELL - A photovoltaic cell (10-11-2012
20100326524ORGANIC SOLAR CELL AND METHOD OF FABRICATING THE SAME - An organic solar cell includes; a cathode, an anode disposed substantially opposite the cathode, a photoactive layer disposed between the cathode and the anode, and an electron blocking layer disposed between the anode and the photoactive layer, wherein the photoactive layer includes; an electron donor, an electron acceptor disposed adjacent to the electron donor, and a nanostructure disposed adjacent to at least one of the electron donor and the electron acceptor, wherein the nanostructure is connected to the anode, and includes a hole transporting material selected from the group consisting of a semiconductor element, a semiconductor compound, a semiconductor carbon material, and a combination thereof, and the semiconductor element, the semiconductor compound, or the semiconductor carbon material satisfies the following Equation 1 and 2:12-30-2010
20120260989THERMAL TREATMENT OF SILICON WAFERS USEFUL FOR PHOTOVOLTAIC APPLICATIONS - Efficiency of silicon photovoltaic solar cells is increased by an annealing process for immobilizing oxygen formed in Czochralski-grown silicon. The annealing process includes a short anneal in a rapid thermal annealing chamber at a high temperature, for example, greater than 1150° C. in an oxygen-containing ambient, More preferably, the wafer is rapidly cooled to less than 950° C. without an intermediate temperature hold, at which temperature oxygen does not nucleate and/or precipitate, Subsequent processing to form a photovoltaic structure is typically performed at relatively low temperatures of less than 1000° C. or even 875° C.10-18-2012
20120260988PASTE COMPOSITION FOR ELECTRODE AND PHOTOVOLTAIC CELL - A paste composition for an electrode, the paste composition comprising: phosphorous-containing copper alloy particles in which the content of phosphorous is from 6% by mass to 8% by mass; glass particles; a solvent; and a resin.10-18-2012
20100229949DYE-SENSITIZED SOLAR CELL - A dye-sensitized solar cell comprising a negative electrode structure 09-16-2010
20100218826METHOD FOR PRODUCING A SILICON SOLAR CELL WITH A BACK-ETCHED EMITTER AS WELL AS A CORRESPONDING SOLAR CELL - A method is presented for producing a silicon solar cell with a back-etched emitter preferably with a selective emitter and a corresponding solar cell. According to one aspect, the method comprises the following method steps: producing a two-dimensionally extending emitter at an emitter surface of a solar cell substrate; applying an etching barrier onto first partial zones of the emitter surface; etching the emitter surface in second partial zones of the emitter surface not covered by the etching barrier; removing the etching barrier; and producing metal contacts at the first partial zones. During the method, especially during the etching of the emitter surface in the second partial zones, a porous silicon layer is advantageously produced, which is then oxidised. This oxidised porous silicon layer can subsequently be etched away together with any phosphorus glass that may be present. The method makes use of conventional screen-printing and etching technologies and is thus compatible with current industrial production plants.09-02-2010
20100218825Dye for dye-sensitized solar cell and Solar cell using it - The present invention relates to a new dye for dye-sensitized solar cell and a solar cell prepared using the said dye, more specifically, to a new compound of dye is esterificated to add carboxylate group to alkyl chain, thereby improving a stability on electrolyte and semiconductor particles09-02-2010
20100132796DYE COMPOUND FOR DYE-SENSITIZED SOLAR CELLS, DYE-SENSITIZED PHOTOELECTRIC CONVERTER AND DYE-SENSITIZED SOLAR CELLS - It relates to a dye compound for solar cells, a dye-sensitized photoelectric converter and dye-sensitized solar cells. The photoelectric conversion efficiency of solar cells is improved by using the dye compound for solar cells, expressed by formula 1:06-03-2010
20080245414METHODS FOR FORMING A PHOTOVOLTAIC DEVICE WITH LOW CONTACT RESISTANCE - An improved PV solar cell structure and methods for manufacturing the same are provided. In one embodiment, a photovoltaic device includes a first photoelectric conversion unit, a first transparent conductive oxide layer and a first microcrystalline silicon layer disposed between and in contact with the photoelectric conversion unit and the transparent conductive oxide layer. In another embodiment, a method of forming a photovoltaic solar cell includes providing a substrate having a first transparent conductive oxide layer disposed thereon, depositing a first microcrystalline silicon layer on the transparent conductive oxide layer, and forming a first photoelectric conversion unit on the microcrystalline silicon layer.10-09-2008
20080236666POLYMERIZABLE DIAZONIUM SALTS, PROCESS FOR THE PREPARATION THEREOF AND USES THEREOF - Polymerizable diazonium salts having redox properties and absorption in the visible range, a process for preparing them and uses thereof are disclosed. The salts have the general formula:10-02-2008
20080236665Method for Rapid Liquid Phase Deposition of Crystalline Si Thin Films on Large Glass Substrates for Solar Cell Applications - A method for liquid phase deposition of crystalline silicon thin films, and a high efficiency solar cell that is fabricated using crystalline silicon thin film technology, has the performance of a crystal silicon solar cell, but at the cost level per unit area of a solar cell fabricated using an amorphous silicon thin film. The crystal thin film uses only 10% or less of the amount of silicon used in a wafer-based solar cell. Because of the maturity of silicon technology in semiconductor industry, this approach not only enables high volume, automated production of solar cells on a very large, low-cost substrate, but also increases the area throughput up to 10000 cm10-02-2008
