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Multizone chamber

Subclass of:

118 - Coating apparatus

118715000 - GAS OR VAPOR DEPOSITION

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DocumentTitleDate
20090194027TWIN-TYPE COATING DEVICE WITH IMPROVED SEPARATING PLATE - The present invention refers to a coating device for coating of substrates comprising 08-06-2009
20090194026PROCESSING SYSTEM FOR FABRICATING COMPOUND NITRIDE SEMICONDUCTOR DEVICES - One embodiment of a processing system for fabricating compound nitride semiconductor devices comprises one or more processing chamber operable with form a compound nitride semiconductor layer on a substrate, a transfer chamber coupled with the processing chamber, a loadlock chamber coupled with the transfer chamber, and a load station coupled with the loadlock chamber, wherein the load station comprises a conveyor tray movable to convey a carrier plate loaded with one or more substrates into the loadlock chamber. Compared to a single chamber reactor, the multi-chamber processing system expands the potential complexity and variety of compound structures. Additionally, the system can achieve higher quality and yield by specialization of individual chambers for specific epitaxial growth processes. Throughput is increased by simultaneous processing in multiple chambers.08-06-2009
20080257261PLASMA PROCESSING APPARATUS - Embodiments of the present invention relate to plasma processing apparatus and methods of use thereof. In some embodiments, a plasma control magnet assembly includes a plurality of magnets arranged in a predetermined pattern that generate a magnetic field having a strength greater than 10 Gauss in a region proximate the assembly and less than 10 Gauss in a region remote from the assembly.10-23-2008
20130074771APPARATUS FOR FORMING ENERGY STORAGE AND PHOTOVOLTAIC DEVICES IN A LINEAR SYSTEM - A method and apparatus are provided for formation of a composite material on a substrate. The composite material includes carbon nanotubes and/or nanofibers, and composite intrinsic and doped silicon structures. In one embodiment, the substrates are in the form of an elongated sheet or web of material, and the apparatus includes supply and take-up rolls to support the web prior to and after formation of the composite materials. The web is guided through various processing chambers to form the composite materials. In another embodiment, the large scale substrates comprise discrete substrates. The discrete substrates are supported on a conveyor system or, alternatively, are handled by robots that route the substrates through the processing chambers to form the composite materials on the substrates. The composite materials are useful in the formation of energy storage devices and/or photovoltaic devices.03-28-2013
20130074770FILM DEPOSITION APPARATUS AND SUBSTRATE PROCESSING APPARATUS - A film deposition apparatus includes processing areas spaced part from each other in a circumferential direction and at least one separation gas nozzle arranged between the process areas, and separates the process areas from each other by supplying a separation gas from the separation gas nozzle. Moreover, a first ceiling surface is provided on the downstream side in a rotational direction of the turntable relative to the separation gas nozzle to form a narrow space between an upper surface of the turntable and a lower surface of the first ceiling surface. Furthermore, a second ceiling surface higher than the first ceiling surface is provided on the upstream side in the rotational direction of the turntable.03-28-2013
20130047922THERMAL BRIDGE FOR CHEMICAL VAPOR DEPOSITION REACTORS - A thermal bridge connecting first and second processing zones and a method for transferring a work piece from a first to a second processing zone by way of the thermal bridge are disclosed. A work piece, transportable from the first to the second processing zone on or above the thermal bridge, is maintained at a temperature between the temperatures of the processing zones. The thermal bridge member features a thermally conductive transport member for the work piece supported over an infrared transmissive member that is insulative to heat conduction and convection. The bridge insulative member extends between the first and second processing zones or between reactors. An infrared radiation beam source emits infrared radiation which passes through the bridge insulative member to the transport member, heating the member. In an alternate embodiment, the transport member may be heated directly. A liner member may be mounted above the bridge member to retain heat.02-28-2013
20080202420Semiconductor substrate processing apparatus with horizontally clustered vertical stacks - A substrate processing apparatus is described. The apparatus includes a substrate load lock chamber. A substrate transfer chamber is vacuum coupled to the substrate load lock chamber. A plurality of process chamber modules are vacuum coupled to the substrate transfer chamber. Each of the process chamber modules includes a process chamber coupled to a dedicated support system so that each process chamber module can be disconnected from the substrate transfer chamber without disrupting any of the other process chamber modules. The substrate transfer chamber includes one or more robotic arms for transferring flat-panel display substrates between the substrate load lock chamber and the plurality of process chamber modules.08-28-2008
20090078199Plasma enhanced chemical vapor deposition apparatus - A plasma enhanced chemical vapor deposition apparatus includes a receptacle having three chambers as an entering chamber, an intermediate chamber, and an exit chamber, four gates disposed before or behind or between the chambers for selectively closing the chambers and for allowing the chambers to be selectively vacuumed, one or more pumps coupled to each chamber for vacuuming each chamber, and for allowing the substrates to be treated with different processes or procedures in different chambers simultaneously and thus for allowing the time for treating the substrate to be greatly saved or economized, and thus for allowing the productivity to be greatly increased.03-26-2009
20110011340METHOD AND APPARATUS FOR CONVERTING PRECURSOR LAYERS INTO PHOTOVOLTAIC ABSORBERS - The present invention relates to method and apparatus for preparing thin films of semiconductor films for radiation detector and photovoltaic applications. In one aspect, the present invention includes a series of chambers between the inlet and the outlet, with each chamber having a gap that allows a substrate to pass therethrough, and which is temperature controlled, thereby allowing each chamber to maintain a different temperature, and the substrate to be annealed based upon a predetermined temperature profile by efficiently moving through the series of chambers. In another aspect, each of the chambers opens and closes, and creates a seal when in the closed position during which time annealing takes place within the gap of the chamber. In a further aspect, the present invention provides a method of forming a Group IBIIIAVIA compound layer on a surface of a flexible roll.01-20-2011
20130061804SUBSTRATE PROCESSING APPARATUS AND FILM DEPOSITION APPARATUS - A substrate processing apparatus includes a processing chamber; process areas each of which supplies a reaction gas; a turntable that rotates to cause a substrate to pass through the process areas; a gas nozzle provided in one of the process areas; a separating area that supplies a separation gas to separate atmospheres of the process areas; and a cover part configured to cover the gas nozzle and cause the reaction gas supplied from the gas nozzle to remain around the gas nozzle. The cover part includes an upstream side wall, a downstream side wall, and an upper wall. The cover part also includes a guide surface configured to guide the separation gas to flow over a lower part of the upstream side wall to a space above the upper wall. The distance between the gas nozzle and the upstream side wall is greater than or equal to 03-14-2013
20090013932SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus of the present invention includes a holding means for rotatably holding a substrate; a coating solution supply nozzle for supplying a coating solution onto a front surface of the substrate to be processed held by the holding means; a treatment chamber housing the holding means and the coating solution supply nozzle; a cooling means for cooling the substrate before the coating solution is supplied to the substrate, to a predetermined temperature; a heating means for heating the substrate coated with the coating solution to a predetermined temperature; and a transfer means for transferring the substrate between the treatment chamber, the cooling means and the heating means, wherein the treatment chamber, the cooling means and the heating means are partitioned from an ambient air, and wherein at least the treatment chamber is connected to a gas supply mechanism having a supply source of a gas having a kinematic viscosity coefficient higher than that of air and kept at a predetermined concentration of the gas.01-15-2009
