Class / Patent application number | Description | Number of patent applications / Date published |
134030000 | Including steam, gaseous agent or temperature feature | 81 |
20080289660 | Semiconductor Manufacture Employing Isopropanol Drying - This invention is directed to an improvement in a wet chemical process for producing electronic precursors. In such process a silicon surface is treated with a wet chemical and the wet chemical subsequently removed therefrom by contact with a drying vapor. In this case, the improvement in the process comprises:
| 11-27-2008 |
20080308131 | Method and apparatus for cleaning and driving wafers - The present invention is directed to a method and an apparatus for cleaning and drying wafers. The apparatus includes an injection unit having first and second injection ports configured for injecting different fluids and arranged in a moving direction of the rose or on a line adjacent to the moving direction. The injection unit migrates straightly from the center of a wafer to the edge thereof, and the first and second injection ports are linearly arranged on a moving line of the nozzle. | 12-18-2008 |
20090025755 | Method for treating substrate - Example embodiments relate to a method of treating a substrate after performing a cleaning step with a liquid chemical in a single substrate spin cleaner. A method of treating a substrate according to example embodiments may include forming a film of deionized water on a surface of the substrate during rinsing, and drying the substrate by supplying a drying gas to the water film on the surface of the substrate. When rinsing the substrate, the rotating speed of the substrate may be reduced to about 50 rpm or less to form a film of water on the surface of the substrate. The film of water may shield the surface of the substrate from direct exposure to atmospheric air. The film of water may be maintained on the surface of the substrate when commencing the supply of the drying gas. Consequently, the number of water marks on the dried substrate may be reduced or prevented. | 01-29-2009 |
20090032068 | SINGLE WAFER METHOD AND APPARATUS FOR DRYING SEMICONDUCTOR SUBSTRATES USING AN INERT GAS AIR-KNIFE - In one aspect, a method is provided. The method comprises forming a meniscus at an interface between a substrate and a fluid surface by moving the substrate through the fluid; shortening the meniscus by applying an air knife to the meniscus at the interface between the substrate and the fluid surface; and Marangoni drying the substrate by applying a drying vapor to the shortened meniscus. Numerous other aspects are provided. | 02-05-2009 |
20090084413 | VAPOR DRYER HAVING HYDROPHILIC END EFFECTOR - Embodiments of the present invention generally relate to an apparatus and methods for rinsing and drying substrates. One embodiment provides an end effector comprising a body having a contact tip for contacting an edge area of a substrate, wherein the end effector is configured to support the substrate while the substrate is in a rinsing bath and while the substrate is being dried from the rinsing bath, and the contact tip comprises a hydrophilic material. | 04-02-2009 |
20090095327 | Substrate support unit, and substrate treating apparatus and method using the same - Provided are a substrate support unit and a substrate treating apparatus and method using the same. The substrate support unit includes a first support part and a second support part. The first support part is movable in a first direction. The first support part supports a first portion of a substrate in which a processing fluid is supplied in a direction corresponding to the first direction. The second support part is movable in a second direction. The second support part supports a second portion of the substrate. At least one of the first support part and the second support part supports the substrate while the processing fluid is supplied. | 04-16-2009 |
20090114253 | Method of Substrate Processing, Substrate Processing System, and Storage Medium - The present invention provides a substrate processing system in which a processing liquid is supplied to a substrate W from a processing nozzle | 05-07-2009 |
20090120465 | DISHWASHER WITH A LATENT HEAT ACCUMULATOR - A cleaning appliance is provided for cleaning washware, which cleaning appliance is designed to subject the washware to the action of at least one cleaning fluid in at least one cleaning chamber. The cleaning appliance has a suction-removal apparatus for removing damp air from the cleaning chamber by suction, and at least one heat recovery device. The heat recovery device is designed to draw heat from the damp air and to feed it back to the cleaning appliance by means of a first cooling fluid. The cleaning appliance has a cooling-fluid line with at least one recirculation path and at least one heat accumulator path with at least one latent heat accumulator. The cleaning appliance is designed to conduct the first cooling fluid to the cleaning chamber and/or into a fluid tank via the recirculation path in at least one operating state after said cooling fluid has flowed through the heat recovery device. The cleaning appliance is also designed to feed the first cooling fluid to the latent heat accumulator by means of the heat accumulator path in at least one standby mode. | 05-14-2009 |
20090173364 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD USING THE SAME - A fluid supply pipe is inserted through a motor supporting member, a spin motor, a rotating shaft, and a plate supporting member. A first flange is integrally formed in the vicinity of a curved portion of a straight portion, extending in the vertical direction, of the fluid supply pipe. The first flange is fixed to a motor supporting member. Thus, the fluid supply pipe is fixed to the spin motor through the motor supporting member. The fluid supply pipe has a configuration in which a gas supply pipe made of resin and a plurality of cleaning liquid supply pipes made of resin are accommodated inside a guide pipe made of stainless. Inside the guide pipe, the one gas supply pipe is surrounded by the plurality of cleaning liquid supply pipes. | 07-09-2009 |
20090199875 | Bubble enhanced cleaning method and chemistry - A method of cleaning equipment such as heat exchangers, evaporators, tanks and other industrial equipment using clean-in-place procedures comprising applying a pre-treatment solution prior to the application of an override use solution. A gas generating use solution is present in either the pretreatment or the override use solution. The gas generating use solution is capable of releasing gas on and in a soil, resulting in a soil disruption effect and enhanced cleaning. | 08-13-2009 |
