Inventors list

Assignees list

Classification tree browser

Top 100 Inventors

Top 100 Assignees


Work support

Subclass of:

118 - Coating apparatus

118715000 - GAS OR VAPOR DEPOSITION

Patent class list (only not empty are listed)

Deeper subclasses:

Class / Patent application numberDescriptionNumber of patent applications / Date published
118729000 Moving work support 62
Entries
DocumentTitleDate
20100043712SUBSTRATE PROCESSING APPARATUS - A processing apparatus for processing a substrate G includes a processing chamber for processing the substrate; a depressurizing mechanism reducing an internal pressure of the processing chamber; and a transfer mechanism disposed in the processing chamber to transfer the substrate, wherein the transfer mechanism includes: a guide member; a stage for holding the substrate; a driving member for moving the stage; and a movable member supporting the stage and moving along the guide member. The guide member and the movable member are maintained so as not to contact each other by a repulsive force of magnets.02-25-2010
20090159007SUBSTRATE SUPPORT - A substrate support according to the present invention includes a ceramic base 06-25-2009
20100000470WAFER-POSITIONING MECHANISM - A wafer-positioning mechanism includes a susceptor having an upper surface for supporting a wafer thereon, which is slanted with respect to a horizontal plane at an angle such that the wafer on the upper surface slides with an aid and does not slide without the aid. The aid is a gas flowing out of the upper surface against the reverse side of the wafer facing the upper surface. The upper surface has a protrusion for stopping the wafer from sliding beyond the protrusion in the sliding direction by contacting an edge of the wafer where the wafer is positioned on the upper surface for wafer processing.01-07-2010
20130055954INTEGRATED SEMICONDUCTOR-PROCESSING APPARATUS - The present invention relates to an integrated semiconductor-processing apparatus including: an integrated semiconductor-processing body which has a first space for storing a plurality of FOUPs containing a plurality of wafers, and a second space in which a processing device is installed to process the wafers stored in the first space; a load port module installed in the first space of the integrated semiconductor-processing body to open the FOUPs to enable extraction of wafers from the FOUPs; and a transfer device which extracts wafers from the FOUPs and transfers the wafers to the processing device in the second space.03-07-2013
20130055953SUBSTRATE SUPPORT, SUBSTRATE PROCESSING DEVICE AND METHOD OF PLACING A SUBSTRATE - A substrate support for supporting a substrate in a processing chamber comprises a frame for carrying the substrate, at least a first fastening means fixedly attached to the frame for aligning the substrate relative to the frame, and at least a second fastening means movably attached to the frame, the second fastening means being movable relative to the frame and/or the substrate. Furthermore, a processing device comprises an edge exclusion projecting over a portion of the surface of the substrate in order to prevent processing of the portion of the surface of the substrate. A part of the edge exclusion may be moved into a gap between the edge(s) of the substrate and the frame element of the substrate support to form a labyrinth seal between the frame element and the edge of the substrate. A method of placing the substrate on the substrate support is also disclosed.03-07-2013
20090235867SUSCEPTOR FOR VAPOR PHASE EPITAXIAL GROWTH DEVICE - There is provided a susceptor for a vapor phase epitaxial growth device, by which skidding at the time of loading a silicon wafer is prevented and the wafer can be loaded at a fixed position of the susceptor: wherein a ring-shaped groove having sloping planes widening toward a surface of the susceptor are formed on the outermost circumference of the bottom surface; and gas release openings penetrating through to the back surface of the susceptor are formed, each having a sectional area of 2.0 to 3.0 mm09-24-2009
20090013933SEMICONDUCTOR MANUFACTURING DEVICE - The present invention relates to a semiconductor manufacturing device that a maintenance or a repairing is easy so that an efficiency of manufacturing can be enhanced because a high temperature of a susceptor can be rapidly down. The present invention relates to a semiconductor manufacturing device that an efficiency of manufacturing can be enhanced because a heater for heating the semiconductor is heated by an external heating device.01-15-2009
20080295773SUBSTRATE SUPPORT, SUBSTRATE PROCESSING DEVICE AND METHOD OF PLACING A SUBSTRATE - A substrate support for supporting a substrate in a processing chamber comprises a frame for carrying the substrate, at least a first fastening means fixedly attached to the frame for aligning the substrate relative to the frame, and at least a second fastening means movably attached to the frame, the second fastening means being movable relative to the frame and/or the substrate. Furthermore, a processing device comprises an edge exclusion projecting over a portion of the surface of the substrate in order to prevent processing of the portion of the surface of the substrate. A part of the edge exclusion may be moved into a gap between the edge(s) of the substrate and the frame element of the substrate support to form a labyrinth seal between the frame element and the edge of the substrate. A method of placing the substrate on the substrate support is also disclosed.12-04-2008
20090314210Epitaxial growth susceptor - A susceptor for use in an epitaxial growth apparatus and method where a plurality of circular through-holes are formed in the bottom wall of a pocket in an outer peripheral region a distance of up to about ½ the radius toward the center of the circular bottom wall. The total opening surface area of these through-holes is 0.05 to 55% of the surface area of the bottom wall. The opening surface area of each of the through-holes provided at this outer peripheral region is 0.2 to 3.2 mm12-24-2009
20120285383MOUNTING FOR FIXING A REACTOR IN A VACUUM CHAMBER - The present invention provides a mounting, configured for fixing a reactor, in particular a PECVD reactor, in a vacuum chamber (11-15-2012