20120234240GRAPHENE SYNTHESIS CHAMBER AND METHOD OF SYNTHESIZING GRAPHENE BY USING THE SAME - A graphene synthesis chamber includes: a chamber case in which a substrate including a metal thin film is placed; a gas supply unit which supplies at least one gas comprising a carbon gas into an inner space of the chamber case; a main heating unit which emits at least one light to the inner space to heat the substrate; and at least one auxiliary heating unit which absorbs the at least one light and emits radiant heat toward the substrate.09-20-2012
20100089318Remote Plasma Apparatus for Manufacturing Solar Cells - A continuous thin film deposition apparatus that includes a remote plasma source. The source forms a plasma from a precursor and delivers a modified form of the plasma as a charge-depleted deposition medium to a deposition apparatus for formation of a thin film material. The thin film may be formed on a continuous web or other moving substrate. The charge-depleted deposition medium may be formed within the remote plasma source and delivered to an operatively coupled deposition apparatus or the charge-depleted deposition medium may form as the plasma exits the remote plasma source. The initial plasma is formed within the remote plasma source and includes a distribution of charged species (electrons and ions). The charge-depleted deposition medium contains a reduced concentration of the charged species and permits deposition of thin film materials having lower defect concentration. In one embodiment, the thin film material is a solar material and the lower defect concentration provides a higher solar conversion efficiency.04-15-2010
20120285380CONSTANT VOLUME CLOSURE VALVE FOR VAPOR PHASE DEPOSITION SOURCE - A vapor-phase deposition source including a vessel equipped with two zones. The first zone is for the production of vapor. It is equipped with a receptacle for the material and element for heating the material placed in the receptacle. The second is a diffusion zone including a vessel communicating with the production zone and equipped with at least one opening so that the vapor-phase material is transmitted towards the exterior of the vessel through the opening. The source is characterized in that it includes elements for closing the orifice and elements for moving the closing elements between an active closed position and an orifice open position without changing the volume of the diffusion zone.11-15-2012
20110277689SUBSTRATE PROCESSING CHAMBER WITH OFF-CENTER GAS DELIVERY FUNNEL - Methods and apparatus for processing substrates are disclosed herein. The process chamber includes a chamber body, a substrate support pedestal, a pump port and a gas injection funnel. The chamber body has an inner volume and the substrate support pedestal is disposed in the inner volume of the chamber body. The pump port is coupled to the inner volume and is disposed off-center from a central axis of the substrate support pedestal. The pump port provides azimuthally non-uniform pumping proximate to a surface of the substrate support pedestal and creates localized regions of high pressure and low pressure within the inner volume during use. The gas injection funnel is disposed in a ceiling of the chamber body and opposite the substrate support pedestal. The gas injection funnel is offset from the central axis of the substrate support pedestal and is disposed in a region of low pressure.11-17-2011
20100031885Reactor For Growing Crystals - The present invention relates to a reactor (02-11-2010
20110214610MANUFACTURING METHOD AND MANUFACTURING APPARATUS OF SEMICONDUCTOR SUBSTRATE - It is an object to provide a homogeneous semiconductor substrate in which defective bonding is reduced. Such a semiconductor substrate can be formed by the steps of: disposing a first substrate in a substrate bonding chamber which includes a substrate supporting base where a plurality of openings is provided, substrate supporting mechanisms provided in the plurality of openings, and raising and lowering mechanisms which raise and lower the substrate supporting mechanisms; disposing a second substrate over the first substrate so as not to be in contact with the first substrate; and bonding the first substrate to the second substrate by using the raising and lowering mechanisms to raise the substrate supporting mechanisms.09-08-2011
20120024228APPARATUS FOR FORMING THIN FILM - A thin film forming apparatus according to the embodiment includes a plurality of vapor deposition sources respectively separated from each other, a plurality of nozzle bodies connected to upper portions of the respective vapor deposition sources, and a plurality of nozzles connected to upper portions of the respective nozzle bodies. A nozzle hole of each of the nozzles is formed on a same vapor deposition line. Thus, according to the embodiment, the first organic material and the second organic material respectively sprayed through a first nozzle hole and a second nozzle hole can be uniformly mixed by disposing the first nozzle hole and the second nozzle on the same vapor deposition line.02-02-2012
20100083900ATOMIC LAYER DEPOSITION APPARATUS - An atomic layer deposition apparatus is provided. The atomic layer deposition apparatus includes a reaction chamber, a first heater, a second heater, a first gas supply system, a second gas supply system and a vacuum system. The vacuum system is connected to the reaction chamber. The reaction chamber includes a preheating chamber and a plating chamber connected to the preheating chamber. The first heater is for heating the preheating chamber. The first gas supply system is connected to the preheating chamber. The second heater is for heating the plating chamber. The second gas supply system is connected to the plating chamber.04-08-2010
20080276867TRANSFER CHAMBER WITH VACUUM EXTENSION FOR SHUTTER DISKS - The present invention relates to a cluster tool for processing semiconductor substrates. One embodiment of the present invention provides a mainframe for a cluster tool comprising a transfer chamber having a substrate transferring robot disposed therein. The substrate transferring robot is configured to shuttle substrates among one or more processing chambers directly or indirectly connected to the transfer chamber. The mainframe further comprises a shutter disk shelf configured to store one or more shutter disks to be used by the one or more processing chambers, wherein the shutter disk shelf is accessible to the substrate transferring robot so that the substrate transferring robot can transfer the one or more shutter disks between the shutter disk shelf and the one or more processing chambers directly or indirectly connected to the transfer chamber.11-13-2008
20090188431Substrate processing apparatus and method for manufacturing a semiconductor device - A CVD device has a reaction furnace (07-30-2009
20090139452SEPARATING DEVICE FOR PROCESS CHAMBERS OF VACUUM COATING INSTALLATION AND VACUUM COATING INSTALLATION - A separating device for process chambers arranged one after the other in a vacuum coating installation for coating two-dimensional substrates comprises a separating element which can be fitted between two process chambers transversely in relation to the transporting direction of the substrates. The element comprises a passage for the substrate that is arranged in the region of the transporting plane of the substrate and formed by at least one through-opening provided in the separating element, and includes at least one closure, optionally closing or opening the passage. An intermediate chamber formed by intermediate chamber outer walls is also provided and the separating element is arranged inside the intermediate chamber and the intermediate chamber is subdivided into two intermediate chamber segments. In this configuration, the separating device forms a chamber of its own, arranged between two neighbouring process chambers.06-04-2009