20090241995 | SUBSTRATE CLEANING METHOD AND APPARATUS - In a method of removing a film residue from a wafer in a substrate processing system, a surface of the wafer is exposed to a processing liquid to thereby lift a first portion of the film residue off the surface of the wafer. In addition, a continuous or pulsed stream of pressurized gas is applied against the surface of the wafer to remove a second portion of the film residue from the wafer. The method may include rotating the wafer relative to the stream of pressurized gas. The stream of pressurized gas may be applied subsequent to exposing the surface of the wafer to the processing liquid and any residual processing liquid may be removed with the second portion of film residue by the stream of pressurized gas. Alternatively, the stream of pressurized gas may be applied concurrently with the processing liquid to remove the film residue and processing liquid in a single step. In an embodiment of an apparatus for removing film residue, a liquid dispensing device and a pressurized gas dispensing device cooperate to apply processing liquid and pressurized gas, concurrently or sequentially, to a substrate surface. | 10-01-2009 |
20090241996 | SINGLE WAFER DRYER AND DRYING METHODS - In a first aspect, a module is provided that is adapted to process a wafer. The module includes a processing portion having one or more features such as (1) a rotatable wafer support for rotating an input wafer from a first orientation wherein the wafer is in line with a load port to a second orientation wherein the wafer is in line with an unload port; (2) a catcher adapted to contact and travel passively with a wafer as it is unloaded from the processing portion; (3) an enclosed output portion adapted to create a laminar air flow from one side thereof to the other; (4) an output portion having a plurality of wafer receivers; (5) submerged fluid nozzles; and/or (6) drying gas flow deflectors, etc. Other aspects include methods of wafer processing. | 10-01-2009 |
20090255558 | CLEANING APPARATUS FOR SEMICONDUCTOR WAFER AND CLEANING METHOD FOR SEMICONDUCTOR WAFER - A cleaning apparatus for a semiconductor wafer includes: a gas jet device including a gas nozzle which jets a first gas onto the surface of a semiconductor wafer to thin the thickness of a stagnant layer on the surface of the semiconductor wafer; and a two-fluid jet device including a two-fluid nozzle which jets droplet mist onto a region where thickness of the stagnant layer of the semiconductor wafer is thinned, the droplet mist being mixed two-fluid of a liquid and a second gas. | 10-15-2009 |
20100043837 | METHOD OF CONTROLLING CONTAMINATION OF A SURFACE - A method is described of controlling contamination of a surface exposed to a carbonaceous material and ionising radiation, such as EUV radiation, DUV radiation or electrons. The method comprises cyclically supplying to the surface a first gas comprising an oxidising species, for example NO, for reacting with carbonaceous deposits formed on the surface from the carbonaceous material, followed by a second gas comprising a reducing species, for example CO, for reacting with oxidising species on the surface. | 02-25-2010 |
20100043838 | Method and Apparatus for Cleaning a Mouthguard - A device for cleaning and storing a mouthguard, including two main chambers shaped for receiving and holding a mouthguard. One of the main chambers has a sealable lid for retaining disinfecting liquid and the other main chamber has vents to allow water to drain away, and to allow air flow for drying the mouthguard. | 02-25-2010 |
20100043839 | SUBSTRATE PROCESSING METHOD - The present invention provides a substrate processing apparatus having a drying mechanism for removing water from a surface of a substrate which has been cleaned by a wet cleaning process, and a substrate processing apparatus and a substrate processing method which are capable of efficiently removing an unnecessary thin film deposited on or adhering to a bevel or edge portion of a substrate. The substrate processing apparatus of this invention has a substrate holder for holding a substrate, and a dry gas supply section for turning an atmosphere, to which at least a portion of a surface of the substrate held by the substrate holder is exposed, into a humidity-controlled dry gas atmosphere. | 02-25-2010 |
20100051064 | METHOD OF CLEANING AND AFTER TREATMENT OF OPTICAL SURFACES IN AN IRRADIATION UNIT - The present invention relates to a method of cleaning and after treatment of optical surfaces in an irradiation unit, said irradiation unit comprising a radiation source ( | 03-04-2010 |
20100139708 | METHOD OF REMOVING RESIST AND APPARATUS THEREFOR - A resist removing device | 06-10-2010 |
20100186777 | METHOD OF CLEANING AIR DIFFUSER APPARATUS - A method of cleaning an air diffuser apparatus component in a membrane filtration unit in which the air diffuser apparatus includes an air main pipe connected to at least one aeration blower, liquid supply piping that joins in midstream of the air main pipe, a branch conduit horizontally connected through a gas supply pipe branched from the air main pipe, and a plurality of air diffusion pipes horizontally disposed perpendicular to the branch pipe conduit, each of the plurality of diffusion pipes having a plurality of diffusion holes that open substantially vertically downward, involves setting a gas flow rate in the branch pipe conduit in a range of 1 m/sec or more and 8 m/sec or less, and a liquid supply rate in the branch pipe conduit in a range of 0.03 L/min/mm | 07-29-2010 |
20100206338 | DEVICE AND METHOD FOR REMOVING LIQUID FROM A SURFACE OF A DISC-LIKE ARTICLE - A method for removing liquid from a surface of a disc includes, rotating the disc article about an axis perpendicular to the disc's main surface, supplying liquid from a supply port, moved across the substrate towards the edge of the disc, onto the rotated disc, supplying a first gas flow through a first gas supply port onto the disc article to an area whose centre has a distance to the centre of rotational movement of not more than 20 mm, the area being covered with a liquid layer thereby opening the liquid layer at a discrete area, and supplying a second gas flow through a second gas supply port moved across the substrate towards the edge of the substrate onto the rotated disc wherein the distance of the second gas supply port to the centre is lower than the distance of the liquid supply port to the centre. | 08-19-2010 |