20120285382EPITAXIAL GROWTH APPARATUS AND EPITAXIAL GROWTH METHOD - A susceptor support shaft for an epitaxial growth apparatus capable of forming a high quality epitaxial film by suppressing in-plane resistance variation of the epitaxial film due to deflection of a susceptor, wherein the susceptor support shaft supports a susceptor at an underneath portion of the susceptor in an epitaxial growth apparatus. The susceptor support shaft includes a support column located substantially coaxial with a center of the susceptor; a plurality of arms extending radially from the support column to positions under a peripheral portion of the susceptor; an arm connecting member connecting tips of the arms next to each other; and support pins extending from the arm connecting member, thereby supporting the susceptor.11-15-2012
20110283944CVD APPARATUS - A CVD apparatus is provided, that can remarkably improve the quality and productivity of susceptors without causing increase in production cost or increase in size of the apparatus. A CVD apparatus is provided, for forming a SiC film on a surface of a carbonaceous substrate (11-24-2011
20110271909COATING APPARATUS - A coating apparatus includes a base, actuators, separating boards and a gas guide grill. The base includes a carrying surface for supporting a workpiece. The base defines recesses on the carrying surface. The actuators include shafts rotatably located in the recesses correspondingly, and motors for driving the shafts. The separating boards are located above the carrying surface and securely connected to the shafts. The separating boards define chambers therebetween. The separating boards are capable of being rotated toward the carrying surface by the shafts. The gas guide grill is located above the base. The gas guide grill defines gas guide holes corresponding to the chambers respectively.11-10-2011
20100101496WAFER CARRIER AND EPITAXY MACHINE USING THE SAME - A wafer carrier comprises a base and a shielding plate positioned on the top surface of the base in a disassembled manner. The top surface of the base is configured to retain a plurality of wafers, and the shielding plate has a plurality of openings exposing the wafers. In particular, the shielding plate shields one portion of the base other than the other portions occupied by the wafers to prevent the reaction gases from conducting the chemical reaction to generate the reactant directly on the surface of the base. Consequently, the base is isolated from the chemical reaction, and it is not necessary to replace the base before conducting the next fabrication process or to clean the reactants on the surface of the base by thermal baking or etching.04-29-2010
20080314320Chamber Mount for High Temperature Application of AIN Heaters - A susceptor for high temperature semiconductor processing is provided. The susceptor includes a substrate support joined to a hollow shaft having a pair of ports to allow an inert gas to be purged through an internal volume of the shaft. Some embodiments of the susceptor include a chamber mount to support the shaft within a processing chamber and a chamber mount insert disposed within the chamber mount. In these embodiments the chamber mount insert includes the ports. The chamber mount insert can also include a thermocouple tube with a fitting to seal around the thermocouple and to impart an upward pressure to the thermocouple to keep the thermocouple properly seated within the substrate support. The chamber mount insert can also include electrical connectors with glass-to-metal seals.12-25-2008
20100282170VAPOR PHASE GROWTH SUSCEPTOR AND VAPOR PHASE GROWTH APPARATUS - The present invention provides a vapor phase growth susceptor as a susceptor that supports a wafer in a vapor phase growth apparatus for subjecting a thin film to vapor phase growth on a wafer surface, wherein a pocket configured to accommodate a wafer is formed in the susceptor, many rectangular protrusions are formed of grooves having a mesh pattern on a bottom surface of the pocket, and a groove depth at an outer peripheral portion is shallower than that at a central portion of the bottom surface of the pocket. As a result, problems such as a reduction in film thickness due to a drop in temperature at the wafer outer peripheral portion, warpage at the time of mounting the wafer, deposition on a wafer back surface outer peripheral portion, and others are improved.11-11-2010
20120180726SUSCEPTOR AND CHEMICAL VAPOR DEPOSITION APPARATUS COMPRISING THE SAME - Susceptor and chemical vapor deposition (CVD) apparatus including the same. The susceptor includes: a plurality of susceptor slices that form a disk when combined together; and at least one pocket disposed on an upper surface of each of the plurality of susceptor slices and containing a member on which a material is to be deposited, wherein, a connection part is formed between side surfaces of neighboring susceptor slices and allows the plurality of susceptor slices to be combined to each other in a separable/detachable manner.07-19-2012
20090266300SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PLACING TABLE - A film forming apparatus includes a process chamber 10-29-2009
20090165721Susceptor with Support Bosses - A susceptor for supporting a semiconductor wafer during a chemical vapor deposition process includes a body having opposing upper and lower surfaces. Support bosses extend downward from the lower face of the body. Each support boss has a boss opening sized and shaped for receiving a support post of a chemical vapor deposition device to mount the susceptor on the support post.07-02-2009
20080282984Method of fabricating light-emitting device and apparatus for manufacturing light-emitting device - In this embodiment, an interval distance between a deposition source holder 11-20-2008
20080308042APPARATUS FOR PLASMA-PROCESSING FLEXIBLE PRINTED CIRCUIT BOARDS - The present invention relates to an apparatus for plasma-processing of flexible printed circuit boards (FPCBs). The apparatus includes a plasma-discharging chamber, two electrodes arranged in the chamber for generating plasma in the chamber, a frame, and two elongated holding arms disposed on the frame. The frame includes a number of spaced parallel first bars and a number of spaced parallel second bars. The first bars intersecting with the second bars. The elongated holding arms are substantially parallel with each other. Each of the arms has an inner sidewall. The inner sidewalls of the elongated holding arms are opposite to each other. An elongated recess is defined in each of the inner sidewalls proximate to the frame. The apparatus can ensure uniform plasma-processing and protect FPCBs from being burned.12-18-2008
20080276869Substrate holder - In order to achieve an as uniform as possible temperature over the entire surface of the substrate (11-13-2008