20090025640FORMATION OF CIGS ABSORBER LAYER MATERIALS USING ATOMIC LAYER DEPOSITION AND HIGH THROUGHPUT SURFACE TREATMENT - An absorber layer may be formed on a substrate using atomic layer deposition reactions. An absorber layer containing elements of groups IB, IIIA and VIB may be formed by placing a substrate in a treatment chamber and performing atomic layer deposition of a group IB element and/or one or more group IIIA elements from separate sources onto a substrate to form a film. A group VIA element is then incorporated into the film and annealed to form the absorber layer. The absorber layer may be greater than about 25 nm thick. The substrate may be coiled into one or more coils in such a way that adjacent turns of the coils do not touch one another. The coiled substrate may be placed in a treatment chamber where substantially an entire surface of the one or more coiled substrates may be treated by an atomic layer deposition process. One or more group IB elements and/or one or more group IIIA elements may be deposited onto the substrate in a stoichiometrically controlled ratio by atomic layer deposition using one or more self limiting reactions.01-29-2009
20120067284APPARATUS - An apparatus for carrying out atomic layer deposition onto a surface of a substrate by exposing the surface of the substrate to alternate starting material surface reactions, the apparatus including two or more low-pressure chambers, two or more separate reaction chambers arranged to be placed inside the low-pressure chambers, and at least one starting material feed system common to two or more low-pressure chambers for carrying out atomic layer deposition. The apparatus includes at least one loading device arranged to load and unload substrates to/from the reaction chamber and further to load and unload the reaction chambers to/from the low-pressure chambers.03-22-2012
20090084316APPARATUS FOR MANUFACTURING FLAT-PANEL DISPLAY - Disclosed herein is a flat panel display (FPD) manufacturing apparatus for performing a desired process for a substrate positioned in a chamber after establishing a vacuum atmosphere in the chamber. The vacuum chamber is divided into a chamber body and an upper cover to ensure easy opening/closing operations of the upper cover.04-02-2009
20110126761CVD REACTOR WITH ENERGY EFFICIENT THERMAL-RADIATION SHIELD - A Siemens type CVD reactor device is provided. One or more radiation shields are disposed between a rod filament and a cooled wall in the reactor. The radiation shield absorbs radiant heat emanating from the heated polysilicon rod during the CVD process, gets heated above 400° C., re-radiate the absorbed heat toward both of the polysilicon rod and the cooled wall, so as to provide thermal shielding effect to the cooled wall. The net energy loss of the polysilicon rod is reduced as much as the amount of energy emitted toward the polysilicon rod from the radiation shield, such that considerable amount of electrical energy of the CVD reactor is reduced and saved. The energy reduction rate goes up much higher if using multiple layered radiation shields, low shielding emissivity, and low thermal conductivity together. The purity of the manufactured polysilicon can be maintained by using thermal shielding material that is stable in a high temperature such as graphite, silicon carbide-coated graphite, and silicon.06-02-2011
20090078200APPARATUS FOR MANUFACTURING FLAT-PANEL DISPLAY - Disclosed herein is a flat panel display (FPD) manufacturing apparatus for performing a desired process for a substrate positioned in a chamber after establishing a vacuum atmosphere in the chamber. The vacuum chamber is divided into a chamber body and an upper cover to ensure easy opening/closing operations of the upper cover.03-26-2009
20100236478VACUUM PROCESSING SYSTEM - A vacuum processing system includes CVD processing chambers to perform a CVD process on a wafer W under a vacuum, and a transfer chamber having loading/unloading holes to load/unload the wafer W and being connected to the CVD processing chambers via gate valves G capable of opening/closing the loading/unloading holes. The transfer chamber includes a transfer mechanism to load/unload the wafer W to/from the CVD processing chambers via the loading/unloading holes and the inside of the transfer chamber is maintained in a vacuum state. The vacuum processing system also includes purge-gas discharge members provided near the loading/unloading holes. In a state where the transfer chamber and any one of the processing chambers are communicated with each other by opening of the gate valve G, the purge-gas discharge member discharges a purge gas to the communicated CVD processing chamber via the loading/unloading hole.09-23-2010
20110056432CONTACT BARRIER LAYER DEPOSITION PROCESS - A method for depositing a barrier layer onto a substrate is disclosed. A layer of titanium (Ti) is deposited onto the substrate using an ionized metal plasma (IMP) physical vapor deposition process. The IMP process includes: generating gaseous ions, accelerating the gaseous ions towards a titanium target, sputtering the titanium atoms from the titanium target with the gaseous ions, ionizing the titanium atoms using a plasma, and depositing the ionized titanium atoms onto the substrate to form the layer of Ti. A first layer of titanium nitride (TiN) is deposited onto the layer of Ti using a metal organic chemical vapor deposition (MOCVD) process. A second layer of TiN is deposited onto the first layer of TiN using a thermal chemical vapor deposition process. The newly completed barrier layer is annealed in the presence of nitrogen at a temperature of between about 500° C. to about 750° C.03-10-2011
20090320755ARRANGEMENT FOR COATING A CRYSTALLINE SILICON SOLAR CELL WITH AN ANTIREFLECTION/PASSIVATION LAYER - In the plasma pretreatment a substrate, preferably a silicon solar cell, is transported into a pretreatment chamber (12-31-2009
20090308317CARRIER WITH DEPOSITION SHIELD - The peeling-off of a deposited film caused by a carrier is restrained, and the exchange period of the carrier is prolonged. In a carrier 12-17-2009
20100037820Vapor Deposition Reactor - A vapor deposition reactor includes a reaction module includes a first injection unit for injecting a first material onto a substrate. At least one second injection unit is placed within the first injection unit for injecting a second material onto the substrate. The substrate passes the reaction module through a relative motion between the substrate and the reaction module. The vapor deposition reactor advantageously injects a plurality of materials onto the substrate while the substrate passes the reaction module without exposing the substrate to the atmosphere in a chamber.02-18-2010
20120125258Extended Reactor Assembly with Multiple Sections for Performing Atomic Layer Deposition on Large Substrate - An elongated reactor assembly in a deposition device for performing atomic layer deposition (ALD) on a large substrate. The elongated reactor assembly includes one or more injectors and/or radical reactors. Each injector or radical reactor injects a gas or radicals onto the substrate as the substrate passes the injector or radical reactor as part of the ALD process. Each injector or radical reactor includes a plurality of sections where at least two sections have different cross sectional configurations. By providing different sections in the injector or radical reactor, the injector or radical reactor may inject the gas or the radicals more uniformly over the substrate. Each injector or radical reactor may include more than one outlet for discharging excess gas or radicals outside the deposition device.05-24-2012
20090126631CHEMICAL VAPOR DEPOSITION REACTOR HAVING MULTIPLE INLETS - A chemical vapor deposition reactor has a wafer carrier which cooperates with a chamber of the reactor to facilitate laminar flow of reaction gas within the chamber and a plurality of injectors configured in flow controllable zones so as to mitigate depletion.05-21-2009
20080314317SHOWERHEAD DESIGN WITH PRECURSOR PRE-MIXING - A method and apparatus that may be utilized in deposition processes, such as hydride vapor phase epitaxial (HVPE) deposition of metal nitride films, are provided. A first set of passages may introduce a metal containing precursor gas. A second set of passages may provide a nitrogen-containing precursor gas. The first and second sets of passages may be interspersed in an effort to separate the metal containing precursor gas and nitrogen-containing precursor gas until they reach a substrate. An inert gas may also be flowed down through the passages to help keep separation and limit reaction at or near the passages, thereby preventing unwanted deposition on the passages.12-25-2008
20110041765FILM DEPOSITION DEVICE - The film deposition device includes a CVD film forming room disposed on a travel path of a substrate and having a function of performing the film deposition on a substrate by CVD, a treatment room disposed upstream or downstream of the CVD film forming room on the travel path and having a function of performing a predetermined treatment on the substrate, and a differential room disposed between and communicating with the CVD film forming room and the treatment room. The differential room includes a evacuation unit, a gas introducing unit for introducing at least one of a gas to be supplied to both of the CVD film forming room and the treatment room, and an inert gas, and a controller which controls the evacuation unit and the gas introducing unit to keep the differential room at a higher pressure than the CVD film forming room and the treatment room.02-24-2011