20100218791 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - A drying gas is supplied into a drying chamber in a substantially horizontal direction, an obliquely downward direction descendent from the substantially horizontal direction, or a vertically downward direction under a state where a wafer is immersed in a cleaning liquid in a cleaning tank. The wafer is moved from the cleaning tank into the drying chamber, with the drying gas being supplied into the drying chamber. At this time, the supply of the drying gas into the drying chamber is stopped, under a condition where a part of the wafer is immersed in the cleaning liquid stored in the cleaning tank. After the movement of the wafer into the drying chamber has been finished, a drying gas is supplied into the drying chamber in an obliquely upward direction ascendant from the substantially horizontal direction or a vertically upward direction. | 09-02-2010 |
20100269865 | LIQUID PROCESSING APPARATUS AND LIQUID PROCESSING METHOD - Disclosed is a liquid processing apparatus which can more securely prevent convex portions from collapsing and also can increase the processing efficiency of a substrate. The liquid processing apparatus processes the substrate having a main body part, and a plurality of convex portions provided on the main body part. The liquid processing apparatus includes a supporting part to support the main body part of the substrate, a chemical liquid supply mechanism to supply a chemical liquid to the substrate supported by the supporting part, and a rinsing liquid supply mechanism to supply a rinsing liquid to the substrate to which the chemical liquid has been supplied by the chemical liquid supply mechanism. Also, the liquid processing apparatus includes a hydrophobicizing gas supply mechanism to inject and supply a hydrophobicizing gas to the substrate to which the rinsing liquid has been supplied by the rinsing liquid supply mechanism. | 10-28-2010 |
20100288312 | DEVICE AND PROCESS FOR WET TREATING A PERIPHERAL AREA OF A WAFER-SHAPED ARTICLE - A device for wet treating a peripheral area of a wafer-shaped article includes holding elements for holding and rotating the wafer-shaped article at its edge, a first and a second liquid treatment units for supplying liquid towards the peripheral area. The holding elements include rollers for driving the wafer-shaped article at its edge. The first liquid treatment unit includes a first liquid carrier for providing a first liquid to wet a first section of the peripheral area, a first liquid supply nozzle for supplying liquid to the first liquid carrier, and a first liquid discharging channel for removing liquid from the first liquid carrier. The second liquid treatment unit includes, a second liquid carrier for providing a second liquid to wet a second section of the peripheral area, a second liquid supply nozzle for supplying liquid to the second liquid carrier, a second liquid discharging channel for removing liquid from the second liquid carrier, and a second gas treatment section with a gas supply nozzle for supplying gas towards the peripheral area, which has been treated with the second liquid for removing most of the second liquid from the peripheral area, and with a gas discharge channel for discharging gas and removed liquid. | 11-18-2010 |
20100326477 | PROCESS FOR TREATMENT OF SUBSTRATES WITH WATER VAPOR OR STEAM - A method of treating a substrate comprises, in one aspect, placing a substrate having material on a surface thereof in a treatment chamber; directing a stream of a liquid treatment composition to impinge the substrate surface; and directing a stream of water vapor to impinge the substrate surface and/or to impinge the liquid treatment composition. A preferred aspect of this invention is the removal of materials, and preferably photoresist, from a substrate, wherein the treatment composition is a liquid sulfuric acid composition comprising sulfuric acid and/or its desiccating species and precursors. In another aspect, a liquid sulfuric acid composition comprising sulfuric acid and/or its desiccating species and precursors are dispensed onto a portion of the substrate surface that is less than the entire surface of the substrate in an amount effective to treat the portion of the substrate surface, and the liquid sulfuric acid composition is exposed to water vapor in an amount effective to increase the temperature of the liquid sulfuric acid composition above the temperature of the liquid sulfuric acid composition prior to exposure to the water vapor. The substrate may be enveloped with a water vapor and/or an optionally nitrogen gas environment during the treatment steps. | 12-30-2010 |
20110011425 | SUBSTRATE PROCESSING SYSTEM, SUBSTRATE PROCESSING METHOD, RECORDING MEDIUM AND SOFTWARE - A substrate processing system | 01-20-2011 |
20110023914 | METHOD AND APPARATUS FOR CLEANING PHOTOMASK - Provided is a method and apparatus for cleaning a photomask. The photomask including a first region and a second region surrounding the first region, a pattern to be protected disposed on the first region, and a material to be removed exists on the second region. A cleaning liquid is sprayed from an inside region of the second region toward an outer region of the second region to remove the material, and a gas is blown from the first region toward the second region to protect the pattern. | 02-03-2011 |
20110030736 | PROCESS FOR CLEANING ARTICLES - A method of cleaning at least one article having a surface to be cleaned, the method comprising the steps of inserting the article into a cleaning chamber ( | 02-10-2011 |
20110155180 | WAFER CLEANING APPARATUS AND WAFER CLEANING METHOD USING THE SAME - A wafer cleaning apparatus and a wafer cleaning method using the same are provided. The wafer cleaning method includes removing an oxide layer, which is formed on a wafer, by performing a dry cleaning process using hydrogen fluoride (HF) gas and ammonia (NH | 06-30-2011 |
20110155181 | SUBSTRATE PROCESSING METHOD, STORAGE MEDIUM STORING PROGRAM FOR EXECUTING SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - There is provided a substrate processing method capable of preventing pattern collapse when a rinse solution is removed from a substrate on which a microscopic resist pattern is formed and also capable of reducing cost for processing the substrate by decreasing an amount of usage of a hydrophobicizing agent. The substrate processing method includes a rinse solution supply process (step S | 06-30-2011 |
20110197929 | PROCESS FOR REMOVING CARBONACEOUS DEPOSITS ON SURFACES OF CATALYSTS AND PLANT PARTS - A process for removing carbonaceous deposits on surfaces of catalysts and plant parts by treating the deposits with a superheated stream of steam admixed at least temporarily with an oxygenous gas, which comprises, in each case with monitoring of the CO | 08-18-2011 |
20110232694 | Reactor cleaning apparatus - In a reactor cleaning apparatus | 09-29-2011 |