20110048328APPARATUS FOR GASEOUS VAPOR DEPOSITION - A vapor deposition apparatus includes an insert within which a material is deposited on the surface of a film. A cassette includes end plates each having a rib that edgewise receive a spiral wrapping of a film at least 300 mm wide. Spaces between turns of the wrapping define a gas flow channel and spaces between adjacent turns of one rib define inlet openings that communicate with the channel. Each rib has a predetermined width dimension, a predetermined average thickness dimension, and a width-to-thickness aspect ratio of at least 2:1. The spacing between end plates is at least 300 mm and is also greater than the film width at deposition temperature. The width dimension of each rib is between about 0.5% to about 2.0% of the end plate spacing. A diverging flow director contacts one end plate to directing gaseous fluid toward the inlet openings in that end plate.03-03-2011
20090025641METHOD, SYSTEM, AND APPARATUS FOR THE GROWTH OF ON-AXIS SiC AND SIMILAR SEMICONDUCTOR MATERIALS - A novel approach for the growth of high-quality on-axis epitaxial silicon carbide (SiC) films and boules, using the Chemical Vapor Deposition (CVD) technique, is described here. The method includes a method of substrate preparation, which allows for the growth of “on-axis” SiC films, plus an approach giving the opportunity to grow silicon carbide on singular (a small-angle miscut) substrates, using halogenated carbon-containing precursors (carbon tetrachloride, CCl01-29-2009
20090199768MAGNETIC DOMAIN PATTERNING USING PLASMA ION IMPLANTATION - A method for defining magnetic domains in a magnetic thin film on a substrate, includes: coating the magnetic thin film with a resist; patterning the resist, wherein areas of the magnetic thin film are substantially uncovered; and exposing the magnetic thin film to a plasma, wherein plasma ions penetrate the substantially uncovered areas of the magnetic thin film, rendering the substantially uncovered areas non-magnetic. A tool for this process comprises: a vacuum chamber held at earth potential; a gas inlet valve configured to leak controlled amounts of gas into the chamber; a disk mounting device configured to (1) fit within the chamber, (2) hold a multiplicity of disks, spacing the multiplicity of disks wherein both sides of each of the multiplicity of disks is exposed and (3) make electrical contact to the multiplicity of disks; and a radio frequency signal generator electrically coupled to the disk mounting device and the chamber, whereby a plasma can be ignited in the chamber and the disks are exposed to plasma ions uniformly on both sides.08-13-2009
20080264343Vertical heat treatment apparatus and method of transferring substrates to be processed - Disclosed herein is a vertical heat treatment apparatus which includes a thermal reactor having a reactor opening, a cover that hermetically closes the reactor opening, a holder that holds a large number of to-be-processed substrates via a ring-shaped support plate in such a manner as to arrange the substrates vertically at predetermined intervals, and an elevator mechanism that loads the holder into and unloads the holder from the thermal reactor. A transfer mechanism has a plurality of transfer plates that are arranged at predetermined intervals to carry to-be-processed substrates, and transfers the to-be-processed substrates between the storage container and the holder. The support plate is divided into an outer support plate and an inner support plate. The outer support plate has a cutout section through which the transfer plates can vertically pass to transfer the to-be-processed substrates. The inner support plate is placed at the inner periphery of the outer support plate and provided with a block section for blocking up the cutout section. Therefore, a plurality of to-be-processed substrates can be transferred at a time to the holder having the ring-shaped support plate. This makes it possible to reduce the transfer time, increase the processing volume, and provide increased throughput.10-30-2008
20090084317ATOMIC LAYER DEPOSITION CHAMBER AND COMPONENTS - An atomic layer deposition chamber comprises a gas distributor comprising a central cap having a conical passageway between a gas inlet and gas outlet. The gas distributor also has a ceiling plate comprising first and second conical apertures that are connected. The first conical aperture receives a process gas from the gas outlet of the central cap. The second conical aperture extends radially outwardly from the first conical aperture. The gas distributor also has a peripheral ledge that rests on a sidewall of the chamber.04-02-2009
20090165722APPARATUS FOR TREATING SUBSTRATE - An apparatus for treating a substrate includes: a chamber including an upper lid; a rear plate in the chamber; a gas distributing plate under the rear plate, the gas distributing plate including a plurality of injection holes, the gas distributing plate combined with the upper lid using a plurality of first coupling means; and a substrate holder under the gas distributing plate, the substrate holder having the substrate thereon.07-02-2009
20090255470ALD REACTOR - The invention relates to a reaction chamber of an ALD reactor which comprises a bottom wall, a top wall and side walls extending between the bottom wall and the top wall which define an inner portion (10-15-2009
20120103264METHODS AND APPARATUS FOR DEPOSITING A UNIFORM SILICON FILM WITH FLOW GRADIENT DESIGNS - Methods and apparatus having a flow gradient created from a gas distribution plate are provided. In one embodiment, the method and apparatus are particularly useful for, but not limited to, depositing a silicon film for solar cell applications. The apparatus for depositing a uniform film for solar cell applications includes a processing chamber, and a quadrilateral gas distribution plate disposed in the processing chamber and having at least four corners separated by four sides. The gas distribution plate further includes a first plurality of chokes formed through the gas distribution plate, the first plurality of chokes located in the corners, and a second plurality of chokes formed through the gas distribution plate, the second plurality of chokes located along the sides of the gas distribution plate between the corner regions, wherein the first plurality of chokes have a greater flow resistance than that of the second plurality of chokes.05-03-2012