20120031333VERTICAL INLINE CVD SYSTEM - The present invention generally relates to a vertical CVD system having a processing chamber that is capable of processing multiple substrates. The multiple substrates are disposed on opposite sides of the processing source within the processing chamber, yet the processing environments are not isolated from each other. The processing source is a horizontally centered vertical plasma generator that permits multiple substrates to be processed simultaneously on either side of the plasma generator, yet independent of each other. The system is arranged as a twin system whereby two identical processing lines, each with their own processing chamber, are arranged adjacent to each other. Multiple robots are used to load and unload the substrates from the processing system. Each robot can access both processing lines within the system.02-09-2012
20120199067FILM-FORMING APPARATUS - An atmosphere in a reaction pipe is replaced by supplying a purge gas into the reaction pipe from a slit of a third gas injector when process gases are switched, by providing the third gas injector including the slit along a length direction of the reaction pipe in addition to first and second gas injectors including gas ejection holes for respectively supplying process gases, such as s Zr-based gas and an O08-09-2012
20110120374System and Method for Mitigating Oxide Growth in a Gate Dielectric - Oxide growth of a gate dielectric layer that occurs between processes used in the fabrication of a gate dielectric structure can be reduced. The reduction in oxide growth can be achieved by maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth of the gate dielectric layer between at least two sequential process steps used in the fabrication the gate dielectric structure. Maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth also improves the uniformity of nitrogen implanted in the gate dielectric.05-26-2011
20110132261System and Method for Depositing a Material on a Substrate - A method and apparatus for depositing a film on a substrate includes introducing a material and a carrier gas into a heated chamber. The material may be a semiconductor material, such as a cadmium chalcogenide. A resulting mixture of vapor and carrier gas containing no unvaporized material is provided. The mixture of vapor and carrier gas are remixed to achieve a uniform vapor/carrier gas composition, which is directed toward a surface of a substrate, such as a glass substrate, where the vapor is deposited as a uniform film.06-09-2011
20110132260MANUFACTURING APPARATUS - A manufacturing apparatus is provided, which can improve a utilization efficiency of an evaporation material, reduce manufacturing costs of a light emitting device having an organic light emitting element, and shorten manufacturing time necessary to manufacture a light emitting device. According to the present invention, a multi-chamber manufacturing apparatus having plural film forming chambers includes a first film forming chamber for subjecting a first substrate to evaporation and a second film forming chamber for subjecting a second substrate to evaporation. In each film forming chamber, plural organic compound layers are laminated, thereby improving the throughput. Further, it is possible that the respective substrates in the plural film forming chambers are subjected to evaporation in the same manner in parallel, while another film forming chamber undergoes cleaning.06-09-2011
20090308316Transfer apparatus and organic deposition device with the same - A transfer apparatus and an organic deposition device have the same capability of increasing stability under high-temperature and high-vacuum environments. The organic deposition device includes: a vacuum chamber; a stage installed in the vacuum chamber and having a substrate seated thereon; a deposition source for evaporating an organic toward the substrate; a process utility line coupled to the deposition source and drawn out to the exterior of the vacuum chamber; and a transfer apparatus for moving the deposition source in a direction parallel to a direction of the substrate, and having the process utility line installed therein.12-17-2009
20080216744Apparatus for Manufacturing Magnetic Recording Disk, and In-Line Type Substrate Processing Apparatus - An apparatus for manufacturing a magnetic recording disk includes a magnetic-film deposition chamber in which a magnetic film for a recording layer is deposited on a substrate; a lubricant-layer preparation chamber in which a lubricant layer is prepared on the substrate in vacuum; and a cleaning chamber in which the substrate is cleaned in vacuum after the magnetic-film deposition in the magnetic-film chamber and before the lubricant-layer preparation in the lubricant-layer chamber. The apparatus may further include a transfer system that transfers the substrate from the cleaning chamber to the lubricant-layer preparation chamber without exposing the substrate to the atmosphere.09-11-2008
20120145079LOADLOCK BATCH OZONE CURE - A substrate processing chamber for processing a plurality of wafers in batch mode. In one embodiment the chamber includes a vertically aligned housing having first and second processing areas separated by an internal divider, the first processing area positioned directly over the second processing area; a multi-zone heater operatively coupled to the housing to heat the first and second processing areas independent of each other; a wafer transport adapted to hold a plurality of wafers within the processing chamber and move vertically between the first and second processing areas; a gas distribution system adapted to introduce ozone into the second area and steam into the first processing area; and a gas exhaust system configured to exhaust gases introduced into the first and second processing areas.06-14-2012
20110011339COATING APPARATUS - A coating apparatus includes a chamber device and a transporting device. The chamber device defines two separated coating chambers, two coating channels, which are alternately arranged, two coating slots communicating the coating chambers with the coating channels respectively, and a transportation channel extending to intersect the coating chambers and the coating channels and communicate with the coating channels. The transporting device includes a carrying board for carrying a substrate to be coated and an a driver for driving the carrying board to move along the transportation channel and to rotate the carrying board into one of the coating channels so that the substrate faces and aligns a corresponding coating chamber via a corresponding coating slot.01-20-2011
20120000423HDP-CVD SYSTEM - An HDP-CVD system is described, including an HDP-CVD chamber for depositing a material on a wafer, and a pre-heating chamber disposed outside of the HDP-CVD chamber to pre-heat the wafer, before the wafer is loaded in the HDP-CVD chamber, to a temperature higher than room temperature and required in the deposition step to be conducted in the HDP-CVD chamber. The pre-heating chamber is equipped with a heating lamp for the pre-heating. The wafer has been formed with a trench before being pre-heated.01-05-2012
20110100296FILM FORMATION APPARATUS - A film formation apparatus includes: a film forming chamber in which a desired film is formed on a substrate in a vacuum; a loading-ejecting chamber fixed to the film forming chamber with a first opening-closing section interposed therebetween, being capable of reducing a pressure inside the loading-ejecting chamber so as to form a vacuum atmosphere; a second opening-closing section provided at a face opposite to the face of the loading-ejecting chamber on which the first opening-closing section is provided; and a carrier holding the substrate so that a film formation face of the substrate is substantially parallel to a direction of gravitational force, wherein the carrier or the substrate passes through the second opening-closing section, and is transported to the loading-ejecting chamber and is transported from the loading-ejecting chamber; a plurality of carriers is disposed in the loading-ejecting chamber in parallel to each other; the plurality of carriers is transported in parallel between the loading-ejecting chamber and the film forming chamber; and a film is simultaneously formed on a plurality of substrates that is held by the plurality of carriers in the film forming chamber.05-05-2011