20110265831 | METHODS AND APPARATUS FOR PROVIDING A GAS MIXTURE TO A PAIR OF PROCESS CHAMBERS - A method and apparatus for supplying a gas mixture to a load lock chamber is described. In one embodiment, the apparatus supplies a gas mixture to a pair of process chambers, comprising a first ozone generator to provide a first gas mixture to a first process chamber, a second ozone generator to provide a second gas mixture to a second process chamber, a first gas source coupled to the first ozone generator via a first mass flow controller and a first gas line, and coupled to the second ozone generator via a second mass flow controller and a second gas line, and a second gas source coupled to the first ozone generator via a third mass flow controller and a third gas line and coupled to the second ozone generator via fourth mass flow controller and a fourth gas line. | 11-03-2011 |
20110315169 | SUBSTRATE PROCESSING METHOD, STORAGE MEDIUM STORING COMPUTER PROGRAM FOR PERFORMING SUBSTRATE PROCESSING METHOD, AND SUBSTRATE PROCESSING APPARATUS - In a substrate processing method according to the present invention, a cleaning liquid nozzle supplies a rinsing liquid to a central portion of a substrate and thereafter moves from a position corresponding to the central portion of the substrate to a position corresponding to a peripheral, edge portion thereof while supplying the rinsing liquid before stopping at the position corresponding to the peripheral edge portion. Next, a drying liquid nozzle moves from the position corresponding to the peripheral edge portion to the position corresponding to the central portion while supplying a drying liquid. Then, the drying liquid nozzle is kept stationary at the position corresponding to the central portion for a predetermined period of time while supplying the drying liquid. | 12-29-2011 |
20120006361 | SUBSTRATE CLEANING METHOD AND SUBSTRATE CLEANING DEVICE - A substrate rotates, and a liquid nozzle of a gas/liquid supply nozzle moves to a position above the center of the rotating substrate. In this state, a rinse liquid is discharged from the liquid nozzle onto the rotating substrate. The gas/liquid supply nozzle moves toward a position outside the substrate. A gas nozzle reaches the position above the center of the rotating substrate, so that the gas/liquid supply nozzle temporarily stops. With the gas/liquid supply nozzle stopping, an inert gas is discharged onto the center of the rotating substrate for a given period of time. After that, the gas/liquid supply nozzle again moves toward the position outside the substrate. | 01-12-2012 |
20120080059 | ETCHING, CLEANING AND DRYING METHODS USING SUPERCRITICAL FLUID AND CHAMBER SYSTEMS USING THESE METHODS - Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided. | 04-05-2012 |
20120090647 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - A rinsing liquid (DIW) is discharged from a rinsing liquid discharge port formed in a blocking member to perform rinsing processing to a substrate surface while a nitrogen gas is supplied into a clearance space, and a liquid mixture (IPA+DIW) is discharged from a liquid mixture discharge port formed in the blocking member to replace the rinsing liquid adhering to the substrate surface with the liquid mixture while the nitrogen gas is supplied into the clearance space. Thus, an increase of the dissolved oxygen concentration of the liquid mixture can be suppressed upon replacing the rinsing liquid adhering to the substrate surface with the liquid mixture, which makes it possible to securely prevent from forming an oxide film or generating watermarks on the substrate surface. | 04-19-2012 |
20120111373 | SUBSTRATE CLEANING METHOD, SUBSTRATE CLEANING APPARATUS AND STORAGE MEDIUM FOR SUBSTRATE CLEANING - A method for cleaning a surface of a substrate having a circuit pattern formed thereon, includes: forming a liquid film on the surface by feeding a cleaning solution onto the center of the surface while rotating the substrate with the substrate kept horizontal; forming a dry region by discharging gas to the center while moving a position of feed of the cleaning solution on the surface by a distance from the center toward the periphery of the substrate with the substrate being rotated; moving the position of feed of the cleaning solution on the surface toward the periphery at a speed equal to a speed at which the dry region is expanded toward the periphery while rotating the substrate; and controlling temperature of the cleaning solution to form the liquid film such that the temperature becomes higher than process atmosphere temperature on the surface during feed of the cleaning solution. | 05-10-2012 |
20120118332 | SUPERCRITICAL DRYING METHOD FOR SEMICONDUCTOR SUBSTRATE - In one embodiment, after rinsing a semiconductor substrate having a fine pattern formed thereon with pure water, the pure water staying on the semiconductor substrate is substituted with a water soluble organic solvent, and then, the semiconductor substrate is introduced into a chamber in a state wet with the water soluble organic solvent. Then, the water soluble organic solvent is turned into a supercritical state by increasing a temperature inside of the chamber. Thereafter, the inside of the chamber is reduced in pressure while keeping the inside of the chamber at a temperature enough not to liquefy the pure water (i.e., rinsing pure water mixed into the water soluble organic solvent), and further, the water soluble organic solvent in the supercritical state is changed into a gaseous state, to be discharged from the chamber, so that the semiconductor substrate is dried. | 05-17-2012 |
20120138103 | PROCESS FOR CLEANING HARD SURFACES - The present invention is in the field of household cleaning tools. The invention further relates to the use of an air-water jet for the cleaning of hardsurfaces. It is an object of the present invention to provide easier cleaning of hard surfaces. It is therefore an object of the present invention to provide a process of easier cleaning of hard surfaces, especially by means of a device that uses a relatively low water flow rate. Surprisingly it has been found that an external mix air-water jet device may be used for cleaning hard surfaces. | 06-07-2012 |
20120180821 | Bicycle Chain Cleaner and Lubrication Apparatus - A bicycle sprocket chain cleaning and lubrication apparatus allows a sprocket chain ( | 07-19-2012 |
20120186607 | LIQUID TREATMENT APPARATUS AND METHOD - A liquid treatment method including: retaining a substrate with a treatment target surface being set as a lower surface, and rotating the substrate; supplying DIW (deionized water) to the lower surface of the substrate, thereby performing a rinsing process to the substrate; and thereafter supplying a mist containing IPA (isopropyl alcohol) and N | 07-26-2012 |