20120103263PRE-HEAT RING DESIGNS TO INCREASE DEPOSITION UNIFORMITY AND SUBSTRATE THROUGHPUT - Embodiments of the present invention generally relates to apparatus for use in film depositions. The apparatus generally include pre-heat rings adapted to be positioned in a processing chamber. In one embodiment, a pre-heat ring includes a ring having an inner edge and an outer edge. The outer edge has a constant radius. The inner edge is oblong-shaped and may have a first portion having a constant radius measured from a center of a circle defined by an outer circumference of the ring. A second portion may have a constant radius measured from a location other than the center of the outer circumference. In another embodiment, a processing chamber includes a pre-heat ring positioned around the periphery of a substrate support. The pre-heat ring includes an inner edge having a first portion, a second portion, and one or more linear portions positioned between the first portion and the second portion.05-03-2012
20090078204DEPOSITION SYSTEM FOR THIN FILM FORMATION - An apparatus for maintaining the alignment or positional relationship between at least two coating modules in an ALD system, the apparatus comprising a plurality of coating modules in a coating section, at least a first bar and a second bar for supporting the coating modules, and at least a first bar mounting structure and a second bar mounting structure for supporting the bars, wherein each of the coating modules are supported by the first bar and the second bar, and wherein the combination of the at least two coating modules and the first bar and the second bar define a coating section profile for the output faces of the coating modules. Also disclosed is a process for making such apparatus.03-26-2009
20120031340REACTION APPARATUS HAVING MULTIPLE ADJUSTABLE EXHAUST PORTS - A reaction apparatus for a semiconductor fabrication apparatus, wherein the reaction apparatus includes at least two adjustable outlet ports for withdrawing reactant gases from the reaction chamber. Adjustment of the flow rate through each of the outlet ports selectively modifies the flow pattern of the reactant gases within the reaction chamber to maintain a desired flow pattern therewithin, such as a substantially uniform flow over the surface of a substrate being processed, and/or minimization of turbulence within the reactor.02-09-2012
20100218725APPARATUS FOR MANUFACTURE OF SOLAR CELLS - The present invention relates to equipment used to manufacture PV cells or modules. In some embodiments, a gas delivery and gas exhaust system are provided for processing a plurality of substrates. The gas delivery and gas exhaust system are designed such that the substrates are exposed in a uniform manner to the gas.09-02-2010
20100139565PARTICLE-MEASURING SYSTEM AND PARTICLE-MEASURING METHOD - The present invention provides a particle measuring system which is provided in a processing system 06-10-2010
20090071407SEMICONDUCTOR PROCESSING PARTS HAVING APERTURES WITH DEPOSITED COATINGS AND METHODS FOR FORMING THE SAME - Holes in semiconductor processing reactor parts are sized to facilitate deposition of protective coatings, such chemical vapor deposition at atmospheric pressure. In some embodiments, the holes each have a flow constriction that narrows the holes in one part and that also divides the holes into one or more other portions. In some embodiments, the aspect ratios of the one or more other portions are about 15:1 or less, or about 7:1 or less, and have a cylindrical or conical cross-sectional shape. The holes are coated with a protective coating, such as a silicon carbide coating, by chemical vapor deposition, including chemical vapor deposition at atmospheric pressure.03-19-2009
20100294200VAPOR CHAMBER AND METHOD FOR MANUFACTURING THE SAME - A vapor chamber includes a sealed flattened casing containing working liquid therein, a wick structure arranged on an inner face of the casing, a supporting plate received in the casing and a plurality of supporting posts. The supporting plate defines a plurality of fixing holes therein. The supporting posts are engagingly received in the fixing holes of the supporting plate. Top and bottom ends of the supporting posts engage with the wick structure to reinforce a structure of the vapor chamber.11-25-2010
20110126766COATING APPARATUS - A coating apparatus includes a deposition case, a reaction assembly, two precursors, a target, and a driving assembly. The deposition case includes a housing defining a cavity for receiving workpieces. The reaction assembly receives in the cavity and includes an outer barrel, an inner barrel, a plurality of nozzles, and a plurality of pipes. The outer barrel includes a main body and two protruding bodies. The main body and the inner barrel cooperatively define a first room therebetween. Each protruding body defines a second room communicating with the first room. The inner barrel defines a third room. The nozzles extend from the main body and communicate with the first room. The pipes extend from the inner barrel and communicate with the third room. The precursors receive in the second rooms. The target receives in the third room. The driving assembly drives the housing to rotate relative to the reaction assembly.06-02-2011
20100319622FILM COATING APPARATUS FOR CHEMICAL VAPOR DEPOSITION AND PHYSICAL VAPOR DEPOSITION - An exemplary film coating apparatus includes a housing, a holder for holding a workpiece, and a coating source. The housing defines a chamber therein. The holder and the coating source are received in the chamber. The coating source includes a supporting plate and a number of gas jetting heads. The supporting plate includes a first surface facing the holder, and defines a receiving recess at the first surface configured for receiving a target material, and a number of through holes. The gas jetting heads are capable of introducing one or more gases into the chamber, each gas jetting head passes through one respectively through hole and is fixed in the through hole.12-23-2010
20110073040SUBSTRATE TREATMENT APPARATUS - A substrate treatment apparatus includes: a treatment chamber in which a substrate is treated; a substrate holding unit which holds the substrate in the treatment chamber; a shield member disposed above the substrate holding unit and having an opposing surface to be brought into opposed relation to the substrate holding unit; and a gas supply portion which has a downward gas supply port having an annular shape to surround the shield member as seen in plan and is disposed on an upper portion of the treatment chamber for supplying a gas into the treatment chamber.03-31-2011
