Class / Patent application number | Description | Number of patent applications / Date published |
136239000 | Group IV element containing (C, Si, Ti, Ge, Zr, Sn, Hf, Pb) | 31 |
20080210285 | Thermoelectric Conversion Material And Production Method For Thermoelectric Conversion Material - A thermoelectric conversion material having a novel composition is provided. The thermoelectric conversion material comprises a first dielectric material layer, a second dielectric material layer, and an electron localization layer that is present between the first dielectric material layer and the second dielectric material layer and that has a thickness of 1 nm. | 09-04-2008 |
20080216884 | Clathrate Compounds, Thermoelectric Conversion Elements, and Methods For Producing the Same - BaAuGe, BaAuGaGe, BaPtGe, BaPdGe, BaPdGaGe, BaPdGaSi, BaPtGaSi, BaCuGaGe, and BaAgGaGe clathrate compounds, and thermoelectric conversion element comprising the clathrate compounds. Methods for producing thermoelectric conversion elements are also provided, comprising melting, heat-treating, particle-forming, and sintering processes. | 09-11-2008 |
20080236644 | Thermoelectric material and thermoelectric conversion module using the same - A thermoelectric material has a composition expressed by (Fe | 10-02-2008 |
20080257395 | Miniature quantum well thermoelectric device - A miniature quantum well thermoelectric device. The device includes a number of quantum well n-legs and a number of quantum well p-legs. Each of the p-legs are alternately electrically connected in series with each of the n-legs at locations that are thermal communication with a cold side and a hot side. The device can be adapted to function as a cooler and it can be adapted to function as an electric power generator. In a preferred embodiment the p-legs and said n-legs are configured generally radially between the hot side and the cold side. In this preferred embodiments each of the n-legs has at least 600 n-type layers with each n-type layer separated from other n-type layers by an insulating layer and each of the p-legs has at least 600 p-type layers with each p-type layer separated from other p-type layers by an insulating layer. | 10-23-2008 |
20080276979 | SEMICONDUCTOR NANOWIRE THERMOELECTRIC MATERIALS AND DEVICES, AND PROCESSES FOR PRODUCING SAME - The present invention provides nanowires and nanoribbons that are well suited for use in thermoelectric applications. The nanowires and nanoribbons are characterized by a periodic longitudinal modulation, which may be a compositional modulation or a strain-induced modulation. The nanowires are constructed using lithographic techniques from thin semiconductor membranes, or “nanomembranes.” | 11-13-2008 |
20090188542 | Thermoelectric Module - A thermoelectric module | 07-30-2009 |
20090199887 | METHODS OF FORMING THERMOELECTRIC DEVICES INCLUDING EPITAXIAL THERMOELECTRIC ELEMENTS OF DIFFERENT CONDUCTIVITY TYPES ON A SAME SUBSTRATE AND RELATED STRUCTURES - A method of forming a thermoelectric device may include forming a first pattern of epitaxial thermoelectric elements of a first conductivity type on a surface of a semiconductor substrate. A second pattern of epitaxial thermoelectric elements of a second conductivity type may be formed on the surface of the semiconductor substrate. Moreover, the thermoelectric elements of the first and second patterns may be spaced apart, and the first and second conductivity types may be different. Related structures are also discussed. | 08-13-2009 |
20100051080 | THERMOELECTRIC MATERIALS AND CHALCOGENIDE COMPOUNDS - A thermoelectric material is disclosed. The thermoelectric material is represented by the following formula; (A | 03-04-2010 |
20100108116 | Enhanced Dye Sensitized Solar Cells - A first concept is directed to an improved dye-sensitized solar cell (DSSC). In a first embodiment, photo energy conversion efficiency (PCE) is increased by employing a reflective layer disposed underneath the DSSC device to direct light that would otherwise be wasted back into the DSSC device. In a second embodiment, the PCE of a DSSC is increased by adding an additional dye, which exhibits significant absorption in the red and near-IR regions. A novel phthalocyanine derivative has been developed that absorbs well in the red and near IR-regions, readily couples to the titanium oxide semiconductor in the DSSC, and enables the DSSC device to exhibit a high photo-current efficiency. A second concept is directed to novel thermoelectric materials formed from a mechanical alloy of silicon and at least one other periodic element, wherein the mechanical alloy is fused together using spark plasma sintering. | 05-06-2010 |
20100116309 | THERMOELECTRIC MATERIALS - Disclosed herein is a thermoelectric material for intermediate- and low-temperature applications, in which any one or a mixture of two or more selected from among La, Sc and MM is added to a Ag-containing metallic thermoelectric material or semiconductor thermoelectric material. The thermoelectric material has a low thermal diffusivity, a high Seebeck coefficient, a low specific resistivity, a high power factor and a low thermal conductivity, and thus has a high dimensionless figure of merit, thus showing very excellent thermoelectric properties. The thermoelectric material provide thermoelectric sensors having high sensitivity and low noise and, in addition, is widely used as a thermoelectric material for intermediate- and low-temperature applications, because it shows excellent thermoelectric performance in the intermediate- and low-temperature range. | 05-13-2010 |