20120260952 | LIQUID PROCESSING METHOD AND LIQUID PROCESSING APPARATUS - A surface of a substrate can be dried cleanly after liquid-processed by a liquid processing method and a liquid processing apparatus. The liquid processing method includes forming a liquid film of a rinse solution on an entire surface of a substrate having thereon a hydrophobic region by supplying, onto a central portion of the surface of the substrate, the rinse solution for rinsing a chemical liquid supplied on the substrate at a first flow rate while rotating the substrate at a first rotation speed; forming a stripe-shaped flow of the rinse solution on the surface of the substrate by breaking the liquid film formed on the entire surface of the substrate; and moving a discharge unit configured to supply the rinse solution toward a periphery of the substrate until the stripe-shaped flow of the rinse solution is moved outside the surface of the substrate. | 10-18-2012 |
20120298147 | LIQUID PROCESSING APPARATUS AND LIQUID PROCESSING METHOD - Provided are a liquid processing apparatus and a liquid processing method that can optimize the state of air flow at an upper side of a substrate according to each liquid process performed during a substrate liquid processing. A liquid processing apparatus for performing a substrate liquid processing includes a support member configured to horizontally supporting the substrate; a gap forming member configured to form an annular gap between the gap forming member and an outer circumferential part of the support member; an upper liquid supplying member configured to supply a processing liquid to the substrate from an upper side; a cup configured to surround the annular gap and receive the processing liquid swept away from the rotating substrate through the annular gap; and an elevating mechanism configured to elevate the gap forming member. | 11-29-2012 |
20120312333 | Substrate Treating Apparatus And Substrate Treating Method - A substrate processing apparatus and a substrate processing method are capable of restraining or preventing the generation of streaky particles on a substrate surface by excellent removal of a rinsing liquid therefrom. The substrate processing apparatus has a substrate inclining mechanism for inclining a substrate held by a substrate holding mechanism. After a rinsing liquid has been supplied onto a substrate to form a liquid mass, the substrate is inclined at a small angle by the substrate inclining mechanism. Then, the liquid mass is downwardly moved without being fragmented and then falls down without leaving minute droplets on the substrate top. Thereafter, the substrate is returned to a horizontal posture and then dried. | 12-13-2012 |
20120312334 | RESIST REMOVAL APPARATUS AND RESIST REMOVAL METHOD - A resist removal apparatus and method are effective in removing a resist without oxidizing the substrate material other than the resist. The resist removal apparatus, which removes resist from a wafer on which a resist film has been formed, includes a cluster spraying unit which sprays a wafer with clusters each of which is formed of a plurality of organic solvent molecules agglomerated together. | 12-13-2012 |
20130019905 | SUPERCRITICAL DRYING METHOD FOR SEMICONDUCTOR SUBSTRATE AND SUPERCRITICAL DRYING APPARATUS - According to one embodiment, a supercritical drying method for a semiconductor substrate, comprises introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide by impregnating the semiconductor substrate to the supercritical fluid in the chamber, and discharging the supercritical fluid and the alcohol from the chamber and reducing a pressure inside the chamber. The method further comprises performing a baking treatment by supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber. | 01-24-2013 |
20130025634 | CLEANING AND SANITIZING APPARATUS AND METHOD - In the exemplary embodiment, a steam-cleaning apparatus is described for sanitizing and cleaning a surface or object. The apparatus has a first reservoir for receiving water, a heater for heating the water within the first reservoir, a second reservoir for receiving a sanitizing agent, a mixing nozzle, a first actuator for enabling the heated water from the first reservoir through the mixing nozzle at the surface or object for cleaning the surface or object; and a second actuator for enabling the sanitizing agent from the second reservoir to the mixing nozzle for mixing the sanitizing agent with the heated water therein, and for enabling the mixed heated water and sanitizing agent at the surface or object for sanitizing the surface or object deeply into its finest fissures and pores. | 01-31-2013 |
20130087174 | METHODS FOR IN-SITU CHAMBER CLEAN UTILIZED IN AN ETCHING PROCESSING CHAMBER - Embodiments of the invention include methods for in-situ chamber dry cleaning a plasma processing chamber utilized for gate structure fabrication process in semiconductor devices. In one embodiment, a method for in-situ chamber dry clean includes supplying a first cleaning gas including at least a boron containing gas into a processing chamber in absence of a substrate disposed therein, supplying a second cleaning gas including at least a halogen containing gas into the processing chamber in absence of the substrate, and supplying a third cleaning gas including at least an oxygen containing gas into the processing chamber in absence of the substrate. | 04-11-2013 |
20130104940 | LIQUID PROCESSING APPARATUS, LIQUID PROCESSING METHOD, AND STORAGE MEDIUM | 05-02-2013 |
20130133701 | METHOD AND APPARATUS FOR DISPENSING AN INERT GAS - Methods for cleaning a substrate are provided. One such method includes receiving the substrate into a cleaning module and flowing an inert gas into the cleaning module. The flowing of the inert gas includes flowing the inert gas into an inlet defined within a top surface of the cleaning module and modifying a direction of the flowing inert gas to flow radially along the top surface of the cleaning module. Concurrent with or after initiating the flowing of the inert gas, a cleaning chemistry is introduced onto a surface of the substrate. The cleaning chemistry is at a temperature elevated from an ambient temperature. The dispensing of the cleaning chemistry is terminated and the flowing of the inert gas is terminated either concurrent with or after termination of the dispensing of the cleaning chemistry. The substrate is dried after the termination of the flowing of the inert gas. | 05-30-2013 |
20130133702 | Mobile Spray Apparatus - Spray apparatus including an air heater and mixer for mixing a liquid, typically a disinfectant or a cleaning agent, into the air stream created by the air heater. The spray apparatus can be provided on a carrier back frame or on a cart. A valve allows to regulate the amount of liquid dispersed into the air stream | 05-30-2013 |