20090250008GAS TREATMENT APPARATUS - A film forming apparatus includes a chamber for accommodating a wafer; a mounting table arranged in the chamber to mount the wafer thereon; a shower head arranged to face the mounting table for injecting a processing gas into the chamber; and a gas exhaust mechanism for evacuating the chamber. The shower head is provided with a center portion in which a plurality of gas injection holes are formed for injecting the processing gas; and an outer peripheral portion disposed at outside of the center portion without having the gas injection holes. The film forming apparatus further includes a heat dissipating mechanism for dissipating heat of the shower head from the entire circumference of the outer peripheral portion to the atmosphere.10-08-2009
20090217877Epitaxial reactor for mass production of wafers - A high throughput reactor for the mass production of wafers through chemical vapor deposition, mainly to form silicon epitaxies for the photovoltaic industry, is described. main innovation is a high susceptor stacking density: several graphite susceptors are placed vertically and parallel to one another, electrically interconnected, and are heated by Joule effect. Electrical current gets to the susceptors from the current source through specially designed feedthroughs, which connect the cold room outside the deposition chamber with the hot susceptors. Gas flows vertically between susceptors. The substrates on which deposition occurs are placed on the susceptors. Below the susceptors a pre-chamber is found, in which entering gas calms down and distributes homogeneously. Susceptors and pre-chamber are placed inside a stainless steel chamber, which is internally covered by a reflecting material, and externally kept cold by water. Both susceptors and pre-chamber are fixed to a connection panel, which also contains electrical feedthroughs, thermocouple feedthroughs, and gas inlet and outlet. Outlet gases are partially recycled, with the corresponding gas savings and increased deposition efficiency.09-03-2009
20090031955VACUUM CHUCKING HEATER OF AXISYMMETRICAL AND UNIFORM THERMAL PROFILE - Embodiments of a vacuum chuck having an axisymmetrical and/or more uniform thermal profile are provided herein. In some embodiments, a vacuum chuck includes a body having a support surface for supporting a substrate thereupon; a plurality of axisymmetrically arranged grooves formed in the support surface, at least some of the grooves intersecting; and a plurality of chucking holes formed through the body and within the grooves, the chucking holes for fluidly coupling the grooves to a vacuum source during operation, wherein the chucking holes are disposed in non-intersecting portions of the grooves.02-05-2009
20100064973Apparatus and method for making carbon nanotube array - An apparatus for making an array of carbon nanotubes includes a reaction chamber with a gas inlet and a gas outlet, a quartz boat disposed in the reaction chamber, a substrate with a surface deposited with a film of first catalyst, and a second catalyst disposed in the quartz beside the substrate. The substrate is disposed in the quartz boat.03-18-2010
20110073041Epitaxially Coated Semiconductor Wafer and Device and Method For Producing An Epitaxially Coated Semiconductor Wafer - In a method for producing epitaxially coated semiconductor wafers, a multiplicity of prepared, front side-polished semiconductor wafers are successively coated individually with an epitaxial layer on their polished front sides at temperatures of 800-1200° C. in a reactor, while supporting the prepared semiconductor wafer over a susceptor having a gas-permeable structure, on a ring placed on the susceptor which acts as a thermal buffer between the susceptor and the supported semiconductor wafer, the semiconductor wafer resting on the ring, and its backside facing but not contacting the susceptor, so that gaseous substances are delivered from a region over the backside of the semiconductor wafer by gas diffusion through the susceptor into a region over the backside of the susceptor, the semiconductor wafer contacting the ring only in an edge region of its backside, wherein no stresses measurable by means of photoelastic stress measurement (“SIRD”) occur in the semiconductor wafer.03-31-2011
20100236482PLASMA FILM FORMING APPARATUS - An object is to provide a plasma film forming apparatus capable of reducing particles even in the case in which a film is formed by applying a bias to a substrate. In the plasma film forming apparatus in which a bias is applied to a substrate (09-23-2010
20110067632STACKABLE MULTI-PORT GAS NOZZLES - One embodiment provides a reactor for material deposition. The reactor includes a chamber and at least one gas nozzle. The chamber includes a pair of susceptors, each having a front side and a back side. The front side mounts a number of substrates. The susceptors are positioned vertically so that the front sides of the susceptors face each other, and the vertical edges of the susceptors are in contact with each other, thereby forming a substantially enclosed narrow channel between the substrates mounted on different susceptors. The gas nozzle includes a gas-inlet component situated in the center and a detachable gas-outlet component stacked around the gas-inlet component. The gas-inlet component includes at least one opening coupled to the chamber, and is configured to inject precursor gases into the chamber. The detachable gas-outlet component includes at least one opening coupled to the chamber, and is configured to output exhaust gases from the chamber.03-24-2011
20110048327FILM CASSETTE FOR GASEOUS VAPOR DEPOSITION - A cassette for supporting a film during a gaseous vapor deposition process includes a central shaft having first and second end plates. A rib on each end plate forms a spiral groove able to accept an edge of a film. Each rib has a cross sectional configuration having substantially linear major edges, a predetermined width dimension and a predetermined average thickness dimension, and a width-to-thickness aspect ratio of at least 2:1. The rib could be substantially rectangular with an optional flow spoiler at the free end or substantially wedge-shaped. The interspoke spacing between end plates is at least three hundred millimeters (300 mm) and is also greater than the width dimension of a film substrate at a gaseous deposition temperature. The width dimension of each rib is between about 0.5% to about 2.0% of the interspoke spacing.03-03-2011