20090272438Strain Balanced Multiple Quantum Well Subcell In Inverted Metamorphic Multijunction Solar Cell - A method of manufacturing a solar cell by providing a first semiconductor substrate for the epitaxial growth of semiconductor material; forming a first subcell on the substrate with a first semiconductor material with a first band gap and a first lattice constant; forming a second subcell with a second semiconductor material with a second band gap and a second lattice constant, wherein the second band gap is less than the first band gap and the second lattice constant is greater than the first lattice constant; the second subcell including a strain balanced quantum well structure; and forming a lattice constant transition material positioned between the first subcell and the second subcell, the lattice constant transition material having a lattice constant that changes gradually from the first lattice constant to the second lattice constant.11-05-2009
20080216893Process for Manufacturing Photovoltaic Cells - A process for making a photovoltaic cell comprising forming a first layer on a front surface of a semiconductor wafer, the wafer comprising a first dopant and the first layer comprising a dopant of a conductivity type opposite the first dopant; depositing a surface coating on the front surface over the first layer; forming grooves in the front surface after depositing the surface coating thereon; doping the grooves with a dopant having a conductivity opposite the first dopant; treating a back surface of the wafer to remove at least substantially all dopant having a conductivity type opposite the first dopant; forming a back surface field; forming a back electrical contact over the back surface; and adding an electrically conductive material to the grooves to form a front electrical contact.09-11-2008
20130112275SILICON HETEROJUNCTION PHOTOVOLTAIC DEVICE WITH WIDE BAND GAP EMITTER - A photovoltaic device including a single junction solar cell provided by an absorption layer of a type IV semiconductor material having a first conductivity, and an emitter layer of a type III-V semiconductor material having a second conductivity, wherein the type III-V semiconductor material has a thickness that is no greater than 50 nm.05-09-2013
20130112274Technique for fabrication of thin solar cells - A low-cost fabrication technique, readily extensible to volume manufacturing is presented for thin strip solar cells. A wafer structure is disclosed for formation of thin strips. Plurality of strips is formed and mechanically supported by a thin layer of silicon with uneven surface. Processing methods are also disclosed to fabricate solar cells.05-09-2013
20100276003LAYERED FILM AND MANUFACTURING METHOD THEREOF, PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF, AND SOLAR CELL APPARATUS - Using a manufacturing method which includes a process (A) for forming a particle layer of a plurality of one or more types of particles consisting mainly of a metal oxide and/or a metal hydroxide, and a process (B) for forming, using a reaction solution which includes one or more types of metal ions, a metal oxide layer consisting mainly of an oxide of the one or more types of metal ions on the particle layer so as to cover the particle layer without any cracks by a liquid phase method under a pH condition in which at least a portion of the plurality of particles remains without being dissolved by the reaction solution, a layered film having a layered structure of the particle layer and the metal oxide layer is manufactured.11-04-2010
20080202582Process for Producing Monocrystal Thin Film and Monocrystal Thin Film Device - The present invention provides a method for manufacturing a monocrystalline film and a device formed by the above method, and according to the method mentioned above, lift-off of the monocrystalline silicon film is preferably performed and a high-purity monocrystalline silicon film can be obtained. A monocrystalline silicon substrate (template Si substrate) 08-28-2008
20100307590PHOTOELECTRIC CONVERSION DEVICE - The present invention provides a technique in which a cheap zinc oxide material can be used as a light-transmitting conductive film of a photoelectric conversion device. The present invention is a photoelectric conversion device including, between a first electrode and a second electrode, at least one unit cell in which a first impurity semiconductor layer having one conductivity type, a semiconductor layer, and a second impurity semiconductor layer having a conductivity type opposite to the first impurity semiconductor layer are sequentially stacked and a semiconductor junction is included. The first electrode or the second electrode includes conductive oxynitride containing zinc and aluminum. In the conductive oxynitride containing zinc and aluminum: the relative proportion of the zinc is less than or equal to 47 at. % and higher than that of the aluminum; and the relative proportion of the aluminum is higher than that of nitrogen.12-09-2010
20100307589ORGANIC SOLAR CELL AND METHOD OF FABRICATING THE SAME - An organic solar cell includes; a cathode, an anode disposed substantially opposite the cathode, a photoactive layer disposed between the cathode and the anode, wherein the photoactive layer includes an electron donor, an electron acceptor, and a nanostructure, and wherein the nanostructure includes an electron conductive material selected from the group consisting of a semiconductor element, a semiconductor compound, a semiconductor carbon material, a metallic carbon material which is surface-treated with a hole blocking material, a metal which is surface-treated with a hole blocking material and a combination thereof.12-09-2010