20130139855 | METHOD FOR COMPLETING A CHEMICAL POWER PLANT CLEANING - A method is provided for cleaning at least a part of a water-steam circuit of a power plant. The method includes introducing a cleaning solution into the part requiring to be cleaned and subsequently draining off the cleaning solution. While the cleaning solution is being drained off or immediately thereafter, steam for flushing is injected via a steam injection device into the part requiring to be cleaned at at least one high point of the part requiring to be cleaned and low-point drains are opened or remain open in the part requiring to be cleaned and steam continues to be injected until steam emerges from the low-point drains and those low-point drains from which steam emerges are closed, and steam continues to be injected until steam has emerged from all low-point drains, upon which the steam injection device is closed and all low-point drains are reopened. | 06-06-2013 |
20130167880 | Methods and systems for cleaning for cyclic nucleation transport (CNX) - A hyperbaric cyclic nucleation transport (H-CNX) process is disclosed, including pressure cycling liquid and/or vapor from pressure higher than atmospheric pressure or vapor across the boiling point of the liquid. The higher pressure can be accompanied by higher temperature, which provides additional benefits of more efficient cleaning and cheaper liquid medium. | 07-04-2013 |
20130199578 | Substrate Treating Apparatus And Substrate Treating Method - A substrate processing apparatus and a substrate processing method are capable of restraining or preventing the generation of streaky particles on a substrate surface by excellent removal of a rinsing liquid therefrom. The substrate processing apparatus has a substrate inclining mechanism for inclining a substrate held by a substrate holding mechanism. After a rinsing liquid has been supplied onto a substrate to form a liquid mass, the substrate is inclined at a small angle by the substrate inclining mechanism. Then, the liquid mass is downwardly moved without being fragmented and then falls down without leaving minute droplets on the substrate top. Thereafter, the substrate is returned to a horizontal posture and then dried. | 08-08-2013 |
20130233355 | WASHING APPARATUS AND METHOD WITH SPIRAL AIR FLOW FOR DRYING - An apparatus and method for washing and drying objects includes a rotating washing fluid sprayer having several nozzles to direct washing fluid, e.g., water, at an object being washed in a chamber. A drying fluid is directed at the object in the chamber to dry the object. The drying fluid, e.g., air, is directed in a spiral pattern against the object to urge washing liquid away from the object to dry the object and to push the drying liquid away from edges of the object. The air may be directed at the object simultaneously with the water to increase the energy with which the water impinges on the object and to urge dirt from the object being washed. | 09-12-2013 |
20130291901 | Hyperbaric Methods and Systems for Surface Treatment, Cleaning, and Drying - Objects with complex surface profiles can be cleaned effectively using hyperbaric pressure. After partially submerging an object in a superheated liquid, the pressure of the vapor portion of the superheated liquid can be cycled. For example, a valve connected to the vapor portion of the superheated liquid can be opened to an ambient, such as atmospheric ambient to release the chamber pressure. The chamber pressure then can increased, for example, by re-equilibrium or by introducing superheated vapor or heated vapor or gas. During the release of pressure, bubbles can formed on the surface of the object. During the increase of the pressure, the bubbles can be collapsed. The cycling of the bubbles can clean the object surface. | 11-07-2013 |
20130291902 | Hyperbaric Methods and Systems for Surface Treatment, Cleaning, and Drying - Objects can be dried by a quick release of superheated vapor. After providing a superheated vapor to a chamber, the superheated vapor can be released. During the release of pressure, liquid droplets can be evaporated, drying the object. | 11-07-2013 |
20130319472 | METHOD AND APPARATUS FOR PROCESSING WAFER-SHAPED ARTICLES - A device and method for treating the surface of a semiconductor wafer provides a treatment fluid in the form of a dispersion of gas bubbles in a treatment liquid generated at acoustic pressures less than those required to induce cavitation in the treatment liquid. A resonator supplies ultrasonic or megasonic energy to the treatment fluid and is configured to create an interference pattern in the treatment fluid comprising regions of pressure amplitude minima and maxima at an interface of the treatment fluid and the semiconductor wafer. The resonator is mounted in the space between the rotary chuck body and a wafer carried in rotation with the chuck body; however, the resonator itself is stationary in relation to rotation of the wafer and chuck body. | 12-05-2013 |
20130319473 | SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD FOR CLEANING SAME - An LPCVD apparatus is provided with a processing chamber and a reaction cooling apparatus. The reaction cooling apparatus is placed outside the processing chamber and is configured to generate hydrogen fluoride gas by reaction of hydrogen gas and fluorine gas and to cool the hydrogen fluoride gas. The hydrogen fluoride gas cooled by the reaction cooling apparatus is supplied into the processing chamber as a cleaning gas. | 12-05-2013 |
20140026926 | METHOD AND APPARATUS FOR LIQUID TREATMENT OF WAFER-SHAPED ARTICLES - An apparatus and method for treating a wafer-shaped article utilizes a gas supply hood that can be positioned in a working position above a holder so as to cover all or substantially all of a wafer shaped article when positioned on the holder. The gas supply hood accommodates a fluid dispenser for dispensing at least one fluid onto an upper surface of the wafer shaped article positioned on the holder. The gas supply hood permits the fluid dispenser to be moved laterally of the holder and the gas supply hood while the gas supply hood is in the working position and without moving the gas supply hood. | 01-30-2014 |
20140174482 | SUPERCRITICAL DRYING METHOD FOR SEMICONDUCTOR SUBSTRATE - In one embodiment, after rinsing a semiconductor substrate having a fine pattern formed thereon with pure water, the pure water staying on the semiconductor substrate is substituted with a water soluble organic solvent, and then, the semiconductor substrate is introduced into a chamber in a state wet with the water soluble organic solvent. Then, the water soluble organic solvent is turned into a supercritical state by increasing a temperature inside of the chamber. Thereafter, the inside of the chamber is reduced in pressure while keeping the inside of the chamber at a temperature enough not to liquefy the pure water (i.e., rinsing pure water mixed into the water soluble organic solvent), and further, the water soluble organic solvent in the supercritical state is changed into a gaseous state, to be discharged from the chamber, so that the semiconductor substrate is dried. | 06-26-2014 |