20090000552SUBSTRATE HOLDER AND VACUUM FILM DEPOSITION APPARATUS - A vacuum film deposition apparatus in which a film is formed on a substrate by a vacuum film deposition process includes a holder which has a substrate supporting surface which is in a curved shape and is brought into contact with the substrate. A substrate holder for holding the substrate includes a base having the substrate supporting surface. The apparatus and the substrate holder further include a contact detection mechanism which detects a state of contact between the substrate and the substrate supporting surface, a load applying mechanism which is provided outside the substrate supporting surface and supports the substrate by applying a load to end faces of the substrate and a control unit which controls the load the load applying mechanism applies to the substrate based on output from the contact detection mechanism.01-01-2009
20080314321PLASMA PROCESSING APPARATUS - The object of the present invention is to provide a plasma processing apparatus capable of processing a substrate stably for a long period of time. The plasma processing apparatus has a substrate holder disposed in a processing chamber and an electrode cover for protecting a support stage of said substrate holder, for processing a wafer placed on said support stage using a plasma generated in the processing chamber, wherein at least a surface of said electrode cover that is positioned directly below an edge of the wafer, or at least a surface of said electrode cover that comes into contact with plasma, is coated with a material having resistance to plasma and comprising Y12-25-2008
20080314319SUSCEPTOR FOR IMPROVING THROUGHPUT AND REDUCING WAFER DAMAGE - A susceptor for supporting a semiconductor wafer in a heated chamber having an interior space. The susceptor includes a body having an upper surface and a lower surface opposite the upper surface. The susceptor also has a recess extending downward from the upper surface into the body along an imaginary central axis. The recess is sized and shaped for receiving the semiconductor wafer therein. The susceptor includes a plurality of lift pin openings extending through the body from the recess to the lower surface. Each of the lift pin openings is sized for accepting lift pins to selectively lift and lower the wafer with respect to the recess. The susceptor has a central opening extending through the body along the central axis from the recess to the lower surface.12-25-2008
20100212595Support Assembly For Substrate Holder, As Well As A Device Provided With Such A Support Assembly For Layered Deposition Of Various Semiconductor Materials On A Semiconductor Substrate - The invention relates to a support assembly for a substrate holder on which a semiconductor substrate is to be placed for layered deposition of various semiconductor materials on the semiconductor substrate, said support assembly comprising: at least one vertically disposed, rotatably drivable support shaft, as well as a substrate holder support supporting the substrate holder, which is to be placed on the free end of said support shaft, as well as fixation means are arranged for fixing the support shaft and the substrate holder support in position relative to each other.08-26-2010
20090308319WAFER CARRIER AND EPITAXY MACHINE USING THE SAME - A wafer carrier comprises a base and a shielding plate positioned on the top surface of the base in a disassembled manner. The top surface of the base is configured to retain a plurality of wafers, and the shielding plate has a plurality of openings exposing the wafers. In particular, the shielding plate shields one portion of the base other than the other portions occupied by the wafers to prevent the reaction gases from conducting the chemical reaction to generate the reactant directly on the surface of the base. Consequently, the base is isolated from the chemical reaction, and it is not necessary to replace the base before conducting the next fabrication process or to clean the reactants on the surface of the base by thermal baking or etching.12-17-2009
20110259270CARBON COMPONENT AND METHOD FOR MANUFACTURING THE SAME - A carbon component having a hole therein and an outer surface covered with a ceramic coating, and a method for manufacturing the carbon component are provided. The carbon component includes two carbon plate members joined together. The hole is defined by a groove formed on a mating surface of at least one of the carbon plate members and a mating portion of the other of the carbon plate members, which opposes the groove. An inner surface of the hole including a surface of the groove is entirely covered with a ceramic coating.10-27-2011
20090260571Showerhead for chemical vapor deposition - A CVD showerhead is connected to a chamber top via a leveling assembly. The leveling assembly allows the showerhead to pivot when a bellows in the leveling assembly is adjusted from outside the chamber. With the improved showerhead, leveling calibration can occur from outside of the chamber without having to pressurize and open the chamber top. Thus downtime is reduced.10-22-2009
20090107403BRAZED CVD SHOWER HEAD - A shower head for a chemical vapor deposition chamber can have a housing, a plurality of bosses formed upon the housing, and an inside cover. The bosses can have bores formed therethrough. The inside cover can be attached to the bosses and can have apertures formed therein such that the apertures are generally contiguous with the bores. The housing, the bosses, and the inside cover cooperate to communicate water through the shower head. The water can cool the shower head to a temperature that is substantially lower than the temperature of other parts of the chemical vapor deposition chamber, e.g., the susceptor thereof.04-30-2009
20110155062FILM DEPOSITION APPARATUS - A film deposition apparatus includes a turntable including a substrate placement region at its surface; first and second reaction gas supply parts disposed in first and second supply regions in a chamber and supplying first and second reaction gases onto the surface, respectively; a separation region disposed between the first and second supply regions, the separation region including a separation gas supply part ejecting a separation gas separating the first and second reaction gases and a ceiling surface forming a separation space to supply the separation gas to the first and second supply regions; and first and second evacuation ports provided for the first and second supply regions. At least one of the first and second evacuation ports is disposed so as to guide the separation gas, supplied to the corresponding supply region, toward and along a direction in which the corresponding reaction gas supply part extends.06-30-2011