20100147352 | Thermoelectric material and method of manufacturing the material - The present invention provides a thermoelectric material and a method of manufacturing it. The thermoelectric material contains a half-Heusler compound including a composition represented by: (Ti | 06-17-2010 |
20100170554 | THERMOELECTRIC CONVERSION MODULE - A thermoelectric conversion module is provided. The thermoelectric conversion module includes a plurality of thermoelectric devices and an electrode for electrically connecting the thermoelectric devices in series, wherein the electrode has a hole section opened to the outside of the electrode and metal which is in liquid state within the used temperature range is stored in the hole section. | 07-08-2010 |
20100193003 | THERMOELECTRIC DEVICE AND METHOD OF MANUFACTURING THE SAME - A thermoelectric device and a method of manufacturing the same are provided. The thermoelectric device may include a nanowire having nanoparticles which are disposed on one of an exterior surface of the nanowire and an interior of the nanowire. | 08-05-2010 |
20100193004 | THERMOELECTRIC CONVERSION ELEMENT AND METHOD FOR MANUFACTURING THE SAME - The present invention provides thermoelectric conversion devices and production methods thereof. The thermoelectric conversion device includes: a thermoelectric conversion device main body having a ridge portion and/or a vertex portion at which a ridge and/or a vertex have/has been subjected to a chamfering process; and a film covering a surface of the thermoelectric conversion device main body, including the ridge portion and/or the vertex portion thereof. | 08-05-2010 |
20100229911 | High temperature, high efficiency thermoelectric module - A long life, low cost, high-temperature, high efficiency thermoelectric module. Preferred embodiments include a two-part (a high temperature part and a cold temperature part) egg-crate and segmented N legs and P legs, with the thermoelectric materials in the three segments chosen for their chemical compatibility or their figure of merit in the various temperature ranges between the hot side and the cold side of the module. The legs include metal meshes partially embedded in thermoelectric segments to help maintain electrical contacts notwithstanding substantial temperature variations. In preferred embodiments a two-part molded egg-crate holds in place and provides insulation and electrical connections for the thermoelectric N legs and P legs. The high temperature part of the egg-crate is comprised of a ceramic material capable of operation at temperatures in excess of 500° C. and the cold temperature part is comprised of a thermoplastic material having very low thermal conductivity. | 09-16-2010 |
20100294327 | THERMOELECTRIC DEVICE USING RADIANT HEAT AS HEAT SOURCE AND METHOD OF FABRICATING THE SAME - Provided are a thermoelectric device using radiant heat as a heat source and a method of fabricating the same. In the thermoelectric device, an anti-reflection layer formed on a heat absorption layer causes as much radiant light as possible to be absorbed by the heat absorption layer without being reflected to the outside so that the radiant heat absorption efficiency can be improved. Also, in the thermoelectric device, an insulating layer formed on a heat dissipation layer and a first reflection layer formed on the insulating layer can prevent external radiant heat from being absorbed by the heat dissipation layer, and as much radiant heat transferred to the heat dissipation layer as possible can be dissipated away from the heat dissipation layer by a second reflection layer thermally connected with the heat dissipation layer so that the radiant heat emission efficiency can be improved. | 11-25-2010 |
20100319750 | Thermoelectric material and thermoelectric device - A thermoelectric composite material includes a carbon nanotube structure and an electrically conductive polymer layer. The carbon nanotube structure includes a plurality of carbon nanotubes and spaces. The electrically conductive polymer layer is coated on surfaces of the carbon nanotubes. | 12-23-2010 |
20110000517 | THERMOELECTRIC DEVICE AND METHOD FOR FABRICATING THE SAME - A thermoelectric device is provided. The thermoelectric device includes first and second electrodes, a first leg, a second leg, and a common electrode. The first leg is disposed on the first electrode and includes one or more first semiconductor pattern and one or more first barrier patterns. The second leg is disposed on the second electrode and includes one or more second semiconductor pattern and one or more second barrier patterns. The common electrode is disposed on the first leg and the second leg. Herein, the first barrier pattern has a lower thermal conductivity than the first semiconductor pattern, and the second barrier pattern has a lower thermal conductivity than the second semiconductor pattern. The first/second barrier pattern has a higher electric conductivity than the first/second semiconductor pattern. The first/second barrier pattern forms an ohmic contact with the first/second semiconductor pattern. | 01-06-2011 |
20110005564 | Method and Apparatus Pertaining to Nanoensembles Having Integral Variable Potential Junctions - Carbon-containing sp3-bonded solid refractory nanocrystalline particles that are each sized no larger than about 100 nanometers have a metal of choice disposed thereabout. A variable potential junction is formed between the metallic coatings and the particles that enables carrier entropy to be efficiently transported from the variable potential junction to the coating. | 01-13-2011 |