20140174483 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - A rinsing liquid (DIW) is discharged from a rinsing liquid discharge port formed in a blocking member to perform rinsing processing to a substrate surface while a nitrogen gas is supplied into a clearance space, and a liquid mixture (IPA+DIW) is discharged from a liquid mixture discharge port formed in the blocking member to replace the rinsing liquid adhering to the substrate surface with the liquid mixture while the nitrogen gas is supplied into the clearance space. Thus, an increase of the dissolved oxygen concentration of the liquid mixture can be suppressed upon replacing the rinsing liquid adhering to the substrate surface with the liquid mixture, which makes it possible to securely prevent from forming an oxide film or generating watermarks on the substrate surface. | 06-26-2014 |
20140251386 | PROCESSING APPARATUS AND PROCESSING METHOD - According to one embodiment, a processing apparatus includes a rinsing section configured to rinse a processing liquid on a surface of a workpiece with a rinse liquid and a drying section configured to dry the surface of the workpiece. The drying section includes a chamber, a nozzle provided inside the chamber and configured to jet a gas toward the surface of the workpiece, an air flow control unit provided between the rinsing section and a space inside the chamber provided with the nozzle, and a plurality of transport rollers arranged along a transport direction of the workpiece. The air flow control unit includes a first opening provided on a side of receiving the workpiece and a second opening provided on a side of releasing the workpiece. Opening area of the second opening is smaller than opening area of the first opening. | 09-11-2014 |
20140261568 | System and Method for Cleaning Optical Surfaces of an Extreme Ultraviolet Optical System - The present invention provides a local clean microenvironment near optical surfaces of an extreme ultraviolet (EUV) optical assembly maintained in a vacuum process chamber and configured for EUV lithography, metrology, or inspection. The system includes one or more EUV optical assemblies including at least one optical element with an optical surface, a supply of cleaning gas stored remotely from the one or more optical assemblies and a gas delivery unit comprising: a plenum chamber, one or more gas delivery lines connecting the supply of gas to the plenum chamber, one or more delivery nozzles configured to direct cleaning gas from the plenum chamber to a portion of the EUV assembly, and one or more collection nozzles for removing gas from the EUV optical assembly and the vacuum process chamber. | 09-18-2014 |
20140261569 | METHOD AND APPARATUS FOR SUBSTRATE RINSING AND DRYING - A method and apparatus are disclosed for optimizing a rinsing and drying process in semiconductor manufacturing. The optimization seeks to maximize processing throughput while maintaining low defect counts and high device yields, and utilizes simulation and experimental data to set the optimal process parameters for the rinsing and drying process. Improved methods of rinse liquid and purge gas nozzle movement are also disclosed. | 09-18-2014 |
20140290702 | METHOD FOR CLEANING COMPONENTS OF NITRIDE SEMICONDUCTOR MANUFACTURING APPARATUS AND DEVICE FOR CLEANING COMPONENTS OF NITRIDE SEMICONDUCTOR MANUFACTURING APPARATUS - A method for cleaning a component of a nitride semiconductor manufacturing apparatus to which has adhered deposits containing nitride semiconductor comprises a step for chemically treating the component of the nitride semiconductor manufacturing apparatus with a cleaning gas containing a chlorine-based gas, and a step for removing the deposits from the component of the nitride semiconductor manufacturing apparatus by spraying with a sublimable solid substance. | 10-02-2014 |
20140299161 | SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY STORAGE MEDIUM - There is provided a substrate processing method including: supplying a developing liquid to a surface of an exposed substrate to form a resist pattern; supplying a cleaning liquid to the surface of the substrate to remove a residue generated in the developing step from the substrate; supplying a replacing liquid to the surface of the substrate to replace the cleaning liquid existing on the substrate with the replacing liquid, the replacing liquid having a surface tension of 50 mN/m or less and containing a percolation inhibitor for restraining the replacing liquid from percolating into a resist wall portion constituting the resist pattern; and forming a dry region by supplying a gas to a central portion of the substrate while rotating the substrate so as to dry the surface of the substrate by expanding the dry region to a peripheral edge portion of the substrate with a centrifugal force. | 10-09-2014 |
20140299162 | Hyperbaric Methods and Systems for Surface Treatment, Cleaning, and Drying: Thin Liquid H-CNX - Objects with complex surface profiles can be cleaned effectively using hyperbaric pressures. A high temperature high pressure liquid or vapor can be introduced to a sealed chamber containing an object to be cleaned, forming a thin liquid layer on the object. The pressure in the sealed chamber can be quickly reduced, evaporating the thin liquid layer, which can remove surface contaminants from the object. The process can be repeated until the object is cleaned. | 10-09-2014 |
20140311531 | GAS-LIQUID TWO-PHASE ATOMIZING CLEANING DEVICE AND CLEANING METHOD - The present invention provides a gas-liquid two-phase atomizing cleaning device. The cleaning device comprises a gas-liquid two-phase atomizing spray head. The spray head is a double jacket structure and comprises a nozzle, a rotating arm, a gas guide tube and a liquid guide tube; wherein the nozzle is connected with the rotating arm, the gas guide tube and the liquid guide tube are fixed to the rotating arm, the gas guide tube and the liquid guide tube are both provided with pneumatic valves. | 10-23-2014 |
20140338706 | LIQUID PROCESSING METHOD, LIQUID PROCESSING DEVICE, AND STORAGE MEDIUM - [Problem] To provide a liquid processing method with which, while alleviating a watermark occurring in the surface of a substrate, it is possible to hydrophobize the surface using a hydrophobing gas. [Solution] A substrate (W), retained in substrate retaining parts ( | 11-20-2014 |