20100275848HEAT TREATMENT APPARATUS - Provided is a heat treatment apparatus that can form films having a uniform thickness on a plurality of substrates. The heat treatment apparatus comprises a process chamber configured to grow silicon carbide (SiC) films on wafers, a boat configured to hold a plurality of wafers in a state where the wafers are vertically arranged and approximately horizontally oriented so as to hold the wafers in the process chamber, a heating unit installed in the processing chamber, and a gas supply nozzle configured to supply a reaction gas. The heating unit comprises a susceptor configured to cover at least a part of the boat, and a susceptor wall disposed between the boat and the susceptor.11-04-2010
20120118235FILM COATING DEVICE - A film coating device includes a film coating holder, a film coating cover, and a filter plate. The film coating holder includes a number of through holes defined therein for receiving workpieces to be coated. The film coating cover covers the film coating holder from a top side of the film coating holder. The filter plate is mounted on a bottom of the film coating holder, and defines a number of filter holes for letting vaporized coating material through and blocking impurities.05-17-2012
20120160173Vapor Based Processing System with Purge Mode - Embodiments of the present invention provide vapor deposition tools. In one example, a vapor deposition tool includes housing. A substrate support is positioned within the housing and configured to support a substrate. A backing plate is positioned above the substrate support. A showerhead is positioned between the substrate support and the backing plate and has a plurality of openings therethrough. A fluid trap member is positioned around a periphery of the showerhead. A fluid trap member actuator is coupled to the fluid trap member and configured to move the fluid trap member between first and second positions relative to the backing plate.06-28-2012
20120227667SUBSTRATE CARRIER WITH MULTIPLE EMISSIVITY COEFFICIENTS FOR THIN FILM PROCESSING - Substrate carrier having multiple emissivity coefficients for thin film processing and more particularly for support of a substrate during a deposition process epitaxially growing a film on the substrate. A front side of the carrier has a first carrier surface upon which the substrate is to be disposed, the first carrier surface having a first emissivity coefficient different than a second emissivity coefficient of a second carrier surface adjacent to the first carrier surface. Selection of the second emissivity coefficient independent of the first emissivity coefficient may modify an amount of energy radiated from the second carrier surface during processing of the substrate. In one embodiment, the second carrier surface has a second emissivity coefficient which is lower than the first emissivity coefficient to reduce heat loss from the carrier surface while maintaining high efficiency energy transfer between the carrier and a substrate.09-13-2012
20100229796Manufacturing apparatus of polycrystalline silicon - An apparatus for manufacturing polycrystalline silicon whereby raw-material gas is supplied to one or more heated silicon seed rods provided vertically in a reactor so as to deposit the polycrystalline silicon on a surface of the silicon seed rod, having a seed rod holding member, made of conductive material, having a holding hole in which a lower end of the silicon seed rod is inserted, the holding hole having a horizontal cross-sectional shape with at least two corners, and the holding member having a screw hole extending from the outer surface of the seed rod holding member to at least the holding hole and formed at the location of at least two corners of the holding hole; and a fixing screw which fixes the silicon seed rod and is threaded through at least one of the screw holes.09-16-2010
20080236497METHOD AND SYSTEM FOR IMPROVING DEPOSITION UNIFORMITY IN A VAPOR DEPOSITION SYSTEM - A processing system for treating a substrate includes a process chamber, a substrate holder, a gas distribution system, and a flow modulation element. The process chamber has a pumping system to evacuate the process chamber. The substrate holder is coupled to the process chamber and supports the substrate. The gas distribution system is coupled to the process chamber. The gas distribution system introduces a process gas to a process space above an upper surface of the substrate. The flow modulation element is coupled to the substrate holder beyond a peripheral edge of the substrate. The flow modulation element includes one or more gas distribution openings that introduce an additive process gas beyond the peripheral edge of the substrate in a direction substantially away from the substrate. The additive process gas has a directional component substantially parallel to the upper surface of the substrate10-02-2008
20110253049Semiconductor processing apparatus - There is provided a semiconductor processing apparatus comprising a processing tube for housing a substrate support member that supports a plurality of substrates stacked at a prescribed pitch in a vertical direction; a gas supply part that extends in a direction in which the substrates are stacked in the processing tube and that has a plurality of gas supply openings; an exhaust part that opens onto the processing tube; a gas rectifying plate that is disposed in a space between a penumbra of the substrates supported on the substrate support member and an inner wall of the processing tube, and that extends from the gas supply part in a circumferential direction of the processing tube and in the direction in which the substrates are stacked; and a gas flow regulating part disposed in a space in the processing tube that is above a top-most gas supply opening and a top-most substrate and in a space in the processing tube that is below a bottom-most substrate and a bottom-most gas supply opening. A thin film formed on the substrate can be made more uniform.10-20-2011
20130167774BATCH TYPE APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICES - A batch type apparatus may include a tube; a boat configured to receive a plurality of semiconductor substrates, the boat vertically moved into the tube; a gas nozzle vertically arranged in the tube, the tube having a first portion and a second portion upwardly extended from the first portion; a gas pipe for supplying reaction gases to the gas nozzle, the gas pipe having a horizontal extension and a vertical extension, and the vertical extension extended in the gas nozzle; a fixing member for fixing the first portion of the gas nozzle to the gas pipe, the fixing member having strength higher than that of the gas nozzle; and a clamping member for clamping the gas pipe to the tube. Therefore, breakage of the gas nozzle may be suppressed.07-04-2013