20110083714 | THERMOELECTRIC GENERATOR - A thermoelectric generator including a membrane maintained by lateral ends and capable of taking a first shape when its temperature reaches a first threshold and a second shape when its temperature reaches a second threshold greater than the first threshold; and mechanism capable of converting the motions and the deformations of the membrane into electricity. | 04-14-2011 |
20110100411 | SEMICONDUCTOR NANOWIRE THERMOELECTRIC MATERIALS AND DEVICES, AND PROCESSES FOR PRODUCING SAME - The present invention provides nanowires and nanoribbons that are well suited for use in thermoelectric applications. The nanowires and nanoribbons are characterized by a periodic compositional longitudinal modulation. The nanowires are constructed using lithographic techniques from thin semiconductor membranes, or “nanomembranes.” | 05-05-2011 |
20110126874 | LAMINATED THIN FILM METAL-SEMICONDUCTOR MULTILAYERS FOR THERMOELECTRICS - A thermoelectric segment and a method for fabricating. The fabricating includes forming structures by depositing thin-film metal-semiconductor multilayers on substrates and depositing metal layers on the multilayers, joining metal bonding layers to form dual structures with combined bonding layers; and removing at least one of the substrates; and using the dual structure to form a thermoelectric segments. The method can include dicing the dual structures before or after removing the substrates. The method can include depositing additional bonding layers and joining dual structures to make thermoelectric segments of different thicknesses. Each multilayer can be about 5-10 μm thick. Each bonding layer can be about 1-2 μm thick. The bonding layers can be made of a material having high thermal and electrical conductivity. The multilayers can be (Hf,Zr,Ti,W)N/(Sc,Y,La,Ga,In,Al)N superlattice layers. Metal nitride layers can be deposited between each of the bonding layers and multilayers. | 06-02-2011 |
20110297203 | FORMATION OF THERMOELECTRIC ELEMENTS BY NET SHAPE SINTERING - Practices are described for preparing fine-grain, stress-tolerant, brittle, doped semiconductor thermoelectric elements better suited to withstand thermal and mechanical loads without cracking or fracture. Preparation entails net shape powder processing of substantially isotropic thermoelectric compounds such as skutterudites under conditions which promote reduction of the largest grain sizes in a grain size distribution. Nearly three-fold improvements in fracture strength over conventionally-processed thermoelectric elements are observed. The net shape powder processing is adapted for the ready incorporation of the net shape thermoelectric elements into a thermoelectric device. | 12-08-2011 |
20120037199 | THERMOELECTRIC MATERIAL AND THERMOELECTRIC ELEMENT - Disclosed is a thermoelectric material which is represented by the following composition formula (1) or (2) and comprises as a major phase an MgAgAs type crystal structure: | 02-16-2012 |
20130167897 | HETEROGENEOUS LAMINATE INCLUDING GRAPHENE, AND THERMOELECTRIC MATERIAL, THERMOELECTRIC MODULE, AND THERMOELECTRIC APPARATUS INCLUDING THE HETEROGENEOUS LAMINATE - A heterogeneous laminate including: graphene; and a thermoelectric inorganic compound disposed on the graphene. | 07-04-2013 |
20140251407 | THERMOELECTRIC CONVERSION MATERIAL AND A THERMOELECTRIC CONVERSION ELEMENT - A thermoelectric conversion material containing an electrically conductive polymer and a thermal excitation assist agent, wherein the thermal excitation assist agent is a compound that does not form a doping level in the electrically conductive polymer, an energy level of LUMO (lowest unoccupied molecular orbital) of the thermal excitation assist agent and an energy level of HOMO (highest occupied molecular orbital) of the electrically conductive polymer satisfy following numerical expression (I): | 09-11-2014 |
20140338717 | THERMOELECTRIC CONVERSION DEVICE AND FABRICATION METHOD THEREOF - A thermoelectric conversion device includes a perovskite film over a substrate and formed with first and second electrodes on the perovskite film, wherein the perovskite film includes a domain having a crystal orientation different from a crystal orientation of a crystal that constitutes the perovskite film. | 11-20-2014 |
20150107641 | THERMOELECTRIC CONVERSION MATERIAL, THERMOELECTRIC CONVERSION MODULE USING THE SAME, AND MANUFACTURING METHOD OF THE SAME - According to an embodiment, a thermoelectric conversion material made of a polycrystalline material represented by a composition formula (1) shown below and having an MgAgAs type crystal structure is provided. An insulating coat is provided on at least one surface of the polycrystalline material. | 04-23-2015 |
20150136195 | THERMOELECTRIC CONVERSION MATERIAL AND THERMOELECTRIC CONVERSION MODULE USING THE SAME - The present invention provides a thermoelectric conversion material that is a material comprising elements less poisonous than Te and has a Seebeck coefficient comparable to BiTe. The present invention is a full-Heusler alloy that is represented by the composition formula Fe | 05-21-2015 |
20160204326 | FABRICATION OF STABLE ELECTRODE/DIFFUSION BARRIER LAYERS FOR THERMOELECTRIC FILLED SKUTTERUDITE DEVICES | 07-14-2016 |
20190148615 | VERTICAL NANOWIRE THERMOELECTRIC DEVICE INCLUDING SILICIDE LAYER AND METHOD OF MANUFACTURING THE SAME | 05-16-2019 |