20140352737 | SUBSTRATE CLEANING APPARATUS, SUBSTRATE CLEANING METHOD AND NON-TRANSITORY STORAGE MEDIUM - A cleaning liquid and a gas are discharged in sequence to a central portion of a substrate while the substrate is being rotated, and after nozzles that discharge them are moved to a peripheral edge side of the substrate, discharge of the cleaning liquid is switched to a second cleaning liquid nozzle set at a position deviated from a movement locus of the first cleaning liquid nozzle. Both of the nozzles are moved toward the peripheral edge side of the substrate while discharging the cleaning liquid and discharging the gas so that a difference between a distance from the discharge position of the second cleaning liquid nozzle to the central portion of the substrate and a distance from the discharge position of the gas nozzle to the central portion of the substrate gradually decreases. | 12-04-2014 |
20150020852 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - A substrate processing apparatus comprises: an air flow generator which generates a down flow by gas flowing from top to bottom around a substrate W held horizontally; a liquid film former which forms a liquid film by supplying a liquid on an upper surface of the substrate; a cooling gas discharge nozzle which discharges cooling gas of a temperature lower than a freezing point of the liquid to the liquid film and thereby freezes the liquid film; and a remover which removes a frozen film formed by freezing the liquid film from the substrate. The air flow generator reduces a flow velocity of the down flow when the cooling gas is discharged to the liquid film from the cooling gas discharge nozzle than when the liquid is supplied to the substrate from the liquid film former. | 01-22-2015 |
20150068558 | METHOD AND A SYSTEM FOR CLEANING PRINTING PARTS - A system and a method for cleaning a printing cylinder or other printing equipment such as printing plates, ink pans or floors of printing units, the method comprising applying a detergent to the surface to be cleaned, after a period to allow action of the detergent, removing the detergent by rinsing, using a vapor and high velocity air stream, i.e. atomized water fog; or steam; or a combination of steam and air, which allows dislodging particles encrusted within cells of the surface of the piece of equipment to be cleaned. | 03-12-2015 |
20150318193 | SUBSTRATE LIQUID TREATMENT APPARATUS AND SUBSTRATE LIQUID TREATMENT METHOD - A substrate liquid treatment apparatus comprises a chuck ( | 11-05-2015 |
20150325458 | METHOD AND SYSTEM TO IMPROVE DRYING OF FLEXIBLE NANO-STRUCTURES - Disclosed herein are methods and systems for processing of nano-structures. In particular, disclosed herein are methods for processing nano-structures during semiconductor manufacturing, including nano-structures of drying high-aspect ratios. Also disclosed are systems for implementing the methods disclosed herein. | 11-12-2015 |
20150343999 | SYSTEM AND METHOD FOR CLEANING A VEHICLE-MOUNTED OPTIC LENS - The present invention refers a system and a method for automatically cleaning an optic lens mounted on a vehicle, by spraying a washing liquid to remove any type of dirt from the lens such as a clear image or optic signal can be captured anytime, where an air pump is provided including a variable volume compression chamber to pressurize a volume of air, and a washing liquid conduit is communicated with a liquid nozzle and with the air pump, such as the air pump can be operated by the flow of pressurized washing liquid, such as the same flow of pressurized washing liquid is used to clean the optic surface, and to operate the air pump and generate a blast of air to blow off any liquid drop from the optic lens. | 12-03-2015 |
20160096203 | LIQUID PROCESSING METHOD, MEMORY MEDIUM AND LIQUID PROCESSING APPARATUS - A liquid processing method for liquid-processing a substrate includes setting a substrate on a substrate holding device which rotates the substrate such that the substrate is held in horizontal position, supplying processing liquid to center portion of the substrate such that the center portion positioned center side with respect to peripheral portion of the substrate is liquid-processed, positioning a discharge port of a processing liquid nozzle toward downstream side in rotation direction such that the liquid is discharged to the peripheral portion obliquely to surface of the substrate and along tangential direction of the substrate while the substrate is rotated, and discharging gas from a gas nozzle perpendicularly to the surface of the substrate toward position that is adjacent to liquid landing position of the liquid on the surface of the substrate and is on the center side of the substrate, while the liquid is discharged to the peripheral portion. | 04-07-2016 |
20160121372 | CLEANING PROCESS AND CLEANING DEVICE FOR ONE OR MORE PARTS OF AN APPLICATION SYSTEM - A cleaning process for one or more parts of an application system by positioning one or more parts of the application system in a clewing chamber, spraying the one or more parts of the application system with a medium using a plurality of spray devices, with the medium being supplied to the spray devices from an assembly group. One or more parts of the application system may be removed from the cleaning chamber, wherein during spraying the supply of media to the spray devices takes place in a sequence having a plurality of successive phases. At least two phases of the sequence differ in terms of the supply of the at least one medium to the spray devices. A cleaning device designed to carry out the cleaning process is also provided having a control device for controlling the supply of the medium to the spray devices. | 05-05-2016 |
20160157693 | STEAM DEVICE AND METHOD FOR OPERATING A STEAM DEVICE - A steam device is provided, including a clean water supplying arrangement, a steam generator which is fluidically connected to the clean water supplying arrangement, a cleaning agent supplying arrangement, a mixing arrangement for clean water and cleaning agent that is fluidically connected to the clean water supplying arrangement and the cleaning agent supplying arrangement, a discharge arrangement for fluid and a control arrangement by which operating modes of the steam device are settable, wherein, by means of the discharge arrangement, steam is dischargeable in a steam mode and a mixture of clean water and cleaning agent is dischargeable in a cleaning agent mode, and wherein the control arrangement has a rinsing unit which, once the cleaning agent mode is at an end, operates a rinsing mode in which the discharge arrangement is rinsed with clean water. | 06-09-2016 |
20160181086 | SYSTEMS AND METHODS FOR RINSING AND DRYING SUBSTRATES | 06-23-2016 |
20170236728 | SUBSTRATE PROCESSING APPARATUS AND GAP WASHING METHOD | 08-17-2017 |