20110155057PLASMA PROCESS APPARATUS - A plasma process apparatus for processing a substrate by using plasma including a vacuum chamber in which the processing of the substrate is performed, a turntable inside the vacuum chamber, the turntable having at least one substrate receiving area, a rotation mechanism rotating the turntable, a gas supplying part supplying plasma generation gas to the substrate receiving area, a main plasma generating part ionizing the plasma generation gas, being provided in a position opposite to a passing area of the substrate receiving area, and extending in a rod-like manner from a center portion of the turntable to an outer circumferential portion of the turntable, an auxiliary plasma generating part compensating for insufficient plasma of the main plasma generating part, the auxiliary plasma generating part being separated from the main plasma generating part in a circumferential direction of the vacuum chamber, and an evacuating part evacuating the vacuum chamber.06-30-2011
20110155056FILM DEPOSITION APPARATUS - A film deposition apparatus has a vacuum chamber in which a turntable placing plural substrates is rotated, the plural substrates come into contact with plural reaction gases supplied to plural process areas and thin films are deposited on surfaces of the plural substrates, and has plural reaction gas supplying portions for supplying the plural processing gases, a separation gas supplying portion for supplying a separation gas and an evacuation mechanism for ejecting the plural processing gases and the separation gas, wherein the plural process areas includes a first process area for causing a first reaction gas to adsorb on the surfaces of the plural substrates, and a second process area, having an area larger than the first process area, for causing the first reaction gas having adsorbed the surfaces of the plural substrates and a second reaction gas to react, and depositing the films on the surfaces of the plural substrates.06-30-2011
20120006265ATOMIC LAYER DEPOSITION APPARATUS - A method and apparatus for atomic layer deposition (ALD) is described. In one embodiment, an apparatus comprises a vacuum chamber body having a contiguous internal volume comprised of a first deposition region spaced-apart from a second deposition region, the chamber body having a feature operable to minimize intermixing of gases between the first and the second deposition regions, a first gas port formed in the chamber body and positioned to pulse gas preferentially to the first deposition region to enable a first deposition process to be performed in the first deposition region, and a second gas port formed in the chamber body and positioned to pulse gas preferentially to the second deposition region to enable a second deposition process to be performed in the second deposition region is provided.01-12-2012
20120006266SPUTTERING APPARATUS, METHOD OF OPERATING THE SAME, AND METHOD OF MANUFACTURING SUBSTRATE USING THE SAME - A sputtering apparatus includes a susceptor for receiving a substrate, and a first target device disposed to be opposite to a center region of a substrate and at least second and third target devices disposed to be opposite to peripheral regions of the substrate, wherein the second and third target devices are rotatable.01-12-2012
20120152168SEMICONDUCTOR DEVICE HAVING OXIDIZED METAL FILM AND MANUFACTURE METHOD OF THE SAME - A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, and oxidizing at least part of the metal film with oxidizing species remaining in the insulating film.06-21-2012
20120247389APPARATUS FOR MANUFACTURING THIN FILM STACKED MEMBER - Provided is an apparatus for manufacturing a thin film stacked member capable of improving the quality of the thin film stacked member by decreasing creases, heat wrinkles, and tension wrinkles in the film through wrinkle smoothing-out. An apparatus for manufacturing a thin film stacked member transports a strip-shape flexible substrate in a horizontal direction with a width direction of the strip-shape flexible substrate as the vertical direction. The strip-shape flexible substrate is transported to a film deposition portion provided in a transport path of the strip-shape flexible substrate. A thin film is stacked on a surface of the strip-shape flexible substrate by means of a film deposition apparatus provided in the film deposition portion. A temperature-raising portion 10-04-2012
20100206229VAPOR DEPOSITION REACTOR SYSTEM - Embodiments of the invention generally relate to apparatuses for chemical vapor deposition (CVD) processes. In one embodiment, a CVD reactor is provided which includes a reactor lid assembly disposed on a reactor body and containing a first showerhead assembly, an isolator assembly, a second showerhead assembly, and an exhaust assembly consecutively and linearly disposed next to each other on a lid support. The CVD reactor further contains first and second faceplates disposed on opposite ends of the reactor body, wherein the first showerhead assembly is disposed between the first faceplate and the isolator assembly and the exhaust assembly is disposed between the second showerhead assembly and the second faceplate. The reactor body has a wafer carrier disposed on a wafer carrier track and a lamp assembly disposed below the wafer carrier track and containing a plurality of lamps which may be utilized to heat wafers disposed on the wafer carrier.08-19-2010
20120210937SUBSTRATE PROCESSING APPARATUS USING A BATCH PROCESSING CHAMBER - Aspects of the invention include a method and apparatus for processing a substrate using a multi-chamber processing system (e.g., a cluster tool) adapted to process substrates in one or more batch and/or single substrate processing chambers to increase the system throughput.08-23-2012
20120160166Reliant Thermal Barrier Coating System and Related Apparatus and Methods of Making the Same - A method and apparatus for forming a thermal barrier coating system in communication with at least a portion of at least one substrate. The method includes: depositing a first bond coat on at least a portion of at least one substrate; depositing a first thermal barrier coat disposed on the bond coat; whereby the deposition occurs in one or more chambers to form the thermal barrier coating system; and wherein the deposition of the first bond coat (or subsequent bond coats) and the deposition of the first thermal barrier coat (or subsequent thermal barrier coats) is performed without out-of chamber handling of the thermal barrier coating system.06-28-2012
20110180000PLASMA PROCESSING APPARATUS - A plasma processing apparatus is described and which includes a chamber having at least two processing stations which are separated by a wall. At least one channel is formed in the wall, and wherein the channel has a width to length ratio of less than about 1:3.07-28-2011
20110179999SYSTEMS AND METHODS FOR SEALING IN SITE-ISOLATED REACTORS - Substrate processing systems and methods are described for site-isolated processing of substrates. The processing systems include numerous site-isolated reactors (SIRs). The processing systems include a reactor block having a cell array that includes numerous SIRs. A sleeve is coupled to an interior of each of the SIRs. The sleeve includes a compliance device configured to dynamically control a vertical position of the sleeve in the SIR. A sealing system is configured to provide a seal between a region of a substrate and the interior of each of the SIRs. The processing system can include numerous modules that comprise one or more site-isolated reactors (SIRs) configured for one or more of molecular self-assembly and combinatorial processing of substrates.07-28-2011
20120210936SYSTEMS AND METHODS FOR MUTLI-CHAMBER PHOTOVOLTAIC MODULE PROCESSING - A system includes input and output sets processing chambers. The processing chambers of each of the input set and the output set are fluidly coupled and linearly aligned with each other along corresponding input and output directions. The processing chambers process and move a device between the processing chambers along corresponding input and output directions. The processing chambers of the input set separately process the device when the device is located in each of the processing chambers of the input set. The processing chambers of the output set separately process the device when the device is located in each of the processing chambers of the output set.08-23-2012