20130098293CHEMICAL VAPOR DEPOSITION APPARATUS - A chemical vapor deposition apparatus can include a reaction chamber having a reaction space therein; a wafer boat disposed in the reaction space, the wafer boat arranged and structured to support a plurality of wafers; and a gas supplying part disposed in the reaction chamber to supply two or more reaction gases to the plurality of wafers. The gas supplying part can include a plurality of gas pipes disposed in the reaction chamber to supply the two or more reaction gases from outside to the reaction space; and a plurality of supplying pipes disposed around the wafer boat, wherein each of the supplying pipes is connected to two or more corresponding gas pipes, and wherein each supplying pipe is configured to supply the two or more reaction gases supplied by the two or more corresponding gas pipes to a corresponding one of the wafers.04-25-2013
20130180454THIN FILM DEPOSITION APPARATUS - Provided is a thin film deposition apparatus which comprises a chamber, a susceptor, a source gas supply part, and a susceptor support. The chamber has an inner space in which a deposition process is performed. The susceptor is disposed within the chamber to directly support a plurality of substrates along a circumference of a center of a top surface or support a substrate holder on which at least one substrate is disposed. The source gas supply part supplies first and second source gases into a central portion of an upper side of the susceptor in a state where the first and second gases are separated from each other. Also, the source gas supply part respectively injects the first and second source gases separated from each other toward a circumference of the susceptor through vertically arranged source gas injection holes to supply the first and second source gases onto the substrates disposed on the susceptor. The susceptor support is configured to support a center of the susceptor from a lower side of the susceptor. Also, the susceptor support includes an additional gas supply part for injecting an additional gas introduced from the outside onto a top surface of the susceptor.07-18-2013
20110283943VAPOR DEPOSITION APPARATUS - A vapor deposition apparatus includes a deposition chamber, an umbrella-shaped supporting member, a plurality of coating precursor sources. The umbrella-shaped supporting member is received in the deposition chamber. The supporting member is configured for supporting a number of workpieces. The coating precursor sources oppose the supporting member. Each coating precursor source includes a stationary sleeve and a moveable member moveably received in the stationary sleeve. The moveable member defines a recess for receiving a coating material in a top end of the moveable member opposing the supporting member. The moveable members are moveable relative to the respective stationary sleeve such that a distance between the supporting member and the coating material in each recess can be adjusted.11-24-2011
20110303154SUSCEPTOR AND CHEMICAL VAPOR DEPOSITION APPARATUS INCLUDING THE SAME - A susceptor and a chemical vapor deposition (CVD) apparatus including the same. The susceptor has a shape of a disk with a hollow and includes a plurality of pockets formed in an upper surface of the susceptor to accommodate deposition targets; and susceptor channels formed in the susceptor to supply a flowing gas to the plurality of pockets. Inlets of the susceptor channels are formed in a sidewall of the hollow. Alternatively, the inlets of the susceptor channels are formed in a lower surface of the susceptor and a reinforcement unit is further formed.12-15-2011
20110308464SUBSTRATE PROCESSING APPARATUS, METHOD FOR PROCESSING SUBSTRATE, AND STORAGE MEDIUM - Processing gas is supplied from the central upper part of a processing chamber to a wafer on a mounting board, while the processing chamber is exhausted from processing gas exhaust passages at areas outside of the wafer. In addition, purge gas is supplied from purge gas supply passages to a buffer chamber formed between the peripheral part of a container main body and that of a cover body. The supplied flow-rate of the processing gas is made less than the exhaust flow-rate in the processing gas exhaust passages. Accordingly, the purge gas in the buffer chamber is drawn into the processing chamber via a purge gas supply hole formed of a gap between the container main body and the cover body due to a negative pressure inside the processing chamber caused by a difference between the flow rates.12-22-2011
20130186340Vacuum Film Forming Apparatus - A stage holds the substrate inside the vacuum chamber, gas supply device alternately supplies gases to the substrate, and exhaust device exhausts gases inside the vacuum chamber. The gas supply device has at least one ejection nozzle, disposed on one side of the stage, for ejecting the gases from one side of the substrate to the other side thereof and also along an upper surface of the substrate. In this case, that surface side of the substrate held by the stage on which the thin film is formed is defined as the upper side. The exhaust device includes: an exhaust port disposed to open through a lower wall of the vacuum chamber on the other side of the stage; an exhaust chamber disposed under the vacuum chamber in communication with the exhaust port; and a vacuum pump connected to the exhaust chamber to evacuate the exhaust chamber.07-25-2013
20130206070DEPOSITION RING - A deposition ring is used on thin film deposition equipment which includes a chuck to hold a wafer. The deposition ring is arranged on the circumferential wall of the chuck and includes an inner ring and a protective member. The inner ring is adjacent to the circumferential wall. The protective member is jutting from the inner ring and has a circumferential surface, a barrier surface and a tip edge. The circumferential surface opposes the circumferential wall. The barrier surface and circumferential surface form an acute angle between them. The tip edge is formed between the circumferential surface and barrier surface. Through the protective member, the probability of adhering deposition particles to the back of the wafer is greatly reduced. The protective member is formed in a structure with a gradually increasing bottom, hence can provide higher stress resistant capability and overcome the easy fracturing problem in the conventional techniques.08-15-2013

Patent applications in class Work support

Patent applications in all subclasses Work support