20120273043Thin Film Solder Bond - A device, system, and method for solar cell construction and bonding/layer transfer are disclosed herein. An exemplary structure of solar cell construction involves providing a monocrystalline donor layer. A solder bonding layer bonds the donor layer to a carrier substrate. A porous layer may be used to separate the donor layer.11-01-2012
20110232759HIGHLY EFFICIENT DYE-SENSITIZED SOLAR CELLS USING MICROTEXTURED ELECTRON COLLECTING ANODE AND NANOPOROUS AND INTERDIGITATED HOLE COLLECTING CATHODE AND METHOD FOR MAKING SAME - The present invention generally relates to the field of photovoltaic devices. Specifically, the present invention relates to the areas of dye sensitized solar cells (DSSCs).09-29-2011
20110284080Photovoltaic Cell With Silole-Containing Polymer - Photovoltaic cells with silole-containing polymers, as well as related systems, methods and components are disclosed.11-24-2011
20110303291FORMATION OF THIN LAYERS OF SEMICONDUCTOR MATERIALS - There is disclosed a method of forming layers of either GaAs or germanium materials such as SiGe. The germanium material, for example, may be epitaxially grown on a GaAs surface. Layer transfer is used to transfer the germanium material, along with some residual GaAs, to a receiver substrate. The residual GaAs may be then removed by selective etching, with the boundary between the GaAs and the germanium material providing an etch stop.12-15-2011
20110303290METHOD AND APPARATUS FOR MANUFACTURING SILICON SUBSTRATE WITH EXCELLENT SURFACE QUALITY USING INERT GAS BLOWING - The present disclosure provides a method and apparatus for manufacturing a silicon substrate using inert gas blowing during continuous casting to provide excellent productivity and surface quality. The apparatus includes a raw silicon feeder through which raw silicon is fed, a silicon melting unit disposed under the raw silicon feeder and melting the raw silicon to form molten silicon, a molten silicon storage unit storing the molten silicon supplied from the silicon melting unit and tapping the molten silicon to provide a silicon melt having a constant thickness, a transfer unit transferring the silicon melt tapped from the molten silicon storage unit, and a cooling unit cooling the silicon melt transferred by the transfer unit. Here, the cooling unit cools the silicon melt by blowing inert gas at a rate of 0.1˜2.5 Nm12-15-2011
20110303289PROCESS FOR PRODUCING PHOTOVOLTAIC DEVICE AND PHOTOVOLTAIC DEVICE - A process for producing a photovoltaic device that suppresses variations in the photovoltaic conversion efficiency within the plane of a large surface area substrate, suppresses fluctuations in the module power output between production lots, and enables an improvement in the productivity. A process for producing a photovoltaic device that includes forming a silicon-based photovoltaic layer on a substrate using a plasma enhanced CVD method that employs a gas containing a silane-based gas and hydrogen gas as the raw material gas, under conditions in which the flow rate of the hydrogen gas per unit surface area of the substrate is not less than 80 slm/m12-15-2011
20110303288Solar Cell Structure And Composition and Method For Forming The Same - A semiconductor structure including a bonding layer connecting a first semiconductor wafer layer to a second semiconductor wafer layer, the bonding layer including an electrically conductive carbonaceous component and a binder component.12-15-2011
20110308615CRYSTAL SILICON PROCESSES AND PRODUCTS - Crystal silicon processes and products (12-22-2011
20110308614ETCHING COMPOSITION AND ITS USE IN A METHOD OF MAKING A PHOTOVOLTAIC CELL - This invention provides an etching composition comprising one or more onium salts selected from the group consisting of iodonium salts and sulfonium and an organic medium. Also provided is a method of making a photovoltaic cell that uses the etching composition to etch the anti-reflection coating and a photovoltaic cell made by this method.12-22-2011
20120017992ARTICLES COMPRISING PHYLLOSILICATE COMPOSITES CONTAINING MICA - Disclosed is a mica paper composite and a process for making the mica paper composite. Articles comprising the mica paper composite are also disclosed.01-26-2012
20120017991ARTICLES COMPRISING PHYLLOSILICATE COMPOSITES CONTAINING MICA - Disclosed is a mica paper composite and a process for making the mica paper composite. Articles comprising the mica paper composite are also disclosed.01-26-2012
20080289690Process For Producing a Silicon Film on a Substrate Surface By Vapor Deposition - The present invention relates to a process for producing a silicon film on a substrate surface by vapor deposition, starting from a silicon-based precursor, characterized in that the precursor used is silicon tetrachloride. The present invention also relates to thin-film solar cells or crystalline silicon thin-film solar cells obtainable by the process according to the invention. The invention also relates to the use of silicon tetrachloride for producing a film deposited on a substrate from the vapor phase.11-27-2008
20090032104DYE-SENSITIZED SOLAR CELL HAVING IMPROVED ENERGY CONVERSION EFFICIENCY AND METHOD OF FABRICATING THE SAME - Provided are a dye-sensitized solar cell with increased energy conversion efficiency, and a method of fabricating the same. The dye-sensitized solar cell is provided with a semiconductor electrode layer including hollow-shaped semiconductor particles and a dye layer adsorbed on the surface of the semiconductor electrode layer, and the dye layer is adsorbed on the outer and inner surfaces of the semiconductor particles.02-05-2009

Patent applications in class Silicon or germanium containing