20120222615FILM DEPOSITION APPARATUS - A film deposition apparatus includes a first turntable including at least ten substrate receiving areas that receive corresponding 300 mm substrates; a first reaction gas supplying portion arranged in a first area inside the chamber to supply a first reaction gas; a second reaction gas supplying portion arranged in a second area away from the first reaction gas supplying portion along the rotation direction of the first turntable to supply a second reaction gas; and a separation area arranged between the first and the second areas. The separation area includes a separation gas supplying portion that supplies a separation gas that separates the first reaction and the second reaction gases, and a ceiling surface having a height so that a pressure in a space between the ceiling surface and the first turntable is higher with the separation gas than pressures in the first and the second areas.09-06-2012
20090020072Chemical solution vaporizing tank and chemical solution treating system - An object is to suppress differences in concentration between processing gases supplied to a plurality of works in a chemical solution vaporizing tank. The chemical solution vaporizing tank includes a tank body having a plurality of vaporizing chambers formed by laterally and airtightly partitioning an internal space of the tank body, a chemical solution passage located under a liquid level in each vaporizing chamber and formed at each partition member for passing the chemical solution between the vaporizing chambers, and a gas passage located above the liquid level in each vaporizing chamber and formed at the partition member to communicate the vaporizing chambers with each other for uniformizing pressures in the respective vaporizing chambers. A quantity of the channel layer in each vaporizing chamber is controlled by managing, e.g., the liquid level.01-22-2009
20100180819FILM-FORMING APPARATUS - In a film-forming apparatus in which two or more gases are used, a uniform film is formed. In a film-forming apparatus provided with a film-forming chamber and a shower head, the shower head is provided with a material gas diffusion chamber and a reactive gas diffusion chamber. A gas passage which communicates the material gas diffusion chamber and a material gas introduction pipe is constituted into multi-stages of one stage or more. Each stage has a gas passage represented by 2n-1 (where n is the number of stages). The first-stage gas passage has connected to the center thereof the material gas introduction pipe. Each of second-stage and subsequent-stage gas passages has connected to the center thereof connection holes which are provided on both ends of the previous-stage gas passages so as to be in communication with the previous-stage gas passages. Each of the final-stage gas passages is connected to the material gas diffusion chamber by connection holes formed on both ends of each of the gas passages.07-22-2010
20120266819SEMICONDUCTOR SUBSTRATE PROCESSING SYSTEM - Apparatus for processing substrates are provided. In some embodiments, a processing system may include a first transfer chamber and a first process chamber coupled to the transfer chamber, the process chamber further comprising a substrate support to support a processing surface of a substrate within the process chamber, an injector disposed to a first side of the substrate support and having a first flow path to provide a first process gas and a second flow path to provide a second process gas independent of the first process gas, wherein the injector provides the first and second process gases across the processing surface of the substrate, a showerhead disposed above the substrate support to provide the first process gas to the processing surface, and an exhaust port disposed to a second side of the substrate support, opposite the injector, to exhaust the first and second process gases from the process chamber.10-25-2012
20100186669ATOMIC LAYER DEPOSITION APPARATUS - An atomic deposition apparatus is provided for simultaneously loading/unloading a plurality of substrates. The atomic deposition apparatus which may load/unload the plurality of substrates when transmitting the plurality of substrates to a process module, includes a loading/unloading module for loading/unloading a substrate, a process module including a plurality of process chambers for simultaneously receiving a plurality of substrates and performing a deposition process, each of the plurality of process chambers including a gas spraying unit having an exhaust portion by which an exhaust gas is drawn in from inside the process chamber and the drawn in gas is exhausted above the process chamber, and a transfer module including a transfer robot provided between the loading/unloading module and the process module, the transfer robot being adopted for simultaneously holding the plurality of substrates while transporting the substrate.07-29-2010
20110265720GAS DEPOSITION REACTOR - A reactor is provided for a gas deposition method, in which method the surface of a substrate is subjected to alternate starting material surface reactions. The reactor includes a first chamber, a second chamber mounted inside the first chamber, and heating means for heating the first chamber. The reactor also includes one or more heat transfer elements for equalising temperature differences inside the first chamber.11-03-2011
20120090545VAPOR BASED COMBINATORIAL PROCESSING - A combinatorial processing chamber and method are provided. In the method a fluid volume flows over a surface of a substrate with differing portions of the fluid volume having different constituent components to concurrently expose segregated regions of the substrate to a mixture of the constituent components that differ from constituent components to which adjacent regions are exposed. Differently processed segregated regions are generated through the multiple flowings.04-19-2012
20120090544THIN FILM DEPOSITION APPARATUS FOR CONTINUOUS DEPOSITION, AND MASK UNIT AND CRUCIBLE UNIT INCLUDED IN THIN FILM DEPOSITION APPARATUS - A thin film deposition apparatus for performing continuous deposition, and a mask unit and a crucible unit that are included in the thin film deposition apparatus. A thin film deposition apparatus includes a moving unit configured to move a substrate as a deposition target; a mask unit configured to selectively pass vapor of a deposition source toward the substrate; and a crucible unit including a plurality of crucibles accommodating the deposition source and proceeding along a circulation path passing through the mask unit.04-19-2012
20120090543THIN FILM DEPOSITING APPARATUS - Provided is a thin film depositing apparatus. The thin film depositing apparatus includes: a loading chamber loading a plurality of substrates; a first process chamber connected to the loading chamber and including a plurality of sputter guns inducing a first plasma on the plurality of substrates; a buffer chamber connected to the other side of the first process chamber facing the loading chamber; and a substrate transfer module simultaneously passing the plurality of substrates between the plurality of sputter guns during a process using the first plasma and transferring the plurality of substrates from the first process chamber to the buffer chamber.04-19-2012
20120137973SUBSTRATE PROCESSING APPARATUS AND FILM FORMING SYSTEM - According to one embodiment, there is provided a substrate processing apparatus which performs a preprocess of a substrate to which a film forming process is performed by a CVD device. The substrate processing apparatus comprises a substrate process chamber, a heating unit, an oxidation process unit, and a coating process unit. In the substrate process chamber, a substrate stage is disposed. The substrate stage holds the substrate. The heating unit heats the substrate in the substrate process chamber via the substrate stage. The oxidation process unit oxidizes a surface of the substrate heated by the heating unit in the substrate process chamber. The coating process unit coats the surface of the substrate oxidized by the oxidation process unit with an organic solvent in the substrate process chamber.06-07-2012
20130019801FILM DEPOSITION APPARATUS AND SUBSTRATE PROCESSING APPARATUS - A film deposition apparatus includes a processing chamber; a rotary table; process regions provided in the processing chamber and arranged apart from each other in the rotational direction of the rotary table; reaction gas supplying units configured to supply reaction gases of different types to the corresponding process regions; separation regions provided between the process regions; separation gas supplying units configured to supply a separation gas to the separation regions to separate the atmospheres of the process regions; and an exhaust path forming part having openings at positions corresponding to the process regions and configured to form exhaust paths for separately guiding the atmospheres of the process regions from the openings to the corresponding exhaust ports of the processing chamber for exhausting atmospheres of the process regions. The exhaust path forming part is configured such that positions of the openings in the rotational direction are changeable.01-24-2013
20120240854APPARATUS FOR PRODUCING LAMINATED BODY - An apparatus is provided that can stably produce a laminated body including a vapor-deposited polymer film having a predetermined composition and thickness on a film substrate. The apparatus includes: a film substrate supply means 09-27-2012
20080236488Substrate Processing Apparatus and Manufacturing Method for a Semiconductor Device - The sizes required for maintenance are reduced and an occupying floor area is reduced. The substrate processing apparatus contains a load lock chamber 10-02-2008
20110232571FILM FORMATION APPARATUS, METHOD FOR FORMING FILM, AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE - The present invention relates to a film formation apparatus including a first transfer chamber having a roller for sending a substrate, a film formation chamber having a discharging electrode, a buffer chamber provided between the transfer chamber and the film formation chamber or between the film formation chambers, a slit provided in a portion where the substrate comes in and out in the buffer chamber, and a second transfer chamber having a roller for rewinding the substrate. The slit is provided with at least one touch roller, and the touch roller is in contact with a film formation surface of the substrate. In addition, the present invention also relates to a method for forming a film and a method for manufacturing a photoelectric conversion device that are performed by using such a film formation apparatus.09-29-2011
20110232570SYSTEM AND METHOD FOR DEPOSITING A MATERIAL ON A SUBSTRATE - A method and apparatus for depositing a film on a substrate includes introducing a material and a carrier gas into a heated chamber. The material may be a semiconductor material, such as a cadmium chalcogenide. A resulting mixture of vapor and carrier gas containing no unvaporized material is provided. The mixture of vapor and carrier gas are remixed to achieve a uniform vapor/carrier gas composition, which is directed toward a surface of a substrate, such as a glass substrate, where the vapor is deposited as a uniform film.09-29-2011
20110232569SEGMENTED SUBSTRATE LOADING FOR MULTIPLE SUBSTRATE PROCESSING - Embodiments of the present invention provide apparatus and methods for loading and unloading a multiple-substrate processing chamber segment by segment. One embodiment of the present invention provides an apparatus for processing multiple substrates. The apparatus includes a substrate supporting tray having a plurality of substrate pockets forming a plurality of segments, and a substrate handling assembly configured to pick up and drop off substrates from and to a segment of substrate pockets of the substrate supporting tray.09-29-2011
20110303148FULL-ENCLOSURE, CONTROLLED-FLOW MINI-ENVIRONMENT FOR THIN FILM CHAMBERS - An enclosure for generating a secondary environment within a processing chamber for coating a substrate. An enclosure wall forms a secondary environment encompassing the coating source, plasma, and the substrate, and separating them from interior of the processing chamber. The enclosure wall includes a plurality of pumping channels for diverting gaseous flow away from the substrate. The channels have an intake of larger diameter from the exhaust opening and are oriented at an angle with the intake opening pointing away from the deposition source. A movable seal enables transport of the substrate in open position and processing the substrate in closed position. The seal may be formed as a labyrinth seal to avoid particle generation from a standard contact seal.12-15-2011
20080216743CHEMICAL PRECURSOR AMPOULE FOR VAPOR DEPOSITION PROCESSES - Embodiments of the invention provide chemical precursor ampoules that may be used during vapor deposition processes. In one embodiment, an apparatus for generating a chemical precursor gas used in a vapor deposition processing system is provided which includes a canister having a sidewall, a top, and a bottom forming an interior volume and a solid precursor material at least partially contained within a lower region of the interior volume. The apparatus further contains an inlet port and an outlet port in fluid communication with the interior volume and an inlet tube connected to the inlet port and positioned to direct a carrier gas towards the sidewall and away form the outlet port. In one example, the solid precursor contains pentakis(dimethylamido) tantalum (PDMAT). In another example, the apparatus contains a plurality of baffles that form an extended mean flow path between the inlet port and the outlet port.09-11-2008
20130174781GALLIUM NITRIDE-BASED LED FABRICATION WITH PVD-FORMED ALUMINUM NITRIDE BUFFER LAYER - Fabrication of gallium nitride-based light emitting diodes (LEDs) with physical vapor deposition (PVD) formed aluminum nitride buffer layers is described.07-11-2013
20130092085LINEAR ATOMIC LAYER DEPOSITION APPARATUS - Embodiments relate to a linear deposition apparatus with mechanism for securing a shadow mask and a substrate onto a susceptor. The linear deposition apparatus includes a set of members attached to latches that are raised to unlock the shadow mask and the substrate from the susceptor. The latches are lowered to secure the shadow mask and the substrate to the susceptor. Another set of members are provided in the linear deposition apparatus to move and align the shadow mask with the substrate. The linear deposition apparatus also includes a main body and two wings provided at both sides of the main body to receive the substrate as the substrate moves linearly to expose the substrate to materials or radicals injected by reactors.04-18-2013
20130125815PLASMA ENHANCED ATOMIC LAYER DEPOSITION SYSTEM - A plasma enhanced atomic layer deposition (PEALD) system used to form thin films on substrates includes a plasma chamber, a processing chamber, two or more ring units and a control piece. The plasma chamber includes an outer and an inner quartz tubular units, whose central axes are aligned with each other. Therefore, plasma is held and concentrated in a cylindrical space formed between the outer and outer quartz tubular units. Due to the first and second through holes, the plasma flow may be more evenly distributed on most of the surface of the substrate to form evenly distributed thin films and nano particles on the substrate. In addition, due to the alignment and misalignment between the first and second through holes, the plasma generated in the plasma chamber may be swiftly allowed or disallowed to enter to the processing chamber to prevent the precursor from forming a CVD.05-23-2013
20080210164Heat treatment apparatus and heat treatment method - An object is to provide a method of activating impurity elements added to a semiconductor film, and a method of gettering, in a process of manufacturing a semiconductor device using a substrate having a low resistance to heat, such as glass, without changing the shape of the substrate, by using a short time heat treatment process. Another object is to provide a heat treatment apparatus that makes this type of heat treatment process possible. A unit for supplying a gas from the upstream side of a reaction chamber, a unit for heating the gas in the upstream side of the reaction chamber, a unit for holding a substrate to be processed in the downstream side of the reaction chamber, and a unit for circulating the gas from the downstream side of the reaction chamber to the upstream side are prepared. The amount of electric power used in heating the gas can be economized by circulating the gas used to heat the substrate to be processed. A portion of the circulating gas may be expelled, and can be utilized as a heat source in order to preheat a newly introduced gas.09-04-2008
20110214611FILM DEPOSITION APPARATUS - A film deposition apparatus is provided with a gas nozzle in which ejection holes that eject a reaction gas are formed along a longitudinal direction of the gas nozzle, and a flow regulation member that protrudes from the gas nozzle in either one of upstream and downstream directions of a rotation direction of a turntable. In such a configuration, a separation gas flowing from an upstream side of the rotation direction to the gas nozzle is restricted from flowing between the gas nozzle and the turntable on which a substrate is placed, and the reaction gas flowing upward from the turntable is restricted by the separation gas, thereby impeding a reaction gas concentration in a process area from being lowered.09-08-2011
20080202419Gas manifold directly attached to substrate processing chamber - A substrate processing apparatus is described. The apparatus includes a process chamber. A gas manifold is directly connected to an outer surface of the process chamber. The gas manifold may provide one or more gases to the process chamber.08-28-2008
20110209663Multi-Region Processing System and Heads - The various embodiments of the invention provide for relative movement of the substrate and a process head to access the entire wafer in a minimal space to conduct combinatorial processing on various regions of the substrate. The heads enable site isolated processing within the chamber described and method of using the same are described.09-01-2011
20110220025METAL ORGANIC CHEMICAL VAPOR DEPOSITION APPARATUS HAVING SATELLITE N-TYPE AND P-TYPE DOPING CHAMBERS - The present invention is related to a metal organic chemical vapor deposition apparatus, which is equipped with multiple numbers of n-type doping satellite chambers and a p-type doping satellite chamber in addition to a main growth chamber, and methods for minimizing the contamination of the epitaxial layers by residual doping reactants and maximizing the productivity of wafers. The separate n-type doping, p-type doping, and main growth chambers minimize the contamination of the growing epitaxial layer by the reactants used for doping the layer in the previous growth steps and deposited inside of the chamber. The multiple n-type doping satellite chambers make it possible to schedule the start of growth in each chamber in a way that the growth finishes at a regular time interval so that the wafers can be transferred to the main chamber at a regular time interval. They also make it possible to allocate one of the chambers for chamber cleaning and maintenance while the other chambers are in operation so that the growth process is not interrupted. The present invention can most efficiently be utilized for the growth of epitaxial wafers for GaN-based light emitting diodes.09-15-2011
20100313811EVAPORATION SOURCE AND FILM-FORMING DEVICE - A vaporization source (12-16-2010
20130180452FILM DEPOSITION APPARATUS - A film deposition apparatus deposits a thin film on a substrate by repeating a cycle of supplying plural kinds of process gases that react with each other in a vacuum chamber. The film deposition apparatus includes a turntable to hold a substrate thereon and to rotate the substrate, and a plurality of process gas supplying parts. At least one of the process gas supplying parts extends from the center to the periphery and is formed as a gas nozzle including gas discharge holes.07-18-2013
20110303149TWIN-TYPE COATING DEVICE WITH IMPROVED SEPARATING PLATE - The present invention refers to a coating device for coating of substrates comprising at least two process chambers (12-15-2011
20110303151TWIN-TYPE COATING DEVICE WITH IMPROVED SEPARATING PLATE - The present invention refers to a coating device for coating of substrates comprising at least two process chambers (12-15-2011
20110303150TWIN-TYPE COATING DEVICE WITH IMPROVED SEPARATING PLATE - The present invention refers to a coating device for coating of substrates comprising at least two process chambers (12-15-2011
20110308458Thin Film Deposition Apparatus - Provided is a thin film deposition apparatus. The thin film deposition apparatus includes a substrate support unit configured to support a substrate; and a shower head disposed above the substrate support unit to supply a process gas to the substrate. The shower head includes: an upper plate including a plurality of gas channels forming process gas flow paths and gas injection holes formed in the gas channels, high-frequency power being applied to the upper plate to excite the process gas into plasma; a baffle plate disposed under the upper plate and including a plurality of holes to uniformly distribute the process gas; and an injection plate disposed under the baffle plate to inject the process gas supplied through the baffle plate to a substrate.12-22-2011
20110308457APPARATUS AND METHOD FOR TREATING AN OBJECT - The invention relates to an apparatus for treating an object using a plasma process. The apparatus comprises a plasma reactor including a metal cylinder covered by a dielectric layer. Further, the apparatus comprises an electrode structure arranged radially outside the metal cylinder for generating the plasma process. The apparatus also comprises a supporting structure for locating the object to be treated at a pre-defined distance from the plasma reactor.12-22-2011
20110308456COATING APPARATUS - A coating apparatus for coating a number of workpieces includes a deposition chamber, a reaction assembly, and a driving assembly. The deposition chamber includes a housing defining a cavity. The reaction assembly is received in the deposition chamber and includes an outer barrel, an inner barrel, a number of nozzles, and a number of pipes. The housing and the outer barrel define a reaction chamber therebetween. The outer barrel includes a main body and two protruding portions extending from the main body. The workpieces are positioned on the protruding portions. The main body and the inner barrel define a first room therebetween. The inner barrel defines a second room. The pipes communicate the second room with the reaction chamber. The nozzles communicate the first room with the reaction chamber. The driving assembly is connected to the reaction assembly and configured for rotating the reaction assembly in the cavity.12-22-2011
20090165713CHEMICAL VAPOR DEPOSITION APPARATUS - Provided is a chemical vapor deposition apparatus. The apparatus includes a reaction chamber, a gas introduction unit, and a gas exhaust unit. The reaction chamber includes a susceptor on which a wafer is loaded and a reaction furnace in which the wafer is processed by chemical vapor deposition. The gas introduction unit is disposed at an outer wall of the reaction chamber to supply reaction gas from an outside of the reaction furnace to a center portion of the reaction furnace. The gas exhaust unit is disposed at a center portion of the reaction chamber to discharge the reaction gas to an upper or lower outside of the reaction chamber after the reaction gas is used for a reaction in the reaction furnace. Therefore, the gas density inside the chamber can be kept at a substantially uniform state even when process pressure is increased for growing a high-temperature deposition layer.07-02-2009
20120017831CHEMICAL VAPOR DEPOSITION METHOD AND SYSTEM FOR SEMICONDUCTOR DEVICES - A method of and system for chemical vapor deposition of layers of material on substrates for producing semiconductor devices provides for continuous in-line processing. The method includes continuously conveying a plurality of substrates through a plurality of in-line deposition regions, continuously providing and distributing a chemical vapor at each region to deposit material for the layers, and continuously supplying a flow of chemical material for each region to provide the chemical vapor. The system includes a continuous in-line substrate conveyance apparatus for moving a plurality of substrates through a plurality of deposition regions, a deposition head for providing and distributing a chemical vapor at each of the regions to deposit material for the layers, and a chemical material supply apparatus for providing a flow of chemical materials to each of the heads for the chemical vapor.01-26-2012
20130192524Continuous Substrate Processing System - A processing chamber having a plurality of movable substrate carriers stacked therein for continuously processing a plurality of substrates is provided. The movable substrate carrier is capable of being transported from outside of the processing chamber, e.g., being transferred from a load luck chamber, into the processing chamber and out of the processing chamber, e.g., being transferred into another load luck chamber. Process gases delivered into the processing chamber are spatially separated into a plurality of processing slots, and/or temporally controlled. The processing chamber can be part of a multi-chamber substrate processing system.08-01-2013
20130206067FILM DEPOSITION APPARATUS - A film deposition apparatus includes a first plasma processing unit which performs a plasma process to a substrate at a second process area wherein the first plasma processing unit includes a first surrounding portion for forming a plasma generation space where plasma is generated, provided with a discharge port at a lower end portion, a second process gas supplying unit which supplies a second process gas to a plasma generation space, an activating unit which activates the second process gas in the plasma generation space, and a second surrounding portion provided below the first surrounding portion for forming a guide space which extends from a center portion side to an outer periphery portion side of the turntable so that the plasma discharged from the discharge port is guided to the surface of the turntable.08-15-2013

Patent applications in class Multizone chamber